Large-scale synthesis and growth habit of 3-D flower-like crystal of PbTe

Science.gov (United States)

Zhou, Nan; Chen, Gang; Yang, Xi; Zhang, Xiaosong

2012-02-01

In this paper, 3-D flower-like crystal of PbTe was successfully synthesized using Pb(CH3COO)2·3H2O and Na2TeO3 as precursors under hydrothermal conditions, and characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction pattern (XRD). The reaction parameters that influenced the evolution of PbTe synthesis and morphology were investigated. It was shown that the flower-like crystal of PbTe was composed of a nucleus with eight pods. A possible growth mechanism was proposed based on the calculation of the surface energies of PbTe and the SEM observation. Furthermore, the temperature-dependent transport properties of 3-D flower-like crystal of PbTe specimen have been evaluated with an average thermoelectric power of 120 S cm-1 and electrical conductivity of 220 μV K-1 at 740 K.

The geological and microbiological controls on the enrichment of Se and Te in sedimentary rocks

Science.gov (United States)

Bullock, Liam; Parnell, John; Armstrong, Joseph; Boyce, Adrian; Perez, Magali

2017-04-01

Selenium (Se) and tellurium (Te) have become elements of high interest, mainly due to their photovoltaic and photoconductive properties, and can contaminate local soils and groundwater systems during mobilisation. Due to their economic and environmental significance, it is important to understand the processes that lead to Se- and Te-enrichment in sediments. The distribution of Se and Te in sedimentary environments is primarily a function of redox conditions, and may be transported and concentrated by the movement of reduced fluids through oxidised strata. Se and Te concentrations have been measured in a suite of late Neoproterozoic Gwna Group black shales (UK) and uranium red bed (roll-front) samples (USA). Due to the chemical affinity of Se and sulphur (S), variations in the S isotopic composition of pyrite have also been measured in order to provide insights into their origin. Scanning electron microscopy of pyrite in the black shales shows abundant inclusions of the lead selenide mineral clausthalite. The data for the black shale samples show marked enrichment in Te and Se relative to crustal mean and several hundreds of other samples processed through our laboratory. While Se levels in sulphidic black shales are typically below 5 ppm, the measured values of up to 116 ppm are remarkable. The Se enrichment in roll-fronts (up to 168 ppm) is restricted to a narrow band of alteration at the interface between the barren oxidised core, and the highly mineralised reduced nose of the front. Te is depleted in roll-fronts with respect to the continental crust and other geological settings and deposits. S isotope compositions for pyrite in both the black shales and roll-fronts are very light and indicate precipitation by microbial sulphate reduction, suggesting that Se was microbially sequestered. Results show that Gwna Group black shales and U.S roll-front deposits contain marked elemental enrichments (particularly Se content). In Gwna Group black shales, Se and Te were

Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

Science.gov (United States)

Shrestha, K.; Graf, D.; Marinova, V.; Lorenz, B.; Chu, C. W.

2017-10-01

We have investigated the weak antilocalization (WAL) effect in the p-type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

Phase equilibria in TlX-Cd(Zn)X (X-S, Se, Te) systems

International Nuclear Information System (INIS)

Gusejnov, F.Kh.; Babanly, M.B.; Kuliev, A.A.

1982-01-01

The methods of DTA, RPA and measurement of the alloys microhardness have been used to investigate the phase equilibria in the TlX-Zn(Cd)X systems. It is established that the TlZn(Cd)X 2 compounds, the presence of which is mentioned in the literature earlier, do not form in these systems. The TlSe-Zn(Cd)Se systems apply to the simple eutectic type and characterized by digenerated eutectic near the TlSe. Thermodynamical analysis of the liquidus of the TlSe-CdSe and TlTe-Zn(Cd)Te systems in approximation of the regular solutions, taking into account the dissociation of tallium chalcogenides in liquid phase, is made

Cs7Sm11[TeO3]12Cl16 and Rb7Nd11[TeO3]12Br16, the new tellurite halides of the tetragonal Rb6LiNd11[SeO3]12Cl16 structure type

Science.gov (United States)

Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.; Sklovsky, Dmitry E.; Berdonosov, Peter S.; Olenev, Andrei V.; Zhou, Wuzong; Lightfoot, Philip; Dolgikh, Valery A.

2015-12-01

Two new rare-earth - alkali - tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs7Sm11[TeO3]12Cl16 (I) and Rb7Nd11[TeO3]12Br16 (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn11(TeO3)12] and [M6X16] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted.

Covalency effects of Te substitution on the antiferromagnetic stability of Cr3Se4-yTey

International Nuclear Information System (INIS)

Ohta, S.; Adachi, Y.

1996-01-01

Measurements of the magnetic susceptibility χ as a function of temperature T for Te-substituted Cr 3 Se 4-y Te y (0≤y≤1) with the NiAs-like crystal structure (space group I2/m) have been carried out. As y increases, the Neel temperature T N shifts to the lower temperature side. The magnetic transition temperature T A , where a sharp peak is observed in χ versus T plots, decreases with increasing y, in a similar fashion to the concentration dependence of T N . The effective number of Bohr magnetons per Cr takes an intermediate value which is expected in Cr 2+ and Cr 3+ states. Characteristic features of a spin-glass-like phase are observed in the sample with y=1. The results obtained are discussed qualitatively from the viewpoint of antiferromagnetic stability through d-p covalent mixing between Cr 3d and chalcogen p orbitals. (orig.)

Electric properties of semi-insulating crystals CdTe:Cl

International Nuclear Information System (INIS)

Arkadyeva, E.N.; Matveev, O.A.

1977-01-01

Hall effect and conductivity measurement were carried out on chlorine doped semi-insulating CdTe crystals, of p and n electric type. In p type crystals the depth of the dominating level was determined (+0.7eV) as well as the concentration of associated centres (10 13 -10 14 cm -3 ). The mobility values are limited by a process of diffusion on heterogeneities

The determination of the surface potential for the CdxHg1-xTe crystals and the V-CdxHg1-xTe and Ni-V-CdxMg1-xTe structures

International Nuclear Information System (INIS)

Veliyulin, Eh.I.; Ragimova, R.A.; Mamedov, A.A.

1996-01-01

Surface potential of semiconductor crystals n-Cd x Hg 1-x Te (unannealed and annealed in mercury vapors) and of the structures V-Cd x Hg 1-x Te, Ni-V-Cd x Hg 1-x Te has been defined using spectroscopy of weak-field electric reflection. It is shown that a deep penetration of vanadium atoms in near the surface region of the crystal occurs in the structures on the basis of unannealed Cd x Hg 1-x Te. 1 ref.; 4 figs

Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation

Directory of Open Access Journals (Sweden)

A Harsono Soepardjo

2010-10-01

Full Text Available Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 - 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were obtained using X-Ray Diffraction (XRD spectroscopy. The XRD results show that the quarternair CuGaSeTe and CuGa0.5In 0.5Te2 films have a chalcopyrite structure. The absorption coefficient and the  band gap energy of the films were calculated using transmittance and reflectance patterns that measured using UV-VIS Difractometer. The films composition can be detected by using the Energy Dispersive Spectroscopy (EDS, while the films resistivity, mobility and the majority carrier of the films were obtained from Hall Effect experiments.

Optical properties change in Te diffused As{sub 50}Se{sub 50} chalcogenide thin film

Energy Technology Data Exchange (ETDEWEB)

Naik, Ramakanta; Behera, M.; Panda, R.; Mishra, N. C. [Department of Physics, Utkal University, Bhubaneswar, 751004, Odisha (India)

2016-05-23

In the present report, we present the effect of Te diffusion into As{sub 50}Se{sub 50} thin film which changes the optical properties. The Te/As{sub 50}Se{sub 50} film was irradiated by a laser beam of 532 nm to study the diffusion mechanism due to photo induced effect. The As{sub 50}Se{sub 50}, Te/As{sub 50}Se{sub 50} films show a completely amorphous nature from X-ray diffraction study. A non direct transition was found for these films on the basis of optical transmission data carried out by Fourier Transform infrared Spectroscopy. The optical bandgap is found to be decreased with Te deposition and photo darkening phenomena is observed for the diffused film. The change in the optical constants are well supported by the corresponding change in different types of bonds which are being studied by X-ray photoelectron spectroscopy.

Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

Energy Technology Data Exchange (ETDEWEB)

Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

2014-11-05

Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

Optical properties change in laser-induced Te/As{sub 2}Se{sub 3} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Behera, Mukta; Naik, Ramakanta [Utkal University, Department of Physics, Bhubaneswar (India)

2016-10-15

In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As{sub 2}Se{sub 3} film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As{sub 2}Se{sub 3} bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As{sub 2}Se{sub 3} matrix was done by 532-nm laser irradiation. The structure of the As{sub 2}Se{sub 3}, as-prepared and irradiated Te/As{sub 2}Se{sub 3} films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As{sub 2}Se{sub 3} film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices. (orig.)

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM{sub 2}InTe{sub 4} (M=Zn, Cd)

Energy Technology Data Exchange (ETDEWEB)

Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Hassan, M. Shafiq; Dong, Yongkwan [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Martin, Joshua [Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States)

2016-10-15

Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn{sub 2}InSe{sub 4}. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications. - Graphical abstract: The structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications. - Highlights: • The physical properties of CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. • These materials have potential for thermoelectric applications. • Their direct band gaps also suggest potential for photovoltaics applications.

Zn2(TeO3Br2

Directory of Open Access Journals (Sweden)

Mats Johnsson

2008-05-01

Full Text Available Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetrahedra, and [TeO3E] tetrahedra (E being the 5s2 lone pair of Te4+ joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3Br2 is isostructural with the synthetic compounds Zn2(TeO3Cl2, CuZn(TeO32, Co2(TeO3Br2 and the mineral sophiite, Zn2(SeO3Cl2.

Growth and characterization of LiInSe2 single crystals

Science.gov (United States)

Ma, Tianhui; Zhu, Chongqiang; Lei, Zuotao; Yang, Chunhui; Sun, Liang; Zhang, Hongchen

2015-04-01

Large and crack-free LiInSe2 single crystals were obtained by the vertical gradient freezing method with adding a temperature oscillation technology in a two-zone furnace. X-ray diffraction data showed that the pure LiInSe2 compound was synthesized. The grown crystals had different color depending on melt composition. The atomic ratios of elements of LiInSe2 crystals were obtained by an Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES), and the structural formula were calculated according to the relative contents of elements. The average absorption coefficients were estimated by using average reflection indices. The absorption coefficients of the thermal annealing samples are 0.6 cm-1 at 2-3 μm. The transparent range of our LiInSe2 crystals is from 0.6 μm to 13.5 μm.

Optical properties of n-CdSe sub 1-x Te sub x polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, M T [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

1991-01-01

Absorption coefficient, {alpha}({lambda}), and energy gap, E{sub g}, of CdSe{sub 1-x}Te{sub x} thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 450-2500 nm. The thin film were electrochemically prepared on glass plates coated with conducting thin films of SnO{sub 2}. A combined method from Goodman and Lubberts was used to determine the absorption coefficient and its dependence on the wavelength. The evolution of the optical gap versus the composition of Te in CdSe{sub 1-x}Te{sub x} was made and a value of 1.4 eV of the optical gap was obtained for the composition of CdSe{sub 0.65}Te{sub 0.35}. (orig.).

Laser ablation in CdZnTe crystal due to thermal self-focusing: Secondary phase hydrodynamic expansion

Energy Technology Data Exchange (ETDEWEB)

Medvid’, A., E-mail: mychko@latnet.lv [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia); Mychko, A.; Dauksta, E. [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia); Kosyak, V. [Sumy State University, 2, Rymskogo-Korsakova St., 40007 Sumy (Ukraine); Grase, L. [Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga (Latvia)

2016-06-30

Highlights: • We found two laser induced threshold intensity for CdZnTe crystal. • The laser beam self-focusing lead to increase of intensity of laser radiation at exit surface. • Laser ablation is a result of Te inclusion hydrodynamic expansion. - Abstract: The present paper deals with the laser ablation in CdZnTe crystal irradiated by pulsed infrared laser. Two values of threshold intensities of the laser ablation were determined, namely of about 8.5 and 6.2 MW/cm{sup 2} for the incident and the rear surfaces, correspondingly. Lower intensity of the laser ablation for the rear surface is explained by thermal self-focusing of the laser beam in the CdZnTe crystal due to heating of Te inclusions with a following hydrodynamic expansion.

Secondary overprinting of S-Se-Te signatures in the Earth's mantle: Implications for the Late Veneer

Science.gov (United States)

Koenig, S.; Luguet, A.; Lorand, J.; Pearson, D.

2013-12-01

Sulphur, Selenium and Tellurium are both chalcophile and highly siderophile elements (HSE) with near-chondritic ratios and absolute abundances in the terrestrial mantle that exceed those predicted by core-mantle differentiation[1]. These 'excess' HSE abundances have been attributed to addition of ca. 0.5% of chondrite-like material that hit the Earth in its accretionary stage between 4 to 3.8 billion years ago after core-mantle differentiation (Late Veneer[2]). Therefore, like other HSE, S, Se and Te are considered potential tracers for the composition of the Late Veneer, provided that their bulk silicate Earth abundances are properly constrained. In contrast to ca. 250 ppm S, Se and Te are ultra-trace elements in the terrestrial mantle. Like all HSE, they are furthermore controlled by base metal sulphides (BMS) and micrometric platinum group minerals (PGMs)[3]. This strong control exerted by the host mineralogy and petrology on the S-Se-Te systematics at both the micro-scale and the whole-rock scale makes detailed mineralogical and petrological studies of BMS and PGM a pre-requisite to fully understand and accurately interpret the whole-rock signatures. Here we combine in-situ sulphide data and detailed mineralogical observations with whole-rock S-Se-Te-HSE signatures of both lherzolites and harburgites from different geodynamic settings. We demonstrate that the near-chondritic Se and Te signature of 'fertile' mantle rocks (Se/Te ≈9×5) is not a primitive signature of the Earth's mantle, but rather reflects strong enrichment in metasomatic HSE host phases, which erased previous pristine signatures. Consequently, current attempts to identify a potential Late Veneer composition are seriously flawed because, neither refertilisation/metasomatism nor true melt depletion (e.g. harzburgitic residues) have been taken into account for the Primitive Upper Mantle composition estimate[4]. Our combined whole rock and in-situ sulphide data indicate a refertilisation trend

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Directory of Open Access Journals (Sweden)

Choi Hyojeong

2016-09-01

Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

International Nuclear Information System (INIS)

Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D.; Pavesi, M.

2014-01-01

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

Energy Technology Data Exchange (ETDEWEB)

Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

2014-06-23

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

On the role of Pb0 atoms on the nucleation and growth of PbSe and PbTe nanoparticles

International Nuclear Information System (INIS)

Garcia-Gutierrez, Domingo I.; Leon-Covian, Lina M. De; Garcia-Gutierrez, Diana F.; Treviño-Gonzalez, M.; Garza-Navarro, M. A.; Sepulveda-Guzman, S.

2013-01-01

In this contribution, a nucleation and growth mechanism of PbSe and PbTe nanoparticles are proposed. The formation and growth of PbSe and PbTe nanoparticles during their reaction synthesis were studied and followed using transmission electron microscopy, and their related techniques. In the synthesis method, trioctylphosphine-selenide and telluride were used as the chalcogen precursors, while lead oleate was employed as the lead precursor. Different synthesis conditions were tested to assess the effect of varying the reaction time, lead to chalcogen ratio, reaction temperature, and lead oleate concentration. The synthesized nanoparticles were characterized by means of electron diffraction, energy dispersive X-ray spectroscopy, scanning transmission electron microscopy, and electron energy loss spectroscopy, to obtain information related to their morphology, crystal structure, and composition. The experimental results suggest that the growth of the lead chalcogenide nanoparticles greatly relies on the reduction of Pb 2+ ions to Pb 0 atoms at early reaction times; this reduction of the lead precursor is evidenced by the formation of Pb nanoparticles with sizes between 1 and 3 nm under certain synthesis conditions. These Pb nanoparticles gradually disappear as the reaction progresses, suggesting that the reduced Pb 0 atoms are able to contribute to the growth of the PbSe and PbTe nanoparticles, reaching sizes between 8 and 18 nm. The current results contribute to a better understanding of the nucleation and growth mechanisms of lead chalcogenide nanoparticles, which will enable the definition of more efficient synthesis routes of these types of nanostructures.

Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition

International Nuclear Information System (INIS)

Li, B.S.; Akimoto, R.; Akita, K.; Hasama, H.

2004-01-01

A (CdS/ZnSe)/BeTe superlattice (SL), based on wide band gap II-VI compounds, with a large band offset of 3.1 eV was grown on a GaAs (001) substrate using molecular-beam epitaxy and an intersubband transition (ISB-T) of 0.78 eV (λ=1.58 μm) with a full width at half maximum (FWHM) of 96 meV observed. We studied structural properties using high-resolution x-ray diffraction combined with dynamic simulation and found through the strain state in samples that a ZnSe/BeTe interface having a quaternary interface layer (ZnTe) 0.45 (BeSe) 0.55 is preferentially formed despite the promotion of one molecular layer (ML) ZnTe interface formation. Be-Se bonds thus replace the Zn-Te bond in the transition region. For the CdS/ZnSe interface, an approximately 1 ML Zn 0.75 Cd 0.25 S ternary layer accompanied by ∼1 ML Zn 0.85 Cd 0.15 Se forms at the transition region due to Cd diffusion. X-ray (002) ω/2θ scan curves for (CdS/ZnSe)/BeTe SLs show sharp, intense satellite peaks exceeding ten orders, indicating high structure quality. We obtained excellent agreement between experimental diffraction patterns and the calculated curve via dynamic simulation for (CdS/ZnSe)/BeTe SLs. The good fits allows us to identify structure parameters in (CdS/ZnSe)/BeTe SLs, which are consistent with results of high-resolution transmission electron microscopy measurement. Based on dynamic simulated results, we obtained a structure of (CdS/ZnSe)/Be 1-x Mg x Te (x=1.2%) with an average lattice constant a SL matching the GaAs substrate. An ISB-T located at wavelength λ=1.55 μm with a narrow FWHM of 90 meV was thus realized at room temperature

Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

International Nuclear Information System (INIS)

Lee, Bong-Sub; Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone; Bishop, Stephen G.

2014-01-01

Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge 2 Sb 2 Te 5 and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge 2 Sb 2 Te 5 and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge 2 Sb 2 Te 5 includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Gross, Dieter Konrad Michael

2013-11-08

Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

Density functional/molecular dynamics simulations of nucleus-driven crystallization of amorphous Ge2Sb2Te5

Energy Technology Data Exchange (ETDEWEB)

Akola, Jaakko [Department of Physics, Tampere University of Technology (Finland); COMP Centre of Excellence, Department of Applied Physics, Aalto University (Finland); GRSS and PGI-1, Forschungszentrum Juelich (Germany); Kalikka, Janne; Larrucea, Julen [Nanoscience Center, Department of Physics, University of Jyvaeskylae (Finland); Jones, Robert O. [GRSS and PGI-1, Forschungszentrum Juelich (Germany)

2013-07-01

Early stages of nucleus-driven crystallization of the prototype phase change material Ge{sub 2}Sb{sub 2}Te{sub 5} have been studied by massively-parallel density functional/molecular dynamics simulations for amorphous samples (460 and 648 atoms) at 500, 600, and 700 K. All systems assumed a fixed cubic seed of 58 atoms and 6 vacancies in order to achieve sub-nanosecond phase transition. Crystallization occurs within 600 ps for the 460-atom system at 600 and 700 K, and signs of crystallization (nucleus growth, percolation) are present in the others. Crystallization is accompanied by an increase in the number of ABAB squares (A: Ge,Sb, B: Te), and atoms of all elements move significantly. The evolution of cavities/vacancies is closely monitored. The existence of Te-Te, Ge-Ge, Ge-Sb, and Sb-Sb (wrong) bonds is an inevitable consequence of rapid crystallization.

X-ray dosimetry of TlGaSe2 single crystals

International Nuclear Information System (INIS)

Kerimova, E.M.; Mustafaeva, S.N.; Mamedbeili, S.D.; Jabarov, J.N.; Iskenderova, P.M.; Kazimov, S.B.

2002-01-01

TlGaSe 2 compound belongs to group of layered semiconductors of A 3 B 3 C 2 6 -type. Photoelectric and optical properties of TlGaSe 2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe 2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe 2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K σ characterising X-ray sensitivity of investigated crystals are determined as the relative change of conductivity under X-ray radiation a per dose. There have been determined values of characteristic coefficients of TlGaSe 2 single crystal X-ray conductivity at different values of accelerating voltage (V a ) on the tube and corresponding doses of X-ray radiation. Analysis of obtained data showed that X-ray conductivity coefficients K σ in studied crystals are regularly decreased (from 0.276 to 0.033) as with the rise of dose (E=0.75-78.0 R/min) as with the increase of values of V a on X-ray tube (V a =254-50 keV). One of the possible reasons of observed regularities is that X-ray conductivity in investigated crystals, especially at comparatively low V a is due predominantly to radiation of thin layer of crystal. In this case with the rise of radiation intensity there have been started to prevail the mechanism of surface quadratic recombination which leads to observed decrease of X-ray conductivity. With the rise of accelerating potential 'effective hardness' is increased, as a result of which there

Zn2(TeO3)Br2

Science.gov (United States)

Zhang, Dong; Johnsson, Mats

2008-01-01

Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3)Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetra­hedra, and [TeO3 E] tetra­hedra (E being the 5s 2 lone pair of Te4+) joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3)Br2 is isostructural with the synthetic compounds Zn2(TeO3)Cl2, CuZn(TeO3)2, Co2(TeO3)Br2 and the mineral sophiite, Zn2(SeO3)Cl2. PMID:21202162

Growth and microtopographic study of CuInSe{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)

2016-05-23

The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential

KAUST Repository

Kong, Desheng

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi2Se3, Bi2Te3, and Sb2Te3 are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential. © 2010 American Chemical Society.

Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material

International Nuclear Information System (INIS)

Lee Meiling; Miao Xiangshui; Ting Leehou; Shi Luping

2008-01-01

Effect of In and Ge doping in the form of In 2 Ge 8 Sb 85 Te 5 on optical and thermal properties of eutectic Sb 70 Te 30 alloys was investigated. Crystalline structure of In 2 Ge 8 Sb 85 Te 5 phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of 30 ns is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable In 2 Ge 8 Sb 85 Te 5 phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability

Changes in the shapes of self-organized PbSe quantum dots during PbEuTe overgrowth investigated by anomalous X-ray diffraction

International Nuclear Information System (INIS)

Holy, V.; Schuelli, T.U.; Lechner, R.T.; Springholz, G.; Bauer, G.

2006-01-01

Anomalous X-ray diffraction was used for the investigation of shape and chemical composition of self-organized PbSe quantum dots covered by PbEuTe capping layers. From reciprocal-space maps of diffracted intensities measured at two energies of the primary radiation, we discriminated the contributions of the dot volumes and the surrounding crystal lattice to the diffracted intensity. We have found that the presence of Eu atoms suppresses the flattening of the dots during their overgrowth

Galvanomagnetic effects in n-Hg1-x-yCdxMnyTe and n-Hg1-yMnyTe crystals with εg>0

International Nuclear Information System (INIS)

Gluzman, N.G.; Lerinman, N.K.; Sabirzyanova, L.D.; Bodnaruk, O.A.; Gorbatyuk, I.N.; Rarenko, I.M.

1989-01-01

Longitudinal ρ zz and transverse ρ xx magnetoresistances and R hall coefficient in H magnetic fields up to 100 kE at 1.2≤T≤300 K are measured at n-Hg 1-x-y Cd x Mn y Te and n-Hg 1-y Mn y Te crystals (100≤ε g ≤260 meV) with N D -N A ≅10 15 cm -3 . Shubnikov-de-Gaas (SG) oscillations were observed at all specimens. Maxima positions of SG oscillations depend on T. For Hg 1-y Mn y Te crystals the position of zero maximum is shifted to large H direction, it is caused by abrupt (as compared to zone one) reduction of summary g-factor. Magnetophonon oscillations are determined at longitudinal magnetoresistance. Transition from metal conductivity to activation one occuring in magnetic field is studied; activation energy in nonmetallic range is determined. Some peculiarities of galvanomagnetic phenomena in n-Hg 1-y Mn y Te specimens, which indicate presence of p-type inclusions in n-type crystals, are determined

Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

Science.gov (United States)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2016-08-01

Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

Highly Enhanced Fluorescence of CdSeTe Quantum Dots Coated with Polyanilines via In-Situ Polymerization and Cell Imaging Application.

Science.gov (United States)

Xue, Jingjing; Chen, Xinyi; Liu, Shanglin; Zheng, Fenfen; He, Li; Li, Lingling; Zhu, Jun-Jie

2015-09-02

The polyaniline (PAN)-coated CdSeTe quantum dots (QDs) were prepared by in situ polymerization of aniline on the surface of CdSeTe QDs. The PAN-coated CdSeTe QDs has a tremendously enhanced fluorescence (∼40 times) and improved biocompatibility compared to the uncoated CdSeTe QDs. The fluorescence intensity of the PAN-coated CdSeTe QDs can be adjusted by controlling the construction parameters of the PAN shell. The kinetics of the in situ controllable polymerization process was studied by varying the temperature, and the apparent activation energy of polymerization was estimated. With the same method, a series of the PAN derivatives were also tested to coat the CdSeTe QDs in this study. All the QDs showed a significant enhancement of the fluorescence intensity and better biocompatibility. The significantly enhanced fluorescence can provide highly amplified signal for luminescence-based cell imaging.

First-principles study on electronic and optical properties of Cu2ZnSiV I4 (VI=S, Se, and Te quaternary semiconductors

Directory of Open Access Journals (Sweden)

Xuebiao Zhang

2015-05-01

Full Text Available The electronic and optical properties of Cu2ZnSiS4, Cu2ZnSiSe4 and Cu2ZnSiTe4 in kesterite and stannite structures are systematically studied using first-principles calculations. Crystal field splitting, optical transitions, p-d bonding, and anti-bonding overlapping are analyzed. The physical and chemical trends in these properties are investigated with respect to the crystal structure and anion atomic number. The optical spectra, such as dielectric function, refractive index, reflectivity and absorption coefficient are explored in a broad range of energy. A good agreement between the calculated results and experimental data is obtained.

Thermoelectric properties and thermal stability of Bi-doped PbTe single crystal

Science.gov (United States)

Chen, Zhong; Li, Decong; Deng, Shuping; Tang, Yu; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Yang, Peizhi; Deng, Shukang

2018-06-01

In this study, n-type Bi-doped single-crystal PbTe thermoelectric materials were prepared by melting and slow cooling method according to the stoichiometric ratio of Pb:Bi:Te = 1-x:x:1 (x = 0, 0.1, 0.15, 0.2, 0.25). The X-ray diffraction patterns of Pb1-xBixTe samples show that all main diffraction peaks are well matched with the PbTe matrix, which has a face-centered cubic structure with the space group Fm 3 bar m . Electron probe microanalysis reveals that Pb content decreases gradually, and Te content remains invariant basically with the increase of Bi content, indicating that Bi atoms are more likely to replace Pb atoms. Thermal analysis shows that the prepared samples possess relatively high thermal stability. Simultaneously, transmission electron microscopy and selected area electron diffraction pattern indicate that the prepared samples have typical single-crystal structures with good mechanical properties. Moreover, the electrical conductivity of the prepared samples improved significantly compared with that of the pure sample, and the maximum ZT value of 0.84 was obtained at 600 K by the sample with x = 0.2.

Impact of Antibody Bioconjugation on Emission and Energy Band Profile of CdSeTe/ZnS Quantum Dots

Science.gov (United States)

Torchynska, T. V.; Gomez, J. A. Jaramillo; Polupan, G.; Macotela, L. G. Vega

2018-03-01

The variation of the photoluminescence (PL) and Raman scattering spectra of CdSeTe/ZnS quantum dots (QDs) on conjugation to an antibody has been investigated. Two types of CdSeTe/ZnS QD with different emission wavelength (705 nm and 800 nm) were studied comparatively before and after conjugation to anti-pseudorabies virus antibody (AB). Nonconjugated QDs were characterized by Gaussian-type PL bands. PL shifts to higher energy and asymmetric shape of PL bands was detected in PL spectra of bioconjugated QDs. The surface-enhanced Raman scattering effect was exhibited by the bioconjugated CdSeTe/ZnS QDs, indicating that the excitation light used in the Raman study generated electric dipoles in the AB molecules. The optical bandgap of the CdSeTe core was calculated numerically as a function of its radius based on an effective mass approximation model. The energy band diagrams for non- and bioconjugated CdSeTe/ZnS QDs were obtained, revealing a type II quantum well in the CdSeTe core. The calculations show that AB dipoles, excited in the bioconjugated QDs, stimulate a change in the energy band diagram of the QDs that alters the PL spectrum. These results could be useful for improving the sensitivity of QD biosensors.

On the role of Pb{sup 0} atoms on the nucleation and growth of PbSe and PbTe nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Garcia-Gutierrez, Domingo I., E-mail: domingo.garciagt@uanl.edu.mx; Leon-Covian, Lina M. De; Garcia-Gutierrez, Diana F. [Universidad Autonoma de Nuevo Leon, UANL, Facultad de Ingenieria Mecanica y Electrica, FIME (Mexico); Trevino-Gonzalez, M. [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia, CIIDIT, Universidad Autonoma de Nuevo Leon, UANL (Mexico); Garza-Navarro, M. A.; Sepulveda-Guzman, S. [Universidad Autonoma de Nuevo Leon, UANL, Facultad de Ingenieria Mecanica y Electrica, FIME (Mexico)

2013-05-15

In this contribution, a nucleation and growth mechanism of PbSe and PbTe nanoparticles are proposed. The formation and growth of PbSe and PbTe nanoparticles during their reaction synthesis were studied and followed using transmission electron microscopy, and their related techniques. In the synthesis method, trioctylphosphine-selenide and telluride were used as the chalcogen precursors, while lead oleate was employed as the lead precursor. Different synthesis conditions were tested to assess the effect of varying the reaction time, lead to chalcogen ratio, reaction temperature, and lead oleate concentration. The synthesized nanoparticles were characterized by means of electron diffraction, energy dispersive X-ray spectroscopy, scanning transmission electron microscopy, and electron energy loss spectroscopy, to obtain information related to their morphology, crystal structure, and composition. The experimental results suggest that the growth of the lead chalcogenide nanoparticles greatly relies on the reduction of Pb{sup 2+} ions to Pb{sup 0} atoms at early reaction times; this reduction of the lead precursor is evidenced by the formation of Pb nanoparticles with sizes between 1 and 3 nm under certain synthesis conditions. These Pb nanoparticles gradually disappear as the reaction progresses, suggesting that the reduced Pb{sup 0} atoms are able to contribute to the growth of the PbSe and PbTe nanoparticles, reaching sizes between 8 and 18 nm. The current results contribute to a better understanding of the nucleation and growth mechanisms of lead chalcogenide nanoparticles, which will enable the definition of more efficient synthesis routes of these types of nanostructures.

Fundamental optical absorption edge in MnGa2Te4 single crystals

International Nuclear Information System (INIS)

Medvedkin, G.A.; Rud, Yu.V.; Tairov, M.A.

1988-01-01

A study is made of the optical properties of oriented MnGa 2 Te 4 crystals in the region of the fundamental absorption edge. The energy gap width for the temperatures 77, 300, and 370 K is determined to be E G = 1.635, 1.52, and 1.50 eV. The spectral response α(ℎω/2π) is found to follow Urbach's rule thoughout the temperature range studied, the slope of the absorption edge remaining constant (α = 10 2 cm -1 ). Crystal annealing with subsequent rapid cooling results in a shift of the absorption edge longward by 25 meV with the exponential form of α(ℎω/2π) prevailing over the range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be a sum of the effects coming from the density-of-states tails, local scattering centers associated with a high vacancy concentration, and electron-phonon interaction. Optical linear dichroism of the absorption edge of MnGa 2 Te 4 single crystals with pseudotetragonal structure is revealed and studied. The single crystals are established to be optically uniaxial, their optical transmission dichroism being negative. It is shown that the minimal direct optical transitions in MnGa 2 Te 4 are allowed in the E parallel c polarization in the temperature range 77 to 370 K, the crystal-field splitting of the valence band increasing with temperature. (author)

Effect of Se substitution on the phase change properties of Ge2Sb2Te5

Science.gov (United States)

Shekhawat, Roopali; Rangappa, Ramanna; Gopal, E. S. R.; Ramesh, K.

2018-05-01

Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contrast in electrical resistivity (about 103). The phase change is between amorphous and metastable NaCl structure occurs at about 150°C and not to the stable hexagonal phase which occurs at a high temperature (> 250 °C). In GST, about 50 % of Te substituted by Se (Ge2Sb2Te2.5Se2.5) is found to increase the contrast in electrical resistivity by 7 orders of magnitude (about 4 orders of magnitude higher than GST). The phase transition in Se added GST also found to be between amorphous and the stable hexagonal structure. The threshold voltage at which the Ge2Sb2Te2.5Se2.5 switches to the high conducting state increases to 9V as compared to 2V in GST. Interestingly, the threshold current decrease to 1mA as compared to 1.8mA in GST indicating the Se substitution reduces the power needed for switching between the low and high conducting states. The reduction in power needed for phase change, high contrast in electrical resistivity with high thermal stability makes Ge2Sb2Te2.5Se2.5 as a better candidate for PCRAM.

The effect of substrate temperature upon the compositions of Mg and Se in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Nishio, M.; Ito, R.; Tanaka, K.; Urata, K.; Nakamura, Y.; Tanaka, T. [Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Saito, K.; Guo, Q.X. [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

2014-07-15

The growth of Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layers was performed on (100) ZnTe substrate by metalorganic vapour phase epitaxy using dimethylzinc, bis-methylcyclopentadienyl-magnesium, diethyltelluride and diethylselenide. The effects of substrate temperature upon the compositions of Mg and Se have been investigated. The Mg composition in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer is significantly enhanced at low substrate temperature. Although the Se composition decreases with decreasing the substrate temperature, Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer with a relatively high Se composition of 0.3 is obtainable at a low substrate temperature as low as 380 C. For all the layers, a two-mode behaviour with ZnTe- and MgTe-like longitudinal optical phonon modes is confirmed by Raman scattering. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation on lattice parameters and superconducting properties in Fe(Te, Se, S) ternary-chalcogen system

Energy Technology Data Exchange (ETDEWEB)

Guo, Zhongnan; Zhang, Huanhuan; Han, Bingling; Yuan, Wenxia, E-mail: wxyuanwz@163.com

2015-02-15

Highlights: • A series sample of Fe{sub 1.02}Te{sub 0.85}Se{sub 0.15−x}S{sub x} has been synthesised. • The lattice parameters is basically unchanged with the S doping. • The superconductivity is clearly suppressed with the S substitution of Se. • The solid solubility region of the tetragonal phase in this system is discussed. - Abstract: A series of samples with the nominal compositions Fe{sub 1.02}Te{sub 0.85}Se{sub 0.15−x}S{sub x} (x = 0, 0.0375, 0.075, 0.1125 and 0.15) have been synthesized to study the influence of the S substitution of Se on the lattice parameters and superconducting properties. It has been found that the S substitution basically has no effect on the lattice parameters a and c of the tetragonal phase. However, T{sub c} of Fe{sub 1.02}(Te{sub 0.85}Se{sub 0.15−x}S{sub x}) superconductors clearly decreases with S doping.

NIR-Emitting Alloyed CdTeSe QDs and Organic Dye Assemblies: A Nontoxic, Stable, and Efficient FRET System

Directory of Open Access Journals (Sweden)

Doris E. Ramírez-Herrera

2018-04-01

Full Text Available In the present work, we synthesize Near Infrared (NIR-emitting alloyed mercaptopropionic acid (MPA-capped CdTeSe quantum dots (QDs in a single-step one-hour process, without the use of an inert atmosphere or any pyrophoric ligands. The quantum dots are water soluble, non-toxic, and highly photostable and have high quantum yields (QYs up to 84%. The alloyed MPA-capped CdTeSe QDs exhibit a red-shifted emission, whose color can be tuned between visible and NIR regions (608–750 nm by controlling the Te:Se molar ratio in the precursor mixtures and/or changing the time reaction. The MPA-capped QDs were characterized by UV-visible absorption spectroscopy, fluorescence spectroscopy, transmission electron microscopy (TEM, energy dispersive X-ray spectroscopy (EDS, and zeta potential measurements. Photostability studies were performed by irradiating the QDs with a high-power xenon lamp. The ternary MPA-CdTeSe QDs showed greater photostability than the corresponding binary MPA-CdTe QDs. We report the Förster resonance energy transfer (FRET from the MPA-capped CdTeSe QDs as energy donors and Cyanine5 NHS-ester (Cy5 dye as an energy acceptor with efficiency (E up to 95%. The distance between the QDs and dye (r, the Förster distance (R0, and the binding constant (K are reported. Additionally, cytocompatibility and cell internalization experiments conducted on human cancer cells (HeLa cells revealed that alloyed MPA-capped CdTeSe QDs are more cytocompatible than MPA-capped CdTe QDs and are capable of ordering homogeneously all over the cytoplasm, which allows their use as potential safe, green donors for biological FRET applications.

Identification of a type of defects in CdTe crystals by the piezo spectroscopic method

International Nuclear Information System (INIS)

Tarbajev, M.Yi.

1999-01-01

The dependence of line shifts and the photoluminescence line intensity of bound exciton complexes on the direction of elastic deformation are studied for CdTe crystals at 4.2 K. On the basis of the found differences in piezo optic behavior of excitons bound to neutral donors and acceptors, the method of identification of a type of defects in CdTe crystals is proposed

Syntheses and crystal structures of BaAgTbS{sub 3}, BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Prakash, Jai; Beard, Jessica C.; Ibers, James A. [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States); Mesbah, Adel [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States); ICSM-UMR 5257 CNRS/CEA/UM2/ENSCM, Bat 426, BP 17171, 30207 Bagnols/Ceze (France)

2015-06-15

Five new quaternary chalcogenides of the 1113 family, namely BaAgTbS{sub 3}, BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3}, were synthesized by the reactions of the elements at 1173-1273 K. For CsAgUTe{sub 3} CsCl flux was used. Their crystal structures were determined by single-crystal X-ray diffraction studies. The sulfide BaAgTbS{sub 3} crystallizes in the BaAgErS{sub 3} structure type in the monoclinic space group C{sup 3},{sub 2h}-C2/m, whereas the tellurides BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3} crystallize in the KCuZrS{sub 3} structure type in the orthorhombic space group D{sup 1},{sub 2}{sup 7},{sub h}-Cmcm. The BaAgTbS{sub 3} structure consists of edge-sharing [TbS{sub 6}{sup 9-}] octahedra and [AgS{sub 5}{sup 9-}] trigonal pyramids. The connectivity of these polyhedra creates channels that are occupied by Ba atoms. The telluride structure features {sup 2}{sub ∞}[MLnTe{sub 3}{sup 2-}] layers for BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and {sup 2}{sub ∞}[AgUTe{sub 3}{sup 1-}] layers for CsAgUTe{sub 3}. These layers comprise [MTe{sub 4}] tetrahedra and [LnTe{sub 6}] or [UTe{sub 6}] octahedra. Ba or Cs atoms separate these layers. As there are no short Q..Q (Q = S or Te) interactions these compounds achieve charge balance as Ba{sup 2+}M{sup +}Ln{sup 3+}(Q{sup 2-}){sub 3} (Q = S and Te) and Cs{sup +}Ag{sup +}U{sup 4+}(Te{sup 2-}){sub 3}. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

To study the linear and nonlinear optical properties of Se-Te-Bi-Sn/PVP (polyvinylpyrrolidone) nanocomposites

Science.gov (United States)

Tyagi, Chetna; Yadav, Preeti; Sharma, Ambika

2018-05-01

The present work reveals the optical study of Se82Te15Bi1.0Sn2.0/polyvinylpyrrolidone (PVP) nanocomposites. Bulk glasses of chalcogenide was prepared by well-known melt quenching technique. Wet chemical technique is proposed for making the composite of Se82Te15Bi1.0Sn2.0 and PVP polymer as it is easy to handle and cost effective. The composites films were made on glass slide from the solution of Se-Te-Bi-Sn and PVP polymer using spin coating technique. The transmission as well as absorbance is recorded by using UV-Vis-NIR spectrophotometer in the spectral range 350-700 nm. The linear refractive index (n) of polymer nanocomposites are calculated by Swanepoel approach. The linear refractive index (n) PVP doped Se82Te15Bi1.0Sn2.0 chalcogenide is found to be 1.7. The optical band gap has been evaluated by means of Tauc extrapolation method. Tichy and Ticha model was utilized for the characterization of nonlinear refractive index (n2).

Metastable phases freezing from melts of reciprocal systems PbX + CdI2=CdX + PbI2 (X=S, Se, Te)

International Nuclear Information System (INIS)

Odin, I.N.; Chukichev, M.V.

2001-01-01

The transformations in the mutual PbX + CdI 2 =CdX + PbI 2 (X=S, Se, Te) systems leading to the crystallization of metastable polytypical modifications of lead iodide in metastable ternary compounds are studied for the first time. Microstructural and X-ray diffraction analyses were conducted. Their phase diagrams were constructed. The luminescence properties of the stable and metastable modifications of the lead iodide and the metastable compound Pb 4 SeI 6 were investigated. The lines 504 and 512 nm are noted in the 2H-PbI 2 cathodoluminescence spectra. The close lines - 508 and 516 nm provide for the 6R-PbI 2 modification. The metastable compound Pb 4 SeI 6 is characterized by the 769 and 868 nm lines [ru

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

Science.gov (United States)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

2015-07-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

2015-01-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Gross, Dieter Konrad Michael

2013-11-08

Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

International Nuclear Information System (INIS)

Gross, Dieter Konrad Michael

2013-01-01

Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

Ultra-thin ZnSe: Anisotropic and flexible crystal structure

Energy Technology Data Exchange (ETDEWEB)

Bacaksiz, C., E-mail: cihanbacaksiz@iyte.edu.tr [Department of Physics, Izmir Institute of Technology, 35430 Izmir (Turkey); Senger, R.T. [Department of Physics, Izmir Institute of Technology, 35430 Izmir (Turkey); Sahin, H. [Department of Photonics, Izmir Institute of Technology, 35430 Izmir (Turkey)

2017-07-01

Highlights: • Ultra-thin ZnSe is dynamically stable. • Ultra-thin ZnSe is electronically direct-gap semiconductor. • Ultra-thin ZnSe is ultra-flexible. • Ultra-thin ZnSe is mechanically in-plane anisotropic. - Abstract: By performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal . The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.

Ultra-thin ZnSe: Anisotropic and flexible crystal structure

International Nuclear Information System (INIS)

Bacaksiz, C.; Senger, R.T.; Sahin, H.

2017-01-01

Highlights: • Ultra-thin ZnSe is dynamically stable. • Ultra-thin ZnSe is electronically direct-gap semiconductor. • Ultra-thin ZnSe is ultra-flexible. • Ultra-thin ZnSe is mechanically in-plane anisotropic. - Abstract: By performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal . The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.

Signatures of charge inhomogeneities in the infrared spectra of topological insulators Bi2Se3, Bi2Te3 and Sb2Te3

International Nuclear Information System (INIS)

Dordevic, S V; Wolf, M S; Stojilovic, N; Lei Hechang; Petrovic, C

2013-01-01

We present the results of an infrared spectroscopy study of topological insulators Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 . Reflectance spectra of all three materials look similar, with a well defined plasma edge. However, there are some important differences. Most notably, as temperature decreases the plasma edge shifts to lower frequencies in Bi 2 Se 3 , whereas in Bi 2 Te 3 and Sb 2 Te 3 it shifts to higher frequencies. In the loss function spectra we identify asymmetric broadening of the plasmon, and assign it to the presence of charge inhomogeneities. It remains to be seen if charge inhomogeneities are characteristic of all topological insulators, and whether they are of intrinsic or extrinsic nature.

Chevrel-phase solid solution Mo 6Se 8- xTe x. Study of its superconducting, magnetic and NMR properties

Science.gov (United States)

Hamard1a, C.; Auffret, V.; Peña, O.; Le Floch, M.; Nowak, B.; Wojakowski, A.

2000-09-01

The Chevrel-phase solid solution Mo 6Se 8-Mo 6Te 8 was studied by X-ray diffraction, AC and DC magnetic susceptibility and 77Se and 125Te NMR spectroscopy. From the smooth evolution of the lattice parameters and superconducting critical temperatures, a progressive substitution of selenium atoms by tellurium is shown, on the whole range of composition 0⩽ x⩽8, in the formulation Mo 6Se 8- xTe x: the unit-cell volume increases linearly because of the larger ionic size of tellurium, while Tc decreases rapidly (from 6.45 down to 0 K) because of the different formal oxidation states of the anions and a probable evolution of the Fermi level in the density of states. Results of magnetic susceptibility support this model and suggest the inhibition of the intrinsic metallic behavior with increasing x. The NMR spectra of the binaries Mo 6Se 8 and Mo 6Te 8 reveal two significant features, attributed to two different chalcogen positions in the R 3¯ symmetry. At low Se contents in Mo 6Se 8- xTe x ( x=7.5, 7 and 6), selenium first fills the two X(2) sites along the three-fold axis (2c positions), and then it becomes statistically distributed over the general 6f positions, leading to broad 77Se NMR lines. On the other hand, substitution of Te atoms in Mo 6Se 8 seems to occur in a random way, creating large perturbations on the 125Te NMR spectra, over the whole range of x. Theoretical analysis based on the presence of two anisotropic lines (of axial and non-axial symmetries, respectively) allowed us to estimate their anisotropy factors and to perfectly simulate the frequency response of both Mo 6Se 8 and Mo 6Te 8 binaries. Analysis of the Knight shift anisotropy leads us to conclude about the importance of the molybdenum z 2 molecular orbital contribution which controls the Mo-X dipolar interactions.

Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures

International Nuclear Information System (INIS)

Zaitsev, S. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

2008-01-01

In is shown that, at high densities of spatially separated electrons and holes in type-II ZnSe/BeTe heterostructures, the conditions for resonance tunneling of photoexcited holes from the ZnSe layer to the BeTe layer are attainable. Nonlinear behavior of the intensity of the photoluminescence band corresponding to spatially direct optical transitions with photoexcitation intensity is observed. Numerical calculations are carried out, and the results are in good agreement with the experimental data in a wide region of variation of the optical pumping intensity

Stellar laboratories . IX. New Se v, Sr iv-vii, Te vi, and I vi oscillator strengths and the Se, Sr, Te, and I abundances in the hot white dwarfs G191-B2B and RE 0503-289

Science.gov (United States)

Rauch, T.; Quinet, P.; Knörzer, M.; Hoyer, D.; Werner, K.; Kruk, J. W.; Demleitner, M.

2017-10-01

Context. To analyze spectra of hot stars, advanced non-local thermodynamic equilibrium (NLTE) model-atmosphere techniques are mandatory. Reliable atomic data is crucial for the calculation of such model atmospheres. Aims: We aim to calculate new Sr iv-vii oscillator strengths to identify for the first time Sr spectral lines in hot white dwarf (WD) stars and to determine the photospheric Sr abundances. To measure the abundances of Se, Te, and I in hot WDs, we aim to compute new Se v, Te vi, and I vi oscillator strengths. Methods: To consider radiative and collisional bound-bound transitions of Se v, Sr iv - vii, Te vi, and I vi in our NLTE atmosphere models, we calculated oscillator strengths for these ions. Results: We newly identified four Se v, 23 Sr v, 1 Te vi, and three I vi lines in the ultraviolet (UV) spectrum of RE 0503-289. We measured a photospheric Sr abundance of 6.5+ 3.8-2.4× 10-4 (mass fraction, 9500-23 800 times solar). We determined the abundances of Se (1.6+ 0.9-0.6× 10-3, 8000-20 000), Te (2.5+ 1.5-0.9× 10-4, 11 000-28 000), and I (1.4+ 0.8-0.5× 10-5, 2700-6700). No Se, Sr, Te, and I line was found in the UV spectra of G191-B2B and we could determine only upper abundance limits of approximately 100 times solar. Conclusions: All identified Se v, Sr v, Te vi, and I vi lines in the UV spectrum of RE 0503-289 were simultaneously well reproduced with our newly calculated oscillator strengths. Based on observations with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS5-26666. Based on observations made with the NASA-CNES-CSA Far Ultraviolet Spectroscopic Explorer. Full Tables A.15 to A.21 are only available via the German Astrophysical Virtual Observatory (GAVO) service TOSS (http://dc.g-vo.org/TOSS).

Explorations of new phases in the Ga(III)/In(III)-Mo(VI)-Se(IV)/Te(IV)-O systems.

Science.gov (United States)

Kong, Fang; Hu, Chun-Li; Hu, Ting; Zhou, Yong; Mao, Jiang-Gao

2009-07-07

Systematic explorations of new phases in the Ga(III)/In(III)-Mo(VI)-Se(IV)/Te(IV)-O systems by hydrothermal syntheses or solid-state reactions at high-temperature led to four new quaternary compounds, namely, Ga(2)MoQ(2)O(10) (Q = Se, Te), In(2)Mo(2)Se(2)O(13)(H(2)O) and In(2)MoTe(2)O(10). Ga(2)MoQ(2)O(10) (Q = Se, Te) are isostructural and their structures feature a 3D network of gallium selenite/tellurite with 12-member ring tunnels along b-axis, the distorted MoO(6) octahedra are attached on the wall of the above tunnels. The structure of In(2)Mo(2)Se(2)O(13)(H(2)O) features a new pillared-layered architecture composed of 2D indium(III) selenite layers that are interconnected by Mo(2)O(10) dimers, forming 8-membered ring tunnels along the b-axis. The structure of In(2)MoTe(2)O(10) features a 2D indium oxide layer formed by corner- and edge-sharing InO(6) and InO(7) polyhedra with MoO(4) tetrahedra and TeO(n) (n = 4, 5) polyhedra hanging on both sides of the layer, there are weak interlayer Te-O bonds of 2.512 A. Results of optical diffuse reflectance spectrum measurements indicate that all four compounds are insulators, which are in agreement with results of band structure calculations based on DFT methods.

Excitation states in type-II ZnSe/BeTe quantum wells

International Nuclear Information System (INIS)

Platonov, A.V.; Kochereshko, V.P.; Yakovlev, D.R.; Zehnder, U.; Ossau, W.; Fisher, F.; Litz, Th.; Waag, A.; Landwehr, G.

1997-01-01

We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction. (author)

Synthesis of Cu(In,Ga)Se{sub 2} crystals using a crank ball mill

Energy Technology Data Exchange (ETDEWEB)

Yamada, Suzuka; Noji, Hideki; Akaki, Yoji [Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo Miyazaki 885-8567 (Japan); Okamoto, Tomoichiro [Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan)

2015-06-15

Cu(In,Ga)Se{sub 2} (CIGS) crystals were synthesized by a mechanochemical (MC) process using a crank ball mill. The molar ratios of starting materials were Cu:In:Ga:Se=1:1-x:x:2 (0≤x≤1) and Cu:In:Ga:Se=1:0.7:0.3:y (2≤y≤3). The reaction time reduced with decreasing Se and Ga molar ratios. The collection rate decreased with longer reaction times. From XRD patterns, we confirmed that the CuInSe{sub 2} and/or CuGaSe{sub 2}crystals were successfully grown when the powders reacted. Although the crystals grown with a selenium molar ration of 2 were Se-poor, those grown at a molar ratio of 3 were Se-rich. When Se increasing molar ratio, Cu, In, and Ga were away from the stoichiometric. With a molar ratio of Cu:In:Ga:Se=1:0.7:0.3:2.5∝2.7, their composition became stoichiometric. Crystal morphology was varied. CIGS crystals were thus successfully synthesized using a crank ball mill. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis of metals chalcogenides nano-particles from H{sub 2}X (X=S, Se, Te) produced electrochemically; Synthese de nanoparticules de chalcogenures de metaux a partir de H{sub 2}X (X=S, Se, Te) produit electrochimiquement

Energy Technology Data Exchange (ETDEWEB)

Bastide, S.; Tena-Zaera, R.; Alleno, E.; Godart, C.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, 94 - Thiais (France); Hodes, G. [Weizmann Institute of Science, Rehovot (Israel)

2006-07-01

In this work, an electrochemical method to produce H{sub 2}X (X=S, Se, Te) hydrides in a controlled way (without being able to store them) and to transfer them directly in the synthesis reactor has been perfected. By this method, the use of H{sub 2}Te has been possible. The method uses the reduction of the elementary chalcogenide in acid medium. The Te being conductor, it can be directly used as electrode, on the other hand S and Se are insulators. Nevertheless, graphite-S or Se conducing composite electrodes can also be used. When the electrolyte composition (pH, salts presence) is well adjusted, the essential of the cathodic current is consumed by the chalcogenide reduction (low evolution of H{sub 2}) with faradic yields of about 100% for H{sub 2}S and H{sub 2}Se and 40% for HeTe. The use of H{sub 2}X allows the synthesis of nano-particles of metals chalcogenides directly by reaction with dissolved metallic salts in aqueous or organic medium and precipitation. Thus it has been possible to prepare all the CdX compounds under the form of nano-particles of diameter between 3 and 5 nm by bubbling of the gaseous hydrides in aqueous acetate solutions of Cd. In producing concomitantly H{sub 2}S and H{sub 2}Se, nano-particles of solid solutions CdS{sub x}Se{sub 1-x} have been synthesized too. (O.M.)

Thermoelectric properties of Bi2Te3-Bi2Se3 solid solutions prepared by attrition milling and hot pressing

International Nuclear Information System (INIS)

Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

2014-01-01

Bi 2 Te 3-y Se y (y = 0.15 - 0.6) solid solutions were prepared by attrition milling and hot pressing. The lattice constants decreased with increasing Se content, indicating that the Se atoms were successfully substituted into the Te sites. All specimens exhibited n-type conduction, and their electrical resistivities increased slightly with increasing temperature. With increasing Se content, the Seebeck coefficients increased while the thermal conductivity decreased due to the increase in phonon scattering. The maximum figure of merit obtained was 0.63 at 440 K for the undoped Bi 2 Te 2.4 Se 0.6 solid solution.

Double stage crystallization of bulk Ge20Te80 glass

International Nuclear Information System (INIS)

Parthasarathy, G.; Bandyopadhyay, A.K.; Gopal, E.S.R.; Subbanna, G.N.

1984-01-01

The growing interest of the semiconducting glasses is partly because of their interesting electrical and optical properties. These properties are usually connected with their crystallization. In many glasses, the glass-supercooled liquid transition precedes crystallization. The glass transition temperature (Tsub(g)) is found to exhibit multistage processes for a few systems. In this communication, we report the observation of a double Tsub(g) effect in bulk Ge 20 Te 80 glass and also explain the structural changes taking place in the two stages. (author)

Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells.

Science.gov (United States)

Jiao, Shuang; Shen, Qing; Mora-Seró, Iván; Wang, Jin; Pan, Zhenxiao; Zhao, Ke; Kuga, Yuki; Zhong, Xinhua; Bisquert, Juan

2015-01-27

Even though previously reported CdTe/CdSe type-II core/shell QD sensitizers possess intrinsic superior optoelectronic properties (such as wide absorption range, fast charge separation, and slow charge recombination) in serving as light absorbers, the efficiency of the resultant solar cell is still limited by the relatively low photovoltage. To further enhance photovoltage and cell efficiency accordingly, ZnTe/CdSe type-II core/shell QDs with much larger conduction band (CB) offset in comparison with that of CdTe/CdSe (1.22 eV vs 0.27 eV) are adopted as sensitizers in the construction of quantum dot sensitized solar cells (QDSCs). The augment of band offset produces an increase of the charge accumulation across the QD/TiO2 interface under illumination and induces stronger dipole effects, therefore bringing forward an upward shift of the TiO2 CB edge after sensitization and resulting in enhancement of the photovoltage of the resultant cell devices. The variation of relative chemical capacitance, Cμ, between ZnTe/CdSe and reference CdTe/CdSe cells extracted from impedance spectroscopy (IS) characterization under dark and illumination conditions clearly demonstrates that, under light irradiation conditions, the sensitization of ZnTe/CdSe QDs upshifts the CB edge of TiO2 by the level of ∼ 50 mV related to that in the reference cell and results in the enhancement of V(oc) of the corresponding cell devices. In addition, charge extraction measurements have also confirmed the photovoltage enhancement in the ZnTe/CdSe cell related to reference CdTe/CdSe cell. Furthermore, transient grating (TG) measurements have revealed a faster electron injection rate for the ZnTe/CdSe-based QDSCs in comparison with the CdSe cells. The resultant ZnTe/CdSe QD-based QDSCs exhibit a champion power conversion efficiency of 7.17% and a certified efficiency of 6.82% under AM 1.5 G full one sun illumination, which is, as far as we know, one of the highest efficiencies for liquid-junction QDSCs.

Synthesis and crystal structure determination of Br2SeIBr ...

Indian Academy of Sciences (India)

Unknown

termined by single crystal X-ray diffraction method. This compound was ... company and SeBr4 was prepared from the reaction of Se powder (0⋅1 g) with Br2 ... angles of Br2SeIBr and table 4 shows anisotropic displace- ment parameters.

Raman Spectroscopy of Two-Dimensional Bi2TexSe3 − x Platelets Produced by Solvothermal Method

Directory of Open Access Journals (Sweden)

Jian Yuan

2015-08-01

Full Text Available In this paper, we report a facile solvothermal method to produce both binary and ternary compounds of bismuth chalcogenides in the form of Bi2TexSe3 − x. The crystal morphology in terms of geometry and thickness as well as the stoichiometric ratio can be well controlled, which offers the opportunities to systematically investigate the relationship between microstructure and phonon scattering by Raman spectroscopy. Raman spectra of four compounds, i.e., Bi2Se3, Bi2Se2Te, Bi2SeTe2 and Bi2Te3, were collected at four different excitation photon energies (2.54, 2.41, 1.96, and 1.58 eV. It is found that the vibrational modes are shifted to higher frequency with more Se incorporation towards the replacement of Te. The dependence of Raman vibrational modes on excitation photon energy was investigated. As the excitation photon energy increases, three Raman vibrational modes (A1g1, Eg2 and A1g2 of the as-produced compounds move to low frequency. Three Infrared-active (IR-active modes were observed in thin topological insulators (TIs crystals.

Single crystal growth and structure refinements of CsMxTe2-xO6 (M = Al, Ga, Ge, In) pyrochlores

International Nuclear Information System (INIS)

Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

2011-01-01

Graphical abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown and structure refinements indicate deviations from ideal stoichiometry presumably related to mixed valency of tellurium. Highlights: → Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown. → Structure refinements from single crystal X-ray diffraction data confirm e structure. → Deviations from ideal stoichiometry suggest mixed valency of tellurium and hence conductivity. -- Abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO 2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium.

Crystallization features of ternary reversible reciprocal systems

International Nuclear Information System (INIS)

Tomashik, V.N.; Shcherbak, L.P.; Fejchuk, P.I.; Grytsiv, V.I.

2006-01-01

Some features of the primary crystallization of phases in ternary reversible reciprocal system are considered and discussed. The diagonal join CdTe-GeSe of the CdTe + GeSe = CdSe + GeTe ternary reciprocal system is studied to show that the features in primary and secondary heating and cooling curves in such systems under fully equilibrium conditions are not reproduced upon consecutive heating and cooling sessions, because of the existence of different amounts of the reagents and the reaction products in the mixture; the temperatures of each transformation lie in a range. Those who experimentally investigate other ternary and more complex reversible reciprocal systems should take this fact into account [ru

Crystallization processes in Ge2Sb2Se4Te glass

Czech Academy of Sciences Publication Activity Database

Svoboda, R.; Bezdička, Petr; Gutwirth, J.; Malek, J.

2015-01-01

Roč. 61, JAN (2015), s. 207-214 ISSN 0025-5408 Institutional support: RVO:61388980 Keywords : Chalcogenides * Glass es * Differential scanning calorimetry (DSC) * X-ray diffraction * Crystal structure Subject RIV: CA - Inorganic Chemistry Impact factor: 2.435, year: 2015

Fabrication of Fe1.1Se0.5Te0.5 bulk by a high energy ball milling technique

Science.gov (United States)

Liu, Jixing; Li, Chengshan; Zhang, Shengnan; Feng, Jianqing; Zhang, Pingxiang; Zhou, Lian

2017-11-01

Fe1.1Se0.5Te0.5 superconducting bulks were successfully synthesized by a high energy ball milling (HEBM) aided sintering technique. Two advantages of this new technique have been revealed compared with traditional solid state sintering method. One is greatly increased the density of sintered bulks. It is because the precursor powders with β-Fe(Se, Te) and δ-Fe(Se, Te) were obtained directly by the HEBM process and without formation of liquid Se (and Te), which could avoid the huge volume expansion. The other is the obvious decrease of sintering temperature and dwell time due to the effective shortened length of diffusion paths. The superconducting critical temperature Tc of 14.2 K in our sample is comparable with those in previous reports, and further optimization of chemical composition is on the way.

Comparison of optical transients during the picosecond laser pulse-induced crystallization of GeSbTe and AgInSbTe phase-change thin films: Nucleation-driven versus growth-driven processes

Energy Technology Data Exchange (ETDEWEB)

Liang, Guangfei [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Simian [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Huang, Huan [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Wang, Yang, E-mail: ywang@siom.ac.cn [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Lai, Tianshu, E-mail: stslts@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yat-Sen University, Guangzhou 510275 (China); Wu, Yiqun [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2013-09-01

Direct comparison of the real-time in-situ crystallization behavior of as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (GeSbTe) and Ag{sub 8}In{sub 14}Sb{sub 55}Te{sub 23} (AgInSbTe) phase-change thin films driven by picosecond laser pulses was performed by a time-resolved optical pump-probe technique with nanosecond resolution. Different optical transients showed various crystallization processes because of the dissimilar nucleation- and growth-dominated mechanisms of the two materials. The effects of laser pulse fluence, thermal conductive structure, and successive pulse irradiation on their crystallization dynamics were also discussed. A schematic was then established to describe the different crystallization processes beginning from the as-deposited amorphous state. The results may provide further insight into the phase-change mechanism under extra-non-equilibrium conditions and aid the development of ultrafast phase-change memory materials.

Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor

Directory of Open Access Journals (Sweden)

Kudrynskyi Z. R.

2012-12-01

Full Text Available The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunctions are photo¬sensitive in near and infrared spectral regions. This method opens up greate possibilities of producing heterostructures with a desired sensitivity band.

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

International Nuclear Information System (INIS)

Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

2004-01-01

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

Tellurium sulfates from reactions in oleum and sulfur trioxide: syntheses and crystal structures of TeO(SO{sub 4}), Te{sub 4}O{sub 3}(SO{sub 4}){sub 5}, and Te(S{sub 2}O{sub 7}){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Logemann, Christian; Bruns, Joern; Schindler, Lisa Verena; Zimmermann, Vanessa; Wickleder, Mathias S. [Carl von Ossietzky University of Oldenburg, Institute of Chemistry (Germany)

2015-04-15

The reaction of K{sub 2}TeO{sub 4} with fuming sulfuric acid (65 % SO{sub 3}) in sealed glass ampoules at 250 C led to colorless single crystals of TeO(SO{sub 4}) [triclinic, P anti 1, Z = 8, a = 819.89(3) pm, b = 836.95(4) pm, c = 1179.12(5) pm, α = 82.820(2) , β = 70.645(2) , γ = 81.897(2) , V = 753.11(6) x 10{sup 6} pm{sup 3}]. A horseshoe type [Te{sub 4}O{sub 3}] fragment is the basic motif in the layer structure of the compound. The [Te{sub 4}O{sub 3}] moieties are linked to infinite chains by further oxide ions. Monomeric [Te{sub 4}O{sub 3}] horseshoes are found in the crystal structure of Te{sub 4}O{sub 3}(SO{sub 4}){sub 5} [trigonal, P3{sub 2}21, Z = 3, a = 859.05(2) pm, c = 2230.66(7) pm, V = 1425.61(6) x 10{sup 6} pm{sup 3}], which was obtained from TeO{sub 2} and fuming sulfuric acid (65 % SO{sub 3}) at 200 C as colorless single crystals. By switching to neat SO{sub 3} as reaction medium colorless crystals of Te(S{sub 2}O{sub 7}){sub 2} [P2{sub 1}/n, Z = 4, a = 1065.25(3) pm, b = 818.50(2) pm, c = 1206.27(3) pm, β = 102.097(1) , V = 1028.40(5) x 10{sup 6} pm{sup 3}] form when ortho-telluric acid, H{sub 6}TeO{sub 6}, is used as the tellurium source. The compound was reported previously, however, obviously with a wrong crystallographic description. In the crystal structure the tellurium atoms are coordinated by two chelating disulfate ions. Further Te-O contacts link the [Te(S{sub 2}O{sub 7}){sub 2}] units to an extended network. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Detection of current-induced spin polarization in BiSbTeSe{sub 2} toplogical insulator

Energy Technology Data Exchange (ETDEWEB)

Yang, Fan; Ghatak, Subhamoy; Taskin, Alexey; Ando, Yoichi [Institute of Physics II, University of Cologne (Germany); Ando, Yuichiro [Department of Electronic Science and Engineering, Kyoto University (Japan)

2016-07-01

Topological insulators (TIs) are a class of quantum matter which possess spin-momentum-locked Dirac Fermions on the surfaces. Due to the spin-momentum locking, spin polarization will be induced when a charge current flows through the surface of a TI. Such spin polarization can be detected by using a ferromagnetic tunneling contact as a detector. In this talk, we present our results measured in devices fabricated from BiSbTeSe{sub 2} flakes. Spin signals were observed in both n-type and p-type BiSbTeSe{sub 2} samples.

Electrodeposition and characterization of CdSe x-Te 1- x semiconducting thin films

Science.gov (United States)

Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

1999-07-01

Thin polycrystalline films of cadmium chalcogenides CdSe xTe 1-x ( 0 ≤ x ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 °C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe xTe 1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

Ultrafast quasiparticle dynamics of FeTe0.75Se0.25 superconductor

Directory of Open Access Journals (Sweden)

Katagiri T.

2013-03-01

Full Text Available The electron-phonon coupling constant (λ≈0.45 obtained from femtosecond pump-probe reflection measurements suggests that a phonon-mediated process cannot be the dominant mechanism for superconductivity of FeTe0.75Se0.25.

Propriedades estruturais e térmicas de vidros teluretos 20Li2O-80TeO2 Structural and thermal properties of tellurite 20Li2O-80TeO2 glasses

Directory of Open Access Journals (Sweden)

E. Idalgo

2007-09-01

Full Text Available O presente trabalho reporta estudos sobre a cristalização em vidros teluretos 20Li2O-80TeO2 induzida a partir de tratamentos térmicos realizados sobre vidros com tamanho de partículas entre 38 µm e 75 µm. Estes estudos foram conduzidos em duas matrizes vítreas tratadas e não tratadas termicamente para aliviar as tensões após o quenching, utilizando-se de forma combinada às técnicas de difração de raios X, calorimetria diferencial de varredura e espectroscopia no infravermelho. Os resultados revelaram a presença de três fases cristalinas distintas durante o processo de cristalização e apontaram para uma hierarquia tal que as fases alfa-TeO2 e gama-TeO2 cristalizam-se antecipadamente à fase Li2Te2O5 no vidro 20Li2O-80TeO2 sujeito a tensões mecânicas induzidas durante a síntese. No vidro 20Li2O-80TeO2, livre de tensões mecânicas, não foi possível discriminar esta hierarquia de cristalização.This work report crystallization studies on tellurite 20Li2O-80TeO2 glasses induced from heat thermal annealing on glasses with particle size between 38 µm and 75 µm. These studies were conducted on two glass matrix heat thermal annealed and non-annealed to remove the stress after the quenching, by using the X-Ray diffraction analysis, Fourier transform infrared spectroscopy and differential scanning calorimetry techniques. The results shown the presence of three distinct crystalline alpha-TeO2, gamma-TeO2 and Li2Te2O5 phases during the crystallization process, suggesting a crystallization hierarchy on the glass matrix under stress, since the gamma-TeO2 and alpha-TeO2 phases crystallization occurs before the Li2Te2O5 phase. On the glass stress free, this crystallization hierarchy was not clearly determined.

Characterization of single crystalline ZnTe and ZnSe grown by vapor phase transport

Energy Technology Data Exchange (ETDEWEB)

Trigubo, A B; Di Stefano, M C [FRBA-UTN, (1179) Buenos Aires (Argentina); Aguirre, M H [Dpto de Quim Inorg, Fac de Cs Quim, Univ Complutense, (28040) Madrid (Spain); Martinez, A M; D' Elia, R; Canepa, H; Heredia, E, E-mail: atrigubo@citefa.gov.a [CINSO-CITEFA: (1603) Villa Martelli, Pcia de Buenos Aires (Argentina)

2009-05-01

Tubular furnaces were designed and built to obtain single crystalline ZnTe and ZnSe ingots using respectively physical and chemical transport methods. Different temperature profiles and growth rates were analyzed in order to optimize the necessary crystalline quality for device development. Optical and scanning electron micrographs of the corrosion figures produced by chemical etching were used to obtain the dislocation density and the misorientation between adjacent subgrains in ZnTe and ZnSe wafers. Structural quality of the single crystalline material was determined by transmission electronic microscopy. Optical transmittance was measured by infrared transmission spectrometry and the resulting values were compared to commercial samples.

Intermolecular and very strong intramolecular C-SeO/N chalcogen bonds in nitrophenyl selenocyanate crystals.

Science.gov (United States)

Wang, Hui; Liu, Ju; Wang, Weizhou

2018-02-14

Single-crystal X-ray diffraction reveals that polymorphic ortho-nitrophenyl selenocyanate (o-NSC, crystals 1a and 1b) and monomorphic para-nitrophenyl selenocyanate (p-NSC, crystal 2) crystals are all stabilized mainly by intermolecular and very strong intramolecular C-SeO/N chalcogen bonds, as well as by other different interactions. Thermogravimetric (TG) and differential scanning calorimetry thermogram (DSC) analyses show that the starting decomposition temperatures and melting points of the three crystals are different, following the order 1b > 1a > 2, which is consistent with the structural characteristics of the crystals. In addition, atoms in molecules (AIM) and natural bond orbital (NBO) analyses indicate that the total strengths of the C-SeO and C-SeN chalcogen bonds decrease in the order 1b > 1a > 2. This study could be significant for engineering functional crystals based on robust C-SeO and C-SeN chalcogen bonds, and for designing drugs containing selenium as well as understanding their interaction in biosystems.

Improvement of thermoelectric properties induced by uniquely ordered lattice field in Bi2Se0.5Te2.5 pillar array

International Nuclear Information System (INIS)

Tan, Ming; Hao, Yanming; Wang, Gangzhi

2014-01-01

In this study, it was found that uniquely ordered lattice field favors transport of carriers but hinder that of phonons. The n-Bi 2 Se 0.5 Te 2.5 pillar array film was successfully achieved by a simple ion beam assisted deposition technique. This oriented pillar array structure is clear with pillar diameter of about 30 nm, exhibiting a uniquely ordered lattice field. The properties of the ordered Bi 2 Se 0.5 Te 2.5 pillar array were greatly enhanced in comparison with those of the ordinary film. The Bi 2 Se 0.5 Te 2.5 pillar array with a thermoelectric dimensionless figure-of-merit ZT=1.28 was obtained at room temperature. The in-plane transport mechanisms of the ordered pillar array and the ordinary structures, lattice field model, are proposed and investigated. The specially ordered lattice field is the main reason for the properties enhancement observed in the Bi 2 Se 0.5 Te 2.5 film. Introduction of such ordered lattice field into TE films is therefore a very promising approach. - Graphical abstract: In this study, it was found that uniquely ordered lattice field favors transport of carriers but hinder that of phonons. The Bi 2 Se 0.5 Te 2.5 pillar array film with a thermoelectric dimensionless figure-of-merit ZT=1.28 was obtained at room temperature. The in-plane transport mechanisms of the ordered pillar array and the ordinary structures, the lattice field model, are proposed and investigated. The specially ordered lattice field is the main reason for the properties enhancement observed in the Bi 2 Se 0.5 Te 2.5 pillar array. Introduction of such uniquely ordered lattice field into TE films is therefore a very promising approach. In (a) TEM and (b) HRTEM images of the ordered Bi 2 Se 0.5 Te 2.5 column array. - Highlights: • Uniquely ordered Bi 2 Se 0.5 Te 2.5 pillar array was achieved by an IBAD method. • The pillar array with an ordered lattice field exhibits attractive TE property. • The transport mechanism of such ordered pillar array is proposed and

New semiconductor scintillators ZnSe(Te,O) and integrated radiation detectors based thereon

NARCIS (Netherlands)

Ryzhikov, [No Value; Starzhinskiy, N; Gal'chinetskii, L; Gashin, P; Kozin, D; Danshin, E

Data are presented on properties of a new type of scintillator based on isovalently doped crystals of zinc selenide. Depending upon concentration of activating dopants Te and O, the wavelength of the luminescence maximum is 590-640 nm, response time is 1-50 mus, and afterglow level after 5 ms is not

On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI3 and CuI

International Nuclear Information System (INIS)

Kulbachinskii, Vladimir A.; Kytin, Vladimir G.; Kudryashov, Alexey A.; Kuznetsov, Alexei N.; Shevelkov, Andrei V.

2012-01-01

The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI 3 or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering

Crystal structure, Raman scattering and magnetic properties of CuCr2-xZrxSe4 and CuCr2-xSnxSe4 selenospinels

Science.gov (United States)

Pinto, C.; Galdámez, A.; Barahona, P.; Moris, S.; Peña, O.

2018-06-01

Selenospinels, CuCr2-xMxSe4 (M = Zr and Sn), were synthesized via conventional solid-state reactions. The crystal structure of CuCr1.5Sn0.5Se4, CuCr1.7Sn0.3Se4, CuCr1.5Zr0.5Se4, and CuCr1.8Zr0.2Se4 were determined using single-crystal X-ray diffraction. All the phases crystallized in a cubic spinel-type structure. The chemical compositions of the single-crystals were examined using energy-dispersive X-ray analysis (EDS). Powder X-ray diffraction patterns of CuCr1.3Sn0.7Se4 and CuCr1.7Sn0.3Se4 were consistent with phases belonging to the Fd 3 bar m Space group. An analysis of the vibrational properties on the single-crystals was performed using Raman scattering measurements. The magnetic properties showed a spin glass behavior with increasing Sn content and ferromagnetic order for CuCr1.7Sn0.3Se4.

Syntheses, crystal structures, and characterization of two new Tl{sup +}-Cu{sup 2+}-Te{sup 6+} oxides: Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10}

Energy Technology Data Exchange (ETDEWEB)

Yeon, Jeongho; Kim, Sang-Hwan [Department of Chemistry, University of Houston, 136 Fleming Building, Houston, TX 77204-5003 (United States); Green, Mark A. [Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742-2115 and NIST Center for Neutron Research, National Institute of Standard and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-6103 (United States); Bhatti, Kanwal Preet; Leighton, C. [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455-0132 (United States); Shiv Halasyamani, P., E-mail: psh@uh.edu [Department of Chemistry, University of Houston, 136 Fleming Building, Houston, TX 77204-5003 (United States)

2012-12-15

Crystals and polycrystalline powders of two new oxide materials, Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10}, have been synthesized by hydrothermal and solid-state methods. The materials were structurally characterized by single-crystal X-ray diffraction. Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10} exhibit one dimensional anionic slabs of [CuTeO{sub 6}]{sup 4-} and [CuTe{sub 2}O{sub 10}]{sup 6-}, respectively. Common to both slabs is the occurrence of Cu{sup 2+}O{sub 4} distorted squares and Te{sup 6+}O{sub 6} octahedra. The slabs are separated by Tl{sup +} cations. For Tl{sub 4}CuTeO{sub 6}, magnetic measurements indicate a maximum at {approx}8 K in the temperature dependence of the susceptibility. Low temperature neutron diffraction data confirm no long-range magnetic ordering occurs and the susceptibility was adequately accounted for by fits to a Heisenberg alternating chain model. For Tl{sub 6}CuTe{sub 2}O{sub 10} on the other hand, magnetic measurements revealed paramagnetism with no evidence of long-range magnetic ordering. Infrared, UV-vis spectra, thermogravimetric, and differential thermal analyses are also reported. Crystal data: Tl{sub 4}CuTeO{sub 6}, Triclinic, space group P-1 (No. 2), a=5.8629(8) A, b=8.7848(11) A, c=9.2572(12) A, {alpha}=66.0460(10), {beta}=74.2010(10), {gamma}=79.254(2), V=417.70(9) A{sup 3}, and Z=2; Tl{sub 6}CuTe{sub 2}O{sub 10}, orthorhombic, space group Pnma (No. 62), a=10.8628(6) A, b=11.4962(7) A, c=10.7238(6) A, V=1339.20(13) A{sup 3}, and Z=4. - Graphical Abstract: Two new oxide materials, Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10}, have been synthesized and characterized. The materials exhibit one dimensional crystal structures consisting of CuO{sub 4} and TeO{sub 6} polyhedra. Highlights: Black-Right-Pointing-Pointer Two New Tl-Te-Cu-oxides have been synthesized and structurally characterized. Black-Right-Pointing-Pointer For Tl{sub 4}CuTeO{sub 6}, magnetic measurements indicate a

Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3})

Energy Technology Data Exchange (ETDEWEB)

Meng, Chang-Yu; Wei, Ming-Fang [Department of Chemistry and Materials, Yulin Normal University,Yulin, Guangxi 537000 (China); Geng, Lei, E-mail: lgeng.cn@gmail.com [Department of Materials Science and Engineering, Huaibei Normal University, Huaibei, Anhui 235000 (China); Hu, Pei-Qing; Yu, Meng-Xia [Department of Chemistry and Materials, Yulin Normal University,Yulin, Guangxi 537000 (China); Cheng, Wen-Dan [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2016-07-15

Two new bismuth(III) selenite/tellurite nitrates, [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV–vis–NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P2{sub 1}/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetric building units, exhibit two different types of structures. The structure of [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}] {sup 3}{sub ∞} with NO{sub 3}{sup −} anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO{sub 3})](NO{sub 3}) features 2D bismuth(III) tellurite [Bi(TeO{sub 3}){sub 2}]{sup 2}{sub ∞} layers separated by NO{sub 3}{sup −} anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors. - Graphical abstract: Two novel bismuth{sup III} selenite/tellurite nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) with 3D tunnel structure and [Bi(TeO{sub 3})](NO{sub 3}) with 2D layer structure have been firstly synthesized and characterized. Display Omitted - Highlights: • Two novel bismuth{sup III} nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}) were firstly

Ion implantation of CdTe single crystals

International Nuclear Information System (INIS)

Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

2017-01-01

Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

Batch and column adsorption behaviors of Se(IV) and Te(IV) on organic and inorganic ion exchangers from HCl solutions

Energy Technology Data Exchange (ETDEWEB)

El-Sweify, Fatma H.; Abdel-Fattah, Alaa El-Din A.; Aly, Shorouk M.; Ghamry, Mohamed A. [Atomic Energy Authority, Cairo (Egypt). Hot Laboratories Center; El-Sheikh, Ragaa [Zagazig Univ. (Egypt). Chemistry Dept.

2017-07-01

Adsorption behaviors of Se(IV) and Te(IV) on the inorganic ion exchanger ceric tungstate (CeW) was studied under static and dynamic conditions and compared with the adsorption on the organic cation and anion exchangers Dowex-50X8 and AG-2X8, respectively. The radioactive isotopes {sup 75}Se and {sup 123m}Te were used to trace the respective elements. Some parameters affecting the adsorption were investigated under static conditions. In the case of batch technique the adsorption was studied from slightly acidic HCl as well as slightly alkaline media, i.e. at two pH-ranges. Se(IV) and Te(IV) were adsorbed on both the inorganic ion exchanger (CeW) and on AG-2X8, from slightly alkaline solutions. From the similarity of adsorption on both ion exchangers it was clear that (CeW) acts as an anion exchanger. Moreover, the obtained K{sub d}-values for the adsorption on (CeW) were much higher than those for the adsorption on the organic anion exchanger AG-2X8. Se(IV) was not adsorbed on Dowex-50X8 all over the studied pH-range whereas Te(IV) was slightly adsorbed. Loading and elution behaviors of Se(IV) and Te(IV) on columns of AG-2X8 and (CeW) were studied using solutions of HCl of different concentrations. Some good separation alternatives of Se(IV) and Te(IV) under certain conditions were achieved.

Physicochemical properties of new As2Se3–Ag4SSe–CdTe glasses

International Nuclear Information System (INIS)

Aljihmani, Lilia; Vassilev, Venceslav; Hristova-Vasileva, Temenuga; Fidancevska, Emilija

2009-01-01

Chalcogenide glasses from the As 2 Se 3 –Ag 4 SSe–CdTe system were synthesized. The basic physicochemical parameters such as density (d), microhardness (HV) and the temperatures glass transition Tg were measured. Compactness (C) and some thermomechanical characteristics such as volume (Vh) and formation energy (Eh) of micro-voids in the glassy network, as well as the module of elasticity (E) were calculated. A correlation between the composition and properties of the As 2 Se 3 –Ag 4 SSe–CdTe glasses was established and comprehensively discussed. Keywords: chalcogenide glasses, density, microhardness, compactness, elasticity modulus, thermomechanical characteristics

Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

International Nuclear Information System (INIS)

Andrikopoulos, K S; Yannopoulos, S N; Voyiatzis, G A; Kolobov, A V; Ribes, M; Tominaga, J

2006-01-01

We report on an inelastic (Raman) light scattering study of the local structure of amorphous GeTe (a-GeTe) films. A detailed analysis of the temperature-reduced Raman spectra has shown that appreciable structural changes occur as a function of temperature. These changes involve modifications of atomic arrangements such as to facilitate the rapid amorphous to crystal transformation, which is the major advantage of phase-change materials used in optical data storage media. A particular structural model, supported by polarization analysis, is proposed which is compatible with the experimental data as regards both the structure of a-GeTe and the crystallization transition. The remarkable difference between the Raman spectrum of the crystal and the glass can thus naturally be accounted for

Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate

International Nuclear Information System (INIS)

Park, Y.M.; Andre, R.; Kasprzak, J.; Dang, Le Si; Bellet-Amalric, E.

2007-01-01

We have grown zinc-blende cadmium selenide (CdSe) epilayers on ZnTe-(0 0 1) substrate by molecular beam epitaxy (MBE). By controlling the substrate temperature and beam-equivalent pressure (BEP) ratio, of Se to Cd, we determined the most suitable growth condition based on reflection high-energy electron diffraction (RHEED) pattern. At a substrate temperature of 280 deg. C and a BEP ratio of 3.6, the RHEED pattern showed a V-like feature, indicating a rough surface with facets. As the substrate temperature was increased to 360 deg. C at the same BEP ratio, a V-like RHEED pattern moved to a clear streaky pattern. Moreover when the BEP ratio was increased to 4.8 at 360 deg. C of substrate temperature, a clear (2 x 1) reconstruction of the CdSe layer was observed. A CdSe/CdMgSe single quantum well structure was also grown on ZnTe-(0 0 1) substrate by MBE. The RHEED pattern showed a clear (2 x 1) surface reconstruction during the growth. By photoluminescence measurement, a good optical property of the structure was obtained

Optical properties of Sb(Se,Te)I and photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Tablero, C., E-mail: ctablero@etsit.upm.es

2016-09-05

SbXI (X = Se, Te) are ferroelectric semiconductors that allow a variety of applications including optoelectronic and photovoltaic applications. An analysis of the optical properties is carried out starting from first-principles density-functional theory with orbital-dependent one-electron potentials. To go into the contributions to the optical properties more deeply, the absorption coefficients have been split into inter- and intra-species contributions and into atomic angular momentum contributions. The optical results are used to evaluate the efficiencies when this material is used to absorb sunlight at several sunlight concentrations and the usual radiative and the ferroelectric photovoltaic mechanisms. The results indicate their applicability in photovoltaic devices as absorbent of the solar spectrum with high conversion efficiency. - Highlights: • The SbXI (X = Se, Te) are ferroelectric semiconductors with a high optical absorption. • The absorption coefficients have been split into different contributions to understand the cause of the high absorption. • Using the first-principles results the maximum efficiency of this photovoltaic absorber material has been estimated. • The efficiency of this compound is near the maximum efficiency for single-gap solar cells even using small-width devices. • The coexistence of the R-PV and R-PV effects has been evaluated.

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

International Nuclear Information System (INIS)

Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

2013-01-01

Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

Facile synthesis of red- to near-infrared-emitting CdTe{sub x}Se{sub 1-x} alloyed quantum dots via a noninjection one-pot route

Energy Technology Data Exchange (ETDEWEB)

Liao Lifang; Zhang Hua [Key Laboratory for Advanced Materials, Department of Chemistry, East China University of Science and Technology, Shanghai 200237 (China); Zhong Xinhua, E-mail: zhongxh@ecust.edu.c [Key Laboratory for Advanced Materials, Department of Chemistry, East China University of Science and Technology, Shanghai 200237 (China)

2011-02-15

High-quality CdTeSe colloidal nanocrystals with gradient distribution of components, consisting of Te-rich inner cores and Se-rich outer shells, were synthesized in a 'green' solvent paraffin via a noninjection one-pot approach with the use of cadmium oxide (CdO), elemental tellurium, and elemental selenium as Cd, Te, and Se sources, respectively. All of these reactants were loaded at room temperature. This features synthetic reproducibility and large-scale capability. The bandgap engineering of the obtained CdTeSe QDs can be conveniently realized through the variation of growth temperature. Red- to near-infrared-emitting (620-780 nm) QDs with nearly identical particle sizes can be obtained when the reaction temperature was changed from 180 to 280 {sup o}C with the fixation of precursor feed ratio at 5Cd-0.5Te-0.5Se. The as-prepared CdTeSe QDs exhibit PL QY as high as 53%. The resulting CdTeSe QDs were characterized by UV-vis and photoluminescence spectroscopy, powder X-ray diffraction, transmission electron microscopy, and inductively coupled plasma atomic emission spectroscopy.

High temperature luminescence of ZnSe:Yb crystals

Directory of Open Access Journals (Sweden)

Makhniy V. P.

2016-05-01

Full Text Available The problem of obtaining of effective edge luminescence with high temperature stability in the zinc selenide crystals is discussed. This task is solved by using as the dopant rare-earth element yttrium, which is introduced into the undoped ZnSe crystal by diffusion method. Doping was carried out in an evacuated to 10 -4 Torr. and a sealed quartz ampoule, in the opposite ends of which is a sample and a mixture of the crushed Yb and Se. It has been found that the diffusion coefficient of yttrium at a temperature of 1400 K is about 5⋅10 -7 cm 2/sec. It is shown that in the luminescence spectra of ZnSe:Yb samples in the temperature range 295-470 K only blue band is observed. Dependencies of parameters of this band from the excitation level are typical for the annihilation of excitons at their inelastic scattering by free carriers. The efficacy of blue radiation at 300 K is about 30% and does not fall more than twice with increasing temperature up to 470 K, indicating its high thermal stability.

Tritellurides of comples cations: Synthesis and crystal structure of (Ba(en)/sub 3/)Te/sub 3/ and (Ba(en)/sub 4,5/)Te/sub 3/

Energy Technology Data Exchange (ETDEWEB)

Zagler, R; Eisenmann, B; Schaefer, H

1987-02-01

The two title compounds have been prepared by reaction of appropriate mixtures of the elements in ethylenediamine. The structures have been determined on the basis of single crystal data. (Ba(en)/sub 3/Te/sub 3/ crystallizes in the monoclinic system, space group P2/sub 1/c with a = 918.0(4), b = 1203.7(6), c = 1639,9(6) pm, ..beta.. = 93.4(1)/sup 0/. In the structure there are bent tritelluride anions Te/sub 3//sup 2 -/ (bond lengths 273,9-278,5 pm, bond angle (105.7/sup 0/). The Ba/sup 2 +/ cations are six coordinate by the bidentate ligand ethylenediamine. (Ba(en)/sub 4,5/)Te/sub 3/ crystallizes in the monoclinic system, space group Cc with a = 1752.8(6), b = 938.9(4), c = 3041.7(8) pm, ..beta.. = 91.3(1)/sup 0/. In this structure the bond lengths in the TE/sub 3//sup 2 -/ anions are shorter (272.1-273.1 pm, bond angles 110.9-112.2/sup 0/). The cations are coordinated by four bidentate ligands, and are connected into pairs by a further ethylenediamine molecule. The resulting dinuclear (Ba(en)/sub 4/)en(Ba(en)/sub 4/)/sup 4 +/ units have the Ba/sup 2 +/ cations in CN 9.

Millimeter wave absorption by confined acoustic modes in CdSe/CdTe core-shell quantum dots

International Nuclear Information System (INIS)

Liu, T-M; Lu, J-Y; Kuo, C-C; Wen, Y-C; Lai, C-W; Yang, M-J; Chou, P-T; Murray, D B; Saviot, L; Sun, C-Kuang

2007-01-01

Taking advantage of the specific core-shell charge separation structure in the CdSe/CdTe core-shell Type-II quantum dots (QDs), we experimentally observed the resonant-enhanced dipolar interaction between millimeter-wave (MMW) photons and their corresponding (l = 1) confined acoustic phonons. With proper choice of size, the absorption band can be tuned to desired frequency of MMW imaging. Exploiting this characteristic absorption, in a fiber-scanned MMW imaging system, we demonstrated the feasibility of CdSe/CdTe QDs as the contrast agents of MMW imaging

Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure

OpenAIRE

Zhao, Yanfei; Chang, Cui-Zu; Jiang, Ying; DaSilva, Ashley; Sun, Yi; Wang, Huichao; Xing, Ying; Wang, Yong; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Jian

2013-01-01

In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (MBE). In situ angle-resolved photoemission spectroscopy (ARPES) provides direct evidence that the su...

Weak Antilocalization in Bi 2 (Se x Te 1– x ) 3 Nanoribbons and Nanoplates

KAUST Repository

Cha, Judy J.; Kong, Desheng; Hong, Seung-Sae; Analytis, James G.; Lai, Keji; Cui, Yi

2012-01-01

Studying the surface states of Bi 2Se 3 and Bi 2Te 3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi 2(Se xTe 1-x) 3 may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi 2(Se xTe 1-x) 3 nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi 2Se 3 to Bi 2Te 3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (∼10 19 cm -3) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives α of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is ∼T -0.49 within the appropriate field range (∼0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other. © 2012 American Chemical Society.

Weak Antilocalization in Bi 2 (Se x Te 1– x ) 3 Nanoribbons and Nanoplates

KAUST Repository

Cha, Judy J.

2012-02-08

Studying the surface states of Bi 2Se 3 and Bi 2Te 3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi 2(Se xTe 1-x) 3 may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi 2(Se xTe 1-x) 3 nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi 2Se 3 to Bi 2Te 3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (∼10 19 cm -3) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives α of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is ∼T -0.49 within the appropriate field range (∼0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other. © 2012 American Chemical Society.

Ab initio calculations of half-metallic ferromagnetism in Cr-doped MgSe and MgTe semiconductors

Energy Technology Data Exchange (ETDEWEB)

Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Sohaib, M.U. [Lahore Development Authority, 54590 Lahore (Pakistan); Ghulam Abbas, S.M. [Department of Chemistry, University of Agriculture, Faisalabad 38040 (Pakistan); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

2015-01-15

The full-potential linear-augmented-plane-waves plus local-orbitals (FP-LAPW+lo) method has been employed for investigation of half-metallic ferromagnetism in Cr-doped ordered zinc-blende MgSe and MgTe semiconductors. Calculations of exchange and correlation (XC) effects have been carried out using generalized gradient approximation (GGA) and orbital independent modified Becke–Johnson potential coupled with local (spin) density approximation (mBJLDA). The thermodynamic stability of the compounds and their preferred magnetic orders have been analyzed in terms of the heat of formation and minimum total energy difference in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering, respectively. Calculated electronic properties reveal that the Cr-doping induces ferromagnetism in MgSe and MgTe which gives rise to a half-metallic (HM) gap at Fermi level (E{sub F}). Further, the electronic band structure is discussed in terms of s (p)–d exchange constants that are consistent with typical magneto-optical experiment and the behavior of charge spin densities is presented for understanding the bonding nature. Our results demonstrate that the higher effective potential for the spin-down case is responsible for p–d exchange splitting. Total magnetic moment (mainly due to Cr-d states) of these compounds is 4µ{sub B}. Importantly, the electronic properties and HM gap obtained using mBJLDA show remarkable improvement as compared to the results obtained using standard GGA functional. - Highlights: • Spin effect theoretical study on Cr-doped MgSe and MgTe is performed. • Half-metallic ferromagnetism in Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te is established. • Results of WC-GGA and mBJLDA are compared for performance. • HM gaps for Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te show nonlinear variation with x. • Important values of exchange splitting/constants and moments are reported.

Size-selective precipitation in colloidal semiconductor nanocrystals of CdTe and CdSe: a study by UV-VIS spectroscopy; Precipitacao seletiva de tamanhos em nanoparticulas semicondutoras coloidais de CdTe e CdSe: um estudo por espectroscopia UV-VIS

Energy Technology Data Exchange (ETDEWEB)

Viol, Livia Cristina de Souza; Silva, Fernanda Oliveira; Ferreira, Diego Lourenconi; Alves, Jose Luiz Aarestrup; Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.b [Universidade Federal de Sao Joao del Rei, MG (Brazil). Dept. de Ciencias Naturais

2011-07-01

The post-preparative size-selective precipitation technique was applied in CdTe and CdSe semiconductor nanocrystals prepared via colloidal route in water. The synthesis of CdTe and CdSe nanoparticles and the effect of the post-preparative size-selective precipitation have been characterized mainly by mean of ultraviolet and visible absorption spectroscopy (UV-Vis). It was demonstrated that the size-selective precipitation are able to isolate particles of different sizes and purify the nanoparticles as well. (author)

Anisotropic Transport and Magnetic Properties of Charge-Density-Wave Materials RSeTe_2 (R = La, Ce, Pr, Nd)

International Nuclear Information System (INIS)

Wang Pei-Pei; Long Yu-Jia; Zhao Ling-Xiao; Chen Dong; Xue Mian-Qi; Chen Gen-Fu

2015-01-01

Single crystals of RSeTe_2 (R = La, Ce, Pr, Nd) are synthesized using LiCl/RbCl flux. Transport and magnetic properties in the directions parallel and perpendicular to the a–c plane are investigated. We find that the resistivity anisotropy ρ_⊥/ρ_‖ lies in the range 486–615 for different compounds at 2 K, indicating the highly two-dimensional character. In both the orientations, the charge-density-wave transitions start near T_C_D_W = 284(3) K, 316(3) K, 359(3) K for NdSeTe_2, PrSeTe_2, CeSeTe_2, respectively, with a considerable increase in dc resistivity. While for LaSeTe_2, no obvious resistivity anomaly is observed up to 380 K. The value of T_C_D_W increases monotonically with the increasing lattice parameters. Below T_C_D_W, slight anomalies can be observed in NdSeTe_2, PrSeTe_2 and CeSeTe_2 with onset temperature at 193(3) K, 161(3) K, 108(3) K, respectively, decreasing as lattice parameters increase. Magnetic susceptibility measurements show that the valence state of rare earth ions are trivalence in these compounds. Antiferromagnetic-type magnetic order is formed in CeSeTe_2 at 2.1 K, while no magnetic transition is observed in PrSeTe_2 and NdSeTe_2 down to 1.8 K. (paper)

Anisotropy of hopping conductivity in TIGaSe2, crystal

International Nuclear Information System (INIS)

Nadjafov, A.I.; Sardarli, R.M.; Samedov, O. A.; Abdullayev, A.P.; Zeynalova, E.A.; Jabbarov, J.H.

2005-01-01

Full Text: The temperature dependences of electrical conductivity of a chained semiconductor crystal TIGaTe 2 in a direction of chains and perpendicularly have been investigated. It was established that in a constant electrical field in both crystallographic directions took place hopping conductivity with variable length of a jump on located near Fermi level. The energy activation of conductivity has been determined. It was appreciated density of a condition in a vicinity of a Fermi level, their disorder, radius of localization, average distance of jumps of carriers

Cubic Crystal-Structured SnTe for Superior Li- and Na-Ion Battery Anodes.

Science.gov (United States)

Park, Ah-Ram; Park, Cheol-Min

2017-06-27

A cubic crystal-structured Sn-based compound, SnTe, was easily synthesized using a solid-state synthetic process to produce a better rechargeable battery, and its possible application as a Sn-based high-capacity anode material for Li-ion batteries (LIBs) and Na-ion batteries (NIBs) was investigated. The electrochemically driven phase change mechanisms of the SnTe electrodes during Li and Na insertion/extraction were thoroughly examined utilizing various ex situ analytical techniques. During Li insertion, SnTe was converted to Li 4.25 Sn and Li 2 Te; meanwhile, during Na insertion, SnTe experienced a sequential topotactic transition to Na x SnTe (x ≤ 1.5) and conversion to Na 3.75 Sn and Na 2 Te, which recombined into the original SnTe phase after full Li and Na extraction. The distinctive phase change mechanisms provided remarkable electrochemical Li- and Na-ion storage performances, such as large reversible capacities with high Coulombic efficiencies and stable cyclabilities with fast C-rate characteristics, by preparing amorphous-C-decorated nanostructured SnTe-based composites. Therefore, SnTe, with its interesting phase change mechanisms, will be a promising alternative for the oncoming generation of anode materials for LIBs and NIBs.

Crystal structure and transport properties of Pd5HgSe

Czech Academy of Sciences Publication Activity Database

Laufek, F.; Vymazalová, A.; Drábek, M.; Navrátil, Jiří; Plecháček, T.; Drahokoupil, Jan

2012-01-01

Roč. 14, č. 10 (2012), s. 1476-1479 ISSN 1293-2558 R&D Projects: GA ČR GAP108/10/1315 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : Pd5HgSe * Pd-Hg-Se system * crystal structure Subject RIV: CA - Inorganic Chemistry Impact factor: 1.671, year: 2012

Crystallization kinetics of a-Se, part 4: thin films

Science.gov (United States)

Svoboda, Roman; Gutwirth, Jan; Málek, Jiří

2014-09-01

Differential scanning calorimetry was used to study the crystallization behaviour of selenium thin films in dependence on film thickness and deposition rate. In the current work, which is the fourth in a sequence of articles dealing with crystallization kinetics of a-Se, the non-isothermal crystallization kinetics was described in terms of the Johnson-Mehl-Avrami nucleation-growth model. Two-dimensional crystallite growth, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. It was found that neither the film thickness (tested within the 100-2350 nm range) nor the deposition rate appears to have any significant influence on the crystallization kinetics. However, the higher amount of intrinsic defects possibly produced by a higher deposition rate seems to accelerate the crystallization, shifting it towards lower temperatures. Very good correlation between the results obtained for thin films and those for fine powders was found. Based on the obtained results, interpretations of relevant literature data were made.

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

International Nuclear Information System (INIS)

Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

2008-01-01

CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

Enhancing the blue shift of SHG signal in GaSe:B/Ce crystal

Science.gov (United States)

Karatay, Ahmet; Yuksek, Mustafa; Ertap, Hüseyin; Elmali, Ayhan; Karabulut, Mevlut

2018-02-01

The influence of Ce3+ on the wavelength of second harmonic generation (SHG) signal in boron doped GaSe crystals have been investigated. We found that by substitution of Ce3+ with B3+, SHG signal shifted to lower wavelength. In addition, the nonlinear absorption (NA) properties and ultrafast dynamics of pure, 1 at.% B3+ and 0.5 at.% B3++ 0.5 at.% Ce3+ doped GaSe crystals have been studied by open aperture Z-scan and ultrafast pump probe spectroscopy techniques. From the open aperture Z-scan experiments we observed that all of the crystals showed nonlinear absorption (NA). However, pump-probe experiments revealed that when GaSe crystal is doped, the NA signal turns into a bleaching signal with different lifetimes depending on the type and concentration of the dopant atoms.

CdTe and CdSe quantum dots: synthesis, characterizations and applications in agriculture

International Nuclear Information System (INIS)

Ung, Thi Dieu Thuy; Tran, Thi Kim Chi; Pham, Thu Nga; Nguyen, Quang Liem; Nguyen, Duc Nghia; Dinh, Duy Khang

2012-01-01

This paper highlights the results of the whole work including the synthesis of highly luminescent quantum dots (QDs), characterizations and testing applications of them in different kinds of sensors. Concretely, it presents: (i) the successful synthesis of colloidal CdTe and CdSe QDs, their core/shell structures with single- and/or double-shell made by CdS, ZnS or ZnSe/ZnS; (ii) morphology, structural and optical characterizations of the synthesized QDs; and (iii) testing examples of QDs as the fluorescence labels for agricultural-bio-medical objects (for tracing residual pesticide in agricultural products, residual clenbuterol in meat/milk and for detection of H5N1 avian influenza virus in breeding farms). Overall, the results show that the synthesized QDs have very good crystallinity, spherical shape and strongly emit at the desired wavelengths between ∼500 and 700 nm with the luminescence quantum yield (LQY) of 30–85%. These synthesized QDs were used in fabrication of the three testing fluorescence QD-based sensors for the detection of residual pesticides, clenbuterol and H5N1 avian influenza virus. The specific detection of parathion methyl (PM) pesticide at a content as low as 0.05 ppm has been realized with the biosensors made from CdTe/CdS and CdSe/ZnSe/ZnS QDs and the acetylcholinesterase (AChE) enzymes. Fluorescence resonance energy transfer (FRET)-based nanosensors using CdTe/CdS QDs conjugated with 2-amino-8-naphthol-6-sulfonic acid were fabricated that enable detection of diazotized clenbuterol at a content as low as 10 pg ml −1 . For detection of H5N1 avian influenza virus, fluorescence biosensors using CdTe/CdS QDs bound on the surface of chromatophores extracted and purified from bacteria Rhodospirillum rubrum were prepared and characterized. The specific detection of H5N1 avian influenza virus in the range of 3–50 ng μl −1 with a detection limit of 3 ng μL −1 has been performed based on the antibody-antigen recognition. (review)

Isotopic equilibrium constants of the deuterium exchange between HDO and H2S, H2Se and H2Te

International Nuclear Information System (INIS)

Marx, D.

1959-11-01

We have determined experimentally the equilibrium constant K of each of the following isotope exchanges: SH 2 + OHD ↔ SHD + OH 2 ; SeH 2 + OHD ↔ SeHD + OH 2 ; TeH 2 + OHD ↔ TeHD + OH 2 . In gaseous phase, statistical thermodynamics leads to the expression: K (Z OHD x Z RH 2 )/(Z OH 2 x Z RHD ) x e W/T (R being the elements S, Se or Te). Z, the partition functions, have been calculated and, through our experimental results, the constant W has been determined. Having obtained W, the equilibrium constant K has been calculated for a series of temperatures. (author) [fr

Growth and characterization of indium-doped Cd1−xZnxTe crystal by traveling heater method

International Nuclear Information System (INIS)

Wei, Gaoli; Wang, Linjun; Zhang, Jijun; Yuan, Zhenwen; Qin, Kaifeng; Min, Jiahua; Liang, Xiaoyan; Xia, Yiben

2013-01-01

An indium-doped detector grade Cd 0.9 Zn 0.1 Te crystal was grown by the THM technique from Te-rich solution. The as-grown crystal showed the dark resistivity of (1–3)×10 10 Ω cm. Through IR transmission microscopy Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 μm and the concentration was ∼10 5 cm −3 . The impurity concentrations were greatly reduced for the THM grown CZT, as compared to the Bridgman method grown CZT. A resolution of 8.5% was achieved under the 662 keV 137 Cs gamma ray radiation at room temperature for the as-grown CZT samples. -- Highlights: ► Detector grade Cd 1−x Zn x Te has been successfully grown by the THM technique. ► The as-grown CZT has a resistivity of ∼10 10 Ω cm. ► Te inclusions' size and concentration were comparable to the commercial CZT. ► A resolution of 8.5% was achieved for the 137 Cs 662 keVgamma line

Non-isothermal crystallization kinetics of As{sub 30}Te{sub 60}Ga{sub 10} glass

Energy Technology Data Exchange (ETDEWEB)

Mohamed, Mansour; Abd-Elnaiem, Alaa M.; Abdel-Rahim, M.A.; Hafiz, M.M. [Assiut University, Physics Department, Faculty of Science, Assiut (Egypt); Hassan, R.M. [Assiut University, Physics Department, Faculty of Science, Assiut (Egypt); Aden University, Physics Department, Faculty of Education-Zingiber, Aden (Yemen)

2017-08-15

The crystallization study under non-isothermal conditions of As{sub 30}Te{sub 60}Ga{sub 10} glass was investigated. The studied composition was synthesized by melt-quenching technique and characterized by different techniques such as X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The XRD analysis revealed that the as-prepared and annealed bulk glass of As{sub 30}Te{sub 60}Ga{sub 10} exhibit the amorphous, and polycrystalline nature, respectively. The DSC results showed that the heating rate affects the characteristic temperatures, for instance, the glass transition, onset, and peak crystallization temperatures. Furthermore, some thermal analysis methods such as the Kissinger and Matusita et al., approximations were employed to determine the crystallization parameters: for example Avrami exponent and the activation energies for glass transition and crystallization process. In addition, we have compared the experimental DSC data with the calculated ones based on the Johnson-Mehl-Avrami (JMA) and Sestak-Berggren SB(M,N) models. The results indicated that the SB(M,N) model is more suitable for describing the non-isothermal crystallization kinetics of the investigated composition. (orig.)

Heavy doping of CdTe single crystals by Cr ion implantation

Science.gov (United States)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

Science.gov (United States)

Su, Ching-Hua

2014-01-01

A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

Effect of vacancies on the structure and properties of Ga{sub 2}(Se{sub 0.33}Te{sub 0.67}){sub 3}

Energy Technology Data Exchange (ETDEWEB)

Abdul-Jabbar, N. M. [Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Forrest, T. R. [European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex (France); Department of Physics, University of California, Berkeley, California 94720 (United States); Gronsky, R. [Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Bourret-Courchesne, E. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Wirth, B. D. [Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States); Department of Nuclear Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

2015-08-28

Ga{sub 2}(Se{sub 0.33}Te{sub 0.67}){sub 3} belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga{sub 2}(Se{sub 0.33}Te{sub 0.67}){sub 3} structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga{sub 2}(Se{sub 0.33}Te{sub 0.67}){sub 3} is highly dependent on thermal annealing. It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga{sub 2}(Se{sub 0.33}Te{sub 0.67}){sub 3} (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga{sub 2}(Se{sub 0.33}Te{sub 0.67}){sub 3} material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga{sub 2}(Se{sub 0.33}Te{sub 0.67}){sub 3} band gap redshifts by ≈0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means, such as doping.

Order–disorder phenomena in layered CuCrSe2 crystals

International Nuclear Information System (INIS)

Gagor, A.; Gnida, D.; Pietraszko, A.

2014-01-01

The thermal motion of Cu + ions in a quasi-two dimensional copper ion conductor CuCrSe 2 is studied in the vicinity of the order-disorder phase transition to superionic phase, basing on a single-crystal and powder X-ray diffraction, specific heat and electrical resistivity measurements. The copper ions gradually migrate with temperature decrease to empty tetrahedral sites reaching occupancy equilibrium in the disordered high-temperature phase at T s  = 365 K. The copper migration between Cuα and Cuβ tetrahedral sites occurs through the neighboring, face-sharing octahedral holes. Disorder of Cu + ions brings perturbations in periodic potential of the crystal lattice providing additional scattering centers for electrons. - Graphical abstract: Copper migration within α and β sites. - Highlights: • Single crystals of CuCrSe 2 have been grown by vapor transport. • Thermally activated motion of Cu + ions is analyzed from T = 295 up to 420 K. • An order–disorder phase transition at T s  = 365 K leads to fast ion conducting state. • Interplay between lattice vibrations and Se polarizability accounts for Cu + hops. • Electrical resistivity near the T s shows two additional scattering centers

The Structural, Dielectric, Lattice Dynamical and Thermodynamic Properties of Zinc-Blende CdX (X=S, Se, Te) from First-Principles Analysis

International Nuclear Information System (INIS)

Feng Shi-Quan; Li Jun-Yu; Cheng Xin-Lu

2015-01-01

The structural, dielectric, lattice dynamical and thermodynamic properties of zinc-blende CdX (X=S, Se, Te) are studied by using a plane-wave pseudopotential method within the density-functional theory. Our calculated lattice constants and bulk modulus are compared with the published experimental and theoretical data. In addition, the Born effective charges, electronic dielectric tensors, phonon frequencies, and longitudinal optical-transverse optical splitting are calculated by the linear-response approach. Some of the characteristics of the phonon-dispersion curves for zinc-blende CdX (X=S, Se, Te) are summarized. What is more, based on the lattice dynamical properties, we investigate the thermodynamic properties of CdX (X=S, Se, Te) and analyze the temperature dependences of the Helmholtz free energy F, the internal energy E, the entropy S and the constant-volume specific heat C_v. The results show that the heat capacities for CdTe, CdSe, and CdS approach approximately to the Petit-Dulong limit 6R. (paper)

Magneto-optical imaging of polycrystalline FeTe1-xSex prepared at various conditions

International Nuclear Information System (INIS)

Ding, Q.; Taen, T.; Mohan, S.; Nakajima, Y.; Tamegai, T.

2011-01-01

High-quality FeTe 1-x Se x polycrystals with T c ∼ 14 K were prepared by sintering at different temperatures. Intragranular critical current density of FeTe 1-x Se x polycrystals estimated from M-H curve is 5 x 10 4 A/cm 2 at 5 K under zero field. The observed intragranular J c value was confirmed by the magneto-optical images in the remanent state. The weak-link feature of FeTe 1-x Se x polycrystals is also revealed through magneto-optical imaging. We have prepared high-quality polycrystalline FeTe 1-x Se x by sintering at different temperatures and characterized their structural and magnetic properties with X-ray diffraction, magnetization measurements, and magneto-optical imaging. The intragranular J c was estimated to be 5 x 10 4 A/cm 2 , which is smaller than the single crystal, but still in the range for practical applications.

Structure and optical properties of GaSe-CdSe composites driven by Cd intercalation in GaSe lamellar crystals

International Nuclear Information System (INIS)

Caraman, Iuliana; Kantser, Valeriu; Evtodiev, Igor; Untila, Dumitru; Dmitroglo, Liliana; Leontie, Liviu; Arzumanyan, Grigory

2015-01-01

A new composite material composed of GaSe and CdSe has been obtained by treatment of GaSe single-crystal lamellas in Cd vapors at temperatures of 773-853 K and intercalation of Cd interlayers. The structure and optical properties of the GaSe-CdSe composite material have been studied. The content of CdSe crystallites was found to grow with increasing treatment temperature or with increasing duration of treatment at a constant temperature. Analysis of XRD, PL, XPS, AFM, and Raman patterns has shown that the heterogeneous composite composed of micro and nanocrystallites of CdSe in GaSe can be obtained by Cd intercalation in a temperature range of 753-853 K. On the basis of Raman spectrum, the vibrational modes of the composite have been identified. The PL of these materials contains emission bands of free and bound excitons, donor-acceptor bands, and bands of recombination via impurity levels. The PL emission spectra measured at a temperature of 78 and 300 K for the composites result from the overlapping of the emission bands of the components of GaSe doped with Cd and the CdSe crystallites. (authors)

Ab-initio study of pure sup 7 sup 7 Se and sup 1 sup 2 sup 5 Te systems and of the sup 7 sup 7 Se nuclear quadrupole interaction in tellurium

CERN Document Server

Oh, Y K; Cho, H S

1999-01-01

Using the Hartree-Fock cluster procedure, we have studied the electric-field gradient tensors at the nuclear sites of sup 7 sup 7 Se and sup 1 sup 2 sup 5 Te in pure sup 1 sup 2 sup 5 Te systems and in tellurium crystalline system's with a sup 7 sup 7 Se impurity. From the results for the pure systems, sup 7 sup 7 Se in selenium and sup 1 sup 2 sup 5 Te in tellurium, using the observed quadrupole moments: Q( sup 7 sup 7 Se) 0.75 +- 0.07 barns and Q( sup 1 sup 2 sup 5 Te) = 0.35 +- 0.04 barns. Comparison is made with earlier values obtained by different methods. Using our calculated values of Q and the results of a study of the field-gradient tensors for sup 7 sup 7 Se in tellurium, the theoretical values of the quadrupole coupling constants are found to agree, within about 7 percent, with experiment. The calculated asymmetry parameters are also found to be in reasonable agreement with the experiment values, although the agreement not as close as in the case of the quadrupole -coupling constants. Directions fo...

Excitonic surface polaritons in luminescence from ZnTe crystals

International Nuclear Information System (INIS)

Brodin, M.S.; Bandura, V.M.; Matsko, M.G.

1984-01-01

The form and structure of reflection and exciton-polariton luminescence spectra of ZnTe crystals are studied in the region of the ground (n = 1) exciton state. The longitudinal-transverse splitting magnitude ΔE/sub LT/ is determined from the shape of the reflection spectra. A detected doublet structure of an emission band from the lower polariton branch is associated with the k-linear term. The evolution of bulk and surface polariton luminescence spectra versus temperature and wavelength of the exciting light is investigated. (author)

Excitonic surface polaritons in luminescence from ZnTe crystals

Energy Technology Data Exchange (ETDEWEB)

Brodin, M.S.; Bandura, V.M.; Matsko, M.G. (AN Ukrainskoj SSR, Kiev. Inst. Fiziki)

1984-10-01

The form and structure of reflection and exciton-polariton luminescence spectra of ZnTe crystals are studied in the region of the ground (n = 1) exciton state. The longitudinal-transverse splitting magnitude ..delta..E/sub LT/ is determined from the shape of the reflection spectra. A detected doublet structure of an emission band from the lower polariton branch is associated with the k-linear term. The evolution of bulk and surface polariton luminescence spectra versus temperature and wavelength of the exciting light is investigated.

TM-TE hybridization and tunable refraction in magnetophotonic crystals

Energy Technology Data Exchange (ETDEWEB)

Khanikaev, A.B. [Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1, Hibari-Ga-Oka, Toyohashi 441-8580 (Japan)]. E-mail: khanikaev@maglab.eee.tut.ac.jp; Inoue, M. [Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1, Hibari-Ga-Oka, Toyohashi 441-8580 (Japan); Granovsky, A.B. [Faculty of Physics, Lomonosov Moscow State University, Leninski Gory, Moscow 119992 (Russian Federation)

2006-05-15

In the present work we study the photonic band structure (PBS) and the polarization state of the Bloch eigenmodes of a two-dimensional magnetophotonic crystal (MPC) with square lattice formed from magneto-optically (MO) active cylinders. The refraction of light at the boundary of the MPC is analyzed. We found that both-the PBS and eigenmodes of the MPC-are most significantly altered by the MO activity in the vicinity of the degeneracies. For this case we demonstrated the possibility of an abrupt change in the propagation direction of light by the application of a magnetic field. For the Bloch wave vectors and frequencies corresponding to non-degenerate branches, the alteration of the PBS is shown to be negligible and eigenmodes almost completely coincide with linearly TE- and/or TM-polarized eigenmodes of the non-magnetic photonic crystal.

TM-TE hybridization and tunable refraction in magnetophotonic crystals

International Nuclear Information System (INIS)

Khanikaev, A.B.; Inoue, M.; Granovsky, A.B.

2006-01-01

In the present work we study the photonic band structure (PBS) and the polarization state of the Bloch eigenmodes of a two-dimensional magnetophotonic crystal (MPC) with square lattice formed from magneto-optically (MO) active cylinders. The refraction of light at the boundary of the MPC is analyzed. We found that both-the PBS and eigenmodes of the MPC-are most significantly altered by the MO activity in the vicinity of the degeneracies. For this case we demonstrated the possibility of an abrupt change in the propagation direction of light by the application of a magnetic field. For the Bloch wave vectors and frequencies corresponding to non-degenerate branches, the alteration of the PBS is shown to be negligible and eigenmodes almost completely coincide with linearly TE- and/or TM-polarized eigenmodes of the non-magnetic photonic crystal

Photovoltaic effect in Bi2TeO5 photorefractive crystal

International Nuclear Information System (INIS)

Oliveira, Ivan de; Capovilla, Danilo Augusto; Carvalho, Jesiel F.; Montenegro, Renata; Fabris, Zanine V.; Frejlich, Jaime

2015-01-01

We report on the presence of a strong photovoltaic effect on nominally undoped photorefractive Bi 2 TeO 5 crystals and estimated their Glass photovoltaic constant and photovoltaic field for λ = 532 nm illumination. We directly measured the photovoltaic-based photocurrent in this material under λ = 532 nm wavelength laser light illumination and compared its behavior with that of a well known photovoltaic Fe-doped Lithium Niobate crystal. We also show the photovoltaic current to strongly depend on the polarization direction of light. Holographic diffraction efficiency oscillation during recording and the behavior of fringe-locked running holograms in self-stabilized experiments are also demonstrated here as additional indirect proofs of the photovoltaic nature of this material

Elaboration and optical properties of type-II ZnTe on ZnSe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Najjar, Rita, E-mail: rita.najjar@cea.f [CEA-CNRS group ' Nanophysique et semiconducteurs' , Institut NEEL-CNRS, BP166, 25 rue des martyrs, 38042 Grenoble Cedex 9 (France); Andre, Regis; Besombes, Lucien; Bougerol, Catherine; Tatarenko, Serge; Mariette, Henri [CEA-CNRS group ' Nanophysique et semiconducteurs' , Institut NEEL-CNRS, BP166, 25 rue des martyrs, 38042 Grenoble Cedex 9 (France)

2009-11-25

Special growth conditions are presented in this work, in order to produce ZnTe/ZnSe type-II quantum dots and preserve them during the capping stage. A detailed study emphasizes the high sensitivity of the sample structure to Se/Zn ratio as opposed to other growth parameters. It is shown that nominally identical samples can evolve into two-dimensional quantum well or quantum dot plane, depending on which element is in excess. Transmission electron microscopy, atomic force microscopy and optical characterizations evidence this phenomenon.

Topological surface states of Bi{sub 2}Te{sub 2}Se are robust against surface chemical modification

Energy Technology Data Exchange (ETDEWEB)

Thomas, Conor R.; Sahasrabudhe, Girija; Kushwaha, Satya Kumar; Cava, Robert J.; Schwartz, Jeffrey [Department of Chemistry, Princeton University, Princeton, NJ (United States); Xiong, Jun [Department of Physics, Princeton University, Princeton, NJ (United States)

2014-12-01

The robustness of the Dirac-like electronic states on the surfaces of topological insulators (TIs) during materials process-ing is a prerequisite for their eventual device application. Here, the (001) cleavage surfaces of crystals of the topological insulator Bi{sub 2}Te{sub 2}Se (BTS) were subjected to several surface chemical modification procedures that are common for electronic materials. Through measurement of Shubnikov-de Hass (SdH) oscillations, which are the most sensitive measure of their quality, the surface states of the treated surfaces were compared to those of pristine BTS that had been exposed to ambient conditions. In each case - surface oxidation, deposition of thin layers of Ti or Zr oxides, or chemical modification of the surface oxides - the robustness of the topological surface electronic states was demonstrated by noting only very small changes in the frequency and amplitude of the SdH oscillations. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Biogenic SeNPs from Bacillus mycoides SelTE01 and Stenotrophomonas maltophilia SelTE02: Characterization with reference to their associated organic coating

Science.gov (United States)

Piacenza, Elena; Bulgarini, Alessandra; Lampis, Silvia; Vallini, Giovanni; Turner, Raymond J.

2017-08-01

The exploitation of biological systems (i.e. plants, fungi and bacteria) for the production of nanomaterials relies on their ability to bioconvert toxic metal(loid) ions into their less toxic and bioavailable elemental states forming mainly nanoparticles (NPs) or nanorods (NRs). Further, these methods of nanomaterial production are nowadays recognized as eco-friendly alternatives to the chemical synthesis processes. A common feature among the so-called biogenic nanomaterials is the presence of an organic layer surrounding them. However, we are just learning the existing relation between biogenic nanostructures and their organic material. Our work is focused on the study of bacterial strains for the production of selenium nanoparticles (SeNPs) as end product of selenite (SeO32 -) bioconversion. In this context, our previous reports described the ability of two bacteria, namely Bacillus mycoides SelTE01 and Stenotrophomonas maltophilia SelTE02, to generate SeNPs, which were surrounded by organic material. Here, the potential role of this organic material as stabilizing agent of SeNPs was investigated altering both the bacteria cells culturing and the SeNPs extraction procedure, in order to understand the interaction between these two elements in suspension. As a result, SeNPs produced by both bacterial strains showed the tendency to aggregate when subjected to the treatments tested, suggesting an involvement of the surrounding organic material in their stabilization in suspension.

Effect of lattice disorder on the thermal conductivity of ZnBeSe, ZnMgSe and ZnBeMgSe crystals

International Nuclear Information System (INIS)

Strzałkowski, K.

2015-01-01

Zn 1−x−y Be x Mg y Se mixed crystals investigated in this work were grown from the melt by the high pressure high temperature modified Bridgman method in the range of composition 0 < x,y < 0.33. Photopyroelectric (PPE) calorimetry in the back (BPPE) and front (FPPE) configuration was applied for thermal investigation of solid samples. The thermal diffusivity and effusivity of investigated crystals were derived from the experimental data. Since dynamic thermal parameters are connected with each other, thermal conductivity of the specimens was calculated from theoretical dependencies between them. The influence of the beryllium (x) and magnesium (y) content on thermal properties of these crystals have been presented and discussed. Order-disorder effects observed for these materials previously have been also taken into account. Finally, thermal diagrams, i.e. thermal conductivity versus composition were presented and discussed applying model given by Sadao Adachi. - Highlights: • Investigated II–VI crystals were obtained by a high pressure modified Bridgman method. • A complete thermal characterization of Zn 1−x−y Be x Mg y Se semiconductors was carried out. • The effect of lattice disorder on thermal properties was presented and discussed. • Obtained data were analyzed applying lattice thermal conductivity model. • Contribution to thermal resistivity arising from lattice disorder was calculated

Atomic structures of Cd Te and Cd Se (110) surfaces

International Nuclear Information System (INIS)

Watari, K.; Ferraz, A.C.

1996-01-01

Results are reported based on the self-consistent density-functional theory, within the local-density approximation using ab-initio pseudopotentials of clean Cd Te and Cd Se (110) surfaces. We analyzed the trends for the equilibrium atomic structures, and the variations of the bond angles at the II-VI (110). The calculations are sensitive to the ionicity of the materials and the results are in agreement with the arguments which predict that the relaxed zinc-blend (110) surfaces should depend on ionicity. (author). 17 refs., 1 figs., 3 tabs

Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3

OpenAIRE

Kaveev, A. K.; Sokolov, N. S.; Suturin, S. M.; Zhiltsov, N. S.; Golyashov, V. A.; Tereshchenko, O. E.; Prosvirin, I. P.; Kokh, K. A.; Sawada, M.

2018-01-01

Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on Bi2Se3(001) at RT using high-temperature seeding layer. Therefore, structurally ordered ferromagnetic thin films were obtained on the topological insulator surface for the firs...

Studies on Cd1Se0.6Te0.4 Thin Films by Spectroscopic and Diffractometer Characterization

Directory of Open Access Journals (Sweden)

Cliff Orori Mosiori

2017-09-01

Full Text Available Cadmium selenide tellurium is a compound containing cadmium, tellurium and selenium elements forming a combined solid. Hall measurements suggest that it is an n-type semiconductor. Related optical studies indicate that is transparent to infra-red radiation. Structural studies clearly show that it has a wurtzite, sphalerite crystalline forms. Cadmium is a toxic heavy metal, and selenium is only toxic in large amounts or doses. By this toxicity, cadmium selenide is a known to be carcinogen to humans; however, this does not stop investigating it for optoelectronic applications. Current research has narrowed down to investigating cadmium selenide when in the form of nanoparticles. Cadmium selenide finds applications has found applications in opto-electronic devices like laser diodes, biomedical imaging, nano-sensing, high-efficiency solar cells and thin-film transistors. By chemical bath deposition, Cd1Se0.6Te0.4 thin films were grown onto glass. Tellurium was gradually introduced as an impurity and its crystalline structure and optical properties were investigated by XRD and UV-VIS spectroscopy. The main Cd1Se0.6Te0.4/glass characteristics were correlated with the conditions of growing and post-growth treatment and it was found out that films were homogeneous films with controllable thickness onto the glass substrate and suitable for n-type “sandwich” heterostructures applications. Comparison of the intensities of equivalent reflexions provided a test for the internal consistency of the measurements. Equivalent reflexions in two specimens differed on average by 1.4 % and 0.6% from the mean measured intensity, attesting to the high internal consistency of measurements from extended-face crystals. By comparison from data obtained from all samples showed their average deviation from the mean to be 0.9 %.

Enhanced oxidation stability of quasi core-shell alloyed CdSeS quantum dots prepared through aqueous microwave synthesis technique.

Science.gov (United States)

Zhan, Hong-Ju; Zhou, Pei-Jiang; Ma, Rong; Liu, Xi-Jing; He, Yu-Ning; Zhou, Chuan-Yun

2014-01-01

Quasi core shell alloyed CdSeS quantum dots (QDs) have been prepared through a facile aqueous-phase route employing microwave irradiation technique. The optical spectroscopy and structure characterization evidenced the quasi core shell alloyed structures of CdSeS QDs. The X-ray diffraction patterns of the obtained CdSeS QDs displayed peak positions very close to those of bulk cubic CdS crystal structures and the result of X-ray photoelectron spectroscopy data re-confirmed the thick CdS shell on the CdSe core. The TEM images and HRTEM images of the CdSeS QDs ascertained the well-defined spherical particles and a relatively narrow size distribution. On the basis, the stability of the obtained QDs in an oxidative environment was also discussed using etching reaction by H2O2. The experiments result showed the as-prepared QDs present high tolerance towards H2O2, obviously superior to the commonly used CdTe QDs and core-shell CdTe/CdS QDs, which was attributed to the unique quasi core-shell CdSeS crystal structure and the small lattice mismatch between CdSe and CdS semiconductor materials. This assay provided insight to obtain high stable crystal structured semiconductor nanocrystals in the design and synthesis process.

Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of GexSb2Te3+x (x=1,2,3) phase change material

NARCIS (Netherlands)

Kooi, B.J.; de Hosson, J.T.M.

2002-01-01

The crystal structures of GeSb2Te4, Ge2Sb2Te5, and Ge3Sb2Te6 were determined using electron diffraction and high-resolution transmission electron microscopy. The structure determined for the former two crystals deviates from the ones proposed in the literature. These crystal structures were

Effect of Sn additive on the structure and crystallization kinetics in Ge–Se alloy

Energy Technology Data Exchange (ETDEWEB)

Abd-Elrahman, M.I., E-mail: mostafaia11@yahoo.com; Hafiz, M.M.; Abdelraheem, A.M.; Abu-Sehly, A.A.

2016-08-05

The structure of Ge{sub 20}Se{sub 80−x}Snx glassy alloys and crystallization phases are identified using the X-ray diffraction (XRD) and Scanning Electron Microscope (SEM). The glass transition kinetics and the crystallization mechanism of the system are studied using Differential Scanning Calorimeter (DSC) under non-isothermal condition. The results reveal that glass transition temperature (Tg) increases with increasing Sn content which is attributed to the increase in the coordination number. The increase of the glass transition activation energy (Eg) with increasing Sn content is attributed to the decrease in the internal energy of the system as Sn increases. The compositional dependence of both glass forming ability and thermal stability are studied. From the experimental data, the thermal stability parameter (S) is found to be maximum for Ge{sub 20}Se{sub 78}Sn{sub 2} alloy, which indicates that this alloy is thermally more stable in the composition range under investigation. The effect of composition on the crystallization mechanism is discussed using different kinetic models. The crystallization activation energy (Ec) decreases with increasing Sn. This is attributed to the addition of Sn increases the tendency of crystallization. The calculated values of Avrami exponent (n) indicates the crystallization process occurs in one-and two dimensions for Sn is less than or equals 12 at%, respectively. - Highlights: • Glass and crystallization transitions in Ge{sub 20}Se{sub 80−x}Sn{sub x} candidate for devices. • The addition of Sn increases the tendency of Ge-Se alloy to crystallization. • The glass forming ability and thermal stability increase as Sn decreases. • The dimension of the crystals growth is one or two depending on the Sn content.

Surface composition of Cd{sub 1–x}Fe(Mn){sub x}Te{sub 1–y}Se{sub y} systems exposed to air

Energy Technology Data Exchange (ETDEWEB)

Bundaleski, Nenad [University of Belgrade–Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia); Universidade Nova de Lisboa–Faculdade de Ciências e Tecnologia, Quinta da Torre, 2829–516 Caparica (Portugal); Radisavljević, Ivana, E-mail: iva@vin.bg.ac.rs [University of Belgrade–Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia); Trigueiro, João [Universidade Nova de Lisboa–Faculdade de Ciências e Tecnologia, Quinta da Torre, 2829–516 Caparica (Portugal); Tolstogouzov, Alexander [Universidade Nova de Lisboa–Faculdade de Ciências e Tecnologia, Quinta da Torre, 2829–516 Caparica (Portugal); Ryazan State Radio Engineering University, Gagarin 59/1, 390005 Ryazan (Russian Federation); Rakočević, Zlatko; Medić, Mirjana [University of Belgrade–Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia); Teodoro, Orlando M.N.D. [Universidade Nova de Lisboa–Faculdade de Ciências e Tecnologia, Quinta da Torre, 2829–516 Caparica (Portugal); Romčević, Nebojša [University of Belgrade–Institute of Physics, Pregrevica 118, 11000 Belgrade (Serbia); Ivanović, Nenad [University of Belgrade–Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade (Serbia)

2017-03-01

Using X–ray induced Photoelectron Spectroscopy, Time–of–Flight Secondary Ion Mass Spectrometry and Atomic Force Microscopy we have investigated elemental composition, structure and oxidation process taking place at the surfaces of polycrystalline Cd{sub 0.99}Fe{sub 0.01}Te{sub 0.97}Se{sub 0.03} and Cd{sub 0.95}Mn{sub 0.05}Te{sub 0.97}Se{sub 0.03} systems stored in ambient conditions. The surface oxidation destroys the native CdTe matrix and provokes substantial atomic rearrangement in the first few atomic layers. The near–surface region of both systems is enriched in Cd and to some extent Te–deficient, but the surface structure, morphology and the native oxide composition are all found to be considerably different. In Cd{sub 0.99}Fe{sub 0.01}Te{sub 0.97}Se{sub 0.03} system both Fe and Se dopants diffuse into the bulk and oxidation of its surface results in formation of a thin CdTeO{sub 3} layer which covers the CdTe matrix. In Cd{sub 0.95}Mn{sub 0.05}Te{sub 0.97}Se{sub 0.03} system oxygen–rich atmosphere triggers Mn and Se out–diffusion and the nonuniform oxide layer predominantly consists of MnO and a small amount of Te–oxide which both lay underneath a thin layer of metallic Cd segregated at the top of the surface. - Highlights: • Nature of the CdFe(Mn)TeSe surfaces exposed to air is substantially different. • Near–surface region is enriched in Cd and to some extent Te–deficient. • Presence of Mn drastically changes the surface oxidation conditions. • The surface oxidation in ambient conditions undergoes different mechanisms. • Oxygen triggers Mn out–diffusion, while Fe diffuses into the bulk.

Origin of electronic properties of PbGa2Se4 crystal: Experimental and theoretical investigations

International Nuclear Information System (INIS)

Babuka, T.; Kityk, I.V.; Parasyuk, O.V.; Myronchuk, G.; Khyzhun, O.Y.; Fedorchuk, A.O.; Makowska-Janusik, M.

2015-01-01

Graphical abstract: In the presented work the structural and electronic properties of the PbGa 2 Se 4 single crystal were investigated experimentally as well as theoretically. The XPS spectra, Urbach’s rule and steepness parameters of PbGa 2 Se 4 single crystal have been investigated for the first time. The quantum chemical calculations were also never performed before for the studied structure. The theoretically obtained data help to explain the properties of material. - Highlights: • Urbach’s rule and steepness parameters for PbGa 2 Se 4 crystals explored for the first time. • Non-reactivity of the PbGa 2 Se 4 surface was established by XPS. • DFT approach shows its efficiency to describe electronic properties of PbGa 2 Se 4 . • Electronic parameters are affected by existence of electron–phonon interaction. - Abstract: The PbGa 2 Se 4 crystal is a promising material for optoelectronic applications. It is caused by coexistence of the large polarized Pb cations and a huge contribution of anharmonic phonon subsystem caused by chalcogenide anions. In the present work the electronic and optical properties of the mentioned material were studied theoretically as well as experimentally by optical and X-ray photoelectron spectroscopy methods. The DFT approach has been used for the quantum chemical electronic properties calculations. Urbach rule and steepness parameters of the PbGa 2 Se 4 crystal have been evaluated for the first time. These parameters and Urbach energies increase with increasing temperature of the samples that is typical for the semiconducting materials. The XPS measurements of the investigated crystal reveal that all the spectral features are originated from core-level states of the constituent elements. Simultaneously these results also confirm non-reactivity of the PbGa 2 Se 4 surface. However, the titled single crystal possesses a number of intrinsic structural defects and vacancies thereby affecting its electronic properties. The

The lunar core can be a major reservoir for volatile elements S, Se, Te and Sb.

Science.gov (United States)

Steenstra, Edgar S; Lin, Yanhao; Dankers, Dian; Rai, Nachiketa; Berndt, Jasper; Matveev, Sergei; van Westrenen, Wim

2017-11-06

The Moon bears a striking compositional and isotopic resemblance to the bulk silicate Earth (BSE) for many elements, but is considered highly depleted in many volatile elements compared to BSE due to high-temperature volatile loss from Moon-forming materials in the Moon-forming giant impact and/or due to evaporative loss during subsequent magmatism on the Moon. Here, we use high-pressure metal-silicate partitioning experiments to show that the observed low concentrations of volatile elements sulfur (S), selenium (Se), tellurium (Te), and antimony (Sb) in the silicate Moon can instead reflect core-mantle equilibration in a largely to fully molten Moon. When incorporating the core as a reservoir for these elements, their bulk Moon concentrations are similar to those in the present-day bulk silicate Earth. This suggests that Moon formation was not accompanied by major loss of S, Se, Te, Sb from Moon-forming materials, consistent with recent indications from lunar carbon and S isotopic compositions of primitive lunar materials. This is in marked contrast with the losses of other volatile elements (e.g., K, Zn) during the Moon-forming event. This discrepancy may be related to distinctly different cosmochemical behavior of S, Se, Te and Sb within the proto-lunar disk, which is as of yet virtually unconstrained.

Molecular structures of Se(SCH3)2 and Te(SCH3)2 using gas-phase electron diffraction and ab initio and DFT geometry optimisations.

Science.gov (United States)

Fleischer, Holger; Wann, Derek A; Hinchley, Sarah L; Borisenko, Konstantin B; Lewis, James R; Mawhorter, Richard J; Robertson, Heather E; Rankin, David W H

2005-10-07

The molecular structures of Se(SCH(3))(2) and Te(SCH(3))(2) were investigated using gas-phase electron diffraction (GED) and ab initio and DFT geometry optimisations. While parameters involving H atoms were refined using flexible restraints according to the SARACEN method, parameters that depended only on heavy atoms could be refined without restraints. The GED-determined geometric parameters (r(h1)) are: rSe-S 219.1(1), rS-C 183.2(1), rC-H 109.6(4) pm; angleS-Se-S 102.9(3), angleSe-S-C 100.6(2), angleS-C-H (mean) 107.4(5), phiS-Se-S-C 87.9(20), phiSe-S-C-H 178.8(19) degrees for Se(SCH(3))(2), and rTe-S 238.1(2), rS-C 184.1(3), rC-H 110.0(6) pm; angleS-Te-S 98.9(6), angleTe-S-C 99.7(4), angleS-C-H (mean) 109.2(9), phiS-Te-S-C 73.0(48), phiTe-S-C-H 180.1(19) degrees for Te(SCH(3))(2). Ab initio and DFT calculations were performed at the HF, MP2 and B3LYP levels, employing either full-electron basis sets [3-21G(d) or 6-31G(d)] or an effective core potential with a valence basis set [LanL2DZ(d)]. The best fit to the GED structures was achieved at the MP2 level. Differences between GED and MP2 results for rS-C and angleS-Te-S were explained by the thermal population of excited vibrational states under the experimental conditions. All theoretical models agreed that each compound exists as two stable conformers, one in which the methyl groups are on the same side (g(+)g(-) conformer) and one in which they are on different sides (g(+)g(+) conformer) of the S-Y-S plane (Y = Se, Te). The conformational composition under the experimental conditions could not be resolved from the GED data. Despite GED R-factors and ab initio and DFT energies favouring the g(+)g(+) conformer, it is likely that both conformers are present, for Se(SCH(3))(2) as well as for Te(SCH(3))(2).

Effect of O- and Mn-doping on superconductivity in FeTe{sub 0.5}Se{sub 0.5} superconductor

Energy Technology Data Exchange (ETDEWEB)

Thakur, Gohil S.; Haque, Zeba; Ganguli, Ashok K. [Department of Chemistry, Indian Institute of Technology, New Delhi (India); Neha, Prakriti; Patnaik, Satyabrata [School of Physical Science, Jawaharlal Nehru University, New Delhi (India); Gupta, Laxmi C. [Department of Chemistry, Indian Institute of Technology, New Delhi (India); Visiting project scientist at the:Solid State and Nanomaterials Research Laboratory, Department of Chemistry, IIT Delhi (India)

2014-05-15

The effect of oxygen substitution at the selenium site and manganese substitution at the iron site in FeTe{sub 0.5}Se{sub 0.5} superconductor was investigated. It was found that upon partial O substitution, T{sub c} marginally decreases as seen in both resistivity and magnetization experiments. T{sub c} decreases even by a small amount of oxygen concentration (as low as 1 %). This observation is in contrast against an earlier work on Fe(Te/Se) samples,1 wherein T{sub c} as well as superconducting volume fraction were reported to increase in the samples annealed in air. Mn-doping leads to a decrease in T{sub c} in FeTe{sub 0.5}Se{sub 0.5}, which one would expect considering pair-breaking due to Mn{sup 2+}-ions. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Crystal structure of RbCe(SeO4)2 · 5H2O

International Nuclear Information System (INIS)

Ovanesyan, S.M.; Iskhakova, L.D.; Trunov, V.K.

1987-01-01

RbTR(SeO 4 ) 2 x5H 2 O TR=La-Pr are synthesized. Crystal structure of RbCe(SeO 4 ) 2 x5H 2 O is studied. Monoclinic unit parameters are: a=7,200(2), b=8,723(1), c=19,258(6) A, Β=90,88(2), ρ (calc) =3,304 sp.gr. P2 1 /c. Within the structure the Ce nine vertex cages are united by Se(1)- and Se(2)-tetrahedrons in (Ce(SeO 4 ) 2 (H 2 O) 5 ) 2 ∞ n- layers. Some crystal structure regularities of the laminated MTR(EO 4 ) 2 xnH 2 O (M=NH 4 ,K,Rb,Cs; TR=La-Ln, E=S,Se) are considered

Generalized stacking fault energies, cleavage energies, ionicity and brittleness of Cu(Al/Ga/In)Se2 and CuGa(S/Se/Te)2

Science.gov (United States)

Xue, H. T.; Tang, F. L.; Gruhn, T.; Lu, W. J.; Wan, F. C.; Rui, Z. Y.; Feng, Y. D.

2014-04-01

We calculate the generalized stacking fault (GSF) energies and cleavage energies γcl of the chalcopyrite compounds CuAlSe2, CuGaSe2, CuInSe2, CuGaS2 and CuGaTe2 using first principles. From the GSF energies, we obtain the unstable stacking fault energies γus and intrinsic stacking fault energies γisf. By analyzing γus and γisf, we find that the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) direction is the easiest slip direction for these five compounds. Also, for CuInSe2, it is most possible to undergo a dislocation-nucleation-induced plastic deformation along the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) slip direction. We show that the (1 1 2) plane is the preferable plane for fracture in the five compounds by comparing γcl of the (0 0 1) and (1 1 2) planes. It is also found that both γus and γcl decrease as the cationic or anionic radius increases in these chalcopyrites, i.e. along the sequences CuAlSe2 → CuGaSe2 → CuInSe2 and CuGaS2 → CuGaSe2 → CuGaTe2. Based on the values of the ratio γcl/γus, we discuss the brittle-ductile properties of these compounds. All of the compounds can be considered as brittle materials. In addition, a strong relationship between γcl/γus and the total proportion of ionic bonding in these compounds is found.

Aqueous-Processed Inorganic Thin-Film Solar Cells Based on CdSe(x)Te(1-x) Nanocrystals: The Impact of Composition on Photovoltaic Performance.

Science.gov (United States)

Zeng, Qingsen; Chen, Zhaolai; Zhao, Yue; Du, Xiaohang; Liu, Fangyuan; Jin, Gan; Dong, Fengxia; Zhang, Hao; Yang, Bai

2015-10-21

Aqueous processed nanocrystal (NC) solar cells are attractive due to their environmental friendliness and cost effectiveness. Controlling the bandgap of absorbing layers is critical for achieving high efficiency for single and multijunction solar cells. Herein, we tune the bandgap of CdTe through the incorporation of Se via aqueous process. The photovoltaic performance of aqueous CdSexTe1-x NCs is systematically investigated, and the impacts of charge generation, transport, and injection on device performance for different compositions are deeply discussed. We discover that the performance degrades with the increasing Se content from CdTe to CdSe. This is mainly ascribed to the lower conduction band (CB) of CdSexTe1-x with higher Se content, which reduces the driving force for electron injection into TiO2. Finally, the performance is improved by mixing CdSexTe1-x NCs with conjugated polymer poly(p-phenylenevinylene) (PPV), and power conversion efficiency (PCE) of 3.35% is achieved based on ternary NCs. This work may provide some information to further optimize the aqueous-processed NC and hybrid solar cells.

X-ray photoelectron spectra and electronic structure of quasi-one-dimensional SbSeI crystals

Directory of Open Access Journals (Sweden)

J.Grigas

2007-01-01

Full Text Available The paper presents the X-ray photoelectron spectra (XPS of the valence band (VB and of the principal core levels from the (110 and (001 crystal surfaces for the quasi-one-dimensional high permittivity SbSeI single crystal isostructural to ferroelectric SbSI. The XPS were measured with monochromatized Al Ka radiation in the energy range of 0-1400 eV at room temperature. The VB is located from 1.6 to 20 eV below the Fermi level. Experimental energies of the VB and core levels are compared with the results of theoretical ab initio calculations of the molecular model of the SbSeI crystal. The electronic structure of the VB is revealed. Shifts in the core-level binding energies of surface atoms relative to bulk ones, which show a dependency on surface crystallography, have been observed. The chemical shifts of the core levels (CL in the SbSeI crystal for the Sb, I and Se states are obtained.

Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

KAUST Repository

Cheng, Wei; Ren, Shang-Fen

2011-01-01

Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

KAUST Repository

Cheng, Wei

2011-03-10

Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Effect of surface treatment of thermoelectric materials on the properties of thermoelements made from solid solutions of Bi2Te3-Bi2Se3 and Bi2Te3-Sb2Te3 systems

International Nuclear Information System (INIS)

Alieva, T.D.; Abdinov, D.Sh.; Salaev, Eh.Yu.

1981-01-01

Effect of surface treatment technology of samples of solid solutions of Ei 2 Te 3 -Bi 2 Se 3 and Bi 2 Te 3 -Sb 2 Te 3 systems on their thermoelectric efficiency is studied. Branches of thermoelements have been produced with the help of electroerosion or mechanical cutting of monocrystal ingots of semiconducting solid Bi 2 Te 3 -base solutions. It is shown that in case of the treatment of side surfaces of branches of thermoelements produced of monocrystals of Bi 2 Te 3 base solid solutions their thermoelectrical efficiency grows considerably. Maximum growth of efficiency (approximately 20%) is observed during mechanical grinding of branches surfaces with diamond paste with the following chemical or electrochemical etching [ru

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

International Nuclear Information System (INIS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-01-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

Order–disorder phenomena in layered CuCrSe{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Gagor, A., E-mail: a.gagor@int.pan.wroc.pl; Gnida, D.; Pietraszko, A.

2014-08-01

The thermal motion of Cu{sup +} ions in a quasi-two dimensional copper ion conductor CuCrSe{sub 2} is studied in the vicinity of the order-disorder phase transition to superionic phase, basing on a single-crystal and powder X-ray diffraction, specific heat and electrical resistivity measurements. The copper ions gradually migrate with temperature decrease to empty tetrahedral sites reaching occupancy equilibrium in the disordered high-temperature phase at T{sub s} = 365 K. The copper migration between Cuα and Cuβ tetrahedral sites occurs through the neighboring, face-sharing octahedral holes. Disorder of Cu{sup +} ions brings perturbations in periodic potential of the crystal lattice providing additional scattering centers for electrons. - Graphical abstract: Copper migration within α and β sites. - Highlights: • Single crystals of CuCrSe{sub 2} have been grown by vapor transport. • Thermally activated motion of Cu{sup +} ions is analyzed from T = 295 up to 420 K. • An order–disorder phase transition at T{sub s} = 365 K leads to fast ion conducting state. • Interplay between lattice vibrations and Se polarizability accounts for Cu{sup +} hops. • Electrical resistivity near the T{sub s} shows two additional scattering centers.

The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

Science.gov (United States)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

Electronic structure and superconductivity of FeSe-related superconductors.

Science.gov (United States)

Liu, Xu; Zhao, Lin; He, Shaolong; He, Junfeng; Liu, Defa; Mou, Daixiang; Shen, Bing; Hu, Yong; Huang, Jianwei; Zhou, X J

2015-05-13

FeSe superconductors and their related systems have attracted much attention in the study of iron-based superconductors owing to their simple crystal structure and peculiar electronic and physical properties. The bulk FeSe superconductor has a superconducting transition temperature (Tc) of ~8 K and it can be dramatically enhanced to 37 K at high pressure. On the other hand, its cousin system, FeTe, possesses a unique antiferromagnetic ground state but is non-superconducting. Substitution of Se with Te in the FeSe superconductor results in an enhancement of Tc up to 14.5 K and superconductivity can persist over a large composition range in the Fe(Se,Te) system. Intercalation of the FeSe superconductor leads to the discovery of the AxFe2-ySe2 (A = K, Cs and Tl) system that exhibits a Tc higher than 30 K and a unique electronic structure of the superconducting phase. A recent report of possible high temperature superconductivity in single-layer FeSe/SrTiO3 films with a Tc above 65 K has generated much excitement in the community. This pioneering work opens a door for interface superconductivity to explore for high Tc superconductors. The distinct electronic structure and superconducting gap, layer-dependent behavior and insulator-superconductor transition of the FeSe/SrTiO3 films provide critical information in understanding the superconductivity mechanism of iron-based superconductors. In this paper, we present a brief review of the investigation of the electronic structure and superconductivity of the FeSe superconductor and related systems, with a particular focus on the FeSe films.

T-x-y diagrams for reciprocal systems PbX + CdI2 = CdX + PbI2 (X=S, Se, Te)

International Nuclear Information System (INIS)

Odin, I.N.

2001-01-01

The present research is undertaken in search of the new complex phases with interesting physical properties. The synthesized samples was analyzed by differential thermal, X-ray diffraction and microstructural methods. The diagonal cross-section CdTe - PbI 2 of the mutual PbTe + CdI 2 = CdTe + PbI 2 system is stable. The T-x phase diagram of the CdTe - PbI 2 system possess eutectic type, the coordinates of eutectic point is 657 ± 2 K, 15 ± 1 mol. % of CdTe. The lead iodide based solid solutions with the mixed structure and the CdTe based solid solutions take place in the equilibria. Solid CdTe dissolves 0.2 mol. % PbI 2 . The fields of the primary crystallization of the CdTe, Pb 1-x Cd x I 2 , PbTe based solid solutions are on the liquidus surface [ru

Determination of total Sb,Se Te, and Bi and evaluation of their inorganic species in garlic by hydride-generation-atomic-fluorescence spectrometry

Energy Technology Data Exchange (ETDEWEB)

Matos Reyes, M.N.; Cervera, M.L.; Guardia, M. de la [University of Valencia, Department of Analytical Chemistry, Burjassot, Valencia (Spain)

2009-07-15

A sensitive and simple analytical method has been developed for determination of Sb(III), Sb(V), Se(IV), Se(VI), Te(IV), Te(VI), and Bi(III) in garlic samples by using hydride-generation-atomic-fluorescence spectrometry (HG-AFS). The method is based on a single extraction of the inorganic species by sonication at room temperature with 1 mol L{sup -1} H{sub 2}SO{sub 4} and washing of the solid phase with 0.1% (w/v) EDTA, followed by measurement of the corresponding hydrides generated under two different experimental conditions directly and after a pre-reduction step. The limit of detection of the method was 0.7 ng g{sup -1} for Sb(III), 1.0 ng g{sup -1} for Sb(V), 1.3 ng g{sup -1} for Se(IV), 1.0 ng g{sup -1} for Se(VI), 1.1 ng g{sup -1} for Te(IV), 0.5 ng g{sup -1} for Te(VI), and 0.9 ng g{sup -1} for Bi(III), in all cases expressed in terms of sample dry weight. (orig.)

Thermoelectric properties of n-type Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} fabricated by mechanical alloying and hot pressing

Energy Technology Data Exchange (ETDEWEB)

Kim, H J; Choi, J S; Oh, T S; Hyun, D B

1997-07-01

Thermoelectric properties of polycrystalline Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} (0.05 {le} x {le} 0.25), fabricated by mechanical alloying and hot pressing, have been investigated. Formation of n-type Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} alloy powders was completed by mechanical alloying for 3 hours at ball-to-material ratio of 5:1, and processing time for Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} formation increased with Bi{sub 2}Se{sub 3} content x. Figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}) was markedly increased by hot pressing at temperatures above 450 C, and maximum value of 1.9 x 10{sup {minus}3}/K was obtained by hot pressing at 550 C. With addition of 0.015 wt% Bi as acceptor dopant, figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} was hot pressed at 550 C, could be improved to 2.1 x 10{sup {minus}3}/K. When Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} was hot pressed at 550 C, figure-of-merit increased from 1.14 x 10{sup {minus}3}/K to 1.92 x 10{sup {minus}3}/K with increasing Bi{sub 2}Se{sub 3} content x from 0.05 to 0.15, and then decreased to 1.30 x 10{sup {minus}3}/K for x = 0.25 composition.

Frequency and Thermal Behavior of Acoustic Absorption in ɛ-GaSe Crystals

Science.gov (United States)

Dzhafarova, S. Z.

2018-04-01

The paper presents results of measuring acoustic absorption in ɛ-GaSe crystals. The absorption of a longitudinal wave which propagates normal to the crystal layers, quadratically depends on frequency. However, it does not depend on temperature, i.e. it displays an Akhiezer behavior although its absolute value considerably exceeds the expected. The analysis of the frequency and thermal behavior of absorption of piezoelectric waves propagating along the layers, includes the deduction of contribution made by the interaction between waves and charge carriers. This analysis shows the linear dependence between the lattice absorption of these waves and the frequency. The linear frequency and weak temperature dependences of the acoustic absorption characterize the additional ultra-Akhiezer absorption in glasses. In our case, it can be caused by various polytypes forming in GaSe crystals which differ merely in a mutual arrangement of layers.

Effect of microwave (24 GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals

International Nuclear Information System (INIS)

Red'ko, R.A.; Budzulyak, S.I.; Vakhnyak, N.D.; Demchina, L.A.; Korbutyak, D.V.; Konakova, R.V.; Lotsko, A.P.; Okhrimenko, O.B.; Berezovskaya, N.I.; Bykov, Yu.V.; Egorov, S.V.; Eremeev, A.G.

2016-01-01

Effect of microwave radiation (24 GHz) on transformation of impurity-defect complexes in CdTe:Cl single crystals within the spectral range 1.3–1.5 eV was studied using the low-temperature (T=2 K) photoluminescence (PL) technique. The shapes of donor–acceptor pairs (DAP) and Y PL bands were studied in detail. The Huang–Rhys factor was calculated for the DAP luminescence depending on microwave radiation treatment. The increase of the distance between the DAP components responsible for emission at 1.455 eV and the quenching of Y-band due to microwave irradiation were observed. The method to decrease the amount of extended defects in near-surface layers of CdTe:Cl single crystals has been proposed.

Electrodeposition and characterization of CdSe{sub x}Te{sub 1-x} semiconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [Faculty of Sciences, Laboratory of Materials Physics, Dept. of Physics, Rabat (Morocco)

1999-07-01

Thin polycrystalline films of cadmium chalcogenides CdSe{sub x}Te{sub 1-x} (0{<=}x{<=}1) can be used for various technical applications in particular for the conversion of solar energy in photoelectrochemical devices. They have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 deg. C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe{sub x}Te{sub 1-x} films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

Effect of high pressure sintering and annealing on microstructure and thermoelectric properties of nanocrystalline Bi2Te2.7Se0.3 doped with Gd

Institute of Scientific and Technical Information of China (English)

Ping Zou; Guiying Xun; Song Wang; Penglei Chen; Fengzhu Huang

2014-01-01

Bi2Te2.7Se0.3 of high performance doped with Gd bulk materials was prepared by a high pressure (6.0 GPa) sintering (HPS) method at 593 K, 633 K, 673 K and 693 K. The sample was then annealed for 36 h in a vacuum at 633 K. The phase composition, crystal structure and morphology of the sample were analyzed by X-ray diffraction and scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity aspects of the sample were measured from 298 K to 473 K. The results show that high pressure sintering and the doping with Gd has a great effect on the crystal structure and the thermoelectric properties of the samples. The samples are consisted of nanoparticles before and after annealing, and these nanostructures have good stability at high temperature. HPS together with annealing can improve the TE properties of the sample by decreasing the thermal conductivity of the sample with nanostructures. The maximum ZT value of 0.74 was obtained at 423 K for the sample, which was sintered at 673 K and then annealed at 633 K for 36 h. Compared with the zone melting sample, it was increased by 85%at 423 K. Hence the temperature of the maximum of figure of merit was increased. The results can be applied to the field of thermoelectric power generation materials.

Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique

International Nuclear Information System (INIS)

Patel, Kaushik; Prajapati, Jagdish; Vaidya, Rajiv; Patel, S.G.

2005-01-01

Single crystals of the lamellar compound, ZrSe 3 , were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700-1450 nm. The indirect as well as direct band gap of ZrSe 3 were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303-423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe 3 single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail. (author)

Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method

Directory of Open Access Journals (Sweden)

S. H. Tabatabai Yazdi

2006-03-01

Full Text Available   Cd0.96Zn0.04Te crystals were grown using vapor phase gas transport method (VPGT. The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are single-phase, whose single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown crystals have resistivity of about 104 Ω cm and n-type conductivity.

Thermoelectric properties of unoxidized graphene/Bi{sub 2}Te{sub 2.7}Se{sub 0.3} composites synthesized by exfoliation/re-assembly method

Energy Technology Data Exchange (ETDEWEB)

Kim, Jin Il; Lee, Eun Sil; Kim, Jong-Young [Icheon Branch, Korea Institute of Ceramic Engineering and Technology, Gyeonggi-do (Korea, Republic of); Choi, Soon-Mok [School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan (Korea, Republic of); Lee, Kyu Hyoung [Materials R and D Center, Samsung Advanced Institute of Technology, Yongin (Korea, Republic of); Seo, Won-Seon [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Seoul (Korea, Republic of)

2014-04-15

Nanocomposites of n-type thermoelectric Bi{sub 2}Te{sub 2.7}Se{sub 0.3} (BTS) and unoxidized graphene (UG) were prepared from the exfoliated BTS and UG nanoplatelets. Polycrystalline BTS ingots were exfoliated into nanoscroll-type crystals by chemical exfoliation, and were re-assembled with UG nanoplatelets. The composites were chemically reduced by hydrazine hydrate and sintered by a spark-plasma-sintering method. The thermoelectric properties of the sintered composites were evaluated and exhibited decreased carrier concentration and increased thermal conductivity due to the embedded graphene. The peak ZT values for the UG/BTS-US and UG/BTS-EX composites were ∝0.8 at the UG concentration of 0.05 wt%. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

Directory of Open Access Journals (Sweden)

W. H. Jiao

2012-06-01

Full Text Available Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10, and high mobility (∼8000 cm2·V−1·s−1. The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.

Effect of the electronic structure of the etched CdTe single crystals on the exciton radiation processes

International Nuclear Information System (INIS)

Tkachuk, P.M.; Tkachuk, V.Yi.; Mel'nichuk, S.V.; Kurik, M.V.

2005-01-01

Under optical excitation the structure of the radiation beyond fundamental absorption of the orientated CdTe single crystals caused by LO-phonon scattering processes of the electron-hole states is observed. Crystals have been doped with impurity of Cl as a result of the surface preparing by etching in Br-methanol. Electronic structure of the single crystals surface layer is identified on the basis of two-phonon radiation absorption investigation. Taking into account the modes selection rules the one and two phonon scattering mechanisms for two crystals surface orientations are determined

Synthesis, crystal structure, and properties of KSbO{sub 3}-type Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11}

Energy Technology Data Exchange (ETDEWEB)

Li Manrong; Retuerto, Maria; Bok Go, Yong; Emge, Thomas J. [Department of Chemistry and Chemical Biology, Rutgers, State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States); Croft, Mark; Ignatov, Alex [Department of Physics and Astronomy, Rutgers, State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Ramanujachary, Kandalam V. [Department of Chemistry and Biochemistry, Rowan University, 210 Mullica Hill Road, Glassboro, NJ 08028 (United States); Dachraoui, Walid; Hadermann, Joke [EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Tang Meibo; Zhao Jingtai [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); Greenblatt, Martha, E-mail: martha@rutchem.rutgers.edu [Department of Chemistry and Chemical Biology, Rutgers, State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States)

2013-01-15

Single crystals of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} were prepared from NaCl+KCl flux. This compound adopts KSbO{sub 3}-type crystal structure as evidenced by electron and single crystal X-ray diffraction analysis. The three-dimensional channel structure is formed by corner-sharing octahedral (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} dimers and two identical (Bi1){sub 4}(Bi2){sub 2} interpenetrating lattices. The intra-dimer Mn/Te-Mn/Te distances in Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} are short and are consistent with weak metal-metal interactions. The mixed oxidation state of manganese and the edge-sharing octahedral features are confirmed by X-ray near edge absorption spectroscopy measurements, which indicate Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{sup VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}. The partial substitution of Te for Mn perturbs long-range magnetic interactions, thereby destroying the ferromagnetic ordering found in Bi{sub 3}Mn{sub 3}O{sub 11} (T{sub C}=150 K). - Graphical abstract: Single crystal of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} was grown from NaCl+KCl binary flux, suggesting that the high pressure Bi{sub 3}Mn{sub 3}O{sub 11} phase can be stabilized by partial substitution of Mn by Te at ambient pressure. Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} adopts a typical three dimensional KSbO{sub 3}-type crystal structure with three interpenetrating lattices and weak intra-dimmer metal-metal interaction caused by the d electrons of Mn. The edge-shared (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} octahedral dimer and mixed oxidation state of manganese (Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{sup VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}) features were evidenced by X-ray absorption near edge spectroscopy. Compared with Bi{sub 3}Mn{sub 3}O{sub 11}, the Te substituted Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} relaxes the crystal structure, but destroys the long

Modeling the isochronal crystallization kinetics

International Nuclear Information System (INIS)

Sahay, S.S.; Krishnan, Karthik

2004-01-01

The classical Johnson-Mehl-Avrami-Kolmogorov (JMAK) model, originally formulated for the isothermal condition, is often used in conjunction with additivity principle for modeling the non-isothermal crystallization kinetics. This approach at times results in significant differences between the model prediction and experimental data. In this article, a modification to this approach has been imposed via an additional functional relationship between the activation energy and heating rate. The methodology has been validated with experimental isochronal crystallization kinetic data in Se 71 Te 20 Sb 9 glass and Ge 20 Te 80 systems. It has been shown that the functional relationship between heating rate and activation energy, ascribed to the reduction in apparent activation energy due to increasing non-isothermality, provides better phenomenological description and therefore improves the prediction capability of the JMAK model under isochronal condition

Iodine as an oxidant in the topotactic deintercalation of interstitial iron in Fe(1+x)Te.

Science.gov (United States)

Rodriguez, Efrain E; Zavalij, Peter; Hsieh, Ping-Yen; Green, Mark A

2010-07-28

The layered telluride, Fe(1+x)Te, is a parent compound of the isostructural and superconducting phases, Fe(1+x)(Te, Se, S). Here we show that, through a simple reaction of I(2) vapor with both powder and single crystal samples, the interstitial iron can be removed from the FeTe framework topotactically. Neutron powder diffraction and X-ray single crystal diffraction confirm that the iron being extracted is the partially occupied site that lies between the 2-D blocks of edge-sharing FeTe(4) tetrahedra. The deintercalation process has consequences for both magnetic and crystallographic phase transitions in the compound at low temperatures. This technique could be of use for the tuning of stoichiometry of the superconducting phases and therefore enable more careful studies on how chemical composition affects magnetic and superconducting properties.

MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

Energy Technology Data Exchange (ETDEWEB)

Kuznetzov, P. I., E-mail: pik218@ire216.msk.su; Averin, S. V., E-mail: sva278@ire216.msk.su; Zhitov, V. A.; Zakharov, L. Yu.; Kotov, V. M. [Russian Academy of Sciences, Kotel’nikov Institute of Radioengineering and Electronics (Fryazino Branch) (Russian Federation)

2017-02-15

On the basis of a type-II ZnSe/ZnTe superlattice, a MSM (metal—semiconductor–metal) photodetector is fabricated and investigated. The detector features low dark currents and a high sensitivity. The spectral characteristic of the detector provides the possibility of the selective detection of three separate spectral portions of visible and near-infrared radiation.

Atomistic tight-binding computations of the structural and optical properties of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals

Science.gov (United States)

Sukkabot, Worasak

2018-05-01

A study of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals is carried out using atomistic tight-binding theory and the configuration interaction method to provide information for applications in bioimaging, biolabeling, display devices and near-infrared electronic instruments. The calculations yield the dependences of the internal and external passivated shells on the natural behaviours of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals. The reduction of the optical band gaps is observed with increasing numbers of monolayers in the external ZnS shell due to quantum confinement. Interestingly, the optical band gaps of CdTe/CdS/ZnS core/shell/shell nanocrystals are greater than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. In the presence of an external ZnS-coated shell, electron-hole wave function overlaps, oscillation strengths, ground-state exchange energies and Stokes shift are improved, whereas ground-state coulomb energies and fine-structure splitting are reduced. The oscillation strengths, Stokes shift and fine-structure splitting are reduced with the increase in external ZnS shell thickness. The oscillation strengths, Stokes shift and fine-structure splitting of CdTe/CdS/ZnS core/shell/shell nanocrystals are larger than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. Reduction of the atomistic electron-hole interactions is observed with increasing external ZnS shell size. The strong electron-hole interactions are more probed in CdTe/CdS/ZnS core/shell/shell nanocrystals than in CdTe/CdSe/ZnS core/shell/shell nanocrystals.

Observation of Anomalous Properties associated with the Low Temperature Structural Distortion in β-FeSe and Related Superconductorsa

Directory of Open Access Journals (Sweden)

Wu M. K.

2012-03-01

Full Text Available The discovery of Superconductivity in the tetragonal phase FeSe provides a unique platform for the detailed investigation of the correlation between the physical properties and crystal structure to better understand the possible origin of superconductivity in the new iron-based superconductors. We have carried out a series of properties characterizations by measuring magnetic susceptibility, Raman, NMR and femtosecond spectroscopy on single crystals and epitaxial thin films of the FeSe and Te-doped Fe(SeTe samples. Our results show clearly the presence of anomalies in all the characterized properties at the temperature where a structural distortion from tetragonal to orthorhombic (or monoclinic appears for all superconducting samples, but not in the non-superconducting ones. This structural distortion was observed not accompanied by a magnetic ordering as commonly occurs in the parent compounds of FeAs-based superconductors. All the observations suggest that the low temperature structural distortion is essential for the occurrence of superconductivity in the FeSe and related compounds. Details of the experimental results will be presented and discussed.

Growth and photo-response of NbSe2 and NbS2 crystals

Science.gov (United States)

Patel, Kunjal; Solanki, G. K.; Pataniya, Pratik; Patel, K. D.

2018-05-01

Transition metal dichalcogenides(TMDCs) have attracted intense research efforts due to their drastic properties change as we move towards ultra-thin crystalline layers from their bulk counterparts. Many well studied members of this family such as MoS2, WS2, WSe2, WS2 etc. have shown potential for flexible electronic devices including photovoltaic applications. The TMDCs like NbSe2 and NbS2 are relatively less studied layered compounds consisting of staked sandwiches of Se-Nb-Se/S-Nb-Se tri-layers with strong covalent/ionic intra layer bonds and weak Van der Waals interlayer interactions. In the present work, author have grown the crystals of NbSe2 and NbS2 by Direct Vapour Transport (DVT) technique and the material composition is confirmed using EDAX data. Photoelectrochemical (PEC) solar cell measurements are performed under monochromatic light illumination at different intensities and various solar cell parameters are calculated. These crystalline semiconductor electrodes were also analysed by photocurrent-voltage characteristics in a PEC solar cell structure (Cu/NbSe2/(0.1M K4Fe(CN)6 + 0.1M K3Fe(CN)6) and Cu/NbS2/(0.1M K4Fe(CN)6 +0.1M K3Fe(CN)6)). Blue coloured light gave the maximum efficiency. For further analysis of photodetection properties of the grown crystals, Ag painted broad low contact resistance electrical contacts were drawn from the crystals and its transient photoresponse was studied to evaluate different detector parameters.

Assembly of cerium(III)-stabilized polyoxotungstate nanoclusters with SeO{sub 3}{sup 2-}/TeO{sub 3}{sup 2-} templates. From single polyoxoanions to inorganic hollow spheres in dilute solution

Energy Technology Data Exchange (ETDEWEB)

Chen, Wei-Chao; Wang, Xin-Long; Shao, Kui-Zhan; Su, Zhong-Min; Wang, En-Bo [Institute of Functional Materials Chemistry, Key Laboratory of Polyoxometalate Science of Ministry of Education, Department of Chemistry, Northeast Normal University, Changchun (China); Li, Hao-Long [State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University. Changchun (China)

2013-08-12

A versatile one-pot strategy was employed to synthesize three cerium(III)-stabilized polyoxotungstates nanoclusters by combining cerium linkers and SeO{sub 3}{sup 2-}/TeO{sub 3}{sup 2-} heteroanion templates: K{sub 32}Na{sub 16}[{(XO_3)W_1_0O_3_4}{sub 8}{Ce_8(H_2O)_2_0}(WO{sub 2}){sub 4}-(W{sub 4}O{sub 12})].n H{sub 2}O [X=Se, n=81 (1); X=Te, n=114 (2)] and K{sub 12}Na{sub 22}[{(SeO_3)W_1_0O_3_4}{sub 8}{Ce_8(H_2O)_2_0}(WO{sub 2}){sub 4}-{(W_4O_6)Ce_4(H_2O)_1_4(SeO_3)_4(NO_3)_2}] . 79 H{sub 2}O (3), which are the first lanthanide-containing polyoxotungstates with selenium or tellurium heteroatoms. The three clusters were characterized by single-crystal X-ray structure analysis, IR spectroscopy, thermogravimetric/differential thermal analysis, UV/Vis spectroscopy, ESI-MS, and X-ray photoelectron spectroscopy. Their electrochemical, photoluminescence, and magnetic properties were investigated. Their behavior in solution was studied by transmission electron microscopy, which showed that their single polyoxoanions assemble into intact, uniform-sized, purely inorganic hollow spheres in dilute water/acetone solution. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The influence of capping thioalkyl acid on the growth and photoluminescence efficiency of CdTe and CdSe quantum dots

International Nuclear Information System (INIS)

Aldeek, Fadi; Lambert, Jacques; Balan, Lavinia; Schneider, Raphael

2008-01-01

The influence of thioalkyl acid ligand was evaluated during aqueous synthesis at 100 deg. C and under hydrothermal conditions (150 deg. C) of CdTe and CdSe quantum dots (QDs). Experiments performed with 3-mercaptopropionic acid (MPA), 6-mercaptohexanoic acid (MHA) and 11-mercaptoundecanoic acid (MUA) demonstrated that the use of MHA and MUA allowed for the preparation of very small nanoparticles (0.6-2.5 nm) in carrying out the reaction under atmospheric pressure or in an autoclave and that the photophysical properties of QDs were dependent on the ligand and on the synthesis conditions. The influence of various experimental conditions, including the Te-to-Cd ratio, temperature, and precursor concentration, on the growth rate of CdTe or CdSe QDs has been systematically investigated. The fluorescence intensities of CdTe QDs capped with MPA, MHA, or MUA versus pH were also found to be related to the surface coverage of the nanoparticles.

High absorption coefficients of the CuSb(Se,Te2 and CuBi(S,Se2 alloys enable high-efficient 100 nm thin-film photovoltaics

Directory of Open Access Journals (Sweden)

Chen Rongzhen

2017-01-01

Full Text Available We demonstrate that the band-gap energies Eg of CuSb(Se,Te2 and CuBi(S,Se2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1−xTex2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω for CuSb(Se1−xTex2 is at ħω = Eg + 1 eV as much as 5–7 times larger than α(ω for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 − 150 nm, and the efficiency increases to ∼30% if the Auger effect is diminished.

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

Science.gov (United States)

Chen, Rongzhen; Persson, Clas

2017-06-01

We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1-xTex)2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1-xTex)2 is at ħω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 - 150 nm, and the efficiency increases to ˜30% if the Auger effect is diminished.

Controllable Growth of Monolayer MoS2 and MoSe2 Crystals Using Three-temperature-zone Furnace

Science.gov (United States)

Zheng, Binjie; Chen, Yuanfu

2017-12-01

Monolayer molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) have attracted a great attention for their exceptional electronic and optoelectronic properties among the two dimensional family. However, controllable synthesis of monolayer crystals with high quality needs to be improved urgently. Here we demonstrate a chemical vapor deposition (CVD) growth of monolayer MoS2 and MoSe2 crystals using three-temperature-zone furnace. Systematical study of the effects of growth pressure, temperature and time on the thickness, morphology and grain size of crystals shows the good controllability. The photoluminescence (PL) characterizations indicate that the as-grown monolayer MoS2 and MoSe2 crystals possess excellent optical qualities with very small full-width-half-maximum (FWHM) of 96 me V and 57 me V, respectively. It is comparable to that of exfoliated monolayers and reveals their high crystal quality. It is promising that our strategy should be applicable for the growth of other transition metal dichalcogenides (TMDs) monolayer crystals.

M = Mo, W; X = S, Se, Te) heterostructures

KAUST Repository

Zhang, Qingyun

2018-04-16

Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

Electric transport properties of the pentatelluride materials HfTe{sub 5} and ZrTe{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Tritt, T M; Wilson, M L; Littleton, R L [and others

1997-07-01

The authors have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe{sub 5} and ZrTe{sub 5}. They have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, T{sub p} where T{sub p} {approx} 80K for HfTe{sub 5} and T{sub p} {approx} 145K for ZrTe{sub 5}. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. These data are similar to behavior observed previously in these materials. They have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe{sub 5} and ZrTe{sub 5}. They have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 {micro}V/K and +65 {micro}V/K for HfTe{sub 5} and ZrTe{sub 5}, respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 {micro}V/K for HfTe{sub 5} and +35 {micro}V/K for ZrTe{sub 5}. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T {approx} 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 m{Omega}-cm and 24 m{Omega}-cm for HfTe{sub 5} and ZrTe{sub 5} respectively, compared to single crystal values of 0.35 m{Omega}-cm (HfTe{sub 5}) and 1.0 m{Omega}-cm (ZrTe{sub 5}). The authors have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. They will discuss these materials in relation to their potential as

Crystal structure and dynamics of K2-x(NH4)xSeO4 mixed crystals studied by x-ray and neutron scattering

International Nuclear Information System (INIS)

Smirnov, L.S.; Natkaniec, I.; Loose, A.

2006-01-01

The K 2-x (NH 4 ) x SeO 4 mixed crystals have been studied by powder X-ray and neutron diffraction and inelastic incoherent neutron scattering in a wide temperature range from 300 to 16 K. No phase transition is observed in (NH 4 ) 2 SeO 4 in the range from room temperature to 20 K. The reorientation potential barriers of ammonium ions in the K 2-x (NH 4 ) x SeO 4 mixed crystals increase with the increasing concentration of ammonium ions

Characterization of etch pit formation via the Everson-etching method on CdZnTe crystal surfaces from the bulk to the nanoscale

International Nuclear Information System (INIS)

Teague, Lucile C.; Duff, Martine C.; Cadieux, James R.; Soundararajan, Raji; Shick, Charles R.; Lynn, Kelvin G.

2011-01-01

A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

Magnetic and luminescent properties of vanadium-doped ZnSe crystals

Energy Technology Data Exchange (ETDEWEB)

Radevici, Ivan, E-mail: ivarad@utu.fi [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau (Moldova, Republic of); Nedeoglo, Natalia; Sushkevich, Konstantin [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau (Moldova, Republic of); Huhtinen, Hannu [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Nedeoglo, Dmitrii [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau (Moldova, Republic of); Paturi, Petriina [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)

2016-12-15

Magnetic and photoluminescence properties of vanadium-doped ZnSe crystals with impurity concentrations varied by changing the V amount in the source material from 0.03 to 0.30 at% are studied in 5–300 K temperature range. Investigation of magnetic properties shows that the studied concentrations of vanadium impurity that should not disturb crystal lattice are insignificant for observing ferromagnetic behaviour even at low temperatures. The contribution of V impurity to edge emission and its influence on infra-red emission are discussed. Similarities of magnetic and luminescent properties induced by vanadium and other transition metal impurities are discussed.

The half-metallic ferromagnetism character in Be1−xVxY (Y=Se and Te) alloys: An ab-initio study

International Nuclear Information System (INIS)

Sajjad, M.; Manzoor, Sadia; Zhang, H.X.; Noor, N.A.; Alay-e-Abbas, S.M.; Shaukat, A.; Khenata, R.

2015-01-01

Ab-initio calculations for V-doped BeSe and BeTe semiconductors are performed by means of all-electrons full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. The structural properties are optimized using the Wu-Cohen generalized gradient approximation functional, whereas modified Becke and Jhonson local density approximation functional has been employed for evaluating the spin-polarized electronic and magnetic properties. Magnetic stability at various doping concentrations in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering is investigated by comparing the minimum total energies and enthalpies of formation (ΔH). Studied band structures, density of states, total energy, exchange interactions and magnetic moments manifest both alloys with half-metallic ferromagnetic behavior. Moreover, their valance bands are found to be paired ferromagnetically with V atoms. Furthermore, it was observed that the magnetic moment of vanadium atom reduces from free space charge value due to p–d hybridization which yields small magnetic moments on the Be, Se and Te sites. - Highlights: • Density functional calculations for V-doped BeSe and BeTe are performed. • V-doped BeSe and BeTe are found to be stable half-metallic ferromagnetism. • Improved electronic properties are achieved using mBJLDA which confirm HMF. • The half-metallic gaps show non-linear variation with increasing dopant concentration

Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

DEFF Research Database (Denmark)

Wagner, Hans Peter; Kühnelt, M.; Langbein, Wolfgang Werner

1998-01-01

We have measured the absolute values of the second-harmonic generation (SHG) coefficient \\d\\ for the zinc-blende II-VI semiconductors ZnTe, ZnSe, and ZnS at room temperature. The investigated spectral region of the fundamental radiation lambda(F) ranges from 520 to 1321 nm using various pulsed...

Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots

International Nuclear Information System (INIS)

Lee, Ling; Dai, Yue-Ru; Yang, Chu-Shou; Fan, Wen-Chung; Chou, Wu-Ching

2015-01-01

Highlights: • The localized emission in zinc-blende ZnCdSe is induced by excess selenium. • An optimized growth is demonstrated as the VI/II ratio approaches unity. • Size-independent lifetimes are observed in ZnTe/ZnCdSe quantum dots. • Localized electrons in the capping layer dominate size-independent lifetimes. - Abstract: This study discovered the origin of deep level emission in zinc-blende ZnCdSe thin films grown by molecular beam epitaxy, in which a localization behavior was noticed. Pronounced deep level emission observed in films grown under a VI/II ratio of 1.74 (Se-accumulated regime) could be suppressed by a lower VI/II ratio of 1.04 (intermediate regime) and 0.74 (metal-rich regime). Hence the localized states could be correlated to excess selenium accumulated at the growth surface. The localized states also influence the carrier relaxation process of self-assembled ZnTe quantum dots embedded in a ZnCdSe matrix. Once quantum dots surmount the wetting layer, localized electrons in the capping layer dominate the type-II transition and exhibit size-independent lifetimes

Neutron Activation Resonance Integrals of 74Se, 78Se, 80Se, 81Br, 127I, 130Te, 138Ba, 140Ce, and 142Ce

International Nuclear Information System (INIS)

Ricabarra, M. D.; Turjanskl, R.; Ricabarra, G. H.; Bigham, C.B.

1968-01-01

A lithium-drift germanium γ-ray spectrometer has been used to make accurate intercomparisons of the ratio of resonance-integral to thermal-activation cross section by measuring cadmium ratios or relative activation rates in two different neutron spectra. The standard, gold, or secondary standard, indium, was mixed uniformly in the samples and the activities resolved with the spectrometer. Expressed as Westcott S 0 values, the results relative to S 0 = 17.7 for gold were as follows: 74 Se = 10.3 +± 0.1, 78 Se = 12.3 ± 0.3, 80 Sc = 2.65 ± 0.02, 81 Br = 24.3 ± 0.5, 127 I = 27.8 ± 0.5, 130 Te = 2.10 ± 0.07, 138 Ba = 0.649 ± 0.004, 140 Ce = 0.476 ± 0.003, 142 Ce = 0.865 ± 0.005. (author)

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

International Nuclear Information System (INIS)

Yuan, Feifei; Shi, Zhixiang; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Hühne, Ruben; Schultz, Ludwig; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina

2015-01-01

FeSe 0.5 Te 0.5 thin films were grown by pulsed laser deposition on CaF 2 , LaAlO 3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe 0.5 Te 0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density J c (θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no J c (θ) peaks for H||c were observed in films on CaF 2 and LaAlO 3 . J c (θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg–Landau approach with appropriate anisotropy ratio γ J . The scaling parameter γ J is decreasing with decreasing temperature, which is different from what we observed in FeSe 0.5 Te 0.5 films on Fe-buffered MgO substrates. (paper)

Fiber sensor on the basis of Ge26As17Se25Te32 glass for FEWS analysis

Science.gov (United States)

Velmuzhov, A. P.; Shiryaev, V. S.; Sukhanov, M. V.; Kotereva, T. V.; Churbanov, M. F.; Zernova, N. S.; Plekhovich, A. D.

2018-01-01

The high-purity Ge26As17Se25Te32 glass sample was prepared by chemical distillation purification method. This glass is characterized by high value of glass transition temperature (263°С), high optical transparency in the spectral range of 2-10 μm, and low content of residual impurities. The Ge26As17Se25Te32 glass rods were drawn into single-index fibers using the "rod" method and the single crucible technique. The optical losses in the 400 μm diameter fiber, fabricated by the "rod" method, were within 0.3-1 dB/m in the spectral range 5.2-9.3 μm. The minimum optical losses in the 320 μm diameter fiber, fabricated by the "crucible" technique, were 1.6-1.7 dB/m in the spectral range 6-8.5 μm. Using these Ge26As17Se25Te32 glass fibers as a sensor, the aqueous solutions of acetone (0-20 mol.%) and ethanol (0-90 mol.%) were analyzed by fiber evanescent wave spectroscopy. Peculiarities in the change of the integrated intensity and spectral position of absorption bands of these organic substances in dependence on the analyte composition and the length of the sensitive zone were established.

CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)

2012-09-20

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.

A study of Sn addition on bonding arrangement of Se-Te alloys using far infrared transmission spectroscopy

International Nuclear Information System (INIS)

Kumar, Rajneesh; Rangra, V. S.; Sharma, Parikshit; Katyal, S. C.; Sharma, Pankaj

2011-01-01

Far infrared transmission spectra of Se 92 Te 8-x Sn x (x = 0, 1, 2, 3, 4, 5) glassy alloys are obtained in the spectral range 50-600 cm -1 at room temperature. The results are interpreted in terms of the vibrations of the isolated molecular units in such a way so as to preserve fourfold and twofold coordination for Sn and chalcogen atoms (Se,Te), respectively. With the addition of Sn, Far-IR spectra shift toward high frequency side and some new bands start appearing. Sn atoms appear to substitute for the selenium atoms in the outrigger sites due to large bond formation probability. Theoretical calculations of bond energy, relative probability of bond formation, force constant, and wave number were also made to justify the result.

Electrochemical preparation and characterization of n-CdSe sub 0. 65 Te sub 0. 35 polycrystalline thin films: Influence of annealing

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, M T; Ortega, J [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

1989-12-01

CdSe{sub 0.65}Te{sub 0.35} thin films have been prepared by electrodeposition. The films were characterized by X-ray diffraction, optical and photoelectrochemical methods. The influence of annealing treatments on the physical parameters (grain size, d, donor concentration, N{sub D}, and hole diffusion length, L{sub P}) determining the photoelectrochemical behaviour of electrodeposited CdSe{sub 0.65}Te{sub 0.35} thin films in contact with sulfide/polysulfide electrolytes have been systematically studied. (orig.).

Random lasing of microporous surface of Cr2+:ZnSe crystal induced by femtosecond laser

International Nuclear Information System (INIS)

Yang, Xianheng; Feng, Guoying; Yao, Ke; Yi, Jiayu; Zhang, Hong; Zhou, Shouhuan

2015-01-01

We demonstrate a random lasing emission based on microporous surface of Cr 2+ :ZnSe crystal prepared by femtosecond pulsed laser ablation in high vacuum (below 5 × 10 −4 Pa). The scanning electron microscope results show that there are a mass of micropores with an average size of ∼13 μm and smaller ones with ∼1.2 μm on the surface of Cr 2+ :ZnSe crystal. The adjacent micropore spacing of the smaller micropores ranges from 1 μm to 5 μm. Under 1750 nm excitation of Nd:YAG (355 nm) pumped optical parametric oscillator, a random lasing emission with center wavelength of 2350 nm and laser-like threshold of 0.3 mJ/pulse is observed. The emission lifetime of 2350 nm laser reduces from 800 ns to 30 ns as the pump energy increases above threshold. The emission spectra and decay time of smooth surface, groove and microporous surface of Cr 2+ :ZnSe crystal are contrasted. The optional pump wavelength range is from 1500 nm to 1950 nm, which in accordance with the optical absorption property of Cr 2+ :ZnSe crystal. The peak position of excitation spectra is almost identical to the strongest absorption wavelength

Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals

International Nuclear Information System (INIS)

Ho, Ching-Hwa; Chen, Ying-Cen; Pan, Chia-Chi

2014-01-01

We have grown In 2 Se 3 layered-type crystals using chemical vapor transport method with ICl 3 as the transport agent. The as-grown crystals show two different color groups of black shiny for α-phase In 2 Se 3 and red to yellow for γ-phase In 2 Se 3 . High-resolution transmission electron micro scopy verifies crystalline state and structural polytype of the as-grown In 2 Se 3 . The results indicate that the α-In 2 Se 3 crystals present more crystalline states than those of the other amorphous γ-In 2 Se 3 . The amorphous effect on the advancing of optoelectronic property of γ-In 2 Se 3 shows erasable optical-memorized effect in the disordered and polycrystalline γ-In 2 Se 3 layers. Laser-induced photodarkening and annealed-recovery test verified that a reversible structural-phase transition of γ↔α can occur inside the γ-In 2 Se 3 . Thermoreflectance and Raman scattering measurements are carried out to identify the inter-phase transformation of the γ-In 2 Se 3 polycrystals using different heat treatments. Direct band gaps and Raman vibration modes for the γ- and α-In 2 Se 3 crystalline phases are, respectively, characterized and identified. The character of γ↔α inter-phase transition promotes feasible optical and optoelectronic applications of the γ-In 2 Se 3 material in optical memory, optics, and solar-energy devices

Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals

Science.gov (United States)

Ho, Ching-Hwa; Chen, Ying-Cen; Pan, Chia-Chi

2014-01-01

We have grown In2Se3 layered-type crystals using chemical vapor transport method with ICl3 as the transport agent. The as-grown crystals show two different color groups of black shiny for α-phase In2Se3 and red to yellow for γ-phase In2Se3. High-resolution transmission electron micro scopy verifies crystalline state and structural polytype of the as-grown In2Se3. The results indicate that the α-In2Se3 crystals present more crystalline states than those of the other amorphous γ-In2Se3. The amorphous effect on the advancing of optoelectronic property of γ-In2Se3 shows erasable optical-memorized effect in the disordered and polycrystalline γ-In2Se3 layers. Laser-induced photodarkening and annealed-recovery test verified that a reversible structural-phase transition of γ↔α can occur inside the γ-In2Se3. Thermoreflectance and Raman scattering measurements are carried out to identify the inter-phase transformation of the γ-In2Se3 polycrystals using different heat treatments. Direct band gaps and Raman vibration modes for the γ- and α-In2Se3 crystalline phases are, respectively, characterized and identified. The character of γ↔α inter-phase transition promotes feasible optical and optoelectronic applications of the γ-In2Se3 material in optical memory, optics, and solar-energy devices.

Photovoltaic effect in Bi{sub 2}TeO{sub 5} photorefractive crystal

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Ivan de, E-mail: ivan@ft.unicamp.brg; Capovilla, Danilo Augusto [GOMNI-Faculdade de Tecnologia/UNICAMP, Limeira (Brazil); Carvalho, Jesiel F.; Montenegro, Renata; Fabris, Zanine V. [Instituto de Física/Universidade Federal de Goiás, Goiânia (Brazil); Frejlich, Jaime [Instituto de Física “Gleb Wataghin”/UNICAMP, Campinas (Brazil)

2015-10-12

We report on the presence of a strong photovoltaic effect on nominally undoped photorefractive Bi{sub 2}TeO{sub 5} crystals and estimated their Glass photovoltaic constant and photovoltaic field for λ = 532 nm illumination. We directly measured the photovoltaic-based photocurrent in this material under λ = 532 nm wavelength laser light illumination and compared its behavior with that of a well known photovoltaic Fe-doped Lithium Niobate crystal. We also show the photovoltaic current to strongly depend on the polarization direction of light. Holographic diffraction efficiency oscillation during recording and the behavior of fringe-locked running holograms in self-stabilized experiments are also demonstrated here as additional indirect proofs of the photovoltaic nature of this material.

The microstructural changes of Ge2Sb2Te5 thin film during crystallization process

Science.gov (United States)

Xu, Jingbo; Qi, Chao; Chen, Limin; Zheng, Long; Xie, Qiyun

2018-05-01

Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.

Optical and structural characterization of GaSb and Te-doped GaSb single crystals

International Nuclear Information System (INIS)

Tirado-Mejia, L.; Villada, J.A.; Rios, M. de los; Penafiel, J.A.; Fonthal, G.; Espinosa-Arbelaez, D.G.; Ariza-Calderon, H.; Rodriguez-Garcia, M.E.

2008-01-01

Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported herein. Utilizing the photoreflectance technique, the band gap energy for doped samples was obtained at 0.814 eV. Photoluminescence (PL) spectra showed a peak at 0.748 eV that according to this research, belongs to electronic states of pure GaSb and not to the longitudinal optical (LO) phonon replica as has been reported by other authors. Analysis of the full width at half maximum (FWHM) values of X-ray diffraction, as well as micro-Raman peaks showed that the inclusion of Te decreases the crystalline quality

Fundamental absorption edge in CuIn5Se8 and CuGa3Se5 single crystals

International Nuclear Information System (INIS)

Leon, M.; Merino, J.M.; Levcenko, S.; Nateprov, A.; Tezlevan, V.; Arushanov, E.; Syrbu, N.N.

2006-01-01

Optical absorption spectra of CuIn 5 Se 8 and CuGa 3 Se 5 single crystals have been investigated. The energy gap E g for CuIn 5 Se 8 (CuGa 3 Se 5 ) was found to be varied from 1.27(1.79) to 1.21(1.71) eV in the temperature range between 10 and 300 K. The temperature dependence of E g was studied by means of the Einstein model and the Paessler model. The Einstein temperature {222(267)K}, the Debye temperature {310(380)K}, a dimensionless constant related to the electron-phonon coupling {1.62(2.65)} as well as an effective energy {20 (24) meV} and a cut-off phonon energy {35(39) meV} have been estimated for CuIn 5 Se 8 (CuGa 3 Se 5 ). It was also found that the major contribution of phonons to the shift of E g versus temperature in CuIn 5 Se 8 (CuGa 3 Se 5 ) is mainly from optical phonons. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

Science.gov (United States)

Kohri, Hitoshi; Yagasaki, Takayoshi

2018-02-01

Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

Science.gov (United States)

Kohri, Hitoshi; Yagasaki, Takayoshi

2018-06-01

Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

Energy Technology Data Exchange (ETDEWEB)

Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

2016-10-25

It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

The sublimation kinetics of GeSe single crystals

Science.gov (United States)

Irene, E. A.; Wiedemeier, H.

1975-01-01

The sublimation kinetics of (001) oriented GeSe single crystal platelets was studied by high-temperature mass spectroscopy, quantitative vacuum microbalance techniques, and hot stage optical microscopy. For a mean experimental temperature of 563 K, the activation enthalpy and entropy are found to equal 32.3 kcal/mole and 19.1 eu, respectively. The vaporization coefficient is less than unity for the range of test temperatures, and decreases with increasing temperature. The combined experimental data are correlated by means of a multistep surface adsorption mechanism.

Absorption measurement s in InSe single crystal under an applied electric field

International Nuclear Information System (INIS)

Ates, A.; Guerbulak, B.; Guer, E.; Yildirim, T.; Yildirim, M.

2002-01-01

InSe single crystal was grown by Bridgman-Stockberger method. Electric field effect on the absorption measurements have been investigated as a function of temperature in InSe single crystal. The absorption edge shifted towards longer wavelengths and decreased of intensity in absorption spectra under an electric field. Using absorption measurements, Urbach energy was calculated under an electric field. Applied electric field caused a increasing in the Urbach energy. At 10 K and 320 K, the first exciton energies were calculated as 1.350 and 1.311 eV for zero voltage and 1.334 and 1.301 eV for electric field respectively

(Li1−xFexOHFeSe Superconductors: Crystal Growth, Structure, and Electromagnetic Properties

Directory of Open Access Journals (Sweden)

Guo-Yong Zhang

2017-06-01

Full Text Available This review focuses on the growth of high-quality (Li1−xFexOHFeSe single crystals by a hydrothermal method using floating-zone-grown AxFe2−ySe2 (A = K, Rb, and Cs as precursors. The structure, superconductivity, and magnetic behavior of the obtained crystals are highly influenced by the growth conditions, such as time, temperature, and composition. A phase diagram with temperature against the c-lattice constant is summarized including the antiferromagnetic spin density wave, superconducting, and paramagnetic phases.

Dislocation-free etching figures in crystals of CdxHg1-xTe solid solutions

International Nuclear Information System (INIS)

Kholina, E.N.; Khazieva, R.A.; Bursak, S.S.; Nevskij, O.B.; Filatov, A.V.; Popovyan, G.Eh.; Suslov, E.V.; Prijmak, A.N.

1988-01-01

Using the method of chemical etching, etching figures formed in areas distributed over Cd x Hg 1-x Te crystal with increased content of impurities consisting of Si,Al,Na,K,Cl,Fe,Ti,Mg and S mainly are revealed. The size of impurity inclusions is >1μm, that is why they cannot be detected either by optical microscopy or local microroentgenospectral analysis. Formation and distribution of impurity inclusions are obviously defined by only the concentration of impurity atoms in the melt. The shape of etching figures does not depend on crystallographical orientation of the crystal-matrix

Anomalous X-ray diffraction from self-assembled PbSe/PbEuTe quantum dots

International Nuclear Information System (INIS)

Holy, V.; Schuelli, T.U.; Lechner, R.T.; Springholz, G.; Bauer, G.

2005-01-01

Anomalous X-ray scattering from self-assembled PbSe quantum dots embedded in Pb 1-x Eu x Te was used for the study of their structure. The measured reciprocal-space distributions of diffracted intensity were compared with simulations based on kinematical scattering theory and continuum elasticity. From the comparison, the mean chemical composition of the dots and their aspect ratio (height/width) were estimated

Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe

Directory of Open Access Journals (Sweden)

R. Pässler

2017-01-01

Full Text Available Detailed analytical and numerical analyses are performed for combinations of several complementary sets of measured heat capacities, for ZnSe and ZnTe, from the liquid-helium region up to 600 K. The isochoric (harmonic parts of heat capacities, CVh(T, are described within the frame of a properly devised four-oscillator hybrid model. Additional anharmonicity-related terms are included for comprehensive numerical fittings of the isobaric heat capacities, Cp(T. The contributions of Debye and non-Debye type due to the low-energy acoustical phonon sections are represented here for the first time by unprecedented, integral-free formulas. Indications for weak electronic contributions to the cryogenic heat capacities are found for both materials. A novel analytical framework has been constructed for high-accuracy evaluations of Debye function integrals via a couple of integral-free formulas, consisting of Debye’s conventional low-temperature series expansion in combination with an unprecedented high-temperature series representation for reciprocal values of the Debye function. The zero-temperature limits of Debye temperatures have been detected from published low-temperature Cp(T data sets to be significantly lower than previously estimated, namely, 270 (±3 K for ZnSe and 220 (±2 K for ZnTe. The high-temperature limits of the “true” (harmonic lattice Debye temperatures are found to be 317 K for ZnSe and 262 K for ZnTe.

Controlled synthesis of multi-morphology Te crystals by a convenient Lewis acid/base-assisted solvothermal method

International Nuclear Information System (INIS)

Wu Xiaoping; Yuan Lin; Zhou Shaomin; Lou Shiyun; Wang Yongqiang; Gao Tao; Liu YuBiao; Shi Xiaojing

2012-01-01

This paper reports on the controlled growth of multi-morphology Te crystals by a convenient Lewis acid/base-assisted solvothermal method for the first time. The morphological transformation from one-dimension (1D) nanostructures to 2D hierarchical flowerlike microarchitecture has been observed. The nanorods and nanowires with a well-defined crystallographical structure and the hierarchical flowers microarchitecture were obtained by changing the Lewis acids/bases. Lewis acids/bases were found to be crucial for the formation of the products by not only acting as the pH regulator but also as the shape controller, owing to their hydrolysis in the solvent to in situ form H + /OH − and hydrates. The results suggest that this should be an effective approach to the control the growth of t-Te crystals with interesting multiple morphologies, which are of interest for both theoretical investigations and practical applications.

Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2017-03-15

This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of increasing tellurium content on the electronic and optical properties of cadmium selenide telluride alloys CdSe{sub 1-x}Te{sub x}: An ab initio study

Energy Technology Data Exchange (ETDEWEB)

Reshak, Ali Hussain, E-mail: maalidph@yahoo.co.uk [Institute of Physical Biology-South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Kityk, I.V. [Electrical Engineering Department, Technical University of Czestochowa, Al. Armii Krajowej 17/19, Czestochowa (Poland); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique de la Matiere (LPQ3 M), universite de Mascara, Mascara 29000 (Algeria); Department of Physics and Astronomy, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Auluck, S. [National Physical Laboratory Dr. K S Krishnan Marg, New Delhi 110012 (India)

2011-06-16

Highlights: > Theoretical study of effect of vary Te content on band structure, density of states, linear and nonlinear optical susceptibilities of CdSe{sub 1-x}Te{sub x}. > Increasing Te content leads to a decrease in the energy band gap. > Significant enhancement of the electronic properties as a function of tellurium concentration - Abstract: An all electron full potential linearized augmented plane wave method, within a framework of GGA (EV-GGA) approach, has been used for an ab initio theoretical study of the effect of increasing tellurium content on the band structure, density of states, and the spectral features of the linear and nonlinear optical susceptibilities of the cadmium-selenide-telluride ternary alloys CdSe{sub 1-x}Te{sub x} (x = 0.0, 0.25, 0.5, 0.75 and 1.0). Our calculations show that increasing Te content leads to a decrease in the energy band gap. We find that the band gaps are 0.95 (1.76), 0.89 (1.65), 0.83 (1.56), 0.79 (1.44) and 0.76 (1.31) eV for x = 0.0, 0.25, 0.5, 0.75 and 1.0 in the cubic structure. As these alloys are known to have a wurtzite structure for x less than 0.25, the energy gaps are 0.8 (1.6) eV and 0.7 (1.55) eV for the wurtzite structure (x = 0.0, 0.25) for the GGA (EV-GGA) exchange correlation potentials. This reduction in the energy gaps enhances the functionality of the CdSe{sub 1-x}Te{sub x} alloys, at least for these concentrations, leading to an increase in the effective second-order susceptibility coefficients from 16.75 pm/V (CdSe) to 18.85 pm/V (CdSe{sub 0.75}Te{sub 0.25}), 27.23 pm/V (CdSe{sub 0.5}Te{sub 0.5}), 32.25 pm/V (CdSe{sub 0.25}Te{sub 0.75}), and 37.70 pm/V (CdTe) for the cubic structure and from 12.65 pm/V (CdSe) to 21.11 pm/V (CdSe{sub 0.75}Te{sub 0.25}) in the wurtzite structure. We find a nonlinear relationship between the absorption/emission energies and composition, and a significant enhancement of the electronic properties as a function of tellurium concentration. This variation will help in

Temperature dependences of photoconductivity of CdHgTe crystals with photoactive inclusions

International Nuclear Information System (INIS)

Vlasenko, A.I.; Vlasenko, Z.K.

1999-01-01

Temperature dependences of life time τ and spectral characteristics of photoconductivity for Cd x Hg 1-x Te crystals (x = 0.2) with photoactive inclusions are investigated. It is shown that the N-type character of effective lifetime temperature dependences in nonhomogeneous crystals, in particular, its sharp temperature activation in the region of transition from the impurity to the intrinsic conductivity is determined by not the Shockley-Read mechanism, but by the interband impact mechanism with changing effective geometrical sizes of recombination active regions under temperature increase. Within the frames of this model the smoothing of the non-monotone character of the photoconductivity spectral characteristics in the region of fundamental absorption under the heating is explained. The calculation results that are in qualitative agreement with the experimental data are presented [ru

Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

Science.gov (United States)

Su, Ching-Hua

2007-01-01

Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

On the Role of Boron in CdTe and CdZnTe Crystals

Science.gov (United States)

Pavesi, M.; Marchini, L.; Zha, M.; Zappettini, A.; Zanichelli, M.; Manfredi, M.

2011-10-01

It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium. The boron concentration in II-tellurides is negligible, and its contribution to transport mechanisms has not been studied yet. For the last few years the authors have been developing a new technique to grow CdZnTe by the vertical Bridgman technique, taking advantage of encapsulation by means of boron oxide. In this way, crystals characterized by large single grains, low etch pit density, and high resistivity have been obtained. Recently, x-ray detectors with state-of-the-art performance have been produced from such crystals. Boron contamination, as a consequence of this growth method, is quite low but at least one order of magnitude above values obtained with other growth techniques. Besides being a low-cost technique which is also suitable for large-scale mass production, the encapsulated vertical Bridgman technique is quite useful to prevent dislocations, grain boundaries, and stacking faults; for these reasons, careful characterization was performed to understand the effect of boron both on the electrical properties and on the spectroscopic performance of the final crystals. Our characterization is mainly based on low-temperature photoluminescence in addition to electrical current-voltage measurements, photostimulated current, and x-ray spectroscopy. The results indicate that boron behaves like other group III elements; in fact, boron forms a complex that does not affect the good performance of our x-ray detectors, even if it shows some properties which are typical of A-centers.

Analysis of Study Trend of Growth and Characterization of CdZnTe Single Crystal

International Nuclear Information System (INIS)

Lee, Kyu Hong; Ha, Jang Ho; Kim, Han Soo

2011-05-01

CdZnTe (CZT) alloys are very important semiconducting compounds due to their use in several strategic applications in medical, space, and security devices, especially, radiation detector. Specific problems of the bulk crystal growth are still to be solved. However, since industries require excellent bulk CZT crystals, a strong effort is being organized worldwide to optimize the growth process and obtain better material. This report presents the study trend of the bulk CZT crystal growth and characteristics. After the first section where the problems connected to the complicated phase diagram of CZT are presented, the second section describes the various general physical and chemical properties, together with the compensation problems of the CZT material. In the third section, various growth methods are described, paying attention to the defects generated in the different cases. Further, the annealing process which is an essential step for improving the crystal quality is described. In the last section, the general material characterization methods are presented, as a scientific approach for assessing the quality of the bulk crystal

Mechanism of conductivity type conversion in p-Hg1-xCdxTe crystals under low energy ion bombardment

International Nuclear Information System (INIS)

Bogoboyashchij, V.V.; Izhnin, I.I.

2000-01-01

Conditions giving rise to accelerated diffusion of Hg under bombardment of p-Hg 1-x Cd x Te by low-energy particles are analyzed and probable mechanisms of the phenomenon are suggested, permitting qualitative and quantitative agreement with experimental data. Analysis indicates that basic regularities of p-n-conversion during Hg 0.8 Cd 0.2 Te crystal bombardment by neutralized ions can be easily explained in the framework of traditional notions of mercury chemical diffusion in this material. The regularities stem from specific features of defect formation in Hg 0.8 Cd 0.2 Te, on the one hand, and from a high concentration of intrinsic electrons and holes, screening effectively the defective layer electric field, on the other hand. The high rate of conversion during ion bombardment compared with the rate of conversion during annealing in mercury vapors can be explained by the fact that a great number of nonequilibrium interstitial atoms of mercury, by far exceeding the value during thermal annealing, is crated near the surface of the crystal bombarded [ru

A first-principles study of II-VI (II = Zn; VI = O{,} S{,} Se{,} Te) semiconductor nanostructures

NARCIS (Netherlands)

Azpiroz, Jon M.; Infante, Ivan; Lopez, Xabier; Ugalde, Jesus M.; De Angelis, Filippo

2012-01-01

We present a systematic investigation of the structural{,} electronic and optical properties of wurtzite-like ZnX (X = O{,} S{,} Se{,} Te) nanostructures at the DFT/TDDFT level of theory. To provide a direct comparison with the experiment{,} realistic 1.0-1.5 nm quantum dots have been built up from

Dual-energy radiography of bone tissues using ZnSe-based scintielectronic detectors

International Nuclear Information System (INIS)

Grinyov, B.; Ryzhikov, V.; Lecoq, P.; Naydenov, S.; Opolonin, A.; Lisetskaya, E.; Galkin, S.; Shumeiko, N.

2007-01-01

Detectors of the scintillator-photodiode type were obtained on the basis of CsI(Tl), CdWO 4 and ZnSe(Te) crystals, and their comparative study was carried out, aiming at their use in X-ray computer tomography (CT). Because of their low afterglow level (10 ppm after 10 ms), CWO and ZnSe crystals are preferable for this application. A drawback of CWO is its lower (by 3 times) light output as compared with CsI(Tl). ZnSe has low transparence to intrinsic radiation; however, up to energies of 60-70 keV it is superior, as for the whole complex of its parameter, to materials traditionally used for CT detectors. The use of a dual-energy receiving-detecting circuit with a detector pair ZnSe/CsI or ZnSe/CdWO allows efficient distinction between muscular and bone tissues, which supports our earlier theoretical assumptions that this method could be successfully used for separate detection of materials differing in their effective atomic number Z eff and local density (e.g., calcium contents in bone densitometry)

Synthesis and crystal structure of a new neodymium(III) selenate-selenite: Nd2(SeO4)(SeO3)2(H2O)2

International Nuclear Information System (INIS)

Feng Meiling; Mao Jianggao

2005-01-01

The title new neodymium(III) selenate-selenite was obtained by hydrothermal reactions of neodymium(III) oxide, H 2 SeO 4 and 1,10-phenanthroline at 140 o C. Its structure was established by single-crystal X-ray diffraction. The title compound crystallizes in the monoclinic space group C2/c with cell parameters of a = 12.258(2) A, b 7.1024(15) A, c = 13.391(3) A, β = 104.250(2) o . The structure of Nd 2 (SeO 4 )(SeO 3 ) 2 (H 2 O) 2 is isomorphous with that of Er 2 (SeO 4 )(SeO 3 ) 2 (H 2 O) 2 , which was refined in the monoclinic space group C2 with the disordered selenate group. It features an ordered 3D network with channels along b-axis. The selenate or selenite groups alone can form a 2D layer with the Nd(III) ions. IR spectrum, TGA and luminescent studies have also been performed

Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

International Nuclear Information System (INIS)

Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

1991-01-01

Buried-heterostructure tunable PbEuSeTe/PbTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Improvements in the processing technique yielded lasers that show performance characteristics significantly better than those reported previously. A continuous wave (cw) operating temperature of 203 K was realized, which is the highest cw operating temperature ever reported for lead-chalcogenides diode lasers. This laser exhibited exceptionally low-threshold currents of 1.4 mA at 90 K and 43 mA at 160 K with single-mode operation for injection currents up to 30I th and 0.18 mW power at 100 K. The usefulness of the laser, when operating cw at 200 K, was demonstrated by the ability to perform high-resolution spectroscopy of a low-pressure CO 2 gas sample

Random lasing of microporous surface of Cr{sup 2+}:ZnSe crystal induced by femtosecond laser

Energy Technology Data Exchange (ETDEWEB)

Yang, Xianheng; Feng, Guoying, E-mail: guoing-feng@scu.edu.cn, E-mail: zhoush@scu.edu.cn; Yao, Ke; Yi, Jiayu; Zhang, Hong [College of Electronics and Information Engineering, Sichuan University, Chengdu 610065 (China); Zhou, Shouhuan, E-mail: guoing-feng@scu.edu.cn, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, Chengdu 610065 (China); North China Research Institute of Electro-Optics, Beijing 100015 (China)

2015-06-15

We demonstrate a random lasing emission based on microporous surface of Cr{sup 2+}:ZnSe crystal prepared by femtosecond pulsed laser ablation in high vacuum (below 5 × 10{sup −4} Pa). The scanning electron microscope results show that there are a mass of micropores with an average size of ∼13 μm and smaller ones with ∼1.2 μm on the surface of Cr{sup 2+}:ZnSe crystal. The adjacent micropore spacing of the smaller micropores ranges from 1 μm to 5 μm. Under 1750 nm excitation of Nd:YAG (355 nm) pumped optical parametric oscillator, a random lasing emission with center wavelength of 2350 nm and laser-like threshold of 0.3 mJ/pulse is observed. The emission lifetime of 2350 nm laser reduces from 800 ns to 30 ns as the pump energy increases above threshold. The emission spectra and decay time of smooth surface, groove and microporous surface of Cr{sup 2+}:ZnSe crystal are contrasted. The optional pump wavelength range is from 1500 nm to 1950 nm, which in accordance with the optical absorption property of Cr{sup 2+}:ZnSe crystal. The peak position of excitation spectra is almost identical to the strongest absorption wavelength.

Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application

International Nuclear Information System (INIS)

Ji, Xinglong; Zheng, Yonghui; Zhou, Wangyang; Wu, Liangcai; Cao, Liangliang; Zhu, Min; Rao, Feng; Song, Zhitang; Feng, Songlin

2015-01-01

In this paper, V 0.21 Sb 2 Te 3 (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb 2 Te 3 and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted in the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10 4 cycles makes VST a promising candidate for phase-change memory applications

Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6, the new tellurite halides of the tetragonal Rb_6LiNd_1_1[SeO_3]_1_2Cl_1_6 structure type

International Nuclear Information System (INIS)

Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.; Sklovsky, Dmitry E.; Berdonosov, Peter S.; Olenev, Andrei V.; Zhou, Wuzong; Lightfoot, Philip; Dolgikh, Valery A.

2015-01-01

Two new rare-earth – alkali – tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs_7Sm_1_1[TeO_3]_1_2Cl_1_6 (I) and Rb_7Nd_1_1[TeO_3]_1_2Br_1_6 (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn_1_1(TeO_3)_1_2] and [M_6X_1_6] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted. - Graphical abstract: Two new rare-earth – alkali – tellurium oxide halides were predicted and synthesized. - Highlights: • Two new rare-earth – alkali – tellurium oxide halides were synthesized. • They adopt slab structure of rare earth-tellurium-oxygen and CsCl-like slabs. • The Br-based CsCl-like slabs have been observed first in this layered family.

Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

Energy Technology Data Exchange (ETDEWEB)

Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)

2015-08-28

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

Density functional study of BiSbTeSe{sub 2} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Mohammadpourrad, Zahra; Abolhassani, Mohammadreza [Department of Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2017-08-15

In this work, using density functional theory calculations, we have investigated the band topology of bulk BiSbTeSe{sub 2} and its thin film electronic properties in several thicknesses. It is one member of the quaternary compounds Bi{sub 2-x}Sb{sub x}Te{sub 3-y}Se{sub y} (BSTS) with the best intrinsic bulk insulating behavior. Based on our calculations we have found that a band inversion at Γ-point is induced when spin-orbit coupling is turned on, with an energy gap of about 0.318 eV. The film thickness has an effect on the surface states such that a gap opens at Dirac point in 6 quintuple-layers film and with decrease in thickness, the magnitude of the gap increases. The atomic contributions have been mapped out for the first few layers of thin films to demonstrate the surface states. The relative charge density has been calculated layer-wise and the penetration depth of the surface states into the bulk region is found to be about 2.5-3.5 quintuple layers, depending on the termination species of thin films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Syntheses and characterization of thin films of Te94Se6 nanoparticles for semiconducting and optical devices

International Nuclear Information System (INIS)

Salah, Numan; Habib, Sami S.; Memic, Adnan; Alharbi, Najlaa D.; Babkair, Saeed S.; Khan, Zishan H.

2013-01-01

Thin films of Te 94 Se 6 nanoparticles were synthesized using the physical vapor condensation technique at different argon (Ar) pressures. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy, absorption spectrum, photoluminescence (PL) and Raman spectroscopy. XRD results show that the as-grown films have a polycrystalline structure. SEM images display uniform nanoparticles in these films where the size increases from ∼ 12 to about 60 nm by decreasing Ar pressure from 667 to 267 Pa. These as-grown thin films were found to have direct band gaps, whose value decreases with increasing particle size. The absorption and extinction coefficients for these films were also investigated. PL emission spectra exhibit three bands peaking at 666, 718 and 760 nm, while Raman spectra displayed three bands located at 123, 143 and 169 cm −1 . No significant changes are observed in positions or intensities of these bands by decreasing the Ar pressure, except that of the last band of PL; where the intensity increases. The obtained results on this Te 94 Se 6 nanomaterial especially its controlled direct bandgap might be useful for development of optical disks and other semiconducting devices. - Highlights: ► Thin films of Te 94 Se 6 nanoparticles were grown at different argon (Ar) pressures. ► Size of the nanoparticles increased by decreasing Ar pressure. ► They have direct band gap, whose value decreases by increasing the particle size. ► These nanomaterials might be useful for development of semiconducting devices

Thermally-induced crystallization behaviour of 80GeSe2–20Ga2Se3 glass as probed by combined X-ray diffraction and PAL spectroscopy

International Nuclear Information System (INIS)

Shpotyuk, O.; Calvez, L.; Petracovschi, E.; Klym, H.; Ingram, A.; Demchenko, P.

2014-01-01

Highlights: • Chalcogenide Ge–Ga–Se glasses were annealed at 380 °C for 10, 25 and 50 h. • Crystallization of glasses during annealing indicates formation of crystals. • Structural changes are described by two-state positron trapping model. • Modification leading to nucleation and fragmentation of free volume of glasses. • The Ge–Ga–Se systems cannot be classified as typical pseudo-binary system. -- Abstract: Crystallization behaviour of 80GeSe 2 –20Ga 2 Se 3 glass caused by thermal annealing at 380 °C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section

Energy loss distributions of 7 TeV protons channeled in a bent silicon crystals

Directory of Open Access Journals (Sweden)

Stojanov Nace

2013-01-01

Full Text Available The energy loss distributions of relativistic protons axially channeled through the bent Si crystals, with the constant curvature radius, R = 50 m, are studied here. The proton energy is 7 TeV and the thickness of the crystal is varied from 1 mm to 5 mm, which corresponds to the reduced crystal thickness, L, from 2.1 to 10.6, respectively. The proton energy was chosen in accordance with the large hadron collider project, at the European Organization for Nuclear Research, in Geneva, Switzerland. The energy loss distributions of the channeled protons were generated by the computer simulation method using the numerical solution of the proton equations of motion in the transverse plane. Dispersion of the proton scattering angle caused by its collisions with the crystal’s electrons was taken into account. [Projekat Ministarstva nauke Republike Srbije, br. III 45006

Synthesis and crystal structure of three new quaternary compounds in the system (Cu-III-Se{sub 2}){sub 1-x}ZnSe{sub x} (III = Al, Ga, In), formed by Zn incorporation in Cu-III-Se{sub 2} chalcopyrite s

Energy Technology Data Exchange (ETDEWEB)

Delgado, G. E. [Universidad de Los Andes, Facultad de Ciencias, Departamento de Quimica, Laboratorio de Cristalografia, 5101 Merida (Venezuela, Bolivarian Republic of); Grima G, P.; Quintero, M., E-mail: gerzon@ula.ve [Universidad de Los Andes, Facultad de Ciencias, Departamento de Fisica, Centro de Estudios de Semiconductores, 5101 Merida (Venezuela, Bolivarian Republic of)

2016-11-01

The crystal structure of the chalcogenide alloys CuZnAlSe{sub 3}, CuZnCaSe{sub 3} and CuZnInSe{sub 3}, new members of the system I-II-III-VI{sub 3}, were characterized using X-ray powder diffraction data. All materials crystallize in the tetragonal space group P{sub -4} 2{sub c} (N 112) with a CuFeInSe{sub 3}- type structure. (Author)

Crystal structure and magnetic properties of the Ba3TeCo3P2O14, Pb3TeCo3P2O14, and Pb3TeCo3V2O14 langasites

DEFF Research Database (Denmark)

Krizan, J.W.; de la Cruz, C.; Andersen, Niels Hessel

2013-01-01

We report the structural and magnetic characterizations of Ba3TeCo3P2O14, Pb3TeCo3P2O14, and Pb3TeCo3V2O14, compounds that are based on the mineral dugganite, which is isostructural to langasites. The magnetic part of the structure consists of layers of Co2+ triangles. Nuclear and magnetic...... structures were determined through a co-refinement of synchrotron and neutron powder diffraction data. In contrast to the undistorted P321 langasite structure of Ba3TeCo3P2O14, a complex structural distortion yielding a large supercell is found for both Pb3TeCo3P2O14 and Pb3TeCo3V2O14. Comparison...... of the three compounds studied along with the zinc analog Pb3TeZn3P2O14, also characterized here, suggests that the distortion is driven by Pb2+ lone pairs; as such, the Pb compounds crystallize in a pyroelectric space group, P2. Magnetic susceptibility, magnetization, and heat capacity measurements were...

Ab initio study of point defects in PbSe and PbTe: Bulk and nanowire

Energy Technology Data Exchange (ETDEWEB)

Wrasse, E. O. [Instituto de Física, Universidade Federal de Uberlândia, 38408-100, Uberlândia, MG, Brazil and Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Venezuela, P. [Instituto de Física, Universidade Federal Fluminense, 24210-346, Niteroi, RJ (Brazil); Baierle, R. J., E-mail: rbaierle@smail.ufsm.br [Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil)

2014-11-14

First principles investigations, within the spin-polarized density functional theory, are performed to study energetic stability and electronic properties of point defects (vacancies and antisites) in PbSe and PbTe: bulk and nanowire (NW). Our results show that the energetic stability of these defects is ruled by relaxation process. These defects have lower formation energies in the nanowire structures as compared to the bulk, being more stable in the surface of the NWs. We also show that in the bulk system only one charge state is stable, otherwise, due to the larger band gaps, more than one charge state may be stable in the NWs. In addition, we have investigated how the presence of intrinsic defects affects the electronic properties of bulk and NW systems. Vacancies give rise to new electronic states near to the edges of the valence and conduction bands while the energetic position of the electronic states from antisites depends on the charge state, being localized inside the band gap or near the edges of the valence or conduction bands. We discuss how these changes in the electronic properties due to intrinsic defects may affect the thermoelectric properties of PbSe and PbTe NWs.

Electric field influence on exciton absorption of Er doped and undoped InSe single crystals

International Nuclear Information System (INIS)

Guerbulak, B; Kundakci, M; Ates, A; Yildirim, M

2007-01-01

Undoped InSe and Er doped InSe (InSe:Er) single crystals were grown by using the Stockbarger method. Ingots had no cracks and voids on the surface. The absorption measurements were carried out in InSe and InSe:Er samples for U=0 and U=30 V in the temperature range 10-320 K with a step of 10 K. Electric field effects on excitons are observed in InSe and InSe:Er single crystals. The absorption edge shifted towards longer wavelengths and decreased intensity in absorption spectra under an electric field E≅5.9 kV cm -1 . The applied electric field caused a shifting and a decreasing of intensity in the absorption spectra. The shifting of the absorption edge can be explained on the basis of the Franz-Keldysh effect (FKE) or thermal heating of the sample under the electric field. At 10 and 320 K, the first exciton energies for InSe were calculated as 1.336 and 1.291 eV for zero voltage and 1.331 and 1.280 eV for electric field and InSe:Er as 1.329 and 1.251 eV for zero voltage and 1.318 and 1.248 eV for electric field, respectively

Physical reasons of emission transformation in infrared CdSeTe/ZnS quantum dots at bioconjugation

Science.gov (United States)

Torchynska, T. V.

2015-04-01

The core/shell CdSeTe/ZnS quantum dots (QDs) with emission at 780-800 nm (1.55-1.60 eV) have been studied by means of photoluminescence (PL) and Raman scattering methods in the nonconjugated state and after conjugation to different antibodies (Ab): (i) mouse monoclonal [8C9] human papilloma virus Ab, anti-HPV 16-E7 Ab, (ii) mouse monoclonal [C1P5] human papilloma virus HPV16 E6+HPV18 E6 Ab, and (iii) pseudo rabies virus (PRV) Ab. The transformations of PL and Raman scattering spectra of QDs, stimulated by conjugated antibodies, have been revealed and discussed. The energy band diagram of core/shell CdSeTe/ZnS QDs has been designed that helps to analyze the PL spectra and their transformations at the bioconjugation. It is shown that the core in CdSeTe/ZnS QDs is complex and including the type II quantum well. The last fact permits to explain the nature of infrared (IR) optical transitions (1.55-1.60 eV) and the high energy PL band (1.88-1.94 eV) in the nonconjugated and bioconjugated QDs. A set of physical reasons has been analyzed with the aim to explain the transformation of PL spectra in bioconjugated QDs. Finally it is shown that two factors are responsible for the PL spectrum transformation at bioconjugation to charged antibodies: (i) the change of energy band profile in QDs and (ii) the shift of QD energy levels in the strong quantum confinement case. The effect of PL spectrum transformation is useful for the study of QD bioconjugation to specific antibodies and can be a powerful technique for early medical diagnostics.

Scintillation properties of semiconducting {sup 6}LiInSe{sub 2} crystals to ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Wiggins, Brenden [Y-12 National Security Complex, Oak Ridge, TN (United States); Vanderbilt University, Nashville, TN (United States); Groza, Michael; Tupitsyn, Eugene [Fisk University, Nashville, TN (United States); Lukosi, Eric [University of Tennessee, Knoxville, TN (United States); Stassun, Keivan; Burger, Arnold [Vanderbilt University, Nashville, TN (United States); Fisk University, Nashville, TN (United States); Stowe, Ashley [Y-12 National Security Complex, Oak Ridge, TN (United States); Vanderbilt University, Nashville, TN (United States); University of Tennessee, Knoxville, TN (United States)

2015-11-21

{sup 6}LiInSe{sub 2} has gained attention recently as a semiconducting thermal neutron detector. As presented herein, the chalcogenide compound semiconductor also detects incident neutrons via scintillation, making {sup 6}LiInSe{sub 2} the only lithium containing semiconductor to respond to neutrons via both detection mechanisms. Both yellow and red crystals, which appear in the literature, were investigated. Only the yellow crystal responded favorably to ionizing radiation, similar to the semiconducting operation utilizing electrodes. The obtained light yield for yellow crystals is 4400 photons/MeV, referenced to Bi{sub 4}Ge{sub 3}O{sub 12} (BGO).The estimated thermal neutron light yield was 21,000 photons/thermal neutron. The two measured decay time components were found to be 31±1 ns (49%) and 143±9 ns (51%).This crystal provides efficient, robust detection of neutrons via scintillation with respectable light yield and rapid response, enabling its use for a broad array of neutron detection applications.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure

Science.gov (United States)

Filatov, E. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

2012-02-01

The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude) in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe layer.

Ab-initio calculations of Co-based diluted magnetic semiconductors Cd 1-xCoxX (X=S, Se, Te)

KAUST Repository

Saeed, Yasir; Nazir, Safdar; Shaukat, Ali; Reshak, A. H.

2010-01-01

Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of IIVI compounds Cd1-xCoxX (X=S, Se, Te) at x=0.25. From the calculated results

Thermoelectric properties of Bi2SexTe3-x prepared by Bridgman method

International Nuclear Information System (INIS)

Keawprak, N.; Lao-ubol, S.; Eamchotchawalit, C.; Sun, Z.M.

2011-01-01

Highlights: → Bi 2 Se x Te 3-x with various Se concentrations grown by Bridgman method was prepared. → The electrical conductivity was found to decrease with increasing Se content. → The Seebeck coefficient was not influenced by the substitution of Te with Se. → The electronic thermal conductivity exhibited a decrease with increasing Se. → The highest of dimensionless figure of merit (ZT) was measure to be 1.2. - Abstract: Bi 2 Se x Te 3-x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 x 10 5 S m -1 at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h -1 . The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K -1 at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m -1 K -1 at x = 0.36. The electronic part of κ, κ el , showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.

Photoconductivity of Se85-xTe15Hgx thin films

International Nuclear Information System (INIS)

Chaudhary, Neetu; Bahishti, Adam A.; Zulfequar, M.

2012-01-01

The photoconductive properties such as dark conductivity, steady state and transient characteristics of a-Se 85-x Te 15 Hg x thin films, prepared by thermal vacuum evaporation technique have been studied in the temperature range 312-380 K. Analysis of data shows that the activation energy of dark current is greater as compared to the activation energy of photocurrent. The activation energy increases at higher concentration of Hg which shows that the defect density of states decreases. Analysis of intensity dependent photoconductivity shows that the bimolecular recombination is predominant. The transient photoconductivity shows that the carrier lifetime decreases with the increase in Hg concentration and increases at higher concentration of Hg. This decrease is due to the transition trapping process. Further the photosensitivity and carrier lifetime increases at higher concentration of Hg which also confirms that the density of defect states decreases.