WorldWideScience

Sample records for schottky betatron lines

  1. Betatron tune measurement

    International Nuclear Information System (INIS)

    Dinev, D.

    2001-01-01

    On the basis of the comparative review of the methods for the betatron tune measurement in cyclic accelerators of synchrotrons type, the research of these methods is carried out from the point of view of their applicability to Nuclotron. Both methods using measurement of the statistical fluctuations of the beam current (Schottky noise) and methods using coherent beam excitation have been discussed. The emphasis is on the final results of importance for the tune measurement practice. Signal processing is briefly discussed too

  2. SCHOTTKY MEASUREMENTS DURING RHIC 2000

    International Nuclear Information System (INIS)

    CAMERON, P.; CUPOLO, J.; DEGEN, C.; HAMMONS, L.; KESSELMAN, M.; LEE, R.; MEYER, A.; SIKORA, R.

    2001-01-01

    The 2GHz Schottky system was a powerful diagnostic during RHIC 2000 commissioning. A continuous monitor without beam excitation, it provided betatron tune, chromaticity, momentum spread relative emittance, and synchrotron tune. It was particularly useful during transition studies. In addition, a BPM was resonated at 230MHz for Schottky measurements

  3. Experimental results of the betatron sum resonance

    International Nuclear Information System (INIS)

    Wang, Y.; Ball, M.; Brabson, B.

    1993-06-01

    The experimental observations of motion near the betatron sum resonance, ν x + 2ν z = 13, are presented. A fast quadrupole (Panofsky-style ferrite picture-frame magnet with a pulsed power supplier) producing a betatron tune shift of the order of 0.03 at rise time of 1 μs was used. This quadrupole was used to produce betatron tunes which jumped past and then crossed back through a betatron sum resonance line. The beam response as function of initial betatron amplitudes were recorded turn by turn. The correlated growth of the action variables, J x and J z , was observed. The phase space plots in the resonance frame reveal the features of particle motion near the nonlinear sum resonance region

  4. Successful observation of Schottky signals at the Tevatron collider

    International Nuclear Information System (INIS)

    Goldberg, D.A.; Lambertson, G.R.

    1989-08-01

    We have constructed a Schottky detector for the Tevatron collider in the form of a high-Q (∼5000) cavity which operates at roughly 2 GHz, well above the frequency at which the Tevatron's single-bunch frequency spectrum begins to roll off. Initial spectra obtained from the detector show clearly observable Schottky betatron lines, free of coherent contaminants; also seen are the ''common-mode'' longitudinal signals due to the offset of the beam from the detector center. The latter signals indicate that at 2 GHz, the coherent single-bunch spectrum from the detector is reduced by >80 dB; therefore, in normal collider operation, the Schottky betatron lines are >40 dB greater than their coherent counterparts. We describe how the data we have obtained give information on transverse and longitudinal emittances, synchrotron frequency, and betatron tunes, as well as reveal what may be previously unobserved phenomena. Space limitations restrict us to presenting only as much data as should be necessary to convince even the skeptical reader of the validity of the claim made in the paper's title. 3 refs., 2 figs

  5. Transverse betatron tune measurements

    International Nuclear Information System (INIS)

    Serio, M.

    1989-01-01

    In this paper the concept of the betatron tune and the techniques to measure it are discussed. The smooth approximation is introduced along with the terminology of betatron oscillations, phase advance and tune. Single particle and beam spectra in the presence of synchro-betatron oscillations are treated with emphasis on the consequences of sampling the beam position. After a general presentation of various kinds of beam position monitors and transverse kickers, the time domain and frequency domain analysis of the beam response to a transverse excitation are discussed and several methods and applications of the tune measurements are listed

  6. On the Nodal Lines of Eisenstein Series on Schottky Surfaces

    Science.gov (United States)

    Jakobson, Dmitry; Naud, Frédéric

    2017-04-01

    On convex co-compact hyperbolic surfaces {X=Γ backslash H2}, we investigate the behavior of nodal curves of real valued Eisenstein series {F_λ(z,ξ)}, where {λ} is the spectral parameter, {ξ} the direction at infinity. Eisenstein series are (non-{L^2}) eigenfunctions of the Laplacian {Δ_X} satisfying {Δ_X F_λ=(1/4+λ^2)F_λ}. As {λ} goes to infinity (the high energy limit), we show that, for generic {ξ}, the number of intersections of nodal lines with any compact segment of geodesic grows like {λ}, up to multiplicative constants. Applications to the number of nodal domains inside the convex core of the surface are then derived.

  7. The tandem betatron accelerator

    International Nuclear Information System (INIS)

    Keinigs, R.

    1991-01-01

    This paper reports that the tandem betatron is a compact, high-current induction accelerator that has the capability to accelerate electrons to an energy of order one gigavolt. Based upon the operating principle of a conventional betatron, the tandem betatron employs two synchronized induction cores operating 180 degrees out of phase. Embedded within the cores are the vacuum chambers, and these are connected by linear transport sections to allow for moving the beam back and forth between the two betatrons. The 180 degree phase shift between the core fluxes permits the circumvention of the flux swing constraint that limits the maximum energy gain of a conventional betatron. By transporting the beam between the synchronized cores, an electron can access more than one acceleration cycle, and thereby continue to gain energy. This added degree of freedom also permits a significant decrease in the size of the magnet system. Biasing coils provide independent control of the confining magnetic field. Provided that efficient beam switching can be performed, it appears feasible that a one gigavolt electron beam can be generated and confined. At this energy, a high current electron beam circulating in a one meter radius orbit could provide a very intense source of short wavelength (λ < 10 nm) synchrotron radiation. This has direct application to the emerging field of x-ray lithography. At more modest energies (10 MeV-30 MEV) a compact tandem betatron could be employed in the fields of medical radiation therapy, industrial radiography, and materials processing

  8. Schottky signal analysis: tune and chromaticity computation

    CERN Document Server

    Chanon, Ondine

    2016-01-01

    Schottky monitors are used to determine important beam parameters in a non-destructive way. The Schottky signal is due to the internal statistical fluctuations of the particles inside the beam. In this report, after explaining the different components of a Schottky signal, an algorithm to compute the betatron tune is presented, followed by some ideas to compute machine chromaticity. The tests have been performed with offline and/or online LHC data.

  9. A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

    International Nuclear Information System (INIS)

    Dong Jun-Rong; Yang Hao; Tian Chao; Huang Jie; Zhang Hai-Ying

    2012-01-01

    The left-handed nonlinear transmission line (LH-NLTL) based on monolithic microwave integrated circuit (MMIC) technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode (PSVD) is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39.6 GHz LH-NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Betatrons with kiloampere beams

    International Nuclear Information System (INIS)

    Peterson, J.M.

    1982-11-01

    Although the magnetic-induction method of acceleration used in the betatron is inherently capable of accelerating intense particle beams to high energy, many beam-instability questions arise when beams in the kilo-ampere range are considered. The intense electromagnetic fields produced by the beam, and by the image currents and charges induced in the surrounding walls, can produce very disruptive effects. Several unstable modes of collective oscillation are possible; the suppression of any one of them usually involves energy spread for Landau damping and careful design of the electrical character of the vacuum chamber. The various design criteria are often mutually incompatible. Space-charge detuning can be severe unless large beam apertures and high-energy injection are used. In order to have an acceptably low degree of space-charge detuning in the acceleration of a 10-kilo-ampere electron beam, for example, an injection energy on the order of 50 MeV seems necessary, in which case the forces due to nearby wall images can have a larger effect than the internal forces of the beam. A method of image compensation was invented for reducing the net image forces; it serves also to decrease the longitudinal beam impedance and thus helps alleviate the longitudinal instability as well. In order to avoid the ion-electron collective instability a vacuum in the range of 10 - 8 torr is required for an acceleration time of 1 millisecond. A multi-ring betatron system using the 50-MeV Advanced Test Accelerator at LLNL as an injector was conceptually designed

  11. Betatron activation analysis of cupriferous flotation pulp

    International Nuclear Information System (INIS)

    Kaminski, R.; Matenko, J.; Mencel, J.; Janiczek, J.; Kielsznia, J.

    1974-01-01

    A method of copper determination in cupriferous flotation pulp by photo-activation analysis using betatron and another equipments of existent ''analytical line'' intended for copper determination in dry samples has been described. An activation has been achieved with 14.9 MeV γ-photons. The excitation activity was investigated by using two scintillation detectors and a fast coincidence circuit with resolution time 80 ns. The precision of method was determined as +- 4.25% in 0.95 confidence level for pulp with concentration 5% Cu and +- 24% for 0.06% Cu. (author)

  12. High current betatron research at the University of New Mexico

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Len, L.K.

    1987-01-01

    Betatrons are among the simplest of high energy accelerators. Their circuit is equivalent to a step-up transformer; the electron beam forms a multi-turn secondary winding. Circulation of the beam around the flux core allows generation of high energy electrons with relatively small core mass. As with any transformer, a betatron is energy inefficient at low beam current; the energy balance is dominated by core losses. This fact has prompted a continuing investigation of high current betatrons as efficient, compact sources of beta and gamma radiation. A program has been supported at the University of New Mexico by the Office of Naval Research to study the physics of high current electron beams in circular accelerators and to develop practical technology for high power betatrons. Fabrication and assembly of the main ring was completed in January of this year. In contrast to other recent high current betatron experiments the UNM device utilizes a periodic focusing system to contain high current beams during the low energy phase of the acceleration cycle. The reversing cusp fields generated by alternating polarity solenoidal lenses cancel beam drift motions induced by machine errors. In consequence, they have found that the cusp geometry has had significantly better stability properties than a monodirectional toroidal field. In comparison to other minimum-Β geometries such as the Stelllatron cusps have open field lines which facilitate beam injection and neutralization

  13. Dispersion and betatron matching into the linac

    International Nuclear Information System (INIS)

    Decker, F.J.; Adolphsen, C.; Corbett, W.J.; Emma, P.; Hsu, I.; Moshammer, H.; Seeman, J.T.; Spence, W.L.

    1991-05-01

    In high energy linear colliders, the low emittance beam from a damping ring has to be preserved all the way to the linac, in the linac and to the interaction point. In particular, the Ring-To-Linac (RTL) section of the SLAC Linear Collider (SLC) should provide an exact betatron and dispersion match from the damping ring to the linac. A beam with a non-zero dispersion shows up immediately as an increased emittance, while with a betatron mismatch the beam filaments in the linac. Experimental tests and tuning procedures have shown that the linearized beta matching algorithms are insufficient if the actual transport line has some unknown errors not included in the model. Also, adjusting quadrupole strengths steers the beam if it is offset in the quadrupole magnets. These and other effects have lead to a lengthy tuning process, which in the end improves the matching, but is not optimal. Different ideas will be discussed which should improve this matching procedure and make it a more reliable, faster and simpler process. 5 refs., 2 figs

  14. Energy measurements from betatron oscillations

    International Nuclear Information System (INIS)

    Himel, T.; Thompson, K.

    1989-03-01

    In the Stanford Linear Collider the electron beam is accelerated from 1--50 GeV in a distance of 3 km. The energy is measured and corrected at the end with an energy feedback loop. There are no bends within the linear accelerator itself, so no intermediate energy measurements are made. Errors in the energy profile due to mis-phasing of the rf, or due to calibration errors in the klystrons' rf outputs are difficult to detect. As the total betatron phase advance down the accelerator is about 30 /times/ 2π, an energy error of a few percent can cause a large error in the total phase advance. This in turn degrades the performance of auto-steering programs. We have developed a diagnostic program which generates and measures several betatron oscillations in the accelerator. It then analyzes this oscillation, looking for frequency changes which indicate energy errors. One can then compensate for or correct these energy errors. 6 refs., 1 fig

  15. Betatron phase advance measurement at SPEAR

    International Nuclear Information System (INIS)

    Morton, P.L.; Pellegrin, J.L.; Raubenheimer, T.; Ross, M.

    1987-02-01

    There are many reasons to determine the betatron phase advance between two azimuthal positions in a circular accelerator or storage ring. We have measured the betatron phase advance between various pairs of azimuthal points in the SPEAR Storage Ring by two different methods. The first method is to excite a steady state coherent betatron oscillation with a network analyzer. The second method is to excite a free coherent betatron oscillation with an impulse kick, and to digitally sample the transverse position of the beam at the pickup stations. The results of these digital samples are Fourier analyzed with a computer to obtain the phase advance. The second method is discussed, and the experimental results compared to theory

  16. Betatron phase advance measurement at SPEAR

    International Nuclear Information System (INIS)

    Morton, P.L.; Pellegrin, J.L.; Raubenheimer, T.; Ross, M.

    1987-01-01

    There are many reasons to determine the betatron phase advance between two azimuthal positions in a circular accelerator or storage ring. The authors measured the betatron phase advance between various pairs of azimuthal points in the SPEAR Storage Ring by two different methods. The first method is to excite a steady state coherent betatron oscillation with a network analyzer. The second method is to excite a free coherent betatron oscillation with an impulse kick, and to digitally sample the transverse position of the beam at the pickup stations. The results of these digital samples are Fourier analyzed with a computer to obtain the phase advance. The second method is discussed, and the experimental results compared to theory

  17. Betatron tune correction schemes in nuclotron

    International Nuclear Information System (INIS)

    Shchepunov, V.A.

    1992-01-01

    Algorithms of the betatron tune corrections in Nuclotron with sextupolar and octupolar magnets are considered. Second order effects caused by chromaticity correctors are taken into account and sextupolar compensation schemes are proposed to suppress them. 6 refs.; 1 tab

  18. RF fields due to Schottky noise in a coasting particle beam

    CERN Document Server

    Faltin, L

    1977-01-01

    The RF fields inside a rectangular chamber excited by the Schottky noise current inherently present in a coasting particle beam are calculated, using a simple beam model. Vertical betatron oscillations are assumed. The power flow accompanying the beam is given as well as the resulting characteristic impedance. Numerical results are presented.

  19. Synchro-betatron resonance excitation in LEP

    International Nuclear Information System (INIS)

    Myers, S.

    1987-01-01

    The excitation of synchrotro-betatron resonances due to spurious dispersion and induced transverse deflecting fields at the RF cavities has been simulated for the LEP storage ring. These simulations have been performed for various possible modes of operation. In particular, a scenario has been studied in which LEP is operated at the maximum possible value of the synchrotron tune throughout the acceleration cycle, in an attempt to maximise the threshold intensity at which the Transverse Mode Coupling Instability (TMCI) occurs. This mode of operation necessitates the crossing of synchro-betatron resonances at some points in the acceleration cycle if low order non-linear machine resonances are to be avoided. Simulations have been performed in which the machine tune is swept across these synchro-betratron resonances at a rate given by the bandwidth of the magnet plus power supply circuits of the main quadrupole chain. The effect of longitudinal and transverse wake-fields on the excitation of these resonances has been investigated. These studies indicate that the distortion of the RF potential well caused by the longitudinal wake fields increases the non-linear content of the synchrotron motion and consequently increases significantly the excitation of the higher order synchro-betatron resonances

  20. Modified betatron for ion beam fusion

    International Nuclear Information System (INIS)

    Rostoker, N.; Fisher, A.

    1986-01-01

    An intense neutralized ion beam can be injected and trapped in magnetic mirror or tokamak geometry. The details of the process involve beam polarization so that the beam crosses the fringing fields without deflection and draining the polarization when the beam reaches the plasma. Equilibrium requires that a large betatron field be added in tokamak geometry. In mirror geometry a toroidal field must be added by means of a current along the mirror axis. In either case, the geometry becomes that of the modified betatron which has been studied experimentally and theoretically in recent years. We consider beams of d and t ions with a mean energy of 500 kev and a temperature of about 50 kev. The plasma may be a proton plasma with cold ions. It is only necessary for beam trapping or to carry currents. The ion energy for slowing down is initially 500 kev and thermonuclear reactions depend only on the beam temperature of 50 kev which changes very slowly. This new configuration for magnetic confinement fusion leads to an energy gain of 10--20 for d-t reactions whereas previous studies of beam target interaction predicted a maximum energy gain of 3--4. The high beam energy available with pulsed ion diode technology is also essential for advanced fuels. 16 refs., 3 figs

  1. Betatron coupling: Merging Hamiltonian and matrix approaches

    Directory of Open Access Journals (Sweden)

    R. Calaga

    2005-03-01

    Full Text Available Betatron coupling is usually analyzed using either matrix formalism or Hamiltonian perturbation theory. The latter is less exact but provides a better physical insight. In this paper direct relations are derived between the two formalisms. This makes it possible to interpret the matrix approach in terms of resonances, as well as use results of both formalisms indistinctly. An approach to measure the complete coupling matrix and its determinant from turn-by-turn data is presented. Simulations using methodical accelerator design MAD-X, an accelerator design and tracking program, were performed to validate the relations and understand the scope of their application to real accelerators such as the Relativistic Heavy Ion Collider.

  2. Correction of dispersion and the betatron functions in the CEBAF accelerator

    International Nuclear Information System (INIS)

    Lebedev, V.A.; Bickley, M.; Schaffner, S.; Zeijts, J. van; Krafft, G.A.; Watson, C.

    1996-01-01

    During the commissioning of the CEBAF accelerator, correction of dispersion and momentum compaction, and, to a lesser extent, transverse transfer matrices were essential for robust operation. With changing machine conditions, repeated correction was found necessary. To speed the diagnostic process the authors developed a method which allows one to rapidly track the machine optics. The method is based on measuring the propagation of 30 Hz modulated betatron oscillations downstream of a point of perturbation. Compared to the usual methods of dispersion or difference orbit measurement, synchronous detection of the beam displacement, as measured by beam position monitors, offers significantly improved speed and accuracy of the measurements. The beam optics of the accelerator was altered to decrease lattice sensitivity at critical points and to simplify control of the betatron function match. The calculation of the Courant-Snyder invariant from signals of each pair of nearby beam position monitors has allowed one to perform on-line measurement and correction of the lattice properties

  3. The effects of betatron motion on the preservation of FEL microbunching

    Energy Technology Data Exchange (ETDEWEB)

    Geloni, Gianluca [European XFEL GmbH, Hamburg (Germany); Kocharyan, Vitali; Saldin, Evgeni [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

    2011-05-15

    In some options for circular polarization control at X-ray FELs, a helical radiator is placed a few ten meters distance behind the baseline undulator. If the microbunch structure induced in the baseline (planar) undulator can be preserved, intense coherent radiation is emitted in the helical radiator. The effects of betatron motion on the preservation of micro bunching in such in-line schemes should be accounting for. In this paper we present a comprehensive study of these effects. It is shown that one can work out an analytical expression for the debunching of an electron beam moving in a FODO lattice, strictly valid in the asymptote for a FODO cell much shorter than the betatron function. Further on, numerical studies can be used to demonstrate that the validity of such analytical expression goes beyond the abovementioned asymptote, and can be used in much more a general context. Finally, a comparison with Genesis simulations is given. (orig.)

  4. The effects of betatron motion on the preservation of FEL microbunching

    International Nuclear Information System (INIS)

    Geloni, Gianluca; Kocharyan, Vitali; Saldin, Evgeni

    2011-05-01

    In some options for circular polarization control at X-ray FELs, a helical radiator is placed a few ten meters distance behind the baseline undulator. If the microbunch structure induced in the baseline (planar) undulator can be preserved, intense coherent radiation is emitted in the helical radiator. The effects of betatron motion on the preservation of micro bunching in such in-line schemes should be accounting for. In this paper we present a comprehensive study of these effects. It is shown that one can work out an analytical expression for the debunching of an electron beam moving in a FODO lattice, strictly valid in the asymptote for a FODO cell much shorter than the betatron function. Further on, numerical studies can be used to demonstrate that the validity of such analytical expression goes beyond the abovementioned asymptote, and can be used in much more a general context. Finally, a comparison with Genesis simulations is given. (orig.)

  5. Application of betatrons to quality control of structures

    International Nuclear Information System (INIS)

    Klevtsov, V.A.; Matveev, Yu.K.; Trefilov, V.V.

    1986-01-01

    The results of laboratory investigations on the applicability of modificated PMB-6 betatron to quality control of reinforced concrete structures are presented. The investigations have been performed for the purposes of refinement of the technique for detecting voids and establishing real reinforcement. On the basis of experimental investigations the technique and schemes of structure translucence have been developed. Examples of using betatrons for flaw detection of reinforred concrete structures are given

  6. Application of a Betatron in Photonuclear Activation Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Brune, D [AB Atomenergi, Nykoeping (Sweden); Mattsson, K; Liden, K [Dept . of Radiation Physics, Univ. of Lund (Sweden)

    1968-08-15

    The present study concerns the determination of fluorine, iodine, lead and mercury by means of photonuclear activation technique using a betatron. The detection limit obtained for the elements in the above given sequence amounted to 3, 50, 400 and 15 {mu}g respectively. The technique has been applied in the determination of iodine in pharmaceuticals. A rotating sample holder device was inserted in the Bremsstrahlung beam of the betatron in order to ensure uniform irradiation of the samples.

  7. Coherent betatron instability in the Tevatron

    International Nuclear Information System (INIS)

    Bogacz, S.A.; Harrison, M.; Ng, K.Y.

    1988-01-01

    The coherent betatron instability was first observed during the recent 1987-88 Tevatron fixed target run. In this operating mode 1000 consecutive bunches are loaded into the machine at 150 GeV with a bunch spacing of 18.8 /times/ 10 -9 sec (53 MHz). The normalized transverse emittance is typically 15 π /times/ 10 -6 m rad in each plane with a longitudinal emittance of about 1.5 eV-sec. The beam is accelerated to 800 GeV in 13 sec. and then it is resonantly extracted during a 23 sec flat top. As the run progressed the bunch intensities were increased until at about 1.4 /times/ 10 10 ppb (protons per bunch) we experienced the onset of a coherent horizontal oscillation taking place in the later stages of the acceleration cycle (>600 GeV). This rapidly developing coherent instability results in a significant emittance growth, which limits machine performance and in a catastrophic scenario it even prevents extraction of the beam. In this paper we will present a simple analytic description of the observed instability. We will show that a combination of a resistive wall coupled bunch effect and a single bunch slow head-tail instability is consistent with the above observations. Finally, a systematic numerical analysis of our model (growth-time vs chromaticity plots) points to the existence of the ≥1 slow head-tail modes as a plausible mechanism for the observed coherent instability. This last claim, as mentioned before, does not have conclusive experimental evidence, although it is based on a very good agreement between the measured values of the instability growth-time and the ones calculated on the basis of our model. 4 refs., 3 figs

  8. Evaluation of the combined betatron and momentum cleaning in point 3 in terms of cleaning efficiency and energy deposition for the LHC Collimation upgrade

    CERN Document Server

    Lari, L; Boccone, V; Brugger, M; Cerutti, F; Ferrari, A; Rossi, A; Versaci, R; Vlachoudis, V; Wollmann, D; Mereghetti, A; Faus-Golfe, A

    2011-01-01

    The Phase I LHC Collimation System Upgrade could include moving part of the Betatron Cleaning from LHC Point 7 to Point 3 to improve both operation flexibility and intensity reach. In addition, the partial relocation of beam losses from the current Betatron cleaning region at Point 7 will mitigate the risks of Single Event Upsets to equipment installed in adjacent and partly not sufficient shielded areas. The combined Betatron and Momentum Cleaning at Point 3 implies that new collimators have to be added as well as to implement a new collimator aperture layout. This paper shows the whole LHC Collimator Efficiency variation with the new layout at different beam energies. As part of the evaluation, energy deposition distribution in the IR3 region give indications about the effect of this new implementations not only on the collimators themselves but also on the other beam line elements as well as in the IR3 surrounding areas.

  9. Betatron radiation from a laser-plasma accelerator

    International Nuclear Information System (INIS)

    Schnell, Michael

    2014-01-01

    The presented thesis investigates the processes which lead to the generation of highenergetic X-ray radiation, also known as ''betatron radiation'', by means of a relativistic laser-plasma interaction. The generated betatron radiation has been extensively characterized by measuring its radiated intensity, energy distribution, far-field beam profile, and source size. It was shown for the first time that betatron radiation can be used as a non-invasive diagnostic tool to retrieve very subtle information on the electron acceleration dynamics within the plasma wave. Furthermore, a compact polarimeter setup has been developed in a unique experiment in which the polarization state of the laser-plasma generated betatron radiation was measured in single-shot mode. This lead to a detailed study of the orientation of the electron trajectory within the plasma interaction. By controlling the injection of the electrons into the plasma wave it was demonstrated that one can tune the polarization state of the emitted X-rays. This result is very promising for further applications, particularly for feeding the electrons into an additional conventional accelerator or a permanent magnet based undulator for the production of intense X-ray beams. During this work, the experimental setup for accelerating electrons and generating high-energy X-ray beams was consistently improved: to enhance both its reliability and stability. Subsequently, the betatron radiation was used as a reliable diagnostic tool of the electron dynamics within the plasma. Parallel to the experimental work, 3-Dimensional Particle-In-Cell (3D-PlC) simulations were performed together with colleagues from the University of Duesseldorf. The simulations included the electron acceleration and the X-ray generation processes together with the recoil force acting on an accelerating electron caused by the emitted radiation during which one can also ascertain its polarization state. The simulations proved to be in good agreement

  10. Inductive-pulsed power supplying system for a betatron electromagnet

    International Nuclear Information System (INIS)

    Otrubyannikov, Yu.A.; Safronov, A.S.

    1984-01-01

    Circuit of producing quasitriangular current pulses designed for the pulsed power supply system of betatron electromagnet is described. Introduction of additional winding into electromagnet provides circuit galvanic isolation, artificial commutation of basic circuit thyristors and inductive power input to the winding during thyristor commutation. The considered system is used for excitation of betatron electromagnet up to 18 MeV. Magnetic field energy equals 1100 Y. The maximal voltage in energy storage capacitor - 4.8 kV. Current amplitude in basic winding - 335 A. The number of loops in basic winding equals 80, in additional one - 32. Current pulse duration in electromagnet-3.8 ms. The system provides operation with controlled current pulse frequency from 0 up to 150 Hz. The maximal consumption power - 18 kW

  11. Linear theory of beam depolarization due to vertical betatron motion

    International Nuclear Information System (INIS)

    Chao, A.W.; Schwitters, R.F.

    1976-06-01

    It is well known that vertical betatron motion in the presence of quantum fluctuations leads to some degree of depolarization of a transversely polarized beam in electron-positron storage rings even for energies away from spin resonances. Analytic formulations of this problem, which require the use of simplifying assumptions, generally have shown that there exist operating energies where typical storage rings should exhibit significant beam polarization. Due to the importance of beam polarization in many experiments, we present here a complete calculation of the depolarization rate to lowest order in the perturbing fields, which are taken to be linear functions of the betatron motion about the equilibrium orbit. The results are applicable to most high energy storage rings. Explicit calculations are given for SPEAR and PEP. 7 refs., 8 figs

  12. Betatron stochastic cooling in the Debuncher: Present and future

    International Nuclear Information System (INIS)

    Visnjic, V.

    1993-07-01

    A detailed study of the betatron stochastic cooling in the Debuncher is presented. First, a complete theoretical model including the emittance-dependent signal-to-noise ratio as well as time-dependent mixing is constructed. The emittance measurements in the Debuncher are described and it is shown that the model is in excellent agreement with the experimental data. The idea of gain shaping is proposed and it is shown that the gain shaping would improve the cooling of the beam. Several proposals for future improvements are studied and appraised, in particular, gain shaping, ramped η, and cryogenic and ''smart'' pickups and kickers. Finally, the demands which the Main Injector will impose on the Debuncher are analyzed and a design of the betatron stochastic cooling system for the Main Injector era is outlined

  13. Long-wavelength negative mass instabilities in high current betatrons

    International Nuclear Information System (INIS)

    Godfrey, B.B.; Hughes, T.P.

    1985-01-01

    Growth rates of negative mass instabilities in conventional and modified betatrons are calculated by analytic methods and by performing three-dimensional particle simulations. In contrast to earlier work, toroidal corrections to the field equations are included in the analytic model. As a result, good agreement with numerical simulations is obtained. The simulations show that the nonlinear development of the instabilities can seriously disrupt the beam

  14. Investigation of betatron instability in a wiggler pumped ion-channel free electron laser

    Energy Technology Data Exchange (ETDEWEB)

    Raghavi, A [Physics Department, Payame Noor University, 19395-4697 (Iran, Islamic Republic of); Mehdian, H, E-mail: Raghavi@tmu.ac.ir, E-mail: Mehdian@tmu.ac.ir [Department of Physics, Teacher Training University, Tehran (Iran, Islamic Republic of)

    2011-10-15

    Betatron emission from an ion-channel free electron laser in the presence of a helical wiggler pump and in the high gain regime is studied. The dispersion relation and the frequency of betatron emission are derived. Growth rate is illustrated and maximum growth rate as a function of ion-channel density is considered. Finally, the relation between beam energy, the density of ion channel and the region of betatron emission is discussed.

  15. Measurement of betatron-tune in the KEK 12 GeV-PS/J-PARC

    International Nuclear Information System (INIS)

    Miura, Takako; Toyama, Takeshi; Igarashi, Susumu; Hayashi, Naoki

    2004-01-01

    Measurement of betatron-tune in the KEK 12 GeV-PS is performed by using band limited white noise which excites coherent betatron oscillations via stripline unit. We compared the results of the measurement for betatron oscillation amplitude with the result of calculation, and confirmed the consistency. The design of the tune-monitor in J-PARC was also discussed applying this result. (author)

  16. Schottky spectra and crystalline beams

    International Nuclear Information System (INIS)

    Pestrikov, D.V.

    1996-01-01

    In this paper we revise the current dependence of the Schottky noise power of a cooled proton beam previously measured at NAP-M. More careful study of experimental data indicates a linear decrease in the inverse Schottky noise power with an increase in the beam intensity (N). The root of this function determines a threshold current which occurs at N = N th ≅1.2 x 10 8 particles. The inspection of measured Schottky spectra shows that this threshold does not correspond to some collective instability of the measured harmonic of the linear beam density. The found value of N th does not depend on the longitudinal beam temperature. For the case of NAP-M lattice, the study of the spectral properties of the Schottky noise in the crystalline string predicts the current dependence of the equilibrium momentum spread of the beam, which qualitatively agrees with that, recalculated from the NAP-M data. (orig.)

  17. Measurement of the betatron phase advance and betatron amplitude ratio at the SPP-barS collider

    International Nuclear Information System (INIS)

    Bossart, R.; Scandale, W.

    1987-01-01

    A technique for the precise measurement of lattice functions in a hadron collider has been developed. The betatron functions on either side of the two low beta insertions of the SPS collider have been determined from the measured amplitude and phase of horizontal beam oscillations with a peak amplitude of 40 μm. Four directional couplers and four synchronous receivers working at 200 MHz monitor the betatron oscillations of the beam excited by the fast deflectors of the damper. A fast Fourier transform of the signals provides the phase and amplitude ratio of the beam oscillations between any pair of monitors. The relative amplitude and phase of the beam oscillations can be measured with an accuracy of 0 in phase. For achieving such an accuracy a special calibration method has been implemented to determine the propagation times and amplification factors of the measuring equipment, using the intensity signals of the beam itself. The same equipment can be used also for measuring the beam transfer function by injecting white noise into the beam deflectors

  18. Bruno Touschek: From Betatrons to Electron-Positron Colliders

    Science.gov (United States)

    Bernardini, Carlo; Pancheri, Giulia; Pellegrini, Claudio

    Bruno Touschek’s life as a physicist spanned the period from World War II to the 1970s. He was a key figure in the developments of electron-positron colliders and storage rings, and made important contributions to theoretical high energy physics. Storage rings, initially developed for high energy physics, are being widely used in many countries as synchrotron radiation sources and are a tool for research in physics, chemistry, biology, environmental sciences and cultural heritage studies. We describe Touschek’s life in Austria, where he was born, in Germany, where he participated in the construction of a betatron during WWII, and in Italy, where he proposed and led to completion the first electron-positron storage ring in 1960, in Frascati. We highlight how his central European culture influenced his lifestyle and work, and his main contributions to physics, such as the discovery of the Touschek effect and beam instabilities in the larger storage ring ADONE.

  19. Fast betatron tune controller for circulating beam in a synchrotron

    International Nuclear Information System (INIS)

    Endo, Takuyuki; Hatanaka, Kichiji; Sato, Kenji

    1997-01-01

    When rf quadrupole (RFQ) electric field is applied to the circulating beam in a synchrotron, an equation of motion is reduced to Mathieu's Equation. A new analytical method to obtain an approximate solution has been developed, while a numerical computation was usually applied. Translating the behavior of approximate solution into terms of an RFQ electric field and betatron oscillation, a fast tune control can be achieved by rapid tuning of both amplitude and frequency of rf voltage. This process could be applied to suppress a tune shift caused by a space charge effect and to control a slow beam extraction with a low ripple. We have started another analytical computation using Hamiltonian with perturbation of RFQ and the results of this computation also suggest that it is applicable to slow beam extraction. The fast tune controller has been constructed and the beam test will be performed at HIMAC synchrotron in cooperation of RCNP and NIRS. (author)

  20. PRINCIPLE OF SKEW QUADRUPOLE MODULATION TO MEASURE BETATRON COUPLING

    International Nuclear Information System (INIS)

    LUO, Y.; PILAT, F.; ROSER, T.

    2004-01-01

    The measurement of the residual betatron coupling via skew quadrupole modulation is a new diagnostics technique that has been developed and tested at the Relativistic Heavy Ion Collider (RHIC) as a very promising method for the linear decoupling on the ramp. By modulating the strengths of different skew quadrupole families the two eigentunes are precisely measured with the phase lock loop system. The projections of the residual coupling coefficient onto the skew quadrupole coupling modulation directions are determined. The residual linear coupling could be corrected according to the measurement. An analytical solution for skew quadrupole modulation based on Hamiltonian perturbation approximation is given, and simulation code using smooth accelerator model is also developed. Some issues concerning the practical applications of this technique are discussed

  1. Synchro-betatron resonance due to gap voltage asymmetry

    Energy Technology Data Exchange (ETDEWEB)

    Baartman, R

    1992-11-01

    RF cavities for synchrotrons are not in general axially symmetric. This can be due, for example, to the location of the input power coupling loop. It can cause the voltage on one side of the accelerating gap to be different from that on the other side. Associated with this asymmetry is an rf magnetic field which deflects a beam particle by an amount depending upon its rf phase. The deflection can accumulate if the betatron tune is situated on a synchrotron sideband of the integer resonance. We develop the theory for this resonance and apply it to the KAON Factory Booster and to the SSC LEB. We find that the upper limit on allowable voltage asymmetry across the beam pipe is 0.1% in both cases. (author) 5 refs., 1 tab.

  2. The effects of betatron phase advances on beam-beam and its compensation in RHIC

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Y.; Fischer, W.; Gu, X.; Tepikian, S.; Trbojevic, D.

    2011-03-28

    In this article we perform simulation studies to investigate the effects of betatron phase advances between the beam-beam interaction points on half-integer resonance driving term, second order chromaticty and dynamic aperture in RHIC. The betatron phase advances are adjusted with artificial matrices inserted in the middle of arcs. The lattices for the 2011 RHIC polarized proton (p-p) run and 2010 RHIC Au-Au runs are used in this study. We also scan the betatron phase advances between IP8 and the electron lens for the proposed Blue ring lattice with head-on beam-beam compensation.

  3. Fluctuations in Schottky barrier heights

    International Nuclear Information System (INIS)

    Mahan, G.D.

    1984-01-01

    A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity

  4. Algorithms for a Precise Determination of the Betatron Tune

    CERN Document Server

    Bartolini, R; Giovannozzi, Massimo; Todesco, Ezio; Scandale, Walter

    1996-01-01

    In circular accelerators the precise knowledge of the betatron tune is of paramount importance both for routine operation and for theoretical investigations. The tune is measured by sampling the transverse position of the beam for N turns and by performing the FFT of the stored data. One can also evaluate it by computing the Average Phase Advance (APA) over N turns. These approaches have an intrinsic error proportional to 1/N. However, there are special cases where either a better precision or a faster measurement is desired. More efficient algorithms can be used, as those suggested by E.Asseo [1] and recently by J. Laskar [2]. They provide tune estimates by far more precise than those of a plain FFT, as discussed in Ref. [3]. Another important isssue is the effect of the finite resolution of the instrumentation used to measure the beam position. This introduces a noise and the frequency response of the beam is modified [4,5} thus reducing the precision by which the tune is determined. In Section 2 we recall ...

  5. Longitudinal Schottky noise of intense beam

    International Nuclear Information System (INIS)

    Pestrikov, D.V.

    1990-01-01

    Some phenomena, which can be observed in the longitudinal Schottky spectra in storage ring with electron cooling as well as some technical details, which can be useful for the models of fitting are reviewed. Results shows that both the spectra and the power of the Schottky noise of the coasting beam are very sensitive to collective behaviour of the beam. This can be used for fitting of Schottky noise measurements and recalculation of beam parameters, parameters of cooling device. 9 refs.; 4 figs

  6. Iron-free betatrons - short radiation pulse generators for roentgenography of fast-going processes

    Energy Technology Data Exchange (ETDEWEB)

    Pavlovskij, A P; Zenkov, D I; Kuropatkin, Yu P; Mironenko, V D; Suvorov, V N [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation)

    1997-12-31

    The possibilities of further increasing the current in high-current iron-free betatrons are studied. The efficiency of electron capture has been successfully increased by introducing local disturbances of the betatron magnetic field. At the optimum ratios of the disturbing and the betatron field, and at the optimum winding geometry as for the field disturbances and their attenuation rate, a multi-revolution electron capture has been achieved. The dependence of the circulating current on the injection energy was studied at the optimized facility with a porcelain accelerating chamber and a conducting cover. The experimental dependence is close to the calculated one. The maximum circulating current achieved was 28030 A which is the record value for circular accelerators. (J.U.). 1 tab., 5 figs., 2 refs.

  7. Tune shift and betatron modulations due to insertion devices in SPEAR

    International Nuclear Information System (INIS)

    Corbett, W.J.

    1989-12-01

    SPEAR will soon operate as a dedicated synchrotron radiation source with up to 5 beamlines fed from insertion devices. These magnets introduce additional focusing forces into the storage ring lattice which increase the vertical betatron tune and modulate the beam envelope in the vertical plane. The lattice simulation code 'GEMINI' is used to evaluate the tune shifts and estimate the degree of betatron modulation as each magnetic insertion device is brought up to full power. A program is recommended to correct the tunes with the FODO cell quadrupoles. 4 refs., 8 figs., 1 tab

  8. Betatron radiation based diagnostics for plasma wakefield accelerated electron beams at the SPARC-LAB test facility

    International Nuclear Information System (INIS)

    Shpakov, V.; Anania, M.P.; Biagioni, A.; Chiadroni, E.; Cianchi, A.; Curcio, A.; Dabagov, S.; Ferrario, M.; Filippi, F.; Marocchino, A.; Paroli, B.; Pompili, R.; Rossi, A.R.; Zigler, A.

    2016-01-01

    Recent progress with wake-field acceleration has shown a great potential in providing high gradient acceleration fields, while the quality of the beams remains relatively poor. Precise knowledge of the beam size at the exit from the plasma and matching conditions for the externally injected beams are the key for improvement of beam quality. Betatron radiation emitted by the beam during acceleration in the plasma is a powerful tool for the transverse beam size measurement, being also non-intercepting. In this work we report on the technical solutions chosen at SPARC-LAB for such diagnostics tool, along with expected parameters of betatron radiation. - Highlights: • The betatron radiation parameters in SPARC-LAB wakefiled experiments were studied. • The differences with betatron radiation in other wake-field experiments were highlighted. • The solution for betatron radiation detection was investigated.

  9. Betatron radiation based diagnostics for plasma wakefield accelerated electron beams at the SPARC-LAB test facility

    Energy Technology Data Exchange (ETDEWEB)

    Shpakov, V.; Anania, M.P.; Biagioni, A.; Chiadroni, E. [INFN - LNF, via Enrico Fermi 40, 00044 Frascati (Italy); Cianchi, A. [INFN - LNF, via Enrico Fermi 40, 00044 Frascati (Italy); “Tor Vergata” University, via della Ricerca Scientifica 1, 00133 Rome (Italy); Curcio, A. [INFN - LNF, via Enrico Fermi 40, 00044 Frascati (Italy); Dabagov, S. [INFN - LNF, via Enrico Fermi 40, 00044 Frascati (Italy); P.N. Lebedev Physical Institute RAS, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); NRNU “MEPhI”, Kashirskoe highway 31, 115409 Moscow (Russian Federation); Ferrario, M.; Filippi, F. [INFN - LNF, via Enrico Fermi 40, 00044 Frascati (Italy); Marocchino, A. [Dipartimento SBAI Universitá di Roma ‘La Sapienza’, via Antonio Scarpa 14/16, 00161 Rome (Italy); Paroli, B. [INFN - MI, via Celoria 16, 20133 Milan (Italy); Pompili, R. [INFN - LNF, via Enrico Fermi 40, 00044 Frascati (Italy); Rossi, A.R. [INFN - MI, via Celoria 16, 20133 Milan (Italy); Zigler, A. [Racah Institute of Physics Hebrew University of Jerusalem (Israel)

    2016-09-01

    Recent progress with wake-field acceleration has shown a great potential in providing high gradient acceleration fields, while the quality of the beams remains relatively poor. Precise knowledge of the beam size at the exit from the plasma and matching conditions for the externally injected beams are the key for improvement of beam quality. Betatron radiation emitted by the beam during acceleration in the plasma is a powerful tool for the transverse beam size measurement, being also non-intercepting. In this work we report on the technical solutions chosen at SPARC-LAB for such diagnostics tool, along with expected parameters of betatron radiation. - Highlights: • The betatron radiation parameters in SPARC-LAB wakefiled experiments were studied. • The differences with betatron radiation in other wake-field experiments were highlighted. • The solution for betatron radiation detection was investigated.

  10. Synchro-betatron resonances driven by the beam-beam interaction

    International Nuclear Information System (INIS)

    Furman, M.A.

    1994-01-01

    We present a selective summary of the discussions on beam-beam-driven synchrobetatron resonances at the 6th Advanced ICFA Beam Dynamics Workshop on the subject ''Synchro-Betatron Resonances,'' held in Funchal (Madeira, Portugal), October 24--30, 1993

  11. Therapy by stationary photon fields from a 42 MeV betatron using wedge filters

    International Nuclear Information System (INIS)

    Wicke, L.; Kaercher, K.H.; Naesiger, H.; Prokosch, E.; Vienna Univ.

    1975-01-01

    The dose distribution in photon beams from a 42 MeV betatron using wedge filters of lead with different angles of slope is described. The wedge coefficient to be considered at a field size of 10 x 10 cm is given. The scope for isodoses modified by wedge filters is discussed with regard to stationary-field photon therapy. (orig.) [de

  12. Schottky Noise and Beam Transfer Functions

    Energy Technology Data Exchange (ETDEWEB)

    Blaskiewicz M.; Blaskiewicz M.

    2016-12-01

    Beam transfer functions (BTF)s encapsulate the stability properties of charged particle beams. In general one excites the beam with a sinusoidal signal and measures the amplitude and phase of the beam response. Most systems are very nearly linear and one can use various Fourier techniques to reduce the number of measurements and/or simulations needed to fully characterize the response. Schottky noise is associated with the finite number of particles in the beam. This signal is always present. Since the Schottky current drives wakefields, the measured Schottky signal is influenced by parasitic impedances.

  13. The production of radioisotopes with a betatron using an internal bombarding technique; Production de radioisotopes par bombardement interne dans un betatron; Proizvodstvo radioizotopov s pomoshch'yu betatrona s ispol'zovaniem metoda vnutrennej bombardirovki; Obtencion de radioisotopos por bombardeo interno en el betatron

    Energy Technology Data Exchange (ETDEWEB)

    Morinaga, H [Department of Physics, Tohoku University, Sendai (Japan)

    1962-01-15

    A new technique for producing radioisotopes of high specific activity with a betatron has been developed and is being used successfully. Materials to be activated are placed inside the doughnut at the end of a blind cylinder inserted from outside; thus samples are bombarded under one atmosphere just behind the bremsstrahlung target where the radiation intensity is extremely high. The saturation activity of Cu{sup 62} produced on a small piece of copper exceeded 1 mc, and the highest specific activity obtainable was approximately 500 times that produced in a conventional arrangement. So far, this internal-target technique has been used only for nuclear spectroscopy work; eight new species of radioactive isotopes (Co{sup 63}, Ga{sup 75}, As{sup 81}, In{sup 121}, In{sup 123}, Tm{sup 173}, Tm{sup 175} and Ac{sup 231}) have been identified and several new isomers have been found. The feasibility of this bombarding technique opens neiv possibilities, since medical, industrial or research betatrons may now be used, for isotope production. Short-lived isotopes are often more convenient in various applications because of their fast decay and high-energy radiation, and they may be made readily without any special skill. (author) [French] On a mis au point et utilise avec succes line technique nouvelle pour la production de radioisotopes d'activite specifique elevee dans un betatron. Les matieres a activer sont placees a l'interieur d'un tube toroidal, a l'extremite d'un cylindre a ouverture unique introduit de l'exterieur; les echantillons se trouvent ainsi bombardes, sous une atmosphere, juste derriere la cible de rayonnement de freinage, a l'endroit ou l'intensite du rayonnement est extremement elevee. L'activite de saturation du {sup 62}Cu produite sur de petits morceaux de cuivre depassait 1 millicurie et l'activite specifique la plus elevee que l'on ait pu obtenir egalait environ 500 fois l'activite produite dans un dispositif classique. Jusqu'a present, cette technique

  14. Automatic Correction of Betatron Coupling in the LHC Using Injection Oscillations

    CERN Document Server

    Persson, T; Jacquet, D; Kain, V; Levinsen, Y; McAteer, M-J; Maclean, E; Skowronski, P; Tomas, R; Vanbavinckhove, G; Miyamoto, R

    2013-01-01

    The control of the betatron coupling at injection and during the energy ramp is critical for the safe operation of the tune feedback and for the dynamic aperture. In the LHC every fill is preceded by the injection of a pilot bunch with low intensity. Using the injection oscillations from the pilot bunch we are able to measure the coupling at each individual BPM. The measurement is used to calculate a global coupling correction. The correction is based on the use of two orthogonal knobs which correct the real and imaginary part of the difference resonance term f1001, respectively. This method to correct the betatron coupling has been proven successful during the normal operation of the LHC. This paper presents the method used to calculate the corrections and its performance.

  15. Successful betatron acceleration of kiloampere electron rings in RECE-Christa

    International Nuclear Information System (INIS)

    Taggart, D.P.; Parker, M.R.; Hopman, H.J.; Jayakumar, R.; Fleischmann, H.H.

    1984-01-01

    This paper reports on betatron acceleration experiments using the space-charge-neutralized electron rings in the RECE-Christa device. Magnetic probe and x-ray-absorption measurements indicate that electron ring currents of up to 2 kA were accelerated to 3.3 +- 0.3 MeV without indication of instabilities. A similar neutralization and acceleration method also appears applicable to electron rings generated in B/sub theta/-free configurations

  16. Landau damping due to tune spreads in betatron amplitude and momentum

    International Nuclear Information System (INIS)

    Lee, S.Y.; Tran, P.; Weng, W.T.

    1989-01-01

    Due to the large space charge transverse impedance in a low energy synchrotron, the coherent tune shift causes the Landau damping to be ineffective in damping the transverse coherent motion. We analyze the effect of Landau damping that is caused by the tune spreads of the betatron amplitude (space charge and/or octupole) and momentum. We find that the Landau damping becomes more significant in our two dimensional analysis. 5 refs

  17. Approximate method for calculating heat conditions in the magnetic circuits of transformers and betatrons

    International Nuclear Information System (INIS)

    Loginov, V.S.

    1986-01-01

    A technique for engineering design of two-dimensional stationary temperature field of rectangular cross section blending pile with inner heat release under nonsymmetrical cooling conditions is suggested. Area of its practical application is determined on the basis of experimental data known in literature. Different methods for calculating temperature distribution in betatron magnetic circuit are compared. Graph of maximum temperature calculation error on the basis of approximated expressions with respect to exact solution is given

  18. Experimental investigation of a small-sized betatron with superposed magnetization

    International Nuclear Information System (INIS)

    Kas'yanov, V.A.; Rychkov, M.V.; Filimonov, A.A.; Furman, Eh.G.; Chakhlov, V.L.; Chertov, A.S.; Shtejn, M.M.

    2001-01-01

    The aim of the paper is to study possibilities of small-sized betatrons (SSB) with direct current superposed magnetization (DSM). It is shown that DSM permits to decrease the SSB weight and cost of the electromagnet and capacitor storage and to shape the prolonged beam dump. It is noted that the DSM realization has the most expediency in SSB operating in a short-time mode [ru

  19. Coherent betatron instability driven by electrostatic separators: Stability analysis of the Tevatron

    International Nuclear Information System (INIS)

    Harfoush, F.A.; Bogacz, S.A.

    1989-03-01

    This paper outlines possible intensity limits due to the coherent betatron motion for the upgraded Tevatron with the electrostatic separators. Numerical simulation shows that this new vacuum chamber structure dominates the high frequency part of the coupling impedance spectrum and more likely will excite a slow head-tail instability. A simple stability analysis yields the characteristic growth-time of the unstable modes. 4 refs., 4 figs., 1 tab

  20. High-speed radiography and x-ray cinematography by high-current betatrons

    International Nuclear Information System (INIS)

    Akimochkin, Yu.V.; Akulov, G.V.; Leunov, F.G.; Moskalev, V.A.; Ryabukhin, V.L.

    1979-01-01

    The paper provides a description of an equipment system comprising a pair of 25 MeV high-current betatrons and an X-ray drum-type cinecamera for high-speed radiography and X-ray cinematography for use when studying dynamics of objects moving at a rate of 0.5 - 3.0 km/s as well as in X-ray cinematography of processes at a rate of up to 1 m/s. (author)

  1. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, D.; Rajput, S.; Li, L.

    2017-04-01

    Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.

  2. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Li, L

    2017-01-01

    Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS 2 to fabricate Schottky junctions. These junctions exhibit rectifying current–voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions. (paper)

  3. Betatron emission as a diagnostic for injection and acceleration mechanisms in laser plasma accelerators

    International Nuclear Information System (INIS)

    Corde, S; Thaury, C; Phuoc, K Ta; Lifschitz, A; Lambert, G; Lundh, O; Brijesh, P; Sebban, S; Rousse, A; Faure, J; Malka, V; Arantchuk, L

    2012-01-01

    Betatron x-ray emission in laser plasma accelerators is a promising compact source that may be an alternative to conventional x-ray sources, based on large scale machines. In addition to its potential as a source, precise measurements of betatron emission can reveal crucial information about relativistic laser–plasma interaction. We show that the emission length and the position of the x-ray emission can be obtained by placing an aperture mask close to the source, and by measuring the beam profile of the betatron x-ray radiation far from the aperture mask. The position of the x-ray emission gives information on plasma wave breaking and hence on the laser non-linear propagation. Moreover, the measurement of the longitudinal extension helps one to determine whether the acceleration is limited by pump depletion or dephasing effects. In the case of multiple injections, it is used to retrieve unambiguously the position in the plasma of each injection. This technique is also used to study how, in a capillary discharge, the variations of the delay between the discharge and the laser pulse affect the interaction. The study reveals that, for a delay appropriate for laser guiding, the x-ray emission only occurs in the second half of the capillary: no electrons are injected and accelerated in the first half. (paper)

  4. Characteristics of a betatron core for extraction in a proton-ion medical synchrotron

    CERN Document Server

    Badano, L

    1997-01-01

    Medical synchrotrons for radiation therapy require a very stable extraction of the beam over a period of about one second. The techniques for applying resonant extraction to achieve this long spill can be classified into two groups, those that move the resonance and those that move the beam. The latter has the great advantage of keeping all lattice functions, and hence the resonance conditions, constant. The present report examines the possibility of using a betatron core to accelerate the waiting ion beam by induction into the resonance. The working principle, the proposed characteristics and the expected performances of this device are discussed. The betatron core is a smooth high-inductance device compared to the small quadrupole lenses that are normally used to move the resonance and is therefore better suited to delivering a very smooth spill. The large stored energy in a betatron core compared to a small quadrupole is also a safety feature since it responds less quickly to transients that could send lar...

  5. Schottky barrier MOSFET systems and fabrication thereof

    Science.gov (United States)

    Welch, J.D.

    1997-09-02

    (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

  6. Carbon nanotube Schottky diode: an atomic perspective

    International Nuclear Information System (INIS)

    Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

    2008-01-01

    The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

  7. Flexible IGZO Schottky diodes on paper

    Science.gov (United States)

    Kaczmarski, Jakub; Borysiewicz, Michał A.; Piskorski, Krzysztof; Wzorek, Marek; Kozubal, Maciej; Kamińska, Eliana

    2018-01-01

    With the development of novel device applications, e.g. in the field of robust and recyclable paper electronics, came an increased demand for the understanding and control of IGZO Schottky contact properties. In this work, a fabrication and characterization of flexible Ru-Si-O/IGZO Schottky barriers on paper is presented. It is found that an oxygen-rich atomic composition and microstructure of Ru-Si-O containing randomly oriented Ru inclusions with diameter of 3-5 nm embedded in an amorphous SiO2 matrix are effective in preventing interfacial reactions in the contact region, allowing to avoid pre-treatment of the semiconductor surface and fabricate reliable diodes at room temperature characterized by Schottky barrier height and ideality factor equal 0.79 eV and 2.13, respectively.

  8. A broadband gamma-ray spectrometry using novel unfolding algorithms for characterization of laser wakefield-generated betatron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jong Ho, E-mail: jhjeon07@ibs.re.kr; Nakajima, Kazuhisa, E-mail: naka115@dia-net.ne.jp; Pathak, Vishwa Bandhu; Cho, Myung Hoon; Yoo, Byung Ju; Shin, Kang Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 500-712 (Korea, Republic of); Kim, Hyung Taek; Sung, Jae Hee; Lee, Seung Ku; Choi, Il Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 500-712 (Korea, Republic of); Advanced Photonics Research Institute, GIST, Gwangju 500-712 (Korea, Republic of); Rhee, Yong Joo [Nuclear Data Center, Korea Atomic Energy Research Institute, Daejeon 305-353 (Korea, Republic of); Shin, Jung Hun; Jo, Sung Ha [Advanced Photonics Research Institute, GIST, Gwangju 500-712 (Korea, Republic of); Hojbota, Calin; Cho, Byeoung Ick; Nam, Chang Hee [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 500-712 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 500-712 (Korea, Republic of)

    2015-12-15

    We present a high-flux, broadband gamma-ray spectrometry capable of characterizing the betatron radiation spectrum over the photon energy range from 10 keV to 20 MeV with respect to the peak photon energy, spectral bandwidth, and unique discrimination from background radiations, using a differential filtering spectrometer and the unfolding procedure based on the Monte Carlo code GEANT4. These properties are experimentally verified by measuring betatron radiation from a cm-scale laser wakefield accelerator (LWFA) driven by a 1-PW laser, using a differential filtering spectrometer consisting of a 15-filter and image plate stack. The gamma-ray spectra were derived by unfolding the photostimulated luminescence (PSL) values recorded on the image plates, using the spectrometer response matrix modeled with the Monte Carlo code GEANT4. The accuracy of unfolded betatron radiation spectra was assessed by unfolding the test PSL data simulated with GEANT4, showing an ambiguity of less than 20% and clear discrimination from the background radiation with less than 10%. The spectral analysis of betatron radiation from laser wakefield-accelerated electron beams with energies up to 3 GeV revealed radiation spectra characterized by synchrotron radiation with the critical photon energy up to 7 MeV. The gamma-ray spectrometer and unfolding method presented here facilitate an in-depth understanding of betatron radiation from LWFA process and a novel radiation source of high-quality photon beams in the MeV regime.

  9. Photoneutron source based on a compact 10 MeV betatron

    International Nuclear Information System (INIS)

    Bell, Z.W.; Chaklov, V.L.; Golovkov, V.M.

    1998-01-01

    Accelerator-based photoneutron sources have enjoyed wide use and offer the advantages of long term stability, ease of control and absence of radioactive materials. The authors report here measurements of the yield of photoneutrons from a neutron generator using a compact betatron (466 kg total weight, 900 by 560 by 350 mm betatron dimensions) at the Institute of Introscopy of the Tomsk Polytechnic University. Electrons were accelerated to energies up to 10 MeV and produced a bremsstrahlung beam with a dose rate of 0.16 Gy/min (at 10 MeV, 1 meter from the bremsstrahlung target) to irradiate LiD, Be, depleted U, and Pb neutron-producing targets. The angular distributions of photoneutrons produced by bremsstrahlung beams were measured with a long counter and integrated to determine neutron yield. In addition, neutron time of flight spectra were recorded from all targets using a 15 meter flight path perpendicular to the photon beam. The maximum observed yields were 5.2 x 10 4 n/rad/gram target obtained with LiD, 1.7 x 10 4 n/rad/gram from Be, 3.3 x 10 3 n/rad/gram from U, and 7.5 x 10 2 n/rad/gram from Pb. Optimization of target dimensions, shape, and positioning is expected to increase the yield from the LiD target by a factor of 35. With the increased yield, this compact betatron-based system could find application in the interrogation of waste containers for fissile material

  10. Demonstration of no feasibility of a crystalline beam in a Betatron Magnet II

    International Nuclear Information System (INIS)

    Ruggiero, A.G.

    1993-01-01

    This paper investigates the feasibility of a Crystalline Beam in a weak-focusing Betatron Magnet. The curvature effect due to the bending magnet is also investigated. The case of circular one- dimensional string of electrically-charged particles is examined. It is found that the motion is unstable due to the dependence of the precession movement with the radial displacement. That is a form of negative-mass instability which can be avoided with an alternating-focussing structure. The calculation of the particle-particle interaction as well as of the forces due to the external magnetic field is done directly in the laboratory frame

  11. Thyristor current-pulse generator for betatron electromagnet with independent low-voltage supply

    International Nuclear Information System (INIS)

    Baginskii, B.A.; Makarevich, V.N.; Shtein, M.M.

    1989-01-01

    A thyristor generator is described that produces unipolar current pulses in the winding of a betatron electromagnet. The voltage on the electro-magnet is increased and the shape of the current pulses is improved by use of an intermediate inductive storage device. The current pulses have a duration of 11 msec, an amplitude of 190 A, and a repetition frequency of 50 Hz. The maximum magnetic-field energy is 450 J, the voltage on the electromagnet winding is 1.5 kV, and the supply voltage is 27 V

  12. Formation of Field-reversed-Configuration Plasma with Punctuated-betatron-orbit Electrons

    International Nuclear Information System (INIS)

    Welch, D.R.; Cohen, S.A.; Genoni, T.C.; Glasser, A.H.

    2010-01-01

    We describe ab initio, self-consistent, 3D, fully electromagnetic numerical simulations of current drive and field-reversed-configuration plasma formation by odd-parity rotating magnetic fields (RMFo). Magnetic-separatrix formation and field reversal are attained from an initial mirror configuration. A population of punctuated-betatron-orbit electrons, generated by the RMFo, carries the majority of the field-normal azimuthal electrical current responsible for field reversal. Appreciable current and plasma pressure exist outside the magnetic separatrix whose shape is modulated by the RMFo phase. The predicted plasma density and electron energy distribution compare favorably with RMFo experiments.

  13. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  14. Schottky contacts to In2O3

    Directory of Open Access Journals (Sweden)

    H. von Wenckstern

    2014-04-01

    Full Text Available n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

  15. Polycrystalline Diamond Schottky Diodes and Their Applications.

    Science.gov (United States)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  16. Graphite based Schottky diodes formed semiconducting substrates

    Science.gov (United States)

    Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

    2010-03-01

    We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

  17. Pentacene-based photodiode with Schottky junction

    International Nuclear Information System (INIS)

    Lee, Jiyoul; Hwang, D.K.; Park, C.H.; Kim, S.S.; Im, Seongil

    2004-01-01

    We have fabricated a metal/organic semiconductor Schottky photodiode based on Al/pentacene junction. Since the energy band gap of thin solid pentacene was determined to be 1.82 eV, as characterized by direct absorption spectroscopy, we measured spectral photoresponses on our Schottky photodiode in the monochromatic light illumination range of 325-650 nm applying a reverse bias of -2 V. The main features of photo-response spectra were found to shift from those of direct absorption spectra toward higher photon energies. It is because the direct absorption spectra mainly show exciton level peaks rather than the true highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps while the photo-response spectra clearly represents the true HOMO-LUMO gap. Our photo-response spectra reveal 1.97 eV as the HOMO-LUMO gap

  18. Gallium Nitride Schottky betavoltaic nuclear batteries

    International Nuclear Information System (INIS)

    Lu Min; Zhang Guoguang; Fu Kai; Yu Guohao; Su Dan; Hu Jifeng

    2011-01-01

    Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ( 63 Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm -2 . The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  19. Schottky Barriers in Bilayer Phosphorene Transistors.

    Science.gov (United States)

    Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

    2017-04-12

    It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

  20. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

    OpenAIRE

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-01-01

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28?eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increa...

  1. Correction of vertical dispersion and betatron coupling for the CLIC damping ring

    CERN Document Server

    Korostelev, M S

    2006-01-01

    The sensitivity of the CLIC damping ring to various kinds of alignment errors has been studied. Without any correction, fairly small vertical misalignments of the quadrupoles and, in particular, the sextupoles, introduce unacceptable distortions of the closed orbit as well as intolerable spurious vertical dispersion and coupling due to the strong focusing optics of the damping ring. A sophisticated beam-based correction scheme has been developed to bring the design target emittances and the dynamic aperture back to the ideal value. The correction using dipolar correctors and several skew quadrupole correctors allows a minimization of the closed-orbit distortion, the cross-talk between vertical and horizontal closed orbits, the residual vertical dispersion and the betatron coupling.

  2. Temporal profile of betatron radiation from laser-driven electron accelerators

    Czech Academy of Sciences Publication Activity Database

    Horný, Vojtěch; Nejdl, Jaroslav; Kozlová, Michaela; Krůs, Miroslav; Boháček, Karel; Petržílka, Václav; Klimo, Ondřej

    2017-01-01

    Roč. 24, č. 6 (2017), č. článku 063107. ISSN 1070-664X R&D Projects: GA ČR GA15-03118S; GA MŠk LQ1606; GA MŠk(CZ) LM2015083; GA MŠk(CZ) LD14089 EU Projects: European Commission(XE) 654148 - LASERLAB-EUROPE Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162; GA MŠk(CZ) LM2015042 Institutional support: RVO:61389021 ; RVO:68378271 Keywords : X-ray betatron * laser * X-ray pulses Subject RIV: BL - Plasma and Gas Discharge Physics; BL - Plasma and Gas Discharge Physics (FZU-D) OBOR OECD: Fluids and plasma physics (including surface physics); Fluids and plasma physics (including surface physics) (FZU-D) Impact factor: 2.115, year: 2016 http://aip.scitation.org/doi/full/10.1063/1.4985687

  3. Demonstration of no feasibility of a Crystalline Beam in a Betatron Magnet

    Energy Technology Data Exchange (ETDEWEB)

    Ruggiero, A.G.

    1993-09-13

    This technical report investigates the feasibility of a Crystalline Beam in a weak-focussing storage ring like a Betatron. At the same time the curvature effect due to the bending magnet is also investigated. As a special case, the example of a circular one-dimensional string of electrically charged particles is examined. It is found that the motion of the particles is unstable due to the dependence of the precession movement with respect to each other on their radial displacement. That is a form of negative-mass instability which can be avoided with an alternating-focussing structure corresponding to a transition energy above the energy of the particles. The calculation of the particle-particle interaction as well as of the forces due to the external magnetic field is done directly in the laboratory frame. The retarded potential expressions are used at this purpose.

  4. Betatron-collimation Studies for Heavy Ions in the FCC-hh

    CERN Multimedia

    Logothetis Agaliotis, Efstathios

    2018-01-01

    One of the biggest challenges in the design of the FCC-hh is the collimation system. From LHC experience it is known that a collimation system optimized for proton cleaning has a significantly reduced efficiency for heavy ions. The study presented in this contribution evaluates the betatron-collimation efficiency for the heavy-ion operation with lead nuclei at a beam energy of 50 Z TeV in the system designed for proton operation. The fragmentation processes of the main beam particles in the primary collimator are simulated with FLUKA and fragments are individually tracked with SixTrack until being lost in the downstream aperture. In this way a first-impact loss-map is obtained, identifying locations where high energy deposition are to be expected. This provides a first-level assessment of feasibility and allows to include countermeasures in the conceptual accelerator design.

  5. Performance of a correlator filter in betatron tune measurements and damping on the NSLS booster

    International Nuclear Information System (INIS)

    Galayda, J.

    1985-01-01

    A ''compensated correlator filter'', described by Kramer, et al. has been used for measurement and damping of betatron oscillations in the NSLS booster. The filter consists of a zero-degree power splitter, a 180-degree splitter, a length of 7/8'' air dielectric coaxial cable, and a short length of RG-58 cable. Connected to a beam position monitor, the output of the filter is proportional to the difference in transverse position of each bunch on subsequent turns. The useful bandwidth of the filter for damping rigid bunch oscillations extends from 10 MHz to 250 MHz, in contrast with the gigahertz bandwidth requirements for stochastic cooling, for which the filter was originally proposed. Attenuation of all rotation harmonics in this bandwidth is 40 to 60 dB

  6. Neutron doses to personnel from a 24 MeV betatron

    International Nuclear Information System (INIS)

    Beckham, W.A; Entwistle, R.F.

    1987-01-01

    Neutrons are produced by bombardment of most materials by high-energy photons. Because the x-ray shielding around high-energy x-ray generators may not have been designed with neutrons in mind there may be unexpected contributions to the radiation doses of staff working in the immediate vicinity. Neutron fluxes in the working area close to an Allis-Chalmers 24 MeV betatron have been measured using a lithium-6-loaded scintillator and the dose rates calculated. Hazard of staff has been found to be low; typical dose-equivalent rates in occupied areas range from 0.0042 to 0.012 mrem/hour. The flux of fast neutrons in the treatment room was found to be essentially zero. Measurements of neutron flux may be routinely performed using the scintillation detector (NE 912) described, and could usefully form part of the acceptance protocol for any new accelerator

  7. Betatron tomography with the use of non-linear backprojection techniques

    International Nuclear Information System (INIS)

    Baranov, V.A.; Temnik, A.K.; Chakhlov, V.L.; Chekalin, A.S.

    1995-01-01

    The testing of heavy components under non-steady-state condition (at erection and building sites, at jigs, for testing of welded joints and valving of oil and gas pipelines, power and boiler plants repair, building construction and for testing of castings and welded joints of large thickness) traditionally belongs to most pressing NDT problems. One of essential prerequisites for success at this point was the elaboration of appropriate high energy radiation sources, in particular small size pulse betatrons like MIB-4 and MIB-6 with the energy 4 and 6 MeV. Now, taking into account the new possibilities of tomography, the adaptation of fresh methods of cross-sectional visualisation (like non-linear tomosynthesis) to this conventional problem-solving area is of special interest. (orig./RHM)

  8. New microfocus bremsstrahlung source based on betatron B-18 for high-resolution radiography and tomography

    Science.gov (United States)

    Rychkov, M. M.; Kaplin, V. V.; Malikov, E. L.; Smolyanskiy, V. A.; Stepanov, I. B.; Lutsenko, A. S.; Gentsel'man, V.; Vas'kovskiy, I. K.

    2018-01-01

    New microfocus source of hard bremsstrahlung (photon energy > 1 MeV), based on the betatron B-18 with a narrow Ta target inside, for high-resolution radiography and tomography is presented. The first studies of the source demonstrate its possibilities for practical applications to detect the microdefects in products made from heavy materials and to control gaps in joints of parts of composite structures of engineering facilities. The radiography method was used to investigate a compound object consisting of four vertically arranged steel bars between which surfaces were exposed gaps of 10 μm in width. The radiographic image of the object, obtained with a magnification of 2.4, illustrates the good sensitivity of detecting the gaps between adjacent bars, due to the small width of the linear focus of the bremsstrahlung source.

  9. Photoneutron source based on a compact 10 MeV betatron

    International Nuclear Information System (INIS)

    Chakhlov, V.L.; Bell, Z.W.; Golovkov, V.M.; Shtein, M.M.

    1999-01-01

    Accelerator-based photoneutron sources have enjoyed wide use and offer the advantages of long term stability, ease of control and absence of radioactive materials. We report here measurements of the yield of photoneutrons from a neutron generator using a compact betatron. Electrons were accelerated to energies up to 10 MeV and produced a bremsstrahlung beam with a dose rate of 0.16 Gy/min (at 10 MeV, 1 m from the bremsstrahlung target) to irradiate LiD, Be, depleted U, and Pb neutron-producing targets. The angular distributions of photoneutrons produced by bremsstrahlung beams were measured with a 'long' counter and integrated to determine neutron yield. In addition, neutron time of flight spectra were recorded from all targets using a 15.5 m flight path perpendicular to the photon beam. The maximum observed yields were 4.6x10 7 n/s obtained with 1 kg of LiD, 5.7x10 7 n/s from a 3.3 kg Be block, 6.2x10 6 n/s from 1.5 kg of depleted U, and 7.0x10 6 n/s from 10.7 kg of Pb. Optimization of target dimensions, shape, and positioning is expected to increase the yield from the LiD target by a factor of 35, while optimization of the other targets is expected to yield at most a factor of 10. With the increased yield and a deuteride target, this compact betatron-based system could find application in the interrogation of waste containers for fissile material

  10. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  11. Model and observations of Schottky-noise suppression in a cold heavy-ion beam.

    Science.gov (United States)

    Danared, H; Källberg, A; Rensfelt, K-G; Simonsson, A

    2002-04-29

    Some years ago it was found at GSI in Darmstadt that the momentum spread of electron-cooled beams of highly charged ions dropped abruptly to very low values when the particle number decreased to 10 000 or less. This has been interpreted as an ordering of the ions, such that they line up after one another in the ring. We report observations of similar transitions at CRYRING, including an accompanying drop in Schottky-noise power. We also introduce a model of the ordered beam from which the Schottky-noise power can be calculated numerically. The good agreement between the model calculation and the experimental data is seen as evidence for a spatial ordering of the ions.

  12. LINES

    Directory of Open Access Journals (Sweden)

    Minas Bakalchev

    2015-10-01

    Full Text Available The perception of elements in a system often creates their interdependence, interconditionality, and suppression. The lines from a basic geometrical element have become the model of a reductive world based on isolation according to certain criteria such as function, structure, and social organization. Their traces are experienced in the contemporary world as fragments or ruins of a system of domination of an assumed hierarchical unity. How can one release oneself from such dependence or determinism? How can the lines become less “systematic” and forms more autonomous, and less reductive? How is a form released from modernistic determinism on the new controversial ground? How can these elements or forms of representation become forms of action in the present complex world? In this paper, the meaning of lines through the ideas of Le Corbusier, Leonidov, Picasso, and Hitchcock is presented. Spatial research was made through a series of examples arising from the projects of the architectural studio “Residential Transformations”, which was a backbone for mapping the possibilities ranging from playfulness to exactness, as tactics of transformation in the different contexts of the contemporary world.

  13. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

    Science.gov (United States)

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-05-06

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

  14. Measurement of angularly dependent spectra of betatron gamma-rays from a laser plasma accelerator with quadrant-sectored range filters

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jong Ho, E-mail: jhjeon07@ibs.re.kr; Nakajima, Kazuhisa, E-mail: naka115@dia-net.ne.jp; Rhee, Yong Joo; Pathak, Vishwa Bandhu; Cho, Myung Hoon; Shin, Jung Hun; Yoo, Byung Ju; Jo, Sung Ha; Shin, Kang Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Kim, Hyung Taek; Sung, Jae Hee; Lee, Seong Ku; Choi, Il Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Advanced Photonics Research Institute, GIST, Gwangju 61005 (Korea, Republic of); Hojbota, Calin; Bae, Lee Jin; Jung, Jaehyung; Cho, Min Sang; Cho, Byoung Ick; Nam, Chang Hee [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 61005 (Korea, Republic of)

    2016-07-15

    Measurement of angularly dependent spectra of betatron gamma-rays radiated by GeV electron beams from laser wakefield accelerators (LWFAs) are presented. The angle-resolved spectrum of betatron radiation was deconvolved from the position dependent data measured for a single laser shot with a broadband gamma-ray spectrometer comprising four-quadrant sectored range filters and an unfolding algorithm, based on the Monte Carlo code GEANT4. The unfolded gamma-ray spectra in the photon energy range of 0.1–10 MeV revealed an approximately isotropic angular dependence of the peak photon energy and photon energy-integrated fluence. As expected by the analysis of betatron radiation from LWFAs, the results indicate that unpolarized gamma-rays are emitted by electrons undergoing betatron motion in isotropically distributed orbit planes.

  15. Multiple resonance compensation for betatron coupling and its equivalence with matrix method

    CERN Document Server

    De Ninno, G

    1999-01-01

    Analyses of betatron coupling can be broadly divided into two categories: the matrix approach that decouples the single-turn matrix to reveal the normal modes and the hamiltonian approach that evaluates the coupling in terms of the action of resonances in perturbation theory. The latter is often regarded as being less exact but good for physical insight. The common opinion is that the correction of the two closest sum and difference resonances to the working point is sufficient to reduce the off-axis terms in the 4X4 single-turn matrix, but this is only partially true. The reason for this is explained, and a method is developed that sums to infinity all coupling resonances and, in this way, obtains results equivalent to the matrix approach. The two approaches is discussed with reference to the dynamic aperture. Finally, the extension of the summation method to resonances of all orders is outlined and the relative importance of a single resonance compared to all resonances of a given order is analytically desc...

  16. Positron Source from Betatron X-rays Emitted in a Plasma Wiggler

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, D.K.; Clayton, C.E.; Huang, C.; Joshi, C.; Lu, W.; Marsh, K.A.; Mori, W.B.; Zhou, M.; /UCLA; Barnes, C.D.; Decker, F.J.; Hogan, M.J.; Iverson, R.H.; Krejcik, P.; O' Connell, C.L.; Siemann, R.; Walz, D.R.; /SLAC; Deng, S.; Katsouleas, T.C.; Muggli, P.; Oz, E.; /Southern California U.

    2006-04-21

    In the E-167 plasma wakefield accelerator (PWFA) experiments in the Final Focus Test Beam (FFTB) at the Stanford Linear Accelerator Center (SLAC), an ultra-short, 28.5 GeV electron beam field ionizes a neutral column of Lithium vapor. In the underdense regime, all plasma electrons are expelled creating an ion column. The beam electrons undergo multiple betatron oscillations leading to a large flux of broadband synchrotron radiation. With a plasma density of 3 x 10{sup 17}cm{sup -3}, the effective focusing gradient is near 9 MT/m with critical photon energies exceeding 50 MeV for on-axis radiation. A positron source is the initial application being explored for these X-rays, as photo-production of positrons eliminates many of the thermal stress and shock wave issues associated with traditional Bremsstrahlung sources. Photo-production of positrons has been well-studied; however, the brightness of plasma X-ray sources provides certain advantages. In this paper, we present results of the simulated radiation spectra for the E-167 experiments, and compute the expected positron yield.

  17. Improved control of the betatron coupling in the Large Hadron Collider

    Science.gov (United States)

    Persson, T.; Tomás, R.

    2014-05-01

    The control of the betatron coupling is of importance for safe beam operation in the LHC. In this article we show recent advancements in methods and algorithms to measure and correct coupling. The benefit of using a more precise formula relating the resonance driving term f1001 to the ΔQmin is presented. The quality of the coupling measurements is increased, with about a factor 3, by selecting beam position monitor (BPM) pairs with phase advances close to π/2 and through data cleaning using singular value decomposition with an optimal number of singular values. These improvements are beneficial for the implemented automatic coupling correction, which is based on injection oscillations, presented in the article. Furthermore, a proposed coupling feedback for the LHC is presented. The system will rely on the measurements from BPMs equipped with a new type of high resolution electronics, diode orbit and oscillation, which will be operational when the LHC restarts in 2015. The feedback will combine the coupling measurements from the available BPMs in order to calculate the best correction.

  18. Improved control of the betatron coupling in the Large Hadron Collider

    Directory of Open Access Journals (Sweden)

    T. Persson

    2014-05-01

    Full Text Available The control of the betatron coupling is of importance for safe beam operation in the LHC. In this article we show recent advancements in methods and algorithms to measure and correct coupling. The benefit of using a more precise formula relating the resonance driving term f_{1001} to the ΔQ_{min} is presented. The quality of the coupling measurements is increased, with about a factor 3, by selecting beam position monitor (BPM pairs with phase advances close to π/2 and through data cleaning using singular value decomposition with an optimal number of singular values. These improvements are beneficial for the implemented automatic coupling correction, which is based on injection oscillations, presented in the article. Furthermore, a proposed coupling feedback for the LHC is presented. The system will rely on the measurements from BPMs equipped with a new type of high resolution electronics, diode orbit and oscillation, which will be operational when the LHC restarts in 2015. The feedback will combine the coupling measurements from the available BPMs in order to calculate the best correction.

  19. Synchronisation of the LHC Betatron Coupling and Phase Advance Measurement System

    CERN Document Server

    Gasior, M

    2014-01-01

    The new LHC Diode ORbit and OScillation (DOROS) system will provide beam position readings with submicrometre resolution and at the same time will be able to perform measurements of local betatron coupling and beam phase advance with micrometre beam excitation. The oscillation sub-system employs gain-controlled RF amplifiers, shared with the orbit system, and followed by dedicated diode detectors to demodulate the beam oscillation signals into the kHz frequency range, subsequently digitized by multi-channel 24-bit ADCs. The digital signals are processed in each front-end with an FPGA and the results of reduced throughput are sent using an Ethernet protocol to a common concentrator, together with the orbit data. The phase advance calculation between multiple Beam Position Monitors (BPMs) requires that all DOROS front-ends have a common phase reference. This paper presents methods used to generate such a reference and to maintain a stable synchronous sampling on all system front-ends. The performance of the DOR...

  20. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  1. Schottky-contact plasmonic rectenna for biosensing

    Science.gov (United States)

    Alavirad, Mohammad; Siadat Mousavi, Saba; Roy, Langis; Berini, Pierre

    2013-10-01

    We propose a plasmonic gold nanodipole array on silicon, forming a Schottky contact thereon, and covered by water. The behavior of this array under normal excitation has been extensively investigated. Trends have been found and confirmed by identification of the mode propagating in nanodipoles and its properties. This device can be used to detect infrared radiation below the bandgap energy of the substrate via internal photoelectric effect (IPE). Also we estimate its responsivity and detection limit. Finally, we assess the potential of the structure for bulk and surface (bio) chemical sensing. Based on modal results an analytical model has been proposed to estimate the sensitivity of the device. Results show a good agreement between numerical and analytical interpretations.

  2. Cooling of radioactive isotopes for Schottky mass spectrometry

    International Nuclear Information System (INIS)

    Steck, M.; Beckert, K.; Eickhoff, H.; Franzke, B.; Nolden, F.; Reich, H.; Schlitt, B.; Winkler, T.

    1999-01-01

    Nuclear masses of radioactive isotopes can be determined by measurement of their revolution frequency relative to the revolution frequency of reference ions with well-known masses. The resolution of neighboring frequency lines and the accuracy of the mass measurement is dependent on the achievable minimum longitudinal momentum spread of the ion beam. Electron cooling allows an increase of the phase space density by several orders of magnitude. For high intensity beams Coulomb scattering in the dense ion beam limits the beam quality. For low intensity beams a regime exists in which the diffusion due to intrabeam scattering is not dominating any more. The minimum momentum spread δp/p=5x10 -7 which is observed by Schottky noise analysis is considerably higher than the value expected from the longitudinal electron temperature. The measured frequency spread results from fluctuations of the magnetic field in the storage ring magnets. Systematic mass measurements have started and can be presently used for ions with half-lives of some ten seconds. For shorter-lived nuclei a stochastic precooling system is in preparation

  3. Schottky-contact plasmonic dipole rectenna concept for biosensing.

    Science.gov (United States)

    Alavirad, Mohammad; Mousavi, Saba Siadat; Roy, Langis; Berini, Pierre

    2013-02-25

    Nanoantennas are key optical components for several applications including photodetection and biosensing. Here we present an array of metal nano-dipoles supporting surface plasmon polaritons (SPPs) integrated into a silicon-based Schottky-contact photodetector. Incident photons coupled to the array excite SPPs on the Au nanowires of the antennas which decay by creating "hot" carriers in the metal. The hot carriers may then be injected over the potential barrier at the Au-Si interface resulting in a photocurrent. High responsivities of 100 mA/W and practical minimum detectable powers of -12 dBm should be achievable in the infra-red (1310 nm). The device was then investigated for use as a biosensor by computing its bulk and surface sensitivities. Sensitivities of ∼ 250 nm/RIU (bulk) and ∼ 8 nm/nm (surface) in water are predicted. We identify the mode propagating and resonating along the nanowires of the antennas, we apply a transmission line model to describe the performance of the antennas, and we extract two useful formulas to predict their bulk and surface sensitivities. We prove that the sensitivities of dipoles are much greater than those of similar monopoles and we show that this difference comes from the gap in dipole antennas where electric fields are strongly enhanced.

  4. Alternative current source based Schottky contact with additional electric field

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2017-07-01

    Additional electric field (AEF) in the Schottky contacts (SC) that covered the peripheral contact region wide and the complete contact region narrow (as TMBS diode) SC. Under the influence of AEF is a redistribution of free electrons produced at certain temperatures of the semiconductor, and is formed the space charge region (SCR). As a result of the superposition of the electric fields SCR and AEF occurs the resulting electric field (REF). The REF is distributed along a straight line perpendicular to the contact surface, so that its intensity (and potential) has a minimum value on the metal surface and the maximum value at a great distance from the metal surface deep into the SCR. Under the influence of AEF as a sided force the metal becomes negative pole and semiconductor - positive pole, therefore, SC with AEF becomes an alternative current source (ACS). The Ni-nSi SC with different diameters (20-1000 μm) under the influence of the AEF as sided force have become ACS with electromotive force in the order of 0.1-1.0 mV, which are generated the electric current in the range of 10-9-10-7 A, flowing through the external resistance 1000 Ohm.

  5. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  6. Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts

    KAUST Repository

    Hu, Youfan

    2010-05-31

    A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Durability of PEDOT: PSS-pentacene Schottky diode

    International Nuclear Information System (INIS)

    Kang, K S; Lim, H K; Cho, K Y; Han, K J; Kim, Jaehwan

    2008-01-01

    The durability and failure cause of a polymer Schottky diode made with PEDOT : PSS-pentacene were investigated. A polymer Schottky diode was fabricated by dissolving pentacene in N-methylpyrrolidone (NMP) and mixing with PEDOT : PSS. Pentacene solution having a maximum concentration of approximately 9.7 mmoles was prepared by simply stirring the solution at room temperature for 36 h. As the pentacene concentration increased, the absorption of the broad UV regime increased dramatically. However, absorption peaks of pentacene at 301 and 260 nm were not observed for the PEDOT : PSS-pentacene. A three-layered polymer Schottky diode was fabricated and its current-voltage (I-V) characteristic was evaluated. The current was reduced by 7% in the first 50 min and then stabilized during biased electrical field sweeps. After 500 and 800 min, catastrophic failure occurred. FESEM images revealed that the electrode damage caused catastrophic failure of the Schottky diode. (fast track communication)

  8. Piezotronically modified double Schottky barriers in ZnO varistors.

    Science.gov (United States)

    Raidl, Nadine; Supancic, Peter; Danzer, Robert; Hofstätter, Michael

    2015-03-25

    Double Schottky barriers in ZnO are modified piezotronically by the application of mechanical stresses. New effects such as the enhancement of the potential barrier height and the increase or decrease of the natural barrier asymmetry are presented. Also, an extended model for the piezotronic modification of double Schottky barriers is given. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. A normal form approach to the theory of nonlinear betatronic motion

    International Nuclear Information System (INIS)

    Bazzani, A.; Todesco, E.; Turchetti, G.; Servizi, G.

    1994-01-01

    The betatronic motion of a particle in a circular accelerator is analysed using the transfer map description of the magnetic lattice. In the linear case the transfer matrix approach is shown to be equivalent to the Courant-Snyder theory: In the normal coordinates' representation the transfer matrix is a pure rotation. When the nonlinear effects due to the multipolar components of the magnetic field are taken into account, a similar procedure is used: a nonlinear change of coordinates provides a normal form representation of the map, which exhibits explicit symmetry properties depending on the absence or presence of resonance relations among the linear tunes. The use of normal forms is illustrated in the simplest but significant model of a cell with a sextupolar nonlinearity which is described by the quadratic Henon map. After recalling the basic theoretical results in Hamiltonian dynamics, we show how the normal forms describe the different topological structures of phase space such as KAM tori, chains of islands and chaotic regions; a critical comparison with the usual perturbation theory for Hamilton equations is given. The normal form theory is applied to compute the tune shift and deformation of the orbits for the lattices of the SPS and LHC accelerators, and scaling laws are obtained. Finally, the correction procedure of the multipolar errors of the LHC, based on the analytic minimization of the tune shift computed via the normal forms, is described and the results for a model of the LHC are presented. This application, relevant for the lattice design, focuses on the advantages of normal forms with respect to tracking when parametric dependences have to be explored. (orig.)

  10. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

    Science.gov (United States)

    Oshima, Takayoshi; Hashiguchi, Akihiro; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Oishi, Toshiyuki; Kasu, Makoto

    2017-08-01

    The electrical properties of Schottky barrier diodes (SBDs) on a (001) β-Ga2O3 substrate were characterized and correlated with wet etching-revealed crystal defects below the corresponding Schottky contacts. The etching process revealed etched grooves and etched pits, indicating the presence of line-shaped voids and small defects near the surface, respectively. The electrical properties (i.e., leakage currents, ideality factor, and barrier height) exhibited almost no correlation with the density of the line-shaped voids. This very weak correlation was reasonable considering the parallel positional relation between the line-shaped voids extending along the [010] direction and the (001) basal plane in which the voids are rarely exposed on the initial surface in contact with the Schottky metals. The distribution of small defects and SBDs with unusually large leakage currents showed similar patterns on the substrate, suggesting that these defects were responsible for the onset of fatal leak paths. These results will encourage studies on crystal defect management of (001) β-Ga2O3 substrates for the fabrication of devices with enhanced performance using these substrates.

  11. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  12. Kinetic description of self-field effects on laser and betatron emission in wiggler-pumped ion-channel free electron lasers

    International Nuclear Information System (INIS)

    Alimohamadi, M; Mehdian, H; Hasanbeigi, A

    2011-01-01

    The effects of self-fields on the free electron lasers (FELs) with a helical wiggler and ion-channel guiding are considered. The steady-state orbits for a single electron in this configuration are obtained. The rate of change of axial velocity with energy, the characteristic function Φ, is derived and studied numerically. A kinetic approach has been used to get the effects of self-field on the FEL and betatron gain formula in the low-gain-pre-pass limit. It is shown that betatron gain is smaller than FEL gain. We also found a gain decrement (enhancement), arising from diamagnetism (paramagnetism) generated by the self-magnetic field for group I (group II) orbits. It is interesting that the gain enhancement is found for the non-relativistic part of group II orbits. The FEL gain and betatron gain have also been investigated for different relativistic factors γ.

  13. Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

    KAUST Repository

    Shaikh, Parvez Abdul Ajij; Shi, Dong; Duran Retamal, Jose Ramon; Sheikh, Arif D.; Haque, Mohammed; Kang, Chen-Fang; He, Jr-Hau; Bakr, Osman; Wu, Tao

    2016-01-01

    Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single

  14. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu

    2009-12-09

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  15. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu; Yeh, Ping-Hung; Lu, Shih-Yuan; Wang, Zhong Lin

    2009-01-01

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  16. MD 2408: Study of Schottky Monitors for Q' Measurement at Injection

    CERN Document Server

    Tydecks, Tobias; Levens, Tom; Wendt, Manfred; Wenninger, Jorg; CERN. Geneva. ATS Department

    2018-01-01

    The Schottky monitors installed at the LHC enable the detection of Schottky noise of the two circulating proton / ion beams. From Schottky noise, beam parameters like tune, chromaticity, and relative emittance, can be extracted in a non-destructive and purely parasitic method of measurement. The primary goal of this MD was to study the Schottky monitors capability to reliably and accurately determine the beam chromaticities at injection energy. Furthermore, the possibility to track the beam emittance has been investigated.

  17. High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

    Science.gov (United States)

    Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

    2010-12-01

    High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

  18. Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant

    Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

  19. TCAD analysis of graphene silicon Schottky junction solar cell

    Science.gov (United States)

    Kuang, Yawei; Liu, Yushen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Feng, Jinfu

    2015-08-01

    The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

  20. Mott-Schottky analysis of thin ZnO films

    International Nuclear Information System (INIS)

    Windisch, Charles F. Jr.; Exarhos, Gregory J.

    2000-01-01

    Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

  1. Schottky contact analysis of photovoltaic chalcopyrite thin film absorbers

    International Nuclear Information System (INIS)

    Schlenker, E.; Mertens, V.; Parisi, J.; Reineke-Koch, R.; Koentges, M.

    2007-01-01

    Current-voltage and capacitance-voltage measurements serve to analyze thermally evaporated Al Schottky contacts on Cu(In, Ga)Se 2 based photovoltaic thin film devices, either taken as grown or etched in a bromine-methanol solution. The characteristics of the Schottky contacts on the as-grown films give evidence for some dielectric layer developing between the metal and the semiconductor. Etching the semiconductor surface prior to evaporation of the Al front contact yields a pure metal-semiconductor behavior, including effects that can be attributed to an additional diode at the Mo contact. Simulations confirm the experimental results

  2. Study of the Betatron and Compton X-ray sources produced in laser wakefield acceleration of electrons

    International Nuclear Information System (INIS)

    Ferri, Julien

    2016-01-01

    An ultra-short and ultra-intense laser pulse propagating in a low-density gas can accelerate in its wake a part of the electrons ionized from the gas to relativistic energies of a few hundreds of MeV over distances of a few millimeters only. During their acceleration, as a consequence of their transverse motion, these electrons emit strongly collimated X-rays in the forward direction, which are called betatron radiations. The characteristics of this source turn it into an interesting tool for high-resolution imagery.In this thesis, we explore three different axis to work on this source using simulations on the Particles-In-Cells codes CALDER and CALDER-Circ. We first study the creation of a betatron X-ray source with kilo-joule and pico-second laser pulses, for which duration and energy are then much higher than usual in this domain. In spite of the unusual laser parameters, we show that X-ray sources can still be generated, furthermore in two different regimes.In a second study, the generally observed discrepancies between experiments and simulations are investigated. We show that the use of realistic laser profiles instead of Gaussian ones in the simulations strongly degrades the performances of the laser-plasma accelerator and of the betatron source. Additionally, this leads to a better qualitative and quantitative agreement with the experiment. Finally, with the aim of improving the X-ray emission, we explore several techniques based on the manipulation of the plasma density profile used for acceleration. We find that both the use of a transverse gradient and of a density step increases the amplitude of the electrons transverse motions, and then increases the radiated energy. Alternatively, we show that this goal can also be achieved through the transition from a laser wakefield regime to a plasma wakefield regime induced by an increase of the density. The laser wakefield optimizes the electron acceleration whereas the plasma wakefield favours the X

  3. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-02-11

    For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

  4. High-temperature current conduction through three kinds of Schottky diodes

    International Nuclear Information System (INIS)

    Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

    2009-01-01

    Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Performance enhancement of polymer Schottky diode by doping pentacene

    International Nuclear Information System (INIS)

    Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan

    2009-01-01

    Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.

  6. Silicon Schottky photovoltaic diodes for solar energy conversion

    Science.gov (United States)

    Anderson, W. A.

    1975-01-01

    Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

  7. Particle detectors based on InP Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  8. Nu shifts in betatron oscillations from uniform perturbations in the presence of non-linear magnetic guide fields

    International Nuclear Information System (INIS)

    Crebbin, K.C.

    1985-05-01

    Uniform magnetic field perturbations cause a closed orbit distortion in a circular accelerator. If the magnetic guide field is non-linear these perturbations can also cause a Nu shift in the betatron oscillations. Such a shift in radial Nu values has been observed in the Bevalac while studying the low energy resonant extraction system. In the Bevalac, the radial perturbation comes from the quadrants being magnetically about 0.8% longer than 90 0 . The normal effect of this type of perturbation is a radial closed orbit shift and orbit distortion. The Nu shift, associated with this type of perturbation in the presence of a non-linear guide field, is discussed in this paper. A method of handling the non-linear n values is discussed as well as the mechanism for the associated Nu shift. Computer calculations are compared to measurements. 2 refs., 4 figs

  9. Relative measurements of fast neutron contamination in 18-MV photon beams from two linear accelerators and a betatron

    International Nuclear Information System (INIS)

    Gur, D.; Bukovitz, A.G.; Rosen, J.C.; Holmes, B.G.

    1979-01-01

    Fast neutron contamination in photon beams in the 20 MV range have been reported in recent years. In order to determine if the variations were due mainly to differences in measurement procedures, or inherent in the design of the accelerators, three different 18-MV (BJR) photon beams were compared using identical analytical techniques. The units studied were a Philips SL/75-20 and a Siemens Mevatron-20 linear accelerators and a Schimadzu betatron. Gamma spectroscopy of an activated aluminum foil was the method used. By comparing the relative amounts of neutron contamination, errors associated with absolute measurements such as detector efficiency and differences in activation foils were eliminated. Fast neutron contaminations per rad of x rays in a ratio of 6.7:3.7:1 were found for the Philips, Schimadzu and Siemens accelerators, respectively

  10. Pump requirements for betatron-generated femtosecond X-ray laser at saturation from inner-shell transitions

    International Nuclear Information System (INIS)

    Ribiere, M.; Grunenwald, J.; Ribeiro, P.; Sebban, S.; Phuoc, K.Ta; Gautier, J.; Kozlova, M.; Zeitoun, P.; Rousse, A.; Jacquemot, S.; Cheron, B.G.

    2012-01-01

    We study pump requirements to produce femtosecond X-ray laser pulses at saturation from inner-shell transitions in the amplified spontaneous emission regime. Since laser-based betatron radiation is considered as the pumping source, we first study the impact of the driving laser power on its intensity. Then we investigate the amplification behavior of the K-a transition of nitrogen at 3.2 nm (395 eV) from radiative transfer calculations coupled with kinetics modeling of the ion population densities. We show that the saturation regime may be experimentally achieved by using PW-class laser-accelerated electron bunches. Finally, we show that this X-ray laser scheme can be extended to heavier atoms and we calculate pump requirements to reach saturation at 1.5 nm (849 eV) from the K-a transition of neon. (authors)

  11. Organic modification of metal / semiconductor Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mendez Pinzon, H.A.

    2006-07-10

    In the present work a Metal / organic / inorganic semiconductor hybrid heterostructure (Ag / DiMe-PTCDI / GaAs) was built under UHV conditions and characterised in situ. The aim was to investigate the influence of the organic layer in the surface properties of GaAs(100) and in the electrical response of organic-modified Ag / GaAs Schottky diodes. The device was tested by combining surface-sensitive techniques (Photoemission spectroscopy and NEXAFS) with electrical measurements (current-voltage, capacitance-voltage, impedance and charge transient spectroscopies). Core level examination by PES confirms removal of native oxide layers on sulphur passivated (S-GaAs) and hydrogen plasma treated GaAs(100) (H+GaAs) surfaces. Additional deposition of ultrathin layers of DiMe-PTCDI may lead to a reduction of the surface defects density and thereby to an improvement of the electronic properties of GaAs. The energy level alignment through the heterostructure was deduced by combining UPS and I-V measurements. This allows fitting of the I-V characteristics with electron as majority carriers injected over a barrier by thermionic emission as a primary event. For thin organic layers (below 8 nm thickness) several techniques (UPS, I-V, C-V, QTS and AFM) show non homogeneous layer growth, leading to formation of voids. The coverage of the H+GaAs substrate as a function of the nominal thickness of DiMe-PTCDI was assessed via C-V measurements assuming a voltage independent capacitance of the organic layer. The frequency response of the device was evaluated through C-V and impedance measurements in the range 1 kHz-1 MHz. The almost independent behaviour of the capacitance in the measured frequency range confirmed the assumption of a near geometrical capacitor, which was used for modelling the impedance with an equivalent circuit of seven components. From there it was found a predominance of the space charge region impedance, so that A.C. conduction can only takes place through the

  12. Real Time Management of the AD Schottky/BTF Beam Measurement

    CERN Document Server

    Angoletta, Maria Elena

    2003-01-01

    The AD Schottky and BTF system relies on rapid acquisition and analysis of beam quantisation noise during the AD cycle which is based on an embedded receiver and digital signal processing board hosted in a VME system. The software running in the VME sets up the embedded system and amplifiers, interfaces to the RF and control system, manages the execution speed and sequence constraints with respect to the various operating modes, schedules measurements during the AD cycle and performs post processing taking into account the beam conditions in an autonomous way. The operating modes of the instrument dynamically depend on a detailed configuration, the beam parameters during the AD cycle and optional user interaction. Various subsets of the processed data are available on line and in quasi real time for beam intensity, momentum spread and several spectrum types, which form an important part of AD operation today.

  13. Real time management of the AD Schottky/BTF beam measurement system

    CERN Document Server

    Ludwig, M

    2003-01-01

    The AD Schottky and BTF system relies on rapid acquisition and analysis of beam quantisation noise during the AD cycle which is based on an embedded receiver and digital signal processing board hosted in a VME system. The software running in the VME sets up the embedded system and amplifiers, interfaces to the RF and control system, manages the execution speed and sequence constraints with respect to the various operating modes, schedules measurements during the AD cycle and performs post processing taking into account the beam conditions in an autonomous way. The operating modes of the instrument dynamically depend on a detailed configuration, the beam parameters during the AD cycle and optional user interaction. Various subsets of the processed data are available on line and in quasi real time for beam intensity, momentum spread and several spectrum types, which form an important part of AD operation today.

  14. Formation and Schottky barrier height of Au contacts to CuInSe2

    International Nuclear Information System (INIS)

    Nelson, A.J.; Gebhard, S.; Kazmerski, L.L.; Colavita, E.; Engelhardt, M.; Hoechst, H.

    1991-01-01

    Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the Au/CuInSe 2 interface. Au overlayers were deposited in steps on single-crystal p and n-type CuInSe 2 at ambient temperature. Reflection high-energy electron diffraction analysis before and during growth of the Au overlayers indicated that the Au overlayer was amorphous. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the In 4d and Se 3d core lines. The results were used to correlate the interface chemistry with the electronic structure at these interfaces and to directly determine the Au/CuInSe 2 Schottky barrier height

  15. Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode

    International Nuclear Information System (INIS)

    Pandey, Rajiv K.; Singh, Arun Kumar; Prakash, Rajiv

    2013-01-01

    We report formation of polycarbazole (PCz)–graphene nanocomposite over indium tin oxide (ITO) coated glass substrate using electrochemical technique for fabrication of high performance Schottky diodes. The synthesized nanocomposite is characterized before fabrication of devices for confirmation of uniform distribution of graphene nanosheets in the polymer matrix. Pure PCz and PCz-graphene nanocomposites based Schottky diodes are fabricated of configuration Al/PCz/ITO and Al/PCz-graphene nanocomposite/ITO, respectively. The current density–voltage (J-V) characteristics and diode performance parameters (such as the ideality factor, barrier height, and reverse saturation current density) are compared under ambient condition. Al/PCz-graphene nanocomposite/ITO device exhibits better ideality factor in comparison to the device formed using pure PCz. It is also observed that the Al/PCz-graphene nanocomposite/ITO device shows large forward current density and low turn on voltage in comparison to Al/PCz/ITO device

  16. Monte Carlo modelling of Schottky diode for rectenna simulation

    Science.gov (United States)

    Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

    2017-09-01

    Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

  17. A charge-based model of Junction Barrier Schottky rectifiers

    Science.gov (United States)

    Latorre-Rey, Alvaro D.; Mudholkar, Mihir; Quddus, Mohammed T.; Salih, Ali

    2018-06-01

    A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.

  18. Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode

    International Nuclear Information System (INIS)

    Liu Yebing; Hu Rui; Yang Yuqing; Wang Guanquan; Luo Shunzhong; Liu Ning

    2012-01-01

    An Au–Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p–n junction. The results show that the Schottky diode had a higher I sc and harder radiation tolerance but lower V oc than the p–n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries. - Highlights: ► The Schottky diode was used as the converter of the betavoltaic battery. ► The radiation damage of converter was accelerated by using alpha particles. ► The Schottky diode has higher radiation resistance than that of the p–n junction. ► The Schottky diode could still be a promising converter of the betavoltaic battery.

  19. Influence of interface inhomogeneities in thin-film Schottky diodes

    Science.gov (United States)

    Wilson, Joshua; Zhang, Jiawei; Li, Yunpeng; Wang, Yiming; Xin, Qian; Song, Aimin

    2017-11-01

    The scalability of thin-film transistors has been well documented, but there have been very few investigations into the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150, and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness caused a dramatic deterioration of the current-voltage characteristics, most notably increasing the reverse current by nearly five orders of magnitude. Furthermore, the forward characteristics display an increase in the ideality factor and a reduction in the barrier height. The origins of this phenomenon have been elucidated using device simulations. First, when the semiconductor layer is fully depleted, the electric field increases with the reducing thickness, leading to an increased diffusion current. However, the effects of diffusion only offer a small contribution to the huge variations in reverse current seen in the experiments. To fully explain this effect, the role of inhomogeneities in the Schottky barrier height has been considered. Contributions from lower barrier regions (LBRs) are found to dominate the reverse current. The conduction band minimum below these LBRs is strongly dependent upon thickness and bias, leading to reverse current variations as large as several orders of magnitude. Finally, it is demonstrated that the thickness dependence of the reverse current is exacerbated as the magnitude of the inhomogeneities is increased and alleviated in the limit where the LBRs are large enough not to be influenced by the adjacent higher barrier regions.

  20. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    OpenAIRE

    Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.

    2015-01-01

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer graphene onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decr...

  1. Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    Bisewski Damian

    2016-09-01

    Full Text Available This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

  2. Metal-semiconductor Schottky barrier junctions and their applications

    CERN Document Server

    1984-01-01

    The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal­ semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the la...

  3. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  4. Silver nanowires-templated metal oxide for broadband Schottky photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Malkeshkumar; Kim, Hong-Sik; Kim, Joondong, E-mail: joonkim@inu.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772 (Korea, Republic of); Park, Hyeong-Ho [Applied Device and Material Lab., Device Technology Division, Korea Advanced Nano Fab Center (KANC), Suwon 443270 (Korea, Republic of)

    2016-04-04

    Silver nanowires (AgNWs)-templated transparent metal oxide layer was applied for Si Schottky junction device, which remarked the record fastest photoresponse of 3.4 μs. Self-operating AgNWs-templated Schottky photodetector showed broad wavelength photodetection with high responsivity (42.4 A W{sup −1}) and detectivity (2.75 × 10{sup 15} Jones). AgNWs-templated indium-tin-oxide (ITO) showed band-to-band excitation due to the internal photoemission, resulting in significant carrier collection performances. Functional metal oxide layer was formed by AgNWs-templated from ITO structure. The grown ITO above AgNWs has a cylindrical shape and acts as a thermal protector of AgNWs for high temperature environment without any deformation. We developed thermal stable AgNWs-templated transparent oxide devices and demonstrated the working mechanism of AgNWs-templated Schottky devices. We may propose the high potential of hybrid transparent layer design for various photoelectric applications, including solar cells.

  5. Process for preparing schottky diode contacts with predetermined barrier heights

    Science.gov (United States)

    Chang, Y. Austin; Jan, Chia-Hong; Chen, Chia-Ping

    1996-01-01

    A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

  6. Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

    Science.gov (United States)

    Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

    2018-04-01

    A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

  7. Theses. Beam studies for the CERN antiproton decelerator and a new interpretation of the resonance theory for betatron motion

    Energy Technology Data Exchange (ETDEWEB)

    De Ninno, G

    1999-07-01

    The two parts of the thesis are a mission-oriented task devoted to solve some practical problems of the Antiproton Decelerator (AD) project at CERN, and a theoretical study leading to a new method for representing and compensating betatron resonances. The AD is a new machine (at the moment under commissioning at CERN) that will allow the collection and the deceleration of an antiproton beam from 3.5 GeV/c down to 100 MeV/c (the momentum favoured for the foreseen physics experiments). The need to employ the AD magnets over a wide range required a careful study of their characteristics. The presence of a solenoid inside the AD electron cooling device generates linear coupling between the transverse degrees of freedom of the single-particle motion. Coupling can lead to operational problems and therefore a compensation scheme had tobe designed. The long-standing problem has been solved of how to establish a relationship between the two standard methods for dealing with linear coupling: the matrix approach and the Hamiltonian approach. The bridge was built by including in the Hamiltonian approach in the high frequency part of the perturbative Hamiltonian due to coupling. The procedure was generalised to the nonlinear case and, a new method was proposed for dealing both with linear and nonlinear resonances. (author)

  8. Theses. Beam studies for the CERN antiproton decelerator and a new interpretation of the resonance theory for betatron motion

    International Nuclear Information System (INIS)

    De Ninno, G.

    1999-01-01

    The two parts of the thesis are a mission-oriented task devoted to solve some practical problems of the Antiproton Decelerator (AD) project at CERN, and a theoretical study leading to a new method for representing and compensating betatron resonances. The AD is a new machine (at the moment under commissioning at CERN) that will allow the collection and the deceleration of an antiproton beam from 3.5 GeV/c down to 100 MeV/c (the momentum favoured for the foreseen physics experiments). The need to employ the AD magnets over a wide range required a careful study of their characteristics. The presence of a solenoid inside the AD electron cooling device generates linear coupling between the transverse degrees of freedom of the single-particle motion. Coupling can lead to operational problems and therefore a compensation scheme had to be designed. The long-standing problem has been solved of how to establish a relationship between the two standard methods for dealing with linear coupling: the matrix approach and the Hamiltonian approach. The bridge was built by including in the Hamiltonian approach in the high frequency part of the perturbative Hamiltonian due to coupling. The procedure was generalised to the nonlinear case and, a new method was proposed for dealing both with linear and nonlinear resonances. (author)

  9. Effects of electron-irradiation on electrical properties of AgCa/Si Schottky diodes

    International Nuclear Information System (INIS)

    Harmatha, L.; Zizka, M.; Sagatova, A.; Nemec, M.; Hybler, P.

    2013-01-01

    This contribution presents the results of the current-voltage I-V and the capacitance-voltage C-V measurement on the Schottky diodes with the AgCa gate on the silicon n-type substrate. The Si substrate was irradiated by 5 MeV electrons with a different dose value before the Schottky diode preparation. (authors)

  10. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  11. Schottky barrier CdTe(Cl) detectors for planetary missions

    International Nuclear Information System (INIS)

    Eisen, Yosef; Floyd, Samuel

    2002-01-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm x 2mm x 1mm and segmented monolithic 3cm x 3 cm x 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm x 2mm x 1mm CdTe operating at -30 degree sign C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm x 3cm x 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed

  12. High-quality electron beam generation and bright betatron radiation from a cascaded laser wakefield accelerator (Conference Presentation)

    Science.gov (United States)

    Liu, Jiansheng; Wang, Wentao; Li, Wentao; Qi, Rong; Zhang, Zhijun; Yu, Changhai; Wang, Cheng; Liu, Jiaqi; Qing, Zhiyong; Ming, Fang; Xu, Yi; Leng, Yuxin; Li, Ruxin; Xu, Zhizhan

    2017-05-01

    betatron radiation via manipulating the e-beam transverse oscillation in the wakefield. Very brilliant quasi-monochromatic betatron x-rays in tens of keV with significant enhancement both in photon yield and peak energy have been generated. Besides, by employing a self-synchronized all-optical Compton scattering scheme, in which the electron beam collided with the intense driving laser pulse via the reflection of a plasma mirror, we produced tunable quasi-monochromatic MeV γ-rays ( 33% full-width at half-maximum) with a peak brilliance of 3.1×1022 photons s-1 mm-2 mrad-2 0.1% BW at 1 MeV, which is one order of magnitude higher than ever reported value in MeV regime to the best of our knowledge. 1. J. S. Liu, et al., Phys. Rev. Lett. 107, 035001 (2011). 2. X. Wang, et al., Nat. Commun. 4, 1988 (2013). 3. W. P. Leemans, et al., Phys. Rev. Lett. 113, 245002 (2014) 4. W. T. Wang et al., Phys. Rev. Lett. 117, 124801 (2016). 5. Z. J. Zhang et al., Phys. Plasmas 23, 053106 (2016). 6. C. H. Yu et al., Sci. Rep. 6, 29518 (2016).

  13. Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

    Science.gov (United States)

    Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

    2017-06-01

    The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

  14. Singular equivariant spectral asymptotics of Schroedinger operators in Rn and resonances of Schottky surfaces

    International Nuclear Information System (INIS)

    Weich, Tobias

    2014-01-01

    This work consists of four self-containedly presented parts. In the first part we prove equivariant spectral asymptotics for h-pseudo-differential operators for compact orthogonal group actions generalizing results of El-Houakmi and Helffer (1991) and Cassanas (2006). Using recent results for certain oscillatory integrals with singular critical sets (Ramacher 2010) we can deduce a weak equivariant Weyl law. Furthermore, we can prove a complete asymptotic expansion for the Gutzwiller trace formula without any additional condition on the group action by a suitable generalization of the dynamical assumptions on the Hamilton flow. In the second and third part we study resonance chains which have been observed in many different physical and mathematical scattering problems. In the second part we present a mathematical rigorous study of the resonance chains on three funneled Schottky surfaces. We prove the analyticity of the generalized zeta function which provide the central mathematical tool for understanding the resonance chains. Furthermore we prove for a fixed ratio between the funnel lengths and in the limit of large lengths that after a suitable rescaling the resonances in a bounded domain align equidistantly along certain lines. The position of these lines is given by the zeros of an explicit polynomial which only depends on the ratio of the funnel lengths. In the third part we provide a unifying approach to these resonance chains by generalizing dynamical zeta functions. By means of a detailed numerical study we show that these generalized zeta functions explain the mechanism that creates the chains of quantum resonance and classical Ruelle resonances for 3-disk systems as well as geometric resonances on Schottky surfaces. We also present a direct system-intrinsic definition of the continuous lines on which the resonances are strung together as a projection of an analytic variety. Additionally, this approach shows that the existence of resonance chains is

  15. All-back-Schottky-contact thin-film photovoltaics

    Science.gov (United States)

    Nardone, Marco

    2016-02-01

    The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

  16. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

    Science.gov (United States)

    Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

    2017-06-01

    We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

  17. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    International Nuclear Information System (INIS)

    Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M.; Koeck, Franz A. M.; Nemanich, Robert J.

    2016-01-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco ® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  18. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Science.gov (United States)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  19. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

    2016-06-14

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

  20. The nature of electrical interaction of Schottky contacts

    International Nuclear Information System (INIS)

    Torkhov, N. A.

    2011-01-01

    Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances ( i,j ), concentration of doping impurities in the semiconductor N D , and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height φ b ). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the “dead” zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the “dead” zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.

  1. Electrical characterization of organic-on-inorganic semiconductor Schottky structures

    International Nuclear Information System (INIS)

    Guellue, Oe; Tueruet, A; Asubay, S

    2008-01-01

    We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Φ b ) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I-V characteristics. It was seen that the value of 1.11 eV obtained for Φ b for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Φ b by influencing the space charge region of InP

  2. Measurements of Effective Schottky Barrier in Inverse Extraordinary Optoconductance Structures

    Science.gov (United States)

    Tran, L. C.; Werner, F. M.; Solin, S. A.; Gilbertson, Adam; Cohen, L. F.

    2013-03-01

    Individually addressable optical sensors with dimensions as low as 250nm, fabricated from metal semiconductor hybrid structures (MSH) of AuTi-GaAs Schottky interfaces, display a transition from resistance decreasing with intensity in micron-scale sensors (Extraordinary Optoconductance, EOC) to resistance increasing with intensity in nano-scale sensors (Inverse Extraordinary Optoconductance I-EOC). I-EOC is attributed to a ballistic to diffusive crossover with the introduction of photo-induced carriers and gives rise to resistance changes of up to 9462% in 250nm devices. We characterize the photo-dependence of the effective Schottky barrier in EOC/I-EOC structures by the open circuit voltage and reverse bias resistance. Under illumination by a 5 mW, 632.8 nm HeNe laser, the barrier is negligible and the Ti-GaAs interface becomes Ohmic. Comparing the behavior of two devices, one with leads exposed, another with leads covered by an opaque epoxy, the variation in Voc with the position of the laser can be attributed to a photovoltaic effect of the lead metal and bulk GaAs. The resistance is unaffected by the photovoltaic offset of the leads, as indicated by the radial symmetry of 2-D resistance maps obtained by rastering a laser across EOC/IEOC devices. SAS has a financial interest in PixelEXX, a start-up company whose mission is to market imaging arrays.

  3. Explanation of the barrier heights of graphene Schottky contacts by the MIGS-and-electronegativity concept

    Science.gov (United States)

    Mönch, Winfried

    2016-09-01

    Graphene-semiconductor contacts exhibit rectifying properties and, in this respect, they behave in exactly the same way as a "conventional" metal-semiconductor or Schottky contacts. It will be demonstrated that, as often assumed, the Schottky-Mott rule does not describe the reported barrier heights of graphene-semiconductor contacts. With "conventional" Schottky contacts, the same conclusion was reached already in 1940. The physical reason is that the Schottky-Mott rule considers no interaction between the metal and the semiconductor. The barrier heights of "conventional" Schottky contacts were explained by the continuum of metal-induced gap states (MIGSs), where the differences of the metal and semiconductor electronegativities describe the size and the sign of the intrinsic electric-dipoles at the interfaces. It is demonstrated that the MIGS-and-electronegativity concept unambiguously also explains the experimentally observed barrier heights of graphene Schottky contacts. This conclusion includes also the barrier heights reported for MoS2 Schottky contacts with "conventional" metals as well as with graphene.

  4. Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

    International Nuclear Information System (INIS)

    Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

    1982-01-01

    Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

  5. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  6. Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

    Science.gov (United States)

    Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

    2010-01-01

    This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

  7. Electrical characterization of MEH-PPV based Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Nimith, K. M., E-mail: nimithkm@gmail.com; Satyanarayan, M. N., E-mail: satya-mn@nitk.edu.in; Umesh, G., E-mail: umesh52@gmail.com [Optoelectronics Laboratory (OEL), Department of Physics, National Institute of Technology Karnataka (NITK),Surathkal, PO Srinivasnagar, Mangalore, DK-575025 (India)

    2016-05-06

    MEH-PPV Schottky diodes with and without Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) have been fabricated and characterized. The highlight of this work is that all the fabrication and characterization steps had been carried out in the ambient conditions and the device fabrication was done without any UV-Ozone surface treatment of ITO anodes. Current Density-Voltage characteristics shows that the addition of hole injection layer (HIL) enhances the charge injection into the polymer layer by reducing the energy barrier across the Indium Tin Oxide (ITO)-Organic interface. The rectification ratio increases to 2.21 from 0.76 at 5V for multilayer devices compared to single layer devices. Further we investigated the effect of an alkali metal fluoride (LiF) by inserting a thin layer in between the organic layer and Aluminum (Al) cathode. The results of these investigations will be discussed in detail.

  8. Electrical characterization of Au/ZnO/Si Schottky contact

    International Nuclear Information System (INIS)

    Asghar, M; Mahmood, K; Faisal, M; Hasan, M A

    2013-01-01

    In this study, temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Au/ZnO/Si Schottky barrier diode in the range 150 – 400K. The room temperature values for ideality factor and barrier height found to be 2.68 and 0.68 eV respectively. From the temperature dependence of I–V, the ideality factor was observed to decrease with increasing temperature and barrier height increased with increasing temperature. The observed barrier height trend was disagreeing with the negative temperature coefficient for semiconductor. A deep defect with activation energy 0.57 eV below the conduction band was observed using the saturation current plot and deep level transient spectroscopy.

  9. The physics and chemistry of the Schottky barrier height

    International Nuclear Information System (INIS)

    Tung, Raymond T.

    2014-01-01

    The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface

  10. Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

    Science.gov (United States)

    Kim, Gun Hwan; Lee, Jong Ho; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong

    2012-10-24

    The electrical performances of Pt/TiO(2)/Ti/Pt stacked Schottky-type diode (SD) was systematically examined, and this performance is dependent on the chemical structures of the each layer and their interfaces. The Ti layers containing a tolerable amount of oxygen showed metallic electrical conduction characteristics, which was confirmed by sheet resistance measurement with elevating the temperature, transmission line measurement (TLM), and Auger electron spectroscopy (AES) analysis. However, the chemical structure of SD stack and resulting electrical properties were crucially affected by the dissolved oxygen concentration in the Ti layers. The lower oxidation potential of the Ti layer with initially higher oxygen concentration suppressed the oxygen deficiency of the overlying TiO(2) layer induced by consumption of the oxygen from TiO(2) layer. This structure results in the lower reverse current of SDs without significant degradation of forward-state current. Conductive atomic force microscopy (CAFM) analysis showed the current conduction through the local conduction paths in the presented SDs, which guarantees a sufficient forward-current density as a selection device for highly integrated crossbar array resistive memory.

  11. The properties of transparent TiO2 films for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Sung-Ho Park

    2017-08-01

    Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

  12. Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

    Science.gov (United States)

    Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

    2017-04-01

    Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

  13. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

  14. High Power Ga2O3-based Schottky Diode, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Program will develop a new generation of radiation hard high-power high-voltage Ga2O3-based Schottky diode, which is suitable for applications in the space...

  15. Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

    Science.gov (United States)

    Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

    2018-04-01

    In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

  16. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

  17. Integration of organic based Schottky junctions for crossbar non-volatile memory applications

    DEFF Research Database (Denmark)

    Katsia, E.; Tallarida, G.; Ferrari, S.

    2008-01-01

    Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current...

  18. Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

    Science.gov (United States)

    Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

    2018-05-01

    The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

  19. Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Vali, Indudhar Panduranga [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Shetty, Pramoda Kumara, E-mail: pramod.shetty@manipal.edu [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Mahesha, M.G. [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, V.C.; Dwivedi, Jishnu [Raja Ramanna Centre for Advanced Technology, Department of Atomic Energy, Government of India, Indore 452012 (India); Choudhary, R.J. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

    2017-06-15

    Highlights: • Tuning of Schottky barrier height has been achieved by electron beam irradiation at different doses on n-Si wafer prior to the fabrication of Schottky contact. • The XPS analyses have shown irradiation induced defects and the formation of several localized chemical states in Si/SiOx interface that influences the Schottky barrier height. • High ideality factor indicates metal-insulator-semiconductor configuration of the Schottky diode and the inhomogeneous nature of the Schottky barrier height. • The modifications in I–V characteristics have been observed as a function of electron dose. This is caused due to changes in the Schottky diode parameters and different transport mechanisms. - Abstract: The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (Φ{sub B}), ideality factor (n) and series resistance (R{sub s}). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of Φ{sub B} was observed as a function of EBI dose. The improved n with increased Φ{sub B} is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune

  20. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

    Science.gov (United States)

    Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

    2014-08-21

    On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

  1. Walter Schottky. Atom-theorist and electrotechnician. His life and work until the year 1941; Walter Schottky. Atomtheoretiker und Elektrotechniker. Sein Leben und Werk bis ins Jahr 1941

    Energy Technology Data Exchange (ETDEWEB)

    Serchinger, Reinhard W.

    2008-07-01

    In this first scientific biography of Walter Schottky at the one hand the origin of his scientific and technical works is reproduced and put in the physical-historical connection of his time. At the other hand his special role in the research strategy of the Siemens company becomes clear, which could in the framework of this research project for the first time be identified. Also psychological aspects were essentially included in the study, because else the binding of the particular more corresponding to an ivory-tower than and industrial physicist personality of Schottky to the Siemens trust not would be understandable. The example of Walter Schottky shows the importance of the researching individuum, which until today undoubtly can be an important element of company-internal innovation processes not only contrarily but also in the transition to scientific team work.

  2. Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

    NARCIS (Netherlands)

    Hajlasz, Marcin; Donkers, Johan J.T.M.; Pandey, Saurabh; Hurkx, Fred; Hueting, Raymond J.E.; Gravesteijn, Dirk J.

    2017-01-01

    In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress

  3. Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  4. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    OpenAIRE

    H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER

    2014-01-01

    The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semicondu...

  5. Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

    Science.gov (United States)

    Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre L.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.; hide

    2016-01-01

    Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

  6. Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

    Science.gov (United States)

    Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

    2018-03-01

    It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  7. Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

    Science.gov (United States)

    Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

    2013-01-01

    When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

  8. Electrical transport measurements and degradation of graphene/n-Si Schottky junction diodes

    International Nuclear Information System (INIS)

    Park, No-Won; Lee, Won-Yong; Lee, Sang-Kwon; Koh, Jung-Hyuk; Kim, Dong-Joo; Kim, Gil-Sung; Hyung, Jung-Hwan; Hong, Chang-Hee; Kim, Keun-Soo

    2015-01-01

    We report on the electrical properties, such as the ideality factors and Schottky barrier heights, that were obtained by using current density - voltage (J - V ) and capacitance - voltage (C - V ) characteristics. To fabricate circularly- and locally-contacted Au/Gr/n-Si Schottky diode, we deposited graphene through the chemical vapor deposition (CVD) growth technique, and we employed reactive ion etching to reduce the leakage current of the Schottky diodes. The average values of the barrier heights and the ideality factors from the J .V characteristics were determined to be ∼0.79 ± 0.01 eV and ∼1.80 ± 0.01, respectively. The Schottky barrier height and the doping concentration from the C - V measurements were ∼0.85 eV and ∼1.76 x 10 15 cm -3 , respectively. From the J - V characteristics, we obtained a relatively low reverse leakage current of ∼2.56 x 10 -6 mA/cm -2 at -2 V, which implies a well-defined rectifying behavior. Finally, we found that the Gr/n-Si Schottky diodes that were exposed to ambient conditions for 7 days exhibited a ∼3.2-fold higher sheet resistance compared with the as-fabricated Gr/n-Si diodes, implying a considerable electrical degradation of the Gr/n-Si Schottky diodes.

  9. Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

    International Nuclear Information System (INIS)

    Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

    2010-01-01

    This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Tuning the Schottky contacts in the phosphorene and graphene heterostructure by applying strain.

    Science.gov (United States)

    Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Lin-Zhi; Caii, Meng-Qiu

    2016-07-20

    The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure can be tuned from p-type to n-type by the in-plane compressive strains from -2% to -4%. After analyzing the total band structure and density of states of P atom orbitals, we find that the Schottky barrier height (SBH) is determined by the P-pz orbitals. What is more, the variation of the work function of the phosphorene monolayer and the graphene electrode and the Fermi level shift are the nature of the transition of Schottky barrier from n-type Schottky contact to p-type Schottky contact in the phosphorene and graphene heterostructure under different in-plane strains. We speculate that these are general results of tuning of the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure by controlling the in-plane compressive strains to obtain a promising method to design and fabricate a phosphorene-graphene based field effect transistor.

  11. Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

    Science.gov (United States)

    2016-12-01

    ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

  12. New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

    Science.gov (United States)

    Ha, Min-Woo; Lee, Seung-Chul; Choi, Young-Hwan; Kim, Soo-Seong; Yun, Chong-Man; Han, Min-Koo

    2006-10-01

    A new GaN Schottky barrier diode employing a trench structure, which is proposed and fabricated, successfully decreases a forward voltage drop without sacrificing any other electric characteristics. The trench is located in the middle of Schottky contact during a mesa etch. The Schottky metal of Pt/Mo/Ti/Au is e-gun evaporated on the 300 nm-deep trench as well as the surface of the proposed GaN Schottky barrier diode. The trench forms the vertical Au Schottky contact and lateral Pt Schottky contact due to the evaporation sequence of Schottky metal. The forward voltage drops of the proposed diode and conventional one are 0.73 V and 1.25 V respectively because the metal work function (5.15 eV) of the vertical Au Schottky contact is considerably less than that of the lateral Pt Schottky contact (5.65 eV). The proposed diode exhibits the low on-resistance of 1.58 mΩ cm 2 while the conventional one exhibits 8.20 mΩ cm 2 due to the decrease of a forward voltage drop.

  13. Delayed radionecrosis of the cerebral hemispheres following betatron electron beam irradiation for scalp cancer. Pathological and clinical findings in one case

    International Nuclear Information System (INIS)

    Buge, A.; Escourolle, R.; Rancurel, G.; Gray, F.; Pertuiset, B.F.

    1979-01-01

    Three years following an irradiation by the Betatron's electron beam of an epithelioma in left parieto occipital area of the scalp in a female patient aged 77, early suffering from high blood pressure, a fatal pseudo-tumoral brain necrosis occurs presenting as a rapidly increasing from of Wernicke's aphasia. The necropsy shows intense radionecrosis lesions of the brain and the bone, free of any parenchymatous malignant proliferation note-wortly for the striking density of microvascular changes as previously described in radiation therapy. The case observed some years ago, allows to definite again the limits doses of the extracranial irradiations now estimated at 1760 rets. That is the 'Nominal Standard Dose' (NSD) measured by rets and taking into account the number of seances (N) and the duration of irradiation (T) which would be to take the place of 'the total dose' (D) (rads). These dosimetric criteria themselves must be adjusted to the age and the vascular features of each patient [fr

  14. Delayed radionecrosis of the cerebral hemispheres following betatron electron beam irradiation for scalp cancer. Pathological and clinical findings in one case

    Energy Technology Data Exchange (ETDEWEB)

    Buge, A; Escourolle, R; Rancurel, G; Gray, F; Pertuiset, B F [Clinique Neurologique de la Salpetriere, 75 - Paris (France)

    1979-01-01

    Three years following an irradiation by the Betatron's electron beam of an epithelioma in left parieto occipital area of the scalp in a female patient aged 77, early suffering from high blood pressure, a fatal pseudo-tumoral brain necrosis occurs presenting as a rapidly increasing from of Wernicke's aphasia. The necropsy shows intense radionecrosis lesions of the brain and the bone, free of any parenchymatous malignant proliferation note-wortly for the striking density of microvascular changes as previously described in radiation therapy. The case observed some years ago, allows to definite again the limits doses of the extracranial irradiations now estimated at 1760 rets. That is the 'Nominal Standard Dose' (NSD) measured by rets and taking into account the number of seances (N) and the duration of irradiation (T) which would be to take the place of 'the total dose' (D) (rads). These dosimetric criteria themselves must be adjusted to the age and the vascular features of each patient.

  15. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

    Science.gov (United States)

    Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

    2013-01-30

    Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

  16. Thermionic field emission in gold nitride Schottky nanodiodes

    Science.gov (United States)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

    2012-11-01

    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

  17. Carrier velocity effect on carbon nanotube Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Fathi, Amir, E-mail: fathi.amir@hotmail.com [Urmia University, Department of Electrical Engineering, Microelectronic Research Laboratory (Iran, Islamic Republic of); Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir; Ismail, Razali, E-mail: Razali@fke.utm.my [University Technology Malaysia, Department of Electronic Engineering (Malaysia)

    2016-08-15

    One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to the small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.

  18. Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode

    International Nuclear Information System (INIS)

    Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Petwal, V.C.

    2016-01-01

    In the high energy physics experiments, silicon based diodes are used to fabricate radiation detector to detect the charged particles. The Schottky barrier diodes have been studied extensively to understand the behavior of metal semiconductor interface, since such interfaces have been utilized as typical contacts in silicon devices. Because of surface states, interfacial layer, microscopic clusters of metal-semiconductor phases and other effects, it is difficult to fabricate junctions with barriers near the ideal values predicted from the work functions of the two isolated materials, therefore measured barrier heights are used in the device design. In this work, the Al/n-Si Schottky contacts are employed to study the diode parameters (Schottky barrier height and ideality factor), where the Schottky contacts were fabricated on electron beam irradiated silicon wafers. The interface behavior between electron irradiated Si wafer and post metal deposition is so far not reported. This method could be an alternative way to tailor the Schottky barrier height (SBH) without subjecting semiconductor sample to pre chemical and/or post heat treatments during fabrication

  19. Research on the electrical characteristics of the Pt/CdS Schottky diode

    Science.gov (United States)

    Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

    2013-08-01

    With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

  20. Transverse Schottky spectra and beam transfer functions of coasting ion beams with space charge

    International Nuclear Information System (INIS)

    Paret, Stefan

    2010-01-01

    A study of the transverse dynamics of coasting ion beams with moderate space charge is presented in this work. From the dispersion relation with linear space charge, an analytic model describing the impact of space charge on transverse beam transfer functions (BTFs) and the stability limits of a beam is derived. The dielectric function obtained in this way is employed to describe the transverse Schottky spectra with linear space charge as well. The difference between the action of space charge and impedances is highlighted. The setup and the results of an experiment performed in the heavy ion synchrotron SIS-18 at GSI to detect space-charge effects at different beam intensities are explicated. The measured transverse Schottky spectra and BTFs are compared with the linear space-charge model. The stability diagrams constructed from the BTFs are presented. The space-charge parameters evaluated from the Schottky and BTF measurements are compared with estimations based on measured beam parameters. The impact of collective effects on the Schottky and BTF diagnostics is also investigated through numerical simulations. For this purpose the self-field of beams with linear and non-linear transverse density-distributions is computed on a twodimensional grid. The noise of the random particle distribution causes fluctuations of the dipole moment of the beam which produce the Schottky spectrum. BTFs are simulated by exciting the beam with transverse kicks. The simulation results are used to verify the space-charge model. (orig.)

  1. Longitudinal schottky spectra of a bunched Ne10+ ion beam at the CSRe

    International Nuclear Information System (INIS)

    Wen Weiqiang; Ma Xinwen; Zhang Dacheng

    2013-01-01

    The longitudinal Schottky spectra of a radio-frequency (RF) bunched and electron cooled 22Ne 10+ ion beam at 70 MeV/u have been studied by a newly installed resonant Schottky pick-up at the experimental cooler storage ring (CSRe), at IMP. For an RF-bunched ion beam, a longitudinal momentum spread of Δp/p=1.6 × 10 -5 has been reached with less than 107 stored ions. The reduction of momentum spread compared with a coasting ion beam was observed from Schottky noise signal of the bunched ion beam. In order to prepare the future laser cooling experiment at the CSRe, the RF-bunching power was modulated at 25 th , 50 th and 75 th harmonic of the revolution frequency, effective bunching amplitudes were extracted from the Schottky spectrum analysis. Applications of Schottky noise for measuring beam lifetime with ultra-low intensity of ion beams are presented, and it is relevant to upcoming experiments on laser cooling of relativistic heavy ion beams and nuclear physics at the CSRe. (authors)

  2. Schottky junction photovoltaic devices based on CdS single nanobelts.

    Science.gov (United States)

    Ye, Y; Dai, L; Wu, P C; Liu, C; Sun, T; Ma, R M; Qin, G G

    2009-09-16

    Schottky junction photovoltaic (PV) devices were fabricated on single CdS nanobelts (NBs). Au was used as the Schottky contact, and In/Au was used as the ohmic contact to CdS NB. Typically, the Schottky junction exhibits a well-defined rectifying behavior in the dark with a rectification ratio greater than 10(3) at +/- 0.3 V; and the PV device exhibits a clear PV behavior with an open circuit photovoltage of about 0.16 V, a short circuit current of about 23.8 pA, a maximum output power of about 1.6 pW, and a fill factor of 42%. Moreover, the output power can be multiplied by connecting two or more of the Schottky junction PV devices, made on a single CdS NB, in parallel or in series. This study demonstrates that the 1D Schottky junction PV devices, which have the merits of low cost, easy fabrication and material universality, can be an important candidate for power sources in nano-optoelectronic systems.

  3. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

    Science.gov (United States)

    Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

    2015-11-13

    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

  4. Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

    International Nuclear Information System (INIS)

    San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

    2013-01-01

    The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

  5. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Directory of Open Access Journals (Sweden)

    Manjari Garg

    2016-01-01

    Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  6. Transverse Schottky spectra and beam transfer functions of coasting ion beams with space charge

    Energy Technology Data Exchange (ETDEWEB)

    Paret, Stefan

    2010-02-22

    A study of the transverse dynamics of coasting ion beams with moderate space charge is presented in this work. From the dispersion relation with linear space charge, an analytic model describing the impact of space charge on transverse beam transfer functions (BTFs) and the stability limits of a beam is derived. The dielectric function obtained in this way is employed to describe the transverse Schottky spectra with linear space charge as well. The difference between the action of space charge and impedances is highlighted. The setup and the results of an experiment performed in the heavy ion synchrotron SIS-18 at GSI to detect space-charge effects at different beam intensities are explicated. The measured transverse Schottky spectra and BTFs are compared with the linear space-charge model. The stability diagrams constructed from the BTFs are presented. The space-charge parameters evaluated from the Schottky and BTF measurements are compared with estimations based on measured beam parameters. The impact of collective effects on the Schottky and BTF diagnostics is also investigated through numerical simulations. For this purpose the self-field of beams with linear and non-linear transverse density-distributions is computed on a twodimensional grid. The noise of the random particle distribution causes fluctuations of the dipole moment of the beam which produce the Schottky spectrum. BTFs are simulated by exciting the beam with transverse kicks. The simulation results are used to verify the space-charge model. (orig.)

  7. A strained silicon cold electron bolometer using Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Brien, T. L. R., E-mail: tom.brien@astro.cf.ac.uk; Ade, P. A. R.; Barry, P. S.; Dunscombe, C.; Morozov, D. V.; Sudiwala, R. V. [School of Physics and Astronomy, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Leadley, D. R.; Myronov, M.; Parker, E. H. C.; Prest, M. J.; Whall, T. E. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Prunnila, M. [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT Espoo (Finland); Mauskopf, P. D. [School of Physics and Astronomy, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Department of Physics and School of Earth and Space Exploration, Arizona State University, 650 E. Tyler Mall, Tempe, Arizona 85287 (United States)

    2014-07-28

    We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n{sup ++} doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1×10{sup −16} W Hz{sup −1/2} when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz{sup −1/2}. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz{sup −1/2} and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise.

  8. Schottky contacts to polar and nonpolar n-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

    2012-01-15

    Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

  9. Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

    International Nuclear Information System (INIS)

    Saha, A.R.; Dimitriu, C.B.; Horsfall, A.B.; Chattopadhyay, S.; Wright, N.G.; O'Neill, A.G.; Maiti, C.K.

    2006-01-01

    Based on Quantum Mechanical (QM) carrier transport and the effects of interface states, a theoretical model has been developed to predict the anomalous current-voltage (I-V) characteristics of a non-ideal Ni-silicided Schottky diode at low temperatures. Physical parameters such as barrier height, ideality factor, series resistance and effective Richardson constant of a silicided Schottky diode were extracted from forward I-V characteristics and are subsequently used for the simulation of both forward and reverse I-V characteristics using a QM transport model in which the effects of interface state and bias dependent barrier reduction are incorporated. The present analysis indicates that the effects of barrier inhomogeneity caused by incomplete silicide formation at the junction and the interface states may change the conventional current transport process, leading to anomalous forward and reverse I-V characteristics for the Ni-silicided Schottky diode

  10. Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy

    Science.gov (United States)

    Chirakkara, Saraswathi; Choudhury, Palash Roy; Nanda, K. K.; Krupanidhi, S. B.

    2016-04-01

    Undoped and In doped ZnO (IZO) thin films are grown on Pt coated silicon substrates Pt/Si by pulsed laser deposition to fabricate Pt/ZnO:In Schottky diodes. The Schottky diodes were investigated by conventional two-probe current-voltage (I-V) measurements and by the I-V spectroscopy tool of conductive atomic force microscopy (C-AFM). The large deviation of the ideality factor from unity and the temperature dependent Schottky barrier heights (SBHs) obtained from the conventional method imply the presence of inhomogeneous interfaces. The inhomogeneity of SBHs is confirmed by C-AFM. Interestingly, the I-V curves at different points are found to be different, and the SBHs deduced from the point diodes reveal inhomogeneity at the nanoscale at the metal-semiconductor interface. A reduction in SBH and turn-on voltage along with enhancement in forward current are observed with increasing indium concentration.

  11. Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Di Mario, Lorenzo [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Turchini, Stefano, E-mail: stefano.turchini@cnr.it [ISM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Zamborlini, Giovanni; Feyer, Vitaly [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Tian, Lin [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Schneider, Claus M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg (Germany); Rubini, Silvia [IOM-CNR, TASC Laboratory, Basovizza 34149, Trieste (Italy); Martelli, Faustino, E-mail: faustino.martelli@cnr.it [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy)

    2016-11-15

    Highlights: • The Schottky barrier at the interface between Cu and GaAs nanowires was measured. • Individual nanowires were investigated by X-ray Photoemission Microscopy. • The Schottky barrier at different positions along the nanowire was evaluated. - Abstract: We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

  12. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  13. The controlled growth of graphene nanowalls on Si for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Quan Zhou

    2017-12-01

    Full Text Available Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

  14. High performance Schottky diodes based on indium-gallium-zinc-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

    2016-07-15

    Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

  15. First results from the LHC Schottky Monitor operated with Direct Diode Detection

    CERN Document Server

    Gasior, M

    2012-01-01

    The LHC is equipped with a Schottky diagnostic system based on 4.8 GHz resonant pick-ups. Their signals are processed according to a three-stage down-mixing scheme, working well in most beam conditions. An important exception is the period of energy ramp of proton beams, when the noise floor of the observed beam spectrum increases dramatically and the Schottky sidebands disappear. To study beam spectra in such conditions the signals from the Schottky pick-ups were split and the second half of their power was processed with a copy of the LHC tune measurement electronics, modified for this application. The experimental set-up is based on simple diode detectors followed by signal processing in the kHz range and 24-bit audio ADCs. With such a test system LHC beam spectra were successfully observed. This contribution presents the used hardware and obtained results.

  16. Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

    International Nuclear Information System (INIS)

    Pardo, D; Grajal, J

    2015-01-01

    This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology. (paper)

  17. The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Davids, P.S.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas75083 (United States)

    1998-04-01

    We present device model calculations of the current{endash}voltage (I{endash}V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I{endash}V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I{endash}V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited. {copyright} {ital 1998 American Institute of Physics.}

  18. The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

    Science.gov (United States)

    Campbell, I. H.; Davids, P. S.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1998-04-01

    We present device model calculations of the current-voltage (I-V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I-V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I-V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited.

  19. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

    International Nuclear Information System (INIS)

    Zhao Sheng-Lei; Mi Min-Han; Luo Jun; Wang Yi; Dai Yang; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Hou Bin

    2014-01-01

    In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    H. MAZARI

    2014-05-01

    Full Text Available The current-voltage (I-V characteristics of Pt/(n.u.d-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

  1. Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

    International Nuclear Information System (INIS)

    Horvath, Zs. J.

    1994-01-01

    The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

  2. Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode

    International Nuclear Information System (INIS)

    Qiao Dayong; Yuan Weizheng; Gao Peng; Yao Xianwang; Zang Bo; Zhang Lin; Guo Hui; Zhang Hongjian

    2008-01-01

    A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device. (authors)

  3. Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

    International Nuclear Information System (INIS)

    Da-Yong, Qiao; Wei-Zheng, Yuan; Peng, Gao; Xian-Wang, Yao; Bo, Zang; Lin, Zhang; Hui, Guo; Hong-Jian, Zhang

    2008-01-01

    A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device

  4. GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

    CERN Document Server

    Bourgoin, J C

    2002-01-01

    We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

  5. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced

  6. Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant; Rajput, Shivani; Li, Lian

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. In this study, graphene Schottky junctions are fabricated by transferring CVD monolayer graphene on mechanically exfoliated MoS2 multilayers. The forward bias current-voltage characteristics are measured in the temperature range of 210-300 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature. Such behavior is attributed to Schottky barrier inhomogeneities possibly due to graphene ripples and ridges at the junction interface as suggested by atomic force microscopy. Assuming a Gaussian distribution of the barrier height, mean barrier of 0.97+/-0.10 eV is found for the graphene MoS2 junction. Our findings provide significant insight on the barrier height inhomogeneities in graphene/two dimensional semiconductor Schottky junctions. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award No. DEFG02-07ER46228.

  7. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

    Science.gov (United States)

    Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

    2015-05-29

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

  8. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Hudy, L J; Li, L; Li, C H

    2015-01-01

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current–voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions. (paper)

  9. Study of Schottky diodes made on Mn doped p-type InP

    Czech Academy of Sciences Publication Activity Database

    Žďánský, Karel; Kozak, Halina; Sopko, B.; Pekárek, Ladislav

    2008-01-01

    Roč. 19, č. 1 (2008), S333-S337 ISSN 0957-4522 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100520 Keywords : Schottky effect * semiconductors * deep levels Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.054, year: 2008

  10. A graphene/single GaAs nanowire Schottky junction photovoltaic device.

    Science.gov (United States)

    Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

    2018-05-04

    A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

  11. Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

    Science.gov (United States)

    Lee, Jung Ah; Rok Lim, Young; Jung, Chan Su; Choi, Jun Hee; Im, Hyung Soon; Park, Kidong; Park, Jeunghee; Kim, Gyu Tae

    2016-10-01

    To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.

  12. Development of high performance Schottky barrier diode and its application to plasma diagnostics

    International Nuclear Information System (INIS)

    Fujita, Junji; Kawahata, Kazuo; Okajima, Shigeki

    1993-10-01

    At the conclusion of the Supporting Collaboration Research on 'Development of High Performance Detectors in the Far Infrared Range' carried out from FY1990 to FY1992, the results of developing Schottky barrier diode and its application to plasma diagnostics are summarized. Some remarks as well as technical know-how for the correct use of diodes are also described. (author)

  13. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

  14. Simulation of electrical characteristics of GaN vertical Schottky diodes

    Science.gov (United States)

    Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej

    2016-12-01

    Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

  15. Plasmonic silicon Schottky photodetectors: the physics behind graphene enhanced internal photoemission

    DEFF Research Database (Denmark)

    Levy, Uriel; Grajower, Meir; Gonçalves, P. A. D.

    2017-01-01

    a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor...

  16. ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

    Indian Academy of Sciences (India)

    Abstract. Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at ..... This work was partially supported by The Management Unit of Scientific Research Project of Bozok University and Hitit. University.

  17. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Yatskiv, Roman

    2013-01-01

    Roč. 28, č. 4 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

  18. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Energy Technology Data Exchange (ETDEWEB)

    Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Araújo, D. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Fiori, A. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Traoré, A. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Villar, M.P. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Eon, D.; Muret, P.; Pernot, J. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Teraji, T. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan)

    2017-02-15

    Highlights: • Metal/O-terminated diamond interfaces are analyzed by a variety of TEM techniques. • Thermal treatment is shown to modify structural and chemical interface properties. • Electrical behavior vs annealing is shown to be related with interface modification. • Interfaces are characterized with atomic resolution to probe inhomogeneities. • Oxide formation and modification is demonstrated in both Schottky diodes. - Abstract: Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (n{sub WC} = 1.02 and n{sub Zr} = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCR{sub WC} = 3.03 and OCR{sub Zr} = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.

  19. Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

    International Nuclear Information System (INIS)

    Chand, Subhash; Bala, Saroj

    2007-01-01

    The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

  20. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

  1. Summer Student Report 2014: Schottky component qualification and RF filter characterization

    CERN Document Server

    Egidos Plaja, Nuria

    2014-01-01

    This Summer Student project has been developed in BE-BI-QP department under the supervision of Manfred Wendt. Main goals of the task to be performed are the following: 1)\tFilter characterization: the student will get familiar with the Vector Network Analizer (VNA), S-parameter measurement and PSPICE modelling of low-pass filters. 2)\tFilter response matching: an algorithm to compare and classify filter responses into best-matching pairs will be developed. 3)\tSchottky monitor filter qualification: S-parameter and time domain measurements will be carried out with filters related to Schottky monitor and results will be benchmarked. 4)\tSchottky monitor amplifier measurement: noise figure and gain at a given frequency will be measured for a set of Low Noise Amplifiers related to Schottky monitor. -1dB compression point and 3rd order interception point will be measured too for education purposes. For the development of this project, the student will get familiar with RF measure devices (VNA, VSA), theoretical concep...

  2. Comparison of magnetic and electrostatic Schottky pick-up in the CERN AD

    CERN Document Server

    Federmann, S

    2013-01-01

    The present note is intended to exploit the possibility of using a dedicated electrostatic beam pick-up for Schottky diagnostics in the future ELENA ring. A test setup is described allowing the evaluation of its performance compared to the extra low-noise beam current transformer used successfully in the AD. The results of this experiment are summarized and discussed.

  3. 63Ni schottky barrier nuclear battery of 4H-SiC

    International Nuclear Information System (INIS)

    Xiao-Ying Li; Yong Ren; Xue-Jiao Chen; Da-Yong Qiao; Wei-Zheng Yuan

    2011-01-01

    The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm 2 to collect the charge from a 4 mCi/cm 2 63 Ni source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed. A prototype of this battery was fabricated and tested under the illumination of the 63 Ni source with an activity of 0.12 mCi. An open circuit voltage (V OC ) of 0.27 V and a short circuit current density (J SC ) of 25.57 nA/cm 2 are measured. The maximum output power density (P max ) of 4.08 nW/cm 2 and power conversion efficiency (η) of 1.01% is obtained. The performance of this battery is expected to be significantly improved by using larger activity and optimizing the design and processing technology of the battery. By achieving comparable performance with previously constructed p-n or p-i-n junction energy conversion structures, the Schottky barrier diode proves to be a feasible approach to achieve practical betavoltaics. (author)

  4. Utilizing Schottky barriers to suppress short-channel effects in organic transistors

    Science.gov (United States)

    Fernández, Anton F.; Zojer, Karin

    2017-10-01

    Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest height necessary to exactly compensate for the premature turn on. This approach offers a substantial enhancement of the ON-OFF ratio. We show that this roots in the fact that such optimal barrier heights offer an excellent compromise between an OFF current diminished by orders of magnitude and an only slightly reduced ON current.

  5. Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application

    International Nuclear Information System (INIS)

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications.

  6. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  7. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  8. Schottky diode model for non-parabolic dispersion in narrow-gap semiconductor and few-layer graphene

    Science.gov (United States)

    Ang, Yee Sin; Ang, L. K.; Zubair, M.

    Despite the fact that the energy dispersions are highly non-parabolic in many Schottky interfaces made up of 2D material, experimental results are often interpreted using the conventional Schottky diode equation which, contradictorily, assumes a parabolic energy dispersion. In this work, the Schottky diode equation is derived for narrow-gap semiconductor and few-layer graphene where the energy dispersions are highly non-parabolic. Based on Kane's non-parabolic band model, we obtained a more general Kane-Schottky scaling relation of J (T2 + γkBT3) which connects the contrasting J T2 in the conventional Schottky interface and the J T3 scaling in graphene-based Schottky interface via a non-parabolicity parameter, γ. For N-layer graphene of ABC -stacking and of ABA -stacking, the scaling relation follows J T 2 / N + 1 and J T3 respectively. Intriguingly, the Richardson constant extracted from the experimental data using an incorrect scaling can differ with the actual value by more than two orders of magnitude. Our results highlights the importance of using the correct scaling relation in order to accurately extract important physical properties, such as the Richardson constant and the Schottky barrier's height.

  9. Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

    Science.gov (United States)

    Villa, E; Aja, B; de la Fuente, L; Artal, E

    2016-01-01

    This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

  10. Canonical Schottky barrier heights of transition metal dichalcogenide monolayers in contact with a metal

    Science.gov (United States)

    Szcześniak, Dominik; Hoehn, Ross D.; Kais, Sabre

    2018-05-01

    The transition metal dichalcogenide (M X2 , where M =Mo , W and X =S , Se, Te) monolayers are of high interest for semiconducting applications at the nanoscale level; this interest is due to both their direct band gaps and high charge mobilities. In this regard, an in-depth understating of the related Schottky barrier heights, associated with the incorporation of M X2 sheets into novel low-dimensional metal-semiconductor junctions, is of crucial importance. Herein, we generate and provide analysis of the Schottky barrier heights behavior to account for the metal-induced gap states concept as its explanation. In particular, the present investigations concentrate on the estimation of the charge neutrality levels directly by employing the primary theoretical model, i.e., the cell-averaged Green's function formalism combined with the complex band structure technique. The results presented herein place charge neutrality levels in the vicinity of the midgap; this is in agreement with previous reports and analogous to the behavior of three-dimensional semiconductors. The calculated canonical Schottky barrier heights are also found to be in agreement with other computational and experimental values in cases where the difference between electronegativities of the semiconductor and metal contact is small. Moreover, the influence of the spin-orbit effects is herein considered and supports that Schottky barrier heights have metal-induced gap state-derived character, regardless whether spin-orbit coupling interactions are considered. The results presented within this report constitute a direct and vital verification of the importance of metal-induced gap states in explaining the behavior of observed Schottky barrier heights at M X2 -metal junctions.

  11. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Jian-Jhou; Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw

    2014-05-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances.

  12. Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

    Science.gov (United States)

    Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

    2018-01-01

    We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

  13. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Zeng, Jian-Jhou; Lin, Yow-Jon

    2014-01-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances

  14. Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study

    International Nuclear Information System (INIS)

    Nakayama, T.; Kobinata, K.

    2012-01-01

    Schottky-barrier changes by the segregation and structural disorder are studied using the first-principles calculations and adopting Au/Si interface. The Schottky barrier for electrons simply decreases as increasing the valency of segregated atoms from II to VI families, which variation is shown closely related to how the Si atoms are terminated at the interface. On the other hand, the structural disorders (defects) prefer to locate near the interface and the Schottky barrier for hole carriers does not change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials reflecting the appearance of Si dangling bonds.

  15. Influence of the Interaction Between Graphite and Polar Surfaces of ZnO on the Formation of Schottky Contact

    Science.gov (United States)

    Yatskiv, R.; Grym, J.

    2018-03-01

    We show that the interaction between graphite and polar surfaces of ZnO affects electrical properties of graphite/ZnO Schottky junctions. A strong interaction of the Zn-face with the graphite contact causes interface imperfections and results in the formation of laterally inhomogeneous Schottky contacts. On the contrary, high quality Schottky junctions form on the O-face, where the interaction is significantly weaker. Charge transport through the O-face ZnO/graphite junctions is well described by the thermionic emission model in both forward and reverse directions. We further demonstrate that the parameters of the graphite/ZnO Schottky diodes can be significantly improved when a thin layer of ZnO2 forms at the interface between graphite and ZnO after hydrogen peroxide surface treatment.

  16. Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kawazu, Takuya; Noda, Takeshi; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

    2015-01-12

    We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.

  17. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

    Science.gov (United States)

    Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

    2016-01-01

    The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

  18. Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

    International Nuclear Information System (INIS)

    Yüksel, Ö.F.; Tuğluoğlu, N.; Gülveren, B.; Şafak, H.; Kuş, M.

    2013-01-01

    Graphical abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. An emphasis is placed on how electrical and interface characteristics like current–voltage (I–V) variation, ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of Au/PMI/p-Si diode structure change with the temperatures between 100 and 300 K. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. -- Highlights: •An Au/perylene-monoimide (PMI)/p-Si Schottky diode having an organic interlayer has been fabricated. •I–V characteristics have been investigated over a wide temperature range 100–300 K. •C–V measurements have been analyzed at room temperature. -- Abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current–voltage characteristics (I–V), ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of diode change with temperature over a wide range of 100–300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation–recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung–Cheung method is also employed to analysis the current–voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier

  19. Fabrication, characterization and simulation of 4H-SiC Schottky diode alpha particle detectors for pyroprocessing actinide monitoring

    Science.gov (United States)

    Garcia, Timothy Richard

    Pyroprocessing is a method of using high-temperature molten salts and electric fields to separate and collect fuel isotopes of used nuclear fuel. It has been has been tested in the U.S. at Idaho National Laboratory as a key step in closing the nuclear fuel cycle. One technical problem with the pyroprocessing method is a lack of knowledge regarding the actinide concentrations in the salt bath during operation, since on-line techniques for measuring these concentrations are not presently available. 4H-SiC Schottky diode detectors can potentially fulfill this need. Such detectors would operate in contact with the molten salt, and measure concentrations via alpha-particle spectroscopy. This work seeks to fabricate and characterize 4H-SiC Schottky diode detectors at high temperature, model the alpha particle spectrum expected in a molten salt, and model the operation of the detectors to confirm the physics of operation is as expected. In this work, 4H-SiC Schottky diode detectors were fabricated at OSU Nanotech West. After fabrication, these detectors were characterized using both I-V curves and Am-241 alpha-particle energy spectra. All measurements were made as a function of temperature, from room temperature up to 500°C. The average energy required to create an electron-hole pair was observed to decrease with an increase of temperature, due to a decrease of both the 4H-SiC bandgap and non-linear energy loss terms. Furthermore, the FWHM of the spectra was observed to be dependent on the leakage current at a certain temperature, and not dependent on the temperature itself. Secondly, the alpha particle energy spectrum in the pyroprocessing environment was modeled using SRIM. The molten salt was modeled in 3 different geometries, with or without a protective cover material on top of the detector. Due to the loss of alpha-particle energy in the molten salt itself, a high-energy alpha emitter may completely cover the spectrum from a lower-energy alpha emitter. Each of the

  20. Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

    Energy Technology Data Exchange (ETDEWEB)

    Kasper, M. [Christian Doppler Laboratory for Nanoscale Methods in Biophysics, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Gramse, G. [Biophysics Institute, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Hoffmann, J. [METAS, National Metrology Institute of Switzerland, Lindenweg 50, 3003 Bern-Wabern (Switzerland); Gaquiere, C. [MC2 technologies, 5 rue du Colibri, 59650 Villeneuve D' ascq (France); Feger, R.; Stelzer, A. [Institute for Communications Engineering and RF-Systems, Johannes Kepler University, Altenberger Str. 69, 4040 Linz (Austria); Smoliner, J. [Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna (Austria); Kienberger, F., E-mail: ferry-kienberger@keysight.com [Keysight Technologies Austria, Measurement Research Lab, Gruberstrasse 40, 4020 Linz (Austria)

    2014-11-14

    We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

  1. Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

    2017-12-01

    In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

  2. Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

    2014-01-01

    Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    International Nuclear Information System (INIS)

    Čermák, Jan; Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

    2014-01-01

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent

  4. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    Science.gov (United States)

    Čermák, Jan; Koide, Yasuo; Takeuchi, Daisuke; Rezek, Bohuslav

    2014-02-01

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  5. A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.

    Science.gov (United States)

    Hwang, Hyeon Jun; Chang, Kyoung Eun; Yoo, Won Beom; Shim, Chang Hoo; Lee, Sang Kyung; Yang, Jin Ho; Kim, So-Young; Lee, Yongsu; Cho, Chunhum; Lee, Byoung Hun

    2017-02-16

    We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.73 eV, and an on-off ratio of up to 10 7 was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.

  6. Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

    Science.gov (United States)

    Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

    2014-09-10

    A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

  7. Enhanced Schottky signals from electron-cooled, coasting beams in a heavy-ion storage ring

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, C., E-mail: claude.krantz@mpi-hd.mpg.d [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Blaum, K.; Grieser, M. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Litvinov, Yu.A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Planckstrasse 1, D-64291 Darmstadt (Germany); Repnow, R.; Wolf, A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany)

    2011-02-11

    Measurements at the Test Storage Ring of the Max-Planck-Institut fuer Kernphysik in Heidelberg (Germany) have shown that the signal amplitude induced in a Schottky-noise pickup electrode by a coasting electron-cooled ion beam can be greatly enhanced by exposure of the latter to a perturbing radiofrequency signal which is detuned from the true beam revolution frequency. The centre frequencies obtained from harmonic analysis of the observed pickup signal closely follow those imposed on the ions by the electron cooling force. The phenomenon can be exploited to measure the true revolution frequency of ion beams of very low intensity, whose pure Schottky noise is too weak to be measurable under normal circumstances.

  8. Operation and scalability of dopant-segregated Schottky barrier MOSFETs with recessed channels

    International Nuclear Information System (INIS)

    Shih, Chun-Hsing; Hsia, Jui-Kai

    2013-01-01

    Recessed channels were used in scaled dopant-segregated Schottky barrier MOSFETs (DS-SBMOS) to control the severe short-channel effect. The physical operation and device scalability of the DS-SBMOS resulting from the presence of recessed channels and associated gate-corners are elucidated. The coupling of Schottky and gate-corner barriers has a key function in determining the on–off switching and drain current. The gate-corner barriers divide the channel into three regions for protection from the drain penetration field. To prevent resistive degradations in the drive current, an alternative asymmetric recessed channel (ARC) without a source-side gate-corner is proposed to simultaneously optimize both the short-channel effect and drive current in the scaled DS-SBMOS. By employing the proposed ARC architecture, the DS-SBMOS devices can be successfully scaled down, making them promising candidates for next-generation CMOS devices. (paper)

  9. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Qian; Yan, Linlong; Luo, Yi [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  10. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    International Nuclear Information System (INIS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-01-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate

  11. Schottky effect model of electrical activity of metallic precipitates in silicon

    International Nuclear Information System (INIS)

    Plekhanov, P. S.; Tan, T. Y.

    2000-01-01

    A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate-Si system. Carrier diffusion and carrier drift in the Si space charge region are accounted for. Carrier recombination is attributed to the thermionic emission mechanism of charge transport across the Schottky junction rather than the surface recombination. It is shown that the precipitates can have a very large minority carrier capture cross-section. Under weak carrier generation conditions, the supply of minority carriers is found to be the limiting factor of the recombination process. The plausibility of the model is demonstrated by a comparison of calculated and available experimental results. (c) 2000 American Institute of Physics

  12. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    Directory of Open Access Journals (Sweden)

    Young Ki Hong

    2016-05-01

    Full Text Available Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2 thin-film transistor (TFT, which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  13. High performance and transparent multilayer MoS{sub 2} transistors: Tuning Schottky barrier characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Young Ki; Kwon, Junyeon; Hong, Seongin; Song, Won Geun; Liu, Na; Omkaram, Inturu; Kim, Sunkook, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Multi-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701 (Korea, Republic of); Yoo, Geonwook; Yoo, Byungwook; Oh, Min Suk, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Display Convergence Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816 (Korea, Republic of); Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

    2016-05-15

    Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS{sub 2}) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS{sub 2} TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS{sub 2} and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  14. Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study

    International Nuclear Information System (INIS)

    Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui; Xu, Ke; Wang, Jianfeng; Ren, Guoqiang

    2014-01-01

    Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure

  15. A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

    International Nuclear Information System (INIS)

    Wang Ying; Jiao Wen-Li; Hu Hai-Fan; Liu Yun-Tao; Cao Fei

    2012-01-01

    An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm 2 and 6.5 mΩ·mm 2 for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET. (condensed matter: structural, mechanical, and thermal properties)

  16. Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

    2011-10-01

    Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

  17. New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

    Directory of Open Access Journals (Sweden)

    V. G. Ivanov

    2011-01-01

    Full Text Available The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

  18. Fabrication of polymer Schottky diode with Al-PANI/MWCNT-Au structure

    Directory of Open Access Journals (Sweden)

    A Hajibadali

    2014-11-01

    Full Text Available In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows Ohm’s Law and at higher voltages, the mechanism is consistent with space charge limited conduction (SCLC emission. The parameters extracted from I-V characteristics were also calculated.

  19. Film thickness degradation of Au/GaN Schottky contact characteristics

    International Nuclear Information System (INIS)

    Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

    2005-01-01

    Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

  20. The effects of temperature on Schottky diode barrier height and evidence of multiple barrier

    International Nuclear Information System (INIS)

    Rabah, K.V.O.

    1994-07-01

    Experimental study of Capacitance-Voltage-Temperature (C-V-T) plots, Current-Voltage-Temperature (I-V-T) characteristics have been undertaken in order to determine the height of the Schottky barrier. The results of the barrier height obtained by the above two methods were found to differ as well as vary with temperature change. In view of this discrepancy in barrier height values, two further experiments were performed: one on activation energy (I-T) plots and the other on pulsed (I-V-T) characteristics, and the results were found to show a similar trend. The Schottky diode studied was a 30CP040. (author). 23 refs, 9 figs, 3 tabs

  1. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Čermák, Jan, E-mail: cermakj@fzu.cz; Rezek, Bohuslav [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague 6 (Czech Republic); Koide, Yasuo [Sensor Materials Center, National Institute for Material Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Takeuchi, Daisuke [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

    2014-02-07

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  2. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

    International Nuclear Information System (INIS)

    Chen Fengping; Zhang Yuming; Lue Hongliang; Zhang Yimen; Guo Hui; Guo Xin

    2011-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. (semiconductor devices)

  3. Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance

    OpenAIRE

    Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, Yusuf

    2016-01-01

    Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron ...

  4. Characterization and Reliability of Vertical N-Type Gallium Nitride Schottky Contacts

    Science.gov (United States)

    2016-09-01

    ACKNOWLEDGMENTS Foremost, I would like to thank my wife, Melissa, with whom I have three wonderful children. Without her endless love , unwavering...conducting research in the lab and studying in the library, she cared for our children and created a loving home for our family. Her strength, passion...Online]. Available: http://ecee.colorado.edu/~bart/book/book/title.htm 78 [12] R. T. Tung, “The physics and chemistry of the Schottky barrier

  5. Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Nyamhere, Cloud [Department of Physics, Nelson Mandela Metropolitan University, Box 7700, Port Elizabeth 6031 (South Africa); Auret, Francois D.; Nel, Jacqueline M.; Mtangi, Wilbert; Diale, Mmatsae [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa)

    2012-05-15

    Ruthenium (Ru) Schottky contacts were fabricated on n-Ge (1 0 0) by electron beam deposition. Current-voltage (I-V), deep level transient spectroscopy (DLTS), and Laplace-DLTS techniques were used to characterise the as-deposited and annealed Ru/n-Ge (1 0 0) Schottky contacts. The variation of the electrical properties of the Ru samples annealed between 25 Degree-Sign C and 575 Degree-Sign C indicates the formation of two phases of ruthenium germanide. After Ru Schottky contacts fabrication, an electron trap at 0.38 eV below the conduction band with capture cross section of 1.0 Multiplication-Sign 10{sup -14} cm{sup -2} is the only detectable electron trap. The hole traps at 0.09, 0.15, 0.27 and 0.30 eV above the valence band with capture cross sections of 7.8 Multiplication-Sign 10{sup -13} cm{sup -2}, 7.1 Multiplication-Sign 10{sup -13} cm{sup -2}, 2.4 Multiplication-Sign 10{sup -13} cm{sup -2} and 6.2 Multiplication-Sign 10{sup -13} cm{sup -2}, respectively, were observed in the as-deposited Ru Schottky contacts. The hole trap H(0.30) is the prominent single acceptor level of the E-centre, and H(0.09) is the third charge state of the E-centre. H(0.27) shows some reverse annealing and reaches a maximum concentration at 225 Degree-Sign C and anneals out after 350 Degree-Sign C. This trap is strongly believed to be V-Sb{sub 2} complex formed from the annealing of V-Sb defect centre.

  6. Electrical degradation of double-Schottky barrier in ZnO varistors

    Energy Technology Data Exchange (ETDEWEB)

    He, Jinliang, E-mail: hejl@tsinghua.edu.cn; Cheng, Chenlu; Hu, Jun [The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

    2016-03-15

    Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

  7. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  8. Schottky-Gated Probe-Free ZnO Nanowire Biosensor

    KAUST Repository

    Yeh, Ping-Hung

    2009-12-28

    (Figure Presented) A nanowire-based nanosensor for detecting biologically and chemically charged molecules that is probe-free and highly sensitive is demonstrated. The device relies on the nonsymmetrical Schottky contact under reverse bias (see figure) and is much more sensitive than the device based on the symmetric ohmic contact. This approach serves as a guideline for designing more practical chemical and biochemical sensors. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

  9. Tunable Schottky diodes fabricated from crossed electrospun SnO{sub 2}/PEDOT-PSSA nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Carrasquillo, Katherine V. [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico)

    2012-06-25

    Graphical abstract: Crossed SnO{sub 2}/PEDOT-PSSA nanoribbon Schottky diodes. Highlight: Black-Right-Pointing-Pointer An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. Black-Right-Pointing-Pointer Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. Black-Right-Pointing-Pointer This makes it useful as a gas and light sensor. Black-Right-Pointing-Pointer In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. Black-Right-Pointing-Pointer A half wave rectifier has been demonstrated with this device under UV illumination. - Abstract: Schottky diodes have been fabricated on doped Si/SiO{sub 2} substrates in air, by simply crossing individual electrospun tin oxide (SnO{sub 2}) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was {approx}6 S/cm with no observable field effect, while SnO{sub 2} exhibited n-doped field effect behavior with a charge mobility of {approx}3.1 cm{sup 2}/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.

  10. Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers

    International Nuclear Information System (INIS)

    Fetterman, H.R.; Tannenwald, P.E.; Clifton, B.J.; Parker, C.D.; Fitzgerald, W.D.; Erickson, N.R.

    1978-01-01

    We have made heterodyne radiometric measurements with GaAs Schottky diode mixers, mounted in a corner-reflector configuration, over the spectral range 170 μm to 1 mm. At 400 μm, system noise temperatures of 9700 K DSB (NEP=1.4 x 10 - 19 W/Hz) and mixer noise temperatures of 5900 K have been achieved. This same quasioptical mixer has also been used to generate 10 - 7 W of tunable radiation suitable for spectroscopic applications

  11. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hadzi-Vukovic, J [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Jevtic, M [Institute for Physics, Pregrevica 118, 11080 Zemun (Serbia and Montenegro); Rothleitner, H [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Croce, P Del [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria)

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits.

  12. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    International Nuclear Information System (INIS)

    Hadzi-Vukovic, J; Jevtic, M; Rothleitner, H; Croce, P Del

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits

  13. Fabrication and characterization of Au/n-CdTe Schottky barrier under illumination and dark

    Science.gov (United States)

    Bera, Swades Ranjan; Saha, Satyajit

    2018-04-01

    CdTe nanoparticles have been grown by chemical reduction method using EDA as capping agent. These are used to fabricate Schottky barrier in a simple cost-effective way at room temperature. The grown nanoparticles are structurally characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM). The optical properties of nano CdTe is characterized by UV-Vis absorption spectra, PL spectra. The band gap of the CdTe nanoparticles is increased as compared to CdTe bulk form indicating there is blue shift. The increase of band gap is due to quantum confinement. Photoluminescence spectra shows peak which corresponds to emission from surface state. CdTe nanofilm is grown on ITO coated glass substrate by dipping it on toluene containing dispersed CdTe nanoparticles. Schottky barrier of Au/n-CdTe is fabricated on ITO coated glass by vacuum deposition of gold. I- V and C- V characteristics of Au/n-CdTe Schottky barrier junction have been studied under dark and light condition. It is found that these characteristics are influenced by surface or interface traps. The values of barrier height, ideality factor, donor concentration and series resistance are obtained from the reverse bias capacitance-voltage measurements.

  14. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

    Science.gov (United States)

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-04-27

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

  15. Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

    Science.gov (United States)

    Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

    2017-03-01

    We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

  16. Reducing the Schottky barrier between few-layer MoTe2 and gold

    Science.gov (United States)

    Qi, Dianyu; Wang, Qixing; Han, Cheng; Jiang, Jizhou; Zheng, Yujie; Chen, Wei; Zhang, Wenjing; Thye Shen Wee, Andrew

    2017-12-01

    Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200-400 °C). The resulting Schottky barrier height of the annealed MoTe2/Au interface is low (~23 meV). A new Raman A g mode of the 1T‧ metallic phase of MoTe2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe2. The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the transformation rate. With this method, the mobility and ON-state current of the MoTe2 transistor increase by ~3-4 orders of magnitude, the photocurrent of vertically stacked graphene/MoTe2/Au device increases ~300%, and the response time decreases by ~20%.

  17. Irradiation effects on electrical properties of DNA solution/Al Schottky diodes

    Science.gov (United States)

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Iwamoto, Mitsumasa

    2018-04-01

    Deoxyribonucleic acid (DNA) has emerged as one of the most exciting organic material and as such extensively studied as a smart electronic material since the last few decades. DNA molecules have been reported to be utilized in the fabrication of small-scaled sensors and devices. In this current work, the effect of alpha radiation on the electrical properties of an Al/DNA/Al device using DNA solution was studied. It was observed that the carrier transport was governed by electrical interface properties at the Al-DNA interface. Current ( I)-voltage ( V) curves were analyzed by employing the interface limited Schottky current equations, i.e., conventional and Cheung and Cheung's models. Schottky parameters such as ideality factor, barrier height and series resistance were also determined. The extracted barrier height of the Schottky contact before and after radiation was calculated as 0.7845, 0.7877, 0.7948 and 0.7874 eV for the non-radiated, 12, 24 and 36 mGy, respectively. Series resistance of the structure was found to decline with the increase in the irradiation, which was due to the increase in the free radical root effects in charge carriers in the DNA solution. Results pertaining to the electronic profiles obtained in this work may provide a better understanding for the development of precise and rapid radiation sensors using DNA solution.

  18. Impact of substrate off-angle on the m-plane GaN Schottky diodes

    Science.gov (United States)

    Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

    2018-04-01

    We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward [000\\bar{1}]. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm-3) and carbon (>1016 cm-3) impurities. The residual carbon and oxygen impurities decreased to current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

  19. Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide

    Science.gov (United States)

    Gora, V. E.; Chawanda, A.; Nyamhere, C.; Auret, F. D.; Mazunga, F.; Jaure, T.; Chibaya, B.; Omotoso, E.; Danga, H. T.; Tunhuma, S. M.

    2018-04-01

    We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300-800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications.

  20. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    Science.gov (United States)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  1. 670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

    Science.gov (United States)

    Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta; hide

    2012-01-01

    GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.

  2. Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing

    Science.gov (United States)

    So, Hongyun; Hou, Minmin; Jain, Sambhav R.; Lim, Jongwoo; Senesky, Debbie G.

    2016-04-01

    A microscale soot-particulate sensor using interdigitated platinum-gallium nitride (Pt-GaN) Schottky interfaces was developed to monitor fine soot particles within high-temperature environments (e.g., combustion exhausts and flues). Upon exposure to soot particles (30 to 50 nm in diameter) from an experimental chimney, an increased current (∼43.6%) is observed through the back-to-back Schottky contact to n-type GaN. This is attributed to a reduction in the effective Schottky barrier height (SBH) of ∼10 meV due to the electric field from the charged soot particles in the depletion region and exposed GaN surface. Furthermore, the microfabricated sensor was shown to recover sensitivity and regenerate the sensing response (∼11 meV SBH reduction) after exposure to temperature as high as 550 °C. This study supports the feasibility of a simple and reliable soot sensor to meet the increasing market demand for particulate matter sensing in harsh environments.

  3. Effect of hydrogen on ZnO films and Au/ZnO Schottky contacts

    International Nuclear Information System (INIS)

    Tsiarapas, C; Girginoudi, D; Georgoulas, N

    2014-01-01

    The structural, optical and electrical properties of ZnO films for different amounts of incorporated hydrogen (H), as well as the electrical characteristics of Au Schottky contacts based on these ZnO layers have been investigated. The films were deposited with the dc-magnetron sputtering technique, varying the H flow rate in the Ar/H sputtering gas. We found a significant improvement of the crystallinity (as obtained from x-ray diffraction spectra), Hall mobility and resistivity as the H concentration per vol. [H 2 ] (during deposition) increases from 0% to 33.3%, which is followed by degradation for further [H 2 ] increase. A high dependence of the carrier mobility on the grain size is also noted. The Schottky diodes were characterized through current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. In correlation with the basic film properties, we obtained the best results for the Schottky diodes with [H 2 ] = 33.3%, in terms of higher rectification ratio, lower ideality factor (η) and series resistance (R s ). Both the electron concentration n and the ionized donors' concentration N D (obtained from C–V curves) increase constantly with [H 2 ] increase, and that seems to be consistent with our suggestion that H acts as a donor in ZnO. (paper)

  4. Very low Schottky barrier height at carbon nanotube and silicon carbide interface

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2015-03-23

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

  5. Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device

    Science.gov (United States)

    Amorim, Cleber A.; Bernardo, Eric P.; Leite, Edson R.; Chiquito, Adenilson J.

    2018-05-01

    The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO2/Au–Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier height Φ B was estimated from I–V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I–V characteristics exhibited a Gaussian distribution having mean barrier heights {\\overline{{{Φ }}}}B of 0.30 eV and standard deviation σ s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm‑2 K‑2, leading to an effective mass of 0.58m 0. Consequently, the temperature dependence of I–V characteristics of the SnO2 nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.

  6. Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

    International Nuclear Information System (INIS)

    Guo-Ping, Ru; Rong, Yu; Yu-Long, Jiang; Gang, Ruan

    2010-01-01

    This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I-V-T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage V j , excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, V j needs to be smaller than the barrier height ø. With proper scheme of series resistance connection where the condition of V j > ø is guaranteed, I-V-T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I-V-T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I-V-T curves only for small barrier height inhomogeneity. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. External electric field effects on Schottky barrier at Gd3N@C80/Au interface

    Science.gov (United States)

    Onishi, Koichi; Nakashima, Fumihiro; Jin, Ge; Eto, Daichi; Hattori, Hayami; Miyoshi, Noriko; Kirimoto, Kenta; Sun, Yong

    2017-08-01

    The effects of the external electric field on the height of the Schottky barrier at the Gd3N@C80/Au interface were studied by measuring current-voltage characteristics at various temperatures from 200 K to 450 K. The Gd3N@C80 sample with the conduction/forbidden/valence energy band structure had a face-centered cubic crystal structure with the average grain size of several nanometers. The height of the Gd3N@C80/Au Schottky barrier was confirmed to be 400 meV at a low electric field at room temperature. Moreover, the height decreases with the increasing external electric field through a change of permittivity in the Gd3N@C80 sample due to a polarization of the [Gd3] 9 +-[N3 -+("separators="|C80 ) 6 -] dipoles in the Gd3N@C80 molecule. The field-dependence of the barrier height can be described using a power math function of the electric field strength. The results of the field-dependent barrier height indicate that the reduction in the Schottky barrier is due to an image force effect of the transport charge carrier at the Gd3N@C80/Au interface.

  8. Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells.

    Science.gov (United States)

    Yi, Sum-Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-Hwa

    2016-12-14

    We developed Schottky junction photovoltaic cells based on multilayer Mo 1-x W x Se 2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo 0.5 W 0.5 Se 2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe 2 and WSe 2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo 0.5 W 0.5 Se 2 devices. Furthermore, we showed that Mo 0.5 W 0.5 Se 2 -based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

  9. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

    1996-11-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. {copyright} {ital 1996 The American Physical Society.}

  10. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    International Nuclear Information System (INIS)

    Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L.; Barashkov, N.N.; Ferraris, J.P.

    1996-01-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM close-quote s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM close-quote s on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. copyright 1996 The American Physical Society

  11. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    Science.gov (United States)

    Campbell, I. H.; Rubin, S.; Zawodzinski, T. A.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1996-11-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy, 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM's) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM's on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices.

  12. Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

    International Nuclear Information System (INIS)

    Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

    2014-01-01

    Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

  13. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  14. Electrical characterization of CdTe pixel detectors with Al Schottky anode

    International Nuclear Information System (INIS)

    Turturici, A.A.; Abbene, L.; Gerardi, G.; Principato, F.

    2014-01-01

    Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage (I–V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current–voltage characteristics

  15. Characterization of a SiC MIS Schottky diode as RBS particle detector

    Science.gov (United States)

    Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

    2018-02-01

    A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

  16. Electrical characteristics of {sup 60}Co {gamma}-ray irradiated MIS Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)

    2006-11-15

    In order to interpret the effect of {sup 60}Co {gamma}-ray irradiation dose on the electrical characteristics of MIS Schottky diodes, they were stressed with a zero bias at 1 MHz in dark and room temperature during {gamma}-ray irradiation and the total dose range was 0-450 kGy. The effect of {gamma}-ray exposure on the electrical characteristics of MIS Schottky diodes has been investigated using C-V and G/{omega}-V measurements at room temperature. Experimental results show that {gamma}-ray irradiation induces a decrease in the barrier height {phi} {sub B} and series resistance R {sub s}, decreasing with increasing dose rate. Also, the acceptor concentration N {sub A} increases with increasing radiation dose. The C-V characteristics prove that there is a reaction for extra recombination centers in case of MIS Schottky diodes exposed to {gamma}-ray radiation. Furthermore, the density of interface states N {sub ss} by Hill-Coleman method increases with increasing radiation dose. Experimental results indicate that the interface-trap formation at high irradiation dose is reduced due to positive charge build-up in the Si/SiO{sub 2} interface (due to the trapping of holes) that reduces the flow rate of subsequent holes and protons from the bulk of the insulator to the Si/SiO{sub 2} interface.

  17. Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

    Science.gov (United States)

    Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

    2018-05-01

    The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

  18. The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation

    Energy Technology Data Exchange (ETDEWEB)

    Dawson, P; Feng, L; Penate-Quesada, L [Centre for Nanostructured Media, School of Maths and Physics, Queen' s University of Belfast, Belfast BT7 1NN (United Kingdom); Hill, G [EPSRC National Centre for III-V Technologies, Mappin Street, University ofSheffield, Sheffield S1 3JD (United Kingdom); Mitra, J, E-mail: P.dawson@qub.ac.uk

    2011-03-30

    Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of {approx}100 K) in the diode resistance-temperature (R{sub D}-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R{sub D}-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

  19. Raising the acceptance of the AP2-line

    International Nuclear Information System (INIS)

    Trbojevic, D.

    1989-01-01

    The 120 GeV Main Ring proton beam collides with the target at the end of the AP-1 line and creates antiprotons and other secondary particles. The AP-2 line transfers the negative particles from the target to the Debuncher. To provide a bigger antiproton stack size in the Accumulator, both the Debuncher as well as the AP-2 line acceptance have to be raised. This is a proposal for the improvement of the AP-2 line acceptance. The first part of the memo presents an acceptance examination of the existing AP-2 line by computer simulation, while the second presents a short proposal for aperture corrections. The computer program TURTLE was used to trace antiprotons through the AP-2 line without taking into account other negative charged particles. Betatron functions were obtained from the output of the SYNCH computer program. The SYNCH program was also used to check the dispersion match between the AP-2 line and the Debuncher. 3 refs., 6 figs., 5 tabs

  20. On-line control of the nonlinear dynamics for synchrotrons

    Science.gov (United States)

    Bengtsson, J.; Martin, I. P. S.; Rowland, J. H.; Bartolini, R.

    2015-07-01

    We propose a simple approach to the on-line control of the nonlinear dynamics in storage rings, based on compensation of the nonlinear resonance driving terms using beam losses as the main indicator of the strength of a resonance. The correction scheme is built on the analysis of the resonance driving terms in first perturbative order and on the possibility of using independent power supplies in the sextupole magnets, which is nowadays present in many synchrotron light sources. Such freedom allows the definition of "smart sextupole knobs" attacking each resonance separately. The compensation scheme has been tested at the Diamond light source and proved to be effective in opening up the betatron tune space, resonance free, available to the electron beam and to improve the beam lifetime.

  1. On-line control of the nonlinear dynamics for synchrotrons

    Directory of Open Access Journals (Sweden)

    J. Bengtsson

    2015-07-01

    Full Text Available We propose a simple approach to the on-line control of the nonlinear dynamics in storage rings, based on compensation of the nonlinear resonance driving terms using beam losses as the main indicator of the strength of a resonance. The correction scheme is built on the analysis of the resonance driving terms in first perturbative order and on the possibility of using independent power supplies in the sextupole magnets, which is nowadays present in many synchrotron light sources. Such freedom allows the definition of “smart sextupole knobs” attacking each resonance separately. The compensation scheme has been tested at the Diamond light source and proved to be effective in opening up the betatron tune space, resonance free, available to the electron beam and to improve the beam lifetime.

  2. Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

    Science.gov (United States)

    Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

    2018-05-01

    Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.

  3. Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

    2012-01-01

    In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

  4. Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

    Science.gov (United States)

    Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

    2014-05-01

    We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

  5. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

    International Nuclear Information System (INIS)

    Wang, Yaqi; Alur, Siddharth; Sharma, Yogesh; Tong, Fei; Thapa, Resham; Gartland, Patrick; Issacs-Smith, Tamara; Ahyi, Claude; Williams, John; Park, Minseo; Johnson, Mark; Paskova, Tanya; Preble, Edward A; Evans, Keith R

    2011-01-01

    Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 mΩ cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-of- merit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I–V measurements were also carried out to study the forward and reverse transportation mechanisms. (fast track communication)

  6. Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction

    International Nuclear Information System (INIS)

    Kalita, Golap; Hirano, Ryo; Ayhan, Muhammed E; Tanemura, Masaki

    2013-01-01

    We demonstrate fabrication of a Schottky junction diode with direct growth graphene on n-Si by the solid phase reaction approach. Metal-assisted crystallization of a-C thin film was performed to synthesize transfer-free graphene directly on a SiO 2 patterned n-Si substrate. Graphene formation at the substrate and catalyst layer interface is achieved in presence of a Co catalytic and CoO carbon diffusion barrier layer. The as-synthesized material shows a linear current–voltage characteristic confirming the metallic behaviour of the graphene structure. The direct grown graphene on n-Si substrate creates a Schottky junction with a potential barrier of 0.44 eV and rectification diode characteristic. Our finding shows that the directly synthesized graphene on Si substrate by a solid phase reaction process can be a promising technique to fabricate an efficient Schottky junction device. (paper)

  7. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

    International Nuclear Information System (INIS)

    De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

    2010-01-01

    The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Fabrication and characterization of n-AlGaAs/ GaAs Schottky diode for rectennas device application

    International Nuclear Information System (INIS)

    Norfarariyanti Parimon; Abdul Manaf Hashim; Farahiyah Mustafa

    2009-01-01

    Full text: Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectennas device application. Rectennas is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current?voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectennas device application. (author)

  9. Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

    Energy Technology Data Exchange (ETDEWEB)

    Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Osman, Mohd Nizam, E-mail: manaf@fke.utm.my [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

    2011-02-15

    Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

  10. AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

    International Nuclear Information System (INIS)

    Li-Wen, Sang; Zhi-Xin, Qin; Long-Bin, Cen; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang; Cai-Jing, Cheng; Hong-Yan, Zhao; Zheng-Xiong, Lu; Jia-Xin, Ding; Lan, Zhao; Jun-Jie, Si; Wei-Guo, Sun

    2008-01-01

    We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1 × 10 −6 A/cm 2 at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 × 10 12 cmHz 1/2 W −1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current

  11. Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

    International Nuclear Information System (INIS)

    Rahmani, Faezeh; Khosravinia, Hossein

    2016-01-01

    Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm 2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm −2 of Nickle-63 ( 63 Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure. - Highlights: • Silicon parameters were studied in betavoltaic batteries. • Studied betavoltaic batteries include p-n and Schottky barrier structures. • The p-n structure has higher conversion efficiency.

  12. Cumulative dose 60Co gamma irradiation effects on AlGaN/GaN Schottky diodes and its area dependence

    Science.gov (United States)

    Sharma, Chandan; Laishram, Robert; Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

    2018-04-01

    Cumulative dose gamma radiation effects on current-voltage characteristics of GaN Schottky diodes have been investigated. The different area diodes have been fabricated on AlGaN/GaN high electron mobility transistor (HEMT) epi-layer structure grown over SiC substrate and irradiated with a dose up to the order of 104 Gray (Gy). Post irradiation characterization shows a shift in the turn-on voltage and improvement in reverse leakage current. Other calculated parameters include Schottky barrier height, ideality factor and reverse saturation current. Schottky barrier height has been decreased whereas reverse saturation current shows an increase in the value post irradiation with improvement in the ideality factor. Transfer length measurement (TLM) characterization shows an improvement in the contact resistance. Finally, diodes with larger area have more variation in the calculated parameters due to the induced local heating effect.

  13. Simulations about self-absorption of tritium in titanium tritide and the energy deposition in a silicon Schottky barrier diode

    International Nuclear Information System (INIS)

    Li, Hao; Liu, Yebing; Hu, Rui; Yang, Yuqing; Wang, Guanquan; Zhong, Zhengkun; Luo, Shunzhong

    2012-01-01

    Simulations on the self-absorption of tritium electrons in titanium tritide films and the energy deposition in a silicon Schottky barrier diode are carried out using the Geant4 radiation transport toolkit. Energy consumed in each part of the Schottky radiovoltaic battery is simulated to give a clue about how to make the battery work better. The power and energy-conversion efficiency of the tritium silicon Schottky radiovoltaic battery in an optimized design are simulated. Good consistency with experiments is obtained. - Highlights: ► Simulation of the energy conversion inside the radiovoltaic battery is carried out. ► Energy-conversion efficiency in the simulation shows good consistency with experimental result. ► Inadequacy of the present configuration is studied in this work and improvements are proposed.

  14. Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

    International Nuclear Information System (INIS)

    Das, Subhashis; Majumdar, Shubhankar; Kumar, Rahul; Ghosh, Saptarsi; Biswas, Dhrubes

    2016-01-01

    An AlGaN/GaN heterostructure based metal–semiconductor–metal symmetrically bi-directional Schottky diode sensor structure has been employed to investigate acetone sensing and to analyze thermodynamics of acetone adsorption at low temperatures. The AlGaN/GaN heterostructure has been grown by plasma-assisted molecular beam epitaxy on Si (111). Schottky diode parameters at different temperatures and acetone concentrations have been extracted from I–V characteristics. Sensitivity and change in Schottky barrier height have been studied. Optimum operating temperature has been established. Coverage of acetone adsorption sites at the AlGaN surface and the effective equilibrium rate constant of acetone adsorption have been explored to determine the endothermic nature of acetone adsorption enthalpy.

  15. Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

    International Nuclear Information System (INIS)

    Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul; Osman, Mohd Nizam

    2011-01-01

    Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

  16. Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

    Science.gov (United States)

    Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

    2014-09-01

    Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

  17. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    Energy Technology Data Exchange (ETDEWEB)

    Moeen, M., E-mail: moeen@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Salemi, A.; Abedin, A.; Östling, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden)

    2016-08-31

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10{sup 20} cm{sup −3} and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K{sub 1/f} parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K{sub 1/f} = 4.7 × 10{sup −14} was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  18. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    International Nuclear Information System (INIS)

    Moeen, M.; Kolahdouz, M.; Salemi, A.; Abedin, A.; Östling, M.; Radamson, H.H.

    2016-01-01

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10 20 cm −3 and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K 1/f parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K 1/f = 4.7 × 10 −14 was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  19. A high-speed Schottky detector for ultra-wideband communications

    DEFF Research Database (Denmark)

    Valdecasa, Guillermo Silva; Cimoli, Bruno; Blanco Granja, Ángel

    2017-01-01

    This letter reviews the design procedure of a high‐speed Schottky video detector for high‐data‐rate communications within the ultra‐wideband (UWB) frequencies. The classic design approach for video detectors is extended with a mixer‐like analysis, which results in a more detailed assessment of th....... Using 0 dBm carrier power, the lowest measured conversion loss is 10 dB for a video frequency of 1.1 GHz and better than 13 dB up to 1.8 GHz....

  20. Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films

    Directory of Open Access Journals (Sweden)

    F. Schipani

    2012-09-01

    Full Text Available The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.

  1. Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

    Czech Academy of Sciences Publication Activity Database

    Hájková, Zdeňka; Ledinský, Martin; Vetushka, Aliaksi; Stuchlík, Jiří; Müller, Martin; Fejfar, Antonín; Bouša, Milan; Kalbáč, Martin; Frank, Otakar

    2017-01-01

    Roč. 676, May (2017), s. 82-88 ISSN 0009-2614 R&D Projects: GA ČR GA14-15357S Institutional support: RVO:68378271 ; RVO:61388955 Keywords : CVD graphene * microcrystalline silicon * solar cells * Schottky junctions * current-voltage curves * C-AFM Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 1.815, year: 2016

  2. Theory of warm ionized gases: equation of state and kinetic Schottky anomaly.

    Science.gov (United States)

    Capolupo, A; Giampaolo, S M; Illuminati, F

    2013-10-01

    Based on accurate Lennard-Jones-type interaction potentials, we derive a closed set of state equations for the description of warm atomic gases in the presence of ionization processes. The specific heat is predicted to exhibit peaks in correspondence to single and multiple ionizations. Such kinetic analog in atomic gases of the Schottky anomaly in solids is enhanced at intermediate and low atomic densities. The case of adiabatic compression of noble gases is analyzed in detail and the implications on sonoluminescence are discussed. In particular, the predicted plasma electron density in a sonoluminescent bubble turns out to be in good agreement with the value measured in recent experiments.

  3. Design and Characterization of 1.8-3.2 THz Schottky-based Harmonic Mixers

    OpenAIRE

    Bulcha, BT; Hesler, JL; Drakinskiy, V; Stake, J; Valavanis, A; Dean, P; Li, LH; Barker, NS

    2016-01-01

    A room-temperature Schottky diode-based WM-86 (WR-0.34) harmonic mixer was developed to build high-resolution spectrometers, and multi-pixel receivers in the THz region for applications such as radio astronomy, plasma diagnostics, and remote sensing. The mixer consists of a quartz-based Local Oscillator (LO), Intermediate-Frequency (IF) circuits, and a GaAs-based beam-lead THz circuit with an integrated diode. Measurements of the harmonic mixer were performed using a 2 THz solid-state source ...

  4. Microwave Schottky diagnostic systems for the Fermilab Tevatron, Recycler, and CERN Large Hadron Collider

    Directory of Open Access Journals (Sweden)

    Ralph J. Pasquinelli

    2011-07-01

    Full Text Available A means for noninvasive measurement of transverse and longitudinal characteristics of bunched beams in synchrotrons has been developed based on high sensitivity slotted waveguide pickups. The pickups allow for bandwidths exceeding hundreds of MHz while maintaining good beam sensitivity characteristics. Wide bandwidth is essential to allow bunch-by-bunch measurements by means of a fast gate. The Schottky detector system is installed and successfully commissioned in the Fermilab Tevatron, Recycler and CERN LHC synchrotrons. Measurement capabilities include tune, chromaticity, and momentum spread of single or multiple beam bunches in any combination. With appropriate calibrations, emittance can also be measured by integrating the area under the incoherent tune sidebands.

  5. Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures

    International Nuclear Information System (INIS)

    Morel, D.L.; Moustakas, T.D.

    1981-01-01

    The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x/ /Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence-band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band-gap regime

  6. Microscopic theory of warm ionized gases: equation of state and kinetic Schottky anomaly

    International Nuclear Information System (INIS)

    Capolupo, A; Giampaolo, S M; Illuminati, F

    2013-01-01

    Based on accurate Lennard-Jones type interaction potentials, we derive a closed set of state equations for the description of warm atomic gases in the presence of ionization processes. The specific heat is predicted to exhibit peaks in correspondence to single and multiple ionizations. Such kinetic analogue in atomic gases of the Schottky anomaly in solids is enhanced at intermediate and low atomic densities. The case of adiabatic compression of noble gases is analyzed in detail and the implications on sonoluminescence are discussed.

  7. Enhanced mixing characteristics of GaAs/3,4,9,10-perylenetetracarboxylic dianhydride Schottky diodes

    International Nuclear Information System (INIS)

    Ginev, G; Riedl, T; Parashkov, R; Johannes, H-H; Kowalsky, W

    2003-01-01

    The influences on the mixing properties of GaAs Schottky diodes containing an organic 3,4,9,10-perylenetetracarboxylic dianhydride layer were investigated. The frequency conversion ability of the devices was determined by considering the I-V characteristics and high frequency reflection parameters by using a mixing technique operated in the microwave range. The results show that an organic layer with 20 nm thickness enhances the diode conversion gain for mixing applications by 3 dB and lowers the device operating bias voltage by 0.1 V. This process is related to the specific properties of the organic semiconductor and resulting organic-inorganic interface

  8. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

    Science.gov (United States)

    Lee, Sungsik; Nathan, Arokia

    2016-10-01

    The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

  9. Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

    International Nuclear Information System (INIS)

    Patel, S.S.; Patel, B.H.; Patel, T.S.

    2008-01-01

    An Al/p-AgGaTe 2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe 2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Fundamental studies of graphene/graphite and graphene-based Schottky photovoltaic devices

    Science.gov (United States)

    Miao, Xiaochang

    In the carbon allotropes family, graphene is one of the most versatile members and has been extensively studied since 2004. The goal of this dissertation is not only to investigate the novel fundamental science of graphene and its three-dimensional sibling, graphite, but also to explore graphene's promising potential in modern electronic and optoelectronic devices. The first two chapters provide a concise introduction to the fundamental solid state physics of graphene (as well as graphite) and the physics at the metal/semiconductor interfaces. In the third chapter, we demonstrate the formation of Schottky junctions at the interfaces of graphene (semimetal) and various inorganic semiconductors that play dominating roles in today's semiconductor technology, such as Si, SiC, GaAs and GaN. As shown from their current-voltage (I -V) and capacitance-voltage (C-V) characteristics, the interface physics can be well described within the framework of the Schottky-Mott model. The results are also well consist with that from our previous studies on graphite based Schottky diodes. In the fourth chapter, as an extension of graphene based Schottky work, we investigate the photovoltaic (PV) effect of graphene/Si junctions after chemically doped with an organic polymer (TFSA). The power conversion efficiency of the solar cell improves from 1.9% to 8.6% after TFSA doping, which is the record in all graphene based PVs. The I -V, C-V and external quantum efficiency measurements suggest 12 that such a significant enhancement in the device performance can be attributed to a doping-induced decrease in the series resistance and a simultaneous increase in the built-in potential. In the fifth chapter, we investigate for the first time the effect of uniaxial strains on magneto-transport properties of graphene. We find that low-temperature weak localization effect in monolayer graphene is gradually suppressed under increasing strains, which is due to a strain-induced decreased intervalley

  11. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States); Crowell, Paul A. [School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States)

    2015-03-09

    Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

  12. Schottky barrier enhancement on n-InP solar cell applications

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1994-01-01

    It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical...... epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved...

  13. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  14. Anomalous Schottky specific heat and structural distortion in ferromagnetic PrAl2.

    Science.gov (United States)

    Pathak, Arjun K; Paudyal, D; Mudryk, Y; Gschneidner, K A; Pecharsky, V K

    2013-05-03

    Unique from other rare earth dialuminides, PrAl(2) undergoes a cubic to tetragonal distortion below T = 30 K in a zero magnetic field, but the system recovers its cubic symmetry upon the application of an external magnetic field of 10 kOe via a lifting of the 4f crystal field splitting. The nuclear Schottky specific heat in PrAl(2) is anomalously high compared to that of pure Pr metal. First principles calculations reveal that the 4f crystal field splitting in the tetragonally distorted phase of PrAl(2) underpins the observed unusual low temperature phenomena.

  15. White-light emission from porous-silicon-aluminium Schottky junctions

    International Nuclear Information System (INIS)

    Masini, G.; La Monica, S.; Maiello, G.

    1996-01-01

    Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminium treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region

  16. Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application

    International Nuclear Information System (INIS)

    Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Osman, Mohd Nizam

    2011-01-01

    A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  17. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

    Science.gov (United States)

    Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

    2016-03-01

    Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

  18. Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

    OpenAIRE

    Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

    2015-01-01

    We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is ...

  19. Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

    Science.gov (United States)

    Trushin, Maxim

    2018-04-01

    The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

  20. Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

    Science.gov (United States)

    Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

    2018-04-01

    The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

  1. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  2. Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Altuhov, V. I., E-mail: altukhovv@mail.ru; Kasyanenko, I. S.; Sankin, A. V. [North Caucasian Federal University, Institute of Service, Tourism and Design (Branch) (Russian Federation); Bilalov, B. A. [Dagestan State Technical University (Russian Federation); Sigov, A. S. [Moscow State Technical University of Radio Engineering, Electronics, and Automation (Russian Federation)

    2016-09-15

    A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC){sub 1–x}(AlN){sub x} structures. The results of calculations are compared to experimental data.

  3. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Purches, W. E. [School of Physics, UNSW, Sydney 2052 (Australia); Rossi, A.; Zhao, R. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Kafanov, S.; Duty, T. L. [School of Physics, UNSW, Sydney 2052 (Australia); Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052 (Australia); Dzurak, A. S. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia); Rogge, S.; Tettamanzi, G. C., E-mail: g.tettamanzi@unsw.edu.au [School of Physics, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia)

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  4. Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

    OpenAIRE

    Fangming Jin; Zisheng Su; Bei Chu; Pengfei Cheng; Junbo Wang; Haifeng Zhao; Yuan Gao; Xingwu Yan; Wenlian Li

    2016-01-01

    In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59?mA/cm2, an open-circuit voltage (Voc) of 1.06?V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5?G solar illumination at 100?mW/cm2. Device performance was substantiall...

  5. Ellipsometric study and application of rubrene thin film in organic Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Liang; Deng, Jinxiang, E-mail: jdeng@bjut.edu.cn; Gao, Hongli; Yang, Qianqian; Kong, Le; Cui, Min; Zhang, Zijia

    2016-12-01

    Highlights: • The optical constants of rubrene were studied by ellipsometry spectroscopic. • The α reveals direct allowed transition with corresponding energy 2.21 eV. • A Schottky diodes based on rubrene were fabricated. • The basic device parameters were determined by the I–V measurement. - Abstract: Rubrene thin film was deposited by thermal evaporation technique under high vacuum (∼10{sup −4} Pa). The film surface morphology was characterized by atomic force microscopy (AFM). Ellipsometric studies on rubrene thin film were presented for understanding its growth and optical characteristics by the Classical-Oscillator model. The analysis of the absorption coefficient (α) revealed the direct allowed transition with corresponding energy 2.21 eV of the rubrene film. In order to exploring the rubrene applications, Al/rubrene/ITO Schottky diode was fabricated. The basic device parameters, barrier height and ideality factor were determined by the I–V measurement. The log(I)–log(V) characteristic indicated three distinct regions. These regions followed ohmic conduction, TCL conduction and SCLC conduction mechanisms.

  6. Sub 20 meV Schottky barriers in metal/MoTe2 junctions

    Science.gov (United States)

    Townsend, Nicola J.; Amit, Iddo; Craciun, Monica F.; Russo, Saverio

    2018-04-01

    The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional solid state devices, they present a wide range of exciting new properties that is bound to become a crucial ingredient in the future of electronics. To utilise these properties for the prospect of electronics in general, and long-wavelength-based photodetectors in particular, the Schottky barriers formed upon contact with a metal and the contact resistance that arises at these interfaces have to be measured and controlled. We present experimental evidence for the formation of Schottky barriers as low as 10 meV between MoTe2 and metal electrodes. By varying the electrode work functions, we demonstrate that Fermi level pinning due to metal induced gap states at the interfaces occurs at 0.14 eV above the valence band maximum. In this configuration, thermionic emission is observed for the first time at temperatures between 40 K and 75 K. Finally, we discuss the ability to tune the barrier height using a gate electrode.

  7. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Directory of Open Access Journals (Sweden)

    Zhang Teng-Fei

    2016-11-01

    Full Text Available In this study, we present a simple ultraviolet (UV light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  8. Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

    Science.gov (United States)

    Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

    2017-07-01

    Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

  9. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He

    2014-08-11

    Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

  10. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

    Science.gov (United States)

    Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

    2014-04-24

    A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.

    Science.gov (United States)

    Shen, Jun; Liu, Xiangzhi; Song, Xuefen; Li, Xinming; Wang, Jun; Zhou, Quan; Luo, Shi; Feng, Wenlin; Wei, Xingzhan; Lu, Shirong; Feng, Shuanglong; Du, Chunlei; Wang, Yuefeng; Shi, Haofei; Wei, Dapeng

    2017-05-11

    Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz -1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 10 13 cm Hz 1/2 W -1 and 2.27 × 10 14 cm Hz 1/2 W -1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 10 7 , time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W -1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

  12. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Science.gov (United States)

    Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao

    2017-08-01

    In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  13. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  14. Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

    Directory of Open Access Journals (Sweden)

    K. AMEUR

    2014-05-01

    Full Text Available In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100 substrates using a Glow Discharge Source (GDS in ultra high vacuum. The I (V curves have exhibited anomalous two-step (kink forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V and C(V curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current Is, the barrier height jB, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG and this was noticed in the presentation of characteristics C(V.

  15. Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

    Science.gov (United States)

    Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

    2017-06-07

    We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

  16. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S. [U.S. Army Research Laboratory, WMRD, Aberdeen Proving Ground, Maryland 21005 (United States); Shanholtz, E. R. [ORISE, Belcamp, Maryland 21017 (United States)

    2016-07-14

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  17. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

    Science.gov (United States)

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2015-05-21

    Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0-20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung's and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung's methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

  18. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    2015-05-01

    Full Text Available Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0–20 min of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung’s and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung’s methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

  19. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

    2012-05-15

    The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

  20. Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

    International Nuclear Information System (INIS)

    Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

    2010-01-01

    This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    International Nuclear Information System (INIS)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S.; Shanholtz, E. R.

    2016-01-01

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  2. Modeling and fabrication of 4H-SiC Schottky junction

    Science.gov (United States)

    Martychowiec, A.; Pedryc, A.; Kociubiński, A.

    2017-08-01

    The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

  3. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

    International Nuclear Information System (INIS)

    Asghar, M.; Mahmood, K.; Rabia, S.; BM, S.; Shahid, M. Y.; Hasan, M. A.

    2013-01-01

    In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 - 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Fap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Fap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(ds) (0.02 V) at zero bais. (author)

  4. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

    International Nuclear Information System (INIS)

    Asghar, M; Mahmood, K; Rabia, S; M, Samaa B; Shahid, M Y; Hasan, M A

    2014-01-01

    In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 – 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Φ ap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Φ ap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(δ s ) (0.02 V) at zero bais

  5. Fabrication of Schottky Junction Between Au and SrTiO3

    Science.gov (United States)

    Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

    2001-05-01

    A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

  6. Characterization of plasma etching damage on p-type GaN using Schottky diodes

    International Nuclear Information System (INIS)

    Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

  7. Thermal stability of TaN Schottky contacts on n-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Hayes, J.R.; Kim, D-W.; Meidia, H.; Mahajan, S

    2003-02-07

    The thermal stability and electrical characteristics of tantalum-nitrogen alloy Schottky contacts on n-GaN were investigated. Non-stoichiometric {delta}-phase (40 atomic percent nitrogen) tantalum nitride contacts exhibited good electrical properties up to an annealing temperature of 600 deg. C. However, they degrade rapidly above this temperature due to outward diffusion of Ga and presumably nitrogen into the {delta}-phase tantalum nitride. It is surmised that excess Ta reacts with N at the GaN surface, freeing Ga which then diffuses into the TaN layer. Stoichiometric TaN Schottky contacts were stable at temperatures as high as 800 deg. C and had far superior electrical performance. This stems from the thermodynamic stability of the stoichiometric TaN/GaN interface. {delta}-phase TaN had I-V and C-V barrier heights of 0.55 eV and 0.8 eV respectively. On the other hand, TaN had an I-V barrier height near 0.7 eV and a C-V barrier height near 1.2 eV. The ideality factors for both {delta}-phase TaN and TaN were above 1.8 at all annealing temperatures, suggesting tunneling contributes significantly to current transport.

  8. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  9. Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

    KAUST Repository

    Shaikh, Parvez Abdul Ajij

    2016-08-16

    Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications. © 2016 The Royal Society of Chemistry.

  10. Measurements of femtosecond pulse temporal profile by means of a Michelson interferometer with a Schottky junction.

    Science.gov (United States)

    Ling, Yan; Lu, Fang

    2006-12-20

    We introduce a new method for femtosecond pulse shape measurement. The interference of two pulses is employed rather than the second-harmonic generation (SHG). Usually, the measurements of the femtosecond pulse is realized by an interferometer in combination with a nonlinear optical material, while the measurement that we describe is realized by means of a Michelson interferometer with a Schottky junction. Only a metal-semiconductor junction (Schottky junction) is needed, and neither the nonlinear optical material nor a photodetector is included. The two-photon absorption arises when the light is strong enough, while there is only a one-photon absorption when the light is weak. And the calculations are in good agreement with the experimental results. In principle, the new technique could be used for the measuring of pulses with any duration and with very low power. Unlike the SHG scheme, in the new method the quality of optics, mechanics, and other elements of the scheme are not essential, and the measurement is easily realized, but the results are quite precise and very sensitive to the light.

  11. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

    Directory of Open Access Journals (Sweden)

    V. Naval

    2010-01-01

    Full Text Available Wide-bandgap semiconductors such as zinc selenide (ZnSe have become popular for ultraviolet (UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm and UV-B (280–320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

  12. Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

    International Nuclear Information System (INIS)

    Barış, Behzad

    2013-01-01

    Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz–500 kHz at room temperature. The C–V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance–voltage (R s −V) gave a peak in the depletion region at all frequencies. The density of interface states (N ss ) and relaxation time (τ) distribution profiles as a function of applied voltage bias have been determined from the C–V and G–V measurements. The values of the N ss and τ have been calculated in the ranges of 8.37×10 11 –4.85×10 11 eV −1 cm −2 and 5.17×10 −6 –1.02×10 −5 s, respectively

  13. Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2013-10-01

    Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz–500 kHz at room temperature. The C–V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance–voltage (R{sub s}−V) gave a peak in the depletion region at all frequencies. The density of interface states (N{sub ss}) and relaxation time (τ) distribution profiles as a function of applied voltage bias have been determined from the C–V and G–V measurements. The values of the N{sub ss} and τ have been calculated in the ranges of 8.37×10{sup 11}–4.85×10{sup 11} eV{sup −1} cm{sup −2} and 5.17×10{sup −6}–1.02×10{sup −5} s, respectively.

  14. Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

    Science.gov (United States)

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

  15. Influence of B doping on the carrier transport mechanism and barrier height of graphene/ZnO Schottky contact

    Science.gov (United States)

    Li, Yapeng; Li, Yingfeng; Zhang, Jianhua; Tong, Ting; Ye, Wei

    2018-03-01

    The ZnO films were fabricated on the surface of n-Si(1 1 1) substrate using the sol-gel method, and the graphene was then transferred to its surface for the fabrication of the graphene/ZnO Schottky contact. The results showed that ZnO films presented a strong (0 0 2) preferred direction, and that the particle sizes on the surface decreased as the doping concentration of B ions increased. The electrical properties of the graphene/ZnO Schottky contact were measured by using current-voltage measurements. It was found that the graphene/ZnO Schottky contact showed a fine rectification behavior when the doping concentration of B ions was increased. However, when the doping concentration of the B ions increased to 0.15 mol l-1, the leakage current increased and rectification behavior weakened. This was due to the Fermi level pinning caused by the presence of the O vacancy at the interface of the graphene/ZnO Schottky contact.

  16. Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

    International Nuclear Information System (INIS)

    Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

    2009-01-01

    In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

  17. Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

    Science.gov (United States)

    Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

    2018-03-01

    Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

  18. Local irradiation effects of one-dimensional ZnO based self-powered asymmetric Schottky barrier UV photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yaxue [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Qi, Junjie, E-mail: junjieqi@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Biswas, Chandan [Department of Electrical Engineering, University of California Los Angeles, California 90095 (United States); Li, Feng; Zhang, Kui; Li, Xin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083 (China)

    2015-09-15

    A self-powered metal-semiconductor-metal (MSM) UV photodetector was successfully fabricated based on Ag/ZnO/Au structure with asymmetric Schottky barriers. This exhibits excellent performance compared to many previous studies. Very high photo-to-dark current ratio (approximately 10{sup 5}–10{sup 6}) was demonstrated without applying any external bias, and very fast switching time of less than 30 ms was observed during the investigation. Opposite photocurrent direction was generated by irradiating different Schottky diodes in the fabricated photodetector. Furthermore, the device performance was optimized by largely irradiating both the ZnO microwire (MW) junctions. Schottky barrier effect theory and O{sub 2} adsorption–desorption theories were used to investigate the phenomenon. The device has potential applications in self-powered UV detection field and can be used as electrical power source for electronic, optoelectronic and mechanical devices. - Highlights: • A self-powered Schottky barrier UV photodetector based on 1-D ZnO is fabricated. • For the first time we investigate the local irradiation effects of UV detector. • Irradiating both the junctions and ZnO can optimize the performance of the device.

  19. Phase locking of 2.324 and 2.959 terahertz quantum cascade lasers using a Schottky diode harmonic mixer.

    Science.gov (United States)

    Danylov, Andriy; Erickson, Neal; Light, Alexander; Waldman, Jerry

    2015-11-01

    The 23rd and 31st harmonics of a microwave signal generated in a novel THz balanced Schottky diode mixer were used as a frequency stable reference source to phase lock solid-nitrogen-cooled 2.324 and 2.959 THz quantum cascade lasers. Hertz-level frequency stability was achieved, which was maintained for several hours.

  20. A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

    Science.gov (United States)

    Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

    2018-01-01

    Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

  1. Ultra-wideband balanced schottky envelope detector for data communication with high bitrate to carrier frequency ratio

    DEFF Research Database (Denmark)

    Granja, Angel Blanco; Cimoli, Bruno; Rodriguez, Sebastian

    2017-01-01

    This paper reports on an ultra-wideband (UWB) Schottky diode based balanced envelope detector for the L-, S-, C- and X- bands. The proposed circuit consists of a balun that splits the input signal into two 180° out of phase signals, a balanced detector, that demodulates the two signals, a low pass...

  2. Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2013-01-01

    Roč. 28, č. 5 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Gallium nitride * Schottky barrier diodes * Graphite Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

  3. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

    2015-01-01

    Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

  4. Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

    Science.gov (United States)

    Nguyen, Chuong V.

    2018-04-01

    In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

  5. Multiloop world-line Green functions from string theory

    International Nuclear Information System (INIS)

    Roland, K.; Sato, H.T.

    1996-01-01

    We show how the multiloop bosonic Green function of closed string theory reduces to the world-line Green function as defined by Schmidt and Schubert in the limit where the string world-sheet degenerates into a Φ 3 particle diagram. To obtain this correspondence we have to make an appropriate choice of the local coordinates defined on the degenerate string world sheet. We also present a set of simple rules that specify, in the explicit setting of the Schottky parametrization, which is the corner of moduli space corresponding to a given multiloop Φ 3 diagram. (orig.)

  6. Interface feature characterization and Schottky interfacial layer confirmation of TiO{sub 2} nanotube array film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, 341300 Ganzhou (China); Tang, Ningxin; Yang, Hongzhi; Leng, Xian [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Zou, Jianpeng, E-mail: zoujp@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China)

    2015-11-15

    Highlights: • Interfacial fusion of TiO{sub 2} nanotube film increases with annealing temperature. • Interface bonding force of the film increases with annealing temperature. • We report the forth stage of nanofibers formation in the growing mechanism. • TiO{sub 2} nanotubes grow from Schottky interface layer rather than from Ti substrate. • Schottky interface layer's thickness of 35–45 nm is half the diameter of nanotube. - Abstract: We report here characterization of the interfacial microstructure and properties of titanium dioxide (TiO{sub 2}) nanotube array films fabricated by anodization. Field effect scanning electron microscopy (FESEM), X-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM), selected area electron diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the interface of the film. With increasing annealing temperature from 200 °C to 800 °C, the interfacial fusion between the film and the Ti substrate increased. The phase transformation of the TiO{sub 2} nanotube film from amorphous to anatase to rutile took place gradually; as the phase transformation progressed, the force needed to break the film increased. The growth of TiO{sub 2} nanotube arrays occurs in four stages: barrier layer formation, penetrating micropore formation, regular nanotube formation, and nanofiber formation. The TiO{sub 2} nanotubes grow from the Schottky interface layer rather than from the Ti substrate. The Schottky interface layer's thickness of 35–45 nm was identified as half the diameter of the corresponding nanotube, which shows good agreement to the Schottky interface layer growth model. The TiO{sub 2} nanotube film was amorphous and the Ti substrate was highly crystallized with many dislocation walls.

  7. Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

    International Nuclear Information System (INIS)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-01-01

    We report the current–voltage (I–V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I–V characteristic in the temperature range of 280–400 K. This is to study the effect of temperature on the I–V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A * was 10.32 A·cm −2 ·K −2 , which is close to the theoretical value of 9.4 A·cm −2 ·K −2 for n-InP. The temperature dependence of the I–V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I–V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP. (paper)

  8. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  9. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    Science.gov (United States)

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  10. Mediating broadband light into graphene–silicon Schottky photodiodes by asymmetric silver nanospheroids: effect of shape anisotropy

    Science.gov (United States)

    Bhardwaj, Shivani; Parashar, Piyush K.; Roopak, Sangita; Ji, Alok; Uma, R.; Sharma, R. P.

    2018-05-01

    Designing thinner, more efficient and cost-effective 2D materials/silicon Schottky photodiodes using the plasmonic concept is one of the most recent quests for the photovoltaic research community. This work demonstrates the enhanced performance of graphene–Si Schottky junction solar cells by introducing asymmetric spheroidal shaped Ag nanoparticles (NPs) embedded in a graphene monolayer (GML). The optical signatures of these Ag NPs (oblate, ortho-oblate, prolate and ortho-prolate) have been analyzed by discrete dipole approximation in terms of extinction efficiency and surface plasmon resonance tunability, against the quasi-static approximation. The spatial field distribution is enhanced by optimizing the size (a eff  =  100 nm) and aspect ratio (0.4) for all of the utilized Ag NPs with an optimized graphene environment (t  =  0.1 nm). An improvement of photon absorption in the thin Si wafer for the polychromatic spectral region (λ ~ 300–1100 nm) under an AM 1.5 G solar spectrum has been observed. This resulted in a photocurrent enhancement from 7.98 mA cm‑2 to 10.0 mA cm‑2 for oblate-shaped NPs integrated into GML/Si Schottky junction solar cells as compared to the bare cell. The structure used in this study to improve the graphene–Si Schottky junction’s performance is also advantageous for other graphene-like 2D material-based Schottky devices.

  11. Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

    Science.gov (United States)

    Brezeanu, G.; Pristavu, G.; Draghici, F.; Badila, M.; Pascu, R.

    2017-08-01

    In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high-temperature evaluation of SiC Schottky contacts, with discrete barrier height non-uniformity, is introduced in order to determine the temperature interval and bias domain where electrical behavior of the devices can be described by the thermionic emission theory (has a quasi-ideal performance). A minimal set of parameters, the effective barrier height and peff, the non-uniformity factor, is associated. Model-extracted parameters are discussed in comparison with literature-reported results based on existing inhomogeneity approaches, in terms of complexity and physical relevance. Special consideration was given to models based on a Gaussian distribution of barrier heights on the contact surface. The proposed methodology is validated by electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC), where a discrete barrier distribution can be considered. The same method is applied to inhomogeneous Pt/4H-SiC contacts. The forward characteristics measured at different temperatures are accurately reproduced using this inhomogeneous barrier model. A quasi-ideal behavior is identified for intervals spanning 200 °C for all measured Schottky samples, with Ni and Pt contact metals. A predictable exponential current-voltage variation over at least 2 orders of magnitude is also proven, with a stable barrier height and effective area for temperatures up to 400 °C. This application-oriented characterization technique is confirmed by using model parameters to fit a SiC-Schottky high temperature sensor's response.

  12. Silver-Nanowire-Embedded Transparent Metal-Oxide Heterojunction Schottky Photodetector.

    Science.gov (United States)

    Abbas, Sohail; Kumar, Mohit; Kim, Hong-Sik; Kim, Joondong; Lee, Jung-Ho

    2018-05-02

    We report a self-biased and transparent Cu 4 O 3 /TiO 2 heterojunction for ultraviolet photodetection. The dynamic photoresponse improved 8.5 × 10 4 % by adding silver nanowires (AgNWs) Schottky contact and maintaining 39% transparency. The current density-voltage characteristics revealed a strong interfacial electric field, responsible for zero-bias operation. In addition, the dynamic photoresponse measurement endorsed the effective holes collection by embedded-AgNWs network, leading to fast rise and fall time of 0.439 and 0.423 ms, respectively. Similarly, a drastic improvement in responsivity and detectivity of 187.5 mAW -1 and of 5.13 × 10 9 Jones, is observed, respectively. The AgNWs employed as contact electrode can ensure high-performance for transparent and flexible optoelectronic applications.

  13. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-01

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  14. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations.

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-06

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  15. Graphene barristor, a triode device with a gate-controlled Schottky barrier.

    Science.gov (United States)

    Yang, Heejun; Heo, Jinseong; Park, Seongjun; Song, Hyun Jae; Seo, David H; Byun, Kyung-Eun; Kim, Philip; Yoo, InKyeong; Chung, Hyun-Jong; Kim, Kinam

    2012-06-01

    Despite several years of research into graphene electronics, sufficient on/off current ratio I(on)/I(off) in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier's height to be tuned to 0.2 electron volt by adjusting graphene's work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits.

  16. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

    Science.gov (United States)

    Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

    2018-06-01

    Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

  17. Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of {alpha} phase brass

    Energy Technology Data Exchange (ETDEWEB)

    Bond, John W., E-mail: jwb13@le.ac.u [Forensic Research Centre, University of Leicester, Leicester LE1 7 EA (United Kingdom)

    2011-04-01

    By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of {alpha} phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.

  18. Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

    International Nuclear Information System (INIS)

    Kachari, T.; Wary, G.; Rahman, A.

    2010-01-01

    Thin film Al/(p)Bi 2 S 3 Schottky junctions were prepared by vacuum evaporation under pressure 10 -6 Torr. The p-type Bi 2 S 3 thin films with acceptor concentration (3.36-7.33)x10 16 /cm 3 were obtained by evaporating 'In' along with Bi 2 S 3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.

  19. Upgrade of the LHC Schottky Monitor, Operational Experience and First Results

    CERN Document Server

    Betz, Michael; Lefèvre, Thibaut; Wendt, Manfred

    2016-01-01

    The LHC Schottky system allows the measurement of beam parameters such as tune and chromaticity in an entirely non-invasive way by extracting information from the statistical fluctuations in the incoherent motion of particles. The system was commissioned in 2011 and provided satisfactory beam-parameter measurements during LHC run 1 for lead-ions. However, for protons its usability was substantially limited due to strong interfering signals originating from the coherent motion of the particle bunch. The system has recently been upgraded with optimized travelling-wave pick-ups and an improved 4.8~GHz microwave signal path, with the front-end and the triple down-mixing chain optimized to reduce coherent signals. Design and operational aspects for the complete system are shown and the results from measurements with LHC beams in Run II are presented and discussed.

  20. Untersuchung eines breitbandigen Koaxial-Hohlleiterübergangs für einen Schottky-Strahldiagnosedetektor

    CERN Document Server

    Ehret, M; Wendt, M

    In der vorliegenden Arbeit wurde ein Koaxial-Hohlleiterübergang im Mikrowellenbereich (4.8 GHz) untersucht und verbessert. Diese Kopplung ist eine der Schlüsselstellen des sogenannten „Schottky-Detektors“. Dieser Detektor befindet sich innerhalb des Teilchenbeschleunigers des Large Hadron Colliders am CERN. Während der Arbeit wurden verschiedene Untersuchungen am Detektor durchgeführt und anhand der ermittelten Ergebnisse eine veränderte Kopplerstruktur entwickelt. Diese Struktur wurde zuerst anhand von verschiedenen Modellen in einer elektromagnetischen Feldsimulation überprüft und mit Hilfe verschiedener Algorithmen verifiziert. Im nächsten Schritt wurde ein Testaufbau entwickelt, mit dem eine Überprüfung und eine abschließende Betrachtung der Ergebnisse möglich war. Es konnte gezeigt werden, dass mit der neu entwickelten Struktur die Kopplereigenschaften wesentlich verbessert und die Zielvorgaben sogar deutlich übertroffen wurden.

  1. Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

    International Nuclear Information System (INIS)

    Mao, Shimin; Anderson, Daniel D.; Shang, Tao; Park, Byoungnam; Dillon, Shen J.

    2014-01-01

    This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area

  2. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

    Science.gov (United States)

    Konishi, Keita; Goto, Ken; Murakami, Hisashi; Kumagai, Yoshinao; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2017-03-01

    Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n--Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ.cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current-voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.

  3. Field plate engineering for GaN-based Schottky barrier diodes

    International Nuclear Information System (INIS)

    Lei Yong; Shi Hongbiao; Lu Hai; Chen Dunjun; Zhang Rong; Zheng Youdou

    2013-01-01

    The practical design of GaN-based Schottky barrier diodes (SBDs) incorporating a field plate (FP) structure necessitates an understanding of their working mechanism and optimization criteria. In this work, the influences of the parameters of FPs upon breakdown of the diode are investigated in detail and the design rules of FP structures for GaN-based SBDs are presented for a wide scale of material and device parameters. By comparing three representative dielectric materials (SiO 2 , Si 3 N 4 and Al 2 O 3 ) selected for fabricating FPs, it is found that the product of dielectric permittivity and critical field strength of a dielectric material could be used as an index to predict its potential performance for FP applications. (semiconductor devices)

  4. High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane.

    Science.gov (United States)

    Cho, Minkyu; Yun, Jeonghoon; Kwon, Donguk; Kim, Kyuyoung; Park, Inkyu

    2018-04-18

    High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H 2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H 2 sensitivity (Δ I/ I 0 > 700-0.5% H 2 concentrations) and fast response time (τ 10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

  5. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  6. High energy proton irradiation effects on SiC Schottky rectifiers

    International Nuclear Information System (INIS)

    Nigam, S.; Kim, Jihyun; Ren, F.; Chung, G.Y.; MacMillan, M.F.; Dwivedi, R.; Fogarty, T.N.; Wilkins, R.; Allums, K.K.; Abernathy, C.R.; Pearton, S.J.; Williams, J.R.

    2002-01-01

    4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5x10 7 -5x10 9 cm -2 . The reverse breakdown voltage decreased from ∼500 V in unirradiated devices to ∼-450 V after the highest proton dose. The reverse leakage current at -250 V was approximately doubled under these conditions. The forward current at -2 V decreased by ∼1% (fluence of 5x10 7 cm -2 ) to ∼42% (fluence of 5x10 9 cm -2 ), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5x10 8 cm -2 , but were more strongly affected (increase of 40%-75%) at the highest dose employed

  7. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    Energy Technology Data Exchange (ETDEWEB)

    Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

    2013-12-16

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

  8. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    International Nuclear Information System (INIS)

    Seyedi, M. A.; Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.

    2013-01-01

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields 2 , which shows a strong possibility for high-speed applications with a broad area device

  9. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

    International Nuclear Information System (INIS)

    Wang Yuan; Zhang Yimen; Zhang Yuming; Tang Xiaoyan

    2003-01-01

    A novel SiC metal-oxide-semiconductor field-effect transistor (SiC SBSD-MOSFET) with Schottky barrier contacts for source and drain is presented in this paper. This kind of device gives a fabrication advantage of avoiding the steps of ion implantation and annealing at high temperatures of the conventional SiC MOSFET. Also it has no problems of crystal damage caused by ion implantation and low activation rate of implanted atoms. The operational mechanism of this device is analyzed and its characteristics are comparable to the conventional SiC MOSFET from the simulation with MEDICI. The effects of different metal workfunctions, oxide thickness, and gate length on the device performance are discussed

  10. Plasmonic silicon Schottky photodetectors: The physics behind graphene enhanced internal photoemission

    Directory of Open Access Journals (Sweden)

    Uriel Levy

    2017-02-01

    Full Text Available Recent experiments have shown that the plasmonic assisted internal photoemission from a metal to silicon can be significantly enhanced by introducing a monolayer of graphene between the two media. This is despite the limited absorption in a monolayer of undoped graphene ( ∼ π α = 2.3 % . Here we propose a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor. Interface disorder is crucial to overcome the momentum mismatch in the internal photoemission process. Our results show that quantum efficiencies in the range of few tens of percent are obtainable under reasonable experimental assumptions. This insight may pave the way for the implementation of compact, high efficiency silicon based detectors for the telecom range and beyond.

  11. Schottky x-ray detectors based on a bulk β-Ga2O3 substrate

    Science.gov (United States)

    Lu, Xing; Zhou, Leidang; Chen, Liang; Ouyang, Xiaoping; Liu, Bo; Xu, Jun; Tang, Huili

    2018-03-01

    β-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga2O3 SBDs. Furthermore, transient response of the β-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga2O3 based devices for X-ray detection.

  12. Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    P. Pipinys

    2010-01-01

    Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

  13. Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Francesco Dell’Olio

    2016-10-01

    Full Text Available A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.

  14. Effect of cooling on the efficiency of Schottky varactor frequency multipliers at millimeter waves

    Science.gov (United States)

    Louhi, Jyrki; Raiesanen, Antti; Erickson, Neal

    1992-01-01

    The efficiency of the Schottky diode multiplier can be increased by cooling the diode to 77 K. The main reason for better efficiency is the increased mobility of the free carriers. Because of that the series resistance decreases and a few dB higher efficiency can be expected at low input power levels. At high output frequencies and at high power levels, the current saturation decreases the efficiency of the multiplication. When the diode is cooled the maximum current of the diode increases and much more output power can be expected. There are also slight changes in the I-V characteristic and in the diode junction capacitance, but they have a negligible effect on the efficiency of the multiplier.

  15. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  16. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors determining its sensitivity and resolution were discussed. In this paper, we demonstrate the technique on MeV boron implantation induced defects in an Au-Si Schottky junction. SIDLTS measurements are compared with capacitance DLTS measurements over the temperature range, 100-300 K. SIDLTS analyses indicate the presence of two levels, one of which was positively identified as the E c - 0.23 eV divacancy level. The high sensitivity of SIDLTS is verified and the advantages and limitations of the technique are discussed in light of non-exponential components in the charge transient response. Reasons for several undetected levels are also discussed

  17. Schottky barrier diode embedded AlGaN/GaN switching transistor

    International Nuclear Information System (INIS)

    Park, Bong-Ryeol; Lee, Jung-Yeon; Lee, Jae-Gil; Lee, Dong-Myung; Cha, Ho-Young; Kim, Moon-Kyung

    2013-01-01

    We developed a Schottky barrier diode (SBD) embedded AlGaN/GaN switching transistor to allow negative current flow during off-state condition. An SBD was embedded in a recessed normally-off AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET). The fabricated device exhibited normally-off characteristics with a gate threshold voltage of 2.8 V, a diode turn-on voltage of 1.2 V, and a breakdown voltage of 849 V for the anode-to-drain distance of 8 µm. An on-resistance of 2.66 mΩcm 2 was achieved at a gate voltage of 16 V in the forward transistor mode. Eliminating the need for an external diode, the SBD embedded switching transistor has advantages of significant reduction in parasitic inductance and chip area. (paper)

  18. Effect of dissolved hydrogen on Schottky barrier height of Fe-Cr alloy heterojunction

    Science.gov (United States)

    Berahim, A. N.; Zaharudin, M. Z.; Ani, M. H.; Arifin, S. K.

    2018-01-01

    The presence of water vapour at high temperature oxidation has certain effects on ferritic alloy in comparison to dry environment. It is hypothesized that at high temperature; water vapour provides hydrogen, which will dissolve into ferritic alloy substrate and altering their electronic state at the metal-oxide interface. This work aimed to clarify the change in electronic state of metal-oxide heterojunction with the presence of hydrogen/water vapour. In this study, the Schottky Barrier (SB) was created by sputtering Cr2O3 onto prepared samples by using RF Magnetron sputtering machine. The existence of Fe/Cr2O3 junction was characterized by using XRD. The surfaces were observed by using Optical Microscope (OM) and Scanning Electron Microscope (SEM). The samples were then exposed in dry and humid condition at temperature of 473 K and 1073 K. In dry condition, 100% Ar is flown inside the furnace, while in wet condition mixture of 95% Ar and 5% H was used. I-V measurement of the junction was done to determine the Schottky Barrier Height(SBH) of the samples in the corresponding ambient. The results show that in Fe/Cr2O3 junction, with presence of hydrogen at temperature 473 K; the SBH was reduced by the scale factor of 1.054 and at 1073 K in wet ambient by factor of 1.068. Meanwhile, in Fe-Cr/Cr2O3 junction with presence of hydrogen, the value of SBH was increased by scale factor of 1.068 at temperature 473 K while at 1073 K, the SBH also increased by factor of 1.009.

  19. Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

    International Nuclear Information System (INIS)

    Di Bartolomeo, Antonio

    2016-01-01

    In the past decade graphene has been one of the most studied materials for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the existing semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.

  20. High-temperature Schottky diode characteristics of bulk ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre; Tuezemen, S; Kilic, Bayram; Coskun, C [Department of Physics, Faculty of Arts and Sciences, Atatuerk University, 25240 Erzurum (Turkey)

    2007-05-16

    Current-voltage (I-V) measurements of Ag/n-ZnO have been carried out at temperatures of 200-500 K in order to understand the temperature dependence of the diode characteristics. Forward-bias I-V analysis results in a Schottky barrier height of 0.82 eV and an ideality factor of 1.55 at room temperature. The barrier height of 0.74 eV and Richardson constant of 0.248 A K{sup -2} cm{sup -2} were also calculated from the Richardson plot, which shows nearly linear characteristics in the temperature range 240-440 K. From the nk{sub b}T/q versus k{sub b}T/q graph, where n is ideality factor, k{sub b} the Boltzmann constant, T the temperature and q the electronic charge we deduce that thermionic field emission (TFE) is dominant in the charge transport mechanism. At higher sample temperatures (>440 K), a trap-assisted tunnelling mechanism is proposed due to the existence of a deep donor situated at E{sub c}-0.62 eV with 3.3 x 10{sup -15} cm{sup 2} capture cross section observed by both deep-level transient spectroscopy (DLTS) and lnI{sub 0} versus 1/k{sub b}T plots. The ideality factor almost remains constant in the temperature range 240-400 K, which shows the stability of the Schottky contact in this temperature range.

  1. Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

    International Nuclear Information System (INIS)

    Saha, A.R.; Chattopadhyay, S.; Bose, C.; Maiti, C.K.

    2005-01-01

    Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region

  2. Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A.R. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)]. E-mail: ars.iitkgp@gmail.com; Chattopadhyay, S. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India); School of Electrical, Electronics and Computer Engineering, University of Newcastle, Newcastle upon Tyne (United Kingdom); Bose, C. [Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta 700032 (India); Maiti, C.K. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)

    2005-12-05

    Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region.

  3. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Jin, Jidong [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Du, Lulu; Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); School of Physics, Shandong University, Jinan 250100 (China)

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  4. Determination of the characteristics of a Schottky barrier formed by latent finger mark corrosion of brass

    International Nuclear Information System (INIS)

    Bond, J W

    2009-01-01

    The ideality factor (η) and barrier height (φ B ) for a metal-copper(I) oxide rectifying contact formed by the latent finger mark corrosion of α phase brass have been determined from forward bias I/V characteristics in the range 0.4 V ≤ V ≤ 0.55 V. Rectifying contacts formed from the finger mark deposits of different people gave η = 1.5-1.6 ± 0.1 and φ B = 0.49-0.52 ± 0.04 V. A Mott-Schottky plot of capacitance-voltage measurements in reverse bias gave the built in potential ψ bi = 0.4 ± 0.1 V, the gradient of the plot confirming the conductivity of the finger mark corrosion as p type. X-ray photoelectron spectroscopy spectra of the corrosion showed that Cu(I), Cu(II) and Zn(II) can co-exist on the surface, the Cu(I) : Cu(II) and Zn : Cu ratios determining whether a rectifying contact is formed. Initial findings suggest that when the concentration of Cu(I) dominates the Cu(I) : Cu(II) ratio (approximately 6 : 1), or when Cu(II) is absent, a rectifying contact can be formed subject to the Zn : Cu ratio being approximately 1 : 3. As the surface concentration of zinc increases, the rectifying contact is degraded until the concentration of zinc approaches that of copper when no evidence of a Schottky barrier is observed and the contact appears ohmic.

  5. Fabrication and electrical properties of organic-on-inorganic Schottky devices

    International Nuclear Information System (INIS)

    Guellue, Oe; Biber, M; Tueruet, A; Cankaya, M

    2008-01-01

    In this paper, we fabricated an Al/new fuchsin/p-Si organic-inorganic (OI) Schottky diode structure by direct evaporation of an organic compound solution on a p-Si semiconductor wafer. A direct optical band gap energy value of the new fuchsin organic film on a glass substrate was obtained as 1.95 eV. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of the OI device were carried out at room temperature. From the I-V characteristics, it was seen that the Al/new fuchsin/p-Si contacts showed good rectifying behavior. An ideality factor value of 1.47 and a barrier height (BH) value of 0.75 eV for the Al/new fuchsin/p-Si contact were determined from the forward bias I-V characteristics. A barrier height value of 0.78 eV was obtained from the capacitance-voltage (C-V) characteristics. It has been seen that the BH value of 0.75 eV obtained for the Al/new fuchsin/p-Si contact is significantly larger than that of conventional Al/p-Si Schottky metal-semiconductor (MS) diodes. Thus, modification of the interfacial potential barrier for Al/p-Si diodes has been achieved using a thin interlayer of the new fuchsin organic semiconductor; this has been ascribed to the fact that the new fuchsin interlayer increases the effective barrier height because of the interface dipole induced by passivation of the organic layer

  6. Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

    Science.gov (United States)

    Garg, Manjari; Naik, Tejas R.; Pathak, C. S.; Nagarajan, S.; Rao, V. Ramgopal; Singh, R.

    2018-04-01

    III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, we have demonstrated the use of a Self-Assembled Monolayer (SAM) of organic molecules to improve the electrical characteristics of Schottky barrier diodes (SBDs) on n-type Gallium Nitride (n-GaN) epitaxial films. The electrical characteristics of diodes were improved by adsorption of SAM of hydroxyl-phenyl metallated porphyrin organic molecules (Zn-TPPOH) onto the surface of n-GaN. SAM-semiconductor bonding via native oxide on the n-GaN surface was confirmed using X-ray photoelectron spectroscopy measurements. Surface morphology and surface electronic properties were characterized using atomic force microscopy and Kelvin probe force microscopy. Current-voltage characteristics of different metal (Cu, Ni) SBDs on bare n-GaN were compared with those of Cu/Zn-TPPOH/n-GaN and Ni/Zn-TPPOH/n-GaN SBDs. It was found that due to the molecular monolayer, the surface potential of n-GaN was decreased by ˜350 mV. This caused an increase in the Schottky barrier height of Cu and Ni SBDs from 1.13 eV to 1.38 eV and 1.07 eV to 1.22 eV, respectively. In addition to this, the reverse bias leakage current was reduced by 3-4 orders of magnitude for both Cu and Ni SBDs. Such a significant improvement in the electrical performance of the diodes can be very useful for better device functioning.

  7. P3HT-graphene bilayer electrode for Schottky junction photodetectors

    Science.gov (United States)

    Aydın, H.; Kalkan, S. B.; Varlikli, C.; Çelebi, C.

    2018-04-01

    We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.

  8. TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

    Science.gov (United States)

    Das, Achintya; Duttagupta, Siddhartha P

    2015-12-01

    There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  9. Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

    Science.gov (United States)

    Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

    2018-01-01

    β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

  10. Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on (\\bar{2}01) β-Ga2O3

    Science.gov (United States)

    Kasu, Makoto; Oshima, Takayoshi; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu

    2017-09-01

    A pixel array of vertical Schottky-barrier diodes (SBDs) was fabricated and measured on the surface of a (\\bar{2}01) β-Ga2O3 single crystal. Subsequently, etch pits and patterns were observed on the same surface. Three types of etch pits were discovered: (1) a line-shaped etch pattern originating from a void and extending toward the [010] direction, (2) an arrow-shaped etch pit whose arrow’s head faces toward the [102] direction and, (3) a gourd-shaped etch pit whose point head faces toward the [102] direction. Their average densities were estimated to be 5 × 102, 7 × 104, and 9 × 104 cm-2, respectively. We confirmed no clear relationship between the leakage current in SBDs and these crystalline defects. Such results are obtained because threading dislocations run mainly in the [010] growth direction and do not go through the (\\bar{2}01) sample plate.

  11. Improvements in DC Current-Ioltage (I-V) Characteristics of n-GaN Schottky Diode using Metal Overlap Edge Termination

    International Nuclear Information System (INIS)

    Munir, T.; Aziz, A. A.; Abdullah, M. J.; Ain, M. F.

    2010-01-01

    Practical design of GaN Schottky diodes incorporating a field plate necessitates an understanding of how the addition of such plate affects the diode performance. In this paper, we investigated the effects on DC current-voltage (I-V) characteristics of n-GaN schottky diode by incorporating metal overlap edge termination. The thickness of the oxide film varies from 0.001 to 1 micron. Two-dimensional Atlas/Blaze simulations revealed that severe electric field crowding across the metal semiconductor contact will cause reliability concern and limit device breakdown voltage. DC current-voltage (I-V) measurements indicate that the forward currents are higher for thinner oxide film schottky diodes with metal overlap edge termination than those of unterminated schottky diodes. The forward current increased due to formation of an accumulation layer underneath the oxide layer. Extending the field plate to beyond periphery regions of schottky contact does not result in any significant increase in forward current. The new techniques of ramp oxide metal overlap edge termination have been implemented to increase the forward current of n-GaN schottky diode. In reverse bias, breakdown voltage increased with edge termination oxide up to a certain limit of oxide thickness.

  12. Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors

    Science.gov (United States)

    Zhang, Jian; Liu, Siyu; Nshimiyimana, Jean Pierre; Deng, Ya; Hu, Xiao; Chi, Xiannian; Wu, Pei; Liu, Jia; Chu, Weiguo; Sun, Lianfeng

    2018-06-01

    A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.

  13. Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

    Science.gov (United States)

    Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

    2018-05-01

    N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

  14. Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors

    Science.gov (United States)

    Chang, Hsun-Ming; Fan, Kai-Lin; Charnas, Adam; Ye, Peide D.; Lin, Yu-Ming; Wu, Chih-I.; Wu, Chao-Hsin

    2018-04-01

    Compared to graphene and MoS2, studies on metal contacts to black phosphorus (BP) transistors are still immature. In this work, we present the experimental analysis of titanium contacts on BP based upon the theory of thermionic emssion. The Schottky barrier height (SBH) is extracted by thermionic emission methods to analyze the properties of Ti-BP contact. To examine the results, the band gap of BP is extracted followed by theoretical band alignment by Schottky-Mott rule. However, an underestimated SBH is found due to the hysteresis in electrical results. Hence, a modified SBH extraction for contact resistance that avoids the effects of hysteresis is proposed and demonstrated, showing a more accurate SBH that agrees well with theoretical value and results of transmission electron microscopy and energy-dispersive x-ray spectroscopy.

  15. Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

    International Nuclear Information System (INIS)

    Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

    2015-01-01

    We demonstrate a vertical field-effect transistor based on a graphene/MoSe 2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe 2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe 2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10 5 . These results point to the potential high performance of the graphene/MoSe 2 vdW heterostructure for electronics applications

  16. Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

    Science.gov (United States)

    Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

    2018-04-01

    We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

  17. A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rybalko, Oleksandr; Zhurbenko, Vitaliy

    2018-01-01

    The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use...... with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model...... is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance...

  18. Study of transport properties of copper/zinc-oxide-nanorods-based Schottky diode fabricated on textile fabric

    International Nuclear Information System (INIS)

    Khan, Azam; Hussain, Mushtaque; Abbasi, Mazhar Ali; Ibupoto, Zafar Hussain; Nur, Omer; Willander, Magnus

    2013-01-01

    In this work, a copper/zinc-oxide (ZnO)-nanorods-based Schottky diode was fabricated on the textile fabric substrate. ZnO nanorods were grown on a silver-coated textile fabric substrate by using the hydrothermal route. Scanning electron microscopy and x-ray diffraction techniques were used for the structural study. The electrical characterization of copper/ZnO-nanorods-based Schottky diodes was investigated by using a semiconductor parameter analyzer and an impedance spectrometer. The current density–voltage (J–V) and capacitance–voltage (C–V) measurements were used to estimate the electrical parameters. The threshold voltage (V th ), ideality factor (η), barrier height (ϕ b ), reverse saturation current density (J s ), carrier concentration (N D ) and built-in potential (V bi ) were determined by using experimental data and (simulated) curve fitting. This study describes the possible fabrication of electronic and optoelectronic devices on textile fabric substrate with an acceptable performance. (paper)

  19. Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

    International Nuclear Information System (INIS)

    Nakamura, W.; Tokuda, Y.; Ueda, H.; Kachi, T.

    2006-01-01

    Inductively coupled plasma-(ICP-)induced defects in n-type GaN have been studied from current-voltage (I-V) characteristics and deep-level transient spectroscopy (DLTS) for Schottky diodes fabricated on etched surfaces. The samples after ICP etching show the ohmic I-V characteristics. Schottky characteristics are obtained after annealing at 600 and 800 deg. C in N 2 , but are not restored to that of the control samples. DLTS shows that the effect of ICP etching is small on the region beyond 80 nm from the surface. These results suggest that there remain ICP-induced damage in the near-surface region after thermal annealing

  20. Characteristics of surface mount low barrier silicon Schottky diodes with boron contamination in the substrate–epitaxial layer interface

    International Nuclear Information System (INIS)

    Pal, Debdas; Hoag, David; Barter, Margaret

    2012-01-01

    Unusual negative resistance characteristics were observed in low barrier HMIC (Heterolithic Microwave Integrated Circuit) silicon Schottky diodes with HF (hydrofluoric acid)/IPA (isopropyl alcohol) vapor clean prior to epitaxial growth of silicon. SIMS (secondary ion mass spectroscopy) analysis and the results of the buried layer structure confirmed boron contamination in the substrate/epitaxial layer interface. Consequently the structure turned into a thyristor like p-n-p-n device. A dramatic reduction of boron contamination was found in the wafers with H 2 0/HCl/HF dry only clean prior to growth, which provided positive resistance characteristics. Consequently the mean differential resistance at 10 mA was reduced to about 8.1 Ω. The lower series resistance (5.6–5.9 Ω) and near 1 ideality factor (1.03–1.06) of the Schottky devices indicated the good quality of the epitaxial layer. (paper)

  1. The on-line beam control and diagnosis system of TARN

    International Nuclear Information System (INIS)

    Takanaka, M.; Watanabe, S.; Chiba, K.; Katayama, T.; Noda, A.

    1982-04-01

    The computer network in TARN is composed of a central main frame computer, two different minicomputers and several microprocessors. It has been used for the beam control and the beam diagnosis; support for adjustment of elements of the transport line and the ring, generation of RF voltage function, measurement of beam profile at RF stacking, on-line measurement of ν:value, and observation of Schottky signal. By the use of this computer system, the operation of TARN has been effectively and steadily performed, and additionally it has contributed to measuring the beam characteristics precisely in the ring. (author)

  2. Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

    Science.gov (United States)

    Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

    2014-01-01

    This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

  3. Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Rao, P. Koteswara; Ramesh, C.K.

    2007-01-01

    Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN (n d = 4.07 x 10 17 cm -3 ) have been investigated using current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75 eV (I-V) and 0.93 eV (C-V), respectively. It is noted that the barrier height increased when the contact was annealed at 300 deg. C and slightly decreased upon annealing at temperatures of 400 deg. C and 500 deg. C. The extracted Schottky barrier heights are 0.99 eV (I-V), 1.34 eV (C-V) for 300 deg. C, 0.88 eV (I-V), 1.20 eV (C-V) for 400 deg. C and 0.72 eV (I-V), 1.08 eV (C-V) for 500 deg. C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures

  4. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  5. Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

    Science.gov (United States)

    Jin, Haoming; Hebard, Arthur

    Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

  6. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  7. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Science.gov (United States)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  8. Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer

    International Nuclear Information System (INIS)

    Güllü, Ö.; Aydoğan, S.; Türüt, A.

    2012-01-01

    In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal–semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current–voltage (I–V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I–V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.

  9. Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

    2014-04-15

    In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

  10. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

    International Nuclear Information System (INIS)

    Wang Yongshun; Rui Li; Adnan Ghaffar; Wang Zaixing; Liu Chunjuan

    2015-01-01

    In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6–11.4 μm and (2.2–2.4) × 10 15 cm −3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C, that is 50 °C higher than that of the traditional one; the reverse voltage capacity V R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μA and the forward conduction voltage drop is V F = 0.71 V at forward current I F = 3 A. (semiconductor devices)

  11. Effect of Barrier Metal Based on Titanium or Molybdenum in Characteristics of 4H-SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    M. Ben Karoui

    2014-05-01

    Full Text Available The electrical properties were extracted by I-V and C-V analysis, performed from 10 K to 450 K. When the annealing temperature varied to 400 °C, the Schottky barrier height (SBH increased from 0.85 Ev to 1.20 eV in Ti/4H-SiC whereas in the Mo/4H-SiC the SBH varied from 1.04 eV to 1.10 eV. Deformation of J-V-T characteristics was observed in two types of devices when the temperature decreases from 300 K to 10 K. The electrical properties and the stability of the devices have been correlated to the fabrication processes and to the metal/semiconductor interfaces. Mo-based contacts show better behaviour in forward polarization when compared to the Ti-based Schottky contacts, with ideality factors close to the unity even after the annealing process. However, Mo-based contacts show leakage currents higher than that measured on the more optimized Ti-based Schottky.

  12. Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

    Science.gov (United States)

    Jin, Fangming; Su, Zisheng; Chu, Bei; Cheng, Pengfei; Wang, Junbo; Zhao, Haifeng; Gao, Yuan; Yan, Xingwu; Li, Wenlian

    2016-05-01

    In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59 mA/cm2, an open-circuit voltage (Voc) of 1.06 V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5 G solar illumination at 100 mW/cm2. Device performance was substantially enhanced by simply inserting thin organic hole transport material into the interface of MoOx and SubPc. The optimized devices realized a 180% increase in PCE of 2.30% and a peak Voc as high as 1.45 V was observed. We found that the improvement is due to the exciton and electron blocking effect of the interlayer and its thickness plays a vital role in balancing charge separation and suppressing quenching effect. Moreover, applying such interface engineering into MoOx/SubPc/C60 based planar heterojunction cells substantially enhanced the PCE of the device by 44%, from 3.48% to 5.03%. Finally, we also investigated the requirements of the interface material for Schottky barrier modification.

  13. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

    International Nuclear Information System (INIS)

    Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi; Fan Zhong-Chao; Yang Fu-Hua

    2013-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm 2 with a total active area of 2.46 × 10 −3 cm 2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10 −5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

    International Nuclear Information System (INIS)

    Chawanda, A.; Coelho, S.M.M.; Auret, F.D.; Mtangi, W.; Nyamhere, C.; Nel, J.M.; Diale, M.

    2012-01-01

    Highlights: ► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I–V, C–V and SEM techniques under various annealing conditions. ► The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ► Thermal stability of these diodes is maintained up to 500 °C anneal. ► SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 °C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C.

  15. Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

    Energy Technology Data Exchange (ETDEWEB)

    Padma, R.; Balaram, N.; Reddy, I. Neelakanta; Reddy, V. Rajagopal, E-mail: reddy_vrg@rediffmail.com

    2016-07-01

    The Au/Fe-doped ZnO/n-InP metal/interlayer/semiconductor (MIS) Schottky structure is fabricated with Fe-doped ZnO nanostructure (NS) as an interlayer. The field emission scanning electron microscopy and atomic force microscopy results demonstrated that the surface morphology of the Fe−ZnO NS on n-InP is fairly smooth. The x-ray diffraction results reveal that the average grain size of the Fe−ZnO film is 12.35 nm. The electrical properties of the Au/n-InP metal-semiconductor (MS) and Au/Fe−ZnO NS/n-InP MIS Schottky structures are investigated by current-voltage and capacitance-voltage measurements at room temperature. The Au/Fe−ZnO NS/n-InP MIS Schottky structure has good rectifying ratio with low-leakage current compared to the Au/n-InP MS structure. The barrier height obtained for the MIS structure is higher than those of MS Schottky structure because of the modification of the effective barrier height by the Fe−ZnO NS interlayer. Further, the barrier height, ideality factor and series resistance are determined for the MS and MIS Schottky structures using Norde and Cheung's functions and compared to each other. The estimated interface state density of MIS Schottky structure is lower than that of MS Schottky structure. Experimental results revealed that the Poole-Frenkel emission is the dominant conduction mechanism in the lower bias region whereas Schottky emission is the dominant in the higher bias region for both the Au/n-InP MS and Au/Fe−ZnO NS/n-InP MIS Schottky structures. - Highlights: • Barrier height of Au/n-InP Schottky diode was modified by Fe−ZnO nanostructure interlayer. • MIS structure has a good rectification ratio compared to the MS structure. • The interface state density of MIS structure is lower than that of MS structure. • Poole-Frenkel mechanism is found to dominate in both MS and MIS structure.

  16. High Line

    DEFF Research Database (Denmark)

    Kiib, Hans

    2015-01-01

    At just over 10 meters above street level, the High Line extends three kilometers through three districts of Southwestern Manhattan in New York. It consists of simple steel construction, and previously served as an elevated rail line connection between Penn Station on 34th Street and the many....... The High Line project has been carried out as part of an open conversion strategy. The result is a remarkable urban architectural project, which works as a catalyst for the urban development of Western Manhattan. The greater project includes the restoration and reuse of many old industrial buildings...

  17. Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

    Directory of Open Access Journals (Sweden)

    Moonsang Lee

    2018-06-01

    Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

  18. Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy.

    Science.gov (United States)

    Dong, Hong; Gong, Cheng; Addou, Rafik; McDonnell, Stephen; Azcatl, Angelica; Qin, Xiaoye; Wang, Weichao; Wang, Weihua; Hinkle, Christopher L; Wallace, Robert M

    2017-11-08

    MoS 2 , as a model transition metal dichalcogenide, is viewed as a potential channel material in future nanoelectronic and optoelectronic devices. Minimizing the contact resistance of the metal/MoS 2 junction is critical to realizing the potential of MoS 2 -based devices. In this work, the Schottky barrier height (SBH) and the band structure of high work function Pd metal on MoS 2 have been studied by in situ X-ray photoelectron spectroscopy (XPS). The analytical spot diameter of the XPS spectrometer is about 400 μm, and the XPS signal is proportional to the detection area, so the influence of defect-mediated parallel conduction paths on the SBH does not affect the measurement. The charge redistribution by Pd on MoS 2 is detected by XPS characterization, which gives insight into metal contact physics to MoS 2 and suggests that interface engineering is necessary to lower the contact resistance for the future generation electronic applications.

  19. Tuning the Schottky Barrier at the Graphene/MoS2 Interface by Electron Doping

    DEFF Research Database (Denmark)

    Jin, Chengjun; Rasmussen, Filip Anselm; Thygesen, Kristian Sommer

    2015-01-01

    ) with a generalized gradient approximation predicts a Schottky barrier height of 0.18 eV, whereas the G0W0 method increases this value to 0.60 eV. While the DFT band gap of MoS2 does not change when the heterostructure is formed, the G0W0 gap is reduced by 0.30 eV as a result of the enhanced screening by the graphene...... layer. In contrast to the case of metal substrates, where the band alignment is governed by Pauli repulsion-induced interface dipoles, the graphene/MoS2 heterostructure shows only a negligible interface dipole. As a consequence, the band alignment at the neutral heterostructure is not changed when...... the two layers are brought into contact. We systematically follow the band alignment as a function of doping concentration and find that the Fermi level of the graphene crosses the MoS2 conduction band at a doping concentration of around 1012 cm–2. The variation of the energy levels with doping...

  20. Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

    KAUST Repository

    Guan, Xinwei

    2017-11-23

    Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high-quality capacitor structure made of an MAPbBr3 (CH3NH3PbBr3) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 103, endurance over 103 cycles, and a retention time of 104 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament-type switching behavior. This work elucidates the important role of processing-dependent defects in the charge transport of hybrid perovskites and provides insights on the ion-redistribution-based RS in perovskite memory devices.

  1. Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides

    Science.gov (United States)

    Lu, Haichang; Guo, Yuzheng; Robertson, John

    2016-08-01

    The Schottky Barrier Heights (SBH) of metal layers on top of monolayer hexagonal X-nitrides (X = B, Al, Ga, and h-XN) are calculated using supercells and density functional theory so as to understand the chemical trends of contact formation on graphene and the 2D layered semiconductors such as the transition metal dichalcogenides. The Fermi level pinning factor S of SBHs on h-BN is calculated to be nearly 1, indicating no pinning. For h-AlN and h-GaN, the calculated pinning factor is about 0.63, less than for h-BN. We attribute this to the formation of stronger, chemisorptive bonds between the nitrides and the contact metal layer. Generally, the h-BN layer remains in a planar sp2 geometry and has weak physisorptive bonds to the metals, whereas h-AlN and h-GaN buckle out of their planar geometry which enables them to form the chemisorptive bonds to the metals.

  2. The interface modification for GNWs/Si Schottky junction with PEI/PEIE interlayers

    Science.gov (United States)

    Zhou, Quan; Liu, Xiangzhi; Luo, Wei; Shen, Jun; Wang, Yuefeng; Wei, Dapeng

    2018-03-01

    Polyethylenimine ethoxylated (PEIE) and polyethyl-enimine (PEI), the two kinds of interface buffer layer, are widely used in the organic light-emitting diodes and solar cells for band alignment adjustment. In this report, we carefully studied the influence of the inserting organic layer on the graphene nanowalls(GNWS)/Si junction quality and the photoresponse of the Schottky devices. We found that thinner layers of PEI could decrease the dark current and improve the photo-to-dark ratio to 105 for n-Si devices. The s-kink effect and degradation of open circuit voltage could be observed for thicker thickness and excessive doping. Relatively, PEIE with stable thin layer not only improve the rectifying characteristics of p-Si devices but also the incident photon conversion efficiency. The maximus IPCE could reach 44% and be adjusted to zero by the reverse bias. The tunneling inhibition for electrons can be alleviated by increasing the barrier height. Our results provide an attractive method to improve the efficiency of pristine GNWs/Si junction with interface doping and passivation.

  3. Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

    Science.gov (United States)

    Vigneshwara Raja, P.; Narasimha Murty, N. V. L.

    2018-04-01

    Deep level defects in 4H-SiC Schottky barrier diodes (SBDs) fabricated on n-type epitaxial 4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy prior to and after 60Co-gamma irradiation. The TSCAP measurements on the non-irradiated SBDs reveal two electron traps at Ec-0.63 eV (˜250 K) and Ec-1.13 eV (˜525 K), whereas only one trap at Ec-0.63 eV is identified by conventional thermally stimulated current (TSC) measurements. Hence, TSCAP spectroscopy is more effective in identifying deep level defects in epitaxial 4 H-SiC SBDs as compared to the TSC spectroscopy. Upon exposure to 60Co-gamma rays up to a dose of 100 Mrad, significant changes in the concentration of the traps at Ec-0.63 eV, Ec-1.13 eV, and one new trap at Ec-0.89 eV (˜420 K) are observed. The electrical characteristics of the SBDs are considerably changed after gamma irradiation. The dominant mechanisms responsible for the irradiation induced changes in the SBD electrical characteristics are analyzed by incorporating the trap signatures in the commercial Silvaco® TCAD device simulator. The extracted trap parameters of the irradiated SBDs may be helpful in predicting the survival of 4H-SiC SBD detectors at higher irradiation levels.

  4. 4H-SiC Schottky diode arrays for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Chan, H.K. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Gohil, T. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Vassilevski, K.V.; Wright, N.G.; Horsfall, A.B. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Barnett, A.M. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom)

    2016-12-21

    Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20°C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2×2 or 1×3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm{sup 2} at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 to 1.68 keV among different diodes.

  5. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    Energy Technology Data Exchange (ETDEWEB)

    Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow 119991 (Russian Federation); Senkov, V. M. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Avenue, Moscow 119991 (Russian Federation); Nalivaiko, O. Y. [JSC “Integral” – “Integral” Holding Management Company, 121A, Kazintsa I. P. Street, Minsk 220108 (Belarus); Novikau, A. G.; Gaiduk, P. I. [Belarusian State University, 4 Nezavisimosti Avenue, 220030 Minsk (Belarus)

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

  6. Gold nanoparticles deposited on linker-free silicon substrate and embedded in aluminum Schottky contact.

    Science.gov (United States)

    Gorji, Mohammad Saleh; Razak, Khairunisak Abdul; Cheong, Kuan Yew

    2013-10-15

    Given the enormous importance of Au nanoparticles (NPs) deposition on Si substrates as the precursor for various applications, we present an alternative approach to deposit Au NPs on linker-free n- and p-type Si substrates. It is demonstrated that, all conditions being similar, there is a significant difference between densities of the deposited NPs on both substrates. The Zeta-potential and polarity of charges surrounding the hydroxylamine reduced seeded growth Au NPs, are determined by a Zetasizer. To investigate the surface properties of Si substrates, contact angle measurement is performed. Field-emission scanning electron microscope is then utilized to distinguish the NPs density on the substrates. Finally, Al/Si Schottky barrier diodes with embedded Au NPs are fabricated, and their structural and electrical characteristics are further evaluated using an energy-filtered transmission electron microscope and current-voltage measurements, respectively. The results reveal that the density of NPs is significantly higher on n-type Si substrate and consequently has more pronounced effects on the electrical characteristics of the diode. It is concluded that protonation of Si-OH group on Si surface in low pH is responsible for the immobilization of Au NPs, which eventually contributes to the lowering of barrier height and enhances the electrical characteristics. Copyright © 2013 Elsevier Inc. All rights reserved.

  7. Optics and design of the fringe field monochromator for a Schottky field emission gun

    International Nuclear Information System (INIS)

    Mook, H.W.; Kruit, P.

    1999-01-01

    For the improvement of high-resolution electron energy loss spectroscopy a new electron source monochromator, based on the Wien filter principle, is presented. In the fringe field monochromator the electric and magnetic filter fields are tightly enclosed by field clamps to satisfy the Wien condition, E=vB. The whole monochromator including the 150 nm energy selection slits (Nanoslits) is positioned in the gun area. Its total length is only 42 mm. Using electron trajectory simulation through the filter fields the dispersion and aberrations are determined. The parasitic astigmatism of the gun lens needs to be corrected using an electrostatic quadrupole field incorporated in the filter. Estimations of the influence of filter electrode misalignment show that at least six filter electrodes must be used to loosen the alignment demands sufficiently. Using theoretical estimations of the Coulomb interaction the final energy resolution, beam brightness and current are predicted. For a Schottky field emission electron gun with typical brightness of 10 8 A/sr m 2 V the monochromator is expected to produce a 50 meV 1 nA beam with a brightness of 10 7

  8. Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes.

    Science.gov (United States)

    Lee, Jae Hyung; Lee, Won Woo; Yang, Dong Won; Chang, Won Jun; Kwon, Sun Sang; Park, Won Il

    2018-04-25

    Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film.

  9. Planar InP-based Schottky barrier diodes for terahertz applications

    International Nuclear Information System (INIS)

    Zhou Jingtao; Yang Chengyue; Ge Ji; Jin Zhi

    2013-01-01

    Based on characteristics such as low barrier and high electron mobility of lattice matched In 0.53 Ga 0.47 As layer, InP-based Schottky barrier diodes (SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32 Ω; and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss, are promising for applications in the terahertz mixer, multiplier and detector circuits. (semiconductor devices)

  10. Time resolution improvement of Schottky CdTe PET detectors using digital signal processing

    International Nuclear Information System (INIS)

    Nakhostin, M.; Ishii, K.; Kikuchi, Y.; Matsuyama, S.; Yamazaki, H.; Torshabi, A. Esmaili

    2009-01-01

    We present the results of our study on the timing performance of Schottky CdTe PET detectors using the technique of digital signal processing. The coincidence signals between a CdTe detector (15x15x1 mm 3 ) and a fast liquid scintillator detector were digitized by a fast digital oscilloscope and analyzed. In the analysis, digital versions of the elements of timing circuits, including pulse shaper and time discriminator, were created and a digital implementation of the Amplitude and Rise-time Compensation (ARC) mode of timing was performed. Owing to a very fine adjustment of the parameters of timing measurement, a good time resolution of less than 9.9 ns (FWHM) at an energy threshold of 150 keV was achieved. In the next step, a new method of time pickoff for improvement of timing resolution without loss in the detection efficiency of CdTe detectors was examined. In the method, signals from a CdTe detector are grouped by their rise-times and different procedures of time pickoff are applied to the signals of each group. Then, the time pickoffs are synchronized by compensating the fixed time offset, caused by the different time pickoff procedures. This method leads to an improved time resolution of ∼7.2 ns (FWHM) at an energy threshold of as low as 150 keV. The methods presented in this work are computationally fast enough to be used for online processing of data in an actual PET system.

  11. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

    Science.gov (United States)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-03

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  12. Synthesis of Peripherally Tetrasubstituted Phthalocyanines and Their Applications in Schottky Barrier Diodes

    Directory of Open Access Journals (Sweden)

    Semih Gorduk

    2017-01-01

    Full Text Available New metal-free and metallophthalocyanine compounds (Zn, Co, Ni, and Cu were synthesized using 2-hydroxymethyl-1,4-benzodioxan and 4-nitrophthalonitrile compounds. All newly synthesized compounds were characterized by elemental analysis, FT-IR, UV-Vis, 1H-NMR, MALDI-TOF MS, and GC-MS techniques. The applications of synthesized compounds in Schottky barrier diodes were investigated. Ag/Pc/p–Si structures were fabricated and charge transport mechanism in these devices was investigated using dc technique. It was observed from the analysis of the experimental results that the charge transport can be described by Ohmic conduction at low values of the reverse bias. On the other hand, the voltage dependence of the measured current for high values of the applied reverse bias indicated that space charge limited conduction is the dominant mechanism responsible for dc conduction. From the observed voltage dependence of the current density under forward bias conditions, it has been concluded that the charge transport is dominated by Poole-Frenkel emission.

  13. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

    2004-01-01

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  14. Junction barrier Schottky rectifier with an improved P-well region

    International Nuclear Information System (INIS)

    Wang Ying; Li Ting; Cao Fei; Shao Lei; Chen Yu-Xian

    2012-01-01

    A junction barrier Schottky (JBS) rectifier with an improved P-well on 4H—SiC is proposed to improve the V F —I R trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10 −8 times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P + grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit (FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge (ESD) in the human body model (HBM) circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier. (interdisciplinary physics and related areas of science and technology)

  15. Effect of defects on electrical properties of 4H-SiC Schottky diodes

    International Nuclear Information System (INIS)

    Ben Karoui, M.; Gharbi, R.; Alzaied, N.; Fathallah, M.; Tresso, E.; Scaltrito, L.; Ferrero, S.

    2008-01-01

    Most of power electronic circuits use power semiconductor switching devices which ideally present infinite resistance when off, zero resistance when on, and switch instantaneously between those two states. Switches and rectifiers are key components in power electronic systems, which cover a wide range of applications, from power transmission to control electronics and power supplies. Typical power switching devices such as diodes, thyristors, and transistors are based on a monocrystalline silicon semiconductor or silicon carbide. Silicon is less expensive, more widely used, and a more versatile processing material than silicon carbide. The silicon carbide (SiC) has properties that allow devices with high power voltage rating and high operating temperatures. The technology overcomes some crystal growth obstacles, by using the hydrogen in the fabrication of 4H-SiC wafers. The presence of structural defects on 4H-SiC wafers was shown by different techniques such as optical microscopy and scanning electron microscopy. The presence of different SiC polytypes inclusions was found by Raman spectroscopy. Schottky diodes were realized on investigated wafers in order to obtain information about the correlation between those defects and electrical properties of the devices. The diodes with voltage breakdown as 600 V and ideality factor as 1.05 were obtained and characterized after packaging

  16. Self-assembled H-aggregation induced high performance poly (3-hexylthiophene) Schottky diode

    Science.gov (United States)

    Chaudhary, Vivek; Pandey, Rajiv K.; Prakash, Rajiv; Singh, Arun Kumar

    2017-12-01

    The investigation of size confinement and chain orientation within the microstructure of a polymer thin film is very important for electronic device applications and fundamental research. Here, we present single step methodology for the synthesis of solution-processable poly (3-hexylthiophene) (P3HT) nanofibers via a self-assembly process. The formation of P3HT nanofibers is confirmed by atomic force microscopy. The synthesized nanofibers are characterized by UV-visible absorption, photoluminescence, and Raman spectroscopy. The aggregation type of self-assembled P3HT is studied by both UV-visible absorbance and photoluminescence spectroscopy. The exciton bandwidth in polymer films is calculated by following the Spano's H-aggregate model and found to be 28 meV. Raman spectroscopy is used to identify the various stretching modes present in nanofibers. The structural investigation using grazing angle X-ray diffraction of nanofibers reveals the presence of alkyl chain ordering. We have fabricated organic Schottky diodes with P3HT nanofibers on indium tin oxide (ITO) coated glass with configuration Al/P3HT/ITO, and current density-voltage characteristics are subsequently used for extracting the electronic parameters of the device. We have also discussed the charge transport mechanism at the metal/polymer interface.

  17. Measuring the Electronic Properties of DNA-Specific Schottky Diodes Towards Detecting and Identifying Basidiomycetes DNA

    Science.gov (United States)

    Periasamy, Vengadesh; Rizan, Nastaran; Al-Ta’ii, Hassan Maktuff Jaber; Tan, Yee Shin; Tajuddin, Hairul Annuar; Iwamoto, Mitsumasa

    2016-01-01

    The discovery of semiconducting behavior of deoxyribonucleic acid (DNA) has resulted in a large number of literatures in the study of DNA electronics. Sequence-specific electronic response provides a platform towards understanding charge transfer mechanism and therefore the electronic properties of DNA. It is possible to utilize these characteristic properties to identify/detect DNA. In this current work, we demonstrate a novel method of DNA-based identification of basidiomycetes using current-voltage (I-V) profiles obtained from DNA-specific Schottky barrier diodes. Electronic properties such as ideality factor, barrier height, shunt resistance, series resistance, turn-on voltage, knee-voltage, breakdown voltage and breakdown current were calculated and used to quantify the identification process as compared to morphological and molecular characterization techniques. The use of these techniques is necessary in order to study biodiversity, but sometimes it can be misleading and unreliable and is not sufficiently useful for the identification of fungi genera. Many of these methods have failed when it comes to identification of closely related species of certain genus like Pleurotus. Our electronics profiles, both in the negative and positive bias regions were however found to be highly characteristic according to the base-pair sequences. We believe that this simple, low-cost and practical method could be useful towards identifying and detecting DNA in biotechnology and pathology. PMID:27435636

  18. Tunneling Characteristics Depending on Schottky Barriers and Diffusion Current in SiOC.

    Science.gov (United States)

    Oh, Teresa; Kim, Chy Hyung

    2016-02-01

    To obtain a diffusion current in SiOC, the aluminum doped zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering. All the X-ray patterns of the SiOC films showed amorphous phases. The level of binding energy of Si atoms will lead to an additional potential modulation by long range Coulombic and covalent interactions with oxygen ions. The growth of the AZO film was affected by the characteristics of SiOC, resulting in similar trends in XPS spectra and a shift to higher AZO lattice d values than the original AZO d values in XRD analyses. The charges trapped by the defects at the interlayer between AZO and SiOC films induced the decreased mobility of carriers. In the absence of trap charges, AZO grown on SiOC film such as the sample prepared at O2 = 25 or 30 sccm, which has low charge carrier concentration and high mobility, showed high mobility in an ambipolar characteristic of oxide semiconductor due to the tunneling effect and diffusion current. The structural matching of an interface between AZO and amorphous SiOC enhanced the height of Schottky Barrier (SB), and then the mobility was increased by the tunneling effect from band to band through the high SB.

  19. Charge conduction process and photovoltaic effects in thiazole yellow (TY) thin film based Schottky devices

    Energy Technology Data Exchange (ETDEWEB)

    Roy, M.S. [Defence Lab., Jodhpur (India). Camouflage Div.; Sharma, G.D.; Gupta, S.K. [Department of Physics, J.N.V. University, Jodhpur (Raj.) (India)

    1997-11-21

    The charge generation and photovoltaic effects observed with thin films of TY in the form of sandwich structures, were analysed by J-V, C-V and photoaction spectra. These measurements were explained in terms of n-type semiconductivity of TY thin film and by the formation of a Schottky barrier with ITO while Ohmic contact with an Al or In electrode. The existence of thermionic emission over the ITO-TY barrier has been observed in low voltage region, whereas at high voltages, the process is dominant by the series resistance of TY layer. Various electrical parameters were calculated from the analysis of J-V and C-V characteristics of the devices and discussed in details. The diode quality factor is higher for Al/TY/ITO than In/TY/ITO device which can be attributed to the formation of thin layer of Al{sub 2}O{sub 3} between Al and TY. The photoaction spectra of the devices reveal that the fraction of light which is absorbed near the ITO-TY interface, to the depth of 180 A, is responsible for producing the charge carriers. The photovoltaic parameters were also calculated from the J-V characteristics of the devices, under illumination and described in detail. (orig.) 21 refs.

  20. Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability

    Science.gov (United States)

    Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2017-11-01

    An explicit surface potential and subthreshold current model for novel Dual Metal Gate (DMG) Asymmetric Vacuum (AV) as gate dielectric Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with the incorporation of localized charges (Nf) is developed to provide excellent immunity against threshold voltage (Vth) degradation due to hot carriers. Hot carrier induced Localized Charges (LC) either positive or negative leads to degrade the threshold of the device. The major advantage of the proposed DMG-AV-SB-CGAA MOSFET is that it mitigates the ambipolar behavior thus offering very good on current to off current ratio; and also reduces the electron temperature which leads to less hot carrier generation thus lesser degradation in Vth and improved Hot Carrier reliability. The surface potential is determined for three different regions by solving 1-D Poisson's and 2-D Laplace equation through separation of variable method to facilitate an optimal model for calculating the subthreshold drain current from Si-SiO2 interface boundary. The developed model results are in good agreement with that of ATLAS-TCAD simulation.