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Sample records for self-aligning chip mask

  1. Wafer Scale Integration of CMOS Chips for Biomedical Applications via Self-Aligned Masking.

    Science.gov (United States)

    Uddin, Ashfaque; Milaninia, Kaveh; Chen, Chin-Hsuan; Theogarajan, Luke

    2011-12-01

    This paper presents a novel technique for the integration of small CMOS chips into a large area substrate. A key component of the technique is the CMOS chip based self-aligned masking. This allows for the fabrication of sockets in wafers that are at most 5 µm larger than the chip on each side. The chip and the large area substrate are bonded onto a carrier such that the top surfaces of the two components are flush. The unique features of this technique enable the integration of macroscale components, such as leads and microfluidics. Furthermore, the integration process allows for MEMS micromachining after CMOS die-wafer integration. To demonstrate the capabilities of the proposed technology, a low-power integrated potentiostat chip for biosensing implemented in the AMI 0.5 µm CMOS technology is integrated in a silicon substrate. The horizontal gap and the vertical displacement between the chip and the large area substrate measured after the integration were 4 µm and 0.5 µm, respectively. A number of 104 interconnects are patterned with high-precision alignment. Electrical measurements have shown that the functionality of the chip is not affected by the integration process.

  2. A novel micromachined shadow mask system with self-alignment and gap control capability

    International Nuclear Information System (INIS)

    Hong, Jung Moo; Zou Jun

    2008-01-01

    We present a novel micromachined shadow mask system, which is capable of accurate self-alignment and mask-substrate gap control. The shadow mask system consists of a silicon shadow mask and a silicon carrier wafer with pyramidal cavities fabricated with bulk micromachining. Self-alignment and gap control of the shadow mask and the fabrication substrate can readily be achieved by using matching pairs of pyramidal cavities and steel spheres placed between. The layer-to-layer alignment accuracy of the new shadow mask system has been experimentally characterized and verified using both optical and atomic force microscopic measurements. As an application of this new shadow mask system, an organic thin-film transistor (OTFT) using pentacene as the semiconductor layer has been successfully fabricated and tested

  3. Self-aligned mask renewal for anisotropically etched circular micro- and nanostructures

    International Nuclear Information System (INIS)

    Kaspar, Peter; Jäckel, Heinz; Holzapfel, Sebastian; Windhab, Erich J

    2011-01-01

    The top–down fabrication of high aspect ratio circular micro- and nanostructures in silicon nitride is presented. A new method is introduced to increase the aspect ratio of anisotropically etched holes by a factor of more than two with respect to the results obtained from an established dry-etching process. The method is based on the renewal of an etching mask after a first etching step has been completed. Mask renewal is done by line-of-sight deposition of a masking layer on the surface of the sample, which is mounted at an angle with respect to the deposition direction. No additional alignment step is required. The proof of principle is performed for silicon nitride etching through a mask of titanium, but the method has great potential to be applicable to a wide variety of substrate–mask combinations and to find entrance into various engineering fields. Two specific applications are highlighted. Firstly, a thick silicon nitride hardmask is used for the fabrication of deeply etched photonic crystal holes in indium phosphide (InP). For holes of 280 nm diameter, a record aspect ratio of 20 and an overall selectivity of 28.5 between a positive-tone resist layer and InP are reported. Secondly, the use of perforated silicon nitride membranes for droplet formation for applications in food engineering or pharmaceutics is addressed. Preliminary results show a potential for the self-aligned mask renewal method to exceed state-of-the-art membrane quality in terms of pore size, aspect ratio and membrane stability.

  4. Ultrasonic welding for fast bonding of self-aligned structures in lab-on-a-chip systems

    DEFF Research Database (Denmark)

    Kistrup, Kasper; Poulsen, Carl Esben; Hansen, Mikkel Fougt

    2015-01-01

    Ultrasonic welding is a rapid, promising bonding method for the bonding of polymer chips; yet its use is still limited. We present two lab-on-a-chip applications where ultrasonic welding can be preferably applied: (1) Self-aligned gapless bonding of a two-part chip with a tolerance of 50 um; (2...... solutions offered here can significantly help bridge the gap between academia and industry, where the differences in production methods and materials pose a challenge when transferring technology....

  5. A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2014-08-01

    Full Text Available Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV exposure and backside-lift-off (BLO schemes can not only prevent the damage when etching the source/drain (S/D electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs exhibit comparable field-effect mobility (9.5 cm2/V·s, threshold voltage (3.39 V, and subthreshold swing (0.3 V/decade. The delay time of an inverter fabricated using the proposed process was considerably decreased.

  6. A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

    2014-08-11

    Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm²/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased.

  7. Understanding the critical challenges of self-aligned octuple patterning

    Science.gov (United States)

    Yu, Ji; Xiao, Wei; Kang, Weiling; Chen, Yijian

    2014-03-01

    In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process characteristics, cost structure, integration challenges, and layout decomposition. The statistical characteristics of SAOP CD variations such as multi-modality are analyzed and contributions from various features to CDU and MTT (mean-to-target) budgets are estimated. The gap space is found to have the worst CDU+MTT performance and is used to determine the required overlay accuracy to ensure a satisfactory edge-placement yield of a cut process. Moreover, we propose a 5-mask positive-tone SAOP (pSAOP) process for memory FEOL patterning and a 3-mask negative-tone SAOP (nSAOP) process for logic BEOL patterning. The potential challenges of 2-D SAOP layout decomposition for BEOL applications are identified. Possible decomposition approaches are explored and the functionality of several developed algorithm is verified using 2-D layout examples from Open Cell Library.

  8. Planar self-aligned ion implanted InP MISFETS for fast logic applications

    International Nuclear Information System (INIS)

    Cameron, D.C.; Irving, L.D.; Whitehouse, C.R.; Woodward, J.; Lee, D.

    1983-01-01

    The first successful use of ion implantation to fabricate truly self-aligned planar n-channel enhancement-mode indium phosphide MISFITS is reported. The transistors have been fabricated on iron-doped semi-insulating material using PECVD-deposited SiO 2 as the gate dielectric and molybdenum gate electrodes. The self-aligned source and drain contact regions were produced by Si 29 ion implantation using each gate stripe as an implant mask. The devices fabricated to date have exhibited channel mobilities up to value of 2400 cm 2 v -1 s -1 , with excellent uniformity and stability of the device characteristics also being observed. (author)

  9. Development of a Self Aligned CMOS Process for Flash Lamp Annealed Polycrystalline Silicon TFTs

    Science.gov (United States)

    Bischoff, Paul

    The emerging active matrix liquid crystal (AMLCD) display market requires a high performing semiconductor material to meet rising standards of operation. Currently amorphous silicon (a-Si) dominates the market but it does not have the required mobility for it to be used in AMLCD manufacturing. Other materials have been developed including crystallizing a-Si into poly-silicon. A new approach to crystallization through the use of flash lamp annealing (FLA) decreases manufacturing time and greatly improves carrier mobility. Previous work on FLA silicon for the use in CMOS transistors revealed significant lateral dopant diffusion into the channel greatly increasing the minimum channel length required for a working device. This was further confounded by the gate overlap due to misalignment during lithography patterning steps. Through the use of furnace dopant activation instead of FLA dopant activation and a self aligned gate the minimum size transistor can be greatly reduced. A new lithography mask and process flow were developed for the furnace annealing and self aligned gate. Fabrication of the self aligned devices resulted in oxidation of the Molybdenum self aligned gate. Further development is needed to successfully manufacture these devices. Non-self aligned transistors were made simultaneously with self aligned devices and used the furnace activation. These devices showed an increase in sheet resistance from 250 O to 800 O and lower mobility from 380 to 40.2 V/cm2s. The lower mobility can be contributed to an increase in implanted trap density indicating furnace annealing is an inferior activation method over FLA. The minimum transistor size however was reduced from 20 to 5 mum. With improvements in the self aligned process high performing small devices can be manufactured.

  10. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  11. Transcript profiling of common bean (Phaseolus vulgaris L. using the GeneChip® Soybean Genome Array: optimizing analysis by masking biased probes

    Directory of Open Access Journals (Sweden)

    Gronwald John W

    2010-05-01

    Full Text Available Abstract Background Common bean (Phaseolus vulgaris L. and soybean (Glycine max both belong to the Phaseoleae tribe and share significant coding sequence homology. This suggests that the GeneChip® Soybean Genome Array (soybean GeneChip may be used for gene expression studies using common bean. Results To evaluate the utility of the soybean GeneChip for transcript profiling of common bean, we hybridized cRNAs purified from nodule, leaf, and root of common bean and soybean in triplicate to the soybean GeneChip. Initial data analysis showed a decreased sensitivity and accuracy of measuring differential gene expression in common bean cross-species hybridization (CSH GeneChip data compared to that of soybean. We employed a method that masked putative probes targeting inter-species variable (ISV regions between common bean and soybean. A masking signal intensity threshold was selected that optimized both sensitivity and accuracy of measuring differential gene expression. After masking for ISV regions, the number of differentially-expressed genes identified in common bean was increased by 2.8-fold reflecting increased sensitivity. Quantitative RT-PCR (qRT-PCR analysis of 20 randomly selected genes and purine-ureide pathway genes demonstrated an increased accuracy of measuring differential gene expression after masking for ISV regions. We also evaluated masked probe frequency per probe set to gain insight into the sequence divergence pattern between common bean and soybean. The sequence divergence pattern analysis suggested that the genes for basic cellular functions and metabolism were highly conserved between soybean and common bean. Additionally, our results show that some classes of genes, particularly those associated with environmental adaptation, are highly divergent. Conclusions The soybean GeneChip is a suitable cross-species platform for transcript profiling in common bean when used in combination with the masking protocol described. In

  12. Cantilever arrays with self-aligned nanotips of uniform height

    International Nuclear Information System (INIS)

    Koelmans, W W; Peters, T; Berenschot, E; De Boer, M J; Siekman, M H; Abelmann, L

    2012-01-01

    Cantilever arrays are employed to increase the throughput of imaging and manipulation at the nanoscale. We present a fabrication process to construct cantilever arrays with nanotips that show a uniform tip–sample distance. Such uniformity is crucial, because in many applications the cantilevers do not feature individual tip–sample spacing control. Uniform cantilever arrays lead to very similar tip–sample interaction within an array, enable non-contact modes for arrays and give better control over the load force in contact modes. The developed process flow uses a single mask to define both tips and cantilevers. An additional mask is required for the back side etch. The tips are self-aligned in the convex corner at the free end of each cantilever. Although we use standard optical contact lithography, we show that the convex corner can be sharpened to a nanometre scale radius by an isotropic underetch step. The process is robust and wafer-scale. The resonance frequencies of the cantilevers within an array are shown to be highly uniform with a relative standard error of 0.26% or lower. The tip–sample distance within an array of up to ten cantilevers is measured to have a standard error around 10 nm. An imaging demonstration using the AFM shows that all cantilevers in the array have a sharp tip with a radius below 10 nm. The process flow for the cantilever arrays finds application in probe-based nanolithography, probe-based data storage, nanomanufacturing and parallel scanning probe microscopy. (paper)

  13. Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

    International Nuclear Information System (INIS)

    Ooike, N.; Motohisa, J.; Fukui, T.

    2004-01-01

    We propose and demonstrate a novel self-aligning process for fabricating the tungsten (W) gate electrode of GaAs nanowire FETs by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) where SiO 2 /W composite films are used to mask the substrates. First, to study the growth process and its dependence on mask materials, GaAs wire structures were grown on masked substrates partially covered with a single W layer or SiO 2 /W composite films. We found that lateral growth over the masked regions could be suppressed when a wire along the [110] direction and a SiO 2 /W composite mask were used. Using this composite mask, we fabricated GaAs narrow channel FETs using W as a Schottky gate electrode, and we were able to observe FET characteristics at room temperature

  14. Self-aligned photolithography for the fabrication of fully transparent high-voltage devices

    Science.gov (United States)

    Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing; Wang, Tao; Liang, Huili; Du, Xiaolong

    2018-05-01

    High-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. However, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. To resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. High-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. Unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. The photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. The substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. The electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. The presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.

  15. Self-Aligned van der Waals Heterojunction Diodes and Transistors.

    Science.gov (United States)

    Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

    2018-02-14

    A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

  16. Capillary Self-Alignment of Microchips on Soft Substrates

    Directory of Open Access Journals (Sweden)

    Bo Chang

    2016-03-01

    Full Text Available Soft micro devices and stretchable electronics have attracted great interest for their potential applications in sensory skins and wearable bio-integrated devices. One of the most important steps in building printed circuits is the alignment of assembled micro objects. Previously, the capillary self-alignment of microchips driven by surface tension effects has been shown to be able to achieve high-throughput and high-precision in the integration of micro parts on rigid hydrophilic/superhydrophobic patterned surfaces. In this paper, the self-alignment of microchips on a patterned soft and stretchable substrate, which consists of hydrophilic pads surrounded by a superhydrophobic polydimethylsiloxane (PDMS background, is demonstrated for the first time. A simple process has been developed for making superhydrophobic soft surface by replicating nanostructures of black silicon onto a PDMS surface. Different kinds of PDMS have been investigated, and the parameters for fabricating superhydrophobic PDMS have been optimized. A self-alignment strategy has been proposed that can result in reliable self-alignment on a soft PDMS substrate. Our results show that capillary self-alignment has great potential for building soft printed circuits.

  17. Wave drag reduction due to a self-aligning aerodisk

    Science.gov (United States)

    Schnepf, Ch.; Wysocki, O.; Schülein, E.

    2015-06-01

    The effect of a self-aligning aerodisk on the wave drag of a blunt slender body in a pitching maneuver has been numerically investigated. The self-alignment was realized by a coupling of the flow solver and a flight mechanics tool. The slender body was pitched with high repetition rate between α = 0° and 20° at M = 1.41. Even at high α, the concept could align the aerodisk to the oncoming flow. In comparison to the reference body without a self-aligning aerodisk, a distinct drag reduction is achieved. A comparison with existing experimental data shows a qualitatively good agreement considering the shock and separation structure and the kinematics of the aerodisk.

  18. Method for Providing Semiconductors Having Self-Aligned Ion Implant

    Science.gov (United States)

    Neudeck, Philip G. (Inventor)

    2014-01-01

    A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.

  19. Self-aligned metallization on organic semiconductor through 3D dual-layer thermal nanoimprint

    International Nuclear Information System (INIS)

    Jung, Y; Cheng, X

    2014-01-01

    High-resolution patterning of metal structures on organic semiconductors is important to the realization of high-performance organic transistors for organic integrated circuit applications. The traditional shadow mask technique has a limited resolution, precluding sub-micron metal structures on organic semiconductors. Thus organic transistors cannot benefit from scaling into the deep sub-micron region to improve their dc and ac performances. In this work, we report an efficient multiple-level metallization on poly (3-hexylthiophene) (P3HT) with a deep sub-micron lateral gap. By using a 3D nanoimprint mold in a dual-layer thermal nanoimprint process, we achieved self-aligned two-level metallization on P3HT. The 3D dual-layer thermal nanoimprint enables the first metal patterns to have suspending side-wings that can clearly define a distance from the second metal patterns. Isotropic and anisotropic side-wing structures can be fabricated through two different schemes. The process based on isotropic side-wings achieves a lateral-gap in the order of 100 nm (scheme 1). A gap of 60 nm can be achieved from the process with anisotropic side-wings (scheme 2). Because of the capability of nanoscale metal patterning on organic semiconductors with high overlay accuracy, this self-aligned metallization technique can be utilized to fabricate high-performance organic metal semiconductor field-effect transistor. (paper)

  20. A self-aligned gate definition process with submicron gaps

    NARCIS (Netherlands)

    Warmerdam, L.F.P.; Aarnink, Antonius A.I.; Holleman, J.; Wallinga, Hans

    1989-01-01

    A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and smaller are fabricated. The spacing is realized by an edge-etch technique, combined with anisotropic plasma etching of the single poly-silicon layer. Straight gaps with minor width variation are

  1. Self-aligning fixture used in lathe chuck jaw refacing

    Science.gov (United States)

    Linn, C. C.

    1965-01-01

    Self-aligning tool positions and rigidly holds lathe chuck jaws for refacing and truing of the clamping surface. The jaws clamp the fixture in the manner of clamping a workpiece. The fixture can be modified to accommodate four-jawed checks.

  2. Design and fabrication of a self-aligned parallel-plate-type silicon micromirror minimizing the effect of misalignment

    International Nuclear Information System (INIS)

    Yoo, Byung-Wook; Jin, Joo-Young; Jang, Yun-Ho; Kim, Yong-Kweon; Park, Jae-Hyoung

    2009-01-01

    This paper describes a self-alignment method whereby a mirror actuation voltage, corresponding to a specific tilting angle, is unvarying in terms of misalignment during fabrication. A deep silicon etching process is proposed to penetrate the top silicon layer (the micromirror layer) and an amorphous silicon layer (the addressing electrode layer) together, through an aluminum mask pattern, in order to minimize the misalignment effect on the micromirror actuation. The size of a fabricated mirror plate is 250 × 250 × 4 µm 3 . A pair of amorphous silicon electrodes under the mirror plate is about half the size of the mirror plate individually. Numerical analysis associated with calculating the pull-in voltage and the bonding misalignment is performed to verify the self-alignment concepts focused upon in this paper. Curves of the applied voltage versus the tilt angle of the self-aligned micromirror are observed using a position sensing detector in order to compare the measurement results with MATLAB analysis of the expected static deflections. Although a 3.7 µm misalignment is found between the mirror plate and the electrodes, in the direction perpendicular to the shallow trench of the electrodes, before the self-alignment process, the measured pull-in voltage has been found to be 103.4 V on average; this differs from the pull-in voltage of a perfectly aligned micromirror by only 0.67%. Regardless of the unpredictable misalignments in repetitive photolithography and bonding, the tilting angles corresponding to the driving voltages are proved to be uniform along the single axis as well as conform to the results of analytical analysis

  3. Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

    Science.gov (United States)

    Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

    2018-04-01

    An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

  4. Self-aligning and compressed autosophy video databases

    Science.gov (United States)

    Holtz, Klaus E.

    1993-04-01

    Autosophy, an emerging new science, explains `self-assembling structures,' such as crystals or living trees, in mathematical terms. This research provides a new mathematical theory of `learning' and a new `information theory' which permits the growing of self-assembling data network in a computer memory similar to the growing of `data crystals' or `data trees' without data processing or programming. Autosophy databases are educated very much like a human child to organize their own internal data storage. Input patterns, such as written questions or images, are converted to points in a mathematical omni dimensional hyperspace. The input patterns are then associated with output patterns, such as written answers or images. Omni dimensional information storage will result in enormous data compression because each pattern fragment is only stored once. Pattern recognition in the text or image files is greatly simplified by the peculiar omni dimensional storage method. Video databases will absorb input images from a TV camera and associate them with textual information. The `black box' operations are totally self-aligning where the input data will determine their own hyperspace storage locations. Self-aligning autosophy databases may lead to a new generation of brain-like devices.

  5. Pattern optimizing verification of self-align quadruple patterning

    Science.gov (United States)

    Yamato, Masatoshi; Yamada, Kazuki; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shouhei; Koike, Kyohei; Yaegashi, Hidetami

    2017-03-01

    Lithographic scaling continues to advance by extending the life of 193nm immersion technology, and spacer-type multi-patterning is undeniably the driving force behind this trend. Multi-patterning techniques such as self-aligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) have come to be used in memory devices, and they have also been adopted in logic devices to create constituent patterns in the formation of 1D layout designs. Multi-patterning has consequently become an indispensible technology in the fabrication of all advanced devices. In general, items that must be managed when using multi-patterning include critical dimension uniformity (CDU), line edge roughness (LER), and line width roughness (LWR). Recently, moreover, there has been increasing focus on judging and managing pattern resolution performance from a more detailed perspective and on making a right/wrong judgment from the perspective of edge placement error (EPE). To begin with, pattern resolution performance in spacer-type multi-patterning is affected by the process accuracy of the core (mandrel) pattern. Improving the controllability of CD and LER of the mandrel is most important, and to reduce LER, an appropriate smoothing technique should be carefully selected. In addition, the atomic layer deposition (ALD) technique is generally used to meet the need for high accuracy in forming the spacer film. Advances in scaling are accompanied by stricter requirements in the controllability of fine processing. In this paper, we first describe our efforts in improving controllability by selecting the most appropriate materials for the mandrel pattern and spacer film. Then, based on the materials selected, we present experimental results on a technique for improving etching selectivity.

  6. High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

    Directory of Open Access Journals (Sweden)

    Vamvoukakis K.

    2017-01-01

    Full Text Available The process technology for the fabrication of 4H-SiC trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET has been developed. The optimized TIVJFETs have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes only four lithography steps. A source-pillars sidewall oxidation and subsequent removal of the metallization from the top of the sidewall oxide ensured isolation between gate and source. Optimum planarization of the source pillars top has been performed by cyclotene spin coating and etch back. The effect of the channel geometry on the electrical characteristics has been studied by varying its length (0.3 and 1.2μm and its width (1.5-5μm. The voltage blocking exhibits a triode shape, which is typical for a static-induction transistor (SIT operation. The transistors exhibited high ON current handling capabilities (Direct Current density >1kA/cm2 and values of RON ranging from 6 - 12 mΩ•cm2 depending on the channel length. Maximum voltage blocking was 800V limited by the edge termination. The maximum voltage gain was 51. Most transistors were normally-on. Normally-off operation has been observed for transistors lower than 2μm channel width (mask level and deep implantation.

  7. Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

    KAUST Repository

    Wan, Weiwei; Lin, Liang; Xu, Yelong; Guo, Xu; Liu, Xiaoping; Ge, Haixiong; Lu, Minghui; Cui, Bo; Chen, Yanfeng

    2014-01-01

    manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage

  8. Uncertainty evaluation in the self-alignment test of the upper plate of a press

    International Nuclear Information System (INIS)

    Lourenço, Alexandre S; E Sousa, J Alves

    2015-01-01

    This paper describes a method to evaluate uncertainty of the self-alignment test of the upper plate of a press according to EN 12390-4:2000. The method, the algorithms and the sources of uncertainty are described

  9. Ink-jet printing technology enables self-aligned mould patterning for electroplating in a single step

    International Nuclear Information System (INIS)

    Meissner, M V; Spengler, N; Mager, D; Wang, N; Kiss, S Z; Höfflin, J; While, P T; Korvink, J G

    2015-01-01

    We present a new self-aligned, mask-free micro-fabrication method with which to form thick-layered conductive metal micro-structures inside electroplating moulds. Seed layer patterning for electroplating was performed by ink-jet printing using a silver nano-particle ink deposited on SU-8 or Ordyl SY permanent resist. The silver ink contact angle on SU-8 was adjusted by oxygen plasma followed by a hard bake. Besides functioning as a seed layer, the printed structures further served as a shadow mask during patterning of electroplating moulds into negative photoresist. The printed silver tracks remained in strong adhesion to the substrate when exposed to the acidic chemistry of the electroplating bath. To demonstrate the process, we manufactured rectangular, low-resistivity planar micro-coils for use in magnetic resonance microscopy. MRI images of a spring onion with an in-plane resolution down to 10 µm × 10 µm were acquired using a micro-coil on an 11.7 T MRI scanner. (paper)

  10. Capillary self-alignment of mesoscopic foil components for sensor-systems-in-foil

    International Nuclear Information System (INIS)

    Arutinov, Gari; Smits, Edsger C P; Van Heck, Gert; Van den Brand, Jeroen; Schoo, Herman F M; Mastrangeli, Massimo; Dietzel, Andreas

    2012-01-01

    This paper reports on the effective use of capillary self-alignment for low-cost and time-efficient assembly of heterogeneous foil components into a smart electronic identification label. Particularly, we demonstrate the accurate (better than 50 µm) alignment of cm-sized functional foil dies. We investigated the role played by the assembly liquid, by the size and the weight of assembling dies and by their initial offsets in the self-alignment performance. It was shown that there is a definite range of initial offsets allowing dies to align with high accuracy and within approximately the same time window, irrespective of their initial offset. (paper)

  11. EUV mask manufacturing readiness in the merchant mask industry

    Science.gov (United States)

    Green, Michael; Choi, Yohan; Ham, Young; Kamberian, Henry; Progler, Chris; Tseng, Shih-En; Chiou, Tsann-Bim; Miyazaki, Junji; Lammers, Ad; Chen, Alek

    2017-10-01

    As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process "stress testing" to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for

  12. High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.

    Science.gov (United States)

    Zhang, Qing; Shao, Shuangshuang; Chen, Zheng; Pecunia, Vincenzo; Xia, Kai; Zhao, Jianwen; Cui, Zheng

    2018-05-09

    A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane. Photolithographic exposure from backside using bottom-gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 μm width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 10 8 , maximum mobility of 3.3 cm 2 V -1 s -1 , negligible hysteresis, and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high-resolution printing displays.

  13. A Kalman Filter for SINS Self-Alignment Based on Vector Observation.

    Science.gov (United States)

    Xu, Xiang; Xu, Xiaosu; Zhang, Tao; Li, Yao; Tong, Jinwu

    2017-01-29

    In this paper, a self-alignment method for strapdown inertial navigation systems based on the q -method is studied. In addition, an improved method based on integrating gravitational apparent motion to form apparent velocity is designed, which can reduce the random noises of the observation vectors. For further analysis, a novel self-alignment method using a Kalman filter based on adaptive filter technology is proposed, which transforms the self-alignment procedure into an attitude estimation using the observation vectors. In the proposed method, a linear psuedo-measurement equation is adopted by employing the transfer method between the quaternion and the observation vectors. Analysis and simulation indicate that the accuracy of the self-alignment is improved. Meanwhile, to improve the convergence rate of the proposed method, a new method based on parameter recognition and a reconstruction algorithm for apparent gravitation is devised, which can reduce the influence of the random noises of the observation vectors. Simulations and turntable tests are carried out, and the results indicate that the proposed method can acquire sound alignment results with lower standard variances, and can obtain higher alignment accuracy and a faster convergence rate.

  14. Laser micro-machining of hydrophobic-hydrophilic patterns for fluid driven self-alignment in micro-assembly

    NARCIS (Netherlands)

    Römer, Gerardus Richardus, Bernardus, Engelina; Jorritsma, Mark; Arnaldo del Cerro, D.; Chang, Bo; Liimatainen, Ville; Zhou, Quan; Huis in 't Veld, Bert

    2011-01-01

    Fluid driven self-alignment is a low cost alternative to fast but relatively inaccurate robotic pickand-place assembly of micro-fabricated components. This fluidic self-alignment technique relies on a hydrophobic-hydrophilic pattern on the surface of the receiving substrate, which confines a fluid

  15. Self-aligned blocking integration demonstration for critical sub-30nm pitch Mx level patterning with EUV self-aligned double patterning

    Science.gov (United States)

    Raley, Angélique; Lee, Joe; Smith, Jeffrey T.; Sun, Xinghua; Farrell, Richard A.; Shearer, Jeffrey; Xu, Yongan; Ko, Akiteru; Metz, Andrew W.; Biolsi, Peter; Devilliers, Anton; Arnold, John; Felix, Nelson

    2018-04-01

    We report a sub-30nm pitch self-aligned double patterning (SADP) integration scheme with EUV lithography coupled with self-aligned block technology (SAB) targeting the back end of line (BEOL) metal line patterning applications for logic nodes beyond 5nm. The integration demonstration is a validation of the scalability of a previously reported flow, which used 193nm immersion SADP targeting a 40nm pitch with the same material sets (Si3N4 mandrel, SiO2 spacer, Spin on carbon, spin on glass). The multi-color integration approach is successfully demonstrated and provides a valuable method to address overlay concerns and more generally edge placement error (EPE) as a whole for advanced process nodes. Unbiased LER/LWR analysis comparison between EUV SADP and 193nm immersion SADP shows that both integrations follow the same trend throughout the process steps. While EUV SADP shows increased LER after mandrel pull, metal hardmask open and dielectric etch compared to 193nm immersion SADP, the final process performance is matched in terms of LWR (1.08nm 3 sigma unbiased) and is only 6% higher than 193nm immersion SADP for average unbiased LER. Using EUV SADP enables almost doubling the line density while keeping most of the remaining processes and films unchanged, and provides a compelling alternative to other multipatterning integrations, which present their own sets of challenges.

  16. Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

    KAUST Repository

    Wan, Weiwei

    2014-03-01

    Nanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials. © 2014 Springer-Verlag Berlin Heidelberg.

  17. Self-aligned inkjet printing of highly conducting gold electrodes with submicron resolution

    Science.gov (United States)

    Zhao, Ni; Chiesa, Marco; Sirringhaus, Henning; Li, Yuning; Wu, Yiliang; Ong, Beng

    2007-03-01

    Self-aligned printing is a recently developed bottom-up printing technique which utilizes the unique droplet motion on heterogeneous surfaces to define sub-100-nm critical features and surpasses the resolution which can commonly be achieved by direct printing by two orders of magnitude. Here we extend this method, which was originally implemented with conductive polymer inks, to fabrication of functional conductive nanostructures with gold nanoparticle ink. We also designed a configuration where the ink was printed between two lithographically defined patterns to facilitate the study of the channel formation. Channel lengths from 4μm down to 60nm were achieved by controlling the surface tension and drying time of the ink. A fluid dynamical model is presented to explain the mechanism by which the channel forms in the self-aligned printing technique. Field-effect transistors fabricated using gold self-aligned printed source-drain electrodes exhibit significantly improved output currents than those using conducting polymers. Unambiguous evidence for the submicrometer channel dimension is obtained by imaging the potential drop along the channel using scanning Kelvin probe microscopy.

  18. Scalable fabrication of self-aligned graphene transistors and circuits on glass.

    Science.gov (United States)

    Liao, Lei; Bai, Jingwei; Cheng, Rui; Zhou, Hailong; Liu, Lixin; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

    2012-06-13

    Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

  19. Self-aligned BCB planarization method for high-frequency signal injection in a VCSEL with an integrated modulator

    Science.gov (United States)

    Marigo-Lombart, Ludovic; Doucet, Jean-Baptiste; Lecestre, Aurélie; Reig, Benjamin; Rousset, Bernard; Thienpont, Hugo; Panajotov, Krassimir; Almuneau, Guilhem

    2016-04-01

    The huge increase of datacom capacities requires lasers sources with more and more bandwidth performances. Vertical-Cavity Surface-Emitting Lasers (VCSEL) in direct modulation is a good candidate, already widely used for short communication links such as in datacenters. Recently several different approaches have been proposed to further extend the direct modulation bandwidth of these devices, by improving the VCSEL structure, or by combining the VCSEL with another high speed element such as lateral slow light modulator or transistor/laser based structure (TVCSEL). We propose to increase the modulation bandwidth by vertically integrating a continuous-wave VCSEL with a high-speed electro-modulator. This vertical structure implies multiple electrodes with sufficiently good electrical separation between the different input electrical signals. This high frequency modulation requires both good electrical insulation between metal electrodes and an optimized design of the coplanar lines. BenzoCyclobutene (BCB) thanks to its low dielectric constant, low losses, low moisture absorption and good thermal stability, is often used as insulating layer. Also, BCB planarization offers the advantages of simpler and more reliable technological process flow in such integrated VCSEL/modulator structures with important reliefs. As described by Burdeaux et al. a degree of planarization (DOP) of about 95% can be achieved by simple spin coating whatever the device thickness. In most of the cases, the BCB planarization process requires an additional photolithography step in order to open an access to the mesa surface, thus involving a tight mask alignment and resulting in a degraded planarization. In this paper, we propose a self-aligned process with improved BCB planarization by combining a hot isostatic pressing derived from nanoimprint techniques with a dry plasma etching step.

  20. Self-alignment of RFID dies on four-pad patterns with water droplet for sparse self-assembly

    International Nuclear Information System (INIS)

    Chang, Bo; Routa, Iiris; Sariola, Veikko; Zhou, Quan

    2011-01-01

    This paper reports an in-depth study of a water-droplet-assisted self-alignment technique that self-aligns radio frequency identification (RFID) dies on four-pad patterns. The segmented structure of four hydrophilic pads on a hydrophobic substrate brings freedom to the design of the electrical functionality and the surface functionality. The paper investigates the influence of the key parameters that may affect the self-alignment in theory and experiment. The theoretical model justifies that RFID dies can be reliably aligned on the segmented four-pad pattern even when the initial placement error is as large as 50% of the size of the die and the gap between the four pads is about 10% of the size of the die. A method has been introduced to estimate the sufficient droplet volume for self-alignment. A series of experiments have been carried out to verify the results of the model. The experiments indicate that the self-alignment between the 730 × 730 µm RFID dies and the pattern occurs reliably when the releasing bias between the RFID die and antenna is less than 400 µm for patterns with 50 and 100 µm gaps, and successful self-alignment is possible even with greater bias of 500 µm

  1. Magnetic behaviour of arrays of Ni nanowires by electrodeposition into self-aligned titania nanotubes

    International Nuclear Information System (INIS)

    Prida, V.M.; Hernandez-Velez, M.; Cervera, M.; Pirota, K.; Sanz, R.; Navas, D.; Asenjo, A.; Aranda, P.; Ruiz-Hitzky, E.; Batallan, F.; Vazquez, M.; Hernando, B.; Menendez, A.; Bordel, N.; Pereiro, R.

    2005-01-01

    Arrays of Ni nanowires electrodeposited into self-aligned and randomly disordered titania nanotube arrays grown by anodization process are investigated by X-ray diffraction, SEM, rf-GDOES and VSM magnetometry. The titania nanotube outer diameter is about 160 nm, wall thickness ranging from 60 to 70 nm and 300 nm in depth. The so-obtained Ni nanowires reach above 100 nm diameter and 240 nm length, giving rise to coercive fields of 98 and 200 Oe in the perpendicular or parallel to the nanowires axis hysteresis loops, respectively. The formation of magnetic vortex domain states is also discussed

  2. In-Flight Self-Alignment Method Aided by Geomagnetism for Moving Basement of Guided Munitions

    Directory of Open Access Journals (Sweden)

    Shuang-biao Zhang

    2015-01-01

    Full Text Available Due to power-after-launch mode of guided munitions of high rolling speed, initial attitude of munitions cannot be determined accurately, and this makes it difficult for navigation and control system to work effectively and validly. An in-flight self-alignment method aided by geomagnetism that includes a fast in-flight coarse alignment method and an in-flight alignment model based on Kalman theory is proposed in this paper. Firstly a fast in-flight coarse alignment method is developed by using gyros, magnetic sensors, and trajectory angles. Then, an in-flight alignment model is derived by investigation of the measurement errors and attitude errors, which regards attitude errors as state variables and geomagnetic components in navigation frame as observed variables. Finally, fight data of a spinning projectile is used to verify the performance of the in-flight self-alignment method. The satisfying results show that (1 the precision of coarse alignment can attain below 5°; (2 the attitude errors by in-flight alignment model converge to 24′ at early of the latter half of the flight; (3 the in-flight alignment model based on Kalman theory has better adaptability, and show satisfying performance.

  3. Self-Aligned Metal Electrodes in Fully Roll-to-Roll Processed Organic Transistors

    Directory of Open Access Journals (Sweden)

    Marja Vilkman

    2016-01-01

    Full Text Available We demonstrate the production of organic bottom gate transistors with self-aligned electrodes, using only continuous roll-to-roll (R2R techniques. The self-alignment allows accurate <5 µm layer-to-layer registration, which is usually a challenge in high-speed R2R environments as the standard registration methods are limited to the millimeter range—or, at best, to tens of µm if online cameras and automatic web control are utilized. The improved registration enables minimizing the overlap between the source/drain electrodes and the gate electrode, which is essential for minimizing the parasitic capacitance. The complete process is a combination of several techniques, including evaporation, reverse gravure, flexography, lift-off, UV exposure and development methods—all transferred to a continuous R2R pilot line. Altogether, approximately 80 meters of devices consisting of thousands of transistors were manufactured in a roll-to-roll fashion. Finally, a cost analysis is presented in order to ascertain the main costs and to predict whether the process would be feasible for the industrial production of organic transistors.

  4. High-frequency self-aligned graphene transistors with transferred gate stacks

    Science.gov (United States)

    Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

  5. Clay Mask Workshop

    Science.gov (United States)

    Gamble, David L.

    2012-01-01

    Masks can represent so many things, such as emotions (happy, sad, fearful) and power. The familiar "comedy and tragedy" masks, derived from ancient Greek theater, are just one example from mask history. Death masks from the ancient Egyptians influenced the ancient Romans into creating similar masks for their departed. Masks can represent many…

  6. Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

    International Nuclear Information System (INIS)

    Chen, G-L; Kuo, David M T; Lai, W-T; Li, P-W

    2007-01-01

    We have fabricated a Ge quantum dot (QD) (∼10 nm) single-hole transistor with self-aligned electrodes using thermal oxidation of a SiGe-on-insulator nanowire based on FinFET technology. This fabricated device exhibits clear Coulomb blockade oscillations with large peak-to-valley ratio (PVCR) of 250-750 and negative differential conductance with PVCR of ∼12 at room temperature. This reveals that the gate-induced tunneling barrier lowering is effectively suppressed due to the self-aligned electrode structure. The magnitude of tunneling current spectra also reveals the coupling strengths between the energy levels of the Ge QD and electrodes

  7. Field emission from carbon nanotube bundle arrays grown on self-aligned ZnO nanorods

    International Nuclear Information System (INIS)

    Li Chun; Fang Guojia; Yuan Longyan; Liu Nishuang; Ai Lei; Xiang Qi; Zhao Dongshan; Pan Chunxu; Zhao Xingzhong

    2007-01-01

    The field emission (FE) properties of carbon nanotube (CNT) bundle arrays grown on vertically self-aligned ZnO nanorods (ZNRs) are reported. The ZNRs were first synthesized on ZnO-seed-coated Si substrate by the vapour phase transport method, and then the radically grown CNTs were grown directly on the surface of the ZNRs from ethanol flames. The CNT/ZNR composite showed a turn-on field of 1.5 V μm -1 (at 0.1 μA cm -2 ), a threshold field of 4.5 V μm -1 (at 1 mA cm -2 ) and a stable emission current with fluctuations of 5%, demonstrating significantly enhanced FE of ZNRs due to the low work function and high aspect ratio of the CNTs, and large surface-to-volume ratio of the underlying ZNRs

  8. Bright single photon source based on self-aligned quantum dot–cavity systems

    DEFF Research Database (Denmark)

    Maier, Sebastian; Gold, Peter; Forchel, Alfred

    2014-01-01

    We report on a quasi-planar quantum-dot-based single-photon source that shows an unprecedented high extraction efficiency of 42% without complex photonic resonator geometries or post-growth nanofabrication. This very high efficiency originates from the coupling of the photons emitted by a quantum...... dot to a Gaussian shaped nanohill defect that naturally arises during epitaxial growth in a self-aligned manner. We investigate the morphology of these defects and characterize the photonic operation mechanism. Our results show that these naturally arising coupled quantum dot-defects provide a new...... avenue for efficient (up to 42% demonstrated) and pure (g2(0) value of 0.023) single-photon emission....

  9. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    International Nuclear Information System (INIS)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

    2014-01-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

  10. A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

    Science.gov (United States)

    Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

    The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

  11. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen; Tuteja, Mohit; Kesaria, Manoj; Waghmare, U. V.; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064 (India)

    2012-09-24

    We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si{sub 3}N{sub 4} intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

  12. Smoke Mask

    Science.gov (United States)

    2003-01-01

    Smoke inhalation injury from the noxious products of fire combustion accounts for as much as 80 percent of fire-related deaths in the United States. Many of these deaths are preventable. Smoke Mask, Inc. (SMI), of Myrtle Beach, South Carolina, is working to decrease these casualties with its line of life safety devices. The SMI personal escape hood and the Guardian Filtration System provide respiratory protection that enables people to escape from hazardous and unsafe conditions. The breathing filter technology utilized in the products is specifically designed to supply breathable air for 20 minutes. In emergencies, 20 minutes can mean the difference between life and death.

  13. venice: Mask utility

    Science.gov (United States)

    Coupon, Jean

    2018-02-01

    venice reads a mask file (DS9 or fits type) and a catalogue of objects (ascii or fits type) to create a pixelized mask, find objects inside/outside a mask, or generate a random catalogue of objects inside/outside a mask. The program reads the mask file and checks if a point, giving its coordinates, is inside or outside the mask, i.e. inside or outside at least one polygon of the mask.

  14. P-6 : Impact of buffer layers on the self-aligned top-gate a-IGZO TFT characteristics

    NARCIS (Netherlands)

    Nag, M.; en de rest

    2015-01-01

    In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT

  15. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

    NARCIS (Netherlands)

    Nag, M.; Muller, R.N.; Steudel, S.; Smout, S.; Bhoolokam, A.; Myny, K.; Schols, S.; Genoe, J.; Cobb, B.; Kumar, Abhishek; Gelinck, G.H.; Fukui, Y.; Groeseneken, G.; Heremans, P.

    2015-01-01

    We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at

  16. Capillary self-alignment dynamics for R2R manufacturing of mesoscopic system-in-foil devices

    NARCIS (Netherlands)

    Arutinov, G.; Quintero, A.V.; Smits, E.C.P.; Remoortere, B. van; Brand, J. van den; Schoo, H.F.M.; Briand, D.; Rooij, N.F. de; Dietzel, A.H.

    2012-01-01

    This paper reports a study on the dynamics of foil-based functional component self-alignment onto patterned test substrates and its demonstration when integrating a flexible sensor onto a printed circuitry. We investigate the dependence of alignment time and final precision of stacking of mm- and

  17. Mechanical Design, Simulation, and Testing of Self-Aligning Gaussian Telescope and Stand for ITER LFS Reflectometer Diagnostic

    Science.gov (United States)

    Broughton, Rachel; Gomez, Michael; Zolfaghari, Ali; Morris, Lewis

    2016-10-01

    A self-aligning Gaussian telescope has been designed to compensate for the effect of movement in the ITER vacuum vessel on the transmission line. The purpose of the setup is to couple microwaves into and out of the vessel across the vacuum windows while allowing for both slow movements of the vessel, due to thermal growth, and rapid movements, due to vibrations and disruptions. Additionally, a test stand has been designed specifically to hold this telescope in order to imitate these movements. Consequently, this will allow for the assessment of the efficacy in applying the self-aligning Gaussian telescope approach. The motions of the test stand, as well as the stress on the telescope mechanism, have been virtually simulated using ANSYS workbench. A prototype of this test stand and self-aligning telescope will be built using a combination of custom machined parts and ordered parts. The completed mechanism will be tested at the lab in four different ways: slow single- and multi-direction movements, rapid multi-direction movement, functional laser alignment and self-aligning tests, and natural frequency tests. Once the prototype successfully passes all requirements, it will be tested with microwaves in the LFSR transmission line test stand at General Atomics. This work is supported by US DOE Contract No. DE-AC02-09CH11466.

  18. UV-LIGA technique for ECF micropumps using back UV exposure and self-alignment

    Science.gov (United States)

    Han, D.; Xia, Y.; Yokota, S.; Kim, J. W.

    2017-12-01

    This paper proposes and develops a novel UV-LIGA technique using back UV exposure and self-alignment to realize high aspect ratio micromachining (HARM) in high power density electro-conjugate fluid (ECF) micropumps. ECF is a functional fluid designed to be able to generate strong and active jet flow (ECF jetting) between anode and cathode in ECF when high DC voltage is applied. We have developed high power density ECF micropumps consisting of triangular prism and slit electrode pairs (TPSEs) fabricated by HARM. The traditional UV-LIGA technique for HARM is mainly divided into two approaches: (a) single thick layer and (b) multiple thin layers. Both methods have limitations—deformed molds in the former and misalignment between layers in the latter. Using the finite element method software COMSOL Multiphysics, we demonstrate that the deformed micro-molds critically impair the performance of ECF micropumps. In addition, we experimentally prove that the misalignment would easily trigger electric discharge in the ECF micropumps. To overcome these limitations, we conceive a new concept utilizing the seed electrode layer for electroforming as the UV shield and pattern photoresist (KMPR) by back UV exposure. The seed electrode layer should be composed of a non-transparent conductor (Au/Ti) for patterning and a transparent conductor (ITO) for wiring. Instead of ITO, we propose the concept of transparency-like electrodes comprised of thin metal line patterns. To verify this concept, KMPR layers with thicknesses of 70, 220, and 500 µm are experimentally investigated. In the case of 500 µm KMPR thickness, the concept of transparency-like electrode was partially proved. As a result, TPSEs with a height of 440 µm were successfully fabricated. Characteristic experiments demonstrated that ECF micropumps (367 mW cm-3) fabricated by back UV achieved almost the same output power density as ECF micropumps (391 mW cm-3) fabricated by front UV. This paper proves that the proposed

  19. UV-LIGA technique for ECF micropumps using back UV exposure and self-alignment

    International Nuclear Information System (INIS)

    Han, D; Xia, Y; Yokota, S; Kim, J W

    2017-01-01

    This paper proposes and develops a novel UV-LIGA technique using back UV exposure and self-alignment to realize high aspect ratio micromachining (HARM) in high power density electro-conjugate fluid (ECF) micropumps. ECF is a functional fluid designed to be able to generate strong and active jet flow (ECF jetting) between anode and cathode in ECF when high DC voltage is applied. We have developed high power density ECF micropumps consisting of triangular prism and slit electrode pairs (TPSEs) fabricated by HARM. The traditional UV-LIGA technique for HARM is mainly divided into two approaches: (a) single thick layer and (b) multiple thin layers. Both methods have limitations—deformed molds in the former and misalignment between layers in the latter. Using the finite element method software COMSOL Multiphysics, we demonstrate that the deformed micro-molds critically impair the performance of ECF micropumps. In addition, we experimentally prove that the misalignment would easily trigger electric discharge in the ECF micropumps. To overcome these limitations, we conceive a new concept utilizing the seed electrode layer for electroforming as the UV shield and pattern photoresist (KMPR) by back UV exposure. The seed electrode layer should be composed of a non-transparent conductor (Au/Ti) for patterning and a transparent conductor (ITO) for wiring. Instead of ITO, we propose the concept of transparency-like electrodes comprised of thin metal line patterns. To verify this concept, KMPR layers with thicknesses of 70, 220, and 500 µ m are experimentally investigated. In the case of 500 µ m KMPR thickness, the concept of transparency-like electrode was partially proved. As a result, TPSEs with a height of 440 µ m were successfully fabricated. Characteristic experiments demonstrated that ECF micropumps (367 mW cm −3 ) fabricated by back UV achieved almost the same output power density as ECF micropumps (391 mW cm −3 ) fabricated by front UV. This paper proves that the

  20. Rapid mask prototyping for microfluidics.

    Science.gov (United States)

    Maisonneuve, B G C; Honegger, T; Cordeiro, J; Lecarme, O; Thiry, T; Fuard, D; Berton, K; Picard, E; Zelsmann, M; Peyrade, D

    2016-03-01

    With the rise of microfluidics for the past decade, there has come an ever more pressing need for a low-cost and rapid prototyping technology, especially for research and education purposes. In this article, we report a rapid prototyping process of chromed masks for various microfluidic applications. The process takes place out of a clean room, uses a commercially available video-projector, and can be completed in less than half an hour. We quantify the ranges of fields of view and of resolutions accessible through this video-projection system and report the fabrication of critical microfluidic components (junctions, straight channels, and curved channels). To exemplify the process, three common devices are produced using this method: a droplet generation device, a gradient generation device, and a neuro-engineering oriented device. The neuro-engineering oriented device is a compartmentalized microfluidic chip, and therefore, required the production and the precise alignment of two different masks.

  1. Design of a self-aligned, wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with 10 nm magnetic force microscope resolution

    Energy Technology Data Exchange (ETDEWEB)

    Karcı, Özgür [NanoMagnetics Instruments Ltd., Hacettepe - İvedik OSB Teknokent, 1368. Cad., No: 61/33, 06370, Yenimahalle, Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Dede, Münir [NanoMagnetics Instruments Ltd., Hacettepe - İvedik OSB Teknokent, 1368. Cad., No: 61/33, 06370, Yenimahalle, Ankara (Turkey); Oral, Ahmet, E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey)

    2014-10-01

    We describe the design of a wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with a self-aligned fibre-cantilever mechanism. An alignment chip with alignment groves and a special mechanical design are used to eliminate tedious and time consuming fibre-cantilever alignment procedure for the entire temperature range. A low noise, Michelson fibre interferometer was integrated into the system for measuring deflection of the cantilever. The spectral noise density of the system was measured to be ~12 fm/√Hz at 4.2 K at 3 mW incident optical power. Abrikosov vortices in BSCCO(2212) single crystal sample and a high density hard disk sample were imaged at 10 nm resolution to demonstrate the performance of the system.

  2. Design of a self-aligned, wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with 10 nm magnetic force microscope resolution

    International Nuclear Information System (INIS)

    Karcı, Özgür; Dede, Münir; Oral, Ahmet

    2014-01-01

    We describe the design of a wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with a self-aligned fibre-cantilever mechanism. An alignment chip with alignment groves and a special mechanical design are used to eliminate tedious and time consuming fibre-cantilever alignment procedure for the entire temperature range. A low noise, Michelson fibre interferometer was integrated into the system for measuring deflection of the cantilever. The spectral noise density of the system was measured to be ∼12 fm/√Hz at 4.2 K at 3 mW incident optical power. Abrikosov vortices in BSCCO(2212) single crystal sample and a high density hard disk sample were imaged at 10 nm resolution to demonstrate the performance of the system

  3. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

    Science.gov (United States)

    Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

    2016-05-01

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  4. Method of making a self-aligned schottky metal semi-conductor field effect transistor with buried source and drain

    International Nuclear Information System (INIS)

    Bol, I.

    1984-01-01

    A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed

  5. Intradomain phase transitions in flexible block copolymers with self-aligning segments

    Science.gov (United States)

    Burke, Christopher J.; Grason, Gregory M.

    2018-05-01

    We study a model of flexible block copolymers (BCPs) in which there is an enlthalpic preference for orientational order, or local alignment, among like-block segments. We describe a generalization of the self-consistent field theory of flexible BCPs to include inter-segment orientational interactions via a Landau-de Gennes free energy associated with a polar or nematic order parameter for segments of one component of a diblock copolymer. We study the equilibrium states of this model numerically, using a pseudo-spectral approach to solve for chain conformation statistics in the presence of a self-consistent torque generated by inter-segment alignment forces. Applying this theory to the structure of lamellar domains composed of symmetric diblocks possessing a single block of "self-aligning" polar segments, we show the emergence of spatially complex segment order parameters (segment director fields) within a given lamellar domain. Because BCP phase separation gives rise to spatially inhomogeneous orientation order of segments even in the absence of explicit intra-segment aligning forces, the director fields of BCPs, as well as thermodynamics of lamellar domain formation, exhibit a highly non-linear dependence on both the inter-block segregation (χN) and the enthalpy of alignment (ɛ). Specifically, we predict the stability of new phases of lamellar order in which distinct regions of alignment coexist within the single mesodomain and spontaneously break the symmetries of the lamella (or smectic) pattern of composition in the melt via in-plane tilt of the director in the centers of the like-composition domains. We further show that, in analogy to Freedericksz transition confined nematics, the elastic costs to reorient segments within the domain, as described by the Frank elasticity of the director, increase the threshold value ɛ needed to induce this intra-domain phase transition.

  6. Line roughness improvements on self-aligned quadruple patterning by wafer stress engineering

    Science.gov (United States)

    Liu, Eric; Ko, Akiteru; Biolsi, Peter; Chae, Soo Doo; Hsieh, Chia-Yun; Kagaya, Munehito; Lee, Choongman; Moriya, Tsuyoshi; Tsujikawa, Shimpei; Suzuki, Yusuke; Okubo, Kazuya; Imai, Kiyotaka

    2018-04-01

    In integrated circuit and memory devices, size shrinkage has been the most effective method to reduce production cost and enable the steady increment of the number of transistors per unit area over the past few decades. In order to reduce the die size and feature size, it is necessary to minimize pattern formation in the advance node development. In the node of sub-10nm, extreme ultra violet lithography (EUV) and multi-patterning solutions based on 193nm immersionlithography are the two most common options to achieve the size requirement. In such small features of line and space pattern, line width roughness (LWR) and line edge roughness (LER) contribute significant amount of process variation that impacts both physical and electrical performances. In this paper, we focus on optimizing the line roughness performance by using wafer stress engineering on 30nm pitch line and space pattern. This pattern is generated by a self-aligned quadruple patterning (SAQP) technique for the potential application of fin formation. Our investigation starts by comparing film materials and stress levels in various processing steps and material selection on SAQP integration scheme. From the cross-matrix comparison, we are able to determine the best stack of film selection and stress combination in order to achieve the lowest line roughness performance while obtaining pattern validity after fin etch. This stack is also used to study the step-by-step line roughness performance from SAQP to fin etch. Finally, we will show a successful patterning of 30nm pitch line and space pattern SAQP scheme with 1nm line roughness performance.

  7. Thin concentrator photovoltaic module with micro-solar cells which are mounted by self-align method using surface tension of melted solder

    Science.gov (United States)

    Hayashi, Nobuhiko; Terauchi, Masaharu; Aya, Youichirou; Kanayama, Shutetsu; Nishitani, Hikaru; Nakagawa, Tohru; Takase, Michihiko

    2017-09-01

    We are developing a thin and lightweight CPV module using small size lens system made from poly methyl methacrylate (PMMA) with a short focal length and micro-solar cells to decrease the transporting and the installing costs of CPV systems. In order to achieve high conversion efficiency in CPV modules using micro-solar cells, the micro-solar cells need to be mounted accurately to the irradiated region of the concentrated sunlight. In this study, we have successfully developed self-align method thanks to the surface tension of the melted solder even utilizing commercially available surface-mounting technology (SMT). Solar cells were self-aligned to the specified positions of the circuit board by this self-align method with accuracy within ±10 µm. We actually fabricated CPV modules using this self-align method and demonstrated high conversion efficiency of our CPV module.

  8. Visual masking & schizophrenia

    Directory of Open Access Journals (Sweden)

    Michael H. Herzog

    2015-06-01

    Full Text Available Visual masking is a frequently used tool in schizophrenia research. Visual masking has a very high sensitivity and specificity and masking paradigms have been proven to be endophenotypes. Whereas masking is a powerful technique to study schizophrenia, the underlying mechanisms are discussed controversially. For example, for more than 25 years, masking deficits of schizophrenia patients were mainly attributed to a deficient magno-cellular system (M-system. Here, we show that there is very little evidence that masking deficits are magno-cellular deficits. We will discuss the magno-cellular and other approaches in detail and highlight their pros and cons.

  9. Binaural masking level differences in nonsimultanuous masking

    NARCIS (Netherlands)

    Kohlrausch, A.G.; Fassel, R.; Gilkey, R.H.; Anderson, T.R.

    1997-01-01

    This chapter investigates the extent to which binaural unmasking occurs with nonsimultaneous presentation of masker and signal, particularly in forward masking. The majority of previous studies that addressed this question found that there is a substantial binaural masking level difference (BMLD) in

  10. Overlay improvement by exposure map based mask registration optimization

    Science.gov (United States)

    Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

    2015-03-01

    Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density

  11. Masks in Pedagogical Practice

    Science.gov (United States)

    Roy, David

    2016-01-01

    In Drama Education mask work is undertaken and presented as both a methodology and knowledge base. There are numerous workshops and journal articles available for teachers that offer knowledge or implementation of mask work. However, empirical examination of the context or potential implementation of masks as a pedagogical tool remains…

  12. Keeping African Masks Real

    Science.gov (United States)

    Waddington, Susan

    2012-01-01

    Art is a good place to learn about our multicultural planet, and African masks are prized throughout the world as powerfully expressive artistic images. Unfortunately, multicultural education, especially for young children, can perpetuate stereotypes. Masks taken out of context lose their meaning and the term "African masks" suggests that there is…

  13. Fabrication and characterization of a solid-state nanopore with self-aligned carbon nanoelectrodes for molecular detection

    International Nuclear Information System (INIS)

    Spinney, Patrick S; Collins, Scott D; Smith, Rosemary L; Howitt, David G

    2012-01-01

    Stochastic molecular sensors based on resistive pulse nanopore modalities are envisioned as facile DNA sequencers. However, recent advances in nanotechnology fabrication have highlighted promising alternative detection mechanisms with higher sensitivity and potential single-base resolution. In this paper we present the novel self-aligned fabrication of a solid-state nanopore device with integrated transverse graphene-like carbon nanoelectrodes for polyelectrolyte molecular detection. The electrochemical transduction mechanism is characterized and found to result primarily from thermionic emission between the two transverse electrodes. Response of the nanopore to Lambda dsDNA and short (16-mer) ssDNA is demonstrated and distinguished. (paper)

  14. AutoMOPS--B2B and B2C in mask making: mask manufacturing performance and customer satisfaction improvement through better information flow management

    Science.gov (United States)

    de Ridder, Luc; Filies, Olaf; Rodriguez, Ben; Kuijken, Aart

    2001-04-01

    Through application of modern supply chain concepts in combination with state-of-the-art information technology, mask manufacturing performance and customer satisfaction can be improved radically. The AutoMOPS solution emphasizes on the elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and prototype production stages.

  15. 2013 mask industry survey

    Science.gov (United States)

    Malloy, Matt

    2013-09-01

    A comprehensive survey was sent to merchant and captive mask shops to gather information about the mask industry as an objective assessment of its overall condition. 2013 marks the 12th consecutive year for this process. Historical topics including general mask profile, mask processing, data and write time, yield and yield loss, delivery times, maintenance, and returns were included and new topics were added. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. While each year's survey includes minor updates based on feedback from past years and the need to collect additional data on key topics, the bulk of the survey and reporting structure have remained relatively constant. A series of improvements is being phased in beginning in 2013 to add value to a wider audience, while at the same time retaining the historical content required for trend analyses of the traditional metrics. Additions in 2013 include topics such as top challenges, future concerns, and additional details in key aspects of mask masking, such as the number of masks per mask set per ground rule, minimum mask resolution shipped, and yield by ground rule. These expansions beyond the historical topics are aimed at identifying common issues, gaps, and needs. They will also provide a better understanding of real-life mask requirements and capabilities for comparison to the International Technology Roadmap for Semiconductors (ITRS).

  16. A Comparative Study of the Monitoring of a Self Aligning Spherical Journal using Surface Vibration, Airborne Sound and Acoustic Emission

    International Nuclear Information System (INIS)

    Raharjo, P; Tesfa, B; Gu, F; Ball, A D

    2012-01-01

    A Self aligning spherical journal bearing is a plain bearing which has spherical surface contact that can be applied in high power industrial machinery. This type of bearing can accommodate a misalignment problem. The journal bearing faults degrade machine performance, decrease life time service and cause unexpected failure which are dangerous for safety issues. Non-intrusive measurements such as surface vibration (SV), airborne sound (AS) and acoustic emission (AE) measurement are appropriate monitoring methods for early stage journal bearing fault in low, medium and high frequency. This paper focuses on the performance comparison using SV, AS and AE measurements in monitoring a self aligning spherical journal bearing for normal and faulty (scratch) conditions. It examines the signals in the time domain and frequency domain and identifies the frequency ranges for each measurement in which significant changes are observed. The results of SV, AS and AE experiments indicate that the spectrum can be used to detect the differences between normal and faulty bearing. The statistic parameter shows that RMS value and peak value for faulty bearing is higher than normal bearing.

  17. Track-etched nanopores in spin-coated polycarbonate films applied as sputtering mask

    International Nuclear Information System (INIS)

    Nix, A.-K.; Gehrke, H.-G.; Krauser, J.; Trautmann, C.; Weidinger, A.; Hofsaess, H.

    2009-01-01

    Thin polycarbonate films were spin-coated on silicon substrates and subsequently irradiated with 1-GeV U ions. The ion tracks in the polymer layer were chemically etched yielding nanopores of about 40 nm diameter. In a second process, the nanoporous polymer film acted as mask for structuring the Si substrate underneath. Sputtering with 5-keV Xe ions produced surface craters of depth ∼150 nm and diameter ∼80 nm. This arrangement can be used for the fabrication of track-based nanostructures with self-aligned apertures.

  18. Mitigating mask roughness via pupil filtering

    Science.gov (United States)

    Baylav, B.; Maloney, C.; Levinson, Z.; Bekaert, J.; Vaglio Pret, A.; Smith, B.

    2014-03-01

    The roughness present on the sidewalls of lithographically defined patterns imposes a very important challenge for advanced technology nodes. It can originate from the aerial image or the photoresist chemistry/processing [1]. The latter remains to be the dominant group in ArF and KrF lithography; however, the roughness originating from the mask transferred to the aerial image is gaining more attention [2-9], especially for the imaging conditions with large mask error enhancement factor (MEEF) values. The mask roughness contribution is usually in the low frequency range, which is particularly detrimental to the device performance by causing variations in electrical device parameters on the same chip [10-12]. This paper explains characteristic differences between pupil plane filtering in amplitude and in phase for the purpose of mitigating mask roughness transfer under interference-like lithography imaging conditions, where onedirectional periodic features are to be printed by partially coherent sources. A white noise edge roughness was used to perturbate the mask features for validating the mitigation.

  19. Traditional Chinese Masks Reveal Customs

    Institute of Scientific and Technical Information of China (English)

    1996-01-01

    CHINESE masks are undoubtedly an important component in the worldwide mask culture. Minority nationality masks are a major component of China’s mask culture. Traditional Chinese masks, or nuo, represent a cultural component which originated from religious rites in prehistoric times. Various types of nuo are highly valuable for studies of Chinese customs.

  20. Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process

    International Nuclear Information System (INIS)

    Kamineni, V. K.; Bersch, E. J.; Diebold, A. C.; Raymond, M.; Doris, B. B.

    2010-01-01

    The thickness-dependent optical properties of nickel metal and nickel monosilicide (NiSi) thin films, used for self-aligned silicidation process, were characterized using spectroscopic ellipsometry. The thickness-dependent complex dielectric function of nickel metal films is shown to be correlated with the change in Drude free electron relaxation time. The change in relaxation time can be traced to the change in grain boundary (GB) reflection coefficient and grain size. A resistivity based model was used as the complementary method to the thickness-dependent optical model to trace the change in GB reflection coefficient and grain size. After silicidation, the complex dielectric function of NiSi films exhibit non-Drude behavior due to superimposition of interband absorptions arising at lower frequencies. The Optical models of the complete film stack were refined using x-ray photoelectron spectroscopy, Rutherford backscattered spectroscopy, and x-ray reflectivity (XRR).

  1. How the global layout of the mask influences masking strength.

    Science.gov (United States)

    Ghose, Tandra; Hermens, Frouke; Herzog, Michael H

    2012-12-10

    In visual backward masking, the perception of a target is influenced by a trailing mask. Masking is usually explained by local interactions between the target and the mask representations. However, recently it has been shown that the global spatial layout of the mask rather than its local structure determines masking strength (Hermens & Herzog, 2007). Here, we varied the mask layout by spatial, luminance, and temporal cues. We presented a vernier target followed by a mask with 25 elements. Performance deteriorated when the length of the two mask elements neighboring the target vernier was doubled. However, when the length of every second mask element was doubled, performance improved. When the luminance of the neighboring elements was doubled, performance also deteriorated but no improvement in performance was observed when every second element had a double luminance. For temporal manipulations, a complex nonmonotonic masking function was observed. Hence, changes in the mask layout by spatial, luminance, and temporal cues lead to highly different results.

  2. Mask Phenomenon in Communication

    Institute of Scientific and Technical Information of China (English)

    郎丽璇

    2013-01-01

    People sometimes wear masks. Abusive expression may be used to convey love while polite words can be exchanged among enemies. This essay describes and discusses this special phenomenon in communication and analyzes the elements that con-tribute to the success of a mask communication.

  3. Binary Masking & Speech Intelligibility

    DEFF Research Database (Denmark)

    Boldt, Jesper

    The purpose of this thesis is to examine how binary masking can be used to increase intelligibility in situations where hearing impaired listeners have difficulties understanding what is being said. The major part of the experiments carried out in this thesis can be categorized as either experime......The purpose of this thesis is to examine how binary masking can be used to increase intelligibility in situations where hearing impaired listeners have difficulties understanding what is being said. The major part of the experiments carried out in this thesis can be categorized as either...... experiments under ideal conditions or as experiments under more realistic conditions useful for real-life applications such as hearing aids. In the experiments under ideal conditions, the previously defined ideal binary mask is evaluated using hearing impaired listeners, and a novel binary mask -- the target...... binary mask -- is introduced. The target binary mask shows the same substantial increase in intelligibility as the ideal binary mask and is proposed as a new reference for binary masking. In the category of real-life applications, two new methods are proposed: a method for estimation of the ideal binary...

  4. Mask materials in powderblasting

    NARCIS (Netherlands)

    Wensink, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt

    1999-01-01

    Powderblasting has the opportunity to become a standard technology in micromachining. To machine small details with powderbalsting, it is necessary to use a suiabled mask. In this paper four mask types ares examined. BF400 resist foil is most suitable for standard use in powderblasting for reason of

  5. The Moody Mask Model

    DEFF Research Database (Denmark)

    Larsen, Bjarke Alexander; Andkjær, Kasper Ingdahl; Schoenau-Fog, Henrik

    2015-01-01

    This paper proposes a new relation model, called "The Moody Mask model", for Interactive Digital Storytelling (IDS), based on Franceso Osborne's "Mask Model" from 2011. This, mixed with some elements from Chris Crawford's Personality Models, is a system designed for dynamic interaction between ch...

  6. What's in a mask? Information masking with forward and backward visual masks.

    Science.gov (United States)

    Davis, Chris; Kim, Jeesun

    2011-10-01

    Three experiments tested how the physical format and information content of forward and backward masks affected the extent of visual pattern masking. This involved using different types of forward and backward masks with target discrimination measured by percentage correct in the first experiment (with a fixed target duration) and by an adaptive threshold procedure in the last two. The rationale behind the manipulation of the content of the masks stemmed from masking theories emphasizing attentional and/or conceptual factors rather than visual ones. Experiment 1 used word masks and showed that masking was reduced (a masking reduction effect) when the forward and backward masks were the same word (although in different case) compared to when the masks were different words. Experiment 2 tested the extent to which a reduction in masking might occur due to the physical similarity between the forward and backward masks by comparing the effect of the same content of the masks in the same versus different case. The result showed a significant reduction in masking for same content masks but no significant effect of case. The last experiment examined whether the reduction in masking effect would be observed with nonword masks--that is, having no high-level representation. No reduction in masking was found from same compared to different nonword masks (Experiment 3). These results support the view that the conscious perception of a rapidly displayed target stimulus is in part determined by high-level perceptual/cognitive factors concerned with masking stimulus grouping and attention.

  7. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  8. Extension of optical lithography by mask-litho integration with computational lithography

    Science.gov (United States)

    Takigawa, T.; Gronlund, K.; Wiley, J.

    2010-05-01

    Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

  9. Paper S12 5 : Self-aligned a-IGZO TFTs : Impact of S/D contacts formation on their Negative-Bias-Illumination-Stress (NBIS) instability

    NARCIS (Netherlands)

    Nag, M.; Steudel, S.; Smout, S.; Bhoolokam, A.; Genoe, J.; Cobb, B.; Kumar, A.; Groeseneken, G.; Heremans, P.

    2015-01-01

    In this work, we present the impact of S/D contact formation, that is, by SiN plasma doping (hydrogen incorporation), metallic reduction (by calcium) and by argon plasma (compositional change) on NBIS instabilities of self-aligned a-IGZO TFTs.

  10. Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities

    NARCIS (Netherlands)

    Nag, M.; Steudel, S.; Smout, S.; Bhoolokam, A.; Genoe, J.; Cobb, B.; Kumar, A.; Groeseneken, G.; Heremans, P.

    2015-01-01

    In this study, we have compared the performance of self-aligned a-IGZO thin-film transistors (TFTs) whereby the source/drain (S/D) region's conductivity enhanced in three different ways, that is, using SiNx interlayer plasma (hydrogen diffusion), using calcium (Ca as reducing metal) and using argon

  11. 2012 Mask Industry Survey

    Science.gov (United States)

    Malloy, Matt; Litt, Lloyd C.

    2012-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

  12. Mask quality assessment

    Science.gov (United States)

    Regis, Larry; Paulson, Neil; Reynolds, James A.

    1994-02-01

    Product quality and timely delivery are two of the most important parameters, determining the success of a mask manufacturing facility. Because of the sensitivity of this data, however, very little is known about industry performance in these areas. Using Arthur Andersen & Co. to protect contributor identity, the authors have conducted a blind quality survey of mask shops which represents over 75% of the total merchant and captive mask volume in the US. Quantities such as return rate, plate survival yield, performance to schedule and reason for return were requested from 1988 through Q2 1993. Data is analyzed and conclusions are presented.

  13. EPE analysis of sub-N10 BEoL flow with and without fully self-aligned via using Coventor SEMulator3D

    Science.gov (United States)

    Franke, Joern-Holger; Gallagher, Matt; Murdoch, Gayle; Halder, Sandip; Juncker, Aurelie; Clark, William

    2017-03-01

    During the last few decades, the semiconductor industry has been able to scale device performance up while driving costs down. What started off as simple geometrical scaling, driven mostly by advances in lithography, has recently been accompanied by advances in processing techniques and in device architectures. The trend to combine efforts using process technology and lithography is expected to intensify, as further scaling becomes ever more difficult. One promising component of future nodes are "scaling boosters", i.e. processing techniques that enable further scaling. An indispensable component in developing these ever more complex processing techniques is semiconductor process modeling software. Visualization of complex 3D structures in SEMulator3D, along with budget analysis on film thicknesses, CD and etch budgets, allow process integrators to compare flows before any physical wafers are run. Hundreds of "virtual" wafers allow comparison of different processing approaches, along with EUV or DUV patterning options for defined layers and different overlay schemes. This "virtual fabrication" technology produces massively parallel process variation studies that would be highly time-consuming or expensive in experiment. Here, we focus on one particular scaling booster, the fully self-aligned via (FSAV). We compare metal-via-metal (mevia-me) chains with self-aligned and fully-self-aligned via's using a calibrated model for imec's N7 BEoL flow. To model overall variability, 3D Monte Carlo modeling of as many variability sources as possible is critical. We use Coventor SEMulator3D to extract minimum me-me distances and contact areas and show how fully self-aligned vias allow a better me-via distance control and tighter via-me contact area variability compared with the standard self-aligned via (SAV) approach.

  14. Masked Photocathode for Photoinjector

    International Nuclear Information System (INIS)

    Qiang, Ji

    2010-01-01

    In this research note, we propose a scheme to insert a photocathode inside a photoinjector for generating high brightness electron beam. Instead of mounting the photocathode onto the electrode, a masked electrode with small hole is used to shield the photocathode from the accelerating vacuum chamber. Using such a masked photocathode will make the replacement of photocathode material very simple by rotating the photocathode behind the mask into the hole. This will significantly increase the usage lifetime of a photocathode. Furthermore, this also helps reduce the dark current or secondary electron emission from the photocathode. The hole on the mask also provides a transverse cut-off to the Gaussian laser profile which can be beneficial from the beam dynamics point of view.

  15. Gilded Silver Mask

    Institute of Scientific and Technical Information of China (English)

    1998-01-01

    This gilded silver mask from the Liao Dynasty is 31 cm long and 22.2 cm wide. The plump oval face was designed with a protruding brow ridge, narrow eyes, high-bridged nose and closed mouth. The chin is slightly round against a thin neck, the ears are long and the hair can be clearly seen from the finely carved lines. The use of masks was recorded as

  16. Masks: The Artist in Me

    Science.gov (United States)

    Skophammer, Karen

    2009-01-01

    Whether masks are made from cardboard, papier-mache, metal, wood, leather, fabric, clay or any combination of these materials, they bring out the artist in people. Young children like to wear masks when they play to pretend they were another person or animal. Masks let them fantasize and be creative. The author's students made masks representing…

  17. Expanding the printable design space for lithography processes utilizing a cut mask

    Science.gov (United States)

    Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

    2016-03-01

    The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

  18. Self-aligning exoskeleton hip joint: Kinematic design with five revolute, three prismatic and one ball joint.

    Science.gov (United States)

    Beil, Jonas; Marquardt, Charlotte; Asfour, Tamim

    2017-07-01

    Kinematic compatibility is of paramount importance in wearable robotic and exoskeleton design. Misalignments between exoskeletons and anatomical joints of the human body result in interaction forces which make wearing the exoskeleton uncomfortable and even dangerous for the human. In this paper we present a kinematically compatible design of an exoskeleton hip to reduce kinematic incompatibilities, so called macro- and micro-misalignments, between the human's and exoskeleton's joint axes, which are caused by inter-subject variability and articulation. The resulting design consists of five revolute, three prismatic and one ball joint. Design parameters such as range of motion and joint velocities are calculated based on the analysis of human motion data acquired by motion capture systems. We show that the resulting design is capable of self-aligning to the human hip joint in all three anatomical planes during operation and can be adapted along the dorsoventral and mediolateral axis prior to operation. Calculation of the forward kinematics and FEM-simulation considering kinematic and musculoskeletal constraints proved sufficient mobility and stiffness of the system regarding the range of motion, angular velocity and torque admissibility needed to provide 50 % assistance for an 80 kg person.

  19. Design, manufacture and spin test of high contact ratio helicopter transmission utilizing Self-Aligning Bearingless Planetary (SABP)

    Science.gov (United States)

    Folenta, Dezi; Lebo, William

    1988-01-01

    A 450 hp high ratio Self-Aligning Bearingless Planetary (SABP) for a helicopter application was designed, manufactured, and spin tested under NASA contract NAS3-24539. The objective of the program was to conduct research and development work on a high contact ratio helical gear SABP to reduce weight and noise and to improve efficiency. The results accomplished include the design, manufacturing, and no-load spin testing of two prototype helicopter transmissions, rated at 450 hp with an input speed of 35,000 rpm and an output speed of 350 rpm. The weight power density ratio of these gear units is 0.33 lb hp. The measured airborne noise at 35,000 rpm input speed and light load is 94 dB at 5 ft. The high speed, high contact ratio SABP transmission appears to be significantly lighter and quieter than comtemporary helicopter transmissions. The concept of the SABP is applicable not only to high ratio helicopter type transmissions but also to other rotorcraft and aircraft propulsion systems.

  20. Orion Emergency Mask Approach

    Science.gov (United States)

    Tuan, George C.; Graf, John C.

    2009-01-01

    Emergency mask approach on Orion poses a challenge to the traditional Shuttle or Station approaches. Currently, in the case of a fire or toxic spill event, the crew utilizes open loop oxygen masks that provide the crew with oxygen to breath, but also dumps the exhaled oxygen into the cabin. For Orion, with a small cabin volume, the extra oxygen will exceed the flammability limit within a short period of time, unless a nitrogen purge is also provided. Another approach to a fire or toxic spill event is the use of a filtering emergency masks. These masks utilize some form of chemical beds to scrub the air clean of toxic providing the crew safe breathing air for a period without elevating the oxygen level in the cabin. Using the masks and a form of smoke-eater filter, it may be possible to clean the cabin completely or to a level for safe transition to a space suit to perform a cabin purge. Issues with filters in the past have been the reaction time, breakthroughs, and high breathing resistance. Development in a new form of chemical filters has shown promise to make the filtering approach feasible.

  1. A single mask process for the realization of fully-isolated, dual-height MEMS metallic structures separated by narrow gaps

    Science.gov (United States)

    Li, Yuan; Kim, Minsoo; Allen, Mark G.

    2018-02-01

    Multi-height metallic structures are of importance for various MEMS applications, including master molds for creating 3D structures by nanoimprint lithography, or realizing vertically displaced electrodes for out-of-plane electrostatic actuators. Normally these types of multi-height structures require a multi-mask process with increased fabrication complexity. In this work, a fabrication technology is presented in which fully-isolated, dual-height MEMS metallic structures separated by narrow gaps can be realized using a self-aligned, single-mask process. The main scheme of this proposed process is through-mold electrodeposition, where two photoresist mold fabrication steps and two electrodeposition steps are sequentially implemented to define the thinner and thicker structures in the dual-height configuration. The process relies on two self-aligned steps enabled by the electrodeposited thinner structures: a wet-etching of the seed layer utilizing the thinner structure as an etch-mask to electrically isolate the thinner and the thicker structures, and a backside UV lithography utilizing the thinner structure as a lithographic mask to create a high-aspect-ratio mold for the thicker structure through-mold electrodeposition. The latter step requires the metallic structures to be fabricated on a transparent substrate. Test structures with differences in aspect ratio are demonstrated to showcase the capability of the process.

  2. Individuals and Their Masks

    Directory of Open Access Journals (Sweden)

    Belén Altuna

    2009-08-01

    Full Text Available This essay works on the opposition between face and mask, where ‘face’ is understood as that which makes every human being singular, and makes visible her or his unique worth, while ‘mask’ is understood as whatever hides that singularity, and refers to a category, stereotype or cliché. The etymological history that relates face and mask to the concept of person, and the history of modern portrait painting, which alternates representations of face and mask, both lead to a discussion with authors who diagnose a contemporary “defeat of the face” as a result of the crisis of humanism and of ethical individualism, which give meaning and dignity to that face.

  3. Chips 2020

    CERN Document Server

    2016-01-01

    The release of this second volume of CHIPS 2020 coincides with the 50th anniversary of Moore’s Law, a critical year marked by the end of the nanometer roadmap and by a significantly reduced annual rise in chip performance. At the same time, we are witnessing a data explosion in the Internet, which is consuming 40% more electrical power every year, leading to fears of a major blackout of the Internet by 2020. The messages of the first CHIPS 2020, published in 2012, concerned the realization of quantum steps for improving the energy efficiency of all chip functions. With this second volume, we review these messages and amplify upon the most promising directions: ultra-low-voltage electronics, nanoscale monolithic 3D integration, relevant-data, brain- and human-vision-inspired processing, and energy harvesting for chip autonomy. The team of authors, enlarged by more world leaders in low-power, monolithic 3D, video, and Silicon brains, presents new vistas in nanoelectronics, promising  Moore-like exponential g...

  4. Cationic Reduced Graphene Oxide as Self-Aligned Nanofiller in the Epoxy Nanocomposite Coating with Excellent Anticorrosive Performance and Its High Antibacterial Activity.

    Science.gov (United States)

    Luo, Xiaohu; Zhong, Jiawen; Zhou, Qiulan; Du, Shuo; Yuan, Song; Liu, Yali

    2018-05-17

    The design and preparation of an excellent corrosion protection coating is still a grand challenge and is essential for large-scale practical application. Herein, a novel cationic reduced graphene oxide (denoted as RGO-ID + )-based epoxy coating was fabricated for corrosion protection. RGO-ID + was synthesized by in situ synthesis and salification reaction, which is stable dispersion in water and epoxy latex, and the self-aligned RGO-ID + -reinforced cathodic electrophoretic epoxy nanocomposite coating (denoted as RGO-ID + coating) at the surface of metal was prepared by electrodeposition. The self-alignment of RGO-ID + in the coatings is mainly attributed to the electric field force. The significantly enhanced anticorrosion performance of RGO-ID + coating is proved by a series of electrochemical measurements in different concentrated NaCl solutions and salt spray tests. This superior anticorrosion property benefits from the self-aligned RGO-ID + nanosheets and the quaternary-N groups present in the RGO-ID + nanocomposite coating. Interestingly, the RGO-ID + also exhibits a high antibacterial activity toward Escherichia coli with 83.4 ± 1.3% antibacterial efficiency, which is attributed to the synergetic effects of RGO-ID + and the electrostatic attraction and hydrogen bonding between RGO-ID + and E. coli. This work offers new opportunities for the successful development of effective corrosion protection and self-antibacterial coatings.

  5. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    Science.gov (United States)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  6. Competing for Consciousness: Prolonged Mask Exposure Reduces Object Substitution Masking

    Science.gov (United States)

    Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

    2011-01-01

    In object substitution masking (OSM) a sparse, temporally trailing 4-dot mask impairs target identification, even though it has different contours from, and does not spatially overlap with the target. Here, we demonstrate a previously unknown characteristic of OSM: Observers show reduced masking at prolonged (e.g., 640 ms) relative to intermediate…

  7. Mask industry quality assessment

    Science.gov (United States)

    Strott, Al; Bassist, Larry

    1994-12-01

    Product quality and timely delivery are two of the most important parameters in determining the success of a mask manufacturing facility. Because of the sensitivity of this data, very little was known about industry performance in these areas until an assessment was authored and presented at the 1993 BACUS Symposium by Larry Regis of Intel Corporation, Neil Paulsen of Intel Corporation, and James A. Reynolds of Reynolds Consulting. This data has been updated and will be published and presented at this year's BACUS Symposium. Contributor identities will again remain protected by utilizing Arthur Andersen & Company to compile the submittals. Participation was consistent with last year's representation of over 75% of the total merchant and captive mask volume in the United States. The data compiled includes shipments, customer return rate, customer return reasons from 1988 through Q2, 1994, performance to schedule, plate survival yield, and throughput time (TPT).

  8. Mask strategy at International SEMATECH

    Science.gov (United States)

    Kimmel, Kurt R.

    2002-08-01

    International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for its member companies to realize the International Technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. The largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. The development strategy at International SEMATCH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International Technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

  9. Multiproject wafers: not just for million-dollar mask sets

    Science.gov (United States)

    Morse, Richard D.

    2003-06-01

    With the advent of Reticle Enhancement Technologies (RET) such as Optical Proximity Correction (OPC) and Phase Shift Masks (PSM) required to manufacture semiconductors in the sub-wavelength era, the cost of photomask tooling has skyrocketed. On the leading edge of technology, mask set prices often exceed $1 million. This shifts an enormous burden back to designers and Electronic Design Automation (EDA) software vendors to create perfect designs at a time when the number of transistors per chip is measured in the hundreds of millions, and gigachips are on the drawing boards. Moore's Law has driven technology to incredible feats. The prime beneficiaries of the technology - memory and microprocessor (MPU) manufacturers - can continue to fit the model because wafer volumes (and chip prices in the MPU case) render tooling costs relatively insignificant. However, Application-Specific IC (ASIC) manufacturers and most foundry clients average very small wafer per reticle ratios causing a dramatic and potentially insupportable rise in the cost of manufacturing. Multi-Project wafers (MPWs) are a way to share the cost of tooling and silicon by putting more than one chip on each reticle. Lacking any unexpected breakthroughs in simulation, verification, or mask technology to reduce the cost of prototyping, more efficient use of reticle space becomes a viable and increasingly attractive choice. It is worthwhile therefore, to discuss the economics of prototyping in the sub-wavelength era and the increasing advantages of the MPW, shared-silicon approach. However, putting together a collection of different-sized chips during tapeout can be challenging and time consuming. Design compatibility, reticle field optimization, and frame generation have traditionally been the biggest worries but, with the advent of dummy-fill for planarization and RET for resolution, another layer of complexity has been added. MPW automation software is quite advanced today, but the size of the task

  10. Mask fabrication process

    Science.gov (United States)

    Cardinale, Gregory F.

    2000-01-01

    A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

  11. X-ray masks

    International Nuclear Information System (INIS)

    Greenwood, J.C.; Satchell, D.W.

    1984-01-01

    In semiconductor manufacture, where X-ray irradiation is used, a thin silicon membrane can be used as an X-ray mask. This membrane has areas on which are patterns to define the regions to be irradiated. These regions are of antireflection material. With the thin, in the order of 3 microns, membranes used, fragility is a problem. Hence a number of ribs of silicon are formed integral with the membrane, and which are relatively thick, 5 to 10 microns. The ribs may be formed by localised deeper boron deposition followed by a selective etch. (author)

  12. Mask alignment system for semiconductor processing

    Science.gov (United States)

    Webb, Aaron P.; Carlson, Charles T.; Weaver, William T.; Grant, Christopher N.

    2017-02-14

    A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered onto the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece.

  13. Akathisia masked by hypokinesia.

    Science.gov (United States)

    Tuisku, K; Lauerma, H; Holi, M M; Honkonen, T; Rimon, R

    2000-07-01

    Here, we will discuss the concept of subjective akathisia and present a patient case. Our patient was suffering from neuroleptic-induced hypokinesia and akathisia at the same time. The typical motor manifestations of akathisia were masked by hypokinesia, which made the diagnosis difficult. However, the subjective symptoms of akathisia were evident and distressing. Although not observable to bare eye, the pathognomonic pattern of motor activity detected in akathisia was demonstrated by actometric recording. Changing the conventional neuroleptic to an atypical one brought relief to the subjective symptoms of akathisia and hypokinesia, while the motor activity was clearly diminished in actometric recording. Actometric recording may be useful in diagnosing akathisia masked by hypokinesia, but the typical subjective symptoms of akathisia should not be ignored, even when actometry is not available to demonstrate the missing motor component of akathisia. Not only akathisia defined by DSM-IV but also subjective akathisia should be adequately treated to relieve the subjective distress, and to diminish the unfavorable effects on psychotic symptoms, behavior, and drug compliance.

  14. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  15. Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

    Science.gov (United States)

    Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

    2016-08-23

    We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

  16. A simple method of fabricating mask-free microfluidic devices for biological analysis.

    KAUST Repository

    Yi, Xin; Kodzius, Rimantas; Gong, Xiuqing; Xiao, Kang; Wen, Weijia

    2010-01-01

    We report a simple, low-cost, rapid, and mask-free method to fabricate two-dimensional (2D) and three-dimensional (3D) microfluidic chip for biological analysis researches. In this fabrication process, a laser system is used to cut through paper

  17. The implementation of Mask-Ed: reflections of academic participants.

    Science.gov (United States)

    Reid-Searl, Kerry; Levett-Jones, Tracy; Cooper, Simon; Happell, Brenda

    2014-09-01

    This paper profiles the findings from a study that explored the perspectives and experiences of nurse educators who implemented a novel simulation approach termed Mask-Ed. The technique involves the educator wearing a silicone mask and or body parts and transforming into a character. The premise of this approach is that the masked educator has domain specific knowledge related to the simulation scenario and can transmit this to learners in a way that is engaging, realistic, spontaneous and humanistic. Nurse educators charged with the responsibility of implementing Mask-Ed in three universities were invited to participate in the study by attending an introductory workshop, implementing the technique and then journaling their experiences, insights and perspectives over a 12 month period. The journal entries were then thematically analysed. Key themes were categorised under the headings of Preparation, Implementation and Impact; Reflexivity and Responsiveness; Student Engagement and Ownership; and Teaching and Learning. Mask-Ed is a simulation approach which allows students to interact with the 'characters' in humanistic ways that promote person-centred care and therapeutic communication. This simulation approach holds previously untapped potential for a range of learning experiences, however, to be effective, adequate resourcing, training, preparation and practice is required. Copyright © 2014 Elsevier Ltd. All rights reserved.

  18. SEMATECH EUVL mask program status

    Science.gov (United States)

    Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

    2009-04-01

    As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been

  19. Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

    Science.gov (United States)

    Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

    2011-03-01

    Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

  20. Single photoresist masking for local porous Si formation

    International Nuclear Information System (INIS)

    Hourdakis, E; Nassiopoulou, A G

    2014-01-01

    A simple process for local electrochemical porous Si formation on a Si wafer using a photoresist mask was developed. In this respect, the AZ9260 photoresist from MicroChemicals was used, which is easily removed by simple immersion in acetone after the electrochemical process. The photoresist layer thickness and its adhesion to the Si substrate were optimized for increased etch resistance to the anodization solution. Using the above process, mesoporous Si layers as thick as 50 μm were locally formed on the Si wafer through the photoresist mask. The developed process paves the way towards a simple industrial batch Si technology process for the fabrication of mixed Si wafers containing local porous Si areas. These wafers are very interesting for future system-on-chip (SoC) applications, including RF analog/digital and sensors/electronics SoCs. (technical note)

  1. Masks for extreme ultraviolet lithography

    International Nuclear Information System (INIS)

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y.

    1998-01-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed

  2. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

    2015-01-01

    This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity. PMID:28788026

  3. Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

    2015-04-13

    This study proposes a two-photomask process for fabricating amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO₂ combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO₂ deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

  4. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2015-04-01

    Full Text Available This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO thin-film transistors (TFTs that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

  5. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  6. Roughness and uniformity improvements on self-aligned quadruple patterning technique for 10nm node and beyond by wafer stress engineering

    Science.gov (United States)

    Liu, Eric; Ko, Akiteru; O'Meara, David; Mohanty, Nihar; Franke, Elliott; Pillai, Karthik; Biolsi, Peter

    2017-05-01

    Dimension shrinkage has been a major driving force in the development of integrated circuit processing over a number of decades. The Self-Aligned Quadruple Patterning (SAQP) technique is widely adapted for sub-10nm node in order to achieve the desired feature dimensions. This technique provides theoretical feasibility of multiple pitch-halving from 193nm immersion lithography by using various pattern transferring steps. The major concept of this approach is to a create spacer defined self-aligned pattern by using single lithography print. By repeating the process steps, double, quadruple, or octuple are possible to be achieved theoretically. In these small architectures, line roughness control becomes extremely important since it may contribute to a significant portion of process and device performance variations. In addition, the complexity of SAQP in terms of processing flow makes the roughness improvement indirective and ineffective. It is necessary to discover a new approach in order to improve the roughness in the current SAQP technique. In this presentation, we demonstrate a novel method to improve line roughness performances on 30nm pitch SAQP flow. We discover that the line roughness performance is strongly related to stress management. By selecting different stress level of film to be deposited onto the substrate, we can manipulate the roughness performance in line and space patterns. In addition, the impact of curvature change by applied film stress to SAQP line roughness performance is also studied. No significant correlation is found between wafer curvature and line roughness performance. We will discuss in details the step-by-step physical performances for each processing step in terms of critical dimension (CD)/ critical dimension uniformity (CDU)/line width roughness (LWR)/line edge roughness (LER). Finally, we summarize the process needed to reach the full wafer performance targets of LWR/LER in 1.07nm/1.13nm on 30nm pitch line and space pattern.

  7. Mechanical alignment of substrates to a mask

    Science.gov (United States)

    Webb, Aaron P.; Carlson, Charles T.; Honan, Michael; Amato, Luigi G.; Grant, Christopher Neil; Strassner, James D.

    2016-11-08

    A plurality of masks is attached to the underside of a mask frame. This attachment is made such that each mask can independently move relative to the mask frame in three directions. This relative movement allows each mask to adjust its position to align with respective alignment pins disposed on a working surface. In one embodiment, each mask is attached to the mask frame using fasteners, where the fasteners have a shaft with a diameter smaller than the diameter of the mounting hole disposed on the mask. A bias element may be used to allow relative movement between the mask and the mask frame in the vertical direction. Each mask may also have kinematic features to mate with the respective alignment pins on the working surface.

  8. Influence of mask type and mask position on the effectiveness of bag-mask ventilation in a neonatal manikin.

    Science.gov (United States)

    Deindl, Philipp; O'Reilly, Megan; Zoller, Katharina; Berger, Angelika; Pollak, Arnold; Schwindt, Jens; Schmölzer, Georg M

    2014-01-01

    Anatomical face mask with an air cushion rim might be placed accidentally in a false orientation on the newborn's face or filled with various amounts of air during neonatal resuscitation. Both false orientation as well as variable filling may reduce a tight seal and therefore hamper effective positive pressure ventilation (PPV). We aimed to measure the influence of mask type and mask position on the effectiveness of PPV. Twenty neonatal staff members delivered PPV to a modified, leak-free manikin. Resuscitation parameters were recorded using a self-inflatable bag PPV with an Intersurgical anatomical air cushion rim face mask (IS) and a size 0/1 Laerdal round face mask. Three different positions of the IS were tested: correct position, 90° and 180° rotation in reference to the midline of the face. IS masks in each correct position on the face but with different inflation of the air cushion (empty, 10, 20 and 30 mL). Mask leak was similar with mask rotation to either 90° or 180° but significantly increased from 27 (13-73) % with an adequate filled IS mask compared to 52 (16-83) % with an emptied air cushion rim. Anatomical-shaped face mask had similar mask leaks compared to round face mask. A wrongly positioned anatomical-shaped mask does not influence mask leak. Mask leak significantly increased once the air cushion rim was empty, which may cause failure in mask PPV.

  9. Image differencing using masked CCD

    International Nuclear Information System (INIS)

    Rushbrooke, J.G.; Ansorge, R.E.; Webber, C.J. St. J.

    1987-01-01

    A charge coupled device has some of its ''pixels'' masked by a material which is opaque to the radiation to which the device is to be exposed, each masked region being employed as a storage zone into which the charge pattern from the unmasked pixels can be transferred to enable a subsequent charge pattern to be established on further exposure of the unmasked pixels. The components of the resulting video signal corresponding to the respective charge patterns read-out from the CCD are subtracted to produce a video signal corresponding to the difference between the two images which formed the respective charge patterns. Alternate rows of pixels may be masked, or chequer-board pattern masking may be employed. In an X-ray imaging system the CCD is coupled to image intensifying and converting means. (author)

  10. Vibrotactile masking through the body.

    Science.gov (United States)

    D'Amour, Sarah; Harris, Laurence R

    2014-09-01

    Touches on one hand or forearm can affect tactile sensitivity at contralateral locations on the opposite side of the body. These interactions suggest an intimate connection between the two sides of the body. Here, we explore the effect of masking not across the body but through the body by measuring the effect of a masking stimulus on the back on the tactile sensitivity of the corresponding point on the front. Tactile sensitivity was measured on each side of the stomach, while vibrotactile masking stimulation was applied to one side of the front and to points on the back including the point directly behind the test point on the front. Results were compared to sensitivity, while vibrotactile stimulation was applied to a control site on the shoulder. A reduction in sensitivity of about .8 dB was found that required the masking stimulus to be within about 2 cm of the corresponding point on the back.

  11. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-01-01

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during

  12. Rapid iconic erasure without masking.

    Science.gov (United States)

    Tijus, Charles Albert; Reeves, Adam

    2004-01-01

    We report on the erasure of the iconic memory of an array of 12 black letters flashed on a continuously- present white field. Erasure is accomplished by replacing the 16 ms letter array (frame 1) with a blank white frame for 16 ms (frame 2). The letter array returns in frame 3, with from one to six letters missing. Report of the missing letters is accurate without the blank white frame but is impoverished with it, as if interposing the blank erases the icon. Erasure occurs without any obvious luminance masking, 'mud splashes', pattern masking (backward, forward, or metacontrast), lateral masking, or masking by object substitution. Erasure is greatly decreased if the blank is presented one frame earlier or later. We speculate that erasure is due to a rapid reset of the icon produced by an informational mis-match.

  13. A simple method of fabricating mask-free microfluidic devices for biological analysis.

    KAUST Repository

    Yi, Xin

    2010-09-07

    We report a simple, low-cost, rapid, and mask-free method to fabricate two-dimensional (2D) and three-dimensional (3D) microfluidic chip for biological analysis researches. In this fabrication process, a laser system is used to cut through paper to form intricate patterns and differently configured channels for specific purposes. Bonded with cyanoacrylate-based resin, the prepared paper sheet is sandwiched between glass slides (hydrophilic) or polymer-based plates (hydrophobic) to obtain a multilayer structure. In order to examine the chip\\'s biocompatibility and applicability, protein concentration was measured while DNA capillary electrophoresis was carried out, and both of them show positive results. With the utilization of direct laser cutting and one-step gas-sacrificing techniques, the whole fabrication processes for complicated 2D and 3D microfluidic devices are shorten into several minutes which make it a good alternative of poly(dimethylsiloxane) microfluidic chips used in biological analysis researches.

  14. Registration performance on EUV masks using high-resolution registration metrology

    Science.gov (United States)

    Steinert, Steffen; Solowan, Hans-Michael; Park, Jinback; Han, Hakseung; Beyer, Dirk; Scherübl, Thomas

    2016-10-01

    Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

  15. Pixel detector readout chip

    CERN Multimedia

    1991-01-01

    Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

  16. A masking index for quantifying hidden glitches

    OpenAIRE

    Berti-Equille, Laure; Loh, J. M.; Dasu, T.

    2015-01-01

    Data glitches are errors in a dataset. They are complex entities that often span multiple attributes and records. When they co-occur in data, the presence of one type of glitch can hinder the detection of another type of glitch. This phenomenon is called masking. In this paper, we define two important types of masking and propose a novel, statistically rigorous indicator called masking index for quantifying the hidden glitches. We outline four cases of masking: outliers masked by missing valu...

  17. A flip chip process based on electroplated solder bumps

    Science.gov (United States)

    Salonen, J.; Salmi, J.

    1994-01-01

    Compared to wire bonding and TAB, flip chip technology using solder joints offers the highest pin count and packaging density and superior electrical performance. The chips are mounted upside down on the substrate, which can be made of silicon, ceramic, glass or - in some cases - even PCB. The extra processing steps required for chips are the deposition of a suitable thin film metal layer(s) on the standard Al pad and the formation of bumps. Also, the development of new fine line substrate technologies is required to utilize the full potential of the technology. In our bumping process, bump deposition is done by electroplating, which was chosen for its simplicity and economy. Sputter deposited molybdenum and copper are used as thin film layers between the aluminum pads and the solder bumps. A reason for this choice is that the metals can be selectively etched after bumping using the bumps as a mask, thus circumventing the need for a separate mask for etching the thin film metals. The bumps are electroplated from a binary Pb-Sn bath using a thick liquid photoresist. An extensively modified commercial flip chip bonder is used for alignment and bonding. Heat assisted tack bonding is used to attach the chips to the substrate, and final reflow joining is done without flux in a vacuum furnace.

  18. Contralateral tactile masking between forearms.

    Science.gov (United States)

    D'Amour, Sarah; Harris, Laurence R

    2014-03-01

    Masking effects have been demonstrated in which tactile sensitivity is affected when one touch is close to another on the body surface. Such effects are likely a result of local lateral inhibitory circuits that sharpen the spatial tuning of a given tactile receptor. Mutually inhibitory pathways have also been demonstrated between cortical tactile maps of the two halves of the body. Occasional reports have indicated that touches on one hand or forearm can affect tactile sensitivity at contralateral locations. Here, we measure the spatial tuning and effect of posture on this contralateral masking effect. Tactile sensitivity was measured on one forearm, while vibrotactile masking stimulation was applied to the opposite arm. Results were compared to sensitivity while vibrotactile stimulation was applied to a control site on the right shoulder. Sensitivity on the forearm was reduced by over 3 dB when the arms were touching and by 0.52 dB when they were held parallel. The masking effect depended on the position of the masking stimulus. Its effectiveness fell off by 1 STD when the stimulus was 29 % of arm length from the corresponding contralateral point. This long-range inhibitory effect in the tactile system suggests a surprisingly intimate relationship between the two sides of the body.

  19. Self-Rescue Mask Training

    CERN Multimedia

    2013-01-01

    Nine new self-rescue mask instructors have been trained since early 2013, which provides CERN with a total of 26 self-rescue mask instructors to date. This will allow us to meet the increasing training needs caused by the Long Shut Down LS1.   The self-rescue mask instructors have trained 1650 persons in 2012 and about 500 persons since the beginning of the year on how to wear the masks properly. We thank all the instructors and all the persons that made this training possible. Please remember that the self-rescue masks training sessions are scheduled as follows: Basic course: Tuesday and Thursday mornings (2 sessions – 8.30 AM and 10.30 AM), duration:  1.30 hour, in French and English – registration via CERN online training catalogue – Course code 077Y00. Refresher training : Monday mornings (2 sessions – 8.30 AM and 10.30 AM), duration: 1.30 hour , in French and English – registration via CERN online training catalogue &...

  20. Mask characterization for CDU budget breakdown in advanced EUV lithography

    Science.gov (United States)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2012-11-01

    As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget

  1. 1995 mask industry quality assessment

    Science.gov (United States)

    Bishop, Chris; Strott, Al

    1995-12-01

    The third annual mask industry assessment will again survey various industry companies for key performance measurements in the areas of quality and delivery. This year's assessment is enhanced to include the area of safety and further breakdown of the data into 5-inch vs. 6- inch. The data compiled includes shipments, customer return rate, customer return reason, performance to schedule, plate survival yield, and throughput time (TPT) from 1988 through Q2, 1995. Contributor identities remain protected by utilizing Arthur Andersen & Company to ensure participant confidentiality. Participation in the past included representation of over 75% of the total merchant and captive mask volume in the United States. This year's assessment is expected to result in expanded participation by again inviting all mask suppliers domestically to participate as well as an impact from inviting international suppliers to participate.

  2. Electrostatic mask for active targets

    International Nuclear Information System (INIS)

    Pancin, J; Gangnant, P; Libin, J-F; Raabe, R; Roger, T; Roussel-Chomaz, P; Gibelin, J; Goth, M

    2012-01-01

    Active gas targets have been used in nuclear physics since 30 years. They are promising systems in view of the new exotic beams soon available at facilities like SPIRAL2 or FAIR, but the system can still be improved. One of the main limitation is the dynamic range in energy deposition. The energy deposited per unit length can be 3 decades higher for the beam than for the light reaction products and the risk to saturate the electronics or that the detector spark are not negligible. A simple solution using a wire plane to mask partially the beam is presented here. Some simulation has been realized and some experimental results are shown confirming the feasibility of this wire tunable mask. The mask can be used from full transparency to full opacity without degrading neither the drift electric field of the chamber nor the performances of detection of the beam or the light products.

  3. Self-masking subtraction tomosynthesis

    International Nuclear Information System (INIS)

    Chakraborty, D.P.; Yester, M.V.; Barnes, G.T.; Lakshminarayanan, A.V.

    1984-01-01

    The authors tested the image quality and dose savings of self-masking subtraction tomosynthesis (SST), which combines digital tomosynthesis with subtraction of a blurred self-mask. High-quality images of the inner ear of a head phantom were obtained at moderate dose savings. Although they were taken with linear motion, they did not exhibit the streaking due to off-fulcrum objects that is characteristic of conventional linear tomography. SST could reduce patient dose by a factor of at least 12 in examinations of the inner ear, and the mechanical aspects can be implemented with moderate modifications of existing instrumentation

  4. Dynamic analysis of double-row self-aligning ball bearings due to applied loads, internal clearance, surface waviness and number of balls

    Science.gov (United States)

    Zhuo, Yaobin; Zhou, Xiaojun; Yang, Chenlong

    2014-11-01

    In this paper, a three degrees of freedom (dof) model was established for a double-row self-aligning ball bearing (SABB) system, and was applied to study the dynamic behavior of the system during starting process and constant speed rotating process. A mathematical model was developed concerning stiffness and damping characteristics of the bearing, as well as three-dimensional applied load, rotor centrifugal force, etc. Balls and races were all considered as nonlinear springs, and the contact force between ball and race was calculated based on classic Hertzian elastic contact deformation theory and deformation compatibility theory. The changes of each ball's contact force and loaded angle of each row were taken into account. In order to solve the nonlinear dynamical equilibrium equations of the system, these equations were rewritten as differential equations and the fourth order Runge-Kutta method was used to solve the equations iteratively. In order to verify accuracy of the dynamical model and correctness of the numerical solution method, a kind of SABB-BRF30 was chosen for case studies. The effects of several important governing parameters, such as radial and axial applied loads, normal internal, inner and outer races waviness, and number of balls were investigated. These parametric studies led to a complete characterization of the shaft-bearing system vibration transmission. The research provided a theoretical reference for new type bearing design, shaft-bearing system kinetic analysis, optimal design, etc.

  5. Interfacial Engineering of Nanoporous Architectures in Ga2O3 Film toward Self-Aligned Tubular Nanostructure with an Enhanced Photocatalytic Activity on Water Splitting.

    Science.gov (United States)

    Shrestha, Nabeen K; Bui, Hoa Thi; Lee, Taegweon; Noh, Yong-Young

    2018-04-17

    The present work demonstrates the formation of self-aligned nanoporous architecture of gallium oxide by anodization of gallium metal film controlled at -15 °C in aqueous electrolyte consisting of phosphoric acid. SEM examination of the anodized film reveals that by adding ethylene glycol to the electrolyte and optimizing the ratio of phosphoric acid and water, chemical etching at the oxide/electrolyte interfaces can be controlled, leading to the formation of aligned nanotubular oxide structures with closed bottom. XPS analysis confirms the chemical composition of the oxide film as Ga 2 O 3 . Further, XRD and SAED examination reveals that the as-synthesized nanotubular structure is amorphous, and can be crystallized to β-Ga 2 O 3 phase by annealing the film at 600 °C. The nanotubular structured film, when used as photoanode for photoelectrochemical splitting of water, achieved a higher photocurrent of about two folds than that of the nanoporous film, demonstrating the rewarding effect of the nanotubular structure. In addition, the work also demonstrates the formation of highly organized nonporous Ga 2 O 3 structure on a nonconducting glass substrate coated with thin film of Ga-metal, highlighting that the current approach can be extended for the formation of self-organized nanoporous Ga 2 O 3 thin film even on nonconducting flexible substrates.

  6. Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

    Science.gov (United States)

    Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

    2013-01-01

    A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

  7. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

    Science.gov (United States)

    Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

    2013-01-01

    A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

  8. Development of a guiding system and visual feedback real-time controller for the high-speed self-align optical cable winding

    International Nuclear Information System (INIS)

    Lee, Chang Woo; Kang, Hyun Kyoo; Shin, Kee Hyun

    2008-01-01

    Recently, the demand for the optical cable has been rapidly growing because of the increasing number of internet users and the high speed internet data transmission required. But the present optical cable winding systems have some serious problems such as pile-up and collapse of cables usually near the flange of the bobbin in the process of cables winding. To reduce the pile-up collapse in cable winding systems, a new guiding system is developed for a high-speed self-align cable winding. First, mathematical models for the winding process and bobbin shape fault compensation were proposed, the winding mechanism was analyzed and synchronization logics for the motions of winding, traversing, and the guiding were created. A prototype cable winding systems was manufactured to validate the new guiding system and the suggested logic. Experiment results showed that the winding system with the developed guiding system outperformed the system without the guiding system in reducing pile-up and collapse in high-speed winding

  9. Masked hypertension in diabetes mellitus

    DEFF Research Database (Denmark)

    Franklin, Stanley S; Thijs, Lutgarde; Li, Yan

    2013-01-01

    Although distinguishing features of masked hypertension in diabetics are well known, the significance of antihypertensive treatment on clinical practice decisions has not been fully explored. We analyzed 9691 subjects from the population-based 11-country International Database on Ambulatory Blood...

  10. Gamma camera with reflectivity mask

    International Nuclear Information System (INIS)

    Stout, K.J.

    1980-01-01

    In accordance with the present invention there is provided a radiographic camera comprising: a scintillator; a plurality of photodectors positioned to face said scintillator; a plurality of masked regions formed upon a face of said scintillator opposite said photdetectors and positioned coaxially with respective ones of said photodetectors for decreasing the amount of internal reflection of optical photons generated within said scintillator. (auth)

  11. AutoMOPS- B2B and B2C in mask making: Mask manufacturing performance and customer satisfaction improvement through better information flow management using generic models and standardized languages

    Science.gov (United States)

    Filies, Olaf; de Ridder, Luc; Rodriguez, Ben; Kujiken, Aart

    2002-03-01

    Semiconductor manufacturing has become a global business, in which companies of different size unite in virtual enterprises to meet new opportunities. Therefore Mask manufacturing is a key business, but mask ordering is a complex process and is always critical regarding design to market time, even though mask complexity and customer base are increasing using a wide variety of different mask order forms which are frequently faulty and very seldom complete. This is effectively blocking agile manufacturing and can tie wafer fabs to a single mask The goal of the project is elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and production stages, which will allow automation of the mask preparation. To cover these new techniques and their specifications as well as the common ones with automated tools a special generic Meta-model will be generated, based on the current standards for mask specifications, including the requirements from the involved partners (Alcatel Microelectronics, Altis, Compugraphics, Infineon, Nimble, Sigma-C), the project works out a pre-normative standard. The paper presents the current status of work. This work is partly funded by the Commission of the European Union under the Fifth Framework project IST-1999-10332 AutoMOPS.

  12. Computer-aided engineering system for design of sequence arrays and lithographic masks

    Science.gov (United States)

    Hubbell, Earl A.; Morris, MacDonald S.; Winkler, James L.

    1996-01-01

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

  13. "The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

    Science.gov (United States)

    Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

    2015-01-01

    Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

  14. Gestalt grouping and common onset masking.

    Science.gov (United States)

    Kahan, Todd A; Mathis, Katherine M

    2002-11-01

    A four-dot mask that surrounds and is presented simultaneously with a briefly presented target will reduce a person's ability to identity that target if the mask persists beyond target offset and attention is divided (Enns & Di Lollo, 1997, 2000). This masking effect, referred to as common onset masking, reflects reentrant processing in the visual system and can best be explained with a theory of object substitution (Di Lollo, Enns, & Rensink, 2000). In the present experiments, we investigated whether Gestalt grouping variables would influence the strength of common onset masking. The results indicated that (1) masking was impervious to grouping by form, similarity of color, position, luminance polarity, and common region and (2) masking increased with the number of elements in the masking display.

  15. UW VLSI chip tester

    Science.gov (United States)

    McKenzie, Neil

    1989-12-01

    We present a design for a low-cost, functional VLSI chip tester. It is based on the Apple MacIntosh II personal computer. It tests chips that have up to 128 pins. All pin drivers of the tester are bidirectional; each pin is programmed independently as an input or an output. The tester can test both static and dynamic chips. Rudimentary speed testing is provided. Chips are tested by executing C programs written by the user. A software library is provided for program development. Tests run under both the Mac Operating System and A/UX. The design is implemented using Xilinx Logic Cell Arrays. Price/performance tradeoffs are discussed.

  16. 21 CFR 868.5590 - Scavenging mask.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food... DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification. A scavenging mask is a device positioned over a patient's nose to deliver anesthetic or analgesic gases to the...

  17. Ergonomic evaluation of pilot oxygen mask designs

    NARCIS (Netherlands)

    Lee, W.; Yang, Xiaopeng; Jung, Daehan; Park, Seikwon; Kim, Heeeun; You, Heecheon

    2018-01-01

    A revised pilot oxygen mask design was developed for better fit to the Korean Air Force pilots’ faces. The present study compared an existing pilot oxygen mask and a prototype of the revised mask design with 88 Korean Air Force pilots in terms of subjective discomfort, facial contact pressure,

  18. 21 CFR 868.5580 - Oxygen mask.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device...

  19. 21 CFR 868.5570 - Nonrebreathing mask.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask. (a) Identification. A nonrebreathing mask is a device fitting over a patient's face to administer oxygen. It utilizes...

  20. 21 CFR 868.5600 - Venturi mask.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is a...

  1. Rates of initial acceptance of PAP masks and outcomes of mask switching.

    Science.gov (United States)

    Bachour, Adel; Vitikainen, Pirjo; Maasilta, Paula

    2016-05-01

    Recently, we noticed a considerable development in alleviating problems related to positive airway pressure (PAP) masks. In this study, we report on the initial PAP mask acceptance rates and the effects of mask switching on mask-related symptoms. We prospectively collected all cases of mask switching in our sleep unit for a period of 14 months. At the time of the study, we used ResMed™ CPAP devices and masks. Mask switching was defined as replacing a mask used for at least 1 day with another type of mask. Changing to a different size but keeping the same type of mask did not count as mask switching. Switching outcomes were considered failed if the initial problem persisted or reappeared during the year that followed switching. Our patient pool was 2768. We recorded 343 cases of mask switching among 267 patients. Of the 566 patients who began new PAP therapy, 108 (39 women) had switched masks, yielding an initial mask acceptance rate of 81 %. The reason for switching was poor-fit/uncomfortable mask in 39 %, leak-related in 30 %, outdated model in 25 %, and nasal stuffiness in 6 % of cases; mask switching resolved these problems in 61 %. Mask switching occurred significantly (p = 0.037) more often in women and in new PAP users. The odds ratio for abandoning PAP therapy within 1 year after mask switching was 7.2 times higher (interval 4.7-11.1) than not switching masks. The initial PAP mask acceptance rate was high. Patients who switched their masks are at greater risk for abandoning PAP therapy.

  2. Masking and Partial Masking in Listeners with a High-Frequency Hearing Loss

    NARCIS (Netherlands)

    Smits, J.T.S.; Duifhuis, H.

    1982-01-01

    3 listeners with sensorineural hearing loss ranging from moderate to moderate-severe starting at frequencies higher than 1 kHz participated in two masking experiments and a partial masking experiment. In the first masking experiment, fM = 1 kHz and LM = 50 dB SPL, higher than normal masked

  3. Harshlight: a "corrective make-up" program for microarray chips

    Directory of Open Access Journals (Sweden)

    Wittkowski Knut M

    2005-12-01

    Full Text Available Abstract Background Microscopists are familiar with many blemishes that fluorescence images can have due to dust and debris, glass flaws, uneven distribution of fluids or surface coatings, etc. Microarray scans do show similar artifacts, which might affect subsequent analysis. Although all but the starkest blemishes are hard to find by the unaided eye, particularly in high-density oligonucleotide arrays (HDONAs, few tools are available to help with the detection of those defects. Results We develop a novel tool, Harshlight, for the automatic detection and masking of blemishes in HDONA microarray chips. Harshlight uses a combination of statistic and image processing methods to identify three different types of defects: localized blemishes affecting a few probes, diffuse defects affecting larger areas, and extended defects which may invalidate an entire chip. Conclusion We demonstrate the use of Harshlight can materially improve analysis of HDONA chips, especially for experiments with subtle changes between samples. For the widely used MAS5 algorithm, we show that compact blemishes cause an average of 8 gene expression values per chip to change by more than 50%, two of them by more than twofold; our masking algorithm restores about two thirds of this damage. Large-scale artifacts are successfully detected and eliminated.

  4. Extracting messages masked by chaos

    International Nuclear Information System (INIS)

    Perez, G.; Cerdeira, H.A.

    1995-01-01

    We show how to extract messages that are masked by a chaotic signal in a system of two Lorenz oscillators. This mask removal is done for two different modes of transmission, a digital one where a parameter of the sender is switched between two values, and an analog mode, where a small amplitude message is added to the carrier signal. We achieve this without using a second Lorenz oscillator as receiver, and without doing a full reconstruction of the dynamics. This method is robust with respect to transformations that impede the unmasking using a Lorenz receiver, and is not affected by the broad-band noise that is inherent to the synchronization process. We also discuss the limitations of this way of extraction for messages in high frequency bands. (author). 12 refs, 4 figs

  5. Challenges of anamorphic high-NA lithography and mask making

    Science.gov (United States)

    Hsu, Stephen D.; Liu, Jingjing

    2017-06-01

    Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10

  6. Sinusoidal masks for single channel speech separation

    DEFF Research Database (Denmark)

    Mowlaee, Pejman; Christensen, Mads Græsbøll; Jensen, Søren Holdt

    2010-01-01

    In this paper we present a new approach for binary and soft masks used in single-channel speech separation. We present a novel approach called the sinusoidal mask (binary mask and Wiener filter) in a sinusoidal space. Theoretical analysis is presented for the proposed method, and we show...... that the proposed method is able to minimize the target speech distortion while suppressing the crosstalk to a predetermined threshold. It is observed that compared to the STFTbased masks, the proposed sinusoidal masks improve the separation performance in terms of objective measures (SSNR and PESQ) and are mostly...

  7. ALICE chip processor

    CERN Multimedia

    Maximilien Brice

    2003-01-01

    This tiny chip provides data processing for the time projection chamber on ALICE. Known as the ALICE TPC Read Out (ALTRO), this device was designed to minimize the size and power consumption of the TPC front end electronics. This single chip contains 16 low-power analogue-to-digital converters with six million transistors of digital processing and 8 kbits of data storage.

  8. Shadows alter facial expressions of Noh masks.

    Directory of Open Access Journals (Sweden)

    Nobuyuki Kawai

    Full Text Available BACKGROUND: A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers' recognition of the emotional expressions. METHODOLOGY/PRINCIPAL FINDINGS: In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. CONCLUSIONS/SIGNIFICANCE: Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa's smile. They also agree with the aesthetic principle of Japanese traditional art "yugen (profound grace and subtlety", which highly appreciates subtle emotional expressions in the darkness.

  9. Advanced flip chip packaging

    CERN Document Server

    Lai, Yi-Shao; Wong, CP

    2013-01-01

    Advanced Flip Chip Packaging presents past, present and future advances and trends in areas such as substrate technology, material development, and assembly processes. Flip chip packaging is now in widespread use in computing, communications, consumer and automotive electronics, and the demand for flip chip technology is continuing to grow in order to meet the need for products that offer better performance, are smaller, and are environmentally sustainable. This book also: Offers broad-ranging chapters with a focus on IC-package-system integration Provides viewpoints from leading industry executives and experts Details state-of-the-art achievements in process technologies and scientific research Presents a clear development history and touches on trends in the industry while also discussing up-to-date technology information Advanced Flip Chip Packaging is an ideal book for engineers, researchers, and graduate students interested in the field of flip chip packaging.

  10. Brightness masking is modulated by disparity structure.

    Science.gov (United States)

    Pelekanos, Vassilis; Ban, Hiroshi; Welchman, Andrew E

    2015-05-01

    The luminance contrast at the borders of a surface strongly influences surface's apparent brightness, as demonstrated by a number of classic visual illusions. Such phenomena are compatible with a propagation mechanism believed to spread contrast information from borders to the interior. This process is disrupted by masking, where the perceived brightness of a target is reduced by the brief presentation of a mask (Paradiso & Nakayama, 1991), but the exact visual stage that this happens remains unclear. In the present study, we examined whether brightness masking occurs at a monocular-, or a binocular-level of the visual hierarchy. We used backward masking, whereby a briefly presented target stimulus is disrupted by a mask coming soon afterwards, to show that brightness masking is affected by binocular stages of the visual processing. We manipulated the 3-D configurations (slant direction) of the target and mask and measured the differential disruption that masking causes on brightness estimation. We found that the masking effect was weaker when stimuli had a different slant. We suggest that brightness masking is partly mediated by mid-level neuronal mechanisms, at a stage where binocular disparity edge structure has been extracted. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

  11. A Masked Photocathode in a Photoinjector

    OpenAIRE

    Qiang, Ji

    2011-01-01

    In this paper, we propose a masked photocathode inside a photoinjector for generating high brightness electron beam. Instead of mounting the photocathode onto an electrode, an electrode with small hole is used as a mask to shield the photocathode from the accelerating vacuum chamber. Using such a masked photocathode will make the replacement of photocathode material easy by rotating the photocathode behind the electrode into the hole. Furthermore, this helps reduce the dark current or seconda...

  12. Medicaid CHIP ESPC Database

    Data.gov (United States)

    U.S. Department of Health & Human Services — The Environmental Scanning and Program Characteristic (ESPC) Database is in a Microsoft (MS) Access format and contains Medicaid and CHIP data, for the 50 states and...

  13. Predicting masking release of lateralized speech

    DEFF Research Database (Denmark)

    Chabot-Leclerc, Alexandre; MacDonald, Ewen; Dau, Torsten

    2016-01-01

    . The largest masking release (MR) was observed when all maskers were on the opposite side of the target. The data in the conditions containing only energetic masking and modulation masking could be accounted for using a binaural extension of the speech-based envelope power spectrum model [sEPSM; Jørgensen et...... al., 2013, J. Acoust. Soc. Am. 130], which uses a short-term equalization-cancellation process to model binaural unmasking. In the conditions where informational masking (IM) was involved, the predicted SRTs were lower than the measured values because the model is blind to confusions experienced...

  14. Massively-parallel FDTD simulations to address mask electromagnetic effects in hyper-NA immersion lithography

    Science.gov (United States)

    Tirapu Azpiroz, Jaione; Burr, Geoffrey W.; Rosenbluth, Alan E.; Hibbs, Michael

    2008-03-01

    In the Hyper-NA immersion lithography regime, the electromagnetic response of the reticle is known to deviate in a complicated manner from the idealized Thin-Mask-like behavior. Already, this is driving certain RET choices, such as the use of polarized illumination and the customization of reticle film stacks. Unfortunately, full 3-D electromagnetic mask simulations are computationally intensive. And while OPC-compatible mask electromagnetic field (EMF) models can offer a reasonable tradeoff between speed and accuracy for full-chip OPC applications, full understanding of these complex physical effects demands higher accuracy. Our paper describes recent advances in leveraging High Performance Computing as a critical step towards lithographic modeling of the full manufacturing process. In this paper, highly accurate full 3-D electromagnetic simulation of very large mask layouts are conducted in parallel with reasonable turnaround time, using a Blue- Gene/L supercomputer and a Finite-Difference Time-Domain (FDTD) code developed internally within IBM. A 3-D simulation of a large 2-D layout spanning 5μm×5μm at the wafer plane (and thus (20μm×20μm×0.5μm at the mask) results in a simulation with roughly 12.5GB of memory (grid size of 10nm at the mask, single-precision computation, about 30 bytes/grid point). FDTD is flexible and easily parallelizable to enable full simulations of such large layout in approximately an hour using one BlueGene/L "midplane" containing 512 dual-processor nodes with 256MB of memory per processor. Our scaling studies on BlueGene/L demonstrate that simulations up to 100μm × 100μm at the mask can be computed in a few hours. Finally, we will show that the use of a subcell technique permits accurate simulation of features smaller than the grid discretization, thus improving on the tradeoff between computational complexity and simulation accuracy. We demonstrate the correlation of the real and quadrature components that comprise the

  15. Set Size and Mask Duration Do Not Interact in Object-Substitution Masking

    Science.gov (United States)

    Argyropoulos, Ioannis; Gellatly, Angus; Pilling, Michael; Carter, Wakefield

    2013-01-01

    Object-substitution masking (OSM) occurs when a mask, such as four dots that surround a brief target item, onsets simultaneously with the target and offsets a short time after the target, rather than simultaneously with it. OSM is a reduction in accuracy of reporting the target with the temporally trailing mask, compared with the simultaneously…

  16. Assessment of molecular contamination in mask pod

    Science.gov (United States)

    Foray, Jean Marie; Dejaune, Patrice; Sergent, Pierre; Gough, Stuart; Cheung, D.; Davenet, Magali; Favre, Arnaud; Rude, C.; Trautmann, T.; Tissier, Michel; Fontaine, H.; Veillerot, M.; Avary, K.; Hollein, I.; Lerit, R.

    2008-04-01

    Context/ study Motivation: Contamination and especially Airbone Molecular Contamination (AMC) is a critical issue for mask material flow with a severe and fairly unpredictable risk of induced contamination and damages especially for 193 nm lithography. It is therefore essential to measure, to understand and then try to reduce AMC in mask environment. Mask material flow was studied in a global approach by a pool of European partners, especially within the frame of European MEDEA+ project, so called "MUSCLE". This paper deals with results and assessment of mask pod environment in term of molecular contamination in a first step, then in a second step preliminary studies to reduce mask pod influence and contamination due to material out gassing. Approach and techniques: A specific assessment of environmental / molecular contamination along the supply chain was performed by all partners. After previous work presented at EMLC 07, further studies were performed on real time contamination measurement pod at different sites locations (including Mask manufacturing site, blank manufacturing sites, IC fab). Studies were linked to the main critical issues: cleaning, storage, handling, materials and processes. Contamination measurement campaigns were carried out along the mask supply chain using specific Adixen analyzer in order to monitor in real time organic contaminants (ppb level) in mask pods. Key results would be presented: VOC, AMC and humidity level on different kinds of mask carriers, impact of basic cleaning on pod outgassing measurement (VOC, NH3), and process influence on pod contamination... In a second step, preliminary specific pod conditioning studies for better pod environment were performed based on Adixen vacuum process. Process influence had been experimentally measured in term of molecular outgassing from mask pods. Different AMC experimental characterization methods had been carried out leading to results on a wide range of organic and inorganic

  17. Shadows Alter Facial Expressions of Noh Masks

    Science.gov (United States)

    Kawai, Nobuyuki; Miyata, Hiromitsu; Nishimura, Ritsuko; Okanoya, Kazuo

    2013-01-01

    Background A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers’ recognition of the emotional expressions. Methodology/Principal Findings In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. Conclusions/Significance Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa’s smile. They also agree with the aesthetic principle of Japanese traditional art “yugen (profound grace and subtlety)”, which highly appreciates subtle emotional expressions in the darkness. PMID:23940748

  18. Fast mask writers: technology options and considerations

    Science.gov (United States)

    Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

    2011-04-01

    The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

  19. Automatic circuit analysis based on mask information

    International Nuclear Information System (INIS)

    Preas, B.T.; Lindsay, B.W.; Gwyn, C.W.

    1976-01-01

    The Circuit Mask Translator (CMAT) code has been developed which converts integrated circuit mask information into a circuit schematic. Logical operations, pattern recognition, and special functions are used to identify and interconnect diodes, transistors, capacitors, and resistances. The circuit topology provided by the translator is compatible with the input required for a circuit analysis program

  20. Fourier phasing with phase-uncertain mask

    International Nuclear Information System (INIS)

    Fannjiang, Albert; Liao, Wenjing

    2013-01-01

    Fourier phasing is the problem of retrieving Fourier phase information from Fourier intensity data. The standard Fourier phase retrieval (without a mask) is known to have many solutions which cause the standard phasing algorithms to stagnate and produce wrong or inaccurate solutions. In this paper Fourier phase retrieval is carried out with the introduction of a randomly fabricated mask in measurement and reconstruction. Highly probable uniqueness of solution, up to a global phase, was previously proved with exact knowledge of the mask. Here the uniqueness result is extended to the case where only rough information about the mask’s phases is assumed. The exponential probability bound for uniqueness is given in terms of the uncertainty-to-diversity ratio of the unknown mask. New phasing algorithms alternating between the object update and the mask update are systematically tested and demonstrated to have the capability of recovering both the object and the mask (within the object support) simultaneously, consistent with the uniqueness result. Phasing with a phase-uncertain mask is shown to be robust with respect to the correlation in the mask as well as the Gaussian and Poisson noises. (paper)

  1. Ipsilateral masking between acoustic and electric stimulations.

    Science.gov (United States)

    Lin, Payton; Turner, Christopher W; Gantz, Bruce J; Djalilian, Hamid R; Zeng, Fan-Gang

    2011-08-01

    Residual acoustic hearing can be preserved in the same ear following cochlear implantation with minimally traumatic surgical techniques and short-electrode arrays. The combined electric-acoustic stimulation significantly improves cochlear implant performance, particularly speech recognition in noise. The present study measures simultaneous masking by electric pulses on acoustic pure tones, or vice versa, to investigate electric-acoustic interactions and their underlying psychophysical mechanisms. Six subjects, with acoustic hearing preserved at low frequencies in their implanted ear, participated in the study. One subject had a fully inserted 24 mm Nucleus Freedom array and five subjects had Iowa/Nucleus hybrid implants that were only 10 mm in length. Electric masking data of the long-electrode subject showed that stimulation from the most apical electrodes produced threshold elevations over 10 dB for 500, 625, and 750 Hz probe tones, but no elevation for 125 and 250 Hz tones. On the contrary, electric stimulation did not produce any electric masking in the short-electrode subjects. In the acoustic masking experiment, 125-750 Hz pure tones were used to acoustically mask electric stimulation. The acoustic masking results showed that, independent of pure tone frequency, both long- and short-electrode subjects showed threshold elevations at apical and basal electrodes. The present results can be interpreted in terms of underlying physiological mechanisms related to either place-dependent peripheral masking or place-independent central masking.

  2. Computing Challenges in Coded Mask Imaging

    Science.gov (United States)

    Skinner, Gerald

    2009-01-01

    This slide presaentation reviews the complications and challenges in developing computer systems for Coded Mask Imaging telescopes. The coded mask technique is used when there is no other way to create the telescope, (i.e., when there are wide fields of view, high energies for focusing or low energies for the Compton/Tracker Techniques and very good angular resolution.) The coded mask telescope is described, and the mask is reviewed. The coded Masks for the INTErnational Gamma-Ray Astrophysics Laboratory (INTEGRAL) instruments are shown, and a chart showing the types of position sensitive detectors used for the coded mask telescopes is also reviewed. Slides describe the mechanism of recovering an image from the masked pattern. The correlation with the mask pattern is described. The Matrix approach is reviewed, and other approaches to image reconstruction are described. Included in the presentation is a review of the Energetic X-ray Imaging Survey Telescope (EXIST) / High Energy Telescope (HET), with information about the mission, the operation of the telescope, comparison of the EXIST/HET with the SWIFT/BAT and details of the design of the EXIST/HET.

  3. Masked hypertension, a review of the literature.

    NARCIS (Netherlands)

    Verberk, W.J.; Thien, Th.; Leeuw, P.W. de

    2007-01-01

    Masked hypertension (blood pressure that is normal in the physicians' office but elevated elsewhere) is a common phenomenon as prevalence among studies varies from 8 to 45% and is seen at all ages. large discrepancies, however, exist between studies that have dealt with masked hypertension. It is of

  4. Unmasking Zorro: functional importance of the facial mask in the Masked Shrike (Lanius nubicus)

    OpenAIRE

    Reuven Yosef; Piotr Zduniak; Piotr Tryjanowski

    2012-01-01

    The facial mask is a prominent feature in the animal kingdom. We hypothesized that the facial mask of shrikes allows them to hunt into the sun, which accords them detection and surprise-attack capabilities. We conducted a field experiment to determine whether the mask facilitated foraging while facing into the sun. Male shrikes with white-painted masks hunted facing away from the sun more than birds with black-painted masks, which are the natural color, and more than individuals in the contro...

  5. New data on masking reagents in complexometry

    International Nuclear Information System (INIS)

    Yurist, I.M.; Talmud, M.M.; Zajtsev, P.M.

    1985-01-01

    Recent literature data on employing inorganic and organic oxygen-, nitrogen- and sulfur-containing substances as masking reagents (MR) in complexonometry of alkali earths, rare earths and transition elements are reviewed for the period of 1971-1983. Effectiveness of any type of MR is shown to be dependent on the electron configuration of a cation being masked. Sr, La, Th, V(6), Zr, Hf, V(5), Nb(5), Ta(5), Mo(6), W(6) a.o. are masked by oxygen-containing ligands. Zn, Cd, Fe(2, 3), Co(2, 3), Ni, etc. are masked by nitrogen- and sulfur-bearing ligands. Thiocompounds mask mainly In, Tl(3), Sn(2), Pb, Bi

  6. Comparison of face masks in the bag-mask ventilation of a manikin.

    Science.gov (United States)

    Redfern, D; Rassam, S; Stacey, M R; Mecklenburgh, J S

    2006-02-01

    We conducted a study investigating the effectiveness of four face mask designs in the bag-mask ventilation of a special manikin adapted to simulate a difficult airway. Forty-eight anaesthetists volunteered to bag-mask ventilate the manikin for 3 min with four different face masks. The primary outcome of the study was to calculate mean percentage leak from the face masks over 3 min. Anaesthetists were also asked to rate the face masks using a visual analogue score. The single-use scented intersurgical face mask had the lowest mean leak (20%). This was significantly lower than the mean leak from the single-use, cushioned 7,000 series Air Safety Ltd. face mask (24%) and the reusable silicone Laerdal face mask (27%) but not significantly lower than the mean leak from the reusable anatomical intersurgical face mask (23%). There was a large variation in both performance and satisfaction between anaesthetists with each design. This highlights the importance of having a variety of face masks available for emergency use.

  7. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-08-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

  8. Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

    2013-12-02

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

  9. Nasal mask ventilation is better than face mask ventilation in edentulous patients.

    Science.gov (United States)

    Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

    2016-01-01

    Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients.

  10. Price of forest chips decreasing

    International Nuclear Information System (INIS)

    Hakkila, P.

    2001-01-01

    Use of forest chips was studied in 1999 in the national Puuenergia (Wood Energy) research program. Wood combusting heating plants were questioned about are the main reasons restricting the increment of the use of forest chips. Heating plants, which did not use forest chips at all or which used less than 250 m 3 (625 bulk- m 3 ) in 1999 were excluded. The main restrictions for additional use of forest chips were: too high price of forest chips; lack of suppliers and/or uncertainty of deliveries; technical problems of reception and processing of forest chips; insufficiency of boiler output especially in winter; and unsatisfactory quality of chips. The price of forest chips becomes relatively high because wood biomass used for production of forest chips has to be collected from wide area. Heavy equipment has to be used even though small fragments of wood are processed, which increases the price of chips. It is essential for forest chips that the costs can be pressed down because competition with fossil fuels, peat and industrial wood residues is hard. Low market price leads to the situation in which forest owner gets no price of the raw material, the entrepreneurs operate at the limit of profitability and renovation of machinery is difficult, and forest chips suppliers have to sell the chips at prime costs. Price of forest chips has decreased significantly during the past decade. Nominal price of forest chips is now lower than two decades ago. The real price of chips has decreased even more than the nominal price, 35% during the past decade and 20% during the last five years. Chips, made of small diameter wood, are expensive because the price includes the felling costs and harvesting is carried out at thinning lots. Price is especially high if chips are made of delimbed small diameter wood due to increased the work and reduced amount of chips. The price of logging residue chips is most profitable because cutting does not cause additional costs. Recovery of chips is

  11. Optimal selection of TLD chips

    International Nuclear Information System (INIS)

    Phung, P.; Nicoll, J.J.; Edmonds, P.; Paris, M.; Thompson, C.

    1996-01-01

    Large sets of TLD chips are often used to measure beam dose characteristics in radiotherapy. A sorting method is presented to allow optimal selection of chips from a chosen set. This method considers the variation

  12. Rapid manufacturing of low-noise membranes for nanopore sensors by trans-chip illumination lithography

    International Nuclear Information System (INIS)

    Janssen, Xander J A; Jonsson, Magnus P; Plesa, Calin; Soni, Gautam V; Dekker, Cees; Dekker, Nynke H

    2012-01-01

    In recent years, the concept of nanopore sensing has matured from a proof-of-principle method to a widespread, versatile technique for the study of biomolecular properties and interactions. While traditional nanopore devices based on a nanopore in a single layer membrane supported on a silicon chip can be rapidly fabricated using standard microfabrication methods, chips with additional insulating layers beyond the membrane region can provide significantly lower noise levels, but at the expense of requiring more costly and time-consuming fabrication steps. Here we present a novel fabrication protocol that overcomes this issue by enabling rapid and reproducible manufacturing of low-noise membranes for nanopore experiments. The fabrication protocol, termed trans-chip illumination lithography, is based on illuminating a membrane-containing wafer from its backside such that a photoresist (applied on the wafer’s top side) is exposed exclusively in the membrane regions. Trans-chip illumination lithography permits the local modification of membrane regions and hence the fabrication of nanopore chips containing locally patterned insulating layers. This is achieved while maintaining a well-defined area containing a single thin membrane for nanopore drilling. The trans-chip illumination lithography method achieves this without relying on separate masks, thereby eliminating time-consuming alignment steps as well as the need for a mask aligner. Using the presented approach, we demonstrate rapid and reproducible fabrication of nanopore chips that contain small (12 μm × 12 μm) free-standing silicon nitride membranes surrounded by insulating layers. The electrical noise characteristics of these nanopore chips are shown to be superior to those of simpler designs without insulating layers and comparable in quality to more complex designs that are more challenging to fabricate. (paper)

  13. An interactive tool for gamut masking

    Science.gov (United States)

    Song, Ying; Lau, Cheryl; Süsstrunk, Sabine

    2014-02-01

    Artists often want to change the colors of an image to achieve a particular aesthetic goal. For example, they might limit colors to a warm or cool color scheme to create an image with a certain mood or feeling. Gamut masking is a technique that artists use to limit the set of colors they can paint with. They draw a mask over a color wheel and only use the hues within the mask. However, creating the color palette from the mask and applying the colors to the image requires skill. We propose an interactive tool for gamut masking that allows amateur artists to create an image with a desired mood or feeling. Our system extracts a 3D color gamut from the 2D user-drawn mask and maps the image to this gamut. The user can draw a different gamut mask or locally refine the image colors. Our voxel grid gamut representation allows us to represent gamuts of any shape, and our cluster-based image representation allows the user to change colors locally.

  14. Reflective masks for extreme ultraviolet lithography

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Khanh Bao [Univ. of California, Berkeley, CA (United States)

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 μm wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  15. Effect of Ibuprofen on masking endodontic diagnosis.

    Science.gov (United States)

    Read, Jason K; McClanahan, Scott B; Khan, Asma A; Lunos, Scott; Bowles, Walter R

    2014-08-01

    An accurate diagnosis is of upmost importance before initiating endodontic treatment; yet, there are occasions when the practitioner cannot reproduce the patient's chief complaint because the patient has become asymptomatic. Ibuprofen taken beforehand may "mask" or eliminate the patient's symptoms. In fact, 64%-83% of patients with dental pain take analgesics before seeing a dentist. The purpose of this study was to examine the possible "masking" effect of ibuprofen on endodontic diagnostic tests. Forty-two patients with endodontic pain underwent testing (cold, percussion, palpation, and bite force measurement) and then received either placebo or 800 mg ibuprofen. Both patients and operators were blinded to the medication received. One hour later, diagnostic testing was repeated and compared with pretreatment testing. Ibuprofen affected testing values for vital teeth by masking palpation 40%, percussion 25%, and cold 25% on affected teeth with symptomatic irreversible pulpitis and symptomatic apical periodontitis. There was no observed masking effect in the placebo group on palpation, percussion, or cold values. When nonvital teeth were included, the masking effect of ibuprofen was decreased. However, little masking occurred with the bite force measurement differences. Analgesics taken before the dental appointment can affect endodontic diagnostic testing results. Bite force measurements can assist in identifying the offending tooth in cases in which analgesics "mask" the endodontic diagnosis. Copyright © 2014 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

  16. Smart vision chips: An overview

    Science.gov (United States)

    Koch, Christof

    1994-01-01

    This viewgraph presentation presents four working analog VLSI vision chips: (1) time-derivative retina, (2) zero-crossing chip, (3) resistive fuse, and (4) figure-ground chip; work in progress on computing motion and neuromorphic systems; and conceptual and practical lessons learned.

  17. Polymer Masks for nanostructuring of graphene

    DEFF Research Database (Denmark)

    Shvets, Violetta

    This PhD project is a part of Center for Nanostructured Graphene (CNG) activities. The aim of the project is to develop a new lithography method for creation of highly ordered nanostructures with as small as possible feature and period sizes. The method should be applicable for graphene nanostruc...... demonstrated the opening of what could be interpreted as a band gap....... polymer masks is developed. Mask fabrication is realized by microtoming of 30-60 nm thin sections from pre-aligned polymer monoliths with different morphologies. The resulting polymer masks are then transferred to both silicon and graphene substrates. Hexagonally packed hole patterns with 10 nm hole...

  18. When Bad Masks Turn Good

    Science.gov (United States)

    Abraham, Roberto G.

    In keeping with the spirit of a meeting on ‘masks,' this talk presents two short stories on the theme of dust. In the first, dust plays the familiar role of the evil obscurer, the enemy to bedefeated by the cunning observer in order to allow a key future technology (adaptive optics) to be exploited fully by heroic astronomers. In the second story, dust itself emerges as the improbable hero, in the form of a circumstellar debris disks. I will present evidence of a puzzling near-infrared excess in the continuum of high-redshift galaxies and will argue that the seemingly improbable origin of this IR excess is a population of young circumstellar disks formed around high-mass stars in distant galaxies. Assuming circumstellar disks extend down to lower masses,as they do in our own Galaxy, the excess emission presents us with an exciting opportunity to measure the formation rate of planetary systems in distant galaxies at cosmic epochs before our own solar system formed.

  19. SPAD array chips with full frame readout for crystal characterization

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, Peter; Blanco, Roberto; Sacco, Ilaria; Ritzert, Michael [Heidelberg University (Germany); Weyers, Sascha [Fraunhofer Institute for Microelectronic Circuits and Systems (Germany)

    2015-05-18

    We present single photon sensitive 2D camera chips containing 88x88 avalanche photo diodes which can be read out in full frame mode with up to 400.000 frames per second. The sensors have an imaging area of ~5mm x 5mm covered by square pixels of ~56µm x 56µm with a ~55% fill factor in the latest chip generation. The chips contain a self triggering logic with selectable (column) multiplicities of up to >=4 hits within an adjustable coincidence time window. The photon accumulation time window is programmable as well. First prototypes have demonstrated low dark count rates of <50kHz/mm2 (SPAD area) at 10 degree C for 10% masked pixels. One chip version contains an automated readout of the photon cluster position. The readout of the detailed photon distribution for single events allows the characterization of light sharing, optical crosstalk etc., in crystals or crystal arrays as they are used in PET instrumentation. This knowledge could lead to improvements in spatial or temporal resolution.

  20. Evaluation of Criteria to Detect Masked Hypertension

    Science.gov (United States)

    Booth, John N.; Muntner, Paul; Diaz, Keith M.; Viera, Anthony J.; Bello, Natalie A.; Schwartz, Joseph E.; Shimbo, Daichi

    2016-01-01

    The prevalence of masked hypertension, out-of-clinic daytime systolic/diastolic blood pressure (SBP/DBP)≥135/85 mmHg on ambulatory blood pressure monitoring (ABPM) among adults with clinic SBP/DBPABPM testing criterion. In a derivation cohort (n=695), the index was clinic SBP+1.3*clinic DBP. In an external validation cohort (n=675), the sensitivity for masked hypertension using an index ≥190 mmHg and ≥217 mmHg and prehypertension status was 98.5%, 71.5% and 82.5%, respectively. Using NHANES data (n=11,778), we estimated that these thresholds would refer 118.6, 44.4 and 59.3 million US adults, respectively, to ABPM screening for masked hypertension. In conclusion, the CBP index provides a useful approach to identify candidates for masked hypertension screening using ABPM. PMID:27126770

  1. Active mask segmentation of fluorescence microscope images.

    Science.gov (United States)

    Srinivasa, Gowri; Fickus, Matthew C; Guo, Yusong; Linstedt, Adam D; Kovacević, Jelena

    2009-08-01

    We propose a new active mask algorithm for the segmentation of fluorescence microscope images of punctate patterns. It combines the (a) flexibility offered by active-contour methods, (b) speed offered by multiresolution methods, (c) smoothing offered by multiscale methods, and (d) statistical modeling offered by region-growing methods into a fast and accurate segmentation tool. The framework moves from the idea of the "contour" to that of "inside and outside," or masks, allowing for easy multidimensional segmentation. It adapts to the topology of the image through the use of multiple masks. The algorithm is almost invariant under initialization, allowing for random initialization, and uses a few easily tunable parameters. Experiments show that the active mask algorithm matches the ground truth well and outperforms the algorithm widely used in fluorescence microscopy, seeded watershed, both qualitatively, as well as quantitatively.

  2. Masking of aluminum surface against anodizing

    Science.gov (United States)

    Crawford, G. B.; Thompson, R. E.

    1969-01-01

    Masking material and a thickening agent preserve limited unanodized areas when aluminum surfaces are anodized with chromic acid. For protection of large areas it combines well with a certain self-adhesive plastic tape.

  3. Mask-induced aberration in EUV lithography

    Science.gov (United States)

    Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

    2009-04-01

    We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

  4. Nablus mask-like facial syndrome

    DEFF Research Database (Denmark)

    Allanson, Judith; Smith, Amanda; Hare, Heather

    2012-01-01

    Nablus mask-like facial syndrome (NMLFS) has many distinctive phenotypic features, particularly tight glistening skin with reduced facial expression, blepharophimosis, telecanthus, bulky nasal tip, abnormal external ear architecture, upswept frontal hairline, and sparse eyebrows. Over the last few...

  5. The fastest saccadic responses escape visual masking

    DEFF Research Database (Denmark)

    Crouzet, Sébastien M.; Overgaard, Morten; Busch, Niko A.

    2014-01-01

    Object-substitution masking (OSM) occurs when a briefly presented target in a search array is surrounded by small dots that remain visible after the target disappears. The reduction of target visibility occurring after OSM has been suggested to result from a specific interference with reentrant......, which gives access to very early stages of visual processing, target visibility was reduced either by OSM, conventional backward masking, or low stimulus contrast. A general reduction of performance was observed in all three conditions. However, the fastest saccades did not show any sign of interference...... under either OSM or backward masking, as they did under the low-contrast condition. This finding supports the hypothesis that masking interferes mostly with reentrant processing at later stages, while leaving early feedforward processing largely intact....

  6. Attentional capture by masked colour singletons.

    Science.gov (United States)

    Ansorge, Ulrich; Horstmann, Gernot; Worschech, Franziska

    2010-09-15

    We tested under which conditions a colour singleton of which an observer is unaware captures attention. To prevent visual awareness of the colour singleton, we used backward masking. We find that a masked colour singleton cue captures attention if it matches the observer's goal to search for target colours but not if it is task-irrelevant. This is also reflected in event-related potentials to the visible target: the masked goal-matching cue elicits an attentional potential (N2pc) in a target search task. By contrast, a non-matching but equally strong masked colour singleton cue failed to elicit a capture effect and an N2pc. Results are discussed with regard to currently pertaining conceptions of attentional capture by colour singletons. Copyright 2010 Elsevier Ltd. All rights reserved.

  7. Design of Data Masking Architecture and Analysis of Data Masking Techniques for Testing

    OpenAIRE

    Ravikumar G K,; Manjunath T. N,; Ravindra S. Hegadi,; Archana.R.A

    2011-01-01

    Data masking is the process of obscuring-masking, specific data elements within data stores. It ensures that sensitive data is replaced with realistic but not real data. The goal is that sensitive customer information is not available outside of the authorized environment. Data masking is typically done while provisioning nonproduction environments so that copies created to support test and development processes are not exposing sensitive information and thus avoiding risks of leaking. Maskin...

  8. Effects of hard mask etch on final topography of advanced phase shift masks

    Science.gov (United States)

    Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

    2017-07-01

    Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

  9. Active Mask Segmentation of Fluorescence Microscope Images

    OpenAIRE

    Srinivasa, Gowri; Fickus, Matthew C.; Guo, Yusong; Linstedt, Adam D.; Kovačević, Jelena

    2009-01-01

    We propose a new active mask algorithm for the segmentation of fluorescence microscope images of punctate patterns. It combines the (a) flexibility offered by active-contour methods, (b) speed offered by multiresolution methods, (c) smoothing offered by multiscale methods, and (d) statistical modeling offered by region-growing methods into a fast and accurate segmentation tool. The framework moves from the idea of the “contour” to that of “inside and outside”, or, masks, allowing for easy mul...

  10. Refinement of the CALIOP cloud mask algorithm

    Science.gov (United States)

    Katagiri, Shuichiro; Sato, Kaori; Ohta, Kohei; Okamoto, Hajime

    2018-04-01

    A modified cloud mask algorithm was applied to the CALIOP data to have more ability to detect the clouds in the lower atmosphere. In this algorithm, we also adopt the fully attenuation discrimination and the remain noise estimation using the data obtained at an altitude of 40 km to avoid contamination of stratospheric aerosols. The new cloud mask shows an increase in the lower cloud fraction. Comparison of the results to the data observed with a PML ground observation was also made.

  11. Masked Uncontrolled Hypertension in CKD.

    Science.gov (United States)

    Agarwal, Rajiv; Pappas, Maria K; Sinha, Arjun D

    2016-03-01

    Masked uncontrolled hypertension (MUCH) is diagnosed in patients treated for hypertension who are normotensive in the clinic but hypertensive outside. In this study of 333 veterans with CKD, we prospectively evaluated the prevalence of MUCH as determined by ambulatory BP monitoring using three definitions of hypertension (daytime hypertension ≥135/85 mmHg; either nighttime hypertension ≥120/70 mmHg or daytime hypertension; and 24-hour hypertension ≥130/80 mmHg) or by home BP monitoring (hypertension ≥135/85 mmHg). The prevalence of MUCH was 26.7% by daytime ambulatory BP, 32.8% by 24-hour ambulatory BP, 56.1% by daytime or night-time ambulatory BP, and 50.8% by home BP. To assess the reproducibility of the diagnosis, we repeated these measurements after 4 weeks. Agreement in MUCH diagnosis by ambulatory BP was 75-78% (κ coefficient for agreement, 0.44-0.51), depending on the definition used. In contrast, home BP showed an agreement of only 63% and a κ coefficient of 0.25. Prevalence of MUCH increased with increasing clinic systolic BP: 2% in the 90-110 mmHg group, 17% in the 110-119 mmHg group, 34% in the 120-129 mmHg group, and 66% in the 130-139 mmHg group. Clinic BP was a good determinant of MUCH (receiver operating characteristic area under the curve 0.82; 95% confidence interval 0.76-0.87). In diagnosing MUCH, home BP was not different from clinic BP. In conclusion, among people with CKD, MUCH is common and reproducible, and should be suspected when clinic BP is in the prehypertensive range. Confirmation of MUCH diagnosis should rely on ambulatory BP monitoring. Copyright © 2016 by the American Society of Nephrology.

  12. Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

    Science.gov (United States)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2013-04-01

    As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of

  13. Masking Period Patterns & Forward Masking for Speech-Shaped Noise: Age-related effects

    Science.gov (United States)

    Grose, John H.; Menezes, Denise C.; Porter, Heather L.; Griz, Silvana

    2015-01-01

    Objective The purpose of this study was to assess age-related changes in temporal resolution in listeners with relatively normal audiograms. The hypothesis was that increased susceptibility to non-simultaneous masking contributes to the hearing difficulties experienced by older listeners in complex fluctuating backgrounds. Design Participants included younger (n = 11), middle-aged (n = 12), and older (n = 11) listeners with relatively normal audiograms. The first phase of the study measured masking period patterns for speech-shaped noise maskers and signals. From these data, temporal window shapes were derived. The second phase measured forward-masking functions, and assessed how well the temporal window fits accounted for these data. Results The masking period patterns demonstrated increased susceptibility to backward masking in the older listeners, compatible with a more symmetric temporal window in this group. The forward-masking functions exhibited an age-related decline in recovery to baseline thresholds, and there was also an increase in the variability of the temporal window fits to these data. Conclusions This study demonstrated an age-related increase in susceptibility to non-simultaneous masking, supporting the hypothesis that exacerbated non-simultaneous masking contributes to age-related difficulties understanding speech in fluctuating noise. Further support for this hypothesis comes from limited speech-in-noise data suggesting an association between susceptibility to forward masking and speech understanding in modulated noise. PMID:26230495

  14. Modulation cues influence binaural masking-level difference in masking-pattern experiments.

    Science.gov (United States)

    Nitschmann, Marc; Verhey, Jesko L

    2012-03-01

    Binaural masking patterns show a steep decrease in the binaural masking-level difference (BMLD) when masker and signal have no frequency component in common. Experimental threshold data are presented together with model simulations for a diotic masker centered at 250 or 500 Hz and a bandwidth of 10 or 100 Hz masking a sinusoid interaurally in phase (S(0)) or in antiphase (S(π)). Simulations with a binaural model, including a modulation filterbank for the monaural analysis, indicate that a large portion of the decrease in the BMLD in remote-masking conditions may be due to an additional modulation cue available for monaural detection. © 2012 Acoustical Society of America

  15. Masking Period Patterns and Forward Masking for Speech-Shaped Noise: Age-Related Effects.

    Science.gov (United States)

    Grose, John H; Menezes, Denise C; Porter, Heather L; Griz, Silvana

    2016-01-01

    The purpose of this study was to assess age-related changes in temporal resolution in listeners with relatively normal audiograms. The hypothesis was that increased susceptibility to nonsimultaneous masking contributes to the hearing difficulties experienced by older listeners in complex fluctuating backgrounds. Participants included younger (n = 11), middle-age (n = 12), and older (n = 11) listeners with relatively normal audiograms. The first phase of the study measured masking period patterns for speech-shaped noise maskers and signals. From these data, temporal window shapes were derived. The second phase measured forward-masking functions and assessed how well the temporal window fits accounted for these data. The masking period patterns demonstrated increased susceptibility to backward masking in the older listeners, compatible with a more symmetric temporal window in this group. The forward-masking functions exhibited an age-related decline in recovery to baseline thresholds, and there was also an increase in the variability of the temporal window fits to these data. This study demonstrated an age-related increase in susceptibility to nonsimultaneous masking, supporting the hypothesis that exacerbated nonsimultaneous masking contributes to age-related difficulties understanding speech in fluctuating noise. Further support for this hypothesis comes from limited speech-in-noise data, suggesting an association between susceptibility to forward masking and speech understanding in modulated noise.

  16. Supreme Laryngeal Mask Airway versus Face Mask during Neonatal Resuscitation: A Randomized Controlled Trial.

    Science.gov (United States)

    Trevisanuto, Daniele; Cavallin, Francesco; Nguyen, Loi Ngoc; Nguyen, Tien Viet; Tran, Linh Dieu; Tran, Chien Dinh; Doglioni, Nicoletta; Micaglio, Massimo; Moccia, Luciano

    2015-08-01

    To assess the effectiveness of supreme laryngeal mask airway (SLMA) over face mask ventilation for preventing need for endotracheal intubation at birth. We report a prospective, randomized, parallel 1:1, unblinded, controlled trial. After a short-term educational intervention on SLMA use, infants ≥34-week gestation and/or expected birth weight ≥1500 g requiring positive pressure ventilation (PPV) at birth were randomized to resuscitation by SLMA or face mask. The primary outcome was the success rate of the resuscitation devices (SLMA or face mask) defined as the achievement of an effective PPV preventing the need for endotracheal intubation. We enrolled 142 patients (71 in SLMA and 71 in face mask group, respectively). Successful resuscitation rate was significantly higher with the SLMA compared with face mask ventilation (91.5% vs 78.9%; P = .03). Apgar score at 5 minutes was significantly higher in SLMA than in face mask group (P = .02). Neonatal intensive care unit admission rate was significantly lower in SLMA than in face mask group (P = .02). No complications related to the procedure occurred. In newborns with gestational age ≥34 weeks and/or expected birth weight ≥1500 g needing PPV at birth, the SLMA is more effective than face mask to prevent endotracheal intubation. The SLMA is effective in clinical practice after a short-term educational intervention. Registered with ClinicalTrials.gov: NCT01963936. Copyright © 2015 Elsevier Inc. All rights reserved.

  17. Phase mask coronagraphy at JPL and Palomar

    Directory of Open Access Journals (Sweden)

    Serabyn E.

    2011-07-01

    Full Text Available For the imaging of faint companions, phase mask coronagraphy has the dual advantages of a small inner working angle and high throughput. This paper summarizes our recent work in developing phase masks and in demonstrating their capabilities at JPL. Four-quadrant phase masks have been manufactured at JPL by means of both evaporation and etching, and we have been developing liquid crystal vortex phase masks in partnership with a commercial vendor. Both types of mask have been used with our extreme adaptive optics well-corrected subaperture at Palomar to detect known brown dwarf companions as close as ~ 2.5 λ/D to stars. Moreover, our recent vortex masks perform very well in laboratory tests, with a demonstrated infrared contrast of about 10−6 at 3 λ/D, and contrasts of a few 10−7 with an initial optical wavelength device. The demonstrated performance already meets the needs of ground-based extreme adaptive optics coronagraphy, and further planned improvements are aimed at reaching the 10−10 contrast needed for terrestrial exoplanet detection with a space-based coronagraph.

  18. Conceptual Masking: How One Picture Captures Attention from Another Picture.

    Science.gov (United States)

    Loftus, Geoffrey R.; And Others

    1988-01-01

    Five experiments studied operations of conceptual masking--the reduction of conceptual memory performance for an initial stimulus when it is followed by a masking picture process. The subjects were 337 undergraduates at the University of Washington (Seattle). Conceptual masking is distinguished from perceptual masking. (TJH)

  19. Analysis and test of laws for backward (metacontrast) masking

    NARCIS (Netherlands)

    Francis, G.; Rothmayer, M.; Hermens, F.

    2004-01-01

    In backward visual masking, it is common to find that the mask has its biggest effect when it follows the target by several tens of milliseconds. Research in the 1960s and 1970s suggested that masking effects were best characterized by the stimulus onset asynchrony (SOA) between the target and mask.

  20. Orientation tuning of contrast masking caused by motion streaks.

    Science.gov (United States)

    Apthorp, Deborah; Cass, John; Alais, David

    2010-08-01

    We investigated whether the oriented trails of blur left by fast-moving dots (i.e., "motion streaks") effectively mask grating targets. Using a classic overlay masking paradigm, we varied mask contrast and target orientation to reveal underlying tuning. Fast-moving Gaussian blob arrays elevated thresholds for detection of static gratings, both monoptically and dichoptically. Monoptic masking at high mask (i.e., streak) contrasts is tuned for orientation and exhibits a similar bandwidth to masking functions obtained with grating stimuli (∼30 degrees). Dichoptic masking fails to show reliable orientation-tuned masking, but dichoptic masks at very low contrast produce a narrowly tuned facilitation (∼17 degrees). For iso-oriented streak masks and grating targets, we also explored masking as a function of mask contrast. Interestingly, dichoptic masking shows a classic "dipper"-like TVC function, whereas monoptic masking shows no dip and a steeper "handle". There is a very strong unoriented component to the masking, which we attribute to transiently biased temporal frequency masking. Fourier analysis of "motion streak" images shows interesting differences between dichoptic and monoptic functions and the information in the stimulus. Our data add weight to the growing body of evidence that the oriented blur of motion streaks contributes to the processing of fast motion signals.

  1. 37 CFR 211.3 - Mask work fees.

    Science.gov (United States)

    2010-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2010-07-01 2010-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b) Section...

  2. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Science.gov (United States)

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Gas mask containers; minimum requirements. 84.117... SAFETY AND HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial...

  3. 21 CFR 868.5560 - Gas mask head strap.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Gas mask head strap. 868.5560 Section 868.5560...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5560 Gas mask head strap. (a) Identification. A gas mask head strap is a device used to hold an anesthetic gas mask in position on a patient's...

  4. Preservation of forest wood chips

    Energy Technology Data Exchange (ETDEWEB)

    Kofman, P.D.; Thomsen, I.M.; Ohlsson, C.; Leer, E.; Ravn Schmidt, E.; Soerensen, M.; Knudsen, P.

    1999-01-01

    As part of the Danish Energy Research Programme on biomass utilisation for energy production (EFP), this project concerns problems connected to the handling and storing of wood chips. In this project, the possibility of preserving wood chips of the Norway Spruce (Picea Abies) is addressed, and the potential improvements by anaerobic storage are tested. Preservation of wood chips aims at reducing dry matter losses from extensive heating during storage and to reduce production of fungal spores. Fungal spores pose a health hazards to workers handling the chips. Further the producers of wood chips are interested in such a method since it would enable them to give a guarantee for the delivery of homogeneous wood chips also during the winter period. Three different types of wood chips were stored airtight and further one of these was stored in accordance with normal practise and use as reference. The results showed that airtight storage had a beneficial impact on the quality of the chips: no redistribution of moisture, low dry matter losses, unfavourable conditions for microbial activity of most fungi, and the promotion of yeasts instead of fungi with airborne spores. Likewise the firing tests showed that no combustion problems, and no increased risk to the environment or to the health of staff is caused by anaerobic storage of wood chips. In all, the tests of the anaerobic storage method of forest wood chips were a success and a large-scale test of the method will be carried out in 1999. (au)

  5. Alternative method for variable aspect ratio vias using a vortex mask

    Science.gov (United States)

    Schepis, Anthony R.; Levinson, Zac; Burbine, Andrew; Smith, Bruce W.

    2014-03-01

    Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend are aggressive reductions in memory cell sizes that have resulted in systems with diminishing area between bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area and complex aerial image. To accommodate these trends, semiconductor device design has shifted toward the implementation of elliptical contact features. This empowers designers to maximize the use of free device space, preserving contact area and effectively reducing the via dimension just along a single axis. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. Vortex masks, characterized by their helically induced propagation of light and consequent dark core, afford great potential for the patterning of such features when coupled with a high resolution negative tone resist system. This study investigates the integration of a vortex mask in a 193nm immersion (193i) lithography system and qualifies its ability to augment aspect ratio through feature density using aerial image vector simulation. It was found that vortex fabricated vias provide a distinct resolution advantage over traditionally patterned contact features employing a 6% attenuated phase shift mask (APM). 1:1 features were resolvable at 110nm pitch with a 38nm critical dimension (CD) and 110nm depth of focus (DOF) at 10% exposure latitude (EL). Furthermore, iterative source-mask optimization was executed as means to augment aspect ratio. By employing mask asymmetries and directionally biased sources aspect ratios ranging between 1:1 and 2:1 were achievable, however, this

  6. Amdahl 470 Chip Package

    CERN Multimedia

    1975-01-01

    In the late 70s the larger IBM computers were water cooled. Amdahl, an IBM competitor, invented an air cooling technology for it's computers. His company worked hard, developing a computer that was faster and less expensive than the IBM System/360 mainframe computer systems. This object contains an actual Amdahl series 470 computer logic chip with an air cooling device mounted on top. The package leads and cooling tower are gold-plated.

  7. Perception of Scary Halloween Masks by Zoo Animals and Humans

    OpenAIRE

    Sinnott, Joan M.; Speaker, H. Anton; Powell, Laura A.; Mosteller, Kelly W.

    2012-01-01

    Zoo animals were tested to see if they perceived the scary nature of Halloween masks, using a procedure that measured the avoidance response latency to take food from a masked human experimenter. Human perception of the masks was also assessed using a rating scale, with results showing that a Bill Clinton mask was rated not scary, while a Vampire mask was rated very scary. Animal results showed that primate latencies correlated significantly with the human ratings, while non-primate latencies...

  8. Silicon Chip-to-Chip Mode-Division Multiplexing

    DEFF Research Database (Denmark)

    Baumann, Jan Markus; Porto da Silva, Edson; Ding, Yunhong

    2018-01-01

    A chip-to-chip mode-division multiplexing connection is demonstrated using a pair of multiplexers/demultiplexers fabricated on the silicon-on-insulator platform. Successful mode multiplexing and demultiplexing is experimentally demonstrated, using the LP01, LP11a and LP11b modes.......A chip-to-chip mode-division multiplexing connection is demonstrated using a pair of multiplexers/demultiplexers fabricated on the silicon-on-insulator platform. Successful mode multiplexing and demultiplexing is experimentally demonstrated, using the LP01, LP11a and LP11b modes....

  9. Simultaneous pure-tone masking : the dependence of masking asymmetries on intensity

    NARCIS (Netherlands)

    Vogten, L.L.M.

    1978-01-01

    Phase locking between probe and masker was used in a series of pure-tone masking experiments. The masker was a stationary sine wave of variable frequency; the probe a fixed-frequency tone burst. We have observed that for small frequency separation the masking behaves asymmetrically around the probe

  10. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  11. [Recognition of visual objects under forward masking. Effects of cathegorial similarity of test and masking stimuli].

    Science.gov (United States)

    Gerasimenko, N Iu; Slavutskaia, A V; Kalinin, S A; Kulikov, M A; Mikhaĭlova, E S

    2013-01-01

    In 38 healthy subjects accuracy and response time were examined during recognition of two categories of images--animals andnonliving objects--under forward masking. We revealed new data that masking effects depended of categorical similarity of target and masking stimuli. The recognition accuracy was the lowest and the response time was the most slow, when the target and masking stimuli belongs to the same category, that was combined with high dispersion of response times. The revealed effects were more clear in the task of animal recognition in comparison with the recognition of nonliving objects. We supposed that the revealed effects connected with interference between cortical representations of the target and masking stimuli and discussed our results in context of cortical interference and negative priming.

  12. Endogenous cueing attenuates object substitution masking.

    Science.gov (United States)

    Germeys, Filip; Pomianowska, I; De Graef, P; Zaenen, P; Verfaillie, K

    2010-07-01

    Object substitution masking (OSM) is a form of visual masking in which a briefly presented target surrounded by four small dots is masked by the continuing presence of the four dots after target offset. A major parameter in the prediction of OSM is the time required for attention to be directed to the target following its onset. Object substitution theory (Di Lollo et al. in J Exp Psychol Gen 129:481-507, 2000) predicts that the sooner attention can be focused at the target's location, the less masking will ensue. However, recently Luiga and Bachmann (Psychol Res 71:634-640, 2007) presented evidence that precueing of attention to the target location prior to target-plus-mask onset by means of a central (endogenous) arrow cue does not reduce OSM. When attention was cued exogenously, OSM was attenuated. Based on these results, Luiga and Bachmann argued that object substitution theory should be adapted by differentiating the ways of directing attention to the target location. The goal of the present study was to further examine the dissociation between the effects of endogenous and exogenous precueing on OSM. Contrary to Luiga and Bachmann, our results show that prior shifts of attention to the target location initiated by both exogenous and endogenous cues reduce OSM as predicted by object substitution theory and its computational model CMOS.

  13. EUV mask process specifics and development challenges

    Science.gov (United States)

    Nesladek, Pavel

    2014-07-01

    EUV lithography is currently the favorite and most promising candidate among the next generation lithography (NGL) technologies. Decade ago the NGL was supposed to be used for 45 nm technology node. Due to introduction of immersion 193nm lithography, double/triple patterning and further techniques, the 193 nm lithography capabilities was greatly improved, so it is expected to be used successfully depending on business decision of the end user down to 10 nm logic. Subsequent technology node will require EUV or DSA alternative technology. Manufacturing and especially process development for EUV technology requires significant number of unique processes, in several cases performed at dedicated tools. Currently several of these tools as e.g. EUV AIMS or actinic reflectometer are not available on site yet. The process development is done using external services /tools with impact on the single unit process development timeline and the uncertainty of the process performance estimation, therefore compromises in process development, caused by assumption about similarities between optical and EUV mask made in experiment planning and omitting of tests are further reasons for challenges to unit process development. Increased defect risk and uncertainty in process qualification are just two examples, which can impact mask quality / process development. The aim of this paper is to identify critical aspects of the EUV mask manufacturing with respect to defects on the mask with focus on mask cleaning and defect repair and discuss the impact of the EUV specific requirements on the experiments needed.

  14. Improved Mask Protected DES using RSA Algorithm

    Directory of Open Access Journals (Sweden)

    Asha Latha S.

    2016-01-01

    Full Text Available The data encryption standard is a pioneering and farsighted standard which helped to set a new paradigm for encryption standards. But now DES is considered to be insecure for some application. Asymmetric mask protected DES is an advanced encryption method for effectively protecting the advanced DES. There are still probabilities to improve its security. This paper propose a method, which introduce a RSA key generation scheme in mask protected DES instead of plain key, which result in enhancement in the security of present asymmetric mask protected DES. We further propose a Vedic mathematical method of RSA implementation which reduce the complexity of computation in RSA block thereby resulting in reduced delay (four timesthat improves the performance of overall system. The software implementation was performed using Xilinx 13.2 and Model-Sim was used for the simulation environment.

  15. Pattern transfer with stabilized nanoparticle etch masks

    International Nuclear Information System (INIS)

    Hogg, Charles R; Majetich, Sara A; Picard, Yoosuf N; Narasimhan, Amrit; Bain, James A

    2013-01-01

    Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO x substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results. (paper)

  16. Counteracting Power Analysis Attacks by Masking

    Science.gov (United States)

    Oswald, Elisabeth; Mangard, Stefan

    The publication of power analysis attacks [12] has triggered a lot of research activities. On the one hand these activities have been dedicated toward the development of secure and efficient countermeasures. On the other hand also new and improved attacks have been developed. In fact, there has been a continuous arms race between designers of countermeasures and attackers. This chapter provides a brief overview of the state-of-the art in the arms race in the context of a countermeasure called masking. Masking is a popular countermeasure that has been extensively discussed in the scientific community. Numerous articles have been published that explain different types of masking and that analyze weaknesses of this countermeasure.

  17. Effect of mask dead space and occlusion of mask holes on delivery of nebulized albuterol.

    Science.gov (United States)

    Berlinski, Ariel

    2014-08-01

    Infants and children with respiratory conditions are often prescribed bronchodilators. Face masks are used to facilitate the administration of nebulized therapy in patients unable to use a mouthpiece. Masks incorporate holes into their design, and their occlusion during aerosol delivery has been a common practice. Masks are available in different sizes and different dead volumes. The aim of this study was to compare the effect of different degrees of occlusion of the mask holes and different mask dead space on the amount of nebulized albuterol available at the mouth opening in a model of a spontaneously breathing child. A breathing simulator mimicking infant (tidal volume [VT] = 50 mL, breathing frequency = 30 breaths/min, inspiratory-expiratory ratio [I:E] = 1:3), child (VT = 155 mL, breathing frequency = 25 breaths/min, I:E = 1:2), and adult (VT = 500 mL, breathing frequency = 15 breaths/min, I:E = 1:2) breathing patterns was connected to a collection filter hidden behind a face plate. A pediatric size mask and an adult size mask connected to a continuous output jet nebulizer were sealed to the face plate. Three nebulizers were loaded with albuterol sulfate (2.5 mg/3 mL) and operated with 6 L/min compressed air for 5 min. Experiments were repeated with different degrees of occlusion (0%, 50%, and 90%). Albuterol was extracted from the filter and measured with a spectrophotometer at 276 nm. Occlusion of the holes in the large mask did not increase the amount of albuterol in any of the breathing patterns. The amount of albuterol captured at the mouth opening did not change when the small mask was switched to the large mask, except with the breathing pattern of a child, and when the holes in the mask were 50% occluded (P = .02). Neither decreasing the dead space of the mask nor occluding the mask holes increased the amount of nebulized albuterol captured at the mouth opening.

  18. Individual differences in metacontrast masking regarding sensitivity and response bias.

    Science.gov (United States)

    Albrecht, Thorsten; Mattler, Uwe

    2012-09-01

    In metacontrast masking target visibility is modulated by the time until a masking stimulus appears. The effect of this temporal delay differs across participants in such a way that individual human observers' performance shows distinguishable types of masking functions which remain largely unchanged for months. Here we examined whether individual differences in masking functions depend on different response criteria in addition to differences in discrimination sensitivity. To this end we reanalyzed previously published data and conducted a new experiment for further data analyses. Our analyses demonstrate that a distinction of masking functions based on the type of masking stimulus is superior to a distinction based on the target-mask congruency. Individually different masking functions are based on individual differences in discrimination sensitivities and in response criteria. Results suggest that individual differences in metacontrast masking result from individually different criterion contents. Copyright © 2012 Elsevier Inc. All rights reserved.

  19. Design of TOPAZ masking system using EGS4

    International Nuclear Information System (INIS)

    Uno, Shoji

    1991-01-01

    There are two sources of the beam background in the e + e - collider experiments. One source is the synchrotron radiation from many magnets. Another source comes from the spent-electron hitting the beam pipe near the interaction region. To reduce the these background, TOPAZ masking system was designed using EGS4 code. The designed masking system consists of two pairs of masks which are called mask-1 and mask-2. The mask-1 is placed to intercept the spent-electron. The aperture of the mask-2 was determined for the synchrotron radiation photons not to hit the mask-1 directly. After these masks were installed, we are taking the data in the small beam background. (author)

  20. Metacontrast masking is processed before grapheme-color synesthesia.

    Science.gov (United States)

    Bacon, Michael Patrick; Bridgeman, Bruce; Ramachandran, Vilayanur S

    2013-01-01

    We investigated the physiological mechanism of grapheme-color synesthesia using metacontrast masking. A metacontrast target is rendered invisible by a mask that is delayed by about 60 ms; the target and mask do not overlap in space or time. Little masking occurs, however, if the target and mask are simultaneous. This effect must be cortical, because it can be obtained dichoptically. To compare the data for synesthetes and controls, we developed a metacontrast design in which nonsynesthete controls showed weaker dichromatic masking (i.e., the target and mask were in different colors) than monochromatic masking. We accomplished this with an equiluminant target, mask, and background for each observer. If synesthetic color affected metacontrast, synesthetes should show monochromatic masking more similar to the weak dichromatic masking among controls, because synesthetes could add their synesthetic color to the monochromatic condition. The target-mask pairs used for each synesthete were graphemes that elicited strong synesthetic colors. We found stronger monochromatic than dichromatic U-shaped metacontrast for both synesthetes and controls, with optimal masking at an asynchrony of 66 ms. The difference in performance between the monochromatic and dichromatic conditions in the synesthetes indicates that synesthesia occurs at a later processing stage than does metacontrast masking.

  1. Lensless digital holography with diffuse illumination through a pseudo-random phase mask.

    Science.gov (United States)

    Bernet, Stefan; Harm, Walter; Jesacher, Alexander; Ritsch-Marte, Monika

    2011-12-05

    Microscopic imaging with a setup consisting of a pseudo-random phase mask, and an open CMOS camera, without an imaging objective, is demonstrated. The pseudo random phase mask acts as a diffuser for an incoming laser beam, scattering a speckle pattern to a CMOS chip, which is recorded once as a reference. A sample which is afterwards inserted somewhere in the optical beam path changes the speckle pattern. A single (non-iterative) image processing step, comparing the modified speckle pattern with the previously recorded one, generates a sharp image of the sample. After a first calibration the method works in real-time and allows quantitative imaging of complex (amplitude and phase) samples in an extended three-dimensional volume. Since no lenses are used, the method is free from lens abberations. Compared to standard inline holography the diffuse sample illumination improves the axial sectioning capability by increasing the effective numerical aperture in the illumination path, and it suppresses the undesired so-called twin images. For demonstration, a high resolution spatial light modulator (SLM) is programmed to act as the pseudo-random phase mask. We show experimental results, imaging microscopic biological samples, e.g. insects, within an extended volume at a distance of 15 cm with a transverse and longitudinal resolution of about 60 μm and 400 μm, respectively.

  2. Demagnifying electron projection with grid masks

    International Nuclear Information System (INIS)

    Politycki, A.; Meyer, A.

    1978-01-01

    Tightly toleranced micro- and submicrostructures with smooth edges were realized by using transmission masks with an improved supporting grid (width of traverses 0.8 μm). Local edge shift due to the proximity effect is kept at a minimum. Supporting grids with stil narrower traverses (0.5 μm) were prepared by generating the grid pattern by electron beam writing. Masks of this kind allow projection at a demagnification ratio of 1:4, resulting in large image fields. (orig.) [de

  3. The pros and cons of masked priming.

    Science.gov (United States)

    Forster, K I

    1998-03-01

    Masked priming paradigms offer the promise of tapping automatic, strategy-free lexical processing, as evidenced by the lack of expectancy disconfirmation effects, and proportionality effects in semantic priming experiments. But several recent findings suggest the effects may be prelexical. These findings concern nonword priming effects in lexical decision and naming, the effects of mixed-case presentation on nonword priming, and the dependence of priming on the nature of the distractors in lexical decision, suggesting possible strategy effects. The theory underlying each of these effects is discussed, and alternative explanations are developed that do not preclude a lexical basis for masked priming effects.

  4. Robust source and mask optimization compensating for mask topography effects in computational lithography.

    Science.gov (United States)

    Li, Jia; Lam, Edmund Y

    2014-04-21

    Mask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal source-mask pair under the condition of aberrated pupil. We also use a statistical model to determine the Zernike coefficients for the phase control and adjustment. Rigorous simulations of thick masks show that this approach provides compensation for mask topography effects by improving the pattern fidelity and increasing uDOF.

  5. Cosmic Ballet or Devil's Mask?

    Science.gov (United States)

    2004-04-01

    Stars like our Sun are members of galaxies, and most galaxies are themselves members of clusters of galaxies. In these, they move around among each other in a mostly slow and graceful ballet. But every now and then, two or more of the members may get too close for comfort - the movements become hectic, sometimes indeed dramatic, as when galaxies end up colliding. ESO PR Photo 12/04 shows an example of such a cosmic tango. This is the superb triple system NGC 6769-71, located in the southern Pavo constellation (the Peacock) at a distance of 190 million light-years. This composite image was obtained on April 1, 2004, the day of the Fifth Anniversary of ESO's Very Large Telescope (VLT). It was taken in the imaging mode of the VIsible Multi-Object Spectrograph (VIMOS) on Melipal, one of the four 8.2-m Unit Telescopes of the VLT at the Paranal Observatory (Chile). The two upper galaxies, NGC 6769 (upper right) and NGC 6770 (upper left), are of equal brightness and size, while NGC 6771 (below) is about half as bright and slightly smaller. All three galaxies possess a central bulge of similar brightness. They consist of elderly, reddish stars and that of NGC 6771 is remarkable for its "boxy" shape, a rare occurrence among galaxies. Gravitational interaction in a small galaxy group NGC 6769 is a spiral galaxy with very tightly wound spiral arms, while NGC 6770 has two major spiral arms, one of which is rather straight and points towards the outer disc of NGC 6769. NGC 6770 is also peculiar in that it presents two comparatively straight dark lanes and a fainter arc that curves towards the third galaxy, NGC 6771 (below). It is also obvious from this new VLT photo that stars and gas have been stripped off NGC 6769 and NGC 6770, starting to form a common envelope around them, in the shape of a Devil's Mask. There is also a weak hint of a tenuous bridge between NGC 6769 and NGC 6771. All of these features testify to strong gravitational interaction between the three galaxies

  6. Are Masking-Based Models of Risk Useful?

    Science.gov (United States)

    Gisiner, Robert C

    2016-01-01

    As our understanding of directly observable effects from anthropogenic sound exposure has improved, concern about "unobservable" effects such as stress and masking have received greater attention. Equal energy models of masking such as power spectrum models have the appeal of simplicity, but do they offer biologically realistic assessments of the risk of masking? Data relevant to masking such as critical ratios, critical bandwidths, temporal resolution, and directional resolution along with what is known about general mammalian antimasking mechanisms all argue for a much more complicated view of masking when making decisions about the risk of masking inherent in a given anthropogenic sound exposure scenario.

  7. High quality mask storage in an advanced Logic-Fab

    Science.gov (United States)

    Jähnert, Carmen; Fritsche, Silvio

    2012-02-01

    High efficient mask logistics as well as safe and high quality mask storage are essential requirements within an advanced lithography area of a modern logic waferfab. Fast operational availability of the required masks at the exposure tool with excellent mask condition requires a safe mask handling, safeguarding of high mask quality over the whole mask usage time without any quality degradation and an intelligent mask logistics. One big challenge is the prevention of haze on high advanced phase shift masks used in a high volume production line for some thousands of 248nm or 193nm exposures. In 2008 Infineon Dresden qualified a customer specific developed semi-bare mask storage system from DMSDynamic Micro Systems in combination with a high advanced mask handling and an interconnected complex logistic system. This high-capacity mask storage system DMS M1900.22 for more than 3000 masks with fully automated mask and box handling as well as full-blown XCDA purge has been developed and adapted to the Infineon Lithotoollandscape using Nikon and SMIF reticle cases. Advanced features for ESD safety and mask security, mask tracking via RFID and interactions with the exposure tools were developed and implemented. The stocker is remote controlled by the iCADA-RSM system, ordering of the requested mask directly from the affected exposure tool allows fast access. This paper discusses the advantages and challenges for this approach as well as the practical experience gained during the implementation of the new system which improves the fab performance with respect to mask quality, security and throughput. Especially the realization of an extremely low and stable humidity level in addition with a well controlled air flow at each mask surface, preventing masks from haze degradation and particle contamination, turns out to be a notable technical achievement. The longterm stability of haze critical masks has been improved significantly. Relevant environmental parameters like

  8. Experiment list: SRX122496 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available || chip antibody=Rel || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip ant...ibody catalog number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc

  9. Chips with everything

    CERN Document Server

    CERN. Geneva

    2007-01-01

    In March 1972, Sir Robin Saxby gave a talk to the Royal Television Society called 'TV and Chips' about a 'state of the art' integrated circuit, containing 50 resistors and 50 transistors. Today's 'state of the art' chips contain up to a billion transistors. This enormous leap forward illustrates how dramatically the semiconductor industry has evolved in the past 34 years. The next 10 years are predicted to bring times of turbulent change for the industry, as more and more digital devices are used around the world. In this talk, Sir Robin will discuss the history of the Microchip Industry in parallel with ARM's history, demonstrating how a small European start-up can become a world player in the IT sector. He will also present his vision of important applications and developments in the next 20 years that are likely to become even more pervasive than the mobile phone is today, and will provide anecdotes and learning points from his own experience at ARM. About ARM: Sir Robin and a group of designers from Acorn...

  10. Evaluation of a new pediatric positive airway pressure mask.

    Science.gov (United States)

    Kushida, Clete A; Halbower, Ann C; Kryger, Meir H; Pelayo, Rafael; Assalone, Valerie; Cardell, Chia-Yu; Huston, Stephanie; Willes, Leslee; Wimms, Alison J; Mendoza, June

    2014-09-15

    The choice and variety of pediatric masks for continuous positive airway pressure (CPAP) is limited in the US. Therefore, clinicians often prescribe modified adult masks. Until recently a mask for children aged mask for children aged 2-7 years (Pixi; ResMed Ltd, Sydney, Australia). Patients aged 2-7 years were enrolled and underwent in-lab baseline polysomnography (PSG) using their previous mask, then used their previous mask and the VPAP III ST-A flow generator for ≥ 10 nights at home. Thereafter, patients switched to the Pixi mask for ≥ 2 nights before returning for a PSG during PAP therapy via the Pixi mask. Patients then used the Pixi mask at home for ≥ 21 nights. Patients and their parents/guardians returned to the clinic for follow-up and provided feedback on the Pixi mask versus their previous mask. AHI with the Pixi mask was 1.1 ± 1.5/h vs 2.6 ± 5.4/h with the previous mask (p = 0.3538). Parents rated the Pixi mask positively for: restfulness of the child's sleep, trouble in getting the child to sleep, and trouble in having the child stay asleep. The Pixi mask was also rated highly for leaving fewer or no marks on the upper lip and under the child's ears, and being easy to remove. The Pixi mask is suitable for children aged 2-7 years and provides an alternative to other masks available for PAP therapy in this age group. © 2014 American Academy of Sleep Medicine.

  11. Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

    International Nuclear Information System (INIS)

    Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

    2014-01-01

    Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

  12. Posleslovije k "Zolotoi maske" / Boris Tuch

    Index Scriptorium Estoniae

    Tuch, Boris, 1946-

    2005-01-01

    Vene draamafestivali "Kuldne mask Eestis" lavastusest : "September.doc", lav. Mihhail Ugarov, I. Võrõpajevi "Hapnik" lav. Viktor Rõzhakov Teatr.doc esituses, Sophoklese "Kuningas Oidipus" lav. Andrei Prikotenko Peterburi Teatri Liteinõi esituses, M. Ugarovi lavastus "OblomOFF"

  13. Emergency airway management with laryngeal mask airway

    African Journals Online (AJOL)

    2009-12-01

    Dec 1, 2009 ... management and as a ventilatory device during anesthesia. It is concluded that ... minutes with a tight fitting face mask and a closed system; and 0.6 mg of ... In the operating suite, intravenous access was secured and saline ...

  14. Using excitation patterns to predict auditory masking

    NARCIS (Netherlands)

    Heijden, van der M.L.; Kohlrausch, A.G.

    1992-01-01

    We investigated how well auditory masking can be predicted from excitation patterns. For this purpose, a quantitative model proposed by Moore and Glasberg (1987) and Glasberg and Moore (1990) was used to calculate excitation patterns evoked by stationary sounds. We performed simulations of a number

  15. Central auditory masking by an illusory tone.

    Directory of Open Access Journals (Sweden)

    Christopher J Plack

    Full Text Available Many natural sounds fluctuate over time. The detectability of sounds in a sequence can be reduced by prior stimulation in a process known as forward masking. Forward masking is thought to reflect neural adaptation or neural persistence in the auditory nervous system, but it has been unclear where in the auditory pathway this processing occurs. To address this issue, the present study used a "Huggins pitch" stimulus, the perceptual effects of which depend on central auditory processing. Huggins pitch is an illusory tonal sensation produced when the same noise is presented to the two ears except for a narrow frequency band that is different (decorrelated between the ears. The pitch sensation depends on the combination of the inputs to the two ears, a process that first occurs at the level of the superior olivary complex in the brainstem. Here it is shown that a Huggins pitch stimulus produces more forward masking in the frequency region of the decorrelation than a noise stimulus identical to the Huggins-pitch stimulus except with perfect correlation between the ears. This stimulus has a peripheral neural representation that is identical to that of the Huggins-pitch stimulus. The results show that processing in, or central to, the superior olivary complex can contribute to forward masking in human listeners.

  16. Testing Tactile Masking between the Forearms.

    Science.gov (United States)

    D'Amour, Sarah; Harris, Laurence R

    2016-02-10

    Masking, in which one stimulus affects the detection of another, is a classic technique that has been used in visual, auditory, and tactile research, usually using stimuli that are close together to reveal local interactions. Masking effects have also been demonstrated in which a tactile stimulus alters the perception of a touch at a distant location. Such effects can provide insight into how components of the body's representations in the brain may be linked. Occasional reports have indicated that touches on one hand or forearm can affect tactile sensitivity at corresponding contralateral locations. To explore the matching of corresponding points across the body, we can measure the spatial tuning and effect of posture on contralateral masking. Careful controls are required to rule out direct effects of the remote stimulus, for example by mechanical transmission, and also attention effects in which thresholds may be altered by the participant's attention being drawn away from the stimulus of interest. The use of this technique is beneficial as a behavioural measure for exploring which parts of the body are functionally connected and whether the two sides of the body interact in a somatotopic representation. This manuscript describes a behavioural protocol that can be used for studying contralateral tactile masking.

  17. Software error masking effect on hardware faults

    International Nuclear Information System (INIS)

    Choi, Jong Gyun; Seong, Poong Hyun

    1999-01-01

    Based on the Very High Speed Integrated Circuit (VHSIC) Hardware Description Language (VHDL), in this work, a simulation model for fault injection is developed to estimate the dependability of the digital system in operational phase. We investigated the software masking effect on hardware faults through the single bit-flip and stuck-at-x fault injection into the internal registers of the processor and memory cells. The fault location reaches all registers and memory cells. Fault distribution over locations is randomly chosen based on a uniform probability distribution. Using this model, we have predicted the reliability and masking effect of an application software in a digital system-Interposing Logic System (ILS) in a nuclear power plant. We have considered four the software operational profiles. From the results it was found that the software masking effect on hardware faults should be properly considered for predicting the system dependability accurately in operation phase. It is because the masking effect was formed to have different values according to the operational profile

  18. Shadow mask evaporation through monolayer modified nanostencils

    NARCIS (Netherlands)

    Kolbel, M.; Tjerkstra, R.W.; Brugger, J.P.; van Rijn, C.J.M.; Nijdam, W.; Huskens, Jurriaan; Reinhoudt, David

    2002-01-01

    Gradual clogging of the apertures of nanostencils used as miniature shadow masks in metal evaporations can be reduced by coating the stencil with self-assembled monolayers (SAM). This is quantified by the dimensions (height and volume) of gold features obtained by nanostencil evaporation as measured

  19. Method for coating substrates and mask holder

    NARCIS (Netherlands)

    Bijkerk, Frederik; Yakshin, Andrey; Louis, Eric; Kessels, M.J.H.; Maas, Edward Lambertus Gerardus; Bruineman, Caspar

    2004-01-01

    When coating substrates it is frequently desired that the layer thickness should be a certain function of the position on the substrate to be coated. To control the layer thickness a mask is conventionally arranged between the coating particle source and the substrate. This leads to undesirable

  20. Parallel Implementation of the Terrain Masking Algorithm

    Science.gov (United States)

    1994-03-01

    contains behavior rules which can define a computation or an algorithm. It can communicate with other process nodes, it can contain local data, and it can...terrain maskirg calculation is being performed. It is this algorithm that comsumes about seventy percent of the total terrain masking calculation time

  1. Green binary and phase shifting mask

    Science.gov (United States)

    Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

    2009-12-01

    SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

  2. Mask CD relationship to temperature at the time backscatter is received

    Science.gov (United States)

    Zable, Harold; Kronmiller, Tom; Pearman, Ryan; Guthrie, Bill; Shirali, Nagesh; Masuda, Yukihiro; Kamikubo, Takashi; Nakayamada, Noriaki; Fujimura, Aki

    2017-07-01

    Mask writers need to be able to write sub-50nm features accurately. Nano-imprint lithography (NIL) masters need to create sub-20nm line and space (L:S) patterns reliably. Increasingly slower resists are deployed, but mask write times need to remain reasonable. The leading edge EBM-9500 offers 1200A/cm2 current density to shoot variable shaped beam (VSB) to write the masks. Last year, thermal effect correction (TEC) was introduced by NuFlare in the EBM-95001. It is a GPU-accelerated inline correction for the effect that the temperature of the resist has on CD. For example, a 100nm CD may print at 102nm where that area was at a comparably high temperature at the time of the shot. Since thermal effect is a temporal effect, the simulated temperature of the surface of the mask is dynamically updated for the effect of each shot in order to accurately predict the cumulative effect that is the temperature at the location of the shot at the time of the shot and therefore its impact on CD. The shot dose is changed to reverse the effects of the temperature change. This paper for the first time reveals an enhancement to this thermal model and a simulator for it. It turns out that the temperature at the time each location receives backscatter from other shots also make a difference to the CD. The effect is secondary, but still measurable for some resists and substrates. Results of a test-chip study will be presented. The computation required for the backscatter effect is substantial. It has been demonstrated that this calculation can be performed fast enough to be inline with the EBM-9500 with a reasonable-sized computing platform. Run-time results and the computing architecture will be presented.

  3. Summation versus suppression in metacontrast masking: On the potential pitfalls of using metacontrast masking to assess perceptual-motor dissociation.

    Science.gov (United States)

    Cardoso-Leite, Pedro; Waszak, Florian

    2014-07-01

    A briefly flashed target stimulus can become "invisible" when immediately followed by a mask-a phenomenon known as backward masking, which constitutes a major tool in the cognitive sciences. One form of backward masking is termed metacontrast masking. It is generally assumed that in metacontrast masking, the mask suppresses activity on which the conscious perception of the target relies. This assumption biases conclusions when masking is used as a tool-for example, to study the independence between perceptual detection and motor reaction. This is because other models can account for reduced perceptual performance without requiring suppression mechanisms. In this study, we used signal detection theory to test the suppression model against an alternative view of metacontrast masking, referred to as the summation model. This model claims that target- and mask-related activations fuse and that the difficulty in detecting the target results from the difficulty to discriminate this fused response from the response produced by the mask alone. Our data support this alternative view. This study is not a thorough investigation of metacontrast masking. Instead, we wanted to point out that when a different model is used to account for the reduced perceptual performance in metacontrast masking, there is no need to postulate a dissociation between perceptual and motor responses to account for the data. Metacontrast masking, as implemented in the Fehrer-Raab situation, therefore is not a valid method to assess perceptual-motor dissociations.

  4. Oral mask ventilation is more effective than face mask ventilation after nasal surgery.

    Science.gov (United States)

    Yazicioğlu, Dilek; Baran, Ilkay; Uzumcugil, Filiz; Ozturk, Ibrahim; Utebey, Gulten; Sayın, M Murat

    2016-06-01

    To evaluate and compare the face mask (FM) and oral mask (OM) ventilation techniques during anesthesia emergence regarding tidal volume, leak volume, and difficult mask ventilation (DMV) incidence. Prospective, randomized, crossover study. Operating room, training and research hospital. American Society of Anesthesiologists physical status I and II adult patients scheduled for nasal surgery. Patients in group FM-OM received FM ventilation first, followed by OM ventilation, and patients in group OM-FM received OM ventilation first, followed by FM ventilation, with spontaneous ventilation after deep extubation. The FM ventilation was applied with the 1-handed EC-clamp technique. The OM was placed only over the mouth, and the 1-handed EC-clamp technique was used again. A child's size FM was used for the OM ventilation technique, the mask was rotated, and the inferior part of the mask was placed toward the nose. The leak volume (MVleak), mean airway pressure (Pmean), and expired tidal volume (TVe) were assessed with each mask technique for 3 consecutive breaths. A mask ventilation grade ≥3 was considered DMV. DMV occurred more frequently during FM ventilation (75% with FM vs 8% with OM). In the FM-first sequence, the mean TVe was 249±61mL with the FM and 455±35mL with the OM (P=.0001), whereas in the OM-first sequence, it was 276±81mL with the FM and 409±37mL with the OM (P=.0001). Regardless of the order used, the OM technique significantly decreased the MVleak and increased the TVe when compared to the FM technique. During anesthesia emergence after nasal surgery the OM may offer an effective ventilation method as it decreases the incidence of DMV and the gas leak around the mask and provides higher tidal volume delivery compared with FM ventilation. Copyright © 2016 Elsevier Inc. All rights reserved.

  5. Nasal mask ventilation is better than face mask ventilation in edentulous patients

    OpenAIRE

    Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

    2016-01-01

    Background and Aims: Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Material and Methods: Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively ev...

  6. Mask_explorer: A tool for exploring brain masks in fMRI group analysis.

    Science.gov (United States)

    Gajdoš, Martin; Mikl, Michal; Mareček, Radek

    2016-10-01

    Functional magnetic resonance imaging (fMRI) studies of the human brain are appearing in increasing numbers, providing interesting information about this complex system. Unique information about healthy and diseased brains is inferred using many types of experiments and analyses. In order to obtain reliable information, it is necessary to conduct consistent experiments with large samples of subjects and to involve statistical methods to confirm or reject any tested hypotheses. Group analysis is performed for all voxels within a group mask, i.e. a common space where all of the involved subjects contribute information. To our knowledge, a user-friendly interface with the ability to visualize subject-specific details in a common analysis space did not yet exist. The purpose of our work is to develop and present such interface. Several pitfalls have to be avoided while preparing fMRI data for group analysis. One such pitfall is spurious non-detection, caused by inferring conclusions in the volume of a group mask that has been corrupted due to a preprocessing failure. We describe a MATLAB toolbox, called the mask_explorer, designed for prevention of this pitfall. The mask_explorer uses a graphical user interface, enables a user-friendly exploration of subject masks and is freely available. It is able to compute subject masks from raw data and create lists of subjects with potentially problematic data. It runs under MATLAB with the widely used SPM toolbox. Moreover, we present several practical examples where the mask_explorer is usefully applied. The mask_explorer is designed to quickly control the quality of the group fMRI analysis volume and to identify specific failures related to preprocessing steps and acquisition. It helps researchers detect subjects with potentially problematic data and consequently enables inspection of the data. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  7. Pelly Crossing wood chip boiler

    Energy Technology Data Exchange (ETDEWEB)

    1985-03-11

    The Pelly wood chip project has demonstrated that wood chips are a successful fuel for space and domestic water heating in a northern climate. Pelly Crossing was chosen as a demonstration site for the following reasons: its extreme temperatures, an abundant local supply of resource material, the high cost of fuel oil heating and a lack of local employment. The major obstacle to the smooth operation of the boiler system was the poor quality of the chip supply. The production of poor quality chips has been caused by inadequate operation and maintenance of the chipper. Dull knives and faulty anvil adjustments produced chips and splinters far in excess of the one centimetre size specified for the system's design. Unanticipated complications have caused costs of the system to be higher than expected by approximately $15,000. The actual cost of the project was approximately $165,000. The first year of the system's operation was expected to accrue $11,600 in heating cost savings. This estimate was impossible to confirm given the system's irregular operation and incremental costs. Consistent operation of the system for a period of at least one year plus the installation of monitoring devices will allow the cost effectiveness to be calculated. The wood chip system's impact on the environment was estimated to be minimal. Wood chip burning was considered cleaner and safer than cordwood burning. 9 refs., 6 figs., 6 tabs.

  8. Scatterometry on pelliclized masks: an option for wafer fabs

    Science.gov (United States)

    Gallagher, Emily; Benson, Craig; Higuchi, Masaru; Okumoto, Yasuhiro; Kwon, Michael; Yedur, Sanjay; Li, Shifang; Lee, Sangbong; Tabet, Milad

    2007-03-01

    Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

  9. Comparison of monaural (CMR) and binaural (BMLD) masking release

    NARCIS (Netherlands)

    Par, van de S.L.J.D.E.; Kohlrausch, A.G.

    1998-01-01

    Release of masking for a sinusoidal signal of 5 kHz masked by a 25-Hz-wide noise band centered around 5 kHz was measured. The masking release was provided by a second noise band that was comodulated with the on-frequency masker band. For CMR configurations the second noise band was centered at 3 kHz

  10. 21 CFR 868.5550 - Anesthetic gas mask.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over a...

  11. Single chip camera active pixel sensor

    Science.gov (United States)

    Shaw, Timothy (Inventor); Pain, Bedabrata (Inventor); Olson, Brita (Inventor); Nixon, Robert H. (Inventor); Fossum, Eric R. (Inventor); Panicacci, Roger A. (Inventor); Mansoorian, Barmak (Inventor)

    2003-01-01

    A totally digital single chip camera includes communications to operate most of its structure in serial communication mode. The digital single chip camera include a D/A converter for converting an input digital word into an analog reference signal. The chip includes all of the necessary circuitry for operating the chip using a single pin.

  12. Ultra-thin chip technology and applications

    CERN Document Server

    2010-01-01

    Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

  13. Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions

    International Nuclear Information System (INIS)

    Li Bin; Wei Lan; Wen Cai

    2014-01-01

    This paper aims to simulate the I–V static characteristic of the enhancement-mode (E-mode) N-polar GaN metal—insulator—semiconductor field effect transistor (MISFET) with self-aligned source/drain regions. Firstly, with SILVACO TCAD device simulation, the drain—source current as a function of the gate—source voltage is calculated and the dependence of the drain—source current on the drain—source voltage in the case of different gate—source voltages for the device with a 0.62 μm gate length is investigated. Secondly, a comparison is made with the experimental report. Lastly, the transfer characteristic with different gate lengths and different buffer layers has been performed. The results show that the simulation is in accord with the experiment at the gate length of 0.62 μm and the short channel effect becomes pronounced as gate length decreases. The E-mode will not be held below a 100 nm gate length unless both transversal scaling and vertical scaling are being carried out simultaneously. (semiconductor devices)

  14. Contrast Gain Control Model Fits Masking Data

    Science.gov (United States)

    Watson, Andrew B.; Solomon, Joshua A.; Null, Cynthia H. (Technical Monitor)

    1994-01-01

    We studied the fit of a contrast gain control model to data of Foley (JOSA 1994), consisting of thresholds for a Gabor patch masked by gratings of various orientations, or by compounds of two orientations. Our general model includes models of Foley and Teo & Heeger (IEEE 1994). Our specific model used a bank of Gabor filters with octave bandwidths at 8 orientations. Excitatory and inhibitory nonlinearities were power functions with exponents of 2.4 and 2. Inhibitory pooling was broad in orientation, but narrow in spatial frequency and space. Minkowski pooling used an exponent of 4. All of the data for observer KMF were well fit by the model. We have developed a contrast gain control model that fits masking data. Unlike Foley's, our model accepts images as inputs. Unlike Teo & Heeger's, our model did not require multiple channels for different dynamic ranges.

  15. Multi-part mask for implanting workpieces

    Science.gov (United States)

    Webb, Aaron P.; Carlson, Charles T.

    2016-05-10

    A multi-part mask has a pattern plate, which includes a planar portion that has the desired aperture pattern to be used during workpiece processing. The multi-part mask also has a mounting frame, which is used to hold the pattern plate. Prior to assembly, the pattern plate has an aligning portion, which has one or more holes through which reusable alignment pins are inserted. These alignment pins enter kinematic joints disposed on the mounting frame, which serve to precisely align the pattern plate to the mounting frame. After the pattern plate has been secured to the mounting frame, the aligning portion can be detached from the pattern plate. The alignment pins can be reused at a later time. In some embodiments, the pattern plate can later be removed from the mounting frame, so that the mounting frame may be reused.

  16. Negative ion source improvement by introduction of a shutter mask

    International Nuclear Information System (INIS)

    Belchenko, Yu.I.; Oka, Y.; Kaneko, O.; Takeiri, Y.; Tsumori, K.; Osakabe, M.; Ikeda, K.; Asano, E.; Kawamoto, T.

    2004-01-01

    Studies of a multicusp source were recently done at the National Institute for Fusion Science by plasma grid masking. The maximal H - ion yield is ∼1.4 times greater for the shutter mask case than that for the standard source. Negative ion current evolution during the cesium feed to the masked plasma grid evidenced that about 60% of negative ions are produced on the shutter mask surface, while about 30% are formed on the plasma grid emission hole edges, exposed by cesium with the mask open

  17. Wide-field optical detection of nanoparticles using on-chip microscopy and self-assembled nanolenses

    Science.gov (United States)

    Mudanyali, Onur; McLeod, Euan; Luo, Wei; Greenbaum, Alon; Coskun, Ahmet F.; Hennequin, Yves; Allier, Cédric P.; Ozcan, Aydogan

    2013-03-01

    The direct observation of nanoscale objects is a challenging task for optical microscopy because the scattering from an individual nanoparticle is typically weak at optical wavelengths. Electron microscopy therefore remains one of the gold standard visualization methods for nanoparticles, despite its high cost, limited throughput and restricted field-of-view. Here, we describe a high-throughput, on-chip detection scheme that uses biocompatible wetting films to self-assemble aspheric liquid nanolenses around individual nanoparticles to enhance the contrast between the scattered and background light. We model the effect of the nanolens as a spatial phase mask centred on the particle and show that the holographic diffraction pattern of this effective phase mask allows detection of sub-100 nm particles across a large field-of-view of >20 mm2. As a proof-of-concept demonstration, we report on-chip detection of individual polystyrene nanoparticles, adenoviruses and influenza A (H1N1) viral particles.

  18. Prototyping chips in minutes: Direct Laser Plotting (DLP) of functional microfluidic structures

    KAUST Repository

    Wang, Limu

    2013-10-10

    We report a fast and simple prototyping method to fabricate polymer-based microfluidic chips using Direct Laser Plotting (DLP) technique, by which various functional micro-structures can be realized within minutes, in a mask-free and out-of-cleanroom fashion. A 2D Computer-Aid-Design (CAD) software was employed to layout the required micro-structures and micro-channels, a CO2 laser plotter was then used to construct the microstructures. The desired patterns can be plotted directly on PDMS substrates and bio-compatible polymer films by manipulating the strength and density of laser pulses. With the DLP technique, chip-embedded micro-electrodes, micro-mixers and 3D microfluidic chips with 5 layers, which normally require several days of work in a cleanroom facility, can be fabricated in minutes in common laboratory. This novel method can produce microfluidic channels with average feature size of 100 μm, while feature size of 50 μm or smaller is achievable by making use of the interference effect from laser impulsion. In this report, we present the optimized parameters for successful fabrication of 3D microchannels, micro-mixers and microfluidic chips for protein concentration measurements (Bovine Serum Albumine (BSA) test), and a novel procedure to pattern flexible embedding electrodes on PDMS-based microfluidic chips. DLP offers a convenient and low cost alternative to conventional microfluidic channel fabrication technique which relies on complicated and hazardous soft lithography process.

  19. [Patients' reaction to pharmacists wearing a mask during their consultations].

    Science.gov (United States)

    Tamura, Eri; Kishimoto, Keiko; Fukushima, Noriko

    2013-01-01

      This study sought to determine the effect of pharmacists wearing a mask on the consultation intention of patients who do not have a trusting relationship with the pharmacists. We conducted a questionnaire survey of customers at a Tokyo drugstore in August 2012. Subjects answered a questionnaire after watching two medical teaching videos, one in which the pharmacist was wearing a mask and the other in which the pharmacist was not wearing a mask. Data analysis was performed using a paired t-test and multiple logistic regression. The paired t-test revealed a significant difference in 'Maintenance Problem' between the two pharmacist situations. After excluding factors not associated with wearing a mask, multiple logistic regression analysis identified three independent variables with a significant effect on participants not wanting to consult with a pharmacist wearing a mask. Positive factors were 'active-inactive' and 'frequency mask use', a negative factor was 'age'. Our study has shown that pharmacists wearing a mask may be a factor that prevents patients from consulting with pharmacist. Those patients whose intention to consult might be affected by the pharmacists wearing a mask tended to be younger, to have no habit of wearing masks preventively themselves, and to form a negative opinion of such pharmacists. Therefore, it was estimated that pharmacists who wear masks need to provide medical education by asking questions more positively than when they do not wear a mask in order to prevent the patient worrying about oneself.

  20. Tunable on chip optofluidic laser

    DEFF Research Database (Denmark)

    Bakal, Avraham; Vannahme, Christoph; Kristensen, Anders

    2016-01-01

    On chip tunable laser is demonstrated by realizing a microfluidic droplet array. The periodicity is controlled by the pressure applied to two separate inlets, allowing to tune the lasing frequency over a broad spectral range.......On chip tunable laser is demonstrated by realizing a microfluidic droplet array. The periodicity is controlled by the pressure applied to two separate inlets, allowing to tune the lasing frequency over a broad spectral range....

  1. Contact printed masks for 3D microfabrication in negative resists

    DEFF Research Database (Denmark)

    Häfliger, Daniel; Boisen, Anja

    2005-01-01

    We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded into the ......We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded...... into the negative resist to protect buried material from UV-exposure. Unlike direct evaporation-deposition of a mask onto the SU-8, printing avoids high stress and radiation, thus preventing resist wrinkling and prepolymerization. We demonstrate effective monolithic fabrication of soft, 4-μm thick and 100-μm long...

  2. The effect of masking in the attentional dwell time paradigm

    DEFF Research Database (Denmark)

    Petersen, Anders

    2009-01-01

    , 1994). In most studies of attentional dwell time, two masked targets have been used. Moore et al. (1996) have criticised the masking of the first target when measuring the attentional dwell time, finding a shorter attentional dwell time when the first mask was omitted. In the presented work, the effect...... of the first mask is further investigated by including a condition where the first mask is presented without a target. The results from individual subjects show that the findings of Moore et al. can be replicated. The results also suggest that presenting the first mask without a target is enough to produce...... an impairment of the second target. Hence, the attentional dwell time may be a combined effect arising from attending to both the first target and its mask....

  3. APPLICATION OF EQUIPMENT FOR AUTOMATIC CONTROL OF PLANAR STRUCTURES IN MANUFACTURING MASTER MASKS OF INTEGRATED CIRCUITS ON PHOTO-MASKS

    Directory of Open Access Journals (Sweden)

    S. M. Avakov

    2007-01-01

    Full Text Available Following the concept of defect-free manufacturing of master masks of IC on photo-masks, two Belarusian sets of optomechanical equipment for 0,3 5 p and 90 nanometers are presented in the paper. Each of the sets comprises:   • Multi-channel laser pattern generator; • Automatic mask defect inspection system; • Laser-based mask defect repair system.The paper contains description of automatic mask defect inspection process during photo-mask manufacturing and respective basic technological operations of the processes.Advantages of a complex approach to the development of a set of opto-mechanical equipment for defect-free manufacturing of photo-masks have been analyzed in the paper. 

  4. Mask ventilation with two different face masks in the delivery room for preterm infants: a randomized controlled trial.

    Science.gov (United States)

    Cheung, D; Mian, Q; Cheung, P-Y; O'Reilly, M; Aziz, K; van Os, S; Pichler, G; Schmölzer, G M

    2015-07-01

    If an infant fails to initiate spontaneous breathing after birth, international guidelines recommend a positive pressure ventilation (PPV). However, PPV by face mask is frequently inadequate because of leak between the face and mask. Despite a variety of available face masks, none have been prospectively compared in a randomized fashion. We aimed to evaluate and compare leak between two commercially available round face masks (Fisher & Paykel (F&P) and Laerdal) in preterm infants mask PPV in the delivery room routinely had a flow sensor placed between the mask and T-piece resuscitator. Infants were randomly assigned to receive PPV with either a F&P or Laerdal face mask. All resuscitators were trained in the use of both face masks. We compared mask leak, airway pressures, tidal volume and ventilation rate between the two groups. Fifty-six preterm infants (n=28 in each group) were enrolled; mean±s.d. gestational age 28±3 weeks; birth weight 1210±448 g; and 30 (52%) were male. Apgar scores at 1 and 5 min were 5±3 and 7±2, respectively. Infants randomized to the F&P face mask and Laerdal face mask had similar mask leak (30 (25-38) versus 35 (24-46)%, median (interquartile range), respectively, P=0.40) and tidal volume (7.1 (4.9-8.9) versus 6.6 (5.2-8.9) ml kg(-1), P=0.69) during PPV. There were no significant differences in ventilation rate, inflation time or airway pressures between groups. The use of either face mask during PPV in the delivery room yields similar mask leak in preterm infants <33 weeks gestational age.

  5. Noninvasive CPAP with face mask: comparison among new air-entrainment masks and the Boussignac valve.

    Science.gov (United States)

    Mistraletti, Giovanni; Giacomini, Matteo; Sabbatini, Giovanni; Pinciroli, Riccardo; Mantovani, Elena S; Umbrello, Michele; Palmisano, Debora; Formenti, Paolo; Destrebecq, Anne L L; Iapichino, Gaetano

    2013-02-01

    The performances of 2 noninvasive CPAP systems (high flow and low flow air-entrainment masks) were compared to the Boussignac valve in 3 different scenarios. Scenario 1: pneumatic lung simulator with a tachypnea pattern (tidal volume 800 mL at 40 breaths/min). Scenario 2: Ten healthy subjects studied during tidal breaths and tachypnea. Scenario 3: Twenty ICU subjects enrolled for a noninvasive CPAP session. Differences between set and effective CPAP level and F(IO(2)), as well as the lowest airway pressure and the pressure swing around the imposed CPAP level, were analyzed. The lowest airway pressure and swing were correlated to the pressure-time product (area of the airway pressure curve below the CPAP level) measured with the simulator. P(aO(2)) was a subject's further performance index. Lung simulator: Boussignac F(IO(2)) was 0.54, even if supplied with pure oxygen. The air-entrainment masks had higher swing than the Boussignac (P = .007). Pressure-time product correlated better with pressure swing (Spearman correlation coefficient [ρ] = 0.97) than with lowest airway pressure (ρ = 0.92). In healthy subjects, the high-flow air-entrainment mask showed lower difference between set and effective F(IO(2)) (P mask had lower swing than the Boussignac valve (P = .03) with similar P(aO(2)) increase. High-flow air-entrainment mask showed the best performance in human subjects. During high flow demand, the Boussignac valve delivered lower than expected F(IO(2)) and showed higher dynamic hyper-pressurization than the air-entrainment masks. © 2013 Daedalus Enterprises.

  6. Is tinnitus an early voice of masked hypertension? High masked hypertension rate in patients with tinnitus.

    Science.gov (United States)

    Gun, Taylan; Özkan, Selçuk; Yavuz, Bunyamin

    2018-04-23

    Tinnitus is hearing a sound without any external acoustic stimulus. There are some clues of hypertension can cause tinnitus in different ways. The aim of the study was to evaluate the relationship between tinnitus and masked hypertension including echocardiographic parameters and severity of tinnitus. This study included 88 patients with tinnitus of at least 3 months duration and 85 age and gender-matched control subjects. Tinnitus severity index was used to classify the patients with tinnitus. After a complete medical history, all subjects underwent routine laboratory examination, office blood pressure measurement, hearing tests and ambulatory blood pressure monitoring. Masked hypertension is defined as normal office blood pressure measurement and high ambulatory blood pressure level. Baseline characteristics in patients and controls were similar. Prevalence of masked hypertension was significantly higher in patients with tinnitus than controls (18.2% vs 3.5%, p = 0.002). Office diastolic BP (76 ± 8.1 vs. 72.74 ± 8.68, p = 0.01), ambulatory 24-H diastolic BP (70.2 ± 9.6 vs. 66.9 ± 6.1, p = 0.07) and ambulatory daytime diastolic BP (73.7 ± 9.5 vs. 71.1 ± 6.2, p = 0.03) was significantly higher in patients with tinnitus than control group. Tinnitus severity index in patients without masked hypertension was 0 and tinnitus severity index in patients with masked hypertension were 2 (1-5). This study demonstrated that masked hypertension must be kept in mind if there is a complaint of tinnitus without any other obvious reason.

  7. Causal mechanisms of masked hypertension: socio-psychological aspects.

    Science.gov (United States)

    Ogedegbe, Gbenga

    2010-04-01

    The contribution of Dr Thomas Pickering's study to the measurement of blood pressure (BP) is the defining aspect of his academic career and achievement - narrowly defined. In this regard, two important areas characterized his study as it relates to masked hypertension. First, he introduced the term, masked hypertension, to replace the rather inappropriate term 'reverse white-coat hypertension' and 'white-coat normotension'; thus drawing attention to the fact that these patients are genuinely hypertensive by ambulatory BP but were missed by normal office BP. More importantly, he rightly maintained that masked hypertension is a true continuum of sustained hypertension rather than an aberrant measurement artifact. Second, is his pivotal study on the important role of psychosocial factors as a potential mechanism for the development of masked hypertension. In this regard, he explained masked hypertension as a conditioned response to anxiety in office settings, and highlighted the role that diagnostic labeling plays in its development. His view of masked hypertension is that of a continuum from prehypertension (based on office BP measurement) to masked hypertension (based on ambulatory BP) and finally to sustained hypertension (based on both office and ambulatory BP). He strongly believes that it is the prehypertensive patients who progress to masked hypertension. Subsequently, patients who are prehypertensive should be screened for masked hypertension and treated. In this manuscript, we summarize his study as it relates to the definition of masked hypertension, the psychosocial characteristics, mechanisms and its clinical relevance.

  8. Investigating neurophysiological correlates of metacontrast masking with magnetoencephalography

    Directory of Open Access Journals (Sweden)

    Jens Schwarzbach

    2006-01-01

    Full Text Available Early components of visual evoked potentials (VEP in EEG seem to be unaffected by target visibility in visual masking studies. Bridgeman's reanalysis of Jeffreys and Musselwhite's (1986 data suggests that a later visual component in the VEP, around 250 ms reflects the perceptual effect of masking. We challenge this view on the ground that temporal interactions between targets and masks unrelated to stimulus visibility could account for Bridgeman's observation of a U-shaped time course in VEP amplitudes for this later component. In an MEG experiment of metacontrast masking with variable stimulus onset asynchrony, we introduce a proper control, a pseudo mask. In contrast to an effective mask, the pseudomask should produce neither behavioral masking nor amplitude modulations of late VEPs. Our results show that effective masks produced a strong U-shaped perceptual effect of target visibility while performance remained virtually perfect when a pseudomask was used. The visual components around 250 ms after target onset did not show a distinction between mask and pseudomask conditions. The results indicate that these visual evoked potentials do not reveal neurophysiological correlates of stimulus visibility but rather reflect dynamic interactions between superimposed potentials elicited by stimuli in close temporal proximity. However, we observed a postperceptual component around 340 ms after target onset, located over temporal-parietal cortex, which shows a clear effect of visibility. Based on P300 ERP literature, this finding could indicate that working memory related processes contribute to metacontrast masking.

  9. Cache-aware network-on-chip for chip multiprocessors

    Science.gov (United States)

    Tatas, Konstantinos; Kyriacou, Costas; Dekoulis, George; Demetriou, Demetris; Avraam, Costas; Christou, Anastasia

    2009-05-01

    This paper presents the hardware prototype of a Network-on-Chip (NoC) for a chip multiprocessor that provides support for cache coherence, cache prefetching and cache-aware thread scheduling. A NoC with support to these cache related mechanisms can assist in improving systems performance by reducing the cache miss ratio. The presented multi-core system employs the Data-Driven Multithreading (DDM) model of execution. In DDM thread scheduling is done according to data availability, thus the system is aware of the threads to be executed in the near future. This characteristic of the DDM model allows for cache aware thread scheduling and cache prefetching. The NoC prototype is a crossbar switch with output buffering that can support a cache-aware 4-node chip multiprocessor. The prototype is built on the Xilinx ML506 board equipped with a Xilinx Virtex-5 FPGA.

  10. Atom chip gravimeter

    Science.gov (United States)

    Schubert, Christian; Abend, Sven; Gebbe, Martina; Gersemann, Matthias; Ahlers, Holger; Müntinga, Hauke; Matthias, Jonas; Sahelgozin, Maral; Herr, Waldemar; Lämmerzahl, Claus; Ertmer, Wolfgang; Rasel, Ernst

    2016-04-01

    Atom interferometry has developed into a tool for measuring rotations [1], accelerations [2], and testing fundamental physics [3]. Gravimeters based on laser cooled atoms demonstrated residual uncertainties of few microgal [2,4] and were simplified for field applications [5]. Atomic gravimeters rely on the interference of matter waves which are coherently manipulated by laser light fields. The latter can be interpreted as rulers to which the position of the atoms is compared. At three points in time separated by a free evolution, the light fields are pulsed onto the atoms. First, a coherent superposition of two momentum states is produced, then the momentum is inverted, and finally the two trajectories are recombined. Depending on the acceleration the atoms experienced, the number of atoms detected in the output ports will change. Consequently, the acceleration can be determined from the output signal. The laser cooled atoms with microkelvin temperatures used in state-of-the-art gravimeters impose limits on the accuracy [4]. Therefore, ultra-cold atoms generated by Bose-Einstein condensation and delta-kick collimation [6,7] are expected to be the key for further improvements. These sources suffered from a low flux implying an incompatible noise floor, but a competitive performance was demonstrated recently with atom chips [8]. In the compact and robust setup constructed for operation in the drop tower [6] we demonstrated all steps necessary for an atom chip gravimeter with Bose-Einstein condensates in a ground based operation. We will discuss the principle of operation, the current performance, and the perspectives to supersede the state of the art. The authors thank the QUANTUS cooperation for contributions to the drop tower project in the earlier stages. This work is supported by the German Space Agency (DLR) with funds provided by the Federal Ministry for Economic Affairs and Energy (BMWi) due to an enactment of the German Bundestag under grant numbers DLR 50WM

  11. Experiment list: SRX214075 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available age=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

  12. Experiment list: SRX122523 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Irf2 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://

  13. Experiment list: SRX122414 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  14. Experiment list: SRX214071 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available Undifferentiated || treatment=Overexpress Sox2-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacturer 2=

  15. Experiment list: SRX214086 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available entiated || cell line=KH2 || chip antibody 1=none || chip antibody manufacturer 1=none || chip antibody 2=none || chip antibody manuf...acturer 2=none http://dbarchive.biosciencedbc.jp/kyushu-

  16. Experiment list: SRX122485 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf3 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100

  17. Experiment list: SRX122521 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Irf2 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://

  18. Experiment list: SRX122417 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  19. Experiment list: SRX122520 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Irf2 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://

  20. Experiment list: SRX122413 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Junb || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http:/

  1. Experiment list: SRX122412 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Junb || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http:/

  2. Experiment list: SRX122406 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog... number 1=ab52520 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-640 http:/

  3. Experiment list: SRX122415 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  4. Experiment list: SRX214074 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ge=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

  5. Experiment list: SRX214072 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available e=Undifferentiated || treatment=Overexpress Sox2KE-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

  6. Experiment list: SRX214067 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available fferentiated || cell line=F9 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufacture...r 1=Santa Cruz || chip antibody 2=none || chip antibody manufacturer 2=none http://dbarchive.bioscien

  7. Experiment list: SRX122416 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catalog ...number 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://d

  8. Experiment list: SRX122565 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat2 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog... number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 http:/

  9. FIR Filter Sharpening by Frequency Masking and Pipelining-Interleaving Technique

    Directory of Open Access Journals (Sweden)

    CIRIC, M. P.

    2014-11-01

    Full Text Available This paper focuses on the improvements of digital filters with a highly sharp transition zone on the Xilinx FPGA chips by combining a sharpening method based on the amplitude change function and frequency masking and PI (Pipelining-Interleaving techniques. A linear phase requires digital filter realizations with Finite Impulse Response (FIR filters. On the other hand, a drawback of FIR filters applications is a low computational efficiency, especially in applications such as filter sharpening techniques, because this technique uses processing the data by repeated passes through the same filter. Computational efficiency of FIR filters can be significantly improved by using some of the multirate techniques, and such a degree of computation savings cannot be achieved in multirate implementations of IIR (Infinite Impulse Response filters. This paper shows the realization of a filter sharpening method with FIR filters combined with frequency masking and PI (Pipelining-Interleaving technique in order to effectively realize the filter with improved characteristic. This realization at the same time keeps the good features of FIR filters such as the linear phase characteristic.

  10. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  11. Geometrical superresolved imaging using nonperiodic spatial masking.

    Science.gov (United States)

    Borkowski, Amikam; Zalevsky, Zeev; Javidi, Bahram

    2009-03-01

    The resolution of every imaging system is limited either by the F-number of its optics or by the geometry of its detection array. The geometrical limitation is caused by lack of spatial sampling points as well as by the shape of every sampling pixel that generates spectral low-pass filtering. We present a novel approach to overcome the low-pass filtering that is due to the shape of the sampling pixels. The approach combines special algorithms together with spatial masking placed in the intermediate image plane and eventually allows geometrical superresolved imaging without relation to the actual shape of the pixels.

  12. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  13. Chip compacting press; Jido kirikuzu asshukuki

    Energy Technology Data Exchange (ETDEWEB)

    Oura, K. [Yuken Kogyo Co. Ltd., Kanagawa (Japan)

    1998-08-15

    The chips exhausted from various machine tools are massy, occupy much space and make working environment worse by staying added cutting oil to lower part. The chips are exhausted as a result of machining and have not constant quality. Even if used material is same the chips have various shapes and properties by kinds and machining methods of used machine tools, and are troublesome materials from a standpoint of their treatment. Pressing and solidification of the chips have frequently been tried. A chip compacting press introduced in this paper, a relatively cheap chip compacting press aimed for relatively small scale chip treatment, and has such characteristics and effects as follows. Chips are pressed and solidified by each raw material, so fractional management can be easily conducted. As casting metal chips and curled chips of iron and aluminum can be pressed to about 1/3 to 1/5 and about 1/40, respectively, space saving can be conducted. Chip compacting pressing upgrades its transporting efficiency to make possible to reduce its transporting cost. As chip solidification controls its oxidation and most cutting oil are removed, chips are easy to recycle. 2 figs., 1 tab.

  14. Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

    Science.gov (United States)

    Pack, Robert C.; Standiford, Keith; Lukanc, Todd; Ning, Guo Xiang; Verma, Piyush; Batarseh, Fadi; Chua, Gek Soon; Fujimura, Akira; Pang, Linyong

    2014-10-01

    A methodology is described wherein a calibrated model-based `Virtual' Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask designs prior to Mask Data Preparation (MDP) and mask fabrication. This type of verification addresses physical effects which occur in mask writing that may impact lithographic printing fidelity and variability. The work described here is motivated by requirements for extreme accuracy and control of variations for today's most demanding IC products. These extreme demands necessitate careful and detailed analysis of all potential sources of uncompensated error or variation and extreme control of these at each stage of the integrated OPC/ MDP/ Mask/ silicon lithography flow. The important potential sources of variation we focus on here originate on the basis of VSB mask writer physics and other errors inherent in the mask writing process. The deposited electron beam dose distribution may be examined in a manner similar to optical lithography aerial image analysis and image edge log-slope analysis. This approach enables one to catch, grade, and mitigate problems early and thus reduce the likelihood for costly long-loop iterations between OPC, MDP, and wafer fabrication flows. It moreover describes how to detect regions of a layout or mask where hotspots may occur or where the robustness to intrinsic variations may be improved by modification to the OPC, choice of mask technology, or by judicious design of VSB shots and dose assignment.

  15. Mask manufacturing improvement through capability definition and bottleneck line management

    Science.gov (United States)

    Strott, Al

    1994-02-01

    In 1989, Intel's internal mask operation limited itself to research and development activities and re-inspection and pellicle application of externally manufactured masks. Recognizing the rising capital cost of mask manufacturing at the leading edge, Intel's Mask Operation management decided to offset some of these costs by manufacturing more masks internally. This was the beginning of the challenge they set to manufacture at least 50% of Intel's mask volume internally, at world class performance levels. The first step in responding to this challenge was the completion of a comprehensive operation capability analysis. A series of bottleneck improvements by focus teams resulted in an average cycle time improvement to less than five days on all product and less than two days on critical products.

  16. Random mask optimization for fast neutron coded aperture imaging

    Energy Technology Data Exchange (ETDEWEB)

    McMillan, Kyle [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Univ. of California, Los Angeles, CA (United States); Marleau, Peter [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Brubaker, Erik [Sandia National Lab. (SNL-CA), Livermore, CA (United States)

    2015-05-01

    In coded aperture imaging, one of the most important factors determining the quality of reconstructed images is the choice of mask/aperture pattern. In many applications, uniformly redundant arrays (URAs) are widely accepted as the optimal mask pattern. Under ideal conditions, thin and highly opaque masks, URA patterns are mathematically constructed to provide artifact-free reconstruction however, the number of URAs for a chosen number of mask elements is limited and when highly penetrating particles such as fast neutrons and high-energy gamma-rays are being imaged, the optimum is seldom achieved. In this case more robust mask patterns that provide better reconstructed image quality may exist. Through the use of heuristic optimization methods and maximum likelihood expectation maximization (MLEM) image reconstruction, we show that for both point and extended neutron sources a random mask pattern can be optimized to provide better image quality than that of a URA.

  17. An investigation into the efficiency of disposable face masks.

    Science.gov (United States)

    Rogers, K B

    1980-01-01

    Disposable face masks used in hospitals have been assessed for the protection afforded the patient and the wearer by challenges of simulated natural conditions of stress. Operating theatre masks made of synthetic materials allow the wearer to breathe through the masks, and these have been shown to protect the patient well but the wearer slightly less. Cheaper paper masks are worn for ward duties, and of these only the Promask protected in area in front of the wearer: air does not pass through this mask, expired air is prevented from passing forward, and the wearer breathes unfiltered air. All the other paper masks tested allowed many bacteria-laden particles to pass through them. PMID:7440756

  18. Joint optimization of source, mask, and pupil in optical lithography

    Science.gov (United States)

    Li, Jia; Lam, Edmund Y.

    2014-03-01

    Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

  19. Effects of mask imperfections on InP etching profiles

    International Nuclear Information System (INIS)

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  20. Characterizing the monaural and binaural processes underlying reflection masking

    DEFF Research Database (Denmark)

    Buchholz, Jörg

    2007-01-01

    for the two RMTs, it is shown that forward masking effects only have a significant effect on reflection masking for delays above 7–10 ms. Moreover, binaural mechanisms were revealed which deteriorate auditory detection of test reflections for delays below 7–10 ms and enhance detection for larger delays....... The monaural and binaural processes that may underlie reflection masking are discussed in terms of auditory-modelling concepts....

  1. STUDY OF CHIP IGNITION AND CHIP MORPHOLOGY AFTER MILLING OF MAGNESIUM ALLOYS

    Directory of Open Access Journals (Sweden)

    Ireneusz Zagórski

    2016-12-01

    Full Text Available The paper analyses the impact of specified technological parameters of milling (vc, fz, ap on time to ignition. Stages leading to chip ignition were analysed. Metallographic images of magnesium chip were presented. No significant difference was observed in time to ignition in different chip fractions. Moreover, the surface of chips was free of products of ignition and signs of strong oxidation.

  2. Tachistoscopic illumination and masking of real scenes.

    Science.gov (United States)

    Chichka, David; Philbeck, John W; Gajewski, Daniel A

    2015-03-01

    Tachistoscopic presentation of scenes has been valuable for studying the emerging properties of visual scene representations. The spatial aspects of this work have generally been focused on the conceptual locations (e.g., next to the refrigerator) and directional locations of objects in 2-D arrays and/or images. Less is known about how the perceived egocentric distance of objects develops. Here we describe a novel system for presenting brief glimpses of a real-world environment, followed by a mask. The system includes projectors with mechanical shutters for projecting the fixation and masking images, a set of LED floodlights for illuminating the environment, and computer-controlled electronics to set the timing and initiate the process. Because a real environment is used, most visual distance and depth cues can be manipulated using traditional methods. The system is inexpensive, robust, and its components are readily available in the marketplace. This article describes the system and the timing characteristics of each component. We verified the system's ability to control exposure to time scales as low as a few milliseconds.

  3. The performances of standard and ResMed masks during bag-valve-mask ventilation.

    Science.gov (United States)

    Lee, Hyoung Youn; Jeung, Kyung Woon; Lee, Byung Kook; Lee, Seung Joon; Jung, Yong Hun; Lee, Geo Sung; Min, Yong Il; Heo, Tag

    2013-01-01

    A tight mask seal is frequently difficult to obtain and maintain during single-rescuer bag-valve-mask (BVM) ventilation. The ResMed mask (Bella Vista, NSW, Australia) is a continuous-positive-airway-pressure mask (CM) designed for noninvasive ventilation. In this study, we compared the ventilation performances of a standard mask (SM) and a ResMed CM using a simulation manikin in an out-of-hospital single-rescuer BVM ventilation scenario. Thirty emergency medical technicians (EMTs) performed two 2-minute attempts to ventilate a simulation manikin using BVM ventilation, alternatively, with the SM or the ResMed CM in a randomized order. Ventilation parameters including tidal volume and peak airway pressure were measured using computer analysis software connected to the simulation manikin. Successful volume delivery was defined as delivery of 440-540 mL of tidal volume in accord with present cardiopulmonary resuscitation guidelines. BVM ventilation using the ResMed CM produced higher mean (± standard deviation) tidal volumes (452 ± 50 mL vs. 394 ± 113 mL, p = 0.014) and had a higher proportion of successful volume deliveries (65.3% vs. 26.7%, p < 0.001) than that using the SM. Peak airway pressure was higher in BVM ventilation using the ResMed CM (p = 0.035). Stomach insufflation did not occur during either method. Twenty-nine of the participants (96.7%) preferred BVM ventilation using the ResMed CM. BVM ventilations using ResMed CM resulted in a significantly higher proportion of successful volume deliveries meeting the currently recommended range of tidal volume. Clinical studies are needed to determine the value of the ResMed CM for BVM ventilation.

  4. Mechanical and thermal modeling of the SCALPEL mask

    International Nuclear Information System (INIS)

    Martin, C. J.; Semke, W. H.; Dicks, G. A.; Engelstad, R. L.; Lovell, E. G.; Liddle, J. A.; Novembre, A. E.

    1999-01-01

    Scattering with angular limitation projection electron-beam lithography (SCALPEL) is being developed by Lucent Technologies for sub-130 nm lithography. The mask fabrication and exposure processes produce mask distortions that result in pattern placement errors. In order to understand these distortions, and determine how to reduce them to levels consistent with the error budget, structural and heat transfer finite element models have been generated to simulate the mechanical and thermal response of the mask. In addition, sensitivity studies of the distortions due to key design parameters that may be used to refine the SCALPEL mask configuration have been conducted. (c) 1999 American Vacuum Society

  5. A respiratory mask for resting and exercising dogs.

    Science.gov (United States)

    Stavert, D M; Reischl, P; O'Loughlin, B J

    1982-02-01

    A respiratory face mask has been developed for use with unsedated beagles trained to run on a treadmill. The latex rubber mask, shaped to fit the animal's muzzle, incorporates two modified, commercially available, pulmonary valves for separating inspiratory and expiratory flows. The mask has a dead space of 30 cm3 and a flow resistance below 1 cmH2O . 1(-1) . s. The flexible mask is used to measure breath-by-breath respiratory variables over extended periods of time during rest and exercise.

  6. Communication masking in marine mammals: A review and research strategy.

    Science.gov (United States)

    Erbe, Christine; Reichmuth, Colleen; Cunningham, Kane; Lucke, Klaus; Dooling, Robert

    2016-02-15

    Underwater noise, whether of natural or anthropogenic origin, has the ability to interfere with the way in which marine mammals receive acoustic signals (i.e., for communication, social interaction, foraging, navigation, etc.). This phenomenon, termed auditory masking, has been well studied in humans and terrestrial vertebrates (in particular birds), but less so in marine mammals. Anthropogenic underwater noise seems to be increasing in parts of the world's oceans and concerns about associated bioacoustic effects, including masking, are growing. In this article, we review our understanding of masking in marine mammals, summarise data on marine mammal hearing as they relate to masking (including audiograms, critical ratios, critical bandwidths, and auditory integration times), discuss masking release processes of receivers (including comodulation masking release and spatial release from masking) and anti-masking strategies of signalers (e.g. Lombard effect), and set a research framework for improved assessment of potential masking in marine mammals. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

  7. Masking interrupts figure-ground signals in V1.

    Science.gov (United States)

    Lamme, Victor A F; Zipser, Karl; Spekreijse, Henk

    2002-10-01

    In a backward masking paradigm, a target stimulus is rapidly (figure-ground segregation can be recorded. Here, we recorded from awake macaque monkeys, engaged in a task where they had to detect figures from background in a pattern backward masking paradigm. We show that the V1 figure-ground signals are selectively and fully suppressed at target-mask intervals that psychophysically result in the target being invisible. Initial response transients, signalling the features that make up the scene, are not affected. As figure-ground modulations depend on feedback from extrastriate areas, these results suggest that masking selectively interrupts the recurrent interactions between V1 and higher visual areas.

  8. Estimation of the Ideal Binary Mask using Directional Systems

    DEFF Research Database (Denmark)

    Boldt, Jesper; Kjems, Ulrik; Pedersen, Michael Syskind

    2008-01-01

    The ideal binary mask is often seen as a goal for time-frequency masking algorithms trying to increase speech intelligibility, but the required availability of the unmixed signals makes it difficult to calculate the ideal binary mask in any real-life applications. In this paper we derive the theory...... and the requirements to enable calculations of the ideal binary mask using a directional system without the availability of the unmixed signals. The proposed method has a low complexity and is verified using computer simulation in both ideal and non-ideal setups showing promising results....

  9. Improvement of radiographs by means of optical masks

    International Nuclear Information System (INIS)

    Shishov, B.A.; Tereshenko, O.I.; Tyurin, E.I.

    1985-01-01

    High-gradient photographic material improves contrast and detectability of small details. Parts of the radiographs will however tend to be over- or underexposed. The recorded information can be improved by optical masks that modify the light in various parts of the image according to film sensitivity. For screen-film systems an immediate correction of the image by inserted masks results in a better recording of details while the well known detail filtering process improves only the visual detectability of the already recorded information. A special cassette for the generation of masks and a method for the calculation of correction factors for various screen combinations and masks types are described. (author)

  10. Simulation-based MDP verification for leading-edge masks

    Science.gov (United States)

    Su, Bo; Syrel, Oleg; Pomerantsev, Michael; Hagiwara, Kazuyuki; Pearman, Ryan; Pang, Leo; Fujimara, Aki

    2017-07-01

    For IC design starts below the 20nm technology node, the assist features on photomasks shrink well below 60nm and the printed patterns of those features on masks written by VSB eBeam writers start to show a large deviation from the mask designs. Traditional geometry-based fracturing starts to show large errors for those small features. As a result, other mask data preparation (MDP) methods have become available and adopted, such as rule-based Mask Process Correction (MPC), model-based MPC and eventually model-based MDP. The new MDP methods may place shot edges slightly differently from target to compensate for mask process effects, so that the final patterns on a mask are much closer to the design (which can be viewed as the ideal mask), especially for those assist features. Such an alteration generally produces better masks that are closer to the intended mask design. Traditional XOR-based MDP verification cannot detect problems caused by eBeam effects. Much like model-based OPC verification which became a necessity for OPC a decade ago, we see the same trend in MDP today. Simulation-based MDP verification solution requires a GPU-accelerated computational geometry engine with simulation capabilities. To have a meaningful simulation-based mask check, a good mask process model is needed. The TrueModel® system is a field tested physical mask model developed by D2S. The GPU-accelerated D2S Computational Design Platform (CDP) is used to run simulation-based mask check, as well as model-based MDP. In addition to simulation-based checks such as mask EPE or dose margin, geometry-based rules are also available to detect quality issues such as slivers or CD splits. Dose margin related hotspots can also be detected by setting a correct detection threshold. In this paper, we will demonstrate GPU-acceleration for geometry processing, and give examples of mask check results and performance data. GPU-acceleration is necessary to make simulation-based mask MDP verification

  11. CMOS foveal image sensor chip

    Science.gov (United States)

    Bandera, Cesar (Inventor); Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Xia, Shu (Inventor)

    2002-01-01

    A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

  12. Space division multiplexing chip-to-chip quantum key distribution

    DEFF Research Database (Denmark)

    Bacco, Davide; Ding, Yunhong; Dalgaard, Kjeld

    2017-01-01

    nodes of the quantum keys to their respective destinations. In this paper we present an experimental demonstration of a photonic integrated silicon chip quantum key distribution protocols based on space division multiplexing (SDM), through multicore fiber technology. Parallel and independent quantum...

  13. Influence of passivation process on chip performance

    NARCIS (Netherlands)

    Lu, J.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2009-01-01

    In this work, we have studied the performance of CMOS chips before and after a low temperature post-processing step. In order to prevent damage to the IC chips by the post-processing steps, a first passivation layers is needed on top of the IC chips. Two different passivation layer deposition

  14. Transcript profiling of two alfalfa genotypes with contrasting cell wall composition in stems using a cross-species platform: optimizing analysis by masking biased probes

    Directory of Open Access Journals (Sweden)

    Jung Hans-Joachim G

    2010-05-01

    Full Text Available Abstract Background The GeneChip® Medicago Genome Array, developed for Medicago truncatula, is a suitable platform for transcript profiling in tetraploid alfalfa [Medicago sativa (L. subsp. sativa]. However, previous research involving cross-species hybridization (CSH has shown that sequence variation between two species can bias transcript profiling by decreasing sensitivity (number of expressed genes detected and the accuracy of measuring fold-differences in gene expression. Results Transcript profiling using the Medicago GeneChip® was conducted with elongating stem (ES and post-elongation stem (PES internodes from alfalfa genotypes 252 and 1283 that differ in stem cell wall concentrations of cellulose and lignin. A protocol was developed that masked probes targeting inter-species variable (ISV regions of alfalfa transcripts. A probe signal intensity threshold was selected that optimized both sensitivity and accuracy. After masking for both ISV regions and previously identified single-feature polymorphisms (SFPs, the number of differentially expressed genes between the two genotypes in both ES and PES internodes was approximately 2-fold greater than the number detected prior to masking. Regulatory genes, including transcription factor and receptor kinase genes that may play a role in development of secondary xylem, were significantly over-represented among genes up-regulated in 252 PES internodes compared to 1283 PES internodes. Several cell wall-related genes were also up-regulated in genotype 252 PES internodes. Real-time quantitative RT-PCR of differentially expressed regulatory and cell wall-related genes demonstrated increased sensitivity and accuracy after masking for both ISV regions and SFPs. Over 1,000 genes that were differentially expressed in ES and PES internodes of genotypes 252 and 1283 were mapped onto putative orthologous loci on M. truncatula chromosomes. Clustering simulation analysis of the differentially expressed genes

  15. Actinic inspection of multilayer defects on EUV masks

    International Nuclear Information System (INIS)

    Barty, A; Liu, Y; Gullikson, E; Taylor, J S; Wood, O

    2005-01-01

    The production of defect-free mask blanks, and the development of techniques for inspecting and qualifying EUV mask blanks, remains a key challenge for EUV lithography. In order to ensure a reliable supply of defect-free mask blanks, it is necessary to develop techniques to reliably and accurately detect defects on un-patterned mask blanks. These inspection tools must be able to accurately detect all critical defects whilst simultaneously having the minimum possible false-positive detection rate. There continues to be improvement in high-speed non-actinic mask blank inspection tools, and it is anticipated that these tools can and will be used by industry to qualify EUV mask blanks. However, the outstanding question remains one of validating that non-actinic inspection techniques are capable of detecting all printable EUV defects. To qualify the performance of non-actinic inspection tools, a unique dual-mode EUV mask inspection system has been installed at the Advanced Light Source (ALS) synchrotron at Lawrence Berkeley National Laboratory. In high-speed inspection mode, whole mask blanks are scanned for defects using 13.5-nm wavelength light to identify and map all locations on the mask that scatter a significant amount of EUV light. In imaging, or defect review mode, a zone plate is placed in the reflected beam path to image a region of interest onto a CCD detector with an effective resolution on the mask of 100-nm or better. Combining the capabilities of the two inspection tools into one system provides the unique capability to determine the coordinates of native defects that can be used to compare actinic defect inspection with visible light defect inspection tools under commercial development, and to provide data for comparing scattering models for EUV mask defects

  16. Ultracold atoms on atom chips

    DEFF Research Database (Denmark)

    Krüger, Peter; Hofferberth, S.; Haller, E.

    2005-01-01

    Miniaturized potentials near the surface of atom chips can be used as flexible and versatile tools for the manipulation of ultracold atoms on a microscale. The full scope of possibilities is only accessible if atom-surface distances can be reduced to microns. We discuss experiments in this regime...

  17. FERMI multi-chip module

    CERN Multimedia

    This FERMI multi-chip module contains five million transistors. 25 000 of these modules will handle the flood of information through parts of the ATLAS and CMS detectors at the LHC. To select interesting events for recording, crucial decisions are taken before the data leaves the detector. FERMI modules are being developed at CERN in partnership with European industry.

  18. Tunable on chip optofluidic laser

    DEFF Research Database (Denmark)

    Bakal, Avraham; Vannahme, Christoph; Kristensen, Anders

    2015-01-01

    A chip scale tunable laser in the visible spectral band is realized by generating a periodic droplet array inside a microfluidic channel. Combined with a gain medium within the droplets, the periodic structure provides the optical feedback of the laser. By controlling the pressure applied to two...

  19. Chip & Cut Tests an Elastomeren

    OpenAIRE

    Euchler, Eric; Heinrich, Gert; Michael, Hannes; Gehde, Michael; Stocek, Radek; Kratina, Ondrej; Kipscholl, Reinhold

    2016-01-01

    Dieser Vortrag stellt einen neuartigen Prüfstand vor, mit welchem das Chip & Cut Verhalten von Elastomeren charakterisiert werden kann. Sowohl theoretischer Hintergrund als auch praktische Erkenntnisse werden diskutiert. Die Vorstellung der Praxisrelevanz dieser Untersuchungen steht im Fokus des Vortrags.

  20. Optical lattice on an atom chip

    DEFF Research Database (Denmark)

    Gallego, D.; Hofferberth, S.; Schumm, Thorsten

    2009-01-01

    Optical dipole traps and atom chips are two very powerful tools for the quantum manipulation of neutral atoms. We demonstrate that both methods can be combined by creating an optical lattice potential on an atom chip. A red-detuned laser beam is retroreflected using the atom chip surface as a high......-quality mirror, generating a vertical array of purely optical oblate traps. We transfer thermal atoms from the chip into the lattice and observe cooling into the two-dimensional regime. Using a chip-generated Bose-Einstein condensate, we demonstrate coherent Bloch oscillations in the lattice....

  1. Coherent diffractive imaging using randomly coded masks

    Energy Technology Data Exchange (ETDEWEB)

    Seaberg, Matthew H., E-mail: seaberg@slac.stanford.edu [CNRS and D.I., UMR 8548, École Normale Supérieure, 45 Rue d' Ulm, 75005 Paris (France); Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); D' Aspremont, Alexandre [CNRS and D.I., UMR 8548, École Normale Supérieure, 45 Rue d' Ulm, 75005 Paris (France); Turner, Joshua J. [Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States)

    2015-12-07

    We experimentally demonstrate an extension to coherent diffractive imaging that encodes additional information through the use of a series of randomly coded masks, removing the need for typical object-domain constraints while guaranteeing a unique solution to the phase retrieval problem. Phase retrieval is performed using a numerical convex relaxation routine known as “PhaseCut,” an iterative algorithm known for its stability and for its ability to find the global solution, which can be found efficiently and which is robust to noise. The experiment is performed using a laser diode at 532.2 nm, enabling rapid prototyping for future X-ray synchrotron and even free electron laser experiments.

  2. Masking properties of ceramics for veneer restorations.

    Science.gov (United States)

    Skyllouriotis, Andreas L; Yamamoto, Hideo L; Nathanson, Dan

    2017-10-01

    The translucency and opacity of ceramics play a significant role in emulating the natural color of teeth, but studies of the masking properties and limitations of dental ceramics when used as monolayer restorations are lacking. The purpose of this in vitro study was to determine the translucency of 6 materials used for veneer restorations by assessing their translucency parameters (TPs), contrast ratios (CRs), and potential to mask dark tooth colors. Ten square- or disk-shaped specimens (0.5-mm thickness, shade A2) were fabricated from Vitablocks Mark II (VMII; Vita Zahnfabrik), IPS e.max CAD LT (EMXC LT; Ivoclar Vivadent AG), IPS e.max CAD HT (EMXC HT; Ivoclar Vivadent AG), IPS Empress CAD LT (EMP LT; Ivoclar Vivadent AG), IPS e.max Press LT (EMXP LT; Ivoclar Vivadent AG), and CZR (CZR; Kuraray Noritake Dental Inc). Their luminance (Y) values over black and over white tiles were measured, followed by their color (CIELab) over black tiles and white tiles and shaded A2 (control group), A3.5, A4, and B4 acrylic resin blocks. All measurements were performed using a spectrophotometer in 2 different areas on each specimen. Then CRs, TPs, and color differences (over shaded backgrounds) were determined. Data were subjected to 1-way and 2-way ANOVA (α=.05) for analysis. Mean CR values of EMXP LT were significantly higher than those of the other tested materials, whereas VMII and EMXC HT had the lowest values (Pmasking properties against the A4 background. The color differences of most tested ceramics were more acceptable when tested against the B4 background (ΔE*≤3.3). Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  3. Prevalence and persistence of masked hypertension in treated hypertensive patients

    NARCIS (Netherlands)

    Verberk, Willem J.; Thien, Theo; Kroon, Abraham A.; Lenders, Jacques W. M.; van Montfrans, Gert A.; Smit, Andries J.; de Leeuw, Peter W.

    2007-01-01

    Background: Masked hypertension (MH) is defined as a normal blood pressure in the physician's office and an elevated blood pressure when measured out-of-office. The cause of MH may be termed the masked hypertension effect (MHE), and is not restricted to blood-pressure (BP) values around the

  4. Prevalence and persistence of masked hypertension in treated hypertensive patients.

    NARCIS (Netherlands)

    Verberk, W.J.; Thien, Th.; Kroon, A.A.; Lenders, J.W.M.; Montfrans, G.A. van; Smit, A.J.; Leeuw, P.W. de

    2007-01-01

    BACKGROUND: Masked hypertension (MH) is defined as a normal blood pressure in the physician's office and an elevated blood pressure when measured out-of-office. The cause of MH may be termed the masked hypertension effect (MHE), and is not restricted to blood-pressure (BP) values around the

  5. Prevalence and persistence of masked hypertension in treated hypertensive patients

    NARCIS (Netherlands)

    Verberk, Willem J.; Thien, Theo; Kroon, Abraham A.; Lenders, Jacques W. M.; van Montfrans, Gert A.; Smit, Andries J.; de Leeuw, Peter W.

    2007-01-01

    BACKGROUND: Masked hypertension (MH) is defined as a normal blood pressure in the physician's office and an elevated blood pressure when measured out-of-office. The cause of MH may be termed the masked hypertension effect (MHE), and is not restricted to blood-pressure (BP) values around the

  6. Self-masking: Listening during vocalization. Normal hearing.

    Science.gov (United States)

    Borg, Erik; Bergkvist, Christina; Gustafsson, Dan

    2009-06-01

    What underlying mechanisms are involved in the ability to talk and listen simultaneously and what role does self-masking play under conditions of hearing impairment? The purpose of the present series of studies is to describe a technique for assessment of masked thresholds during vocalization, to describe normative data for males and females, and to focus on hearing impairment. The masking effect of vocalized [a:] on narrow-band noise pulses (250-8000 Hz) was studied using the maximum vocalization method. An amplitude-modulated series of sound pulses, which sounded like a steam engine, was masked until the criterion of halving the perceived pulse rate was reached. For masking of continuous reading, a just-follow-conversation criterion was applied. Intra-session test-retest reproducibility and inter-session variability were calculated. The results showed that female voices were more efficient in masking high frequency noise bursts than male voices and more efficient in masking both a male and a female test reading. The male had to vocalize 4 dBA louder than the female to produce the same masking effect on the test reading. It is concluded that the method is relatively simple to apply and has small intra-session and fair inter-session variability. Interesting gender differences were observed.

  7. Failed tracheal intubation using a laryngoscope and intubating laryngeal mask.

    Science.gov (United States)

    Asai, T; Hirose, T; Shingu, K

    2000-04-01

    To report unexpected failed tracheal intubation using a laryngoscope and an intubating laryngeal mask, and difficult ventilation via a facemask, laryngeal mask and intubating laryngeal mask, in a patient with an unrecognized lingual tonsillar hypertrophy. A 63-yr-old woman, who had undergone clipping of an aneurysm seven weeks previously, was scheduled for ventriculo-peritoneal shunt. At the previous surgery, there had been no difficulty in ventilation or in tracheal intubation. Her trachea remained intubated nasally for 11 days after surgery. Preoperatively, her consciousness was impaired. There were no restrictions in head and neck movements or mouth opening. The thyromental distance was 7 cm. After induction of anesthesia, manual ventilation via a facemask with a Guedel airway was suboptimal and the chest expanded insufficiently. At laryngoscopy using a Macintosh or McCoy device, only the tip of the epiglottis, but not the glottis, could be seen, and tracheal intubation failed. There was a partial obstruction during manual ventilation through either the intubating laryngeal mask or conventional laryngeal mask; intubation through each device failed. Digital examination of the pharynx, after removal of the laryngeal mask, indicated a mass occupying the vallecula. Lingual tonsillar hypertrophy (1 x 1 x 2 cm) was found to be the cause of the failure. Awake fibrescope-aided tracheal intubation was accomplished. Unexpected lingual tonsillar hypertrophy can cause both ventilation and tracheal intubation difficult, and neither the laryngeal mask nor intubating laryngeal mask may be helpful in the circumstances.

  8. Dead space variability of face masks for valved holding chambers.

    Science.gov (United States)

    Amirav, Israel; Newhouse, Michael T

    2008-03-01

    Valved holding chambers with masks are commonly used to deliver inhaled medications to young children with asthma. Optimal mask properties such as their dead space volume have received little attention. The smaller the mask the more likely it is that a greater proportion of the dose in the VHC will be inhaled with each breath, thus speeding VHC emptying and improving overall aerosol delivery efficiency and dose. Masks may have different DSV and thus different performance. To compare both physical dead space and functional dead space of different face masks under various applied pressures. The DSV of three commonly used face masks of VHCs was measured by water displacement both under various pressures (to simulate real-life application, dynamic DSV) and under no pressure (static DSV). There was a great variability of both static and dynamic dead space among various face mask for VHCs, which is probably related to their flexibility. Different masks have different DSV characteristics. This variability should be taken into account when comparing the clinical efficacy of various VHCs.

  9. Ni-Al Alloys as Alternative EUV Mask Absorber

    Directory of Open Access Journals (Sweden)

    Vu Luong

    2018-03-01

    Full Text Available Extreme ultraviolet (EUV lithography is being industrialized as the next candidate printing technique for high-volume manufacturing of scaled down integrated circuits. At mask level, the combination of EUV light at oblique incidence, absorber thickness, and non-uniform mirror reflectance through incidence angle, creates photomask-induced imaging aberrations, known as mask 3D (M3D effects. A possible mitigation for the M3D effects in the EUV binary intensity mask (BIM, is to use mask absorber materials with high extinction coefficient κ and refractive coefficient n close to unity. We propose nickel aluminide alloys as a candidate BIM absorber material, and characterize them versus a set of specifications that a novel EUV mask absorber must meet. The nickel aluminide samples have reduced crystallinity as compared to metallic nickel, and form a passivating surface oxide layer in neutral solutions. Composition and density profile are investigated to estimate the optical constants, which are then validated with EUV reflectometry. An oxidation-induced Al L2 absorption edge shift is observed, which significantly impacts the value of n at 13.5 nm wavelength and moves it closer to unity. The measured optical constants are incorporated in an accurate mask model for rigorous simulations. The M3D imaging impact of the nickel aluminide alloy mask absorbers, which predict significant M3D reduction in comparison to reference absorber materials. In this paper, we present an extensive experimental methodology flow to evaluate candidate mask absorber materials.

  10. Energy enhancer for mask based laser materials processing

    DEFF Research Database (Denmark)

    Bastue, Jens; Olsen, Flemmming Ove

    1996-01-01

    A device capable of drastically improving the energy efficiency of present mask based laser materials processing systems is presented. Good accordance between experiments and simulations for a TEA-CO2 laser system designed for laser marking has been demonstrated. The energy efficiency may...... be improved with a factor of 2 - 4 for typical mask transmittances between 10 - 40%....

  11. My Other Half Manifested in Mask-Making

    Science.gov (United States)

    Abel, Xanthippi

    2010-01-01

    Every fall season, each grade level of Rowland Hall St. Mark's Lower School in Salt Lake City, Utah, completes a mask-making project to be featured in a schoolwide parade. This sparked an opportunity to incorporate the fourth-grade unit of realistic and observational drawing with mask making. In this article, the author describes how her students…

  12. GABAA agonist reduces visual awareness : a masking-EEG experiment

    NARCIS (Netherlands)

    van Loon, Anouk M; Scholte, H Steven; van Gaal, Simon; van der Hoort, Björn J J; Lamme, Victor A F

    Consciousness can be manipulated in many ways. Here, we seek to understand whether two such ways, visual masking and pharmacological intervention, share a common pathway in manipulating visual consciousness. We recorded EEG from human participants who performed a backward-masking task in which they

  13. Reusable High Aspect Ratio 3-D Nickel Shadow Mask

    Science.gov (United States)

    Shandhi, M.M.H.; Leber, M.; Hogan, A.; Warren, D.J.; Bhandari, R.; Negi, S.

    2017-01-01

    Shadow Mask technology has been used over the years for resistless patterning and to pattern on unconventional surfaces, fragile substrate and biomaterial. In this work, we are presenting a novel method to fabricate high aspect ratio (15:1) three-dimensional (3D) Nickel (Ni) shadow mask with vertical pattern length and width of 1.2 mm and 40 μm respectively. The Ni shadow mask is 1.5 mm tall and 100 μm wide at the base. The aspect ratio of the shadow mask is 15. Ni shadow mask is mechanically robust and hence easy to handle. It is also reusable and used to pattern the sidewalls of unconventional and complex 3D geometries such as microneedles or neural electrodes (such as the Utah array). The standard Utah array has 100 active sites at the tip of the shaft. Using the proposed high aspect ratio Ni shadow mask, the Utah array can accommodate 300 active sites, 200 of which will be along and around the shaft. The robust Ni shadow mask is fabricated using laser patterning and electroplating techniques. The use of Ni 3D shadow mask will lower the fabrication cost, complexity and time for patterning out-of-plane structures. PMID:29056835

  14. Mask Materials and Designs for Extreme Ultra Violet Lithography

    Science.gov (United States)

    Kim, Jung Sik; Ahn, Jinho

    2018-03-01

    Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.

  15. Masked hypertension: evidence of the need to treat

    NARCIS (Netherlands)

    Ogedegbe, Gbenga; Agyemang, Charles; Ravenell, Joseph E.

    2010-01-01

    The diagnosis of masked hypertension has been made easier with the widespread availability of home blood pressure monitoring devices with levels of accuracy comparable to ambulatory blood pressure monitoring. The negative impact of masked hypertension on cardiovascular morbidity and mortality is

  16. Migration from full-head mask to "open-face" mask for immobilization of patients with head and neck cancer.

    Science.gov (United States)

    Li, Guang; Lovelock, D Michael; Mechalakos, James; Rao, Shyam; Della-Biancia, Cesar; Amols, Howard; Lee, Nancy

    2013-09-06

    To provide an alternative device for immobilization of the head while easing claustrophobia and improving comfort, an "open-face" thermoplastic mask was evaluated using video-based optical surface imaging (OSI) and kilovoltage (kV) X-ray radiography. A three-point thermoplastic head mask with a precut opening and reinforced strips was developed. After molding, it provided sufficient visible facial area as the region of interest for OSI. Using real-time OSI, the head motion of ten volunteers in the new mask was evaluated during mask locking and 15minutes lying on the treatment couch. Using a nose mark with reference to room lasers, forced head movement in open-face and full-head masks (with a nose hole) was compared. Five patients with claustrophobia were immobilized with open-face masks, set up using OSI and kV, and treated in 121 fractions, in which 61 fractions were monitored during treatment using real-time OSI. With the open-face mask, head motion was found to be 1.0 ± 0.6 mm and 0.4° ± 0.2° in volunteers during the experiment, and 0.8 ± 0.3 mm and 0.4° ± 0.2° in patients during treatment. These agree with patient motion calculated from pre-/post-treatment OSI and kV data using different anatomical landmarks. In volunteers, the head shift induced by mask-locking was 2.3 ± 1.7 mm and 1.8° ± 0.6°, and the range of forced movements in the open-face and full-head masks were found to be similar. Most (80%) of the volunteers preferred the open-face mask to the full-head mask, while claustrophobic patients could only tolerate the open-face mask. The open-face mask is characterized for its immobilization capability and can immobilize patients sufficiently (< 2 mm) during radiotherapy. It provides a clinical solution to the immobilization of patients with head and neck (HN) cancer undergoing radiotherapy, and is particularly beneficial for claustrophobic patients. This new open-face mask is readily adopted in radiotherapy clinic as a superior alternative to

  17. The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

    Science.gov (United States)

    Hector, Scott

    2005-11-01

    The extension of optical projection lithography through immersion to patterning features with half pitch face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper summarizes the challenging business model for mask equipment suppliers and highlight government support for mask equipment and materials development.

  18. New Y2K problem for mask making (or, Surviving mask data problems after 2000)

    Science.gov (United States)

    Sturgeon, Roger

    1999-08-01

    The Y2K problem has analogies in the mask-making world. With the Y2K problem where a date field has just two bytes for the year, there are some cases of mask-making data in which the file size cannot exceed 2 gigabytes. Where a two-digit date field can only unambiguously use a limited range of values (00 to 99), design coordinates can only cover a range of about 4 billion values, which is getting a little uncomfortable for all of the new applications. In retrospect, with a degree of foresight and planning the Y2K date problem could have been easily solved if new encodings had been allowed in the two- digit field. Likewise, in the mask-making industry we currently have the opportunity to achieve far superior data compression if we allow some new forms of data encoding in our data. But this will require universal agreement. The correct way to look at the Y2K problem is that some information was left out of the data stream due to common understandings that made the additional information superfluous. But as the year 2000 approaches, it has become widely recognized that missing data needs to be stated explicitly, and any ambiguities in the representation of the data will need to be eliminated with precise specifications. In a similar way, old mask data generation methods have had numerous flaws that we have been able to ignore for a long time. But now is the time to fix theses flaws and provide extended capabilities. What is not yet clear is if the old data generation methods can be modified to meet these developing needs. Unilateral action is not likely to lead to much progress, so some united effort is required by all interested parties if success is to be achieved in the brief time that remains.

  19. X-ray face mask and chest shield device

    International Nuclear Information System (INIS)

    Moti, S.

    1981-01-01

    A protective face mask is designed to shield an x-ray technician or machine operator primarily from random secondary or scatter x-rays deflected towards his face, head and neck by the table, walls, equipment and other reflecting elements in an x-ray room or chamber. The face mask and chest shield device can be mounted on a patient's shoulders in reverse attitude to protect the back of a patient's head and neck from the x-ray beam. The face mask is relatively or substantially transparent and contains lead in combination with a plastic ionomer or comonomer, which to a degree absorbs or resists penetration of the random deflected secondary or scatter x-rays or the x-ray beam through the mask. The face mask is removably attachable to the chest shield for easy application of the device to and support upon the shoulders of the technician or the patient. (author)

  20. Comodulation masking release in bit-rate reduction systems

    DEFF Research Database (Denmark)

    Vestergaard, Martin David; Rasmussen, Karsten Bo; Poulsen, Torben

    1999-01-01

    It has been suggested that the level dependence of the upper masking slope be utilized in perceptual models in bit-rate reduction systems. However, comodulation masking release (CMR) phenomena lead to a reduction of the masking effect when a masker and a probe signal are amplitude modulated...... with the same frequency. In bit-rate reduction systems the masker would be the audio signal and the probe signal would represent the quantization noise. Masking curves have been determined for sinusoids and 1-Bark-wide noise maskers in order to investigate the risk of CMR, when quantizing depths are fixed...... in accordance with psycho-acoustical principles. Masker frequencies of 500 Hz, 1 kHz, and 2 kHz have been investigated, and the masking of pure tone probes has been determined in the first four 1/3 octaves above the masker. Modulation frequencies between 6 and 20 Hz were used with a modulation depth of 0...

  1. MODELING SPECTRAL AND TEMPORAL MASKING IN THE HUMAN AUDITORY SYSTEM

    DEFF Research Database (Denmark)

    Dau, Torsten; Jepsen, Morten Løve; Ewert, Stephan D.

    2007-01-01

    An auditory signal processing model is presented that simulates psychoacoustical data from a large variety of experimental conditions related to spectral and temporal masking. The model is based on the modulation filterbank model by Dau et al. [J. Acoust. Soc. Am. 102, 2892-2905 (1997)] but inclu......An auditory signal processing model is presented that simulates psychoacoustical data from a large variety of experimental conditions related to spectral and temporal masking. The model is based on the modulation filterbank model by Dau et al. [J. Acoust. Soc. Am. 102, 2892-2905 (1997...... was tested in conditions of tone-in-noise masking, intensity discrimination, spectral masking with tones and narrowband noises, forward masking with (on- and off-frequency) noise- and pure-tone maskers, and amplitude modulation detection using different noise carrier bandwidths. One of the key properties...

  2. New method of 2-dimensional metrology using mask contouring

    Science.gov (United States)

    Matsuoka, Ryoichi; Yamagata, Yoshikazu; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2008-10-01

    We have developed a new method of accurately profiling and measuring of a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, this edge detection method is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. This method realizes two-dimensional metrology for refined pattern that had been difficult to measure conventionally by utilizing high precision contour profile. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. This is to say, demands for quality is becoming strenuous because of enormous quantity of data growth with increasing of refined pattern on photo mask manufacture. In the result, massive amount of simulated error occurs on mask inspection that causes lengthening of mask production and inspection period, cost increasing, and long delivery time. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method of a DFM solution using two-dimensional metrology for refined pattern.

  3. Objective measures of binaural masking level differences and comodulation masking release based on late auditory evoked potentials

    DEFF Research Database (Denmark)

    Epp, Bastian; Yasin, Ifat; Verhey, Jesko L.

    2013-01-01

    at a fixed physical intensity is varied by introducing auditory cues of (i) interaural target signal phase disparity and (ii) coherent masker level fluctuations in different frequency regions. In agreement with previous studies, psychoacoustical experiments showed that both stimulus manipulations result......The audibility of important sounds is often hampered due to the presence of other masking sounds. The present study investigates if a correlate of the audibility of a tone masked by noise is found in late auditory evoked potentials measured from human listeners. The audibility of the target sound...... in a masking release (i: binaural masking level difference; ii: comodulation masking release) compared to a condition where those cues are not present. Late auditory evoked potentials (N1, P2) were recorded for the stimuli at a constant masker level, but different signal levels within the same set of listeners...

  4. Simulation based mask defect repair verification and disposition

    Science.gov (United States)

    Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

    2009-10-01

    As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple

  5. Airflow-Restricting Mask Reduces Acute Performance in Resistance Exercise

    Directory of Open Access Journals (Sweden)

    Yuri L. Motoyama

    2016-09-01

    Full Text Available Background: The aim of this study was to compare the number of repetitions to volitional failure, the blood lactate concentration, and the perceived exertion to resistance training with and without an airflow-restricting mask. Methods: Eight participants participated in a randomized, counterbalanced, crossover study. Participants were assigned to an airflow-restricting mask group (MASK or a control group (CONT and completed five sets of chest presses and parallel squats until failure at 75% one-repetition-maximum test (1RM with 60 s of rest between sets. Ratings of perceived exertion (RPEs, blood lactate concentrations (Lac−, and total repetitions were taken after the training session. Results: MASK total repetitions were lower than those of the CONT, and (Lac− and MASK RPEs were higher than those of the CONT in both exercises. Conclusions: We conclude that an airflow-restricting mask in combination with resistance training increase perceptions of exertion and decrease muscular performance and lactate concentrations when compared to resistance training without this accessory. This evidence shows that the airflow-restricting mask may change the central nervous system and stop the exercise beforehand to prevent some biological damage.

  6. MASKED AREAS IN SHEAR PEAK STATISTICS: A FORWARD MODELING APPROACH

    International Nuclear Information System (INIS)

    Bard, D.; Kratochvil, J. M.; Dawson, W.

    2016-01-01

    The statistics of shear peaks have been shown to provide valuable cosmological information beyond the power spectrum, and will be an important constraint of models of cosmology in forthcoming astronomical surveys. Surveys include masked areas due to bright stars, bad pixels etc., which must be accounted for in producing constraints on cosmology from shear maps. We advocate a forward-modeling approach, where the impacts of masking and other survey artifacts are accounted for in the theoretical prediction of cosmological parameters, rather than correcting survey data to remove them. We use masks based on the Deep Lens Survey, and explore the impact of up to 37% of the survey area being masked on LSST and DES-scale surveys. By reconstructing maps of aperture mass the masking effect is smoothed out, resulting in up to 14% smaller statistical uncertainties compared to simply reducing the survey area by the masked area. We show that, even in the presence of large survey masks, the bias in cosmological parameter estimation produced in the forward-modeling process is ≈1%, dominated by bias caused by limited simulation volume. We also explore how this potential bias scales with survey area and evaluate how much small survey areas are impacted by the differences in cosmological structure in the data and simulated volumes, due to cosmic variance

  7. Achromatic Focal Plane Mask for Exoplanet Imaging Coronagraphy

    Science.gov (United States)

    Newman, Kevin Edward; Belikov, Ruslan; Guyon, Olivier; Balasubramanian, Kunjithapatham; Wilson, Dan

    2013-01-01

    Recent advances in coronagraph technologies for exoplanet imaging have achieved contrasts close to 1e10 at 4 lambda/D and 1e-9 at 2 lambda/D in monochromatic light. A remaining technological challenge is to achieve high contrast in broadband light; a challenge that is largely limited by chromaticity of the focal plane mask. The size of a star image scales linearly with wavelength. Focal plane masks are typically the same size at all wavelengths, and must be sized for the longest wavelength in the observational band to avoid starlight leakage. However, this oversized mask blocks useful discovery space from the shorter wavelengths. We present here the design, development, and testing of an achromatic focal plane mask based on the concept of optical filtering by a diffractive optical element (DOE). The mask consists of an array of DOE cells, the combination of which functions as a wavelength filter with any desired amplitude and phase transmission. The effective size of the mask scales nearly linearly with wavelength, and allows significant improvement in the inner working angle of the coronagraph at shorter wavelengths. The design is applicable to almost any coronagraph configuration, and enables operation in a wider band of wavelengths than would otherwise be possible. We include initial results from a laboratory demonstration of the mask with the Phase Induced Amplitude Apodization coronagraph.

  8. New method of contour-based mask-shape compiler

    Science.gov (United States)

    Matsuoka, Ryoichi; Sugiyama, Akiyuki; Onizawa, Akira; Sato, Hidetoshi; Toyoda, Yasutaka

    2007-10-01

    We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

  9. Comparison of Aerosol Delivery by Face Mask and Tracheostomy Collar.

    Science.gov (United States)

    Bugis, Alaa A; Sheard, Meryl M; Fink, James B; Harwood, Robert J; Ari, Arzu

    2015-09-01

    The purpose of this study was to compare the performance of a tracheostomy collar, Wright mask, and aerosol mask attached to a jet nebulizer in facilitating aerosolized medication delivery to the lungs. We also compared albuterol delivery with open versus closed fenestration and determined the effect of inspiratory-expiratory ratio (I:E) on aerosol delivery. Albuterol (2.5 mg/3 mL) was administered to an in vitro model consisting of an adult teaching mannequin extrathoracic and upper airway with stoma intubated with an 8-mm fenestrated tracheostomy tube. The cuff was deflated. A collecting filter at the level of the bronchi was connected to a breathing simulator at a tidal volume of 400 mL, breathing frequency of 20 breaths/min, and I:E of 2:1 and 1:2. A jet nebulizer was operated with O2 at 8 L/min. Each interface was tested in triplicate. The flow was discontinued at the end of nebulization. For each test, the nebulizer was attached to a tracheostomy collar with the fenestration open or closed, a Wright mask, or an aerosol mask. Drug was analyzed by spectrophotometry (276 nm). A paired t test and analysis of variance were performed (P mask (4.1 ± 0.6%) and aerosol mask (3.5 ± 0.04%) were both less than with the tracheostomy collar under either condition (P mask (7.2 ± 0.6%), and aerosol mask (6.1 ± 0.5%). In an adult tracheostomy model, the tracheostomy collar delivered more aerosol to the bronchi than the Wright or aerosol mask. An I:E of 2:1 caused greater aerosol deposition compared with an I:E of 1:2. During aerosol administration via a tracheostomy collar, closing the fenestration improved aerosol delivery. Copyright © 2015 by Daedalus Enterprises.

  10. Experiment list: SRX122465 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 6 || chip antibody=Relb || treatment=LPS || time=120 min || chip antibody manufacturer 1=Bethyl || chip anti...body catalog number 1=A302-183A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2

  11. Experiment list: SRX122555 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available chip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip anti...body catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-7

  12. Integration of mask and silicon metrology in DFM

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2009-03-01

    We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

  13. Aperture Mask for Unambiguous Parity Determination in Long Wavelength Imagers

    Science.gov (United States)

    Bos, Brent

    2011-01-01

    A document discusses a new parity pupil mask design that allows users to unambiguously determine the image space coordinate system of all the James Webb Space Telescope (JWST) science instruments by using two out-of-focus images. This is an improvement over existing mask designs that could not completely eliminate the coordinate system parity ambiguity at a wavelength of 5.6 microns. To mitigate the problem of how the presence of diffraction artifacts can obscure the pupil mask detail, this innovation has been created with specifically designed edge features so that the image space coordinate system parity can be determined in the presence of diffraction, even at long wavelengths.

  14. Propagation of resist heating mask error to wafer level

    Science.gov (United States)

    Babin, S. V.; Karklin, Linard

    2006-10-01

    As technology is approaching 45 nm and below the IC industry is experiencing a severe product yield hit due to rapidly shrinking process windows and unavoidable manufacturing process variations. Current EDA tools are unable by their nature to deliver optimized and process-centered designs that call for 'post design' localized layout optimization DFM tools. To evaluate the impact of different manufacturing process variations on final product it is important to trace and evaluate all errors through design to manufacturing flow. Photo mask is one of the critical parts of this flow, and special attention should be paid to photo mask manufacturing process and especially to mask tight CD control. Electron beam lithography (EBL) is a major technique which is used for fabrication of high-end photo masks. During the writing process, resist heating is one of the sources for mask CD variations. Electron energy is released in the mask body mainly as heat, leading to significant temperature fluctuations in local areas. The temperature fluctuations cause changes in resist sensitivity, which in turn leads to CD variations. These CD variations depend on mask writing speed, order of exposure, pattern density and its distribution. Recent measurements revealed up to 45 nm CD variation on the mask when using ZEP resist. The resist heating problem with CAR resists is significantly smaller compared to other types of resists. This is partially due to higher resist sensitivity and the lower exposure dose required. However, there is no data yet showing CD errors on the wafer induced by CAR resist heating on the mask. This effect can be amplified by high MEEF values and should be carefully evaluated at 45nm and below technology nodes where tight CD control is required. In this paper, we simulated CD variation on the mask due to resist heating; then a mask pattern with the heating error was transferred onto the wafer. So, a CD error on the wafer was evaluated subject to only one term of the

  15. Rheumatic masks of plasma cell dyscrasias

    Directory of Open Access Journals (Sweden)

    Vladimir Ivanovich Vasilyev

    2012-01-01

    Full Text Available Objective: to consider clinical practice problems in the differential diagnosis of different types of plasma cell dyscrasias (PCD. Subjects and methods. Fourteen patients (8 men and 6 women aged 52±12 years, in whom rheumatic diseases (RD were ruled out and who were diagnosed as having primary PCD: different types of myeloma in 7 patients, myeloma + AL-amyloidosis in 2, AL-amyloidosis in 3, and Waldenstrom’s macroglobulinemia in 2, were examined. Results and discussion. The most common maldiagnosed RDs in patients with PCD were seronegative rheumatoid arthritis (RA, systemic lupus erythematosus, Sjogren’s disease, and different forms of vasculitis. The most frequent masks of RD were kidney (78% and osteoarticular system (64% lesions, vascular disorders (36%, peripheral polyneuropathies (36%, and enlarged salivary glands with xerostomia (28.5%. Serum and urine immunochemical study should be performed in all patients who have clinical manifestations of seropositive RA, spondyloarthritis, intensive bone pain syndrome, ulceronecrotic vasculitis, enlarged submandibular salivary glands with macroglossia in the absence of markers of autoimmune disease for the timely diagnosis of PCD and the exclusion of RD. The paper estimates the sensitivity and specificity of main methods used to diagnose different types of PCD.

  16. Addressing terrain masking in orbital reconnaissance

    Science.gov (United States)

    Mehta, Sharad; Cico, Luke

    2012-06-01

    During aerial orbital reconnaissance, a sensor system is mounted on an airborne platform for imaging a region on the ground. The latency between the image acquisition and delivery of information to the end-user is critical and must be minimized. Due to fine ground pixel resolution and a large field-of-view for wide-area surveillance applications, a massive volume of data is gathered and imagery products are formed using a real-time multi-processor system. The images are taken at oblique angles, stabilized and ortho-rectified. The line-of-sight of the sensor to the ground is often interrupted by terrain features such as mountains or tall structures as depicted in Figure1. The ortho-rectification process renders the areas hidden from the line-of sight of the sensor with spurious information. This paper discusses an approach for addressing terrain masking in size, weight, and power (SWaP) and memory-restricted onboard processing systems.

  17. Laser etching of polymer masked leadframes

    Science.gov (United States)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  18. Infrared Signature Masking by Air Plasma Radiation

    Science.gov (United States)

    Kruger, Charles H.; Laux, C. O.

    2001-01-01

    This report summarizes the results obtained during a research program on the infrared radiation of air plasmas conducted in the High Temperature Gasdynamics Laboratory at Stanford University under the direction of Professor Charles H. Kruger, with Dr. Christophe O. Laux as Associate Investigator. The goal of this research was to investigate the masking of infrared signatures by the air plasma formed behind the bow shock of high velocity missiles. To this end, spectral measurements and modeling were made of the radiation emitted between 2.4 and 5.5 micrometers by an atmospheric pressure air plasma in chemical and thermal equilibrium at a temperature of approximately 3000 K. The objective was to examine the spectral emission of air species including nitric oxide, atomic oxygen and nitrogen lines, molecular and atomic continua, as well as secondary species such as water vapor or carbon dioxide. The cold air stream injected in the plasma torch contained approximately 330 parts per million of CO2, which is the natural CO2 concentration in atmospheric air at room temperatures, and a small amount of water vapor with an estimated mole fraction of 3.8x10(exp -4).

  19. Optimized furosemide taste masked orally disintegrating tablets

    Directory of Open Access Journals (Sweden)

    Mohamed Abbas Ibrahim

    2017-11-01

    Full Text Available Optimized orally disintegrating tablets (ODTs containing furosemide (FUR were prepared by direct compression method. Two factors, three levels (32 full factorial design was used to optimize the effect of taste masking agent (Eudragit E100; X1 and superdisintegarant; croscarmellose sodium (CCS; X2 on tablet properties. A composite was prepared by mixing ethanolic solution of FUR and Eudragit E100 with mannitol prior to mixing with other tablet ingredients. The prepared ODTs were characterized for their FUR content, hardness, friability and wetting time. The optimized ODT formulation (F1 was evaluated in term of palatability parameters and the in vivo disintegration. The manufactured ODTs were complying with the pharmacopeia guidelines regarding hardness, friability, weight variation and content. Eudragit E100 had a very slightly enhancing effect on tablets disintegration. However, the effects of both Eudragit E100 (X1 and CCS (X2 on ODTs disintegration time (Y1 were insignificant (p > 0.05. Moreover, X1 exhibited antagonistic effect on the dissolution after 5 and 30 min (D5 and D30, respectively, but only its effect on D30 is significant (p = 0.0004. Furthermore, the optimized ODTs formula showed good to acceptable taste in term of palatability, and in vivo disintegration time of this formula was about 10 s.

  20. How do different brands of size 1 laryngeal mask airway compare with face mask ventilation in a dedicated laryngeal mask airway teaching manikin?

    Science.gov (United States)

    Tracy, Mark Brian; Priyadarshi, Archana; Goel, Dimple; Lowe, Krista; Huvanandana, Jacqueline; Hinder, Murray

    2018-05-01

    International neonatal resuscitation guidelines recommend the use of laryngeal mask airway (LMA) with newborn infants (≥34 weeks' gestation or >2 kg weight) when bag-mask ventilation (BMV) or tracheal intubation is unsuccessful. Previous publications do not allow broad LMA device comparison. To compare delivered ventilation of seven brands of size 1 LMA devices with two brands of face mask using self-inflating bag (SIB). 40 experienced neonatal staff provided inflation cycles using SIB with positive end expiratory pressure (PEEP) (5 cmH 2 O) to a specialised newborn/infant training manikin randomised for each LMA and face mask. All subjects received prior education in LMA insertion and BMV. 12 415 recorded inflations for LMAs and face masks were analysed. Leak detected was lowest with i-gel brand, with a mean of 5.7% compared with face mask (triangular 42.7, round 35.7) and other LMAs (45.5-65.4) (p<0.001). Peak inspiratory pressure was higher with i-gel, with a mean of 28.9 cmH 2 O compared with face mask (triangular 22.8, round 25.8) and other LMAs (14.3-22.0) (p<0.001). PEEP was higher with i-gel, with a mean of 5.1 cmH 2 O compared with face mask (triangular 3.0, round 3.6) and other LMAs (0.6-2.6) (p<0.001). In contrast to other LMAs examined, i-gel had no insertion failures and all users found i-gel easy to use. This study has shown dramatic performance differences in delivered ventilation, mask leak and ease of use among seven different brands of LMA tested in a manikin model. This coupled with no partial or complete insertion failures and ease of use suggests i-gel LMA may have an expanded role with newborn resuscitation as a primary resuscitation device. © Article author(s) (or their employer(s) unless otherwise stated in the text of the article) 2018. All rights reserved. No commercial use is permitted unless otherwise expressly granted.

  1. An optimized OPC and MDP flow for reducing mask write time and mask cost

    Science.gov (United States)

    Yang, Ellyn; Li, Cheng He; Park, Se Jin; Zhu, Yu; Guo, Eric

    2010-09-01

    In the process of optical proximity correction, layout edge or fragment is migrating to proper position in order to minimize edge placement error (EPE). During this fragment migration, several factors other than EPE can be also taken into account as a part of cost function for optimal fragment displacement. Several factors are devised in favor of OPC stability, which can accommodate room for high mask error enhancement factor (MEEF), lack of process window, catastrophic pattern failure such as pinch/bridge and improper fragmentation. As technology node becomes finer, there happens conflict between OPC accuracy and stability. Especially for metal layers, OPC has focused on the stability by loss of accurate OPC results. On this purpose, several techniques have been introduced, which are target smoothing, process window aware OPC, model-based retargeting and adaptive OPC. By utilizing those techniques, OPC enables more stabilized patterning, instead of realizing design target exactly on wafer. Inevitably, post-OPC layouts become more complicated because those techniques invoke additional edge, or fragments prior to correction or during OPC iteration. As a result, jogs of post OPC layer can be dramatically increased, which results in huge number of shot count after data fracturing. In other words, there is trade-off relationship between data complexity and various methods for OPC stability. In this paper, those relationships have been investigated with respect to several technology nodes. The mask shot count reduction is achieved by reducing the number of jogs with which EPE difference are within pre-specified value. The effect of jog smoothing on OPC output - in view of OPC performance and mask data preparation - was studied quantitatively for respective technology nodes.

  2. Flip chip assembly of thinned chips for hybrid pixel detector applications

    International Nuclear Information System (INIS)

    Fritzsch, T; Zoschke, K; Rothermund, M; Oppermann, H; Woehrmann, M; Ehrmann, O; Lang, K D; Huegging, F

    2014-01-01

    There is a steady trend to ultra-thin microelectronic devices. Especially for future particle detector systems a reduced readout chip thickness is required to limit the loss of tracking precision due to scattering. The reduction of silicon thickness is performed at wafer level in a two-step thinning process. To minimize the risk of wafer breakage the thinned wafer needs to be handled by a carrier during the whole process chain of wafer bumping. Another key process is the flip chip assembly of thinned readout chips onto thin sensor tiles. Besides the prevention of silicon breakage the minimization of chip warpage is one additional task for a high yield and reliable flip chip process. A new technology using glass carrier wafer will be described in detail. The main advantage of this technology is the combination of a carrier support during wafer processing and the chip support during flip chip assembly. For that a glass wafer is glue-bonded onto the backside of the thinned readout chip wafer. After the bump deposition process the glass-readout chip stack is diced in one step. Finally the glass carrier chip is released by laser illumination after flip chip assembly of the readout chip onto sensor tile. The results of the flip chip assembly process development for the ATLAS IBL upgrade are described more in detail. The new ATLAS FEI4B chip with a size of 20 × 19 mm 2 is flip chip bonded with a thickness of only 150 μm, but the capability of this technology has been demonstrated on hybrid modules with a reduced readout chip thickness of down to 50 μm which is a major step for ultra-thin electronic systems

  3. Photonic network-on-chip design

    CERN Document Server

    Bergman, Keren; Biberman, Aleksandr; Chan, Johnnie; Hendry, Gilbert

    2013-01-01

    This book provides a comprehensive synthesis of the theory and practice of photonic devices for networks-on-chip. It outlines the issues in designing photonic network-on-chip architectures for future many-core high performance chip multiprocessors. The discussion is built from the bottom up: starting with the design and implementation of key photonic devices and building blocks, reviewing networking and network-on-chip theory and existing research, and finishing with describing various architectures, their characteristics, and the impact they will have on a computing system. After acquainting

  4. Wax-bonding 3D microfluidic chips

    KAUST Repository

    Gong, Xiuqing; Yi, Xin; Xiao, Kang; Li, Shunbo; Kodzius, Rimantas; Qin, Jianhua; Wen, Weijia

    2013-01-01

    We report a simple, low-cost and detachable microfluidic chip incorporating easily accessible paper, glass slides or other polymer films as the chip materials along with adhesive wax as the recycling bonding material. We use a laser to cut through the paper or film to form patterns and then sandwich the paper and film between glass sheets or polymer membranes . The hot-melt adhesive wax can realize bridge bonding between various materials, for example, paper, polymethylmethacrylate (PMMA) film, glass sheets, or metal plate. The bonding process is reversible and the wax is reusable through a melting and cooling process. With this process, a three-dimensional (3D) microfluidic chip is achievable by vacuating and venting the chip in a hot-water bath. To study the biocompatibility and applicability of the wax-based microfluidic chip, we tested the PCR compatibility with the chip materials first. Then we applied the wax-paper based microfluidic chip to HeLa cell electroporation (EP ). Subsequently, a prototype of a 5-layer 3D chip was fabricated by multilayer wax bonding. To check the sealing ability and the durability of the chip, green fluorescence protein (GFP) recombinant Escherichia coli (E. coli) bacteria were cultured, with which the chemotaxis of E. coli was studied in order to determine the influence of antibiotic ciprofloxacin concentration on the E. coli migration.

  5. Wax-bonding 3D microfluidic chips

    KAUST Repository

    Gong, Xiuqing

    2013-10-10

    We report a simple, low-cost and detachable microfluidic chip incorporating easily accessible paper, glass slides or other polymer films as the chip materials along with adhesive wax as the recycling bonding material. We use a laser to cut through the paper or film to form patterns and then sandwich the paper and film between glass sheets or polymer membranes . The hot-melt adhesive wax can realize bridge bonding between various materials, for example, paper, polymethylmethacrylate (PMMA) film, glass sheets, or metal plate. The bonding process is reversible and the wax is reusable through a melting and cooling process. With this process, a three-dimensional (3D) microfluidic chip is achievable by vacuating and venting the chip in a hot-water bath. To study the biocompatibility and applicability of the wax-based microfluidic chip, we tested the PCR compatibility with the chip materials first. Then we applied the wax-paper based microfluidic chip to HeLa cell electroporation (EP ). Subsequently, a prototype of a 5-layer 3D chip was fabricated by multilayer wax bonding. To check the sealing ability and the durability of the chip, green fluorescence protein (GFP) recombinant Escherichia coli (E. coli) bacteria were cultured, with which the chemotaxis of E. coli was studied in order to determine the influence of antibiotic ciprofloxacin concentration on the E. coli migration.

  6. A scalable single-chip multi-processor architecture with on-chip RTOS kernel

    NARCIS (Netherlands)

    Theelen, B.D.; Verschueren, A.C.; Reyes Suarez, V.V.; Stevens, M.P.J.; Nunez, A.

    2003-01-01

    Now that system-on-chip technology is emerging, single-chip multi-processors are becoming feasible. A key problem of designing such systems is the complexity of their on-chip interconnects and memory architecture. It is furthermore unclear at what level software should be integrated. An example of a

  7. Chip-by-chip configurable interconnection using digital printing techniques

    International Nuclear Information System (INIS)

    Mashayekhi, Mohammad; Carrabina, Jordi; Winchester, Lee; Laurila, Mika-Matti; Mäntysalo, Matti; Ogier, Simon; Terés, Lluís

    2017-01-01

    Printed electronics technologies add new fabrication concepts to the classical set of microelectronic processes. Among these, the use of digital printing techniques such as inkjet permits the deposition of materials on top of preexisting substrates without any mask. This allows individual personalization of electronic circuits. Different proposals have been made to make use of such a property: (1) wiring new metallic layers on top of circuits to build programmable logic array-like circuits, (2) programming OTP ROM like memories, and (3) building inkjet-configurable gate arrays. The capability of building an individual circuit with technological steps simpler than photolithographic ones opens a concept similar to the successful field programmable gate array. Although nowadays the process resolution is still low, it can quickly evolve to higher wiring densities and therefore permit a greater level of transistor integration. In this paper, we propose a new structure to realize the connections only by deposition of conductive dots oriented to optimize the area needed to implement the drop-on-demand (DoD) wiring at circuit level. One important feature of this structure is that it minimizes the amount of printed material required for the connection thereby reducing failures often seen with DoD printing techniques for conductive lines. These structures have been validated by two different DoD technologies: inkjet and superfine jet, and have been compared to mask-based photolithography technology with promising results. (paper)

  8. MEDEA+ project 2T302 MUSCLE: masks through user's supply chain: leadership by excellence

    Science.gov (United States)

    Torsy, Andreas

    2008-04-01

    The rapid evolution of our information society depends on the continuous developments and innovations of semiconductor products. The cost per chip functionality keeps reducing by a factor of 2 every 18 month. However, this performance and success of the semiconductor industry critically depends on the quality of the lithographic photomasks. The need for the high quality of photomask drives lithography costs sensitively, which is a key factor in the manufacture of microelectronics devices. Therefore, the aim is to reduce production costs while overcoming challenges in terms of feature sizes, complexity and cycle times. Consequently, lithography processes must provide highest possible quality at reasonable prices. This way, the leadership in the lithographic area can be maintained and European chipmakers can stay competitive with manufacturers in the Far East and the USA. Under the umbrella of MEDEA+, a project called MUSCLE (>) has been started among leading semiconductor companies in Europe: ALTIS Semiconductor (Project Leader), ALCATEL Vacuum, ATMEL, CEA/LETI, Entegris, NXP Semiconductors, TOPPAN Photomasks, AMTC, Carl ZEISS SMS, DMS, Infineon Technologies, VISTEC Semiconductor, NIKON Precision, SCHOTT Lithotec, ASML, PHOTRONICS, IMEC, DCE, DNP Photomask, STMicroelectronics, XYALIS and iCADA. MUSCLE focuses particularly on mask data flow, photomask carrier, photomask defect characterization and photomask data handling. In this paper, we will discuss potential solutions like standardization and automation of the photomask data flow based on SEMI P10, the performance and the impact of the supply chain parameter within the photomask process, the standardization of photomask defect characterization and a discussion of the impact of new Reticle Enhancement Technologies (RET) such as mask process correction and finally a generic model to describe the photomasks key performance indicators for prototype photomasks.

  9. Mitigation and control of the overcuring effect in mask projection micro-stereolithography

    Science.gov (United States)

    O'Neill, Paul F.; Kent, Nigel; Brabazon, Dermot

    2017-10-01

    Mask Projection micro-Stereolithography (MPμSL) is an additive manufacturing technique capable of producing solid parts with micron-scale resolution from a vat of photocurable liquid polymer resin. Although the physical mechanism remains the same, the process differs from traditional laser-galvanometer based stereolithography (SL) in its use of a dynamic mask UV projector, or digital light processor (DLP), which cures each location within each 3D layer at the same time. One area where MPµSL has garnered considerable attention is in the field of microfluidics and Lab-on-a-Chip, where complex multistep microfabrication techniques adopted from the semiconductor industry are still widely used, and where MPµSL offers the ability to fabricate completely encapsulated fluidic channels in a single step and at low cost [1-3]. However, a significant obstacle exists in the prevention of channel blockage due to overcuring of the polymer resin [4, 5]. Overcuring can be attributed to the so-called `back side effect' [2] which occurs during the build process as light from successive layers penetrates into the resin to a depth greater than the layer thickness. This effect is most prevalent in channels or features oriented horizontally (in a parallel plane to that of the build platform). Currently there are two main approaches in controlling the cure depth; 1. the chemical approach, which involves doping the resin material with a chemical light absorber [6-8]; and 2. by improving the system's hardware and optical elements to improve the homogeneity of the light dosage and control the cure depth [9]. Here we investigate a third approach through modification of the 3D CAD file prior to printing to mitigate for UV light leakage from successive build layers. Although used here in conjunction with the MPμSL technique, this approach can be applied to a range of SL techniques to improve printer resolution and enable production of internal features with higher dimensional accuracy.

  10. X-ray face mask and bib device

    International Nuclear Information System (INIS)

    Forshee, D.J.

    1982-01-01

    An x-ray protective face mask is made of a relatively transparent lead containing radiation shielding plastics material, and is removably attachable to a chest or bib shield for application of the device to and support upon the shoulders of a technician or a patient. Alternatively, the face mask is formed of a lens portion supported in a plastics frame, upon the lower portion of which is removably attached a bib shield that in turn is removably attachable to an apron. The frame of the face mask, bib shield and apron are preferably lined with lead sheets to protect the neck, face, chest and body of the technician from the random secondary or scatter x-ray beams. The face mask and bib shield can be formed of a moulded plastics material as a unitary device, the lens portion being attached to the frame therefor. (author)

  11. Error response test system and method using test mask variable

    Science.gov (United States)

    Gender, Thomas K. (Inventor)

    2006-01-01

    An error response test system and method with increased functionality and improved performance is provided. The error response test system provides the ability to inject errors into the application under test to test the error response of the application under test in an automated and efficient manner. The error response system injects errors into the application through a test mask variable. The test mask variable is added to the application under test. During normal operation, the test mask variable is set to allow the application under test to operate normally. During testing, the error response test system can change the test mask variable to introduce an error into the application under test. The error response system can then monitor the application under test to determine whether the application has the correct response to the error.

  12. Backward masking, the suffix effect, and preperceptual storage.

    Science.gov (United States)

    Kallman, H J; Massaro, D W

    1983-04-01

    This article considers the use of auditory backward recognition masking (ABRM) and stimulus suffix experiments as indexes of preperceptual auditory storage. In the first part of the article, two ABRM experiments that failed to demonstrate a mask disinhibition effect found previously in stimulus suffix experiments are reported. The failure to demonstrate mask disinhibition is inconsistent with an explanation of ABRM in terms of lateral inhibition. In the second part of the article, evidence is presented to support the conclusion that the suffix effect involves the contributions of later processing stages and does not provide an uncontaminated index of preperceptual storage. In contrast, it is claimed that ABRM experiments provide the most direct index of the temporal course of perceptual recognition. Partial-report tasks and other paradigms are also evaluated in terms of their contributions to an understanding of preperceptual auditory storage. Differences between interruption and integration masking are discussed along with the role of preperceptual auditory storage in speech perception.

  13. Kuldne Mask Tallinnasssssss! / Sergei Zhenovatsh ; interv. Hellar Bergmann

    Index Scriptorium Estoniae

    Zhenovatsh, Sergei

    2008-01-01

    Lavastaja Sergei Zhenovatsh oma Teatrikunsti Stuudiost, noortest näitlejatest, Eestist. Lavastaja on Eestis teatrifestivali "Kuldne mask Eestis" raames. 10.-11. okt. etendus Tallinnas, Salme Kultuurikeskuses Nikolai Gogoli näidend "Mängurid"

  14. Thermal stress analysis of the SLAC moveable mask. Addendum 2

    International Nuclear Information System (INIS)

    Johnson, G.L.

    1985-01-01

    X-ray beams emerging from the new SLAC electron-positron storage ring (PEP) can impinge on the walls of tangential divertor channels. A moveable mask made of 6061-T6 aluminum is installed in the channel to limit wall heating. The mask is cooled with water flowing axially at 30 0 C. Beam strikes on the mask cause highly localized heating in the channel structure. Analyses were completed to determine the temperatures and thermally-induced stresses due to this heating. The current design and operating conditions should result in the entrance to the moveable mask operating at a peak temperature of 88 0 C with a peak thermal stress at 19% of the yield of 6061-T6 aluminum

  15. Investigation and modeling of CPL mask profiles using OCD

    Science.gov (United States)

    Chen, Hsuan-Chen; Lin, Ren-Hao; Chen, Chien-Cheng; Huang, Cheng-Hsuan; Lien, Ta-Cheng; Chen, Chia-Jen; Lee, Gaston; Lee, Hsin-Chang; Yen, Anthony

    2016-05-01

    Mask profile of chromeless phase-shifting lithography (CPL) defined by OCD has been investigated. In CPL masks, unbalanced bombardments caused by different ion accelerations lead to the formation of micro-notch structures. A better understanding of micro-notch structures is essential for quality gating of mask processes to improve of CPL mask profiles. By measuring 12 of 16 elements of Mueller matrix, we are able to set up a model to simulate the depth of micro-notch structure profile which shows good correlation with TEM images. Moreover, values of CD, quartz etching depth and side wall angle acquired by OCD are presented and compared with those obtained by SEM, TEM and AFM, respectively.

  16. Noise frame duration, masking potency and whiteness of temporal noise

    OpenAIRE

    Kukkonen, Helja; Rovamo, Jyrki; Donner, Kristian; Tammikallio, Marja; Raninen, Antii

    2002-01-01

    PURPOSE. Because of the limited contrast range, increasing the duration of the noise frame is often the only option for increasing the masking potency of external, white temporal noise. This, however, reduces the high-frequency cutoff beyond which noise is no longer white. This study was conducted to determine the longest noise frame duration that produces the strongest masking effect and still mimics white noise on the detection of sinusoidal flicker. \\ud \\ud METHODS. Contrast energy thresho...

  17. Masking responses to light in period mutant mice.

    Science.gov (United States)

    Pendergast, Julie S; Yamazaki, Shin

    2011-10-01

    Masking is an acute effect of an external signal on an overt rhythm and is distinct from the process of entrainment. In the current study, we investigated the phase dependence and molecular mechanisms regulating masking effects of light pulses on spontaneous locomotor activity in mice. The circadian genes, Period1 (Per1) and Per2, are necessary components of the timekeeping machinery and entrainment by light appears to involve the induction of the expression of Per1 and Per2 mRNAs in the suprachiasmatic nuclei (SCN). We assessed the roles of the Per genes in regulating masking by assessing the effects of light pulses on nocturnal locomotor activity in C57BL/6J Per mutant mice. We found that Per1(-/-) and Per2(-/-) mice had robust negative masking responses to light. In addition, the locomotor activity of Per1(-/-)/Per2(-/-) mice appeared to be rhythmic in the light-dark (LD) cycle, and the phase of activity onset was advanced (but varied among individual mice) relative to lights off. This rhythm persisted for 1 to 2 days in constant darkness in some Per1(-/-)/Per2(-/-) mice. Furthermore, Per1(-/-)/Per2(-/-) mice exhibited robust negative masking responses to light. Negative masking was phase dependent in wild-type mice such that maximal suppression was induced by light pulses at zeitgeber time 14 (ZT14) and gradually weaker suppression occurred during light pulses at ZT16 and ZT18. By measuring the phase shifts induced by the masking protocol (light pulses were administered to mice maintained in the LD cycle), we found that the phase responsiveness of Per mutant mice was altered compared to wild-types. Together, our data suggest that negative masking responses to light are robust in Per mutant mice and that the Per1(-/-)/Per2(-/-) SCN may be a light-driven, weak/damping oscillator.

  18. Bubble masks for time-encoded imaging of fast neutrons.

    Energy Technology Data Exchange (ETDEWEB)

    Brubaker, Erik; Brennan, James S.; Marleau, Peter; Nowack, Aaron B.; Steele, John T.; Sweany, Melinda; Throckmorton, Daniel J.

    2013-09-01

    Time-encoded imaging is an approach to directional radiation detection that is being developed at SNL with a focus on fast neutron directional detection. In this technique, a time modulation of a detected neutron signal is inducedtypically, a moving mask that attenuates neutrons with a time structure that depends on the source position. An important challenge in time-encoded imaging is to develop high-resolution two-dimensional imaging capabilities; building a mechanically moving high-resolution mask presents challenges both theoretical and technical. We have investigated an alternative to mechanical masks that replaces the solid mask with a liquid such as mineral oil. Instead of fixed blocks of solid material that move in pre-defined patterns, the oil is contained in tubing structures, and carefully introduced air gapsbubblespropagate through the tubing, generating moving patterns of oil mask elements and air apertures. Compared to current moving-mask techniques, the bubble mask is simple, since mechanical motion is replaced by gravity-driven bubble propagation; it is flexible, since arbitrary bubble patterns can be generated by a software-controlled valve actuator; and it is potentially high performance, since the tubing and bubble size can be tuned for high-resolution imaging requirements. We have built and tested various single-tube mask elements, and will present results on bubble introduction and propagation as a function of tubing size and cross-sectional shape; real-time bubble position tracking; neutron source imaging tests; and reconstruction techniques demonstrated on simple test data as well as a simulated full detector system.

  19. Evaluation of the Joint Service General Purpose Mask, XM50

    Science.gov (United States)

    2005-07-01

    and vision Trial 7 Trial 8 Trial 12 correction E-2 TRIAL 3299 7795 2079 Did not finish exercises. No No comment on sweat or No comment on sweat or...lhr 50 min playing time). Duringboth activities, slight Reported slight intermittent No comment on. swet or fogging with slight impact on fogging...right eye. During steam No comment on Mask was stationary. engine exercise, reported 4 sweat or fogging Reported that seal mask seal leakage at

  20. Differential effect of visual masking in perceptual categorization.

    Science.gov (United States)

    Hélie, Sébastien; Cousineau, Denis

    2015-06-01

    This article explores the visual information used to categorize stimuli drawn from a common stimulus space into verbal and nonverbal categories using 2 experiments. Experiment 1 explores the effect of target duration on verbal and nonverbal categorization using backward masking to interrupt visual processing. With categories equated for difficulty for long and short target durations, intermediate target duration shows an advantage for verbal categorization over nonverbal categorization. Experiment 2 tests whether the results of Experiment 1 can be explained by shorter target duration resulting in a smaller signal-to-noise ratio of the categorization stimulus. To test for this possibility, Experiment 2 used integration masking with the same stimuli, categories, and masks as Experiment 1 with a varying level of mask opacity. As predicted, low mask opacity yielded similar results to long target duration while high mask opacity yielded similar results to short target duration. Importantly, intermediate mask opacity produced an advantage for verbal categorization over nonverbal categorization, similar to intermediate target duration. These results suggest that verbal and nonverbal categorization are affected differently by manipulations affecting the signal-to-noise ratio of the stimulus, consistent with multiple-system theories of categorizations. The results further suggest that verbal categorization may be more digital (and more robust to low signal-to-noise ratio) while the information used in nonverbal categorization may be more analog (and less robust to lower signal-to-noise ratio). This article concludes with a discussion of how these new results affect the use of masking in perceptual categorization and multiple-system theories of perceptual category learning. (c) 2015 APA, all rights reserved).

  1. Adapting Mask-RCNN for Automatic Nucleus Segmentation

    OpenAIRE

    Johnson, Jeremiah W.

    2018-01-01

    Automatic segmentation of microscopy images is an important task in medical image processing and analysis. Nucleus detection is an important example of this task. Mask-RCNN is a recently proposed state-of-the-art algorithm for object detection, object localization, and object instance segmentation of natural images. In this paper we demonstrate that Mask-RCNN can be used to perform highly effective and efficient automatic segmentations of a wide range of microscopy images of cell nuclei, for ...

  2. A phase mask fiber grating and sensing applications

    Directory of Open Access Journals (Sweden)

    Preecha P. Yupapin

    2003-09-01

    Full Text Available This paper presents an investigation of a fabricated fiber grating device characteristics and its applications, using a phase mask writing technique. The use of a most common UV phase laser (KrF eximer laser, with high intensity light source was focussed to the phase mask for writing on a fiber optic sample. The device (i.e. grating characteristic especially, in sensing application, was investigated. The possibility of using such device for temperature and strain sensors is discussed.

  3. Protection provided by masks sinkers in interventional techniques

    International Nuclear Information System (INIS)

    Pera Cegarra, O.; Alejo Luque, L.; Pifarre Martinez, J.

    2011-01-01

    The high doses that are taught in laboratories worked indispensable the use of shields and armor. In this context, the use of sinkers glasses is widespread, but not the sinkers of the masks. Qur goal is to study the effectiveness of such masks for later comparison with that provided by leaded glasses with side shields. Specifically, compare the reduction in lens dose rate for different positions and orientations of the head of specialist intervention.

  4. Masked hypertension: evaluation, prognosis, and treatment.

    Science.gov (United States)

    Angeli, Fabio; Reboldi, Gianpaolo; Verdecchia, Paolo

    2010-09-01

    Blood pressure (BP) may be high during usual daily life in one out of 7-8 individuals with normal BP in the clinic or doctor's office. This condition is usually defined as masked hypertension (MH). Prevalence of MH varied across different studies depending on patient characteristics, populations studied, and different definitions of MH. Self-measured BP and ambulatory BP (ABP) have been widely used to identify subjects with MH. Various factors have been identified as possible determinants of MH. Cigarette smoking, alcohol, physical activity, job, and psychological stress may increase BP out of the clinical environment in otherwise normotensive individuals, leading to MH. In most studies, target organ damage was comparable in subjects with MH and those with sustained hypertension, and greater than in those with true normotension. Subjects with MH showed a 1.5- to 3-fold higher risk of major cardiovascular (CV) disease than those with normotension, and their risk was not different from that of patients with sustained hypertension. In an overview of literature, we found that the risk of major CV disease was higher in subjects with MH than in the normotensive subjects regardless of the definition of MH based on self-measured BP (hazard ratio (HR) 2.13; 95% confidence interval (CI): 1.35-3.35; P = 0.001) or 24-h ABP (HR 2.00; 95% CI: 1.54-2.60; P who appear to be more likely to have this condition. Antihypertensive treatment is envisaged in these subjects, although the associated outcome benefits are still undetermined.

  5. Comparison of the OxyMask and Venturi Mask in the Delivery of Supplemental Oxygen: Pilot Study in Oxygen-Dependent Patients

    OpenAIRE

    Beecroft, Jaime M; Hanly, Patrick J

    2006-01-01

    BACKGROUND: The OxyMask (Southmedic Inc, Canada) is a new face mask for oxygen delivery that uses a small ‘diffuser’ to concentrate and direct oxygen toward the mouth and nose. The authors hypothesized that this unique design would enable the OxyMask to deliver oxygen more efficiently than a Venturi mask (Hudson RCI, USA) in patients with chronic hypoxemia.METHODS: Oxygen-dependent patients with chronic, stable respiratory disease were recruited to compare the OxyMask and Venturi mask in a ra...

  6. A pattern-based method to automate mask inspection files

    Science.gov (United States)

    Kamal Baharin, Ezni Aznida Binti; Muhsain, Mohamad Fahmi Bin; Ahmad Ibrahim, Muhamad Asraf Bin; Ahmad Noorhani, Ahmad Nurul Ihsan Bin; Sweis, Jason; Lai, Ya-Chieh; Hurat, Philippe

    2017-03-01

    Mask inspection is a critical step in the mask manufacturing process in order to ensure all dimensions printed are within the needed tolerances. This becomes even more challenging as the device nodes shrink and the complexity of the tapeout increases. Thus, the amount of measurement points and their critical dimension (CD) types are increasing to ensure the quality of the mask. In addition to the mask quality, there is a significant amount of manpower needed when the preparation and debugging of this process are not automated. By utilizing a novel pattern search technology with the ability to measure and report match region scan-line (edge) measurements, we can create a flow to find, measure and mark all metrology locations of interest and provide this automated report to the mask shop for inspection. A digital library is created based on the technology product and node which contains the test patterns to be measured. This paper will discuss how these digital libraries will be generated and then utilized. As a time-critical part of the manufacturing process, this can also reduce the data preparation cycle time, minimize the amount of manual/human error in naming and measuring the various locations, reduce the risk of wrong/missing CD locations, and reduce the amount of manpower needed overall. We will also review an example pattern and how the reporting structure to the mask shop can be processed. This entire process can now be fully automated.

  7. Mask design and fabrication in coded aperture imaging

    International Nuclear Information System (INIS)

    Shutler, Paul M.E.; Springham, Stuart V.; Talebitaher, Alireza

    2013-01-01

    We introduce the new concept of a row-spaced mask, where a number of blank rows are interposed between every pair of adjacent rows of holes of a conventional cyclic difference set based coded mask. At the cost of a small loss in signal-to-noise ratio, this can substantially reduce the number of holes required to image extended sources, at the same time increasing mask strength uniformly across the aperture, as well as making the mask automatically self-supporting. We also show that the Finger and Prince construction can be used to wrap any cyclic difference set onto a two-dimensional mask, regardless of the number of its pixels. We use this construction to validate by means of numerical simulations not only the performance of row-spaced masks, but also the pixel padding technique introduced by in ’t Zand. Finally, we provide a computer program CDSGEN.EXE which, on a fast modern computer and for any Singer set of practical size and open fraction, generates the corresponding pattern of holes in seconds

  8. Face mask ventilation--the dos and don'ts.

    Science.gov (United States)

    Wood, Fiona E; Morley, Colin J

    2013-12-01

    Face mask ventilation provides respiratory support to newly born or sick infants. It is a challenging technique and difficult to ensure that an appropriate tidal volume is delivered because large and variable leaks occur between the mask and face; airway obstruction may also occur. Technique is more important than the mask shape although the size must appropriately fit the face. The essence of the technique is to roll the mask on to the face from the chin while avoiding the eyes, with a finger and thumb apply a strong even downward pressure to the top of the mask, away from the stem and sloped sides or skirt of the mask, place the other fingers under the jaw and apply a similar upward pressure. Preterm infants require continuous end-expiratory pressure to facilitate lung aeration and maintain lung volume. This is best done with a T-piece device, not a self-inflating or flow-inflating bag. Copyright © 2013 Elsevier Ltd. All rights reserved.

  9. GLEBUS SAINCIUC’S PAPIER-MÂCHÉ PORTRAIT MASKS

    Directory of Open Access Journals (Sweden)

    MARIAN ANA

    2016-12-01

    Full Text Available The portrait masks created by Glebus Sainciuc (1919-2012 portray painters, sculptors, musicians, writers, actors, playwrights,filmmakers etc., and they are a proof of the fact that the individual contribution of these persons to the artistic development of our country has not been forgotten. Morphologically, the papier-mâché portrait masks of master Glebus Sainciuc are situated at the limit of painting, graphic drawing and sculpture; the masks were created by the master using the papier-mâché techniques. We should mention that the author’s predilection for the fauvist and naïve techniques in portrait representation, together with the style of his caricatures and small size drawings, infl uenced the caricatures style of his masks. The first portrait masks were created by Glebus Sainciuc in 1957, and by the end of his artistic activity his collection consisted of 350 masks – all depicting different persons, but all sharing the same portrait techniques and showing the inner charm of these persons.

  10. Status of EUVL mask development in Europe (Invited Paper)

    Science.gov (United States)

    Peters, Jan H.

    2005-06-01

    EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

  11. Source Separation via Spectral Masking for Speech Recognition Systems

    Directory of Open Access Journals (Sweden)

    Gustavo Fernandes Rodrigues

    2012-12-01

    Full Text Available In this paper we present an insight into the use of spectral masking techniques in time-frequency domain, as a preprocessing step for the speech signal recognition. Speech recognition systems have their performance negatively affected in noisy environments or in the presence of other speech signals. The limits of these masking techniques for different levels of the signal-to-noise ratio are discussed. We show the robustness of the spectral masking techniques against four types of noise: white, pink, brown and human speech noise (bubble noise. The main contribution of this work is to analyze the performance limits of recognition systems  using spectral masking. We obtain an increase of 18% on the speech hit rate, when the speech signals were corrupted by other speech signals or bubble noise, with different signal-to-noise ratio of approximately 1, 10 and 20 dB. On the other hand, applying the ideal binary masks to mixtures corrupted by white, pink and brown noise, results an average growth of 9% on the speech hit rate, with the same different signal-to-noise ratio. The experimental results suggest that the masking spectral techniques are more suitable for the case when it is applied a bubble noise, which is produced by human speech, than for the case of applying white, pink and brown noise.

  12. Self-powered integrated systems-on-chip (energy chip)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-04-23

    In today\\'s world, consumer driven technology wants more portable electronic gadgets to be developed, and the next big thing in line is self-powered handheld devices. Therefore to reduce the power consumption as well as to supply sufficient power to run those devices, several critical technical challenges need to be overcome: a. Nanofabrication of macro/micro systems which incorporates the direct benefit of light weight (thus portability), low power consumption, faster response, higher sensitivity and batch production (low cost). b. Integration of advanced nano-materials to meet the performance/cost benefit trend. Nano-materials may offer new functionalities that were previously underutilized in the macro/micro dimension. c. Energy efficiency to reduce power consumption and to supply enough power to meet that low power demand. We present a pragmatic perspective on a self-powered integrated System on Chip (SoC). We envision the integrated device will have two objectives: low power consumption/dissipation and on-chip power generation for implementation into handheld or remote technologies for defense, space, harsh environments and medical applications. This paper provides insight on materials choices, intelligent circuit design, and CMOS compatible integration.

  13. Self-powered integrated systems-on-chip (energy chip)

    Science.gov (United States)

    Hussain, M. M.; Fahad, H.; Rojas, J.; Hasan, M.; Talukdar, A.; Oommen, J.; Mink, J.

    2010-04-01

    In today's world, consumer driven technology wants more portable electronic gadgets to be developed, and the next big thing in line is self-powered handheld devices. Therefore to reduce the power consumption as well as to supply sufficient power to run those devices, several critical technical challenges need to be overcome: a. Nanofabrication of macro/micro systems which incorporates the direct benefit of light weight (thus portability), low power consumption, faster response, higher sensitivity and batch production (low cost). b. Integration of advanced nano-materials to meet the performance/cost benefit trend. Nano-materials may offer new functionalities that were previously underutilized in the macro/micro dimension. c. Energy efficiency to reduce power consumption and to supply enough power to meet that low power demand. We present a pragmatic perspective on a self-powered integrated System on Chip (SoC). We envision the integrated device will have two objectives: low power consumption/dissipation and on-chip power generation for implementation into handheld or remote technologies for defense, space, harsh environments and medical applications. This paper provides insight on materials choices, intelligent circuit design, and CMOS compatible integration.

  14. 42 CFR 84.118 - Half-mask facepieces, full facepieces, and mouthpieces; fit; minimum requirements.

    Science.gov (United States)

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Half-mask facepieces, full facepieces, and... OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.118 Half-mask facepieces, full facepieces, and mouthpieces; fit; minimum requirements. (a) Half-mask facepieces and full facepieces shall be designed and...

  15. A procedure and program to calculate shuttle mask advantage

    Science.gov (United States)

    Balasinski, A.; Cetin, J.; Kahng, A.; Xu, X.

    2006-10-01

    A well-known recipe for reducing mask cost component in product development is to place non-redundant elements of layout databases related to multiple products on one reticle plate [1,2]. Such reticles are known as multi-product, multi-layer, or, in general, multi-IP masks. The composition of the mask set should minimize not only the layout placement cost, but also the cost of the manufacturing process, design flow setup, and product design and introduction to market. An important factor is the quality check which should be expeditious and enable thorough visual verification to avoid costly modifications once the data is transferred to the mask shop. In this work, in order to enable the layer placement and quality check procedure, we proposed an algorithm where mask layers are first lined up according to the price and field tone [3]. Then, depending on the product die size, expected fab throughput, and scribeline requirements, the subsequent product layers are placed on the masks with different grades. The actual reduction of this concept to practice allowed us to understand the tradeoffs between the automation of layer placement and setup related constraints. For example, the limited options of the numbers of layer per plate dictated by the die size and other design feedback, made us consider layer pairing based not only on the final price of the mask set, but also on the cost of mask design and fab-friendliness. We showed that it may be advantageous to introduce manual layer pairing to ensure that, e.g., all interconnect layers would be placed on the same plate, allowing for easy and simultaneous design fixes. Another enhancement was to allow some flexibility in mixing and matching of the layers such that non-critical ones requiring low mask grade would be placed in a less restrictive way, to reduce the count of orphan layers. In summary, we created a program to automatically propose and visualize shuttle mask architecture for design verification, with

  16. Neopuff T-piece resuscitator mask ventilation: Does mask leak vary with different peak inspiratory pressures in a manikin model?

    Science.gov (United States)

    Maheshwari, Rajesh; Tracy, Mark; Hinder, Murray; Wright, Audrey

    2017-08-01

    The aim of this study was to compare mask leak with three different peak inspiratory pressure (PIP) settings during T-piece resuscitator (TPR; Neopuff) mask ventilation on a neonatal manikin model. Participants were neonatal unit staff members. They were instructed to provide mask ventilation with a TPR with three PIP settings (20, 30, 40 cm H 2 O) chosen in a random order. Each episode was for 2 min with 2-min rest period. Flow rate and positive end-expiratory pressure (PEEP) were kept constant. Airway pressure, inspiratory and expiratory tidal volumes, mask leak, respiratory rate and inspiratory time were recorded. Repeated measures analysis of variance was used for statistical analysis. A total of 12 749 inflations delivered by 40 participants were analysed. There were no statistically significant differences (P > 0.05) in the mask leak with the three PIP settings. No statistically significant differences were seen in respiratory rate and inspiratory time with the three PIP settings. There was a significant rise in PEEP as the PIP increased. Failure to achieve the desired PIP was observed especially at the higher settings. In a neonatal manikin model, the mask leak does not vary as a function of the PIP when the flow rate is constant. With a fixed rate and inspiratory time, there seems to be a rise in PEEP with increasing PIP. © 2017 Paediatrics and Child Health Division (The Royal Australasian College of Physicians).

  17. The use of forest chips in Finland

    International Nuclear Information System (INIS)

    Hakkila, P.

    2001-01-01

    International commitments require the industrial world to restrict their greenhouse gas emissions. In Finland, where the annual timber cut per capita is more than ten times the average cut in the other EU countries, the primary means to reduce CO 2 emissions is to replace fossil fuels with forest biomass. The annual consumption of wood-based energy corresponds to 6 million tonnes of oil equivalent (toe) or almost 20% of the total primary energy consumption. The goal is to rise the annual production of wood-based energy to 7.8 million toe by 2010. Substantial part of the targeted increase could be obtained by forest chips produced of unmerchantable small-diameter trees and logging residues. The goal for 2010 is to use 5 million solid m 3 of forest chips, which equals to 0.9 million toe. The use of forest chips is increasing. About 474 000 solid m 3 of forest chips were used as fuel in 1999. At the moment, the growth is rapid especially in cogeneration plants producing both heat and electricity. The growth is based primarily on chips obtained from logging residues. The price of forest chips decreased considerably during the 1990s but the price range remained wide. Chips made of logging residues are cheaper than those made of small trees. The average price of forest chips at the plant, VAT excluded, is about 53 FIM per MWh. In Sweden, the average price is more than 40% higher

  18. Least cost supply strategies for wood chips

    DEFF Research Database (Denmark)

    Möller, Bernd

    The abstract presents a study based on a geographical information system, which produce  cost-supply curves by location for forest woods chips in Denmark.......The abstract presents a study based on a geographical information system, which produce  cost-supply curves by location for forest woods chips in Denmark....

  19. Teaching Quality Control with Chocolate Chip Cookies

    Science.gov (United States)

    Baker, Ardith

    2014-01-01

    Chocolate chip cookies are used to illustrate the importance and effectiveness of control charts in Statistical Process Control. By counting the number of chocolate chips, creating the spreadsheet, calculating the control limits and graphing the control charts, the student becomes actively engaged in the learning process. In addition, examining…

  20. A Chip for an Implantable Neural Stimulator

    DEFF Research Database (Denmark)

    Gudnason, Gunnar; Bruun, Erik; Haugland, Morten

    2000-01-01

    This paper describes a chip for a multichannel neural stimulator for functional electrical stimulation (FES). The purpose of FES is to restore muscular control in disabled patients. The chip performs all the signal processing required in an implanted neural stimulator. The power and digital data...

  1. Performance evaluation of chip seals in Idaho.

    Science.gov (United States)

    2010-08-01

    The intent of this research project is to identify a wide variety of parameters that influence the performance of pavements treated via chip seals within the State of Idaho. Chip sealing is currently one of the most popular methods of maintenance for...

  2. Simple photolithographic rapid prototyping of microfluidic chips

    DEFF Research Database (Denmark)

    Kunstmann-Olsen, Casper; Hoyland, James; Rubahn, Horst-Günter

    2012-01-01

    Vi præsenterer en simpel metode til at producere støbeforme til støbning af PDMS mikrofluide chips vha. fotolitografi, med 35mm fotonegativer som masker. Vi demonstrer metodens muligheder og begrænsninger. Vi har optimeret processen til at fremstille planare lab-on-a-chip strukturer med meget høj...

  3. Microneedle Array Interface to CE on Chip

    NARCIS (Netherlands)

    Lüttge, Regina; Gardeniers, Johannes G.E.; Vrouwe, E.X.; van den Berg, Albert; Northrup, M.A.; Jensen, K.F; Harrison, D.J.

    2003-01-01

    This paper presents a microneedle array sampler interfaced to a capillary electrophoresis (CE) glass chip with integrated conductivity detection electrodes. A solution of alkali ions was electrokinetically loaded through the microneedles onto the chip and separation was demonstrated compared to a

  4. Multimedia-Based Chip Design Education.

    Science.gov (United States)

    Catalkaya, Tamer; Golze, Ulrich

    This paper focuses on multimedia computer-based training programs on chip design. Their development must be fast and economical, in order to be affordable by technical university institutions. The self-produced teaching program Illusion, which demonstrates a monitor controller as an example of a small but complete chip design, was implemented to…

  5. Masking with faces in central visual field under a variety of temporal schedules.

    Science.gov (United States)

    Daar, Marwan; Wilson, Hugh R

    2015-11-01

    With a few exceptions, previous studies have explored masking using either a backward mask or a common onset trailing mask, but not both. In a series of experiments, we demonstrate the use of faces in central visual field as a viable method to study the relationship between these two types of mask schedule. We tested observers in a two alternative forced choice face identification task, where both target and mask comprised synthetic faces, and show that a simple model can successfully predict masking across a variety of masking schedules ranging from a backward mask to a common onset trailing mask and a number of intermediate variations. Our data are well accounted for by a window of sensitivity to mask interference that is centered at around 100 ms. Copyright © 2015 Elsevier Ltd. All rights reserved.

  6. METAL CHIP HEATING PROCESS INVESTIGATION (Part I

    Directory of Open Access Journals (Sweden)

    O. M. Dyakonov

    2007-01-01

    Full Text Available The main calculation methods for heat- and mass transfer in porous heterogeneous medium have been considered. The paper gives an evaluation of the possibility to apply them for calculation of metal chip heating process. It has been shown that a description of transfer processes in a chip has its own specific character that is attributed to difference between thermal and physical properties of chip material and lubricant-coolant components on chip surfaces. It has been determined that the known expressions for effective heat transfer coefficients can be used as basic ones while approaching mutually penetrating continuums. A mathematical description of heat- and mass transfer in chip medium can be considered as a basis of mathematical modeling, numerical solution and parameter optimization of the mentioned processes.

  7. Correction: Inferior alveolar nerve injury with laryngeal mask airway: a case report.

    LENUS (Irish Health Repository)

    Hanumanthaiah, Deepak

    2011-11-30

    ABSTRACT: Following the publication of our article [Inferior alveolar nerve injury with laryngeal mask airway: a case report. Journal of Medical Case Reports 2011, 5:122] it was brought to our attention that we inadvertently used the registered trademark of the Laryngeal Mask Company Limited (LMA) as the abbreviation for laryngeal mask airway. A Portex(R) Soft Seal(R) Laryngeal Mask was used and not a device manufactured by the Laryngeal Mask Company.

  8. Quality of patient positioning during cerebral tomotherapy irradiation using different mask systems

    Energy Technology Data Exchange (ETDEWEB)

    Leitzen, C.; Wilhelm-Buchstab, T.; Garbe, S.; Luetter, C.; Muedder, T.; Simon, B.; Schild, H.H.; Schueller, H. [Universitaetsklinik Bonn, Radiologische Klinik, FE Strahlentherapie, Bonn (Germany)

    2014-04-15

    Patient immobilization during brain tumor radiotherapy is achieved by employing different mask systems. Two innovative mask systems were developed to minimize the problems of claustrophobic patients. Our aim was to evaluate whether the quality of patient immobilization using the new mask systems was equivalent to the standard mask system currently in use. Thirty-three patients with cerebral target volumes were irradiated using the Hi-Art II tomotherapy system between 2010 and 2012. Each group of 11 patients was fitted with one of the two new mask systems (Crystal {sup registered} or Open Face {sup registered} mask, Orfit) or the standard three-point mask (Raycast {sup registered} -HP, Orfit) and a total of 557 radiotherapy fractions were evaluated. After positioning was checked by MV-CT, the necessary table adjustments were noted. Data were analyzed by comparing the groups, and safety margins were calculated for nonimage-guided irradiation. The mean values of the table adjustments were: (a) lateral (mm): -0.22 (mask 1, standard deviation (σ): 2.15); 1.1 (mask 2, σ: 2.4); -0.64 (mask 3, σ: 2.9); (b) longitudinal (mm): -1 (mask 1, σ: 2.57); -0.5 (mask 2, σ: 4.7); -1.22 (mask 3, σ: 2.52); (c) vertical (mm): 0.62 (mask 1, σ: 0.63); 1.2 (mask 2, σ: 1.0); 0.57 (mask 3, σ: 0.28); (d) roll: 0.35 (mask 1, σ: 0.75); 0 (mask 2, σ: 0.8); 0.02 (mask 3, σ: 1.12). The outcomes suggest necessary safety margins of 5.49-7.38 mm (lateral), 5.4-6.56 mm (longitudinal), 0.82-3.9 mm (vertical), and 1.93-4.5 (roll). There were no significant differences between the groups. The new mask systems improve patient comfort while providing consistent patient positioning. (orig.)

  9. Quality of patient positioning during cerebral tomotherapy irradiation using different mask systems

    International Nuclear Information System (INIS)

    Leitzen, C.; Wilhelm-Buchstab, T.; Garbe, S.; Luetter, C.; Muedder, T.; Simon, B.; Schild, H.H.; Schueller, H.

    2014-01-01

    Patient immobilization during brain tumor radiotherapy is achieved by employing different mask systems. Two innovative mask systems were developed to minimize the problems of claustrophobic patients. Our aim was to evaluate whether the quality of patient immobilization using the new mask systems was equivalent to the standard mask system currently in use. Thirty-three patients with cerebral target volumes were irradiated using the Hi-Art II tomotherapy system between 2010 and 2012. Each group of 11 patients was fitted with one of the two new mask systems (Crystal registered or Open Face registered mask, Orfit) or the standard three-point mask (Raycast registered -HP, Orfit) and a total of 557 radiotherapy fractions were evaluated. After positioning was checked by MV-CT, the necessary table adjustments were noted. Data were analyzed by comparing the groups, and safety margins were calculated for nonimage-guided irradiation. The mean values of the table adjustments were: (a) lateral (mm): -0.22 (mask 1, standard deviation (σ): 2.15); 1.1 (mask 2, σ: 2.4); -0.64 (mask 3, σ: 2.9); (b) longitudinal (mm): -1 (mask 1, σ: 2.57); -0.5 (mask 2, σ: 4.7); -1.22 (mask 3, σ: 2.52); (c) vertical (mm): 0.62 (mask 1, σ: 0.63); 1.2 (mask 2, σ: 1.0); 0.57 (mask 3, σ: 0.28); (d) roll: 0.35 (mask 1, σ: 0.75); 0 (mask 2, σ: 0.8); 0.02 (mask 3, σ: 1.12). The outcomes suggest necessary safety margins of 5.49-7.38 mm (lateral), 5.4-6.56 mm (longitudinal), 0.82-3.9 mm (vertical), and 1.93-4.5 (roll). There were no significant differences between the groups. The new mask systems improve patient comfort while providing consistent patient positioning. (orig.)

  10. Measurements from preterm infants to guide face mask size.

    Science.gov (United States)

    O'Shea, Joyce E; Thio, Marta; Owen, Louise S; Wong, Connie; Dawson, Jennifer A; Davis, Peter G

    2016-07-01

    International guidelines recommend that an appropriately sized face mask for providing positive pressure ventilation should cover the mouth and nose but not the eyes and should not overlap the chin. This study aimed to measure the dimensions of preterm infants' faces and compare these with the size of the most commonly available face masks (external diameter 50 mm) and the smallest masks available (external diameters 35 and 42 mm). Infants 24-33 weeks' postmenstrual age (PMA) were photographed in a standardised manner. Images were analysed using ImageJ software (National Institute of Health, USA) to calculate the distance from the nasofrontal groove to the mental protuberance. This facial measurement corresponds to the external diameter of an optimally fitting mask. A cohort of 107 infants between 24 and 33 weeks' gestational age, including at least 10 infants per week of gestation, was photographed within 72 h after birth and weekly until 33 weeks' PMA. 347 photographs were analysed. Infants of 24, 26, 28, 30 and 32 weeks' PMA had mean (SD) facial measurements of 32 (2), 36 (3), 38 (4), 41 (2) and 43 (4) mm, respectively. There were no significant differences when examined by gender or when small for gestational age infants were excluded. The smallest size of some brands of mask is too large for many preterm infants. Masks of 35 mm diameter are suitable for infants Masks of 42 mm diameter are suitable for infants 27-33 weeks' PMA or 750-2500 g. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/

  11. Comparison of the OxyMask and Venturi Mask in the Delivery of Supplemental Oxygen: Pilot Study in Oxygen-Dependent Patients

    Directory of Open Access Journals (Sweden)

    Jaime M Beecroft

    2006-01-01

    Full Text Available BACKGROUND: The OxyMask (Southmedic Inc, Canada is a new face mask for oxygen delivery that uses a small ‘diffuser’ to concentrate and direct oxygen toward the mouth and nose. The authors hypothesized that this unique design would enable the OxyMask to deliver oxygen more efficiently than a Venturi mask (Hudson RCI, USA in patients with chronic hypoxemia.

  12. Emergency face-mask removal effectiveness: a comparison of traditional and nontraditional football helmet face-mask attachment systems.

    Science.gov (United States)

    Swartz, Erik E; Belmore, Keith; Decoster, Laura C; Armstrong, Charles W

    2010-01-01

    Football helmet face-mask attachment design changes might affect the effectiveness of face-mask removal. To compare the efficiency of face-mask removal between newly designed and traditional football helmets. Controlled laboratory study. Applied biomechanics laboratory. Twenty-five certified athletic trainers. The independent variable was face-mask attachment system on 5 levels: (1) Revolution IQ with Quick Release (QR), (2) Revolution IQ with Quick Release hardware altered (QRAlt), (3) traditional (Trad), (4) traditional with hardware altered (TradAlt), and (5) ION 4D (ION). Participants removed face masks using a cordless screwdriver with a back-up cutting tool or only the cutting tool for the ION. Investigators altered face-mask hardware to unexpectedly challenge participants during removal for traditional and Revolution IQ helmets. Participants completed each condition twice in random order and were blinded to hardware alteration. Removal success, removal time, helmet motion, and rating of perceived exertion (RPE). Time and 3-dimensional helmet motion were recorded. If the face mask remained attached at 3 minutes, the trial was categorized as unsuccessful. Participants rated each trial for level of difficulty (RPE). We used repeated-measures analyses of variance (α  =  .05) with follow-up comparisons to test for differences. Removal success was 100% (48 of 48) for QR, Trad, and ION; 97.9% (47 of 48) for TradAlt; and 72.9% (35 of 48) for QRAlt. Differences in time for face-mask removal were detected (F(4,20)  =  48.87, P  =  .001), with times ranging from 33.96 ± 14.14 seconds for QR to 99.22 ± 20.53 seconds for QRAlt. Differences were found in range of motion during face-mask removal (F(4,20)  =  16.25, P  =  .001), with range of motion from 10.10° ± 3.07° for QR to 16.91° ± 5.36° for TradAlt. Differences also were detected in RPE during face-mask removal (F(4,20)  =  43.20, P  =  .001), with participants reporting average

  13. Emergency Face-Mask Removal Effectiveness: A Comparison of Traditional and Nontraditional Football Helmet Face-Mask Attachment Systems

    Science.gov (United States)

    Swartz, Erik E.; Belmore, Keith; Decoster, Laura C.; Armstrong, Charles W.

    2010-01-01

    Abstract Context: Football helmet face-mask attachment design changes might affect the effectiveness of face-mask removal. Objective: To compare the efficiency of face-mask removal between newly designed and traditional football helmets. Design: Controlled laboratory study. Setting: Applied biomechanics laboratory. Participants: Twenty-five certified athletic trainers. Intervention(s): The independent variable was face-mask attachment system on 5 levels: (1) Revolution IQ with Quick Release (QR), (2) Revolution IQ with Quick Release hardware altered (QRAlt), (3) traditional (Trad), (4) traditional with hardware altered (TradAlt), and (5) ION 4D (ION). Participants removed face masks using a cordless screwdriver with a back-up cutting tool or only the cutting tool for the ION. Investigators altered face-mask hardware to unexpectedly challenge participants during removal for traditional and Revolution IQ helmets. Participants completed each condition twice in random order and were blinded to hardware alteration. Main Outcome Measure(s): Removal success, removal time, helmet motion, and rating of perceived exertion (RPE). Time and 3-dimensional helmet motion were recorded. If the face mask remained attached at 3 minutes, the trial was categorized as unsuccessful. Participants rated each trial for level of difficulty (RPE). We used repeated-measures analyses of variance (α  =  .05) with follow-up comparisons to test for differences. Results: Removal success was 100% (48 of 48) for QR, Trad, and ION; 97.9% (47 of 48) for TradAlt; and 72.9% (35 of 48) for QRAlt. Differences in time for face-mask removal were detected (F4,20  =  48.87, P  =  .001), with times ranging from 33.96 ± 14.14 seconds for QR to 99.22 ± 20.53 seconds for QRAlt. Differences were found in range of motion during face-mask removal (F4,20  =  16.25, P  =  .001), with range of motion from 10.10° ± 3.07° for QR to 16.91° ± 5.36° for TradAlt. Differences also were detected

  14. An X-ray imager based on silicon microstrip detector and coded mask

    International Nuclear Information System (INIS)

    Del Monte, E.; Costa, E.; Di Persio, G.; Donnarumma, I.; Evangelista, Y.; Feroci, M.; Frutti, M.; Lapshov, I.; Lazzarotto, F.; Mastropietro, M.; Morelli, E.; Pacciani, L.; Porrovecchio, G.; Rapisarda, M.; Rubini, A.; Soffitta, P.; Tavani, M.; Argan, A.

    2007-01-01

    SuperAGILE is the X-ray monitor of AGILE, a satellite mission for gamma-ray astronomy, and it is the first X-ray imaging instrument based on the technology of the silicon microstrip detectors combined with a coded aperture imaging technique. The SuperAGILE detection plane is composed of four 1-D silicon microstrip detector modules, mechanically coupled to tungsten coded mask units. The detector strips are separately and individually connected to the input analogue channels of the front-end electronics, composed of low-noise and low-power consumption VLSI ASIC chips. SuperAGILE can produce 1-D images with 6 arcmin angular resolution and ∼2-3 arcmin localisation capability, for intense sources, in a field of view composed of two orthogonal areas of 107 deg. x 68 deg. The time resolution is 2 μs, the overall dead time is ∼5 μs and the electronic noise is ∼7.5 keV full-width at half-maximum. The resulting instrument is very compact (40x40x14 cm 3 ), light (10 kg) and has low power consumption (12 W). AGILE is a mission of the Agenzia Spaziale Italiana and its launch is planned in 2007 in a low equatorial Earth orbit. In this contribution we present SuperAGILE and discuss its performance and scientific objectives

  15. FY1995 evolvable hardware chip; 1995 nendo shinkasuru hardware chip

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    This project aims at the development of 'Evolvable Hardware' (EHW) which can adapt its hardware structure to the environment to attain better hardware performance, under the control of genetic algorithms. EHW is a key technology to explore the new application area requiring real-time performance and on-line adaptation. 1. Development of EHW-LSI for function level hardware evolution, which includes 15 DSPs in one chip. 2. Application of the EHW to the practical industrial applications such as data compression, ATM control, digital mobile communication. 3. Two patents : (1) the architecture and the processing method for programmable EHW-LSI. (2) The method of data compression for loss-less data, using EHW. 4. The first international conference for evolvable hardware was held by authors: Intl. Conf. on Evolvable Systems (ICES96). It was determined at ICES96 that ICES will be held every two years between Japan and Europe. So the new society has been established by us. (NEDO)

  16. Optical performances of the FM JEM-X masks

    Science.gov (United States)

    Reglero, V.; Rodrigo, J.; Velasco, T.; Gasent, J. L.; Chato, R.; Alamo, J.; Suso, J.; Blay, P.; Martínez, S.; Doñate, M.; Reina, M.; Sabau, D.; Ruiz-Urien, I.; Santos, I.; Zarauz, J.; Vázquez, J.

    2001-09-01

    The JEM-X Signal Multiplexing Systems are large HURA codes "written" in a pure tungsten plate 0.5 mm thick. 24.247 hexagonal pixels (25% open) are spread over a total area of 535 mm diameter. The tungsten plate is embedded in a mechanical structure formed by a Ti ring, a pretensioning system (Cu-Be) and an exoskeleton structure that provides the required stiffness. The JEM-X masks differ from the SPI and IBIS masks on the absence of a code support structure covering the mask assembly. Open pixels are fully transparent to X-rays. The scope of this paper is to report the optical performances of the FM JEM-X masks defined by uncertainties on the pixel location (centroid) and size coming from the manufacturing and assembly processes. Stability of the code elements under thermoelastic deformations is also discussed. As a general statement, JEM-X Mask optical properties are nearly one order of magnitude better than specified in 1994 during the ESA instrument selection.

  17. Cycle time reduction by Html report in mask checking flow

    Science.gov (United States)

    Chen, Jian-Cheng; Lu, Min-Ying; Fang, Xiang; Shen, Ming-Feng; Ma, Shou-Yuan; Yang, Chuen-Huei; Tsai, Joe; Lee, Rachel; Deng, Erwin; Lin, Ling-Chieh; Liao, Hung-Yueh; Tsai, Jenny; Bowhill, Amanda; Vu, Hien; Russell, Gordon

    2017-07-01

    The Mask Data Correctness Check (MDCC) is a reticle-level, multi-layer DRC-like check evolved from mask rule check (MRC). The MDCC uses extended job deck (EJB) to achieve mask composition and to perform a detailed check for positioning and integrity of each component of the reticle. Different design patterns on the mask will be mapped to different layers. Therefore, users may be able to review the whole reticle and check the interactions between different designs before the final mask pattern file is available. However, many types of MDCC check results, such as errors from overlapping patterns usually have very large and complex-shaped highlighted areas covering the boundary of the design. Users have to load the result OASIS file and overlap it to the original database that was assembled in MDCC process on a layout viewer, then search for the details of the check results. We introduce a quick result-reviewing method based on an html format report generated by Calibre® RVE. In the report generation process, we analyze and extract the essential part of result OASIS file to a result database (RDB) file by standard verification rule format (SVRF) commands. Calibre® RVE automatically loads the assembled reticle pattern and generates screen shots of these check results. All the processes are automatically triggered just after the MDCC process finishes. Users just have to open the html report to get the information they need: for example, check summary, captured images of results and their coordinates.

  18. Masked priming effect reflects evidence accumulated by the prime.

    Science.gov (United States)

    Kinoshita, Sachiko; Norris, Dennis

    2010-01-01

    In the same-different match task, masked priming is observed with the same responses but not different responses. Norris and Kinoshita's (2008) Bayesian reader account of masked priming explains this pattern based on the same principle as that explaining the absence of priming for nonwords in the lexical decision task. The pattern of priming follows from the way the model makes optimal decisions in the two tasks; priming does not depend on first activating the prime and then the target. An alternative explanation is in terms of a bias towards responding "same" that exactly counters the facilitatory effect of lexical access. The present study tested these two views by varying both the degree to which the prime predicts the response and the visibility of the prime. Unmasked primes produced effects expected from the view that priming is influenced by the degree to which the prime predicts the response. In contrast, with masked primes, the size of priming for the same response was completely unaffected by predictability. These results rule out response bias as an explanation of the absence of masked priming for different responses and, in turn, indicate that masked priming is not a consequence of automatic lexical access of the prime.

  19. Impact of thermoplastic mask on dosimetry of different radiotherapeutic beams

    International Nuclear Information System (INIS)

    Chen Lixin; Zhang Li; Qian Jianyang; Huang Xiaoyan; Lu Jie; Huang Shaomin

    2003-01-01

    Objective: To determine the influence of auxiliary thermoplastic mask on dose distribution of photon or electron beams. Methods: Using the PTW Marcus 23343 type fixed-separation parallel-plate ionization chamber in a special phantom(PMMA), the change of photon dose buildup region was measured with rectification of Bruce empirical formula. Using 3-D water phantom, the central axis percentage depth doses (PDD) of electron beams were measured with verification of the parallel-plate ionization chamber at several given depths. Results: When 8 MV X-ray was delivered through the added facial mask, the buildup region doses were increased obviously with a 25% relative increment beneath near the surface. When 8, 12, 15 MeV electron beams and mask were used, all PDD curves moved to the surface. Conclusions: The impact of thermoplastic mask on the dose increase in the X-ray buildup region, and on the PDD decrease in the electron beam target region should be paid much more attention. And the dose distribution, with an added mask, will have to be re-evaluated in 3-D conformal radiotherapy

  20. X ray reflection masks: Manufacturing, characterization and first tests

    Science.gov (United States)

    Rahn, Stephen

    1992-09-01

    SXPL (Soft X-ray Projection Lithography) multilayer mirrors are characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors with a 2d in the region of 14 nm were characterized by Cu-k(alpha) grazing incidence as well as soft X-ray normal incidence reflectivity measurements. The multilayer mirrors were patterned by reactive ion etching with CF4 using a photoresist as etch mask, thus producing X-ray reflection masks. The masks were tested at the synchrotron radiation laboratory of the electron accelerator ELSA. A double crystal X-ray monochromator was modified so as to allow about 0.5 sq cm of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto a resist and structure sizes down to 8 micrometers were nicely reproduced. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

  1. Metal oxide multilayer hard mask system for 3D nanofabrication

    Science.gov (United States)

    Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

    2018-02-01

    We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

  2. Automatic pattern localization across layout database and photolithography mask

    Science.gov (United States)

    Morey, Philippe; Brault, Frederic; Beisser, Eric; Ache, Oliver; Röth, Klaus-Dieter

    2016-03-01

    Advanced process photolithography masks require more and more controls for registration versus design and critical dimension uniformity (CDU). The distribution of the measurement points should be distributed all over the whole mask and may be denser in areas critical to wafer overlay requirements. This means that some, if not many, of theses controls should be made inside the customer die and may use non-dedicated patterns. It is then mandatory to access the original layout database to select patterns for the metrology process. Finding hundreds of relevant patterns in a database containing billions of polygons may be possible, but in addition, it is mandatory to create the complete metrology job fast and reliable. Combining, on one hand, a software expertise in mask databases processing and, on the other hand, advanced skills in control and registration equipment, we have developed a Mask Dataprep Station able to select an appropriate number of measurement targets and their positions in a huge database and automatically create measurement jobs on the corresponding area on the mask for the registration metrology system. In addition, the required design clips are generated from the database in order to perform the rendering procedure on the metrology system. This new methodology has been validated on real production line for the most advanced process. This paper presents the main challenges that we have faced, as well as some results on the global performances.

  3. Objective measures of binaural masking level differences and comodulation masking release based on late auditory evoked potentials.

    Science.gov (United States)

    Epp, Bastian; Yasin, Ifat; Verhey, Jesko L

    2013-12-01

    The audibility of important sounds is often hampered due to the presence of other masking sounds. The present study investigates if a correlate of the audibility of a tone masked by noise is found in late auditory evoked potentials measured from human listeners. The audibility of the target sound at a fixed physical intensity is varied by introducing auditory cues of (i) interaural target signal phase disparity and (ii) coherent masker level fluctuations in different frequency regions. In agreement with previous studies, psychoacoustical experiments showed that both stimulus manipulations result in a masking release (i: binaural masking level difference; ii: comodulation masking release) compared to a condition where those cues are not present. Late auditory evoked potentials (N1, P2) were recorded for the stimuli at a constant masker level, but different signal levels within the same set of listeners who participated in the psychoacoustical experiment. The data indicate differences in N1 and P2 between stimuli with and without interaural phase disparities. However, differences for stimuli with and without coherent masker modulation were only found for P2, i.e., only P2 is sensitive to the increase in audibility, irrespective of the cue that caused the masking release. The amplitude of P2 is consistent with the psychoacoustical finding of an addition of the masking releases when both cues are present. Even though it cannot be concluded where along the auditory pathway the audibility is represented, the P2 component of auditory evoked potentials is a candidate for an objective measure of audibility in the human auditory system. Copyright © 2013 Elsevier B.V. All rights reserved.

  4. Supply chains of forest chip production in Finland

    Energy Technology Data Exchange (ETDEWEB)

    Kaerhae, Kalle (Metsaeteho Oy, Helsinki (Finland)), e-mail: kalle.karha@metsateho.fi

    2010-07-15

    The Metsaeteho study investigated how logging residue chips, stump wood chips, and chips from small sized thinning wood and large-sized (rotten) roundwood used by heating and power plants were produced in Finland in 2008. Almost all the major forest chip suppliers in Finland were involved in the study. The total volume of forest chips supplied in 2008 by these suppliers was 6.5 TWh. The study was implemented by conducting an e-mail questionnaire survey and telephone interviews. Research data was collected in March-May 2009. The majority of the logging residue chips and chips from small-sized thinning wood were produced using the roadside chipping supply chain in Finland in 2008. The chipping at plant supply chain was also significant in the production of logging residue chips. 70% of all stump wood chips consumed were comminuted at the plant and 29% at terminals. The role of the terminal chipping supply chain was also significant in the production of chips from logging residues and small-sized wood chips. When producing chips from large-sized (rotten) roundwood, nearly a half of chips were comminuted at plants and more than 40% at terminals

  5. Supply systems of forest chip production in Finland

    Energy Technology Data Exchange (ETDEWEB)

    Kaerhae, K. (Metsaeteho Oy, Helsinki (Finland)), e-mail: kalle.karha@metsateho.fi

    2010-07-01

    The Metsaeteho study investigated how logging residue chips, stump wood chips, and chips from small-diameter thinning wood and large-sized (rotten) roundwood used by heating and power plants were produced in Finland in 2009. Almost all the major forest chip suppliers in Finland were involved in the study. The total volume of forest chips supplied in 2009 by these suppliers was 8,4 TWh. The study was implemented by conducting an e-mail questionnaire survey and telephone interviews. Research data was collected from March-May, 2010. The majority of the logging residue chips and chips from small-diameter thinning wood were produced using the roadside chipping supply system in Finland in 2009. The chipping at plant supply system was also significant in the production of logging residue chips. Nearly 70 % of all stump wood chips consumed were comminuted at the plant and 28 % at terminals. The role of the terminal chipping supply system was also significant in the production of chips from logging residues and small-diameter wood chips. When producing chips from large-sized (rotten) roundwood, similarly roughly 70 % of chips were comminuted at plants and 23 % at terminals. (orig.)

  6. Supply chains of forest chip production in Finland

    Energy Technology Data Exchange (ETDEWEB)

    Kaerhae, K. (Metsaeteho Oy, Helsinki (Finland)), Email: kalle.karha@metsateho.fi

    2009-07-01

    The Metsaeteho study investigated how logging residue chips. stump wood chips, and chips from small-sized thinning wood and large-sized (rotten) roundwood used by heating and power plants were produced in Finland in 2008. Almost all the major forest chip suppliers in Finland were involved in the study. The total volume of forest chips supplied in 2008 by these suppliers was 6,5 TWh. The study was implemented by conducting an e-mail questionnaire survey and telephone interviews. Research data was collected in March-May 2009. The majority of the logging residue chips and chips from small-sized thinning wood were produced using the roadside chipping supply chain in Finland in 2008. The chipping at plant supply chain was also significant in the production of logging residue chips. 70% of all stump wood chips consumed were comminuted at the plant and 29% at terminals. The role of the terminal chipping supply chain was also significant in the production of chips from logging residues and small-sized wood chips. When producing chips from large-sized (rotten) roundwood, nearly a half of chips were comminuted at plants and more than 40 % at terminals. (orig.)

  7. Experiment list: SRX122563 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  8. Experiment list: SRX122564 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  9. Experiment list: SRX122488 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf3 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 h

  10. Experiment list: SRX122510 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Egr1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog... number 1=ab54966-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-110 ht

  11. Experiment list: SRX122491 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 htt

  12. Experiment list: SRX122519 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http:

  13. Experiment list: SRX122548 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody... catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A

  14. Experiment list: SRX122468 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Rela || treatment=LPS || time=0 min || chip antibody manufacturer 1=Bethyl || chip antibody catalo...g number 1=A301-824A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-372 htt

  15. Experiment list: SRX122561 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  16. Experiment list: SRX122551 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ca...talog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A htt

  17. Experiment list: SRX122409 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Irf1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody cata...log number 1=ab52520 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-640 htt

  18. Experiment list: SRX122487 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf3 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 h

  19. Experiment list: SRX122546 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody ...catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A h

  20. Experiment list: SRX122552 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibo...dy catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753

  1. Experiment list: SRX122547 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A ht

  2. Experiment list: SRX214084 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available turer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...ge=Undifferentiated || treatment=Overexpress Sox17-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufac

  3. Experiment list: SRX122472 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Runx1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab61753 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-8564 http

  4. Experiment list: SRX122544 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A ht

  5. Experiment list: SRX122408 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Irf1 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab52520 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-640 http

  6. Experiment list: SRX122473 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Runx1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody ca...talog number 1=ab61753 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-8564

  7. Experiment list: SRX122513 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Egr1 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab54966-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-110

  8. Experiment list: SRX214077 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available erentiated || treatment=Overexpress Sox17_V5 tagged || cell line=KH2 || chip antibody 1=Sox17 || chip antibody manufacture...r 1=R&D || chip antibody 2=V5 || chip antibody manufacturer 2=Invit

  9. Experiment list: SRX122497 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Rel || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-70 http:

  10. Experiment list: SRX214082 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available facturer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...age=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manu

  11. Experiment list: SRX122410 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog n...umber 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://db

  12. Experiment list: SRX122567 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Stat2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody cat...alog number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 ht

  13. Experiment list: SRX122466 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Relb || treatment=LPS || time=30 min || chip antibody manufacturer 1=Bethyl || chip antibody cata...log number 1=A302-183A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-226 h

  14. Experiment list: SRX122490 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 htt

  15. Experiment list: SRX214068 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available inoic acid || cell line=F9 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufacturer 1=Santa Cruz || chip... antibody 2=none || chip antibody manufacturer 2=none http://dbarchive.biosciencedbc.jp/kyushu-u/mm9/eachDat

  16. Experiment list: SRX122558 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antib...ody catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-75

  17. Experiment list: SRX122494 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hip antibody=Atf4 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody ca...talog number 1=ab28830-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-2

  18. Experiment list: SRX122545 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody c...atalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A ht

  19. Experiment list: SRX186172 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available 1=YY1 || chip antibody manufacturer 1=Abcam || chip antibody 2=YY1 || chip antibody manufacturer 2=Santa Cru...ip-Seq; Mus musculus; ChIP-Seq source_name=Rag1 -/- pro-B cells || chip antibody

  20. Experiment list: SRX122557 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available hip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antib...ody catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-75

  1. Experiment list: SRX122492 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 htt

  2. Experiment list: SRX122493 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Atf4 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab28830-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-200

  3. Experiment list: SRX122571 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Stat2 || treatment=LPS || time=30 min || chip antibody manufacturer 1=Abcam || chip antibody catal...og number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 http

  4. Experiment list: SRX122411 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Junb || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog n...umber 1=ab28838 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-46 http://db

  5. Experiment list: SRX122549 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody... catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753A

  6. Experiment list: SRX122498 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Rel || treatment=LPS || time=60 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cat...alog number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-70 http:

  7. Experiment list: SRX122516 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available antibody=Irf2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody catalo...g number 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http:

  8. Experiment list: SRX122484 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Atf3 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody cata...log number 1=sc-188 || chip antibody manufacturer 2=Abcam || chip antibody catalog number 2=ab70005-100 http

  9. Experiment list: SRX122514 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available tibody=Irf2 || treatment=LPS || time=0 min || chip antibody manufacturer 1=Abcam || chip antibody catalog nu...mber 1=ab65048 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-498 http://db

  10. Experiment list: SRX122570 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available p antibody=Stat2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody cat...alog number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 ht

  11. Experiment list: SRX214080 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available cturer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...ge=Undifferentiated || treatment=Overexpress Sox2KE-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufa

  12. Experiment list: SRX122569 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat2 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody ca...talog number 1=ab53149 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-839 h

  13. Experiment list: SRX122511 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Egr1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Abcam || chip antibody cat...alog number 1=ab54966-100 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-11

  14. Experiment list: SRX122471 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Rela || treatment=LPS || time=60 min || chip antibody manufacturer 1=Bethyl || chip antibody cat...alog number 1=A301-824A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-372

  15. Experiment list: SRX122495 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ntibody=Rel || treatment=LPS || time=0 min || chip antibody manufacturer 1=Santa Cruz || chip antibody catal...og number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc-70 http://

  16. Experiment list: SRX122554 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available ip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip antibo...dy catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-753

  17. Experiment list: SRX214081 [Chip-atlas[Archive

    Lifescience Database Archive (English)

    Full Text Available cturer 1=Santa Cruz || chip antibody 2=V5 || chip antibody manufacture...ge=Undifferentiated || treatment=Overexpress Sox2KE-V5 tagged || cell line=KH2 || chip antibody 1=Pou5f1/Oct4 || chip antibody manufa

  18. Video encryption using chaotic masks in joint transform correlator

    Science.gov (United States)

    Saini, Nirmala; Sinha, Aloka

    2015-03-01

    A real-time optical video encryption technique using a chaotic map has been reported. In the proposed technique, each frame of video is encrypted using two different chaotic random phase masks in the joint transform correlator architecture. The different chaotic random phase masks can be obtained either by using different iteration levels or by using different seed values of the chaotic map. The use of different chaotic random phase masks makes the decryption process very complex for an unauthorized person. Optical, as well as digital, methods can be used for video encryption but the decryption is possible only digitally. To further enhance the security of the system, the key parameters of the chaotic map are encoded using RSA (Rivest-Shamir-Adleman) public key encryption. Numerical simulations are carried out to validate the proposed technique.

  19. Video encryption using chaotic masks in joint transform correlator

    International Nuclear Information System (INIS)

    Saini, Nirmala; Sinha, Aloka

    2015-01-01

    A real-time optical video encryption technique using a chaotic map has been reported. In the proposed technique, each frame of video is encrypted using two different chaotic random phase masks in the joint transform correlator architecture. The different chaotic random phase masks can be obtained either by using different iteration levels or by using different seed values of the chaotic map. The use of different chaotic random phase masks makes the decryption process very complex for an unauthorized person. Optical, as well as digital, methods can be used for video encryption but the decryption is possible only digitally. To further enhance the security of the system, the key parameters of the chaotic map are encoded using RSA (Rivest–Shamir–Adleman) public key encryption. Numerical simulations are carried out to validate the proposed technique. (paper)

  20. Masked depression: its interrelations with somatization, hypochondriasis and conversion.

    Science.gov (United States)

    Fisch, R Z

    1987-01-01

    Masked depression appears to be a common clinical phenomenon. Most depressions present with some somatic complaints in addition to affective and cognitive ones. About one half of all depressions seen by primary care physicians initially present predominantly or exclusively with somatic symptoms. Many of these depressions are not recognized or are misdiagnosed and mistreated. The possible reasons for this are discussed here. The phenomenon of somatization in depressions and other conditions is reviewed and the interface with other related clinical problems like hypochondriasis and conversion is delineated. It is hypothesized that the proportion of depressions that are masked is positively correlated to the patients' tendency to somatize and negatively correlated to the doctors' ability to recognize depressions that hide behind somatic complaints. Suggestions for the diagnosis and treatment of masked depressions are given.