Selective epitaxial growth properties and strain characterization of Si1- x Ge x in SiO2 trench arrays

Science.gov (United States)

Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

2017-04-01

In this study, we investigated the formation of a Si1- x Ge x fin structure in SiO2 trench arrays via an ultra-high-vacuum chemical-vapor deposition (UHV-CVD) selective epitaxial growth (SEG) process. Defect generation and microstructures of Si1- x Ge x fin structures with different Ge concentrations ( x = 0.2, 0.3 and 0.45) were examined. In addition, the strain evolution of a Si1- x Ge x fin structure was analyzed by using reciprocal space mapping (RSM). An (111) facet was formed from the Si1- x Ge x epi-layer and SiO2 trench wall interface to minimize the interface and the surface energy. The Si1- x Ge x fin structures were fully relaxed along the direction perpendicular to the trenches regardless of the Ge concentration. On the other hand, the fin structures were fully or partially strained along the direction parallel to the trenches depending on the Ge concentration: fully strained Si0.8Ge0.2 and Si0.7Ge0.3, and a Si0.55Ge0.45 strain-relaxed buffer. We further confirmed that the strain on the Si1- x Ge x fin structures remained stable after oxide removal and H2/N2 post-annealing.

Surface-site-selective study of valence electronic structures of clean Si(100)-2x1 using Si-L23VV Auger electron-Si-2p photoelectron coincidence spectroscopy

International Nuclear Information System (INIS)

Kakiuchi, Takuhiro; Nagaoka, Shinichi; Hashimoto, Shogo; Fujita, Narihiko; Tanaka, Masatoshi; Mase, Kazuhiko

2010-01-01

Valence electronic structures of a clean Si(100)-2x1 surface are investigated in a surface-site-selective way using Si-L 23 VV Auger electron-Si-2p photoelectron coincidence spectroscopy. The Si-L 23 VV Auger electron spectra measured in coincidence with Si-2p photoelectrons emitted from the Si up-atoms or Si 2nd-layer of Si(100)-2x1 suggest that the position where the highest density of valence electronic states located in the vicinity of the Si up-atoms is shifted by 0.8 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. Furthermore, the valence band maximum in the vicinity of the Si up-atoms is indicated to be shifted by 0.1 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. These results are direct evidence of the transfer of negative charge from the Si 2nd-layer to the Si up-atoms. (author)

Determination of the refractive index of n+- and p-type porous Si samples

International Nuclear Information System (INIS)

Setzu, S.; Romestain, R.; Chamard, V.

2004-01-01

Photochemical etching of porous Si layers has been shown to be able to create micrometer or submicrometer-scale lateral gratings very promising for photonic applications. However, the reduced size of this lateral periodicity hinders standard measurements of refractive index variations. Therefore accurate characterizations of such gratings are usually difficult. In this paper we address this problem by reproducing on a larger scale (millimeter) the micrometer scale light-induced refractive index variations associated to the lateral periodicity. Using this procedure we perform standard X-ray and optical reflectivity measurements on our samples. One can then proceed to the determination of light-induced variations of porosity and refractive index. We present results for p-type samples, where the photo-dissolution can only be realized after the formation of the porous layer, as well as for n + -type samples, where light action can only be effective during the formation of the porous layer

Observation of spin-selective tunneling in SiGe nanocrystals.

Science.gov (United States)

Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

2011-12-09

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

Promising SiC support for Pd catalyst in selective hydrogenation of acetylene to ethylene

Science.gov (United States)

Guo, Zhanglong; Liu, Yuefeng; Liu, Yan; Chu, Wei

2018-06-01

In this study, SiC supported Pd nanoparticles were found to be an efficient catalyst in acetylene selective hydrogenation reaction. The ethylene selectivity can be about 20% higher than that on Pd/TiO2 catalyst at the same acetylene conversion at 90%. Moreover, Pd/SiC catalyst showed a stable catalytic life at 65 °C with 80% ethylene selectivity. With the detailed characterization using temperature-programmed reduction (H2-TPR), powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), N2 adsorption/desorption analysis, CO-chemisorption and thermo-gravimetric analysis (TGA), it was found that SiC owns a lower surface area (22.9 m2/g) and a broad distribution of meso-/macro-porosity (from 5 to 65 nm), which enhanced the mass transfer during the chemical process at high reaction rate and decreased the residence time of ethylene on catalyst surface. Importantly, SiC support has the high thermal conductivity, which favored the rapid temperature homogenization through the catalyst bed and inhabited the over-hydrogenation of acetylene. The surface electronic density of Pd on Pd/SiC catalyst was higher than that on Pd/TiO2, which could promote desorption of ethylene from surface of the catalyst. TGA results confirmed a much less coke deposition on Pd/SiC catalyst.

A vállalkozási tevékenység regionális különbségei Magyarországon a regionális vállalkozási és fejlődési index alapján

OpenAIRE

Szerb, László; Komlósi, Éva; Ács J., Zoltán; Ortega-Argilés, Raquel

2014-01-01

Jelen tanulmányban a globális vállalkozási és fejlődési index módszertanának regionális szintre adaptálásával vizsgáljuk a hét magyar NUTS2 szintű régió vállalkozási teljesítményét. A komplex, nem a hagyományos vállalkozói aktivitáson alapuló regionális vállalkozási és fejlődési index funkciója a vállalkozási teljesítmények regionális különbségeiért felelős egyéni és külső környezettel összefüggő tényezők rendszerének feltárása. A vizsgálat az úgynevezett szűk keresztmetsze tért történő bünte...

Selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation.

Science.gov (United States)

Miao, Guang; Ye, Feiyan; Wu, Luoming; Ren, Xiaoling; Xiao, Jing; Li, Zhong; Wang, Haihui

2015-12-30

This study investigates selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation. The TiO2/SiO2 adsorbents were prepared and then characterized by N2 adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO2/SiO2 were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO2/0.7SiO2 adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO2 served as the photocatalytic sites for DBT oxidation, while SiO2 acted as the selective adsorption sites for the corresponding oxidized DBT using TiO2 as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO2/SiO2; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO2/SiO2 was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO2/0.7SiO2 adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions. Copyright © 2015 Elsevier B.V. All rights reserved.

Optical refractive index and static permittivity of mixed Zr-Si oxide thin films prepared by ion beam induced CVD

Energy Technology Data Exchange (ETDEWEB)

Ferrer, F.J. [Centro Nacional de Aceleradores, Av. Thomas A. Edison, 7, 41092 Sevilla (Spain)], E-mail: fjferrer@us.es; Frutos, F. [E.T.S. de Ingenieria Informatica, Avda. Reina Mercedes, s/n, 41012 Sevilla (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores, Av. Thomas A. Edison, 7, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R.; Yubero, F. [Insituto de Ciencia de Materiales de Sevilla, c/ Americo vespucio, no. 49, 41092 Sevilla (Spain)

2007-12-03

Mixed oxides Zr{sub x}Si{sub 1-x}O{sub 2} (0 < x < 1) thin films have been prepared at room temperature by decomposition of (CH{sub 3}CH{sub 2}O){sub 3}SiH and Zr[OC(CH{sub 3}){sub 3}]{sub 4} volatile precursors induced by mixtures of O{sub 2}{sup +} and Ar{sup +} ions. The films were flat and amorphous independently of the Si/Zr ratio and did not present phase segregation of the pure single oxides (SiO{sub 2} and ZrO{sub 2}). A 10-23 at.% of H and 1-5 at.% of C atoms remained incorporated in the films depending on the mixture ratio of the Si and Zr precursors and the composition of the bombarding gas used during the deposition process. These impurities are mainly forming hydroxyl and carboxylic groups. Optical refractive index and static permittivity of the films were determined by reflection NIR-Vis spectroscopy and C-V electrical characterization, respectively. It is found that the refractive index increases non-linearly from 1.45 to 2.10 as the Zr content in the thin films increases. The static permittivity also increases non-linearly from {approx} 4 for pure SiO{sub 2} to {approx} 15 for pure ZrO{sub 2}. Optical and electrical characteristics of the films are justified by their impurity content and the available theories.

Index Fund Selections with GAs and Classifications Based on Turnover

Science.gov (United States)

Orito, Yukiko; Motoyama, Takaaki; Yamazaki, Genji

It is well known that index fund selections are important for the risk hedge of investment in a stock market. The`selection’means that for`stock index futures’, n companies of all ones in the market are selected. For index fund selections, Orito et al.(6) proposed a method consisting of the following two steps : Step 1 is to select N companies in the market with a heuristic rule based on the coefficient of determination between the return rate of each company in the market and the increasing rate of the stock price index. Step 2 is to construct a group of n companies by applying genetic algorithms to the set of N companies. We note that the rule of Step 1 is not unique. The accuracy of the results using their method depends on the length of time data (price data) in the experiments. The main purpose of this paper is to introduce a more`effective rule’for Step 1. The rule is based on turnover. The method consisting of Step 1 based on turnover and Step 2 is examined with numerical experiments for the 1st Section of Tokyo Stock Exchange. The results show that with our method, it is possible to construct the more effective index fund than the results of Orito et al.(6). The accuracy of the results using our method depends little on the length of time data (turnover data). The method especially works well when the increasing rate of the stock price index over a period can be viewed as a linear time series data.

Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth

International Nuclear Information System (INIS)

Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.

2004-01-01

Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands

Selected mechanical properties of aluminum composite materials reinforced with SiC particles

Directory of Open Access Journals (Sweden)

A. Kurzawa

2008-07-01

Full Text Available This work presents the results of research concerning influence of ceramic particles’ content of silicon carbide on selected mechanical properties of type AW-AlCu4Mg2Mn - SiC composite materials. Composites produced of SiC particles with pressure infiltration method of porous preform and subject to hot plastic forming in the form of open die forging were investigated. The experimental samples contained from 5% up to 45% of reinforcing SiC particles of 8÷10μm diameter. Studies of strength properties demonstrated that the best results, in case of tensile strength as well as offset yield strength, might be obtained while applying reinforcement in the amount of 20-25% vol. of SiC. Application of higher than 25% vol. contents of reinforcing particles leads to gradual strength loss. The investigated composites were characterized by very high functional properties, such as hardness and abrasive wear resistance, whose values increase strongly with the increase of reinforcement amount. The presented results of the experiments shall allow for a more precise component selection of composite materials at the stage of planning and design of their properties.

Selective adsorption of thiophenic compounds from fuel over TiO{sub 2}/SiO{sub 2} under UV-irradiation

Energy Technology Data Exchange (ETDEWEB)

Miao, Guang [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China); Ye, Feiyan [Key Laboratory of Enhanced Heat Transfer and Energy Conservation of the Ministry of Education South China University of Technology, Guangzhou 510640 (China); Wu, Luoming; Ren, Xiaoling [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China); Xiao, Jing, E-mail: cejingxiao@scut.edu.cn [School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640 (China); Li, Zhong, E-mail: cezhli@scut.edu.cn [Key Laboratory of Enhanced Heat Transfer and Energy Conservation of the Ministry of Education South China University of Technology, Guangzhou 510640 (China); Wang, Haihui [Key Laboratory of Enhanced Heat Transfer and Energy Conservation of the Ministry of Education South China University of Technology, Guangzhou 510640 (China)

2015-12-30

Highlights: • TiO{sub 2}/SiO{sub 2} was developed for selective adsorption of DBTs under UV irradiation. • Remarkable adsorption uptake and selectivity were achieved for deep desulfurization. • Introduction of TiO{sub 2} into SiO{sub 2} enhanced its adsorption for DBTO{sub 2}. • Adsorption mechanism using TiO{sub 2}/SiO{sub 2} under UV irradiation was elucidated. - Abstract: This study investigates selective adsorption of thiophenic compounds from fuel over TiO{sub 2}/SiO{sub 2} under UV-irradiation. The TiO{sub 2}/SiO{sub 2} adsorbents were prepared and then characterized by N{sub 2} adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO{sub 2}/SiO{sub 2} were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO{sub 2}/0.7SiO{sub 2} adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO{sub 2} served as the photocatalytic sites for DBT oxidation, while SiO{sub 2} acted as the selective adsorption sites for the corresponding oxidized DBT using TiO{sub 2} as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO{sub 2}/SiO{sub 2}; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO{sub 2}/SiO{sub 2} was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO{sub 2}/0.7SiO{sub 2} adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions.

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

International Nuclear Information System (INIS)

Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

2007-01-01

The dependence of Si 3 N 4 etch rates and the etch selectivity of SiO 2 to Si 3 N 4 on ion-incident angles was studied for different bias voltages in a high-density C 4 F 8 plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si 3 N 4 etching, but it increased with the bias voltage in SiO 2 etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si 3 N 4 etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO 2 than for Si 3 N 4 and, consequently, the etch selectivity of SiO 2 to Si 3 N 4 decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO 2 had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF x ) film formed on the substrates

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

2016-03-04

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

Phase selection and microstructure in directional solidification of glass forming Pd-Si-Cu alloys

Science.gov (United States)

Huo, Yang

Phase selection and microstructure formation during the rapid solidification of alloy melts has been a topic of substantial interest over the last several decades, attributed mainly to the access to novel structures involving metastable crystalline and non-crystalline phases. In this work, Bridgeman type directional solidification was conducted in Pd-Si-Cu glass forming system to study such cooling rate dependent phase transition and microstructure formation. The equilibrium state for Pd-Si-Cu ternary system was investigated through three different works. First of all, phase stabilities for Pd-Si binary system was accessed with respects of first-principles and experiments, showing Pd5Si, Pd9Si2, Pd3Si and Pd 2Si phase are stable all way to zero Kevin while PdSi phase is a high temperature stable phase, and Pd2Si phase with Fe2P is a non-stoichiometry phase. A thermodynamic database was developed for Pd-Si system. Second, crystal structures for compounds with ternary compositions were studied by XRD, SEM and TEM, showing ordered and disordered B2/bcc phases are stable in Pd-rich part. At last, based on many phase equilibria and phase transitions data, a comprehensive thermodynamic discrption for Pd-Si-Cu ternary system was first time to be developed, from which different phase diagrams and driving force for kinetics can be calculated. Phase selection and microstructure formation in directional solidification of the best glass forming composition, Pd 77.5Si16.5Cu6, in this system with growth velocities from 0.005 to 7.5mm/s was systematically studied and the solidification pathways at different conditions were interpreted from thermodynamic simulation. The results show that for growth velocities are smaller than 0.1mm/s Pd 3Si phase is primary phase and Pd9Si2 phase is secondary phase, the difficulty for Pd9Si2 phase nucleation gives rise to the formation of two different eutectic structure. For growth velocities between 0.4 and 1mm/s, instead of Pd3Si phase, Pd9Si2

Selective Collection Quality Index for Municipal Solid Waste Management

Directory of Open Access Journals (Sweden)

Elena Cristina Rada

2018-01-01

Full Text Available Trentino (an Italian Province located in the northern part of the country is equipped with a management system of municipal solid waste collection at the forefront. Among the most positive aspects, there is a great ability for waste separation at the source and a consequent low production of residual municipal solid waste for disposal. Latest data show a gross efficiency of selective collection that has recently reached 80%, one of the highest values in Italy. This study analyzed the “Trentino system” to identify the main elements that have been at the base of the current efficient model. This provided an opportunity to propose a selective collection quality index (SCQI, including collection efficiency for each fraction, method of collection, quality of the collected materials, presence of the punctual tariff and tourist incidence. A period relevant for the transition of the collection system to the recent one was chosen for the demonstrative adoption of the proposed indicators in order to determine the potential of the index adoption. Results of the analysis of this case study were obtained in a quantitative form thanks to the sub-parameters that characterize the proposed index. This allowed selected collection decision makers to focus intently on a territory to find criticalities to be solved. For instance, the use of the index and its sub-indicators in the case of Trentino identified and comparatively quantified the local problems resulting from the presence of a large museum in a small town, tourism peaks in some valleys, and a delay in the punctual tariff adoption. The index has been proposed with the aim to make available an integrated tool to analyze other areas in Italy and abroad.

Breeding common bean populations for traits using selection index

Directory of Open Access Journals (Sweden)

Dayane Cristina Lima

2015-02-01

Full Text Available A common bean (Phaseolus vulgarisL. cultivar must combine desirable genotypes for several traits in order to be accepted by producers and consumers. This study aimed to evaluate selection efficiency when segregating bean populations for traits, by means of a selection index, in order to obtain superior progenies for traits considered. A total of 16 populations from the F4 and F5generations were evaluated in 2011 and 2012, respectively. The traits evaluated were plant architecture, plant disease, grain type and yield. Using standard scores (Z, the sum of the four traits (∑Z was obtained and, based on this information, the best populations were identified. The evaluation of selection effectiveness was performed on 31 progenies from each population. The 496 progenies plus eight controls were evaluated in the F5:6and F5:7 generations for the same traits in July and November 2012, respectively. The selection, using the index based on the sum of standardized variables (∑Z, was efficient for identifying populations with superior progenies for all the traits considered.

Genomic prediction for Nordic Red Cattle using one-step and selection index blending

DEFF Research Database (Denmark)

Guosheng, Su; Madsen, Per; Nielsen, Ulrik Sander

2012-01-01

This study investigated the accuracy of direct genomic breeding values (DGV) using a genomic BLUP model, genomic enhanced breeding values (GEBV) using a one-step blending approach, and GEBV using a selection index blending approach for 15 traits of Nordic Red Cattle. The data comprised 6,631 bulls...... genotyped and nongenotyped bulls for one-step blending, and to scale DGV and its expected reliability in the selection index blending. Weighting (scaling) factors had a small influence on reliabilities of GEBV, but a large influence on the variation of GEBV. Based on the validation analyses, averaged over...... the 15 traits, the reliability of DGV for bulls without daughter records was 11.0 percentage points higher than the reliability of conventional pedigree index. Further gain of 0.9 percentage points was achieved by combining information from conventional pedigree index using the selection index blending...

The modification of siRNA with 3' cholesterol to increase nuclease protection and suppression of native mRNA by select siRNA polyplexes.

Science.gov (United States)

Ambardekar, Vishakha V; Han, Huai-Yun; Varney, Michelle L; Vinogradov, Serguei V; Singh, Rakesh K; Vetro, Joseph A

2011-02-01

Polymer-siRNA complexes (siRNA polyplexes) are being actively developed to improve the therapeutic application of siRNA. A major limitation for many siRNA polyplexes, however, is insufficient mRNA suppression. Given that modifying the sense strand of siRNA with 3' cholesterol (chol-siRNA) increases the activity of free nuclease-resistant siRNA in vitro and in vivo, we hypothesized that complexation of chol-siRNA can increase mRNA suppression by siRNA polyplexes. In this study, the characteristics and siRNA activity of self assembled polyplexes formed with chol-siRNA or unmodified siRNA were compared using three types of conventional, positively charged polymers: (i) biodegradable, cross-linked nanogels (BDNG) (ii) graft copolymers (PEI-PEG), and (iii) linear block copolymers (PLL10-PEG, and PLL50-PEG). Chol-siRNA did not alter complex formation or the resistance of polyplexes to siRNA displacement by heparin but increased nuclease protection by BDNG, PLL10-PEG, and PLL50-PEG polyplexes over polyplexes with unmodified siRNA. Chol-CYPB siRNA increased suppression of native CYPB mRNA in mammary microvascular endothelial cells (MVEC) by BDNG polyplexes (35%) and PLL10-PEG polyplexes (69%) over comparable CYPB siRNA polyplexes but had no effect on PEI-PEG or PLL50-PEG polyplexes. Overall, these results indicate that complexation of chol-siRNA increases nuclease protection and mRNA suppression by select siRNA polyplexes. These results also suggest that polycationic block length is an important factor in increasing mRNA suppression by PLL-PEG chol-siRNA polyplexes in mammary MVEC. Copyright © 2010 Elsevier Ltd. All rights reserved.

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition

Science.gov (United States)

Washizu, Tomoya; Ike, Shinichi; Inuzuka, Yuki; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

2017-06-01

Selective epitaxial growth of Ge and Ge1-xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effects of growth temperature and total pressure during growth on the selectivity and the crystallinity of the Ge and Ge1-xSnx epitaxial layers. Under low total pressure growth conditions, the dominant mechanism of the selective growth of Ge epitaxial layers is the desorption of the Ge precursors. At a high total pressure case, it is needed to control the surface migration of precursors to realize the selectivity because the desorption of Ge precursors was suppressed. The selectivity of Ge growth was improved by diffusion of the Ge precursors on the SiO2 surfaces when patterned substrates were used at a high total pressure. The selective epitaxial growth of Ge1-xSnx layer was also realized using MOCVD. We found that the Sn precursors less likely to desorb from the SiO2 surfaces than the Ge precursors.

A novel core–shell nanocomposite Ni–Ca@mSiO_2 for benzophenone selective hydrogenation

International Nuclear Information System (INIS)

Han, Xue; Feng, Wenhui; Chu, Xiaoning; Chu, Hailong; Niu, Libo; Bai, Guoyi

2017-01-01

A novel core–shell nanocomposite Ni–Ca@mSiO_2 was first prepared by a modified Stöber method in this paper. It has a core–shell structure with Ni (about 8 nm in diameter) and Ca as the cores and mesoporous silica as the outer shell, as proven by the transmission electron microscopy. This nanocomposite exhibited good catalytic performance in the selective hydrogenation of benzophenone, with 96.1% conversion and 94.9% selectivity for benzhydrol under relatively mild reaction conditions. It was demonstrated that addition of small amounts of alkaline Ca can not only markedly improve the dispersion of the active species but also tune the acid–base property of this nanocomposite, resulting in the efficient suppression of benzhydrol dehydration to achieve a high selectivity. Furthermore, the core–shell nanocomposite Ni–Ca@mSiO_2 can be recycled four runs without appreciable loss of its initial activity, more stable than the traditional supported nanocatalyst Ni–Ca/mSiO_2. It was suggested that the outer mesoporous silica shell of Ni–Ca@mSiO_2 can prevent both the aggregation and the leaching of the active Ni species, accounting for its relatively good stability.

Growth and characterization of Ge nanostructures selectively grown on patterned Si

International Nuclear Information System (INIS)

Cheng, M.H.; Ni, W.X.; Luo, G.L.; Huang, S.C.; Chang, J.J.; Lee, C.Y.

2008-01-01

By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical ω/2θ scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process, all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming

Energy Technology Data Exchange (ETDEWEB)

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Large-area selective CVD epitaxial growth of Ge on Si substrates

NARCIS (Netherlands)

Sammak, A.; De Boer, W.; Nanver, L.K.

2011-01-01

Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal

The Modification of siRNA with 3′ Cholesterol to Increase Nuclease Protection and Suppression of Native mRNA by Select siRNA Polyplexes

Science.gov (United States)

Ambardekar, Vishakha V.; Han, Huai-Yun; Varney, Michelle L.; Vinogradov, Serguei V.; Singh, Rakesh K.; Vetro, Joseph A.

2010-01-01

Polymer-siRNA complexes (siRNA polyplexes) are being actively developed to improve the therapeutic application of siRNA. A major limitation for many siRNA polyplexes, however, is insufficient mRNA suppression. Given that modifying the sense strand of siRNA with 3′ cholesterol (chol-siRNA) increases the activity of free nuclease-resistant siRNA in vitro and in vivo, we hypothesized that complexation of chol-siRNA can increase mRNA suppression by siRNA polyplexes. In this study, the characteristics and siRNA activity of self assembled polyplexes formed with chol-siRNA or unmodified siRNA were compared using three types of conventional, positively charged polymers: (i) biodegradable, cross-linked nanogels (BDNG) (ii) graft copolymers (PEI-PEG), and (iii) linear block copolymers (PLL10-PEG, and PLL50-PEG). Chol-siRNA did not alter complex formation or the resistance of polyplexes to siRNA displacement by heparin but increased nuclease protection by BDNG, PLL10-PEG, and PLL50-PEG polyplexes over polyplexes with unmodified siRNA. Chol-CYPB siRNA increased suppression of native CYPB mRNA in mammary microvascular endothelial cells (MVEC) by BDNG polyplexes (35%) and PLL10-PEG polyplexes (69%) over comparable CYPB siRNA polyplexes but had no effect on PEI-PEG or PLL50-PEG polyplexes. Overall, these results indicate that complexation of chol-siRNA increases nuclease protection and mRNA suppression by select siRNA polyplexes. These results also suggest that polycationic block length is an important factor in increasing mRNA suppression by PLL-PEG chol-siRNA polyplexes in mammary MVEC. PMID:21047680

Influence of Annealing on Mechanical Properties of Al-20Si Processed by Selective Laser Melting

Directory of Open Access Journals (Sweden)

Pan Ma

2014-01-01

Full Text Available The microstructure and mechanical properties of Al-20Si produced by selective laser melting (SLM are investigated for different heat treatment conditions. As a result of the high cooling rate during processing, the as-built SLM material displays a microstructure consisting of a supersaturated Al(Si solid solution along with heavily refined eutectic Si and Si particles. The Si particles become coarser, and the eutectic Si gradually changes its morphology from fibrous to plate-like shape with increasing annealing temperature. The microstructural variations occurring during heat treatment significantly affect the mechanical behavior of the samples. The yield and ultimate strengths decrease from 374 and 506 MPa for the as-built SLM material to 162 and 252 MPa for the sample annealed at 673 K, whereas the ductility increases from 1.6 to 8.7%. This offers the possibility to tune microstructure and corresponding properties of the Al-20Si SLM parts to meet specific requirements.

Control configuration selection for bilinear systems via generalised Hankel interaction index array

DEFF Research Database (Denmark)

Shaker, Hamid Reza; Tahavori, Maryamsadat

2015-01-01

configuration selection. It is well known that a suitable control configuration selection is an important prerequisite for a successful industrial control. In this paper the problem of control configuration selection for multiple-input and multiple-output (MIMO) bilinear processes is addressed. First...... way, an iterative method for solving the generalised Sylvester equation is proposed. The generalised cross-gramian is used to form the generalised Hankel interaction index array. The generalised Hankel interaction index array is used for control configuration selection of MIMO bilinear processes. Most......Decentralised and partially decentralised control strategies are very popular in practice. To come up with a suitable decentralised or partially decentralised control structure, it is important to select the appropriate input and output pairs for control design. This procedure is called control...

SiC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION; F

International Nuclear Information System (INIS)

Paul K.T. Liu

2001-01-01

This technical report summarizes our activities conducted in Yr II. In Yr I we successfully demonstrated the feasibility of preparing the hydrogen selective SiC membrane with a chemical vapor deposition (CVD) technique. In addition, a SiC macroporous membrane was fabricated as a substrate candidate for the proposed SiC membrane. In Yr II we have focused on the development of a microporous SiC membrane as an intermediate layer between the substrate and the final membrane layer prepared from CVD. Powders and supported thin silicon carbide films (membranes) were prepared by a sol-gel technique using silica sol precursors as the source of silicon, and phenolic resin as the source of carbon. The powders and films were prepared by the carbothermal reduction reaction between the silica and the carbon source. The XRD analysis indicates that the powders and films consist of SiC, while the surface area measurement indicates that they contain micropores. SEM and AFM studies of the same films also validate this observation. The powders and membranes were also stable under different corrosive and harsh environments. The effects of these different treatments on the internal surface area, pore size distribution, and transport properties, were studied for both the powders and the membranes using the aforementioned techniques and XPS. Finally the SiC membrane materials are shown to have satisfactory hydrothermal stability for the proposed application. In Yr III, we will focus on the demonstration of the potential benefit using the SiC membrane developed from Yr I and II for the water-gas-shift (WGS) reaction

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Science.gov (United States)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

A novel core–shell nanocomposite Ni–Ca@mSiO{sub 2} for benzophenone selective hydrogenation

Energy Technology Data Exchange (ETDEWEB)

Han, Xue; Feng, Wenhui; Chu, Xiaoning; Chu, Hailong; Niu, Libo; Bai, Guoyi, E-mail: baiguoyi@hotmail.com [Hebei University, Key Laboratory of Chemical Biology of Hebei Province, College of Chemistry and Environmental Science (China)

2017-02-15

A novel core–shell nanocomposite Ni–Ca@mSiO{sub 2} was first prepared by a modified Stöber method in this paper. It has a core–shell structure with Ni (about 8 nm in diameter) and Ca as the cores and mesoporous silica as the outer shell, as proven by the transmission electron microscopy. This nanocomposite exhibited good catalytic performance in the selective hydrogenation of benzophenone, with 96.1% conversion and 94.9% selectivity for benzhydrol under relatively mild reaction conditions. It was demonstrated that addition of small amounts of alkaline Ca can not only markedly improve the dispersion of the active species but also tune the acid–base property of this nanocomposite, resulting in the efficient suppression of benzhydrol dehydration to achieve a high selectivity. Furthermore, the core–shell nanocomposite Ni–Ca@mSiO{sub 2} can be recycled four runs without appreciable loss of its initial activity, more stable than the traditional supported nanocatalyst Ni–Ca/mSiO{sub 2}. It was suggested that the outer mesoporous silica shell of Ni–Ca@mSiO{sub 2} can prevent both the aggregation and the leaching of the active Ni species, accounting for its relatively good stability.

Selective hydrogenation of acetylene on SiO{sub 2} supported Ni-In bimetallic catalysts: Promotional effect of In

Energy Technology Data Exchange (ETDEWEB)

Chen, Yanjun; Chen, Jixiang, E-mail: jxchen@tju.edu.cn

2016-11-30

Graphical abstract: A suitable Ni/In ratio remarkably enhanced the acetylene conversion, the selectivity to ethylene and the catalyst stability. Display Omitted - Highlights: • There was a promotional effect of In on the performance of Ni/SiO{sub 2}. • A suitable Ni/In ratio was required for good performance of Ni{sub x}In/SiO{sub 2}. • Both geometrical and electronic effects of In contributed to good performance. • Ni/SiO{sub 2} deactivation is mainly owing to phase change from Ni to nickel carbide. • The carbonaceous deposit was the main reason for Ni{sub x}In/SiO{sub 2} deactivation. - Abstract: Ni/SiO{sub 2} and the bimetallic Ni{sub x}In/SiO{sub 2} catalysts with different Ni/In ratios were tested for the selective hydrogenation of acetylene, and their physicochemical properties before and after the reaction were characterized by means of N{sub 2}-sorption, H{sub 2}-TPR, XRD, TEM, XPS, H{sub 2} chemisorption, C{sub 2}H{sub 4}-TPD, NH{sub 3}-TPD, FT-IR of adsorbed pyridine, and TG/DTA and Raman. A promotional effect of In on the performance of Ni/SiO{sub 2} was found, and Ni{sub x}In/SiO{sub 2} with a suitable Ni/In ratio gave much higher acetylene conversion, ethylene selectivity and catalyst stability than Ni/SiO{sub 2}. This is ascribed to the geometrical isolation of the reactive Ni atoms with the inert In ones and the charge transfer from the In atoms to Ni ones, both of which are favorable for reducing the adsorption strength of ethylene and restraining the C−C hydrogenolysis and the polymerizations of acetylene and the intermediate compounds. On the whole, Ni{sub 6}In/SiO{sub 2} and Ni{sub 10}In/SiO{sub 2} had better performance. Nevertheless, with increasing the In content, the selectivity to the C4+ hydrocarbons tended to increase due to the enhanced catalyst acidity because of the charge transfer from the In atoms to Ni ones. As the Lewis acid ones, the In sites could promote the polymerization. The catalyst deactivation was also analyzed

Core–shell-typed Ag-SiO2 nanoparticles as solar selective coating materials

International Nuclear Information System (INIS)

Gao, Tao; Jelle, Bjørn Petter; Gustavsen, Arild

2013-01-01

Silver (Ag) nanoparticles with typical diameter of about 50 nm have been prepared via a polyol process. The as-prepared Ag nanoparticles are well crystallized and exhibit a characteristic surface plasmon resonance (SPR) band centered at ∼423 nm. The SPR band shows a strong dependence on the sizes of Ag nanoparticles and the types of the dielectric medium. Core–shell-typed Ag-SiO 2 nanoparticles have also been prepared by depositing a thin layer (∼25 nm) of silica on Ag nanoparticles. The core–shell-typed Ag-SiO 2 nanoparticles show similar optical behaviors (absorption, transmission, and reflection) but enhanced stability compared to those of the Ag nanoparticles, indicating that the core–shell-typed Ag-SiO 2 nanoparticles may be used as solar selective coating materials for architectural window applications.

Ternary complexes of folate-PEG-appended dendrimer (G4)/α-cyclodextrin conjugate, siRNA and low-molecular-weight polysaccharide sacran as a novel tumor-selective siRNA delivery system.

Science.gov (United States)

Ohyama, Ayumu; Higashi, Taishi; Motoyama, Keiichi; Arima, Hidetoshi

2017-06-01

We previously developed a tumor-selective siRNA carrier by preparing polyamidoamine dendrimer (generation 4, G4) conjugates with α-cyclodextrin and folate-polyethylene glycol (Fol-PαC (G4)). In the present study, we developed ternary complexes of Fol-PαC (G4)/siRNA with low-molecular-weight-sacrans to achieve more effective siRNA transfer activity. Among the different molecular-weight sacrans, i.e. sacran 100, 1000 and 10,000 (MW 44,889Da, 943,692Da and 1,488,281Da, respectively), sacran 100 significantly increased the cellular uptake and the RNAi effects of Fol-PαC (G4)/siRNA binary complex with negligible cytotoxicity in KB cells (folate receptor-α positive cells). In addition, the ζ-potential and particle size of Fol-PαC (G4)/siRNA complex were decreased by the ternary complexation with sacran 100. Importantly, the in vivo RNAi effect of the ternary complex after the intravenous administration to tumor-bearing BALB/c mice was significantly higher than that of the binary complex. In conclusion, Fol-PαC (G4)/siRNA/sacran 100 ternary complex has a potential as a novel tumor-selective siRNA delivery system. Copyright © 2017 Elsevier B.V. All rights reserved.

Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

International Nuclear Information System (INIS)

Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

2014-01-01

This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Economic selection indexes for Hereford and Braford cattle raised in southern Brazil.

Science.gov (United States)

Costa, R F; Teixeira, B B M; Yokoo, M J; Cardoso, F F

2017-07-01

Economic selection indexes (EI) are considered the best way to select the most profitable animals for specific production systems. Nevertheless, in Brazil, few genetic evaluation programs deliver such indexes to their breeders. The aims of this study were to determine the breeding goals (BG) and economic values (EV, in US$) for typical beef cattle production systems in southern Brazil, to propose EI aimed to maximize profitability, and to compare the proposed EI with the currently used empirical index. Bioeconomic models were developed to characterize 3 typical production systems, identifying traits of economic impact and their respective EV. The first was called the calf-crop system and included the birth rate (BR), direct weaning weight (WWd), and mature cow weight (MCW) as selection goals. The second system was called the full-cycle system, and its breeding goals were BR, WWd, MCW, and carcass weight (CW). Finally, the third was called the stocking and finishing system, which had WWd and CW as breeding goals. To generate the EI, we adopted the selection criteria currently measured and used in the empirical index of PampaPlus, which is the genetic evaluation program of the Brazilian Hereford and Braford Association. The comparison between the EI and the current PampaPlus index was made by the aggregated genetic-economic gain per generation (Δ). Therefore, for each production system an index was developed using the derived economic weights, and it was compared with the current empirical index. The relative importance (RI) for BR, WWd, and MCW for the calf-crop system was 68.03%, 19.35%, and 12.62%, respectively. For the full-cycle system, the RI for BR, WWd, MCW, and CW were 69.63%, 7.31%, 5.01%, and 18.06%, respectively. For the stocking and finishing production system, the RI for WWd and CW was 34.20% and 65.80%, respectively. The Δ for the calf-crop system were US$6.12 and US$4.36, using the proposed economic and empirical indexes, respectively. Respective

An Associative Index Model for the Results List Based on Vannevar Bush's Selection Concept

Science.gov (United States)

Cole, Charles; Julien, Charles-Antoine; Leide, John E.

2010-01-01

Introduction: We define the results list problem in information search and suggest the "associative index model", an ad-hoc, user-derived indexing solution based on Vannevar Bush's description of an associative indexing approach for his memex machine. We further define what selection means in indexing terms with reference to Charles…

MySQL based selection of appropriate indexing technique in ...

African Journals Online (AJOL)

This paper deals with selection of appropriate indexing technique applied on MySQL Database for a health care system and related performance issues using multiclass support vector machine (SVM). The patient database is generally huge and contains lot of variations. For the quick search or fast retrieval of the desired ...

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

International Nuclear Information System (INIS)

Molina, J.; De La Hidalga, J.; Gutierrez, E.

2014-01-01

After fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices on high-index silicon (114) surfaces, their threshold voltage (Vth) and interface-states density (Dit) characteristics were measured under the influence of an externally applied magnetic field of B = 6 μT at room temperature. The electron flow of the MOSFET's channel presents high anisotropy on Si (114), and this effect is enhanced by using an external magnetic field B, applied parallel to the Si (114) surface but perpendicular to the electron flow direction. This special configuration results in the channel electrons experiencing a Lorentzian force which pushes the electrons closer to the Si (114)-SiO 2 interface and therefore to the special morphology of the Si (114) surface. Interestingly, Dit evaluation of n-type MOSFETs fabricated on Si (114) surfaces shows that the Si (114)-SiO 2 interface is of high quality so that Dit as low as ∼10 10  cm −2 ·eV −1 are obtained for MOSFETs with channels aligned at specific orientations. Additionally, using both a small positive Vds ≤ 100 mV and B = 6 μT, the former Dit is reduced by 35% in MOSFETs whose channels are aligned parallel to row-like nanostructures formed atop Si (114) surfaces (channels having a 90° rotation), whereas Dit is increased by 25% in MOSFETs whose channels are aligned perpendicular to these nanostructures (channels having a 0° rotation). From these results, the special morphology of a high-index Si (114) plane having nanochannels on its surface opens the possibility to reduce the electron-trapping characteristics of MOSFET devices having deep-submicron features and operating at very high frequencies

A proposed selection index for feedlot profitability based on estimated breeding values.

Science.gov (United States)

van der Westhuizen, R R; van der Westhuizen, J

2009-04-22

It is generally accepted that feed intake and growth (gain) are the most important economic components when calculating profitability in a growth test or feedlot. We developed a single post-weaning growth (feedlot) index based on the economic values of different components. Variance components, heritabilities and genetic correlations for and between initial weight (IW), final weight (FW), feed intake (FI), and shoulder height (SHD) were estimated by multitrait restricted maximum likelihood procedures. The estimated breeding values (EBVs) and the economic values for IW, FW and FI were used in a selection index to estimate a post-weaning or feedlot profitability value. Heritabilities for IW, FW, FI, and SHD were 0.41, 0.40, 0.33, and 0.51, respectively. The highest genetic correlations were 0.78 (between IW and FW) and 0.70 (between FI and FW). EBVs were used in a selection index to calculate a single economical value for each animal. This economic value is an indication of the gross profitability value or the gross test value (GTV) of the animal in a post-weaning growth test. GTVs varied between -R192.17 and R231.38 with an average of R9.31 and a standard deviation of R39.96. The Pearson correlations between EBVs (for production and efficiency traits) and GTV ranged from -0.51 to 0.68. The lowest correlation (closest to zero) was 0.26 between the Kleiber ratio and GTV. Correlations of 0.68 and -0.51 were estimated between average daily gain and GTV and feed conversion ratio and GTV, respectively. These results showed that it is possible to select for GTV. The selection index can benefit feedlotting in selecting offspring of bulls with high GTVs to maximize profitability.

Effects of dew point on selective oxidation of TRIP steels containing Si, Mn, and B

Science.gov (United States)

Lee, Suk-Kyu; Kim, Jong-Sang; Choi, Jin-Won; Kang, Namhyun; Cho, Kyung-Mox

2011-04-01

The selective oxidation of Si, Mn, and B on TRIP steel surfaces is a widely known phenomenon that occurs during heat treatment. However, the relationship between oxide formation and the annealing factors is not completely understood. This study examines the effect of the annealing conditions (dew point and annealing temperature) on oxide formation. A low dew point of -40 °C leads to the formation of Si-based oxides on the surface. A high dew point of -20 °C changes the oxide type to Mn-based oxides because the formation of Si oxides on the surface is suppressed by internal oxidation. Mn-based oxides exhibit superior wettability due to aluminothermic reduction during galvanizing.

EVALUATION OF DISTAL UPPER EXTREMITY (DUE MUSCULOSKELETAL DISORDERS BY STRAIN INDEX (SI IN AN IRONWORK INDUSTRY

Directory of Open Access Journals (Sweden)

Seyed-Ali Moussavi-Najarkola

2008-04-01

Full Text Available Background and aims:Work-related musculoskeletal disorders (WMSDS is one of the mostimportant problems in working populations of Iranian industries; so, in order to evaluate theintegrated roles and effects of various ergonomic risk factors inducing such disorders, the StrainIndex (SI methods was used.Methods: This was a cross-sectional study conducted on 448 male subjects including 63controls working in administrative jobs and 385 cases working in lathing, welding, melting andfoundry jobs using integrated procedure which includes observations, interview, NordicMusculoskeletal Questionnaire (NMQ methods and SI model. All workers were questioned.Data were analyzed using SPSS software v. 11 and Excel package.Results: The most prevalent MSDs in upper limbs were found in melting lathing, foundry andwelding respectively. There was a significant relationship between age and job groups (c2=7.33;df=16; p<0.001. One-way analysis of variance showed a significant differences among means ofcalculated Strain Indices of administrative (1.06, lathing (6.52, welding (3.68, melting (7.79and foundry (6.33 jobs (F=5.92; df=16; p=0.005. Also it was revealed that melting job wasattributed as "hazardous job" (4 risk level, lathing and foundry jobs were referred to "moderaterisk level" (3 risk level, welding job was allocated as "uncertain risk level" (2 risk level, andadministrative job was attributed as "safe risk level" (1 risk level. Moreover, there was asignificant relationship between DUE and job groups (c2=11.92; df=12; p=0.004.The paired ttestshowed significant difference with direct and relatively complete correlation between meansof Strain Indices in right (6.53 and left (4.29 hands (r=0.69; t=3.15; p<0.001.Conclusion: The Strain Index (SI model can be referred as an efficient and applicable methodfor the assessment of ergonomics risk factors inducing upper extremity musculoskeletal disorders(UEMSDs, classifying jobs, correcting and modifying work situations

High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

International Nuclear Information System (INIS)

Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

2008-01-01

This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

Selective laser melting of carbon/AlSi10Mg composites: Microstructure, mechanical and electronical properties

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xiao; Song, Bo, E-mail: bosong@hust.edu.cn; Fan, Wenrui; Zhang, Yuanjie; Shi, Yusheng

2016-04-25

Carbon nanotubes/AlSi10Mg composites has drawn lots of attention in structural engineering and functional device applications due to its extraordinary high elastic modulus and mechanical strength as well as excellent electrical and thermal conductivities. In this study, the CNTs/AlSi10Mg composites was firstly prepared and then processed by selective laser melting. The powder preparation, SLM process, and microstructure evolution, properties were clarified. The results showed that CNTs were decomposed due to the direct interaction with the laser beam. The SLMed composites displayed a similar microstructure to that of SLMed AlSi10Mg. The common brittleness phase Al{sub 4}C{sub 3} didn't form, and the carbon dispersion strengthening was observed. The electrical resistivity of the composites was reduced significantly and the hardness was improved. - Highlights: • Carbon nanotubes/AlSi10Mg powder were prepared by slurry ball milling process. • Carbon nanotubes/AlSi10Mg composites were firstly prepared by SLM. • The electrical resistivity of the composites was significantly reduced and hardness was improved.

Index selection of beef cattle for growth and milk production using ...

African Journals Online (AJOL)

Index selection of beef cattle for growth and milk production using computer simulation modelling. ... South African Journal of Animal Science ... into the model allowed for the introduction of variation between individuals and generations.

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2015-01-01

We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

Energy Technology Data Exchange (ETDEWEB)

Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

2008-12-05

This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

International Nuclear Information System (INIS)

Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

2012-01-01

Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

Semi-polar GaN heteroepitaxy an high index Si-surfaces

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Magdeburg (Germany)

2011-07-01

Due to the lack of GaN homosubstrates, the growth of GaN-based devices is usually performed on heterosubstrates as sapphire or SiC. These substrates are either insulating or expensive, and both unavailable in large diameters. Meanwhile, silicon can meet the requirements for a low price and thermally well conducting substrate and also enabling the integration of optoelectronic devices with Si-based electronics. Up to now, the good matching of hexagonal GaN with the three-fold symmetry of Si(111) greatly promotes the c-axis orientated growth of GaN on this surface plane. A large spontaneous and piezoelectric polarization oriented along the c-axis exists in such hexagonal structure leading to low efficiencies for thick quantum wells. The attention to the growth of non-polar or semi-polar GaN based epitaxial structures has been increased recently because of reducing the effect of the polarization fields in these growth directions. Therefore we studied semi-polar GaN epilayers grown by metalorganic vapor phase epitaxy on silicon substrates with different orientations from Si(211) to Si(711). We observed that AlN seeding layer growth time play a significant role in obtaining the different GaN texture.

Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

International Nuclear Information System (INIS)

Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

2008-01-01

In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

Energy Technology Data Exchange (ETDEWEB)

Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

2008-11-03

In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

Selective SiO2 etching in three dimensional structures using parylene-C as mask

NARCIS (Netherlands)

Veltkamp, Henk-Willem; Zhao, Yiyuan; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad

2017-01-01

This abstract describes an application of an easy and straightforward method for selective SiO2 etching in three dimensional structures, which is developed by our group. The application in this abstract is the protection of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against

Microstructure and mechanical properties of Al-12Si produced by selective laser melting

Science.gov (United States)

Fefelov, A. S.; Merkushev, A. G.; Chikova, O. A.

2017-10-01

Al-12Si specimens are produced by selective laser melting (SLM) from gas atomized powders. Installation for the production of powder is original. All specimens were prepared using the EOSINT M 280 device. A fine cellular structure is observed with residual free Si along the cellular boundaries. Room temperature tensile tests reveal remarkable mechanical behavior: the samples show yield and tensile strengths of about 102 MPa and 425 MPa, respectively, along with fracture strain of 12%. The study of crack surface morphology was shown by the example of a sample. Except the spherical pores, the interface of the molten pool also appears on the fracture surface, which indicates a mixture of fragile and ductile fracture. Additionally, the agglomerated silicon group appears also on the fracture surface.

Microstructure and Properties of AlSi10Mg Powder for Selective Laser Melting

Directory of Open Access Journals (Sweden)

TANG Pengjun

2018-02-01

Full Text Available The AlSi10Mg powder was prepared by supersonic gas atomization. After classified, the powder was fabricated into block by selective laser melting (SLM. The microstructure, phase, and evolutions of powder and block were investigated by optical microscope, scanning electron microscope and X-Ray Diffraction. The tensile properties of SLM block were tested by tensile experiments at room temperature. The results show that the size distribution of AlSi10Mg powder after classified can meet the requirements of SLM technology. The powder always is spherical and spherical-like. Meanwhile, the microstructure of powders is fine and uniform, which contain α(Al matrix and (α+Si eutectic. In addition, the melt pool boundaries of SLM block are legible. The microstructure is also uniform and densified, the relative density approaches to 99.5%. On the other hand, only α(Al and few Silicon phase are detected in this condition, due to the most alloying elements are dissolved in α(Al matrix. At room temperature, the ultimate tensile strength of SLM block reaches up to 442 MPa.

Economic values and selection index in different Angus-Nellore cross-bred production systems.

Science.gov (United States)

Fernandes, G M; Savegnago, R P; El Faro, L; Mosaquatro Roso, V; de Paz, C C P

2018-06-01

Bioeconomic models were developed to calculate economic values (EV) for economically important traits in beef cattle, to evaluate the impact of these traits on production profitability, to assess possible market changes with a payment system and to develop economic selection indexes for Angus cattle for two production systems. Two beef cattle production systems were simulated as follows: a cow-calf cycle (CC) and a complete cycle (CoC). Following selection, positive changes in the EV were observed. In the CC, each 1.0% increment in weaning weight (WW), weaning rate (WR) and pregnancy rate (PR) resulted in increases in US$ 1.30, US$ 3.68 and US$ 3.55 per cow/year in profit, respectively. In the CoC, EV of US$ 1.01, US$ 1.79, US$ 1.19, US$ 1.34, US$ 6.84 and US$ 7.86 per cow/year were obtained for WW, year weight, yearling weight, final weight, WR and PR, respectively. The payment system for carcass quality showed that the scenario considering that 100% of the animals displayed uniform carcasses exhibited the highest EV and was considered optimal. Considering the sensitivity analysis, the price paid per animal was the factor that most affected the EV in both systems. The selection indexes obtained may be used in similar production systems, and the use of EV and selection indexes are important tools for any production system with positive change in profit after selection. © 2018 Blackwell Verlag GmbH.

Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

International Nuclear Information System (INIS)

Wang Chunyu; Donnelly, Vincent M.

2008-01-01

The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

Reliability, Construct Validity and Interpretability of the Brazilian version of the Rapid Upper Limb Assessment (RULA) and Strain Index (SI).

Science.gov (United States)

Valentim, Daniela Pereira; Sato, Tatiana de Oliveira; Comper, Maria Luiza Caíres; Silva, Anderson Martins da; Boas, Cristiana Villas; Padula, Rosimeire Simprini

There are very few observational methods for analysis of biomechanical exposure available in Brazilian-Portuguese. This study aimed to cross-culturally adapt and test the measurement properties of the Rapid Upper Limb Assessment (RULA) and Strain Index (SI). The cross-cultural adaptation and measurement properties test were established according to Beaton et al. and COSMIN guidelines, respectively. Several tasks that required static posture and/or repetitive motion of upper limbs were evaluated (n>100). The intra-raters' reliability for the RULA ranged from poor to almost perfect (k: 0.00-0.93), and SI from poor to excellent (ICC 2.1 : 0.05-0.99). The inter-raters' reliability was very poor for RULA (k: -0.12 to 0.13) and ranged from very poor to moderate for SI (ICC 2.1 : 0.00-0.53). The agreement was good for RULA (75-100% intra-raters, and 42.24-100% inter-raters) and to SI (EPM: -1.03% to 1.97%; intra-raters, and -0.17% to 1.51% inter-raters). The internal consistency was appropriate for RULA (α=0.88), and low for SI (α=0.65). Moderate construct validity were observed between RULA and SI, in wrist/hand-wrist posture (rho: 0.61) and strength/intensity of exertion (rho: 0.39). The adapted versions of the RULA and SI presented semantic and cultural equivalence for the Brazilian Portuguese. The RULA and SI had reliability estimates ranged from very poor to almost perfect. The internal consistency for RULA was better than the SI. The correlation between methods was moderate only of muscle request/movement repetition. Previous training is mandatory to use of observations methods for biomechanical exposure assessment, although it does not guarantee good reproducibility of these measures. Copyright © 2017 Associação Brasileira de Pesquisa e Pós-Graduação em Fisioterapia. Publicado por Elsevier Editora Ltda. All rights reserved.

Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} anti-reflective coating

Energy Technology Data Exchange (ETDEWEB)

Lee, Yi-Yu; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Yeh, Chien-Wu

2015-11-01

Highlights: • Employed SOF technology for both phosphorus diffusion and multi-layer ARCs. • Optical properties of TiO{sub 2}, SiO{sub 2}, and SiO{sub 2}/TiO{sub 2}/TiO{sub 2} films are characterized. • Photovoltaic performances of the fabricated solar cells are measured and compared. • An impressive efficiency of 18.25% was obtained by using the SOF processes. - Abstract: This study employed spin-on film (SOF) technology for the fabrication of phosphorus diffusion and multi-layer anti-reflective coatings (ARCs) with a graded index on silicon (Si) wafers. Low cost and high efficiency solar cells are important issues for the operating cost of a photovoltaic system. SOF technology for the fabrication of solar cells can be for the achievement of this goal. This study succeeded in the application of SOF technology in the preparation of both phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} ARCs for Si solar cells. Optical properties of TiO{sub 2}, SiO{sub 2}, and multi-layer SiO{sub 2}/TiO{sub 2} deposition by SOF are characterized. Electrical and optical characteristics of the fabricated solar cells are measured and compared. An impressive efficiency of 18.25% was obtained by using the SOF processes.

Applications of Si/SiGe heterostructures to CMOS devices

International Nuclear Information System (INIS)

Sidek, R.M.

1999-03-01

For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

Return on Scientific Investment - RoSI: a PMO dynamical index proposal for scientific projects performance evaluation and management.

Science.gov (United States)

Caous, Cristofer André; Machado, Birajara; Hors, Cora; Zeh, Andrea Kaufmann; Dias, Cleber Gustavo; Amaro Junior, Edson

2012-01-01

To propose a measure (index) of expected risks to evaluate and follow up the performance analysis of research projects involving financial and adequate structure parameters for its development. A ranking of acceptable results regarding research projects with complex variables was used as an index to gauge a project performance. In order to implement this method the ulcer index as the basic model to accommodate the following variables was applied: costs, high impact publication, fund raising, and patent registry. The proposed structured analysis, named here as RoSI (Return on Scientific Investment) comprises a pipeline of analysis to characterize the risk based on a modeling tool that comprises multiple variables interacting in semi-quantitatively environments. This method was tested with data from three different projects in our Institution (projects A, B and C). Different curves reflected the ulcer indexes identifying the project that may have a minor risk (project C) related to development and expected results according to initial or full investment. The results showed that this model contributes significantly to the analysis of risk and planning as well as to the definition of necessary investments that consider contingency actions with benefits to the different stakeholders: the investor or donor, the project manager and the researchers.

Grafted SiC nanocrystals

DEFF Research Database (Denmark)

Saini, Isha; Sharma, Annu; Dhiman, Rajnish

2017-01-01

), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

OpenAIRE

Yudi Darma

2008-01-01

Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of ...

Prediction of Massive Transfusion in Trauma Patients with Shock Index, Modified Shock Index, and Age Shock Index

Directory of Open Access Journals (Sweden)

Cheng-Shyuan Rau

2016-07-01

Full Text Available Objectives: The shock index (SI and its derivations, the modified shock index (MSI and the age shock index (Age SI, have been used to identify trauma patients with unstable hemodynamic status. The aim of this study was to evaluate their use in predicting the requirement for massive transfusion (MT in trauma patients upon arrival at the hospital. Participants: A patient receiving transfusion of 10 or more units of packed red blood cells or whole blood within 24 h of arrival at the emergency department was defined as having received MT. Detailed data of 2490 patients hospitalized for trauma between 1 January 2009, and 31 December 2014, who had received blood transfusion within 24 h of arrival at the emergency department, were retrieved from the Trauma Registry System of a level I regional trauma center. These included 99 patients who received MT and 2391 patients who did not. Patients with incomplete registration data were excluded from the study. The two-sided Fisher exact test or Pearson chi-square test were used to compare categorical data. The unpaired Student t-test was used to analyze normally distributed continuous data, and the Mann-Whitney U-test was used to compare non-normally distributed data. Parameters including systolic blood pressure (SBP, heart rate (HR, hemoglobin level (Hb, base deficit (BD, SI, MSI, and Age SI that could provide cut-off points for predicting the patients’ probability of receiving MT were identified by the development of specific receiver operating characteristic (ROC curves. High accuracy was defined as an area under the curve (AUC of more than 0.9, moderate accuracy was defined as an AUC between 0.9 and 0.7, and low accuracy was defined as an AUC less than 0.7. Results: In addition to a significantly higher Injury Severity Score (ISS and worse outcome, the patients requiring MT presented with a significantly higher HR and lower SBP, Hb, and BD, as well as significantly increased SI, MSI, and Age SI. Among

Research on the Selection Strategy of Green Building Parts Supplier Based on the Catastrophe Theory and Kent Index Method

Directory of Open Access Journals (Sweden)

Zhenhua Luo

2016-01-01

Full Text Available At present, the green building and housing industrialization are two mainstream directions in the real estate industry. The production of green building parts which combines green building and housing industrialization, two concepts, is to be vigorously developed. The key of quality assurance in the assembly project is choosing reliable and proper green building parts suppliers. This paper analyzes the inherent requirements of the green building, combined with the characteristics of the housing industrialization, and puts forward an evaluation index system of supplier selection for green building parts, which includes product index, enterprise index, green development index, and cooperation ability index. To reduce the influence of subjective factors, the improved method which merges Kent index method and catastrophe theory is applied to the green building parts supplier selection and evaluation. This paper takes the selection of the unit bathroom suppliers as an example, uses the improved model to calculate and analyze the data of each supplier, and finally selects the optimal supplier. With combination of the Kent index and the catastrophe theory, the result shows that it can effectively reduce the subjectivity of the evaluation and provide a basis for the selection of the green building parts suppliers.

Economic selection index development for Beefmaster cattle II: General-purpose breeding objective.

Science.gov (United States)

Ochsner, K P; MacNeil, M D; Lewis, R M; Spangler, M L

2017-05-01

An economic selection index was developed for Beefmaster cattle in a general-purpose production system in which bulls are mated to a combination of heifers and mature cows, with resulting progeny retained as replacements or sold at weaning. National average prices from 2010 to 2014 were used to establish income and expenses for the system. Genetic parameters were obtained from the literature. Economic values were estimated by simulating 100,000 animals and approximating the partial derivatives of the profit function by perturbing traits 1 at a time, by 1 unit, while holding the other traits constant at their respective means. Relative economic values for the objective traits calving difficultly direct (CDd), calving difficulty maternal (CDm), weaning weight direct (WWd), weaning weight maternal (WWm), mature cow weight (MW), and heifer pregnancy (HP) were -2.11, -1.53, 18.49, 11.28, -33.46, and 1.19, respectively. Consequently, under the scenario assumed herein, the greatest improvements in profitability could be made by decreasing maintenance energy costs associated with MW followed by improvements in weaning weight. The accuracy of the index lies between 0.218 (phenotypic-based index selection) and 0.428 (breeding values known without error). Implementation of this index would facilitate genetic improvement and increase profitability of Beefmaster cattle operations with a general-purpose breeding objective when replacement females are retained and with weaned calves as the sale end point.

Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

Science.gov (United States)

Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

2018-02-01

We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

Using Fit Indexes to Select a Covariance Model for Longitudinal Data

Science.gov (United States)

Liu, Siwei; Rovine, Michael J.; Molenaar, Peter C. M.

2012-01-01

This study investigated the performance of fit indexes in selecting a covariance structure for longitudinal data. Data were simulated to follow a compound symmetry, first-order autoregressive, first-order moving average, or random-coefficients covariance structure. We examined the ability of the likelihood ratio test (LRT), root mean square error…

Selective electrochemical gold deposition onto p-Si (1 0 0) surfaces

Energy Technology Data Exchange (ETDEWEB)

Santinacci, L; Etcheberry, A [Institut Lavoisier de Versailles (UMR CNRS 8180), University of Versailles-Saint-Quentin, 45 avenue des Etats-Unis, F-78035 Versailles cedex (France); Djenizian, T [Laboratoire Chimie Provence (UMR CNRS 6264), University of Aix-Marseille I-II-III, Centre Saint-Jerome, F-13397 Marseille Cedex 20 (France); Schwaller, P [Laboratory for Mechanics of Materials and Nanostructures, Swiss Federal Laboratory for Materials Testing and Research, Feuerwerkstr. 39, CH-3602 Thun (Switzerland); Suter, T [Laboratory for Corrosion and Materials Integrity, Swiss Federal Laboratory for Materials Testing and Research, Ueberlandstr. 129, CH-8600 Duebendorf (Switzerland); Schmuki, P [Department of Materials Science, LKO-WW4, Friedrich-Alexander-University Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)], E-mail: lionel.santinacci@uvsq.fr

2008-09-07

In this paper, we report selective electrochemical gold deposition onto p-type Si (1 0 0) into nanoscratches produced through a thin oxide layer using an atomic force microscope. A detailed description of the substrate engraving process is presented. The influence of the main scratching parameters such as the normal applied force, the number of scans and the scanning velocity are investigated as well as the mechanical properties of the substrate. Gold deposition is carried out in a KAu(CN){sub 2} + KCN solution by applying cathodic voltages for various durations. The gold deposition process is investigated by cyclic voltammetry. Reactivity enhancement at the scratched locations was studied by comparing the electrochemical behaviour of intact and engraved surfaces using a micro-electrochemical setup. Selective electrochemical gold deposition is achieved: metallic patterns with a sub-500 nm lateral resolution are obtained demonstrating, therefore, the bearing potential of this patterning technique.

Design, building and use of a selective pyranometer for the definition and measurement of the lighting index

International Nuclear Information System (INIS)

Guicherd, Roger.

1976-03-01

The design, building, testing, calibration and operation of a selective pyranometer intended for the definition and measurement of the lighting index are described; with this original apparatus the energetic lighting at ground level is measured selectively and continuously. The measurement head has three transducers equipped with hollow hemispherical filters measuring energy in the ultraviolet, visible and infrared range respectively. In conclusion, a definition of the lighting index obtained with this thermally compensated, selective pyranometer P.S. is proposed [fr

Experimental Research on Selective Laser Melting AlSi10Mg Alloys: Process, Densification and Performance

Science.gov (United States)

Chen, Zhen; Wei, Zhengying; Wei, Pei; Chen, Shenggui; Lu, Bingheng; Du, Jun; Li, Junfeng; Zhang, Shuzhe

2017-12-01

In this work, a set of experiments was designed to investigate the effect of process parameters on the relative density of the AlSi10Mg parts manufactured by SLM. The influence of laser scan speed v, laser power P and hatch space H, which were considered as the dominant parameters, on the powder melting and densification behavior was also studied experimentally. In addition, the laser energy density was introduced to evaluate the combined effect of the above dominant parameters, so as to control the SLM process integrally. As a result, a high relative density (> 97%) was obtained by SLM at an optimized laser energy density of 3.5-5.5 J/mm2. Moreover, a parameter-densification map was established to visually select the optimum process parameters for the SLM-processed AlSi10Mg parts with elevated density and required mechanical properties. The results provide an important experimental guidance for obtaining AlSi10Mg components with full density and gradient functional porosity by SLM.

Mechanical and dynamical behaviors of ZrSi and ZrSi{sub 2} bulk metallic glasses: A molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Ju, Shin-Pon, E-mail: jushin-pon@mail.nsysu.edu.tw [Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung 804, Taiwan (China); Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 807, Taiwan (China); Wu, Tsang-Yu; Liu, Shih-Hao [Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung 804, Taiwan (China)

2015-03-14

The mechanical and dynamical properties of ZrSi and ZrSi{sub 2} bulk metallic glasses (BMGs) have been investigated by molecular dynamics simulation. The Honeycutt-Anderson (HA) index analysis indicates that the major indexes in ZrSi and ZrSi{sub 2} bulk metallic glasses are 1551, 1541, and 1431, which refers to the liquid structure. For uniaxial tension, the results show that the ZrSi and ZrSi{sub 2} BMGs are more ductile than their crystal counterparts. The evolution of the distribution of atomic local shear strain clearly shows the initialization of shear transformation zones (STZs), the extension of STZs, and the formation of shear bands along a direction 45° from the tensile direction when the tensile strain gradually increases. The self-diffusion coefficients of ZrSi and ZrSi{sub 2} BMGs at temperatures near their melting points were calculated by the Einstein equation according to the slopes of the MSD profiles at the long-time limit. Because the HA fraction summation of icosahedral-like structures of ZrSi BMG is higher than that of ZrSi{sub 2} BMG, and these local structures are more dense, the self-diffusion coefficients of the total, Zr, and Si atoms of ZrSi{sub 2} BMG are larger than those of ZrSi BMG. This can be attributed to the cage effect, where a denser local structure has a higher possibility of atoms jumping back to form a backflow and then suppress atomic diffusivity. For ZrSi{sub 2} BMG, the self-diffusion coefficient of Si increases with temperature more significantly than does that of Zr, because more open packing rhombohedra structures are formed by the Si-Si pair.

Fabrication mechanism of friction-induced selective etching on Si(100) surface.

Science.gov (United States)

Guo, Jian; Song, Chenfei; Li, Xiaoying; Yu, Bingjun; Dong, Hanshan; Qian, Linmao; Zhou, Zhongrong

2012-02-23

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

Influence of Minor Alloying Elements on Selective Oxidation and Reactive Wetting of CMnSi TRIP Steel during Hot Dip Galvanizing

Science.gov (United States)

Cho, Lawrence; Kim, Myung Soo; Kim, Young Ha; De Cooman, Bruno C.

2014-09-01

The influence of the addition of minor alloying elements on the selective oxidation and the reactive wetting of CMnSi transformation-induced plasticity (TRIP) steels was studied by means of galvanizing simulator tests. Five TRIP steels containing small alloying additions of Cr, Ni, Ti, Cu, and Sn were investigated. After intercritical annealing (IA) at 1093 K (820 °C) in a N2 + 5 pct H2 gas atmosphere with a dew point of 213 K (-60 °C), two types of oxides were formed on the strip surface: Mn-rich xMnO·SiO2 ( x > 1.5) and Si-rich xMnO·SiO2 ( x galvanizing. The addition of a small amount of Sn is shown to significantly decrease the density of Zn-coating defects on CMnSi TRIP steels.

Development of a seaweed species-selection index for successful culture in a seaweed-based integrated aquaculture system

Science.gov (United States)

Kang, Yun Hee; Hwang, Jae Ran; Chung, Ik Kyo; Park, Sang Rul

2013-03-01

Integrated multi-trophic aquaculture (IMTA) has been proposed as a concept that combines the cultivation of fed aquaculture species ( e.g., finfish/shrimp) with extractive aquaculture species ( e.g., shellfish/seaweed). In seaweed-based integrated aquaculture, seaweeds have the capacity to reduce the environmental impact of nitrogen-rich effluents on coastal ecosystems. Thus, selection of optimal species for such aquaculture is of great importance. The present study aimed to develop a seaweed species-selection index for selecting suitable species in seaweed-based integrated aquaculture system. The index was synthesized using available literature-based information, reference data, and physiological seaweed experiments to identify and prioritize the desired species. Undaria pinnatifida, Porphyra yezoensis and Ulva compressa scored the highest according to a seaweed-based integrated aquaculture suitability index (SASI). Seaweed species with the highest scores were adjudged to fit the integrated aquaculture systems. Despite the application of this model limited by local aquaculture environment, it is considered to be a useful tool for selecting seaweed species in IMTA.

A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:P

Science.gov (United States)

Hartmann, J. M.; Veillerot, M.; Prévitali, B.

2017-10-01

We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of Si:P layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min-1, 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si:C layers) were obtained at 700 °C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 °C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 × 1020 cm-3 compared to 1021 cm-3).

Selective laser melting of hypereutectic Al-Si40-powder using ultra-short laser pulses

Science.gov (United States)

Ullsperger, T.; Matthäus, G.; Kaden, L.; Engelhardt, H.; Rettenmayr, M.; Risse, S.; Tünnermann, A.; Nolte, S.

2017-12-01

We investigate the use of ultra-short laser pulses for the selective melting of Al-Si40-powder to fabricate complex light-weight structures with wall sizes below 100 μ {m} combined with higher tensile strength and lower thermal expansion coefficient in comparison to standard Al-Si alloys. During the cooling process using conventional techniques, large primary silicon particles are formed which impairs the mechanical and thermal properties. We demonstrate that these limitations can be overcome using ultra-short laser pulses enabling the rapid heating and cooling in a non-thermal equilibrium process. We analyze the morphology characteristics and micro-structures of single tracks and thin-walled structures depending on pulse energy, repetition rate and scanning velocity utilizing pulses with a duration of 500 {fs} at a wavelength of 1030 {nm}. The possibility to specifically change and optimize the microstructure is shown.

Simulation and fabrication of SiO{sub 2}/graded-index TiO{sub 2} antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition process

Energy Technology Data Exchange (ETDEWEB)

Liu, Jheng-Jie; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Lee, Yi-Yu; Chang, Chia-Ming

2014-11-03

GaAs-based multi-junction solar cells (MJ-SCs) provide a wide solar-energy absorption-band (300–1800 nm), but designing and fabricating a broadband antireflection coating (ARC) are challenging. Because MJ-SCs are typically in a series that connects each subcell, the total output current is limited by the subcell that generates the smallest photocurrent. Thus, the ARC for MJ-SCs must be designed not only to obtain broadband absorption but also to minimize light reflection at the wavelength band of the current-limited cell. This study proposes a broadband SiO{sub 2}/graded-index TiO{sub 2} ARC for improving the current-limited subcell performance by using a hybrid deposition (e-beam evaporation and spin-on coating). A bottom TiO{sub 2} layer and a top SiO{sub 2} layer were deposited through e-beam evaporation, but the middle TiO{sub 2} layer was deposited using spin-on coating because the refractive index values of the TiO{sub 2} films could be tuned by applying the spin speed. Therefore, the graded-index TiO{sub 2} layers were easily obtained using a hybrid deposition method. In addition, a suitable reflectance spectrum of an ARC structure for a middle-cell current-limited triple-junction (3-J) GaAs solar cell was simulated using commercial optical software. The photovoltaic current–voltage and external quantum efficiency (EQE) were measured and compared. The resulting improvements of a short-circuit current of 32.4% and conversion efficiency of 31.8% were attributed to an enhanced EQE of 32.97% as well as a low broadband reflectance exhibited on the middle cell of the 3-J GaAs solar cell with a SiO{sub 2}/graded-index TiO{sub 2} ARC. - Highlights: • A broadband SiO{sub 2}/graded-index TiO{sub 2} ARC obtained by a hybrid deposition • A suitable triple-layer ARC was simulated by a commercial optical software. • Optical reflection, photovoltaic I–V, and EQE of 3-J GaAs solar cell were characterized. • An increased J{sub sc} of 32.4% and an increased �

Effects of annealing temperatures on the morphological, mechanical, surface chemical bonding, and solar selectivity properties of sputtered TiAlSiN thin films

International Nuclear Information System (INIS)

Rahman, M. Mahbubur; Jiang, Zhong-Tao; Zhou, Zhi-feng; Xie, Zonghan; Yin, Chun Yang; Kabir, Humayun; Haque, Md. Mahbubul; Amri, Amun; Mondinos, Nicholas; Altarawneh, Mohammednoor

2016-01-01

Quaternary sputtered TiAlSiN coatings were investigated for their high temperature structural stability, surface morphology, mechanical behaviors, surface chemical bonding states, solar absorptance and thermal emittance for possible solar selective surface applications. The TiAlSiN films were synthesized, via unbalanced magnetron sputtered technology, on AISI M2 steel substrate and annealed at 500 °C - 800 °C temperature range. SEM micrographs show nanocomposite-like structure with amorphous grain boundaries. Nanoindentation analyses indicate a decrease of hardness, plastic deformation and constant yield strength for the coatings. XPS analysis show mixed Ti, Al and Si nitride and oxide as main coating components but at 800 °C the top layer of the coatings is clearly composed of only Ti and Al oxides. Synchrotron radiation XRD (SR-XRD) results indicate various Ti, Al and Si nitride and oxide phases, for the above annealing temperature range with a phase change occurring with the Fe component of the substrate. UV–Vis spectroscopy, FTIR spectroscopy studies determined a high solar selectivity, s of 24.6 for the sample annealed at 600 °C. Overall results show good structural and morphological stability of these coatings at temperatures up to 800 °C with a very good solar selectivity for real world applications. - Highlights: • TiAlSiN sputtered coatings were characterized for solar selective applications. • In situ synchrotron radiation XRD were studies show the occurrence of multiple stable phases. • A high selectivity of 24.63 has been achieved for the coatings annealed at 700 °C. • Existence of XRD phases were also confirmed by XPS measurements. • At high temperature annealing the mechanical properties of films were governed by the utmost surfaces of the films.

Challenges in Selecting an Appropriate Heat Stress Index to Protect Workers in Hot and Humid Underground Mines

Directory of Open Access Journals (Sweden)

Pedram Roghanchi

2018-03-01

Full Text Available Background: A detailed evaluation of the underground mine climate requires extensive measurements to be performed coupled to climatic modeling work. This can be labor-intensive and time-consuming, and consequently impractical for daily work comfort assessments. Therefore, a simple indicator like a heat stress index is needed to enable a quick, valid, and acceptable evaluation of underground climatic conditions on a regular basis. This can be explained by the unending quest to develop a “universal index,” which has led to the proliferation of many proposed heat stress indices. Methods: The aim of this research study is to discuss the challenges in identifying and selecting an appropriate heat stress index for thermal planning and management purposes in underground mines. A method is proposed coupled to a defined strategy for selecting and recommending heat stress indices to be used in underground metal mines in the United States and worldwide based on a thermal comfort model. Results: The performance of current heat stress indices used in underground mines varies based on the climatic conditions and the level of activities. Therefore, carefully selecting or establishing an appropriate heat stress index is of paramount importance to ensure the safety, health, and increasing productivity of the underground workers. Conclusion: This method presents an important tool to assess and select the most appropriate index for certain climatic conditions to protect the underground workers from heat-related illnesses. Although complex, the method presents results that are easy to interpret and understand than any of the currently available evaluation methods. Keywords: climatic conditions, heat stress index, thermal comfort, underground mining

Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.

Science.gov (United States)

Xue, Muyu; Islam, Raisul; Meng, Andrew C; Lyu, Zheng; Lu, Ching-Ying; Tae, Christian; Braun, Michael R; Zang, Kai; McIntyre, Paul C; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

2017-12-06

In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an ∼13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 μm is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiO x ) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiO x ), a well-known material for an electron-selective contact interlayer. Key parameters including V oc and J sc also show different degrees of enhancement if single (NiO x only) or double (both NiO x and TiO x ) carrier-selective contacts are integrated. The fabrication process for TiO x and NiO x layer integration is scalable and shows good compatibility with the device.

Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

International Nuclear Information System (INIS)

Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

2000-01-01

The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

Science.gov (United States)

Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

2017-12-01

Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Directory of Open Access Journals (Sweden)

Sangmo Koo

2016-09-01

Full Text Available The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100 and (110 orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D structure.

Enhanced middle-infrared light transmission through Au/SiO(x)N(y)/Au aperture arrays.

Science.gov (United States)

Xiao, Gongli; Yao, Xiang; Ji, Xinming; Zhou, Jia; Bao, Zongming; Huang, Yiping

2011-12-01

The enhanced middle-infrared light transmission through Au/SiO(x)N(y)/Au aperture arrays by changing the refractive index and the thickness of a dielectric layer was studied experimentally. The results indicated that the transmission spectra was highly dependent on the refractive index and the thickness of SiO(x)N(y). We found that the transmission peaks redshifted regularly along with the refractive index from 1.6 to 1.8, owing to the role of surface plasmon polaritons (SPP) coupling in the Au/SiO(x)N(y)/Au cascaded metallic structure. Simultaneously, a higher transmission efficiency and narrower transmission peak was obtained in Au/SiO2.1N0.3/Au cascaded metallic structure with small refractive index (1.6) than in Au/SiO0.6N1/Au cascaded metallic structure with large refractive index (1.8). When the thickness of SiO(x)N(y) changes from 0.2 to 0.4 microm, the shape of transmission spectra exhibits a large change. It was found that a higher transmission efficiency and narrower transmission peak was obtained in Au/SiO(x)N(y)/Au cascaded metallic structure with a thin dielectric film (0.2 microm), with the increase of SiO(x)N(y) film's thickness, the transmission peak gradually widened and disappeared finally. This effect is useful in applications of biochemical sensing and tunable integrated plasmonic devices in the middle-infrared region.

Quality indexes for selecting control materials of the nuclear reactors

International Nuclear Information System (INIS)

Martinez-Val, J.M.; Pena, J.; Esteban Naudin, A.

1981-01-01

Quality indexes are established and valued for selecting control materials, The requirements for accomplishing such purposes are explained with detailed analysis: absortion cross section must be as high as possible, adequate reactivity evolution versus depletion, good resistance to radiation, appropiate thermal stability, mechanical resistance and ductility, chemical compatibility with the environment, good heat transfer properties, abundant in the nature and low costs. At present Westinghouse desire to commercialize hafnium as control material shows the exciting task of looking for new materials controlling nuclear reactors. (auth.)

GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

Energy Technology Data Exchange (ETDEWEB)

Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

2010-07-15

GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

Directory of Open Access Journals (Sweden)

Yudi Darma

2008-03-01

Full Text Available Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at the Si clad surface. The first subband energy at the valence band of Si dot with Ge core has been measured as an energy shift at the top of the valence band density of state using XPS. The systematic shift of the valence band maximum towards higher binding energy with progressive deposition in the dot formation indicate the charging effect of dots and SiO2 layer by photoemission during measurements.

X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

Science.gov (United States)

Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

2018-06-01

Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

Return on Scientific Investment – RoSI: a PMO dynamical index proposal for scientific projects performance evaluation and management

Directory of Open Access Journals (Sweden)

Cristofer André Caous

2012-06-01

Full Text Available Objective: To propose a measure (index of expected risks to evaluateand follow up the performance analysis of research projects involvingfinancial and adequate structure parameters for its development.Methods: A ranking of acceptable results regarding researchprojects with complex variables was used as an index to gauge aproject performance. In order to implement this method the ulcerindex as the basic model to accommodate the following variableswas applied: costs, high impact publication, fund raising, and patentregistry. The proposed structured analysis, named here as RoSI(Return on Scientific Investment comprises a pipeline of analysis tocharacterize the risk based on a modeling tool that comprises multiplevariables interacting in semi-quantitatively environments. Results:This method was tested with data from three different projects in ourInstitution (projects A, B and C. Different curves reflected the ulcer indexes identifying the project that may have a minor risk (project C related to development and expected results according to initial or full investment. Conclusion: The results showed that this model contributes significantly to the analysis of risk and planning as well as to the definition of necessary investments that consider contingency actions with benefits to the different stakeholders: the investor or donor, the project manager and the researchers.

Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

NARCIS (Netherlands)

Sammak, A.; De Boer, W.B.; Nanver, L.K.

2012-01-01

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

Synthesis and characterization of erbium-doped SiO2-TiO2 thin films prepared by sol-gel and dip-coating techniques onto commercial glass substrates as a route for obtaining active GRadient-INdex materials

International Nuclear Information System (INIS)

Gómez-Varela, Ana I.; Castro, Yolanda; Durán, Alicia; De Beule, Pieter A.A.; Flores-Arias, María T.; Bao-Varela, Carmen

2015-01-01

In this work, SiO 2 -TiO 2 films doped with erbium were prepared by dip-coating sol-gel process onto commercial glass substrates. The surface morphology of the films was characterized using atomic force microscopy, while thickness, refractive index, extinction coefficient and porosity of the films were determined by ellipsometric measurements in a wavelength region of 400-1000 nm. Optical constants and porosity were found to vary with erbium concentration. The proof of principle presented in this paper is applicable to systems of different nature by tailoring the sol-gel precursors in such a way that active GRadient-INdex media described by a complex, parabolic-like refractive index distribution for beam shaping purposes is obtained. - Highlights: • Sol-gel route for preparation of active GRadient-INdex materials is proposed. • SiO 2 -TiO 2 films doped with erbium were prepared by dipping onto commercial glasses. • Morphological and optical characterization of the samples was performed. • Optical constants and porosity were found to vary with erbium concentration. • Refractive index diminishes with dopant content; the contrary occurs for porosity

Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

International Nuclear Information System (INIS)

Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

2001-01-01

The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

DLC-Si protective coatings for polycarbonates

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Damasceno J.C.

2003-01-01

Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

Shock index as a mortality predictor in patients with acute polytrauma

Institute of Scientific and Technical Information of China (English)

Kevin Fernando Montoya; Jos Daniel Charry; Juan Sebastin Calle-Toro; Luis Ramiro Niez; Gustavo Poveda

2015-01-01

Objective: To evaluate whether the shock index (SI), given by the formula SI = heart rate /systolic blood pressure (HR / SBP), is useful for predicting mortality at 24 h in trauma patients admitted to the emergency department of a university hospital in Colombia. Methods: A database of trauma patients admitted between January 2013 and December 2013 was constructed; the result according to the shock index was determined, generating a dichotomous variable with two groups: Group A (SI 0.9). Univariate analysis was performed. Results: A total of 666 patients were analyzed, 83.3% (555) had SI 0.9. The mean age for Groups A and B was 32.4 and 35.4 respectively. The average injury severity score for both groups was 9.6 and 17.6 respectively. Mortality at 24 h after injury for both groups was 3.1% (P = 0.032) and 59.5% (P = 0.027) respectively. Conclusions: An initial shock index greater than 0.9 implies a worse prognosis 24 h after injury. The shock index predicts mortality in multiple trauma patients in the emergency department, and is also a quick and applicable in all hospital.

Method for selection of optimal road safety composite index with examples from DEA and TOPSIS method.

Science.gov (United States)

Rosić, Miroslav; Pešić, Dalibor; Kukić, Dragoslav; Antić, Boris; Božović, Milan

2017-01-01

Concept of composite road safety index is a popular and relatively new concept among road safety experts around the world. As there is a constant need for comparison among different units (countries, municipalities, roads, etc.) there is need to choose an adequate method which will make comparison fair to all compared units. Usually comparisons using one specific indicator (parameter which describes safety or unsafety) can end up with totally different ranking of compared units which is quite complicated for decision maker to determine "real best performers". Need for composite road safety index is becoming dominant since road safety presents a complex system where more and more indicators are constantly being developed to describe it. Among wide variety of models and developed composite indexes, a decision maker can come to even bigger dilemma than choosing one adequate risk measure. As DEA and TOPSIS are well-known mathematical models and have recently been increasingly used for risk evaluation in road safety, we used efficiencies (composite indexes) obtained by different models, based on DEA and TOPSIS, to present PROMETHEE-RS model for selection of optimal method for composite index. Method for selection of optimal composite index is based on three parameters (average correlation, average rank variation and average cluster variation) inserted into a PROMETHEE MCDM method in order to choose the optimal one. The model is tested by comparing 27 police departments in Serbia. Copyright © 2016 Elsevier Ltd. All rights reserved.

The Strain Index (SI) and Threshold Limit Value (TLV) for Hand Activity Level (HAL): risk of carpal tunnel syndrome (CTS) in a prospective cohort.

Science.gov (United States)

Garg, A; Kapellusch, J; Hegmann, K; Wertsch, J; Merryweather, A; Deckow-Schaefer, G; Malloy, E J

2012-01-01

A cohort of 536 workers was enrolled from 10 diverse manufacturing facilities and was followed monthly for six years. Job physical exposures were individually measured. Worker demographics, medical history, psychosocial factors, current musculoskeletal disorders (MSDs) and nerve conduction studies (NCS) were obtained. Point and lifetime prevalence of carpal tunnel syndrome (CTS) at baseline (symptoms + abnormal NCS) were 10.3% and 19.8%. During follow-up, there were 35 new CTS cases (left, right or both hands). Factors predicting development of CTS included: job physical exposure (American conference of governmental industrial hygienists Threshold Limit Value (ACGIH TLV) for Hand Activity Level (HAL) and the Strain Index (SI)), age, BMI, other MSDs, inflammatory arthritis, gardening outside of work and feelings of depression. In the adjusted models, the TLV for HAL and the SI were both significant per unit increase in exposure with hazard ratios (HR) increasing up to a maximum of 5.4 (p = 0.05) and 5.3 (p = 0.03), respectively; however, similar to other reports, both suggested lower risk at higher exposures. Data suggest that the TLV for HAL and the SI are useful metrics for estimating exposure to biomechanical stressors. This study was conducted to determine how well the TLV for HAL and the SI predict risk of CTS using a prospective cohort design with survival analysis. Both the TLV for HAL and the SI were found to predict risk of CTS when adjusted for relevant covariates.

Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

Directory of Open Access Journals (Sweden)

Minghua Li

2013-01-01

Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

Composition and conductance distributions of single GeSi quantum rings studied by conductive atomic force microscopy combined with selective chemical etching.

Science.gov (United States)

Lv, Y; Cui, J; Jiang, Z M; Yang, X J

2013-02-15

Atomic force microscopy imaging combined with selective chemical etching is employed to quantitatively investigate three-dimensional (3D) composition distributions of single GeSi quantum rings (QRs). In addition, the 3D quantitative composition distributions and the corresponding conductance distributions are simultaneously obtained on the same single GeSi QRs by conductive atomic force microscopy combined with selective chemical etching, allowing us to investigate the correlations between the conductance and composition distributions of single QRs. The results show that the QRs' central holes have higher Ge content, but exhibit lower conductance, indicating that the QRs' conductance distribution is not consistent with their composition distribution. By comparing the topography, composition and conductance profiles of the same single QRs before and after different etching processes, it is found that the conductance distributions of GeSi QRs do not vary with the change of composition distribution. Instead, the QRs' conductance distributions are found to be consistent with their topographic shapes, which can be supposed to be due to the shape determined electronic structures.

Synchrotron radiation stimulated etching of SiO sub 2 thin films with a Co contact mask for the area-selective deposition of self-assembled monolayer

CERN Document Server

Wang, C

2003-01-01

The area-selective deposition of a self-assembled monolayer (SAM) was demonstrated on a pattern structure fabricated by synchrotron radiation (SR) stimulated etching of a SiO sub 2 thin film on the Si substrate. The etching was conducted by irradiating the SiO sub 2 thin film with SR through a Co contact mask and using a mixture of SF sub 6 + O sub 2 as the reaction gas. The SR etching stopped completely at the SiO sub 2 /Si interface. After the SR etching, the Si surface and the SiO sub 2 surface beneath the Co mask were evaluated by an atomic force microscope (AFM). A dodecene SAM was deposited on the Si surface, and trichlorosilane-derived SAMs (octadecyltrichlorosilane, and octenyltrichlorosilane) were deposited on the SiO sub 2 surface beneath the Co mask. The structure of the deposited SAMs showed a densely packed and well-ordered molecular architecture, which was characterized by infrared spectroscopy, ellipsometry, and water contact angle (WCA) measurements. (author)

Development of Readout Interconnections for the Si-W Calorimeter of SiD

Energy Technology Data Exchange (ETDEWEB)

Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

2012-09-14

The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

Characterization of Si(112) and In/Si(112) studied by SPA-LEED

Energy Technology Data Exchange (ETDEWEB)

Hoecker, Jan; Speckmann, Moritz; Schmidt, Thomas; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany)

2010-07-01

High index surfaces are of strong interest in todays research because of the possibility to grow low dimensional structures. It has for instance already been shown that the adsorption of Ga can induce the formation of 1D metal chains on Si(112) (cf. Snijders et al., PRB 72, 2005). In this work we investigated the clean Si(112) surface and the adsorption of In on Si(112) to establish an analogy to Ga/Si(112) using spot profile analyzing low energy electron diffraction (SPA-LEED). By means of reciprocal space mapping we determined the bare Si(112) surface to be decomposed into alternating (5512) and (111) facets in [1 anti 10] direction with (2 x 1) and (7 x 7) reconstruction, respectively (cf. Baski et al., Surf. Sci. 392, 1997). With SPA-LEED we were able to observe the decreasing intensity of the facet spots in-situ while depositing In on Si(112) and thus reveal the smoothening of the surface due to the deposition of In. At saturation coverage we found a (3.x1) reconstruction, where x is dependent on the deposition temperature and changes from x=7 at 400 C to x=5 at 500 C. This leads us to the assumption that the reconstruction is not incommensurate but a mixture of (3 x 1) and (4 x 1) building blocks, which is very similar to the super structure of Ga on Si(112).

Influence of load and reinforcement content on selected tribological properties of Al/SiC/Gr hybrid composites

Directory of Open Access Journals (Sweden)

Sandra Veličković

2018-04-01

Full Text Available Hybrid materials with the metal matrix are important engineering materials due to their outstanding mechanical and tribological properties. Here are presented selected tribological properties of the hybrid composites with the matrix made of aluminum alloy and reinforced by the silicon carbide and graphite particles. The tribological characteristics of such materials are superior to characteristics of the matrix – the aluminum alloy, as well as to characteristics of the classical metal-matrix composites with a single reinforcing material. Those characteristics depend on the volume fractions of the reinforcing components, sizes of the reinforcing particles, as well as on the fabrication process of the hybrid composites. The considered tribological characteristics are the friction coefficient and the wear rate as functions of the load levels and the volume fractions of the graphite and the SiC particles. The wear rate increases with increase of the load and the Gr particles content and with reduction of the SiC particles content. The friction coefficient increases with the load, as well as with the SiC particles content increase.

Corroboration of Raman and AFM mapping to study Si nanocrystals embedded in SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Rani, Ekta, E-mail: ades.ekta@gmail.com [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Ingale, Alka A. [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Chaturvedi, A. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Joshi, M.P.; Kukreja, L.M. [Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

2016-07-05

Raman and atomic force microscopy (AFM) mapping on the same selected area are used to get unique information about the morphology of Si nanocrystals (NCs) embedded in SiO{sub 2}, which is difficult to obtain by any other conventional technique. The sensitivity of Raman spectroscopy to surface/interface and confinement effects in NCs is effectively used to correlate the Raman intensity profile in Raman mapping with the topography obtained from AFM to understand that Si NCs are clustered in i) smaller clusters (∼100 nm) organized closely in two dimensions (2D) and ii) big (∼2 μm) three dimensional (3D) isolated clusters, although the growth is carried out to be multilayer (Si/SiO{sub 2}). Raman mapping performed by varying the focal spot along the depth shows stacking of larger (>∼60 Å) to smaller sizes (<∼40 Å) Si NCs from bottom to top for some clusters. To understand the observed morphologies, further study of specially grown Si–SiO{sub 2} nanocomposites is performed, which suggest formation of smaller Si NCs at the top due to annealing at 800 °C in Si rich SiO{sub 2} and possible existence of thermal gradient in an insulating matrix of SiO{sub 2.} Larger Si NCs are formed in the laser induced plume (plasma) itself. - Graphical abstract: a) Schematic showing the expected stacking of Si NCs obtained from Raman mapping, performed by changing focal spot along the depth, b) top, c) middle and d) bottom region of the cluster. - Highlights: • Methodology is developed to obtain Raman and AFM mapping at same selected area. • To get unique information, difficult to obtain using other conventional techniques. • Clusters (∼100 nm–2 μm) of Si nanocrystals embedded in SiO{sub 2} matrix are formed. • Stacking of Si nanocrystals from bottom to top (10–1 nm) is observed in some clusters. • Stacking of Si nanocrystals is understood as due to annealing and thermal gradient.

Precision Index in the Multivariate Context

Czech Academy of Sciences Publication Activity Database

Šiman, Miroslav

2014-01-01

Roč. 43, č. 2 (2014), s. 377-387 ISSN 0361-0926 R&D Projects: GA MŠk(CZ) 1M06047 Institutional support: RVO:67985556 Keywords : data depth * multivariate quantile * process capability index * precision index * regression quantile Subject RIV: BA - General Mathematics Impact factor: 0.274, year: 2014 http://library.utia.cas.cz/separaty/2014/SI/siman-0425059.pdf

Characteristics of terahertz wave modulation using wavelength-selective photoexcitation in pentacene/Si and TIPS pentacene/Si bilayers

Directory of Open Access Journals (Sweden)

Hyung Keun Yoo

2016-11-01

Full Text Available We demonstrate the characteristics of the optical control of terahertz (THz wave transmission in photoexcited bilayers of pentacene/Si and 6,13-bis(triisopropylsilylethynyl pentacene (TIPS pentacene/Si. The modulation efficiency is influenced significantly by the photoexcitation wavelength of the optical beams. Lower optical absorption of organic materials leads to higher modulation efficiency because the photocarriers excited on Si with a higher diffusion rate and mobility are far more instrumental in increasing the modulation than the excitons generated on the organic layers. Securing a sufficient depth for carrier diffusion on organic layers is also important for increasing the THz modulation efficiency. These findings may be useful for designing highly efficient and spectrally controllable THz wave modulators.

Statistical characteristics and stability index (si) of large-sized landslide dams around the world

International Nuclear Information System (INIS)

Iqbal, J.; Dai, F.; Raja, I.A.

2014-01-01

In the last few decades, landslide dams have received greater attention of researchers, as they have caused loss to property and human lives. Over 261 large-sized landslide dams from different countries of the world with volume greater than 1 x 105 m have been reviewed for this study. The data collected for this study shows that 58% of the catastrophic landslides were triggered by earthquakes and 21 % by rainfall, revealing that earthquake and rainfall are the two major triggers, accounting for 75% of large-sized landslide dams. These land-slides were most frequent during last two decades (1990-2010) throughout the world. The mean landslide dam volume of the studied cases was 53.39 x 10 m with mean dam height of 71.98 m, while the mean lake volume was found to be 156.62 x 10 m. Failure of these large landslide dams pose a severe threat to the property and people living downstream, hence immediate attention is required to deal with this problem. A stability index (SI) has been derived on the basis on 59 large-sized landslide dams (out of the 261 dams) with complete parametric information. (author)

Characterization of anodic SiO2 films on P-type 4H-SiC

International Nuclear Information System (INIS)

Woon, W.S.; Hutagalung, S.D.; Cheong, K.Y.

2009-01-01

The physical and electronic properties of 100-120-nm thick anodic silicon dioxide film grown on p-type 4H-SiC wafer and annealed at different temperatures (500, 600, 700, and 800 deg. C ) have been investigated and reported. Chemical bonding of the films has been analyzed by Fourier transform infra red spectroscopy. Smooth and defect-free film surface has been revealed under field emission scanning electron microscope. Atomic force microscope has been used to study topography and surface roughness of the films. Electronic properties of the film have been investigated by high frequency capacitance-voltage and current-voltage measurements. As the annealing temperature increased, refractive index, dielectric constant, film density, SiC surface roughness, effective oxide charge, and leakage current density have been reduced until 700 deg. C . An increment of these parameters has been observed after this temperature. However, a reversed trend has been demonstrated in porosity of the film and barrier height between conduction band edge of SiO 2 and SiC

Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Colina, M., E-mail: monica.colina.brito@upm.e [Centro Laser UPM, Univ. Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Molpeceres, C.; Holgado, M. [Centro Laser UPM, Univ. Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Gandia, J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Nos, O. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain); Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain)

2010-07-01

Laser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material surrounding the ablated area by means of Infrared-Visible Fourier transform spectrometry is proposed. Besides, in order to evaluate the material microstructure, Raman spectroscopy is employed as a complimentary technique. It was seen that the refractive index variation decreased as the distance from the center of the ablated groove was increased. Likewise, a clear transition from highly crystalline to amorphous material could be also observed as a function of the distance from the groove.

Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications

International Nuclear Information System (INIS)

Colina, M.; Molpeceres, C.; Holgado, M.; Gandia, J.; Nos, O.; Ocana, J.L.

2010-01-01

Laser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material surrounding the ablated area by means of Infrared-Visible Fourier transform spectrometry is proposed. Besides, in order to evaluate the material microstructure, Raman spectroscopy is employed as a complimentary technique. It was seen that the refractive index variation decreased as the distance from the center of the ablated groove was increased. Likewise, a clear transition from highly crystalline to amorphous material could be also observed as a function of the distance from the groove.

Computing a ground appropriateness index for route selection in permafrost regions

Directory of Open Access Journals (Sweden)

Chi Zhang

2017-10-01

Full Text Available The reasonable calculation of ground appropriateness index in permafrost region is the precondition of highway route design in permafrost region. The theory of knowledge base and fuzzy mathematics are applied, and the damage effect of permafrost is considered in the paper. Based on the idea of protecting permafrost the calculation method of ground appropriateness index is put forward. Firstly, based on the actual environment conditions, the paper determines the factors affecting the road layout in permafrost areas by qualitative and quantitative analysis, including the annual slope, the average annual ground temperature of permafrost, the amount of ice in frozen soil, and the interference engineering. Secondly, based on the knowledge base theory and the use of Delphi method, the paper establishes the knowledge base, the rule base of the permafrost region and inference mechanism. The method of selecting the road in permafrost region is completed and realized by using the software platform. Thirdly, taking the Tuotuo River to Kaixin Mountain section of permafrost region as an example, the application of the method is studied by using an ArcGIS platform. Results show that the route plan determined by the method of selecting the road in permafrost region can avoid the high temperature and high ice content area, conform the terrain changes and evade the heat disturbance among the existing projects. A reasonable route plan can be achieved, and it can provide the basis for the next engineering construction.

Reduction of Ag–Si electrical contact resistance by selective RF heating

International Nuclear Information System (INIS)

De Wijs, W-J A; Ljevar, S; Van de Sande, M J; De With, G

2016-01-01

Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s −1 . Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates. (paper)

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Science.gov (United States)

Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

2018-06-01

Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

Energy Technology Data Exchange (ETDEWEB)

Molpeceres, C. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain)], E-mail: carlos.molpeceres@upm.es; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain); Fernandez, S.; Gandia, J.J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Villar, F.; Nos, O.; Bertomeu, J. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

2009-03-15

Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

International Nuclear Information System (INIS)

Molpeceres, C.; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L.; Fernandez, S.; Gandia, J.J.; Villar, F.; Nos, O.; Bertomeu, J.

2009-01-01

Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

Study on Brewster angle thin film polarizer using hafnia-silica mixture as high-refractive-index material

Science.gov (United States)

Xu, Nuo; Zhu, Meiping; Sun, Jian; Chai, Yingjie; Kui, Yi; Zhao, Yuanan; Shao, Jianda

2018-02-01

Two kinds of polarizer coatings were prepared by electron beam evaporation, using HfO2-SiO2 mixture and HfO2 as the high-refractive-index materials, respectively. The HfO2-SiO2 mixture layer was implemented by coevaporating SiO2 and metal Hf, the materials were deposited at an oxygen atmosphere to achieve stoichiometric coatings. The certain HfO2 and SiO2 content ratio is controlled by adjusting the deposition rate of HfO2 and SiO2 using individual quartz crystal monitor. The spectral performance, surface and interfacial properties, as well as the laser-induced damage performance were studied and compared. Comparing with polarizer coating using HfO2 as high-refractive-index material, the polarizer coating using HfO2-SiO2 mixture as high-refractive-index material shows better performance with broader polarizing bandwidth, lower surface roughness, better interfacial property while maintaining high laser-induced damage threshold.

Structure and optical properties of aSiAl and aSiAlHx magnetron sputtered thin films

Directory of Open Access Journals (Sweden)

Annett Thøgersen

2016-03-01

Full Text Available Thin films of homogeneous mixture of amorphous silicon and aluminum were produced with magnetron sputtering using 2-phase Al–Si targets. The films exhibited variable compositions, with and without the presence of hydrogen, aSi1−xAlx and aSi1−xAlxHy. The structure and optical properties of the films were investigated using transmission electron microscopy, X-ray photoelectron spectroscopy, UV-VisNIR spectrometry, ellipsometry, and atomistic modeling. We studied the effect of alloying aSi with Al (within the range 0–25 at. % on the optical band gap, refractive index, transmission, and absorption. Alloying aSi with Al resulted in a non-transparent film with a low band gap (1 eV. Variations of the Al and hydrogen content allowed for tuning of the optoelectronic properties. The films are stable up to a temperature of 300 °C. At this temperature, we observed Al induced crystallization of the amorphous silicon and the presence of large Al particles in a crystalline Si matrix.

Selection of an evaluation index for water ecological civilizations of water-shortage cities based on the grey rough set

Science.gov (United States)

Zhang, X. Y.; Zhu, J. W.; Xie, J. C.; Liu, J. L.; Jiang, R. G.

2017-08-01

According to the characteristics and existing problems of water ecological civilization of water-shortage cities, the evaluation index system of water ecological civilization was established using a grey rough set. From six aspects of water resources, water security, water environment, water ecology, water culture and water management, this study established the prime frame of the evaluation system, including 28 items, and used rough set theory to undertake optimal selection of the index system. Grey correlation theory then was used for weightings in order that the integrated evaluation index system for water ecology civilization of water-shortage cities could be constituted. Xi’an City was taken as an example, for which the results showed that 20 evaluation indexes could be obtained after optimal selection of the preliminary framework of evaluation index. The most influential indices were the water-resource category index and water environment category index. The leakage rate of the public water supply pipe network, as well as the disposal, treatment and usage rate of polluted water, urban water surface area ratio, the water quality of the main rivers, and so on also are important. It was demonstrated that the evaluation index could provide an objectively reflection of regional features and key points for the development of water ecology civilization for cities with scarce water resources. It is considered that the application example has universal applicability.

Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy

Science.gov (United States)

Sarkar, Subhendu Sinha; Katiyar, Ajit K.; Sarkar, Arijit; Dhar, Achintya; Rudra, Arun; Khatri, Ravinder K.; Ray, Samit Kumar

2018-04-01

It is important to investigate the growth dynamics of Ge adatoms under different surface stress regimes of the patterned dielectric to control the selective growth of self-assembled Ge nanostructures on silicon. In the present work, we have studied the growth of Ge by molecular beam epitaxy on nanometer scale patterned Si3N4/Si(001) substrates generated using electron beam lithography. The pitch of the patterns has been varied to investigate its effect on the growth of Ge in comparison to un-patterned Si3N4. For the patterned Si3N4 film, Ge did not desorbed completely from the Si3N4 film and hence no site selective growth pattern is observed. Instead, depending upon the pitch, Ge growth has occurred in different growth modes around the openings in the Si3N4. For the un-patterned substrate, the morphology exhibits the occurrence of uniform 3D clustering of Ge adatoms on Si3N4 film. This variation in the growth modes of Ge is attributed to the variation of residual stress in the Si3N4 film for different pitch of holes, which has been confirmed theoretically through Comsol Multiphysics simulation. The variation in stress for different pitches resulted in modulation of surface energy of the Si3N4 film leading to the different growth modes of Ge.

SiO{sub 2} nanodot arrays using functionalized block copolymer templates and selective silylation

Energy Technology Data Exchange (ETDEWEB)

Kim, Su Min; Ku, Se Jin; Kim, Jin-Baek, E-mail: kjb@kaist.ac.kr [Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, 305-701 (Korea, Republic of)

2010-06-11

Silicon oxide nanodot arrays were fabricated using functionalized block copolymer templates and selective silylation. A polystyrene-b-poly(acrylic acid/acrylic anhydride) (PS-b-PAA/AN) thin film containing spherical nanodomains was used as a template to build nanoscopic silica structures. A PS-b-PAA/AN thin film was prepared by acid-catalyzed thermal deprotection of polystyrene-b-poly(tert-butyl acrylate) on an SU-8 resist film containing a photoacid generator. This resulting film has excellent solvent and thermal resistance due to crosslinked anhydride linkages in carboxyl-functionalized PAA/AN block domains. Silicon was introduced by spin-spraying of hexamethyldisilazane (HMDS) over the entire surface of a self-assembled PS-b-PAA/AN thin film. HMDS was selectively reacted with carboxylic acid groups in spherical domains of a PAA/AN block. SiO{sub 2} nanodot arrays were generated by oxygen reactive ion etching.

Correlations Between Arrangement of Reinforcing Particles and Mechanical Properties in Pressure Die Cast AlSi11-SiC Composites

Directory of Open Access Journals (Sweden)

Konopka Z.

2014-06-01

Full Text Available The work presents the investigation results concerning the structure of composite pressure die castings with AlSi11 alloy matrix reinforced with SiC particles. Examination has been held for composites containing 10 and 20 volume percent of SiC particles. The arrangement of the reinforcing particles within the matrix has been qualitatively assessed in specimens cut out of the castings. The index of distribution was determined on the basis of particle count in elementary measuring fields. The tensile strength, the yield point and elongation of the obtained composite were measured. Composite castings were produced at various values of the piston velocity in the second stage of injection, diverse intensification pressure values, and various injection gate width values. The regression equation describing the change of the considered arrangement particles index and mechanical properties were found as a function of the pressure die casting parameters. The infuence of particle arrangement in composite matrix on mechanical properties these material was examined and the functions of correlations between values were obtained. The conclusion gives the analysis and the interpretation of the obtained results.

Proceedings of a workshop on fish habitat suitability index models

Science.gov (United States)

Terrell, James W.

1984-01-01

decision techniques were used to develop and present information at the meeting. A synthesis of the resulting concepts, results, and recommendations follows this preface. Subsequent papers describe individual tests of selected HSI models. Most of the tests involved comparison of values from HSI models or Suitability index (SI) curves with standing crop, as required contractually. Time and budget constraints generally limited tests to the use of data previously collected for other purposes. These proceedings are intended to help persons responsible for the development, testing, or use of HSI models by increasing their understanding of potential uses and limitations of testing procedures and models based on aggregated Suitability Indices. Problems encountered when testing HSI models are described, model performance during tests is documents, and recommendations for future model development and testing presented by the participants are listed and interpreted.

Functional region prediction with a set of appropriate homologous sequences-an index for sequence selection by integrating structure and sequence information with spatial statistics

Science.gov (United States)

2012-01-01

Background The detection of conserved residue clusters on a protein structure is one of the effective strategies for the prediction of functional protein regions. Various methods, such as Evolutionary Trace, have been developed based on this strategy. In such approaches, the conserved residues are identified through comparisons of homologous amino acid sequences. Therefore, the selection of homologous sequences is a critical step. It is empirically known that a certain degree of sequence divergence in the set of homologous sequences is required for the identification of conserved residues. However, the development of a method to select homologous sequences appropriate for the identification of conserved residues has not been sufficiently addressed. An objective and general method to select appropriate homologous sequences is desired for the efficient prediction of functional regions. Results We have developed a novel index to select the sequences appropriate for the identification of conserved residues, and implemented the index within our method to predict the functional regions of a protein. The implementation of the index improved the performance of the functional region prediction. The index represents the degree of conserved residue clustering on the tertiary structure of the protein. For this purpose, the structure and sequence information were integrated within the index by the application of spatial statistics. Spatial statistics is a field of statistics in which not only the attributes but also the geometrical coordinates of the data are considered simultaneously. Higher degrees of clustering generate larger index scores. We adopted the set of homologous sequences with the highest index score, under the assumption that the best prediction accuracy is obtained when the degree of clustering is the maximum. The set of sequences selected by the index led to higher functional region prediction performance than the sets of sequences selected by other sequence

High density plasma via hole etching in SiC

International Nuclear Information System (INIS)

Cho, H.; Lee, K.P.; Leerungnawarat, P.; Chu, S.N.G.; Ren, F.; Pearton, S.J.; Zetterling, C.-M.

2001-01-01

Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF 6 /O 2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

Synthesis and characterization of erbium-doped SiO{sub 2}-TiO{sub 2} thin films prepared by sol-gel and dip-coating techniques onto commercial glass substrates as a route for obtaining active GRadient-INdex materials

Energy Technology Data Exchange (ETDEWEB)

Gómez-Varela, Ana I. [Microoptics and GRIN Optics Group, Department of Applied Physics, Faculty of Optics and Optometry and Faculty of Physics, Universidade de Santiago de Compostela, Campus Vida s/n, Santiago de Compostela E-15782 (Spain); Castro, Yolanda, E-mail: castro@icv.csic.es [Instituto de Cerámica y Vidrio (CSIC), Kelsen 5, Campus de Cantoblanco, Madrid 28049 (Spain); Durán, Alicia [Instituto de Cerámica y Vidrio (CSIC), Kelsen 5, Campus de Cantoblanco, Madrid 28049 (Spain); De Beule, Pieter A.A. [Applied Nano-Optics Laboratory, International Iberian Nanotechnology Laboratory, Braga 4715-330 (Portugal); Flores-Arias, María T. [Microoptics and GRIN Optics Group, Department of Applied Physics, Faculty of Optics and Optometry and Faculty of Physics, Universidade de Santiago de Compostela, Campus Vida s/n, Santiago de Compostela E-15782 (Spain); Bao-Varela, Carmen, E-mail: carmen.bao@usc.es [Microoptics and GRIN Optics Group, Department of Applied Physics, Faculty of Optics and Optometry and Faculty of Physics, Universidade de Santiago de Compostela, Campus Vida s/n, Santiago de Compostela E-15782 (Spain)

2015-05-29

In this work, SiO{sub 2}-TiO{sub 2} films doped with erbium were prepared by dip-coating sol-gel process onto commercial glass substrates. The surface morphology of the films was characterized using atomic force microscopy, while thickness, refractive index, extinction coefficient and porosity of the films were determined by ellipsometric measurements in a wavelength region of 400-1000 nm. Optical constants and porosity were found to vary with erbium concentration. The proof of principle presented in this paper is applicable to systems of different nature by tailoring the sol-gel precursors in such a way that active GRadient-INdex media described by a complex, parabolic-like refractive index distribution for beam shaping purposes is obtained. - Highlights: • Sol-gel route for preparation of active GRadient-INdex materials is proposed. • SiO{sub 2}-TiO{sub 2} films doped with erbium were prepared by dipping onto commercial glasses. • Morphological and optical characterization of the samples was performed. • Optical constants and porosity were found to vary with erbium concentration. • Refractive index diminishes with dopant content; the contrary occurs for porosity.

Differential modal delay measurements in a graded-index multimode fibre waveguide, using a single-mode fibre pro mode selection

International Nuclear Information System (INIS)

Sunak, H.R.D.; Soares, S.M.

1981-01-01

Differential model delay (DMD) measurements in graded-index multimode optical fibre waveguides, which are very promising for many types of communication system were carried out. These DMD measurements give a direct indication of the deviation of the refractive index profile, from the optimum value, at a given wavelength. For the first time, by using a single-mode fibre, a few guided modes in the graded-index fibre were selected, in two different ways: launching a few modes at the input end or selecting a few modes at the output end. By doing so important features of propagation in the fibre were revealed, especially the intermodal coupling that may exist. The importance of this determination of intermodal coupling or mode mixing, particularly when many fibres are joined together in a link, and the merits of DMD measurements in general and their importance for the production of high bandwidth graded-index fibres are discussed. (Author) [pt

Fluorination of Naturally Occurring N6-Benzyladenosine Remarkably Increased Its Antiviral Activity and Selectivity

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Vladimir E. Oslovsky

2017-07-01

Full Text Available Recently, we demonstrated that the natural cytokinin nucleosides N6-isopentenyladenosine (iPR and N6-benzyladenosine (BAPR exert a potent and selective antiviral effect on the replication of human enterovirus 71. In order to further characterize the antiviral profile of this class of compounds, we generated a series of fluorinated derivatives of BAPR and evaluated their activity on the replication of human enterovirus 71 in a cytopathic effect (CPE reduction assay. The monofluorination of the BAPR-phenyl group changed the selectivity index (SI slightly because of the concomitant high cell toxicity. Interestingly, the incorporation of a second fluorine atom resulted in a dramatic improvement of selectivity. Moreover, N6-trifluoromethylbenzyladenosine derivatives (9–11 exhibited also a very interesting profile, with low cytotoxicity observed. In particular, the analogue N6-(3-trifluoromethylbenzyl-adenosine (10 with a four-fold gain in potency as compared to BAPR and the best SI in the class represents a promising candidate for further development.

Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

International Nuclear Information System (INIS)

Khazaka, Rami; Portail, Marc; Vennéguès, Philippe; Alquier, Daniel; Michaud, Jean François

2015-01-01

Graphical abstract: In this contribution, we demonstrated the influence of the 3C-SiC layer on the subsequent growth of Si epilayers. We were able to give a direct evidence that the rotation in the Si epilayer of 90° around the growth direction occurs exactly on the termination of an antiphase boundary in the 3C-SiC layer as shown in the figure above. Thus, increasing the layer thickness of the 3C-SiC leads to a direct improvement of the crystalline quality of the subsequent Si epilayer. (a) Cross-section bright-field TEM image of the Si/3C-SiC layer stack along two 3C-SiC zone axes [1 −1 0] and [1 1 0] (equivalent to [1 −1 1] and [1 1 2] in Si, respectively), (b) dark field image selecting a (2 0 −2) electron diffraction spot indicated by the black circle in the SAED shown as inset, (c) dark field image selecting a (−1 1 −1) electron diffraction spot indicated by the black circle in the SAED shown as inset. The dotted white line in the images show the position of the defect in the 3C-SiC layer. - Abstract: This work presents a structural study of silicon (Si) thin films grown on cubic silicon carbide (3C-SiC) by chemical vapor deposition. The presence of grains rotated by 90° around the growth direction in the Si layer is directly related to the presence of antiphase domains on the 3C-SiC surface. We were able to provide a direct evidence that the 90° rotation of Si grains around the growth direction occurs exactly on the termination of antiphase boundaries (APBs) in 3C-SiC layer. Increasing the 3C-SiC thickness reduces the APBs density on 3C-SiC surface leading to a clear improvement of the uppermost Si film crystal quality. Furthermore, we observed by high resolution plan-view TEM images the presence of hexagonal Si domains limited to few nm in size. These hexagonal Si domains are inclusions in small Si grains enclosed in larger ones rotated by 90°. Finally, we propose a model of grains formation in the Si layer taking into consideration the effect

Selective scanning tunnelling microscope electron-induced reactions of single biphenyl molecules on a Si(100) surface.

Science.gov (United States)

Riedel, Damien; Bocquet, Marie-Laure; Lesnard, Hervé; Lastapis, Mathieu; Lorente, Nicolas; Sonnet, Philippe; Dujardin, Gérald

2009-06-03

Selective electron-induced reactions of individual biphenyl molecules adsorbed in their weakly chemisorbed configuration on a Si(100) surface are investigated by using the tip of a low-temperature (5 K) scanning tunnelling microscope (STM) as an atomic size source of electrons. Selected types of molecular reactions are produced, depending on the polarity of the surface voltage during STM excitation. At negative surface voltages, the biphenyl molecule diffuses across the surface in its weakly chemisorbed configuration. At positive surface voltages, different types of molecular reactions are activated, which involve the change of adsorption configuration from the weakly chemisorbed to the strongly chemisorbed bistable and quadristable configurations. Calculated reaction pathways of the molecular reactions on the silicon surface, using the nudge elastic band method, provide evidence that the observed selectivity as a function of the surface voltage polarity cannot be ascribed to different activation energies. These results, together with the measured threshold surface voltages and the calculated molecular electronic structures via density functional theory, suggest that the electron-induced molecular reactions are driven by selective electron detachment (oxidation) or attachment (reduction) processes.

Application of a modified selection index for honey bees (Hymenoptera: Apidae).

Science.gov (United States)

van Engelsdorp, D; Otis, G W

2000-12-01

Nine different genetic families of honey bees (Apis mellifera L.) were compared using summed z-scores (phenotypic values) and a modified selection index (Imod). Imod values incorporated both the phenotypic scores of the different traits and the economic weightings of these traits, as determined by a survey of commercial Ontario beekeepers. Largely because of the high weight all beekeepers place on honey production, a distinct difference between line rankings based on phenotypic scores and Imod scores was apparent, thereby emphasizing the need to properly weight the traits being evaluated to select bee stocks most valuable for beekeepers. Furthermore, when beekeepers who made >10% of their income from queen and nucleus colony sales assigned relative values to the traits used in the Imod calculations, the results differed from those based on weightings assigned by honey producers. Our results underscore the difficulties the North American beekeeping industry must overcome to devise effective methods of evaluating colonies for breeding purposes.

Evaluating the sustainable mining contractor selection problems: An imprecise last aggregation preference selection index method

Directory of Open Access Journals (Sweden)

Mohammad Panahi Borujeni

2017-01-01

Full Text Available The increasing complexity surrounding decision-making situations has made it inevitable for practitioners to apply ideas from a group of experts or decision makers (DMs instead of individuals. In a large proportion of recent studies, not enough attention has been paid to considering uncertainty in practical ways. In this paper, a hesitant fuzzy preference selection index (HFPSI method is proposed based on a new soft computing approach with risk preferences of DMs to deal with imprecise multi-criteria decision-making problems. Meanwhile, qualitative assessing criteria are considered in the process of the proposed method to help the DMs by providing suitable expressions of membership degrees for an element under a set. Moreover, the best alternative is selected based on considering the concepts of preference relation and hesitant fuzzy sets, simultaneously. Therefore, DMs' weights are determined according to the proposed hesitant fuzzy compromise solution technique to prevent judgment errors. Moreover, the proposed method has been extended based on the last aggregation method by aggregating the DMs' opinions during the last stage to avoid data loss. In this respect, a real case study about the mining contractor selection problem is provided to represent the effectiveness and efficiency of the proposed HFPSI method in practice. Then, a comparative analysis is performed to show the feasibility of the presented approach. Finally, sensitivity analysis is carried out to show the effect of considering the DMs' weights and last aggregation approach in a dispersion of the alternatives’ ranking values.

Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

International Nuclear Information System (INIS)

Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

2015-01-01

In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO 2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP–Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO 2 mask which in turn would have been a consequence of the initial process treatments. The direct InP–Si heterointerface can find applications in high efficiency and cost-effective Si based III–V semiconductor multijunction solar cells and optoelectronics integration. (paper)

Selective dry etching of silicon containing anti-reflective coating

Science.gov (United States)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

International Nuclear Information System (INIS)

Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

2008-01-01

We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

High-efficient photo-electron transport channel in SiC constructed by depositing cocatalysts selectively on specific surface sites for visible-light H{sub 2} production

Energy Technology Data Exchange (ETDEWEB)

Wang, Da; Peng, Yuan; Wang, Qi; Pan, Nanyan; Guo, Zhongnan; Yuan, Wenxia, E-mail: wxyuanwz@163.com [Department of Chemistry, School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

2016-04-18

Control cocatalyst location on a metal-free semiconductor to promote surface charge transfer for decreasing the electron-hole recombination is crucial for enhancing solar energy conversion. Based on the findings that some metals have an affinity for bonding with the specific atoms of polar semiconductors at a heterostructure interface, we herein control Pt deposition selectively on the Si sites of a micro-SiC photocatalyst surface via in-situ photo-depositing. The Pt-Si bond forming on the interface constructs an excellent channel, which is responsible for accelerating photo-electron transfer from SiC to Pt and then reducing water under visible-light. The hydrogen production is enhanced by two orders of magnitude higher than that of bare SiC, and 2.5 times higher than that of random-depositing nano-Pt with the same loading amount.

Silicate fertilization of tropical soils: silicon availability and recovery index of sugarcane

Directory of Open Access Journals (Sweden)

Mônica Sartori de Camargo

2013-10-01

Full Text Available Sugarcane is considered a Si-accumulating plant, but in Brazil, where several soil types are used for cultivation, there is little information about silicon (Si fertilization. The objectives of this study were to evaluate the silicon availability, uptake and recovery index of Si from the applied silicate on tropical soils with and without silicate fertilization, in three crops. The experiments in pots (100 L were performed with specific Si rates (0, 185, 370 and 555 kg ha-1 Si, three soils (Quartzipsamment-Q, 6 % clay; Rhodic Hapludox-RH, 22 % clay; and Rhodic Acrudox-RA, 68 % clay, with four replications. The silicon source was Ca-Mg silicate. The same Ca and Mg quantities were applied to all pots, with lime and/or MgCl2, when necessary. Sugarcane was harvested in the plant cane and first- and second-ratoon crops. The silicon rates increased soil Si availability and Si uptake by sugarcane and had a strong residual effect. The contents of soluble Si were reduced by harvesting and increased with silicate application in the following decreasing order: Q>RH>RA. The silicate rates promoted an increase in soluble Si-acetic acid at harvest for all crops and in all soils, except RA. The amounts of Si-CaCl2 were not influenced by silicate in the ratoon crops. The plant Si uptake increased according to the Si rates and was highest in RA at all harvests. The recovery index of applied Si (RI of sugarcane increased over time, and was highest in RA.

High performance a-Si solar cells and new fabrication methods for a-Si solar cells

Science.gov (United States)

Nakano, S.; Kuwano, Y.; Ohnishi, M.

1986-12-01

The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Directory of Open Access Journals (Sweden)

Wei-Ting eLai

2016-02-01

Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

A Risk-Free Protection Index Model for Portfolio Selection with Entropy Constraint under an Uncertainty Framework

Directory of Open Access Journals (Sweden)

Jianwei Gao

2017-02-01

Full Text Available This paper aims to develop a risk-free protection index model for portfolio selection based on the uncertain theory. First, the returns of risk assets are assumed as uncertain variables and subject to reputable experts’ evaluations. Second, under this assumption, combining with the risk-free interest rate we define a risk-free protection index (RFPI, which can measure the protection degree when the loss of risk assets happens. Third, note that the proportion entropy serves as a complementary means to reduce the risk by the preset diversification requirement. We put forward a risk-free protection index model with an entropy constraint under an uncertainty framework by applying the RFPI, Huang’s risk index model (RIM, and mean-variance-entropy model (MVEM. Furthermore, to solve our portfolio model, an algorithm is given to estimate the uncertain expected return and standard deviation of different risk assets by applying the Delphi method. Finally, an example is provided to show that the risk-free protection index model performs better than the traditional MVEM and RIM.

The AlSi10Mg samples produced by selective laser melting: single track, densification, microstructure and mechanical behavior

International Nuclear Information System (INIS)

Wei, Pei; Wei, Zhengying; Chen, Zhen; Du, Jun; He, Yuyang; Li, Junfeng; Zhou, Yatong

2017-01-01

Highlights: • The thermal behavior of AlSi10Mg molten pool was analyzed. • The SLM-processed sample with a relatively low surface roughness was obtained. • Effects of parameters on surface topography of scan track were investigated. • Effects of parameters on microstructure of parts were investigated. • Optimum processing parameters for AlSi10Mg SLM was obtained. - Abstract: This densification behavior and attendant microstructural characteristics of the selective laser melting (SLM) processed AlSi10Mg alloy affected by the processing parameters were systematically investigated. The samples with a single track were produced by SLM to study the influences of laser power and scanning speed on the surface morphologies of scan tracks. Additionally, the bulk samples were produced to investigate the influence of the laser power, scanning speed, and hatch spacing on the densification level and the resultant microstructure. The experimental results showed that the level of porosity of the SLM-processed samples was significantly governed by energy density of laser beam and the hatch spacing. The tensile properties of SLM-processed samples and the attendant fracture surface can be enhanced by decreasing the level of porosity. The microstructure of SLM-processed samples consists of supersaturated Al-rich cellular structure along with eutectic Al/Si situated at the cellular boundaries. The Si content in the cellular boundaries increases with increasing the laser power and decreasing the scanning speed. The hardness of SLM-processed samples was significantly improved by this fine microstructure compared with the cast samples. Moreover, the hardness of SLM-processed samples at overlaps was lower than the hardness observed at track cores.

The AlSi10Mg samples produced by selective laser melting: single track, densification, microstructure and mechanical behavior

Energy Technology Data Exchange (ETDEWEB)

Wei, Pei; Wei, Zhengying, E-mail: zywei@mail.xjtu.edu.cn; Chen, Zhen; Du, Jun; He, Yuyang; Li, Junfeng; Zhou, Yatong

2017-06-30

Highlights: • The thermal behavior of AlSi10Mg molten pool was analyzed. • The SLM-processed sample with a relatively low surface roughness was obtained. • Effects of parameters on surface topography of scan track were investigated. • Effects of parameters on microstructure of parts were investigated. • Optimum processing parameters for AlSi10Mg SLM was obtained. - Abstract: This densification behavior and attendant microstructural characteristics of the selective laser melting (SLM) processed AlSi10Mg alloy affected by the processing parameters were systematically investigated. The samples with a single track were produced by SLM to study the influences of laser power and scanning speed on the surface morphologies of scan tracks. Additionally, the bulk samples were produced to investigate the influence of the laser power, scanning speed, and hatch spacing on the densification level and the resultant microstructure. The experimental results showed that the level of porosity of the SLM-processed samples was significantly governed by energy density of laser beam and the hatch spacing. The tensile properties of SLM-processed samples and the attendant fracture surface can be enhanced by decreasing the level of porosity. The microstructure of SLM-processed samples consists of supersaturated Al-rich cellular structure along with eutectic Al/Si situated at the cellular boundaries. The Si content in the cellular boundaries increases with increasing the laser power and decreasing the scanning speed. The hardness of SLM-processed samples was significantly improved by this fine microstructure compared with the cast samples. Moreover, the hardness of SLM-processed samples at overlaps was lower than the hardness observed at track cores.

Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kruse, J. E.; Doundoulakis, G. [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Lymperakis, L. [Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Eftychis, S.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Adikimenakis, A.; Tsagaraki, K.; Androulidaki, M.; Konstantinidis, G. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P. [Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens (Greece); Koukoula, T.; Kehagias, Th.; Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

2016-06-14

We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

International Nuclear Information System (INIS)

Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

2005-01-01

The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

Energy Technology Data Exchange (ETDEWEB)

Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

2017-02-15

Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

Dissociation dynamics of anionic and excited neutral fragments of gaseous SiCl4 following Cl 2p and Si 2p core-level excitations

International Nuclear Information System (INIS)

Chen, J M; Lu, K T; Lee, J M; Chou, T L; Chen, H C; Chen, S A; Haw, S C; Chen, T H

2008-01-01

The state-selective dissociation dynamics for anionic and excited neutral fragments of gaseous SiCl 4 following Cl 2p and Si 2p core-level excitations were characterized by combining measurements of the photon-induced anionic dissociation, x-ray absorption and UV/visible dispersed fluorescence. The transitions of core electrons to high Rydberg states/doubly excited states in the vicinity of both Si 2p and Cl 2p ionization thresholds of gaseous SiCl 4 lead to a remarkably enhanced production of anionic, Si - and Cl - , fragments and excited neutral atomic, Si*, fragments. This enhancement via core-level excitation near the ionization threshold of gaseous SiCl 4 is explained in terms of the contributions from the Auger decay of doubly excited states, shake-modified resonant Auger decay, or/and post-collision interaction. These complementary results provide insight into the state-selective anionic and excited neutral fragmentation of gaseous molecules via core-level excitation.

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Directory of Open Access Journals (Sweden)

Jhovani Bornacelli

2013-01-01

Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Dislocation reduction in heteroepitaxial Ge on Si using SiO{sub 2} lined etch pits and epitaxial lateral overgrowth

Energy Technology Data Exchange (ETDEWEB)

Leonhardt, Darin; Han, Sang M. [Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2011-09-12

We report a technique that significantly reduces threading dislocations in Ge on Si heteroepitaxy. Germanium is first grown on Si and etched to produce pits in the surface where threading dislocations terminate. Further processing leaves a layer of SiO{sub 2} only within etch pits. Subsequent selective epitaxial Ge growth results in coalescence above the SiO{sub 2}. The SiO{sub 2} blocks the threading dislocations from propagating into the upper Ge epilayer. With annealed Ge films grown on Si, the said method reduces the defect density from 2.6 x 10{sup 8} to 1.7 x 10{sup 6} cm{sup -2}, potentially making the layer suitable for electronic and photovoltaic devices.

In vitro application of integrated selection index for screening drought tolerant genotypes in common wheat

Directory of Open Access Journals (Sweden)

Ezatollah FARSHADFAR

2016-10-01

Full Text Available This experiment was conducted on 20 wheat genotypes during 2010-2011 growing season at the Razi University, Kermanshah, Iran. A completely randomized design with six replications was used for callus induction and a 20 × 2 factorial experiment with three replications was used for response of genotypes to in vitro drought stress. ANOVA exhibited highly significant differences among the genotypes for callus growth rate, relative fresh mass growth, relative growth rate, callus water content, percent of callus chlorosis and proline content under stress condition (15 % PEG. PCA showed that the integrated selection index was correlated with callus growth index, relative fresh mass growth, relative growth rate and proline content indicating that these screening techniques can be useful for selecting drought tolerant genotypes. Screening drought tolerant genotypes and in vitro indicators of drought tolerance using mean rank, standard deviation of ranks and biplot analysis, discriminated genotypes 2, 18 and 10 as the most drought tolerant. Therefore they are recommended to be used as parents for genetic analysis, gene mapping and improvement of drought tolerance.

The Influence of Selective Laser Melting Parameters on Density and Mechanical Properties of AlSi10Mg

Directory of Open Access Journals (Sweden)

Raus A. A.

2016-01-01

Full Text Available Selective Laser Melting (SLM is one of the most effective powder bed technique in the additive Manufacturing (AM which able to fabricate functional metal parts directly from 3D Computer Aided Design (CAD file data. In this paper, the influence of SLM parameters, such as laser power, scanning speed and hatching distance on the density of AlSi10Mg samples are investigated using one factor at a time (OFAT. Furthermore, the optimum results are used to fabricate samples for hardness, tensile strength, and impact toughness test. It is revealed that AlSi10Mg parts fabricated by SLM achieving the best density of 99.13% at the value of 350 watts laser power, 1650 mm/s scanning speed and hatching distance 0.13mm, whereby resulted comparable and even better mechanical properties to those of conventionally HDPC A360F and HDPC A360T6 alloys although without any comprehensive post processing methods.

The Influence of Pressure Die Casting Parameters on Distribution of Reinforcing Particles in the AlSi11/10% SiC Composite

Directory of Open Access Journals (Sweden)

Pasieka A.

2013-09-01

Full Text Available The method of pressure die casting of composites with AlSi11 alloy matrix reinforced with 10 vol. % of SiC particles and the analysis of the distribution of particles within the matrix is presented. The composite castings were produced at various values of the piston velocity in the second stage of injection, at diverse intensification pressure values, and various injection gate width values. The distribution of particles over the entire cross-section of the tensile specimen is shown. The index of distribution was determined on the basis of particle count in elementary measuring fields. The regression equation describing the change of the considered index was found as a function of the pressure die casting parameters. The conclusion presents an analysis of the obtained results and their interpretation.

The Refractive Index Measurement Of Silicon Dioxide Thin Film by the Coupling Prism Method

International Nuclear Information System (INIS)

Budianto, Anwar; Hariyanto, Sigit; Subarkah

1996-01-01

Refractive index of silicon dioxide thin film that doped with phosphor (SiO 2 :P) above the pure silicon dioxide substrate has been measured by light coupling prism method. The method principle is focusing the light on coupling prism base so that the light propagates into the waveguide layer while the reflected one forms a mode in the observation plane. The SiO 2 thin film as waveguide layer has a refractive index that give the thick and refractive index relation. The He-Ne laser as light source has the wavelength λ 0,6328 μm. The refractive index measurement of the thin film with the substrate refractive index n sb = 1,47 and the thin film thick d = 2μm gives n g = 1,5534 ± 0,01136. This method can distinguish the refractive index of thin film about 6% to the refractive index of substrate

Application of Dexter’s soil physical quality index: an Irish case study

Directory of Open Access Journals (Sweden)

Fenton O.

2017-08-01

Full Text Available Historically, due to a lack of measured soil physical data, the quality of Irish soils was relatively unknown. Herein, we investigate the physical quality of the national representative profiles of Co. Waterford. To do this, the soil physical quality (SPQ S-Index, as described by Dexter (2004a,b,c using the S-theory (which seeks the inflection point of a soil water retention curve [SWRC], is used. This can be determined using simple (S-Indirect or complex (S-Direct soil physical data streams. Both are achievable using existing data for the County Waterford profiles, but until now, the suitability of this S-Index for Irish soils has never been tested. Indirect-S provides a generic characterisation of SPQ for a particular soil horizon, using simplified and modelled information (e.g. texture and SWRC derived from pedo-transfer functions, whereas Direct-S provides more complex site-specific information (e.g. texture and SWRC measured in the laboratory, which relates to properties measured for that exact soil horizon. Results showed a significant correlation between S-Indirect (Si and S-Direct (Sd. Therefore, the S-Index can be used in Irish soils and presents opportunities for the use of Si at the national scale. Outlier horizons contained >6% organic carbon (OC and bulk density (Bd values <1 g/cm3 and were not suitable for Si estimation. In addition, the S-Index did not perform well on excessively drained soils. Overall correlations of Si. with Bd and of Si. with OC% for the dataset were detected. Future work should extend this approach to the national scale dataset in the Irish Soil Information System.

Method of determining dispersion dependence of refractive index of nanospheres building opals

Science.gov (United States)

Kępińska, Mirosława; Starczewska, Anna; Duka, Piotr

2017-11-01

The method of determining dispersion dependence of refractive index of nanospheres building opals is presented. In this method basing on angular dependences of the spectral positions of Bragg diffraction minima on transmission spectra for opal series of known spheres diameter, the spectrum of effective refractive index for opals and then refractive index for material building opal's spheres is determined. The described procedure is used for determination of neff(λ) for opals and nsph(λ) for material which spheres building investigated opals are made of. The obtained results are compared with literature data of nSiO2(λ) considered in the analysis and interpretation of extremes related to the light diffraction at (hkl) SiO2 opal planes.

Phase formation in Mg-Sn-Si and Mg-Sn-Si-Ca alloys

Energy Technology Data Exchange (ETDEWEB)

Kozlov, A.; Groebner, J. [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany); Schmid-Fetzer, R., E-mail: schmid-fetzer@tu-clausthal.de [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany)

2011-02-17

Research highlights: > The solidification paths of ternary and quaternary alloys are analyzed in detail, using the tool of thermodynamic calculations. > The precipitation sequence of phases and their amounts compare well with the microstructure of alloys. > The most efficient comparison to the experimental thermal analysis data is done by calculation of the enthalpy variation with temperature. > The viability of a procedure for the selection of multicomponent key samples is demonstrated for the development of the Mg-Ca-Si-Sn phase diagram. - Abstract: Experimental work is done and combined with the Calphad method to generate a consistent thermodynamic description of the Mg-Ca-Si-Sn quaternary system, validated for Mg-rich alloys. The viability of a procedure for the selection of multicomponent key samples is demonstrated for this multicomponent system. Dedicated thermal analysis with DTA/DSC on sealed samples is performed and the microstructure of slowly solidified alloys is analyzed using SEM/EDX. The thermodynamic description and phase diagram of the ternary Mg-Si-Sn system, developed in detail also in this work, deviates significantly from a previous literature proposal. The phase formation in ternary and quaternary alloys is analyzed using the tool of thermodynamic equilibrium and Scheil calculations for the solidification paths and compared with present experimental data. The significant ternary/quaternary solid solubilities of pertinent intermetallic phases are quantitatively introduced in the quaternary Mg-Ca-Si-Sn phase diagram and validated by experimental data.

InP-based photonic integrated circuit platform on SiC wafer.

Science.gov (United States)

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Fine-structured aluminium products with controllable texture by selective laser melting of pre-alloyed AlSi10Mg powder

International Nuclear Information System (INIS)

Thijs, Lore; Kempen, Karolien; Kruth, Jean-Pierre; Van Humbeeck, Jan

2013-01-01

Graphical abstract: -- Abstract: This study shows that AlSi10Mg parts with an extremely fine microstructure and a controllable texture can be obtained through selective laser melting (SLM). Selective laser melting creates complex functional products by selectively melting powder particles of a powder bed layer after layer using a high-energy laser beam. The high-energy density applied to the material and the additive character of the process result in a unique material structure. To investigate this material structure, cube-shaped SLM parts were made using different scanning strategies and investigated by microscopy, X-ray diffraction and electron backscattered diffraction. The experimental results show that the high thermal gradients occurring during SLM lead to a very fine microstructure with submicron-sized cells. Consequently, the AlSi10Mg SLM products have a high hardness of 127 ± 3 Hv0.5 even without the application of a precipitation hardening treatment. Furthermore, due to the unique solidification conditions and the additive character of the process, a morphological and crystallographic texture is present in the SLM parts. Thanks to the knowledge gathered in this paper on how this texture is formed and how it depends on the process parameters, this texture can be controlled. A strong fibrous 〈1 0 0〉 texture can be altered into a weak cube texture along the building and scanning directions when a rotation of 90° of the scanning vectors within or between the layers is applied

Generation of J_0-Bessel-Gauss beam by a heterogeneous refractive index map

KAUST Repository

San Roman Alerigi, Damian

2012-07-01

In this paper, we present the theoretical studies of a refractive index map to implement a Gauss to a J0-Bessel-Gauss convertor. We theoretically demonstrate the viability of a device that could be fabricated on a Si/Si1-yOy/Si1-x-yGexCy platform or by photo-refractive media. The proposed device is 200 ?m in length and 25 ?m in width, and its refractive index varies in controllable steps across the light propagation and transversal directions. The computed conversion efficiency and loss are 90%, and -0.457 dB, respectively. The theoretical results, obtained from the beam conversion efficiency, self-regeneration, and propagation through an opaque obstruction, demonstrate that a two-dimensional (2D) graded index map of the refractive index can be used to transform a Gauss beam into a J0-Bessel-Gauss beam. To the best of our knowledge, this is the first demonstration of such beam transformation by means of a 2D index-mapping that is fully integrable in silicon photonics based planar lightwave circuits (PLCs). The concept device is significant for the eventual development of a new array of technologies, such as micro optical tweezers, optical traps, beam reshaping and nonlinear beam diode lasers. © 2012 Optical Society of America.

Generation of J_0-Bessel-Gauss beam by a heterogeneous refractive index map

KAUST Repository

San Roman Alerigi, Damian; Alsunaidi, Mohammad; Ben Slimane, Ahmed; Ng, Tien Khee; Ooi, Boon S.; Zhang, Yaping

2012-01-01

In this paper, we present the theoretical studies of a refractive index map to implement a Gauss to a J0-Bessel-Gauss convertor. We theoretically demonstrate the viability of a device that could be fabricated on a Si/Si1-yOy/Si1-x-yGexCy platform or by photo-refractive media. The proposed device is 200 ?m in length and 25 ?m in width, and its refractive index varies in controllable steps across the light propagation and transversal directions. The computed conversion efficiency and loss are 90%, and -0.457 dB, respectively. The theoretical results, obtained from the beam conversion efficiency, self-regeneration, and propagation through an opaque obstruction, demonstrate that a two-dimensional (2D) graded index map of the refractive index can be used to transform a Gauss beam into a J0-Bessel-Gauss beam. To the best of our knowledge, this is the first demonstration of such beam transformation by means of a 2D index-mapping that is fully integrable in silicon photonics based planar lightwave circuits (PLCs). The concept device is significant for the eventual development of a new array of technologies, such as micro optical tweezers, optical traps, beam reshaping and nonlinear beam diode lasers. © 2012 Optical Society of America.

Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

International Nuclear Information System (INIS)

Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

2013-01-01

We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

Science.gov (United States)

Volk, Christian; Martins, Frederico; Malinowski, Filip; Marcus, Charles M.; Kuemmeth, Ferdinand

Spin qubits based on gate-defined quantum dots are promising systems for realizing quantum computation. Due to their low concentration of nuclear-spin-carrying isotopes, Si/SiGe heterostructures are of particular interest. While high fidelities have been reported for single-qubit and two-qubit gate operations, qubit initialization and measurement times are relatively slow. In order to develop fast read-out techniques compatible with the operation of spin qubits, we characterize double and triple quantum dots confined in undoped Si/Si0.7Ge0.3 heterostructures using accumulation and depletion gates and a nearby RF charge sensor dot. We implement a RF reflectometry technique that allows single-shot charge read-out at integration times on the order of a few μs. We show our recent advancement towards implementing spin qubits in these structures, including spin-selective single-shot read-out.

Near-surface segregation in irradiated Ni3Si

International Nuclear Information System (INIS)

Wagner, W.; Rehn, L.E.; Wiedersich, H.

1982-01-01

The radiation-induced growth of Ni 3 Si films on the surfaces of Ni(Si) alloys containing = 3 Si phase has been observed. Post-irradiation depth profiling by Auger electron spectroscopy, as well as in situ analysis by high-resolution Rutherford backscattering spectrometry, reveals Si-enrichment at the surfaces of Ni(Si) alloys in excess of stoichiometric Ni 3 Si during irradiation. Thin, near-surface layers with silicon concentrations of 28 to 30 at.% are observed, and even higher Si enrichment is found in the first few atom layers. Transmission electron microscopy and selected area-electron diffraction were employed to characterize these Si-enriched layers. A complex, multiple-spot diffraction pattern is observed superposed on the diffraction pattern of ordered Ni 3 Si. The d-spacings obtained from the extra spots are consistent with those of the orthohexagonal intermetallic compound Ni 5 Si 2 . (author)

Ni3Si(Al)/a-SiOx core shell nanoparticles: characterization, shell formation, and stability

Science.gov (United States)

Pigozzi, G.; Mukherji, D.; Gilles, R.; Barbier, B.; Kostorz, G.

2006-08-01

We have used an electrochemical selective phase dissolution method to extract nanoprecipitates of the Ni3Si-type intermetallic phase from two-phase Ni-Si and Ni-Si-Al alloys by dissolving the matrix phase. The extracted nanoparticles are characterized by transmission electron microscopy, energy-dispersive x-ray spectrometry, x-ray powder diffraction, and electron powder diffraction. It is found that the Ni3Si-type nanoparticles have a core-shell structure. The core maintains the size, the shape, and the crystal structure of the precipitates that existed in the bulk alloys, while the shell is an amorphous phase, containing only Si and O (SiOx). The shell forms around the precipitates during the extraction process. After annealing the nanoparticles in nitrogen at 700 °C, the tridymite phase recrystallizes within the shell, which remains partially amorphous. In contrast, on annealing in air at 1000 °C, no changes in the composition or the structure of the nanoparticles occur. It is suggested that the shell forms after dealloying of the matrix phase, where Si atoms, the main constituents of the shell, migrate to the surface of the precipitates.

Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

Science.gov (United States)

Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

2013-07-01

The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

ATLASGAL-selected massive clumps in the inner Galaxy. II. Characterisation of different evolutionary stages and their SiO emission

Science.gov (United States)

Csengeri, T.; Leurini, S.; Wyrowski, F.; Urquhart, J. S.; Menten, K. M.; Walmsley, M.; Bontemps, S.; Wienen, M.; Beuther, H.; Motte, F.; Nguyen-Luong, Q.; Schilke, P.; Schuller, F.; Zavagno, A.; Sanna, C.

2016-02-01

Context. The processes leading to the birth of high-mass stars are poorly understood. The key first step to reveal their formation processes is characterising the clumps and cores from which they form. Aims: We define a representative sample of massive clumps in different evolutionary stages selected from the APEX Telescope Large Area Survey of the Galaxy (ATLASGAL), from which we aim to establish a census of molecular tracers of their evolution. As a first step, we study the shock tracer, SiO, mainly associated with shocks from jets probing accretion processes. In low-mass young stellar objects (YSOs), outflow and jet activity decreases with time during the star formation processes. Recently, a similar scenario was suggested for massive clumps based on SiO observations. Here we analyse observations of the SiO (2-1) and (5-4) lines in a statistically significant sample to constrain the change of SiO abundance and the excitation conditions as a function of evolutionary stage of massive star-forming clumps. Methods: We performed an unbiased spectral line survey covering the 3-mm atmospheric window between 84-117 GHz with the IRAM 30 m telescope of a sample of 430 sources of the ATLASGAL survey, covering various evolutionary stages of massive clumps. A smaller sample of 128 clumps has been observed in the SiO (5-4) transition with the APEX telescope to complement the (2-1) line and probe the excitation conditions of the emitting gas. We derived detection rates to assess the star formation activity of the sample, and we estimated the column density and abundance using both an LTE approximation and non-LTE calculations for a smaller subsample, where both transitions have been observed. Results: We characterise the physical properties of the selected sources, which greatly supersedes the largest samples studied so far, and show that they are representative of different evolutionary stages. We report a high detection rate of >75% of the SiO (2-1) line and a >90% detection

Topography development on selected inert gas and self-ion bombarded Si

International Nuclear Information System (INIS)

Vishnyakov, V.; Carter, G.; Goddard, D.T.; Nobes, M.J.

1995-01-01

An AFM and SEM study of the topography induced by 20 keV Si + , Ar + and Xe + ion bombardment of Si at 45 o incidence angles and for ion fluences between 10 17 and 10 20 cm -2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si + irradiation generates no repetitive micrometre scale structures. Xe + irradiation produces well developed transverse waves while Ar + irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified. (author)

Biomedical bandpass filter for fluorescence microscopy imaging based on TiO2/SiO2 and TiO2/MgF2 dielectric multilayers

International Nuclear Information System (INIS)

Butt, M A; Fomchenkov, S A; Verma, P; Khonina, S N; Ullah, A

2016-01-01

We report a design for creating a multilayer dielectric optical filters based on TiO 2 and SiO 2 /MgF 2 alternating layers. We have selected Titanium dioxide (TiO 2 ) for high refractive index (2.5), Silicon dioxide (SiO 2 ) and Magnesium fluoride (MgF 2 ) as a low refractive index layer (1.45 and 1.37) respectively. Miniaturized visible spectrometers are useful for quick and mobile characterization of biological samples. Such devices can be fabricated by using Fabry-Perot (FP) filters consisting of two highly reflecting mirrors with a central cavity in between. Distributed Bragg Reflectors (DBRs) consisting of alternating high and low refractive index material pairs are the most commonly used mirrors in FP filters, due to their high reflectivity. However, DBRs have high reflectivity for a selected range of wavelengths known as the stopband of the DBR. This range is usually much smaller than the sensitivity range of the spectrometer range. Therefore a bandpass filters are required to restrict wavelength outside the stopband of the FP DBRs. The proposed filter shows a high quality with average transmission of 97.4% within the passbands and the transmission outside the passband is around 4%. Special attention has been given to keep the thickness of the filters within the economic limits. It can be suggested that these filters are exceptional choice for florescence imaging and Endoscope narrow band imaging. (paper)

Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

Apoptosis and reduced cell proliferation of HL-60 cell line caused by human telomerase reverse transcriptase inhibition by siRNA.

Science.gov (United States)

Miri-Moghaddam, Ebrahim; Deezagi, Abdolkhaleg; Soheili, Zahra Sohaila; Shariati, Parvin

2010-01-01

The close correlation between telomerase activity and human telomerase reverse transcriptase (hTERT) expression has made hTERT to be considered as a selective molecular target for human cancer therapy. In this study, the ability of short-interfering RNA (siRNA) to downregulate hTERT expression and its correlation with cell growth and apoptosis in the promyelocytic cell line HL-60 was evaluated. hTERT siRNA was designed and transfected to HL-60. hTERT mRNA expression, cell proliferation and apoptotic cells were measured. The results indicated that hTERT siRNA resulted in 97.2 ± 0.6% downregulation of the hTERT mRNA content; inhibition of the cell proliferation rate was about 52.8 ± 2.3% and the apoptotic index of cells was 30.5 ± 1.5%. hTERT plays an essential role in cell proliferation and control of the viability of leukemic cells, thus promising the development of drugs for leukemia. Copyright © 2010 S. Karger AG, Basel.

Selective Dispersive Solid Phase Extraction of Ser-traline Using Surface Molecularly Imprinted Polymer Grafted on SiO2/Graphene Oxide

Directory of Open Access Journals (Sweden)

Faezeh Khalilian

2017-01-01

Full Text Available A surface molecularly imprinted dispersive solid phase extraction coupled with liquid chromatography–ultraviolet detection is proposed as a selective and fast clean-up technique for the determination of sertraline in biological sample. Surface sertraline-molecular imprinted polymer was grafted and synthesized on the SiO2/graphene oxide surface. Firstly SiO2 was coated on synthesized graphene oxide sheet using sol-gel technique. Prior to polymerization, the vinyl group was incorporated on to the surface of SiO2/graphene oxide to direct selective polymerization on the surface. Methacrylic acid, ethylene glycol dimethacrylate and ethanol were used as monomer, cross-linker and progen, respectively. Non-imprinted polymer was also prepared for comparing purposes. The properties of the molecular imprinted polymer were characterized using field emission-scanning electron microscopy and Fourier transform infrared spectroscopy methods. The surface molecular imprinted polymer was utilized as an adsorbent of dispersive solid phase extraction for separation and preconcentration of sertraline. The effects of the different parameters influencing the extraction efficiency, such as sample pH were investigated and optimized. The specificity of the molecular imprinted polymer over the non-imprinted polymer was examined in absence and presence of competitive drugs. Sertraline calibration curve showed linearity in the ranges 1–500 µg L-1. The limits of detection and quantification under optimized conditions were obtained 0.2 and 0.5 µg L-1. The within-day and between-day relative standard deviations (n=3 were 4.3 and 7.1%, respectively. Furthermore, the relative recoveries for spiked biological samples were above 92%.

Excitation and deexcitation of the Si-H stretching mode in a Si:H with picosecond free electron laser pulses

International Nuclear Information System (INIS)

Xu, Z.; Fauchet, M.; Rella, C.W.

1995-01-01

Hydrogen in amorphous and crystalline silicon has been the topic of intense theoretical and experimental investigations for more than one decade. To better understand how the Si-H bonds interact with the Si matrix and how they can be broken, it would be useful to excite selectively these bonds and monitor the energy flow from the Si-H bonds into the bulk Si modes. One attractive way of exciting the Si-H modes selectively is with an infrared laser tuned to a Si-H vibrational mode. Unfortunately, up to now, this type of experiment had not been possible because of the lack of a laser producing intense, ultrashort pulses that are tunable in the mid infrared. In this presentation, we report the first measurement where a 1 picosecond long laser pulse was used to excite the Si-H stretching modes near 2000 cm -1 and another identical laser pulse was used to measure the deexcitation from that specific vibrational mode. The laser was the Stanford free electron laser generating ∼1 ps-long pulses, tunable in the 5 μm region and focussed to an intensity of ∼1 GW/cm 2 . The pump-probe measurements were performed in transmission at room temperature on several 2 μm thick a-Si:H films deposited on c-Si. Samples with predominant Si-H 1 modes, predominant Si-H n>1 modes and with a mixture of modes were prepared. The laser was tuned on resonance with either of these modes. Immediately after excitation, we observe a bleaching of the infrared absorption, which can be attributed to excitation of the Si-H mode. Beaching is expected since, as a result of anharmonicity, the detuning between the (E 3 - E 2 ) resonance and the (E 2 - E 1 ) resonance is larger than the laser bandwidth. Note that despite the anharmonicity, it should be possible to climb the vibrational ladder due to power broadening

Synthesis and optical characterization of C-SiO2 and C-NiO sol-gel composite films for use as selective solar absorbers

CSIR Research Space (South Africa)

Makiwa, G

2008-08-01

Full Text Available The authors present a cheaper and environmentally friendly method to fabricate efficient spectrally selective solar absorber materials. The sol-gel technique was used to fabricate carbon-silica (C-SiO2) and carbon-nickel oxide (C-NiO) composite...

XPS and EELS characterization of Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Grosvenor, A.P., E-mail: andrew.grosvenor@usask.ca [Department of Chemistry, University of Saskatchewan, Saskatoon, SK S7N 5C9 (Canada); Bellhouse, E.M., E-mail: erika.bellhouse@arcelormittal.com [Global R & D—Hamilton, ArcelorMittal Dofasco, 1330 Burlington St. E, Hamilton, ON L8N 3J5 (Canada); Korinek, A., E-mail: korinek@mcmaster.ca [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada); Bugnet, M., E-mail: bugnetm@mcmaster.ca [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada); McDermid, J.R., E-mail: mcdermid@mcmaster.ca [Steel Research Centre, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada)

2016-08-30

Graphical abstract: XPS and EELS spectra were acquired from Mn2Al2O4, MnSiO3 and Mn2SiO4 standards and unique features identified that will allow unambiguous identification of these compounds when studying the selective oxidation of advanced steels. - Highlights: • Mn2Al2O4, MnSiO3 and Mn2SiO4 standards were synthesized and characterized using both XPS and EELS. • Unique features in both the XPS high resolution and EELS spectra were identified for all compounds. • The spectra can be used to identify these compounds when studying the selective oxidation of steels. - Abstract: X-ray Photoelectron Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) are strong candidate techniques for characterizing steel surfaces and substrate-coating interfaces when investigating the selective oxidation and reactive wetting of advanced high strength steels (AHSS) during the continuous galvanizing process. However, unambiguous identification of ternary oxides such as Mn{sub 2}SiO{sub 4}, MnSiO{sub 3}, and MnAl{sub 2}O{sub 4} by XPS or EELS, which can play a significant role in substrate reactive wetting, is difficult due to the lack of fully characterized standards in the literature. To resolve this issue, samples of Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4} were synthesized and characterized by XPS and EELS. The unique features of the XPS and EELS spectra for the Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4} standards were successfully derived, thereby allowing investigators to fully differentiate and identify these oxides at the surface and subsurface of Mn, Si and Al alloyed AHSS using these techniques.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

Science.gov (United States)

Pramann, Axel; Rienitz, Olaf

2016-06-07

A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

Split-hand index for the diagnosis of amyotrophic lateral sclerosis.

Science.gov (United States)

Menon, Parvathi; Kiernan, Matthew C; Yiannikas, Con; Stroud, Jill; Vucic, Steve

2013-02-01

Preferential wasting of the thenar group of muscles, the split hand sign, appears to be a specific feature of ALS. The present study developed a novel split-hand index (SI) and assessed its diagnostic utility in ALS. One hundred and seventy consecutive patients with neuromuscular symptoms (44 ALS, 126 patients with other neuromuscular disorders) were prospectively recruited according to standards for reporting of diagnostic accuracy (STARD) criteria. The SI was derived by dividing the product of the compound muscle action potential (CMAP) amplitude recorded over the first dorsal interosseous and abductor pollicis brevis by the CMAP amplitude recorded over the abductor digiti minimi. The SI was significantly reduced in ALS patients (ALS 3.5 ± 0.6; patients with other neuromuscular disorders 9.1 ± 0.3, P differentiated ALS from patients with other neuromuscular disorders (area under curve ALS 0.83, P differentiates ALS from mimic disorders. The split-hand index is a simple measure that could be utilized in a standard neurophysiology setting. A reduction in SI distinguishes ALS from mimic disorders, potentially facilitating an earlier diagnosis of ALS. Copyright © 2012 International Federation of Clinical Neurophysiology. All rights reserved.

Determination of Selection Index of Cocoa (Theobroma Cacao L.) Yield Traits Using Regression Methods

OpenAIRE

Setyawan, Bayu; Taryono; Mitrowihardjo, Suyadi

2016-01-01

The increasing chocolate consumption has not been followed by growing production of dry cocoa beans. In order to support the increase in cocoa production, planting materials with high yield are needed. The objective of this research was to determine the components of cocoa traits affecting weight of dry cocoa beans, and set a selection index for superior cocoa trees. The experiment material were four cocoa hybrid populations of which their family ancestry were unknown, and were planted on Sam...

Methanation on mass-selected Ru nanoparticles on a planar SiO₂ model support: The importance of under-coordinated sites

DEFF Research Database (Denmark)

Masini, Federico; Strebel, Christian Ejersbo; McCarthy, David Norman

2013-01-01

Mass-selected Ru nanoparticles were deposited onto planar SiO2 support and their capability for the methanation reaction investigated. The catalytic activity for the methanation reaction at 100mbar under hydrogen rich conditions (1:99 CO/H2 ratio) was measured as a function of particle size. We f...

High index glass thin film processing for photonics and photovoltaic (PV) applications

Science.gov (United States)

Ogbuu, Okechukwu Anthony

subsequently transferred into glass and polymer thin films via conformal wet etching. High refractive index chalcogenide glass (n = 2.6) thin films with composition As20Se80 was selected for backside LSG material due to their attractive properties. We developed an optimized integration protocol for LSG integration and successfully integrated these LSG structures at the back side of both 30 microm c-Si solar cells and standalone 30 microm c-Si wafers. Optical and electrical characterization of LSG on thin c-Si cells shows that LSG structures create higher absorption enhancement and external quantum efficiency at long wavelengths.

BIBLIOGRAPHY ON DEAFNESS, A SELECTED INDEX.

Science.gov (United States)

FELLENDORF, GEORGE W.; AND OTHERS

APPROXIMATELY 3,200 REFERENCES ARE LISTED BY AUTHOR AND GROUPED ACCORDING TO SUBJECT. ALL REFERENCES ARE ARTICLES FROM "THE VOLTA REVIEW," 1899 TO 1965, OR "THE AMERICAN ANNALS OF THE DEAF," 1847 TO 1965. AN AUTHOR INDEX IS INCLUDED. THIS DOCUMENT WAS PUBLISHED BY THE ALEXANDER GRAHAM BELL ASSOCIATION FOR THE DEAF, INC., THE…

Ni(3)Si(Al)/a-SiO(x) core-shell nanoparticles: characterization, shell formation, and stability.

Science.gov (United States)

Pigozzi, G; Mukherji, D; Gilles, R; Barbier, B; Kostorz, G

2006-08-28

We have used an electrochemical selective phase dissolution method to extract nanoprecipitates of the Ni(3)Si-type intermetallic phase from two-phase Ni-Si and Ni-Si-Al alloys by dissolving the matrix phase. The extracted nanoparticles are characterized by transmission electron microscopy, energy-dispersive x-ray spectrometry, x-ray powder diffraction, and electron powder diffraction. It is found that the Ni(3)Si-type nanoparticles have a core-shell structure. The core maintains the size, the shape, and the crystal structure of the precipitates that existed in the bulk alloys, while the shell is an amorphous phase, containing only Si and O (SiO(x)). The shell forms around the precipitates during the extraction process. After annealing the nanoparticles in nitrogen at 700 °C, the tridymite phase recrystallizes within the shell, which remains partially amorphous. In contrast, on annealing in air at 1000 °C, no changes in the composition or the structure of the nanoparticles occur. It is suggested that the shell forms after dealloying of the matrix phase, where Si atoms, the main constituents of the shell, migrate to the surface of the precipitates.

Si cycling in a forest biogeosystem – the importance of transient state biogenic Si pools

Directory of Open Access Journals (Sweden)

M. Sommer

2013-07-01

Full Text Available The relevance of biological Si cycling for dissolved silica (DSi export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi might contribute > 50% to DSi (Gerard et al., 2008. However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%. Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007–04/2011, we quantified (i internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr by BIOME-BGC (version ZALF, (ii related Si budgets, and (iii Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae. We quantified an average Si plant uptake of 35 kg Si ha−1 yr−1 – most of which is recycled to the soil by litterfall – and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha−1. The comparatively high DSi concentrations (6 mg L−1 and DSi exports (12 kg Si ha−1 yr−1 could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

Selective optical switching of interface-coupled relaxation dynamics in carbon nanotube-Si heterojunctions

KAUST Repository

Ponzoni, Stefano

2014-10-16

By properly tuning the photon energy of a femtosecond laser pump, we disentangle, in carbon nanotube-Si (CNT/Si) heterojunctions, the fast relaxation dynamics occurring in CNT from the slow repopulation dynamics due to hole charge transfer at the junction. In this way we are able to track the transfer of the photogenerated holes from the Si depletion layer to the CNT layer, under the action of the built-in heterojunction potential. This also clarifies that CNT play an active role in the junction and do not act only as channels for charge collection and transport.

Selective optical switching of interface-coupled relaxation dynamics in carbon nanotube-Si heterojunctions

KAUST Repository

Ponzoni, Stefano; Galimberti, Gianluca; Sangaletti, L.; Castrucci, Paola; Del Gobbo, Silvano; Morbidoni, Maurizio; Scarselli, Manuela A.; Pagliara, Stefania

2014-01-01

By properly tuning the photon energy of a femtosecond laser pump, we disentangle, in carbon nanotube-Si (CNT/Si) heterojunctions, the fast relaxation dynamics occurring in CNT from the slow repopulation dynamics due to hole charge transfer at the junction. In this way we are able to track the transfer of the photogenerated holes from the Si depletion layer to the CNT layer, under the action of the built-in heterojunction potential. This also clarifies that CNT play an active role in the junction and do not act only as channels for charge collection and transport.

The Construction of the Malaysian Educators Selection Inventory (MEdSI: A Large Scale Assessment Initiative

Directory of Open Access Journals (Sweden)

Joharry Othman

2008-06-01

Full Text Available The crucial role that teachers and schools play in the development of a nation’s human resource is undeniable. In Malaysia, teaching has always been perceived as a financially secure and relatively easy job by many, resulting in mass application for entry into teacher education programmes. Many of those who aspire and opto to go into the teaching profession however do so regardless of their personal interests, potential, and values. Pursuing a program that does not fit a person’s personality and interest – despite initially having good academic credentials and excellent co-curricular involvement in school – may result in unsatisfactory academic performance, frustration, change of program and even withdrawal at college level. Hence, in the quest for selecting suitable teacher trainee candidates, a psychometrically sound instrument known as the Malaysian Educators Selection Inventory (MEdSI was developed as a screening measure to filter the large number of teacher hopefuls. This paper specifically describes the theoretical basis and the constructs of the instrument developed.

Process-oriented microstructure evolution of V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}; Prozessabhaengige Mikrostrukturausbildung von V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}-Werkstoffen

Energy Technology Data Exchange (ETDEWEB)

Krueger, Manja; Koeppe-Grabow, Birte [Magdeburg Univ. (Germany)

2017-05-15

Vanadium silicide alloys are potentially interesting high temperature materials, since they combine high mechanical strength at temperatures of up to 1 000 C with a low density. In this study, the microstructures of innovative V-Si-B high temperature materials are examined using different analytical methods. The selected V-9Si-13B model alloy was manufactured using a powder metallurgical process route as well as an ingot metallurgical process. The alloys show a vanadium solid solution phase as well as the high-strength silicide phases V{sub 3}Si and V{sub 5}SiB{sub 2}. Especially for the powder metallurgically fabricated alloy, showing finely dispersed phases, the quantification of microstructural constituents is difficult. The phases, however, can be separated from one another via computer tomography.

Experimental investigation on densification behavior and surface roughness of AlSi10Mg powders produced by selective laser melting

Science.gov (United States)

Wang, Lin-zhi; Wang, Sen; Wu, Jiao-jiao

2017-11-01

Effects of laser energy density (LED) on densities and surface roughness of AlSi10Mg samples processed by selective laser melting were studied. The densification behaviors of the SLM manufactured AlSi10Mg samples at different LEDs were characterized by a solid densitometer, an industrial X-ray and CT detection system. A field emission scanning electron microscope, an automatic optical measuring system, and a surface profiler were used for measurements of surface roughness. The results show that relatively high density can be obtained with the point distance of 80-105 μm and the exposure time of 140-160 μs. The LED has an important influence on the surface morphology of the forming part, too high LED may lead to balling effect, while too low LED tends to produce defects, such as porosity and microcrack, and then affect surface roughness and porosities of the parts finally.

Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

DEFF Research Database (Denmark)

Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

1986-01-01

X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

SiRNAs conjugated with aromatic compounds induce RISC-mediated antisense strand selection and strong gene-silencing activity

Energy Technology Data Exchange (ETDEWEB)

Kubo, Takanori, E-mail: kubo-t@yasuda-u.ac.jp [Faculty of Pharmacy, Yasuda Women' s University, 6-13-1 Yasuhigashi, Asaminami-ku, Hiroshima 731-0153 (Japan); Yanagihara, Kazuyoshi [Faculty of Pharmacy, Yasuda Women' s University, 6-13-1 Yasuhigashi, Asaminami-ku, Hiroshima 731-0153 (Japan); Division of Genetics, National Cancer Center Research Institute, 5-1-1 Tsukiji, Chuo-ku, Tokyo 104-0045 (Japan); Takei, Yoshifumi [Department of Biochemistry, Nagoya University Graduate School of Medicine, 65 Tsurumi-cho, Showa-ku, Nagoya 466-8550 (Japan); Mihara, Keichiro [Department of Hematology and Oncology, Research Institute for Radiation Biology and Medicine, Hiroshima University, 1-2-3 Kasumi, Minami-ku, Hiroshima 734-8553 (Japan); Sato, Yuichiro; Seyama, Toshio [Faculty of Pharmacy, Yasuda Women' s University, 6-13-1 Yasuhigashi, Asaminami-ku, Hiroshima 731-0153 (Japan)

2012-10-05

Highlights: Black-Right-Pointing-Pointer SiRNAs conjugated with aromatic compounds (Ar-siRNAs) at 5 Prime -sense strand were synthesized. Black-Right-Pointing-Pointer Ar-siRNAs increased resistance against nuclease degradation. Black-Right-Pointing-Pointer Ar-siRNAs were thermodynamically stable compared with the unmodified siRNA. Black-Right-Pointing-Pointer High levels of cellular uptake and cytoplasmic localization were found. Black-Right-Pointing-Pointer Strong gene-silencing efficacy was exhibited in the Ar-siRNAs. -- Abstract: Short interference RNA (siRNA) is a powerful tool for suppressing gene expression in mammalian cells. In this study, we focused on the development of siRNAs conjugated with aromatic compounds in order to improve the potency of RNAi and thus to overcome several problems with siRNAs, such as cellular delivery and nuclease stability. The siRNAs conjugated with phenyl, hydroxyphenyl, naphthyl, and pyrenyl derivatives showed strong resistance to nuclease degradation, and were thermodynamically stable compared with unmodified siRNA. A high level of membrane permeability in HeLa cells was also observed. Moreover, these siRNAs exhibited enhanced RNAi efficacy, which exceeded that of locked nucleic acid (LNA)-modified siRNAs, against exogenous Renilla luciferase in HeLa cells. In particular, abundant cytoplasmic localization and strong gene-silencing efficacy were found in the siRNAs conjugated with phenyl and hydroxyphenyl derivatives. The novel siRNAs conjugated with aromatic compounds are promising candidates for a new generation of modified siRNAs that can solve many of the problems associated with RNAi technology.

Si96: A New Silicon Allotrope with Interesting Physical Properties

Directory of Open Access Journals (Sweden)

Qingyang Fan

2016-04-01

Full Text Available The structural mechanical properties and electronic properties of a new silicon allotrope Si96 are investigated at ambient pressure by using a first-principles calculation method with the ultrasoft pseudopotential scheme in the framework of generalized gradient approximation. The elastic constants and phonon calculations reveal that Si96 is mechanically and dynamically stable at ambient pressure. The conduction band minimum and valence band maximum of Si96 are at the R and G point, which indicates that Si96 is an indirect band gap semiconductor. The anisotropic calculations show that Si96 exhibits a smaller anisotropy than diamond Si in terms of Young’s modulus, the percentage of elastic anisotropy for bulk modulus and shear modulus, and the universal anisotropic index AU. Interestingly, most silicon allotropes exhibit brittle behavior, in contrast to the previously proposed ductile behavior. The void framework, low density, and nanotube structure make Si96 quite attractive for applications such as hydrogen storage and electronic devices that work at extreme conditions, and there are potential applications in Li-battery anode materials.

Economic values and expected effect of selection index for pathogen-specific mastitis under Danish conditions

DEFF Research Database (Denmark)

Sørensen, Lars Peter; Mark, Thomas; Sørensen, M.K.

2010-01-01

The objectives of this study were 1) to estimate costs related to 5 different pathogen-specific mastitis traits (susceptibility to different pathogens causing mastitis in dairy cattle) and unspecific mastitis, and 2) to compare selection differentials for an udder health index consisting of 5...... different pathogen-specific mastitis traits and lactation average somatic cell count from 5 to 170 d after first calving (LASCC170) with another index consisting of 1 unspecific mastitis trait and LASCC170. Economic values were estimated for mastitis caused by Staphylococcus aureus, Streptococcus...... dysgalactiae, Escherichia coli, coagulase-negative staphylococci, and Streptococcus uberis using a stochastic simulation model (SimHerd IV). Mastitis incidences for SimHerd IV were from incidences of mastitis treatments in primiparous Danish Holstein cows calving in 2007. Estimated costs ranged from 149 euro...

Filter indexing for spectrophotometer system

International Nuclear Information System (INIS)

Chamran, M.M.; Scott, L.B.; Williams, P.B.

1982-01-01

A spectrophotometer system has an optical system for transmitting a beam from a source at select wavelengths onto a detector. A plurality of filters are positioned in a tray. A stepper mechanism indexes the tray along a path. A microcomputer controls the stepper mechanism and the optical system. The wavelength is successively changed over a range, the tray is indexed to move a select filter into the beam at a predetermined wavelength and the changing is discontinued during indexing

Femtosecond index change mechanisms and morphology of SiC crystalline materials

International Nuclear Information System (INIS)

DesAutels, Logan; Brewer, Christopher; Powers, Peter; Walker, Mark; Tomlin, David; Fratini, Albert; Juhl, Shane; Chen Weibin

2009-01-01

Femtosecond lasers have a unique ability of processing bulk transparent materials for various applications such as micromachining, waveguide manufacturing, and photonic bandgap structures just to name a few. These applications depend on the formation of micron or submicron size features that are known to be index modifications to the bulk substrate [H. Guo, H. Jiang, Y. Fang, C. Peng, H. Yang, Y. Li, Q. Gong, J. Opt. A: Pure Appl. Opt. 6 (2004) 787]. To the best of our knowledge the physical understanding of how these index-modified features are formed is still unknown, but many good theories exist such as Petite et al. [G. Petite, P. Daguzan, S. Guizard, P. Martin, in: IEEE Annual Report Conference on Electrical Insulation and Dielectric Phenomena, vol. 15, IEEE, 1995, pp. 40-44] or Tien et al. [A. Tien, S. Backus, H. Kapteyn, M. Murnane, G. Mourou, Phys. Rev. Lett. 82 (1999) 3883]. In this Letter the question on the physical cause for index changes is investigated by the combined efforts between Wright-Patterson AFB (WPAFB) and the University of Dayton (UD) using numerous imaging equipment such as TEM, AFM, NSOM, Nomarski microscopy, X-ray crystallography, Raman spectroscopy, and even diffraction efficiency experiments. With all the combined imaging equipment this research is able to present valuable data and deduce plausible theories of the physics of the index modification mechanism

Behind the Nature of Titanium Oxide Excellent Surface Passivation and Carrier Selectivity of c-Si

DEFF Research Database (Denmark)

Plakhotnyuk, Maksym; Crovetto, Andrea; Hansen, Ole

We present an expanded study of the passivation properties of titanium dioxide (TiO2) on p-type crystalline silicon (c-Si). We report a low surface recombination velocity (16 cm/s) for TiO2 passivation layers with a thin tunnelling oxide interlayer (SiO2 or Al2O3) on p-type crystalline silicon (c-Si......), and post-deposition annealing temperature were investigated. We have observed that that SiO2 and Al2O3 interlayers enhance the TiO2 passivation of c-Si. TiO2 thin film passivation layers alone result in lower effective carrier lifetime. Further annealing at 200  ̊C in N2 gas enhances the surface...

Shock Index Correlates with Extravasation on Angiographs of Gastrointestinal Hemorrhage: A Logistics Regression Analysis

International Nuclear Information System (INIS)

Nakasone, Yutaka; Ikeda, Osamu; Yamashita, Yasuyuki; Kudoh, Kouichi; Shigematsu, Yoshinori; Harada, Kazunori

2007-01-01

We applied multivariate analysis to the clinical findings in patients with acute gastrointestinal (GI) hemorrhage and compared the relationship between these findings and angiographic evidence of extravasation. Our study population consisted of 46 patients with acute GI bleeding. They were divided into two groups. In group 1 we retrospectively analyzed 41 angiograms obtained in 29 patients (age range, 25-91 years; average, 71 years). Their clinical findings including the shock index (SI), diastolic blood pressure, hemoglobin, platelet counts, and age, which were quantitatively analyzed. In group 2, consisting of 17 patients (age range, 21-78 years; average, 60 years), we prospectively applied statistical analysis by a logistics regression model to their clinical findings and then assessed 21 angiograms obtained in these patients to determine whether our model was useful for predicting the presence of angiographic evidence of extravasation. On 18 of 41 (43.9%) angiograms in group 1 there was evidence of extravasation; in 3 patients it was demonstrated only by selective angiography. Factors significantly associated with angiographic visualization of extravasation were the SI and patient age. For differentiation between cases with and cases without angiographic evidence of extravasation, the maximum cutoff point was between 0.51 and 0.0.53. Of the 21 angiograms obtained in group 2, 13 (61.9%) showed evidence of extravasation; in 1 patient it was demonstrated only on selective angiograms. We found that in 90% of the cases, the prospective application of our model correctly predicted the angiographically confirmed presence or absence of extravasation. We conclude that in patients with GI hemorrhage, angiographic visualization of extravasation is associated with the pre-embolization SI. Patients with a high SI value should undergo study to facilitate optimal treatment planning

Free androgen index as a determinant of arterial stiffness in menopause: a mediation analysis.

Science.gov (United States)

Lambrinoudaki, Irene; Georgiopoulos, Georgios A; Athanasouli, Fani; Armeni, Elena; Rizos, Demetrios; Augoulea, Areti; Chatzidou, Sofia; Koutli, Evangelia; Makris, Nikolaos; Kanakakis, Ioannis; Stamatelopoulos, Kimon

2017-06-01

Associations of endogenous androgens in menopause with blood pressure (BP) and indices of arterial stiffness are reported, but directional relationships are not clear. Structural equation modeling is a contemporary statistical method, which allows assessment of such relationships and improves pathway understanding. We recruited 411 consecutive apparently healthy postmenopausal women who underwent noninvasive vascular evaluation. This included pulse wave analysis (aortic pressures and arterial wave reflections [augmentation index]), measurement of aortic stiffness by pulse wave velocity (PWV), stiffness index (SI), and flow-mediated dilatation. A cumulative marker combining PWV and SI (combined local and aortic arterial stiffness [CAS]) was also assessed. Free androgen index (FAI) was calculated from circulating total testosterone and sex hormone-binding globulin. FAI was an independent determinant of systolic BP (SBP) (P = 0.032), SI (P = 0.042), and PWV (P = 0.027). Under structural equation modeling analysis, FAI was a direct predictor for PWV (beta = 0.149, P = 0.014), SI (beta = 0.154, P = 0.022), and CAS (beta = 0.193, P = 0.02), whereas SBP was a parallel mediator of androgen's vascular effects on PWV (beta = 0.280, P stiffness via flow-mediated dilatation was not established. FAI was not a determinant of augmentation index. In healthy postmenopausal women, FAI was directly associated with PWV, SI, and CAS. FAI also directly correlated with SBP, which in turn concurrently increased PWV and CAS. The directional correlations found herein, imply that endogenous androgens may be causally associated with indices of arterial stiffness both directly and indirectly. This hypothesis should be confirmed in further studies with causal design.

Synthesis, Characterization, and Mechanism of Formation of Janus-Like Nanoparticles of Tantalum Silicide-Silicon (TaSi2/Si

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Andrey V. Nomoev

2014-12-01

Full Text Available Metal-semiconductor Janus-like nanoparticles with the composition tantalum silicide-silicon (TaSi2/Si were synthesized for the first time by means of an evaporation method utilizing a high-power electron beam. The composition of the synthesized particles were characterized using high-resolution transmission electron microscopy (HRTEM, X-ray diffraction (XRD, selective area electron diffraction (SAED, and energy dispersive X-ray fluorescence (EDX analysis. The system is compared to previously synthesized core-shell type particles in order to show possible differences responsible for the Janus-like structure forming instead of a core-shell architecture. It is proposed that the production of Janus-like as opposed to core-shell or monophase particles occurs due to the ability of Ta and Si to form compounds and the relative content of Ta and Si atoms in the produced vapour. Based on the results, a potential mechanism of formation for the TaSi2/Si nanoparticles is discussed.

Microstructural optimization of high temperature SiC/SiC composites by nite process

International Nuclear Information System (INIS)

Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

2007-01-01

Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

Microstructural optimization of high temperature SiC/SiC composites by nite process

Energy Technology Data Exchange (ETDEWEB)

Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

2007-07-01

Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

Flash Flood Hazard Susceptibility Mapping Using Frequency Ratio and Statistical Index Methods in Coalmine Subsidence Areas

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Chen Cao

2016-09-01

Full Text Available This study focused on producing flash flood hazard susceptibility maps (FFHSM using frequency ratio (FR and statistical index (SI models in the Xiqu Gully (XQG of Beijing, China. First, a total of 85 flash flood hazard locations (n = 85 were surveyed in the field and plotted using geographic information system (GIS software. Based on the flash flood hazard locations, a flood hazard inventory map was built. Seventy percent (n = 60 of the flooding hazard locations were randomly selected for building the models. The remaining 30% (n = 25 of the flooded hazard locations were used for validation. Considering that the XQG used to be a coal mining area, coalmine caves and subsidence caused by coal mining exist in this catchment, as well as many ground fissures. Thus, this study took the subsidence risk level into consideration for FFHSM. The ten conditioning parameters were elevation, slope, curvature, land use, geology, soil texture, subsidence risk area, stream power index (SPI, topographic wetness index (TWI, and short-term heavy rain. This study also tested different classification schemes for the values for each conditional parameter and checked their impacts on the results. The accuracy of the FFHSM was validated using area under the curve (AUC analysis. Classification accuracies were 86.61%, 83.35%, and 78.52% using frequency ratio (FR-natural breaks, statistical index (SI-natural breaks and FR-manual classification schemes, respectively. Associated prediction accuracies were 83.69%, 81.22%, and 74.23%, respectively. It was found that FR modeling using a natural breaks classification method was more appropriate for generating FFHSM for the Xiqu Gully.

On the annealing-induced enhancement of the interface properties of NiO:Cu/wet-SiOx/n-Si tunnelling junction solar cells

Science.gov (United States)

Yang, Xueliang; Liu, Wei; Chen, Jingwei; Sun, Yun

2018-04-01

Using metal oxides to form a carrier-selective interface on crystalline silicon (c-Si) has recently generated considerable interest for use with c-Si photovoltaics because of the potential to reduce cost. n-type oxides, such as MoO3, V2O5, and WO3, have been widely studied. In this work, a p-type oxide, Cu-doped NiO (NiO:Cu), is explored as a transparent hole-selective contact to n-Si. An ultrathin SiOx layer, fabricated by a wet-chemical method (wet-SiOx), is introduced at the NiO:Cu/n-Si interface to achieve a tunnelling junction solar cell. Interestingly, it was observed that the interface quality of the NiO:Cu/wet-SiOx/n-Si heterojunction was dramatically enhanced by post-deposition annealing (PDA) at a temperature of 200 °C. Our device exhibits an improved power conversion efficiency of 10.8%, which is the highest efficiency among NiO/Si heterojunction photo-electric devices to date. It is demonstrated that the 200 °C PDA treatment enhances the built-in field by a reduction in the interface density of states (Dit) but does not influence the work function of the NiO:Cu thin layer. This stable work function after the PDA treatment is in conflict with the changed built-in field according to the Schottky model. Thus, the Bardeen model is introduced for this physical insight: the enhancement of the built-in field originates from the unpinning of the Fermi levels of NiO:Cu and n-Si by the interface state reduction.

Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

International Nuclear Information System (INIS)

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

2009-01-01

Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

Extremes of shock index predicts death in trauma patients

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Stephen R Odom

2016-01-01

Full Text Available Context: We noted a bimodal relationship between mortality and shock index (SI, the ratio of heart rate to systolic blood pressure. Aims: To determine if extremes of SI can predict mortality in trauma patients. Settings and Designs: Retrospective evaluation of adult trauma patients at a tertiary care center from 2000 to 2012 in the United States. Materials and Methods: We examined the SI in trauma patients and determined the adjusted mortality for patients with and without head injuries. Statistical Analysis Used: Descriptive statistics and multivariable logistic regression. Results: SI values demonstrated a U-shaped relationship with mortality. Compared with patients with a SI between 0.5 and 0.7, patients with a SI of 1.3 had an odds ratio of death of 3.1. (95% CI 1.6–5.9. Elevated SI is associated with increased mortality in patients with isolated torso injuries, and is associated with death at both low and high values in patients with head injury. Conclusion: Our data indicate a bimodal relationship between SI and mortality in head injured patients that persists after correction for various co-factors. The distribution of mortality is different between head injured patients and patients without head injuries. Elevated SI predicts death in all trauma patients, but low SI values only predict death in head injured patients.

Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

International Nuclear Information System (INIS)

Leung, To Chi.

1991-01-01

A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

Femtosecond laser damage threshold and nonlinear characterization in bulk transparent SiC materials

International Nuclear Information System (INIS)

DesAutels, G. Logan; Finet, Marc; Ristich, Scott; Whitaker, Matt; Brewer, Chris; Juhl, Shane; Walker, Mark; Powers, Peter

2008-01-01

Semi-insulating and conducting SiC crystalline transparent substrates were studied after being processed by femtosecond (fs) laser radiation (780 nm at 160 fs). Z-scan and damage threshold experiments were performed on both SiC bulk materials to determine each sample's nonlinear and threshold parameters. 'Damage' in this text refers to an index of refraction modification as observed visually under an optical microscope. In addition, a study was performed to understand the damage threshold as a function of numerical aperture. Presented here for the first time, to the best of our knowledge, are the damage threshold, nonlinear index of refraction, and nonlinear absorption measured values

Model-independent determination of the strain distribution for a SiGe/Si superlattice using X-ray diffractometry data

International Nuclear Information System (INIS)

Nikulin, A.Y.; Stevenson, A.W.; Hashizume, H.

1996-01-01

The strain distribution in a Si 0.9 Ge 0.l/Si superlattice is determined from x-ray diffractometry data with a 25 Angstroms depth resolution. A logarithmic dispersion relation is used to determine the phase of the structure factor with information available a priori on the sample structure. Phase information is obtained from the observed reflection intensity via a logarithmic Hilbert transform and the a priori information is used to select the zeros to be included in the solution. The reconstructed lattice strain profile clearly resolves SiGe and Si layers of 90 - 160 Angstroms thickness alternately stacked on a silicon substrate. The SiGe layer is found to have a lattice spacing in the surface-normal direction significantly smaller than predicted by Vegard's law. The result is supported by very good agreement of the simulated rocking curve profile with the observation. 18 refs., 1 tab., 5 figs

SiRNA Crosslinked Nanoparticles for the Treatment of Inflammation-induced Liver Injury.

Science.gov (United States)

Tang, Yaqin; Zeng, Ziying; He, Xiao; Wang, Tingting; Ning, Xinghai; Feng, Xuli

2017-02-01

RNA interference mediated by small interfering RNA (siRNA) provides a powerful tool for gene regulation, and has a broad potential as a promising therapeutic strategy. However, therapeutics based on siRNA have had limited clinical success due to their undesirable pharmacokinetic properties. This study presents pH-sensitive nanoparticles-based siRNA delivery systems (PNSDS), which are positive-charge-free nanocarriers, composed of siRNA chemically crosslinked with multi-armed poly(ethylene glycol) carriers via acid-labile acetal linkers. The unique siRNA crosslinked structure of PNSDS allows it to have minimal cytotoxicity, high siRNA loading efficiency, and a stimulus-responsive property that enables the selective intracellular release of siRNA in response to pH conditions. This study demonstrates that PNSDS can deliver tumor necrosis factor alpha (TNF-α) siRNA into macrophages and induce the efficient down regulation of the targeted gene in complete cell culture media. Moreover, PNSDS with mannose targeting moieties can selectively accumulate in mice liver, induce specific inhibition of macrophage TNF-α expression in vivo, and consequently protect mice from inflammation-induced liver damages. Therefore, this novel siRNA delivering platform would greatly improve the therapeutic potential of RNAi based therapies.

Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

International Nuclear Information System (INIS)

Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

2008-01-01

Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

First-principles study of point-defect production in Si and SiC

International Nuclear Information System (INIS)

Windl, W.; Lenosky, T.J.; Kress, J.D.; Voter, A.F.

1998-03-01

The authors have calculated the displacement-threshold energy E(d) for point-defect production in Si and SiC using empirical potentials, tight-binding, and first-principles methods. They show that -- depending on the knock-on direction -- 64-atom simulation cells can be sufficient to allow a nearly finite-size-effect-free calculation, thus making the use of first-principles methods possible. They use molecular dynamics (MD) techniques and propose the use of a sudden approximation which agrees reasonably well with the MD results for selected directions and which allows estimates of Ed without employing an MD simulation and the use of computationally demanding first-principles methods. Comparing the results with experiment, the authors find the full self-consistent first-principles method in conjunction with the sudden approximation to be a reliable and easy method to predict E d . Furthermore, they have examined the temperature dependence of E d for C in SiC and found it to be negligible

Materials and devices for quantum information processing in Si/SiGe

Energy Technology Data Exchange (ETDEWEB)

Sailer, Juergen

2010-12-15

, starting from Si/SiGe 2DES, further reduce the degree of freedom of the motion of the electrons. This is accomplished by nano-structured Palladium (Pd) Schottky top-gates on the sample surface with which it is possible to selectively and precisely adjust the 2D sheet carrier density in a leakage and hysteresis free manner. Using this technique, it was possible to realize an electrostatically defined double quantum dot (DQD) in Si/SiGe. By adjusting the gate bias, the DQD could be tuned from the many electron regime, in which directly measurable current transport was still possible, all the way down to the few electron regime. In this few electron regime, current flow became unmeasurable small, which made the application of a charge sensing technique necessary. As a highly sensitive charge-sensor, another quantum dot nearby was used. Changes in the charge occupancy of the DQD smaller than one tenth of an elementary charge could be resolved. Suitability of the device for more sophisticated future experiments in QIP could be shown by measuring charge-stability-diagrams free of any unwanted charge reconfiguration events. (orig.)

Sum Frequency Generation Vibrational Spectroscopy of 1,3-Butadiene Hydrogenation on 4 nm Pt@SiO 2 , Pd@SiO 2 , and Rh@SiO 2 Core–Shell Catalysts

KAUST Repository

Krier, James M.

2015-01-14

© 2014 American Chemical Society. 1,3-Butadiene (1,3-BD) hydrogenation was performed on 4 nm Pt, Pd, and Rh nanoparticles (NPs) encapsulated in SiO2 shells at 20, 60, and 100 °C. The core-shells were grown around polyvinylpyrrolidone (PVP) coated NPs (Stöber encapsulation) prepared by colloidal synthesis. Sum frequency generation (SFG) vibrational spectroscopy was performed to correlate surface intermediates observed in situ with reaction selectivity. It is shown that calcination is effective in removing PVP, and the SFG signal can be generated from the metal surface. Using SFG, it is possible to compare the surface vibrational spectrum of Pt@SiO2 (1,3-BD is hydrogenated through multiple paths and produces butane, 1-butene, and cis/trans-2-butene) to Pd@SiO2 (1,3-BD favors one path and produces 1-butene and cis/trans-2-butene). In contrast to Pt@SiO2 and Pd@SiO2, SFG and kinetic experiments of Rh@SiO2 show a permanent accumulation of organic material.

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Science.gov (United States)

Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

2012-09-07

We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

International Nuclear Information System (INIS)

Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

2006-01-01

Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

Synthesis of surface molecular imprinting polymer on SiO{sub 2}-coated CdTe quantum dots as sensor for selective detection of sulfadimidine

Energy Technology Data Exchange (ETDEWEB)

Zhou, Zhiping; Ying, Haiqin; Liu, Yanyan [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Xu, Wanzhen, E-mail: xwz09@ujs.edu.cn [School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Yanfei; Luan, Yu [Zhenjiang Institute for Drug Control of Jiangsu Province, Zhenjiang 212003 (China); Lu, Yi; Liu, Tianshu [Zhenjiang Entry-Exit Inspection Quarantine Bureau, Zhenjiang 212008 (China); Yu, Shui [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Wenming, E-mail: ywm@ujs.edu.cn [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)

2017-05-15

Highlights: • Surface molecular imprinting technology and SiO{sub 2}-coated CdTe QDs were combined to prepare a novel fluorescent sensor for selective detection of sulfadimidine. • The relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. • The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation ranged from 1.9 to 3.1%. - Abstract: This paper demonstrates a facile method to synthesize surface molecular imprinting polymer (MIP) on SiO{sub 2}-coated CdTe QDs for selective detection of sulfadimidine (SM{sub 2}). The fluorescent MIP sensor was prepared using cadmium telluride quantum dots (CdTe QDs) as the material of fluorescent signal readout, sulfadimidine as template molecule, 3-aminopropyltriethoxysilane (APTES) as functional monomer and tetraethyloxysilane (TEOS) as cross-linking agent. The CdTe cores were embed in the silicon shells by a sol-gel reaction and then the molecular imprinting layers were immobilized on the surface of the SiO{sub 2}-coated CdTe QDs. Under the optimized conditions, the relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation (RSD) ranged from 1.9 to 3.1%, which indicates the successful synthesis of the fluorescent MIP sensor. This sensor provides an alternative solution for selective determination of sulfadimidine from real milk samples.

APPLICATION OF THE PERFORMANCE SELECTION INDEX METHOD FOR SOLVING MACHINING MCDM PROBLEMS

Directory of Open Access Journals (Sweden)

Dušan Petković

2017-04-01

Full Text Available Complex nature of machining processes requires the use of different methods and techniques for process optimization. Over the past few years a number of different optimization methods have been proposed for solving continuous machining optimization problems. In manufacturing environment, engineers are also facing a number of discrete machining optimization problems. In order to help decision makers in solving this type of optimization problems a number of multi criteria decision making (MCDM methods have been proposed. This paper introduces the use of an almost unexplored MCDM method, i.e. performance selection index (PSI method for solving machining MCDM problems. The main motivation for using the PSI method is that it is not necessary to determine criteria weights as in other MCDM methods. Applicability and effectiveness of the PSI method have been demonstrated while solving two case studies dealing with machinability of materials and selection of the most suitable cutting fluid for the given machining application. The obtained rankings have good correlation with those derived by the past researchers using other MCDM methods which validate the usefulness of this method for solving machining MCDM problems.

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

Science.gov (United States)

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

2017-10-01

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Saussurea involucrata SiDhn2 gene confers tolerance to drought stress in upland cotton

International Nuclear Information System (INIS)

Liu, B.; Zhu, J.; Mu, J.; Zhu, J.; Liang, Z.; Zhang, L.

2017-01-01

Severe water shortage has long been acknowledged as one major limiting factor for global cotton production, and cultivation of cotton varieties with strong drought resistance is of important economic and social significances. In this study, the Xinjiang upland cotton variety Xinluzao 42 was transformed with the SiDhn2 gene by optimized agrobacterium transformation system. The integration of SiDhn2 gene into cotton genome was confirmed by PCR and Southern blot hybridization, and the drought resistance of transgenic and corresponding receptor cotton plants and their physiological indexes under drought stress were detailedly analyzed. Multiple physiological and biochemical indexes including soluble sugar content, free proline content, chlorophyll content, relative water content, net photosynthetic rate, transpiration rate, intercellular CO/sub 2/ concentration in transgenic cotton expressing SiDhn2 gene under drought stress were significantly higher than those of receptor cotton. More importantly, the transgenic cotton plants exhibited remarkably decreased boll abscission rate and highly increased seed yield, indicating the significant role of SiDhn2 gene in cotton drought resistance and its great application potential in agricultural production. (author)

Advanced Environmental Barrier Coating Development for SiC-SiC Ceramic Matrix Composite Components

Science.gov (United States)

Zhu, Dongming; Harder, Bryan; Hurst, Janet B.; Halbig, Michael Charles; Puleo, Bernadette J.; Costa, Gustavo; Mccue, Terry R.

2017-01-01

This presentation reviews the NASA advanced environmental barrier coating (EBC) system development for SiC-SiC Ceramic Matrix Composite (CMC) combustors particularly under the NASA Environmentally Responsible Aviation, Fundamental Aeronautics and Transformative Aeronautics Concepts Programs. The emphases have been placed on the current design challenges of the 2700-3000F capable environmental barrier coatings for low NOX emission combustors for next generation turbine engines by using advanced plasma spray based processes, and the coating processing and integration with SiC-SiC CMCs and component systems. The developments also have included candidate coating composition system designs, degradation mechanisms, performance evaluation and down-selects; the processing optimizations using TriplexPro Air Plasma Spray Low Pressure Plasma Spray (LPPS), Plasma Spray Physical Vapor Deposition and demonstration of EBC-CMC systems. This presentation also highlights the EBC-CMC system temperature capability and durability improvements under the NASA development programs, as demonstrated in the simulated engine high heat flux, combustion environments, in conjunction with high heat flux, mechanical creep and fatigue loading testing conditions.

Progress in the development of a SiCf/SiC creep test

International Nuclear Information System (INIS)

Hamilton, M.L.; Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Garner, F.A.; Hecht, S.L.

1996-01-01

An effort is now underway to design an experiment that will allow the irradiation creep behavior of SiC f /SiC composites to be quantified. Numerous difficulties must be overcome to achieve this goal, including determining an appropriate specimen geometry that will fit their radiation volumes available and developing a fabrication procedure for such a specimen. A specimen design has been selected, and development of fabrication methods is proceeding. Thermal and stress analyses are being performed to evaluate the viability of the specimen and to assist with determining the design parameters. A possible alternate type of creep test is also being considered. Progress in each of these areas is described in this report

Nano-structural properties of ZnO films for Si based heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Breivik, T.H. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)], E-mail: t.h.breivik@fys.uio.no; Diplas, S. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway); Ulyashin, A.G. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Gunnaes, A.E. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); Olaisen, B.R.; Wright, D.N.; Holt, A. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Olsen, A. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)

2007-10-15

Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.

Nano-structural properties of ZnO films for Si based heterojunction solar cells

International Nuclear Information System (INIS)

Breivik, T.H.; Diplas, S.; Ulyashin, A.G.; Gunnaes, A.E.; Olaisen, B.R.; Wright, D.N.; Holt, A.; Olsen, A.

2007-01-01

Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping

Passive harmonic mode locking by mode selection in Fabry-Perot diode lasers with patterned effective index.

Science.gov (United States)

Bitauld, David; Osborne, Simon; O'Brien, Stephen

2010-07-01

We demonstrate passive harmonic mode locking of a quantum-well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a nonperiodic patterning of the cavity effective index. By selecting six modes spaced at twice the fundamental mode spacing, near-transform-limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.

Studies of valence of selected rare earth silicides determined using Si K and Pd/Rh L{sub 2,3} XANES and LAPW numerical studies

Energy Technology Data Exchange (ETDEWEB)

Zajdel, P., E-mail: pawel.zajdel@us.edu.pl [Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland); Kisiel, A., E-mail: andrzej.kisiel@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Szytuła, A., E-mail: andrzej.szytula@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Goraus, J., E-mail: jerzy.goraus@us.edu.pl [Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland); Balerna, A., E-mail: antonella.balerna@lnf.infn.it [Laboratori Nazionali di Frascati, INFN, Lab DAPHINE-Light, Via E. Fermi 40, I-00044 Frascati (Italy); Banaś, A., E-mail: slsba@nus.edu.sg [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Starowicz, P., E-mail: pawel.starowicz@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Konior, J., E-mail: jerzy.konior@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Cinque, G., E-mail: gianfelice.cinque@diamond.ac.uk [Diamond Light Source, Harwell Campus, OX11 0DE Chilton-Didcot (United Kingdom); Grilli, A., E-mail: antonio.grilli@lnf.infn.it [Laboratori Nazionali di Frascati, INFN, Lab DAPHINE-Light, Via E. Fermi 40, I-00044 Frascati (Italy)

2015-12-01

Highlights: • The Si K and Pd L{sub 3} edges of R{sub 2}PdSi{sub 3} (R = Ce, Nd, Tb, Dy, Ho, Er) and HoRh{sub 2−x}Pd{sub x}Si{sub 2} are reported. • The R–Si bonds possess polar and 4d5s bands of Pd and Rh metallic characters. • There is no indication of Ce having a different valence than the other rare earths. • The positions and features of the calculated edges exhibit a fair agreement up to ≈10 eV. • The supercell used for Ho{sub 2}PdSi{sub 3} is good enough to reproduce the Si K edge. - Abstract: We report on the investigation of Si and Pd/Rh chemical environments using X-ray Absorption Near Edge Spectroscopy in two different families of rare earth silicides R{sub 2}PdSi{sub 3} (R = Ce, Nd, Tb, Dy, Ho, Er) and HoRh{sub 2−x}Pd{sub x}Si{sub 2} (x = 0, 0.5, 0.75, 1.0, 1.5, 1.8, 2.0). The Si K, Pd L{sub 3} and Rh L{sub 3} absorption edges were recorded in order to follow their changes upon the variation of 4f and 4d5s electron numbers. In both cases it was found that the Si K edge was shifted ≈0.5 eV toward lower energies, relative to pure silicon. In the first family, the shift decreases with increasing number of f-electrons, while the Si K edge remains constant upon rhodium–palladium substitution. In all cases the Pd L{sub 3} edge was shifted to higher energies relative to metallic Pd. No visible change in the Pd L{sub 3} position was observed either with a varying 4f electron count or upon Pd/Rh substitution. Also, the Rh L{sub 3} edge did not change. For two selected members, Ho{sub 2}PdSi{sub 3} and HoPd{sub 2}Si{sub 2}, the Wien2K’09 (LDA + U) package was used to calculate the electronic structure and the absorption edges. Si K edges were reproduced well for both compounds, while Pd L{sub 3} only exhibited a fair agreement for the second compound. This discrepancy between the Pd L{sub 3} theory and experiment for the Ho{sub 2}PdSi{sub 3} sample can be attributed to the specific ordered superstructure used in the numerical calculations

Evolution of Oxide Inclusions in Si-Mn Killed Steels During Hot-Rolling Process

Science.gov (United States)

Yang, Wen; Guo, Changbo; Zhang, Lifeng; Ling, Haitao; Li, Chao

2017-10-01

The evolution of oxide inclusions in Si-Mn killed steels refined by slags of different basicity during a four-pass industrial hot-rolling process was investigated using an automated microscopy system. High-basicity refining slag induced the formation of CaO- and Al2O3-containing inclusions, while refining slag with 0.8 basicity induced dominant inclusions of SiO2 and MnO-SiO2. CaO-SiO2-Al2O3 inclusions mainly formed endogenously during solidification and cooling of Ca-containing steels, where Ca originated from slag-steel reactions. However, the larger-sized higher-CaO inclusions originated from slag entrainment. Different inclusions presented different hot-rolling behaviors. The inclusion composition changed by deformation and new phase formation. The dominant oxide types were unchanged under refinement by low-basicity slag; however, they changed under refinement with high-basicity slag. The deformation index of inclusions decreased with increasing accumulated reduction (AR) of the steel. The difference in deformation index between different inclusion types was the largest in the first rolling stage and decreased in subsequent stages. SiO2-CaO and SiO2-MnO-CaO inclusions had larger deformation indices during hot rolling but smaller indices in the last two stages. High-basicity slag increased inclusion complexity; from the perspective of cold-drawing performance, low-basicity refining slag is better for the industrial production of tire-cord steels.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

International Nuclear Information System (INIS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-01-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Science.gov (United States)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2015-01-01

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

Selective silicate-directed motility in diatoms

DEFF Research Database (Denmark)

Bondoc, Karen Grace V.; Heuschele, Jan; Gillard, Jeroen

2016-01-01

the major sink in the global Si cycle. Dissolved silicic acid (dSi) availability frequently limits diatom productivity and influences species composition of communities. We show that benthic diatoms selectively perceive and behaviourally react to gradients of dSi. Cell speed increases under d...

Core–shell structured FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite cores with tunable insulating layer thicknesses

Energy Technology Data Exchange (ETDEWEB)

Fan, Xi’an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wang, Jian, E-mail: snove418562@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wu, Zhaoyang, E-mail: wustwuzhaoyang@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Li, Guangqiang, E-mail: ligq-wust@mail.wust.edu.cn [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China)

2015-11-15

Graphical abstract: - Highlights: • FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores were prepared. • SiO{sub 2} surrounding FeSiAl were replaced by Al{sub 2}O{sub 3} during sintering process. • Fe{sub 3}Si particles were separated by Al{sub 2}O{sub 3} with tunable thickness in composite cores. • Fe{sub 3}Si/Al{sub 2}O{sub 3} had lower core loss and better frequency stability than FeSiAl core. • The insulating layer between ferromagnetic particles can reduce core loss. - Abstract: FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses have been synthesized via a modified Stöber method combined with following high temperature sintering process. Most of the conductive FeSiAl particles could be coated by insulating SiO{sub 2} using the modified Stöber method. During the sintering process, the reaction 4Al + 3SiO{sub 2} ≣ 2α-Al{sub 2}O{sub 3} + 3Si took place and the new Fe{sub 3}Si/Al{sub 2}O{sub 3} composite was formed. The Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores displayed more excellent soft magnetic properties, better frequency stability at high frequencies, much higher resistivity and lower core loss than the raw FeSiAl core. Based on this, several types of FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses were selectively prepared by simply varying TEOS contents. The thickness of Al{sub 2}O{sub 3} insulating layer and resistivity of Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores increased with increasing the TEOS contents, while the permeability and core loss changed in the opposite direction.

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

Science.gov (United States)

Zhang, Ziyi; Yako, Motoki; Ju, Kan; Kawai, Naoyuki; Chaisakul, Papichaya; Tsuchizawa, Tai; Hikita, Makoto; Yamada, Koji; Ishikawa, Yasuhiko; Wada, Kazumi

2017-12-01

A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiNx) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiNx is precisely measured in the temperature range 24-76 °C using the SiNx rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiNx ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si3N4, while the value for the PVD-SiNx ring is slightly higher. Both SiNx rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiNx needs a high temperature annealing to reduce N-H bond absorption, it is concluded that PVD-SiNx is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a 'silicone' polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiNx rings is locked within 50 GHz at the same temperature range in the wavelength range 1460-1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al2O3, Ga2O3 Ta2O5, HfO2 and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer.

Science.gov (United States)

Zhang, Ziyi; Yako, Motoki; Ju, Kan; Kawai, Naoyuki; Chaisakul, Papichaya; Tsuchizawa, Tai; Hikita, Makoto; Yamada, Koji; Ishikawa, Yasuhiko; Wada, Kazumi

2017-01-01

A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN x ) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN x is precisely measured in the temperature range 24-76 °C using the SiN x rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN x ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si 3 N 4 , while the value for the PVD-SiN x ring is slightly higher. Both SiN x rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN x needs a high temperature annealing to reduce N-H bond absorption, it is concluded that PVD-SiN x is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a 'silicone' polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN x rings is locked within 50 GHz at the same temperature range in the wavelength range 1460-1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al 2 O 3 , Ga 2 O 3 Ta 2 O 5 , HfO 2 and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics

Colloidal GdVO4:Eu3+@SiO2 nanocrystals for highly selective and sensitive detection of Cu2+ ions

Science.gov (United States)

Liang, Yanjie; Noh, Hyeon Mi; Park, Sung Heum; Choi, Byung Chun; Jeong, Jung Hyun

2018-03-01

Nowadays, in view of health and safety demands, the controlled design of selective and sensitive sensors for Cu2+ detection is of considerable importance. Therefore, we construct herein core-shell colloidal GdVO4:Eu3+@SiO2 nanocrystals (NCs) as optical sensor for the detection of Cu2+, which were synthesized by a facile hydrothermal reaction and encapsulated with a uniform layer of ultrathin silica through a sol-gel strategy. The NCs present strong red emission due to energy transfer from VO43- groups to Eu3+ when exciting with ultraviolet (UV) light. This intense red emission from Eu3+ could be selectively quenched in the presence of Cu2+ in comparison to other metal ions and the limit of detection is as low as 80 nM in aqueous solution. It is revealed that the spectral overlap between the emission band of NCs and the absorption of Cu2+ accounts for this intriguing luminescence behavior. The detection ability is highly reversible by the addition of ethylenediaminetetraacetic acid (EDTA) with the recovery of almost 100% of the original luminescence. The luminescence quenching and recovery processes can be performed repeatedly with good sensing ability. These remarkable performances allow the colloidal GdVO4:Eu3+@SiO2 NCs a promising fluorescence chemosensor for detecting Cu2+ ions in aqueous solution.

SiPMs characterization and selection for the DUNE far detector photon detection system

Science.gov (United States)

Sun, Y.; Maricic, J.

2016-01-01

The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only work properly in LAr temperature, but also meet certain specifications for the life of the experiment. A comprehensive testing of SiPMs in cryostat is necessary since the datasheet provided by the manufactures in the market does not cover this temperature regime. This paper gives the detailed characterization results of SenSL C-Series 60035 SiPMs, including gain, dark count rate (DCR), cross-talk and after-pulse rate. Characteristic studies on SiPMs from other vendors are also discussed in order to avoid any potential problems associated with using a single source. Moreover, the results of the ongoing mechanical durability tests are shown for the current candidate, SenSL B/C-Series 60035 SiPMs.

Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

International Nuclear Information System (INIS)

Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

2012-01-01

The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

Entrance channel excitations in the 28Si + 28Si reaction

International Nuclear Information System (INIS)

Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

1991-01-01

Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

Grated waveguide-based optical cavities as compact sensors for sub-nanometre cantilever deflections, and small refractive-index changes

NARCIS (Netherlands)

Kauppinen, L.J.; Hoekstra, Hugo; Dijkstra, Mindert; de Ridder, R.M.; Krijnen, Gijsbertus J.M.; MacCraith, B; McDonagh, C.

2008-01-01

The paper reports on theoretical and experimental results of integrated optical (IO) cavities defined by grated waveguides in $Si_3N_4$ and Si, for the accurate detection of cantilever deflection and bulk index changes.

Effects of selected casting methods on mechanical behaviour of Al-Mg-Si alloy

Directory of Open Access Journals (Sweden)

Henry Kayode TALABI

2014-11-01

Full Text Available This study investigated the effects of selected casting methods on mechanical behaviour of Al-Mg-Si alloy. The casting methods used was spin, sand and die casting, these were done with a view to determine which of the casting methods will produce the best properties. The pure aluminium scrap, magnesium and silicon were subjected to chemical analysis using spectrometric analyzer, thereafter the charge calculation to determine the amount needed to be charged into the furnace was properly worked out and charged into the crucible furnace from which as-cast aluminium was obtained. The mechanical properties of the casting produced were assessed by hardness and impact toughness test. The optical microscopy and experimental density and porosity were also investigated. From the results it was observed that magnesium and silicon were well dispersed in aluminium matrix of the spin casting. It was observed from visual examination after machining that there were minimal defects. It was also observed that out of the three casting methods, spin casting possesses the best mechanical properties (hardness and impact toughness.

Highly selective and sensitive fluorogenic ferric probes based on aggregation-enhanced emission with - SiMe3 substituted polybenzene

Science.gov (United States)

Wang, Xuefeng; Wang, Hua; Jiang, Qin; Lee, Yong-Ill; Feng, Shengyu; Liu, Hong-Guo

2018-01-01

In this study, thiophene was linked to polybenzene to generate novel fluorescent probes, namely 3,4-diphenyl-2,5-di(2-thienyl)phenyl-trimethylsilane (DPTB-TMS) with a - SiMe3 substituent and 3,4-diphenyl-2,5-di(2-thienyl)phenyl (DPTB) without the - SiMe3 substituent, respectively. Both of the two compounds exhibit aggregation-enhanced emission (AEE) properties in tetrahydrofuran/water mixtures due to restricted intramolecular rotation of the peripheral groups, which make the two compounds good candidates for the detection of Fe3 + ions in aqueous-based solutions. The fluorescence intensity of the two compounds decreases immediately and obviously upon addition of a trace amount of Fe3 +, and decreases continuously as the amount of Fe3 + increases. The fluorescence was quenched to 92% of its initial intensity when the amount of Fe3 + ions reached 6 μmol for DPTB-TMS and to 80% for DPTB in the systems, indicating that the compound with the - SiMe3 group is a more effective probe. The detection limit was found to be 1.17 μM (65 ppb). The detection mechanism is proposed to be static quenching. DPTB-TMS is highly efficient for the detection of ferric ions even in the presence of other metal ions. In addition, the method is also successfully applied to the detection of ferric ions in water, blood serum, or solid films. This indicates that these polybenzene compounds can be applied as low-cost, high selectivity, and high efficiency Fe3 + probes in water or in clinical applications.

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

Monolayer assembly and striped architecture of Co nanoparticles on organic functionalized Si surfaces

Energy Technology Data Exchange (ETDEWEB)

Bae, S.-S.; Lim, D.K.; Park, J.-I.; Kim, S. [Korea Advanced Institute of Science and Technology, Department of Chemistry and School of Molecular Science (BK 21), Daejeon (Korea); Cheon, J. [Yonsei University, Department of Chemistry, College of Sciences, Seoul (Korea); Jeon, I.C. [Chonbuk National University, Department of Chemistry, College of Natural Sciences, Chonbuk (Korea)

2005-03-01

We present a new strategy to fabricate a monolayer assembly of Br-terminated Co nanoparticles on functionalized Si surfaces by using chemical covalent bonding and microcontact printing method. Self-assembled monolayers (SAMs) of the Co nanoparticles formed on the hydroxyl-terminated Si surface exhibit two-dimensional island networks with locally ordered arrays via covalent linkage between nanoparticles and surface. On the other hand, SAMs of the nanoparticles on the aminopropyl-terminated Si surface show an individual and random distribution over an entire surface. Furthermore, we have fabricated striped architectures of Co nanoparticles using a combination of microcontact printing and covalent linkage. Microcontact printing of octadecyltrichlorosilane and selective covalent linkage between nanoparticles and functionalized Si surfaces lead to a hybrid nanostructure with selectively assembled nanoparticles stripes on the patterned functionalized Si surfaces. (orig.)

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01

Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

On the Selective Laser Melting (SLM of the AlSi10Mg Alloy: Process, Microstructure, and Mechanical Properties

Directory of Open Access Journals (Sweden)

Francesco Trevisan

2017-01-01

Full Text Available The aim of this review is to analyze and to summarize the state of the art of the processing of aluminum alloys, and in particular of the AlSi10Mg alloy, obtained by means of the Additive Manufacturing (AM technique known as Selective Laser Melting (SLM. This process is gaining interest worldwide, thanks to the possibility of obtaining a freeform fabrication coupled with high mechanical properties related to a very fine microstructure. However, SLM is very complex, from a physical point of view, due to the interaction between a concentrated laser source and metallic powders, and to the extremely rapid melting and the subsequent fast solidification. The effects of the main process variables on the properties of the final parts are analyzed in this review: from the starting powder properties, such as shape and powder size distribution, to the main process parameters, such as laser power and speed, layer thickness, and scanning strategy. Furthermore, a detailed overview on the microstructure of the AlSi10Mg material, with the related tensile and fatigue properties of the final SLM parts, in some cases after different heat treatments, is presented.

On the Selective Laser Melting (SLM) of the AlSi10Mg Alloy: Process, Microstructure, and Mechanical Properties.

Science.gov (United States)

Trevisan, Francesco; Calignano, Flaviana; Lorusso, Massimo; Pakkanen, Jukka; Aversa, Alberta; Ambrosio, Elisa Paola; Lombardi, Mariangela; Fino, Paolo; Manfredi, Diego

2017-01-18

The aim of this review is to analyze and to summarize the state of the art of the processing of aluminum alloys, and in particular of the AlSi10Mg alloy, obtained by means of the Additive Manufacturing (AM) technique known as Selective Laser Melting (SLM). This process is gaining interest worldwide, thanks to the possibility of obtaining a freeform fabrication coupled with high mechanical properties related to a very fine microstructure. However, SLM is very complex, from a physical point of view, due to the interaction between a concentrated laser source and metallic powders, and to the extremely rapid melting and the subsequent fast solidification. The effects of the main process variables on the properties of the final parts are analyzed in this review: from the starting powder properties, such as shape and powder size distribution, to the main process parameters, such as laser power and speed, layer thickness, and scanning strategy. Furthermore, a detailed overview on the microstructure of the AlSi10Mg material, with the related tensile and fatigue properties of the final SLM parts, in some cases after different heat treatments, is presented.

IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

NARCIS (Netherlands)

Yang, G.; Ingenito, A.; Isabella, O.; Zeman, M.

2016-01-01

Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface

Beverage Selections and Impact on Healthy Eating Index Scores in Elementary Children's Lunches from School and from Home

Science.gov (United States)

Bergman, Ethan A.; Englund, Tim; Ogan, Dana; Watkins, Tracee; Barbee, Mary; Rushing, Keith

2016-01-01

Purpose/Objectives: The purposes of this study were to: 1) analyze beverage selections of elementary students consuming National School Lunch Program meals (NSLP) and lunches brought from home (LBFH), 2) compare overall meal quality (MQ) of NSLP and LBFH by food components using Healthy Eating Index 2010 (HEI-2010), and 3) investigate the impact…

Pre-validation Study of the Brazilian Version of the Disruptions in Surgery Index (DiSI) as a Safety Tool in Cardiothoracic Surgery

Science.gov (United States)

Nina, Vinicius José da Silva; Jatene, Fabio B.; Sevdalis, Nick; Mejía, Omar Asdrúbal Vilca; Brandão, Carlos Manuel de Almeida; Monteiro, Rosangela; Caneo, Luiz Fernando; Scudeller, Paula Gobi; Mendes, Augusto Dimitry; Mendes, Vinícius Giuliano; Romano, Bellkiss Wilma

2017-01-01

Introduction Most risk stratification scores used in surgery do not include external and non-technical factors as predictors of morbidity and mortality. Objective The present study aimed to translate and adapt transculturally the Brazilian version of the Disruptions in Surgery Index (DiSI) questionnaire, which was developed to capture the self-perception of each member of the surgical team regarding the disruptions that may contribute to error and obstruction of safe surgical flow. Methods A universalist approach was adopted to evaluate the conceptual equivalence of items and semantics, which included the following stages: (1) translation of the questionnaire into Portuguese; (2) back translation into English; (3) panel of experts to draft the preliminary version; and (4) pre-test for evaluation of verbal comprehension by the target population of 43 professionals working in cardiothoracic surgery. Results The questionnaire was translated into Portuguese and its final version with 29 items obtained 89.6% approval from the panel of experts. The target population evaluated all items as easy to understand. The mean overall clarity and verbal comprehension observed in the pre-test reached 4.48 ± 0.16 out of the maximum value of 5 on the psychometric Likert scale. Conclusion Based on the methodology used, the experts' analysis and the results of the pre-test, it is concluded that the essential stages of translation and cross-cultural adaptation of DiSI to the Portuguese language were satisfactorily fulfilled in this study. PMID:29267606

Pre-validation Study of the Brazilian Version of the Disruptions in Surgery Index (DiSI as a Safety Tool in Cardiothoracic Surgery

Directory of Open Access Journals (Sweden)

Vinicius José da Silva Nina

Full Text Available Abstract Introduction: Most risk stratification scores used in surgery do not include external and non-technical factors as predictors of morbidity and mortality. Objective: The present study aimed to translate and adapt transculturally the Brazilian version of the Disruptions in Surgery Index (DiSI questionnaire, which was developed to capture the self-perception of each member of the surgical team regarding the disruptions that may contribute to error and obstruction of safe surgical flow. Methods: A universalist approach was adopted to evaluate the conceptual equivalence of items and semantics, which included the following stages: (1 translation of the questionnaire into Portuguese; (2 back translation into English; (3 panel of experts to draft the preliminary version; and (4 pre-test for evaluation of verbal comprehension by the target population of 43 professionals working in cardiothoracic surgery. Results: The questionnaire was translated into Portuguese and its final version with 29 items obtained 89.6% approval from the panel of experts. The target population evaluated all items as easy to understand. The mean overall clarity and verbal comprehension observed in the pre-test reached 4.48 ± 0.16 out of the maximum value of 5 on the psychometric Likert scale. Conclusion: Based on the methodology used, the experts' analysis and the results of the pre-test, it is concluded that the essential stages of translation and cross-cultural adaptation of DiSI to the Portuguese language were satisfactorily fulfilled in this study.

Linking climate, gross primary productivity, and site index across forests of the western United States

Science.gov (United States)

Aaron R. Weiskittel; Nicholas L. Crookston; Philip J. Radtke

2011-01-01

Assessing forest productivity is important for developing effective management regimes and predicting future growth. Despite some important limitations, the most common means for quantifying forest stand-level potential productivity is site index (SI). Another measure of productivity is gross primary production (GPP). In this paper, SI is compared with GPP estimates...

On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

2016-01-01

The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

[The best noise index combined with ASIR weighting selection in low-dose chest scanning].

Science.gov (United States)

Xiao, Huijuan; Hou, Ping; Liu, Jie; Gao, Jianbo; Tan, Hongna; Liang, Pan; Pu, Shi

2015-10-06

To discuss the best noise index combined with ASIR weighting selection in low-dose chest scanning based on BMI. 200 patients collected from May to December 2014 underwent non-contrast chest CT examinations, they were randomly assigned into standard dose group (Group A, NI15 combined with 30% ASIR) and low-dose groups (Group B, NI25 combined with 40% ASIR, Group C, NI30 combined with 50% ASIR, Group D, NI35 combined with 60% ASIR), 50 cases in each group; the patients were assigned into three groups based on BMI (kg/m2): BMI25. Signal-to-nosie ratio (SNR), contrast-to noise ratio (CNR), CT dose index volume (CTDIvol), dose-length product (DLP), effective dose (ED) and subjective scoring between the standard and low-dose groups were compared and analyzed statistically. Differences of SNR, CNR, CTDIvol, DLP and ED among groups were determined with ANOVA analysis and the consistency of diagnosis with Kappa test. SNR, CTDIvol, DLP and ED reduced with the increase of nosie index, the differences among the groups were statistically significant (P25 kg/m2 group. NI35 combined with 60% ASIR in BMIASIR in 18.5 kg/m2≤BMI≤25 kg/m2 group; NI25 combined with 40% ASIR in 18.5 kg/m2≤BMI≤25 kg/m2 group were the best parameters combination which both can significantly reduce the radiation dose and ensure the image quality.

Sphericity index and E-point-to-septal-separation (EPSS) to diagnose dilated cardiomyopathy in Doberman Pinschers.

Science.gov (United States)

Holler, P J; Wess, G

2014-01-01

E-point-to-septal-separation (EPSS) and the sphericity index (SI) are echocardiographic parameters that are recommended in the ESVC-DCM guidelines. However, SI cutoff values to diagnose dilated cardiomyopathy (DCM) have never been evaluated. To establish reference ranges, calculate cutoff values, and assess the clinical value of SI and EPSS to diagnose DCM in Doberman Pinschers. One hundred seventy-nine client-owned Doberman Pinschers. Three groups were formed in this prospective longitudinal study according to established Holter and echocardiographic criteria using the Simpson method of disk (SMOD): control group (97 dogs), DCM with echocardiographic changes (75 dogs) and "last normal" group (n = 7), which included dogs that developed DCM within 1.5 years, but were still normal at this time point. In a substudy, dogs with early DCM based upon SMOD values above the reference range but still normal M-Mode measurements were selected, to evaluate if EPSS or SI were abnormal using the established cutoff values. ROC-curve analysis determined 6.5 mm for EPSS (sensitivity 100%; specificity 99.0%) as optimal cutoff values to diagnose DCM. Both parameters were significantly different between the control group and the DCM group (P < 0.001), but were not abnormal in the "last normal" group. In the substudy, EPSS was abnormal in 13/13 dogs and SI in 2/13 dogs. E-point-to-septal-separation is a valuable additional parameter for the diagnosis of DCM, which can enhance diagnostic capabilities of M-Mode and which performs similar as well as SMOD. Copyright © 2013 by the American College of Veterinary Internal Medicine.

Association and interaction between triglyceride-glucose index and obesity on risk of hypertension in middle-aged and elderly adults.

Science.gov (United States)

Jian, Song; Su-Mei, Nie; Xue, Chen; Jie, Zhang; Xue-Sen, Wu

2017-01-01

To investigate the association between triglyceride-glucose(TyG) index and the risk of hypertension. A cross-sectional study was conducted in Bengbu, China. The participants received relevant questionnaire survey, anthropometric tests, and laboratory examination. Multivariate logistic regression analysis was performed to estimate the possible association between TyG index and hypertension risk. The additive interaction evaluated by the relative excess risk due to interaction (RERI), attributable proportion due to interaction (AP), and synergy index(SI) was calculated. A total of 1777 participants (748 men and 1029 women) were investigated. There was a significant increase in the risk of hypertension and isolated systolic hypertension (ISH) when comparing the highest TyG index (the fourth quartile) to the lowest TyG index (the first quartile) and corresponding ORs were 2.446 (95% CI: 1.746-3.426) and 2.621(95%CI: 1.627-4.224), respectively. However, no significant relationship was observed between TyG index and isolated diastolic hypertension (IDH). In males, significant interactions between TyG index and WHtR (RERI:1.978, 95%CI: 0.162-3.792; AP: 0.359, 0.113-0.605; SI:1.782, 1.017-3.122), smoking (AP: 0.437, 95%CI: 0.048-0.825), family history of hypertension (AP:0.433, 95%CI: 0.203-0.662; SI:2.248, 95%CI: 1.333-3.791) were observed. As for females, there were also significant interactions between TyG index and WHtR (RERI:1.415, 95%CI: 0.693-2.136; AP: 0.198, 95%CI: 0.104-0.291; SI:1.298, 95%CI:1.101-1.530), family history of hypertension (RERI:1.744, 95%CI: 0.221-3.267; AP:0.405, 95%CI: 0.113-0.697) on risk of hypertension. Increased TyG index was significantly associated with higher risk of hypertension and ISH, but not for IDH in middle-aged and elderly adults. Our results also demonstrated interactions of TyG index and abdominal obesity and family history of hypertension on hypertension risk.

Naturally occurring 32 Si and low-background silicon dark matter detectors

Energy Technology Data Exchange (ETDEWEB)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

Science.gov (United States)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

Energy Technology Data Exchange (ETDEWEB)

Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2015-05-15

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

Interfacial engineering of solution-processed Ni nanochain-SiO{sub x} (x < 2) cermets towards thermodynamically stable, anti-oxidation solar selective absorbers

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaobai; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755 (United States); Zhang, Qinglin [Department of Chemical and Materials Engineering, University of Kentucky, 177 F. Paul Anderson Tower, Lexington, Kentucky 40506 (United States)

2016-04-07

Cermet solar thermal selective absorber coatings are an important component of high-efficiency concentrated solar power (CSP) receivers. The oxidation of the metal nanoparticles in cermet solar absorbers is a great challenge for vacuum-free operation. Recently, we have demonstrated that oxidation is kinetically retarded in solution processed, high-optical-performance Ni nanochain-SiO{sub x} cermet system compared to conventional Ni-Al{sub 2}O{sub 3} system when annealed in air at 450–600 °C for several hours. However, for long-term, high-temperature applications in CSP systems, thermodynamically stable antioxidation behavior is highly desirable, which requires new mechanisms beyond kinetically reducing the oxidation rate. Towards this goal, in this paper, we demonstrate that pre-operation annealing of Ni nanochain-SiO{sub x} cermets at 900 °C in N{sub 2} forms the thermodynamically stable orthorhombic phase of NiSi at the Ni/SiO{sub x} interfaces, leading to self-terminated oxidation at 550 °C in air due to this interfacial engineering. In contrast, pre-operation annealing at a lower temperature of 750 °C in N{sub 2} (as conducted in our previous work) cannot achieve interfacial NiSi formation directly, and further annealing in air at 450–600 °C for >4 h only leads to the formation of the less stable (metastable) hexagonal phase of NiSi. Therefore, the high-temperature pre-operation annealing is critical to form the desirable orthorhombic phase of NiSi at Ni/SiO{sub x} interfaces towards thermodynamically stable antioxidation behavior. Remarkably, with this improved interfacial engineering, the oxidation of 80-nm-diameter Ni nanochain-SiO{sub x} saturates after annealing at 550 °C in air for 12 h. Additional annealing at 550 °C in air for as long as 20 h (i.e., 32 h air annealing at >550 °C in total) has almost no further impact on the structural or optical properties of the coatings, the latter being very sensitive to any

White light emission from fluorescent SiC with porous surface

DEFF Research Database (Denmark)

Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

2017-01-01

We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3, the photol......We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3...... the bulk fuorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460nm and 530nm. Such bluegreen emission phenomenon can......, the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from...

Syntheses and characterization of novel P/Si polysilsesquioxanes/epoxy nanocomposites

International Nuclear Information System (INIS)

Chiu Yiechan; Liu Fangyi; Ma, C.-C.M.; Chou, I.-C.; Riang Linawati; Chiang, C.-L.; Yang, J.-C.

2008-01-01

Phosphorus-containing polysilsesquioxane (PSSQ) was introduced into diglycidyl ether of bisphenol A epoxy (DGEBA) to generate a novel P/Si PSSQ nanocomposite. A series of nanocomposites was fabricated by changing the content of the 2-(diphenylphosphino)ethyltriethoxysilane (DPPETES) monomer or P/Si PSSQ cured with DGEBA epoxy and modified epoxy. The structure, thermal properties and flame-retardancy of the P/Si PSSQ nanocomposites were characterized by FT-IR, solid-state 29 Si NMR, thermogravimetric analysis (TGA) and limited oxygen index (LOI) instruments. The nano-sizes of the particles in P/Si PSSQ were approximately 30-50 nm, and the polarity of nanocomposites might generate the nanophase-separated structure from transmission electron microscopy (TEM). The urethane-like side group of the modified epoxy and the fabrication of oligomers in the curing reaction affected the T d5 values of nanocomposites. TGA and LOI results indicated that the char yield (29 wt%) increased and the nanocomposites were not very flammable (LOI = 30). The hybrid materials also exhibited high thermal stability, good flame-retardance and a lack of phase separation

Effect of Si substitution on structural, electronic and optical properties of YNi{sub 4}Si-type DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) compounds

Energy Technology Data Exchange (ETDEWEB)

Maurya, Dinesh Kumar; Saini, Sapan Mohan, E-mail: smsaini.phy@nitrr.ac.in

2016-10-15

We employed first principle calculations for investigation of structural, electronic and optical properties of YNi{sub 4}Si-type DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) compounds. These properties are studied first time on YNi{sub 4}Si-type DyNi{sub 5−x}Si{sub x} compounds. The exchange and correlation potential is treated by the Coulomb corrected local spin density approximation (LSDA+U) method for better accounting of the correlation between the 4f electrons. The optimized lattice constants and internal cell parameters are in agreement with the available data. Self consistence band structure calculations show that Ni-3d states remains in valance band and dominant below the E{sub F}, while Dy-5d and 4f states mainly contributes above Fermi Energy (E{sub F}) in DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) compounds. We also find that when silicon for nickel substitution takes place (DyNi{sub 4}Si), there is a gradual hybridization of Ni-3d and Si-3p states results, nickel moments decrease rapidly in agreement with the experiment. Optical spectra shows the main absorption peak around 4 eV depends on the substituent concentration and could be due to transition from hybridized band (Ni-3d and Si-3p), below E{sub F} to free Dy-4d states. Frequency-dependent refractive index, n(ω), and the extinction coefficient, k(ω), of DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) are also calculated for the radiation up to 14 eV. - Highlights: • Calculated DOS revels that Ni-3d states are dominated below Fermi level (E{sub F}). • Spin down Dy-4f states show significant contribution to DOS above E{sub F.} • Nickel moments decrease rapidly with substitution of silicon for nickel (DyNi{sub 4}Si). • Most significant peak is found around 7eV in optical conductivity. • Nickel moments decrease rapidly with substitution of silicon for nickel (DyNi{sub 4}Si). • Peak indicates the possibility of transitions from Ni-3d states to empty spin down Dy-4f states.

SiGe/Si layers-early stages of plastic relaxation

International Nuclear Information System (INIS)

Koehler, R; Raidt, H; Neumann, W; Pfeiffer, J-U; Schaefer, H; Richter, U

2005-01-01

The plastic relaxation of SiGe/Si is closely related to the nucleation of misfit dislocations at early stages. We have investigated the very early stages at annealing temperatures ranging from 520 deg. C to 670 deg. C by means of x-ray topography (XRT), atomic force microscopy (AFM) and transmission electron microscopy. At misfit dislocation densities within the range accessible by XRT, i.e. up to about 1000 cm -1 , dislocations bundles predominate. This is verified by AFM and is explained by heterogeneous nucleation. The fewer the dislocations that are contained within dislocation bundles the rarer the blocking and cross slip that are observed. It is demonstrated that laser heating increases the number of nucleation centres drastically and is well suited to induce nucleation at selected sites. Furthermore, these nucleation centres provide dislocation bundles containing only a few dislocations. In contrast to this, implantation can produce defects that stop dislocation propagation quite effectively at the comparatively low temperatures used in our experiments

Differences in Strike Index Between Treadmill and Aquatic Treadmill Running in Experienced Distance Runners

OpenAIRE

Hoover, James Paul, Jr.

2014-01-01

Strike index (SI) quantifies how one’s foot contacts the ground at the beginning of the stance phase of gait. SI is reported as a percentage of the total foot length, with lower percentages indicating a more posterior point of contact, while greater percentages indicate a more anterior point of contact along the foot. Differences in SI may be related to running-related injuries, such that experienced distance runners who are rearfoot (posterior) strikers may have approximately twice the rate ...

On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si

International Nuclear Information System (INIS)

Diplas, S.; Ulyashin, A.; Maknys, K.; Gunnaes, A.E.; Jorgensen, S.; Wright, D.; Watts, J.F.; Olsen, A.; Finstad, T.G.

2007-01-01

Indium-tin-oxide (ITO) antireflection coatings were deposited on crystalline Si (c-Si), amorphous hydrogenated Si (a-Si:H) and glass substrates at room temperature (RT), 160 deg. C and 230 deg. C by magnetron sputtering. The films were characterised using atomic force microscopy, transmission electron microscopy, angle resolved X-ray photoelectron spectroscopy, combined with resistance and transmittance measurements. The conductivity and refractive index as well as the morphology of the ITO films showed a significant dependence on the processing conditions. The films deposited on the two different Si substrates at higher temperatures have rougher surfaces compared to the RT ones due to the development of crystallinity and growth of columnar grains

Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

Energy Technology Data Exchange (ETDEWEB)

Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

2017-01-15

particular we monitored the UV light soaking effect on c-Si wafers after a-SiO{sub x}:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiO{sub x}:H/c-Si interface considering the evolution of hydrogen in the film revealed by FTIR spectra, and we developed a model for the effect of both treatments on the Si−H bonding and the metastability shown in the lifetime of a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. We found that, after UV exposure, thermal annealing steps can be used as a tool for the c-Si passivation recovery and enhancement.

Mechanism of Properties of Noble ZnS-SiO2 Protection Layer for Phase Change Optical Disk Media

Science.gov (United States)

Tsu, David V.; Ohta, Takeo

2006-08-01

A ZnS-SiO2 composite dielectric is widely used in the optical stack designs of rewritable optical recording media as an index-matching medium and as a protection layer for the high-index chalcogenide (compound with sixth group element of S, Se, Te) phase change material used in these media. The addition of Si and O to ZnS is primarily intended to stabilize against crystalline grain growth of ZnS with high numbers of direct overwriting cycles. In this study, we carry out infrared (IR) spectroscopy to clarify the role of Si in this stabilization process. IR spectroscopy is performed on sputter as-deposited and annealed ZnS-SiO2 dielectric protection layers. We find that Si exists not in the SiO2 oxide phase but as [SiS4-nOn] tetrahedrons. Moreover, zinc and sulfur do not exist as ZnS, but in highly chemically disordered ZnS:O crystallites. The highly directional and rigid covalent bonds in the [SiS4-nOn] tetrahedrons are key to establishing thermal stability against the coalescence of ZnS. The importance of the Si-S bond also extends into a more thorough understanding of the low thermal conductivity of the ZnS-SiO2 material. The consideration of elastic implications allows us to predict an average phonon velocity less than 50% compared to that in SiO2. With this, we predict a thermal conductivity of 0.0067 W cm-1 K-1 for this material, which is in complete agreement with measured values.

Sub-barrier fusion of Si+Si systems

Science.gov (United States)

Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

2017-11-01

The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

Sub-barrier fusion of Si+Si systems

Directory of Open Access Journals (Sweden)

Colucci G.

2017-01-01

Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2010-07-15

We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

International Nuclear Information System (INIS)

Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

2011-01-01

Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

Selective degradation of model pollutants in the presence of core@shell TiO{sub 2}@SiO{sub 2} photocatalyst

Energy Technology Data Exchange (ETDEWEB)

Nadrah, Peter, E-mail: peter.nadrah@zag.si [Slovenian National Building and Civil Engineering Institute, Dimičeva ul. 12, SI-1000 Ljubljana (Slovenia); Gaberšček, Miran [National Institute of Chemistry, Hajdrihova ul. 19, SI-1000 Ljubljana (Slovenia); Sever Škapin, Andrijana [Slovenian National Building and Civil Engineering Institute, Dimičeva ul. 12, SI-1000 Ljubljana (Slovenia)

2017-05-31

Highlights: • TiO{sub 2} encapsulated in mesoporous silica exhibits selective photocatalytic degradation of low-molecular-weight molecules. • Core@shell photocatalyst degrades rhodamine B in presence of fivefold mass concentration of starch, while pure TiO{sub 2} does not. • Potential use for removing water pollutants, while retaining non-harmful and beneficial macromolecules. - Abstract: Photocatalytic TiO{sub 2} degrades organic matter unselectively. However, in certain applications, such as degradation of pollutants, selectivity towards pollutants is beneficial. We synthesized core@shell TiO{sub 2}@SiO{sub 2} nanoparticles with photocatalytic activity featuring a significantly faster preferential degradation of model pollutant (rhodamine B) in presence of abundant concentration of natural organic matter compared to pure TiO{sub 2} (P25). The material’s photocatalytic activity was tested in aqueous medium. The selectivity of prepared effect of core@shell materials is explained based on transmission electron microscopy, nitrogen adsorption, X-ray powder diffraction and zeta potential measurements.

Highly Selective Continuous Flow Hydrogenation of Cinnamaldehyde to Cinnamyl Alcohol in a Pt/SiO2 Coated Tube Reactor

Directory of Open Access Journals (Sweden)

Yang Bai

2018-02-01

Full Text Available A novel continuous flow process for selective hydrogenation of α, β-unsaturated aldehyde (cinnamaldehyde, CAL to the unsaturated alcohol (cinnamyl alcohol, COL has been reported in a tube reactor coated with a Pt/SiO2 catalyst. A 90% selectivity towards the unsaturated alcohol was obtained at the aldehyde conversion of 98.8%. This is a six-fold improvement in the selectivity compared to a batch process where acetals were the main reaction products. The increased selectivity in the tube reactor was caused by the suppression of acid sites responsible for the acetal formation after a short period on stream in the continuous process. In a fixed bed reactor, it had a similar acetal suppression phenomenon but showed lower product selectivity of about 47–72% due to mass transfer limitations. A minor change in selectivity and conversion caused by product inhibition was observed during the 110 h on stream with a turnover number (TON reaching 3000 and an alcohol production throughput of 0.36 kg gPt−1 day−1 in the single tube reactor. The catalysts performance after eight reaction cycles was fully restored by calcination in air at 400 °C. The tube reactors provide an opportunity for process intensification by increasing the reaction rates by a factor of 2.5 at the reaction temperature of 150 °C compared to 90 °C with no detrimental effects on catalyst stability or product selectivity.

Clustering of financial time series with application to index and enhanced index tracking portfolio

Science.gov (United States)

Dose, Christian; Cincotti, Silvano

2005-09-01

A stochastic-optimization technique based on time series cluster analysis is described for index tracking and enhanced index tracking problems. Our methodology solves the problem in two steps, i.e., by first selecting a subset of stocks and then setting the weight of each stock as a result of an optimization process (asset allocation). Present formulation takes into account constraints on the number of stocks and on the fraction of capital invested in each of them, whilst not including transaction costs. Computational results based on clustering selection are compared to those of random techniques and show the importance of clustering in noise reduction and robust forecasting applications, in particular for enhanced index tracking.

A Universal Approach for Selective Trace Metal Determinations via Sequential Injection-Bead Injection-Lab-on-Valve (SI-BI-LOV) Using Renewable Reagent-loaded Hydrophobic Beads

DEFF Research Database (Denmark)

Long, Xiangbao; Miró, Manuel; Hansen, Elo Harald

-Lab-on-Valve (SI-LOV) mode. The methodology uses poly(styrene-divinylbenzene) beads containing pendant octadecyl moieties (C18-PS/DVB), which are pre-impregnated with a selective organic metal chelating agent prior to the automatic manipulation of the beads in the microbore conduits of the LOV unit. By adapting...

Site-specific forest-assembly of single-wall carbon nanotubes on electron-beam patterned SiOx/Si substrates

International Nuclear Information System (INIS)

Wei Haoyan; Kim, Sang Nyon; Kim, Sejong; Huey, Bryan D.; Papadimitrakopoulos, Fotios; Marcus, Harris L.

2008-01-01

Based on electron-beam direct writing on the SiO x /Si substrates, favorable absorption sites for ferric cations (Fe 3+ ions) were created on the surface oxide layer. This allowed Fe 3+ -assisted self-assembled arrays of single-wall carbon nanotube (SWNT) probes to be produced. Auger investigation indicated that the incident energetic electrons depleted oxygen, creating more dangling bonds around Si atoms at the surface of the SiO x layer. This resulted in a distinct difference in the friction forces from unexposed regions as measured by lateral force microscopy (LFM). Atomic force microscopy (AFM) affirmed that the irradiated domains absorbed considerably more Fe 3+ ions upon immersion into pH 2.2 aqueous FeCl 3 solution. This rendered a greater yield of FeO(OH)/FeOCl precipitates, primarily FeO(OH), upon subsequent washing with lightly basic dimethylformamide (DMF) solution. Such selective metal-functionalization established the basis for the subsequent patterned forest-assembly of SWNTs as demonstrated by resonance Raman spectroscopy

Processing of poly-Si electrodes for charge-coupled devices

Energy Technology Data Exchange (ETDEWEB)

Sherohman, J.W.; Cook, F.D.

1978-12-06

A technique has been developed to fabricate poly-Si electrodes for charge-coupled devices. By controlling the microstructure of a poly-Si film, an anisotropic etchant was selected to provide essentially uniform electrode width dimensions. The electrode widths have only a 6% variation for the majority of the devices over the area of a 2 inch silicon wafer.

Creep behavior for advanced polycrystalline SiC fibers

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

1997-04-01

A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

Joining of SiC ceramics and SiC/SiC composites

Energy Technology Data Exchange (ETDEWEB)

Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

1996-08-01

This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

Designing an early selection morphological linear traits index for dressage in the Pura Raza Español horse.

Science.gov (United States)

Sánchez-Guerrero, M J; Cervantes, I; Molina, A; Gutiérrez, J P; Valera, M

2017-06-01

Making a morphological pre-selection of Pura Raza Español horses (PRE) for dressage is a challenging task within its current breeding program. The aim of our research was to design an early genetic selection morphological linear traits index to improve dressage performance, using 26 morphological linear traits and six dressage traits (walk, trot, canter, submission, general impression - partial scores - and total score) as selection criteria. The data set included morphological linear traits of 10 127 PRE (4159 males and 5968 females) collected between 2008 and 2013 (one record per horse) and 19 095 dressage traits of 1545 PRE (1476 males and 69 females; 12.4 records of average) collected between 2004 and 2014. A univariate animal model was applied to predict the breeding values (PBV). A partial least squares regression analysis was used to select the most predictive morphological linear traits PBV on the dressage traits PBV. According to the Wold Criterion, the 13 morphological linear traits (width of head, head-neck junction, upper neck line, neck-body junction, width of chest, angle of shoulder, lateral angle of knee, frontal angle of knee, cannon bone perimeter, length of croup, angle of croup, ischium-stifle distance and lateral hock angle) most closely related to total score PBV, partial scores PBV and gait scores PBV (walk, trot and canter) were selected. A multivariate genetic analysis was performed among the 13 morphological linear traits selected and the six dressage traits to estimate the genetic parameters. After it, the selection index theory was used to compute the expected genetic response using different strategies. The expected genetic response of total score PBV (0.76), partial scores PBV (0.04) and gait scores PBV (0.03) as selection objectives using morphological linear traits PBV as criteria selection were positive, but lower than that obtained using dressage traits PBV (1.80, 0.16 and 0.14 for total score PBV, partial scores PBV and gait

Microstructural and optical properties of A-Si: H deposited by DC plasma glow discharge of electrode polarity

International Nuclear Information System (INIS)

Salam, R.; Danker, A.R.

1993-01-01

A method for deducing the density of valence electrons and the average atomic separation of Si atoms in a-Si:H are presented. Refractive index and optical absorption experimental data on a variety of dc glow discharge deposited a-Si:H samples are utilized to deduce the two parameters. The density of valence electrons depict values in the range (1.47-6.15)x10 22 cm -3 while the average atomic spacing varies within 3.13-4.61 A. The existence of microvoids and regions of rich silicon-hydride phase are proposed to account for this. Comparisons of the electrical conductivity, optical parameters and vibrational modes are done for cathode and anode deposited a-Si:H samples. Conductivity for both types of samples are the same at around 1.3x10 -9 (Ωcm) -1 , but significant differences are observed in the values of the refractive index n and the optical gap Eg of the cathode (4.06, 1.95 eV) and anode (3.13, 2.34 eV) samples. Observations on the infrared spectrum of the two a-Si:H samples suggests that the anode sample contain appreciable amount and a higher proportion of oxygen, as identified by the 2080cm -1 shift of the Si-H stretching mode, while a strong Si-H 3 symmetric deformation mode is proposed to occur in the cathode sample

A direct-gradient multivariate index of biotic condition

Science.gov (United States)

Miranda, Leandro E.; Aycock, J.N.; Killgore, K. J.

2012-01-01

Multimetric indexes constructed by summing metric scores have been criticized despite many of their merits. A leading criticism is the potential for investigator bias involved in metric selection and scoring. Often there is a large number of competing metrics equally well correlated with environmental stressors, requiring a judgment call by the investigator to select the most suitable metrics to include in the index and how to score them. Data-driven procedures for multimetric index formulation published during the last decade have reduced this limitation, yet apprehension remains. Multivariate approaches that select metrics with statistical algorithms may reduce the level of investigator bias and alleviate a weakness of multimetric indexes. We investigated the suitability of a direct-gradient multivariate procedure to derive an index of biotic condition for fish assemblages in oxbow lakes in the Lower Mississippi Alluvial Valley. Although this multivariate procedure also requires that the investigator identify a set of suitable metrics potentially associated with a set of environmental stressors, it is different from multimetric procedures because it limits investigator judgment in selecting a subset of biotic metrics to include in the index and because it produces metric weights suitable for computation of index scores. The procedure, applied to a sample of 35 competing biotic metrics measured at 50 oxbow lakes distributed over a wide geographical region in the Lower Mississippi Alluvial Valley, selected 11 metrics that adequately indexed the biotic condition of five test lakes. Because the multivariate index includes only metrics that explain the maximum variability in the stressor variables rather than a balanced set of metrics chosen to reflect various fish assemblage attributes, it is fundamentally different from multimetric indexes of biotic integrity with advantages and disadvantages. As such, it provides an alternative to multimetric procedures.

Si cycling in a forest biogeosystem - the importance of anthropogenic perturbation and induced transient state of biogenic Si pools

Science.gov (United States)

Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Puppe, D.; Wanner, M.; Kaczorek, D.

2012-12-01

The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to total DSi (Gerard et~al., 2008). However, the actual number of biogeosystem studies is rather limited for generalised conclusions. To cover one end of controlling factors on DSi - weatherable minerals content - we studied a~forested site with absolute quartz dominance (> 95%). Hence, we hypothesise minimal effects of chemical weathering of silicates on DSi. During a~four year observation period (May 2007-April 2011) we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (vers. ZALF), (ii) related Si budgets, and, (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time both compartments of biogenic Si in soils were analysed, i.e. phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. High DSi concentrations (6 mg l-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic phytolith Si pool seems to be the main process for the DSi observed. We identified forest management, i.e. selective extraction of pine trees 20 yr ago followed by a disappearance of grasses, as the most probable control for the phenomena observed and hypothesised the biogeosystem to be in a transient state in terms of Si cycling.

Estimation of Physiological Cost Index as an Energy Expenditure Index using MacGregor’s Equation

Directory of Open Access Journals (Sweden)

Binaya SJB Rana

2015-09-01

Full Text Available Introduction: Physical activity and energy expenditure can be quantified by measuring heart rate, oxygen uptake and respiratory quotient. The Physiological Cost Index (PCI proposed by MacGregor is a simple and straightforward method to estimate the energy expenditure index. Here, we aim to estimate the energy expenditure among young Asian population using MacGregor’s equation. Methods: A total of 50 young randomly selected healthy females performed 50m, 100m and 150m walking test at their self-selected preferred speed. The physiological cost index values for 100 m walk at speeds slower and faster than the preferred speed were also obtained. The physiological cost index during exercise was calculated using MacGregor’s equation considering heart rate and speed of walking over the varying distances. Results: The PCI values on three different distances are consistent during self selected preferred speed. The PCI estimation on second and third tests for all three distances walked consistently reproducible. However for each distance walked, the first test the PCI was significantly higher than the second and third test values. The PCI values increased significantly when subjects walked either slower (p = 0.02 or faster (p = 0.001 than their normal preferred speed. Conclusion: The physiological cost index values were similar for varying distances walks. The PCI was the least at the preferred speed of walking and increased when the subjects either walked slower or faster than the preferred speed. The first estimation was higher than subsequent estimations. Keywords: energy expenditure index; exercise; physiological cost index. | PubMed

Index to conference titles: selected conferences cited in the Energy Data Base 1977-1982

International Nuclear Information System (INIS)

Vannoy, D.M.

1982-05-01

This publication cites energy-related conferences, meetings, symposia, and congresses within the programmatic interests of the US Department of Energy. It supplements Index to Conference Titles: Selected Conferences Cited in the ERDA Data Base 1972-1977, TIC-4045-S1, August 1977, and includes conferences held since January 1, 1977, which have been assigned a number in the CONF- report number series. The CONF- number is a six- or seven-digit code. The first two digits represent the years in which the conference was held; the next two represent the month; and the remaining digits are the accession number assigned by the DOE Technical Information Center

Selective Oxidation of a 0.1C-6Mn-2Si Third Generation Advanced High-Strength Steel During Dew-Point Controlled Annealing

Science.gov (United States)

Pourmajidian, Maedeh; McDermid, Joseph R.

2018-03-01

The present study investigates the selective oxidation of a 0.1C-6Mn-2Si medium-Mn advanced high-strength steel during austenization annealing heat treatments as a function of process atmosphere oxygen partial pressure and annealing time. It was determined that the surface oxide growth kinetics followed a parabolic rate law with the minimum rate belonging to the lowest oxygen partial pressure atmosphere at a dew point of 223 K (- 50 °C). The chemistry of the surface and subsurface oxides was studied using STEM + EELS on the sample cross sections, and it was found that the surface oxides formed under the 223 K (- 50 °C) dew-point atmosphere consisted of a layered configuration of SiO2, MnSiO3, and MnO, while in the case of the higher pO2 process atmospheres, only MnO was detected at the surface. Consistent with the Wagner calculations, it was shown that the transition to internal oxidation for Mn occurred under the 243 K (- 30 °C) and 278 K (+ 5 °C) dew-point atmospheres. However, the predictions of the external to internal oxidation for Si using the Wagner model did not correlate well with the experimental findings nor did the predictions of the Mataigne et al. model for multi-element alloys. Investigations of the internal oxide network at the grain boundaries revealed a multilayer oxide structure composed of amorphous SiO2 and crystalline MnSiO3, respectively, at the oxide core and outer shell. A mechanism for the formation of the oxide morphologies observed, based on kinetic and thermodynamic factors, was proposed. It is expected that only the fine and nodule-like MnO oxides formed on the surface of the samples annealed under the 278 K (+ 5 °C) dew-point process atmosphere for 60 and 120 seconds are sufficiently thin and of the desired dispersed morphology to promote reactive wetting by the molten galvanizing bath.

Experimental comparison between speech transmission index, rapid speech transmission index, and speech intelligibility index.

Science.gov (United States)

Larm, Petra; Hongisto, Valtteri

2006-02-01

During the acoustical design of, e.g., auditoria or open-plan offices, it is important to know how speech can be perceived in various parts of the room. Different objective methods have been developed to measure and predict speech intelligibility, and these have been extensively used in various spaces. In this study, two such methods were compared, the speech transmission index (STI) and the speech intelligibility index (SII). Also the simplification of the STI, the room acoustics speech transmission index (RASTI), was considered. These quantities are all based on determining an apparent speech-to-noise ratio on selected frequency bands and summing them using a specific weighting. For comparison, some data were needed on the possible differences of these methods resulting from the calculation scheme and also measuring equipment. Their prediction accuracy was also of interest. Measurements were made in a laboratory having adjustable noise level and absorption, and in a real auditorium. It was found that the measurement equipment, especially the selection of the loudspeaker, can greatly affect the accuracy of the results. The prediction accuracy of the RASTI was found acceptable, if the input values for the prediction are accurately known, even though the studied space was not ideally diffuse.

Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

International Nuclear Information System (INIS)

Kheyri, A.; Nourbakhsh, Z.; Darabi, E.

2016-01-01

The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

Energy Technology Data Exchange (ETDEWEB)

Kheyri, A. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Nourbakhsh, Z., E-mail: z.nourbakhsh@sci.ui.ac.ir [Physics Department, Faculty of Science, University of Isfahan, Isfahan (Iran, Islamic Republic of); Darabi, E. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2016-08-01

The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

Directory of Open Access Journals (Sweden)

Sangsoo Lee

2014-07-01

Full Text Available The advanced solid phase crystallization (SPC method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.

On the Selection of Optimal Index Configuration in OO Databases

NARCIS (Netherlands)

Choenni, R.S.; Bertino, E.; Blanken, Henk; Chang, S.C.

An operation in object-oriented databases gives rise to the processing of a path. Several database operations may result into the same path. The authors address the problem of optimal index configuration for a single path. As it is shown an optimal index configuration for a path can be achieved by

Opportunity for natural selection among some selected population groups of Northeast India.

Science.gov (United States)

Das, Farida Ahmed; Mithun, Sikdar

2010-05-01

Selection potential based on differential fertility and mortality has been computed for seven population groups inhabiting different geographical locations of Northeast India. Crow's as well as Johnston and Kensinger's index have been used for the present purpose. Irrespective of the methodology, the total index of selection was found to be highest among the Deoris followed by the Kaibartas. The lowest selection index was found among the Oraon population. If the relative contribution of fertility and mortality components to the total index is considered to be multiplicative, it is observed that in all these communities the fertility component exceeds that of mortality component, which may indicate initiation of demographic transitional phase in the selected populations with the betterment of healthcare and socioeconomic condition within the last few decades.

Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

International Nuclear Information System (INIS)

Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

2011-01-01

The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

Progress in the development of a SiC{sub f}/SiC creep test

Energy Technology Data Exchange (ETDEWEB)

Hamilton, M.L.; Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Garner, F.A. [Pacific Northwest National Lab., Richland, WA (United States); Hecht, S.L.

1996-10-01

An effort is now underway to design an experiment that will allow the irradiation creep behavior of SiC{sub f}/SiC composites to be quantified. Numerous difficulties must be overcome to achieve this goal, including determining an appropriate specimen geometry that will fit their radiation volumes available and developing a fabrication procedure for such a specimen. A specimen design has been selected, and development of fabrication methods is proceeding. Thermal and stress analyses are being performed to evaluate the viability of the specimen and to assist with determining the design parameters. A possible alternate type of creep test is also being considered. Progress in each of these areas is described in this report.

Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

International Nuclear Information System (INIS)

Liu Hongfei; Tan Chengcheh; Chi Dongzhi

2012-01-01

β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

Foaming Index of CaO-SiO2-FeO-MgO Slag System

Science.gov (United States)

Park, Youngjoo; Min, Dong Joon

A study on the effect of FeO and MgO content on foaming index in EAF slag system was carried out. The height of the slag foam was measured by electric probe maintaining steady state in gas formation and escape. Foaming index, which is the measurement of gas capturing potential of the slag, is calculated from the foam height and gas flow rate. Viscosity and surface tension, which are the key properties for the foaming index, are calculated by Urbain's model and additive method, respectively. Dimensional analysis also performed to determine the dominancy of properties and resulted that the important factor was a ratio between viscosity and surface tension. The effect of each component on the viscosity, surface tension and foaming index of the slag is evaluated to be in strong relationship.

Effect of ozone treatment on the optical and electrical properties of HfSiO thin films

International Nuclear Information System (INIS)

Geng, Yang; Yang, Wen; Zhu, Shang-Bin; Zhang, Yuan; Sun, Qing-Qing; Lu, Hong-Liang; Zhang, David Wei

2014-01-01

The effect of room temperature ozone oxidation treatment on thin HfSiO film grown by atomic layer deposition (ALD) has been investigated. The optical and electrical properties with different post-ozone oxidation time were characterized. The evolution of ozone interacting with HfSiO films was clearly illuminated. Ozone can repair the lossy chemical bonds and vacancies, resulting in the improvement of packing density and polarizability of HfSiO films. With more ozone entering the HfSiO films, the refractive index, dielectric constant, and interfacial properties can be greatly upgraded. Furthermore, the frequency dispersion of ALD-HfSiO film can be improved after O 3 treatment time for 8 min. (orig.)

Recent advances in mechanism-based chemotherapy drug-siRNA pairs in co-delivery systems for cancer: A review.

Science.gov (United States)

Wang, Mingfang; Wang, Jinyu; Li, Bingcheng; Meng, Lingxin; Tian, Zhaoxing

2017-09-01

Co-delivery of chemotherapy drugs and siRNA for cancer therapy has achieved remarkable results according to synergistic/combined antitumor effects, and is recognized as a promising therapeutic modality. However, little attention has been paid to the extremely complex mechanisms of chemotherapy drug-siRNA pairs during co-delivery process. Proper selection of chemotherapy drug-siRNA pairs is beneficial for achieving desirable cancer therapeutic effects. Exploring the inherent principles during chemotherapy drug-siRNA pair selection for co-delivery would greatly enhanced therapeutic efficiency. To achieve ideal results, this article will systematically review current different mechanism-based chemotherapy drug-siRNA pairs for co-delivery in cancer treatment. Large-scale library screening of recent different chemotherapy drug-siRNA pairs for co-delivery would help to establish the chemotherapy drug-siRNA pair selection principle, which could pave the way for co-delivery of chemotherapy drugs and siRNA for cancer treatment in clinic. Following the inherent principle of chemotherapy drug-siRNA pair, more effective co-delivery vectors can be designed in the future. Copyright © 2017 Elsevier B.V. All rights reserved.

Application of the isotopic index in isotope geochemical investigation

International Nuclear Information System (INIS)

Schuetze, H.

1982-06-01

A method is described which allows to calculate approximately isotope exchange equilibria between different crystalline silicates. The algorithm uses a newly introduced isotopic index. It is defined using isotopic increments of the variant types of silicatic bonds. This isotopic index gives a quantitative measure of the ability to enrich 18 O or 30 Si, respectively. The dependence of isotopic fractionations on temperature can be calculated approximately by means of the isotopic index, too. On this theoretical base some problems of magmatism and two varieties of an isotope geochemical model of the evolution of the Earth's crust are treated. Finally, the possibility is demonstrated to give prognostic statements about the likelihood of ore bearing of different granites. (author)

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

Science.gov (United States)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

Immobilization of streptavidin on 4H-SiC for biosensor development

International Nuclear Information System (INIS)

Williams, Elissa H.; Davydov, Albert V.; Motayed, Abhishek; Sundaresan, Siddarth G.; Bocchini, Peter; Richter, Lee J.; Stan, Gheorghe; Steffens, Kristen; Zangmeister, Rebecca; Schreifels, John A.; Rao, Mulpuri V.

2012-01-01

A sequential layer formation chemistry is demonstrated for the functionalization of silicon carbide (SiC) appropriate to biosensing applications. (0 0 0 1) 4H-SiC was functionalized with 3-aminopropyltriethoxysilane (APTES) and subsequently biotinylated for the selective immobilization of streptavidin. Atomic force microscopy, X-ray photoelectron spectroscopy, ellipsometry, fluorescence microscopy, and contact angle measurements were utilized to determine the structure, thickness, wettability, and reactivity of the resulting surface after each functionalization step. Optimization of the APTES layer was found to be critical to the success of the subsequent steps; multilayer, polymeric films resulted in irreproducible behavior. It was shown that there was significant non-specific (electrostatic) binding of streptavidin to APTES functionalized SiC, thus revealing the importance of a uniform biotinylation step prior to streptavidin attachment. The experimental results demonstrate that the APTES functionalized and biotinylated SiC surface has the potential to be employed as a biosensing platform for the selective detection of streptavidin molecules.

Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

Directory of Open Access Journals (Sweden)

Dan Zhu

2014-03-01

Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

A Sustainability Index of potential co-location of offshore wind farms and open water aquaculture

DEFF Research Database (Denmark)

Bennassai, G.; Mariani, Patrizio; Stenberg, Claus

2014-01-01

This paper presents the definition of a Sustainability Index for the co-location in marine areas of offshore wind farms and aquaculture plans. The development of the index is focused on the application of MCE technique based on physical constraints and biological parameters that are directly linked...... to the primary production. The relevant physical factors considered are wind velocity and depth range (which directly governs the choice of the site for energy production and for offshore technology), the relevant biological parameters are SST, SST anomaly and CHL-a concentration (as a measurement...... the computation of the Sustainability Index (SI) was identified in the Danish portion of the Baltic Sea and in the western part of the Danish North Sea. Results on the spatial distribution of the SI underline different responses as a function of the physical and biological main influencing parameters...

Evaluation of genomic selection for replacement strategies using selection index theory.

Science.gov (United States)

Calus, M P L; Bijma, P; Veerkamp, R F

2015-09-01

Our objective was to investigate the economic effect of prioritizing heifers for replacement at the herd level based on genomic estimated breeding values, and to compute break-even genotyping costs across a wide range of scenarios. Specifically, we aimed to determine the optimal proportion of preselection based on parent average information for all scenarios considered. Considered replacement strategies include a range of different selection intensities by considering different numbers of heifers available for replacement (15-45 in a herd with 100 dairy cows) as well as different replacement rates (15-40%). Use of conventional versus sexed semen was considered, where the latter resulted in having twice as many heifers available for replacement. The baseline scenario relies on prioritization of replacement heifers based on parent average. The first alternative scenario involved genomic selection of heifers, considering that all heifers were genotyped. The benefits of genomic selection in this scenario were computed using a simple formula that only requires the number of lactating animals, the difference in accuracy between parent average and genomic selection (GS), and the selection intensity as input. When all heifers were genotyped, using GS for replacement of heifers was beneficial in most scenarios for current genotyping prices, provided some room exists for selection, in the sense that at least 2 more heifers are available than needed for replacement. In those scenarios, minimum break-even genotyping costs were equal to half the economic value of a standard deviation of the breeding goal. The second alternative scenario involved a preselection based on parent average, followed by GS among all the preselected heifers. It was in almost all cases beneficial to genotype all heifers when conventional semen was used (i.e., to do no preselection). The optimal proportion of preselection based on parent average was at least 0.63 when sexed semen was used. Use of sexed

Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

Energy Technology Data Exchange (ETDEWEB)

Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

1986-02-15

Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

Bureau of Radiological Health publications index

International Nuclear Information System (INIS)

1979-08-01

The Key Word in Context (KWIC) index to the publications of the Bureau of Radiological Health was prepared to aid in the retrieval and identification of publications originated or authored by Bureau staff or published by the Bureau. These publications include journal articles, government publications and technical reports, selected staff papers, and Bureau news releases issued by HEW. For convenience, the document is divided into four sections, KWIC Index, Author Index, Bibliography Index, and BRH Publications Subject Index

Accuracy of shock index versus ABC score to predict need for massive transfusion in trauma patients.

Science.gov (United States)

Schroll, Rebecca; Swift, David; Tatum, Danielle; Couch, Stuart; Heaney, Jiselle B; Llado-Farrulla, Monica; Zucker, Shana; Gill, Frances; Brown, Griffin; Buffin, Nicholas; Duchesne, Juan

2018-01-01

Various scoring systems have been developed to predict need for massive transfusion in traumatically injured patients. Assessments of Blood Consumption (ABC) score and Shock Index (SI) have been shown to be reliable predictors for Massive Transfusion Protocol (MTP) activation. However, no study has directly compared these two scoring systems to determine which is a better predictor for MTP activation. The primary objective was to determine whether ABC or SI better predicted the need for MTP in adult trauma patients with severe hemorrhage. This was a retrospective cohort study which included all injured patients who were trauma activations between January 1, 2009 and December 31, 2013 at an urban Level I trauma center. Patients ABC and SI were calculated for each patient. MTP was defined as need for >10 units PRBC transfusion within 24h of emergency department arrival. Sensitivity, specificity, and area under the receiver operating characteristic curve (AUROC) were used to evaluate scoring systems' ability to predict effective MTP utilization. A total of 645 patients had complete data for analysis. Shock Index ≥1 had sensitivity of 67.7% (95% CI 49.5%-82.6%) and specificity of 81.3% (95% CI 78.0%-84.3%) for predicting MTP, and ABC score ≥2 had sensitivity of 47.0% (95% CI 29.8%-64.9%) and specificity of 89.8% (95% CI 87.2%-92.1%). AUROC analyses showed SI to be the strongest predictor followed by ABC score with AUROC values of 0.83 and 0.74, respectively. SI had a significantly greater sensitivity (P=0.035), but a significantly weaker specificity (PABC score. ABC score and Shock Index can both be used to predict need for massive transfusion in trauma patients, however SI is more sensitive and requires less technical skill than ABC score. Copyright © 2017 Elsevier Ltd. All rights reserved.

Optical emission from a high-refractive-index waveguide excited by a traveling electron beam

International Nuclear Information System (INIS)

Kuwamura, Yuji; Yamada, Minoru; Okamoto, Ryuichi; Kanai, Takeshi; Fares, Hesham

2008-01-01

An optical emission scheme was demonstrated, in which a high-refractive-index waveguide is excited by a traveling electron beam in a vacuum environment. The waveguide was made of Si-SiO 2 layers. The velocity of light propagating in the waveguide was slowed down to 1/3 of that in free space due to the high refractive index of Si. The light penetrated partly into the vacuum in the form of a surface wave. The electron beam was emitted from an electron gun and propagated along the surface of the waveguide. When the velocity of the electron coincided with that of the light, optical emission was observed. This emission is a type of Cherenkov radiation and is not conventional cathode luminescence from the waveguide materials because Si and SiO 2 are transparent to light at the emitted wavelength. This type of emission was observed in an optical wavelength range from 1.2 to 1.6 μm with an electron acceleration voltage of 32-42 kV. The characteristics of the emitted light, such as the polarization direction and the relation between the acceleration voltage of the electron beam and the optical wavelength, coincided well with the theoretical results. The coherent length of an electron wave in the vacuum was confirmed to be equal to the electron spacing, as found by measuring the spectral profile of the emitted light

Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

2011-03-15

We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Promoting the purchasing of performance tested dorper rams: the ...

African Journals Online (AJOL)

The independent variables (Selection, Weaning Index, Wean direct, Wean maternal, Post wean, Breeding value for number of lambs weaned (GLS), Relative economic value (REV), Selection Index percentage (SI%), Scrotal deviation (SD), Mean Lamb Index (MLI) and Ewe productivity Index (EPI) were used to predict the ...

Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection

Directory of Open Access Journals (Sweden)

P. Pignalosa

2011-09-01

Full Text Available Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm and wide angle (from normal incidence to 60º antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

Opportunity for natural selection among some selected population groups of Northeast India

Science.gov (United States)

Das, Farida Ahmed; Mithun, Sikdar

2010-01-01

BACKGROUND: Selection potential based on differential fertility and mortality has been computed for seven population groups inhabiting different geographical locations of Northeast India. MATERIALS AND METHODS: Crow’s as well as Johnston and Kensinger’s index have been used for the present purpose. RESULTS AND CONCLUSION: Irrespective of the methodology, the total index of selection was found to be highest among the Deoris followed by the Kaibartas. The lowest selection index was found among the Oraon population. If the relative contribution of fertility and mortality components to the total index is considered to be multiplicative, it is observed that in all these communities the fertility component exceeds that of mortality component, which may indicate initiation of demographic transitional phase in the selected populations with the betterment of healthcare and socioeconomic condition within the last few decades. PMID:21031053

Direct evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctions

KAUST Repository

Pintossi, Chiara; Salvinelli, Gabriele; Drera, Giovanni; Pagliara, Stefania; Sangaletti, L.; Del Gobbo, Silvano; Morbidoni, Maurizio; Scarselli, Manuela A.; De Crescenzi, Maurizio; Castrucci, Paola

2013-01-01

An angle resolved X-ray photoemission study of carbon nanotube/silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si-O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiOx/SiO2/Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO2 is related to an increase of the efficiency, acting as a buffer layer, SiOx is detrimental to cell performances, though it can be selectively removed by etching in HF vapors. © 2013 American Chemical Society.

Direct evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctions

KAUST Repository

Pintossi, Chiara

2013-09-12

An angle resolved X-ray photoemission study of carbon nanotube/silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si-O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiOx/SiO2/Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO2 is related to an increase of the efficiency, acting as a buffer layer, SiOx is detrimental to cell performances, though it can be selectively removed by etching in HF vapors. © 2013 American Chemical Society.

Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO{sub 2}–TiO{sub 2} layer

Energy Technology Data Exchange (ETDEWEB)

Lin, Yang-Shih [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Lien, Shui-Yang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Wuu, Dong-Sing, E-mail: dsw@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Huang, Yu-Xuan; Kung, Chung-Yuan [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China)

2014-11-03

In this paper, titanium dioxide (TiO{sub 2}) solution with grain sizes of 1–5 nm is prepared by microwave hydrothermal synthesis, and then mixed with silicon dioxide (SiO{sub 2}) solution to yield different SiO{sub 2}/TiO{sub 2} ratios. The mixed solution is then sol–gel spin-coated on glass as an anti-reflecting and self-cleaning bi-functional layer. The experimental results show that the transmittance is optimized not only by minimizing the reflectance by reflective index matching at the glass/air interface, but also by improving the film/glass interface adhesion. Adding SiO{sub 2} into TiO{sub 2} in a weight ratio of 5 leads to the highest average transmittance of 93.6% which is 3% higher than that of glass. All of the SiO{sub 2}–TiO{sub 2} films exhibit a remarkable inherent hydrophilicity even when not illuminated by ultra-violet light. Using the optimized SiO{sub 2}–TiO{sub 2} film in a hydrogenated amorphous silicon/microcrystalline silicon tandem, solar cell increases its conversion efficiency by 5.2%. Two months of outdoor testing revealed that cells with the SiO{sub 2}–TiO{sub 2} film avoid 1.7% of the degradation loss that is caused by dust and dirt in the environment. - Highlights: • High-transmittance and self-cleaning nano-sized SiO{sub 2}–TiO{sub 2} films are prepared. • Using SiO{sub 2}–TiO{sub 2} film can increase average transmittance from 90.5% (glass) to 93.6%. • The SiO{sub 2}–TiO{sub 2} films have naturally hydrophilicity with water contact angles < 13°. • Cells with the film have a 4.9% higher photocurrent than cells without the film.

Factors influencing the selected body parameters and hippometric indexes in donkey’s population

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Martina Kosťuková

2012-01-01

Full Text Available The main focus of our work was to collect basic body measurements of donkey population in Czech republic and determine the factors that influence these body measurements and hipometric indexes. The following measurements were recorded: height at withers, chest circumference and metacarpus interference. Based on the collected data, we were able to calculate the hipometric indexes: index of boniness, skeleton strength index, body mass index and coup height index. From a total of 331 individuals of donkey species living in Czech republic we managed to collect 50 samples. These were subjected to a general linear model (GLM and multiplex comparison statistical analysis. We managed to prove a statistically significant difference between donkeys born in Czech republic and the ones born abroad for all the measurements. Specifically the metacarpus circumference the gender dependency was also proved, having its impact on the hipometric indexes as well; the boniness index and skeleton strength index were also proved to be gender – dependent.

Sustainability index approach as a selection criteria for energy storage system of an intermittent renewable energy source

International Nuclear Information System (INIS)

Raza, Syed Shabbar; Janajreh, Isam; Ghenai, Chaouki

2014-01-01

Highlights: • Three renewable energy storage options considered: lead acid and lithium polymer batteries and fuel cell. • Hydrogen fuel cell system is the most feasible energy storage option for the long term energy storage. • Sustainability index approach is a novel method used to quantify the qualitative properties of the system. - Abstract: The sustainability index is an adaptive, multicriteria and novel technique that is used to compare different energy storage systems for their sustainability. This innovative concept utilizes both qualitative and quantitative results to measure sustainability through an index based approach. This report aims to compare three different energy storage options for an intermittent renewable energy source. The three energy storage options are lead acid batteries, lithium polymer batteries and fuel cell systems, that are selected due to their availability and the geographical constrain of using other energy storage options. The renewable energy source used is solar photovoltaic (PV). Several technical, economic and environmental factors have been discussed elaborately which would help us to evaluate the merits of the energy storage system for long term storage. Finally, a novel sustainability index has been proposed which quantifies the qualitative and quantitative aspects of the factors discussed, and thus helps us choose the ideal energy storage system for our scenario. A weighted sum approach is used to quantify each factor according to their importance. After a detailed analysis of the three energy storage systems through the sustainability index approach, the most feasible energy storage option was found to be fuel cell systems which can provide a long term energy storage option and also environmental friendly

Development of Advanced Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites: Path Toward 2700 F Temperature Capability and Beyond

Science.gov (United States)

Zhu, Dongming; Harder, Bryan; Hurst, Janet B.; Good, Brian; Costa, Gustavo; Bhatt, Ramakrishna T.; Fox, Dennis S.

2017-01-01

Advanced environmental barrier coating systems for SiC-SiC Ceramic Matrix Composite (CMC) turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant coating development challenges is to achieve prime-reliant environmental barrier coating systems to meet the future 2700F EBC-CMC temperature stability and environmental durability requirements. This presentation will emphasize recent NASA environmental barrier coating system testing and down-selects, particularly the development path and properties towards 2700-3000F durability goals by using NASA hafnium-hafnia-rare earth-silicon-silicate composition EBC systems for the SiC-SiC CMC turbine component applications. Advanced hafnium-based compositions for enabling next generation EBC and CMCs capabilities towards ultra-high temperature ceramic coating systems will also be briefly mentioned.

Novel synthesis of covalently linked silicon quantum dot–polystyrene hybrid materials: Silicon quantum dot–polystyrene polymers of tunable refractive index

Energy Technology Data Exchange (ETDEWEB)

Choi, Jin-Kyu; Dung, Mai Xuan; Jeong, Hyun-Dam, E-mail: hdjeong@chonnam.ac.kr

2014-11-14

We present a new material design concept, silicon quantum dot (Si QD) polymers, for which surface-functionalized Si QDs can be regarded as a large monomer in the polymers. As a prototypical example, vinyl-functionalized Si QDs, i.e., divinylbenzene-capped Si QDs (DVB-Si QDs) synthesized by adopting divinylbenzene (DVB) capping molecule to the hydride-terminated Si QD (H-Si QD) via Pt-catalyzed hydrosilylation was introduced and polymerized with a styrene monomer to yield Si QD–polystyrene (Si QD–PS) polymers. To demonstrate controllability of the content of Si QDs in the polymers as in conventional polymers, three Si QD content varied Si QD–PS polymers were systematically prepared, named as Si QD–PS-A, Si QD–PS-B, and Si QD–PS-C. It has been demonstrated that the content of the Si QDs in the Si QD–PS polymers was well controlled by the amount of the DVB-Si QD used, as found to be 3.8 wt% (Si QD–PS-A), 10.0 wt% (Si QD–PS-B), 20.0 wt% (Si QD–PS-A), and 37.4 wt% (DVB-Si QD), which was deduced from TGA results. Thin films of the Si QD–PS polymers and the freestanding DVB-Si QDs were successfully fabricated by a spin-coating method and it was found that the refractive index of the thin films dried at 40 °C was linearly increased as the content of the Si QD in the polymers was increased from 1.586 (0 wt%), to 1.590 (3.8 wt%), to 1.592 (10.0 wt%), to 1.592 (20.0 wt%), and to 1.614 (37.4 wt%). - Highlights: • A new material design concept, Si QD polymer, is presented. • Freestanding vinyl-functionalized Si QD was synthesized as a monomer for polymer. • Si QD–PS polymers were synthesized by polymerization of styrene with vinyl-Si QD. • Concentration of Si QD in the polymer was well controlled by amount of Si QD used. • Refractive index of polymer thin films linearly increased with concentration of Si QD.

Novel synthesis of covalently linked silicon quantum dot–polystyrene hybrid materials: Silicon quantum dot–polystyrene polymers of tunable refractive index

International Nuclear Information System (INIS)

Choi, Jin-Kyu; Dung, Mai Xuan; Jeong, Hyun-Dam

2014-01-01

We present a new material design concept, silicon quantum dot (Si QD) polymers, for which surface-functionalized Si QDs can be regarded as a large monomer in the polymers. As a prototypical example, vinyl-functionalized Si QDs, i.e., divinylbenzene-capped Si QDs (DVB-Si QDs) synthesized by adopting divinylbenzene (DVB) capping molecule to the hydride-terminated Si QD (H-Si QD) via Pt-catalyzed hydrosilylation was introduced and polymerized with a styrene monomer to yield Si QD–polystyrene (Si QD–PS) polymers. To demonstrate controllability of the content of Si QDs in the polymers as in conventional polymers, three Si QD content varied Si QD–PS polymers were systematically prepared, named as Si QD–PS-A, Si QD–PS-B, and Si QD–PS-C. It has been demonstrated that the content of the Si QDs in the Si QD–PS polymers was well controlled by the amount of the DVB-Si QD used, as found to be 3.8 wt% (Si QD–PS-A), 10.0 wt% (Si QD–PS-B), 20.0 wt% (Si QD–PS-A), and 37.4 wt% (DVB-Si QD), which was deduced from TGA results. Thin films of the Si QD–PS polymers and the freestanding DVB-Si QDs were successfully fabricated by a spin-coating method and it was found that the refractive index of the thin films dried at 40 °C was linearly increased as the content of the Si QD in the polymers was increased from 1.586 (0 wt%), to 1.590 (3.8 wt%), to 1.592 (10.0 wt%), to 1.592 (20.0 wt%), and to 1.614 (37.4 wt%). - Highlights: • A new material design concept, Si QD polymer, is presented. • Freestanding vinyl-functionalized Si QD was synthesized as a monomer for polymer. • Si QD–PS polymers were synthesized by polymerization of styrene with vinyl-Si QD. • Concentration of Si QD in the polymer was well controlled by amount of Si QD used. • Refractive index of polymer thin films linearly increased with concentration of Si QD

Strained Si/SiGe MOS transistor model

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Tatjana Pešić-Brđanin

2009-06-01

Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

U-Mo/Al-Si interaction: Influence of Si concentration

International Nuclear Information System (INIS)

Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

2010-01-01

Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

SiC Composite for Fuel Structure Applications

Energy Technology Data Exchange (ETDEWEB)

Yueh, Ken [Electric Power Research Inst. (EPRI), Charlotte, NC (United States)

2017-12-22

Extensive evaluation was performed to determine the suitability of using SiC composite as a boiling water reactor (BWR) fuel channel material. A thin walled SiC composite box, 10 cm in dimension by approximately 1.5 mm wall thickness was fabricated using chemical vapor deposition (CVD) for testing. Mechanical test results and performance evaluations indicate the material could meet BWR channel mechanical design requirement. However, large mass loss of up to 21% was measured in in-pile corrosion test under BWR-like conditions in under 3 months of irradiation. A fresh sister sample irradiated in a follow-up cycle under PWR conditions showed no measureable weight loss and thus supports the hypothesis that the oxidizing condition of the BWR-like coolant chemistry was responsible for the high corrosion rate. A thermodynamic evaluation showed SiC is not stable and the material may oxidize to form SiO₂ and CO₂. Silica has demonstrated stability in high temperature steam environment and form a protective oxide layer under severe accident conditions. However, it does not form a protective layer in water under normal BWR operational conditions due to its high solubility. Corrosion product stabilization by modifying the SiC CVD surface is an approach evaluated in this study to mitigate the high corrosion rate. Titanium and zirconium have been selected as stabilizing elements since both TiSiO₄ and ZrSiO₄ are insoluble in water. Corrosion test results in oxygenated water autoclave indicate TiSiO4 does not form a protective layer. However, zirconium doped test samples appear to form a stable continuous layer of ZrSiO₄ during the corrosion process. Additional process development is needed to produce a good ZrSiC coating to verify functionality of the mitigation concept.

Dimensional Accuracy and Surface Roughness Analysis for AlSi10Mg Produced by Selective Laser Melting (SLM

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Kamarudin K.

2016-01-01

Full Text Available Selective Laser Melting (SLM is an Additive Manufacturing (AM technique that built 3D part in a layer-by-layer method by melting the top surface layer of a powder bed with a high intensity laser according to sliced 3D CAD data. AlSi10Mg alloy is a traditional cast alloy that is broadly used for die-casting process and used in automotive industry due its good mechanical properties. This paper seeks to investigate the requirement SLM in rapid tooling application. The feasibility study is done by examining the surface roughness and dimensional accuracy as compared to the benchmark part produced through the SLM process with constant parameters. The benchmark produced by SLM shows the potential of SLM in a manufacturing application particularly in moulds.

Porous SiC/SiC composites development for industrial application

International Nuclear Information System (INIS)

Maeta, S.; Hinoki, T.

2014-01-01

Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

Exploring QSAR with E-state index: selectivity requirements for COX-2 versus COX-1 binding of terphenyl methyl sulfones and sulfonamides.

Science.gov (United States)

Chakraborty, Santanu; Sengupta, Chandana; Roy, Kunal

2004-09-20

An attempt has been made to explore selectivity requirements for cyclooxygenase-2 (COX-2) versus cyclooxygenase-1 (COX-1) binding of terphenyl methyl sulfones and sulfonamides using electrotopological state (E-state) index and suitable indicator parameters. Multiple linear regression analyses produced statistically acceptable equations: the best relation based on 'all-possible-subsets regression' for COX-1 binding (n=18) showed predicted variance and explained variance of 0.675 and 0.777, respectively, while in case of the best equation for COX-2 binding (n=38), these values rose to 0.842 and 0.874, respectively. For the selectivity relation (n=17), predicted variance and explained variance values were 0.601 and 0.687, respectively. Based on the results of the analyses, three important sites have been suggested: sites A (methylsulfonyl or aminosulfonyl moiety), B (central phenyl ring), and C (terminal phenyl ring containing different substituents). All three sites are important for COX-2 binding while sites B and C are important for COX-1 binding. For COX-2 selectivity, only site C plays an important role. The study shows the utility of E-state index in developing statistically acceptable model having direct physicochemical significance.

On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Kozlowski, Grzegorz

2012-04-24

Selective chemical vapor deposition Ge heteroepitaxy approaches for high quality Ge nanostructure growth with reasonable thermal budget must be developed for local Ge photonic module integration. A promising vision is offered by the compliant substrate effects within nanometer scale Ge/Si heteroepitaxial structures. Here, in contrast to the classical Ge deposition on bulk Si substrates, the thermal and lattice mismatch strain energy accumulated in the Ge epilayer is partially shifted to the free-standing Si nanostructure. This strain partitioning phenomenon is at the very heart of the nanoheteroepitaxy theory (NHE) and, if strain energy levels are correctly balanced, offers the vision to grow defect-free nanostructures of lattice mismatched semiconductors on Si. In case of the Ge/Si heterosystem with a lattice mismatch of 4.2%, the strain partitioning phenomenon is expected to be triggered when free-standing Si nanopillars with the width of 50 nm and below are used. In order to experimentally verify NHE with its compliant substrate effects, a set of free-standing Ge/Si nanostructures with diameter ranging from 150 to 50 nm were fabricated and investigated. The main limitation corresponds to a simultaneous detection of (a) the strain partitioning phenomenon between Ge and Si and (b) the absence of defects on the nano-scale. In this respect, synchrotron-based grazing incidence X-ray diffraction was applied to study the epitaxial relationship, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. Raman spectroscopy supported by finite element method calculations were used to investigate the strain distribution within a single Ge/Si nanostructure. Special focus was devoted to transmission electron microscopy to determine the quality of the Ge epilayer. It was found, that although high quality Ge nanoclusters can be achieved by thermal annealing on Si pillars bigger than 50 nm in width, no proof of strain partitioning

Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

Energy Technology Data Exchange (ETDEWEB)

Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

2005-08-01

SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

Science.gov (United States)

Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

2018-04-01

The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

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Jiongjiong Mo

2017-01-01

Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

Varying levels of difficulty index of skills-test items randomly selected by examinees on the Korean emergency medical technician licensing examination.

Science.gov (United States)

Koh, Bongyeun; Hong, Sunggi; Kim, Soon-Sim; Hyun, Jin-Sook; Baek, Milye; Moon, Jundong; Kwon, Hayran; Kim, Gyoungyong; Min, Seonggi; Kang, Gu-Hyun

2016-01-01

The goal of this study was to characterize the difficulty index of the items in the skills test components of the class I and II Korean emergency medical technician licensing examination (KEMTLE), which requires examinees to select items randomly. The results of 1,309 class I KEMTLE examinations and 1,801 class II KEMTLE examinations in 2013 were subjected to analysis. Items from the basic and advanced skills test sections of the KEMTLE were compared to determine whether some were significantly more difficult than others. In the class I KEMTLE, all 4 of the items on the basic skills test showed significant variation in difficulty index (P<0.01), as well as 4 of the 5 items on the advanced skills test (P<0.05). In the class II KEMTLE, 4 of the 5 items on the basic skills test showed significantly different difficulty index (P<0.01), as well as all 3 of the advanced skills test items (P<0.01). In the skills test components of the class I and II KEMTLE, the procedure in which examinees randomly select questions should be revised to require examinees to respond to a set of fixed items in order to improve the reliability of the national licensing examination.

Varying levels of difficulty index of skills-test items randomly selected by examinees on the Korean emergency medical technician licensing examination

Directory of Open Access Journals (Sweden)

Bongyeun Koh

2016-01-01

Full Text Available Purpose: The goal of this study was to characterize the difficulty index of the items in the skills test components of the class I and II Korean emergency medical technician licensing examination (KEMTLE, which requires examinees to select items randomly. Methods: The results of 1,309 class I KEMTLE examinations and 1,801 class II KEMTLE examinations in 2013 were subjected to analysis. Items from the basic and advanced skills test sections of the KEMTLE were compared to determine whether some were significantly more difficult than others. Results: In the class I KEMTLE, all 4 of the items on the basic skills test showed significant variation in difficulty index (P<0.01, as well as 4 of the 5 items on the advanced skills test (P<0.05. In the class II KEMTLE, 4 of the 5 items on the basic skills test showed significantly different difficulty index (P<0.01, as well as all 3 of the advanced skills test items (P<0.01. Conclusion: In the skills test components of the class I and II KEMTLE, the procedure in which examinees randomly select questions should be revised to require examinees to respond to a set of fixed items in order to improve the reliability of the national licensing examination.

Site selective, time and temperature dependent spectroscopy of Eu{sup 3+} doped apatites (Mg,Ca,Sr){sub 2}Y{sub 8}Si{sub 6}O{sub 26}

Energy Technology Data Exchange (ETDEWEB)

Jansen, T., E-mail: t.jansen@fh-muenster.de [Münster University of Applied Sciences, Stegerwaldstrasse 39, 48565 Steinfurt (Germany); Jüstel, T. [Münster University of Applied Sciences, Stegerwaldstrasse 39, 48565 Steinfurt (Germany); Kirm, M.; Mägi, H.; Nagirnyi, V.; Tõldsepp, E.; Vielhauer, S. [Institute of Physics, University of Tartu, W. Ostwald Str. 1, 50411 Tartu (Estonia); Khaidukov, N.M. [N. S. Kurnakov Institute of General and Inorganic Chemistry, 31 Leninskiy Prospekt, 119991 Moscow (Russian Federation); Makhov, V.N. [P.N. Lebedev Physical Institute, 53 Leninskiy Prospekt, 119991 Moscow (Russian Federation)

2017-06-15

This work concerns the optical properties of alkaline earth yttrium apatites according to the composition AE{sub 2}Y{sub 8}Si{sub 6}O{sub 26} (AE=Mg, Ca, Sr) doped with Eu{sup 3+}, which are materials of interest for LED applications. Using a multistep preparation route, which includes hydrothermal synthesis of precursors for solid state reaction, ceramic samples were prepared and their structural and optical properties characterised. More particularly, this work relates to site-selective spectroscopy, since the compounds comprise two distinguishable crystallographic sites within the host structure, where Eu{sup 3+} can be substituted. It also describes the temperature dependent photoluminescence, which thermal quenching temperature (T{sub 1/2}) for Sr{sub 2}Y{sub 8}Si{sub 6}O{sub 26}:Eu{sup 3+} and Ca{sub 2}Y{sub 8}Si{sub 6}O{sub 26}:Eu{sup 3+} is in the range of 561 K and 591 K respectively, whereas Mg{sub 2}Y{sub 8}Si{sub 6}O{sub 26}:Eu{sup 3+} shows bi-sigmoidal quenching behaviour in the range between 210 and 452 K.

Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate

Science.gov (United States)

Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

2017-07-01

In this paper we study the effect of H2/SiH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline silicon embedded in amorphous matrix thin films. The thin films are prepared using standard RF-PECVD process at substrate temperature of 200 °C. The effect of hydrogen dilution ratio on the optical index of refraction and the absorption coefficient were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with low SiH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow of μc-Si:H samples, ∼8% and 12% reduction in the index of refraction at 400 nm and at 1500 nm can be achieved, respectively. In addition a 78% reduction in surface roughness is obtained when 60sccm of H2 is used in the deposition compared to the sample without any H2 incorporation.

Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

Science.gov (United States)

Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

2013-09-01

We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO2/Si Multilayer Structure

Directory of Open Access Journals (Sweden)

Muhammad Zubair Aslam

2018-05-01

Full Text Available A Finite Element Method (FEM simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO2/Si Surface Acoustic Wave (SAW sensor to low concentrations of Volatile Organic Compounds (VOCs, that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS compatible AlN/SiO2/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO2 layers’ thicknesses over phase velocities and electromechanical coupling coefficients (k2 of two SAW modes (i.e., Rayleigh and Sezawa is analyzed and the optimal thicknesses of AlN and SiO2 layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

Science.gov (United States)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

Microfluidic Synthesis of Highly Potent Limit-size Lipid Nanoparticles for In Vivo Delivery of siRNA

Directory of Open Access Journals (Sweden)

Nathan M Belliveau

2012-01-01

Full Text Available Lipid nanoparticles (LNP are the leading systems for in vivo delivery of small interfering RNA (siRNA for therapeutic applications. Formulation of LNP siRNA systems requires rapid mixing of solutions containing cationic lipid with solutions containing siRNA. Current formulation procedures employ macroscopic mixing processes to produce systems 70-nm diameter or larger that have variable siRNA encapsulation efficiency, homogeneity, and reproducibility. Here, we show that microfluidic mixing techniques, which permit millisecond mixing at the nanoliter scale, can reproducibly generate limit size LNP siRNA systems 20 nm and larger with essentially complete encapsulation of siRNA over a wide range of conditions with polydispersity indexes as low as 0.02. Optimized LNP siRNA systems produced by microfluidic mixing achieved 50% target gene silencing in hepatocytes at a dose level of 10 µg/kg siRNA in mice. We anticipate that microfluidic mixing, a precisely controlled and readily scalable technique, will become the preferred method for formulation of LNP siRNA delivery systems.

Interfacial characterization of CVI-SiC/SiC composites

International Nuclear Information System (INIS)

Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

2002-01-01

The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

Directory of Open Access Journals (Sweden)

Song Feng

2018-01-01

Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

Modification of the refractive index and the dielectric constant of silicon dioxide by means of ion implantation

International Nuclear Information System (INIS)

Swart, J.W.; Diniz, J.A.; Doi, I.; Moraes, M.A.B. de

2000-01-01

The modification of silicon dioxide films by means of ion implantation of fluorine and carbon was studied. 19 F + and 12 C + ions were separately and sequentially implanted in 250 nm thick thermal SiO 2 films with energies ranging from 10 to 50 keV and fluences in the interval 5x10 15 to 5x10 16 cm -2 . Metal/oxide/semiconductor (MOS) capacitors were fabricated on half side of the wafers. The implanted SiO 2 /Si samples were characterized by means of ellipsometry and Fourier transform infrared (FTIR) spectroscopy. The MOS capacitors were used to determine the relative dielectric constant. Our results indicate a considerable reduction of the dielectric constant and refractive index. The refractive index was reduced from 1.46 to 1.29 when only fluorine was implanted or when fluorine with a higher dose was implanted in combination with carbon. For the same conditions, a relative dielectric constant of 3.4 was obtained and a shift in the Si-O bond stretching mode from 1085 to 1075 cm -1 was observed by FTIR spectroscopy

Browse Title Index

African Journals Online (AJOL)

Items 101 - 150 of 414 ... Journal Home > Advanced Search > Browse Title Index. Log in or ... of an algebraic function for the permutation of truth table columns, Abstract ... appraisal and productivity levels in selected Nigerian universities, Abstract.

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI

Directory of Open Access Journals (Sweden)

John E. Cunningham

2012-04-01

Full Text Available We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical p-i-n diodes exhibit very low dark current density of 5 mA/cm² at −1 V bias. Under a 7.5 V/µm E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective ∆α/α around 3.5 at 1,590 nm. We compared measured ∆α/α performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics.

Low dose irradiation performance of SiC interphase SiC/SiC composites

International Nuclear Information System (INIS)

Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

1998-01-01

Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

Event Index - a LHCb Event Search System

CERN Document Server

INSPIRE-00392208; Kazeev, Nikita; Redkin, Artem

2015-12-23

LHC experiments generate up to $10^{12}$ events per year. This paper describes Event Index - an event search system. Event Index's primary function is quickly selecting subsets of events from a combination of conditions, such as the estimated decay channel or stripping lines output. Event Index is essentially Apache Lucene optimized for read-only indexes distributed over independent shards on independent nodes.

Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

DEFF Research Database (Denmark)

Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

2014-01-01

Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

Supplement: Commodity Index Report

Data.gov (United States)

Commodity Futures Trading Commission — Shows index traders in selected agricultural markets. These traders are drawn from the noncommercial and commercial categories. The noncommercial category includes...

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

Science.gov (United States)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

2016-08-15

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Sequential Condensation and Hydrodeoxygenation Reaction of Furfural-Acetone Adduct over Mix Catalysts Ni/SiO2 and Cu/SiO2 in Water

Directory of Open Access Journals (Sweden)

Siti Mariyah Ulfa

2018-05-01

Full Text Available Sequential condensation and hydrodeoxygenation reaction were perform using autoclave batch reactor in the presence of water as a solvent. The condensation of furfural and acetone was performed using MgO catalyst followed by hydrodeoxygenation using mix catalyst Ni/SiO2 and Cu/SiO2. The catalyst was prepared by wet-impregnation method and analyzed by XRD, SEM-EDX as well as BET surface. Condensation of furfural and acetone in 1:2 mol ratio was carried out by reflux gave 4-(2-furyl-3-buten-2-one and 1,5-bis-(2-furanyl-1,4-pentadien-3-one. The condensation product was then subjected for hydrodeoxygenation using batch reactor, catalyzed by mixed Ni/SiO2 and Cu/SiO2 at 150 and 180 °C for 2 h. The product identified as alkane derivatives with the conversion at 38.83 and 50.35%, respectively. The selectivity of hydrocarbon is 61.39% at 150 °C and 16.55% at 180 °C. Increasing the reaction temperature to 200 °C did not give any products except the recovery of the precursor. It showed that higher temperature enhanced the catalyst activity but the selectivity is controlled by low reaction temperature.

Ion assisted deposition of SiO2 film from silicon

Science.gov (United States)

Pham, Tuan. H.; Dang, Cu. X.

2005-09-01

Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

Measurement of intra-industry trade (ITT) of Iran with ten selective major trading partners using Grubel-Lloyd Index

OpenAIRE

Muhammad Emadi

2016-01-01

This paper was conducted to measure intra-industry trade of Iran with ten selective major trading partners including the United Arab Emirates, Germany, China, Republic of Korea, Italy, India, Japan, Turkey, Spain, and Singapore using Grubel-Lloyd index. Due to the development of cross-border economic relationships, these countries try to find and present an appropriate model for production, import, and export of goods and identification of business opportunities and comparative advantages. Th...

[Experience, prevalence, severity, treatment needs for dental caries and care index in Mexican adolescents and young adults].

Science.gov (United States)

García-Cortés, José Obed; Mejia-Cruz, Jorge Adrián; Medina-Cerda, Eduardo; Orozco-De la Torre, Guillermo; Medina-Solís, Carlo Carlo; Márquez-Rodríguez, Sonia; Navarrete-Hernández, José de Jesús; Islas-Granillo, Horacio

2014-01-01

To determine the experience, prevalence and severity of dental caries as well as to establish the treatment needs and restorative care in adolescents and young adults. This cross-sectional study included 638 subjects 16-25 years old candidates to enter to state public university of San Luis Potosí, México. For caries detection was used the DMFT index (sum of decayed teeth + missing teeth + filled teeth in the permanent dentition). With DMFT index data were calculated the experience, the prevalence and the severity of caries. Also are reported the significant caries index (SiC), the treatment needs index (TNI) and the care index (CI). Statistical analysis was performed using nonparametric tests. The mean DMFT index was 4.24 ± 3.85, prevalence 76.5% and severity of 52.3% for DMFT > 3 and 26.2% for DMFT > 6. The SiC index was 8.7. The TNI was 43.0% and 52.8% CI. No variation was observed (p > 0.05) on the experience, prevalence and severity of caries by age. The component "filled teeth" showed differences by age (p caries experience and severity than men (p dental caries in this sample of adolescents and young adults. We found almost 40% of untreated caries lesions. We found some differences by sex.

Irradiation effect on Nite-SiC/SiC composites

International Nuclear Information System (INIS)

Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

2007-01-01

Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

Reduced sintering of mass-selected Au clusters on SiO2 by alloying with Ti: an aberration-corrected STEM and computational study

DEFF Research Database (Denmark)

Niu, Yubiao; Schlexer, Philomena; Sebök, Béla

2018-01-01

Au nanoparticles represent the most remarkable example of a size effect in heterogeneous catalysis. However, a major issue hindering the use of Au nanoparticles in technological applications is their rapid sintering. We explore the potential of stabilizing Au nanoclusters on SiO2 by alloying them...... in the Au/Ti clusters, but in line with the model computational investigation, Au atoms were still present on the surface. Thus size-selected, deposited nanoalloy Au/Ti clusters appear to be promising candidates for sustainable gold-based nanocatalysis....

T2-weighted signal intensity-selected volumetry for prediction of pathological complete response after preoperative chemoradiotherapy in locally advanced rectal cancer.

Science.gov (United States)

Kim, Sungwon; Han, Kyunghwa; Seo, Nieun; Kim, Hye Jin; Kim, Myeong-Jin; Koom, Woong Sub; Ahn, Joong Bae; Lim, Joon Seok

2018-06-01

To evaluate the diagnostic value of signal intensity (SI)-selected volumetry findings in T2-weighted magnetic resonance imaging (MRI) as a potential biomarker for predicting pathological complete response (pCR) to preoperative chemoradiotherapy (CRT) in patients with rectal cancer. Forty consecutive patients with pCR after preoperative CRT were compared with 80 age- and sex-matched non-pCR patients in a case-control study. SI-selected tumor volume was measured on post-CRT T2-weighted MRI, which included voxels of the treated tumor exceeding the SI (obturator internus muscle SI + [ischiorectal fossa fat SI - obturator internus muscle SI] × 0.2). Three blinded readers independently rated five-point pCR confidence scores and compared the diagnostic outcome with SI-selected volumetry findings. The SI-selected volumetry protocol was validated in 30 additional rectal cancer patients. The area under the receiver-operating characteristic curve (AUC) of SI-selected volumetry for pCR prediction was 0.831, with an optimal cutoff value of 649.6 mm 3 (sensitivity 0.850, specificity 0.725). The AUC of the SI-selected tumor volume was significantly greater than the pooled AUC of readers (0.707, p volumetry in post-CRT T2-weighted MRI can help predict pCR after preoperative CRT in patients with rectal cancer. • Fibrosis and viable tumor MRI signal intensities (SIs) are difficult to distinguish. • T2 SI-selected volumetry yields high diagnostic performance for assessing pathological complete response. • T2 SI-selected volumetry is significantly more accurate than readers and non-SI-selected volumetry. • Post-chemoradiation therapy T2-weighted MRI SI-selected volumetry facilitates prediction of pathological complete response.

Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

Science.gov (United States)

Zhu, Dongming

2016-01-01

Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

Stability analysis of SiO2/SiC multilayer coatings

International Nuclear Information System (INIS)

Fu Zhiqiang; Jean-Charles, R.

2006-01-01

The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

International Nuclear Information System (INIS)

Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

2000-01-01

The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

International Nuclear Information System (INIS)

Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bravo, D.; Lopez, F. J.; Bohne, W.; Roehrich, J.; Selle, B.; Martinez, F. L.

2003-01-01

SiO x N y H z films were deposited from O 2 , N 2 , and SiH 4 gas mixtures at room temperature using the electron cyclotron resonance plasma method. The absolute concentrations of all the species present in the films (Si, O, N, and H) were measured with high precision by heavy-ion elastic recoil detection analysis. The composition of the films was controlled over the whole composition range by adjusting the precursor gases flow ratio during deposition. The relative incorporation of O and N is determined by the ratio Q=φ(O 2 )/φ(SiH 4 ) and the relative content of Si is determined by R=[φ(O 2 )+φ(N 2 )]/φ(SiH 4 ) where φ(SiH 4 ), φ(O 2 ), and φ(N 2 ) are the SiH 4 , O 2 , and N 2 gas flows, respectively. The optical properties (infrared absorption and refractive index) and the density of paramagnetic defects were analyzed in dependence on the film composition. Single-phase homogeneous films were obtained at low SiH 4 partial pressure during deposition; while those samples deposited at high SiH 4 partial pressure show evidence of separation of two phases. The refractive index was controlled over the whole range between silicon nitride and silicon oxide, with values slightly lower than in stoichiometric films due to the incorporation of H, which results in a lower density of the films. The most important paramagnetic defects detected in the films were the K center and the E ' center. Defects related to N were also detected in some samples. The total density of defects in SiO x N y H z films was higher than in SiO 2 and lower than in silicon nitride films

Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

International Nuclear Information System (INIS)

Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

2007-01-01

Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

Directory of Open Access Journals (Sweden)

Jhansirani KOTCHARLAKOTA

2016-05-01

Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245

Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

Energy Technology Data Exchange (ETDEWEB)

Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

2014-02-28

We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

Thermal shock properties of 2D-SiCf/SiC composites

International Nuclear Information System (INIS)

Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

2012-01-01

This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.