Application of closed queueing network in the performance of a pick-and-pass order picking system

NARCIS (Netherlands)

Gaast, van der J.P.; Koster, de M.B.M.; Adan, I.J.B.F.; Resing, J.A.C.

2011-01-01

This paper presents a method for obtaining approximate solutions for pick-and-pass order picking systems with multiple classes of orders. The pick-and-pass system is decomposed into an entrance station, conveyor nodes and pick stations. A customer order needs to visit multiple pick stations, but the

Development of a doorframe-typed swinging seedling pick-up device for automatic field transplantation

Energy Technology Data Exchange (ETDEWEB)

Han, H.; Mao, H.; Hu, J.; Tian, K.

2015-07-01

A doorframe-typed swing seedling pick-up device for automatic field transplanters was developed and evaluated in a laboratory. The device, consisting of a path manipulator and two grippers, can move the pins slowly to extract seedlings from the tray cells and return quickly to the pick-up point for the next extraction. The path manipulator was constructed with the creative design of type-Ⅱ mechanism combination in series. It consists of an oscillating guide linkage mechanism and a grooved globoidal cam mechanism. The gripper is a pincette-type mechanism using the pick-up pins to penetrate into the root mass for seedling extraction. The dynamic analysis of the designed seedling pick-up device was simulated with ADAMS software. Being the first prototype, various performance tests under local production conditions were conducted to find out the optimal machine operation parameters and transplant production conditions. As the gripper with multiple fine pins was moved by the swing pick-up device, it can effectively complete the transplanting work cycle of extracting, transferring, and discharging a seedling. The laboratory evaluation showed that the pick-up device equipped with two grippers can extract 80 seedlings/min with a 90% success and a 3% failure in discharging seedlings, using 42-day-old tomato plantlets. The quality of extracting seedlings was satisfactory. (Author)

High-performance integrated pick-up circuit for SPAD arrays in time-correlated single photon counting

Science.gov (United States)

Acconcia, Giulia; Cominelli, Alessandro; Peronio, Pietro; Rech, Ivan; Ghioni, Massimo

2017-05-01

The analysis of optical signals by means of Single Photon Avalanche Diodes (SPADs) has been subject to a widespread interest in recent years. The development of multichannel high-performance Time Correlated Single Photon Counting (TCSPC) acquisition systems has undergone a fast trend. Concerning the detector performance, best in class results have been obtained resorting to custom technologies leading also to a strong dependence of the detector timing jitter from the threshold used to determine the onset of the photogenerated current flow. In this scenario, the avalanche current pick-up circuit plays a key role in determining the timing performance of the TCSPC acquisition system, especially with a large array of SPAD detectors because of electrical crosstalk issues. We developed a new current pick-up circuit based on a transimpedance amplifier structure able to extract the timing information from a 50-μm-diameter custom technology SPAD with a state-of-art timing jitter as low as 32ps and suitable to be exploited with SPAD arrays. In this paper we discuss the key features of this structure and we present a new version of the pick-up circuit that also provides quenching capabilities in order to minimize the number of interconnections required, an aspect that becomes more and more crucial in densely integrated systems.

Lubricant Film Breakdown and Material Pick-Up in Sheet Forming of Advanced High Strength Steels and Stainless Steels when Using Environmental Friendly Lubricants

DEFF Research Database (Denmark)

Ceron, Ermanno; Olsson, M.; Bay, Niels

2014-01-01

chemically with the tool and workpiece material forming thin films, which adhere strongly to the surfaces and reduce the tendency to metal-metal contact and material pick-up. Production tests of new, environmentally benign tribo-systems are, however, costly and laboratory tests are preferred as a preliminary...... the tribological performance, i.e. tendency to material pick-up and galling, of the evaluated tribo-systems. Moreover the SEM analysis shows that different workpiece materials result in different types of material pick-up....

Interaction of intersteller pick-up ions with the solar wind

International Nuclear Information System (INIS)

Mobius, E.; Klecker, B.; Hovestadt, D.; Scholer, M.

1988-01-01

The interaction of interstellar pick-up ions with the solar wind is studied by comparing a model for the velocity distribution function of pick-up ions with actual measurements of He + ions in the solar wind. The model includes the effects of pitch-angle diffusion due to interplanetary Alfven waves, adiabatic deceleration in the expanding solar wind and the radial variation of the source function. It is demonstrated that the scattering mean free path is in the range ≤0.1 AU and that energy diffusion can be neglected as compared with adiabatic deceleration. The effects of adiabatic focusing, of the radial variation of the neutral density and of an variation of the solar wind velocity with distance from the Sun are investigated. With the correct choice of these parameters the authors can model the measured energy spectra of the pick-up ions does not vary with the solar wind velocity and the direction of the interplanetary magnetic field for a given local neutral gas density and ionization rate. Therefore, the comparison of the model distributions with the measurements leads to a quantitative determination of the local interstellar gas density

Pick up screens for x-ray image intensifier tubes employing evaporated activated scintillator layer

International Nuclear Information System (INIS)

Spicer, W.E.

1976-01-01

The present invention relates in general to methods for making pick-up screens for x-ray image intensifier tubes and, more particularly, to an improved method wherein the x-ray fluorescent phosphor screen element is formed by evaporation of an alkali metal halide material in vacuum and condensing the evaporated material on an x-ray transparent portion of the x-ray intensifier tube, whereby a curved x-ray image pick-up screen is formed which has improved quantum efficiency and resolution. Such improved x-ray image intensifier tubes are especially useful for, but not limited in use to x-ray systems and for intensifying gamma ray images obtained in applications of nuclear medicine. 7 claims, 5 drawing figures

Tracked "Pick-Up" Ultrasound for Robot-Assisted Minimally Invasive Surgery.

Science.gov (United States)

Schneider, Caitlin; Nguan, Christopher; Rohling, Robert; Salcudean, Septimiu

2016-02-01

We present a novel "pick-up" ultrasound transducer for intraabdominal robot-assisted minimally invasive surgery. Such a "pick-up" ultrasound transducer is inserted through an abdominal incision at the beginning of the procedure and remains in the abdominal cavity throughout, eliminating the need for a dedicated port or a patient bedside surgical assistant. The transducer has a handle that can be grasped in a repeatable manner using a da Vinci Prograsp tool, allowing the transducer to be accurately manipulated by the surgeon using the da Vinci Robot. This is one way to enable 3-D tracking of the transducer, and, thus, mapping of the vasculature. The 3-D vascular images can be used to register preoperative CT to intraoperative camera images. To demonstrate the feasibility of the approach, we use an ultrasound vessel phantom to register a CT surface model to extracted ultrasound vessel models. The 3-D vascular phantom images are generated by segmenting B-mode images and tracking the pick-up ultrasound transducer with the da Vinci kinematics, internal electromagnetic sensor, or visible fiducials suitable for camera tracking. Reconstruction results using da Vinci kinematics for tracking give a target registration error of 5.4 ± 1.7 mm.

Collision free pick up and movement of large objects

International Nuclear Information System (INIS)

Drotning, W.D.; McKee, G.R.

1998-01-01

An automated system is described for the sensor-based precision docking and manipulation of large objects. Past work in the remote handling of large nuclear waste containers is extensible to the problems associated with the handling of large objects such as coils of flat steel in industry. Computer vision and ultrasonic proximity sensing as described here are used to control the precision docking of large objects, and swing damped motion control of overhead cranes is used to control the position of the pick up device and suspended payload during movement. Real-time sensor processing and model-based control are used to accurately position payloads

Revisiting the theory of the evolution of pick-up ion distributions: magnetic or adiabatic cooling?

Directory of Open Access Journals (Sweden)

H. J. Fahr

2007-01-01

Full Text Available We study the phasespace behaviour of heliospheric pick-up ions after the time of their injection as newly created ions into the solar wind bulk flow from either charge exchange or photoionization of interplanetary neutral atoms. As interaction with the ambient MHD wave fields we allow for rapid pitch angle diffusion, but for the beginning of this paper we shall neglect the effect of quasilinear or nonlinear energy diffusion (Fermi-2 acceleration induced by counterflowing ambient waves. In the up-to-now literature connected with the convection of pick-up ions by the solar wind only adiabatic cooling of these ions is considered which in the solar wind frame takes care of filling the gap between the injection energy and energies of the thermal bulk of solar wind ions. Here we reinvestigate the basics of the theory behind this assumption of adiabatic pick-up ion reactions and correlated predictions derived from it. We then compare it with the new assumption of a pure magnetic cooling of pick-up ions simply resulting from their being convected in an interplanetary magnetic field which decreases in magnitude with increase of solar distance. We compare the results for pick-up ion distribution functions derived along both ways and can point out essential differences of observational and diagnostic relevance. Furthermore we then include stochastic acceleration processes by wave-particle interactions. As we can show, magnetic cooling in conjunction with diffusive acceleration by wave-particle interaction allows for an unbroken power law with the unique power index γ=−5 beginning from lowest velocities up to highest energy particles of about 100 KeV which just marginally can be in resonance with magnetoacoustic turbulences. Consequences for the resulting pick-up ion pressures are also analysed.

Revisiting the theory of the evolution of pick-up ion distributions: magnetic or adiabatic cooling?

Directory of Open Access Journals (Sweden)

H. J. Fahr

2008-01-01

Full Text Available We study the phasespace behaviour of heliospheric pick-up ions after the time of their injection as newly created ions into the solar wind bulk flow from either charge exchange or photoionization of interplanetary neutral atoms. As interaction with the ambient MHD wave fields we allow for rapid pitch angle diffusion, but for the beginning of this paper we shall neglect the effect of quasilinear or nonlinear energy diffusion (Fermi-2 acceleration induced by counterflowing ambient waves. In the up-to-now literature connected with the convection of pick-up ions by the solar wind only adiabatic cooling of these ions is considered which in the solar wind frame takes care of filling the gap between the injection energy and energies of the thermal bulk of solar wind ions. Here we reinvestigate the basics of the theory behind this assumption of adiabatic pick-up ion reactions and correlated predictions derived from it. We then compare it with the new assumption of a pure magnetic cooling of pick-up ions simply resulting from their being convected in an interplanetary magnetic field which decreases in magnitude with increase of solar distance. We compare the results for pick-up ion distribution functions derived along both ways and can point out essential differences of observational and diagnostic relevance. Furthermore we then include stochastic acceleration processes by wave-particle interactions. As we can show, magnetic cooling in conjunction with diffusive acceleration by wave-particle interaction allows for an unbroken power law with the unique power index γ=−5 beginning from lowest velocities up to highest energy particles of about 100 KeV which just marginally can be in resonance with magnetoacoustic turbulences. Consequences for the resulting pick-up ion pressures are also analysed.

High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

Science.gov (United States)

Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

2010-12-01

High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

Hibernia field construction pace picks up speed

International Nuclear Information System (INIS)

Anon.

1992-01-01

This paper reports that the pace of construction is increasing for the $5.2 billion (Canadian) Hibernia oil field development project off Newfoundland with a new partner close to signing on. Texaco, Inc. is reported ready to pick up a 25% interest in the project within a month. Construction activity for offshore systems was cut 50% last February when Gulf Canada Resources Inc. The it planned to withdraw from its 25% interest in Hibernia. Since then, remaining interest owners Mobil Oil Canada Ltd., Chevron Canada Resources Ltd., and Petro-Canada have been seeking new partners. The effort has focused on Texaco with Canadian Energy Minister Jake Epp playing a role in talks. Hibernia's construction work force has risen to 850 from a low of 600. A spokesman for Hibernia Management and Development Co., project manager, the a steady increase in the work force is planned

Pick-Up Ion Instabilities at Planetary Magnetospheres

Science.gov (United States)

Strangeway, Robert J.; Sharber, James (Technical Monitor)

2001-01-01

This effort involved the analysis of low frequency waves as observed by the Galileo spacecraft near the Galilean moon, Io. Io is a significant source of material, especially SO2, and various products of dissociation, and further these atoms and molecules are readily ionized. The initial velocity of the ions is essentially that of the neutral species, i.e., the Keplerian velocity. The plasma, on the other hand is co-rotating, and there is a differential flow of the order 57 km/s between the plasma and the neutral particles. Thus pick-up ion instabilities are Rely to occur within the Jovian magnetosphere. Indeed, magnetometer observations from the Galileo spacecraft clearly show ion cyclotron waves that have been identified with a large variety of plasma species, such as O+, S++ (which has the same gyro-frequency as O+), S+, and SO2+. Typically, however, the dominant frequency is near the SO2+ gyro-frequency. The research effort was originally planned to be a team effort between Robert J. Strangeway as the Principal Investigator, and Debbie Huddleston, who was an Assistant Research Geophysicist at UCLA. Unfortunately, Dr. Huddleston took a position within Industry. The effort was therefore descoped, and Dr. Strangeway instead pursued a collaboration with Dr. Xochitl Blanco-Cano, of the Instituto de Geofisica, Universidad Nacional Autonoma de Mexico. This has proved to be a productive collaboration, with several papers and publications arising out of the effort. The magnetic field oscillations near lo generally fall into two types: ion cyclotron waves, with frequencies near an ion gyro-frequency, and lower frequency mirror-mode waves. The ion cyclotron waves are mainly transverse, and frequently propagate along the ambient magnetic field. The mirror-mode waves are compressional waves, and they have essentially zero frequency in the plasma rest frame. One of the purposes of our investigation is to understand what controls the types of wave modes that occur, since both

High-lying neutron hole strengths observed in pick-up reactions

International Nuclear Information System (INIS)

Gales, S.

1980-01-01

Neutron-hole states in orbits well below the Fermi surface have been observed in a number of medium-heavy nuclei from A=90 to 209 using one nucleon pick-up reactions. The excitation energies, angular distributions of such broad and enhanced structures will be discussed. The fragmentation of the neutron-hole strengths as well as the spreading of such simple mode of excitations into more complex states are compared to recent calculations within the quasiparticle-phonon or the single particle-vibration coupling nuclear models. We report on recent measurements of J for inner-hole states in 89 Zr and 115 Sn 119 Sn using the analyzing power of the (p,d) and (d,t) reactions. Large enhancement of cross-sections are observed at high excitation energy in the study of the (p,t) reactions on Zr, Cd, Sn, Te and Sm isotopes. The systematic features of such high-lying excitation are related to the ones observed in one neutron pick-up experiments. The origin of such concentration of two neutron-hole strengths in Cd and Sn isotopes will be discussed. Preliminary results obtained in the study of the (α, 6 He) reaction at 218 MeV incident energy on 90 Zr, 118 Sn and 208 Pb targets are presented and compared to the (p,t) results. Finally the properties of hole-analog states populated in neutron pick-up reactions (from 90 Zr to 208 Pb) will be presented

Skin Picking Disorder

Directory of Open Access Journals (Sweden)

Pinar Cetinay Aydin

2014-08-01

Full Text Available Skin picking disorder is not a dermatological disorder and it is a table characterized with picking skin excessively and repetitively, leading to damage in skin tissue. Unlike normal picking behaviour, psychogenic skin picking is repetitive and it can lead to severe damage in the skin and even complications which constitute vital danger. While some patients define frequent but short lasting picking attacks, others define rarer attacks which last a few hours. Skin picking disorder, which is not included in the classification systems up to DSM-5 as a separate diagnosis category, is included as an independent diagnosis in Obsessive Compulsive Disorder and Associated Disorders category in DSM-5. In case reports, open label studies and double blind studies selective serotonin reuptake inhibitors are shown to be effective in the treatment of skin picking disorder. Mostly, cognitive-behaviourial techniques are used and have been proven to be useful in psychotherapy. Habit reversal is one of the behaviourial techniques which are frequently applied, give positive results in which well-being state can be maintained. [Psikiyatride Guncel Yaklasimlar - Current Approaches in Psychiatry 2014; 6(4.000: 401-428

Final version of the pick-up wheels in the Pelletron tandem accelerator at Lund

International Nuclear Information System (INIS)

Hakansson, K.; Hellborg, R.

1993-01-01

A new type of pick-up wheel has been designed and constructed for the charge transport system of the Lund 3UDH Pelletron tandem accelerator. The major improvements compared with older types are a slender design with only one ball bearing and more robust contact pins with a rubber ring between the pinhead and the wheel nave. (orig.)

An assessment of the waterside corrosion and hydrogen pick-up in the zircaloy-2 pressure tubes of PHWR

International Nuclear Information System (INIS)

Sah, D.N.

1992-01-01

In view of the deleterious effect of hydriding on the operating life of zircaloy-2 pressure tubes in PHWRs there is an urgent need for the assessment of the status of the pressure tubes with respect to corrosion and hydrogen pick-up in the operating PHWRs. A model has been developed for analysing the waterside corrosion and hydrogen pick-up in the zircaloy-2 pressure tubes under reactor operating conditions. This model predicts the axial profiles of oxide layer thickness and hydrogen pick-up in the pressure tubes as a function of the operating time of the reactor. The prediction of hydrogen pick-up by the model in the F-10 pressure tube of RAPS-I have been found to be in good agreement with the measured value of hydrogen content. This report gives a brief description of the model and its predictions on the present status of hydrogen pick-up in the pressure tubes of lead reactor RAPS-II. (author). 6 refs., 5 figs., 2 tabs

(p, α) reactions: knock-on(out) or pick-up

International Nuclear Information System (INIS)

Gadioli, E.

1983-01-01

Nothwithstanding the great lot of data collected starting from the beginning of fifties, it cannot be said that a good degree of knowledge about the (p, α) reaction mechanism has been reached. Experimental data are usually interpreted or on the basis of a pure pick-up or knock-on(out) mechanism, though many results suggest the importance of both mechanism

Order Picking Optimization in Carousels Storage System

Directory of Open Access Journals (Sweden)

Xiong-zhi Wang

2013-01-01

Full Text Available This paper addresses the order picking problem in a material handling system consisting of multiple carousels and one picker. Carousels are rotatable closed-loop storage systems for small items, where items are stored in bins along the loop. An order at carousels consists of n different items stored there. The objective is to find an optimal picking sequence to minimizing the total order picking time. After proving the problem to be strongly NP-hard and deriving two characteristics, we develop a dynamic programming algorithm (DPA for a special case (two-carousel storage system and an improved nearest items heuristics (INIH for the general problem. Experimental results verify that the solutions are quickly and steadily achieved and show their better performance.

MgB2 magnetometer with directly coupled pick-up loop

NARCIS (Netherlands)

Portesi, C.; Mijatovic, D.; Veldhuis, Dick; Brinkman, Alexander; Monticone, E.; Gonnelli, R.S.

2006-01-01

magnetometer with a directly coupled pick-up loop. We used an all in situ technique for fabricating magnesium diboride films, which consists of the co-evaporation of B and Mg by means of an e-gun and a resistive heater respectively. Consequently, we realized the superconducting device, which

Performance approximation of pick-to-belt orderpicking systems

NARCIS (Netherlands)

M.B.M. de Koster (René)

1994-01-01

textabstractIn this paper, an approximation method is discussed for the analysis of pick-to-belt orderpicking systems. The aim of the approximation method is to provide an instrument for obtaining rapid insight in the performance of designs of pick-to-belt orderpicking systems. It can be used to

77 FR 40385 - Withdrawal of Regulatory Guide 7.3; Procedures for Picking Up and Receiving Packages of...

Science.gov (United States)

2012-07-09

... Picking Up and Receiving Packages of Radioactive Material AGENCY: Nuclear Regulatory Commission. ACTION.... Nuclear Regulatory Commission (NRC or Commission) is withdrawing RG 7.3, ``Procedures for Picking Up and... Public Document Room (PDR) reference staff at 1-800-397-4209, or 301-415-4737, or by email at PDR...

Whole body organization during a symmetric bimanual pick up task in overweight and obese children.

Science.gov (United States)

Hung, Ya-Ching; Mangiafreno, Melissa; Gill, Simone V

2017-02-01

Information on the effects of obesity on the biomechanics of whole body movement control in children is limited. The purpose of the current study is to test the hypothesis that during a simple pick up task, overweight and obese children will organize their whole body movements differently than those in normal weight children. Twelve children who were overweight or obese (5-13 years old) and twelve age matched normal weight children participated in the study. Children picked up an empty box to waist height at a self-selected pace while kinematic and kinetic data were recorded and analyzed using a VICON system and two AMTI force plates. The overweight and obese group showed less knee flexion in both legs, more spine flexion, and less excursion in the height of their center of mass (all Psoverweight and obese group had more anterior movement in their center of mass (Poverweight and obese group had greater anterior excursion with faster average anterior moving speed and spent a longer time with the center of pressure reached forward (all Psoverweight and obese children organize their whole body movement during a simple pick up task differently with higher and more forward center of mass, quickly shifting their center of pressure anteriorly, and with a longer period of time with the center of pressure remaining forward. Their movement strategy may put them in a less stable condition and thus make them prone to losing balance. Copyright © 2016 Elsevier B.V. All rights reserved.

77 FR 36017 - Regulatory Guide 7.3, Procedures for Picking Up and Receiving Packages of Radioactive Material

Science.gov (United States)

2012-06-15

... NUCLEAR REGULATORY COMMISSION [NRC-2012-0139] Regulatory Guide 7.3, Procedures for Picking Up and... Guide (RG) 7.3, ``Procedures for Picking Up and Receiving Packages of Radioactive Material.'' The guide..., please contact the NRC's Public Document Room (PDR) reference staff at 1-800-397-4209, or 301-415-4737...

PICK1 expression in the Drosophila central nervous system primarily occurs in the neuroendocrine system

DEFF Research Database (Denmark)

Jansen, Anna M; Nässel, Dick R; Madsen, Kenneth L

2009-01-01

in the adult and larval Drosophila central nervous system. PICK1 was found in cell bodies in the subesophageal ganglion, the antennal lobe, the protocerebrum, and the neuroendocrine center pars intercerebralis. The cell types that express PICK1 were identified using GAL4 enhancer trap lines. The PICK1...... (AMPA) receptor subunit GluR2 and the dopamine transporter. PICK1 is strongly implicated in GluR2 trafficking and synaptic plasticity. In mammals, PICK1 has been characterized extensively in cell culture studies. To study PICK1 in an intact system, we characterized PICK1 expression immunohistochemically...... neurons in the neuroendocrine system, which express the transcription factor DIMM and the amidating enzyme peptidylglycine-alpha-hydroxylating monooxygenase (PHM). The PICK1-positive cells include neurosecretory cells that produce the insulin-like peptide dILP2. PICK1 expression in insulin-producing cells...

Ac-loss measurement of coated conductors: The influence of the pick-up coil position

International Nuclear Information System (INIS)

Schmidt, Curt

2008-01-01

The ac-loss measurement by the magnetization method requires calibration for obtaining absolute values. A convenient way of calibration is the calorimetric measurement which yields, within the measuring accuracy, absolute loss values. In the magnetization measurement the hysteresis loop of sample magnetization which determines the losses is measured via the integration of magnetic flux penetrating a pick-up coil. The ratio of flux integral to magnetization integral and hence the calibration factor is however, for a given pick-up coil geometry, not exactly a constant, but depends on the magnetization current pattern within the sample. Especially for thin tapes in perpendicular external field this effect has to be taken into consideration in order to avoid miss measurements. The relation between measured flux and sample magnetization was calculated for special cases of magnetization current distribution in the sample as a function of the pick-up coil position. Furthermore calibration factors were measured as a function of the ac-field amplitude and the result compared with available theoretical models. A good agreement was found between experiment and theory

A Proposed Analytical Model for Integrated Pick-and-Sort Systems

Directory of Open Access Journals (Sweden)

Recep KIZILASLAN

2013-11-01

Full Text Available In this study we present an analytical approach for integration of order picking and sortation operations which are the most important, labour intensive and costly activity for warehouses. Main aim is to investigate order picking and sorting efficiencies under different design issues as a function of order wave size. Integrated analytical model is proposed to estimate the optimum order picking and order sortation efficiency. The model, which has been tested by simulations with different illustrative examples, calculates the optimum wave size that solves the trade-off between picking and sorting operations and makes the order picking and sortations efficiency maximum. Our model also allow system designer to predict the order picking and sorting capacity for different system configurations. This study presents an innovative approach for integrated warehouse operations.

Seasonal variation of Martian pick-up ions: Evidence of breathing exosphere

Science.gov (United States)

Yamauchi, M.; Hara, T.; Lundin, R.; Dubinin, E.; Fedorov, A.; Sauvaud, J.-A.; Frahm, R. A.; Ramstad, R.; Futaana, Y.; Holmstrom, M.; Barabash, S.

2015-12-01

The Mars Express (MEX) Ion Mass Analyser (IMA) found that the detection rate of the ring-like distribution of protons in the solar wind outside of the bow shock to be quite different between Mars orbital summer (around perihelion) and orbital winter (around aphelion) for four Martian years, while the north-south asymmetry is much smaller than the perihelion-aphelion difference. Further analyses using eight years of MEX/IMA solar wind data between 2005 and 2012 has revealed that the detection frequency of the pick-up ions originating from newly ionized exospheric hydrogen with certain flux strongly correlates with the Sun-Mars distance, which changes approximately every two years. Variation due to the solar cycle phase is not distinguishable partly because this effect is masked by the seasonal variation under the MEX capability of plasma measurements. This finding indicates that the variation in solar UV has a major effect on the formation of the pick-up ions, but this is not the only controlling factor.

Testbeam Studies on Pick-Up in Sensors with Embedded Pitch Adapters

CERN Document Server

Rehnisch, Laura; The ATLAS collaboration

2018-01-01

Embedded pitch adapters are an alternative solution to external pitch adapters widely used to facilitate the wire-bonding step when connecting silicon strip sensors and readout electronics of different pitch. The pad-pitch adaption can be moved into the sensor fabrication step by implementing a second layer of metal tracks, connected by vias to the primary metal layer of sensor strips. Such a solution, however, might bear the risk of performance losses introduced by various phenomena. One of these effects, the undesired capacitive coupling between the silicon bulk and this second metal layer (pick-up) has been investigated in photon testbeam measurements. For a worst-case embedded pitch adapter design, expected to be maximally susceptible to pick-up, a qualitative analysis has visualized the effect as a function of the location on the second metal layer structure. It was further found that the unwanted effect decreases towards expected values for operating thresholds of the binary readout used. Suggestions fo...

Sodium Pick-Up Ion Observations in the Solar Wind Upstream of Mercury

Science.gov (United States)

Jasinski, J. M.; Raines, J. M.; Slavin, J. A.; Regoli, L. R.; Murphy, N.

2018-05-01

We present the first observations of sodium pick-up ions upstream of Mercury’s magnetosphere. From these observations we infer properties of Mercury’s sodium exosphere and implications for the solar wind interaction with Mercury’s magnetosphere.

“Pick-up Lines”: A Fun Way to Facilitate Learning Microbiological Concepts

Directory of Open Access Journals (Sweden)

Thomas Edison E. dela Cruz

2014-05-01

Full Text Available Learning microbiology can be made fun by writing funny lines related to microbiology. Students were tasked to create their own pick-up lines and explain these based on their understanding of the basic concepts in microbiology.

Cometary pick-up ions observed near Giacobini-Zinner

Science.gov (United States)

Gloeckler, G.; Hovestadt, D.; Ipavich, F. M.; Scholer, M.; Klecker, B.

1986-01-01

The number and energy density of cometary water-group ions observed near Comet Giacobini-Zinner are derived using the rest-frame distribution functions. The data reveal that density profiles of inbound and outbound passes and their shape correlate with pick-up ion production model predictions. The lose rate and production rate of water-group cometary molecules calculated from predicted and measured density profiles are 2 x 10 to the -6th/sec and 2.6 x 10 to the 28th/sec respectively. The shapes of the distribution functions are examined to study the solar wind/cometary ions interaction process.

Laparoscopic ovum pick-up in spotted paca ( Cuniculus pacas )

OpenAIRE

Barros,F.F.P.C.; Teixeira,P.P.M.; Uscategui,R.A.R.; Coutinho,L.N.; Brito,M.B.S.; Kawanami,A.E.; Almeida,V.T.; Mariano,R.S.G.; Nociti,R.P.; Machado,M.R.F.; Vicente,W.R.R.

2016-01-01

ABSTRACT The aim of this work is study the laparoscopic ovum pick-up (LapOPU) technique in spotted paca, describing surgery details, complications and oocyte recovery rate. Nine healthy adult non-pregnant captive females were used, in a total of 39 procedures. When the surgical plane of anaesthesia was achieved, the females were positioned at 20º Trendelenburg. Three 6mm trocars were placed on right and left inguinal and hypogastric regions. Abdomen was inflated with CO2 and the intra-abdomin...

The pick-up mechanism in composite particle emission processes

International Nuclear Information System (INIS)

Zhang Jingshang; Yan Shiwei; Wang Cuilan

1992-01-01

The pick-up mechanism has been included in the exciton model for the light composite particle emissions. Based on the cluster phase space integration method the formation probabilities of α,d,t, 3 He are obtained. The calculation results of (n,t) cross sections indicate that this theoretical method can reproduce the experimental data nicely. For triton emissions in pre-equilibrium reaction processes, the semi-direct reactions are the dominant terms which are just omitted in the previous model calculation

41 CFR 102-41.230 - May SASPs pick up or store donated drug paraphernalia in their distribution centers?

Science.gov (United States)

2010-07-01

... 41 Public Contracts and Property Management 3 2010-07-01 2010-07-01 false May SASPs pick up or store donated drug paraphernalia in their distribution centers? 102-41.230 Section 102-41.230 Public Contracts and Property Management Federal Property Management Regulations System (Continued) FEDERAL...

Analysis of action of device with spring pins for picking up of retted flax straw

Directory of Open Access Journals (Sweden)

V. G. Chernikov

2016-01-01

Full Text Available Weather conditions in flax cultivation areas during harvesting time can be characterized with high rainfalls, relative humidity and, in some areas, extremely low temperature. Clogging of fields with stones, grass germination through flax swaths, often an absence of homogeneity on length and thickness of straw in swaths require working out new devices for straw lifting. Existing devices for picking up do not provide a high-quality lifting of flax swaths and have a low coefficient of reliability of the process. Researches and experimental-design works were carried out to create a constructive-technological scheme of the picking up device of cylindrical type with spring-loaded rigid pins. The mathematical model of the device operation when a pin touching an obstacle. The condition of balance of the mechanism under which the pin of a cilinder will operate technological process of picking up of retted flax straw without action of the safety device (spring was described. The offered method of calculation of operation of this device was introduced in a common flax swath lifter-turners

The Relationship Between Treatment Adherence and Non-picked Up Medications in Community Pharmacies

Directory of Open Access Journals (Sweden)

Vu Phan Hoang Nguyen

2016-10-01

Full Text Available Medication adherence is one of the major factors that determine an outcome of a treatment. Despite the effort of healthcare providers to improve the adherence rate, it still remains a serious issue in our health care system today. Many patients do not take their medications as directed or just simply do not want to fill or refill their prescriptions. A small survey performed by pharmacy students at Temple School of Pharmacy showed that there is a significant number of patients did not pick up their medications. Cardiovascular medications are the most common non-picked up drugs. There are various reasons that patients use to justify for this non-adherence behavior. However, they are unaware that their actions create a tremendous negative effect not only on the treatment itself but also on the entire health care system. The consequences include expensive therapies, inaccurate research data, and poor treatment outcomes. Many solutions have been utilized to solve this problem, but it is still the major problem for healthcare providers to keep in mind when planning a drug regimen. Although many people believed that pharmacists are responsible for solving this problem, it should be a multidisciplinary effort of all healthcare providers to improve the medication adherence. Conflict of Interest We declare no conflicts of interest or financial interests that the authors or members of their immediate families have in any product or service discussed in the manuscript, including grants (pending or received, employment, gifts, stock holdings or options, honoraria, consultancies, expert testimony, patents and royalties.   Type: Student Project

Normative values and the effects of age, gender, and handedness on the Moberg Pick-Up Test.

Science.gov (United States)

Amirjani, Nasim; Ashworth, Nigel L; Gordon, Tessa; Edwards, David C; Chan, K Ming

2007-06-01

The Moberg Pick-Up Test is a standardized test for assessing hand dexterity. Although reduction of sensation in the hand occurs with aging, the effect of age on a subject's performance of the Moberg Pick-Up Test has not been examined. The primary goal of this study was to examine the impact of aging and, secondarily, the impact of gender and handedness, on performance of the Moberg Pick-Up Test in 116 healthy subjects. The average time to complete each of the four subsets of the test was analyzed using the Kruskal-Wallis, Mann-Whitney U, and Wilcoxon signed-rank tests. The results show that hand dexterity of the subjects was significantly affected by age, with young subjects being the fastest and elderly subjects the slowest. Women accomplished the test faster than men, and task performance with the dominant hand was faster than with the non-dominant hand. Use of normative values established based on age and gender is a valuable objective tool to gauge hand function in patients with different neurologic disorders.

Perancangan dan Proses Pembuatan Inner Door Panel Mobil Pick Up Multiguna

Directory of Open Access Journals (Sweden)

Bambang Prayogi

2014-09-01

Full Text Available Sejak tahun 2012 Jurusan Teknik Mesin bekerja sama dengan PT. INKA mengembangkan mobil murah multigna. Mobil pick up tersebut diberi nama GEA. Pengembangan dilakukan pada body, chasis dan engine. Sebagai bagian dari body, pintu mobil juga akan dikembangkan. Pada tahun 2013, penelitian terhadap posisi handle pengatur kaca jendela atau window regulator mobil pick up GEA telah dilakukan. Evaluasi tersebut mengharuskan adanya perubahan desain dari inner door panel. Suatu rancangan pengembangan desain inner door panel perlu dilakukan agar inner door panel dapat diproduksi secara massal. Langkah-langkah penelitian yang dilakukan meliputi penyusunan list of requirement untuk pengembangan konsep, analisa getaran dan tegangan yang terjadi pada panel dengan bantuan software CATIA. Selanjutnya perancangan proses pembuatan dan perancangan punch and dies-nya dilakukan. Dari analisa getaran yang dilakukan, dapat diketahui inner door panel memiliki frekuensi natural sebesar 166,94 Hz (10.016,4 rpm artinya panel aman dan tidak terpengaruh oleh getaran dari mesin mobil. Tegangan yang terjadi pada inner door panel akibat gaya pembebanan pada handle pintu bagian dalam adalah 2,9159 x 107 Pa (2,97 Kg/mm2 sehingga lebih kecil dari tegangan ijin materialnya 13,94 Kg/mm2 dan rancangan masih berada dalam kategori aman. Untuk membuat inner door panel dilakukan 3 macam proses pembentukan yaitu trimming, embossing dan piercing. Total gaya pembentukan masing-masing proses sebagai berikut: Gaya pembentukan proses trimming = 48.96 ton, proses embossing = 26.89 ton dan proses piercing = 41.66 ton. Window regulator yang disarankan untuk digunakan pada mobil pick up multiguna ini adalah scissor type window regulator dengan tenaga penggerak manual. Pada perancangan punch and dies, tegangan kompresi masing-masing proses dihitung dan hasilnya adalah sebagai berikut: Tegangan kompresi proses trimming 0.11 Kg/mm2, tegangan kompresi proses embossing 0.28 Kg/mm2, tegangan kompresi

Single neutron pick-up on 104Pd

International Nuclear Information System (INIS)

Rodrigues, M.R.D.; Andre, J.P.A.M. de; Borello-Lewin, T.; Horodynski-Matsushigue, L.B.; Duarte, J.L.M.; Rodrigues, C.L.; Ukita, G.M.

2006-01-01

Low-lying levels of 103 Pd have been investigated through the (d,t) reaction on 104 Pd, at an incident deuteron energy of 15.0 MeV. Outgoing particles were momentum analyzed by an Enge magnetic spectrograph and detected in nuclear emulsion plates, with an energy resolution of 8 keV. Previous (d,t) work suffered from a much worse resolution than that here achieved. A partial analysis of the data obtained is reported, referring to six out of the fourteen scattering angles for which data were obtained. Angular distributions associated with eight of the thirteen levels seen up to 1.1 MeV of excitation have been compared to DWBA one-neutron pick-up predictions. Both, the attributed excitation energy values and the transferred angular momenta are in excellent agreement with the results of other kind of experiments, as tabulated by the Nuclear Data Sheets. Some peculiar structure characteristics, associated with the yrast 5/2 + , 3/2 + and 7/2 + states found in the Ru chain could be recognized also in 103 Pd, pointing to the possibility of a more global understanding of this transitional mass region. (author)

Aligning Order Picking Methods, Incentive Systems, and Regulatory Focus to Increase Performance

NARCIS (Netherlands)

de Vries, J.; de Koster, R.; Stam, D.

2016-01-01

A controlled field experiment investigates order picking performance in terms of productivity. We examined three manual picker-to-parts order picking methods (parallel, zone, and dynamic zone picking) under two different incentive systems (competition-based vs. cooperation-based) for pickers with

Aligning order picking methods, incentive systems, and regulatory focus to increase performance

NARCIS (Netherlands)

J. de Vries (Jelle); M.B.M. de Koster (René); D.A. Stam (Daan)

2015-01-01

textabstractA unique controlled field experiment investigates order picking performance (in terms of productivity and quality). We examined three manual picker-to-parts order picking methods (parallel, zone, and dynamic zone picking) under two different incentive systems (competition- based versus

An ultra low noise AC beam transformer for deceleration and diagnostics of low intensity beams

CERN Document Server

González, C

1999-01-01

The design of a broad band ultra-low noise ferrite loaded AC beam transformer is presented. It is designed for use in the CERN Antiproton Decelerator (AD), where beams of a few 107 charges must be decelerated from 3.5 GeV/c to 100 MeV/c. It is used in the RF beam-phase loop, and for intensity and bunch shape measurements during deceleration. When the beam is debunched for cooling on magnetic flat tops, the pick-up is used for measurements of intensity and momentum distribution by means of longitudinal Schottky scans. When used as Schottky pick-up, the signal to noise ratio should be better by about 40 dB than the existing stripline based longitudinal Schottky pick-up. The integrated design of pick-up and associated low-noise amplifier is presented. The achieved noise performance of a few from 1 to 3 MHz is obtained by attaching a low-noise, high-impedance silicon JFET (junction field effect transistor) amplifier to a high-Q resonant ferrite loaded cavity, and then eliminating the resonant response by low-nois...

SCHOTTKY MEASUREMENTS DURING RHIC 2000

International Nuclear Information System (INIS)

CAMERON, P.; CUPOLO, J.; DEGEN, C.; HAMMONS, L.; KESSELMAN, M.; LEE, R.; MEYER, A.; SIKORA, R.

2001-01-01

The 2GHz Schottky system was a powerful diagnostic during RHIC 2000 commissioning. A continuous monitor without beam excitation, it provided betatron tune, chromaticity, momentum spread relative emittance, and synchrotron tune. It was particularly useful during transition studies. In addition, a BPM was resonated at 230MHz for Schottky measurements

Robotic vision system for random bin picking with dual-arm robots

Directory of Open Access Journals (Sweden)

Kang Sangseung

2016-01-01

Full Text Available Random bin picking is one of the most challenging industrial robotics applications available. It constitutes a complicated interaction between the vision system, robot, and control system. For a packaging operation requiring a pick-and-place task, the robot system utilized should be able to perform certain functions for recognizing the applicable target object from randomized objects in a bin. In this paper, we introduce a robotic vision system for bin picking using industrial dual-arm robots. The proposed system recognizes the best object from randomized target candidates based on stereo vision, and estimates the position and orientation of the object. It then sends the result to the robot control system. The system was developed for use in the packaging process of cell phone accessories using dual-arm robots.

Design developments for the ITER in-Vessel equilibrium pick-up Coils and Halo current Sensors

International Nuclear Information System (INIS)

Chitarin, G; Grando, L.; Pomaro, N.; Peruzzo, S.; Taccon, C.

2006-01-01

The ITER magnetic diagnostics must provide essential information to be used both for plasma diagnostic purposes, and as feedback signals for the machine control loops. Some of the sensors have to be installed in a hostile environment characterized by severe neutron irradiation and plasma heat loads, which can reduce the sensor lifetime (due to mechanical and electrical damage) and also generate undesired DC signals, which might compromise the accuracy of the measurements obtained by time-integration. The paper is focused on the design development and optimization of a typical in-vessel tangential pick-up Coil. The work is aimed to achieve the required measurement precision in spite of Radiation Induced Electromotive Force (RIEMF) and Radiation Induced Thermo-Electric Sensitivity (RITES), which have recently been documented to take place in Mineral Insulated Cables (MIC). To this purpose, a substantial reduction of the thermal gradient and the maximum temperature due to nuclear heating in the pick-up coils is considered necessary. Within the limits of several heavy engineering constraints, a new concept of magnetic pick up coil has been developed. A winding made of a ceramic-coated conductor (instead of a MIC) and '' impregnated '' with ceramic filler is proposed. Different material choices for the coil support structure have been investigated. Similar issues are related to the Halo Sensor design. The possibility of replacing the circular tubes used as support of the Rogowski coils with a ceramic support in order to avoid the non-linear effect of the magnetic material has also been studied. The replacement of the MIC of the winding with a ceramic-coated wire is also investigated in order to increase of the effective area of the sensor. The paper includes also a critical review of each stage of the measurement chain (probes, cabling, conditioning electronics and data acquisition) in order to assess the compliance with the overall system precision that is required for

What Skills and Tactics Are Needed to Play Adult Pick-Up Basketball Games?

Science.gov (United States)

Wang, Jianyu; Liu, Wenhao; Moffit, Jeffrey

2010-01-01

The purpose of this study was to examine skill levels and performance patterns of regular players of pick-up basketball games. By a survey, 65 participants were identified as regular players and participated in the study. An observational instrument used to analyze game performance of the participants was developed and both content and construct…

Real time management of the AD Schottky/BTF beam measurement system

CERN Document Server

Ludwig, M

2003-01-01

The AD Schottky and BTF system relies on rapid acquisition and analysis of beam quantisation noise during the AD cycle which is based on an embedded receiver and digital signal processing board hosted in a VME system. The software running in the VME sets up the embedded system and amplifiers, interfaces to the RF and control system, manages the execution speed and sequence constraints with respect to the various operating modes, schedules measurements during the AD cycle and performs post processing taking into account the beam conditions in an autonomous way. The operating modes of the instrument dynamically depend on a detailed configuration, the beam parameters during the AD cycle and optional user interaction. Various subsets of the processed data are available on line and in quasi real time for beam intensity, momentum spread and several spectrum types, which form an important part of AD operation today.

Single neutron pick-up on {sup 104}Pd

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, M.R.D.; Andre, J.P.A.M. de; Borello-Lewin, T.; Horodynski-Matsushigue, L.B.; Duarte, J.L.M.; Rodrigues, C.L. [Universidade de Sao Paulo, SP (Brazil). Inst. de Fisica; Ukita, G.M. [Universidade de Santo Amaro, SP (Brazil). Faculdade de Psicologia

2006-12-15

Low-lying levels of {sup 103}Pd have been investigated through the (d,t) reaction on {sup 104}Pd, at an incident deuteron energy of 15.0 MeV. Outgoing particles were momentum analyzed by an Enge magnetic spectrograph and detected in nuclear emulsion plates, with an energy resolution of 8 keV. Previous (d,t) work suffered from a much worse resolution than that here achieved. A partial analysis of the data obtained is reported, referring to six out of the fourteen scattering angles for which data were obtained. Angular distributions associated with eight of the thirteen levels seen up to 1.1 MeV of excitation have been compared to DWBA one-neutron pick-up predictions. Both, the attributed excitation energy values and the transferred angular momenta are in excellent agreement with the results of other kind of experiments, as tabulated by the Nuclear Data Sheets. Some peculiar structure characteristics, associated with the yrast 5/2{sup +}, 3/2{sup +} and 7/2{sup +} states found in the Ru chain could be recognized also in {sup 103}Pd, pointing to the possibility of a more global understanding of this transitional mass region. (author)

Schottky Noise and Beam Transfer Functions

Energy Technology Data Exchange (ETDEWEB)

Blaskiewicz M.; Blaskiewicz M.

2016-12-01

Beam transfer functions (BTF)s encapsulate the stability properties of charged particle beams. In general one excites the beam with a sinusoidal signal and measures the amplitude and phase of the beam response. Most systems are very nearly linear and one can use various Fourier techniques to reduce the number of measurements and/or simulations needed to fully characterize the response. Schottky noise is associated with the finite number of particles in the beam. This signal is always present. Since the Schottky current drives wakefields, the measured Schottky signal is influenced by parasitic impedances.

Exact Solutions to the Symmetric and Asymmetric Vehicle Routing Problem with Simultaneous Delivery and Pick-Up

Directory of Open Access Journals (Sweden)

Julia Rieck

2013-05-01

Full Text Available In reverse logistics networks, products (e.g., bottles or containers have to be transported from a depot to customer locations and, after use, from customer locations back to the depot. In order to operate economically beneficial, companies prefer a simultaneous delivery and pick-up service. The resulting Vehicle Routing Problem with Simultaneous Delivery and Pick-up (VRPSDP is an operational problem, which has to be solved daily by many companies. We present two mixed-integer linear model formulations for the VRPSDP, namely a vehicle-flow and a commodity-flow model. In order to strengthen the models, domain-reducing preprocessing techniques, and effective cutting planes are outlined. Symmetric benchmark instances known from the literature as well as new asymmetric instances derived from real-world problems are solved to optimality using CPLEX 12.1.

Embodied intersubjective engagement in mother-infant tactile communication: a cross-cultural study of Japanese and Scottish mother-infant behaviors during infant pick-up.

Science.gov (United States)

Negayama, Koichi; Delafield-Butt, Jonathan T; Momose, Keiko; Ishijima, Konomi; Kawahara, Noriko; Lux, Erin J; Murphy, Andrew; Kaliarntas, Konstantinos

2015-01-01

This study examines the early development of cultural differences in a simple, embodied, and intersubjective engagement between mothers putting down, picking up, and carrying their infants between Japan and Scotland. Eleven Japanese and ten Scottish mothers with their 6- and then 9-month-old infants participated. Video and motion analyses were employed to measure motor patterns of the mothers' approach to their infants, as well as their infants' collaborative responses during put-down, pick-up, and carry phases. Japanese and Scottish mothers approached their infants with different styles and their infants responded differently to the short duration of separation during the trial. A greeting-like behavior of the arms and hands was prevalent in the Scottish mothers' approach, but not in the Japanese mothers' approach. Japanese mothers typically kneeled before making the final reach to pick-up their children, giving a closer, apparently gentler final approach of the torso than Scottish mothers, who bent at the waist with larger movements of the torso. Measures of the gap closure between the mothers' hands to their infants' heads revealed variably longer duration and distance gap closures with greater velocity by the Scottish mothers than by the Japanese mothers. Further, the sequence of Japanese mothers' body actions on approach, contact, pick-up, and hold was more coordinated at 6 months than at 9 months. Scottish mothers were generally more variable on approach. Measures of infant participation and expressivity indicate more active participation in the negotiation during the separation and pick-up phases by Scottish infants. Thus, this paper demonstrates a culturally different onset of development of joint attention in pick-up. These differences reflect cultures of everyday interaction.

Embodied intersubjective engagement in mother–infant tactile communication: a cross-cultural study of Japanese and Scottish mother–infant behaviors during infant pick-up

Science.gov (United States)

Negayama, Koichi; Delafield-Butt, Jonathan T.; Momose, Keiko; Ishijima, Konomi; Kawahara, Noriko; Lux, Erin J.; Murphy, Andrew; Kaliarntas, Konstantinos

2015-01-01

This study examines the early development of cultural differences in a simple, embodied, and intersubjective engagement between mothers putting down, picking up, and carrying their infants between Japan and Scotland. Eleven Japanese and ten Scottish mothers with their 6- and then 9-month-old infants participated. Video and motion analyses were employed to measure motor patterns of the mothers’ approach to their infants, as well as their infants’ collaborative responses during put-down, pick-up, and carry phases. Japanese and Scottish mothers approached their infants with different styles and their infants responded differently to the short duration of separation during the trial. A greeting-like behavior of the arms and hands was prevalent in the Scottish mothers’ approach, but not in the Japanese mothers’ approach. Japanese mothers typically kneeled before making the final reach to pick-up their children, giving a closer, apparently gentler final approach of the torso than Scottish mothers, who bent at the waist with larger movements of the torso. Measures of the gap closure between the mothers’ hands to their infants’ heads revealed variably longer duration and distance gap closures with greater velocity by the Scottish mothers than by the Japanese mothers. Further, the sequence of Japanese mothers’ body actions on approach, contact, pick-up, and hold was more coordinated at 6 months than at 9 months. Scottish mothers were generally more variable on approach. Measures of infant participation and expressivity indicate more active participation in the negotiation during the separation and pick-up phases by Scottish infants. Thus, this paper demonstrates a culturally different onset of development of joint attention in pick-up. These differences reflect cultures of everyday interaction. PMID:25774139

Automatic detection of lift-off and touch-down of a pick-up walker using 3D kinematics.

Science.gov (United States)

Grootveld, L; Thies, S B; Ogden, D; Howard, D; Kenney, L P J

2014-02-01

Walking aids have been associated with falls and it is believed that incorrect use limits their usefulness. Measures are therefore needed that characterize their stable use and the classification of key events in walking aid movement is the first step in their development. This study presents an automated algorithm for detection of lift-off (LO) and touch-down (TD) events of a pick-up walker. For algorithm design and initial testing, a single user performed trials for which the four individual walker feet lifted off the ground and touched down again in various sequences, and for different amounts of frame loading (Dataset_1). For further validation, ten healthy young subjects walked with the pick-up walker on flat ground (Dataset_2a) and on a narrow beam (Dataset_2b), to challenge balance. One 88-year-old walking frame user was also assessed. Kinematic data were collected with a 3D optoelectronic camera system. The algorithm detected over 93% of events (Dataset_1), and 95% and 92% in Dataset_2a and b, respectively. Of the various LO/TD sequences, those associated with natural progression resulted in up to 100% correctly identified events. For the 88-year-old walking frame user, 96% of LO events and 93% of TD events were detected, demonstrating the potential of the approach. Copyright © 2013 IPEM. Published by Elsevier Ltd. All rights reserved.

Heliospheric pick-up ions influencing thermodynamics and dynamics of the distant solar wind

Directory of Open Access Journals (Sweden)

H. J. Fahr

2002-01-01

Full Text Available Neutral interstellar H-atoms penetrate into the inner heliosphere and upon the event of ionization are converted into pick-up ions (PUIs. The magnetized solar wind flow incorporates these ions into the plasma bulk and enforces their co-motion. By nonlinear interactions with wind-entrained Alfvén waves, these ions are then processed in the comoving velocity space. The complete pick-up process is connected with forces acting back to the original solar wind ion flow, thereby decelerating and heating the solar wind plasma. As we show here, the resulting deceleration cannot be treated as a pure loading effect, but requires adequate consideration of the action of the pressure of PUI-scattered waves operating by the PUI pressure gradient. Hereby, it is important to take into proper account the stochastic acceleration which PUIs suffer from at their convection out of the inner heliosphere by quasi-linear interactions with MHD turbulences. Only then can the presently reported VOYAGER observations of solar wind decelerations and heatings in the outer heliosphere be understood in view of the most likely values of interstellar gas parameters, such as an H-atom density of 0.12 cm-3 . Solar wind protons (SWPs appear to be globally heated in their motion to larger solar distances. Ascribing the needed heat transfer to the action of suprathermal PUIs, which drive MHD waves that are partly absorbed by SWPs, in order to establish the observed SWP polytropy, we can obtain a quantitative expression for the solar wind proton pressure as a function of solar distance. This expression clearly shows the change from an adiabatic to a quasi-polytropic SWP behaviour with a decreasing polytropic index at increasing distances. This also allows one to calculate the average percentage of initial pick-up energy fed into the thermal proton energy. In a first order evaluation of this expression, we can estimate that about 10% of the initial PUI injection energy is eventually

Pick-up, transport and release of a molecular cargo using a small-molecule robotic arm

Science.gov (United States)

Kassem, Salma; Lee, Alan T. L.; Leigh, David A.; Markevicius, Augustinas; Solà, Jordi

2016-02-01

Modern-day factory assembly lines often feature robots that pick up, reposition and connect components in a programmed manner. The idea of manipulating molecular fragments in a similar way has to date only been explored using biological building blocks (specifically DNA). Here, we report on a wholly artificial small-molecule robotic arm capable of selectively transporting a molecular cargo in either direction between two spatially distinct, chemically similar, sites on a molecular platform. The arm picks up/releases a 3-mercaptopropanehydrazide cargo by formation/breakage of a disulfide bond, while dynamic hydrazone chemistry controls the cargo binding to the platform. Transport is controlled by selectively inducing conformational and configurational changes within an embedded hydrazone rotary switch that steers the robotic arm. In a three-stage operation, 79-85% of 3-mercaptopropanehydrazide molecules are transported in either (chosen) direction between the two platform sites, without the cargo at any time fully dissociating from the machine nor exchanging with other molecules in the bulk.

Carbon nanotube Schottky diode: an atomic perspective

International Nuclear Information System (INIS)

Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

2008-01-01

The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

On the Stability of Pick-up Ion Ring Distributions in the Outer Heliosheath

Science.gov (United States)

Summerlin, Errol J.; Viñas, Adolfo F.; Moore, Thomas E.; Christian, Eric R.; Cooper, John F.

2014-10-01

The "secondary energetic neutral atom (ENA)" hypothesis for the ribbon feature observed by the Interstellar Boundary Explorer (IBEX) posits that the neutral component of the solar wind continues beyond the heliopause and charge exchanges with interstellar ions in the Outer Heliosheath (OHS). This creates pick-up ions that gyrate about the draped interstellar magnetic field (ISMF) lines at pitch angles near 90° on the locus where the ISMF lies tangential to the heliopause and perpendicular to the heliocentric radial direction. This location closely coincides with the location of the ribbon feature according to the prevailing inferences of the ISMF orientation and draping. The locally gyrating ions undergo additional charge exchange and escape as free-flying neutral atoms, many of which travel back toward the inner solar system and are imaged by IBEX as a ribbon tracing out the locus described above. For this mechanism to succeed, the pick-up ions must diffuse in pitch angle slowly enough to permit secondary charge exchange before their pitch angle distribution substantially broadens away from 90°. Previous work using linear Vlasov dispersion analysis of parallel propagating waves has suggested that the ring distribution in the OHS is highly unstable, which, if true, would make the secondary ENA hypothesis incapable of rendering the observed ribbon. In this paper, we extend this earlier work to more realistic ring distribution functions. We find that, at the low densities necessary to produce the observed IBEX ribbon via the secondary ENA hypothesis, growth rates are highly sensitive to the temperature of the beam and that even very modest temperatures of the ring beam corresponding to beam widths of distributions necessary to produce the observed IBEX ENA flux via the secondary ENA hypothesis will be unstable to their own self-generated turbulence.

Modification of AFM Tips for Facilitating Picking-up of Nanoparticles

International Nuclear Information System (INIS)

Peng, Wang; Hai-Jun, Yang; Hua-Bin, Wang; Hai, Li; Xin-Yan, Wang; Ying, Wang; Jun-Hong, Lü; Bin, Li; Yi, Zhang; Jun, Hu

2008-01-01

The radius of atomic force microscope (AFM) tip is a key factor that influences nonspecific interactions between AFM tip and nanoparticles. Generally, a tip with larger radius contributes to a higher efficiency of picking up nanoparticles. We provide two methods for modifying the AFM tip: one is to wear a tip apex on a solid substrate and the other is to coat a tip with poly (dimethylsiloxane) (PDMS). Both the approaches can enhance the adhesion force between the tip and nanoparticles by increasing tip radius. The experimental results show that a modified tip, compared to an unmodified one, achieves six-fold efficiency improvement in the capture of targeted colloidal gold nanoparticles. (general)

Exploring the role of picker personality in predicting picking performance with pick by voice, pick to light and RF-terminal picking

NARCIS (Netherlands)

de Vries, J.; de Koster, R.; Stam, D.

2016-01-01

Order pickers and individual differences between them could have a substantial impact on picking performance, but are largely ignored in studies on order picking. This paper explores the role of individual differences in picking performance with various picking tools (pick by voice, RF-terminal

Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts

KAUST Repository

Hu, Youfan

2010-05-31

A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimum gain and phase for stochastic cooling systems

International Nuclear Information System (INIS)

Meer, S. van der.

1984-01-01

A detailed analysis of optimum gain and phase adjustment in stochastic cooling systems reveals that the result is strongly influenced by the beam feedback effect and that for optimum performance the system phase should change appreciably across each Schottky band. It is shown that the performance is not greatly diminished if a constant phase is adopted instead. On the other hand, the effect of mixing between pick-up and kicker (which produces a phase change similar to the optimum one) is shown to be less perturbing than is usually assumed, provided that the absolute value of the gain is not too far from the optimum value. (orig.)

Investor Outlook: Gene Therapy Picking up Steam; At a Crossroads.

Science.gov (United States)

Schimmer, Joshua; Breazzano, Steven

2016-09-01

The gene therapy field continues to pick up steam with recent successes in a number of different therapeutic indications that highlight the potential for the platform. As the field continues to make progress, a growing data set of long-term safety and efficacy data will continue to define gene therapy's role, determining ultimately how widely it may be used beyond rare, serious diseases with high unmet needs. New technologies often take unanticipated twists and turns as patient exposure accumulates, and gene therapy may be no exception. That said, with many diseases that have no other treatment options beyond gene therapy and that present considerable morbidity and mortality, the field appears poised to withstand some minor and even major bumps in the road should they emerge.

Use of ergonomic principles in manual order picking systems

Directory of Open Access Journals (Sweden)

Labus Nina

2018-02-01

Full Text Available Successful companies are continually striving to streamline costs and optimize processes, enabling them to grow progress, develop and ensure competitiveness on the market. A large part of the costs arises in warehouses, where up to 55% of total costs are generated by order-picking, which makes it important and interesting in terms of research. The paper explores “picker to part” order-picking concept, which enables flexible work and is the optimal choice for most companies. The concept is associated with a high level of work-related injuries and work-related illnesses. Work requires physical efforts resulting from handling heavy goods, performing repetitive movements and using manipulative means. Human as the main actor of the concept affects the costs caused by picking and the quality of work done, which depends on technological support, physically and psychologically capable and motivated people. Due to the high costs of service, the focus on time planning and productivity increases. Contrary, the lack of attention is paid to the working conditions and the health status of the pickers. To overcome this gab, a review of scientific and professional literature on ergonomic principles in picking concept »picker to part« was carried out, followed by a quantitative survey of ergonomic properties in warehousing activities. Results revealed that more than 60% of the surveyed order-pickers associate problems with health with the characteristics of work, about 24% of them associate health problems with the use of a particular means of transport, and all agree that provided measures to reduce physical effort and greater support of technologies influence on increased speed of work and better health status of order-pickers.

Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

KAUST Repository

Wei, Te-Yu; Yeh, Ping-Hung; Lu, Shih-Yuan; Wang, Zhong Lin

2009-01-01

A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

KAUST Repository

Wei, Te-Yu

2009-12-09

A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

Science.gov (United States)

Tomer, D.; Rajput, S.; Li, L.

2017-04-01

Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

International Nuclear Information System (INIS)

Tomer, D; Rajput, S; Li, L

2017-01-01

Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS 2 to fabricate Schottky junctions. These junctions exhibit rectifying current–voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions. (paper)

Schottky barrier CdTe(Cl) detectors for planetary missions

International Nuclear Information System (INIS)

Eisen, Yosef; Floyd, Samuel

2002-01-01

Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm x 2mm x 1mm and segmented monolithic 3cm x 3 cm x 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm x 2mm x 1mm CdTe operating at -30 degree sign C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm x 3cm x 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed

The gift in interaction: a study of 'picking-up the bill'.

Science.gov (United States)

Llewellyn, Nick

2011-12-01

This paper analyses the phenomenon of 'picking up the bill', thereby contributing to a resurgence of sociological interest in gift exchange. Drawing on ethnomethodology, it describes and locates a distinctive theoretical approach. Utilizing video recordings, the analysis considers the interactional constitution of gifts and how gift exchange is locally invoked via the norm of reciprocity. Recurrent practices are described, through which gifts are brought into being, with reciprocity invoked, by benefactor and beneficiary alike, to manage social problems of acceptance, rather than to sanction insufficient contributions. The study describes the social character of what are perhaps the preeminent gifts exchanged in modern societies; where one person pays for another's consumption. © London School of Economics and Political Science 2011.

On the stability of pick-up ion ring distributions in the outer heliosheath

International Nuclear Information System (INIS)

Summerlin, Errol J.; Viñas, Adolfo F.; Moore, Thomas E.; Christian, Eric R.; Cooper, John F.

2014-01-01

The 'secondary energetic neutral atom (ENA)' hypothesis for the ribbon feature observed by the Interstellar Boundary Explorer (IBEX) posits that the neutral component of the solar wind continues beyond the heliopause and charge exchanges with interstellar ions in the Outer Heliosheath (OHS). This creates pick-up ions that gyrate about the draped interstellar magnetic field (ISMF) lines at pitch angles near 90° on the locus where the ISMF lies tangential to the heliopause and perpendicular to the heliocentric radial direction. This location closely coincides with the location of the ribbon feature according to the prevailing inferences of the ISMF orientation and draping. The locally gyrating ions undergo additional charge exchange and escape as free-flying neutral atoms, many of which travel back toward the inner solar system and are imaged by IBEX as a ribbon tracing out the locus described above. For this mechanism to succeed, the pick-up ions must diffuse in pitch angle slowly enough to permit secondary charge exchange before their pitch angle distribution substantially broadens away from 90°. Previous work using linear Vlasov dispersion analysis of parallel propagating waves has suggested that the ring distribution in the OHS is highly unstable, which, if true, would make the secondary ENA hypothesis incapable of rendering the observed ribbon. In this paper, we extend this earlier work to more realistic ring distribution functions. We find that, at the low densities necessary to produce the observed IBEX ribbon via the secondary ENA hypothesis, growth rates are highly sensitive to the temperature of the beam and that even very modest temperatures of the ring beam corresponding to beam widths of <1° are sufficient to damp the self-generated waves associated with the ring beam. Thus, at least from the perspective of linear Vlasov dispersion analysis of parallel propagating waves, there is no reason to expect that the ring distributions necessary to

Cation distribution in spinels and its effect on activity pick-up and passivation behaviour

International Nuclear Information System (INIS)

Subramanian, H.; Velmurugan, S.; Narasimhan, S.V.

2000-01-01

Spinels are found to be the major corrosion products in the primary heat transport system or nuclear reactors. These corrosion products are activated in the core and are picked up on the deposited corrosion product oxides, which lead to the radiation field buildup on out of core surfaces. In order to mitigate this phenomenon, it is extremely important to understand the structural changes that take place in a spinel in the primary heat transport system. Most of the spinels found in reactor systems are mixed spinels. Cation distribution in tetrahedral and octahedral sites of these spinels, which is temperature dependent, will affect the pickup of active metal ions from solution into these spinels. Distribution of cations in simple spinels was estimated by minimising the Gibbs energy change for the migration of ions between tetrahedral and octahedral sites, based on the assumption that it is the configurational entropy change for the process that dominates the distribution. Cation distribution for mixed spinels was also calculated using the same method. Energy demand for the exchange of an aqueous ion with these spinels has been estimated. (author)

On measuring the UNK SC-dipole bending strength with rotating pick-up coil

International Nuclear Information System (INIS)

Smirnov, N.L.; Tikhov, A.V.

1993-01-01

The experience in measuring the SC-dipole bending strength with the spotting method shown this measurement to be the most complicated and expensive. A convenient and simple method of rotating pick-up coil, which can not provide the required accuracy, may be used for this measurement combined with NMR measurements in the dipole central part. The physical ground and description of the method are given in the paper. The analysis of the errors and measurement results of the SPDMI SC-dipoles are presented. 9 refs..; 7 figs

Material flow enhancement in production assembly lines under application of zoned order picking systems

Directory of Open Access Journals (Sweden)

D. Živanić

2014-10-01

Full Text Available Introduced research work relates to the possibility of material flow enhancement in production systems, with the apostrophe on material order picking in production assembly lines. The paper presents basic rules and the results related to formed computer models of zoned order picking systems under the application of developed bound cavities method.

MgB2 magnetometer with a directly coupled pick-up loop

Science.gov (United States)

Portesi, C.; Mijatovic, D.; Veldhuis, D.; Brinkman, A.; Monticone, E.; Gonnelli, R. S.

2006-05-01

In this work, we show the results obtained in the fabrication and characterization of an MgB2 magnetometer with a directly coupled pick-up loop. We used an all in situ technique for fabricating magnesium diboride films, which consists of the co-evaporation of B and Mg by means of an e-gun and a resistive heater respectively. Consequently, we realized the superconducting device, which incorporates two nanobridges as weak links in a superconducting loop. The nanobridges were realized by focused ion beam milling; they were 240 nm wide and had a critical current density of 107 A cm-2. The magnetometer was characterized at different temperatures and also measurements of the noise levels have been performed. The device shows Josephson quantum interference up to 20 K and the calculated effective area at low temperatures was 0.24 mm2. The transport properties of the magnetometer allow determining fundamental materials properties of the MgB2 thin films, such as the penetration depth.

Pick up of cesium and cobalt activity by oxide sludge in steam generator

International Nuclear Information System (INIS)

Rufus, A.L.; Subramanian, H.; Velmurugan, S.; Santanu Bera; Narasimhan, S.V.; Reddy, G.L.N.; Sankara Sastry, V.

2002-01-01

A pinhole developed near the tube sheet in the steam generator (SG) tube of a pressurised heavy water reactor (PHWR) caused leak of primary coolant containing radioactive contaminants ( 137 Cs, 134 Cs and 60 Co) to the shell side. The sludge collected from the tube sheet region was found to have adsorbed these radionuclides at the high temperature (230-240 deg C) that prevailed in the SG. An attempt has been made to evaluate the quantity of activity retained in the various oxide phases that constitute the sludge and their mode of pick-up. The sludge was characterized by XRD and XPS, which showed the presence of various oxides of iron, copper and nickel along with the silicates of calcium, magnesium and aluminium. Gamma-spectrometry of the sludge confirmed the presence of 137 Cs, 134 Cs and 60 Co to an extent of 7.6, 1.3 and 0.9 μCi/g of sludge, respectively. Selective dissolution in various EDTA based formulations and equilibration with nitric acid and magnesium chloride solutions helped to understand the quantity of activity adsorbed by various constituents of the sludge. It was concluded that a major portion of cesium was picked up by a reversible ion exchange process on various oxide constituents and about 10% by an irreversible specific adsorption process on insoluble silicates. Also, it was proved that 60 Co was specifically adsorbed over the oxides of iron and nickel. (author)

Longitudinal beam diagnostic from a distributed electrostatic pick-up in CERN's ELENA ring

CERN Document Server

Angoletta, M E; Federmann, S; Molendijk, J; Sanchez-Quesada, J; Secouet, P J; Søby, L; Pedersen, F; Timmins, M

2013-01-01

The CERN Extra Low ENergy Antiproton (ELENA) Ring is a new synchrotron that will be commissioned in 2016 to further decelerate the antiprotons coming from CERN’s Antiproton Decelerator (AD). Required longitudinal diagnostics include the intensity measurement for bunched and debunched beam and the measurement of Dp/p to assess the electron cooling performance. A novel method for the calculation of these parameters is proposed for ELENA, where signals from the twenty electrostatic Pick-Ups (PU) used for orbit measurements will be combined to improve the signal-to-noise ratio. This requires that the signals be digitally down-converted, rotated and summed so that the many electrostatic PUs will function as a single, distributed PU from the processing system viewpoint. This method includes some challenges and will not be used as the baseline longitudinal diagnostics for the initial ELENA operation. This paper gives an overview of the hardware and digital signal processing involved, as well as of the challenges t...

Develop and pilot test smart phone/tablet app for paratransit demand-response passenger pick-up alerts to assist passengers with disabilities and reduce no-shows and dwell times.

Science.gov (United States)

2016-12-01

This research produced an arrival notification system for paratransit passengers with disabilities. Almost all existing curb-to-curb paratransit services have significantly large pick-up time window ranging from 20 to 40 minutes from the scheduled ti...

A REVIEW OF ORDER PICKING IMPROVEMENT METHODS

Directory of Open Access Journals (Sweden)

Johan Oscar Ong

2014-09-01

Full Text Available As a crucial and one of the most important parts of warehousing, order picking often raises discussion between warehousing professionals, resulting in various studies aiming to analyze how order picking activity can be improved from various perspective. This paper reviews various past researches on order picking improvement, and the various methods those studies analyzed or developed. This literature review is based on twenty research articles on order picking improvement viewed from four different perspectives: Automation (specifically, stock-to-picker system, storage assignment policy, order batching, and order picking sequencing. By reviewing these studies, we try to identify the most prevalent order picking improvement approach to order picking improvement. Keywords: warehousing; stock-to-picker; storage assignment; order batching; order picking sequencing; improvement

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

International Nuclear Information System (INIS)

Lin, Yow-Jon; Lin, Jian-Huang

2014-01-01

Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

Order picking in carousel systems under the nearest item heuristic

NARCIS (Netherlands)

Litvak, Nelli; Zijm, Willem H.M.; Adan, I.J.B.F.; Wessels, J.

2001-01-01

A carousel is a computer-controlled warehousing system, which is widely used to store small- and medium-sized goods. One of the most important performance characteristics of such systems is the pick time of an order, which mostly depends on the travel time of the carousel. In this article, we

Order picking in carousel systems under the nearest item heuristic

NARCIS (Netherlands)

Litvak, Nelli; Adan, I.J.B.F.; Wessels, J.; Zijm, Willem H.M.

2000-01-01

A carousel is a computer controlled warehousing system, which is widely used to store small and medium sized goods. One of the most important performance characteristics of such systems is the pick time of an order, which mostly depends on the travel time of the carousel. In this paper we consider

Order picking in carousel systems under the nearest item heuristic

NARCIS (Netherlands)

Litvak, Nelli; Adan, I.J.B.F.; Wessels, J.B.; Zijm, Willem H.M.

2001-01-01

A carousel is a computer-controlled warehousing system, which is widely used to store small- and medium-sized goods+ One of the most important performance character- istics of such systems is the pick time of an order, which mostly depends on the travel time of the carousel+ In this article, we

A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.

Science.gov (United States)

Hwang, Hyeon Jun; Chang, Kyoung Eun; Yoo, Won Beom; Shim, Chang Hoo; Lee, Sang Kyung; Yang, Jin Ho; Kim, So-Young; Lee, Yongsu; Cho, Chunhum; Lee, Byoung Hun

2017-02-16

We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.73 eV, and an on-off ratio of up to 10 7 was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.

Factors affecting the outcome of in vitro bovine embryo production using ovum pick-up-derived cumulus oocyte complexes

NARCIS (Netherlands)

Merton, J.S.

2013-01-01

Optimization of bovine ovum pick up (OPU) followed by in vitro embryo production (IVP) has been driven by the desire of both beef and dairy cattle breeders to enhance genetic improvement. The work presented in this thesis focuses on optimizing the efficiency and efficacy of the OPU-IVP program.

Laparoscopic ovarian biopsy pick-up method for goats.

Science.gov (United States)

Brandão, Fabiana A S; Alves, Benner G; Alves, Kele A; Souza, Samara S; Silva, Yago P; Freitas, Vicente J F; Teixeira, Dárcio I A; Gastal, Eduardo L

2018-02-01

Biopsy pick-up (BPU) has been considered a safe method to harvest ovarian fragments from live animals. However, no studies have been reported on the use of BPU to collect in vivo ovarian tissue in goats. The goals of this study were: (i) to test different biopsy needle sizes to collect ovarian tissue in situ using the BPU method (Experiment 1), and (ii) to study ovarian tissue features such as preantral follicle density, morphology, class distribution, and stromal cell density in ovarian fragments obtained in vivo through a laparoscopic BPU method (Experiment 2). In Experiment 1, goat ovaries (n = 20) were collected in a slaughterhouse and subjected to in situ BPU. Three needles (16, 18, and 20G) were tested. In Experiment 2, the most efficient biopsy needle from Experiment 1 was used to perform laparoscopic BPU in goats (n = 8). In Experiment 1, the recovery rate was greater (P rate). Overall, 2054 preantral follicles were recorded in 5882 histological sections analyzed. Mean preantral follicular density was 28.4 ± 1.3 follicles per cm 2 . The follicular density differed (P rate in goats. Furthermore, this study described for the first time that goat ovarian biopsy fragments have a high heterogeneity in follicular density, morphology, class distribution, and stromal cell density. Copyright © 2017 Elsevier Inc. All rights reserved.

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application

International Nuclear Information System (INIS)

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Osman, Mohd Nizam

2011-01-01

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Design and manufacture of mechanical forceps to pick up objects at the bottom of the pool reactor TRIGA MK II

International Nuclear Information System (INIS)

Kankunku, K.P.; Lukanda, M.V.

2011-01-01

This design helps us to pick up any objects felt in bottom of swimming pool, which is a radioactive area, due to the presence of spent nuclear fuel. Its great advantage is its sample designing and made with local material.

Laparoscopic ovum pick-up in spotted paca ( Cuniculus pacas

Directory of Open Access Journals (Sweden)

F.F.P.C. Barros

2016-08-01

Full Text Available ABSTRACT The aim of this work is study the laparoscopic ovum pick-up (LapOPU technique in spotted paca, describing surgery details, complications and oocyte recovery rate. Nine healthy adult non-pregnant captive females were used, in a total of 39 procedures. When the surgical plane of anaesthesia was achieved, the females were positioned at 20º Trendelenburg. Three 6mm trocars were placed on right and left inguinal and hypogastric regions. Abdomen was inflated with CO2 and the intra-abdominal pressure was stablished in 10mmHg. Follicular punctures were performed moving the ovaries with atraumatic forceps. For punctures, an 18-gauge 3.5 inch long needle attached to a vacuum system with pressure not exceeding 65mmHg was used. Oocytes were recovered into 50mL centrifuge tubes with media composed of PBS supplemented with 10 IU/mL of heparin and kept at 36°C. R Software was used for statistical analysis. Data normality distribution (Shapiro test and variances homoscedasticity (Bartlett test were tested and descriptive statistics (mean±SD was used to present the results. It was only possible to perform LapOPU in 30 of 39 laparoscopies (76.92%. The surgical total time was 37.34 ± 18.53 minutes. The total number of visualized follicles, aspirated follicles, and retrieved oocytes were 502, 415, and 155, respectively. And the same parameters per animal were: 14.34 ± 12.23, 11.86 ± 10.03, and 4.43 ± 4.69 respectively. Oocyte recovery rate was 32.56 ± 27.32%. In conclusion, caudal positioning of portals with slight triangulation allows good viewing of the abdominal cavity and eases the manipulation of the ovaries. Thus this described LapOPU technique is feasible in spotted paca and easy to perform.

Schottky junction photovoltaic devices based on CdS single nanobelts.

Science.gov (United States)

Ye, Y; Dai, L; Wu, P C; Liu, C; Sun, T; Ma, R M; Qin, G G

2009-09-16

Schottky junction photovoltaic (PV) devices were fabricated on single CdS nanobelts (NBs). Au was used as the Schottky contact, and In/Au was used as the ohmic contact to CdS NB. Typically, the Schottky junction exhibits a well-defined rectifying behavior in the dark with a rectification ratio greater than 10(3) at +/- 0.3 V; and the PV device exhibits a clear PV behavior with an open circuit photovoltage of about 0.16 V, a short circuit current of about 23.8 pA, a maximum output power of about 1.6 pW, and a fill factor of 42%. Moreover, the output power can be multiplied by connecting two or more of the Schottky junction PV devices, made on a single CdS NB, in parallel or in series. This study demonstrates that the 1D Schottky junction PV devices, which have the merits of low cost, easy fabrication and material universality, can be an important candidate for power sources in nano-optoelectronic systems.

MgB{sub 2} magnetometer with a directly coupled pick-up loop

Energy Technology Data Exchange (ETDEWEB)

Portesi, C [Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, I-10135 Turin (Italy); Mijatovic, D [Low Temperature Division and Mesa Research Institute, University of Twente, PO Box 217, 7500 AE Enschede (Netherlands); Veldhuis, D [Low Temperature Division and Mesa Research Institute, University of Twente, PO Box 217, 7500 AE Enschede (Netherlands); Brinkman, A [Low Temperature Division and Mesa Research Institute, University of Twente, PO Box 217, 7500 AE Enschede (Netherlands); Monticone, E [Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, I-10135 Turin (Italy); Gonnelli, R S [INFM, Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi 24, I-10129 Turin (Italy)

2006-05-15

In this work, we show the results obtained in the fabrication and characterization of an MgB{sub 2} magnetometer with a directly coupled pick-up loop. We used an all in situ technique for fabricating magnesium diboride films, which consists of the co-evaporation of B and Mg by means of an e-gun and a resistive heater respectively. Consequently, we realized the superconducting device, which incorporates two nanobridges as weak links in a superconducting loop. The nanobridges were realized by focused ion beam milling; they were 240 nm wide and had a critical current density of 10{sup 7} A cm{sup -2}. The magnetometer was characterized at different temperatures and also measurements of the noise levels have been performed. The device shows Josephson quantum interference up to 20 K and the calculated effective area at low temperatures was 0.24 mm{sup 2}. The transport properties of the magnetometer allow determining fundamental materials properties of the MgB{sub 2} thin films, such as the penetration depth.

Schottky diode model for non-parabolic dispersion in narrow-gap semiconductor and few-layer graphene

Science.gov (United States)

Ang, Yee Sin; Ang, L. K.; Zubair, M.

Despite the fact that the energy dispersions are highly non-parabolic in many Schottky interfaces made up of 2D material, experimental results are often interpreted using the conventional Schottky diode equation which, contradictorily, assumes a parabolic energy dispersion. In this work, the Schottky diode equation is derived for narrow-gap semiconductor and few-layer graphene where the energy dispersions are highly non-parabolic. Based on Kane's non-parabolic band model, we obtained a more general Kane-Schottky scaling relation of J (T2 + γkBT3) which connects the contrasting J T2 in the conventional Schottky interface and the J T3 scaling in graphene-based Schottky interface via a non-parabolicity parameter, γ. For N-layer graphene of ABC -stacking and of ABA -stacking, the scaling relation follows J T 2 / N + 1 and J T3 respectively. Intriguingly, the Richardson constant extracted from the experimental data using an incorrect scaling can differ with the actual value by more than two orders of magnitude. Our results highlights the importance of using the correct scaling relation in order to accurately extract important physical properties, such as the Richardson constant and the Schottky barrier's height.

Pick disease

Science.gov (United States)

Semantic dementia; Dementia - semantic; Frontotemporal dementia; FTD; Arnold Pick disease; 3R tauopathy ... doctors tell Pick disease apart from Alzheimer disease. (Memory loss is often the main, and earliest, symptom ...

Cherry Picking Robot Vision Recognition System Based on OpenCV

Directory of Open Access Journals (Sweden)

Zhang Qi Rong

2016-01-01

Full Text Available Through OpenCV function, the cherry in a natural environment image after image preprocessing, color recognition, threshold segmentation, morphological filtering, edge detection, circle Hough transform, you can draw the cherry’s center and circular contour, to carry out the purpose of the machine picking. The system is simple and effective.

Testbeam Studies on Pick-Up in Sensors with Embedded Pitch Adapters

CERN Document Server

Rehnisch, Laura; The ATLAS collaboration

2017-01-01

For silicon strip sensors, the tracking information specifications can lead to challenging requirements for wire bonding. A common strategy is to use external pitch adapters to facilitate this step in the production of detector modules. A novel approach previously discussed in [1], is to implement the pitch adapters in the sensor, by embedding a second layer of metal tracks. The use of these embedded pitch adapters (EPAs) decouples the bond pad layout of the sensor from its implant layout by moving the adaption to the sensor production step. This solution, however, can yield the risk of performance losses due to the increase of inter-strip capacitance, or unwanted capacitive coupling between the metal layers (cross-talk) or the silicon bulk and the second metal layer (pick-up). In the prototyping stage of the ATLAS tracker end-cap upgrade, where different bond-pad layouts on sensor and readout chip lead to extremely challenging wire-bonding conditions, sensors with different geometries of EPA implementations ...

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

International Nuclear Information System (INIS)

Chawanda, A.; Coelho, S.M.M.; Auret, F.D.; Mtangi, W.; Nyamhere, C.; Nel, J.M.; Diale, M.

2012-01-01

Highlights: ► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I–V, C–V and SEM techniques under various annealing conditions. ► The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ► Thermal stability of these diodes is maintained up to 500 °C anneal. ► SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 °C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C.

Schottky spectra and crystalline beams

International Nuclear Information System (INIS)

Pestrikov, D.V.

1996-01-01

In this paper we revise the current dependence of the Schottky noise power of a cooled proton beam previously measured at NAP-M. More careful study of experimental data indicates a linear decrease in the inverse Schottky noise power with an increase in the beam intensity (N). The root of this function determines a threshold current which occurs at N = N th ≅1.2 x 10 8 particles. The inspection of measured Schottky spectra shows that this threshold does not correspond to some collective instability of the measured harmonic of the linear beam density. The found value of N th does not depend on the longitudinal beam temperature. For the case of NAP-M lattice, the study of the spectral properties of the Schottky noise in the crystalline string predicts the current dependence of the equilibrium momentum spread of the beam, which qualitatively agrees with that, recalculated from the NAP-M data. (orig.)

Longitudinal Schottky noise of intense beam

International Nuclear Information System (INIS)

Pestrikov, D.V.

1990-01-01

Some phenomena, which can be observed in the longitudinal Schottky spectra in storage ring with electron cooling as well as some technical details, which can be useful for the models of fitting are reviewed. Results shows that both the spectra and the power of the Schottky noise of the coasting beam are very sensitive to collective behaviour of the beam. This can be used for fitting of Schottky noise measurements and recalculation of beam parameters, parameters of cooling device. 9 refs.; 4 figs

High-temperature current conduction through three kinds of Schottky diodes

International Nuclear Information System (INIS)

Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

2009-01-01

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

AFM picking-up manipulation of the metaphase chromosome fragment by using the tweezers-type probe

International Nuclear Information System (INIS)

Yamanaka, Keiichiro; Saito, Masato; Shichiri, Motoharu; Sugiyama, Sigeru; Takamura, Yuzuru; Hashiguchi, Gen; Tamiya, Eiichi

2008-01-01

We have studied the development of a new procedure based on atomic force microscopy (AFM) for the analysis of metaphase chromosome. The aim of this study was to obtain detailed information about the specific locations of genes on the metaphase chromosome. In this research, we performed the manipulation of the metaphase chromosome by using novel AFM probes to obtain chromosome fragments of a smaller size than the ones obtained using the conventional methods, such as glass microneedles. We could pick up the fragment of the metaphase chromosome dissected by the knife-edged probe by using our tweezers-type probe

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

Energy Technology Data Exchange (ETDEWEB)

Chawanda, A., E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Coelho, S.M.M.; Auret, F.D.; Mtangi, W. [Department of Physics, University of Pretoria, 0002 (South Africa); Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Nel, J.M.; Diale, M. [Department of Physics, University of Pretoria, 0002 (South Africa)

2012-02-05

Highlights: Black-Right-Pointing-Pointer Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. Black-Right-Pointing-Pointer The variation of the electrical and structural properties can be due to effects phase transformation during annealing. Black-Right-Pointing-Pointer Thermal stability of these diodes is maintained up to 500 Degree-Sign C anneal. Black-Right-Pointing-Pointer SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 Degree-Sign C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C.

Schottky signal analysis: tune and chromaticity computation

CERN Document Server

Chanon, Ondine

2016-01-01

Schottky monitors are used to determine important beam parameters in a non-destructive way. The Schottky signal is due to the internal statistical fluctuations of the particles inside the beam. In this report, after explaining the different components of a Schottky signal, an algorithm to compute the betatron tune is presented, followed by some ideas to compute machine chromaticity. The tests have been performed with offline and/or online LHC data.

Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

2014-04-15

In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

Pico Lantern: a pick-up projector for augmented reality in laparoscopic surgery.

Science.gov (United States)

Edgcumbe, Philip; Pratt, Philip; Yang, Guang-Zhong; Nguan, Chris; Rohling, Rob

2014-01-01

The Pico Lantern is proposed as a new tool for guidance in laparoscopic surgery. Its miniaturized design allows it to be picked up by a laparoscopic tool during surgery and tracked directly by the endoscope. By using laser projection, different patterns and annotations can be projected onto the tissue surface. The first explored application is surface reconstruction. The absolute error for surface reconstruction using stereo endoscopy and untracked Pico Lantern for a plane, cylinder and ex vivo kidney is 2.0 mm, 3.0 mm and 5.6 mm respectively. The absolute error using a mono endoscope and a tracked Pico Lantern for the same plane, cylinder and kidney is 0.8mm, 0.3mm and 1.5mm respectively. The results show the benefit of the wider baseline produced by tracking the Pico Lantern. Pulsatile motion of a human carotid artery is also detected in vivo. Future work will be done on the integration into standard and robot-assisted laparoscopic surgery.

Some calculated (p,α) cross-sections using the alpha particle knock-on and triton pick-up reaction mechanisms: An optimisation of the single-step Feshbach-Kerman-Koonin (FKK) theory

Energy Technology Data Exchange (ETDEWEB)

Olise, Felix S.; Ajala, Afis; Olamiyl, Hezekiah B. [Dept. of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife (Nigeria)

2016-04-15

The Feshbach-Kerman-Koonin (FKK) multi-step direct (MSD) theory of pre-equilibrium reactions has been used to compute the single-step cross-sections for some (p,α) reactions using the knock-on and pick-up reaction mechanisms at two incident proton energies. For the knock-on mechanism, the reaction was assumed to have taken place by the direct ejection of a preformed alpha cluster in a shell-model state of the target. But the reaction was assumed to have taken place by the pick-up of a preformed triton cluster (also bound in a shell-model state of the target core) by the incident proton for the pick-up mechanism. The Yukawa forms of potential were used for the proton-alpha (for the knock-on process) and proton-triton (for the pick-up process) interaction and several parameter sets for the proton and alpha-particle optical potentials. The calculated cross-sections for both mechanisms gave satisfactory fits to the experimental data. Furthermore, it has been shown that some combinations of the calculated distorted wave Born approximation cross-sections for the two reaction mechanisms in the FKK MSD theory are able to give better fits to the experimental data, especially in terms of range of agreement. In addition, the theory has been observed to be valid over a wider range of energy.

Some Calculated (p,α Cross-Sections Using the Alpha Particle Knock-On and Triton Pick-Up Reaction Mechanisms: An Optimisation of the Single-Step Feshbach–Kerman–Koonin (FKK Theory

Directory of Open Access Journals (Sweden)

Felix S. Olise

2016-04-01

Full Text Available The Feshbach–Kerman–Koonin (FKK multi-step direct (MSD theory of pre-equilibrium reactions has been used to compute the single-step cross-sections for some (p,α reactions using the knock-on and pick-up reaction mechanisms at two incident proton energies. For the knock-on mechanism, the reaction was assumed to have taken place by the direct ejection of a preformed alpha cluster in a shell-model state of the target. But the reaction was assumed to have taken place by the pick-up of a preformed triton cluster (also bound in a shell-model state of the target core by the incident proton for the pick-up mechanism. The Yukawa forms of potential were used for the proton-alpha (for the knock-on process and proton-triton (for the pick-up process interaction and several parameter sets for the proton and alpha-particle optical potentials. The calculated cross-sections for both mechanisms gave satisfactory fits to the experimental data. Furthermore, it has been shown that some combinations of the calculated distorted wave Born approximation cross-sections for the two reaction mechanisms in the FKK MSD theory are able to give better fits to the experimental data, especially in terms of range of agreement. In addition, the theory has been observed to be valid over a wider range of energy.

A Port-Hamiltonian Approach to Visual Servo Control of a Pick and Place System

NARCIS (Netherlands)

Dirksz, Daniel A.; Scherpen, Jacquelien M. A.; Steinbuch, Maarten

In this paper, we take a port-Hamiltonian approach to address the problem of image-based visual servo control of a pick and place system. Through a coordinate transformation and a passive interconnection between mechanical system and camera dynamics we realize a closed-loop system that is

Niemann-Pick disease

Science.gov (United States)

NPD; Sphingomyelinase deficiency; Lipid storage disorder - Niemann-Pick disease; Lysosomal storage disease - Niemann-Pick ... lipofuscinoses or Batten disease (Wolman disease, cholesteryl ... metabolism of lipids. In: Kliegman RM, Stanton BF, St. Geme JW, ...

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

Science.gov (United States)

Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

2015-05-06

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

A port-Hamiltonian approach to visual servo control of a pick and place system

NARCIS (Netherlands)

Dirksz, Daniel A.; Scherpen, Jacquelien M.A.

2012-01-01

In this paper we take a port-Hamiltonian approach to address the problem of image-based visual servo control of a pick and place system. We realize a closed-loop system, including the nonlinear camera dynamics, which is port-Hamiltonian. Although the closed-loop system is nonlinear, the resulting

An automated framework for NMR resonance assignment through simultaneous slice picking and spin system forming

KAUST Repository

Abbas, Ahmed

2014-04-19

Despite significant advances in automated nuclear magnetic resonance-based protein structure determination, the high numbers of false positives and false negatives among the peaks selected by fully automated methods remain a problem. These false positives and negatives impair the performance of resonance assignment methods. One of the main reasons for this problem is that the computational research community often considers peak picking and resonance assignment to be two separate problems, whereas spectroscopists use expert knowledge to pick peaks and assign their resonances at the same time. We propose a novel framework that simultaneously conducts slice picking and spin system forming, an essential step in resonance assignment. Our framework then employs a genetic algorithm, directed by both connectivity information and amino acid typing information from the spin systems, to assign the spin systems to residues. The inputs to our framework can be as few as two commonly used spectra, i.e., CBCA(CO)NH and HNCACB. Different from the existing peak picking and resonance assignment methods that treat peaks as the units, our method is based on \\'slices\\', which are one-dimensional vectors in three-dimensional spectra that correspond to certain (N, H) values. Experimental results on both benchmark simulated data sets and four real protein data sets demonstrate that our method significantly outperforms the state-of-the-art methods while using a less number of spectra than those methods. Our method is freely available at http://sfb.kaust.edu.sa/Pages/Software.aspx. © 2014 Springer Science+Business Media.

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

OpenAIRE

Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

2015-01-01

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28?eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increa...

Solar cycle variation of interstellar neutral He, Ne, O density and pick-up ions along the Earth's orbit

OpenAIRE

Sokół, Justyna M.; Bzowski, Maciej; Kubiak, Marzena A.; Möbius, Eberhard

2016-01-01

We simulated the modulation of the interstellar neutral (ISN) He, Ne, and O density and pick-up ion (PUI) production rate and count rate along the Earth's orbit over the solar cycle from 2002 to 2013 to verify if solar cycle-related effects may modify the inferred ecliptic longitude of the ISN inflow direction. We adopted the classical PUI model with isotropic distribution function and adiabatic cooling, modified by time- and heliolatitude-dependent ionization rates and non-zero injection spe...

Warehouse Order-Picking Process. Review

Directory of Open Access Journals (Sweden)

E. V. Korobkov

2015-01-01

Full Text Available This article describes basic warehousing activities, namely: movement, information storage and transfer, as well as connections between typical warehouse operations (reception, transfer, assigning storage position and put-away, order-picking, hoarding and sorting, cross-docking, shipping. It presents a classification of the warehouse order-picking systems in terms of manual labor on offer as well as external (marketing channels, consumer’s demand structure, supplier’s replenishment structure and inventory level, total production demand, economic situation and internal (mechanization level, information accessibility, warehouse dimensionality, method of dispatch for shipping, zoning, batching, storage assignment method, routing method factors affecting the designing systems complexity. Basic optimization considerations are described. There is a literature review on the following sub-problems of planning and control of orderpicking processes.A layout design problem has been taken in account at two levels — external (facility layout problem and internal (aisle configuration problem. For a problem of distributing goods or stock keeping units the following methods are emphasized: random, nearest open storage position, and dedicated (COI-based, frequency-based distribution, as well as class-based and familygrouped (complimentary- and contact-based one. Batching problem can be solved by two main methods, i.e. proximity order batching (seed and saving algorithms and time-window order batching. There are two strategies for a zoning problem: progressive and synchronized, and also a special case of zoning — bucket brigades method. Hoarding/sorting problem is briefly reviewed. Order-picking routing problem will be thoroughly described in the next article of the cycle “Warehouse order-picking process”.

Vehicle Routing Problem with Time Windows and Simultaneous Delivery and Pick-Up Service Based on MCPSO

Directory of Open Access Journals (Sweden)

Xiaobing Gan

2012-01-01

Full Text Available This paper considers two additional factors of the widely researched vehicle routing problem with time windows (VRPTW. The two factors, which are very common characteristics in realworld, are uncertain number of vehicles and simultaneous delivery and pick-up service. Using minimization of the total transport costs as the objective of the extension VRPTW, a mathematic model is constructed. To solve the problem, an efficient multiswarm cooperative particle swarm optimization (MCPSO algorithm is applied. And a new encoding method is proposed for the extension VRPTW. Finally, comparing with genetic algorithm (GA and particle swarm optimization (PSO algorithm, the MCPSO algorithm performs best for solving this problem.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

Science.gov (United States)

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

Science.gov (United States)

Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

2017-06-01

The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

Picking Robot Arm Trajectory Planning Method

Directory of Open Access Journals (Sweden)

Zhang Zhiyong

2014-01-01

Full Text Available The picking robot arm is scheduled to complete picking tasks in the working space, to overcome the shaking vibration to improve the picking stability, its movement should follow specific consistence trajectory points. Usually we should give definite multiple feature picking points, map their inverse kinematics to the joint space, establish motion equation for the corresponding point in the joint space, then follow these equations motion for the interpolation on the joint so that we can meet the movement requirements. Trajectory planning is decisive significance for accuracy and stability of controlling robot arm. The key issue that picking arm complete picking task will be come true by trajectory planning, namely, robot arm track the desired trajectory. which based on kinematics and statics picking analysis in a joint space according to the requirements of picking tasks, and obtain the position and orientation for picking robot arm, study and calculate the theory of trajectory parameters timely.

Schottky contacts to In2O3

Directory of Open Access Journals (Sweden)

H. von Wenckstern

2014-04-01

Full Text Available n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

Durability of PEDOT: PSS-pentacene Schottky diode

International Nuclear Information System (INIS)

Kang, K S; Lim, H K; Cho, K Y; Han, K J; Kim, Jaehwan

2008-01-01

The durability and failure cause of a polymer Schottky diode made with PEDOT : PSS-pentacene were investigated. A polymer Schottky diode was fabricated by dissolving pentacene in N-methylpyrrolidone (NMP) and mixing with PEDOT : PSS. Pentacene solution having a maximum concentration of approximately 9.7 mmoles was prepared by simply stirring the solution at room temperature for 36 h. As the pentacene concentration increased, the absorption of the broad UV regime increased dramatically. However, absorption peaks of pentacene at 301 and 260 nm were not observed for the PEDOT : PSS-pentacene. A three-layered polymer Schottky diode was fabricated and its current-voltage (I-V) characteristic was evaluated. The current was reduced by 7% in the first 50 min and then stabilized during biased electrical field sweeps. After 500 and 800 min, catastrophic failure occurred. FESEM images revealed that the electrode damage caused catastrophic failure of the Schottky diode. (fast track communication)

Developments at an electrostatic cryogenic storage ring for electron-cooled keV energy ion beams

International Nuclear Information System (INIS)

Vogel, Stephen

2016-01-01

This work is devoted to final setup activities and the commissioning of an electrostatic cryogenic storage ring (CSR) at the Max Planck Institute for Nuclear Physics (MPIK) in Heidelberg. The first cryogenic operation of CSR in 2015 has been documented and characterized using a set of non-destructive beam diagnostic tools developed within this work. These are (1) the current pick-up system for the determination of the current of the stored ion beam and its velocity, (2) a position pick-up system for measuring the transverse position of the ion beam center at six symmetric locations of the storage ring circumference, and (3) a Schottky pick-up system for the monitoring of coasting ion beams. Despite the requirements imposed by the cryogenic operation, the developed diagnostic system demonstrated its full functionality. First characterizations of the storage ring properties and the performance of the diagnostic system are presented. Based on previous work, an electron cooling system for CSR has been developed and largely realized. With the implementation into CSR in 2016, the electron cooler will enhance the storage ring into a unique experimental facility for electron-ion collision studies. With this CSR is on the track to become the first cryogenic storage ring featuring actively cooled ion beams.

Flexible IGZO Schottky diodes on paper

Science.gov (United States)

Kaczmarski, Jakub; Borysiewicz, Michał A.; Piskorski, Krzysztof; Wzorek, Marek; Kozubal, Maciej; Kamińska, Eliana

2018-01-01

With the development of novel device applications, e.g. in the field of robust and recyclable paper electronics, came an increased demand for the understanding and control of IGZO Schottky contact properties. In this work, a fabrication and characterization of flexible Ru-Si-O/IGZO Schottky barriers on paper is presented. It is found that an oxygen-rich atomic composition and microstructure of Ru-Si-O containing randomly oriented Ru inclusions with diameter of 3-5 nm embedded in an amorphous SiO2 matrix are effective in preventing interfacial reactions in the contact region, allowing to avoid pre-treatment of the semiconductor surface and fabricate reliable diodes at room temperature characterized by Schottky barrier height and ideality factor equal 0.79 eV and 2.13, respectively.

Gamma irradiation testing of prototype ITER in-vessel magnetic pick-up coils

International Nuclear Information System (INIS)

Vermeeren, Ludo; Leysen, Willem

2013-01-01

Highlights: ► We tested five prototype ITER in-vessel coils up to a gamma dose of 72 MGy. ► Before and after irradiation thermal tests were also performed from 30 °C till 130 °C. ► The continuity resistances and the insulation resistances were continuously monitored. ► The observed behavior of all coils was satisfactory in all conditions. ► For the further design the mechanical robustness should be taken into account. -- Abstract: To fulfill the requirements for ITER in-vessel magnetic diagnostics, several coil prototypes have been developed, aiming at minimizing the disturbing effects of temperature gradients and radiation induced phenomena. As a first step in the radiation resistance testing of these prototypes, an in-situ high dose rate gamma radiation test on a selection of prototypes was performed. The aim of this test was to get a first experimental feedback regarding the behavior of the pick-up coil prototypes under radiation. Five prototypes (a coil wound with glass-insulated copper wire, two LTCC coils and two HTCC coils) were irradiated at a dose rate of 46 kGy/h up to a total dose of 72 MGy and at a temperature of 50 °C. During the irradiation, the continuity resistances and the insulation resistances were continuously measured. Before and after irradiation reference data were recorded as a function of temperature (from 30 °C to 130 °C). This paper includes the results of the temperature and irradiation tests and a discussion of the behavior of the prototype coils in terms of electrical and mechanical properties

Effect of frequency of clinic visits and medication pick-up on antiretroviral treatment outcomes: a systematic literature review and meta-analysis.

Science.gov (United States)

Mutasa-Apollo, Tsitsi; Ford, Nathan; Wiens, Matthew; Socias, Maria Eugenia; Negussie, Eyerusalem; Wu, Ping; Popoff, Evan; Park, Jay; Mills, Edward J; Kanters, Steve

2017-07-21

Expanding and sustaining antiretroviral therapy (ART) coverage may require simplified HIV service delivery strategies that concomitantly reduce the burden of care on the health system and patients while ensuring optimal outcomes. We conducted a systematic review to assess the impact of reduced frequency of clinic visits and drug dispensing on patient outcomes. As part of the development process of the World Health Organization antiretroviral (ARV) guidelines, we systematically searched medical literature databases for publications up to 30 August 2016. Information was extracted on trial characteristics, patient characteristics and the following outcomes: mortality, morbidity, treatment adherence, retention, patient and provider acceptability, cost and patients exiting the programme. When feasible, conventional pairwise meta-analyses were conducted. Results and discussion Of 6443 identified citations, 21 papers, pertaining to 16 studies, were included in this review, with 11 studies contributing to analyses. Although analyses were feasible, they were limited by the sparse evidence base, despite the importance of the research area, and relatively low quality. Comparative analyses of eight studies reporting on frequency of clinic visits showed that less frequent clinic visits led to higher odds of being retained in care (odds ratio [OR]: 1.90; 95% CI: 1.21-2.99). No differences were found with respect to viral failure, morbidity or mortality; however, most estimates were favourable to reduced clinic visits. Reduced frequency of ARVs pick-ups showed a trend towards better retention (OR: 1.93; 95% CI: 0.62-6.04). Strategies using community support tended to have better outcomes; however, their implementation varied, particularly by location. External validity may be questionable. Our systematic review suggests that reduction of clinical visits (and likely ARVs pick-ups) may improve clinical outcomes, and that they are a viable option to relieve health systems and reduce

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

Science.gov (United States)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

Fast and Reliable Mouse Picking Using Graphics Hardware

Directory of Open Access Journals (Sweden)

Hanli Zhao

2009-01-01

Full Text Available Mouse picking is the most commonly used intuitive operation to interact with 3D scenes in a variety of 3D graphics applications. High performance for such operation is necessary in order to provide users with fast responses. This paper proposes a fast and reliable mouse picking algorithm using graphics hardware for 3D triangular scenes. Our approach uses a multi-layer rendering algorithm to perform the picking operation in linear time complexity. The objectspace based ray-triangle intersection test is implemented in a highly parallelized geometry shader. After applying the hardware-supported occlusion queries, only a small number of objects (or sub-objects are rendered in subsequent layers, which accelerates the picking efficiency. Experimental results demonstrate the high performance of our novel approach. Due to its simplicity, our algorithm can be easily integrated into existing real-time rendering systems.

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Science.gov (United States)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Directory of Open Access Journals (Sweden)

Abdul Manaf Hashim

2011-08-01

Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

Science.gov (United States)

Nguyen, Chuong V.

2018-04-01

In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

Proposal of an efficient operation method about order processing sequence and allocating goods to racks in the automatic picking system; Jido picking system ni okeru shohin no tanawaritsuke to chumon shori junjo no koritsuka un`yo hoshiki no teian

Energy Technology Data Exchange (ETDEWEB)

Ono, T.; Kagami, A.; Kosaka, M. [Hitachi Ltd., Tokyo (Japan)

1997-07-05

The material distribution center is a facility to store the goods from a factory and to prepare to ship the goods in response to order from retail store. Recently, with multiplication of consumption market, multi-variety and less-amount of the goods, multi-frequency of delivery and time saving form order to delivery are required. As picking work to prepare the stored goods for each customer requires specially many man-hours out of the works in this center, time saving of working becomes an important problem. In this paper, for an object of the automatic picking system constructed by plural equipments and to execute picking of small goods for each order, the following two operation methods were proposed: (1) To define shelf sharing of the goods so that the picking requirement numbers for each picking hand may be uniform as well as possible in response to order distribution for each goods, and (2) to define treating sequence of order so as not to generate large difference in order treating times among each treating hand on operation in parallel. These operation methods were confirmed their total treating time saving by some experiments using actual ordered data. 7 refs., 8 figs., 6 tabs.

Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

International Nuclear Information System (INIS)

Munir, T.; Aziz, A. A.; Abdullah, M. J.; Ain, M. F.

2010-01-01

Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

The impact of COI-based storage on order-picking times

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Grzegorz Tarczyński

2017-09-01

Full Text Available Background: The increasing competitiveness on the global markets enforces the need for a fast and reliable delivery. This task is possible to perform by improving the order-picking systems. The implementation of automated storage and retrieval systems (AS/RS is not always profitable. In the warehouses where the order-picking is performed in accordance with the principle of picker-to-part rule, the picking efficiency optimization includes among others: the warehouse layout, the storage policy, the routing heuristic, the way of zoning, the order-batching method, and the sequencing of pick-lists. In the paper the impact of the storage policy on the order-picking times is checked. Methods: The influence of storage based on Heskett’s cube-per-order index (COI on the average order-picking times is analyzed. The items based on increasing values of COI index are divided on classes. To determine the demand for items the analytical function proposed by Caron is used. Results: In the paper the benefits of storage based on COI index are compared with random storage and storage based only on picking frequency. It is assumed that the bin, to which the picker collects items has limited capacity – some orders has to be divided on smaller pick-lists. The analysis was performed using simulation tools. Additionally, the algorithm (taking into account different sizes of picker’s bin for order-batching is presented. Conclusions: The analysis shows that the COI-based storage is particularly effective when the size of items increases. The COI-based curve is less skewed than the curve based only on picking frequency. The choice of storage policy should be carried out together with routing heuristic. The use of batching algorithm significantly increases the effectiveness of the order-picking process, but the optimal size of picker’s bin (and batch should be optimized with consideration the sorting process.

Polycrystalline Diamond Schottky Diodes and Their Applications.

Science.gov (United States)

Zhao, Ganming

In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

Real Time Management of the AD Schottky/BTF Beam Measurement

CERN Document Server

Angoletta, Maria Elena

2003-01-01

The AD Schottky and BTF system relies on rapid acquisition and analysis of beam quantisation noise during the AD cycle which is based on an embedded receiver and digital signal processing board hosted in a VME system. The software running in the VME sets up the embedded system and amplifiers, interfaces to the RF and control system, manages the execution speed and sequence constraints with respect to the various operating modes, schedules measurements during the AD cycle and performs post processing taking into account the beam conditions in an autonomous way. The operating modes of the instrument dynamically depend on a detailed configuration, the beam parameters during the AD cycle and optional user interaction. Various subsets of the processed data are available on line and in quasi real time for beam intensity, momentum spread and several spectrum types, which form an important part of AD operation today.

Receivers for processing electron beam pick-up electrode signals

International Nuclear Information System (INIS)

Anon.

1991-01-01

There are several methods of determining the transverse position of the electron beam, based upon sensing either the electric field, the magnetic field, or both. At the NSLS the transverse beam position monitors each consist of a set of four circular electrodes. There are 48 sets of pick-up electrodes in the X-ray ring and 24 in the VUV storage ring for determining the electron orbit, and a few extra sets installed for specialized purposes. When the beam passes between the four electrodes, charge is induced on each electrode, the amount depending upon the distance of the beam from that electrode. If V a , V b , V c and V d given by a difference between pairs of electrodes normalized for variations in beam current by dividing by the sum of electrode voltages. The method of processing these signals depends upon their time structure. The electrons circulating around the vacuum chamber are concentrated in short bunches within stability buckets produced by the accelerating voltage in the RF cavities. The charges induced on the pickup electrodes then are narrow pulses, a fraction of a nanosecond long, and would result in a monopolar voltage pulses if it were not for the impedance of the cable connecting the electrode to the processing apparatus. The capacitance between each electrode and the chamber wall is only a few picofarads and is effectively in parallel with the cable impedance (50 ohms). Thus an appreciable amount of the charge flows off the electrode while the bunch is between the electrodes, resulting in potential of opposite sign as the bunch is leaving the vicinity of the electrode. The resulting signal consists of a series of bipolar pulses, each of less than one nanosecond duration

MD 2408: Study of Schottky Monitors for Q' Measurement at Injection

CERN Document Server

Tydecks, Tobias; Levens, Tom; Wendt, Manfred; Wenninger, Jorg; CERN. Geneva. ATS Department

2018-01-01

The Schottky monitors installed at the LHC enable the detection of Schottky noise of the two circulating proton / ion beams. From Schottky noise, beam parameters like tune, chromaticity, and relative emittance, can be extracted in a non-destructive and purely parasitic method of measurement. The primary goal of this MD was to study the Schottky monitors capability to reliably and accurately determine the beam chromaticities at injection energy. Furthermore, the possibility to track the beam emittance has been investigated.

Fabrication and characterization of n-AlGaAs/ GaAs Schottky diode for rectennas device application

International Nuclear Information System (INIS)

Norfarariyanti Parimon; Abdul Manaf Hashim; Farahiyah Mustafa

2009-01-01

Full text: Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectennas device application. Rectennas is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current?voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectennas device application. (author)

Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

Energy Technology Data Exchange (ETDEWEB)

Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Osman, Mohd Nizam, E-mail: manaf@fke.utm.my [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-02-15

Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

International Nuclear Information System (INIS)

Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul; Osman, Mohd Nizam

2011-01-01

Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

Habit Reversal as a Treatment for Chronic Skin Picking: A Pilot Investigation

Science.gov (United States)

Teng, Ellen J.; Woods, Douglas W.; Twohig, Michael P.

2006-01-01

The purpose of this study was to compare the effectiveness of habit reversal (HR) to a wait-list control as a treatment for chronic skin picking in adults. Twenty-five adults with a chronic skin-picking problem were randomly assigned to a wait-list control or HR group. At pretreatment, posttreatment, and a 3-month follow-up, self-reported skin…

Assignment of stock keeping units to parallel undirectional picking

Directory of Open Access Journals (Sweden)

Matthews, Jason

2015-05-01

Full Text Available An order picking system consisting of a number of parallel unidirectional picking lines is investigated. Stock keeping units (SKUs that are grouped by product type into distributions (DBNs are assigned daily to available picking lines. A mathematical programming formulation and its relaxations is presented. A greedy insertion and a greedy phased insertion are further introduced to obtain feasible results within usable computation times for all test cases. The walking distance of the pickers was shown to decrease by about 22 per cent compared with the current assignment approach. However, product handling and operational risk increases.

Adaptive Motion Planning in Bin-Picking with Object Uncertainties

DEFF Research Database (Denmark)

Iversen, Thomas Fridolin; Ellekilde, Lars-Peter; Miró, Jaime Valls

2017-01-01

Doing motion planning for bin-picking with object uncertainties requires either a re-grasp of picked objects or an online sensor system. Using the latter is advantageous in terms of computational time, as no time is wasted doing an extra pick and place action. It does, however, put extra...... requirements on the motion planner, as the target position may change on-the-fly. This paper solves that problem by using a state adjusting Partial Observable Markov Decision Process, where the state space is modified between runs, to better fit earlier solved problems. The approach relies on a set...

Possible origin and roles of nano-porosity in ZrO2 scales for hydrogen pick-up in Zr alloys

Science.gov (United States)

Lindgren, Mikaela; Geers, Christine; Panas, Itai

2017-08-01

A mechanistic understanding of Wagnerian build-up and subsequent non-Wagnerian break-down of barrier oxide upon oxidation of zirconium alloys by water is reiterated. Hydrogen assisted build-up of nano-porosity is addressed. Growth of sub-nanometer wide stalactitic pores owing to increasing aggregation of neutral oxygen vacancies offering a means to permeate hydrogen into the alloy is explored by density functional theory. The Wagnerian channel utilizes charge separation allowing charged oxygen vacancies and electrons to move separately from nominal anode to nominal cathode. This process becomes increasingly controlled by the charging of the barrier oxide resulting in sub-parabolic rate law for oxide growth. The break-down of the barrier oxide is understood to be preceded by avalanching hydrogen pick-up in the alloy. Pore mediated diffusion allows water to effectively short circuit the barrier oxide.

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

Science.gov (United States)

Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

2018-05-01

The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

Mott-Schottky analysis of thin ZnO films

International Nuclear Information System (INIS)

Windisch, Charles F. Jr.; Exarhos, Gregory J.

2000-01-01

Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

Film thickness degradation of Au/GaN Schottky contact characteristics

International Nuclear Information System (INIS)

Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

2005-01-01

Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

The Impact of Visual Guided Order Picking on Ocular Comfort, Ocular Surface and Tear Function.

Directory of Open Access Journals (Sweden)

Angelika Klein-Theyer

Full Text Available We investigated the effects of a visual picking system on ocular comfort, the ocular surface and tear function compared to those of a voice guided picking solution.Prospective, observational, cohort study.Institutional.A total of 25 young asymptomatic volunteers performed commissioning over 10 hours on two consecutive days.The operators were guided in the picking process by two different picking solutions, either visually or by voice while their subjective symptoms and ocular surface and tear function parameters were recorded.The visual analogue scale (VAS values, according to subjective dry eye symptoms, in the visual condition were significantly higher at the end of the commissioning than the baseline measurements. In the voice condition, the VAS values remained stable during the commissioning. The tear break-up time (BUT values declined significantly in the visual condition (pre-task: 16.6 sec and post-task: 9.6 sec in the right eyes, that were exposed to the displays, the left eyes in the visual condition showed only a minor decline, whereas the BUT values in the voice condition remained constant (right eyes or even increased (left eyes over the time. No significant differences in the tear meniscus height values before and after the commissioning were observed in either condition.In our study, the use of visually guided picking solutions was correlated with post-task subjective symptoms and tear film instability.

Excoriation (skin-picking disorder: a systematic review of treatment options

Directory of Open Access Journals (Sweden)

Lochner C

2017-07-01

Full Text Available Christine Lochner,1 Annerine Roos,1 Dan J Stein2 1SU/UCT MRC Unit on Risk and Resilience in Mental Disorders, Department of Psychiatry, Stellenbosch University, South Africa; 2SU/UCT MRC Unit on Risk and Resilience in Mental Disorders, Department of Psychiatry and Mental Health, University of Cape Town, South Africa Abstract: Although pathological skin-picking has been documented in the medical literature since the 19th century, it has only recently been included as a distinct entity in psychiatric classification systems. In the Diagnostic and Statistical Manual of Mental Disorders, 5th Edition and the proposed International Classification of Diseases, Eleventh Revision, excoriation (skin-picking disorder (ED, also known as neurotic excoriation, psychogenic excoriation, or dermatillomania, is described as recurrent picking of skin, leading to skin lesions and significant distress or functional impairment. ED is listed as one of the obsessive–compulsive and related disorders, given its overlap with conditions such as trichotillomania (hair-pulling disorder. Arguably, its inclusion and delineation in the diagnostic nomenclature will lead to increased awareness of the condition, more research, and ultimately in treatment advances. This systematic review aims to provide readers with an up-to-date view of current treatment options for ED. A MEDLINE search of the ED treatment literature was conducted to collate relevant articles published between 1996 and 2017. The findings indicate that a number of randomized controlled trails on ED have now been published, and that current management options include behavioral therapy (habit reversal or acceptance-enhanced behavior therapy, and medication (selective serotonin reuptake inhibitors or N-acetyl cysteine. Keywords: excoriation, skin-picking, treatment, habit reversal therapy, behavioral therapy, pharmacotherapy, systematic review

Model and observations of Schottky-noise suppression in a cold heavy-ion beam.

Science.gov (United States)

Danared, H; Källberg, A; Rensfelt, K-G; Simonsson, A

2002-04-29

Some years ago it was found at GSI in Darmstadt that the momentum spread of electron-cooled beams of highly charged ions dropped abruptly to very low values when the particle number decreased to 10 000 or less. This has been interpreted as an ordering of the ions, such that they line up after one another in the ring. We report observations of similar transitions at CRYRING, including an accompanying drop in Schottky-noise power. We also introduce a model of the ordered beam from which the Schottky-noise power can be calculated numerically. The good agreement between the model calculation and the experimental data is seen as evidence for a spatial ordering of the ions.

Silicon Schottky photovoltaic diodes for solar energy conversion

Science.gov (United States)

Anderson, W. A.

1975-01-01

Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode

International Nuclear Information System (INIS)

Liu Yebing; Hu Rui; Yang Yuqing; Wang Guanquan; Luo Shunzhong; Liu Ning

2012-01-01

An Au–Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p–n junction. The results show that the Schottky diode had a higher I sc and harder radiation tolerance but lower V oc than the p–n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries. - Highlights: ► The Schottky diode was used as the converter of the betavoltaic battery. ► The radiation damage of converter was accelerated by using alpha particles. ► The Schottky diode has higher radiation resistance than that of the p–n junction. ► The Schottky diode could still be a promising converter of the betavoltaic battery.

Using Robot Skills for Flexible Reprogramming of Pick Operations in Industrial Scenarios

DEFF Research Database (Denmark)

Andersen, Rasmus S.; Nalpantidis, Lazaros; Krüger, Volker

2014-01-01

objects on tabletops and pick them up in a user-specified manner. The programming itself is primarily done through kinesthetic teaching. We show that the skill has robustness towards the location and shape of the object to pick, and that objects from a real industrial production line can be handled. Also......, preliminary tests indicate that non-expert users can learn to use the skill after only a short introduction....

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

Science.gov (United States)

Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

2016-03-01

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

Science.gov (United States)

Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

2013-01-01

When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

Science.gov (United States)

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

2016-03-01

We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

Science.gov (United States)

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

A high-speed Schottky detector for ultra-wideband communications

DEFF Research Database (Denmark)

Valdecasa, Guillermo Silva; Cimoli, Bruno; Blanco Granja, Ángel

2017-01-01

This letter reviews the design procedure of a high‐speed Schottky video detector for high‐data‐rate communications within the ultra‐wideband (UWB) frequencies. The classic design approach for video detectors is extended with a mixer‐like analysis, which results in a more detailed assessment of th....... Using 0 dBm carrier power, the lowest measured conversion loss is 10 dB for a video frequency of 1.1 GHz and better than 13 dB up to 1.8 GHz....

Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Vali, Indudhar Panduranga [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Shetty, Pramoda Kumara, E-mail: pramod.shetty@manipal.edu [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Mahesha, M.G. [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, V.C.; Dwivedi, Jishnu [Raja Ramanna Centre for Advanced Technology, Department of Atomic Energy, Government of India, Indore 452012 (India); Choudhary, R.J. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

2017-06-15

Highlights: • Tuning of Schottky barrier height has been achieved by electron beam irradiation at different doses on n-Si wafer prior to the fabrication of Schottky contact. • The XPS analyses have shown irradiation induced defects and the formation of several localized chemical states in Si/SiOx interface that influences the Schottky barrier height. • High ideality factor indicates metal-insulator-semiconductor configuration of the Schottky diode and the inhomogeneous nature of the Schottky barrier height. • The modifications in I–V characteristics have been observed as a function of electron dose. This is caused due to changes in the Schottky diode parameters and different transport mechanisms. - Abstract: The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (Φ{sub B}), ideality factor (n) and series resistance (R{sub s}). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of Φ{sub B} was observed as a function of EBI dose. The improved n with increased Φ{sub B} is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

OpenAIRE

Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.

2015-01-01

Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer graphene onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decr...

Methodology of Evaluation of the Impact of Picking Area Location on the Total Costs of Warehouse

Directory of Open Access Journals (Sweden)

Apsalons Raitis

2017-12-01

Full Text Available The picking system and the layout of the picking area are the key drivers for the evaluation of a warehouse picking cost. There are five variants for organizing the picking process of orders in a warehouse. The choice of a specific variant depends on the total cost of picking. The picking cost is evaluated within an uninterrupted picking process. It means that no stock out occurs in the time period of the picking process. The storing area and the picking area are created as two separate zones for picking quantities of the customer’s orders; the principle of division of orders is observed strictly. Referring to the locations of stock keeping units (SKU, two approaches of the layout of SKU in the picking area can be estimated. The first one is the single picking location for each single SKU, where replenishment is realized in the picking process. The second one - various picking locations for each single SKU, and the replenishment here is realized just only prior to a picking process or after it. The main benefits of the economy of the picking cost as far as these two approaches are concerned are the shortest picking route in the first case and one common replenishment option in the second case.

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

Science.gov (United States)

Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

2017-12-13

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

The assessment of skin picking in adolescence: psychometric properties of the Skin Picking Scale-Revised (German version).

Science.gov (United States)

Gallinat, Christina; Keuthen, Nancy J; Stefini, Annette; Backenstrass, Matthias

2017-02-01

Skin picking disorder has received growing attention since the release of DSM-5, yet there are no evidence-based assessment instruments for adolescent samples. The present study examines the psychometric properties of the Skin Picking Scale-Revised (SPS-R, German version) in adolescents. A total of 76 adolescents (96% female) completed the SPS-R, the Clinical Psychological Diagnostic System (KPD-38), and a questionnaire assessing demographics and clinical characteristics online. The SPS-R had high internal consistency (α = 0.89) and significant small-to-medium correlations with reduced competence skills, psychological impairment, general life satisfaction, social support, and social problems on the KPD-38. Similar to prior findings for adults, an exploratory factor analysis suggested a two-factor model for the SPS-R in adolescents. Group comparisons failed to show significant differences on SPS-R scores between participants with and without dermatological conditions. The current results suggest that the SPS-R can be useful in adolescent samples as a reliable and valid instrument for the assessment of skin picking severity. Future research investigating scale validity and factor structure in a clinical sample of adolescent skin pickers is warranted.

Determining stress fields of shearer-loader picks

Energy Technology Data Exchange (ETDEWEB)

Luszczkiewicz, J; Sikora, W

1987-06-01

Analyzes factors which influence stress distribution in the NK-4 shearer-loader picks during coal cutting. The AFT optically active cover, 0.0015 mm thick, was used. The pick with the AFT cover was loaded using a force of 33 kN. Isoclinic lines showing stress distribution were photographed. Effects of pick design and its holder type on stress distribution were investigated. Investigations showed that distribution of normal stresses in a pick shaft has a non-linear character. The hole in a pick shaft increased stress concentration in that shaft section. Eliminating the hole reduced stress concentration. Reducing shaft length by about 20 mm did not increase stresses in that shaft zone. 15 refs.

Automatic traveltime picking using instantaneous traveltime

KAUST Repository

Saragiotis, Christos; Alkhalifah, Tariq Ali; Fomel, Sergey

2013-01-01

Event picking is used in many steps of seismic processing. We present an automatic event picking method that is based on a new attribute of seismic signals, instantaneous traveltime. The calculation of the instantaneous traveltime consists of two separate but interrelated stages. First, a trace is mapped onto the time-frequency domain. Then the time-frequency representation is mapped back onto the time domain by an appropriate operation. The computed instantaneous traveltime equals the recording time at those instances at which there is a seismic event, a feature that is used to pick the events. We analyzed the concept of the instantaneous traveltime and demonstrated the application of our automatic picking method on dynamite and Vibroseis field data.

Automatic traveltime picking using instantaneous traveltime

KAUST Repository

Saragiotis, Christos

2013-02-08

Event picking is used in many steps of seismic processing. We present an automatic event picking method that is based on a new attribute of seismic signals, instantaneous traveltime. The calculation of the instantaneous traveltime consists of two separate but interrelated stages. First, a trace is mapped onto the time-frequency domain. Then the time-frequency representation is mapped back onto the time domain by an appropriate operation. The computed instantaneous traveltime equals the recording time at those instances at which there is a seismic event, a feature that is used to pick the events. We analyzed the concept of the instantaneous traveltime and demonstrated the application of our automatic picking method on dynamite and Vibroseis field data.

Performance enhancement of polymer Schottky diode by doping pentacene

International Nuclear Information System (INIS)

Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan

2009-01-01

Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation

Energy Technology Data Exchange (ETDEWEB)

Dawson, P; Feng, L; Penate-Quesada, L [Centre for Nanostructured Media, School of Maths and Physics, Queen' s University of Belfast, Belfast BT7 1NN (United Kingdom); Hill, G [EPSRC National Centre for III-V Technologies, Mappin Street, University ofSheffield, Sheffield S1 3JD (United Kingdom); Mitra, J, E-mail: P.dawson@qub.ac.uk

2011-03-30

Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of {approx}100 K) in the diode resistance-temperature (R{sub D}-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R{sub D}-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

INTERSTELLAR PICK-UP IONS OBSERVED BETWEEN 11 AND 22 AU BY NEW HORIZONS

International Nuclear Information System (INIS)

Randol, B. M.; McComas, D. J.; Schwadron, N. A.

2013-01-01

We report new observations by the Solar Wind Around Pluto instrument on the New Horizons spacecraft, which measures energy per charge (E/q) spectra of solar wind and interstellar pick-up ions (PUIs) between 11 AU and 22 AU from the Sun. The data provide an unprecedented look at PUIs as there have been very few measurements of PUIs beyond 10 AU. We analyzed the PUI part of the spectra by comparing them to the classic Vasyliunas and Siscoe PUI model. Our analysis indicates that PUIs are usually well-described by this distribution. We derive parameters relevant to PUI studies, such as the ionization rate normalized to 1 AU. Our result for the average ionization rate between 11 and 12 AU agrees with an independently derived average value found during the same time. Later, we find a general increase in the ionization rate, which is consistent with the increase in solar activity. We also calculate the PUI thermal pressure, which appears to be roughly consistent with previous results. Through fitting of the solar wind proton peaks in our spectra, we derive solar wind thermal pressures. Based on our analysis, we predict a ratio of PUI thermal pressure to solar wind thermal pressure just inside the termination shock to be between 100 and >1000.

Microwave Schottky diagnostic systems for the Fermilab Tevatron, Recycler, and CERN Large Hadron Collider

Directory of Open Access Journals (Sweden)

Ralph J. Pasquinelli

2011-07-01

Full Text Available A means for noninvasive measurement of transverse and longitudinal characteristics of bunched beams in synchrotrons has been developed based on high sensitivity slotted waveguide pickups. The pickups allow for bandwidths exceeding hundreds of MHz while maintaining good beam sensitivity characteristics. Wide bandwidth is essential to allow bunch-by-bunch measurements by means of a fast gate. The Schottky detector system is installed and successfully commissioned in the Fermilab Tevatron, Recycler and CERN LHC synchrotrons. Measurement capabilities include tune, chromaticity, and momentum spread of single or multiple beam bunches in any combination. With appropriate calibrations, emittance can also be measured by integrating the area under the incoherent tune sidebands.

Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode

International Nuclear Information System (INIS)

Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Petwal, V.C.

2016-01-01

In the high energy physics experiments, silicon based diodes are used to fabricate radiation detector to detect the charged particles. The Schottky barrier diodes have been studied extensively to understand the behavior of metal semiconductor interface, since such interfaces have been utilized as typical contacts in silicon devices. Because of surface states, interfacial layer, microscopic clusters of metal-semiconductor phases and other effects, it is difficult to fabricate junctions with barriers near the ideal values predicted from the work functions of the two isolated materials, therefore measured barrier heights are used in the device design. In this work, the Al/n-Si Schottky contacts are employed to study the diode parameters (Schottky barrier height and ideality factor), where the Schottky contacts were fabricated on electron beam irradiated silicon wafers. The interface behavior between electron irradiated Si wafer and post metal deposition is so far not reported. This method could be an alternative way to tailor the Schottky barrier height (SBH) without subjecting semiconductor sample to pre chemical and/or post heat treatments during fabrication

Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Directory of Open Access Journals (Sweden)

Bisewski Damian

2016-09-01

Full Text Available This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

The number of pickers and stock-keeping unit arrangement on a uni-directional picking line

Directory of Open Access Journals (Sweden)

Hagspihl, Robert

2014-10-01

Full Text Available The order picking process is often the single largest expense in a distribution centre (DC. The DC considered in this paper uses a picking line configuration to perform order picking. The number of pickers in a picking line, and the initial arrangement of stock-keeping units (SKUs, are two important factors that affect the total completion time of the picking lines. In this paper, the picking line configuration is simulated with an agent-based approach to describe the behaviour of an individual picker. The simulation is then used to analyse the effect of the number of pickers and the SKU arrangement. Verification and validation of this model shows that the model represents the real-world picking line to a satisfactory degree. Marginal analysis (MA was chosen to determine a ‘good’ number of pickers by means of the simulation model. A look-up table is presented to provide decision support for the choice of a ‘good’ number of pickers to improve completion times of the picking line, for the properties of a specific picking line. The initial SKU arrangement on a picking line is shown to be a factor that can affect the level of picker congestion and the total completion time. The greedy ranking and partitioning (GRP and organ pipe arrangement (OPA techniques from the literature, as well as the historical SKU arrangements used by the retailer under consideration, were compared with the proposed classroom discipline heuristic (CDH for SKU arrangement. It was found that the CDH provides an more even spread of SKUs that are picked most frequently, thus decreasing congestion and total completion time.

Gallium Nitride Schottky betavoltaic nuclear batteries

International Nuclear Information System (INIS)

Lu Min; Zhang Guoguang; Fu Kai; Yu Guohao; Su Dan; Hu Jifeng

2011-01-01

Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ( 63 Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm -2 . The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

Science.gov (United States)

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-04

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

International Nuclear Information System (INIS)

Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

1982-01-01

Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

Piezotronically modified double Schottky barriers in ZnO varistors.

Science.gov (United States)

Raidl, Nadine; Supancic, Peter; Danzer, Robert; Hofstätter, Michael

2015-03-25

Double Schottky barriers in ZnO are modified piezotronically by the application of mechanical stresses. New effects such as the enhancement of the potential barrier height and the increase or decrease of the natural barrier asymmetry are presented. Also, an extended model for the piezotronic modification of double Schottky barriers is given. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

Science.gov (United States)

Ha, Min-Woo; Lee, Seung-Chul; Choi, Young-Hwan; Kim, Soo-Seong; Yun, Chong-Man; Han, Min-Koo

2006-10-01

A new GaN Schottky barrier diode employing a trench structure, which is proposed and fabricated, successfully decreases a forward voltage drop without sacrificing any other electric characteristics. The trench is located in the middle of Schottky contact during a mesa etch. The Schottky metal of Pt/Mo/Ti/Au is e-gun evaporated on the 300 nm-deep trench as well as the surface of the proposed GaN Schottky barrier diode. The trench forms the vertical Au Schottky contact and lateral Pt Schottky contact due to the evaporation sequence of Schottky metal. The forward voltage drops of the proposed diode and conventional one are 0.73 V and 1.25 V respectively because the metal work function (5.15 eV) of the vertical Au Schottky contact is considerably less than that of the lateral Pt Schottky contact (5.65 eV). The proposed diode exhibits the low on-resistance of 1.58 mΩ cm 2 while the conventional one exhibits 8.20 mΩ cm 2 due to the decrease of a forward voltage drop.

Schottky effect model of electrical activity of metallic precipitates in silicon

International Nuclear Information System (INIS)

Plekhanov, P. S.; Tan, T. Y.

2000-01-01

A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate-Si system. Carrier diffusion and carrier drift in the Si space charge region are accounted for. Carrier recombination is attributed to the thermionic emission mechanism of charge transport across the Schottky junction rather than the surface recombination. It is shown that the precipitates can have a very large minority carrier capture cross-section. Under weak carrier generation conditions, the supply of minority carriers is found to be the limiting factor of the recombination process. The plausibility of the model is demonstrated by a comparison of calculated and available experimental results. (c) 2000 American Institute of Physics

TCAD analysis of graphene silicon Schottky junction solar cell

Science.gov (United States)

Kuang, Yawei; Liu, Yushen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Feng, Jinfu

2015-08-01

The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Science.gov (United States)

Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

2018-04-01

A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

Science.gov (United States)

Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Xin, Qian; Yan, Linlong; Luo, Yi [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

2015-03-16

In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

International Nuclear Information System (INIS)

Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

2015-01-01

In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate

Measurements of Effective Schottky Barrier in Inverse Extraordinary Optoconductance Structures

Science.gov (United States)

Tran, L. C.; Werner, F. M.; Solin, S. A.; Gilbertson, Adam; Cohen, L. F.

2013-03-01

Individually addressable optical sensors with dimensions as low as 250nm, fabricated from metal semiconductor hybrid structures (MSH) of AuTi-GaAs Schottky interfaces, display a transition from resistance decreasing with intensity in micron-scale sensors (Extraordinary Optoconductance, EOC) to resistance increasing with intensity in nano-scale sensors (Inverse Extraordinary Optoconductance I-EOC). I-EOC is attributed to a ballistic to diffusive crossover with the introduction of photo-induced carriers and gives rise to resistance changes of up to 9462% in 250nm devices. We characterize the photo-dependence of the effective Schottky barrier in EOC/I-EOC structures by the open circuit voltage and reverse bias resistance. Under illumination by a 5 mW, 632.8 nm HeNe laser, the barrier is negligible and the Ti-GaAs interface becomes Ohmic. Comparing the behavior of two devices, one with leads exposed, another with leads covered by an opaque epoxy, the variation in Voc with the position of the laser can be attributed to a photovoltaic effect of the lead metal and bulk GaAs. The resistance is unaffected by the photovoltaic offset of the leads, as indicated by the radial symmetry of 2-D resistance maps obtained by rastering a laser across EOC/IEOC devices. SAS has a financial interest in PixelEXX, a start-up company whose mission is to market imaging arrays.

Electrical characteristics of {sup 60}Co {gamma}-ray irradiated MIS Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)

2006-11-15

In order to interpret the effect of {sup 60}Co {gamma}-ray irradiation dose on the electrical characteristics of MIS Schottky diodes, they were stressed with a zero bias at 1 MHz in dark and room temperature during {gamma}-ray irradiation and the total dose range was 0-450 kGy. The effect of {gamma}-ray exposure on the electrical characteristics of MIS Schottky diodes has been investigated using C-V and G/{omega}-V measurements at room temperature. Experimental results show that {gamma}-ray irradiation induces a decrease in the barrier height {phi} {sub B} and series resistance R {sub s}, decreasing with increasing dose rate. Also, the acceptor concentration N {sub A} increases with increasing radiation dose. The C-V characteristics prove that there is a reaction for extra recombination centers in case of MIS Schottky diodes exposed to {gamma}-ray radiation. Furthermore, the density of interface states N {sub ss} by Hill-Coleman method increases with increasing radiation dose. Experimental results indicate that the interface-trap formation at high irradiation dose is reduced due to positive charge build-up in the Si/SiO{sub 2} interface (due to the trapping of holes) that reduces the flow rate of subsequent holes and protons from the bulk of the insulator to the Si/SiO{sub 2} interface.

Explanation of the barrier heights of graphene Schottky contacts by the MIGS-and-electronegativity concept

Science.gov (United States)

Mönch, Winfried

2016-09-01

Graphene-semiconductor contacts exhibit rectifying properties and, in this respect, they behave in exactly the same way as a "conventional" metal-semiconductor or Schottky contacts. It will be demonstrated that, as often assumed, the Schottky-Mott rule does not describe the reported barrier heights of graphene-semiconductor contacts. With "conventional" Schottky contacts, the same conclusion was reached already in 1940. The physical reason is that the Schottky-Mott rule considers no interaction between the metal and the semiconductor. The barrier heights of "conventional" Schottky contacts were explained by the continuum of metal-induced gap states (MIGSs), where the differences of the metal and semiconductor electronegativities describe the size and the sign of the intrinsic electric-dipoles at the interfaces. It is demonstrated that the MIGS-and-electronegativity concept unambiguously also explains the experimentally observed barrier heights of graphene Schottky contacts. This conclusion includes also the barrier heights reported for MoS2 Schottky contacts with "conventional" metals as well as with graphene.

Cumulative dose 60Co gamma irradiation effects on AlGaN/GaN Schottky diodes and its area dependence

Science.gov (United States)

Sharma, Chandan; Laishram, Robert; Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

2018-04-01

Cumulative dose gamma radiation effects on current-voltage characteristics of GaN Schottky diodes have been investigated. The different area diodes have been fabricated on AlGaN/GaN high electron mobility transistor (HEMT) epi-layer structure grown over SiC substrate and irradiated with a dose up to the order of 104 Gray (Gy). Post irradiation characterization shows a shift in the turn-on voltage and improvement in reverse leakage current. Other calculated parameters include Schottky barrier height, ideality factor and reverse saturation current. Schottky barrier height has been decreased whereas reverse saturation current shows an increase in the value post irradiation with improvement in the ideality factor. Transfer length measurement (TLM) characterization shows an improvement in the contact resistance. Finally, diodes with larger area have more variation in the calculated parameters due to the induced local heating effect.

Monte Carlo modelling of Schottky diode for rectenna simulation

Science.gov (United States)

Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

2017-09-01

Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

Science.gov (United States)

Brezeanu, G.; Pristavu, G.; Draghici, F.; Badila, M.; Pascu, R.

2017-08-01

In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high-temperature evaluation of SiC Schottky contacts, with discrete barrier height non-uniformity, is introduced in order to determine the temperature interval and bias domain where electrical behavior of the devices can be described by the thermionic emission theory (has a quasi-ideal performance). A minimal set of parameters, the effective barrier height and peff, the non-uniformity factor, is associated. Model-extracted parameters are discussed in comparison with literature-reported results based on existing inhomogeneity approaches, in terms of complexity and physical relevance. Special consideration was given to models based on a Gaussian distribution of barrier heights on the contact surface. The proposed methodology is validated by electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC), where a discrete barrier distribution can be considered. The same method is applied to inhomogeneous Pt/4H-SiC contacts. The forward characteristics measured at different temperatures are accurately reproduced using this inhomogeneous barrier model. A quasi-ideal behavior is identified for intervals spanning 200 °C for all measured Schottky samples, with Ni and Pt contact metals. A predictable exponential current-voltage variation over at least 2 orders of magnitude is also proven, with a stable barrier height and effective area for temperatures up to 400 °C. This application-oriented characterization technique is confirmed by using model parameters to fit a SiC-Schottky high temperature sensor's response.

Metal-semiconductor Schottky barrier junctions and their applications

CERN Document Server

1984-01-01

The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal­ semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the la...

Picking at waste facilities – scavenging or entrepreneurshipPicking at waste facilities – scavenging or entrepreneurship

CSIR Research Space (South Africa)

Oelofse, Suzanna HH

2010-10-01

Full Text Available Picking at landfills is a reality at most landfills in South Africa. It is often the poorest community members that resolve to picking as a way of making a living, typically under conditions that are not conducive to their health or safety. However...

Process for preparing schottky diode contacts with predetermined barrier heights

Science.gov (United States)

Chang, Y. Austin; Jan, Chia-Hong; Chen, Chia-Ping

1996-01-01

A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

Automatic Grasp Generation and Improvement for Industrial Bin-Picking

DEFF Research Database (Denmark)

Kraft, Dirk; Ellekilde, Lars-Peter; Rytz, Jimmy Alison

2014-01-01

and achieve comparable results and that our learning approach can improve system performance significantly. Automatic bin-picking is an important industrial process that can lead to significant savings and potentially keep production in countries with high labour cost rather than outsourcing it. The presented......This paper presents work on automatic grasp generation and grasp learning for reducing the manual setup time and increase grasp success rates within bin-picking applications. We propose an approach that is able to generate good grasps automatically using a dynamic grasp simulator, a newly developed...

Schottky contacts to polar and nonpolar n-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

2012-01-15

Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

Science.gov (United States)

Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

2018-03-01

It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Electrical transport measurements and degradation of graphene/n-Si Schottky junction diodes

International Nuclear Information System (INIS)

Park, No-Won; Lee, Won-Yong; Lee, Sang-Kwon; Koh, Jung-Hyuk; Kim, Dong-Joo; Kim, Gil-Sung; Hyung, Jung-Hwan; Hong, Chang-Hee; Kim, Keun-Soo

2015-01-01

We report on the electrical properties, such as the ideality factors and Schottky barrier heights, that were obtained by using current density - voltage (J - V ) and capacitance - voltage (C - V ) characteristics. To fabricate circularly- and locally-contacted Au/Gr/n-Si Schottky diode, we deposited graphene through the chemical vapor deposition (CVD) growth technique, and we employed reactive ion etching to reduce the leakage current of the Schottky diodes. The average values of the barrier heights and the ideality factors from the J .V characteristics were determined to be ∼0.79 ± 0.01 eV and ∼1.80 ± 0.01, respectively. The Schottky barrier height and the doping concentration from the C - V measurements were ∼0.85 eV and ∼1.76 x 10 15 cm -3 , respectively. From the J - V characteristics, we obtained a relatively low reverse leakage current of ∼2.56 x 10 -6 mA/cm -2 at -2 V, which implies a well-defined rectifying behavior. Finally, we found that the Gr/n-Si Schottky diodes that were exposed to ambient conditions for 7 days exhibited a ∼3.2-fold higher sheet resistance compared with the as-fabricated Gr/n-Si diodes, implying a considerable electrical degradation of the Gr/n-Si Schottky diodes.

Design of a PC Based Pressure Indicator Using Inductive Pick-up Type Transducer and Bourdon Tube Sensor

Directory of Open Access Journals (Sweden)

S. C. BERA

2009-08-01

Full Text Available Bourdon tube is a mechanical type pressure sensor and the bourdon gauge measures gauge pressure of a process pipe line or a process tank. But it is a local indicator and special costlier techniques are required to transmit the reading of bourdon gauge to a remote distance. In the present paper, a very simple inductive pick-up type technique has been developed to transmit the reading of bourdon gauge to a remote distance in the form of 1-5 Volt D.C. signal. This signal has been optically isolated to design a PC based pressure indicator using Labtech Note Book Pro software. The theoretical analysis of the whole technique has been presented in the paper. The instrument developed using this technique has been experimentally tested and the experimental results are reported in the paper. A good linearity and repeatability of the instrument has been observed.

A modeling of dynamic storage assignment for order picking in beverage warehousing with Drive-in Rack system

Science.gov (United States)

Hadi, M. Z.; Djatna, T.; Sugiarto

2018-04-01

This paper develops a dynamic storage assignment model to solve storage assignment problem (SAP) for beverages order picking in a drive-in rack warehousing system to determine the appropriate storage location and space for each beverage products dynamically so that the performance of the system can be improved. This study constructs a graph model to represent drive-in rack storage position then combine association rules mining, class-based storage policies and an arrangement rule algorithm to determine an appropriate storage location and arrangement of the product according to dynamic orders from customers. The performance of the proposed model is measured as rule adjacency accuracy, travel distance (for picking process) and probability a product become expiry using Last Come First Serve (LCFS) queue approach. Finally, the proposed model is implemented through computer simulation and compare the performance for different storage assignment methods as well. The result indicates that the proposed model outperforms other storage assignment methods.

Graphite based Schottky diodes formed semiconducting substrates

Science.gov (United States)

Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

2010-03-01

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

White matter abnormalities in skin picking disorder

DEFF Research Database (Denmark)

Grant, Jon E; Odlaug, Brian Lawrence; Hampshire, Adam

2013-01-01

Skin picking disorder (SPD) is characterized by the repetitive and compulsive picking of skin, resulting in tissue damage. Neurocognitive findings in SPD implicate difficulty with response inhibition (suppression of pre-potent motor responses). This function is dependent on the integrity of the r......Skin picking disorder (SPD) is characterized by the repetitive and compulsive picking of skin, resulting in tissue damage. Neurocognitive findings in SPD implicate difficulty with response inhibition (suppression of pre-potent motor responses). This function is dependent on the integrity...... remarkably similar to those previously reported in trichotillomania. This study adds considerable support to the notion that-in addition to the phenomenological and comorbid overlap between SPD and trichotillomania-these disorders likely share overlapping neurobiology....

Wavefront picking for 3D tomography and full-waveform inversion

KAUST Repository

AlTheyab, Abdullah

2016-09-08

We have developed an efficient approach for picking firstbreak wavefronts on coarsely sampled time slices of 3D shot gathers. Our objective was to compute a smooth initial velocity model for multiscale full-waveform inversion (FWI). Using interactive software, first-break wavefronts were geometrically modeled on time slices with a minimal number of picks. We picked sparse time slices, performed traveltime tomography, and then compared the predicted traveltimes with the data in-between the picked slices. The picking interval was refined with iterations until the errors in traveltime predictions fell within the limits necessary to avoid cycle skipping in early arrivals FWI. This approach was applied to a 3D ocean-bottom-station data set. Our results indicate that wavefront picking has 28% fewer data slices to pick compared with picking traveltimes in shot gathers. In addition, by using sparse time samples for picking, data storage is reduced by 88%, and therefore allows for a faster visualization and quality control of the picks. Our final traveltime tomogram is sufficient as a starting model for early arrival FWI. © 2016 Society of Exploration Geophysicists.

Schottky Barriers in Bilayer Phosphorene Transistors.

Science.gov (United States)

Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

2017-04-12

It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

The properties of transparent TiO2 films for Schottky photodetector

Directory of Open Access Journals (Sweden)

Sung-Ho Park

2017-08-01

Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions

Science.gov (United States)

Tomer, Dushyant; Rajput, Shivani; Li, Lian

Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. In this study, graphene Schottky junctions are fabricated by transferring CVD monolayer graphene on mechanically exfoliated MoS2 multilayers. The forward bias current-voltage characteristics are measured in the temperature range of 210-300 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature. Such behavior is attributed to Schottky barrier inhomogeneities possibly due to graphene ripples and ridges at the junction interface as suggested by atomic force microscopy. Assuming a Gaussian distribution of the barrier height, mean barrier of 0.97+/-0.10 eV is found for the graphene MoS2 junction. Our findings provide significant insight on the barrier height inhomogeneities in graphene/two dimensional semiconductor Schottky junctions. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award No. DEFG02-07ER46228.

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

Science.gov (United States)

Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

2015-05-29

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

International Nuclear Information System (INIS)

Tomer, D; Rajput, S; Hudy, L J; Li, L; Li, C H

2015-01-01

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current–voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions. (paper)

Summer Student Report 2014: Schottky component qualification and RF filter characterization

CERN Document Server

Egidos Plaja, Nuria

2014-01-01

This Summer Student project has been developed in BE-BI-QP department under the supervision of Manfred Wendt. Main goals of the task to be performed are the following: 1)\tFilter characterization: the student will get familiar with the Vector Network Analizer (VNA), S-parameter measurement and PSPICE modelling of low-pass filters. 2)\tFilter response matching: an algorithm to compare and classify filter responses into best-matching pairs will be developed. 3)\tSchottky monitor filter qualification: S-parameter and time domain measurements will be carried out with filters related to Schottky monitor and results will be benchmarked. 4)\tSchottky monitor amplifier measurement: noise figure and gain at a given frequency will be measured for a set of Low Noise Amplifiers related to Schottky monitor. -1dB compression point and 3rd order interception point will be measured too for education purposes. For the development of this project, the student will get familiar with RF measure devices (VNA, VSA), theoretical concep...

Niemann-Pick disease type C

OpenAIRE

Vanier, Marie T

2010-01-01

Abstract Niemann-Pick C disease (NP-C) is a neurovisceral atypical lysosomal lipid storage disorder with an estimated minimal incidence of 1/120 000 live births. The broad clinical spectrum ranges from a neonatal rapidly fatal disorder to an adult-onset chronic neurodegenerative disease. The neurological involvement defines the disease severity in most patients but is typically preceded by systemic signs (cholestatic jaundice in the neonatal period or isolated spleno- or hepatosplenomegaly in...

Tuning the Schottky contacts in the phosphorene and graphene heterostructure by applying strain.

Science.gov (United States)

Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Lin-Zhi; Caii, Meng-Qiu

2016-07-20

The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure can be tuned from p-type to n-type by the in-plane compressive strains from -2% to -4%. After analyzing the total band structure and density of states of P atom orbitals, we find that the Schottky barrier height (SBH) is determined by the P-pz orbitals. What is more, the variation of the work function of the phosphorene monolayer and the graphene electrode and the Fermi level shift are the nature of the transition of Schottky barrier from n-type Schottky contact to p-type Schottky contact in the phosphorene and graphene heterostructure under different in-plane strains. We speculate that these are general results of tuning of the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure by controlling the in-plane compressive strains to obtain a promising method to design and fabricate a phosphorene-graphene based field effect transistor.

Skin picking disorder in university students

DEFF Research Database (Denmark)

Odlaug, Brian Lawrence; Lust, Katherine; Schreiber, Liana R N

2013-01-01

This study sought to examine the prevalence of skin picking disorder (SPD) in a university sample and assess associated physical and mental health correlates.......This study sought to examine the prevalence of skin picking disorder (SPD) in a university sample and assess associated physical and mental health correlates....

Gamma-Ray Irradiation Effects on the Characteristics of New Material P Type 6H-SiC Ni-Schottky Diodes (Application For Nuclear Fuel Facilities)

International Nuclear Information System (INIS)

U-Sudjadi; T-Ohshima, N. Iwamoto; S-Hishiki; N-Iwamoto, K. Kawano

2007-01-01

Effects of gamma-ray irradiation on electrical characteristics of new material p type 6H-SiC Ni-Schottky diodes were investigated. Ni Schottky diodes fabricated on p type 6H-SiC epi-layer were irradiated with gamma-rays at RT. The electrical characteristics of the diodes were evaluated before and after irradiation. The value of the on-resistance does not change up to 1 MGy, and the value increases with increasing absorbed dose above 1 MGy. For n factor, no significant increase is observed below 500 kGy, however, the value increases above 500 kGy. Schottky Barrier Height (SBH) decreases with increasing absorbed dose. Leakage current tends to increase due to irradiation. (author)

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

International Nuclear Information System (INIS)

Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

2010-01-01

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

Science.gov (United States)

Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta;

The nature of electrical interaction of Schottky contacts

International Nuclear Information System (INIS)

Torkhov, N. A.

2011-01-01

Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances ( i,j ), concentration of doping impurities in the semiconductor N D , and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height φ b ). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the “dead” zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the “dead” zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.

PICK1 deficiency impairs secretory vesicle biogenesis and leads to growth retardation and decreased glucose tolerance.

Directory of Open Access Journals (Sweden)

Birgitte Holst

Full Text Available Secretory vesicles in endocrine cells store hormones such as growth hormone (GH and insulin before their release into the bloodstream. The molecular mechanisms governing budding of immature secretory vesicles from the trans-Golgi network (TGN and their subsequent maturation remain unclear. Here, we identify the lipid binding BAR (Bin/amphiphysin/Rvs domain protein PICK1 (protein interacting with C kinase 1 as a key component early in the biogenesis of secretory vesicles in GH-producing cells. Both PICK1-deficient Drosophila and mice displayed somatic growth retardation. Growth retardation was rescued in flies by reintroducing PICK1 in neurosecretory cells producing somatotropic peptides. PICK1-deficient mice were characterized by decreased body weight and length, increased fat accumulation, impaired GH secretion, and decreased storage of GH in the pituitary. Decreased GH storage was supported by electron microscopy showing prominent reduction in secretory vesicle number. Evidence was also obtained for impaired insulin secretion associated with decreased glucose tolerance. PICK1 localized in cells to immature secretory vesicles, and the PICK1 BAR domain was shown by live imaging to associate with vesicles budding from the TGN and to possess membrane-sculpting properties in vitro. In mouse pituitary, PICK1 co-localized with the BAR domain protein ICA69, and PICK1 deficiency abolished ICA69 protein expression. In the Drosophila brain, PICK1 and ICA69 co-immunoprecipitated and showed mutually dependent expression. Finally, both in a Drosophila model of type 2 diabetes and in high-fat-diet-induced obese mice, we observed up-regulation of PICK1 mRNA expression. Our findings suggest that PICK1, together with ICA69, is critical during budding of immature secretory vesicles from the TGN and thus for vesicular storage of GH and possibly other hormones. The data link two BAR domain proteins to membrane remodeling processes in the secretory pathway of

High performance Schottky diodes based on indium-gallium-zinc-oxide

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

2016-07-15

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

Pentacene-based photodiode with Schottky junction

International Nuclear Information System (INIS)

Lee, Jiyoul; Hwang, D.K.; Park, C.H.; Kim, S.S.; Im, Seongil

2004-01-01

We have fabricated a metal/organic semiconductor Schottky photodiode based on Al/pentacene junction. Since the energy band gap of thin solid pentacene was determined to be 1.82 eV, as characterized by direct absorption spectroscopy, we measured spectral photoresponses on our Schottky photodiode in the monochromatic light illumination range of 325-650 nm applying a reverse bias of -2 V. The main features of photo-response spectra were found to shift from those of direct absorption spectra toward higher photon energies. It is because the direct absorption spectra mainly show exciton level peaks rather than the true highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps while the photo-response spectra clearly represents the true HOMO-LUMO gap. Our photo-response spectra reveal 1.97 eV as the HOMO-LUMO gap

Silver nanowires-templated metal oxide for broadband Schottky photodetector

Energy Technology Data Exchange (ETDEWEB)

Patel, Malkeshkumar; Kim, Hong-Sik; Kim, Joondong, E-mail: joonkim@inu.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772 (Korea, Republic of); Park, Hyeong-Ho [Applied Device and Material Lab., Device Technology Division, Korea Advanced Nano Fab Center (KANC), Suwon 443270 (Korea, Republic of)

2016-04-04

Silver nanowires (AgNWs)-templated transparent metal oxide layer was applied for Si Schottky junction device, which remarked the record fastest photoresponse of 3.4 μs. Self-operating AgNWs-templated Schottky photodetector showed broad wavelength photodetection with high responsivity (42.4 A W{sup −1}) and detectivity (2.75 × 10{sup 15} Jones). AgNWs-templated indium-tin-oxide (ITO) showed band-to-band excitation due to the internal photoemission, resulting in significant carrier collection performances. Functional metal oxide layer was formed by AgNWs-templated from ITO structure. The grown ITO above AgNWs has a cylindrical shape and acts as a thermal protector of AgNWs for high temperature environment without any deformation. We developed thermal stable AgNWs-templated transparent oxide devices and demonstrated the working mechanism of AgNWs-templated Schottky devices. We may propose the high potential of hybrid transparent layer design for various photoelectric applications, including solar cells.

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

Investigation of significantly high barrier height in Cu/GaN Schottky diode

Directory of Open Access Journals (Sweden)

Manjari Garg

2016-01-01

Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

International Nuclear Information System (INIS)

Chand, Subhash; Bala, Saroj

2007-01-01

The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

A Digital System for Longitudinal Emittance Blow-Up in the LHC

CERN Document Server

JaussI, M; Baudrenghien, P; Butterworth, A; Sanchez-Quesada, J; Shaposhnikova, E; Tuckmantel, J

2011-01-01

In order to preserve beam stability with nominal bunch intensity in the LHC, longitudinal emittance blow-up is performed during the energy ramp by injecting phase noise in the main accelerating cavities. The noise spectrum spans a small frequency band around the synchrotron frequency. It is generated continuously in software and streamed digitally into the Digital Signal Processor (DSP) of the Beam Control system where it is added to the pick-up signal of the beam phase loop, resulting in a phase modulation of the accelerating RF. In order to achieve reproducible results, a feedback system, using as input the measured bunch lengths averaged over each ring, controls the strength of the excitation, allowing the operator to simply set a target bunch length. The spectrum of the noise is adjusted to excite the core of the bunch only, extending to the desired bunch length. As it must follow the evolution of the synchrotron frequency through the ramp, it is automatically calculated by the LHC settings management sof...

Modernisation picks up in commodities exchange market%中国商品交易市场现代化步伐提速

Institute of Scientific and Technical Information of China (English)

无

2005-01-01

@@ With changes in the market circulation environment and the end of a theree-year protection after its accession to the World Trade Organisation, China's commodities trade aggregate has been growing steadily and the size of individual markets has been increasing gradually.In 2004, the number of commodity markets with annual turnover exceeding RMB 100 million jumped to 3,365,100 more than in the previous year; their turnover, at RMB2.61027 trillion, surged. 21.3%. The pace of modernisation of the country's commodity markets has picked up, with their business operations becoming more international, more information-based, larger in scale and functioning as groups.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Chakrabarti, P., E-mail: pchakrabarti.ece@iitbhu.ac.in [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

2016-08-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

International Nuclear Information System (INIS)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta; Chakrabarti, P.

2016-01-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

International Nuclear Information System (INIS)

Yüksel, Ö.F.; Tuğluoğlu, N.; Gülveren, B.; Şafak, H.; Kuş, M.

2013-01-01

Graphical abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. An emphasis is placed on how electrical and interface characteristics like current–voltage (I–V) variation, ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of Au/PMI/p-Si diode structure change with the temperatures between 100 and 300 K. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. -- Highlights: •An Au/perylene-monoimide (PMI)/p-Si Schottky diode having an organic interlayer has been fabricated. •I–V characteristics have been investigated over a wide temperature range 100–300 K. •C–V measurements have been analyzed at room temperature. -- Abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current–voltage characteristics (I–V), ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of diode change with temperature over a wide range of 100–300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation–recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung–Cheung method is also employed to analysis the current–voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier

Performance of diamond and point attack coal cutter picks

Energy Technology Data Exchange (ETDEWEB)

Liu, Y. [CSIRO, Brisbane, Qld. (Australia). Division of Exploration and Mining

1996-12-31

This paper presents results of laboratory experiments and field trials of PDC (Polycrystalline Diamond Compact) and PA (Point Attack) coal cutter picks. Laboratory cutting tests included linear rock and coal cutting and turning rock cutting. The following parameters were measured to assess performance of PDC and PA cutter picks: cutting force, normal force, specific energy consumption, yield, dust generation and ignitional characteristics (temperature rise). Field trials were conducted on a longwall shearer. Performance of both types of pick interims of pick life and dust generation were assessed. 3 refs., 18 figs., 3 tabs.

Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

International Nuclear Information System (INIS)

San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

2013-01-01

The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

A multi-objective approach to the assignment of stock keeping units to unidirectional picking lines

Directory of Open Access Journals (Sweden)

Le Roux, G. J.

2017-05-01

Full Text Available An order picking system in a distribution centre consisting of parallel unidirectional picking lines is considered. The objectives are to minimise the walking distance of the pickers, the largest volume of stock on a picking line over all picking lines, the number of small packages, and the total penalty incurred for late distributions. The problem is formulated as a multi-objective multiple knapsack problem that is not solvable in a realistic time. Population-based algorithms, including the artificial bee colony algorithm and the genetic algorithm, are also implemented. The results obtained from all algorithms indicate a substantial improvement on all objectives relative to historical assignments. The genetic algorithm delivers the best performance.

Successful observation of Schottky signals at the Tevatron collider

International Nuclear Information System (INIS)

Goldberg, D.A.; Lambertson, G.R.

1989-08-01

We have constructed a Schottky detector for the Tevatron collider in the form of a high-Q (∼5000) cavity which operates at roughly 2 GHz, well above the frequency at which the Tevatron's single-bunch frequency spectrum begins to roll off. Initial spectra obtained from the detector show clearly observable Schottky betatron lines, free of coherent contaminants; also seen are the ''common-mode'' longitudinal signals due to the offset of the beam from the detector center. The latter signals indicate that at 2 GHz, the coherent single-bunch spectrum from the detector is reduced by >80 dB; therefore, in normal collider operation, the Schottky betatron lines are >40 dB greater than their coherent counterparts. We describe how the data we have obtained give information on transverse and longitudinal emittances, synchrotron frequency, and betatron tunes, as well as reveal what may be previously unobserved phenomena. Space limitations restrict us to presenting only as much data as should be necessary to convince even the skeptical reader of the validity of the claim made in the paper's title. 3 refs., 2 figs

Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

Science.gov (United States)

Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

2018-04-01

In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

Science.gov (United States)

Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

2013-01-30

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

Experimental investigation of highly excited states of the 5,6He and 5,6Li nuclei in the (6Li, 7Be) and (6Li, 7Li) one-nucleon-pick-up reactions

International Nuclear Information System (INIS)

Sakuta, S.B.; Novatskij, B.G.; Stepanov, D.N.; Aleksandrov, D.V.; Glukhov, Yu.A.; Nikol'skij, E.Yu.

2002-01-01

( 6 Li, 7 Be) and ( 6 Li, 7 Li) reactions on the 6 Li, 7 Li nuclei have been investigated in the angular range of 0-20 deg in laboratory system at the 93-MeV 6 Li energy. Besides low-lying states of 5,6 He and 5,6 Li nuclei, broad structures have been observed in the measured spectra close to the t( 3 He) + d and t( 3 He) + t threshold at excitation energies of 16.75 (3/2 + ) and ∼ 20 MeV ( 5 He), 16.66 (3/2 + ) and ∼ 20 MeV ( 5 Li), 14.0 and 25 MeV ( 6 He), and ∼ 20 MeV ( 6 Li). Angular distributions, which have been measured for transitions to the ground (0 + ) and exited states at E x =1.8 MeV (2 + ) and 14.0 MeV of the 6 He nucleus in the 7 Li( 6 Li, 7 Be) 6 He reaction, have been analyzed in the framework of the finite-range distorted-waves method assuming the 1p- and 1s-proton pick-up mechanism. It has been shown that ( 6 Li, 7 Be) and ( 6 Li, 7 Li) reactions predominately proceed by one-step pick-up mechanism and broad structures which are observed at high excitation energies should be considered as quasimolecular states of the t( 3 He) + d and t( 3 He) + t type [ru

ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

Science.gov (United States)

Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

2016-04-01

Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

Fluctuations in Schottky barrier heights

International Nuclear Information System (INIS)

Mahan, G.D.

1984-01-01

A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity

Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

International Nuclear Information System (INIS)

Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

2009-01-01

In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

Influence of interface inhomogeneities in thin-film Schottky diodes

Science.gov (United States)

Wilson, Joshua; Zhang, Jiawei; Li, Yunpeng; Wang, Yiming; Xin, Qian; Song, Aimin

2017-11-01

The scalability of thin-film transistors has been well documented, but there have been very few investigations into the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150, and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness caused a dramatic deterioration of the current-voltage characteristics, most notably increasing the reverse current by nearly five orders of magnitude. Furthermore, the forward characteristics display an increase in the ideality factor and a reduction in the barrier height. The origins of this phenomenon have been elucidated using device simulations. First, when the semiconductor layer is fully depleted, the electric field increases with the reducing thickness, leading to an increased diffusion current. However, the effects of diffusion only offer a small contribution to the huge variations in reverse current seen in the experiments. To fully explain this effect, the role of inhomogeneities in the Schottky barrier height has been considered. Contributions from lower barrier regions (LBRs) are found to dominate the reverse current. The conduction band minimum below these LBRs is strongly dependent upon thickness and bias, leading to reverse current variations as large as several orders of magnitude. Finally, it is demonstrated that the thickness dependence of the reverse current is exacerbated as the magnitude of the inhomogeneities is increased and alleviated in the limit where the LBRs are large enough not to be influenced by the adjacent higher barrier regions.

PICK1 interacts with ABP/GRIP to regulate AMPA receptor trafficking.

Science.gov (United States)

Lu, Wei; Ziff, Edward B

2005-08-04

PICK1 and ABP/GRIP bind to the AMPA receptor (AMPAR) GluR2 subunit C terminus. Transfer of the receptor from ABP/GRIP to PICK1, facilitated by GluR2 S880 phosphorylation, may initiate receptor trafficking. Here we report protein interactions that regulate these steps. The PICK1 BAR domain interacts intermolecularly with the ABP/GRIP linker II region and intramolecularly with the PICK1 PDZ domain. Binding of PKCalpha or GluR2 to the PICK1 PDZ domain disrupts the intramolecular interaction and facilitates the PICK1 BAR domain association with ABP/GRIP. Interference with the PICK1-ABP/GRIP interaction impairs S880 phosphorylation of GluR2 by PKC and decreases the constitutive surface expression of GluR2, the NMDA-induced endocytosis of GluR2, and recycling of internalized GluR2. We suggest that the PICK1 interaction with ABP/GRIP is a critical step in controlling GluR2 trafficking.

Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

International Nuclear Information System (INIS)

Pardo, D; Grajal, J

2015-01-01

This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology. (paper)

Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

Energy Technology Data Exchange (ETDEWEB)

Kasper, M. [Christian Doppler Laboratory for Nanoscale Methods in Biophysics, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Gramse, G. [Biophysics Institute, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Hoffmann, J. [METAS, National Metrology Institute of Switzerland, Lindenweg 50, 3003 Bern-Wabern (Switzerland); Gaquiere, C. [MC2 technologies, 5 rue du Colibri, 59650 Villeneuve D' ascq (France); Feger, R.; Stelzer, A. [Institute for Communications Engineering and RF-Systems, Johannes Kepler University, Altenberger Str. 69, 4040 Linz (Austria); Smoliner, J. [Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna (Austria); Kienberger, F., E-mail: ferry-kienberger@keysight.com [Keysight Technologies Austria, Measurement Research Lab, Gruberstrasse 40, 4020 Linz (Austria)

2014-11-14

We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

Schottky contact analysis of photovoltaic chalcopyrite thin film absorbers

International Nuclear Information System (INIS)

Schlenker, E.; Mertens, V.; Parisi, J.; Reineke-Koch, R.; Koentges, M.

2007-01-01

Current-voltage and capacitance-voltage measurements serve to analyze thermally evaporated Al Schottky contacts on Cu(In, Ga)Se 2 based photovoltaic thin film devices, either taken as grown or etched in a bromine-methanol solution. The characteristics of the Schottky contacts on the as-grown films give evidence for some dielectric layer developing between the metal and the semiconductor. Etching the semiconductor surface prior to evaporation of the Al front contact yields a pure metal-semiconductor behavior, including effects that can be attributed to an additional diode at the Mo contact. Simulations confirm the experimental results

Transverse Feedback for Electron-Cooled DC-Beam at COSY

International Nuclear Information System (INIS)

Kamerdzhiev, V.; Dietrich, J.

2004-01-01

At the cooler synchrotron COSY, high beam quality is achieved by means of beam cooling. In the case of intense electron-cooled beams, fast particle losses due to transverse coherent beam oscillations are regularly observed. To damp the instabilities a transverse feedback system was installed and successfully commissioned. Commissioning of the feedback system resulted in a significant increase of the e-cooled beam intensity by single injection and when cooling and stacking of repeated injections is applied. External experiments profit from the small diameter beams and the reduced halo. A transverse damping system utilizing a pick-up, signal processing electronics, power amplifiers, and a stripline deflector is introduced. Beam current and Schottky spectra measurements with the vertical feedback system turned on and off are presented

Research on the electrical characteristics of the Pt/CdS Schottky diode

Science.gov (United States)

Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

2013-08-01

With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

63Ni schottky barrier nuclear battery of 4H-SiC

International Nuclear Information System (INIS)

Xiao-Ying Li; Yong Ren; Xue-Jiao Chen; Da-Yong Qiao; Wei-Zheng Yuan

2011-01-01

The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm 2 to collect the charge from a 4 mCi/cm 2 63 Ni source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed. A prototype of this battery was fabricated and tested under the illumination of the 63 Ni source with an activity of 0.12 mCi. An open circuit voltage (V OC ) of 0.27 V and a short circuit current density (J SC ) of 25.57 nA/cm 2 are measured. The maximum output power density (P max ) of 4.08 nW/cm 2 and power conversion efficiency (η) of 1.01% is obtained. The performance of this battery is expected to be significantly improved by using larger activity and optimizing the design and processing technology of the battery. By achieving comparable performance with previously constructed p-n or p-i-n junction energy conversion structures, the Schottky barrier diode proves to be a feasible approach to achieve practical betavoltaics. (author)

Utilizing Schottky barriers to suppress short-channel effects in organic transistors

Science.gov (United States)

Fernández, Anton F.; Zojer, Karin

2017-10-01

Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest height necessary to exactly compensate for the premature turn on. This approach offers a substantial enhancement of the ON-OFF ratio. We show that this roots in the fact that such optimal barrier heights offer an excellent compromise between an OFF current diminished by orders of magnitude and an only slightly reduced ON current.

The relationship of psychological trauma with trichotillomania and skin picking.

Science.gov (United States)

Özten, Eylem; Sayar, Gökben Hızlı; Eryılmaz, Gül; Kağan, Gaye; Işık, Sibel; Karamustafalıoğlu, Oğuz

2015-01-01

Interactions between psychological, biological and environmental factors are important in development of trichotillomania and skin picking. The aim of this study is to determine the relationship of traumatic life events, symptoms of post-traumatic stress disorder and dissociation in patients with diagnoses of trichotillomania and skin picking disorder. The study included patients who was diagnosed with trichotillomania (n=23) or skin picking disorder (n=44), and healthy controls (n=37). Beck Depression Inventory, Traumatic Stress Symptoms Scale and Dissociative Experiences Scale were administered. All groups checked a list of traumatic life events to determine the exposed traumatic events. There was no statistical significance between three groups in terms of Dissociative Experiences Scale scores (P=0.07). But Beck Depression Inventory and Traumatic Stress Symptoms Scale scores of trichotillomania and skin picking groups were significantly higher than the control group. Subjects with a diagnosis of trichotillomania and skin picking reported statistically significantly higher numbers of traumatic and negative events in childhood compared to healthy subjects. We can conclude that trauma may play a role in development of both trichotillomania and skin picking. Increased duration of trichotillomania or skin picking was correlated with decreased presence of post-traumatic stress symptoms. The reason for the negatively correlation of severity of post-traumatic stress symptoms and self-harming behavior may be speculated as developing trichotillomania or skin picking symptoms helps the patient to cope with intrusive thoughts related to trauma. Future longitudinal research must focus on whether trauma and post-traumatic stress or trichotillomania and skin picking precede the development of mental disorder.

Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

KAUST Repository

Shaikh, Parvez Abdul Ajij; Shi, Dong; Duran Retamal, Jose Ramon; Sheikh, Arif D.; Haque, Mohammed; Kang, Chen-Fang; He, Jr-Hau; Bakr, Osman; Wu, Tao

2016-01-01

Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single

Nanorobotic Manipulation Setup for Pick-and-Place Handling and non-destructive Characterization of Carbon Nanotubes

DEFF Research Database (Denmark)

Eicchorn, V.; Carlson, Kenneth; Andersen, Karin Nordström

2007-01-01

. The pick-and-place task is carried out by using an electrothermal actuated microgripper, designed for controlled manipulation of nanotubes. The nanotube is picked up from an array of multiwalled carbon nanotubes (MWCNTs) and transferred to the tip of an atomic force microscope (AFM) probe in order...... to assemble a high-aspect ratio AFM supertip. Another application of the nanorobotic setup considered in this paper is the nondestructive mechanical characterization of CNTs. A piezoresistive AFM probe is used to bend MWCNTs, while the bending force is measured, in order to estimate the Young's modulus...

Walter Schottky. Atom-theorist and electrotechnician. His life and work until the year 1941; Walter Schottky. Atomtheoretiker und Elektrotechniker. Sein Leben und Werk bis ins Jahr 1941

Energy Technology Data Exchange (ETDEWEB)

Serchinger, Reinhard W.

2008-07-01

In this first scientific biography of Walter Schottky at the one hand the origin of his scientific and technical works is reproduced and put in the physical-historical connection of his time. At the other hand his special role in the research strategy of the Siemens company becomes clear, which could in the framework of this research project for the first time be identified. Also psychological aspects were essentially included in the study, because else the binding of the particular more corresponding to an ivory-tower than and industrial physicist personality of Schottky to the Siemens trust not would be understandable. The example of Walter Schottky shows the importance of the researching individuum, which until today undoubtly can be an important element of company-internal innovation processes not only contrarily but also in the transition to scientific team work.

Design and Control of Warehouse Order Picking: a literature review

NARCIS (Netherlands)

M.B.M. de Koster (René); T. Le-Duc (Tho); K.J. Roodbergen (Kees-Jan)

2006-01-01

textabstractOrder picking has long been identified as the most labour-intensive and costly activity for almost every warehouse; the cost of order picking is estimated to be as much as 55% of the total warehouse operating expense. Any underperformance in order picking can lead to unsatisfactory

Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers

International Nuclear Information System (INIS)

Fetterman, H.R.; Tannenwald, P.E.; Clifton, B.J.; Parker, C.D.; Fitzgerald, W.D.; Erickson, N.R.

1978-01-01

We have made heterodyne radiometric measurements with GaAs Schottky diode mixers, mounted in a corner-reflector configuration, over the spectral range 170 μm to 1 mm. At 400 μm, system noise temperatures of 9700 K DSB (NEP=1.4 x 10 - 19 W/Hz) and mixer noise temperatures of 5900 K have been achieved. This same quasioptical mixer has also been used to generate 10 - 7 W of tunable radiation suitable for spectroscopic applications

Thermal stability of TaN Schottky contacts on n-GaN

Energy Technology Data Exchange (ETDEWEB)

Hayes, J.R.; Kim, D-W.; Meidia, H.; Mahajan, S

2003-02-07

The thermal stability and electrical characteristics of tantalum-nitrogen alloy Schottky contacts on n-GaN were investigated. Non-stoichiometric {delta}-phase (40 atomic percent nitrogen) tantalum nitride contacts exhibited good electrical properties up to an annealing temperature of 600 deg. C. However, they degrade rapidly above this temperature due to outward diffusion of Ga and presumably nitrogen into the {delta}-phase tantalum nitride. It is surmised that excess Ta reacts with N at the GaN surface, freeing Ga which then diffuses into the TaN layer. Stoichiometric TaN Schottky contacts were stable at temperatures as high as 800 deg. C and had far superior electrical performance. This stems from the thermodynamic stability of the stoichiometric TaN/GaN interface. {delta}-phase TaN had I-V and C-V barrier heights of 0.55 eV and 0.8 eV respectively. On the other hand, TaN had an I-V barrier height near 0.7 eV and a C-V barrier height near 1.2 eV. The ideality factors for both {delta}-phase TaN and TaN were above 1.8 at all annealing temperatures, suggesting tunneling contributes significantly to current transport.

NOISY DISPERSION CURVE PICKING (NDCP): a Matlab friendly suite package for fully control dispersion curve picking

Science.gov (United States)

Granados, I.; Calo, M.; Ramos, V.

2017-12-01

We developed a Matlab suite package (NDCP, Noisy Dispersion Curve Picking) that allows a full control over parameters to identify correctly group velocity dispersion curves in two types of datasets: correlograms between two stations or surface wave records from earthquakes. Using the frequency-time analysis (FTAN), the procedure to obtain the dispersion curves from records with a high noise level becomes difficult, and sometimes, the picked curve result in a misinterpreted character. For correlogram functions, obtained with cross-correlation of noise records or earthquake's coda, a non-homogeneous noise sources distribution yield to a non-symmetric Green's function (GF); to retrieve the complete information contained in there, NDCP allows to pick the dispersion curve in the time domain both in the causal and non-causal part of the GF. Then the picked dispersion curve is displayed on the FTAN diagram to in order to check if it matches with the maximum of the signal energy avoiding confusion with overtones or spike of noise. To illustrate how NDCP performs, we show exemple using: i) local correlograms functions obtained from sensors deployed into a volcanic caldera (Los Humeros, in Puebla, Mexico), ii) regional correlograms functions between two stations of the National Seismological Service (SSN, Servicio Sismológico Nacional in Spanish), and iii) surface wave seismic record for an earthquake located in the Pacific Ocean coast of Mexico and recorded by the SSN. This work is supported by the GEMEX project (Geothermal Europe-Mexico consortium).

The relationship between adolescents' academic stress, impulsivity, anxiety, and skin picking behavior.

Science.gov (United States)

Yeo, Sun Kyung; Lee, Woo Kyeong

2017-08-01

Skin picking behavior involves an individual picking or biting their skin repeatedly. Although this behavior commonly occurs at a young age, little research has addressed its harmful effects among the Korean population. Therefore, we examined the characteristics of South Korean adolescents who reported skin picking behavior. South Korean students aged 12-16 years participated (N=410, females=52.2%). They completed questionnaires that addressed skin picking behavior, academic stress, impulsivity, and anxiety. The survey was conducted in Seoul and Gyeonggi-do from February-March 2016. Among participants, 66.8% reported that they had picked their skin and 15.4% did so currently. Skin picking was positively correlated with academic stress, impulsivity, and anxiety. Students who picked their skin more often displayed more anxiety, academic stress, and impulsivity. Future studies should address skin picking adolescents' characteristics, especially regarding anxiety and academic stress. Educational programs should be implemented to help adolescents decrease their anxiety and academic stress and prevent the worsening of skin picking behavior. Copyright © 2017 Elsevier B.V. All rights reserved.

Clinic Attendance for Antiretroviral Pills Pick-Up among HIV-Positive People in Nepal: Roles of Perceived Family Support and Associated Factors.

Science.gov (United States)

Ayer, Rakesh; Kikuchi, Kimiyo; Ghimire, Mamata; Shibanuma, Akira; Pant, Madhab Raj; Poudel, Krishna C; Jimba, Masamine

2016-01-01

HIV-positive people's clinic attendance for medication pick-up is critical for successful HIV treatment. However, limited evidence exists on it especially in low-income settings such as Nepal. Moreover, the role of family support in clinic attendance remains under-explored. Therefore, this study was conducted to examine the association between perceived family support and regular clinic attendance and to assess factors associated with regular clinic attendance for antiretroviral pills pick-up among HIV-positive individuals in Nepal. A cross-sectional study was conducted among 423 HIV-positive people in three districts of Nepal. Clinic attendance was assessed retrospectively for the period of 12 months. To assess the factors associated, an interview survey was conducted using a semi-structured questionnaire from July to August, 2015. Multiple logistic regression models were used to assess the factors associated with regular clinic attendance. Of 423 HIV-positive people, only 32.6% attended the clinics regularly. They were more likely to attend them regularly when they received high family support (AOR = 3.98, 95% CI = 2.29, 6.92), participated in support programs (AOR = 1.68, 95% CI = 1.00, 2.82), and had knowledge on the benefits of antiretroviral therapy (AOR = 2.62, 95% CI = 1.15, 5.99). In contrast, they were less likely to attend them regularly when they commuted more than 60 minutes to the clinics (AOR = 0.53, 95% CI = 0.30, 0.93), when they self-rated their health status as being very good (AOR = 0.13, 95% CI = 0.04, 0.44), good (AOR = 0.14, 95% CI = 0.04, 0.46), and fair (AOR = 0.21, 95% CI = 0.06, 0.70). HIV-positive individuals are more likely to attend the clinics regularly when they receive high family support, know the benefits of antiretroviral therapy, and participate in support programs. To improve clinic attendance, family support should be incorporated with HIV care programs in resource limited settings. Service providers should also consider

Clinic Attendance for Antiretroviral Pills Pick-Up among HIV-Positive People in Nepal: Roles of Perceived Family Support and Associated Factors

Science.gov (United States)

Kikuchi, Kimiyo; Ghimire, Mamata; Shibanuma, Akira; Pant, Madhab Raj; Poudel, Krishna C.; Jimba, Masamine

2016-01-01

Introduction HIV-positive people’s clinic attendance for medication pick-up is critical for successful HIV treatment. However, limited evidence exists on it especially in low-income settings such as Nepal. Moreover, the role of family support in clinic attendance remains under-explored. Therefore, this study was conducted to examine the association between perceived family support and regular clinic attendance and to assess factors associated with regular clinic attendance for antiretroviral pills pick-up among HIV-positive individuals in Nepal. Methods A cross-sectional study was conducted among 423 HIV-positive people in three districts of Nepal. Clinic attendance was assessed retrospectively for the period of 12 months. To assess the factors associated, an interview survey was conducted using a semi-structured questionnaire from July to August, 2015. Multiple logistic regression models were used to assess the factors associated with regular clinic attendance. Results Of 423 HIV-positive people, only 32.6% attended the clinics regularly. They were more likely to attend them regularly when they received high family support (AOR = 3.98, 95% CI = 2.29, 6.92), participated in support programs (AOR = 1.68, 95% CI = 1.00, 2.82), and had knowledge on the benefits of antiretroviral therapy (AOR = 2.62, 95% CI = 1.15, 5.99). In contrast, they were less likely to attend them regularly when they commuted more than 60 minutes to the clinics (AOR = 0.53, 95% CI = 0.30, 0.93), when they self-rated their health status as being very good (AOR = 0.13, 95% CI = 0.04, 0.44), good (AOR = 0.14, 95% CI = 0.04, 0.46), and fair (AOR = 0.21, 95% CI = 0.06, 0.70). Conclusion HIV-positive individuals are more likely to attend the clinics regularly when they receive high family support, know the benefits of antiretroviral therapy, and participate in support programs. To improve clinic attendance, family support should be incorporated with HIV care programs in resource limited settings

Bayesian Peak Picking for NMR Spectra

KAUST Repository

Cheng, Yichen

2014-02-01

Protein structure determination is a very important topic in structural genomics, which helps people to understand varieties of biological functions such as protein-protein interactions, protein–DNA interactions and so on. Nowadays, nuclear magnetic resonance (NMR) has often been used to determine the three-dimensional structures of protein in vivo. This study aims to automate the peak picking step, the most important and tricky step in NMR structure determination. We propose to model the NMR spectrum by a mixture of bivariate Gaussian densities and use the stochastic approximation Monte Carlo algorithm as the computational tool to solve the problem. Under the Bayesian framework, the peak picking problem is casted as a variable selection problem. The proposed method can automatically distinguish true peaks from false ones without preprocessing the data. To the best of our knowledge, this is the first effort in the literature that tackles the peak picking problem for NMR spectrum data using Bayesian method.

Effects of electron-irradiation on electrical properties of AgCa/Si Schottky diodes

International Nuclear Information System (INIS)

Harmatha, L.; Zizka, M.; Sagatova, A.; Nemec, M.; Hybler, P.

2013-01-01

This contribution presents the results of the current-voltage I-V and the capacitance-voltage C-V measurement on the Schottky diodes with the AgCa gate on the silicon n-type substrate. The Si substrate was irradiated by 5 MeV electrons with a different dose value before the Schottky diode preparation. (authors)

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

Science.gov (United States)

Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

2017-01-01

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

Automatic microseismic event picking via unsupervised machine learning

Science.gov (United States)

Chen, Yangkang

2018-01-01

Effective and efficient arrival picking plays an important role in microseismic and earthquake data processing and imaging. Widely used short-term-average long-term-average ratio (STA/LTA) based arrival picking algorithms suffer from the sensitivity to moderate-to-strong random ambient noise. To make the state-of-the-art arrival picking approaches effective, microseismic data need to be first pre-processed, for example, removing sufficient amount of noise, and second analysed by arrival pickers. To conquer the noise issue in arrival picking for weak microseismic or earthquake event, I leverage the machine learning techniques to help recognizing seismic waveforms in microseismic or earthquake data. Because of the dependency of supervised machine learning algorithm on large volume of well-designed training data, I utilize an unsupervised machine learning algorithm to help cluster the time samples into two groups, that is, waveform points and non-waveform points. The fuzzy clustering algorithm has been demonstrated to be effective for such purpose. A group of synthetic, real microseismic and earthquake data sets with different levels of complexity show that the proposed method is much more robust than the state-of-the-art STA/LTA method in picking microseismic events, even in the case of moderately strong background noise.

Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

Energy Technology Data Exchange (ETDEWEB)

Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

2015-11-09

The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

International Nuclear Information System (INIS)

Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

2008-01-01

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

2008-07-30

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

Energy Technology Data Exchange (ETDEWEB)

Drummond, T.J.

1999-03-11

Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

NARCIS (Netherlands)

Hajlasz, Marcin; Donkers, Johan J.T.M.; Pandey, Saurabh; Hurkx, Fred; Hueting, Raymond J.E.; Gravesteijn, Dirk J.

2017-01-01

In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress

Towards Sensor-Actuator Coupling in an Automated Order Picking System by Detecting Sealed Seams on Pouch Packed Goods

Directory of Open Access Journals (Sweden)

Frank Weichert

2014-10-01

Full Text Available In this paper, a novel concept of coupling the actuators of an automated order picking system for pouch packed goods with an embedded CCD camera sensor by means of image processing and machine learning is presented. The picking system mechanically combines the conveyance and singularization of a still-connected chain of pouch packed goods in a single machinery. The proposed algorithms perform a per-frame processing of the captured images in real-time to detect the sealed seams of the ongoing pouches. The detections are used to deduce cutting decisions in order to control the system’s actuators, namely the drive pulley for conveyance and the cutting device for the separation. Within this context, two controlling strategies are presented as well which specify the interaction of the sensor and the actuators. The detection is carried out by two different marker detection strategies: enhanced Template Matching as a heuristic and Support Vector Machines as a supervised classification based concept. Depending on the employed marker, detection rates of almost 100% with a calculation time of less than 40 ms are possible. From a logistic point of view, sealed seam widths of 20 mm prove feasible.

Generalized fragment picking in Rosetta: design, protocols and applications.

Directory of Open Access Journals (Sweden)

Dominik Gront

Full Text Available The Rosetta de novo structure prediction and loop modeling protocols begin with coarse grained Monte Carlo searches in which the moves are based on short fragments extracted from a database of known structures. Here we describe a new object oriented program for picking fragments that greatly extends the functionality of the previous program (nnmake and opens the door for new approaches to structure modeling. We provide a detailed description of the code design and architecture, highlighting its modularity, and new features such as extensibility, total control over the fragment picking workflow and scoring system customization. We demonstrate that the program provides at least as good building blocks for ab-initio structure prediction as the previous program, and provide examples of the wide range of applications that are now accessible.

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

NARCIS (Netherlands)

Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

2014-01-01

The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells.

Science.gov (United States)

Yi, Sum-Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-Hwa

2016-12-14

We developed Schottky junction photovoltaic cells based on multilayer Mo 1-x W x Se 2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo 0.5 W 0.5 Se 2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe 2 and WSe 2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo 0.5 W 0.5 Se 2 devices. Furthermore, we showed that Mo 0.5 W 0.5 Se 2 -based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

The controlled growth of graphene nanowalls on Si for Schottky photodetector

Directory of Open Access Journals (Sweden)

Quan Zhou

2017-12-01

Full Text Available Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

Electrical characterization of CdTe pixel detectors with Al Schottky anode

International Nuclear Information System (INIS)

Turturici, A.A.; Abbene, L.; Gerardi, G.; Principato, F.

2014-01-01

Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage (I–V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current–voltage characteristics

Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

Science.gov (United States)

2016-12-01

ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

International Nuclear Information System (INIS)

Saha, A.R.; Dimitriu, C.B.; Horsfall, A.B.; Chattopadhyay, S.; Wright, N.G.; O'Neill, A.G.; Maiti, C.K.

2006-01-01

Based on Quantum Mechanical (QM) carrier transport and the effects of interface states, a theoretical model has been developed to predict the anomalous current-voltage (I-V) characteristics of a non-ideal Ni-silicided Schottky diode at low temperatures. Physical parameters such as barrier height, ideality factor, series resistance and effective Richardson constant of a silicided Schottky diode were extracted from forward I-V characteristics and are subsequently used for the simulation of both forward and reverse I-V characteristics using a QM transport model in which the effects of interface state and bias dependent barrier reduction are incorporated. The present analysis indicates that the effects of barrier inhomogeneity caused by incomplete silicide formation at the junction and the interface states may change the conventional current transport process, leading to anomalous forward and reverse I-V characteristics for the Ni-silicided Schottky diode

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

International Nuclear Information System (INIS)

Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

2014-01-01

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The relationship of psychological trauma with trichotillomania and skin picking

Directory of Open Access Journals (Sweden)

Özten E

2015-05-01

Full Text Available Eylem Özten,1 Gökben Hızlı Sayar,1 Gül Eryilmaz,1 Gaye Kağan,2 Sibel Işik,3 Oğuz Karamustafalioğlu4 1Neuropsychiatry Health, Practice, and Research Center, Üsküdar University, 2Istanbul Neuropsychiatry Hospital, Üsküdar University, 3Turkish Red Crescent Altintepe Medical Center, 4Department of Psychology, Faculty of Human and Social Sciences, Üsküdar University, Istanbul, Turkey Objective: Interactions between psychological, biological and environmental factors are important in development of trichotillomania and skin picking. The aim of this study is to determine the relationship of traumatic life events, symptoms of post-traumatic stress disorder and dissociation in patients with diagnoses of trichotillomania and skin picking disorder.Methods: The study included patients who was diagnosed with trichotillomania (n=23 or skin picking disorder (n=44, and healthy controls (n=37. Beck Depression Inventory, Traumatic Stress Symptoms Scale and Dissociative Experiences Scale were administered. All groups checked a list of traumatic life events to determine the exposed traumatic events.Results: There was no statistical significance between three groups in terms of Dissociative Experiences Scale scores (P=0.07. But Beck Depression Inventory and Traumatic Stress Symptoms Scale scores of trichotillomania and skin picking groups were significantly higher than the control group. Subjects with a diagnosis of trichotillomania and skin picking reported statistically significantly higher numbers of traumatic and negative events in childhood compared to healthy subjects.Conclusion: We can conclude that trauma may play a role in development of both trichotillomania and skin picking. Increased duration of trichotillomania or skin picking was correlated with decreased presence of post-traumatic stress symptoms. The reason for the negatively correlation of severity of post-traumatic stress symptoms and self-harming behavior may be speculated as

Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

Science.gov (United States)

Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

2018-05-01

Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.

The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

Science.gov (United States)

Campbell, I. H.; Davids, P. S.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

1998-04-01

We present device model calculations of the current-voltage (I-V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I-V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I-V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited.

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

OpenAIRE

H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER

2014-01-01

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semicondu...

The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC

Science.gov (United States)

Omotoso, E.; Auret, F. D.; Igumbor, E.; Tunhuma, S. M.; Danga, H. T.; Ngoepe, P. N. M.; Taleatu, B. A.; Meyer, W. E.

2018-05-01

The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current-voltage ( I- V), capacitance-voltage ( C- V), deep-level transient spectroscopy, scanning electron microscope (SEM) and X-ray diffraction measurements were employed to study the thermal effect on the characteristics of the SBDs. Prior to thermal annealing of Schottky contacts, the I- V measurements results confirmed the good rectification behaviour with ideality factor of 1.06, Schottky barrier height of 1.20 eV and series resistance of 7 Ω. The rectification properties after annealing was maintained up to an annealing temperature of 500 °C, but deviated slightly above 500 °C. The uncompensated ionized donor concentration decreased with annealing temperature, which could be attributed to out-diffusion of the 4 H-SiC into the Au/Ni contacts and decrease in bonding due to formation of nickel silicides. We observed the presence of four deep-level defects with energies 0.09, 0.11, 0.16 and 0.65 eV below the conduction band before and after the isochronal annealing up to 600 °C. The conclusion drawn was that annealing did not affect the number of deep-level defects present in Au/Ni/4 H-SiC contacts. The variations in electrical properties of the devices were attributed to the phase transformations and interfacial reactions that occurred after isochronal annealing.

Integrating Soft Robotics with the Robot Operating System: A Hybrid Pick and Place Arm

Directory of Open Access Journals (Sweden)

Ross M. McKenzie

2017-08-01

Full Text Available Soft robotic systems present a variety of new opportunities for solving complex problems. The use of soft robotic grippers, for example, can simplify the complexity in tasks such as the grasping of irregular and delicate objects. Adoption of soft robotics by the informatics community and industry, however, has been slow and this is, in-part, due to the amount of hardware and software that must be developed from scratch for each use of soft system components. In this paper, we detail the design, fabrication, and validation of an open-source framework that we designed to lower the barrier to entry for integrating soft robotic subsystems. This framework is built on the robot operating system (ROS, and we use it to demonstrate a modular, soft–hard hybrid system, which is capable of completing pick and place tasks. By lowering this barrier to entry through our open sourced hardware and software, we hope that system designers and Informatics researchers will find it easy to integrate soft components into their existing ROS-enabled robotic systems.

Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

Science.gov (United States)

Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

2017-04-01

Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

Automatic first-break picking using the instantaneous traveltime attribute

KAUST Repository

Saragiotis, Christos; Alkhalifah, Tariq Ali

2012-01-01

Picking the first breaks is an important step in seismic processing. The large volume of the seismic data calls for automatic and objective picking. We introduce a new automatic first-break picker, which uses specifically designed time windows

Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag14+ ions

International Nuclear Information System (INIS)

Kumar, Ashish; Kumar, Tanuj; Kanjilal, D.; Hähnel, A.; Singh, R.

2014-01-01

Ni/GaN Schottky barrier diodes were irradiated with 200 MeV Ag ions up to fluence of 1 × 10 11 ions/cm 2 at the substrate temperature of 80 K. Post-irradiation current-voltage measurements showed that the ideality factor, n increased and the reverse leakage current, I R decreased with increase in fluence. But Schottky barrier height, ϕ b increased only marginally with increase in ion fluence. In situ resistivity measurements showed orders of magnitude increase in resistivity of GaN epitaxial film with irradiation fluence. Cross-sectional transmission electron microscopy images revealed the presence of defect clusters in bulk GaN after irradiation

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

Science.gov (United States)

Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

2017-12-01

In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

Energy Technology Data Exchange (ETDEWEB)

Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

2016-10-01

The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

DELIVERY AND PICK-UP PROBLEM TRANSPORTATION - MILK RUN AND CONVENTIONAL SYSTEMS

Directory of Open Access Journals (Sweden)

Delmo Alves de Moura

2016-09-01

Full Text Available This paper examines the role of inventory and transportation in the supply system of parts adopted by most of the Brazilian automotive companies to feed their assembly lines. It is a system for programmed collection of pieces called Milk Run that aims, within a window of time, to collect parts from suppliers, fulfilling established routes in order to minimize the cost of transport operations and reducing inventory in the supply chain. Milk Run, a scheduled collection system of parts can be carried out by automotive industry itself: the automaker manage the best route for its collector vehicle, determining the quantity of parts required to collect at each supplier within a given route, aiming to best utilize the capacity of the vehicle. Another way to work within the Milk Run system is the automaker to find the best routing and determines the amount of parts needed to be collected from each supplier on each trip. The collection, however, is held by a third carrier. As a third way of working, the assembler can determine the quantity of parts to collect and when it will require them. A logistics carrier determines the best routing for the collection of pieces in order to meet the production plan so that there is not a lack of parts or components on the assembly line, which would lead to a stop. In this case, the logistics carrier transports parts on its own fleet of vehicles or transfer the transport operation to a carrier.

Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy

Science.gov (United States)

Chirakkara, Saraswathi; Choudhury, Palash Roy; Nanda, K. K.; Krupanidhi, S. B.

2016-04-01

Undoped and In doped ZnO (IZO) thin films are grown on Pt coated silicon substrates Pt/Si by pulsed laser deposition to fabricate Pt/ZnO:In Schottky diodes. The Schottky diodes were investigated by conventional two-probe current-voltage (I-V) measurements and by the I-V spectroscopy tool of conductive atomic force microscopy (C-AFM). The large deviation of the ideality factor from unity and the temperature dependent Schottky barrier heights (SBHs) obtained from the conventional method imply the presence of inhomogeneous interfaces. The inhomogeneity of SBHs is confirmed by C-AFM. Interestingly, the I-V curves at different points are found to be different, and the SBHs deduced from the point diodes reveal inhomogeneity at the nanoscale at the metal-semiconductor interface. A reduction in SBH and turn-on voltage along with enhancement in forward current are observed with increasing indium concentration.

Using the Min/Max Method for Replenishment of Picking Locations

Directory of Open Access Journals (Sweden)

Apsalons Raitis

2017-03-01

Full Text Available The irregularity of removing quantities from a definite picking location in a warehouse very often results in the stock out in the particular picking address. In practice, the Red Card principle is used to determine a critical level for each picking location when it is necessary to start the replenishment of stock in the picking address. The question is how to calculate an adequate critical level. The guidelines in this paper explain in detail the solution of the problem using the Min/Max stock control method and mathematical algorithms adjusted by authors. In order to check the validity of these mathematical algorithms of the Min/Max method, the simulation modelling has been also done and presented.

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

International Nuclear Information System (INIS)

Li-Wen, Sang; Zhi-Xin, Qin; Long-Bin, Cen; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang; Cai-Jing, Cheng; Hong-Yan, Zhao; Zheng-Xiong, Lu; Jia-Xin, Ding; Lan, Zhao; Jun-Jie, Si; Wei-Guo, Sun

2008-01-01

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1 × 10 −6 A/cm 2 at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 × 10 12 cmHz 1/2 W −1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current

Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

Energy Technology Data Exchange (ETDEWEB)

Di Mario, Lorenzo [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Turchini, Stefano, E-mail: stefano.turchini@cnr.it [ISM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Zamborlini, Giovanni; Feyer, Vitaly [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Tian, Lin [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Schneider, Claus M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg (Germany); Rubini, Silvia [IOM-CNR, TASC Laboratory, Basovizza 34149, Trieste (Italy); Martelli, Faustino, E-mail: faustino.martelli@cnr.it [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy)

2016-11-15

Highlights: • The Schottky barrier at the interface between Cu and GaAs nanowires was measured. • Individual nanowires were investigated by X-ray Photoemission Microscopy. • The Schottky barrier at different positions along the nanowire was evaluated. - Abstract: We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Campbell, I.H.; Davids, P.S.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas75083 (United States)

1998-04-01

We present device model calculations of the current{endash}voltage (I{endash}V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I{endash}V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I{endash}V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited. {copyright} {ital 1998 American Institute of Physics.}

Interactive Micromanipulation of Picking and Placement of Nonconductive Microsphere in Scanning Electron Microscope

Directory of Open Access Journals (Sweden)

Ning Cao

2017-08-01

Full Text Available In this paper, classified theoretical models, consisting of contact with and placement of microsphere and picking operations, are simplified and established to depict the interactive behaviors of external and internal forces in pushing manipulations, respectively. Sliding and/or rolling cases, resulting in the acceleration of micromanipulations, are discussed in detail. Effective contact detection is achieved by combining alterations of light-shadow and relative movement displacement between the tip-sphere. Picking operations are investigated by typical interactive positions and different end tilt angles. Placements are realized by adjusting the proper end tilt angles. These were separately conducted to explore the interactive operations of nonconductive glass microspheres in a scanning electron microscope. The experimental results demonstrate that the proposed contact detection method can efficiently protect the end-tip from damage, regardless of operator skills in initial positioning operations. E-beam irradiation onto different interactive positions with end tilt angles can be utilized to pick up microspheres without bending the end-tip. In addition, the results of releasing deviations away from the pre-setting point were utilized to verify the effectiveness of the placement tilt angles.

Transverse Schottky spectra and beam transfer functions of coasting ion beams with space charge

International Nuclear Information System (INIS)

Paret, Stefan

2010-01-01

A study of the transverse dynamics of coasting ion beams with moderate space charge is presented in this work. From the dispersion relation with linear space charge, an analytic model describing the impact of space charge on transverse beam transfer functions (BTFs) and the stability limits of a beam is derived. The dielectric function obtained in this way is employed to describe the transverse Schottky spectra with linear space charge as well. The difference between the action of space charge and impedances is highlighted. The setup and the results of an experiment performed in the heavy ion synchrotron SIS-18 at GSI to detect space-charge effects at different beam intensities are explicated. The measured transverse Schottky spectra and BTFs are compared with the linear space-charge model. The stability diagrams constructed from the BTFs are presented. The space-charge parameters evaluated from the Schottky and BTF measurements are compared with estimations based on measured beam parameters. The impact of collective effects on the Schottky and BTF diagnostics is also investigated through numerical simulations. For this purpose the self-field of beams with linear and non-linear transverse density-distributions is computed on a twodimensional grid. The noise of the random particle distribution causes fluctuations of the dipole moment of the beam which produce the Schottky spectrum. BTFs are simulated by exciting the beam with transverse kicks. The simulation results are used to verify the space-charge model. (orig.)

Transverse Schottky spectra and beam transfer functions of coasting ion beams with space charge

Energy Technology Data Exchange (ETDEWEB)

Paret, Stefan

2010-02-22

A study of the transverse dynamics of coasting ion beams with moderate space charge is presented in this work. From the dispersion relation with linear space charge, an analytic model describing the impact of space charge on transverse beam transfer functions (BTFs) and the stability limits of a beam is derived. The dielectric function obtained in this way is employed to describe the transverse Schottky spectra with linear space charge as well. The difference between the action of space charge and impedances is highlighted. The setup and the results of an experiment performed in the heavy ion synchrotron SIS-18 at GSI to detect space-charge effects at different beam intensities are explicated. The measured transverse Schottky spectra and BTFs are compared with the linear space-charge model. The stability diagrams constructed from the BTFs are presented. The space-charge parameters evaluated from the Schottky and BTF measurements are compared with estimations based on measured beam parameters. The impact of collective effects on the Schottky and BTF diagnostics is also investigated through numerical simulations. For this purpose the self-field of beams with linear and non-linear transverse density-distributions is computed on a twodimensional grid. The noise of the random particle distribution causes fluctuations of the dipole moment of the beam which produce the Schottky spectrum. BTFs are simulated by exciting the beam with transverse kicks. The simulation results are used to verify the space-charge model. (orig.)

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

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H. MAZARI

2014-05-01

Full Text Available The current-voltage (I-V characteristics of Pt/(n.u.d-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing

Science.gov (United States)

So, Hongyun; Hou, Minmin; Jain, Sambhav R.; Lim, Jongwoo; Senesky, Debbie G.

2016-04-01

A microscale soot-particulate sensor using interdigitated platinum-gallium nitride (Pt-GaN) Schottky interfaces was developed to monitor fine soot particles within high-temperature environments (e.g., combustion exhausts and flues). Upon exposure to soot particles (30 to 50 nm in diameter) from an experimental chimney, an increased current (∼43.6%) is observed through the back-to-back Schottky contact to n-type GaN. This is attributed to a reduction in the effective Schottky barrier height (SBH) of ∼10 meV due to the electric field from the charged soot particles in the depletion region and exposed GaN surface. Furthermore, the microfabricated sensor was shown to recover sensitivity and regenerate the sensing response (∼11 meV SBH reduction) after exposure to temperature as high as 550 °C. This study supports the feasibility of a simple and reliable soot sensor to meet the increasing market demand for particulate matter sensing in harsh environments.

Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

Science.gov (United States)

Campbell, I. H.; Rubin, S.; Zawodzinski, T. A.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

1996-11-01

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy, 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM's) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM's on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices.

All-back-Schottky-contact thin-film photovoltaics

Science.gov (United States)

Nardone, Marco

2016-02-01

The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application

International Nuclear Information System (INIS)

Singh, Shaivalini; Park, Si-Hyun

2016-01-01

The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications.

National Niemann-Pick Disease Foundation

Science.gov (United States)

... nor does it host or receive funding from advertising or from the display of commercial content. This site complies to the HONcode standard for trustworthy health information: verify here . The National Niemann-Pick Disease Foundation ...

Excoriation (skin-picking) disorder in adults

DEFF Research Database (Denmark)

Leibovici, Vera; Koran, Lorrin M; Murad, Sari

2015-01-01

OBJECTIVE: We sought to estimate the lifetime prevalence of Excoriation (Skin-Picking) Disorder (SPD) in the Israeli adult population as a whole and compare SPD prevalence in the Jewish and Arab communities. We also explored demographic, medical and psychological correlates of SPD diagnosis. METH......-reported medical and psychiatric comorbidities between the Jewish and Arab subsamples suggest the possibility of cross-cultural variation in the correlates of this disorder.......OBJECTIVE: We sought to estimate the lifetime prevalence of Excoriation (Skin-Picking) Disorder (SPD) in the Israeli adult population as a whole and compare SPD prevalence in the Jewish and Arab communities. We also explored demographic, medical and psychological correlates of SPD diagnosis...

Estimating order-picking times for return heuristic - equations and simulations

Directory of Open Access Journals (Sweden)

Grzegorz Tarczyński

2015-09-01

Full Text Available Background: A key element of the evaluation of warehouse operation is the average order-picking time. In warehouses where the order-picking process is carried out according to the "picker-to-part" rule the order-picking time is usually proportional to the distance covered by the picker while picking items. This distance can by estimated by simulations or using mathematical equations. In the paper only the best described in the literature one-block rectangular warehouses are considered. Material and methods: For the one-block rectangular warehouses there are well known five routing heuristics. In the paper the author considers the return heuristic in two variants. The paper presents well known Hall's and De Koster's equations for the average distance traveled by the picker while completing items from one pick list. The author presents own proposals for calculating the expected distance. Results: the results calculated by the use of mathematical equations (the formulas of Hall, De Koster and own propositions were compared with the average values obtained using computer simulations. For the most cases the average error does not exceed 1% (except for Hall's equations. To carry out simulation the computer software Warehouse Real-Time Simulator was used. Conclusions: the order-picking time is a function of many variables and its optimization is not easy. It can be done in two stages: firstly using mathematical equations the set of the potentially best variants is established, next the results are verified using simulations. The results calculated by the use of equations are not precise, but possible to achieve immediately. The simulations are more time-consuming, but allow to analyze the order-picking process more accurately.

Research on random service system efficiency of sorted storage manual order picking manners%分类存储人工拣选随机服务系统效率研究

Institute of Scientific and Technical Information of China (English)

朱杰; 周丽; 郭键

2012-01-01

The manual order picking system with order arrival as Poisson flow, and single picking servicer can be considered as M/G/l random service system. This paper studies the efficiency optimization problem of manual order picking system. We also analyze the stochastic characteristics of arrived orders goods categories and items number. The paper establishes picker route stochastic models under sorted storage return-type and S-type picking for logistics distribution center to deduce corresponding picking time distribution functions. Experiment results show that the two models approximate all approach simulation better under permitted error conditions. Compare the two picking manners with five kinds of goods order frequency and storage assignment, and then get application situations. This paper provides reference for estimation picking time and waiting time of traditional rectangular logistic distribution center, and provides basis for choosing storage strategy.%可以把订单服从泊松输入、单个拣选人员提供服务的人工拣选作业系统看作M/G/1随机服务系统,研究此随机服务系统的效率优化问题.分析订单到达的物品种类与件数随机特性,建立分类存储返回型与S型拣选距离随机模型,分别推导相应的拣选时间分布.仿真结果表明,两个模型的结果能在误差允许条件下较好地与仿真逼近.比较5种物品订购频率和货位分配情况下的返回型和S型拣选方式,得出两种拣选方式各自适用的情况.研究结论可以为传统矩形配送中心的订单拣选时间、等待时间估计提供参考,可为拣选路径方式选择提供依据.

Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

Science.gov (United States)

Lee, Jung Ah; Rok Lim, Young; Jung, Chan Su; Choi, Jun Hee; Im, Hyung Soon; Park, Kidong; Park, Jeunghee; Kim, Gyu Tae

2016-10-01

To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.

Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

Energy Technology Data Exchange (ETDEWEB)

Padma, R.; Balaram, N.; Reddy, I. Neelakanta; Reddy, V. Rajagopal, E-mail: reddy_vrg@rediffmail.com

2016-07-01

The Au/Fe-doped ZnO/n-InP metal/interlayer/semiconductor (MIS) Schottky structure is fabricated with Fe-doped ZnO nanostructure (NS) as an interlayer. The field emission scanning electron microscopy and atomic force microscopy results demonstrated that the surface morphology of the Fe−ZnO NS on n-InP is fairly smooth. The x-ray diffraction results reveal that the average grain size of the Fe−ZnO film is 12.35 nm. The electrical properties of the Au/n-InP metal-semiconductor (MS) and Au/Fe−ZnO NS/n-InP MIS Schottky structures are investigated by current-voltage and capacitance-voltage measurements at room temperature. The Au/Fe−ZnO NS/n-InP MIS Schottky structure has good rectifying ratio with low-leakage current compared to the Au/n-InP MS structure. The barrier height obtained for the MIS structure is higher than those of MS Schottky structure because of the modification of the effective barrier height by the Fe−ZnO NS interlayer. Further, the barrier height, ideality factor and series resistance are determined for the MS and MIS Schottky structures using Norde and Cheung's functions and compared to each other. The estimated interface state density of MIS Schottky structure is lower than that of MS Schottky structure. Experimental results revealed that the Poole-Frenkel emission is the dominant conduction mechanism in the lower bias region whereas Schottky emission is the dominant in the higher bias region for both the Au/n-InP MS and Au/Fe−ZnO NS/n-InP MIS Schottky structures. - Highlights: • Barrier height of Au/n-InP Schottky diode was modified by Fe−ZnO nanostructure interlayer. • MIS structure has a good rectification ratio compared to the MS structure. • The interface state density of MIS structure is lower than that of MS structure. • Poole-Frenkel mechanism is found to dominate in both MS and MIS structure.

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Science.gov (United States)

Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2014-05-01

We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Zeng, Jian-Jhou; Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw

2014-05-01

The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances.

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

International Nuclear Information System (INIS)

Zeng, Jian-Jhou; Lin, Yow-Jon

2014-01-01

The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances

New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

Directory of Open Access Journals (Sweden)

V. G. Ivanov

2011-01-01

Full Text Available The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

International Nuclear Information System (INIS)

Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

2012-01-01

In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

Influence of the Interaction Between Graphite and Polar Surfaces of ZnO on the Formation of Schottky Contact

Science.gov (United States)

Yatskiv, R.; Grym, J.

2018-03-01

We show that the interaction between graphite and polar surfaces of ZnO affects electrical properties of graphite/ZnO Schottky junctions. A strong interaction of the Zn-face with the graphite contact causes interface imperfections and results in the formation of laterally inhomogeneous Schottky contacts. On the contrary, high quality Schottky junctions form on the O-face, where the interaction is significantly weaker. Charge transport through the O-face ZnO/graphite junctions is well described by the thermionic emission model in both forward and reverse directions. We further demonstrate that the parameters of the graphite/ZnO Schottky diodes can be significantly improved when a thin layer of ZnO2 forms at the interface between graphite and ZnO after hydrogen peroxide surface treatment.

Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

Science.gov (United States)

Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

2018-03-01

Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

An intelligent identification algorithm for the monoclonal picking instrument

Science.gov (United States)

Yan, Hua; Zhang, Rongfu; Yuan, Xujun; Wang, Qun

2017-11-01

The traditional colony selection is mainly operated by manual mode, which takes on low efficiency and strong subjectivity. Therefore, it is important to develop an automatic monoclonal-picking instrument. The critical stage of the automatic monoclonal-picking and intelligent optimal selection is intelligent identification algorithm. An auto-screening algorithm based on Support Vector Machine (SVM) is proposed in this paper, which uses the supervised learning method, which combined with the colony morphological characteristics to classify the colony accurately. Furthermore, through the basic morphological features of the colony, system can figure out a series of morphological parameters step by step. Through the establishment of maximal margin classifier, and based on the analysis of the growth trend of the colony, the selection of the monoclonal colony was carried out. The experimental results showed that the auto-screening algorithm could screen out the regular colony from the other, which meets the requirement of various parameters.

Pico Lantern: Surface reconstruction and augmented reality in laparoscopic surgery using a pick-up laser projector.

Science.gov (United States)

Edgcumbe, Philip; Pratt, Philip; Yang, Guang-Zhong; Nguan, Christopher; Rohling, Robert

2015-10-01

The Pico Lantern is a miniature projector developed for structured light surface reconstruction, augmented reality and guidance in laparoscopic surgery. During surgery it will be dropped into the patient and picked up by a laparoscopic tool. While inside the patient it projects a known coded pattern and images onto the surface of the tissue. The Pico Lantern is visually tracked in the laparoscope's field of view for the purpose of stereo triangulation between it and the laparoscope. In this paper, the first application is surface reconstruction. Using a stereo laparoscope and an untracked Pico Lantern, the absolute error for surface reconstruction for a plane, cylinder and ex vivo kidney, is 2.0 mm, 3.0 mm and 5.6 mm, respectively. Using a mono laparoscope and a tracked Pico Lantern for the same plane, cylinder and kidney the absolute error is 1.4 mm, 1.5 mm and 1.5 mm, respectively. These results confirm the benefit of the wider baseline produced by tracking the Pico Lantern. Virtual viewpoint images are generated from the kidney surface data and an in vivo proof-of-concept porcine trial is reported. Surface reconstruction of the neck of a volunteer shows that the pulsatile motion of the tissue overlying a major blood vessel can be detected and displayed in vivo. Future work will integrate the Pico Lantern into standard and robot-assisted laparoscopic surgery. Copyright © 2015 Elsevier B.V. All rights reserved.

Phenotypic correlations between ovum pick-up in vitro production traits and pregnancy rates in Zebu cows.

Science.gov (United States)

Vega, W H O; Quirino, C R; Serapião, R V; Oliveira, C S; Pacheco, A

2015-07-03

The growth of the Gyr breed in Brazil in terms of genetic gain for milk, along with conditions for market, has led to the use of ovum pick-up in vitro production (OPU-IVP) as a leader in biotechnology for the multiplication of genetic material. The aim of this study was to investigate phenotypic correlations between OPU-IVP-linked characteristics and pregnancy rates registered in an embryo transfer program using Gyr cows as oocyte donors. Data collected from 211 OPU sessions and 298 embryo transfers during the years 2012 and 2013 were analyzed and statistical analysis was performed. Estimates of simple Pearson correlations were calculated for NVcoc and PVcoc (number and proportion of viable cumulus-oocyte complexes, respectively); NcleavD4 and PcleavD4 (number and proportion of cleaved embryos on day 4 of culture, respectively); NTembD7 and PTembD7 (number and proportion of transferable embryos on day 7 of culture, respectively); NPrD30 and PPrD30 (number and proportion of pregnancies 30 days after transfer, respectively); and NPrD60 and PPrD60 (number and proportion of pregnancies 60 days after transfer, respectively). Moderate to moderately high correlations were found for all numerical characteristics, suggesting these as the most suitable parameters for selection of oocyte donors in Gyr programs. NVcoc is proposed as a selection trait due to positive correlations with percentage traits and pregnancy rates 30 and 60 days after transfer.

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

International Nuclear Information System (INIS)

Zhao Sheng-Lei; Mi Min-Han; Luo Jun; Wang Yi; Dai Yang; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Hou Bin

2014-01-01

In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device

Science.gov (United States)

Amorim, Cleber A.; Bernardo, Eric P.; Leite, Edson R.; Chiquito, Adenilson J.

2018-05-01

The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO2/Au–Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier height Φ B was estimated from I–V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I–V characteristics exhibited a Gaussian distribution having mean barrier heights {\\overline{{{Φ }}}}B of 0.30 eV and standard deviation σ s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm‑2 K‑2, leading to an effective mass of 0.58m 0. Consequently, the temperature dependence of I–V characteristics of the SnO2 nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.

Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

Energy Technology Data Exchange (ETDEWEB)

Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

1996-11-01

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. {copyright} {ital 1996 The American Physical Society.}

Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

International Nuclear Information System (INIS)

Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L.; Barashkov, N.N.; Ferraris, J.P.

1996-01-01

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM close-quote s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM close-quote s on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. copyright 1996 The American Physical Society

Determining The Optimal Order Picking Batch Size In Single Aisle Warehouses

NARCIS (Netherlands)

T. Le-Duc (Tho); M.B.M. de Koster (René)

2002-01-01

textabstractThis work aims at investigating the influence of picking batch size to average time in system of orders in a one-aisle warehouse under the assumption that order arrivals follow a Poisson process and items are uniformly distributed over the aisle's length. We model this problem as an

Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

Science.gov (United States)

Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

2018-05-01

The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

Canonical Schottky barrier heights of transition metal dichalcogenide monolayers in contact with a metal

Science.gov (United States)

Szcześniak, Dominik; Hoehn, Ross D.; Kais, Sabre

2018-05-01

The transition metal dichalcogenide (M X2 , where M =Mo , W and X =S , Se, Te) monolayers are of high interest for semiconducting applications at the nanoscale level; this interest is due to both their direct band gaps and high charge mobilities. In this regard, an in-depth understating of the related Schottky barrier heights, associated with the incorporation of M X2 sheets into novel low-dimensional metal-semiconductor junctions, is of crucial importance. Herein, we generate and provide analysis of the Schottky barrier heights behavior to account for the metal-induced gap states concept as its explanation. In particular, the present investigations concentrate on the estimation of the charge neutrality levels directly by employing the primary theoretical model, i.e., the cell-averaged Green's function formalism combined with the complex band structure technique. The results presented herein place charge neutrality levels in the vicinity of the midgap; this is in agreement with previous reports and analogous to the behavior of three-dimensional semiconductors. The calculated canonical Schottky barrier heights are also found to be in agreement with other computational and experimental values in cases where the difference between electronegativities of the semiconductor and metal contact is small. Moreover, the influence of the spin-orbit effects is herein considered and supports that Schottky barrier heights have metal-induced gap state-derived character, regardless whether spin-orbit coupling interactions are considered. The results presented within this report constitute a direct and vital verification of the importance of metal-induced gap states in explaining the behavior of observed Schottky barrier heights at M X2 -metal junctions.

Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

Energy Technology Data Exchange (ETDEWEB)

Kawazu, Takuya; Noda, Takeshi; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

2015-01-12

We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.

Impact of substrate off-angle on the m-plane GaN Schottky diodes

Science.gov (United States)

Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

2018-04-01

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward [000\\bar{1}]. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm-3) and carbon (>1016 cm-3) impurities. The residual carbon and oxygen impurities decreased to current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

Stock Picking via Nonsymmetrically Pruned Binary Decision Trees

OpenAIRE

Anton Andriyashin

2008-01-01

Stock picking is the field of financial analysis that is of particular interest for many professional investors and researchers. In this study stock picking is implemented via binary classification trees. Optimal tree size is believed to be the crucial factor in forecasting performance of the trees. While there exists a standard method of tree pruning, which is based on the cost-complexity tradeoff and used in the majority of studies employing binary decision trees, this paper introduces a no...

To develop a flying fish egg inspection system by a digital imaging base system

Science.gov (United States)

Chen, Chun-Jen; Jywe, Wenyuh; Hsieh, Tung-Hsien; Chen, Chien Hung

2015-07-01

This paper develops an automatic optical inspection system for flying fish egg quality inspection. The automatic optical inspection system consists of a 2-axes stage, a digital camera, a lens, a LED light source, a vacuum generator, a tube and a tray. This system can automatically find the particle on the flying egg tray and used stage to driver the tube onto the particle. Then use straw and vacuum generator to pick up the particle. The system pick rate is about 30 particles per minute.

Order Picking Process in Warehouse: Case Study of Dairy Industry in Croatia

Directory of Open Access Journals (Sweden)

Josip Habazin

2017-02-01

Full Text Available The proper functioning of warehouse processes is fundamental for operational improvement and overall logistic supply chain improvement. Order picking is considered one of the most important from the group. Throughout picking orders in warehouses, the presence of human work is highly reflected, with the main goal to reduce the process time as much as possible, that is, to the very minimum. There are several different order picking methods, and nowadays, the most common ones are being developed and are significantly dependent on the type of goods, the warehouse equipment, etc., and those that stand out are scanning and picking by voice. This paper will provide information regarding the dairy industry in the Republic of Croatia with the analysis of order picking process in the observed company. Overall research highlighted the problem and resulted in proposals of solutions.

Solar cycle variation of interstellar neutral He, Ne, O density and pick-up ions along the Earth's orbit

Science.gov (United States)

Sokół, Justyna M.; Bzowski, Maciej; Kubiak, Marzena A.; Möbius, Eberhard

2016-06-01

We simulated the modulation of the interstellar neutral (ISN) He, Ne, and O density and pick-up ion (PUI) production rate and count rate along the Earth's orbit over the solar cycle (SC) from 2002 to 2013 to verify if SC-related effects may modify the inferred ecliptic longitude of the ISN inflow direction. We adopted the classical PUI model with isotropic distribution function and adiabatic cooling, modified by time- and heliolatitude-dependent ionization rates and non-zero injection speed of PUIs. We found that the ionization losses have a noticeable effect on the derivation of the ISN inflow longitude based on the Gaussian fit to the crescent and cone peak locations. We conclude that the non-zero radial velocity of the ISN flow and the energy range of the PUI distribution function that is accumulated are of importance for a precise reproduction of the PUI count rate along the Earth orbit. However, the temporal and latitudinal variations of the ionization in the heliosphere, and particularly their variation on the SC time-scale, may significantly modify the shape of PUI cone and crescent and also their peak positions from year to year and thus bias by a few degrees the derived longitude of the ISN gas inflow direction.

Niemann-Pick type C disease: molecular mechanisms and potential therapeutic approaches

OpenAIRE

Rosenbaum, Anton I.; Maxfield, Frederick R.

2011-01-01

Cholesterol is an important lipid of mammalian cells. Its unique physicochemical properties modulate membrane behavior and it serves as the precursor for steroid hormones, oxysterols and vitamin D. Cholesterol is effluxed from the late endosomes/lysosomes via the concerted action of at least two distinct proteins: Niemann-Pick C1 and Niemann-Pick C2. Mutations in these two proteins manifest as Niemann-Pick type C disease – a very rare, usually fatal, autosomal, recessive, neurovisceral, lysos...

Stirring, charging, and picking: hunting tactics of potamotrygonid rays in the upper Paraná River

Directory of Open Access Journals (Sweden)

Domingos Garrone-Neto

Full Text Available Hunting tactics of potamotrygonid freshwater rays remain unreported under natural conditions. Three main foraging tactics of Potamotrygon falkneri and P. motoro are described here based on underwater observations in the upper Paraná River. Both species displayed similar behaviors. The most common tactic was to undulate the disc margins close to, or on, the bottom and thus stirring the substrate and uncovering hidden preys. Another tactic was to charge upon prey concentrated in the shallows. The least common tactic was to pick out prey adhered to the substrate. The first tactic is widespread in several species of marine rays in the Dasyatidae, whereas the remainder (especially picking up prey on substrata above water surface may be restricted to the Potamotrygonidae.

Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode

International Nuclear Information System (INIS)

Pandey, Rajiv K.; Singh, Arun Kumar; Prakash, Rajiv

2013-01-01

We report formation of polycarbazole (PCz)–graphene nanocomposite over indium tin oxide (ITO) coated glass substrate using electrochemical technique for fabrication of high performance Schottky diodes. The synthesized nanocomposite is characterized before fabrication of devices for confirmation of uniform distribution of graphene nanosheets in the polymer matrix. Pure PCz and PCz-graphene nanocomposites based Schottky diodes are fabricated of configuration Al/PCz/ITO and Al/PCz-graphene nanocomposite/ITO, respectively. The current density–voltage (J-V) characteristics and diode performance parameters (such as the ideality factor, barrier height, and reverse saturation current density) are compared under ambient condition. Al/PCz-graphene nanocomposite/ITO device exhibits better ideality factor in comparison to the device formed using pure PCz. It is also observed that the Al/PCz-graphene nanocomposite/ITO device shows large forward current density and low turn on voltage in comparison to Al/PCz/ITO device

A charge-based model of Junction Barrier Schottky rectifiers

Science.gov (United States)

Latorre-Rey, Alvaro D.; Mudholkar, Mihir; Quddus, Mohammed T.; Salih, Ali

2018-06-01

A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.

GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

CERN Document Server

Bourgoin, J C

2002-01-01

We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

An automated framework for NMR resonance assignment through simultaneous slice picking and spin system forming

KAUST Repository

Abbas, Ahmed; Guo, Xianrong; Jing, Bingyi; Gao, Xin

2014-01-01

positives and negatives impair the performance of resonance assignment methods. One of the main reasons for this problem is that the computational research community often considers peak picking and resonance assignment to be two separate problems, whereas

Solar wind heating by an embedded quasi-isothermal pick-up ion fluid

Directory of Open Access Journals (Sweden)

H. J. Fahr

Full Text Available It is well known that the solar wind plasma consists of primary ions of solar coronal origin and secondary ions of interstellar origin. Interstellar H-atoms penetrate into the inner heliosphere and when ionized there are converted into secondary ions. These are implanted into the magnetized solar wind flow and are essentially enforced to co-move with this flow. By nonlinear interactions with wind-entrained Alfvén waves the latter are processed in the co-moving velocity space. This pick-up process, however, also causes actions back upon the original solar wind flow, leading to a deceleration, as well as a heating of the solar wind plasma. The resulting deceleration is not only due to the loading effect, but also due to the action of the pressure gradient. To calculate the latter, it is important to take into account the stochastic acceleration that suffers at their convection out of the inner heliosphere by the quasi-linear interactions with MHD turbulences. Only then can the presently reported VOYAGER observations of solar wind decelerations and heatings in the outer heliosphere be understood in terms of the current, most likely values of interstellar gas parameters. In a consistent view of the thermodynamics of the solar wind plasma, which is composed of secondary ions and solar wind protons, we also derive that the latter are globally heated at their motion to larger solar distances. The arising heat transfer is due to the action of suprathermal ions which drive MHD waves that are partially absorbed by solar wind protons and thereby establish their observed quasi-polytropy. We obtain a quantitative expression for the solar wind proton pressure as a function of solar distance. This expression clearly shows the change from an adiabatic to a quasi-polytropic behaviour with a decreasing polytropic index at increasing distances, as has been observed by the VOYAGERS. This also allows one to calculate the average percentage of the intitial energy

Solar wind heating by an embedded quasi-isothermal pick-up ion fluid

Directory of Open Access Journals (Sweden)

H. J. Fahr

2002-10-01

Full Text Available It is well known that the solar wind plasma consists of primary ions of solar coronal origin and secondary ions of interstellar origin. Interstellar H-atoms penetrate into the inner heliosphere and when ionized there are converted into secondary ions. These are implanted into the magnetized solar wind flow and are essentially enforced to co-move with this flow. By nonlinear interactions with wind-entrained Alfvén waves the latter are processed in the co-moving velocity space. This pick-up process, however, also causes actions back upon the original solar wind flow, leading to a deceleration, as well as a heating of the solar wind plasma. The resulting deceleration is not only due to the loading effect, but also due to the action of the pressure gradient. To calculate the latter, it is important to take into account the stochastic acceleration that suffers at their convection out of the inner heliosphere by the quasi-linear interactions with MHD turbulences. Only then can the presently reported VOYAGER observations of solar wind decelerations and heatings in the outer heliosphere be understood in terms of the current, most likely values of interstellar gas parameters. In a consistent view of the thermodynamics of the solar wind plasma, which is composed of secondary ions and solar wind protons, we also derive that the latter are globally heated at their motion to larger solar distances. The arising heat transfer is due to the action of suprathermal ions which drive MHD waves that are partially absorbed by solar wind protons and thereby establish their observed quasi-polytropy. We obtain a quantitative expression for the solar wind proton pressure as a function of solar distance. This expression clearly shows the change from an adiabatic to a quasi-polytropic behaviour with a decreasing polytropic index at increasing distances, as has been observed by the VOYAGERS. This also allows one to calculate the average percentage of the intitial energy

Protein interacting with C kinase 1 (PICK1) reduces reinsertion rates of interaction partners sorted to Rab11-dependent slow recycling pathway

DEFF Research Database (Denmark)

Madsen, Kenneth Lindegaard; Thorsen, Thor Seneca; Rahbek-Clemmensen, Troels

2012-01-01

The scaffolding protein PICK1 (protein interacting with C kinase 1) contains an N-terminal PSD-95/Discs large/ZO-1 (PDZ) domain and a central lipid-binding Bin/amphiphysin/Rvs (BAR) domain. PICK1 is thought to regulate trafficking of its PDZ binding partners but different and even opposing...... functions have been suggested. Here, we apply ELISA-based assays and confocal microscopy in HEK293 cells with inducible PICK1 expression to assess in an isolated system the ability of PICK1 to regulate trafficking of natural and engineered PDZ binding partners. The dopamine transporter (DAT), which...

Particle detectors based on InP Schottky diodes

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan

2012-01-01

Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Science.gov (United States)

Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

2016-01-01

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Science.gov (United States)

Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre L.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.;

In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

Science.gov (United States)

Kumar, Ashish; Singh, R.; Kumar, Parmod; Singh, Udai B.; Asokan, K.; Karaseov, Platon A.; Titov, Andrei I.; Kanjilal, D.

2018-04-01

A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial layers is carried out by employing in-situ electrical resistivity and cross sectional transmission electron microscopy (XTEM) microstructure measurements. The change in the current transport mechanism of Au/n-GaN Schottky barrier diodes due to irradiation is reported. The role of irradiation temperature and ion type was also investigated. Creation of damage is studied in low and medium electron energy loss regimes by selecting different ions, Ag (200 MeV) and O (100 MeV) at various fluences at two irradiation temperatures (80 K and 300 K). GaN resistivity increases up to 6 orders of magnitude under heavy Ag ions. Light O ion irradiation has a much lower influence on sheet resistance. The presence of isolated defect clusters in irradiated GaN epilayers is evident in XTEM investigation which is explained on the basis of the thermal spike model.

Internal photoemission for photovoltaic using p-type Schottky barrier: Band structure dependence and theoretical efficiency limits

Science.gov (United States)

Shih, Ko-Han; Chang, Yin-Jung

2018-01-01

Solar energy conversion via internal photoemission (IPE) across a planar p-type Schottky junction is quantified for aluminum (Al) and copper (Cu) in the framework of direct transitions with non-constant matrix elements. Transition probabilities and k-resolved group velocities are obtained based on pseudo-wavefunction expansions and realistic band structures using the pseudopotential method. The k-resolved number of direct transitions, hole photocurrent density, quantum yield (QY), and the power conversion efficiency (PCE) under AM1.5G solar irradiance are subsequently calculated and analyzed. For Al, the parabolic and "parallel-band" effect along the U-W-K path significantly enhances the transition rate with final energies of holes mainly within 1.41 eV below the Fermi energy. For Cu, d-state hot holes mostly generated near the upper edge of 3d bands dominate the hole photocurrent and are weekly (strongly) dependent on the barrier height (metal film thickness). Hot holes produced in the 4s band behave just oppositely to their d-state counterparts. Non-constant matrix elements are shown to be necessary for calculations of transitions due to time-harmonic perturbation in Cu. Compared with Cu, Al-based IPE in p-type Schottky shows the highest PCE (QY) up to about 0.2673% (5.2410%) at ΦB = 0.95 eV (0.5 eV) and a film thickness of 11 nm (20 nm). It is predicted that metals with relatively dispersionless d bands (such as Cu) in most cases do not outperform metals with photon-accessible parallel bands (such as Al) in photon energy conversion using a planar p-type Schottky junction.

Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

KAUST Repository

Tian, He

2014-08-11

Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Science.gov (United States)

Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

2014-01-01

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

Science.gov (United States)

Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

2018-05-01

N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

Genetics Home Reference: Niemann-Pick disease

Science.gov (United States)

... are compartments within cells that break down and recycle different types of molecules. Acid sphingomyelinase is responsible ... A, Brodie SE, Desnick RJ, Wasserstein MP. Natural history of Type A Niemann-Pick disease: possible endpoints ...

Mediating broadband light into graphene–silicon Schottky photodiodes by asymmetric silver nanospheroids: effect of shape anisotropy

Science.gov (United States)

Bhardwaj, Shivani; Parashar, Piyush K.; Roopak, Sangita; Ji, Alok; Uma, R.; Sharma, R. P.

2018-05-01

Designing thinner, more efficient and cost-effective 2D materials/silicon Schottky photodiodes using the plasmonic concept is one of the most recent quests for the photovoltaic research community. This work demonstrates the enhanced performance of graphene–Si Schottky junction solar cells by introducing asymmetric spheroidal shaped Ag nanoparticles (NPs) embedded in a graphene monolayer (GML). The optical signatures of these Ag NPs (oblate, ortho-oblate, prolate and ortho-prolate) have been analyzed by discrete dipole approximation in terms of extinction efficiency and surface plasmon resonance tunability, against the quasi-static approximation. The spatial field distribution is enhanced by optimizing the size (a eff  =  100 nm) and aspect ratio (0.4) for all of the utilized Ag NPs with an optimized graphene environment (t  =  0.1 nm). An improvement of photon absorption in the thin Si wafer for the polychromatic spectral region (λ ~ 300–1100 nm) under an AM 1.5 G solar spectrum has been observed. This resulted in a photocurrent enhancement from 7.98 mA cm‑2 to 10.0 mA cm‑2 for oblate-shaped NPs integrated into GML/Si Schottky junction solar cells as compared to the bare cell. The structure used in this study to improve the graphene–Si Schottky junction’s performance is also advantageous for other graphene-like 2D material-based Schottky devices.

Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)

Energy Technology Data Exchange (ETDEWEB)

Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Nyamhere, Cloud [Department of Physics, Nelson Mandela Metropolitan University, Box 7700, Port Elizabeth 6031 (South Africa); Auret, Francois D.; Nel, Jacqueline M.; Mtangi, Wilbert; Diale, Mmatsae [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa)

2012-05-15

Ruthenium (Ru) Schottky contacts were fabricated on n-Ge (1 0 0) by electron beam deposition. Current-voltage (I-V), deep level transient spectroscopy (DLTS), and Laplace-DLTS techniques were used to characterise the as-deposited and annealed Ru/n-Ge (1 0 0) Schottky contacts. The variation of the electrical properties of the Ru samples annealed between 25 Degree-Sign C and 575 Degree-Sign C indicates the formation of two phases of ruthenium germanide. After Ru Schottky contacts fabrication, an electron trap at 0.38 eV below the conduction band with capture cross section of 1.0 Multiplication-Sign 10{sup -14} cm{sup -2} is the only detectable electron trap. The hole traps at 0.09, 0.15, 0.27 and 0.30 eV above the valence band with capture cross sections of 7.8 Multiplication-Sign 10{sup -13} cm{sup -2}, 7.1 Multiplication-Sign 10{sup -13} cm{sup -2}, 2.4 Multiplication-Sign 10{sup -13} cm{sup -2} and 6.2 Multiplication-Sign 10{sup -13} cm{sup -2}, respectively, were observed in the as-deposited Ru Schottky contacts. The hole trap H(0.30) is the prominent single acceptor level of the E-centre, and H(0.09) is the third charge state of the E-centre. H(0.27) shows some reverse annealing and reaches a maximum concentration at 225 Degree-Sign C and anneals out after 350 Degree-Sign C. This trap is strongly believed to be V-Sb{sub 2} complex formed from the annealing of V-Sb defect centre.

Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study

International Nuclear Information System (INIS)

Nakayama, T.; Kobinata, K.

2012-01-01

Schottky-barrier changes by the segregation and structural disorder are studied using the first-principles calculations and adopting Au/Si interface. The Schottky barrier for electrons simply decreases as increasing the valency of segregated atoms from II to VI families, which variation is shown closely related to how the Si atoms are terminated at the interface. On the other hand, the structural disorders (defects) prefer to locate near the interface and the Schottky barrier for hole carriers does not change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials reflecting the appearance of Si dangling bonds.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Science.gov (United States)

Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

2017-03-01

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

Characterization of a SiC MIS Schottky diode as RBS particle detector

Science.gov (United States)

Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

2018-02-01

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

Fuel transfer system upender using translation drive

International Nuclear Information System (INIS)

Hardin, R.T.

1985-01-01

A transfer system for a nuclear fuel container within a nuclear reactor facility includes a transport car for transporting the fuel container through a transfer tube between a reactor containment handling pool and a spent storage pool. The system includes mechanisms for automatically pivoting the fuel container from its horizontal transport mode to its vertical, fuel loading-unloading mode when the fuel container enters one of the pools. The pivot mechanisms include slotted brackets mounted upon the fuel container, and pivotable pick-up bars for engaging the brackets of the fuel container. As the transport car moves past the pick-up bars, the brackets of the fuel container engage the bars whereby the latter pivot so as to in turn cause pivoting of the fuel container through means of trunnions. Reverse movement of the transport car causes reverse pivoting of the container from the vertical to the horizontal mode and ultimate disengagement of the brackets from the pick-up bars. (author)

Efficacy of the “pick and roll” offense in top level European basketball teams

Science.gov (United States)

Marmarinos, Christos; Kostopoulos, Nikolaos; Apostolidis, Alexandros

2016-01-01

Abstract Team offense in basketball games consists of a set of offensive actions carried out with the cooperation of two or more players. Of these actions, the most commonly used in the last decade is the on-ball screen called the “pick and roll.” The aim of this study was to analyze all of the pick and rolls conducted in the Euroleague championship from all of the 24 participating teams and to investigate the possible relationships between success in the pick and roll and overall success of the teams. For this purpose, 12,376 pick and rolls from 502 matches were analyzed and classified in categories according to the end result of the offensive possession. The results showed that the most effective type of pick and roll offense was when a shot was attempted after 2 passes from the pick and roll occurrence, followed by the screener’s shot when he rolled to the basket. Additionally, linear regression analysis confirmed that pick and roll effectiveness could predict the final classification of the teams. Conclusively, coaches of the high level European clubs should focus on training the players to the most efficient phases of the pick and roll offense, so that the chances of winning the championship to be maximized. PMID:28149375

Efficacy of the “pick and roll” offense in top level European basketball teams

Directory of Open Access Journals (Sweden)

Marmarinos Christos

2016-06-01

Full Text Available Team offense in basketball games consists of a set of offensive actions carried out with the cooperation of two or more players. Of these actions, the most commonly used in the last decade is the on-ball screen called the “pick and roll.” The aim of this study was to analyze all of the pick and rolls conducted in the Euroleague championship from all of the 24 participating teams and to investigate the possible relationships between success in the pick and roll and overall success of the teams. For this purpose, 12,376 pick and rolls from 502 matches were analyzed and classified in categories according to the end result of the offensive possession. The results showed that the most effective type of pick and roll offense was when a shot was attempted after 2 passes from the pick and roll occurrence, followed by the screener’s shot when he rolled to the basket. Additionally, linear regression analysis confirmed that pick and roll effectiveness could predict the final classification of the teams. Conclusively, coaches of the high level European clubs should focus on training the players to the most efficient phases of the pick and roll offense, so that the chances of winning the championship to be maximized.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

International Nuclear Information System (INIS)

De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

2010-01-01

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Green Grape Detection and Picking-Point Calculation in a Night-Time Natural Environment Using a Charge-Coupled Device (CCD Vision Sensor with Artificial Illumination

Directory of Open Access Journals (Sweden)

Juntao Xiong

2018-03-01

Full Text Available Night-time fruit-picking technology is important to picking robots. This paper proposes a method of night-time detection and picking-point positioning for green grape-picking robots to solve the difficult problem of green grape detection and picking in night-time conditions with artificial lighting systems. Taking a representative green grape named Centennial Seedless as the research object, daytime and night-time grape images were captured by a custom-designed visual system. Detection was conducted employing the following steps: (1 The RGB (red, green and blue. Color model was determined for night-time green grape detection through analysis of color features of grape images under daytime natural light and night-time artificial lighting. The R component of the RGB color model was rotated and the image resolution was compressed; (2 The improved Chan–Vese (C–V level set model and morphological processing method were used to remove the background of the image, leaving out the grape fruit; (3 Based on the character of grape vertical suspension, combining the principle of the minimum circumscribed rectangle of fruit and the Hough straight line detection method, straight-line fitting for the fruit stem was conducted and the picking point was calculated using the stem with an angle of fitting line and vertical line less than 15°. The visual detection experiment results showed that the accuracy of grape fruit detection was 91.67% and the average running time of the proposed algorithm was 0.46 s. The picking-point calculation experiment results showed that the highest accuracy for the picking-point calculation was 92.5%, while the lowest was 80%. The results demonstrate that the proposed method of night-time green grape detection and picking-point calculation can provide technical support to the grape-picking robots.

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

International Nuclear Information System (INIS)

Wang, Yaqi; Alur, Siddharth; Sharma, Yogesh; Tong, Fei; Thapa, Resham; Gartland, Patrick; Issacs-Smith, Tamara; Ahyi, Claude; Williams, John; Park, Minseo; Johnson, Mark; Paskova, Tanya; Preble, Edward A; Evans, Keith R

2011-01-01

Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 mΩ cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-of- merit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I–V measurements were also carried out to study the forward and reverse transportation mechanisms. (fast track communication)

Automatic first-arrival picking based on extended super-virtual interferometry with quality control procedure

Science.gov (United States)

An, Shengpei; Hu, Tianyue; Liu, Yimou; Peng, Gengxin; Liang, Xianghao

2017-12-01

Static correction is a crucial step of seismic data processing for onshore play, which frequently has a complex near-surface condition. The effectiveness of the static correction depends on an accurate determination of first-arrival traveltimes. However, it is difficult to accurately auto-pick the first arrivals for data with low signal-to-noise ratios (SNR), especially for those measured in the area of the complex near-surface. The technique of the super-virtual interferometry (SVI) has the potential to enhance the SNR of first arrivals. In this paper, we develop the extended SVI with (1) the application of the reverse correlation to improve the capability of SNR enhancement at near-offset, and (2) the usage of the multi-domain method to partially overcome the limitation of current method, given insufficient available source-receiver combinations. Compared to the standard SVI, the SNR enhancement of the extended SVI can be up to 40%. In addition, we propose a quality control procedure, which is based on the statistical characteristics of multichannel recordings of first arrivals. It can auto-correct the mispicks, which might be spurious events generated by the SVI. This procedure is very robust, highly automatic and it can accommodate large data in batches. Finally, we develop one automatic first-arrival picking method to combine the extended SVI and the quality control procedure. Both the synthetic and the field data examples demonstrate that the proposed method is able to accurately auto-pick first arrivals in seismic traces with low SNR. The quality of the stacked seismic sections obtained from this method is much better than those obtained from an auto-picking method, which is commonly employed by the commercial software.

A Preliminary Analysis of the Phenomenology of Skin-Picking in Prader-Willi Syndrome

Science.gov (United States)

Morgan, Jessica R.; Storch, Eric A.; Woods, Douglas W.; Bodzin, Danielle; Lewin, Adam B.; Murphy, Tanya K.

2010-01-01

To examine the nature and psychosocial correlates of skin-picking behavior in youth with Prader-Willi Syndrome (PWS). Parents of 67 youth (aged 5-19 years) with PWS were recruited to complete an internet-based survey that included measures of: skin-picking behaviors, the automatic and/or focused nature of skin-picking, severity of skin-picking…

Local irradiation effects of one-dimensional ZnO based self-powered asymmetric Schottky barrier UV photodetector

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yaxue [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Qi, Junjie, E-mail: junjieqi@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Biswas, Chandan [Department of Electrical Engineering, University of California Los Angeles, California 90095 (United States); Li, Feng; Zhang, Kui; Li, Xin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083 (China)

2015-09-15

A self-powered metal-semiconductor-metal (MSM) UV photodetector was successfully fabricated based on Ag/ZnO/Au structure with asymmetric Schottky barriers. This exhibits excellent performance compared to many previous studies. Very high photo-to-dark current ratio (approximately 10{sup 5}–10{sup 6}) was demonstrated without applying any external bias, and very fast switching time of less than 30 ms was observed during the investigation. Opposite photocurrent direction was generated by irradiating different Schottky diodes in the fabricated photodetector. Furthermore, the device performance was optimized by largely irradiating both the ZnO microwire (MW) junctions. Schottky barrier effect theory and O{sub 2} adsorption–desorption theories were used to investigate the phenomenon. The device has potential applications in self-powered UV detection field and can be used as electrical power source for electronic, optoelectronic and mechanical devices. - Highlights: • A self-powered Schottky barrier UV photodetector based on 1-D ZnO is fabricated. • For the first time we investigate the local irradiation effects of UV detector. • Irradiating both the junctions and ZnO can optimize the performance of the device.

Skin Picking in Turkish Students: Prevalence, Characteristics, and Gender Differences

Science.gov (United States)

Calikusu, Celal; Kucukgoncu, Suat; Tecer, Ozlem; Bestepe, Emrem

2012-01-01

The aim of this study is to investigate the prevalence, characteristics, triggers, and consequences of skin picking (SP) in a sample of Turkish university students, with an emphasis on gender differences. A total of 245 students from two universities in Turkey were assessed by using the Skin Picking Inventory. In total, 87.8% of the students…

Schottky diodes between Bi2S3 nanorods and metal nanoparticles in a polymer matrix as hybrid bulk-heterojunction solar cells

International Nuclear Information System (INIS)

Saha, Sudip K.; Pal, Amlan J.

2015-01-01

We report the use of metal-semiconductor Schottky junctions in a conjugated polymer matrix as solar cells. The Schottky diodes, which were formed between Bi 2 S 3 nanorods and gold nanoparticles, efficiently dissociated photogenerated excitons. The bulk-heterojunction (BHJ) devices based on such metal-semiconductor Schottky diodes in a polymer matrix therefore acted as an efficient solar cell as compared to the devices based on only the semiconductor nanorods in the polymer matrix or when gold nanoparticles were added separately to the BHJs. In the latter device, gold nanoparticles offered plasmonic enhancement due to an increased cross-section of optical absorption. We report growth and characteristics of the Schottky junctions formed through an intimate contact between Bi 2 S 3 nanorods and gold nanoparticles. We also report fabrication and characterization of BHJ solar cells based on such heterojunctions. We highlight the benefit of using metal-semiconductor Schottky diodes over only inorganic semiconductor nanorods or quantum dots in a polymer matrix in forming hybrid BHJ solar cells

Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

Energy Technology Data Exchange (ETDEWEB)

Hadzi-Vukovic, J [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Jevtic, M [Institute for Physics, Pregrevica 118, 11080 Zemun (Serbia and Montenegro); Rothleitner, H [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Croce, P Del [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria)

2005-01-01

In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits.

Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

International Nuclear Information System (INIS)

Hadzi-Vukovic, J; Jevtic, M; Rothleitner, H; Croce, P Del

2005-01-01

In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits

An Embedded Real-Time Red Peach Detection System Based on an OV7670 Camera, ARM Cortex-M4 Processor and 3D Look-Up Tables

Directory of Open Access Journals (Sweden)

Marcel Tresanchez

2012-10-01

Full Text Available This work proposes the development of an embedded real-time fruit detection system for future automatic fruit harvesting. The proposed embedded system is based on an ARM Cortex-M4 (STM32F407VGT6 processor and an Omnivision OV7670 color camera. The future goal of this embedded vision system will be to control a robotized arm to automatically select and pick some fruit directly from the tree. The complete embedded system has been designed to be placed directly in the gripper tool of the future robotized harvesting arm. The embedded system will be able to perform real-time fruit detection and tracking by using a three-dimensional look-up-table (LUT defined in the RGB color space and optimized for fruit picking. Additionally, two different methodologies for creating optimized 3D LUTs based on existing linear color models and fruit histograms were implemented in this work and compared for the case of red peaches. The resulting system is able to acquire general and zoomed orchard images and to update the relative tracking information of a red peach in the tree ten times per second.

An embedded real-time red peach detection system based on an OV7670 camera, ARM cortex-M4 processor and 3D look-up tables.

Science.gov (United States)

Teixidó, Mercè; Font, Davinia; Pallejà, Tomàs; Tresanchez, Marcel; Nogués, Miquel; Palacín, Jordi

2012-10-22

This work proposes the development of an embedded real-time fruit detection system for future automatic fruit harvesting. The proposed embedded system is based on an ARM Cortex-M4 (STM32F407VGT6) processor and an Omnivision OV7670 color camera. The future goal of this embedded vision system will be to control a robotized arm to automatically select and pick some fruit directly from the tree. The complete embedded system has been designed to be placed directly in the gripper tool of the future robotized harvesting arm. The embedded system will be able to perform real-time fruit detection and tracking by using a three-dimensional look-up-table (LUT) defined in the RGB color space and optimized for fruit picking. Additionally, two different methodologies for creating optimized 3D LUTs based on existing linear color models and fruit histograms were implemented in this work and compared for the case of red peaches. The resulting system is able to acquire general and zoomed orchard images and to update the relative tracking information of a red peach in the tree ten times per second.

Irradiation effects on electrical properties of DNA solution/Al Schottky diodes

Science.gov (United States)

Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Iwamoto, Mitsumasa

2018-04-01

Deoxyribonucleic acid (DNA) has emerged as one of the most exciting organic material and as such extensively studied as a smart electronic material since the last few decades. DNA molecules have been reported to be utilized in the fabrication of small-scaled sensors and devices. In this current work, the effect of alpha radiation on the electrical properties of an Al/DNA/Al device using DNA solution was studied. It was observed that the carrier transport was governed by electrical interface properties at the Al-DNA interface. Current ( I)-voltage ( V) curves were analyzed by employing the interface limited Schottky current equations, i.e., conventional and Cheung and Cheung's models. Schottky parameters such as ideality factor, barrier height and series resistance were also determined. The extracted barrier height of the Schottky contact before and after radiation was calculated as 0.7845, 0.7877, 0.7948 and 0.7874 eV for the non-radiated, 12, 24 and 36 mGy, respectively. Series resistance of the structure was found to decline with the increase in the irradiation, which was due to the increase in the free radical root effects in charge carriers in the DNA solution. Results pertaining to the electronic profiles obtained in this work may provide a better understanding for the development of precise and rapid radiation sensors using DNA solution.

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Energy Technology Data Exchange (ETDEWEB)

Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Araújo, D. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Fiori, A. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Traoré, A. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Villar, M.P. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Eon, D.; Muret, P.; Pernot, J. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Teraji, T. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan)

2017-02-15

Highlights: • Metal/O-terminated diamond interfaces are analyzed by a variety of TEM techniques. • Thermal treatment is shown to modify structural and chemical interface properties. • Electrical behavior vs annealing is shown to be related with interface modification. • Interfaces are characterized with atomic resolution to probe inhomogeneities. • Oxide formation and modification is demonstrated in both Schottky diodes. - Abstract: Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (n{sub WC} = 1.02 and n{sub Zr} = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCR{sub WC} = 3.03 and OCR{sub Zr} = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.

Automatic first-break picking using the instantaneous traveltime attribute

KAUST Repository

Saragiotis, Christos

2012-01-01

Picking the first breaks is an important step in seismic processing. The large volume of the seismic data calls for automatic and objective picking. We introduce a new automatic first-break picker, which uses specifically designed time windows and an iterative procedure based on the instantaneous traveltime attribute. The method is fast as it only uses a few FFT\\'s per trace. We demonstrate the effectiveness of this automatic method by applying it on real test data.

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

International Nuclear Information System (INIS)

Wang Ying; Jiao Wen-Li; Hu Hai-Fan; Liu Yun-Tao; Cao Fei

2012-01-01

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm 2 and 6.5 mΩ·mm 2 for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET. (condensed matter: structural, mechanical, and thermal properties)

Membrane Localization is Critical for Activation of the PICK1 BAR Domain

Science.gov (United States)

Madsen, Kenneth L.; Eriksen, Jacob; Milan-Lobo, Laura; Han, Daniel S.; Niv, Masha Y.; Ammendrup-Johnsen, Ina; Henriksen, Ulla; Bhatia, Vikram K.; Stamou, Dimitrios; Sitte, Harald H.; McMahon, Harvey T.; Weinstein, Harel; Gether, Ulrik

2013-01-01

The PSD-95/Discs-large/ZO-1 homology (PDZ) domain protein, protein interacting with C kinase 1 (PICK1) contains a C-terminal Bin/amphiphysin/Rvs (BAR) domain mediating recognition of curved membranes; however, the molecular mechanisms controlling the activity of this domain are poorly understood. In agreement with negative regulation of the BAR domain by the N-terminal PDZ domain, PICK1 distributed evenly in the cytoplasm, whereas truncation of the PDZ domain caused BAR domain-dependent redistribution to clusters colocalizing with markers of recycling endosomal compartments. A similar clustering was observed both upon truncation of a short putative α-helical segment in the linker between the PDZ and the BAR domains and upon coexpression of PICK1 with a transmembrane PDZ ligand, including the alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) receptor GluR2 subunit, the GluR2 C-terminus transferred to the single transmembrane protein Tac or the dopamine transporter C-terminus transferred to Tac. In contrast, transfer of the GluR2 C-terminus to cyan fluorescent protein, a cytosolic protein, did not elicit BAR domain-dependent clustering. Instead, localizing PICK1 to the membrane by introducing an N-terminal myristoylation site produced BAR domain-dependent, but ligand-independent, PICK1 clustering. The data support that in the absence of PDZ ligand, the PICK1 BAR domain is inhibited through a PDZ domain-dependent and linker-dependent mechanism. Moreover, they suggest that unmasking of the BAR domain’s membrane-binding capacity is not a consequence of ligand binding to the PDZ domain per se but results from, and coincides with, recruitment of PICK1 to a membrane compartment. PMID:18466293

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy.

Science.gov (United States)

Flynn, Brendan T; Oleksak, Richard P; Thevuthasan, Suntharampillai; Herman, Gregory S

2018-01-31

A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In 3+ to In 0 , that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O 2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

Reducing the Schottky barrier between few-layer MoTe2 and gold

Science.gov (United States)

Qi, Dianyu; Wang, Qixing; Han, Cheng; Jiang, Jizhou; Zheng, Yujie; Chen, Wei; Zhang, Wenjing; Thye Shen Wee, Andrew

2017-12-01

Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200-400 °C). The resulting Schottky barrier height of the annealed MoTe2/Au interface is low (~23 meV). A new Raman A g mode of the 1T‧ metallic phase of MoTe2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe2. The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the transformation rate. With this method, the mobility and ON-state current of the MoTe2 transistor increase by ~3-4 orders of magnitude, the photocurrent of vertically stacked graphene/MoTe2/Au device increases ~300%, and the response time decreases by ~20%.

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

Science.gov (United States)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

In Vivo Assessment of Neurodegeneration in Type C Niemann-Pick Disease by IDEAL-IQ.

Science.gov (United States)

Guo, Ruo-Mi; Li, Qing-Ling; Luo, Zhong-Xing; Tang, Wen; Jiao, Ju; Wang, Jin; Kang, Zhuang; Chen, Shao-Qiong; Zhang, Yong

2018-01-01

To noninvasively assess the neurodegenerative changes in the brain of patients with Niemann-Pick type C (NPC) disease by measuring the lesion tissue with the iterative decomposition of water and fat with echo asymmetry and least square estimation-iron quantification (IDEAL-IQ). Routine brain MRI, IDEAL-IQ and 1 H-proton magnetic resonance spectroscopy ( 1 H-MRS, served as control) were performed on 12 patients with type C Niemann-Pick disease (4 males and 8 females; age range, 15-61 years; mean age, 36 years) and 20 healthy subjects (10 males and 10 females; age range, 20-65 years; mean age, 38 years). The regions with lesion and the normal appearing regions (NARs) of patients were measured and analyzed based on the fat/water signal intensity on IDEAL-IQ and the lipid peak on 1 H-MRS. Niemann-Pick type C patients showed a higher fat/water signal intensity ratio with IDEAL-IQ on T2 hyperintensity lesions and NARs (3.7-4.9%, p IQ instead of 1 H-MRS. The findings of this study suggested that IDEAL-IQ may be useful as a noninvasive and objective method in the evaluation of patients with NPC; additionally, IDEAL-IQ can be used to quantitatively measure the brain parenchymal adipose content and monitor patient follow-up after treatment of NPC.

Monolayer WS{sub 2} crossed with an electro-spun PEDOT-PSS nano-ribbon: Fabricating a Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Ortiz, Deliris N.; Vedrine, Josee [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Naylor, Carl H.; Charlie Johnson, A.T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States)

2016-12-15

Highlights: • First report on a Schottky diode formed from monolayer WS{sub 2} and PEDOT-PSSA nano-ribbon. • Straightforward and unique fabrication technique. • Diode operation is stable in air. - Abstract: WS{sub 2} and PEDOT-PSS were individually characterized with the goal of analyzing charge transport across a hetero-junction formed by these two materials. In thermal equilibrium electron flow from the WS{sub 2} conduction band into the polymer LUMO level leads to band bending that creates a potential barrier preventing further current. The measured current-voltage (I{sub DS}-V{sub DS}) curve across the hetero-junction was non-linear and asymmetric similar to a diode, with a turn-on voltage of 1.4 V and a rectification ratio of 12. The device I–V data were analyzed using the standard thermionic emission model of a Schottky junction and yielded an ideality parameter of 1.9 and a barrier height of 0.58 eV. This facile technique is the first report on a nano-diode fabricated using WS{sub 2} and PEDOT-PSS, opening up the possibility of extending this work to include other layered transition metal dichalcogenides and conducting polymers.

High Power Ga2O3-based Schottky Diode, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR Program will develop a new generation of radiation hard high-power high-voltage Ga2O3-based Schottky diode, which is suitable for applications in the space...

How 'ground-picked' olive fruits affect virgin olive oil ethanol content, ethyl esters and quality.

Science.gov (United States)

Beltran, Gabriel; Sánchez, Raquel; Sánchez-Ortiz, Araceli; Aguilera, Maria P; Bejaoui, Mohamed A; Jimenez, Antonio

2016-08-01

Olives dropped on the ground naturally sometimes are not separated from those fresh and healthy collected from the tree for harvest and processing. In this work we compared the quality, ethanol content and bioactive components of virgin olive oils from ground-picked olives, tree-picked fruits and their mixture. Ground-picked olives produced 'Lampante' virgin olive oils; these are of a lower quality category, because of important alterations in chemical and sensory characteristics. Ethyl esters showed the highest values, although under the regulated limit. The mixture of ground and tree-picked olives gave oils classified as 'virgin' because of sensory defects, although the quality parameters did not exceed the limits for the 'extra' category. Ethanol content showed a significant increase in the oils from ground- picked olives and their mixture with respect to those from tree-picked fruits. Furthermore, bioactive compounds showed a significant decrease as fruit quality was poorer. Ground-picked olives must be harvested and processed separately since they produce low-quality virgin olive oils with sensory defects and lower concentrations of bioactive compounds. The higher acidity and ethanol concentration observed in oils from ground-picked fruits or their mixture may help ethyl ester synthesis during storage. © 2015 Society of Chemical Industry. © 2015 Society of Chemical Industry.

The correlation between cherry picking and the distance that consumers travel to do grocery shopping

Directory of Open Access Journals (Sweden)

Louise Van Scheers

2013-04-01

Full Text Available Retailers often use price promotions to discriminate between consumers who can shift purchases over time and those who cannot. Retailers consistently tend to charge lower prices than necessary, pricing defensively to prevent loyal customers from cherry picking, or shifting to competitors. Knowledge about cherry picking behaviour will enable retailers to obtain a higher share of disposable income from even price-sensitive shoppers, while at the same time charging higher prices. Recent studies indicate that effective cherry picking entails saving costs through price searching over time, price searching across stores, or both. This study examines the relationship between cherry picking and the distance that consumers travel to do grocery shopping. Interviews were conducted at ten different retail outlets over three days, and the results show that there is a highly significant correlation between cherry picking and the distance that consumers travel to do grocery shopping.These results should help retailers to benefit from cherry picking by taking a proactive approach to store switching and store location, two of the main influences on cherry picking behaviour.

Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

International Nuclear Information System (INIS)

Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

2015-01-01

Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

The class characteristic mark of the H&M Mul-T-Lock picking tool in toolmarks examination.

Science.gov (United States)

Volkov, Nikolai; Finkelstein, Nir; Novoselsky, Yehuda; Tsach, Tsadok

2014-07-01

Mul-T-Lock is a high security lock cylinder distinguished by the use of a telescoping "pin-in-pin"-tumbler design. Picking the Mul-T-Lock cylinder with a traditional picking tool is highly complicated because it can get stuck between the inner and outer pins. The H&M Mul-T-Lock picking tool was designed to overcome this problem and facilitate the picking of the "pin-in-pin" cylinder. The purpose of this research is to determine whether H&M Mul-T-Lock picking tool leaves class characteristic mark and whether it can be distinguished from traditional picking tools marks and from regular key marks. It also describes and determines the class characteristic mark left on telescopic pins, its origin, recurrence, and its benefit to the toolmarks examiner. When receiving a Mul-T-Lock from a crime scene, a toolmarks examiner can quickly determine whether or not it was picked by an H&M Mul-T-Lock picking tool by noticing the class characteristic mark which this typical tool leaves. © 2014 American Academy of Forensic Sciences.

Automated Trajectory Planner of Industrial Robot for Pick-and-Place Task

Directory of Open Access Journals (Sweden)

S. Saravana Perumaal

2013-02-01

Full Text Available Industrial robots, due to their great speed, precision and cost-effectiveness in repetitive tasks, now tend to be used in place of human workers in automated manufacturing systems. In particular, they perform the pick-and-place operation, a non-value-added activity which at the same time cannot be eliminated. Hence, minimum time is an important consideration for economic reasons in the trajectory planning system of the manipulator. The trajectory should also be smooth to handle parts precisely in applications such as semiconductor manufacturing, processing and handling of chemicals and medicines, and fluid and aerosol deposition. In this paper, an automated trajectory planner is proposed to determine a smooth, minimum-time and collision-free trajectory for the pick-and-place operations of a 6-DOF robotic manipulator in the presence of an obstacle. Subsequently, it also proposes an algorithm for the jerk-bounded Synchronized Trigonometric S-curve Trajectory (STST and the ‘forbidden-sphere’ technique to avoid the obstacle. The proposed planner is demonstrated with suitable examples and comparisons. The experiments show that the proposed planner is capable of providing a smoother trajectory than the cubic spline based trajectory.

Pathological skin picking: case presentation and review of the literature

Directory of Open Access Journals (Sweden)

Maria Isabela Sarbu

2015-04-01

Full Text Available Pathological skin picking is a condition in which patients induce skin lesions through repetitive, compulsive excoriations of normal skin or skin with minor surface irregularities and they admit their role in the production of the lesions, but are unable to stop their behavior. Psychiatric comorbidities most often associated with skin picking include obsessive-compulsive disorder (OCD, anxiety disorders, mood disorders, body dysmorphic disorders, trichotillomania and compulsive-buying disorder. We report the case of a 17 year old female patient who addressed the dermatology department of our hospital with an eruption consisting of erythematous papules and plaques. The local examination revealed several clues of paramount importance in drawing the final conclusion and the psychiatric examination helped establish the diagnosis of pathological skin picking in a patient with obsessive-compulsive disorder.

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

Science.gov (United States)

Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

2016-04-27

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

Automated Peak Picking and Peak Integration in Macromolecular NMR Spectra Using AUTOPSY

Science.gov (United States)

Koradi, Reto; Billeter, Martin; Engeli, Max; Güntert, Peter; Wüthrich, Kurt

1998-12-01

A new approach for automated peak picking of multidimensional protein NMR spectra with strong overlap is introduced, which makes use of the program AUTOPSY (automatedpeak picking for NMRspectroscopy). The main elements of this program are a novel function for local noise level calculation, the use of symmetry considerations, and the use of lineshapes extracted from well-separated peaks for resolving groups of strongly overlapping peaks. The algorithm generates peak lists with precise chemical shift and integral intensities, and a reliability measure for the recognition of each peak. The results of automated peak picking of NOESY spectra with AUTOPSY were tested in combination with the combined automated NOESY cross peak assignment and structure calculation routine NOAH implemented in the program DYANA. The quality of the resulting structures was found to be comparable with those from corresponding data obtained with manual peak picking.

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide

Science.gov (United States)

Gora, V. E.; Chawanda, A.; Nyamhere, C.; Auret, F. D.; Mazunga, F.; Jaure, T.; Chibaya, B.; Omotoso, E.; Danga, H. T.; Tunhuma, S. M.

2018-04-01

We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300-800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications.

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.

Science.gov (United States)

Suyatin, Dmitry B; Jain, Vishal; Nebol'sin, Valery A; Trägårdh, Johanna; Messing, Maria E; Wagner, Jakob B; Persson, Olof; Timm, Rainer; Mikkelsen, Anders; Maximov, Ivan; Samuelson, Lars; Pettersson, Håkan

2014-01-01

Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~10(17) m(-2)) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.

Influence of B doping on the carrier transport mechanism and barrier height of graphene/ZnO Schottky contact

Science.gov (United States)

Li, Yapeng; Li, Yingfeng; Zhang, Jianhua; Tong, Ting; Ye, Wei

2018-03-01

The ZnO films were fabricated on the surface of n-Si(1 1 1) substrate using the sol-gel method, and the graphene was then transferred to its surface for the fabrication of the graphene/ZnO Schottky contact. The results showed that ZnO films presented a strong (0 0 2) preferred direction, and that the particle sizes on the surface decreased as the doping concentration of B ions increased. The electrical properties of the graphene/ZnO Schottky contact were measured by using current-voltage measurements. It was found that the graphene/ZnO Schottky contact showed a fine rectification behavior when the doping concentration of B ions was increased. However, when the doping concentration of the B ions increased to 0.15 mol l-1, the leakage current increased and rectification behavior weakened. This was due to the Fermi level pinning caused by the presence of the O vacancy at the interface of the graphene/ZnO Schottky contact.

Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

International Nuclear Information System (INIS)

Das, Subhashis; Majumdar, Shubhankar; Kumar, Rahul; Ghosh, Saptarsi; Biswas, Dhrubes

2016-01-01

An AlGaN/GaN heterostructure based metal–semiconductor–metal symmetrically bi-directional Schottky diode sensor structure has been employed to investigate acetone sensing and to analyze thermodynamics of acetone adsorption at low temperatures. The AlGaN/GaN heterostructure has been grown by plasma-assisted molecular beam epitaxy on Si (111). Schottky diode parameters at different temperatures and acetone concentrations have been extracted from I–V characteristics. Sensitivity and change in Schottky barrier height have been studied. Optimum operating temperature has been established. Coverage of acetone adsorption sites at the AlGaN surface and the effective equilibrium rate constant of acetone adsorption have been explored to determine the endothermic nature of acetone adsorption enthalpy.

Modeling and fabrication of 4H-SiC Schottky junction

Science.gov (United States)

Martychowiec, A.; Pedryc, A.; Kociubiński, A.

2017-08-01

The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

Anomalous Schottky specific heat and structural distortion in ferromagnetic PrAl2.

Science.gov (United States)

Pathak, Arjun K; Paudyal, D; Mudryk, Y; Gschneidner, K A; Pecharsky, V K

2013-05-03

Unique from other rare earth dialuminides, PrAl(2) undergoes a cubic to tetragonal distortion below T = 30 K in a zero magnetic field, but the system recovers its cubic symmetry upon the application of an external magnetic field of 10 kOe via a lifting of the 4f crystal field splitting. The nuclear Schottky specific heat in PrAl(2) is anomalously high compared to that of pure Pr metal. First principles calculations reveal that the 4f crystal field splitting in the tetragonally distorted phase of PrAl(2) underpins the observed unusual low temperature phenomena.

Fabrication of polymer Schottky diode with Al-PANI/MWCNT-Au structure

Directory of Open Access Journals (Sweden)

A Hajibadali

2014-11-01

Full Text Available In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows Ohm’s Law and at higher voltages, the mechanism is consistent with space charge limited conduction (SCLC emission. The parameters extracted from I-V characteristics were also calculated.

Energy measurement using a resonator based time-of-flight system

International Nuclear Information System (INIS)

Pardo, R.C.; Clifft, B.; Johnson, K.W.; Lewis, R.N.

1983-01-01

A resonant pick-up time-of-flight system has been developed for the precise measurement of beam energy at the Argonne Tandem-Linac Accelerator System (ATLAS). The excellent timing characteristics available with ATLAS beams make it desirable to design the beam transport system to be isochronous. The advantages of the resonant time-of-flight system over other energy analysis systems such as the dispersive magnet system are numerous. The system is non-interceptive and non-destructive and preserves the beam phase space. It is non-dispersive. Path length variations are not introduced into the beam which would reduce the timing resolution. It has a large signal-to-noise ratio when compared to non-resonant beam pick-up techniques. It provides the means to precisely set the linac energy and potentially to control the energy in a feedback loop. Finally, the resonant pick-up time-of-flight system is less expensive than an equivalent magnetic system. It consists of two beam-excited resonators, associated electronics to decode the information, a computer interface to the linac PDP 11/34 control computer, and software to analyze the information and deduce the measured beam energy. This report describes the system and its components and gives a schematic overview

Haloperidol augmentation of fluvoxamine in skin picking disorder: a case report

Directory of Open Access Journals (Sweden)

Luca Maria

2012-07-01

Full Text Available Abstract Introduction Compulsive skin picking, being part of the broader category of impulse control disorders, is considered a residual diagnosis in the Diagnostic and Statistical Manual of Mental Disorders, Fourth Edition, Text Revision. It is characterized by excessive scratching or picking of normal skin, or skin with minor surface irregularities, and occurs in 2% of patients attending dermatology clinics. Despite the clinical relevance of this disorder, no clear guidelines are available yet; clinical management is, therefore, compromised and the day-to-day clinical practice is burdened by difficulties. Studies on selective serotonin reuptake inhibitors and anti-epileptic drugs have provided limited results. The association between anti-depressants and anti-epileptics has been found to be beneficial in some impulse control disorders, but in skin picking no previous studies have been conducted on this pharmacological approach. There are very few reports on the efficacy of anti-psychotics in skin picking. Case presentation The therapeutic path described in this case report produced good results for a 59-year-old Caucasian woman. The first therapeutic approach, with fluvoxamine and oxcarbazepine was partially effective; then, the suspension of oxcarbazepine and haloperidol augmentation of fluvoxamine were adopted. After 10 weeks, a significant improvement of the disease was observed: the clinical picture and the associated symptoms were nearly solved. Conclusions To the best of our knowledge, this is the first article reporting the association of fluvoxamine and haloperidol in skin picking disorder. It might be useful to perform further research regarding the treatment of skin picking disorder: in clinical practice, several variables might limit the choice of certain drugs. Therefore, it would be useful for the clinician to be aware of other therapeutic options.

Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

International Nuclear Information System (INIS)

Horvath, Zs. J.

1994-01-01

The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

21 CFR 872.6650 - Massaging pick or tip for oral hygiene.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Massaging pick or tip for oral hygiene. 872.6650 Section 872.6650 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES... hygiene. (a) Identification. A massaging pick or tip for oral hygiene is a rigid, pointed device intended...

The resistive instability damper system for the first stage of the UNK accelerator with IIR-filter in feedback

International Nuclear Information System (INIS)

Zhabitskij, V.M.; Korenev, I.L.; Yudin, L.A.

1991-01-01

The resistive instability damper system for the coasting beam in the accelerator is discussed. The system for each of two directions of beam transverse coherent oscillations includes two pairs of pick-up electrodes and damping kickers connected by delayed negative feedback. It has been shown that damping regime can be achieved for one and the same pick-up and kicker location independently on imQ. 8 refs.; 4 figs

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Directory of Open Access Journals (Sweden)

Moonsang Lee

2018-06-01

Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

Grasp Densities for Grasp Refinement in Industrial Bin Picking

DEFF Research Database (Denmark)

Hupfauf, Benedikt; Hahn, Heiko; Bodenhagen, Leon

in terms of object-relative gripper pose, can be learned from empirical experience, and allow the automatic choice of optimal grasps in a given scene context (object pose, workspace constraints, etc.). We will show grasp densities extracted from empirical data in a real industrial bin picking context...... generated in industrial bin-picking for grasp learning. This aim is achieved by using the novel concept of grasp densities (Detry et al., 2010). Grasp densities can describe the full variety of grasps that apply to specific objects using specific grippers. They represent the likelihood of grasp success...

Interface feature characterization and Schottky interfacial layer confirmation of TiO{sub 2} nanotube array film

Energy Technology Data Exchange (ETDEWEB)

Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, 341300 Ganzhou (China); Tang, Ningxin; Yang, Hongzhi; Leng, Xian [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Zou, Jianpeng, E-mail: zoujp@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China)

2015-11-15

Highlights: • Interfacial fusion of TiO{sub 2} nanotube film increases with annealing temperature. • Interface bonding force of the film increases with annealing temperature. • We report the forth stage of nanofibers formation in the growing mechanism. • TiO{sub 2} nanotubes grow from Schottky interface layer rather than from Ti substrate. • Schottky interface layer's thickness of 35–45 nm is half the diameter of nanotube. - Abstract: We report here characterization of the interfacial microstructure and properties of titanium dioxide (TiO{sub 2}) nanotube array films fabricated by anodization. Field effect scanning electron microscopy (FESEM), X-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM), selected area electron diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the interface of the film. With increasing annealing temperature from 200 °C to 800 °C, the interfacial fusion between the film and the Ti substrate increased. The phase transformation of the TiO{sub 2} nanotube film from amorphous to anatase to rutile took place gradually; as the phase transformation progressed, the force needed to break the film increased. The growth of TiO{sub 2} nanotube arrays occurs in four stages: barrier layer formation, penetrating micropore formation, regular nanotube formation, and nanofiber formation. The TiO{sub 2} nanotubes grow from the Schottky interface layer rather than from the Ti substrate. The Schottky interface layer's thickness of 35–45 nm was identified as half the diameter of the corresponding nanotube, which shows good agreement to the Schottky interface layer growth model. The TiO{sub 2} nanotube film was amorphous and the Ti substrate was highly crystallized with many dislocation walls.

Monolithic integrated photoreceiver for 1.3--1.55-μm wavelengths: Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy

International Nuclear Information System (INIS)

Therani, A.H.; Decoster, D.; Vilcot, J.P.; Razeghi, M.

1988-01-01

We present a monolithic integrated circuit associating a Schottky photodiode and a field-effect transistor which has been fabricated, for the first time, on Ga/sub 0.49/In/sub 0.51/P/Ga/sub 0.47/In/sub 0.53/As strained heteroepitaxial material. Static, dynamic, and noise properties of the Schottky photodiode, the field-effect transistor, and the integrated circuit have been investigated and are reported. As an example, dynamic responsivity up to 50 A/W can be achieved at 1.3-μm wavelength for the integrated photoreceiver. The performance of the device is discussed, taking into account the integrated circuit design and the main characteristics of the material

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

Comparative pick-up ion distributions at Mars and Venus: Consequences for atmospheric deposition and escape

Science.gov (United States)

Curry, Shannon M.; Luhmann, Janet; Ma, Yingjuan; Liemohn, Michael; Dong, Chuanfei; Hara, Takuya

2015-09-01

Without the shielding of a substantial intrinsic dipole magnetic field, the atmospheres of Mars and Venus are particularly susceptible to similar atmospheric ion energization and scavenging processes. However, each planet has different attributes and external conditions controlling its high altitude planetary ion spatial and energy distributions. This paper describes analogous test particle simulations in background MHD fields that allow us to compare the properties and fates, precipitation or escape, of the mainly O+ atmospheric pick-up ions at Mars and Venus. The goal is to illustrate how atmospheric and planetary scales affect the upper atmospheres and space environments of our terrestrial planet neighbors. The results show the expected convection electric field-related hemispheric asymmetries in both precipitation and escape, where the degree of asymmetry at each planet is determined by the planetary scale and local interplanetary field strength. At Venus, the kinetic treatment of O+ reveals a strong nightside source of precipitation while Mars' crustal fields complicate the simple asymmetry in ion precipitation and drive a dayside source of precipitation. The pickup O+ escape pattern at both Venus and Mars exhibits low energy tailward escape, but Mars exhibits a prominent, high energy 'polar plume' feature in the hemisphere of the upward convection electric field while the Venus ion wake shows only a modest poleward concentration. The overall escape is larger at Venus than Mars (2.1 ×1025 and 4.3 ×1024 at solar maximum, respectively), but the efficiency (likelihood) of O+ escaping is 2-3 times higher at Mars. The consequences of these comparisons for pickup ion related atmospheric energy deposition, loss rates, and detection on spacecraft including PVO, VEX, MEX and MAVEN are considered. In particular, both O+ precipitation and escape show electric field controlled asymmetries that grow with energy, while the O+ fluxes and energy spectra at selected spatial

Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Energy Technology Data Exchange (ETDEWEB)

Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

2011-10-01

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

Science.gov (United States)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Planar InP-based Schottky barrier diodes for terahertz applications

International Nuclear Information System (INIS)

Zhou Jingtao; Yang Chengyue; Ge Ji; Jin Zhi

2013-01-01

Based on characteristics such as low barrier and high electron mobility of lattice matched In 0.53 Ga 0.47 As layer, InP-based Schottky barrier diodes (SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32 Ω; and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss, are promising for applications in the terahertz mixer, multiplier and detector circuits. (semiconductor devices)

Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

International Nuclear Information System (INIS)

Reddy, V. Rajagopal; Rao, P. Koteswara; Ramesh, C.K.

2007-01-01

Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN (n d = 4.07 x 10 17 cm -3 ) have been investigated using current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75 eV (I-V) and 0.93 eV (C-V), respectively. It is noted that the barrier height increased when the contact was annealed at 300 deg. C and slightly decreased upon annealing at temperatures of 400 deg. C and 500 deg. C. The extracted Schottky barrier heights are 0.99 eV (I-V), 1.34 eV (C-V) for 300 deg. C, 0.88 eV (I-V), 1.20 eV (C-V) for 400 deg. C and 0.72 eV (I-V), 1.08 eV (C-V) for 500 deg. C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures

Position Control Method For Pick And Place Robot Arm For Object Sorting System

Directory of Open Access Journals (Sweden)

Khin Moe Myint

2015-08-01

Full Text Available The more increase the number of industries in developing countries the more require labourers or workers in that. To reduce the cost of labour force and to increase the manufacturing capacity of industries the advanced robot arms are more needed. The aim of this journal is to eliminate the manual control for object sorting system.Robot arm design in this research uses two joints three links and servo motors to drive. Microcontroller is used to generate required PWM signal for servo motors. In this research the position control of robot arm was designed by using kinematic control methods. There are two types of kinematic control methods which are forward and reverse kinematic methods. In forward kinematic method the input parameters are the joint angles and link length of robot arm and then the output is the position at XYZ coordinate of tool or gripper. In inverse kinematic the input parameters are position at XYZ coordinate of gripper and the link length of robot arm and then the output parameters are the joint angles. So kinematic methods can explain the analytical description of the geometry motion of the manipulator with reference to a robot coordinate system fixed to a frame without consideration of the forces or the moments causing the movements. For sorting system Metal detector is used to detect the metal or non-metal. This position control of pick and place robot arm is fully tested and the result is obtained more precisely.

Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

Energy Technology Data Exchange (ETDEWEB)

Gimenez, E.N., E-mail: Eva.Gimenez@diamond.ac.uk [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom); Astromskas, V. [University of Surrey (United Kingdom); Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N. [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom)

2016-07-11

A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e{sup −} collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system. - Highlights: • A high atomic number (CdTe sensor based) photon-counting detector was developed. • Polarization effects affected the image were minimized by regularly refreshing the bias voltage and stabilizing the temperature. • Good spatial resolution and image quality was achieved following this procedure.

Fundamental studies of graphene/graphite and graphene-based Schottky photovoltaic devices

Science.gov (United States)

Miao, Xiaochang

In the carbon allotropes family, graphene is one of the most versatile members and has been extensively studied since 2004. The goal of this dissertation is not only to investigate the novel fundamental science of graphene and its three-dimensional sibling, graphite, but also to explore graphene's promising potential in modern electronic and optoelectronic devices. The first two chapters provide a concise introduction to the fundamental solid state physics of graphene (as well as graphite) and the physics at the metal/semiconductor interfaces. In the third chapter, we demonstrate the formation of Schottky junctions at the interfaces of graphene (semimetal) and various inorganic semiconductors that play dominating roles in today's semiconductor technology, such as Si, SiC, GaAs and GaN. As shown from their current-voltage (I -V) and capacitance-voltage (C-V) characteristics, the interface physics can be well described within the framework of the Schottky-Mott model. The results are also well consist with that from our previous studies on graphite based Schottky diodes. In the fourth chapter, as an extension of graphene based Schottky work, we investigate the photovoltaic (PV) effect of graphene/Si junctions after chemically doped with an organic polymer (TFSA). The power conversion efficiency of the solar cell improves from 1.9% to 8.6% after TFSA doping, which is the record in all graphene based PVs. The I -V, C-V and external quantum efficiency measurements suggest 12 that such a significant enhancement in the device performance can be attributed to a doping-induced decrease in the series resistance and a simultaneous increase in the built-in potential. In the fifth chapter, we investigate for the first time the effect of uniaxial strains on magneto-transport properties of graphene. We find that low-temperature weak localization effect in monolayer graphene is gradually suppressed under increasing strains, which is due to a strain-induced decreased intervalley

Schottky-Gated Probe-Free ZnO Nanowire Biosensor

KAUST Repository

Yeh, Ping-Hung

2009-12-28

(Figure Presented) A nanowire-based nanosensor for detecting biologically and chemically charged molecules that is probe-free and highly sensitive is demonstrated. The device relies on the nonsymmetrical Schottky contact under reverse bias (see figure) and is much more sensitive than the device based on the symmetric ohmic contact. This approach serves as a guideline for designing more practical chemical and biochemical sensors. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

Effect of hydrogen on ZnO films and Au/ZnO Schottky contacts

International Nuclear Information System (INIS)

Tsiarapas, C; Girginoudi, D; Georgoulas, N

2014-01-01

The structural, optical and electrical properties of ZnO films for different amounts of incorporated hydrogen (H), as well as the electrical characteristics of Au Schottky contacts based on these ZnO layers have been investigated. The films were deposited with the dc-magnetron sputtering technique, varying the H flow rate in the Ar/H sputtering gas. We found a significant improvement of the crystallinity (as obtained from x-ray diffraction spectra), Hall mobility and resistivity as the H concentration per vol. [H 2 ] (during deposition) increases from 0% to 33.3%, which is followed by degradation for further [H 2 ] increase. A high dependence of the carrier mobility on the grain size is also noted. The Schottky diodes were characterized through current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. In correlation with the basic film properties, we obtained the best results for the Schottky diodes with [H 2 ] = 33.3%, in terms of higher rectification ratio, lower ideality factor (η) and series resistance (R s ). Both the electron concentration n and the ionized donors' concentration N D (obtained from C–V curves) increase constantly with [H 2 ] increase, and that seems to be consistent with our suggestion that H acts as a donor in ZnO. (paper)

Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction

International Nuclear Information System (INIS)

Kalita, Golap; Hirano, Ryo; Ayhan, Muhammed E; Tanemura, Masaki

2013-01-01

We demonstrate fabrication of a Schottky junction diode with direct growth graphene on n-Si by the solid phase reaction approach. Metal-assisted crystallization of a-C thin film was performed to synthesize transfer-free graphene directly on a SiO 2 patterned n-Si substrate. Graphene formation at the substrate and catalyst layer interface is achieved in presence of a Co catalytic and CoO carbon diffusion barrier layer. The as-synthesized material shows a linear current–voltage characteristic confirming the metallic behaviour of the graphene structure. The direct grown graphene on n-Si substrate creates a Schottky junction with a potential barrier of 0.44 eV and rectification diode characteristic. Our finding shows that the directly synthesized graphene on Si substrate by a solid phase reaction process can be a promising technique to fabricate an efficient Schottky junction device. (paper)

Nibbling and picking in obese patients with Binge Eating Disorder.

Science.gov (United States)

Masheb, Robin M; Roberto, Christina A; White, Marney A

2013-12-01

The goal of this study was to examine the clinical utility of nibbling behavior, defined as eating in an unplanned and repetitious manner between meals and snacks without a sense of loss of control, in obese patients with Binge Eating Disorder (BED). Two-hundred seventeen (N = 217) consecutive, treatment-seeking, obese patients with BED were assessed with the Eating Disorder Examination (EDE). Nibbling frequency was examined in relation to current weight, eating disorder psychopathology and eating patterns. Results found that nibbling/picking was not related to body mass index, objective bulimic, subjective bulimic, or overeating episodes, food avoidance, sensitivity to weight gain, or any subscales of the EDE. However, nibbling/picking was significantly related to frequency of morning and afternoon snacking (r = .21, p = .002; r = .27, p < .001). The assessment of nibbling/picking behaviors among individuals with BED might not provide clinically significant information. © 2013.

Tunable Schottky diodes fabricated from crossed electrospun SnO{sub 2}/PEDOT-PSSA nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Carrasquillo, Katherine V. [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico)

2012-06-25

Graphical abstract: Crossed SnO{sub 2}/PEDOT-PSSA nanoribbon Schottky diodes. Highlight: Black-Right-Pointing-Pointer An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. Black-Right-Pointing-Pointer Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. Black-Right-Pointing-Pointer This makes it useful as a gas and light sensor. Black-Right-Pointing-Pointer In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. Black-Right-Pointing-Pointer A half wave rectifier has been demonstrated with this device under UV illumination. - Abstract: Schottky diodes have been fabricated on doped Si/SiO{sub 2} substrates in air, by simply crossing individual electrospun tin oxide (SnO{sub 2}) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was {approx}6 S/cm with no observable field effect, while SnO{sub 2} exhibited n-doped field effect behavior with a charge mobility of {approx}3.1 cm{sup 2}/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.

Lysosomal and Mitochondrial Liaisons in Niemann-Pick Disease

Directory of Open Access Journals (Sweden)

Sandra Torres

2017-11-01

Full Text Available Lysosomal storage disorders (LSD are characterized by the accumulation of diverse lipid species in lysosomes. Niemann-Pick type A/B (NPA/B and type C diseases Niemann-Pick type C (NPC are progressive LSD caused by loss of function of distinct lysosomal-residing proteins, acid sphingomyelinase and NPC1, respectively. While the primary cause of these diseases differs, both share common biochemical features, including the accumulation of sphingolipids and cholesterol, predominantly in endolysosomes. Besides these alterations in lysosomal homeostasis and function due to accumulation of specific lipid species, the lysosomal functional defects can have far-reaching consequences, disrupting intracellular trafficking of sterols, lipids and calcium through membrane contact sites (MCS of apposed compartments. Although MCS between endoplasmic reticulum and mitochondria have been well studied and characterized in different contexts, emerging evidence indicates that lysosomes also exhibit close proximity with mitochondria, which translates in their mutual functional regulation. Indeed, as best illustrated in NPC disease, alterations in the lysosomal-mitochondrial liaisons underlie the secondary accumulation of specific lipids, such as cholesterol in mitochondria, resulting in mitochondrial dysfunction and defective antioxidant defense, which contribute to disease progression. Thus, a better understanding of the lysosomal and mitochondrial interactions and trafficking may identify novel targets for the treatment of Niemann-Pick disease.

Fabrication and characterization of Au/n-CdTe Schottky barrier under illumination and dark

Science.gov (United States)

Bera, Swades Ranjan; Saha, Satyajit

2018-04-01

CdTe nanoparticles have been grown by chemical reduction method using EDA as capping agent. These are used to fabricate Schottky barrier in a simple cost-effective way at room temperature. The grown nanoparticles are structurally characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM). The optical properties of nano CdTe is characterized by UV-Vis absorption spectra, PL spectra. The band gap of the CdTe nanoparticles is increased as compared to CdTe bulk form indicating there is blue shift. The increase of band gap is due to quantum confinement. Photoluminescence spectra shows peak which corresponds to emission from surface state. CdTe nanofilm is grown on ITO coated glass substrate by dipping it on toluene containing dispersed CdTe nanoparticles. Schottky barrier of Au/n-CdTe is fabricated on ITO coated glass by vacuum deposition of gold. I- V and C- V characteristics of Au/n-CdTe Schottky barrier junction have been studied under dark and light condition. It is found that these characteristics are influenced by surface or interface traps. The values of barrier height, ideality factor, donor concentration and series resistance are obtained from the reverse bias capacitance-voltage measurements.

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

Science.gov (United States)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

International Nuclear Information System (INIS)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M.; Koeck, Franz A. M.; Nemanich, Robert J.

2016-01-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco ® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Science.gov (United States)

Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

2016-06-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Energy Technology Data Exchange (ETDEWEB)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

Science.gov (United States)

Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

2014-04-24

A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical characterization of organic-on-inorganic semiconductor Schottky structures

International Nuclear Information System (INIS)

Guellue, Oe; Tueruet, A; Asubay, S

2008-01-01

We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Φ b ) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I-V characteristics. It was seen that the value of 1.11 eV obtained for Φ b for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Φ b by influencing the space charge region of InP

Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer

International Nuclear Information System (INIS)

Güllü, Ö.; Aydoğan, S.; Türüt, A.

2012-01-01

In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal–semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current–voltage (I–V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I–V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

International Nuclear Information System (INIS)

Wang Yongshun; Rui Li; Adnan Ghaffar; Wang Zaixing; Liu Chunjuan

2015-01-01

In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6–11.4 μm and (2.2–2.4) × 10 15 cm −3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C, that is 50 °C higher than that of the traditional one; the reverse voltage capacity V R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μA and the forward conduction voltage drop is V F = 0.71 V at forward current I F = 3 A. (semiconductor devices)

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

International Nuclear Information System (INIS)

Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi; Fan Zhong-Chao; Yang Fu-Hua

2013-01-01

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm 2 with a total active area of 2.46 × 10 −3 cm 2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10 −5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The effects of temperature on Schottky diode barrier height and evidence of multiple barrier

International Nuclear Information System (INIS)

Rabah, K.V.O.

1994-07-01

Experimental study of Capacitance-Voltage-Temperature (C-V-T) plots, Current-Voltage-Temperature (I-V-T) characteristics have been undertaken in order to determine the height of the Schottky barrier. The results of the barrier height obtained by the above two methods were found to differ as well as vary with temperature change. In view of this discrepancy in barrier height values, two further experiments were performed: one on activation energy (I-T) plots and the other on pulsed (I-V-T) characteristics, and the results were found to show a similar trend. The Schottky diode studied was a 30CP040. (author). 23 refs, 9 figs, 3 tabs

Psychosocial dysfunction associated with skin picking disorder and trichotillomania

DEFF Research Database (Denmark)

Grant, Jon E.; Redden, Sarah A.; Leppink, Eric W.

2016-01-01

Skin picking disorder (SPD) and trichotillomania (TTM) are common and oftentimes disabling disorders. 125 Participants with SPD and 152 with TTM undertook clinical and neurocognitive evaluation, and were grouped according to mild, moderate, or severe levels of psychosocial dysfunction. Relationsh......Skin picking disorder (SPD) and trichotillomania (TTM) are common and oftentimes disabling disorders. 125 Participants with SPD and 152 with TTM undertook clinical and neurocognitive evaluation, and were grouped according to mild, moderate, or severe levels of psychosocial dysfunction...... that levels of self-reported psychosocial dysfunction have a strong association with specific clinical aspects of SPD and TTM....

An Integrated Inventory-Transportation System with Periodic Pick-Ups and Leveled Replenishment

Directory of Open Access Journals (Sweden)

Thomas Volling

2013-11-01

Full Text Available In this paper we develop a combined inventory-transportation system. The general idea is to integrate a simple replenishment policy with a routing component to derive operationally consistent standard routes as a basis for milk run design. The most interesting feature of the approach is that we combine stochastic vehicle routing with a replenishment policy which makes use of inventory to level the variability propagated into transportation operations. To evaluate the approach, we compare its performance with stochastic vehicle routing as well as sequential vehicle routing and replenishment planning. With respect to these approaches, substantial gains are achieved.

Arrival-time picking method based on approximate negentropy for microseismic data

Science.gov (United States)

Li, Yue; Ni, Zhuo; Tian, Yanan

2018-05-01

Accurate and dependable picking of the first arrival time for microseismic data is an important part in microseismic monitoring, which directly affects analysis results of post-processing. This paper presents a new method based on approximate negentropy (AN) theory for microseismic arrival time picking in condition of much lower signal-to-noise ratio (SNR). According to the differences in information characteristics between microseismic data and random noise, an appropriate approximation of negentropy function is selected to minimize the effect of SNR. At the same time, a weighted function of the differences between maximum and minimum value of AN spectrum curve is designed to obtain a proper threshold function. In this way, the region of signal and noise is distinguished to pick the first arrival time accurately. To demonstrate the effectiveness of AN method, we make many experiments on a series of synthetic data with different SNR from -1 dB to -12 dB and compare it with previously published Akaike information criterion (AIC) and short/long time average ratio (STA/LTA) methods. Experimental results indicate that these three methods can achieve well picking effect when SNR is from -1 dB to -8 dB. However, when SNR is as low as -8 dB to -12 dB, the proposed AN method yields more accurate and stable picking result than AIC and STA/LTA methods. Furthermore, the application results of real three-component microseismic data also show that the new method is superior to the other two methods in accuracy and stability.

Herbert L. Pick Jr. (1930-2012).

Science.gov (United States)

Rieser, John J; Lockman, Jeffrey J

2013-01-01

Presents an obituary for Herbert L. Pick Jr. For 49 years at the University of Minnesota's Institute of Child Development, new students were often greeted by an unassuming guy who rode to work on his bike, helped them carry boxes of books to their offices, and turned out to be a famous professor. Herbert L. Pick Jr. was a fabulous mentor, teacher, and developmental scientist. His work on perception and perceptual development spanned basic and applied science, laboratory and real-world settings. He was honored with the Division 7 (Developmental Psychology) Mentor Award from the American Psychological Association in 1998. He was honored again in 2002, jointly with his wife Anne D. Pick, with a volume of the Minnesota Symposium on Child Psychology based on a central theme of their work and titled "Action as an Organizer of Learning and Development." Two weeks before his death he was honored yet again with a Festschrift titled "Realism to Relevance: An Ecological Approach to Perception, Action and Cognition." Former students and academic admirers gave talks focused on the scientific themes Herb championed, namely, effects of experience on learning and development, organism-environment fit, environmental structure, and societal applications of research about basic psychological processes. He gave the final talk, and after thanking everyone in his typically humble way, he discussed his new research on visual-locomotor coordination. Herb died on June 18, 2012. He is greatly missed by Anne, his wife of 50 years; his sister Barbara; his daughters (and their husbands) Cindy (Jon), Karen (John), and Gretchen (Michael); and his grandchildren Alex, Ted, Katy, Joe, Eva, Sam, Rowan, and Culley. He is also missed by his many students, colleagues, friends, and admirers.

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Science.gov (United States)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

International Nuclear Information System (INIS)

Rahmani, Faezeh; Khosravinia, Hossein

2016-01-01

Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm 2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm −2 of Nickle-63 ( 63 Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure. - Highlights: • Silicon parameters were studied in betavoltaic batteries. • Studied betavoltaic batteries include p-n and Schottky barrier structures. • The p-n structure has higher conversion efficiency.

Simulation of electrical characteristics of GaN vertical Schottky diodes

Science.gov (United States)

Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej

2016-12-01

Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

International Nuclear Information System (INIS)

Kim, Jihyun; Ren, F.; Chung, G.Y.; MacMillan, M.F.; Baca, A.G.; Briggs, R.D.; Schoenfeld, D.; Pearton, S.J.

2004-01-01

SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi X or Ni rectifying contacts were irradiated with Co-60 γ-rays to doses up to ∼315 Mrad. The Ni/SiC rectifiers show severe reaction of the contact after irradiation at the highest dose, badly degrading the forward current characteristics and increasing the on-state resistance by up to a factor of 6 after irradiation. By sharp contrast, the WSi X /SiC devices show little deterioration of the contact with the same conditions and changes in on-state resistance of X contacts appear promising for applications requiring improved contact stability

Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

International Nuclear Information System (INIS)

Chen Fengping; Zhang Yuming; Lue Hongliang; Zhang Yimen; Guo Hui; Guo Xin

2011-01-01

4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. (semiconductor devices)

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

Science.gov (United States)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

2018-04-01

The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

Science.gov (United States)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Plasmonic silicon Schottky photodetectors: the physics behind graphene enhanced internal photoemission

DEFF Research Database (Denmark)

Levy, Uriel; Grajower, Meir; Gonçalves, P. A. D.

2017-01-01

a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor...

Peripheral neuropathy in type A Niemann-Pick disease. A morphological study.

Science.gov (United States)

Landrieu, P; Saïd, G

1984-01-01

A black boy had a severe neuropathic form of Niemann-Pick disease (NPD) with a pronounced sphingomyelinase deficiency in the fibroblasts. Nerve conduction velocities were diminished, and a nerve biopsy was performed. Isolated fibers showed segmental demyelination and numerous dense bodies in the Schwann cells (SC). Electron microscopy revealed two categories of inclusions: the first was made up of lysosomal inclusions usually described in NPD. The second comprised myelin inclusions--sometimes still connected to the original myelin sheath--indicating severe myelinopathy. Both myelin debris and NPD inclusions were found in axoplasms and probably came from SC cytoplasm through axolemma lesions. NPD is a unique example of myelinopathy due to sphingomyelinase deficiency.

Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

International Nuclear Information System (INIS)

Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

2015-01-01

We report the current–voltage (I–V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I–V characteristic in the temperature range of 280–400 K. This is to study the effect of temperature on the I–V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A * was 10.32 A·cm −2 ·K −2 , which is close to the theoretical value of 9.4 A·cm −2 ·K −2 for n-InP. The temperature dependence of the I–V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I–V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP. (paper)

Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

Science.gov (United States)

Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

2015-12-01

We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

Science.gov (United States)

Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

2016-06-22

Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

Science.gov (United States)

Čermák, Jan; Koide, Yasuo; Takeuchi, Daisuke; Rezek, Bohuslav

2014-02-01

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

Niemann-Pick disease, type B with TRAP-positive storage cells and secondary sea blue histiocytosis

Directory of Open Access Journals (Sweden)

R. Saxena

2009-09-01

Full Text Available We present 2 cases of Niemann Pick disease, type B with secondary sea-blue histiocytosis. Strikingly, in both cases the Pick cells were positive for tartrate resistant acid phosphatase, a finding hitherto described only in Gaucher cells. This report highlights the importance of this finding as a potential cytochemical diagnostic pitfall in the diagnosis of Niemann Pick disease.

Simulations about self-absorption of tritium in titanium tritide and the energy deposition in a silicon Schottky barrier diode

International Nuclear Information System (INIS)

Li, Hao; Liu, Yebing; Hu, Rui; Yang, Yuqing; Wang, Guanquan; Zhong, Zhengkun; Luo, Shunzhong

2012-01-01

Simulations on the self-absorption of tritium electrons in titanium tritide films and the energy deposition in a silicon Schottky barrier diode are carried out using the Geant4 radiation transport toolkit. Energy consumed in each part of the Schottky radiovoltaic battery is simulated to give a clue about how to make the battery work better. The power and energy-conversion efficiency of the tritium silicon Schottky radiovoltaic battery in an optimized design are simulated. Good consistency with experiments is obtained. - Highlights: ► Simulation of the energy conversion inside the radiovoltaic battery is carried out. ► Energy-conversion efficiency in the simulation shows good consistency with experimental result. ► Inadequacy of the present configuration is studied in this work and improvements are proposed.

Integration of organic based Schottky junctions for crossbar non-volatile memory applications

DEFF Research Database (Denmark)

Katsia, E.; Tallarida, G.; Ferrari, S.

2008-01-01

Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current...

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

2013-01-01

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong

2013-09-26

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

OpenAIRE

Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

2015-01-01

We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is ...

RESONANT BPM FOR CONTINUOUS TUNE MEASUREMENT IN RHIC

International Nuclear Information System (INIS)

KESSELMAN, M.; CAMERON, P.; CUPOLO, J.

2001-01-01

A movable Beam Position Monitor (BPM) using shorted stripline Pick-Up Electrode (NE) elements has been resonated using matching stub techniques to achieve a relatively high Q resonance at about 230MHz. This PUE has been used in a feasibility study of phase-locked-loop tune measurement [1], using a lock-in amplifier and variable frequency generator to continuously track betatron tune in RHIC, as well as to observe Schottky signals of the Gold beam. The approach to providing a high Q PUE for difference mode signals, simulation studies, and the results of initial tests will be presented

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

Science.gov (United States)

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

International Nuclear Information System (INIS)

Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

2014-01-01

Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

Directory of Open Access Journals (Sweden)

Sangeeta Singh

2016-03-01

Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

Indian Academy of Sciences (India)

Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

Enhanced Schottky signals from electron-cooled, coasting beams in a heavy-ion storage ring

Energy Technology Data Exchange (ETDEWEB)

Krantz, C., E-mail: claude.krantz@mpi-hd.mpg.d [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Blaum, K.; Grieser, M. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Litvinov, Yu.A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Planckstrasse 1, D-64291 Darmstadt (Germany); Repnow, R.; Wolf, A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany)

2011-02-11

Measurements at the Test Storage Ring of the Max-Planck-Institut fuer Kernphysik in Heidelberg (Germany) have shown that the signal amplitude induced in a Schottky-noise pickup electrode by a coasting electron-cooled ion beam can be greatly enhanced by exposure of the latter to a perturbing radiofrequency signal which is detuned from the true beam revolution frequency. The centre frequencies obtained from harmonic analysis of the observed pickup signal closely follow those imposed on the ions by the electron cooling force. The phenomenon can be exploited to measure the true revolution frequency of ion beams of very low intensity, whose pure Schottky noise is too weak to be measurable under normal circumstances.

Olfactory deficits in Niemann-Pick type C1 (NPC1 disease.

Directory of Open Access Journals (Sweden)

Marina Hovakimyan

Full Text Available BACKGROUND: Niemann-Pick type C disease (NPC is a rare autosomal recessive lipid storage disease characterized by progressive neurodegeneration. As only a few studies have been conducted on the impact of NPC on sensory systems, we used a mutant mouse model (NPC1(-/- to examine the effects of this disorder to morphologically distinct regions of the olfactory system, namely the olfactory epithelium (OE and olfactory bulb (OB. METHODOLOGY/PRINCIPAL FINDINGS: For structural and functional analysis immunohistochemistry, electron microscopy, western blotting, and electrophysiology have been applied. For histochemistry and western blotting, we used antibodies against a series of neuronal and glia marker proteins, as well as macrophage markers. NPC1(-/- animals present myelin-like lysosomal deposits in virtually all types of cells of the peripheral and central olfactory system. Especially supporting cells of the OE and central glia cells are affected, resulting in pronounced astrocytosis and microgliosis in the OB and other olfactory cortices. Up-regulation of Galectin-3, Cathepsin D and GFAP in the cortical layers of the OB underlines the critical role and location of the OB as a possible entrance gate for noxious substances. Unmyelinated olfactory afferents of the lamina propria seem less affected than ensheathing cells. Supporting the structural findings, electro-olfactometry of the olfactory mucosa suggests that NPC1(-/- animals exhibit olfactory and trigeminal deficits. CONCLUSIONS/SIGNIFICANCE: Our data demonstrate a pronounced neurodegeneration and glia activation in the olfactory system of NPC1(-/-, which is accompanied by sensory deficits.

Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J. [Electrical Communication Engineering, Indian Institute of Science, Bangalore, India 560012 (India); Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore, India 560012 (India)

2015-09-15

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

Schottky-contact plasmonic rectenna for biosensing

Science.gov (United States)

Alavirad, Mohammad; Siadat Mousavi, Saba; Roy, Langis; Berini, Pierre

2013-10-01

We propose a plasmonic gold nanodipole array on silicon, forming a Schottky contact thereon, and covered by water. The behavior of this array under normal excitation has been extensively investigated. Trends have been found and confirmed by identification of the mode propagating in nanodipoles and its properties. This device can be used to detect infrared radiation below the bandgap energy of the substrate via internal photoelectric effect (IPE). Also we estimate its responsivity and detection limit. Finally, we assess the potential of the structure for bulk and surface (bio) chemical sensing. Based on modal results an analytical model has been proposed to estimate the sensitivity of the device. Results show a good agreement between numerical and analytical interpretations.

Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

2014-07-14

β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

Frequency and voltage dependent electrical responses of poly(triarylamine thin film-based organic Schottky diode

Directory of Open Access Journals (Sweden)

Mohamad Khairul Anuar

2017-01-01

Full Text Available A metal-organic-metal (MOM type Schottky diode based on poly (triarylamine (PTAA thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f and capacitance-voltage (C-V-f characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit. Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz but decreases at high frequency (1 – 10 kHz. The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV−1cm−2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC signal.

RF fields due to Schottky noise in a coasting particle beam

CERN Document Server

Faltin, L

1977-01-01

The RF fields inside a rectangular chamber excited by the Schottky noise current inherently present in a coasting particle beam are calculated, using a simple beam model. Vertical betatron oscillations are assumed. The power flow accompanying the beam is given as well as the resulting characteristic impedance. Numerical results are presented.

Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Ahmadi, Elaheh; Oshima, Yuichi; Wu, Feng; Speck, James S.

2017-03-01

Coherent β-(AlxGa1-x)2O3 films (x = 0, 0.038, 0.084, 0.164) were grown successfully on a Sn-doped β-Ga2O3 (010) substrate using plasma-assisted molecular beam epitaxy. Atom probe tomography, transmission electron microscopy, and high resolution x-ray diffraction were used to verify the alloy composition and high quality of the films. Schottky diodes were then fabricated using Ni as the Schottky metal. Capacitance-voltage measurements revealed a very low (current-voltage (I-V) measurements performed at temperatures varying from 300 K to 500 K on the Schottky diodes. These measurements revealed that the apparent Schottky barrier height could have similar values for different compositions of β-(AlxGa1-x)2O3. We believe this is attributed to the lateral fluctuation in the alloy’s composition. This results in a lateral variation in the barrier height. Therefore, the average Schottky barrier height extracted from I-V measurements could be similar for β-(AlxGa1-x)2O3 films with different compositions.

Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

Czech Academy of Sciences Publication Activity Database

Grym, Jan; Yatskiv, Roman

2013-01-01

Roč. 28, č. 4 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

Understanding Human Hand Gestures for Learning Robot Pick-and-Place Tasks

Directory of Open Access Journals (Sweden)

Hsien-I Lin

2015-05-01

Full Text Available Programming robots by human demonstration is an intuitive approach, especially by gestures. Because robot pick-and-place tasks are widely used in industrial factories, this paper proposes a framework to learn robot pick-and-place tasks by understanding human hand gestures. The proposed framework is composed of the module of gesture recognition and the module of robot behaviour control. For the module of gesture recognition, transport empty (TE, transport loaded (TL, grasp (G, and release (RL from Gilbreth's therbligs are the hand gestures to be recognized. A convolution neural network (CNN is adopted to recognize these gestures from a camera image. To achieve the robust performance, the skin model by a Gaussian mixture model (GMM is used to filter out non-skin colours of an image, and the calibration of position and orientation is applied to obtain the neutral hand pose before the training and testing of the CNN. For the module of robot behaviour control, the corresponding robot motion primitives to TE, TL, G, and RL, respectively, are implemented in the robot. To manage the primitives in the robot system, a behaviour-based programming platform based on the Extensible Agent Behavior Specification Language (XABSL is adopted. Because the XABSL provides the flexibility and re-usability of the robot primitives, the hand motion sequence from the module of gesture recognition can be easily used in the XABSL programming platform to implement the robot pick-and-place tasks. The experimental evaluation of seven subjects performing seven hand gestures showed that the average recognition rate was 95.96%. Moreover, by the XABSL programming platform, the experiment showed the cube-stacking task was easily programmed by human demonstration.

Operation and scalability of dopant-segregated Schottky barrier MOSFETs with recessed channels

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Hsia, Jui-Kai

2013-01-01

Recessed channels were used in scaled dopant-segregated Schottky barrier MOSFETs (DS-SBMOS) to control the severe short-channel effect. The physical operation and device scalability of the DS-SBMOS resulting from the presence of recessed channels and associated gate-corners are elucidated. The coupling of Schottky and gate-corner barriers has a key function in determining the on–off switching and drain current. The gate-corner barriers divide the channel into three regions for protection from the drain penetration field. To prevent resistive degradations in the drive current, an alternative asymmetric recessed channel (ARC) without a source-side gate-corner is proposed to simultaneously optimize both the short-channel effect and drive current in the scaled DS-SBMOS. By employing the proposed ARC architecture, the DS-SBMOS devices can be successfully scaled down, making them promising candidates for next-generation CMOS devices. (paper)

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

International Nuclear Information System (INIS)

Čermák, Jan; Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

2014-01-01

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

Energy Technology Data Exchange (ETDEWEB)

Čermák, Jan, E-mail: cermakj@fzu.cz; Rezek, Bohuslav [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague 6 (Czech Republic); Koide, Yasuo [Sensor Materials Center, National Institute for Material Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Takeuchi, Daisuke [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

2014-02-07

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

International Nuclear Information System (INIS)

Nakamura, W.; Tokuda, Y.; Ueda, H.; Kachi, T.

2006-01-01

Inductively coupled plasma-(ICP-)induced defects in n-type GaN have been studied from current-voltage (I-V) characteristics and deep-level transient spectroscopy (DLTS) for Schottky diodes fabricated on etched surfaces. The samples after ICP etching show the ohmic I-V characteristics. Schottky characteristics are obtained after annealing at 600 and 800 deg. C in N 2 , but are not restored to that of the control samples. DLTS shows that the effect of ICP etching is small on the region beyond 80 nm from the surface. These results suggest that there remain ICP-induced damage in the near-surface region after thermal annealing

Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode

International Nuclear Information System (INIS)

Qiao Dayong; Yuan Weizheng; Gao Peng; Yao Xianwang; Zang Bo; Zhang Lin; Guo Hui; Zhang Hongjian

2008-01-01

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device. (authors)

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

International Nuclear Information System (INIS)

Da-Yong, Qiao; Wei-Zheng, Yuan; Peng, Gao; Xian-Wang, Yao; Bo, Zang; Lin, Zhang; Hui, Guo; Hong-Jian, Zhang

2008-01-01

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device

Hydrogen Production on Ag-Pd/TiO2 Bimetallic Catalysts: Is there a Combined Effect of Surface Plasmon Resonance with Schottky Mechanism on the Photo-Catalytic Activity?

KAUST Repository

Nadeem, Muhammad A.; Al-Oufi, Maher; Wahab, Ahmed K.; Anjum, Dalaver H.; Idriss, Hicham

2017-01-01

Despite many observations that plasmonics can enhance photocatalytic reactions, their relative role in the overall reaction rate is not thoroughly investigated. Here we report that silver nanoparticles contribution in the reaction rate by its plasmonic effect is negligible when compared to that of Pd (Schottky effect). To conduct the study a series of Ag−Pd/TiO2 catalysts have been prepared, characterized and tested for H2 production from water in the presence of an organic sacrificial agent. Pd was chosen as a standard high work function metal needed for the Schottky junction to pump away electrons from the conduction band of the semiconductor and Ag (whose work function is ca. 1 eV lower than that of Pd) for its high plasmonic resonance response at the edge of the bandgap of TiO2. While H2 production rates showed linear dependency on plasmonic response of Ag in the Pd−Ag series, the system performed less than that of pure Pd. In other words, the plasmonic contribution of Ag in the Ag−Pd/TiO2 catalyst for hydrogen production, while confirmed using different excitation energies, is small. Therefore, the “possible” synergistic effect of plasmonic (in the case of Ag) and Schottky-mechanism (in the case of Pd) is minor when compared to that of Schottky-effect alone.

Hydrogen Production on Ag-Pd/TiO2 Bimetallic Catalysts: Is there a Combined Effect of Surface Plasmon Resonance with Schottky Mechanism on the Photo-Catalytic Activity?

KAUST Repository

Nadeem, Muhammad A.

2017-03-28

Despite many observations that plasmonics can enhance photocatalytic reactions, their relative role in the overall reaction rate is not thoroughly investigated. Here we report that silver nanoparticles contribution in the reaction rate by its plasmonic effect is negligible when compared to that of Pd (Schottky effect). To conduct the study a series of Ag−Pd/TiO2 catalysts have been prepared, characterized and tested for H2 production from water in the presence of an organic sacrificial agent. Pd was chosen as a standard high work function metal needed for the Schottky junction to pump away electrons from the conduction band of the semiconductor and Ag (whose work function is ca. 1 eV lower than that of Pd) for its high plasmonic resonance response at the edge of the bandgap of TiO2. While H2 production rates showed linear dependency on plasmonic response of Ag in the Pd−Ag series, the system performed less than that of pure Pd. In other words, the plasmonic contribution of Ag in the Ag−Pd/TiO2 catalyst for hydrogen production, while confirmed using different excitation energies, is small. Therefore, the “possible” synergistic effect of plasmonic (in the case of Ag) and Schottky-mechanism (in the case of Pd) is minor when compared to that of Schottky-effect alone.

75 FR 22423 - Pick-Sloan Missouri Basin Program, Eastern and Western Division Proposed Project Use Power Rate