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Sample records for self-annealed copper films

  1. Quantitative microstructure characterization of self-annealed copper films with electron backscatter diffraction

    DEFF Research Database (Denmark)

    Pantleon, Karen; Gholinia, A.; Somers, Marcel A. J.

    2008-01-01

    Electron backscatter diffraction (EBSD) was applied to analyze cross sections of self-annealed copper electrodeposits, for which earlier the kinetics of self-annealing had been investigated by in-situ X-ray diffraction (XRD). The EBSD investigations on the grain size, grain boundary character...... and crystallographic texture of copper films with different thicknesses essentially supplement results from in-situ XRD. Twin relations between neighboring grains were identified from the orientation maps and the observed twin chains confirm multiple twinning in copper electrodeposits as the mechanism...

  2. X-ray diffraction investigation of self-annealing in nanocrystalline copper electrodeposits

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2006-01-01

    X-ray diffraction analysis and electrical resistivity measurements were conducted simultaneously for in-situ examination of self-annealing in copper electrodeposits. Considerable growth of the as-deposited nano-sized crystallites occurs with time and the crystallographic texture changes by multip...... twinning during self-annealing. The kinetics of self-annealing depends on the layer thickness as well as on the orientation and/or the size of the as-deposited crystallites. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.......X-ray diffraction analysis and electrical resistivity measurements were conducted simultaneously for in-situ examination of self-annealing in copper electrodeposits. Considerable growth of the as-deposited nano-sized crystallites occurs with time and the crystallographic texture changes by multiple...

  3. Evolution of the microstructure in electrochemically deposited copper films at room temperature

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2007-01-01

    The room temperature evolution of the microstructure in copper electrodeposits (self-annealing) was investigated by means of X-ray diffraction analysis and simultaneous measurement of the electrical resistivity as a function of time with an unprecedented time resolution. Independent of the copper...... the crystallographic texture changes by a multiple twinning mechanism. The kinetics of self-annealing is strongly affected by the thickness of the deposit. Storage of the copper films at sub-zero temperatures effectively hinders self-annealing and does not affect the kinetics of self-annealing upon reheating to room...... temperature....

  4. Surface films and corrosion of copper

    International Nuclear Information System (INIS)

    Hilden, J.; Laitinen, T.; Maekelae, K.; Saario, T.; Bojinov, M.

    1999-03-01

    In Sweden and Finland the spent nuclear fuel is planned to be encapsulated in cast iron canisters that have an outer shield made of copper. The copper shield is responsible for the corrosion protection of the canister construction. General corrosion of the copper is not expected to be the limiting factor in the waste repository environment when estimating the life-time of the canister construction. However, different forms of localised corrosion, i.e. pitting, stress corrosion cracking, or environmentally assisted creep fracture may cause premature failure of the copper shield. Of the probable constituents in the groundwater, nitrites, chlorides, sulphides and carbonates have been suggested to promote localised corrosion of copper. The main assumption made in planning this research program is that the surface films forming on copper in the repository environment largely determine the susceptibility of copper to the different forms of localised corrosion. The availability of reactants, which also may become corrosion rate limiting, is investigated in several other research programs. This research program consists of a set of successive projects targeted at characterising the properties of surface films on copper in repository environment containing different detrimental anions. A further aim was to assess the significance of the anion-induced changes in the stability of the oxide films with regard to localised corrosion of copper. This report summarises the results from a series of investigations on properties of surface films forming on copper in water of pH = 8.9 at temperature of 80 deg C and pressure of 2 MPa. The main results gained so far in this research program are as follows: The surface films forming on copper in the thermodynamic stability region of monovalent copper at 80 deg C consist of a bulk part (about 1 mm thick) which is a good ionic and electronic conductor, and an outer, interfacial layer (0.001 - 0.005 mm thick) which shows p-type semiconductor

  5. Yield strength of attached copper film

    International Nuclear Information System (INIS)

    Zhang Yan; Zhang Jian-Min

    2011-01-01

    Variation of stress in attached copper film with an applied strain is measured by X-ray diffraction combined with a four-point bending method. A lower slope of the initial elastic segment of the curve of X-ray measured stress versus applied strain results from incomplete elastic strain transferred from the substrate to the film due to insufficiently strong interface cohesion. So the slope of the initial elastic segment of the X-ray stress (or X-ray strain directly) of the film against the substrate applied strain may be used to measure the film-substrate cohesive strength. The yield strength of the attached copper film is much higher than that of the bulk material and varies linearly with the inverse of the film thickness. (condensed matter: structural, mechanical, and thermal properties)

  6. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Science.gov (United States)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  7. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Prins, Johan F.

    2001-01-01

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  8. Encapsulation of electroless copper patterns into diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Pimenov, S.M.; Shafeev, G.A.; Lavrischev, S.V. [General Physics Institute, Moscow (Russian Federation)] [and others

    1995-12-31

    The results are reported on encapsulating copper lines into diamond films grown by a DC plasma CVD. The process includes the steps of (i) laser activation of diamond for electroless metal plating, (ii) electroless copper deposition selectively onto the activated surface regions, and (iii) diamond regrowth on the Cu-patterned diamond films. The composition and electrical properties of the encapsulated copper lines were examined, revealing high purity and low electrical resistivity of the encapsulated electroless copper.

  9. Transpassive Dissolution of Copper and Rapid Formation of Brilliant Colored Copper Oxide Films

    Science.gov (United States)

    Fredj, Narjes; Burleigh, T. David; New Mexico Tech Team

    2014-03-01

    This investigation describes an electrochemical technique for growing adhesive copper oxide films on copper with attractive colors ranging from gold-brown to pearl with intermediate colors from red violet to gold green. The technique consists of anodically dissolving copper at transpassive potentials in hot sodium hydroxide, and then depositing brilliant color films of Cu2O onto the surface of copper after the anodic potential has been turned off. The color of the copper oxide film depends on the temperature, the anodic potential, the time t1 of polarization, and the time t2, which is the time of immersion after potential has been turned off. The brilliant colored films were characterized using glancing angle x-ray diffraction, and the film was found to be primarily Cu2O. Cyclic voltammetry, chronopotentiometry, scanning electron microscopy, and x-ray photoelectron spectroscopy were also used to characterize these films.

  10. Tension Tests of Copper Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kyung Jo; Kim, Chung Youb [Chonnam Nat’l Univ., Gwangju (Korea, Republic of)

    2017-08-15

    Tension tests for copper thin films with thickness of 12 μm were performed by using a digital image correlation method based on consecutive digital images. When calculating deformation using digital image correlation, a large deformation causes errors in the calculated result. In this study, the calculation procedure was improved to reduce the error, so that the full field deformation and the strain of the specimen could be accurately and directly measured on its surface. From the calculated result, it can be seen that the strain distribution is not uniform and its variation is severe, unlike the distribution in a common bulk specimen. This might result from the surface roughness introduced in the films during the fabrication process by electro-deposition.

  11. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  12. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  13. Thermodynamic investigation of the MOCVD of copper films from bis ...

    Indian Academy of Sciences (India)

    Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material.

  14. Organization of copper nanoclusters in Langmuir–Blodgett films

    Indian Academy of Sciences (India)

    Stable nanoclusters of Cu were synthesized using Langmuir–Blodgett films of octadecylsuccinic acid (ODSA) as template. The Langmuir–Blodgett films of ODSA formed from subphase containing copper ions were first subjected to sulphidation (S) using sodium sulphide and then hydrogenated (H) using hydrogen gas.

  15. Photoelectrochemistry of copper(I) acetylide films electrodeposited onto copper electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zotti, G.; Cattarin, S.; Mengoli, G.; Fleischmann, M.; Peter, L.M.

    1986-01-01

    Films of copper acetylide (Cu/sub 2/C/sub 2/) were grown electrochemically on copper and characterized by transmittance and reflectance techniques. The photoelectrochemical properties of the filmed electrodes in alkaline solution indicate that Cu/sub 2/C/sub 2/ behaves as a p-type semiconducting material (1.5 eV band gap). The photocurrents depend on film thickness and aging and high resistivity or recombination losses limit the quantum yield to some 4% for thicknesses of practical importance (250 nm).

  16. Investigation of interdiffusion in copper-nickel bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abdul-Lettif, Ahmed M. [Physics Department, College of Science, Babylon University, Hilla (Iraq)]. E-mail: abdullettif@yahoo.com

    2007-01-15

    Auger depth profiling technique and X-ray diffraction analysis have been employed to study the interdiffusion in vacuum-deposited copper-nickel bilayer thin films. An adaptation of the Whipple model was used to determine the diffusion coefficients of both nickel in copper and copper in nickel. The calculated diffusion coefficient is (2.0x10{sup -7} cm{sup 2}/s)exp(-1.0 eV/kT) for nickel in copper, and (6x10{sup -8} cm{sup 2}/s)exp(-0.98 eV/kT) for copper in nickel. The difference between the diffusion parameters obtained in the present work and those extracted by other investigators is attributed essentially to the difference in the films microstructure and to the annealing ambient. It is concluded that interdiffusion in the investigated films is described by type-B kinetics in which rapid grain-boundary diffusion is coupled to defect-enhanced diffusion into the grain interior. The present data raise a question about the effectiveness of nickel as a diffusion barrier between copper and the silicon substrate.

  17. Passivation Effects in Copper Thin Films

    International Nuclear Information System (INIS)

    Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

    2006-01-01

    We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 μm thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 μm film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 μm film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films

  18. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  19. Nanocarbon-copper thin film as transparent electrode

    International Nuclear Information System (INIS)

    Isaacs, R. A.; Zhu, H.; Preston, Colin; LeMieux, M.; Jaim, H. M. Iftekhar; Hu, L.; Salamanca-Riba, L. G.; Mansour, A.; Zavalij, P. Y.; Rabin, O.

    2015-01-01

    Researchers seeking to enhance the properties of metals have long pursued incorporating carbon in the metallic host lattice in order to combine the strongly bonded electrons in the metal lattice that yield high ampacity and the free electrons available in carbon nanostructures that give rise to high conductivity. The incorporation of carbon nanostructures into the copper lattice has the potential to improve the current density of copper to meet the ever-increasing demands of nanoelectronic devices. We report on the structure and properties of carbon incorporated in concentrations up to 5 wt. % (∼22 at. %) into the crystal structure of copper. Carbon nanoparticles of 5 nm–200 nm in diameter in an interconnecting carbon matrix are formed within the bulk Cu samples. The carbon does not phase separate after subsequent melting and re-solidification despite the absence of a predicted solid solution at such concentrations in the C-Cu binary phase diagram. This material, so-called, Cu covetic, makes deposition of Cu films containing carbon with similar microstructure to the metal possible. Copper covetic films exhibit greater transparency, higher conductivity, and resistance to oxidation than pure copper films of the same thickness, making them a suitable choice for transparent conductors

  20. Nanocarbon-copper thin film as transparent electrode

    Energy Technology Data Exchange (ETDEWEB)

    Isaacs, R. A.; Zhu, H.; Preston, Colin; LeMieux, M.; Jaim, H. M. Iftekhar; Hu, L., E-mail: binghu@umd.edu; Salamanca-Riba, L. G., E-mail: riba@umd.edu [Materials Science and Engineering Department, University of Maryland, College Park, Maryland 20742 (United States); Mansour, A. [Carderock Division, Naval Surface Warfare Center, West Bethesda, Maryland 20817 (United States); Zavalij, P. Y. [Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742 (United States); Rabin, O. [Materials Science and Engineering Department, University of Maryland, College Park, Maryland 20742 (United States); Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States)

    2015-05-11

    Researchers seeking to enhance the properties of metals have long pursued incorporating carbon in the metallic host lattice in order to combine the strongly bonded electrons in the metal lattice that yield high ampacity and the free electrons available in carbon nanostructures that give rise to high conductivity. The incorporation of carbon nanostructures into the copper lattice has the potential to improve the current density of copper to meet the ever-increasing demands of nanoelectronic devices. We report on the structure and properties of carbon incorporated in concentrations up to 5 wt. % (∼22 at. %) into the crystal structure of copper. Carbon nanoparticles of 5 nm–200 nm in diameter in an interconnecting carbon matrix are formed within the bulk Cu samples. The carbon does not phase separate after subsequent melting and re-solidification despite the absence of a predicted solid solution at such concentrations in the C-Cu binary phase diagram. This material, so-called, Cu covetic, makes deposition of Cu films containing carbon with similar microstructure to the metal possible. Copper covetic films exhibit greater transparency, higher conductivity, and resistance to oxidation than pure copper films of the same thickness, making them a suitable choice for transparent conductors.

  1. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  2. Method for fabrication of ceramic dielectric films on copper foils

    Science.gov (United States)

    Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

    2015-03-10

    The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.

  3. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  4. Photoconductivity in reactively evaporated copper indium selenide thin films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-01

    Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

  5. Substrate considerations for graphene synthesis on thin copper films

    International Nuclear Information System (INIS)

    Howsare, Casey A; Robinson, Joshua A; Weng Xiaojun; Bojan, Vince; Snyder, David

    2012-01-01

    Chemical vapor deposition on copper substrates is a primary technique for synthesis of high quality graphene films over large areas. While well-developed processes are in place for catalytic growth of graphene on bulk copper substrates, chemical vapor deposition of graphene on thin films could provide a means for simplified device processing through the elimination of the layer transfer process. Recently, it was demonstrated that transfer-free growth and processing is possible on SiO 2 . However, the Cu/SiO 2 /Si material system must be stable at high temperatures for high quality transfer-free graphene. This study identifies the presence of interdiffusion at the Cu/SiO 2 interface and investigates the influence of metal (Ni, Cr, W) and insulating (Si 3 N 4 , Al 2 O 3 , HfO 2 ) diffusion barrier layers on Cu–SiO 2 interdiffusion, as well as graphene structural quality. Regardless of barrier choice, we find the presence of Cu diffusion into the silicon substrate as well as the presence of Cu–Si–O domains on the surface of the copper film. As a result, we investigate the choice of a sapphire substrate and present evidence that it is a robust substrate for synthesis and processing of high quality, transfer-free graphene. (paper)

  6. Copper thin film for RFID UHF antenna on flexible substrate

    International Nuclear Information System (INIS)

    Tran, Nhan Ai; Tran, Huy Nam; Dang, Mau Chien; Fribourg-Blanc, Eric

    2010-01-01

    A process flow using photolithography and sputtering was studied for copper antenna fabrication on thin poly(ethylene terephthalate) (PET) substrate. The lift-off route was chosen for its flexibility at laboratory scale. It was clarified that the cleaning of PET is an important step that necessitates mild oxygen plasma etching. Then copper is sputter deposited after photolithographic definition of the antenna. Care is necessary since PET, as a very flexible substrate, is temperature sensitive. The temperature increase generated by the impact of deposited copper should be maintained below the glass transition temperature of the polymer to avoid detrimental deformation. dc power of 40 to 50 W was found to be the maximum possible sputtering power for commercial PET. It was found that the resistivity of the thin film is below two times the bulk resistivity of copper for a deposition pressure below 4×10 −3  mbar and thickness above 450 nm. These results enable the reliable fabrication of copper RFID UHF antennae on a PET substrate for further testing of new tag designs. The present paper summarizes the effort to test new designs of antennae for RadioFrequency IDentification (RFID) Ultra High Frequency (UHF) tags, for use in various applications (e.g. object tracking and environment monitoring) in Vietnam

  7. The strength limits of ultra-thin copper films

    Energy Technology Data Exchange (ETDEWEB)

    Wiederhirn, Guillaume

    2007-07-02

    Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

  8. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  9. Comparative Study of Electroless Copper Film on Different Self-Assembled Monolayers Modified ABS Substrate

    Directory of Open Access Journals (Sweden)

    Jiushuai Xu

    2014-04-01

    Full Text Available Copper films were grown on (3-Mercaptopropyltrimethoxysilane (MPTMS, (3-Aminopropyltriethoxysilane (APTES and 6-(3-(triethoxysilylpropylamino-1,3,5- triazine-2,4-dithiol monosodium (TES self-assembled monolayers (SAMs modified acrylonitrile-butadiene-styrene (ABS substrate via electroless copper plating. The copper films were examined using scanning electron microscopy (SEM and X-ray diffraction (XRD. Their individual deposition rate and contact angle were also investigated to compare the properties of SAMs and electroless copper films. The results indicated that the formation of copper nuclei on the TES-SAMs modified ABS substrate was faster than those on the MPTMS-SAMs and APTES-SAMs modified ABS substrate. SEM images revealed that the copper film on TES-SAM modified ABS substrate was smooth and uniform, and the density of copper nuclei was much higher. Compared with that of TES-SAMs modified resin, the coverage of copper nuclei on MPTMS and APTES modified ABS substrate was very limited and the copper particle size was too big. The adhesion property test demonstrated that all the SAMs enhanced the interfacial interaction between copper plating and ABS substrate. XRD analysis showed that the copper film deposited on SAM-modified ABS substrate had a structure with Cu(111 preferred orientation, and the copper film deposited on TES-SAMs modified ABS substrate is better than that deposited on MPTMS-SAMs or APTES-SAMs modified ABS resins in electromigrtion resistance.

  10. Bath parameter dependence of chemically deposited Copper Selenide thin film

    International Nuclear Information System (INIS)

    Al-Mamun; Islam, A.B.M.O.

    2004-09-01

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu 2-x Se thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu 2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se. (author)

  11. Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

    Science.gov (United States)

    Wang, C. P.; Dai, T.; Lu, Y.; Shi, Z.; Ruan, J. J.; Guo, Y. H.; Liu, X. J.

    2017-08-01

    Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (˜5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

  12. Influence of titanium oxide films on copper nucleation during electrodeposition

    International Nuclear Information System (INIS)

    Chang, Hyun K.; Choe, Byung-Hak; Lee, Jong K.

    2005-01-01

    Copper electrodeposition has an important industrial role because of various interconnects used in electronic devices such as printed wire boards. With an increasing trend in device miniaturization, in demand are void-free, thin copper foils of 10 μm thick or less with a very low surface profile. In accordance, nucleation kinetics of copper was studied with titanium cathodes that were covered with thin, passive oxide films of 2-3 nm. Such an insulating oxide layer with a band gap of 3 eV is supposed to nearly block charge transfer from the cathode to the electrolyte. However, significant nucleation rates of copper were observed. Pipe tunneling mechanism along a dislocation core is reasoned to account for the high nucleation kinetics. A dislocation core is proposed to be a high electron tunneling path with a reduced energy barrier and a reduced barrier thickness. In supporting the pipe tunneling mechanism, both 'in situ' and 'ex situ' scratch tests were performed to introduce extra dislocations into the cathode surface, that is, more high charge paths via tunneling, before electrodeposition

  13. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2010-01-01

    and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

  14. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

    International Nuclear Information System (INIS)

    Pantleon, Karen; Somers, Marcel A.J.

    2010-01-01

    Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

  15. Fabricated super-hydrophobic film with potentiostatic electrolysis method on copper for corrosion protection

    International Nuclear Information System (INIS)

    Wang Peng; Qiu Ri; Zhang Dun; Lin Zhifeng; Hou Baorong

    2010-01-01

    A novel one-step potentiostatic electrolysis method was proposed to fabricate super-hydrophobic film on copper surface. The resulted film was characterized by contact angle tests, Fourier transform infrared spectra (FT-IR), X-ray photoelectron spectroscopy (XPS), Field emission scanning electron microscopy (FE-SEM) and electrochemical measurements. It could be inferred that the super-hydrophobic property resulted from the flower-like structure of copper tetradecanoate film. In the presence of super-hydrophobic film, the anodic and cathodic polarization current densities are reduced for more than five and four orders of magnitude, respectively. The air trapped in the film is the essential contributor of the anticorrosion property of film for its insulation, the copper tetradecanoate film itself acts as a 'frame' to trap air as well as a coating with inhibition effect. The super-hydrophobic film presents excellent inhibition effect to the copper corrosion and stability in water containing Cl - .

  16. New barrierless copper-alloy film for future applications

    Science.gov (United States)

    Lin, Chon-Hsin Lin

    2015-09-01

    Since Cu metallization results in a conductivity and an electromigration resistance greater than those of Al, it has become popular for making Si-based interconnects for numerous devices in the field of microelectronics. Following the current trend of miniaturization required for most electronic components, there is a greater need for further size reduction in Si-based devices. The most critical side effect of size reduction is the increase in electronic scattering and resistivity when the barrier-layer thickness is further reduced. To explore advanced Cu-metallization methods and to develop a more economical manufacturing process for Cu-alloy films, the development of Cu materials having better quality and higher thermal stability becomes imperative for the metallization and annealing processes. For this purpose, we first fabricated Cu(GeNx) films and examined their thermal stability and electrical reliability after either cyclic or isothermal annealing. The excellent thermal and electrical properties make these new Cu-alloy films highly promising for applications that require more reliable and inexpensive copper interconnects. In this study, we fabricated Cu alloy films by doping a minute amount of Ge or GeNx, respectively, into the Cu films via barrierless Cu metallization, an inexpensive manufacturing method. Using these newly fabricated alloy films, we were able to eliminate or at least substantially reduce the detrimental interaction between the alloy and the barrierless Si substrate. The Cu(GeNx) films also exhibited high thermal stability, low resistivity and leakage current, and long time-dependent dielectric breakdown (TDDB) lifetimes, making such novel films a candidate for high-quality, economical, and more reliable Cu interconnects.

  17. In-situ x-ray absorption study of copper films in ground water solutions

    International Nuclear Information System (INIS)

    Kvashnina, K.O.; Butorin, S.M.; Modin, A.; Soroka, I.; Marcellini, M.; Nordgren, J.; Guo, J.-H.; Werme, L.

    2007-01-01

    This study illustrates how the damage from copper corrosion can be reduced by modifying the chemistry of the copper surface environment. The surface modification of oxidized copper films induced by chemical reaction with Cl - and HCO 3 - in aqueous solutions was monitored by in situ X-ray absorption spectroscopy. The results show that corrosion of copper can be significantly reduced by adding even a small amount of sodium bicarbonate. The studied copper films corroded quickly in chloride solutions, whereas the same solution containing 1.1 mM HCO 3 - prevented or slowed down the corrosion processes

  18. Effect of deposition rate on melting point of copper film catalyst substrate at atomic scale

    Science.gov (United States)

    Marimpul, Rinaldo; Syuhada, Ibnu; Rosikhin, Ahmad; Winata, Toto

    2018-03-01

    Annealing process of copper film catalyst substrate was studied by molcular dynamics simulation. This copper film catalyst substrate was produced using thermal evaporation method. The annealing process was limited in nanosecond order to observe the mechanism at atomic scale. We found that deposition rate parameter affected the melting point of catalyst substrate. The change of crystalline structure of copper atoms was observed before it had been already at melting point. The optimum annealing temperature was obtained to get the highest percentage of fcc structure on copper film catalyst substrate.

  19. Improving hemocompatibility and accelerating endothelialization of vascular stents by a copper-titanium film

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hengquan, E-mail: 99xyxy@163.com [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Pan, Changjiang [Jiangsu Provincial Key Laboratory for Interventional Medical Devices, Huaiyin Institute of Technology, Huaiyin 223033 (China); Zhou, Shijie; Li, Junfeng [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Huang, Nan [Key Laboratory for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, Chengdu 610031 (China); Dong, Lihua [Department of Research & Development, Lifetech Scientific (Shenzhen) Co., Ltd, Shenzhen 518057 (China)

    2016-12-01

    Bio-inorganic films and drug-eluting coatings are usually used to improve the hemocompatibility and inhibit restenosis of vascular stent; however, above bio-performances couldn't combine together with single materials. In the present study, we reported a simple approach to fabricate a metal film with the aim of imparting the stent with good blood compatibility and accelerating endothelialization. The films with various ratios of Cu and Ti were prepared through the physical vapor deposition. Phase structure and element composition were investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The releasing volume of copper ion in Cu/Ti film was determined by immersing test. The hemolysis ratio, platelet adhesion and clotting time were applied to evaluate the hemocompatibility. The proliferative behaviors of endothelial cells and smooth muscle cells under certain copper concentration were investigated in vitro and in vivo. Results indicated that copper-titanium films exhibited good hemocompatibility in vitro; however, the increase of Cu/Ti ratio could lead to increasing hemolysis ratio. Endothelial cells displayed more proliferative than smooth muscle cells when the copper concentration was < 7.5 μg/ml, however both cells tended to apoptosis to some degree when the copper concentration was increased. The complete endothelialization of the film with low copper in vivo was observed at the 2nd week, indicating that the copper-titanium film with the lower copper concentration could promote endothelialization. Therefore, the inorganic copper-titanium film could be potential biomaterials to improve blood compatibility and accelerating endothelialization of vascular stents. - Highlight: • The Cu/Ti film with regulating the various responses of ECs and SMCs has been prepared. • The hemocompatibility of Cu/Ti film is favorable and regulatable. • The volume of copper ion released from film could be designed.

  20. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  1. Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

    Science.gov (United States)

    Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

    2018-05-01

    Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

  2. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  3. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  4. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Mani Menaka, S., E-mail: manimenaka.phy@gmail.com [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Umadevi, G. [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Manickam, M. [SRMV College of Arts and Science, Coimbatore, 641020, Tamilnadu (India)

    2017-04-15

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T{sub s} = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  5. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Mani Menaka, S.; Umadevi, G.; Manickam, M.

    2017-01-01

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T_s = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  6. Fatigue crack closure in submicron-thick freestanding copper films

    International Nuclear Information System (INIS)

    Kondo, Toshiyuki; Ishii, Takaki; Hirakata, Hiroyuki; Minoshima, Kohji

    2015-01-01

    The fatigue crack closure in approximately 500-nm-thick freestanding copper films were investigated by in situ field emission scanning electron microscope (FESEM) observations of the fatigue crack opening/closing behavior at three stress ratios of R=0.1, 0.5, and 0.8 in the low–K max (maximum stress intensity factor) region of K max <4.5 MPam 1/2 . The direct observation of fatigue cracks clarified that crack closure occurred at R=0.1 and 0.5, while the fatigue crack was always open at R=0.8. Changes in the gage distance across the fatigue crack during a fatigue cycle were measured from the FESEM images, and the crack opening stress intensity factor K op was evaluated on the basis of the stress intensity factor K vs. the gage distance relationship. The effective stress intensity factor range ΔK eff =K max −K op was then evaluated. The R-dependence of the da/dN vs. ΔK eff relationship was smaller than that of the da/dN vs. ΔK relationship. This suggests that ΔK eff is a dominating parameter rather than ΔK in the fatigue crack propagation in the films. This paper is the first report on the presence of the fatigue crack closure in submicron-thick freestanding metallic films

  7. Dissociation of dilute immiscible copper alloy thin films

    International Nuclear Information System (INIS)

    Barmak, K.; Lucadamo, G. A.; Cabral, C. Jr.; Lavoie, C.; Harper, J. M. E.

    2000-01-01

    The dissociation behavior of dilute, immiscible Cu-alloy thin films is found to fall into three broad categories that correlate most closely with the form of the Cu-rich end of the binary alloy phase diagrams. Available thermodynamic and tracer diffusion data shed further light on alloy behavior. Eight alloying elements were selected for these studies, with five elements from groups 5 and 6, two from group 8, and one from group 11 of the periodic table. They are respectively V, Nb, Ta, Cr, Mo, Fe, Ru, and Ag. The progress of precipitation in approximately 500-nm-thick alloy films, containing 2.5-3.8 at. % solute, was followed with in situ resistance and stress measurements as well as with in situ synchrotron x-ray diffraction. In addition, texture analysis and transmission electron microscopy were used to investigate the evolution of microstructure and texture of Cu(Ta) and Cu(Ag). For all eight alloys, dissociation occurred upon heating, with the rejection of solute and evolution of microstructure often occurring in multiple steps that range over several hundred degrees between approximately 100 and 900 degree sign C. However, in most cases, substantial reductions in resistivity of the films took place below 400 degree sign C, at temperatures of interest to copper metallization schemes for silicon chip technology. (c) 2000 American Institute of Physics

  8. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  9. Study of fine films nature on the surface of copper band by photoelectron spectroscopy method

    International Nuclear Information System (INIS)

    Reznichenko, K.N.; Fedorov, V.N.; Shevakin, Yu.F.

    1983-01-01

    The composition of surface films formed on the copper band of industrial production under atmospheric conditions, its changes in thickness and determination of chemical state of the above films are studied. It has been found by the methods of X-ray photoelectronic and Auger-spectroscopy that defect formations on the surface of the copper band of industrial production represent copper oxides in the form of fine films, their change in colour from blue to dark blue probably is determined by different thickness of these defects. The said films on copper have practically identical chemical composition characterized by the presence of unequally valent copper, oxygen in various states (adsorbed and in the form of oxides), carbon and iron. By means of chemical shifts of the line Cu 2psub(3/2) and Ol s the presence in the external part of the film of CuO copper oxide is established and nearer to the interface surface film-metal-of Cu 2 O cuprous oxide which indicates a two-layer surface film structure. The presence of adsorbed carbon and iron in the film composition is a result of surface contamination

  10. Advances in copper-chalcopyrite thin films for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

    2010-01-15

    Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

  11. Thin films of copper antimony sulfide: A photovoltaic absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

    2015-01-15

    Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

  12. Effects of vacuum processing erbium dideuteride/ditritide films deposited on chromium underlays on copper substrates

    International Nuclear Information System (INIS)

    Provo, J.L.

    1978-01-01

    Thin films of erbium dideuteride/ditritide were experimentally produced on chromium underlays deposited on copper substrates. The chromium underlay is required to prevent erbium occluder/copper substrate alloying which inhibits hydriding. Data taken has shown that vacuum processing affects the erbium/chromium/copper interaction. With an in situ process in which underlay/occluder films are vacuum deposited onto copper substrates and hydrided with no air exposure between these steps, data indicates a minimum of 1500A of chromium is required for optimum hydriding. If films are vacuum deposited as above and air-exposed before hydriding, a minimum of 3000A of chromium was shown to be required for equivalent hydriding. Data suggests that the activation step (600 0 C for 1 hour) required for hydriding the film of the second type is responsible for the difference observed. Such underlay thickness parameters are important, with regard to heat transfer considerations in thin hydride targets used for neutron generation

  13. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S [Evergreen, CO; Leisch, Jennifer [Denver, CO; Taylor, Matthew [West Simsbury, CT; Stanbery, Billy J [Austin, TX

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  14. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    Science.gov (United States)

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  15. Laser-Induced, Local Oxidation of Copper Nanoparticle Films During Raman Measurements

    Science.gov (United States)

    Hight Walker, Angela R.; Cheng, Guangjun; Calizo, Irene

    2011-03-01

    The optical properties of gold and silver nanoparticles and their films have been thoroughly investigated as surface enhanced Raman scattering (SERS) substrates and chemical reaction promoters. Similar to gold and silver nanoparticles, copper nanoparticles exhibit distinct plasmon absorptions in the visible region. The work on copper nanoparticles and their films is limited due to their oxidization in air. However, their high reactivity actually provides an opportunity to exploit the laser-induced thermal effect and chemical reactions of these nanoparticles. Here, we present our investigation of the local oxidation of a copper nanoparticle film induced by a visible laser source during Raman spectroscopic measurements. The copper nanoparticle film is prepared by drop-casting chemically synthesized copper colloid onto silicon oxide/silicon substrate. The local oxidation induced by visible lasers in Raman spectroscopy is monitored with the distinct scattering peaks for copper oxides. Optical microscopy and scanning electron microscopy have been used to characterize the laser-induced morphological changes in the film. The results of this oxidation process with different excitation wavelengths and different laser powers will be presented.

  16. Electric and electrochemical properties of surface films formed on copper in the presence of bicarbonate anions

    International Nuclear Information System (INIS)

    Sirkiae, P.; Saario, T.; Maekelae, K.; Laitinen, T.; Bojinov, M.

    1999-01-01

    Copper is used as an outer shield of cast iron canisters planned for storage of spent nuclear fuel. The copper shield is responsible for the corrosion protection of the canister. The aim of the present work was to study the influence of bicarbonate (HCO 3 - ) anions on the stability of the copper oxide film. The work consists of a brief literature survey and an experimental part, in which voltammetry, electrochemical impedance spectroscopy and dc resistance measurements via the Contact Electric Resistance (CER) technique were used. The studies reported in the literature indicated that HCO 3 - ions increase the solubility of copper in the stability region of Cu(II). Thus they render the oxide film formed on copper susceptible to local damage and to localised corrosion at high potentials. Unfortunately, despite the great importance of bicarbonates in copper corrosion, most of the environments used in the electrochemical and corrosion studies are not comparable with repository conditions. In the existing studies either the bicarbonate concentrations or pH of the solutions were too high. In addition, no such studies were available, in which not only the effect of carbonate ions, but also possible synergetic effects of them with other aggressive ions would have been clarified. The voltammetric results of the experimental part of this work point to a bilayer structure of the anodic film on copper in neutral solutions containing HCO 3 - ions. The transport of ionic defects through a thin continuous p-type semiconductor layer was concluded to be the rate limiting step of the anodic oxidation of copper in the stability region of monovalent copper and in the mixed oxide (Cu(I)/Cu(II) oxide) region. Films formed in the divalent copper region did not show well-pronounced semiconductor behaviour. Substantial evidence was found in the voltammetric, CER and impedance results for the increased defectiveness of the anodic film in the Cu(II) region. The oxidation rate of copper in

  17. Electric and electrochemical properties of surface films formed on copper in the presence of bicarbonate anions

    Energy Technology Data Exchange (ETDEWEB)

    Sirkiae, P.; Saario, T.; Maekelae, K.; Laitinen, T.; Bojinov, M. [VTT Manufacturing Technology, Espoo (Finland)

    1999-11-01

    Copper is used as an outer shield of cast iron canisters planned for storage of spent nuclear fuel. The copper shield is responsible for the corrosion protection of the canister. The aim of the present work was to study the influence of bicarbonate (HCO{sub 3}{sup -}) anions on the stability of the copper oxide film. The work consists of a brief literature survey and an experimental part, in which voltammetry, electrochemical impedance spectroscopy and dc resistance measurements via the Contact Electric Resistance (CER) technique were used. The studies reported in the literature indicated that HCO{sub 3}{sup -} ions increase the solubility of copper in the stability region of Cu(II). Thus they render the oxide film formed on copper susceptible to local damage and to localised corrosion at high potentials. Unfortunately, despite the great importance of bicarbonates in copper corrosion, most of the environments used in the electrochemical and corrosion studies are not comparable with repository conditions. In the existing studies either the bicarbonate concentrations or pH of the solutions were too high. In addition, no such studies were available, in which not only the effect of carbonate ions, but also possible synergetic effects of them with other aggressive ions would have been clarified. The voltammetric results of the experimental part of this work point to a bilayer structure of the anodic film on copper in neutral solutions containing HCO{sub 3}{sup -}ions. The transport of ionic defects through a thin continuous p-type semiconductor layer was concluded to be the rate limiting step of the anodic oxidation of copper in the stability region of monovalent copper and in the mixed oxide (Cu(I)/Cu(II) oxide) region. Films formed in the divalent copper region did not show well-pronounced semiconductor behaviour. Substantial evidence was found in the voltammetric, CER and impedance results for the increased defectiveness of the anodic film in the Cu(II) region. The

  18. Self-assembled 1-octadecyl-1H-benzimidazole film on copper ...

    Indian Academy of Sciences (India)

    ature for the formation of a protective film on copper have been established using impedance studies. The. OBI film ... these molecules limits their application in industry.7. Owing to strict ..... and (b) shows AFM images such as 3D-topography,.

  19. Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Patake, V.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Joshi, S.S. [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: l_chandrakant@yahoo.com; Joo, Oh-Shim [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: joocat@kist.rre.kr

    2009-03-15

    In present study, the porous amorphous copper oxide thin films have been deposited from alkaline sulphate bath. The cathodic electrodeposition method was employed to deposit copper oxide film at room temperature on stainless steel substrate. Their structural and surface morphological properties were investigated by means of X-ray diffraction (XRD) and scanning electron micrograph (SEM), respectively. To propose this as a new material for possible application in the supercapacitor, its electrochemical properties have been studied in aqueous 1 M Na{sub 2}SO{sub 4} electrolyte using cyclic voltammetry. The structural analysis from XRD pattern showed the formation of amorphous copper oxide film on the substrate. The surface morphological studies from scanning electron micrographs revealed the formation of porous cauliflower-like copper oxide film. The cyclic voltammetric curves showed symmetric nature and increase in capacitance with increase in film thickness. The maximum specific capacitance of 36 F g{sup -1} was exhibited for the 0.6959 mg cm{sup -2} film thickness. This shows that low-cost copper oxide electrode will be a potential application in supercapacitor.

  20. Improvement of copper plating adhesion on silane modified PET film by ultrasonic-assisted electroless deposition

    International Nuclear Information System (INIS)

    Lu Yinxiang

    2010-01-01

    Copper thin film on silane modified poly(ethylene terephthalate) (PET) substrate was fabricated by ultrasonic-assisted electroless deposition. The composition and topography of copper plating PET films were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Peel adhesion strength, as high as 16.7 N/cm, was achieved for the planting copper layer to the modified PET substrate with ultrasonic-assisted deposition; however, a relative low value as 11.9 N/cm was obtained for the sample without ultrasonic vibration by the same measurement. The electrical conductivity of Cu film was changed from 7.9 x 10 4 to 2.1 x 10 5 S/cm by using ultrasonic technique. Ultrasonic operation has the significant merits of fast deposition and formation of good membranes for electroless deposition of Cu on PET film.

  1. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  2. A novel application of the CuI thin film for preparing thin copper nanowires

    International Nuclear Information System (INIS)

    Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

    2005-01-01

    We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

  3. Multilayer TiC/TiN diffusion barrier films for copper

    International Nuclear Information System (INIS)

    Yoganand, S.N.; Raghuveer, M.S.; Jagannadham, K.; Wu, L.; Karoui, A.; Rozgonyi, G.

    2002-01-01

    TiC/TiN thin films deposited by reactive magnetron sputtering on Si (100) substrates were investigated by transmission electron microscopy for microstructure and by deep level transient spectroscopy (DLTS) for diffusion barrier against copper. TiN thin films deposited on Si substrates at a substrate temperature of 600 deg. C were textured, and TiC thin films deposited at the same temperature were polycrystalline. TiC/TiN multilayer films also showed the same characteristics with the formation of an additional interaction layer. The diffusion barrier characteristics of the TiC/TiN/Si were determined by DLTS and the results showed that the films completely prevented diffusion of copper into Si

  4. Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Szwachta G.

    2016-06-01

    Full Text Available High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200 and TiN(111 thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN(200/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.

  5. Structural and phase changes in copper-fullerene films by ion implantation and annealing

    International Nuclear Information System (INIS)

    Shpilevsky, E.M.; Baran, L.V.; Okatova, G.P.; Jakimovich, A.V.

    2001-01-01

    The structural and phase changes and the electrical properties of copper - fullerene (Cu-C 60 ) films by the ion implantation(B + , E=80 keV, D 5·10 21 m -2 ) and the thermal annealing are described. We found the copper-fullerene solid supersaturated solution formed in process of the two-component films obtaining. The result of the thermal annealing is the phase segregation of fullerene. It has been established the ion implantation adduces to the partial fragmentation of fullerene, to the destruction of the C 60 molecules and to the formation of the CuB 24 , B 25 C and B 4 C phases

  6. Influence of Heat Treatment on the Morphologies of Copper Nanoparticles Based Films by a Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Wei Liu

    2017-01-01

    Full Text Available We have investigated the influence of heat treatment on the morphologies of copper nanoparticles based films on glass slides by a spin coating method. The experiments show that heat treatment can modify the sizes and morphologies of copper nanoparticles based films on glass slides. We suggest that through changing the parameters of heat treatment process may be helpful to vary the scattering and absorbing intensity of copper nanoparticles when used in energy harvesting/conversion and optical devices.

  7. Angular dependence of preferential sputtering and composition in aluminum--copper thin films

    International Nuclear Information System (INIS)

    Rudeck, P.J.; Harper, J.M.E.; Fryer, P.M.

    1989-01-01

    The copper concentration in aluminum--copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al--Cu alloys as a function of the Cu concentration (5--13 at. %) and the angle of ion incidence (0--40 0 from normal). During deposition, the films were partially resputtered by 500-eV Ar + ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40 0 incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that in multicomponent film deposition under ion bombardment, the film composition will vary as a function of the surface topography. We will also show how the level of argon left trapped in the films varies inversely with respect to the ion flux

  8. Morphology and thermal stability of Ti-doped copper nitride films

    International Nuclear Information System (INIS)

    Fan Xiaoyan; Wu Zhiguo; Li Huajun; Geng Baisong; Li Chun; Yan Pengxun

    2007-01-01

    A weakly Ti-doped copper nitride (Cu 3 N) film was prepared by cylindrical magnetron sputtering. The XPS results indicate that Ti atoms do not substitute for the Cu atoms but probably locate at the grain boundaries. The columnar grains size is about half of that of the undoped Cu 3 N film and the surface is smoother. For weakly Ti-doped Cu 3 N films, a dense layer appears on top of the columnar crystals. The RMS of the Cu film formed by annealing of the weakly Ti-doped Cu 3 N film is more than twice larger than that of the film before annealing. Compared with the undoped Cu 3 N film, it possesses fine thermal stability both in vacuum and in atmosphere

  9. Recovery of electrical resistance in copper films on polyethylene terephthalate subjected to a tensile strain

    International Nuclear Information System (INIS)

    Glushko, O.; Marx, V.M.; Kirchlechner, C.; Zizak, I.; Cordill, M.J.

    2014-01-01

    Substantial recovery (decrease) of electrical resistance during and after unloading is demonstrated for copper films on polyethylene terephthalate substrates subjected to a tensile strain with different peak values. Particularly, the films strained to 5% exhibit full resistance recovery after unloading despite clearly visible plastic deformation of the film. The recovery of electrical resistance in connection with the mechanical behavior of film/substrate couple is discussed with the help of in situ scanning electron microscopy and X-ray diffraction analysis. - Highlights: • Tensile tests on 200 nm Cu films on PET substrate are performed. • Electrical resistance is recorded in-situ during loading and unloading. • Significant recovery (decrease) of resistance is observed during and after unloading. • Films strained to 5% demonstrate full resistance recovery. • Viscoelastic relaxation of PET is responsible for recovery of Cu film resistance

  10. IR spectroscopy studies of silver and copper nano-films

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Fanzhen

    2007-01-10

    The present work is focused on the infrared optical properties of thin Ag and Cu films grown on MgO(001) and the Surface-Enhanced Infrared Absorption (SEIRA) of CO on these metal films. During both the deposition of the metal films onto MgO(001) and gas exposure to the metal films at low temperatures (<100 K) in Ultra High Vacuum (UHV), infrared spectra were captured in situ in transmission or reflection geometry. Afterwards the surface morphology of the films was examined ex situ by atomic force microscopy (AFM). For the first time, an infrared reflectance minimum was found during the metal film growth. The infrared optical properties of some films can be described by the Drude-type model or the Effective Medium Model. The Ag films show different surface morphologies at different substrate temperatures and at different final thicknesses. Also the SEIRA of CO adsorbed on Ag films is strongly related to the surface morphologies. The Cu films prepared at room temperature show island like surface morphology. SEIRA of CO adsorbed on Cu films shows differences depending on the Cu island size. (orig.)

  11. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  12. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  13. Polystyrene films as barrier layers for corrosion protection of copper and copper alloys.

    Science.gov (United States)

    Románszki, Loránd; Datsenko, Iaryna; May, Zoltán; Telegdi, Judit; Nyikos, Lajos; Sand, Wolfgang

    2014-06-01

    Dip-coated polystyrene layers of sub-micrometre thickness (85-500nm) have been applied on copper and copper alloys (aluminium brass, copper-nickel 70/30), as well as on stainless steel 304, and produced an effective barrier against corrosion and adhesion of corrosion-relevant microorganisms. According to the dynamic wettability measurements, the coatings exhibited high advancing (103°), receding (79°) and equilibrium (87°) contact angles, low contact angle hysteresis (6°) and surface free energy (31mJ/m(2)). The corrosion rate of copper-nickel 70/30 alloy samples in 3.5% NaCl was as low as 3.2μm/a (44% of that of the uncoated samples), and in artificial seawater was only 0.9μm/a (29% of that of the uncoated samples). Cell adhesion was studied by fluorescence microscopy, using monoculture of Desulfovibrio alaskensis. The coatings not only decreased the corrosion rate but also markedly reduced the number of bacterial cells adhered to the coated surfaces. The PS coating on copper gave the best result, 2×10(3)cells/cm(2) (1% of that of the uncoated control). © 2013 Elsevier B.V. All rights reserved.

  14. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  15. Buffer Film Assisted Growth of Dense MWCNTs on Copper Foils for Flexible Electrochemical Applications

    Directory of Open Access Journals (Sweden)

    Udomdej Pakdee

    2017-01-01

    Full Text Available The novel Inconel buffer films were prepared on copper foils using unbalance direct current (DC magnetron sputtering. These films were employed as buffer layers for supporting the dense growth of multiwalled carbon nanotubes (MWCNTs. Thermal chemical vapor deposition (CVD with metal alloys such as stainless steel (SS type 304 films was considered to synthesize MWCNTs. To understand the effectiveness of these buffer films, the MWCNTs grown on buffer-free layer were carried out as a comparison. The main problem such as the diffusion of catalysts into the oxide layer of metal substrate during the CVD process was solved together with a creation of good electrical contact between substrate and nanotubes. The morphologies, crystallinities, and electrochemical behaviors of MWCNTs grown on Inconel buffer films with 304 SS catalysts revealed the better results for applying in flexible electrochemical applications.

  16. Effect of self purification on the structural optical and electrical properties of copper doped oxidized Zn films

    International Nuclear Information System (INIS)

    Koshy, Obey; Abdul Khadar, M.

    2015-01-01

    The effect of self purification mechanism is studied on oxidized Cu–Zn thin films. Oxidized Cu–Zn thin films were prepared by thermal evaporation on glass substrates. XRD studies indicate that the oxidized Cu–Zn thin films are of hexagonal wurtzite structure. AFM images shows that with increase in copper wt. percent the nanoparticle morphology of oxidized Zn film turned to one dimensional nanorod morphology. XPS spectra of the oxidized Cu–Zn thin films shows the oxidized state of zinc and copper. The PL spectra of oxidized Zn film showed a strong and narrow near band edge emission at 380 nm whereas in the case of oxidized Cu–Zn thin films the emission showed peak near 410 nm corresponding to peak related to copper. With increase in copper content, the intensity of the defect emission decreased due to the self purification mechanism in nanomaterials. In addition the resistivity of doped films increased due to the self purification mechanism in nanomaterials. - Highlights: • Copper doping in ZnO resulted in the increase in blue emission due to defect levels formed. • The intensity of the luminescence peak of the doped film sample decreased and resistivity increased due to the self purification mechanism in nanomaterials.

  17. Mechanical Properties of Oxide Films on Electrolytic In-process Dressing (ELID) Copper-based Grinding Wheel

    Science.gov (United States)

    Kuai, J. C.; Wang, J. W.; Jiang, C. R.; Zhang, H. L.; Yang, Z. B.

    2018-05-01

    The mechanical properties of oxide films on copper based grinding wheel were studied by nanoindentation technique. The analysis of load displacement shows that the creep phenomenon occurs during the loading stage. Results show that the oxide film and the matrix have different characteristics, and the rigidity of the copper based grinding wheel is 0.6-1.3mN/nm, which is weaker than that of the matrix; the hardness of the oxide film is 2000-2300MPa, which is higher than the matrix; and the elastic modulus of the oxide film is 100-120GPa, also higher than the matrix.

  18. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  19. Preparation of copper doped DLC films by DC PE-CVD method

    International Nuclear Information System (INIS)

    Marton, M.; Vojs, M.; Kotlar, M.; Michniak, P.; Flickyngerova, S.; Vesely, M.; Redhammer, R.

    2012-01-01

    We used PECVD method for deposition of Cu incorporated DLC thin films from CH 4 /Ar gas mixture. The size of nanoparticles varied with changing the deposition conditions in the range of tenth to hundreds of nm. After annealing process, new small Cu particles appeared in the space between the as deposited ones, and all the particles were distributed more homogenous within the films. The resistivity of the DLC films decreased first with adding of copper to 10 to 6·10 3 Ωcm, and second with the annealing process to 4·10 -2 to 3 Ωcm. Raman spectra show the tendency of DLCs to become more graphitic with increasing annealing temperature, which may be one possible contribution to increased conductivity of the annealed Cu-DLC films. (authors)

  20. Work function measurements of copper nanoparticle intercalated polyaniline nanocomposite thin films

    Science.gov (United States)

    Patil, U. V.; Ramgir, Niranjan S.; Bhogale, A.; Debnath, A. K.; Muthe, K. P.; Gadkari, S. C.; Kothari, D. C.

    2017-05-01

    The nature of contact between the electrode and the sensing material plays a crucial role in governing the sensing mechanism. Thin films of polyaniline (PANI) and copper-polyaniline nanocomposite (NC) have been deposited at room temperatures by in-situ oxidative polymerization of aniline in the presence of Cu nanoparticles. For sensing applications a thin film Au (gold) ˜100 nm is deposited and used as a conducting electrode. To understand the nature of contact (i.e., ohmic or Schottky) the work function of the conducting polyaniline and nanocomposite films were measured using Kelvin Probe method. I-V characteristics of PANI and NC films investigated at room temperatures further corroborates and confirms the formation of Ohmic contact as evident from work function measurements.

  1. Copper spherical cavity arrays: Fluorescence enhancement in PFO films

    Energy Technology Data Exchange (ETDEWEB)

    Spada, Edna R., E-mail: edspada@gmail.com [Instituto de Física de São Carlos, Universidade de São Paulo, Caixa Postal 369, 13560-970, São Carlos, SP (Brazil); Valente, Gustavo T.; Pereira-da-Silva, Marcelo A. [Instituto de Física de São Carlos, Universidade de São Paulo, Caixa Postal 369, 13560-970, São Carlos, SP (Brazil); Sartorelli, Maria L. [Departamento de Física, Universidade Federal de Santa Catarina, Caixa Postal 476, 88040-900, Florianópolis, SC (Brazil); Guimarães, Francisco E.G.; Faria, Roberto M. [Instituto de Física de São Carlos, Universidade de São Paulo, Caixa Postal 369, 13560-970, São Carlos, SP (Brazil)

    2017-01-15

    This manuscript addresses the use of a well-ordered antidot copper nanostructure as a active substrate for surface enhancement fluorescence (SEF). The antidot array was produced by electrodeposition and nanosphere lithography and characterized by microscopy technique, its successful application as SEF-active substrates was verified using polyfluorene (PFO) as a probe layer. Atomic force microscopy (AFM) was used to evaluate the regularity of the metal surface as well PFO coated process and confocal laser fluorescence microscopy (CLSM) to determine the behavior exhibited by the fluorescent layer due to the existence of the nanostructured surface. No accumulation PFO in the cavities was detected and the more intense emission regions coincides with the position of the cavities and is at about one order of magnitude higher.

  2. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Energy Technology Data Exchange (ETDEWEB)

    Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

    2016-12-15

    Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

  3. The measurement of conductivity of copper indium disulphide thin films against temperature and thickness

    International Nuclear Information System (INIS)

    Yussof Wahab; Roslinda Zainal; Samsudi Sakrani

    1996-01-01

    Ternary semiconductor copper indium disulphide (CuInS sub 2) thin films have been prepared by thermal evaporation. Three stacked layers of film starting with copper, indium and finally sulphur was deposited on glass substrate in the thickness ratio of 1: 1: I0. The films were then annealed in carbon block by method known as encapsulated sulphurization at 350 degree C for 4 hours. The XRD analysis for four samples of thickness of 449.5, 586, 612 and 654 nm showed that stoichiometric CuInS sub 2, were formed at this annealing condition. The electrical conductivity of CuInS sub 2 thin films were measured against temperature from 150K to 300K. The conductivity values were between 76.6 Sm sup -1 to 631.26 Sm sup -1 and the result showed that it increase exponentially with temperature for the above temperature range. The resulting activation energies were found to be in the range 0.05 to 0.08 eV. This suggested that hopping mechanism predominant to the conducting process. It also found that the conductivity decreased with increasing film thickness

  4. Laser-induced chemical liquid deposition of discontinuous and continuous copper films

    Czech Academy of Sciences Publication Activity Database

    Ouchi, A.; Bastl, Zdeněk; Boháček, Jaroslav; Šubrt, Jan; Pola, Josef

    2007-01-01

    Roč. 201, č. 8 (2007), s. 4728-4733 ISSN 0257-8972 R&D Projects: GA AV ČR 1ET400400413 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z40320502; CEZ:AV0Z40720504 Keywords : copper films * laser photolysis * Cu(II) acetylacetonate * chemical liquid deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.678, year: 2007

  5. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Wulff, H.; Rebl, H.; Zietz, C.; Arndt, K.; Bogdanowicz, R.; Nebe, B.; Bader, R.; Podbielski, A.; Hubička, Zdeněk; Hippler, R.

    2011-01-01

    Roč. 31, č. 7 (2011), s. 1512-1519 ISSN 0928-4931 R&D Projects: GA ČR(CZ) GAP205/11/0386; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100520 Keywords : implant coating * titanium-copper film * pulsed magnetron sputtering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.686, year: 2011

  6. Film formation of non-planar phthalocyanines on copper(i) iodide

    OpenAIRE

    Ramadan, A. J.; Fearn, S.; Jones, T. S. (Tim S.); Heutz, S.; Rochford, L. A. (Luke A.)

    2016-01-01

    Structural templating is frequently used in organic photovoltaic devices to control the properties of the functional layers and therefore improve efficiencies. Modification of the substrate temperatures has also been shown to impact the structure and morphology of phthalocyanine thin films. Here we combine templating by copper iodide and high substrate temperature growth and study its effect on the structure and morphology of two different non-planar phthalocyanines, chloroaluminium (ClAlPc) ...

  7. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2013-12-15

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules’ GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  8. Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications

    KAUST Repository

    Islam, Md. Anisul

    2016-03-10

    In this study, Copper oxide thin films were deposited on copper plate by electrodeposition process in an electrolytic bath containing CuSO4.5H2O, 3M lactic acid and NaOH. Copper oxide films were electrodeposited at different pH and different concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher band gap than those deposited at higher bath concentration. The band gap of copper oxide films also significantly changes with pH of the bath solution. It was also observed that with the increase of the pH of bath solution band gap of copper oxide film decreased. © 2015 IEEE.

  9. Evolution of the microstructure in nanocrystalline copper electrodeposits during room temperature storage

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2007-01-01

    The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of X-ray diffraction analysis and simultaneous measurement of the electrical resistivity as a function of time. In-situ studies were started immediately after electrodeposition......, crystallographic texture changes by multiple twinning and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer the slower is the microstructure evolution and self-annealing...

  10. Layer-by-Layer Nanoassembly of Copper Indium Gallium Selenium Nanoparticle Films for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    A. Hemati

    2012-01-01

    Full Text Available Thin films of CIGS nanoparticles interdigited with polymers have been fabricated through a cost-effective nonvacuum film deposition process called layer-by-layer (LbL nanoassembly. CIGS nanoparticles synthesized by heating copper chloride, indium chloride, gallium chloride, and selenium in oleylamine were dispersed in water, and desired surface charges were obtained through pH regulation and by coating the particles with polystyrene sulfonate (PSS. Raising the pH of the nanoparticle dispersion reduced the zeta-potential from +61 mV at pH 7 to −51 mV at pH 10.5. Coating the CIGS nanoparticles with PSS (CIGS-PSS produced a stable dispersion in water with −56.9 mV zeta-potential. Thin films of oppositely charged CIGS nanoparticles (CIGS/CIGS, CIGS nanoparticles and PSS (CIGS/PSS, and PSS-coated CIGS nanoparticles and polyethylenimine (CIGS-PSS/PEI were constructed through the LbL nanoassembly. Film thickness and resistivity of each bilayer of the films were measured, and photoelectric properties of the films were studied for solar cell applications. Solar cell devices fabricated with a 219 nm CIGS film, when illuminated by 50 W light-source, produced 0.7 V open circuit voltage and 0.3 mA/cm2 short circuit current density.

  11. Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-08-01

    Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

  12. Decomposition of poly(amide-imide) film enameled on solid copper wire using atmospheric pressure non-equilibrium plasma.

    Science.gov (United States)

    Sugiyama, Kazuo; Suzuki, Katsunori; Kuwasima, Shusuke; Aoki, Yosuke; Yajima, Tatsuhiko

    2009-01-01

    The decomposition of a poly(amide-imide) thin film coated on a solid copper wire was attempted using atmospheric pressure non-equilibrium plasma. The plasma was produced by applying microwave power to an electrically conductive material in a gas mixture of argon, oxygen, and hydrogen. The poly(amide-imide) thin film was easily decomposed by argon-oxygen mixed gas plasma and an oxidized copper surface was obtained. The reduction of the oxidized surface with argon-hydrogen mixed gas plasma rapidly yielded a metallic copper surface. A continuous plasma heat-treatment process using a combination of both the argon-oxygen plasma and argon-hydrogen plasma was found to be suitable for the decomposition of the poly(amide-imide) thin film coated on the solid copper wire.

  13. Optical and infrared spectroscopic studies of chemical sensing by copper phthalocyanine thin films

    International Nuclear Information System (INIS)

    Singh, Sukhwinder; Tripathi, S.K.; Saini, G.S.S.

    2008-01-01

    Thin films of copper phthalocyanine have been deposited on KBr and glass substrates by thermal evaporation method and characterized by the X-ray diffraction and optical absorption techniques. The observed X-ray pattern suggests the presence of α crystalline phase of copper phthalocyanine in the as-deposited thin films. Infrared spectra of thin films on the KBr pallet before and after exposure to the vapours of ammonia and methanol have been recorded in the wavenumber region of 400-1650 cm -1 . The observed infrared bands also confirm the α crystalline phase. On exposure, change in the intensity of some bands is observed. A new band at 1385 cm -1 , forbidden under ideal D 4h point group symmetry, is also observed in the spectra of exposed thin films. These changes in the spectra are interpreted in terms of the lowering of molecular symmetry from D 4h to C 4v . Axial ligation of the vapour molecules on fifth coordination site of the metal ion is responsible for lowering of the molecular symmetry

  14. Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

    Science.gov (United States)

    Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

    2018-01-01

    The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

  15. Copper Antimony Chalcogenide Thin Film PV Device Development

    Energy Technology Data Exchange (ETDEWEB)

    Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

    2015-06-14

    Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

  16. Cathodic reduction of the duplex oxide films formed on copper in air with high relative humidity at 60 deg C

    International Nuclear Information System (INIS)

    Seo, M.; Ishikawa, Y.; Kodaira, M.; Sugimoto, A.; Nakayama, S.; Watanabe, M.; Furuya, S.; Minamitani, R.; Miyata, Y.; Nishikata, A.; Notoya, T.

    2005-01-01

    The cathodic reduction of duplex air-formed oxide film on copper was performed at a constant current density of i c = -50 μA cm -2 in deaerated 0.1 M KCl solution to investigate the sequence of cathodic reduction of each oxide layer and its mechanism. The single-phase thick CuO film on copper was also cathodically reduced at i c = -50 μA cm -2 or -2.5 mA cm -2 . The surface characterizations of the air-formed oxide film and single-phase CuO film before cathodic reduction and after partial or complete cathodic reduction were performed by XPS and X-ray diffraction, respectively. The two plateau regions appeared in the potential vs. time curve during cathodic reduction of the duplex air-formed oxide film on copper, while one plateau region was observed in the potential-time curve during cathodic reduction of the single-phase CuO film on copper. The potential in the first plateau region for the air-formed film coincided with that in the plateau region for the CuO film. The results of XPS and X-ray diffraction suggested that in the first plateau region, the outer CuO layer is directly reduced to metallic Cu, while in the second plateau region, the inner Cu 2 O layer is reduced to metallic Cu

  17. Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

    Science.gov (United States)

    Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

    2008-05-01

    Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

  18. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Ali, N., E-mail: nisar.ali@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Department of Physics, Govt. Post Graduate Jehanzeb College Saidu Sharif, Swat, 19200 (Pakistan); Hussain, A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Wan Shamsuri, W.N. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [Department of Physics and Electrical Engineering, Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST (United Kingdom)

    2016-12-30

    Highlights: • A new and novel material for solar cell applications is demonstrated as a replacement for toxic and expansive compounds. • The materials used in this compound are abundant and low cost. • Compound exhibit unusual optical and electrical properties. • The band gap was found to be comparable with that of GaAs. - Abstract: Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs – one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  19. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  20. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    International Nuclear Information System (INIS)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-01-01

    The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

  1. Fabrication of cuprous chloride films on copper substrate by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Ting; Ci, Ji-Wei; Tu, Wei-Chen [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Shen, Chin-Chang; Wu, Chih-Hung [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China)

    2015-09-30

    Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl{sub 2}) compound as the precursor for both the Cu{sup 2+} and Cl{sup −} sources, together with repeated HCl dip treatments. An HCl dip pretreatment of the substrate favored the nucleation of CuCl crystallites. Further, interrupting the film deposition and including an HCl dip treatment of the film growth surface facilitated the deposition of a full-coverage CuCl film. A dual beam (FIB/SEM) system with energy dispersive spectrometry facilities attached revealed a homogeneous CuCl layer with a flat-top surface and an average thickness of about 1 μm. Both the excitonic and biexcitonic emission lines were well-resolved in the 6.4 K photoluminescence spectra. In particular, the free exciton emission line was observable at room temperature, indicating the good quality of the CuCl films prepared by CBD. - Highlights: • Cuprous chloride (CuCl) was prepared on Cu substrate by chemical bath deposition. • HCl dip treatments facilitated the deposition of a full-coverage CuCl film. • A homogeneous elemental distribution was recognized for the deposited CuCl layer. • Excitonic and biexcitonic photoluminescence lines of CuCl films were well-resolved. • The free exciton emission line of CuCl films was observable at room temperature.

  2. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  3. Effect of acetic acid on wet patterning of copper/molybdenum thin films in phosphoric acid solution

    International Nuclear Information System (INIS)

    Seo, Bo.-Hyun; Lee, Sang-Hyuk; Park, In-Sun; Seo, Jong Hyun; Choe, HeeHwan; Jeon, Jae-Hong; Hong, Munpyo; Lee, Yong Uk; Winkler, Joerg

    2011-01-01

    Copper metallization is a key issue for high performance thin film transistor (TFT) technology. A phosphoric acid based copper etchant is a potentially attractive alternative to the conventional hydrogen peroxide based etchant due to its longer-life expectancy time and higher stability in use. In this paper, it is shown that amount of the acetic acid in the phosphoric based copper etchant plays an important role in controlling the galvanic reaction between the copper and the molybdenum. As the concentration of acetic acid in the phosphoric mixture solution increased from 0 M to 0.4 M, the measured galvanic current density dropped from 32 mA/cm 2 to 26 mA/cm 2 , indicating that the acetic acid induces the lower galvanic reaction between the copper and the molybdenum in the solution. From the XPS analysis, with the addition of the acetic acid, the thickness of the protective MoO 2 passive film covering the molybdenum surface grew and the dissolution rate of the molybdenum thin film decreased. However, the dissolution rate of the copper thin film increased as the concentration of acetic acid in the mixture solution increased.

  4. Effect of acetic acid on wet patterning of copper/molybdenum thin films in phosphoric acid solution

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Bo.-Hyun; Lee, Sang-Hyuk; Park, In-Sun [Department of Materials Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Seo, Jong Hyun, E-mail: jhseo@kau.ac.kr [Department of Materials Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Choe, HeeHwan; Jeon, Jae-Hong [School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University, Hwajeon, Goyang, Gyonggi-do 412-791 (Korea, Republic of); Hong, Munpyo [Display and Semiconductor Physics, Korea University (Korea, Republic of); Lee, Yong Uk [PETEC (The Printable Electronics Technology Centre) (United Kingdom); Winkler, Joerg [PLANSEE Metal GmbH, Metallwerk-Plansee-Str. 71A-6600, Reutte (Austria)

    2011-08-01

    Copper metallization is a key issue for high performance thin film transistor (TFT) technology. A phosphoric acid based copper etchant is a potentially attractive alternative to the conventional hydrogen peroxide based etchant due to its longer-life expectancy time and higher stability in use. In this paper, it is shown that amount of the acetic acid in the phosphoric based copper etchant plays an important role in controlling the galvanic reaction between the copper and the molybdenum. As the concentration of acetic acid in the phosphoric mixture solution increased from 0 M to 0.4 M, the measured galvanic current density dropped from 32 mA/cm{sup 2} to 26 mA/cm{sup 2}, indicating that the acetic acid induces the lower galvanic reaction between the copper and the molybdenum in the solution. From the XPS analysis, with the addition of the acetic acid, the thickness of the protective MoO{sub 2} passive film covering the molybdenum surface grew and the dissolution rate of the molybdenum thin film decreased. However, the dissolution rate of the copper thin film increased as the concentration of acetic acid in the mixture solution increased.

  5. Eco-nano composite films containing copper as potential antimicrobial active packaging

    Energy Technology Data Exchange (ETDEWEB)

    Bruna, Julio E.; Gonzalez, Valeska; Rodriguez, Francisco; Guarda, Abel; Galotto, Maria Jose, E-mail: julio.bruna@usach.cl [Center for the Development of Nanoscience and Nanotechnology, Packaging Laboratory, University of Santiago de Chile. Santiago (Chile)

    2011-07-01

    The antimicrobial efficiency of Cellulose Acetate/MMTCu and Chitosan/MMTCu nano composites against Escherichia Coli 0157:H7 n/t has been studied in the present work. The MMT modified with copper were obtained using cation interchange in solution and the nano composites films were prepared using casting solution technique, being the biodegradable polymer (Cellulose Acetate or Chitosan) the main component and the montmorillonite modified with copper, the minority component. Characterization of MMTCu and the nano composites (CA/MMTCu and Ch/MMTCu), were carried out using XRD, AA, TGA, DSC and microbiological analysis. The nano composites showed to be more stable at higher temperature, resulting from the incorporation of MMTCu into the polymer. On the other hand, the results indicated that the antibacterial effect of nano composite increased with the proportion of MMTCu added. (author)

  6. Effect of hydroxyl bond formation on the adhesion improvement of a polyethylene copper thin film system

    International Nuclear Information System (INIS)

    Camacho, M.; Blantocas, G.; Ramos, H.

    2009-01-01

    Formation of hydroxyl bonds on the surface of a gas plasma treated high density polyethylene (HDPE) sheets significantly enhanced the adhesion strength of the polyethylene copper thin film system. Surface treatments using oxygen gas plasmas at varying plasma parameters are applied in this study to identify the most effective plasma parameters that would promote the best adhesion strength. Analysis of gas plasma adulterated HDPE sheets showed best enhancement of polyethylene copper adhesion after an oxygen gas plasma treatment for 60 minutes at 5mA discharge current. Scanning Electron Microscopy Analysis, Fourier Transform Infrared Spectroscopy and Adhesion measurements using Pull out Force Analysis were used to measure the changes in the surface chemistry and surface topology of the HDPE sheets. (author)

  7. Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

    Energy Technology Data Exchange (ETDEWEB)

    Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

    2005-05-16

    A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

  8. Comparison of interaction mechanisms of copper phthalocyanine and nickel phthalocyanine thin films with chemical vapours

    Science.gov (United States)

    Ridhi, R.; Singh, Sukhdeep; Saini, G. S. S.; Tripathi, S. K.

    2018-04-01

    The present study deals with comparing interaction mechanisms of copper phthalocyanine and nickel phthalocyanine with versatile chemical vapours: reducing, stable aromatic and oxidizing vapours namely; diethylamine, benzene and bromine. The variation in electrical current of phthalocyanines with exposure of chemical vapours is used as the detection parameter for studying interaction behaviour. Nickel phthalocyanine is found to exhibit anomalous behaviour after exposure of reducing vapour diethylamine due to alteration in its spectroscopic transitions and magnetic states. The observed sensitivities of copper phthalocyanine and nickel phthalcyanine films are different in spite of their similar bond numbers, indicating significant role of central metal atom in interaction mechanism. The variations in electronic transition levels after vapours exposure, studied using UV-Visible spectroscopy confirmed our electrical sensing results. Bromine exposure leads to significant changes in vibrational bands of metal phthalocyanines as compared to other vapours.

  9. Eco-nano composite films containing copper as potential antimicrobial active packaging

    International Nuclear Information System (INIS)

    Bruna, Julio E.; Gonzalez, Valeska; Rodriguez, Francisco; Guarda, Abel; Galotto, Maria Jose

    2011-01-01

    The antimicrobial efficiency of Cellulose Acetate/MMTCu and Chitosan/MMTCu nano composites against Escherichia Coli 0157:H7 n/t has been studied in the present work. The MMT modified with copper were obtained using cation interchange in solution and the nano composites films were prepared using casting solution technique, being the biodegradable polymer (Cellulose Acetate or Chitosan) the main component and the montmorillonite modified with copper, the minority component. Characterization of MMTCu and the nano composites (CA/MMTCu and Ch/MMTCu), were carried out using XRD, AA, TGA, DSC and microbiological analysis. The nano composites showed to be more stable at higher temperature, resulting from the incorporation of MMTCu into the polymer. On the other hand, the results indicated that the antibacterial effect of nano composite increased with the proportion of MMTCu added. (author)

  10. Synchronous determination of mercury (II) and copper (II) based on quantum dots-multilayer film

    International Nuclear Information System (INIS)

    Ma Qiang; Ha Enna; Yang Fengping; Su Xingguang

    2011-01-01

    Graphical abstract: We developed a sensitive sensor for synchronous detection of Hg (II) and Cu (II) based on the quenchedand recovered PL intensity of QDs-multilayer films. Solutions containing Hg (II) or Cu (II) were used to quench the fluorescence of the QDs-multilayer films firstly. Then, glutathione (GSH) was used to remove Hg (II) or Cu (II) from the QDs-multilayer films due to stronger affinity of GSH-metal ions than that of QDs metal ions. Thus, the fluorescence of QDs-multilayer films was recovered. Highlights: → QDs-multilayer films were developed for synchronous detection of Hg (II) and Cu (II). → Hg (II) and Cu (II) could quench the photoluminescence of the QDs-multilayer films. → Glutathione was used to remove metal ions and recovery photoluminescence of QDs-multilayer films. - Abstract: A sensitive sensor for mercury (II) and copper (II) synchronous detection was established via the changed photoluminescence of CdTe quantum dots (QDs) multilayer films in this work. QDs were deposited on the quartz slides to form QDs-multilayer films by electrostatic interactions with poly(dimethyldiallyl ammonium chloride) (PDDA). Hg 2+ or Cu 2+ could quench the photoluminescence of the QDs-multilayer films, and glutathione (GSH) was used to remove Hg 2+ or Cu 2+ from QDs-multilayer films due to strong affinity of GSH-metal ions, which resulted in the recovered photoluminescence of QDs-multilayer films. There are good linear relationships between the metal ions concentration and the photoluminescence intensity of QDs in the quenched and recovered process. It was found that the Stern-Volmer constants for Hg 2+ are higher than that for Cu 2+ . Based on different quenching and recovery constant between Hg 2+ and Cu 2+ , the synchronous detection of Hg 2+ and Cu 2+ can be achieved. The linear ranges of this assay were obtained from 0.005 to 0.5 μM for Hg 2+ and from 0.01 to 1 μM for Cu 2+ , respectively. And the artificial water samples were determined by this

  11. Surface structure of ultrathin metal films deposited on copper single crystals

    International Nuclear Information System (INIS)

    Butterfield, M.T.

    2000-04-01

    Ultrathin films of Cobalt, Iron and Manganese have been thermally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural techniques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials with novel physical and magnetic properties, and hence new technological applications. Both Cobalt and Iron have been found to initially maintain a registry with the fcc Cu (111) surface in a manner consistent with pseudomorphic growth. This growth is complicated by island rather than layer by layer growth in the initials stages of the film. In both cases a change in the structure of the film seems to occur at a point where the coalescence of islands in the film may be expected to occur. When the film does change structure they do not form a perfect overlayer with the structure of their bulk counterpart. The films do contain a number of features representative of the bulk phase but also contain considerable disorder and possibly remnants of fcc (111) structure. The order present in these films can be greatly improved by annealing. Manganese appears to grow with an fcc Mn (111) lattice spacing and there is no sign of a change in structure in films of up to 4.61 ML thick. The gradual deposition and annealing of a film to 300 deg. C, with a total deposition time the same as that for a 1 ML thick film, causes a surface reconstruction to occur that is apparent in a R30 deg. (√3 x √3) LEED pattern. This is attributed to the formation of a surface alloy, which is also supported by the local expansion of the Cu lattice in the (111) direction. (author)

  12. Cost-effective disposable thiourea film modified copper electrode for capacitive immunosensor

    International Nuclear Information System (INIS)

    Limbut, Warakorn; Thavarungkul, Panote; Kanatharana, Proespichaya; Wongkittisuksa, Booncharoen; Asawatreratanakul, Punnee; Limsakul, Chusak

    2010-01-01

    Cost-effective disposable electrodes were fabricated from copper clad laminate, usually used for printed circuit board (PCB) in electronic industries, by using dry film photoresist. Electro-oxidation (anodisation) was employed to obtain a good formation of thiourea film on the electrode surface. The affinity binding pair of carcinoembryonic antigen (CEA) and anti-carcinoembryonic antigen (anti-CEA) was used as a model system. Anti-CEA was immobilized on thiourea film via covalent coupling. This modified electrode was incorporated with a capacitive system for CEA analysis. This capacitive immunosensor provided a linear range between 0.01 and 10 ng ml -1 with a detection limit of 10 pg ml -1 . When applied to analyze CEA in serum samples, the results agreed well with the enzyme linked fluorescent assay (ELFA) technique (P > 0.05). The proposed strategy for the preparation of disposable modified copper electrode is very cost effective and simple. Moreover, it provides good reproducibility. This technique can easily be applied to immobilize other biological sensing elements for biosensors development.

  13. The role of oxygen in the deposition of copper–calcium thin film as diffusion barrier for copper metallization

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Zhinong, E-mail: znyu@bit.edu.cn [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Ren, Ruihuang [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Xue, Jianshe; Yao, Qi; Li, Zhengliang; Hui, Guanbao [Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176 (China); Xue, Wei [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China)

    2015-02-15

    Highlights: • The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film. • The introduction of oxygen into the deposition of CuCa film is necessary to improve the adhesion of Cu film. • The CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate. - Abstract: The properties of copper (Cu) metallization based on copper–calcium (CuCa) diffusion barrier as a function of oxygen flux in the CuCa film deposition were investigated in view of adhesion, diffusion and electronic properties. The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film, however, and increases the resistance of Cu film. The introduction of oxygen into the deposition of CuCa film induces the improvement of adhesion and crystallinity of Cu film, but produces a slight increase of resistance. The increased resistance results from the partial oxidation of Cu film. The annealing process in vacuum further improves the adhesion, crystallinity and conductivity of Cu film. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) show that the CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate due to the formation of Ca oxide in the interface of CuCa/substrate.

  14. Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Catrangiu, Adriana-Simona; Sin, Ion [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Prioteasa, Paula [INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania); Cotarta, Adina [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Cojocaru, Anca, E-mail: a_cojocaru@chim.upb.ro [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Anicai, Liana [Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania); Visan, Teodor [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)

    2016-07-29

    Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of Sb{sub x}Te{sub y} or Cu{sub x}Te{sub y} semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb{sub 2}Te{sub 3} phase and Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, and Cu{sub 2.8}Te{sub 2} phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • Sb{sub x}Te{sub y} and Cu{sub x}Te{sub y} films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb{sub 2}Te{sub 3}, Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, Cu{sub 2.8}Te{sub 2} phases were identified in X-ray diffraction patterns.

  15. Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

    International Nuclear Information System (INIS)

    Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

    1982-01-01

    A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

  16. Indirect potentiometric titration of ascorbic acid in pharmaceutical preparations using copper based mercury film electrode.

    Science.gov (United States)

    Abdul Kamal Nazer, Meeran Mohideen; Hameed, Abdul Rahman Shahul; Riyazuddin, Patel

    2004-01-01

    A simple and rapid potentiometric method for the estimation of ascorbic acid in pharmaceutical dosage forms has been developed. The method is based on treating ascorbic acid with iodine and titration of the iodide produced equivalent to ascorbic acid with silver nitrate using Copper Based Mercury Film Electrode (CBMFE) as an indicator electrode. Interference study was carried to check possible interference of usual excipients and other vitamins. The precision and accuracy of the method was assessed by the application of lack-of-fit test and other statistical methods. The results of the proposed method and British Pharmacopoeia method were compared using F and t-statistical tests of significance.

  17. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    Science.gov (United States)

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  18. Titania seed layers for PZT thin film growth on copper-coated Kapton films

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Volkonskiy, O.; Hubička, Zdeněk; Dejneka, Alexandr; Jastrabík, Lubomír; Adolphi, B.; Bertram, M.; Gerlach, G.

    2009-01-01

    Roč. 108, č. 1 (2009), s. 57-66 ISSN 1058-4587 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KJB100100703 Institutional research plan: CEZ:AV0Z10100522 Keywords : copper coated Kapton * seed layer * seed layer * plasma deposition * XPS Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.329, year: 2009

  19. Rapid growth of diamond-like-carbon films by copper vapor laser ablation

    International Nuclear Information System (INIS)

    McLean, W.; Warner, B.E.; Havstad, M.A.

    1995-04-01

    Visible light from a copper vapor laser (CVL) operating with 510 and 578 nm radiation (intensity ratio approximately 2:1), an average power of 100 W, a pulse duration of 50 ns, and a repetition frequency of 4.4 kHz has been shown to produce high quality diamond-like-carbon (DLC) films at fluences between 2x10 8 and 5x10 10 W/cm 2 . Maximum deposition rates of 2000 μm·cm 2 /h were obtained at 5x10 8 W/cm 2 . DLC films with hardness values of approximately 60 GPa were characterized by a variety of techniques to confirm DLC character, hydrogen content, and surface morphology. The presence of C 2 in the vapor plume was confirmed by the presence of the C 2 Swan bands in emission spectra obtained during the process. Economic implications of process scale-up to industrially meaningful component sizes are presented

  20. Chemical reaction of atomic oxygen with evaporated films of copper, part 4

    Science.gov (United States)

    Fromhold, A. T.; Williams, J. R.

    1990-01-01

    Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

  1. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gallardo-Vega, C.; Cruz, W. de la

    2006-01-01

    Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10 -2 to 1.3 x 10 -1 Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu 3 N) and x = 0.25 (Cu 4 N) when the nitrogen pressure is 1.3 x 10 -1 and 5 x 10 -2 Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33

  2. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo-Vega, C. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Km. 107 Carretera Tijuana-Ensenada, A. Postal 2732, 22860, Ensenada B.C. (Mexico)]. E-mail: gallardo@ccmc.unam.mx; Cruz, W. de la [Centro de Ciencias de la Materia Condensada, UNAM, Km. 107 Carretera Tijuana-Ensenada, A. Postal 2681, 22860, Ensenada B.C. (Mexico)

    2006-09-15

    Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10{sup -2} to 1.3 x 10{sup -1} Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu{sub 3}N) and x = 0.25 (Cu{sub 4}N) when the nitrogen pressure is 1.3 x 10{sup -1} and 5 x 10{sup -2} Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.

  3. Chromatic annuli formation and sample oxidation on copper thin films by femtosecond laser

    Energy Technology Data Exchange (ETDEWEB)

    He, Shutong [Ultrafast Laser Laboratory, Key Laboratory of Opto-Electronic Information Technical Science of Ministry of Education, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Dipartimento di Fisica, Università di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Amoruso, Salvatore [Dipartimento di Fisica, Università di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Pang, Dongqing; Wang, Chingyue; Hu, Minglie, E-mail: huminglie@tju.edu.cn [Ultrafast Laser Laboratory, Key Laboratory of Opto-Electronic Information Technical Science of Ministry of Education, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China)

    2016-04-28

    We report an experimental investigation on the irradiation of copper thin films with high repetition rate femtosecond laser pulses (1040 nm, 50 MHz), in ambient air and liquid water. We observe a novel, striking phenomenon of chromatic copper oxides (CuO and Cu{sub 2}O) annuli generation. The characteristic features of the chromatic copper oxide annuli are studied by exploiting micro-Raman spectroscopy, optical and scanning electron microscopies. In the case of irradiation in water, the seldom investigated effects of the immersion time, t{sub w}, after irradiation with a fixed number of pulses are analyzed, and an intriguing dependence of the color of the chromatic annuli on t{sub w} is observed. This remarkable behavior is explained by proposing an interpretation scenario addressing the various processes involved in the process. Our experimental findings show that Cu{sub 2}O nanoparticles (size of ≈20 nm) and Cu{sub 2}O nanocubes (nanocube edges of ≈30, ≈60 nm) can be effectively generated by exploiting high repetition rate laser-assisted oxidation.

  4. Surface Functionalization of Thin-Film Composite Membranes with Copper Nanoparticles for Antimicrobial Surface Properties

    KAUST Repository

    Ben-Sasson, Moshe

    2014-01-07

    Biofouling is a major operational challenge in reverse osmosis (RO) desalination, motivating a search for improved biofouling control strategies. Copper, long known for its antibacterial activity and relatively low cost, is an attractive potential biocidal agent. In this paper, we present a method for loading copper nanoparticles (Cu-NPs) on the surface of a thin-film composite (TFC) polyamide RO membrane. Cu-NPs were synthesized using polyethyleneimine (PEI) as a capping agent, resulting in particles with an average radius of 34 nm and a copper content between 39 and 49 wt.%. The positive charge of the Cu-NPs imparted by the PEI allowed a simple electrostatic functionalization of the negatively charged RO membrane. We confirmed functionalization and irreversible binding of the Cu-NPs to the membrane surface with SEM and XPS after exposing the membrane to bath sonication. We also demonstrated that Cu-NP functionalization can be repeated after the Cu-NPs dissolve from the membrane surface. The Cu-NP functionalization had minimal impact on the intrinsic membrane transport parameters. Surface hydrophilicity and surface roughness were also maintained, and the membrane surface charge became positive after functionalization. The functionalized membrane exhibited significant antibacterial activity, leading to an 80-95% reduction in the number of attached live bacteria for three different model bacterial strains. Challenges associated with this functionalization method and its implementation in RO desalination are discussed. © 2013 American Chemical Society.

  5. Surface Functionalization of Thin-Film Composite Membranes with Copper Nanoparticles for Antimicrobial Surface Properties

    KAUST Repository

    Ben-Sasson, Moshe; Zodrow, Katherine R.; Genggeng, Qi; Kang, Yan; Giannelis, Emmanuel P.; Elimelech, Menachem

    2014-01-01

    Biofouling is a major operational challenge in reverse osmosis (RO) desalination, motivating a search for improved biofouling control strategies. Copper, long known for its antibacterial activity and relatively low cost, is an attractive potential biocidal agent. In this paper, we present a method for loading copper nanoparticles (Cu-NPs) on the surface of a thin-film composite (TFC) polyamide RO membrane. Cu-NPs were synthesized using polyethyleneimine (PEI) as a capping agent, resulting in particles with an average radius of 34 nm and a copper content between 39 and 49 wt.%. The positive charge of the Cu-NPs imparted by the PEI allowed a simple electrostatic functionalization of the negatively charged RO membrane. We confirmed functionalization and irreversible binding of the Cu-NPs to the membrane surface with SEM and XPS after exposing the membrane to bath sonication. We also demonstrated that Cu-NP functionalization can be repeated after the Cu-NPs dissolve from the membrane surface. The Cu-NP functionalization had minimal impact on the intrinsic membrane transport parameters. Surface hydrophilicity and surface roughness were also maintained, and the membrane surface charge became positive after functionalization. The functionalized membrane exhibited significant antibacterial activity, leading to an 80-95% reduction in the number of attached live bacteria for three different model bacterial strains. Challenges associated with this functionalization method and its implementation in RO desalination are discussed. © 2013 American Chemical Society.

  6. Study of the role of the interface between niobium films and copper RF resonators

    CERN Document Server

    Benvenuti, Cristoforo; Campisi, I E; Darriulat, Pierre; Peck, M A; Russo, R

    1997-01-01

    Niobium-coated copper resonators are usually produced with an oxide interface between the film and the substrate. This oxide has two sources: the passivation layer inevitably formed on the surface of the cavity after chemical preparation before coating, and the niobium oxide which builds up on the surface of the cathode when it is exposed to air, and is transferred to the cavity surface during coa ting. The oxide layer may influence both the purity and the structural properties of the film, and in turn its RF behaviour. To study its effect, some cavities have been coated with a special two-cath ode sputtering system, allowing for a complete removal of both oxide layers by sputter-etching. For comparison, a few cavities have also been produced with the same coating system without sputter-etch ing, or with a controlled oxidation of the copper surface of the cavity after sputter-etching. Two cavities have also been produced without oxide interface using Kr and Ne as sputter gas instead of Ar .

  7. Co-sputter deposited nickel-copper bimetallic nanoalloy embedded carbon films for electrocatalytic biomarker detection

    Science.gov (United States)

    Shiba, Shunsuke; Kato, Dai; Kamata, Tomoyuki; Niwa, Osamu

    2016-06-01

    We report the fabrication of a nickel (Ni)-copper (Cu) bimetallic nanoalloy (~3 nm) embedded carbon film electrode with the unbalanced magnetron (UBM) co-sputtering technique, which requires only a one-step process at room temperature. Most of each nanoalloy body was firmly embedded in a chemically stable carbon matrix with an atomically flat surface (Ra: 0.21 nm), suppressing the aggregation and/or detachment of the nanoalloy from the electrode surface. The nanoalloy size and composition can be controlled simply by individually controlling the target powers of carbon, Ni and Cu, which also makes it possible to localize the nanoalloys near the electrode surface. This electrode exhibited excellent electrocatalytic activity for d-mannitol, which should be detected with a low detection limit in urine samples for the diagnosis of severe intestinal diseases. With a Ni/Cu ratio of around 64/36, the electrocatalytic current per metal area was 3.4 times larger than that of an alloy film electrode with a similar composition (~70/30). This improved electrocatalytic activity realized higher stability (n = 60, relative standard deviation (RSD): 4.6%) than the alloy film (RSD: 32.2%) as demonstrated by continuous measurements of d-mannitol.We report the fabrication of a nickel (Ni)-copper (Cu) bimetallic nanoalloy (~3 nm) embedded carbon film electrode with the unbalanced magnetron (UBM) co-sputtering technique, which requires only a one-step process at room temperature. Most of each nanoalloy body was firmly embedded in a chemically stable carbon matrix with an atomically flat surface (Ra: 0.21 nm), suppressing the aggregation and/or detachment of the nanoalloy from the electrode surface. The nanoalloy size and composition can be controlled simply by individually controlling the target powers of carbon, Ni and Cu, which also makes it possible to localize the nanoalloys near the electrode surface. This electrode exhibited excellent electrocatalytic activity for d

  8. Femtosecond time-resolved two-photon photoemission study of organic semiconductor copper phthalocyanine film

    International Nuclear Information System (INIS)

    Tanaka, A.; Tohoku University; University of Rochester, NY; Yan, L.; Watkins, N.J.; Gao, Y.

    2004-01-01

    Full text: Organic semiconductors are recently attracting much interest from the viewpoints of both device and fundamental physics. These organic semiconductors are considered to be important constituents of the future devices, such as organic light-emitting diode, organic field effect transistor, and organic solid-state injection laser. In order to elucidate their detailed physical properties and to develop the future devices, it is indispensable to understand their excited-state dynamics as well as their electronic structures. The femtosecond time-resolved two-photon photoemission (TR-2PPE) spectroscopy is attracting much interest because of its capability to observe the energy-resolved excited electron dynamics. In this work, we have carried out a TR-2PPE study of the organic semiconductor copper phthalocyanine (CuPc) film. Furthermore, we have investigated the detailed electronic structure of CuPc film using the photoemission (PES) and inverse photoemission (IPES) spectroscopies. From the simultaneous PES and IPES measurements for CuPc film with a thickness of 100 nm, the lowest unoccupied molecular orbital (LUMO), highest occupied molecular orbital, and ionization potential of CuPc film have been directly determined. The observed two-photon photoemission (2PPE) spectrum of the present CuPc film, measured with photon energy of about hv=3.3 eV, exhibits a broad feature. From the energy diagram of CuPc film determined by the PES and IPES measurements, the intermediate state observed in the present 2PPE spectrum of CuPc film corresponds to the energy region between about 0.4 and 1.7 eV above the LUMO energy. From the time-resolved pump-probe measurements, it is found that the relaxation lifetimes of excited states in the present CuPc films are very short (all below 50 fs) and monotonously become faster with increasing excitation energy. We attribute this extremely fast relaxation process of photoexcitation to a rapid internal conversion process. From these results

  9. Piezoelectric PZT thin films on flexible copper-coated polymer films

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Volkonskiy, O.; Gerlach, G.; Hubička, Zdeněk; Dejneka, Alexandr; Jastrabík, Lubomír; Kiselev, D.; Bdikin, I.; Kholkin, A.

    636/637, - (2010), s. 392-397 ISSN 0255-5476 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KJB100100703 Institutional research plan: CEZ:AV0Z10100522 Keywords : plasma jet deposition * PZT * kapton® film substrate * piezoresponse force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  10. In-situ investigation of the microstructure evolution in nanocrystalline copper electrodeposits at room temperature

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2006-01-01

    The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of x-ray diffraction analysis and simultaneous measurements of the electrical resistivity as a function of time. In situ studies were started immediately after deposition...... growth, crystallographic texture changes by multiple twinning, and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer, the slower the microstructure evolution is......, and self-annealing is suppressed completely for a thin layer with 0.4 µm. The preferred crystallographic orientation of the as-deposited crystallites is suggested to cause the observed thickness dependence of the self-annealing kinetics. ©2006 American Institute of Physics...

  11. Localized etching of an insulator film coated on a copper wire using an atmospheric-pressure microplasma jet.

    Science.gov (United States)

    Yoshiki, Hiroyuki

    2007-04-01

    Atmospheric-pressure microplasma jets (APmicroPJs) of Ar and ArO(2) gases were generated from the tip of a stainless steel surgical needle having outer and inner diameters of 0.4 and 0.2 mm, respectively, with a rf excitation of 13.56 MHz. The steel needle functions both as a powered electrode and a gas nozzle. The operating power is 1.2-6 W and the corresponding peak-to-peak voltage Vp.p. is about 1.5 kV. The APmicroPJ was applied to the localized etching of a polyamide-imide insulator film (thickness of 10 microm) of a copper winding wire of 90 microm diameter. The insulator film around the copper wire was completely removed by the irradiated plasma from a certain direction without fusing the wire. The removal time under the Ar APmicroPJ irradiation was only 3 s at a rf power of 4 W. Fluorescence microscopy and scanning electron microscope images reveal that good selectivity of the insulator film to the copper wire was achieved. In the case of ArO(2) APmicroPJ irradiation with an O(2) concentration of 10% or more, the removed copper surface was converted to copper monoxide CuO.

  12. Localized etching of an insulator film coated on a copper wire using an atmospheric-pressure microplasma jet

    International Nuclear Information System (INIS)

    Yoshiki, Hiroyuki

    2007-01-01

    Atmospheric-pressure microplasma jets (APμPJs) of Ar and Ar/O 2 gases were generated from the tip of a stainless steel surgical needle having outer and inner diameters of 0.4 and 0.2 mm, respectively, with a rf excitation of 13.56 MHz. The steel needle functions both as a powered electrode and a gas nozzle. The operating power is 1.2-6 W and the corresponding peak-to-peak voltage Vp.p. is about 1.5 kV. The APμPJ was applied to the localized etching of a polyamide-imide insulator film (thickness of 10 μm) of a copper winding wire of 90 μm diameter. The insulator film around the copper wire was completely removed by the irradiated plasma from a certain direction without fusing the wire. The removal time under the Ar APμPJ irradiation was only 3 s at a rf power of 4 W. Fluorescence microscopy and scanning electron microscope images reveal that good selectivity of the insulator film to the copper wire was achieved. In the case of Ar/O 2 APμPJ irradiation with an O 2 concentration of 10% or more, the removed copper surface was converted to copper monoxide CuO

  13. Study of copper doping effects on structural, optical and electrical properties of sprayed ZnO thin films

    International Nuclear Information System (INIS)

    Mhamdi, A.; Mimouni, R.; Amlouk, A.; Amlouk, M.; Belgacem, S.

    2014-01-01

    Highlights: • The sprayed Cu-doped ZnO thin layers films were well crystallised in hexagonal wurtzite phase. • Nanoncrystallites on clusters were observed whose density decreases especially at 2% Cu content. • This parallel circuit R–C represents the contribution of the grain boundaries delineating the oriented columnar microcrystallites along c-axis. - Abstract: Copper-doped zinc oxide thin films (ZnO:Cu) at different percentages (1–3%) were deposited on glass substrates using a chemical spray technique. The effect of Cu concentration on the structural, morphology and optical properties of the ZnO:Cu thin films were investigated. XRD analysis revealed that all films consist of single phase ZnO and were well crystallised in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. The Film surface was analyzed by contact atomic force microscopy (AFM) in order to understand the effect of the doping on the surface structure. Doping by copper resulted in a slight decrease in the optical band gap energy of the films and a noticeably change in optical constants. From the spectroscopy impedance analysis we investigated the frequency relaxation phenomenon and the circuit equivalent circuit of such thin layers. Finally, all results have been discussed in terms of the copper doping concentration

  14. Hybrid Solar Cell with TiO2 Film: BBOT Polymer and Copper Phthalocyanine as Sensitizer

    Directory of Open Access Journals (Sweden)

    Saptadip Saha

    2016-01-01

    Full Text Available An organic-inorganic hybrid solar cell was fabricated using Titanium dioxide (TiO2: 2,5-bis(5-tert-butyl-2-benzoxazolyl thiophene (BBOT film and Copper Phthalocyanine (CuPc as a sensitizer. BBOT was used in photodetector in other reported research works, but as per best of our knowledge, it was not implemented in solar cells till date. The blend of TiO2: BBOT blend was used to fabricate the film on ITO-coated glass and further a thin layer of CuPc was coated on the film. This was acted as photoanode and another ITO coated glass with a platinum coating was used as a counter electrode (cathode. An optimal blend of acetonitrile (solvent (50-100%, 1,3-dimethylimidazolium iodide (10-25%, iodine (2.5-10% and lithium iodide, pyridine derivative and thiocyanate was used as electrolytes in the hybrid solar cell. The different structural, optical and electrical characteristics were measured. The Hybrid solar cell showed a maximum conversion efficiency of 6.51%.

  15. Characterization of submonolayer film composed of soft-landed copper nanoclusters on HOPG

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Shyamal, E-mail: shyamal.mondal@saha.ac.in; Das, Pabitra; Chowdhury, Debasree; Bhattacharyya, S. R. [Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata-700 064 (India)

    2015-06-24

    Preformed Copper nanoclusters are deposited on highly oriented pyrolytic graphite (HOPG) at very low energy. For the study of chemical composition X-ray Photoelectron Spectroscopy (XPS) is performed for a wide range of binding energy without exposing the sample in the ambient. Morphological aspects of the supported clusters are characterized employing high resolution scanning electron microscope (SEM). Different types of morphology are observed depending on the nature of the substrate surface. Big fractal islands are formed on terraces while at the step edges small islands are found to form. Ex-situ cathodoluminescence (CL) measurement shows peak at 558 nm wavelength which corresponds to the band gap of 2.22 eV which is due to Cu{sub 2}O nanocrystals formed due to oxidation of the deposited film in ambient.

  16. In situ observations of crack arrest and bridging by nanoscale twins in copper thin films

    International Nuclear Information System (INIS)

    Kim, Seong-Woong; Li Xiaoyan; Gao Huajian; Kumar, Sharvan

    2012-01-01

    In situ tensile experiments in a transmission electron microscope revealed that micro-cracks in ultrafine grained, free-standing, thin copper foils containing nanoscale twins initiated in matrix domains separated by the twins and then arrested at twin boundaries as twin boundary sliding proceeded. The adjacent microcracks eventually coalesced through shear failure of the bridging twins. To investigate the atomic mechanism of this rarely seen nanoscale crack bridging behavior, molecular dynamics simulations were performed to show that during crack propagation twin boundaries are impinged upon by numerous dislocations from the plastically deforming matrix. These dislocations react at the interface and evolve into substantially impenetrable dislocation walls that strongly confine crack nucleation and resist crack propagation, leading to the experimentally observed crack bridging behavior. The present results raise an approach to significantly toughening polycrystalline thin films by incorporating nanoscale twin structures into individual grains that serve as crack bridging ligaments.

  17. Rocking disc electro-deposition of copper films on Mo/MoSe{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cummings, Charles Y.; Frith, Paul E. [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Zoppi, Guillaume; Forbes, Ian [Northumbria Photovoltaics Applications Centre, Northumbria University, NE1 8ST (United Kingdom); Rogers, Keith D. [Cranfield Health, Cranfield University, Shrivenham Campus, Swindon, SN6 8LA (United Kingdom); Lane, David W. [Department of Applied Science, Security and Resilience, Cranfield University, Shrivenham, Swindon, SN6 8LA (United Kingdom); Marken, Frank, E-mail: F.Marken@bath.ac.uk [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

    2011-08-31

    A novel electro-deposition method based on a rocking disc system with {pi}/3 amplitude and variable frequency is introduced. Uniform copper films were deposited from a 0.1 M CuSO{sub 4}/3.0 M NaOH/0.2 M sorbitol bath directly onto 12.1 cm{sup 2} Mo/MoSe{sub 2} substrates with X-ray diffraction showing a thickness variation of {+-}5% over this area. Investigation of the mass transport conditions suggests (i) uniform diffusion over the sample, (ii) a rate of mass transport proportional to the square root of the rocking rate, and (iii) turbulent conditions, which are able to dislodge gas bubbles during electro-deposition.

  18. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mohammed Ali Al-Sammarraie

    2017-01-01

    Full Text Available The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and thermodynamics parameters were established from Tafel plots using three-electrode potentiostat. The deposited films were examined by FTIR, Raman, XRD, SEM, and AFM techniques; they revealed high percentages of conversion to the few layers of graphene with confirmed defects.

  19. Self-annealing in a two-phase Pb-Sn alloy after processing by high-pressure torsion

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Nian Xian [Materials Research Group, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Chinh, Nguyen Q. [Department of Materials Physics, Eötvös Loránd University, 1117 Budapest, Pázmány Péter s. 1/A. (Hungary); Kawasaki, Megumi [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Departments of Aerospace & Mechanical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089-1453 (United States); Huang, Yi, E-mail: Y.Huang@soton.ac.uk [Materials Research Group, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Langdon, Terence G. [Materials Research Group, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Departments of Aerospace & Mechanical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089-1453 (United States)

    2016-06-01

    A Pb-62% Sn two-phase eutectic alloy was processed by high-pressure torsion (HPT) and stored at room temperature (RT) to investigate the occurrence of self-annealing. The microstructural characteristics and mechanical properties were recorded during self-annealing using scanning electron microscopy, tensile testing and nanoindentation. Processing by HPT produces a weakening effect but storage at RT leads to a gradual increase in the hardness together with significant grain growth. Nanoindentation tests were performed by applying both the indentation depth-time (h-t) relationship at the holding stage and the hardness, H, at various loading rates in order to explore the evolution of the strain rate sensitivity (SRS), m. The results obtained by tensile testing and nanoindentation are consistent despite the large difference in the volumes of the examined regions, thereby confirming the validity of using nanoindentation to measure the strain rate sensitivity.

  20. SBA-15 mesoporous silica free-standing thin films containing copper ions bounded via propyl phosphonate units - preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Laskowski, Lukasz, E-mail: lukasz.laskowski@kik.pcz.pl [Czestochowa University of Technology, Institute of Computational Intelligence, Unit of Microelectronics and Nanotechnology, Al. Armii Krajowej 36, 42–201 Czestochowa (Poland); Laskowska, Magdalena, E-mail: magdalena.laskowska@onet.pl [H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-342 Krakow, ul. Radzikowskiego 152 (Poland); Jelonkiewicz, Jerzy, E-mail: jerzy.jelonkiewicz@kik.pcz.pl [Czestochowa University of Technology, Institute of Computational Intelligence, Unit of Microelectronics and Nanotechnology, Al. Armii Krajowej 36, 42–201 Czestochowa (Poland); Dulski, Mateusz, E-mail: mateusz.dulski@us.edu.pl [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Materials Science, Silesian Center for Education and Interdisciplinary Research, ul. 75 Pułku Piechoty 1A, 41–500 Chorzów (Poland); Wojtyniak, Marcin, E-mail: marcin.wojtyniak@us.edu.pl [University of Silesia, Institute of Physics, Silesian Center for Education and Interdisciplinary Research, ul. 75 Pułku Piechoty 1A, 41–500 Chorzów (Poland); Fitta, Magdalena, E-mail: magdalena.fitta@ifj.edu.pl [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, 31–342 Krakow, ul. Radzikowskiego 152 (Poland); Balanda, Maria, E-mail: Maria.Balanda@ifj.edu.pl [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, 31–342 Krakow, ul. Radzikowskiego 152 (Poland)

    2016-09-15

    The SBA-15 silica thin films containing copper ions anchored inside channels via propyl phosphonate groups are investigated. Such materials were prepared in the form of thin films, with hexagonally arranged pores, laying rectilinear to the substrate surface. However, in the case of our thin films, their free standing form allowed for additional research possibilities, that are not obtainable for typical thin films on a substrate. The structural properties of the samples were investigated by X-ray reflectometry, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The molecular structure was examined by Raman spectroscopy supported by numerical simulations. Magnetic measurements (SQUID magnetometry and EPR spectroscopy) showed weak antiferromagnetic interactions between active units inside silica channels. Consequently, the pores arrangement was determined and the process of copper ions anchoring by propyl phosphonate groups was verified in unambiguous way. Moreover, the type of interactions between magnetic atoms was determined. - Highlights: • Functionalized free-standing SBA-15 thin films were synthesized for a first time. • Thin films synthesis procedure was described in details. • Structural properties of the films were thoroughly investigated and presented. • Magnetic properties of the novel material was investigated and presented.

  1. Sol-gel prepared B2O3-SiO2 thin films for protection of copper substrates

    International Nuclear Information System (INIS)

    Gouda, M.; Ahmed, M.S.; Shahin, M.A.

    2000-01-01

    Full text.Borosilicate coating has potential for applications in the field of electronics, e.g., as passivation layers. One of the main difficulties for applying these films by the conventional melting process is the extensive volatilization of B 2 O 3 from the melt. In this work transparent borosilicate films of 2OB 2 O3.8OSiO 2 (in mole %). Prepared by the sole gel method, were applied onto copper substrates by dip-coating technique. The transparency of these films was very sensitive to the humidity of the atmosphere during the coating process. Transparent films were obtained below 20% relative humidity at 20 celsius degree. High temperature oxidation tests, at about 585 celsius degree stream of air, showed that the sol-gel prepared 2OB 2 O 3 .8OSiO 2 thin films are protective coating for copper substrates under fairly severe temperature gradient and oxidizing atmosphere. It was found that the protective action of these films depends on the film thickness

  2. Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

    Science.gov (United States)

    Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

    2018-05-21

    In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

  3. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    International Nuclear Information System (INIS)

    Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

    2011-01-01

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

  4. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N.

    2014-01-01

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films

  5. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    International Nuclear Information System (INIS)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-01-01

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O_2−CF_4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO_2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  6. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gong, Lijun [Research and Development Department, Guangzhou Fastprint Circuit Tech Co., Ltd., Guangzhou 510663 (China); He, Wei, E-mail: heweiz@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Research and Development Department, Guangdong Guanghua Sci-Tech Co., Ltd., Shantou 515000 (China)

    2017-07-31

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O{sub 2}−CF{sub 4} low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO{sub 2} by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  7. Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

    Science.gov (United States)

    Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

    2018-02-02

    Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

  8. Functionalization of super-aligned carbon nanotube film using hydrogen peroxide solution and its application in copper electrodeposition.

    Science.gov (United States)

    Xiong, Lunqiao; Shuai, Jing; Hou, Zecheng; Zhu, Lin; Li, Wenzhen

    2017-07-15

    In order to make super-aligned carbon nanotubes (SACNT) homogeneously spread in electrolytes, a swift and effective method was devised for surface functionalization of SACNT film by ohmic heating using hydrogen peroxide solution. Controllable generation of defects and notable graft of oxygen functional groups on the sidewall of SACNTs were induced as proven by X-ray photoelectron spectroscopy and Raman spectroscopy. Differently from the harsh wet chemical oxidation, the super-aligned morphology and structural integrity of carbon nanotubes in the SACNT film were found to be well preserved by electron microscopy analysis. The functionalized treatment can remove extraneous material contaminating SACNT film and improve its conductivity. The grafting of polar ionizable groups has been proved to effectively eliminate the agglomeration of SACNTs. When the oxidized SACNT film was used as host material for electrodeposition of copper, the composite film of well-bonded SACNTs and Cu was successfully prepared. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules

    International Nuclear Information System (INIS)

    Steinberger, H.; Thumm, W.; Freitag, R.; Moskowitz, P.D.; Chapin, R.

    1994-01-01

    Copper-indium-diselenide (CIS) is a semiconductor compound that can be used to produce thin-film photovoltaic modules. There is on-going research being conducted by various federal agencies and private industries to demonstrate the commercial viability of this material. Because this is a new technology, and because scant information about the health and environmental hazards associated with the use of this material is available, studies have been initiated to characterize the environmental mobility and environmental toxicology of this compound. The objective of these studies is to identify the environmental and health hazards associated with the production, use, and disposal of CIS thin-film photovoltaic modules. The program includes both experimental and theoretical components. Theoretical studies are being undertaken to estimate material flows through the environment for a range of production options as well as use and disposal scenarios. The experimental programs characterize the physical, chemical e.g. leachability and biological parameters e.g. EC 50 in daphnia and algae, and feeding studies in rats

  10. High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

    Science.gov (United States)

    Rajanikant, Ray Jayminkumar

    The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a

  11. Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

    Science.gov (United States)

    Williams, Bryce Arthur

    A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

  12. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    Science.gov (United States)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  13. Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films

    Energy Technology Data Exchange (ETDEWEB)

    Birringer, Ryan P.; Dauskardt, Reinhold H. [Department of Materials Science and Engineering, Stanford University, Durand Building, Stanford, California 94305-4034 (United States); Shaviv, Roey [Novellus Systems Inc., 4000 North First Street, San Jose, California 95134 (United States); Geiss, Roy H.; Read, David T. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2011-08-15

    The effects of electroplating chemistry and dielectric diffusion barrier composition on copper voiding and barrier adhesion are reported. Adhesion was quantified using the four-point bend thin film adhesion technique, and voiding in the Cu films was quantified using scanning electron microscopy. A total of 12 different film stacks were investigated, including three different Cu electroplating chemistries and four different barrier materials (SiN, N-doped SiC, O-doped SiC, and dual-layer SiC). Both plating chemistry and barrier composition have a large effect on interface adhesion and voiding in the Cu film. X-ray photoelectron spectroscopy was used to investigate the segregation of Cu electroplating impurities, such as S and Cl, to the Cu/barrier interface. Secondary ion mass spectrometry was used to quantify oxygen content at the Cu/barrier interface in a subset of samples. This interface oxygen content is correlated with measured adhesion values.

  14. Anodic polarization behavior and film breakdown potential of pure copper in the simulated geological environment containing carbonate

    International Nuclear Information System (INIS)

    Kawasaki, Manabu; Taniguchi, Naoki; Naito, Morimasa

    2009-01-01

    In order to clarify the influence of environmental factors on the corrosion behavior of copper overpacks in oxidizing environment, potentiodynamic and potentiostatic anodic polarization tests were performed in carbonate aqueous solutions at 80degC. As the results, the passivation was promoted and film breakdown was suppressed in higher carbonate concentrations, in lower chloride ion concentrations, and in higher pH conditions. The sulfate ion tended to promote the film breakdown of copper. The effects of the composition of the test solutions on the anodic polarization curve of copper in bentonite/sand mixture were quite smaller than those in simple aqueous solution. By comparison with previous data for lower temperature condition, it was clarified that passivation of copper was promoted in higher temperature condition, but breakdown potential, Eb was independent of temperature. The Eb, was expressed as a function of the ratio of aggressive ion and inhibiting ion such as [Cl - ]/[HCO 3 - ] and [SO 4 2- ]/[HCO 3 - ], and it was confirmed that the Eb was lowered with increasing the ratio. When the ratio exceeds a certain value, the Eb was no longer able to be determined since the anodic polarization curve becomes active dissolution type. The lower limit of Eb in passive type region was estimated to be about -200 mV vs. SCE. The results of potentiostatic tests showed that pitting corrosion or non-uniform corrosion was observed at the potentials over Eb or second current peak potentials in anodic polarization curve. (author)

  15. Construction of wettability gradient surface on copper substrate by controlled hydrolysis of poly(methyl methacrylate–butyl acrylate) films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yong, E-mail: Yong.Z@mail.scut.edu.cn [Guangzhou Panyu Polytechnic, Guangzhou 511483 (China); Cheng, Jiang; Yang, Zhuo-ru [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China)

    2014-10-01

    We report a gradient wettability surface on copper slide prepared by a simple controlled ester group hydrolysis procedure of poly(methyl methacrylate–butyl acrylate) [P (MMA-BA)] films coated on the copper substrate. In the method, sodium hydroxide solutions are selected to prepare surface gradient wettability on P (MMA-BA) films. The P (MMA-BA) copolymers with different MMA contents are first synthesized by a conventional free atom radical solution polymerization method. The transfer of surface chemical composition from the ester group to acid salt is achieved by hydrolysis in NaOH solution. The effects of different concentrations of NaOH solution and reaction times on the physicochemical properties of the resulting surfaces are studied. The field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) results show that the varying concentration along the substrate length is only attributed to the hydrolysis reaction of ester groups. The hydrolysis causes insignificant change on the morphology of the original film on the copper substrate. In addition, it is found that the MMA copolymer content has a significant influence on the concentration of ester groups on the outermost surface and thus important for forming the slope gradients.

  16. Selective tuning of magnetization dynamics damping in Tb- and Nd-doped permalloy ultrathin films by adjacent copper nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dong, E-mail: physzd@yahoo.com [School of Physics Science and Information Engineering, Key Lab. of Communication Science and Technology of Shandong Province, Liaocheng University, Liaocheng 252059 (China); Physics Department, Southeast University, Nanjing 211189 (China); Yue, Jinjin; Jiang, Sheng [Physics Department, Southeast University, Nanjing 211189 (China); Zhai, Ya, E-mail: yazhai@seu.edu.cn [Physics Department, Southeast University, Nanjing 211189 (China); National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China); Du, Jun; Zhai, Hongru [National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-07-05

    The mechanism of angular dependence of ferromagnetic resonance linewidth of dilute Tb and Nd doping in permalloy thin films with various thicknesses of adjacent copper layer are investigated by experimental approach and theoretical fitting by considering the contributions from intrinsic spin-orbit coupling, inhomogeneous broadening and two-magnon scattering. The results show that the damping coefficient α, by intrinsic contribution extracted from ferromagnetic resonance linewidth, increases from 0.0153 to 0.0218 for NiFe–Nd films and from 0.0193 to 0.0261 for NiFe–Tb films resulting from the spin pumping effect at the interface of NiFe–Nd(or Tb)/Cu as the thickness of copper layer increases from 1 nm to 15 nm. The surface magnetic anisotropy constant K{sub 1} is obtained and shows an decreasing trend from positive to negative, which implies that the copper layer could reduce the surface perpendicular anisotropy. The fitting spin mixed conductivity is (2.72 ± 0.18) × 10{sup 15} cm{sup −2} at NiFe–Tb/Cu interface and (2.4 ± 0.2) × 10{sup 15} cm{sup −2} at Cu/NiFe–Nd interface, respectively. - Highlights: • The thickness of Cu buffer layer affects the surface perpendicular anisotropy of FM layer. • The interface roughness could be investigated by using FMR linewidth. • The damping coefficient is enhanced by spin-pumping effect.

  17. Two-step fabrication of nanoporous copper films with tunable morphology for SERS application

    Science.gov (United States)

    Diao, Fangyuan; Xiao, Xinxin; Luo, Bing; Sun, Hui; Ding, Fei; Ci, Lijie; Si, Pengchao

    2018-01-01

    It is important to design and fabricate nanoporous metals (NPMs) with optimized microstructures for specific applications. In this contribution, nanoporous coppers (NPCs) with controllable thicknesses and pore sizes were fabricated via the combination of a co-sputtering of Cu/Ti with a subsequent dealloying process. The effect of dealloying time on porous morphology and the corresponding surface enhanced Raman scattering (SERS) behaviors were systematically investigated. Transmission electron microscopy (TEM) identified the presences of the gaps formed between ligaments and also the nanobumps on the nanoparticle-aggregated ligament surface, which were likely to contribute as the ;hot spots; for electromagnetic enhancement. The optimal NPC film exhibited excellent SERS performance towards Rhodamine 6G (R6G) with a low limiting detection (10-9 M), along with good uniformity and reproducibility. The calculated enhancement factor of ca. 4.71 × 107 was over Au substrates and comparable to Ag systems, promising the proposed NPC as a cheap candidate for high-performance SERS substrate.

  18. Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

    International Nuclear Information System (INIS)

    Abdel Rafea, M; Roushdy, N

    2009-01-01

    Amorphous copper oxide films were deposited using the SILAR technique. Both Cu 2 O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu 2 O is the most probable crystalline phase in the film, while Cu 2 O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu 2 O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.

  19. Effect of Molecular Structure on Modulation of Passivation Films on Copper Chemical Mechanical Planarization

    Science.gov (United States)

    Mlynarski, Amy

    In order to optimize the chemical mechanical planarization (CMP) process, there is a need to further understand the synergistic relationship between chemical and mechanical parameters to enhance the polishing process. CMP chemistry is very complex, as it contains complexing agents, oxidizing agents, passivating agents, and abrasive particles. This variety of components ensues chaos within the system, which complicates the understanding of the direct impact each component has on the CMP process. In order for there to be efficiency in the polishing process, specifically for copper (Cu) polishing, the chemistry must create a softened passivation layer on the Cu surface that is able to be readily removed by applied mechanical abrasion. Focusing on Cu CMP, the oxidation of Cu to Cu2+ needs to be thoroughly understood in order to probe the formation of creating this ideal passivated layer, which protects recessed Cu regions. The type of film that is formed, the strength of the film, and even the efficiency of film removal will be altered depending on the chemistry of interaction at the Cu surface. This thesis focuses on understanding the working mechanism of the film formation on Cu, depending on the passivating agent added to the system. The different passivating agents used, more specifically benzotriazole (BTA), triazole (TAZ), salicylhydroxamic acid (SHA), and benzimidazole (BIA), have all been known to create a light coat of protection on the recessed metal, providing corrosion resistance. In order to study the differences in these films, many different techniques can be utilized to characterize the films, such as electrochemical scans, referred to as Tafel plots, which will be performed to compare the differences of the films. By altering the temperature within the system, the activation energy for each system can also be determined as another way to characterize the density of the passive film formed. Furthermore, the generation of *OH will be monitored since the

  20. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  1. Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization

    Science.gov (United States)

    Savitskii, D. P.; Stanishevskii, Ya. M.

    2018-01-01

    Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10‒20 μm, electrical resistivity ρ = 0.92 Ω cm at T = 300 K, and bang gap E g = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is R a = 2.46 μm.

  2. Synthesis And Characterization of Copper Zinc Tin Sulfide Nanoparticles And Thin Films

    Science.gov (United States)

    Khare, Ankur

    Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ˜1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. CZT(S,Se) solar cells have already reached power conversion efficiencies >10%. One of the ways to improve upon the CZTS power conversion efficiency is by using CZTS quantum dots as the photoactive material, which can potentially achieve efficiencies greater than the present thin film technologies at a fraction of the cost. However, two requirements for quantum-dot solar cells have yet to be demonstrated. First, no report has shown quantum confinement in CZTS nanocrystals. Second, the syntheses to date have not provided a range of nanocrystal sizes, which is necessary not only for fundamental studies but also for multijunction photovoltaic architectures. We resolved these two issues by demonstrating a simple synthesis of CZTS, Cu2SnS3, and alloyed (Cu2SnS3) x(ZnS)y nanocrystals with diameters ranging from 2 to 7 nm from diethyldithiocarbamate complexes. As-synthesized nanocrystals were characterized using high resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and energy dispersive spectroscopy to confirm their phase purity. Nanocrystals of diameter less than 5 nm were found to exhibit a shift in their optical absorption spectra towards higher energy consistent with quantum confinement and previous theoretical predictions. Thin films from CZTS nanocrystals deposited on Mo-coated quartz substrates using drop casting were found to be continuous

  3. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Science.gov (United States)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-07-01

    The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O2sbnd CF4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of Csbnd O, Osbnd Cdbnd O, Cdbnd O and sbnd NO2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  4. CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

    2015-01-01

    In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

  5. Surfactant-assisted synthesis of Ag nanostructures and their self-assembled films on copper and aluminum substrate

    International Nuclear Information System (INIS)

    Zhuo Yujiang; Sun Wendong; Dong Lihong; Chu Ying

    2011-01-01

    In this paper, silver nanostructures with controlled morphologies, such as plates, rods, belts, sheets and their self-assembled films have been prepared on copper and aluminum substrates by a surfactant-assisted colloidal chemical method. The X-ray powder diffraction (XRD) and the selected area electron diffraction (SAED) patterns indicated that the Ag nanostructures grew on the substrates with cubic symmetry and single-crystalline in nature. An oriented attachment with surfactant-assisted mechanism and a cooperative effect of surfactant and chloride ion on the morphology of Ag nanostructures were investigated systematically and synthetically.

  6. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Rodríguez, C.A. [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile); Porcile-Saavedra, P.F. [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Trejo-Cruz, C. [Department of Physics, Faculty of Science, University of Biobío, Avenue Collao 1202, Box 5C, Concepción 4051381 (Chile)

    2016-07-15

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films. - Graphical abstract: “Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution” by M. G. Sandoval-Paz, C. A. Rodríguez, P. F. Porcile-Saavedra, C. Trejo-Cruz. Display Omitted - Highlights: • Copper (I) selenide thin films were obtained by chemical bath deposition. • Orthorhombic to cubic phase change was induced by varying the reaction solution pH. • Orthorhombic phase is obtained mainly from a hydroxides cluster mechanism. • Cubic phase is obtained mainly from an ion by ion mechanism. • Structural, optical and electrical properties are presented as a function of pH.

  7. Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

    Directory of Open Access Journals (Sweden)

    Heberto Gómez-Pozos

    2016-01-01

    Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

  8. Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Canulescu, Stela

    2016-01-01

    The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS...... film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly...

  9. Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications

    KAUST Repository

    Islam, Md. Anisul; Nurani, Sheikh Jaber; Karim, Md. Adnan; Rahman, Abu Sadat Md. Sayem; Abdul Halim, Md. Md. Ansar Ali

    2016-01-01

    concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher

  10. Solid state de-wetting observed for vapor deposited copper films on carbon substrates

    International Nuclear Information System (INIS)

    Schrank, C.; Eisenmenger-Sittner, C.; Neubauer, E.; Bangert, H.; Bergauer, A.

    2004-01-01

    Copper-Carbon composites are a good example for novel materials consisting of components with extremely different physical and chemical properties. They have a high potential for an application as heat sinks for electronic components, but the joining of the two materials is a difficult task. To obtain reasonable mechanical and thermal contact between copper and carbon the following route was chosen. First glassy-carbon substrates were subjected to an RF-Nitrogen plasma treatment. Then 300 nm thick copper coatings were sputter-deposited on the plasma treated surface within the same vacuum chamber. Finally, the samples were removed from the deposition chamber and either investigated immediately or thermally annealed at 850 deg. C under high vacuum conditions (10 -4 Pa). While non-annealed copper-coatings were continuous and showed excellent adhesion values of approximately 700 N/cm 2 , the heat treated samples lose their continuity by a de-wetting process. At the beginning holes are formed, then a labyrinth-like morphology develops and finally the coating consists of isolated droplets. All these processes occur well below the melting temperature of copper and were observed by AFM and SEM. The mechanism of this solid-state de-wetting process is investigated in relation to the recent literature on de-wetting and its consequences on the manufacturing of copper-carbon composites are discussed

  11. Effects of crystallographic texture on stress-migration resistance in copper thin films

    International Nuclear Information System (INIS)

    Koike, J.; Wada, M.; Sanada, M.; Maruyama, K.

    2002-01-01

    The crystallographic texture of heat-treated Cu thin films and its effects on stress-migration resistance were studied as a function of film thickness within a range of 50-900 nm. All as-deposited films had (111) texture. After heat treatment at 723 K, texture transition from (111) to (100) was observed in films of thickness greater than 300 nm. The (111) texture films after heat treatment showed severe stress migration; in contrast, the (100) texture films showed no noticeable stress migration. The observed stress-migration resistance in the (100) texture films can be attributed to the absence of twins and to lower thermal stress as compared with the (111) texture films

  12. Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Luo Xinze [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); College of Chemistry and Biological Science, Yili Normal University, Yining 835000, (China); Xu Lin, E-mail: linxu@nenu.edu.cn [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); Xu Bingbing; Li Fengyan [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China)

    2011-05-15

    Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO{sub 3}){sub 2}, TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 {mu}A cm{sup -2}, a fill factor of 0.26, and a power conversion efficiency of 0.14%.

  13. Morphologies and wetting properties of copper film with 3D porous micro-nano hierarchical structure prepared by electrochemical deposition

    International Nuclear Information System (INIS)

    Wang, Hongbin; Wang, Ning; Hang, Tao; Li, Ming

    2016-01-01

    Highlights: • A 3D porous micro-nano hierarchical structure Cu films were prepared. • The evolution of morphology and wettability with deposition time was reported. • The effects of EDA on the microscopic morphology were revealed. • A high contact angle of 162.1° was measured when deposition time is 5 s. • The mechanism of super-hydrophobicity was illustrated by two classical models. - Abstract: Three-dimensional porous micro-nano hierarchical structure Cu films were prepared by electrochemical deposition with the Hydrogen bubble dynamic template. The morphologies of the deposited films characterized by Scanning Electronic Microscopy (SEM) exhibit a porous micro-nano hierarchical structure, which consists of three levels in different size scales, namely the honeycomb-like microstructure, the dendritic substructure and the nano particles. Besides, the factors which influenced the microscopic morphology were studied, including the deposition time and the additive Ethylene diamine. By measuring the water contact angle, the porous copper films were found to be super-hydrophobic. The maximum of the contact angles could reach as high as 162.1°. An empirical correlation between morphologies and wetting properties was revealed for the first time. The pore diameter increased simultaneously with the deposition time while the contact angle decreased. The mechanism was illustrated by two classical models. Such super-hydrophobic three-dimensional hierarchical micro-nano structure is expected to have practical application in industry.

  14. Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

    International Nuclear Information System (INIS)

    Luo Xinze; Xu Lin; Xu Bingbing; Li Fengyan

    2011-01-01

    Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO 3 ) 2 , TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 μA cm -2 , a fill factor of 0.26, and a power conversion efficiency of 0.14%.

  15. Preparation of Copper Iodide (CuI) Thin Film by In-Situ Spraying and Its Properties

    International Nuclear Information System (INIS)

    Rahmi, G H; Pratiwi, P; Aimon, A H; Winata, T; Iskandar, F; Nuryadi, B W

    2016-01-01

    Perovskite based solar cells have attracted interest as low-cost and high-efficiency solar cells due to their great performance, with efficiency up to 20.1%. One type of hole transport material (HTM) used in perovskite based solar cells is copper iodide (CuI) thin film. CuI is inexpensive and has high mobility compared to other HTMs commonly used in perovskite based solar cells. However, diisopropylsulfide solvent, which is used to dissolve CuI in the preparation process, is a malodorous and toxic compound. Therefore, the objective of this research was to develop a synthesis method for CuI thin film with in-situ spraying, a low- cost, safe and easy fabrication method. As precursor solution, CuSO 45 H 2 O was dissolved in ammonia and KI aqueous solution. The precursor solution was then sprayed directly onto a glass substrate with appropriate temperature to form CuI film. The prepared thin films were characterized by X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscope and four-point probes to study their properties. (paper)

  16. Surface Modification of C17200 Copper-Beryllium Alloy by Plasma Nitriding of Cu-Ti Gradient Film

    Science.gov (United States)

    Zhu, Y. D.; Yan, M. F.; Zhang, Y. X.; Zhang, C. S.

    2018-03-01

    In the present work, a copper-titanium film of gradient composition was firstly fabricated by the dual magnetron sputtering through power control and plasma nitriding of the film was then conducted to modify C17200 Cu alloy. The results showed that the prepared gradient Cu-Ti film by magnetron sputtering was amorphous. After plasma nitriding at 650 °C, crystalline Cu-Ti intermetallics appeared in the multi-phase coating, including CuTi2, Cu3Ti, Cu3Ti2 and CuTi. Moreover, even though the plasma nitriding duration of the gradient Cu-Ti film was only 0.5 h, the mechanical properties of the modified Cu surface were obviously improved, with the surface hardness enhanced to be 417 HV0.01, the wear rate to be 0.32 × 10-14 m3/Nm and the friction coefficient to be 0.075 at the load of 10 N, which are all more excellent than the C17200 Cu alloy. In addition, the wear mechanism also changed from adhesion wear for C17200 Cu substrate to abrasive wear for the modified surface.

  17. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  18. Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

    KAUST Repository

    Pattanasattayavong, Pichaya; Ndjawa, Guy Olivier Ngongang; Zhao, Kui; Chou, Kang Wei; Yaacobi-Gross, Nir; O'Regan, Brian C.; Amassian, Aram; Anthopoulos, Thomas D.

    2013-01-01

    The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

  19. Low cost chemical oxygen demand sensor based on electrodeposited nano-copper film

    Directory of Open Access Journals (Sweden)

    Hamdy H. Hassan

    2018-02-01

    Full Text Available A commercially available copper electrical cable and pure Cu disk were used as substrates for the electrodeposition of copper nanoparticles (nano-Cu. The surface morphology of the prepared nano-Cu/Cu electrodes was investigated by scanning electron microscope (SEM and energy dispersive X-ray spectrometer (EDX. The bare copper substrates and the nano-copper modified electrodes were utilized and optimized for electrochemical assay of chemical oxygen demand (COD using glycine as a standard. A comparison was made among the four electrodes (i.e., bare and nano-Cu coated copper cable and pure copper disk as potential COD sensors. The oxidation behavior of glycine was investigated on the surface of the prepared sensors using linear sweep voltammetry (LSV. The results indicate significant enhancement of the electrochemical oxidation of glycine by the deposited nano-Cu. The effects of different deposition parameters, such as Cu2+ concentration, deposition potential, deposition time, pH, and scan rate on the response of the prepared sensors were investigated. Under optimized conditions, the optimal nano-Cu based COD sensor exhibited a linear range of 2–595 mg/L, lower limit of detection (LOD as low as 1.07 mg/L (S/N = 3. The developed method exhibited high tolerance level to Cl− ion where 1.0 M Cl− exhibited minimal influence. The sensor was utilized for the detection of COD in different real water samples. The results obtained were validated using the standard dichromate method.

  20. Effect of coating current density on the wettability of electrodeposited copper thin film on aluminum substrate

    Directory of Open Access Journals (Sweden)

    Arun Augustin

    2016-09-01

    Full Text Available Copper is the only one solid metal registered by the US Environmental Protection Agency as an antimicrobial touch surface. In touch surface applications, wettability of the surface has high significance. The killing rate of the harmful microbes depends on the wetting of pathogenic solution. Compared to the bulk copper, coated one on aluminum has the advantage of economic competitiveness and the possibility of manufacturing complex shapes. In the present work, the copper coating on the aluminum surface has successfully carried out by electrodeposition using non cyanide alkaline bath. To ensure good adhesion strength, the substrate has been pre-zincated prior to copper deposition. The coating current density is one of the important parameters which determine the nucleation density of the copper on the substrate. To understand the effect of current density on wettability, the coating has done at different current densities in the range of 3 A dm−2 to 9 A dm−2 for fixed time interval. The grain size has been measured from TEM micrographs and showed that as current density increases, grain size reduces from 62 nm to 35 nm. Since the grain size reduces, grain boundary volume has increases. As a result the value of strain energy (calculated by Williamson–Hall method has increased. The density of nodular morphology observed in SEM analysis has been increased with coating current density. Further, wettability studies with respect to double distilled water on the electrodeposited copper coatings which are coated at different current densities are carried out. At higher current density the coating is more wettable by water because at these conditions grain size of the coating decreases and morphology of grain changes to a favorable dense nodularity.

  1. Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination

    Science.gov (United States)

    Guo, Zhenzhen; Ming, Xin; Wang, Gang; Hou, Baofei; Liu, Xinghang; Mei, Tao; Li, Jinhua; Wang, Jianying; Wang, Xianbao

    2018-02-01

    Solar steam technology is one of the simplest, most direct and effective ways to harness solar energy through water evaporation. Here, we report the development using super-hydrophilic copper sulfide (CuS) films with double-layer structures as light absorbers for solar steam generation. In the double-layer structure system, a porous mixed cellulose ester (MCE) membrane is used as a supporting layer, which enables water to get into the CuS light absorbers through a capillary action to provide continuous water during solar steam generation. The super-hydrophilic property of the double-layer system (CuS/MCE) leads to a thinner water film close to the air-water interface where the surface temperature is sufficiently high, leading to more efficient evaporation (˜80 ± 2.5%) under one sun illumination. Furthermore, the evaporation efficiencies still keep a steady value after 15 cycles of testing. The super-hydrophilic CuS film is promising for practical application in water purification and evaporation as a light absorption material.

  2. Wafer-level hermetic vacuum packaging by bonding with a copper-tin thin film sealing ring

    Science.gov (United States)

    Akashi, Teruhisa; Funabashi, Hirofumi; Takagi, Hideki; Omura, Yoshiteru; Hata, Yoshiyuki

    2018-04-01

    A wafer-level hermetic vacuum packaging technology intended for use with MEMS devices was developed based on a copper-tin (CuSn) thin film sealing ring. To allow hermetic packaging, the shear strength of the CuSn thin film bond was improved by optimizing the pretreatment conditions. As a result, an average shear strength of 72.3 MPa was obtained and a cavity that had been hermetically sealed using wafer-level packaging (WLP) maintained its vacuum for 1.84 years. The total pressures in the cavities and the partial pressures of residual gases were directly determined with an ultra-low outgassing residual gas analyzer (RGA) system. Hermeticity was evaluated based on helium leak rates, which were calculated from helium pressures determined with the RGA system. The resulting data showed that a vacuum cavity following 1.84 years storage had a total pressure of 83.1 Pa, contained argon as the main residual gas and exhibited a helium leak rate as low as 1.67  ×  10-17 Pa · m3 s-1, corresponding to an air leak rate of 6.19  ×  10-18 Pa · m3 s-1. The RGA data demonstrate that WLP using a CuSn thin film sealing ring permits ultra-high hermeticity in conjunction with long-term vacuum packaging that is applicable to MEMS devices.

  3. Effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films

    International Nuclear Information System (INIS)

    Pelz, J.; Clarke, J.

    1985-10-01

    Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defect. With an electron dose of about 5 x 10 20 cm -2 , the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added noise was substantially more than in the added resistivity. These result suggest that a large fraction of the added noise may be generated by a small mobile fraction of the added defects that are more readily annealed than the majority of the defects. After a room temperature annealing process, both the noise and resistivity returned nearly to their initial values. The temperature dependence of the noise after irradiation and partial annealing was consistant with the Dutta-Dimon-Horn thermal activation model

  4. The effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films

    International Nuclear Information System (INIS)

    Pelz, J.; Clarke, J.

    1986-01-01

    Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defects. With an electron dose of about 5 x 10 20 cm -2 , the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added noise was substantially more than in the added resistivity. These results suggest that a large fraction of the added noise may be generated by a small mobile fraction of the added defects that are more readily annealed than the majority of the defects. After a room temperature annealing process, both the noise and resistivity returned nearly to their initial values. The temperature dependence of the noise after irradiation and partial annealing was consistent with the Dutta-Dimon-Horn thermal activation model. (Auth.)

  5. Effects of copper concentration on electro-optical and structural properties of chemically deposited nanosized (Zn-Cd)S:Cu films

    International Nuclear Information System (INIS)

    Khare, Ayush

    2010-01-01

    Nanocrystalline (Zn-Cd)S films have been co-deposited on glass slide substrates by chemical bath deposition (CBD) technique at 70 deg. C for 75 min. Electroluminescent (EL), photoluminescent (PL) and structural characteristics of these films doped with Cu have been investigated. Cu doping has significant effects on the growth, structural and optical properties of the deposited (Zn-Cd)S films. EL studies show the essentiality of copper for EL emission. The effect of Cu concentration is examined on XRD, SEM, UV-vis spectroscopy, etc. The morphology of these films investigated with SEM and XRD is used to determine crystalline nature of the films. The optical absorption coefficient of the films has been found to increase with increase in Cu concentration. Voltage and frequency dependence shows the effectiveness of acceleration-collision mechanism. The trap-depth values are calculated from temperature dependence of EL brightness.

  6. Electrodeposited copper oxide films: Effect of bath pH on grain orientation and orientation-dependent interfacial behavior

    International Nuclear Information System (INIS)

    Wang, L.C.; Tacconi, N.R. de; Chenthamarakshan, C.R.; Rajeshwar, K.; Tao, M.

    2007-01-01

    Copper (I) oxide (Cu 2 O) films were cathodically electrodeposited on Sn-doped indium oxide substrates. The influence of electrodeposition bath pH on grain orientation and crystallite shape was carefully re-examined using X-ray diffraction and scanning electron microscopy. In addition to the (100) and (111) preferred orientations identified in two previous sets of studies, as the bath pH was varied in the present study from ∼ 7.5 to ∼ 12, a third preferred orientation, (110), was identified in a narrow pH range, ∼ 9.4 to ∼ 9.9. A remarkable shift in the flat-band potential (spanning ∼ 500 mV) was measured in a non-aqueous electrolyte medium for the various Cu 2 O samples obtained from baths of varying pH

  7. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    International Nuclear Information System (INIS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-01-01

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  8. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2014-11-15

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  9. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    OpenAIRE

    Abdulkareem Mohammed Ali Al-Sammarraie; Mazin Hasan Raheema

    2017-01-01

    The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and therm...

  10. Column study on electrochemical separation of cesium ions from wastewater using copper hexacyanoferrate film

    International Nuclear Information System (INIS)

    Chen, Rongzhi; Tanaka, Hisashi; Asai, Miyuki; Fukushima, Chikako; Kawamoto, Tohru; Kurihara, Masato; Ishizaki, Manabu; Arisaka, Makoto; Nankawa, Takuya; Watanabe, Masayuki

    2013-01-01

    We coated the copper hexacyanoferrate (CuHCF) on the gold electrodes, and then performed the Cs removal by electrochemical separation (ES). The prepared CuHCF nanoparticles can be simply and uniformly coated on electrodes by wet process like conventional printing methods, so any sizes or patterns are feasible at low cost, which indicated the potential as a promising sorption electrode of large size in the columns for sequential removal and recycle of Cs from wastewater. (author)

  11. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Bejšovec, Václav; Vacík, Jiří; Lavrentiev, Vasyl; Vrňata, M.; Kormunda, M.; Daniš, S.

    2016-01-01

    Roč. 389, DEC (2016), s. 751-759 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : Copper oxide * ion beam sputtering * Van der Pauw * nuclear reaction analysis * gas sensing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

  12. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    Energy Technology Data Exchange (ETDEWEB)

    W. M. Roach, D. B. Beringer, J. R. Skuza, W. A. Oliver, C. Clavero, C. E. Reece, R. A. Lukaszew

    2012-06-01

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  13. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    International Nuclear Information System (INIS)

    Roach, W.M.; Beringer, D.B.; Skuza, J.R.; Oliver, W.A.; Clavero, C.; Reece, C.E.; Lukaszew, R.A.

    2012-01-01

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  14. Rapid plasma treatment of polyimide for improved adhesive and durable copper film deposition

    International Nuclear Information System (INIS)

    Usami, Kenji; Ishijima, Tatsuo; Toyoda, Hirotaka

    2012-01-01

    To improve adhesion at the interface between Cupper (Cu) and polyimide (PI) layers, a PI film surface was treated with a microwave-excited plasma. The Ar/N 2 plasma treatment improved the Cu adhesion force to 10 N/cm even for PI substrates with absorbed water. A dramatic improvement of the adhesion durability was achieved by depositing a thin carbon film (C) on the PI substrate as an interlayer between PI and Cu using a microwave plasma followed by treatment with the Ar/N 2 plasma prior to the Cu deposition. After a 20-h accelerated aging test, the reduction of the adhesion force for the resulting Cu/C/PI sample was only 10%, whereas that for the Cu/PI sample was 55%. To gain insight into the film properties, the interface between the Cu and PI film was investigated by X-ray photoelectron spectroscopy.

  15. Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

    2013-01-01

    We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

  16. Nucleation and growth of copper oxide films in MOCVD processes using the β-ketoiminate precursor 4,4'-(1,2-ethanediyldinitrilo)bis(2-pentanonate) copper(II)

    International Nuclear Information System (INIS)

    Condorelli, G.G.; Malandrino, G.; Fragala, I.L.

    1999-01-01

    The MOCVD of CuO has attracted much attention because of its application in high-T c superconducting films and gas sensors. This work focuses on the potential of a β-ketoiminate copper complex as an alternative MOCVD source to β-diketonate complexes. Particular attention has been given to factors such as texturing, roughness, and grain size of the deposit. (orig.)

  17. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    OpenAIRE

    W. M. Roach; D. B. Beringer; J. R. Skuza; W. A. Oliver; C. Clavero; C. E. Reece; R. A. Lukaszew

    2012-01-01

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic stu...

  18. Characterization of copper thin films prepared by metal self-ion beam sputter deposition

    International Nuclear Information System (INIS)

    Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

    1994-01-01

    New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

  19. Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

    International Nuclear Information System (INIS)

    Gosavi, S.R.; Deshpande, N.G.; Gudage, Y.G.; Sharma, Ramphal

    2008-01-01

    Copper selenide (CuSe) thin films are grown onto amorphous glass substrate from an aqueous alkaline medium using solution growth technique (SGT) at room temperature. The preparative parameters were optimized to obtain good quality of thin films. The as-deposited films were characterized for physical, optical and electrical properties. X-ray diffraction (XRD) pattern reveals that the films are polycrystalline in nature. Energy dispersive analysis by X-ray (EDAX) shows formation of stoichiometric CuSe compound. Uniform deposition of CuSe thin films on glass substrate was observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) micrographs. Average grain size was determined to 144.53 ± 10 nm using atomic force microscopy. The band gap was found to be 2.03 eV with direct band-to-band transition. Semi-conducting behaviour was observed from resistivity measurements. Ohmic behaviour was seen from I-V curve with good electrical conductivity

  20. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.

    2014-11-11

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

  1. A contribution to the study of thin films grown on copper; Contribution a l'etude des films minces d'oxydes formes sur le cuivre

    Energy Technology Data Exchange (ETDEWEB)

    Frisby, H [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1957-11-15

    The study of cuprous oxide is mainly centered on very thin films, on their structural relationship with the underlying metal, on the importance of the surface state of the latter and on the influence of small quantities of cupric oxide. The thickness of the films has been measured by anodic reduction, the crystal structure and the surface state have bee n analysed by electron diffraction . The electron diffraction apparatus, of an ancient design, is adjusted for electron beams with 0,0705 Angstrom wave-length. The samples are observed under grazing incidence, the roughness of the surface having a very important effect on the form of the diffraction spots. For instance, round projections elongate the spots on a normal to the surface. The copper surfaces, cut out from single crystal blocks are electropolished in phosphoric acid. Then, the metal displays the copper diffraction diagram but with elongated spats. The surface can be considered flat in an area of a few cells. The electrolytic reduction by Allen's method shows, nevertheless; that such surfaces are already covered with a few layers of oxide molecules. If they are ridden of a protective film developed during the polishing, they are quickly covered in water by an oxide layer that grows in a short time to a thickness of 100 Angstrom. It is made of cuprous oxide in crystals of 25 to 30 Angstrom oriented with good accuracy in relation to a crystal axis of the copper generally, a two-fold axis {lambda}{sub 2}. On etched surfaces, the oxide takes approximately the orientation of the metal crystals. By modifying the experimental conditions, it is possible to obtain cupric oxide or cuprous oxide from anodic oxidation in alkaline baths, or by using oxygen peroxide. The disorientation effect produced by small amounts of CuO among the Cu{sub 2}O lattices can thus be studied. Finally, the orienting effect of the cuprous oxide on the copper was investigated by condensing in vacuo the metal on the oxide. It was observed

  2. Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

    Science.gov (United States)

    Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

    2016-04-13

    Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

  3. Improved Performance of Fluorinated Copper Phthalocyanine Thin Film Transistors Using Para-hexaphenyl as the Inducing Layer

    International Nuclear Information System (INIS)

    Ma Feng; Wang Shi-Rong; Li Xiang-Gao; Yan Dong-Hang

    2011-01-01

    We demonstrate n-type organic thin film transistors (OTFTs) employing copper hexadecafluorophthalocyanine (CuPcF 16 ) as the active layer and para-hexaphenyl (p-6p) as the inducing layer. Compared with the CuPcF 16 -based OTFTs without the p-6p inducing layer, the performance of the CuPcF 16 /p-6p OTFTs is greatly improved. The charge carrier field-effect mobility μ, on-off current ratio I on /I off and threshold voltage V T of the CuPcF 16 /p-6p OTFTs are 0.07 cm 2 /V·s, 1.61 × 10 5 and 6.28 V, respectively, approaching the level of a single crystal device. The improved performance is attributed to the introduction of p-6p to form a highly oriented and continuous film of CuPcF 16 with the molecular π-π stack direction parallel to the substrate. (cross-disciplinary physics and related areas of science and technology)

  4. Increase of the electrical resistance of thin copper film due to 14 MeV neutron irradiation

    International Nuclear Information System (INIS)

    Agrawal, S.K.; Kumar, U.; Nigam, A.K.; Singh, S.P.

    1981-01-01

    The variation in the electrical resistance of thin copper film (500 A 0 thick), grown on the glass slide has been measured with increasing 14 MeV neutron irradiation time. The electrical resistance vs irradiation time curve shows an interesting behaviour after an irradiation of 40 minutes. However, there is a net increase in the electrical resistance with increasing neutron dose. The maximum increase in the observed electrical resistance after an irradiation of 115 mins, is 4.45%. The microstructural studies of irradiated film were made using TEM and TED techniques. The TEM patterns up to an irradiation time of 1.00 hr do not show any appreciable change in the microstructure. The TED patterns also do not show any appreciable change in the diffraction pattern up to an irradiation time of 1.0 hr. But after an irradiation time of 1.5 hrs, two extra rings appear in the TED pattern which disappear with increasing neutron irradiation time

  5. Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

    Science.gov (United States)

    Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

    2018-04-01

    In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

  6. Cuprous oxide thin films prepared by thermal oxidation of copper layer. Morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Karapetyan, Artak, E-mail: karapetyan@cinam.univ-mrs.fr [Aix Marseille Université, CINaM, 13288, Marseille (France); Institute for Physical Research of NAS of Armenia, Ashtarak-2 0203 (Armenia); Reymers, Anna [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Giorgio, Suzanne; Fauquet, Carole [Aix Marseille Université, CINaM, 13288, Marseille (France); Sajti, Laszlo [Laser Zentrum Hannover e.V. Hollerithallee 8, 30419 Hannover (Germany); Nitsche, Serge [Aix Marseille Université, CINaM, 13288, Marseille (France); Nersesyan, Manuk; Gevorgyan, Vladimir [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Marine, Wladimir [Aix Marseille Université, CINaM, 13288, Marseille (France)

    2015-03-15

    Structural and optical characterization of crystalline Cu{sub 2}O thin films obtained by thermal oxidation of Cu films at two different temperatures 800 °C and 900 °C are investigated in this work. X-ray diffraction measurements indicate that synthesized films consist of single Cu{sub 2}O phase without any interstitial phase and show a nano-grain structure. Scanning Electron Microscopy observations indicate that the Cu{sub 2}O films have a micro-scale roughness whereas High Resolution Transmission Electron Microscopy highlights that the nanocrystalline structure is formed by superposition of nearly spherical nanocrystals smaller than 30 nm. Photoluminescence spectra of these films exhibit at room temperature two well-resolved emission peaks at 1.34 eV due to defects energy levels and at 1.97 eV due to phonon-assisted recombination of the 1s orthoexciton in both film series. Emission characteristics depending on the laser power is deeply investigated to determine the origin of recorded emissions. Time-integrated spectra of the 1s orthoexciton emission reveals the presence of oxygen defects below the conduction band edge under non-resonant two-photon excitation using a wide range of excitations wavelengths. Optical absorption coefficients at room temperature are obtained from an accurate analysis of their transmission and reflection spectra, whereas the optical band gap energy is estimated at about 2.11 eV. Results obtained are of high relevance especially for potential applications in semiconductor devices such as solar cells, optical sources and detectors. - Highlights: • Nanostructured Cu{sub 2}O thin films were synthesized by thermal oxidation of Cu films. • The PL spectra of nanostructured thin films revealed two well-resolved emission peaks. • The PL properties were investigated under a broad range of experimental conditions. • Inter-band transition in the infrared range has been associated to V{sub Cu} and V{sub O} vacancies. • Absorption

  7. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    International Nuclear Information System (INIS)

    Sahin, Bünyamin; Kaya, Tolga

    2016-01-01

    Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  8. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    Energy Technology Data Exchange (ETDEWEB)

    Sahin, Bünyamin, E-mail: sahin38@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, 31034 (Turkey); School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Kaya, Tolga [School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, 48859 (United States)

    2016-01-30

    Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  9. Surface structure deduced differences of copper foil and film for graphene CVD growth

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Junjun [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Hu, Baoshan, E-mail: hubaoshan@cqu.edu.cn [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Wei, Zidong; Jin, Yan [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Luo, Zhengtang [Department of Chemical and Biomolecular Engineering, The Hongkong University of Science and Technology, Kowloon (Hong Kong); Xia, Meirong [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Pan, Qingjiang [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080 (China); Liu, Yunling [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China)

    2014-05-01

    Highlights: • We demonstrate the significant differences between Cu foil and film in the surface morphology and crystal orientation distribution. • The different surface structure leads to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. • Nucleation densities and growth rate differences at the initial growth stages on the Cu foil and film were investigated and discussed. Abstract: Graphene was synthesized on Cu foil and film by atmospheric pressure chemical vapor deposition (CVD) with CH₄ as carbon source. Electron backscattered scattering diffraction (EBSD) characterization demonstrates that the Cu foil surface after the H₂-assisted pre-annealing was almost composed of Cu(1 0 0) crystal facet with larger grain size of ~100 μm; meanwhile, the Cu film surface involved a variety of crystal facets of Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0), with the relatively small grain size of ~10 μm. The different surface structure led to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. Further data demonstrate that the Cu foil enabled more nucleation densities and faster growth rates at the initial growth stages than the Cu film. Our results are beneficial for understanding the relationship between the metal surface structure and graphene CVD growth.

  10. Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

    Science.gov (United States)

    Zhao, Xu-Wen; Gao, Guan-Yin; Yan, Jian-Min; Chen, Lei; Xu, Meng; Zhao, Wei-Yao; Xu, Zhi-Xue; Guo, Lei; Liu, Yu-Kuai; Li, Xiao-Guang; Wang, Yu; Zheng, Ren-Kui

    2018-05-01

    Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln =Bi and lanthanides, Ch =S , Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T ≥ 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs-type copper oxyselenide thin films of B i0.94P b0.06CuSeO (BPCSO) with perovskite-type ferroelectric Pb (M g1 /3N b2 /3 ) O3-PbTi O3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami-Larkin-Nagaoka theory, we demonstrate two-dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier-density-related 2D electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films.

  11. Superhydrophobic Cu{sub 2}S@Cu{sub 2}O film on copper surface fabricated by a facile chemical bath deposition method and its application in oil-water separation

    Energy Technology Data Exchange (ETDEWEB)

    Pi, Pihui, E-mail: phpi@scut.edu.cn; Hou, Kun; Zhou, Cailong; Li, Guidong; Wen, Xiufang; Xu, Shouping; Cheng, Jiang; Wang, Shuangfeng

    2017-02-28

    Highlights: • A superhydrophobic film with macro/nano structure was fabricated on copper surface. • The as-prepared film shows outstanding water repellency and long-term storage stability. • The same method was used to fabricate superhydrophobic/superoleophilic copper mesh. • The obtained mesh could realize separation of various oily sewages with separation efficiency above 94%. - Abstract: Cu{sub 2}S and Cu{sub 2}O composite (Cu{sub 2}S@Cu{sub 2}O) film with micro/nano binary structure was created on copper surface using the mixing solution of sodium thiosulphate and copper sulfate by a facile chemical bath deposition method. After modification with low-cost polydimethylsioxane (PDMS), the superhydrophobic Cu{sub 2}S@Cu{sub 2}O film was obtained. The as-prepared film shows outstanding water repellency with a water contact angle larger than 150° and long-term storage stability. The geometric morphology and chemical composition of the film were characterized by scanning electron microscope (SEM), energy dispersive spectrometer (EDS) and attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), respectively. Moreover, the same method was used to fabricate superhydrophobic/superoleophilic copper mesh, and it could realize separation of various oily sewages with separation efficiency above 94%. This strategy has potential to fabricate the practical superhydrophobic Cu{sub 2}S@Cu{sub 2}O film on copper surface on a large scale due to its simplicity and low cost.

  12. Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

    Science.gov (United States)

    Loranca-Ramos, F. E.; Diliegros-Godines, C. J.; Silva González, R.; Pal, Mou

    2018-01-01

    Copper antimony sulfide (CAS) has been proposed as low toxicity and earth abundant absorber materials for thin film photovoltaics due to their suitable optical band gap, high absorption coefficient and p-type electrical conductivity. The present work reports the formation of copper antimony sulfide by chemical bath deposition using sodium citrate as a complexing agent. We show that by tuning the annealing condition, one can obtain either chalcostibite or tetrahedrite phase. However, the main challenge was co-deposition of copper and antimony as ternary sulfides from a single chemical bath due to the distinct chemical behavior of these metals. The as-deposited films were subjected to several trials of thermal treatment using different temperatures and time to find the optimized annealing condition. The films were characterized by different techniques including Raman spectroscopy, X-ray diffraction (XRD), profilometer, scanning electron microscopy (SEM), UV-vis spectrophotometer, and Hall Effect measurements. The results show that the formation of chalcostibite and tetrahedrite phases is highly sensitive to annealing conditions. The electrical properties obtained for the chalcostibite films varied as the annealing temperature increases from 280 to 350 °C: hole concentration (n) = 1017-1018 cm-3, resistivity (ρ) = 1.74-2.14 Ωcm and carrier mobility (μ) = 4.7-9.26 cm2/Vseg. While for the tetrahedrite films, the electrical properties were n = 5 × 1019 cm-3, μ = 18.24 cm2/Vseg, and ρ = 5.8 × 10-3 Ωcm. A possible mechanism for the formation of ternary copper antimony sulfide has also been proposed.

  13. Fabrication of hollow-sphere films of wurtzite CuInS{sub 2} on copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Shuijin, E-mail: shjlei@ncu.edu.cn [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Wang, Chunying [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Huang, Qiang [School of Electromechanical Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Liu, Lei; Ge, Yang; Tang, Qingliu; Cheng, Baochang; Xiao, Yanhe; Zhou, Lang [School of Materials Science and Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China)

    2013-12-16

    As important semiconductors, I–III–VI{sub 2} compounds have attracted wide attention, among which the wurtzite structured CuInS{sub 2} has been the research focus due to its metastable phase. In this paper, the wurtzite CuInS{sub 2} hollow-sphere films have been successfully prepared on copper substrate in a self-designed solvothermal detached system. The films of Cu(OH){sub 2} one-dimensional nanostructure arrays and thioacetamide were used as the precursors and triethylene glycol was used as the solvent. Experiments showed that the amount of indium trichloride played a determinative role in the final morphology of the products. Meanwhile, the one-dimensional nanostructure arrays and the detached solvothermal system have great influences on the crystal shape as well. Based on the experimental results, a possible formation mechanism for the CuInS{sub 2} hollow spheres was also proposed. The UV–Vis absorption spectrum showed a broad absorption over the entire visible light and extending into the near-infrared region and presented the band gap of 1.53 eV for the as-prepared wurtzite CuInS{sub 2}, which indicates the potential applications in solar cells. - Highlights: • A self-designed detached system along with solvothermal treatment was developed. • Wurtzite CuInS{sub 2} hollow-sphere films were successfully fabricated on Cu substrate. • The detached system and InCl{sub 3} usage were crucial for the hollow spheres. • The broadband absorption and 1.53 eV band-gap indicates its potentials in PV.

  14. Non-toxic and environmentally friendly route for preparation of copper indium sulfide based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sankir, Nurdan Demirci, E-mail: nsankir@etu.edu.tr; Aydin, Erkan; Ugur, Esma; Sankir, Mehmet

    2015-08-15

    Highlights: • Substrate structure of spray pyrolyzed CuInS{sub 2}/In{sub 2}S{sub 3} heterojunction solar cells. • Low cost and environmentally friendly fabrication of CuInS{sub 2} based solar cells. • Low RF power deposition of TCO layer. • AZO–Ag–AZO sandwich structure. • Effect of the thickness of buffer layer on the photovoltaic performance. - Abstract: In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO was studied as a function of the In{sub 2}S{sub 3} buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 10{sup 6} times. Electrical measurements under illumination revealed that short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), fill factor (FF) and efficiency (η) of the Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO type solar cells increased with increasing the thickness of the In{sub 2}S{sub 3} layer. The maximum J{sub sc} of 9.20 mA/cm{sup 2}, V{sub oc} of 0.43 V, FF of 0.44 have been observed for the 0.94 μm-thick In{sub 2}S{sub 3} layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed

  15. Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Shi-Yi Zhuo

    2012-03-01

    Full Text Available This paper reports the origin of ferromagnetism in Cu-doped ZnO thin films. Room-temperature ferromagnetism is obtained in all the thin films when deposited at different oxygen partial pressure. An obviously enhanced peak corresponding to zinc vacancy is observed in the photoluminescence spectra, while the electrical spin resonance measurement implies the zinc vacancy is negative charged. After excluding the possibility of direct exchange mechanisms (via free carriers, we tentatively propose a quasi-indirect exchange model (via ionized zinc vacancy for Cu-doped ZnO system.

  16. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    Science.gov (United States)

    Sahin, Bünyamin; Kaya, Tolga

    2016-01-01

    In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current-voltage (I-V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  17. Barrier capability of Zr-N films with titanium addition against copper diffusion

    International Nuclear Information System (INIS)

    Wang Ying; Cao Fei; Yang Xiaodong; Ding Minghui

    2009-01-01

    Zr-Ti-N film prepared by sputtering deposition has been employed as a potential diffusion barrier for Cu metallization. It is thought that the existing states of Ti and Zr in the films are Ti-N and Zr-N phase in Zr-Ti-N films. Material analysis by XRD, XPS and sheet resistance measurement reveal that the failure of Zr-N film is mainly due to the formation of Cu 3 Si precipitates at the Zr-N/Si interface by Cu diffusion through the grain boundaries or local defects of the Zr-N barrier layer into Si substrate. In conjunction with sheet resistance measurement, XRD and XPS analyses, the Cu/Zr-Ti-N/Si contact system has high thermal stability at least up to 700 deg. C. The incorporation of Ti atoms into Zr-N barrier layer was shown to be beneficial in improving the thermal stability of the Cu/barrier/Si contact system.

  18. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    Directory of Open Access Journals (Sweden)

    W. M. Roach

    2012-06-01

    Full Text Available Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  19. Nano-sized copper tungstate thin films as positive electrodes for rechargeable Li batteries

    International Nuclear Information System (INIS)

    Li Chilin; Fu Zhengwen

    2008-01-01

    Nano-sized CuWO 4 thin films have been fabricated by radio-frequency (R.F.) sputtering deposition, and are used as positive electrode with both LiClO 4 liquid electrolyte and LiPON solid electrolyte in rechargeable lithium batteries. An initial discharge capacity of 192 and 210 mAh/g is obtainable for CuWO 4 film electrode with and without coated LiPON in liquid electrolyte, respectively. An all-solid-state cell with Li/LiPON/CuWO 4 layers shows a high-volume rate capacity of 145 μAh/cm 2 μm in first discharge, and overcomes the unfavorable electrochemical degradation observed in liquid electrolyte system. A two-step reactive mechanism is investigated by both transmission electron microscopy and selected area electron diffraction techniques. Apart from the extrusion and injection of Cu 2+ /Cu 0 , additional capacity can be achieved by the reversible reactivity of (WO 4 ) 2- framework. The chemical diffusion coefficients of Li intercalation/deintercalation are estimated by cyclic voltammetry. Nano-CuWO 4 thin film is expected to be a promising positive electrode material for high-performance rechargeable thin-film lithium batteries

  20. Anti-corrosion film formed on HAl77-2 copper alloy surface by aliphatic polyamine in 3 wt.% NaCl solution

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yinzhe; Yang, Dong; Zhang, Daquan, E-mail: zhdq@sh163.net; Wang, Yizhen; Gao, Lixin

    2017-01-15

    Highlights: • Properties of ADDD meet environment-friendly requirements. • ADDD’s inhibition efficiency is better than BTA at the low concentration. • ADDD adsorbs on the copper alloy surface by via the N atom in its amino group using flat mode. - Abstract: The corrosion inhibition of a polyamine compound, N-(4-amino-2, 3-dimethylbutyl)-2, 3-dimethylbutane-1, 4-diamine (ADDD), was investigated for HAl77-2 copper alloy in 3 wt.% NaCl solution. Electrochemical measurements, scanning electron microscopy (SEM), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FT-IR) techniques were employed for this research. The results show that ADDD strongly suppresses the corrosion of HAl77-2 alloy. The inhibition efficiency of ADDD is 98.6% at 0.5 mM, which is better than benzotriazole (BTAH) at the same concentration. Polarization curves indicate that ADDD is an anodic type inhibitor. Surface analysis suggests that a protective film is formed via the interaction of ADDD and copper. FT-IR reveals that the inhibition mechanism of ADDD is dominated by chemisorption onto the copper alloy surface to form an inhibition film. Furthermore, quantum chemical calculation and molecular dynamics (MD) simulations methods show that ADDD adsorbs on HAl77-2 surface via amino group in its molecule.

  1. Laser direct writing of thin-film copper structures as a modification of lithographic processes

    International Nuclear Information System (INIS)

    Meyer, F; Ostendorf, A; Stute, U

    2007-01-01

    This paper presents a flexible, mask-free and efficient technique for UV-laser micropatterning of photosensitive resist by laser direct writing (LDW). Photo resist spun on gold sputtered silicon wafers has been laser structured by a scanner guided 266nm DPSSL and electroplated. Ablation behaviour and optimum seed layer preparation in relation to parameters like pulse energy, scanning speed and number of scanned cycles and the electroplating results are discussed. The resulting adhesive strength was measured by a μ-sear device and the gold seed layer-plated copper interface investigated by SEM and EDX to explain correlation to identified bonding behaviour. Improved adhesive strength was observed with higher laser pulse energy and reduced number of cycle

  2. Diffusion and segregation of substrate copper in electrodeposited Ni-Fe thin films

    International Nuclear Information System (INIS)

    Ahadian, M.M.; Iraji zad, A.; Nouri, E.; Ranjbar, M.; Dolati, A.

    2007-01-01

    The Cu surface segregation is investigated in the electrodeposited Ni-Fe layers using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM). The results indicate that Cu segregation and accumulation take place in areated and deareated baths and the amount of segregated copper increases after air exposure. This phenomenon is explained by lower interfacial tension of the Cu in comparison with Ni and Fe. Our results reveal more surface segregation in the electrodeposit than vacuum reported results. This should be due to interface charging and higher surface diffusion in applied potential. The effect of interface charging on the interfacial tension is discussed based on Lippmann equation. Increasing of the Cu accumulation after air exposure is related to selective oxidation in alloys and higher tendency of Cu to surface oxidation

  3. Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

    Energy Technology Data Exchange (ETDEWEB)

    Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

    2015-09-05

    Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

  4. Uniform hexagonal graphene flakes and films grown on liquid copper surface

    OpenAIRE

    Geng, Dechao; Wu, Bin; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Jiang, Lang; Hu, Wenping; Liu, Yunqi

    2012-01-01

    Unresolved problems associated with the production of graphene materials include the need for greater control over layer number, crystallinity, size, edge structure and spatial orientation, and a better understanding of the underlying mechanisms. Here we report a chemical vapor deposition approach that allows the direct synthesis of uniform single-layered, large-size (up to 10,000 μm2), spatially self-aligned, and single-crystalline hexagonal graphene flakes (HGFs) and their continuous films ...

  5. Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

    Science.gov (United States)

    Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

    2018-03-01

    Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

  6. Transport Measurements on NEODYMIUM(1.85) CERIUM(.15) Copper OXYGEN(4-DELTA) Thin Films

    Science.gov (United States)

    Kussmaul, Andreas

    1992-01-01

    This work describes the synthesis and the study of the transport properties of thin films of Nd _{1.85}Ce_{.15 }CuO_{4-delta} carried out respectively at the IBM T. J. Watson Research Center in collaboration with Dr. A. Gupta, and at the Francis Bitter National Magnet Laboratory under the direction of Dr. P. M. Tedrow. The thin films were prepared by laser ablation of a stoichiometric target on heated substrates in a reactive ambient. The influence of the deposition parameters was studied, and the use of a nitreous oxide ambient was found to yield a clear improvement of the sample quality. The transport properties of the films were measured at low temperatures and in high magnetic fields. Non superconducting samples showed a strong, highly anisotropic, negative magnetoresistance that is consistent with two dimensional weak-localization. Superconducting samples show two dimensional fluctuation effects above T_{c}. The theory of fluctuations in a magnetic field was used to extract the position of H_{c2} (in the perpendicular direction) in the broad and almost featureless resistive transition, and the extracted values were fit to the theory of dirty superconductors. The angular dependence of the resistive transition was studied close to T _{c} and found to be somewhat better described by a two-dimensional model. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.).

  7. Copper Nanowires and Their Applications for Flexible, Transparent Conducting Films: A Review

    Directory of Open Access Journals (Sweden)

    Vu Binh Nam

    2016-03-01

    Full Text Available Cu nanowires (NWs are attracting considerable attention as alternatives to Ag NWs for next-generation transparent conductors, replacing indium tin oxide (ITO and micro metal grids. Cu NWs hold great promise for low-cost fabrication via a solution-processed route and show preponderant optical, electrical, and mechanical properties. In this study, we report a summary of recent advances in research on Cu NWs, covering the optoelectronic properties, synthesis routes, deposition methods to fabricate flexible transparent conducting films, and their potential applications. This review also examines the approaches on protecting Cu NWs from oxidation in air environments.

  8. Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth

    Science.gov (United States)

    2016-02-01

    of each sample after annealing . Transene brand APS-100 etchant is used to completely wet etch away the unmasked portion of the Cu-Ni alloy, and...morphological changes in the metal surfaces such as roughness, grain size, and crystal orientation due to the effects of annealing temperature, hydrogen...post- annealed at 1000 °C for 30 min, 40% H2, 15 Torr.............5 Fig. 6 AFM imaging of Cu:Ni alloyed films with ratios of a) 6:1 , b) 4:1, and c) 3

  9. Domain configurations and hysteresis behaviors of ultrathin cobalt film deposited on copper surface

    International Nuclear Information System (INIS)

    Chan, Y.-L.; Jih, N.-Y.; Peng, C.-W.; Chuang, C.-H.; Lee, T.H.; Huang, J.C.A.; Hsu, Y.J.; Wei, D.H.

    2007-01-01

    Depositing additional Cu layer on top of a Co thin film changes the magnetic properties of buried layer significantly. Employing in situ magneto-optical Kerr effect (MOKE) to assess the magnetization behavior of uncovered and covered Co layer grown on Cu (0 0 1), the hysteresis loops give averaged, macroscopic response of the layered system. The microscopic information was examined through element-specific domain images acquired by the X-ray photoemission electron microscope (PEEM). Based on the image analysis, evidence of magnetization switching in some regions of the as-deposited Co layer upon capping 1 ML of Cu was found

  10. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical–chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-02-16

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20–25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical–chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg–Cu alloy layer with occasional intrusion of Mg–Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  11. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-04-01

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20-25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical-chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg-Cu alloy layer with occasional intrusion of Mg-Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  12. Chemical stability of nonwetting, low adhesion self-assembled monolayer films formed by perfluoroalkylsilanization of copper.

    Science.gov (United States)

    Hoque, E; DeRose, J A; Hoffmann, P; Bhushan, B; Mathieu, H J

    2007-03-21

    A self-assembled monolayer (SAM) has been produced by reaction of 1H,1H,2H,2H-perfluorodecyldimethylchlorosilane (PFMS) with an oxidized copper (Cu) substrate and investigated by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), friction force microscopy (FFM), a derivative of AFM, and contact angle measurement. FFM showed a significant reduction in the adhesive force and friction coefficient of PFMS modified Cu (PFMS/Cu) compared to unmodified Cu. The perfluoroalkyl SAM on Cu is found to be extremely hydrophobic, yielding sessile drop static contact angles of more than 130 degrees for pure water and a "surface energy" (which is proportional to the Zisman critical surface tension for a Cu surface with 0 rms roughness) of 14.5 mJm2(nMm). Treatment by exposure to harsh conditions showed that PFMS/Cu SAM can withstand boiling nitric acid (pH=1.8), boiling water, and warm sodium hydroxide (pH=12, 60 degrees C) solutions for at least 30 min. Furthermore, no SAM degradation was observed when PFMS/Cu was exposed to warm nitric acid solution for up to 70 min at 60 degrees C or 50 min at 80 degrees C. Extremely hydrophobic (low surface energy) and stable PFMS/Cu SAMs could be useful as corrosion inhibitors in micro/nanoelectronic devices and/or as promoters for antiwetting, low adhesion surfaces or dropwise condensation on heat exchange surfaces.

  13. Chemical stability of nonwetting, low adhesion self-assembled monolayer films formed by perfluoroalkylsilanization of copper

    International Nuclear Information System (INIS)

    Hoque, E.; DeRose, J. A.; Hoffmann, P.; Bhushan, B.; Mathieu, H. J.

    2007-01-01

    A self-assembled monolayer (SAM) has been produced by reaction of 1H,1H,2H,2H-perfluorodecyldimethylchlorosilane (PFMS) with an oxidized copper (Cu) substrate and investigated by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), friction force microscopy (FFM), a derivative of AFM, and contact angle measurement. FFM showed a significant reduction in the adhesive force and friction coefficient of PFMS modified Cu (PFMS/Cu) compared to unmodified Cu. The perfluoroalkyl SAM on Cu is found to be extremely hydrophobic, yielding sessile drop static contact angles of more than 130 degree sign for pure water and a 'surface energy' (which is proportional to the Zisman critical surface tension for a Cu surface with 0 rms roughness) of 14.5 mJ/m 2 (nM/m). Treatment by exposure to harsh conditions showed that PFMS/Cu SAM can withstand boiling nitric acid (pH=1.8), boiling water, and warm sodium hydroxide (pH=12, 60 degree sign C) solutions for at least 30 min. Furthermore, no SAM degradation was observed when PFMS/Cu was exposed to warm nitric acid solution for up to 70 min at 60 degree sign C or 50 min at 80 degree sign C. Extremely hydrophobic (low surface energy) and stable PFMS/Cu SAMs could be useful as corrosion inhibitors in micro/nanoelectronic devices and/or as promoters for antiwetting, low adhesion surfaces or dropwise condensation on heat exchange surfaces

  14. Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.

  15. Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices

    Science.gov (United States)

    K, Deepak; Roy, Amit; Anjaneyulu, P.; Kandaiah, Sakthivel; Pinjare, Sampatrao L.

    2017-10-01

    The charge transport mechanism in copper ions containing 1,3,5-Triazine-2,4,6-trithiolate (CuTCA) based polymer device in sandwich (Ag/CuTCA/Cu) geometry is studied. The current-voltage (I-V) characteristics of the metallopolymer CuTCA device have shown a transition in the charge transport mechanism from Ohmic to Space-charge limited conduction when temperature and voltage are varied. The carriers in CuTCA devices exhibit hopping transport, in which carriers hop from one site to the other. The hole mobility in this polymer device is found to be dependent on electric field E ( μpα√{E } ) and temperature, which suggests that the polymer has inherent disorder. The electric-field coefficient γ and zero-field mobility μ0 are temperature dependent. The values of mobility and activation energies are estimated from temperature (90-140 K) dependent charge transport studies and found to be in the range of 1 × 10-11-8 × 10-12 m2/(V s) and 16.5 meV, respectively. Temperature dependent electric-field coefficient γ is in the order of 17.8 × 10-4 (m/V)1/2, and the value of zero-field mobility μ0 is in the order of 1.2 × 10-11 m2/(V s) at 140 K. A constant phase element (Q) is used to model the device parameters, which are extracted using the Impedance spectroscopy technique. The bandgap of the polymer is estimated to be 2.6 eV from UV-Vis reflectance spectra.

  16. Phase and Texture of Solution-Processed Copper Phthalocyanine Thin Films Investigated by Two-Dimensional Grazing Incidence X-Ray Diffraction

    Directory of Open Access Journals (Sweden)

    Lulu Deng

    2011-07-01

    Full Text Available The phase and texture of a newly developed solution-processed copper phthalocyanine (CuPc thin film have been investigated by two-dimensional grazing incidence X-ray diffraction. The results show that it has β phase crystalline structure, with crystallinity greater than 80%. The average size of the crystallites is found to be about 24 nm. There are two different arrangements of crystallites, with one dominating the diffraction pattern. Both of them have preferred orientation along the thin film normal. Based on the similarities to the vacuum deposited CuPc thin films, the new solution processing method is verified to offer a good alternative to vacuum process, for the fabrication of low cost small molecule based organic photovoltaics.

  17. Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

    2015-12-30

    Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

  18. Uniform hexagonal graphene flakes and films grown on liquid copper surface.

    Science.gov (United States)

    Geng, Dechao; Wu, Bin; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Jiang, Lang; Hu, Wenping; Liu, Yunqi

    2012-05-22

    Unresolved problems associated with the production of graphene materials include the need for greater control over layer number, crystallinity, size, edge structure and spatial orientation, and a better understanding of the underlying mechanisms. Here we report a chemical vapor deposition approach that allows the direct synthesis of uniform single-layered, large-size (up to 10,000 μm(2)), spatially self-aligned, and single-crystalline hexagonal graphene flakes (HGFs) and their continuous films on liquid Cu surfaces. Employing a liquid Cu surface completely eliminates the grain boundaries in solid polycrystalline Cu, resulting in a uniform nucleation distribution and low graphene nucleation density, but also enables self-assembly of HGFs into compact and ordered structures. These HGFs show an average two-dimensional resistivity of 609 ± 200 Ω and saturation current density of 0.96 ± 0.15 mA/μm, demonstrating their good conductivity and capability for carrying high current density.

  19. The direct determination, by differential pulse anodic-stripping voltammetry at the thin mercury-film electrode, of cadmium, lead and copper

    International Nuclear Information System (INIS)

    Lee, A.F.

    1981-01-01

    This report describes the development and application of a voltammetric procedure for the direct, simultaneous determination of cadmium, lead, and copper in three SAROC reference materials (carbonatite, magnesite, and quartz). The electrolyte was a mixture of 1 M ammonium chloride, 0,1 M citric acid, and 0,025 M ascorbic acid. No interferences were encountered from Fe(III), As(III), Sb(V), Tl(I), or In(III) at the concentrations present in the samples. Intermetallic interferences were eliminated by the use of thin mercury-film electrodes not less than 80nm thick. Limits of detection were determined by the degree to which the supporting electrolyte could be purified, and were estimated to be 10ng/g, 250ng/g, and 150ng/g for cadmium, lead, and copper respectively

  20. Fabrication of Copper Nanowire Films and their Incorporation into Polymer Matrices for Antibacterial and Marine Antifouling Applications

    NARCIS (Netherlands)

    Jiang, S.; Sreethawong, T.; Siew Chen Lee, S.; Bee Jin Low, M.; Yin Win, BrzozowskaK.; Brzozowska, A.M.; Lay Ming Teo, S.; Vancso, Gyula J.; Janczewski, D.; Han, M-Y

    2015-01-01

    With the ban of tributyltin, copper-based biocides are now widely used in antifouling coatings as the major active ingredients. Given the past experience of heavy-metal accumulation in harbors with limited water exchange, there is a significant interest in developing copper materials that greatly

  1. STRUCTURAL, PHOTO-FUNCTIONAL AND SEMICONDUCTOR PROPERTIES OF COPPER OXIDE THIN FILMS PREPARED BY DC REACTIVE METHOD UNDER VARIOUS THICKNESSES Anmar H. Shukur

    Directory of Open Access Journals (Sweden)

    Anmar H. Shukur

    2018-01-01

    Full Text Available Cuprous oxide (Cu2O has been formed on glass substrates by dc reactive magnetron sputtering method, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas was used to form these films. Under vacuum chamber pressure of 1.2×10-5 Pa, thin film thickness was changed from 100 nm to 300 nm while other deposition parameters were fixed. The influence of changing the thickness of thin films on the electrical and the optical properties was investigated in this study. X-ray photoelectron spectroscopy (XPS, X-ray Diffractions system XRD, Atomic Force Microscopy (AFM, hall effect measurement system, UV–VIS spectrophotometer were employed to determine the characteristic of the deposited thin films. Thin film of 200 nm has observed low resistivity of 60.63 Ω cm and direct band gap of 2.5eV. This study has demonstrated that the thickness has direct influence on electrical and optical properties.

  2. Effects of specific adsorption of copper (II) ion on charge transfer reaction at the thin film LiMn2O4 electrode/aqueous electrolyte interface

    International Nuclear Information System (INIS)

    Nakayama, N.; Yamada, I.; Huang, Y.; Nozawa, T.; Iriyama, Y.; Abe, T.; Ogumi, Z.

    2009-01-01

    This study investigated the effect of a specific adsorption ion, copper (II) ion, on the kinetics of the charge transfer reaction at a LiMn 2 O 4 thin film electrode/aqueous solution (1 mol dm -3 LiNO 3 ) interface. The zeta potential of LiMn 2 O 4 particles showed a negative value in 1 x 10 -2 mol dm -3 LiNO 3 aqueous solution, while it was measured as positive in the presence of 1 x 10 -2 mol dm -3 Cu(NO 3 ) 2 in the solution. The presence of copper (II) ions in the solution increased the charge transfer resistance, and CV measurement revealed that the lithium insertion/extraction reaction was retarded by the presence of small amount of copper (II) ions. The activation energy for the charge transfer reaction in the solution with Cu(NO 3 ) 2 was estimated to be 35 kJ mol -1 , which was ca. 10 kJ mol -1 larger than that observed in the solution without Cu(NO 3 ) 2 . These results suggest that the interaction between the lithium ion and electrode surface is a factor in the kinetics of charge transfer reaction

  3. Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-06-28

    Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

  4. Nucleate pool boiling, film boiling and single-phase free convection at pressures up to the critical state. Part I: Integral heat transfer for horizontal copper cylinders

    Energy Technology Data Exchange (ETDEWEB)

    Gorenflo, Dieter; Baumhoegger, Elmar; Windmann, Thorsten; Herres, Gerhard [Institut fuer Energie- und Verfahrenstechnik, Universitaet Paderborn, Warburger Str. 100, D-33098 Paderborn (Germany)

    2010-11-15

    Transcritical working cycles for refrigerants have led to increased interest in heat transfer near the Critical State. In general, experimental results for this region differ significantly from those far from it because some fluid properties vary much more there than at a greater distance. In this paper, measurements for two-phase and single-phase free convective heat transfer from an electrically heated copper tube with 25 mm O.D. to refrigerant R125 are discussed for fluid states very close to the Critical Point and far from it. It is shown that heat transfer for film boiling slightly below and for free convection slightly above the critical pressure is very similar. The new - and also previous - experimental data for nucleate boiling, film boiling, and single-phase free convection are compared with calculated results between atmospheric and critical pressure. It can be concluded that the Principle of Corresponding States in its simplest form is very well suited to transfer the results to other refrigerants. In Part II, particular attention will be given to a minimum superheat for nucleate boiling and a maximum superheat for film boiling and single-phase free convection within the circumferential variation of the isobaric wall superheat on the lower parts of the tube. (author)

  5. Diffusive gradient in thin films technique for assessment of cadmium and copper bioaccessibility to radish (Raphanus sativus)

    Czech Academy of Sciences Publication Activity Database

    Dočekalová, H.; Škarpa, P.; Dočekal, Bohumil

    2015-01-01

    Roč. 134, March (2015), s. 153-157 ISSN 0039-9140 R&D Projects: GA ČR GAP503/10/2002 Institutional support: RVO:68081715 Keywords : radish * cadmium * copper * DGT technique * bioaccesibility Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 4.035, year: 2015

  6. Physical vapor deposition and analysis of copper indium aluminum diselenide thin films for high band gap solar cells

    Science.gov (United States)

    Haimbodi, Moses Warotua

    CuInSe2 films and related alloys have been used to fabricate the highest efficiency thin film solar cells. Alloying CuInSe2 with CuAlSe2 provides a way to engineer the band gap of the resulting films from 1 to 2.7 eV, thereby providing a pathway for improving device performance. In this work, thin films of CuIn1-xAlxSe 2 obtained by multi-source PVD were characterized and investigated for their potential use as high band gap solar cells. The band gap of the films was varied by controlling the [Al]/[Al + In] ratio. Deposition of these films with varying [Cu]/[Al + In] ratios and thickness (1--4 mum) was carried out at substrate temperatures from 350--530°C. CuIn1-xAlxSe2 based solar cells have been fabricated using the structure glass/Mo/CuIn1-xAl xSe2/CdS/ZnO/grid. The effect of varying the band gap on device performance will be discussed. The highest efficiency obtained in this work is 11% using a film with Eg ≈ 1.3 eV. For high Al content, x > 0.3, device-performance decreases mainly due to poor FF similar to that observed in CuIn1-xGaxSe2 devices and is attributed to poor minority carrier collection. For CuIn1-xAlxSe2 films with x = 1, data is analyzed and presented with respect to [Cu]/[Al] and Se to total metal flux ratio, RSe/RM. Phase analysis shows that the resulting films contain different phases that depend on these parameters. Several of these films also contain concentrations of oxygen varying from 12 to 60 at. % as the [Cu]/[Al] ratio decreases. For RSe/R M > 10, a new structure we label as CuxAlySe z was observed. The oxygen content in all of the films obtained under RSe/RM > 10 vary between 1--3 at. %. Based on the Cu-Se, Al-Se, Cu-Al binary and the Cu2Se-Al2Se 3 pseudo-binary phase diagrams, a phenomenological film growth model is presented showing that the film growth kinetics are controlled by the delivery of Se.

  7. Bifunctional sensor of pentachlorophenol and copper ions based on nanostructured hybrid films of humic acid and exfoliated layered double hydroxide via a facile layer-by-layer assembly

    International Nuclear Information System (INIS)

    Yuan, Shuang; Peng, Dinghua; Hu, Xianluo; Gong, Jingming

    2013-01-01

    Graphical abstract: -- Highlights: •A new highly sensitive bifunctional electrochemical sensor developed. •As-prepared sensor fabricated by alternate assembly of HA and exfoliated LDH nanosheets. •Such a newly designed sensor combining the individual properties of HA and LDH nanosheets. •Simultaneous determination of pentachlorophenol and copper ions achieved. •Practical applications demonstrated in water samples. -- Abstract: A new, highly sensitive bifunctional electrochemical sensor for the simultaneous determination of pentachlorophenol (PCP) and copper ions (Cu 2+ ) has been developed, where organic–inorganic hybrid ultrathin films were fabricated by alternate assembly of humic acid (HA) and exfoliated Mg–Al-layered double hydroxide (LDH) nanosheets onto ITO substrates via a layer-by-layer (LBL) approach. The multilayer films were then characterized by means of UV–vis spectrometry, scanning electron microscopy (SEM), and atomic force microscope (AFM). These films were found to have a relatively smooth surface with almost equal amounts of HA incorporated in each cycle. Its electrochemical performance was systematically investigated. Our results demonstrate that such a newly designed (LDH/HA) n multilayer films, combining the individual properties of HA (dual recognition ability for organic herbicides and metal ions) together with LDH nanosheets (a rigid inorganic matrix), can be applied to the simultaneous analysis of PCP and Cu(II) without interference from each other. The LBL assembled nanoarchitectures were further investigated by X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (IR), which provides insight for bifunctional sensing behavior. Under the optimized conditions, the detection limit was found to be as low as 0.4 nM PCP, well below the guideline value of PCP in drinking water (3.7 nM) set by the United States Environmental Protection Agency (U.S. EPA), and 2.0 nM Cu 2+ , much below the guideline value (2.0 mg L −1

  8. Graphene-based copper oxide thin film nanostructures as high-efficiency photocathode for p-type dye-sensitized solar cells

    Science.gov (United States)

    Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Cebeci, Hulya; Urk, Deniz

    2017-10-01

    Graphene-based p-type dye-sensitized solar cells (p-DSSCs) have been proposed and fabricated using copper oxide urchin-like nanostructures (COUN) as photocathode with an FeS2 counter electrode (CE). COUN composed of Cu2O core sphere and CuO shell nanorods with overall diameters of 2 to 4 μm were grown by a simple hydrothermal method with self-assemble nucleation. It was figured out that the formation of copper oxide core/shell structures could be adjusted by an ammonia additive leading to pH change of the precursor solution. In addition to a photocathode, we also demonstrated FeS2 thin films as an efficient CE material alternative to the conventional Pt CEs in DSSCs. FeS2 nanostructures, with diameters of 50 to 80 nm, were synthesized by a similar hydrothermal approach. FeS2 nanostructures are demonstrated to be an outstanding CE material in p-DSSCs. We report graphene/COUN as photocathode and Pt/FeS2 as CE in p-DSSCs, and results show that the synergetic combination of electrodes in each side (increased interconnectivity between COUN and graphene layer, high surface area, and high catalytic activity of FeS2) increased the power conversion efficiency from 1.56% to 3.14%. The excellent performances of COUN and FeS2 thin film in working and CEs, respectively, make them unique choices among the various photocathode and CE materials studied.

  9. Copper indium diselenide films deposited by spray-pyrolysis; Filmes de disseleneto de cobre e indio depositados por spray-pirolise

    Energy Technology Data Exchange (ETDEWEB)

    Manhanini, C. S.; Paes Junior, H.R., E-mail: carlamanhanini@gmail.com, E-mail: hervalpaes@gmail.com [Universidade Estadual do Norte Fluminense, (CCT/UENF), Campos dos Goytacazes, RJ (Brazil). Lab. de Materiais Avancados

    2017-04-15

    Cu{sub 1-x}In{sub x} Se{sub 2} (0.45≤ x ≤0.80) films were deposited on glass substrate by spray pyrolysis technique, for use as absorbing layer of photovoltaic cells. The structural, morphological, optical and electrical properties of the films were analyzed according to the variation of the stoichiometry used. The analysis by X-ray diffraction showed that the most intense peaks were of orientation (204/220) and the films have the phases CuSe, CuSe{sub 2} and CuInSe{sub 2}. The films showed uniform surface without cracks independently of the stoichiometry used. In the electrical characterization, the deposited films showed activation energy of the electrical conduction process with average value of 0.74 eV and typical behavior for semiconductors. The optical characterization was performed at the wavelength gap of 350 to 1100 nm, and the films showed absorption coefficient on the order of 10{sup 3} cm{sup -1} in the wavelength of 550 nm and optical band gap of 1.4 eV. The results indicated that the most suitable condition for deposition of films for their application as absorbing layer had as substrate temperature 400 °C, a solution flow rate of 1 mL/min, deposition time of 10 min and stoichiometry of Cu{sub 0.2}In{sub 0.8}Se{sub 2}, thus obtaining films without cracks, with large absorption coefficient of 6.8x10{sup 3} cm{sup -1} for the wavelength of 550 nm, thickness of approximately 2.5 μm and electrical resistivity of 0.13 kΩ.m at room temperature. (author)

  10. Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers

    International Nuclear Information System (INIS)

    Costa e Silva, Danilo Lopes

    2015-01-01

    In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

  11. An impact of the copper additive on photocatalytic and bactericidal properties of TiO2 thin films

    Directory of Open Access Journals (Sweden)

    Wojcieszak Damian

    2017-07-01

    Full Text Available The biological and photocatalytic activity of TiO2 and TiO2:Cu in relation to their structure, surface topography, wettability and optical properties of the thin films was investigated. Thin-film coatings were prepared by magnetron sputtering method in oxygen plasma with use of metallic targets (Ti and Ti-Cu. The results of structural studies revealed that addition of Cu into titania matrix (during the deposition process resulted in obtaining of an amorphous film, while in case of undoped TiO2, presence of nanocrystalline anatase (with crystallites size of 20 nm was found. Moreover, an addition of cooper had also an effect on surface diversification and decrease of its hydrophilicity. The roughness of TiO2:Cu film was 25 % lower (0.6 nm as-compared to titania (0.8 nm. These modifications of TiO2:Cu had an impact on the decrease of its photocatalytic activity, probably as a result of the active surface area decrease. Antibacterial and antifungal properties of the thin films against bacteria (Enterococcus hirae, Staphylococcus aureus, Bacillus subtilis, Escherichia coli and yeast (Candida albicans were also examined. For the purpose of this work the method dedicated for the evaluation of antimicrobial properties of thin films was developed. It was revealed that Cu-additive has a positive impact on neutralization of microorganisms.

  12. Atomistic simulation of femtosecond laser pulse interactions with a copper film: Effect of dependency of penetration depth and reflectivity on electron temperature

    Science.gov (United States)

    Amouye Foumani, A.; Niknam, A. R.

    2018-01-01

    The response of copper films to irradiation with laser pulses of fluences in the range of 100-6000 J/m2 is simulated by using a modified combination of a two-temperature model (TTM) and molecular dynamics (MD). In this model, the dependency of the pulse penetration depth and the reflectivity of the target on electron temperature are taken into account. Also, the temperature-dependent electron-phonon coupling factor, electron thermal conductivity, and electron heat capacity are used in the simulations. Based on this model, the dependence of the integral reflectivity on pulse fluence, the changes in the film thickness, and the evolution of density and electron and lattice temperatures are obtained. Moreover, snapshots that show the melting and disintegration processes are presented. The disintegration starts at a fluence of 4200 J/m2, which corresponds with an absorbed fluence of 616 J/m2. The calculated values of integral reflectivity are in good agreement with the experimental data. The inclusion of such temperature-dependent absorption models in the TTM-MD method would facilitate the comparison of experimental data with simulation results.

  13. Microstructure formation via roll-to-roll UV embossing using a flexible mould made from a laminated polymer–copper film

    International Nuclear Information System (INIS)

    Zhong, Z W; Shan, X C

    2012-01-01

    Roll-to-roll large format UV embossing processes aim to revolutionize the manufacturing of functional films, with the ability to process a large area at one time, resulting in high throughput and cost reduction. In this paper, we present the experimental results obtained during the process development for roll-to-roll large format UV embossing. Flexible moulds were fabricated from a hybrid film substrate made of a liquid crystal polymer with clad copper foils laminated on both sides of it. The effective pattern area of the fabricated flexible mould was 400 mm × 300 mm with a minimal feature size of 50 µm. The results show that the roll-to-roll embossing processes are capable of producing micro-scale structures and functional devices over a large area at one time. Large-area roll-to-roll embossing was demonstrated by using the hybrid flexible mould, and micro-features and structures such as micro-channels and dot arrays were replicated on thermoplastic substrates. In addition to its ease and low cost in fabrication, the hybrid flexible moulds demonstrated to have acceptable fidelity and durability. The hybrid flexible mould is a novel solution for large-area embossing. (paper)

  14. Composition profiles of several contaminated and cleaned surfaces of gold thick films on copper plates by Auger electron and secondary ion mass spectroscopies

    International Nuclear Information System (INIS)

    Komiya, S.; Mizuno, M.; Narusawa, T.; Maeda, H.; Yoshikawa, M.

    1974-01-01

    Preparation and evaluation of a clean Au film are investigated. Development of a preparation method for obtaining clean surface on a copper shell in the JFT-2a (DIVA) TOKAMAK toroidal vacuum chamber is the aim of the present work. Au films prepared by ion plating and vacuum evaporation have been analysed by a cylindrical mirror Auger electron analyser in combination with a quadrupole mass spectrometer during 2 keV Xe ion bombardment from a sputter ion gun over the whole range of thickness of several microns. Contaminants are found to segregate on the top surface and at the interface. To expose a clean Au surface by the ion bombardment, surface layers within 1000 A had to be removed from the surfaces contaminated by touching with either a naked hand or a nylon glove or covered by a small amount of Ti. Mutual diffusions across the interfaces are also analyzed as a function of the substrate temperature. A Nb sandwich layer inhibites effectively the mutual diffusion. (auth.)

  15. A single-walled carbon nanotubes/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/copper hexacyanoferrate hybrid film for high-volumetric performance flexible supercapacitors

    Science.gov (United States)

    Li, Jianmin; Li, Haizeng; Li, Jiahui; Wu, Guiqing; Shao, Yuanlong; Li, Yaogang; Zhang, Qinghong; Wang, Hongzhi

    2018-05-01

    Volumetric energy density is generally considered to be detrimental to the actual application of supercapacitors, which has provoked a range of research work on increasing the packing density of electrodes. Herein, we fabricate a free-standing single-walled carbon nanotubes (SWCNTs)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/copper hexacyanoferrate (CuHCF) nanoparticles (NPs) composite supercapacitor electrode, with a high packing density of 2.67 g cm-3. The pseudocapacitive CuHCF NPs are decorated onto the SWCNTs/PEDOT:PSS networks and filled in interspace to increase both of packing density and specific capacitance. This hybrid electrode exhibits a series of outstanding performances, such as high electric conductivity, ultrahigh areal and volumetric capacitances (969.8 mF cm-2 and 775.2 F cm-3 at scan rate of 5 mV s-1), long cycle life and superior rate capability. The asymmetric supercapacitor built by using the SWCNTs/PEDOT:PSS/CuHCF film as positive electrode and Mo-doped WO3/SWCNTs film as negative electrode, can deliver a high energy density of 30.08 Wh L-1 with a power density of 4.25 kW L-1 based on the total volume of the device. The approach unveiled in this study could provide important insights to improving the volumetric performance of energy storage devices and help to reach the critical targets for high rate and high power density demand applications.

  16. Particles Size and Conductivity Study of P-Type Copper (I) Iodide (CuI) Thin Film for Solid State Dye-Sensitized Solar Cells

    International Nuclear Information System (INIS)

    Zainun, A R; Mamat, M H; Noor, U M; Rusop, M

    2011-01-01

    Copper Iodide based dye-sensitized solar cells (DSSC) has been reported either deliver small photocurrents or highly unstable. In this research, by added in a small amount of Tetra-methyl-ethylene-diamine (TMED) into CuI sol-gel (CuI in acetonitrile), performance of electrical properties and optical properties of CuI based DSSC have been studied. Particles size and conductivity of CuI solution were measured when addition of TMED to the sol at 0.05M concentrations. Spin-coating technique has been explored to prepare nano-crystalline CuI films at room temperature. The film was examined for their surface morphology, optical and electrical properties by field emission scanning electron microscope (FESEM), ultraviolet visible spectroscopy (UV-Vis), Photoluminescence (PL) and current-voltage (I-V) measurement respectively. The results were then compared with CuI sol-gel which prepared by dissolving CuI powder with acetonitrile only. It showed some improvement to the CuI-based DSSC by incorporation of a small quantity of TMED in the solution of precursor.

  17. Particle size and conductivity study of P-type copper (I) iodide (CuI) thin film for solid state dye sensitized solar cells

    International Nuclear Information System (INIS)

    Ayib Rosdi Zainun; Mohd Hafiz Mamat; Rusop, M.

    2009-01-01

    Full text: Copper Iodide based dye-sensitized solar cells (DSSC) has been reported either deliver small photocurrents or highly unstable. In this research, by added in a small amount of Tetra-methyl-ethylene-diamine (TMED) into CuI sol-gel (CuI in acetonitrile), performance of electrical properties and optical properties of CuI based DSSC have been studied. Particles size and conductivity of CuI solution were measured when addition of TMED to the sol at 0.05 M concentrations. Spin-coating technique has been explored to prepare nano-crystalline CuI films at room temperature. The film was examined for their surface morphology, optical and electrical properties by field emission scanning electron microscope (FESEM), ultraviolet visible spectroscopy (UV-Vis), Photoluminescence (PL) and current-voltage (I-V) measurement respectively. The results were then compared with CuI sol-gel which prepared by dissolving CuI powder with acetonitrile only. It showed some improvement to the CuI-based DSSC by incorporation of a small quantity of TMED in the solution of precursor. (author)

  18. Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers

    Science.gov (United States)

    Mehrabian, M.; Esteki, Z.; Shokrvash, H.; Kavei, G.

    2016-10-01

    Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV-visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2+ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu2+ ion concentration was increased, which indicates that the acceptor level (of Cu2+) is getting close to the valence band of ZnS.

  19. Characterization and Gas Sensing Properties of Copper-doped Tin Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Zhaoxia ZHAI

    2016-05-01

    Full Text Available Tin oxide-based thin films are deposited by ultrasonic spray pyrolysis technology, in which Cu addition is introduced to enhance the gas sensing performance by H2S detection. The thin films are porous and comprise nano-sized crystallites. One of the Cu-containing thin film sensors demonstrates a fast and significant response to H2S gas. The values of power law exponent n are calculated to discuss the sensitivity of the sensors, which is significantly promoted by Cu additive. The sensitivity of Cu-doped SnO2 gas sensors is determined by two mechanisms. One is the normal gas sensing mechanism of SnO2 grains, and the other is the promoted mechanism caused by the transformation between CuO and CuS in the H2S detection. DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12917

  20. Structure and photoelectrochemistry of silver-copper-indium-diselenide ((AgCu)InSe2) thin film

    Science.gov (United States)

    Zhang, Lin Rui; Li, Tong; Wang, Hao; Pang, Wei; Chen, Yi Chuan; Song, Xue Mei; Zhang, Yong Zhe; Yan, Hui

    2018-02-01

    In this work, silver (Ag) precursors with different thicknesses were sputtered on the surfaces of CuIn alloys, and (AgCu)InSe2 (ACIS) films were formed after selenization at 550 °C under nitrogen condition using a rapid thermal process furnace. The structure and electrical properties of the ACIS films were investigated. The result showed that the distribution of Ag+ ion was more uniform with increasing the thickness of Ag precursor, and the surface of the thin-film became more homogeneous and denser. When Ag/Cu ratio ≥0.249, the small grain particles disappeared. The band gap can be rationally controlled by adjusting Ag content. When (Ag + Cu)/In ratio ≥ 1.15, the surface of the ACIS thin-film mainly exhibited n-type semiconductor. Through the photoelectrochemistry measurement, it was observed that the incorporation of Ag+ ions could improve photocurrent by adjusting the band gap. With the Ag precursor thickness increased, the dark current decreased at the more negative potential.

  1. An experimental assessment of the size effects on the strength and ductility of freestanding copper films under macroscopically homogenous deformation

    Science.gov (United States)

    Chauhan, Shakti Singh

    Metallic interconnects and circuitry has been experiencing excessive deformation beyond their elastic limits in many applications, ranging from micro-electromechanical systems (MEMS) to flexible electronics. These broad applications are creating needs to understand the extent of strength and ductility of freestanding metallic films at scales approaching the micron and sub micron range. This work aims to elucidate the effects of microstructural constraint as well as geometric dimensional constraint on the strength and ductility of freestanding Cu films under uniaxial tension. Two types of films are tested (i) high purity rolled films of 12.5-100microm thickness and average grain sizes of 11-47microm and (ii) electroplated films of 2-50 microm thickness and average grain sizes of 1.8-5microm. Several experimental tools including residual electrical resistivity measurements, surface strain measurements and surface roughness measurements are employed to highlight the underlying deformation mechanisms leading to the observed size effects. With respect to the strength of the specimens, we find that the nature and magnitude of thickness effects is very sensitive to the average grain size. In all cases, coupled thickness and grain size effects were observed. This study shows that this observed coupling, unique to the case of freestanding specimen, arises because the observed size effects are an outcome of the size dependence of two fundamental microstructural parameters i.e. volume fraction of surface grains and grain boundary area per unit specimen volume. For films having thickness and grain sizes greater than 5microm, thickness dependent weakening is observed for a constant grain size. Reducing thickness results in an increase in the volume fraction of grains exposed to the free surface as well as a reduction in the grain boundary area per unit specimen volume. The former effect leads to a reduction in the effective microstructural constraint on the intragranular

  2. Deposition of PZT thin film onto copper-coated polymer films by mean of pulsed-DC and RF-reactive sputtering

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Labitzke, R.; Adolphi, B.; Jastrabík, Lubomír; Adámek, Petr; Drahokoupil, Jan; Hubička, Zdeněk; Kiselev, D.A.; Kholkin, A. L.; Gerlach, G.; Dejneka, Alexandr

    2011-01-01

    Roč. 205, č. 2 (2011), S241-S244 ISSN 0257-8972 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed DC reactive sputtering * RF reactive sputtering * complex oxide film deposition * polymer substrate Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.867, year: 2011

  3. Engineering kinetic barriers in copper metallization

    International Nuclear Information System (INIS)

    Huang Hanchen; Wei, H.L.; Woo, C.H.; Zhang, X.X.

    2002-01-01

    In metallization processes of integrated circuits, it is desirable to deposit the metal lines (aluminum or copper) fast and at low temperatures. However, the lines (films) usually consist of undesirable columns and voids, because of the absence of sufficient diffusion--a direct result of large kinetic barriers. Following the proposal and realization of the three-dimensional Ehrlich-Schwoebel (3D ES) barrier, we present here a method to engineer this kinetic barrier so as to improve quality of deposited copper films. We deposit copper films by magnetron sputtering, characterize the film structure and texture by using the scanning electron microscope and the x-ray diffraction, respectively. Taking indium as surfactant during copper deposition, we have achieved much better density and bottom coverage of copper filled trenches. The characterizations show that the improvement is the result of the 3D ES barrier reduction caused by indium addition. Engineering the 3D ES barrier therefore leads to improved film quality

  4. Direct structural and spectroscopic investigation of ultrathin films of tetragonal CuO: Six-fold coordinated copper

    NARCIS (Netherlands)

    Samal, D.; Tan, H.; Takamura, Y.; Siemons, W.; Verbeeck, J.; van Tendeloo, G.; Arenholz, E.; Jenkins, A.; Rijnders, Augustinus J.H.M.; Koster, Gertjan

    2014-01-01

    Unlike other 3d transition metal monoxides (MnO, FeO, CoO, and NiO), CuO is found in a low-symmetry distorted monoclinic structure rather than the rocksalt structure. We report here of the growth of ultrathin CuO films on SrTiO3 substrates; scanning transmission electron microscopy was used to show

  5. Deposition of thin films by magnetron sputtering molybdenum in samples of pure copper; Deposicao de filmes finos de molibdenio por magnetron sputtering em amostra de cobre puro

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, N.M.; Almeida, E.O. de; Alves Junior, C. [Universidade Federal do Rio Grande do Norte, Campus Universitario Lagoa Nova, PPGCEM - Natal, RN (Brazil); Lourenco, J.M. [Instituto Federal de Educacao, Ciencias e Tecnologia do Rio Grande do Norte (IFRN), Natal, RN (Brazil)

    2010-07-01

    The deposition surface is a process of thermochemical treatment, which involves the deposition of a thin film usually about one to two microns on a metallic substrate, which constitutes one of the most important surface engineering techniques. The plasma deposition process with the configuration of magnetron sputtering it is removing material from a solid surface (target) through the impact of energetic particles from plasma. The aim of this study is to characterize the microstructure of the material under study using the techniques of optical microscopy and scanning electron microscopy. (author)

  6. Microstructural characterization of copper corrosion in aqueous and soil environments

    International Nuclear Information System (INIS)

    Srivastava, A.; Balasubramaniam, R.

    2005-01-01

    Scanning electron microscopy has been used to investigate the surface films on pure copper after exposure to different aqueous and soil environments, containing chloride, sulfide and ammonium salts. The morphology of the films formed on copper surface in aqueous and soil environments was different for the same amount of pollutants. The surface films formed in soil environments were not homogenous in contrast to the films formed in aqueous environments. The damaging effect of chloride ions and the benign role of sulfide ions were revealed in both the environments. Local compositional analysis confirmed that the surface films formed on copper consisted predominantly of copper and oxygen

  7. Confinement - assisted shock-wave-induced thin-film delamination (SWIFD) of copper indium gallium diselenide (CIGS) on a flexible substrate

    Science.gov (United States)

    Lorenz, Pierre; Zagoranskiy, Igor; Ehrhardt, Martin; Han, Bing; Bayer, Lukas; Zimmer, Klaus

    2017-12-01

    The laser structuring of CIGS (copper indium gallium (di)selenide) solar cell material without influence and damaging the functionality of the active layer is a challenge for laser methods The shock-wave-induced thin-film delamination (SWIFD) process allows structuring without thermal modifications due to a spatial separation of the laser absorption from the functional layer removal process. In the present study, SWIFD structuring of CIGS solar cell stacks was investigated. The rear side of the polyimide was irradiated with a KrF-Excimer laser. The laser-induced ablation process generates a traverse shock wave, and the interaction of the shock wave with the layer-substrate interface results in a delamination process. The effect of a water confinement on the SWIFD process was studied where the rear side of the substrate was covered with a ∼2 mm thick water layer. The resultant surface morphology was analysed and discussed. At a sufficient number of laser pulses N and laser fluences Φ, the CIGS layer can be selectively removed from the Mo back contact. The water confinement, as well as the increasing laser beam size A0 and N, results in the reduction of the necessary minimal laser fluence Φth. Further, the delaminated CIGS area increased with increasing Φ, N, and A0.

  8. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  9. Use of hydrogen peroxide to achieve interference-free stripping voltammetric determination of copper at the bismuth-film electrode

    International Nuclear Information System (INIS)

    Pacheco, Wagner F.; Miguel, Eliane M.; Ramos, Gabriel V.; Cardoso, Carlos E.; Farias, Percio A.M.; Aucelio, Ricardo Q.

    2008-01-01

    In this work, a new approach is presented to allow interference-free determination of Cu (II) by stripping voltammetry using the bismuth-film electrode. The addition of hydrogen peroxide to the electroanalytical cell has promoted complete resolution between re-dissolution peaks of Bi (III) and Cu (II). The absence of interference could be evaluated by the correlation coefficient (r > 0.99) between Cu (II) concentration and its shifted current peak (at +212 mV) while achieving a slightly fluctuation of the bismuth current peak at -180 mV. Studies were performed aiming towards the optimum conditions for trace determination of Cu (II) using hydrogen peroxide. The methodology was applied to a real sample (sugarcane spirits) and the results were compared to those from graphite furnace atomic absorption spectrometry. The analytical parameters of merit and the results of the analysis indicated that the analytical methodology could be readily used for trace determination of Cu (II)

  10. Temperature-dependent templated growth of porphine thin films on the (111) facets of copper and silver

    Energy Technology Data Exchange (ETDEWEB)

    Diller, Katharina, E-mail: katharina.diller@tum.de [Physik-Department, E20, Technische Universität München, 85748 Garching (Germany); Theoretische Chemie, Technische Universität München, 85748 Garching (Germany); Klappenberger, Florian; Allegretti, Francesco; Papageorgiou, Anthoula C.; Fischer, Sybille; Duncan, David A.; Lloyd, Julian A.; Oh, Seung Cheol; Barth, Johannes V. [Physik-Department, E20, Technische Universität München, 85748 Garching (Germany); Maurer, Reinhard J.; Reuter, Karsten [Theoretische Chemie, Technische Universität München, 85748 Garching (Germany)

    2014-10-14

    The templated growth of the basic porphyrin unit, free-base porphine (2H-P), is characterized by means of X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy measurements and density functional theory (DFT). The DFT simulations allow the deconvolution of the complex XPS and NEXAFS signatures into contributions originating from five inequivalent carbon atoms, which can be grouped into C–N and C–C bonded species. Polarization-dependent NEXAFS measurements reveal an intriguing organizational behavior: On both Cu(111) and Ag(111), for coverages up to one monolayer, the molecules adsorb undeformed and parallel to the respective metal surface. Upon increasing the coverage, however, the orientation of the molecules in the thin films depends on the growth conditions. Multilayers deposited at low temperatures exhibit a similar average tilting angle (30° relative to the surface plane) on both substrates. Conversely, for multilayers grown at room temperature a markedly different scenario exists. On Cu(111) the film thickness is self-limited to a coverage of approximately two layers, while on Ag(111) multilayers can be grown easily and, in contrast to the bulk 2H-P crystal, the molecules are oriented perpendicular to the surface. This difference in molecular orientation results in a modified line-shape of the C 1s XPS signatures, which depends on the incident photon energy and is explained by comparison with depth-resolved DFT calculations. Simulations of ionization energies for differently stacked molecules show no indication for a packing-induced modification of the multilayer XP spectra, thus indicating that the comparison of single molecule calculations to multilayer data is justified.

  11. Copper hypersensitivity

    DEFF Research Database (Denmark)

    Fage, Simon W; Faurschou, Annesofie; Thyssen, Jacob P

    2014-01-01

    hypersensitivity, a database search of PubMed was performed with the following terms: copper, dermatitis, allergic contact dermatitis, contact hypersensitivity, contact sensitization, contact allergy, patch test, dental, IUD, epidemiology, clinical, and experimental. Human exposure to copper is relatively common...

  12. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

    Science.gov (United States)

    Harter, John Wallace

    Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi

  13. Electrochemical Behavior of Catechol and Hydroquinone at Copper Doped Poly (Methyl Red Coated Hydroxyl Multiwalled Carbon Nanotube Film and Their Simultaneous Determination in Water Samples

    Directory of Open Access Journals (Sweden)

    Ying Zhang

    2014-09-01

    Full Text Available A glassy carbon electrode modified with copper doped poly (methyl red coated hydroxyl multiwalled carbon nanotube film (Cu-PMR/MWCNTs, was developed to serve as a sensor for simultaneous determination of Hydroquinone (HQ and catechol (CC in this paper. The fabricated electrode showed excellent electrocatalytic behaviors towards the oxidation of HQ and CC with the enhancement of the redox peak current and the decrease of the peak-to-peak separation. Under the optimized condition, the individual determination of HQ or CT in their mixtures was performed, the response peak currents of the modified electrodes were linear over ranges of 8.0´10-7~4.0´10-4 M (R2=0.999 for CT and 5.0´10-7~2.0´10-4 M (R2=0.993 for HQ. The sensor also exhibited good sensitivity with the detection limit of 1.0´10-8 mol/L and 5.0´10-8 mol/L for HQ and CT, respectively. The simultaneous determination of HQ and CC was demonstrated by simultaneously changing their concentrations. The reduction peak currents of HQ and CC increased linearly with the concentration of their own in the range of 8´10-7 and 2.0´10-4 M for HQ and CC, with correlation coefficients of 0.994 and 0.995 (S/N=3, respectively. This study provides a new kind of composite modified electrode for electrochemical sensors with good selectivity and strong anti-interference. It has been applied to simultaneous determination of HQ and CT in water sample with high selectivity.

  14. Polypyrrole electrodeposited on copper from an aqueous phosphate solution: Corrosion protection properties

    OpenAIRE

    Redondo, Clara; Breslin, Carmel B.

    2007-01-01

    Highly adherent and homogenous polypyrrole films were electrodeposited at copper from a dihydrogen phosphate solution. The polypyrrole films were electrosynthesized in the overoxidized state by cycling the copper electrode from –0.4 to 1.8 V (SCE) in a pyrrole-containing phosphate solution. The growth of the polypyrrole films was facilitated by the initial oxidation of the copper electrode in the phosphate solution to generate a mixed copper–phosphate, copper oxide or hydroxide layer. This la...

  15. Preparation of photoelectrodes with spectral response in the visible without applied bias based on photochemically deposited copper oxide inside a porous titanium dioxide film

    Energy Technology Data Exchange (ETDEWEB)

    Vigil, Elena [Institute of Materials-Physics Faculty, University of Havana, Colina Universitaria, C. Habana 10 400 (Cuba); Gonzalez, Bernardo [Institute of Materials-Physics Faculty, University of Havana, Colina Universitaria, C. Habana 10 400 (Cuba); Zumeta, Inti [Institute of Materials-Physics Faculty, University of Havana, Colina Universitaria, C. Habana 10 400 (Cuba); Domingo, Concepcion [Institut de Ciencia de Materials de Barcelona (ICMAB), CSIC, 08290 Cerdanyola del Valles (Spain); Domenech, Xavier [Department of Chemistry, Universitat Autonoma de Barcelona, 08290 Cerdanyola del Valles (Spain); Ayllon, Jose A. [Department of Chemistry, Universitat Autonoma de Barcelona, 08290 Cerdanyola del Valles (Spain)]. E-mail: JoseAntonio.Ayllon@uab.es

    2005-10-01

    A soft and simple photochemical technique is proposed for the incorporation of copper oxide to nanoporous TiO{sub 2} with the purpose of sensitizing the TiO{sub 2} to wavelengths in the visible range. An aqueous solution of copper formate is employed as precursor. The light intensity value needed for the process, as well as its spectral range, is readily attainable with solar light. Because of the importance of heterojunctions of porous semiconductors in solar energy application, like extremely thin absorber solar cells, experimental conditions have been studied in order to obtain a thin absorption layer of copper oxide covering the TiO{sub 2}. Selection of copper formate solution concentration, irradiation time and previous immersion time in the precursor solution has been studied using X-ray diffraction, scanning electron microscopy and optical spectral transmission. Direction and wavelength dependence of photocurrent show that photons are absorbed by the copper oxide and electrons injected to the TiO{sub 2}.

  16. Copper Test

    Science.gov (United States)

    ... in the arm and/or a 24-hour urine sample is collected. Sometimes a health practitioner performs a liver ... disease , a rare inherited disorder that can lead to excess storage of copper in the liver, brain, and other ...

  17. Observation of microwave conductivity in copper iodide films and relay effect in the dye molecules attached to CuI photocathode

    International Nuclear Information System (INIS)

    Sirimanne, Prasad M.; Soga, Tetsuo; Kunst, Marinus

    2005-01-01

    Microwave conductivity and two channels of recombination process were observed in the CuI films. Spin orbital splitting resulted in split in the valence band of CuI. The dye molecules attached to the CuI film act as an electron mediator in addition to the sensitization process under back wall-mode illumination. - Graphical abstract: Transient microwave-photoconductivity of CuI film

  18. Colloidal and electrochemical aspects of copper-CMP

    Science.gov (United States)

    Sun, Yuxia

    Copper based interconnects with low dielectric constant layers are currently used to increase interconnect densities and reduce interconnect time delays in integrated circuits. The technology used to develop copper interconnects involves Chemical Mechanical Planarization (CMP) of copper films deposited on low-k layers (silica or silica based films), which is carried out using slurries containing abrasive particles. One issue using such a structure is copper contamination over dielectric layers (SiO2 film), if not reduced, this contamination will cause current leakage. In this study, the conditions conducive to copper contamination onto SiO2 films during Cu-CMP process were studied, and a post-CMP cleaning technique was discussed based on experimental results. It was found that the adsorption of copper onto a silica surface is kinetically fast (electrocoagulation was investigated to remove both copper and abrasive slurry particles simultaneously. For effluent containing ˜40 ppm dissolved copper, it was found that ˜90% dissolved copper was removed from the waste streams through electroplating and in-situ chemical precipitation. The amount of copper removed through plating is impacted by membrane surface charge, type/amount of complexing agents, and solid content in the slurry suspension. The slurry particles can be removed ˜90% within 2 hours of EC through multiple mechanisms.

  19. Copper(II) tungstate nanoflake array films: sacrificial template synthesis, hydrogen treatment, and their application as photoanodes in solar water splitting.

    Science.gov (United States)

    Hu, Dianyi; Diao, Peng; Xu, Di; Xia, Mengyang; Gu, Yue; Wu, Qingyong; Li, Chao; Yang, Shubin

    2016-03-21

    We report the preparation of CuWO4 nanoflake (NF) array films by using a solid phase reaction method in which WO3 NFs were employed as sacrificial templates. The SEM, TEM and XRD results demonstrated that the obtained CuWO4 films possessed a network structure that was composed of single crystalline NFs intersected with each other. The CuWO4 NF films showed superior photoelectrochemical (PEC) activity to other CuWO4 photoanodes reported recently for the oxygen evolution reaction (OER). We attributed the high activity to the unique morphological and crystalline structure of the CuWO4 film, which enhanced the photoactivity by providing a large specific area, a short hole transport distance from the inside of CuWO4 to the CuWO4/solution interface, and a low grain boundary density. Hydrogen treatment by annealing the CuWO4 NF film in mixed gases of H2 and Ar could further enhance the photoactivity, as hydrogen treatment significantly increased the electron density of CuWO4 by generating oxygen vacancy in the lattice. The photocurrent density for OER obtained on the hydrogen-treated (H-treated) CuWO4 NF film is the largest ever reported on CuWO4 photoanodes in the literature. Moreover, the CuWO4 photoanodes exhibit good stability in weak alkaline solution, while the H-treated CuWO4 photoanodes exhibit acceptable stability. This work not only reveals the potential of CuWO4 as a photoanode material for solar water splitting but also shows that the construction of nanostructured CuWO4 photoanodes is a promising method to achieve high PEC activity toward OER.

  20. Surface properties of copper based cermet materials

    International Nuclear Information System (INIS)

    Voinea, M.; Vladuta, C.; Bogatu, C.; Duta, A.

    2008-01-01

    The paper presents the characterization of the surface properties of copper based cermets obtained by two different techniques: spray pyrolysis deposition (SPD) and electrodeposition. Copper acetate was used as precursor of Cu/CuO x cermet. The surface morphology was tailored by adding copolymers of maleic anhydride with controlled hydrophobia. The films morphology of Cu/CuO x was assessed using contact angle measurements and AFM analysis. The porous structures obtained via SPD lead to higher liquid adsorption rate than the electrodeposited films. A highly polar liquid - water is recommended as testing liquid in contact angle measurements, for estimating the porosity of copper based cermets, while glycerol can be used to distinguish among ionic and metal predominant structures. Thus, contact angle measurements can be used for a primary evaluation of the films morphology and, on the other hand, of the ratio between the cermet components

  1. Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

    International Nuclear Information System (INIS)

    Labidi, A.; Bejaoui, A.; Ouali, H.; Akkari, F. Chaffar; Hajjaji, A.; Gaidi, M.; Kanzari, M.; Bessais, B.; Maaref, M.

    2011-01-01

    The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

  2. Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

    Energy Technology Data Exchange (ETDEWEB)

    Labidi, A., E-mail: Ahmed_laabidi@yahoo.fr [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Bejaoui, A.; Ouali, H. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Akkari, F. Chaffar [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Hajjaji, A.; Gaidi, M. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Maaref, M. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia)

    2011-09-15

    The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

  3. Graphene-protected copper and silver plasmonics

    DEFF Research Database (Denmark)

    Kravets, V. G.; Jalil, R.; Kim, Y. J.

    2014-01-01

    suitable for plasmonic applications. To this end, there has been a continuous search for alternative plasmonic materials that are also compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered...... with one to a few graphene layers show excellent plasmonic characteristics. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic...

  4. Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers; Filmes finos de carbono depositados por meio da tecnica de magnetron sputtering usando cobalto, cobre e niquel como buffer-layers

    Energy Technology Data Exchange (ETDEWEB)

    Costa e Silva, Danilo Lopes

    2015-11-01

    In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

  5. Maximum: Recent Implementation and Application to the Study of Corrosion-Induced Microstructures in Thin Films of Aluminum-Copper Metallization.

    Science.gov (United States)

    Liang, Shoudeng

    We describe the recent implementation of a synchrotron radiation based scanning soft X-ray photoemission microscope - MAXIMUM, and discuss its application to the investigation of corrosion-induced microstructures in Al-Cu-Si thin films. The microscope employs a Mo/Si multilayer-coated Schwarzschild objective to focus 95eV X-rays from an undulator beamline. The photoelectrons are energy-analyzed by a CMA, and the sample is rastered to produce an image. We have achieved 980A spatial and 250meV energy resolution. Recent addition of a sample preparation and transfer system to the microscope enables us to perform surface and materials studies under UHV conditions. Since the spatial resolution of the microscope is determined by the spot size of the focused X-rays, any electrostatic potential from surface charging will not affect the image quality. This allowed the study of highly insulating films with the use of an electron flood gun to compensate for spectral shifts. We have employed MAXIMUM to investigate corrosion -induced surface microstructures in the Al-Cu-Si thin films commonly utilized in VLSI metallization. Spectromicroscopy was performed to characterize the chemical species and their distribution on the film surface after corrosion under 85% relative humidity at 85^circ C. The experimental images demonstrated that Cu -rich precipitates were formed near the surface region beneath the oxide layer upon annealing. We also observed a correlation between the precipitates and the increased corrosion in the alloy film: the localized corrosion occurs only at those sites where precipitation has taken place. This implies that the surface oxide layer is modified by the underlying Cu-rich phase such that it loses protection against moisture. After pitting, the Cu-rich phase acts as a cathode to facilitate corrosion of the surrounding Cu-deficient Al matrix via galvanic action. The corrosion -induced microstructures show characteristic circular features in the micrographs of

  6. Electrochemical determination of 2,4,6-trinitrophenol using a hybrid film composed of a copper-based metal organic framework and electroreduced graphene oxide.

    Science.gov (United States)

    Wang, Yong; Cao, Wei; Wang, Luyao; Zhuang, Qianfen; Ni, Yongnian

    2018-06-04

    A metal organic framework (MOF) of the type copper(II)-1,3,5-benzenetricarboxylic acid (Cu-BTC) was electrodeposited on electroreduced graphene oxide (ERGO) placed on a glassy carbon electrode (GCE). The modified GCE was used for highly sensitive electrochemical determination of 2,4,6-trinitrophenol (TNP). The fabrication process of the modified electrode was characterized by scanning electron microscopy and electrochemical impedance spectroscopy. Differential pulse voltammetry (DPV) demonstrates that the Cu-BTC/ERGO/GCE gives stronger signals for TNP reduction than Cu-BTC/GCE or ERGO/GCE alone. DPV also shows TNP to exhibit three reduction peaks, the first at a potential of -0.42 V (vs. SCE). This potential was selected because the other three similarly-structured compounds (2-nitrophenol, 4-nitrophenol, 2,4-dinitrophenol) do not give a signal at this potential. Response is linear in the 0.2 to 10 μM TNP concentration range, with a 0.1 μM detection limit (at S/N = 3) and a 15.98 μA∙μM -1 ∙cm -2 sensitivity under optimal conditions. The applicability of the sensor was evaluated by detecting TNP in spiked tap water and lake water samples. Recoveries ranged between 95 and 101%. Graphical abstract Schematic presentation of an electrochemical sensor that was fabricated by electrodeposition of the metal-organic framework (MOF) of copper(II)-1,3,5-benzenetricarboxylic acid (Cu-BTC) onto the surface of electroreduced graphene oxide (ERGO) modified glassy carbon electrode (GCE). It was applied to sensitive and selective detection of 2,4,6-trinitrophenol (TNP).

  7. Deposition and characterisation of copper for high density interconnects

    International Nuclear Information System (INIS)

    McCusker, N.

    1999-09-01

    Copper has been deposited by sputtering and investigated for application as high density interconnects, with a view to maximising its performance and reliability. A sputter deposition process using gettering has been developed, which produces consistently pure, low resistivity films. A relationship between film thickness and resistivity has been explained by studying the grain growth process in copper films using atomic force microscopy. The Maydas-Shatzkes model has been used to separate the contributions of grain boundary and surface scattering to thin film resistivity, in copper and gold. Stress and texture in copper film have been studied. Annealing has been used to promote grain growth and texture development. Electromigration has been studied in copper and aluminium interconnects using a multi-line accelerated test set-up. A difference in failure distributions and void morphologies has been explained by an entirely different damage mechanism. The importance of surface/interface migration in electromigration damage of copper lines has been established and explained using a grain boundary-grooving model. A tantalum overlayer was found to extend the lifetime of copper lines. A composite sputtering target has been used to deposit copper/zirconium alloy films. The composition of the alloys was studied by Rutherford backscattering, Auger and secondary neutral mass spectrometry. The alloy films had an improved electromigration lifetime. A surface controlled mechanism is proposed to explain the advantage. A metal oxide semiconductor (MOS) capacitor technique is used to investigate barrier reliability. Tungsten is shown to be an effective diffusion barrier for copper, up to 700 deg. C. (author)

  8. Synthesis, characterization and decomposition studies of tris(N,N-dibenzyldithiocarbamato)indium(III): chemical spray deposition of polycrystalline CuInS2 on copper films

    International Nuclear Information System (INIS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S'), commonly referred to as tris(N,N-dibenzyldithiocarbamato)indium(III), In(S 2 CNBz 2 ) 3 , was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1-bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry, and Fourier transform infrared (FT-IR) spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS 2 and benzyl moieties in to the gas phase, resulting in bulk In 2 S 3 . Preliminary spray CVD experiments indicate that In(S 2 CNBz 2 ) 3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS 2 films

  9. Synthesis, Characterization and Decomposition Studies of Tris(N,N-dibenzyldithiocarbamato) Indium(III): Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    Science.gov (United States)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S ), commonly referred to as tris(N,Ndibenzyldithiocarbamato) indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1 bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry and Fourier-Transform infrared spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.

  10. An Electrochemical Investigation into the Corrosion Protection Properties of Coatings for the Active Metal Copper

    OpenAIRE

    Carragher, Ursula

    2013-01-01

    In the research presented in this thesis, corrosion protection films were synthesised and characterised. The films were based on polypyrrole (PPy) coatings doped with combinations of tartrate, oxalate and dodecylbenzene sulfonate (DBS) along with the incorporation of multiwalled carbon nanotubes (MWCNT), and viologen films adsorbed at copper. The corrosion protective properties of these films were studied and compared to the uncoated copper substrate. They were assessed and stu...

  11. Adsorption of 2-mercaptobenzothiazole on copper surface from phosphate solutions

    International Nuclear Information System (INIS)

    Kazansky, L.P.; Selyaninov, I.A.; Kuznetsov, Yu.I.

    2012-01-01

    Analysis of the electrochemical and XPS results has shown that adsorption of 2-mercaptobenzothiazole (MBT) on copper electrodes in neutral phosphate solutions proceeds through the formation of the chemical bonds by copper (I) cations with exo-sulfur and nitrogen atoms. A protection layer formed of Cu(I)MBT complex prevents precipitation of copper (II) phosphate on a copper surface. The thickness of the surface film consisting of a complex [Cu(I)MBT] n (having probably polymeric nature), where MBT acts as at least three-dentate ligand, increases depending on the exposure time, reaching 8-9 nm after immersing for 12 h in test solution. Even in a case of the preliminary formation of copper (II) phosphate on the copper electrode at the anodic potential addition of small amounts of MBT results in complete removal of copper (II) phosphate from the surface.

  12. Solution-processed copper-nickel nanowire anodes for organic solar cells

    Science.gov (United States)

    Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

    2014-05-01

    This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

  13. Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

    KAUST Repository

    Wijeyasinghe, Nilushi

    2017-07-28

    This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments.

  14. Seeding of silicon by copper ion implantation for selective electroless copper plating

    Energy Technology Data Exchange (ETDEWEB)

    Bhansali, S; Sood, D K; Zmood, R B [Microelectronic and Materials Technology Centre, Royal Melbourne Institute of Technolgy, Melbourne, VIC (Australia)

    1994-12-31

    We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm{sup 2} using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm{sup 2} for `seed` formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by `scotch tape test`. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs.

  15. Seeding of silicon by copper ion implantation for selective electroless copper plating

    Energy Technology Data Exchange (ETDEWEB)

    Bhansali, S.; Sood, D.K.; Zmood, R.B. [Microelectronic and Materials Technology Centre, Royal Melbourne Institute of Technolgy, Melbourne, VIC (Australia)

    1993-12-31

    We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm{sup 2} using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm{sup 2} for `seed` formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by `scotch tape test`. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs.

  16. Seeding of silicon by copper ion implantation for selective electroless copper plating

    International Nuclear Information System (INIS)

    Bhansali, S.; Sood, D.K.; Zmood, R.B.

    1993-01-01

    We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm 2 using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm 2 for 'seed' formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by 'scotch tape test'. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs

  17. Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

    2004-01-01

    Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

  18. Microstructure characterization of the soda-lime-glass/copper-indium-gallium-selenium interface in Cu-poor Cu(In,Ga)Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jian, E-mail: wangjustb@gmail.com; Qiao, Yi; Zhu, Jie, E-mail: jiezhu@ustb.edu.cn

    2015-05-29

    The microstructure characteristics of the soda-lime-glass/Cu(In,Ga)Se{sub 2} (SLG/CIGS) interface in Cu-poor CIGS films are investigated by transmission electron microscopy and selected area electronic diffraction (SAED). The SAED patterns show very sharp and strong spots, indicating the main structure of CIGS chalcopyrite. Small dispersed crystals with size distribution from 2 to 5 nm seem to be embedded in amorphous matrix, and additional spots indicate the presence of an ordered vacancy compound (OVC). This observation is consistent with the Raman results, and the OVC phase with the nanoclusters exists in the CIGS matrix, instead of layer structure. Lattice distortion results in local changes in contrast. Some pseudo-disordered structure is observed, however, the structure is actually the chalcopyrite CIGS structure. 180° rotation twins are also observed at the SLG/CIGS interface. Lattice distortion is widely observed at the interface of the Cu-poor CIGS films, and the extra spots could be caused by different lattice orientations. - Highlights: • Cu(In,Ga)Se{sub 2} (CIGS) were prepared on bare soda-lime-glass (SLG) substrates. • Microstructure of the SLG/CIGS interface was investigated. • An ordered vacancy compound (OVC) phase was observed. • The OVC phase with nanoclusters exists in the CIGS matrix, instead of layer structure. • 180° rotation twins were observed at the SLG/CIGS interface.

  19. Determination of Lead(II), Cadmium(II) and Copper(II) in Waste-Water and Soil Extracts on Mercury Film Screen-Printed Carbon Electrodes Sensor

    International Nuclear Information System (INIS)

    Mohd Fairulnizal Md Noh; Tothill, I.E.

    2011-01-01

    A sensor incorporating a three electrodes configuration have been fabricated using low cost screen-printing technology. These electrodes couples with Square Wave Stripping Voltammetry (SWSV) has provided a convenient screening tool for on-site detection of trace levels of Pb(II), Cd(II) and Cu(II). Modification of the graphite carbon surface based on in situ deposition of mercury film has been carried out. By appropriate choice of supporting medium and optimized parameters setting such as amount of mercury used the deposition potential, deposition time, frequency and scan rate, well resolved and reproducible response for Pb(II), Cd(II) and Cu(II) were obtained. The performance characteristics of the developed mercury film screen printed carbon electrode (MFSPCE) for 120 s deposition time showed that the linear range for Cd(II), Pb(II) and Cu(II) were 10 to 200 μg L -1 . The detection limit recorded for Cd(II), Pb(II) and Cu(II) were 2, 1 and 5 μg L -1 with relative standard deviation (RSD) of 6.5 %, 6.9 % and 7.5 %, respectively. Successful applications of the sensing device to waste-water and extracted soil samples were demonstrated. (author)

  20. Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    Treger, Mikhail; Noyan, I. C. [Department of Applied Physics and Applied Mathematics, Columbia University, New York 10027 (United States); Witt, Christian [GlobalFoundries, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Cabral, Cyril; Murray, Conal; Jordan-Sweet, Jean [IBM, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Rosenberg, Robert [State University of New York, the University at Albany, Albany, NY 12203 (United States); Eisenbraun, Eric [College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203 (United States)

    2013-06-07

    Concurrent in-situ four-point probe resistivity and high resolution synchrotron x-ray diffraction measurements were used to characterize room temperature recrystallization in electroplated Cu thin films. The x-ray data were used to obtain the variation with time of the integrated intensities and the peak-breadth from the Cu 111 and 200 reflections of the transforming grains. The variation of the integrated intensity and resistivity data with time was analyzed using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. For both 111-textured and non-textured electroplated Cu films, four-point probe resistivity measurements yielded shorter transformation times than the values obtained from the integrated intensities of the corresponding Cu 111 reflections. In addition, the JMAK exponents fitted to the resistivity data were significantly smaller. These discrepancies could be explained by considering the different material volumes from which resistivity and diffraction signals originated, and the physical processes which linked these signals to the changes in the evolving microstructure. Based on these issues, calibration of the resistivity analysis with direct structural characterization techniques is recommended.

  1. Fabrication of Elemental Copper by Intense Pulsed Light Processing of a Copper Nitrate Hydroxide Ink.

    Science.gov (United States)

    Draper, Gabriel L; Dharmadasa, Ruvini; Staats, Meghan E; Lavery, Brandon W; Druffel, Thad

    2015-08-05

    Printed electronics and renewable energy technologies have shown a growing demand for scalable copper and copper precursor inks. An alternative copper precursor ink of copper nitrate hydroxide, Cu2(OH)3NO3, was aqueously synthesized under ambient conditions with copper nitrate and potassium hydroxide reagents. Films were deposited by screen-printing and subsequently processed with intense pulsed light. The Cu2(OH)3NO3 quickly transformed in less than 100 s using 40 (2 ms, 12.8 J cm(-2)) pulses into CuO. At higher energy densities, the sintering improved the bulk film quality. The direct formation of Cu from the Cu2(OH)3NO3 requires a reducing agent; therefore, fructose and glucose were added to the inks. Rather than oxidizing, the thermal decomposition of the sugars led to a reducing environment and direct conversion of the films into elemental copper. The chemical and physical transformations were studied with XRD, SEM, FTIR and UV-vis.

  2. Antwerp Copper Plates

    DEFF Research Database (Denmark)

    Wadum, Jørgen

    1999-01-01

    In addition to presenting a short history of copper paintings, topics detail artists’ materials and techniques, as well as aspects of the copper industry, including mining, preparation and trade routes.......In addition to presenting a short history of copper paintings, topics detail artists’ materials and techniques, as well as aspects of the copper industry, including mining, preparation and trade routes....

  3. Surface Plasmon Polariton Resonance of Gold, Silver, and Copper Studied in the Kretschmann Geometry: Dependence on Wavelength, Angle of Incidence, and Film Thickness

    Science.gov (United States)

    Takagi, Kentaro; Nair, Selvakumar V.; Watanabe, Ryosuke; Seto, Keisuke; Kobayashi, Takayoshi; Tokunaga, Eiji

    2017-12-01

    Surface plasmon polariton (SPP) resonance spectra for noble metals (Au, Ag, and Cu) were comprehensively studied in the Kretschmann attenuated total reflection (ATR) geometry, in the wavelength (λ) range from 300 to 1000 nm with the angle of incidence (θ) ranging from 45 to 60° and the film thickness (d) ranging from 41 to 76 nm. The experimental plasmon resonance spectra were reproduced by a calculation that included the broadening effects as follows: (1) the imaginary part of the bulk dielectric constant, (2) the thickness-dependent radiative coupling of the SPP at the metal-air interface to the prism, (3) the lack of conservation of the wavevector parallel to the interface kx(k||) caused by the surface roughness, (4) scanning λ at a fixed θ (changing both energy and kx at the same time) over the SPP dispersion relation. For Au and Ag, the experimental results were in good agreement with the calculated results using the bulk dielectric constants, showing no film thickness dependence of the plasmon resonance energy. A method to extract the true width of the plasmon resonance from raw ATR spectra is proposed and the results are rigorously compared with those expected from the bulk dielectric function given in the literature. For Au and Ag, the width increases with energy, in agreement with that expected from the relaxation of bulk free electrons including the electron-electron interaction, but there is clear evidence of extra broadening, which is more significant for thinner films, possibly due to relaxation pathways intrinsic to plasmons near the interface. For Cu, the visibility of the plasmon resonance critically depends on the evaporation conditions, and low pressures and fast deposition rates are required. Otherwise, scattering from the surface roughness causes considerable broadening of the plasmon resonance, resulting in an apparently fixed resonance energy without clear incident angle dependence. For Cu, the observed plasmon dispersion agrees well with

  4. The Growth of Thin Epitaxial Copper Films on Ruthenium (0001)and Oxygen-Precovered Ruthenium (0001) as studied by X-ray Photoelectron diffraction

    International Nuclear Information System (INIS)

    Ruebush, Scott Daniel

    1997-01-01

    In the first part of this dissertation, the variation of mean emitter depths with direction for core photoelectron emission from single crystals, including the effects of both isotropic inelastic scattering and single and multiple elastic scattering was theoretically studied. The mean emitter depth was found to vary by as much as ±30% with direction. In the second part of this dissertation, x-ray photoelectron diffraction (XPD) was used to study the structure and growth mechanisms of Cu films grown on a clean and an oxygen-precovered Ru(OOO1) surface. Experimental Cu 2p3/2 (E kin = 556 eV) and Ru 3d (E kin = 1205 eV) intensities were measured for Cu coverages from submonolayer up to several monolayer (ML) on the clean Ru(OOO1) surface. In addition, the O 1s (E kin = 958 eV) intensity was measured for Cu grown on oxygen precovered Ru(OOO1). These XPD intensities have been analyzed using single scattering cluster (SSC) and multiple scattering cluster (MSC) models. The first Cu layer has been found to grow pseudomorphically on the Ru(OOO1) surface in agreement with prior studies of the Cu/Ru(OOO 1) system. Thus, the initial growth is layer-by-layer. For higher coverages, XPD shows that the short-range structure of the Cu films is fcc Cu(l 11), but with significant interlayer relaxation (compared to bulk Cu(l 11)) that persists up to ≥8 ML. When oxygen is preadsorbed on the Ru(OOO1) surface before Cu film growth (possibly to act as a surfactant promoting smoother growth), XPD shows that the first 3 ML of Cu grow as 3-D islands. In addition, XPD shows that, during Cu growth, all of the oxygen ''floats'' on the CU surface, in contrast to prior studies which found that 30% of the oxygen remains at the Cu/Ru intetiace. XPD also indicates that the oxygen is highly disordered on the Cu overlayer surface. In thicker layers with oxygen present, the Cu grows as Cu(l 11) with equal occupations of two possible domains rotated by 1800 from each other. In general, this work

  5. Copper and Copper Proteins in Parkinson's Disease

    Science.gov (United States)

    Rivera-Mancia, Susana; Diaz-Ruiz, Araceli; Tristan-Lopez, Luis; Rios, Camilo

    2014-01-01

    Copper is a transition metal that has been linked to pathological and beneficial effects in neurodegenerative diseases. In Parkinson's disease, free copper is related to increased oxidative stress, alpha-synuclein oligomerization, and Lewy body formation. Decreased copper along with increased iron has been found in substantia nigra and caudate nucleus of Parkinson's disease patients. Copper influences iron content in the brain through ferroxidase ceruloplasmin activity; therefore decreased protein-bound copper in brain may enhance iron accumulation and the associated oxidative stress. The function of other copper-binding proteins such as Cu/Zn-SOD and metallothioneins is also beneficial to prevent neurodegeneration. Copper may regulate neurotransmission since it is released after neuronal stimulus and the metal is able to modulate the function of NMDA and GABA A receptors. Some of the proteins involved in copper transport are the transporters CTR1, ATP7A, and ATP7B and the chaperone ATOX1. There is limited information about the role of those biomolecules in the pathophysiology of Parkinson's disease; for instance, it is known that CTR1 is decreased in substantia nigra pars compacta in Parkinson's disease and that a mutation in ATP7B could be associated with Parkinson's disease. Regarding copper-related therapies, copper supplementation can represent a plausible alternative, while copper chelation may even aggravate the pathology. PMID:24672633

  6. Separation of copper-64 from copper phthalocyanine

    International Nuclear Information System (INIS)

    Battaglin, R.I.M.

    1979-01-01

    The separation of copper-64 from irradiated copper phthalocyanine by Szilard-Chalmers effect is studied. Two methods of separation are used: one of them is based on the dissolution of the irradiated dry compound in concentrated sulfuric acid following its precipitation in water. In the other one the compound is irradiated with water in paste form following treatment with water and hydrochloric acid. The influence of the crystal form of the copper phthalocyanine on the separation yield of copper-64 is shown. Preliminary tests using the ionic exchange technique for purification and changing of copper-64 sulfate to chloride form are carried out. The specific activity using the spectrophotometric technique, after the determination of the copper concentration in solution of copper-64, is calculated. (Author) [pt

  7. Multilevel Dual Damascene copper interconnections

    Science.gov (United States)

    Lakshminarayanan, S.

    C, 500oC and 600oC for Ti, TiN and Ta barriers respectively. Via resistivity on the order of 10-9/ /Omegacm2 was measured for Cu/Ta/Cu interfaces and no degradation in the via resistance was observed upto 600oC on the 2 μm and 3 μm wide contact windows. Characterization of diode leakage and subthreshold currents of CMOS transistors fabricated with Ta adhesion layers, showed the failure of the Ta barrier at 450oC. Despite the good barrier performance of the CVD TiN films, obtaining low contact resistivity may be a concern. The potential use of Cu-Mg alloy as the backend metallization has also been studied. Fully encapsulated wiring has been fabricated by causing the Mg to out- diffuse towards the Cu/SiO2 interfaces and the free copper surface. The inter-connects exhibited good stability and oxidation resistance, but via resistances were extremely high, probably due to the presence of insulating films like MgO or MgF2 at the interface between the two metal levels. It may be possible to decrease the via resistance to values comparable to Cu/Ta/Cu by altering the process flow and using a suitable via clean. When used at the contact level, undesirable interaction with the CoSi2 film was observed at temperatures as low as 350oC. Another problem was the high contact resistance at the Cu-Mg/CoSi2 interface. Hence the use of this alloy as a contact fill material is not feasible at this time. An additional barrier layer may be required between the Cu-Mg and CoSi2 films to protect the integrity of the silicide and provide low contact resistance.

  8. Energy level alignment at the Si(1 1 1)/RCA–SiO2/copper(II) phthalocyanine ultra-thin film interface

    International Nuclear Information System (INIS)

    Krzywiecki, Maciej; Grządziel, Lucyna

    2014-01-01

    Graphical abstract: - Highlights: • The interface formation studies between CuPc and Si by photoemission methods. • Charge rearrangement detected at the inorganic/organic interface. • Existence of disordered/polarization layer at the initial stages of CuPc deposition. • Examined structures applicable for organic transistors development. - Abstract: The photoemission experimental techniques (i.e. ultraviolet photoelectron spectroscopy—UPS and X-ray photoelectron spectroscopy—XPS) were used to investigate the charge–rearrangement–related phenomena occuring at organic–inorganic semiconductor interface. Examined samples were copper phthalocyanine (CuPc) ultra-thin (up to 16 nm) layers deposited onto oxidized silicon Si(1 1 1) of n- and p-type of conductivity. The 1.3-nm-thick silicon oxide was prepared by means of RCA wet cleaning procedure. The analysis of the photoemission data (mainly UPS) suggested the existance of the polarization layer within first 3 nm of CuPc layer thickness. Basing on the UPS and XPS results the energy level diagrams of examined structures have been constructed. In present paper it is suggested that the existance of the polarization layer could be assigned to the disordered adsorption and continous molecular reorientation of the CuPc molecules during the interface formation process. In the terms of the lack of the charge transfer via substrate/organic overlayer interface and disordered adsorption the fluctuations of CuPc electronic parameters were detected. Moreover the ionization energy and the work function parameters of final CuPc layer were affected. The values were more consistent with those obtained for much thicker (over 500 nm) CuPc layers. Performed studies showed that contrary to CuPc layers deposited on native substrates (where the charge transfer via tunnelable oxide – determined as dipole effect – has been detected), the thicker RCA-prepared oxide seems to be non-tunnelable hence the possibility for Si(1 1 1

  9. Comparison of soil solution speciation and diffusive gradients in thin-films measurement as an indicator of copper bioavailability to plants.

    Science.gov (United States)

    Zhao, Fang-Jie; Rooney, Corinne P; Zhang, Hao; McGrath, Steve P

    2006-03-01

    The toxicity effect concentrations (10% effective concentration [EC10] and 50% effective concentration [EC50]) of total added Cu derived from barley root elongation and tomato growth assays varied widely among 18 European soils. We investigated whether this variation could be explained by the solubility or speciation of Cu in soil solutions or the diffusive gradients in thin-films (DGT) measurement. Solubility and Cu speciation varied greatly among the soils tested. However, the EC10 and EC50 of soil solution Cu or free Cu2+ activity varied even more widely than those based on the total added Cu, indicating that solubility or soil solution speciation alone could not explain intersoil variation in Cu toxicity. Estimated EC10 and EC50 of free Cu2+ activity correlated closely and negatively with soil pH, indicating a protective effect of H+, which is consistent with the biotic ligand model concept. The DGT measurement was found to narrow the intersoil variation in EC50 considerably and to be a better predictor of plant Cu concentrations than either soil solution Cu or free Cu2+ activity. We conclude that plant bioavailability of Cu in soil depends on Cu speciation, interactions with protective ions (particularly H+), and the resupply from the solid phase, and we conclude that the DGT measurement provides a useful indicator of Cu bioavailability in soil.

  10. Simultaneous Automatic Electrochemical Detection of Zinc, Cadmium, Copper and Lead Ions in Environmental Samples Using a Thin-Film Mercury Electrode and an Artificial Neural Network

    Directory of Open Access Journals (Sweden)

    Jiri Kudr

    2014-12-01

    Full Text Available In this study a device for automatic electrochemical analysis was designed. A three electrodes detection system was attached to a positioning device, which enabled us to move the electrode system from one well to another of a microtitre plate. Disposable carbon tip electrodes were used for Cd(II, Cu(II and Pb(II ion quantification, while Zn(II did not give signal in this electrode configuration. In order to detect all mentioned heavy metals simultaneously, thin-film mercury electrodes (TFME were fabricated by electrodeposition of mercury on the surface of carbon tips. In comparison with bare electrodes the TMFEs had lower detection limits and better sensitivity. In addition to pure aqueous heavy metal solutions, the assay was also performed on mineralized rock samples, artificial blood plasma samples and samples of chicken embryo organs treated with cadmium. An artificial neural network was created to evaluate the concentrations of the mentioned heavy metals correctly in mixture samples and an excellent fit was observed (R2 = 0.9933.

  11. Recent progress in copper antimony chalcogenides thin films and photovoltaic devices%铜锑硫族薄膜材料及其光伏器件研究进展

    Institute of Scientific and Technical Information of China (English)

    王冲; 杨波; 唐江

    2017-01-01

    薄膜太阳能电池具有材料用量少、生产耗能低、高温弱光发电性能好、易于建筑集成等优势,是非常有竞争力的光伏发电技术之一.铜锑硫族材料价格低廉、稳定性高、绿色无毒、原料丰富,且具有合适的禁带宽度和较大的吸光系数,理论转换效率可达30%以上,是非常有潜力的薄膜太阳能电池吸光层材料.本文综述了近年来铜锑硫族材料光伏领域的研究成果,重点介绍了材料的晶体结构、光电特性、制备方法以及光伏器件的研究进展,并对其发展趋势和下一步工作方向进行了总结和展望.%In recent years,owing its advantages such as high material utilization and low energy consumption during manufacturing,strong low light performance and high energy output during operation,and easy integration with buildings,thin film solar cell has become a very competitive technology for photovoltaic application.Particularly,copper antimony chalcogenides (Cu-Sb-S/Se) have attracted tremendous research attention as the promising absorber candidates because of the advantages of low cost,high stability and nontoxic composition,large absorption coefficient and appropriate band gap.In the Cu-Sb-S/Se system,there are four kinds of stoichiometric ratio phases with Cu:Sb:S/Se of 1:1:2,3:1:3;3:1:4 and 12:4:13.Among them,CuSbS2 and CuSbSe2 have appropriate bandgaps of ~1.5 and ~1.1 eV,large absorption coefficient of ~ 105 cm-1,which is larger than CuInSe2,and low grain growth temperature (about 300-400℃C).Theoretical calculations indicate that CuSbS2 and CuSbSe2 solar cells have higher theoretical maximum efficiency than CuInSe2,and the majority defects are shallow defects.Various approaches have been explored to fabricate CuSbS2 and CuSbSe2 thin films,including direct thermal evaporation,post-annealing after chemical bath deposition,spray pyrolysis,electrodeposition,magnetron sputtering and so on.In the last few years,several groups have

  12. Flash light sintered copper precursor/nanoparticle pattern with high electrical conductivity and low porosity for printed electronics

    International Nuclear Information System (INIS)

    Chung, Wan-Ho; Hwang, Hyun-Jun; Kim, Hak-Sung

    2015-01-01

    In this work, the hybrid copper inks with precursor and nanoparticles were fabricated and sintered via flash light irradiation to achieve highly conductive electrode pattern with low porosity. The hybrid copper ink was made of copper nanoparticles and various copper precursors (e.g., copper(II) chloride, copper(II) nitrate trihydrate, copper(II) sulfate pentahydrate and copper(II) trifluoroacetylacetonate). The printed hybrid copper inks were sintered at room temperature and under ambient conditions using an in-house flash light sintering system. The effects of copper precursor weight fraction and the flash light irradiation conditions (light energy and pulse duration) were investigated. Surfaces of the sintered hybrid copper patterns were analyzed using a scanning electron microscope. Also, spectroscopic characterization techniques such as Fourier transform infrared spectroscopy and X-ray diffraction were used to investigate the crystal phases of the flash light sintered copper precursors. High conductivity hybrid copper patterns (27.3 μΩ cm), which is comparable to the resistivity of bulk copper (1.68 μΩ cm) were obtained through flash light sintering at room temperature and under ambient conditions. - Highlights: • The hybrid copper inks with precursor and nanoparticles were fabricated. • The hybrid copper ink was sintered via flash light irradiation. • The resistivity of sintered hybrid copper ink was 27.3 μΩ cm. • Highly conductive copper film with low porosity could be achieved

  13. Flash light sintered copper precursor/nanoparticle pattern with high electrical conductivity and low porosity for printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Wan-Ho; Hwang, Hyun-Jun [Department of Mechanical Convergence Engineering, Hanyang University, 17 Haendang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Kim, Hak-Sung, E-mail: kima@hanyang.ac.kr [Department of Mechanical Convergence Engineering, Hanyang University, 17 Haendang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-04-01

    In this work, the hybrid copper inks with precursor and nanoparticles were fabricated and sintered via flash light irradiation to achieve highly conductive electrode pattern with low porosity. The hybrid copper ink was made of copper nanoparticles and various copper precursors (e.g., copper(II) chloride, copper(II) nitrate trihydrate, copper(II) sulfate pentahydrate and copper(II) trifluoroacetylacetonate). The printed hybrid copper inks were sintered at room temperature and under ambient conditions using an in-house flash light sintering system. The effects of copper precursor weight fraction and the flash light irradiation conditions (light energy and pulse duration) were investigated. Surfaces of the sintered hybrid copper patterns were analyzed using a scanning electron microscope. Also, spectroscopic characterization techniques such as Fourier transform infrared spectroscopy and X-ray diffraction were used to investigate the crystal phases of the flash light sintered copper precursors. High conductivity hybrid copper patterns (27.3 μΩ cm), which is comparable to the resistivity of bulk copper (1.68 μΩ cm) were obtained through flash light sintering at room temperature and under ambient conditions. - Highlights: • The hybrid copper inks with precursor and nanoparticles were fabricated. • The hybrid copper ink was sintered via flash light irradiation. • The resistivity of sintered hybrid copper ink was 27.3 μΩ cm. • Highly conductive copper film with low porosity could be achieved.

  14. Improvement of oxidation resistance of copper by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Cheng, T.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Lin, M.C. [Research Center for Biomedical Devices and Prototyping Production, Taipei Medical University, No. 250, Wu-Hsing Street, Taipei 110, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2012-10-01

    Graphical abstract: Results of glancing incident angle diffraction (GIXD) show the bare-Cu specimen was attacked by oxidation, whereas the coated-Cu specimens prevented from this problem. Highlights: Black-Right-Pointing-Pointer Deposition of Al{sub 2}O{sub 3} films on pure copper by an atomic layer deposition (ALD) technique. Black-Right-Pointing-Pointer Analysis of properties of the films coated at various substrate temperatures using the ALD technique. Black-Right-Pointing-Pointer Identification of the improvement of oxidation resistance of pure copper by the ALD-Al{sub 2}O{sub 3} films. Black-Right-Pointing-Pointer Assessment of the durability of the ALD-Al{sub 2}O{sub 3} films by adhesion strength. - Abstract: Al{sub 2}O{sub 3} films were deposited by the atomic layer deposition (ALD) technique onto pure copper at temperatures in the range 100-200 Degree-Sign C. The chemical composition, microstructure, and mechanic properties of the ALD-deposited Al{sub 2}O{sub 3} films were systematically analyzed. The variations in the film characteristics with substrate temperature were observed. Oxidation trials revealed that 20-nm-thick Al{sub 2}O{sub 3} films deposited at a substrate temperature as low as 100 Degree-Sign C suppress oxidative attack on pure copper. The Al{sub 2}O{sub 3} films also showed excellent durability of adhesion strength, according to predictions using the Coffin-Manson model based on the results of accelerated temperature cycling tests. These features indicate that ALD-deposited Al{sub 2}O{sub 3} film is a very promising candidate to be a protective coating for pure copper.

  15. Selective LPCVD growth of graphene on patterned copper and its growth mechanism

    Science.gov (United States)

    Zhang, M.; Huang, B.-C.; Wang, Y.; Woo, J. C. S.

    2016-12-01

    Copper-catalyzed graphene low-pressure chemical-vapor deposition (LPCVD) growth has been regarded as a viable solution towards its integration to CMOS technology, and the wafer-bonding method provides a reliable alternative for transferring the selective graphene grown on a patterned metal film for IC manufacturing. In this paper, selective LPCVD graphene growth using patterned copper dots has been studied. The Raman spectra of grown films have demonstrated large dependence on the growth conditions. To explain the results, the growth mechanisms based on surface adsorption and copper-vapor-assisted growth are investigated by the comparison between the blanket copper films with/without the additional copper source. The copper vapor density is found to be critical for high-quality graphene growth. In addition, the copper-vapor-assisted growth is also evidenced by the carbon deposition on the SiO2 substrate of the patterned-copper-dot sample and chamber wall during graphene growth. This growth mechanism explains the correlation between the growth condition and Raman spectrum for films on copper dots. The study on the copper-catalyzed selective graphene growth on the hard substrate paves the way for the synthesis and integration of the 2D material in VLSI.

  16. Aquatic Life Criteria - Copper

    Science.gov (United States)

    Documents pertain to Aquatic Life Ambient Water Quality criteria for Copper (2007 Freshwater, 2016 Estuarine/marine). These documents contain the safe levels of Copper in water that should protect to the majority of species.

  17. Copper Bioleaching in Chile

    OpenAIRE

    Juan Carlos Gentina; Fernando Acevedo

    2016-01-01

    Chile has a great tradition of producing and exporting copper. Over the last several decades, it has become the first producer on an international level. Its copper reserves are also the most important on the planet. However, after years of mineral exploitation, the ease of extracting copper oxides and ore copper content has diminished. To keep the production level high, the introduction of new technologies has become necessary. One that has been successful is bioleaching. Chile had the first...

  18. Demystifying Controlling Copper Corrosion

    Science.gov (United States)

    The LCR systematically misses the highest health and corrosion risk sites for copper. Additionally, there are growing concerns for WWTP copper in sludges and discharge levels. There are many corrosion control differences between copper and lead. This talk explains the sometimes c...

  19. Liquid-film assisted formation of alumina/niobium interfaces

    OpenAIRE

    Sugar, Joshua D.; McKeown, Joseph T.; Marks, Robert A.; Glaeser, Andreas M.

    2002-01-01

    Alumina has been joined at 1400 degrees C using niobium-based interlayers. Two different joining approaches were compared: solid-state diffusion bonding using a niobium foil as an interlayer, and liquid-film assisted bonding using a multilayer copper/niobium/copper interlayer. In both cases, a 127-(mu)m thick niobium foil was used; =1.4-(mu)m or =3-(mu)m thick copper films flanked the niobium. Room-temperature four-point bend tests showed that the introduction of a copper film had a significa...

  20. Auger electron and X-ray photoelectron spectroscopic study of the biocorrosion of copper by alginic acid polysaccharide

    Science.gov (United States)

    Jolley, John G.; Geesey, Gill G.; Hankins, Michael R.; Wright, Randy B.; Wichlacz, Paul L.

    1989-08-01

    Thin films (3.4 nm) of copper on germanium substrates were exposed to 2% alginic acid polysaccharide aqueous solution. Pre- and post-exposure characterization were done by Auger electron spectroscopy and X-ray photoelectron spectroscopy. Ancillary graphite furnace atomic absorption spectroscopy was used to monitor the removal process of the copper thin film from the germanium substrate. Results indicate that some of the copper was oxidized by the alginic acid solution. Some of the copper was removed from the Cu/Ge interface and incorporated into the polymer matrix. Thus, biocorrosion of copper was exhibited by the alginic acid polysaccharide.

  1. Application of HTSC-thin films in microwave bandpass filters

    International Nuclear Information System (INIS)

    Jha, A.R.

    1993-01-01

    This paper reveals unique performance capabilities of High-Temperature Superconducting Thin-Film (HTSCTFs) for possible applications in microwave bandpass filters (BPFs). Microwave filters fabricated with HTSCTFs have demonstrated lowest insertion loss, highest rejection, and sharpest skirt selectivity. Thin films of Yttrium Barium Copper Oxide (YBCO), Bismuth Strontium Calcium Copper Oxide (BSCCO) and Thallium Calcium Barium Copper Oxide (TCBCO) will be most attractive for filters

  2. Fabrication of thick superconducting films by decantation

    Directory of Open Access Journals (Sweden)

    Julián Betancourt M.

    1991-07-01

    Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

  3. Copper electrodeposition from an acidic plating bath containing accelerating and inhibiting organic additives

    International Nuclear Information System (INIS)

    Pasquale, M.A.; Gassa, L.M.; Arvia, A.J.

    2008-01-01

    Copper electrodeposition on copper from still plating solutions of different compositions was investigated utilising electrochemical impedance spectroscopy (EIS), cyclic voltammetry, and scanning electron microscopy (SEM). An acid copper sulphate plating base solution was employed either with or without sodium chloride in the presence of a single additive, either polyethylene glycol (PEG) or 3-mercapto-2-propanesulphonic acid (MPSA), and their mixture. Thallium underpotential deposition/anodic stripping was employed to determine the adsorption capability of additives on copper. In the absence of chloride ions, MPSA shows a moderate adsorption on copper, whereas PEG is slightly adsorbed. At low cathodic overpotentials, the simultaneous presence of MPSA and chloride ions accelerates copper electrodeposition through the formation of an MPSA-chloride ion complex in the solution, particularly for about 220 μM sodium chloride. The reverse effect occurs in PEG-sodium chloride plating solutions. In this case, from EIS data the formation of a film that interferes with copper electrodeposition can be inferred. At higher cathodic overpotentials, when copper electrodeposition is under mass transport control, the cathode coverage by a PEG-copper chloride-mediated film becomes either partially or completely detached as the concentration of chloride ions at the negatively charged copper surface diminishes. The copper cathode grain topography at the μm scale depends on the cathodic overpotential, plating solution composition and average current density. Available data about the solution constituents and their adsorption on copper make it possible to propose a likely complex mechanism to understand copper electrodeposition from these media, including the accelerating effect of MPSA and the dynamics of PEG-copper chloride complex adsorbate interfering with the surface mobility of depositing copper ad-ions/ad-atoms

  4. Smoothing an isolated interface of cobalt-copper under irradiation by low-energy argon ions

    International Nuclear Information System (INIS)

    Stognij, A.I.; Novitskij, N.N.; Stukalov, O.M.

    2003-01-01

    Multilayer film structures, i.e. gold layer-copper-cobalt, are considered. It is shown that the structure, where cobalt surface prior to copper layer deposition was subjected to additional irradiation by a flow of argon ions, features the smoothest surface. The conclusion is made about smoothing out of cobalt-copper interface as a result of multiple collisions of argon slow ions and cobalt atoms during braking within two or three upper atomic rows of the cobalt layer [ru

  5. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  6. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    OpenAIRE

    Terence K. S. Wong; Siarhei Zhuk; Saeid Masudy-Panah; Goutam K. Dalapati

    2016-01-01

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion e...

  7. Anodic polarization behavior of pure copper in carbonate solutions

    International Nuclear Information System (INIS)

    Kawasaki, Manabu; Taniguchi, Naoki; Naitou, Morimasa

    2008-03-01

    Copper is one of the candidate materials for overpacks. The redox condition at the early stage of the post closure will be oxidizing. In order to understand the influence of environmental factors on the corrosion behavior of copper in such oxidizing environment, anodic polarization tests were performed in carbonate aqueous solution with varying the concentration of representative chemical species in groundwater. As the results of potentiodynamic and potentiostatic tests, anodic polarization behavior of pure copper was summarized as follows; Carbonate ion and bicarbonate ion promoted the passivation of pure copper, and suppressed the initiation of film breakdown. Chloride ion promoted both the active dissolution and initiation of film breakdown of pure copper. The influence of sulfate ion and pH was small, but the action of sulfate ion to the pure copper was similar to that of chloride ion, and the increase of pH was likely to promote the passivation and suppress the initiation of film breakdown. The film breakdown potential, Eb, was represented as a function of the ratio of aggressive ion and inhibiting ion such as [Cl - ]/[HCO 3 - ], [SO 4 2- ]/[HCO 3 - ]. When the ratio exceeds a certain value, the anodic polarization curve becomes active dissolution type so that no macroscopic film breakdown can not be occurred. The lower limit of Eb in passive type region was estimated to be about -200 mV vs. SCE. As the results of potentio static tests, the corrosion form near the Eb was uniform dissolution over the surface, but pitting corrosion and non-uniform corrosion occurred according to the condition of the test solution. Neither pitting corrosion nor non-uniform corrosion occurred at the potential below Eb in every test cases. (author)

  8. Copper and silver halates

    CERN Document Server

    Woolley, EM; Salomon, M

    2013-01-01

    Copper and Silver Halates is the third in a series of four volumes on inorganic metal halates. This volume presents critical evaluations and compilations for halate solubilities of the Group II metals. The solubility data included in this volume are those for the five compounds, copper chlorate and iodate, and silver chlorate, bromate and iodate.

  9. Deposition of copper coatings in a magnetron with liquid target

    Energy Technology Data Exchange (ETDEWEB)

    Tumarkin, A. V., E-mail: sanyahrustal@mail.ru; Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2015-12-15

    Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to–400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

  10. Effect of Copper on the Carrier Lifetime in Black Silicon

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Persheyev, Saydulla

    2011-01-01

    Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a......-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced....

  11. Influence of branched quaternary ammonium surfactant molecules as levelers for copper electroplating from acidic sulfate bath

    International Nuclear Information System (INIS)

    Wang, An-yin; Chen, Biao; Fang, Lei; Yu, Jian-jun; Wang, Li-min

    2013-01-01

    A family of branched quaternary ammonium surfactants (compounds 1a–1c) with different carbon chains were synthesized for levelers applied in copper electroplating. Their inhibitory actions on copper electroplating were characterized by cyclic voltammetry (CV). Compound 1b, as representative structure type, was tested by means of different electrochemical methods including CV, polarization curve and electrochemical impedance spectroscopy (EIS) with different concentrations. The interaction between compound 1b and copper surface was investigated using atomic force microscope (AFM) and X-ray photoelectron spectra (XPS). The results indicated that our newly synthesized compounds, particular 1b, were effective levelers used for copper electroplating. Compound 1b could adsorb on copper surface to form an adsorption layer. The adsorption behavior of compound 1b on copper surface indicated that compound 1b could inhibit the copper electrodeposition, which provided favorable conditions used as a leveler. Moreover, the addition of compound 1b could increase the cathodic polarization, which was attributed to the adsorption of compound 1b during copper electroplating process. In addition, various surface morphologies and crystalline orientation of the plated copper films caused by different concentrations of compound 1b were characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. Effects of compound 1b on refining the grain size and changing the preferential orientation of the plated copper films were exhibited

  12. Superconducting Electronic Film Structures

    Science.gov (United States)

    1991-02-14

    Segmuller, A., Cooper, E.I., Chisholm, M.F., Gupta, A. Shinde, S., and Laibowitz, R.B. Lanthanum gallate substrates for epitaxial high-T superconducting thin...M. F. Chisholm, A. Gupta, S. Shinde, and R. B. Laibowitz, " Lanthanum Gallate Substrates for Epitaxial High-T c Superconducting Thin Films," Appl...G. Forrester and J. Talvacchio, " Lanthanum Copper Oxide Buffer Layers for Growth of High-T c Superconductor Films," Disclosure No. RDS 90-065, filed

  13. SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay l

    2014-02-07

    Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

  14. Stress corrosion cracking of copper canisters

    International Nuclear Information System (INIS)

    King, Fraser; Newman, Roger

    2010-12-01

    A critical review is presented of the possibility of stress corrosion cracking (SCC) of copper canisters in a deep geological repository in the Fennoscandian Shield. Each of the four main mechanisms proposed for the SCC of pure copper are reviewed and the required conditions for cracking compared with the expected environmental and mechanical loading conditions within the repository. Other possible mechanisms are also considered, as are recent studies specifically directed towards the SCC of copper canisters. The aim of the review is to determine if and when during the evolution of the repository environment copper canisters might be susceptible to SCC. Mechanisms that require a degree of oxidation or dissolution are only possible whilst oxidant is present in the repository and then only if other environmental and mechanical loading conditions are satisfied. These constraints are found to limit the period during which the canisters could be susceptible to cracking via film rupture (slip dissolution) or tarnish rupture mechanisms to the first few years after deposition of the canisters, at which time there will be insufficient SCC agent (ammonia, acetate, or nitrite) to support cracking. During the anaerobic phase, the supply of sulphide ions to the free surface will be transport limited by diffusion through the highly compacted bentonite. Therefore, no HS. will enter the crack and cracking by either of these mechanisms during the long term anaerobic phase is not feasible. Cracking via the film-induced cleavage mechanism requires a surface film of specific properties, most often associated with a nano porous structure. Slow rates of dissolution characteristic of processes in the repository will tend to coarsen any nano porous layer. Under some circumstances, a cuprous oxide film could support film-induced cleavage, but there is no evidence that this mechanism would operate in the presence of sulphide during the long-term anaerobic period because copper sulphide

  15. Stress corrosion cracking of copper canisters

    Energy Technology Data Exchange (ETDEWEB)

    King, Fraser (Integrity Corrosion Consulting Limited (Canada)); Newman, Roger (Univ. of Toronto (Canada))

    2010-12-15

    A critical review is presented of the possibility of stress corrosion cracking (SCC) of copper canisters in a deep geological repository in the Fennoscandian Shield. Each of the four main mechanisms proposed for the SCC of pure copper are reviewed and the required conditions for cracking compared with the expected environmental and mechanical loading conditions within the repository. Other possible mechanisms are also considered, as are recent studies specifically directed towards the SCC of copper canisters. The aim of the review is to determine if and when during the evolution of the repository environment copper canisters might be susceptible to SCC. Mechanisms that require a degree of oxidation or dissolution are only possible whilst oxidant is present in the repository and then only if other environmental and mechanical loading conditions are satisfied. These constraints are found to limit the period during which the canisters could be susceptible to cracking via film rupture (slip dissolution) or tarnish rupture mechanisms to the first few years after deposition of the canisters, at which time there will be insufficient SCC agent (ammonia, acetate, or nitrite) to support cracking. During the anaerobic phase, the supply of sulphide ions to the free surface will be transport limited by diffusion through the highly compacted bentonite. Therefore, no HS. will enter the crack and cracking by either of these mechanisms during the long term anaerobic phase is not feasible. Cracking via the film-induced cleavage mechanism requires a surface film of specific properties, most often associated with a nano porous structure. Slow rates of dissolution characteristic of processes in the repository will tend to coarsen any nano porous layer. Under some circumstances, a cuprous oxide film could support film-induced cleavage, but there is no evidence that this mechanism would operate in the presence of sulphide during the long-term anaerobic period because copper sulphide

  16. Copper carrier protein in copper toxic sheep liver

    Energy Technology Data Exchange (ETDEWEB)

    Harris, A L; Dean, P D.G.

    1973-01-01

    The livers of copper-toxic sheep have been analyzed by gel electrophoresis followed by staining the gels for copper with diethyldithiocarbamate and for protein with amido schwartz. These gels were compared with similar gels obtained from the livers of normal and copper-deficient animals. The copper-toxic livers contained an extra protein band which possessed relatively weakly bound copper. Possible origins of this protein are discussed. 8 references, 1 figure, 2 tables.

  17. COPPER CABLE RECYCLING TECHNOLOGY

    International Nuclear Information System (INIS)

    Chelsea Hubbard

    2001-01-01

    The United States Department of Energy (DOE) continually seeks safer and more cost-effective technologies for use in deactivation and decommissioning (D and D) of nuclear facilities. The Deactivation and Decommissioning Focus Area (DDFA) of the DOE's Office of Science and Technology (OST) sponsors large-scale demonstration and deployment projects (LSDDPs). At these LSDDPs, developers and vendors of improved or innovative technologies showcase products that are potentially beneficial to the DOE's projects and to others in the D and D community. Benefits sought include decreased health and safety risks to personnel and the environment, increased productivity, and decreased costs of operation. The Idaho National Engineering and Environmental Laboratory (INEEL) generated a list of statements defining specific needs and problems where improved technology could be incorporated into ongoing D and D tasks. One such need is to reduce the volume of waste copper wire and cable generated by D and D. Deactivation and decommissioning activities of nuclear facilities generates hundreds of tons of contaminated copper cable, which are sent to radioactive waste disposal sites. The Copper Cable Recycling Technology separates the clean copper from contaminated insulation and dust materials in these cables. The recovered copper can then be reclaimed and, more importantly, landfill disposal volumes can be reduced. The existing baseline technology for disposing radioactively contaminated cables is to package the cables in wooden storage boxes and dispose of the cables in radioactive waste disposal sites. The Copper Cable Recycling Technology is applicable to facility decommissioning projects at many Department of Energy (DOE) nuclear facilities and commercial nuclear power plants undergoing decommissioning activities. The INEEL Copper Cable Recycling Technology Demonstration investigated the effectiveness and efficiency to recycle 13.5 tons of copper cable. To determine the effectiveness

  18. Canine Copper-Associated Hepatitis

    NARCIS (Netherlands)

    Dirksen, Karen; Fieten, Hille

    2017-01-01

    Copper-associated hepatitis is recognized with increasing frequency in dogs. The disease is characterized by centrolobular hepatic copper accumulation, leading to hepatitis and eventually cirrhosis. The only way to establish the diagnosis is by histologic assessment of copper distribution and copper

  19. Posttranslational regulation of copper transporters

    NARCIS (Netherlands)

    van den Berghe, P.V.E.

    2009-01-01

    The transition metal copper is an essential cofactor for many redox-active enzymes, but excessive copper can generate toxic reactive oxygen species. Copper homeostasis is maintained by highly conserved proteins, to balance copper uptake, distribution and export on the systemic and cellular level.

  20. Fabricating Copper Nanotubes by Electrodeposition

    Science.gov (United States)

    Yang, E. H.; Ramsey, Christopher; Bae, Youngsam; Choi, Daniel

    2009-01-01

    Copper tubes having diameters between about 100 and about 200 nm have been fabricated by electrodeposition of copper into the pores of alumina nanopore membranes. Copper nanotubes are under consideration as alternatives to copper nanorods and nanowires for applications involving thermal and/or electrical contacts, wherein the greater specific areas of nanotubes could afford lower effective thermal and/or electrical resistivities. Heretofore, copper nanorods and nanowires have been fabricated by a combination of electrodeposition and a conventional expensive lithographic process. The present electrodeposition-based process for fabricating copper nanotubes costs less and enables production of copper nanotubes at greater rate.

  1. Low-cost optical fabrication of flexible copper electrode via laser-induced reductive sintering and adhesive transfer

    Science.gov (United States)

    Back, Seunghyun; Kang, Bongchul

    2018-02-01

    Fabricating copper electrodes on heat-sensitive polymer films in air is highly challenging owing to the need of expensive copper nanoparticles, rapid oxidation of precursor during sintering, and limitation of sintering temperature to prevent the thermal damage of the polymer film. A laser-induced hybrid process of reductive sintering and adhesive transfer is demonstrated to cost-effectively fabricate copper electrode on a polyethylene film with a thermal resistance below 100 °C. A laser-induced reductive sintering process directly fabricates a high-conductive copper electrode onto a glass donor from copper oxide nanoparticle solution via photo-thermochemical reduction and agglomeration of copper oxide nanoparticles. The sintered copper patterns were transferred in parallel to a heat-sensitive polyethylene film through self-selective surface adhesion of the film, which was generated by the selective laser absorption of the copper pattern. The method reported here could become one of the most important manufacturing technologies for fabricating low-cost wearable and disposable electronics.

  2. Effect of grain size on corrosion of nanocrystalline copper in NaOH solution

    International Nuclear Information System (INIS)

    Luo Wei; Xu Yimin; Wang Qiming; Shi Peizhen; Yan Mi

    2010-01-01

    Research highlights: → Coppers display an active-passive-transpassive behaviour with duplex passive film. → Grain size variation has little effect on the overall corrosion behaviour of Cu. → Little effect on corrosion may be due to duplex passivation in NaOH solution. → Bulk nanocrystalline Cu show bamboo-like flake corrosion structure. - Abstract: Effect of grain size on corrosion of bulk nanocrystalline copper was investigated using potentiodynamic polarization measurements in 0.1 M NaOH solution. Bulk nanocrystalline copper was prepared by inert gas condensation and in situ warm compress (IGCWC) method. The grain sizes of all bulk nanocrystalline samples were determined to be 48, 68 and 92 nm using X-ray diffraction (XRD). Results showed that bulk coppers displayed an active-passive-transpassive behaviour with duplex passive films. From polycrystalline to nanocrystalline, grain size variation showed little effect on the overall corrosion resistance of copper samples.

  3. Micromachining with copper lasers

    Science.gov (United States)

    Knowles, Martyn R. H.; Bell, Andy; Foster-Turner, Gideon; Rutterford, Graham; Chudzicki, J.; Kearsley, Andrew J.

    1997-04-01

    In recent years the copper laser has undergone extensive development and has emerged as a leading and unique laser for micromachining. The copper laser is a high average power (10 - 250 W), high pulse repetition rate (2 - 32 kHz), visible laser (511 nm and 578 nm) that produces high peak power (typically 200 kW), short pulses (30 ns) and very good beam quality (diffraction limited). This unique set of laser parameters results in exceptional micro-machining in a wide variety of materials. Typical examples of the capabilities of the copper laser include the drilling of small holes (10 - 200 micrometer diameter) in materials as diverse as steel, ceramic, diamond and polyimide with micron precision and low taper (less than 1 degree) cutting and profiling of diamond. Application of the copper laser covers the electronic, aerospace, automotive, nuclear, medical and precision engineering industries.

  4. Homogeneous weldings of copper

    International Nuclear Information System (INIS)

    Campurri, C.; Lopez, M.; Fernandez, R.; Osorio, V.

    1995-01-01

    This research explored the metallurgical and mechanical properties of arc welding of copper related with influence of Argon, Helium and mixtures of them. Copper plates of 6 mm thickness were welded with different mixtures of the mentioned gases. The radiography of welded specimens with 100% He and 100% Ar does not show show any porosity. On the other hand, the copper plates welded different gas mixtures presented uniform porosity in the welded zone. The metallographies show recrystallized grain in the heat affected zone, while the welding zone showed a dendritic structure. The results of the tensile strength vary between a maximum of 227 MPa for 100% He and a minimum of 174 MOa for the mixture of 60% He and 40% Ar. For the elongation after fracture the best values, about 36%, were obtained for pure gases. As a main conclusion, we can say that arc welding of copper is possible without loosing the mechanical and metallurgical properties of base metal. 6 refs

  5. copper(II)

    Indian Academy of Sciences (India)

    Unknown

    bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) ... Abstract. Equilibrium concentrations of various condensed and gaseous phases have been thermodyna- ... phere, over a wide range of substrate temperatures and total reactor pressures.

  6. Bacterial Killing by Dry Metallic Copper Surfaces▿

    OpenAIRE

    Santo, Christophe Espírito; Lam, Ee Wen; Elowsky, Christian G.; Quaranta, Davide; Domaille, Dylan W.; Chang, Christopher J.; Grass, Gregor

    2010-01-01

    Metallic copper surfaces rapidly and efficiently kill bacteria. Cells exposed to copper surfaces accumulated large amounts of copper ions, and this copper uptake was faster from dry copper than from moist copper. Cells suffered extensive membrane damage within minutes of exposure to dry copper. Further, cells removed from copper showed loss of cell integrity. Acute contact with metallic copper surfaces did not result in increased mutation rates or DNA lesions. These findings are important fir...

  7. Effect of Sulfide Concentration on Copper Corrosion in Anoxic Chloride-Containing Solutions

    Science.gov (United States)

    Kong, Decheng; Dong, Chaofang; Xu, Aoni; Man, Cheng; He, Chang; Li, Xiaogang

    2017-04-01

    The structure and property of passive film on copper are strongly dependent on the sulfide concentration; based on this, a series of electrochemical methods were applied to investigate the effect of sulfide concentration on copper corrosion in anaerobic chloride-containing solutions. The cyclic voltammetry and x-ray photoelectron spectroscopy analysis demonstrated that the corrosion products formed on copper in anaerobic sulfide solutions comprise Cu2S and CuS. And the corrosion resistance of copper decreased with increasing sulfide concentration and faster sulfide addition, owing to the various structures of the passive films observed by the atomic force microscope and scanning electron microscope. A p-type semiconductor character was obtained under all experimental conditions, and the defect concentration, which had a magnitude of 1022-1023 cm-3, increased with increasing sulfide concentration, resulting in a higher rate of both film growth and dissolution.

  8. LEP copper accelerating cavities

    CERN Multimedia

    Laurent Guiraud

    1999-01-01

    These copper cavities were used to generate the radio frequency electric field that was used to accelerate electrons and positrons around the 27-km Large Electron-Positron (LEP) collider at CERN, which ran from 1989 to 2000. The copper cavities were gradually replaced from 1996 with new superconducting cavities allowing the collision energy to rise from 90 GeV to 200 GeV by mid-1999.

  9. Copper intoxication in sheep

    Energy Technology Data Exchange (ETDEWEB)

    Gazaryan, V.S.; Sogoyan, I.S.; Agabalov, G.A.; Mesropyan, V.V.

    1966-01-01

    Of 950 sheep fed hay from a vineyard sprayed regularly with copper sulfate, 143 developed clinical copper poisoning and 103 died. The Cu content of the hay was 10.23 mg%, of the liver of dead sheep 17-52 mg%, and of the blood serum of affected sheep 0.86 mg%. The symptoms and the histological findings in kidneys and liver are described.

  10. Dynamics of the evaporative dewetting of a volatile liquid film confined within a circular ring.

    Science.gov (United States)

    Sun, Wei; Yang, Fuqian

    2015-04-07

    The dewetting dynamics of a toluene film confined within a copper ring on a deformable PMMA film is studied. The toluene film experiences evaporation and dewetting, which leads to the formation of a circular contact line around the center of the copper ring. The contact line recedes smoothly toward the copper ring at a constant velocity until reaching a dynamic "stick" state to form the first circular polymer ridge. The average receding velocity is found to be dependent on the dimensions of the copper ring (the copper ring diameter and the cross-sectional diameter of the copper wire) and the thickness of the PMMA films. A model is presented to qualitatively explain the evaporative dewetting phenomenon.

  11. Copper wire bonding

    CERN Document Server

    Chauhan, Preeti S; Zhong, ZhaoWei; Pecht, Michael G

    2014-01-01

    This critical volume provides an in-depth presentation of copper wire bonding technologies, processes and equipment, along with the economic benefits and risks.  Due to the increasing cost of materials used to make electronic components, the electronics industry has been rapidly moving from high cost gold to significantly lower cost copper as a wire bonding material.  However, copper wire bonding has several process and reliability concerns due to its material properties.  Copper Wire Bonding book lays out the challenges involved in replacing gold with copper as a wire bond material, and includes the bonding process changes—bond force, electric flame off, current and ultrasonic energy optimization, and bonding tools and equipment changes for first and second bond formation.  In addition, the bond–pad metallurgies and the use of bare and palladium-coated copper wires on aluminum are presented, and gold, nickel and palladium surface finishes are discussed.  The book also discusses best practices and re...

  12. Improvement of the adhesion strength between copper plated layer and resin substrate using a chemically adsorbed monolayer

    Directory of Open Access Journals (Sweden)

    Tsuchiya K.

    2013-08-01

    Full Text Available With reducing the size and weight of electric devices, high-tensile, light and fine copper wire is demanded. So the production technique of a copper wire plated on a super fiber resin (Vectran film was researched for improving the adhesion strength between the copper and the resin. In this study, we used the Cu2+ or Pd2+ complex prepared with a chemically adsorbed monolayer (CAM to improve the adhesion strength between the copper plated layer and the Vectran film. As the result of scotch tape test, it was observed that the adhesion strength between the copper plated layer and Vectran film was improved by the Cu2+ or Pd2+ complex CAM.

  13. Effect of contact angle hysteresis on moving liquid film integrity.

    Science.gov (United States)

    Simon, F. F.; Hsu, Y. Y.

    1972-01-01

    A study was made of the formation and breakdown of a water film moving over solid surfaces (teflon, lucite, stainless steel, and copper). The flow rate associated with film formation was found to be higher than the flow rate at which film breakdown occurred. The difference in the flow rates for film formation and film breakdown was attributed to contact angle hysteresis. Analysis and experiment, which are in good agreement, indicated that film formation and film breakdown are functions of the advancing and receding angles, respectively.

  14. Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

    Science.gov (United States)

    Narula, Udit; Tan, Cher Ming; Lai, Chao Sung

    2017-03-01

    Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

  15. Mechanical, structural and thermal properties of Ag-Cu and ZnO reinforced polylactide nanocomposite films.

    Science.gov (United States)

    Ahmed, Jasim; Arfat, Yasir Ali; Castro-Aguirre, Edgar; Auras, Rafael

    2016-05-01

    Plasticized polylactic acid (PLA) based nanocomposite films were prepared by incorporating polyethylene glycol (PEG) and two selected nanoparticles (NPs) [silver-copper (Ag-Cu) alloy (film matrix. Copyright © 2016 Elsevier B.V. All rights reserved.

  16. Study of decomposition kinetics of volatile β-diketonates of yttrium, barium and copper in flow reactor

    International Nuclear Information System (INIS)

    Devyatykh, G.G.; Gavrishchuk, E.M.; Gibin, A.M.; Dadanov, A.Yu.; Dzyubenko, N.G.; Kaul', A.R.; Nichiporuk, R.V.; Snezhko, N.T.; Ul'yanov, A.A.

    1990-01-01

    Heterogeneous oxidative decomposition of adduct of yttrium acetylacetonate with o-phenanthroline, copper acetylacetonate and barium dipivaloylmethanate in a flow-type reactor was carried out. The basic kinetic characteristics of chemical precipitation processes of films of yttrium, copper and barium oxides, which are components of high-temperature superconductors, were obtained. The values of activation energy of precipitation process of yttrium, copper and barium oxides constituted 76±10, 108±15, 81±12 (t 600 deg C) respectively

  17. Two-step flash light sintering of copper nanoparticle ink to remove substrate warping

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Chung-Hyeon; Joo, Sung-Jun [Department of Mechanical Convergence Engineering, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Kim, Hak-Sung, E-mail: kima@hanyang.ac.kr [Department of Mechanical Convergence Engineering, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2016-10-30

    Highlights: • We performed the two-step flash light sintering for copper nanoparticle ink to remove substrate warping. • 12 J/cm{sup 2} of preheating and 7 J/cm{sup 2} of main sintering energies were determined as optimum conditions to sinter the copper nanoparticle ink. • The resistivity of two-step sintered copper nanoparticle ink was 3.81 μΩ cm with 5B adhesion level, 2.3 times greater than that of bulk copper. • The two-step sintered case showed a high conductivity without any substrate warping. - Abstract: A two-step flash light sintering process was devised to reduce the warping of polymer substrates during the sintering of copper nanoparticle ink. To determine the optimum sintering conditions of the copper nanoparticle ink, the flash light irradiation conditions (pulse power, pulse number, on-time, and off-time) were varied and optimized. In order to monitor the flash light sintering process, in situ resistance and temperature monitoring of copper nanoink were conducted during the flash light sintering process. Also, a transient heat transfer analysis was performed by using the finite-element program ABAQUS to predict the temperature changes of copper nanoink and polymer substrate. The microstructures of the sintered copper nanoink films were analyzed by scanning electron microscopy. Additionally, an X-ray diffraction and Fourier transform infrared spectroscopy were used to characterize the crystal phase change of the sintered copper nanoparticles. The resulting two-step flash light sintered copper nanoink films exhibited a low resistivity (3.81 μΩ cm, 2.3 times of that of bulk copper) and 5B level of adhesion strength without warping of the polymer substrate.

  18. Corrosion of copper-based materials in gamma radiation

    International Nuclear Information System (INIS)

    Yunker, W.H.

    1986-06-01

    The corrosion behaviors of pure copper (CDA 101), 7% aluminum-copper bronze (CDA 613) and 30% nickel-copper (CDA 715) are being studied in a gamma radiation field of 1 x 10 5 R/h. These studies are in support of the Nevada Nuclear Waste Storage Investigations (NNWSI) Project, by Lawrence Livermore National Laboratory (LLNL), of copper-based materials for possible use in container systems for the permanent geologic burial of nuclear waste. Weight loss, tear drop (stressed), and crevice specimens of the three materials were exposed to water vapor-air atmospheres at 95 0 C and 150 0 C and to liquid water at 95 0 C for periods of one, three, and six months. Longer exposures are in progress. Measurements include: changes in the chemical composition of the gas and water, specimen weight changes, oxide film weights, evidence of microcracking and crevice corrosion, and chemical composition of the oxide films by Auger electron spectroscopy and x-ray diffraction. Interim results show considerable pit and under-film corrosion of alloys CDA 613 and CDA 715. Uniform corrosion rates range from 0.012 mil/yr (0.30 μm/yr) to 0.22 mil/yr (5.6 μm/yr), based on specimen weight losses during six- and seven-month exposures. The time dependencies will be determined as more data become available

  19. Copper : recession and recovery

    International Nuclear Information System (INIS)

    Warwick-Ching, T.

    2002-01-01

    In 2002, the world output for copper will fall for the first time in nearly a decade because of financial pressure and voluntary constraints. Cutbacks at copper mines amount to 760,000 tonnes per year. These cutbacks have occurred mostly in the United States which holds the largest share of high cost mines. This paper discussed recent developments in both copper supply and demand. The United States is unique as both a large consumer and producer of copper. At 1.35 million tonnes, US mine output in 2001 was at its lowest since 1987. The cutbacks in mining in general were described in this paper with particular reference to the huge loss of mining and metallurgical activity in the United States during a prolonged period of low prices in the mid 1980s. The author noted that this period was followed by an exceptional decade when much of the industry rebounded. Only 8 mines closed outright in the United States and a handful in Canada since the recession of the 1980s, but that is partly because mines got bigger and there are fewer small mines in North America. There are only 4 electrolytic refineries and 3 smelters still active in the entire United States, of which 2 are operating at a fraction of capacity. It was noted that only the buoyancy of China prevented a much bigger decline in copper demand on a global scale

  20. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  1. Copper oxide resistive switching memory for e-textile

    Directory of Open Access Journals (Sweden)

    Jin-Woo Han

    2011-09-01

    Full Text Available A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.

  2. Copper and copper-nickel alloys as zebra mussel antifoulants

    Energy Technology Data Exchange (ETDEWEB)

    Dormon, J.M.; Cottrell, C.M.; Allen, D.G.; Ackerman, J.D.; Spelt, J.K. [Univ. of Toronto, Ontario (Canada)

    1996-04-01

    Copper has been used in the marine environment for decades as cladding on ships and pipes to prevent biofouling by marine mussels (Mytilus edulis L.). This motivated the present investigation into the possibility of using copper to prevent biofouling in freshwater by both zebra mussels and quagga mussels (Dreissena polymorpha and D. bugensis collectively referred to as zebra mussels). Copper and copper alloy sheet proved to be highly effective in preventing biofouling by zebra mussels over a three-year period. Further studies were conducted with copper and copper-nickel mesh (lattice of expanded metal) and screen (woven wire with a smaller hole size), which reduced the amount of copper used. Copper screen was also found to be strongly biofouling-resistant with respect to zebra mussels, while copper mesh reduced zebra mussel biofouling in comparison to controls, but did not prevent it entirely. Preliminary investigations into the mechanism of copper antifouling, using galvanic couples, indicated that the release of copper ions from the surface of the exposed metal into the surrounding water is directly or indirectly responsible for the biofouling resistance of copper.

  3. Electrical conduction in composites containing copper core-copper

    Indian Academy of Sciences (India)

    Composites of nanometre-sized copper core-copper oxide shell with diameters in the range 6.1 to 7.3 nm dispersed in a silica gel were synthesised by a technique comprising reduction followed by oxidation of a suitably chosen precursor gel. The hot pressed gel powders mixed with nanometre-sized copper particles ...

  4. Electrical wire explosion process of copper/silver hybrid nano-particle ink and its sintering via flash white light to achieve high electrical conductivity.

    Science.gov (United States)

    Chung, Wan-Ho; Hwang, Yeon-Taek; Lee, Seung-Hyun; Kim, Hak-Sung

    2016-05-20

    In this work, combined silver/copper nanoparticles were fabricated by the electrical explosion of a metal wire. In this method, a high electrical current passes through the metal wire with a high voltage. Consequently, the metal wire evaporates and metal nanoparticles are formed. The diameters of the silver and copper nanoparticles were controlled by changing the voltage conditions. The fabricated silver and copper nano-inks were printed on a flexible polyimide (PI) substrate and sintered at room temperature via a flash light process, using a xenon lamp and varying the light energy. The microstructures of the sintered silver and copper films were observed using a scanning electron microscope (SEM) and a transmission electron microscope (TEM). To investigate the crystal phases of the flash-light-sintered silver and copper films, x-ray diffraction (XRD) was performed. The absorption wavelengths of the silver and copper nano-inks were measured using ultraviolet-visible spectroscopy (UV-vis). Furthermore, the resistivity of the sintered silver and copper films was measured using the four-point probe method and an alpha step. As a result, the fabricated Cu/Ag film shows a high electrical conductivity (4.06 μΩcm), which is comparable to the resistivity of bulk copper (1.68 μΩcm). In addition, the fabricated Cu/Ag nanoparticle film shows superior oxidation stability compared to the Cu nanoparticle film.

  5. Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

    KAUST Repository

    Wijeyasinghe, Nilushi; Regoutz, Anna; Eisner, Flurin; Du, Tian; Tsetseris, Leonidas; Lin, Yen-Hung; Faber, Hendrik; Pattanasattayavong, Pichaya; Li, Jinhua; Yan, Feng; McLachlan, Martyn A.; Payne, David J.; Heeney, Martin; Anthopoulos, Thomas D.

    2017-01-01

    spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl

  6. Study of copper fluorination

    International Nuclear Information System (INIS)

    Gillardeau, J.

    1967-02-01

    This report deals with the action of fluorine on copper. Comprehensive descriptions are given of the particular technological methods and of the preparation of the reactants. This fluorination reaction has been studied at medium and low fluorine pressures. A nucleation and growth phenomenon is described. The influence of a pollution of the gas phase on the fluorination process is described. The solid-state reaction between cupric fluoride and cooper has also been studied. A special study has been made of the growth of copper deposits by thermal decomposition of gaseous fluorides. (author) [fr

  7. Effects of combinative surface modification on the stability and conductivity of the copper particles

    International Nuclear Information System (INIS)

    Zeng, Yike; Li, Tongtong; Fu, Ming; Jiang, Shenglin; Zhang, Guangzu

    2014-01-01

    Highlights: • A combinative method is used to improve the performance of the copper powder. • The method integrates passivation, silver-coating, and coupling agent treatment. • The stability of the copper powder has been improved after the modification. • The sheet resistance of the conductive film is reduced to 15 mΩ. -- Abstract: The specific goal of the present study is to evaluate the surface performance of the copper particles and get excellent copper powder by surface modification. This paper proposes a combinative modification method integrating passivation, silver-coated, and coupling agent. As a result, after 600 h at room temperature the copper powder has the stabilization improved and is well combined with organic matters, and the sheet resistance of the film fabricated by the copper conductive filler is reduced to 15 mΩ. The performance of the copper powder has been greatly enhanced by the combinative modification, and the cost of the copper conductive filler is decreased significantly by this method. The results indicate that the combinative surface modification method can be used for practical electronic application

  8. Thermal interaction of molten copper with water

    International Nuclear Information System (INIS)

    Zyszkowski, W.

    1975-01-01

    Experimental work was performed to study the thermal interaction between molten copper particles (in the range of temperature from the copper melting point to about 1800 0 C) and water from about 15-80 0 C. The transient temperatures of the copper particles and water before and during their thermal interaction were measured. The history of the phenomena was filmed by means of a high speed FASTAX camera (to 8000 f/s). Classification of the observed phenomena and description of the heat-transfer modes were derived. One among the phenomena was the thermal explosion. The necessary conditions for the thermal explosion are discussed and their physical interpretation is given. According to the hypothesis proposed, the thermal explosion occurs when the molten metal has the temperature of its solidification and the heat transfer on its surface is sufficiently intensive. The 'sharp-change' of the crystalline structure during the solidification of the molten metal is the cause of the explosion fragmentation. (author)

  9. Brazing copper to dispersion-strengthened copper

    Science.gov (United States)

    Ryding, David G.; Allen, Douglas; Lee, Richard H.

    1996-11-01

    The advanced photon source is a state-of-the-art synchrotron light source that will produce intense x-ray beams, which will allow the study of smaller samples and faster reactions and processes at a greater level of detail than has ben possible to date. The beam is produced by using third- generation insertion devices in a 7-GeV electron/positron storage ring that is 1,104 meters in circumference. The heat load from these intense high-power devices is very high, and certain components must sustain total heat loads of 3 to 15 kW and heat fluxes of 30 W/mm$_2). Because the beams will cycle on and off many times, thermal shock and fatigue will be a problem. High heat flux impinging on a small area causes a large thermal gradient that results in high stress. GlidCop, a dispersion-strengthened copper, is the desired design material because of its high thermal conductivity and superior mechanical properties as compared to copper and its alloys. GlidCop is not amenable to joining by fusion welding, and brazing requires diligence because of high diffusivity. Brazing procedures were developed using optical and scanning electron microscopy.

  10. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  11. Copper and Copper Proteins in Parkinson’s Disease

    Directory of Open Access Journals (Sweden)

    Sergio Montes

    2014-01-01

    Full Text Available Copper is a transition metal that has been linked to pathological and beneficial effects in neurodegenerative diseases. In Parkinson’s disease, free copper is related to increased oxidative stress, alpha-synuclein oligomerization, and Lewy body formation. Decreased copper along with increased iron has been found in substantia nigra and caudate nucleus of Parkinson’s disease patients. Copper influences iron content in the brain through ferroxidase ceruloplasmin activity; therefore decreased protein-bound copper in brain may enhance iron accumulation and the associated oxidative stress. The function of other copper-binding proteins such as Cu/Zn-SOD and metallothioneins is also beneficial to prevent neurodegeneration. Copper may regulate neurotransmission since it is released after neuronal stimulus and the metal is able to modulate the function of NMDA and GABA A receptors. Some of the proteins involved in copper transport are the transporters CTR1, ATP7A, and ATP7B and the chaperone ATOX1. There is limited information about the role of those biomolecules in the pathophysiology of Parkinson’s disease; for instance, it is known that CTR1 is decreased in substantia nigra pars compacta in Parkinson’s disease and that a mutation in ATP7B could be associated with Parkinson’s disease. Regarding copper-related therapies, copper supplementation can represent a plausible alternative, while copper chelation may even aggravate the pathology.

  12. Creative Copper Crests

    Science.gov (United States)

    Knab, Thomas

    2011-01-01

    In this article, the author discusses how to create an art activity that would link the computer-created business cards of fourth-grade students with an upcoming school-wide medieval event. Creating family crests from copper foil would be a great connection, since they, like business cards, are an individual's way to identify themselves to others.…

  13. and copper(II)

    Indian Academy of Sciences (India)

    Unknown

    (II) and copper(II)–zinc(II) complexes. SUBODH KUMAR1, R N PATEL1*, P V KHADIKAR1 and. K B PANDEYA2. 1 Department of Chemistry, APS University, Rewa 486 003, India. 2 CSJM University, Kanpur 208 016, India e-mail: (R N Patel) ...

  14. Reagent conditions of the flotation of copper, copper - molybdenum and copper -zinc ores in foreing countries

    International Nuclear Information System (INIS)

    Nevaeva, L.M.

    1983-01-01

    Reagents-collectors and frothers, used abroad in reagent regimes of flotation of copper, copper-molybdenum and copper zinc ores, have been considered. Xanthogenates, aerofloats, xanthogenformiates, thionocarbamates are mainly used as reagents-collectors. Methylizobutylcarbinol and Daufros are used as reagents-frothers

  15. Hypoxia targeting copper complexes

    International Nuclear Information System (INIS)

    Dearling, J.L.

    1998-11-01

    The importance and incidence of tumour hypoxia, its measurement and current treatments available, including pharmacological and radiopharmacological methods of targeting hypoxia, are discussed. A variety of in vitro and in vivo methods for imposing hypoxia have been developed and are reviewed. Copper, its chemistry, biochemistry and radiochemistry, the potential for use of copper radionuclides and its use to date in this field is considered with particular reference to the thiosemicarbazones. Their biological activity, metal chelation, in vitro and in vivo studies of their radiocopper complexes and the potential for their use as hypoxia targeting radiopharmaceuticals is described. The reduction of the copper(II) complex to copper(l), its pivotal importance in their biological behaviour, and the potential for manipulation of this to effect hypoxia selectivity are described. An in vitro method for assessing the hypoxia selectivity of radiopharmaceuticals is reported. The rapid deoxygenation and high viability of a mammalian cell culture in this system is discussed and factors which may affect the cellular uptake of a radiopharmaceutical are described. The design, synthesis and complexation with copper and radiocopper of a range of bis(thiosemicarbazones) is reported. Synthesis of these compounds is simple giving high yields of pure products. The characteristics of the radiocopper complexes ( 64 Cu) including lipophilicity and redox activity are reported (reduction potentials in the range -0.314 - -0.590 V). High cellular uptakes of the radiocopper complexes of the ligands, in hypoxic and normoxic EMT6 and CHO320 cells, were observed. Extremes of selectivity are shown ranging from the hypoxia selective 64 Cu(II)ATSM to normoxic cell selective 64 Cu(II)GTS. The selectivities observed are compared with the physico chemical characteristics of the complexes. A good correlation exists between selectivity of the complex and its Cu(II)/Cu(I) reduction potential, with hypoxia

  16. Amplification of light emission of chiral pyridine Eu(III) complex by copper nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Reisfeld, Renata; Levchenko, Viktoria [Institute of Chemistry, The Hebrew University of Jerusalem, Givat Ram, Jerusalem 91904 (Israel); Piccinelli, Fabio; Bettinelli, Marco [Laboratorio Materiali Luminescenti, DB, Universita di Verona and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy)

    2016-02-15

    We outline the applications of lanthanides luminescence in a number of modern fields. The intensity of the luminescence of the expensive lanthanides can be increased by their interaction with nanoparticles of inexpensive copper. As a typical example the chiral pyridine-based Eu{sup 3+} complex was incorporated into amorphous films of polyvinyl alcohol with hydroxyethyl cellulose. The luminescence intensity of the complex is increased by three hundred percent by its interaction with copper nanoparticles. The synthesis and steady state spectroscopy of the materials are presented. - Highlights: • Nanoparticles of copper were for the first time synthesized at 80 °C. • Copper NPs were incorporated with a luminescent Eu{sup 3+} complex in a polymeric matrix. • The films produced were characterized by photoluminescence spectroscopy. • The luminescence of Eu{sup 3+} complex with Cu NPs is 3 times higher than the original one.

  17. Engineering Graphene Films from Coal

    Science.gov (United States)

    Vijapur, Santosh H.

    Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low

  18. Corrosion of copper and copper alloys in a basaltic repository environment

    International Nuclear Information System (INIS)

    Brehm, W.F.

    1990-01-01

    Corrosion testing done on copper and copper alloys in support of the basalt repository program is discussed. Tests were performed under anoxic conditions at 50C, 100C, 150C and 200C in the presence of a saturated basalt-bentonite packing. Tests were also performed in an air/steam mixture at temperatures between 150C and 200C. Some tests, particularly those in air/steam mixtures, were done in the presence of radiation fields of 10 2 , 10 3 or 10 4 rad/h. Exposure periods were up to 28 months. A synthetic groundwater, Grande Ronde ≠4, was used. The materials studied were ASTM B402μm·a for copper and 17 μm·a for cupronickel, but the average rates were muμm·a was obtained. The rates at longer times were less than a third of this value. Corrosion increased monotonically with time and temperature. Chalcocite (Cu 2 S) was the corrosion product at 200C. There was no detectable radiation effect, and no pitting was observed. In air/steam corrosion was uniform with no pitting. Linear corrosion was observed for pure copper. The maximum corrosion penetration after 25 months was 0.13 mm at 300C; cupronickel corroded more slowly, with a maximum penetration of 0.045mm after 25 months. Cuprite (Cu 2 O) and tenorite (CuO) were identified on cupronickel, but only Cu 2 O on copper. A pronounced radiation effect was seen at 250C, but not at 150C; the surface film morphology was different under irradiation. In the short term the presence of packing increased the corrosion rate. 5 refs

  19. Method of accurate thickness measurement of boron carbide coating on copper foil

    Science.gov (United States)

    Lacy, Jeffrey L.; Regmi, Murari

    2017-11-07

    A method is disclosed of measuring the thickness of a thin coating on a substrate comprising dissolving the coating and substrate in a reagent and using the post-dissolution concentration of the coating in the reagent to calculate an effective thickness of the coating. The preferred method includes measuring non-conducting films on flexible and rough substrates, but other kinds of thin films can be measure by matching a reliable film-substrate dissolution technique. One preferred method includes determining the thickness of Boron Carbide films deposited on copper foil. The preferred method uses a standard technique known as inductively coupled plasma optical emission spectroscopy (ICPOES) to measure boron concentration in a liquid sample prepared by dissolving boron carbide films and the Copper substrates, preferably using a chemical etch known as ceric ammonium nitrate (CAN). Measured boron concentration values can then be calculated.

  20. Patterned self-assembled monolayers of alkanethiols on copper nanomembranes by submerged laser ablation

    Science.gov (United States)

    Rhinow, Daniel; Hampp, Norbert A.

    2012-06-01

    Self-assembled monolayers (SAMs) of alkanethiols are major building blocks for nanotechnology. SAMs provide a functional interface between electrodes and biomolecules, which makes them attractive for biochip fabrication. Although gold has emerged as a standard, copper has several advantages, such as compatibility with semiconductors. However, as copper is easily oxidized in air, patterning SAMs on copper is a challenging task. In this work we demonstrate that submerged laser ablation (SLAB) is well-suited for this purpose, as thiols are exchanged in-situ, avoiding air exposition. Using different types of ω-substituted alkanethiols we show that alkanethiol SAMs on copper surfaces can be patterned using SLAB. The resulting patterns were analyzed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Both methods indicate that the intense laser beam promotes the exchange of thiols at the copper surface. Furthermore, we present a procedure for the production of free-standing copper nanomembranes, oxidation-protected by alkanethiol SAMs. Incubation of copper-coated mica in alkanethiol solutions leads to SAM formation on both surfaces of the copper film due to intercalation of the organic molecules. Corrosion-protected copper nanomembranes were floated onto water, transferred to electron microscopy grids, and subsequently analyzed by electron energy loss spectroscopy (EELS).

  1. Effect of sulfide on the corrosion behavior of pure copper under anaerobic condition and possibility of super long lifetime for copper overpacks

    International Nuclear Information System (INIS)

    Taniguchi, Naoki; Naitou, Morimasa; Kawasaki, Manabu

    2007-03-01

    In general, copper is thermodynamically stable under anaerobic condition, so that corrosion due to water reduction can not be occurred on copper. In the presence of sulfide, however, this property of immunity to corrosion is lost and corrosion as copper sulfide is occurred. Therefore, it is necessary to understand the effect of sulfide on the corrosion behavior of copper for using the copper as a material for overpacks. In this study, immersion tests and stress corrosion cracking tests were carried out using synthetic seawater containing sodium sulfide. Based on the experimental results, the possibility of super long lifetime for copper overpacks was discussed. The results were summarized as follows; 1) As the results of the immersion tests of copper in buffer material for 2 years, the corrosion rates became large with increase in the concentration of sodium sulfide. The corrosion rates of copper in sodium sulfide of 0.001M, 0.005M and 0.1M were estimated to be 0.55μm/y, 2.2μm/y, 15μm/y respectively. 2) Corrosion product film with black or dark-gray was formed on the surface of copper specimens, and it was identified as Cu 2 S(Chalcocite) by the X-ray diffraction. 3) As the results of stress corrosion cracking experiments by means of slow strain rate technique, copper has little susceptibility to crack initiation for the specimen of the experiment under 0.001M-Na 2 S condition. Obvious cracks were observed for the specimens of the experiment over 0.005M Na 2 S condition. 4) According to the results of immersion tests and stress corrosion cracking tests, copper overpacks have a potential to accomplish super long lifetime far over 1000 years owing to very low corrosion rate and no stress corrosion cracking if the sulfide concentration in repository environment is promised to be less than 0.001M. (author)

  2. ESD coating of copper with TiC and TiB2 based ceramic matrix composites

    Science.gov (United States)

    Talas, S.; Mertgenç, E.; Gökçe, B.

    2016-08-01

    In automotive industry, the spot welding is a general practice to join smaller sections of a car. This welding is specifically carried out in short time and in an elevated number with certain pressure applied on copper electrodes. In addition, copper electrodes are expected to endure against cyclic mechanical pressure and temperature that is released during the passage of the current. The deformation and oxidation behaviour of copper electrodes during service appear with increasing temperature of medium and they also need to be cleaned and cooled or replaced for the continuation of joining process. The coating of copper electrodes with ceramic matrix composites can provide alternative excellent high temperature strength and ensures both economic and efficient use of resources. This study shows that the ESD coating of copper electrodes with a continuous film of ceramic phase ensures an improved resistance to thermal effects during the service and the change in content of film may be critical for cyclic alloying.

  3. The effects of grooming on a copper ablative coating: a six year study.

    Science.gov (United States)

    Tribou, Melissa; Swain, Geoffrey

    2017-07-01

    More than 90% of US Navy Ships are coated with copper ablative paint. These ships may spend long periods of time pier-side, which makes them vulnerable to fouling. Hull grooming has been proposed as a means of maintaining the coatings in an operational condition. This study investigated the effect of grooming on a copper ablative coating exposed statically for six years. Grooming was performed weekly or monthly with controls left ungroomed. The fouling community was visually assessed, dry film thickness measurements were taken to monitor coating loss, and the copper leaching rates were measured. It was found that weekly and monthly groomed surfaces reduced fouling, and the ungroomed surfaces became fully fouled. Coating loss was similar for weekly, monthly and ungroomed surfaces. The results suggest that grooming is a viable method for maintaining copper ablative coatings in a fouling-free condition without adverse increases in the total copper output.

  4. Some features of the molecular assembly of copper porphyrazines

    International Nuclear Information System (INIS)

    Valkova, L.; Borovkov, N.; Kopranenkov, V.; Pisani, M.; Bossi, M.; Rustichelli, F.

    2002-01-01

    Floating layers and Langmuir-Blodgett (LB) films of copper porphyrazine (CuPaz) and its tetra-tert-butyl-substituted homologue (CuPaz') are studied. Contrary to phthalocyanines, the monolayer phase in the porphyrazine layers is metastable and transforms directly into the tetralayer one under moderate compression. In diffraction patterns and electronic spectra of the LB films, supramolecular peaks indicating collectivizing of the molecular electron density in direction perpendicular to the main axis of the macrocycle are found. The data obtained indicate the prismatic 3-D supermolecule to be the simplest structural unit of the porphyrazine assembly

  5. Formation, surface characterization, and electrocatalytic application of self-assembled monolayer films of tetra-substituted manganese, iron, and cobalt benzylthio phthalocyanine complexes

    CSIR Research Space (South Africa)

    Akinbulu, IA

    2011-10-01

    Full Text Available characteristics of the films were interrogated by cyclic voltammetry. Significant passivation of voltammetry processes associated with bare gold surface (gold oxidation and underpotential deposition of copper) confirmed formation of the films. Electrocatalytic...

  6. Direct growth of metal-organic frameworks thin film arrays on glassy carbon electrode based on rapid conversion step mediated by copper clusters and hydroxide nanotubes for fabrication of a high performance non-enzymatic glucose sensing platform.

    Science.gov (United States)

    Shahrokhian, Saeed; Khaki Sanati, Elnaz; Hosseini, Hadi

    2018-07-30

    The direct growth of self-supported metal-organic frameworks (MOFs) thin film can be considered as an effective strategy for fabrication of the advanced modified electrodes in sensors and biosensor applications. However, most of the fabricated MOFs-based sensors suffer from some drawbacks such as time consuming for synthesis of MOF and electrode making, need of a binder or an additive layer, need of expensive equipment and use of hazardous solvents. Here, a novel free-standing MOFs-based modified electrode was fabricated by the rapid direct growth of MOFs on the surface of the glassy carbon electrode (GCE). In this method, direct growth of MOFs was occurred by the formation of vertically aligned arrays of Cu clusters and Cu(OH) 2 nanotubes, which can act as both mediator and positioning fixing factor for the rapid formation of self-supported MOFs on GCE surface. The effect of both chemically and electrochemically formed Cu(OH) 2 nanotubes on the morphological and electrochemical performance of the prepared MOFs were investigated. Due to the unique properties of the prepared MOFs thin film electrode such as uniform and vertically aligned structure, excellent stability, high electroactive surface area, and good availability to analyte and electrolyte diffusion, it was directly used as the electrode material for non-enzymatic electrocatalytic oxidation of glucose. Moreover, the potential utility of this sensing platform for the analytical determination of glucose concentration was evaluated by the amperometry technique. The results proved that the self-supported MOFs thin film on GCE is a promising electrode material for fabricating and designing non-enzymatic glucose sensors. Copyright © 2018 Elsevier B.V. All rights reserved.

  7. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  8. Electrochemical Behavior of Pure Copper in Phosphate Buffer Solutions: A Comparison Between Micro- and Nano-Grained Copper

    Science.gov (United States)

    Imantalab, O.; Fattah-alhosseini, A.; Keshavarz, M. K.; Mazaheri, Y.

    2016-02-01

    In this work, electrochemical behavior of annealed (micro-) and nano-grained pure copper (fabricated by accumulative roll bonding process) in phosphate buffer solutions of various pH values ranging from 10.69 to 12.59 has been studied. Before any electrochemical measurements, evaluation of microstructure was obtained by optical microscope and transmission electron microscopy. To investigate the electrochemical behavior of the samples, the potentiodynamic polarization, Mott-Schottky analysis, and electrochemical impedance spectroscopy (EIS) were carried out. Potentiodynamic polarization plots and EIS measurements revealed that as a result of grain refinement, the passive behavior of the nano-grained sample was improved compared to that of annealed pure copper. Also, Mott-Schottky analysis indicated that the passive films behaved as p-type semiconductors and grain refinement did not change the semiconductor type of passive films.

  9. Silver Films with Hierarchical Chirality.

    Science.gov (United States)

    Ma, Liguo; Cao, Yuanyuan; Duan, Yingying; Han, Lu; Che, Shunai

    2017-07-17

    Physical fabrication of chiral metallic films usually results in singular or large-sized chirality, restricting the optical asymmetric responses to long electromagnetic wavelengths. The chiral molecule-induced formation of silver films prepared chemically on a copper substrate through a redox reaction is presented. Three levels of chirality were identified: primary twisted nanoflakes with atomic crystal lattices, secondary helical stacking of these nanoflakes to form nanoplates, and tertiary micrometer-sized circinates consisting of chiral arranged nanoplates. The chiral Ag films exhibited multiple plasmonic absorption- and scattering-based optical activities at UV/Vis wavelengths based on their hierarchical chirality. The Ag films showed chiral selectivity for amino acids in catalytic electrochemical reactions, which originated from their primary atomic crystal lattices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. The Effect of Copper

    African Journals Online (AJOL)

    environment, where fishes are found, stuns them ... of earthen ponds are springing up near cocoa ... farm, which posses toxicological risk to farmed ... Veg. oil. 1.0. 1.0. 1.0. 1.0. 1.0. Copper sulphate 0. 1.0. 2.5. 5.0. 7.5. Total ..... Cellulase Production by Wild Strains of Aspergillus Niger, ... Mangrove Area of Lagos, Nigeria.

  11. Copper Pyrimidine based MOFs

    Indian Academy of Sciences (India)

    Synthesized hydrothermally in a 23-mL Teflon lined stainless steel bomb by heating copper(II) 2-pyrazinecarboxylate (31 mg, 0.1 mmol) and tin(II) iodide (75 mg, 0.2 mmol) in 4 mL water at 150±C for 24 h. The reaction vessel was subsequently cooled to 70±C at 1±C/min and held at that temperature for 6 h before returning ...

  12. Supersonic copper clusters

    International Nuclear Information System (INIS)

    Powers, D.E.; Hansen, S.G.; Geusic, M.E.; Michalopoulos, D.L.; Smalley, R.E.

    1983-01-01

    Copper clusters ranging in size from 1 to 29 atoms have been prepared in a supersonic beam by laser vaporization of a rotating copper target rod within the throat of a pulsed supersonic nozzle using helium for the carrier gas. The clusters were cooled extensively in the supersonic expansion [T(translational) 1 to 4 K, T(rotational) = 4 K, T(vibrational) = 20 to 70 K]. These clusters were detected in the supersonic beam by laser photoionization with time-of-flight mass analysis. Using a number of fixed frequency outputs of an exciplex laser, the threshold behavior of the photoionization cross section was monitored as a function of cluster size.nce two-photon ionization (R2PI) with mass selective detection allowed the detection of five new electronic band systems in the region between 2690 and 3200 A, for each of the three naturally occurring isotopic forms of Cu 2 . In the process of scanning the R2PI spectrum of these new electronic states, the ionization potential of the copper dimer was determined to be 7.894 +- 0.015 eV

  13. XPS studies of short pulse laser interaction with copper

    International Nuclear Information System (INIS)

    Stefanov, P.; Minkovski, N.; Balchev, I.; Avramova, I.; Sabotinov, N.; Marinova, Ts.

    2006-01-01

    The effect of laser ablation on copper foil irradiated by a short 30 ns laser pulse was investigated by X-ray photoelectron spectroscopy. The laser fluence was varied from 8 to 16.5 J/cm 2 and the velocity of the laser beam from 10 to 100 mm/s. This range of laser fluence is characterized by a different intensity of laser ablation. The experiments were done in two kinds of ambient atmosphere: air and argon jet gas. The chemical state and composition of the irradiated copper surface were determined using the modified Auger parameter (α') and O/Cu intensity ratio. The ablation atmosphere was found to influence the size and chemical state of the copper particles deposited from the vapor plume. During irradiation in air atmosphere the copper nanoparticles react with oxygen and water vapor from the air and are deposited in the form of a CuO and Cu(OH) 2 thin film. In argon atmosphere the processed copper surface is oxidized after exposure to air

  14. Study of copper and purine-copper complexes on modified carbon electrodes by cyclic and elimination voltammetry

    Czech Academy of Sciences Publication Activity Database

    Trnková, L.; Zerzánková, L.; Dyčka, F.; Mikelová, R.; Jelen, František

    2008-01-01

    Roč. 8, č. 1 (2008), s. 429-444 ISSN 1424-8220 R&D Projects: GA AV ČR(CZ) IAA100040602; GA AV ČR(CZ) IAA400040804 Institutional research plan: CEZ:AV0Z50040507; CEZ:AV0Z50040702 Keywords : copper-purine complexes * paraffin-impregnated graphite electrode * mercury-film electrode Subject RIV: BO - Biophysics Impact factor: 1.870, year: 2008

  15. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  16. Native copper as a natural analogue for copper canisters

    International Nuclear Information System (INIS)

    Marcos, N.

    1989-12-01

    This paper discusses the occurrence of native copper as found in geological formations as a stability analogue of copper canisters that are planned to be used for the disposal of spent nuclear fuel in the Finnish bedrock. A summary of several publications on native copper occurrences is presented. The present geochemical and geohydrological conditions in which copper is met with in its metallic state show that metallic copper is stable in a wide range of temperatures. At low temperatures native copper is found to be stable where groundwater has moderate pH (about 7), low Eh (< +100 mV), and low total dissolved solids, especially chloride. Microscopical and microanalytical studies were carried out on a dozen of rock samples containing native copper. The results reveal that the metal shows no significant alteration. Only the surface of copper grains is locally coated. In the oldest samples there exist small corrosion cracks; the age of the oldest samples is over 1,000 million years. A review of several Finnish groundwater studies suggests that there are places in Finland where the geohydrological conditions are favourable for native copper stability. (orig.)

  17. Enhanced tribology durability of a self-assembled monolayer of alkylphosphonic acid on a textured copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wan Yong, E-mail: wanyong@qtech.edu.cn [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Wang Yinhu; Zhang Quan; Wang Zhongqian; Xu Zhen; Liu Changsong [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Zhang Junyan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer A textured surface is prepared on the copper substrate by chemical etching. Black-Right-Pointing-Pointer The alkylphosphonic acid is assembled on the etched copper substrate. Black-Right-Pointing-Pointer Combining texturing and alkylphosphonic acid coating render the films hydrophobicity. Black-Right-Pointing-Pointer The dual-layer films possess low friction with extremely long duration. - Abstract: A simple two-step process was developed to render the copper surface with lower friction and long durability. The copper substrate was immersed in a 0.01 M NaOH solution to fabricate a textured Cu{sub 2}O film. A self-assembled monolayer of alkylphosphonic acid was then deposited on the Cu{sub 2}O film to acquire high hydrophobicity. Scanning electron microscopy, Fourier transform infrared microscopy and water contact angle measurements were used to analyze the morphological features, the chemical composition and hydrophobicity of freshly prepared samples, respectively. Moreover, the friction-reducing behavior of the organic-inorganic composite film sliding against steel was evaluated in a ball-on-plate configuration. It was found that the alkylphosphonic acid films on the textured Cu{sub 2}O film led to decreased friction with significantly extended life. For a constant load, the increase in chain length of alkylphosphonic acid yields the films that are dramatically more stable against tribological deformation and provide low coefficients of friction over much longer periods of time.

  18. Enhanced tribology durability of a self-assembled monolayer of alkylphosphonic acid on a textured copper substrate

    International Nuclear Information System (INIS)

    Wan Yong; Wang Yinhu; Zhang Quan; Wang Zhongqian; Xu Zhen; Liu Changsong; Zhang Junyan

    2012-01-01

    Highlights: ► A textured surface is prepared on the copper substrate by chemical etching. ► The alkylphosphonic acid is assembled on the etched copper substrate. ► Combining texturing and alkylphosphonic acid coating render the films hydrophobicity. ► The dual-layer films possess low friction with extremely long duration. - Abstract: A simple two-step process was developed to render the copper surface with lower friction and long durability. The copper substrate was immersed in a 0.01 M NaOH solution to fabricate a textured Cu 2 O film. A self-assembled monolayer of alkylphosphonic acid was then deposited on the Cu 2 O film to acquire high hydrophobicity. Scanning electron microscopy, Fourier transform infrared microscopy and water contact angle measurements were used to analyze the morphological features, the chemical composition and hydrophobicity of freshly prepared samples, respectively. Moreover, the friction-reducing behavior of the organic-inorganic composite film sliding against steel was evaluated in a ball-on-plate configuration. It was found that the alkylphosphonic acid films on the textured Cu 2 O film led to decreased friction with significantly extended life. For a constant load, the increase in chain length of alkylphosphonic acid yields the films that are dramatically more stable against tribological deformation and provide low coefficients of friction over much longer periods of time.

  19. LIGNOCELLULOSE NANOCOMPOSITE CONTAINING COPPER SULFIDE

    OpenAIRE

    Sanchi Nenkova; Peter Velev; Mirela Dragnevska; Diyana Nikolova; Kiril Dimitrov

    2011-01-01

    Copper sulfide-containing lignocellulose nanocomposites with improved electroconductivity were obtained. Two methods for preparing the copper sulfide lignocellulose nanocomposites were developed. An optimization of the parameters for obtaining of the nanocomposites with respect to obtaining improved electroconductivity, economy, and lower quantities and concentration of copper and sulfur ions in waste waters was conducted. The mechanisms and schemes of delaying and subsequent connection of co...

  20. Copper tolerance in Becium homblei

    Energy Technology Data Exchange (ETDEWEB)

    Reilly, C; Stone, J

    1971-04-09

    Analyses show that Becium homblei has apparently no mechanism for limiting copper uptake. As growth proceeds, the concentration of metal increases in leaves and stems. Much of the copper is bound to structural material of the cells. There is a significant difference between the amount of extractable material in root and leaf tissues. These differences, in conjunction with the extrinsic factor of regular bush fires, were important factors in the evolution of this copper-resistant species of Becium. 9 references.

  1. Electrochemical characterization of anode passivation mechanisms in copper electrorefining

    Science.gov (United States)

    Moats, Michael Scott

    Anode passivation can decrease productivity and quality while increasing costs in modern copper electrorefineries. This investigation utilized electrochemical techniques to characterize the passivation behavior of anode samples from ten different operating companies. It is believed that this collection of anodes is the most diverse set ever to be assembled to study the effect of anode composition on passivation. Chronopotentiometry was the main electrochemical technique, employing a current density of 3820 A m-2. From statistical analysis of the passivation characteristics, increasing selenium, tellurium, silver, lead and nickel were shown to accelerate passivation. Arsenic was the only anode impurity that inhibited passivation. Oxygen was shown to accelerate passivation when increased from 500 to 1500 ppm, but further increases did not adversely affect passivation. Nine electrolyte variables were also examined. Increasing the copper, sulfuric acid or sulfate concentration of the electrolyte accelerated passivation. Arsenic in the electrolyte had no effect on passivation. Chloride and optimal concentrations of thiourea and glue delayed passivation. Linear sweep voltammetry, cyclic voltammetry, and impedance spectroscopy provided complementary information. Analysis of the electrochemical results led to the development of a unified passivation mechanism. Anode passivation results from the formation of inhibiting films. Careful examination of the potential details, especially those found in the oscillations just prior to passivation, demonstrated the importance of slimes, copper sulfate and copper oxide. Slimes confine dissolution to their pores and inhibit diffusion. This can lead to copper sulfate precipitation, which blocks more of the surface area. Copper oxide forms because of the resulting increase in potential at the interface between the copper sulfate and anode. Ultimate passivation occurs when the anode potential is high enough to stabilize the oxide film in

  2. Copper toxicity in housed lambs

    Energy Technology Data Exchange (ETDEWEB)

    Adamson, A H; Valks, D A; Appleton, M A; Shaw, W B

    1969-09-27

    Copper toxicity among 170 lambs artificially reared indoors at High Mowthorpe NAAS Experimental Husbandry Farm is reported. Although only three lambs were lost it is not unreasonable to suggest that the liver copper levels of the lambs which were slaughtered would have been high and losses could have been much heavier had there been any further copper supplementation. Even a copper level of 20 ppm in lamb concentrates given to lambs reared artificially indoors is dangerous, and intakes of much less than 38 mg per lamb per day can be fatal if given of a prolonged period. 5 references, 1 table.

  3. Copper and copper-nickel-alloys - An overview

    Energy Technology Data Exchange (ETDEWEB)

    Klassert, Anton; Tikana, Ladji [Deutsches Kupferinstitut e.V. Am Bonneshof 5, 40474 Duesseldorf (Germany)

    2004-07-01

    With the increasing level of industrialization the demand for and the number of copper alloys rose in an uninterrupted way. Today, the copper alloys take an important position amongst metallic materials due to the large variety of their technological properties and applications. Nowadays there exist over 3.000 standardized alloys. Copper takes the third place of all metals with a worldwide consumption of over 15 millions tons per year, following only to steel and aluminum. In a modern industrial society we meet copper in all ranges of the life (electro-technology, building and construction industry, mechanical engineering, automotive, chemistry, offshore, marine engineering, medical applications and others.). Copper is the first metal customized by humanity. Its name is attributed to the island Cyprus, which supplied in the antiquity copper to Greece, Rome and the other Mediterranean countries. The Romans called it 'ore from Cyprus' (aes cyprium), later cuprum. Copper deposited occasionally also dapper and could be processed in the recent stone age simply by hammering. Already in early historical time copper alloys with 20 to 50 percent tin was used for the production of mirrors because of their high reflecting power. Although the elementary nickel is an element discovered only recently from a historical perspective, its application in alloys - without any knowledge of the alloy composition - occurred at least throughout the last 2.000 years. The oldest copper-nickel coin originates from the time around 235 B.C.. Only around 1800 AD nickel was isolated as a metallic element. In particular in the sea and offshore technology copper nickel alloys found a broad field of applications in piping systems and for valves and armatures. The excellent combination of characteristics like corrosion resistance, erosion stability and bio-fouling resistance with excellent mechanical strength are at the basis of this success. An experience of many decades supports the use

  4. The effects of impurities on the properties of OFP copper specified for the copper iron canister

    International Nuclear Information System (INIS)

    Bowyer, W.H.

    1999-09-01

    A brief literature study has addressed the effects of impurities on OF copper to which 50 ppm of phosphorus has been added. This copper is the candidate material for the corrosion resistant coating to be applied to the container under development by SKB for the disposal of high level nuclear waste. The levels of impurities expected in this grade of copper and the final use have controlled the focus of the work. It is concluded that the impurities of greatest importance in the context of the proposed application are sulphur, phosphorus, bismuth and lead. The addition of 50 ppm of phosphorus should ensure very low oxygen content in the copper such that, As, Ni, Mn, Cr, Fe, Sn, Zn, Si, Al, Sb and Cd present as impurities all remain in solution in the copper at all temperatures of interest. In this state they will exert no material effect on the fitness for purpose of the material. Sulphur is expected to be present in amounts exceeding the solubility limit such that it will occur as grain boundary films or particles. Such segregation can cause embrittlement and it will be more serious as grain size increases. There is no evidence to support the assertion that the phosphorus addition modifies the segregation behaviour of sulphur. There is evidence that sulphur will combine with V, Zr, or Ti, even when they are present at extremely low levels, but there is no indication of the likely effects of these combinations on the segregation behaviour or embrittling effects. There is clear evidence that when creep failure occurs by intergranular cracking, sulphur causes the creep strain to fracture to be reduced to less than 1%. The amount of sulphur required for this is very low (i.e. less than the amount permitted in the specification) and dependant on grain size. The transition from transgranular to intergranular failure in creep is influenced by temperature, stress, grain size, and composition. The addition of phosphorus increases the temperature at which the transition occurs

  5. The effects of impurities on the properties of OFP copper specified for the copper iron canister

    Energy Technology Data Exchange (ETDEWEB)

    Bowyer, W.H. [Meadow End Farm, Farnham (United Kingdom)

    1999-09-01

    A brief literature study has addressed the effects of impurities on OF copper to which 50 ppm of phosphorus has been added. This copper is the candidate material for the corrosion resistant coating to be applied to the container under development by SKB for the disposal of high level nuclear waste. The levels of impurities expected in this grade of copper and the final use have controlled the focus of the work. It is concluded that the impurities of greatest importance in the context of the proposed application are sulphur, phosphorus, bismuth and lead. The addition of 50 ppm of phosphorus should ensure very low oxygen content in the copper such that, As, Ni, Mn, Cr, Fe, Sn, Zn, Si, Al, Sb and Cd present as impurities all remain in solution in the copper at all temperatures of interest. In this state they will exert no material effect on the fitness for purpose of the material. Sulphur is expected to be present in amounts exceeding the solubility limit such that it will occur as grain boundary films or particles. Such segregation can cause embrittlement and it will be more serious as grain size increases. There is no evidence to support the assertion that the phosphorus addition modifies the segregation behaviour of sulphur. There is evidence that sulphur will combine with V, Zr, or Ti, even when they are present at extremely low levels, but there is no indication of the likely effects of these combinations on the segregation behaviour or embrittling effects. There is clear evidence that when creep failure occurs by intergranular cracking, sulphur causes the creep strain to fracture to be reduced to less than 1%. The amount of sulphur required for this is very low (i.e. less than the amount permitted in the specification) and dependant on grain size. The transition from transgranular to intergranular failure in creep is influenced by temperature, stress, grain size, and composition. The addition of phosphorus increases the temperature at which the transition occurs

  6. Spectrographic determination of impurities in copper and copper oxide

    International Nuclear Information System (INIS)

    Sabato, S.F.; Lordello, A.R.

    1990-11-01

    An emission spectrographic method for the determination of Al, Bi, Ca, Cd, Cr, Fe, Ge, Mg, Mn, Mo, Ni, Pb, Sb, Si, Sn and Zn in copper and copper oxide is described. Two mixtures (Graphite and ZnO: graphite and GeO sub(2)) were used as buffers. The standard deviation lies around 10%. (author)

  7. Nickel, copper and cobalt coalescence in copper cliff converter slag

    Directory of Open Access Journals (Sweden)

    Wolf A.

    2016-01-01

    Full Text Available The aim of this investigation is to assess the effect of various additives on coalescence of nickel, copper and cobalt from slags generated during nickel extraction. The analyzed fluxes were silica and lime while examined reductants were pig iron, ferrosilicon and copper-silicon compound. Slag was settled at the different holding temperatures for various times in conditions that simulated the industrial environment. The newly formed matte and slag were characterized by their chemical composition and morphology. Silica flux generated higher partition coefficients for nickel and copper than the addition of lime. Additives used as reducing agents had higher valuable metal recovery rates and corresponding partition coefficients than fluxes. Microstructural studies showed that slag formed after adding reductants consisted of primarily fayalite, with some minute traces of magnetite as the secondary phase. Addition of 5 wt% of pig iron, ferrosilicon and copper-silicon alloys favored the formation of a metallized matte which increased Cu, Ni and Co recoveries. Addition of copper-silicon alloys with low silicon content was efficient in copper recovery but coalescence of the other metals was low. Slag treated with the ferrosilicon facilitated the highest cobalt recovery while copper-silicon alloys with silicon content above 10 wt% resulted in high coalescence of nickel and copper, 87 % and 72 % respectively.

  8. Adsorption behavior of caffeine as a green corrosion inhibitor for copper

    International Nuclear Information System (INIS)

    Souza, Fernando Sílvio de; Giacomelli, Cristiano; Gonçalves, Reinaldo Simões; Spinelli, Almir

    2012-01-01

    Electrochemical and impedance experiments were carried out to evaluate the corrosion behavior of copper in aerated 0.1 mol L −1 H 2 SO 4 solutions in the presence of three xanthine derivatives with similar chemical structures. The corrosion rate of copper was found to increase in the presence of theophylline and theobromine and decrease in the presence of caffeine. The adsorption and inhibitory effect of caffeine on copper surfaces in aerated 0.1 mol L −1 H 2 SO 4 solutions were then investigated in detail by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), contact angle measurements, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and fluorescence experiments. The data obtained indicate that caffeine behaves as a cathodic-type inhibitor adsorbing onto the copper surface according to the Temkin isotherm, with the negative ∆G° ads value of − 31.1 kJ mol −1 signifying a spontaneous adsorption process. The corrosion inhibition efficiency increased with caffeine concentration in the range of 1.0–10.0 mmol L −1 . Furthermore, the EIS results obtained at the open-circuit potential and surface analysis (SEM, EDS and fluorescence) clearly demonstrated the adsorption of the organic compound onto the copper electrode. The contact angle measurements revealed the formation of a hydrophobic protective film. This film covers up to 72% of the total active surface, acts as a protective barrier and prevents interaction between the metal, water and oxygen molecules. - Highlights: ► We have investigated the adsorption and corrosion inhibition of caffeine on copper surfaces. ► Caffeine behaves as a cathodic-type inhibitor. ► Caffeine adsorbs onto copper surface according to Temkin isotherm. ► There exists the formation of a hydrophobic film that acts as a protective barrier. ► This corrosion inhibitor covers up to 72% of the total active surface of copper.

  9. Measurement of labile copper in wine by medium exchange stripping potentiometry utilising screen printed carbon electrodes.

    Science.gov (United States)

    Clark, Andrew C; Kontoudakis, Nikolaos; Barril, Celia; Schmidtke, Leigh M; Scollary, Geoffrey R

    2016-07-01

    The presence of copper in wine is known to impact the reductive, oxidative and colloidal stability of wine, and techniques enabling measurement of different forms of copper in wine are of particular interest in understanding these spoilage processes. Electrochemical stripping techniques developed to date require significant pretreatment of wine, potentially disturbing the copper binding equilibria. A thin mercury film on a screen printed carbon electrode was utilised in a flow system for the direct analysis of labile copper in red and white wine by constant current stripping potentiometry with medium exchange. Under the optimised conditions, including an enrichment time of 500s and constant current of 1.0μA, the response range was linear from 0.015 to 0.200mg/L. The analysis of 52 red and white wines showed that this technique generally provided lower labile copper concentrations than reported for batch measurement by related techniques. Studies in a model system and in finished wines showed that the copper sulfide was not measured as labile copper, and that loss of hydrogen sulfide via volatilisation induced an increase in labile copper within the model wine system. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Adhesion of rhodium films on metallic substrates

    International Nuclear Information System (INIS)

    Marot, L.; Covarel, G.; Tuilier, M.-H.; Steiner, R.; Oelhafen, P.

    2008-01-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength

  11. Adhesion of rhodium films on metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marot, L. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)], E-mail: laurent.marot@unibas.ch; Covarel, G.; Tuilier, M.-H. [Laboratoire Mecanique, Materiaux et Procedes de Fabrication, Pole STIC-SPI-Math 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 - Mulhouse Cedex (France); Steiner, R.; Oelhafen, P. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2008-09-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength.

  12. POLYPYRROLE COATED CELLULOSIC SUBSTRATE MODIFIED BY COPPER OXIDE AS ELECTRODE FOR NITRATE ELECTROREDUCTION

    OpenAIRE

    A. HAMAM; D. OUKIL; A. DIB; H. HAMMACHE; L. MAKHLOUFI; B. SAIDANI

    2015-01-01

    The aim of this work is to synthesize polypyrrole (PPy) films on nonconducting cellulosic substrate and modified by copper oxide particles for use in the nitrate electroreduction process. Firstly, the chemical polymerization of polypyrrole onto cellulosic substrate is conducted by using FeCl3 as an oxidant and pyrrole as monomer. The thickness and topography of the different PPy films obtained were estimated using a profilometer apparatus. The electrochemical reactivity of the obtained electr...

  13. Copper: From neurotransmission to neuroproteostasis

    Directory of Open Access Journals (Sweden)

    Carlos M Opazo

    2014-07-01

    Full Text Available Copper is critical for the Central Nervous System (CNS development and function. In particular, different studies have shown the effect of copper at brain synapses, where it inhibits Long Term Potentation (LTP and receptor pharmacology. Paradoxically, according to recent studies copper is required for a normal LTP response. Copper is released at the synaptic cleft, where it blocks glutamate receptors, which explain its blocking effects on excitatory neurotransmission. Our results indicate that copper also enhances neurotransmission through the accumulation of PSD95 protein, which increase the levels of AMPA receptors located at the plasma membrane of the post-synaptic density. Thus, our findings represent a novel mechanism for the action of copper, which may have implications for the neurophysiology and neuropathology of the CNS. These data indicate that synaptic configuration is sensitive to transient changes in transition metal homeostasis. Our results suggest that copper increases GluA1 subunit levels of the AMPA receptor through the anchorage of AMPA receptors to the plasma membrane as a result of PSD-95 accumulation. Here, we will review the role of copper on neurotransmission of CNS neurons. In addition, we will discuss the potential mechanisms by which copper could modulate neuronal proteostasis (neuroproteostasis in the CNS with focus in the Ubiquitin Proteasome System, which is particularly relevant to neurological disorders such Alzheimer’s disease (AD where copper and protein dyshomeostasis may contribute to neurodegeneration. An understanding of these mechanisms may ultimately lead to the development of novel therapeutic approaches to control metal and synaptic alterations observed in AD patients.

  14. Advanced Copper Composites Against Copper-Tolerant Xanthomonas perforans and Tomato Bacterial Spot.

    Science.gov (United States)

    Strayer-Scherer, A; Liao, Y Y; Young, M; Ritchie, L; Vallad, G E; Santra, S; Freeman, J H; Clark, D; Jones, J B; Paret, M L

    2018-02-01

    Bacterial spot, caused by Xanthomonas spp., is a widespread and damaging bacterial disease of tomato (Solanum lycopersicum). For disease management, growers rely on copper bactericides, which are often ineffective due to the presence of copper-tolerant Xanthomonas strains. This study evaluated the antibacterial activity of the new copper composites core-shell copper (CS-Cu), multivalent copper (MV-Cu), and fixed quaternary ammonium copper (FQ-Cu) as potential alternatives to commercially available micron-sized copper bactericides for controlling copper-tolerant Xanthomonas perforans. In vitro, metallic copper from CS-Cu and FQ-Cu at 100 μg/ml killed the copper-tolerant X. perforans strain within 1 h of exposure. In contrast, none of the micron-sized copper rates (100 to 1,000 μg/ml) from Kocide 3000 significantly reduced copper-tolerant X. perforans populations after 48 h of exposure compared with the water control (P copper-based treatments killed the copper-sensitive X. perforans strain within 1 h. Greenhouse studies demonstrated that all copper composites significantly reduced bacterial spot disease severity when compared with copper-mancozeb and water controls (P copper composites significantly reduced disease severity when compared with water controls, using 80% less metallic copper in comparison with copper-mancozeb in field studies (P copper composites have the potential to manage copper-tolerant X. perforans and tomato bacterial spot.

  15. Deposition of Antimicrobial Copper-Rich Coatings on Polymers by Atmospheric Pressure Jet Plasmas

    Directory of Open Access Journals (Sweden)

    Jana Kredl

    2016-04-01

    Full Text Available Inanimate surfaces serve as a permanent reservoir for infectious microorganisms, which is a growing problem in areas in everyday life. Coating of surfaces with inorganic antimicrobials, such as copper, can contribute to reduce the adherence and growth of microorganisms. The use of a DC operated air plasma jet for the deposition of copper thin films on acrylonitrile butadiene styrene (ABS substrates is reported. ABS is a widespread material used in consumer applications, including hospitals. The influence of gas flow rate and input current on thin film characteristics and its bactericidal effect have been studied. Results from X-ray photoelectron spectroscopy (XPS and atomic force microscopy confirmed the presence of thin copper layers on plasma-exposed ABS and the formation of copper particles with a size in the range from 20 to 100 nm, respectively. The bactericidal properties of the copper-coated surfaces were tested against Staphylococcus aureus. A reduction in growth by 93% compared with the attachment of bacteria on untreated samples was observed for coverage of the surface with 7 at. % copper.

  16. Field dependent surface resistance of niobium on copper cavities

    Directory of Open Access Journals (Sweden)

    T. Junginger

    2015-07-01

    Full Text Available The surface resistance R_{S} of superconducting cavities prepared by sputter coating a niobium film on a copper substrate increases significantly stronger with the applied rf field compared to cavities of bulk material. A possible cause is that the thermal boundary resistance between the copper substrate and the niobium film induces heating of the inner cavity wall, resulting in a higher R_{S}. Introducing helium gas in the cavity, and measuring its pressure as a function of applied field allowed to conclude that the inner surface of the cavity is heated up by less than 120 mK when R_{S} increases with E_{acc} by 100  nΩ. This is more than one order of magnitude less than what one would expect from global heating. Additionally, the effects of cooldown speed and low temperature baking have been investigated in the framework of these experiments. It is shown that for the current state of the art niobium on copper cavities there is only a detrimental effect of low temperature baking. A fast cooldown results in a lowered R_{S}.

  17. XPS investigation of copper corrosion in hydro-carbonate electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Sieber, I.; Hildebrand, H.; Schmuki, P. [University Erlangen-Nuremberg, Martensstr.7, D-91058 Erlangen (Germany); Kaluzhina, S.A. [Voronezh State University, University Sq.1, 394006 Voronezh (Russian Federation)

    2004-07-01

    Problems of corrosion and effective methods of metal protection are still actual in the present days. Special interest is in copper material, which as basic component of heat exchanger constructions can corrode in contact with carbonate water. The intensity of the corrosion destruction depends on the carbon water concentration and thermal conditions in the system. The present paper provides new insights into the role of the HCO{sub 3}{sup -} - ions in the corrosion process of copper. Copper samples after anodic oxidation in 0.02 and 0.1 M NaHCO{sub 3} have been studied using XPS and SEM. The presence of carbonate compounds in the passive film in 0.1 M NaHCO{sub 3} was established by XPS analysis all over the surface. These compounds are responsible for the protective character of the passive film towards local destruction. In the 0.02 M NaHCO{sub 3} electrolyte carbonate compounds were not found at places of pit formation after multi-cycling of the sample. (authors)

  18. Copper Powder and Chemicals: edited proceedings of a seminar

    Energy Technology Data Exchange (ETDEWEB)

    1980-12-01

    Various papers are presented covering the following topics: Status of Copper Chemical Industry in India, Copper Powder from Industrial Wastes, Manufacture of Copper Hydroxide and High Grade Cement Copper from Low Grade Copper Ore, Manufacture of Copper Sulphate as a By-Product, Hydrometallurgical Treatments of Copper Converter and Smelter Slage for Recovering Copper and other Non-Ferrous Metals, Recovery of Copper from Dilute Solutions, Use of Copper Compounds as Fungicides in India, Copper in Animal Husbandry, and Use of Copper Powder and Chemicals for Marine Applications. The keynote paper given at the Seminar was on Conservation of Copper for Better Use.

  19. Step driven competitive epitaxial and self-limited growth of graphene on copper surface

    Directory of Open Access Journals (Sweden)

    Lili Fan

    2011-09-01

    Full Text Available The existence of surface steps was found to have significant function and influence on the growth of graphene on copper via chemical vapor deposition. The two typical growth modes involved were found to be influenced by the step morphologies on copper surface, which led to our proposed step driven competitive growth mechanism. We also discovered a protective role of graphene in preserving steps on copper surface. Our results showed that wide and high steps promoted epitaxial growth and yielded multilayer graphene domains with regular shape, while dense and low steps favored self-limited growth and led to large-area monolayer graphene films. We have demonstrated that controllable growth of graphene domains of specific shape and large-area continuous graphene films are feasible.

  20. Electronic properties and orbital-filling mechanism in Rb-intercalated copper phthalocyanine

    NARCIS (Netherlands)

    Evangelista, F.; Gotter, R.; Mahne, N.; Nannarone, S.; Ruocco, A.; Rudolf, P.

    2008-01-01

    The evolution of the electronic properties of a thin film of copper phthalocyanine deposited on Al(100) and progressively intercalated with rubidium atoms was followed by photoemission and X-ray absorption spectroscopies. Electron donation from the Rb atoms to the C32H16N8Cu molecules results in the

  1. Synthesis of TOPO-capped Nanocrystals of Copper Sulphide from a ...

    African Journals Online (AJOL)

    Nearly mono-dispersed TOPO-capped copper sulphide nanocrystals of ca. 4.5 nm (diameter) have been ... aqueous sols,1 monolayers,2 bilayer lipid membranes,3,4 LB films,5 ... addition of an excess of methanol to the yellow solution a thin.

  2. New configuration for efficient and durable copper coating on the outer surface of a tube

    Directory of Open Access Journals (Sweden)

    Irfan Ahmad

    2017-03-01

    Full Text Available A well-adhered copper coating on stainless steel power coupler parts is required in superconducting radio frequency (SRF accelerators. Radio frequency power coupler parts are complex, tubelike stainless steel structures, which require copper coating on their outer and inner surfaces. Conventional copper electroplating sometimes produces films with inadequate adhesion strength for SRF applications. Electroplating also requires a thin nickel strike layer under the copper coating, whose magnetic properties can be detrimental to SRF applications. Coaxial energetic deposition (CED and sputtering methods have demonstrated efficient conformal coating on the inner surfaces of tubes but coating the outer surface of a tube is challenging because these coating methods are line of sight. When the substrate is off axis and the plasma source is on axis, only a small section of the substrate’s outer surface is exposed to the source cathode. The conventional approach is to rotate the tube to achieve uniformity across the outer surface. This method results in poor film thickness uniformity and wastes most of the source plasma. Alameda Applied Sciences Corporation (AASC has developed a novel configuration called hollow external cathode CED (HEC-CED to overcome these issues. HEC-CED produces a film with uniform thickness and efficiently uses all eroded source material. The Cu film deposited on the outside of a stainless steel tube using the new HEC-CED configuration survived a high pressure water rinse adhesion test. HEC-CED can be used to coat the outside of any cylindrical structure.

  3. Adhesion and adhesion changes at the copper metal-(acrylonitrile-butadiene-styrene) polymer interface

    NARCIS (Netherlands)

    Kisin, S.; Varst, van der P.G.T.; With, de G.

    2007-01-01

    It is known that the adhesive strength of metallic films on polymer substrates often changes in the course of time. To study this effect in more detail, the adhesion energy of sputtered and galvanically strengthened copper coatings on acrylonitrile–butadiene–styrene polymer substrate was determined

  4. Galvanic corrosion of copper-cast iron couples

    International Nuclear Information System (INIS)

    Smart, N.R.; Rance, A.P.; Fennell, P.A.H.

    2005-01-01

    To ensure the safe encapsulation of spent nuclear fuel rods for geological disposal, SKB are considering using the Copper-Cast Iron Canister, which consists of an outer copper canister and an inner cast iron container. The canister will be placed into boreholes in the bedrock of a geologic repository and surrounded by bentonite clay. In the unlikely event of the outer copper canister being breached, water would enter the annulus between the inner and outer canister and at points of contact between the two metals there would be the possibility of galvanic interactions. Although this subject has been considered previously from both a theoretical standpoint and by experimental investigations there was a need for further experimental studies in support of information provided by SKB to the Swedish regulators (SKI). In the work reported here copper-cast iron galvanic couples were set up in a number of different environments representing possible conditions in the SKB repository. The tests investigated two artificial porewaters at 30 deg C and 50 deg C, under aerated and deaerated conditions. Tests were also carried out in a 30 wt% bentonite slurry made up in artificial groundwater. The potential of the couples and the currents passing between the coupled electrodes were monitored for several months. The effect of growing an oxide film on the surface of the cast iron prior to coupling it with copper was investigated. In addition, some crevice specimens based on the multi-crevice assembly (MCA) design were used to simulate the situation where the copper canister will be in direct contact with the cast iron inner vessel. The electrochemical results are presented graphically in the form of electrode potentials and galvanic corrosion currents as a function of time. The galvanic currents in aerated conditions were much higher than in deaerated conditions. For example, at 30 deg C, galvanic corrosion rates as low as 0.02 μm/year for iron were observed after deaeration, but

  5. 21 CFR 73.1647 - Copper powder.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Copper powder. 73.1647 Section 73.1647 Food and... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1647 Copper powder. (a) Identity. (1) The color additive copper powder is a very fine free-flowing metallic powder prepared from virgin electrolytic copper. It...

  6. Copper uptake and retention in liver parenchymal cells isolated from nutritionally copper-deficient rats

    NARCIS (Netherlands)

    Berg, van den G.J.; de Goeij, J.J.M.; Bock, I.; Gijbels, M.J.J.; Brouwer, A.; Lei, K.Y.; Hendriks, H.F.J.

    1991-01-01

    Copper uptake and retention were studied in primary cultures of liver parenchymal cells isolated from copper-deficient rats. Male Sprague-Dawley rats were fed a copper-deficient diet (<1 mg Cu/kg) for 10 wk. Copper-deficient rats were characterized by low copper concentrations in plasma and liver,

  7. Copper uptake and retention in liver parenchymal cells isolated from nutritionally copper-deficient rats

    NARCIS (Netherlands)

    Berg, G.J. van den; Goeij, J.J.M. de; Bock, I.; Gijbels, M.J.J.; Brouwer, A.; Lei, K.Y.; Hendruiks, H.F.J.

    1991-01-01

    Copper uptake and retention were studied in primary cultures of liver parenchymal cells isolated from copper-deficient rats. Male Sprague-Dawley rats were fed a copper-deficient diet (< 1 mg Cu/kg) for 10 wk. Copper-deficient rats were characterized by low copper concentrations in plasma and liver,

  8. NID Copper Sample Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Zhu, Zihua

    2011-09-12

    The current focal point of the nuclear physics program at PNNL is the MAJORANA DEMONSTRATOR, and the follow-on Tonne-Scale experiment, a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0νββ). This experiment requires the use of germanium isotopically enriched in 76Ge. The MAJORANA DEMONSTRATOR is a DOE and NSF funded project with a major science impact. The DEMONSTRATOR will utilize 76Ge from Russia, but for the Tonne-Scale experiment it is hoped that an alternate technology, possibly one under development at Nonlinear Ion Dynamics (NID), will be a viable, US-based, lower-cost source of separated material. Samples of separated material from NID require analysis to determine the isotopic distribution and impurities. DOE is funding NID through an SBIR grant for development of their separation technology for application to the Tonne-Scale experiment. The Environmental Molecular Sciences facility (EMSL), a DOE user facility at PNNL, has the required mass spectroscopy instruments for making isotopic measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR and for the development of the future separation technology required for the Tonne-Scale experiment. A sample of isotopically separated copper was provided by NID to PNNL in January 2011 for isotopic analysis as a test of the NID technology. The results of that analysis are reported here. A second sample of isotopically separated copper was provided by NID to PNNL in August 2011 for isotopic analysis as a test of the NID technology. The results of that analysis are also reported here.

  9. Pulsed laser deposition of Cu-Sn-S for thin film solar cells

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

    Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

  10. Gallium and copper radiopharmaceutical chemistry

    International Nuclear Information System (INIS)

    Green, M.A.

    1991-01-01

    Gallium and copper radionuclides have a long history of use in nuclear medicine. Table 1 presents the nuclear properties of several gallium and copper isotopes that either are used in the routine practice of clinical nuclear medicine or exhibit particular characteristics that might make them useful in diagnostic or therapeutic medicine. This paper will provide some historic perspective along with an overview of some current research directions in gallium and copper radiopharmaceutical chemistry. A more extensive review of gallium radiopharmaceutical chemistry has recently appeared and can be consulted for a more in-depth treatment of this topic

  11. Copper complexes as 'radiation recovery' agents

    International Nuclear Information System (INIS)

    Sorenson, J.R.J.

    1989-01-01

    Copper and its compounds have been used for their remedial effects since the beginning of recorded history. As early as 3000 BC the Egyptians used copper as an antiseptic for healing wounds and to sterilise drinking water; and later, ca 1550 BC, the Ebers Papyrus reports the use of copper acetate, copper sulphate and pulverised metallic copper for the treatment of eye infections. These historical uses of copper and its compounds are particularly interesting in the light of modern evidence concerning the use of certain copper complexes for the treatment of radiation sickness and more recently as an adjunct to radiotherapy for cancer patients. (author)

  12. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-01-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C 60 ), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C 60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10 3 Ω m and 3 x 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10 8 Ω m in dark to 3.1 x 10 6 Ω m under the light.

  13. Evaluation of copper ion of antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori and optical, mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young-Hwan [School of Materials Science and Engineering, University of Yonsei, Seoul (Korea, Republic of); Choi, Yu-ri; Kim, Kwang-Mahn [Department and Research Institute of Dental Biomaterials and Bioengineering, College of Dentistry, University of Yonsei, Seoul (Korea, Republic of); Choi, Se-Young, E-mail: sychoi@yonsei.ac.kr [School of Materials Science and Engineering, University of Yonsei, Seoul (Korea, Republic of)

    2012-02-01

    Antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori of copper ion was researched. Also, additional effects of copper ion coating on optical and mechanical properties were researched as well. Copper ion was coated on glass substrate as a thin film to prevent bacteria from growing. Cupric nitrate was used as precursors for copper ion. The copper ion contained sol was deposited by spin coating process on glass substrate. Then, the deposited substrates were heat treated at the temperature range between 200 Degree-Sign C and 250 Degree-Sign C. The thickness of deposited copper layer on the surface was 63 nm. The antibacterial effect of copper ion coated glass on P. aeruginosa, S. typhimurium and H. pylori demonstrated excellent effect compared with parent glass. Copper ion contained layer on glass showed a similar value of transmittance compared with value of parent glass. The 3-point bending strength and Vickers hardness were 209.2 MPa, 540.9 kg/mm{sup 2} which were about 1.5% and 1.3% higher than the value of parent glass. From these findings, it is clear that copper ion coating on glass substrate showed outstanding effect not only in antibacterial activity but also in optical and mechanical properties as well.

  14. Thin films

    International Nuclear Information System (INIS)

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  15. Aspects of the SrO-CuO-TiO2 Ternary System Related to the Deposition of SrTiO3 and Copper-Doped SrTiO3 Thin-Film Buffer Layers

    Energy Technology Data Exchange (ETDEWEB)

    Ayala, Alicia [Univ. of New Mexico, Albuquerque, NM (United States)

    2004-12-20

    YBa2Cu3O27-δ (YBCO) coated conductors are promising materials for large-scale superconductivity applications. One version of a YBCO coated conductor is based on ion beam assisted deposition (IBAD) of magnesium oxide (MgO) onto polycrystalline metal substrates. SrTiO3 (STO) is often deposited by physical vapor deposition (PVD) methods as a buffer layer between the YBCO and IBAD MgO due to its chemical stability and lattice mismatch of only ~1.5% with YBCO. In this work, some aspects of the stability of STO with respect to copper (Cu) and chemical solution deposition of STO on IBAD MgO templates were examined. Solubility limits of Cu in STO were established by processing Cu-doped STO powders by conventional bulk preparation techniques. The maximum solubility of Cu in STO was ~1% as determined by transmission electron microscopy (TEM) and Rietveld refinements of x-ray diffraction (XRD) data. XRD analysis, performed in collaboration with NIST, on powder compositions on the STO/SrCuO2 tie line did not identify any ternary phases. SrCu0.10T0.90Oy buffer layers were prepared by pulsed laser deposition (PLD) and CSD on IBAD MgO flexible metallic textured tapes. TEM analysis of a ~100 nm thick SrCu0.10Ti0.90Oy buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. A ~600 nm thick YBCO film, deposited onto the SrCu0.10Ti0.90Oy buffer by PLD, exhibited a Tc of 87 K and critical current density (Jc) of ~1 MA/cm2. STO and Cu-doped STO thin films by CSD were ~30 nm thick. The in plane alignment (FWHM) after deposition of the STO improved by ~1° while it degraded by ~2° with the SrCu0.05TiOy buffer. YBCO was deposited by PLD on the STO and SrCu0.05TiOy buffers. The in plane alignment (FWHM) of the YBCO with the STO buffer layer

  16. Fabrication and applications of copper sulfide (CuS) nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Shamraiz, Umair, E-mail: umairshamraiz@gmail.com; Hussain, Raja Azadar, E-mail: hussainazadar@gamil.com; Badshah, Amin, E-mail: aminbadshah@yahoo.com

    2016-06-15

    This review article presents different fabrication procedures (under the headlines of solvothermal routes, aerosol methods, solution methods and thermolysis), and applications (photocatalytic degradation, ablation of cancer cells, electrode material in lithium ion batteries and in gas sensing, organic solar cells, field emission properties, super capacitor applications, photoelectrochemical performance of QDSCs, photocatalytic reduction of organic pollutants, electrochemical bio sensing, enhanced PEC characteristics of pre-annealed CuS film electrodes) of copper sulfide (Covellite). - Highlights: • This review article presents the synthesis and applications of copper sulfide. • CuS has been used over the years for different applications in nanoscience. • Different synthetic protocols are followed for their preparation which help in the possible modifications in the morphology of CuS.

  17. Linking strain anisotropy and plasticity in copper metallization

    International Nuclear Information System (INIS)

    Murray, Conal E.; Jordan-Sweet, Jean; Priyadarshini, Deepika; Nguyen, Son

    2015-01-01

    The elastic anisotropy of copper leads to significant variation in the x-ray elastic constants (XEC), which link diffraction-based strain measurements to stress. An accurate depiction of the mechanical response in copper thin films requires a determination of an appropriate grain interaction model that lies between Voigt and Reuss limits. It is shown that the associated XEC weighting fraction, x*, between these limits provides a metric by which strain anisotropy can be quantified. Experimental values of x*, as determined by a linear regression scheme of diffraction data collected from multiple reflections, reveal the degree of strain anisotropy and its dependence on plastic deformation induced during in-situ and ex-situ thermal treatments

  18. Development of technique for AR coating and nickel and copper metallization of solar cells. FPS Project: Product development

    Science.gov (United States)

    Taylor, W.

    1982-01-01

    Printed nickel overplated with copper and applied on top of a predeposited silicon nitride antireflective coating system for metallizing solar cells was analyzed. The ESL D and E paste formulations, and the new formulations F, G, H, and D-1 were evaluated. The nickel thick films were tested after firing for stability in the cleaning and plating solutions used in the Vanguard-Pacific brush plating process. It was found that the films are very sensitive to the leaning and alkaline copper solutions. Less sensitivity was displayed to the neutral copper solution. Microscopic and SEM observations show segregation of frit at the silicon nitride thick film interface with loose frit residues after lifting off plated grid lines.

  19. Electrically continuous graphene from single crystal copper verified by terahertz conductance spectroscopy and micro four-point probe

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Pizzocchero, Filippo; Jessen, Bjarke Sørensen

    2014-01-01

    noninvasive conductance characterization methods: ultrabroadband terahertz time-domain spectroscopy and micro four-point probe, which probe the electrical properties of the graphene film on different length scales, 100 nm and 10 μm, respectively. Ultrabroadband terahertz time-domain spectroscopy allows......- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two....... Micro four-point probe resistance values measured on graphene grown on single crystalline copper in two different voltage-current configurations show close agreement with the expected distributions for a continuous 2D conductor, in contrast with previous observations on graphene grown on commercial...

  20. Nuclear films

    International Nuclear Information System (INIS)

    Malone, Peter.

    1985-01-01

    This booklet is a resource for the study of feature films that highlight the theme of nuclear war. It provides basic credits and brief indication of the theme, treatment, quality and particular notable aspects; and a series of questions raised by the film. Seventy feature films and thirty documentaries are examined

  1. Copper tailings in stucco mortars

    Directory of Open Access Journals (Sweden)

    Osvaldo Pavez

    Full Text Available Abstract This investigation addressed the evaluation of the use of copper tailings in the construction industry in order to reduce the impact on the environment. The evaluation was performed by a technical comparison between stucco mortars prepared with crushed conventional sand and with copper tailings sand. The best results were achieved with the stucco mortars containing tailings. The tailings presented a fine particles size distribution curve different from that suggested by the standard. The values of compressive strength, retentivity, and adherence in the stucco mortars prepared with copper tailings were much higher than those obtained with crushed sand. According to the results from this study, it can be concluded that the preparation of stucco mortars using copper tailings replacing conventional sand is a technically feasible alternative for the construction industry, presenting the benefit of mitigating the impact of disposal to the environment.

  2. The copper deposits of Michigan

    Science.gov (United States)

    Butler, B.S.; Burbank, W.S.

    1929-01-01

    The copper district of Keweenaw Point, in the northern peninsula of Michigan, is the second largest producer of copper in the world.  The output of the district since 1845 has been more than 7,500,000,000 pounds and showed a rather steady and consistent increase from the beginning of production to the end of the World War in 1918, since which there has been a marked decrease.

  3. Copper atomic-scale transistors.

    Science.gov (United States)

    Xie, Fangqing; Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen; Schimmel, Thomas

    2017-01-01

    We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO 4 + H 2 SO 4 ) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes ( U bias ) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1 G 0 ( G 0 = 2e 2 /h; with e being the electron charge, and h being Planck's constant) or 2 G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  4. Atmospheric corrosion effects on copper

    International Nuclear Information System (INIS)

    Franey, J.P.

    1985-01-01

    Studies have been performed on the naturally formed patina on various copper samples. Samples have been obtained from structures at AT and T Bell Laboratories, Murray Hill, NJ (40,2,1 and <1 yr) and the Statue of Liberty (100 yr). The samples show a distinct layering effect, that is, the copper base material shows separate oxide and basic sulfate layers on all samples, indicating that patina is not a homogeneous mixture of oxides and basic sulfates

  5. Chronic copper poisoning in lambs

    Energy Technology Data Exchange (ETDEWEB)

    Ross, D B

    1964-08-08

    This communication presented evidence of the elevation of plasma GOT (glutamic oxaloacetic transaminase or aspartate transaminase) concentration during the development of copper toxicity in some experimental lambs, and also demonstrated that plasma GOT concentration can be used to assess the course of the disease during treatment. A group of Kerry Hill lambs were fed 1 1/2 lb per day of a proprietary concentrate containing 40 parts of copper per million on a dry-matter basis in addition to hay and water ad lib. Data was included for the plasma GOT concentrations of the lambs, bled weekly after weaning from pasture to this diet. There was some variation between the individual lambs, and in one there was no increase in plasma GOT by the 20th week when all the surviving lambs were slaughtered. The concentrations of copper found in the caudate lobe of the liver and in the kidney cortex post mortem were given. The overall findings showed that the liver gave a reliable indication of the copper status of an animal whereas the kidney cortex copper concentration was a better criterion for the diagnosis of copper poisoning and was in agreement with the results of Eden, Todd, and Grocey and Thompson. Observations demonstrated the benefits resulting from the early diagnosis of chronic copper poisoning in lambs, when treatment of affected animals may be commenced before the haemolytic crisis develops. Treatment included reducing the copper intake and dosing with ammonium molybdate and sodium sulfate, and the plasma GOT concentration may be used to assess the rate of recovery. 4 references, 3 tables.

  6. Copper sulphate poisoning in horses

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, M

    1975-01-01

    In the archives of the Clinic for Internal Diseases of Domestic Animals at the Veterinary Faculty of Zagreb University some thirty cases of horse disease diagnosed as copper sulphate poisoning were noted. The data correspond in many respects to the clinical findings of copper sulphate poisoning in other domestic animals. A series of experimental horse poisonings were undertaken in order to determine the toxicity of copper sulphate. The research results are as follows: Horses are sensitive to copper sulphate. Even a single application of 0.125 g/kg body weight in 1% concentration by means of incubation into the stomach causes stomach and gut disturbances and other poisoning symptoms. Poisoning occurs in two types: acute and chronic. The former appears after one to three applications of copper sulphate solution and is characterized by gastroenteritis, haemolysis, jaundice and haemoglobinuria with signs of consecutive damage of kidney, liver and other organs. The disease, from the first application to death lasts for two weeks. Chronic poisoning is caused by ingestion of dry copper sulphate in food (1% solution dried on hay or clover) for two or more months. There are chronic disturbances of stomach and gut and loss of weight, and consecutive (three to four) haemolytic crises similar to those of acute poisoning. From the beginning of poisoning to death six or more months can elapse.

  7. Genome Sequences of Two Copper-Resistant Escherichia coli Strains Isolated from Copper-Fed Pigs

    DEFF Research Database (Denmark)

    Lüthje, Freja L.; Hasman, Henrik; Aarestrup, Frank Møller

    2014-01-01

    The draft genome sequences of two copper-resistant Escherichia coli strains were determined. These had been isolated from copper-fed pigs and contained additional putative operons conferring copper and other metal and metalloid resistances.......The draft genome sequences of two copper-resistant Escherichia coli strains were determined. These had been isolated from copper-fed pigs and contained additional putative operons conferring copper and other metal and metalloid resistances....

  8. Copper and brass aged at open circuit potential in slightly alkaline solutions

    International Nuclear Information System (INIS)

    Procaccini, R.; Vazquez, M.; Cere, S.

    2009-01-01

    Surface oxide films were grown on 99.99% copper and brass (copper-zinc alloy, Cu77Zn21Al2) in 0.1 mol L -1 borax solution at open circuit potential and were characterized using various experimental techniques. The composition of the passive films formed in situ on the different materials was studied using differential reflectance spectroscopy. The thickness of the oxide layers on copper and brass was compared by chronopotentiometric curves and potentiodynamic reductions. The electrical properties of each oxide were analyzed by means of electrochemical impedance spectroscopy. Their influence on the oxygen reduction reaction was also investigated using voltammetry hydrodynamic tools such as the rotating disk electrode. The results show that the incorporation of Zn to Cu in brass changes the composition and the thickness of the surface film. The films grown on brass tend to be thicker but less resistive and Zn compounds incorporate to the film. This is supported by results from reflectance and impedance spectroscopy. The kinetics of oxygen reduction is strongly inhibited on oxidized electrodes, particularly in the case of brass. The global number of exchanged electrons remains close to four and seems to be independent of the presence of surface oxides.

  9. Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

    International Nuclear Information System (INIS)

    Ee, Y.C.; Chen, Z.; Law, S.B.; Xu, S.; Yakovlev, N.L.; Lai, M.Y.

    2006-01-01

    Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti x Si y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 deg. C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers

  10. RF Characterization of Niobium Films for Superconducting Cavities

    CERN Document Server

    Aull† , S; Doebert, S; Junginger, T; Ehiasarian, AP; Knobloch, J; Terenziani, G

    2013-01-01

    The surface resistance RS of superconductors shows a complex dependence on the external parameters such as temperature, frequency or radio-frequency (RF) field. The Quadrupole Resonator modes of 400, 800 and 1200 MHz allow measurements at actual operating frequencies of superconducting cavities. Niobium films on copper substrates have several advantages over bulk niobium cavities. HIPIMS (High-power impulse magnetron sputtering) is a promising technique to increase the quality and therefore the performance of niobium films. This contribution will introduce CERNs recently developed HIPIMS coating apparatus. Moreover, first results of niobium coated copper samples will be presented, revealing the dominant loss mechanisms.

  11. Ductile film delamination from compliant substrates using hard overlayers.

    Science.gov (United States)

    Cordill, M J; Marx, V M; Kirchlechner, C

    2014-11-28

    Flexible electronic devices call for copper and gold metal films to adhere well to polymer substrates. Measuring the interfacial adhesion of these material systems is often challenging, requiring the formulation of different techniques and models. Presented here is a strategy to induce well defined areas of delamination to measure the adhesion of copper films on polyimide substrates. The technique utilizes a stressed overlayer and tensile straining to cause buckle formation. The described method allows one to examine the effects of thin adhesion layers used to improve the adhesion of flexible systems.

  12. Use of copper radioisotopes in investigating disorders of copper metabolism

    International Nuclear Information System (INIS)

    Camakaris, J.; Voskoboinik, I.; Brooks, H.; Greenough, M.; Smith, S.; Mercer, J.

    1998-01-01

    Full text: Copper is an essential trace element for life as a number of vital enzymes require it. Copper deficiency can lead to neurological disorders, osteoporosis and weakening of arteries. However Cu is also highly toxic and homeostatic mechanisms have evolved to maintain Cu at levels which satisfy requirements but do not cause toxicity. Toxicity is mediated by the oxidative capacity of Cu and its ability to generate toxic free radicals. There are several acquired and inherited diseases due to either Cu toxicity or Cu deficiency. The study of these diseases facilitates identification of genes and proteins involved in copper homeostasis, and this in turn will provide rational therapeutic approaches. Our studies have focused on Menkes disease in humans which is an inherited and usually lethal copper deficiency. Using copper radioisotopes 64 Cu (t 1/2 = 12.8 hr) and 67 Cu (t 1/2 = 61 hr) we have studied the protein which is mutated in Menkes disease. This is a transmembrane copper pump which is responsible for absorption of copper into the body and also functions to pump out excess Cu from cells when Cu is elevated. It is therefore a vital component of normal Cu homeostasis. We have provided the first biochemical evidence that the Menkes protein functions as a P-type ATPase Cu pump (Voskoboinik et al., FEBS Letters, in press) and these data will be discussed. The assay involved pumping of radiocopper into purified membrane vesicles. Furthermore we have transfected normal and mutant Menkes genes into cells and are carrying out structure-function studies. We are also studying the role of amyloid precursor protein (APP) as a Cu transport protein in order to determine how Cu regulates this protein and its cleavage products. These studies will provide vital information on the relationship between Cu and APP and processes which lead to Alzheimers disease

  13. Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

    Energy Technology Data Exchange (ETDEWEB)

    Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

    2014-09-07

    Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable β-W phase.

  14. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  15. NID Copper Sample Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Zhu, Zihua

    2011-02-01

    The current focal point of the nuclear physics program at PNNL is the MAJORANA DEMONSTRATOR, and the follow-on Tonne-Scale experiment, a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0νββ). This experiment requires the use of germanium isotopically enriched in 76Ge. The DEMONSTRATOR will utilize 76Ge from Russia, but for the Tonne-Scale experiment it is hoped that an alternate technology under development at Nonlinear Ion Dynamics (NID) will be a viable, US-based, lower-cost source of separated material. Samples of separated material from NID require analysis to determine the isotopic distribution and impurities. The MAJORANA DEMONSTRATOR is a DOE and NSF funded project with a major science impact. DOE is funding NID through an SBIR grant for development of their separation technology for application to the Tonne-Scale experiment. The Environmental Molecular Sciences facility (EMSL), a DOE user facility at PNNL, has the required mass spectroscopy instruments for making these isotopic measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR and for the development of the future separation technology required for the Tonne-Scale experiment. A sample of isotopically separated copper was provided by NID to PNNL for isotopic analysis as a test of the NID technology. The results of that analysis are reported here.

  16. NID Copper Sample Analysis

    International Nuclear Information System (INIS)

    Kouzes, Richard T.; Zhu, Zihua

    2011-01-01

    The current focal point of the nuclear physics program at PNNL is the MAJORANA DEMONSTRATOR, and the follow-on Tonne-Scale experiment, a large array of ultra-low background high-purity germanium detectors, enriched in 76 Ge, designed to search for zero-neutrino double-beta decay (0νββ). This experiment requires the use of germanium isotopically enriched in 76 Ge. The DEMONSTRATOR will utilize 76 Ge from Russia, but for the Tonne-Scale experiment it is hoped that an alternate technology under development at Nonlinear Ion Dynamics (NID) will be a viable, US-based, lower-cost source of separated material. Samples of separated material from NID require analysis to determine the isotopic distribution and impurities. The MAJORANA DEMONSTRATOR is a DOE and NSF funded project with a major science impact. DOE is funding NID through an SBIR grant for development of their separation technology for application to the Tonne-Scale experiment. The Environmental Molecular Sciences facility (EMSL), a DOE user facility at PNNL, has the required mass spectroscopy instruments for making these isotopic measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR and for the development of the future separation technology required for the Tonne-Scale experiment. A sample of isotopically separated copper was provided by NID to PNNL for isotopic analysis as a test of the NID technology. The results of that analysis are reported here.

  17. Improving Beneficiation of Copper and Iron from Copper Slag by Modifying the Molten Copper Slag

    Directory of Open Access Journals (Sweden)

    Zhengqi Guo

    2016-04-01

    Full Text Available In the paper, a new technology was developed to improve the beneficiation of copper and iron components from copper slag, by modifying the molten slag to promote the mineralization of valuable minerals and to induce the growth of mineral grains. Various parameters, including binary basicity, dosage of compound additive, modification temperature, cooling rate and the end point temperature of slow cooling were investigated. Meanwhile, optical microscope, scanning electron microscope and energy dispersive spectrometer (SEM-EDS was employed to determine the mineralogy of the modified and unmodified slag, as well as to reveal the mechanisms of enhancing beneficiation. The results show that under the proper conditions, the copper grade of rougher copper concentrate was increased from 6.43% to 11.04%, iron recovery of magnetic separation was increased significantly from 32.40% to 63.26%, and other evaluation indexes were changed slightly, in comparison with unmodified copper slag. Moreover, matte and magnetite grains in the modified slag aggregated together and grew obviously to the mean size of over 50 μm, resulting in an improvement of beneficiation of copper and iron.

  18. Renal cortex copper concentration in acute copper poisoning in calves

    Directory of Open Access Journals (Sweden)

    Luis E. Fazzio

    2012-01-01

    Full Text Available The aim of this study was to estimate the diagnostic value of renal cortex copper (Cu concentration in clinical cases of acute copper poisoning (ACP. A total of 97 calves that died due to subcutaneous copper administration were compiled in eleven farms. At least, one necropsy was conducted on each farm and samples for complementary analysis were taken. The degree of autolysis in each necropsy was evaluated. The cases appeared on extensive grazing calf breeding and intensive feedlot farms, in calves of 60 to 200 kg body weight. Mortality varied from 0.86 to 6.96 %, on the farms studied. The first succumbed calf was found on the farms between 6 and 72 hours after the susbcutaneous Cu administration. As discrepancies regarding the reference value arose, the local value (19.9 parts per million was used, confirming the diagnosis of acute copper poisoning in 93% of the analyzed kidney samples. These results confirm the value of analysis of the cortical kidney Cu concentration for the diagnosis of acute copper poisoning.

  19. Study of physicochemical stability of the copper/polyphenylquinoxaline interfaces

    Science.gov (United States)

    Even, R.; Palleau, J.; Oberlin, J. C.; Pantel, R.; Laviale, D.; Templier, F.; Torres, J.; Giustiniani, R.; Cros, A.

    Thin film technologies are now applied in building up multilayered chip to chip interconnections to achieve agressive requirement such as high electrical performance or extreme compactness. Copper as conductor and a new polymeric material, a poly phenyl quinoxaline, as dielectric have been chose to fulfill demanding electrical and physical conditions. Thermal stability at the interface Cu/polymer and polymer/Cu during polymer curing process is very important to preserve good adhesion between the conductor and dielectric materials. We have studied in this work the interfacial behavior as a function of annealing temperature and of annealing atmosphere.

  20. Copper metallurgy at the crossroads

    Directory of Open Access Journals (Sweden)

    Habashi F.

    2007-01-01

    Full Text Available Copper technology changed from the vertical to the horizontal furnace and from the roast reaction to converting towards the end of the last century. However, the horizontal furnace proved to be an inefficient and polluting reactor. As a result many attempts were made to replace it. In the past 50 years new successful melting processes were introduced on an industrial scale that were more energy efficient and less polluting. In addition, smelting and converting were conducted in a single reactor in which the concentrate was fed and the raw copper was produced. The standing problem in many countries, however, is marketing 3 tonnes of sulfuric acid per tonne of copper produced as well as emitting large amounts of excess SO2 in the atmosphere. Pressure hydrometallurgy offers the possibility of liberating the copper industry from SO2 problem. Heap leaching technology has become a gigantic operation. Combined with solvent extraction and electrowinning it contributes today to about 20% of copper production and is expected to grow. Pressure leaching offers the possibility of liberating the copper industry from SO2 problem. The technology is over hundred years old. It is applied for leaching a variety of ores and concentrates. Hydrothermal oxidation of sulfide concentrates has the enormous advantage of producing elemental sulfur, hence solving the SO2 and sulfuric acid problems found in smelters. Precipitation of metals such as nickel and cobalt under hydrothermal conditions has been used for over 50 years. It has the advantage of a compact plant but the disadvantage of producing ammonium sulfate as a co-product. In case of copper, however, precipitation takes place without the need of neutralizing the acid, which is a great advantage and could be an excellent substitute for electrowinning which is energy intensive and occupies extensive space. Recent advances in the engineering aspects of pressure equipment design open the door widely for increased

  1. Pulsed-DC selfsputtering of copper

    International Nuclear Information System (INIS)

    Wiatrowski, A; Posadowski, W M; Radzimski, Z J

    2008-01-01

    At standard magnetron sputtering conditions (argon pressure ∼0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (∼550W/cm 2 ). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%

  2. Pulsed-DC selfsputtering of copper

    Science.gov (United States)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-03-01

    At standard magnetron sputtering conditions (argon pressure ~0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (~550W/cm2). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%.

  3. Imprinting of metal receptors into multilayer polyelectrolyte films: fabrication and applications in marine antifouling† †Electronic supplementary information (ESI) available: FTIR, NMR spectra of synthesized polymers, XPS spectra and AFM images of non-cross linked and cross linked LBLA and LBLB films, UV-Visible absorption spectra of copper complexation with PAH-His, QCM data of LBLA and LBLB films and stability of the films are provided in the electronic supplementary information. See DOI: 10.1039/c4sc02367f Click here for additional data file.

    Science.gov (United States)

    Puniredd, Sreenivasa Reddy; Go, Dewi Pitrasari; Zhu, Xiaoying; Guo, Shifeng; Ming Teo, Serena Lay; Chen Lee, Serina Siew

    2015-01-01

    Polymeric films constructed using the layer-by-layer (LbL) fabrication process were employed as a platform for metal ion immobilization and applied as a marine antifouling coating. The novel Cu2+ ion imprinting process described is based on the use of metal ion templates and LbL multilayer covalent cross-linking. Custom synthesized, peptide mimicking polycations composed of histidine grafted poly(allylamine) (PAH) to bind metal ions, and methyl ester containing polyanions for convenient cross-linking were used in the fabrication process. Two methods of LbL film formation have been investigated using alternate polyelectrolyte deposition namely non-imprinted LbLA, and imprinted LbLB. Both LbL films were cross linked at mild temperature to yield covalent bridging of the layers for improved stability in a sea water environment. A comparative study of the non-imprinted LbLA films and imprinted LbLB films for Cu2+ ion binding capacity, leaching rate and stability of the films was performed. The results reveal that the imprinted films possess enhanced affinity to retain metal ions due to the preorganization of imidazole bearing histidine receptors. As a result the binding capacity of the films for Cu2+ could be improved by seven fold. Antifouling properties of the resulting materials in a marine environment have been demonstrated against the settlement of barnacle larvae, indicating that controlled release of Cu ions was achieved. PMID:28966763

  4. Investigation of copper nuclei

    International Nuclear Information System (INIS)

    Delfini, M.G.

    1983-01-01

    An extensive study has been performed on copper isotopes in the mass region A=63-66. The results of a precise measurement are presented on the properties of levels of 64 Cu and 66 Cu. They were obtained by bombarding the 63 Cu and 65 Cu nuclei with neutrons. The gamma spectra collected after capture of thermal, 2-keV, 24-keV neutrons have been analysed and combined to give a rather extensive set of precise level energies and gamma transition strengths. From the angular distribution of the gamma rays it is possible to obtain information concerning the angular momentum J of several low-lying states. The level schemes derived from such measurements have been used as a test for calculations in the framework of the shell model. The spectral distributions of eigenstates in 64 Cu for different configuration spaces are presented and discussed. In this study the relative importance of configurations with n holes in the 1f7/2 shell with n up to 16, are investigated. It is found that the results strongly depend on the values of the single-particle energies. The results of the spectral-distribution method were utilized for shell-model calculations. From the information obtained from the spectral analysis it was decided to adopt a configuration space which includes up to one hole in the 1f7/2 shell and up to two particles in the 1g9/2 shell. Further, restrictions on seniority and on the coupling of the two particles in the 1g9/2 orbit have been applied and their effects have been studied. It is found that the calculated excitation energies reproduce the measured values in a satisfactory way, but that some of the electromagnetic properties are less well in agreement with experimental data. (Auth.)

  5. Effect of annealing temperature on the PEC performance of electrodeposited copper oxides

    Science.gov (United States)

    Marathey, Priyanka; Pati, Ranjan; Mukhopadhyay, Indrajit; Ray, Abhijit

    2018-05-01

    In this work, we have deposited Cu2O film on fluorine doped tin oxide (FTO) substrate by electrodeposition. Pure CuO phase has been obtained by annealing the electrodeposited Cu2O film at optimized temperature (500°C) for two hours in air. Copper(I) oxide films showed good photo response with a current density of 0.54mA/cm2 at 0 V vs RHE. It is evident from UV-Visible spectroscopic analysis that the bandgap of Cu(I) and Cu(II) oxides differs from each other resulting in significant change in photo current for these two phases, observed in the PEC study. However CuO film showed better stability as compared to Cu2O film.

  6. LIGNOCELLULOSE NANOCOMPOSITE CONTAINING COPPER SULFIDE

    Directory of Open Access Journals (Sweden)

    Sanchi Nenkova

    2011-04-01

    Full Text Available Copper sulfide-containing lignocellulose nanocomposites with improved electroconductivity were obtained. Two methods for preparing the copper sulfide lignocellulose nanocomposites were developed. An optimization of the parameters for obtaining of the nanocomposites with respect to obtaining improved electroconductivity, economy, and lower quantities and concentration of copper and sulfur ions in waste waters was conducted. The mechanisms and schemes of delaying and subsequent connection of copper sulfides in the lignocellulosic matrix were investigated. The modification with a system of 2 components: cupric sulfate pentahydrate (CuSO4. 5H2O and sodium thiosulfate pentahydrate (Na2S2O3.5H2O for wood fibers is preferred. Optimal parameters were established for the process: 40 % of the reduction system; hydromodule M=1:6; and ratio of cupric sulfate pentahydrate:sodium thiosulfate pentahydrate = 1:2. The coordinative connection of copper ions with oxygen atoms of cellulose OH groups and aromatic nucleus in lignin macromolecule was observed.

  7. Current trends in copper theft prevention

    Energy Technology Data Exchange (ETDEWEB)

    Mastrofrancesco, A. [Electrical Safety Authority, ON (Canada)

    2009-07-01

    Copper is used in electrical wiring, water and gas piping, currency, and in household items. An increase in the price and demand for copper has made copper theft a profitable venture for some thieves. Copper consumed in North America is typically supplied by recycling. Scrap dealers may pay near-market prices for pure copper wires. However, copper theft poses a serious threat to the safety of utility workers and the public. Power outages caused by copper theft are now affecting grid reliability. This paper examined technologies and techniques used to prevent copper theft as part of a security strategy for utilities. Attempts to steal copper can leave utility substations unsecured and accessible to children. The theft of neutral grounds will cause the local distribution company (LDC) to malfunction and may cause power surges in homes as well as appliance fires. Utilities are now looking at using a hybrid steel and copper alternative to prevent copper theft. Asset identification techniques are also being used to identify the original owners of the copper and more easily prosecute thieves. Automated monitoring techniques are also being used to increase substation security. Utilities are also partnering with law enforcement agencies and pressuring governments to require scrap dealers to record who they buy from. It was concluded that strategies to prevent copper theft should be considered as part of an overall security strategy for utilities. tabs., figs.

  8. Copper phthalocyanine and metal free phthalocyanine bulk heterojunction photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Farooq, Amjad, E-mail: amjad.farooq1212@hotmail.com [Wah Engineering College, University of Wah, Wah Cantt. 47040 (Pakistan); GIK Institute of Engineering Sciences and Technology, Topi 23640, Swabi (Pakistan); Karimov, Kh.S. [GIK Institute of Engineering Sciences and Technology, Topi 23640, Swabi (Pakistan); Physical Technical Institute, Aini St. 299/1, Dushanbe 734063 (Tajikistan); Ahmed, Nisar; Ali, Taimoor [GIK Institute of Engineering Sciences and Technology, Topi 23640, Swabi (Pakistan); Khalid Alamgir, M. [National Institute of Vacuum Science and Technology, NCP complex, Islamabad 44000 (Pakistan); Usman, Muhammad [Experimental Physics Laboratories, National Centre for Physics, Quaid-i-Azam University, Islamabad 44000 (Pakistan)

    2015-01-15

    In this study we present the dependence of electrical properties of copper phthalocyanine (CuPc) and metal free phthalocyanine (H{sub 2}Pc) bulk heterojunction structure under different illumination levels. To fabricate the device on ITO coated glass substrate the bulk heterojunction thin film of CuPc and H{sub 2}Pc with thickness varying from 100 nm to 300 nm are deposited by thermal evaporator. Aluminum thin film was deposited by thermal evaporation as a top contact. The optical properties of the fabricated device are investigated using UV–vis spectroscopy. The current-voltage characteristics in dark and under illumination show that the device is sensitive towards visible light. The absorption spectrum describes its photo sensitivity in the range of wavelength from 200 nm to 850 nm. Simulation of current-intensity of light curve is carried out and experimental results are found in good agreement with simulated ones.

  9. Copper phthalocyanine and metal free phthalocyanine bulk heterojunction photodetector

    International Nuclear Information System (INIS)

    Farooq, Amjad; Karimov, Kh.S.; Ahmed, Nisar; Ali, Taimoor; Khalid Alamgir, M.; Usman, Muhammad

    2015-01-01

    In this study we present the dependence of electrical properties of copper phthalocyanine (CuPc) and metal free phthalocyanine (H 2 Pc) bulk heterojunction structure under different illumination levels. To fabricate the device on ITO coated glass substrate the bulk heterojunction thin film of CuPc and H 2 Pc with thickness varying from 100 nm to 300 nm are deposited by thermal evaporator. Aluminum thin film was deposited by thermal evaporation as a top contact. The optical properties of the fabricated device are investigated using UV–vis spectroscopy. The current-voltage characteristics in dark and under illumination show that the device is sensitive towards visible light. The absorption spectrum describes its photo sensitivity in the range of wavelength from 200 nm to 850 nm. Simulation of current-intensity of light curve is carried out and experimental results are found in good agreement with simulated ones

  10. Corrosion and biofouling resistance evaluation of 90-10 copper-nickel

    Energy Technology Data Exchange (ETDEWEB)

    Powell, Carol [Consultant to Copper Development Association, UK, Square Covert, Caynham, Ludlow, Shropshire (United Kingdom)

    2004-07-01

    Copper-nickel alloys for marine use were developed for naval applications in the early part of the 20. century with a view to improving the corrosion resistance of condenser tubes and seawater piping. They still enjoy widespread use today not only for many navies but also in commercial shipping, floating production, storage and off loading vessels (FPSOs), and in multistage flash desalination. The two popular alloys contain 90% or 70% copper and differ in strength and maximum sea water velocity levels they can handle but it is the 90-10 copper-nickel (CuNi10Fe1Mn) which is the more economic and extensively used. An additional benefit of this alloy is its high resistance to biofouling: in recent years this has led to sheathing developments particularly for structures and boat hulls. This paper provides a review of the corrosion and biofouling resistance of 90-10 copper-nickel based on laboratory test data and documented experience of the alloy in marine environments. Particular attention is given to exposure trials over 8 years in Langstone Harbour, UK, which have recently been completed by Portsmouth University on behalf of the Nickel Institute. These examined four sheathing products; plate and foil as well as two composite products with rubber backing. The latter involved copper-nickel granules and slit sheet. The trial results are consistent with the behaviour of the alloy in the overall review. There is an inherent high resistance to marine biofouling when freely exposed. Prolonged exposure to quiet conditions can result in some growth of marine organisms but this is loosely attached and can readily be removed by wiping or a light scraping. The good corrosion resistance of 90-10 copper-nickel in sea water is also confirmed and associated with the formation of a thin, complex, protective and predominantly cuprous oxide surface film, which forms and matures naturally on exposure to seawater. Sound initial oxide film formation is also known to help protect against

  11. Film processing

    International Nuclear Information System (INIS)

    Abdul Nassir Ibrahim; Azali Muhammad; Ab. Razak Hamzah; Abd. Aziz Mohamed; Mohamad Pauzi Ismail

    2008-01-01

    The processing was made not only to show what are in the film but also to produce radiograph with high quality where the information gathered really presented level of the quality of the object inspected. Besides that, good procedure will make the film with good quality can keep the film in long time for reference. Here, more detailed on how the dark room functioned and its design. So, the good procedure while processed the film will be discussed detailed in this chapter from entering the dark room to exit from there.

  12. Demens Film

    DEFF Research Database (Denmark)

    Jensen, Anders Møller

    2012-01-01

    Vi vil skabe film til mennesker med demens – ikke film om demens sygdommen eller beretninger om livet og hverdagen med en kronisk lidelse. Filmene skal medvirke til at frembringe en behagelig stemning omkring og hos mennesker med demens, så hverdagen bliver så tryg som mulig. Filmene skal samtidig...... var at afgrænse og prioritere projektet, samt komme med anbefalinger omkring hvad der er vigtigt, i forbindelse med produktion af film målrettet mennesker med demens. Resultat af ekspertgruppen sammenfattes i denne rapport. Projektet gennemføres som et samarbejde mellem Retrospect Film...

  13. Deposition and characterization of CuInSe2 thin films

    International Nuclear Information System (INIS)

    Dhere, N.G.; Ferreira, C.L.; Cruz, L.R.O.; Mattoso, I.G.; Alves, R.M.P.

    1988-01-01

    CuInSe 2 thin films with 1,3 to 1,7 μm of thickness were deposited by the constituent elements (copper, indium and selenium) in glass substrate. The producted films were characterized by scanning microscopy, X-ray diffraction, Auger electron spectroscopy, Hall effect measures and optical absorption. (C.G.C.) [pt

  14. Microscale and nanoscale hierarchical structured mesh films with superhydrophobic and superoleophilic properties induced by long-chain fatty acids

    International Nuclear Information System (INIS)

    Wang Shutao; Song Yanlin; Jiang Lei

    2007-01-01

    Inspired by the lotus effect, we fabricate new microscale and nanoscale hierarchical structured copper mesh films by a simple electrochemical deposition. After modification of the long-chain fatty acid monolayer, these films show superhydrophobic and superoleophilic properties, which could be used for the effective separation of oil and water. The length of the fatty acid chain strongly influences the surface wettability of as-prepared films. It is confirmed that the cooperative effect of the hierarchical structure of the copper film and the nature of the long-chain fatty acid contribute to this unique surface wettability

  15. Mechanochemical reduction of copper sulfide

    DEFF Research Database (Denmark)

    Balaz, P.; Takacs, L.; Jiang, Jianzhong

    2002-01-01

    The mechanochemical reduction of copper sulfide with iron was induced in a Fritsch P-6 planetary mill, using WC vial filled with argon and WC balls. Samples milled for specific intervals were analyzed by XRD and Mossbauer spectroscopy. Most of the reaction takes place during the first 10 min...... of milling and only FeS and Cu are found after 60 min. The main chemical process is accompanied by phase transformations of the sulfide phases as a result of milling. Djurleite partially transformed to chalcocite and a tetragonal copper sulfide phase before reduction. The cubic modification of FeS was formed...... first, transforming to hexagonal during the later stages of the process. The formation of off-stoichiometric phases and the release of some elemental sulfur by copper sulfide are also probable....

  16. Laser sintering of copper nanoparticles

    International Nuclear Information System (INIS)

    Zenou, Michael; Saar, Amir; Ermak, Oleg; Kotler, Zvi

    2014-01-01

    Copper nanoparticle (NP) inks serve as an attractive potential replacement to silver NP inks in functional printing applications. However their tendency to rapidly oxidize has so far limited their wider use. In this work we have studied the conditions for laser sintering of Cu-NP inks in ambient conditions while avoiding oxidation. We have determined the regime for stable, low-resistivity copper (< ×3 bulk resistivity value) generation in terms of laser irradiance and exposure duration and have indicated the limits on fast processing. The role of pre-drying conditions on sintering outcome has also been studied. A method, based on spectral reflectivity measurements, was used for non-contact monitoring of the sintering process evolution. It also indicates preferred spectral regions for sintering. Finally, we illustrated how selective laser sintering can generate high-quality, fine line (<5 µm wide) and dense copper circuits. (paper)

  17. Copper tolerance of Trichoderma species

    Directory of Open Access Journals (Sweden)

    Jovičić-Petrović Jelena

    2014-01-01

    Full Text Available Some Trichoderma strains can persist in ecosystems with high concentrations of heavy metals. The aim of this research was to examine the variability of Trichoderma strains isolated from different ecosystems, based on their morphological properties and restriction analysis of ITS fragments. The fungal growth was tested on potato dextrose agar, amended with Cu(II concentrations ranging from 0.25 to 10 mmol/l, in order to identify copper-resistant strains. The results indicate that some isolated strains of Trichoderma sp. show tolerance to higher copper concentrations. Further research to examine the ability of copper bioaccumulation by tolerant Trichoderma strains is needed. [Projekat Ministarstva nauke Republike Srbije, br. TR 31080 i br. III 43010

  18. Biliary copper excretion by hepatocyte lysosomes in the rat. Major excretory pathway in experimental copper overload

    International Nuclear Information System (INIS)

    Gross, J.B. Jr.; Myers, B.M.; Kost, L.J.; Kuntz, S.M.; LaRusso, N.F.

    1989-01-01

    We investigated the hypothesis that lysosomes are the main source of biliary copper in conditions of hepatic copper overload. We used a rat model of oral copper loading and studied the relationship between the biliary output of copper and lysosomal hydrolases. Male Sprague-Dawley rats were given tap water with or without 0.125% copper acetate for up to 36 wk. Copper loading produced a 23-fold increase in the hepatic copper concentration and a 30-65% increase in hepatic lysosomal enzyme activity. Acid phosphatase histochemistry showed that copper-loaded livers contained an increased number of hepatocyte lysosomes; increased copper concentration of these organelles was confirmed directly by both x ray microanalysis and tissue fractionation. The copper-loaded rats showed a 16-fold increase in biliary copper output and a 50-300% increase in biliary lysosomal enzyme output. In the basal state, excretory profiles over time were similar for biliary outputs of lysosomal enzymes and copper in the copper-loaded animals but not in controls. After pharmacologic stimulation of lysosomal exocytosis, biliary outputs of copper and lysosomal hydrolases in the copper-loaded animals remained coupled: injection of colchicine or vinblastine produced an acute rise in the biliary output of both lysosomal enzymes and copper to 150-250% of baseline rates. After these same drugs, control animals showed only the expected increase in lysosomal enzyme output without a corresponding increase in copper output. We conclude that the hepatocyte responds to an increased copper load by sequestering excess copper in an increased number of lysosomes that then empty their contents directly into bile. The results provide direct evidence that exocytosis of lysosomal contents into biliary canaliculi is the major mechanism for biliary copper excretion in hepatic copper overload

  19. Figurines in Pietrele: Copper Age ideology

    Directory of Open Access Journals (Sweden)

    Svend Hansen

    2011-12-01

    Full Text Available Major trends in figurine production of the copper age settlement of Pietrele (Romania are discussed. The bone figurines are seen as an ideological innovation of the Early Copper Age system in the Eastern Balkans.

  20. Copper tolerance and virulence in bacteria

    Science.gov (United States)

    Ladomersky, Erik; Petris, Michael J.

    2015-01-01

    Copper (Cu) is an essential trace element for all aerobic organisms. It functions as a cofactor in enzymes that catalyze a wide variety of redox reactions due to its ability to cycle between two oxidation states, Cu(I) and Cu(II). This same redox property of copper has the potential to cause toxicity if copper homeostasis is not maintained. Studies suggest that the toxic properties of copper are harnessed by the innate immune system of the host to kill bacteria. To counter such defenses, bacteria rely on copper tolerance genes for virulence within the host. These discoveries suggest bacterial copper intoxication is a component of host nutritional immunity, thus expanding our knowledge of the roles of copper in biology. This review summarizes our current understanding of copper tolerance in bacteria, and the extent to which these pathways contribute to bacterial virulence within the host. PMID:25652326

  1. A novel compound cleaning solution for benzotriazole removal after copper CMP

    International Nuclear Information System (INIS)

    Gu Zhangbing; Liu Yuling; Gao Baohong; Wang Chenwei; Deng Haiwen

    2015-01-01

    After the chemical mechanical planarization (CMP) process, the copper surface is contaminated by a mass of particles (e.g. silica) and organic residues (e.g. benzotriazole), which could do great harm to the integrated circuit, so post-CMP cleaning is essential. In particular, benzotriazole (BTA) forms a layer of Cu-BTA film with copper on the surface, which leads to a hydrophobic surface of copper. So an effective cleaning solution is needed to remove BTA from the copper surface. In this work, a new compound cleaning solution is designed to solve two major problems caused by BTA: one is removing BTA and the other is copper surface corrosion that is caused by the cleaning solution. The cleaning solution is formed of alkaline chelating agent (FA/O II type), which is used to remove BTA, and a surfactant (FA/O I type), which is used as a corrosion inhibitor. BTA removal is characterized by contact angle measurements and electrochemical techniques. The inhibiting corrosion ability of the surfactant is also characterized by electrochemical techniques. The proposed compound cleaning solution shows advantages in removing BTA without corroding the copper surface. (paper)

  2. Effect of Physical Property and Surface Morphology of Copper Foil at Electrodeposition Parameter

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Tae Gyu; Park, Il Song; Lee, Man Hyung; Seol, Kyeong Won [Chonbuk National University, Jeonju (Korea, Republic of)

    2014-06-15

    The effect of additives, current density and plated temperature on the surface morphology and physical property, during copper electrodeposition on polyimide (PI) film was investigated. Two kinds of additives, Cl and leveler (additive B), were used in this study. Electrochemical experiments were performed in conjunction with SEM, XRD and four-point probe to characterize the morphology and mechanical characteristics of copper electrodeposited in the presence of the additives. The surface roughness, crystal growth orientation and resistivity was controlled by the concentration of additive B. High resistivity and lower peel strength were observed on the surface of the copper layer electroplated in the electrolyte without additive B. However, a uniform surface, lower resistivity and high flexibility were obtained with a combination of 20 ppm Cl and 100 ppm additive B. Large particles were observed on the surface of the copper layer electroplated using a current density of 25 mA/cm{sup 2}, but a uniform surface and lower resistivity were obtained using a current density of 10 mA/cm{sup 2}. One of the required important properties of FCCL is flexibility of the copper foil. High flexibility of FCCL was obtained at a low current density, rather than a high current density. Moreover, a reasonable current density is 20 mA/cm{sup 2}, considering the productivity and mechanical properties of copper foil.

  3. Effects of organic additives on preferred plane and residual stress of copper electroplated on polyimide

    International Nuclear Information System (INIS)

    Kim, Jongsoo; Kim, Heesan

    2010-01-01

    Effects of the preferred plane and the residual stress of an electroplated copper on polyethylene glycol (PEG) and 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonic acid (DPS) were studied. Polyimide film coated with sputtered copper was used as a substrate. Preferred plane, residual stress, and impurity level in the electroplated copper were measured by an X-ray diffractometry (XRD), calculated by Stoney's equation, and analyzed with secondary ion mass spectroscopy (SMS), respectively. With increasing the concentration of PEG, the preferred plane changed in the order (1 0 0) and (1 1 0) while with increasing the concentration of DPS, the preferred plane changed in the order (1 1 0), (1 0 0), and (1 1 1). Based on the modified preferred growth model, where the amount of additive adsorbed on a plane is newly assumed to be proportional to its surface energy in vacuum, the predicted preferred planes correspond to the experimental results. The residual stress of the electroplated copper depended on the type of additive as well as its concentration but was independent of the preferred plane. For example, PEG and DPS induced tensile and compressive residual stresses in the electroplated copper, respectively, and their magnitudes increased with their concentrations. The dependency of residual stress on the additives was explained by the incorporated additives into the electroplated copper.

  4. Human copper transporter 2 is localized in late endosomes and lysosomes and facilitates cellular copper uptake

    NARCIS (Netherlands)

    Berghe, van den P.V.E; Folmer, D.E.; Malingré, H.E.M.; Beurden, van E.; Klomp, A.E.M.; Sluis, van de B.; Merkx, M.; Berger, R.J.; Klomp, L.W.J.

    2007-01-01

    High-affinity cellular copper uptake is mediated by the CTR (copper transporter) 1 family of proteins. The highly homologous hCTR (human CTR) 2 protein has been identified, but its function in copper uptake is currently unknown. To characterize the role of hCTR2 in copper homoeostasis,

  5. Copper nitrate redispersion to arrive at highly active silica-supported copper catalysts

    NARCIS (Netherlands)

    Munnik, P.|info:eu-repo/dai/nl/328228524; Wolters, M.|info:eu-repo/dai/nl/304829560; Gabrielsson, A.; Pollington, S.D.; Headdock, G.; Bitter, J.H.|info:eu-repo/dai/nl/160581435; de Jongh, P.E.|info:eu-repo/dai/nl/186125372; de Jong, K.P.|info:eu-repo/dai/nl/06885580X

    2011-01-01

    In order to obtain copper catalysts with high dispersions at high copper loadings, the gas flow rate and gas composition was varied during calcination of silica gel impregnated with copper nitrate to a loading of 18 wt % of copper. Analysis by X-ray diffraction (XRD), N2O chemisorption, and

  6. Copper and Anesthesia: Clinical Relevance and Management of Copper Related Disorders

    OpenAIRE

    Langley, Adrian; Dameron, Charles T.

    2013-01-01

    Recent research has implicated abnormal copper homeostasis in the underlying pathophysiology of several clinically important disorders, some of which may be encountered by the anesthetist in daily clinical practice. The purpose of this narrative review is to summarize the physiology and pharmacology of copper, the clinical implications of abnormal copper metabolism, and the subsequent influence of altered copper homeostasis on anesthetic management.

  7. 21 CFR 73.1125 - Potassium sodium copper chloropyhllin (chlorophyllin-copper complex).

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Potassium sodium copper chloropyhllin (chlorophyllin-copper complex). 73.1125 Section 73.1125 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT....1125 Potassium sodium copper chloropyhllin (chlorophyllin-copper complex). (a) Identity. (1) The color...

  8. 21 CFR 73.2125 - Potassium sodium copper chlorophyllin (chlorophyllin-copper complex).

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Potassium sodium copper chlorophyllin (chlorophyllin-copper complex). 73.2125 Section 73.2125 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT... § 73.2125 Potassium sodium copper chlorophyllin (chlorophyllin-copper complex). (a) Identity and...

  9. Refining processes in the copper casting technology

    OpenAIRE

    Rzadkosz, S.; Kranc, M.; Garbacz-Klempka, A.; Kozana, J.; Piękoś, M.

    2015-01-01

    The paper presents the analysis of technology of copper and alloyed copper destined for power engineering casts. The casts quality was assessed based on microstructure, chemical content analysis and strength properties tests. Characteristic deoxidising (Logas, Cup) and modifying (ODM2, Kupmod2) formulas were used for the copper where high electrical conductivity was required. Chosen examples of alloyed copper with varied Cr and Zr content were studied, and the optimal heat treatment parameter...

  10. 21 CFR 184.1261 - Copper sulfate.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Copper sulfate. 184.1261 Section 184.1261 Food and... Substances Affirmed as GRAS § 184.1261 Copper sulfate. (a) Copper sulfate (cupric sulfate, CuSO4·5H2O, CAS... the reaction of sulfuric acid with cupric oxide or with copper metal. (b) The ingredient must be of a...

  11. The Bauschinger Effect in Copper

    DEFF Research Database (Denmark)

    Pedersen, Ole Bøcker; Brown, L .M.; Stobbs, W. M.

    1981-01-01

    A study of the Bauschinger effect in pure copper shows that by comparison with dispersion hardened copper the effect is very small and independent of temperature. This suggests that the obstacles to flow are deformable. A simple composite model based on this principle accounts for the data semi......-quantitatively and also accounts for the stored energy of cold-work. An interesting feature of the model is that it shows very clearly that, although dislocation pile-ups may exist, the flow stress of the composite is entirely due to the resistance to dislocation motion in the tangles of forest dislocations....

  12. Cupriferous peat: embryonic copper ore

    Energy Technology Data Exchange (ETDEWEB)

    Fraser, D C

    1961-07-01

    A Canadian peat was found to contain up to 10% (dry weight) Cu, and a mechanism for Cu accumulation in peat was discussed. Wet chemical techniques and x-ray diffraction were utilized to identify Cu compounds. Copper was organically bound in peat as a chelate complex and did not occur as an oxide, sulfide, or as elemental Cu. Because of the low S content of peat the Cu was assumed to be bound to nitrogen or oxygen-containing components. Copper, having a greater affinity for N, tended to form the more stable Cu-N chelate. The element was concentrated as circulating cupriferous ground waters filtered through the peat.

  13. Tunable synthesis of copper nanotubes

    International Nuclear Information System (INIS)

    Kaniukov, E; Yakimchuk, D; Kozlovsky, A; Shlimas, D; Zdorovets, M; Kadyrzhanov, K

    2016-01-01

    Simple method of tunable synthesis of copper nanotubes based on template synthesis was developed. A comprehensive study of the structural, morphological and electrical characteristics of the obtained nanostructures was carried out. Characterization of structural features was made by methods of scanning electron microscopy, energy dispersive spectroscopy and X-ray diffractometry analysis. Evaluation of wall thickness is made by methods of gas permeability. Electrical conductivity of nanotubes was define in the study of their current-voltage characteristics. The possibility to control of copper nanotubes physical properties by variation of the deposition parameters was shown. (paper)

  14. Novel copper (II) alginate hydrogels and their potential for use as anti-bacterial wound dressings

    International Nuclear Information System (INIS)

    Klinkajon, Wimonwan; Supaphol, Pitt

    2014-01-01

    The incorporation of a metal ion, with antimicrobial activity, into an alginate dressing is an attractive approach to minimize infection in a wound. In this work, copper (II) cross-linked alginate hydrogels were successfully prepared using a two-step cross-linking procedure. In the first step, solid alginate films were prepared using a solvent-casting method from soft gels of alginate solutions that had been lightly cross-linked using a copper (II) (Cu 2+ ) sulfate solution. In the second step, the films were further cross-linked in a corresponding Cu 2+ sulfate solution using a dipping method to further improve their dimensional stability. Alginate solution (at 2%w/v) and Cu 2+ sulfate solution (at 2%w/v) in acetate buffer at a low pH provided soft films with excellent swelling behavior. An increase in either Cu 2+ ion concentration or cross-linking time led to hydrogels with more densely-cross-linked networks that limited water absorption. The hydrogels clearly showed antibacterial activity against Escherichia coli, Staphylococcus aureus, methicillin-resistant Staphylococcus aureus (MRSA), Staphylococcus epidermidis and Streptococcus pyogenes, which was proportional to the Cu 2+ ion concentration. Blood coagulation studies showed that the tested copper (II) cross-linked alginate hydrogels had a tendency to coagulate fibrin, and possibly had an effect on pro-thrombotic coagulation and platelet activation. Conclusively, the prepared films are likely candidates as antibacterial wound dressings. (paper)

  15. Selective laser pyrolysis of metallo-organics as a method of forming patterned thin film superconductors

    International Nuclear Information System (INIS)

    Mantese, J.V.; Catalan, A.B.; Sell, J.A.; Meyer, M.S.; Mance, A.M.

    1990-01-01

    This patent describes a method for forming patterned films of superconductive materials forming a solution from the neodecanoates of yttrium, barium and copper. The neodecanoates forming an oxide mixture exhibiting superconductive properties upon subsequent thermal decompositions wherein the oxide mixture is characterized by a ratio of yttrium:barium:copper of approximately 1:2:4, the solution comprising an organic solvent such as xylene; adding to the solution an appropriate dye, depositing a film of the solution having the dye onto a strontium titanate substrate; exposing selective regions of the film with an Argon laser emitting the wavelength of light, such that the exposed regions of the film become insoluble in the xylene; immersing the film into the xylene so that the soluble; unexposed regions of the film are removed from the substrate; heating the film to thermally decompose the neodecanoates into a film containing yttrium, barium and copper oxides; to promote recrystallization and grain growth of the metal oxides within the film and induce a change therein by which the film exhibits superconducting properties

  16. Electrical conduction in composites containing copper core–copper ...

    Indian Academy of Sciences (India)

    Unknown

    of Mott's small polaron hopping conduction model. ... sample exhibited a metallic conduction confirming the formation of a percolative chain of ..... value of εp. Also the oxide layer formation on the initially unoxidized copper particles will increase the resistivity level of the nanocomposite. This is borne out by results shown in ...

  17. Diffusion and adhesion properties of Cu films on polyimide substrates

    International Nuclear Information System (INIS)

    Liang, T.X.; Liu, Y.Q.; Fu, Z.Q.; Luo, T.Y.; Zhang, K.Y.

    2005-01-01

    Copper thin films were prepared on polyimide (PI) substrates by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Titanium nitride (TiN) diffusion barrier layers were deposited between the copper films and the PI substrates by PVD. Auger electron spectroscopy compositional depth profile showed that TiN barrier layer was very effective in preventing copper diffusion into PI substrate even after the Cu/TiN/PI samples were annealed at 300 deg. C for 5 h. For the as-deposited CVD-Cu/PI, CVD-Cu/TiN/PI, and as-deposited PVD-Cu/PI samples, the residual stress in Cu films was very small. Relatively larger residual stress existed in Cu films for PVD-Cu/TiN/PI samples. For PVD-Cu/TiN/PI samples, annealing can increase the peeling strength to the level observed without a diffusion barrier. The adhesion improvement of Cu films by annealing treatment can be attributed to lowering of the residual tensile stress in Cu films

  18. Long-term corrosion of copper in a dilute anaerobic sulfide solution

    Energy Technology Data Exchange (ETDEWEB)

    Chen, J.; Qin, Z. [Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7 (Canada); Shoesmith, D.W., E-mail: dwshoesm@uwo.ca [Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7 (Canada)

    2011-09-30

    The mechanism of corrosion of oxygen-free copper has been studied in stagnant aqueous sulfide solutions using corrosion potential and electrochemical impedance spectroscopy (EIS) measurements. Film structure and composition were examined on surfaces and on cross-sections prepared by focused ion beam (FIB) milling using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Experiments were conducted in anaerobic 5 x 10{sup -5} mol dm{sup -3} Na{sub 2}S + 0.1 mol dm{sup -3} NaCl solutions for exposure periods up to 4000 h ({approx}167 days) to mimic (at least partially) the conditions that could develop on a copper nuclear fuel waste container in a deep geologic repository. The corrosion film formed was a single cellular Cu{sub 2}S layer with a non-uniform thickness. The film thickness increased approximately linearly with immersion time, which implied that the sulfide film formed on the Cu surface is non-protective under these conditions up to this exposure time. The film growth process was controlled by HS{sup -} diffusion partially in the aqueous solution in the pores in the cellular sulfide film and partially in the bulk of the aqueous solution.

  19. 21 CFR 73.2647 - Copper powder.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Copper powder. 73.2647 Section 73.2647 Food and... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2647 Copper powder. (a) Identity and specifications. The color additive copper powder shall conform in identity and specifications to the requirements of § 73...

  20. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...