Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

Science.gov (United States)

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

International Nuclear Information System (INIS)

Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

2014-01-01

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

Formation of biaxial texture in metal films by selective ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

2006-05-15

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

Formation of biaxial texture in metal films by selective ion beam etching

International Nuclear Information System (INIS)

Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

2006-01-01

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

Corrugated megathrust revealed offshore from Costa Rica

Science.gov (United States)

Edwards, Joel H.; Kluesner, Jared; Silver, Eli A.; Brodsky, Emily E.; Brothers, Daniel; Bangs, Nathan L.; Kirkpatrick, James D.; Wood, Ruby; Okamato, Kristina

2018-01-01

Exhumed faults are rough, often exhibiting topographic corrugations oriented in the direction of slip; such features are fundamental to mechanical processes that drive earthquakes and fault evolution. However, our understanding of corrugation genesis remains limited due to a lack of in situ observations at depth, especially at subducting plate boundaries. Here we present three-dimensional seismic reflection data of the Costa Rica subduction zone that image a shallow megathrust fault characterized by corrugated, and chaotic and weakly corrugated topographies. The corrugated surfaces extend from near the trench to several kilometres down-dip, exhibit high reflection amplitudes (consistent with high fluid content/pressure) and trend 11–18° oblique to subduction, suggesting 15 to 25 mm yr−1 of trench-parallel slip partitioning across the plate boundary. The corrugations form along portions of the megathrust with greater cumulative slip and may act as fluid conduits. In contrast, weakly corrugated areas occur adjacent to active plate bending faults where the megathrust has migrated up-section, forming a nascent fault surface. The variations in megathrust roughness imaged here suggest that abandonment and then reestablishment of the megathrust up-section transiently increases fault roughness. Analogous corrugations may exist along significant portions of subduction megathrusts globally.

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming

Energy Technology Data Exchange (ETDEWEB)

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Atomic Layer Etching of Silicon to Solve ARDE-Selectivity-Profile-Uniformity Trade-Offs

Science.gov (United States)

Wang, Mingmei; Ranjan, Alok; Ventzek, Peter; Koshiishi, Akira

2014-10-01

With shrinking critical dimensions, dry etch faces more and more challenges. Minimizing each of aspect ratio dependent etching (ARDE), bowing, undercut, selectivity, and within die uniformly across a wafer are met by trading off one requirement against another. At the root of the problem is that roles radical flux, ion flux and ion energy play may be both good and bad. Increasing one parameter helps meeting one requirement but hinders meeting the other. Self-limiting processes like atomic layer etching (ALE) promise a way to escape the problem of balancing trade-offs. ALE was realized in the mid-1990s but the industrial implementation has been slow. In recent years interest in ALE has revived. We present how ARDE, bowing/selectivity trade-offs may be overcome by varying radical/ion ratio, byproduct re-deposition. We overcome many of the practical implementation issues associated with ALE by precise passivation process control. The Monte Carlo Feature Profile Model (MCFPM) is used to illustrate realistic scenarios built around an Ar/Cl2 chemistry driven etch of Si masked by SiO2. We demonstrate that ALE can achieve zero ARDE and infinite selectivity. Profile control depends on careful management of the ion energies and angles. For ALE to be realized in production environment, tight control of IAD is a necessary. Experimental results are compared with simulation results to provide context to the work.

Electromagnetic radiation of electrons in corrugated graphene

Energy Technology Data Exchange (ETDEWEB)

Ktitorov, S. A., E-mail: ktitorov@mail.ioffe.ru; Myhamadiarov, R. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-08-15

Bremsstrahlung in corrugated single-layer graphene in the presence of a ballistic transport current is analyzed. Radiation of a similar nature is observed in undulators and wigglers. Regular and chaotic corrugations (ripples) are considered. It is shown that the quadratic relation between the Monge membrane function and the synthetic calibration field leads to the appearance of a central peak in the radiation spectral density. Possible formation mechanisms of single-layer graphene corrugation are proposed. In one case, the corrugation is considered as an incommensurate superstructure in a two-dimensional crystal, resulting from instability developing in the optical phonon subsystem with the formation of a periodic soliton train. Corrugation results from the interaction of subsystems. Another possible mechanism consists in instability of the membrane flat state due to strong fluctuations characteristic of two-dimensional systems.

Electromagnetohydrodynamic flow through a microparallel channel with corrugated walls

International Nuclear Information System (INIS)

Buren, Mandula; Jian, Yongjun; Chang, Long

2014-01-01

In this paper a perturbation method is introduced to study the electromagnetohydrodynamic (EMHD) flow in a microparallel channel with slightly corrugated walls. The corrugations of the two walls are periodic sinusoidal waves of small amplitude either in phase or half-period out of phase, and the perturbation solutions of velocity and volume flow rate are obtained. Using numerical computation the effects of the corrugations on the flow are graphically analysed. The results show that the influence of corrugation on the flow decreases with Hartmann number. The phase difference of wall corrugations becomes unimportant when the wavenumber is greater than 3 or when the Hartmann number is greater than 4. With the increase in wavenumber, the decreasing effects of corrugations on the flow increase. When the wavenumber is smaller than the threshold wavenumber (it is a function of Hartmann number) and the wall corrugations are half-period out of phase, the corrugations can enhance the mean velocity of EMHD flow. However, the mean velocity is always decreased when the corrugations are in phase. (paper)

Experimental studies of Steel Corrugated Constructions

Directory of Open Access Journals (Sweden)

Lazarev Yuriy

2016-01-01

Full Text Available The purpose of this particular article is to assess existing calculations of steel corrugated constructions. Steel Corrugated Construction is a perspective type of constructions, which is exhibiting numerous advantages in comparison with one that currently applied in automobile and railroad networks (reinforced concrete water-throughput pipes, reinforced concrete frame bridges. The evaluation of experimental data on models of constructions of this particular type has been carried out in order to improve calculations of Steel Corrugated Constructions.

Corrugated Membrane Nonlinear Deformation Process Calculation

Directory of Open Access Journals (Sweden)

A. S. Nikolaeva

2015-01-01

Full Text Available Elastic elements are widely used in instrumentation. They are used to create a particular interference between the parts, for accumulating mechanical energy, as the motion transmission elements, elastic supports, and sensing elements of measuring devices. Device reliability and quality depend on the calculation accuracy of the elastic elements. A corrugated membrane is rather common embodiment of the elastic element.The corrugated membrane properties depend largely on its profile i.e. a generatrix of the meridian surface.Unlike other types of pressure elastic members (bellows, tube spring, the elastic characteristics of which are close to linear, an elastic characteristic of the corrugated membrane (typical movement versus external load is nonlinear. Therefore, the corrugated membranes can be used to measure quantities, nonlinearly related to the pressure (e.g., aircraft air speed, its altitude, pipeline fluid or gas flow rate. Another feature of the corrugated membrane is that significant movements are possible within the elastic material state. However, a significant non-linearity of membrane characteristics leads to severe complicated calculation.This article is aimed at calculating the corrugated membrane to obtain the elastic characteristics and the deformed shape of the membrane meridian, as well as at investigating the processes of buckling. As the calculation model, a thin-walled axisymmetric shell rotation is assumed. The material properties are linearly elastic. We consider a corrugated membrane of sinusoidal profile. The membrane load is a uniform pressure.The algorithm for calculating the mathematical model of an axisymmetric corrugated membrane of constant thickness, based on the Reissner’s theory of elastic thin shells, was realized as the author's program in C language. To solve the nonlinear problem were used a method of changing the subspace of control parameters, developed by S.S., Gavriushin, and a parameter marching method

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

International Nuclear Information System (INIS)

Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin; Li Tie

2008-01-01

Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min -1 , while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method

Fabrication mechanism of friction-induced selective etching on Si(100) surface.

Science.gov (United States)

Guo, Jian; Song, Chenfei; Li, Xiaoying; Yu, Bingjun; Dong, Hanshan; Qian, Linmao; Zhou, Zhongrong

2012-02-23

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

Enlargement of halloysite clay nanotube lumen by selective etching of aluminum oxide.

Science.gov (United States)

Abdullayev, Elshad; Joshi, Anupam; Wei, Wenbo; Zhao, Yafei; Lvov, Yuri

2012-08-28

Halloysite clay tubes have 50 nm diameter and chemically different inner and outer walls (inner surface of aluminum oxide and outer surface of silica). Due to this different chemistry, the selective etching of alumina from inside the tube was realized, while preserving their external diameter (lumen diameter changed from 15 to 25 nm). This increases 2-3 times the tube lumen capacity for loading and further sustained release of active chemical agents such as metals, corrosion inhibitors, and drugs. In particular, halloysite loading efficiency for the benzotriazole increased 4 times by selective etching of 60% alumina within the tubes' lumens. Specific surface area of the tubes increased over 6 times, from 40 to 250 m(2)/g, upon acid treatment.

Cells on corrugations for pollution control

International Nuclear Information System (INIS)

Clyde, R.

1993-01-01

Old cardboard boxes constitute 12% of landfills. White rot fungus can be grown on the boxes and buried in contaminated soil. The fungus needs air which is entrapped in the corrugations. The fungus is sensitive to large amounts of TNT but it is protected when inside the corrugations. Fast food containers are filling landfills. Lactic acid production needs air and the polymers are biodegradable. When corrugations are put in a half full rotary unit, holes in the valleys make drops, and mass transfer to drops is much higher than to a flat surface. A lab corrugator has been made from an old washing machine wringer, so other fibers can be corrugated. When the bacterium, Zymomonas mobilis is grown on Tyvek fiber, lead and six valent chromium are removed from wastewater in a few seconds. Zymomonas on rotating fibers converts sugar to alcohol in 10--15 minutes and when a light is shown into flat rotating discs, it hits a thin moving film to destroy dioxin. Salt on roads causes millions of dollars damage to bridges and cars but calcium magnesium acetate is not corrosive and can be made with cells on rotating fibers

Selective etching of injection molded zirconia-toughened alumina: Towards osseointegrated and antibacterial ceramic implants.

Science.gov (United States)

Flamant, Quentin; Caravaca, Carlos; Meille, Sylvain; Gremillard, Laurent; Chevalier, Jérôme; Biotteau-Deheuvels, Katia; Kuntz, Meinhard; Chandrawati, Rona; Herrmann, Inge K; Spicer, Christopher D; Stevens, Molly M; Anglada, Marc

2016-12-01

Due to their outstanding mechanical properties and excellent biocompatibility, zirconia-toughened alumina (ZTA) ceramics have become the gold standard in orthopedics for the fabrication of ceramic bearing components over the last decade. However, ZTA is bioinert, which hampers its implantation in direct contact with bone. Furthermore, periprosthetic joint infections are now the leading cause of failure for joint arthroplasty prostheses. To address both issues, an improved surface design is required: a controlled micro- and nano-roughness can promote osseointegration and limit bacterial adhesion whereas surface porosity allows loading and delivery of antibacterial compounds. In this work, we developed an integrated strategy aiming to provide both osseointegrative and antibacterial properties to ZTA surfaces. The micro-topography was controlled by injection molding. Meanwhile a novel process involving the selective dissolution of zirconia (selective etching) was used to produce nano-roughness and interconnected nanoporosity. Potential utilization of the porosity for loading and delivery of antibiotic molecules was demonstrated, and the impact of selective etching on mechanical properties and hydrothermal stability was shown to be limited. The combination of injection molding and selective etching thus appears promising for fabricating a new generation of ZTA components implantable in direct contact with bone. Zirconia-toughened alumina (ZTA) is the current gold standard for the fabrication of orthopedic ceramic components. In the present work, we propose an innovative strategy to provide both osseointegrative and antibacterial properties to ZTA surfaces: we demonstrate that injection molding allows a flexible design of surface micro-topography and can be combined with selective etching, a novel process that induces nano-roughness and surface interconnected porosity without the need for coating, avoiding reliability issues. These surface modifications have the

Passive heat transfer enhancement in 3D corrugated tube

DEFF Research Database (Denmark)

Navickaité, Kristina; Engelbrecht, Kurt; Bahl, Christian

transfer and fluid flow with a constant wall temperature and total pressure drop. The governing equations for these problems were solved using the Finite Element Method. The results of numerical modelling show significant increase in NTU for double corrugated tubes compared to a circular tube. The friction......An innovative hydraulic design was studied for corrugated tube geometry for a heat exchanger. An ellipse based double corrugation was used as a concept of the geometry. The hydraulic diameter (Dh) is maintained over the tube length while the shape of the cross section varies continuously along...... the flow direction. 38 corrugated tubes with a Dh of 5 mm were studied numerically with corrugation heights from 0.23 to 0.69 mm and corrugation periods from 5 to 50 mm for laminar flow with water. Computational fluid dynamics (CFD) is used as a tool to study the effect of corrugation geometry on heat...

Effects of die profile on grain refinement in Al–Mg alloy processed by repetitive corrugation and straightening

Energy Technology Data Exchange (ETDEWEB)

Thangapandian, N., E-mail: erpandian@gmail.com [Department of Mechanical Engineering, College of Engineering Guindy, Anna University, Chennai 600025 (India); Balasivanandha Prabu, S. [Department of Mechanical Engineering, College of Engineering Guindy, Anna University, Chennai 600025 (India); Padmanabhan, K.A. [Centre for Nanotechnology, University of Hyderabad, Hyderabad 500046 (India)

2016-01-01

It is shown that a proper selection of corrugation die profile and die parameters is essential for achieving homogeneous grain refinement in materials subjected to repetitive corrugation and straightening (RCS). An Al–Mg (AA 5083) alloy was subjected to the RCS process using three different corrugation die profiles (V-groove, Flat groove, and Semi-circular groove), followed by straightening to determine the allowable maximum number of passes prior to surface cracking/fracture. Mechanical properties, i.e., hardness and tensile strength of the RCS samples were measured and compared as functions of corrugation die profiles and number of passes and the changes in microstructure. Grain refinement was studied using Electron Back Scattered Diffraction (EBSD) analysis and Transmission Electron Microscopy (TEM).

Composite corrugated structures for morphing wing skin applications

International Nuclear Information System (INIS)

Thill, C; Etches, J A; Bond, I P; Potter, K D; Weaver, P M

2010-01-01

Composite corrugated structures are known for their anisotropic properties. They exhibit relatively high stiffness parallel (longitudinal) to the corrugation direction and are relatively compliant in the direction perpendicular (transverse) to the corrugation. Thus, they offer a potential solution for morphing skin panels (MSPs) in the trailing edge region of a wing as a morphing control surface. In this paper, an overview of the work carried out by the present authors over the last few years on corrugated structures for morphing skin applications is first given. The second part of the paper presents recent work on the application of corrugated sandwich structures. Panels made from multiple unit cells of corrugated sandwich structures are used as MSPs in the trailing edge region of a scaled morphing aerofoil section. The aerofoil section features an internal actuation mechanism that allows chordwise length and camber change of the trailing edge region (aft 35% chord). Wind tunnel testing was carried out to demonstrate the MSP concept but also to explore its limitations. Suggestions for improvements arising from this study were deduced, one of which includes an investigation of a segmented skin. The overall results of this study show that the MSP concept exploiting corrugated sandwich structures offers a potential solution for local morphing wing skins for low speed and small air vehicles

Stiffness Matrices and Anisotropy in the Trapezoidal Corrugated Composite Sheets

Directory of Open Access Journals (Sweden)

Mohammad Golzar

2013-10-01

Full Text Available In the some applications like as morphing technology, high strain and anisotropic behavior are essential design requirements. The corrugated composite sheets due to their special geometries have potential to high deflection under axial loading through longitudinal direction of corrugation. In this research, the strain and the anisotropic behavior of corrugated composite sheets are investigated by fabricating glass/epoxy samples with trapezoidal geometries. For evaluation of the mechanical behavior of the composites the samples were subjected to tension and flexural tests in the longitudinal and transverse directions of corrugation. In order to determine anisotropic behavior of the corrugated sheets, two approaches were introduced: (1 tensile anisotropic (E* and (2 flexural anisotropic (D*. The anisotropic behavior and ultimate deflections were investigated theoretically and experimentally. In this paper, mechanical behaviors based on theoretical and experimental analysis including the elastic constants and stiffness matrices of trapezoidal corrugated composite sheets were studied and the results were verified by finite element method. The results of the numerical and analytical solutions were compared with those of experimental tests. Finally, the load-displacement curves of tensile tests in longitudinal direction of corrugation, the ultimate deflection and anisotropy behavior of these exclusive composite sheets in the corrugated composite sheets were studied experimentally. The experimental results of the trapezoidal corrugated sheets showed that one of the most important parameters in the ultimate strain was amplitude of the corrugation elements. Generally, increasing the amplitude and element per length unit of trapezoidal corrugated specimen led to higher ultimate strain.

Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

Science.gov (United States)

Renteria, E. J.; Muniz, A. J.; Addamane, S. J.; Shima, D. M.; Hains, C. P.; Balakrishnan, G.

2015-05-01

The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2- μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high- resolution x-ray diffraction and atomic force microscopy.

Impact of Corrugated Paperboard Structure on Puncture Resistance

Directory of Open Access Journals (Sweden)

Vaidas Bivainis

2015-03-01

Full Text Available Thanks to its excellentprotective properties, lightness, a reasonable price, and ecology, corrugated paperboardis one of the most popular materials used in the production of packaging for variousproducts. During transportation or storage, packaging with goods can be exposedto the mass of other commodities, dropping from heights and transportationshock loads, which can lead to their puncture damage. Depending on the purposeand size of the packaging, the thickness, grammage, constituent paper layers,numbers of layers and type of fluting of corrugated paperboard used in itsproduction differ. A standard triangular prism, corrugated paperboard fixationplates and a universal tension-compression machine were used to investigate theimpact of corrugated paperboard structure and other parameters on the punctureresistance of the material. The investigation determines the maximum punctureload and estimates energy required to penetrate the corrugated paperboard. Itwas found that the greatest puncture resistance is demonstrated by paperboardwith a larger number of corrugating flutings and the board produced from harderpaper with a smaller amount of recycled paper. It was established that thegrammage of three-layered paperboard with two different fluting profiles has thegreatest impact on the level of static puncture energy.DOI: http://dx.doi.org/10.5755/j01.ms.21.1.5713

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

International Nuclear Information System (INIS)

Seo, Masahiro; Yamaya, Tadafumi

2005-01-01

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

Energy Technology Data Exchange (ETDEWEB)

Seo, Masahiro [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: seo@elechem1-mc.eng.hokudai.ac.jp; Yamaya, Tadafumi [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)

2005-11-10

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width.

Mathematical Model for Thin-walled Corrugated Tube under Axial Compression

Directory of Open Access Journals (Sweden)

Eyvazian Arameh

2016-01-01

Full Text Available In this research, theoretical investigation of corrugated aluminum tubes is performed to predicting the energy absorption characteristics. Aim to deform plastic tubes in predetermined intervals, corrugations are introduced on its surface. Theoretical relations are presented for predicting the energy absorption and mean crushing load of corrugated tubes. Other than that, corrugation helps to control the failure mode.

Heat shrink formation of a corrugated thin film thermoelectric generator

International Nuclear Information System (INIS)

Sun, Tianlei; Peavey, Jennifer L.; David Shelby, M.; Ferguson, Scott; O’Connor, Brendan T.

2015-01-01

Highlights: • Demonstrate and characterize a thermoelectric generator with a corrugated geometry. • Employ a novel heat shrink fabrication approach compatible with low-cost processing. • Use thermal impedance modeling to explore design potential. • Corrugated design shown to be advantageous for low heat-flux density applications. - Abstract: A thin film thermoelectric (TE) generator with a corrugated architecture is demonstrated formed using a heat-shrink fabrication approach. Fabrication of the corrugated TE structure consists of depositing thin film thermoelectric elements onto a planar non-shrink polyimide substrate that is then sandwiched between two uniaxial stretch-oriented co-polyester (PET) films. The heat shrink PET films are adhered to the polyimide in select locations, such that when the structure is placed in a high temperature environment, the outer films shrink resulting in a corrugated core film and thermoelectric elements spanning between the outer PET films. The module has a cross-plane heat transfer architecture similar to a conventional bulk TE module, but with heat transfer in the plane of the thin film thermoelectric elements, which assists in maintaining a significant temperature difference across the thermoelectric junctions. In this demonstration, Ag and Ni films are used as the thermoelectric elements and a Seebeck coefficient of 14 μV K −1 is measured with a maximum power output of 0.22 nW per couple at a temperature difference of 7.0 K. We then theoretically consider the performance of this device architecture with high performance thermoelectric materials in the heat sink limited regime. The results show that the heat-shrink approach is a simple fabrication method that may be advantageous in large-area, low power density applications. The fabrication method is also compatible with simple geometric modification to achieve various form factors and power densities to customize the TE generator for a range of applications

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

Science.gov (United States)

Upadhyay, J.; Palczewski, A.; Popović, S.; Valente-Feliciano, A.-M.; Im, Do; Phillips, H. L.; Vušković, L.

2017-12-01

An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity's inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

Directory of Open Access Journals (Sweden)

J. Upadhyay

2017-12-01

Full Text Available An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

Shear Behavior of Corrugated Steel Webs in H Shape Bridge Girders

Directory of Open Access Journals (Sweden)

Qi Cao

2015-01-01

Full Text Available In bridge engineering, girders with corrugated steel webs have shown good mechanical properties. With the promotion of composite bridge with corrugated steel webs, in particular steel-concrete composite girder bridge with corrugated steel webs, it is necessary to study the shear performance and buckling of the corrugated webs. In this research, by conducting experiment incorporated with finite element analysis, the stability of H shape beam welded with corrugated webs was tested and three failure modes were observed. Structural data including load-deflection, load-strain, and shear capacity of tested beam specimens were collected and compared with FEM analytical results by ANSYS software. The effects of web thickness, corrugation, and stiffening on shear capacity of corrugated webs were further discussed.

Optical properties of nonimaging concentrators with corrugated reflectors

Science.gov (United States)

Roennelid, Mats; Perers, Bengt; Karlsson, Bjorn

1994-09-01

A ray tracing study has been performed on the optical properties of cylindrical nonimaging concentrators with linear corrugated reflectors. The corrugations are assumed to be V-formed and to have an extension parallel to the meridian plane of the concentrators. It is shown that the acceptance angle for radiation incident in the meridian plane can be increased for moderate corrugations. This increased acceptance is balanced by a decreased acceptance of radiation from other directions. Calculations of angular acceptance for a 2X compound parabolic concentrator is presented. It is shown that the annual irradiation on a solar collector with booster reflector can be increased if corrugated reflectors are used instead of smooth reflectors.

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

International Nuclear Information System (INIS)

Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

2007-01-01

The dependence of Si 3 N 4 etch rates and the etch selectivity of SiO 2 to Si 3 N 4 on ion-incident angles was studied for different bias voltages in a high-density C 4 F 8 plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si 3 N 4 etching, but it increased with the bias voltage in SiO 2 etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si 3 N 4 etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO 2 than for Si 3 N 4 and, consequently, the etch selectivity of SiO 2 to Si 3 N 4 decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO 2 had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF x ) film formed on the substrates

Flexural strengthening of Reinforced Concrete (RC) Beams Retrofitted with Corrugated Glass Fiber Reinforced Polymer (GFRP) Laminates

Science.gov (United States)

Aravind, N.; Samanta, Amiya K.; Roy, Dilip Kr. Singha; Thanikal, Joseph V.

2015-01-01

Strengthening the structural members of old buildings using advanced materials is a contemporary research in the field of repairs and rehabilitation. Many researchers used plain Glass Fiber Reinforced Polymer (GFRP) sheets for strengthening Reinforced Concrete (RC) beams. In this research work, rectangular corrugated GFRP laminates were used for strengthening RC beams to achieve higher flexural strength and load carrying capacity. Type and dimensions of corrugated profile were selected based on preliminary study using ANSYS software. A total of twenty one beams were tested to study the load carrying capacity of control specimens and beams strengthened with plain sheets and corrugated laminates using epoxy resin. This paper presents the experimental and theoretical study on flexural strengthening of Reinforced Concrete (RC) beams using corrugated GFRP laminates and the results are compared. Mathematical models were developed based on the experimental data and then the models were validated.

Flow induced pulsations caused by corrugated tubes

NARCIS (Netherlands)

Shatto, D.P.; Belfroid, S.P.C.; Peters, M.C.A.M.

2007-01-01

Corrugated tubes can produce a tonal noise when used for gas transport, for instance in the case of flexible risers. The whistling sound is generated by shear layer instability due to the boundary layer separation at each corrugation. This whistling is examined by investigating the frequency,

Flow induced pulsations generated in corrugated tubes

NARCIS (Netherlands)

Belfroid, S.P.C.; Swindell, R.; Tummers, R.

2008-01-01

Corrugated tubes can produce a tonal noise when used for gas transport, for instance in the case of flexible risers. The whistling sound is generated by shear layer instability due to the boundary layer separation at each corrugation. This whistling is examined by investigating the frequency,

Radiant absorption characteristics of corrugated curved tubes

Directory of Open Access Journals (Sweden)

Đorđević Milan Lj.

2017-01-01

Full Text Available The utilization of modern paraboloidal concentrators for conversion of solar radiation into heat energy requires the development and implementation of compact and efficient heat absorbers. Accurate estimation of geometry influence on absorption characteristics of receiver tubes is an important step in this process. This paper deals with absorption characteristics of heat absorber made of spirally coiled tubes with transverse circular corrugations. Detailed 3-D surface-to-surface Hemicube method was applied to compare radiation performances of corrugated and smooth curved tubes. The numerical results were obtained by varying the tube curvature ratio and incident radiant heat flux intensity. The details of absorption efficiency of corrugated tubes and the effect of curvature on absorption properties for both corrugated and smooth tubes were presented. The results may have significance to further analysis of highly efficient heat absorbers exposed to concentrated radiant heating. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 42006

Mass transfer in corrugated-plate membrane modules. I. Hyperfiltration experiments

NARCIS (Netherlands)

van der Waal, M.J.; Racz, I.G.

1989-01-01

The application of corrugations as turbulence promoters in membrane filtration was studied. This study showed that it is possible to deform an originally flat membrane to a corrugated shape without damaging it. In hyperfiltration experiments using corrugated cellulose acetate membranes it was found

Nonlinear finite element modeling of corrugated board

Science.gov (United States)

A. C. Gilchrist; J. C. Suhling; T. J. Urbanik

1999-01-01

In this research, an investigation on the mechanical behavior of corrugated board has been performed using finite element analysis. Numerical finite element models for corrugated board geometries have been created and executed. Both geometric (large deformation) and material nonlinearities were included in the models. The analyses were performed using the commercial...

Corrugated Membrane Nonlinear Deformation Process Calculation

OpenAIRE

A. S. Nikolaeva; S. A. Podkopaev

2015-01-01

Elastic elements are widely used in instrumentation. They are used to create a particular interference between the parts, for accumulating mechanical energy, as the motion transmission elements, elastic supports, and sensing elements of measuring devices. Device reliability and quality depend on the calculation accuracy of the elastic elements. A corrugated membrane is rather common embodiment of the elastic element.The corrugated membrane properties depend largely on its profile i.e. a gener...

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

Energy Technology Data Exchange (ETDEWEB)

Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

2017-02-24

The etch rates of NH₄OH:H₂O₂ and C₆H₈O₇:H₂O₂ for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH₄OH:H₂O₂ solution has a greater etch rate differential for the GaSb/GaAs material system than C₆H₈O₇:H₂O₂ solution. The selectivity of NH₄OH:H₂O₂ for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C₆H₈O₇:H₂O₂ has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

Assessment of rail long-pitch corrugation

Science.gov (United States)

Valehrach, Jan; Guziur, Petr; Riha, Tomas; Plasek, Otto

2017-09-01

The paper focuses on defects of the running surface of the rail, namely the rail corrugation defect and specifically long-pitch corrugation in curves of small radii. These defects cause a shorter life of the rails, greater maintenance costs and increase the noise and vibration pollution. Therefore, it is very important to understand the formation and development of the imperfection of the rails. In the paper, various sections of railway tracks in the Czech Republic are listed, each of them completed with comparison of defect development, the particular track superstructure, rolling stock, axle load, traffic load etc. Based on performed measurements, defect development has been proved as different on sections with similar (or even same) parameters. The paper assumes that a train velocity is the significant circumstance for defect development rates. Assessment of track section with under sleeper pads, which are expected to be the one of the possible ways to suppress the corrugation defect development, is included in evaluation.

Theoretical prediction on corrugated sandwich panels under bending loads

Science.gov (United States)

Shu, Chengfu; Hou, Shujuan

2018-05-01

In this paper, an aluminum corrugated sandwich panel with triangular core under bending loads was investigated. Firstly, the equivalent material parameters of the triangular corrugated core layer, which could be considered as an orthotropic panel, were obtained by using Castigliano's theorem and equivalent homogeneous model. Secondly, contributions of the corrugated core layer and two face panels were both considered to compute the equivalent material parameters of the whole structure through the classical lamination theory, and these equivalent material parameters were compared with finite element analysis solutions. Then, based on the Mindlin orthotropic plate theory, this study obtain the closed-form solutions of the displacement for a corrugated sandwich panel under bending loads in specified boundary conditions, and parameters study and comparison by the finite element method were executed simultaneously.

CONTRIBUTIONS ON THE DESIGN OF UNCONVENTIONAL CORRUGATED BOARD STRUCTURES

Directory of Open Access Journals (Sweden)

NEIDONI Nadina

2015-06-01

Full Text Available The paper depicts a few contributions on the design of several unconventional corrugated board structures. In general, cardboard and corrugated cardboard is strongly linked to packaging. However, limiting these materials to their primary use does nothing else but to restrict the possibilities of using them in other interesting areas. Consequently, new structures built from cardboard have been imagined and in the paper there are presented a few unconventional uses of the corrugated fiberboard, namely as furniture elements, along with the technology used in the design and the manufacturing process.

Etching in microsystem technology

CERN Document Server

Kohler, Michael

2008-01-01

Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

Nanoporous polymeric nanofibers based on selectively etched PS-b-PDMS block copolymers.

Science.gov (United States)

Demirel, Gokcen B; Buyukserin, Fatih; Morris, Michael A; Demirel, Gokhan

2012-01-01

One-dimensional nanoporous polymeric nanofibers have been fabricated within an anodic aluminum oxide (AAO) membrane by a facile approach based on selective etching of poly(dimethylsiloxane) (PDMS) domains in polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) block copolymers that had been formed within the AAO template. It was observed that prior to etching, the well-ordered PS-b-PDMS nanofibers are solid and do not have any porosity. The postetched PS nanofibers, on the other hand, had a highly porous structure having about 20-50 nm pore size. The nanoporous polymeric fibers were also employed as a drug carrier for the native, continuous, and pulsatile drug release using Rhodamine B (RB) as a model drug. These studies showed that enhanced drug release and tunable drug dosage can be achieved by using ultrasound irradiation. © 2011 American Chemical Society

Plasma etching: Yesterday, today, and tomorrow

Energy Technology Data Exchange (ETDEWEB)

Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

2013-09-15

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

Plasma etching: Yesterday, today, and tomorrow

International Nuclear Information System (INIS)

Donnelly, Vincent M.; Kornblit, Avinoam

2013-01-01

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

Numerical and Experimental Investigations on Mechanical Behavior of Composite Corrugated Core

Science.gov (United States)

Dayyani, Iman; Ziaei-Rad, Saeed; Salehi, Hamid

2012-06-01

Tensile and flexural characteristics of corrugated laminate panels were studied using numerical and analytical methods and compared with experimental data. Prepreg laminates of glass fiber plain woven cloth were hand-laid by use of a heat gun to ease the creation of the panel. The corrugated panels were then manufactured by using a trapezoidal machined aluminium mould. First, a series of simple tension tests were performed on standard samples to evaluate the material characteristics. Next, the corrugated panels were subjected to tensile and three-point bending tests. The force-displacement graphs were recorded. Numerical and analytical solutions were proposed to simulate the mechanical behavior of the panels. In order to model the energy dissipation due to delamination phenomenon observed in tensile tests in all members of corrugated core, plastic behavior was assigned to the whole geometry, not only to the corner regions. Contrary to the literature, it is shown that the three-stage mechanical behavior of composite corrugated core is not confined to aramid reinforced corrugated laminates and can be observed in other types such as fiber glass. The results reveal that the mechanical behavior of the core in tension is sensitive to the variation of core height. In addition, for the first time, the behavior of composite corrugated core was studied and verified in bending. Finally, the analytical and numerical results were validated by comparing them with experimental data. A good degree of correlation was observed which showed the suitability of the finite element model for predicting the mechanical behavior of corrugated laminate panels.

Preparation of fluorescent mesoporous hollow silica-fullerene nanoparticles via selective etching for combined chemotherapy and photodynamic therapy

Science.gov (United States)

Yang, Yannan; Yu, Meihua; Song, Hao; Wang, Yue; Yu, Chengzhong

2015-07-01

Well-dispersed mesoporous hollow silica-fullerene nanoparticles with particle sizes of ~50 nm have been successfully prepared by incorporating fullerene molecules into the silica framework followed by a selective etching method. The fabricated fluorescent silica-fullerene composite with high porosity demonstrates excellent performance in combined chemo/photodynamic therapy.Well-dispersed mesoporous hollow silica-fullerene nanoparticles with particle sizes of ~50 nm have been successfully prepared by incorporating fullerene molecules into the silica framework followed by a selective etching method. The fabricated fluorescent silica-fullerene composite with high porosity demonstrates excellent performance in combined chemo/photodynamic therapy. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02769a

Flow around a corrugated wing over the range of dragonfly flight

Science.gov (United States)

Padinjattayil, Sooraj; Agrawal, Amit

2017-11-01

The dragonfly flight is very much affected by the corrugations on their wings. A PIV based study is conducted on a rigid corrugated wing for a range of Reynolds number 300-12000 and three different angles of attack (5°-15°) to understand the mechanism of dragonfly flight better. The study revealed that the shape of the corrugation plays a key role in generating vortices. The vortices trapped in the valleys of corrugation dictates the shape of a virtual airfoil around the corrugated wing. A fluid roller bearing effect is created over the virtual airfoil when the trapped vortices merge with each other. A travelling wave produced by the moving virtual boundary around the fluid roller bearings avoids the formation of boundary layer on the virtual surface, thereby leading to high aerodynamic performance. It is found that the lift coefficient increases as the number of vortices increases on the suction surface. Also, it is shown that the partially merged co- rotating vortices give higher lift as compared to fully merged vortices. Further, the virtual airfoil formed around the corrugated wing is compared with a superhydrophobic airfoil which exhibits slip on its surface; several similarities in their flow characteristics are observed. The corrugated airfoil performs superior to the superhydrophobic airfoil in the aerodynamic efficiency due to the virtual slip caused by the travelling wave.

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1980-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1979-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

Energy Technology Data Exchange (ETDEWEB)

Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

2008-01-09

A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

International Nuclear Information System (INIS)

Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

2008-01-01

Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

Selective SiO2 etching in three dimensional structures using parylene-C as mask

NARCIS (Netherlands)

Veltkamp, Henk-Willem; Zhao, Yiyuan; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad

2017-01-01

This abstract describes an application of an easy and straightforward method for selective SiO2 etching in three dimensional structures, which is developed by our group. The application in this abstract is the protection of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against

On the whistling of corrugated pipes with narrow cavities

NARCIS (Netherlands)

Golliard, J.; Belfroid, S.P.C.; González Diez, N.; Bendiksen, E.; Frimodt, C.

2013-01-01

Pipes with a corrugated inner surface, as used inflexible pipes for gas production and transport, can be subject to Flow-Induced Pulsations when the flow velocities are higher than a certain onset velocity. The onset velocity for classical corrugated pipes can be predicted on basis of the geometry

Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE

DEFF Research Database (Denmark)

Kuznetsova, Nadezda; Kulkova, Irina; Semenova, Elizaveta

2014-01-01

Selective area etching and growth in the metalorganic vapor phase epitaxy (MOVPE) reactor on nano-scale structures have been examined. Using different mask orientations, crystallographic dependent etching of InP can be observed when carbon tetrabromide (CBr4) is used as an etchant. Scanning...

Fracture Behaviours in Compression-loaded Triangular Corrugated Core Sandwich Panels

Directory of Open Access Journals (Sweden)

Zaid N.Z.M.

2016-01-01

Full Text Available The failure modes occurring in sandwich panels based on the corrugations of aluminium alloy, carbon fibre-reinforced plastic (CFRP and glass fibre-reinforced plastic (GFRP are analysed in this work. The fracture behaviour of these sandwich panels under compressive stresses is determined through a series of uniform lateral compression performed on samples with different cell wall thicknesses. Compression test on the corrugated-core sandwich panels were conducted using an Instron series 4505 testing machine. The post-failure examinations of the corrugated-core in different cell wall thickness were conducted using optical microscope. Load-displacement graphs of aluminium alloy, GFRP and CFRP specimens were plotted to show progressive damage development with five unit cells. Four modes of failure were described in the results: buckling, hinges, delamination and debonding. Each of these failure modes may dominate under different cell wall thickness or loading condition, and they may act in combination. The results indicate that thicker composites corrugated-core panels tend can recover more stress and retain more stiffness. This analysis provides a valuable insight into the mechanical behaviour of corrugated-core sandwich panels for use in lightweight engineering applications.

Numerical investigation of the aerodynamic and structural characteristics of a corrugated wing

Science.gov (United States)

Hord, Kyle

Previous experimental studies on static, bio-inspired corrugated wings have shown that they produce favorable aerodynamic properties such as delayed stall compared to streamlined wings and flat plates at high Reynolds numbers (Re ≥ 4x104). The majority of studies have been carried out with scaled models of dragonfly forewings from the Aeshna Cyanea in either wind tunnels or water channels. In this thesis, the aerodynamics of a corrugated airfoil was studied using computational fluid dynamics methods at a low Reynolds number of 1000. Structural analysis was also performed using the commercial software SolidWorks 2009. The flow field is described by solving the incompressible Navier-Stokes equations on an overlapping grid using the pressure-Poisson method. The equations are discretized in space with second-order accurate central differences. Time integration is achieved through the second-order Crank-Nicolson implicit method. The complex vortex structures that form in the corrugated airfoil valleys and around the corrugated airfoil are studied in detail. Comparisons are made with experimental measurements from corrugated wings and also with simulations of a flat plate. Contrary to the studies at high Reynolds numbers, our study shows that at low Reynolds numbers the wing corrugation does not provide any aerodynamic benefit compared to a smoothed flat plate. Instead, the corrugated profile generates more pressure drag which is only partially offset by the reduction of friction drag, leading to more total drag than the flat plate. Structural analysis shows that the wing corrugation can increase the resistance to bending moments on the wing structure. A smoothed structure has to be three times thicker to provide the same stiffness. It was concluded the corrugated wing has the structural benefit to provide the same resistance to bending moments with a much reduced weight.

Design and manufacturing of skins based on composite corrugated laminates for morphing aerodynamic surfaces

Science.gov (United States)

Airoldi, Alessandro; Fournier, Stephane; Borlandelli, Elena; Bettini, Paolo; Sala, Giuseppe

2017-04-01

The paper discusses the approaches for the design and manufacturing of morphing skins based on rectangular-shaped composite corrugated laminates and proposes a novel solution to prevent detrimental effects of corrugation on aerodynamic performances. Additionally, more complex corrugated shapes are presented and analysed. The manufacturing issues related to the production of corrugated laminates are discussed and tests are performed to compare different solutions and to assess the validity of analytical and numerical predictions. The solution presented to develop an aerodynamically efficient skin consists in the integration of an elastomeric cover in the corrugated laminate. The related manufacturing process is presented and assessed, and a fully nonlinear numerical model is developed and characterized to study the behaviour of this skin concept in different load conditions. Finally, configurations based on combinations of individual rectangular-shaped corrugated panels are considered. Their structural properties are numerically investigated by varying geometrical parameters. Performance indices are defined to compare structural stiffness contributions in non-morphing directions with the ones of conventional panels of the same weight. Numerical studies also show that the extension of the concept to complex corrugated shapes may improve both the design flexibility and some specific performances with respect to rectangular shaped corrugations. The overall results validate the design approaches and manufacturing processes to produce corrugated laminates and indicate that the solution for the integration of an elastomeric cover is a feasible and promising method to enhance the aerodynamic efficiency of corrugated skins.

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Science.gov (United States)

Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

2018-06-01

The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

Mass transfer in corrugated-plate membrane modules. II. Ultrafiltration experiments

NARCIS (Netherlands)

van der Waal, M.J.; Stevanovic, S.; Racz, I.G.

1989-01-01

The application of corrugations as turbulence promoters in membrane filtration was studied. In ultrafiltration experiments with polysulfone membranes using Dextran T70 as solute, it was found that the corrugations result in reduced energy consumption or pressure drop compared with flat membranes at

Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

International Nuclear Information System (INIS)

Green, R T; Luxmoore, I J; Houston, P A; Ranalli, F; Wang, T; Parbrook, P J; Uren, M J; Wallis, D J; Martin, T

2009-01-01

A SiCl 4 /SF 6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl 2 /Ar/O 2 -based plasma chemistry. Devices etched using the SiCl 4 /SF 6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl 4 /SF 6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs

Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2/H2 plasmas

International Nuclear Information System (INIS)

Kim, J. S.; Kwon, B. S.; Heo, W.; Jung, C. R.; Park, J. S.; Shon, J. W.; Lee, N.-E.

2010-01-01

A multilevel resist (MLR) structure can be fabricated based on a very thin amorphous carbon (a-C) layer ( congruent with 80 nm) and Si 3 N 4 hard-mask layer ( congruent with 300 nm). The authors investigated the selective etching of the Si 3 N 4 layer using a physical-vapor-deposited (PVD) a-C mask in a dual-frequency superimposed capacitively coupled plasma etcher by varying the process parameters in the CH 2 F 2 /H 2 /Ar plasmas, viz., the etch gas flow ratio, high-frequency source power (P HF ), and low-frequency source power (P LF ). They found that under certain etch conditions they obtain infinitely high etch selectivities of the Si 3 N 4 layers to the PVD a-C on both the blanket and patterned wafers. The etch gas flow ratio played a critical role in determining the process window for infinitely high Si 3 N 4 /PVD a-C etch selectivity because of the change in the degree of polymerization. The etch results of a patterned ArF photoresisit/bottom antireflective coating/SiO x /PVD a-C/Si 3 N 4 MLR structure supported the idea of using a very thin PVD a-C layer as an etch-mask layer for the Si 3 N 4 hard-mask pattern with a pattern width of congruent with 80 nm and high aspect ratio of congruent with 5.

Dynamic tension testing equipment for paperboard and corrugated fiberboard

Science.gov (United States)

W. D. Godshall

1965-01-01

The objective of this work was to develop a method, the testing equipment, and the instrumentation with which dynamic stress-strain information may be obtained for paperboards and built-up corrugated fiberboards as used in corrugated fiberboard containers. Much information is available on the properties of these materials when subjected to static or low rates of...

UV-assisted selective chemical etching of relief gratings in Er/Yb-codoped IOG1 phosphate glass

Energy Technology Data Exchange (ETDEWEB)

Pappas, C; Pissadakis, S [Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Vasilika Vouton, PO Box 1527, Heraklion 71 110, GREECE (Greece)

2007-04-15

The patterning of sub-micron periodicity Bragg reflectors in Er/Yb-codoped IOG1, phosphate glass is demonstrated. A high yield patterning technique is presented, wherein high volume damage is induced into the glass matrix by exposure to intense UV radiation, and subsequently a chemical development in a strong acid selectively etches the exposed areas. The grating reflectors were fabricated by employing an elliptical Talbot interferometer and the output of a 213nm, 150ps frequency quintupled Nd:YAG laser. The grating depth of the etched relief pattern in time was measured at fixed time intervals and the dependence is presented in upon the etching time and exposure conditions. The gratings fabricated are examined by atomic and scanning electron microscopy for revealing the topology of the relief structure. Gratings with period of the order of 500nm were fabricated, having a maximum depth of 60nm.

Atom chips in the real world: the effects of wire corrugation

Science.gov (United States)

Schumm, T.; Estève, J.; Figl, C.; Trebbia, J.-B.; Aussibal, C.; Nguyen, H.; Mailly, D.; Bouchoule, I.; Westbrook, C. I.; Aspect, A.

2005-02-01

We present a detailed model describing the effects of wire corrugation on the trapping potential experienced by a cloud of atoms above a current carrying micro wire. We calculate the distortion of the current distribution due to corrugation and then derive the corresponding roughness in the magnetic field above the wire. Scaling laws are derived for the roughness as a function of height above a ribbon shaped wire. We also present experimental data on micro wire traps using cold atoms which complement some previously published measurements [CITE] and which demonstrate that wire corrugation can satisfactorily explain our observations of atom cloud fragmentation above electroplated gold wires. Finally, we present measurements of the corrugation of new wires fabricated by electron beam lithography and evaporation of gold. These wires appear to be substantially smoother than electroplated wires.

Transfer of hydrogen and helium through corrugated, flexible tubes

International Nuclear Information System (INIS)

Schippl, K.

2001-01-01

The transfer of liquid gas or cold gas through corrugated tubes is an alternative to rigid systems for the use in reactor technique. Advantages: flexibility for easy installation; these tubes together with their associated terminations and hardware are assembled, leak-tested and evacuated at the factory. This permits simple and cost saving installation on site. All tubes are helium leak-tested with a sensitivity of 10E -9 mbar 1/sec. Following the leak test, the vacuum space is pumped down to the operation vacuum level and properly sealed. The vacuum integrity is guaranteed as a result of the high degree of cleanliness observed during production and from the use of a specially selected better material inside the vacuum space. Disadvantage: pressure is limited to 20 bar. To fulfil all rules of the reactor safety, different tests have to be done. Because of the longitudinal weld of the corrugated tube, a bursting test of different sizes gives the best information of the liability of this kind of tube. It can be shown that the bursting pressure of such a tube is more than 5 times higher than the max. working pressure

Selective Etching via Soft Lithography of Conductive Multilayered Gold Films with Analysis of Electrolyte Solutions

Science.gov (United States)

Gerber, Ralph W.; Oliver-Hoyo, Maria T.

2008-01-01

This experiment is designed to expose undergraduate students to the process of selective etching by using soft lithography and the resulting electrical properties of multilayered films fabricated via self-assembly of gold nanoparticles. Students fabricate a conductive film of gold on glass, apply a patterned resist using a polydimethylsiloxane…

Dry etching technologies for reflective multilayer

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Comparative study of resist stabilization techniques for metal etch processing

Science.gov (United States)

Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

1999-06-01

This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

Energy Technology Data Exchange (ETDEWEB)

Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

2008-10-01

Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

Influence of presence of inclined centered baffle and corrugation frequency on natural convection heat transfer flow of air inside a square enclosure with corrugated side walls

Energy Technology Data Exchange (ETDEWEB)

Hussain, Salam Hadi; Jabbar, Mohammed Yousif; Mohamad, Ahmad Saddy [Mechanical Engineering Department, College of Engineering, Babylon University, Babylon Province (Iraq)

2011-09-15

The main objective of this study is to investigate the effect of presence of insulated inclined centered baffle and corrugation frequency on the steady natural convection in a sinusoidal corrugated enclosure. The present study is based on such a configuration where the two vertical sinusoidal walls are maintained at constant low temperature whereas a constant heat flux source whose length is 80% of the width of the enclosure is discretely embedded in the bottom wall. The remaining parts of the bottom wall and the top wall are adiabatic. The finite volume method has been used to solve the governing Navier-Stokes and the energy conservation equations of the fluid medium in the enclosure in order to investigate the effects of baffle inclination angles, corrugation frequencies and Grashof numbers on the fluid flow and heat transfer in the enclosure. The values of the governing parameters are the Grashof number Gr (10{sup 3}-10{sup 6}), the corrugation frequencies CF (1, 2 and 3), baffle inclination angles (0 deg. {<=} {phi} {<=} 150 deg.) and Prandtl number Pr (0.71). Results are presented in the form of streamline and isotherm plots. The results of this investigation are illustrated that the average Nusselt number increases with increase in both the Grashof number and corrugation frequency for different baffle inclination angles and the presence of inclined baffle and increasing the corrugation frequency have significant effects on the average Nusselt numbers, streamlines and isotherms inside the enclosure. The obtained numerical results have been compared with literature ones, and it gives a reliable agreement. (authors)

Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

International Nuclear Information System (INIS)

Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

2001-01-01

To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

Role of Bénard-Marangoni instabilities during solvent evaporation in polymer surface corrugations.

Science.gov (United States)

Bassou, N; Rharbi, Y

2009-01-06

Film formation through the drying of polymer solutions is a widely used process in laboratories and in many industrial applications such as coatings. One of the main goals of these applications is to control the film surface morphology. In many cases, evaporation has been found to yield corrugated patterns on the free surface of films. This has been interpreted in terms of either mechanical or hydrodynamic instabilities. In this article, we present experimental results where mesoscale 2D well-ordered surface corrugation patterns are formed during solvent evaporation from polystyrene/toluene solutions. The transformation of Benard-Marangoni instabilities into surface corrugation is studied during the entire drying process using particle tracking, 3D morphology analyses, etc. We show that the corrugation wavelength is controlled by the Benard-Marangoni instability, whereas the corrugation amplitude is controlled by a mechanism that involves a high evaporation rate.

Dry etch challenges for CD shrinkage in memory process

Science.gov (United States)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Dry etching of thin chalcogenide films

Energy Technology Data Exchange (ETDEWEB)

Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

2010-04-01

Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

Stylus type MEMS texture sensor covered with corrugated diaphragm

Science.gov (United States)

Tsukamoto, Takashiro; Asao, Hideaki; Tanaka, Shuji

2017-09-01

In this paper, a stylus type MEMS texture sensor covered with a corrugated palylene diaphragm, which prevent debris from jamming into the sensor without significant degradation of sensitivity and bandwidth, was reported. A new fabrication process using a lost-foil method to make the corrugated diaphragm on a 3-axis piezoresistive force sensor at wafer level has been developed. The texture sensor could detect the surface microstructure as small as about 10 \

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

Science.gov (United States)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

International Nuclear Information System (INIS)

Wang Chunyu; Donnelly, Vincent M.

2008-01-01

The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

Fabrication of micromechanical structures on substrates selectively etched using a micropatterned ion-implantation method

International Nuclear Information System (INIS)

Nakano, Shizuka; Nakagawa, Sachiko; Ishikawa, Haruo; Ogiso, Hisato

2001-01-01

An advanced micromachining technique using ion implantation to modify materials was studied. Gold ion implantation into silicon decreased the etching rate when the silicon was etched in potassium hydroxide solution after the ion implantation; the implanted region remained, thus forming the microstructure. Observation of the cross-section of the resulting etched structure by transmission electron microscopy showed that the structure was made only from the ion-implanted region, and that gold was precipitated on the surface. To clarify the mechanism involved in the decrease in the etching rate, we varied the etching conditions. Our results show that precipitation of implanted gold on the surface decreased the etching rate, because solubility of gold is lower

Fast rail corrugation detection based on texture filtering

Science.gov (United States)

Xiao, Jie; Lu, Kaixia

2018-02-01

The condition detection of rails in high-speed railway is one of the important means to ensure the safety of railway transportation. In order to replace the traditional manual inspection, save manpower and material resources, and improve the detection speed and accuracy, it is of great significance to develop a machine vision system for locating and identifying defects on rails automatically. Rail defects exhibit different properties and are divided into various categories related to the type and position of flaws on the rail. Several kinds of interrelated factors cause rail defects such as type of rail, construction conditions, and speed and/or frequency of trains using the rail. Rail corrugation is a particular kind of defects that produce an undulatory deformation on the rail heads. In high speed train, the corrugation induces harmful vibrations on wheels and its components and reduces the lifetime of rails. This type of defects should be detected to avoid rail fractures. In this paper, a novel method for fast rail corrugation detection based on texture filtering was proposed.

Numerical Investigation of the Fully-Developed Periodic Flow Field for Optimal Heat Transfer in Spirally Corrugated Tubes

DEFF Research Database (Denmark)

Hærvig, Jakob; Condra, Thomas Joseph; Sørensen, Kim

Even though the corrugated tube is a widely used technique to enhance transfer heat, the exact heat transfer enhancing mechanism remains relatively un-documented. Most studies attribute the favourable heat transfer characteristics to a swirling flow being present at higher corrugation....... In this study, a systematic approach relying on Computational Fluid Dynamics (CFD) is used to study and compare the heat transfer characteristics with the detailed flow field in the spirally corrugated tubes. By comparing the flow in 12 different spirally corrugated tubes at a fixed Reynolds number of 5000......, this study compares the flow field with the surface averaged Nusselt number to gain valuable insight into which flow phenomena causes favourable heat transfer characteristics. While the flow at low corrugations approximates the non-corrugated tube, higher corrugations of h/D creates a significant tangential...

Metal-assisted etch combined with regularizing etch

Energy Technology Data Exchange (ETDEWEB)

Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

2018-03-06

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

A corrugated perfect magnetic conductor surface supporting spoof surface magnon polaritons.

Science.gov (United States)

Liu, Liang-liang; Li, Zhuo; Gu, Chang-qing; Ning, Ping-ping; Xu, Bing-zheng; Niu, Zhen-yi; Zhao, Yong-jiu

2014-05-05

In this paper, we demonstrate that spoof surface magnon polaritons (SSMPs) can propagate along a corrugated perfect magnetic conductor (PMC) surface. From duality theorem, the existence of surface electromagnetic modes on corrugated PMC surfaces are manifest to be transverse electric (TE) mode compared with the transverse magnetic (TM) mode of spoof surface plasmon plaritons (SSPPs) excited on corrugated perfect electric conductor surfaces. Theoretical deduction through modal expansion method and simulation results clearly verify that SSMPs share the same dispersion relationship with the SSPPs. It is worth noting that this metamaterial will have more similar properties and potential applications as the SSPPs in large number of areas.

Constructive fire protection of steel corrugated beams of buildings and other structures

Directory of Open Access Journals (Sweden)

Ilyin Nikolay

2017-01-01

Full Text Available The research introduces a methodology of establishing indicators of fire safety of a building in relation to a guaranteed duration of steel fire-proof corrugated beams resistance in conditions of standard fire tests. Indicators of fire safety are also established in the assessment of design limits of steel fire-proof corrugated beams during design process, construction or maintenance of the building as well as in reducing economic costs when testing steel structures for fire resisting property. The suggested methodology introduces the system of actions aimed to design constructive fire protection of steel corrugated beams of buildings. Technological effect is achieved by conducting firing tests of steel construction by non-destructive methods; the evaluation of fire resistance of fire-proof elements of corrugated beams (corrugated web, upper and lower shelves is identified by the least fire-proof element of a welded I-beam. In this methodology fire resistance duration of the constituent elements of a welded I-beam with account of its fire protection ability is described with an analytic function taken as variables. These variables are intensity strength of stresses and the degree of fire protection of a compound element.

Heat transfer enhancement and pumping power optimization using CuO-water nanofluid through rectangular corrugated pipe

Science.gov (United States)

Salehin, Musfequs; Ehsan, Mohammad Monjurul; Islam, A. K. M. Sadrul

2017-06-01

Heat transfer enhancement by corrugation in fluid domain is a popular method. The rate of improvement is more when it is used highly thermal conductive fluid as heating or cooling medium. In this present study, heat transfer augmentation was investigated numerically by implementing corrugation in the fluid domain and nanofluid as the base fluid in the turbulent forced convection regime. Finite volume method (FVM) was applied to solve the continuity, momentum and energy equations. All the numerical simulations were considered for single phase flow. A rectangle corrugated pipe with 5000 W/m2 constant heat flux subjected to the corrugated wall was considered as the fluid domain. In the range of Reynolds number 15000 to 40000, thermo-physical and hydrodynamic behavior was investigated by using CuO-water nanofluid from 1% to 5% volume fraction as the base fluid through the corrugated fluid domain. Corrugation justification was performed by changing the amplitude of the corrugation and the corrugation wave length for obtaining the increased heat transfer rate with minimum pumping power. For using CuO-water nanofluid, augmentation was also found more in the rectangle corrugated pipe both in heat transfer and pumping power requirement with the increase of Reynolds number and the volume fraction of nanofluid. For the increased pumping power, optimization of pumping power by using nanofluid was also performed for economic finding.

Waste paper recycling opportunities for government action. Vol. 4, corrugated waste. Final report

Energy Technology Data Exchange (ETDEWEB)

Bailey, J.; Love, P.

1978-01-01

This study analyzes current and expected corrugated waste market conditions in Canada, with the objective of identifying government initiatives which could permanently increase recovery levels. Short-term, practical measures are featured. National and regional demand, generation and recovery levels are examined, along with imports and exports to the USA. Over 70% of corrugated waste is consumed in Ontario and Quebec, and most of this waste is generated in those two provinces. Average recovery rates in most major urban areas are estimated at 30-40%. Future demand, generation, and recovery are estimated, and it is suggested that there will be enough domestic demand to permit reclamation of nearly 35% of Canada's total corrugated wastes. This potential level is not expected to change significantly, and new demand opportunities appear minimal. Examination of the potential for future imports from the USA indicates that availability will tighten over the medium term, necessitating a search for new corrugated waste supply sources. Possible sources include supermakets, retail chains and large assembly manufacturing establishments; one of the most promising of these sources is shopping malls, and a study is appended which examines the feasibility of a corrugated waste source separation program within a hypothetical mall. Possible government actions are outlined to improve reclamation and recycling of corrugated waste in Canada, including the improvement of local recovery capabilities in British Columbia, Ontario and Quebec, and the reduction of freight costs for moving corrugated waste from low-recovery areas to high-demand areas. 26 refs., 9 figs., 31 tabs.

Numerical analysis of beam with sinusoidally corrugated webs

Science.gov (United States)

Górecki, Marcin; Pieńko, Michał; Łagoda, GraŻyna

2018-01-01

The paper presents numerical tests results of the steel beam with sinusoidally corrugated web, which were performed in the Autodesk Algor Simulation Professional 2010. The analysis was preceded by laboratory tests including the beam's work under the influence of the four point bending as well as the study of material characteristics. Significant web's thickness and use of tools available in the software allowed to analyze the behavior of the plate girder as beam, and also to observe the occurrence of stresses in the characteristic element - the corrugated web. The stress distribution observed on the both web's surfaces was analyzed.

Development of deep silicon plasma etching for 3D integration technology

Directory of Open Access Journals (Sweden)

Golishnikov А. А.

2014-02-01

Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

Modeling of block copolymer dry etching for directed self-assembly lithography

Science.gov (United States)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

Science.gov (United States)

Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

2000-07-01

In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

On the Fully-Developed Heat Transfer Enhancing Flow Field in Sinusoidally, Spirally Corrugated Tubes Using Computational Fluid Dynamics

DEFF Research Database (Denmark)

Hærvig, Jakob; Sørensen, Kim; Condra, Thomas Joseph

2017-01-01

A numerical study has been carried out to investigate heat transfer enhancing flow field in 28 geometrically different sinusoidally, spirally corrugated tubes. To vary the corrugation, the height of corrugation e/D and the length between two successive corrugated sections p/D are varied in the ra...

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

Science.gov (United States)

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

International Nuclear Information System (INIS)

Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

2014-01-01

Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

[Progressive damage monitoring of corrugated composite skins by the FBG spectral characteristics].

Science.gov (United States)

Zhang, Yong; Wang, Bang-Feng; Lu, Ji-Yun; Gu, Li-Li; Su, Yong-Gang

2014-03-01

In the present paper, a method of monitoring progressive damage of composite structures by non-uniform fiber Bragg grating (FBG) reflection spectrum is proposed. Due to the finite element analysis of corrugated composite skins specimens, the failure process under tensile load and corresponding critical failure loads of corrugated composite skin was predicated. Then, the non-uniform reflection spectrum of FBG sensor could be reconstructed and the corresponding relationship between layer failure order sequence of corrugated composite skin and FBG sensor reflection spectrums was acquired. A monitoring system based on FBG non-uniform reflection spectrum, which can be used to monitor progressive damage of corrugated composite skins, was built. The corrugated composite skins were stretched under this FBG non-uniform reflection spectrum monitoring system. The results indicate that real-time spectrums acquired by FBG non-uniform reflection spectrum monitoring system show the same trend with the reconstruction reflection spectrums. The maximum error between the corresponding failure and the predictive value is 8.6%, which proves the feasibility of using FBG sensor to monitor progressive damage of corrugated composite skin. In this method, the real-time changes in the FBG non-uniform reflection spectrum within the scope of failure were acquired through the way of monitoring and predicating, and at the same time, the progressive damage extent and layer failure sequence of corru- gated composite skin was estimated, and without destroying the structure of the specimen, the method is easy and simple to operate. The measurement and transmission section of the system are completely composed of optical fiber, which provides new ideas and experimental reference for the field of dynamic monitoring of smart skin.

Introducing etch kernels for efficient pattern sampling and etch bias prediction

Science.gov (United States)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2018-01-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Composition and conductance distributions of single GeSi quantum rings studied by conductive atomic force microscopy combined with selective chemical etching.

Science.gov (United States)

Lv, Y; Cui, J; Jiang, Z M; Yang, X J

2013-02-15

Atomic force microscopy imaging combined with selective chemical etching is employed to quantitatively investigate three-dimensional (3D) composition distributions of single GeSi quantum rings (QRs). In addition, the 3D quantitative composition distributions and the corresponding conductance distributions are simultaneously obtained on the same single GeSi QRs by conductive atomic force microscopy combined with selective chemical etching, allowing us to investigate the correlations between the conductance and composition distributions of single QRs. The results show that the QRs' central holes have higher Ge content, but exhibit lower conductance, indicating that the QRs' conductance distribution is not consistent with their composition distribution. By comparing the topography, composition and conductance profiles of the same single QRs before and after different etching processes, it is found that the conductance distributions of GeSi QRs do not vary with the change of composition distribution. Instead, the QRs' conductance distributions are found to be consistent with their topographic shapes, which can be supposed to be due to the shape determined electronic structures.

Ion-Exchange-Induced Selective Etching for the Synthesis of Amino-Functionalized Hollow Mesoporous Silica for Elevated-High-Temperature Fuel Cells.

Science.gov (United States)

Zhang, Jin; Liu, Jian; Lu, Shanfu; Zhu, Haijin; Aili, David; De Marco, Roland; Xiang, Yan; Forsyth, Maria; Li, Qingfeng; Jiang, San Ping

2017-09-20

As differentiated from conventional synthetic processes, amino-functionalized hollow mesoporous silica (NH 2 -HMS) has been synthesized using a new and facile strategy of ion-exchange-induced selective etching of amino-functionalized mesoporous silica (NH 2 -meso-silica) by an alkaline solution. Nuclear magnetic resonance (NMR) spectroscopy and in situ time-resolved small-angle X-ray scattering (SAXS) reveal that ion-exchange-induced selective etching arises from the gradient distribution of OH - in the NH 2 -meso-silica nanospheres. Moreover, the ion-exchange-induced selective etching mechanism is verified through a successful synthesis of hollow mesoporous silica. After infiltration with phosphotungstic acid (PWA), PWA-NH 2 -HMS nanoparticles are dispersed in the poly(ether sulfone)-polyvinylpyrrolidone (PES-PVP) matrix, forming a hybrid PWA-NH 2 -HMS/PES-PVP nanocomposite membrane. The resultant nanocomposite membrane with an optimum loading of 10 wt % of PWA-NH 2 -HMS showed an enhanced proton conductivity of 0.175 S cm -1 and peak power density of 420 mW cm -2 at 180 °C under anhydrous conditions. Excellent durability of the hybrid composite membrane fuel cell has been demonstrated at 200 °C. The results of this study demonstrated the potential of the facile synthetic strategy in the fabrication of NH 2 -HMS with controlled mesoporous structure for application in nanocomposite membranes as a technology platform for elevated-temperature proton exchange membrane fuel cells.

Ripple formation on Si surfaces during plasma etching in Cl2

Science.gov (United States)

Nakazaki, Nobuya; Matsumoto, Haruka; Sonobe, Soma; Hatsuse, Takumi; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2018-05-01

Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate surfaces. The sheath control plate consisted of an array of inclined trenches, being set into place on the rf-biased electrode, where their widths and depths were chosen in such a way that the sheath edge was pushed out of the trenches. The distortion of potential distributions and the consequent deflection of ion trajectories above and in the trenches were then analyzed based on electrostatic particle-in-cell simulations of the plasma sheath, to evaluate the angular distributions of ion fluxes incident on substrates pasted on sidewalls and/or at the bottom of the trenches. Experiments showed well-defined periodic sawtooth-like ripples with their wave vector oriented parallel to the direction of ion incidence at intermediate off-normal angles, while relatively weak corrugations or ripplelike structures with the wave vector perpendicular to it at high off-normal angles. Possible mechanisms for the formation of surface ripples during plasma etching are discussed with the help of Monte Carlo simulations of plasma-surface interactions and feature profile evolution. The results indicate the possibility of providing an alternative to ion beam sputtering for self-organized formation of ordered surface nanostructures.

Effect of varying geometrical parameters of trapezoidal corrugated-core sandwich structure

Directory of Open Access Journals (Sweden)

Zaid N.Z.M.

2017-01-01

Full Text Available Sandwich structure is an attractive alternative that increasingly used in the transportation and aerospace industry. Corrugated-core with trapezoidal shape allows enhancing the damage resistance to the sandwich structure, but on the other hand, it changes the structural response of the sandwich structure. The aim of this paper is to study the effect of varying geometrical parameters of trapezoidal corrugated-core sandwich structure under compression loading. The corrugated-core specimen was fabricated using press technique, following the shape of trapezoidal shape. Two different materials were used in the study, glass fibre reinforced plastic (GFRP and carbon fibre reinforced plastic (CFRP. The result shows that the mechanical properties of the core in compression loading are sensitive to the variation of a number of unit cells and the core thickness.

Theory of static friction: temperature and corrugation effects

International Nuclear Information System (INIS)

Franchini, A; Brigazzi, M; Santoro, G; Bortolani, V

2008-01-01

We present a study of the static friction, as a function of temperature, between two thick solid slabs. The upper one is formed of light particles and the substrate of heavy particles. We focus our attention on the interaction between the phonon fields of the two blocks and on the interface corrugation, among the various mechanisms responsible for the friction. To give evidence of the role played by the dynamical interaction of the substrate with the upper block, we consider both a substrate formed by fixed atoms and a substrate formed by mobile atoms. To study the effect of the corrugation, we model it by changing the range parameter σ in the Lennard-Jones interaction potential. We found that in the case of the mobile substrate there is a large momentum transfer from the substrate to the upper block. This momentum transfer increases on increasing the temperature and produces a large disorder in the upper block favouring a decrease of the static friction with respect to the case for a rigid substrate. Reducing the corrugation, we found that with a rigid substrate the upper block becomes nearly commensurate, producing an enhancement of the static friction with respect to that with a mobile substrate

Direct measurements of acoustic damping and sound amplification in corrugated pipes with flow

NARCIS (Netherlands)

Golliard, J.; Belfroid, S.P.C.; Vijlbrief, O.; Lunde, K.

2015-01-01

The flow-induced pulsations in corrugated pipes result from a feedback loop between an acoustic resonator and the noise amplification at each shear layer in the axisymmetric cavities forming the corrugations. The quality factor of the resonator is determined by the reflection coefficients at the

Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

Science.gov (United States)

Ozer, Fusun; Blatz, Markus B

2013-01-01

Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

Science.gov (United States)

Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

2016-06-01

A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Science.gov (United States)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Swimming behaviour and ascent paths of brook trout in a corrugated culvert

Science.gov (United States)

Goerig, Elsa; Bergeron, Normand E.; Castro-Santos, Theodore R.

2017-01-01

Culverts may restrict fish movements under some hydraulic conditions such as shallow flow depths or high velocities. Although swimming capacity imposes limits to passage performance, behaviour also plays an important role in the ability of fish to overcome velocity barriers. Corrugated metal culverts are characterized by unsteady flow and existence of low‐velocity zones, which can improve passage success. Here, we describe swimming behaviour and ascent paths of 148 wild brook trout in a 1.5‐m section of a corrugated metal culvert located in Raquette Stream, Québec, Canada. Five passage trials were conducted in mid‐August, corresponding to specific mean cross‐sectional flow velocities ranging from 0.30 to 0.63 m/s. Fish were individually introduced to the culvert and their movements recorded with a camera located above the water. Lateral and longitudinal positions were recorded at a rate of 3 Hz in order to identify ascent paths. These positions were related to the distribution of flow depths and velocities in the culvert. Brook trout selected flow velocities from 0.2 to 0.5 m/s during their ascents, which corresponded to the available flow velocities in the culvert at the low‐flow conditions. This however resulted in the use of low‐velocity zones at higher flows, mainly located along the walls of the culvert. Some fish also used the corrugations for sheltering, although the behaviour was marginal and did not occur at the highest flow condition. This study improves knowledge on fish behaviour during culvert ascents, which is an important aspect for developing reliable and accurate estimates of fish passage ability.

Axial Crushing Behaviors of Thin-Walled Corrugated and Circular Tubes - A Comparative Study

Science.gov (United States)

Reyaz-Ur-Rahim, Mohd.; Bharti, P. K.; Umer, Afaque

2017-10-01

With the help of finite element analysis, this research paper deals with the energy absorption and collapse behavior with different corrugated section geometries of hollow tubes made of aluminum alloy 6060-T4. Literature available experimental data were used to validate the numerical models of the structures investigated. Based on the results available for symmetric crushing of circular tubes, models were developed to investigate corrugated thin-walled structures behavior. To study the collapse mechanism and energy absorbing ability in axial compression, the simulation was carried in ABAQUS /EXPLICIT code. In the simulation part, specimens were prepared and axially crushed to one-fourth length of the tube and the energy diagram of crushing force versus axial displacement is shown. The effect of various parameters such as pitch, mean diameter, corrugation, amplitude, the thickness is demonstrated with the help of diagrams. The overall result shows that the corrugated section geometry could be a good alternative to the conventional tubes.

Numerical analysis of sandwich beam with corrugated core under three-point bending

Energy Technology Data Exchange (ETDEWEB)

Wittenbeck, Leszek [Poznan University of Technology, Institute of Mathematics Piotrowo Street No. 5, 60-965 Poznan (Poland); Grygorowicz, Magdalena; Paczos, Piotr [Poznan University of Technology, Institute of Applied Mechanics Jana Pawla IIStreet No. 24, 60-965 Poznan (Poland)

2015-03-10

The strength problem of sandwich beam with corrugated core under three-point bending is presented.The beam are made of steel and formed by three mutually orthogonal corrugated layers. The finite element analysis (FEA) of the sandwich beam is performed with the use of the FEM system - ABAQUS. The relationship between the applied load and deflection in three-point bending is considered.

Anisotropic etching of polycrystalline silicon with a hot Cl2 molecular beam

International Nuclear Information System (INIS)

Suzuki, K.; Hiraoka, S.; Nishimatsu, S.

1988-01-01

A hot Cl 2 molecular (Cl/sup */ 2 ) beam was successfully applied to achieve highly anisotropic, highly selective, and almost damage-free etching of polycrystalline Si. The anisotropy, the ratio of etch rates in vertical and horizontal directions, was larger than 25. The selectivity, the ratio of polycrystalline Si and SiO 2 etch rates, was larger than 1000. The Cl/sup */ 2 beam was produced by free jet expansion of a Cl 2 gas heated in a graphite furnace. The furnace temperature was 830 0 C. The substrate temperature was 180 0 C. The average total energy (0.38 eV) of a Cl/sup */ 2 molecule impinging on a substrate surface is much lower than the critical energy (approximately 10 eV) to displace the atoms of the etched material and to cause surface damage. This is the essential reason why this highly selective and almost damage-free etching has been achieved. The highly anisotropic etching mechanism is explained by a model taking into account the directional incidence of Cl/sup */ 2 molecules to the surface, and the deactivation process of the Cl/sup */ 2 molecules on a cold surface

Lamb wave band gaps in one-dimensional radial phononic crystal plates with periodic double-sided corrugations

Energy Technology Data Exchange (ETDEWEB)

Li, Yinggang [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); School of Transportation, Wuhan University of Technology, Wuhan 430070 (China); Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Li, Suobin [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China)

2015-11-01

In this paper, we present the theoretical investigation of Lamb wave propagation in one-dimensional radial phononic crystal (RPC) plates with periodic double-sided corrugations. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite element method based on two-dimensional axial symmetry models in cylindrical coordinates. Numerical results show that the proposed RPC plates with periodic double-sided corrugations can yield several band gaps with a variable bandwidth for Lamb waves. The formation mechanism of band gaps in the double-sided RPC plates is attributed to the coupling between the Lamb modes and the in-phase and out-phases resonant eigenmodes of the double-sided corrugations. We investigate the evolution of band gaps in the double-sided RPC plates with the corrugation heights on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Significantly, with the introduction of symmetric double-sided corrugations, the antisymmetric Lamb mode is suppressed by the in-phase resonant eigenmodes of the double-sided corrugations, resulting in the disappearance of the lowest band gap. Furthermore, the effects of the geometrical parameters on the band gaps are further explored numerically.

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

Science.gov (United States)

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

Etch bias inversion during EUV mask ARC etch

Science.gov (United States)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Evaluation of Steel Shear Walls Behavior with Sinusoidal and Trapezoidal Corrugated Plates

Directory of Open Access Journals (Sweden)

Emad Hosseinpour

2015-01-01

Full Text Available Reinforcement of structures aims to control the input energy of unnatural and natural forces. In the past four decades, steel shear walls are utilized in huge constructions in some seismic countries such as Japan, United States, and Canada to lessen the risk of destructive forces. The steel shear walls are divided into two types: unstiffened and stiffened. In the former, a series of plates (sinusoidal and trapezoidal corrugated with light thickness are used that have the postbuckling field property under overall buckling. In the latter, steel profile belt series are employed as stiffeners with different arrangement: horizontal, vertical, or diagonal in one side or both sides of wall. In the unstiffened walls, increasing the thickness causes an increase in the wall capacity under large forces in tall structures. In the stiffened walls, joining the stiffeners to the wall is costly and time consuming. The ANSYS software was used to analyze the different models of unstiffened one-story steel walls with sinusoidal and trapezoidal corrugated plates under lateral load. The obtained results demonstrated that, in the walls with the same dimensions, the trapezoidal corrugated plates showed higher ductility and ultimate bearing compared to the sinusoidal corrugated plates.

Plasma influence on the dispersion properties of finite-length, corrugated waveguides

OpenAIRE

Shkvarunets, A.; Kobayashi, S.; Weaver, J.; Carmel, Y.; Rodgers, J.; Antonsen, T.; Granatstein, V.L.; Destler, W.W.; Ogura, K.; Minami, K.

1996-01-01

We present an experimental study of the electromagnetic properties of transverse magnetic modes in a corrugated-wall cavity filled with a radially inhomogeneous plasma. The shifts of the .resonant frequencies of a finite-length, corrugated cavity were measured as a function of the background plasma density and the dispersion diagram was reconstructed up to a peak plasma density of 1012 em - 3. Good agreement with a calculated dispersion diagram is obtained for plasma densities below 5 X 1011 ...

Silicon Carbide Corrugated Mirrors for Space Telescopes, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Trex Enterprises Corporation (Trex) proposes technology development to manufacture monolithic, lightweight silicon carbide corrugated mirrors (SCCM) suitable for...

Optimization of some electrochemical etching parameters for cellulose derivatives

International Nuclear Information System (INIS)

Chowdhury, Annis; Gammage, R.B.

1978-01-01

Electrochemical etching of fast neutron induced recoil particle tracks in cellulose derivatives and other polymers provides an inexpensive and sensitive means of fast neutron personnel dosimetry. A study of the shape, clarity, and size of the tracks in Transilwrap polycarbonate indicated that the optimum normality of the potassium hydroxide etching solution is 9 N. Optimizations have also been attempted for cellulose nitrate, triacetate, and acetobutyrate with respect to such electrochemical etching parameters as frequency, voltage gradient, and concentration of the etching solution. The measurement of differential leakage currents between the undamaged and the neutron damaged foils aided in the selection of optimum frequencies. (author)

Advanced dry etching studies for micro- and nano-systems

DEFF Research Database (Denmark)

Rasmussen, Kristian Hagsted

and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

Pressure drop and stability of flow in Archimedean spiral tube with transverse corrugations

Directory of Open Access Journals (Sweden)

Đorđević Milan

2016-01-01

Full Text Available Isothermal pressure drop experiments were carried out for the steady Newtonian fluid flow in Archimedean spiral tube with transverse corrugations. Pressure drop correlations and stability criteria for distinguishing the flow regimes have been obtained in a continuous Reynolds number range from 150 to 15 000. The characterizing geometrical groups which take into account all the geometrical parameters of Archimedean spiral and corrugated pipe has been acquired. Before performing experiments over the Archimedean spiral, the corrugated straight pipe having high relative roughness e/d = 0.129 of approximately sinusoidal type was tested in order to obtain correlations for the Darcy friction factor. Insight into the magnitude of pressure loss in the proposed geometry of spiral solar receiver for different flow rates is important because of its effect upon the efficiency of the receiver. Although flow in spiral and corrugated geometries has the advantages of compactness and high heat transfer rates, the disadvantage of greater pressure drops makes hydrodynamic studies relevant. [Projekat Ministarstva nauke Republike Srbije, br. III 42006 i br. TR 33015

Design of Ultra-Wideband Tapered Slot Antenna by Using Binomial Transformer with Corrugation

Science.gov (United States)

Chareonsiri, Yosita; Thaiwirot, Wanwisa; Akkaraekthalin, Prayoot

2017-05-01

In this paper, the tapered slot antenna (TSA) with corrugation is proposed for UWB applications. The multi-section binomial transformer is used to design taper profile of the proposed TSA that does not involve using time consuming optimization. A step-by-step procedure for synthesis of the step impedance values related with step slot widths of taper profile is presented. The smooth taper can be achieved by fitting the smoothing curve to the entire step slot. The design of TSA based on this method yields results with a quite flat gain and wide impedance bandwidth covering UWB spectrum from 3.1 GHz to 10.6 GHz. To further improve the radiation characteristics, the corrugation is added on the both edges of the proposed TSA. The effects of different corrugation shapes on the improvement of antenna gain and front-to-back ratio (F-to-B ratio) are investigated. To demonstrate the validity of the design, the prototypes of TSA without and with corrugation are fabricated and measured. The results show good agreement between simulation and measurement.

Etching and oxidation of InAs in planar inductively coupled plasma

Energy Technology Data Exchange (ETDEWEB)

Dultsev, F.N., E-mail: fdultsev@thermo.isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation)

2009-10-15

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH{sub 4}/H{sub 2}/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Etching and oxidation of InAs in planar inductively coupled plasma

Science.gov (United States)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Etching and oxidation of InAs in planar inductively coupled plasma

International Nuclear Information System (INIS)

Dultsev, F.N.; Kesler, V.G.

2009-01-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4 /H 2 /Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

Energy Technology Data Exchange (ETDEWEB)

Li, Hu; Muraki, Yu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan)

2015-07-15

Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +} or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.

Atom chips in the real world: the effects of wire corrugation

OpenAIRE

Schumm , Thorsten; Estève , Jérôme; Aussibal , Christine; Figl , Cristina; Trebbia , Jean-Baptiste; Nguyen , Hai; Mailly , Dominique; Bouchoule , Isabelle; Westbrook , Christoph I; Aspect , Alain

2005-01-01

International audience; We present a detailed model describing the effects of wire corrugation on the trapping potential experienced by a cloud of atoms above a current carrying micro wire. We calculate the distortion of the current distribution due to corrugation and then derive the corresponding roughness in the magnetic field above the wire. Scaling laws are derived for the roughness as a function of height above a ribbon shaped wire. We also present experimental data on micro wire traps u...

Plasma influence on the dispersion properties of finite-length, corrugated waveguides

Science.gov (United States)

Shkvarunets, A.; Kobayashi, S.; Weaver, J.; Carmel, Y.; Rodgers, J.; Antonsen, T. M., Jr.; Granatstein, V. L.; Destler, W. W.; Ogura, K.; Minami, K.

1996-03-01

We present an experimental study of the electromagnetic properties of transverse magnetic modes in a corrugated-wall cavity filled with a radially inhomogeneous plasma. The shifts of the resonant frequencies of a finite-length, corrugated cavity were measured as a function of the background plasma density and the dispersion diagram was reconstructed up to a peak plasma density of 1012 cm-3. Good agreement with a calculated dispersion diagram is obtained for plasma densities below 5×1011 cm-3.

Quantifying the Sub-Cellular Distributions of Gold Nanospheres Uptaken by Cells through Stepwise, Site-Selective Etching.

Science.gov (United States)

Xia, Younan; Huo, Da

2018-04-10

A quantitative understanding of the sub-cellular distributions of nanoparticles uptaken by cells is important to the development of nanomedicine. With Au nanospheres as a model system, here we demonstrate, for the first time, how to quantify the numbers of nanoparticles bound to plasma membrane, accumulated in cytosol, and entrapped in lysosomes, respectively, through stepwise, site-selective etching. Our results indicate that the chance for nanoparticles to escape from lysosomes is insensitive to the presence of targeting ligand although ligand-receptor binding has been documented as a critical factor in triggering internalization. Furthermore, the presence of serum proteins is shown to facilitate the binding of nanoparticles to plasma membrane lacking the specific receptor. Collectively, these findings confirm the potential of stepwise etching in quantitatively analyzing the sub-cellular distributions of nanoparticles uptaken by cells in an effort to optimize the therapeutic effect. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

The chemical and electrochemical anisotropic etching of silicon

International Nuclear Information System (INIS)

Dixon, E.

1997-06-01

The success of silicon IC technology in producing a wide variety of microstructures relies heavily on the orientation dependant etching observed for silicon in alkaline media. Despite the rapid growth of this industry, the chemical and electrochemical mechanisms by which anisotropic etching occurs remain poorly understood. The most common etchant systems in use are ethylenediamine-pyrocatechol-water (EPW) and potassium hydroxide-isopropanol-water (KOH-IPA), and whilst these systems are highly plane selective they each have distinct disadvantages. The occurrence of inhomogeneities such as micropyramids and pits on the surface of etched substrates is a particularly disadvantageous characteristic of many alkaline etching systems. A complete understanding of the chemical and electrochemical anisotropic etching mechanisms is essential in order to obtain more reproducible etching, improved etch rate ratios and the development of more reliable etching baths. Wet chemical etching experiments to evaluate the etching rates for the different alkali metal cations have shown that similar etch rates are observed for LiOH, NaOH and KOH but those of RbOH and CsOH are significantly lower. The presence of impurities was shown to worsen the etched wafer's surface finish obtained in these etching baths. Additives have been shown to dramatically improve the surface finish with the presence of IPA in conjunction with etchant oxygenation virtually eliminating all surface defects. Electrochemical experiments were used to assess the electrochemical behaviour of Si p-(100) in of a wide variety of etchants and variations were seen according to the etchant used. A.C impedance spectroscopy showed a variation in the flat-band potential (V FB ) according to alkali metal hydroxide etchant used. These trends were similarly observed in the presence of isopropanol. Oxygenation was observed to reproducibly alter the flat-band potentials. A.c impedance spectroscopic studies additionally confirmed the

Whistling of pipes with narrow corrugations: scale model tests and consequences for carcass design

NARCIS (Netherlands)

Golliard, J.; Belfroid, S.P.C.; Bendiksen, E.; Frimodt, C.

2013-01-01

Pipes for gas production and transport with a corrugated inner surface, as used in flexible pipes, can be subject to Flow-Induced Pulsations when the flow velocity is larger than a certain velocity. This onset velocity is dependent on the geometry of the corrugations, the operational conditions and

Corrugated thimble tube for controlling control rod descent in nuclear reactor

International Nuclear Information System (INIS)

Luetzow, H.J.

1981-01-01

A thimble tube construction is described which will provide a controlled descent for a control rod while minimizing the reaction forces which must be absorbed by the thimble tube and reducing the possibility that a foreign particle could interfere with the free descent of a control rod. A thimble tube is formed with helically-corrugate internal walls which cooperate with a control rod contained in the tube in an emergency situation to provide a progressively-increasing hydraulic restraining force as each adjacent corrugation is encountered

High density plasma via hole etching in SiC

International Nuclear Information System (INIS)

Cho, H.; Lee, K.P.; Leerungnawarat, P.; Chu, S.N.G.; Ren, F.; Pearton, S.J.; Zetterling, C.-M.

2001-01-01

Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF 6 /O 2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

Optimum fiber distribution in singlewall corrugated fiberboard

Science.gov (United States)

Millard W. Johnson; Thomas J. Urbanik; William E. Denniston

1979-01-01

Determining optimum distribution of fiber through rational design of corrugated fiberboard could result in significant reductions in fiber required to meet end-use conditions, with subsequent reductions in price pressure and extension of the softwood timber supply. A theory of thin plates under large deformations is developed that is both kinematically and physically...

Metal-assisted chemical etch porous silicon formation method

Science.gov (United States)

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Etched ion track polymer membranes for sustained drug delivery

International Nuclear Information System (INIS)

Rao, Vijayalakshmi; Amar, J.V.; Avasthi, D.K.; Narayana Charyulu, R.

2003-01-01

The method of track etching has been successfully used for the production of polymer membranes with capillary pores. In the present paper, micropore membranes have been prepared by swift heavy ion irradiation of polycarbonate (PC). PC films were irradiated with ions of gold, silicon and oxygen of varying energies and fluence. The ion tracks thus obtained were etched chemically for various time intervals to get pores and these etched films were used as membranes for the drug release. Ciprofloxacine hydrochloride was used as model drug for the release studies. The drug content was estimated spectrophotometrically. Pore size and thus the drug release is dependent on the etching conditions, ions used, their energy and fluence. Sustained drug release has been observed in these membranes. The films can be selected for practical utilization by optimizing the irradiation and etching conditions. These films can be used as transdermal patches after medical treatment

Efficiency enhancement of flexible OLEDs by using nano-corrugated substrates and conformal Ag transparent anodes

Directory of Open Access Journals (Sweden)

Li Wang

2018-05-01

Full Text Available In flexible OLEDs (FOLEDs, the traditional ITO anode has disadvantages such as refractive-index mismatches among substrate and other functional layers, leads to light loss of nearly 80%, meanwhile, its brittle nature and lack in raw materials hinder its further applications. We investigated an efficient FOLED using a semi-transparent silver (Ag anode, whereas the device was built on a nano-corrugated flexible polycarbonate (PC substrate prepared by thermal nanoimprint lithography. The corrugations were well preserved on each layer of the device, both the micro-cavity effect and surface plasmon polariton (SPP modes of light loss were effectively suppressed. As a result, the current efficiency of the FOLED using a conformal corrugated Ag anode enhanced by 100% compared with a planar Ag anode device, and enhanced by 13% with conventional ITO device. In addition, owing to the quasi-periodical arrangements of the corrugations, the device achieved broad spectra and Lambertian angular emission. The Ag anode significantly improved the bending properties of the OLED as compared to the conventional ITO device, leading to a longer lifetime in practical use. The proposed manufacturing strategy will be useful for fabricating nano corrugations on plastic substrate of FOLED in a cost-effective and convenient manner.

Efficiency enhancement of flexible OLEDs by using nano-corrugated substrates and conformal Ag transparent anodes

Science.gov (United States)

Wang, Li; Luo, Yu; Feng, Xueming; Pei, Yuechen; Lu, Bingheng; Cheng, Shenggui

2018-05-01

In flexible OLEDs (FOLEDs), the traditional ITO anode has disadvantages such as refractive-index mismatches among substrate and other functional layers, leads to light loss of nearly 80%, meanwhile, its brittle nature and lack in raw materials hinder its further applications. We investigated an efficient FOLED using a semi-transparent silver (Ag) anode, whereas the device was built on a nano-corrugated flexible polycarbonate (PC) substrate prepared by thermal nanoimprint lithography. The corrugations were well preserved on each layer of the device, both the micro-cavity effect and surface plasmon polariton (SPP) modes of light loss were effectively suppressed. As a result, the current efficiency of the FOLED using a conformal corrugated Ag anode enhanced by 100% compared with a planar Ag anode device, and enhanced by 13% with conventional ITO device. In addition, owing to the quasi-periodical arrangements of the corrugations, the device achieved broad spectra and Lambertian angular emission. The Ag anode significantly improved the bending properties of the OLED as compared to the conventional ITO device, leading to a longer lifetime in practical use. The proposed manufacturing strategy will be useful for fabricating nano corrugations on plastic substrate of FOLED in a cost-effective and convenient manner.

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

Directory of Open Access Journals (Sweden)

Iatsunskyi I. R.

2013-12-01

Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

Flow Regimes of Air-Water Counterflow Through Cross Corrugated Parallel Plates

Energy Technology Data Exchange (ETDEWEB)

de Almeida, V.F.

2000-06-07

Heretofore unknown flow regimes of air-water counterflow through a pair of transparent vertical parallel cross corrugated plates were observed via high-speed video. Air flows upward driven by pressure gradient and water, downward driven by gravity. The crimp geometry of the corrugations was drawn from typical corrugated sheets used as filling material in modern structured packed towers. Four regimes were featured, namely, rivulet, bicontinuous, flooding fronts, and flooding waves. It is conceivable that the regimes observed might constitute the basis for understanding how gas and liquid phases contend for available space in the interstices of structured packings in packed towers. Flow regime transitions were expressed in terms of liquid load (liquid superficial velocity) and gas flow factor parameters commonly used in pressure drop and capacity curves. We have carefully examined the range of parameters equivalent to the ill-understood high-liquid-flow operation in packed towers. More importantly, our findings should prove valuable in validating improved first-principles modeling of gas-liquid flows in these industrially important devices.

Trend extraction of rail corrugation measured dynamically based on the relevant low-frequency principal components reconstruction

International Nuclear Information System (INIS)

Li, Yanfu; Liu, Hongli; Ma, Ziji

2016-01-01

Rail corrugation dynamic measurement techniques are critical to guarantee transport security and guide rail maintenance. During the inspection process, low-frequency trends caused by rail fluctuation are usually superimposed on rail corrugation and seriously affect the assessment of rail maintenance quality. In order to extract and remove the nonlinear and non-stationary trends from original mixed signals, a hybrid model based ensemble empirical mode decomposition (EEMD) and modified principal component analysis (MPCA) is proposed in this paper. Compared with the existing de-trending methods based on EMD, this method first considers low-frequency intrinsic mode functions (IMFs) thought to be underlying trend components that maybe contain some unrelated components, such as white noise and low-frequency signal itself, and proposes to use PCA to accurately extract the pure trends from the IMFs containing multiple components. On the other hand, due to the energy contribution ratio between trends and mixed signals is prior unknown, and the principal components (PCs) decomposed by PCA are arranged in order of energy reduction without considering frequency distribution, the proposed method modifies traditional PCA and just selects relevant low-frequency PCs to reconstruct the trends based on the zero-crossing numbers (ZCN) of each PC. Extensive tests are presented to illustrate the effectiveness of the proposed method. The results show the proposed EEMD-PCA-ZCN is an effective tool for trend extraction of rail corrugation measured dynamically. (paper)

Exploration of suitable dry etch technologies for directed self-assembly

Science.gov (United States)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

International Nuclear Information System (INIS)

Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

2009-01-01

This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

Coupled-Mode Theory for Complex-Index, Corrugated Multilayer Stacks

DEFF Research Database (Denmark)

Lüder, Hannes; Gerken, Martina; Adam, Jost

, and by choosing a bi-orthogonal basis, obtained by solving the corresponding adjoint problem. With the once found modal solutions of the unperturbed waveguide, we can calculate the coupling coefficients, which describe the mode coupling caused by the introduced periodic corrugation. [1] C. Kluge et al., Opt......We present a coupled-mode theory (CMT) approach for modelling the modal behaviour of multi- layer thinfilm devices with complex material parameters and periodic corrugations. Our method provides fast computation and extended physical insight as compared to standard numerical methods...... to be non-Hermitian, introducing two major consequences. First, the eigenvalues (i. e. the mode neff) have to be found in the complex plane (Fig. 2). Second, the classical mode orthogonality is no longer valid. We address both challenges by a combination of three complex-root solving algorithms...

Application of the method of integral equations to calculating the electrodynamic characteristics of periodically corrugated waveguides

International Nuclear Information System (INIS)

Belov, V.E.; Rodygin, L.V.; Fil'chenko, S.E.; Yunakovskii, A.D.

1988-01-01

A method is described for calculating the electrodynamic characteristics of periodically corrugated waveguide systems. This method is based on representing the field as the solution of the Helmholtz vector equation in the form of a simple layer potential, transformed with the use of the Floquet conditions. Systems of compound integral equations based on a weighted vector function of the simple layer potential are derived for waveguides with azimuthally symmetric and helical corrugations. A numerical realization of the Fourier method is cited for seeking the dispersion relation of azimuthally symmetric waves of a circular corrugated waveguide

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Directory of Open Access Journals (Sweden)

Kun-Dar Li

2018-02-01

Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Science.gov (United States)

Li, Kun-Dar; Miao, Jin-Ru

2018-02-01

To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Graphene-assisted near-field radiative heat transfer between corrugated polar materials

International Nuclear Information System (INIS)

Liu, X. L.; Zhang, Z. M.

2014-01-01

Graphene has attracted great attention in nanoelectronics, optics, and energy harvesting. Here, the near-field radiative heat transfer between graphene-covered corrugated silica is investigated based on the exact scattering theory. It is found that graphene can improve the radiative heat flux between silica gratings by more than one order of magnitude and alleviate the performance sensitivity to lateral shift. The underlying mechanism is mainly attributed to the improved photon tunneling of modes away from phonon resonances. Besides, coating with graphene leads to nonlocal radiative transfer that breaks Derjaguin's proximity approximation and enables corrugated silica to outperform bulk silica in near-field radiation.

A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

Science.gov (United States)

Yang, Eui-Hyeok; Wild, Larry

2003-01-01

Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article

SELF-TRAPPING OF DISKOSEISMIC CORRUGATION MODES IN NEUTRON STAR SPACETIMES

Energy Technology Data Exchange (ETDEWEB)

Tsang, David [Center for Theory and Computation, Department of Astronomy, University of Maryland, College Park, MD 20742 (United States); Pappas, George [Department of Physics and Astronomy, The University of Mississippi, University, MS 38677 (United States)

2016-02-10

We examine the effects of higher-order multipole contributions of rotating neutron star (NS) spacetimes on the propagation of corrugation (c-)modes within a thin accretion disk. We find that the Lense–Thirring precession frequency, which determines the propagation region of the low-frequency fundamental corrugation modes, can experience a turnover allowing for c-modes to become self-trapped for sufficiently high dimensionless spin j and quadrupole rotational deformability α. If such self-trapping c-modes can be detected, e.g., through phase-resolved spectroscopy of the iron line for a high-spin low-mass accreting neutron star, this could potentially constrain the spin-induced NS quadrupole and the NS equation of state.

Self-Trapping of Diskoseismic Corrugation Modes in Neutron Star Spacetimes

Science.gov (United States)

Tsang, David; Pappas, George

2016-02-01

We examine the effects of higher-order multipole contributions of rotating neutron star (NS) spacetimes on the propagation of corrugation (c-)modes within a thin accretion disk. We find that the Lense-Thirring precession frequency, which determines the propagation region of the low-frequency fundamental corrugation modes, can experience a turnover allowing for c-modes to become self-trapped for sufficiently high dimensionless spin j and quadrupole rotational deformability α. If such self-trapping c-modes can be detected, e.g., through phase-resolved spectroscopy of the iron line for a high-spin low-mass accreting neutron star, this could potentially constrain the spin-induced NS quadrupole and the NS equation of state.

An Experimental Study on the Shear Hysteresis and Energy Dissipation of the Steel Frame with a Trapezoidal-Corrugated Steel Plate.

Science.gov (United States)

Shon, Sudeok; Yoo, Mina; Lee, Seungjae

2017-03-06

The steel frame reinforced with steel shear wall is a lateral load resisting system and has higher strength and shear performance than the concrete shear wall system. Especially, using corrugated steel plates in these shear wall systems improves out-of-plane stiffness and flexibility in the deformation along the corrugation. In this paper, a cyclic loading test of this steel frame reinforced with trapezoidal-corrugated steel plate was performed to evaluate the structural performance. The hysteresis behavior and the energy dissipation capacity of the steel frame were also compared according to the corrugated direction of the plate. For the test, one simple frame model without the wall and two frame models reinforced with the plate are considered and designed. The test results showed that the model reinforced with the corrugated steel plate had a greater accumulated energy dissipation capacity than the experimental result of the non-reinforced model. Furthermore, the energy dissipation curves of two reinforced frame models, which have different corrugated directions, produced similar results.

Plasma etching a ceramic composite. [evaluating microstructure

Science.gov (United States)

Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

1992-01-01

Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

Self-etching adhesive on intact enamel, with and without pre-etching.

Science.gov (United States)

Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

2012-05-01

Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

OpenAIRE

Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

2013-01-01

We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

Effect of ferric sulfate contamination on the bonding effectiveness of etch-and-rinse and self-etch adhesives to superficial dentin

OpenAIRE

Shahram Farzin Ebrahimi; Niloofar Shadman; Arezoo Abrishami

2013-01-01

Aim: This study investigated the effect of one hemostatic agent on the shear bond strength of self-etch and etch-and-rinse adhesive systems. Materials and Methods: Sixty extracted third molars were selected. After preparing a flat surface of superficial dentin, they were randomly divided into six groups. Adhesives were Tetric N-Bond, AdheSE, and AdheSE One F. Before applying adhesives, surfaces were contaminated with ViscoStat for 60 s in three groups and rinsed. Then composite were attached ...

Dry etching technology for semiconductors

CERN Document Server

Nojiri, Kazuo

2015-01-01

This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

Research on a 170 GHz, 2 MW coaxial cavity gyrotron with inner-outer corrugation

Energy Technology Data Exchange (ETDEWEB)

Hou, Shenyong, E-mail: houshenyong@sohu.com [Yangtze Normal University, Chongqing, 408001 (China); Yu, Sheng; Li, Hongfu [University of Electronics Science and Technology of China, Chengdu 610054 (China)

2015-03-15

In this paper, a coaxial cavity gyrotron with inner-outer corrugation is researched. The electron kineto-equations and the first order transmission line equations of the gyrotron are derived from Lorentz force equation and the transmission line theory, respectively. And then, a 2 MW, 170 GHz coaxial cavity gyrotron with inner-outer corrugation is designed. By means of numerical calculation, the beam-wave interaction of the coaxial cavity gyrotron with inner-outer corrugation is investigated. Results show that the efficient and the outpower of the gyrotron are 42.3% and 2.38 MW, respectively.

Beam Expansion of Blind Spot Detection Radar Antennas Using a Radome with Defected Corrugated Inner Wall

Directory of Open Access Journals (Sweden)

Hayeon Kim

2017-01-01

Full Text Available A beam expanding radome for 76.5 GHz automotive radar antennas is presented whose inner surface is engraved with corrugations. The radar used for blind spot detection (BSD requires a very wide beam width to ensure longer time for tracking out-of-sight objects. It is found that the corrugations modulate the phase velocities of the waves along the surface, which increases beam width in the far field. In addition, defects in the corrugation increase beam width even further. The presented structure satisfies the beam width requirement while keeping a low profile.

Synchrotron radiation stimulated etching of SiO sub 2 thin films with a Co contact mask for the area-selective deposition of self-assembled monolayer

CERN Document Server

Wang, C

2003-01-01

The area-selective deposition of a self-assembled monolayer (SAM) was demonstrated on a pattern structure fabricated by synchrotron radiation (SR) stimulated etching of a SiO sub 2 thin film on the Si substrate. The etching was conducted by irradiating the SiO sub 2 thin film with SR through a Co contact mask and using a mixture of SF sub 6 + O sub 2 as the reaction gas. The SR etching stopped completely at the SiO sub 2 /Si interface. After the SR etching, the Si surface and the SiO sub 2 surface beneath the Co mask were evaluated by an atomic force microscope (AFM). A dodecene SAM was deposited on the Si surface, and trichlorosilane-derived SAMs (octadecyltrichlorosilane, and octenyltrichlorosilane) were deposited on the SiO sub 2 surface beneath the Co mask. The structure of the deposited SAMs showed a densely packed and well-ordered molecular architecture, which was characterized by infrared spectroscopy, ellipsometry, and water contact angle (WCA) measurements. (author)

Squeezed-light generation in a nonlinear planar waveguide with a periodic corrugation

International Nuclear Information System (INIS)

Perina, Jan Jr.; Haderka, Ondrej; Sibilia, Concita; Bertolotti, Mario; Scalora, Michael

2007-01-01

Two-mode nonlinear interaction (second-harmonic and second-subharmonic generation) in a planar waveguide with a small periodic corrugation at the surface is studied. Scattering of the interacting fields on the corrugation leads to constructive interference that enhances the nonlinear process provided that all the interactions are phase matched. Conditions for the overall phase matching are found. Compared with a perfectly quasi-phase-matched waveguide, better values of squeezing as well as higher intensities are reached under these conditions. Procedure for finding optimum values of parameters for squeezed-light generation is described

Enhanced heat transfer with corrugated flow channel in anode side of direct methanol fuel cells

International Nuclear Information System (INIS)

Heidary, H.; Abbassi, A.; Kermani, M.J.

2013-01-01

Highlights: • Effect of corrugated flow channel on the heat exchange of DMFC is studied. • Corrugated boundary (except rectangular type) increase heat transfer up to 90%. • Average heat transfer in rectangular-corrugated boundary is less than straight one. • In Re > 60, wavy shape boundary has highest heat transfer. • In Re < 60, triangular shape boundary has highest heat transfer. - Abstract: In this paper, heat transfer and flow field analysis in anode side of direct methanol fuel cells (DMFCs) is numerically studied. To enhance the heat exchange between bottom cold wall and core flow, bottom wall of fluid delivery channel is considered as corrugated boundary instead of straight (flat) one. Four different shapes of corrugated boundary are recommended here: rectangular shape, trapezoidal shape, triangular shape and wavy (sinusoidal) shape. The top wall of the channel (catalyst layer boundary) is taken as hot boundary, because reaction occurs in catalyst layer and the bottom wall of the channel is considered as cold boundary due to coolant existence. The governing equations are numerically solved in the domain by the control volume approach based on the SIMPLE technique (1972). A wide spectrum of numerical studies is performed over a range of various shape boundaries, Reynolds number, triangle block number, and the triangle block amplitude. The performed parametric studies show that corrugated channel with trapezoidal, triangular and wavy shape enhances the heat exchange up to 90%. With these boundaries, cooling purpose of reacting flow in anode side of DMFCs would be better than straight one. Also, from the analogy between the heat and mass transfer problems, it is expected that the consumption of reacting species within the catalyst layer of DMFCs enhance. The present work provides helpful guidelines to the bipolar plate manufacturers of DMFCs to considerably enhance heat transfer and performance of the anode side of DMFC

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

Directory of Open Access Journals (Sweden)

Zhan Zhan

2017-02-01

Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

Exergy Based Performance Analysis of Double Flow Solar Air Heater with Corrugated Absorber

OpenAIRE

S. P. Sharma; Som Nath Saha

2017-01-01

This paper presents the performance, based on exergy analysis of double flow solar air heaters with corrugated and flat plate absorber. A mathematical model of double flow solar air heater based on energy balance equations has been presented and the results obtained have been compared with that of a conventional flat-plate solar air heater. The double flow corrugated absorber solar air heater performs thermally better than the flat plate double flow and conventional flat-plate solar air heate...

Hydraulic and thermal behaviour of a corrugated plane canal. Application to plate-based heat exchangers

International Nuclear Information System (INIS)

Amblard, Alain

1986-01-01

As corrugations are often used in heat exchangers in order to promote heat exchange mechanisms through a reduction of boundary layer thickness, an increase of turbulence within the boundary layer, and an increase of exchange surface, the objectives of this research thesis are, on the one hand, to determine the influence of corrugation geometry on heat exchange and friction laws, and, on the other hand, to develop a computing software to describe the flow and heat exchange in the elementary canal. This study is limited to the case of single-phase forced convection in water. After a bibliographical overview on the hydraulic and thermal behaviour of corrugated surfaces used in heat exchangers, the author presents the different studied geometries, and the experimental installation used to determine the friction and exchange coefficient in a vertical duct formed by two corrugated plates. Experimental results are presented and compared with respect to the shape of exchange surfaces. The author then reports the use of two-dimensional code used to describe the flow in an exchanger duct [fr

Numerical Investigation of Corrugated Wire Mesh Laminate

Directory of Open Access Journals (Sweden)

Jeongho Choi

2013-01-01

Full Text Available The aim of this work is to develop a numerical model of Corrugated Wire Mesh Laminate (CWML capturing all its complexities such as nonlinear material properties, nonlinear geometry and large deformation behaviour, and frictional behaviour. Development of such a model will facilitate numerical simulation of the mechanical behaviour of the wire mesh structure under various types of loading as well as the variation of the CWML configuration parameters to tailor its mechanical properties to suit the intended application. Starting with a single strand truss model consisting of four waves with a bilinear stress-strain model to represent the plastic behaviour of stainless steel, the finite element model is gradually built up to study single-layer structures with 18 strands of corrugated wire meshes consistency and double- and quadruple-layered laminates with alternating crossply orientations. The compressive behaviour of the CWML model is simulated using contact elements to model friction and is compared to the load-deflection behaviour determined experimentally in uniaxial compression tests. The numerical model of the CWML is then employed to conduct the aim of establishing the upper and lower bounds of stiffness and load capacity achievable by such structures.

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

Science.gov (United States)

Megalini, Ludovico

distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Bond efficacy and interface morphology of self-etching adhesives to ground enamel.

Science.gov (United States)

Abdalla, Ali I; El Zohairy, Ahmed A; Abdel Mohsen, Mohamed M; Feilzer, Albert J

2010-02-01

This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray) and Hybrid bond (Sun-Medical), a self-etching primer, Clearfil SE Bond (Kuraray), and an etch-and-rinse system, Admira Bond (Voco), were selected. Thirty human molars were used. The root of each tooth was removed and the crown was sectioned into halves. The convex enamel surfaces were reduced by polishing on silicone paper to prepare a flat surface. The bonding systems were applied on this surface. Prior to adhesive curing, a hollow cylinder (2.0 mm height/0.75 mm internal diameter) was placed on the treated surfaces. A resin composite was then inserted into the tube and cured. After water storage for 24 h, the tube was removed and shear bond strength was determined in a universal testing machine at a crosshead speed of 0.5 mm/min. The results were analyzed with ANOVA and the Tukey.-Kramer test at a 59 degrees confidence level. The enamel of five additional teeth was ground, and the etching component of each adhesive was applied and removed with absolute ethanol instead of being light cured. These teeth and selected fractured surfaces were examined by SEM. Adhesion to ground enamel of the Futurabond DC (25 +/- 3.5 MPa) and Clearfil SE Bond (23 +/- 2.9 MPa) self-etching systems was not significantly different from the etch-and-rinse system Admira Bond (27 +/- 2.3 MPa). The two self-etching adhesives Clearfil S Tri bond and Hybrid Bond demonstrated significantly lower bond strengths (14 +/- 1.4 MPa; 11 +/- 1.9 MPa) with no significant differences between them (p adhesive systems are dependent on the type of adhesive system. Some of the new adhesive systems showed bond strength values comparable to that of etch-and-rinse systems. There was no correlation between bond strength and morphological changes in

Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1987-01-01

When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-04-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

Multi-objective shape optimization of double pipe heat exchanger with inner corrugated tube using RSM method

International Nuclear Information System (INIS)

Han, Huai-Zhi; Li, Bing-Xi; Wu, Hao; Shao, Wei

2015-01-01

Integrated a fully developing three-dimensional heat transfer and flow model, a multi-objective optimization aims to fulfill the geometric design for double-tube heat exchangers with inner corrugated tube is investigated in this work with RSM. Dimensionless corrugation pitch (p/D), dimensionless corrugation height (H/D), dimensionless corrugation radius (r/D) and Reynolds number (Re) are considered as four design parameters. Considering the process parameters, the characteristic numbers involving heat transfer characteristic, resistance characteristic and overall heat transfer performance calculated by CFD, and are served as objective functions to the RSM (Nu c , f c , Nu c /Nu s , f c /f s and h in this paper). The results of optimal designs are a set of multiple optimum solutions, called 'Pareto optimal solutions'. It reveals the identical tendency of Nu c /Nu s and f c /f s reflecting the conflict between them that means augmenting the heat transfer performance with various design parameters in the optimal situation inevitably sacrificed the increase of flow resistance. According to the Pareto optimal curves, the optimum designing parameters of double pipe heat exchanger with inner corrugated tube under the constrains of Nu c /Nu s ≥1.2 are found to be P/D = 0.82, H/D = 0.22, r/D = 0.23, Re = 26,263, corresponding to the maximum value of η = 1.12. (authors)

Effect of input power and gas pressure on the roughening and selective etching of SiO2/Si surfaces in reactive plasmas

International Nuclear Information System (INIS)

Zhong, X. X.; Huang, X. Z.; Tam, E.; Ostrikov, K.; Colpo, P.; Rossi, F.

2010-01-01

We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as 'laboratory on a chip' and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO 2 can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO 2 /Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.

Determination of transfer parameters in corrugated plates exchangers

International Nuclear Information System (INIS)

Silva Lima Filho, S. da.

1984-01-01

In this work is presented a experimental study about the forced convenction problem in vee-corrugated exchangers, with flow in the transversal sense, and parallel plates exchangers in which the isotermal plate is equivalent to the absobing one and the other plate is adiabatic. Global values of the transfer coefficients were experimentally obtained by application of the Naphthalene Sublimation Technique in accordance with the analogy between heat and mass transfer. The results were expressed in terms of Sh sup(-) /Sc sup(0,4) that according to the analogy is equal the Nu sup(-) / Pr sup(0,4) in function of the Reynolds number. The ratio between the lenght of the channel and the average spacing between plates L/2a was ranged in all the exchangers. Parameters of transfer to angles of 45 0 and 31 0 were determined in the corrugated plates exchangers. The experimental results obtained were analyzed and compared among them. Finally practical applications of these results are presented to heat exchangers with similars geometric characteristics. (Author) [pt

Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

International Nuclear Information System (INIS)

Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R.; Acero, M.C. Esteve, J.; Montserrat, J.; El-Hassani, A.

1996-01-01

In this work the etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon is studied as a function of the processing parameters, the implantation dose and temperature, and the presence of capping layers during implantation. Etching characteristics have been probed using tetramethylammonium hydroxide or KOH solutions for different times up to 6 h. Results show that, after annealing, the minimum dose required for the formation of an efficient etch-stop layer is about 4 x 10 17 cm -2 , for an implantation energy of 75 keV. This is defined as a layer with an efficient etch selectivity in relation to Si of s ≥ 100. For larger implantation doses efficient etch selectivities larger than 100 are obtained. However, for these doses a considerable density of pits is observed in the etch-stop layer. These are related to the presence of nitrogen poor Si regions in the buried layer after annealing, due to a partial separation of silicon and silicon nitride phases during the annealing process. The influence of this separation of phases as well as nitrogen gettering in the buried layer on the etch-stop behavior is discussed as a function of the processing parameters

Characterization of selectively etched halloysite nanotubes by acid treatment

Science.gov (United States)

Garcia-Garcia, Daniel; Ferri, Jose M.; Ripoll, Laura; Hidalgo, Montserrat; Lopez-Martinez, Juan; Balart, Rafael

2017-11-01

Halloysite nanotubes (HNTs) are a type of naturally occurring inorganic nanotubes that are characterized by a different composition between their external and internal walls. The internal walls are mainly composed of alumina whilst external walls are composed of silica. This particular structure offers a dual surface chemistry that allows different selective surface treatments which can be focused on increasing the lumen, increasing porosity, etc. In this work, HNTs were chemically treated with different acids (sulphuric, acetic and acrylic acid), for 72 h at a constant temperature of 50 °C. As per the obtained results, the treatment with sulphuric acid is highly aggressive and the particular shape of HNTs is almost lost, with a remarkable increase in porosity. The BET surface area increases from 52.9 (untreated HNTs) up to 132.4 m2 g-1 with sulphuric acid treatment, thus showing an interesting potential in the field of catalysis. On the other hand, the treatment with acetic acid led to milder effects with a noticeable increase in the lumen diameter that changed from 13.8 nm (untreated HNTs) up to 18.4 nm which the subsequent increase in the loading capacity by 77.8%. The aluminium content was measured by X-ray fluorescence (XRF) and laser induced breakdown spectroscopy (LIBS). The final results using two systems, suggest a good correlation between the acid strength and the aluminium reduction. Consequently, is possible to conclude that new applications for HNTs can be derived from selective etching with acids. Sulphuric acid widens the potential of HNTs in the field of catalysis while weak acids such as acetic and acrylic acids give a controlled and homogeneous lumen increase with the corresponding increase in the loading capacity.

Modeling and experimental study of a corrugated wick type solar still: Comparative study with a simple basin type

International Nuclear Information System (INIS)

Matrawy, K.K.; Alosaimy, A.S.; Mahrous, A.-F.

2015-01-01

Highlights: • Performance of corrugated wick type solar still is compared with simple type. • Corrugated porous surface contributes by about 75% of the total productivity. • Productivity of corrugated solar still was 34% more than that for simple type. - Abstract: In the present work, the productivity of a solar still is modified by forming the evaporative surface as a corrugated shape as well as by decreasing the heat capacity with the use of a porous material. This target has been achieved by using black clothes in a corrugated shape that are immersed in water where the clothes absorbs water and get saturated by capillary effect. Along with the proposed corrugated wick type solar still, a simple basin still type was fabricated and tested to compare the enhancement accomplished by the developed solar still. Inclined reflectors were used to augment the solar radiation incident on the plane of the developed solar stills. The energy balance in the developed mathematical models takes into consideration the glass covers, the porous material, along with the portion of water exposed to the transmitted solar radiation as well as the portion of water shaded by the corrugated surface. The developed mathematical model was validated by fabricating and testing two models for the proposed and simple basin solar stills under the same conditions. Good agreement between the simulated and experimental results has been detected. It has been found that an improvement of about 34% in the productivity for the proposed wick type solar still is gained as compared to the simple basin case. Also, the best tilt angle for the inclined reflector has been found to be about 30° with respect to the vertical direction of the setup under consideration.

Etching of fused silica fiber by metallic laser-induced backside wet etching technique

Energy Technology Data Exchange (ETDEWEB)

Vass, Cs., E-mail: vasscsaba@physx.u-szeged.hu [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Kiss, B.; Kopniczky, J.; Hopp, B. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary)

2013-08-01

The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ{sub FWHM} = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm{sup 2}, while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm{sup 2}. The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

Etching of fused silica fiber by metallic laser-induced backside wet etching technique

International Nuclear Information System (INIS)

Vass, Cs.; Kiss, B.; Kopniczky, J.; Hopp, B.

2013-01-01

The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ FWHM = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm 2 , while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm 2 . The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

Plasma etching of patterned tungsten

International Nuclear Information System (INIS)

Franssila, S.

1993-01-01

Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

Comparison of heat transfer in straight and corrugated minichannels with two-phase flow

Directory of Open Access Journals (Sweden)

Peukert P.

2014-03-01

Full Text Available Measurements of heat transfer rates performed with an experimental condensation heat exchanger are reported for a corrugated minichannel tube and for a straight minichannel tube. The two cases were compared at same flow regimes. The corrugation appears advantageous for relatively low steam pressures and flow rates where much higher heat transfer rates were observed close to the steam entrance, thus allowing shortening the heat exchanger with the associated advantages of costs lowering and smaller built-up space. At high steam pressures and high flow rates both tubes performed similarly.

Experimental study on the heat transfer characteristics in corrugated and flat plate type heat exchanger

Energy Technology Data Exchange (ETDEWEB)

Park, Jung Hun; Jeong, Yong Ki; Jeon, Chung Hwan; Chang, Young June [Busan National Univ., Busan (Korea, Republic of); Lim, Hyeok [DHT, Busan (Korea, Republic of)

2003-07-01

An experiment was performed to study heat transfer characteristics between corrugated heat exchanger and flat plate type one. While heat capacity(13.86kW) was provided constantly and the flow speed was varied from 2.8 to 17.9m/s, the temperature and the pressure drop were measured. Furthermore, heat transfer coefficient, Colburn factor and Nusselt number were calculated using them. With increase of the flow speed for both exchangers, the coefficient and the pressure drop increased, but Colburn factor decreased. The coefficient, pressure drop and Colburn factor of the corrugated type were all higher than those of the flat one, which is due to the flow interruption with recirculation and reattachment of the corrugated type. The empirical correlations of Nusselt number were suggested for the tested two heat exchangers.

Surface passivation of mixed-halide perovskite CsPb(BrxI1-x)3 nanocrystals by selective etching for improved stability.

Science.gov (United States)

Jing, Qiang; Zhang, Mian; Huang, Xiang; Ren, Xiaoming; Wang, Peng; Lu, Zhenda

2017-06-08

In recent years, there has been an unprecedented rise in the research of halide perovskites because of their important optoelectronic applications, including photovoltaic cells, light-emitting diodes, photodetectors and lasers. The most pressing question concerns the stability of these materials. Here faster degradation and PL quenching are observed at higher iodine content for mixed-halide perovskite CsPb(Br x I 1-x ) 3 nanocrystals, and a simple yet effective method is reported to significantly enhance their stability. After selective etching with acetone, surface iodine is partially etched away to form a bromine-rich surface passivation layer on mixed-halide perovskite nanocrystals. This passivation layer remarkably stabilizes the nanocrystals, making their PL intensity improved by almost three orders of magnitude. It is expected that a similar passivation layer can also be applied to various other kinds of perovskite materials with poor stability issues.

Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

Energy Technology Data Exchange (ETDEWEB)

Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

2006-12-01

This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

In situ ion etching in a scanning electron microscope

International Nuclear Information System (INIS)

Dhariwal, R.S.; Fitch, R.K.

1977-01-01

A facility for ion etching in a scanning electron microscope is described which incorporates a new type of electrostatic ion source and viewing of the specimen is possible within about 30 sec after terminating the ion bombardment. Artefacts produced during etching have been studied and cone formation has been followed during its growth. The instrument has provided useful structural information on metals, alloys, and sinters. However, although insulating materials, such as plastics, glass and resins, have been successfully etched, interpretation of the resultant micrographs is more difficult. Ion etching of soft biological tissues, such as the rat duodenum was found to be of considerable interest. The observed structural features arise from the selective intake of the heavy fixation elements by different parts of the tissue. Hard biological materials, such as dental tissues and restorative materials, have also been studied and the prismatic structure of the enamel and the form and distribution of the dentinal tubules have been revealed. (author)

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.

2018-01-02

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2018-01-01

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:P

Science.gov (United States)

Hartmann, J. M.; Veillerot, M.; Prévitali, B.

2017-10-01

We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of Si:P layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min-1, 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si:C layers) were obtained at 700 °C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 °C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 × 1020 cm-3 compared to 1021 cm-3).

Dry Etching

DEFF Research Database (Denmark)

Stamate, Eugen; Yeom, Geun Young

2016-01-01

generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

Self-etching ceramic primer versus hydrofluoric acid etching: Etching efficacy and bonding performance.

Science.gov (United States)

El-Damanhoury, Hatem M; Gaintantzopoulou, Maria D

2018-01-01

This study assessed the effect of pretreatment of hybrid and glass ceramics using a self-etching primer on the shear bond strength (SBS) and surface topography, in comparison to pretreatment with hydrofluoric acid and silane. 40 rectangular discs from each ceramic material (IPS e.max CAD;EM, Vita Mark II;VM, Vita Enamic;VE), were equally divided (n=10) and assigned to one of four surface pretreatment methods; etching with 4.8% hydrofluoric acid followed by Monobond plus (HFMP), Monobond etch & prime (Ivoclar Vivadent) (MEP), No treatment (NT) as negative control and Monobond plus (Ivoclar Vivadent) with no etching (MP) as positive control. SBS of resin cement (Multilink-N, Ivoclar Vivadent) to ceramic surfaces was tested following a standard protocol. Surface roughness was evaluated using an Atomic force microscope (AFM). Surface topography and elemental analysis were analyzed using SEM/EDX. Data were analyzed with two-way analysis of variance (ANOVA) and post-hoc Bonferroni test at a significance level of α=0.05. Pretreatment with HFMP resulted in higher SBS and increased surface roughness in comparison to MEP and MP. Regardless the method of surface pretreatment, the mean SBS values of EM ceramic was significantly higher (pceramics for resin-luting cementation. Copyright © 2017 Japan Prosthodontic Society. Published by Elsevier Ltd. All rights reserved.

Electron cyclotron resonance ion stream etching of tantalum for x-ray mask absorber

International Nuclear Information System (INIS)

Oda, Masatoshi; Ozawa, Akira; Yoshihara, Hideo

1993-01-01

Electron cyclotron resonance ion stream etching of Ta film was investigated for preparing x-ray mask absorber patterns. Ta is etched by the system at a high rate and with high selectivity. Using Cl 2 as etching gas, the etch rate decreases rapidly with decreasing pattern width below 0.5 μm and large undercutting is observed. The problems are reduced by adding Ar or O 2 gas to the Cl 2 . Etching with a mixture of Cl 2 and O 2 produces highly accurate Ta absorber patterns for x-ray masks. The pattern width dependence of the etch rate and the undercutting were simulated with a model that takes account of the angular distribution of active species incident on the sample. The experimental results agree well with those calculated assuming that the incidence angles are distributed between -36 degrees and 36 degrees. The addition of O 2 or Ar enhances ion assisted etching. 16 refs., 16 figs

Impact of substrate corrugation on the sliding friction levels of adsorbed films.

Science.gov (United States)

Coffey, T; Krim, J

2005-08-12

We report a quartz crystal microbalance (QCM) study of sliding friction for solid xenon monolayers at 77 K on Cu(111), Ni(111), graphene/Ni(111), and C(60) substrates. Simulations have predicted a strong dependence of phononic friction coefficient (eta) on surface corrugation in systems with similar lattice spacing, eta approximately U(2)(0), but this has never before been shown experimentally. In order to make direct comparisons with theory, substrates with similar lattice spacing but varying amplitudes of surface corrugation were studied. QCM data reveal friction levels proportional to U(2)(0), validating current theoretical and numerical predictions. Measurements of Xe/C(60) are also included for comparison purposes.

Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage.

Science.gov (United States)

Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

2018-01-01

This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond.

Evaluation of Thermo-Fluid Performance of Compact Heat Exchanger with Corrugated Wall Channels

International Nuclear Information System (INIS)

Tak, Nam Il; Lee, Won Jae

2006-01-01

One of the key components of an indirect nuclear hydrogen production system is an intermediate heat exchanger (IHX). For the IHX, a printed circuit heat exchanger (PCHE) is known as one of the promising types due to its compactness and ability to operate at high temperatures and under high pressures. The PCHE is a relatively new heat exchanger. It has been commercially manufactured only since 1985 and solely by one British vendor, HeatricTM. Due to its short history and limited production, sufficient information about the PCHE is not available for the design of the IHX in open literatures. The predominant shape of flow channels of the PCHE is laterally corrugated. The flow in a corrugated wall channel is very interesting since a variety of flow phenomena can be considered by changing the amplitude-to-wavelength ratio. In the present paper, thermo-fluid performance of a heat exchanger with a typical PCHE geometry has been evaluated. Computational fluid dynamics (CFD) analysis was performed to analyze a gas flow behavior in a corrugated wall channel

Effect of pre-etching on sealing ability of two current self-etching adhesives

Directory of Open Access Journals (Sweden)

K Khosravi

2005-05-01

Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

High aspect ratio micro tool manufacturing for polymer replication using mu EDM of silicon, selective etching and electroforming

DEFF Research Database (Denmark)

Tosello, Guido; Bissacco, Giuliano; Tang, Peter Torben

2008-01-01

Mass fabrication of polymer micro components with high aspect ratio micro-structures requires high performance micro tools allowing the use of low cost replication processes such as micro injection moulding. In this regard an innovative process chain, based on a combination of micro electrical di...... discharge machining (mu EDM) of a silicon substrate, electroforming and selective etching was used for the manufacturing of a micro tool. The micro tool was employed for polymer replication by means of the injection moulding process....

Shear bond strength of self-etch and total-etch bonding systems at different dentin depths

Directory of Open Access Journals (Sweden)

Ana Carolina Maito Villela-Rosa

2011-04-01

Full Text Available The purpose of this study was to evaluate the dentin shear bond strength of four adhesive systems (Adper Single Bond 2, Adper Prompt L-Pop, Magic Bond DE and Self Etch Bond in regards to buccal and lingual surfaces and dentin depth. Forty extracted third molars had roots removed and crowns bisected in the mesiodistal direction. The buccal and lingual surfaces were fixed in a PVC/acrylic resin ring and were divided into buccal and lingual groups assigned to each selected adhesive. The same specimens prepared for the evaluation of superficial dentin shear resistance were used to evaluate the different depths of dentin. The specimens were identified and abraded at depths of 0.5, 1.0, 1.5 and 2.0 mm. Each depth was evaluated by ISO TR 11405 using an EMIC-2000 machine regulated at 0.5 mm/min with a 200 Kgf load cell. We performed statistical analyses on the results (ANOVA, Tukey and Scheffé tests. Data revealed statistical differences (p < 0.01 in the adhesive and depth variation as well as adhesive/depth interactions. The Adper Single Bond 2 demonstrated the highest mean values of shear bond strength. The Prompt L-Pop product, a self-etching adhesive, revealed higher mean values compared with Magic Bond DE and Self Etch Bond adhesives, a total and self-etching adhesive respectively. It may be concluded that the shear bond strength of dentin is dependent on material (adhesive system, substrate depth and adhesive/depth interaction.

Controlled ion track etching

Science.gov (United States)

George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

2006-03-01

It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

A magnetically tunable non-Bragg defect mode in a corrugated waveguide filled with liquid crystals

Science.gov (United States)

Zhang, Lu; Fan, Ya-Xian; Liu, Huan; Han, Xu; Lu, Wen-Qiang; Tao, Zhi-Yong

2018-04-01

A magnetically tunable, non-Bragg defect mode (NBDM) was created in the terahertz frequency range by inserting a defect in the middle of a periodically corrugated waveguide filled with liquid crystals (LCs). In the periodic waveguide, non-Bragg gaps beyond the Bragg ones, which appear in the transmission spectra, are created by different transverse mode resonances. The transmission spectra of the waveguide containing a defect showed that a defect mode was present inside the non-Bragg gap. The NBDM has quite different features compared to the Bragg defect mode, which includes more complex, high-order guided wave modes. In our study, we filled the corrugated waveguide with LCs to realize the tunability of the NBDM. The simulated results showed that the NBDM in a corrugated waveguide filled with LCs can be used in filters, sensors, switches, and other terahertz integrated devices.

More vertical etch profile using a Faraday cage in plasma etching

Science.gov (United States)

Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

1999-05-01

Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

Variable stiffness corrugated composite structure with shape memory polymer for morphing skin applications

Science.gov (United States)

Gong, Xiaobo; Liu, Liwu; Scarpa, Fabrizio; Leng, Jinsong; Liu, Yanju

2017-03-01

This work presents a variable stiffness corrugated structure based on a shape memory polymer (SMP) composite with corrugated laminates as reinforcement that shows smooth aerodynamic surface, extreme mechanical anisotropy and variable stiffness for potential morphing skin applications. The smart composite corrugated structure shows a low in-plane stiffness to minimize the actuation energy, but also possess high out-of-plane stiffness to transfer the aerodynamic pressure load. The skin provides an external smooth aerodynamic surface because of the one-sided filling with the SMP. Due to variable stiffness of the shape memory polymer the morphing skin exhibits a variable stiffness with a change of temperature, which can help the skin adjust its stiffness according different service environments and also lock the temporary shape without external force. Analytical models related to the transverse and bending stiffness are derived and validated using finite element techniques. The stiffness of the morphing skin is further investigated by performing a parametric analysis against the geometry of the corrugation and various sets of SMP fillers. The theoretical and numerical models show a good agreement and demonstrate the potential of this morphing skin concept for morphing aircraft applications. We also perform a feasibility study of the use of this morphing skin in a variable camber morphing wing baseline. The results show that the morphing skin concept exhibits sufficient bending stiffness to withstand the aerodynamic load at low speed (less than 0.3 Ma), while demonstrating a large transverse stiffness variation (up to 191 times) that helps to create a maximum mechanical efficiency of the structure under varying external conditions.

Device fabrication by plasma etching

International Nuclear Information System (INIS)

Mogab, C.J.

1980-01-01

Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

Energy Technology Data Exchange (ETDEWEB)

Economou, Demetre J.; Donnelly, Vincent M.

2014-05-13

Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

Topography development on selected inert gas and self-ion bombarded Si

International Nuclear Information System (INIS)

Vishnyakov, V.; Carter, G.; Goddard, D.T.; Nobes, M.J.

1995-01-01

An AFM and SEM study of the topography induced by 20 keV Si + , Ar + and Xe + ion bombardment of Si at 45 o incidence angles and for ion fluences between 10 17 and 10 20 cm -2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si + irradiation generates no repetitive micrometre scale structures. Xe + irradiation produces well developed transverse waves while Ar + irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified. (author)

Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

International Nuclear Information System (INIS)

Aydemir, A; Akin, T

2012-01-01

In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

ΔM/sub j/ transitions in homonuclear molecule scattering off corrugated surfaces. Square and rectangular lattice symmetry and purely repulsive interaction

International Nuclear Information System (INIS)

Proctor, T.R.; Kouri, D.J.; Gerber, R.B.

1984-01-01

In this paper, we present the first formal and computational studies of Δm/sub j/ transitions occurring in homonuclear molecule-corrugated surface collisions. The model potential is a pairwise additive one which correctly incorporates the fact that Δm/sub j/ transitions occur only for corrugated surfaces (provided the quantization axis is chosen to be the average surface normal). The principal results are: (a) Δm/sub j/ transitions are extremely sensitive to lattice symmetry; (b) strong selection rules obtain for specular scattering; (c) the magnitude of Δm/sub j/ -transition probabilities are strongly sensitive to surface corrugation; (d) the Δm/sub j/ transitions depend strongly on diffraction peak; (e) the ratio of molecular length to lattice dimension (r/a) has a strong influence on the magnitude of Δm/sub j/ -transition probabilities [with the probabilities increasing as (r/a) increases]; (f) Δm/sub j/ rainbows are predicted to occur as a function of the (r/a) ratio increases; (g) Δm/sub j/ transitions and the Δm/sub j/ rainbow are expected to accompany Δj-rotational rainbows; (h) such magnetic transition rainbows accompanying Δj rainbows are suggested as an explanation of recent experimental observations of quenching of NO polarization for larger Δj transitions in NO/Ag(111) scattering

Etch pit investigation of free electron concentration controlled 4H-SiC

Science.gov (United States)

Kim, Hong-Yeol; Shin, Yun Ji; Kim, Jung Gon; Harima, Hiroshi; Kim, Jihyun; Bahng, Wook

2013-04-01

Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm-2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

Science.gov (United States)

Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

2016-01-01

Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (pbracket bonding after enamel conditioning with any of the SEPs tested. The SEPs used in Groups C (Xeno V

Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

Science.gov (United States)

Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

2008-01-01

This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (padhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

Catalytically-etched hexagonal boron nitride flakes and their surface activity

International Nuclear Information System (INIS)

Kim, Do-Hyun; Lee, Minwoo; Ye, Bora; Jang, Ho-Kyun; Kim, Gyu Tae; Lee, Dong-Jin; Kim, Eok-Soo; Kim, Hong Dae

2017-01-01

Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co_3O_4, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co_3O_4 and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Catalytically-etched hexagonal boron nitride flakes and their surface activity

Energy Technology Data Exchange (ETDEWEB)

Kim, Do-Hyun, E-mail: nanotube@korea.ac.kr [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Minwoo; Ye, Bora [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Jang, Ho-Kyun; Kim, Gyu Tae [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Dong-Jin [New Functional Components Research Team, Korea Institute of Footware & Leather Technology, 152 Danggamseo-ro, Busanjin-gu, Busan 614-100 (Korea, Republic of); Kim, Eok-Soo [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Kim, Hong Dae, E-mail: hdkim@kitech.re.kr [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of)

2017-04-30

Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co{sub 3}O{sub 4}, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co{sub 3}O{sub 4} and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Self-standing corrugated Ag and Au-nanorods for plasmonic applications

DEFF Research Database (Denmark)

Habouti, S.; Mátéfi-Tempfli, M.; Solterbeck, C.-H.

2011-01-01

We use home-made Si-supported anodized alumina thin film templates for the electrodeposition of large area self-standing Ag- and Au-nanorod (Au-NR) arrays. The deposition conditions chosen, i.e. electrolyte composition and deposition voltage, lead to a corrugated rod morphology, particularly for Au...

Numerical study on the flow and heat transfer characteristics of slush nitrogen in a corrugated pipe

Science.gov (United States)

Li, Y. J.; Wu, S. Q.; Jin, T.

2017-12-01

Slush nitrogen has lower temperature, higher density and higher heat capacity than that of liquid nitrogen at normal boiling point. It is considered to be a potential coolant for high-temperature superconductive cables (HTS) that would decrease nitrogen consumption and storage cost. The corrugated pipe can help with the enhancement of heat transfer and flexibility of the coolants for HTS cables. In this paper, a 3-D Euler-Euler two-fluid model has been developed to study the flow and heat transfer characteristics of slush nitrogen in a horizontal helically corrugated pipe. By comparing with the empirical formula for pressure drop, the numerical model is confirmed to be effective for the prediction of slush nitrogen flow in corrugated pipes. The flow and heat transfer characteristics of slush nitrogen in a horizontal pipe at various working conditions (inlet solid fraction of 0-20%, inlet velocity of 0-3 m/s, heat flux of 0-12 kW/m2) have been analyzed. The friction factor of slush nitrogen is lower than that of subcooled liquid nitrogen when the slush Reynolds number is higher than 4.2×104. Moreover, the heat transfer coefficient of slush nitrogen flow in the corrugated pipe is higher than that of subcooled liquid nitrogen at velocities which is higher than that 1.76 m/s, 0.91 m/s and 0.55 m/s for slush nitrogen with solid fraction of 5%, 10% and 20%, respectively. The slush nitrogen has been confirmed to have better heat transfer performance and lower pressure drop instead of using liquid nitrogen flowing through a helically corrugated pipe.

Improvement of formability for fabricating thin continuously corrugated structures in sheet metal forming process

International Nuclear Information System (INIS)

Choi, Sung Woo; Park, Sang Hu; Park, Seong Hun; Ha, Man Yeong; Jeong, Ho Seung; Cho, Jong Rae

2012-01-01

A stamping process is widely used for fabricating various sheet metal parts for vehicles, airplanes, and electronic devices by the merit of low processing cost and high productivity. Recently, the use of thin sheets with a corrugated structure for sheet metal parts has rapidly increased for use in energy management devices, such as heat exchangers, separators in fuel cells, and many others. However, it is not easy to make thin corrugated structures directly using a single step stamping process due to their geometrical complexity and very thin thickness. To solve this problem, a multi step stamping (MSS) process that includes a heat treatment process to improve formability is proposed in this work: the sequential process is the initial stamping, heat treatment, and final shaping. By the proposed method, we achieved successful results in fabricating thin corrugated structures with an average thickness of 75μm and increased formability of about 31% compared to the single step stamping process. Such structures can be used in a plate-type heat exchanger requiring low weight and a compact shape

In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

Science.gov (United States)

Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

2014-08-01

To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

Thermodynamics of nuclear track chemical etching

Science.gov (United States)

Rana, Mukhtar Ahmed

2018-05-01

This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

Real-Time Observation of Carbon Nanotube Etching Process Using Polarized Optical Microscope.

Science.gov (United States)

Zhao, Qiuchen; Yao, Fengrui; Wang, Zequn; Deng, Shibin; Tong, Lianming; Liu, Kaihui; Zhang, Jin

2017-08-01

Controllable synthesis of carbon nanotubes (CNTs) is of great importance in its further application, which attracts broad attention. As growth and etching are the two sides in the process of material crystallography and the control of the competition between them forms the foundation for modern technology of materials design and manufacture, the understanding on etching process of carbon nanotubes is still very unclear because technically it is of great challenge to characterize the dynamics in such small one-dimensional (1D) scale. Here the real-time investigation on the etching process of CNTs is reported, by the hot-wall chemical reactor equipped with a polarized optical microscope. It is discovered that the CNT etching behavior in air is totally of random, including the etching sites, termination sites, and structure dependence. Combining with the dynamic simulation, it is revealed that the random behavior reflects the unique "self-termination" phenomenon. A structure-independent etching propagation barrier of 2.4 eV is also obtained, which indicates that the etching propagation process still follows the conventional Kinetic Wulff construction theory. The results represent the new knowledge on the etching process in carbon nanotube and can contribute to its selective enrichment. Furthermore, the "self-termination" phenomenon may be a universal behavior in 1D process. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Localized etching of polymer films using an atmospheric pressure air microplasma jet

International Nuclear Information System (INIS)

Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

2015-01-01

A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min −1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ. (paper)

Magnetically enhanced triode etching of large area silicon membranes in a molecular bromine plasma

International Nuclear Information System (INIS)

Wolfe, J.C.; Sen, S.; Pendharkar, S.V.; Mauger, P.; Shimkunas, A.R.

1992-01-01

The optimization of a process for etching 125 mm silicon membranes formed on 150 mm wafers and bonded to Pyrex rings is discussed. A magnetically enhanced triode etching system was designed to provide an intense, remote plasma surrounding the membrane while, at the same time, suppressing the discharge over the membrane itself. For the optimized molecular bromine process, the silicon etch rate is 40 nm/min and the selectivity relative to SiO 2 is 160:1. 14 refs., 6 figs

Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

Science.gov (United States)

Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

2018-04-01

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

Selective Acid Etching Improves the Bond Strength of Universal Adhesive to Sound and Demineralized Enamel of Primary Teeth.

Science.gov (United States)

Antoniazzi, Bruna Feltrin; Nicoloso, Gabriel Ferreira; Lenzi, Tathiane Larissa; Soares, Fabio Zovico Maxnuck; Rocha, Rachel de Oliveira

To evaluate the influence of enamel condition and etching strategy on bond strength of a universal adhesive in primary teeth. Thirty-six primary molars were randomly assigned to six groups (n = 6) according to the enamel condition (sound [S] and demineralized [DEM]/cariogenic challenge by pH cycling prior to restorative procedures) and adhesive system (Scotchbond Universal Adhesive [SBU]) used in either etch-and-rinse (ER) or selfetching (SE) mode, with Clearfil SE Bond as the self-etching control. The adhesives were applied to flat enamel surfaces and composite cylinders (0.72 mm2) were built up. After 24-h storage in water, specimens were subjected to the microshear test. Bond strength (MPa) data were analyzed using two-way ANOVA and Tukey's post-hoc tests (α = 0.05). Significant differences were found considering the factors adhesive system (p = 0.003) and enamel condition (p = 0.001). Demineralized enamel negatively affected the bond strength, with μSBS values approximately 50% lower than those obtained for sound enamel. SBU performed better in etch-and-rinse mode, and the bond strength found for SBU applied in self-etching mode was similar to that of CSE. Enamel etching with phosphoric acid improves the bond strength of a universal adhesive system to primary enamel. Demineralized primary enamel results in lower bond strength.

An etching mask and a method to produce an etching mask

DEFF Research Database (Denmark)

2016-01-01

The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

Flexible Engineering Structures from the Corrugated Metal Sheets - Comparison of Costs of Solutions used in the Road Building

Science.gov (United States)

Ołdakowska, E.

2017-11-01

The flexible structures from the corrugated metal sheets are used in particular in the road building, especially as passages for animals. Easy and quick assembly, as well as lower realization costs when compared to the traditional solutions increase interest in such structures. Availability and variety of systems allows for searching for solutions which are the best and optimal in the economical range. The article presents the comparison of costs of the basic materials used in various systems of flexible structures from the corrugated metal sheets. In order to determine the costs of the material solutions the data for two systems used in Poland (for construction of the upper passages for animals) since 2008 have been used. The cost estimation for the basic materials required for realization of 1 m2 of the flexible structure from the corrugated steel sheets have been prepared with use of prices obtained directly from the Polish contractors and manufacturers, as well as process included in the quarterly information (Sekocenbud). The difference of prices of materials available on the market allows the investor for selecting the structure depending on the needs and financial possibilities, as well as for achieving some savings. The savings in case of purchasing sheets of identical parameters (thickness, profile characteristics) are from approx. 4% to 8% per 1 m2 of sheet. The connectors in form of bolts M20 cl. 8.8 of various lengths are an expense from 3.00 PLN to 3.50 PLN. Those values may seem low, but taking into consideration amounts connected with construction of many square meters of structure they may become very important factor in the total investment costs.

Aeroacoustics of the swinging corrugated tube : voice of the dragon

NARCIS (Netherlands)

Nakiboglu, G.; Rudenko, O.; Hirschberg, A.

2012-01-01

When one swings a short corrugated pipe segment around one’s head, it produces a musically interesting whistling sound. As a musical toy it is called a "Hummer" and as a musical instrument, the "Voice of the Dragon." The fluid dynamics aspects of the instrument are addressed, corresponding to the

Measuring the height-to-height correlation function of corrugation in suspended graphene

International Nuclear Information System (INIS)

Kirilenko, D.A.; Brunkov, P.N.

2016-01-01

Nanocorrugation of 2D crystals is an important phenomenon since it affects their electronic and mechanical properties. The corrugation may have various sources; one of them is flexural phonons that, in particular, are responsible for the thermal conductivity of graphene. A study of corrugation of just the suspended graphene can reveal much of valuable information on the physics of this complicated phenomenon. At the same time, the suspended crystal nanorelief can hardly be measured directly because of high flexibility of the 2D crystal. Moreover, the relief portion related to rapid out-of-plane oscillations (flexural phonons) is also inaccessible by such measurements. Here we present a technique for measuring the Fourier components of the height–height correlation function H(q) of suspended graphene which includes the effect of flexural phonons. The technique is based on the analysis of electron diffraction patterns. The H(q) is measured in the range of wavevectors q≈0.4–4.5 nm"−"1. At the upper limit of this range H(q) does follow the T/κq"4 law. So, we measured the value of suspended graphene bending rigidity κ=1.2±0.4 eV at ambient temperature T≈300 K. At intermediate wave vectors, H(q) follows a slightly weaker exponent than theoretically predicted q"−"3"."1"5 but is closer to the results of the molecular dynamics simulation. At low wave vectors, the dependence becomes even weaker, which may be a sign of influence of charge carriers on the dynamics of undulations longer than 10 nm. The technique presented can be used for studying physics of flexural phonons in other 2D materials. - Highlights: • A technique for measuring free-standing 2D crystal corrugation is proposed. • The height-to-height correlation function of the suspended graphene corrugation is measured. • Various parameters of the intrinsic graphene properties are experimentally determined.

Toward reliable morphology assessment of thermosets via physical etching: Vinyl ester resin as an example

Directory of Open Access Journals (Sweden)

J. Karger-Kocsis

2013-05-01

Full Text Available The morphology of peroxide-cured, styrene crosslinked, bisphenol A-based vinyl ester (VE resin was investigated by atomic force microscopy (AFM after ‘physical’ etching with different methods. Etching was achieved by laser ablation, atmospheric plasma treatment and argon ion bombardment. Parameters of the etching were varied to get AFM scans of high topography resolution. VE exhibited a nanoscaled nodular structure the formation of which was ascribed to complex intra- and intermolecular reactions during crosslinking. The microstructure resolved after all the above physical etching techniques was similar provided that optimized etching and suitable AFM scanning conditions were selected. Nevertheless, with respect to the ‘morphology visualization’ these methods follow the power ranking: argon bombardment > plasma treatment > laser ablation.

The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching

International Nuclear Information System (INIS)

Chekurov, N; Grigoras, K; Franssila, S; Tittonen, I; Peltonen, A

2009-01-01

We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped and undoped material is at least 1000:1, greatly decreasing the mask erosion problems. The resolution of the combined FIB-DRIE process is 20 lines μm -1 with the smallest masked feature size of 40 nm. The maximum achieved aspect ratio is 15:1 (e.g. 600 nm high pillars 40 nm in diameter).

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

International Nuclear Information System (INIS)

Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

2012-01-01

In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

Two-phase flow patterns in adiabatic and diabatic corrugated plate gaps

Science.gov (United States)

Polzin, A.-E.; Kabelac, S.; de Vries, B.

2016-09-01

Correlations for two-phase heat transfer and pressure drop can be improved considerably, when they are adapted to specific flow patterns. As plate heat exchangers find increasing application as evaporators and condensers, there is a need for flow pattern maps for corrugated plate gaps. This contribution presents experimental results on flow pattern investigations for such a plate heat exchanger background, using an adiabatic visualisation setup as well as a diabatic setup. Three characteristic flow patterns were observed in the considered range of two-phase flow: bubbly flow, film flow and slug flow. The occurrence of these flow patterns is a function of mass flux, void fraction, fluid properties and plate geometry. Two different plate geometries having a corrugation angle of 27° and 63°, respectively and two different fluids (water/air and R365mfc liquid/vapor) have been analysed. A flow pattern map using the momentum flux is presented.

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN.

Science.gov (United States)

Jang, Dongsoo; Jue, Miyeon; Kim, Donghoi; Kim, Hwa Seob; Lee, Hyunkyu; Kim, Chinkyo

2018-03-07

On an SiO 2 -patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H 3 PO 4 , this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO 2 -patterned sapphire.

Aeroacoustics of the swinging corrugated tube: Voice of the Dragon

NARCIS (Netherlands)

Nakiboglu, G.; Rudenko, O.; Hirschberg, Abraham

2012-01-01

When one swings a short corrugated pipe segment around one’s head, it produces a musically interesting whistling sound. As a musical toy it is called a “Hummer” and as a musical instrument, the “Voice of the Dragon.” The fluid dynamics aspects of the instrument are addressed, corresponding to the

Fabrication and characterization of a nanometer-sized optical fiber electrode based on selective chemical etching for scanning electrochemical/optical microscopy.

Science.gov (United States)

Maruyama, Kenichi; Ohkawa, Hiroyuki; Ogawa, Sho; Ueda, Akio; Niwa, Osamu; Suzuki, Koji

2006-03-15

We have already reported a method for fabricating ultramicroelectrodes (Suzuki, K. JP Patent, 2004-45394, 2004). This method is based on the selective chemical etching of optical fibers. In this work, we undertake a detailed investigation involving a combination of etched optical fibers with various types of tapered tip (protruding-shape, double- (or pencil-) shape and triple-tapered electrode) and insulation with electrophoretic paint. Our goal is to establish a method for fabricating nanometer-sized optical fiber electrodes with high reproducibility. As a result, we realized pencil-shaped and triple-tapered electrodes that had radii in the nanometer range with high reproducibility. These nanometer-sized electrodes showed well-defined sigmoidal curves and stable diffusion-limited responses with cyclic voltammetry. The pencil-shaped optical fiber, which has a conical tip with a cone angle of 20 degrees , was effective for controlling the electrode radius. The pencil-shaped electrodes had higher reproducibility and smaller electrode radii (r(app) etched optical fiber electrodes. By using a pencil-shaped electrode with a 105-nm radius as a probe, we obtained simultaneous electrochemical and optical images of an implantable interdigitated array electrode. We achieved nanometer-scale resolution with a combination of scanning electrochemical microscopy SECM and optical microscopy. The resolution of the electrochemical and optical images indicated sizes of 300 and 930 nm, respectively. The neurites of living PC12 cells were also successfully imaged on a 1.6-microm scale by using the negative feedback mode of an SECM.

Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen

International Nuclear Information System (INIS)

Norstroem, H.; Blom, H.; Ostling, M.; Nylandsted Larsen, A.; Keinonen, J.; Berg, S.

1991-01-01

For selective etching of SiO 2 on silicon, gases or gas mixtures containing hydrogen are often used. Hydrogen from the glow discharge promotes the formation of a thin film polymer layer responsible for the selectivity of the etching process. The reactive ion etch (RIE) process is known to create damage in the silicon substrate. The influence of hydrogen on the damage and deactivation of dopants is investigated in the present work. The distribution of hydrogen in silicon, after different etching and annealing conditions have been studied. The influence of the RIE process on the charge carrier concentration in silicon has been investigated. Various analytical techniques like contact resistivity measurements, four point probe measurements, and Hall measurements have been used to determine the influence of the RIE process on the electrical properties of processed silicon wafers. The hydrogen profile in as-etched and post annealed wafers was determined by the 1 H( 15 N,αγ) 12 C nuclear reaction. The depth of the deactivated surface layer is discussed in terms of the impinging hydrogen ion energy, i.e., the possibility of H + ions to pick up an energy equal to the peak-to-peak voltage of the rf signal

Effects of carbon coating and pore corrugation on capillary condensation of nitrogen in SBA-15 mesoporous silica.

Science.gov (United States)

Morishige, Kunimitsu

2013-09-24

To examine the origin of an ink-bottle-like structure in SBA-15 formed by carbon coating and the effects of pore corrugation on capillary condensation and evaporation of a vapor in the cylindrical pores, we measured the adsorption isotherms of nitrogen at 77 K on 10 kinds of SBA-15 samples before and after a carbon coating process by the exposure to acetylene at 1073 K, as well as desorption scanning curves and subloops on the untreated samples. These SBA-15 samples were synthesized under the different conditions of initial SiO2/P123 ratio and hydrothermal treatment. SBA-15 with relatively large microporosity tends to form easily constrictions inside the main channels by the carbon coating. This strongly suggests that the rough pore walls of SBA-15 may induce the incomplete wetting of carbon layers on the pore walls to form the constrictions inside the cylindrical pores. A comparison of two subloops implies that the pores of SBA-15 synthesized with a SiO2/P123 ratio of 75 consist of an assembly of connecting domains of different diameters; that is, the pores are highly corrugated. For SBA-15 synthesized with a SiO2/P123 ratio of 60, the amplitude of the pore corrugation is significantly decreased by the prolonged hydrothermal treatment at 373 K. On the other hand, for SBA-15 synthesized with a SiO2/P123 ratio of 45, the amplitude of the corrugation is negligibly small, although the cylindrical pores are interconnected through narrow necks with each other. It is found that the smaller the amplitude of the pore corrugation, the smaller the width of the hysteresis loop.

Impact of interfacial imperfection on transverse wave in a functionally graded piezoelectric material structure with corrugated boundaries

Science.gov (United States)

Kumar Singh, Abhishek; Kumar, Santan; Kumari, Richa

2018-03-01

The propagation behavior of Love-type wave in a corrugated functionally graded piezoelectric material layered structure has been taken into account. Concretely, the layered structure incorporates a corrugated functionally graded piezoelectric material layer imperfectly bonded to a functionally graded piezoelectric material half-space. An analytical treatment has been employed to determine the dispersion relation for both cases of electrically open condition and electrically short condition. The phase velocity of the Love-type wave has been computed numerically and its dependence on the wave number has been depicted graphically for a specific type of corrugated boundary surfaces for both said conditions. The crux of the study lies in the fact that the imperfect bonding of the interface, the corrugated boundaries present in the layer, and the material properties of the layer and the half-space strongly influence the phase velocity of the Love-type wave. It can be remarkably noted that the imperfect bonding of the interface reduces the phase velocity of the Love-type wave significantly. As a special case of the problem, it is noticed that the procured dispersion relation for both cases of electrically open and electrically short conditions is in accordance with the classical Love wave equation.

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

Science.gov (United States)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

Process for etching zirconium metallic objects

International Nuclear Information System (INIS)

Panson, A.J.

1988-01-01

In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

Development of ideal solution and validation of stiffness and strength by finite element method for truss-wall corrugated cellular solids

International Nuclear Information System (INIS)

Choi, Jeong Ho; Lee, Jung Hwan; Lee, Je Hyun

2014-01-01

The objective of this study is to find the density, stiffness, and strength of truss-wall unit cell models. The diamond-corrugation, triangular-corrugation, and Navtruss-corrugation models are used for the unit cell. The ideal solutions derived for these are based on solid wall unit cell models and are developed using the Gibson-Ashby theory. To verify the ideal solutions of the models, the density, strength, and stiffness are simulated using ABAQUS software and compared with the ideal solutions on a log-log scale. The material properties of stainless steel 304 are applied. The diameter is 0.5 mm; the opening width is 0.5 mm; and the corrugation angle is 45 .deg. . Consequently, the relative Young's modulus and relative yield strength of the truss-wall unit models are good matches for the ideal expectations. It may be possible to apply a truss-wall model to diverse fields such as transportation or biomedical applications as one of the open-cell cellular solids.

Development of ideal solution and validation of stiffness and strength by finite element method for truss-wall corrugated cellular solids

Energy Technology Data Exchange (ETDEWEB)

Choi, Jeong Ho [Samjung E and W, Changwon (Korea, Republic of); Lee, Jung Hwan [Korea Institute of Materials Science,Changwon (Korea, Republic of); Lee, Je Hyun [Changwon National University, Changwon (Korea, Republic of)

2014-05-15

The objective of this study is to find the density, stiffness, and strength of truss-wall unit cell models. The diamond-corrugation, triangular-corrugation, and Navtruss-corrugation models are used for the unit cell. The ideal solutions derived for these are based on solid wall unit cell models and are developed using the Gibson-Ashby theory. To verify the ideal solutions of the models, the density, strength, and stiffness are simulated using ABAQUS software and compared with the ideal solutions on a log-log scale. The material properties of stainless steel 304 are applied. The diameter is 0.5 mm; the opening width is 0.5 mm; and the corrugation angle is 45 .deg. . Consequently, the relative Young's modulus and relative yield strength of the truss-wall unit models are good matches for the ideal expectations. It may be possible to apply a truss-wall model to diverse fields such as transportation or biomedical applications as one of the open-cell cellular solids.

Influence of Different Etching Modes on Bond Strength to Enamel using Universal Adhesive Systems.

Science.gov (United States)

Diniz, Ana Cs; Bandeca, Matheus C; Pinheiro, Larissa M; Dos Santosh Almeida, Lauber J; Torres, Carlos Rg; Borges, Alvaro H; Pinto, Shelon Cs; Tonetto, Mateus R; De Jesus Tavarez, Rudys R; Firoozmand, Leily M

2016-10-01

The adhesive systems and the techniques currently used are designed to provide a more effective adhesion with reduction of the protocol application. The objective of this study was to evaluate the bond strength of universal adhesive systems on enamel in different etching modes (self-etch and total etch). The mesial and distal halves of 52 bovine incisors, healthy, freshly extracted, were used and divided into seven experimental groups (n = 13). The enamel was treated in accordance with the following experimental conditions: FUE-Universal System - Futurabond U (VOCO) with etching; FUWE - Futurabond U (VOCO) without etching; SB-Total Etch System - Single Bond 2 (3M); SBUE-Universal System - Single Bond Universal (3M ESPE) with etching; SBUWE - Single Bond Universal (3M ESPE) without etching; CLE-Self-etch System - Clearfil SE Bond (Kuraray) was applied with etching; CLWE - Clearfil SE Bond (Kuraray) without etching. The specimens were made using the composite spectrum TPH (Dentsply) and stored in distilled water (37 ± 1°C) for 1 month. The microshear test was performed using the universal testing machine EMIC DL 2000 with the crosshead speed of 0.5 mm/minute. The bond strength values were analyzed using statistical tests (Kruskal-Wallis test and Mann-Whitney test) with Bonferroni correction. There was no statistically significant difference between groups (p adhesive interface revealed that most failures occurred between the interface composite resin and adhesive. The universal adhesive system used in dental enamel varies according to the trademark, and the previous enamel etching for universal systems and the self-etch both induced greater bond strength values. Selective enamel etching prior to the application of a universal adhesive system is a relevant strategy for better performance bonding.

Production Relationships among Cassava Farmers in Etche Local ...

African Journals Online (AJOL)

The study examined production relationships among cassava farmers in Etche L.G.A. of Rivers State, Nigeria. Multistage random sampling technique was used in the data generation exercise. A total of 96 cassava farmers were randomly selected from three out of the five clans for interview using structured questionnaire.

Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

Science.gov (United States)

Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

2010-06-01

In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

Wafer scale oblique angle plasma etching

Science.gov (United States)

Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

2017-05-23

Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

Proportion quantitative analysis and etching of {110} planes on tungsten single crystal coating surface

Energy Technology Data Exchange (ETDEWEB)

Mu, Rende, E-mail: dallasbiam@163.com [Beijing Institute of Aeronautical Materials, Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Department 5, P.O. Box 81-5, Beijing 100095 (China); Tan, Chengwen; Yu, Xiaodong [School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China)

2016-05-05

Tungsten single crystal and poly crystal were treated by electrolytic etching in a 3% by weight solution of NaOH in distilled water. The method for determining the proportion of {110} planes and characteristic morphology on the coating surface after electrolytic etching were investigated using EBSD and auto-focusing microscope. Then the optimization of process parameters for electrolytic etching is achieved. In order to compare the effect of process parameters, three process parameters were selected for the tungsten single crystal electrolytic etching. Through analyzing the change of {110} planes' proportion, we found that when the coatings are etched with 1.4 amp/cm{sup 2} and 3 min, {110} planes can be exposed in the greatest degree that can reach 61.4% on tubular surfaces. The proposed approach greatly improves the proportion of {110} planes relative to the original surface. - Highlights: • Tungsten single/poly crystals treated by electrolytic etching in solution of NaOH. • The {110} planes have the lower surface free energy than {112}. • Some {112} planes etched firstly, the {110} planes exposed at last during etching. • {110} planes exposed to the greatest extent with 1.4 amp/cm{sup 2} and 3 min.

Acid Etching as Surface Treatment Method for Luting of Glass-Ceramic Restorations, part 1: Acids, Application Protocol and Etching Effectiveness

Directory of Open Access Journals (Sweden)

Emilija Barjaktarova-Valjakova

2018-03-01

CONCLUSION: Acid etching of the bonding surface of glass - ceramic restorations is considered as the most effective treatment method that provides a reliable bond with composite cement. Selective removing of the glassy matrix of silicate ceramics results in a micromorphological three-dimensional porous surface that allows micromechanical interlocking of the luting composite.

Monotron and azimuthally corrugated: application to the high power microwaves generation

International Nuclear Information System (INIS)

Castro, Pedro Jose de

2003-01-01

The present document reports the activity of construction and initial operation of 6.7 GHz operation for high power microwave generation, the study on cylindrical resonators with azimuthally corrugated cross section, the determination of electrical conductivity of metallic materials and development of dielectric resonators for telecommunication applications

Wet etching mechanism and crystallization of indium-tin oxide layer for application in light-emitting diodes

Science.gov (United States)

Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

2018-01-01

In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

Overcoming etch challenges related to EUV based patterning (Conference Presentation)

Science.gov (United States)

Metz, Andrew W.; Cottle, Hongyun; Honda, Masanobu; Morikita, Shinya; Kumar, Kaushik A.; Biolsi, Peter

2017-04-01

Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for cost and extreme process control challenges of Self-Aligned Quad Patterning [SAQP] with continued momentum for EUV ecosystem readiness could provide cost advantages in addition to improved intra-level overlay performance relative to multiple patterning approaches. However, Line Edge Roughness [LER] and Line Width Roughness [LWR] performance of EUV defined resist images are still far from meeting technology needs or ITRS spec performance. Furthermore, extreme resist height scaling to mitigate flop over exacerbates the plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TELTM VigusTM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

The etching behaviour of silicon carbide compacts

International Nuclear Information System (INIS)

Jepps, N.W.; Page, T.F.

1981-01-01

A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

Fabrication of different pore shapes by multi-step etching technique in ion-irradiated PET membranes

Science.gov (United States)

Mo, D.; Liu, J. D.; Duan, J. L.; Yao, H. J.; Latif, H.; Cao, D. L.; Chen, Y. H.; Zhang, S. X.; Zhai, P. F.; Liu, J.

2014-08-01

A method for the fabrication of different pore shapes in polyethylene terephthalate (PET)-based track etched membranes (TEMs) is reported. A multi-step etching technique involving etchant variation and track annealing was applied to fabricate different pore shapes in PET membranes. PET foils of 12-μm thickness were irradiated with Bi ions (kinetic energy 9.5 MeV/u, fluence 106 ions/cm2) at the Heavy Ion Research Facility (HIRFL, Lanzhou). The cross-sections of fundamental pore shapes (cylinder, cone, and double cone) were analyzed. Funnel-shaped and pencil-shaped pores were obtained using a two-step etching process. Track annealing was carried out in air at 180 °C for 120 min. After track annealing, the selectivity of the etching process decreased, which resulted in isotropic etching in subsequent etching steps. Rounded cylinder and rounded cone shapes were obtained by introducing a track-annealing step in the etching process. Cup and spherical funnel-shaped pores were fabricated using a three- and four-step etching process, respectively. The described multi-step etching technique provides a controllable method to fabricate new pore shapes in TEMs. Introduction of a variety of pore shapes may improve the separation properties of TEMs and enrich the series of TEM products.

Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

International Nuclear Information System (INIS)

Dajko, G.

1991-01-01

Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

Directory of Open Access Journals (Sweden)

Chia-Pin Yeh

2016-08-01

Full Text Available Reactive ion etching (RIE technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

Etching of semiconductors and metals by the photonic jet with shaped optical fiber tips

Science.gov (United States)

Pierron, Robin; Lecler, Sylvain; Zelgowski, Julien; Pfeiffer, Pierre; Mermet, Frédéric; Fontaine, Joël

2017-10-01

The etching of semiconductors and metals by a photonic jet (PJ) generated with a shaped optical fiber tip is studied. Etched marks with a diameter of 1 μm have been realized on silicon, stainless steel and titanium with a 35 kHz pulsed laser, emitting 100 ns pulses at 1064 nm. The selection criteria of the fiber and its tip are discussed. We show that a 100/140 silica fiber is a good compromise which takes into account the injection, the working distance and the energy coupled in the higher-order modes. The energy balance is performed on the basis of the known ablation threshold of the material. Finally, the dependence between the etching depth and the number of pulses is studied. Saturation is observed probably due to a redeposition of the etched material, showing that a higher pulse energy is required for deeper etchings.

Measuring autogenous strain of concrete with corrugated moulds

DEFF Research Database (Denmark)

Tian, Qian; Jensen, Ole Mejlhede

2008-01-01

A reliable technique to quantify autogenous strain is a prerequisite to numerical modeling in stress calculations for high performance concrete. The introducing of a special kind of corrugated tube mould helps to transforming volume strain measurement into liner strain measurement in horizontal...... direction for fluid concrete, which not only realizes the continuous monitoring of the autogenous shrinkage since casting, but also effectively eliminates the disturbance resulting from gravity, temperature variation and mould restraint on measuring results. Based on this measuring technique, this paper...

Shear evaluation of tapered bridge girder panels with steel corrugated webs near the supports of continuous bridges

OpenAIRE

Zevallos, E.; Hassanein, M.F.; Real Saladrigas, Esther; Mirambell Arrizabalaga, Enrique

2016-01-01

Because of public construction budgets were cut over the last few years, new bridge girders with corrugated webs to reduce the construction costs have become more widely studied and used. In spite that tapered bridge girders with corrugated webs (BGCWs) are used in modern bridges, their shear strength and behaviour rarely exists in literature. Based on available literature, the web of the linearly tapered BGCWs may be divided into three typologies with different structural response to shear f...

Functionalization of nanochannels by radio-induced grafting polymerization on PET track-etched membranes

International Nuclear Information System (INIS)

Soto Espinoza, S.L.; Arbeitman, C.R.; Clochard, M.C.; Grasselli, M.

2014-01-01

The application of swift-heavy ion bombardment to polymers is a well-established technique to manufacture micro- and nanopores onto polymeric films to obtain porous membranes. A few years ago, it was realized that, during ion bombardment, the high energy deposition along the ion path through the polymer reached cylindrical damage regions corresponding to the core trace and the penumbra. After the etching procedure, there are still enough active sites left in the penumbra that can be used to initiate a polymerization process selectively inside the membrane pores. In this study, we report the grafting polymerization of glycidyl methacrylate onto etched PET foils to obtain functionalized nanochannels. Grafted polymers were labeled with a fluorescent tag and analyzed by different fluorescence techniques such as direct fluorescence, fluorescence microscopy and confocal microscopy. These techniques allowed identifying and quantifying the grafted regions on the polymeric foils. - Highlights: • Irradiated PET foils with swift-heavy ions were etched and grafted in a step-by-step process. • Grafting polymerization was performed on the remaining active sites after etching. • Track-etched PET membranes were fluorescently labeled by chemical functionalization. • Functionalized track-etched PET membranes were analyzed by fluorescence and confocal microscopy

Etching conditions and shape of tracks

International Nuclear Information System (INIS)

Kudo, Shuichi

1979-01-01

The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

Reversal of neuromuscular block with sugammadex: a comparison of the corrugator supercilii and adductor pollicis muscles in a randomized dose-response study.

Science.gov (United States)

Yamamoto, S; Yamamoto, Y; Kitajima, O; Maeda, T; Suzuki, T

2015-08-01

Neuromuscular monitoring using the corrugator supercilii muscle is associated with a number of challenges. The aim of this study was to assess reversal of a rocuronium-induced neuromuscular blockade with sugammadex according to monitoring either using the corrugator supercilii muscle or the adductor pollicis muscle. We hypothesized that a larger dose of sugammadex would be required to obtain a train-of-four (TOF) ratio of 1.0 with the corrugator supercilii muscle than with the adductor pollicis muscle. Forty patients aged 20-60 years and 40 patients aged ≥ 70 years were enrolled. After induction of anesthesia, we recorded the corrugator supercilii muscle response to facial nerve stimulation and the adductor pollicis muscle response to ulnar nerve stimulation using acceleromyography. All patients received 1 mg/kg rocuronium. When the first twitch (T1) of TOF recovered to 10% of control values at the corrugator supercilii, rocuronium infusion was commenced to maintain a T1 of 10% of the control at the corrugator supercilii. Immediately after discontinuation of rocuronium infusion, 2 mg/kg or 4 mg/kg of sugammadex was administered. The time for recovery to a TOF ratio of 1.0 and the number of patients not reaching a TOF ratio of 1.0 by 5 min at each dose and muscle was recorded. When neuromuscular block at the corrugator supercilii was maintained at a T1 of 10% of control, that at the adductor pollicis was deep (post-tetanic count ≤ 5). Sugammadex 4 mg/kg completely antagonized neuromuscular block at both muscles within 5 min. The time to a TOF ratio of 1.0 at the adductor pollicis was significantly longer in the group ≥ 70 years than the group 20-60 years (mean (SD): 178 (42.8) s vs. 120 (9.4) s, P sugammadex reversed neuromuscular blockade at the corrugator supercilii but not at the adductor pollicis, with 10 patients in the group 20-60 years and 8 patients in the group ≥ 70 years requiring an additional sugammadex (P�

Electrodeposited Ni nanowires-track etched P.E.T. composites as selective solar absorbers

Science.gov (United States)

Lukhwa, R.; Sone, B.; Kotsedi, L.; Madjoe, R.; Maaza, M.

2018-05-01

This contribution reports on the structural, optical and morphological properties of nanostructured flexible solar-thermal selective absorber composites for low temperature applications. The candidate material in the system is consisting of electrodeposited nickel nano-cylinders embedded in track-etched polyethylene terephthalate (PET) host membrane of pore sizes ranging between 0.3-0.8µm supported by conductive nickel thin film of about 0.5µm. PET were irradiated with 11MeV/u high charged xenon (Xe) ions at normal incidence. The tubular and metallic structure of the nickel nano-cylinders within the insulator polymeric host forms a typical ceramic-metal nano-composite "Cermet". The produced material was characterized by the following techniques: X-ray diffraction (XRD) for structural characterization to determine preferred crystallographic structure, and grain size of the materials; Scanning electron microscopy (SEM) to determine surface morphology, particle size, and visual imaging of distribution of structures on the surface of the substrate; Atomic force microscopy (AFM) to characterize surface roughness, surface morphology, and film thickness, and UV-Vis-NIR spectrophotometer to measure the reflectance, then to determine solar absorption

Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

Science.gov (United States)

Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2018-03-30

The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

Science.gov (United States)

Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

2009-03-01

An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

KAUST Repository

Wei, Binbin

2018-03-18

Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm−2 at 1.0 mA cm−2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm−3 and a maximum power density of 6.6 W cm−3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

Science.gov (United States)

Wei, Binbin; Mei, Gui; Liang, Hanfeng; Qi, Zhengbing; Zhang, Dongfang; Shen, Hao; Wang, Zhoucheng

2018-05-01

Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm-2 at 1.0 mA cm-2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm-3 and a maximum power density of 6.6 W cm-3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

Science.gov (United States)

Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

2018-02-01

Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

Dry etching for microelectronics

CERN Document Server

Powell, RA

1984-01-01

This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

International Nuclear Information System (INIS)

Jansen, H V; De Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

2009-01-01

An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O 2 ) or a fluorocarbon (FC) gas (C 4 F 8 or CHF 3 ). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF 3 and C 4 F 8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF 3 is roughly 30 times the flow of C 4 F 8 , and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O 2 is FC-free but shows only tolerable anisotropic results at

Deep reactive ion etching of fused silica using a single-coated soft mask layer for bio-analytical applications

International Nuclear Information System (INIS)

Ray, Tathagata; Zhu, Haixin; Meldrum, Deirdre R

2010-01-01

In this note, we present our results from process development and characterization of reactive ion etching (RIE) of fused silica using a single-coated soft masking layer (KMPR® 1025, Microchem Corporation, Newton, MA). The effects of a number of fluorine-radical-based gaseous chemistries, the gas flow rate, RF power and chamber pressure on the etch rate and etching selectivity of fused silica were studied using factorial experimental designs. RF power and pressure were found to be the most important factors in determining the etch rate. The highest fused silica etch rate obtained was about 933 Å min −1 by using SF 6 -based gas chemistry, and the highest etching selectivity between the fused silica and KMPR® 1025 was up to 1.2 using a combination of CF 4 , CHF 3 and Ar. Up to 30 µm deep microstructures have been successfully fabricated using the developed processes. The average area roughness (R a ) of the etched surface was measured and results showed it is comparable to the roughness obtained using a wet etching technique. Additionally, near-vertical sidewalls (with a taper angle up to 85°) have been obtained for the etched microstructures. The processes developed here can be applied to any application requiring fabrication of deep microstructures in fused silica with near-vertical sidewalls. To our knowledge, this is the first note on deep RIE of fused silica using a single-coated KMPR® 1025 masking layer and a non-ICP-based reactive ion etcher. (technical note)

Corrugation in the nitrogen-graphite potential probed by inelastic neutron scattering

DEFF Research Database (Denmark)

Hansen, Flemming Yssing; Frank, V. L. P.; Taub, H.

1990-01-01

-center energy gap of ∼0.4 THz in the acoustic-phonon branches is a factor of 2 larger than calculated from central atom-atom potentials. We conclude that current models of the corrugation in the adatom substrate potential greatly underestimate the lateral restoring forces in this relatively simple molecular...

Does active application of universal adhesives to enamel in self-etch mode improve their performance?

Science.gov (United States)

Loguercio, Alessandro D; Muñoz, Miguel Angel; Luque-Martinez, Issis; Hass, Viviane; Reis, Alessandra; Perdigão, Jorge

2015-09-01

To evaluate the effect of adhesion strategy on the enamel microshear bond strengths (μSBS), etching pattern, and in situ degree of conversion (DC) of seven universal adhesives. 84 extracted third molars were sectioned in four parts (buccal, lingual, proximal) and divided into 21 groups, according to the combination of the main factors adhesive (AdheSE Universal [ADU], All-Bond Universal [ABU], Clearfil Universal [CFU], Futurabond U [FBU], G-Bond Plus [GBP], Prime&Bond Elect (PBE), and Scotchbond Universal Adhesive [SBU]), and adhesion strategy (etch-and-rinse, active self-etch, and passive self-etch). Specimens were stored in water (37°C/24h) and tested at 1.0mm/min (μSBS). Enamel-resin interfaces were evaluated for DC using micro-Raman spectroscopy. The enamel-etching pattern was evaluated under a field-emission scanning electron microscope (direct and replica techniques). Data were analyzed with two-way ANOVA and Tukey's test (α=0.05). Active self-etch application increased μSBS and DC for five out of the seven universal adhesives when compared to passive application (padhesives in the etch-and-rinse strategy. A slight improvement in etching ability was observed in active self-etch application compared to that of passive self-etch application. Replicas of GBP and PBE applied in active self-etch mode displayed morphological features compatible with water droplets. The DC of GBP and PBE were not affected by the application/strategy mode. In light of the improved performance of universal adhesives when applied actively in SE mode, selective enamel etching with phosphoric acid may not be crucial for their adhesion to enamel. The active application of universal adhesives in self-etch mode may be a practical alternative to enamel etching in specific clinical situations. Copyright © 2015 Elsevier Ltd. All rights reserved.

Dry etching of MgCaO gate dielectric and passivation layers on GaN

International Nuclear Information System (INIS)

Hlad, M.; Voss, L.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Ren, F.

2006-01-01

MgCaO films grown by rf plasma-assisted molecular beam epitaxy and capped with Sc 2 O 3 are promising candidates as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors (HEMTs) and metal-oxide semiconductor HEMTs (MOS-HEMTs), respectively. Two different plasma chemistries were examined for etching these thin films on GaN. Inductively coupled plasmas of CH 4 /H 2 /Ar produced etch rates only in the range 20-70 A/min, comparable to the Ar sputter rates under the same conditions. Similarly slow MgCaO etch rates (∼100 A/min) were obtained with Cl 2 /Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher. The MgCaO removal rates are limited by the low volatilities of the respective etch products. The CH 4 /H 2 /Ar plasma chemistry produced a selectivity of around 2 for etching the MgCaO with respect to GaN

Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

NARCIS (Netherlands)

Abdalla, A.I.; Feilzer, A.J.

2008-01-01

Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

Soda-Anthraquinone Durian (Durio Zibethinus Murr.) Rind Linerboard and Corrugated Medium Paper: A Preliminary Test

Science.gov (United States)

Rizal Masrol, Shaiful; Irwan Ibrahim, Mohd Halim; Adnan, Sharmiza; Mubarak Sa'adon, Amir; Ika Sukarno, Khairil; Fadrol Hisham Yusoff, Mohd

2017-08-01

A preliminary test was conducted to investigate the characteristics of linerboard and corrugated medium paper made from durian rind waste. Naturally dried durian rinds were pulped according to Soda-Anthraquinone (Soda-AQ) pulping process with a condition of 20% active alkali, 0.1% AQ, 7:1 liquor to material ratio, 120 minutes cooking time and 170°C cooking temperature. The linerboard and corrugated medium paper with a basis weight of 120 gsm were prepared and evaluated according to Malaysian International Organization for Standardization (MS ISO) and Technical Association of the Pulp and Paper Industry (TAPPI). The results indicate that the characteristics of durian rind linerboard are comparable with other wood or non-wood based paper and current commercial paper. However, low CMT value for corrugated medium and water absorptiveness quality for linerboard could be improved in future. Based on the bulk density (0.672 g/cm3), burst index (3.12 kPa.m2/g) and RCT (2.00 N.m2/g), the durian rind has shown a good potential and suitable as an alternative raw material source for linerboard industry.

The effect of CF4 addition on Ru etching with inductively coupled plasma

International Nuclear Information System (INIS)

Lim, Kyu Tae; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il

2003-01-01

Ru thin films were etched in CF 4 /O 2 plasma using an ICP (inductively coupled plasma etching) system. The etch rate of Ru thin films was examined as a function of gas mixing ratio. The maximum etch rate of Ru thin films was 168 nm/min at a CF 4 /O 2 gas mixing ratio of 10 %. The selectivity of Ru over SiO 2 was 1.3. From the OES (optical emission spectroscopy), the optical emission intensity of the O radical had a maximum value at 10 % of CF 4 gas concentration and decrease with further addition of CF 4 gas. From XPS (x-ray photoelectron spectroscopy) analysis, Ru-F bonds by the chemical reaction of Ru and F appeared in the surface of the etched Ru thin film in CF 4 /O 2 chemistry. RuF 3-4 compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. In a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89 .deg.

Numerical Investigation of Structural Response of Corrugated Blast Wall Depending on Blast Load Pulse Shapes

Directory of Open Access Journals (Sweden)

Jung Min Sohn

Full Text Available Abstract Hydrocarbon explosions are one of most hazardous events for workers on offshore platforms. To protect structures against explosion loads, corrugated blast walls are typically installed. However, the profiles of real explosion loads are quite different depending on the congestion and confinement of Topside structures. As the level of congestion and confinement increases, the explosion load increases by up to 8 bar, and the rising time of the load decreases. This study primarily aims to investigate the structural behavior characteristics of corrugated blast walls under different types of explosion loadings. Four loading shapes were applied in the structural response analysis, which utilized a dynamic nonlinear finite element method.

On the long standing question of nuclear track etch induction time: Surface-cap model

International Nuclear Information System (INIS)

Rana, Mukhtar Ahmed

2008-01-01

Using a systematic set of experiments, nuclear track etch induction time measurements in a widely used CR-39 detector were completed for accessible track-forming particles (fission fragments, 5.2 MeV alpha particles and 5.9 MeV antiprotons). Results of the present work are compared with appropriately selected published results. The possibility of the use of etch induction time for charged particle identification is evaluated. Analysis of experimental results along with the use of well-established theoretical concepts yielded a model about delay in the start of chemical etching of nuclear tracks. The suggested model proposes the formation of a surface-cap (top segment) in each nuclear track consisting of chemically modified material with almost same or even higher resistance to chemical etching compared with bulk material of the track detector. Existing track formation models are reviewed very briefly, which provide one of the two bases of the proposed model. The other basis of the model is the general behavior of hot or energised material having a connection with an environment containing a number of species like ordinary air. Another reason for the delay in the start of etching is suggested as the absence of localization of etching atoms/molecules, which is present during etching at depth along the latent track

Quantifying wave propagation over a corrugated metal using 5 dBi antennas

CSIR Research Space (South Africa)

Nkosi, MC

2015-09-01

Full Text Available corrugated metal of a shipping container and also in a free space. The free space measurement is used as a reference point to study the influence of the metal on the wave propagation. The transmission coefficient measured over the shipping container...

Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

Directory of Open Access Journals (Sweden)

Ana Paula Morales Cobra Carvalho

2009-06-01

Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

Psychometric properties of startle and corrugator response in NPU, affective picture viewing, and resting state tasks.

Science.gov (United States)

Kaye, Jesse T; Bradford, Daniel E; Curtin, John J

2016-08-01

The current study provides a comprehensive evaluation of critical psychometric properties of commonly used psychophysiology laboratory tasks/measures within the NIMH RDoC. Participants (N = 128) completed the no-shock, predictable shock, unpredictable shock (NPU) task, affective picture viewing task, and resting state task at two study visits separated by 1 week. We examined potentiation/modulation scores in NPU (predictable or unpredictable shock vs. no-shock) and affective picture viewing tasks (pleasant or unpleasant vs. neutral pictures) for startle and corrugator responses with two commonly used quantification methods. We quantified startle potentiation/modulation scores with raw and standardized responses. We quantified corrugator potentiation/modulation in the time and frequency domains. We quantified general startle reactivity in the resting state task as the mean raw startle response during the task. For these three tasks, two measures, and two quantification methods, we evaluated effect size robustness and stability, internal consistency (i.e., split-half reliability), and 1-week temporal stability. The psychometric properties of startle potentiation in the NPU task were good, but concerns were noted for corrugator potentiation in this task. Some concerns also were noted for the psychometric properties of both startle and corrugator modulation in the affective picture viewing task, in particular, for pleasant picture modulation. Psychometric properties of general startle reactivity in the resting state task were good. Some salient differences in the psychometric properties of the NPU and affective picture viewing tasks were observed within and across quantification methods. © 2016 The Authors. Psychophysiology published by Wiley Periodicals, Inc. on behalf of Society for Psychophysiological Research.

Plasma etching of electrospun polymeric nanofibres

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

2006-10-25

Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

International Nuclear Information System (INIS)

Tang Longjuan; Zhu Yinfang; Yang Jinling; Li Yan; Zhou Wei; Xie Jing; Liu Yunfei; Yang Fuhua

2009-01-01

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN x :H by HF solution. A low etch rate was achieved by increasing the SiH 4 gas flow rate or annealing temperature, or decreasing the NH 3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO 2 and SiN x :H. A high etching selectivity of SiO 2 over SiN x :H was obtained using highly concentrated buffered HF.

Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

Science.gov (United States)

Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2017-10-01

To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

Track-Etched Magnetic Micropores for Immunomagnetic Isolation of Pathogens

Science.gov (United States)

Muluneh, Melaku; Shang, Wu

2014-01-01

A microfluidic chip is developed to selectively isolate magnetically tagged cells from heterogeneous suspensions, the track-etched magnetic micropore (TEMPO) filter. The TEMPO consists of an ion track-etched polycarbonate membrane coated with soft magnetic film (Ni20Fe80). In the presence of an applied field, provided by a small external magnet, the filter becomes magnetized and strong magnetic traps are created along the edges of the micropores. In contrast to conventional microfluidics, fluid flows vertically through the porous membrane allowing large flow rates while keeping the capture rate high and the chip compact. By utilizing track-etching instead of conventional semiconductor fabrication, TEMPOs can be fabricated with microscale pores over large areas A > 1 cm2 at little cost ( 500 at a flow rate of Φ = 5 mL h−1. Furthermore, the large density of micropores (ρ = 106 cm−2) allows the TEMPO to sort E. coli from unprocessed environmental and clinical samples, as the blockage of a few pores does not significantly change the behavior of the device. PMID:24535921

Etching Behavior of Aluminum Alloy Extrusions

Science.gov (United States)

Zhu, Hanliang

2014-11-01

The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

The memory characteristics of submicron feature-size PZT capacitors with PtOx top electrode by using dry-etching

International Nuclear Information System (INIS)

Huang, C.-K.; Wang, C.-C.; Wu, T.-B.

2007-01-01

Dry etching and its effect on the characteristics of submicron feature-size PbZr 1-x Ti x O 3 (PZT) capacitors with PtO x top electrode were investigated. The photoresist (PR)-masked PtO x films were etched by an Ar/(20%)Cl 2 /O 2 helicon wave plasma. A fence-free pattern with a significantly high etch rate and sidewall slope was obtained by the addition of O 2 into the etching gas mixture, due to the chemical instability of PtO x and the formation of a PtO 2 passivation layer to suppress redeposition of the etch by-products on the etched surface. The patterned PtO x electrode can be further used as a hard mask for etching the PZT film, subsequently, with the gas mixture of Ar, CF 4 and O 2 . A high etching rate of PZT and a good etching selectivity to PtO x can be obtained at 30% O 2 addition into the Ar/(50%)CF 4 plasma. The etched capacitors have a steep, 72 0 , sidewall angle with a clean surface. Moreover, the addition of O 2 into the etching gas can well preserve the properties and the fatigue endurance of PtO x /PZT capacitors

Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

Science.gov (United States)

Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

2015-01-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (padhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was dependent on the adhesive material and tooth substrate and should be carefully considered in clinical situations.

Self-aligned mask renewal for anisotropically etched circular micro- and nanostructures

International Nuclear Information System (INIS)

Kaspar, Peter; Jäckel, Heinz; Holzapfel, Sebastian; Windhab, Erich J

2011-01-01

The top–down fabrication of high aspect ratio circular micro- and nanostructures in silicon nitride is presented. A new method is introduced to increase the aspect ratio of anisotropically etched holes by a factor of more than two with respect to the results obtained from an established dry-etching process. The method is based on the renewal of an etching mask after a first etching step has been completed. Mask renewal is done by line-of-sight deposition of a masking layer on the surface of the sample, which is mounted at an angle with respect to the deposition direction. No additional alignment step is required. The proof of principle is performed for silicon nitride etching through a mask of titanium, but the method has great potential to be applicable to a wide variety of substrate–mask combinations and to find entrance into various engineering fields. Two specific applications are highlighted. Firstly, a thick silicon nitride hardmask is used for the fabrication of deeply etched photonic crystal holes in indium phosphide (InP). For holes of 280 nm diameter, a record aspect ratio of 20 and an overall selectivity of 28.5 between a positive-tone resist layer and InP are reported. Secondly, the use of perforated silicon nitride membranes for droplet formation for applications in food engineering or pharmaceutics is addressed. Preliminary results show a potential for the self-aligned mask renewal method to exceed state-of-the-art membrane quality in terms of pore size, aspect ratio and membrane stability.

Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

DEFF Research Database (Denmark)

Stöhr, Frederik; Michael-Lindhard, Jonas; Hübner, Jörg

2015-01-01

This article describes the realization of complex high-aspect ratio silicon structures with feature dimensions from 100 lm to 100nm by deep reactive ion etching using the Bosch process. As the exact shape of the sidewall profiles can be crucial for the proper functioning of a device, the authors...... of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall...

Stark effect of excitons in corrugated lateral surface superlattices: effect of centre-of-mass quantization

International Nuclear Information System (INIS)

Hong Sun

1998-11-01

The quantum confined Stark effect (QCSE) of excitons in GaAs/AlAs corrugated lateral surface superlattices (CLSSLs) is calculated. Blue and red shifts in the exciton energies are predicted for the heavy- and light-excitons in the CLSSLs, respectively, comparing with those in the unmodulated quantum well due to the different effective hole masses in the parallel direction. Sensitive dependence of the QCSE on the hole effective mass in the parallel direction is expected because of the ''centre-of-mass'' quantization (CMQ) induced by the periodic corrugated interfaces of the CLSSLs. The effect of the CMQ on the exciton mini-bands and the localization of the excitons in the CLSSLs is discussed. (author)

Effect of certain production parameters and post-production treatments on the etching characteristics of CR-39 sheets

Energy Technology Data Exchange (ETDEWEB)

Somogyi, G.; Toth-Szilagyi, M.; Hunyadi, I.; Hafez, A.-F.

1986-01-01

There is a permanent need in producing track recording detectors of well defined behaviour from CR-39 monomer. Therefore, more studies on the role of production parameters determining the stability of main etching characteristics (bulk etch rate, Vsub(B);etch rate ratio, Vsub(T)/Vsub(B);opaqueness after longer etching periods) are highly required. In our studies we have examined different commercial CR-39 sheets (Homalite, Pershore, MA-ND) to compare their registration sensitivity to selected alpha and proton energies. In addition, we have investigated the main etching parameters of CR-39 sheets manufactured under different casting conditions varying the concentration of initiator and certain additives. Finally, the effect of some post-production treatments, annealing and storage in vacuum, on the Vsub(B) and Vsub(T)/Vsub(B) values is studied.

Measurement with corrugated tubes of early-age autogenous shrinkage of cement-based material

DEFF Research Database (Denmark)

Tian, Qian; Jensen, Ole Mejlhede

2009-01-01

The use of a special corrugated mould enables transformation of volume strain into horizontal, linear strain measurement in the fluid stage. This allows continuous measurement of the autogenous shrinkage of cement-based materials since casting, and also effectively eliminates unwanted influence...

DREM: Infinite etch selectivity and optimized scallop size distribution with conventional photoresists in an adapted multiplexed Bosch DRIE process

DEFF Research Database (Denmark)

Chang, Bingdong; Leussink, Pele; Jensen, Flemming

2018-01-01

The quest to sculpture materials as small and deep as possible is an ongoing topic in micro- and nanofabrication. For this, the Bosch process has been widely used to achieve anisotropic silicon microstructures with high aspect ratio. Reactive ion etching (RIE) lag is a phenomenon in which etch ra...

The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

Science.gov (United States)

Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

Copper-assisted, anti-reflection etching of silicon surfaces

Science.gov (United States)

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

A plasmaless, photochemical etch process for porous organosilicate glass films

Science.gov (United States)

Ryan, E. Todd; Molis, Steven E.

2017-12-01

A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

Spoof surface plasmon modes on doubly corrugated metal surfaces at terahertz frequencies

International Nuclear Information System (INIS)

Liu, Yong-Qiang; Kong, Ling-Bao; Du, Chao-Hai; Liu, Pu-Kun

2016-01-01

Spoof surface plasmons (SSPs) have many potential applications such as imaging and sensing, communications, innovative leaky wave antenna and many other passive devices in the microwave and terahertz (THz) spectrum. The extraordinary properties of SSPs (e.g. extremely strong near field, enhanced beam–wave interaction) make them especially attractive for developing novel THz electronic sources. SSP modes on doubly corrugated metal surfaces are investigated and analyzed both theoretically and numerically in this paper. The analytical SSP dispersion expressions of symmetric and anti-symmetric modes are obtained with a simplified modal field expansion method; the results are also verified by the finite integration method. Additionally, the propagation losses are also considered for real copper surfaces with a limited constant conductivity in a THz regime. It is shown that the asymptotical frequency of the symmetric mode at the Brillouin boundary decreases along with the decreased gap size between these two corrugated metal surfaces while the asymptotical frequency increases for the anti-symmetric mode. The anti-symmetric mode demonstrates larger propagation losses than the symmetric mode. Further, the losses for both symmetric and anti-symmetric modes decrease when this gap size enlarges. By decreasing groove depth, the asymptotical frequency increases for both the symmetric and the anti-symmetric mode, but the variation of propagation losses is more complicated. Propagation losses increase along with the increased period. Our studies on the dispersion characteristics and propagation losses of SSP modes on this doubly corrugated metallic structure with various parameters is instructive for numerous applications such as waveguides, circuitry systems with high integration, filters and powerful electronic sources in the THz regime. (paper)

Microleakage assessment of fissure sealant following fissurotomy bur or pumice prophylaxis use before etching

Directory of Open Access Journals (Sweden)

Ali Bagherian

2013-01-01

The aim of this investigation was to compare the microleakage level of fissure sealants prepared by a fissurotomy bur or pumice prophylaxis prior to acid etching. Materials and Methods: Ninety freshly extracted healthy maxillary premolar teeth were randomly selected for this investigation. Teeth were then divided into three fissure sealant preparatory groups of A: Fissurotomy bur + acid etch; B: Pumice prophylaxis + acid etch and C: Acid etch alone. Sealant was applied to the occlusal fissures of all specimens using a plastic instrument. This was to avoid any air trap under the sealant. Sample teeth were first thermocycled (1000 cycles, 20 s dwell time and then coated with two layers of nail varnish leaving 2 mm around the sealant. This was then followed by immersion in basic fuchsin 3%. Processed teeth were sectioned longitudinally and examined under a stereomicroscope for microleakage assessment using a score of 0-3. Collected data was then subjected to Kruskall-Wallis Analysis of Variance and Mann-Whitney U-test. P < 0.05 was considered as significant. Results: Teeth in fissurotomy bur and pumice prophylaxis groups had significantly reduced level of microleakage than those in acid etch alone (P = 0.005 and P = 0.003, respectively. Conclusion: Use of fissurotomy bur and pumice prophylaxis accompanied with acid etching appears to have a more successful reduction of microleakage than acid etch alone.

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

Science.gov (United States)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Advanced Simulation Technology to Design Etching Process on CMOS Devices

Science.gov (United States)

Kuboi, Nobuyuki

2015-09-01

Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

[Evaluation of shear bond strengths of self-etching and total-etching dental adhesives to enamel and dentin].

Science.gov (United States)

Yu, Ling; Liu, Jing-Ming; Wang, Xiao-Yan; Gao, Xue-Jun

2009-03-01

To evaluate the shear bond strengths of four dental adhesives in vitro. The facial surfaces of 20 human maxillary incisors were prepared to expose fresh enamel and randomly divided into four groups, in each group 5 teeth were bonded with one adhesives: group A (Clearfil Protect Bond, self-etching two steps), group B (Adper( Prompt, self-etching one step), group C (SwissTEC SL Bond, total-etching two steps), group D (Single Bond, total-etching two steps). Shear bond strengths were determined using an universal testing machine after being stored in distilled water for 24 h at 37 degrees C. The bond strengths to enamel and dentin were (25.33 +/- 2.84) and (26.07 +/- 5.56) MPa in group A, (17.08 +/- 5.13) and (17.93 +/- 4.70) MPa in group B, (33.14 +/- 6.05) and (41.92 +/- 6.25) MPa in group C, (22.51 +/- 6.25) and (21.45 +/- 7.34) MPa in group D. Group C showed the highest and group B the lowest shear bond strength to enamel and dentin among the four groups. The two-step self-etching adhesive showed comparable shear bond strength to some of the total-etching adhesives and higher shear bond strength than one-step self-etching adhesive.

Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

International Nuclear Information System (INIS)

Li Yongliang; Xu Qiuxia

2010-01-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

International Nuclear Information System (INIS)

Luna, Lunet E; Tadjer, Marko J; Anderson, Travis J; Imhoff, Eugene A; Hobart, Karl D; Kub, Fritz J

2017-01-01

Cycles of inductively coupled SF 6 /O 2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µ m-deep trenches with 5.5 µ m-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µ m at an etch rate of ∼0.26 µ m min −1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated. (paper)

Gold core@silver semishell Janus nanoparticles prepared by interfacial etching

Science.gov (United States)

Chen, Limei; Deming, Christopher P.; Peng, Yi; Hu, Peiguang; Stofan, Jake; Chen, Shaowei

2016-07-01

Gold core@silver semishell Janus nanoparticles were prepared by chemical etching of Au@Ag core-shell nanoparticles at the air/water interface. Au@Ag core-shell nanoparticles were synthesized by chemical deposition of a silver shell onto gold seed colloids followed by the self-assembly of 1-dodecanethiol onto the nanoparticle surface. The nanoparticles then formed a monolayer on the water surface of a Langmuir-Blodgett trough, and part of the silver shell was selectively etched away by the mixture of hydrogen peroxide and ammonia in the water subphase, where the etching was limited to the side of the nanoparticles that was in direct contact with water. The resulting Janus nanoparticles exhibited an asymmetrical distribution of silver on the surface of the gold cores, as manifested in transmission electron microscopy, UV-vis absorption, and X-ray photoelectron spectroscopy measurements. Interestingly, the Au@Ag semishell Janus nanoparticles exhibited enhanced electrocatalytic activity in oxygen reduction reactions, as compared to their Au@Ag and Ag@Au core-shell counterparts, likely due to a synergistic effect between the gold cores and silver semishells that optimized oxygen binding to the nanoparticle surface.Gold core@silver semishell Janus nanoparticles were prepared by chemical etching of Au@Ag core-shell nanoparticles at the air/water interface. Au@Ag core-shell nanoparticles were synthesized by chemical deposition of a silver shell onto gold seed colloids followed by the self-assembly of 1-dodecanethiol onto the nanoparticle surface. The nanoparticles then formed a monolayer on the water surface of a Langmuir-Blodgett trough, and part of the silver shell was selectively etched away by the mixture of hydrogen peroxide and ammonia in the water subphase, where the etching was limited to the side of the nanoparticles that was in direct contact with water. The resulting Janus nanoparticles exhibited an asymmetrical distribution of silver on the surface of the gold

Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

Energy Technology Data Exchange (ETDEWEB)

Swain, Basudev, E-mail: swain@iae.re.kr [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Mishra, Chinmayee [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Hong, Hyun Seon [Sungshin University, Dept. of Interdisciplinary ECO Science, Seoul, 142-732 (Korea, Republic of); Cho, Sung-Soo [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of)

2016-05-15

Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m{sup 3} of copper and 1.35 kg/m{sup 3} of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching

Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

International Nuclear Information System (INIS)

Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

2016-01-01

Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m 3 of copper and 1.35 kg/m 3 of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching wastewater

Sub-micrometer-scale patterning on Zr-based metallic glass using focused ion beam irradiation and chemical etching

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Morita, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Yamada, Shigeru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Takano, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Ashida, Kiwamu [Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kochi 782-8502 (Japan); Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Ofune, Hitoshi [YKK Corporation, 200 Yoshida, Kurobe, Toyama 938-8601 (Japan)

2007-09-19

This report describes a method of sub-micrometer-scale rapid patterning on a Zr-based metallic glass surface using a combination of focused ion beam irradiation and wet chemical etching. We found that a Zr-based metallic glass surface irradiated with Ga{sup +} ions could be selectively etched; a concave structure with a width and depth of several tens to hundreds of nanometers rapidly formed in the irradiated area. Moreover, we determined that the etching was enhanced by the presence of Ga{sup +} ions rather than a change in the crystal structure, and the structure could be fabricated while the substrate remained amorphous. The shape of the structure was principally a function of the dose and the etch time.

Chemical etching and polishing of InP

International Nuclear Information System (INIS)

Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

1988-01-01

This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

Applications for Track-etched Templates and Films

International Nuclear Information System (INIS)

Ferain, E.

2006-01-01

Track etching technology of first generation is mainly used for the production of self-supported membranes made of polycarbonate (PC) or polyethylene terephthalate (PET) with randomly distributed pores. Typical membrane thickness is between 10 and 20 microns and pore size is in the range 0,1 μm to 10 μm. Second generation track etching technology overcomes many of limitations and offers new advantages : true nanopores down to 10 nm with well-controlled pore shape in a large range of pore densities, use of polymer (polyimide-PI) resistant to high temperature (up to 430 degree), ability to track etch a thin polymeric layer deposited on a substrate (such as glass, quartz, silicon, oxides, ...) and ability to confine nanopores into zones as small as 10 micron square (patterning process). This second generation technology, when applied to larger pore size, also contributes to a better membrane with potential benefits as e.g. a more precise cut-off. Another feature of the second generation technology is the patterning of the polymer layers - i.e. the nanopores can be grown in defined areas of the polymer layers. Smart membranes are used as separation barriers and flow controllers in devices such as chemical and biochemical sensors and analysers (lab on a chip, microtitre plates, ...). For example, a specific track etched membrane has been designed to be used as a selective separation barrier in a project intends to develop, improve and validate an efficient reliable bioartificial pancreas for human application. A variety of materials (metals, semiconductors, oxides, heterostructures) can be deposited into the pores as nanowires or nanotubes; these structures can be produced with over wide range of aspect ratios with excellent shape control, and can be either used in-situ or easily harvested by simple chemical dissolution

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

Science.gov (United States)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Plasma etching of niobium-SiO/sub x/ layers

International Nuclear Information System (INIS)

Schelle, D.; Tiller, H.J.

1986-01-01

CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

Performance analysis of solar air heater with jet impingement on corrugated absorber plate

Directory of Open Access Journals (Sweden)

Alsanossi M. Aboghrara

2017-09-01

Full Text Available This paper deals with the experimental investigation outlet temperature and efficiency, of Solar Air heater (SAH. The experimental test set up designed and fabricated to study the effect of jet impingement on the corrugated absorber plate, through circular jets in a duct flow of solar air heater, and compared with conventional solar air heater on flat plat absorber. Under effect of mass flow rate (ṁ of air and solar radiation on outlet air temperature, and efficiency, are analyzed. Results show the flow jet impingement on corrugated plat absorber is a strong function of heat transfer enhancement. The present investigation concludes that the mass flow rate of air substantially influences the heat transfer on solar air heaters. And the thermal efficiency of proposed design duct is observed almost 14% more as compare to the smooth duct. At solar radiation 500–1000 (W/M2, 308 K ambient temperature and 0.01–0.03 (Kg/S mass flow rate

Improvement of heat transfer by the use of corrugated surfaces; Amelioration du transfert de chaleur par l'emploi de surfaces corruguees

Energy Technology Data Exchange (ETDEWEB)

Gargaud, J; Paumard, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1964-07-01

This experimental work is designed to determine the friction coefficient and the Margoulis number of internally or externally corrugated cans cooled by air or CO{sub 2} under forced convection, when the Reynolds' number is between 1.5 * 10{sup 4} and 3.5 * 10{sup 6} Different corrugation profiles have been examined; they are made up of variously shaped threading, of rings, of transverse fins, of very small 'herring-bone fins, of undulations. Two types of test have been carried out: 1. tests in annular spaces using CO{sub 2} or air, where the gas circulates between an electrically heated corrugated nucleus having a constant flux and a smooth exterior channel. 2. tests on internally corrugated tubes heated by an external water current and cooled by an internal current of pressurized CO{sub 2}. The first type of test requires probe-measurement of the speeds and the temperatures in the fluid in order to obtain a friction coefficient and a Margoulis' number which are characteristic of the corrugated surface. These coefficients, on the other hand, are given directly by the second, type of test. This work shows the role and the importance of the various geometric and aerodynamic parameters such as relative roughness, the reduced pitch (ratio of the pitches at the height of the corrugation) and the Reynolds' number. (authors) [French] Ce travail experimental a pour objet la determination du coefficient de frottement et du nombre de Margoulis de gaines corruguees exterieurement ou interieurement, refroidies par de l'air ou du CO{sub 2} en convection forcee turbulente, pour des nombres de Reynolds compris entre 1,5.10{sup 4} et 3,5.10{sup 6}. Divers profils de corrugations ont ete examines; ils comprennent des filetages de formes variees, des anneaux, des ailettes transversales et des ailettes en chevrons de tres petites dimensions, des ondulations. Deux types d'essais ont ete realises: 1. des essais en espace annulaire, au CO{sub 2} ou a l'air, ou le gaz circule entre un

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

Science.gov (United States)

Evans, Laura J.; Beheim, Glenn M.

2006-01-01

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

Science.gov (United States)

Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

Optical diagnostics for plasma etching

NARCIS (Netherlands)

Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

1985-01-01

Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

Science.gov (United States)

Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

2017-04-01

Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

Selective, electrochemical etching of a semiconductor

Science.gov (United States)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

2018-03-20

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

Directory of Open Access Journals (Sweden)

Devanna Raghu

2008-01-01

Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

Bulk and track etching of PET studied by spectrophotometer

International Nuclear Information System (INIS)

Zhu, Z.Y.; Duan, J.L.; Maekawa, Y.; Koshikawa, H.; Yoshida, M.

2004-01-01

UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm -1 . Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

Science.gov (United States)

Laudrel, E.; Tillocher, T.; Meric, Y.; Lefaucheux, P.; Boutaud, B.; Dussart, R.

2018-05-01

Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2/Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µm · min-1. The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.

Modeling of the plastic flow kinematics in the forming process of the lightweight flange corrugation

Directory of Open Access Journals (Sweden)

I. V. Fomenko

2012-01-01

Full Text Available The determination of the forming maximum possibilities of the flange corrugation by stretching with a free movement of the billets end in the rigid sectional matrices detachable by the flexible filler.

An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

Science.gov (United States)

Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

2012-01-01

Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

Dry etching technologies for the advanced binary film

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Heat transfer and pressure drop studies of TiO2/DI water nanofluids in helically corrugated tubes using spiraled rod inserts

Science.gov (United States)

Anbu, S.; Venkatachalapathy, S.; Suresh, S.

2018-05-01

An experimental study on the convective heat transfer and friction factor characteristics of TiO2/DI water nanofluids in uniformly heated plain and helically corrugated tubes (HCT) with and without spiraled rod inserts (SRI) under laminar flow regime is presented in this paper. TiO2 nanoparticles with an average size of 32 nm are dispersed in deionized (DI) water to form stable suspensions containing 0.1, 0.15, 0.2, and 0.25% volume concentrations of nanoparticles. It is found that the inclusion of nanoparticles to DI water ameliorated Nusselt number which increased with nanoparticles concentration upto 0.2%. Two spiraled rod inserts made of copper with different pitches (pi = 50 mm and 30 mm) are inserted in both plain and corrugated tubes and it is found that the addition of these inserts increased the Nusselt number substantially. For Helically corrugated tube with lower pitch and maximum height of corrugation (pc = 8 mm, hc = 1 mm) with 0.2% volume concentration of nanoparticles, a maximum enhancement of 15% in Nusselt number is found without insert and with insert having lower pitch (pi = 30 mm) the enhancement is 34% when compared to DI water in plain tube. The results on friction factor show a maximum penalty of about 53.56% for the above HCT.

Selective Laser Sintering And Melting Of Pristine Titanium And Titanium Ti6Al4V Alloy Powders And Selection Of Chemical Environment For Etching Of Such Materials

Directory of Open Access Journals (Sweden)

Dobrzański L.A.

2015-09-01

Full Text Available The aim of the investigations described in this article is to present a selective laser sintering and melting technology to fabricate metallic scaffolds made of pristine titanium and titanium Ti6Al4V alloy powders. Titanium scaffolds with different properties and structure were manufactured with this technique using appropriate conditions, notably laser power and laser beam size. The purpose of such elements is to replace the missing pieces of bones, mainly cranial and facial bones in the implantation treatment process. All the samples for the investigations were designed in CAD/CAM (3D MARCARM ENGINEERING AutoFab (Software for Manufacturing Applications software suitably integrated with an SLS/SLM system. Cube-shaped test samples dimensioned 10×10×10 mm were designed for the investigations using a hexagon-shaped base cell. The so designed 3D models were transferred to the machine software and the actual rapid manufacturing process was commenced. The samples produced according to the laser sintering technology were subjected to chemical processing consisting of etching the scaffolds’ surface in different chemical mediums. Etching was carried out to remove the loosely bound powder from the surface of scaffolds, which might detach from their surface during implantation treatment and travel elsewhere in an organism. The scaffolds created were subjected to micro- and spectroscopic examinations

Reactive ion etching of microphotonic structures

International Nuclear Information System (INIS)

Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

2004-01-01

Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

Science.gov (United States)

Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

2017-08-01

The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

SU-8 etching in inductively coupled oxygen plasma

DEFF Research Database (Denmark)

Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

2013-01-01

Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

Improving indoor air quality by using the new generation of corrugated cardboard-based filters.

Science.gov (United States)

Candiani, Gabriele; Del Curto, Barbara; Cigada, Alberto

2012-09-27

Indoor Air Quality (IAQ) is strictly affected by the concentration of total suspended particulate matter (TSP). Air filtration is by far the most feasible suggestion to improve IAQ. Unfortunately, highly effective HEPA filters also have a few major weaknesses that have hindered their widespread use. There is therefore a renewed interest in developing novel, cost-effective filtration systems. We have recently reported the development of cardboard-based filters for bacterial removal that were further implemented and tested herein. A parallelepiped filter manufactured by aligning strips of corrugated cardboard and surrounded by a cardboard frame was specifically designed with an internal pocket holding a partially cut antistatic pleated fabric (HP). This filter, together with its parent version (CTRL) and a commercially sourced specimen (CAF), were assessed comparatively in a long-time test to assess their effectiveness on TSP removal. We found that the TSP abatement efficiency (E%) of the HP filter was relatively high and invariable over the 93 days of test and the pressure drop (PD%) decrease because of filter clogging was moderate. Most important, the HP filter was the most effective if assessed in terms of overall yield (Y%) and its performance was quite constant over the entire period considered. This work disclosed this novel class of corrugated cardboard-based filters as promising tools to ameliorate IAQ in light of their good TSP removal properties that endure over time. Moreover, cardboard is a lightweight, inexpensive, and eco-friendly material and corrugated cardboard-based air filters are very easy to shape and mount on and/or replace in existing ventilation systems.

Ohmic losses in coaxial resonators with longitudinal inner-outer corrugation

Energy Technology Data Exchange (ETDEWEB)

Shenyong Hou, A. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yangtze Normal University, Chongqing 408001 (China); Sheng Yu, B.; Hongfu Li, C.; Qixiang Zhao, D. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Xiang Li, E. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Queen Mary University of London, London E1 4NS (United Kingdom)

2013-05-15

In this paper, a coaxial resonator with longitudinal inner-outer corrugation is introduced. Its eigen-equation and expression of ohmic losses are derived. Ohmic losses in the cavity are investigated. Results show that ohmic losses in the outer and inner conductors share a similar variation trend, while the former is larger than the later. What's more, changes of the inner and outer slot depth and width induce different variations of ohmic losses on the surface of the inner and outer conductors.

Dispersion of helically corrugated waveguides: Analytical, numerical, and experimental study

International Nuclear Information System (INIS)

Burt, G.; Ronald, K.; Young, A.R.; Phelps, A.D.R.; Cross, A.W.; Konoplev, I.V.; He, W.; Thomson, J.; Whyte, C.G.; Samsonov, S.V.; Denisov, G.G.; Bratman, V.L.

2004-01-01

Helically corrugated waveguides have recently been studied for use in various applications such as interaction regions in gyrotron traveling-wave tubes and gyrotron backward-wave oscillators and as a dispersive medium for passive microwave pulse compression. The paper presents a summary of various methods that can be used for analysis of the wave dispersion of such waveguides. The results obtained from an analytical approach, simulations with the three-dimensional numerical code MAGIC, and cold microwave measurements are analyzed and compared

Emission Characteristics of Organic Light-Emitting Diodes and Organic Thin-Films with Planar and Corrugated Structures

Directory of Open Access Journals (Sweden)

Mao-Kuo Wei

2010-04-01

Full Text Available In this paper, we review the emission characteristics from organic light-emitting diodes (OLEDs and organic molecular thin films with planar and corrugated structures. In a planar thin film structure, light emission from OLEDs was strongly influenced by the interference effect. With suitable design of microcavity structure and layer thicknesses adjustment, optical characteristics can be engineered to achieve high optical intensity, suitable emission wavelength, and broad viewing angles. To increase the extraction efficiency from OLEDs and organic thin-films, corrugated structure with micro- and nano-scale were applied. Microstructures can effectively redirects the waveguiding light in the substrate outside the device. For nanostructures, it is also possible to couple out the organic and plasmonic modes, not only the substrate mode.

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

Science.gov (United States)

Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

2017-12-01

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Science.gov (United States)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Removal of VOCs from air stream with corrugated sheet as adsorbent

Directory of Open Access Journals (Sweden)

Rabia Arshad

2016-10-01

Full Text Available A large proportional of volatile organic compounds (VOCs are released into the environment from various industrial processes. The current study elucidates an application of a simple adsorption phenomenon for removal of three main types of VOCs, i.e., benzene, xylene and toluene, from an air stream. Two kinds of adsorbents namely acid digested adsorbent and activated carbon are prepared to assess the removal efficiency of each adsorbent in the indoor workplace environment. The results illustrate that the adsorbents prepared from corrugated sheets were remarkably effective for the removal of each pollutant type. Nevertheless, activated carbon showed high potential of adsorbing the targeted VOC compared to the acid digested adsorbent. The uptake by the adsorbents was in the following order: benzene > xylene > toluene. Moreover, maximum adsorption of benzene, toluene and xylene occurred at 20 °C and 1.5 cm/s for both adsorbents whereas minimum success was attained at 30 °C and 1.0 cm/s. However, adsorption pattern are found to be similar for each of the the three aromatic hydrocarbons. It is concluded that the corrugated sheets waste can be a considered as a successful and cost-effective solution towards effective removal of targeted pollutants in the air stream.

Mass transport enhancement in redox flow batteries with corrugated fluidic networks

Science.gov (United States)

Lisboa, Kleber Marques; Marschewski, Julian; Ebejer, Neil; Ruch, Patrick; Cotta, Renato Machado; Michel, Bruno; Poulikakos, Dimos

2017-08-01

We propose a facile, novel concept of mass transfer enhancement in flow batteries based on electrolyte guidance in rationally designed corrugated channel systems. The proposed fluidic networks employ periodic throttling of the flow to optimally deflect the electrolytes into the porous electrode, targeting enhancement of the electrolyte-electrode interaction. Theoretical analysis is conducted with channels in the form of trapezoidal waves, confirming and detailing the mass transport enhancement mechanism. In dilute concentration experiments with an alkaline quinone redox chemistry, a scaling of the limiting current with Re0.74 is identified, which compares favourably against the Re0.33 scaling typical of diffusion-limited laminar processes. Experimental IR-corrected polarization curves are presented for high concentration conditions, and a significant performance improvement is observed with the narrowing of the nozzles. The adverse effects of periodic throttling on the pumping power are compared with the benefits in terms of power density, and an improvement of up to 102% in net power density is obtained in comparison with the flow-by case employing straight parallel channels. The proposed novel concept of corrugated fluidic networks comes with facile fabrication and contributes to the improvement of the transport characteristics and overall performance of redox flow battery systems.

Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

Energy Technology Data Exchange (ETDEWEB)

Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

2016-09-01

A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

International Nuclear Information System (INIS)

Grégoire, Geneviève; Sharrock, Patrick; Prigent, Yann

2016-01-01

A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

Modeling of the angular dependence of plasma etching

International Nuclear Information System (INIS)

Guo Wei; Sawin, Herbert H.

2009-01-01

An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

Simulation and analysis on ultrasonic testing for the cement grouting defects of the corrugated pipe

Energy Technology Data Exchange (ETDEWEB)

Qingbang, Han; Ling, Chen; Changping, Zhu [Changzhou Key Laboratory of Sensor Networks and Environmental Sensing, College of IOT, Hohai University Changzhou, Jiangsu, 213022 (China)

2014-02-18

The defects exist in the cement grouting process of prestressed corrugated pipe may directly impair the bridge safety. In this paper, sound fields propagation in concrete structures with corrugated pipes and the influence of various different defects are simulated and analyzed using finite element method. The simulation results demonstrate a much complex propagation characteristic due to multiple reflection, refraction and scattering, where the scattering signals caused by metal are very strong, while the signals scattered by an air bubble are weaker. The influence of defect both in time and frequency domain are found through deconvolution treatment. In the time domain, the deconvolution signals correspond to larger defect display a larger head wave amplitude and shorter arrive time than those of smaller defects; in the frequency domain, larger defect also shows a stronger amplitude, lower center frequency and lower cutoff frequency.

Simulation and analysis on ultrasonic testing for the cement grouting defects of the corrugated pipe

International Nuclear Information System (INIS)

Qingbang, Han; Ling, Chen; Changping, Zhu

2014-01-01

The defects exist in the cement grouting process of prestressed corrugated pipe may directly impair the bridge safety. In this paper, sound fields propagation in concrete structures with corrugated pipes and the influence of various different defects are simulated and analyzed using finite element method. The simulation results demonstrate a much complex propagation characteristic due to multiple reflection, refraction and scattering, where the scattering signals caused by metal are very strong, while the signals scattered by an air bubble are weaker. The influence of defect both in time and frequency domain are found through deconvolution treatment. In the time domain, the deconvolution signals correspond to larger defect display a larger head wave amplitude and shorter arrive time than those of smaller defects; in the frequency domain, larger defect also shows a stronger amplitude, lower center frequency and lower cutoff frequency

Corrugated structure insertion for extending the SASE bandwidth up to 3% at the European XFEL

International Nuclear Information System (INIS)

Zagorodnov, I.; Feng, G.; Limberg, T.

2016-07-01

The usage of X-ray free electron laser (XFEL) in femtosecond nanocrystallography involves sequential illumination of many small crystals of arbitrary orientation. Hence a wide radiation bandwidth will be useful in order to obtain and to index a larger number of Bragg peaks used for determination of the crystal orientation. Considering the baseline configuration of the European XFEL in Hamburg, and based on beam dynamics simulations, we demonstrate here that the usage of corrugated structures allows for a considerable increase in radiation bandwidth. Data collection with a 3% bandwidth, a few microjoule radiation pulse energy, a few femtosecond pulse duration, and a photon energy of 5.4 keV is possible. For this study we have developed an analytical modal representation of the short-range wake function of the flat corrugated structures for arbitrary offsets of the source and the witness particles.

Corrugated structure insertion for extending the SASE bandwidth up to 3% at the European XFEL

Energy Technology Data Exchange (ETDEWEB)

Zagorodnov, I.; Feng, G.; Limberg, T.

2016-07-15

The usage of X-ray free electron laser (XFEL) in femtosecond nanocrystallography involves sequential illumination of many small crystals of arbitrary orientation. Hence a wide radiation bandwidth will be useful in order to obtain and to index a larger number of Bragg peaks used for determination of the crystal orientation. Considering the baseline configuration of the European XFEL in Hamburg, and based on beam dynamics simulations, we demonstrate here that the usage of corrugated structures allows for a considerable increase in radiation bandwidth. Data collection with a 3% bandwidth, a few microjoule radiation pulse energy, a few femtosecond pulse duration, and a photon energy of 5.4 keV is possible. For this study we have developed an analytical modal representation of the short-range wake function of the flat corrugated structures for arbitrary offsets of the source and the witness particles.

Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching

International Nuclear Information System (INIS)

Liu Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Tittonen, Ilkka; Grigoras, Kestutis

2013-01-01

A novel aluminum oxide (Al 2 O 3 ) hard mask fabrication process with nanoscale resolution is introduced. The Al 2 O 3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al 2 O 3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga + ) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al 2 O 3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga + FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al 2 O 3 mask protects the underlying silicon from Ga + ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated. (paper)

Effects of the Addictives on Etching Characteristics of Aluminum Foil

Energy Technology Data Exchange (ETDEWEB)

Kim, S.K.; Jang, J.M.; Chi, C.S. [Kookmin University, Seoul (Korea); Shin, D.C. [Sungnam Polytechnic, Sungnam (Korea); Lee, J.H.; Oh, H.J. [Hanseo University, Seosan (Korea)

2001-01-01

The effects of additives in the HCI etching solution on etching behaviors of aluminium foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to thoese in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only. (author). 21 refs., 10 figs.

Characterization of low-frequency acoustic wave propagation through a periodic corrugated waveguide

Science.gov (United States)

Jiang, Changyong; Huang, Lixi

2018-03-01

In this paper, a periodic corrugated waveguide structure is proposed, and its unit-cell is analyzed by the wave finite element method. In low-frequency range, the unit-cell is treated as an equivalent fluid through a homogenization process, and the equivalent acoustic parameters are obtained, which are validated by finite structure simulations and experiments. The proposed structure is shown to add tortuosity to the waveguide, hence higher equivalent fluid density is achieved, while the system elastic modulus remains unchanged. As a result, the equivalent speed of sound is smaller than normal air. The application of such change of speed of sound is demonstrated in the classic quarter-wavelength resonator based on the corrugated waveguide, which gives a lower resonance frequency with the same side branch length. When the waveguide is filled with porous materials, the added tortuosity enhances the broadband, low-frequency sound absorption by increasing the equivalent mass without bringing in excess damping, the latter being partly responsible for the poor performance of usual porous materials in the low-frequency region. Therefore, the proposed structure provides another dimension for the design and optimization of porous sound absorption materials.

Ion-beam etching of ramps in thin film heterostructures

International Nuclear Information System (INIS)

Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

2002-01-01

Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

O2 Plasma Etching and Antistatic Gun Surface Modifications for CNT Yarn Microelectrode Improve Sensitivity and Antifouling Properties.

Science.gov (United States)

Yang, Cheng; Wang, Ying; Jacobs, Christopher B; Ivanov, Ilia N; Venton, B Jill

2017-05-16

Carbon nanotube (CNT) based microelectrodes exhibit rapid and selective detection of neurotransmitters. While different fabrication strategies and geometries of CNT microelectrodes have been characterized, relatively little research has investigated ways to selectively enhance their electrochemical properties. In this work, we introduce two simple, reproducible, low-cost, and efficient surface modification methods for carbon nanotube yarn microelectrodes (CNTYMEs): O 2 plasma etching and antistatic gun treatment. O 2 plasma etching was performed by a microwave plasma system with oxygen gas flow and the optimized time for treatment was 1 min. The antistatic gun treatment flows ions by the electrode surface; two triggers of the antistatic gun was the optimized number on the CNTYME surface. Current for dopamine at CNTYMEs increased 3-fold after O 2 plasma etching and 4-fold after antistatic gun treatment. When the two treatments were combined, the current increased 12-fold, showing the two effects are due to independent mechanisms that tune the surface properties. O 2 plasma etching increased the sensitivity due to increased surface oxygen content but did not affect surface roughness while the antistatic gun treatment increased surface roughness but not oxygen content. The effect of tissue fouling on CNT yarns was studied for the first time, and the relatively hydrophilic surface after O 2 plasma etching provided better resistance to fouling than unmodified or antistatic gun treated CNTYMEs. Overall, O 2 plasma etching and antistatic gun treatment improve the sensitivity of CNTYMEs by different mechanisms, providing the possibility to tune the CNTYME surface and enhance sensitivity.

Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

Science.gov (United States)

Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

2015-01-01

The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

A technology to improve formability for aluminum alloy thin-wall corrugated sheet component hydroforming

Directory of Open Access Journals (Sweden)

Lang Lihui

2015-01-01

Full Text Available The explosively forming projectile (EFP had been traditional adopted for the aluminum thin-walled corrugated sheet, whose deformation range is large but the formability is poor, and this process usually has problems of poor surface quality, long manufacturing cycle and high cost. The active hydroforming process was suggested to solve these issues during EFP. A new technology named as blank bulging by turning the upside down active hydroforming technology was proposed to overcome difficulties in non-uniform thickness distribution and cracking failure of corrugated sheet during the conventional hydroforming process. Both numerical simulations and experiments were conducted for this new technology. The result show that the deformation capacity of aluminum alloys can be improved effectively, and the more uniform distribution of wall thickness was obtained by this new method. It is conducted that the new method is universal for thin-walled, shallow drawing parts with complex section.

Numerical Simulation of Turbulent Half-corrugated Channel Flow by Hydrophilic and Hydrophobic Surfaces

Directory of Open Access Journals (Sweden)

M. R. Rastan

2018-03-01

Full Text Available In the first part of the present study, a two dimensional half-corrugated channel flow is simulated at Reynolds number of 104, in no-slip condition (hydrophilic surfaces( using various low Reynolds turbulence models as well as standard k-ε model; and an appropriate turbulence model (k-ω 1998 model( is proposed. Then, in order to evaluate the proposed solution method in simulation of flow adjacent to hydrophobic surfaces, turbulent flow is simulated in simple channel and the results are compared with the literature. Finally, two dimensional half-corrugated channel flow at Reynolds number of 104 is simulated again in vicinity of hydrophobic surfaces for varoius slip lengths. The results show that this method is capable of drag reduction in such a way that an increase of 200 μm in slip length leads to a massive drag reduction up to 38%. In addition, to access a significant drag reduction in turbulent flows, the non-dimensionalized slip length should be larger than the minimum.

Shear bond strength and debonding characteristics of metal and ceramic brackets bonded with conventional acid-etch and self-etch primer systems: An in-vivo study.

Science.gov (United States)

Mirzakouchaki, Behnam; Shirazi, Sajjad; Sharghi, Reza; Shirazi, Samaneh; Moghimi, Mahsan; Shahrbaf, Shirin

2016-02-01

Different in-vitro studies have reported various results regarding shear bond strength (SBS) of orthodontic brackets when SEP technique is compared to conventional system. This in-vivo study was designed to compare the effect of conventional acid-etching and self-etching primer adhesive (SEP) systems on SBS and debonding characteristics of metal and ceramic orthodontic brackets. 120 intact first maxillary and mandibular premolars of 30 orthodontic patients were selected and bonded with metal and ceramic brackets using conventional acid-etch or self-etch primer system. The bonded brackets were incorporated into the wire during the study period to simulate the real orthodontic treatment condition. The teeth were extracted and debonded after 30 days. The SBS, debonding characteristics and adhesive remnant indices (ARI) were determined in all groups. The mean SBS of metal brackets was 10.63±1.42 MPa in conventional and 9.38±1.53 MPa in SEP system, (P=0.004). No statistically significant difference was noted between conventional and SEP systems in ceramic brackets. The frequency of 1, 2 and 3 ARI scores and debonding within the adhesive were the most common among all groups. No statistically significant difference was observed regarding ARI or failure mode of debonded specimens in different brackets or bonding systems. The SBS of metal brackets bonded using conventional system was significantly higher than SEP system, although the SBS of SEP system was clinically acceptable. No significant difference was found between conventional and SEP systems used with ceramic brackets. Total SBS of metal brackets was significantly higher than ceramic brackets. Due to adequate SBS of SEP system in bonding the metal brackets, it can be used as an alternative for conventional system. Shear bond strength, Orthodontic brackets, Adhesive remnant index, self-etch.

Directional Etching of Silicon by Silver Nanostructures

Science.gov (United States)

Sharma, Pradeep; Wang, Yuh-Lin

2011-02-01

We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

Ga+ focused-ion-beam implantation-induced masking for H2 etching of ZnO films

International Nuclear Information System (INIS)

Fang, Hsin-Chiao; Huang, Jun-Han; Chu, Wen-Huei; Liu, Chuan-Pu

2010-01-01

Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga + fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 x 10 16 cm -2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H 2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤ 2.8 x 10 16 cm -2 , Ga + ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H 2 etching due to the higher electronegativity of Ga + towards oxygen. However, for the fluences ≥ 4.6 x 10 16 cm -2 , the surface particles are responsible for the etch stop and are identified as ZnGa 2 O 4 . We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

Directory of Open Access Journals (Sweden)

Shiva Alavi

2014-01-01

Full Text Available Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under Χ10 magnification and adhesive remnant index (ARI score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa (P = 0.41. There was no significant difference in the ARI scores between two groups (P = 0.08. However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching.

Optimization of silver-assisted nano-pillar etching process in silicon

Science.gov (United States)

Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

2015-12-01

In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Miessler, Andre; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

2012-07-01

In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using a Kaufman-typed ion source with NF{sub 3} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2'' fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

Dual nature of localization in guiding systems with randomly corrugated boundaries: Anderson-type versus entropic

International Nuclear Information System (INIS)

Tarasov, Yu.V.; Shostenko, L.D.

2015-01-01

A unified theory for the conductance of an infinitely long multimode quantum wire whose finite segment has randomly rough lateral boundaries is developed. It enables one to rigorously take account of all feasible mechanisms of wave scattering, both related to boundary roughness and to contacts between the wire rough section and the perfect leads within the same technical frameworks. The rough part of the conducting wire is shown to act as a mode-specific randomly modulated effective potential barrier whose height is governed essentially by the asperity slope. The mean height of the barrier, which is proportional to the average slope squared, specifies the number of conducting channels. Under relatively small asperity amplitude this number can take on arbitrary small, up to zero, values if the asperities are sufficiently sharp. The consecutive channel cut-off that arises when the asperity sharpness increases can be regarded as a kind of localization, which is not related to the disorder per se but rather is of entropic or (equivalently) geometric origin. The fluctuating part of the effective barrier results in two fundamentally different types of guided wave scattering, viz., inter- and intramode scattering. The intermode scattering is shown to be for the most part very strong except in the cases of (a) extremely smooth asperities, (b) excessively small length of the corrugated segment, and (c) the asperities sharp enough for only one conducting channel to remain in the wire. Under strong intermode scattering, a new set of conducting channels develops in the corrugated waveguide, which have the form of asymptotically decoupled extended modes subject to individual solely intramode random potentials. In view of this fact, two transport regimes only are realizable in randomly corrugated multimode waveguides, specifically, the ballistic and the localized regime, the latter characteristic of one-dimensional random systems. Two kinds of localization are thus shown to

Influence factors on etching rate of PET nuclear pore membrane

International Nuclear Information System (INIS)

Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

2014-01-01

Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

A study on decontamination of TRU, Co, and Mo using plasma surface etching technique

International Nuclear Information System (INIS)

Seo, Y.D.; Kim, Y.S.; Paek, S.H.; Lee, K.H.; Jung, C.H.; Oh, W.Z.

2001-01-01

Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability and the effectiveness of this new dry processing technique are experimentally investigated by examining the etching reaction of UO 2 , Co, and Mo in r.f. plasma with the etchant gas of CF 4 /O 2 mixture. UO 2 is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds and metallic Co and Mo are selected because they are the principal contaminants in the spent nuclear components such as valves and pipes made of stainless steel or INCONEL. Results show that in all cases maximum etching rate is achieved when the mole fraction of O 2 to CF 4 /O 2 mixture gas is 20 %, regardless of temperature and r.f. power. (author)

Patterning functional materials using channel diffused plasma-etched self-assembled monolayer templates

NARCIS (Netherlands)

George, A.; Maijenburg, A.W.; Maas, M.G.; Blank, David H.A.; ten Elshof, Johan E.

2011-01-01

A simple and cost-effective methodology for large-area micrometer-scale patterning of a wide range of metallic and oxidic functional materials is presented. Self-assembled monolayers (SAM) of alkyl thiols on Au were micropatterned by channel-diffused oxygen plasma etching, a method in which selected

Optimization of silver-assisted nano-pillar etching process in silicon

International Nuclear Information System (INIS)

Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

2015-01-01

Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert ® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H 2 O 2 ), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H 2 O 2 concentration and etching time. The predicted model is in good agreement with the experimental data where R 2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time

Optimization of silver-assisted nano-pillar etching process in silicon

Energy Technology Data Exchange (ETDEWEB)

Azhari, Ayu Wazira, E-mail: ayuwazira@unimap.edu.my [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); School of Environmental Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); Desa, Mohd Khairunaz Mat [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, 14300 (Malaysia); Zaidi, Saleem H. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia)

2015-12-01

Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert{sup ®} software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H{sub 2}O{sub 2}), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H{sub 2}O{sub 2} concentration and etching time. The predicted model is in good agreement with the experimental data where R{sup 2} is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant

Theory and Monte-Carlo simulation of adsorbates on corrugated surfaces

DEFF Research Database (Denmark)

Vives, E.; Lindgård, P.-A.

1993-01-01

-phase between the commensurate and incommensurate phase stabilized by defects. Special attention has been given to the study of the epitaxial rotation angles of the different phases. Available experimental data is in agreement with the simulations and with a general theory for the epitaxial rotation which takes......Phase transitions in systems of adsorbed molecules on corrugated surfaces are studied by means of Monte Carlo simulation. Particularly, we have studied the phase diagram of D2 on graphite as a function of coverage and temperature. We have demonstrated the existence of an intermediate gamma...

Spoof surface plasmons propagating along a periodically corrugated coaxial waveguide

International Nuclear Information System (INIS)

Talebi, Nahid; Shahabadi, Mahmoud

2010-01-01

Using the rigorous mode-matching technique, we have investigated a periodically corrugated perfectly conducting coaxial waveguide for the possibility of propagation of localized spoof surface plasmons. To verify our results, the computed band diagram of the structure has been compared with the one obtained using the body-of-revolution finite-difference time-domain method. The obtained spoof surface plasmon modes have been shown to be highly localized and slowly propagating. Variations of the obtained modal frequencies and mode profiles as a function of the depth and width of the grooves have also been investigated.

Spoof surface plasmons propagating along a periodically corrugated coaxial waveguide

Energy Technology Data Exchange (ETDEWEB)

Talebi, Nahid; Shahabadi, Mahmoud, E-mail: n.talebi@ece.ut.ac.i [Photonics Research Laboratory, Center of Excellence for Applied Electromagnetic Systems, School of Electrical and Computer Engineering, University of Tehran, North Kargar Ave., Tehran (Iran, Islamic Republic of)

2010-04-07

Using the rigorous mode-matching technique, we have investigated a periodically corrugated perfectly conducting coaxial waveguide for the possibility of propagation of localized spoof surface plasmons. To verify our results, the computed band diagram of the structure has been compared with the one obtained using the body-of-revolution finite-difference time-domain method. The obtained spoof surface plasmon modes have been shown to be highly localized and slowly propagating. Variations of the obtained modal frequencies and mode profiles as a function of the depth and width of the grooves have also been investigated.

KEMAMPUAN GENTENG PLASTIK BERGELOMBANG (CORRUGATED PLASTIC SEBAGAI BIOFILTER PARTIKEL AMONIAK DAN BAHAN ORGANIK DI MEDIA BUDIDAYA DAN LIMBAH CAIR BUDIDAYA IKAN (Performance of Corrugated Plastic as Biofilter of Ammonia Particle and Organic Material

Directory of Open Access Journals (Sweden)

Muslim Muslim

2010-07-01

Full Text Available ABSTRAK Pertumbuhan budidaya ikan dalam beberapa dekade ini berkembang sangat pesat, hal ini karena permintaan akan ikan meningkat. Meningkatnya kegiatan budidaya ikan selalu diiringi dengan meningkatnya limbah yang dihasilkan. Hal ini akan sangat cepat berpengaruh bila sistem budidaya yang dipakai adalah semi intesif atau intensif. Limbah tersebut harus segera dihilangkan atau dikurangi, karena akan berdampak pada ikan yang dibudidaya dan lingkungan seperti sungai dan laut. Tujuan penelitian ini adalah ingin mengetahui kemampuan genteng plastik bergelombang mengurangi limbah yang dihasilkan budidaya ikan yaitu Total Suspended Sediment (TSS, Suspended Sediment (SS, amoniak dan bahan organik (COD. Dari hasil penelitian diperoleh bahwa air limbah budidaya ikan yang mengandung TSS, SS, amoniak dan bahan organik setelah dilewatkan dengan genteng plastik bergelombang konsentrasinya menurun dengan tingkat efisiensi pengurangan yang terjadi di dalam kolam ikan dan di luar kolam ikan adalah sebagai berikut: 74,51% dan 54,42% (TSS; 39,20% dan 49,12% (SS; 19,82% dan 14,2% (amoniak; dan 24,82% dan 22,47% (COD. Ternyata genteng plastik bergelombang mempunyai tingkat pengurangan (g/m3/hr dan tingkat pengurangan spesifik (mg/m2/hr terhadap kandungan amoniak lebih efektif bila dibandingkan dengan material lain seperti plastic rolls, scrub pads, pipa PVC dan lain sebagainya.   ABSTRACT Aquaculture has been developing rapidly during the last few decades; it is due to the increase of fish demand. Increasing aquaculture activities especially with semi-intensive and intensive system have significant effect on waste production, which has to be removed or to be reduced quickly because will effect on fish in rearing tank and environment when through away to environment such as river and sea. The objectives of this study were to know the capability of corrugated plastic to remove or to reduce wastes content produced by aquaculture activities, i.e, Total Suspended

3D memory: etch is the new litho

Science.gov (United States)

Petti, Christopher

2018-03-01

This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

International Nuclear Information System (INIS)

Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

1999-01-01

The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

Squeezing Molecularly thin Lubricant Films between curved Corrugated Surfaces with long range Elasticity

DEFF Research Database (Denmark)

Sivebæk, Ion Marius; Samoilov, Vladimir N.; Persson, Bo N. J.

2010-01-01

3H8, C4H10, C8H18, C9H20, C10H22, C14H30 and C16H34, confined between corrugated gold surfaces. Well defined molecular layers develop in the lubricant film when the width is of the order of a few atomic diameters. An external squeezing pressure induces discontinuous, thermally activated changes...

Si etching with reactive neutral beams of very low energy

Energy Technology Data Exchange (ETDEWEB)

Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

2014-12-14

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

International Nuclear Information System (INIS)

Joo, Young-Hee; Kim, Chang-Il

2015-01-01

We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF 4 /Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF 4 /Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF 4 /Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF 4 /Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar + sputtering and then reacted with the C-F x radicals. • The physical sputtering is dominant in etch control compared with chemical etching

Rapid prototyping of 2D glass microfluidic devices based on femtosecond laser assisted selective etching process

Science.gov (United States)

Kim, Sung-Il; Kim, Jeongtae; Koo, Chiwan; Joung, Yeun-Ho; Choi, Jiyeon

2018-02-01

Microfluidics technology which deals with small liquid samples and reagents within micro-scale channels has been widely applied in various aspects of biological, chemical, and life-scientific research. For fabricating microfluidic devices, a silicon-based polymer, PDMS (Polydimethylsiloxane), is widely used in soft lithography, but it has several drawbacks for microfluidic applications. Glass has many advantages over PDMS due to its excellent optical, chemical, and mechanical properties. However, difficulties in fabrication of glass microfluidic devices that requires multiple skilled steps such as MEMS technology taking several hours to days, impedes broad application of glass based devices. Here, we demonstrate a rapid and optical prototyping of a glass microfluidic device by using femtosecond laser assisted selective etching (LASE) and femtosecond laser welding. A microfluidic droplet generator was fabricated as a demonstration of a microfluidic device using our proposed prototyping. The fabrication time of a single glass chip containing few centimeter long and complex-shaped microfluidic channels was drastically reduced in an hour with the proposed laser based rapid and simple glass micromachining and hermetic packaging technique.

Uses of four-fold coaxial corrugated piping in low temperature technology

Energy Technology Data Exchange (ETDEWEB)

Beck, A; Rohner, P [Kabel- und Metallwerke Gutehoffnungshuette A.G., Hannover (Germany, F.R.)

1978-06-01

The increasing uses of superconducting equipment in various areas of research and technology, including even medicine, create an increasing demand for suitable transfer lines for liquid helium which still remains practically the only suitable coolant. This paper reports on flexible four-fold coaxial corrugated piping lines which can combine a forword flow and a return flow channel for the coolant and which can be designed for various operating conditions. The mechanical and thermal properties of such piping lines are discussed.

Plasma/Neutral-Beam Etching Apparatus

Science.gov (United States)

Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

1989-01-01

Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

Highly selective and sensitive paper-based colorimetric sensor using thiosulfate catalytic etching of silver nanoplates for trace determination of copper ions.

Science.gov (United States)

Chaiyo, Sudkate; Siangproh, Weena; Apilux, Amara; Chailapakul, Orawon

2015-03-25

A novel, highly selective and sensitive paper-based colorimetric sensor for trace determination of copper (Cu(2+)) ions was developed. The measurement is based on the catalytic etching of silver nanoplates (AgNPls) by thiosulfate (S2O3(2-)). Upon the addition of Cu(2+) to the ammonium buffer at pH 11, the absorption peak intensity of AuNPls/S2O3(2-) at 522 nm decreased and the pinkish violet AuNPls became clear in color as visible to the naked eye. This assay provides highly sensitive and selective detection of Cu(2+) over other metal ions (K(+), Cr(3+), Cd(2+), Zn(2+), As(3+), Mn(2+), Co(2+), Pb(2+), Al(3+), Ni(2+), Fe(3+), Mg(2+), Hg(2+) and Bi(3+)). A paper-based colorimetric sensor was then developed for the simple and rapid determination of Cu(2+) using the catalytic etching of AgNPls. Under optimized conditions, the modified AgNPls coated at the test zone of the devices immediately changes in color in the presence of Cu(2+). The limit of detection (LOD) was found to be 1.0 ng mL(-1) by visual detection. For semi-quantitative measurement with image processing, the method detected Cu(2+) in the range of 0.5-200 ng mL(-1)(R(2)=0.9974) with an LOD of 0.3 ng mL(-1). The proposed method was successfully applied to detect Cu(2+) in the wide range of real samples including water, food, and blood. The results were in good agreement according to a paired t-test with results from inductively coupled plasma-optical emission spectrometry (ICP-OES). Copyright © 2015. Published by Elsevier B.V.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

International Nuclear Information System (INIS)

Altamore, C; Tringali, C; Sparta', N; Marco, S Di; Grasso, A; Ravesi, S

2010-01-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10 5 ) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10 1 Hz to 10 6 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl 2 /Ar chemistry. The relationship between the etch rate and the Cl 2 /Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl 2 /Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

Energy Technology Data Exchange (ETDEWEB)

Altamore, C; Tringali, C; Sparta' , N; Marco, S Di; Grasso, A; Ravesi, S [STMicroelectronics, Industial and Multi-segment Sector R and D, Catania (Italy)

2010-02-15

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10{sup 5}) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10{sup 1} Hz to 10{sup 6} Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl{sub 2}/Ar chemistry. The relationship between the etch rate and the Cl{sub 2}/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl{sub 2}/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Corrugation of Phase-Separated Lipid Bilayers Supported by Nanoporous Silica Xerogel Surfaces

Energy Technology Data Exchange (ETDEWEB)

Goksu, E I; Nellis, B A; Lin, W; Satcher Jr., J H; Groves, J T; Risbud, S H; Longo, M L

2008-10-30

Lipid bilayers supported by substrates with nanometer-scale surface corrugations holds interest in understanding both nanoparticle-membrane interactions and the challenges of constructing models of cell membranes on surfaces with desirable properties, e.g. porosity. Here, we successfully form a two-phase (gel-fluid) lipid bilayer supported by nanoporous silica xerogel. Surface topology, diffusion, and lipid density in comparison to mica-supported lipid bilayers were characterized by AFM, FRAP, FCS, and quantitative fluorescence microscopy, respectively. We found that the two-phase lipid bilayer follows the xerogel surface contours. The corrugation imparted on the lipid bilayer results in a lipid density that is twice that on a flat mica surface. In direct agreement with the doubling of actual bilayer area in a projected area, we find that the lateral diffusion coefficient (D) of lipids on xerogel ({approx}1.7 {micro}m{sup 2}/s) is predictably lower than on mica ({approx}4.1 {micro}m{sup 2}/s) by both FRAP and FCS techniques. Furthermore, the gel-phase domains on xerogel compared to mica were larger and less numerous. Overall, our results suggest the presence of a relatively defect-free continuous two-phase bilayer that penetrates approximately midway into the first layer of {approx}50 nm xerogel beads.

Performance of a new one-step multi-mode adhesive on etched vs non-etched enamel on bond strength and interfacial morphology.

Science.gov (United States)

de Goes, Mario Fernando; Shinohara, Mirela Sanae; Freitas, Marcela Santiago

2014-06-01

To compare microtensile bond strength (μTBS) and interfacial morphology of a new one-step multimode adhesive with a two-step self-etching adhesive and two etch-and-rinse adhesives systems on enamel. Thirty human third molars were sectioned to obtain two enamel fragments. For μTBS, 48 enamel surfaces were ground using 600-grit SiC paper and randomly assigned into 6 groups (n = 8): nonetched Scotchbond Universal [SBU]; etched SBU [SBU-et]; non-etched Clearfil SE Bond [CSE]; etched CSE [CSE-et]; Scotchbond Multi-PURPOSE [SBMP]; Excite [EX]. The etched specimens were conditioned with 37% phosphoric acid for 30 s, each adhesive system was applied according to manufacturers' instructions, and composite resin blocks (Filtek Supreme Plus, 3M ESPE) were incrementally built up. Specimens were sectioned into beams with a cross-sectional area of 0.8-mm2 and tested under tension (1 mm/min). The data were analyzed with oneway ANOVA and Fisher's PLSD (α = 0.05). For interface analysis, two samples from each group were embedded in epoxy resin, polished, and then observed using scanning electron microscopy (SEM). The μTBS values (in MPa) and the standard deviations were: SBU = 27.4 (8.5); SBU-et = 33.6 (9.3); CSE = 28.5 (8.3); CSE-et = 34.2 (9.0); SBMP = 30.4 (11.0); EX = 23.3 (8.2). CSE-et and SBU-et presented the highest bond strength values, followed by SBMP, CSE, and SBU which did not differ significantly from each other. EX showed the statistically significantly lowest bond strength values. SEM images of interfaces from etched samples showed long adhesive-resin tags penetrating into demineralized enamel. Preliminary etching of enamel significantly increased bond strength for the new one-step multimode adhesive SBU and two-step self-etching adhesive CSE.

Studies of the confinement at laser-induced backside dry etching using infrared nanosecond laser pulses

Science.gov (United States)

Ehrhardt, M.; Lorenz, P.; Bayer, L.; Han, B.; Zimmer, K.

2018-01-01

In the present study, laser-induced backside etching of SiO2 at an interface to an organic material using laser pulses with a wavelength of λ = 1064 nm and a pulse length of τ = 7 ns have been performed in order to investigate selected processes involved in etching of the SiO2 at confined ablation conditions with wavelengths well below the band gap of SiO2. Therefore, in between the utilized metallic absorber layer and the SiO2 surface, a polymer interlayer with a thickness between 20 nm to 150 nm was placed with the aim, to separate the laser absorption process in the metallic absorber layer from the etching process of the SiO2 surface due to the provided organic interlayer. The influence of the confinement of the backside etching process was analyzed by the deposition of different thick polymer layers on top of the metallic absorber layer. In particular, it was found that the SiO2 etching depth decreases with higher polymer interlayer thickness. However, the etching depth increases with increasing the confinement layer thickness. SEM images of the laser processed areas show that the absorber and confinement layers are ruptured from the sample surface without showing melting, and suggesting a lift off process of these films. The driving force for the layers lift off and the etching of the SiO2 is probably the generated laser-induce plasma from the confined ablation that provides the pressure for lift off, the high temperatures and reactive organic species that can chemically attack the SiO2 surface at these conditions.

Effects of etching time on enamel bond strengths.

Science.gov (United States)

Triolo, P T; Swift, E J; Mudgil, A; Levine, A

1993-12-01

This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

High-Density Plasma-Induced Etch Damage of GaN

International Nuclear Information System (INIS)

Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

1999-01-01

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

Particle precipitation in connection with KOH etching of silicon

DEFF Research Database (Denmark)

Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

2004-01-01

This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...... not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms...

The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

International Nuclear Information System (INIS)

Sievilae, Paeivi; Chekurov, Nikolai; Tittonen, Ilkka

2010-01-01

Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10 13 ions cm -2 has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines μm -1 .

Influence of water storage on fatigue strength of self-etch adhesives.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2015-12-01

The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

Energy Technology Data Exchange (ETDEWEB)

Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.; Rastogi, Vinayak [TEL Technology Center, America LLC, 255 Fuller Road, Suite 214, Albany, New York 12203 (United States); Koshiishi, Akira [Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi, 9813629 (Japan); Ventzek, Peter L. G. [Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741 (United States)

2016-05-15

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

Features of copper etching in chlorine-argon plasma

International Nuclear Information System (INIS)

Efremov, A.M.; Svettsov, V.I.

1995-01-01

Chlorine mixtures with inert gases including argon exhibit promise as plasma feed gases for etching metals and semiconductors in the microelectronics industry. It was shown that even strong dilution of reactive gas with an inert gas (up to 80-90% of the latter) has virtually no effect in decreasing the rate of plasma etching of materials such as silicon and gallium arsenide, compared to etching in pure chlorine. The principal reactive species responsible for etching these substrates are chlorine atoms therefore, a possible explanation of the effect is an increase in the rate of bulk generation of chlorine atoms in the presence of argon. In this work the authors studied the influence of argon on the rate of copper etching in chlorine, because copper, unlike the above substrates, reacts effectively not only with the atoms but with the ground-state molecules of chlorine

Neutron dosimetry using electrochemical etching

International Nuclear Information System (INIS)

Su, S.J.; Stillwagon, G.B.; Morgan, K.Z.

1977-01-01

Registration of α-tracks and fast-neutron-induced recoils tracks by the electrochemical etching technique as applied to sensitive polymer foils (e.g., polycarbonate) provides a simple, sensitive and inexpensive means of fast neutron personnel dosimetry as well as a valuable research tool for microdosimetry. When tracks were amplified by our electrochemical technique and the etching results compared with conventional etching technique a striking difference was noted. The electrochemically etched tracks were of much larger diameter (approx. 100 μm) and gave superior contrast. Two optical devices--the transparency projector and microfiche reader--were adapted to facilitate counting of the tracks appearing on our polycarbonate foils. The projector produced a magnification of 14X for a screen to projector distance of 5.0 meter and read's magnification was 50X. A Poisson distribution was determined for the number of tracks located in a particular area of the foil and experimentally verified by random counting of quarter sections of the microfiche reader screen. Finally, in an effort to determine dose equivalent (rem), a conversion factor is being determined by finding the sensitivity response (tracks/neutron) of recoil particle induced tracks as a function of monoenergetic fast neutrons and comparing results with those obtained by others

Electronegativity-dependent tin etching from thin films

Energy Technology Data Exchange (ETDEWEB)

Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

2016-07-15

The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

In vitro evaluation of microleakage around orthodontic brackets using laser etching and Acid etching methods.

Directory of Open Access Journals (Sweden)

Mohammad Hossein Toodehzaeim

2014-06-01

Full Text Available path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques.The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1, laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2, and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3. After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test.For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups.According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding.

Influence of copper foil polycrystalline structure on graphene anisotropic etching

Energy Technology Data Exchange (ETDEWEB)

Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2017-01-30

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Influence of copper foil polycrystalline structure on graphene anisotropic etching

International Nuclear Information System (INIS)

Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

2017-01-01

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Fabrication of Capacitive Micromachined Ultrasonic Transducers Using a Boron Etch-Stop Method

DEFF Research Database (Denmark)

Diederichsen, Søren Elmin; Sandborg-Olsen, Filip; Engholm, Mathias

2016-01-01

wt% potassium hydroxide solution with isopropyl alcohol added to increase the etch selectivity to the highly doped boron layer. The resulting plate thickness uniformity is estimated from scanning electron micrographs to a mean value of 2.00μm±2.5%. The resonant frequency in air for a 1-D linear CMUT...

Photonic jet μ-etching: from static to dynamic process

Science.gov (United States)

Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

2017-05-01

Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

In Vitro Evaluation of Shear Bond Strength of Self Etching Primers to Dentin

Directory of Open Access Journals (Sweden)

Reena Vora

2012-01-01

Full Text Available Objectives: To evaluate and compare the shear bond strength of four self etching primer adhesives to dentin. Materials & Methods: A total of 75 extracted human maxillary and mandibular molars were selected for the study. The teeth were divided into 5 groups of 15 teeth each, Group A- AdheSE (Ivoclar Vivadent, Group B-Adper prompt (3M ESPE, Group C- i bond (Heraeus-Kulzer, Group D-XenoIII (Dentsply, De Trey Group E-Single bond (3M ESPE was used and served as control. All the adhesives were applied according to the manufacturer′s instructions. Composite post was built on these bonded surfaces using Z-100 hybrid composite. The teeth were subjected to thermocycling for 500 cycles between 5°C to 55°C. The teeth were then mounted on universal testing machine and fractured under a shearing load, applied at a speed of 0.2mm/min. The readings were noted, tabulated and shear bond strength calculated in Mega Pascal (Mpa units. Results: There was significant difference in the mean shear bond strength of the four self etching primers, adhesives tested. Shear strength values were in the range of 16.57 to 21.73 Mpa. Xeno III gave the highest mean of shear bond strength whereas Adhe SE showed the lowest value of shear strength. Conclusion: Based on the results of the study, it can be concluded that contemporary self etching primer adhesives bond successfully to dentin. Moreover the bonding ability of Self Etching Systems seems to be comparable to the conventional Total Etch Systems.

Etching of enamel for direct bonding with a thulium fiber laser

Science.gov (United States)

Kabaş Sarp, Ayşe S.; Gülsoy, Murat

2011-03-01

Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

Characteristics of SiO{sub 2} etching with a C{sub 4}F{sub 8}/Ar/CHF{sub 3}/O{sub 2} gas mixture in 60-MHz/2-MHz dual-frequency capacitively coupled plasmas

Energy Technology Data Exchange (ETDEWEB)

Jeon, M. H.; Kang, S. K.; Park, J. Y.; Yeom, G. Y. [Sungkyunkwan University, Suwon (Korea, Republic of)

2011-11-15

Nanoscale SiO{sub 2} contact holes were etched by using C{sub 4}F{sub 8}/CHF{sub 3}/O{sub 2}/Ar gas mixtures in dual frequency capacitively coupled plasmas (DF-CCPs) where a 60-MHz source power was applied to the top electrode while a 2-MHz bias power was applied to the bottom electrode. The initial increase in the CHF{sub 3} gas flow rate at a fixed CHF{sub 3}+O{sub 2} flow rate increased the SiO{sub 2} etch rate as well as SiO{sub 2} etch selectivity over that of the amorphous carbon layer (ACL). When the high-frequency (HF) power was increased both SiO{sub 2} etch rate and the etch selectivity over ACL were increased. For a 300 W/500 W power ratio of 60-MHz HF power/ 2-MHz low-freqeuncy (LF) and a gas mixture of Ar (140 sccm) /C{sub 4}F{sub 8} (30 sccm) /CHF{sub 3} (25 sccm) /O{sub 2} (5 sccm) while maintaining 20 mTorr, an anisotropic etch profile with an SiO{sub 2} etch rate of 3350 A/min and an etch selectivity of higher than 6 over ACL could be obtained.

High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF{sub 4}/Ar plasma

Energy Technology Data Exchange (ETDEWEB)

Joo, Young-Hee; Kim, Chang-Il

2015-05-29

We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF{sub 4}/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF{sub 4}/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF{sub 4}/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF{sub 4}/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar{sup +} sputtering and then reacted with the C-F{sub x} radicals. • The physical sputtering is dominant in etch control compared with chemical etching.

High-power corrugates waveguide components for mm-wave fusion heating systems

International Nuclear Information System (INIS)

Olstad, R.A.; Doane, J.L.; Moeller, C.P.; O'Neill, R.C.; Di Martino, M.

1996-10-01

Considerable progress has been made over the last year in the U.S., Japan, Russia, and Europe in developing high power long pulse gyrotrons for fusion plasma heating and current drive. These advanced gyrotrons typically operate at a frequency in the range 82 GHz to 170 GHz at nearly megawatt power levels for pulse lengths up to 5 s. To take advantage of these new microwave sources for fusion research, new and improved transmission line components are needed to reliably transmit microwave power to plasmas with minimal losses. Over the last year, General Atomics and collaborating companies (Spinner GmbH in Europe and Toshiba Corporation in Japan) have developed a wide variety of new components which meet the demanding power, pulse length, frequency, and vacuum requirements for effective utilization of the new generation of gyrotrons. These components include low-loss straight corrugated waveguides, miter bends, miter bend polarizers, power monitors, waveguide bellows, de breaks, waveguide switches, dummy loads, and distributed windows. These components have been developed with several different waveguide diameters (32, 64, and 89 mm) and frequency ranges (82 GHz to 170 GHz). This paper describes the design requirements of selected components and their calculated and measured performance characteristics

Multiple-height microstructure fabricated by deep reactive ion etching and soft resist masks combined with UV curing

International Nuclear Information System (INIS)

Sato, R; Sawada, T; Kumagai, S; Sasaki, M

2014-01-01

Multiple-height microstructures are realized by deep reactive ion etching and UV-cured photoresist used in the embedded mask process. Although the UV-cured photoresist is a soft mask, its material property becomes stable against resist thinner and UV exposure. A layered resist pattern can be realized by stacking normal photoresist on the UV-cured photoresist. The normal photoresist can be selectively removed by the flush exposure and developing after the first Si etching. This technique is applied to two MEMS devices

Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates

International Nuclear Information System (INIS)

Lee, Chi-Yuan; Chang, Chienliu; Shih, Wen-Pin; Dai, Ching-Liang

2010-01-01

The wet etch process for amorphous indium gallium zinc oxide (a-IGZO or a-InGaZnO) by using various etchants is reported. The etch rates of a-IGZO, compared to another indium-based oxides including indium gallium oxide (IGO), indium zinc oxide (IZO), and indium tin oxide (ITO), are measured by using acetic acid, citric acid, hydrochloric acid, perchloric acid, and aqua ammonia as etchants, respectively. In our experimental results, the etch rate of the transparent oxide semiconductor (TOS) films by using acid solutions ranked accordingly from high to low are IZO, IGZO, IGO and ITO. Comparatively, the etch rate of the TOS films by using alkaline ammonia solution ranked from high to low are IGZO, IZO, IGO and ITO, in that order. Using the proposed wet etching process with high etch selectivity, bottom-gate-type thin-film transistors (TFTs) based on a-IGZO channels and Y 2 O 3 gate-insulators were fabricated by radio-frequency sputtering on plastic substrates. The wet etch processed TFT with 30 μm gate length and 120 μm gate width exhibits a saturation mobility of 46.25 cm 2 V -1 s -1 , a threshold voltage of 1.3 V, a drain current on-off ratio > 10 6 , and subthreshold gate voltage swing of 0.29 V decade -1 . The performance of the TFTs ensures the applicability of the wet etching process for IGZO to electronic devices on organic polymer substrates.

Development and application of the electrochemical etching technique. Annual progress report

International Nuclear Information System (INIS)

1979-08-01

This report documents advances in the development and application of the electrochemical etching technique for thermal and epithermal neutron dosimetry as well as track geometry determinations. The bulk and track etching rates were studied by evaluating the track geometry during electrochemical etching. The foil surface removed versus etching time for two different etchants at 1000 V, 2 kHz, and 22 0 C were studied. Results indicated that the bulk etching rates were constant for the two etchants, i.e. 45% KOH and 45% KOH mixed with an equal volume of C 2 H 5 OH 5 and were equal to 0.20 +- 0.14 μm/hr and 2.7 +- 0.27 μm/hr from each side of the foil. The track etching rate (as contrasted with the bulk etching rate) can be determined by the microscope focus at various depths. The increase of track depth values as a function of etching time for the two etchants are plotted. The track cone angles were determined and found to be much larger for electrochemically etched polycarbonate foils than for most plastics etched with passive chemical techniques

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching(SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition,etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000?C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Optical-fiber strain sensors with asymmetric etched structures.

Science.gov (United States)

Vaziri, M; Chen, C L

1993-11-01

Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

Effects of mask imperfections on InP etching profiles

International Nuclear Information System (INIS)

Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

1990-01-01

The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

International Nuclear Information System (INIS)

Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

2005-01-01

This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0001) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along - and -directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the -direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the -direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified

Thermal-Hydraulic Performance of a Corrugated Cooling Fin with Louvered Surfaces

DEFF Research Database (Denmark)

Sønderby, Simon Kaltoft; Hosseini, Seyed Mojtaba Mir; Rezaniakolaei, Alireza

2017-01-01

The main objective of the article is to investigate thermal-hydraulic performance of a corrugated cooling fin with louvered surfaces. The investigation is carried out using the fin geometry of one most commonly used liquid-to-air heat exchangers. The investigation was carried out by numerically...... simulating the airflow with louvered fin geometry. The simulation model was verified by comparing simulated j- and f-factors with the corresponding values of several experimental correlations. The j-factors deviated less than 10.7 % from two of the experimental correlations, whereas deviations ranging...

Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

Science.gov (United States)

Zakour, Sihem Ben; Taleb, Hassen

2017-09-01

Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

Science.gov (United States)

Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu

2017-05-01

The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for normally off operation. The PREC process is based on photo-assisted electrochemical etching using low-energy chemical reactions. The fundamental photo-electrochemical measurements on AlGaN/GaN heterostructures revealed that the photo-carriers generated in the top AlGaN layer caused homogeneous etching of AlGaN with a smooth surface, but those generated in the GaN layer underneath caused inhomogeneous etching that roughens the surface. The concept of the PREC process is to supply the photo-carriers generated only in the AlGaN layer by selecting proper conditions on light wavelength and voltage. The phenomenon of self-termination etching has been observed during the PREC process, where the etching depth was controlled by light intensity. The recessed-gate AlGaN/GaN HEMT fabricated with the PREC process showed positive threshold voltage and improvement in transconductance compared to planar-gate AlGaN/GaN HEMTs.

Optical ridge waveguides preserving the thermo-optic features in LiNbO3 crystals fabricated by combination of proton implantation and selective wet etching.

Science.gov (United States)

Tan, Yang; Chen, Feng

2010-05-24

We report on a new, simple method to fabricate optical ridge waveguides in a z-cut LiNbO3 wafer by using proton implantation and selective wet etching. The measured modal field is well confined in the ridge waveguide region, which is also confirmed by the numerical simulation. With thermal annealing treatment at 400 degrees C, the propagation loss of the ridge waveguides is determined to be as low as approximately 0.9 dB/cm. In addition, the measured thermo-optic coefficients of the waveguides are in good agreement with those of the bulk, suggesting potential applications in integrated photonics.

Etching patterns on the micro‐ and nanoscale

DEFF Research Database (Denmark)

Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

2014-01-01

‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

Energy Technology Data Exchange (ETDEWEB)

Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)