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Sample records for self-aligned barrier layer

  1. Self-aligned metallization on organic semiconductor through 3D dual-layer thermal nanoimprint

    International Nuclear Information System (INIS)

    Jung, Y; Cheng, X

    2014-01-01

    High-resolution patterning of metal structures on organic semiconductors is important to the realization of high-performance organic transistors for organic integrated circuit applications. The traditional shadow mask technique has a limited resolution, precluding sub-micron metal structures on organic semiconductors. Thus organic transistors cannot benefit from scaling into the deep sub-micron region to improve their dc and ac performances. In this work, we report an efficient multiple-level metallization on poly (3-hexylthiophene) (P3HT) with a deep sub-micron lateral gap. By using a 3D nanoimprint mold in a dual-layer thermal nanoimprint process, we achieved self-aligned two-level metallization on P3HT. The 3D dual-layer thermal nanoimprint enables the first metal patterns to have suspending side-wings that can clearly define a distance from the second metal patterns. Isotropic and anisotropic side-wing structures can be fabricated through two different schemes. The process based on isotropic side-wings achieves a lateral-gap in the order of 100 nm (scheme 1). A gap of 60 nm can be achieved from the process with anisotropic side-wings (scheme 2). Because of the capability of nanoscale metal patterning on organic semiconductors with high overlay accuracy, this self-aligned metallization technique can be utilized to fabricate high-performance organic metal semiconductor field-effect transistor. (paper)

  2. P-6 : Impact of buffer layers on the self-aligned top-gate a-IGZO TFT characteristics

    NARCIS (Netherlands)

    Nag, M.; en de rest

    2015-01-01

    In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT

  3. Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

    Science.gov (United States)

    Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

    2018-04-01

    An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

  4. Spray coating of self-aligning passivation layer for metal grid lines

    NARCIS (Netherlands)

    Vuorinen, T.; Janka, M.; Rubingh, J.E.J.M.; Tuukkanen, S.; Groen, P.; Lupo, D.

    2014-01-01

    In applications such as organic light emitting diodes (OLEDs) or photovoltaic cells a homogenous voltage distribution in the large anode layer needs to be ensured by including a metal grid with a transparent conductor layer. To ensure sufficient conductivity, relatively thick metal lines are used,

  5. Self-aligned periodic Ni nano dots embedded in nano-oxide layer

    International Nuclear Information System (INIS)

    Doi, M.; Izumi, M.; Kawasaki, S.; Miyake, K.; Sahashi, M.

    2007-01-01

    The Ni nano constriction dots embedded in the Ta-nano-oxide layer (NOL) was prepared by the ion beam sputtering (IBS) method. After the various conditions of the oxidations, the structural analyses of the NOL were performed by RHEED, AES and in situ STM/AFM observations. From the current image of the conductive AFM for NOL, the periodically aligned metallic dots with the size around 5-10 nm were successfully observed. The mechanism of the formation of the self-organized aligned Ni nano constriction dots is discussed from the standpoint of the grain size, the crystal orientation, the preferred oxidation of Ta at the diffused interface

  6. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  7. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-08-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

  8. A self-aligned gate definition process with submicron gaps

    NARCIS (Netherlands)

    Warmerdam, L.F.P.; Aarnink, Antonius A.I.; Holleman, J.; Wallinga, Hans

    1989-01-01

    A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and smaller are fabricated. The spacing is realized by an edge-etch technique, combined with anisotropic plasma etching of the single poly-silicon layer. Straight gaps with minor width variation are

  9. Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

    KAUST Repository

    Wan, Weiwei; Lin, Liang; Xu, Yelong; Guo, Xu; Liu, Xiaoping; Ge, Haixiong; Lu, Minghui; Cui, Bo; Chen, Yanfeng

    2014-01-01

    manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage

  10. On the porosity of barrier layers

    Directory of Open Access Journals (Sweden)

    J. Mignot

    2009-09-01

    Full Text Available Barrier layers are defined as the layer between the pycnocline and the thermocline when the latter are different as a result of salinity stratification. We present a revisited 2-degree resolution global climatology of monthly mean oceanic Barrier Layer (BL thickness first proposed by de Boyer Montégut et al. (2007. In addition to using an extended data set, we present a modified computation method that addresses the observed porosity of BLs. We name porosity the fact that barrier layers distribution can, in some areas, be very uneven regarding the space and time scales that are considered. This implies an intermittent alteration of air-sea exchanges by the BL. Therefore, it may have important consequences for the climatic impact of BLs. Differences between the two computation methods are small for robust BLs that are formed by large-scale processes. However, the former approach can significantly underestimate the thickness of short and/or localized barrier layers. This is especially the case for barrier layers formed by mesoscale mechanisms (under the intertropical convergence zone for example and along western boundary currents and equatorward of the sea surface salinity subtropical maxima. Complete characterisation of regional BL dynamics therefore requires a description of the robustness of BL distribution to assess the overall impact of BLs on the process of heat exchange between the ocean interior and the atmosphere.

  11. Barrier layer arrangement for conductive layers on silicon substrates

    International Nuclear Information System (INIS)

    Hung, L.S.; Agostinelli, J.A.

    1990-01-01

    This patent describes a circuit element comprised of a silicon substrate and a conductive layer located on the substrate. It is characterized in that the conductive layer consists essentially of a rare earth alkaline earth copper oxide and a barrier layer triad is interposed between the silicon substrate and the conductive layer comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of a least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at lease one Group 4 heavy metal oxide

  12. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  13. Pattern optimizing verification of self-align quadruple patterning

    Science.gov (United States)

    Yamato, Masatoshi; Yamada, Kazuki; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shouhei; Koike, Kyohei; Yaegashi, Hidetami

    2017-03-01

    Lithographic scaling continues to advance by extending the life of 193nm immersion technology, and spacer-type multi-patterning is undeniably the driving force behind this trend. Multi-patterning techniques such as self-aligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) have come to be used in memory devices, and they have also been adopted in logic devices to create constituent patterns in the formation of 1D layout designs. Multi-patterning has consequently become an indispensible technology in the fabrication of all advanced devices. In general, items that must be managed when using multi-patterning include critical dimension uniformity (CDU), line edge roughness (LER), and line width roughness (LWR). Recently, moreover, there has been increasing focus on judging and managing pattern resolution performance from a more detailed perspective and on making a right/wrong judgment from the perspective of edge placement error (EPE). To begin with, pattern resolution performance in spacer-type multi-patterning is affected by the process accuracy of the core (mandrel) pattern. Improving the controllability of CD and LER of the mandrel is most important, and to reduce LER, an appropriate smoothing technique should be carefully selected. In addition, the atomic layer deposition (ALD) technique is generally used to meet the need for high accuracy in forming the spacer film. Advances in scaling are accompanied by stricter requirements in the controllability of fine processing. In this paper, we first describe our efforts in improving controllability by selecting the most appropriate materials for the mandrel pattern and spacer film. Then, based on the materials selected, we present experimental results on a technique for improving etching selectivity.

  14. A novel micromachined shadow mask system with self-alignment and gap control capability

    International Nuclear Information System (INIS)

    Hong, Jung Moo; Zou Jun

    2008-01-01

    We present a novel micromachined shadow mask system, which is capable of accurate self-alignment and mask-substrate gap control. The shadow mask system consists of a silicon shadow mask and a silicon carrier wafer with pyramidal cavities fabricated with bulk micromachining. Self-alignment and gap control of the shadow mask and the fabrication substrate can readily be achieved by using matching pairs of pyramidal cavities and steel spheres placed between. The layer-to-layer alignment accuracy of the new shadow mask system has been experimentally characterized and verified using both optical and atomic force microscopic measurements. As an application of this new shadow mask system, an organic thin-film transistor (OTFT) using pentacene as the semiconductor layer has been successfully fabricated and tested

  15. Ocean barrier layers' effect on tropical cyclone intensification.

    Science.gov (United States)

    Balaguru, Karthik; Chang, Ping; Saravanan, R; Leung, L Ruby; Xu, Zhao; Li, Mingkui; Hsieh, Jen-Shan

    2012-09-04

    Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are "quasi-permanent" features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.

  16. Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

    International Nuclear Information System (INIS)

    Chen, G-L; Kuo, David M T; Lai, W-T; Li, P-W

    2007-01-01

    We have fabricated a Ge quantum dot (QD) (∼10 nm) single-hole transistor with self-aligned electrodes using thermal oxidation of a SiGe-on-insulator nanowire based on FinFET technology. This fabricated device exhibits clear Coulomb blockade oscillations with large peak-to-valley ratio (PVCR) of 250-750 and negative differential conductance with PVCR of ∼12 at room temperature. This reveals that the gate-induced tunneling barrier lowering is effectively suppressed due to the self-aligned electrode structure. The magnitude of tunneling current spectra also reveals the coupling strengths between the energy levels of the Ge QD and electrodes

  17. Self-Aligned van der Waals Heterojunction Diodes and Transistors.

    Science.gov (United States)

    Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

    2018-02-14

    A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

  18. Layer-by-layer assembly of thin film oxygen barrier

    International Nuclear Information System (INIS)

    Jang, Woo-Sik; Rawson, Ian; Grunlan, Jaime C.

    2008-01-01

    Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation ( 2 /day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging

  19. Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

    KAUST Repository

    Wan, Weiwei

    2014-03-01

    Nanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials. © 2014 Springer-Verlag Berlin Heidelberg.

  20. Capillary Self-Alignment of Microchips on Soft Substrates

    Directory of Open Access Journals (Sweden)

    Bo Chang

    2016-03-01

    Full Text Available Soft micro devices and stretchable electronics have attracted great interest for their potential applications in sensory skins and wearable bio-integrated devices. One of the most important steps in building printed circuits is the alignment of assembled micro objects. Previously, the capillary self-alignment of microchips driven by surface tension effects has been shown to be able to achieve high-throughput and high-precision in the integration of micro parts on rigid hydrophilic/superhydrophobic patterned surfaces. In this paper, the self-alignment of microchips on a patterned soft and stretchable substrate, which consists of hydrophilic pads surrounded by a superhydrophobic polydimethylsiloxane (PDMS background, is demonstrated for the first time. A simple process has been developed for making superhydrophobic soft surface by replicating nanostructures of black silicon onto a PDMS surface. Different kinds of PDMS have been investigated, and the parameters for fabricating superhydrophobic PDMS have been optimized. A self-alignment strategy has been proposed that can result in reliable self-alignment on a soft PDMS substrate. Our results show that capillary self-alignment has great potential for building soft printed circuits.

  1. A study on water infiltration barriers with compacted layered soils

    International Nuclear Information System (INIS)

    Umeda, Y.; Komori, K.; Fujiwara, A.

    1993-01-01

    In shallow-ground disposal of low-level radioactive wastes, water movements due to natural processes in the soil covering the disposal facility must be properly controlled. A capillary barrier with compacted layered soils can provide an effective means of controlling water movement in the soil covering placed on a low-level radioactive waste disposal facility. An experiment was performed to determine the effectiveness of a full-scale fill as a capillary barrier. The fill used in the experiment was constructed of compacted layers of clay, fine sand, and gravel. Man-made rain was caused to fall on the surfaces of the fill to observe the infiltration of rainwater into the fill and to measure the amount of water drained from within. The experiment established the effectiveness of the capillary barrier

  2. Wave drag reduction due to a self-aligning aerodisk

    Science.gov (United States)

    Schnepf, Ch.; Wysocki, O.; Schülein, E.

    2015-06-01

    The effect of a self-aligning aerodisk on the wave drag of a blunt slender body in a pitching maneuver has been numerically investigated. The self-alignment was realized by a coupling of the flow solver and a flight mechanics tool. The slender body was pitched with high repetition rate between α = 0° and 20° at M = 1.41. Even at high α, the concept could align the aerodisk to the oncoming flow. In comparison to the reference body without a self-aligning aerodisk, a distinct drag reduction is achieved. A comparison with existing experimental data shows a qualitatively good agreement considering the shock and separation structure and the kinematics of the aerodisk.

  3. Method for Providing Semiconductors Having Self-Aligned Ion Implant

    Science.gov (United States)

    Neudeck, Philip G. (Inventor)

    2014-01-01

    A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.

  4. Self-aligning fixture used in lathe chuck jaw refacing

    Science.gov (United States)

    Linn, C. C.

    1965-01-01

    Self-aligning tool positions and rigidly holds lathe chuck jaws for refacing and truing of the clamping surface. The jaws clamp the fixture in the manner of clamping a workpiece. The fixture can be modified to accommodate four-jawed checks.

  5. Aluminum oxide barrier coating on polyethersulfone substrate by atomic layer deposition for barrier property enhancement

    International Nuclear Information System (INIS)

    Kim, Hyun Gi; Kim, Sung Soo

    2011-01-01

    Aluminum oxide layers were deposited on flexible polyethersulfone (PES) substrates via plasma enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and oxygen as precursor and reactant materials. Several process parameters in PEALD process were investigated in terms of refractive index and layer thickness. Number of process cycle increased the thickness and refractive index of the layer to enhance the barrier properties. Non-physisorbed TMA and unreacted oxygen were purged before and after the plasma reaction, respectively. Identical purge time was applied to TMA and oxygen and it was optimized for 10 s. Thinner and denser layer was formed as substrate temperature increased. However, the PES substrate could be deformed above 120 o C. Aluminum oxide layer formed on PES at optimized conditions have 11.8 nm of thickness and reduced water vapor transmission rate and oxygen transmission rate to below 4 x 10 -3 g/m 2 day and 4 x 10 -3 cm 3 /m 2 day, respectively. Polycarbonate and polyethylene naphthalate films were also tested at optimized conditions, and they also showed quite appreciable barrier properties to be used as plastic substrates.

  6. Self-Aligned Metal Electrodes in Fully Roll-to-Roll Processed Organic Transistors

    Directory of Open Access Journals (Sweden)

    Marja Vilkman

    2016-01-01

    Full Text Available We demonstrate the production of organic bottom gate transistors with self-aligned electrodes, using only continuous roll-to-roll (R2R techniques. The self-alignment allows accurate <5 µm layer-to-layer registration, which is usually a challenge in high-speed R2R environments as the standard registration methods are limited to the millimeter range—or, at best, to tens of µm if online cameras and automatic web control are utilized. The improved registration enables minimizing the overlap between the source/drain electrodes and the gate electrode, which is essential for minimizing the parasitic capacitance. The complete process is a combination of several techniques, including evaporation, reverse gravure, flexography, lift-off, UV exposure and development methods—all transferred to a continuous R2R pilot line. Altogether, approximately 80 meters of devices consisting of thousands of transistors were manufactured in a roll-to-roll fashion. Finally, a cost analysis is presented in order to ascertain the main costs and to predict whether the process would be feasible for the industrial production of organic transistors.

  7. Recombination barrier layers in solid-state quantum dot-sensitized solar cells

    KAUST Repository

    Roelofs, Katherine E.; Brennan, Thomas P.; Dominguez, Juan C.; Bent, Stacey F.

    2012-01-01

    in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer

  8. Design and fabrication of a self-aligned parallel-plate-type silicon micromirror minimizing the effect of misalignment

    International Nuclear Information System (INIS)

    Yoo, Byung-Wook; Jin, Joo-Young; Jang, Yun-Ho; Kim, Yong-Kweon; Park, Jae-Hyoung

    2009-01-01

    This paper describes a self-alignment method whereby a mirror actuation voltage, corresponding to a specific tilting angle, is unvarying in terms of misalignment during fabrication. A deep silicon etching process is proposed to penetrate the top silicon layer (the micromirror layer) and an amorphous silicon layer (the addressing electrode layer) together, through an aluminum mask pattern, in order to minimize the misalignment effect on the micromirror actuation. The size of a fabricated mirror plate is 250 × 250 × 4 µm 3 . A pair of amorphous silicon electrodes under the mirror plate is about half the size of the mirror plate individually. Numerical analysis associated with calculating the pull-in voltage and the bonding misalignment is performed to verify the self-alignment concepts focused upon in this paper. Curves of the applied voltage versus the tilt angle of the self-aligned micromirror are observed using a position sensing detector in order to compare the measurement results with MATLAB analysis of the expected static deflections. Although a 3.7 µm misalignment is found between the mirror plate and the electrodes, in the direction perpendicular to the shallow trench of the electrodes, before the self-alignment process, the measured pull-in voltage has been found to be 103.4 V on average; this differs from the pull-in voltage of a perfectly aligned micromirror by only 0.67%. Regardless of the unpredictable misalignments in repetitive photolithography and bonding, the tilting angles corresponding to the driving voltages are proved to be uniform along the single axis as well as conform to the results of analytical analysis

  9. Self-aligning and compressed autosophy video databases

    Science.gov (United States)

    Holtz, Klaus E.

    1993-04-01

    Autosophy, an emerging new science, explains `self-assembling structures,' such as crystals or living trees, in mathematical terms. This research provides a new mathematical theory of `learning' and a new `information theory' which permits the growing of self-assembling data network in a computer memory similar to the growing of `data crystals' or `data trees' without data processing or programming. Autosophy databases are educated very much like a human child to organize their own internal data storage. Input patterns, such as written questions or images, are converted to points in a mathematical omni dimensional hyperspace. The input patterns are then associated with output patterns, such as written answers or images. Omni dimensional information storage will result in enormous data compression because each pattern fragment is only stored once. Pattern recognition in the text or image files is greatly simplified by the peculiar omni dimensional storage method. Video databases will absorb input images from a TV camera and associate them with textual information. The `black box' operations are totally self-aligning where the input data will determine their own hyperspace storage locations. Self-aligning autosophy databases may lead to a new generation of brain-like devices.

  10. The effect of barrier layer-mediated catalytic deactivation in vertically aligned carbon nanotube growth

    International Nuclear Information System (INIS)

    Patole, S P; Yu, Seong-Man; Shin, Dong-Wook; Yoo, Ji-Beom; Kim, Ha-Jin; Han, In-Taek; Kwon, Kee-Won

    2010-01-01

    The effect of Al-barrier layer-mediated Fe-catalytic deactivation in vertically aligned carbon nanotube (CNT) growth was studied. The substrate surface morphology, catalytic diffusion and barrier layer oxidation were found to be dependent on the annealing temperature of the barrier layer, which ultimately affects CNT growth. The annealed barrier layer without complete oxidation was found to be suitable for top to bottom super aligned CNT arrays. The highest average CNT growth rate of up to 3.88 μm s -1 was observed using this simple approach. Details of the analysis are also presented.

  11. Investigation of anodizing parameter effect on barrier layer of anodic zirconium oxide

    International Nuclear Information System (INIS)

    Kharchenko, Eh.P.

    1979-01-01

    Effect of fluoride concentration and forming direction upon kinetics of barrier layer transformations in the process of preparation of phase anodic zirconium oxide in acid fluorine-containing solutions is considered. Suppositions are made on the mechanism of barrier layer transformation under the effect of the parameters mentioned. The thickness of the barrier layer is determined by two methods and it is shown that coefficient of the layer thickess growth at the voltage increase by 1 V is much lower than during formation of the barrier films in non-agressive electrolytes

  12. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen; Tuteja, Mohit; Kesaria, Manoj; Waghmare, U. V.; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064 (India)

    2012-09-24

    We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si{sub 3}N{sub 4} intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

  13. Understanding the critical challenges of self-aligned octuple patterning

    Science.gov (United States)

    Yu, Ji; Xiao, Wei; Kang, Weiling; Chen, Yijian

    2014-03-01

    In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process characteristics, cost structure, integration challenges, and layout decomposition. The statistical characteristics of SAOP CD variations such as multi-modality are analyzed and contributions from various features to CDU and MTT (mean-to-target) budgets are estimated. The gap space is found to have the worst CDU+MTT performance and is used to determine the required overlay accuracy to ensure a satisfactory edge-placement yield of a cut process. Moreover, we propose a 5-mask positive-tone SAOP (pSAOP) process for memory FEOL patterning and a 3-mask negative-tone SAOP (nSAOP) process for logic BEOL patterning. The potential challenges of 2-D SAOP layout decomposition for BEOL applications are identified. Possible decomposition approaches are explored and the functionality of several developed algorithm is verified using 2-D layout examples from Open Cell Library.

  14. UV-LIGA technique for ECF micropumps using back UV exposure and self-alignment

    Science.gov (United States)

    Han, D.; Xia, Y.; Yokota, S.; Kim, J. W.

    2017-12-01

    This paper proposes and develops a novel UV-LIGA technique using back UV exposure and self-alignment to realize high aspect ratio micromachining (HARM) in high power density electro-conjugate fluid (ECF) micropumps. ECF is a functional fluid designed to be able to generate strong and active jet flow (ECF jetting) between anode and cathode in ECF when high DC voltage is applied. We have developed high power density ECF micropumps consisting of triangular prism and slit electrode pairs (TPSEs) fabricated by HARM. The traditional UV-LIGA technique for HARM is mainly divided into two approaches: (a) single thick layer and (b) multiple thin layers. Both methods have limitations—deformed molds in the former and misalignment between layers in the latter. Using the finite element method software COMSOL Multiphysics, we demonstrate that the deformed micro-molds critically impair the performance of ECF micropumps. In addition, we experimentally prove that the misalignment would easily trigger electric discharge in the ECF micropumps. To overcome these limitations, we conceive a new concept utilizing the seed electrode layer for electroforming as the UV shield and pattern photoresist (KMPR) by back UV exposure. The seed electrode layer should be composed of a non-transparent conductor (Au/Ti) for patterning and a transparent conductor (ITO) for wiring. Instead of ITO, we propose the concept of transparency-like electrodes comprised of thin metal line patterns. To verify this concept, KMPR layers with thicknesses of 70, 220, and 500 µm are experimentally investigated. In the case of 500 µm KMPR thickness, the concept of transparency-like electrode was partially proved. As a result, TPSEs with a height of 440 µm were successfully fabricated. Characteristic experiments demonstrated that ECF micropumps (367 mW cm-3) fabricated by back UV achieved almost the same output power density as ECF micropumps (391 mW cm-3) fabricated by front UV. This paper proves that the proposed

  15. UV-LIGA technique for ECF micropumps using back UV exposure and self-alignment

    International Nuclear Information System (INIS)

    Han, D; Xia, Y; Yokota, S; Kim, J W

    2017-01-01

    This paper proposes and develops a novel UV-LIGA technique using back UV exposure and self-alignment to realize high aspect ratio micromachining (HARM) in high power density electro-conjugate fluid (ECF) micropumps. ECF is a functional fluid designed to be able to generate strong and active jet flow (ECF jetting) between anode and cathode in ECF when high DC voltage is applied. We have developed high power density ECF micropumps consisting of triangular prism and slit electrode pairs (TPSEs) fabricated by HARM. The traditional UV-LIGA technique for HARM is mainly divided into two approaches: (a) single thick layer and (b) multiple thin layers. Both methods have limitations—deformed molds in the former and misalignment between layers in the latter. Using the finite element method software COMSOL Multiphysics, we demonstrate that the deformed micro-molds critically impair the performance of ECF micropumps. In addition, we experimentally prove that the misalignment would easily trigger electric discharge in the ECF micropumps. To overcome these limitations, we conceive a new concept utilizing the seed electrode layer for electroforming as the UV shield and pattern photoresist (KMPR) by back UV exposure. The seed electrode layer should be composed of a non-transparent conductor (Au/Ti) for patterning and a transparent conductor (ITO) for wiring. Instead of ITO, we propose the concept of transparency-like electrodes comprised of thin metal line patterns. To verify this concept, KMPR layers with thicknesses of 70, 220, and 500 µ m are experimentally investigated. In the case of 500 µ m KMPR thickness, the concept of transparency-like electrode was partially proved. As a result, TPSEs with a height of 440 µ m were successfully fabricated. Characteristic experiments demonstrated that ECF micropumps (367 mW cm −3 ) fabricated by back UV achieved almost the same output power density as ECF micropumps (391 mW cm −3 ) fabricated by front UV. This paper proves that the

  16. Phase characterization of Re-based diffusion barrier layer on Nb substrate

    International Nuclear Information System (INIS)

    Sugiarti, Eni; Wang, Youngmin; Hashimoto, Naoyuki; Ohnuki, Somei; Narita, Toshio

    2011-01-01

    An electron microscopy phase characterization was carried out for a Re-based diffusion barrier layer, which was deposited on the Nb substrate used as an ultra high temperature material. The coating process produced three layers; an outer Cr(Re) layer, an intermediate Cr-Nb-Re layer, and an inner Nb(Re) layer. The Cr-Nb-Re layer is considered to act as a diffusion barrier layer between the substrate and the outer Cr(Re) reservoir layer. The Cr(Re) and Nb(Re) layers are in single phase with a similar bcc structures, but they are different in structure from the intermediate layer, which is composed of a dual phase of Re 63 Cr 20 Nb 17 with a cubic structure and Nb 42 Re 33 Cr 25 with a hexagonal structure determined by transmission electron microscopy (TEM) in this study. (author)

  17. Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

    DEFF Research Database (Denmark)

    Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher

    2009-01-01

    The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which...

  18. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  19. Process and electrolyte for applying barrier layer anodic coatings

    International Nuclear Information System (INIS)

    Dosch, R.G.; Prevender, T.S.

    1975-01-01

    Various metals may be anodized, and preferably barrier anodized, by anodizing the metal in an electrolyte comprising quaternary ammonium compound having a complex metal anion in a solvent containing water and a polar, water soluble organic material. (U.S.)

  20. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

  1. Effect of W addition on the electroless deposited NiP(W) barrier layer

    International Nuclear Information System (INIS)

    Tao, Yishi; Hu, Anmin; Hang, Tao; Peng, Li; Li, Ming

    2013-01-01

    Electroless deposition of NiP, NiWP thin film on p-type Si as the barrier layer to prevent the diffusion of Cu into Si was investigated. The thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples after annealed at various temperatures. XRD was applied to detect the formation of Cu 3 Si and evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP–2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could hardly diffuse through NiWP layer at 550 °C. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP–2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.

  2. EPE analysis of sub-N10 BEoL flow with and without fully self-aligned via using Coventor SEMulator3D

    Science.gov (United States)

    Franke, Joern-Holger; Gallagher, Matt; Murdoch, Gayle; Halder, Sandip; Juncker, Aurelie; Clark, William

    2017-03-01

    During the last few decades, the semiconductor industry has been able to scale device performance up while driving costs down. What started off as simple geometrical scaling, driven mostly by advances in lithography, has recently been accompanied by advances in processing techniques and in device architectures. The trend to combine efforts using process technology and lithography is expected to intensify, as further scaling becomes ever more difficult. One promising component of future nodes are "scaling boosters", i.e. processing techniques that enable further scaling. An indispensable component in developing these ever more complex processing techniques is semiconductor process modeling software. Visualization of complex 3D structures in SEMulator3D, along with budget analysis on film thicknesses, CD and etch budgets, allow process integrators to compare flows before any physical wafers are run. Hundreds of "virtual" wafers allow comparison of different processing approaches, along with EUV or DUV patterning options for defined layers and different overlay schemes. This "virtual fabrication" technology produces massively parallel process variation studies that would be highly time-consuming or expensive in experiment. Here, we focus on one particular scaling booster, the fully self-aligned via (FSAV). We compare metal-via-metal (mevia-me) chains with self-aligned and fully-self-aligned via's using a calibrated model for imec's N7 BEoL flow. To model overall variability, 3D Monte Carlo modeling of as many variability sources as possible is critical. We use Coventor SEMulator3D to extract minimum me-me distances and contact areas and show how fully self-aligned vias allow a better me-via distance control and tighter via-me contact area variability compared with the standard self-aligned via (SAV) approach.

  3. Glomerular endothelial surface layer acts as a barrier against albumin filtration

    NARCIS (Netherlands)

    Dane, M.J.; Berg, B.M. van den; Avramut, M.C.; Faas, F.G.; Vlag, J. van der; Rops, A.L.; Ravelli, R.B.; Koster, B.J.; Zonneveld, A.J. van; Vink, H.; Rabelink, T.J.

    2013-01-01

    Glomerular endothelium is highly fenestrated, and its contribution to glomerular barrier function is the subject of debate. In recent years, a polysaccharide-rich endothelial surface layer (ESL) has been postulated to act as a filtration barrier for large molecules, such as albumin. To test this

  4. Cantilever arrays with self-aligned nanotips of uniform height

    International Nuclear Information System (INIS)

    Koelmans, W W; Peters, T; Berenschot, E; De Boer, M J; Siekman, M H; Abelmann, L

    2012-01-01

    Cantilever arrays are employed to increase the throughput of imaging and manipulation at the nanoscale. We present a fabrication process to construct cantilever arrays with nanotips that show a uniform tip–sample distance. Such uniformity is crucial, because in many applications the cantilevers do not feature individual tip–sample spacing control. Uniform cantilever arrays lead to very similar tip–sample interaction within an array, enable non-contact modes for arrays and give better control over the load force in contact modes. The developed process flow uses a single mask to define both tips and cantilevers. An additional mask is required for the back side etch. The tips are self-aligned in the convex corner at the free end of each cantilever. Although we use standard optical contact lithography, we show that the convex corner can be sharpened to a nanometre scale radius by an isotropic underetch step. The process is robust and wafer-scale. The resonance frequencies of the cantilevers within an array are shown to be highly uniform with a relative standard error of 0.26% or lower. The tip–sample distance within an array of up to ten cantilevers is measured to have a standard error around 10 nm. An imaging demonstration using the AFM shows that all cantilevers in the array have a sharp tip with a radius below 10 nm. The process flow for the cantilever arrays finds application in probe-based nanolithography, probe-based data storage, nanomanufacturing and parallel scanning probe microscopy. (paper)

  5. Recombination barrier layers in solid-state quantum dot-sensitized solar cells

    KAUST Repository

    Roelofs, Katherine E.

    2012-06-01

    By replacing the dye in the dye-sensitized solar cell design with semiconductor quantum dots as the light-absorbing material, solid-state quantum dot-sensitized solar cells (ss-QDSSCs) were fabricated. Cadmium sulfide quantum dots (QDs) were grown in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer increased open circuit voltage, causing an increase in device efficiency. For thicker Al2O3 barrier layers, photocurrent decreased substantially, leading to a decrease in device efficiency. © 2012 IEEE.

  6. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

    Science.gov (United States)

    Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

    2016-05-01

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  7. Uncertainty evaluation in the self-alignment test of the upper plate of a press

    International Nuclear Information System (INIS)

    Lourenço, Alexandre S; E Sousa, J Alves

    2015-01-01

    This paper describes a method to evaluate uncertainty of the self-alignment test of the upper plate of a press according to EN 12390-4:2000. The method, the algorithms and the sources of uncertainty are described

  8. Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

    DEFF Research Database (Denmark)

    Zhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.

    2012-01-01

    We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference...

  9. Specific features of waveguide recombination in laser structures with asymmetric barrier layers

    Energy Technology Data Exchange (ETDEWEB)

    Polubavkina, Yu. S., E-mail: polubavkina@mail.ru; Zubov, F. I.; Moiseev, E. I.; Kryzhanovskaya, N. V.; Maximov, M. V. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation); Semenova, E. S.; Yvind, K. [Technical University of Denmark, DTU Fotonik (Denmark); Asryan, L. V. [Virginia Polytechnic Institute and State University (United States); Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)

    2017-02-15

    The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm{sup 2}) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.

  10. Specific features of waveguide recombination in laser structures with asymmetric barrier layers

    DEFF Research Database (Denmark)

    Polubavkina, Yu; Zubov, F. I.; Moiseev, E.

    2017-01-01

    microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding......The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical...... layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport....

  11. A high performance ceria based interdiffusion barrier layer prepared by spin-coating

    DEFF Research Database (Denmark)

    Plonczak, Pawel; Joost, Mario; Hjelm, Johan

    2011-01-01

    A multiple spin-coating deposition procedure of Ce0.9Gd0.1O1.95 (CGO) for application in solid oxide fuel cells (SOFCs) was developed. The thin and dense CGO layer can be employed as a barrier layer between yttria stabilised zirconia (YSZ) electrolyte and a (La, Sr)(Co, Fe)O3 based cathode....... The decomposition of the polymer precursor used in the spin-coating process was studied. The depositions were performed on anode supported half cells. By controlling the sintering temperature between each spin-coating process, dense and crack-free CGO films with a thickness of approximately 1 μm were obtained....... The successive steps of dense layer production was investigated by scanning electron microscopy. X-ray diffraction was employed to monitor the crystal structure of the CGO layer sintered at different temperatures. The described spin coated barrier layer was evaluated using an anode supported cell...

  12. Recent Advances in Gas Barrier Thin Films via Layer-by-Layer Assembly of Polymers and Platelets.

    Science.gov (United States)

    Priolo, Morgan A; Holder, Kevin M; Guin, Tyler; Grunlan, Jaime C

    2015-05-01

    Layer-by-layer (LbL) assembly has emerged as the leading non-vacuum technology for the fabrication of transparent, super gas barrier films. The super gas barrier performance of LbL deposited films has been demonstrated in numerous studies, with a variety of polyelectrolytes, to rival that of metal and metal oxide-based barrier films. This Feature Article is a mini-review of LbL-based multilayer thin films with a 'nanobrick wall' microstructure comprising polymeric mortar and nano-platelet bricks that impart high gas barrier to otherwise permeable polymer substrates. These transparent, water-based thin films exhibit oxygen transmission rates below 5 × 10(-3) cm(3) m(-2) day(-1) atm(-1) and lower permeability than any other barrier material reported. In an effort to put this technology in the proper context, incumbent technologies such as metallized plastics, metal oxides, and flake-filled polymers are briefly reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Development of a Self Aligned CMOS Process for Flash Lamp Annealed Polycrystalline Silicon TFTs

    Science.gov (United States)

    Bischoff, Paul

    The emerging active matrix liquid crystal (AMLCD) display market requires a high performing semiconductor material to meet rising standards of operation. Currently amorphous silicon (a-Si) dominates the market but it does not have the required mobility for it to be used in AMLCD manufacturing. Other materials have been developed including crystallizing a-Si into poly-silicon. A new approach to crystallization through the use of flash lamp annealing (FLA) decreases manufacturing time and greatly improves carrier mobility. Previous work on FLA silicon for the use in CMOS transistors revealed significant lateral dopant diffusion into the channel greatly increasing the minimum channel length required for a working device. This was further confounded by the gate overlap due to misalignment during lithography patterning steps. Through the use of furnace dopant activation instead of FLA dopant activation and a self aligned gate the minimum size transistor can be greatly reduced. A new lithography mask and process flow were developed for the furnace annealing and self aligned gate. Fabrication of the self aligned devices resulted in oxidation of the Molybdenum self aligned gate. Further development is needed to successfully manufacture these devices. Non-self aligned transistors were made simultaneously with self aligned devices and used the furnace activation. These devices showed an increase in sheet resistance from 250 O to 800 O and lower mobility from 380 to 40.2 V/cm2s. The lower mobility can be contributed to an increase in implanted trap density indicating furnace annealing is an inferior activation method over FLA. The minimum transistor size however was reduced from 20 to 5 mum. With improvements in the self aligned process high performing small devices can be manufactured.

  14. Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

    International Nuclear Information System (INIS)

    Kaeaeriaeinen, Tommi O.; Maydannik, Philipp; Cameron, David C.; Lahtinen, Kimmo; Johansson, Petri; Kuusipalo, Jurkka

    2011-01-01

    One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O 2 TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O 2 TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.

  15. Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, Tommi O., E-mail: tommi.kaariainen@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Cameron, David C., E-mail: david.cameron@lut.f [ASTRaL, Lappeenranta University of Technology, Prikaatinkatu 3 E, 50100 Mikkeli (Finland); Lahtinen, Kimmo, E-mail: kimmo.lahtinen@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Johansson, Petri, E-mail: petri.johansson@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.f [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 541, 33101 Tampere (Finland)

    2011-03-01

    One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O{sub 2}TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O{sub 2}TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.

  16. Self-aligned mask renewal for anisotropically etched circular micro- and nanostructures

    International Nuclear Information System (INIS)

    Kaspar, Peter; Jäckel, Heinz; Holzapfel, Sebastian; Windhab, Erich J

    2011-01-01

    The top–down fabrication of high aspect ratio circular micro- and nanostructures in silicon nitride is presented. A new method is introduced to increase the aspect ratio of anisotropically etched holes by a factor of more than two with respect to the results obtained from an established dry-etching process. The method is based on the renewal of an etching mask after a first etching step has been completed. Mask renewal is done by line-of-sight deposition of a masking layer on the surface of the sample, which is mounted at an angle with respect to the deposition direction. No additional alignment step is required. The proof of principle is performed for silicon nitride etching through a mask of titanium, but the method has great potential to be applicable to a wide variety of substrate–mask combinations and to find entrance into various engineering fields. Two specific applications are highlighted. Firstly, a thick silicon nitride hardmask is used for the fabrication of deeply etched photonic crystal holes in indium phosphide (InP). For holes of 280 nm diameter, a record aspect ratio of 20 and an overall selectivity of 28.5 between a positive-tone resist layer and InP are reported. Secondly, the use of perforated silicon nitride membranes for droplet formation for applications in food engineering or pharmaceutics is addressed. Preliminary results show a potential for the self-aligned mask renewal method to exceed state-of-the-art membrane quality in terms of pore size, aspect ratio and membrane stability.

  17. Comparison of some coating techniques to fabricate barrier layers on packaging materials

    Energy Technology Data Exchange (ETDEWEB)

    Hirvikorpi, Terhi, E-mail: terhi.hirvikorpi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Vaehae-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Harlin, Ali, E-mail: ali.harlin@vtt.f [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Karppinen, Maarit, E-mail: maarit.karppinen@tkk.f [Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University School of Science and Technology, Kemistintie 1, P.O. Box 16100, FI-00076 AALTO (Finland)

    2010-07-30

    Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.

  18. Comparison of some coating techniques to fabricate barrier layers on packaging materials

    International Nuclear Information System (INIS)

    Hirvikorpi, Terhi; Vaehae-Nissi, Mika; Harlin, Ali; Karppinen, Maarit

    2010-01-01

    Atomic layer deposition (ALD), electron beam evaporation, magnetron sputtering and a sol-gel method were used to deposit thin aluminum oxide coatings onto two different fiber-based packaging materials of commercial board grades coated with synthetic and biodegradable polymers. Significant decreases in both the water vapor and oxygen permeation rates were observed. With each technique the barrier performance was improved. However, among the techniques tested ALD was found to be most suitable. Our results moreover revealed that biodegradable polylactic acid-coated paperboard with a 25-nm thick layer of aluminum oxide grown by ALD on top of it showed promising barrier characteristics against water vapor and oxygen.

  19. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

    International Nuclear Information System (INIS)

    Zhou, Y.M.; He, M.Z.; Xie, Z.

    2014-01-01

    Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si

  20. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  1. Thermal shock behavior of toughened gadolinium zirconate/YSZ double-ceramic-layered thermal barrier coating

    International Nuclear Information System (INIS)

    Zhong, Xinghua; Zhao, Huayu; Zhou, Xiaming; Liu, Chenguang; Wang, Liang; Shao, Fang; Yang, Kai; Tao, Shunyan; Ding, Chuanxian

    2014-01-01

    Highlights: • Gd 2 Zr 2 O 7 /YSZ DCL thermal barrier coating was designed and fabricated. • The Gd 2 Zr 2 O 7 top ceramic layer was toughened by addition of nanostructured 3YSZ. • Remarkable improvement in thermal shock resistance of the DCL coating was achieved. - Abstract: Double-ceramic-layered (DCL) thermal barrier coating system comprising of toughened Gadolinium zirconate (Gd 2 Zr 2 O 7 , GZ) as the top ceramic layer and 4.5 mol% Y 2 O 3 partially-stabilized ZrO 2 (4.5YSZ) as the bottom ceramic layer was fabricated by plasma spraying and thermal shock behavior of the DCL coating was investigated. The GZ top ceramic layer was toughened by addition of nanostructured 3 mol% Y 2 O 3 partially-stabilized ZrO 2 (3YSZ) to improve fracture toughness of the matrix. The thermal shock resistance of the DCL coating was enhanced significantly compared to that of single-ceramic-layered (SCL) GZ-3YSZ composite coating, which is believed to be primarily attributed to the two factors: (i) the increase in fracture toughness of the top ceramic layer by incorporating nanostructured YSZ particles and (ii) the improvement in strain tolerance through the utilization of 4.5YSZ as the bottom ceramic layer. In addition, the failure mechanisms are mainly attributed to the still low fracture toughness of the top ceramic layer and oxidation of the bond-coat

  2. Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

    International Nuclear Information System (INIS)

    Ooike, N.; Motohisa, J.; Fukui, T.

    2004-01-01

    We propose and demonstrate a novel self-aligning process for fabricating the tungsten (W) gate electrode of GaAs nanowire FETs by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) where SiO 2 /W composite films are used to mask the substrates. First, to study the growth process and its dependence on mask materials, GaAs wire structures were grown on masked substrates partially covered with a single W layer or SiO 2 /W composite films. We found that lateral growth over the masked regions could be suppressed when a wire along the [110] direction and a SiO 2 /W composite mask were used. Using this composite mask, we fabricated GaAs narrow channel FETs using W as a Schottky gate electrode, and we were able to observe FET characteristics at room temperature

  3. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

    2015-01-01

    Current-voltage and light-current characteristics of quantum-well lasers have been studied at high drive currents. The introduction of asymmetric barrier layers adjacent to the active region caused a significant suppression of the nonlinearity in the light-current characteristic and an increase...

  4. Observed seasonal variability of barrier layer in the Bay of Bengal

    Digital Repository Service at National Institute of Oceanography (India)

    Pankajakshan, T.; Muraleedharan, P.M.; Rao, R.R.; Somayajulu, Y.K.; Reddy, G.V.; Revichandran, C.

    The observed formation of Barrier Layer (BL) and the seasonal variability of BL thickness (BLT) in the Bay of Bengal are examined utilizing the most comprehensive data set. Thick BL (~50m) first appears in the coastal region of the northeastern bay...

  5. Modelling of migration from multi-layers and functional barriers: Estimation of parameters

    NARCIS (Netherlands)

    Dole, P.; Voulzatis, Y.; Vitrac, O.; Reynier, A.; Hankemeier, T.; Aucejo, S.; Feigenbaum, A.

    2006-01-01

    Functional barriers form parts of multi-layer packaging materials, which are deemed to protect the food from migration of a broad range of contaminants, e.g. those associated with reused packaging. Often, neither the presence nor the identity of the contaminants is known, so that safety assessment

  6. Planar self-aligned ion implanted InP MISFETS for fast logic applications

    International Nuclear Information System (INIS)

    Cameron, D.C.; Irving, L.D.; Whitehouse, C.R.; Woodward, J.; Lee, D.

    1983-01-01

    The first successful use of ion implantation to fabricate truly self-aligned planar n-channel enhancement-mode indium phosphide MISFITS is reported. The transistors have been fabricated on iron-doped semi-insulating material using PECVD-deposited SiO 2 as the gate dielectric and molybdenum gate electrodes. The self-aligned source and drain contact regions were produced by Si 29 ion implantation using each gate stripe as an implant mask. The devices fabricated to date have exhibited channel mobilities up to value of 2400 cm 2 v -1 s -1 , with excellent uniformity and stability of the device characteristics also being observed. (author)

  7. Capillary self-alignment of mesoscopic foil components for sensor-systems-in-foil

    International Nuclear Information System (INIS)

    Arutinov, Gari; Smits, Edsger C P; Van Heck, Gert; Van den Brand, Jeroen; Schoo, Herman F M; Mastrangeli, Massimo; Dietzel, Andreas

    2012-01-01

    This paper reports on the effective use of capillary self-alignment for low-cost and time-efficient assembly of heterogeneous foil components into a smart electronic identification label. Particularly, we demonstrate the accurate (better than 50 µm) alignment of cm-sized functional foil dies. We investigated the role played by the assembly liquid, by the size and the weight of assembling dies and by their initial offsets in the self-alignment performance. It was shown that there is a definite range of initial offsets allowing dies to align with high accuracy and within approximately the same time window, irrespective of their initial offset. (paper)

  8. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  9. Micro-fabricated Liquid Encapsulated Energy Harvester with Polymer Barrier Layer as Liquid Electret Interface

    International Nuclear Information System (INIS)

    Bu, L; Xu, H Y; Xu, B J; Song, L

    2014-01-01

    This paper addresses the electret discharge issue for liquid based electret energy harvesters. An interface structure of PDMS/PTFE polymer barrier layer between liquid and electrets is introduced, achieving 75% charge retain rate over 100h, compared with 0% without the proposed layer over 100h. Further, the PDMS/PTFE layer is introduced into liquid encapsulated energy harvester (LEEH) and is compatible with micro-fabrication process. The retain rate of device voltage is about 47%∼65% over 100h. At 100h after corona charging, the device generates maximally 3.7V, 0.55μW @1Hz rotation

  10. Development of Barrier Layers for the Protection of Candidate Alloys in the VHTR

    Energy Technology Data Exchange (ETDEWEB)

    Levi, Carlos G. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Jones, J. Wayne [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Pollock, Tresa M. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States); Was, Gary S. [Battelle Energy Alliance, LLC, Idaho Falls, ID (United States)

    2015-01-22

    The objective of this project was to develop concepts for barrier layers that enable leading candi- date Ni alloys to meet the longer term operating temperature and durability requirements of the VHTR. The concepts were based on alpha alumina as a primary surface barrier, underlay by one or more chemically distinct alloy layers that would promote and sustain the formation of the pro- tective scale. The surface layers must possess stable microstructures that provide resistance to oxidation, de-carburization and/or carburization, as well as durability against relevant forms of thermo-mechanical cycling. The system must also have a self-healing ability to allow endurance for long exposure times at temperatures up to 1000°C.

  11. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

    2015-01-01

    This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity. PMID:28788026

  12. Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

    2015-04-13

    This study proposes a two-photomask process for fabricating amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO₂ combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO₂ deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

  13. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2015-04-01

    Full Text Available This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO thin-film transistors (TFTs that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

  14. A Kalman Filter for SINS Self-Alignment Based on Vector Observation.

    Science.gov (United States)

    Xu, Xiang; Xu, Xiaosu; Zhang, Tao; Li, Yao; Tong, Jinwu

    2017-01-29

    In this paper, a self-alignment method for strapdown inertial navigation systems based on the q -method is studied. In addition, an improved method based on integrating gravitational apparent motion to form apparent velocity is designed, which can reduce the random noises of the observation vectors. For further analysis, a novel self-alignment method using a Kalman filter based on adaptive filter technology is proposed, which transforms the self-alignment procedure into an attitude estimation using the observation vectors. In the proposed method, a linear psuedo-measurement equation is adopted by employing the transfer method between the quaternion and the observation vectors. Analysis and simulation indicate that the accuracy of the self-alignment is improved. Meanwhile, to improve the convergence rate of the proposed method, a new method based on parameter recognition and a reconstruction algorithm for apparent gravitation is devised, which can reduce the influence of the random noises of the observation vectors. Simulations and turntable tests are carried out, and the results indicate that the proposed method can acquire sound alignment results with lower standard variances, and can obtain higher alignment accuracy and a faster convergence rate.

  15. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States); Crowell, Paul A. [School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States)

    2015-03-09

    Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

  16. Few-layer MoS2 as nitrogen protective barrier

    Science.gov (United States)

    Akbali, B.; Yanilmaz, A.; Tomak, A.; Tongay, S.; Çelebi, C.; Sahin, H.

    2017-10-01

    We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.

  17. Laser micro-machining of hydrophobic-hydrophilic patterns for fluid driven self-alignment in micro-assembly

    NARCIS (Netherlands)

    Römer, Gerardus Richardus, Bernardus, Engelina; Jorritsma, Mark; Arnaldo del Cerro, D.; Chang, Bo; Liimatainen, Ville; Zhou, Quan; Huis in 't Veld, Bert

    2011-01-01

    Fluid driven self-alignment is a low cost alternative to fast but relatively inaccurate robotic pickand-place assembly of micro-fabricated components. This fluidic self-alignment technique relies on a hydrophobic-hydrophilic pattern on the surface of the receiving substrate, which confines a fluid

  18. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuechun [School of Materials Science and Engineering, Yunnan University, Kunming (China); Chen, Xiuhua, E-mail: chenxh@ynu.edu.cn [School of Materials Science and Engineering, Yunnan University, Kunming (China); Ma, Wenhui [National Engineering Laboratory of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming (China); Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei [School of Materials Science and Engineering, Yunnan University, Kunming (China)

    2017-02-28

    Highlights: • In this paper, the electroless deposited NiCrB thin film was mainly in the form of NiB, CrB{sub 2} compounds and elementary Ni. • The sheet resistance of NiCrB thin film was 3.043 Ω/□, it is smaller than that of the widely used Ta, TaN and TiN diffusion barrier layers. • Annealing experiments showed that the failure temperature of NiCrB thin film regarding Cu diffusion was 900 °C. • NiCrB barrier layer crystallized after 900 °C annealing, Cu grains arrived at Si-substrate through grain boundaries, resulting in the formation of Cu{sub 3}Si. • Eelectroless deposited NiCrB film also had good oxidation resistance, it is expected to become an anti-oxidant layer of copper interconnection. - Abstract: NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO{sub 2}/Si and NiCrB/Cu/NiCrB/SiO{sub 2}/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu{sub 3}Si.

  19. Structural properties of ultraviolet cured polysilazane gas barrier layers on polymer substrates

    International Nuclear Information System (INIS)

    Morlier, Arnaud; Cros, Stéphane; Garandet, Jean-Paul; Alberola, Nicole

    2014-01-01

    Perhydropolysilazane (PHPS) conversion to silica through high energy ultraviolet irradiation has been studied. Precursor conversion speed and structural properties of the UV cured PHPS have been investigated and showed that this conversion method is fast but that complete conversion into silica is not achieved in an oxygen depleted atmosphere for layer thicknesses higher than 30 nm, resulting in a composite structure with concentration gradients. We further show that Fourier transform infrared spectroscopy data allow investigating the local structure and composition over the depth of the obtained layers. Gas permeability of the thin UV cured PHPS layers deposited on polymers has been studied. We used a high sensitivity permeation measurement technique to determine water vapor and oxygen permeabilities of the barrier layers and show the correlation between helium, oxygen and water permeability of these materials. Oxygen and water vapor transmission rates of respectively 0.06 cm 3 /m 2 /day/bar and 0.2 g/m 2 /day have been obtained with layers deposited on a polymer substrate. - Highlights: • Perhydropolysilazane has been converted into dense layers by vacuum UV irradiation. • Cured perhydropolysilazane layers have an inhomogeneous structure. • The cured material consists in 3 spontaneously formed layers. • Oxygen and water transmission rates of 0.06 cm 3 /m 2 /day/bar and 0.02 g/m 2 /day are reached

  20. Functional Two-Dimensional Coordination Polymeric Layer as a Charge Barrier in Li–S Batteries

    KAUST Repository

    Huang, Jing-Kai

    2018-01-04

    Ultrathin two-dimensional (2D) polymeric layers are capable of separating gases and molecules based on the reported size exclusion mechanism. What is equally important but missing today is an exploration of the 2D layers with charge functionality, which enables applications using the charge exclusion principle. This work demonstrates a simple and scalable method of synthesizing a free-standing 2D coordination polymer Zn2(benzimidazolate)2(OH)2 at the air–water interface. The hydroxyl (−OH) groups are stoichiometrically coordinated and implement electrostatic charges in the 2D structures, providing powerful functionality as a charge barrier. Electrochemical performance of the Li–S battery shows that the Zn2(benzimidazolate)2(OH)2 coordination polymer layers efficiently mitigate the polysulfide shuttling effects and largely enhance the battery capacity and cycle performance. The synthesis of the proposed coordination polymeric layers is simple, scalable, cost saving, and promising for practical use in batteries.

  1. Developing Cost-Effective Dense Continuous SDC Barrier Layers for SOFCs

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Hoang Viet P.; Hardy, John S.; Coyle, Christopher A.; LU, Zigui; Stevenson, Jeffry W.

    2017-12-04

    Significantly improved performance during electrochemical testing of a cell with a dense continuous pulsed laser deposited (PLD) samarium doped ceria (SDC) layer spurred investigations into the fabrication of dense continuous SDC barrier layers by means of cost-effective deposition using screen printing which is amenable to industrial production of SOFCs. Many approaches to improve the SDC density have been explored including the use of powder with reduced particle sizes, inks with increased solids loading, and doping with sintering aids (1). In terms of sintering aids, dopants like Mo or binary systems of Mo+Cu or Fe+Co greatly enhance SDC sinterability. In fact, adding dopants to a screen printed, prefired, porous SDC layer made it possible to achieve a dense continuous barrier layer atop the YSZ electrolyte without sintering above 1200°C. Although the objective of fabricating a dense continuous layer was achieved, additional studies have been initiated to improve the cell performance. Underlying issues with constrained sintering and dopant-enhanced ceria-zirconia solid solubility are also addressed in this paper.

  2. Suitability of polystyrene as a functional barrier layer in coloured food contact materials.

    Science.gov (United States)

    Genualdi, Susan; Addo Ntim, Susana; Begley, Timothy

    2015-01-01

    Functional barriers in food contact materials (FCMs) are used to prevent or reduce migration from inner layers in multilayer structures to food. The effectiveness of functional barrier layers was investigated in coloured polystyrene (PS) bowls due to their intended condition of use with hot liquids such as soups or stew. Migration experiments were performed over a 10-day period using USFDA-recommended food simulants (10% ethanol, 50% ethanol, corn oil and Miglyol) along with several other food oils. At the end of the 10 days, solvent dyes had migrated from the PS bowls at 12, 1 and 31,000 ng cm(-)(2) into coconut oil, palm kernel oil and Miglyol respectively, and in coconut oil and Miglyol the colour change was visible to the human eye. Scanning electron microscope (SEM) images revealed that the functional barrier was no longer intact for the bowls exposed to coconut oil, palm kernel oil, Miglyol, 10% ethanol, 50% ethanol and goat's milk. Additional tests showed that 1-dodecanol, a lauryl alcohol derived from palm kernel oil and coconut oil, was present in the PS bowls at an average concentration of 11 mg kg(-1). This compound is likely to have been used as a dispersing agent for the solvent dye and aided the migration of the solvent dye from the PS bowl into the food simulant. The solvent dye was not found in the 10% ethanol, 50% ethanol and goat's milk food simulants above their respective limits of detection, which is likely to be due to its insolubility in aqueous solutions. A disrupted barrier layer is of concern because if there are unregulated materials in the inner layers of the laminate, they may migrate to food, and therefore be considered unapproved food additives resulting in the food being deemed adulterated under the Federal Food Drug and Cosmetic Act.

  3. Spray pyrolysis of doped-ceria barrier layers for solid oxide fuel cells

    DEFF Research Database (Denmark)

    Szymczewska, Dagmara; Chrzan, Aleksander; Karczewski, Jakub

    2017-01-01

    Gadolinium doped ceria (Ce0.8Gd0.2O2 − x-CGO) layer fabricated by spray pyrolysis is investigated as the diffusion barrier for solid oxide fuel cell. It is deposited between the La0.6Sr0.4FeO3 − δ cathode and the yttria stabilized zirconia electrolyte to mitigate harmful interdiffusion...

  4. Computational investigation of the effects of barrier layers on the permeation of hydrogen through metals

    International Nuclear Information System (INIS)

    Perkins, W.G.

    1975-01-01

    Results of a computational investigation of the permeation behavior of oxide-coated metal membranes are presented. A steady-state permeation model was developed which promises to be useful in evaluation of oxide layers on metals as hydrogen permeation barriers. The pressure and thickness dependence of steady state permeation through oxide-coated metal membranes is described using plots of logarithmic functions. (U.S.)

  5. Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Mardani, Shabnam, E-mail: shabnam.mardani@angstrom.uu.se; Vallin, Örjan; Wätjen, Jörn Timo; Norström, Hans; Olsson, Jörgen; Zhang, Shi-Li, E-mail: shili.zhang@angstrom.uu.se [Solid State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 (Sweden)

    2014-08-18

    Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased device performance in many fields of applications, such as high-temperature electronics. However, there are still issues regarding the stability and reliability of WBG devices. Of particular importance is the high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation can occur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this study is found to be electrically and morphologically stabilize the Ag metallization up to 800 °C, compared to 600 °C for uncapped films. However, the barrier layer plays a key role and TaN is found to be superior to Ta, resulting in the best achieved stability, whereas the difference between Ta and TaN caps is negligible. The β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause responsible for the morphological instability observed above 600 °C. It is shown that this phase transition can be avoided using a stacked Ta/TaN barrier.

  6. Ink-jet printing technology enables self-aligned mould patterning for electroplating in a single step

    International Nuclear Information System (INIS)

    Meissner, M V; Spengler, N; Mager, D; Wang, N; Kiss, S Z; Höfflin, J; While, P T; Korvink, J G

    2015-01-01

    We present a new self-aligned, mask-free micro-fabrication method with which to form thick-layered conductive metal micro-structures inside electroplating moulds. Seed layer patterning for electroplating was performed by ink-jet printing using a silver nano-particle ink deposited on SU-8 or Ordyl SY permanent resist. The silver ink contact angle on SU-8 was adjusted by oxygen plasma followed by a hard bake. Besides functioning as a seed layer, the printed structures further served as a shadow mask during patterning of electroplating moulds into negative photoresist. The printed silver tracks remained in strong adhesion to the substrate when exposed to the acidic chemistry of the electroplating bath. To demonstrate the process, we manufactured rectangular, low-resistivity planar micro-coils for use in magnetic resonance microscopy. MRI images of a spring onion with an in-plane resolution down to 10 µm × 10 µm were acquired using a micro-coil on an 11.7 T MRI scanner. (paper)

  7. Self-aligned blocking integration demonstration for critical sub-30nm pitch Mx level patterning with EUV self-aligned double patterning

    Science.gov (United States)

    Raley, Angélique; Lee, Joe; Smith, Jeffrey T.; Sun, Xinghua; Farrell, Richard A.; Shearer, Jeffrey; Xu, Yongan; Ko, Akiteru; Metz, Andrew W.; Biolsi, Peter; Devilliers, Anton; Arnold, John; Felix, Nelson

    2018-04-01

    We report a sub-30nm pitch self-aligned double patterning (SADP) integration scheme with EUV lithography coupled with self-aligned block technology (SAB) targeting the back end of line (BEOL) metal line patterning applications for logic nodes beyond 5nm. The integration demonstration is a validation of the scalability of a previously reported flow, which used 193nm immersion SADP targeting a 40nm pitch with the same material sets (Si3N4 mandrel, SiO2 spacer, Spin on carbon, spin on glass). The multi-color integration approach is successfully demonstrated and provides a valuable method to address overlay concerns and more generally edge placement error (EPE) as a whole for advanced process nodes. Unbiased LER/LWR analysis comparison between EUV SADP and 193nm immersion SADP shows that both integrations follow the same trend throughout the process steps. While EUV SADP shows increased LER after mandrel pull, metal hardmask open and dielectric etch compared to 193nm immersion SADP, the final process performance is matched in terms of LWR (1.08nm 3 sigma unbiased) and is only 6% higher than 193nm immersion SADP for average unbiased LER. Using EUV SADP enables almost doubling the line density while keeping most of the remaining processes and films unchanged, and provides a compelling alternative to other multipatterning integrations, which present their own sets of challenges.

  8. Effects of a Chitosan Coating Layer on the Surface Properties and Barrier Properties of Kraft Paper

    Directory of Open Access Journals (Sweden)

    Shanhui Wang

    2016-01-01

    Full Text Available Biodegradable chitosan can be applied as a coating on the surface of kraft paper in order to improve its barrier properties against water vapor and air. The food packaging industry can benefit from the addition of chitosan to its current packaging, and in turn reduce pollution from plastic packaging plants. This paper discusses the film formation of chitosan, the permeability of paper coated with a chitosan layer, and the influence on the paper’s surface and barrier properties under different process conditions. SEM (scanning electron microscope, AFM (atomic force microscope, ATR-FTIR (Fourier transmission infrared spectroscope with attenuated total reflection, and PDA (penetration dynamics analysis were used to analyze the properties of chitosan’s film formation and permeability. A controlled experiment showed that the chitosan layer was smoother than the surface of the uncoated kraft paper, had better film formation, and that there was no chitosan penetration through the kraft paper. The barrier properties against water vapor were strongest when there was a higher concentration of chitosan solution at the optimum pH, stirring speed, and those with a thicker coating on the kraft paper.

  9. Self-aligned inkjet printing of highly conducting gold electrodes with submicron resolution

    Science.gov (United States)

    Zhao, Ni; Chiesa, Marco; Sirringhaus, Henning; Li, Yuning; Wu, Yiliang; Ong, Beng

    2007-03-01

    Self-aligned printing is a recently developed bottom-up printing technique which utilizes the unique droplet motion on heterogeneous surfaces to define sub-100-nm critical features and surpasses the resolution which can commonly be achieved by direct printing by two orders of magnitude. Here we extend this method, which was originally implemented with conductive polymer inks, to fabrication of functional conductive nanostructures with gold nanoparticle ink. We also designed a configuration where the ink was printed between two lithographically defined patterns to facilitate the study of the channel formation. Channel lengths from 4μm down to 60nm were achieved by controlling the surface tension and drying time of the ink. A fluid dynamical model is presented to explain the mechanism by which the channel forms in the self-aligned printing technique. Field-effect transistors fabricated using gold self-aligned printed source-drain electrodes exhibit significantly improved output currents than those using conducting polymers. Unambiguous evidence for the submicrometer channel dimension is obtained by imaging the potential drop along the channel using scanning Kelvin probe microscopy.

  10. Self-aligned photolithography for the fabrication of fully transparent high-voltage devices

    Science.gov (United States)

    Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing; Wang, Tao; Liang, Huili; Du, Xiaolong

    2018-05-01

    High-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. However, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. To resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. High-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. Unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. The photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. The substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. The electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. The presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.

  11. Scalable fabrication of self-aligned graphene transistors and circuits on glass.

    Science.gov (United States)

    Liao, Lei; Bai, Jingwei; Cheng, Rui; Zhou, Hailong; Liu, Lixin; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

    2012-06-13

    Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

  12. Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

    International Nuclear Information System (INIS)

    Lee, Jung-Min; Choi, Byung-Hyun; Ji, Mi-Jung; An, Yong-Tae; Park, Jung-Ho; Kwon, Jae-Hong; Ju, Byeong-Kwon

    2009-01-01

    In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In 2 O 3 :SnO 2 , 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO 2 or Al 2 O 3 between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al 2 O 3 barrier layer, show better properties than those deposited on the SiO 2 barrier layer.

  13. Effect of barrier layers in burnthrough experiments with 351-nm laser illumination

    International Nuclear Information System (INIS)

    Delettrez, J.; Bradley, D.K.; Jaanimagi, P.A.; Verdon, C.P.

    1990-01-01

    The time-resolved x-ray emission is measured from spherical targets consisting of glass shells overcoated with plastic in which thin signature layers are embedded. These targets are illuminated at 351 nm by the 24-beam OMEGA laser system at the Laboratory for Laser Energetics of the University of Rochester. We measure a large burnthrough rate for bare plastic targets that can only be replicated in one-dimensional hydrodynamic simulations with laser intensities in excess of ten times the nominal intensity. We observe that the burnthrough times are affected by the presence of a thin outer coating (barrier layer). The burnthrough times depend strongly on the barrier-layer material and thickness, whereas one-dimensional simulation results predict only a small effect. Several processes are considered to explain these results: illumination nonuniformity, early shinethrough of the laser light through the plastic, prepulses, filamentation, self-focusing of hot spots, and the Rayleigh-Taylor instability. We conclude that mixing due to the Rayleigh-Taylor instability, enhanced by early shinethrough, is the most probable cause of the observed large burnthrough rates

  14. Waves propagating over a two-layer porous barrier on a seabed

    Science.gov (United States)

    Lin, Qiang; Meng, Qing-rui; Lu, Dong-qiang

    2018-05-01

    A research of wave propagation over a two-layer porous barrier, each layer of which is with different values of porosity and friction, is conducted with a theoretical model in the frame of linear potential flow theory. The model is more appropriate when the seabed consists of two different properties, such as rocks and breakwaters. It is assumed that the fluid is inviscid and incompressible and the motion is irrotational. The wave numbers in the porous region are complex ones, which are related to the decaying and propagating behaviors of wave modes. With the aid of the eigenfunction expansions, a new inner product of the eigenfunctions in the two-layer porous region is proposed to simplify the calculation. The eigenfunctions, under this new definition, possess the orthogonality from which the expansion coefficients can be easily deduced. Selecting the optimum truncation of the series, we derive a closed system of simultaneous linear equations for the same number of the unknown reflection and transmission coefficients. The effects of several physical parameters, including the porosity, friction, width, and depth of the porous barrier, on the dispersion relation, reflection and transmission coefficients are discussed in detail through the graphical representations of the solutions. It is concluded that these parameters have certain impacts on the reflection and transmission energy.

  15. Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

    Science.gov (United States)

    Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

    2018-04-01

    The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.

  16. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  17. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  18. Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

    2007-01-01

    In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...... for thick film PZT sintered at 850degC. E-beam evaporated Al and Pt is patterned on PZT with a lift-off process with a line width down to 3 mum. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode....

  19. Self-alignment of RFID dies on four-pad patterns with water droplet for sparse self-assembly

    International Nuclear Information System (INIS)

    Chang, Bo; Routa, Iiris; Sariola, Veikko; Zhou, Quan

    2011-01-01

    This paper reports an in-depth study of a water-droplet-assisted self-alignment technique that self-aligns radio frequency identification (RFID) dies on four-pad patterns. The segmented structure of four hydrophilic pads on a hydrophobic substrate brings freedom to the design of the electrical functionality and the surface functionality. The paper investigates the influence of the key parameters that may affect the self-alignment in theory and experiment. The theoretical model justifies that RFID dies can be reliably aligned on the segmented four-pad pattern even when the initial placement error is as large as 50% of the size of the die and the gap between the four pads is about 10% of the size of the die. A method has been introduced to estimate the sufficient droplet volume for self-alignment. A series of experiments have been carried out to verify the results of the model. The experiments indicate that the self-alignment between the 730 × 730 µm RFID dies and the pattern occurs reliably when the releasing bias between the RFID die and antenna is less than 400 µm for patterns with 50 and 100 µm gaps, and successful self-alignment is possible even with greater bias of 500 µm

  20. Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate

    Directory of Open Access Journals (Sweden)

    Mérel Philippe

    2010-01-01

    Full Text Available Abstract Dense, vertically aligned multiwall carbon nanotubes were synthesized on TiN electrode layers for infrared sensing applications. Microwave plasma-enhanced chemical vapor deposition and Ni catalyst were used for the nanotubes synthesis. The resultant nanotubes were characterized by SEM, AFM, and TEM. Since the length of the nanotubes influences sensor characteristics, we study in details the effects of changing Ni and TiN thickness on the physical properties of the nanotubes. In this paper, we report the observation of a threshold Ni thickness of about 4 nm, when the average CNT growth rate switches from an increasing to a decreasing function of increasing Ni thickness, for a process temperature of 700°C. This behavior is likely related to a transition in the growth mode from a predominantly “base growth” to that of a “tip growth.” For Ni layer greater than 9 nm the growth rate, as well as the CNT diameter, variations become insignificant. We have also observed that a TiN barrier layer appears to favor the growth of thinner CNTs compared to a SiO2 layer.

  1. Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

    International Nuclear Information System (INIS)

    Pershyn, Y.P.; Zubarev, E.N.; Kondratenko, V.V.; Sevryukova, V.A.; Kurbatova, S.V.

    2011-01-01

    Processes undergoing in Sc/Si multilayer X-ray mirrors (MXMs) with periods of ∝27 nm and barrier layers of CrB 2 0.3- and 0.7-nm thick within the temperature range of 420-780 K were studied by methods of small-angle X-ray reflectivity (λ=0.154 nm) and cross-sectional transmission electron microscopy. All layers with the exception of Sc ones are amorphous. Barrier layers are stable at least up to a temperature of 625 K and double the activation energy of diffusional intermixing at moderate temperatures. Introduction of barriers improves the thermal stability of Sc/Si MXMs at least by 80 degrees. Diffusion of Si atoms through barrier layers into Sc layers with formation of silicides was shown to be the main degradation mechanism of MXMs. A comparison of the stability for Sc/Si MXMs with different barriers published in the literature is conducted. The ways of further improvement of barrier properties are discussed. (orig.)

  2. Positron annihilation lifetime spectroscopy (PALS) application in metal barrier layer integrity for porous low- k materials

    CERN Document Server

    Simon, Lin; Gidley, D W; Wetzel, J T; Monnig, K A; Ryan, E T; Simon, Jang; Douglas, Yu; Liang, M S; En, W G; Jones, E C; Sturm, J C; Chan, M J; Tiwari, S C; Hirose, M

    2002-01-01

    Positron Annihilation Lifetime Spectroscopy (PALS) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >=200 AA) and large scale meso-porous low-k (>50~200 AA) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25 mu mL/0.3 mu mS structures when using SEMATECH in-house PVD Ta 250 AA as barrier layer. For small scale meso-porous (>20~50 AA) and micro- porous (<=20 AA) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50 AA, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=<50 AA) will be preferential for dense low-k like trench sidewall to...

  3. Reducing the Schottky barrier between few-layer MoTe2 and gold

    Science.gov (United States)

    Qi, Dianyu; Wang, Qixing; Han, Cheng; Jiang, Jizhou; Zheng, Yujie; Chen, Wei; Zhang, Wenjing; Thye Shen Wee, Andrew

    2017-12-01

    Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200-400 °C). The resulting Schottky barrier height of the annealed MoTe2/Au interface is low (~23 meV). A new Raman A g mode of the 1T‧ metallic phase of MoTe2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe2. The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the transformation rate. With this method, the mobility and ON-state current of the MoTe2 transistor increase by ~3-4 orders of magnitude, the photocurrent of vertically stacked graphene/MoTe2/Au device increases ~300%, and the response time decreases by ~20%.

  4. High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.

    Science.gov (United States)

    Zhang, Qing; Shao, Shuangshuang; Chen, Zheng; Pecunia, Vincenzo; Xia, Kai; Zhao, Jianwen; Cui, Zheng

    2018-05-09

    A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane. Photolithographic exposure from backside using bottom-gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 μm width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 10 8 , maximum mobility of 3.3 cm 2 V -1 s -1 , negligible hysteresis, and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high-resolution printing displays.

  5. Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

    KAUST Repository

    Brennan, Thomas P.; Trejo, Orlando; Roelofs, Katherine E.; Xu, John; Prinz, Fritz B.; Bent, Stacey F.

    2013-01-01

    Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.

  6. Composition, structure and electrical properties of alumina barrier layers grown in fluoride-containing oxalic acid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)], E-mail: jagmin@ktl.mii.lt; Vrublevsky, I. [Department of Microelectricals, Belarusian State University of Informatics and Radioelectricals, 6 Brovka Street, Minsk 220013 (Belarus); Kuzmarskyte, J.; Jasulaitiene, V. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)

    2008-04-15

    The composition, structure and electrical properties of alumina barrier layers grown by anodic oxidation in F{sup -}-containing (FC) and F{sup -}-free (FF) oxalic acid solutions were studied using the re-anodizing/dissolution technique, Fourier-transformed infrared and X-ray photoelectron spectroscopy. These results confirmed formation in FC anodizing solutions of films structurally different from ones grown in FF oxalic acid baths. It was found that the barrier layer of FC alumina films is composed of two layers differing in the dissolution rate. These differences are related to the formation in the FC electrolyte of a barrier layer composed of a more microporous outer part and a thin, non-porous and non-scalloped inner part consisting of aluminum oxide and aluminum fluoride.

  7. The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

    International Nuclear Information System (INIS)

    Watson, G.P.; Ast, D.G.; Anderson, T.J.; Pathangey, B.

    1993-01-01

    In a previous report [G. P. Watson, D. G. Ast, T. J. Anderson, and Y. Hayakawa, Appl. Phys. Lett. 58, 2517 (1991)] we demonstrated that the motion of misfit dislocations in InGaAs, grown by organometallic vapor phase epitaxy on patterned GaAs substrates, can be impeded even if the strained epitaxial layer is continuous. Trenches etched into GaAs before growth are known to act as a barrier to misfit dislocation propagation [E. A. Fitzgerald, G. P. Watson, R. E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, J. Appl. Phys. 65, 2220 (1989)] when those trenches create discontinuities in the epitaxial layers; but even shallow trenches, with continuous strained layers following the surface features, can act as barriers. By considering the strain energy required to change the length of the dislocation glide segments that stretch from the interface to the free surface, a simple model is developed that explains the major features of the unique blocking action observed at the trench edges. The trench wall angle is found to be an important parameter in determining whether or not a trench will block dislocation glide. The predicted blocking angles are consistent with observations made on continuous 300 and 600 nm thick In 0.04 Ga 0.96 As films on patterned GaAs. Based on the model, a structure is proposed that may be used as a filter to yield misfit dislocations with identical Burgers vectors or dislocations which slip in only one glide plane

  8. Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

    KAUST Repository

    Roelofs, Katherine E.

    2013-03-21

    Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

  9. Magnetic behaviour of arrays of Ni nanowires by electrodeposition into self-aligned titania nanotubes

    International Nuclear Information System (INIS)

    Prida, V.M.; Hernandez-Velez, M.; Cervera, M.; Pirota, K.; Sanz, R.; Navas, D.; Asenjo, A.; Aranda, P.; Ruiz-Hitzky, E.; Batallan, F.; Vazquez, M.; Hernando, B.; Menendez, A.; Bordel, N.; Pereiro, R.

    2005-01-01

    Arrays of Ni nanowires electrodeposited into self-aligned and randomly disordered titania nanotube arrays grown by anodization process are investigated by X-ray diffraction, SEM, rf-GDOES and VSM magnetometry. The titania nanotube outer diameter is about 160 nm, wall thickness ranging from 60 to 70 nm and 300 nm in depth. The so-obtained Ni nanowires reach above 100 nm diameter and 240 nm length, giving rise to coercive fields of 98 and 200 Oe in the perpendicular or parallel to the nanowires axis hysteresis loops, respectively. The formation of magnetic vortex domain states is also discussed

  10. Mechanical Properties of Layered La2Zr2O7 Thermal Barrier Coatings

    Science.gov (United States)

    Guo, Xingye; Li, Li; Park, Hyeon-Myeong; Knapp, James; Jung, Yeon-Gil; Zhang, Jing

    2018-04-01

    Lanthanum zirconate (La2Zr2O7) has been proposed as a promising thermal barrier coating (TBC) material due to its low thermal conductivity and high stability at high temperatures. In this work, both single and double-ceramic-layer (DCL) TBC systems of La2Zr2O7 and 8 wt.% yttria-stabilized zirconia (8YSZ) were prepared using air plasma spray (APS) technique. The thermomechanical properties and microstructure were investigated. Thermal gradient mechanical fatigue (TGMF) tests were applied to investigate the thermal cycling performance. The results showed that DCL La2Zr2O7 + 8YSZ TBC samples lasted fewer cycles compared with single-layered 8YSZ TBC samples in TGMF tests. This is because DCL La2Zr2O7 TBC samples had higher residual stress during the thermal cycling process, and their fracture toughness was lower than that of 8YSZ. Bond strength test results showed that 8YSZ TBC samples had higher bond strength compared with La2Zr2O7. The erosion rate of La2Zr2O7 TBC samples was higher than that of 8YSZ samples, due to the lower critical erodent velocity and fracture toughness of La2Zr2O7. DCL porous 8YSZ + La2Zr2O7 had a lower erosion rate than other SCL and DCL La2Zr2O7 coatings, suggesting that porous 8YSZ serves as a stress-relief buffer layer.

  11. Study on Stress Development in the Phase Transition Layer of Thermal Barrier Coatings

    Directory of Open Access Journals (Sweden)

    Yijun Chai

    2016-09-01

    Full Text Available Stress development is one of the significant factors leading to the failure of thermal barrier coating (TBC systems. In this work, stress development in the two phase mixed zone named phase transition layer (PTL, which grows between the thermally grown oxide (TGO and the bond coat (BC, is investigated by using two different homogenization models. A constitutive equation of the PTL based on the Reuss model is proposed to study the stresses in the PTL. The stresses computed with the proposed constitutive equation are compared with those obtained with Voigt model-based equation in detail. The stresses based on the Voigt model are slightly higher than those based on the Reuss model. Finally, a further study is carried out to explore the influence of phase transition proportions on the stress difference caused by homogenization models. Results show that the stress difference becomes more evident with the increase of the PTL thickness ratio in the TGO.

  12. In-Flight Self-Alignment Method Aided by Geomagnetism for Moving Basement of Guided Munitions

    Directory of Open Access Journals (Sweden)

    Shuang-biao Zhang

    2015-01-01

    Full Text Available Due to power-after-launch mode of guided munitions of high rolling speed, initial attitude of munitions cannot be determined accurately, and this makes it difficult for navigation and control system to work effectively and validly. An in-flight self-alignment method aided by geomagnetism that includes a fast in-flight coarse alignment method and an in-flight alignment model based on Kalman theory is proposed in this paper. Firstly a fast in-flight coarse alignment method is developed by using gyros, magnetic sensors, and trajectory angles. Then, an in-flight alignment model is derived by investigation of the measurement errors and attitude errors, which regards attitude errors as state variables and geomagnetic components in navigation frame as observed variables. Finally, fight data of a spinning projectile is used to verify the performance of the in-flight self-alignment method. The satisfying results show that (1 the precision of coarse alignment can attain below 5°; (2 the attitude errors by in-flight alignment model converge to 24′ at early of the latter half of the flight; (3 the in-flight alignment model based on Kalman theory has better adaptability, and show satisfying performance.

  13. High-frequency self-aligned graphene transistors with transferred gate stacks

    Science.gov (United States)

    Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

  14. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    International Nuclear Information System (INIS)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-01-01

    The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

  15. Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal

    Science.gov (United States)

    Malyar, Ivan V.; Gorin, Dmitry A.; Stetsyura, Svetlana V.

    2013-01-01

    In this report we present the analysis of I-V curves for MIS-structures like silicon substrate / nanodimensional polyelectrolyte layer / metal probe (contact) which is promising for biosensors, microfluidic chips, different devices of molecular electronics, such as OLEDs, solar cells, where polyelectrolyte layers can be used to modify semiconductor surface. The research is directed to investigate the contact phenomena which influence the resulting signal of devices mentioned above. The comparison of I-V characteristics of such structures measured by scanning tunnel microscopy (contactless technique) and using contact areas deposited by thermal evaporation onto the organic layer (the contact one) was carried out. The photoassisted I-V measurements and complex analysis based on Simmons and Schottky models allow one to extract the potential barriers and to observe the changes of charge transport in MIS-structures under illumination and after polyelectrolyte adsorption. The direct correlation between the thickness of the deposited polyelectrolyte layer and both equilibrium tunnel barrier and Schottky barrier height was observed for hybrid structures with polyethylenimine. The possibility of control over the I-V curves of hybrid structure and the height of the potential barriers (for different charge transports) by illumination was confirmed. Based on experimental data and complex analysis the band diagrams were plotted which illustrate the changes of potential barriers for MIS-structures due to the polyelectrolyte adsorption and under the illumination.

  16. Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

    Science.gov (United States)

    Majumdar, Shubhankar; Das, S.; Biswas, D.

    2015-08-01

    Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

  17. Design, installation, and performance of a multi-layered permeable reactive barrier, Los Alamos National Laboratory

    International Nuclear Information System (INIS)

    Kaszuba, John P.; Longmire, Patrick A.; Strietelmeier, Elizabeth A.; Taylor, Tammy P.; Den-Baars, Peter S.

    2004-01-01

    A multi-layered permeable reactive barrier (PRB) has been installed in Mortandad Canyon, on the Pajarito Plateau in the north-central part of LANL, to demonstrate in-situ treatment of a suite of contaminants with dissimilar geochemical properties. The PRB will also mitigate possible vulnerabilities from downgradient contaminant movement within alluvial and deeper perched groundwater. Mortandad Canyon was selected as the location for this demonstration project because the flow of alluvial groundwater is constrained by the geology of the canyon, a large network of monitoring wells already were installed along the canyon reach, and the hydrochemistry and contaminant history of the canyon is well-documented. The PRB uses a funnel-and-gate system with a series of four reactive media cells to immobilize or destroy contaminants present in alluvial groundwater, including strontium-90, plutonium-238,239,240, americium-241, perchlorate, and nitrate. The four cells, ordered by sequence of contact with the groundwater, consist of gravel-sized scoria (for colloid removal); phosphate rock containing apatite (for metals and radionuclides); pecan shells and cotton seed admixed with gravel (bio-barrier, to deplete dissolved oxygen and destroy potential RCRA organic compounds, nitrate and perchlorate); and limestone (pH buffering and anion adsorption). Design elements of the PRB are based on laboratory-scale treatability studies and on a field investigation of hydrologic, geochemical, and geotechnical parameters. The PRB was designed with the following criteria: 1-day residence time within the biobarrier, 10-year lifetime, minimization of surface water infiltration and erosion, optimization of hydraulic capture, and minimization of excavated material requiring disposal. Each layer has been equipped with monitoring wells or ports to allow sampling of groundwater and reactive media, and monitor wells are located immediately adjacent to the up- and down-gradient perimeter of the

  18. Compressibility effects on the non-linear receptivity of boundary layers to dielectric barrier discharges

    Science.gov (United States)

    Denison, Marie F. C.

    The reduction of drag and aerodynamic heating caused by boundary layer transition is of central interest for the development of hypersonic vehicles. Receptivity to flow perturbation in the form of Tollmien-Schlichting (TS) wave growth often determines the first stage of the transition process, which can be delayed by depositing specific excitations into the boundary layer. Weakly ionized Dielectric Barrier Discharge (DBD) actuators are being investigated as possible sources of such excitations, but little is known today about their interaction with high-speed flows. In this framework, the first part of the thesis is dedicated to a receptivity study of laminar compressible boundary layers over a flat plate by linear stability analysis following an adjoint operator formulation, under DBD representative excitations assumed independent of flow conditions. The second part of the work concentrates on the development of a coupled plasma-Navier and Stokes solver targeted at the study of supersonic flow and compressibility effects on DBD forcing and non-parallel receptivity. The linear receptivity study of quasi-parallel compressible flows reveals several interesting features such as a significant shift of the region of maximum receptivity deeper into the flow at high Mach number and strong wave amplitude reduction compared to incompressible flows. The response to DBD relevant excitation distributions and to variations of the base flow conditions and system length scales follows these trends. Observed absolute amplitude changes and relative sensitivity modifications between source types are related to the evolution of the offset between forcing peak profile and relevant adjoint mode maximum. The analysis highlights the crucial importance of designing and placing the actuator in a way that matches its force field to the position of maximum boundary layer receptivity for the specific flow conditions of interest. In order to address the broad time and length scale spectrum

  19. A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2014-08-01

    Full Text Available Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV exposure and backside-lift-off (BLO schemes can not only prevent the damage when etching the source/drain (S/D electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs exhibit comparable field-effect mobility (9.5 cm2/V·s, threshold voltage (3.39 V, and subthreshold swing (0.3 V/decade. The delay time of an inverter fabricated using the proposed process was considerably decreased.

  20. A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

    2014-08-11

    Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm²/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased.

  1. Self-aligned BCB planarization method for high-frequency signal injection in a VCSEL with an integrated modulator

    Science.gov (United States)

    Marigo-Lombart, Ludovic; Doucet, Jean-Baptiste; Lecestre, Aurélie; Reig, Benjamin; Rousset, Bernard; Thienpont, Hugo; Panajotov, Krassimir; Almuneau, Guilhem

    2016-04-01

    The huge increase of datacom capacities requires lasers sources with more and more bandwidth performances. Vertical-Cavity Surface-Emitting Lasers (VCSEL) in direct modulation is a good candidate, already widely used for short communication links such as in datacenters. Recently several different approaches have been proposed to further extend the direct modulation bandwidth of these devices, by improving the VCSEL structure, or by combining the VCSEL with another high speed element such as lateral slow light modulator or transistor/laser based structure (TVCSEL). We propose to increase the modulation bandwidth by vertically integrating a continuous-wave VCSEL with a high-speed electro-modulator. This vertical structure implies multiple electrodes with sufficiently good electrical separation between the different input electrical signals. This high frequency modulation requires both good electrical insulation between metal electrodes and an optimized design of the coplanar lines. BenzoCyclobutene (BCB) thanks to its low dielectric constant, low losses, low moisture absorption and good thermal stability, is often used as insulating layer. Also, BCB planarization offers the advantages of simpler and more reliable technological process flow in such integrated VCSEL/modulator structures with important reliefs. As described by Burdeaux et al. a degree of planarization (DOP) of about 95% can be achieved by simple spin coating whatever the device thickness. In most of the cases, the BCB planarization process requires an additional photolithography step in order to open an access to the mesa surface, thus involving a tight mask alignment and resulting in a degraded planarization. In this paper, we propose a self-aligned process with improved BCB planarization by combining a hot isostatic pressing derived from nanoimprint techniques with a dry plasma etching step.

  2. Characteristics of powdered activated carbon treated with dielectric barrier discharge for electric double-layer capacitors

    International Nuclear Information System (INIS)

    Tashima, Daisuke; Yoshitama, Hiromu; Sakoda, Tatsuya; Okazaki, Akihito; Kawaji, Takayuki

    2012-01-01

    Highlights: ► The specific capacitance of the EDLCs could be improved by oxygen plasma treatment. ► 15 s treated EDLCs showed a 20% increase in capacitance relative to untreated EDLCs. ► The plasma treatment yields EDLCs that are suitable for high-energy applications. - Abstract: The electrochemical properties of electric double-layer capacitors (EDLCs) made with plasma-treated powdered activated carbon (treated using a dielectric barrier discharge) were examined using cyclic voltammetry (CV), Cole–Cole plots, and X-ray photoelectron spectroscopy (XPS). The dielectric barrier discharge method, which operates at atmospheric pressure, dramatically reduces the processing time and does not require vacuum equipment, making it a more practical alternative than low-pressure plasma treatment. The experimental data indicate that the specific capacitance of the EDLCs could be improved by oxygen plasma treatment. Capacitance of EDLCs made with activated carbon treated for 15 s showed 193.5 F/g that 20% increase in the specific capacitance relative to untreated EDLCs. This result indicates that the plasma treatment yields EDLCs that are suitable for high-energy applications. The enhancement of capacitance was mainly attributed to an increase in the BET surface area of the activated carbon and the creation of carboxyl groups on the surface of the carbon. The carboxyl groups induced oxidation–reduction reactions in the presence of O 2 which was included in the operation gas. In addition, the carboxyl groups improved the penetration of the electrolyte solution into the carbon electrodes.

  3. Charge modification of the endothelial surface layer modulates the permeability barrier of isolated rat mesenteric small arteries

    NARCIS (Netherlands)

    van Haaren, Paul M. A.; VanBavel, Ed; Vink, Hans; Spaan, Jos A. E.

    2005-01-01

    We hypothesized that modulation of the effective charge density of the endothelial surface layer ( ESL) results in altered arterial barrier properties to transport of anionic solutes. Rat mesenteric small arteries ( diameter similar to 190 mu m) were isolated, cannulated, perfused, and superfused

  4. Field emission from carbon nanotube bundle arrays grown on self-aligned ZnO nanorods

    International Nuclear Information System (INIS)

    Li Chun; Fang Guojia; Yuan Longyan; Liu Nishuang; Ai Lei; Xiang Qi; Zhao Dongshan; Pan Chunxu; Zhao Xingzhong

    2007-01-01

    The field emission (FE) properties of carbon nanotube (CNT) bundle arrays grown on vertically self-aligned ZnO nanorods (ZNRs) are reported. The ZNRs were first synthesized on ZnO-seed-coated Si substrate by the vapour phase transport method, and then the radically grown CNTs were grown directly on the surface of the ZNRs from ethanol flames. The CNT/ZNR composite showed a turn-on field of 1.5 V μm -1 (at 0.1 μA cm -2 ), a threshold field of 4.5 V μm -1 (at 1 mA cm -2 ) and a stable emission current with fluctuations of 5%, demonstrating significantly enhanced FE of ZNRs due to the low work function and high aspect ratio of the CNTs, and large surface-to-volume ratio of the underlying ZNRs

  5. Bright single photon source based on self-aligned quantum dot–cavity systems

    DEFF Research Database (Denmark)

    Maier, Sebastian; Gold, Peter; Forchel, Alfred

    2014-01-01

    We report on a quasi-planar quantum-dot-based single-photon source that shows an unprecedented high extraction efficiency of 42% without complex photonic resonator geometries or post-growth nanofabrication. This very high efficiency originates from the coupling of the photons emitted by a quantum...... dot to a Gaussian shaped nanohill defect that naturally arises during epitaxial growth in a self-aligned manner. We investigate the morphology of these defects and characterize the photonic operation mechanism. Our results show that these naturally arising coupled quantum dot-defects provide a new...... avenue for efficient (up to 42% demonstrated) and pure (g2(0) value of 0.023) single-photon emission....

  6. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    International Nuclear Information System (INIS)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

    2014-01-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

  7. A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

    Science.gov (United States)

    Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

    The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

  8. Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

    International Nuclear Information System (INIS)

    Sood, D.K.; Muralidhar, G.K.

    1998-01-01

    This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

  9. Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer

    International Nuclear Information System (INIS)

    Liu, B.T.; Yan, X.B.; Zhang, X.; Zhou, Y.; Guo, Y.N.; Bian, F.; Zhang, X.Y.

    2009-01-01

    Ni-Ti films prepared at 10 W and 70 W by rf magnetron sputtering are investigated as the oxygen diffusion barrier layer, it is found that crystallinity of Ni-Ti film does not greatly depend on the deposition power. X-ray photoelectron spectroscopy indicates that Ni is still in the form of metallic state from the binding energies of both Ni 2p 3/2 and Ni 2p 1/2 spectra for the sample with 10 W prepared Ni-Ti, however, Ni is oxidized for 70 W prepared Ni-Ti film. Moreover, the (La 0.5 Sr 0.5 )CoO 3 /Pb(Zr 0.40 Ti 0.60 )O 3 /(La 0.5 Sr 0.5 )CoO 3 capacitor grown on high power prepared Ni-Ti film is leaky, however, the capacitor on low power prepared Ni-Ti film possesses very promising physical properties (i.e. remnant polarization of ∼27 μC/cm 2 at 5 V and maximum dielectric constant of 940). Leakage current density of the capacitor grown on low power prepared Ni-Ti film is further investigated, it meets ohmic behavior ( 1.0 V).

  10. Polystyrene films as barrier layers for corrosion protection of copper and copper alloys.

    Science.gov (United States)

    Románszki, Loránd; Datsenko, Iaryna; May, Zoltán; Telegdi, Judit; Nyikos, Lajos; Sand, Wolfgang

    2014-06-01

    Dip-coated polystyrene layers of sub-micrometre thickness (85-500nm) have been applied on copper and copper alloys (aluminium brass, copper-nickel 70/30), as well as on stainless steel 304, and produced an effective barrier against corrosion and adhesion of corrosion-relevant microorganisms. According to the dynamic wettability measurements, the coatings exhibited high advancing (103°), receding (79°) and equilibrium (87°) contact angles, low contact angle hysteresis (6°) and surface free energy (31mJ/m(2)). The corrosion rate of copper-nickel 70/30 alloy samples in 3.5% NaCl was as low as 3.2μm/a (44% of that of the uncoated samples), and in artificial seawater was only 0.9μm/a (29% of that of the uncoated samples). Cell adhesion was studied by fluorescence microscopy, using monoculture of Desulfovibrio alaskensis. The coatings not only decreased the corrosion rate but also markedly reduced the number of bacterial cells adhered to the coated surfaces. The PS coating on copper gave the best result, 2×10(3)cells/cm(2) (1% of that of the uncoated control). © 2013 Elsevier B.V. All rights reserved.

  11. Thin-film Nanofibrous Composite Membranes Containing Cellulose or Chitin Barrier Layers Fabricated by Ionic Liquids

    Energy Technology Data Exchange (ETDEWEB)

    H Ma; B Hsiao; B Chu

    2011-12-31

    The barrier layer of high-flux ultrafiltration (UF) thin-film nanofibrous composite (TFNC) membranes for purification of wastewater (e.g., bilge water) have been prepared by using cellulose, chitin, and a cellulose-chitin blend, regenerated from an ionic liquid. The structures and properties of regenerated cellulose, chitin, and a cellulose-chitin blend were analyzed with thermogravimetric analysis (TGA) and wide-angle X-ray diffraction (WAXD). The surface morphology, pore size and pore size distribution of TFNC membranes were determined by SEM images and molecular weight cut-off (MWCO) methods. An oil/water emulsion, a model of bilge water, was used as the feed solution, and the permeation flux and rejection ratio of the membranes were investigated. TFNC membranes based on the cellulose-chitin blend exhibited 10 times higher permeation flux when compared with a commercial UF membrane (PAN10, Sepro) with a similar rejection ratio after filtration over a time period of up to 100 h, implying the practical feasibility of such membranes for UF applications.

  12. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

    NARCIS (Netherlands)

    Nag, M.; Muller, R.N.; Steudel, S.; Smout, S.; Bhoolokam, A.; Myny, K.; Schols, S.; Genoe, J.; Cobb, B.; Kumar, Abhishek; Gelinck, G.H.; Fukui, Y.; Groeseneken, G.; Heremans, P.

    2015-01-01

    We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at

  13. Capillary self-alignment dynamics for R2R manufacturing of mesoscopic system-in-foil devices

    NARCIS (Netherlands)

    Arutinov, G.; Quintero, A.V.; Smits, E.C.P.; Remoortere, B. van; Brand, J. van den; Schoo, H.F.M.; Briand, D.; Rooij, N.F. de; Dietzel, A.H.

    2012-01-01

    This paper reports a study on the dynamics of foil-based functional component self-alignment onto patterned test substrates and its demonstration when integrating a flexible sensor onto a printed circuitry. We investigate the dependence of alignment time and final precision of stacking of mm- and

  14. Mechanical Design, Simulation, and Testing of Self-Aligning Gaussian Telescope and Stand for ITER LFS Reflectometer Diagnostic

    Science.gov (United States)

    Broughton, Rachel; Gomez, Michael; Zolfaghari, Ali; Morris, Lewis

    2016-10-01

    A self-aligning Gaussian telescope has been designed to compensate for the effect of movement in the ITER vacuum vessel on the transmission line. The purpose of the setup is to couple microwaves into and out of the vessel across the vacuum windows while allowing for both slow movements of the vessel, due to thermal growth, and rapid movements, due to vibrations and disruptions. Additionally, a test stand has been designed specifically to hold this telescope in order to imitate these movements. Consequently, this will allow for the assessment of the efficacy in applying the self-aligning Gaussian telescope approach. The motions of the test stand, as well as the stress on the telescope mechanism, have been virtually simulated using ANSYS workbench. A prototype of this test stand and self-aligning telescope will be built using a combination of custom machined parts and ordered parts. The completed mechanism will be tested at the lab in four different ways: slow single- and multi-direction movements, rapid multi-direction movement, functional laser alignment and self-aligning tests, and natural frequency tests. Once the prototype successfully passes all requirements, it will be tested with microwaves in the LFSR transmission line test stand at General Atomics. This work is supported by US DOE Contract No. DE-AC02-09CH11466.

  15. Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

    Energy Technology Data Exchange (ETDEWEB)

    Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

    2005-09-30

    Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.

  16. Performance of Zr as FCCI barrier layer for metallic fuel of fast reactor

    International Nuclear Information System (INIS)

    Kaity, Santu; Bhagat, R.K.; Kutty, T.R.G.; Kumar, Arun; Laik, A.; Kamath, H.S.

    2011-01-01

    Uranium-plutonium (U-Pu) and uranium-plutonium-zirconium (U-Pu-Zr) alloys have been considered as promising advanced fuels for fast reactor in India because of its high breeding potential, high thermal conductivity, high fissile and fertile atom densities, low doubling time and ease of fabrication compared to other ceramic fuels. The chemical compatibility between the fuel and clad material also known as fuel-clad chemical interaction (FCCI) has been recognized as one of the major concerns about the performance of the metallic fuel. Primarily, two design concepts have been proposed for the metallic fuel development programme for FBRs. One of them is based on sodium bonded ternary U-Pu-Zr alloy with T91 grade steel clad, and the other consists of binary U-Pu alloy mechanically bonded to T91 clad with a Zr liner between the fuel and clad. U will be the axial blanket material for U-Pu binary fuel. In the present investigation, the performance of Zr as FCCI barrier layer was studied through diffusion couple experiments of U/Zr/T91. A thin Zr foil (thickness ∼ 200 μm) sandwiched between U and T91 discs was kept inside a fixture made of Inconel 600 alloy. The fixture was encapsulated in quartz tube under Helium atmosphere and then heated at 650, 700 and 750 deg C for upto 1500 h. The extent of reaction and composition of phases formed were analyzed by scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS) and electron probe microanalyser (EPMA) equipped with wavelength dispersive spectrometer (WDS)

  17. Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

    International Nuclear Information System (INIS)

    Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

    2008-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer

    International Nuclear Information System (INIS)

    Guo Hui-Qiang; Tang Wei-Yue; Liu Liang; Wei Jian; Li Da-Lai; Feng Jia-Feng; Han Xiu-Feng

    2015-01-01

    Low frequency noise has been investigated at room temperature for asymmetric double barrier magnetic tunnel junctions (DBMTJs), where the coupling between the top and middle CoFeB layers is antiferromagnetic with a 0.8-nm thin top MgO barrier of the CoFeB/MgO/CoFe/CoFeB/MgO/CoFeB DBMTJ. At enough large bias, 1/f noise dominates the voltage noise power spectra in the low frequency region, and is conventionally characterized by the Hooge parameter α mag . With increasing external field, the top and bottom ferromagnetic layers are aligned by the field, and then the middle free layer rotates from antiparallel state (antiferromagnetic coupling between top and middle ferromagnetic layers) to parallel state. In this rotation process α mag and magnetoresistance-sensitivity-product show a linear dependence, consistent with the fluctuation dissipation relation. With the magnetic field applied at different angles (θ) to the easy axis of the free layer, the linear dependence persists while the intercept of the linear fit satisfies a cos(θ) dependence, similar to that for the magnetoresistance, suggesting intrinsic relation between magnetic losses and magnetoresistance. (rapid communication)

  19. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    KAUST Repository

    Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

    2013-01-01

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

  20. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    KAUST Repository

    Ip, Alexander H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

  1. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  2. Wafer Scale Integration of CMOS Chips for Biomedical Applications via Self-Aligned Masking.

    Science.gov (United States)

    Uddin, Ashfaque; Milaninia, Kaveh; Chen, Chin-Hsuan; Theogarajan, Luke

    2011-12-01

    This paper presents a novel technique for the integration of small CMOS chips into a large area substrate. A key component of the technique is the CMOS chip based self-aligned masking. This allows for the fabrication of sockets in wafers that are at most 5 µm larger than the chip on each side. The chip and the large area substrate are bonded onto a carrier such that the top surfaces of the two components are flush. The unique features of this technique enable the integration of macroscale components, such as leads and microfluidics. Furthermore, the integration process allows for MEMS micromachining after CMOS die-wafer integration. To demonstrate the capabilities of the proposed technology, a low-power integrated potentiostat chip for biosensing implemented in the AMI 0.5 µm CMOS technology is integrated in a silicon substrate. The horizontal gap and the vertical displacement between the chip and the large area substrate measured after the integration were 4 µm and 0.5 µm, respectively. A number of 104 interconnects are patterned with high-precision alignment. Electrical measurements have shown that the functionality of the chip is not affected by the integration process.

  3. High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

    Directory of Open Access Journals (Sweden)

    Vamvoukakis K.

    2017-01-01

    Full Text Available The process technology for the fabrication of 4H-SiC trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET has been developed. The optimized TIVJFETs have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes only four lithography steps. A source-pillars sidewall oxidation and subsequent removal of the metallization from the top of the sidewall oxide ensured isolation between gate and source. Optimum planarization of the source pillars top has been performed by cyclotene spin coating and etch back. The effect of the channel geometry on the electrical characteristics has been studied by varying its length (0.3 and 1.2μm and its width (1.5-5μm. The voltage blocking exhibits a triode shape, which is typical for a static-induction transistor (SIT operation. The transistors exhibited high ON current handling capabilities (Direct Current density >1kA/cm2 and values of RON ranging from 6 - 12 mΩ•cm2 depending on the channel length. Maximum voltage blocking was 800V limited by the edge termination. The maximum voltage gain was 51. Most transistors were normally-on. Normally-off operation has been observed for transistors lower than 2μm channel width (mask level and deep implantation.

  4. Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface

    International Nuclear Information System (INIS)

    Pal, Debdas; Hoag, David; Barter, Margaret

    2012-01-01

    Unusual negative resistance characteristics were observed in low barrier HMIC (Heterolithic Microwave Integrated Circuit) silicon Schottky diodes with HF (hydrofluoric acid)/IPA (isopropyl alcohol) vapor clean prior to epitaxial growth of silicon. SIMS (secondary ion mass spectroscopy) analysis and the results of the buried layer structure confirmed boron contamination in the substrate/epitaxial layer interface. Consequently the structure turned into a thyristor like p-n-p-n device. A dramatic reduction of boron contamination was found in the wafers with H 2 0/HCl/HF dry only clean prior to growth, which provided positive resistance characteristics. Consequently the mean differential resistance at 10 mA was reduced to about 8.1 Ω. The lower series resistance (5.6–5.9 Ω) and near 1 ideality factor (1.03–1.06) of the Schottky devices indicated the good quality of the epitaxial layer. (paper)

  5. Method of making a self-aligned schottky metal semi-conductor field effect transistor with buried source and drain

    International Nuclear Information System (INIS)

    Bol, I.

    1984-01-01

    A semi-conductor structure and particularly a high speed VLSI Self-Aligned Schottky Metal Semi-Conductor Field Effect Transistor with buried source and drain, fabricated by the ion implantation of source and drain areas at a predetermined range of depths followed by very localized laser annealing to electrically reactivate the amorphous buried source and drain areas thereby providing effective vertical separation of the channel from the buried source and drain respectively. Accordingly, spatial separations between the self-aligned gate-to-drain, and gate-to-source can be relatively very closely controlled by varying the doping intensity and duration of the implantation thereby reducing the series resistance and increasing the operating speed

  6. Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration

    International Nuclear Information System (INIS)

    Yang, L.Y.; Zhang, D.H.; Li, C.Y.; Foo, P.D.

    2004-01-01

    Tantalum (Ta), TaN and bilayer Ta/TaN barriers deposited on ultra-low-k porous polymer (ULKPP) and the thermal stability of their structures are comparatively investigated using various techniques. The Ta/ultra-low-k polymer shows the smallest sheet resistance, but the poorest thermal stability, while TaN on the ultra-low-k polymer shows the highest resistance but the best thermal stability. The bi-layer Ta/TaN barrier takes the advantage of both Ta and TaN barriers and gives reasonable resistance and thermal stability. The electrical tests indicate that the Cu lines with the TaN and bi-layer Ta/TaN barriers exhibit the smaller leakage current and higher breakdown voltage compared with the Cu lines with the Ta barrier. The better thermal stability of the TaN and the bi-layer Ta/TaN barriers is mainly due to the amorphous/nanostructure and less grain boundaries of the barriers. In addition, the texture discontinuity at the Ta/TaN interfaces in the bi-layers barrier also plays an important role in reducing mutual diffusion of Ta atoms in the Ta barrier and some atoms in the ultra-low-k porous polymer

  7. Ultrasonic welding for fast bonding of self-aligned structures in lab-on-a-chip systems

    DEFF Research Database (Denmark)

    Kistrup, Kasper; Poulsen, Carl Esben; Hansen, Mikkel Fougt

    2015-01-01

    Ultrasonic welding is a rapid, promising bonding method for the bonding of polymer chips; yet its use is still limited. We present two lab-on-a-chip applications where ultrasonic welding can be preferably applied: (1) Self-aligned gapless bonding of a two-part chip with a tolerance of 50 um; (2...... solutions offered here can significantly help bridge the gap between academia and industry, where the differences in production methods and materials pose a challenge when transferring technology....

  8. Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Liu Zi-Yang; Zhang Jin-Cheng; Duan Huan-Tao; Xue Jun-Shuai; Lin Zhi-Yu; Ma Jun-Cai; Xue Xiao-Yong; Hao Yue

    2011-01-01

    The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Enhancement of seeding for electroless Cu plating of metallic barrier layers by using alkyl self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Sung-Te [Department of Electronic Engineering, Hsiuping University of Science and Technology, Dali 412, Taichung, Taiwan (China); Chung, Yu-Cheng [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Fang, Jau-Shiung [Department of Materials Science and Engineering, National Formosa University, Huwei 632, Taiwan (China); Cheng, Yi-Lung [Department of Electrical Engineering, National Chi-Nan University, Puli, Nantou 545, Taiwan (China); Chen, Giin-Shan, E-mail: gschen@fcu.edu.tw [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China)

    2017-05-31

    Highlights: • Ta barrier layers are used as model substrates for seeding of electroless plating. • Ta layers seeded with Ta-OH yield seeds with limited density and large size (>10 nm). • Substantial improvement of seeding is obtained with functionalized SAMs. • The mechanism of seeding improvement by functionalized SAMs is clearly clarified. - Abstract: Tethering a self-assembled monolayer (SAM) on ultralow-k (porous) dielectric materials as a seed-trapping layer for electroless Cu plating has been extensively studied. By contrast, literature on direct electroless Cu plating of metallic barrier layers assisted by SAMs is scarce. Therefore, Ta, a crucial component of barrier materials for Cu interconnect metallization, was investigated as a model substrate for a new seeding (Ni catalyst formation) process of electroless Cu plating. Transmission and scanning electron microscopies indicated that catalytic particles formed on Ta films through Ta−OH groups tend to become aggregates with an average size of 14 nm and density of 2 × 10{sup 15} m{sup −2}. By contrast, Ta films with a plasma-functionalized SAM tightly bound catalytic particles without agglomeration, thus yielding a markedly smaller size (3 nm) and higher density (3 × 10{sup 16} m{sup −2}; one order greater than those formed by other novel methods). X-ray photoelectron spectroscopy clearly identified the types of material species and functional groups induced at each step of the seeding process. Moreover, the phase of the catalytic particles, either nickel alkoxide, Ni(OH){sub 2}, or metallic Ni, along with the seed-bonding mechanism, was also unambiguously distinguished. The enhancement of film-formation quality of Cu by the new seeding process was thus demonstrated.

  10. Intradomain phase transitions in flexible block copolymers with self-aligning segments

    Science.gov (United States)

    Burke, Christopher J.; Grason, Gregory M.

    2018-05-01

    We study a model of flexible block copolymers (BCPs) in which there is an enlthalpic preference for orientational order, or local alignment, among like-block segments. We describe a generalization of the self-consistent field theory of flexible BCPs to include inter-segment orientational interactions via a Landau-de Gennes free energy associated with a polar or nematic order parameter for segments of one component of a diblock copolymer. We study the equilibrium states of this model numerically, using a pseudo-spectral approach to solve for chain conformation statistics in the presence of a self-consistent torque generated by inter-segment alignment forces. Applying this theory to the structure of lamellar domains composed of symmetric diblocks possessing a single block of "self-aligning" polar segments, we show the emergence of spatially complex segment order parameters (segment director fields) within a given lamellar domain. Because BCP phase separation gives rise to spatially inhomogeneous orientation order of segments even in the absence of explicit intra-segment aligning forces, the director fields of BCPs, as well as thermodynamics of lamellar domain formation, exhibit a highly non-linear dependence on both the inter-block segregation (χN) and the enthalpy of alignment (ɛ). Specifically, we predict the stability of new phases of lamellar order in which distinct regions of alignment coexist within the single mesodomain and spontaneously break the symmetries of the lamella (or smectic) pattern of composition in the melt via in-plane tilt of the director in the centers of the like-composition domains. We further show that, in analogy to Freedericksz transition confined nematics, the elastic costs to reorient segments within the domain, as described by the Frank elasticity of the director, increase the threshold value ɛ needed to induce this intra-domain phase transition.

  11. Line roughness improvements on self-aligned quadruple patterning by wafer stress engineering

    Science.gov (United States)

    Liu, Eric; Ko, Akiteru; Biolsi, Peter; Chae, Soo Doo; Hsieh, Chia-Yun; Kagaya, Munehito; Lee, Choongman; Moriya, Tsuyoshi; Tsujikawa, Shimpei; Suzuki, Yusuke; Okubo, Kazuya; Imai, Kiyotaka

    2018-04-01

    In integrated circuit and memory devices, size shrinkage has been the most effective method to reduce production cost and enable the steady increment of the number of transistors per unit area over the past few decades. In order to reduce the die size and feature size, it is necessary to minimize pattern formation in the advance node development. In the node of sub-10nm, extreme ultra violet lithography (EUV) and multi-patterning solutions based on 193nm immersionlithography are the two most common options to achieve the size requirement. In such small features of line and space pattern, line width roughness (LWR) and line edge roughness (LER) contribute significant amount of process variation that impacts both physical and electrical performances. In this paper, we focus on optimizing the line roughness performance by using wafer stress engineering on 30nm pitch line and space pattern. This pattern is generated by a self-aligned quadruple patterning (SAQP) technique for the potential application of fin formation. Our investigation starts by comparing film materials and stress levels in various processing steps and material selection on SAQP integration scheme. From the cross-matrix comparison, we are able to determine the best stack of film selection and stress combination in order to achieve the lowest line roughness performance while obtaining pattern validity after fin etch. This stack is also used to study the step-by-step line roughness performance from SAQP to fin etch. Finally, we will show a successful patterning of 30nm pitch line and space pattern SAQP scheme with 1nm line roughness performance.

  12. Salinity-induced mixed and barrier layers in the southwestern tropical Atlantic Ocean off the northeast of Brazil

    Directory of Open Access Journals (Sweden)

    M. Araujo

    2011-01-01

    Full Text Available High-resolution hydrographic observations of temperature and salinity are used to analyze the formation and distribution of isothermal depth (ZT, mixed depth (ZM and barrier layer thickness (BLT in a section of the southwestern Atlantic (0°30´ N–14°00´ S; 31°24´–41°48´ W, adjacent to the northeastern Brazilian coast. Analyzed data consists of 279 CTD casts acquired during two cruises under the Brazilian REVIZEE Program. One occurred in late austral winter (August–October 1995 and another in austral summer (January–April 1997. Oceanic observations are compared to numerical modeling results obtained from the French Mercator-Coriolis Program. Results indicate that the intrusion of subtropical Salinity Maximum Waters (SMW is the major process contributing to the seasonal barrier layer formation. These waters are brought by the South Equatorial Current (SEC, from the subtropical region, into the western tropical Atlantic boundary. During late austral winter southeastern trade winds are more intense and ITCZ precipitations induce lower surface salinity values near the equator. During this period a 5–90 m thick BLT (median = 15 m is observed and BLT > 30 m is restricted to latitudes higher than 8° S, where the intrusion of salty waters between 8°–12.3° S creates shallow mixed layers over deep (ZT ≥ 90 m isothermal layers. During austral summer, shallow isothermal and mixed layers prevail, when northeasterly winds are predominant and evaporation overcomes precipitation, causing saltier waters at the surface/subsurface layers. During that period observed BLT varies from 5 to 70 m and presents thicker median value of 35 m, when comparing to the winter. Furthermore, BLT ≥ 30 m is observed not only in the southernmost part of the study area, as verified during late winter, but in the latitude range 2°–14° S, where near-surface salty waters are transported westward by the

  13. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

    Energy Technology Data Exchange (ETDEWEB)

    Jie, Qing; Ren, Zhifeng; Chen, Gang

    2017-08-01

    Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

  14. Barrier properties of plastic films coated with an Al{sub 2}O{sub 3} layer by roll-to-toll atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hirvikorpi, Terhi, E-mail: Terhi.Hirvikorpi@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Laine, Risto, E-mail: Risto.Laine@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Vähä-Nissi, Mika, E-mail: Mika.Vaha-Nissi@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kilpi, Väinö, E-mail: Vaino.Kilpi@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Salo, Erkki, E-mail: Erkki.Salo@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Li, Wei-Min, E-mail: Wei-Min.Li@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Lindfors, Sven, E-mail: Sven.Lindfors@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland); Vartiainen, Jari, E-mail: Jari.Vartiainen@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kenttä, Eija, E-mail: Eija.Kentta@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Nikkola, Juha, E-mail: Juha.Nikkola@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1300, FI-33101 Tampere (Finland); Harlin, Ali, E-mail: Ali.Harlin@vtt.fi [VTT Technical Research Centre of Finland, Biologinkuja 7, Espoo, P.O. Box 1000, FI-02044 VTT (Finland); Kostamo, Juhana, E-mail: Juhana.Kostamo@picosun.com [Picosun Oy, Tietotie 3, FI-02150 Espoo (Finland)

    2014-01-01

    Thin (30–40 nm) and highly uniform Al{sub 2}O{sub 3} coatings have been deposited at relatively low temperature of 100 °C onto various polymeric materials employing the atomic layer deposition (ALD) technique, both batch and roll-to-roll (R2R) mode. The applications for ALD have long been limited those feasible for batch processing. The work demonstrates that R2R ALD can deposit thin films with properties that are comparable to the film properties fabricated by in batch. This accelerates considerably the commercialization of many products, such as flexible, printed electronics, organic light-emitting diode lighting, third generation thin film photovoltaic devices, high energy density thin film batteries, smart textiles, organic sensors, organic/recyclable packaging materials, and flexible displays, to name a few. - Highlights: • Thin and uniform Al{sub 2}O{sub 3} coatings have been deposited onto polymers materials. • Batch and roll-to-roll (R2R) atomic layer deposition (ALD) have been employed. • Deposition with either process improved the barrier properties. • Sensitivity of coated films to defects affects barrier obtained with R2R ALD.

  15. Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

    Energy Technology Data Exchange (ETDEWEB)

    Elrawemi, Mohamed, E-mail: Mohamed.elrawemi@hud.ac.uk [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Blunt, Liam; Fleming, Leigh [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Bird, David, E-mail: David.Bird@uk-cpi.com [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Robbins, David [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Sweeney, Francis [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom)

    2014-11-03

    Transparent barrier films such as Al{sub 2}O{sub 3} used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules. However, the existence of micro-scale defects in the barrier surface topography has been shown to have the potential to facilitate water vapour ingress, thereby reducing cell efficiency and causing internal electrical shorts. Previous work has shown that small defects (≤ 3 μm lateral dimension) were less significant in determining water vapour ingress. In contrast, larger defects (≥ 3 μm lateral dimension) seem to be more detrimental to the barrier functionality. Experimental results based on surface topography segmentation analysis and a model presented in this paper will be used to test the hypothesis that the major contributing defects to water vapour transmission rate are small numbers of large defects. The model highlighted in this study has the potential to be used for gaining a better understanding of photovoltaic module efficiency and performance. - Highlights: • A model of water vapour permeation through barrier defects is presented. • The effect of the defects on the water vapour permeability is investigated. • Defect density correlates with water vapour permeability. • Large defects may dominate the permeation properties of the barrier film.

  16. Promoting Barrier Performance and Cathodic Protection of Zinc-Rich Epoxy Primer via Single-Layer Graphene

    Directory of Open Access Journals (Sweden)

    Jingrong Liu

    2018-05-01

    Full Text Available The effect of single-layer graphene sheets (Gr on the corrosion protection of zinc-rich epoxy primers (ZRPs was investigated. Scanning electron microscopy (SEM with an energy dispersive spectrometer (EDS were used to characterize morphology and composition of the coatings after immersion for 25 days. The cross-sectional SEM images and X-ray photoelectron spectroscopy (XPS confirmed that the addition of single-layer graphene facilitated assembling of zinc oxides on the interface between the coating and the steel. The open circuit potential (OCP, electrochemical impedance spectroscopy (EIS measurements revealed that both the cathodic protection and barrier performance of the ZRP were enhanced after addition of 0.6 wt. % Gr (Gr0.6-ZRP. In addition, the cathodic protection property of the Gr0.6-ZRP was characterized quantitatively by localized electrochemical impedance spectroscopy (LEIS in the presence of an artificial scratch on the coating. The results demonstrate that moderate amounts of single-layer graphene can significantly improve corrosion resistance of ZRP, due to the barrier protection and cathodic protection effects.

  17. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

    Science.gov (United States)

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-01-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  18. Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

    Science.gov (United States)

    Qiu, Dongri; Kim, Eun Kyu

    2015-09-01

    We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

  19. Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.

    Science.gov (United States)

    Qiu, Dongri; Kim, Eun Kyu

    2015-09-03

    We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2 system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2 have tunable negative barriers in the range of 300 to -46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

  20. Effect of Layer-Graded Bond Coats on Edge Stress Concentration and Oxidation Behavior of Thermal Barrier Coatings

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.; Miller, Robert A.

    1998-01-01

    Thermal barrier coating (TBC) durability is closely related to design, processing and microstructure of the coating Z, tn systems. Two important issues that must be considered during the design of a thermal barrier coating are thermal expansion and modulus mismatch between the substrate and the ceramic layer, and substrate oxidation. In many cases, both of these issues may be best addressed through the selection of an appropriate bond coat system. In this study, a low thermal expansion and layer-graded bond coat system, that consists of plasma-sprayed FeCoNiCrAl and FeCrAlY coatings, and a high velocity oxyfuel (HVOF) sprayed FeCrAlY coating, is developed to minimize the thermal stresses and provide oxidation resistance. The thermal expansion and oxidation behavior of the coating system are also characterized, and the strain isolation effect of the bond coat system is analyzed using the finite element method (FEM). Experiments and finite element results show that the layer-graded bond coat system possesses lower interfacial stresses. better strain isolation and excellent oxidation resistance. thus significantly improving the coating performance and durability.

  1. Diffusion barrier and adhesion properties of SiO(x)N(y) and SiO(x) layers between Ag/polypyrrole composites and Si substrates.

    Science.gov (United States)

    Horváth, Barbara; Kawakita, Jin; Chikyow, Toyohiro

    2014-06-25

    This paper describes the interface reactions and diffusion between silver/polypyrrole (Ag/PPy) composite and silicon substrate. This composite material can be used as a novel technique for 3D-LSI (large-scale integration) by the fast infilling of through-silicon vias (TSV). By immersion of the silicon wafer with via holes into the dispersed solution of Ag/PPy composite, the holes are filled with the composite. It is important to develop a layer between the composite and the Si substrate with good diffusion barrier and adhesion characteristics. In this paper, SiOx and two types of SiOxNy barrier layers with various thicknesses were investigated. The interface structure between the Si substrate, the barrier, and the Ag/PPy composite was characterized by transmission electron microscopy. The adhesion and diffusion properties of the layers were established for Ag/PPy composite. Increasing thickness of SiOx proved to permit less Ag to transport into the Si substrate. SiOxNy barrier layers showed very good diffusion barrier characteristics; however, their adhesion depended strongly on their composition. A barrier layer composition with good adhesion and Ag barrier properties has been identified in this paper. These results are useful for filling conductive metal/polymer composites into TSV.

  2. Thin concentrator photovoltaic module with micro-solar cells which are mounted by self-align method using surface tension of melted solder

    Science.gov (United States)

    Hayashi, Nobuhiko; Terauchi, Masaharu; Aya, Youichirou; Kanayama, Shutetsu; Nishitani, Hikaru; Nakagawa, Tohru; Takase, Michihiko

    2017-09-01

    We are developing a thin and lightweight CPV module using small size lens system made from poly methyl methacrylate (PMMA) with a short focal length and micro-solar cells to decrease the transporting and the installing costs of CPV systems. In order to achieve high conversion efficiency in CPV modules using micro-solar cells, the micro-solar cells need to be mounted accurately to the irradiated region of the concentrated sunlight. In this study, we have successfully developed self-align method thanks to the surface tension of the melted solder even utilizing commercially available surface-mounting technology (SMT). Solar cells were self-aligned to the specified positions of the circuit board by this self-align method with accuracy within ±10 µm. We actually fabricated CPV modules using this self-align method and demonstrated high conversion efficiency of our CPV module.

  3. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

    KAUST Repository

    Brennan, Thomas P.; Bakke, Jonathan R.; Ding, I-Kang; Hardin, Brian E.; Nguyen, William H.; Mondal, Rajib; Bailie, Colin D.; Margulis, George Y.; Hoke, Eric T.; Sellinger, Alan; McGehee, Michael D.; Bent, Stacey F.

    2012-01-01

    Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying

  4. Thermal stability of double-ceramic-layer thermal barrier coatings with various coating thickness

    International Nuclear Information System (INIS)

    Dai Hui; Zhong Xinghua; Li Jiayan; Zhang Yanfei; Meng Jian; Cao Xueqiang

    2006-01-01

    Double-ceramic-layer (DCL) coatings with various thickness ratios composed of YSZ (6-8 wt.% Y 2 O 3 + ZrO 2 ) and lanthanum zirconate (LZ, La 2 Zr 2 O 7 ) were produced by the atmospheric plasma spraying. Chemical stability of LZ in contact with YSZ in DCL coatings was investigated by calcining powder blends at different temperatures. No obvious reaction was observed when the calcination temperature was lower than 1250 deg. C, implying that LZ and YSZ had good chemical applicability for producing DCL coating. The thermal cycling test indicate that the cycling lives of the DCL coatings are strongly dependent on the thickness ratio of LZ and YSZ, and the coatings with YSZ thickness between 150 and 200 μm have even longer lives than the single-layer YSZ coating. When the YSZ layer is thinner than 100 μm, the DCL coatings failed in the LZ layer close to the interface of YSZ layer and LZ layer. For the coatings with the YSZ thickness above 150 μm, the failure mainly occurs at the interface of the YSZ layer and the bond coat

  5. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Yatskiv, Roman

    2013-01-01

    Roč. 28, č. 4 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

  6. Determination of radiolysis products in gamma-irradiated multilayer barrier food packaging films containing a middle layer of recycled LDPE

    International Nuclear Information System (INIS)

    Chytiri, Stavroula; Goulas, Antonios E.; Badeka, Anastasia; Riganakos, Kyriakos A.; Petridis, Dimitrios; Kontominas, Michael G.

    2008-01-01

    Volatile and non-volatile radiolysis products and sensory changes of five-layer food packaging films have been determined after gamma irradiation (5-60 kGy). Barrier films were based on polyamide (PA) and low-density polyethylene (LDPE). Each film contained a middle buried layer of recycled LDPE or 100% virgin LDPE (control samples). Data showed that a large number of radiolysis products were produced such as hydrocarbons, alcohols, carbonyl compounds, carboxylic acid. These compounds were detected in the food simulant after contact with all films even at the lower absorbed doses of 5 and 10 kGy. The type and concentration of radiolysis products increased progressively with radiation dose, while no new compounds were detected as a result of the presence of recycled LDPE. In addition, irradiation dose appears to influence the sensory properties of table water in contact with films

  7. Estimation of the barrier layer thickness in the Indian Ocean using Aquarius Salinity.

    Digital Repository Service at National Institute of Oceanography (India)

    Felton, C.S.; Subrahmanyam, B.; Murty, V.S.N; Shriver, J.F.

    , as well as the advantages and disadvantages of the current model are discussed. BLT estimations using HYCOM simulations display large errors that are related to model layer structure and the selected BLT methodology....

  8. Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

    Science.gov (United States)

    Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

    2013-01-01

    A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

  9. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

    Science.gov (United States)

    Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

    2013-01-01

    A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

  10. Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films

    International Nuclear Information System (INIS)

    Lipeles, R.A.; Leung, M.S.; Thiede, D.A.

    1990-01-01

    This paper reports on barium silicate and barium aluminate films that were studied for use as chemical reaction and diffusion barrier layers for Y 1 Ba 2 Cu 3 O 7-x (YBC) deposited on sapphire and fused silica substrates by the sol-gel technique. Depth profiling by secondary ion mass spectrometry (SIMS) was used to characterize the abruptness of the interfaces between the barrier layer and the YBC film as well as the barrier layer and the substrate. The authors found that barium aluminate films reacted with fused silica substrates forming a coarse-grained barium silicate phase. Barium silicate, BaSiO 3 , also reacted with silica substrates forming a broad, amorphous reaction zone containing some BaSi 2 O 5 . Although barium silicate and barium aluminate deposited on sapphire formed a BaAl 12 O 19 phase, they provided a barrier to barium diffusion from sol-gel deposited YBC. Crystalline barium aluminate grown on c-cut sapphire was the most effective barrier layer for the growth of YBC films; compositionally uniform YBC films were made similar to that grown on strontium titanate substrates. These data show that chemically stable, crystalline films are more effective barrier layers than amorphous films

  11. Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

    2013-12-02

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

  12. Graphene: Polymer composites as moisture barrier and charge transport layer toward solar cell applications

    Science.gov (United States)

    Sakorikar, Tushar; Kavitha, M. K.; Tong, Shi Wun; Vayalamkuzhi, Pramitha; Loh, Kian Ping; Jaiswal, Manu

    2018-05-01

    Graphene: polymer composite based electrically conducting films are realized by a facile solution processable method. Ultraviolet Photoelectron Spectroscopy (UPS) measurements on the composite films, reveal a low work function of reduced graphene oxide (rGO) obtained from hydrazine hydrate reduction of graphene oxide (GO). We suggest that the low work function could potentially make rGO: PMMA composite suitable for electron conducting layer in perovskite solar cells in place of traditionally used expensive PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) layer. Further, we demonstrate from the gravimetric experiments conducted on rGO: PMMA films, that the same coating is also resistant to moisture permeation. This latter property can be used to realize a protective coating layer for perovskite films, which are prone to moisture induced degradation. Thus, dual functionality of rGO-PMMA films is demonstrated towards integration with perovskite solar cells. Architecture of perovskite solar cell based on these concepts is proposed.

  13. Chemical vapor deposition of diamond onto iron based substrates. The use of barrier layers

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.

    1995-01-01

    When Fe is exposed to the plasma environment suitable for the chemical vapor deposition (CVD) of diamond, the surface is rapidly covered with a thick layer graphitic soot and C swiftly diffuses into the Fe substrate. Once the soot reaches a critical thickness, diamond films nucleate and grow on top of it. However, adhesion of the film to the substrate is poor due to the lack of structural integrity of the soot layer, A thin coating of TiN on the Fe can act to prevent diffusion and soot formation. Diamond readily grows upon the TiN via an a-C interface layer, but the a-C/TiN interface is weak and delamination occurs at this interface. In order to try and improve the adhesion, the use of a high dose Ti implant was investigated to replace the TiN coating. 7 refs., 6 figs

  14. Fabrication and characterization of a solid-state nanopore with self-aligned carbon nanoelectrodes for molecular detection

    International Nuclear Information System (INIS)

    Spinney, Patrick S; Collins, Scott D; Smith, Rosemary L; Howitt, David G

    2012-01-01

    Stochastic molecular sensors based on resistive pulse nanopore modalities are envisioned as facile DNA sequencers. However, recent advances in nanotechnology fabrication have highlighted promising alternative detection mechanisms with higher sensitivity and potential single-base resolution. In this paper we present the novel self-aligned fabrication of a solid-state nanopore device with integrated transverse graphene-like carbon nanoelectrodes for polyelectrolyte molecular detection. The electrochemical transduction mechanism is characterized and found to result primarily from thermionic emission between the two transverse electrodes. Response of the nanopore to Lambda dsDNA and short (16-mer) ssDNA is demonstrated and distinguished. (paper)

  15. Efficacy of In2S3 interfacial recombination barrier layer in PbS quantum-dot-sensitized solar cells

    International Nuclear Information System (INIS)

    Basit, Muhammad Abdul; Abbas, Muhammad Awais; Bang, Jin Ho; Park, Tae Joo

    2015-01-01

    In 2 S 3 interfacial recombination barrier layer (IBL) via successive ionic layer adsorption and reaction (SILAR) was successfully employed between PbS quantum dots and mesoporous TiO 2 in quantum-dot-sensitized solar cells (QDSSCs). In 2 S 3 IBL significantly increased the resistance against back electron transfer from TiO 2 , resulting an increment in the photocurrent density (J SC ) for the cell with single SILAR cycle of In 2 S 3 IBL. Further increase in the number of SILAR cycles of In 2 S 3 IBL deteriorated the J SC , whereas open-circuit voltage sustained the increasing trend. Therefore, an optimal photo-conversion efficiency of ∼2.2% was obtained for the cell with 2 SILAR cycles of In 2 S 3 IBL, which strategically reached a value of ∼2.70% after annealing (increased by 40% compared to the control cell without IBL). In 2 S 3 IBL not only improved the recombination resistance and electron life time of the cells, but it also enhanced the photostability of the cells. - Highlights: • In 2 S 3 interfacial recombination barrier layer was deposited on TiO 2 photoanode via SILAR process. • Resistance against back electron transfer from TiO 2 (recombination) increased notably. • Fabricated PbS-QDSSCs were characterized using IPCE, OCVD and EIS techniques. • In 2 S 3 IBL improved chemical capacitance, electron life time and photostability of modified cells. • 2In 2 S 3 IBL showed optimal performance, yielding 40% improvement in PCE after heat treatment.

  16. Self-aligned 0-level sealing of MEMS devices by a two layer thin film reflow process

    NARCIS (Netherlands)

    Rusu, C.R.; Jansen, Henricus V.; Gunn, R.; Witvrouw, A.

    2003-01-01

    Many micro electromechanical systems (MEMS) require a vacuum or controlled atmosphere encapsulation in order to ensure either a good performance or an acceptable lifetime of operation. Two approaches for wafer-scale zero-level packaging exist. The most popular approach is based on wafer bonding.

  17. Self-aligned 0-level sealing of MEMS devices by a two layer thin film reflow process

    NARCIS (Netherlands)

    Rusu, C.R.; Jansen, Henricus V.; Gunn, R.; Witvrouw, A.

    2004-01-01

    Many micro electromechanical systems (MEMS) require a vacuum or controlled atmosphere encapsulation in order to ensure either a good performance or an acceptable lifetime of operation. Two approaches for waferscale zero-level packaging exist. The most popular approach is based on wafer bonding.

  18. The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

    Science.gov (United States)

    Xing, Yao; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Liang, Feng; Liu, Shuangtao; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong

    2018-05-01

    In InGaN/GaN multi-quantum wells (MQWs), a low temperature cap (LT-cap) layer is grown between the InGaN well layer and low temperature GaN barrier layer. During the growth, a temperature ramp-up and ramp-down process is added between LT-cap and barrier layer growth. The effect of temperature ramp-up time duration on structural and optical properties of quantum wells is studied. It is found that as the ramp-up time increases, the Indium floating layer on the top of the well layer can be diminished effectively, leading to a better interface quality between well and barrier layers, and the carrier localization effect is enhanced, thereby the internal quantum efficiency (IQE) of QWs increases surprisingly. However, if the ramp-up time is too long, the carrier localization effect is weaker, which may increase the probabilities of carriers to meet with nonradiative recombination centers. Meanwhile, more nonradiative recombination centers will be introduced into well layers due to the indium evaporation. Both of them will lead to a reduction of internal quantum efficiency (IQE) of MQWs.

  19. Microstructure of Josephson junctions: Effect on supercurrent transport in YBCO grain boundary and barrier layer junctions

    International Nuclear Information System (INIS)

    Merkle, K.L.; Huang, Y.

    1998-01-01

    The electric transport of high-temperature superconductors, such as YBa 2 Cu 3 O 7-x (YBCO), can be strongly restricted by the presence of high-angle grain boundaries (GB). This weak-link behavior is governed by the macroscopic GB geometry and the microscopic grain boundary structure and composition at the atomic level. Whereas grain boundaries present a considerable impediment to high current applications of high T c materials, there is considerable commercial interest in exploiting the weak-link-nature of grain boundaries for the design of microelectronic devices, such as superconducting quantum interference devices (SQUIDs). The Josephson junctions which form the basis of this technology can also be formed by introducing artificial barriers into the superconductor. The authors have examined both types of Josephson junctions by EM techniques in an effort to understand the connection between microstructure/chemistry and electrical transport properties. This knowledge is a valuable resource for the design and production of improved devices

  20. A Comparative Study of the Monitoring of a Self Aligning Spherical Journal using Surface Vibration, Airborne Sound and Acoustic Emission

    International Nuclear Information System (INIS)

    Raharjo, P; Tesfa, B; Gu, F; Ball, A D

    2012-01-01

    A Self aligning spherical journal bearing is a plain bearing which has spherical surface contact that can be applied in high power industrial machinery. This type of bearing can accommodate a misalignment problem. The journal bearing faults degrade machine performance, decrease life time service and cause unexpected failure which are dangerous for safety issues. Non-intrusive measurements such as surface vibration (SV), airborne sound (AS) and acoustic emission (AE) measurement are appropriate monitoring methods for early stage journal bearing fault in low, medium and high frequency. This paper focuses on the performance comparison using SV, AS and AE measurements in monitoring a self aligning spherical journal bearing for normal and faulty (scratch) conditions. It examines the signals in the time domain and frequency domain and identifies the frequency ranges for each measurement in which significant changes are observed. The results of SV, AS and AE experiments indicate that the spectrum can be used to detect the differences between normal and faulty bearing. The statistic parameter shows that RMS value and peak value for faulty bearing is higher than normal bearing.

  1. * Calvarial Bone Regeneration Is Enhanced by Sequential Delivery of FGF-2 and BMP-2 from Layer-by-Layer Coatings with a Biomimetic Calcium Phosphate Barrier Layer.

    Science.gov (United States)

    Gronowicz, Gloria; Jacobs, Emily; Peng, Tao; Zhu, Li; Hurley, Marja; Kuhn, Liisa T

    2017-12-01

    A drug delivery coating for synthetic bone grafts has been developed to provide sequential delivery of multiple osteoinductive factors to better mimic aspects of the natural regenerative process. The coating is composed of a biomimetic calcium phosphate (bCaP) layer that is applied to a synthetic bone graft and then covered with a poly-l-Lysine/poly-l-Glutamic acid polyelectrolyte multilayer (PEM) film. Bone morphogenetic protein-2 (BMP-2) was applied before the coating process directly on the synthetic bone graft and then, bCaP-PEM was deposited followed by adsorption of fibroblast growth factor-2 (FGF-2) into the PEM layer. Cells access the FGF-2 immediately, while the bCaP-PEM temporally delays the cell access to BMP-2. In vitro studies with cells derived from mouse calvarial bones demonstrated that Sca-1 and CD-166 positive osteoblast progenitor cells proliferated in response to media dosing with FGF-2. Coated scaffolds with BMP-2 and FGF-2 were implanted in mouse calvarial bone defects and harvested at 1 and 3 weeks. After 1 week in vivo, proliferation of cells, including Sca-1+ progenitors, was observed with low dose FGF-2 and BMP-2 compared to BMP-2 alone, indicating that in vivo delivery of FGF-2 activated a similar population of cells as shown by in vitro testing. At 3 weeks, FGF-2 and BMP-2 delivery increased bone formation more than BMP-2 alone, particularly in the center of the defect, confirming that the proliferation of the Sca-1 positive osteoprogenitors by FGF-2 was associated with increased bone healing. Areas of bone mineralization were positive for double fluorochrome labeling of calcium and alkaline phosphatase staining of osteoblasts, along with increased TRAP+ osteoclasts, demonstrating active bone formation distinct from the bone-like collagen/hydroxyapatite scaffold. In conclusion, the addition of a bCaP layer to PEM delayed access to BMP-2 and allowed the FGF-2 stimulated progenitors to populate the scaffold before differentiating in

  2. Thermal barrier coatings with a double-layer bond coat on Ni{sub 3}Al based single-crystal superalloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Xu, Zhenhua; Mu, Rende [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He, Limin, E-mail: he_limin@yahoo.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Huang, Guanghong [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao, Xueqiang, E-mail: xcao@ciac.ac.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2014-04-05

    Highlights: • Thermal barrier coatings with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi. • Good adherence at all interfaces within TBC system. • The underlying (Ni,Pt)Al layer can supply abundant Al content for the upper NiCrAlYSi layer. • Crack nucleation, propagation and coalescence lead to the failure of coating. -- Abstract: Electron-beam physical vapor deposited thermal barrier coatings (TBCs) with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi were prepared on a Ni{sub 3}Al based single-crystal superalloy. Phase and cross-sectional microstructure of the developed coatings were studied by using X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The experimental results show good adherence at all interfaces within this system. Furthermore, oxidation resistance and elements interdiffusion behavior of the double-layer bond coat were also investigated. The double-layer bond coat system exhibits a better scale adherence than the single layer bond coat systems since the underlying (Ni,Pt)Al layer can supply abundant Al for the upper NiCrAlYSi layer. Finally, thermal cycling behavior of the double-layer bond coat TBC was evaluated and the failure mechanism was discussed. Crack nucleation, propagation and coalescence caused by TGO growth stress and the thermal expansion mismatch stress between TGO and bond coat can be mainly responsible for the spallation of this coating.

  3. Study of the Boom clay layer as a geochemical barrier for long-lived radionuclides

    International Nuclear Information System (INIS)

    Baetsle, L.H.; Henrion, P.; Put, M.; Cremers, A.

    1985-01-01

    The Boom clay layer below the nuclear site of Mol, Belgium has been thoroughly investigated on its geohydrologic and physicochemical characteristics as well as by laboratory experiments and in situ tests in the underground laboratory. Hydraulic permeabilities have been measured in situ; the chemical composition of the interstitial clay water is related to the mineralogical composition. Radionuclide sorption data and sorption mechanisms are given for Cs, Sr, Eu, Tc, Am, Pu and Np; experimental diffusion coefficients were determined by clay plug migration tests in representative conditions. Results of model calculations for the migration of radionuclides in dense porous media are given for Cs, Sr, Pu and Np

  4. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

    International Nuclear Information System (INIS)

    Zhukov, A. E.; Asryan, L. V.; Semenova, E. S.; Zubov, F. I.; Kryzhanovskaya, N. V.; Maximov, M. V.

    2015-01-01

    Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In 0.232 Al 0.594 Ga 0.174 As/Al 0.355 Ga 0.645 As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution

  5. Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

    Science.gov (United States)

    Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

    2017-10-25

    Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

  6. A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

    Science.gov (United States)

    Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

    2017-11-01

    In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

  7. Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

    International Nuclear Information System (INIS)

    Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

    2008-01-01

    MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

  8. Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

    International Nuclear Information System (INIS)

    Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

    2007-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

  9. Change of the work function and potential barrier transparency of W(100) and GaAs(110) single crystals during removing the inherent surface oxide layer

    International Nuclear Information System (INIS)

    Asalkhanov, Yu.I.; Saneev, Eh.L.

    2002-01-01

    Changes of current voltage characteristics of slow monoenergetic electron beam through the surfaces of W(100) and GaAs(100) single crystals have been measured in the process of surface oxide layers elimination. It is shown that work function is decreased and transparency coefficient of surface potential barrier is increased under increasing the temperature of vacuum annealing. Peculiarities of surface potential change under oxide layer elimination in metals and semiconductors are discussed [ru

  10. Heterogeneous reactions of dioctahedral smectites in illite-smectite and kaolinite-smectite mixed-layers: applications to clay materials for engineered barriers

    International Nuclear Information System (INIS)

    Meunier, A.; Proust, D.; Beaufort, D.; Lajudie, A.; Petit, J.-C.

    1992-01-01

    The clay materials selected for use in the engineered barriers of the French nuclear waste isolation programme are mainly composed of dioctahedral smectite, either bentonite of Wyoming type or kaolinite-smectites most often consist of randomly stacked layers with low and high charges. In the case of the Wyoming-type bentonite, these two differently charged layers do not react in the same way when subjected to hydrothermal alteration. Overall, the low-charge smectite layers react to form high-charge smectite layers + quartz + kaolinite. Then, fixing K ions, the high-charge smectite layers are transformed into illite-smectite mixed-layers (I/S) when the temperature conditions increase. A symmetrical process is observed in natural or experimental hydrothermal conditions when the high-charge smectite layers of I/S minerals react with quartz and/or kaolinite to produce low-charge smectite layers. The chemical properties of the bentonite-engineered barriers clearly depend on the low charge/high charge smectite layer proportion, which is in turn controlled by the temperature-dependent reactions in the vicinity of the waste disposal. Although there are fewer published data on the kaolinite-smectite mixed-layered minerals (K/S), a similar low charge-high charge reaction appears to affect their smectite component. The experimental alteration of K/S leads to the formation of a low-charge beidellite with an increase in the cation-exchange capacity and in the expandability of the clay material. Thus, the properties of the engineered barrier seems to be improved after hydrothermal alteration. (Author)

  11. Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

    Science.gov (United States)

    Tari, Alireza; Wong, William S.

    2018-02-01

    Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

  12. Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process

    International Nuclear Information System (INIS)

    Kamineni, V. K.; Bersch, E. J.; Diebold, A. C.; Raymond, M.; Doris, B. B.

    2010-01-01

    The thickness-dependent optical properties of nickel metal and nickel monosilicide (NiSi) thin films, used for self-aligned silicidation process, were characterized using spectroscopic ellipsometry. The thickness-dependent complex dielectric function of nickel metal films is shown to be correlated with the change in Drude free electron relaxation time. The change in relaxation time can be traced to the change in grain boundary (GB) reflection coefficient and grain size. A resistivity based model was used as the complementary method to the thickness-dependent optical model to trace the change in GB reflection coefficient and grain size. After silicidation, the complex dielectric function of NiSi films exhibit non-Drude behavior due to superimposition of interband absorptions arising at lower frequencies. The Optical models of the complete film stack were refined using x-ray photoelectron spectroscopy, Rutherford backscattered spectroscopy, and x-ray reflectivity (XRR).

  13. Densification of Ce0.9Gd0.1O1.95 barrier layer by in-situ solid state reaction

    DEFF Research Database (Denmark)

    Ni, De Wei; Esposito, Vincenzo

    2014-01-01

    A novel methodology, called in-situ solid state reaction (SSR), is developed and achieved for the densification of gadolinia doped ceria (CGO) barrier layer (BL) within the solid oxide fuel cell (SOFC) technology. The method is based on the combined use of impregnation technique and a designed two...

  14. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

    Science.gov (United States)

    Mahato, Somnath; Puigdollers, Joaquim

    2018-02-01

    Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

  15. Fabrication of High Gas Barrier Epoxy Nanocomposites: An Approach Based on Layered Silicate Functionalized by a Compatible and Reactive Modifier of Epoxy-Diamine Adduct

    Directory of Open Access Journals (Sweden)

    Ran Wei

    2018-05-01

    Full Text Available To solve the drawbacks of poor dispersion and weak interface in gas barrier nanocomposites, a novel epoxy-diamine adduct (DDA was synthesized by reacting epoxy monomer DGEBA with curing agent D400 to functionalize montmorillonite (MMT, which could provide complete compatibility and reactivity with a DGEBA/D400 epoxy matrix. Thereafter, sodium type montmorillonite (Na-MMT and organic-MMTs functionalized by DDA and polyether amines were incorporated with epoxy to manufacture nanocomposites. The effects of MMT functionalization on the morphology and gas barrier property of nanocomposites were evaluated. The results showed that DDA was successfully synthesized, terminating with epoxy and amine groups. By simulating the small-angle neutron scattering data with a sandwich structure model, the optimal dispersion/exfoliation of MMT was observed in a DDA-MMT/DGEBA nanocomposite with a mean radius of 751 Å, a layer thickness of 30.8 Å, and only two layers in each tactoid. Moreover, the DDA-MMT/DGEBA nanocomposite exhibited the best N2 barrier properties, which were about five times those of neat epoxy. Based on a modified Nielsen model, it was clarified that this excellent gas barrier property was due to the homogeneously dispersed lamellas with almost exfoliated structures. The improved morphology and barrier property confirmed the superiority of the adduct, which provides a general method for developing gas barrier nanocomposites.

  16. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

    Science.gov (United States)

    Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

    2018-02-01

    To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

  17. Photovoltaic performance of bithiazole-bridged dyes-sensitized solar cells employing semiconducting quantum dot CuInS2 as barrier layer material.

    Science.gov (United States)

    Guo, Fuling; He, Jinxiang; Li, Jing; Wu, Wenjun; Hang, Yandi; Hua, Jianli

    2013-10-15

    In this work, the quantum dot CuInS2 layer was deposited on TiO2 film using successive ionic layer absorption and reaction (SILAR) method, and then two bithiazole-bridged dyes (BTF and BTB) were sensitized on the CuInS2/TiO2 films to form dye/CuInS2/TiO2 photoanodes for DSSCs. It was found that the quantum dots CuInS2 as an energy barrier layer not only could effectively improve open-circuit voltage (Voc) of solar cell, but also increase short-circuit photocurrent (Jsc) compared to the large decrease in Jsc of ZnO as energy barrier layer. The electrochemical impedance spectroscopy (EIS) measurement showed that the CuInS2 formed a barrier layer to suppress the recombination from injection electron to the electrolyte and improve open-circuit voltage. Finally, the open-circuit voltage increased about 22 and 27mV for BTF and BTB-/CuInS2/TiO2-based cells, the overall conversion efficiencies also reached to 7.20% and 6.74%, respectively. Copyright © 2013 Elsevier Inc. All rights reserved.

  18. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

    KAUST Repository

    Brennan, Thomas P.

    2012-01-01

    Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO 2 active layer and the HTM spiro-OMeTAD. The impact of Al 2O 3 barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl 4 surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al 2O 3 deposition. However, only when the TiCl 4 treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al 2O 3 ALD and the TiCl 4 surface treatment whereas the insulating properties of Al 2O 3 hinder charge injection and lead to current loss in TiCl 4-treated devices. The impact of Al 2O 3 barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al 2O 3 growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems. © This journal is the Owner Societies 2012.

  19. Formation of edge transport barrier in the ergodic field layer of helical divertor configuration on the Large Helical Device

    International Nuclear Information System (INIS)

    Toi, K; Ohdachi, S; Watanabe, F; Narihara, K; Morisaki, T; Sakakibara, S; Morita, S; Goto, M; Ida, K; Masuzaki, S; Miyazawa, K; Tanaka, K; Tokuzawa, T; Watanabe, K W; Yoshinuma, M

    2006-01-01

    On the Large Helical Device (LHD), low to high confinement (L-H) transition and edge transport barrier (ETB) formation were observed in the low beta regime ((β dia ) dia ): volume-averaged beta derived from diamagnetic measurement) as well as in relatively high beta regime (>1.5%). In most of ETB plasmas electron density preferentially increases in the edge region without a substantial rise of the edge electron temperature. The ETB zone develops inside the ergodic field layer calculated in the vacuum field. The ETB formation strongly destabilizes edge coherent modes such as m/n = 2/3 or 1/2 (m, n: poloidal and toroidal mode numbers), because the plasma edge region is in the magnetic hill. The ETB is partially destroyed by the combination of these edge MHD modes and ELM-like activities. For a particular experimental condition, the forced generation of a sizable m/n = 1/1 magnetic island near the edge by application of external field perturbations facilitates the L-H transition at a lower electron density and suppresses edge MHD modes and ELM-like activities to lower levels

  20. Role of wind forcing and eddy activity in the intraseasonal variability of the barrier layer in the South China Sea

    Science.gov (United States)

    Liang, Zhanlin; Xie, Qiang; Zeng, Lili; Wang, Dongxiao

    2018-03-01

    In addition to widely discussed seasonal variability, the barrier layer (BL) of the South China Sea (SCS) also exhibits significant intraseasonal variability (ISV) and plays an important role in the upper heat and salt balances. The characteristics and mechanisms of spatiotemporal variations in the BL are investigated using an eddy-resolving ocean model OFES (OGCM For the Earth Simulator) ouput and related atmospheric and oceanic processes. The active intraseasonal BL variability in the SCS occurs mainly during the late summer/autumn and winter and exhibits remarkable differences between these two periods. The BL ISV in late summer/autumn occurs in the southern basin, while in winter, it is limited to the northwestern basin. To further discuss the evolution and driving thermodynamic mechanisms, we quantify the processes that control the variability of intraseasonal BL. Different mechanisms for the intraseasonal BL variability for these two active periods are investigated based on the case study and composite analysis. During late summer/autumn, the active BL in the southern basin is generated by advected and local freshwater, and then decays rapidly with the enhanced wind. In winter, anticyclonic eddy activity is associated with the evolution of the BL by affecting the thermocline and halocline variations, while wind stress and wind stress curl have no obvious influence on BL.

  1. Quantum dots transparent display (QDs-TPD) using a liquid QDs layer and N2 barrier discharge

    Science.gov (United States)

    Kim, Hong Tak; Lee, Sung-Youp; Sohn, Sang Ho

    2017-07-01

    Quantum dots transparent display (QDs-TPD) was realized using a liquid QDs layer and N2 barrier discharge panel. In the N2 discharge, the 2nd+ lines of N2 in the range of 300 - 400 nm (C3Πu - B3Πg), and the 1st- lines of N2+ at 391.4 and 427.8 nm (B2Σu+ - X2 Σg+) were mainly observed, while the visible emission lines were rarely observed. This implies the N2 discharge is suitable for the excitation source of the QDs, due to the strong ultra-violet radiations and the weak visible emissions. The emission centers for red, green, and blue color in QDs-TPD were positioned at 452, 540, and 638 nm, respectively, and the N2 emission peaks were seldom observed in the visible region. The transmittance of QDs-TPD was approximately 40% in the visible region and the luminescence was about 70 cd/m2. The CIE (x, y) coordinates of red, green, and blue colors were (0.670, 0.309), (0.378, 0.640), and (0.183, 0.118), respectively, and the color gamut was 71% of a NTSC standard. Thus, the QDs-TPD is expected as a way for realizing the TPD, due to its good transparency, excellent visibility, wide viewing-angle, aesthetical design, low cost production, and good scalability to large sizes.

  2. The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-κ dielectric materials

    International Nuclear Information System (INIS)

    McCoy, A P; Bogan, J; Walsh, L; Byrne, C; O’Connor, R; Hughes, G; Woicik, J C

    2015-01-01

    This work investigates the impact of porosity in low-κ dielectric materials on the chemical and structural properties of deposited Mn thin films for copper diffusion barrier layer applications. X-ray photoelectron spectrscopy (XPS) results highlight the difficulty in distinguishing between the various Mn oxidation states which form at the interlayer dielectric (ILD)/Mn interface. The presence of MnSiO 3 and MnO were identified using x-ray absorption spectroscopy (XAS) measurements on both porous and non-porous dielectric materials with evidence of Mn 2 O 3 and Mn 3 O 4 in the deposited film on the latter surface. It is shown that a higher proportion of deposited Mn converts to Mn silicate on an ILD film which has 50% porosity compared with the same dielectric material with no porosity, which is attributed to an enhanced chemical interaction with the effective larger surface area of porous dielectric materials. Transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDX) data shows that the Mn overlayer remains predominately surface localised on both porous and non-porous materials. (paper)

  3. Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Shenghui, Lu; Jiangfeng, Du; Qian, Luo; Qi, Yu; Wei, Zhou; Jianxin, Xia; Mohua, Yang, E-mail: lushenghui@sohu.co [State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    An analytical charge control model considering the insulator/AlGaN interface charge and undepleted Al-GaN barrier layer is presented for AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) over the entire operation range of gate voltage. The whole process of charge control is analyzed in detail and partitioned into four regions: I-full depletion, II-partial depletion, III-neutral region and IV-electron accumulation at the insulator/AlGaN interface. The results show that two-dimensional electron gas (2DEG) saturates at the boundary of region II/III and the gate voltage should not exceed the 2DEG saturation voltage in order to keep the channel in control. In addition, the span of region II accounts for about 50% of the range of gate voltage before 2DEG saturates. The good agreement of the calculated transfer characteristic with the measured data confirms the validity of the proposed model. (semiconductor devices)

  4. Paper S12 5 : Self-aligned a-IGZO TFTs : Impact of S/D contacts formation on their Negative-Bias-Illumination-Stress (NBIS) instability

    NARCIS (Netherlands)

    Nag, M.; Steudel, S.; Smout, S.; Bhoolokam, A.; Genoe, J.; Cobb, B.; Kumar, A.; Groeseneken, G.; Heremans, P.

    2015-01-01

    In this work, we present the impact of S/D contact formation, that is, by SiN plasma doping (hydrogen incorporation), metallic reduction (by calcium) and by argon plasma (compositional change) on NBIS instabilities of self-aligned a-IGZO TFTs.

  5. Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities

    NARCIS (Netherlands)

    Nag, M.; Steudel, S.; Smout, S.; Bhoolokam, A.; Genoe, J.; Cobb, B.; Kumar, A.; Groeseneken, G.; Heremans, P.

    2015-01-01

    In this study, we have compared the performance of self-aligned a-IGZO thin-film transistors (TFTs) whereby the source/drain (S/D) region's conductivity enhanced in three different ways, that is, using SiNx interlayer plasma (hydrogen diffusion), using calcium (Ca as reducing metal) and using argon

  6. Yttria-stabilized zirkonia / gadolinium zirconate double-layer plasma-sprayed thermal barrier coating systems (TBCs)

    Energy Technology Data Exchange (ETDEWEB)

    Bakan, Emine

    2015-07-01

    Thermal barrier coating (TBC) research and development is driven by the desirability of further increasing the maximum inlet temperature in a gas turbine engine. A number of new top coat ceramic materials have been proposed during the last decades due to limited temperature capability (1200 C) of the state-of-the-art yttria-stabilized zirconia (7 wt. % Y{sub 2}O{sub 3}-ZrO{sub 2}, YSZ) at long term operation. Zirconate pyrochlores of the large lanthanides((Gd → La){sub 2}Zr{sub 2}O{sub 7}) have been particularly attractive due to their higher temperature phase stability than that of the YSZ. Nonetheless, the issues related with the implementation of pyrochlores such as low fracture toughness and formation of deleterious interphases with thermally grown oxide (TGO, Al{sub 2}O{sub 3}) were reported. The implication was the requirement of an interlayer between the pyrochlores and TGO, which introduced double-layer systems to the TBC literature. Furthermore, processability issues of pyrochlores associated with the different evaporation rates of lanthanide oxides and zirconia resulting in unfavorable composition variations in the coatings were addressed in different studies. After all, although the material properties are available, there is a paucity of data in the literature concerning the properties of the coatings made of pyrochlores. From the processability point of view the most reported pyrochlore is La{sub 2}Zr{sub 2}O{sub 7}. Hence, the goal of this research was to investigate plasma-sprayed Gd{sub 2}Zr{sub 2}O{sub 7} (GZO) coatings and YSZ/GZO double-layer TBC systems. Three main topics were examined based on processing, performance and properties: (i) the plasma spray processing of the GZO and its impact on the microstructural and compositional properties of the GZO coatings; (ii) the cycling lifetime of the YSZ/GZO double-layer systems under thermal gradient at a surface temperature of 1400 C; (iii) the properties of the GZO and YSZ coatings such as

  7. Yttria-stabilized zirkonia / gadolinium zirconate double-layer plasma-sprayed thermal barrier coating systems (TBCs)

    International Nuclear Information System (INIS)

    Bakan, Emine

    2015-01-01

    Thermal barrier coating (TBC) research and development is driven by the desirability of further increasing the maximum inlet temperature in a gas turbine engine. A number of new top coat ceramic materials have been proposed during the last decades due to limited temperature capability (1200 C) of the state-of-the-art yttria-stabilized zirconia (7 wt. % Y 2 O 3 -ZrO 2 , YSZ) at long term operation. Zirconate pyrochlores of the large lanthanides((Gd → La) 2 Zr 2 O 7 ) have been particularly attractive due to their higher temperature phase stability than that of the YSZ. Nonetheless, the issues related with the implementation of pyrochlores such as low fracture toughness and formation of deleterious interphases with thermally grown oxide (TGO, Al 2 O 3 ) were reported. The implication was the requirement of an interlayer between the pyrochlores and TGO, which introduced double-layer systems to the TBC literature. Furthermore, processability issues of pyrochlores associated with the different evaporation rates of lanthanide oxides and zirconia resulting in unfavorable composition variations in the coatings were addressed in different studies. After all, although the material properties are available, there is a paucity of data in the literature concerning the properties of the coatings made of pyrochlores. From the processability point of view the most reported pyrochlore is La 2 Zr 2 O 7 . Hence, the goal of this research was to investigate plasma-sprayed Gd 2 Zr 2 O 7 (GZO) coatings and YSZ/GZO double-layer TBC systems. Three main topics were examined based on processing, performance and properties: (i) the plasma spray processing of the GZO and its impact on the microstructural and compositional properties of the GZO coatings; (ii) the cycling lifetime of the YSZ/GZO double-layer systems under thermal gradient at a surface temperature of 1400 C; (iii) the properties of the GZO and YSZ coatings such as thermal conductivity, coefficient of thermal expansion as well

  8. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

    International Nuclear Information System (INIS)

    Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

    2015-01-01

    An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

  9. Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Lin Zhao-Jun; Zhang Yu; Meng Ling-Guo; Cao Zhi-Fang; Luan Chong-Biao; Chen Hong; Wang Zhan-Guo

    2011-01-01

    Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N 2 ambience at 600 °C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 °C, 600 °C, 700 °C, and 800 °C). With the measured current—voltage (I—V) and capacitance—voltage (C—V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 °C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 °C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2014-07-23

    Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

  11. Multilayer moisture barrier

    Science.gov (United States)

    Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

    2015-04-21

    A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

  12. Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, H.; Detavenier, C.; Straten, O. van der; Rossnagel, S.M.; Kellock, A.J.; Park, D.-G.

    2005-01-01

    TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaN x thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl 5

  13. Built-in potential shift and Schottky-barrier narrowing in organic solar cells with UV-sensitive electron transport layers.

    Science.gov (United States)

    Li, Cheng; Credgington, Dan; Ko, Doo-Hyun; Rong, Zhuxia; Wang, Jianpu; Greenham, Neil C

    2014-06-28

    The performance of organic solar cells incorporating solution-processed titanium suboxide (TiOx) as electron-collecting layers can be improved by UV illumination. We study the mechanism of this improvement using electrical measurements and electroabsorption spectroscopy. We propose a model in which UV illumination modifies the effective work function of the oxide layer through a significant increase in its free electron density. This leads to a dramatic improvement in device power conversion efficiency through several mechanisms - increasing the built-in potential by 0.3 V, increasing the conductivity of the TiOx layer and narrowing the interfacial Schottky barrier between the suboxide and the underlying transparent electrode. This work highlights the importance of considering Fermi-level equilibration when designing multi-layer transparent electrodes.

  14. Self-aligning exoskeleton hip joint: Kinematic design with five revolute, three prismatic and one ball joint.

    Science.gov (United States)

    Beil, Jonas; Marquardt, Charlotte; Asfour, Tamim

    2017-07-01

    Kinematic compatibility is of paramount importance in wearable robotic and exoskeleton design. Misalignments between exoskeletons and anatomical joints of the human body result in interaction forces which make wearing the exoskeleton uncomfortable and even dangerous for the human. In this paper we present a kinematically compatible design of an exoskeleton hip to reduce kinematic incompatibilities, so called macro- and micro-misalignments, between the human's and exoskeleton's joint axes, which are caused by inter-subject variability and articulation. The resulting design consists of five revolute, three prismatic and one ball joint. Design parameters such as range of motion and joint velocities are calculated based on the analysis of human motion data acquired by motion capture systems. We show that the resulting design is capable of self-aligning to the human hip joint in all three anatomical planes during operation and can be adapted along the dorsoventral and mediolateral axis prior to operation. Calculation of the forward kinematics and FEM-simulation considering kinematic and musculoskeletal constraints proved sufficient mobility and stiffness of the system regarding the range of motion, angular velocity and torque admissibility needed to provide 50 % assistance for an 80 kg person.

  15. Design, manufacture and spin test of high contact ratio helicopter transmission utilizing Self-Aligning Bearingless Planetary (SABP)

    Science.gov (United States)

    Folenta, Dezi; Lebo, William

    1988-01-01

    A 450 hp high ratio Self-Aligning Bearingless Planetary (SABP) for a helicopter application was designed, manufactured, and spin tested under NASA contract NAS3-24539. The objective of the program was to conduct research and development work on a high contact ratio helical gear SABP to reduce weight and noise and to improve efficiency. The results accomplished include the design, manufacturing, and no-load spin testing of two prototype helicopter transmissions, rated at 450 hp with an input speed of 35,000 rpm and an output speed of 350 rpm. The weight power density ratio of these gear units is 0.33 lb hp. The measured airborne noise at 35,000 rpm input speed and light load is 94 dB at 5 ft. The high speed, high contact ratio SABP transmission appears to be significantly lighter and quieter than comtemporary helicopter transmissions. The concept of the SABP is applicable not only to high ratio helicopter type transmissions but also to other rotorcraft and aircraft propulsion systems.

  16. Ultra-fine structures of Pd-Ag-HAp nanoparticle deposition on protruded TiO2 barrier layer for dental implant

    Science.gov (United States)

    Jang, Jae-Myung; Kim, Seung-Dai; Park, Tae-Eon; Choe, Han-Cheol

    2018-02-01

    The biocompatibility structure of an implant surface is of great importance to the formation of new bone tissue around the dental implant and also has a significant chemical reaction in the osseointegration process. Thus, ultra-fine Pd-Ag-HAp nanoparticles have been electrodeposited on protruded TiO2 barrier layer in mixed electrolyte solutions. Unusual protrusions patterns, which are assigned to Pd-Ag-HAp nanoparticles, can be clearly differentiated from a TiO2 nanotube oxide layer formed by an anodizing process. In the chemical bonding state, the surface characteristics of Pd/Ag/HAp compounds have been investigated by FE-SEM, EDS mapping analysis, and XPS analysis. The mapping dots of the elements including Ti, Ca, Pd, Ag, and P showed a homogeneous distribution throughout the entire surface when deposited onto the protruded TiO2 barrier layer. The XPS spectra of Ti-2p, O-1S, Pd-3d, and Ag-3d have been investigated, with the major XPS peak indicating Pd-3d. The Ag-3d level was clearly observed with further scanning of the Ca-2p region. Based on the results of the chemical states, the structural properties of the protrusion patterns were also examined after being deposited onto the barrier oxide film, resulting in the representative protrusion patterns being mainly composed of Pd-Ag-HAp compounds. The results of the soaking evaluation showed that the protrusion patterns and the protruded TiO2 barrier layer were all effective in regards to biocompatibility.

  17. Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

    Science.gov (United States)

    Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

    2018-04-01

    The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

  18. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    International Nuclear Information System (INIS)

    Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

    2015-01-01

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

  19. Chitosan-Sodium Phytate Films with a Strong Water Barrier and Antimicrobial Properties Produced via One-Step-Consecutive-Stripping and Layer-by-Layer-Casting Technologies.

    Science.gov (United States)

    Yang, Jie; Xiong, Liu; Li, Man; Sun, Qingjie

    2018-06-20

    The pursuit of sustainable functional materials requires the development of materials based on renewable resources and efficient fabrication methods. Here, we first fabricated chitosan-sodium phytate films via one-step-stripping and layer-by-layer-casting technologies. The proposed film-fabrication methods are general, facile, environmentally benign, cost-effective, and easy to scale up. The resultant one-step-stripped film was thin (9 ± 1 μm), soft, transparent, and strong, whereas the thickness of the layer-by-layer-cast film was 70 ± 3 μm. FTIR analysis of the films indicated the formation of interactions between the phosphoric groups in sodium phytate and the amino groups in chitosan. More importantly, the water-vapor-permeability values of the one-step-stripped and cast films were 4-5 orders of magnitude lower than chitosan films reported before. Layer-by-layer-cast films in particular exhibited high tensile strength (49.21 ± 1.12 MPa) and were more than three times stronger than other polyelectrolyte multilayer films. Both types of films remained stable in an acidic environment. Furthermore, the layer-by-layer-assembled films presented greater antimicrobial activity than the stripped films. The developed chitosan-sodium phytate films can enhance several biomedical and environmental applications, such as packaging, drug delivery, diagnostics, microfluidics, and biosensing.

  20. Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jun Beom; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si 712-749 (Korea, Republic of); Han, Won Seok [UP Chemical 576, Chilgoedong, Pyeongtaek-si, Gyeonggi-do 459-050 (Korea, Republic of); Lee, Do-Joong [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2016-07-15

    Tungsten carbides (WC{sub x}) thin films were deposited on thermally grown SiO{sub 2} substrates by atomic layer deposition (ALD) using a fluorine- and nitrogen-free W metallorganic precursor, tungsten tris(3-hexyne) carbonyl [W(CO)(CH{sub 3}CH{sub 2}C ≡ CCH{sub 2}CH{sub 3}){sub 3}], and N{sub 2} + H{sub 2} plasma as the reactant at deposition temperatures between 150 and 350 °C. The present ALD-WC{sub x} system showed an ALD temperature window between 200 and 250 °C, where the growth rate was independent of the deposition temperature. Typical ALD characteristics, such as self-limited film growth and a linear dependency of the film grown on the number of ALD cycles, were observed, with a growth rate of 0.052 nm/cycle at a deposition temperature of 250 °C. The ALD-WC{sub x} films formed a nanocrystalline structure with grains, ∼2 nm in size, which consisted of hexagonal W{sub 2}C, WC, and nonstoichiometric cubic β-WC{sub 1−x} phase. Under typical deposition conditions at 250 °C, an ALD-WC{sub x} film with a resistivity of ∼510 μΩ cm was deposited and the resistivity of the ALD-WC{sub x} film could be reduced even further to ∼285 μΩ cm by further optimizing the reactant pulsing conditions, such as the plasma power. The step coverage of ALD-WC{sub x} film was ∼80% on very small sized and dual trenched structures (bottom width of 15 nm and aspect ratio of ∼6.3). From ultraviolet photoelectron spectroscopy, the work function of the ALD-WC{sub x} film was determined to be 4.63 eV. Finally, the ultrathin (∼5 nm) ALD-WC{sub x} film blocked the diffusion of Cu, even up to 600 °C, which makes it a promising a diffusion barrier material for Cu interconnects.

  1. Radiolysis products and sensory properties of electron-beam-irradiated high-barrier food-packaging films containing a buried layer of recycled low-density polyethylene.

    Science.gov (United States)

    Chytiri, S D; Badeka, A V; Riganakos, K A; Kontominas, M G

    2010-04-01

    The aim was to study the effect of electron-beam irradiation on the production of radiolysis products and sensory changes in experimental high-barrier packaging films composed of polyamide (PA), ethylene-vinyl alcohol (EVOH) and low-density polyethylene (LDPE). Films contained a middle buried layer of recycled LDPE, while films containing 100% virgin LDPE as the middle buried layer were taken as controls. Irradiation doses ranged between zero and 60 kGy. Generally, a large number of radiolysis products were produced during electron-beam irradiation, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food 'cold pasteurization'). The quantity of radiolysis products increased with irradiation dose. There were no significant differences in radiolysis products identified between samples containing a recycled layer of LDPE and those containing virgin LDPE (all absorbed doses), indicating the 'functional barrier' properties of external virgin polymer layers. Sensory properties (mainly taste) of potable water were affected after contact with irradiated as low as 5 kGy packaging films. This effect increased with increasing irradiation dose.

  2. Microstructure of edge-type Josephson junctions with PrBa[sub 2]Cu[sub 3]O[sub 7-x] barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, O I; Vasiliev, A L; Kiselev, N A [Inst. of Crystallography, Russian Academy of Sciences, Moscow (Russia); Mazo, L A; Gaponov, S V; Paveliev, D G; Strikovsky, M D [Inst. of Applied Physics, Russian Academy of Sciences, Novgorod (Russia)

    1992-08-01

    HREM investigations of edge Josephson junctions (EJJ) with PrBa[sub 2]Cu[sub 3]O[sub 7-x] barrier layer (PB) were performed. All layers (superconducting YBa[sub 2]Cu[sub 3]O[sub 7-x]) (Y1) and (Y2), insulating PrBa[sub 2]Cu[sub 3]O[sub 7-x] (PI) and barrier (PB) were obtained by laser ablation. The edges were formed by ion sputtering using a fotoresist mask. EJJ shows Josephson conductivity at Tc=77 K, giving j[sub c]=10[sup 4] A/cm[sup 2] at U[sub c]=50 [mu]V. Cross-sectional images show that Y1, PI and PB layers are single crystalline with the c-axis normal to the substrate surface. The Y2 layer in the regions of a multilayered structure is polycrystalline. The PB/Y1 interface is characterised by APB line boundaries; it is inclined to the substrate by 20-35deg. (orig.).

  3. Combined effect of capillary barrier and layered slope on water, solute and nanoparticle transfer in an unsaturated soil at lysimeter scale.

    Science.gov (United States)

    Prédélus, Dieuseul; Coutinho, Artur Paiva; Lassabatere, Laurent; Bien, Le Binh; Winiarski, Thierry; Angulo-Jaramillo, Rafael

    2015-10-01

    It is well recognized that colloidal nanoparticles are highly mobile in soils and can facilitate the transport of contaminants through the vadose zone. This work presents the combined effect of the capillary barrier and soil layer slope on the transport of water, bromide and nanoparticles through an unsaturated soil. Experiments were performed in a lysimeter (1×1×1.6m(3)) called LUGH (Lysimeter for Urban Groundwater Hydrology). The LUGH has 15 outputs that identify the temporal and spatial evolution of water flow, solute flux and nanoparticles in relation to the soil surface conditions and the 3D system configuration. Two different soil structures were set up in the lysimeter. The first structure comprises a layer of sand (0-0.2cm, in diameter) 35cm thick placed horizontally above a layer of bimodal mixture also 35cm thick to create a capillary barrier at the interface between the sand and bimodal material. The bimodal material is composed of a mixture 50% by weight of sand and gravel (0.4-1.1cm, in diameter). The second structure, using the same amount of sand and bimodal mixture as the first structure represents an interface with a 25% slope. A 3D numerical model based on Richards equation for flow and the convection dispersion equations coupled with a mechanical module for nanoparticle trapping was developed. The results showed that under the effect of the capillary barrier, water accumulated at the interface of the two materials. The sloped structure deflects flow in contrast to the structure with zero slope. Approximately 80% of nanoparticles are retained in the lysimeter, with a greater retention at the interface of two materials. Finally, the model makes a good reproduction of physical mechanisms observed and appears to be a useful tool for identifying key processes leading to a better understanding of the effect of capillary barrier on nanoparticle transfer in an unsaturated heterogeneous soil. Copyright © 2015 Elsevier B.V. All rights reserved.

  4. Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

    Energy Technology Data Exchange (ETDEWEB)

    Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe [Université Grenoble-Alpes, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

    2016-05-15

    Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ from which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very

  5. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  6. Cationic Reduced Graphene Oxide as Self-Aligned Nanofiller in the Epoxy Nanocomposite Coating with Excellent Anticorrosive Performance and Its High Antibacterial Activity.

    Science.gov (United States)

    Luo, Xiaohu; Zhong, Jiawen; Zhou, Qiulan; Du, Shuo; Yuan, Song; Liu, Yali

    2018-05-17

    The design and preparation of an excellent corrosion protection coating is still a grand challenge and is essential for large-scale practical application. Herein, a novel cationic reduced graphene oxide (denoted as RGO-ID + )-based epoxy coating was fabricated for corrosion protection. RGO-ID + was synthesized by in situ synthesis and salification reaction, which is stable dispersion in water and epoxy latex, and the self-aligned RGO-ID + -reinforced cathodic electrophoretic epoxy nanocomposite coating (denoted as RGO-ID + coating) at the surface of metal was prepared by electrodeposition. The self-alignment of RGO-ID + in the coatings is mainly attributed to the electric field force. The significantly enhanced anticorrosion performance of RGO-ID + coating is proved by a series of electrochemical measurements in different concentrated NaCl solutions and salt spray tests. This superior anticorrosion property benefits from the self-aligned RGO-ID + nanosheets and the quaternary-N groups present in the RGO-ID + nanocomposite coating. Interestingly, the RGO-ID + also exhibits a high antibacterial activity toward Escherichia coli with 83.4 ± 1.3% antibacterial efficiency, which is attributed to the synergetic effects of RGO-ID + and the electrostatic attraction and hydrogen bonding between RGO-ID + and E. coli. This work offers new opportunities for the successful development of effective corrosion protection and self-antibacterial coatings.

  7. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    Science.gov (United States)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  8. Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor

    International Nuclear Information System (INIS)

    Zhang Xianjun; Yang Yintang; Chai Changchun; Duan Baoxing; Song Kun; Chen Bin

    2012-01-01

    A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer. (semiconductor devices)

  9. Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

    Science.gov (United States)

    Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

    2017-10-01

    NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

  10. Investigation of Al2O3 barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

    International Nuclear Information System (INIS)

    Maindron, Tony; Aventurier, Bernard; Ghazouani, Ahlem; Jullien, Tony; Rochat, Névine; Simon, Jean-Yves; Viasnoff, Emilie

    2013-01-01

    Al 2 O 3 films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ 3 ) films made onto silicon wafers. It has been found that a thick ALD-deposited Al 2 O 3 layer (> 11 nm) greatly prevents the photo-oxidation of AlQ 3 films when exposed to continuous UV irradiation (350 mW/cm 2 ). Thin Al 2 O 3 thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al 2 O 3 layer have been easily observed as non-fluorescent AlQ 3 singularities, or black spots, under UV light on the system Si/AlQ 3 /Al 2 O 3 stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h −1 ·cm −2 and 0.243 h −1 ·cm −2 respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO 2 onto the Si/AlQ 3 /Al 2 O 3 sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h −1 ·cm −2 and 0.04 h −1 ·cm −2 respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al 2 O 3 films and confirm the general idea that a single Al 2 O 3 ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an additional moisture-stable layer. - Highlights: • Thin Al 2 O 3 films have been deposited by atomic layer deposition onto organic films.

  11. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    Energy Technology Data Exchange (ETDEWEB)

    Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

    2015-10-05

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

  12. Thin film YBa{sub 2}Cu{sub 3}O{sub 7} junctions with La{sub 2/3}Ca{sub 1/3}MnO{sub 3} barrier

    Energy Technology Data Exchange (ETDEWEB)

    Hepting, Matthias; Stoehr, Andreas; Werner, Robert; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut - Experimentalphysik II and Center for Collective Quantum Phenomena in LISAplus, Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany)

    2012-07-01

    We report on the fabrication and electric transport properties of thin film YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) junctions with La{sub 2/3}Ca{sub 1/3}MnO{sub 3} (LCMO) barrier. Heteroepitaxial YBCO/LCMO/YBCO multilayers were grown in-situ by pulsed laser deposition and subsequently patterned by photolithography and Ar ion milling to form rectangular junctions with typical area 5 {mu}m x 30 {mu}m. A self-alignment process was used for electrical contact via an Au wiring layer to the upper YBCO electrode, similarly as described. Samples were characterized at temperature T=4.2 K either in magnetically shielded environment or in in-plane magnetic fields B up to the Tesla range. We present and discuss current-voltage-characteristics and measurements of critical current vs B.

  13. Influence of PEDOT:PSS on the effectiveness of barrier layers prepared by atomic layer deposition in organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Wegler, Barbara, E-mail: barbara.wegler@siemens.com [Siemens AG, Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058 Erlangen, Germany and Center for Medical Physics and Engineering, University of Erlangen-Nuremberg, Henkestrasse 91, 91052 Erlangen (Germany); Schmidt, Oliver [Siemens AG, Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Hensel, Bernhard [Center for Medical Physics and Engineering, University of Erlangen-Nuremberg, Henkestrasse 91, 91052 Erlangen (Germany)

    2015-01-15

    Organic light emitting diodes (OLEDs) are well suited for energy saving lighting applications, especially when thinking about highly flexible and large area devices. In order to avoid the degradation of the organic components by water and oxygen, OLEDs need to be encapsulated, e.g., by a thin sheet of glass. As the device is then no longer flexible, alternative coatings are required. Atomic layer deposition (ALD) is a very promising approach in this respect. The authors studied OLEDs that were encapsulated by 100 nm Al{sub 2}O{sub 3} deposited by ALD. The authors show that this coating effectively protects the active surface area of the OLEDs from humidity. However, secondary degradation processes still occur at sharp edges of the OLED stack where the extremely thin encapsulation layer does not provide perfect coverage. Particularly, the swelling of poly(3,4-ethylenedioxythiophene) mixed with poly(styrenesulfonate), which is a popular choice for the planarization of the bottom electrode and at the same time acts as a hole injection layer, affects the effectiveness of the encapsulation layer.

  14. Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions

    International Nuclear Information System (INIS)

    Li Bin; Wei Lan; Wen Cai

    2014-01-01

    This paper aims to simulate the I–V static characteristic of the enhancement-mode (E-mode) N-polar GaN metal—insulator—semiconductor field effect transistor (MISFET) with self-aligned source/drain regions. Firstly, with SILVACO TCAD device simulation, the drain—source current as a function of the gate—source voltage is calculated and the dependence of the drain—source current on the drain—source voltage in the case of different gate—source voltages for the device with a 0.62 μm gate length is investigated. Secondly, a comparison is made with the experimental report. Lastly, the transfer characteristic with different gate lengths and different buffer layers has been performed. The results show that the simulation is in accord with the experiment at the gate length of 0.62 μm and the short channel effect becomes pronounced as gate length decreases. The E-mode will not be held below a 100 nm gate length unless both transversal scaling and vertical scaling are being carried out simultaneously. (semiconductor devices)

  15. Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

    International Nuclear Information System (INIS)

    Kirste, Lutz; Lim, Taek; Aidam, Rolf; Mueller, Stefan; Waltereit, Patrick; Ambacher, Oliver

    2010-01-01

    A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

    Science.gov (United States)

    Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

    2017-07-05

    To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

  17. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  18. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

    2013-01-01

    In the present study, we investigated the gas and moisture permeation barrier properties of Al 2 O 3 films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH 3 ) 3 ] as the Al source and O 2 plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al 2 O 3 at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10 −4 gm −2 day −1 and 1.2 × 10 −3 gm −2 day −1 , respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O 2 plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties

  19. TiO 2 Conduction Band Modulation with In 2 O 3 Recombination Barrier Layers in Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Brennan, Thomas P.

    2013-11-21

    Atomic layer deposition (ALD) was used to grow subnanometer indium oxide recombination barriers in a solid-state dye-sensitized solar cell (DSSC) based on the spiro-OMeTAD hole-transport material (HTM) and the WN1 donor-π-acceptor organic dye. While optimal device performance was achieved after 3-10 ALD cycles, 15 ALD cycles (∼2 Å of In2O 3) was observed to be optimal for increasing open-circuit voltage (VOC) with an average improvement of over 100 mV, including one device with an extremely high VOC of 1.00 V. An unexpected phenomenon was observed after 15 ALD cycles: the increasing VOC trend reversed, and after 30 ALD cycles VOC dropped by over 100 mV relative to control devices without any In2O3. To explore possible causes of the nonmonotonic behavior resulting from In2O3 barrier layers, we conducted several device measurements, including transient photovoltage experiments and capacitance measurements, as well as density functional theory (DFT) studies. Our results suggest that the VOC gains observed in the first 20 ALD cycles are due to both a surface dipole that pulls up the TiO2 conduction band and recombination suppression. After 30 ALD cycles, however, both effects are reversed: the surface dipole of the In2O3 layer reverses direction, lowering the TiO 2 conduction band, and mid-bandgap states introduced by In 2O3 accelerate recombination, leading to a reduced V OC. © 2013 American Chemical Society.

  20. Effects of gas temperature in the plasma layer on RONS generation in array-type dielectric barrier discharge at atmospheric pressure

    Science.gov (United States)

    Yoon, Sung-Young; Yi, Changho; Eom, Sangheum; Park, Seungil; Kim, Seong Bong; Ryu, Seungmin; Yoo, Suk Jae

    2017-12-01

    In this work, we studied the control of plasma-produced species under a fixed gas composition (i.e., ambient air) in a 10 kHz-driven array-type dielectric barrier atmospheric-pressure plasma discharge. Instead of the gas composition, only the gas velocity was controlled. Thus, the plasma-maintenance cost was considerably lower than methods such as external N2 or O2 injection. The plasma-produced species were monitored using Fourier transformed infrared spectroscopy. The discharge properties were measured using a voltage probe, current probe, infrared camera, and optical emission spectroscopy. The results showed that the major plasma products largely depend on the gas temperature in the plasma discharge layer. The gas temperature in the plasma discharge layer was significantly different to the temperature of the ceramic adjacent to the plasma discharge layer, even in the small discharge power density of ˜15 W/cm2 or ˜100 W/cm3. Because the vibrational excitation of N2 was suppressed by the higher gas flow, the major plasma-produced species shifted from NOx in low flow to O3 in high flow.

  1. Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

    Science.gov (United States)

    Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

    2016-08-23

    We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

  2. Investigation of Al{sub 2}O{sub 3} barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

    Energy Technology Data Exchange (ETDEWEB)

    Maindron, Tony; Aventurier, Bernard [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Ghazouani, Ahlem; Jullien, Tony [LETI/DTSI/SDEP/Laboratoire Dépôt Equipe 2, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Rochat, Névine [LETI/DTSI/Service de Caractérisation des Matériaux et Composants, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Simon, Jean-Yves; Viasnoff, Emilie [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

    2013-12-02

    Al{sub 2}O{sub 3} films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ{sub 3}) films made onto silicon wafers. It has been found that a thick ALD-deposited Al{sub 2}O{sub 3} layer (> 11 nm) greatly prevents the photo-oxidation of AlQ{sub 3} films when exposed to continuous UV irradiation (350 mW/cm{sup 2}). Thin Al{sub 2}O{sub 3} thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al{sub 2}O{sub 3} layer have been easily observed as non-fluorescent AlQ{sub 3} singularities, or black spots, under UV light on the system Si/AlQ{sub 3}/Al{sub 2}O{sub 3} stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h{sup −1}·cm{sup −2} and 0.243 h{sup −1}·cm{sup −2} respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO{sub 2} onto the Si/AlQ{sub 3}/Al{sub 2}O{sub 3} sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h{sup −1}·cm{sup −2} and 0.04 h{sup −1}·cm{sup −2} respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al{sub 2}O{sub 3} films and confirm the general idea that a single Al{sub 2}O{sub 3} ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an

  3. Use of weathered and fresh bottom ash mix layers as a subbase in road constructions: environmental behavior enhancement by means of a retaining barrier.

    Science.gov (United States)

    Del Valle-Zermeño, R; Chimenos, J M; Giró-Paloma, J; Formosa, J

    2014-12-01

    The presence of neoformed cement-like phases during the weathering of non-stabilized freshly quenched bottom ash favors the development of a bound pavement material with improved mechanical properties. Use of weathered and freshly quenched bottom ash mix layers placed one over the other allowed the retention of leached heavy metals and metalloids by means of a reactive percolation barrier. The addition of 50% of weathered bottom ash to the total subbase content diminished the release of toxic species to below environmental regulatory limits. The mechanisms of retention and the different processes and factors responsible of leaching strongly depended on the contaminant under concern as well as on the chemical and physical factors. Thus, the immediate reuse of freshly quenched bottom ash as a subbase material in road constructions is possible, as both the mechanical properties and long-term leachability are enhanced. Copyright © 2014 Elsevier Ltd. All rights reserved.

  4. Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

    International Nuclear Information System (INIS)

    Chauhan, Lalit; Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A.; Hughes, G.

    2015-01-01

    The effect of inserting ultra-thin atomic layer deposited Al 2 O 3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al 2 O 3 /p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al 2 O 3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al 2 O 3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al 2 O 3 /n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface

  5. Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al{sub 2}O{sub 3} interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Lalit [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A. [Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore 560012 (India); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

    2015-08-31

    The effect of inserting ultra-thin atomic layer deposited Al{sub 2}O{sub 3} dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al{sub 2}O{sub 3}/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al{sub 2}O{sub 3} interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al{sub 2}O{sub 3} interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al{sub 2}O{sub 3}/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface.

  6. Large-scale fabrication of linear low density polyethylene/layered double hydroxides composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Jiazhuo; Zhang, Kun; Zhao, Qinghua [College of Chemistry and Material Science, Shandong Agricultural University, 61 Daizong Street, Tai' an 271018 (China); Wang, Qingguo, E-mail: wqgyyy@126.com [College of Food Science and Engineering, Shandong Agricultural University, 61 Daizong Street, Tai' an 271018 (China); Xu, Jing, E-mail: jiaxu@sdau.edu.cn [College of Chemistry and Material Science, Shandong Agricultural University, 61 Daizong Street, Tai' an 271018 (China)

    2016-11-15

    Novel LDH intercalated with organic aliphatic long-chain anion was large-scale synthesized innovatively by high-energy ball milling in one pot. The linear low density polyethylene (LLDPE)/layered double hydroxides (LDH) composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties were fabricated by melt blending and blowing process. FT IR, XRD, SEM results show that LDH particles were dispersed uniformly in the LLDPE composite films. Particularly, LLDPE composite film with 1% LDH exhibited the optimal performance among all the composite films with a 60.36% enhancement in the water vapor barrier property and a 45.73 °C increase in the temperature of maximum mass loss rate compared with pure LLDPE film. Furthermore, the improved infrared absorbance (1180–914 cm{sup −1}) of LLDPE/LDH films revealed the significant enhancement of heat retention. Therefore, this study prompts the application of LLDPE/LDH films as agricultural films with superior heat retention. - Graphical abstract: The fabrication process of LLDPE/LDH composite films. - Highlights: • LDH with basal spacing of 4.07 nm was synthesized by high-energy ball milling. • LLDPE composite films with homogeneous LDH dispersion were fabricated. • The properties of LLDPE/LDH composite films were improved. • LLDPE/LDH composite films show superior heat retention property.

  7. Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    International Nuclear Information System (INIS)

    Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

    2015-01-01

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe 2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10 13 /cm 2 /eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices

  8. Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

    International Nuclear Information System (INIS)

    Eremenko, M; Budkin, G; Reznitsky, A

    2015-01-01

    We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings. (paper)

  9. Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

    Science.gov (United States)

    Eremenko, M.; Budkin, G.; Reznitsky, A.

    2015-11-01

    We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings.

  10. Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junjie; Feng, Simin [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Rhodes, Daniel; Balicas, Luis [National High Magnetic Field Lab, Florida State University, Tallahassee, Florida 32310 (United States); Nguyen, Minh An T. [Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Mallouk, Thomas E. [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Biochemistry and Molecular Biology, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Terrones, Mauricio [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Zhu, J., E-mail: jzhu@phys.psu.edu [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-04-13

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

  11. Large-scale fabrication of linear low density polyethylene/layered double hydroxides composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties

    International Nuclear Information System (INIS)

    Xie, Jiazhuo; Zhang, Kun; Zhao, Qinghua; Wang, Qingguo; Xu, Jing

    2016-01-01

    Novel LDH intercalated with organic aliphatic long-chain anion was large-scale synthesized innovatively by high-energy ball milling in one pot. The linear low density polyethylene (LLDPE)/layered double hydroxides (LDH) composite films with enhanced heat retention, thermal, mechanical, optical and water vapor barrier properties were fabricated by melt blending and blowing process. FT IR, XRD, SEM results show that LDH particles were dispersed uniformly in the LLDPE composite films. Particularly, LLDPE composite film with 1% LDH exhibited the optimal performance among all the composite films with a 60.36% enhancement in the water vapor barrier property and a 45.73 °C increase in the temperature of maximum mass loss rate compared with pure LLDPE film. Furthermore, the improved infrared absorbance (1180–914 cm −1 ) of LLDPE/LDH films revealed the significant enhancement of heat retention. Therefore, this study prompts the application of LLDPE/LDH films as agricultural films with superior heat retention. - Graphical abstract: The fabrication process of LLDPE/LDH composite films. - Highlights: • LDH with basal spacing of 4.07 nm was synthesized by high-energy ball milling. • LLDPE composite films with homogeneous LDH dispersion were fabricated. • The properties of LLDPE/LDH composite films were improved. • LLDPE/LDH composite films show superior heat retention property.

  12. Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin [Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Shin, So-Ra; Park, Jong-Wan, E-mail: jwpark@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-01-15

    The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H{sub 2} plasma, while Al was deposited using trimethylaluminum as the precursor and H{sub 2} plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO{sub 2} dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

  13. Adhesion, resistivity and structural, optical properties of molybdenum on steel sheet coated with barrier layer done by sol–gel for CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Amouzou, Dodji, E-mail: dodji.amouzou@fundp.ac.be [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium); Dumont, Jacques [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium); Fourdrinier, Lionel; Richir, Jean-Baptiste; Maseri, Fabrizio [CRM-Group, Boulevard de Colonster, B 57, 4000 Liège (Belgium); Sporken, Robert [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61, 5000 Namur (Belgium)

    2013-03-01

    Molybdenum films are investigated on stainless steel substrates coated with polysilazane based sol–gel and SiO{sub x} layers for flexible CIGS solar cell applications. Thermal stability of the multilayer has been studied. The thickness of polysilazane films are significantly reduced (17%) after heat treatment suggesting a thermal degradation. Four different microstructures were found for Mo films by varying argon total pressure from 2.6 × 10{sup −1} Pa to 2.6 Pa. It was shown that continuous films, low sheet resistance (0.5 Ω/□) and well facetted grains can be achieved when Mo films are deposited on heated substrates at homologous temperature, T of 0.2. - Highlights: ► Steel sheet is functionalized for Cu[Inx,Ga(1 − x)Se2] solar cells. ► Varying deposition pressure impacts the microstructure of Mo films. ► High thermal stability of the sol gel based barrier layer has been investigated. ► Low sheet resistance and continuous Mo films have been obtained at 550°C. ► Thermal stability of functionalized steel sheets at 550°C has been investigated.

  14. Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

    International Nuclear Information System (INIS)

    Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin; Shin, So-Ra; Park, Jong-Wan

    2014-01-01

    The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H 2 plasma, while Al was deposited using trimethylaluminum as the precursor and H 2 plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO 2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects

  15. Improving photoelectrochemical performance on quantum dots co-sensitized TiO{sub 2} nanotube arrays using ZnO energy barrier by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Min [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Zeng, Xi [College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500 (China); Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Lin, Shiwei, E-mail: linsw@hainu.edu.cn [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China)

    2016-12-01

    Graphical abstract: - Highlights: • The length of TNTAs has a balance between the charge recombination and the QDs loading. • The introduction of ZnO interlayer by ALD could improve the QDs absorption. • The optimal thickness of ZnO interlayer is 1.5 nm prepared by 10 cycles ALD. - Abstract: PbS and CdS quantum dots (QDs) have been deposited onto TiO{sub 2} nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO{sub 2} nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm{sup −2}, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm{sup −2} and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

  16. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2015-02-18

    Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

  17. Improving photoelectrochemical performance on quantum dots co-sensitized TiO_2 nanotube arrays using ZnO energy barrier by atomic layer deposition

    International Nuclear Information System (INIS)

    Zeng, Min; Zeng, Xi; Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen; Lin, Shiwei

    2016-01-01

    Graphical abstract: - Highlights: • The length of TNTAs has a balance between the charge recombination and the QDs loading. • The introduction of ZnO interlayer by ALD could improve the QDs absorption. • The optimal thickness of ZnO interlayer is 1.5 nm prepared by 10 cycles ALD. - Abstract: PbS and CdS quantum dots (QDs) have been deposited onto TiO_2 nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO_2 nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm"−"2, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm"−"2 and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

  18. High-velocity DC-VPS for diffusion and protecting barrier layers in solid oxide fuel cells (SOFCs)

    Science.gov (United States)

    Henne, R. H.; Franco, T.; Ruckdäschel, R.

    2006-12-01

    High-temperature fuel cells of the solid oxide fuel cell (SOFC) type as direct converter of chemical into electrical energy show a high potential for reducing considerably the specific energy consumption in different application fields. Of particular interest are advanced lightweight planar cells for electricity supply units in cars and other mobile systems. Such cells, in one new design, consist mainly of metallic parts, for example, of ferrite steels. These cells shall operate in the temperature range of 700 to 800 °C where oxidation and diffusion processes can be of detrimental effect on cell performance for long-term operation. Problems arise in particular by diffusion of chromium species from the interconnect or the cell containment into the electrolyte/cathode interface forming insulating phases and by the mutual diffusion of substrate and anode material, for example, iron and chromium from the ferrite into the anode and nickel from the anode into the ferrite, which in both cases reduces performance and system lifetime. Additional intermediate layers of perovskite-type material, (e.g., doped LaCrO3) applied with high-velocity direct-current vacuum plasma spraying (DC-VPS) can reduce such effects considerably if they are stable and of high electronic conductivity.

  19. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  20. Roughness and uniformity improvements on self-aligned quadruple patterning technique for 10nm node and beyond by wafer stress engineering

    Science.gov (United States)

    Liu, Eric; Ko, Akiteru; O'Meara, David; Mohanty, Nihar; Franke, Elliott; Pillai, Karthik; Biolsi, Peter

    2017-05-01

    Dimension shrinkage has been a major driving force in the development of integrated circuit processing over a number of decades. The Self-Aligned Quadruple Patterning (SAQP) technique is widely adapted for sub-10nm node in order to achieve the desired feature dimensions. This technique provides theoretical feasibility of multiple pitch-halving from 193nm immersion lithography by using various pattern transferring steps. The major concept of this approach is to a create spacer defined self-aligned pattern by using single lithography print. By repeating the process steps, double, quadruple, or octuple are possible to be achieved theoretically. In these small architectures, line roughness control becomes extremely important since it may contribute to a significant portion of process and device performance variations. In addition, the complexity of SAQP in terms of processing flow makes the roughness improvement indirective and ineffective. It is necessary to discover a new approach in order to improve the roughness in the current SAQP technique. In this presentation, we demonstrate a novel method to improve line roughness performances on 30nm pitch SAQP flow. We discover that the line roughness performance is strongly related to stress management. By selecting different stress level of film to be deposited onto the substrate, we can manipulate the roughness performance in line and space patterns. In addition, the impact of curvature change by applied film stress to SAQP line roughness performance is also studied. No significant correlation is found between wafer curvature and line roughness performance. We will discuss in details the step-by-step physical performances for each processing step in terms of critical dimension (CD)/ critical dimension uniformity (CDU)/line width roughness (LWR)/line edge roughness (LER). Finally, we summarize the process needed to reach the full wafer performance targets of LWR/LER in 1.07nm/1.13nm on 30nm pitch line and space pattern.

  1. Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package

    International Nuclear Information System (INIS)

    Ikeda, Akihiro; Sakamoto, Atsushi; Hattori, Reiji; Kuroki, Yukinori

    2009-01-01

    Electroless Ni-B was plated on SiO 2 as a barrier layer against Cu diffusion for through-Si via (TSV) interconnections in a 3-dimensional multi-chip package. The electroless Ni-B was deposited on the entire area of the SiO 2 side wall of a deep via with vapor phase pre-deposition of 3-aminopropyl-triethoxysilane on the SiO 2 . The carrier lifetimes in the Si substrates plated with Ni-B/Cu did not decrease with an increase in annealing temperature up to 400 deg. C . The absence of degradation of carrier lifetimes indicates that Cu atoms did not diffuse into the Si through the Ni-B. The advantages of electroless Ni-B (good conformal deposition and forming an effective diffusion barrier against Cu) make it useful as a barrier layer for TSV interconnections in a 3-dimensional multi-chip package

  2. Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers

    Energy Technology Data Exchange (ETDEWEB)

    Uesugi, Kenjiro; Hikosaka, Toshiki; Ono, Hiroshi; Sakano, Tatsunori; Nunoue, Shinya [Corporate Research and Development Center, Toshiba Corporation, Kawasaki (Japan)

    2017-08-15

    GaN grown on nonpolar or semipolar faces have been widely developed as a promising material for the next generation optical and electronic devices. In this work, (11-22) semipolar InGaN/GaN MQWs were grown on patterned (113) Si substrates and fabricated into thin-film-type flip-chip LEDs. From CL and TEM measurement, generation of basal plane defects (BPDs) around MQWs and Strain-relaxation layers (SRLs) has been observed. The relationship between MQW structures and formation of BPDs has been investigated. By optimizing MQW structures, light output power and external quantum efficiency have been improved with thick InGaN well layers and GaN barrier layers. Introducing AlGaN barrier layers has enabled further reduction of BPDs in MQWs and, as a result, an enhancement of EQE has been achieved. The maximum EQE value of the sample with AlGaN barrier layers was 12.9%.This result indicates that the reduction of BPDs is an effective approach for obtaining the high-efficiency semipolar LEDs on Si substrates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission

    Energy Technology Data Exchange (ETDEWEB)

    Alam, Saiful [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Georgia Tech-CNRS, UMI 2958, Metz (France); CEA-LETI, Minatec Campus, Grenoble (France); Sundaram, Suresh; Li, Xin; El Gmili, Youssef [Georgia Tech-CNRS, UMI 2958, Metz (France); Jamroz, Miryam E.; Robin, Ivan C. [CEA-LETI, Minatec Campus, Grenoble (France); Voss, Paul L.; Ougazzaden, Abdallah [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Georgia Tech-CNRS, UMI 2958, Metz (France); Salvestrini, Jean-Paul [Georgia Tech-CNRS, UMI 2958, Metz (France); LMOPS, University of Lorraine, EA4423, Metz (France)

    2017-08-15

    The effect of indium (In) in the barrier of InGaN/GaN multiple quantum well (MQW) has been studied for MQWs with and without semi-bulk InGaN buffer. From simulation, the optimum In content in the barrier with 3-5 nm width is 5-7% to get the optimal material quality and internal quantum efficiency (IQE) of ∝65% for 450-480 nm emission range. Simulation shows a reduction of the potential barrier due to band flattening, a more homogeneous distribution of electrons and holes in the active region and subsequently, a more radiative recombination rate with InGaN as barrier layer. Both cathodoluminescence (CL) and photoluminescence (PL) experimental results show a blue-shift of emission wavelength along with an enhancement in the emission intensity when GaN barrier is replaced with InGaN barrier, for a MQW structure both with and without the semi-bulk InGaN buffer. We attribute this blue shift to the reduced polarization mismatch and increased effective bandgap. This InGaN barrier-related improvement in IQE and efficiency droop could be useful for the realization of longer wavelength ''green-gap'' range LEDs where poor IQE and efficiency droop are more prominent due to high indium (In) in the active region. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Combined computational-experimental approach to predict blood-brain barrier (BBB) permeation based on "green" salting-out thin layer chromatography supported by simple molecular descriptors.

    Science.gov (United States)

    Ciura, Krzesimir; Belka, Mariusz; Kawczak, Piotr; Bączek, Tomasz; Markuszewski, Michał J; Nowakowska, Joanna

    2017-09-05

    The objective of this paper is to build QSRR/QSAR model for predicting the blood-brain barrier (BBB) permeability. The obtained models are based on salting-out thin layer chromatography (SOTLC) constants and calculated molecular descriptors. Among chromatographic methods SOTLC was chosen, since the mobile phases are free of organic solvent. As consequences, there are less toxic, and have lower environmental impact compared to classical reserved phases liquid chromatography (RPLC). During the study three stationary phase silica gel, cellulose plates and neutral aluminum oxide were examined. The model set of solutes presents a wide range of log BB values, containing compounds which cross the BBB readily and molecules poorly distributed to the brain including drugs acting on the nervous system as well as peripheral acting drugs. Additionally, the comparison of three regression models: multiple linear regression (MLR), partial least-squares (PLS) and orthogonal partial least squares (OPLS) were performed. The designed QSRR/QSAR models could be useful to predict BBB of systematically synthesized newly compounds in the drug development pipeline and are attractive alternatives of time-consuming and demanding directed methods for log BB measurement. The study also shown that among several regression techniques, significant differences can be obtained in models performance, measured by R 2 and Q 2 , hence it is strongly suggested to evaluate all available options as MLR, PLS and OPLS. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    International Nuclear Information System (INIS)

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-01-01

    Time-dependent responses of drain current (I d ) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I d by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10 12 cm −2 . When UV light is turned off at 300 K, a part of increased I d decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I d at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light

  6. Effect of La2O3 addition on interface chemistry between 4YSZ top layer and Ni based alloy bond coat in thermal barrier coating by EB PVD.

    Science.gov (United States)

    Park, Chan-Young; Yang, Young-Hwan; Kim, Seong-Won; Lee, Sung-Min; Kim, Hyung-Tae; Jang, Byung-Koog; Lim, Dae-Soon; Oh, Yoon-Suk

    2014-11-01

    The effect of a 5 mol% La2O3 addition on the forming behavior and compositional variation at interface between a 4 mol% Yttria (Y2O3) stabilized ZrO2 (4YSZ) top coat and bond coat (NiCrAlY) as a thermal barrier coating (TBC) has been investigated. Top coats were deposited by electron beam physical vapor deposition (EB PVD) onto a super alloy (Ni-Cr-Co-Al) substrate without pre-oxidation of the bond coat. Top coats are found to consist of dense columnar grains with a thin interdiffusion layer between metallic bond coats. In the as-received 4YSZ coating, a thin interdiffusion zone at the interface between the top and bond coats was found to consist of a Ni-Zr intermetallic compound with a reduced quantity of Y, Al or O elements. On the other hand, in the case of an interdiffusion area of 5 mol% La2O3-added 4YSZ coating, it was found that the complicated composition and structure with La-added YSZ and Ni-Al rich compounds separately. The thermal conductivity of 5 mol% La2O3-added 4YSZ coating (- 1.6 W/m x k at 1100 degrees C) was lower than a 4YSZ coating (- 3.2 W/m x k at 1100 degrees C) alone.

  7. Dynamic analysis of double-row self-aligning ball bearings due to applied loads, internal clearance, surface waviness and number of balls

    Science.gov (United States)

    Zhuo, Yaobin; Zhou, Xiaojun; Yang, Chenlong

    2014-11-01

    In this paper, a three degrees of freedom (dof) model was established for a double-row self-aligning ball bearing (SABB) system, and was applied to study the dynamic behavior of the system during starting process and constant speed rotating process. A mathematical model was developed concerning stiffness and damping characteristics of the bearing, as well as three-dimensional applied load, rotor centrifugal force, etc. Balls and races were all considered as nonlinear springs, and the contact force between ball and race was calculated based on classic Hertzian elastic contact deformation theory and deformation compatibility theory. The changes of each ball's contact force and loaded angle of each row were taken into account. In order to solve the nonlinear dynamical equilibrium equations of the system, these equations were rewritten as differential equations and the fourth order Runge-Kutta method was used to solve the equations iteratively. In order to verify accuracy of the dynamical model and correctness of the numerical solution method, a kind of SABB-BRF30 was chosen for case studies. The effects of several important governing parameters, such as radial and axial applied loads, normal internal, inner and outer races waviness, and number of balls were investigated. These parametric studies led to a complete characterization of the shaft-bearing system vibration transmission. The research provided a theoretical reference for new type bearing design, shaft-bearing system kinetic analysis, optimal design, etc.

  8. Interfacial Engineering of Nanoporous Architectures in Ga2O3 Film toward Self-Aligned Tubular Nanostructure with an Enhanced Photocatalytic Activity on Water Splitting.

    Science.gov (United States)

    Shrestha, Nabeen K; Bui, Hoa Thi; Lee, Taegweon; Noh, Yong-Young

    2018-04-17

    The present work demonstrates the formation of self-aligned nanoporous architecture of gallium oxide by anodization of gallium metal film controlled at -15 °C in aqueous electrolyte consisting of phosphoric acid. SEM examination of the anodized film reveals that by adding ethylene glycol to the electrolyte and optimizing the ratio of phosphoric acid and water, chemical etching at the oxide/electrolyte interfaces can be controlled, leading to the formation of aligned nanotubular oxide structures with closed bottom. XPS analysis confirms the chemical composition of the oxide film as Ga 2 O 3 . Further, XRD and SAED examination reveals that the as-synthesized nanotubular structure is amorphous, and can be crystallized to β-Ga 2 O 3 phase by annealing the film at 600 °C. The nanotubular structured film, when used as photoanode for photoelectrochemical splitting of water, achieved a higher photocurrent of about two folds than that of the nanoporous film, demonstrating the rewarding effect of the nanotubular structure. In addition, the work also demonstrates the formation of highly organized nonporous Ga 2 O 3 structure on a nonconducting glass substrate coated with thin film of Ga-metal, highlighting that the current approach can be extended for the formation of self-organized nanoporous Ga 2 O 3 thin film even on nonconducting flexible substrates.

  9. Development of a guiding system and visual feedback real-time controller for the high-speed self-align optical cable winding

    International Nuclear Information System (INIS)

    Lee, Chang Woo; Kang, Hyun Kyoo; Shin, Kee Hyun

    2008-01-01

    Recently, the demand for the optical cable has been rapidly growing because of the increasing number of internet users and the high speed internet data transmission required. But the present optical cable winding systems have some serious problems such as pile-up and collapse of cables usually near the flange of the bobbin in the process of cables winding. To reduce the pile-up collapse in cable winding systems, a new guiding system is developed for a high-speed self-align cable winding. First, mathematical models for the winding process and bobbin shape fault compensation were proposed, the winding mechanism was analyzed and synchronization logics for the motions of winding, traversing, and the guiding were created. A prototype cable winding systems was manufactured to validate the new guiding system and the suggested logic. Experiment results showed that the winding system with the developed guiding system outperformed the system without the guiding system in reducing pile-up and collapse in high-speed winding

  10. Atomic layer deposition α-Al2O3 diffusion barriers to eliminate the memory effect in beta-gamma radioxenon detectors

    International Nuclear Information System (INIS)

    Warburton, W.K.; Wolfgang Hennig; Bertrand, J.A.; George, S.M.; Steven Biegalski

    2013-01-01

    Well designed scintillator detectors, including such examples as ARSA, SAUNA, and XIA's 'PhosWatch', can readily achieve the state of the art radioxenon detection limits required for nuclear explosion monitoring. They are also reliable, robust detectors that do not require cryogenic cooling for operation. All three employ the principle of beta-gamma coincidence detection to reduce background counting rates, using a BC-404 plastic scintillator to detect the betas and a CsI or NaI scintillator to detect the gamma-rays. As a consequence of this commonality of design, all three also display a 'memory effect' arising from the diffusion of Xe into BC-404. Thus, when one sample is pumped out of the detector, a fraction remains behind, embedded in the BC-404, where it artificially raises the signal counting rate for the next sample. While this is not a fatal flaw in scintillator detectors, developing a method to eliminate the memory effect would significantly enhance their utility. This paper reports efforts to develop thin, amorphous Al 2 O 3 films, deposited by atomic layer deposition (ALD) to act as diffusion barriers on the BC-404 surfaces exposed to radioxenon. Using radon as a convenient substitute for Xe, film thicknesses between 2 and 10 nm were originally investigated and found to show a memory effect to varying degrees. A second set of 20 and 30 nm films was then produced, which appeared to completely eliminate the radon memory effect, but, when consequentially tested with radioxenon, were found to exhibit xenon memory effects that were approximately half of the effect found on uncoated BC-404. We draw two conclusions from this result. The first is that it will be necessary to develop an improved method for depositing thicker ALD Al 2 O 3 films at lower temperatures while still retaining high film quality. The second is that, since xenon is required to test for the xenon memory effect, we need a test method that does not require xenon radio-isotopes in order to

  11. Atomic layer deposition of Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/TiO{sub 2} barrier coatings to reduce the water vapour permeability of polyetheretherketone

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadzada, Tamkin, E-mail: tahm4852@uni.sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, NSW 2006 (Australia); McKenzie, David R.; James, Natalie L.; Yin, Yongbai [School of Physics, University of Sydney, NSW 2006 (Australia); Li, Qing [School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, NSW 2006 (Australia)

    2015-09-30

    We demonstrate significantly enhanced barrier properties of polyetheretherketone (PEEK) against water vapour penetration by depositing Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/TiO{sub 2} nanofilms grown by atomic layer deposition (ALD). Nanoindentation analysis revealed good adhesion strength of a bilayer Al{sub 2}O{sub 3}/TiO{sub 2} coating to PEEK, while the single layer Al{sub 2}O{sub 3} coating displayed flaking and delamination. We identified three critical design parameters for achieving the optimum barrier properties of ALD Al{sub 2}O{sub 3}/TiO{sub 2} coatings on PEEK. These are a minimum total thickness dependent on the required water vapour transmission rate, the use of an Al{sub 2}O{sub 3}/TiO{sub 2} bilayer coating and the application of the coating to both sides of the PEEK film. Using these design parameters, we achieved a reduction in moisture permeability of PEEK of over two orders of magnitude while maintaining good adhesion strength of the polymer–thin film system. - Highlights: • Atomic layer deposition of Al{sub 2}O{sub 3}/TiO{sub 2} coatings reduced water vapour permeability. • Bilayer coatings reduced the permeability more than single layer coatings. • Bilayer coatings displayed higher adhesion strength than the single layer coatings. • Double-sided coatings performed better than single-sided coatings. • Correlation was found between total thickness and reduced water vapour permeability.

  12. In-situ fabrication of MoSi{sub 2}/SiC–Mo{sub 2}C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo{sub 2}C barrier layer at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Gong, Qianming, E-mail: gongqianming@mail.tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Shao, Yang; Zhuang, Daming [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Liang, Ji [Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China)

    2014-07-01

    MoSi{sub 2}/SiC–Mo{sub 2}C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo{sub 2}C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi{sub 2}/SiC layer on the upper part of Mo{sub 2}C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo{sub 2}C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi{sub 2}/SiC composite layer.

  13. In-situ fabrication of MoSi2/SiC–Mo2C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo2C barrier layer at high temperature

    International Nuclear Information System (INIS)

    Liu, Jun; Gong, Qianming; Shao, Yang; Zhuang, Daming; Liang, Ji

    2014-01-01

    MoSi 2 /SiC–Mo 2 C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo 2 C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi 2 /SiC layer on the upper part of Mo 2 C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo 2 C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi 2 /SiC composite layer.

  14. Surface flattening processes of metal layer and their effect on transport properties of magnetic tunnel junctions with Al-N barrier

    International Nuclear Information System (INIS)

    Yoshimura, S.; Nozawa, T.; Shoyama, T.; Tsunoda, M.; Takahashi, M.

    2005-01-01

    In order to form ultrathin insulating layer in magnetic tunnel junctions (MTJs), two surface flatting processes of metal films are investigated. Oxygen-additive sputter-deposition process was applied to the bottom Cu electrode and the Al layer to be nitrided. Dry-etching process was applied for the surface treatment of lower Co-Fe layer. As a result, the surface roughness of stacked ultrathin Al layer to be nitrided is reduced from 3.2A to 1.7A, and the tunnel magnetoresistance (TMR) ratio of the MTJs increases from 1% to 26% while maintaining resistance-area product (RxA) less than 5x10 2 Ω μm 2 in the Co-Fe/Al(6A)-N/Co-Fe MTJs. We conclude that the decrease of the surface roughness of Al layer is one of the key factors to realize high performance MTJs with low RxA and high TMR ratio

  15. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.

    Science.gov (United States)

    Xu, Peiqiang; Jiang, Yang; Chen, Yao; Ma, Ziguang; Wang, Xiaoli; Deng, Zhen; Li, Yan; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

    2012-02-20

    GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.

  16. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Purches, W. E. [School of Physics, UNSW, Sydney 2052 (Australia); Rossi, A.; Zhao, R. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Kafanov, S.; Duty, T. L. [School of Physics, UNSW, Sydney 2052 (Australia); Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052 (Australia); Dzurak, A. S. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia); Rogge, S.; Tettamanzi, G. C., E-mail: g.tettamanzi@unsw.edu.au [School of Physics, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia)

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  17. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

    Science.gov (United States)

    Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

    2014-05-28

    The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

  18. High Performance Multi Barrier Thermionic Devices

    National Research Council Canada - National Science Library

    Vashaee, Daryoosh; Shakouri, Ali

    2003-01-01

    Thermoelectric transport perpendicular to layers in multiple barrier superlattice structures is investigated theoretically in two limiting cases of no lateral momentum scattering and strong scattering...

  19. Barrier mechanisms in the Drosophila blood-brain barrier

    Directory of Open Access Journals (Sweden)

    Samantha Jane Hindle

    2014-12-01

    Full Text Available The invertebrate blood-brain barrier field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through GPCR signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate blood-brain barrier has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many blood-brain barrier mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the blood-brain barrier can govern whole animal physiologies. This includes novel functions of blood-brain barrier gap junctions in orchestrating synchronized neuroblast proliferation, and of blood-brain barrier secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate blood-brain barrier anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study.

  20. Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

    Directory of Open Access Journals (Sweden)

    Xingpeng Liu

    2017-12-01

    Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

  1. Design of a self-aligned, wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with 10 nm magnetic force microscope resolution

    Energy Technology Data Exchange (ETDEWEB)

    Karcı, Özgür [NanoMagnetics Instruments Ltd., Hacettepe - İvedik OSB Teknokent, 1368. Cad., No: 61/33, 06370, Yenimahalle, Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Dede, Münir [NanoMagnetics Instruments Ltd., Hacettepe - İvedik OSB Teknokent, 1368. Cad., No: 61/33, 06370, Yenimahalle, Ankara (Turkey); Oral, Ahmet, E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey)

    2014-10-01

    We describe the design of a wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with a self-aligned fibre-cantilever mechanism. An alignment chip with alignment groves and a special mechanical design are used to eliminate tedious and time consuming fibre-cantilever alignment procedure for the entire temperature range. A low noise, Michelson fibre interferometer was integrated into the system for measuring deflection of the cantilever. The spectral noise density of the system was measured to be ~12 fm/√Hz at 4.2 K at 3 mW incident optical power. Abrikosov vortices in BSCCO(2212) single crystal sample and a high density hard disk sample were imaged at 10 nm resolution to demonstrate the performance of the system.

  2. Design of a self-aligned, wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with 10 nm magnetic force microscope resolution

    International Nuclear Information System (INIS)

    Karcı, Özgür; Dede, Münir; Oral, Ahmet

    2014-01-01

    We describe the design of a wide temperature range (300 mK-300 K) atomic force microscope/magnetic force microscope with a self-aligned fibre-cantilever mechanism. An alignment chip with alignment groves and a special mechanical design are used to eliminate tedious and time consuming fibre-cantilever alignment procedure for the entire temperature range. A low noise, Michelson fibre interferometer was integrated into the system for measuring deflection of the cantilever. The spectral noise density of the system was measured to be ∼12 fm/√Hz at 4.2 K at 3 mW incident optical power. Abrikosov vortices in BSCCO(2212) single crystal sample and a high density hard disk sample were imaged at 10 nm resolution to demonstrate the performance of the system

  3. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

    Science.gov (United States)

    Wang, Hsiang-Chen; Chen, Meng-Chu; Lin, Yen-Sheng; Lu, Ming-Yen; Lin, Kuang-I.; Cheng, Yung-Chen

    2017-11-01

    The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I- V) curves, light output power versus injection current ( L- I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (- 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

  4. Shottky-barrier formation

    International Nuclear Information System (INIS)

    Guines, F.; Sanchez-Dehesa, J.; Flores, F.

    1983-01-01

    In this paper a realistic selfconsistent calculation of an abrupt metal-semiconductor junction is presented by means of a tight-binding approach. A specific Si-Ag junction has been considered, and the charge neutrality level as well as the barrier height have been determined in good agreement with experiments. For a generaljunction it is shown that the interface properties depend essentially on the characteristics of the first metal layer and its interaction with the semiconductor. (Author) [pt

  5. The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnect

    Energy Technology Data Exchange (ETDEWEB)

    Mun, Ki-Yeung [School of Materials Science and Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-si, Gyeongsangbuk-do 712-749 (Korea, Republic of); Hong, Tae Eun [Busan Center, Korea Basic Science Institute, 1275 Jisadong, Gangseogu, Busan 618-230 (Korea, Republic of); Cheon, Taehoon [School of Materials Science and Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-si, Gyeongsangbuk-do 712-749 (Korea, Republic of); Center for Core Research Facilities, Daegu Gyeongbuk Institute of Science and Technology, Sang-ri, Hyeonpung-myeon, Dalseong-gun, Daegu (Korea, Republic of); Jang, Yujin [School of Materials Science and Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-si, Gyeongsangbuk-do 712-749 (Korea, Republic of); Lim, Byoung-Yong; Kim, Sunjung [School of Materials Science and Engineering, University of Ulsan, Mugeo-dong, Nam-go, Ulsan 680-749 (Korea, Republic of); Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan-si, Gyeongsangbuk-do 712-749 (Korea, Republic of)

    2014-07-01

    N-incorporated Ru films were deposited by atomic layer deposition (ALD) at a deposition temperature of 270 °C using 1-isopropyl-4-methylbenzene-cyclohexa-1,3-dienyl ruthenium and N{sub 2}/H{sub 2} mixture plasma as the precursor and reactant, respectively. The N content in the ALD-Ru films was controlled by changing the gas ratio [N{sub 2} versus the total gas (N{sub 2} + H{sub 2}) flow rates] in the reactant from 0.82 to 1. Secondary ion mass spectrometry depth profiling revealed an increase in N content in the film with increasing gas ratio. The amount of N in the ALD-Ru films had a considerable effect on the film properties, such as resistivity, crystallinity and microstructure. Although the resistivity of the pure ALD-Ru film was ∼ 19 μΩ cm, the N-incorporated ALD-Ru films deposited with a gas ratio of 0.86 (N/Ru: ∼ 0.38) showed a resistivity of ∼ 340 μΩ cm, which increased continuously with increasing gas ratio. X-ray and electron diffraction revealed degradation in film crystallinity and decrease in grain size with increasing N incorporation into ALD-Ru films. Transmission electron microscopy showed that N-incorporated ALD-Ru films formed nanocrystalline and non-columnar grain structures. This is in contrast to that observed in the pure ALD-Ru film, which had a polycrystalline columnar grain structure. The growth rate of a representative N-incorporated Ru film deposited with a gas ratio of 0.86 showed a linear dependency on the number of ALD cycles; growth rate of 0.051 nm/cycle at short incubation cycles of ∼ 3. The step coverage was approximately 98% over the trench structure (aspect ratio: 4.5) with a top opening width of 25 nm. The direct plating of Cu on an optimized N-incorporated ALD-Ru film (5 nm in thickness) was possible. The structure of Cu (80 nm)/N-incorporated ALD-Ru (8 nm)/Si was found to be stable without the formation of copper silicide after annealing at 600 °C for 30 min. - Highlights: • Controlled growth of N

  6. Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

    Science.gov (United States)

    Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

    2017-11-22

    Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

  7. Antimicrobial Peptides, Infections and the Skin Barrier

    DEFF Research Database (Denmark)

    Clausen, Maja Lisa; Agner, Tove

    2016-01-01

    The skin serves as a strong barrier protecting us from invading pathogens and harmful organisms. An important part of this barrier comes from antimicrobial peptides (AMPs), which are small peptides expressed abundantly in the skin. AMPs are produced in the deeper layers of the epidermis and trans......The skin serves as a strong barrier protecting us from invading pathogens and harmful organisms. An important part of this barrier comes from antimicrobial peptides (AMPs), which are small peptides expressed abundantly in the skin. AMPs are produced in the deeper layers of the epidermis...

  8. Aluminium oxide barrier films on polymeric web and their conversion for packaging applications

    OpenAIRE

    Struller, CF; Kelly, PJ; Copeland, NJ; Tobin, V; Assender, HE; Holliday, CW; Read, SJ

    2013-01-01

    In recent years, inorganic transparent barrier layers such as aluminium oxide or silicon oxide deposited onto polymer films have emerged as an attractive alternative to polymer based transparent barrier layers for flexible food packaging materials. For this application, barrier properties against water vapour and oxygen are critical. Aluminium oxide coatings can provide good barrier levels at thicknesses in the nanometre range, compared to several micrometres for polymer-based barrier layers....

  9. Fast spatial atomic layer deposition of Al{sub 2}O{sub 3} at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hagyoung; Shin, Seokyoon; Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Choi, Yeongtae; Kim, Junghun; Kim, Sanghun; Chung, Seog Chul; Oh, Kiyoung [LIG INVENIA Co., Ltd., Seongnam, Gyeonggi 462-807 (Korea, Republic of)

    2016-01-15

    The authors developed a high throughput (70 Å/min) and scalable space-divided atomic layer deposition (ALD) system for thin film encapsulation (TFE) of flexible organic light-emitting diode (OLED) displays at low temperatures (<100 °C). In this paper, the authors report the excellent moisture barrier properties of Al{sub 2}O{sub 3} films deposited on 2G glass substrates of an industrially relevant size (370 × 470 mm{sup 2}) using the newly developed ALD system. This new ALD system reduced the ALD cycle time to less than 1 s. A growth rate of 0.9 Å/cycle was achieved using trimethylaluminum as an Al source and O{sub 3} as an O reactant. The morphological features and step coverage of the Al{sub 2}O{sub 3} films were investigated using field emission scanning electron microscopy. The chemical composition was analyzed using Auger electron spectroscopy. These deposited Al{sub 2}O{sub 3} films demonstrated a good optical transmittance higher than 95% in the visible region based on the ultraviolet visible spectrometer measurements. Water vapor transmission rate lower than the detection limit of the MOCON test (less than 3.0 × 10{sup −3} g/m{sup 2} day) were obtained for the flexible substrates. Based on these results, Al{sub 2}O{sub 3} deposited using our new high-throughput and scalable spatial ALD is considered a good candidate for preparation of TFE films of flexible OLEDs.

  10. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Science.gov (United States)

    Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

    2014-01-01

    In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

  11. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  12. Barrier Systems

    NARCIS (Netherlands)

    Heteren, S. van

    2015-01-01

    Barrier-system dynamics are a function of antecedent topography and substrate lithology, Relative sea-level (RSL) changes, sediment availability and type, climate, vegetation type and cover, and various aero- and hydrodynamic processes during fair-weather conditions and extreme events. Global change

  13. Information barriers

    International Nuclear Information System (INIS)

    Fuller, J.L.; Wolford, J.

    2001-01-01

    Full text: An information barrier (IB) consists of procedures and technology that prevent the release of sensitive information during a joint inspection of a sensitive nuclear item, and provides confidence that the measurement system into which it has been integrated functions exactly as designed and constructed. Work in the U.S. on radiation detection system information barriers dates back at least to 1990, even though the terminology is more recent. In January 1999 the Joint DoD-DOE Information Barrier Working Group was formed in the United States to help coordinate technical efforts related to information barrier R and D. This paper presents an overview of the efforts of this group, by its Chairs, as well as recommendations for further information barrier R and D. Progress on the demonstration of monitoring systems containing IBs is also provided. From the U.S. perspective, the basic, top-level functional requirements for the information barrier portion of an integrated radiation signature-information barrier inspection system are twofold: The host must be assured that his classified information is protected from disclosure to the inspecting party; and The inspecting party must be confident that the integrated inspection system measures, processes, and presents the radiation-signature-based measurement conclusion in an accurate and reproducible manner. It is the position of the United States that in the absence of any agreement to share classified nuclear weapons design information in the conduct of an inspection regime, the requirement to protect host country classified warhead design information is paramount and admits no tradeoff versus the confidence provided to the inspecting party in the accuracy and reproducibility of the measurements. The U.S. has reached an internal consensus on several critical design elements that define a general standard for radiation signature information barrier design. These criteria have stood the test of time under intense

  14. Barrier Engineered Quantum Dot Infrared Photodetectors

    Science.gov (United States)

    2015-06-01

    251108. 6. Barve, Ajit V., Saumya Sengupta, Jun Oh Kim, John Montoya , Brianna Klein, Mohammad Ali Shirazi, Marziyeh Zamiri et al., "Barrier selection... H . Kim, Z-B. Tian, and Sanjay Krishna. "Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices." (2013

  15. Floating barrier

    Energy Technology Data Exchange (ETDEWEB)

    1968-05-06

    This floating barrier consists of relatively long elements which can be connected to form a practically continuous assembly. Each element consists of an inflatable tube with an apron of certain height, made of impregnated fabric which is resistant to ocean water and also to hydrocarbons. Means for connecting one element to the following one, and means for attaching ballast to the apron are also provided.

  16. Highly Stable Sr-Free Cobaltite-Based Perovskite Cathodes Directly Assembled on a Barrier-Layer-Free Y2 O3 -ZrO2 Electrolyte of Solid Oxide Fuel Cells.

    Science.gov (United States)

    Ai, Na; Li, Na; Rickard, William D A; Cheng, Yi; Chen, Kongfa; Jiang, San Ping

    2017-03-09

    Direct assembly is a newly developed technique in which a cobaltite-based perovskite (CBP) cathode can be directly applied to a barrier-layer-free Y 2 O 3 -ZrO 2 (YSZ) electrolyte with no high-temperature pre-sintering steps. Solid oxide fuel cells (SOFCs) based on directly assembled CBPs such as La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ show high performance initially but degrade rapidly under SOFC operation conditions at 750 °C owing to Sr segregation and accumulation at the electrode/electrolyte interface. Herein, the performance and interface of Sr-free CBPs such as LaCoO 3-δ (LC) and Sm 0.95 CoO 3-δ (SmC) and their composite cathodes directly assembled on YSZ electrolyte was studied systematically. The LC electrode underwent performance degradation, most likely owing to cation demixing and accumulation of La on the YSZ electrolyte under polarization at 500 mA cm -2 and 750 °C. However, the performance and stability of LC electrodes could be substantially enhanced by the formation of LC-gadolinium-doped ceria (GDC) composite cathodes. Replacement of La by Sm increased the cell stability, and doping of 5 % Pd to form Sm 0.95 Co 0.95 Pd 0.05 O 3-δ (SmCPd) significantly improved the electrode activity. An anode-supported YSZ-electrolyte cell with a directly assembled SmCPd-GDC composite electrode exhibited a peak power density of 1.4 W cm -2 at 750 °C, and an excellent stability at 750 °C for over 240 h. The higher stability of SmC as compared to that of LC is most likely a result of the lower reactivity of SmC with YSZ. This study demonstrates the new opportunities in the design and development of intermediate-temperature SOFCs based on the directly assembled high-performance and durable Sr-free CBP cathodes. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. In vitro porcine blood-brain barrier model for permeability studies: pCEL-X software pKa(FLUX) method for aqueous boundary layer correction and detailed data analysis.

    Science.gov (United States)

    Yusof, Siti R; Avdeef, Alex; Abbott, N Joan

    2014-12-18

    In vitro blood-brain barrier (BBB) models from primary brain endothelial cells can closely resemble the in vivo BBB, offering valuable models to assay BBB functions and to screen potential central nervous system drugs. We have recently developed an in vitro BBB model using primary porcine brain endothelial cells. The model shows expression of tight junction proteins and high transendothelial electrical resistance, evidence for a restrictive paracellular pathway. Validation studies using small drug-like compounds demonstrated functional uptake and efflux transporters, showing the suitability of the model to assay drug permeability. However, one limitation of in vitro model permeability measurement is the presence of the aqueous boundary layer (ABL) resulting from inefficient stirring during the permeability assay. The ABL can be a rate-limiting step in permeation, particularly for lipophilic compounds, causing underestimation of the permeability. If the ABL effect is ignored, the permeability measured in vitro will not reflect the permeability in vivo. To address the issue, we explored the combination of in vitro permeability measurement using our porcine model with the pKa(FLUX) method in pCEL-X software to correct for the ABL effect and allow a detailed analysis of in vitro (transendothelial) permeability data, Papp. Published Papp using porcine models generated by our group and other groups are also analyzed. From the Papp, intrinsic transcellular permeability (P0) is derived by simultaneous refinement using a weighted nonlinear regression, taking into account permeability through the ABL, paracellular permeability and filter restrictions on permeation. The in vitro P0 derived for 22 compounds (35 measurements) showed good correlation with P0 derived from in situ brain perfusion data (r(2)=0.61). The analysis also gave evidence for carrier-mediated uptake of naloxone, propranolol and vinblastine. The combination of the in vitro porcine model and the software

  18. Smart parking barrier

    KAUST Repository

    Alharbi, Abdulrazaq M.

    2016-01-01

    positioning of the movable parking barrier, and a parking controller configured to initiate movement of the parking barrier, via the barrier drive. The movable parking barrier can be positioned between a first position that restricts access to the parking

  19. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

    International Nuclear Information System (INIS)

    Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O'Neill, Anthony; Horsfall, Alton; Goss, Jonathan; Cumpson, Peter

    2013-01-01

    Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

  20. In-situ formed Ce0.8Gd0.2O1.9 barrier layers on yttria stabilized zirconia backbones by infiltration - A promising path to high performing oxygen electrodes of solid oxide cell

    DEFF Research Database (Denmark)

    Ovtar, Simona; Chen, Ming; Samson, Alfred Junio

    2017-01-01

    Oxygen electrodes for solid oxide cells were prepared by a consecutive infiltration of a gadolinium doped ceria (Ce0.8Gd0.2O1.9, CGO) barrier layer and a lanthanum cobalt nickelate (La0.95Co0.4Ni0.6O3, LCN) electro catalyst layer into a porous yttrium doped zirconia (YSZ) backbone. The influences...... of the following parameters on the microstructure of the formed CGO barrier layer and on the electrochemical performance of the cells were studied: i) surfactants and wetting agents, ii) ceria/gadolinia coverage, iii) calcination profiles and iv) exposure temperature during testing. The infiltration process...... performance and only a small increase of the cell-resistance with increasing exposure temperatures during testing were obtained. A complete and homogenous covering of the YSZ backbone with Ce0.8Gd0.2O1.9 was found to be necessary to maintain high performance also at higher exposure temperatures (> 800 °C)....

  1. Magnetic tunnel junction device having an intermediate layer

    NARCIS (Netherlands)

    2001-01-01

    A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an

  2. Barrier mechanisms in the Drosophila blood-brain barrier.

    Science.gov (United States)

    Hindle, Samantha J; Bainton, Roland J

    2014-01-01

    The invertebrate blood-brain barrier (BBB) field is growing at a rapid pace and, in recent years, studies have shown a physiologic and molecular complexity that has begun to rival its vertebrate counterpart. Novel mechanisms of paracellular barrier maintenance through G-protein coupled receptor signaling were the first demonstrations of the complex adaptive mechanisms of barrier physiology. Building upon this work, the integrity of the invertebrate BBB has recently been shown to require coordinated function of all layers of the compound barrier structure, analogous to signaling between the layers of the vertebrate neurovascular unit. These findings strengthen the notion that many BBB mechanisms are conserved between vertebrates and invertebrates, and suggest that novel findings in invertebrate model organisms will have a significant impact on the understanding of vertebrate BBB functions. In this vein, important roles in coordinating localized and systemic signaling to dictate organism development and growth are beginning to show how the BBB can govern whole animal physiologies. This includes novel functions of BBB gap junctions in orchestrating synchronized neuroblast proliferation, and of BBB secreted antagonists of insulin receptor signaling. These advancements and others are pushing the field forward in exciting new directions. In this review, we provide a synopsis of invertebrate BBB anatomy and physiology, with a focus on insights from the past 5 years, and highlight important areas for future study.

  3. Novel thermal barrier coatings based on La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}/8YSZ double-ceramic-layer systems deposited by electron beam physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhenhua, E-mail: zhxuciac@yahoo.com.cn [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He Shimei; He Limin; Mu Rende; Huang Guanghong [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao Xueqiang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2011-03-17

    Research highlights: > LZ7C3 and YSZ have good chemical compatibility for the formation of DCL coating. > DCL coating has a longer lifetime than that of single layer coating of LZ7C3 or YSZ. > Similar TECs of LZ7C3 with YSZ coatings and YSZ coating with TGO layer. > Unique growth modes of columns within DCL coating. > Outward diffusion of Cr element (bond coat) into LZ7C3 layer. - Abstract: Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7} (LZ7C3) and yttria stabilized zirconia (YSZ) were deposited by electron beam-physical vapor deposition (EB-PVD). The thermal cycling test at 1373 K in an air furnace indicates the DCL coating has a much longer lifetime than the single layer LZ7C3 coating, and even longer than that of the single layer YSZ coating. The superior sintering-resistance of LZ7C3 coating, the similar thermal expansion behaviors of YSZ interlayer with LZ7C3 coating and thermally grown oxide (TGO) layer, and the unique growth modes of columns within DCL coating are all very helpful to the prolongation of thermal cycling life of DCL coating. The failure of DCL coating is mainly a result of the reduction-oxidation of cerium oxide, the crack initiation, propagation and extension, the abnormal oxidation of bond coat, the degradation of t'-phase in YSZ coating and the outward diffusion of Cr alloying element into LZ7C3 coating.

  4. Numerical simulations of capillary barrier field tests

    International Nuclear Information System (INIS)

    Morris, C.E.; Stormont, J.C.

    1997-01-01

    Numerical simulations of two capillary barrier systems tested in the field were conducted to determine if an unsaturated flow model could accurately represent the observed results. The field data was collected from two 7-m long, 1.2-m thick capillary barriers built on a 10% grade that were being tested to investigate their ability to laterally divert water downslope. One system had a homogeneous fine layer, while the fine soil of the second barrier was layered to increase its ability to laterally divert infiltrating moisture. The barriers were subjected first to constant infiltration while minimizing evaporative losses and then were exposed to ambient conditions. The continuous infiltration period of the field tests for the two barrier systems was modelled to determine the ability of an existing code to accurately represent capillary barrier behavior embodied in these two designs. Differences between the field test and the model data were found, but in general the simulations appeared to adequately reproduce the response of the test systems. Accounting for moisture retention hysteresis in the layered system will potentially lead to more accurate modelling results and is likely to be important when developing reasonable predictions of capillary barrier behavior

  5. Filamentary and diffuse barrier discharges

    International Nuclear Information System (INIS)

    Kogelschatz, U.

    2001-01-01

    Barrier discharges, sometimes also referred to as dielectric-barrier discharges or silent discharges, are characterized by the presence of at least one insulating layer in contact with the discharge between two planar or cylindrical electrodes connected to an ac power supply. The main advantage of this type of electrical discharge is, that non-equilibrium plasma conditions in atmospheric-pressure gases can be established in an economic and reliable way. This has led to a number of important applications including industrial ozone generation, surface modification of polymers, plasma chemical vapor deposition, excitation of CO 2 lasers, excimer lamps and, most recently, large-area flat plasma display panels. Depending on the application, the width of the discharge gap can range from less than 0.1 mm to about 100 mm and the applied frequency from below line frequency to several gigahertz. Typical materials used for the insulating layer (dielectric barrier) are glass, quartz, ceramics but also thin enamel or polymer layers

  6. Sprache als Barriere (Language as a Barrier)

    Science.gov (United States)

    Mattheier, Klaus

    1974-01-01

    The concept of language barrier has its derivations in the fields of dialectology, sociology and psychology. In contemporary usage however, the concept has two meanings i.e. regional-cultural barrier and socio-cultural barrier. (Text is in German.) (DS)

  7. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

    Science.gov (United States)

    Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT ~ 0.9 GHz, fMAX ~ 1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics. PMID:25295573

  8. Double-ceramic-layer thermal barrier coatings based on La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}/La{sub 2}Ce{sub 2}O{sub 7} deposited by electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Z.H. [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); He, L.M., E-mail: he_limin@yahoo.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Mu, R.D.; He, S.M.; Huang, G.H. [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao, X.Q., E-mail: xcao@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2010-03-15

    Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7} (LZ7C3) and La{sub 2}Ce{sub 2}O{sub 7} (LC) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, interdiffusion, surface and cross-sectional morphologies, cyclic oxidation behavior of DCL coating were studied. Energy dispersive spectroscopy and X-ray diffraction analyses indicate that both LZ7C3 and LC coatings are effectively fabricated by a single LZ7C3 ingot with properly controlling the deposition energy. The chemical compatibility of LC coating and thermally grown oxide (TGO) layer is unstable. LaAlO{sub 3} is formed due to the chemical reaction between LC and Al{sub 2}O{sub 3} which is the main composition of TGO layer. Additionally, the thermal cycling behavior of DCL coating is influenced by the interdiffusion of Zr and Ce between LZ7C3 and LC coatings. The failure of DCL coating is a result of the sintering of LZ7C3 coating surface, the chemical incompatibility of LC coating and TGO layer and the abnormal oxidation of bond coat. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL coating is an important development direction of TBCs.

  9. Permeability Barrier Generation in the Martian Lithosphere

    Science.gov (United States)

    Schools, Joe; Montési, Laurent

    2015-11-01

    Permeability barriers develop when a magma produced in the interior of a planet rises into the cooler lithosphere and crystallizes more rapidly than the lithosphere can deform (Sparks and Parmentier, 1991). Crystallization products may then clog the porous network in which melt is propagating, reducing the permeability to almost zero, i.e., forming a permeability barrier. Subsequent melts cannot cross the barrier. Permeability barriers have been useful to explain variations in crustal thickness at mid-ocean ridges on Earth (Magde et al., 1997; Hebert and Montési, 2011; Montési et al., 2011). We explore here under what conditions permeability barriers may form on Mars.We use the MELTS thermodynamic calculator (Ghiorso and Sack, 1995; Ghiorso et al., 2002; Asimow et al., 2004) in conjunction with estimated Martian mantle compositions (Morgan and Anders, 1979; Wänke and Dreibus, 1994; Lodders and Fegley, 1997; Sanloup et al., 1999; Taylor 2013) to model the formation of permeability barriers in the lithosphere of Mars. In order to represent potential past and present conditions of Mars, we vary the lithospheric thickness, mantle potential temperature (heat flux), oxygen fugacity, and water content.Our results show that permeability layers can develop in the thermal boundary layer of the simulated Martian lithosphere if the mantle potential temperature is higher than ~1500°C. The various Martian mantle compositions yield barriers in the same locations, under matching variable conditions. There is no significant difference in barrier location over the range of accepted Martian oxygen fugacity values. Water content is the most significant influence on barrier development as it reduces the temperature of crystallization, allowing melt to rise further into the lithosphere. Our lower temperature and thicker lithosphere model runs, which are likely the most similar to modern Mars, show no permeability barrier generation. Losing the possibility of having a permeability

  10. Richardson constant and electrostatics in transfer-free CVD grown few-layer MoS2/graphene barristor with Schottky barrier modulation >0.6eV

    Science.gov (United States)

    Jahangir, Ifat; Uddin, M. Ahsan; Singh, Amol K.; Koley, Goutam; Chandrashekhar, M. V. S.

    2017-10-01

    We demonstrate a large area MoS2/graphene barristor, using a transfer-free method for producing 3-5 monolayer (ML) thick MoS2. The gate-controlled diodes show good rectification, with an ON/OFF ratio of ˜103. The temperature dependent back-gated study reveals Richardson's coefficient to be 80.3 ± 18.4 A/cm2/K and a mean electron effective mass of (0.66 ± 0.15)m0. Capacitance and current based measurements show the effective barrier height to vary over a large range of 0.24-0.91 eV due to incomplete field screening through the thin MoS2. Finally, we show that this barristor shows significant visible photoresponse, scaling with the Schottky barrier height. A response time of ˜10 s suggests that photoconductive gain is present in this device, resulting in high external quantum efficiency.

  11. Dual layer hollow fiber sorbents: Concept, fabrication and characterization

    KAUST Repository

    Bhandari, Dhaval; Olanrewaju, Kayode O.; Bessho, Naoki; Breedveld, Victor; Koros, William J.

    2013-01-01

    and to ensure consistent sorption capacity over repeated cycles, a dense, thin polymer barrier layer on the fiber sorbents is needed to allow only thermal interactions between the sorbate loaded layer and the thermal regeneration fluid. This paper considers

  12. Simulation of thermo-Elastics Properties of Thermal Barrier Coatings ...

    African Journals Online (AJOL)

    Thermal barrier coatings are used to protect different parts in compressors and turbines from heat. They are generally composed of two layers, one metallic layer providing resistance to heat corrosion and oxidation, and one thermally insulating ceramic layer. Two different techniques are industrially used. Plasma spray ...

  13. Field study plan for alternate barriers

    International Nuclear Information System (INIS)

    Freeman, H.D.; Gee, G.W.; Relyea, J.F.

    1989-05-01

    Pacific Northwest Laboratory (PNL) is providing technical assistance in selecting, designing, evaluating, and demonstrating protective barriers. As part of this technical assistance effort, asphalt, clay, and chemical grout will be evaluated for use as alternate barriers. The purpose of the subsurface layer is to reduce the likelihood that extreme events (i.e., 100-year maximum storms, etc.) will cause significant drainage through the barrier. The tests on alternate barriers will include laboratory and field analysis of the subsurface layer performance. This field test plan outlines the activities required to test and design subsurface moisture barriers. The test plan covers activities completed in FY 1988 and planned through FY 1992 and includes a field-scale test of one or more of the alternate barriers to demonstrate full-scale application techniques and to provide performance data on a larger scale. Tests on asphalt, clay, and chemical grout were initiated in FY 1988 in small (30.5 cm diameter) tube-layer lysimeters. The parameters used for testing the materials were different for each one. The tests had to take into account the differences in material characteristics and response to change in conditions, as well as information provided by previous studies. 33 refs., 8 figs., 1 tab

  14. Model assessment of protective barrier designs

    International Nuclear Information System (INIS)

    Fayer, M.J.; Conbere, W.; Heller, P.R.; Gee, G.W.

    1985-11-01

    A protective barrier is being considered for use at the Hanford site to enhance the isolation of previously disposed radioactive wastes from infiltrating water, and plant and animal intrusion. This study is part of a research and development effort to design barriers and evaluate their performance in preventing drainage. A fine-textured soil (the Composite) was located on the Hanford site in sufficient quantity for use as the top layer of the protective barrier. A number of simulations were performed by Pacific Northwest Laboratory to analyze different designs of the barrier using the Composite soil as well as the finer-textured Ritzville silt loam and a slightly coarser soil (Coarse). Design variations included two rainfall rates (16.0 and 30.1 cm/y), the presence of plants, gravel mixed into the surface of the topsoil, an impermeable boundary under the topsoil, and moving the waste form from 10 to 20 m from the barrier edge. The final decision to use barriers for enhanced isolation of previously disposed wastes will be subject to decisions resulting from the completion of the Hanford Defense Waste Environmental Impact Statement, which addresses disposal of Hanford defense high-level and transuranic wastes. The one-dimensional simulation results indicate that each of the three soils, when used as the top layer of the protective barrier, can prevent drainage provided plants are present. Gravel amendments to the upper 30 cm of soil (without plants) reduced evaporation and allowed more water to drain

  15. Outer brain barriers in rat and human development

    DEFF Research Database (Denmark)

    Brøchner, Christian B; Holst, Camilla Bjørnbak; Møllgård, Kjeld

    2015-01-01

    Complex barriers at the brain's surface, particularly in development, are poorly defined. In the adult, arachnoid blood-cerebrospinal fluid (CSF) barrier separates the fenestrated dural vessels from the CSF by means of a cell layer joined by tight junctions. Outer CSF-brain barrier provides...... diffusion restriction between brain and subarachnoid CSF through an initial radial glial end feet layer covered with a pial surface layer. To further characterize these interfaces we examined embryonic rat brains from E10 to P0 and forebrains from human embryos and fetuses (6-21st weeks post...

  16. Intestinal epithelial barrier function and tight junction proteins with heat and exercise

    DEFF Research Database (Denmark)

    Dokladny, Karol; Zuhl, Micah N; Moseley, Pope L

    2016-01-01

    A single layer of enterocytes and tight junctions (intercellular multiprotein complexes) form the intestinal epithelial barrier that controls transport of molecules through transcellular and paracellular pathways. A dysfunctional or "leaky" intestinal tight junction barrier allows augmented perme...

  17. Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs

    Science.gov (United States)

    Figielski, T.; Morawski, A.; Wosinski, T.; Wrotek, S.; Makosa, A.; Lusakowska, E.; Story, T.; Sipatov, A. Yu.; Szczerbakow, A.; Grasza, K.; hide

    2002-01-01

    Perpendicular transport through single- and double-barrier heterostructures consisting of ferromagnetic EuS layers embedded into PbS matrix was investigated. Manifestations of both resonant tunneling and spin filtering through EuS barrier have been observed.

  18. Surface layer temperature inversion in the Bay of Bengal: Main characteristics and related mechanisms

    Digital Repository Service at National Institute of Oceanography (India)

    Pankajakshan, T.; Suresh, I.; Gautham, S.; PrasannaKumar, S.; Lengaigne, M.; Rao, R.R.; Neetu, S.; Hegde, A.

    Surface layer temperature inversion (SLTI), a warm layer sandwiched between surface and subsurface colder waters, has been reported to frequently occur in conjunction with barrier layers in the Bay of Bengal (BoB), with potentially commensurable...

  19. Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability

    International Nuclear Information System (INIS)

    Koike, J.; Wada, M.; Usui, T.; Nasu, H.; Takahashi, S.; Shimizu, N.; Yoshimaru, M.; Shibata, H.

    2006-01-01

    Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide

  20. Richards Barrier LA Reference Design Feature Evaluation

    International Nuclear Information System (INIS)

    N.E. Kramer

    1999-01-01

    The Richards Barrier is one of the design features of the repository to be considered for the License Application (LA), Richards was a soil scientist who first described the diversion of moisture between two materials with different hydrologic properties. In this report, a Richards Barrier is a special type of backfill with a fine-grained material (such as sand) overlaying a coarse-grained material (such as gravel). Water that enters an emplacement drift will first encounter the fine-grained material and be transported around the coarse-grained material covering the waste package, thus protecting the waste package from contact with most of the groundwater. The objective of this report is to discuss the benefits and liabilities to the repository by the inclusion of a Richards Barrier type backfill in emplacement drifts. The Richards Barrier can act as a barrier to water flow, can reduce the waste package material dissolution rate, limit mobilization of the radionuclides, and can provide structural protection for the waste package. The scope of this report is to: (1) Analyze the behavior of barrier materials following the intrusion of groundwater for influxes of 1 to 300 mm per year. The report will demonstrate diversion of groundwater intrusions into the barrier over an extended time period when seismic activity and consolidation may cause the potential for liquefaction and settlement of the Richards Barrier. (2) Review the thermal effects of the Richards Barrier on material behavior. (3) Analyze the effect of rockfall on the performance of the Richards Barrier and the depth of the barrier required to protect waste packages under the barrier. (4) Review radiological and heating conditions on placement of multiple layers of the barrier. Subsurface Nuclear Safety personnel will perform calculations to determine the radiation reduction-time relationship and shielding capacity of the barrier. (5) Evaluate the effects of ventilation on cooling of emplacement drifts and

  1. Large magnetocurrents in double-barrier tunneling transistors

    International Nuclear Information System (INIS)

    Lee, J.H.; Jun, K.-I.; Shin, K.-H.; Park, S.Y.; Hong, J.K.; Rhie, K.; Lee, B.C.

    2005-01-01

    Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 10 3 times larger than that of conventional MTT, since tunneling through AlO x barrier provides much larger current density than that through Schottky barrier

  2. Smart parking barrier

    KAUST Repository

    Alharbi, Abdulrazaq M.

    2016-05-06

    Various methods and systems are provided for smart parking barriers. In one example, among others, a smart parking barrier system includes a movable parking barrier located at one end of a parking space, a barrier drive configured to control positioning of the movable parking barrier, and a parking controller configured to initiate movement of the parking barrier, via the barrier drive. The movable parking barrier can be positioned between a first position that restricts access to the parking space and a second position that allows access to the parking space. The parking controller can initiate movement of the movable parking barrier in response to a positive identification of an individual allowed to use the parking space. The parking controller can identify the individual through, e.g., a RFID tag, a mobile device (e.g., a remote control, smartphone, tablet, etc.), an access card, biometric information, or other appropriate identifier.

  3. Application of polycrystalline diffusion barriers

    International Nuclear Information System (INIS)

    Tsymbal, V.A.; Kolupaev, I.N.

    2010-01-01

    Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi 2 ) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability polycrystalline and polyphase DB is made and recommendations for practical methods of increase of blocking properties PDB are made.

  4. Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

    International Nuclear Information System (INIS)

    Freeman, H.D.; Romine, R.A.

    1994-05-01

    The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers

  5. Hanford Permanent Isolation Barrier Program: Asphalt technology test plan

    Energy Technology Data Exchange (ETDEWEB)

    Freeman, H.D.; Romine, R.A.

    1994-05-01

    The Hanford Permanent Isolation Barriers use engineered layers of natural materials to create an integrated structure with backup protective features. The objective of current designs is to develop a maintenance-free permanent barrier that isolates wastes for a minimum of 1000 years by limiting water drainage to near-zero amounts. Asphalt is being used as an impermeable water diversion layer to provide a redundant layer within the overall barrier design. Data on asphalt barrier properties in a buried environment are not available for the required 100-year time frame. The purpose of this test plan is to outline the activities planned to obtain data with which to estimate performance of the asphalt layers.

  6. Nb and Pd co-doped La0.57Sr0.38Co0.19Fe0.665Nb0.095Pd0.05O3-δ as a stable, high performance electrode for barrier-layer-free Y2O3-ZrO2 electrolyte of solid oxide fuel cells

    Science.gov (United States)

    Chen, Kongfa; He, Shuai; Li, Na; Cheng, Yi; Ai, Na; Chen, Minle; Rickard, William D. A.; Zhang, Teng; Jiang, San Ping

    2018-02-01

    La0.6Sr0.2Co0.2Fe0.8O3-δ (LSCF) is the most intensively investigated high performance cathode for intermediate temperature solid oxide fuel cells (IT-SOFCs), but strontium segregation and migration at the electrode/electrolyte interface is a critical issue limiting the electrocatalytic activity and stability of LSCF based cathodes. Herein, we report a Nb and Pd co-doped LSCF (La0.57Sr0.38Co0.19Fe0.665Nb0.095Pd0.05O3-δ, LSCFNPd) perovskite as stable and active cathode on a barrier-layer-free anode-supported yttria-stabilized zirconia (YSZ) electrolyte cell using direct assembly method without pre-sintering at high temperatures. The cell exhibits a peak power density of 1.3 W cm-2 at 750 °C and excellent stability with no degradation during polarization at 500 mA cm-2 and 750 °C for 175 h. Microscopic and spectroscopic analysis show that the electrochemical polarization promotes the formation of electrode/electrolyte interface in operando and exsolution of Pd/PdO nanoparticles. The Nb doping in the B-site of LSCF significantly reduces the Sr surface segregation, enhancing the stability of the cathode, while the exsoluted Pd/PdO nanoparticles increases the electrocatalytic activity for the oxygen reduction reaction. The present study opens up a new route for the development of cobaltite-based perovskite cathodes with high activity and stability for barrier-layer-free YSZ electrolyte based IT-SOFCs.

  7. Alternative geochemical barrier materials

    International Nuclear Information System (INIS)

    1991-07-01

    Previous investigations of the effects of neutralization and reduction on uranium mill tailings pore fluids by the Technical Support Contractor indicated that arsenic, selenium, and molybdenum continue to remain in solution in all but reducing conditions. These hazardous constituents are present in groundwaters as oxyanions and, therefore, are not expected to be removed by adsorption into clays and most other soil constituents. It was decided to investigate the attenuation capacity of two commonly available crystalline iron oxides, taconite and scoria, and a zeolite, a network aluminosilicate with a cage structure. Columns of the candidate materials were exposed to solutions of individual constituents, including arsenic, molybdenum, selenium, and, uranium, and to the spiked tailings pore fluid from the Bodo Canyon disposal cell near Durango, Colorado. In addition to the single material columns, a homogeneous blend of the three materials and layers of the materials were exposed to spiked tailings pore fluids. The results of these experiments indicate that with the exception of molybdenum, the constituents of concern are attenuated by the taconite; however, they are not sufficiently attenuated to meet the groundwater protection standards applicable to the UMTRA Project. Therefore, the candidate barrier materials did not prove to be useful to the UMTRA Project for the cleanup of groundwaters

  8. Surface barrier research at the Hanford Site

    International Nuclear Information System (INIS)

    Gee, G.W.; Ward, A.L.; Fayer, M.J.

    1997-01-01

    At the DOE Hanford Site, a field-scale prototype surface barrier was constructed in 1994 over an existing waste site as a part of a CERCLA treatability test. The above-grade barrier consists of a fine-soil layer overlying coarse layers of sands, gravels, basalt rock (riprap), and a low permeability asphalt layer. Two sideslope configurations, clean-fill gravel on a 10:1 slope and basalt riprap on a 2:1 slope, were built and are being tested. Design considerations included: constructability; drainage and water balance monitoring, wind and water erosion control and monitoring; surface revegetation and biotic intrusion; subsidence and sideslope stability, and durability of the asphalt layer. The barrier is currently in the final year of a three-year test designed to answer specific questions related to stability and long-term performance. One half of the barrier is irrigated such that the total water applied, including precipitation, is 480 mm/yr (three times the long-term annual average). Each year for the past two years, an extreme precipitation event (71 mm in 8 hr) representing a 1,000-yr return storm was applied in late March, when soil water storage was at a maximum. While the protective sideslopes have drained significant amounts of water, the soil cover (2-m of silt-loam soil overlying coarse sand and rock) has never drained. During the past year there was no measurable surface runoff or wind erosion. This is attributed to extensive revegetation of the surface. In addition, the barrier elevation has shown a small increase of 2 to 3 cm that is attributed to a combination of root proliferation and freeze/thaw activity. Testing will continue through September 1997. Performance data from the prototype barrier will be used by DOE in site-closure decisions at Hanford

  9. Tritium permeation barriers for fusion technology

    International Nuclear Information System (INIS)

    Perujo, A.; Forcey, K.

    1994-01-01

    An important issue concerning the safety, feasibility and fueling (i.e., tritium breeding ratio and recovery from the breeding blanket) of a fusion reactor is the possible tritium leakages through the structural materials and in particular through those operating at high temperatures. The control of tritium permeation could be a critical factor in determining the viability of a future fusion power reactor. The formation of tritium permeation barriers to prevent the loss of tritium to the coolant by diffusion though the structural material seems to be the most practical method to minimize such losses. Many authors have discussed the formation of permeation barriers to reduce the leakage of hydrogen isotopes through proposed first wall and structural materials. In general, there are two routes for the formation of such a barrier, namely: the growth of oxide layers (e.g., Cr 2 O 3 , Al 2 O 3 , etc.) or the application of surface coatings. Non-metals are the most promising materials from the point of view of the formation of permeation barriers. Oxides such as Al 2 O 3 or Cr 2 O 3 or carbides such as SiC or TiC have been proposed. Amongst the metals only tungsten or gold are sufficiently less permeable than steel to warrant investigation as candidate materials for permeation barriers. It is of course possible to grow oxide layers on steel directly by heating in the atmosphere or under a variety of conditions (first route above). The direct oxidizing is normally done in an environment of open-quotes wet hydrogenclose quotes to promote the growth of chromia on, for example, nickel steels or ternary oxides on 316L to prevent corrosion. The application of surface layers (second route above), offers a greater range of materials for the formation of permeation barriers. In addition to reducing permeation, such layers should be adhesive, resistant to attack by corrosive breeder materials and should not crack during thermal cycling

  10. Method for applying a thin film barrier stack to a device with microstructures, and device provided with such a thin film barrier stack

    NARCIS (Netherlands)

    2005-01-01

    A method for applying a thin film barrier stack to a device with microstructures, such as, for instance, an OLED, wherein the thin film barrier stack forms a barrier to at least moisture and oxygen, wherein the stack is built up from a combination of org. and inorg. layers, characterized in that a

  11. Barrier cell sheath formation

    International Nuclear Information System (INIS)

    Kesner, J.

    1980-04-01

    The solution for electrostatic potential within a simply modeled tandem mirror thermal barrier is seen to exhibit a sheath at each edge of the cell. The formation of the sheath requires ion collisionality and the analysis assmes that the collisional trapping rate into the barrier is considerably slower than the barrier pump rate

  12. Barriers to fusion

    International Nuclear Information System (INIS)

    Berriman, A.C.; Butt, R.D.; Dasgupta, M.; Hinde, D.J.; Morton, C.R.; Newton, J.O.

    1999-01-01

    The fusion barrier is formed by the combination of the repulsive Coulomb and attractive nuclear forces. Recent research at the Australian National University has shown that when heavy nuclei collide, instead of a single fusion barrier, there is a set of fusion barriers. These arise due to intrinsic properties of the interacting nuclei such deformation, rotations and vibrations. Thus the range of barrier energies depends on the properties of both nuclei. The transfer of matter between nuclei, forming a neck, can also affect the fusion process. High precision data have been used to determine fusion barrier distributions for many nuclear reactions, leading to new insights into the fusion process

  13. Extremal surface barriers

    International Nuclear Information System (INIS)

    Engelhardt, Netta; Wall, Aron C.

    2014-01-01

    We present a generic condition for Lorentzian manifolds to have a barrier that limits the reach of boundary-anchored extremal surfaces of arbitrary dimension. We show that any surface with nonpositive extrinsic curvature is a barrier, in the sense that extremal surfaces cannot be continuously deformed past it. Furthermore, the outermost barrier surface has nonnegative extrinsic curvature. Under certain conditions, we show that the existence of trapped surfaces implies a barrier, and conversely. In the context of AdS/CFT, these barriers imply that it is impossible to reconstruct the entire bulk using extremal surfaces. We comment on the implications for the firewall controversy

  14. Safety- barrier diagrams

    DEFF Research Database (Denmark)

    Duijm, Nijs Jan

    2008-01-01

    Safety-barrier diagrams and the related so-called 'bow-tie' diagrams have become popular methods in risk analysis. This paper describes the syntax and principles for constructing consistent and valid safety-barrier diagrams. The relation of safety-barrier diagrams to other methods such as fault...... trees and Bayesian networks is discussed. A simple method for quantification of safety-barrier diagrams is proposed. It is concluded that safety-barrier diagrams provide a useful framework for an electronic data structure that integrates information from risk analysis with operational safety management....

  15. Safety-barrier diagrams

    DEFF Research Database (Denmark)

    Duijm, Nijs Jan

    2007-01-01

    Safety-barrier diagrams and the related so-called "bow-tie" diagrams have become popular methods in risk analysis. This paper describes the syntax and principles for constructing consistent and valid safety-barrier diagrams. The relation with other methods such as fault trees and Bayesian networks...... are discussed. A simple method for quantification of safety-barrier diagrams is proposed, including situations where safety barriers depend on shared common elements. It is concluded that safety-barrier diagrams provide a useful framework for an electronic data structure that integrates information from risk...... analysis with operational safety management....

  16. Electrical insulator assembly with oxygen permeation barrier

    Science.gov (United States)

    Van Der Beck, Roland R.; Bond, James A.

    1994-01-01

    A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

  17. Kiwifruit, mucins, and the gut barrier.

    Science.gov (United States)

    Moughan, Paul J; Rutherfurd, Shane M; Balan, Prabhu

    2013-01-01

    Kiwifruit has long been regarded in China, where it originated from, for its health properties and particularly in relation to digestion and general gut health. There are a number of physical and chemical properties of the fruit, including its dietary fiber content, the presence of raphides, its high water holding capacity and actinidin content, that suggest that kiwifruit may be effective in influencing gut mucin production and thus enhancing the integrity of the gut barrier. The mucous layer, which comprises mucins and other materials, overlying the mucosal epithelium, is an important component of the gut barrier. The gut barrier plays a crucial role in separating the host from the often noxious external environment. The mucous layer, which covers the entire gastrointestinal tract (GIT), is the front line of innate host defense. There have been few direct studies of the effect of kiwifruit ingestion on mucin production in the GIT, and findings that are available using animal models are somewhat inconsistent. Taking results for digesta mucin content, number of goblet cells, and mucin gene expression, together, it would seem that green kiwifruit and possibly gold kiwifruit do influence gut mucin production, and the kiwifruit as part of a balanced diet may help to maintain the mucous layer and gut barrier. More corroborative experimental evidence is needed, and studies need to be undertaken in humans. Copyright © 2013 Elsevier Inc. All rights reserved.

  18. Surface stability test plan for protective barriers

    International Nuclear Information System (INIS)

    Ligotke, M.W.

    1989-01-01

    Natural-material protective barriers for long-term isolation of buried waste have been identified as integral components of a plan to isolate a number of Hanford defense waste sites. Standards currently being developed for internal and external barrier performance will mandate a barrier surface layer that is resistant to the eolian erosion processes of wind erosion (deflation) and windborne particle deposition (formation of sand dunes). Thus, experiments are needed to measure rates of eolian erosion processes impacting those surfaces under different surface and climatological conditions. Data from these studies will provide information for use in the evaluation of selected surface layers as a means of providing stable cover over waste sites throughout the design life span of protective barriers. The multi-year test plan described in this plan is directed at understanding processes of wind erosion and windborne particle deposition, providing measurements of erosion rates for models, and suggesting construction materials and methods for reducing the effect of long-term eolian erosion on the barrier. Specifically, this plan describes possible methods to measure rates of eolian erosion, including field and laboratory procedure. Advantages and disadvantages of laboratory (wind tunnel) tests are discussed, and continued wind tunnel tests are recommended for wind erosion studies. A comparison between field and wind tunnel erosive forces is discussed. Plans for testing surfaces are described. Guidance is also presented for studying the processes controlling sand dune and blowout formation. 24 refs., 7 figs., 3 tabs

  19. Permanent isolation surface barrier development plan

    International Nuclear Information System (INIS)

    Wing, N.R.

    1994-01-01

    The exhumation and treatment of wastes may not always be the preferred alternative in the remediation of a waste site. In-place disposal alternatives, under certain circumstances, may be the most desirable alternatives to use in the protection of human health and the environment. The implementation of an in-place disposal alternative will likely require some type of protective covering that will provide long-term isolation of the wastes from the accessible environment. Even if the wastes are exhumed and treated, a long-term barrier may still be needed to adequately dispose of the treated wastes or any remaining waste residuals. Currently, no open-quotes provenclose quotes long-term barrier is available. The Hanford Site Permanent Isolation Surface Barrier Development Program (BDP) was organized to develop the technology needed to provide a long-term surface barrier capability for the Hanford Site. The permanent isolation barrier technology also could be used at other sites. Permanent isolation barriers use engineered layers of natural materials to create an integrated structure with redundant protective features. Drawings of conceptual permanent isolation surface barriers are shown. The natural construction materials (e.g., fine soil, sand, gravel, riprap, asphalt) have been selected to optimize barrier performance and longevity. The objective of current designs is to use natural materials to develop a maintenance-free permanent isolation surface barrier that isolates wastes for a minimum of 1,000 years by limiting water drainage to near-zero amounts; reducing the likelihood of plant, animal, and human intrusion; controlling the exhalation of noxious gases; and minimizing erosion-related problems

  20. Permanent isolation surface barrier development plan

    Energy Technology Data Exchange (ETDEWEB)

    Wing, N.R.

    1994-01-01

    The exhumation and treatment of wastes may not always be the preferred alternative in the remediation of a waste site. In-place disposal alternatives, under certain circumstances, may be the most desirable alternatives to use in the protection of human health and the environment. The implementation of an in-place disposal alternative will likely require some type of protective covering that will provide long-term isolation of the wastes from the accessible environment. Even if the wastes are exhumed and treated, a long-term barrier may still be needed to adequately dispose of the treated wastes or any remaining waste residuals. Currently, no {open_quotes}proven{close_quotes} long-term barrier is available. The Hanford Site Permanent Isolation Surface Barrier Development Program (BDP) was organized to develop the technology needed to provide a long-term surface barrier capability for the Hanford Site. The permanent isolation barrier technology also could be used at other sites. Permanent isolation barriers use engineered layers of natural materials to create an integrated structure with redundant protective features. Drawings of conceptual permanent isolation surface barriers are shown. The natural construction materials (e.g., fine soil, sand, gravel, riprap, asphalt) have been selected to optimize barrier performance and longevity. The objective of current designs is to use natural materials to develop a maintenance-free permanent isolation surface barrier that isolates wastes for a minimum of 1,000 years by limiting water drainage to near-zero amounts; reducing the likelihood of plant, animal, and human intrusion; controlling the exhalation of noxious gases; and minimizing erosion-related problems.

  1. Barrier penetration database

    International Nuclear Information System (INIS)

    Fainberg, A.; Bieber, A.M. Jr.

    1978-11-01

    This document is intended to supply the NRC and nuclear power plant licensees with basic data on the times required to penetrate forcibly the types of barriers commonly found in nuclear plants. These times are necessary for design and evaluation of the physical protection system required under 10CFR73.55. Each barrier listed is described in detail. Minor variations in basic barrier construction that result in the same penetration time, are also described

  2. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

  3. Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

    Science.gov (United States)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

  4. Transport barriers in plasmas

    International Nuclear Information System (INIS)

    Caldas, I L; Szezech, J D Jr; Kroetz, T; Marcus, F A; Roberto, M; Viana, R L; Lopes, S R

    2012-01-01

    We discuss the creation of transport barriers in magnetically confined plasmas with non monotonic equilibrium radial profiles. These barriers reduce the transport in the shearless region (i.e., where the twist condition does not hold). For the chaotic motion of particles in an equilibrium electric field with a nonmonotonic radial profile, perturbed by electrostatic waves, we show that a nontwist transport barrier can be created in the plasma by modifying the electric field radial profile. We also show non twist barriers in chaotic magnetic field line transport in the plasma near to the tokamak wall with resonant modes due to electric currents in external coils.

  5. Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

    Science.gov (United States)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

  6. Structuring unbreakable hydrophobic barriers in paper

    Science.gov (United States)

    Nargang, Tobias M.; Kotz, Frederik; Rapp, Bastian E.

    2018-02-01

    Hydrophobic barriers are one of the key elements of microfluidic paper based analytical devices (μPADs).μPADs are simple and cost efficient and they can be carried out without the need of high standard laboratories. To carry out such a test a method is needed to create stable hydrophobic barriers. Commonly used methods like printing wax or polystyrene have the major drawback that these barriers are stiff and break if bended which means they will no longer be able to retain a liquid sample. Here we present silanes to structure hydrophobic barriers via polycondensation and show a silanization method which combines the advantages of flexible silane/siloxane layers with the short processing times of UV-light based structuring. The barriers are created by using methoxy silanes which are mixed with a photo acid generator (PAG) as photoinitiator. Also a photosensitizer was given to the mixture to increase the effectiveness of the PAG. After the PAG is activated by UV-light the silane is hydrolyzed and coupled to the cellulose via polycondensation. The created hydrophobic barriers are highly stable and do not break if being bended.

  7. Biointrusion test plan for the Permanent Isolation Surface Barrier Prototype

    International Nuclear Information System (INIS)

    Link, S.O.; Cadwell, L.L.; Brandt, C.A.; Downs, J.L.; Rossi, R.E.; Gee, G.W.

    1994-04-01

    This document provides a testing and monitoring plan for the biological component of the prototype barrier slated for construction at the Hanford Site. The prototype barrier is an aboveground structure engineered to demonstrate the basic features of an earthen cover system. It is designed to permanently isolate waste from the biosphere. The features of the barrier include multiple layers of soil and rock materials and a low-permeability asphalt sublayer. The surface of the barrier consists of silt loam soil, covered with plants. The barrier sides are reinforced with rock or coarse earthen-fill to protect against wind and water erosion. The sublayers inhibit plant and animal intrusion and percolation of water. A series of tests will be conducted on the prototype barrier over the next several years to evaluate barrier performance under extreme climatic conditions. Plants and animals will play a significant role in the hydrologic and water and wind erosion characteristics of the prototype barrier. Studies on the biological component of the prototype barrier will include work on the initial revegetation of the surface, continued monitoring of the developing plant community, rooting depth and dispersion in the context of biointrusion potential, the role of plants in the hydrology of the surface and toe regions of the barrier, the role of plants in stabilizing the surface against water and wind erosion, and the role of burrowing animals in the hydrology and water and wind erosion of the barrier

  8. Layered materials

    Science.gov (United States)

    Johnson, David; Clarke, Simon; Wiley, John; Koumoto, Kunihito

    2014-06-01

    Layered compounds, materials with a large anisotropy to their bonding, electrical and/or magnetic properties, have been important in the development of solid state chemistry, physics and engineering applications. Layered materials were the initial test bed where chemists developed intercalation chemistry that evolved into the field of topochemical reactions where researchers are able to perform sequential steps to arrive at kinetically stable products that cannot be directly prepared by other approaches. Physicists have used layered compounds to discover and understand novel phenomena made more apparent through reduced dimensionality. The discovery of charge and spin density waves and more recently the remarkable discovery in condensed matter physics of the two-dimensional topological insulating state were discovered in two-dimensional materials. The understanding developed in two-dimensional materials enabled subsequent extension of these and other phenomena into three-dimensional materials. Layered compounds have also been used in many technologies as engineers and scientists used their unique properties to solve challenging technical problems (low temperature ion conduction for batteries, easy shear planes for lubrication in vacuum, edge decorated catalyst sites for catalytic removal of sulfur from oil, etc). The articles that are published in this issue provide an excellent overview of the spectrum of activities that are being pursued, as well as an introduction to some of the most established achievements in the field. Clusters of papers discussing thermoelectric properties, electronic structure and transport properties, growth of single two-dimensional layers, intercalation and more extensive topochemical reactions and the interleaving of two structures to form new materials highlight the breadth of current research in this area. These papers will hopefully serve as a useful guideline for the interested reader to different important aspects in this field and

  9. Hanford protective barriers program: Status of asphalt barrier studies - FY 1989

    International Nuclear Information System (INIS)

    Freeman, H.D.; Gee, G.W.

    1989-11-01

    The Hanford Protective Barrier Program is evaluating alternate barriers to provide a means of meeting stringent water infiltration requirements. One type of alternate barrier being considered is an asphalt-based layer, 1.3 to 15 cm thick. Evaluations of these barriers were initiated in FY 1988, and, based on laboratory studies, two asphalt formulations were selected for further testing in small-tube lysimeters: a hot rubberized asphalt and an admixture of cationic asphalt emulsion and concrete sand containing 24 wt% residual asphalt. Eight lysimeters containing asphalt seals were installed as part of the Small Tube Lysimeter Test Facility on the Hanford Site. Two control lysimeters containing Hanford sand with a surface gravel treatment were also installed for comparison. 5 refs., 13 figs., 1 tab

  10. Converse Barrier Certificate Theorems

    DEFF Research Database (Denmark)

    Wisniewski, Rafael; Sloth, Christoffer

    2016-01-01

    This paper shows that a barrier certificate exists for any safe dynamical system. Specifically, we prove converse barrier certificate theorems for a class of structurally stable dynamical systems. Other authors have developed a related result by assuming that the dynamical system has neither...

  11. Skin barrier function

    DEFF Research Database (Denmark)

    2016-01-01

    Renowned experts present the latest knowledge Although a very fragile structure, the skin barrier is probably one of the most important organs of the body. Inward/out it is responsible for body integrity and outward/in for keeping microbes, chemicals, and allergens from penetrating the skin. Since...... the role of barrier integrity in atopic dermatitis and the relationship to filaggrin mutations was discovered a decade ago, research focus has been on the skin barrier, and numerous new publications have become available. This book is an interdisciplinary update offering a wide range of information...... on the subject. It covers new basic research on skin markers, including results on filaggrin and on methods for the assessment of the barrier function. Biological variation and aspects of skin barrier function restoration are discussed as well. Further sections are dedicated to clinical implications of skin...

  12. Barriers to the future

    Energy Technology Data Exchange (ETDEWEB)

    Massey, C T

    1986-09-01

    Opportunities for the British coal industry seem vast yet there are still barriers to progress. Seven areas are identified and discussed: mining mobility (for example, longwall mining systems are rigid and inflexible compared with American stall and pillar working); mine structure (many mines are more suitable to pit ponies than to large pieces of equipment); financial barriers (Government requires the industry to break even in 1987/88); personnel barriers (less specialization, better use of skills); safety barriers (increased use of remote control, ergonomics and robotics to protect workers); microelectronic management (nationalization has cushioned management from the market place; there is a need for a more multidisciplinary approach to the industry); and legal barriers (most legislation in the past has been in response to accidents; legislation external to the industry but affecting it is more fundamental).

  13. Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films

    Energy Technology Data Exchange (ETDEWEB)

    Birringer, Ryan P.; Dauskardt, Reinhold H. [Department of Materials Science and Engineering, Stanford University, Durand Building, Stanford, California 94305-4034 (United States); Shaviv, Roey [Novellus Systems Inc., 4000 North First Street, San Jose, California 95134 (United States); Geiss, Roy H.; Read, David T. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2011-08-15

    The effects of electroplating chemistry and dielectric diffusion barrier composition on copper voiding and barrier adhesion are reported. Adhesion was quantified using the four-point bend thin film adhesion technique, and voiding in the Cu films was quantified using scanning electron microscopy. A total of 12 different film stacks were investigated, including three different Cu electroplating chemistries and four different barrier materials (SiN, N-doped SiC, O-doped SiC, and dual-layer SiC). Both plating chemistry and barrier composition have a large effect on interface adhesion and voiding in the Cu film. X-ray photoelectron spectroscopy was used to investigate the segregation of Cu electroplating impurities, such as S and Cl, to the Cu/barrier interface. Secondary ion mass spectrometry was used to quantify oxygen content at the Cu/barrier interface in a subset of samples. This interface oxygen content is correlated with measured adhesion values.

  14. The role of plants on isolation barrier systems

    International Nuclear Information System (INIS)

    Link, S.O.; Downs, J.L.; Waugh, W.J.

    1994-11-01

    Surface barriers are used to isolate buried wastes from the environment. Most have been built for short-term isolation. The need to isolate radioactive wastes from the environment requires that the functional integrity of a barrier be maintained for thousands of years. Barrier function strongly depends on vegetation. Plants reduce wind and water erosion and minimize drainage, but may transport contaminants if roots extend into buried wastes. Our review of the function of plants on surface barriers focuses on the role of plants across mesic to arid environments and gives special consideration to studies done at Hanford. The Hanford Barrier Development Program was created to design and test an earthen cover system to inhibit water infiltration, plant and animal intrusion, and wind and water erosion, while isolating buried wastes for at least 1000 years. Studies at the Hanford have shown that plants will significantly interact with the barrier. Plants transpire soil water back into the atmosphere. Deep-rooted perennials best recycle water; soil water may drain through the root zone of shallow-rooted annuals. Lysimeter studies indicate that a surface layer of fine soil with deep-rooted plants precludes drainage even with three times normal precipitation. The presence of vegetation greatly reduces water and wind erosion, but deep-rooted plants pose a threat of biointrusion and contaminant transport. The Hanford barrier includes a buried rock layer and asphalt layer to prevent biointrusion

  15. Homoepitaxial graphene tunnel barriers for spin transport

    Directory of Open Access Journals (Sweden)

    Adam L. Friedman

    2016-05-01

    Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  16. Homoepitaxial graphene tunnel barriers for spin transport

    Science.gov (United States)

    Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

    2016-05-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  17. Modified geometry three-layered tablet as a platform for class II ...

    African Journals Online (AJOL)

    shape tablet composed of a core layer matrix made mainly of the enteric polymer hydroxypropyl methylcellulose acetate succinate and two barrier layers on either sides made of ethylcellulose. He showed that the system is capable of providing a.

  18. Vehicle barrier systems

    International Nuclear Information System (INIS)

    Sena, P.A.

    1986-01-01

    The ground vehicle is one of the most effective tools available to an adversary force. Vehicles can be used to penetrate many types of perimeter barriers, transport equipment and personnel rapidly over long distances, and deliver large amounts of explosives directly to facilities in suicide missions. The function of a vehicle barrier system is to detain or disable a defined threat vehicle at a selected distance from a protected facility. Numerous facilities are installing, or planning to install, vehicle barrier systems and many of these facilities are requesting guidance to do so adequately. Therefore, vehicle barriers are being evaluated to determine their stopping capabilities so that systems can be designed that are both balanced and capable of providing a desired degree of protection. Equally important, many of the considerations that should be taken into account when establishing a vehicle barrier system have been identified. These considerations which pertain to site preparation, barrier selection, system integration and operation, and vehicle/barrier interaction, are discussed in this paper

  19. Copper diffusion in TaN-based thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Nazon, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fraisse, B. [Laboratoire Structure, Proprietes et Modelisation des Solides (UMR 8580), Ecole Centrale de Paris, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Sarradin, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fries, S.G. [SGF Scientific Consultancy, Arndt str.9, D-52064 Aachen (Germany); Tedenac, J.C. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Frety, N. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France)], E-mail: Nicole.Frety@univ-montp2.fr

    2008-07-15

    The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.

  20. Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications

    NARCIS (Netherlands)

    Steudel, S.; van der Steen, J.L.P.J.; Nag, M.; Ke, T.H.; Smout, S.; Bel, T.; van Diesen, K.; de Haas, G.; Maas, J.; de Riet, J.; Rovers, M.; Verbeek, R.; Huang, Y.Y.; Chiang, S.C.; Ameys, M.; De Roose, F.; Dehaene, W.; Genoe, J.; Heremans, P.; Gelinck, G.H.; Kronemeijer, A.J.

    2017-01-01

    We present a qHD (960 × 540 with three sub-pixels) top-emitting active-matrix organic light-emitting diode display with a 340-ppi resolution using a self-aligned IGZO thin-film transistor backplane on polyimide foil with a humidity barrier. The back plane process flow is based on a seven-layer

  1. Converse Barrier Certificate Theorem

    DEFF Research Database (Denmark)

    Wisniewski, Rafael; Sloth, Christoffer

    2013-01-01

    This paper presents a converse barrier certificate theorem for a generic dynamical system.We show that a barrier certificate exists for any safe dynamical system defined on a compact manifold. Other authors have developed a related result, by assuming that the dynamical system has no singular...... points in the considered subset of the state space. In this paper, we redefine the standard notion of safety to comply with generic dynamical systems with multiple singularities. Afterwards, we prove the converse barrier certificate theorem and illustrate the differences between ours and previous work...

  2. InGaP Heterojunction Barrier Solar Cells

    Science.gov (United States)

    Welser, Roger E. (Inventor)

    2014-01-01

    A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

  3. Surface layer effects on waste glass corrosion

    International Nuclear Information System (INIS)

    Feng, X.

    1993-01-01

    Water contact subjects waste glass to chemical attack that results in the formation of surface alteration layers. Two principal hypotheses have been advanced concerning the effect of surface alteration layers on continued glass corrosion: (1) they act as a mass transport barrier and (2) they influence the chemical affinity of the glass reaction. In general, transport barrier effects have been found to be less important than affinity effects in the corrosion of most high-level nuclear waste glasses. However, they can be important under some circumstances, for example, in a very alkaline solution, in leachants containing Mg ions, or under conditions where the matrix dissolution rate is very low. The latter suggests that physical barrier effect may affect the long-term glass dissolution rate. Surface layers influence glass reaction affinity through the effects of the altered glass and secondary phases on the solution chemistry. The reaction affinity may be controlled by various precipitates and crystalline phases, amorphous silica phases, gel layer, or all the components of the glass. The surface alteration layers influence radionuclide release mainly through colloid formation, crystalline phase incorporation, and gel layer retention. This paper reviews current understanding and uncertainties

  4. Numerical investigation of dielectric barrier discharges

    Science.gov (United States)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  5. Double Layer Dynamics in a Collisionless Magnetoplasma

    DEFF Research Database (Denmark)

    Iizuka, S.; Michelsen, Poul; Juul Rasmussen, Jens

    and propagation of a double layer. The period of the oscillations is determined by the propagation length of the double layer. The current is limited during the propagation of the double layer by a growing negative potential barrier formed on the low potential tail. Similar phenomena appear when a potential......An experimental investigation of the dynamics of double layers is presented. The experiments are performed in a Q-machine plasma and the double layers are generated by applying a positive step potential to a cold collector plate terminating the plasma column. The double layer is created...... at the grounded plasma source just after the pulse is applied and it propagates towards the collector with a speed around the ion acoustic speed. When the collector is biased positively, large oscillations are obserced in the plasma current. These oscillations are found to be related to a recurring formation...

  6. Information barriers and authentication

    International Nuclear Information System (INIS)

    MacArthur, D.W.; Wolford, J.K.

    2001-01-01

    Acceptance of nuclear materials into a monitoring regime is complicated if the materials are in classified shapes or have classified composition. An attribute measurement system with an information barrier can be emplo,yed to generate an unclassified display from classified measurements. This information barrier must meet two criteria: (1) classified information cannot be released to the monitoring party, and (2) the monitoring party must be convinced that the unclassified output accurately represents the classified input. Criterion 1 is critical to the host country to protect the classified information. Criterion 2 is critical to the monitoring party and is often termed the 'authentication problem.' Thus, the necessity for authentication of a measurement system with an information barrier stems directly from the description of a useful information barrier. Authentication issues must be continually addressed during the entire development lifecycle of the measurement system as opposed to being applied only after the system is built.

  7. Barrier Infrared Detector (BIRD)

    Data.gov (United States)

    National Aeronautics and Space Administration — A recent breakthrough in MWIR detector design, has resulted in a high operating temperature (HOT) barrier infrared detector (BIRD) that is capable of spectral...

  8. Protective barrier development: Overview

    International Nuclear Information System (INIS)

    Wing, N.R.; Gee, G.W.

    1990-01-01

    Protective barrier and warning marker systems are being developed to isolate wastes disposed of near the earth's surface at the Hanford Site. The barrier is designed to function in an arid to semiarid climate, to limit infiltration and percolation of water through the waste zone to near-zero, to be maintenance free, and to last up to 10,000 yr. Natural materials (e.g., fine soil, sand, gravel, riprap, clay, asphalt) have been selected to optimize barrier performance and longevity and to create an integrated structure with redundant features. These materials isolate wastes by limiting water drainage; reducing the likelihood of plant, animal, and human intrusion; controlling emission of noxious gases; and minimizing erosion. Westinghouse Hanford Company and Pacific Northwest Laboratory efforts to assess the performance of various barrier and marker designs will be discussed

  9. Engineered barriers: current status

    International Nuclear Information System (INIS)

    Atkinson, A.; Marsh, G.P.

    1988-01-01

    This report summarises the current state of research relevant to assessing the performance of engineered barriers made of steel and concrete in radioactive waste repositories. The objective of these barriers is to contain the radionuclides within them by providing both physical and chemical impediment to their release. The physical barriers are of most value for highly soluble isotopes with relatively short half-lives (eg 137 Cs), since they can provide containment until a large fraction of the activity has decayed. In addition they can facilitate retrievability for some period after disposal. The chemical barriers operate by beneficial conditioning of the near field groundwater and providing sites for sorption of radionuclides. Both of these reduce the aqueous concentration of radionuclides in the near field. (author)

  10. Skin barrier composition

    International Nuclear Information System (INIS)

    Osburn, F.G.

    1985-01-01

    A skin barrier composition comprises a mixture of a copolymer resin of ethylene and vinyl acetate (EVA), and a water-insoluble dry tack-providing elastomer such as polyisobutylene. The composition after mixing and molding, is subjected to ionizing irradiation to form cross-linked polymer networks of the EVA. The compositions have exceptional properties for use as barrier sheets, rings, or strips in ostomy, wound drainage, and incontinence devices. (author)

  11. Skin barrier composition

    Energy Technology Data Exchange (ETDEWEB)

    Osburn, F G

    1985-06-12

    A skin barrier composition comprises a mixture of a copolymer resin of ethylene and vinyl acetate (EVA), and a water-insoluble dry tack-providing elastomer such as polyisobutylene. The composition after mixing and molding, is subjected to ionizing irradiation to form cross-linked polymer networks of the EVA. The compositions have exceptional properties for use as barrier sheets, rings, or strips in ostomy, wound drainage, and incontinence devices.

  12. Cathode-Electrolyte Interfaces with CGO Barrier Layers in SOFC

    DEFF Research Database (Denmark)

    Knibbe, Ruth; Hjelm, Johan; Menon, Mohan

    2010-01-01

    Electron microscopy characterization across the cathode–electrolyte interface of two different types of intermediate temperature solid oxide fuel cells (IT-SOFC) is performed to understand the origin of the cell performance disparity. One IT-SOFC cell had a sprayed-cosintered Ce0.90Gd0.01O1.95 (CGO...

  13. Remote forcing annihilates barrier layer in southeastern Arabian Sea

    Digital Repository Service at National Institute of Oceanography (India)

    Shenoi, S.S.C.; Shankar, D.; Shetye, S.R.

    - surements were made every two hours and have been l- tered with a 25-hour running mean. -12 -8 -4 0 4 8 12 MSLA (TSL) MSLA (coast) Sea level (cm) | | | | | 150 155 160 165 170 175 Dyn. height (cm)Dyn. ht. (TSL) 0 4 8 12 Wind speed (ms -1 ) Wind (TSL) Wind...

  14. Polymer/layered silicates nanocomposites for barrier technology

    CSIR Research Space (South Africa)

    Labuschagne, Philip W

    2012-02-01

    Full Text Available and metals, is their relatively high permeability to gases and vapors. Specifically in food and beverage packaging, low permeability to oxygen is critical. This area of research has challenged polymer scientists, material scientists, physicists, and chemists...

  15. A method of producing a multilayer barrier structure for a solid oxide fuel cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention provides a method of producing a multilayer barrier structure for a solid oxide cell stack, comprising the steps of: - providing a metal interconnect, wherein the metal interconnect is a ferritic stainless steel layer; - applying a first metal oxide layer on said metal...... oxide; and - reacting the metal oxide in said first metal oxide layer with the metal of said metal interconnect during the SOC-stack initialisation, and a solid oxide stack comprising an anode contact layer and support structure, an anode layer, an electrolyte layer, a cathode layer, a cathode contact...... layer, a metallic interconnect, and a multilayer barrier structure which is obtainable by the above method and through an initialisation step, which is carried out under controlled conditions for atmosphere composition and current load, which depends on the layer composition facilitating the formation...

  16. Environmental barrier coating

    Science.gov (United States)

    Pujari, Vimal K.; Vartabedian, Ara; Collins, William T.; Woolley, David; Bateman, Charles

    2012-12-18

    The present invention relates generally to a multi-layered article suitable for service in severe environments. The article may be formed of a substrate, such as silicon carbide and/or silicon nitride. The substrate may have a first layer of a mixture of a rare earth silicate and Cordierite. The substrate may also have a second layer of a rare earth silicate or a mixture of a rare earth silicate and cordierite.

  17. Graphene-based stretchable and transparent moisture barrier

    Science.gov (United States)

    Won, Sejeong; Van Lam, Do; Lee, Jin Young; Jung, Hyun-June; Hur, Min; Kim, Kwang-Seop; Lee, Hak-Joo; Kim, Jae-Hyun

    2018-03-01

    We propose an alumina-deposited double-layer graphene (2LG) as a transparent, scalable, and stretchable barrier against moisture; this barrier is indispensable for foldable or stretchable organic displays and electronics. Both the barrier property and stretchability were significantly enhanced through the introduction of 2LG between alumina and a polymeric substrate. 2LG with negligible polymeric residues was coated on the polymeric substrate via a scalable dry transfer method in a roll-to-roll manner; an alumina layer was deposited on the graphene via atomic layer deposition. The effect of the graphene layer on crack generation in the alumina layer was systematically studied under external strain using an in situ micro-tensile tester, and correlations between the deformation-induced defects and water vapor transmission rate were quantitatively analyzed. The enhanced stretchability of alumina-deposited 2LG originated from the interlayer sliding between the graphene layers, which resulted in the crack density of the alumina layer being reduced under external strain.

  18. Horizontal Acoustic Barriers for Protection from Seismic Waves

    Directory of Open Access Journals (Sweden)

    Sergey V. Kuznetsov

    2011-01-01

    Full Text Available The basic idea of a seismic barrier is to protect an area occupied by a building or a group of buildings from seismic waves. Depending on nature of seismic waves that are most probable in a specific region, different kinds of seismic barriers can be suggested. Herein, we consider a kind of a seismic barrier that represents a relatively thin surface layer that prevents surface seismic waves from propagating. The ideas for these barriers are based on one Chadwick's result concerning nonpropagation condition for Rayleigh waves in a clamped half-space, and Love's theorem that describes condition of nonexistence for Love waves. The numerical simulations reveal that to be effective the length of the horizontal barriers should be comparable to the typical wavelength.

  19. Metallographic techniques for evaluation of thermal barrier coatings

    Science.gov (United States)

    Brindley, William J.; Leonhardt, Todd A.

    1990-01-01

    The performance of ceramic thermal barrier coatings is strongly dependent on the amount and shape of the porosity in the coating. Current metallographic techniques do not provide polished surfaces that are adequate for a repeatable interpretation of the coating structures. A technique recently developed at NASA-Lewis for preparation of thermal barrier coating sections combines epoxy impregnation, careful sectioning and polishing, and interference layering to provide previously unobtainable information on processing-induced porosity. In fact, increased contrast and less ambiguous structure developed by the method make automatic quantitative metallography a viable option for characterizing thermal barrier coating structures.

  20. On the performance of capillary barriers as landfill cover

    Directory of Open Access Journals (Sweden)

    M. Kämpf

    1997-01-01

    Full Text Available Landfills and waste heaps require an engineered surface cover upon closure. The capping system can vary from a simple soil cover to multiple layers of earth and geosynthetic materials. Conventional design features a compacted soil layer, which suffers from drying out and cracking, as well as root and animal intrusion. Capillary barriers consisting of inclined fine-over-coarse soil layers are investigated as an alternative cover system. Under unsaturated conditions, the textural contrast delays vertical drainage by capillary forces. The moisture that builds up above the contact will flow downdip along the interface of the layers. Theoretical studies of capillary barriers have identified the hydraulic properties of the layers, the inclination angle, the length of the field and the infiltration rate as the fundamental characteristics of the system. However, it is unclear how these findings can lead to design criteria for capillary barriers. To assess the uncertainty involved in such approaches, experiments have been carried out in a 8 m long flume and on large scale test sites (40 m x 15 m. In addition, the ability of a numerical model to represent the relevant flow processes in capillary barriers has been examined.

  1. On the performance of capillary barriers as landfill cover

    Science.gov (United States)

    Kämpf, M.; Montenegro, H.

    Landfills and waste heaps require an engineered surface cover upon closure. The capping system can vary from a simple soil cover to multiple layers of earth and geosynthetic materials. Conventional design features a compacted soil layer, which suffers from drying out and cracking, as well as root and animal intrusion. Capillary barriers consisting of inclined fine-over-coarse soil layers are investigated as an alternative cover system. Under unsaturated conditions, the textural contrast delays vertical drainage by capillary forces. The moisture that builds up above the contact will flow downdip along the interface of the layers. Theoretical studies of capillary barriers have identified the hydraulic properties of the layers, the inclination angle, the length of the field and the infiltration rate as the fundamental characteristics of the system. However, it is unclear how these findings can lead to design criteria for capillary barriers. To assess the uncertainty involved in such approaches, experiments have been carried out in a 8 m long flume and on large scale test sites (40 m x 15 m). In addition, the ability of a numerical model to represent the relevant flow processes in capillary barriers has been examined.

  2. Application of diffusion barriers to high modulus fibers

    Science.gov (United States)

    Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

    1977-01-01

    Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.

  3. Fuzzy barrier distributions

    International Nuclear Information System (INIS)

    Piasecki, E.

    2009-01-01

    Heavy-ion collisions often produce a fusion barrier distribution with structures displaying a fingerprint of couplings to highly collective excitations [1]. Basically the same distribution can be obtained from large-angle quasi-elastic scattering, though here the role of the many weak direct-reaction channels is unclear. For 2 0N e + 9 0Z r we have observed the barrier structures expected for the highly deformed neon projectile, but for 2 0N e + 9 2Z r we find completely smooth distribution (see Fig.1). We find that transfer channels in these systems are of similar strength but single particle excitations are significantly stronger in the latter case. They apparently reduce the 'resolving power' of the quasi-elastic channel, what leads to smeared out, or 'fuzzy' barrier distribution. This is the first case when such a phenomenon has been observed.(author)

  4. Health Barriers to Learning

    Directory of Open Access Journals (Sweden)

    Delaney Gracy

    2014-01-01

    Full Text Available This article summarizes the results from a 2013 online survey with 408 principals and assistant principals in New York City public elementary and middle schools. The survey assessed three primary areas: health issues in the school, health issues perceived as barriers to learning for affected students, and resources needed to address these barriers. Eighteen of the 22 health conditions listed in the survey were considered a moderate or serious issue within their schools by at least 10% of respondents. All 22 of the health issues were perceived as a barrier to learning by between 12% and 87% of the respondents. Representatives from schools that serve a higher percentage of low-income students reported significantly higher levels of concern about the extent of health issues and their impact on learning. Respondents most often said they need linkages with organizations that can provide additional services and resources at the school, especially for mental health.

  5. Surface pre-treatment for barrier coatings on polyethylene terephthalate

    Science.gov (United States)

    Bahre, H.; Bahroun, K.; Behm, H.; Steves, S.; Awakowicz, P.; Böke, M.; Hopmann, Ch; Winter, J.

    2013-02-01

    Polymers have favourable properties such as light weight, flexibility and transparency. Consequently, this makes them suitable for food packaging, organic light-emitting diodes and flexible solar cells. Nonetheless, raw plastics do not possess sufficient barrier functionality against oxygen and water vapour, which is of paramount importance for most applications. A widespread solution is to deposit thin silicon oxide layers using plasma processes. However, silicon oxide layers do not always fulfil the requirements concerning adhesion and barrier performance when deposited on films. Thus, plasma pre-treatment is often necessary. To analyse the influence of a plasma-based pre-treatment on barrier performance, different plasma pre-treatments on three reactor setups were applied to a very smooth polyethylene terephthalate film before depositing a silicon oxide barrier layer. In this paper, the influence of oxygen and argon plasma pre-treatments towards the barrier performance is discussed examining the chemical and topological change of the film. It was observed that a short one-to-ten-second plasma treatment can reduce the oxygen transmission rate by a factor of five. The surface chemistry and the surface topography change significantly for these short treatment times, leading to an increased surface energy. The surface roughness rises slowly due to the development of small spots in the nanometre range. For very long treatment times, surface roughness of the order of the barrier layer's thickness results in a complete loss of barrier properties. During plasma pre-treatment, the trade-off between surface activation and roughening of the surface has to be carefully considered.

  6. Surface pre-treatment for barrier coatings on polyethylene terephthalate

    International Nuclear Information System (INIS)

    Bahre, H; Böke, M; Winter, J; Bahroun, K; Behm, H; Hopmann, Ch; Steves, S; Awakowicz, P

    2013-01-01

    Polymers have favourable properties such as light weight, flexibility and transparency. Consequently, this makes them suitable for food packaging, organic light-emitting diodes and flexible solar cells. Nonetheless, raw plastics do not possess sufficient barrier functionality against oxygen and water vapour, which is of paramount importance for most applications. A widespread solution is to deposit thin silicon oxide layers using plasma processes. However, silicon oxide layers do not always fulfil the requirements concerning adhesion and barrier performance when deposited on films. Thus, plasma pre-treatment is often necessary. To analyse the influence of a plasma-based pre-treatment on barrier performance, different plasma pre-treatments on three reactor setups were applied to a very smooth polyethylene terephthalate film before depositing a silicon oxide barrier layer. In this paper, the influence of oxygen and argon plasma pre-treatments towards the barrier performance is discussed examining the chemical and topological change of the film. It was observed that a short one-to-ten-second plasma treatment can reduce the oxygen transmission rate by a factor of five. The surface chemistry and the surface topography change significantly for these short treatment times, leading to an increased surface energy. The surface roughness rises slowly due to the development of small spots in the nanometre range. For very long treatment times, surface roughness of the order of the barrier layer's thickness results in a complete loss of barrier properties. During plasma pre-treatment, the trade-off between surface activation and roughening of the surface has to be carefully considered. (paper)

  7. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    Science.gov (United States)

    Forrest, Stephen R.; Wei, Guodan

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  8. Air barrier details: How effective are they

    Energy Technology Data Exchange (ETDEWEB)

    A project was initiated to measure the air leakage through three typical details in wood frame walls: the header joist, electric outlets, and window openings. Three construction methods were tested: the poly approach, where a sealed internal polyethylene sheet and caulking provide the air barrier; an external air barrier approach using a continuous vapor permeable membrane sandwiched between two layers of external wall sheathing; and the airtight drywall approach (ADA), where the interior gypsum board finish along with framing and gaskets are the air barrier. Twelve sample panels using each of the three details were built using each of the construction approaches. A traditional wood-frame wall construction detail, with no effort made to create a continuous air barrier, was also built and tested for comparison. The samples were put in a test chamber so that air pressures could create infiltration or exfiltration through the panel under loads similar to those due to wind action. Measurements were made at several stages during construction of each sample to see the effect of different components on the air leakage. Overall, all but the traditional samples and the ADA electrical outlet panel exceeded the current tightness standards for glass and aluminum curtain walls. All three approaches could meet the airtightness standards of the R-2000 program. The total air leakage calculated for each approach is under 20% of that in traditional construction. Of the details tested, window detailing offers the greatest potential for increasing overall airtightness compared to traditional methods. 1 ref., 2 figs., 1 tab.

  9. Barrier Data Base user's guide

    International Nuclear Information System (INIS)

    Worrell, R.B.; Gould, D.J.; Wall, D.W.

    1977-06-01

    A special purpose data base for physical security barriers has been developed. In addition to barriers, the entities accommodated by the Barrier Data Base (BDB) include threats and references. A threat is established as a configuration of people and equipment which has been employed to penetrate (or attempt to penetrate) a barrier. References are used to cite publications pertinent to the barriers and threats in the data base. Utilization and maintenance of the Barrier Data Base is achieved with LIST, QUERY, ENTER, DELETE, and CHANGE commands which are used to manipulate the data base entities

  10. Encapsulation methods and dielectric layers for organic electrical devices

    Science.gov (United States)

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  11. Layering and Ordering in Electrochemical Double Layers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yihua [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States; Kawaguchi, Tomoya [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States; Pierce, Michael S. [Rochester Institute of Technology, School of Physics and Astronomy, Rochester, New York 14623, United States; Komanicky, Vladimir [Faculty of Science, Safarik University, 041 54 Kosice, Slovakia; You, Hoydoo [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2018-02-26

    Electrochemical double layers (EDL) form at electrified interfaces. While Gouy-Chapman model describes moderately charged EDL, formation of Stern layers was predicted for highly charged EDL. Our results provide structural evidence for a Stern layer of cations, at potentials close to hydrogen evolution in alkali fluoride and chloride electrolytes. Layering was observed by x-ray crystal truncation rods and atomic-scale recoil responses of Pt(111) surface layers. Ordering in the layer is confirmed by glancing-incidence in-plane diffraction measurements.

  12. Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

    2017-01-01

    The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

  13. Wet motor gerotor fuel pump with self-aligning bearing

    Energy Technology Data Exchange (ETDEWEB)

    Carleton, W.A.

    1987-02-24

    A wet motor gerotor fuel pump is described for pumping fuel from a fuel source to an internal combustion engine comprising: a pump case having one end, an opposite end and a flow axis therethrough, the pump case further comprising an inlet end bore at the one end adapted to communicate with the fuel source; an inlet chamber adjacent to the inlet end bore; a motor chamber located in the opposite end of the pump case; a pump chamber interposed the motor chamber and the inlet chamber; first means for sealing the pump case, the first means for sealing located at the opposite end of the pump case; inlet housing means mounted in the pump chamber, the inlet housing means comprising an annular hub protruding into the inlet chamber. The inlet housing means further comprises a gerotor cavity about a gerotor axis located parallel to and displaced a predetermined distance in an eccentric radial direction from the flow axis.

  14. Geophysical characterization of subsurface barriers

    International Nuclear Information System (INIS)

    Borns, D.J.

    1995-08-01

    An option for controlling contaminant migration from plumes and buried waste sites is to construct a subsurface barrier of a low-permeability material. The successful application of subsurface barriers requires processes to verify the emplacement and effectiveness of barrier and to monitor the performance of a barrier after emplacement. Non destructive and remote sensing techniques, such as geophysical methods, are possible technologies to address these needs. The changes in mechanical, hydrologic and chemical properties associated with the emplacement of an engineered barrier will affect geophysical properties such a seismic velocity, electrical conductivity, and dielectric constant. Also, the barrier, once emplaced and interacting with the in situ geologic system, may affect the paths along which electrical current flows in the subsurface. These changes in properties and processes facilitate the detection and monitoring of the barrier. The approaches to characterizing and monitoring engineered barriers can be divided between (1) methods that directly image the barrier using the contrasts in physical properties between the barrier and the host soil or rock and (2) methods that reflect flow processes around or through the barrier. For example, seismic methods that delineate the changes in density and stiffness associated with the barrier represents a direct imaging method. Electrical self potential methods and flow probes based on heat flow methods represent techniques that can delineate the flow path or flow processes around and through a barrier

  15. Layer-dependent band alignment and work function of few-layer phosphorene.

    Science.gov (United States)

    Cai, Yongqing; Zhang, Gang; Zhang, Yong-Wei

    2014-10-20

    Using first-principles calculations, we study the electronic properties of few-layer phosphorene focusing on layer-dependent behavior of band gap, work function band alignment and carrier effective mass. It is found that few-layer phosphorene shows a robust direct band gap character, and its band gap decreases with the number of layers following a power law. The work function decreases rapidly from monolayer (5.16 eV) to trilayer (4.56 eV), and then slowly upon further increasing the layer number. Compared to monolayer phosphorene, there is a drastic decrease of hole effective mass along the ridge (zigzag) direction for bilayer phosphorene, indicating a strong interlayer coupling and screening effect. Our study suggests that 1). Few-layer phosphorene with a layer-dependent band gap and a robust direct band gap character is promising for efficient solar energy harvest. 2). Few-layer phosphorene outperforms monolayer counterpart in terms of a lighter carrier effective mass, a higher carrier density and a weaker scattering due to enhanced screening. 3). The layer-dependent band edges and work functions of few-layer phosphorene allow for modification of Schottky barrier with enhanced carrier injection efficiency. It is expected that few-layer phosphorene will present abundant opportunities for a plethora of new electronic applications.

  16. Oxide growth and damage evolution in thermal barrier coatings

    NARCIS (Netherlands)

    Hille, T.S.; Turteltaub, S.R.; Suiker, A.S.J.

    2011-01-01

    Cracking in thermal barrier coatings (TBC) is triggered by the development of a thermally-grown oxide (TGO) layer that develops during thermal cycling from the oxidation of aluminum present in the bond coat (BC). In the present communication a numerical model is presented that describes the

  17. HEURISTIC OPTIMIZATION AND ALGORITHM TUNING APPLIED TO SORPTIVE BARRIER DESIGN

    Science.gov (United States)

    While heuristic optimization is applied in environmental applications, ad-hoc algorithm configuration is typical. We use a multi-layer sorptive barrier design problem as a benchmark for an algorithm-tuning procedure, as applied to three heuristics (genetic algorithms, simulated ...

  18. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.

    Science.gov (United States)

    Cheng, Rui; Jiang, Shan; Chen, Yu; Liu, Yuan; Weiss, Nathan; Cheng, Hung-Chieh; Wu, Hao; Huang, Yu; Duan, Xiangfeng

    2014-10-08

    Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

  19. Chaotic correlations in barrier billiards with arbitrary barriers

    International Nuclear Information System (INIS)

    Osbaldestin, A H; Adamson, L N C

    2013-01-01

    We study autocorrelation functions in symmetric barrier billiards for golden mean trajectories with arbitrary barriers. Renormalization analysis reveals the presence of a chaotic invariant set and thus that, for a typical barrier, there are chaotic correlations. The chaotic renormalization set is the analogue of the so-called orchid that arises in a generalized Harper equation. (paper)

  20. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  1. Dielectric barrier discharge processing of aerospace materials

    International Nuclear Information System (INIS)

    Scott, S J; Figgures, C C; Dixon, D G

    2004-01-01

    We report the use of atmospheric pressure, air based, dielectric barrier discharges (DBD) to treat materials commonly used in the aerospace industries. The material samples were processed using a test-bed of a conventional DBD configuration in which the sample formed one of the electrodes and was placed in close proximity to a ceramic electrode. The discharges generated a powerful, cold oxidizing environment which was able to remove organic contaminants, etch primer and paint layers, oxidize aluminium and roughen carbon fibre composites by the selective removal of resin

  2. Hanford Site protective isolation surface barrier: Taking research and development to engineered application

    International Nuclear Information System (INIS)

    Myers, D.R.; Wing, N.R.

    1994-01-01

    The development of the Protective Isolation Surface Barrier has been an ongoing program since 1985. This development effort has focused on several technical areas. These technical areas include water infiltration, biointrusion, human intrusion, erosion/deposition, physical stability, barrier materials, computer modeling, long-term climate effects, natural analogs, and barrier design. This paper briefly reviews the results of the research and development in the technical areas and then explains how the results of this work have influenced the design features of the prototype barrier. A good example of this is to explain how the type and depth of the soil layer used in the barrier is related to water infiltration, biointrusion, modeling, climate, analogs, and barrier materials. Another good example is to explain the relationship of the barrier sideslopes (basalt riprap and native soil) with human intrusion, biointrusion, barrier materials, and barrier design. In general, the design features of the prototype barrier will be explained in terms of the results of the testing and development program. After the basis for prototype barrier design has been established, the paper will close by reviewing the construction of the prototype barrier, sharing the lessons learned during construction, and explaining the ongoing testing and monitoring program which will determine the success or failure of this barrier concept and the need for additional design modifications

  3. Understanding transport barriers through modelling

    International Nuclear Information System (INIS)

    Rozhansky, V

    2004-01-01

    Models of radial electric field formation are discussed and compared with the results of numerical simulations from fluid transport codes and Monte Carlo codes. A comparison of the fluid and Monte Carlo codes is presented. A conclusion is arrived at that all the simulations do not predict any bifurcation of the electric field, i.e. no bifurcation of poloidal rotation from low to high Mach number values is obtained. In most of the simulations, the radial electric field is close to the neoclassical electric field. The deviation from neoclassical electric field at the separatrix due to the existence of a transitional viscous layer is discussed. Scalings for the shear of the poloidal rotation are checked versus simulation results. It is demonstrated that assuming the critical shear to be of the order of 10 5 s -1 , it is possible to obtain a L-H transition power scaling close to that observed in the experiment. The dependence of the threshold on the magnetic field direction, pellet injection, aspect ratio and other factors are discussed on the basis of existing simulations. Transport codes where transport coefficients depend on the turbulence level and scenario simulations of L-H transition are analysed. However, the details of gyrofluid and gyrokinetic modelling should be discussed elsewhere. Simulations of internal transport barrier (ITB) formation are discussed as well as factors responsible for ITB formation

  4. Design of engineered sorbent barriers

    International Nuclear Information System (INIS)

    Jones, E.O.; Freeman, H.D.

    1988-08-01

    A sorbent barrier uses sorbent material such as activated carbon or natural zeolites to prevent the migration of radionuclides from a low-level waste site to the aquifer. The sorbent barrier retards the movement of radioactive contaminants, thereby providing time for the radionuclides to decay. Sorbent barriers can be a simple, effective, and inexpensive method for reducing the migration of radionuclides to the environment. Designing a sorbent barrier consists of using soil and sorbent material properties and site conditions as input to a model which will determine the necessary sorbent barrier thickness to meet contaminant limits. The paper will cover the following areas: techniques for measuring sorption properties of barrier materials and underlying soils, use of a radionuclide transport model to determine the required barrier thickness and performance under a variety of site conditions, and cost estimates for applying the barrier. 8 refs., 6 figs., 1 tab

  5. Design of engineered sorbent barriers

    International Nuclear Information System (INIS)

    Jones, E.O.; Freeman, H.D.

    1988-01-01

    A sorbent barrier uses sorbent material such as activated carbon or natural zeolites to prevent the migration of radionuclides from a low-level waste site to the aquifer. The sorbent barrier retards the movement of radioactive contaminants, thereby providing time for the radionuclides to decay. Sorbent barriers can be a simple, effective, and inexpensive method for reducing the migration of radionuclides to the environment. Designing a sorbent barrier consists of using soil and sorbent material properties and site conditions as input to a model which will determine the necessary sorbent barrier thickness to meet contaminant limits. The paper covers the following areas: techniques for measuring sorption properties of barrier materials and underlying soils, use of a radionuclide transport model to determine the required barrier thickness and performance under a variety of site conditions, and cost estimates for applying the barrier

  6. Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

    Science.gov (United States)

    Friedman, Adam L.

    2015-09-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

  7. Energy barrier to decoherence

    International Nuclear Information System (INIS)

    Mizel, Ari; Mitchell, M. W.; Cohen, Marvin L.

    2001-01-01

    We propose a ground-state approach to realizing quantum computers. This scheme is time-independent and inherently defends against decoherence by possessing an energy barrier to excitation. We prove that our time-independent qubits can perform the same algorithms as their time-dependent counterparts. Advantages and disadvantages of the time-independent approach are described. A model involving quantum dots is provided for illustration

  8. Performance of engineered barriers

    International Nuclear Information System (INIS)

    Rajaram, V.; Dean, P.V.; McLellan, S.A.

    1997-01-01

    Engineered barriers, both vertical and horizontal, have been used to isolate hazardous wastes from contact, precipitation, surface water and groundwater. The primary objective of this study was to determine the performance of subsurface barriers installed throughout the U.S. over the past 20 years to contain hazardous wastes. Evaluation of Resource Conservation and Recovery Act (RCRA) Subtitle C or equivalent caps was a secondary objective. A nationwide search was launched to select hazardous waste sites at which vertical barrier walls and/or caps had been used as the containment method. None of the sites selected had an engineered floor. From an initial list of 130 sites, 34 sites were selected on the basis of availability of monitoring data for detailed analysis of actual field performance. This paper will briefly discuss preliminary findings regarding the design, construction quality assurance/construction quality control (CQA/CQC), and monitoring at the 34 sites. In addition, the short-term performance of these sites (less than 5 years) is presented since very little long-term performance data was available

  9. Fluctuations in Schottky barrier heights

    International Nuclear Information System (INIS)

    Mahan, G.D.

    1984-01-01

    A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity

  10. Tree-inception in PMMA with a barrier

    International Nuclear Information System (INIS)

    Gefle, O S; Lebedev, S M; Pokholkov, Y P; Gockenbach, E; Borsi, H

    2004-01-01

    The experimental results of a study of the tree-inception phenomenon for three-layer dielectrics in a divergent field are presented in this paper. It is shown that the tree-inception time depends on both the position of the high-permittivity barrier in the insulating gap and the ratio of the permittivities of the barrier material and main dielectric, and that it has a maximum at the optimal barrier position. It is found that the tree-inception length has a minimum value at this barrier position. Good agreement between the coefficient of the local field non-uniformity and the tree-inception time or the initial tree length was found

  11. Trends in drug delivery through tissue barriers containing tight junctions.

    Science.gov (United States)

    Tscheik, Christian; Blasig, Ingolf E; Winkler, Lars

    2013-04-01

    A limitation in the uptake of many drugs is the restricted permeation through tissue barriers. There are two general ways to cross barriers formed by cell layers: by transcytosis or by diffusion through the intercellular space. In the latter, tight junctions (TJs) play the decisive role in the regulation of the barrier permeability. Thus, transient modulation of TJs is a potent strategy to improve drug delivery. There have been extensive studies on surfactant-like absorption enhancers. One of the most effective enhancers found is sodium caprate. However, this modulates TJs in an unspecific fashion. A novel approach would be the specific modulation of TJ-associated marvel proteins and claudins, which are the main structural components of the TJs. Recent studies have identified synthetic peptidomimetics and RNA interference techniques to downregulate the expression of targeted TJ proteins. This review summarizes current progress and discusses the impact on TJs' barrier function.

  12. CMHC research project: Testing of air barriers construction details: Report

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    This project was conducted to quantify the air leakage characteristics of the header joist, the electric outlets, and the window openings in wood-frame walls. The study evaluated the sealed internal membrane method, where polyethylene sheet and sealant provide the air barrier; the external air barrier method, which uses a continuous vapour permeable membrane (spun-bonded olefin film), sandwiched between two layers of external wall sheathing; and the airtight drywall method, where the interior gypsum board finish, together with framing materials and gaskets, are used as the air barrier. In addition, the traditional approach to wood-frame wall construction, where no special attention is given to achieving a continuous air barrier, was evaluated for comparison.

  13. The formation of tritium permeation barriers by CVD

    International Nuclear Information System (INIS)

    Forcey, K.S.; Perujo, A.; Reiter, F.; Lolli-Ceroni, P.L.

    1993-01-01

    The effectiveness as permeation barriers of the following CVD coatings have been investigated: TiC (1 to 2 μm in thickness); a bi-layer of TiN on TiC (3 μm total thickness) and CVD Al 2 O 3 on a TiN/TiC bi-layer. The substrate materials were TZM (a Mo alloy) and 316L stainless steel in the form of discs of diameter 48 mm and thickness 0.1 or 1 mm. Permeation measurements were performed in the temperature range 515-742 K using deuterium at pressures in the range 1-50 kPa. CVD layers were shown to form reasonably effective permeation barriers. At a temperature of 673 K TiC is around 6000 times less permeable to deuterium than 316L stainless steel. (orig.)

  14. Magneto-transport in CdTe/CdMnTe dilute magnetic semiconductor single barrier structures

    International Nuclear Information System (INIS)

    Lyons, V.R.

    1999-03-01

    This thesis presents work done on electrical transport through dilute magnetic semiconductor (DMS) single barriers in both zero and non-zero magnetic fields. The fields are applied either perpendicular or parallel to the DMS layers. The main samples under investigation consist of 100 A and 200 A CdTe/Cd 0.8 Mn 0.2 Te/CdTe single barrier heterostructures. In addition electrical characterisation of the non magnetic layers is performed. Current through the barrier is measured as a function of voltage, magnetic field and temperature. A theoretical model is derived in order to calculate the current as a function of barrier height, barrier width, emitting layer carrier concentration, applied bias and temperature. These variables are then treated as fitting parameters and comparisons are made between the calculated and the experimental currents. The barriers are shown to produce non-Ohmic transport. The roles of quantum mechanical tunnelling and thermal activation across the barrier are investigated and shown to be highly mixed. An unexpectedly high degree of tunnelling is found to occur at high temperatures, within the region previously assumed to be dominated by thermal activation. Moreover the barrier height is found to be lower and the width greater than expected. These observations suggest that a high level of Mn diffusion occurs, possibly due to In dopant related effects. This suggestion is validated by the high emitting layer carrier concentration suggested by the fitting. At low temperatures and voltages the thicker barrier sample is shown to contain a parasitic leak path which short-circuits the barrier. This leak may exist in both samples but only becomes dominant where the barriers are sufficiently opaque to the incident carriers. Changes in a magnetic field are expected to be due to sp-d exchange induced giant Zeeman splitting in the barrier and either normal spin splitting or sp-d exchange effects in the emitter regions. The application of a magnetic field is

  15. Barrier Coatings for Refractory Metals and Superalloys

    International Nuclear Information System (INIS)

    SM Sabol; BT Randall; JD Edington; CJ Larkin; BJ Close

    2006-01-01

    In the closed working fluid loop of the proposed Prometheus space nuclear power plant (SNPP), there is the potential for reaction of core and plant structural materials with gas phase impurities and gas phase transport of interstitial elements between superalloy and refractory metal alloy components during service. Primary concerns are surface oxidation, interstitial embrittlement of refractory metals and decarburization of superalloys. In parallel with kinetic investigations, this letter evaluates the ability of potential coatings to prevent or impede communication between reactor and plant components. Key coating requirements are identified and current technology coating materials are reviewed relative to these requirements. Candidate coatings are identified for future evaluation based on current knowledge of design parameters and anticipated environment. Coatings were identified for superalloys and refractory metals to provide diffusion barriers to interstitial transport and act as reactive barriers to potential oxidation. Due to their high stability at low oxygen potential, alumina formers are most promising for oxidation protection given the anticipated coolant gas chemistry. A sublayer of iridium is recommended to provide inherent diffusion resistance to interstitials. Based on specific base metal selection, a thin film substrate--coating interdiffusion barrier layer may be necessary to meet mission life

  16. Barrier Coatings for Refractory Metals and Superalloys

    Energy Technology Data Exchange (ETDEWEB)

    SM Sabol; BT Randall; JD Edington; CJ Larkin; BJ Close

    2006-02-23

    In the closed working fluid loop of the proposed Prometheus space nuclear power plant (SNPP), there is the potential for reaction of core and plant structural materials with gas phase impurities and gas phase transport of interstitial elements between superalloy and refractory metal alloy components during service. Primary concerns are surface oxidation, interstitial embrittlement of refractory metals and decarburization of superalloys. In parallel with kinetic investigations, this letter evaluates the ability of potential coatings to prevent or impede communication between reactor and plant components. Key coating requirements are identified and current technology coating materials are reviewed relative to these requirements. Candidate coatings are identified for future evaluation based on current knowledge of design parameters and anticipated environment. Coatings were identified for superalloys and refractory metals to provide diffusion barriers to interstitial transport and act as reactive barriers to potential oxidation. Due to their high stability at low oxygen potential, alumina formers are most promising for oxidation protection given the anticipated coolant gas chemistry. A sublayer of iridium is recommended to provide inherent diffusion resistance to interstitials. Based on specific base metal selection, a thin film substrate--coating interdiffusion barrier layer may be necessary to meet mission life.

  17. Barriers to accessing urethroplasty.

    Science.gov (United States)

    Consolo, Michael J; Syed, Kirin K; Robison, Christopher; McFadden, Jacob; Shalowitz, David I; Brown, Gordon A; Sussman, David O; Figler, Bradley D

    2016-01-01

    Urethroplasty is an effective treatment for men with anterior urethral strictures, but is utilized less frequently than ineffective treatments such as internal urethrotomy. We sought to identify provider-level barriers to urethroplasty. An anonymous online survey was emailed to all Mid-Atlantic American Urological Association members. Six scenarios in which urethroplasty was the most appropriate treatment were presented. Primary outcome was recommendation for urethroplasty in ≥ three clinical scenarios. Other factors measured include practice zip code, urethroplasty training, and proximity to a urethroplasty surgeon. Multivariate logistic regression identified factors associated with increased likelihood of urethroplasty recommendation. Of 670 members emailed, 109 (16%) completed the survey. Final analysis included 88 respondents. Mean years in practice was 17.2. Most respondents received formal training in urethroplasty: 43 (49%) in residency, 5 (6%) in fellowship, and 10 (11%) in both; 48 respondents (55%) had a urethroplasty surgeon in their practice, whereas 18 (20%) had a urethroplasty surgeon within 45 minutes of his or her primary practice location. The only covariate that was associated with an increased likelihood of recommending urethroplasty in ≥ three scenarios was formal urethroplasty training. Most members (68%) reported no barriers to referring patients for urethroplasty; the most common barriers cited were long distance to urethroplasty surgeon (n 5 13, 15%) and concern about complications (n 5 8, 9%). Urethroplasty continues to be underutilized in men with anterior urethral strictures, potentially due to lack of knowledge dissemination and access to a urethroplasty surgeon. Appropriate urethroplasty utilization may increase with greater exposure to urethroplasty in training.

  18. Racial Trade Barriers?

    DEFF Research Database (Denmark)

    Bjerre, Jacob Halvas

    . This paper analyzes the racial policies pursued in the foreign trade and argues that we need to recognize Aryanization as a world-wide policy in order to fully understand its character and possible consequences. I focus on the pre-war period and analyze the case of Denmark from three different perspectives......: perpetrators, victims and bystanders. The analysis will show that race, economy and foreign trade were combined in an attempt to raise racial trade barriers. This forced the question of German racial policies on the Danish government, Danish-Jewish businesses, and German companies involved in foreign trade...

  19. Support or Barrier?

    DEFF Research Database (Denmark)

    Sanden, Guro Refsum; Lønsmann, Dorte

    This study offers a critical look at how corporate-level language management influences front-line language practices among employees in three multinational corporations (MNCs) headquartered in Scandinavia. Based on interview and document data, we examine, firstly, what front-line practices...... employees use to cross language boundaries in their everyday work, and, secondly, how these practices relate to top-down language management in the case companies. Our findings show that employees are often dependent on ad hoc and informal solutions in cross- language situations, which leads us...... to a discussion of how a company’s language policy may be seen as both support and a barrier....

  20. Modelization and simulation of capillary barriers

    International Nuclear Information System (INIS)

    Lisbona Cortes, F.; Aguilar Villa, G.; Clavero Gracia, C.; Gracia Lozano, J.L.

    1998-01-01

    Among the different underground transport phenomena, that due to water flows is of great relevance. Water flows in infiltration and percolation processes are responsible of the transport of hazardous wastes towards phreatic layers. From the industrial and geological standpoints, there is a great interest in the design of natural devices to avoid the flows transporting polluting substances. This interest is increased when devices are used to isolate radioactive waste repositories, whose life is to be longer than several hundred years. The so-called natural devices are those based on the superimposition of material with different hydraulic properties. In particular, the flow retention in this kind stratified media, in unsaturated conditions, is basically due to the capillary barrier effect, resulting from placing a low conductivity material over another with a high hydraulic conductivity. Covers designed from the effect above have also to allow a drainage of the upper layer. The lower cost of these covers, with respect to other kinds of protection systems, and the stability in time of their components make them very attractive. However, a previous investigation to determine their effectivity is required. In this report we present the computer code BCSIM, useful for easy simulations of unsaturated flows in a capillary barrier configuration with drainage, and which is intended to serve as a tool for designing efficient covers. The model, the numerical algorithm and several implementation aspects are described. Results obtained in several simulations, confirming the effectivity of capillary barriers as a technique to build safety covers for hazardous waste repositories, are presented. (Author)

  1. Stability of barrier buckets with zero RF-barrier separations

    Energy Technology Data Exchange (ETDEWEB)

    Ng, K.Y.; /Fermilab

    2005-03-01

    A barrier bucket with very small separation between the rf barriers (relative to the barrier widths) or even zero separation has its synchrotron tune decreasing rather slowly from a large value towards the boundary of the bucket. As a result, large area at the bucket edges can become unstable under the modulation of rf voltage and/or rf phase. In addition, chaotic regions may form near the bucket center and extend outward under increasing modulation. Application is made to those barrier buckets used in the process of momentum mining at the Fermilab Recycler Ring.

  2. Collective Phenomena In Volume And Surface Barrier Discharges

    Science.gov (United States)

    Kogelschatz, U.

    2010-07-01

    Barrier discharges are increasingly used as a cost-effective means to produce non-equilibrium plasmas at atmospheric pressure. This way, copious amounts of electrons, ions, free radicals and excited species can be generated without appreciable gas heating. In most applications the barrier is made of dielectric material. In laboratory experiments also the use of resistive, ferroelectric and semiconducting materials has been investigated, also porous ceramic layers and dielectric barriers with controlled surface conductivity. Major applications utilizing mainly dielectric barriers include ozone generation, surface cleaning and modification, polymer and textile treatment, sterilization, pollution control, CO2 lasers, excimer lamps, plasma display panels (flat TV screens). More recent research efforts are also devoted to biomedical applications and to plasma actuators for flow control. Sinu- soidal feeding voltages at various frequencies as well as pulsed excitation schemes are used. Volume as well as surface barrier discharges can exist in the form of filamentary, regularly patterned or laterally homogeneous discharges. Reviews of the subject and the older literature on barrier discharges were published by Kogelschatz (2002, 2003), by Wagner et al. (2003) and by Fridman et al. (2005). A detailed discussion of various properties of barrier discharges can also be found in the recent book "Non-Equilibrium Air Plasmas at Atmospheric Pressure" by Becker et al. (2005). The physical effects leading to collective phenomena in volume and surface barrier discharges will be discussed in detail. Special attention will be given to self-organization of current filaments. Main similarities and differences of the two types of barrier discharges will be elaborated.

  3. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2011-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

  4. Engineered surface barriers for waste disposal sites: lysimeter facility design and construction

    International Nuclear Information System (INIS)

    Phillips, S.J.; Ruben, M.S.; Kirkham, R.R.

    1988-01-01

    A facility to evaluate performance of engineered surface carriers for confinement of buried wastes has been designed, constructed, and operations initiated. The Field Lysimeter Test Facility is located at the US Department of Energy's Hanford Site in Richland, Washington. The facility consists of 18 one-dimensional drainage and weighing lysimeters used to evaluate 7 replicated barrier treatments. Distinct layers of natural earth materials were used to construct layered soil and rock barriers in each lysimeter. These barrier designs are capable in principal of significantly reducing or precluding infiltration of meteoric water through barriers into underlying contaminated zones. This paper summarizes salient facility design and construction features used in testing of the Hanford Site's engineered surface barriers

  5. Oxide layers for silicon detector protection against enviroment effects

    International Nuclear Information System (INIS)

    Bel'tsazh, E.; Brylovska, I.; Valerian, M.

    1986-01-01

    It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. The layers are produced by electrochemical oxidation of silicon surface with the following low-temperature annealing. These layers have characteristics similar to those for oxide layers produced by treatment of silicon samples at elevated temperature in oxygen flow. To determine properties of oxide layers produced by electrochemical oxidation the α-particle back-scattering method and the method of volt-farad characteristics were used. Protection properties of such layers were checked on the surface-barrier detectors. It was shown that protection properties of such detectors were conserved during long storage at room temperature and during their storage under wet-bulb temperature. Detectors without protection layer have worsened their characteristics

  6. Performing a local barrier operation

    Science.gov (United States)

    Archer, Charles J; Blocksome, Michael A; Ratterman, Joseph D; Smith, Brian E

    2014-03-04

    Performing a local barrier operation with parallel tasks executing on a compute node including, for each task: retrieving a present value of a counter; calculating, in dependence upon the present value of the counter and a total number of tasks performing the local barrier operation, a base value, the base value representing the counter's value prior to any task joining the local barrier; calculating, in dependence upon the base value and the total number of tasks performing the local barrier operation, a target value of the counter, the target value representing the counter's value when all tasks have joined the local barrier; joining the local barrier, including atomically incrementing the value of the counter; and repetitively, until the present value of the counter is no less than the target value of the counter: retrieving the present value of the counter and determining whether the present value equals the target value.

  7. Demonstration of close-coupled barriers for subsurface containment of buried waste

    International Nuclear Information System (INIS)

    Dwyer, B.P.

    1996-05-01

    A close-coupled barrier is produced by first installing a conventional cement grout curtain followed by a thin inner lining of a polymer grout. The resultant barrier is a cement polymer composite that has economic benefits derived from the cement and performance benefits from the durable and resistant polymer layer. Close-coupled barrier technology is applicable for final, interim, or emergency containment of subsurface waste forms. Consequently, when considering the diversity of technology application, the construction emplacement and material technology maturity, general site operational requirements, and regulatory compliance incentives, the close-coupled barrier system provides an alternative for any hazardous or mixed waste remediation plan. This paper discusses the installation of a close-coupled barrier and the subsequent integrity verification. The demonstration was installed at a benign site at the Hanford Geotechnical Test Facility, 400 Area, Hanford, Washington. The composite barrier was emplaced beneath a 7,500 liter tank. The tank was chosen to simulate a typical DOE Complex waste form. The stresses induced on the waste form were evaluated during barrier construction. The barrier was constructed using conventional jet grouting techniques. Drilling was completed at a 45 degree angle to the ground, forming a conical shaped barrier with the waste form inside the cone. Two overlapping rows of cylindrical cement columns were grouted in a honeycomb fashion to form the secondary backdrop barrier layer. The primary barrier, a high molecular weight polymer manufactured by 3M Company, was then installed providing a relatively thin inner liner for the secondary barrier. The primary barrier was emplaced by panel jet grouting with a dual wall drill stem, two phase jet grouting system

  8. Barrier rf systems in synchrotrons

    International Nuclear Information System (INIS)

    Bhat, Chandra M.

    2004-01-01

    Recently, many interesting applications of the barrier RF system in hadron synchrotrons have been realized. A remarkable example of this is the development of longitudinal momentum mining and implementation at the Fermilab Recycler for extraction of low emittance pbars for the Tevatron shots. At Fermilab, we have barrier RF systems in four different rings. In the case of Recycler Ring, all of the rf manipulations are carried out using a barrier RF system. Here, the author reviews various uses of barrier rf systems in particle accelerators including some new schemes for producing intense proton beam and possible new applications

  9. Tunnel superpenetrability of potential barriers

    International Nuclear Information System (INIS)

    Zakhariev, B N.

    1982-01-01

    The transmission of two particles through the same barrier is considered. The limiting cases are compared when the particles are joined together in a single particle with double mass-energy and potential and when they pass the barrier independently. As an intermediate case a pair of particles bound in a quasideuteron of a finite size is considered. It is shown that long-range collective correlations of particles (of the superfluidity type and others) simplify very much for them passing through high potential barriers. This happens due to the transfer of the additional energy from the particles outside the barriers to those inside it

  10. Barriers for recess physical activity

    DEFF Research Database (Denmark)

    Pawlowski, Charlotte Skau; Tjørnhøj-Thomsen, Tine; Schipperijn, Jasper

    2014-01-01

    BACKGROUND: Many children, in particular girls, do not reach the recommended amount of daily physical activity. School recess provides an opportunity for both boys and girls to be physically active, but barriers to recess physical activity are not well understood. This study explores gender...... differences in children's perceptions of barriers to recess physical activity. Based on the socio-ecological model four types of environmental barriers were distinguished: natural, social, physical and organizational environment. METHODS: Data were collected through 17 focus groups (at 17 different schools...... this study, we recommend promoting recess physical activity through a combination of actions, addressing barriers within the natural, social, physical and organizational environment....

  11. Linguistic Barriers and Bridges

    DEFF Research Database (Denmark)

    Thuesen, Frederik

    2016-01-01

    The influence of language on social capital in low-skill and ethnically diverse workplaces has thus far received very limited attention within the sociology of work. As the ethnically diverse workplace is an important social space for the construction of social relations bridging different social...... groups, the sociology of work needs to develop a better understanding of the way in which linguistic diversity influences the formation of social capital, i.e. resources such as the trust and reciprocity inherent in social relations in such workplaces. Drawing on theories about intergroup contact...... and intercultural communication, this article analyses interviews with 31 employees from two highly ethnically diverse Danish workplaces. The article shows how linguistic barriers such as different levels of majority language competence and their consequent misunderstandings breed mistrust and hostility, whilst...

  12. Countermeasures and barriers

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, Johannes [Oersted - DTU, Automation, Kgs. Lyngby (Denmark)

    2005-10-01

    In 1973 Haddon proposed ten strategies for reducing and avoiding damages based on a model of potential harmful energy transfer (Haddon, 1973). The strategies apply to a large variety of unwanted phenomena. Haddon's pioneering work on countermeasures has had a major influence on later thinking about safety. Considering its impact it is remarkable that the literature offers almost no discussions related to the theoretical foundations of Haddon's countermeasure strategies. The present report addresses a number of theoretical issues related to Haddon's countermeasure strategies, which are: 1) A reformulation and formalization of Haddon's countermeasure strategies. 2) An identification and description of some of the problems associated with the term 'barrier'. 3) Suggestions for a more precise terminology based on the causal structure of countermeasures. 4) Extending the scope of countermeasures to include sign-based countermeasures. (au)

  13. Countermeasures and barriers

    International Nuclear Information System (INIS)

    Petersen, Johannes

    2005-10-01

    In 1973 Haddon proposed ten strategies for reducing and avoiding damages based on a model of potential harmful energy transfer (Haddon, 1973). The strategies apply to a large variety of unwanted phenomena. Haddon's pioneering work on countermeasures has had a major influence on later thinking about safety. Considering its impact it is remarkable that the literature offers almost no discussions related to the theoretical foundations of Haddon's countermeasure strategies. The present report addresses a number of theoretical issues related to Haddon's countermeasure strategies, which are: 1) A reformulation and formalization of Haddon's countermeasure strategies. 2) An identification and description of some of the problems associated with the term 'barrier'. 3) Suggestions for a more precise terminology based on the causal structure of countermeasures. 4) Extending the scope of countermeasures to include sign-based countermeasures. (au)

  14. Dielectric barrier discharges applied for soft ionization and their mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Sebastian; Klute, Felix David; Schütz, Alexander; Franzke, Joachim, E-mail: joachim.franzke@isas.de

    2017-01-25

    Dielectric barrier discharges are used for analytical applications as dissociative source for optical emission spectrometry and for ambient-ionization techniques. In the range of ambient-ionization techniques it has attracted much attention in fields like food safety, biological analysis, mass spectrometry for reaction monitoring and imaging forensic identification. In this review some examples are given for the application as desorption/ionization source as well as for the sole application as ionization source with different sample introductions. It will be shown that the detection might depend on the certain distance of the plasma in reference to the sample or the kind of discharge which might be produced by different shapes of the applied high voltage. Some attempts of characterization are presented. A more detailed characterization of the dielectric barrier discharge realized with two ring electrodes, each separately covered with a dielectric layer, is described. - Highlights: • Dielectric barrier discharge applied as desorption/ionization source. • Dielectric barrier discharge applied solely as ionization source. • Different geometries in order to maintain soft ionization. • Characterization of the LTP probe. • Dielectric barrier discharges with two dielectric barriers (ring-ring shape).

  15. Long term performance of the Waterloo denitrification barrier

    International Nuclear Information System (INIS)

    Robertson, W.D.; Cherry, J.A.

    1997-01-01

    Beginning in 1991 a series of laboratory tests and small scale field trials were initiated to test the performance of an innovative permeable reactive barrier for treatment of nitrate from septic systems. The barrier promotes denitrification by providing an energy source in the form of solid organic carbon mixed into the porous media material. Advantages of the system for nitrate treatment are that the reaction is passive and in situ and it is possible to incorporate sufficient carbon mass in conveniently sized barriers to potentially provide treatment for long periods (decades) without the necessity for maintenance. However, longevity can only be demonstrated by careful long term monitoring of field installations. This paper documents four years of operating history at three small scale field trials; two where the denitrification barrier is installed as a horizontal layer positioned in the unsaturated zone below conventional septic system infiltration beds and one where the barrier is installed as a vertical wall intercepting a septic system plume at a downgradient location. The barriers have successfully attenuated 50-100% of NO - 3 -N levels of up to 170 mg/L and treatment has remained consistent over the four year period in each case, thus considerable longevity is indicated. Other field trials have demonstrated this technology to be equally effective in treating nitrogen contamination from other sources such as landfill leachate and farm field runoff

  16. Suppression of surface barriers in superconductors by columnar defects

    International Nuclear Information System (INIS)

    Koshelev, A. E.; Vinokur, V. M.

    2001-01-01

    We investigate the influence of columnar defects in layered superconductors on the thermally activated penetration of pancake vortices through the surface barrier. Columnar defects, located near the surface, facilitate penetration of vortices through the surface barrier, by creating ''weak spots,'' through which pancakes can penetrate into the superconductor. Penetration of a pancake mediated by an isolated column, located near the surface, is a two-stage process involving hopping from the surface to the column and the detachment from the column into the bulk; each stage is controlled by its own activation barrier. The resulting effective energy is equal to the maximum of those two barriers. For a given external field there exists an optimum location of the column for which the barriers for the both processes are equal and the reduction of the effective penetration barrier is maximal. At high fields the effective penetration field is approximately 2 times smaller than in unirradiated samples. We also estimate the suppression of the effective penetration field by column clusters. This mechanism provides further reduction of the penetration field at low temperatures

  17. Hanford Permanent Isolation Barrier Program: Asphalt technology development

    International Nuclear Information System (INIS)

    Freeman, H.D.; Romine, R.A.

    1994-11-01

    An important component of the Hanford Permanent Isolation Barrier is the use of a two-layer composite asphalt system, which provides backup water diversion capabilities if the primary capillary barrier fails to meet infiltration goals. Because of asphalt's potential to perform to specification over the 1000-year design life criterion, a composite asphalt barrier (HMAC/fluid-applied polymer-modified asphalt) is being considered as an alternative to the bentonite clay/high density poly(ethylene) barriers for the low-permeability component of the Hanford Permanent Isolation Barrier. The feasibility of using asphalt as a long-term barrier is currently being studied. Information that must be known is the ability of asphalt to retain desirable physical properties over a period of 1000 years. This paper presents the approach for performing accelerated aging tests and evaluating the performance of samples under accelerated conditions. The results of these tests will be compared with asphalt artifact analogs and the results of modeling the degradation of the selected asphalt composite to make life-cycle predictions

  18. Oxygen- and water-induced degradation of an inverted polymer solar cell: the barrier effect

    DEFF Research Database (Denmark)

    Vesterager Madsen, Morten; Norrman, Kion; Krebs, Frederik C

    2011-01-01

    The work focuses on the degradation of performance induced by both water and oxygen in an inverted geometry organic photovoltaic device with emphasis on the accumulated barrier effect of the layers comprising the layer stack. By studying the exchange of oxygen in the zinc oxide (ZnO) layer...... in the humid atmosphere, correlating well with a long observed lifetime in the same atmosphere.© 2011 Society of Photo-Optical Instrumentation Engineers....

  19. Thames barrier (flood protection barriers on the Thames)

    International Nuclear Information System (INIS)

    Ilkovic, J.

    2005-01-01

    In this paper the flood protection barriers on the Thames are presented. The flood protection system on the Thames in 1984 was commissioned. During two decades this barrier was used 54 times against to the high water and 34 times against storm-sewage. There is installed buttress type hydroelectric power plant

  20. How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

    International Nuclear Information System (INIS)

    Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

    2017-01-01

    In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium–nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (∼2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs. (paper)

  1. How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

    Science.gov (United States)

    Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

    2017-11-01

    In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

  2. THE FORMATION AND CHARACTERIZATION OF SUSTAINABLE LAYERED FILMS INCORPORATING MICROFIBRILLATED CELLULOSE (MFC)

    OpenAIRE

    Galina Rodionova,; Solenne Roudot; , Øyvind Eriksen,; Ferdinand Männle,; Øyvind Gregersen

    2012-01-01

    Microfibrillated cellulose (MFC), TEMPO-pretreated MFC, and hybrid polymer/MFC mix were used for the production of layered films with interesting properties for application in food packaging. The series of samples were prepared from MFC (base layers) using a dispersion-casting method. The same procedure as well as a bar coating technique was applied to form top layers of different basis weights. The barrier properties and formation of the layered films were investigated in relationship to the...

  3. Weaning stress and gastrointestinal barrier development: Implications for lifelong gut health in pigs

    Directory of Open Access Journals (Sweden)

    Adam J. Moeser

    2017-12-01

    Full Text Available The gastrointestinal (GI barrier serves a critical role in survival and overall health of animals and humans. Several layers of barrier defense mechanisms are provided by the epithelial, immune and enteric nervous systems. Together they act in concert to control normal gut functions (e.g., digestion, absorption, secretion, immunity, etc. whereas at the same time provide a barrier from the hostile conditions in the luminal environment. Breakdown of these critical GI functions is a central pathophysiological mechanism in the most serious GI disorders in pigs. This review will focus on the development and functional properties of the GI barrier in pigs and how common early life production stressors, such as weaning, can alter immediate and long-term barrier function and disease susceptibility. Specific stress-related pathophysiological mechanisms responsible for driving GI barrier dysfunction induced by weaning and the implications to animal health and performance will be discussed.

  4. Demonstration of close-coupled barriers for subsurface containment of buried waste

    International Nuclear Information System (INIS)

    Dwyer, B.P.; Heiser, J.; Stewart, W.

    1996-01-01

    The primary objective of this project is to develop and demonstrate a close-coupled barrier for the containment of subsurface waste or contaminant migration. A close-coupled barrier is produced by first installing a conventional cement grout curtain followed by a thin inner lining of a polymer grout. The resultant barrier is a cement polymer composite that has economic benefits derived from the cement and performance benefits from the durable and resistant polymer layer. Close-coupled barrier technology is applicable for final, interim, or emergency containment of subsurface waste forms. Consequently, when considering the diversity of technology application, the construction emplacement and material technology maturity, general site operational requirements, and regulatory compliance incentives, the close-coupled barrier system provides an alternative for any hazardous or mixed waste remediation plan. This paper discusses the installation of a close-coupled barrier and the subsequent integrity verification

  5. Energy barriers in patterned media

    NARCIS (Netherlands)

    de Vries, Jeroen

    2013-01-01

    Due to the fact that thermal activation aids in overcoming the energy barrier, the required field for reversal varies from instance to instance for the same island. This thermally induced switching field distribution can be used to determine the difference in energy barrier of magneticallyweak and

  6. Simulating complex noise barrier reflections

    NARCIS (Netherlands)

    Eerden, F.J.M. van der; Lutgendorf, D.; Roo, F. de

    2011-01-01

    Within the EU FP7 QUIESST project, QUIeting the Environment for a Sustainable Surface Transport, a test method is being developed for the reflectivity of noise barriers. The method needs to account for a complex shape of barriers and the use of various types of absorbing materials. The performance

  7. BARRIERS OF STRATEGIC ALLIANCES ORGANIZATION

    Directory of Open Access Journals (Sweden)

    Vladislav M. Sannikov

    2014-01-01

    Full Text Available General barriers of organization of different types of strategic alliances have beenconsidered in the article. There are several recommendations for overcoming themin cases of international alliances, and in case of work in one state. The article also identified goals and tasks of single coordination center of alliance to overcome organization barriers.

  8. Self-Supporting High Performance Multi-Layer Insulation Technology Development (SSMLI)

    Data.gov (United States)

    National Aeronautics and Space Administration — A new type of MLI—Integrated Multi-Layer Insulation (IMLI)—uses rigid, low-conductivity polymer spacers instead of netting to keep the radiation barriers separated....

  9. VSWI Wetlands Advisory Layer

    Data.gov (United States)

    Vermont Center for Geographic Information — This dataset represents the DEC Wetlands Program's Advisory layer. This layer makes the most up-to-date, non-jurisdictional, wetlands mapping avaiable to the public...

  10. Reducing Water Vapor Permeability of Poly(lactic acid Film and Bottle through Layer-by-Layer Deposition of Green-Processed Cellulose Nanocrystals and Chitosan

    Directory of Open Access Journals (Sweden)

    Katalin Halász

    2015-01-01

    Full Text Available Layer-by-layer electrostatic self-assembly technique was applied to improve the barrier properties of poly(lactic acid (PLA films and bottles. The LbL process was carried out by the alternate adsorption of chitosan (CH (polycation and cellulose nanocrystals (CNC produced via ultrasonic treatment. Four bilayers (on each side of chitosan and cellulose nanocrystals caused 29 and 26% improvement in barrier properties in case of films and bottles, respectively. According to the results the LbL process with CH and CNC offered a transparent “green” barrier coating on PLA substrates.

  11. Optically controlled resonant tunneling in a double-barrier diode

    Science.gov (United States)

    Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.

    1991-03-01

    The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.

  12. Improvement of barrier properties of rotomolded PE containers with nanoclay

    Energy Technology Data Exchange (ETDEWEB)

    Jamshidi, Shadi; Sundararaj, Uttandaraman, E-mail: u.sundararaj@ucalgary.ca [Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, T2N 1N4 (Canada)

    2015-05-22

    Polyethylene (PE) is widely used to make bulk containers in rotational molding process. The challenge in this study is to improve permeation resistance of PE to hydrocarbon solvents and gases. Adding organomodified clay improves the thermal, barrier and mechanical properties of PE. In fact, clay layers create a tortuous path against the permeant, yielding better barrier properties. Due to the non-polar hydrophobic nature of PE and polar hydrophilic structure of clay minerals, the compatibilizer plays a crucial role to enhance the dispersion level of clay in the matrix. In this study High Density Polyethylene (HDPE) and Linear Low Density Polyethylene (LLDPE) layered silicate nanocomposite were melt-compounded with two concentrations of organomodified clay (2 and 4 wt. %). The interaction between nanoclay, compatibilizer and rotomolding grade of PE were examined by using X-ray diffraction, transmission electron microscopy (TEM) and rheology test. Rheology was used to determine the performance of our material at low shear processing condition.

  13. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Science.gov (United States)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  14. Hanford Site Protective Barrier Development Program: Fiscal year 1990 highlights

    International Nuclear Information System (INIS)

    Cadwell, L.L.

    1991-09-01

    The Hanford Site Protective Barrier Development Program was jointly developed by Pacific Northwest Laboratory (PNL) and Westinghouse Hanford Company (WHC) to design and test an earthen cover system(s) that can be used to inhibit water infiltration; plant, animal, and human intrusion; and wind and water erosion. The joint PNL/WHC program was initiated in FY 1986. To date, research findings support the initial concepts of barrier designs for the Hanford Site. A fine-soil surface is planned to partition surface water into runoff and temporary storage. Transpiration by vegetation that grows in the fine-soil layer will return stored water to the atmosphere as will surface evaporation. A capillary break created by the interface of the fine-soil layer and coarser textured materials below will further limit the downward migration of surface water, making it available over a longer period of time for cycling to the atmosphere. Should water pass the interface, it will drain laterally through a coarse textured sand/gravel layer. Tested barrier designs appear to work adequately to prevent drainage under current and postulated wetter-climate (added precipitation) conditions. Wind and water erosion tasks are developing data to predict the extent of erosion on barrier surfaces. Data collected during the last year confirm the effectiveness of small burrowing animals in removing surface water. Water infiltrating through burrows of larger mammals was subsequently lost by natural processes. Natural analog and climate change studies are under way to provide credibility for modeling the performance of barrier designs over a long period of time and under shifts in climate. 10 refs., 30 figs

  15. Hanford Site Protective Barrier Development Program: Fiscal year 1990 highlights

    Energy Technology Data Exchange (ETDEWEB)

    Cadwell, L.L. (ed.)

    1991-09-01

    The Hanford Site Protective Barrier Development Program was jointly developed by Pacific Northwest Laboratory (PNL) and Westinghouse Hanford Company (WHC) to design and test an earthen cover system(s) that can be used to inhibit water infiltration; plant, animal, and human intrusion; and wind and water erosion. The joint PNL/WHC program was initiated in FY 1986. To date, research findings support the initial concepts of barrier designs for the Hanford Site. A fine-soil surface is planned to partition surface water into runoff and temporary storage. Transpiration by vegetation that grows in the fine-soil layer will return stored water to the atmosphere as will surface evaporation. A capillary break created by the interface of the fine-soil layer and coarser textured materials below will further limit the downward migration of surface water, making it available over a longer period of time for cycling to the atmosphere. Should water pass the interface, it will drain laterally through a coarse textured sand/gravel layer. Tested barrier designs appear to work adequately to prevent drainage under current and postulated wetter-climate (added precipitation) conditions. Wind and water erosion tasks are developing data to predict the extent of erosion on barrier surfaces. Data collected during the last year confirm the effectiveness of small burrowing animals in removing surface water. Water infiltrating through burrows of larger mammals was subsequently lost by natural processes. Natural analog and climate change studies are under way to provide credibility for modeling the performance of barrier designs over a long period of time and under shifts in climate. 10 refs., 30 figs.

  16. Investigation of aluminised steel as a barrier to tritium using accelerator-based and hydrogen permeation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Sokhi, R S; Forcey, K S; Ross, D K; Earwaker, L G [Birmingham Univ. (UK). School of Physics and Space Research

    1989-04-01

    Aluminised steel has been proposed as a barrier to tritium permeation in fusion reactors. The properties of these materials as tritium barriers have been studied using accelerator-based techniques and hydrogen permeation methods. The aluminide layers has been characterised by Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) techniques using the 3 MV Dynamitron accelerator based at the School of Physics and Space Research Radiation Centre. The effectiveness of the aluminide layer as a tritium barrier has been measured directly by a conventional permeation apparatus over a range of temperatures. The effect of high temperatures on the structure of the aluminide layer has been examined. Any correlation between the composition of the layer and its effectiveness as a tritium barrier is also discussed. (orig.).

  17. Layer-by-layer cell membrane assembly

    Science.gov (United States)

    Matosevic, Sandro; Paegel, Brian M.

    2013-11-01

    Eukaryotic subcellular membrane systems, such as the nuclear envelope or endoplasmic reticulum, present a rich array of architecturally and compositionally complex supramolecular targets that are as yet inaccessible. Here we describe layer-by-layer phospholipid membrane assembly on microfluidic droplets, a route to structures with defined compositional asymmetry and lamellarity. Starting with phospholipid-stabilized water-in-oil droplets trapped in a static droplet array, lipid monolayer deposition proceeds as oil/water-phase boundaries pass over the droplets. Unilamellar vesicles assembled layer-by-layer support functional insertion both of purified and of in situ expressed membrane proteins. Synthesis and chemical probing of asymmetric unilamellar and double-bilayer vesicles demonstrate the programmability of both membrane lamellarity and lipid-leaflet composition during assembly. The immobilized vesicle arrays are a pragmatic experimental platform for biophysical studies of membranes and their associated proteins, particularly complexes that assemble and function in multilamellar contexts in vivo.

  18. Tunnelling without barriers

    International Nuclear Information System (INIS)

    Lee, K.

    1987-01-01

    The evolution in flat and curved space-time of quantum fields in theories with relative flat potential and its consequences are considered. It is shown that bubble nucleation, a quantum mechanical tunnelling process, may occur in flat space-time, having a bounce solution, even if V(phi) has no barrier. It is shown that bubble nucleation can also occur in curved space-time even though there is no bounce solution in the standard formalism for the bubble nucleation rate in curved space-time. Additionally, bubbles can nucleate during the slow rolling period on the potential in flat and curved space-time, in this case also there is no bounce solution. It is known in the new inflationary scenario that energy density perturbations caused by quantum fluctuations of the scalar field can satisfy the presently observed bounds on density perturbations. Bubble nucleation during the slow rolling period also gives rise to density perturbations. For a model potential density perturbations by bubbles are calculated at the horizon reentering. By applying the bound from the almost isotropic microwave black body radiation on these density perturbations, a constraint on the model potential is obtained. Finally, some further implications on the galaxy formation and applications in more realistic potential are discussed

  19. Development of engineered barrier

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Kwan Sik; Cho, Won Jin; Lee, Jae Owan; Kim, Seung Soo; Kang, Mu Ja

    1999-03-01

    Engineered barrier development was carried out into the three research fields : waste form, disposal container, and buffer. The waste form field dealt with long-term leaching tests with borosilicate waste glasses surrounded by compacted bentonite. The leach rate decreased with increasing time, and was higher for the waste specimen rich in U and Na. In the container field, preliminary concepts of disposal containers were recommended by conducting structural analysis, thermal analysis, and shielding analysis, and major properties of stainless steel, copper, and titanium as a container material were surveyed. The sensitization degrees of SUS 316 and316L were lower than those of SUS 304 and 304L, respectively. The crevice corrosion of sensitized stainless steel was sensitive to the content of salt. Researches into the buffer included establishment of its performance criteria followed by investigating major properties of buffer using potential material in Korea. Experiments were made for measuring hydraulic conductivities, swelling properties, mechanical properties, thermal conductivities, pore-water chemistry properties, and adsorption properties was also investigated. (author)

  20. Omnidirectional ventilated acoustic barrier

    Science.gov (United States)

    Zhang, Hai-long; Zhu, Yi-fan; Liang, Bin; Yang, Jing; Yang, Jun; Cheng, Jian-chun

    2017-11-01

    As an important problem in acoustics, sound insulation finds applications in a great variety of situations. In the existing schemes, however, there has always been a trade-off between the thinness of sound-insulating devices and their ventilating capabilities, limiting their potentials in the control of low-frequency sound in high ventilation environments. Here, we design and experimentally implement an omnidirectional acoustic barrier with a planar profile, subwavelength thickness ( 0.18 λ ), yet high ventilation. The proposed mechanism is based on the interference between the resonant scattering of discrete states and the background scattering of continuous states which induces a Fano-like asymmetric transmission profile. Benefitting from the binary-structured design of the coiled unit and hollow pipe, it maximally simplifies the design and fabrication while ensuring the ventilation for all the non-resonant units with open tubes. The simulated and measured results agree well, showing the effectiveness of our proposed mechanism to block low frequency sound coming from various directions while allowing 63% of the air flow to pass. We anticipate our design to open routes to design sound insulators and to enable applications in traditionally unattainable cases such as those calling for noise reduction and cooling simultaneously.

  1. Mobilitet, barrierer & muligheder

    DEFF Research Database (Denmark)

    Petersen, Mimi

    2011-01-01

    stereotypering. På den ene side peger udsagn fra de unge drenge på en oplevelse af at blive kriminaliseret i kraft af deres køn (det maskuline kombineret med at have en anden hudfarve). Og de unge piger oplever, at de udover at blive kategoriseret som ”indvandrere” også bliver kategoriseret som passive, umyndige...... som en vej ud af irakiske Kurdistan, men ikke tilbage til Danmark. Drengene fra familier med bedre økonomiske ressourcer giver udtryk for, ønske om at rejse til andre lande. På grund af begrænsede sproglige kompetencer oplever hovedparten af de unge (både i Danmark og i irakiske Kurdistan) barrierer i...... har planer for at flytte fra Kurdistan. De har dansk statsborgerskab, men de vil ikke tilbage til Danmark. I de fortællinger, som afhandlingen bygger på, er det tydeligt at samspillet mellem flere sociale dimensioner, spiller ind på de unges selvforståelse, tilhørsforhold, erfaringer og deres valg af...

  2. Development of engineered barrier

    International Nuclear Information System (INIS)

    Chun, Kwan Sik; Cho, Won Jin; Lee, Jae Owan; Kim, Seung Soo; Kang, Mu Ja

    1999-03-01

    Engineered barrier development was carried out into the three research fields : waste form, disposal container, and buffer. The waste form field dealt with long-term leaching tests with borosilicate waste glasses surrounded by compacted bentonite. The leach rate decreased with increasing time, and was higher for the waste specimen rich in U and Na. In the container field, preliminary concepts of disposal containers were recommended by conducting structural analysis, thermal analysis, and shielding analysis, and major properties of stainless steel, copper, and titanium as a container material were surveyed. The sensitization degrees of SUS 316 and 316L were lower than those of SUS 304 and 304L, respectively. The crevice corrosion of sensitized stainless steel was sensitive to the content of salt. Researches into the buffer included establishment of its performance criteria followed by investigating major properties of buffer using potential material in Korea. Experiments were made for measuring hydraulic conductivities, swelling properties, mechanical properties, thermal conductivities, pore-water chemistry properties, and adsorption properties was also investigated. (author)

  3. Energy Barriers and Hysteresis in Martensitic Phase Transformations

    Science.gov (United States)

    2008-08-01

    glacial acetic acid (CH3COOH) and 10-15% perchloric acid (HCLO4) by volume, the cathode was stainless steel , the anode was stainless steel or Ti, the...Submitted to Acta Materialia Energy barriers and hysteresis in martensitic phase transformations Zhiyong Zhang, Richard D. James and Stefan Müller...hysteresis based on the growth from a small scale of fully developed austenite martensite needles. In this theory the energy of the transition layer plays a

  4. Effect of a hard coat layer on buckle delamination of thin ITO layers on a compliant elasto-plastic substrate: an experimental–numerical approach

    NARCIS (Netherlands)

    Sluis, van der O.; Abdallah, Amir; Bouten, P.C.P.; Timmermans, P.H.M.; Toonder, den J.M.J.; With, de G.

    2011-01-01

    Layer buckling and delamination is a common interfacial failure phenomenon in thin film multi-layer structures that are used in flexible display applications. Typically, the substrate is coated on both sides with a hybrid coating, calleda hard coat (HC), which acts as a gas barrier and also

  5. Double layers in space

    International Nuclear Information System (INIS)

    Carlqvist, P.

    1982-07-01

    For more than a decade it has been realised that electrostatic double layers are likely to occur in space. We briefly discuss the theoretical background of such double layers. Most of the paper is devoted to an account of the observational evidence for double layers in the ionosphere and magnetosphere of the Earth. Several different experiments are reviewed including rocket and satellite measurements and ground based observations. It is concluded that the observational evidence for double layers in space is very strong. The experimental results indicate that double layers with widely different properties may exist in space. (Author)

  6. Double layers in space

    International Nuclear Information System (INIS)

    Carlqvist, P.

    1982-01-01

    For more than a decade it has been realised that electrostatic double layers are likely to occur in space. The author briefly discusses the theoretical background of such double layers. Most of the paper is devoted to an account of the observational evidence for double layers in the ionosphere and magnetosphere of the Earth. Several different experiments are reviewed including rocket and satellite measurements and ground based observations. It is concluded that the observational evidence for double layers in space is very strong. The experimental results indicate that double layers with widely different properties may exist in space. (Auth.)

  7. Acoustic impact on the laminated plates placed between barriers

    Science.gov (United States)

    Paimushin, V. N.; Gazizullin, R. K.; Fedotenkov, G. V.

    2016-11-01

    On the basis of previously derived equations, analytical solutions are established on the forced vibrations of two-layer and three-layers rectangular plates hinged in an opening of absolutely rigid walls during the transmission of monoharmonic sound waves. It is assumed that the partition wall is situated between two absolutely rigid barriers, one of them by harmonic oscillation with a given displacements amplitude on the plate forms the incident sound wave, and the other is stationary and has a coating of deformable energy absorbing material with high damping properties. The behavior of acoustic environments in the spaces between the deformable plate and the barriers described by classical wave equation based on the ideal compressible fluid model. To describe the process of dynamic deformation of the energy absorbing coating of fixed barrier, two-dimensional equations of motion based on the use of models transversely soft layer are derived with a linear approximation of the displacement field in the thickness direction of the coating and taking into account the damping properties of the material and the hysteresis model for it. The influence of the physical and mechanical properties of the concerned mechanical system and the frequency of the incident sound wave on the parameters of its insulation properties of the plate, as well as on the parameters of the stress-strain state of the plate has been analyzed.

  8. Double internal transport barrier triggering mechanism in tokamak plasmas

    International Nuclear Information System (INIS)

    Dong, Jiaqi; Mou, Zongze; Long, Yongxing; Mahajan, Swadesh M.

    2004-01-01

    Sheared flow layers created by energy released in magnetic reconnection processes are studied with the magneto hydrodynamics (MHD), aimed at internal transport barrier (ITB) dynamics. The double tearing mode induced by electron viscosity is investigated and proposed as a triggering mechanism for double internal transport barrier (DITB) observed in tokamak plasmas with non-monotonic safety factor profiles. The quasi-linear development of the mode is simulated and the emphasis is placed on the structure of sheared poloidal flow layers formed in the vicinity of the magnetic islands. For viscosity double tearing modes, it is shown that the sheared flows induced by the mode may reach the level required by the condition for ITB formation. Especially, the flow layers are found to form just outside the magnetic islands. The scaling of the generated velocity with plasma parameters is given. Possible explanation for the experimental observations that the preferential formation of transport barriers in the proximity of low order rational surface is discussed. (author)

  9. Defective channels lead to an impaired skin barrier.

    Science.gov (United States)

    Blaydon, Diana C; Kelsell, David P

    2014-10-15

    Channels are integral membrane proteins that form a pore, allowing the passive movement of ions or molecules across a membrane (along a gradient), either between compartments within a cell, between intracellular and extracellular environments or between adjacent cells. The ability of cells to communicate with one another and with their environment is a crucial part of the normal physiology of a tissue that allows it to carry out its function. Cell communication is particularly important during keratinocyte differentiation and formation of the skin barrier. Keratinocytes in the skin epidermis undergo a programme of apoptosis-driven terminal differentiation, whereby proliferating keratinocytes in the basal (deepest) layer of the epidermis stop proliferating, exit the basal layer and move up through the spinous and granular layers of the epidermis to form the stratum corneum, the external barrier. Genes encoding different families of channel proteins have been found to harbour mutations linked to a variety of rare inherited monogenic skin diseases. In this Commentary, we discuss how human genetic findings in aquaporin (AQP) and transient receptor potential (TRP) channels reveal different mechanisms by which these channel proteins function to ensure the proper formation and maintenance of the skin barrier. © 2014. Published by The Company of Biologists Ltd.

  10. Quantitative assessment of safety barrier performance in the prevention of domino scenarios triggered by fire

    International Nuclear Information System (INIS)

    Landucci, Gabriele; Argenti, Francesca; Tugnoli, Alessandro; Cozzani, Valerio

    2015-01-01

    The evolution of domino scenarios triggered by fire critically depends on the presence and the performance of safety barriers that may have the potential to prevent escalation, delaying or avoiding the heat-up of secondary targets. The aim of the present study is the quantitative assessment of safety barrier performance in preventing the escalation of fired domino scenarios. A LOPA (layer of protection analysis) based methodology, aimed at the definition and quantification of safety barrier performance in the prevention of escalation was developed. Data on the more common types of safety barriers were obtained in order to characterize the effectiveness and probability of failure on demand of relevant safety barriers. The methodology was exemplified with a case study. The results obtained define a procedure for the estimation of safety barrier performance in the prevention of fire escalation in domino scenarios. - Highlights: • We developed a methodology for the quantitative assessment of safety barriers. • We focused on safety barriers aimed at preventing domino effect triggered by fire. • We obtained data on effectiveness and availability of the safety barriers. • The methodology was exemplified with a case study of industrial interest. • The results showed the role of safety barriers in preventing fired domino escalation

  11. A nuclide transfer model for barriers of the seabed repository using response function

    International Nuclear Information System (INIS)

    Lee, Youn Myoung; Kang, Chul Hyung; Hahn, Pil Soo

    1996-01-01

    A nuclide transfer by utilizing mass transfer coefficient and barrier response function defined for each barrier is proposed, by which the final nuclide transfer rate into the sea water can be evaluated. When simple and immediate quantification of the nuclide release is necessary in the conservative aspect, using this kind of approach may be advantageous since each layered barrier can be treated separately from other media in series in the repository system, making it possible to apply separate solutions in succession to other various media. Although one disadvantage is that while flux continuity can be maintained at the interface by using the exit nuclide flux from the first medium as the source flux for the next one, there may be no guarantee for concentration continuity, this problem could be eliminated assuming that there is no boundary resistance to mass transfer across the interface. Mass transfer coefficient can be determined by the assumption that the nuclide concentration gradient at the interface between adjacent barriers remains constant and barrier response function is obtained from an analytical expression for nuclide flow rate out of each barrier in response to a unit impulse into the barrier multiplied by mass transfer coefficient. Total time-dependent nuclide transfer rate from the barrier can then be obtained by convoluting the response function for the barrier with a previously calculated set of time-varying input of nuclide flow rate for the previous barrier. 18 refs., 5 figs. (author)

  12. Engineered Barrier Testing at the INEEL Engineered Barriers Test Facility: FY-1997 and FY-1998

    International Nuclear Information System (INIS)

    Keck, K. N.; Porro, I.

    1998-01-01

    Engineered barriers of two designs are being tested at the Engineered Barriers Test Facility (EBTF) at the Idaho National Engineering and Environmental Laboratory. This report describes the test facility, barrier designs, and instruments used to monitor the test plots. Wetting tests conducted on the test plots in FY-97 are described and data collected from monitoring the test plots before, during and after the wetting tests are used to evaluate the performance of the covers during FY-97 and FY-98. Replicates of two engineered barrier designs were constructed in the EBTF cells. The first design comprises a thick, vegetated soil cover. The second design incorporates a capillary/biobarrier within the vegtated soil cover. The capillary barrier uses the textural break between an upper, fine textured soil and a lower, coarser-textured gravel layer to inhibit drainage under unsaturated conditions while increasing soil moisture storage in the root zone. Evaporation and transpiration by plants (although the test plots have not yet been vegetated) are used to recycle water stored in the soil back to the atmosphere. A geotextile fabric is used to maintain separation of the soil and gravel layers. A thick layer of cobbles beneath the gravel layer serves as a biobarrier to prevent intrusion of plant roots and burrowing animals into underlying waste (there is no waste in the test plots). Each test plot was instrumented with time domain reflectometry probes and neutron probe access tubes to measure moisture contents, tensiometers, heat dissipation sensors, and thermocouple psychrometers to measure matric potentials, thermocouples to measure soil temperature, and ion-exchange resin beads to monitor tracer movement. Each drainage sump is equipped with a tipping bucket instrument and pressure transducer to measure drainage. Precipitation is measured using a heated rain gauge located at the EBTF. Instrument calibration equation coefficients are presented, and data reduction

  13. Tritium/hydrogen barrier development

    International Nuclear Information System (INIS)

    Hollenberg, G.W.; Simonen, E.P.; Kalinen, G.; Terlain, A.

    1994-06-01

    A review of hydrogen permeation barriers that can be applied to structural metals used in fusion power plants is presented. Both implanted and chemically available hydrogen isotopes must be controlled in fusion plants. The need for permeation barriers appears strongest in Li17-Pb blanket designs, although barriers also appear necessary for other blanket and coolant systems. Barriers that provide greater than a 1000 fold reduction in the permeation of structural metals are desired. In laboratory experiments, aluminide and titanium ceramic coatings provide permeation reduction factors, PRFS, from 1000 to over 100,000 with a wide range of scatter. The rate-controlling mechanism for hydrogen permeation through these barriers may be related to the number and type of defects in the barriers. Although these barriers appear robust and resistant to liquid metal corrosion, irradiation tests which simulate blanket environments result in very low PRFs in comparison to laboratory experiments, i.e., <150. It is anticipated from fundamental research activities that the REID enhancement of hydrogen diffusion in oxides may contribute to the lower permeation reduction factors during in-reactor experiments

  14. Enershield : energy saving air barriers

    Energy Technology Data Exchange (ETDEWEB)

    Hallihan, D. [Enershield Industries Ltd., Edmonton, AB (Canada)

    2008-07-01

    Enershield Industries is a leader in air barrier technology and provides solution for the Canadian climate. This presentation described the advantages of air barriers and the impact of rising energy costs. An air barrier is used to separate areas of differing environments and makes existing building systems more efficient. This presentation discussed how an air barrier works. It also identified how Enershield Industries calculates energy savings. It described air barrier applications and those who use barrier technology. These include the commercial and industrial sector as well as the personnel and retail sector. Barrier technology can be used for cold storage; vehicle and equipment washes; food processing; and environmental separation. Features and benefits such as the ability to create seal, acoustic insulation, and long term durability were also discussed. Last, the presentation addressed model selection and design criteria issues. Design criteria that were presented included a discussion of acoustic installation, articulating nozzles, scroll cased fans, and structural frame. Other design criteria presented were galvanized frames, telescopic sliders, and off the shelf parts. It was concluded that the ability to reduce energy consumption and enhance employee/client comfort is beneficial to the employer as well as to the employee. figs.

  15. Deactivation of SCR catalysts by potassium: A study of potential alkali barrier materials

    DEFF Research Database (Denmark)

    Olsen, Brian Kjærgaard; Kügler, Frauke; Castellino, Francesco

    2017-01-01

    The use of coatings in order to protect vanadia based SCR catalysts against potassium poisoning has been studied by lab- and pilot-scale experiments. Three-layer pellets, consisting of a layer ofa potential coating material situated between layers of fresh and potassium poisoned SCR catalyst, were...... the coating process. Potassium had to some extent penetrated the MgO coat, and SEM analysis revealed it to be rather thick and fragile. Despite these observations, the coating did protect the SCR catalyst against potassium poisoning to some degree, leaving promise of further optimization....... used to test the ability of the barrier layer to block the diffusion of potassium across the pellet. Of MgO, sepiolite and Hollandite manganese oxide, MgO was the most effective potassium barrier, and no potassium was detected in the MgO layer upon exposure to SCR conditions for 7 days. Two monoliths...

  16. Penetration through the Skin Barrier

    DEFF Research Database (Denmark)

    Nielsen, Jesper Bo; Benfeldt, Eva; Holmgaard, Rikke

    2016-01-01

    The skin is a strong and flexible organ with barrier properties essential for maintaining homeostasis and thereby human life. Characterizing this barrier is the ability to prevent some chemicals from crossing the barrier while allowing others, including medicinal products, to pass at varying rates......-through diffusion cells) as well as in vivo methods (microdialysis and microperfusion). Then follows a discussion with examples of how different characteristics of the skin (age, site and integrity) and of the penetrants (size, solubility, ionization, logPow and vehicles) affect the kinetics of percutaneous...

  17. Vehicle barrier with access delay

    Science.gov (United States)

    Swahlan, David J; Wilke, Jason

    2013-09-03

    An access delay vehicle barrier for stopping unauthorized entry into secure areas by a vehicle ramming attack includes access delay features for preventing and/or delaying an adversary from defeating or compromising the barrier. A horizontally deployed barrier member can include an exterior steel casing, an interior steel reinforcing member and access delay members disposed within the casing and between the casing and the interior reinforcing member. Access delay members can include wooden structural lumber, concrete and/or polymeric members that in combination with the exterior casing and interior reinforcing member act cooperatively to impair an adversarial attach by thermal, mechanical and/or explosive tools.

  18. Big Data as Information Barrier

    Directory of Open Access Journals (Sweden)

    Victor Ya. Tsvetkov

    2014-07-01

    Full Text Available The article covers analysis of ‘Big Data’ which has been discussed over last 10 years. The reasons and factors for the issue are revealed. It has proved that the factors creating ‘Big Data’ issue has existed for quite a long time, and from time to time, would cause the informational barriers. Such barriers were successfully overcome through the science and technologies. The conducted analysis refers the “Big Data” issue to a form of informative barrier. This issue may be solved correctly and encourages development of scientific and calculating methods.

  19. Roll-to-roll vacuum deposition of barrier coatings

    CERN Document Server

    Bishop, Charles A

    2015-01-01

    It is intended that the book will be a practical guide to provide any reader with the basic information to help them understand what is necessary in order to produce a good barrier coated web or to improve the quality of any existing barrier product. After providing an introduction, where the terminology is outlined and some of the science is given (keeping the mathematics to a minimum), including barrier testing methods, the vacuum deposition process will be described. In theory a thin layer of metal or glass-like material should be enough to convert any polymer film into a perfect barrier material. The reality is that all barrier coatings have their performance limited by the defects in the coating. This book looks at the whole process from the source materials through to the post deposition handling of the coated material. This holistic view of the vacuum coating process provides a description of the common sources of defects and includes the possible methods of limiting the defects. This enables readers...

  20. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  1. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

    2012-01-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  2. Gas permeability of bentonite barriers: development, construction and testing of a measurement system

    Directory of Open Access Journals (Sweden)

    Heraldo Nunes Pitanga

    Full Text Available Abstract This article proposes a testing device to quickly and reliably estimate the gas permeability of bentonite-based clay barriers used in landfill cover systems. The testing methodology is based on a transient gas flow regime that passes through the barrier, therefore not requiring the use of sophisticated equipment that aim to maintain constant differential pressure and measure the gas flow, common requirements for testing methods under a permanent flow regime. To confirm the feasibility of the proposed technique, tests were performed on a pure hydrated bentonite layer, which subsequently encompassed samples of geosynthetic clay liner (GCL at different moisture contents. Geosynthetic clay liners are often selected as a part of the barrier layer for cover systems in solid waste landfills to prevent infiltration of rainfall and migration of biogas into the atmosphere. The results confirmed the equipment reliability and differentiate the different responses of the gas flow barriers studied, considering their different compositions and different moistures.

  3. Fusion barrier characteristics of actinides

    Science.gov (United States)

    Manjunatha, H. C.; Sridhar, K. N.

    2018-03-01

    We have studied fusion barrier characteristics of actinide compound nuclei with atomic number range 89 ≤ Z ≤ 103 for all projectile target combinations. After the calculation of fusion barrier heights and positions, we have searched for their parameterization. We have achieved the empirical formula for fusion barrier heights (VB), positions (RB), curvature of the inverted parabola (ħω) of actinide compound nuclei with atomic number range 89 ≤ Z ≤ 103 for all projectile target combinations (6 projectile target combinations. The values produced by the present formula are also compared with experiments. The present pocket formula produces fusion barrier characteristics of actinides with the simple inputs of mass number (A) and atomic number (Z) of projectile-targets.

  4. Transport barrier in Helical system

    International Nuclear Information System (INIS)

    Ida, Katsumi

    1998-01-01

    Experiments on the transport barrier in Helical plasmas are reviewed. There are two mechanisms of transport improvement, that results in the formation of the transport barrier. One is the improvement of neoclassical transport by reducing the ripple loss with radial electric field, which exist only in helical plasma. The other is the improvement of anomalous transport due to the suppression of fluctuations associated with a radial electric field shear both in tokamak and helical plasma. The formation of the transport barrier can be triggered by the radial electric field shear associated with the transition of the radial electric field (L/H transition or ion-electron root transition) or the peaked density or the optimization of magnetic field shear. The mechanisms of transport barrier formation are also discussed. (author). 60 refs

  5. Coastal Structures and Barriers 2012

    Data.gov (United States)

    California Natural Resource Agency — This dataset is a compilation of the UCSC Sand Retention Structures, MC Barriers, and USACE Coastal Structures. UCSC Sand Retention Structures originate from a...

  6. Engineered barriers: current status 1989

    International Nuclear Information System (INIS)

    Atkinson, A.; Marsh, G.B.

    1989-06-01

    This report summarises the current state of research relevant to assessing the performance of engineered barriers made of steel and concrete in radioactive waste repositories. The objective of these barriers is to contain substantially the radionuclides within them by providing both physical and chemical impediment to their release. The physical barriers are of most value for highly soluble isotopes with relatively short half-lives (eg 137 Cs), since they can provide a measure of containment until a large fraction of the activity has decayed. In addition they can facilitate retrievability for some period after disposal. The chemical barriers operate by beneficial conditioning of the near field groundwater and providing sites for sorption of radionuclides. Both of these reduce the aqueous concentration of radionuclides in the near field. (author)

  7. Numerical simulation of flood barriers

    Science.gov (United States)

    Srb, Pavel; Petrů, Michal; Kulhavý, Petr

    This paper deals with testing and numerical simulating of flood barriers. The Czech Republic has been hit by several very devastating floods in past years. These floods caused several dozens of causalities and property damage reached billions of Euros. The development of flood measures is very important, especially for the reduction the number of casualties and the amount of property damage. The aim of flood control measures is the detention of water outside populated areas and drainage of water from populated areas as soon as possible. For new flood barrier design it is very important to know its behaviour in case of a real flood. During the development of the barrier several standardized tests have to be carried out. Based on the results from these tests numerical simulation was compiled using Abaqus software and some analyses were carried out. Based on these numerical simulations it will be possible to predict the behaviour of barriers and thus improve their design.

  8. Large-scale field testing on flexible shallow landslide barriers

    Science.gov (United States)

    Bugnion, Louis; Volkwein, Axel; Wendeler, Corinna; Roth, Andrea

    2010-05-01

    the thickness of the failure layer and the width of the possible failure are essential for the required barrier design parameter height and width. First results of the calculated drag coefficients of dynamic impact pressure measurements showed that the dynamic coefficient cw is much lower than 1.0 which is contradictory to most of existing dimensioning property protection guidelines. It appears to us that special adaptation to the system like smaller mesh sizes and special ground-barrier interface compared to normal rock-fall barriers and channelised debris flow barriers are necessary to improve the retention behavior of shallow landslide barriers. Detailed analysis of the friction coefficient in relationship with pore water pressure measurements gives interesting insights into the dynamic of fluid-solid mixed flows. Impact pressures dependencies on flow features are analyzed and discussed with respect to existing models and guidelines for shallow landslides.

  9. Undefined role of mucus as a barrier in ocular drug delivery.

    Science.gov (United States)

    Ruponen, Marika; Urtti, Arto

    2015-10-01

    Mucus layer covers the ocular surface, and soluble mucins are also present in the tear fluid. After topical ocular drug administration, the drugs and formulations may interact with mucus layer that may act as a barrier in ocular drug delivery. In this mini-review, we illustrate the mucin composition of the ocular surface and discuss the influence of mucus layer on ocular drug absorption. Based on the current knowledge the role of mucus barrier in drug delivery is still undefined. Furthermore, interactions with mucus may prolong the retention of drug formulations on the ocular surface. Mucus may decrease or increase ocular bioavailability depending on the magnitude of its role as barrier or retention site, respectively. Mechanistic studies are needed to clarify the role of mucin in ocular drug delivery. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

    Science.gov (United States)

    Skromme, B. J.; Luckowski, E.; Moore, K.; Bhatnagar, M.; Weitzel, C. E.; Gehoski, T.; Ganser, D.

    2000-03-01

    Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.

  11. Material Barriers to Diffusive Mixing

    Science.gov (United States)

    Haller, George; Karrasch, Daniel

    2017-11-01

    Transport barriers, as zero-flux surfaces, are ill-defined in purely advective mixing in which the flux of any passive scalar is zero through all material surfaces. For this reason, Lagrangian Coherent Structures (LCSs) have been argued to play the role of mixing barriers as most repelling, attracting or shearing material lines. These three kinematic concepts, however, can also be defined in different ways, both within rigorous mathematical treatments and within the realm of heuristic diagnostics. This has lead to a an ever-growing number of different LCS methods, each generally identifying different objects as transport barriers. In this talk, we examine which of these methods have actual relevance for diffusive transport barriers. The latter barriers are arguably the practically relevant inhibitors in the mixing of physically relevant tracers, such as temperature, salinity, vorticity or potential vorticity. We demonstrate the role of the most effective diffusion barriers in analytical examples and observational data. Supported in part by the DFG Priority Program on Turbulent Superstructures.

  12. Economic alternatives for containment barriers

    International Nuclear Information System (INIS)

    Nicholson, P.J.; Jasperse, B.H.; Fisher, M.J.

    1997-01-01

    Fixation, barriers, and containment of existing landfills and other disposal areas are often performed by insitu auger type soil mixing and jet grouting. Cement or other chemical reagents are mixed with soil to form both vertical and horizontal barriers. Immobilization of contaminants can be economically achieved by mixing soil and the contaminants with reagents that solidify or stabilize the contaminated area. Developed in Japan, and relatively new to the United States, the first large scale application was for a vertical barrier at the Jackson Lake Dam project in 1986. This technology has grown in both the civil and environmental field since. The paper describes current United States practice for Deep Soil Mixing (over 12 meters in depth), and Shallow Soil Mixing for vertical barriers and stabilization/solidification, and Jet Grouting for horizontal and vertical barriers. Creating very low permeability barriers at depth with minimal surface return often makes these techniques economical when compared to slurry trenches. The paper will discuss equipment, materials, soil and strength parameters, and quality control

  13. Air barrier systems: Construction applications

    Energy Technology Data Exchange (ETDEWEB)

    Perrault, J.C

    1989-01-01

    An examination is presented of how ordinary building materials can be used in an innovative manner to design, detail, and construct effective air barrier systems for common types of walls. For residential construction, the air drywall approach uses the interior gypsum board as the main component of the wall air barrier system. Joints between the gypsum board and adjacent materials or assemblies are sealed by gaskets. In commercial construction, two different techniques are employed for using gypsum board as air barrier material: the accessible drywall and non-accessible drywall approaches. The former is similar to the air drywall approach except that high performance sealants are used instead of gaskets. In the latter approach, exterior drywall sheathing is the main component of the air barrier system; joints between boards are taped and joints between boards and other components are sealed using elastomeric membrane strips. For various types of commercial and institutional buildings, metal air barrier systems are widely used and include pre-engineered curtain walls or sheet metal walls. Masonry wall systems are regarded as still the most durable, fireproof, and soundproof wall type available but an effective air barrier system has typically been difficult to implement. Factory-made elastomeric membranes offer the potential to provide airtightness to masonry walls. These membranes are applied on the entire masonry wall surface and are used to make airtight connections with other building components. Two types of product are available: thermofusible and peel-and-stick membranes. 5 figs.

  14. Multi-layers castings

    Directory of Open Access Journals (Sweden)

    J. Szajnar

    2010-01-01

    Full Text Available In paper is presented the possibility of making of multi-layers cast steel castings in result of connection of casting and welding coating technologies. First layer was composite surface layer on the basis of Fe-Cr-C alloy, which was put directly in founding process of cast carbon steel 200–450 with use of preparation of mould cavity method. Second layer were padding welds, which were put with use of TIG – Tungsten Inert Gas surfacing by welding technology with filler on Ni matrix, Ni and Co matrix with wolfram carbides WC and on the basis on Fe-Cr-C alloy, which has the same chemical composition with alloy, which was used for making of composite surface layer. Usability for industrial applications of surface layers of castings were estimated by criterion of hardness and abrasive wear resistance of type metal-mineral.

  15. The formation of hydrogen permeation barriers on steels by aluminising

    Science.gov (United States)

    Forcey, K. S.; Ross, D. K.; Wu, C. H.

    1991-06-01

    An extensive investigation has been carried out into the effectiveness of aluminised layers as permeation barriers on AISI 316L stainless and DIN 1.4914 martensitic steels. The study involved measurement of the hydrogen permeation rate through commercially aluminised steel discs of thicknesses in the range 1-1.6 mm, at temperatures between 250 and 600 °C and for an upstream hydrogen pressure of 10 5 Pa. The composition and structure of the aluminide layers were investigated by a number of techniques such as SEM, electron beam microprobe and X-ray diffraction. Accelerator based techniques such as RBS and NRA were employed to study the top micron or so of the surfaces of the samples. By these techniques it was found that the effectiveness of the permeation barrier depended on the formation of a thin surface oxide layer consisting of Al 2O 3. It was found that the permeation rate through the aluminised steels could be reduced by 3-4 orders of magnitude by forming a surface oxide layer up to a micron or so in thickness.

  16. Investigation of endothelial growth using a sensors-integrated microfluidic system to simulate physiological barriers

    Directory of Open Access Journals (Sweden)

    Rajabi Taleieh

    2015-09-01

    Full Text Available In this paper we present a microfluidic system based on transparent biocompatible polymers with a porous membrane as substrate for various cell types which allows the simulation of various physiological barriers under continuous laminar flow conditions at distinct tunable shear rates. Besides live cell and fluorescence microscopy, integrated electrodes enable the investigation of the permeability and barrier function of the cell layer as well as their interaction with external manipulations using the Electric Cell-substrate Impedance Sensing (ECIS method.

  17. Contaminant Flux Reduction Barriers for Managing Difficult-to-Treat Source Zones in Unconsolidated Media

    Science.gov (United States)

    2017-06-20

    estimated viscosity of 3-4 cP.  Solutions-IES Novel Silica Gel/Veg-Oil Grout: 5 wt- % of emulsified vegetable oil (EVO), 10 wt-% of sodium...site must have a lower low permeability unit such as a clay to prevent up flow; and a four sided barrier is recommended (three sided barriers are...depth to groundwater (ង ft)  Transmissive zone preferably with an underlying clay layer  Good accessibility to source zone  Availability of

  18. Hanford Permanent Isolation Barrier Program: Asphalt technology data and status report - FY 1994

    Energy Technology Data Exchange (ETDEWEB)

    Freeman, H.D.; Romine, R.A.; Zacher, A.H.

    1994-09-01

    The asphalt layer within the Hanford Permanent Isolation Barrier (HPIB) is an important component of the overall design. This layer provides a RCRA equivalent backup to the overlying earthen layers in the unlikely event that these layers are not able to reduce the infiltration rate to less than 0.05 cm/yr. There is only limited amount of information on using asphalt for a moisture infiltration barrier over the long times required by the HPIB. Therefore, a number of activities are under way, as part of the Barrier Development Program, to obtain data on the performance of asphalt as a moisture barrier in a buried environment over a 1000-year period. These activities include (1) determining RCRA equivalency, (2) measurement of physical properties, (3) measurement of aging characteristics, and (4) relationship to ancient asphalt analogs. During FY 1994 progress was made on all of these activities. Studies were conducted both in the laboratory and on the prototype barrier constructed over the 216-B-57 crib in the 200 East Area on the Hanford Site. This report presents results obtained from the asphalt technology tasks during FY 1994. Also included are updates to planned activities for asphalt analogs and monitoring the asphalt test pad near the prototype barrier. Measurements of hydraulic conductivity on the HMAC portion of the prototype barrier show that the asphalt layers easily meet the RCRA standard of 1 {times} 10{sup -7} cm/s. In-place measurements using a new field falling head technique show an average of 3.66 {times} 10{sup -8} cm/s, while cores taken from the north end of the prototype and measured in a laboratory setup averaged 1.29 {times} 10{sup -9} cm/s. Measurements made on the fluid applied asphalt membrane (polymer-modified asphalt) show an extremely low permeability of less than 1 {times} 10{sup -11} cm/s.

  19. Hanford Permanent Isolation Barrier Program: Asphalt technology data and status report - FY 1994

    International Nuclear Information System (INIS)

    Freeman, H.D.; Romine, R.A.; Zacher, A.H.

    1994-09-01

    The asphalt layer within the Hanford Permanent Isolation Barrier (HPIB) is an important component of the overall design. This layer provides a RCRA equivalent backup to the overlying earthen layers in the unlikely event that these layers are not able to reduce the infiltration rate to less than 0.05 cm/yr. There is only limited amount of information on using asphalt for a moisture infiltration barrier over the long times required by the HPIB. Therefore, a number of activities are under way, as part of the Barrier Development Program, to obtain data on the performance of asphalt as a moisture barrier in a buried environment over a 1000-year period. These activities include (1) determining RCRA equivalency, (2) measurement of physical properties, (3) measurement of aging characteristics, and (4) relationship to ancient asphalt analogs. During FY 1994 progress was made on all of these activities. Studies were conducted both in the laboratory and on the prototype barrier constructed over the 216-B-57 crib in the 200 East Area on the Hanford Site. This report presents results obtained from the asphalt technology tasks during FY 1994. Also included are updates to planned activities for asphalt analogs and monitoring the asphalt test pad near the prototype barrier. Measurements of hydraulic conductivity on the HMAC portion of the prototype barrier show that the asphalt layers easily meet the RCRA standard of 1 x 10 -7 cm/s. In-place measurements using a new field falling head technique show an average of 3.66 x 10 -8 cm/s, while cores taken from the north end of the prototype and measured in a laboratory setup averaged 1.29 x 10 -9 cm/s. Measurements made on the fluid applied asphalt membrane (polymer-modified asphalt) show an extremely low permeability of less than 1 x 10 -11 cm/s

  20. A double layer review

    International Nuclear Information System (INIS)

    Block, L.P.

    1977-06-01

    A review of the main results on electrostatic double layers (sometimes called space charge layers or sheaths) obtained from theory, and laboratory and space experiments up to the spring of 1977 is given. By means of barium jets and satellite probes, double layers have now been found at the altitudes, earlier predicted theoretically. The general potential distribution above the auroral zone, suggested by inverted V-events and electric field reversals, is corroborated. (author)