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Sample records for scandium silicides

  1. High temperature structural silicides

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.

    1997-03-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

  2. Scandium recovery from slags after oxidized nickel ore processing

    Science.gov (United States)

    Smyshlyaev, Denis; Botalov, Maxim; Bunkov, Grigory; Rychkov, Vladimir; Kirillov, Evgeny; Kirillov, Sergey; Semenishchev, Vladimir

    2017-09-01

    One of the possible sources of scandium production - waste (slags) from processing of oxidized nickel ores, has been considered in present research work. The hydrometallurgical method has been selected as the primary for scandium extraction. Different reagents for leaching of scandium, such as sulfuric acid, various carbonate salts and fluorides, have been tested. Sulfuric acid has been recognized as an optimal leaching reagent. Sulfuric acid concentration of 100 g L-1 allowed recovering up to 97 % of scandium.

  3. Silicides: Materials for thermoelectric energy conversion

    Science.gov (United States)

    Fedorov, Mikhail I.; Isachenko, Grigory N.

    2015-07-01

    There are few silicides that could be used for thermoelectric energy conversion, following higher silicides of transition metals: CrSi2, MnSi1.75, β-FeSi2, Ru2Si3, ReSi1.75, and solid solutions based on compounds of Mg2X (X = Si, Ge, and Sn). Some of them have very high figures of merit (ZT). It can be shown that, in some silicides, a high ZT is the result of energy spectrum optimization besides the decrease in thermal conductivity. This is very difficult to achieve in some materials, because the density of states is typically dependent only on the band structure of a material, for which there is no means to produce such a change. However, in solid solutions, if they have a special band structure of components, it is possible to alter the band structure to increase ZT.

  4. Synthesis and design of silicide intermetallic materials

    Energy Technology Data Exchange (ETDEWEB)

    Petrovic, J.J.; Castro, R.G.; Butt, D.P. [Los Alamos National Lab., NM (United States)] [and others

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  5. Thermoelectric Properties of Semiconducting Silicide Nanowires

    Science.gov (United States)

    Jin, Song; Sczech, Jeannine; Higgins, Jeremy; Zhou, Feng; Shi, Li

    2008-03-01

    Semiconducting silicides are promising thermoelectric materials. In addition to their respectable thermoelectric figure-of-merit (ZT up to 0.8), silicides have the advantages of low cost, excellent thermal stability and mechanical strength, and outstanding oxidation resistance, making them suitable for high temperature applications. We have developed general synthetic approaches to single crystal nanowires of silicides to investigate the enhancement of thermoelectric properties due to the reduced nanoscale dimension and to explore their applications in thermoelectrics. We will discuss the synthesis and structural characterization of nanowires of chromium disilicide (CrSi2) prepared via a chemical vapor transport (CVT) method and chemical vapor deposition (CVD) of organometallic precursors to synthesize the Novontony Chimney ladder phase MnSi1.75. The Seebeck coefficient, electrical conductivity, and thermal conductivity of individual CrSi2 nanowires were characterized using a suspended microdevice and correlated with the structural information obtained by microscopy on the same nanowires. This combined Seebeck coefficient and electrical conductivity measurements also provide an effective approach to probing the Fermi level, carrier concentration and mobility in nanowires. We will also discuss our progress in using individual nanostructures combined well-defined structural characterization to conclusively investigate the complex thermoelectric behaviors of silicide materials.

  6. Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akiyama, Morito; Nagase, Toshimi [Measurement Solution Research Center, National Institute of Advanced Industrials Science and Technology, Tosu, Saga 841-0052 (Japan); Umeda, Keiichi; Honda, Atsushi [Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555 (Japan)

    2013-01-14

    The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc{sub 0.41}Al{sub 0.59}N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc{sub 0.41}Al{sub 0.59}N film is higher than those of lead zirconate titanate and Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc{sub 0.41}Al{sub 0.59}N film is due to the high d{sub 31} and the low relative permittivity.

  7. Fusion silicide coatings for tantalum alloys.

    Science.gov (United States)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  8. Lifetime measurements and oscillator strengths in singly ionized scandium and the solar abundance of scandium

    Science.gov (United States)

    Pehlivan Rhodin, A.; Belmonte, M. T.; Engström, L.; Lundberg, H.; Nilsson, H.; Hartman, H.; Pickering, J. C.; Clear, C.; Quinet, P.; Fivet, V.; Palmeri, P.

    2017-12-01

    The lifetimes of 17 even-parity levels (3d5s, 3d4d, 3d6s and 4p2) in the region 57 743-77 837 cm-1 of singly ionized scandium (Sc II) were measured by two-step time-resolved laser induced fluorescence spectroscopy. Oscillator strengths of 57 lines from these highly excited upper levels were derived using a hollow cathode discharge lamp and a Fourier transform spectrometer. In addition, Hartree-Fock calculations where both the main relativistic and core-polarization effects were taken into account were carried out for both low- and high-excitation levels. There is a good agreement for most of the lines between our calculated branching fractions and the measurements of Lawler & Dakin in the region 9000-45 000 cm-1 for low excitation levels and with our measurements for high excitation levels in the region 23 500-63 100 cm-1. This, in turn, allowed us to combine the calculated branching fractions with the available experimental lifetimes to determine semi-empirical oscillator strengths for a set of 380 E1 transitions in Sc II. These oscillator strengths include the weak lines that were used previously to derive the solar abundance of scandium. The solar abundance of scandium is now estimated to logε⊙ = 3.04 ± 0.13 using these semi-empirical oscillator strengths to shift the values determined by Scott et al. The new estimated abundance value is in agreement with the meteoritic value (logεmet = 3.05 ± 0.02) of Lodders, Palme & Gail.

  9. Smelting of Scandium by Microwave Irradiation.

    Science.gov (United States)

    Fujii, Satoshi; Tsubaki, Shuntaro; Inazu, Naomi; Suzuki, Eiichi; Wada, Yuji

    2017-09-27

    Scandium is being explored as an alloying element for aluminum alloys, which are gaining importance as high-performance lightweight structural alloys in the transportation industry. A few years ago, Sc was also found to be suitable for use in electrical devices. High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. The piezoelectric response of ScAlN suggests that ScAlN thin films formed on a hard substrate would be suitable surface acoustic wave wideband filters for next-generation wireless communication systems. However, it is often difficult to use ScAlN thin films in MEMS devices-including acoustic ones-because of the extremely high price of metallic Sc, given the difficulty associated with smelting it. Here, we propose a novel process for smelting Sc metal by microwave irradiation. Sc metal was able to be obtained successfully from ScF₃ through a microwave-irradiation-based carbon reduction reaction. The reaction temperature for this reduction process was approximately 880°C, which is half of that for the conventional smelting process involving reduction with Ca. Thus, the proposed microwave irradiation process has significant potential for use in the smelting of Sc metal.

  10. Smelting of Scandium by Microwave Irradiation

    Directory of Open Access Journals (Sweden)

    Satoshi Fujii

    2017-09-01

    Full Text Available Scandium is being explored as an alloying element for aluminum alloys, which are gaining importance as high-performance lightweight structural alloys in the transportation industry. A few years ago, Sc was also found to be suitable for use in electrical devices. High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. The piezoelectric response of ScAlN suggests that ScAlN thin films formed on a hard substrate would be suitable surface acoustic wave wideband filters for next-generation wireless communication systems. However, it is often difficult to use ScAlN thin films in MEMS devices—including acoustic ones—because of the extremely high price of metallic Sc, given the difficulty associated with smelting it. Here, we propose a novel process for smelting Sc metal by microwave irradiation. Sc metal was able to be obtained successfully from ScF3 through a microwave-irradiation-based carbon reduction reaction. The reaction temperature for this reduction process was approximately 880°C, which is half of that for the conventional smelting process involving reduction with Ca. Thus, the proposed microwave irradiation process has significant potential for use in the smelting of Sc metal.

  11. The platinum-rich scandium silicide Sc{sub 2}Pt{sub 9}Si{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Vosswinkel, Daniel; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2017-10-01

    Single crystals of Sc{sub 2}Pt{sub 9}Si{sub 3} have been obtained from an arc-melted and inductively annealed sample of the starting composition Sc:4Pt:2Si. The Sc{sub 2}Pt{sub 9}Si{sub 3} structure (Tb{sub 2}Pt{sub 9}Ge{sub 3} type, space group C2/c) was refined from single crystal X-ray diffractometer data: a=1303.4(1), b=749.9(1), c=973.5(1), β=116.44(1) {sup circle}, wR2=0.0731, 1643 F{sup 2} values and 67 variables. The structure contains three basic coordination polyhedra Sc rate at Pt{sub 11}, Si1 rate at Pt{sub 8} and Si2 rate at Pt{sub 8} which show a simple condensation pattern avoiding direct Sc-Si and Si-Si bonding.

  12. Hydrometallurgical methods of recovery of scandium from the wastes of various technologies

    Science.gov (United States)

    Molchanova, T. V.; Akimova, I. D.; Smirnov, K. M.; Krylova, O. K.; Zharova, E. V.

    2017-03-01

    The recovery of scandium from the wastes of the production of uranium, titanium, iron-vanadium, and alumina is studied. The applied acid schemes of scandium transfer to a solution followed by ion-exchange recovery and extraction concentration of scandium ensure the precipitation of crude scandium oxides containing up to 5% Sc2O3. Scandium oxides of 99.96-99.99% purity are formed after additional refining of these crude oxides according to an extraction technology using a mixture 15% multiradical phosphine oxide or Cyanex-925 + 15% tributyl phosphate in kerosene.

  13. Synthesis and Reactivity of a Scandium Terminal Hydride: H2  Activation by a Scandium Terminal Imido Complex.

    Science.gov (United States)

    Han, Xianghao; Xiang, Li; Lamsfus, Carlos A; Mao, Weiqing; Lu, Erli; Maron, Laurent; Leng, Xuebing; Chen, Yaofeng

    2017-10-20

    Dihydrogen is easily activated by a scandium terminal imido complex containing the weakly coordinated THF. The reaction proceeds through a 1,2-addition mechanism, which is distinct from the σ-bond metathesis mechanism reported to date for rare-earth metal-mediated H2 activation. This reaction yields a scandium terminal hydride, which is structurally well-characterized, being the first one to date. The reactivity of this hydride is reported with unsaturated substrates, further shedding light on the existence of the terminal hydride complex. Interestingly, the H2 activation can be reversible. DFT investigations further eludciate the mechanistic aspects of the reactivity of the scandium anilido-terminal hydride complex with PhNCS but also on the reversible H2 activation process. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires

    OpenAIRE

    Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

    2017-01-01

    Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the re...

  15. Thermoelectric material comprising scandium doped zinc cadmium oxide

    DEFF Research Database (Denmark)

    2016-01-01

    There is presented a composition of scandium doped Zinc Cadmium Oxide with the general formula ZnzCdxScyO which the inventors have prepared, and for which material the inventors have made the insight that it is particularly advantageous as an n-type oxide material, such as particularly advantageous...

  16. Scandium/carbon filters for soft x rays

    NARCIS (Netherlands)

    Artioukov, IA; Kasyanov, YS; Kopylets, IA; Pershin, YP; Romanova, SA

    2003-01-01

    This Note deals with thin-film soft x-ray filters for operation at the wavelengths near carbon K edge (similar to4.5 nm). The filters were fabricated by magnetron sputtering deposition of thin layers of scandium (total thickness 0.1-0.2 mum) onto films of polypropylene (thickness 1.5 mum) and

  17. Thermoelectric properties of group VI metal silicide semiconductors

    Science.gov (United States)

    Nonomura, T.; Wen, C.; Kato, A.; Isobe, K.; Kubota, Y.; Nakamura, T.; Yamashita, M.; Hayakawa, Y.; Tatsuoka, H.

    The electrical and thermoelectric properties of group VI metal silicides, such as the Mo- and W-silicides as well as CrSi2, were investigated. The electronic band structures of the hexagonal- MoSi2, - WSi2 and CrSi2, were calculated using the first-principles total-energy calculation program in pseudopotential schemes with plane-wave basis functions, and their Seebeck coefficients were also calculated. In addition, the Mo- and W-silicides were synthesized using mechanical alloying followed by a spark plasma sintering technique, and their structural, electric and thermoelectric properties were examined.

  18. 45Sc Solid State NMR studies of the silicides Sc TSi ( T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

    Science.gov (United States)

    Harmening, Thomas; Eckert, Hellmut; Fehse, Constanze M.; Sebastian, C. Peter; Pöttgen, Rainer

    2011-12-01

    The silicides Sc TSi ( T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the 45Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. 45Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO 3) 3 solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The 45Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code.

  19. Solvent extraction of scandium from lateritic nickel- cobalt ores using different organic reagents

    OpenAIRE

    Ferizoğlu Ece; Kaya Şerif; Topkaya Yavuz A.

    2016-01-01

    Scandium is the most important and strategic metal that can be recovered as a by-product from lateritic nickel-cobalt ores. In this research, different extractants were investigated in order to extract scandium from a sulfate medium by a using a solvent extraction method. Generally, the organic extractants are classified as acidic, neutral and basic organophosphorus compounds. However, in solvent extraction of scandium, the acidic and neutral organophosphorus compounds are preferred due to th...

  20. BASIC RESEARCH ON THE SEPARATION OF SCANDIUM YTTRIUM, AND THE RARE EARTHS BY SOLVENT EXTRACTION.

    Science.gov (United States)

    RARE EARTH ELEMENTS, * SOLVENT EXTRACTION ), (*CHELATE COMPOUNDS, RARE EARTH ELEMENTS), PURIFICATION, ATOMIC SPECTROSCOPY, SCANDIUM, YTTRIUM, PRASEODYMIUM, SAMARIUM, EUROPIUM, GADOLINIUM, TERBIUM, FLUORINE COMPOUNDS, KETONES

  1. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  2. Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

    NARCIS (Netherlands)

    Stavitski, N.; van Dal, Mark J.H.; Lauwers, Anne; Vrancken, Christa; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2008-01-01

    In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels

  3. Anomalous frequency dependent diamagnetism in metal silicide

    Science.gov (United States)

    Dahal, Ashutosh; Gunasekera, Jagat; Harriger, Leland; Singh, David J.; Singh, Deepak K.; Leland Harriger Collaboration

    Discovery of superconductivity in PbO-type FeSe has generated a lot of interest. Among the samples we synthesize with similar structure, NiSi has showed anomalous but very interesting results. Nickel silicides are important electronic materials that have been used as contacts for field effect transistors, as interconnects and in nanoelectronic devices. The magnetic properties of NiSi are not well known, however. In this presentation, we report a highly unusual magnetic phenomenon in NiSi. The ac susceptibility measurements on NiSi reveal strong frequency dependence of static and dynamic susceptibilities that are primarily diamagnetic at room temperature. The static susceptibility is found to exhibit a strong frequency dependence of the diamagnetic response below 100K, while dynamic susceptibility showed peak type feature at 10KHz frequency around 50K. Detailed neutron scattering measurements on high quality powder sample of NiSi on SPINS cold spectrometer further revealed an inelastic peak around 1.5meV, even though no magnetic order is detected. The inelastic peak dissipates above 100K, which is where the static susceptibility starts to diverge with frequency. Research is supported by U.S. Department of Energy, Office of Basic Energy Sciences under Grant No. DE-SC0014461.

  4. Submicron Features in Higher Manganese Silicide

    Directory of Open Access Journals (Sweden)

    Yatir Sadia

    2013-01-01

    Full Text Available The world energy crisis had increased the demand for alternative energy sources and as such is one of the topics at the forefront of research. One way for reducing energy consumption is by thermoelectricity. Thermoelectric effects enable direct conversion of thermal into electrical energy. Higher manganese silicide (HMS, MnSi1.75 is one of the promising materials for applications in the field of thermoelectricity. The abundance and low cost of the elements, combined with good thermoelectric properties and high mechanical and chemical stability at high temperatures, make it very attractive for thermoelectric applications. Recent studies have shown that Si-rich HMS has improved thermoelectric properties. The most interesting of which is the unusual reduction in thermal conductivity. In the current research, transmission (TEM and scanning (SEM electron microscopy as well as X-ray diffraction methods were applied for investigation of the govern mechanisms resulting in very low thermal conductivity values of an Si-rich HMS composition, following arc melting and hot-pressing procedures. In this paper, it is shown that there is a presence of sub-micron dislocations walls, stacking faults, and silicon and HMS precipitates inside each other apparent in the matrix, following a high temperature (0.9 Tm hot pressing for an hour. These are not just responsible for the low thermal conductivity values observed but also indicate the ability to create complicate nano-structures that will last during the production process and possibly during the application.

  5. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    Science.gov (United States)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  6. Formation of cobalt silicide by ion beam mixing

    Science.gov (United States)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  7. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

    Science.gov (United States)

    Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

    2017-11-07

    This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

  8. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

    Directory of Open Access Journals (Sweden)

    Yu-Ru Lin

    2017-11-01

    Full Text Available This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs. The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A, subthreshold slope (186 mV/dec., and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

  9. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  10. Silicon and silicide nanowires applications, fabrication, and properties

    CERN Document Server

    Tu, King-Ning

    2013-01-01

    This book comprises theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and preparation techniques, and some promising applications. It comprises nine chapters. The first three are based on processing, the next three on properties, and the last three on applications of nanowires of silicon and silicides.

  11. Spin, Charge, and Bonding in Transition Metal Mono Silicides

    NARCIS (Netherlands)

    Marel, D. van der; Damascelli, A.; Schulte, K.; Menovsky, A. A.

    1997-01-01

    Published in: Physica B 244 (1998) 138-147 citations recorded in [Science Citation Index] Abstract: We review some of the relevant physical properties of the transition metal mono-silicides with the FeSi structure (CrSi, MnSi, FeSi, CoSi, NiSi, etc) and explore the relation between their structural

  12. Texture in thin film silicides and germanides: A review

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C. [Department of Solid State Sciences, Ghent University, Ghent (Belgium); Lavoie, C. [IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

    2016-09-15

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  13. Determination of scandium concentrate composition by WD-XRF and ICP-MS methods

    Science.gov (United States)

    Sarkisova, A. S.; Shibitko, A. O.; Abramov, A. V.; Rebrin, O. I.; Bunkov, G. M.; Lisienko, D. G.

    2017-09-01

    WD-XRF spectroscopy was applied for determining composition of scandium concentrate (ScC) containing 70 % scandium fluoride. Determination of ScC composition was performed using 6 glass beads reference materials produced by fusing synthesized mixture of analyte compounds with the lithium-borate flux in the ratio of 1:10. ScC powder with the known composition was then used as a powder pellet reference material to analyze scandium concentrate from technological line by external standard method. ICP-MS method was employed to control the ScC composition. The statistical data processing and metrological parameters evaluation of the analytical technique developed were carried out.

  14. Nanoscale contact engineering for Silicon/Silicide nanowire devices

    Science.gov (United States)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  15. Tin etching from metallic and oxidized scandium thin films

    Science.gov (United States)

    Pachecka, M.; Lee, C. J.; Sturm, J. M.; Bijkerk, F.

    2017-08-01

    The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show that Sn adsorbs rather weakly to a non-oxidized Sc surface, and is etched relatively easily by atomic hydrogen. In contrast, the presence of native oxide on Sc allows Sn to adsorb more strongly to the surface, slowing the etching. Furthermore, thinner layers of scandium oxide result in weaker Sn adsorption, indicating that the layer beneath the oxide plays a significant role in determining the adsorption strength. Unexpectedly, for Sn on Sc2O3, and, to a lesser extent, for Sn on Sc, the etch rate shows a variation over time, which is explained by surface restructuring, temperature change, and hydrogen adsorption saturation.

  16. Tin etching from metallic and oxidized scandium thin films

    Directory of Open Access Journals (Sweden)

    M. Pachecka

    2017-08-01

    Full Text Available The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show that Sn adsorbs rather weakly to a non-oxidized Sc surface, and is etched relatively easily by atomic hydrogen. In contrast, the presence of native oxide on Sc allows Sn to adsorb more strongly to the surface, slowing the etching. Furthermore, thinner layers of scandium oxide result in weaker Sn adsorption, indicating that the layer beneath the oxide plays a significant role in determining the adsorption strength. Unexpectedly, for Sn on Sc2O3, and, to a lesser extent, for Sn on Sc, the etch rate shows a variation over time, which is explained by surface restructuring, temperature change, and hydrogen adsorption saturation.

  17. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  18. Extraction of scandium by liquid di-2-ethylhexylphosphoric acid in fusible diluents

    Directory of Open Access Journals (Sweden)

    Ainur Isatayeva

    2015-03-01

    Full Text Available Currently widespread distribution of extraction methods using fusible reagents can be explained by a number of advantages, such as high kinetic characteristics of the process, the ease separation of two phases, high selectivity of many extractants, relatively complete regeneration. For the extraction of scandium in technological order, neutral and cation exchange extractants can be used. Several extraction reagents melt easily at high temperatures, and such melts can be used for extraction. Efficiency of the extraction of metal by cation reagents depends on many factors. Extraction of scandium by melt mixtures of di-2-ethylhexylphosphoric acid - higher carboxylic acid - paraffin and the effect of acidity of the aqueous phase, the concentration of scandium and the aqueous extractant in the organic phase, the volume ratio of organic and aqueous phases on the extraction of metal were studied. It was found that the extraction of scandium proceeds through the cation exchange mechanism. Scandium was extracted quantitatively (> 99.0% from acid solutions. The optimal concentration of di-2-ethylhexylphosphoric acid in the extractant was 0,250 M, quantitative extraction of scandium was observed in the range of its concentrations of 10-3-10-6 M and the volume ratio of organic phases to aqueous phases of 1:5 - 1:20.

  19. Electronic properties of semiconducting silicides: fundamentals and recent predictions

    Energy Technology Data Exchange (ETDEWEB)

    Ivanenko, L.I.; Shaposhnikov, V.L.; Filonov, A.B.; Krivosheeva, A.V.; Borisenko, V.E.; Migas, D.B.; Miglio, L.; Behr, G.; Schumann, J

    2004-08-02

    This review emphasizes progress in theoretical simulation and experiments that have been performed in the past years for semiconducting silicides. New fundamental electronic and optical properties of Ca{sub 2}Si and BaSi{sub 2}, recently found RuSi{sub 2} phase, ternaries in Fe-Os-Si and Ru-Os-Si systems, {beta}-FeSi{sub 2}, Mg{sub 2}Si and CrSi{sub 2} with stretched and compressed lattices as well as transport properties of {beta}-FeSi{sub 2}, ReSi{sub 1.75}, Ru{sub 2}Si{sub 3} are presented. Prospects for practical applications of semiconducting silicides are discussed.

  20. Reactive growth of niobium silicides in bulk diffusion couples

    Energy Technology Data Exchange (ETDEWEB)

    Milanese, Chiara; Buscaglia, Vincenzo; Maglia, Filippo; Anselmi-Tamburini, Umberto

    2003-09-15

    The diffusion-controlled growth of niobium silicides (NbSi{sub 2} and Nb{sub 5}Si{sub 3}) was studied in Nb/Si and Nb/NbSi{sub 2} bulk diffusion couples annealed at 1200-1350 degree sign C for 2-24 h. Both compounds were found to grow as parallel layers, according to the parabolic rate law. The concept of the integrated diffusion coefficient is used to describe the growth kinetics of the two silicides. The corresponding activation energy is 263 kJ/mol for Nb{sub 5}Si{sub 3} and 304 kJ/mol for NbSi{sub 2}. The activation energy (in eV) scales as 0.98T{sub m}(K)/1000 for Nb{sub 5}Si{sub 3} and as 1.4T{sub m}(K)/1000 for NbSi{sub 2} in agreement with the general behavior observed for many transition metal silicides. The position of the Kirkendall plane inside the Nb{sub 5}Si{sub 3} layer developed in Nb/NbSi{sub 2} couples indicates that, in the present temperature range, the diffusion of Si in Nb{sub 5}Si{sub 3} is considerably faster than that of Nb.

  1. Syntheses of Nanostructure Bundles Based on Semiconducting Metal Silicides

    Science.gov (United States)

    Li, Wen; Ishikawa, Daisuke; Tatsuoka, Hirokazu

    2013-08-01

    A variety of nanostructure bundles and arrays based on semiconducting metal silicides have been synthesized using abundant and non-toxic starting materials. Three types of fabrication techniques of the nanostructure bundles or arrays, including direct growth, template synthesis using natural nanostructured materials and template synthesis using artificially fabricated nanostructured materials are demonstrated. CrSi2 nanowire bundles were directly grown by the exposure of Si substrates to CrCl2 vapor at atmospheric pressure. A hexagonal MoSi2 nanosheet, Mg2Si/MgO composite nanowire and Mg2Si nanowire bundles and MnSi1.7 nanowire array were synthesized using a MoS2 layered material, a SiOx nanofiber bundle, a Si nanowire array, and a Si nanowire array as the templates, respectively. Additionally, the fabrication phenomenon and structural properties of the nanostructured semiconducting metal silicides were investigated. These reactions provided the low-cost and controllable synthetic techniques to synthesize large scale and one-dimensional semiconducting metal silicides for thermoelectric applications.

  2. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  3. Thermodynamic and kinetic study of scandium(III) complexes of DTPA and DOTA: a step toward scandium radiopharmaceuticals.

    Science.gov (United States)

    Pniok, Miroslav; Kubíček, Vojtěch; Havlíčková, Jana; Kotek, Jan; Sabatie-Gogová, Andrea; Plutnar, Jan; Huclier-Markai, Sandrine; Hermann, Petr

    2014-06-23

    Diethylenetriamine-N,N,N',N'',N''-pentaacetic acid (DTPA) and 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA) scandium(III) complexes were investigated in the solution and solid state. Three (45)Sc NMR spectroscopic references suitable for aqueous solutions were suggested: 0.1 M Sc(ClO4)3 in 1 M aq. HClO4 (δSc =0.0 ppm), 0.1 M ScCl3 in 1 M aq. HCl (δSc =1.75 ppm) and 0.01 M [Sc(ox)4](5-) (ox(2-) = oxalato) in 1 M aq. K2C2O4 (δSc =8.31 ppm). In solution, [Sc(dtpa)](2-) complex (δSc = 83 ppm, Δν = 770 Hz) has a rather symmetric ligand field unlike highly unsymmetrical donor atom arrangement in [Sc(dota)](-) anion (δSc = 100 ppm, Δν = 4300 Hz). The solid-state structure of K8[Sc2(ox)7]⋅13 H2O contains two [Sc(ox)3](3-) units bridged by twice "side-on" coordinated oxalate anion with Sc(3+) ion in a dodecahedral O8 arrangement. Structures of [Sc(dtpa)](2-) and [Sc(dota)](-) in [(Hguanidine)]2[Sc(dtpa)]⋅3 H2O and K[Sc(dota)][H6 dota]Cl2⋅4 H2O, respectively, are analogous to those of trivalent lanthanide complexes with the same ligands. The [Sc(dota)](-) unit exhibits twisted square-antiprismatic arrangement without an axial ligand (TSA' isomer) and [Sc(dota)](-) and (H6 dota)(2+) units are bridged by a K(+) cation. A surprisingly high value of the last DOTA dissociation constant (pKa =12.9) was determined by potentiometry and confirmed by using NMR spectroscopy. Stability constants of scandium(III) complexes (log KScL 27.43 and 30.79 for DTPA and DOTA, respectively) were determined from potentiometric and (45)Sc NMR spectroscopic data. Both complexes are fully formed even below pH 2. Complexation of DOTA with the Sc(3+) ion is much faster than with trivalent lanthanides. Proton-assisted decomplexation of the [Sc(dota)](-) complex (τ1/2 =45 h; 1 M aq. HCl, 25 °C) is much slower than that for [Ln(dota)](-) complexes. Therefore, DOTA and its derivatives seem to be very suitable ligands for scandium

  4. Effects of iron on intermetallic compound formation in scandium modified Al–Si–Mg Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Patakham, Ussadawut [National Metal and Materials Technology Center, National Science and Technology Development Agency, 114 Thailand Science Park, Klong Nueng, Klong Luang, Pathumthani 12120 (Thailand); Limmaneevichitr, Chaowalit, E-mail: chaowalit.lim@mail.kmutt.ac.th [Production Engineering Department, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand)

    2014-12-15

    Highlights: • Iron reduces the modification effects of scandium in Al–Si–Mg alloys. • Morphologies of Sc-rich intermetallic phases vary with Fe and Sc contents and the cooling rates. • Sc neutralizes effects of Fe by changing Fe-rich intermetallic phases from platelets to more cubic. - Abstract: In general, iron has a strong tendency to dissolve in molten aluminum. Iron has very low solid solubility in aluminum–silicon casting alloys, so it will form intermetallic compounds that cause detrimental effects on mechanical properties. In this work, the effects of iron on intermetallic compound formations in scandium modified Al–Si–Mg alloys were studied. There were two levels of iron addition (0.2 and 0.4 wt.%) and two levels of scandium addition (0.2 and 0.4 wt.%). We found that the effects of scandium modification decreased with increasing iron addition. The morphologies of the complex intermetallic compounds were characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and electron backscatter diffraction (EBSD) techniques. It was found that scandium changes the morphology of Fe-rich intermetallic compounds from β-phase (plate-like) to α-phase, which reduces the harmful effects of β-phase.

  5. Solvent extraction of scandium from lateritic nickel- cobalt ores using different organic reagents

    Directory of Open Access Journals (Sweden)

    Ferizoğlu Ece

    2016-01-01

    Full Text Available Scandium is the most important and strategic metal that can be recovered as a by-product from lateritic nickel-cobalt ores. In this research, different extractants were investigated in order to extract scandium from a sulfate medium by a using a solvent extraction method. Generally, the organic extractants are classified as acidic, neutral and basic organophosphorus compounds. However, in solvent extraction of scandium, the acidic and neutral organophosphorus compounds are preferred due to their higher extraction efficiencies. Thus, the aim of the present study was to compare the scandium extraction efficiencies of some acidic and neutral organic reagents. For this reason, Ionquest 290 (Bis(2,4,4-trimethylpenthyl phosphonic acid, DEHPA (Di(2-ethylhexyl phosphoric acid, Cyanex 272 ((Bis(2,4,4-trimethylpentyl phosphinic acid which are acidic organophosphorus compounds, and Cyanex 923 (Trialkylphosphine oxide, which is a neutral organophosphorus compound, were used. The extraction capacities of these organics were studied with respect to the extractant concentration at same pH and phase ratio. As a result of the study, DEHPA was found to have higher scandium extraction efficiency with lower iron extraction at pH = 0.55 at a phase ratio of 10:1 = A:O.

  6. Correlation between stoichiometry and properties of scandium oxide films prepared by reactive magnetron sputtering

    Science.gov (United States)

    Belosludtsev, Alexandr; Juškevičius, Kęstutis; Ceizaris, Lukas; Samuilovas, Romanas; Stanionytė, Sandra; Jasulaitienė, Vitalija; Kičas, Simonas

    2018-01-01

    Scandium oxide films were deposited on fused silica substrates by reactive pulsed DC magnetron sputtering. The use of feed-back optical emission monitoring enabled high-rate reactive deposition of films with tunable stoichiometry and properties. The under-stoichiometric, stoichiometric and over-stoichiometric scandium oxide films were prepared. The compressive stress in films was between 235 and 530 MPa. We showed that phase structure, density, surface roughness and optical properties of the scandium oxide are affected by the film stoichiometry and deposition conditions. Transparent scandium oxide films were slightly hydrophobic (94 ± 3°), homogeneous with a crystallite size of 20 ± 5 nm. The lowest extinction coefficient 0.7 × 10-3, the highest refractive index 2.08 (both quantities at the wavelength of 355 nm) and the highest density 4.1 ± 0.1 g cm-3 exhibited film prepared with the stoichiometric composition. Stoichiometric scandium oxide can be used in various optical applications as high refractive index and wide bandgap material. Transitions to under- or over-stoichiometry lead to a decrease of film density, refractive index and increase of the extinction coefficient.

  7. Oxidation behavior of multiphase molybdenum-molybdenum silicide-molybdenum silicide boride intermetallics

    Science.gov (United States)

    Dheeradhada, Voramon Supatarawanich

    Multiphase Mo-Mo3Si-Mo5SiB2(T2) alloys of various compositions and microstructures were investigated for oxidation resistance at 800 and 1300°C. The alloys varied in Si/B ratio from 1:1 to 1:2 and their microstructures were processed to have the Mo phase distributed as a continuous phase or as discrete particles. At 800°C, the alloys exhibited poor oxidation resistance regardless of Si/B ratio or their microstructures. Oxide scale consisted of MoO 3 and boron-containing glass. Alloys with lower Si/B ratio yielded silicate glass with lower viscosity that resulted in lower weight loss compared to the high Si/B ratio alloys. Intermediate layers of Mo and Mo-Si-O were observed adjacent to Mo5SiB2 and Mo3Si phases, respectively. At 1300°C, the multiphase alloys developed a protective glass scale with an intermediate layer of (Mo+glass) between the base alloy and outer glass scale. Boron-lean silicate glass was essential for the protection from further oxidation. For oxidation resistance at 1300°C, alloys require a high Si/B ratio. In terms of microstructures, the multiphase alloys consisting of small Mo particles uniformly dispersed in fine spacing of silicide phases provide better oxidation resistance than the alloys with continuous Mo dendrites. Glass preferentially formed at Mo3Si rather than at T2 phase. Vapor-solid diffusion experiments were carried out with single phase alloys containing either Mo3Si or T2 as the major phase, and the multiphase Mo-10Si-10B(at%) alloy. The alloys were exposed to vacuum to induce silicon loss resulting in the formation of a Mo layer. In addition, microprobe analysis was carried out for the determination of composition profiles across the (Mo+glass) layer and the external glass scale formed on the Mo-13.2Si-13.2B (at%) alloy oxidized at 1300°C. The microprobe data were analyzed for interdiffusion fluxes and interdiffusion coefficients with the aid of a computer program called "MultiDiFlux (c)". The effective interdiffusion

  8. Mossbauer investigation of scandium oxide-hematite nanoparticles

    Science.gov (United States)

    Allwes, Mark; Sorescu, Monica

    Scandium oxide-doped hematite, xSc2O3*(1-x)alpha-Fe2O3 with molar concentration x =0.1, 0.3, and 0.5 was prepared by using ball milling, taking samples at times 0, 2, 4, 8, and 12 hours. The resulting Mossbauer spectra of the nanoparticles systems were parameterized using NORMOS-90. For each concentration, the spectra at 0 hours only consisted of 1 sextet, as the substitution of Sc2O3into Fe2O3 did not appear until after 2 hours of ball milling time (BMT). Concentration x =0.1 at BMT 2hours consisted of 2 sextets while x =0.3 and 0.5 were fit with 1 sextet and 1 quadrupole-split doublet. Concentration x =0.1 at BMT 4 and 8 hours consisted of 3 sextets, and at BMT 12 hours consisted of 4 sextets. For concentrations x =0.3 and 0.5 at BMT 4, 8, and 12 hours the spectra were fit with 3 sextets and 1 quadrupole-split doublet. With increasing initial concentration, the appearance of the quadrupole-split doublet became more pronounced, indicating the substitution of Fe into Sc2O3 occurred. But for x =0.1, the BMT did influence the number of sextets needed, causing an increase in substitution of Sc2O3 into Fe2O3.

  9. Association between toenail scandium levels and risk of acute myocardial infarction in European men: The EURAMIC and Heavy Metals Study

    NARCIS (Netherlands)

    Gómez-Aracena, J.; Martin-Moreno, J.M.; Riemersma, R.A.; Bode, P.; Gutiérrez-Bedmar, M.; Gorgojo, L.; Kark, J.D.; Garcia-Rodríguez, A.; Gomez-Gracia, E.; Kardinaal, A.F.M.; Aro, A.; Veer, P. van 't; Wedel, H.; Kok, F.J.; Fernández-Crehuet, J.

    2002-01-01

    The association between scandium status and risk of acute myocardial infarction (MI) was examined in a multicentre case control study in 10 centres from Europe and Israel. Scandium in toenails was assessed in 684 cases and 724 controls less than 70 years of age. Mean concentrations of toenail

  10. XRD and XPS characterisation of transition metal silicide thin films

    Science.gov (United States)

    Tam, P. L.; Cao, Y.; Nyborg, L.

    2012-02-01

    Binary transition metal silicides based on the systems Ti-Si, Fe-Si, Ni-Si and Cr-Si were fabricated on Si wafers by means of ion-beam co-sputter deposition and subsequent annealing. The crystalline structures of the phases formed were identified from the characteristic patterns acquired by means of X-ray diffraction (XRD) measurements. The phase formation sequences were described by means of the Pretorius' effective heat of formation (EHF) model. For the Ti-Si, Fe-Si and Ni-Si systems, single phase thin films of TiSi2, β-FeSi2 and NiSi2 were generated as the model predicts, while a mixture of CrSi + CrSi2 phases was obtained for the Cr-Si system. The surface chemical condition of individual specimens was analysed by using X-ray photoelectron spectroscopy (XPS). The chemical shifts of transition metal 2p3/2 peaks from their metallic to silicide states were depicted by means of the Auger parameters and the Wagner plots. The positive chemical shift of 2.0 eV for Ni 2p3/2 peak of NiSi2 is mainly governed by the initial-state effects. For the other silicide specimens, the initial-state and final-state effects may oppose one another with similar impact. Consequently, smaller binding energy shifts of both negative and positive character are noted; a positive binding energy shift of 0.3 eV for the Fe 2p3/2 level was shown for β-FeSi2 and negative binding energy shifts of 0.1 and 0.3 eV were determined for CrSi + CrSi2 and TiSi2, respectively.

  11. In-source laser spectroscopy developments at TRILIS-towards spectroscopy on actinium and scandium

    Energy Technology Data Exchange (ETDEWEB)

    Raeder, Sebastian, E-mail: raeder@triumf.ca; Dombsky, Marik; Heggen, Henning; Lassen, Jens; Quenzel, Thomas [TRIUMF, Canada' s National Laboratory for Nuclear and Particle Physics (Canada); Sjoedin, Marica [GANIL (France); Teigelhoefer, Andrea [TRIUMF, Canada' s National Laboratory for Nuclear and Particle Physics (Canada); Wendt, Klaus [Johannes Gutenberg-Universitaet Mainz, Institut fuer Physik (Germany)

    2013-04-15

    Resonance Ionization Laser Ion Sources (RILIS) have become a versatile tool for production and study of exotic nuclides at Isotope Separator On-Line (ISOL) facilities such as ISAC at TRIUMF. The recent development and addition of a grating tuned spectroscopy laser to the TRIUMF RILIS solid state laser system allows for wide range spectral scans to investigate atomic structures on short lived isotopes, e.g., those from the element actinium, produced in uranium targets at ISAC. In addition, development of new and improved laser ionization schemes for rare isotope production at ISAC is ongoing. Here spectroscopic studies on bound states, Rydberg states and autoionizing (AI) resonances on scandium using the existing off-line capabilities are reported. These results allowed to identify a suitable ionization scheme for scandium via excitation into an autoionizing state at 58,104 cm{sup - 1} which has subsequently been used for ionization of on-line produced exotic scandium isotopes.

  12. Process and Mechanical Properties: Applicability of a Scandium modified Al-alloy for Laser Additive Manufacturing

    Science.gov (United States)

    Schmidtke, K.; Palm, F.; Hawkins, A.; Emmelmann, C.

    The applicability of an aluminium alloy containing scandium for laser additive manufacturing (LAM) is considered. Modified aluminium alloys with a scandium content beyond the eutectic point offer great potential to become a high prioritized aerospace material. Depending on other alloying elements like magnesium or zirconium, strongly required weight reduction, corrosion resistance and improved strength properties of metallic light weight alloys can be achieved. The development, production and testing of parts built up by a laser powder bed process will be presented with regard to the qualification of the new material concept "ScalmalloyRP®" for laser additive manufacturing.

  13. Growth and stability of dysprosium silicide nanostructures on Si(001)

    Science.gov (United States)

    Zeman, Matthew; Nemanich, Robert

    2007-03-01

    The growth and coarsening dynamics of epitaxial dysprosium silicide nanostructures on Si(001) are observed using tunable ultra-violet free electron laser excitation for photo-electron emission microscopy (PEEM). A dense array of compact silicide nanostructures is observed to coarsen during annealing at 950-1050C. Some of the nanostructures grow into large flat-topped rectangular islands at the expense of smaller islands which disappear via Ostwald ripening. The coarsening rate of the island distribution increases with increasing temperature, and the formation of a flat top on the growing islands is related to strain relaxation. Additionally, the shape and growth rates of the islands may be influenced by the island crystal structure and/or local island distributions. A subsequent deposition of dysprosium onto the surface results in the nucleation of new island and nanowire structures. Immediately after the deposition is terminated the nanowires begin to decay from the ends while the larger island structures grow. The decay of the wires can be attributed to Ostwald ripening and is explained in terms of the Gibbs-Thompson relation, where the high adatom concentration at the nanowire ends leads to the diffusion of adatoms away from the wires towards the larger surrounding structures. In situ movies will be presented which detail the growth and coarsening processes.

  14. Synthesis and structural characterization of scandium SALEN complexes.

    Science.gov (United States)

    Meermann, Christian; Sirsch, Peter; Törnroos, Karl W; Anwander, Reiner

    2006-02-28

    A series of heteroleptic scandium SALEN complexes, [(SALEN)Sc(mu-Cl)]2 and (SALEN)Sc[N(SiHMe2)2] is obtained via amine elimination reactions using [Sc(N(i)Pr2)2(mu-Cl)(THF)]2 and Sc[N(SiHMe2)2]3(THF) as metal precursors, respectively. H(2)SALEN ligand precursors comprising H2Salen [(1,2-ethandiyl)bis(nitrilomethylidyne)bis(2,4-di-tert-butyl)phenol], H2Salpren [(2,2-dimethylpropanediyl)bis(nitrilomethylidyne)bis(2,4-di-tert-butyl)phenol], H2Salcyc [(1R,2R)-(-)-1,2-cyclohexanediyl)bis(nitrilomethylidyne)bis(2,4-di-tert-butyl)phenol] and H2Salphen [((1S,2S)-(-)-1,2-diphenylethandiyl)bis(nitrilomethylidyne)bis(2,4-di-tert-butyl)phenol] are selected according to solubility and ligand backbone variation ("=N-(R)-N=" bite angle) criteria. Consideration is given to the feasibility of [Cl --> NR2] and [N(SiHMe2)2--> OSiR3] secondary ligand exchange reactions. X-ray crystal structure analyses of donor-free (Salpren)Sc(N(i)Pr2), (R,R)-(Salcyc)Sc[N(SiHMe2)2], (Salen)Sc(OSi(t)BuPh2) and (Salphen)Sc(OSiH(t)Bu2) reveal (i) a very short Sc-N bond distance of 2.000(3) A, (ii) weak beta(Si-H)(amido)-Sc agostic interactions and (iii) an exclusive intramolecularly tetradentate and intrinsically bent coordination mode of the SALEN ligands with angle(Ph,Ph) dihedral angles and Sc-[N(2)O(2)] distances in the 124.27(9)-127.7(3) degrees and 0.638(1)-0.688(1) A range, respectively.

  15. Scandium SALEN complexes bearing chloro, aryloxo, and hydroxo ligands.

    Science.gov (United States)

    Meermann, Christian; Törnroos, Karl W; Anwander, Reiner

    2009-03-16

    Heteroleptic amide complexes (SALEN)Sc[N(SiHMe(2))(2)] (SALEN = Salen(tBu,tBu), Salcyc(tBu,tBu), or Salpren(tBu,tBu) if not stated differently) were examined as synthesis precursors according to silylamine elimination reactions. Treatment of (SALEN)Sc[N(SiHMe(2))(2)] with H(2)O or phenols (HOAr(R,R); R = tBu, iPr) afforded complexes [(SALEN)Sc(mu-OH)](2) and (SALEN)Sc(OAr(R,R)), while chloro exchange products were formed from the respective reactions with NH(4)Cl or AlMe(2)Cl. Such complexes [(SALEN)Sc(mu-Cl)](2) and (SALEN)ScCl(thf) were also obtained by utilizing alternative synthesis protocols, allowing for controlled donor absence and presence. Heteroleptic amide precursors [Sc(NiPr(2))(2)(mu-Cl)(thf)](2) and [Sc[N(SiHMe(2))(2)](2)(mu-Cl)(thf)](2) readily undergo amine elimination reactions with H(2)SALEN derivatives to form the corresponding chloride complexes. Spectroscopic and X-ray structural data of the heteroleptic scandium complexes revealed an exclusive intramolecular tetradentate coordination mode of the SALEN ligands independent of the SALEN ligand bite angle and the nature of the "second" ligand (chloro, amido, aryloxo, hydroxo). The coordination of the SALEN ligands is rationalized on the basis of (a) the displacement d of the metal center from the [N(2)O(2)] least-squares plane, (b) the dihedral angle alpha between the phenyl rings of the salicylidene moieties, and (c) the angle beta = Ct-Ln-Ct (Ct = centroid of the phenyl rings) in the case of strongly twisted ligands.

  16. Vertical distribution of scandium in the north central Pacific

    Science.gov (United States)

    Amakawa, Hiroshi; Nomura, Miho; Sasaki, Kazunori; Oura, Yasuji; Ebihara, Mitsuru

    2007-06-01

    The concentrations of scandium (Sc) in seawater, which have remained unreported since the early 1970s, were determined together with those of yttrium (Y) and lanthanides (Ln) with samples from the north central Pacific Ocean (St. BO-3). The Sc concentration shows a so-called nutrient-like profile: it increases gradually from the surface (about 2 pmol/kg) to the ocean floor (about 20 pmol/kg). That pattern closely resembles those of Y and Ln (correlation coefficient (r) > 0.92). Some light-to-middle Ln (Pr-Tb) exhibit a closer correlation with Sc than do Y, La, or heavy Ln (Ho-Lu). In contrast, Y/Sc and Ln/Sc ratios (elemental abundance ratios) indicate that Sc is depleted compared to either Y or Ln in seawater more than in loess, which represents chemical compositions of crustal material. These observations offer a conflicting view of chemical reactivity related Y, Ln, and Sc: r values show that the chemical reactivity of Sc resembles those of Y and Ln, but differences of Y/Sc and Ln/Sc ratios in seawater and in loess suggest that the chemical reactivity of Sc differs from those of Y and Ln. More Sc data for seawater are necessary to clarify the chemical reactivity of Sc in the ocean. We also propose that comparative studies of vertical profiles of Sc and such elements as Fe, Ti, Zr, and Hf showing so-called nutrient-like profiles at the same oceanic stations would be helpful and effective for clarifying the behavior of Sc in the ocean.

  17. Influence of IR-laser irradiation on {alpha}-SiC-chromium silicides ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Vlasova, M. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico)]. E-mail: kakazey@hotmail.com; Marquez Aguilar, P.A. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico); Resendiz-Gonzalez, M.C. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico); Kakazey, M. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico); Bykov, A. [Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Str. Krzhizhanovskogo 3, Kiev 252680 (Ukraine); Gonzalez Morales, I. [Centro de Investigaciones en Ingenieria y Ciencias Aplicadas, Autonomous University of State of Morelos, Av. Universidad 1001-Col. Chamilpa, 62210 Cuernavaca, Morelos (Mexico)

    2005-09-15

    This project investigated the influence of IR-laser irradiation ({lambda} = 1064 nm, P = 240 mW) on composite ceramics SiC-chromium silicides (CrSi{sub 2}, CrSi, Cr{sub 5}Si{sub 3}) by methods of X-ray diffraction, electron microscopy, atomic force microscopy, and X-ray microanalysis. Samples were irradiated in air. It was established that a surface temperature of 1990 K was required to melt chromium silicides, evaporate silicon from SiC, oxidize chromium silicides, and enrich superficial layer by carbon and chromium oxide.

  18. In situ observation of the reaction of scandium and carbon by neutron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Juarez-Arellano, Erick A., E-mail: eajuarez@unpa.edu.m [Institut fuer Geowissenschaften, Universitaet Frankfurt, Altenhoeferallee 1, 60438 Frankfurt a.M. (Germany); Universidad del Papaloapan, Circuito Central 200, Parque Industrial, Tuxtepec 68301 (Mexico); Winkler, Bjorn [Institut fuer Geowissenschaften, Universitaet Frankfurt, Altenhoeferallee 1, 60438 Frankfurt a.M. (Germany); Vogel, Sven C. [Los Alamos National Laboratory, Lujan Center. Mail Stop H805, Los Alamos, NM 87545 (United States); Senyshyn, Anatoliy [Forschungsneutronenquelle Heinz Maier-Leibnitz (FRM II), Technische Universitaet Muenchen, Lichtenbergstr. 1, D-85747 Garching (Germany); Materialwissenschaft, TU Darmstadt, Petersensstr. 23, D-64287 Darmstadt (Germany); Kammler, Daniel R. [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Avalos-Borja, Miguel [CNyN, UNAM, A. Postal 2681, Ensenada, B.C. (Mexico)

    2011-01-05

    Research highlights: {yields} Exist two ScC cubic phases with B1-structure type differing in site occupancy of C. {yields} A new orthorhombic scandium carbide phase is formed at 1473(50) K. {yields} The recrystallization of alpha-Sc occurs between 1000 and 1223 K. - Abstract: The formation of scandium carbides by reaction of the elements has been investigated by in situ neutron diffraction up to 1823 K. On heating, the recrystallization of {alpha}-Sc occurs between 1000 and 1223 K. The formation of Sc{sub 2}C and ScC (NaCl-B1 type structure) phases has been detected at 1323 and 1373 K, respectively. The formation of a new orthorhombic scandium carbide phase was observed at 1473(50) K. Once the scandium carbides are formed they are stable upon heating or cooling. No other phases were detected in the present study, in which the system was always carbon saturated. The thermal expansion coefficients of all phases have been determined, they are constant throughout the temperature interval studied.

  19. The effects of aluminum or scandium on the toughness, density and ...

    African Journals Online (AJOL)

    The effects of the substitution of aluminum or scandium on the density, toughness as well as the stability of the phases formed by such an addition on platinum, iridium, rhodium and palladium metals were evaluated with the density functional quantum mechanical calculation methods. All the metals had four atoms per ...

  20. Effects of erbium‑and chromium‑doped yttrium scandium gallium ...

    African Journals Online (AJOL)

    2014-08-21

    Aug 21, 2014 ... surfaces because of its high power, and the ablation was deeper for these samples. High‑magnification SEM ... Key words: Erbium chromium‑doped yttrium scandium gallium garnet, diode laser, restorative dental materials, scanning electron ... garnet (Nd: YAG) and carbon dioxide (CO2) lasers on indirect ...

  1. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    Directory of Open Access Journals (Sweden)

    Polley Craig

    2011-01-01

    Full Text Available Abstract We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

  2. NMOS contact resistance reduction with selenium implant into NiPt silicide

    Science.gov (United States)

    Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

    2012-11-01

    A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

  3. Silicon to Nickel Silicide Longitudinal Nanowire Heterostructures: Synthesis, Electrical Characterization and Novel Devices

    OpenAIRE

    Weber, Walter Michael

    2009-01-01

    The scope of this thesis is the synthesis and electrical characterization of Si to Ni silicide nanowire heterostructures with the focus on investigating their electronic transport properties and conceiving a novel type of transistor. Intrinsic Si nanowires (SiNW) were grown employing the vapor-liquid-solid mechanism. A central part of this thesis is the development of the longitudinal intrusion of Ni silicide into the SiNWs resulting in interfaces with a sharpness of at most a couple of n...

  4. Status of the atomized uranium silicide fuel development at KAERI

    Energy Technology Data Exchange (ETDEWEB)

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H. [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1997-08-01

    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  5. Development of molecular dynamics potential for uranium silicide fuels

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jianguo; Zhang, Yongfeng; Hales, Jason D.

    2016-09-01

    Use of uranium–silicide (U-Si) in place of uranium dioxide (UO2) is one of the promising concepts being proposed to increase the accident tolerance of nuclear fuels. This is due to a higher thermal conductivity than UO2 that results in lower centerline temperatures. U-Si also has a higher fissile density, which may enable some new cladding concepts that would otherwise require increased enrichment limits to compensate for their neutronic penalty. However, many critical material properties for U-Si have not been determined experimentally. For example, silicide compounds (U3Si2 and U3Si) are known to become amorphous under irradiation. There was clear independent experimental evidence to support a crystalline to amorphous transformation in those compounds. However, it is still not well understood how the amorphous transformation will affect on fuel behavior. It is anticipated that modeling and simulation may deliver guidance on the importance of various properties and help prioritize experimental work. In order to develop knowledge-based models for use at the engineering scale with a minimum of empirical parameters and increase the predictive capabilities of the developed model, inputs from atomistic simulations are essential. First-principles based density functional theory (DFT) calculations will provide the most reliable information. However, it is probably not possible to obtain kinetic information such as amorphization under irradiation directly from DFT simulations due to size and time limitations. Thus, a more feasible way may be to employ molecular dynamics (MD) simulation. Unfortunately, so far no MD potential is available for U-Si to discover the underlying mechanisms. Here, we will present our recent progress in developing a U-Si potential from ab initio data. This work is supported by the Nuclear Energy Advanced Modeling and Simulation (NEAMS) program funded by the U.S. Department of Energy, Office of Nuclear Energy.

  6. Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A.R. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)]. E-mail: ars.iitkgp@gmail.com; Chattopadhyay, S. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India); School of Electrical, Electronics and Computer Engineering, University of Newcastle, Newcastle upon Tyne (United Kingdom); Bose, C. [Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta 700032 (India); Maiti, C.K. [Department of Electronics and ECE, IIT, Kharagpur 721302 (India)

    2005-12-05

    Technology CAD has been used to study the performance of a silicided Schottky barrier (SB) MOSFET with gate, source and drain contacts realized with nickel-silicide. Elevated source-drain structures have been used towards the S/D engineering of CMOS devices. A full process-to-device simulation has been employed to predict the performance of sub-micron SB n-MOSFETs for the first time. A model for the diffusion and alloy growth kinetics has been incorporated in SILVACO-ATLAS and ATHENA to explore the processing and design parameter space for the Ni-silicided MOSFETs. The temperature and concentration dependent diffusion model for NiSi have been developed and necessary material parameters for nickel-silicide and epitaxial-Si have been incorporated through the C-interpreter function. Two-dimensional (2D) process-to-device simulations have also been used to study the dc and ac (RF) performance of silicided Schottky barrier (SB) n-MOSFETs. The extracted sheet resistivity, as a function of annealing temperature of the silicided S/D contacts, is found to be lower than the conventional contacts currently in use. It is also shown that the Technology CAD has the full capability to predict the possible dc and ac performance enhancement of a MOSFET with elevated S/D structures. While the simulated dc performance shows a clear enhancement, the RF analyses show no performance degradation in the cut-off frequency/propagation delay and also improve the ac performance due to the incorporation of silicide contacts in the S/D region.

  7. Chemical and biological evaluation of scandium(III)-polyaminopolycarboxylate complexes as potential PET agents and radiopharmaceuticals

    Energy Technology Data Exchange (ETDEWEB)

    Huclier-Markai, S.; Sabatie, A.; Ribet, S. [Univ. de Nantes (France). Lab. Subatech; Kubicek, V.; Hermann, P. [Charles Univ., Prague (Czech Republic). Dept. of Inorganic Chemistry; Paris, M. [Univ. de Nantes (France). Inst. des Materiaux; Vidaud, C. [CEA/DSV/iBEB/SBTN, Bagnols sur Ceze (France). Lab. d' Etude des Proteines Cibles; Cutler, C.S. [Univ. of Missouri, Columbia, MO (United States). Reserach Reactor Center

    2011-07-01

    Scandium isotopes ({sup 44}Sc, {sup 47}Sc) are more available and their properties are convenient for either PET imaging or radiotherapy. To use them in nuclear medicine, ligands forming complexes with a high stability are necessary. Available experimental data on stability constants for complexes of ligands such as EDTA, DTPA, DOTA, NOTA and TETA with various metal ions have been published. But scandium is the exception since scarce data is available in the literature. Values of stability constants of Sc(III) with the ligands were determined by free-ion selective radiotracer extraction, complemented by {sup 45}Sc NMR and potentiometry data. The thermodynamic stability of the Sc-complexes increases in the order TETA < NOTA < EDTA < DTPA < DOTA. The in vitro stability of the Sc(III) complexes was studied in the presence of hydroxyapatite and rat serum to estimate their in vivo stability. The most stable complex was shown to be Sc-DOTA.

  8. Precipitation behaviour and recrystallisation resistance in aluminum alloys with additions of hafnium, scandium and zirconium

    OpenAIRE

    Hallem, Håkon

    2005-01-01

    The overall objective of this work has been to develop aluminium alloys, which after hot and cold deformation are able to withstand high temperatures without recrystallising. This has been done by investigating aluminium alloys with various additions of hafnium, scandium and zirconium, with a main focus on Hf and to which extent it may partly substitute or replace Zr and/or Sc as a dispersoid forming elements in these alloys. What is the effect of hafnium, alone and in combination with Zr...

  9. Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

    Science.gov (United States)

    Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho

    2011-07-01

    Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.

  10. Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.

    Science.gov (United States)

    Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu

    2013-12-01

    We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

  11. Pilot-scale recovery of rare earths and scandium from phosphogypsum and uranium leachates

    Directory of Open Access Journals (Sweden)

    Mashkovtsev Maxim

    2016-01-01

    Full Text Available Ural Federal University (UrFU and VTT have performed joint research on development of industrial technologies for the extraction of REM and Scandium compounds from phosphogypsum and Uranium ISL leachate solutions. Leaching-absorption experiments at UrFU have been supported with multicomponent solution modelling by VTT. The simulations have been performed with VTT’s ChemSheet/Balas program and can be used for speciation calculations in the lixiviant solution. The experimental work combines solvent extraction with advanced ion exchange methodology in a pilot facility capable of treating 5 m3 solution per hour. Currently, the plant produces cerium carbonate, lanthanum oxide, neodymium oxide and concentrate of heavy rare earth metals. A batch of 45 t solids has been processed with the gain of 100 kg’s of REM concentrate. A mini-pilot plant with productivity above 50 liters per hour has been applied to recover scandium oxide and REE concentrates from the uranium ISL solution. As the preliminary product contains radioactivity (mainly strontium, an additional decontamination and cleaning of both concentrates by extraction has rendered a necessity. Finally a purified 99% concentrate of scandium oxide as well as 99% rare earth concentrate are received.

  12. Optimization of scandium oxide growth by high pressure sputtering on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Feijoo, P.C., E-mail: pedronska@fis.ucm.es; Pampillon, M.A.; San Andres, E.; Lucia, M.L.

    2012-12-30

    This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for optimization of the properties of the thin films and the ScO{sub x}/Si interface. The physical characterization was performed by ellipsometry, Fourier transform infrared spectroscopy, x-ray diffraction and transmission electron microscopy. Aluminum gate electrodes were evaporated for metal-insulator-semiconductor (MIS) fabrication. From the electrical characterization of the MIS devices, the density of interfacial defects is found to decrease with deposition pressure, showing a reduced plasma damage of the substrate surface for higher pressures. This is also supported by lower flatband voltage shifts in the capacitance versus voltage hysteresis curves. Sputtering at high pressures (above 100 Pa) reduces the interfacial SiO{sub x} formation, according to the infrared spectra. The growth rates decrease with deposition pressure, so a very accurate control of the layer thicknesses could be provided. - Highlights: Black-Right-Pointing-Pointer Scandium oxide is considered as a high permittivity dielectric. Black-Right-Pointing-Pointer Scandium oxide was deposited on Si by high pressure sputtering. Black-Right-Pointing-Pointer Characterization was performed for deposition condition optimization. Black-Right-Pointing-Pointer High deposition pressures showed higher film and interface quality.

  13. Simulated Fission Gas Behavior in Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Mo, Kun [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States); Harp, Jason [Argonne National Lab. (ANL), Argonne, IL (United States)

    2016-09-15

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well-understood. However, existing experimental post-irradiation examination (PIE) data are limited to the research reactor conditions, which involve lower fuel temperature compared to LWR conditions. This lack of appropriate experimental data significantly affects the development of fuel performance codes that can precisely predict the microstructure evolution and property degradation at LWR conditions, and therefore evaluate the qualification of U3Si2 as an AFT for LWRs. Considering the high cost, long timescale, and restrictive access of the in-pile irradiation experiments, this study aims to utilize ion irradiation to simulate the inpile behavior of the U3Si2 fuel. Both in situ TEM ion irradiation and ex situ high-energy ATLAS ion irradiation experiments were employed to simulate different types of microstructure modifications in U3Si2. Multiple PIE techniques were used or will be used to quantitatively analyze the microstructure evolution induced by ion irradiation so as to provide valuable reference for the development of fuel performance code prior to the availability of the in-pile irradiation data.

  14. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides

    Science.gov (United States)

    Geenen, F. A.; Knaepen, W.; Moens, F.; Brondeel, L.; Leenaers, A.; Van den Berghe, S.; Detavernier, C.

    2016-07-01

    Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit’s cell at elevated temperatures.

  15. Tuning magnetic response of epitaxial iron-silicide nanoislands by controlled self-assembled growth

    Science.gov (United States)

    Goldfarb, I.; Camus, Y.; Dascalu, M.; Cesura, F.; Chalasani, R.; Kohn, A.

    2017-07-01

    We investigated the dependence of the magnetic response from epitaxial Si-rich iron-silicide nanostructures on their geometry. By varying substrate orientation and deposition parameters, we altered the growth kinetics and the lattice matching conditions at the silicide/silicon interface. These affected the silicide nanoisland crystal structure, size, shape, and proximity due to spatial ordering and, consequently, their magnetic response in terms of shape and opening of the respective hysteresis loops. In particular, we demonstrated correlation between magnetic anisotropy, expressed as the hysteresis coercive field, and the nanoisland spatial length-to-width aspect ratio. This correlation is explained by the contribution of undercoordinated island edge atoms to the overall measured magnetic behavior of the nanoisland arrays. Further, the island self-ordering along periodic surface steps adds dipolar interactions between the otherwise superparamagnetic nanoislands, consequently resulting in a magnetic response resembling that of a superspin glass.

  16. Crystal Structure of Silicides in a Ti - 0.7 WT.% Si Nanostructured Alloy

    Science.gov (United States)

    Ivanov, M. B.; Manokhin, S. S.; Kolobova, A. Yu.

    2017-09-01

    Using warm, lengthwise grooved-roll processing of the Ti - 0.7 wt.% Si alloy, a nanostructured state is formed in it at 873 K with the grain-subgrain elements measuring about 280 nm. The titanium silicides precipitating during the dynamic strain-induced aging of the alloy are investigated by the methods of high-resolution scanning electron microscopy. It is found that the shape of the silicides is close to spherical, they have an FCClattice and an incoherent interface with the matrix.

  17. Optical anisotropy of quasi-1D rare-earth silicide nanostructures on Si(001)

    Science.gov (United States)

    Chandola, S.; Speiser, E.; Esser, N.; Appelfeller, S.; Franz, M.; Dähne, M.

    2017-03-01

    Rare earth metals are known to interact strongly with Si(001) surfaces to form different types of silicide nanostructures. Using STM to structurally characterize Dy and Tb silicide nanostructures on vicinal Si(001), it will be shown that reflectance anisotropy spectroscopy (RAS) can be used as an optical fingerprint technique to clearly distinguish between the formation of a semiconducting two-dimensional wetting layer and the metallic one-dimensional nanowires. Moreover, the distinctive spectral features can be related to structural units of the nanostructures. RAS spectra of Tb and Dy nanostructures are found to show similar features.

  18. Optically probing the detection mechanism in a molybdenum silicide superconducting nanowire single-photon detector

    CERN Document Server

    Caloz, Misael; Timoney, Nuala; Weiss, Markus; Gariglio, Stefano; Warburton, Richard J; Schönenberger, Christian; Renema, Jelmer; Zbinden, Hugo; Bussieres, Felix

    2016-01-01

    We experimentally investigate the detection mechanism in a meandered molybdenum silicide (MoSi) superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750 to 2050 nm. Contrary to some previous observations on niobium nitride (NbN) or tungsten silicide (WSi) detectors, we find that the energy-current relation is nonlinear in this range. Furthermore, thanks to the presence of a saturated detection efficiency over the whole range of wavelengths, we precisely quantify the shape of the curves. This allows a detailed study of their features, which are indicative of both Fano fluctuations and position-dependent effects.

  19. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    DEFF Research Database (Denmark)

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Tim

    2013-01-01

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035°C in an Ar/H2 atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide...... channels, which are aligned with the intersections of the (100) surface of the wafer and the {110} planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission...

  20. Recovery of Scandium from Leachate of Sulfation-Roasted Bayer Red Mud by Liquid-Liquid Extraction

    Science.gov (United States)

    Liu, Zhaobo; Li, Hongxu; Jing, Qiankun; Zhang, Mingming

    2017-11-01

    The leachate obtained from sulfation-roasted Bayer red mud is suitable for extraction of scandium by liquid-liquid solvent extraction because it contains trace amounts of Fe3+ and Si4+. In this study, a completely new metallurgical process for selective recovery of scandium from Bayer red mud was proposed. The extraction performances of Sc3+, Fe3+, Al3+, Si4+, Ca2+, and Na+ from synthetic leachate of sulfation-roasted red mud were first investigated using organophosphorus extractants (di-2-ethylhexyl phosphoric acid P204 and 2-ethylhexyl phosphoric acid mono-2-ethylhexyl ester P507) and carboxylic acid extractant (Versatic acid 10). It shows that P204 has an excellent extraction ability and that it can be applied to the scandium recovery. P507 and Versatic acid 10 are much poorer in performance for selective extraction of scandium. In the leachate of sulfation-roasted red mud, approximately 97% scandium can be recovered using a P204/sulfonated kerosene (1% v/v) extraction system under the condition of an organic-to-aqueous phase ratio of 10:1 and with an extraction temperature of 15°C.

  1. Growth, structure and lattice dynamics of rare earth silicide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Seiler, Anja

    2015-07-13

    In the present thesis the epitaxial growth, crystal structure, stoichiometry, thermal stability and lattice dynamics of self-organized EuSi{sub 2} and DySi{sub 2} films, nanoislands and nanowires are investigated. The rare earth silicide (RESi) nanostructures have attracted considerable interest due to their high conductivity, very low Schottky barrier heights, remarkable chemical stability, self-organization in high area density and defects-free nano-objects with tunable size and shape, and the direct integration into the Si technology. The extensive research is driven by the continuous downscaling of the CMOS electronics that require new approaches in the devices architecture and circuits interconnects. Although RESi nanostructures attracted a lot of interest already several years ago and a lot of research has been done in this field, the lattice dynamics of these materials are still unknown. Recent developments at third generation synchrotron radiation sources have brought their performance to a stage where phonon spectroscopy of nanostructures and thin layers became feasible using nuclear inelastic X-ray scattering. This novel experimental technique is based on the process of phonon-assisted nuclear resonant absorption/emission of X-rays from the nuclei of Moessbauer-active isotopes. The method provides direct access to the phonon density of states (DOS) of the investigated element. Together with the ab initio calculations it was possible to get a comprehensive understanding of the lattice dynamics. EuSi{sub 2} films and nanoislands and DySi{sub 2} films, nanoislands and nanowires have been grown on the vicinal Si(001) surface by molecular beam epitaxy. While DySi{sub 2} was grown following known growth procedures, the growth conditions for EuSi{sub 2} had to be established first. EuSi{sub 2} was grown at two different growth conditions to study the influence of crystal structure and morphology upon different growth temperatures. The structure has been

  2. Water splitting and electricity with semiconducting silicides in sunlight

    Energy Technology Data Exchange (ETDEWEB)

    Demuth, Martin [Max-Planck-Institut fuer Bioanorganische Chemie, Muelheim an der Ruhr (Germany); H2 Solar GmbH, Loerrach (Germany); Kerpen, Klaus; Kuklya, Andriy; Wuestkamp, Marc-Andre [Max-Planck-Institut fuer Kohlenforschung, Muelheim an der Ruhr (Germany)

    2010-07-01

    Generation of hydrogen and oxygen from water is described using mainly the semiconductor titanium disilicide as catalyst and halogen light which closely mimics solar radiation. The reactions are carried out under non-aerobic conditions, i.e., under nitrogen. High efficiencies are reached at 1.1-1.2 bar pressure. In the first phase of these reactions the catalytically active centers are built up. During this phase of reaction the kinetics of the water splitting process is growing in and leads to a linear dependence in the further course of the reactions which consists of >96% water splitting to yield hydrogen and oxygen in a 2:1 ratio. Hydrogen is partially and reversibly stored physically, depending on temperature. Oxygen behaves differently since it is stored entirely under the applied reaction conditions (50-80 C and light) and can be liberated from storage upon heating the slurries in the dark. This allows convenient separation of hydrogen and oxygen. The stability of titanium disilicide has been positively tested over several months. This material is abundant and inexpensive besides that it absorbs most of the solar radiation. Further, XRD and XPS studies show that titanium disilicide is 80% crystalline and the oxide formation is limited to a few molecular layers in depth. By using labeled water it was shown that labeled dioxygen appears in the gas phase of such reactions, this showing definitively that hydrogen evolution occuring here stems from photochemical splitting of water. Further, water splitting is part of a project which involves photoelectrochemistry and in which the silicides are used as light-receiving electrode and transition metal-coated anodes serve to split water. (orig.)

  3. Radiation Re-solution Calculation in Uranium-Silicide Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Matthews, Christopher [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Andersson, Anders David Ragnar [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Unal, Cetin [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-01-27

    The release of fission gas from nuclear fuels is of primary concern for safe operation of nuclear power plants. Although the production of fission gas atoms can be easily calculated from the fission rate in the fuel and the average yield of fission gas, the actual diffusion, behavior, and ultimate escape of fission gas from nuclear fuel depends on many other variables. As fission gas diffuses through the fuel grain, it tends to collect into intra-granular bubbles, as portrayed in Figure 1.1. These bubbles continue to grow due to absorption of single gas atoms. Simultaneously, passing fission fragments can cause collisions in the bubble that result in gas atoms being knocked back into the grain. This so called “re-solution” event results in a transient equilibrium of single gas atoms within the grain. As single gas atoms progress through the grain, they will eventually collect along grain boundaries, creating inter-granular bubbles. As the inter-granular bubbles grow over time, they will interconnect with other grain-face bubbles until a pathway is created to the outside of the fuel surface, at which point the highly pressurized inter-granular bubbles will expel their contents into the fuel plenum. This last process is the primary cause of fission gas release. From the simple description above, it is clear there are several parameters that ultimately affect fission gas release, including the diffusivity of single gas atoms, the absorption and knockout rate of single gas atoms in intra-granular bubbles, and the growth and interlinkage of intergranular bubbles. Of these, the knockout, or re-solution rate has an particularly important role in determining the transient concentration of single gas atoms in the grain. The re-solution rate will be explored in the following sections with regards to uranium-silicide fuels in order to support future models of fission gas bubble behavior.

  4. Impact of laser anneal on NiPt silicide texture and chemical composition

    Energy Technology Data Exchange (ETDEWEB)

    Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

    2017-06-14

    We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

  5. Role of Ti3Al/silicides on tensile properties of Timetal 834 at various ...

    Indian Academy of Sciences (India)

    Extremely fine coherent precipitates of ordered Ti3Al and relatively coarse incoherent precipitates of 2 silicide exist together in the near -titanium alloy, Timetal 834, in the dual phase matrix of primary and transformed . In order to assess the role of these precipitates, three heat treatments viz. WQ, WQ–A and WQ–OA, ...

  6. Effect of pre-treatment and nickel layer thickness on nickel silicide/silicon carbide contact

    Science.gov (United States)

    Cao, Yu; Nyborg, Lars; Jelvestam, Urban; Yi, Danqing

    2005-03-01

    This investigation deals with the impact of pre-treatment and Ni thickness on the reactions of Ni-silicide/SiC contact fabrication. The specimens have been prepared by sputter depositing 3-100 nm Ni layer on 4H-SiC wafer followed by annealing at 800 °C in vacuum for 20 min. The results by means of XPS show as follows: among the chemical cleaning procedures which have been tested, the recipe NH4OH:H2O2:H2O = 1:1:5, 85 °C, 5 min; HF 10%, 80 °C, 2 min; boiling water 10 min is the most effective for SiC substrates. However, due to short time exposure in the air before experiment, certain contamination re-occurs. After annealing, the dominant silicide formed is Ni2Si, whereas C on the surface is graphite. Argon ion etching before the Ni deposition helps the formation of multi-layer structure. For the samples without pre-treatment or with chemical cleaning procedure, there is more C agglomerated at the surface and no multi-layer structure formed. Under the action of Ar ion etching, SiC decomposes more quickly and Ni diffuses faster. This effect together with limited C diffusivity in the formed silicide is a probable reason for the formation of the multi-layer structure. The silicides formed at the interface are dependent on the Ni layer thickness and substrate surface condition.

  7. Waste Photovoltaic Panels for Ultrapure Silicon and Hydrogen through the Low-Temperature Magnesium Silicide.

    Czech Academy of Sciences Publication Activity Database

    Dytrych, Pavel; Bumba, Jakub; Kaštánek, František; Fajgar, Radek; Koštejn, Martin; Šolcová, Olga

    2017-01-01

    Roč. 56, č. 45 (2017), s. 12863-12869 ISSN 0888-5885 R&D Projects: GA ČR GA15-14228S Institutional support: RVO:67985858 Keywords : magnesium silicide * waste photovoltaic panels * ultrapure silicon Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 2.843, year: 2016

  8. High pressure studies on uranium and thorium silicide compounds: Experiment and theory

    DEFF Research Database (Denmark)

    Yagoubi, S.; Heathman, S.; Svane, A.

    2013-01-01

    The actinide silicides ThSi, USi and USi2 have been studied under high pressure using both theory and experiment. High pressure synchrotron X-ray diffraction experiments were performed on polycrystalline samples in diamond anvil cells at room temperature and for pressures up to 54, 52 and 26 GPa,...

  9. The development of titanium silicide - boron doped polysilicon resistive temperature sensors

    NARCIS (Netherlands)

    Vereshchagina, E.; Vereshchagina, E.; Wolters, Robertus A.M.; Gardeniers, Johannes G.E.

    2011-01-01

    Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 ◦C−1, a linear dependence of

  10. Cross-Bridge Kelvin Resistor (CBKR) structures for silicide-semiconductor junctions characterization

    NARCIS (Netherlands)

    Stavitski, N.; van Dal, M.J.H.; Klootwijk, J.H.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2006-01-01

    Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the contact geometries conventionally used for the metal-to-silicide contact resistance measurements were not always satisfactory to reveal the specific contact resistance values. To investigate these

  11. Role of Ti3Al/silicides on tensile properties of Timetal 834 at various ...

    Indian Academy of Sciences (India)

    WINTEC

    conditions. Tensile properties in the above three heat treated conditions were determined at room tempera- ture, 673 K and 873 K. It was observed that largely Ti3Al precipitates were responsible for increase in the yield strength and decrease in ductility in this alloy. Keywords. Near α-titanium alloy; Timetal 834; Ti3Al/silicide ...

  12. Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

    DEFF Research Database (Denmark)

    Han, Li; Christensen, Dennis Valbjørn; Bhowmik, Arghya

    2016-01-01

    Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced...... is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT....

  13. Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth

    Directory of Open Access Journals (Sweden)

    Erchao Meng

    2013-09-01

    Full Text Available The shape modification of Si nanowires is demonstrated using faceted solid silicide catalysts. The Si nanowires were grown on Si(111 substrates covered with Au as a catalyst using MnCl2 and Si powders as source materials. The solid silicide catalysts were nucleated and formed in the Au-Si catalyst solution at the top of the nanowires during the growth. The faceted solid silicides grew larger with increased growth time and played a role as a solid catalyst. The faceted shape of the catalyst defines the shape of the faceted Si nanowire. The squared Si nanowires were grown with the growth direction of Si[111] and the sidewalls of {110} and {211} planes. The growth evolution of the faceted Si nanowires occurs by a vapor-liquid-solid mechanism followed by the silicide vapor-solid-solid mechanism.

  14. Scandium and yttrium phosphasalen complexes as initiators for ring-opening polymerization of cyclic esters.

    Science.gov (United States)

    Bakewell, Clare; White, Andrew J P; Long, Nicholas J; Williams, Charlotte K

    2015-03-02

    The synthesis and characterization of novel scandium and yttrium phosphasalen complexes is reported, where phosphasalen refers to two different bis(iminophosphorane) derivatives of the more ubiquitous salen ligands. The activity of the complexes as initiators for the ring-opening polymerization of cyclic esters is presented. The scandium complexes are inactive for lactide polymerization but slow and controlled initiators for ε-caprolactone polymerization. The lack of activity toward lactide exhibited by these compounds is probed, and a rare example of single-monomer insertion product, unable to undergo further reactions with lactide, is identified. In contrast, the analogous yttrium phosphasalen complex is a very active initiator for the ring-opening polymerization of rac-lactide (kobs = 1.5 × 10(-3) s(-1) at 1:500 [yttrium initiator]:[rac-lactide], 1 M overall concentration of lactide in THF at 298 K). In addition to being a very fast initiator, the yttrium complex also maintains excellent levels of polymerization control and a high degree of isoselectivity, with the probability of isotactic enchainment being Pi = 0.78 at 298 K.

  15. Thermodynamic parameters of scandium trifluoride and triiodide in the condensed state

    Science.gov (United States)

    Aristova, N. M.; Belov, G. V.

    2015-06-01

    The thermodynamic properties of new classes of compounds, particularly scandium trihalides ScF3, ScCl3, ScBr3, and ScI3, are added to the IVTANTHERMO software package. A critical analysis and processing of the entire array of primary data available in the literature is performed. An equation approximating the temperature dependence of heat capacity in the temperature range 298.15- T m (K) is derived for each crystalline scandium trihalide. The resulting equations C {/p po}( T) for the solid state and the data for the liquid phase are used to calculate the thermodynamic functions of entropy, the reduced Gibbs free energies, and the enthalpy increments. Both the experimental data available in literature and the missing estimated thermodynamic data are used in calculations. The error of the recommended values is estimated in all cases. In the first part of this work, we describe the thermodynamic properties of ScF3 and ScI3 used as the reference data for calculating the thermodynamic functions of ScCl3 and ScBr3, for which experimental data are either very scarce or missing altogether. The resulting data are added to the database of the IVTANTHERMO software package.

  16. The effects of Ta on the formation of Ni-silicide in Ni{sub 0.95x}Ta{sub x0.05}/Si systems

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Dongwon [Department of Ceramic Engineering, Yonsei University, Seoul (Korea, Republic of); Do, Kihoon [Department of Ceramic Engineering, Yonsei University, Seoul (Korea, Republic of); Ko, Dae-Hong [Department of Ceramic Engineering, Yonsei University, Seoul (Korea, Republic of)]. E-mail: polymetal@empal.com; Choi, Siyoung [Process Development Team, Semiconductor R and D Division, Samsung Electronics Ltd. (Korea, Republic of); Ku, Ja-Hum [Process Development Team, Semiconductor R and D Division, Samsung Electronics Ltd. (Korea, Republic of); Yang, Cheol-Woong [School of Metallurgical and Materials Engineering, Sungkyunkwan University Suwon (Korea, Republic of)

    2004-12-15

    We investigated a comparative study on the silicide formation in the Ni{sub 0.95}Ta{sub 0.05}/Si alloy systems and Ni/Si systems. Ni and Ni{sub 0.95}Ta{sub 0.05} films were deposited on Si(1 0 0) substrate by DC magnetron sputtering and processed at various silicidation temperatures. The sheet resistance of the silicide from the Ni{sub 0.95}Ta{sub 0.05}/Si alloy systems was obtained at lower values than those in pure Ni/Si systems at any temperature. Using RBS and TEM analyses, we confirmed the presence of a Ta rich layer at the top of the Ni-silicide layer and the presence of small amounts of Ta in the silicide layer. The stability of the silicide layer for the Ni{sub 0.95}Ta{sub 0.05} systems is explained by the presence of the Ta rich layer on top of the Ni-silicide layer, as well as by the presence of the small amount of Ta in the Ni-silicide layer. The Ni-silicide using Ni{sub 0.95}Ta{sub 0.05}/Si system displayed a stable sheet resistance value of {approx}5 {omega}/sq which was maintained during the anneal process at 600 deg. C.

  17. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    Directory of Open Access Journals (Sweden)

    Galkin N.G.

    2017-01-01

    Full Text Available By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  18. Development of a fused slurry silicide coating for the protection of tantalum alloys

    Science.gov (United States)

    Packer, C. M.; Perkins, R. A.

    1974-01-01

    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  19. Effect of Saturation Pressure Difference on Metal–Silicide Nanopowder Formation in Thermal Plasma Fabrication

    Directory of Open Access Journals (Sweden)

    Masaya Shigeta

    2016-03-01

    Full Text Available A computational investigation using a unique model and a solution algorithm was conducted, changing only the saturation pressure of one material artificially during nanopowder formation in thermal plasma fabrication, to highlight the effects of the saturation pressure difference between a metal and silicon. The model can not only express any profile of particle size–composition distribution for a metal–silicide nanopowder even with widely ranging sizes from sub-nanometers to a few hundred nanometers, but it can also simulate the entire growth process involving binary homogeneous nucleation, binary heterogeneous co-condensation, and coagulation among nanoparticles with different compositions. Greater differences in saturation pressures cause a greater time lag for co-condensation of two material vapors during the collective growth of the metal–silicide nanopowder. The greater time lag for co-condensation results in a wider range of composition of the mature nanopowder.

  20. Leakage current and deep levels in CoSi{sub 2} silicided junctions

    Energy Technology Data Exchange (ETDEWEB)

    Codegoni, D. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Carnevale, G.P. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); De Marco, C. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Mica, I. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy); Polignano, M.L. [ST Microelectronics Via Olivetti 2, 20041 Agrate Brianza, Milan (Italy)]. E-mail: marialuisa.polignano@st.com

    2005-12-05

    In this work the leakage current of junctions with a self-aligned cobalt silicide is studied. It is shown that junctions with a self-aligned CoSi{sub 2} layer show a leakage current excess which is strongly reduced by increasing the PAI energy. This indicates that the observed leakage current excess is related to the CoSi{sub 2} formation conditions. The mechanism responsible for the leakage of CoSi{sub 2} junctions is investigated by current versus temperature measurements and by deep level transient spectroscopy. In addition, the role of the mechanical stress is investigated by comparing different isolation structures and by numerical stress calculations. It is concluded that the shallow trench isolation (STI) induced stress and the cobalt silicide formation concur to produce a junction leakage current increase by creating a deep level in silicon located close to midgap. This level can possibly identified with a level ascribed to a point defect excess.

  1. Recovery of Scandium(III) from Aqueous Solutions by Solvent Extraction with the Functionalized Ionic Liquid Betainium Bis(trifluoromethylsulfonyl)imide

    OpenAIRE

    Onghena, Bieke; Binnemans, Koen

    2015-01-01

    The ionic liquid betainium is(trifluoromethylsulfonyl)imide [Hbet][Tf2N] was used for the extraction of scandium from aqueous solutions. The influence of several extraction parameters on the extraction efficiency was investigated, including the initial metal concentration, phase ratio, and pH. The extraction kinetics was examined, and a comparison was made between conventional liquid−liquid extraction and homogeneous liquid−liquid extraction (HLLE). The stoichiometry of the extracted scandium...

  2. Modification mechanism of eutectic silicon in Al–6Si–0.3Mg alloy with scandium

    Energy Technology Data Exchange (ETDEWEB)

    Patakham, Ussadawut [Manufacturing and Systems Engineering Program, Department of Production Engineering, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand); Kajornchaiyakul, Julathep [National Metal and Material Technology Center, National Science and Technology Development Agency, 114 Thailand Science Park, Klong Nueng, Klong Luang, Pathumthani 12120 (Thailand); Limmaneevichitr, Chaowalit, E-mail: chaowalit.lim@kmutt.ac.th [Manufacturing and Systems Engineering Program, Department of Production Engineering, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand)

    2013-10-25

    Highlights: •Morphologies and growth of Sc and Sr-modified eutectic silicon resemble those of dendrites. •Crystal orientation of eutectic aluminum depends on growth characteristics of eutectic silicon. •We report strong evidence of the occurrence of an impurity-induced twinning mechanism. -- Abstract: The modification mechanism of eutectic silicon in Al–6Si–0.3Mg alloy with scandium was studied. The crystallographic orientation relationships between primary dendrites and the eutectic phase of unmodified and modified Al–6Si–0.3 Mg alloys were determined using electron backscatter diffraction (EBSD). The orientation of aluminum modified with scandium in the eutectic phase was different from that of the neighboring primary dendrites. This result implies that eutectic aluminum grows epitaxially from the surrounding primary aluminum dendrites in the unmodified alloy and that eutectic aluminum grows competitively from the surrounding primary aluminum dendrites in the modified alloy. The pole figure maps of eutectic Si in the [1 0 0], [1 1 0] and [1 1 1] axes of the unmodified and Sc-modified alloys were different, suggesting that the eutectic Al and Si crystals in modified alloy growth are more isotropic and cover a larger set of directions. The lattice fringes of Si of the alloys with and without Sc modification were different in the TEM results. The lattice fringes of Si in modified alloy were found to be multiple twins. However, this was not observed in the unmodified alloy. The growth characteristic of eutectic Si crystal in modified alloy suggests the occurrence of multiple twinning reactions and the formation of a high density of twins. This modification mechanism by Sc is explained by the results of scanning electron microscopy (SEM), electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analysis, which provide strong evidence of the occurrence of the impurity-induced twinning (IIT) mechanism.

  3. Grain refinement mechanism in an Al-Si-Mg alloy with scandium

    Energy Technology Data Exchange (ETDEWEB)

    Patakham, Ussadawut [Department of Production Engineering, Faculty of Engineering, King Mongkut' s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand); Kajornchaiyakul, Julathep [National Metal and Material Technology Center, National Science and Technology Development Agency, 114 Thailand Science Park, Klong Nueng, Klong Luang, Pathumthani 12120 (Thailand); Limmaneevichitr, Chaowalit, E-mail: chaowalit.lim@kmutt.ac.th [Department of Production Engineering, Faculty of Engineering, King Mongkut' s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand)

    2012-11-25

    Highlights: Black-Right-Pointing-Pointer Scandium can be used to refine aluminum grains in an Al-Si-Mg aluminum alloy. Black-Right-Pointing-Pointer The effectiveness of Sc is lower than that of conventional Al-Ti grain refiners. Black-Right-Pointing-Pointer Al{sub 3}Sc particles can act as heterogeneous nuclei of aluminum phases. Black-Right-Pointing-Pointer Higher alloying elements cause more intermetallic compound phases. Black-Right-Pointing-Pointer Those phases cannot effectively act as heterogeneous nuclei compared with Al{sub 3}Sc particles. - Abstract: Grain refinement of the primary aluminum ({alpha}-Al) phase in a hypoeutectic Al-Si alloy using scandium (Sc) was studied to identify the grain refinement mechanism. Optical microscopy (OM), Scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) and electron backscatter diffraction (EBSD) techniques were extensively used in this study. We found that Sc refined grains of primary aluminum. However, the grain refinement efficiency of Sc was considerably lower than that of titanium (Ti) in the Al-Si-Mg foundry alloy. It was evident that the precipitated Sc-containing phases acted as heterogeneous nucleation sites for the primary aluminum phase. The Sc-containing heterogeneous sites are irregular in shape with sizes between 3 and 5 {mu}m. At least three groups of nuclei based on their chemical composition were found, i.e., (i) Al and Sc, (ii) Al, Si, Mg, and Sc, and (iii) Al, Si, Mg, Sc, and Fe. Crystal orientation mapping showed primary aluminum dendrites with one orientation in each grain near Al{sub 3}Sc particles. The grain refinement mechanism of Sc for aluminum relies on heterogeneous nucleation of Al{sub 3}Sc particles, with less responsibly for grain growth restriction. Many intermetallic phases with Al, Si, Fe, Mg and Sc as their major components were found, and these phases could not effectively act as heterogeneous nuclei.

  4. Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

    Science.gov (United States)

    Ye, Ning; Feser, Joseph P.; Sadasivam, Sridhar; Fisher, Timothy S.; Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

    2017-02-01

    Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi, and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and nonepitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are nonunity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100 K, the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for

  5. An experimental study of the influence of oxygen on silicide formation with tungsten deposited from tungsten hexafluoride

    Science.gov (United States)

    Zhang, S.-L.; Smith, U.; Buchta, R.; Östling, M.

    1991-01-01

    Tungsten disilicide (WSi2) was formed by annealing tungsten films deposited by low-pressure chemical vapor deposition on -silicon substrates. The influence of oxygen on the silicidation rate was studied. Si wafers with different oxygen content in the form of Czochralski, float-zone, and epitaxial wafers were used. Oxygen was also ion implanted into either the silicon substrate or the as-deposited tungsten film. The Rutherford backscattering technique was used to follow the progress of the silicidation. The silicidation rate was found to be dependent on the oxygen content of the Si substrates. The rate was lowest for Czochralski substrates and highest for float-zone substrates. Secondary ion mass spectroscopy was used to study the oxygen and fluorine profiles in the films prior to and after silicidation. Growth of WSi2 was found to be retarded concurrently with a pile-up of fluorine at the tungsten side of the W/WSi2 interface and a gettering of oxygen from the annealing atmosphere at the interface. Growth of WSi2 was then transferred to the tungsten surface. Oxygen implantation into silicon and tungsten, respectively, reduced the rate of silicide formation. Oxygen implantation into tungsten altered the distribution of fluorine and suppressed WSi2 growth at the tungsten surface. The observations led to a conceptual model, which ascribes the retardation in the growth of the inner WSi2 to a``poisoning'' effect caused by the increase of oxygen and fluorine levels at the interface.

  6. Neutron and Charged-Particle Induced Cross Sections for Radiochemistry for Isotopes of Scandium, Titanium, Vanadium, Chromium, Manganese, and Iron

    Energy Technology Data Exchange (ETDEWEB)

    Kelley, K; Hoffman, R D; Dietrich, F S; Bauer, R; Mustafa, M

    2004-11-30

    We have developed a set of modeled nuclear reaction cross sections for use in radiochemical diagnostics. Local systematics for the input parameters required by the Hauser-Feshbach statistical model were developed and used to calculate neutron and proton induced nuclear reaction cross sections in the mass region of scandium, titanium, vanadium, chromium, manganese, and iron (21 {le} Z {le} 26, 20 {le} N {le} 32).

  7. A composite cathode based on scandium doped titanate with enhanced electrocatalytic activity towards direct carbon dioxide electrolysis.

    Science.gov (United States)

    Yang, Liming; Xie, Kui; Wu, Lan; Qin, Qingqing; Zhang, Jun; Zhang, Yong; Xie, Ting; Wu, Yucheng

    2014-10-21

    A composite cathode based on redox-stable La0.2Sr0.8TiO(3+δ) (LSTO) can perform direct carbon dioxide electrolysis; however, the insufficient electro-catalytic activity limits the electrode performances and current efficiencies. In this work, catalytically active scandium is doped into LSTO to enhance the electro-catalytic activity for CO2 electrolysis. The structures, electronic conductivities and ionic conductivities of La0.2Sr0.8Ti(1-x)Sc(x)O (LSTS(x)O) (x = 0, 0.05, 0.1, 0.15 and 0.2) are systematically studied and further correlated with electrode performances. The ionic conductivities of single-phase LSTS(x)O (x = 0, 0.05, 0.1 and 0.15) remarkably improve versus the scandium doping contents though the electrical conductivities gradually change in an adverse trend. Electrochemical measurements demonstrate promising electrode polarisation of LSTS(x)O electrodes and increasing scandium doping contents accordingly improve electrode performances. The Faradic efficiencies of carbon dioxide electrolysis are enhanced by 20% with LSTS0.15O in contrast to bare LSTO electrodes in a solid oxide electrolyser at 800 °C.

  8. Probing Transition-Metal Silicides as PGM-Free Catalysts for Hydrogen Oxidation and Evolution in Acidic Medium

    Science.gov (United States)

    Mittermeier, Thomas; Madkikar, Pankaj; Wang, Xiaodong; Gasteiger, Hubert A.; Piana, Michele

    2017-01-01

    In this experimental study, we investigate various transition-metal silicides as platinum-group-metal-(PGM)-free electrocatalysts for the hydrogen oxidation reaction (HOR), and for the hydrogen evolution reaction (HER) in acidic environment for the first time. Using cyclic voltammetry in 0.1 M HClO4, we first demonstrate that the tested materials exhibit sufficient stability against dissolution in the relevant potential window. Further, we determine the HOR and HER activities for Mo, W, Ta, Ni and Mo-Ni silicides in rotating disk electrode experiments. In conclusion, for the HOR only Ni2Si shows limited activity, and the HER activity of the investigated silicides is considerably lower compared to other PGM-free HER catalysts reported in the literature. PMID:28773022

  9. Temperature and Stress Simulation of 4H-SiC during Laser-Induced Silicidation for Ohmic Contact Generation

    Directory of Open Access Journals (Sweden)

    Benedikt Adelmann

    2017-12-01

    Full Text Available We report here on the simulation of temperature and stress evolution of 4H-SiC during laser-induced silicidation to locally generate ohmic contacts between the semiconductor and nickel metallization. The simulation is based on optical free carrier absorption, thermal conduction, and thermal radiation. Our results show that, during laser irradiation, similar temperatures and correspondingly similar contact resistances, as compared to conventional oven-driven annealing processes, are achievable, yet with the advantageous potential to limit the temperature treatment spatially to the desired regions for electrical contacts and without the necessity of heating complete wafers. However, due to temperature gradients during local laser silicidation, thermal induced stress appears, which may damage the SiC wafer. Based on the simulated results for temperature and stress increase, we identify an optimized regime for laser-induced local silicidation and compare it to experimental data and observations.

  10. Intercalation synthesis of graphene-capped iron silicide atop Ni(111): Evolution of electronic structure and ferromagnetic ordering

    Energy Technology Data Exchange (ETDEWEB)

    Grebenyuk, G.S. [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Vilkov, O.Yu.; Rybkin, A.G. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); Gomoyunova, M.V. [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Senkovskiy, B.V. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); II. Physikalisches Institut, Universität zu Köln, D-50937 Cologne (Germany); Usachov, D.Yu. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); Vyalikh, D.V. [St. Petersburg State University, 199034 St. Petersburg (Russian Federation); Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden (Germany); Molodtsov, S.L. [European XFEL GmbH, 22761 Hamburg (Germany); Institute of Experimental Physics, Technische Universität Bergakademie Freiberg, 09599 Freiberg (Germany); ITMO University, 197101 St. Petersburg (Russian Federation); Pronin, I.I., E-mail: Igor.Pronin@mail.ioffe.ru [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); ITMO University, 197101 St. Petersburg (Russian Federation)

    2017-01-15

    Highlights: • Evolution of Graphene/Ni system due to intercalation with Fe and Si is studied. • Graphene strongly interacts with the topmost atoms of the intercalated fcc Fe film. • The in-plane ferromagnetic ordering of the film arises after intercalation of 5 ML Fe. • Fe-Si solid solution and Fe{sub 3}Si surface silicide are formed after intercalation of Si. • The capping graphene layer is weakly electronically coupled to the silicide phase. - Abstract: A new method for synthesis of graphene-protected iron silicides has been tested, which consists in formation of graphene on Ni(111) followed by two-step intercalation of the system with Fe and Si. Characterization of the samples was performed in situ by low-energy electron diffraction, angular-resolved photoelectron spectroscopy, core-level photoelectron spectroscopy with synchrotron radiation and magnetic linear dichroism in photoemission of Fe 3p electrons. It is shown, that at 400 °C the intercalation of graphene/Ni(111) with iron occurs in a range up to 14 ML. The graphene layer strongly interacts with the topmost Fe atoms and stabilizes the fcc structure of the film. The in-plane ferromagnetic ordering of the film has a threshold nature and arises after the intercalation of 5 ML Fe due to the thickness-driven spin reorientation transition. Subsequent intercalation of graphene/Fe/Ni(111) with Si leads to the formation of the inhomogeneous system consisted of intercalated and nonintercalated areas. The intercalated islands coalesce at 2 ML Si when a Fe-Si solid solution covered with the Fe{sub 3}Si surface silicide is formed. The Fe{sub 3}Si silicide is ferromagnetic and has an ordered (√3 × √3)R30° structure. The graphene layer is weakly electronically coupled to the silicide phase keeping its remarkable properties ready for use.

  11. Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111)

    Science.gov (United States)

    Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.

    2005-06-01

    Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

  12. Combustion synthesis of molybdenum silicides and borosilicides for ultrahigh-temperature structural applications

    Science.gov (United States)

    Alam, Mohammad Shafiul

    Molybdenum silicides and borosilicides are promising structural materials for gas-turbine power plants. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. For example, molybdenum disilicide (MoSi2) has excellent oxidation resistance and poor mechanical properties, while Mo-rich silicides such as Mo5Si3 (called T 1) have much better mechanical properties but poor oxidation resistance. One approach is based on the fabrication of MoSi2-T 1 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of T1. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, Mo 5SiB2 (called T2) phase is considered as an attractive material. In the thesis, MoSi2-T1 composites and materials based on T2 phase are obtained by mechanically activated SHS. Use of SHS compaction (quasi-isostatic pressing) significantly improves oxidation resistance of the obtained MoSi2-T1 composites. Combustion of Mo-Si-B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of molybdenum boride. These mixtures exhibit spin combustion, the characteristics of which are in good agreement with the spin combustion theory. Oxidation resistance of the obtained Mo-Si-B materials is independent on the concentration of Mo phase in the products so that the materials with a higher Mo content are preferable because of better mechanical properties. Also, T2 phase has been obtained by the chemical oven combustion synthesis technique.

  13. X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S.; Solak, H.; Cerrina, F. [Univ. of Wisconsin-Madison, Stoughton, WI (United States)] [and others

    1997-04-01

    Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.

  14. In situ, real-time characterization of silicide nanostructure coarsening dynamics by photo-electron emission microscopy

    Science.gov (United States)

    Zeman, Matthew Casimir

    Photo-electron emission microscopy (PEEM) was used to observe the growth and coarsening dynamics of transition metal (TM) silicide and rare earth (RE) silicide nanostructures on silicon surfaces in real-time with high lateral resolution during in situ annealing. Evidence was obtained indicating that the coarsening of the silicide islands is strongly influenced by local variations in the size, shape, and number of nanostructures on the surface. The titanium, hafnium, and zirconium silicide nanostructures were observed to grow via Ostwald ripening and attractive migration and coalescence (AMC) at temperatures as high as ~1200°C. Ostwald ripening is a classic coarsening process in which larger nanostructures grow at the expense of smaller surrounding structures as per the Gibbs-Thompson relation. Attractive migration and coalescence is a newly discovered coarsening pathway where nearby islands are observed to migrate attractively towards each other and subsequently coalesce in response to local adatom concentration variations on the surface. A shape distortion of the normally compact and rounded TM silicide islands has been observed during these coarsening processes. The shape distortion suggests that the nanostructures are exchanging mass with each other via diffusion limited processes and these observations support the AMC model. The dysprosium and erbium silicide nanostructures exhibit a distinct faceted morphology and primarily coarsen via Ostwald ripening. The RE silicides form highly elongated nanowires and compact rectangular nanostructures on Si(001) and triangular or hexagonal structures on Si(111). We show that the wires are metastable structures which decay in favor of the larger rectangular islands at high temperatures. Additionally, the rectangular shape and faceted morphology of the RE silicide nanostructures strongly influences their coarsening dynamics. A separate PEEM study explored the thermal stability of thin films of TM oxides (TiO2, ZrO2, HfO2

  15. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.

    2016-11-30

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  16. Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation mode

    CSIR Research Space (South Africa)

    Pretorius, R

    1993-11-01

    Full Text Available stream_source_info pretorius_1993.pdf.txt stream_content_type text/plain stream_size 39978 Content-Encoding ISO-8859-1 stream_name pretorius_1993.pdf.txt Content-Type text/plain; charset=ISO-8859-1 Materials Chemistry... and Physics, 36 (1993) 31-38 31 Evaluation of anomalies during nickel and titanium silicide formation using the effective heat of formation model R. Pretorius, C.C. Theron IonSolid Znteraction Division, Van de H.A. Ras and T...

  17. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Fatima,; Hossain, Sehtab; Mohottige, Rasika; Oncel, Nuri, E-mail: gulseren@fen.bilkent.edu.tr, E-mail: nuri.oncel@und.edu [Department of Physics and Astrophysics, University of North Dakota, Grand Forks, North Dakota 58202 (United States); Can Oguz, Ismail; Gulseren, Oguz, E-mail: gulseren@fen.bilkent.edu.tr, E-mail: nuri.oncel@und.edu [Department of Physics, Bilkent University, Ankara (Turkey); Çakır, Deniz [Department of Physics, University of Antwerp, Antwerp 2610 (Belgium)

    2016-09-07

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  18. Adsorption of hydrogen in Scandium/Titanium decorated nitrogen doped carbon nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Mananghaya, Michael, E-mail: mikemananghaya@gmail.com [De La Salle University, 2401 Taft Ave, 0922, Manila (Philippines); DLSU STC Laguna Boulevard, LTI Spine Road Barangays Biñan and Malamig, Biñan City, Laguna (Philippines); DOST-ASTHRDP, PCIEERD, Gen. Santos Ave., Bicutan, Taguig City 1631 (Philippines); Belo, Lawrence Phoa; Beltran, Arnel [De La Salle University, 2401 Taft Ave, 0922, Manila (Philippines); DLSU STC Laguna Boulevard, LTI Spine Road Barangays Biñan and Malamig, Biñan City, Laguna (Philippines)

    2016-09-01

    Nitrogen doped Carbon Nanotube with divacancy (4ND-CN{sub x}NT) that is decorated with Scandium and Titanium as potential hydrogen storage medium using the pseudo potential density functional method was investigated. Highly localized states near the Fermi level, which are derived from the nitrogen defects, contribute to strong Sc and Ti bindings, which prevent metal aggregation and improve the material stability. A detailed Comparison of the Hydrogen adsorption capability with promising system-weight efficiency of Sc over Ti was elucidated when functionalized with 4ND-CN{sub x}NT. Finally, the (Sc/4ND){sub 10}-CN{sub x}CNT composite material has a thermodynamically favorable adsorption and consecutive adsorption energy for ideal reversible adsorption and desorption of hydrogen at room temperature such that it can hold at least 5.8 wt% hydrogen molecules at the LDA and GGA level. - Highlights: • Carbon Nanotube with divacancy (4ND-CN{sub x}NT) decorated with Sc and Ti. • Nitrogen defects, contribute to strong Sc and Ti bindings. • H{sub 2} and (Sc/4ND){sub 10}-CN{sub x}CNT has a favorable adsorption. • 5.8 wt% adsorption at the LDA and GGA level.

  19. Urinary monitoring of exposure to yttrium, scandium, and europium in male Wistar rats.

    Science.gov (United States)

    Kitamura, Yasuhiro; Usuda, Kan; Shimizu, Hiroyasu; Fujimoto, Keiichi; Kono, Rei; Fujita, Aiko; Kono, Koichi

    2012-12-01

    On the assumption that rare earth elements (REEs) are nontoxic, they are being utilized as replacements of toxic heavy metals in novel technological applications. However, REEs are not entirely innocuous, and their impact on health is still uncertain. In the past decade, our laboratory has studied the urinary excretion of REEs in male Wistar rats given chlorides of europium, scandium, and yttrium solutions by one-shot intraperitoneal injection or oral dose. The present paper describes three experiments for the suitability and appropriateness of a method to use urine for biological monitoring of exposure to these REEs. The concentrations of REEs were determined in cumulative urine samples taken at 0-24 h by inductively coupled plasma atomic emission spectroscopy, showing that the urinary excretion of REEs is <2 %. Rare earth elements form colloidal conjugates in the bloodstream, which make high REEs accumulation in the reticuloendothelial system and glomeruli and low urinary excretion. The high sensitivity of inductively coupled plasma-argon emission spectrometry analytical methods, with detection limits of <2 μg/L, makes urine a comprehensive assessment tool that reflects REE exposure. The analytical method and animal experimental model described in this study will be of great importance and encourage further discussion for future studies.

  20. Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

    KAUST Repository

    Bahabry, Rabab R

    2018-01-11

    The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

  1. Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B. [Brimrose Technology Corporation; Kutcher, Susan W. [Brimrose Technology Corporation; Rosemeier, Cory A. [Brimrose Technology Corporation; Mayers, David [Brimrose Technology Corporation; Singh, Jogender [Pennsylvania State University

    2013-12-02

    Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

  2. Silicon-germanium and platinum silicide nanostructures for silicon based photonics

    Science.gov (United States)

    Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

    2017-05-01

    This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

  3. Preparation and properties of sputtered nitrogen-doped cobalt silicide film

    Energy Technology Data Exchange (ETDEWEB)

    Ting, J.-H.; Shiau, S.-H.; Chen, Y.-J.; Pan, F.-M.; Wong Harianto; Pu, Gibson M.; Kung, C.-Y

    2004-12-01

    It is the purpose of this study to develop tough hinge material for the application of the torsional springs. Nitrogen-doped cobalt silicide (CoSi{sub x}N{sub y}) film is sputtered from cobalt silicide (CoSi{sub 2}) target in Ar/N{sub 2} discharge. Stress and sheet resistance of CoSi{sub x}N{sub y} film are two major properties to be evaluated. Taguchi method is practiced in reactive sputtering deposition of CoSi{sub x}N{sub y} film. Process pressure is most critical to the CoSi{sub x}N{sub y} film stress and the optimum condition of 1000 W, 0.8 Pa, and 20% N{sub 2} flow ratio, indeed results in low tensile CoSi{sub x}N{sub y} film stress, about 54. MPa. Reannealing process indicates that stability of CoSi{sub x}N{sub y} film is attained after first annealing process. Stress hysteresis behaviors of CoSi{sub x} and CoSi{sub x}N{sub y} films resemble that of metal film with a complete elastic manner in the second stage of heating and cooling. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses suggest that toughness and strength of the film is achievable. It is concluded that CoSi{sub x}N{sub y} film as a hinge material is feasible.

  4. Prediction of Stable Ruthenium Silicides from First-Principles Calculations: Stoichiometries, Crystal Structures, and Physical Properties.

    Science.gov (United States)

    Zhang, Chuanzhao; Kuang, Xiaoyu; Jin, Yuanyuan; Lu, Cheng; Zhou, Dawei; Li, Peifang; Bao, Gang; Hermann, Andreas

    2015-12-09

    We present results of an unbiased structure search for stable ruthenium silicide compounds with various stoichiometries, using a recently developed technique that combines particle swarm optimization algorithms with first-principles calculations. Two experimentally observed structures of ruthenium silicides, RuSi (space group P2(1)3) and Ru2Si3 (space group Pbcn), are successfully reproduced under ambient pressure conditions. In addition, a stable RuSi2 compound with β-FeSi2 structure type (space group Cmca) was found. The calculations of the formation enthalpy, elastic constants, and phonon dispersions demonstrate the Cmca-RuSi2 compound is energetically, mechanically, and dynamically stable. The analysis of electronic band structures and densities of state reveals that the Cmca-RuSi2 phase is a semiconductor with a direct band gap of 0.480 eV and is stabilized by strong covalent bonding between Ru and neighboring Si atoms. On the basis of the Mulliken overlap population analysis, the Vickers hardness of the Cmca structure RuSi2 is estimated to be 28.0 GPa, indicating its ultra-incompressible nature.

  5. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    Energy Technology Data Exchange (ETDEWEB)

    Cols, H.; Cristini, P.; Marques, R.

    1997-08-01

    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  6. Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI

    Science.gov (United States)

    Hess, D. W.

    1986-05-01

    Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

  7. Two-dimensional electronic structure of dysprosium silicide nanowires on Si(557)

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina; Loeser, Karolin; Pruskil, Gerd; Daehne, Mario [Institute of Solid State Physics, Technical University Berlin (Germany); Stojanov, Petar; Huwald, Eric; Riley, John [School of Physics, La Trobe University, Bundoora, VIC (Australia)

    2008-07-01

    Rare earth silicide nanostructures are of high interest because of their extremely low Schottky barriers on n-Si(111) and the formation of nanowires with one-dimensional metallicity on Si(001). In this work, the self-organized growth of monolayer-thick dysprosium silicide nanowires on Si(557) has been studied by scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy. The bare Si(557) surface is characterized by (111) and (112) facets. Accordingly, we observed the nanowires forming on the (111) facets. For coverages of 2A dysprosium, nanowire lengths exceeding 1{mu}m and widths around 5 nm were found. Their electronic structure shows a strong dispersion both parallel and perpendicular to the nanowires, which is assigned to the band structure of DySi{sub 2} monolayers on Si(111). At higher coverages similar nanowires are observed at the (111) facets, which show characteristic structural properties of the multilayer growth and also the Dy{sub 3}Si{sub 5} multilayer band structure.

  8. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

    Science.gov (United States)

    2013-01-01

    This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

  9. Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

    Energy Technology Data Exchange (ETDEWEB)

    Dotsenko, S.A. [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Physics Dpt., 8 Sukhanova Str., Vladivostok 690950 (Russian Federation); Gouralnik, A.S., E-mail: fungoeson@mail.ru [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Galkin, N.G. [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, Physics Dpt., 8 Sukhanova Str., Vladivostok 690950 (Russian Federation); Galkin, K.N. [Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041 (Russian Federation); Gutakovski, A.K.; Neklyudova, M.A. [Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, Lavrentiev Av., Novosibirsk (Russian Federation)

    2014-12-15

    Growth of Mg film on amorphous Si (a-Si) at room temperature in UHV conditions was studied in situ with optical differential reflection spectroscopy and electron energy loss spectroscopy. The phase composition of the film was also studied by high-resolution transmission electron microscopy. The mechanism of silicide film growth on a-Si is considered. The origin of internal stress within the growing film and its role in the silicide film growth process are discussed. Due to high pressure occurring within the growing film, the first phase to form is the hexagonal silicide phase h-Mg{sub 2}Si. According to the DRS data, the phase h-Mg{sub 2}Si is semiconducting. The new peak in the differential reflectance spectrum is assigned to the h-Mg{sub 2}Si. At later stages of Mg deposition the cubic silicide phase c-Mg{sub 2}Si grows. - Highlights: • The film growth by UHV deposition of Mg on amorphous Si layer was studied. • Two Mg{sub 2}Si phases, hexagonal and cubic, were formed on amorphous Silicon. • The metastable h-Mg{sub 2}Si forms first, due to very high stress inside the film. • The stress is induced by chemical forces during intermixing of Mg with Si. • The film growth stages are clearly seen by Differential Reflectance Spectroscopy.

  10. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  11. Understanding and Improving High-Temperature Structural Properties of Metal-Silicide Intermetallics

    Energy Technology Data Exchange (ETDEWEB)

    Bruce S. Kang

    2005-10-10

    The objective of this project was to understand and improve high-temperature structural properties of metal-silicide intermetallic alloys. Through research collaboration between the research team at West Virginia University (WVU) and Dr. J.H. Schneibel at Oak Ridge National Laboratory (ORNL), molybdenum silicide alloys were developed at ORNL and evaluated at WVU through atomistic modeling analyses, thermo-mechanical tests, and metallurgical studies. In this study, molybdenum-based alloys were ductilized by dispersing MgAl2O4 or MgO spinel particles. The addition of spinel particles is hypothesized to getter impurities such as oxygen and nitrogen from the alloy matrix with the result of ductility improvement. The introduction of fine dispersions has also been postulated to improve ductility by acting as a dislocation source or reducing dislocation pile-ups at grain boundaries. The spinel particles, on the other hand, can also act as local notches or crack initiation sites, which is detrimental to the alloy mechanical properties. Optimization of material processing condition is important to develop the desirable molybdenum alloys with sufficient room-temperature ductility. Atomistic analyses were conducted to further understand the mechanism of ductility improvement of the molybdenum alloys and the results showed that trace amount of residual oxygen may be responsible for the brittle behavior of the as-cast Mo alloys. For the alloys studied, uniaxial tensile tests were conducted at different loading rates, and at room and elevated temperatures. Thermal cycling effect on the mechanical properties was also studied. Tensile tests for specimens subjected to either ten or twenty thermal cycles were conducted. For each test, a follow-up detailed fractography and microstructural analysis were carried out. The test results were correlated to the size, density, distribution of the spinel particles and processing time. Thermal expansion tests were carried out using thermo

  12. Chemical vapour deposition of tungsten and tungsten silicide layers for applications in novel silicon technology

    CERN Document Server

    Li, F X

    2002-01-01

    This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tungsten silicide for potential applications in integrated circuit (IC) and other microelectronic devices. These materials may find novel applications in contact schemes for transistors in advanced ICs, buried high conductivity layers in novel Silicon-On-Insulator (SOI) technology and in power electronic devices. The CVD techniques developed may also be used for metal coating of recessed or enclosed features which may occur in novel electronic or electromechanical devices. CVD of tungsten was investigated using the silicon reduction reaction of WF sub 6. W layers with an optimum self-limiting thickness of 100 nm and resistivity 20 mu OMEGA centre dot cm were produced self-aligned to silicon. A hydrogen passivation technique was developed as part of the wafer pre-clean schedule and proved essential in achieving optimum layer thickness. Layers produced by this approach are ideal for intimate contact to shallow junct...

  13. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    Science.gov (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-07-14

    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  14. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2017-12-19

    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  15. Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

    Science.gov (United States)

    Brainard, W. A.; Wheeler, D. R.

    1978-01-01

    The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

  16. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

    Science.gov (United States)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-08-11

    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  17. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2017-06-06

    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  18. Discovery of Brownleeite: a New Manganese Silicide Mineral in an Interplanetary Dust Particle

    Science.gov (United States)

    Keller, Lindsay P.; Nakamura-Messenger, Keiko; Clemett, Simon J.; Messenger, Scott; Jones, John H.; Palma, Russell L.; Pepin, Robert O.; Klock, Wolfgang; Zolensky, Michael E.; Tatsuoka, Hirokazu

    2011-01-01

    The Earth accretes approximately 40,000 tons of cosmic dust annually, originating mainly from the disintegration of comets and collisions among asteroids. This cosmic dust, also known as interplanetary dust particles (IDPs), is a subject of intense interest since it is made of the original building blocks of our Solar System. Although the specific parent bodies of IDPs are unknown, the anhydrous chondritic-porous IDPs (CP-IDPs) subset has been potentially linked to a cometary source. The CP-IDPs are extremely primitive materials based on their unequilibrated mineralogy, C-rich chemistry, and anomalous isotopic signatures. In particular, some CP-IDPs escaped the thermal, aqueous and impact shock processing that has modified or destroyed the original mineralogy of meteorites. Thus, the CP-IDPs represent some of the most primitive solar system materials available for laboratory study. Most CP-IDPs are comprised of minerals that are common on Earth. However, in the course of an examination of one of the CP-IDPs, we encountered three sub-micrometer sized grains of manganese silicide (MnSi), a phase that has heretofore not been found in nature. In the seminar, we would like to focus on IDP studies and this manganese silicide phase that has been approved as the first new mineral identified from a comet by the International Mineralogical Association (IMA) in 2008. The mineral is named in honour of Donald E. Brownlee, an American astronomer and a founder of the field of cosmic dust research who is the principal investigator of the NASA Stardust Mission that collected dust samples from Comet 81P/Wild-2 and returned them to Earth. Much of our current view and understanding of the early solar system would not exist without the pioneering work of professor Don Brownlee in the study of IDPs.

  19. Characterisation of amorphous molybdenum silicide (MoSi) superconducting thin films and nanowires

    Science.gov (United States)

    Banerjee, Archan; Baker, Luke J.; Doye, Alastair; Nord, Magnus; Heath, Robert M.; Erotokritou, Kleanthis; Bosworth, David; Barber, Zoe H.; MacLaren, Ian; Hadfield, Robert H.

    2017-08-01

    We report on the optimisation of amorphous molybdenum silicide thin film growth for superconducting nanowire single-photon detector (SNSPD) applications. Molybdenum silicide was deposited via co-sputtering from Mo and Si targets in an Ar atmosphere. The superconducting transition temperature (T c) and sheet resistance (R s) were measured as a function of thickness and compared to several theoretical models for disordered superconducting films. Superconducting and optical properties of amorphous materials are very sensitive to short- (up to 1 nm) and medium-range order (˜1-3 nm) in the atomic structure. Fluctuation electron microscopy studies showed that the films assumed an A15-like medium-range order. Electron energy loss spectroscopy indicates that the film stoichiometry was close to Mo83Si17, which is consistent with reports that many other A15 structures with the nominal formula A 3 B show a significant non-stoichiometry with A:B > 3:1. Optical properties from ultraviolet (270 nm) to infrared (2200 nm) wavelengths were measured via spectroscopic ellipsometry for 5 nm thick MoSi films indicating high long wavelength absorption. We also measured the current density as a function of temperature for nanowires patterned from a 10 nm thick MoSi film. The current density at 3.6 K is 3.6 × 105 A cm-2 for the widest wire studied (2003 nm), falling to 2 × 105 A cm-2 for the narrowest (173 nm). This investigation confirms the excellent suitability of MoSi for SNSPD applications and gives fresh insight into the properties of the underlying materials.

  20. Selective recovery of vanadium and scandium by ion exchange with D201 and solvent extraction using P507 from hydrochloric acid leaching solution of red mud.

    Science.gov (United States)

    Zhu, Xiaobo; Li, Wang; Tang, Sen; Zeng, Majian; Bai, Pengyuan; Chen, Lunjian

    2017-05-01

    D201 resin and P507 extractant diluted with sulfonated kerosene were used to respectively separate vanadium and scandium, and impurity ions from hydrochloric acid leaching solution of red mud. More than 99% of vanadium was selectively adsorbed from the hydrochloric acid leaching solution under the conditions of pH value of 1.8, volume ratio of leaching solution to resin of 10, and flow rate of 3.33 mL/min. Maximum extraction and separation of scandium was observed from the acid leaching solution at an aqueous pH value of 0.2. More than 99% of scandium can be selectively extracted using 15% P507, 5% TBP at the aqueous solution/organic phase (A/O) ratio of 10:1 for 6 min. The loaded organic phase was washed with 0.3 mol/L sulfuric acid, wherein most impurities were removed. After the process of desorption or stripping, precipitation, and roasting, high-purity V2O5 and Sc2O3 were obtained. Finally, a conceptual flow sheet was established to separate and recover vanadium and scandium from red mud hydrochloric acid leaching solution. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.

    Science.gov (United States)

    Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

    2013-06-07

    Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.

  2. Electronic structures of platinum group elements silicides calculated by a first-principle pseudopotential method using plane-wave basis

    Energy Technology Data Exchange (ETDEWEB)

    Imai, Y. [National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 5, Higashi 1-1 Tsukuba, Ibaraki 305-8565 (Japan); Watanabe, A. [National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 5, Higashi 1-1 Tsukuba, Ibaraki 305-8565 (Japan)

    2006-06-29

    The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

  3. High Temperature Silicides and Refractory Alloys Symposium Held in Boston, Massachusetts on November 29 -December 2, 1993. Volume 322

    Science.gov (United States)

    1993-12-02

    MECHANICAL BEHAVIOR OF Nb-Ti BASE BETA + SILICIDE ALLOYS . ................................... 491 P.R. Subramanian, M.G. Mendiratta, and D.M. Dimiduk...above -1300°C, the amorphous silica can transform to a- cristobalite . The oxygen diffusivity will change as the structure of the silica changes, and...first 10 to 40 hours. After 100 hours of oxidation, the XRD analysis shows that the oxide layer is cristobalite , the stable crystalline phase of silica

  4. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-01-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

  5. Evaluation of powder metallurgical processing routes for multi-component niobium silicide-based high-temperature alloys

    Energy Technology Data Exchange (ETDEWEB)

    Seemueller, Hans Christoph Maximilian

    2016-03-22

    Niobium silicide-based composites are potential candidates to replace nickel-base superalloys for turbine applications. The goal of this work was to evaluate the feasibility and differences in ensuing properties of various powder metallurgical processing techniques that are capable of manufacturing net-shape turbine components. Two routes for powder production, mechanical alloying and gas atomization were combined with compaction via hot isostatic pressing and powder injection molding.

  6. Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

    Science.gov (United States)

    Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

    2017-01-01

    Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

  7. Pack cementation Cr-Al coating of steels and Ge-doped silicide coating of Cr-Nb alloy

    Energy Technology Data Exchange (ETDEWEB)

    He, Y.R.; Zheng, M.H.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States)

    1995-08-01

    Carbon steels or low-alloy steels used in utility boilers, heat exchangers, petrochemical plants and coal gasification systems are subjected to high temperature corrosion attack such as oxidation, sulfidation and hot corrosion. The pack cementation coating process has proven to be an economical and effective method to enhance the corrosion resistance by modifying the surface composition of steels. With the aid of a computer program, STEPSOL, pack cementation conditions to produce a ferrite Cr-Al diffusion coating on carbon-containing steels by using elemental Cr and Al powders have been calculated and experimentally verified. The cyclic oxidation kinetics for the Cr-Al coated steels are presented. Chromium silicide can maintain high oxidation resistance up to 1100{degrees}C by forming a SiO{sub 2} protective scale. Previous studies at Ohio State University have shown that the cyclic oxidation resistance of MOSi{sub 2} and TiSi{sub 2} can be further improved by Ge addition introduced during coating growth. The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating in a single processing step for the ORNL-developed Cr-Nb advanced intermetallic alloy. The oxidation behavior of the silicide-coated Cr-Nb alloy was excellent: weight gain of about 1 mg/cm{sup 2} upon oxidation at 1100{degrees}C in air for 100 hours.

  8. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States); Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States); Mei, Zhigang [Argonne National Lab. (ANL), Argonne, IL (United States); Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States); Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-12-10

    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  9. Random-field Potts model for the polar domains of lead magnesium niobate and lead scandium tantalate

    Energy Technology Data Exchange (ETDEWEB)

    Qian, H.; Bursill, L.A

    1997-06-01

    A random filed Potts model is used to establish the spatial relationship between the nanoscale distribution of charges chemical defects and nanoscale polar domains for the perovskite-based relaxor materials lead magnesium niobate (PMN) and lead scandium tantalate (PST). The random fields are not set stochastically but are determined initially by the distribution of B-site cations (Mg, Nb) or (Sc, Ta) generated by Monte Carlo NNNI-model simulations for the chemical defects. An appropriate random field Potts model is derived and algorithms developed for a 2D lattice. It is shown that the local fields are strongly correlated with the chemical domain walls and that polar domains as a function of decreasing temperature is simulated for the two cases of PMN and PST. The dynamics of the polar clusters is also discussed. 33 refs., 9 figs.

  10. Large-format platinum silicide microwave kinetic inductance detectors for optical to near-IR astronomy.

    Science.gov (United States)

    Szypryt, P; Meeker, S R; Coiffard, G; Fruitwala, N; Bumble, B; Ulbricht, G; Walter, A B; Daal, M; Bockstiegel, C; Collura, G; Zobrist, N; Lipartito, I; Mazin, B A

    2017-10-16

    We have fabricated and characterized 10,000 and 20,440 pixel Microwave Kinetic Inductance Detector (MKID) arrays for the Dark-speckle Near-IR Energy-resolved Superconducting Spectrophotometer (DARKNESS) and the MKID Exoplanet Camera (MEC). These instruments are designed to sit behind adaptive optics systems with the goal of directly imaging exoplanets in a 800-1400 nm band. Previous large optical and near-IR MKID arrays were fabricated using substoichiometric titanium nitride (TiN) on a silicon substrate. These arrays, however, suffered from severe non-uniformities in the TiN critical temperature, causing resonances to shift away from their designed values and lowering usable detector yield. We have begun fabricating DARKNESS and MEC arrays using platinum silicide (PtSi) on sapphire instead of TiN. Not only do these arrays have much higher uniformity than the TiN arrays, resulting in higher pixel yields, they have demonstrated better spectral resolution than TiN MKIDs of similar design. PtSi MKIDs also do not display the hot pixel effects seen when illuminating TiN on silicon MKIDs with photons with wavelengths shorter than 1 µm.

  11. Formation of the Thermoelectric Candidate Chromium Silicide by Use of a Pack-Cementation Process

    Science.gov (United States)

    Stathokostopoulos, D.; Chaliampalias, D.; Tarani, E.; Theodorakakos, A.; Giannoulatou, V.; Polymeris, G. S.; Pavlidou, E.; Chrissafis, K.; Hatzikraniotis, E.; Paraskevopoulos, K. M.; Vourlias, G.

    2014-10-01

    Transition-metal silicides are reported to be good candidates for thermoelectric applications because of their thermal and structural stability, high electrical conductivity, and generation of thermoelectric power at elevated temperatures. Chromium disilicide (CrSi2) is a narrow-gap semiconductor and a potential p-type thermoelectric material up to 973 K with a band gap of 0.30 eV. In this work, CrSi2 was formed from Si wafers by use of a two-step, pack-cementation, chemical diffusion method. Several deposition conditions were used to investigate the effect of temperature and donor concentration on the structure of the final products. Scanning electron microscopy and x-ray diffraction analysis were performed for phase identification, and thermal stability was evaluated by means of thermogravimetric measurements. The results showed that after the first step, chromizing, the structure of the products was a mixture of several Cr-Si phases, depending on the donor (Cr) concentration during the deposition process. After the second step, siliconizing, the pure CrSi2 phase was formed as a result of Si enrichment of the initial Cr-Si phases. It was also revealed that this compound has thermoelectric properties similar to those reported elsewhere. Moreover, it was found to have exceptional chemical stability even at temperatures up to 1273 K.

  12. XTEM Studies of Nickel Silicide Growth on Si(100) Using a Ni/Ti Bilayer System

    Science.gov (United States)

    Falke, U.; Fenske, F.; Schulze, S.; Hietschold, M.

    1997-08-01

    Using a Ni/Ti bilayer system on Si(100) substrates we found a preferential growth of epitaxial NiSi2 at reaction temperatures of about 475 °C. This is attributed to the relatively slow Ni transport rate through the Ti layer, which acts as a diffusion rate limiting barrier. Annealing temperatures of 500 °C lead to the formation of mainly orthorhombic NiSi with a small fraction of NiSi2. The silicide phases grow with well defined orientations with respect to the underlying Si lattice for annealing temperatures up to 475 °C. An einem Ni/Ti-Zweischichtsystem auf Si(100)-Substraten fanden wir ein bevorzugtes Wachstum von epitaktischem NiSi2 bei Reaktionstemperaturen von 475 °C. Das wird auf die geringe Transportrate für Ni durch die Ti-Schicht, die als Barriere zur Begrenzung der Diffusionsrate dient, zurückgeführt. Temperaturen von 500 °C führen zur Bildung von hauptsächlich orthorhombischem NiSi und, in geringem Maß, von NiSi2. Bis zu Temperaturen von 475 °C wachsen die Silicidphasen mit definierten Orientierungen in Bezug auf das darunterliegende Si-Gitter.

  13. Mesoscale Evaluation of Titanium Silicide Monolayer as a Cathode Host Material in Lithium-Sulfur Batteries

    Science.gov (United States)

    Liu, Zhixiao; Balbuena, Perla B.; Mukherjee, Partha P.

    2017-09-01

    Two-dimensional materials are competitive candidates as cathode materials in lithium-sulfur batteries for immobilizing soluble polysulfides and mitigating the shuttle effect. In this study, a mesoscale modeling approach, which combines first-principles simulation and kinetic Monte Carlo simulation, is employed to evaluate titanium silicide (Ti2Si and TiSi2) monolayers as potential host materials in lithium-sulfur batteries. It is found that the Ti2Si monolayer has much stronger affinities to Li2S x ( x = 1, 2, 4) molecules than does the TiSi2 monolayer. Also, Ti2Si can facilitate the dissociation of long-chain Li2S4 to LiS2. On the other hand, TiSi2 can only provide a weak chemical interaction for trapping soluble Li2S4. Therefore, the Ti2Si monolayer can be considered to be the next-generation cathode material for lithium-sulfur batteries. Nevertheless, the strong interaction between Ti2Si and Li2S also causes fast surface passivation. How to control the Li2S precipitation on Ti2Si should be answered by future studies.

  14. Crystal structure of the ternary silicide Gd2Re3Si5

    Directory of Open Access Journals (Sweden)

    Vitaliia Fedyna

    2014-12-01

    Full Text Available A single crystal of the title compound, the ternary silicide digadolinium trirhenium pentasilicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubooctahedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square antiprisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re—Re distance of 2.78163 (5 Å and isolated squares with an Re—Re distance of 2.9683 (6 Å.

  15. The new ternary silicide ErCo{sub 3}Si{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dzevenko, Mariya; Bigun, Inna [Ivan Franko National Univ., Lviv (Ukraine). Dept. of Analytical Chemistry

    2014-03-15

    The new ternary silicide ErCo{sub 3}Si{sub 2} adopts the ErRh{sub 3}Si{sub 2} structure type (space group Imma, Pearson code oI24, Z = 4, a = 6.950(1), b = 9.020(2), c = 5.230(1) A, R{sub 1} = 0.0565, wR{sub 2} = 0.0355, 253 F{sup 2} values, 23 variables). It is a deformation derivative of the CeCo{sub 3}B{sub 2} structure type. The coordination of the Er atom shows a normal 20-vertex polyhedron [Er(Si{sub 6}Co{sub 12}Er{sub 2})]. The two similar coordination polyhedra of Co are a distorted icosahedron [Co(Si{sub 4}Co{sub 4}Er{sub 4})], and a distorted icosahedron with one capped face [Co(Si{sub 4}Co{sub 5}Er{sub 4})]. The Si atom is surrounded by the polyhedron [Si(Co{sub 6}Si{sub 2}Er{sub 3})]. (orig.)

  16. Status of core conversion with LEU silicide fuel in JRR-4

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)

    1997-08-01

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  17. The whole-core LEU silicide fuel demonstration in the JMTR

    Energy Technology Data Exchange (ETDEWEB)

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu [Japan Atomic Energy Research Institute, Ibaraki-ken (Japan)] [and others

    1997-08-01

    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  18. Magnesium silicide nanoparticles as a deoxygenation agent for cancer starvation therapy

    Science.gov (United States)

    Zhang, Chen; Ni, Dalong; Liu, Yanyan; Yao, Heliang; Bu, Wenbo; Shi, Jianlin

    2017-05-01

    A material that rapidly absorbs molecular oxygen (known as an oxygen scavenger or deoxygenation agent (DOA)) has various industrial applications, such as in food preservation, anticorrosion of metal and coal deoxidation. Given that oxygen is vital to cancer growth, to starve tumours through the consumption of intratumoral oxygen is a potentially useful strategy in fighting cancer. Here we show that an injectable polymer-modified magnesium silicide (Mg2Si) nanoparticle can act as a DOA by scavenging oxygen in tumours and form by-products that block tumour capillaries from being reoxygenated. The nanoparticles are prepared by a self-propagating high-temperature synthesis strategy. In the acidic tumour microenvironment, the Mg2Si releases silane, which efficiently reacts with both tissue-dissolved and haemoglobin-bound oxygen to form silicon oxide (SiO2) aggregates. This in situ formation of SiO2 blocks the tumour blood capillaries and prevents tumours from receiving new supplies of oxygen and nutrients.

  19. Analysis of Channel Stress Induced by NiPt-Silicide in Metal-Oxide-Semiconductor Field-Effect Transistor and Its Generation Mechanism

    Science.gov (United States)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2013-09-01

    Channel stress induced by NiPt-silicide films in metal-oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated using UV-Raman spectroscopy, and its generation mechanism was revealed. It was possible to accurately measure the channel stress with the Raman test structure. The channel stress depends on the source/drain doping type and the second silicide annealing method. In order to discuss the channel stress generation mechanism, NiPt-silicide microstructure analyses were performed using X-ray diffraction analysis and scanning transmission electron microscopy. The channel stress generation mechanism can be elucidated by the following two factors: the change in the NiSi lattice spacing, which depends on the annealing temperature, and the NiSi crystal orientation. The analyses of these factors are important for controlling channel stress in stress engineering for high-performance transistors.

  20. Development of methods for the selective separation of scandium, zirconium and tin for radiopharmaceutical applications; Entwicklung von Methoden zur selektiven Trennung von Scandium, Zirkonium und Zinn fuer radiopharmazeutische Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Dirks-Fandrei, Carina

    2014-07-01

    The subject of the present work is the development of fast and highly selective methods for the separation and purification of scandium, zirconium and tin radionuclides from potential target materials for use in nuclear medicine. A number of selected resins (TrisKem International) were first characterized with respect to their extraction behaviour towards a large number of cations. Characterization studies were performed in batch experiments by determination of weight distribution ratios D{sub w} and further the influence of interferences on the uptake of these elements was evaluated. Weight distribution ratios were determined in different acids and acid concentrations with main focus on scandium, tin or zirconium. The interference of macro amounts of Calcium and Ti on the Sc extraction was evaluated as well as the interference of macro amounts of Y on the Zr extraction. Best suited uptake conditions were found for Scandium on DGA were determined to be 2.5 M HNO{sub 3} for Ti-Targets and 0.1 M HNO{sub 3} for Calcium-Targets. Otherwise it is also possible to extract Sc with TRU Resin. High uptakes were obtained at 2.5 M HNO{sub 3} for simulated Ti- and Calcium-targets. Separation methods were developed using elution studies; employed conditions were chosen according to parameters evaluated in the batch-experiment. The developed methods allowed separating Sc very rapidly in high purity very rapidly from Ti- or Calcium-targets. For Zr a separation method based on UTEVA Resin has been developed. Following results of batch experiments simulated Y-target solution were loaded onto a UTEVA resin column from 6 M HNO{sub 3}; the elution of Zr could be performed in 0.01 M oxalic acid. Decontamination factors in the order of 10{sup 4}-10{sup 5} could be obtained applying the developed method; the method thus allowed separating Zr in a high purity. Initial testing of a method for the separation of Sn from Cd targets based on the use of TBP Resin showed that the TBP resin seems

  1. Steady-state thermal hydraulic analysis and flow channel blockage accident analysis of JRR-4 silicide LEU core

    Energy Technology Data Exchange (ETDEWEB)

    Kaminaga, Masanori; Yamamoto, Kazuyoshi; Watanabe, Shukichi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1996-09-01

    JRR-4 is a light water moderated and cooled, graphite reflected pool type research reactor using high enriched uranium (HEU) plate-type fuels. Its thermal power is 3.5 MW. The core conversion program from HEU fuel to uranium-silicon-aluminum (U{sub 3}Si{sub 2}-Al) dispersion type fuel (Silicide fuel) with low enriched uranium (LEU) is currently conducted at the JRR-4. This report describes about the steady-state thermal hydraulic analysis results and the flow channel blockage accident analysis result. In JRR-4, there are two operation mode. One is high power operation mode up to 3.5 MW, under forced convection cooling using the primary and the secondary cooling systems. The other is low power operation mode up to 200 kW, under natural circulation cooling between the reactor core and the reactor pool without the primary and the secondary cooling systems. For the analysis of the high power operation mode under forced convection cooling and the flow channel blockage accident, COOLOD code was used. On the other hand, for the analysis of low power operation under natural convection cooling, COOLOD-N2 code was used. From steady-state thermal hydraulic analysis results of both forced and natural convection cooling, fuel temperature, minimum DNBR etc. meet the design criteria and JRR-4 LEU silicide core has enough safety margin under normal operation conditions. Furthermore, flow channel blockage accident analysis results show that one channel flow blockage accident meet the safety criteria for accident conditions which have been established for JRR-4 LEU silicide core. (author)

  2. Physical properties of ternary silicide superconductors Li2XSi3 (X = Rh, Os): An ab initio study

    Science.gov (United States)

    Alam, M. A.; Zilani, M. A. K.; Parvin, F.; Hadi, M. A.

    2017-08-01

    An ab initio method, based on the plane wave pseudopotential and the generalized gradient approximation (GGA), is performed to investigate the physical properties such as structural, elastic, electronic and bonding properties of newly synthesized Li2RhSi3 and predicted Li2OsSi3 ternary silicide superconductors for the first time. Both of these compounds are mechanically stable and are brittle in nature. They also have good machinability. Electronic band structures reveal that these compounds have metallic characteristics. They possess complex bonding nature (metallic, covalent and ionic). According to theoretical Vickers hardness, Li2RhSi3 is softer than Li2OsSi3.

  3. Development of silicide coating over molybdenum based refractory alloy and its characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, S.P., E-mail: spc@barc.gov.i [Materials Processing Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085 (India); Banerjee, S.; Sharma, I.G.; Suri, A.K. [Materials Processing Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085 (India)

    2010-08-15

    Molybdenum based refractory alloys are potential candidate materials for structural applications in high temperature compact nuclear reactors and fusion reactors. However, these alloys being highly susceptible to oxidation in air or oxygen at elevated temperature, undergoes severe losses from highly volatile molybdenum trioxide species. Present investigation, therefore, examines the feasibility of development of silicide type of coating over molybdenum base TZM alloy shape (Mo > 99 wt.%) using pack cementation coating technique. TZM alloy was synthesized in this laboratory from oxide intermediates of MoO{sub 2}, TiO{sub 2} and ZrO{sub 2} in presence of requisite amount of carbon, by alumino-thermic reduction smelting technique. The arc melted and homogenized samples of TZM alloy substrate was then embedded in the chosen and intimately mixed pack composition consisting of inert matrix (Al{sub 2}O{sub 3}), coating powder (Si) and activator (NH{sub 4}Cl) taken in the judicious proportion. The sealed charge packs contained in an alumina crucible were heated at temperatures of 1000 {sup o}C for 8-16 h heating cycle to develop the coating. The coating phase was confirmed to be of made of MoSi{sub 2} by XRD analysis. The morphology of the coating was studied by SEM characterization. It had revealed that the coating was diffusion bonded where Si from coating diffused inward and Mo from TZM substrate diffused outward to form the coating. The coating was found to be resistant to oxidation when tested in air up to 1200 {sup o}C. A maximum 100 {mu}m of coating thickness was achieved on each side of the substrate.

  4. Rate Theory Modeling and Simulation of Silicide Fuel at LWR Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Yinbin [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Ye, Bei [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Hofman, Gerard [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Yacout, Abdellatif [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division; Gamble, Kyle [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation; Mei, Zhi-Gang [Argonne National Lab. (ANL), Argonne, IL (United States). Nuclear Engineering Division

    2016-08-29

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well understood. In this report, rate theory model was developed based on existing experimental data and density functional theory (DFT) calculations so as to predict the fission gas behavior in U3Si2 at LWR conditions. The fission gas behavior of U3Si2 can be divided into three temperature regimes. During steady-state operation, the majority of the fission gas stays in intragranular bubbles, whereas the dominance of intergranular bubbles and fission gas release only occurs beyond 1000 K. The steady-state rate theory model was also used as reference to establish a gaseous swelling correlation of U3Si2 for the BISON code. Meanwhile, the overpressurized bubble model was also developed so that the fission gas behavior at LOCA can be simulated. LOCA simulation showed that intragranular bubbles are still dominant after a 70 second LOCA, resulting in a controllable gaseous swelling. The fission gas behavior of U3Si2 at LWR conditions is benign according to the rate theory prediction at both steady-state and LOCA conditions, which provides important references to the qualification of U3Si2 as a LWR fuel material with excellent fuel performance and enhanced accident tolerance.

  5. The impact of an erbium, chromium:yttrium-scandium-gallium-garnet laser with radial-firing tips on endodontic treatment.

    Science.gov (United States)

    Schoop, U; Barylyak, A; Goharkhay, K; Beer, F; Wernisch, J; Georgopoulos, A; Sperr, W; Moritz, A

    2009-01-01

    Radial-firing tips should allow a more homogeneous laser irradiation of root canal walls. The aim of the study was to assess the effects of erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser irradiation in conjunction with those newly designed tips. The investigation comprised bacteriology, morphological evaluations and temperature measurements. Root canals were inoculated with two test strains and laser irradiated with power settings of 0.6 W and 0.9 W and a repetition rate of 20 Hz. Subsequently, the samples were subjected to microbiological evaluation. The morphological changes of the canal walls were assessed by scanning electron microscopy. To reveal possible thermal side effects, we carried out temperature measurements. The bacteriological evaluation revealed a decisive disinfectant effect. Scanning electron microscopy showed the homogeneous removal of smear layer from the root canal walls. The temperature rise at the root surface during the irradiation was moderate, yielding 1.3 degrees C for the 0.6 W setting and 1.6 degrees C for the 0.9 W setting. The investigations indicated that the Er,Cr:YSGG laser, in conjunction with radial-firing tips, is a suitable tool for the elimination of bacteria in root canals and for the removal of smear layer.

  6. Effect of scandium addition on the microstructure, mechanical and wear properties of the spray formed hypereutectic aluminum–silicon alloys

    Energy Technology Data Exchange (ETDEWEB)

    Raghukiran, Nadimpalli; Kumar, Ravi, E-mail: nvrk@iitm.ac.in

    2015-08-12

    Hypereutectic Al–x%Si–0.8Sc alloys (x=13, 16, 19 and 22 wt%) were produced by spray forming. The microstructures of all the alloys exhibited very fine silicon phase with average size of about 5–10 µm irrespective of the silicon content of the alloy. Transmission electron microscopy revealed the presence of a nano-scale scandium rich phase, identified as AlSi{sub 2}Sc{sub 2} (V-phase) uniformly distributed in the alloy. The presence of V-phase resulted in higher matrix hardness (1.34 GPa) in contrast to 1.04 GPa observed in the case of binary Al–Si alloys by nanoindentation. Isothermal heat treatment at 375 °C revealed insignificant coarsening of silicon phase in both binary and ternary alloys. The Al–x%Si–0.8Sc alloys exhibited higher flow stress and tensile strength in contrast to their binary alloy counterparts which was attributed to the bi-modal size distribution of the strengthening phases in the form of nano-scale V-phase and sub-micron to 10 µm size silicon particles. The pin-on-disk wear tests exhibited appreciable improvement in the wear performance of the relatively low-silicon content ternary alloys over their binary counterparts while the high-silicon content binary and ternary alloys exhibited no much difference in the wear performance.

  7. Scandium and Titanium Containing Single-Walled Carbon Nanotubes for Hydrogen Storage: a Thermodynamic and First Principle Calculation.

    Science.gov (United States)

    Mananghaya, Michael; Yu, Dennis; Santos, Gil Nonato; Rodulfo, Emmanuel

    2016-06-15

    The generalized gradient approximation (GGA) to density functional theory (DFT) calculations indicate that the highly localized states derived from the defects of nitrogen doped carbon nanotube with divacancy (4ND-CNxNT) contribute to strong Sc and Ti bindings, which prevent metal aggregation. Comparison of the H2 adsorption capability of Sc over Ti-decorated 4ND-CNxNT shows that Ti cannot be used for reversible H2 storage due to its inherent high adsorption energy. The Sc/4ND-CNxNT possesses favorable adsorption and consecutive adsorption energy at the local-density approximation (LDA) and GGA level. Molecular dynamics (MD) study confirmed that the interaction between molecular hydrogen and 4ND-CNxNT decorated with scandium is indeed favorable. Simulations indicate that the total amount of adsorption is directly related to the operating temperature and pressure. The number of absorbed hydrogen molecules almost logarithmically increases as the pressure increases at a given temperature. The total excess adsorption of hydrogen on the (Sc/4ND)10-CNxNT arrays at 300 K is within the range set by the department of energy (DOE) with a value of at least 5.85 wt%.

  8. Thin film properties of sputtered niobium silicide on SiO/sub 2/, Si/sub 3/N/sub 4/, and N/sup +/ poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Chow, T.P.; Lu, W.J.; Steckl, A.J.; Baliga, B.J.

    1986-01-01

    Thin film properties of niobium silicide sputtered from a slightly silicon-rich (Si/Nb approx. = 2.3), cold-pressed alloy target onto SiO/sub 2/, Si/sub 3/N/sub 4/, and n doped poly-Si have been investigated. The structural and compositional properties were examined with x-ray diffraction, Rutherford backscattering spectrometry (RBS), and secondary ion mass spectrometry (SIMS). X-ray diffraction revealed that NbSi/sub 2/ was the predominant silicide phase present, unlike those films reported previously, which contained significant amounts of an intermediate silicide phase (Nb/sub 5/Si/sub 3/). These films had a SiNb ratio of 2.1 as determined from RBS and contained lower levels of common contaminants (such as N/sub 2/, O/sub 2/, and carbon). Isochronal and isothermal annealing showed that the major decrease in resistivity occurred in the first 5 min, and a resistivity value of approx. =70 ..mu cap omega..-cm was obtained after annealing at 1000/sup 0/C. During annealing, phosphorus was found to diffuse through NbSi/sub 2/ rapidly, similar to other refractory silicides.

  9. Ni and Ni Silicides Ohmic Contacts on N-type 6H-SiC with Medium and Low Doping Level

    Directory of Open Access Journals (Sweden)

    S. Cichon

    2011-04-01

    Full Text Available Ni silicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structures were ohmic with low contact resistivity approximately 8×10-4 Ω cm2 after annealing at 960°C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070°C to see ohmic behavior appearing with resistivities reaching 8×10-3 Ω cm2 and this was valid only for Ni and Ni2Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is expected to be overcome for example with a covering layer.

  10. Formation and thermal stability of Ti-capped Co-silicide from Co-Ta alloy films on (100) Si and polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Joo; Choi, Hyo Jick; Ko, Dae Hong [Yonsei Univ., Seoul (Korea, Republic of); Ku, Ja Hum; Choi, Si Young; Fujihara, Kazuyuki [Samsung Electronics Co., Ltd., Yongin (Korea, Republic of); Yang, Cheol Woong [Sungkyunkwan Univ., Suwon (Korea, Republic of)

    2002-04-01

    Co-Ta alloy films were deposited on (100) single-crystalline and polycrystalline silicon substrates by using DC magnetron sputtering. The interfacial reactions between the Co-Ta alloy films and the silicon substrates were investigated in the temperature range of 500 {approx} 820 degree C by using rapid thermal annealing in an N{sub 2} ambient. In contrast to the Co/si system, we observed that the formation of Co-silicide and the transformation from the high resistivity CoSi phase to the low resistivity CoSi{sub 2} phase in the Co-Ta/Si system occurred at higher temperatures than it did in the Co/Si system. The Co-silicide films on Si and poly-Si substrates formed from Co-Ta alloy films maintained low sheet resistance values upon high temperature annealing while those of Co-silicide films from the Co/Si system increased significantly. The improvement in the thermal stability of the Co-silicide films formed from Co-Ta alloy films is due to the formation of Ta-compounds, such as the TaSi{sub 2} phase, at the grain boundaries and at the surfaces of the CoSi{sub 2} films.

  11. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    Science.gov (United States)

    Mahan, John E.

    1990-01-01

    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  12. Oxidation at through-hole defects in fused slurry silicide coated columbium alloys FS-85 and Cb-752

    Science.gov (United States)

    Levine, S. R.

    1973-01-01

    Metal recession and interstitial contamination at 0.08-centimeter-diameter through-hole intentional defects in fused slurry silicide coated FS-85 and Cb-752 columbium alloys were studied to determine the tolerance of these materials to coating defects. Five external pressure reentry simulation exposures to 1320 C and 4.7 x 1,000 N/sq m (maximum pressure) resulted in a consumed metal zone having about twice the initial defect diameter for both alloys with an interstitial contamination zone extending about three to four initial defect diameters. Self-healing occurred in the 1.33 x 10 N/sq m, 1320 C exposures and to a lesser extent in internal pressure reentry cycles to 1320 C and 1.33 x 100 N/sq m (maximum pressure).

  13. Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Benkherbache, H. [Universite de M' Sila, (28000) M' Sila (Algeria); Merabet, A., E-mail: merabet_abdelali@yahoo.f [Laboratoire Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, (19000) Setif (Algeria)

    2010-02-26

    In this work, the solid-state reaction between a thin film of chromium and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction and the sheet resistance measurements. The thickness of 100 nm chromium layer has been deposited by electronic bombardment on Si (100) substrates, part of them had previously been implanted with arsenic ions of 10{sup 15} at/cm{sup 2} doses and an energy of 100 keV. The samples were heat treated under rapid thermal annealing at 500 {sup o}C for time intervals ranging from 15 to 60 s. The rapid thermal annealing leads to a reaction at the interface Cr/Si inducing the formation and the growth of the unique silicide CrSi{sub 2}, but no other phase can be detected. For samples implanted with arsenic, the saturation value of the sheet resistance is approximately 1.5 times higher than for the non-implanted case.

  14. Effects of scandium addition on iron-bearing phases and tensile properties of Al–7Si–0.6Mg alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tzeng, Yu-Chih [Department of Mechanical Engineering, National Central University, Jhongli, Taiwan (China); Wu, Chih-Ting [Department of Vehicle Engineering, Army Academy R.O.C., Jhongli, Taiwan (China); Bor, Hui-Yun; Horng, Jain-Long; Tsai, Mu-Lin [Department of Mechanical Engineering, National Central University, Jhongli, Taiwan (China); Institute of Materials Science and Engineering, National Central University, Jhongli, Taiwan (China); Lee, Sheng-Long, E-mail: shenglon@cc.ncu.edu.tw [Department of Mechanical Engineering, National Central University, Jhongli, Taiwan (China); Institute of Materials Science and Engineering, National Central University, Jhongli, Taiwan (China)

    2014-01-21

    Iron is the most deleterious impurity in aluminum alloys and can easily combine with aluminum to form an acicular β-Al{sub 5}FeSi phase that reduces ductility during the solidification of the molten metal. Adding scandium (Sc) to Al–7Si–0.6Mg alloys can transform the acicular β-Al{sub 5}FeSi phase into a comparatively harmless nodular Sc–Fe phase (Al{sub 12}Si{sub 6}Fe{sub 2}(Mg,Sc){sub 5}). This Sc–Fe phase has a lower hardness and elastic modulus than the β-Al{sub 5}FeSi phase; it is thus less likely to initiate cracks in the Al matrix. Moreover, the nodular Sc–Fe phase can improve the fluidity of Al during solidification, reducing interdendritic shrinkage. Tensile testing measurements showed that the elongation of Al–7Si–0.6Mg alloys with 0.04 and 0.12 wt% Sc can be respectively increased by 115% and 110% compared to Al–7Si–0.6Mg without Sc. The corresponding quality indices are increased by 17% and 19%, respectively, suggesting that the tensile properties of Al–7Si–0.6Mg alloys can be enhanced by adding scandium.

  15. Separation of (44)Ti from proton irradiated scandium by using solid-phase extraction chromatography and design of (44)Ti/(44)Sc generator system.

    Science.gov (United States)

    Radchenko, V; Meyer, C A L; Engle, J W; Naranjo, C M; Unc, G A; Mastren, T; Brugh, M; Birnbaum, E R; John, K D; Nortier, F M; Fassbender, M E

    2016-12-16

    Scandium-44g (half-life 3.97h [1]) shows promise for positron emission tomography (PET) imaging of longer biological processes than that of the current gold standard, (18)F, due to its favorable decay parameters. One source of (44g)Sc is the long-lived parent nuclide (44)Ti (half-life 60.0 a). A (44)Ti/(44g)Sc generator would have the ability to provide radionuclidically pure (44g)Sc on a daily basis. The production of (44)Ti via the (45)Sc(p,2n) reaction requires high proton beam currents and long irradiation times. Recovery and purification of no-carrier added (nca) (44)Ti from scandium metal targets involves complex separation chemistry. In this study, separation systems based on solid phase extraction chromatography were investigated, including branched diglycolamide (BDGA) resin and hydroxamate based ZR resin. Results indicate that ZR resin in HCl media represents an effective (44)Ti/(44g)Sc separation system. Copyright © 2016 Elsevier B.V. All rights reserved.

  16. Effect of P{sup +} ions on the microstructure and the nature of the formed silicides in the Cr/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Mirouh, K. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria)]. E-mail: mirouh.kamel@caramail.com; Bouabellou, A. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria); Halimi, R. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria); Karaali, A. [Laboratoire des Couches Minces et Interfaces, Departement de Physique, Universite de Constantine, Campus chaab Errassas, Constantine 25000 (Algeria); Mosser, A. [IPCMS-GSI, 23 rue du Loess, F-67037 Strasbourg (France); Ehret, G. [IPCMS-GSI, 23 rue du Loess, F-67037 Strasbourg (France)

    2004-12-15

    The effect of the phosphorus on the microstructure and on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and P{sup +} doped monocrystalline silicon. Cross-sectional transmission electron microscopy (XTEM) investigation of the samples, annealed at 475 deg. C for different times, shows that the presence of phosphorus leads to the formation of CrSi{sub 2} disilicide, free of defects, and Cr{sub 3}Si silicide for lower and higher annealing times, respectively. In the case of undoped substrate the formed CrSi{sub 2} disilicide is stable and contains a high concentration of stacking faults when the chromium is partially consumed.

  17. Vertically grown multiwalled carbon nanotube anode and nickel silicide integrated high performance microsized (1.25 μl) microbial fuel cell

    KAUST Repository

    Mink, Justine E.

    2012-02-08

    Microbial fuel cells (MFCs) are an environmentally friendly method for water purification and self-sustained electricity generation using microorganisms. Microsized MFCs can also be a useful power source for lab-on-a-chip and similar integrated devices. We fabricated a 1.25 μL microsized MFC containing an anode of vertically aligned, forest type multiwalled carbon nanotubes (MWCNTs) with a nickel silicide (NiSi) contact area that produced 197 mA/m 2 of current density and 392 mW/m 3 of power density. The MWCNTs increased the anode surface-to-volume ratio, which improved the ability of the microorganisms to couple and transfer electrons to the anode. The use of nickel silicide also helped to boost the output current by providing a low resistance contact area to more efficiently shuttle electrons from the anode out of the device. © 2012 American Chemical Society.

  18. Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing; Comportement du silicium en milieu nitrique. Application au retraitement des combustibles siliciures d'uranium

    Energy Technology Data Exchange (ETDEWEB)

    Cheroux, L

    2001-07-01

    Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

  19. Morphological and electrical properties of self-assembled iron silicide nanoparticles on Si(0 0 1) and Si(1 1 1) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Molnár, G., E-mail: molnargy@mfa.kfki.hu; Dózsa, L.; Erdélyi, R.; Vértesy, Z.; Osváth, Z.

    2015-12-01

    Highlights: • Epitaxial iron silicide nanostructures were grown on Si(1 1 1) and Si(0 0 1) substrates. • The size and shape of the particles are the function of the thickness and annealing. • The local current–voltage characteristics were measured by conductive AFM. • The different size and shape nanoparticles show similar I–V characteristics. • The tip current is dominated in few nm size sites, visible in the AFM phase image. - Abstract: Epitaxial iron silicide nanostructures are grown by solid phase epitaxy on Si(0 0 1) and Si(1 1 1), and by reactive deposition epitaxy on Si(0 0 1) substrates. The formation process is monitored by reflection high-energy electron diffraction. The morphology, size, and electrical properties of the nanoparticles are investigated by scanning electron microscopy, by electrically active scanning probe microscopy, and by confocal Raman spectroscopy. The results show that the shape, size, orientation, and density of the nanoobjects can be tuned by self-assembly, controlled by the lattice misfit between the substrates and iron silicides. The size distribution and shape of the grown nanoparticles depend on the substrate orientation, on the initial thickness of the evaporated iron, on the temperature and time of the annealing, and on the preparation method. The so-called Ostwald ripening phenomena, which state that the bigger objects develop at the expense of smaller ones, controls the density of the nanoparticles. Raman spectra show the bigger objects do not contain β-FeSi{sub 2} phase. The different shape nanoparticles exhibit small, about 100 mV barrier compared to the surrounding silicon. The local leakage current of the samples measured by conductive AFM using a Pt coated Si tip is localized in a few nanometers size sites, and the sites which we assume are very small silicide nanoparticles or point defects.

  20. Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, M.; He, Y.R.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering

    1997-12-01

    A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.

  1. Gd-Sc-based mixed-metal nitride cluster fullerenes: mutual influence of the cage and cluster size and the role of scandium in the electronic structure.

    Science.gov (United States)

    Svitova, Anna L; Popov, Alexey A; Dunsch, Lothar

    2013-03-18

    The influence of the cage as well as of the cluster size has been studied in Gd-Sc nitride cluster fullerenes, which have been synthesized and isolated for these studies. A series of carbon cages ranging from C78 to C88 have been synthesized, isolated, and characterized in detail using absorption and vibrational spectroscopy as well as electrochemistry and density functional theory calculations. Gd-Sc mixed-metal cluster fullerenes in carbon cages different from C80 were described for the first time. A review of their structures, properties, and stability is given. The synthesis was performed with melamine as an effective solid source of nitrogen, providing high fullerene yield and suppressing empty fullerene formation. Substitution of gadolinium by scandium imposes a noticeable influence on the electronic structure of nitride cluster fullerenes as revealed by electrochemical, spectroscopic, and computational methods.

  2. Effect of deposition conditions on the structure, phase composition and electrical properties of the chromium silicide films

    Energy Technology Data Exchange (ETDEWEB)

    Trofimov, V I [Institute of Radioengineering and Electronics, 11/7 Mokhovaya Str., 125009 Moscow (Russian Federation); Kim, J [CN-Regional Innovation Agency, 244-19 Songgok-ri, Asan City, 336-813 (Korea, Republic of); Bae, S [University of Incheon, 177 Dohwa-Dong, Incheon City, 402-749 (Korea, Republic of)], E-mail: trof@mail.cplire.ru

    2008-03-15

    Thin chromium silicide films with thickness up to 20 nm were deposited by flash evaporation of CrSi{sub 2} powder onto silica glass and (100) KCl substrates at temperatures from 20 to 550{sup 0}C and analyzed by electrical resistance measurements and transmission electron microscopy. The film phase composition depends crucially on deposition procedure: if a CrSi{sub 2} powder was thermally treated just prior deposition, CrSi{sub 2} film grows otherwise Cr{sub 3}Si film is formed. Under deposition onto unheated substrate an amorphous film grows. A crystalline phase appears at {approx}280 deg. C for CrSi{sub 2} and 250 deg. C for Cr{sub 3}Si and furtheron its fraction increases. The CrSi{sub 2} film consists of densely packed crystallites, whereas Cr{sub 3}Si film structure resembles a network of fine crystallites imbedded into amorphous silicon-based matrix. The resistivity of CrSi{sub 2} film grows with substrate temperature, whereas that of Cr{sub 3}Si film reduces. The observed resistivity - film thickness dependence is well described by the Fuchs-Sondheimer model for CrSi{sub 2} films and Mayadas-Shatzkes model for Cr{sub 3}Si films, since in the formers the crystallites size is larger than a film thickness, whereas in the latter's it is less than a film thickness.

  3. Effect of deposition conditions on the structure, phase composition and electrical properties of the chromium silicide films

    Science.gov (United States)

    Trofimov, V. I.; Kim, J.; Bae, S.

    2008-03-01

    Thin chromium silicide films with thickness up to 20 nm were deposited by flash evaporation of CrSi2 powder onto silica glass and (100) KCl substrates at temperatures from 20 to 550°C and analyzed by electrical resistance measurements and transmission electron microscopy. The film phase composition depends crucially on deposition procedure: if a CrSi2 powder was thermally treated just prior deposition, CrSi2 film grows otherwise Cr3Si film is formed. Under deposition onto unheated substrate an amorphous film grows. A crystalline phase appears at ~280°C for CrSi2 and 250°C for Cr3Si and furtheron its fraction increases. The CrSi2 film consists of densely packed crystallites, whereas Cr3Si film structure resembles a network of fine crystallites imbedded into amorphous silicon-based matrix. The resistivity of CrSi2 film grows with substrate temperature, whereas that of Cr3Si film reduces. The observed resistivity - film thickness dependence is well described by the Fuchs-Sondheimer model for CrSi2 films and Mayadas-Shatzkes model for Cr3Si films, since in the formers the crystallites size is larger than a film thickness, whereas in the latter's it is less than a film thickness.

  4. Mechanical properties of thermoelectric n-type magnesium silicide synthesized employing in situ spark plasma reaction sintering

    Science.gov (United States)

    Muthiah, Saravanan; Singh, R. C.; Pathak, B. D.; Dhar, Ajay

    2017-07-01

    Thermoelectric devices employing magnesium silicide (Mg2Si) offer an inexpensive and non-toxic solution for green energy generation compared to other existing conventional thermoelectric materials in the mid-temperature range. However, apart from the thermoelectric performance, their mechanical properties are equally important in order to avoid the catastrophic failure of their modules during actual operation. In the present study, we report the synthesis of Mg2Si co-doped with Bi and Sb employing in situ spark plasma reaction sintering and investigate its broad range of mechanical properties. The mechanical properties of the sintered co-doped Mg2Si suggest a significantly enhanced value of hardness ~5.4  ±  0.2 GPa and an elastic modulus ~142.5  ±  6 GPa with a fracture toughness of ~1.71  ±  0.1 MPa  √m. The thermal shock resistance, which is one of the most vital parameter for designing thermoelectric devices, was found to be ~300 W m-1, which is higher than most of the other existing state-of-the-art mid-temperature thermoelectric materials. The friction and wear characteristics of sintered co-doped Mg2Si have been reported for the first time, in order to realize the sustainability of their thermoelectric modules under actual hostile environmental conditions.

  5. Copper scandium zirconium phosphate

    DEFF Research Database (Denmark)

    Bond, Andrew David; Warner, Terence Edwin

    2013-01-01

    components. The [Sc(III)Zr(IV)(PO(4))(3)](2-) framework is composed of corner-sharing Sc/ZrO(6) octahedra and PO(4) tetrahedra. The Sc and Zr atoms are disordered on one atomic site on a crystallographic threefold axis. The P atom of the phosphate group lies on a crystallographic twofold axis. Nonframework...

  6. Modification by H-termination in growth process of titanium silicide on Si(0 0 1)-2 x 1 observed with scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, T., E-mail: d08gd201@ynu.ac.jp [Faculty of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku, Yokohama 240-8501 (Japan); Shudo, K.; Sato, K.; Ohno, S.; Nishioka, H.; Iida, T.; Toramaru, M.; Tanaka, M. [Faculty of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku, Yokohama 240-8501 (Japan)

    2009-11-30

    Formation processes of titanium silicide on hydrogen-terminated H/Si(0 0 1)-2 x 1 surface are studied at the atomic scale with a scanning tunneling microscopy (STM). Square-shaped nanoislands were observed on the Ti/H/Si(0 0 1) surface after annealed at 873-1073 K. These are the epitaxial nanoislands moderately grown due to the local orientation relationship between C49-TiSi{sub 2} and Si(0 0 1), because passivation by surface hydrogen on Si(0 0 1) suppresses active and complex bond formation of Ti-Si.

  7. Effect of Chemistry and Particle Size on the Performance of Calcium Disilicide Primers. Part 1 - Synthesis of Calcium Silicide (CaSi2) by Rotary Atomization

    Science.gov (United States)

    2010-02-01

    reactions 1 and 2, respectively. A general rule of thumb for thermite reactions is that when the heat of formation per gram of product is lower than -1.6 kJ...34Calcium Silicide, CaSk" J. Chem. Soc Abstr. 82, II, 320, 1902. 2. Goldschmidt, H., "New Thermite Reactions, Iron Age, 82, 232, 1908. 3. MIL-C-324...Highway 361 Crane, IN 47522-5001 ATK Small Caliber System ATTN: M. Mansfield D. Clark R. Carpenter N. Tharp Lake City Army Ammunition Plant P.O. Box 1000 Independence, MO 64051-1000 16

  8. Synthesis and characterization of reduced scandium halide containing one- and two-dimensional metal bonded arrays. [Sc--ScCl3; Cs3Sc2Cl9; CsScCl3

    Energy Technology Data Exchange (ETDEWEB)

    Poeppelmeier, K.R.

    1978-08-01

    The stabilization effect of metal-metal bond formation on reduced scandium compounds was studied. The binary compounds Sc/sub 7/Cl/sub 12/, Sc/sub 5/Cl/sub 8/, Sc/sub 7/Cl/sub 10/ and ScCl were prepared by high temperature techniques and were characterized by single crystal x-ray diffraction. The respective metal arrays in these compounds can be viewed as fragments of scandium metal ranging from discrete six atom metal cluster species (Sc(Sc/sub 6/Cl/sub 12/)), through intermediate single and double infinite chain configurations ((ScCl/sub 2/)(Sc/sub 4/Cl/sub 6/)) and ((ScCl/sub 2/)(Sc/sub 6/Cl/sub 8/)) to double metal close-packed sheets (ScCl). The halogen atoms effectively isolate the clusters, chains and sheets by bonding face, edge or exo positions on the metal arrays. The common occurrence of isolated scandium (III) ions emphasizes that a minimum number of bonding electrons is required to stabilize what are formally anionic metal arrays. The distribution of the reduction electrons in these anisotropic materials was studied by magnetic susceptibility, EPR and uv-X photoelectron spectroscopy. The ternary compounds studied were Cs/sub 3/Sc/sub 2/Cl/sub 9/ and CsScCl/sub 3/. The anion-bridged metal chain of the hexagonal perovskite structure was found to stabilize scandium (II). CsScCl/sub 3/ was found to be grossly nonstoichiometric on the transition metal site and the effects of the mixed valence character were studied between the single valence extremes Cs/sub 3/Sc/sub 2 + x/Cl/sub 9/; 0< x < 1.0.

  9. Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

    Science.gov (United States)

    Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki

    2017-06-01

    Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model. He received the B.S. degree in School of Advanced Materials Engineering from Kookmin University, Seoul, South Korea in 2012, and the M.S. degree in Department of Materials Science and Engineering from Seoul National University, Seoul, South Korea in 2014. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and top-gate polycrystalline-silicon thin-film transistors. He received the M.S. degree in innovation technology from Ecol Polytechnique, Palaiseau, France in 2013. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and copper

  10. Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Inhye [Department of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea and System LSI Manufacturing Operation Center, Samsung Electronics Co., Ltd, Gyeonggi-do 17113 (Korea, Republic of); Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Shin, Changhee [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Shin, Seokyoon; Lee, Kunyoung [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea and Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 04763 (Korea, Republic of)

    2016-05-15

    In this study, the effects of a thin Ru interlayer on the thermal and morphological stability of NiSi have been investigated. Ru and Ni thin films were deposited sequentially to form a Ni/Ru/Si bilayered structure, without breaking the vacuum, by remote plasma atomic layer deposition (RPALD) on a p-type Si wafer. After annealing at various temperatures, the thermal stabilities of the Ni/Ru/Si and Ni/Si structures were investigated by various analysis techniques. The results showed that the sheet resistance of the Ni/Ru/Si sample was consistently lower compared to the Ni/Si sample over the entire temperature range. Although both samples exhibited the formation of NiSi{sub 2} phases at an annealing temperature of 800 °C, as seen with glancing angle x-ray diffraction, the peaks of the Ni/Ru/Si sample were observed to have much weaker intensities than those obtained for the Ni/Si sample. Moreover, the NiSi film with a Ru interlayer exhibited a better interface and improved surface morphologies compared to the NiSi film without a Ru interlayer. These results show that the phase transformation of NiSi to NiSi{sub 2} was retarded and that the smooth NiSi/Si interface was retained due to the activation energy increment for NiSi{sub 2} nucleation that is caused by adding a Ru interlayer. Hence, it can be said that the Ru interlayer deposited by RPALD can be used to control the phase transformation and physical properties of nickel silicide phases.

  11. Scandium functionalized carbon aerogel: Synthesis of nanoparticles and structure of a new ScOCl and properties of NaAlH{sub 4} as a function of pore size

    Energy Technology Data Exchange (ETDEWEB)

    Javadian, Payam; Nielsen, Thomas K. [Center for Energy Materials, Interdisciplinary Nanoscience Center (iNANO), and Department of Chemistry, Aarhus University, DK-8000 Aarhus (Denmark); Ravnsbæk, Dorthe B. [Department of Material Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge 02142, MA (United States); Jepsen, Lars H. [Center for Energy Materials, Interdisciplinary Nanoscience Center (iNANO), and Department of Chemistry, Aarhus University, DK-8000 Aarhus (Denmark); Polanski, Marek [Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw (Poland); Plocinski, Tomasz [Faculty of Material Science and Engineering, Warsaw University of Technology, 144 Woloska Str., 02-507 Warsaw (Poland); Kunce, Izabela [Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw (Poland); Besenbacher, Flemming [Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Bystrzycki, Jerzy [Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw (Poland); Jensen, Torben R., E-mail: trj@chem.au.dk [Center for Energy Materials, Interdisciplinary Nanoscience Center (iNANO), and Department of Chemistry, Aarhus University, DK-8000 Aarhus (Denmark)

    2015-11-15

    A new method for scandium-functionalization of carbon aerogels forming nanoparticles of a new scandiumoxochloride, ScOCl is presented. Sodium aluminiumhydride, NaAlH{sub 4}, is successfully melt infiltrated into the nano porous scaffolds with pore sizes of D{sub max}=7, 10, 13, 21, 26 and 39 nm, containing scandium based nano particles (<2.9 wt%) confirmed by elemental analysis and scanning electron microscopy. A systematic study of hydrogen storage properties of the nano composite materials is presented. An aqueous solution of ScCl{sub 3} was initially infiltrated and formed nanoconfined [Sc(OH)(H{sub 2}O){sub 5}]{sub 2}Cl{sub 4}(H{sub 2}O){sub 2}, which transforms to nanoparticles of a new scandium oxochloride, ScOCl at 192 °C and to Sc{sub 2}O{sub 3} at 420 °C. ScOCl crystallizes in an orthorhombic unit cell a=3.4409(8), b=3.9613(6) and c=8.178(2) Å, space group Pmmn, and is built from layers of [ScO{sub 4}Cl{sub 2}] octahedra forming neutral ScOCl layers. Temperature programmed desorption mass spectroscopy shows slightly improved kinetics for release of hydrogen with decreasing pore size. Continuous cycling of hydrogen release and uptake measured by the Sieverts' method reveal a larger preserved hydrogen storage capacity for scandium-functionalized aerogel with the larger pores (39 nm). - Highlights: • New synthesis approach for nanoporous Sc-functionalization carbon aerogel (Sc-CA). • The new scandium oxochloride, ScOCl, structure is obtained. • NaAlH{sub 4} nanoconfined in Sc-CA with pores ranging between 7 nm

  12. Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.

    Science.gov (United States)

    Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong

    2014-11-01

    The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

  13. Synthesis of nano-patterned and Nickel Silicide embedded amorphous Si thin layer by ion implantation for higher efficiency solar devices

    Science.gov (United States)

    Bhowmik, D.; Bhattacharjee, S.; Lavanyakumar, D.; Naik, V.; Satpati, B.; Karmakar, P.

    2017-11-01

    We report the ion beam based single step synthesis process of surface-patterned amorphous Silicon (a-Si) with a buried plasmon active nickel silicide layer for the realization of cost-effective, higher efficiency Silicon (Si) photovoltaic devices. Simultaneous amorphization, surface pattern formation and buried layer development are achieved by normal incidence 10 keV Ni1+ ion bombardment on Si(100) surface at a fluence of 1 × 1017. Atomic Force Microscopy study shows rim-surrounded crater like periodic nanostructure on the surface whereas cross-sectional Transmission Electron Microscopy detects the amorphization and implant buried layer just below the surface. The distribution of implanted Ni ions and Si vacancies, obtained by the Monte Carlo simulation (SRIM) is consistent with the experimental results. Spatially resolved Electron Energy Loss Spectroscopy measurement detects that the buried layer is nickel silicide. The potential application of such nano-patterned and plasmon active system for future low-cost a-Si based higher efficient Photovoltaic devices is discussed.

  14. Thermoelectric characteristics of iron silicide thermoelectric converter with the transition metallic compound as an additive; Sen`i kinzoku kagobutsu wo tenkabutsu to shita keikatetsu netsuden soshi no netsuden tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Hayashibara, M.; Oda, M. [Hitachi, Ltd., Tokyo (Japan)

    1994-04-13

    The thin film must be converted into a bulky shape in order that the high electric power may be produced by the iron silicide thermoelectric converter. Study was then made to establish the homogeneous bulk production method, in which the additive must diffuse sufficiently in the iron silicide and bond strongly to it during the sintering. Selected as an additive in the present study, Co compounds were all decomposed below the sintering temperature and remained in the iron silicide. The Co sulfide, phosphide, bromide and iodide were particularly high in reactivity with the iron silicide. The Co, of which the added quantity was proportional to the electric conductivity, was almost homogenized into a solid solution. In the experiment, both Co sulfide and phosphide were equal in thermoelectric power as an additive. The Co bromide and iodide were maximally about 10% and 50%, respectively lower in thermoelectric power than the Co sulfide. It is attributable to the FeSi2 reformed to the electrically insulating SiO2 and low-thermoelectric power FeSi, because both Co bromide and iodide are oxidizing compounds. 7 refs., 10 figs.

  15. Characterization of complex carbide–silicide precipitates in a Ni–Cr–Mo–Fe–Si alloy modified by welding

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharyya, D., E-mail: dhb@ansto.gov.au; Davis, J.; Drew, M.; Harrison, R.P.; Edwards, L.

    2015-07-15

    Nickel based alloys of the type Hastelloy-N™ are ideal candidate materials for molten salt reactors, as well as for applications such as pressure vessels, due to their excellent resistance to creep, oxidation and corrosion. In this work, the authors have attempted to understand the effects of welding on the morphology, chemistry and crystal structure of the precipitates in the heat affected zone (HAZ) and the weld zone of a Ni–Cr–Mo–Fe–Si alloy similar to Hastelloy-N™ in composition, by using characterization techniques such as scanning and transmission electron microscopy. Two plates of a Ni–Cr–Mo–Fe–Si alloy GH-3535 were welded together using a TiG welding process without filler material to achieve a joint with a curved molten zone with dendritic structure. It is evident that the primary precipitates have melted in the HAZ and re-solidified in a eutectic-like morphology, with a chemistry and crystal structure only slightly different from the pre-existing precipitates, while the surrounding matrix grains remained unmelted, except for the zones immediately adjacent to the precipitates. In the molten zone, the primary precipitates were fully melted and dissolved in the matrix, and there was enrichment of Mo and Si in the dendrite boundaries after solidification, and re-precipitation of the complex carbides/silicides at some grain boundaries and triple points. The nature of the precipitates in the molten zone varied according to the local chemical composition. - Graphical abstract: Display Omitted - Highlights: • Ni-based alloy with Cr, Mo, Si, Fe and C was welded, examined with SEM, EBSD, and TEM. • Original Ni{sub 2}(Mo,Cr){sub 4}(Si,C) carbides changed from equiaxed to lamellar shape in HAZ. • Composition and crystal structure remained almost unchanged in HAZ. • Original carbides changed to lamellar Ni{sub 3}(Mo,Cr){sub 3}(Si,C) in some cases in weld metal. • Precipitates were mostly incoherent, but semi-coherent in some cases in weld

  16. The use of the erbium, chromium:yttrium-scandium-gallium-garnet laser in endodontic treatment: the results of an in vitro study.

    Science.gov (United States)

    Schoop, Ulrich; Goharkhay, Kawe; Klimscha, Johannes; Zagler, Manuela; Wernisch, Johann; Georgopoulos, Apostolos; Sperr, Wolfgang; Moritz, Andreas

    2007-07-01

    The use of the erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser has become accepted in the field of cavity preparation. The development of miniaturized and flexible fiber tips has allowed this device to be used in endodontics. The authors conducted an in vitro study to assess the effects of Er,Cr:YSGG laser irradiation on root canals. The authors inoculated root canals with two bacteria, laser irradiated them at two power settings and subjected them to a quantitative microbiological evaluation. They used scanning electron microscopy (SEM) to assess morphological changes in endodontically processed and laser-irradiated root canal walls. They measured temperature increases on the root surface to determine possible thermal side effects. The bacteriological evaluation revealed a disinfecting effect in the root dentin samples that was dependent on the output power but not specific for the bacterial species investigated. SEM showed the removal of the smear layer from the root canal walls and the exposure of dentinal tubules. The temperature rise during irradiation was moderate when standardized power settings were used. The Er,Cr:YSGG laser can be used to eliminate bacteria in root canals. It also effectively removes smear layer and debris from the canal wall. Practitioners can use the Er,Cr:YSGG laser to prepare root canals for endodontic therapy.

  17. Aluminum-Scandium Alloys: Material Characterization, Friction Stir Welding, and Compatibility With Hydrogen Peroxide (MSFC Center Director's Discretionary Fund Final Report, Proj. No. 04-14)

    Science.gov (United States)

    Lee, J. A.; Chen, P. S.

    2004-01-01

    This Technical Memorandum describes the development of several high-strength aluminum (Al) alloys that are compatible with hydrogen peroxide (H2O2) propellant for NASA Hypersonic-X (Hyper-X) vehicles fuel tanks and structures. The yield strengths for some of these Al-magnesium-based alloys are more than 3 times stronger than the conventional 5254-H112 Al alloy, while maintaining excellent H2O2 compatibility similar to class 1 5254 alloy. The alloy development strategy is to add scandium, zirconium, and other transitional metals with unique electrochemical properties, which will not act as catalysts, to decompose the highly concentrated 90 percent H2O2. Test coupons are machined from sheet metals for H2O2 long-term exposure testing and mechanical properties testing. In addition, the ability to weld the new alloys using friction stir welding has also been explored. The new high-strength alloys could represent an enabling material technology for Hyper-X vehicles, where flight weight reduction is a critical requirement.

  18. High-fluence and high-density treatment of perioral rhytides using a new, fractionated 2,790-nm ablative erbium-doped Yttrium Scandium Gallium Garnet Laser.

    Science.gov (United States)

    Ciocon, David H; Hussain, Mussarat; Goldberg, David J

    2011-06-01

    In this study, we evaluated the safety and efficacy of a novel 2,790-nm erbium-doped yttrium scandium gallium garnet (Er:YSGG) laser system for the treatment of facial photodamage and perioral wrinkles using a single-treatment, high-fluence, high-density protocol. Eleven female participants with Fitzpatrick skin types II to III and facial wrinkles underwent a single full-face fractional ablative treatment with a 2,790-nm Er:YSGG laser. Follow-up visits were completed at 1, 2, and 6 weeks 3 and 6 months. Quartile improvement scale (0-4) and Fitzpatrick wrinkle scores (1-9) were used for the assessments. Based on blinded photographic assessments, the mean difference in Fitzpatrick wrinkle scores for full face wrinkles was 1.5 ± 1.2 (a reduction from 6.6 to 5.1; paired t-test, p = .003). There was also a statistically significant mean reduction of 1.7 ± 1.3 in perioral wrinkle scores (from 6.7 to 5.0; p = .002). No serious adverse events were reported. A novel, fractionated, ablative 2,790-nm Er:YSGG laser can safely and effectively treat photodamage and perioral wrinkles in a single treatment using a high-fluence, high-density protocol. Cutera provided the equipment used in this study and funding to Dr. Goldberg. © 2011 by the American Society for Dermatologic Surgery, Inc.

  19. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

    2016-06-06

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  20. Safety evaluation report related to the evaluation of low-enriched uranium silicide-aluminum dispersion fuel for use in non-power reactors

    Energy Technology Data Exchange (ETDEWEB)

    1988-07-01

    Low-enriched uranium silicide-aluminum dispersion plate-type fuels have been extensively researched and developed under the international program, Reduced Enrichment in Research and Test Reactors. The international effort was led by Argonne National Laboratory (ANL) in the United States. This evaluation is based primarily on reports issued by ANL that discuss and summarize the developmental tests and experiments, including postirradiation examinations, of both miniature and full-sized plates of prototypical fuel compositions. This evaluation concludes that plate-type fuels suitable and acceptable for use in research and test reactors can be fabricated with U/sub 3/Si/sub 2/-Al dispersion compacts with uranium densities up to 4.8 g/cm/sup 3/. 4 refs., 1 fig.

  1. Structure and temperature effects on Nd3+ spectra in polycrystalline mixed scandium aluminum garnets Y3ScxAl5-xO12

    Science.gov (United States)

    Lupei, A.; Lupei, V.; Hau, S.; Gheorghe, C.; Voicu, F.

    2015-09-01

    New spectroscopic data obtained from high resolution low temperature absorption and emission spectra of Nd3+ in mixed scandium aluminum garnets Y3ScxAl5-xO12 - (x = 0-2) translucent ceramics revealed transition dependent composition effects: modification of the shapes (Lorentz at x = 0 and 2, quasi-Gauss at x = 1, x-dependent asymmetric for other x values, with obvious multicenter structure for low x), widths and shifts of the lines. Nd3+ electronic structure dependence on structural changes with composition is analyzed in terms of nephelauxetic effect and maximum splitting of manifolds: Sc3+ co-doping reduces the nephelauxetic effect, and the increase of 4F3/2 splitting from 85 cm-1 (x = 0) to 98 cm-1 (x = 2) denotes the lowering of local symmetry. The multicenter structure and inhomogeneous broadening of Nd3+ lines is attributed to crystal field distributions determined by the random occupancy of the octahedral sites by Sc3+ and Al3+. For low x (0.2) the resolved two satellites S1, S2 that accompany Nd:YAG lines are correlated to anisotropic crystal field perturbations produced by the n.n. Sc3+ by analogy to those determined by Y3+-antisites (excess of Y3+ ions that enter in octahedral sites of the melt-grown YAG crystals). The temperature evolution of the Nd3+ spectral characteristics (line intensity, shift, broadening) in the 10-300 K range is analyzed in terms of thermal population of the Stark levels, of the effect on electron-phonon interaction and on lattice expansion. The relevance of the spectroscopic properties on the laser emission characteristics in these systems is discussed.

  2. Dissolved scandium, yttrium, and lanthanum in the surface waters of the North Atlantic: Potential use as an indicator of scavenging intensity

    Science.gov (United States)

    Till, C. P.; Shelley, R. U.; Landing, W. M.; Bruland, K. W.

    2017-08-01

    Recent work has begun to elucidate the biogeochemical cycling of scandium (Sc) in the open ocean, but so far no surface distribution data have been reported of dissolved Sc, and no basin-scale surface distributions have been reported of yttrium (Y) or lanthanum (La). This work presents basin-wide surface Sc, Y, and La data in a section across the North Atlantic subtropical gyre (2011 GEOTRACES GA03) and investigates the potential utility of these distributions. This work uses dissolved and aerosol concentration data for La and Sc to estimate their surface ocean residence times in both the center of the oligotrophic gyre and near the African coastline. This work additionally shows that the surface distribution of Sc in the North Atlantic correlates with the shape of the gyre as inferred by isotherm depth, with lower Sc concentrations at the gyre boundaries. This pattern suggests that Sc could be drawn down by the elevated particle flux at the gyre boundaries. In this case, Sc removal could be used as an indicator of scavenging intensity. In order to account for variable input of Sc to the surface ocean, we propose normalizing the Sc distribution to that of Y or La, which are much less particle reactive and are input via dust to the surface North Atlantic in constant ratios with Sc. Such normalization improves the correlation with isotherm depth. We propose that the variations in dissolved Y/Sc and La/Sc ratios may be due to preferential Sc scavenging and could therefore indicate scavenging intensity.

  3. On new ternary equiatomic scandium transition metal aluminum compounds ScTAl with T = Cr, Ru, Ag, Re, Pt, and Au

    Energy Technology Data Exchange (ETDEWEB)

    Radzieowski, Mathis; Janka, Oliver [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Benndorf, Christopher [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Haverkamp, Sandra [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; University of Sao Paulo, Sao Carlos, SP (Brazil). Inst. of Physics

    2016-08-01

    The new equiatomic scandium transition metal aluminides ScTAl for T = Cr, Ru, Ag, Re, Pt, and Au were obtained by arc-melting of the elements followed by subsequent annealing for crystal growth. The samples were studied by powder and single crystal X-ray diffraction. The structures of three compounds were refined from single crystal X-ray diffractometer data: ScCrAl, MgZn{sub 2} type, P6{sub 3}/mmc, a = 525.77(3), c = 858.68(5) pm, R{sub 1} = 0.0188, wR{sub 2} = 0.0485, 204 F{sup 2} values, 13 variables, ScPtAl, TiNiSi type, Pnma, a = 642.83(4), b = 428.96(2), c = 754.54(5) pm, R{sub 1} = 0.0326, wR{sub 2} = 0.0458, 448 F{sup 2} values, 20 variables and ScAuAl, HfRhSn type, P anti 62c, a = 722.88(4), c = 724.15(4) pm, R{sub 1} = 0.0316, wR{sub 2} = 0.0653, 512 F{sup 2} values, 18 variables. Phase pure samples of all compounds were furthermore investigated by magnetic susceptibility measurements, and Pauli-paramagnetism but no superconductivity was observed down to 2.1 K for all of them. The local structural features and disordering phenomena have been characterized by {sup 27}Al and {sup 45}Sc magic angle spinning (MAS) and static NMR spectroscopic investigations.

  4. Treatment of infraorbital dark circles in atopic dermatitis with a 2790-nm erbium: yttrium scandium gallium garnet laser: a pilot study.

    Science.gov (United States)

    Park, Kui Young; Oh, In Young; Moon, Nam Ju; Seo, Seong Jun

    2013-04-01

    Although many Asian atopic patients have orbital darkening symptom and the demand to treat this condition is increasing, little has been reported in the literature on the treatment of infraorbital dark circles in atopic dermatitis. To evaluate the clinical efficacy and safety of 2790-nm erbium:yttrium scandium gallium garnet (Er:YSGG) laser therapy for reducing infraorbital dark circles in atopic dermatitis patients. Ten Korean patients over 21 year with mild atopic dermatitis and infraorbital dark circles were enrolled in this study. Patients who need active atopic dermatitis treatments are excluded because of the possibility of aggravation after laser treatment. They were treated for dark circles using a 2790-nm Er:YSGG laser. The treatment parameters were 1.8-2.2 J/cm² fluence, 6-mm spot size, and 0.3-ms pulse width with 10% overlap over the infraorbital areas once with a 4-week interval between treatments. Efficacy was assessed with a quartile grading score ranging from 0 to 5 by a blinded investigator, and the patients also documented their degree of satisfaction with the same grading score. All possible side effects were evaluated. The clinical assessment showed 74.5% (2.7) and 72.5% (2.5) improvements, and the patient satisfaction scale scores improved an average of 74% (2.4) and 71.5% (2.3) at 2 months and 4 months after treatment, respectively. There were no severe side effects or aggravation of atopic dermatitis. Our study suggests that 2790-nm Er:YSGG laser therapy can be effectively and safely used in the treatment of infraorbital dark circles in atopic dermatitis patients.

  5. The influence of cation ordering, oxygen vacancy distribution and proton siting on observed properties in ceramic electrolytes: the case of scandium substituted barium titanate.

    Science.gov (United States)

    Torino, Nico; Henry, Paul F; Knee, Christopher S; Bjørheim, Tor Svendsen; Rahman, Seikh M H; Suard, Emma; Giacobbe, Carlotta; Eriksson, Sten G

    2017-07-04

    The origin of the 2-order of magnitude difference in the proton conductivity of the hydrated forms of hexagonal and cubic oxygen deficient BaScxTi1-xO3-δ (x = 0.2 and x = 0.7) was probed using a combination of neutron diffraction and density functional theory techniques to support published X-ray diffraction, conductivity, thermogravimetric and differential scanning calorimetry studies. Cation ordering is found in the 6H structure type (space group P63/mmc) adopted by BaSc0.2Ti0.8O3-δ with scandium preferentially substituting in the vertex sharing octahedra (2a crystallographic site) and avoiding the face-sharing octahedra (4f site). This is coupled with oxygen vacancy ordering in the central plane of the face-sharing octahedra (O1 site). In BaSc0.7Ti0.3O3-δ a simple cubic perovskite (space group Pm3[combining macron]m) best represents the average structure from Rietveld analysis with no evidence of either cation ordering or oxygen vacancy ordering. Significant diffuse scattering is observed, indicative of local order. Hydration in both cases leads to complete filling of the available oxygen vacancies and permits definition of the proton sites. We suggest that the more localised nature of the proton sites in the 6H structure is responsible for the significantly lower proton conduction observed in the literature. Within the 6H structure type final model, proton diffusion requires a 3-step process via higher energy proton sites that are unoccupied at room temperature and is also likely to be anisotropic whereas the highly disordered cubic perovskite proton position allows 3-dimensional diffusion by well-described modes. Finally, we propose how this knowledge can be used to further materials design for ceramic electrolytes for proton conducting fuel cells.

  6. Silicides for VLSI applications

    CERN Document Server

    Murarka, Shyam P

    1983-01-01

    Most of the subject matter of this book has previously been available only in the form of research papers and review articles. I have not attempted to refer to all the published papers. The reader may find it advantageous to refer to the references listed.

  7. Effects of erbium-and chromium-doped yttrium scandium gallium garnet and diode lasers on the surfaces of restorative dental materials: a scanning electron microscope study.

    Science.gov (United States)

    Hatipoglu, M; Barutcigil, C

    2015-01-01

    The aim of this study is to evaluate the potential effects of laser irradiation, which is commonly performed in periodontal surgery, on the surfaces of restorative materials. Five different restorative dental materials were used in this study, as follows: (1) Resin composite, (2) poly acid-modified resin composite (compomer), (3) conventional glass ionomer cement (GIC), (4) resin-modified glass ionomer cement (RMGIC), and (5) amalgam. Four cylindrical samples (8 mm diameter, 2 mm height) were prepared for each restorative material. In addition, four freshly extracted, sound human incisors teeth were selected. Two different laser systems commonly used in periodontal surgery were examined in this study: A 810 nm diode laser at a setting of 1 W with continuous-phase laser irradiation for 10 s, and an erbium-and chromium-doped yttrium scandium gallium garnet (Er, Cr: YSGG) laser at settings of 2.5 W, 3.25 W, and 4 W with 25 Hz laser irradiation for 10 s. Scanning electron microscopy (SEM) analysis was performed to evaluate the morphology and surface deformation of the restorative materials and tooth surfaces. According to the SEM images, the Er, Cr: YSGG laser causes irradiation markings that appear as demineralized surfaces on tooth samples. The Er, Cr: YSGG laser also caused deep defects on composite, compomer, and RMGIC surfaces because of its high power, and the ablation was deeper for these samples. High-magnification SEM images of GIC samples showed the melting and combustion effects of the Er, Cr: YSGG laser, which increased as the laser power was increased. In amalgam samples, neither laser left significant harmful effects at the lowest power setting. The diode laser did cause irradiation markings, but they were insignificant compared with those left by the Er, Cr: YSGG laser on the surfaces of the different materials and teeth. Within the limitations of this study, it can be concluded that Er, Cr: YSGG laser irradiation could cause distortions of the surfaces

  8. Synthesis, Characterization, and Mechanism of Formation of Janus-Like Nanoparticles of Tantalum Silicide-Silicon (TaSi2/Si

    Directory of Open Access Journals (Sweden)

    Andrey V. Nomoev

    2014-12-01

    Full Text Available Metal-semiconductor Janus-like nanoparticles with the composition tantalum silicide-silicon (TaSi2/Si were synthesized for the first time by means of an evaporation method utilizing a high-power electron beam. The composition of the synthesized particles were characterized using high-resolution transmission electron microscopy (HRTEM, X-ray diffraction (XRD, selective area electron diffraction (SAED, and energy dispersive X-ray fluorescence (EDX analysis. The system is compared to previously synthesized core-shell type particles in order to show possible differences responsible for the Janus-like structure forming instead of a core-shell architecture. It is proposed that the production of Janus-like as opposed to core-shell or monophase particles occurs due to the ability of Ta and Si to form compounds and the relative content of Ta and Si atoms in the produced vapour. Based on the results, a potential mechanism of formation for the TaSi2/Si nanoparticles is discussed.

  9. Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors

    Science.gov (United States)

    Tanaka, Hiroaki; Isogai, Tatsunori; Goto, Tetsuya; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro

    2010-04-01

    A current drivability improvement of p-channel metal-oxide-silicon field effect transistors (MOSFETs) is necessary for the performance enhancement of complementary metal-oxide-semiconductor (CMOS) circuits. In this paper, we present the key technology for fabricating indispensable CMOS circuits with a small Schottky barrier height and a low contact resistance for p-type silicon using Pd2Si. We fabricated a Pd2Si gate Schottky barrier diode and a Kelvin pattern on silicon. The measured Schottky barrier height is 0.29 eV for p-type silicon. We also realized a very low contact resistivity of 3.7 ×10-9 Ω cm2 for the p+ region of silicon. The p-channel MOSFET with Pd2Si source/drain contacts realized a good characteristic, that is, a small off current. The technology developed in this work involves silicide formation for source/drain contacts of p-channel MOSFETs, which is expected to realize the performance enhancement of MOSFETs.

  10. Influence of c-axis orientation and scandium concentration on infrared active modes of magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mayrhofer, P. M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Eisenmenger-Sittner, C. [Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8, 1040 Vienna (Austria); Euchner, H. [Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13, 1040 Vienna (Austria)

    2013-12-16

    Doping of wurtzite aluminium nitride (AlN) with scandium (Sc) significantly enhances the piezoelectric properties of AlN. Sc{sub x}Al{sub 1−x}N thin films with different Sc concentrations (x = 0 to 0.15) were deposited by DC reactive magnetron sputtering. Infrared (IR) absorbance spectroscopy was applied to investigate the Sc concentration dependent shift of the IR active modes E{sub 1}(TO) and A{sub 1}(TO). These results are compared to ab initio simulations, being in excellent agreement with the experimental findings. In addition, IR spectroscopy is established as an economical and fast method to distinguish between thin films with a high degree of c-axis orientation and those exhibiting mixed orientations.

  11. M5Si3(M=Ti, Nb, Mo) Based Transition-Metal Silicides for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhihong [Iowa State Univ., Ames, IA (United States)

    2007-01-01

    Transition metal silicides are being considered for future engine turbine components at temperatures up to 1600 C. Although significant improvement in high temperature strength, room temperature fracture toughness has been realized in the past decade, further improvement in oxidation resistance is needed. Oxidation mechanism of Ti5Si3-based alloys was investigated. Oxidation behavior of Ti5Si3-based alloy strongly depends on the atmosphere. Presence of Nitrogen alters the oxidation behavior of Ti5Si3 by nucleation and growth of nitride subscale. Ti5Si3.2and Ti5Si3C0.5 alloys exhibited an excellent oxidation resistance in nitrogen bearing atmosphere due to limited dissolution of nitrogen and increased Si/Ti activity ratio. MoSi2 coating developed by pack cementation to protect Mo-based Mo-Si-B composites was found to be effective up to 1500 C. Shifting coating composition to T1+T2+Mo3Si region showed the possibility to extend the coating lifetime above 1500 C by more than ten times via formation of slow growing Mo3Si or T2 interlayer without sacrificing the oxidation resistance of the coating. The phase equilibria in the Nb-rich portion of Nb-B system has been evaluated experimentally using metallographic analysis and differential thermal analyzer (DTA). It was shown that Nbss (solid solution) and NbB are the only two primary phases in the 0-40 at.% B composition range, and the eutectic reaction L {leftrightarrow} NbSS + NbB was determined to occur at 2104 ± 5 C by DTA.

  12. Two scandium-biuret complexes: [Sc(C2H5N3O2)(H2O)5]Cl3 x H2O and [Sc(C2H5N3O2)4](NO3)3.

    Science.gov (United States)

    Harrison, William T A

    2008-05-01

    The scandium(III) cations in the structures of pentaaqua(biuret-kappa(2)O,O')scandium(III) trichloride monohydrate, [Sc(C(2)H(5)N(3)O(2))(H(2)O)(5)]Cl(3) x H(2)O, (I), and tetrakis(biuret-kappa(2)O,O')scandium(III) trinitrate, [Sc(C(2)H(5)N(3)O(2))(4)](NO(3))(3), (II), are found to adopt very different coordinations with the same biuret ligand. The roles of hydrogen bonding and the counter-ion in the establishment of the structures are described. In (I), the Sc(3+) cation adopts a fairly regular pentagonal bipyramidal coordination geometry arising from one O,O'-bidentate biuret molecule and five water molecules. A dense network of N-H...Cl, O-H...O and O-H...Cl hydrogen bonds help to establish the packing, resulting in dimeric associations of two cations and two water molecules. In (II), the Sc(3+) cation (site symmetry 2) adopts a slightly squashed square-antiprismatic geometry arising from four O,O'-bidentate biuret molecules. A network of N-H...O hydrogen bonds help to establish the packing, which features [010] chains of cations. One of the nitrate ions is disordered about an inversion centre. Both structures form three-dimensional hydrogen-bond networks.

  13. Accelerations of {epsilon}+{alpha}{yields}{beta} transformation and sintering of iron silicide by addition of Pd; Pd tenka ni yoru keikatetsu no {epsilon}+{alpha}{yields}{beta} hentai to shoketsu no sokushin

    Energy Technology Data Exchange (ETDEWEB)

    Kato, M.; Yamamoto, N.; Takeda, T. [Isuzu Advanced Engineering Center Ltd., Kanagawa (Japan); Hayashi, K. [The University of Tokyo, Tokyo (Japan). Institute of Industrial Science

    1996-12-15

    FeSi2 ({beta} phase) semiconducting iron silicide, which is expected to be widely used as a thermoelectric material in high temperature environment, is formed below 1259K by the peritectoid reaction of FeSi ({epsilon}) and Fe2Si5 ({alpha}) two metallic phases. Because the transformation of {epsilon} + {alpha} {yields} {beta} caused by this peritectoid reaction occurs considerably slowly, the iron silicide material which is produced by sintering of the powder at temperatures above 1259K has to be isothermally heat-treated for at least 180ks at about 1120K after the sintering so that the transformation occurs completely. We have found that the transformation was drastically accelerated by the addition of a small amount of Pd in the same way as Cu; the isothermal heat-treatment time necessary for the completion of the transformation was reduced to about 1/60. The sintering time needed for the almost full densification of the powder by pressure DCL sintering (DCL; direct current loading) was also reduced. A hypothesis for the mechanisms was proposed. 15 refs., 7 figs., 2 tabs.

  14. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, Evgeniy

    2013-09-01

    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  15. Studies of valence of selected rare earth silicides determined using Si K and Pd/Rh L{sub 2,3} XANES and LAPW numerical studies

    Energy Technology Data Exchange (ETDEWEB)

    Zajdel, P., E-mail: pawel.zajdel@us.edu.pl [Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland); Kisiel, A., E-mail: andrzej.kisiel@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Szytuła, A., E-mail: andrzej.szytula@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Goraus, J., E-mail: jerzy.goraus@us.edu.pl [Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland); Balerna, A., E-mail: antonella.balerna@lnf.infn.it [Laboratori Nazionali di Frascati, INFN, Lab DAPHINE-Light, Via E. Fermi 40, I-00044 Frascati (Italy); Banaś, A., E-mail: slsba@nus.edu.sg [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Starowicz, P., E-mail: pawel.starowicz@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Konior, J., E-mail: jerzy.konior@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Kraków (Poland); Cinque, G., E-mail: gianfelice.cinque@diamond.ac.uk [Diamond Light Source, Harwell Campus, OX11 0DE Chilton-Didcot (United Kingdom); Grilli, A., E-mail: antonio.grilli@lnf.infn.it [Laboratori Nazionali di Frascati, INFN, Lab DAPHINE-Light, Via E. Fermi 40, I-00044 Frascati (Italy)

    2015-12-01

    Highlights: • The Si K and Pd L{sub 3} edges of R{sub 2}PdSi{sub 3} (R = Ce, Nd, Tb, Dy, Ho, Er) and HoRh{sub 2−x}Pd{sub x}Si{sub 2} are reported. • The R–Si bonds possess polar and 4d5s bands of Pd and Rh metallic characters. • There is no indication of Ce having a different valence than the other rare earths. • The positions and features of the calculated edges exhibit a fair agreement up to ≈10 eV. • The supercell used for Ho{sub 2}PdSi{sub 3} is good enough to reproduce the Si K edge. - Abstract: We report on the investigation of Si and Pd/Rh chemical environments using X-ray Absorption Near Edge Spectroscopy in two different families of rare earth silicides R{sub 2}PdSi{sub 3} (R = Ce, Nd, Tb, Dy, Ho, Er) and HoRh{sub 2−x}Pd{sub x}Si{sub 2} (x = 0, 0.5, 0.75, 1.0, 1.5, 1.8, 2.0). The Si K, Pd L{sub 3} and Rh L{sub 3} absorption edges were recorded in order to follow their changes upon the variation of 4f and 4d5s electron numbers. In both cases it was found that the Si K edge was shifted ≈0.5 eV toward lower energies, relative to pure silicon. In the first family, the shift decreases with increasing number of f-electrons, while the Si K edge remains constant upon rhodium–palladium substitution. In all cases the Pd L{sub 3} edge was shifted to higher energies relative to metallic Pd. No visible change in the Pd L{sub 3} position was observed either with a varying 4f electron count or upon Pd/Rh substitution. Also, the Rh L{sub 3} edge did not change. For two selected members, Ho{sub 2}PdSi{sub 3} and HoPd{sub 2}Si{sub 2}, the Wien2K’09 (LDA + U) package was used to calculate the electronic structure and the absorption edges. Si K edges were reproduced well for both compounds, while Pd L{sub 3} only exhibited a fair agreement for the second compound. This discrepancy between the Pd L{sub 3} theory and experiment for the Ho{sub 2}PdSi{sub 3} sample can be attributed to the specific ordered superstructure used in the numerical calculations

  16. Metal silicides with energetic pulses

    Science.gov (United States)

    D'Anna, E.; Leggieri, G.; Luches, A.; Majni, G.; Nava, F.; Ottaviani, G.

    1986-07-01

    Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.

  17. Ternary silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and quaternary derivatives RERh{sub 4}Si{sub 2-x}Sn{sub x} (RE = Y, Nd, Sm, Gd-Lu) - structure, chemical bonding, and solid state NMR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Vosswinkel, Daniel; Benndorf, Christopher; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Sao Paulo Univ., Sao Carlos (Brazil). Inst. of Physics; Matar, Samir F. [Bordeaux Univ., CNRS, ICMCB, UPR 9048, Pessac (France)

    2016-11-01

    The silicides ScIr{sub 4}Si{sub 2} and RERh{sub 4}Si{sub 2} (RE = Sc, Y, Tb-Lu) and silicide stannides RERh{sub 4}Si{sub 2-x}Sn{sub x}(RE = Y, Nd, Sm, Gd-Lu) were synthesized from the elements by arc-melting and subsequent annealing. The new compounds crystallize with the orthorhombic YRh{sub 4}Ge{sub 2} type structure, space group Pnma. They were characterized by X-ray powder patterns and several structures were refined from single crystal X-ray diffractometer data. The main structural motifs of this series of silicides are tricapped trigonal prisms formed by the transition metal and rare earth atoms. One of the two crystallographically independent silicon sites allows for formation of solid solutions with tin, exemplarily studied for ErRh{sub 4}Si{sub 2-x}Sn{sub x}. Electronic structure calculations reveal strong covalent Rh-Si bonding as the main stability factor. Multinuclear ({sup 29}Si, {sup 45}Sc, and {sup 89}Y) magic-angle spinning (MAS) NMR spectra of the structure representatives with diamagnetic rare-earth elements (Sc, Y, Lu) are found to be consistent with the crystallographic data and specifically confirm the selective substitution of Sn in the Si2 sites in the quaternary compounds YRh{sub 4}SiSn and LuRh{sub 4}SiSn.

  18. Dual fuel gradients in uranium silicide plates

    Energy Technology Data Exchange (ETDEWEB)

    Pace, B.W. [Babock and Wilcox, Lynchburg, VA (United States)

    1997-08-01

    Babcock & Wilcox has been able to achieve dual gradient plates with good repeatability in small lots of U{sub 3}Si{sub 2} plates. Improvements in homogeneity and other processing parameters and techniques have allowed the development of contoured fuel within the cladding. The most difficult obstacles to overcome have been the ability to evaluate the bidirectional fuel loadings in comparison to the perfect loading model and the different methods of instilling the gradients in the early compact stage. The overriding conclusion is that to control the contour of the fuel, a known relationship between the compact, the frames and final core gradient must exist. Therefore, further development in the creation and control of dual gradients in fuel plates will involve arriving at a plausible gradient requirement and building the correct model between the compact configuration and the final contoured loading requirements.

  19. Scandium doped Strontium Titanate Ceramics: Structure, Microstructure, and Dielectric Properties

    Directory of Open Access Journals (Sweden)

    Tkach, Alexander

    2008-08-01

    Full Text Available Sc-doped strontium titanate (ST ceramics were synthesised by solid state reaction, according to the composition Sr1-1.5xScxTiO3 with x = 0-0.01. Structural properties and microstructure development was examined by XRD and SEM. The dielectric properties were evaluated as a function of the temperature and frequency in the radio frequency range. Lattice parameter, density and grain size, were found to decrease slightly with increasing Sc content. The dielectric permittivity and losses decrease also. Sc-doping has only a weak effect on the quantum paraelectric behaviour of ST and no dielectric anomaly was observed, what is probably related to the limited solubility of Sc on the Sr site of the perovskite lattice of ST.

    Se sintetizaron materiales cerámicos de titanato de estroncio dopado con escandio mediante reacción en estado sólido De acuerdo a la composición Sr1-1.5xScxTiO3 con x= 0-0.1. Las propiedades estructurales y el desarrollo microestructural se estudiaron mediante XRD y SEM. La propiedades dieléctricas se estudiaron como función de la temperatura y de la frecuencia en el rango de la frecuencias de radio. Se observó que los parámetros de red, la densidad y el tamaño del grano disminuyen ligeramente con el contenido en Sc. La permitividad dieléctrica y las perdidas también disminuyen. El dopado con Sc tiene un efecto muy ligero sobre el comportamiento paraeléctrico cuántico del titanato de estroncio y no se observó anomalías dioeléctricas , lo que está probablemente relacionado con la baja solubilidad del Sc en posiciones del Sr en la estructura tipo perovskita del titanato de estroncio.

  20. Phenoxyl radical complexes of gallium, scandium, iron and manganese.

    Science.gov (United States)

    Adam, B; Bill, E; Bothe, E; Goerdt, B; Haselhorst, G; Hildenbrand, K; Sokolowski, A; Steenken, S; Weyhermüller, T; Wieghardt, K

    1997-02-01

    The hexadentate macrocyclic ligands 1,4,7-tris(3,5-dimethyl-2-hydroxybenzyl)-1,4,7-triazacyclononane (L CH 3H3 ), 1,4,7-tris(3,5-di-tert-butyl-2-hydroxybenzyl)-1,4,7-triazacyclononane (L(Bu) H3 ) and 1,4,7-tris(3-tert-butyl-5-methoxy-2-hydroxybenzyl)-1,4,7-triazacyclononane (L OCH 3-H3 ) form very stable octahedral neutral complexes LM(III) with trivalent (or tetravalent) metal ions (Ga(III) , Sc(III) , Fe(III) , Mn(III) , Mn(IV) ). The following complexes have been synthesized: [L(Bu) M], where M = Ga (1), Sc (2), Fe (3); [L(Bu) Mn(IV) ]PF6 (4'); [L OCH 3M], where M = Ga (1 a), Sc (2 a), Fe (3 a); [L OCH 3Mn(IV) ]PF6 (4 a'); [L CH 3M], where M = Sc (2 b), Fe (3 b), Mn(III) (4 b); [L CH 3Mn(IV) ]2 (ClO4 )3 (H3 O)(H2 O)3 (4 b'). An electrochemical study has shown that complexes 1, 2, 3, 1 a, 2 a and 3 a each display three reversible, ligand-centred, one-electron oxidation steps. The salts [L OCH 3Fe(III) ]ClO4 and [L OCH 3Ga(III) ]ClO4 , have been isolated as stable crystalline materials. Electronic and EPR spectra prove that these oxidations produce species containing one, two or three coordinated phenoxyl radicals. The Mössbauer spectra of 3 a and [3 a](+) show conclusively that both compounds contain high-spin iron(III) central ions. Temperature-dependent magnetic susceptibility measurements reveal that 3 a has an S = 5/2 and [3a](+) an S = 2 ground state. The latter is attained through intramolecular antiferromagnetic exchange coupling between a high-spin iron(III) (S1 = 5/2) and a phenoxyl radical (S2 = 1/2) (H = - 2JS1 S2 ; J = - 80 cm(-1) ). The manganese complexes undergo metal- and ligand-centred redox processes, which were elucidated by spectroelectrochemistry; a phenoxyl radical Mn(IV) complex [Mn(IV) L OCH 3](2+) is accessible. Copyright © 1997 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Atomic layer deposition of scandium-based oxides

    Energy Technology Data Exchange (ETDEWEB)

    Nyns, Laura; Lisoni, Judit G.; Bosch, Geert van den; Elshocht, Sven van; Houdt, Jan van [IMEC, Leuven (Belgium)

    2014-02-15

    Gd{sub x}Sc{sub 2-x}O{sub 3} and Al{sub x}Sc{sub 2-x}O{sub 3} have been investigated as potential high-k intergate dielectric (IGD) in planar NAND flash technology, such as hybrid floating gate (HFG). We have examined the atomic layer deposition (ALD) of Sc{sub 2}O{sub 3}, Gd{sub x}Sc{sub 2-x}O{sub 3}, and Al{sub x}Sc{sub 2-x}O{sub 3} on Si using Sc(MeCp){sub 3}, Gd({sup i}PrCp){sub 3}, TMA, and H{sub 2}O as precursors. The composition of Gd{sub x}Sc{sub 2-x}O{sub 3} and Al{sub x}Sc{sub 2-x}O{sub 3} ranged from 4% to 76% Gd and from 7% to 66% Al, respectively. All compositions show linear growth behavior. While pure Sc{sub 2}O{sub 3} is crystalline as-deposited, the layer becomes amorphous once ∝20% of Al is added. The (222) reflection of the cubic phase is also seen for Gd{sub x}Sc{sub 2-x}O{sub 3} with less than 9% Gd. The bandgap of as-deposited Gd{sub x}Sc{sub 2-x}O{sub 3} decreases with increasing Gd content while the opposite trend is observed for Al{sub x}Sc{sub 2-x}O{sub 3}. A k-value of ∝21 can be obtained for Gd{sub x}Sc{sub 2-x}O{sub 3} with approximately 26-52% Gd, irrespective of the Gd content. For Al{sub x}Sc{sub 2-x}O{sub 3} on the other hand, a maximum k-value of ∝19 is achieved with ∝48% Al. Although the k-value of Al{sub x}Sc{sub 2-x}O{sub 3} is lower than that of Gd{sub x}Sc{sub 2-x}O{sub 3}, its large breakdown field makes this material more suitable for HFG flash applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Spark plasma sintering of aluminum powders prealloyed with scandium additions

    Energy Technology Data Exchange (ETDEWEB)

    Cooke, R.W.; Kraus, N.P.; Bishop, D.P., E-mail: Paul.Bishop@dal.ca

    2016-03-07

    The objective of this research was to commence work on the spark plasma sintering (SPS) of Al–Sc alloys in an effort to develop fundamental data in this area. In this precursory study, a series of binary systems containing 0.1 to 0.4 wt% Sc were processed in laboratory and industrial-scale equipment. Data revealed that all powders were responsive to SPS in both scenarios and that sintering temperature was a variable of critical importance. Hardness of as-sintered products scaled directly with Sc concentration but varied inversely with SPS temperature owing to in-situ aging of the raw powders. Hardness losses could be recovered through a post-SPS heat treatment into the T6 condition. Industrially processed slugs of Al-0.4Sc-T6 exhibited full densification and offered the highest hardness (786+/−8 MPa). This was accompanied by a nominal tensile yield strength of 197 MPa, UTS of 226 MPa and tensile ductility of 11%.

  3. Tin etching from metallic and oxidized scandium thin films

    NARCIS (Netherlands)

    Pachecka, Malgorzata; Lee, Christopher James; Sturm, J.M.; Bijkerk, Frederik

    The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show

  4. The structural and magnetic properties of holmium/scandium superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

    1997-01-01

    The properties of Ho/Sc superlattices grown by molecular beam epitaxy (MBE) have been investigated using X-ray and neutron diffraction techniques. Structural studies reveal the novel existence of more than one a lattice parameter. Examining the magnetic properties, it is found that the Ho 4f...

  5. Effect of annealing on magnetic properties and silicide formation at ...

    Indian Academy of Sciences (India)

    Abstract. The interaction of Co (30 nm) thin films on Si (100) substrate in UHV using solid state mixing technique has been studied. Cobalt was deposited on silicon substrate using electron beam evaporation at a ... characterized by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) in terms of the.

  6. Scanning MOKE investigation of ion-beam-synthesized silicide films

    Energy Technology Data Exchange (ETDEWEB)

    Gumarov, G.G., E-mail: ifoggg@gmail.com [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation); Kazan Federal University, 18 Kremlyovskaya St., Kazan 420008, Tatarstan (Russian Federation); Konovalov, D.A.; Alekseev, A.V. [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation); Petukhov, V.Yu. [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation); Kazan Federal University, 18 Kremlyovskaya St., Kazan 420008, Tatarstan (Russian Federation); Zhikharev, V.A. [Kazan State Technology University, 68 Karl Marx St., Kazan 420015, Tatarstan (Russian Federation); Nuzhdin, V.I.; Shustov, V.A. [Zavoisky Physical-Technical Institute of THE RAS, 10/7 Sibirsky Trakt, Kazan 420029, Tatarstan (Russian Federation)

    2012-07-01

    Fe ions with an energy of 40 keV were implanted into Si plates with the fluence varying in the range of (1.6-3.0) Multiplication-Sign 10{sup 17} ion/cm{sup 2} in the external magnetic field. Scanning magnetooptical Kerr effect (MOKE) studies have shown that all samples possess uniaxial anisotropy. Both the coercive field and the anisotropy field increase with fluence. It was suggested that induced anisotropy is caused by inverse magnetostriction.

  7. Effects of nitrogen annealing on surface structure, silicide formation ...

    Indian Academy of Sciences (India)

    2002; Froment et al 2003). Also, the ferromagnetic nature of cobalt makes it a suitable candidate for the magnetic record- ing industry. It is well known that in the case of metal sili- cides the post deposition processing plays a ..... to the formation of larger magnetic clusters as can be seen in AFM images. This in turn leads to a ...

  8. Electronic transport properties of tungsten silicide thin films

    Science.gov (United States)

    Martin, T. L.; Malhotra, V.; Mahan, J. E.

    1984-03-01

    Tungsten suicide thin films have been prepared by neutralized ion beam sputtering of the metal onto a polycrystalline silicon layer followed by furnace annealing. The films appear to be essentially sing le-phase disilicide with the possibility of a percent or so carbon and oxygen content. The material behaves as a classical metallic conductor, with a temperature-independent residual resistivity of 16 μΩ-cm and a room temperature intrinsic resistivity of 7 μΩ-cm. Hall effect measurements indicate the material is predominantly a hole conductor, with a room temperature Hall mobility of 30cm2/V-s and an apparent free carrier concentration of 8.9×1021 cm-3. The effective one-carrier mobility derived from geometrical magnetoresistance data, on the other hand, is ≈95 cm2/V-s; this difference, taken together with the effect of temperature on the transport properties, suggests there is mixed conduction.

  9. Milestone report on MD potential development for uranium silicide

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jianguo [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation Dept.; Zhang, Yongfeng [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation Dept.; Hales, Jason Dean [Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuel Modeling and Simulation Dept.

    2016-03-01

    This report summarizes the progress on the interatomic potential development of triuranium-disilicide (U3Si2) for molecular dynamics (MD) simulations. The development is based on the Tersoff type potentials for single element U and Si. The Si potential is taken from the literature and a Tersoff type U potential is developed in this project. With the primary focus on the U3Si2 phase, some other U-Si systems such as U3Si are also included as a test of the transferability of the potentials for binary U-Si phases. Based on the potentials for unary U and Si, two sets of parameters for the binary U-Si system are developed using the Tersoff mixing rules and the cross-term fitting, respectively. The cross-term potential is found to give better results on the enthalpy of formation, lattice constants and elastic constants than those produced by the Tersoff mixing potential, with the reference data taken from either experiments or density functional theory (DFT) calculations. In particular, the results on the formation enthalpy and lattice constants for the U3Si2 phase and lattice constants for the high temperature U3Si (h-U3Si) phase generated by the cross-term potential agree well with experimental data. Reasonable agreements are also reached on the elastic constants of U3Si2, on the formation enthalpy for the low temperature U3Si (m-U3Si) and h-U3Si phases, and on the lattice constants of m-U3Si phase. All these phases are predicted to be mechanically stable. The unary U potential is tested for three metallic U phases (α, β, γ). The potential is found capable to predict the cohesive energies well against experimental data for all three phases. It matches reasonably with previous experiments on the lattice constants and elastic constants of αU.

  10. Silicide-to-silicon specific contact resistance characterization

    NARCIS (Netherlands)

    Stavitski, N.

    2009-01-01

    The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is

  11. Effects of nitrogen annealing on surface structure, silicide formation ...

    Indian Academy of Sciences (India)

    Author Affiliations. Ganesh K Rajan1 Shivaraman Ramaswamy1 C Gopalakrishnan1 D John Thiruvadigal2. Nanotechnology Research Centre, SRM University, Kancheepuram District 603 203, India; Department of Physics, SRM University, Kancheepuram District 603 203, India ...

  12. Production of scandium-44m and scandium-44g with deuterons on calcium-44: cross section measurements and production yield calculations

    Science.gov (United States)

    Duchemin, C.; Guertin, A.; Haddad, F.; Michel, N.; Métivier, V.

    2015-09-01

    HIGHLIGHTS • Production of Sc-44m, Sc-44g and contaminants. • Experimental values determined using the stacked-foil technique. • Thick-Target production Yield (TTY) calculations. • Comparison with the TALYS code version 1.6. Among the large number of radionuclides of medical interest, Sc-44 is promising for PET imaging. Either the ground-state Sc-44g or the metastable-state Sc-44m can be used for such applications, depending on the molecule used as vector. This study compares the production rates of both Sc-44 states, when protons or deuterons are used as projectiles on an enriched Calcium-44 target. This work presents the first set of data for the deuteron route. The results are compared with the TALYS code. The Thick-Target production Yields of Sc-44m and Sc-44g are calculated and compared with those for the proton route for three different scenarios: the production of Sc-44g for conventional PET imaging, its production for the new 3 γ imaging technique developed at the SUBATECH laboratory and the production of a Sc-44m/Sc-44g in vivo generator for antibody labelling.

  13. Structures and H2 adsorption properties of porous scandium metal-organic frameworks.

    Science.gov (United States)

    Ibarra, Ilich A; Lin, Xiang; Yang, Sihai; Blake, Alexander J; Walker, Gavin S; Barnett, Sarah A; Allan, David R; Champness, Neil R; Hubberstey, Peter; Schröder, Martin

    2010-12-10

    Two new three-dimensional Sc(III) metal-organic frameworks {[Sc(3)O(L(1))(3)(H(2)O)(3)]·Cl(0.5)(OH)(0.5)(DMF)(4)(H(2)O)(3)}(∞) (1) (H(2)L(1)=1,4-benzene-dicarboxylic acid) and {[Sc(3)O(L(2))(2)(H(2)O)(3)](OH)(H(2)O)(5)(DMF)}(∞) (2) (H(3)L(2)=1,3,5-tris(4-carboxyphenyl)benzene) have been synthesised and characterised. The structures of both 1 and 2 incorporate the trinuclear trigonal planar [Sc(3)(O)(O(2)CR)(6)] building block featuring three Sc(III) centres joined by a central μ(3)-O(2-) donor. Each Sc(III) centre is further bound by four oxygen donors from four different bridging carboxylate anions, and a molecule of water located trans to the μ(3)-O(2-) donor completes the six coordination at the metal centre. Frameworks 1 and 2 show high thermal stability with retention of crystallinity up to 350 °C. The desolvated materials 1a and 2a, in which the solvent has been removed from the pores but with water or hydroxide remaining coordinated to Sc(III), show BET surface areas based upon N(2) uptake of 634 and 1233 m(2) g(-1), respectively, and pore volumes calculated from the maximum N(2) adsorption of 0.25 cm(3) g(-1) and 0.62 cm(3) g(-1), respectively. At 20 bar and 78 K, the H(2) isotherms for desolvated 1a and 2a confirm 2.48 and 1.99 wt% total H(2) uptake, respectively. The isosteric heats of adsorption were estimated to be 5.25 and 2.59 kJ mol(-1) at zero surface coverage for 1a and 2a, respectively. Treatment of 2 with acetone followed by thermal desolvation in vacuo generated free metal coordination sites in a new material 2b. Framework 2b shows an enhanced BET surface area of 1511 m(2) g(-1) and a pore volume of 0.76 cm(3) g(-1), with improved H(2) uptake capacity and a higher heat of H(2) adsorption. At 20 bar, H(2) capacity increases from 1.99 wt% in 2a to 2.64 wt% for 2b, and the H(2) adsorption enthalpy rises markedly from 2.59 to 6.90 kJ mol(-1).

  14. Scandium and Chromium in the Strontium Filament in the Homunculus of eta Carinae

    Science.gov (United States)

    Gull, T.R.; Melendez, M.; Baustista, M.A.; Ballance, C.; Hartman, H.; Lodders, K.; Martinez, M.

    2008-01-01

    We continue a systematic study of chemical abundances of the Strontium Filament found in the ejecta of eta Carinae. To this end we interpret the emission spectrum of Sc II and Cr II using multilevel non-LTE models of these systems. Since the atomic data for these ions was previously unavailable, we carry out ab initio calculations of radiative transition rates and electron impact excitation rate coefficients. The observed spectrum is emitted from a mostly neutral region with electron density of the order of 10(exp 7) cm (exp -3) and a temperature between 6000 and 7000 K. These conditions are consistent with our previous diagnostics from [Ni II], [Ti II], amd [Sr II]. The observed spectrum indicates an abundance of Sc relative Ni that more than 40 times the solar values, while the Cr/Ni abundance ratio is roughly solar. Various scenarios of depletion and dust destruction are suggested to explain such abnormal abundances.

  15. Lithium scandium phosphate-based electrolytes for solid state lithium rechargeable microbatteries

    Energy Technology Data Exchange (ETDEWEB)

    Amatucci, G.G. (Dept. of Ceramics, Rutgers Univ., Piscataway, NJ (United States)); Safari, A. (Dept. of Ceramics, Rutgers Univ., Piscataway, NJ (United States)); Shokoohi, F.K. (Bellcore, Red Bank, NJ (United States)); Wilkens, B.J. (Bellcore, Red Bank, NJ (United States))

    1993-04-01

    Li[sub 3]Sc[sub 2](PO[sub 4])[sub 3] is a promising candidate for use as an electrolyte in solid state lithium rechargeable microbatteries due to its stability in air, ease of preparation, and resistance to dielectric breakdown. The room temperature ionic conductivity was optimized resulting in an increase of over two orders of magnitude to 3 x 10[sup -6] S/cm. The formation of Li[sub 3](Sc[sub 2-x]M[sub x])(PO[sub 4])[sub 3], where M=Al[sup 3+] of Y[sup 3+], resulted in the decrease of porosity, greater sinterability, and considerable enhancement of the ionic conductivity. Yttrium substitutions enhanced the conductivity slightly while aluminum increased the room temperature ionic conductivity to 1.5 x 10[sup -5] S/cm for x=0.4. Preliminary electron beam evaporation of Li[sub 3]Sc[sub 2](PO[sub 4])[sub 3] yielded amorphous thin films with ionic conductivity as high as 5 x 10[sup -5] S/cm and a composition of Li[sub 4.8]Sc[sub 1.4](PO[sub 4])[sub 3]. (orig.)

  16. The Low-Lying Electronic States of Scandium Monocarbide, ScC

    Science.gov (United States)

    Chen, Chiao-Wei; Merer, Anthony; Hsu, Yen-Chu

    2017-06-01

    Extensive wavelength-resolved fluorescence studies have been carried out for the electronic bands of ScC and Sc{}^{13}C lying in the range 14000 - 16000 cm^{-1}. Taken together with detailed rotational analyses of these bands, these studies have clarified the natures of the low-lying electronic states. The ground state is an Ω = 3/2 state, with a vibrational frequency of 648 cm^{-1}, and the first excited electronic state is an Ω = 5/2 state, with a frequency of 712 cm^{-1}, lying 155.54 cm^{-1} higher. These states are assigned as the lowest spin-orbit components of X^2Π_i and a^4Π_i, respectively. The quartet nature of the a state is confirmed by the observation of the ^4Π_{3/2} component, 18.71 cm^{-1} above the ^4Π_{5/2} component. The strongest bands in the region studied are two ^4Δ_{7/2} - ^4Π_{5/2} transitions, where the upper states lie 14355 and 15445 cm^{-1} above X^2Π_{3/2}. Extensive doublet-quartet mixing occurs, which results in some complicated emission patterns. The energy order, a^4Π above X^2Π, is consistent with the ab initio calculations of Kalemos et al., but differs from that found by Simard et al in the isoelectronic YC molecule. A. Kalemos, A. Mavridis and J.F. Harrison, J. Phys. Chem. A155, 755 (2001). B. Simard, P.A. Hackett and W.J. Balfour, Chem. Phys. Lett., 230, 103 (1994).

  17. Effect of scandium on structure and hardening of Al–Ca eutectic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Belov, N.A., E-mail: nikolay-belov@yandex.ru [National Research and Technological University “MISIS”, 4, Leninsky pr., Moscow 119049 (Russian Federation); Naumova, E.A. [Bauman Moscow State Technical University, 5, 2 ul. Baumanskaya, Moscow, 105005 (Russian Federation); Alabin, A.N. [National Research and Technological University “MISIS”, 4, Leninsky pr., Moscow 119049 (Russian Federation); UC RUSAL, 13/1, Nikoloyamskaya st., Moscow, 109240 (Russian Federation); Matveeva, I.A. [UC RUSAL, 13/1, Nikoloyamskaya st., Moscow, 109240 (Russian Federation)

    2015-10-15

    The phase composition, structure and hardening of alloys in the aluminium corner of the Al–Ca–Sc system were studied in the range up to 10% Ca and up to 1% S≿. The experimental study (optical, scanning and transmission electron microscopy with electron-microprobe analysis, differential thermal analysis and hardness measurements) was combined with Thermo-Calc software simulation for the optimization of the alloy composition. It was shown that only phases of the binary systems (Al{sub 4}Ca and Al{sub 3}Sc) might be in equilibrium with the aluminium solid solution. It was shown that the (Al) + Al{sub 4}Ca eutectic had a much finer structure as compared with the Al–Si eutectic, which suggests a possibility of reaching higher mechanical properties as compared to commercial alloys of the A356 type. The influence of the annealing temperature within the range up to 600 °C on the structure and hardness of the Al–Ca–Sc experimental alloys was studied. It was determined that the maximum hardening corresponded to the annealing at 300 °C, which was due to the precipitation of Al{sub 3}Sc nanoparticles with their further coarsening. With an example of an Al-7.6% Ca-0.3% Sc model experimental alloy, a principal possibility of manufacturing aluminium casting alloys based on the (Al) + Al{sub 4}Ca eutectic was demonstrated. Unlike commercial alloys of the A356 type, the model alloy does not require quenching, as hardening particles are formed in the course of annealing of casting. - Highlights: • Al–Ca–Sc phase diagram in aluminum corner. • Formation of Al{sub 3}Sc nanoparticles in eutectic (Al) + Al{sub 4}Ca during heating at 300–450 °C. • Hardening and thermal stability of proposed (Al–Ca–Sc) and commercial (Al–Si–Mg, 356 type) eutectic alloys.

  18. Conditioning of red mud for subsequent titanium and scandium recovery. A conceptual design study

    Energy Technology Data Exchange (ETDEWEB)

    Alkan, G.; Xakalashe, B.; Kaussen, F.; Friedrich, Bernd [RWTH Aachen Univ. (Germany). IME Inst. of Process Metallurgy and Metal Recycling; Yagmurlu, B. [RWTH Aachen Univ. (Germany). IME Inst. of Process Metallurgy and Metal Recycling; MEAB Chemie Technik GmbH, Aachen (Germany)

    2017-03-15

    Leaching experiments were undertaken on red mud materials (red mud and red mud slag). The red mud slag was produced via the carbothermic reduction of red mud at high temperatures (T > 1500 C) via SAF treatment. Furthermore, iron was recovered in the smelting step to the metal phase. Ti and Sc were successfully recovered from the red mud materials by hydrometallurgical treatment. For both critical metals, it was found that sulfuric acid was the best mineral acid among others. Since direct red mud leaching had some shortcomings, a route designed to overcome them is proposed. For optimal Ti and Sc recovery from red mud a promising process flowsheet combining pyrometallurgical and hydrometallurgical treatment is proposed as follows: pyrometallurgical processing (fluxed smelting to produce calcium oxide based slag phases and controlled cooling for crystalline and glassy slags), leaching for maximized Ti- and Sc extraction and followed by a multistage precipitation (for metal recovery and solution purification). Initial trial results showed that the proposed process is promising.

  19. Supercritical fluid chemical deposition of Pd nanoparticles on magnesium–scandium alloy for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Couillaud, Samuel; Kirikova, Marina [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zaïdi, Warda; Bonnet, Jean-Pierre [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Marre, Samuel; Aymonier, Cyril [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Zhang, Junxian; Cuevas, Fermin; Latroche, Michel [ICMPE, CNRS-UPEC, UMR 7182, 2-8 rue Henri Dunant, 94320-Thiais (France); Aymard, Luc [LRCS, UMR CNRS 6007, 33 rue Saint-Leu, 80039-Amiens (France); Bobet, Jean-Louis, E-mail: bobet@icmcb-bordeaux.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2013-10-15

    Highlights: •Nanoparticles of Pd were deposed on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method. •Numerous parameters were tested and optimized in order to obtain a homogeneous deposition. •At the first step, Pd@Mg0.65Sc0.35 decomposes into ScH{sub 2} and MgH{sub 2} under hydrogen pressure (1 MPa) at 330 °C. •The mixture, after decomposition absorbs hydrogen reversibly on Mg/MgH{sub 2} couple with good kinetics. -- Abstract: The deposition of Pd nanoparticles on the binary compound Mg{sub 0.65}Sc{sub 0.35} using the Supercritical Fluid Chemical Deposition (SFCD) method was performed. There, the SFCD operating parameters (co-solvent, temperature, CO{sub 2} and hydrogen pressure, reaction time) have been optimized to obtain homogeneous deposition of Pd nanoparticles (around 10 nm). The hydrogenation properties of the optimized Pd@Mg{sub 0.65}Sc{sub 0.35} material were determined and compared to those of Mg{sub 0.65}Sc{sub 0.35}Pd{sub 0.024}. The latter compound forms at 300 °C and 1 MPa of H{sub 2} a hydride that crystallizes in the fluorite structure, absorbs reversibly 1.5 wt.% hydrogen and exhibits fast kinetics. In contrast, Pd@Mg{sub 0.65}Sc{sub 0.35} compound decomposes into ScH{sub 2} and MgH{sub 2} during hydrogen absorption under the same conditions. However, reversible sorption reaches 3.3 wt.% of hydrogen while keeping good kinetics. The possible roles of Pd on the hydrogen-induced alloy decomposition are discussed.

  20. Geochemistry of oceanic igneous rocks - Ridges, islands, and arcs - With emphasis on manganese, scandium, and vanadium

    Science.gov (United States)

    Doe, B.R.

    1997-01-01

    A database on a number of elements in oceanic volcanic rocks is presented, including the principal major-element oxides - SiO2, TiO2, Al2O3, Fe2O3(T), MnO, MgO, CaO, Na2O, K2O, and P2O5 (where T refers to total iron) - and the trace elements - Ba, Ce, Cr, Cu, Ni, Sc, Sr, V, Pb (mainly by isotope dilution), Yb, Zn, and Zr. Interpretations are given for transition metals, with emphasis on Mn, Sc, and V, in order to determine the concentration of the elements in primitive melts and assess their trends in magmatic differentiation. Transition metals are not enriched in plagioclase, so all are incompatible with pure plagioclase removal - that is, they become enriched in the melt. Both Cr and Ni are known to be highly compatible with olivine separation - i.e., they are depleted in the melt early in differentiation. Also, Sc is compatible with clinopyroxene (Cpx) removal from the melt and is depleted by separation of Cpx. Copper does not fit well in any of the principal silicates, but Cu, like Ni, is greatly enriched in sulfides that may remain in the source or separate from the magma. Decreasing Ni abundances and increasing Cu contents during differentiation are a sign of olivine separation. In the analysis presented herein, V - in the absence of Cpx separation - is found to behave remarkably like the moderately incompatible element Zn, and these two elements add to the list of element pairs of similar incompatibility whose ratios are insensitive to differentiation and to submarine weathering as well. Both are enhanced in titanomagnetite, so both would he compatible during titanomagnetite separation. When Cpx separates, however, V becomes compatible like Sc, but Zn remains incompatible. Thus, decreasing V (and Sc) contents and increasing Zn contents during differentiation are a sign of Cpx separation. Manganese often behaves much like Zn and therefore is moderately incompatible, but Mn is less compatible than Zn and V in titanomagnetite. Thus, decreasing Zn and V with increasing Mn is an indication of titanomagnetite removal. Dual compatible and incompatible trends with differentiation are found chiefly for Cu, Sc, and Sr. Distinguishing mid-ocean ridge basalts (MORB), oceanic-island volcanic rocks (OIV), and island-arc volcanic rocks (IAV) may be accomplished by plots of Ce/Yb versus Ba/Ce, where OIV plot to higher values of Ce/Yb than do MORB, and IAV data plot to higher values of Ba/Ce than do those of MORB. These ratios do not seem to be significantly affected by submarine weathering.

  1. Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films

    Science.gov (United States)

    Ohgaki, Takeshi; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime

    2017-10-01

    ScN films were grown on MgO(110) substrates and α-Al2O3(10 1 bar 0) substrates by a molecular beam epitaxy method, and their crystalline orientation, crystallinity, and electric properties were examined. (110)-oriented ScN films were epitaxially grown on MgO(110) substrates with the same crystal orientations, and ScN films with an orientation relationship (110)ScN || (10 1 bar 0)α-Al2O3 and [001]ScN || [ 1 2 bar 10 ]α-Al2O3 were epitaxially grown on α-Al2O3(10 1 bar 0) substrates. Remarkably, electric-resistivity anisotropy was observed for ScN films grown on MgO(110) substrates, and the anisotropy depended on the growth temperature. The carrier concentration and Hall mobility of the ScN films grown on α-Al2O3(10 1 bar 0) substrates ranged from 1019-1021 cm-3 and 10-150 cm2 V-1 s-1, respectively. The crystallinity, crystalline-orientation anisotropy, and electric properties of the films were strongly affected by growth conditions. For the growth of ScN films with high mobility on α-Al2O3(10 1 bar 0) substrates, a high temperature and an appropriate ratio of source materials were necessary.

  2. Experimental partitioning of rare earth elements and scandium among armalcolite, ilmenite, olivine and mare basalt liquid

    Science.gov (United States)

    Irving, A. J.; Merrill, R. B.; Singleton, D. E.

    1978-01-01

    An experimental study was carried out to measure partition coefficients for two rare-earth elements (Sm and Tm) and Sc among armalcolite, ilmenite, olivine and liquid coexisting in a system modeled on high-Ti mare basalt 74275. This 'primitive' sample was chosen for study because its major and trace element chemistry as well as its equilibrium phase relations at atmospheric pressure are known from previous studies. Beta-track analytical techniques were used so that partition coefficients could be measured in an environment whose bulk trace element composition is similar to that of the natural basalt. Partition coefficients for Cr and Mn were determined in the same experiments by microprobe analysis. The only equilibrium partial melting model appears to be one in which ilmenite is initially present in the source region but is consumed by melting before segregation of the high-Ti mare basalt liquid from the residue.

  3. Effects of erbium‑and chromium‑doped yttrium scandium gallium ...

    African Journals Online (AJOL)

    Results: According to the SEM images, the Er, Cr: YSGG laser causes irradiation markings that appear as demineralized surfaces on tooth samples. The Er, Cr: YSGG laser also caused deep defects on composite, compomer, and RMGIC surfaces because of its high power, and the ablation was deeper for these samples.

  4. Structural and magnetic properties of holmium-scandium alloys and superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

    1997-01-01

    in the alloys form a basal-plane helix at all temperatures, with distortions of the helical arrangement for samples with the highest Ho concentrations. The dependences of the Neel temperature, T-N and the helical wave vector upon both temperature and concentration are compared with those of other alloy systems......The properties of Ho-Sc alloys and superlattices grown by molecular-beam epitaxy have been investigated using x-ray and neutron-diffraction techniques. Structural studies reveal that the alloy samples have different a lattice parameters for the Sc-seed layer and the Ho:Sc alloy grown on top....... It is found that a good description of the dependence of T-N upon concentration is given by a virtual-crystal model where the peak in the conduction-electron susceptibility varies linearly between that of the pure constituents. In the superlattices, the moments also form a basal-plane helix at T...

  5. Cage-Core Interactions in Fullerenes Enclosing Metal Clusters with Multiple Scandium and Yttrium Atoms.

    Science.gov (United States)

    Dan, Liu; Hagelberg, Frank

    2007-03-01

    Pronounced stability has been reported for metallofullerenes of the form NSc3@CN (N = 68, 78) /1/. In response of these and related findings, Density Functional Theory studies have been performed on the relation between cage-core interactions and the geometry as well as stability of endofullerenes with metal impurities containing Sc and Y. Substantial electron transfer from the metal core to the fullerene cage combines with electron backdonation, involving the interaction between the occupied orbitals of the negatively charged cage and the unoccupied d orbitals of the positively charged core. The Hueckel 4n+2 rule, well established in organic chemistry, is shown to provide a valuable heuristic tool for understanding the intramolecular electron transfer and the related stability gain /1/. The usefulness of the aromaticity concept for explaining and predicting the architecture of metallofullerenes is further exemplified by the units Sc2@C84 and Y2@C84 which were analyzed in spin triplet and singlet conditions. The Sc2 core turns out to be realized by two separated ions, while Y2 forms a bound subunit. These findings are in agreement with conclusions based on the 4n + 2 rule, assisted by Nucleus Independent Chemical Shift (NICS) calculations. /1/ Stevenson, S.; Fowler, P.W.; Heine, T.; Duchamp, J.C.; Rice, G.; Glass, T.; Harich, K.; Hadju, F.; Bible, R.; Dorn, H.C. Nature, 2000, 408, 427, /2/ S. S. Park, D. Liu, F. Hagelberg, J. Phys. Chem. A 109, 8865 (2005).

  6. EFFECT OF SCANDIUM ON HIDROGEN DISSOCIATION ENERGY AT MAGNESIUM SURFACE: AB INITIO DFT STUDY

    Directory of Open Access Journals (Sweden)

    I Wayan Sutapa

    2010-07-01

    Full Text Available The dissociative chemisorption of hydrogen on both pure and Sc-incorporated Mg(0001 surfaces have been studied by ab initio density functional theory (DFT calculation. The calculated dissociation energy of hydrogen molecule on a pure Mg(0001 surface (1.200 eV is in good agreement with comparable theoretical studies. For the Sc-incorporated Mg(0001 surface, the activated barrier decreases to 0.780 eV due to the strong interaction between the molecular orbital of hydrogen and the d metal state of Sc. This could explain the experimentally observed improvement in absorption kinetics of hydrogen when transition metals have been introduced into the magnesium materials.   Keywords: Dissociation, Adsorption, Chemisorptions, DFT, Magnesium

  7. Isolated hepatic perfusion as a treatment for uveal melanoma liver metastases (the SCANDIUM trial)

    DEFF Research Database (Denmark)

    Olofsson, Roger; Ny, Lars; Eilard, Malin Sternby

    2014-01-01

    BACKGROUND: Uveal melanoma is the most common primary intraocular malignancy in adults. Despite successful control of the primary tumor, metastatic disease will ultimately develop in approximately 50% of patients, with the liver being the most common site for metastases. The median survival...... of the longest surviving patients in Sweden during the same time period (26 versus 12 months). METHODS/DESIGN: This is the protocol for a multicenter phase III trial randomizing patients with isolated liver metastases of uveal melanoma to IHP or best alternative care (BAC). Inclusion criteria include liver...

  8. Hydrogen bonding induced polymorphism in the scandium(III) complex with ε-caprolactam

    Energy Technology Data Exchange (ETDEWEB)

    Virovets, Alexander V.; Peresypkina, Eugenia V. [Institute of Inorganic Chemistry SB RAS, Novosibirsk (Russian Federation); Novosibirsk State Univ. (Russian Federation); Cherkasova, Elizaveta V.; Cherkasova, Tatjana G. [Kuzbass State Technical Univ., Kemerovo (Russian Federation)

    2015-11-01

    Two polymorphs of [Sc(cpl){sub 6}][Cr(NCS){sub 6}] (cpl=ε- C{sub 6}H{sub 11}NO), trigonal and monoclinic, form purple elongated narrow plates and brownish-purple prisms and are formed concomitantly irrespectively of the crystallization conditions. In the trigonal polymorph both cation and anion possess C{sub 3i} site symmetry while in the monoclinic form cation and anion lie on inversion centre and 2-fold axis respectively. The nature of the polymorphism traces back to a redistribution of inter- and intramolecular hydrogen bonds that causes different conformation of the complex cations, different hydrogen bonding and different molecular packings. The [Sc(cpl){sub 6}]{sup 3+} cations in the structure of the trigonal polymorph form intermolecular N(H)..S, and in the monoclinic form both N(H)..S inter- and N(H)..O intramolecular hydrogen bonds with NCS groups of [Cr(NCS){sub 6}]{sup 3-} and cpl ligands. This aggregation leads to chains, where the cations and the anions alternate, in the trigonal modification and to layers, in which each ion is surrounded by four counterions, in the monoclinic form. Both polymorphs possess thermochromic properties, and a reversible color change from light purple to dark green takes place at 470-475 K.

  9. Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Zhi-Qiang, E-mail: zouzhq@shanghaitech.edu.cn [School of Physical Science and Technology, ShanghaiTech University, 100 Haike Road, Pudong, Shanghai, 201210 (China); Li, Xu; Liu, Xiao-Yong; Shi, Kai-Juan; Guo, Xin-Qiu [Analytical and Testing Center, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2017-03-31

    Highlights: • The α-FeSi{sub 2} nanowires epitaxially grown on Si(110) can be stable up to 750 °C. • The stable temperature of the nanowires is much lower than that of the bulk α-FeSi{sub 2} due to their small size and high relative surface area. • With increasing annealing temperature, the α-FeSi{sub 2} nanowires undergo an Ostwald ripening process and transform into large β-FeSi{sub 2} nanorods or three-dimensional nanocrystals. • The reduction in surface energy drives the transformation from metallic α-FeSi{sub 2} phase to semiconducting β-FeSi{sub 2} phase. - Abstract: Metallic α-FeSi{sub 2} nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi{sub 2}. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β-FeSi{sub 2} nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi{sub 2} NWs begin to dissolve and become thinner until disappearing. The growth of the β-FeSi{sub 2} nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β-FeSi{sub 2} nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi{sub 2} NWs.

  10. Tungsten/Magnesium silicide multilayers for soft x-ray optics.

    Science.gov (United States)

    Boher, P; Houdy, P; Kühne, M; Müller, P; Barchewitz, R; Delaboudiniere, J P; Smith, D J

    1992-01-01

    W/Mg2Si multilayers for soft x-ray optics above the MgKα and MgLα lines have been deposited by RF sputtering. Their structural characteristics have been deduced from in situ kinetic ellipsometry, ex situ grazing x-ray reflection measurements, and high-resolution electron microscopy. Their soft x-ray performances have been measured by synchrotron radiation around the MgKα and MgLα lines and related to the structural characteristics. For short wavelengths, first Bragg peak reflectivities as high as 31% have been measured for multilayers with double period equal to 84 Å. For samples with smaller layer thicknesses, these performances decrease due to finite interdiffusion at the interfaces. Nevertheless, well-defined Bragg peaks are observed even when the double period is as low as 44 Å. Near the MgLα line, more than 20% reflectivity at the first Bragg peak has been measured at normal incidence. At the same wavelength the selectivity is two times higher than that of conventional systems such as Mo/Si.

  11. Role of milling parameters and impurity on the thermoelectric properties of mechanically alloyed chromium silicide

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, T. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Umarji, A.M. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)], E-mail: umarji@mrc.iisc.ernet.in

    2008-08-11

    Mechanical alloying of Cr-Si powders (1:2 molar ratio) was carried out under different milling conditions using stainless steel milling media. In addition to formation of nanocrystalline CrSi{sub 2} phase, depending on the milling duration, speed and use of dispersant, X-ray diffraction revealed presence of CrSi phase and EDAX showed iron contamination in varying amounts. The amount of contamination and the secondary phase are found to be linearly proportional to the input impact energy during milling. The nanocrystalline powders are seen to be thermally stable in air up to 900 K. SEM of the hot pressed powders reveal an equiaxed microstructure with grain size depending on the milling duration. Electrical resistivity ({rho}), Seebeck coefficient (S) and thermal conductivity (K) were measured up to 700 K. It is seen that the thermoelectric figure of merit (ZT) is high when the amount of secondary phases is minimum. The maximum ZT observed in the samples is {approx}0.2 at 600 K which is comparable to other high temperature thermoelectric materials in the temperature range studied.

  12. Comparison of the Thermal Expansion Behavior of Several Intermetallic Silicide Alloys Between 293 and 1523 K

    Science.gov (United States)

    Raj, S. V.

    2015-03-01

    Thermal expansion measurements were conducted on hot-pressed CrSi2, TiSi2, WSi2 and a two-phase Cr-Mo-Si intermetallic alloy between 303 and 1523 K during three heat-cool cycles. The corrected thermal expansion, (Δ L/ L 0)thermal, varied with the absolute temperature, T, as where, A, B, C, and D are regression constants. Excellent reproducibility was observed for most of the materials after the first heat-up cycle. In some cases, the data from first heat-up cycle deviated from those determined in the subsequent cycles. This deviation was attributed to the presence of residual stresses developed during processing, which are relieved after the first heat-up cycle.

  13. Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications

    Science.gov (United States)

    Jhabvala, Murzy; Babu, Sachi; Monroy, Carlos; Darren, C.; Krebs, Carolyn A. (Technical Monitor)

    2001-01-01

    Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

  14. Mechanical Properties of Uranium Silicides by Nanoindentation and Finite Elements Modeling

    Science.gov (United States)

    Carvajal-Nunez, U.; Elbakhshwan, M. S.; Mara, N. A.; White, J. T.; Nelson, A. T.

    2018-02-01

    Three methods were used to measure the mechanical properties of {U}3{Si}, {U}_3{Si}2, and USi. Quasi-static and continuous stiffness measurement nanoindentation were used to determine hardness and Young's modulus, and microindentation was used to evaluate the bulk hardness. Hardness and Young's modulus of the three U-Si compounds were both observed to increase with Si content. Finally, finite elements modelling was used to validate the nanoindentation data calculated for {U}3{Si}2 and estimate its yield strength.

  15. Pulsed laser synthesis of titanium silicides using a Q-Switched Nd: Glass laser

    Science.gov (United States)

    D'Anna, E.; Leggieri, G.; Luches, A.; Luby, S.; Zemek, J.

    1989-06-01

    Titanium films 120 nm thick deposited on single-crystalline silicon (c-Si) as well as poly-Si/SiO2/c-Si substrates were subjected to Nd: glass laser irradiation. Laser fluences of 1,1.5, and 2 J/cm2 were used at the pulse duration of 30 ns. From RBS analysis it follows that on c-Si substrate titanium suicide is formed using one pulse of 1.5 J/cm2 energy density. On the substrate with surface overlayers lower fluence (1 J/cm2) was sufficient. Under these conditions the sheet resistance of the samples decreased from the initial value 5 Ω/□ to 2 3 Ω/□. The smaller threshold density of energy for suicide formation in Ti/polySi/SiO2/c-Si structure is shown to be a consequence of the SiO2 underlayer, which is a poorer heat conductor than silicon. The experimental results of the suicide synthesis are in semi-quantitative accordance with the numerical computations of the temperature vs time evolution and depth temperature distribution in our samples.

  16. Silicide formation by furnace annealing of thin Si films on large-grained Ni substrates

    Science.gov (United States)

    Brunner, A. J.; Ma, E.; Nicolet, M.-A.

    1989-03-01

    Si films with a thickness of approximately 250 nm have been electron-beam evaporated on thick, large-grained Ni substrates (grain size a few mm to 1 cm in diameter). An in situ sputter cleaning procedure has been used to clean the Ni surface before the Si deposition. Thermal annealings have been performed in a vacuum furnace. Ni2Si is the first phase that grows at temperatures between 240 °C and 300 °C as a laterally uniform interfacial layer with a diffusion-controlled kinetics. The layer thickness x follows the growth law x 2= kt, with k=k 0 exp(- E a k B T), where k 0=6.3 × 10-4cm 2/s and E a=(1-1±0.1) eV. Because of the virtually infinite supply of Ni, annealing at 800 °C for 130min yields a Ni-based solid solution as the final phase. The results are compared with those reported in the literature on suicide formation by the reaction of a thin Ni film on Si substrates, as well as with those for interfacial phase formation in Ni/Zr bilayers.

  17. Sputter behaviour of vanadium silicide studied by a computer simulation technique

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsch, B.; Zehe, A.; Samoylov, V.N.

    1986-11-01

    A detailed study of the sputter yield of VSi/sub 2/ has been carried out by a computer simulation technique. Krypton and neon ions in the energy range of 200 - 5000 eV are used, and the angle of incidence on the (0001) surface of VSi/sub 2/ is taken to be 90/sup 0/. The dynamical atom block considered in the computer program consists of 397 atoms situated at 5 equally spaced layers. Both amorphous and crystalline targets are discussed, having expectingly a different outcome for yield, as well as for preferential and directional sputtering. Theoretical results are in good accord with experimental findings.

  18. Electrophoretic deposition of magnesium silicates on titanium implants: Ion migration and silicide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Afshar-Mohajer, M. [Center for Advanced Manufacturing and Material Processing, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603 (Malaysia); Yaghoubi, A., E-mail: yaghoubi@siswa.um.edu.my [Center for High Impact Research, University of Malaya, Kuala Lumpur 50603 (Malaysia); Ramesh, S., E-mail: ramesh79@um.edu.my [Center for Advanced Manufacturing and Material Processing, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603 (Malaysia); Bushroa, A.R.; Chin, K.M.C.; Tin, C.C. [Center for Advanced Manufacturing and Material Processing, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603 (Malaysia); Chiu, W.S. [Low Dimensional Materials Research Center, Department of Physics, University of Malaya, Kuala Lumpur 50603 (Malaysia)

    2014-07-01

    Magnesium silicates (Mg{sub x}SiO{sub y}) and in particular forsterite (Mg{sub 2}SiO{sub 4}) owing to their low thermal expansion mismatch with metals are promising materials for bioactive coating of implants. Here, we report the electrophoretic deposition (EPD) of forsterite onto titanium substrates using different precursors. Unlike bulk samples which achieve full stoichiometry only beyond 1400 °C, non-stoichiometric magnesium silicate rapidly decomposes into magnesium oxide nanowires during sintering. Elemental mapping and X-ray diffraction suggest that oxygen diffusion followed by ion exchange near the substrate leads to formation of an interfacial Ti{sub 5}Si{sub 3} layer. Pre-annealed forsterite powder on the other hand shows a comparatively lower diffusion rate. Overall, magnesium silicate coatings do not exhibit thermally induced microcracks upon sintering as opposed to calcium phosphate bioceramics which are currently in use.

  19. Thin film molybdenum silicide as potential temperature sensors for turbine engines

    Science.gov (United States)

    Ho, C. H.; Prakash, S.; Deshpandey, C. V.; Doerr, H. J.; Bunshah, R. F.

    1989-01-01

    Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.

  20. Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, Alexander; Florent, Karine; Tapriya, Astha; Lee, Benjamin G.; Kurinec, Santosh K.; Young, David L.

    2016-11-21

    Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.

  1. Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Abhijit; Beese, Emily; Saenz, Theresa; Warren, Emily; Nemeth, William; Young, David; Marshall, Alexander; Florent, Karine; Kurinec, Santosh K.; Agarwal, Sumit; Stradins, Pauls

    2016-11-21

    NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

  2. Loading rate and test temperature effects on fracture of In Situ niobium silicide-niobium composites

    Science.gov (United States)

    Rigney, Joseph D.; Lewandowski, John J.

    1996-10-01

    Arc cast, extruded, and heat-treated in situ composites of niobium suicide (Nb5Si3) intermetallic with niobium phases (primary—Nbp and secondary—Nbs) exhibited high fracture resistance in comparison to monolithic Nb5Si3. In toughness tests conducted at 298 K and slow applied loading rates, the fracture process proceeded by the microcracking of the Nb5Si3 and plastic deformation of the Nbp and Nbs phases, producing resistance-curve behavior and toughnesses of 28 MPa√m with damage zone lengths less than 500 μm. The effects of changes in the Nbp yield strength and fracture behavior on the measured toughnesses were investigated by varying the loading rates during fracture tests at both 77 and 298 K. Quantitative fractography was utilized to completely characterize each fracture surface created at 298 K in order to determine the type of fracture mode ( i.e., dimpled, cleavage) exhibited by the Nbp. Specimens tested at either higher loading rates or lower test temperatures consistently exhibited a greater amount of cleavage fracture in the Nbp, while the Nbs, always remained ductile. However, the fracture toughness values determined from experiments spanning six orders of magnitude in loading rate at 298 and 77 K exhibited little variation, even under conditions when the majority of Nbp phases failed by cleavage at 77 K. The changes in fracture mode with increasing loading rate and/or decreasing test temperature and their effects on fracture toughness are rationalized by comparison to existing theoretical models.

  3. MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gumarov, G.G., E-mail: gumarov@kfti.knc.ru [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation); Petukhov, V.Yu., E-mail: petukhov@kfti.knc.ru [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation); Gumarov, A.I., E-mail: amirgumarov@rambler.ru [Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation); Khalikov, R.A., E-mail: khalikoff@gmail.com [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Konovalov, D.A., E-mail: dak@kfti.knc.ru [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Valeev, V.F., E-mail: rik@kfti.knc.ru [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Khaibullin, R.I., E-mail: rik@kfti.knc.ru [Zavoisky Physical-Technical Institute of RAS, Sibirsky tract 10/7, 420029 Kazan (Russian Federation); Kazan (Volga Region) Federal University, Kremlyovskaya St. 18, 420008 Kazan (Russian Federation)

    2012-02-01

    Magnetic-field-assisted ion-beam synthesis was used to produce thin magnetic films. Si wafers were implanted with 40 keV Fe{sup +} ions with a fluence of 3 Multiplication-Sign 10{sup 17} cm{sup -2} in the external magnetic field of 9.6 Multiplication-Sign 10{sup 4} A/m. The samples were investigated by scanning magneto-optical Kerr effect magnetometry, inductive magnetometry and reflection high-energy electron diffraction. The main synthesized phase was ferromagnetic Fe{sub 3}Si. In some regions of the samples the deviations of the easy magnetic axis near the applied magnetic field were revealed. These local changes can be caused by various reasons: the presence of mechanical stresses in a silicon substrate during the ion bombardment, the appearance of temperature gradients, inhomogeneous sputtering and the appearance of small magnetic fields in the chamber of the accelerator.

  4. High-Temperature Compatible Nickel Silicide Thermometer And Heater For Catalytic Chemical Microreactors

    DEFF Research Database (Denmark)

    Jensen, Søren; Quaade, U.J.; Hansen, Ole

    2005-01-01

    for temperatures exceeding 700 °C. The heaters and thermometers are integrated with chemical microreactors for heterogeneous catalytic conversion of gasses, and thermally activated catalytic conversion of CO to CO2 in the reactors is demonstrated. The heaters and thermometers are shown to be compatible...

  5. Pressure-induced structural transformations of the Zintl phase sodium silicide

    Science.gov (United States)

    Cabrera, Raúl Quesada; Salamat, Ashkan; Barkalov, Oleg I.; Leynaud, Olivier; Hutchins, Peter; Daisenberger, Dominik; Machon, Denis; Sella, Andrea; Lewis, Dewi W.; McMillan, Paul F.

    2009-09-01

    The high-pressure behaviour of NaSi has been studied using Raman spectroscopy and angle-dispersive synchrotron X-ray diffraction to observe the onset of structural phase transformations and potential oligomerisation into anionic Si nanoclusters with extended dimensionality. Our studies reveal a first structural transformation occurring at 8-10 GPa, followed by irreversible amorphisation above 15 GPa, suggesting the formation of Si-Si bonds with oxidation of the Si - species and reduction of Na + to metallic sodium. We have combined our experimental studies with DFT calculations to assist in the analysis of the structural behaviour of NaSi at high pressure.

  6. Ion beam synthesis and characterization of yttrium silicide in Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ayache, R. [Pharmacy Department, University of Batna, 05000 (Algeria)], E-mail: ayache_r@yahoo.fr; Bouabellou, A. [Laboratoire Couches Minces et Interfaces, Campus Chaab Errassas, Universite Mentouri de Constantine, 25000 (Algeria); Eichhorn, F.; Richter, E.; Muecklich, A. [Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden (Germany)

    2007-09-15

    Thin YSi{sub 2-x} layers are formed by 195 keV Y ion implantation in Si(111) substrates to a dose of 2 x 10{sup 17} Y{sup +}/cm{sup 2} at 500 deg. C followed by annealing in nitrogen atmosphere at different temperatures for 1 h. The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is accomplished by means of both X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the YSi{sub 2-x} layers grown on the Si has the epitaxial relationship of YSi{sub 2-x} (0 0 0 1)//Si(111) and YSi{sub 2-x} [1 1 - 2 0 ]//Si [110].

  7. Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Carlisle, J.A.; Chaiken, A.; Michel, R.P. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system.

  8. Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

    Science.gov (United States)

    Zou, Zhi-Qiang; Li, Xu; Liu, Xiao-Yong; Shi, Kai-Juan; Guo, Xin-Qiu

    2017-03-01

    Metallic α-FeSi2 nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi2. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β-FeSi2 nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi2 NWs begin to dissolve and become thinner until disappearing. The growth of the β-FeSi2 nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β-FeSi2 nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi2 NWs.

  9. Effects of substituting ytterbium for scandium on the microstructure and age-hardening behaviour of Al–Sc alloy

    Energy Technology Data Exchange (ETDEWEB)

    Tuan, N.Q., E-mail: quoctuan1884@gmail.com [CT2M – Centre for Mechanical and Materials Technologies, University of Minho, Azurém, 4800-058 Guimarães (Portugal); Pinto, A.M.P.; Puga, H. [CT2M – Centre for Mechanical and Materials Technologies, University of Minho, Azurém, 4800-058 Guimarães (Portugal); Rocha, L.A. [CT2M – Centre for Mechanical and Materials Technologies, University of Minho, Azurém, 4800-058 Guimarães (Portugal); Universidade Estadual Paulista (Unesp), Faculdade de Ciências de Bauru, SP 17033-360 (Brazil); Barbosa, J. [CT2M – Centre for Mechanical and Materials Technologies, University of Minho, Azurém, 4800-058 Guimarães (Portugal)

    2014-04-01

    In order to reduce the cost of Al–Sc alloys and maintain their mechanical properties, the microstructure and mechanical properties of Al–0.24 wt% Sc–0.07 wt% Yb in comparison with Al–0.28 wt% Sc alloys were studied. The aging behaviour, precipitate morphologies, precipitate coarsening and precipitation hardening of both alloys were investigated. The average diameter and the size distribution of nanoscale Al{sub 3}Sc and Al{sub 3}(Sc,Yb) precipitates at various aging conditions were measured. Transmission electron microscopy (TEM) and high-resolution TEM were used to deeply understand the precipitate evolution. A maximum hardness around 73 (HV{sub 30}) was obtained with a precipitate diameter from 4.3 to 5.6 nm for both alloys.

  10. Phonon thermal conductivity of scandium nitride for thermoelectrics from first-principles calculations and thin-film growth

    Science.gov (United States)

    Kerdsongpanya, Sit; Hellman, Olle; Sun, Bo; Koh, Yee Kan; Lu, Jun; Van Nong, Ngo; Simak, Sergei I.; Alling, Björn; Eklund, Per

    2017-11-01

    The knowledge of lattice thermal conductivity of materials under realistic conditions is vitally important since many modern technologies require either high or low thermal conductivity. Here, we propose a theoretical model for determining lattice thermal conductivity, which takes into account the effect of microstructure. It is based on ab initio description that includes the temperature dependence of the interatomic force constants and treats anharmonic lattice vibrations. We choose ScN as a model system, comparing the computational predictions to the experimental data by time-domain thermoreflectance. Our experimental results show a trend of reduction in lattice thermal conductivity with decreasing domain size predicted by the theoretical model. These results suggest a possibility to control thermal conductivity by microstructural tailoring and provide a predictive tool for the effect of the microstructure on the lattice thermal conductivity of materials based on ab initio calculations.

  11. Influence of scandium addition on the high-temperature grain size stabilization of oxide-dispersion-strengthened (ODS) ferritic alloy

    Energy Technology Data Exchange (ETDEWEB)

    Li, Lulu, E-mail: lli18@ncsu.edu; Xu, Weizong; Saber, Mostafa; Zhu, Yuntian; Koch, Carl C.; Scattergood, Ronald O.

    2015-06-11

    The influence of 1–4 at% Sc addition on the thermal stability of mechanically alloyed ODS ferritic alloy was studied in this work. Sc addition was found to significantly stabilize grain size and microhardness at high temperatures. Grain sizes of samples with 1 and 4 at% Sc was found maintained in the nanoscale range at temperatures up to 1000 °C with hardness maintained at 5.6 and 6.7 GPa, respectively. The detailed microstructure was also investigated from EDS elemental mapping, where nanofeatures [ScTiO] were observed, while nanosized [YTiO] particles were rarely seen. This is probably due to the concentration difference between Sc and Y, leading to the formation of [ScTiO] favoring that of [YTiO]. Precipitation was considered as the major source for the observed high temperature stabilization. In addition, 14YT–Sc alloys without large second phases such as Ti-oxide can exhibit better performance compared to conventional ODS materials.

  12. The effect of composition on the mechanism of continuous recrystallization and superplastic response of aluminum-scandium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, III, Edwin Luther [Univ. of California, Berkeley, CA (United States)

    1993-05-01

    The continuous recrystallization (CRX) appears to be fundamental in Al-Sc because it occurs irrespective of solute composition. It appears to be due to a combination of subgrain coalescence at low strains and incorporation of additional dislocations generated during grain boundary sliding at higher strains when the misorientation has increased sufficiently. Alloying additives such as Mg, Li are more important with respect to deformation after CRX is completed. Mg, and to a lesser extent Li, affect the max m-values (strain-rate sensitivities) in Al-Sc by changing the melting points (mp). Max m- values correlate inversely with mp so that the alloy with the greatest Mg had the highest m-values and lowest mp; the stress is raised at which power-law creep and breakdown occurs. The power-law breakdonw at much lower stresses in Al-0.5Sc and Al-1.2Li-0.5Sc causes the m-value to decrease more rapidly with strain rate. Al alloys for commercial superplastic applications should contain elements that raise the power-law strength so that the m-values are maximized while preserving the post-formed mechanical properties. Refs, figs, tabs.

  13. Phonon thermal conductivity of scandium nitride for thermoelectrics from first-principles calculations and thin-film growth

    DEFF Research Database (Denmark)

    Kerdsongpanya, Sit; Hellman, Olle; Sun, Bo

    2017-01-01

    The knowledge of lattice thermal conductivity of materials under realistic conditions is vitally important since many modern technologies require either high or low thermal conductivity. Here, we propose a theoretical model for determining lattice thermal conductivity, which takes into account...

  14. Scandium and Titanium Containing Single-Walled Carbon Nanotubes for Hydrogen Storage: a Thermodynamic and First Principle Calculation

    National Research Council Canada - National Science Library

    Mananghaya, Michael; Yu, Dennis; Santos, Gil Nonato; Rodulfo, Emmanuel

    2016-01-01

    The generalized gradient approximation (GGA) to density functional theory (DFT) calculations indicate that the highly localized states derived from the defects of nitrogen doped carbon nanotube with divacancy (4ND-CNxNT...

  15. Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

    Science.gov (United States)

    Sadasivam, Sridhar; Ye, Ning; Feser, Joseph P.; Charles, James; Miao, Kai; Kubis, Tillmann; Fisher, Timothy S.

    2017-02-01

    Heat transfer across metal-semiconductor interfaces involves multiple fundamental transport mechanisms such as elastic and inelastic phonon scattering, and electron-phonon coupling within the metal and across the interface. The relative contributions of these different transport mechanisms to the interface conductance remains unclear in the current literature. In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi2-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used "mixing rules" to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi2-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.

  16. Comparative evaluation of surface topography of tooth prepared using erbium, chromium: Yttrium, scandium, gallium, garnet laser and bur and its clinical implications

    Directory of Open Access Journals (Sweden)

    Mahesh Verma

    2015-01-01

    Conclusions: Er, Cr: YSGG laser can be used for preparing tooth and bond strength value achieved by laser preparation alone without surface treatment procedure lies in the range of clinical acceptability.

  17. IUPAC-NIST Solubility Data Series. 100. Rare Earth Metal Fluorides in Water and Aqueous Systems. Part 1. Scandium Group (Sc, Y, La)

    Energy Technology Data Exchange (ETDEWEB)

    Mioduski, Tomasz [Institute of Nuclear Chemistry and Technology, 03195 Warsaw (Poland); Gumiński, Cezary, E-mail: cegie@chem.uw.edu.pl [Department of Chemistry, University of Warsaw, 02093 Warsaw (Poland); Zeng, Dewen, E-mail: dewen-zeng@hotmail.com [College of Chemistry and Chemical Engineering, Central South University, 410083 Changsha (China)

    2014-03-15

    This work presents an assessment of solubility data for rare earth metal fluorides (generally of trivalent metals and of CeF{sub 4}) in water and in aqueous ternary systems. Compilations of all available experimental data are introduced for each rare earth metal fluoride with a corresponding critical evaluation. Every such evaluation contains a collection of all solubility results in water, a selection of suggested solubility data, and a brief discussion of the multicomponent systems. Because the ternary systems were seldom studied more than once, no critical evaluations of such data were possible. Only simple fluorides (no complexes or binary salts) are treated as the input substances in this report. The literature has been covered through the end of 2013.

  18. Enhanced magnetic and ferroelectric properties in scandium doped nano Bi{sub 2}Fe{sub 4}O{sub 9}

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Dimple P., E-mail: dimpled@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Sudakar, C.; Mocherla, Pavana S.V. [Department of Physics, IIT Madras, Chennai 600 036 (India); Mandal, Balaji P.; Jayakumar, Onnatu D. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tyagi, Avesh K., E-mail: aktyagi@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2012-08-15

    In this study we report the synthesis of undoped and Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles using sonochemical technique. X-ray diffraction reveals that all samples are single phase with no impurities detected. EDS analysis was done to confirm the extent of Sc{sup 3+} doping in the samples. The size and morphology of the nanoparticles have been analyzed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles show a weak ferromagnetic behavior at room temperature, which is quite different from the linear M-H relationship reported for bulk Bi{sub 2}Fe{sub 4}O{sub 9}. A magnetization of 0.144 {mu}B/f.u. is obtained at 300 K, which is mainly attributed to the uncompensated moments at the disordered particle surface resulting from the reduced coordination of the surface spins, arising due to lattice strain or oxygen deficiency. Addition of Sc{sup 3+} dopant in varying concentrations in these Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles, improves their magnetic as well as ferroelectric properties. The leakage current is considerably reduced and electric polarization increases significantly in case of Bi{sub 2}Fe{sub 4(1-x)}Sc{sub x}O{sub 9} (x = 0.1) nanoparticles. Thus it can be inferred that Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles shows promise as good multiferroic materials. -- Graphical abstract: Undoped and Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles have been synthesized using sonochemical technique. The bi-functionalities of Sc{sup 3+} doped Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles have been demonstrated. The Bi{sub 2}Fe{sub 4(1-x)}Sc{sub x}O{sub 9} (x = 0.1) nanoparticles showed enhanced magnetic and ferroelectric properties with considerably less lossy characteristics compared to the bulk Bi{sub 2}Fe{sub 4}O{sub 9}. Highlights: Black-Right-Pointing-Pointer Phase pure Bi{sub 2}Fe{sub 4}O{sub 9} nanostructures synthesized using a facile sonochemical technique. Black-Right-Pointing-Pointer Nanoparticles show a weak ferromagnetic order at room temperature. Black-Right-Pointing-Pointer Sc{sup 3+} doping in Bi{sub 2}Fe{sub 4}O{sub 9} nanoparticles alters their magnetic and ferroelectric properties. Black-Right-Pointing-Pointer A magnetization of 0.166 {mu}B/f.u. was observed for Bi{sub 2}Fe{sub 4(1-x)}Sc{sub x}O{sub 9} (x = 0.1) nanoparticles. Black-Right-Pointing-Pointer It showed enhanced ferroelectric properties with less lossy characteristics.

  19. The effect of erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser therapy on pain during cavity preparation in paediatric dental patients: a pilot study.

    Science.gov (United States)

    Eren, Figen; Altinok, Basak; Ertugral, Ferhan; Tanboga, Ilknur

    2013-06-01

    Standard treatment for caries removal and cavity preparation for restorations using mechanical means is often accompanied by fear and pain for the patient. Although the pain may be reduced by local anaesthesia, fear of the needle, noise, and the vibration of mechanical preparation remain a cause of discomfort. Erbium, chromium:yttriumscandium- gallium-garnet (Er,Cr:YSGG) laser irradiation indicates that pain perception may be reduced relative to that caused by mechanical preparation. The aim of this pilot clinical study was to perform a preliminary evaluation of pain perception during cavity preparation comparing the mechanical removal and Er,Cr:YSGG laser removal of caries from enamel and dentine. The study sample was ten children aged 7 to 12 years. Half of the preparations were completed by the laser alone and the other half were mechanically prepared. All cavities were restored with light-cured composite resin following the application of acid etch and a bonding agent. The time spent on cavity preparation and the behaviour of the patients during cavity preparation were recorded. Children were instructed to rate their pain on a visual analogue scale. In addition, the patients were asked to decide which was the more uncomfortable form of treatment and the preferred treatment for future caries therapy. Children showed considerably more body and head movement with the conventional mechanical preparation. The subjects rated the perception of pain lower when the laser technique was used. In the small number of children studied, the application of the Er,Cr:YSGG laser system was a more comfortable alternative or adjunctive method to conventional mechanical cavity preparation. A far larger study is necessary to confirm this finding.

  20. Solution synthesis, structure, and CO{sub 2} reduction reactivity of a Scandium(II) complex, {Sc[N(SiMe_3)_2]_3}{sup -}

    Energy Technology Data Exchange (ETDEWEB)

    Woen, David H.; Chen, Guo P.; Ziller, Joseph W.; Furche, Filipp; Evans, William J. [Department of Chemistry, University of California, Irvine, CA (United States); Boyle, Timothy J. [Sandia National Laboratories, Advanced Materials Laboratory, Albuquerque, NM (United States)

    2017-02-13

    The first crystallographically characterizable complex of Sc{sup 2+}, [Sc(NR{sub 2}){sub 3}]{sup -} (R=SiMe{sub 3}), has been obtained by LnA{sub 3}/M reactions (Ln=rare earth metal; A=anionic ligand; M=alkali metal) involving reduction of Sc(NR{sub 2}){sub 3} with K in the presence of 2.2.2-cryptand (crypt) and 18-crown-6 (18-c-6) and with Cs in the presence of crypt. Dark maroon [K(crypt)]{sup +}, [K(18-c-6)]{sup +}, and [Cs(crypt)]{sup +} salts of the [Sc(NR{sub 2}){sub 3}]{sup -} anion are formed, respectively. The formation of this oxidation state of Sc is also indicated by the eight-line EPR spectra arising from the I=7/2 {sup 45}Sc nucleus. The Sc(NR{sub 2}){sub 3} reduction differs from Ln(NR{sub 2}){sub 3} reactions (Ln=Y and lanthanides) in that it occurs under N{sub 2} without formation of isolable reduced dinitrogen species. [K(18-c-6)][Sc(NR{sub 2}){sub 3}] reacts with CO{sub 2} to produce an oxalate complex, {K_2(18-c-6)_3}{[(R_2N)_3Sc]_2(μ-C_2O_4-κ"1O:κ"1O'')}, and a CO{sub 2}{sup -} radical anion complex, [(R{sub 2}N){sub 3}Sc(μ-OCO-κ{sup 1}O:κ{sup 1}O')K(18-c-6)]{sub n}. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Etudes optiques de nouveaux materiaux laser: Des orthosilicates dopes a l'ytterbium: Le yttrium (lutetium,scandium) pentoxide de silicium

    Science.gov (United States)

    Denoyer, Aurelie

    La decouverte et l'elaboration de nouveaux materiaux laser solides suscitent beaucoup d'interet parmi la communaute scientifique. En particulier les lasers dans la gamme de frequence du micron debouchent sur beaucoup d'applications, en telecommunication, en medecine, dans le domaine militaire, pour la, decoupe des metaux (lasers de puissance), en optique non lineaire (doublage de frequence, bistabilite optique). Le plus couramment utilise actuellement est le Nd:YAG dans cette famille de laser, mais des remplacants plus performants sont toujours recherches. Les lasers a base d'Yb3+ possedent beaucoup d'avantages compares aux lasers Nd3+ du fait de leur structure electronique simple et de leur deterioration moins rapide. Parmi les matrices cristallines pouvant accueillir l'ytterbium, les orthosilicates Yb:Y 2SiO5, Yb:Lu2SiO5 et Yb:Sc2SiO 5 se positionnent tres bien, du fait de leur bonne conductivite thermique et du fort eclatement de leur champ cristallin necessaire a l'elaboration de lasers quasi-3 niveaux. De plus l'etude fine et systematique des proprietes microscopiques de nouveaux materiaux s'avere toujours tres interessante du point de vue de la recherche fondamentale, c'est ainsi que de nouveaux modeles sont concus (par exemple pour le champ cristallin) ou que de nouvelles proprietes inhabituelles sont decouvertes, menant a de nouvelles applications. Ainsi d'autres materiaux dopes a l'ytterbium sont connus pour leurs proprietes de couplage electron-phonon, de couplage magnetique, d'emission cooperative ou encore de bistabilite optique, mais ces proprietes n'ont encore jamais ete mises en evidence dans Yb:Y 2SiO5, Yb:Lu2SiO5 et Yb:Sc2SiO 5. Ainsi, cette these a pour but l'etude des proprietes optiques et des interactions microscopiques dans Yb:Y2SiO 5, Yb:Lu2SiO5 et Yb:Sc2SiO5. Nous utilisons principalement les techniques d'absorption IR et de spectroscopie Raman pour determiner les excitations du champ cristallin et les modes de vibration dans le materiau. Des mesures optiques sous champ magnetique ont egalement ete effectuees dans le but de caracteriser le comportement de ces excitations lorsqu'elles sont soumises a l'effet Zeeman. La resonance paramagnetique electronique a permis de completer cette etude de l'eclatement Zeeman suivant toutes les orientations du cristal. Enfin la fluorescence par excitation selective et la fluorescence induite par Raman FT, completent la description des niveaux d'energie et revelent l'existence d'emission cooperative de deux ions Yb3+ et de transferts d'energie. Les resultats de cette these apportent une contribution originale dans le domaine des nouveaux materiaux lasers par l'etude et la comprehension des interactions fines et des proprietes microscopiques d'un materiau en particulier. Ils debouchent a la fois sur des applications possibles dans le domaine de l'optique et des lasers, et sur la comprehension d'aspects fondamentaux. Cette these a prouve l'interet de ces matrices pour leur utilisation comme lasers solides: un fort eclatement du champ cristallin favorable a l'elaboration de laser quasi-3 niveaux, et de larges bandes d'absorption (dues a un fort couplage electron-phonon et a des raies satellites causees par une interaction d'echange entre deux ions Yb3+) qui permettent la generation d'impulsions laser ultra-courtes, l'accordabilite du laser, etc. De plus la miniaturisation des lasers est possible pour l'optique integree grace a des couches minces synthetisees par epitaxie en phase liquide dont nous avons demontre la tres bonne qualite structurale et l'ajustement possible de certains parametres. Nous avons reconstruit le tenseur g du niveau fondamental (qui donne des informations precieuses sur les fonctions d'onde), ceci dans le but d'aider les theoriciens a concevoir un modele de champ cristallin valide. Plusieurs mecanismes de transferts d'energie ont ete mis en evidence: un mecanisme de relaxation d'un site vers l'autre, un mecanisme d'emission cooperative, et un mecanisme d'excitation de l'Yb3+ par le Tm3+ (impurete presente dans le materiau). Ces transferts sont plutot nefastes pour la fabrication d'un laser mais sont interessants pour l'optique non lineaire (doublage de frequence, memoires optiques). Enfin, plusieurs elements (le couplage magnetique de paire, le couplage electron-phonon et l'emission cooperative) nous ont permis de conclure sur le caractere covalent de la matrice. Nous avons d'ailleurs demontre ici le role de la covalence dans l'emission cooperative, transition habituellement attribuee aux interactions multipolaires electriques.

  2. The 6-amino-6-methyl-1,4-diazepine group as an ancillary ligand framework for neutral and cationic scandium and yttrium alkyls

    NARCIS (Netherlands)

    Ge, Shaozhong; Bambirra, Sergio; Meetsma, Auke; Hessen, Bart

    2006-01-01

    The 6-amino-6-methyl-1,4-diazepine framework is a readily available neutral 6-electron ligand moiety, suitable to support cationic group 3 metal alkyl catalysts; it also provides convenient access to tri- and tetradentate monoanionic ligand derivatives.

  3. Current German Laser and Quantum Optics Research Reviewed at the 50th Annual Meeting of the Physikalische Gesellschaft.

    Science.gov (United States)

    1986-04-23

    has a substantial crys- tingen) described studies with Cr- plus tal growing capability. One paper from Nd-doped gadolinium -scandium- gallium the Hamburg...institute, read by J. Drube, garnets (GSGG), and also with Cr-doped reported on Xe-flashlamp-pumped Cr:CSA(; % gadolinium -scandium- aluminum garnets...ele- scandium- aluminum garnets (YSA) :mdi..’ ments. yttrium-scandium- gallium garnets (YSC). The crystals used in the Spindler & Optical pumping (with a

  4. Iron silicide formation at different layers of (Fe/Si){sub 3} multilayered structures determined by conversion electron Mössbauer spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Badía-Romano, L., E-mail: lbadia@unizar.es; Bartolomé, J. [Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, E-50009 Zaragoza (Spain); Rubín, J. [Departamento de Ciencia y Tecnología de Materiales y Fluidos, Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, E-50018 Zaragoza (Spain); Magén, C. [Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragón (INA), Universidad de Zaragoza, E-50018 Zaragoza (Spain); Bürgler, D. E. [Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich GmbH, D-52425 Jülich (Germany)

    2014-07-14

    The morphology and the quantitative composition of the Fe-Si interface layer forming at each Fe layer of a (Fe/Si){sub 3} multilayer have been determined by means of conversion electron Mössbauer spectroscopy (CEMS) and high-resolution transmission electron microscopy (HRTEM). For the CEMS measurements, each layer was selected by depositing the Mössbauer active {sup 57}Fe isotope with 95% enrichment. Samples with Fe layers of nominal thickness d{sub Fe} = 2.6 nm and Si spacers of d{sub Si} = 1.5 nm were prepared by thermal evaporation onto a GaAs(001) substrate with an intermediate Ag(001) buffer layer. HRTEM images showed that Si layers grow amorphous and the epitaxial growth of the Fe is good only for the first deposited layer. The CEMS spectra show that at all Fe/Si and Si/Fe interfaces a paramagnetic c-Fe{sub 1−x}Si phase is formed, which contains 16% of the nominal Fe deposited in the Fe layer. The bottom Fe layer, which is in contact with the Ag buffer, also contains α-Fe and an Fe{sub 1−x}Si{sub x} alloy that cannot be attributed to a single phase. In contrast, the other two layers only comprise an Fe{sub 1−x}Si{sub x} alloy with a Si concentration of ≃0.15, but no α-Fe.

  5. Interaction mechanism between niobium-silicide-based alloy melt and Y2O3 refractory crucible in vacuum induction melting process

    Directory of Open Access Journals (Sweden)

    Gao Ming

    2011-05-01

    Full Text Available The Y2O3 crucibles were introduced in the study as an alternative to the traditional ceramic ones in vacuum induction melting of multi-component Nb-16Si-22Ti-2Al-2Hf-17Cr (at.% alloys, to reveal the possible interactions between the alloy melt and the refractory crucible. Multiple melting time lengths and two cooling schemes were designed and used for the experiments. The chemical composition and microstructure of the tested alloy and the melt-crucible interaction were investigated and evaluated. In the experiments, Y2O3 crucible displays good physical-chemical compatibility. The results indicate that the increment of O element in the as-cast ingot is 0.03at.%-0.04at.% (72-97 ppm and the increment of Y element is very insignificant. The key features of the alloy melt interacting with Y2O3 ceramics are analyzed and concluded in the paper. As a result of the dissolution reaction xY2O3 (in molten alloy + (1-xHfO2 (impurity →Hf1-xY2xO2-x, a continuous double-layer solid film consisted of HfO2 solid solution (~2 μm and pure HfO2 (~5 μm is formed on the surface of the test ingot after cooled down in the crucible. The experimental results show that the Y2O3 crucible is applicable to the vacuum induction melting of Nb-Si based alloys.

  6. Oxide meets silicide. Synthesis and single-crystal structure of Ca{sub 21}SrSi{sub 24}O{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Reckeweg, Olaf; DiSalvo, Francis J. [Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry and Chemical Biology

    2017-06-01

    A few black, rectangular thin plates of Ca{sub 21}SrSi{sub 24}O{sub 2} were obtained by serendipity in a solid-state reaction of calcium metal, strontium chloride and silicon powder at 1200 K for 2 days designed to produce 'Ca{sub 2}SrCl{sub 2}[Si{sub 3}]'. The title compound forms next to some CaSi and some remaining educts. Ca{sub 21}SrSi{sub 24}O{sub 2} crystallizes in the monoclinic space group C2/m (no. 12) with unit cell parameters of a=1895.2(2), b=450.63(5) and c=1397.33(18) pm and β=112.008(7) (Z=1). The title compound shows planar, eight-membered, kinked Si{sub 8} chains with Si-Si distances between 241.4 and 245.0 pm indicating bonding interactions and kinked 'rope ladders' connecting the chains with interatomic Si-Si distances in the range 268.1-274.7 pm. Embedded in between these silicon substructures are columns of oxygen centered, apex sharing [(Ca{sub 1-x} Sr{sub x}){sub 6/2}O] octahedra and calcium ions.

  7. Current–voltage studies on β-FeSi2/Si heterojunction

    Indian Academy of Sciences (India)

    later treated by pulsed laser. Temperature of thermal annealing and diode area ... Silicide; semiconducting silicide; heterojunction; pulsed laser; I–V characteristics. 1. Introduction β-FeSi2 is a semiconducting silicide .... region and the electric field due to ionized impurities in Si yields a current in the opposite direction to that ...

  8. Scandium, Yttrium, and Lanthanum Benzyl and Alkynyl Complexes with the N-(2-Pyrrolidin-1-ylethyl)-1,4-diazepan-6-amido Ligand : Synthesis, Characterization, and Z-Selective Catalytic Linear Dimerization of Phenylacetylenes

    NARCIS (Netherlands)

    Ge, Shaozhong; Meetsma, Auke; Hessen, Bart

    2009-01-01

    1,4,6-Trimethyl-N-(2-pyrrolidin-1-ylethyl)-1,4-diazepan-6-amine (HL) reacts with M(CH(2)Ph)(3)(THF)(3) to give the dibenzyl complexes (L)M(CH(2)Ph)(2) (M = SC, 1; M = Y, 2; M = La, 3). Compounds 1, 2, and 3 can be converted to their corresponding cationic monobenzyl species [(L)M(CH(2)Ph)](+) (M =

  9. FY 1998 annual report on the improvement of toughness of silicide-based intermetallic compounds by controlling their composite structures; 1998 nendo fukugo soshikika ni yoru shirisaidokei kinzokukan kagobutsu no kyojinsei kaizen chosa hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Intermetallic compounds, although attracting much attention as most promising materials serviceable at superhigh temperature, are very fragile at normal temperature, which is one of their major disadvantages. Structures of these compounds prepared by the melting method are controlled to improve their toughness by, e.g., changing phase ratio of the initial crystal for the Mo-Si-Nb system to prevent cracking during the melting and casting stages, addition of a third element (e.g., Zr, Ti or Hf) or a mixed component of Nb and Zr to control the structure of Mo{sub 5}Si{sub 3} considered to be a cause for the cracking, and controlling melting and solidification rates for the FZ melting method. The three-phase microstructures with added Hf or Zr show improved toughness, but need additional procedures for controlling solidification and cooling conditions. For the powder method, the MA conditions are investigated with a two-element system, and the effects of Al or Zr as the third element added to the base composition on the composite microstructures and constituent phases are also investigated. Unlike the melting method, the powder method causes no cracking problems during the stock preparation stage and hence is expected to be applicable to production of larger stocks. However, the products by this method are found to be insufficient both in toughness and high-temperature strength. It is necessary to develop methods for cutting down and controlling oxides in the grain boundaries, in order to prevent deterioration of their strength at high temperature. (NEDO)

  10. Hydride vapor phase epitaxy growth of GaN, InGaN, ScN, and ScAIN

    NARCIS (Netherlands)

    Bohnen, T.

    2010-01-01

    Chemical vapor deposition (CVD); hydride vapor phase epitaxy (HVPE); gallium nitride (GaN); indium gallium nitride (InGaN); scandium nitride (ScN); scandium aluminum nitride (ScAlN); semiconductors; thin films; nanowires; III nitrides; crystal growth - We studied the HVPE growth of different III

  11. Thermophysical Properties of Matter - the TPRC Data Series. Volume 5. Specific Heat - Nonmetallic Solids

    Science.gov (United States)

    1970-01-01

    Chlorotrifluoromethane (see Freon 13) comide) Chloroform (CHC13) 6 166 Chromium silicides: Chloromethane (see Methyl chloride) CrSi 5 565 Chromel A (see Nichrome...V) CrS 2 5 568 Chromel P 4 392 Cr3Si 5 559 Chromium 4 44 Cr 5 Si 3 5 562 Chromium + Aluninum 4 304 Chromium silicide ( CrSi ) 5 565 Chronium i

  12. Page 1 a i. Bull. Mater. Sci., Vol. 22, No. 3, May 1999, pp. 391-397 ...

    Indian Academy of Sciences (India)

    the amorphous layer. As a result, the average grain size of C49-TiSi, is smaller which leads to lower C49- to C54-TiSi, transformation temperature. Keywords. TiSi; stress; high temperature sputtering. 1. Introduction. For self-aligned silicidation process silicides are formed on source, drain and gate regions simultaneously to ...

  13. Temperature dependence of the 1.06-microm stimulated emission cross section of neodymium in YAG and in GSGG.

    Science.gov (United States)

    Rapaport, Alexandra; Zhao, Shengzhi; Xiao, Guohua; Howard, Andrew; Bass, Michael

    2002-11-20

    A linear temperature dependence between -70 degrees C and +70 degrees C is reported for the peak stimulated emission cross section of Nd3+ ions in both yttrium aluminum garnet (YAG) and gadolinium scandium gallium garnet (GSGG).

  14. Nano-Particle Scandate Cathode for Space Communications Phase 2 Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose an improved cathode based on our novel theory of the role of scandium oxide in enhancing emission in tungsten-impregnated cathodes. Recent results have...

  15. Nano-Particle Scandate Cathode for Space Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose an improved cathode based on our novel theory of the role of scandium oxide in enhancing emission in tungsten impregnate cathodes. Recent results have...

  16. Influence of P and As implantation of the formation of MoSi2

    Science.gov (United States)

    van Ommen, A. H.; Wolters, R. A. M.

    1985-12-01

    Molybdenum disilicide films have been formed by a reaction of Mo with polycrystalline silicon. Implantation of phosphorus or arsenic prior to reaction has been shown to have a large effect on the silicidation process. The object of implantation was to enhance the silicide reaction by creating damage at the metal-silicon interface. This, then, results in silicide films with less surface roughness (and a lower electrical resistivity). Molecular P+2 ions were found to be more effective in creating damage than single P+ ions, due to the fact that for P+2 ions two simultaneous collision cascades occur which overlap. Apart from the beneficial effect of implantation damage, the introduction of phosphorus has a deleterious effect on the properties of the silicide films. This phenomenon is explained by the presence of a thin and nonuniform native oxide layer which hinders the silicide reaction. Without addition of phosphorus, new nuclei for the silicide reaction can be formed due to stress introduced by the formation of the silicide, which will act upon the oxide and cause it to break up at some weak spot. The effect of phosphorus is proposed to be that it renders the oxide more viscous which prevents this process from taking place. The x-ray diffraction spectra revealed that the orientation of the grains in the polycrystalline MoSi2 films is influenced by the method of preparation.

  17. Synthesis and Isolation of the Titanium-Scandium Endohedral Fullerenes-Sc2 TiC@Ih -C80 , Sc2 TiC@D5h -C80 and Sc2 TiC2 @Ih -C80 : Metal Size Tuning of the Ti(IV) /Ti(III) Redox Potentials.

    Science.gov (United States)

    Junghans, Katrin; Ghiassi, Kamran B; Samoylova, Nataliya A; Deng, Qingming; Rosenkranz, Marco; Olmstead, Marilyn M; Balch, Alan L; Popov, Alexey A

    2016-09-05

    The formation of endohedral metallofullerenes (EMFs) in an electric arc is reported for the mixed-metal Sc-Ti system utilizing methane as a reactive gas. Comparison of these results with those from the Sc/CH4 and Ti/CH4 systems as well as syntheses without methane revealed a strong mutual influence of all key components on the product distribution. Whereas a methane atmosphere alone suppresses the formation of empty cage fullerenes, the Ti/CH4 system forms mainly empty cage fullerenes. In contrast, the main fullerene products in the Sc/CH4 system are Sc4 C2 @C80 (the most abundant EMF from this synthesis), Sc3 C2 @C80 , isomers of Sc2 C2 @C82 , and the family Sc2 C2 n (2 n=74, 76, 82, 86, 90, etc.), as well as Sc3 CH@C80 . The Sc-Ti/CH4 system produces the mixed-metal Sc2 TiC@C2 n (2 n=68, 78, 80) and Sc2 TiC2 @C2 n (2 n=80) clusterfullerene families. The molecular structures of the new, transition-metal-containing endohedral fullerenes, Sc2 TiC@Ih -C80 , Sc2 TiC@D5h -C80 , and Sc2 TiC2 @Ih -C80 , were characterized by NMR spectroscopy. The structure of Sc2 TiC@Ih -C80 was also determined by single-crystal X-ray diffraction, which demonstrated the presence of a short Ti=C double bond. Both Sc2 TiC- and Sc2 TiC2 -containing clusterfullerenes have Ti-localized LUMOs. Encapsulation of the redox-active Ti ion inside the fullerene cage enables analysis of the cluster-cage strain in the endohedral fullerenes through electrochemical measurements. © 2016 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  18. The application of spectrographic analysis to the radioisotope production control. II. Analysis of calcium-45, scandium-46, nickel-63, and copper-64 solutions; Aplicacion del analisis espectrografico al control de produccion de radioisotopos. II. Analisis de soluciones de calcio-45, escandio-46, niquel-63 y cobre-64

    Energy Technology Data Exchange (ETDEWEB)

    Capdevila, C.; Roca, M.

    1972-07-01

    Semi-quantitative and quantitative determinations of both the radioactive and the target element in each radioisotope are described. The copper-spark technique was used except for Cu determinations, that need silver or.graphite electro des. Inter-element effects and their compensation through the use of Bi, 6a, In, Ho, Pd, TI and Y as reference elements was examined. For the determination of Ca in Ca-45 samples, Ba, La, Li and Sr were also tested. Good results are achieved with Li for Ca, Y for Sc,Ti and Ni, and either In or Y for Cu and Zn. (Author) 7 refs.

  19. Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

    National Research Council Canada - National Science Library

    Noor Faizah, Z.A; Ahmad, Ibrahim; Ker, P.J; Siti Munirah, Y; Mohd Firdaus, R; Md. Fazle, E; Menon, P. S

    2016-01-01

    ... (WSi2) and Titanium Silicide (TiSi2) as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module...

  20. On the microstructure and interfacial properties of sputtered nickel ...

    Indian Academy of Sciences (India)

    SEM) and atomic force microscope (AFM) revealed columnar morphology with voided boundaries for films deposited at room temperature and was retained after post-deposition annealing at higher temperatures. Nickel silicide formation with ...

  1. Advanced Materials and Manufacturing for Low-Cost, High-Performance Liquid Rocket Combustion Chambers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicided niobium alloy (C103) combustion chambers have been used extensively in both NASA and DoD liquid rocket propulsion systems. Niobium alloys offer a good...

  2. EVALUATION OF THERMAL PROTECTIVE SYSTEMS FOR ADVANCED AEROSPACE VEHICLES. VOLUME II: APPENDICES.

    Science.gov (United States)

    AEROSPACE CRAFT, TABLES(DATA), GRAPHICS, OXIDES, BERYLLIUM, HAFNIUM COMPOUNDS, SPINEL, ZIRCONIUM COMPOUNDS, NITRIDES, CARBIDES, BORIDES , SILICIDES...GRAPHITE, NIOBIUM, MOLYBDENUM , TANTALUM, TUNGSTEN, THERMAL PROPERTIES, THERMAL PROPERTIES, SPECIFIC HEAT.

  3. Lightweight Ultrahigh Temperature CMC-Lined C/C Combustion Chambers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA and DoD are seeking economical and high-performance bipropellant thrusters for various applications. These goals cannot be achieved using the silicided C103...

  4. Advanced Materials and Manufacturing for Low-Cost, High-Performance Liquid Rocket Combustion Chambers, Phase II Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicided niobium alloy (C103) combustion chambers have been used extensively in both NASA and DoD liquid rocket propulsion systems. Niobium alloys offer a good...

  5. Electronic and chemical structure of metal-silicon interfaces

    Science.gov (United States)

    Grunthaner, P. J.; Grunthaner, F. J.

    1984-01-01

    This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

  6. Metallization of Large Silicon Wafers

    Science.gov (United States)

    Pryor, R. A.

    1978-01-01

    A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

  7. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

    Science.gov (United States)

    Kal, S.; Kasko, I.; Ryssel, H.

    1995-10-01

    The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

  8. Surface electronic structure of rare earth metals

    Energy Technology Data Exchange (ETDEWEB)

    Blyth, R.I.R.; Dhesi, S.S.; Gravil, P.A.; Newstead, K.; Cosso, R.; Cole, R.J.; Patchett, A.J.; Mitrelias, T. (Surface Science Research Centre, Univ. of Liverpool (United Kingdom)); Prince, N.P.; Barrett, S.D. (Surface Science Research Centre, Univ. of Liverpool (United Kingdom) Oliver Lodge Lab., Univ. of Liverpool (United Kingdom))

    1992-03-25

    Angle-resolved UV photoemission has been used to investigate the electronic structure of the (0001) surfaces of scandium, yttrium, praseodymium and gadolinium. Off-normal emission spectra were recorded with high angular resolution, enabling detailed mapping of the dispersion of valence band features. Yttrium and gadolinium show similar results to published data from Ho(0001), suggesting minimal 4f influence in the lanthanide bandstructures. Differences seen on praseodymium and scandium may be due to 4f-derived states and surface states respectively. (orig.).

  9. Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

    Science.gov (United States)

    Kolel-Veetil, Manoj K.; Keller, Teddy M.

    2010-01-01

    The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, α-FeSi2 and β-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR). The silicon-rich β-FeSi2 is a direct band gap material usable in light emitting diode (LED) applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM) of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe)-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

  10. Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

    Directory of Open Access Journals (Sweden)

    Teddy M. Keller

    2010-02-01

    Full Text Available The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, a-FeSi2 and b-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR. The silicon-rich b-FeSi2 is a direct band gap material usable in light emitting diode (LED applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

  11. Physical properties of some noble metal compounds from PAW-DFT ...

    African Journals Online (AJOL)

    The heats of formation, shear modulus, fracture toughness, density and melting points of compounds formed between some noble metals and aluminum, scandium, hafnium and zirconium were evaluated by the ab initio quantum mechanical projector augmented wave (PAW) calculation methods, using the Density ...

  12. Understanding the structure and electronic properties of N-doped ...

    Indian Academy of Sciences (India)

    Structures and electronic properties of zigzag graphene nanoribbon (ZGNR) with pyridine (3NVZGNR) functionalized by Scandium (Sc) at the edge were studied through quantum chemical calculations in the formalism of density-functional theory (DFT). Pyridine-like nitrogen defects is very crucial for enhancing the Sc atom ...

  13. Critical metals (REE, Sc, PGE) in Ni laterites from Cuba and the Dominican Republic

    Czech Academy of Sciences Publication Activity Database

    Aiglsperger, T.; Proenza, J. A.; Lewis, J. F.; Labrador, M.; Svojtka, Martin; Rojas-Purón, A.; Longo, F.; Ďurišová, Jana

    2016-01-01

    Roč. 73, March 01 (2016), s. 127-147 ISSN 0169-1368 Institutional support: RVO:67985831 Keywords : Caribbean * Cuba * Dominican Republic * Falcondo mining area * Moa Bay mining area * Ni laterite * Platinum Group Elements * Rare Earth Elements * Scandium Subject RIV: DB - Geology ; Mineralogy Impact factor: 3.095, year: 2016

  14. Efficient conversion of triacylglycerols and fatty acids to biodiesel in a microwave reactor using metal triflate catalysts.

    Science.gov (United States)

    Socha, Aaron M; Sello, Jason K

    2010-10-21

    We report that catalytic quantities of the Lewis acidic metal catalysts scandium triflate and bismuth triflate promote conversion of oleic, linoleic, palmitic and myristic acids and their glyceryl triesters to the corresponding methyl esters (biodiesel) in greater than 90% yield upon microwave heating. Additionally, both catalysts could be recovered and reused in esterification reactions at least six times.

  15. Effect of structural imperfections on lasing characteristics of diode-pumped YVO{sub 4}, GdVO{sub 4} and mixed rare-earth vanadate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Orlova, G Yu; Vlasov, V I; Zavartsev, Yu D; Zagumennyi, A I; Kalashnikova, I I; Kutovoi, S A; Naumov, V S; Sirotkin, A A

    2012-03-31

    The efficiency of diode-pumped lasers with gain elements made from yttrium, gadolinium, yttrium - gadolinium and yttrium - scandium orthovanadate crystals has been shown for the first time to be influenced by structural imperfections (quality) of the crystals. This allows one to predict lasing parameters of such crystals in a preliminary step, without fabricating gain elements.

  16. Sc-45 nuclear magnetic resonance analysis of precipitation in dilute Al-Sc alloys

    NARCIS (Netherlands)

    Celotto, S; Bastow, TJ

    Nuclear magnetic resonance (NMR) with Sc-45 is used to determine the solid solubility of scandium in aluminium and to follow the precipitation of Al3Sc during the ageing of an Al-0.06 at.% Sc alloy via the two fully resolved peaks, corresponding to Sc in the solid solution Al matrix and to Sc in the

  17. Intercombination lines of AlVIII, AlIX, and AlX ions

    Science.gov (United States)

    Denne, B.; Hinnov, E.

    1984-06-01

    Several aluminum lines observed in the Princeton Large Torus tokamak discharges have been identified as intersystem transitions, establishing the energies of the Al VIII 2s2p35S, Al IX 2s2p24P, and Al X 2s2p3P terms. Some observations of isoelectronic transitions in scandium and titanium ions are also reported.

  18. physical properties of some noble metal compounds from paw-dft ...

    African Journals Online (AJOL)

    PUBLICATIONS1

    ABSTRACT. The heats of formation, shear modulus, fracture toughness, density and melting points of com- pounds formed between some noble metals and aluminum, scandium, hafnium and zirconium were evaluated by the ab initio quantum mechanical projector augmented wave (PAW) calcula- tion methods, using the ...

  19. Surface roughness and morphologic changes of zirconia: Effect of ...

    African Journals Online (AJOL)

    Purpose: The purpose of this study was to investigate the surface roughness and morphologic changes of pre.sintered ZrO2 after sandblasting and erbium, chromium: Yttrium, scandium, gallium, garnet (Er, Cr: YSGG) laser application of different intensities. Material and Methods: Eighty pre-sintered ZrO2 cylinders (7 mm ...

  20. Contamination assessment of toxic elements in the soil within and ...

    African Journals Online (AJOL)

    Scandium, vanadium and strontium were only present in the active dumpsite with minimum enrichment while Lanthanum was present only in the abandoned dumpsite with background enrichment. The geo-accumulation index (Igeo) values for arsenic, chromium, molybdenum, manganese, lanthanum and arsenic, strontium ...

  1. RARE EARTH ELEMENTS: A REVIEW OF PRODUCTION, PROCESSING, RECYCLING, AND ASSOCIATED ENVIRONMENTAL ISSUES

    Science.gov (United States)

    Rare earth elements (REEs) are a group of 15 chemical elements in the periodic table, specifically the lanthanides. Two other elements, scandium and yttrium, have a similar physiochemistry to the lanthanides, are commonly found in the same mineral assemblages, and are often refe...

  2. Faraday isolator based on TSAG crystal for high power lasers.

    Science.gov (United States)

    Mironov, E A; Palashov, O V

    2014-09-22

    A Faraday isolator based on a new magneto-optical medium, TSAG (terbium scandium aluminum garnet) crystal, has been constructed and investigated experimentally. The device provides an isolation ratio of more than 30 dB at 500 W laser power. It is shown that this medium can be used in Faraday isolators for kilowatt-level laser powers.

  3. Neutron-Activation Analysis of Biological Material with High Radiation Levels

    Energy Technology Data Exchange (ETDEWEB)

    Samsahl, K.

    1966-09-15

    A method has been developed for the chemical separation and subsequent gamma-spectrometric analysis of the alkali metals, the alkaline earths, the rare earths, chromium, hafnium, lanthanum, manganese, phosphorus, scandium and silver in neutron-activated biological material. The separation steps, being fully automatic, are based on a combination of ion-exchange and partition chromatography and require 40 min.

  4. Popoola & Bello (12)

    African Journals Online (AJOL)

    big timmy

    The effects of the substitution of aluminum or scandium on the density, toughness as well as the stability of the phases formed by such an addition on platinum, iridium, rhodium and palladium metals were evaluated with the density functional quantum mechanical calculation methods. All the metals had four atoms per ...

  5. Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

    OpenAIRE

    Noor Faizah Z.A.; Ahmad Ibrahim; Ker P.J.; Siti Munirah Y.; Mohd Firdaus R.; Md. Fazle E.; Menon P. S.

    2016-01-01

    This paper presents the modeling and optimization of 14nm gate length CMOS transistor which is down-scaled from previous 32nm gate length. High-k metal gate material was used in this research utilizing Hafnium Dioxide (HfO2) as dielectric and Tungsten Silicide (WSi2) and Titanium Silicide (TiSi2) as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module; both in Virtual Wafer Fabricati...

  6. Electronic structure of erbium suicide ultra-thin films

    Science.gov (United States)

    Veuillen, J.-Y.; Tan, T. A. Nguyen; Lollman, D. B. B.

    1993-08-01

    The electronic structure of erbium silicide ultra-thin films epitaxially grown on Si(111) has been studied by means of angle-resolved ultra-violet photoemission spectroscopy (ARUPS) in the coverage range 0.2-4 monolayers (ML). Some peaks probably related to the silicide surface atomic structure are observed at any coverage. Features that appear at normal emission in connection with an R3 superstructure are ascribed to vacancy-induced states in the silicon surface plane. No true interface states could be identified in this study.

  7. Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

    Science.gov (United States)

    Grunthaner, P. J.; Grunthaner, F. J.; Madhukar, A.

    1982-01-01

    Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

  8. Page 1 Bull. Mater. Sci., Vol. 18, No. 5, September 1995, pp. 531 ...

    Indian Academy of Sciences (India)

    Both decrease in device dimensions and a drive for very high speed have increased the demand for improved interconnects with low resistanceſcapacitance (RC) coupling. Thin films of refractory metal silicides have been the subject of much interest in recent years owing to their widespread use as contact materials in VLSI.

  9. Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction

    KAUST Repository

    Wang, Qingxiao

    2010-07-01

    Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.

  10. Atomic Structure Studies of Semiconductor-Electrolyte, Metal and Vacuum Interfaces.

    Science.gov (United States)

    1982-01-12

    Channeling Studies of Metal Interaction with Silicon R. Haight, T. Itoh, T. Narusawa, W.M. Gibson and A. Hiraki Epitaxial Growth of Germanium on Si(lll...Stages of Metal-Silicide Formation (Invited Paper) A. Hiraki , T. Narusawa and W.M. Gibson 44 American Physical Society, Dallas, TX, March 1982 Structure

  11. Fabrication and microstructural analysis of UN-U{sub 3}Si{sub 2} composites for accident tolerant fuel applications

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Kyle D., E-mail: kylej@kth.se; Raftery, Alicia M.; Lopes, Denise Adorno; Wallenius, Janne

    2016-08-15

    In this study, U{sub 3}Si{sub 2} was synthesized via the use of arc-melting and mixed with UN powders, which together were sintered using the SPS method. The study revealed a number of interesting conclusions regarding the stability of the system – namely the formation of a probable but as yet unidentified ternary phase coupled with the reduction of the stoichiometry in the nitride phase – as well as some insights into the mechanics of the sintering process itself. By milling the silicide powders and reducing its particle size ratio compared to UN, it was possible to form a high density UN-U{sub 3}Si{sub 2} composite, with desirable microstructural characteristics for accident tolerant fuel applications. - Highlights: • U{sub 3}Si{sub 2} fabricated from elemental uranium and silicon through arc melting. • Homogeneity of the silicides assessed through densitometry, XRD, SEM and EDS, chemical etching and optical microscopy. • UN powder fabricated using hydriding-nitriding method. • No phase transformations detected when sintering using silicide particle sizes less than UN particle size. • High density composite (98%TD) fabricated with silicide grain coating using spark plasma sintering at 1450 °C.

  12. Charge plasma diode - a novel device concept

    NARCIS (Netherlands)

    Rajasekharan, B.; Hueting, Raymond Josephus Engelbart; Salm, Cora; Hoang, T.; Schmitz, Jurriaan

    2008-01-01

    We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body

  13. Contact and Alignment Marker Technology for Atomic Scale Device Fabrication

    NARCIS (Netherlands)

    Zuiddam, M.R.; Rogge, S.; Drift, E. van der; Ilge, B.; Palasantzas, G.

    1998-01-01

    This article reports on the technology to link atomic scale structures to macroscopic contact pads. Dedicated processes for electrode pattern formation in several materials have been developed and characterised. For pattern formation in CoSi2 a thermal compromise between proper silicide formation

  14. Microwave synthesis of electrode materials for lithium batteries

    Indian Academy of Sciences (India)

    Unknown

    Bi4B2O9 have been used as cathodes (Jones and Akridge. 1995). ... reactive, is a superb secondary heater (Vaidhyanathan et al 1997). Researches at our laboratory and elsewhere have demonstrated the use of microwaves in the synthesis of a wide ... 1997a), silicides (Vaidhyanathan and Rao 1997b), borides. (Mingos ...

  15. High-temperature stability of yttria-stabilized zirconia thermal barrier ...

    Indian Academy of Sciences (India)

    bustor and vehicle acreage applications [19–21]. However, silicide coatings are generally used for oxidation ... Since, Nb alloys are being used for these applications, TBC with a prior bond coat is essential for better ..... ing; notwithstanding the bond coat mitigates the thermal mis- match between the metal substrate and YSZ ...

  16. DEVELOPMENT OF A HIGH TEMPERATURE LIQUID METAL SOLUTION CALORIMETER.

    Science.gov (United States)

    alloys and many inorganic compounds, including such materials as steels, refractory metal alloys, carbides, borides , and silicides. Because of the high...alumina is used for other parts. Heat is supplied through molybdenum wire resistance windings and controlled by a proportioning controller. Temperatures

  17. 78 FR 40131 - Proposed Subsequent Arrangement

    Science.gov (United States)

    2013-07-03

    ... concerns the retransfer of 86 kg of U.S.-origin uranium, 17 kg of which is in the isotope of U-235 (19.74 percent enrichment), in the form of low enriched uranium-silicide Open Pool ] Australian Lightwater (OPAL...

  18. Page 1 602 Material synthesis A simple hydrothermal cell for ...

    Indian Academy of Sciences (India)

    graphy 231. Metal-oxide semiconductor. Growth of polysilicon and silicide films for. MOS-VLSI application 297. Microcrystalline. Electron microscopy study of chemically depo- sited Ni-P films . 433. Microstrip. Microstrip losses with Al2O overlay 535. Microstrip rejection filter. Effect of bulk and thin film dielectric overlay on.

  19. Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

    Energy Technology Data Exchange (ETDEWEB)

    Wzorek, M., E-mail: mwzorek@ite.waw.pl; Czerwinski, A.; Borysiewicz, M.A.; Gołaszewska, K.; Myśliwiec, M.; Ratajczak, J.; Piotrowska, A.; Kątcki, J.

    2015-09-15

    Highlights: • Thin Ni–Si layers on SiC were studied after annealing. • Different types of microstructural defects occur depending on Ni:Si ratio. • Mechanisms leading to morphology degradation are discussed. • Presented method improves the microstructure of ohmic contacts to SiC. - Abstract: The new approach to fabrication process of nickel-based ohmic contacts to silicon carbide (SiC) is presented. During the first annealing step (300 °C), the amorphous Ni–Zr layer retards diffusion between two nickel silicide layers, thus handling the contradictory requirements for optimal Ni:Si ratio. Different stoichiometry obtained in each silicide layer allows to preserve smooth interface with SiC and simultaneously to avoid relatively easily meltable Si-rich Ni–Si phases during high temperature annealing (1000 °C) and therefore prevents morphology degradation. After annealing at 1000 °C only one final nickel silicide layer is present and Zr atoms are agglomerated at its surface. Morphology of the final silicide layer is substantially improved when compared to typical Ni-based contacts obtained by similar high-temperature annealings. The improved microstructure of the ohmic contact is a promising advantage in terms of SiC devices reliability.

  20. An Incommensurately Modulated Structure of eta '-Phase of Cu3+xSi Determined by Quantitative Electron Diffraction Tomography

    Czech Academy of Sciences Publication Activity Database

    Palatinus, L.; Klementová, Mariana; Dřínek, V.; Jarošová, M.; Petříček, V.

    2011-01-01

    Roč. 50, č. 8 (2011), s. 3743-3751 ISSN 0020-1669 R&D Projects: GA ČR GA203/09/1088 Institutional research plan: CEZ:AV0Z40320502 Keywords : copper silicide * incommensurate structure * electron diffraction tomography * ab inition structure solution * superspace Subject RIV: CA - Inorganic Chemistry Impact factor: 4.601, year: 2011

  1. Gap-closing test structures for temperature budget determination

    NARCIS (Netherlands)

    Faber, Erik Jouwert; Wolters, Robertus A.M.; Schmitz, Jurriaan

    2011-01-01

    We present the extension of a method for determining the temperature budget of the process side of silicon substrates and chips, employing silicide formation reactions. In this work, silicon-on-insulator type substrates are used instead of bulk silicon wafers. By an appropriate choice of the layer

  2. Characterization of electroless nickel as a seed layer for silicon solar ...

    Indian Academy of Sciences (India)

    based solar cell metallization. Nickel silicide formation and hence contact resistivity of the interface is largely influenced by the plating process and annealing conditions. In the present work, a thin seed layer is deposited from neutral pH and ...

  3. Structural and electrical properties of swift heavy ion beam irradiated ...

    Indian Academy of Sciences (India)

    Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the ...

  4. Substrate bias voltage and deposition temperature dependence on ...

    Indian Academy of Sciences (India)

    ... on Si (100) substrate. Deposition at higher substrate temperature causes the film to react with Si forming silicides at the film/Si substrate interface. Ti film undergoes a microstructural transition from hexagonal plate-like to round-shaped grains as the substrate temperature was raised from 300 to 50 °C during film deposition ...

  5. Toward a better understanding of the magnetocaloric effect: An experimental and theoretical study of MnFe.sub.4./sub.Si.sub.3./sub..

    Czech Academy of Sciences Publication Activity Database

    Gourdon, O.; Gottschlich, G.; Persson, J.; de la Cruz, C.; Petříček, Václav; McGuire, M.A.; Bruckel, T.

    2014-01-01

    Roč. 216, AUG (2014), s. 56-64 ISSN 0022-4596 Grant - others:AV ČR(CZ) Praemium Academiae Institutional support: RVO:68378271 Keywords : magneto caloric effect materials * intermetallic * silicide * magnetism * neutron diffraction * density functional theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.133, year: 2014

  6. The study of inorganic scintillating materials

    Science.gov (United States)

    Dudkin, G. N.; Kuznetsov, S. I.; Padalko, V. N.; Syrtanov, M. S.

    2017-05-01

    The procedure for measuring the temporal characteristics and light output of inorganic scintillating materials excited by β-, γ-, and α-particles from radioactive sources is described. Results of measurements of characteristics are presented for ∼30 scintillating compounds including cerium-doped yttrium silicate and scandium borate; europium-doped strontium phosphate; cerium-doped strontium silicate, calcium silicate and magnesium calcium silicate, etc. Upon β- and γ-excitation, cerium-doped scandium borate gives the highest light output with a fluorescent lifetime of 40 ± 4 ns. The highest light output for α-excitation was from cerium-doped yttrium aluminum perovskite, with a fluorescent lifetime of 29 ± 3 ns.

  7. Synthesis and crystal structure of the first Sc-Nb-O-N phases

    Energy Technology Data Exchange (ETDEWEB)

    Orthmann, Steven; Lerch, Martin [Institut fuer Chemie, Technische Universitaet Berlin (Germany)

    2017-11-17

    Synthesis of phase-pure materials in the system Sc-Nb-O-N is challenging. In this contribution we report on the preparation of the first scandium niobium oxide nitrides via reaction of water-saturated gaseous ammonia or an ammonia-oxygen mixture with amorphous scandium niobium oxides. Two new phases were obtained: rutile-type ScNb{sub 4}O{sub 7}N{sub 3}, which crystallizes in space group P4{sub 2}/mnm, and an anion-deficient fluorite-type Sc{sub 2}Nb(O,N,⬜){sub 6} phase crystallizing in space group Fm anti 3m. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Stress controlled pulsed direct current co-sputtered Al1−xScxN as piezoelectric phase for micromechanical sensor applications

    Directory of Open Access Journals (Sweden)

    Simon Fichtner

    2015-11-01

    Full Text Available Scandium alloyed aluminum nitride (Al1−xScxN thin films were fabricated by reactive pulsed direct current co-sputtering of separate scandium and aluminum targets with x ≤ 0.37. A significant improvement of the clamped transversal piezoelectric response to strain e31,f from −1.28 C/m2 to −3.01 C/m2 was recorded, while dielectric constant and loss angle remain low. Further, the built-in stress level of Al1−xScxN was found to be tuneable by varying pressure, Ar/N2 ratio, and Sc content. The thus resulting enhancement of the expectable signal to noise ratio by a factor of 2.1 and the ability to control built-in stress make the integration of Al1−xScxN as the piezoelectric phase of micro-electro-mechanical system sensor applications highly attractive.

  9. Activated production of silent metabolites from marine-derived fungus Penicillium citrinum.

    Science.gov (United States)

    Gu, Yuqin; Ding, Peiyu; Liang, Zhipeng; Song, Yan; Liu, Yonghong; Chen, Guangtong; Li, Jian Lin

    2018-02-20

    As an attempt to utilize of rare earth elements as a novel method to activate the silent genes in fungus, the marine-derived fungus Penicillium citrinum was cultured under ordinary laboratory fermentation conditions in the presence of scandium chloride (ScCl 3 , 50 μM), and chemical investigation led to the isolation and characterization of three new peptide derivatives (1-3), along with four known pyrrolidine alkaloids (4-7). Those structures were elucidated by spectroscopic data interpretation, as well as chemical reactions. Comparative metabolic profiling of the culture extracts (with/without scandium chloride) indicated that compounds 1-3 scarcely detected in the absence of ScCl 3 . In addition, the antibacterial and cytotoxic activities of all isolated products were evaluated. Copyright © 2017. Published by Elsevier B.V.

  10. Preparation and characterization of Sc doped MgB2 wires

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Burdusel, M.

    2016-01-01

    The in-situ technique was used to manufacture scandium (Sc) doped MgB2 wires in a composite Cu–Nb sheath. After reaction at 700 °C, at most 1 at.% Mg was replaced by Sc in the MgB2 phase, without significant influence on its superconducting transition temperature. For higher Sc concentrations in ...... of the precursor powders revealed by DTA measurements than to actual doping. The best performance was obtained in a wire with Mg:Sc = 0.995_0.005 atomic ratio.......The in-situ technique was used to manufacture scandium (Sc) doped MgB2 wires in a composite Cu–Nb sheath. After reaction at 700 °C, at most 1 at.% Mg was replaced by Sc in the MgB2 phase, without significant influence on its superconducting transition temperature. For higher Sc concentrations...

  11. New Volleyballenes: Y20C60, La20C60, and Lu20C60

    OpenAIRE

    Wang, Jing; Liu, Ying

    2015-01-01

    New stable Volleyballenes Y20C60, La20C60, and Lu20C60 molecular clusters have been proposed using first-principles density functional theory studies. In conjunction with recent findings for the scandium system, these findings establish Volleyballene M20C60 molecules as a stable general class of fullerene family. All M20C60 (M=Y, La, and Lu) molecules have Th point group symmetries and relatively large HOMO-LUMO gaps.

  12. Browse Title Index

    African Journals Online (AJOL)

    Items 501 - 550 of 1605 ... Vol 18, No 4 (2015), Effects of edentulism in obstructive sleep apnea syndrome, Abstract PDF. R Okşayan, O Sökücü, M Uyar, T Topçuoğlu. Vol 18, No 2 (2015), Effects of erbium‑and chromium‑doped yttrium scandium gallium garnet and diode lasers on the surfaces of restorative dental materials: A ...

  13. New Volleyballenes: Y20C60 and La20C60

    OpenAIRE

    Jing Wang; Ying Liu

    2016-01-01

    Two new stable Volleyballenes, the Y20C60 and La20C60 molecular clusters, are proposed on the basis of first-principles density functional theory. In conjunction with recent findings for the scandium system, these findings establish Volleyballene M 20C60 molecules as a general class of stable molecules within the fullerene family. Both Y20C60 and La20C60 molecules have T h point group symmetries and relatively large HOMO-LUMO gaps.

  14. Treatment of oral submucous fibrosis with ErCr: YSGG laser

    Directory of Open Access Journals (Sweden)

    Zainab Chaudhary

    2011-01-01

    Full Text Available Oral submucous fibrosis (OSMF is one of the most poorly understood and unsatisfactorily treated diseases. Various medical and surgical treatments have been used but with limited benefits. However, with advent of lasers, oral surgeons are provided with new modality for treating OSMF. This case report highlights the pioneering effort in treating a moderate case of bilateral OSMF with Erbium Chromium Yttrium Scandium Gallium Garnet (ErCr:YSGG laser showing promising result during follow-up.

  15. Annual reports in inorganic and general syntheses 1974

    CERN Document Server

    Niedenzu, Kurt

    1975-01-01

    Annual Reports in Inorganic and General Syntheses-1974 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book discusses the chemistry of simple and complex metal hydrides of main groups I, II, and III, boron, aluminium, gallium, indium, thallium, silicon, germanium, tin, lead, phosphorus, arsenic, antimony, bismuth, chalcogens, halogens, and pseudohalogens. The text also describes the chemistry of scandium, yttrium, lanthanides, actinides, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, ma

  16. Annual reports in inorganic and general syntheses 1972

    CERN Document Server

    Niedenzu, Kurt

    1973-01-01

    Annual Reports in Inorganic and General Syntheses-1972 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book discusses alkali and alkaline earth elements, alloys, silver, gold, zinc, cadmium, mercury, boron, aluminum, gallium, indium, thallium, yttrium, scandium, lanthanides, actinides, titanium, zirconium, hafnium, Group V and VI transition elements, manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, osmium, rhodium, and iridium. The text also describes the chemistry of palladium, platinum, silicon, germanium, tin,

  17. Organization of the Topical Meeting on Tunable Solid State Lasers Held in North Falmouth, Massachusetts on 1-3 May 1989

    Science.gov (United States)

    1989-08-30

    section can be compared to the cross-section obtained for Cr(III) in gallium scandium gadolinium garnet (GSGG) at 756 nm, which is 0.7 Pm 2 [12], and for...p. 34) ME1 Laser Performance of Chromium- Aluminum Doped Forsterite, Horacio R. Verdun, Leonard M. Thomas, Donna M. 11:30 AM (Invited Paper...Chromium- aluminum gaussian Mirrors, G. Cerullo, V. Magni, R. Riva, 0. Svelto, doped forsterite, prepared by laser-heated pedestal growth, Polytechnic U

  18. Metal organic frameworks for gas storage

    KAUST Repository

    Alezi, Dalal

    2016-06-09

    Embodiments provide a method of storing a compound using a metal organic framework (MOF). The method includes contacting one or more MOFs with a fluid and sorbing one or more compounds, such as O2 and CH4. O2 and CH4 can be sorbed simultaneously or in series. The metal organic framework can be an M-soc-MOF, wherein M can include aluminum, iron, gallium, indium, vanadium, chromium, titanium, or scandium.

  19. Arctic deep-water ferromanganese-oxide deposits reflect the unique characteristics of the Arctic Ocean

    Science.gov (United States)

    Hein, James; Konstantinova, Natalia; Mikesell, Mariah; Mizell, Kira; Fitzsimmons, Jessica N.; Lam, Phoebe; Jensen, Laramie T.; Xiang, Yang; Gartman, Amy; Cherkashov, Georgy; Hutchinson, Deborah; Till, Claire P.

    2017-01-01

    Little is known about marine mineral deposits in the Arctic Ocean, an ocean dominated by continental shelf and basins semi-closed to deep-water circulation. Here, we present data for ferromanganese crusts and nodules collected from the Amerasia Arctic Ocean in 2008, 2009, and 2012 (HLY0805, HLY0905, HLY1202). We determined mineral and chemical compositions of the crusts and nodules and the onset of their formation. Water column samples from the GEOTRACES program were analyzed for dissolved and particulate scandium concentrations, an element uniquely enriched in these deposits.The Arctic crusts and nodules are characterized by unique mineral and chemical compositions with atypically high growth rates, detrital contents, Fe/Mn ratios, and low Si/Al ratios, compared to deposits found elsewhere. High detritus reflects erosion of submarine outcrops and North America and Siberia cratons, transport by rivers and glaciers to the sea, and distribution by sea ice, brines, and currents. Uniquely high Fe/Mn ratios are attributed to expansive continental shelves, where diagenetic cycling releases Fe to bottom waters, and density flows transport shelf bottom water to the open Arctic Ocean. Low Mn contents reflect the lack of a mid-water oxygen minimum zone that would act as a reservoir for dissolved Mn. The potential host phases and sources for elements with uniquely high contents are discussed with an emphasis on scandium. Scandium sorption onto Fe oxyhydroxides and Sc-rich detritus account for atypically high scandium contents. The opening of Fram Strait in the Miocene and ventilation of the deep basins initiated Fe-Mn crust growth ∼15 Myr ago.

  20. Treatment of amalgam tattoo with an Er,Cr:YSGG laser.

    Science.gov (United States)

    Yilmaz, Hasan Guney; Bayindir, Hakan; Kusakci-Seker, Basak; Tasar, Simge; Kurtulmus-Yilmaz, Sevcan

    2010-08-01

    Amalgam tattoos are common, asymptomatic, pigmented oral lesions that clinically exist as isolated, blue, gray, or black macules on the gingival, buccal, and alveolar mucosae, the palate, and/or the tongue. In this case report, the successful use of an erbium, chromium-doped:yttrium, scandium, gallium, and garnet laser for the removal of an amalgam tattoo is explained. A 46-year-old man is presented with a half decade history of an amalgam tattoo on his left maxillary premolar-molar gingiva. Depigmentation procedure was performed under topical anesthesia with the use of an erbium, chromium-doped:yttrium, scandium, gallium, and garnet laser at 2 W in the soft tissue pulsed mode for 10 min. The pigmented tissue was completely removed. The de-epithelialization area healed completely on the 10th day after treatment. The period of healing was uneventful. The amalgam tattoo was completely removed with erbium, chromium-doped:yttrium, scandium, gallium, and garnet laser, and the treated area healed without any adverse effect. © 2010 Blackwell Publishing Asia Pty Ltd.

  1. The effect of alloying on the ordering processes in near-alpha titanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Popov, Artemiy, E-mail: p.artemii@mail.ru [Ural Federal University named after the first President of Russia B.N. Yeltsin, 19 Mira Street, Ekaterinburg 620002 (Russian Federation); Rossina, Natalya [Ural Federal University named after the first President of Russia B.N. Yeltsin, 19 Mira Street, Ekaterinburg 620002 (Russian Federation); Popova, Maria, E-mail: pmaria777@mail.ru [Ural Federal University named after the first President of Russia B.N. Yeltsin, 19 Mira Street, Ekaterinburg 620002 (Russian Federation)

    2013-03-01

    The substructure of near-alpha Ti–Al–Sn–Zr–Mo–Si alloys containing up to 12.5 at% aluminum was studied by transmission electron microscopy (TEM). It was shown that long-range order sections are formed at aging temperatures up to 500 °C in alloys, high in aluminum, and the ordered phase is formed by the nucleation and growth mechanism at 700 °C aging temperatures. Causes of changing the phase transformation mechanism have been discussed, and the relationship between the structure and properties of alloys, depending on modes of heat treatment has been analyzed. Also the influence of aluminides and silicides precipitation on the mechanical alloy properties after aging was examined. It was shown that the aluminide formation led to a slight hardening and a significant viscosity decrease. The silicide particles formation reduced the heat resistance properties, due to the depletion of the solid solution by silicon.

  2. All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

    Science.gov (United States)

    Taghizadeh, Alireza; Zali, Aref Rasoulzadeh; Chung, Il-Sug; Moravvej-Farshi, Mohammad Kazem

    2017-09-01

    We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelength grating structure topped with a silicide layer of nanometers thickness as an absorbing material. It is shown that a nearly-perfect light absorption is possible for the thin silicide layer by its integration to the grating resonator. The absorption is shown to be maximized when the critical coupling condition is satisfied. Simulations show that the external quantum efficiency of the proposed photodetector with a 2-nm-thick PtSi absorbing layer at the center wavelength of 1550 nm can reach up to ˜60%.

  3. Nanoamorphous carbon-based photonic crystal infrared emitters

    Science.gov (United States)

    Norwood, Robert A [Tucson, AZ; Skotheim, Terje [Tucson, AZ

    2011-12-13

    Provided is a tunable radiation emitting structure comprising: a nanoamorphous carbon structure having a plurality of relief features provided in a periodic spatial configuration, wherein the relief features are separated from each other by adjacent recessed features, and wherein the nanoamorphous carbon comprises a total of from 0 to 60 atomic percent of one or more dopants of the dopant group consisting of: transition metals, lanthanoids, electro-conductive carbides, silicides and nitrides. In one embodiment, a dopant is selected from the group consisting of: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La and other lanthanides, Hf, Ta, W, Rh, Os, Ir, Pt, Au, and Hg. In one embodiment, a dopant is selected from the group consisting of: electro-conductive carbides (like Mo.sub.2C), silicides (like MoSi.sub.2) and nitrides (like TiN).

  4. Isothermal and cyclic oxidation resistance of pack siliconized Mo-Si-B alloy

    Science.gov (United States)

    Majumdar, Sanjib

    2017-08-01

    Oxidation behaviour of MoSi2 coated Mo-9Si-8B-0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi2 layer during thermal cycling. The dominant oxidation mechanisms at 750-900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

  5. Accident-tolerant oxide fuel and cladding

    Science.gov (United States)

    Mariani, Robert D.

    2017-05-30

    Systems and methods for accident tolerant oxide fuel. One or more disks can be placed between fuel pellets comprising UO.sub.2, wherein such disks possess a higher thermal conductivity material than that of the UO.sub.2 to provide enhanced heat rejection thereof. Additionally, a cladding coating comprising zircaloy coated with a material that provides stability and high melting capability can be provided. The pellets can be configured as annular pellets having an annulus filled with the higher thermal conductivity material. The material coating the zircaloy can be, for example, Zr.sub.5Si.sub.4 or another silicide such as, for example, a Zr-Silicide that limits corrosion. The aforementioned higher thermal conductivity material can be, for example, Si, Zr.sub.xSi.sub.y, Zr, or Al.sub.2O.sub.3.

  6. Process-oriented microstructure evolution of V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}; Prozessabhaengige Mikrostrukturausbildung von V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}-Werkstoffen

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Manja; Koeppe-Grabow, Birte [Magdeburg Univ. (Germany)

    2017-05-15

    Vanadium silicide alloys are potentially interesting high temperature materials, since they combine high mechanical strength at temperatures of up to 1 000 C with a low density. In this study, the microstructures of innovative V-Si-B high temperature materials are examined using different analytical methods. The selected V-9Si-13B model alloy was manufactured using a powder metallurgical process route as well as an ingot metallurgical process. The alloys show a vanadium solid solution phase as well as the high-strength silicide phases V{sub 3}Si and V{sub 5}SiB{sub 2}. Especially for the powder metallurgically fabricated alloy, showing finely dispersed phases, the quantification of microstructural constituents is difficult. The phases, however, can be separated from one another via computer tomography.

  7. Schottky barrier height tuning using P+ DSS for NMOS contact resistance reduction

    Science.gov (United States)

    Khaja, Fareen Adeni; Rao, K. V.; Ni, Chi-Nung; Muthukrishnan, Shankar; Lei, Jianxin; Darlark, Andrew; Peidous, Igor; Brand, Adam; Henry, Todd; Variam, Naushad

    2012-11-01

    Nickel silicide (NiSi) contacts are adopted in advanced CMOS technology nodes as they demonstrate several benefits such as low resistivity, low Si consumption and formation temperature. But a disadvantage of NiSi contacts is that they exhibit high electron Schottky barrier height (SBH), which results in high contact resistance (Rc) and reduces the NMOS drive current. To reduce SBH for NMOS, we used phosphorous (P) ion implantation into NiPt silicide with optimized anneal in order to form dopant segregated Schottky (DSS). Electrical characterization was performed using test structures such as Transmission Line Model, Cross-Bridge Kelvin Resistor, Van der Pauw and diodes to extract Rc and understand the effects of P+ DSS on ΦBn tuning. Material characterization was performed using SIMS, SEM and TEM analysis. We report ˜45% reduction in Rc over reference sample by optimizing ion implantation and anneal conditions (spike RTA, milli-second laser anneals (DSA)).

  8. The Application of Nuclear Techniques to Solid State Devices.

    Science.gov (United States)

    1980-12-15

    characterized phenomeno- logically . Our efforts therefore addressed themselves toward broaden- ing the basis of experimental facts and deepening the...Italy C. L. Ramiller Student Intel Magnetics, Santa Clara, California J. L. Regolini Collaborator Stanford University, Stanford, California P. Revesz...316 (1978). 20. "Radioactive Silicon as a Marker in Thin-Film Silicide Formation", R. Pretorius, C. L. Ramiller , S. S. Lau and M-A. Nicolet, Appl. Phys

  9. Technical Operations Support III (TOPS III). Task Order 0061: Fundamental Theory Based Assessment of Thermoelectric Merit Factor for Heusler Alloys

    Science.gov (United States)

    2010-10-01

    can yet be commercialized. Moreover, these materials are not very practical due to scarcity of the elements, toxicity and decomposition-evaporation...are not very practical due to scarcity of the elements, toxicity and decomposition-evaporation problems at elevated temperatures [1]. Today, there...Maximum zT: 0.8 at over 1000K Atoms: 12 Lanthanum Aluminium Silicide (LaAlSi) Experimental Structure: cubic [a b c]: 5.94 Bandgap: (-) DFT(GGA) Energy

  10. Surface morphology and the phase formation at Cr/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Shivani [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India)]. E-mail: shivani95@sify.com; Jain, Ankur [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India); Lal, Chhagan [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India); Ganesan, V. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore (India); Jain, I.P. [Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302004 (India)]. E-mail: ipjain46@sify.com

    2007-03-15

    Metal silicide technology has been attracting attention worldwide and it constitutes an active, frontier area of research. Research in this area has not only stimulated the exploration of new phenomena, but is also leading to a technological revolution. Electron beam evaporation in ultra high vacuum (UHV) environment is one of the best techniques to grow thin metal film on Si substrate. Metal silicide contact is an interesting and important part of integrated circuit. Due to selective growth and high thermal stability metal silicides are used in very large scale integrated (VLSI) and ultra large scale integrated (ULSI) applications. In this paper our interest is to show GIXRD, XRR and SPM measurement on C (2 nm)/Cr (25 nm)/Si (1 0 0) system in which thin films were deposited using electron beam evaporation technique at 2 x 10{sup -8} Torr vacuum. The capping layer of 2 nm carbon is deposited to stop contamination. The C (2 nm)/Cr (25 nm)/Si (1 0 0) system were annealed in 10{sup -5} Torr vacuum at temperatures 300-600 deg. C to study the formation of chromium silicide. Structural properties at the interface has been studied by grazing incidence X-ray diffraction (GIXRD), which shows formation of Cr{sub 3}Si and CrSi{sub 2} as a result of interface mixing due to annealing. The morphology of the system was investigated by AFM in tapping mode. It was found that nano-rod type structures were formed with annealing at 600 deg. C temperature.

  11. Page 1 478 S Bandopadhyay et al Binding energy (eV) 84 O 85 O ...

    Indian Academy of Sciences (India)

    Figure 6. Expanded runs of the strongest XPS core lines, a. Ni2p doublet and b. Si2P. Table 1. Composition of nickel silicide film. XPS Amplitude FWHM Intensity ASF Relative atomic line (A;KCPS) [T;eV] (I, Kcps-eV) (si) concentration (C). Ni2pala (Eso = 852-6 eV) 135-2 2-4 324.5. Main line 3.7 0.49. Satellite. Eso = 857.8 ...

  12. The growth and reactivity of the {Sm}/{Si(100)} interface

    Science.gov (United States)

    Onsgaard, J.; Christiansen, M.; Ørskov, F.; Godowski, P. J.

    1991-05-01

    The growth of the {Sm}/{Si(100)} interface is described and discussed in the context of the increasing experimental insight into lanthanide/semiconductor interfaces. Silicide formation takes place in the 1 to 5 monolayers coverage region. Different ordered structures, dependent on the initial coverage and temperature treatment, are observed. Oxygen adsorption and binding is strongly promoted, both when Sm is present at the surface and when oxygen reacts with a samarium-suicide film.

  13. Platinum Group Coatings for Refractory Metals

    Science.gov (United States)

    1984-06-01

    molybdenum , tungsten, tantalum, niobium, rhenium or carbon/carbon must be used to fabricate the parts to withstand these temperatures. These materials and...layers (eg silicides, borides ) o Alloy coatings that form compact oxide layers (Ni and Co F based alloys) o Stable oxides that provide physical barriers...thermally etched) surface and seems to promote adhesion. Molybdenum rods 3mm in diameter were used as substrates during many of the runs where the

  14. Infrared technology and applications; Proceedings of the Meeting, Cannes, France, November 26-29, 1985

    Science.gov (United States)

    Baker, Lionel R. (Editor); Masson, Andre (Editor)

    1986-01-01

    The present conference on state-of-the-art IR systems and components technologies and their applications encompasses developments in IR systems design, production technologies, IR component testing, IR systems evaluations, laboratory and industrial applications, and aerospace ranging sensor and surveillance sensor applications. Attention is given to IR zoom lens telescopes, large zinc sulphide windows for airborne applications, thermal imaging system evaluation, minimum resolvable temperature difference measurement methods, industrial use of IR spectroscopy, platinum silicide sensor imagery, and recent developments in laser rangefinders.

  15. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  16. Self-Propagating High-Temperature Synthesis of Titanium Carbosilicide and Electrically Conductive Composite Coatings on its Basis

    Science.gov (United States)

    Shulpekov, A. M.; Lepakova, O. K.; Golobokov, N. N.; Dyukarev, M. A.

    2017-09-01

    Titanium carbosilicide is obtained by the method of self-propagating high-temperature synthesis with titanium and ferrosilicon (with silicon content of 80 mass %) used as initial products. Addition of TiSi2 to the endproduct with the subsequent heat treatment allows the content of titanium silicide to be increased. The materials based on titanium carbosilicide provide electroconductivity of polymer composite coatings at temperatures exceeding 350°C.

  17. An incommensurately modulated structure of eta '-phase of Cu.sub.3+x./sub.Si determined by quantitative electron diffraction tomography

    Czech Academy of Sciences Publication Activity Database

    Palatinus, Lukáš; Klementová, Mariana; Dřínek, Vladislav; Jarošová, Markéta; Petříček, Václav

    2011-01-01

    Roč. 50, č. 8 (2011), s. 3743-3751 ISSN 0020-1669 R&D Projects: GA ČR GA203/09/1088 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z40720504 Keywords : copper silicide * incommensurate structure * electron diffraction tomography * ab inition structure solution * superspace Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.601, year: 2011

  18. Alternative Plasmonic Materials: Beyond Gold and Silver

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Shalaev, Vladimir M.; Boltasseva, Alexandra

    2013-01-01

    such as gold and silver, that exhibit metallic properties and provide advantages in device performance, design flexibility, fabrication, integration, and tunability. This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent...... conducting oxides, perovskite oxides, metal nitrides, silicides, germanides, and 2D materials such as graphene. This review provides a summary of the recent developments in the search for better plasmonic materials and an outlook of further research directions....

  19. High Temperature Interactions of Metallic Matrices with Ceramic Reinforcements

    Science.gov (United States)

    1990-12-31

    temperatura range were extensive; various metal silicides, metalIcarbides, ternary metal-slilcon-carbides, and unreacted carbon were formed as layered...Couples 3.2.1 Preparation of SiC Ceramic: The polycrystalline SiC substrates, designated as Hexoloy, were obtained from the Carborundum Corporation ...and was received from Engelhard Corporation . The metal pieces were cut into a similar size to that of the SiC, mechanically ground with #600 SiC papers

  20. Transmission electron microscopy study on silicon nitride/stainless steel bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Poza, P. [Departamento de Ciencia e Ingenieria de los Materiales, Universidad Rey Juan Carlos, 28933 Mostoles, Madrid (Spain); Miranzo, P. [Institute of Ceramics and Glass, CSIC, Campus de Cantoblanco, 28049 Madrid (Spain); Osendi, M.I. [Institute of Ceramics and Glass, CSIC, Campus de Cantoblanco, 28049 Madrid (Spain)], E-mail: miosendi@icv.csic.es

    2008-11-28

    The reaction zone of a diffusion bonded Si{sub 3}N{sub 4}/stainlees steel (ss) interface formed at 1100 deg. C was analyzed by transmission electron microscopy and X-ray diffraction (XRD). Besides the formation of various iron silicides, iron nitride and chromium nitride phases detected by XRD, Cr{sub 3}Ni{sub 5}Si{sub 2} crystals were identified at the interface by TEM.

  1. Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

    Energy Technology Data Exchange (ETDEWEB)

    Rabinowitch, E. I. [Argonne National Laboratory (ANL), Argonne, IL (United States); Katz, J. J. [Argonne National Laboratory (ANL), Argonne, IL (United States)

    1946-09-30

    This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

  2. Thin films and buried interfaces characterization with X-ray standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Lagomarsino, S. [CNR, Rome (Italy). Istituto Elettronica Stato Solido

    1996-09-01

    The X-ray standing wave techniques is a powerful, non destructive method to study interfaces at the atomic level. Its basic features are described here together with the peculiarities of its applications to epitaxial films and buried interfaces. As examples of applications, experiments carried out on Si/silicide interfaces, on GaAs/InAs/GaAs buried interfaces and on Si/Ge superlattices are shown.

  3. Surface modification to improve fireside corrosion resistance of Fe-Cr ferritic steels

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong-Hee (Clarendon Hills, IL); Natesan, Krishnamurti (Naperville, IL); Rink, David L. (Mokena, IL)

    2010-03-16

    An article of manufacture and a method for providing an Fe--Cr ferritic steel article of manufacture having a surface layer modification for corrosion resistance. Fe--Cr ferritic steels can be modified to enhance their corrosion resistance to liquid coal ash and other chemical environments, which have chlorides or sulfates containing active species. The steel is modified to form an aluminide/silicide passivating layer to reduce such corrosion.

  4. Influence of Si(111)-Cr surface phases in the formation and conductivity of Fe and Yb monolayers at room temperature on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Galkin, N.G.; Goroshko, D.L.; Dotsenko, S.A.; Gouralnik, A.S.; Louchaninov, I.V

    2004-10-01

    Conductivity through the disordered iron and ytterbium two-dimensional layers during their formation on Si(111)-7x7, Si(111)7x7-Cr and Si(111)-({radical}3x{radical}3)/30 deg. -Cr surface phases was investigated. It was found in the case of Si(111)-7x7 surface that at submonolayer [1 monolayer (ML)=7.8x10{sup 18} at./m{sup 2} ] metal coverage iron and ytterbium atoms intermix with silicon surface atoms resulting in formation of silicide islands and silicide alloy layers which display the properties of a degenerated semiconductor. Deposition of small amounts (within one monolayer) of iron or ytterbium atoms onto the Si(111)-[({radical}3x{radical}3)/30 deg. ]-Cr surface phase results in growth of iron or ytterbium metal islands without formation of silicides. This fact indicates that this surface phase represents a diffusion barrier which blocks intermixing. It has been shown that metallic-type conductivity through the nearly continuous layer occurs at the coverage of 8.5 ML for Fe and 6.0 ML for Yb. For deposition of Fe or Yb atoms onto the Si(111)7x7-Cr surface phase, the 3D island growth mode without metallic-type layer conductivity was found within a coverage range extending up to 20-30 monolayers.

  5. Phase Evolution in and Creep Properties of Nb-Rich Nb-Si-Cr Eutectics

    Science.gov (United States)

    Gang, Florian; Kauffmann, Alexander; Heilmaier, Martin

    2017-10-01

    In this work, the Nb-rich ternary eutectic in the Nb-Si-Cr system has been experimentally determined to be Nb-10.9Si-28.4Cr (in at. pct). The eutectic is composed of three main phases: Nb solid solution (Nbss), β-Cr2Nb, and Nb9(Si,Cr)5. The ternary eutectic microstructure remains stable for several hundred hours at a temperature up to 1473 K (1200 °C). At 1573 K (1300 °C) and above, the silicide phase Nb9(Si,Cr)5 decomposes into α-Nb5Si3, Nbss, and β-Cr2Nb. Under creep conditions at 1473 K (1200 °C), the alloy deforms by dislocation creep while the major creep resistance is provided by the silicide matrix. If the silicide phase is fragmented and, thus, its matrix character is destroyed by prior heat treatment [e.g., at 1773 K (1500 °C) for 100 hours], creep is mainly controlled by the Laves phase β-Cr2Nb, resulting in increased minimum strain rates. Compared to state of the art Ni-based superalloys, the creep resistance of this three-phase eutectic alloy is significantly higher.

  6. A novel nanoscaled Schottky barrier based transmission gate and its digital circuit applications

    Science.gov (United States)

    Kumar, Sunil; Loan, Sajad A.; Alamoud, Abdulrahman M.

    2017-04-01

    In this work we propose and simulate a compact nanoscaled transmission gate (TG) employing a single Schottky barrier based transistor in the transmission path and a single transistor based Sajad-Sunil-Schottky (SSS) device as an inverter. Therefore, just two transistors are employed to realize a complete transmission gate which normally consumes four transistors in the conventional technology. The transistors used to realize the transmission path and the SSS inverter in the proposed TG are the double gate Schottky barrier devices, employing stacks of two metal silicides, platinum silicide (PtSi) and erbium silicide (ErSi). It has been observed that the realization of the TG gate by the proposed technology has resulted into a compact structure, with reduced component count, junctions, interconnections and regions in comparison to the conventional technology. The further focus of this work is on the application part of the proposed technology. So for the first time, the proposed technology has been used to realize various combinational circuits, like a two input AND gate, a 2:1 multiplexer and a two input XOR circuits. It has been observed that the transistor count has got reduced by half in a TG, two input AND gate, 2:1 multiplexer and in a two input XOR gate. Therefore, a significant reduction in transistor count and area requirement can be achieved by using the proposed technology. The proposed technology can be also used to perform the compact realization of other combinational and sequential circuitry in future.

  7. A study on the change in the phase transition temperature of TiSi sub 2 by adding the Zr element on different Si substrates

    CERN Document Server

    Yoon, S H

    1999-01-01

    The stabilization of C49 TiSi sub 2 at high temperature was investigated by adding Zr element to Ti-silicide both on single crystalline Si(100) and amorphous Si substrates. This stabilization of the C49 TiSi sub 2 phase, which exhibits lower surface and interface energies than those of the C54 TiSi sub 2 phase, was expected to suppress the problems of Ti-silicide, such as the phase transition and the agglomeration. Ti and Zr films of 40 nm were co-deposited on Si substrates in a dual e-beam evaporation system equipped with an ion pump and at a base pressure of approx 5x10 sup - sup 9 Torr. The amounts of Zr contents added to the Ti-silicide were 5, 10 and 20 atomic %, and the thicknesses were monitored by in-situ quartz-crystal thickness monitors. After the deposition, films were annealed by using an ex-situ vacuum furnace at temperatures between 600 .deg. C and 900 .deg. C in 100 .deg. C increments. The phase identification and the chemical compositions were investigated by X-ray diffraction (XRD) and Auger ...

  8. Electronic properties of new superconductors based on Ca(Al sub x Si sub 1 sub - sub x) sub 2 and Sr(Ga sub x Si sub 1 sub - sub x) sub 2 in crystal and nanotubular states

    CERN Document Server

    Shein, I R; Medvedeva, N I; Ivanovskij, A L

    2002-01-01

    The zone structures of the new Ca(Al sub x Si sub 1 sub - sub x) sub 2 and Sr(Ga sub x Si sub 1 sub - sub x) sub 2 layered superconductors (AlB sub 2 -type) are studied through the LMTO first-principle full-potential method. It is shown that the superconducting properties of the ternary silicides is conditioned by high density of the (Ca, Sr)d-states near the Fermi level, whereas the T sub C growth by the Sr(Ga sub x Si sub 1 sub - sub x) sub 2 -> Ca(Al sub x Si sub 1 sub - sub x) sub 2 transition is related to the increase in the photon frequencies due to the atoms mass decrease. Modeling the electron properties of the hypothetical (11, 11) and (20, 0) CaAlSi and SrGaSi nanotubes is accomplished. The silicide systems by transition from the crystalline to nanotubular state retain the metal-like properties. The template and film convolution methods may become the methods for obtaining the silicide nanotubes

  9. Studies on layer growth and interfaces on Ta-base thin layers by means of XPS; Untersuchungen zu Schichtwachstum und Grenzflaechen an Ta-basierten Duennschichten mittels XPS

    Energy Technology Data Exchange (ETDEWEB)

    Zier, M.

    2007-11-02

    In this thesis studies on the growth and on the formation of the interfaces of Ta and TaN layers on Si and SiO{sub 2} were performed. In the system TaN on SiO{sub 2} no reaction on the interface could be found. As the system with the mostly disturbed interface Ta on SiO{sub 2} was proved. Here a reduction of the SiO{sub 2} at simultaneous oxidation of the Ta was to be observed. Additionally tantalum silicide was formed to be considered concerning the bonding state as Ta{sub 5}Si{sub 3}, from which a double layer of a tantalum silicide and a tantalum suboxide resulted. A whole thickness of the double layer of above 1 nm resulted. In the system Ta on Si at the deposition of the film on the interface a tantalum silicide was formed to be characterized concerning the bonding state as TaSi{sub 2}. The thickness of the interlayer growed thereby up to 0.8 nm in form of islands. Finally in the system TaN on Si a silicon nitride formation during the deposition was observed, which was attributed to the insertion of adsorbed nitrogen from the sputtering atmosphere by recoil implantation of the sputtered Ta atoms. The silicon nitride interlayer growed thereby up to a thickness of 0.8 nm.

  10. Influence of Powder Metallurgical Processing Routes on Phase Formations in a Multicomponent NbSi-Alloy

    Science.gov (United States)

    Seemüller, C.; Hartwig, T.; Mulser, M.; Adkins, N.; Wickins, M.; Heilmaier, M.

    2014-09-01

    Refractory metal silicide composites on the basis of Nbss-Nb5Si3 have been investigated as potential alternatives for nickel-base superalloys for years because of their low densities and good high-temperature strengths. NbSi-based composites are typically produced by arc-melting or casting. Samples in this study, however, were produced by powder metallurgy because of the potential for near net-shape component fabrication with very homogeneous microstructures. Either gas atomized powder or high-energy mechanically alloyed elemental powders were compacted by powder injection molding or hot isostatic pressing. Heat treatments were applied for phase stability evaluation. Slight compositional changes (oxygen, nitrogen, or iron) introduced by the processing route, i.e., powder production and consolidation, can affect phase formations and phase transitions during the process. Special focus is put on the distinction between different silicides (Nb5Si3 and Nb3Si) and silicide modifications (α-, β-, and γ-Nb5Si3), respectively. These were evaluated by x-ray diffraction and energy-dispersive spectroscopy measurements with the additional inclusion of thermodynamic calculations using the calculated phase diagram method.

  11. Design and optimization of high-performance slot-microring Si-photodetector based on internal photoemission effect

    Science.gov (United States)

    Hosseinifar, Mitra; Ahmadi, Vahid; Ebnali-Heidari, Majid

    2017-08-01

    This paper presents the design and optimization of a microring resonator enhanced-internal photoemission effect-photodetectors (MRRE-IPE-PDs) suitable for optical communication. Two PD configurations are considered: the first consists of an MRR that is partially surrounded by a nanolayer of silicide with a single Schottky barrier on p-Si MRR; and the second consists of a silicide film buried in the width midpoints of a Si-based MRR where photoemission occurs over the two Schottky barriers. Several silicides are considered for the stripe (PtSi, Pd2Si, TaSi2 and CoSi2). The important features of the device, such as quantum efficiency (QE), responsivity, CW sensitivity and dark current are discussed and the trade-off between 3 dB bandwidth and QE are analyzed for nanoscaled absorption layer. In this regard, some design curves are presented for the optimized MRRE-IPE-PDs. Additionally, this paper reveals substantial improvement via comparisons with QE and responsivity measurements reported in the literature. Bandwidth-efficiency product of 61-71 GHz, responsivities of 0.8-0.9 and QE of 64-71% and the minimum receiver sensitivity of -65 to -66 dBm are also predicted for single and double Schottky barriers, respectively.

  12. Photoemission study of the initial stage of Er/Si(100) interface formation

    CERN Document Server

    Chen Gang; Li Zhe Shen; Wang Xun

    2002-01-01

    The initial stage of Er/Si(100) interface formation has been investigated by using synchrotron radiation photoelectron spectroscopy combined with low-energy electron diffraction. Both the valence band and the core level peaks of the Si photoemission spectra shift rigidly with increasing Er coverage in the submonolayer region. Upon depositing 0.6 monolayers of Er on the Si(100) surface at room temperature, the surface Fermi level is ultimately pinned at 0.29 eV above its initial value, which is equivalent to a Schottky barrier height of 0.67 eV. No evidence is found for the formation of Er silicides at the as-deposited surfaces. Annealing of the Er-covered Si(100) surfaces at 600 deg. C results in the appearance of a new peak located 1.2 eV below the Si 2p peak, indicating the presence of some sort of Er silicide. Meanwhile, the Er 4f spectrum measured for samples upon annealing exhibits a well-resolved fine structure, implying that only monospecies of Er silicide may exist on the surface.

  13. A Vacuum Encapsulated Lateral FED with Various Cathode Materials

    Science.gov (United States)

    Park, Cheol-Min; Lim, Moo-Sup; Han, Min-Koo

    We have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of the emission current. Although poly-Si and Si emitter exhibit almost identical turn-on voltages, the Si emitter shows a sharp turn-on characteristic compared with the poly-Si emitter. It may be caused by the uniform surface of the Si emitter. The current densities of poly-Si, and Si emitter are 0.47, 0.43μA/tip respectively when the anode to cathode voltage is 90V. The turn-on voltage and current density of the Ti-silicide emitter are about 31V, and 1.81μA/tip at a VAK of 90V. The normalized current fluctuations shows that the Ti-silicide emitter exhibits the most stable current.

  14. Materials characterization of rapid thermal chemical vapor deposition of titanium disilicide

    Science.gov (United States)

    Gladden-Green, Dannellia Banay

    Technological advancements of novel processes and materials involving refractory metal silicides for ultra large scale integration is of paramount importance to the semiconductor industry. Scaling of devices to meet the demands for increased packing density and speed requires such novel processes and materials. Rapid thermal chemical vapor deposition (RTCVD) of titanium disilicide (TiSisb2) was investigated in an effort to meet some of the challenges of ultra large scale integration (ULSI) technology. Selective RTCVD of TiSisb2 offers an optimal technological vehicle for achieving contacts to ultra-shallow junctions. Of all of the metal silicides, TiSisb2 has the lowest resistivity and meets the microelectronics demands for a thermally stable contact. The research results presented in this dissertation explores the mechanisms of selective RTCVD of TiSisb2 in terms of thermodynamic trends and kinetic driving forces for nucleation and growth. The present research addresses the qualitative and quantitative parameters that affect the controlling mechanisms for nucleation and therefore the results provide significant data and theoretical insights into a state-of-the-art process. Just as the fundamental building block in understanding the kinetic constraints of a process lie in the realm of thermodynamic exploration, understanding the complex processes involved in RTCVD TiSisb2 begin with characterization of the mechanisms governing thin film nucleation. In this work, the early stages of growth are investigated as they offer insight into how process parameters are optimized to render desired silicide film properties. Equilibrium simulations have been used to model the CVD reaction with very good trend indicating accuracy. Empirical investigations of CVD TiSisb2 took place in a low-pressure rapid-thermal environment using the SiHsb4 + TiClsb4 gas system on silicon (100) substrates. Secondary ion mass spectroscopy (SIMS) has been used to qualify the benefits of vacuum and

  15. Microstructural and mechanical characterization of Nb-based in situ composites from Nb-Si-Ti ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z. [Department of Mechanics and Mechanical Engineering, CAS Key Laboratory for Mechanical Behavior and Design of Materials, School of Engineering Science, University of Science and Technology of China, Hefei 230026, Anhui (China); Peng, L.M. [Department of Mechanics and Mechanical Engineering, CAS Key Laboratory for Mechanical Behavior and Design of Materials, School of Engineering Science, University of Science and Technology of China, Hefei 230026, Anhui (China)], E-mail: penglm@ustc.edu.cn

    2007-11-15

    This study deals with the Nb-niobium silicide-based composites developed by the hot-pressing of Nb-Si-Ti ternary powder mixtures with a fixed Ti addition (6 at.%) and Si content ranging from hypereutectic (11 at.%) to near-eutectic compositions (18 at.%). The effects of Si content, Ti addition and strain rates on the sample microstructural characterization, flexural strength, fracture toughness, quasi-static compressive deformation and failure processes were investigated. It was revealed that the volume fraction of silicides increased with increasing Si content, and most of the Ti atoms dissolved into the niobium silicides to form (Nb,Ti){sub 5}Si{sub 3} solid solutions instead of binary titanium silicides. The experimental evidence showed that a moderate improvement in the flexural strength, fracture toughness and compressive yield stress of the composites was achieved by the addition of Ti. Higher Si additions produced a much more remarkable enhancement in the compressive yield stress and bulk hardness, whereas both the flexural strength and fracture toughness decreased with increasing Si content owing to the existence of residual porosities in the samples. The composites showed remarkable superiority to the arc-melted Nb-Si alloys and monolithic niobium silicides in fracture toughness (8.3-13.0MPa{radical}(m) vs. 4.5MPa{radical}(m)), where the toughening effect was attributed mainly to crack bridging and crack deflection by the remaining ductile Nb phase. Moreover, quasi-static uniaxial compression tests at strain rates between 10{sup -5} and 10{sup -3} s{sup -1} indicated that the deformation behavior and failure processes were significantly affected by Si content and strain rates. The strain-rate-hardening behavior for all the strain rates was observed in the composite materials and the strain-rate sensitivity decreased with increasing Si content. At a lower strain rate, the composite materials with a hypoeutectic Si composition failed with a pseudoplastic

  16. Recent developments in production of radioactive ion beams with the selective laser ion source at the on-line isotope separator ISOLDE

    CERN Document Server

    Catherall, Richard; Köster, U; Lettry, Jacques; Suberlucq, Guy; Marsh, Bruce A; Tengborn, Elisabeth

    2004-01-01

    The production of radioactive ionization laser ion source (RILIS) of ISOLDE on-line isotope separation facility was investigated. The RILIS setup included three dye lasers and ionization schemes which employ three resonant transitions were also used. The RILIS efficiency could be reduced by nuclear effects such as hyperfine splitting and isotope shifts. The off-line resonance ionization spectroscopy determined optimal three-step ionization schemes for yttrium, scandium and antimony and antimony. The results show that best ionization schemes of Y provided gain factor of 15 with respect to surface ionization. (Edited abstract) 8 Refs.

  17. 1.0. B. Ewa

    African Journals Online (AJOL)

    Lanthanum Lit-140 487,1596.5 26.46(0.02). Lutetium Lu-177 208.4 0.59(0.01). Neodymium Nd-147 91,531 20.21(5.91). Potassium(%)K-42 1524.7 1.46(0,0]). Rubidium Rb—86 1076.6 71.66(2.11). 112.33Scandium Sc-46 889.3,1120.3. Sodium(%)Na-24 1368.5 0.01(1.0E-04). Tantalum Til—182 1221.4 2.12(0.07). Thorium ...

  18. Stress and strain effects on the electronic structure and optical properties of ScN monolayer

    Science.gov (United States)

    Tamleh, Shirin; Rezaei, Ghasem; Jalilian, Jaafar

    2018-02-01

    Based on the density functional theory, electronic and optical properties of a monolayer scandium nitride structure have been studied under different strain conditions. Our results indicate that both biaxial compressive and tensile strain effects lead to change the band gap of this structure with different rates. Also, optical absorption spectrum peaks experience an obvious red and blue shifts with the exerting of tensile and compressive strains, respectively. Our results express that ScN monolayer can be the promising candidate for the future nano-base electrical and optical devices.

  19. Renormalized molecular levels in a Sc3N@C-80 molecular electronic device

    DEFF Research Database (Denmark)

    Larade, Brian; Taylor, Jeremy Philip; Zheng, Q. R.

    2001-01-01

    We address several general questions about quantum transport through molecular systems by an ab initio analysis of a scandium-nitrogen doped C-80 metallofullerene device. Charge transfer from the Sc3N is found to drastically change the current-voltage characteristics: the current through the Sc3N...... @ C-80 device is double that through a bare C-80 device. We provide strong evidence that transport in such molecular devices is mediated by molecular electronic states which have been renormalized by the device environment, such as the electrodes and external bias V-b. The renormalized molecular...

  20. Trace-element contents of postorogenic granites of the eastern Arabian Shield, Kingdom of Saudi Arabia

    Science.gov (United States)

    Stuckless, J.S.; Vaughn, R.B.; VanTrump, George

    1986-01-01

    Trace-element contents for 46 postorogenic granitoids vary by as much as two orders of magnitude; most samples are strongly enriched in incompatible elements (such as the heavy rare earths, yttrium, niobium, and uranium) and depleted in the compatible elements (such as barium, strontium, scandium, europium, and cobalt). These trace-element characteristics are typical of A-type granites found in other areas of the world. In spite of the wide range in trace-element contents, no samples contained economically significant concentrations of a single element.

  1. Very high efficacy electrodeless high intensity discharge lamps

    Science.gov (United States)

    Johnson, Peter D.

    1987-01-01

    An electrodeless arc lamp comprises an outer jacket hermetically sealing and thermally protecting an arc tube inside which has an upwardly convex bottom center section. The absence of chemically reactive electrode material makes it possible to use metal halides other than iodides. The tube contains chlorides, bromides or a mixture thereof of scandium and sodium in a nearly equimolar relationship in addition to mercury and an inert gas. Good color balance can be obtained at reduced reservoir temperature and with less power loss. Reduction in wall temperature makes it possible to attain longer lamp life.

  2. HTSC, negative U, and RVB; cuprates and oxyhalides

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, J.A. (Univ. of Bristol (United Kingdom))

    1994-06-01

    Attention is redrawn to published work on a negative U perception of how HTSC develops in the mixed-valent cuprates and bismuthates. The mechanism that has been proposed is one of a two-subsystem, three-center, dynamic seeded disproportionation, driven by strong shell-closure effects in high-valent environment. In pursuing why alternative proposals seem less viable we have made an examination of the oxyhalide systems TiOCl(Br) substituted with scandium. These d[sup 1] oxyhalides are prime candidates for RVB behavior, though not, it seems, superconductivity. 12 refs.

  3. Accumulation of rare earth elements by siderophore-forming Arthrobacter luteolus isolated from rare earth environment of Chavara, India.

    Science.gov (United States)

    Emmanuel, E S Challaraj; Ananthi, T; Anandkumar, B; Maruthamuthu, S

    2012-03-01

    In this study, Arthrobacter luteolus, isolated from rare earth environment of Chavara (Quilon district, Kerala, India), were found to produce catechol-type siderophores. The bacterial strain accumulated rare earth elements such as samarium and scandium. The siderophores may play a role in the accumulation of rare earth elements. Catecholate siderophore and low-molecular-weight organic acids were found to be present in experiments with Arthrobacter luteolus. The influence of siderophore on the accumulation of rare earth elements by bacteria has been extensively discussed.

  4. Faraday rotator based on TSAG crystal with orientation.

    Science.gov (United States)

    Yasuhara, Ryo; Snetkov, Ilya; Starobor, Aleksey; Mironov, Evgeniy; Palashov, Oleg

    2016-07-11

    A Faraday isolator (FI) for high-power lasers with kilowatt-level average power and 1-µm wavelength was demonstrated using a terbium scandium aluminum garnet (TSAG) with its crystal axis aligned in the direction. Furthermore, no compensation scheme for thermally induced depolarization in a magnetic field was used. An isolation ratio of 35.4 dB (depolarization ratio γ of 2.9 × 10-4) was experimentally observed at a maximum laser power of 1470 W. This result for room-temperature FIs is the best reported, and provides a simple, practical solution for achieving optical isolation in high-power laser systems.

  5. Tri-material multilayer coatings with high reflectivity and wide bandwidth for 25 to 50 nm extreme ultraviolet light

    Energy Technology Data Exchange (ETDEWEB)

    Aquila, Andrew; Salmassi, Farhad; Liu, Yanwei; Gullikson, Eric M.

    2009-09-09

    Magnesium/silicon carbide (Mg/SiC) multilayers have been fabricated with normal incidence reflectivity in the vicinity of 40% to 50% for wavelengths in the 25 to 50 nm wavelength range. However many applications, for example solar telescopes and ultrafast studies using high harmonic generation sources, desire larger bandwidths than provided by high reflectivity Mg/SiC multilayers. We investigate introducing a third material, Scandium, to create a tri-material Mg/Sc/SiC multilayer allowing an increase the bandwidth while maintaining high reflectivity.

  6. The ternary system: Silicon-tantalum-uranium

    Energy Technology Data Exchange (ETDEWEB)

    Rogl, Peter, E-mail: peter.franz.rogl@univie.ac.a [Institute of Physical Chemistry, University of Vienna, A-1090 Wien, Waehringerstrasse 42 (Austria); Noel, Henri [Laboratoire de Chimie du Solide et Materiaux, UMR-CNRS 6226, Universite de Rennes I, Avenue du General Leclerc, F-35042 Rennes, Cedex (France)

    2010-09-01

    Phase equilibria in the ternary system Si-Ta-U have been established in an isothermal section at 1000 {sup o}C by optical microscopy, electron probe microanalysis and X-ray diffraction. Two novel ternary compounds were observed and were characterised by X-ray powder Rietveld refinement: stoichiometric {tau}{sub 1}-U{sub 2}Ta{sub 3}Si{sub 4} (U{sub 2}Mo{sub 3}Si{sub 4}-type, P2{sub 1}/c; a = 0.70011(1), b = 0.70046(1), c = 0.68584(1) nm, ss = 109.38(1); R{sub F} = 0.073, X-ray powder Rietveld refinement) and {tau}{sub 2}-U{sub 2-x}Ta{sub 3+x}Si{sub 4} at x {approx} 0.30 (Sc{sub 2}Re{sub 3}Si{sub 4}-type = partially ordered Zr{sub 5}Si{sub 4}-type, P4{sub 1}2{sub 1}2; a = b = 0.69717(3)(1), c = 1.28709(4) nm; R{sub F} = 0.056; X-ray single crystal data). Mutual solubility of U-silicides and Ta-silicides are found to be very small i.e. below about 1 at.%. Due to the equilibrium tie-line Ta{sub 2}Si-U(Ta), no compatibility exists between the U-rich silicides U{sub 3}Si or U{sub 3}Si{sub 2} and tantalum metal. Single crystals obtained from alloys slowly cooled from liquid (2000 {sup o}C), yielded a fully ordered compound U{sub 2}Ta{sub 2}Si{sub 3}C (unique structure type; Pmna, a = 0.68860(1); b = 2.17837(4); c = 0.69707(1) nm; R{sub F2} = 0.048).

  7. Review of SiGe HBTs on SOI

    Science.gov (United States)

    Mitrovic, I. Z.; Buiu, O.; Hall, S.; Bagnall, D. M.; Ashburn, P.

    2005-09-01

    This paper reviews progress in SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI) technology. SiGe HBTs on SOI are attractive for mixed signal radio frequency (RF) applications and have been of increasing research interest due to their compatibility with SOI CMOS (Complementary Metal Oxide Semiconductor) technology. In bipolar technology, the use of SOI substrate eliminates parasitic substrate transistors and associated latch-up, and has the ability to reduce crosstalk, particularly when combined with buried groundplanes (GP). Various technological SOI bipolar concepts are reviewed with special emphasis on the state-of-the-art SOI SiGe HBT devices in vertical and lateral design. More in depth results are shown from a UK consortium advanced RF platform technology, which includes SOI SiGe HBTs. Bonded wafer technology was developed to allow incorporation of buried silicide layers both above and below the buried oxide. New electrical and noise characterisation results pointed to reduced 1/ f noise in these devices compared to bulk counterparts. The lower noise is purported to arise from strain relief of the device structure due to the elasticity of the buried oxide layer during the high temperature epitaxial layer growth. The novel concept of the silicide SOI (SSOI) SiGe HBT technology developed for targeting a reduction in collector resistance, as well as for suppressing the crosstalk, is outlined. The buried tungsten silicide layers were found to have negligible impact on junction leakage. Further to vertical SiGe HBTs on SOI, the challenges of fabricating a lateral SOI SiGe HBT structure are presented.

  8. Diagenetically altered fossil micrometeorites suggest cosmic dust is common in the geological record

    Science.gov (United States)

    Suttle, Martin D.; Genge, Matthew J.

    2017-10-01

    We report the discovery of fossil micrometeorites from Late Cretaceous chalk. Seventy-six cosmic spherules were recovered from Coniacian (87 ± 1 Ma) sediments of the White Chalk Supergroup. Particles vary from pristine silicate and iron-type spherules to pseudomorphic spherules consisting of either single-phase recrystallized magnetite or Fe-silicide. Pristine spherules are readily identified as micrometeorites on the basis of their characteristic mineralogies, textures and compositions. Both magnetite and silicide spherules contain dendritic crystals and spherical morphologies, testifying to rapid crystallisation of high temperature iron-rich metallic and oxide liquids. These particles also contain spherical cavities, representing weathering and removal of metal beads and irregular cavities, representing vesicles formed by trapped gas during crystallization; both features commonly found among modern Antarctic Iron-type (I-type) cosmic spherules. On the basis of textural analysis, the magnetite and Fe-silicide spherules are shown to be I-type cosmic spherules that have experienced complete secondary replacement during diagenesis (fossilization). Our results demonstrate that micrometeorites, preserved in sedimentary rocks, are affected by a suite of complex diagenetic processes, which can result in disparate replacement minerals, even within the same sequence of sedimentary beds. As a result, the identification of fossil micrometeorites requires careful observation of particle textures and comparisons with modern Antarctic collections. Replaced micrometeorites imply that geochemical signatures the extraterrestrial dust are subject to diagenetic remobilisation that limits their stratigraphic resolution. However, this study demonstrates that fossil, pseudomorphic micrometeorites can be recognised and are likely common within the geological record.

  9. Ultra-reduced phases in Apollo 16 regolith: Combined field emission electron probe microanalysis and atom probe tomography of submicron Fe-Si grains in Apollo 16 sample 61500

    Science.gov (United States)

    Gopon, Phillip; Spicuzza, Michael J.; Kelly, Thomas F.; Reinhard, David; Prosa, Ty J.; Fournelle, John

    2017-09-01

    The lunar regolith contains a variety of chemically reduced phases of interest to planetary scientists and the most common, metallic iron, is generally ascribed to space weathering processes (Lucey et al. ). Reports of silicon metal and iron silicides, phases indicative of extremely reducing conditions, in lunar samples are rare (Anand et al. ; Spicuzza et al. ). Additional examples of Fe-silicides have been identified in a survey of particles from Apollo 16 sample 61501,22. Herein is demonstrated the utility of low keV electron probe microanalysis (EPMA), using the Fe Ll X-ray line, to analyze these submicron phases, and the necessity of accounting for carbon contamination. We document four Fe-Si and Si0 minerals in lunar regolith return material. The new Fe-Si samples have a composition close to (Fe,Ni)3Si, whereas those associated with Si0 are close to FeSi2 and Fe3Si7. Atom probe tomography of (Fe,Ni)3Si shows trace levels of C (60 ppma and nanodomains enriched in C, Ni, P, Cr, and Sr). These reduced minerals require orders of magnitude lower oxygen fugacity and more reducing conditions than required to form Fe0. Documenting the similarities and differences in these samples is important to constrain their formation processes. These phases potentially formed at high temperatures resulting from a meteorite impact. Whether carbon played a role in achieving the lower oxygen fugacities—and there is evidence of nearby carbonaceous chondritic material—it remains to be proven that carbon was the necessary component for the unique existence of these Si0 and iron silicide minerals.

  10. Preparation and characterization of Sc doped MgB{sub 2} wires

    Energy Technology Data Exchange (ETDEWEB)

    Grivel, J.-C., E-mail: jean@dtu.dk [Department of Energy Conversion and Storage, Technical University of Denmark, 4000-Roskilde (Denmark); Burdusel, M. [Faculty of Materials Science and Engineering, Polytechnical University of Bucharest, 060042-Bucharest (Romania)

    2016-09-15

    Highlights: • MgB{sub 2} wires doped with Sc (scandium) were prepared by the in-situ route. • The solubility of Sc in the MgB{sub 2} lattice under the present conditions is negligible. • J{sub c} and B{sup *} are slightly improved for low doping levels. - Abstract: The in-situ technique was used to manufacture scandium (Sc) doped MgB{sub 2} wires in a composite Cu–Nb sheath. After reaction at 700 °C, at most 1 at.% Mg was replaced by Sc in the MgB{sub 2} phase, without significant influence on its superconducting transition temperature. For higher Sc concentrations in the nominal composition, the formation of Sc–rich impurity phases was evidenced by SEM/EDS observations. The critical current density and accommodation field of the wires are weakly dependant on the Sc content. It is believed that these effects are related more to modifications of the thermal behaviour of the precursor powders revealed by DTA measurements than to actual doping. The best performance was obtained in a wire with Mg:Sc = 0.995-0.005 atomic ratio.

  11. Electron spin resonance studies of Bi1-xScxFeO3 nanoparticulates: Observation of an enhanced spin canting over a large temperature range

    Science.gov (United States)

    Titus, S.; Balakumar, S.; Sakar, M.; Das, J.; Srinivasu, V. V.

    2017-12-01

    Bi1-xScxFeO3 (x = 0.0, 0.1, 0.15, 0.25) nano particles were synthesized by sol gel method. We then probed the spin system in these nano particles using electron spin resonance technique. Our ESR results strongly suggest the scenario of modified spin canted structures. Spin canting parameter Δg/g as a function of temperature for Scandium doped BFO is qualitatively different from undoped BFO. A broad peak is observed for all the Scandium doped BFO samples and an enhanced spin canting over a large temperature range (75-210 K) in the case of x = 0.15 doping. We also showed that the asymmetry parameter and thereby the magneto-crystalline anisotropy in these BSFO nanoparticles show peaks around 230 K for (x = 0.10 and 0.15) and beyond 300 K for x = 0.25 system. Thus, we established that the Sc doping significantly modifies the spin canting and magneto crystalline anisotropy in the BFO system.

  12. Responses of Trace Elements to Aerobic Maximal Exercise in Elite Sportsmen

    Science.gov (United States)

    OTAĞ, Aynur; HAZAR, Muhsin; OTAĞ, İlhan; Gürkan, Alper Cenk; Okan, İlyas

    2014-01-01

    Trace elements are chemical elements needed in minute quantities for the proper growth, development, and physiology of the organism. In biochemistry, a trace element is also referred to as a micronutrient. Trace elements, such as nickel, cadmium, aluminum, silver, chromium, molybdenum, germanium, tin, titanium, tungsten, scandium, are found naturally in the environment and human exposure derives from a variety of sources, including air, drinking water and food. The Purpose of this study was investigated the effect of aerobic maximal intensity endurance exercise on serum trace elements as well-trained individuals of 28 wrestlers (age (year) 19.64±1.13, weight (Kg) 70.07 ± 15.69, height (cm) 176.97 ± 6.69) during and after a 2000 meter Ergometer test protocol was used to perform aerobic (75 %) maximal endurance exercise. Trace element serum levels were analyzed from blood samples taken before, immediately after and one hour after the exercise. While an increase was detected in Chromium (Cr), Nickel (Ni), Molybdenum (Mo) and Titanium (Ti) serum levels immediately after the exercise, a decrease was detected in Aluminum (Al), Scandium (Sc) and Tungsten (W) serum levels. Except for aluminum, the trace elements we worked on showed statistically meaningful responses (Ptrace elements to the exercise showed us the selection and application of the convenient sport is important not only in terms of sportsman performance but also in terms of future healthy life plans and clinically. PMID:24762350

  13. Stress controlled pulsed direct current co-sputtered Al{sub 1−x}Sc{sub x}N as piezoelectric phase for micromechanical sensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Fichtner, Simon, E-mail: sif@tf.uni-kiel.de [Institute of Material Science, Christian-Albrechts-Universität, Kaiserstr. 2, 24143 Kiel (Germany); Reimer, Tim; Chemnitz, Steffen; Wagner, Bernhard [Institute of Material Science, Christian-Albrechts-Universität, Kaiserstr. 2, 24143 Kiel (Germany); Fraunhofer Institute for Silicon Technology, Fraunhoferstr. 1, 25524 Itzehoe (Germany); Lofink, Fabian [Fraunhofer Institute for Silicon Technology, Fraunhoferstr. 1, 25524 Itzehoe (Germany)

    2015-11-01

    Scandium alloyed aluminum nitride (Al{sub 1−x}Sc{sub x}N) thin films were fabricated by reactive pulsed direct current co-sputtering of separate scandium and aluminum targets with x ≤ 0.37. A significant improvement of the clamped transversal piezoelectric response to strain e{sub 31,f} from −1.28 C/m{sup 2} to −3.01 C/m{sup 2} was recorded, while dielectric constant and loss angle remain low. Further, the built-in stress level of Al{sub 1−x}Sc{sub x}N was found to be tuneable by varying pressure, Ar/N{sub 2} ratio, and Sc content. The thus resulting enhancement of the expectable signal to noise ratio by a factor of 2.1 and the ability to control built-in stress make the integration of Al{sub 1−x}Sc{sub x}N as the piezoelectric phase of micro-electro-mechanical system sensor applications highly attractive.

  14. High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenbo; He, Xingli; Ye, Zhi, E-mail: yezhi@zju.edu.cn, E-mail: jl2@bolton.ac.uk; Wang, Xiaozhi [Department of Information Science and Electronic Engineering, Zhejiang University and Cyrus Tang Centre for Sensor Materials and Applications, 38 Zheda Road, Hangzhou 310027 (China); Mayrhofer, Patrick M.; Gillinger, Manuel; Bittner, Achim; Schmid, Ulrich [Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse, 7/2/366-MST, A-1040 Vienna (Austria); Luo, J. K., E-mail: yezhi@zju.edu.cn, E-mail: jl2@bolton.ac.uk [Institute of Renewable Energy Environmental Technology, University of Bolton, Deane Road, Bolton BL3 5AB (United Kingdom); Department of Information Science and Electronic Engineering, Zhejiang University and Cyrus Tang Centre for Sensor Materials and Applications, 38 Zheda Road, Hangzhou 310027 (China)

    2014-09-29

    AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.

  15. Effect of Sc/Zr ratio on the microstructure and mechanical properties of new type of Al–Zn–Mg–Sc–Zr alloys

    Energy Technology Data Exchange (ETDEWEB)

    Li, Gen [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Zhao, Naiqin, E-mail: nqzhao@tju.edu.cn [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Composite and Functional Materials, Tianjin 300072 (China); Liu, Tao [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Li, Jiajun; He, Chunnian; Shi, Chunsheng; Liu, Enzuo [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Composite and Functional Materials, Tianjin 300072 (China); Sha, Junwei [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

    2014-11-03

    The rare earth scandium (Sc) as a microalloying element has attracted an increasing interest in aluminum alloys for achieving excellent mechanical properties. Combining with zirconium, high strength and low price Al–Sc alloys are expected. The effects of Sc and Zr on the grain refinement, recrystallization resistance and precipitation hardening were investigated in new type of Al–Zn–Mg–Sc–Zr alloys by rolling, annealing and aging processes. Scandium addition into the Al–Zn–Mg alloys can efficiently refine the grain size and increase recrystallization resistance, especially together with zirconium addition. The maximum value of the yield-to-tensile strength (627 MPa/667 MPa) was obtained with 0.2Sc/0.4Zr ratio of the alloy after solution-aging treatment. The additional strengthening of the alloys is attributed to the grain refinement and the precipitation-strengthening effect of Al{sub 3}Sc, Al{sub 3}Zr or Al{sub 3}(Sc, Zr) in the proper ratio of Sc/Zr during aging.

  16. Changes in thermal plasticity of low grade coals during selective extraction of metals

    Directory of Open Access Journals (Sweden)

    В. Ю. Бажин

    2016-08-01

    Full Text Available As the world oil market tends to be highly volatile, the coal becomes a primary source of organic raw materials for chemical and metallurgical industries. Fossil coals can accumulate high amounts of elements and mixtures quite often reaching commercially valuable concentrations. Reserves of scandium and other rare elements in coal deposits in Siberia alone are sufficient to satisfy the expected global demand for several decades. This study is intended to solve complex tasks associated with extraction of metal oxides using the developed enrichment method to ensure the required thermal plasticity determining the quality and properties of metallurgical coke.Laboratory experiments have been conducted for the enrichment of high-ash coals containing the highest concentrations of metals. Thermal plasticity values have been determined with the help of Gieseler plastometer . Using modern technologies and equipment individual deposits can be turned into profitable production of enriched coking coals with concurrent extraction of rare metals. It has been proven that the highest commercial potential lies with the extraction of scandium and some other rare metals in the form of oxides from the coal.

  17. A compact sup 3 H(p,gamma) sup 4 He 19.8 MeV gamma-ray source for energy calibration at the Sudbury Neutrino Observatory

    CERN Document Server

    Poon, A W P; Waltham, C E; Browne, M C; Robertson, R G H; Kherani, N P; Mak, H B

    2000-01-01

    The Sudbury Neutrino Observatory (SNO) is a new 1000-t D sub 2 O Cherenkov solar neutrino detector. A high-energy gamma-ray source is needed to calibrate SNO beyond the sup 8 B solar neutrino endpoint of 15 MeV. This paper describes the design and construction of a source that generates 19.8 MeV gamma rays using the sup 3 H(p,gamma) sup 4 He reaction (''pT''), and demonstrates that the source meets all the physical, operational and lifetime requirements for calibrating SNO. An ion source was built into this unit to generate and to accelerate protons up to 30 keV, and a high-purity scandium tritide target with a scandium-tritium atomic ratio of 1 : 2.0+-0.2 was included. This pT source is the first self-contained, compact, and portable high-energy gamma-ray source (E subgamma>10 MeV). (authors)

  18. Pulpal thermal responses to an erbium,chromium: YSGG pulsed laser hydrokinetic system.

    Science.gov (United States)

    Rizoiu, I; Kohanghadosh, F; Kimmel, A I; Eversole, L R

    1998-08-01

    Laser systems are known to raise pulpal temperatures when applied to tooth surfaces. Dental biocalcified tissues can be cut with an erbium,chromium:yttrium-scandium-gallium-garnet laser-powered hydrokinetic system. This device is effective for caries removal and cavity preparation in vitro. Pulpal monitoring of temperature changes during hard tissue cutting by a hydrokinetic system have not been reported. This study compared the effects of hydrokinetic system, dry bur, and wet bur tooth cutting on pulpal temperature. In vivo thermocouple intrapulpal measurements were made on cuspid teeth in anesthetized beagle dogs. In vitro measurements were made on extracted human molar teeth preserved in high-salt solution and later rinsed in phosphate-buffered saline (pH 7.4) to simulate in vivo conditions. The hydrokinetic system was compared with conventional air-turbine-powered bur cutting. The hydrokinetic system cuts and bur preparations were randomly made on the buccal surfaces at the cervical one third of the crown and extended until exposure of the pulp was confirmed clinically. Pulpal temperatures associated with the hydrokinetic system either showed no change or decreased by up to 2 degrees C. Wet bur preparations resulted in a 3 degrees to 4 degrees C rise. With dry bur preparations, a 14 degrees C rise in temperature was recorded. Under the conditions of this study, the erbium,chromium:yttrium-scandium-gallium-garnet laser-powered hydrokinetic system, when used for cavity preparation, had no apparent adverse thermal effect as measured in the pulp space.

  19. Paramagnetic states in pristine and metallofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Bartl, A. [Inst. fuer Festkoerperforschung im Inst. fuer Festkoerper- und Werkstofforschung e.V. Dresden (Germany); Dunsch, L. [Inst. fuer Festkoerperforschung im Inst. fuer Festkoerper- und Werkstofforschung e.V. Dresden (Germany); Kirbach, U. [Inst. fuer Festkoerperforschung im Inst. fuer Festkoerper- und Werkstofforschung e.V. Dresden (Germany); Schandert, B. [Inst. fuer Festkoerperforschung im Inst. fuer Festkoerper- und Werkstofforschung e.V. Dresden (Germany)

    1995-03-15

    Most pristine fullerenes give very weak ESR signals. The ESR spectra of soot extract and of the C-60, C-70 and higher fullerene fractions show signals of the same ESR linewidths of 0.1 mT but the spin concentrations differ markedly. The lowest spin concentration is found in the soot extract. After different temperature treatments the spin concentration increases. In pure C-60 and C-70 material the spin concentration is about 10{sup 17} spins/g, this is one unpaired electron per 1 000 to 10 000 fullerene molecules. Remarkable alternations of the concentrations of paramagnetic states and of the ESR linewidths can be observed with increasing treatment temperature above 300 C at pure fullerenes. It is concluded that the structure of the paramagnetic states does change. The reason is the removal of oxygen. Furthermore ESR spectroscopy is used to characterize the electronic states of endohedral systems. Fullerenes produced in presence of lanthanum, scandium, holmium and yttrium show resolved ESR spectra in solutions and lanthanum, scandium and holmium already in the solid soot extract which can be interpreted in terms of hyperfine coupling of an unpaired fullerene electron with the nuclear magnetic moments of the metal atoms. In some cases two species of the same metallofullerenes can be observed. Using these results different geometrical models of the investigated metallofullerenes can be predicted. (orig.)

  20. Structural transformations in Sc/Si multilayers irradiated by EUVlasers

    Energy Technology Data Exchange (ETDEWEB)

    Voronov, D.L.; Zubarev, E.N.; Pershyn, Y.P.; Sevryukova, V.A.; Kondratenko, V.V.; Vinogradov, A.V.; Artioukov, I.A.; Uspenskiy, Y.A.; Grisham, M.; Vaschenko, G.; Menoni, C.S.; Rocca, J.J.

    2007-08-21

    Multilayer mirrors for the extreme ultraviolet (EUV) are keyelements for numerous applications of coherent EUV sources such as newtabletop lasers and free-electron lasers. However the field ofapplications is limited by the radiation and thermal stability of themultilayers. Taking into account the growing power of EUV sources thestability of the optics becomes crucial. To overcome this problem it isnecessary to study the degradation of multilayers and try to increasetheir temporal and thermal stability. In this paper we report the resultsof detailed study of structural changes in Sc/Simultilayers when exposedto intense EUV laser pulses. Various types of surface damage such asmelting, boiling, shockwave creation and ablation were observed asirradiation fluencies increase. Cross-sectional TEM study revealed thatthe layer structure was completely destroyed in the upper part ofmultilayer, but still survived below. The layers adjacent tothe substrateremained intact even through the multilayer surface melted down, thoughthe structure of the layers beneath the molten zone was noticeablychanged. The layer structure in this thermally affected zone is similarto that of isothermally annealed samples. All stages of scandium silicideformation such as interdiffusion, solid-state amorphization, silicidecrystallization, etc., are present in the thermally affected zone. Itindicates a thermal nature of the damage mechanism. The tungstendiffusion barriers were applied to the scandium/silicon interfaces. Itwas shown that the barriers inhibited interdiffusion and increased thethermal stability of Sc/Si mirrors.

  1. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing.

    Science.gov (United States)

    Rao, Feng; Ding, Keyuan; Zhou, Yuxing; Zheng, Yonghui; Xia, Mengjiao; Lv, Shilong; Song, Zhitang; Feng, Songlin; Ronneberger, Ider; Mazzarello, Riccardo; Zhang, Wei; Ma, Evan

    2017-12-15

    Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge2Sb2Te5). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc0.2Sb2Te3) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  2. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  3. Synthesis of lithium silicates by the modified method of combustion. XRD and IR; Sintesis de silicatos de litio por el metodo modificado de combustion. DRX e IR

    Energy Technology Data Exchange (ETDEWEB)

    Cruz, D.; Bulbulian, S. [Instituto nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    2002-07-01

    The combustion method is fixed in exothermic reactions for producing ceramic compounds. The precursor solutions are mixtures of metal nitrates and the fuels. This method was modified using non-oxidant compounds as lithium hydroxide and silicide acid and urea as fuel. The precursors were heated during 5 minutes at temperatures between 250 C and 550 C allowing so the mixture combustion. The obtained ceramics were characterized by X-ray diffraction and IR spectroscopy. The sample pollution with carbonates was evaluated and it was found that the presence of these diminish according as increase the calcination temperature. (Author)

  4. Synthesis of Long-T1 Silicon Nanoparticles for Hyperpolarized 29Si Magnetic Resonance Imaging

    Science.gov (United States)

    Atkins, Tonya M.; Cassidy, Maja C.; Lee, Menyoung; Ganguly, Shreyashi; Marcus, Charles M.; Kauzlarich, Susan M.

    2013-01-01

    We describe the synthesis, materials characterization and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na4Si4) and silicon tetrachloride (SiCl4) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ~10 nm with long size-adjusted 29Si spin lattice relaxation (T1) times (> 600 s), which are retained after hyperpolarization by low temperature DNP. PMID:23350651

  5. Synthesis of long T₁ silicon nanoparticles for hyperpolarized ²⁹Si magnetic resonance imaging.

    Science.gov (United States)

    Atkins, Tonya M; Cassidy, Maja C; Lee, Menyoung; Ganguly, Shreyashi; Marcus, Charles M; Kauzlarich, Susan M

    2013-02-26

    We describe the synthesis, materials characterization, and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na₄Si₄) and silicon tetrachloride (SiCl₄) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ∼10 nm with long size-adjusted ²⁹Si spin-lattice relaxation (T₁) times (>600 s), which are retained after hyperpolarization by low-temperature DNP.

  6. Synthesis of long T silicon nanoparticles for hyperpolarized Si magnetic resonance imaging

    DEFF Research Database (Denmark)

    Atkins, T.M.; Ganguly, S.; Kauzlarich, S.M.

    2013-01-01

    We describe the synthesis, materials characterization, and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium...... silicide (Na Si) and silicon tetrachloride (SiCl) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ~10 nm with long size-adjusted Si spin-lattice relaxation (T) times (>600 s), which are retained after hyperpolarization by low...

  7. Material comprising two different non-metallic parrticles having different particle sizes for use in solar reactor

    Science.gov (United States)

    Klausner, James F.; Momen, Ayyoub Mehdizadeh; Al-Raqom, Fotouh A.

    2017-10-03

    Disclosed herein is a composite particle comprising a first non-metallic particle in which is dispersed a second non-metallic particle, where the first non-metallic particle and the second non-metallic particle are inorganic; and where a chemical composition of the first non-metallic particle is different from a chemical composition of the second non-metallic particle; and where the first non-metallic particle and the second non-metallic particle are metal oxides, metal carbides, metal nitrides, metal borides, metal silicides, metal oxycarbides, metal oxynitrides, metal boronitrides, metal carbonitrides, metal borocarbides, or a combination thereof.

  8. Creep analysis of fuel plates for the Advanced Neutron Source

    Energy Technology Data Exchange (ETDEWEB)

    Swinson, W.F.; Yahr, G.T.

    1994-11-01

    The reactor for the planned Advanced Neutron Source will use closely spaced arrays of fuel plates. The plates are thin and will have a core containing enriched uranium silicide fuel clad in aluminum. The heat load caused by the nuclear reactions within the fuel plates will be removed by flowing high-velocity heavy water through narrow channels between the plates. However, the plates will still be at elevated temperatures while in service, and the potential for excessive plate deformation because of creep must be considered. An analysis to include creep for deformation and stresses because of temperature over a given time span has been performed and is reported herein.

  9. Rapid thermal processing science and technology

    CERN Document Server

    Fair, Richard B

    1993-01-01

    This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other

  10. Titanium catalyzed silicon nanowires and nanoplatelets

    Directory of Open Access Journals (Sweden)

    Mohammad A. U. Usman

    2013-03-01

    Full Text Available Silicon nanowires, nanoplatelets, and other morphologies resulted from silicon growth catalyzed by thin titanium layers. The nanowires have diameters down to 5 nm and lengths to tens of micrometers. The two-dimensional platelets, in some instances with filigreed, snow flake-like shapes, had thicknesses down to the 10 nm scale and spans to several micrometers. These platelets grew in a narrow temperature range around 900 celsius, apparently representing a new silicon crystallite morphology at this length scale. We surmise that the platelets grow with a faceted dendritic mechanism known for larger crystals nucleated by titanium silicide catalyst islands.

  11. The use of semiconductor processes for the design and characterization of a rapid thermal processor

    Science.gov (United States)

    Hodul, David; Metha, Sandeep

    1989-02-01

    While a variety of tools are used for the design of semiconductor equipment, processes themselves are often the most informative, providing a convenient and direct method for improving both the hardware and the process. Experiments have been done to evaluate the performance of a commercial rapid thermal processing (RTP) instrument. The effects of chamber geometry and optics as well as the time/temperature recipe were probed using rapid thermal oxidation (RTO), sintering of tungsten suicide and molybdenum silicide, and partial activation of implanted ions. We show how sheet resistance and film thickness maps can be used to determine the dynamic and static temperature uniformity.

  12. Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells

    KAUST Repository

    Mink, Justine E.

    2013-11-25

    We show that contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs). We experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study. We utilized the industry standard contact material, aluminum, as well as a metal, whose silicide has recently been recognized for its improved performance in smallest scale integration requirements, cobalt. Our study shows that improvements in contact engineering are not only important for device engineering but also for microsystems. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Properties of thin films for high temperature flow sensors

    Science.gov (United States)

    Albin, Sacharia

    1991-01-01

    Requirements of material parameters of high temperature flow sensors are identified. Refractory metal silicides offer high temperature sensitivity and high frequency response and are stable up to 1000 C. Intrinsic semiconductors of high band gap are also considered as sensor elements. SiC and diamond are identified. Combined with substrates of low thermal and electrical conductivity, such as quartz or Al2O3, these materials meet several requirements of high sensitivity and frequency response. Film deposition and patterning techniques suitable for these materials are identified.

  14. Microwave coupler and method

    Science.gov (United States)

    Holcombe, C. E.

    1984-11-01

    The present invention is directed to a microwave coupler for enhancing the heating or metallurgical treatment of materials within a cold-wall, rapidly heated cavity as provided by a microwave furnace. The coupling material of the present invention is an alpha-rhombohedral-boron-derivative-structure material such as boron carbide or boron silicide which can be appropriately positioned as a susceptor within the furnace to heat other material or be in powder particulate form so that composites and structures of boron carbide such as cutting tools, grinding wheels and the like can be rapidly and efficiently formed within microwave furnaces.

  15. High-Temperature Ceramic Matrix Composite with High Corrosion Resistance

    Science.gov (United States)

    2010-06-02

    individual zirconium boride and, especially, molybdenum disilicide. STCU PROJECT P286 – FINAL REPORT PAGE 16 02-Jun-10 2...Fragment of XRD pattern for molybdenum silicide. Fig. 2.5. XRD pattern for USS-22+ 2 vol.% TaB2 hot-pressed samples. Fig. 2.6. XRD pattern for USS-22...P286 – FINAL REPORT PAGE 12 02-Jun-10 1. Introduction Ceramic borides , such as hafnium diboride (HfB2) and zirconium diboride (ZrB2

  16. Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications

    Energy Technology Data Exchange (ETDEWEB)

    Norton, D. P.; Budai, J. D.; Chisholm, M. F.; Pennycook, S. J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

    1999-12-06

    We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

  17. Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siad, M., E-mail: siadmenouar@yahoo.fr [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Abdesselam, M. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria); Souami, N. [Centre de Recherche Nucleaire d' Alger, 02 Bd Frantz Fanon (Algeria); Chami, A.C. [USTHB, Faculte de Physique, BP 32, El Alia, Bab Ezzouar (Algeria)

    2011-10-01

    In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950 deg. C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E{sub {alpha}} = 3.2 MeV, nuclear reaction analysis (NRA) at E{sub d} = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.

  18. Synthesis of n-type Mg2Si/CNT Thermoelectric Nanofibers

    Science.gov (United States)

    Kikuchi, Keiko; Yamamoto, Kodai; Nomura, Naoyuki; Kawasaki, Akira

    2017-05-01

    Magnesium silicide (Mg2Si)/carbon nanotube (CNT) thermoelectric nanofibers for use as a flexible thermoelectric material were successfully synthesized through the combined processes of the sol-gel method, magnesiothermic reduction, and liquid-solid phase reaction. In the resulting product, each CNT was coated with Mg2Si which was an approximately 60-nm-thick single crystal. The synthesized Mg2Si-coated CNTs exhibited n-type thermoelectric behavior confirming that n-type thermoelectric composite nanofibers were successfully obtained.

  19. MANAJEMEN KONVERSI TERAS RSG-GAS BERBAHAN BAKAR SILISIDA TINGKAT MUAT TINGGI

    Directory of Open Access Journals (Sweden)

    Lily Suparlina

    2015-03-01

    Full Text Available Penggunaan bahan bakar tingkat muat tinggi dapat memperpanjang siklus operasi reaktor sampai 40 hari. Telah dilakukan perancangan konversi teras dari silisida tingkat muat rendah menuju tingkat muat tinggi. Manajemen konversi teras dari teras silisida tingkat muat 2,96 gU/cm3 menuju teras silisida 4,8 gU/cm3 dilakukan secara bertahap dengan melakukan perhitungan manajemen bahan bakar dalam teras yang menggunakan paket program perhitungan 2 dimensi Batan-FUEL. Penggantian bahan bakar di teras menggunakan pola pergeseran bahan bakar 5/1 yaitu setiap awal siklus terjadi penggantian 5 buah elemen bahan bakar standar dan 1 buah elemen bahan bakar kendali. Dengan mempertahankan konfigurasi teras yang sudah ada, konversi teras dapat dilakukan melalui simulasi teras campuran 2,96 gU/cm3 - 4,8 gU/cm3 dengan memperhatikan batasan keselamatan reaktor yang dipersyaratkan. Oleh karena itu tujuan dari penelitian ini adalah untuk merancang teras campuran yang akan menghasilkan parameter neutronik yang aman pada teras penuh pertama silisida tingkat muat tinggi. Dalam perancangan ini digunakan batang kendali pengaman untuk menambah margin padam yang berkurang akibat pemuatan bahan bakar tingkat muat tinggi. Hasil analisis menunjukkan bahwa konversi teras silisida tingkat muat 2,96 gU/cm3 menuju 4,8 gU/cm3 dapat dilakukan melalui teras campuran tidak langsung dalam 2 tahap yaitu konversi teras silisida 2,96 gU/cm3 - 3,55 gU/cm3 dan konversi teras silisida 3,55 gU/cm3 - 4,8 gU/cm3 dengan performa yang baik. Keuntungan utama dari penggunaan bahan bakar silisida tingkat muat tinggi 4,8 gU/cm3 dibanding teras silisida tingkat muat rendah 2,96 gU/cm3 pada teras RSG-GAS ialah bahwa panjang siklus operasi dapat lebih panjang 18 hari sehingga dapat menghemat penggunaan bahan bakar. Kata kunci : silisida, BKP, teras campuran, pola 5/1, Batan-FUEL   The usage of high density fuel can extend the reactor operation up to 40 days. Designing of low to high density silicide

  20. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Ridgway, M.C.; Elliman, R.G.; Rao, M.R. [Australian National Univ., Canberra, ACT (Australia); Baribeau, J.M. [National Research Council of Canada, Ottawa, ON (Canada)

    1993-12-31

    Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

  1. In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si.

    Science.gov (United States)

    Chou, Yi-Chia; Wu, Wen-Wei; Cheng, Shao-Liang; Yoo, Bong-Young; Myung, Nosang; Chen, Lih J; Tu, K N

    2008-08-01

    The formation of CoSi and CoSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron microscope. The CoSi2 has undergone an axial epitaxial growth in the Si nanowire and a stepwise growth mode was found. We observed that the stepwise growth occurs repeatedly in the form of an atomic step sweeping across the CoSi2/Si interface. It appears that the growth of a new step or a new silicide layer requires an independent event of nucleation. We are able to resolve the nucleation stage and the growth stage of each layer of the epitaxial growth in video images. In the nucleation stage, the incubation period is measured, which is much longer than the period needed to grow the layer across the silicide/Si interface. So the epitaxial growth consists of a repeating nucleation and a rapid stepwise growth across the epitaxial interface. This is a general behavior of epitaxial growth in nanowires. The axial heterostructure of CoSi2/Si/CoSi2 with sharp epitaxial interfaces has been obtained. A discussion of the kinetics of supply limited and source-limited reaction in nanowire case by point contact reaction is given. The heterostructures are promising as high performance transistors based on intrinsic Si nanowires.

  2. Effect of an Ag buffer layer on a Cu/Ag/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Yukawa, M.; Kitagawa, H.; Iida, S

    2004-10-15

    It is well known that Cu reacts with Si to form copper silicide, even at room temperature. To prevent copper silicide from forming on an Si substrate when Cu is used for wiring or as electrodes, it is necessary to place a buffer layer between Cu and the Si substrate. Silver works as a buffer layer between Cu and the Si substrate to form a layered Cu/Ag/Si structure. In the present paper, we determine the minimum effective Ag buffer layer thickness to prevent Cu diffusing into the Si substrate. The results show that Cu can reach the Si substrate through a 5 nm thick Ag film, but that a 50 nm film prevents Cu from diffusing through to the Si substrate. Using scanning electron microscopy (SEM) to observe the interface layer, it was found that round Ag islands form on the Si substrate, whereas Cu appears as a few large square islands and a lot of small clusters. The small Cu clusters tended to wedge into the gaps between the Ag islands. Furthermore, the results indicate that Cu and Ag repel each other.

  3. Interface Engineering to Create a Strong Spin Filter Contact to Silicon

    Science.gov (United States)

    Caspers, C.; Gloskovskii, A.; Gorgoi, M.; Besson, C.; Luysberg, M.; Rushchanskii, K. Z.; Ležaić, M.; Fadley, C. S.; Drube, W.; Müller, M.

    2016-03-01

    Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii) the application of oxygen-protective Eu monolayers-without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime-and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon.

  4. Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

    Directory of Open Access Journals (Sweden)

    Noor Faizah Z.A.

    2016-01-01

    Full Text Available This paper presents the modeling and optimization of 14nm gate length CMOS transistor which is down-scaled from previous 32nm gate length. High-k metal gate material was used in this research utilizing Hafnium Dioxide (HfO2 as dielectric and Tungsten Silicide (WSi2 and Titanium Silicide (TiSi2 as a metal gate for NMOS and PMOS respectively. The devices are fabricated virtually using ATHENA module and characterized its performance evaluation via ATLAS module; both in Virtual Wafer Fabrication (VWF of Silvaco TCAD Tools. The devices were then optimized through a process parameters variability using L9 Taguchi Method. There were four process parameter with two noise factor of different values were used to analyze the factor effect. The results show that the optimal value for both transistors are well within ITRS 2013 prediction where VTH and IOFF are 0.236737V and 6.995705nA/um for NMOS device and 0.248635 V and 5.26nA/um for PMOS device respectively.

  5. Novel Accident-Tolerant Fuel Meat and Cladding

    Energy Technology Data Exchange (ETDEWEB)

    Robert D. Mariani; Pavel G Medvedev; Douglas L Porter; Steven L Hayes; James I. Cole; Xian-Ming Bai

    2013-09-01

    A novel accident-tolerant fuel meat and cladding are here proposed. The fuel meat design incorporates annular fuel with inserts and discs that are fabricated from a material having high thermal conductivity, for example niobium. The inserts are rods or tubes. Discs separate the fuel pellets. Using the BISON fuel performance code it was found that the peak fuel temperature can be lowered by more than 600 degrees C for one set of conditions with niobium metal as the thermal conductor. In addition to improved safety margin, several advantages are expected from the lower temperature such as decreased fission gas release and fuel cracking. Advantages and disadvantages are discussed. An enrichment of only 7.5% fully compensates the lost reactivity of the displaced UO2. Slightly higher enrichments, such as 9%, allow uprates and increased burnups to offset the initial costs for retooling. The design has applications for fast reactors and transuranic burning, which may accelerate its development. A zirconium silicide coating is also described for accident tolerant applications. A self-limiting degradation behavior for this coating is expected to produce a glassy, self-healing layer that becomes more protective at elevated temperature, with some similarities to MoSi2 and other silicides. Both the fuel and coating may benefit from the existing technology infrastructure and the associated wide expertise for a more rapid development in comparison to other, more novel fuels and cladding.

  6. Structural and electronic properties of XSi{sub 2} (X = Cr, Mo, and W)

    Energy Technology Data Exchange (ETDEWEB)

    Shugani, Mani, E-mail: shugani.mani@gmail.com [Sadhu Vaswani College, Bairagarh, Department of Physics (India); Aynyas, Mahendra [C. S. A. Govt. P. G. College, Department of Physics (India); Sanyal, S. P. [Barkatullah University, Department of Physics (India)

    2015-07-15

    The structural and electronic properties of metal silicides XSi{sub 2} (X = Cr, Mo, and W), which crystallize in tetragonal structure, are investigated systematically using the first-principle density functional theory. The total energies are computed as a function of volume and fitted to the Birch equation of state. The ground-state properties such as equilibrium lattice constants a{sub 0} and c{sub 0}, bulk modulus B, its pressure derivative B, B′, and the density of states at the Fermi level, N(E{sub F}), are calculated and compared with other experimental and theoretical results, showing good agreement. The calculated band structure indicates that XSi{sub 2} compounds are semimetallic in nature. From the present study, we predict the structural and electronic properties of CrSi{sub 2} in the tetragonal phase and indicate that CrSi{sub 2} is energetically more stable than MoSi{sub 2} and WSi{sub 2}. Analyzing the bonding properties of the three metal silicides, we observe that WSi{sub 2} has a strong covalent bonding due to W 5d electrons.

  7. The effect of the rapid thermal annealing on the interdiffusion and the reaction at the interface of the binary system Cr/Si

    Energy Technology Data Exchange (ETDEWEB)

    Merabet, A. [Laboratoire Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, Setif 19000 (Algeria)]. E-mail: merabet_abdelali@yahoo.fr

    2004-12-15

    In order to understand the growth mechanism of the silicides and the effect of the dopant on the electrical activity, a thin layer of chromium (100 nm) is deposited on the single crystal silicon (1 0 0) substrate implanted (10{sup 15} As{sup +} atoms/cm{sup 2}, 100 keV) and non implanted. Afterwards, we performed a rapid thermal annealing in the interval of temperature (450-600 deg. C) for a fixed duration of 45 s. The samples are analyzed by X ray-diffraction (XRD) and Rutherford backscattering spectrometry (RBS). The electrical activity has been investigated by the method of the four-point probes. The analysis of the samples by XRD and RBS showed that the rapid thermal annealing (RTA) leads to a reaction at the interface Cr/Si inducing the formation and the growth of the unique silicide CrSi{sub 2}. It is also established that the kinetics growth of CrSi{sub 2} presents a linear evolution with temperature. This fact shows that the growth is governed by a chemical reaction of the interface. Sheet resistance measurements have been performed to study the electrical behavior for these structures. It is worth to point out that the presence of the implanted arsenic in the single crystal silicon increased the resistance in a significant manner.

  8. Electronic structure of ceramic CrSi2 and WSi2: Compton spectroscopy and ab-initio calculations

    Science.gov (United States)

    Bhamu, K. C.; Sahariya, Jagrati; Ahuja, B. L.

    2013-05-01

    We report electron momentum densities of stable phases of transition metal disilicides CrSi2 (C40 hexagonal) and WSi2 (C11b body centered tetragonal) using a high energy 137Cs Compton spectrometer. To support the experimental investigations, we have computed theoretical Compton profiles, energy bands and density of states of both the isoelectronic compounds using density functional theory within linear combination of atomic orbitals. Theoretical calculations for the energy bands and density of states are performed for both the hexagonal and tetragonal phases of these silicides. In the tetragonal phase, both the silicides show metallic behavior. The hexagonal CrSi2 shows an energy gap (0.28 eV) between the valence band maximum at the L point and the conduction band minimum at the M point of the Brillouin zone, whereas the hexagonal WSi2 shows a semimetallic character. We have also scaled the experimental and theoretical profiles of the stable phases (hexagonal for CrSi2 and tetragonal for WSi2) on equal-valence-electron-density, which show more covalent character of WSi2 than that of CrSi2. The nature of bonding is in accordance with a present Mulliken's population analysis.

  9. Materials and device issues in the formation of sub-100-nm junctions

    Science.gov (United States)

    Osburn, C. M.; Chevacharoenkul, S.; Wang, Q. F.; Markus, K.; McGuire, G. E.; Smith, P. L.

    1993-04-01

    This paper compares the materials and device issues associated with two alternative techniques for the formation of ultrashallow junctions: 1) the use of preamorphization and low energy dopant implantation, combined with rapid, low-temperature annealing; and 2) the use of metal suicides as a diffusion source (SADS) where dopants are implanted into CoSi 2 and subsequently diffused into silicon. For conventionally-formed, ultrashallow junctions, preamorphization with either silicon or germanium does not result in shallower junctions. The enhanced diffusion associated with the preamorphization implant damage compensates for the reduction in channeling. Preamorphization does, however, give low sheet resistance junctions and high dopant activation after recrystallization at 550°C. Considerable dopant motion (˜ 50 nm) is observed in the tail region, near the junction, after 10 s of annealing at a relatively low temperature (800°C). The SADS process is seen to produce low leakage n + and p + diodes with less than 10 nm of dopant diffusion beyond the silicide/silicon interface, using a very low thermal budget process. By confining the implantation to within the suicide, no crystal defects are created in the underlying silicon. With the SADS process, the limitation on scaling the junction depth lies in producing thin, stable suicide films. Agglomeration of the silicide and pullback along feature edges restrict the maximum thermal cycle and the minimum allowable film thickness.

  10. Technology for manufacturing dispersion nuclear fuel at IPEN/CNEN-SP

    Energy Technology Data Exchange (ETDEWEB)

    Durazzo, Michelangelo; Souza, Jose Antonio Batista de; Carvalho, Elita Fontenele Urano de; Saliba-Silva, Adonis Marcelo; Riella, Humberto Gracher, E-mail: mdurazzo@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2011-07-01

    IPEN/CNEN-SP has been working for increasing radioisotope production in order to supply the expanding demand for radiopharmaceutical medicines requested by the Brazilian welfare. To reach this objective, the IPEN's IEA-R1 research reactor power capacity has been continuously increased starting from 2 MW aiming to reach 5 MW. In addition, another research reactor with power substantially greater than that of the IEA-R1 will be constructed in Brazil, the Brazilian Multipurpose Reactor - RMB. Since 1988, IPEN has been manufacturing its own fuel element, initially based on U{sub 3}O{sub 8}-Al dispersion fuel plates with 2.3 g U/cm{sup 3}. To support the reactor power increase and the new research reactor, higher uranium density into the fuel had to be achieved for better irradiation flux and also to minimize the irradiated fuel elements to be stored. Uranium silicide was the first chosen option. The U-Mo alloy is considered for future use. This paper describes the results of this program and the current status of silicide fuel fabrication and qualification, as well as the status of U Mo-Al dispersion fuel development. (author)

  11. Isothermal and cyclic oxidation resistance of pack siliconized Mo–Si–B alloy

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Sanjib, E-mail: sanjib@barc.gov.in

    2017-08-31

    Highlights: • Pack-siliconizing of Mo–Si–B alloy improves its oxidation resistance at 750, 900 and 1400 °C. • A marginal weight change of the coated alloy is detected in isothermal and cyclic oxidation tests. • Kinetics of growth of protective SiO{sub 2} scale is much faster at 1400 °C. • Self-healing SiO{sub 2} is developed at the cracks formed in MoSi{sub 2} layer during cyclic oxidation tests. - Abstract: Oxidation behaviour of MoSi{sub 2} coated Mo–9Si–8B–0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi{sub 2} layer during thermal cycling. The dominant oxidation mechanisms at 750–900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

  12. Enhancement of carrier collection efficiency in photodiodes by introducing a salicided polysilicon contact

    Science.gov (United States)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-06-01

    Suppressing recombination on silicon contact interfaces is a topic being addressed for various applications such as photo sensors and solar cells. Although salicidation of the contacts enables low contact resistance, it is usually avoided for these applications as it increases the recombination rate on the contact interfaces. This study explores the use of salicided polysilicon buffer layer in photodiodes' contacts, acting to reduce the recombination rate at the silicide contact. The contact incorporates the advantage of low contact resistance due to silicidation with polysilicon interface that reduces recombination by creating carrier selective junction. The introduction of a polysilicon interlayer was found to increase the short circuit current and the fill factor and to decrease the dark leakage current. The improvement in the light collection parameters was found to be more pronounced under high light intensity (1000 W/m2) than under low light intensity (400 W/m2). The benevolent effect of the polysilicon interlayer is expected to be noticed in devices that are sensitive to contacts' performance. This includes not only image sensors but also high efficiency silicon solar cells.

  13. Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001

    Energy Technology Data Exchange (ETDEWEB)

    Weber, E. R.

    2002-02-01

    This report describes the major progress in understanding the physics of transition metals in silicon and their possible impact on the efficiency of solar cells that was achieved during the three-year span of this subcontract. We found that metal-silicide precipitates and dissolved 3d transition metals can be relatively easily gettered. Gettering and passivating treatments must take into account the individuality of each transition metal. Our studies demonstrated how significant is the difference between defect reactions of copper and iron. Copper does not significantly affect the minority-carrier diffusion length in p-type silicon, at least as long as its concentration is low, but readily precipitates in n-type silicon. Therefore, copper precipitates may form in the area of p-n junctions and cause shunts in solar cells. Fortunately, copper precipitates are present mostly in the chemical state of copper-silicide and can relatively easily be dissolved. In contrast, iron was found to form clusters of iron-oxides and iron-silicates in the wafers. These clusters are thermodynamically stable even in high temperatures and are extremely difficult to remove. The formation of iron-silicates was observed at temperatures over 900C.

  14. Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA

    Science.gov (United States)

    Youwei, Zhang; Dawei, Xu; Li, Wan; Zhongjian, Wang; Chao, Xia; Xinhong, Cheng; Yuehui, Yu

    2012-03-01

    Nickel fully silicided (Ni-FUSI) gate material has been fabricated on a HfO2 surface to form a Ni-FUSI gate/HfO2/Si/Al (MIS) structure by using an ultra-high vacuum e-beam evaporation (EBV) method followed by a one step rapid thermal annealing (RTA) treatment. X-ray diffraction (XRD) and Raman spectroscopy were used to reveal the microstructures and electrical properties of the MIS structure. Results show that a one step post RTA treatment is enough to promote the full reaction of nickel silicide, compared with multiple RTA treatments. Furthermore, the HfO2 gate dielectric film is sensitive to heat treatment, and multiple RTA treatments can damage the electrical properties of the HfO2 film rather than improve them. By optimization of the sample fabrication technique, the MIS capacitor produces good high-frequency capacitance-voltage curves with a hysteresis of 30 mV, a work function of about 5.44-5.53 eV and leakage current density of only 1.45 × 10-8 A/cm2 at -1 V gate bias.

  15. Schottky-barrier heights of single-crystal NiSi2 on Si(111): The effect of a surface p-n junction

    Science.gov (United States)

    Tung, R. T.; Ng, K. K.; Gibson, J. M.; Levi, A. F. J.

    1986-05-01

    Current-voltage, capacitance-voltage, and activation-energy measurements obtained for epitaxial nickel silicides grown on Si(111) have exposed the importance of the temperature used to flash-evaporate oxide off the surface prior to metal deposition. Near-ideal behavior is found for Schottky barriers grown on substrates cleaned at ~820 °C in ultrahigh vacuum. The Fermi-level positions at the interfaces of single-crystal type-A and type-B NiSi2 are shown to differ by greater than 100 meV. Transmission electron microscopy demonstrated the epitaxial perfection of these silicide layers. At a cleaning temperature of 1050 °C, the apparent Schottky-barrier heights increased substantially for substrates with a doping concentration of ND less than approximately 1015 cm-3. This increase is due to the conversion of the n-type semiconductor surface region to p type during the 1050 °C anneal. The presence of this p-n junction results in a high apparent Schottky-barrier height (>~0.75 eV) which no longer bears an immediate relationship to the interface Fermi-level position. Recent discrepancies reported by different groups concerning the barrier heights of NiSi2 on Si(111) are attributed to this effect.

  16. Effect of acid leaching conditions on impurity removal from silicon doped by magnesium

    Directory of Open Access Journals (Sweden)

    Stine Espelien

    2017-07-01

    Full Text Available The effect of magnesium addition into a commercial silicon and its leaching refining behavior is studied for producing solar grade silicon feedstock. Two different levels of Mg is added into a commercial silicon and the leaching of the produced alloys by 10% HCl solution at 60 ℃ for different durations is performed. It is shown that the microstructure of the alloy and in particular the distribution of eutectic phases is dependent on the amount of the added Mg. Moreover, the metallic impurities in silicon such as Fe, Al, Ca and Ti are mainly forming silicide particles with different compositions. These silicides are physically more detached from the primary silicon grains and their removal through chemical and physical separation in leaching is better for higher Mg additions. It is observed that the leaching is more effective for the purification of smaller silicon particles produced from each Mg-doped silicon alloy. It is shown that acid leaching by the applied method is effective to reach more than 70% of phosphorous removal. It is also shown that the purity of silicon is dependent on the total Mg removal and effectiveness of leaching on removing the Mg2Si phase.

  17. Rapid microwaves synthesis of CoSix/CNTs as novel catalytic materials for hydrogenation of phthalic anhydride

    Science.gov (United States)

    Zhang, Liangliang; Chen, Xiao; Jin, Shaohua; Guan, Jingchao; Williams, Christopher T.; Peng, Zhijian; Liang, Changhai

    2014-09-01

    CoSix/CNTs catalysts with different CoSix phases (CoSi, CoSi2) have been rapidly synthesized via a microwave-assisted route and applied for the liquid phase hydrogenation of phthalic anhydride. The synthesized catalysts were analyzed and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy-energy dispersive X-ray spectroscopy, thermogravimetric/derivative thermogravimetric analysis. The reaction progress of cobalt silicides and the ratio of Co:Si were monitored at different microwave irradiation times by XRD, giving insight into the formation mechanism. Compared to the Co/CNTs catalyst, all the prepared CoSix/CNTs catalysts exhibited excellent activity and good selectivity to phthalide under mild reaction conditions (180-220 °C and 4.0 MPa H2). This novel methodology can be applied to the synthesis of other transition metal silicides such as FeSi, Ni2Si, and Cu4Si.

  18. Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing

    Science.gov (United States)

    Lai, Kuei-Chang; Wu, Pei-Yu; Chen, Chih-Ming; Wei, Tzu-Chien; Wu, Chung-Han; Feng, Shien-Ping

    2016-10-01

    Front-side metallization of a Si wafer was carried out using electroless deposition of nickel-phosphorus (Ni-P) catalyzed by polyvinylpyrrolidone-capped palladium nanoclusters (PVP-nPd). A 3-[2-(2-Aminoethylamino)ethylamino] propyl-trimethoxysilane (ETAS) layer was covalently bonded on the Si surface as bridge linker to the Pd cores of PVP-nPd clusters for improving adhesion between the Ni-P layer and the Si surface. To investigate the effects of an interfacial ETAS layer on the Ni silicide formation at the Ni-P/Si contact, the Ni-P-coated Si samples were thermally annealed via rapid thermal annealing (RTA) from 500°C to 900°C for 2 min. To compare with the ETAS sample, the sputtered Ni layer on Si and electroless Ni-P layer on ion-Pd-catalyzed Si (both are standard processes) were also investigated. The microstructural characterizations for the Ni-P or Ni layer deposited on the Si wafer were performed using x-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. Our results showed that the ETAS layer acted as a barrier to slow the atomic diffusion of Ni toward the Si side. Although the formation of Ni silicides required a higher annealing temperature, the adhesion strength and contact resistivity measurements of annealed Ni-P/Si contacts showed satisfactory results, which were essential to the device performance and reliability during thermal annealing.

  19. Pack cementation coatings for alloys

    Energy Technology Data Exchange (ETDEWEB)

    He, Yi-Rong; Zheng, Minhui; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States)

    1996-08-01

    The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on a Cr-Cr{sub 2}Nb alloy in a single processing step. The morphology and composition of the coating depended both on the composition of the pack and on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi{sub 2} and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. In cyclic and isothermal oxidation in air at 700 and 1050{degrees}C, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation by the formation of a Ge-doped silica film. The codeposition and diffusion of aluminum and chromium into low alloy steel have been achieved using elemental Al and Cr powders and a two-step pack cementation process. Sequential process treatments at 925{degrees}C and 1150{degrees}C yield dense and uniform ferrite coatings, whose compositions are close to either Fe{sub 3}Al or else FeAl plus a lower Cr content, when processed under different conditions. The higher content of Al in the coatings was predicted by thermodynamic calculations of equilibrium in the gas phase. The effect of the particle size of the metal powders on the surface composition of the coating has been studied for various combinations of Al and Cr powders.

  20. Nanostructured TiO{sub x} film on Si substrate: room temperature formation of TiSi{sub x} nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Chiodi, Mirco, E-mail: chiodi@dmf.unicatt.it; Cavaliere, Emanuele; Kholmanov, Iskandar [Universita Cattolica del Sacro Cuore di Brescia, Dipartimento di Matematica e Fisica (Italy); Simone, Monica de; Sakho, Oumar; Cepek, Cinzia [CNR-INFM, Laboratorio Nazionale TASC (Italy); Gavioli, Luca [Universita Cattolica del Sacro Cuore di Brescia, Dipartimento di Matematica e Fisica (Italy)

    2010-09-15

    We present a morphologic and spectroscopic study of cluster-assembled TiO{sub x} films deposited by supersonic cluster beam source on clean silicon substrates. Data show the formation of nanometer-thick and uniform titanium silicides film at room temperature (RT). Formation of such thick TiSi{sub x} film goes beyond the classical interfacial limit set by the Ti/Si diffusion barrier. The enhancement of Si diffusion through the TiO{sub x} film is explained as a direct consequence of the porous film structure. Upon ultra high vacuum annealing beyond 600 {sup o}C, TiSi{sub 2} is formed and the oxygen present in the film is completely desorbed. The morphology of the nanostructured silicides is very stable for thermal treatments in the RT-1000 {sup o}C range, with a slight cluster size increase, resulting in a film roughness an order of magnitude smaller than other TiO{sub x}/Si and Ti/Si films in the same temperature range. The present results might have a broad impact in the development of new and simple TiSi synthesis methods that favour their integration into nanodevices.

  1. Surface enhanced Raman spectroscopy platform based on graphene with one-year stability

    Energy Technology Data Exchange (ETDEWEB)

    Tite, Teddy [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France); Barnier, Vincent [Ecole Nationale Supérieure des Mines, CNRS, Laboratoire Georges Friedel UMR 5307, 158 cours Fauriel, F-42023 Saint-Etienne (France); Donnet, Christophe, E-mail: Christophe.Donnet@univ-st-etienne.fr [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France); Loir, Anne–Sophie; Reynaud, Stéphanie; Michalon, Jean–Yves; Vocanson, Francis; Garrelie, Florence [Univ Lyon, UJM-Saint-Etienne, CNRS, Laboratoire Hubert Curien UMR 5516, 18 rue Professeur Benoit Lauras, F-42000 Saint-Etienne (France)

    2016-04-01

    We report the synthesis, characterization and use of a robust surface enhanced Raman spectroscopy platform with a stable detection for up to one year of Rhodamine R6G at a concentration of 10{sup −6} M. The detection of aminothiophenol and methyl parathion, as active molecules of commercial insecticides, is further demonstrated at concentrations down to 10{sup −5}–10{sup −6} M. This platform is based on large scale textured few-layer (fl) graphene obtained without any need of graphene transfer. The synthesis route is based on diamond-like carbon films grown by pulsed laser deposition, deposited onto silicon substrates covered by a Ni layer prior to diamond-like carbon deposition. The formation of fl-graphene film, confirmed by Raman spectroscopy and mapping, is obtained by thermal annealing inducing the diffusion of Ni atoms and the concomitant formation of nickel silicide compounds, as identified by Raman and Auger electron spectroscopies. The textured fl-graphene films were decorated with gold nanoparticles to optimize the efficiency of the SERS device to detect organic molecules at low concentrations. - Highlights: • Synthesis of graphene film from amorphous carbon by pulsed laser deposition with nickel catalyst • Large scale textured graphene with nanoscale roughness obtained through nickel silicide formation • Films used for surface enhanced Raman spectroscopy detection of organophosphate compounds • Stability of the SERS platforms over up to one year.

  2. Magnesium Production by Silicothermic Reduction of Dolime in Pre-prepared Dolomite Pellets

    Science.gov (United States)

    Fu, Da-Xue; Zhang, Ting-An; Guan, Lu-Kui; Dou, Zhi-He; Wen, Ming

    2016-12-01

    A novel process has been proposed for magnesium production, in which powder materials including dolomite, ferrosilicon, fluorite and binder are mixed to produce pellets. Kinetics of the silicothermic reduction using the pre-prepared dolomite pellets was investigated by a non-isothermal, flowing argon-protected gravimetric technique at a temperature range from 1323 K to 1673 K. The results suggest that the process is controlled by a chemical reaction, with the second-order chemical reaction model providing the best representation of the process. The apparent activation energy was determined to be 280 kJ/mol. Calcium silicide (was found in the pellet after calcinations. The silicothermic process in the pre-prepared dolomite pellets is possibly a solid-liquid reaction since calcium silicide transformed into liquid alloy, which reduced diffusion resistance of silicon during the reduction process. The gas-film mass transfer may have some effect on the reduction kinetics but is not the major rate-limiting step.

  3. Printed Nano Cu and NiSi Contacts and Metallization for Solar Cell Modules

    Energy Technology Data Exchange (ETDEWEB)

    Carmody, Michael John [Intrinsiq Materials Inc., Rochester, NY (United States)

    2017-10-11

    There has long been a desire to replace the front-side silver contacts in silicon solar cells. There are two driving forces to do this. First, silver is an expensive precious metal. Secondly, the process to use silver requires that it be formulated into screen print pastes that need a lead-containing glass frit, and the use of lead is forbidden in many parts of the world. Because of the difficulty in replacing these pastes and the attendant processes, lead exemptions have granted to solar cells. Copper has been the replacement metal of choice because it is significantly cheaper than silver and is very close to silver in electrical conductivity. Using processes which do not use lead, obviates it as an environmental contaminant. However, copper cannot be in contact with the silicon of the cell since it migrates through the silicon and causes defects which severely damage the efficiency of the cell. Hence, a conductive barrier must be placed between the copper and silicon and nickel, and especially nickel silicide, have been shown to be materials of choice. However, nickel must be sputtered and annealed to create the nickel silicide barrier, and copper has either been sputtered or plated. All of these processes require expensive, specialized equipment and plating uses environmentally unfriendly chemicals. Therefore, Intrinsiq proposed using printed nano nickel silicide ink (which we had previously invented) and printed nano copper ink to create these electrodes and barriers. We found that nano copper ink could be readily printed and sintered under a reducing atmosphere to give highly conductive grids. We further showed that nano nickel silicide ink could be readily jetted into grids on top of the silicon cell. It could then be annealed to create a barrier. However, it was found that the combination of printed NiSi and printed Cu did not give contact resistivity good enough to produce efficient cells. Only plated copper on top of the printed NiSi gave useful contact

  4. Experimental Study of Codeposition Electrochemistry Using Mixtures of ScCl3 and YCl3 in LiCl-KCl Eutectic Salt at 500°C

    Energy Technology Data Exchange (ETDEWEB)

    Shaltry, Michael R. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Yoo, Tae-Sic [Idaho National Lab. (INL), Idaho Falls, ID (United States); Fredrickson, Guy L. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2017-09-12

    Cyclic voltammetry and chronopotentiometry tests were applied to molten LiCl-KCl eutectic at 500 °C including amounts of ScCl3 and YCl3. The purpose of the testing was to observe the effect of applied electrical current on the codeposition of scandium and yttrium, which were chosen as surrogate elements for uranium and plutonium, respectively. Features of the work were to vary the concentration of ScCl3 (at relatively low concentrations) as well as varying the applied current, all with a fixed concentration of YCl3. Results of the experiments could provide insight of uranium electrorefining and may provide evidence, which suggests the electrorefiner could be operated at lower UCl3 concentration whereby codeposition (U and Pu) could be more effectively controlled.

  5. Low work function materials for microminiature energy conversion and recovery applications

    Energy Technology Data Exchange (ETDEWEB)

    Zavadil, Kevin R.; Ruffner, Judith A.; King, Donald B.

    2003-05-13

    Low work function materials are disclosed together with methods for their manufacture and integration with electrodes used in thermionic conversion applications (specifically microminiature thermionic conversion applications). The materials include a mixed oxide system and metal in a compositionally modulated structure comprised of localized discontinuous structures of material that are deposited using techniques suited to IC manufacture, such as rf sputtering or CVD. The structures, which can include layers are then heated to coalescence yielding a thin film that is both durable and capable of electron emission under thermionic conversion conditions used for microminiature thermionic converters. Using the principles of the invention, thin film electrodes (emitters and collectors) required for microconverter technology are manufactured using a single process deposition so as to allow for full fabrication integration consistent with batch processing, and tailoring of emission/collection properties. In the preferred embodiment, the individual layers include mixed BaSrCaO, scandium oxide and tungsten.

  6. Novel acridone-modified MCM-41 type silica: Synthesis, characterization and fluorescence tuning

    Directory of Open Access Journals (Sweden)

    Maximilian Hemgesberg

    2011-06-01

    Full Text Available A Mobil Composition of Matter (MCM-41 type mesoporous silica material containing N-propylacridone groups has been successfully prepared by co-condensation of an appropriate organic precursor with tetraethyl orthosilicate (TEOS under alkaline sol–gel conditions. The resulting material was fully characterized by means of X-ray diffraction (XRD, N2-adsorption–desorption, transmission electron microscopy (TEM, IR and UV–vis spectroscopy, as well as 29Si and 13C CP-MAS NMR techniques. The material features a high inner surface area and a highly ordered two-dimensional hexagonal pore structure. The fluorescence properties of the organic chromophore can be tuned via complexation of its carbonyl group with scandium triflate, which makes the material a good candidate for solid state sensors and optics. The successful synthesis of highly ordered MCM materials through co-condensation was found to be dependent on the chemical interaction of the different precursors.

  7. The Influence of Titania Electrode Modification with Lanthanide Ions Containing Thin Layer on the Performance of Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Maciej Zalas

    2012-01-01

    Full Text Available The lanthanide and scandium groups ions (except Pm and Ac have been used as dopants of TiO2 film in dye-sensitized solar cells. The X-ray diffraction spectra show that the modification has no influence on the structure of the electrode; however, the diffuse reflectance UV-Vis measurements exhibit significant changes in the electronic properties of modified electrodes. The appearance of energy barrier preventing photoexcited electron back-transfer was confirmed for Sc, Ce, Sm, Tb, Ho, Tm, and Lu modified cells. The best photoconversion performance of 8.88 and 8.80% was found for samples modified with Ce and Yb, respectively, and it was greater by 31.4 and 30.2% than that of a unmodified cell.

  8. Magnetic anisotropy in the incommensurate ScFe{sub 4}Al{sub 8} system

    Energy Technology Data Exchange (ETDEWEB)

    Rećko, K., E-mail: k.recko@uwb.edu.pl [Faculty of Physics, University of Białystok, K. Ciołkowskiego 1L, 15-245 Białystok (Poland); Dobrzyński, L. [National Centre for Nuclear Research, A. Soltan 7, 05-400 Otwock-Świerk (Poland); Waliszewski, J.; Szymański, K. [Faculty of Physics, University of Białystok, K. Ciołkowskiego 1L, 15-245 Białystok (Poland)

    2015-08-15

    Neutron scattering and magnetization data are used for estimation of the spin ordering in ScFe{sub 4}Al{sub 8}. Results of experimental measurements are compared with the ground state configurations obtained by simulated annealing algorithms. The origins of the magnetocrystalline anisotropy of the scandium intermetallic alloy and the conditions of the coexistence of two different magnetic modulations as a function of the exchange integrals are discussed. The influence of the dipolar interactions for the noncollinearity and incommensurability in ScFe{sub 4}Al{sub 8} was determined. - Highlights: • We found dipolar and DM interactions as the anisotropy origins of 3d–3d–3p alloy. • We covered the explanation of incommensurability and noncollinearity of ScFe{sub 4}Al{sub 8}. • We discussed the magnetism resulting from competitiveness of exchange effects.

  9. Enhanced hardness in epitaxial TiAlScN alloy thin films and rocksalt TiN/(Al,Sc)N superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Bivas [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Lawrence, Samantha K.; Bahr, David F. [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Schroeder, Jeremy L.; Birch, Jens [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Sands, Timothy D. [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-10-13

    High hardness TiAlN alloys for wear-resistant coatings exhibit limited lifetimes at elevated temperatures due to a cubic-AlN to hexagonal-AlN phase transformation that leads to decreasing hardness. We enhance the hardness (up to 46 GPa) and maximum operating temperature (up to 1050 °C) of TiAlN-based coatings by alloying with scandium nitride to form both an epitaxial TiAlScN alloy film and epitaxial rocksalt TiN/(Al,Sc)N superlattices on MgO substrates. The superlattice hardness increases with decreasing period thickness, which is understood by the Orowan bowing mechanism of the confined layer slip model. These results make them worthy of additional research for industrial coating applications.

  10. In situ TEM investigation of microstructural behavior of superplastic Al–Mg–Sc alloy

    Energy Technology Data Exchange (ETDEWEB)

    Dám, Karel, E-mail: damk@vscht.cz [Department of Metals and Corrosion Engineering, Institute of Chemical Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Institute of Physics of the ASCR, Na Slovance 2, 182 21 Prague 8 (Czech Republic); Lejček, Pavel, E-mail: lejcekp@fzu.cz [Institute of Physics of the ASCR, Na Slovance 2, 182 21 Prague 8 (Czech Republic); Michalcová, Alena [Department of Metals and Corrosion Engineering, Institute of Chemical Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic)

    2013-02-15

    Dynamic changes in microstructure of the superplastic ultrafine-grained Al–3Mg–0.2Sc (wt.%) alloy refined by equal-channel angular pressing (ECAP). were observed by in situ transmission electron microscopy at temperatures up to 300 °C (annealing and tensile deformation) in order to simulate the initial stages of superplastic testing. It was found that the microstructure changes significantly during the preheating before the superplastic deformation, which was accompanied by decreased microhardness. During the deformation at 300 °C, high dislocation activity as well as motion of low-angle grain boundaries was observed while high-angle grain boundaries did not move due to the presence of scandium in the alloy. - Highlights: ► We performed in situ TEM annealing and straining on superplastic Al–Mg–Sc alloy. ► We simulated the conditions of early stages of superplastic testing. ► Significant changes in microstructure occur during preheating before deformation.

  11. High strength aluminum cast alloy: A Sc modification of a standard Al–Si–Mg cast alloy

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, Arfan, E-mail: engr.arfan@gmail.com [Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Material Science and Engineering, Beihang University, Beijing 100191 (China); Xu, Cong; Xuejiao, Wang [Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Material Science and Engineering, Beihang University, Beijing 100191 (China); Hanada, Shuji [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Yamagata, Hiroshi [Center for Advanced Die Engineering and Technology, Gifu University, 1-1 Yanagido, Gifu City, Gifu 501-1193 (Japan); Hao, LiRong [Hebei Sitong New Metal Material Co., Ltd., Baoding 071105 (China); Chaoli, Ma [Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Material Science and Engineering, Beihang University, Beijing 100191 (China)

    2014-05-01

    A standard Aluminum–Silicon–Magnesium cast alloy (A357 foundry alloy without Beryllium) modified with different weight percentages of Scandium (Sc), has been studied to evaluate the effects of Sc contents on microstructure and strength. Study has been conducted under optimized parameters of melting, casting and heat treatment. Characterization techniques like optical microscopy, SEM, TEM and tensile testing were employed to analyze the microstructure and mechanical properties. Results obtained in this research indicate that with the increase of Sc contents up to 0.4 wt%, grain size is decreased by 80% while ultimate tensile strength and hardness are increased by 28% and 19% respectively. Moreover along with the increase in strength, elongation to failure is also increased up to 165%. This is quite interesting behavior because usually strength and ductility have inverse relationship.

  12. Modification of aluminium alloys with rare metals – the basis for advanced materials in construction and transport

    Directory of Open Access Journals (Sweden)

    Skachkov Vladimir Mikchaylovich

    2016-06-01

    Full Text Available The method of process powder injection into aluminum melt shows much promise. Scandium is injected by the high-temperature exchange reaction between the salt melt and aluminum. The best salt compositions were selected. The results of the process are considered to depend on the initial salts. A series of fusions was performed under production conditions at the Kamensk-Uralskii metallurgical plant. It was shown that the injection method for production of aluminoscandium master alloys is technologically feasible. To protect intellectual property of authors, employees of the Institute of Solid State Chemistry, Ural branch of RAS (Russia a patent «Method of alloying of aluminium or alloys on its basis» RU № 2534182 of 27.11.2014 was registered.

  13. Characterization of potassic materials of Pocos de Caldas alkaline massif, Southeastern Brazil; Caracterizacao de materiais potassicos do macico alcalino de Pocos de Caldas (MG)

    Energy Technology Data Exchange (ETDEWEB)

    Goncalves, P.; Navarro, F.C.; Roveri, C.D. [Universidade Federal de Alfenas (UNIFAL), MG (Brazil); Bergerman, M.G., E-mail: pattypgpatty@gmail.com [Universidade de Sao Paulo (USP), SP (Brazil)

    2016-07-01

    Potassium, which has featured in Brazil's agricultural sector and in the world's in the application of fertilizers, is present in magmatic rocks, such as nepheline syenite and phonolite, found in the Alkaline Massif of Pocos de Caldas (AMPC). The rare earth elements (REE), in turn, also occur in this region and have important uses in various industrial fields. The aim of this study was to investigate the potential of potassic rocks of AMPC in the fertilizer and rare earths industry. Five samples were collected and characterized. It was observed that there was no preferential concentration by granulometric range of potassium oxide, alumina, silica and iron oxide. Feldspathic mass, potash feldspar, and muscovite were found in all samples. The samples show REE with amounts greater than those found in the earth's crust, except for lutetium and scandium and possessed average content of potassium oxide from 8.70 to 14.40%. (author)

  14. Bandgap in Al{sub 1-x}Sc{sub x}N

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Ruopeng; Evans, Sarah R.; Gall, Daniel [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2013-03-18

    Aluminum scandium nitride (Al{sub 1-x}Sc{sub x}N) layers deposited by reactive magnetron co-sputtering on sapphire 0001 substrates at 850 Degree-Sign C are epitaxial single-crystals for x {<=} 0.20. Their in-plane lattice constant increases linearly (3.111 + 0.744x A) while the out-of-plane constant remains at 4.989 {+-} 0.005 A. Optical absorption indicates a band gap of 6.15-9.32x eV and a linearly increasing density of defect states within the gap. The average bond angle decreases linearly with x, suggesting a trend towards the metastable hexagonal-ScN structure. However, an anomalous decrease at x = 0.20 indicates a structural instability which ultimately leads to phase separated rock-salt ScN grains for x > 0.4.

  15. Structural characterization and ytterbium spectroscopy in Sc{sub 2}O{sub 3} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Galceran, M. [Fisica i Cristal.lografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Campus Sescelades, c/ Marcel. li Domingo, s/n, E-43007 Tarragona (Spain); Pujol, M.C., E-mail: mariacinta.pujol@urv.ca [Fisica i Cristal.lografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Campus Sescelades, c/ Marcel. li Domingo, s/n, E-43007 Tarragona (Spain); Carvajal, J.J.; Mateos, X. [Fisica i Cristal.lografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Campus Sescelades, c/ Marcel. li Domingo, s/n, E-43007 Tarragona (Spain); Zaldo, C. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Cientificas (CSIC), c/ Sor Juana Ines de la Cruz 3, E-28049 Madrid (Spain); Aguilo, M.; Diaz, F. [Fisica i Cristal.lografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Campus Sescelades, c/ Marcel. li Domingo, s/n, E-43007 Tarragona (Spain)

    2010-08-15

    Ytterbium-doped scandium oxide nanocrystals measuring less than 25 nm with compositions of Sc{sub 2-x}Yb{sub x}O{sub 3} (x=0.001-1) were prepared using the modified Pechini method. The Yb:Sc{sub 2}O{sub 3} nanocrystals were obtained by calcination at low temperature such as 1073 K for 2 h. X-ray powder diffraction (XRD) and transmission electronic microscopy (TEM) were used to perform the structural characterization of nanocrystals; these studies indicated that the nanocrystals have high crystalline quality with cubic structure and Ia3-bar space group. The morphology and particle size were studied using electron microscopy. A detailed study of the effect of the nanodimension and the ytterbium concentration on the spectroscopic characteristics of Yb{sup 3+} as an active ion was carried out in terms of optical absorption, optical emission and fluorescence decay time at room and low temperature.

  16. Recovery and purification of nickel-63 from HFIR-irradiated targets

    Energy Technology Data Exchange (ETDEWEB)

    Williams, D.F.; O`Kelley, G.D.; Knauer, J.B.; Porter, C.E.; Wiggins, J.T.

    1993-06-01

    The production of large quantities of high-specific-activity {sup 63}Ni (>10 Ci/g) requires both a highly enriched {sup 62}Ni target and a long irradiation period at high neutron flux. Trace impurities in the nickel and associated target materials are also activated and account for a significant fraction of the discharged activity and essentially all of the gamma activity. While most of these undesirable activation products can be removed as chloride complexes during anion exchange, chromium, present at {sup 51}Cr, and scandium, present as {sup 46}Sc, are exceptions and require additional processing to achieve the desired purity. Optimized flowsheets are discussed based upon the current development and production experience.

  17. Recovery and purification of nickel-63 from HFIR-irradiated targets

    Energy Technology Data Exchange (ETDEWEB)

    Williams, D.F.; O' Kelley, G.D.; Knauer, J.B.; Porter, C.E.; Wiggins, J.T.

    1993-06-01

    The production of large quantities of high-specific-activity [sup 63]Ni (>10 Ci/g) requires both a highly enriched [sup 62]Ni target and a long irradiation period at high neutron flux. Trace impurities in the nickel and associated target materials are also activated and account for a significant fraction of the discharged activity and essentially all of the gamma activity. While most of these undesirable activation products can be removed as chloride complexes during anion exchange, chromium, present at [sup 51]Cr, and scandium, present as [sup 46]Sc, are exceptions and require additional processing to achieve the desired purity. Optimized flowsheets are discussed based upon the current development and production experience.

  18. Cyclotron Produced 44gSc from Natural Calcium

    Science.gov (United States)

    Severin, G.W.; Engle, J.W.; Valdovinos, H.F.; Barnhart, T.E.; Nickles, R.J.

    2012-01-01

    44gSc was produced by 16 MeV proton irradiation of unenriched calcium metal with radionuclidic purity greater than 95%. The thick target yield at saturation for 44gSc was 213 MBq/μA, dwarfing the yields of contaminants 43Sc,44mSc, 47Sc and 48Sc for practical bombardment times of 1–2 h. Scandium was isolated from the dissolved calcium target by filtration, and reconstituted in small volumes of dilute HCl. Reactions with the chelate 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA) indicated a reactivity of 54±14 Gbq/μmol at end-of-bombardment. PMID:22728844

  19. Non-noble metal based electro-catalyst compositions for proton exchange membrane based water electrolysis and methods of making

    Science.gov (United States)

    Kumta, Prashant N.; Kadakia, Karan Sandeep; Datta, Moni Kanchan; Velikokhatnyi, Oleg

    2017-02-07

    The invention provides electro-catalyst compositions for an anode electrode of a proton exchange membrane-based water electrolysis system. The compositions include a noble metal component selected from the group consisting of iridium oxide, ruthenium oxide, rhenium oxide and mixtures thereof, and a non-noble metal component selected from the group consisting of tantalum oxide, tin oxide, niobium oxide, titanium oxide, tungsten oxide, molybdenum oxide, yttrium oxide, scandium oxide, cooper oxide, zirconium oxide, nickel oxide and mixtures thereof. Further, the non-noble metal component can include a dopant. The dopant can be at least one element selected from Groups III, V, VI and VII of the Periodic Table. The compositions can be prepared using a surfactant approach or a sol gel approach. Further, the compositions are prepared using noble metal and non-noble metal precursors. Furthermore, a thin film containing the compositions can be deposited onto a substrate to form the anode electrode.

  20. Protection Against Neutron Radiation Up to 30 Million Electron Volts

    Science.gov (United States)

    1957-11-22

    5.6 Scandium 22 Selenium 1n L Silicon 0.l 1,;o Silver f;0 .2, 2.9Sodium 0.1 4.1 ɚ Strontium . 16,* Sulfur 0..1 1Tantalum . .1.3 Thallium 3.3 6.; Tin...8217ses of A tomjic Enervy. p). .35-44 (Genteva, 1955). 151I William T. Ham. .Jr.. Radiation cataract . .AMA Arch. Ophth. 50. 618-643 (195:0). I 61 P. H...Abelson and P. G. Kruger., (’ylotc-on-intlnc-d radiation cataracts . Science 10. 6551 ( 1919). 171 NBS Tech. News Pill. 11. 17 ( 19-57); Radi: I\\ ;s.r68

  1. Terbium Radionuclides for Theranostics Applications: A Focus On MEDICIS-PROMED

    Science.gov (United States)

    Cavaier, R. Formento; Haddad, F.; Sounalet, T.; Stora, T.; Zahi, I.

    A new facility, named CERN-MEDICIS, is under construction at CERN to produce radionuclides for medical applications. In parallel, the MEDICIS-PROMED, a Marie Sklodowska-Curie innovative training network of the Horizon 2020 European Commission's program, is being coordinated by CERN to train young scientists on the production and use of innovative radionuclides and develop a network of experts within Europe. One program within MEDICIS-PROMED is to determine the feasibility of producing innovative radioisotopes for theranostics using a commercial middle-sized high-current cyclotron and the mass separation technology developed at CERN-MEDICIS. This will allow the production of high specific activity radioisotopes not achievable with the common post-processing by chemical separation. Radioisotopes of scandium, copper, arsenic and terbium have been identified. Preliminary studies of activation yield and irradiation parameters optimization for the production of Tb-149 will be described.

  2. Massive stars. A chemical signature of first-generation very massive stars.

    Science.gov (United States)

    Aoki, W; Tominaga, N; Beers, T C; Honda, S; Lee, Y S

    2014-08-22

    Numerical simulations of structure formation in the early universe predict the formation of some fraction of stars with several hundred solar masses. No clear evidence of supernovae from such very massive stars has, however, yet been found in the chemical compositions of Milky Way stars. We report on an analysis of a very metal-poor star SDSS J001820.5-093939.2, which possesses elemental-abundance ratios that differ significantly from any previously known star. This star exhibits low [α-element Fe] ratios and large contrasts between the abundances of odd and even element pairs, such as scandium/titanium and cobalt/nickel. Such features have been predicted by nucleosynthesis models for supernovae of stars more than 140 times as massive as the Sun, suggesting that the mass distribution of first-generation stars might extend to 100 solar masses or larger. Copyright © 2014, American Association for the Advancement of Science.

  3. Development of Cr,Nd:GSGG laser as a pumping source of Ti:sapphire laser

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Koji [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Arisawa, Takashi

    1999-08-01

    Since efficiency of Cr,Nd doped gadolinium scandium gallium garnet (GSGG) laser is in principle higher than that of Nd:YAG laser, it can be a highly efficient pumping source for Ti:sapphire laser. We have made GSGG laser, and measured its oscillation properties. It was two times more efficient than Nd:YAG laser at free running mode operation. At Q-switched mode operation, fundamental output of 50 mJ and second harmonics output of 8 mJ were obtained. The developed laser had appropriate spatial profile, temporal duration, long time stability for solid laser pumping. Ti:sapphire laser oscillation was achieved by the second harmonics of GSGG laser. (author)

  4. Mechanical property evaluations of an amorphous metallic/ceramic multilayer and its role in improving fatigue properties of 316L stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Cheng-Min [Nano Technology Center, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Jeng, R.J.; Yu, Chia-Chi; Chang, Chia-Hao [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Li, Chia-Lin [Department of Materials Science and Engineering and Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chu, Jinn P., E-mail: jpchu@mail.ntust.edu.tw [Nano Technology Center, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2016-08-01

    We have used nanoindentation to investigate mechanical properties of 200-nm-thick amorphous multilayer consisting of alternating layers of Zr-based thin film metallic glass (TFMG) and holmium scandium oxide (HSO). Nanoindentation results show that TFMG/HSO multilayer exhibits the high hardness and Young's modulus. Owing to its high hardness, smooth surface, and good adhesion properties, TFMG/HSO multilayer is then employed as a protective coating to improve the four-point bending fatigue properties of 316L stainless steel. With coating, the fatigue life is increased from 2.4×10{sup 5} to 4.9×10{sup 6} cycles, at the stress of 700 MPa. A crack retardation mechanism has been proposed to explain the role of TFMG/HSO multilayer in improving fatigue properties of 316L stainless steel substrate.

  5. Clinical, morphological, and ultrastructural aspects with the use of Er:YAG and Er,Cr:YSGG lasers in restorative dentistry.

    Science.gov (United States)

    Iaria, Giuseppe

    2008-01-01

    The Er:YAG laser has an active medium of Yttrium-Aluminium-Garnet doped with Erbium ions and emits free-running pulsed laser energy at a wavelength of 2940 nm. The Er,Cr:YSGG laser has an active medium of Yttrium-Scandium-Gallium-Garnet doped with Erbium and Chromium ions and emits free-running pulsed laser energy at a wavelength of 2780 nm. These wavelengths have a high absorption in water, which makes their application appropriate for ablating oral soft tissue as well as dental hard tissue. This article examines the principles of use for the Er:YAG and Er,Cr:YSGG lasers in clinical restorative dentistry and reviews the literature regarding different aspects of the use of laser energy on hard tissues.

  6. The high-temperature modification of ScRuSi - Structure, 29Si and 45Sc solid state NMR spectroscopy

    Science.gov (United States)

    Hoffmann, Rolf-Dieter; Rodewald, Ute Ch.; Haverkamp, Sandra; Benndorf, Christopher; Eckert, Hellmut; Heying, Birgit; Pöttgen, Rainer

    2017-10-01

    A polycrystalline sample of the TiNiSi type low-temperature (LT) modification of ScRuSi was synthesized by arc-melting. Longer annealing in a sealed silica tube (6 weeks at 1270 K) followed by quenching led to the high-temperature (HT) phase. HT-ScRuSi adopts the ZrNiAl structure type: P 6 bar 2 m , a = 688.27(9), c = 336.72(5) pm, wR2 = 0.0861, 260 F2 values, 14 variables. The striking structural building units are regular, tricapped trigonal prisms Si1@Ru3Sc6 and Si2@Ru6Sc3. Both polymorphs have been characterized by 29Si and 45Sc MAS-NMR spectroscopy. The local scandium environments in the two polymorphs are easily distinguished by their electric field gradient tensor values, in agreement with theoretically calculated values.

  7. Undercooling of Rapidly Solidified Droplets and Spray Formed Strips of Al-Cu (Sc)

    Science.gov (United States)

    Bogno, A.; Natzke, P.; Yin, S.; Henein, H.

    Impulse Atomization (IA) (a single fluid atomization technique) was used to rapidly solidify Al-4.5wt%Cu and Al-4.5wt%Cu-0.4wt%Sc under argon atmosphere. In addition to the IA-generated droplets, the same technique was used to produce strips by Spray Deposition (SD) of the same alloys on a copper substrate with and without oil coating. The rapid solidification microstructures were analyzed using Scanning Electron Microscopy (SEM). From the SEM images, the amount of eutectic and the secondary dendrite arm spacing (SDAS) were measured. These SDAS results lead to the estimation of cooling rate. The eutectic fraction coupled with the metastable extension of the solidus and liquidus lines of Al-Cu (Sc) phase diagram lead to the estimation of primary and eutectic undercoolings. A comparison of the solidification path of the droplets and the strips was done as well as the analysis of the effects of scandium.

  8. Advancing Chemistry with the Lanthanide and Actinide Elements: Final Report, September 2013

    Energy Technology Data Exchange (ETDEWEB)

    Evans, William John [Univ. of California, Irvine, CA (United States). Dept. of Chemistry

    2013-09-11

    The objective of this research is to use the unique chemistry available from complexes of the lanthanides and actinides, as well as related heavy metals such as scandium, yttrium, and bismuth to advance chemistry in energy-related areas. The lanthanides and actinides have a combination of properties in terms of size, charge, electropositive character, and f valence orbitals that provides special opportunities to probe reactivity and catalysis in ways not possible with the other metals in the periodic table. We seek to discover reaction pathways and structural types that reveal new options in reaction chemistry related to energy. Identification of new paradigms in structure and reactivity should stimulate efforts to develop new types of catalytic processes that at present are not under consideration because either the transformation or the necessary intermediates are unknown.

  9. Technologic advances in endodontics.

    Science.gov (United States)

    Mortman, Rory E

    2011-07-01

    This article addresses technologic advances in endodontics pertaining to new and emerging technology. Cone-beam computed tomography and optical occurrence tomography are 2 new imaging technologies that can assist the practitioner in the diagnosis of pulpal disease. The self-adjusting file and the Apexum device can be used for instrumentation and bulk debridement of an apical lesion, respectively. Neodymium:yttrium-aluminum-garnet laser, erbium:chromium:yttrium-scandium-gallium-garnet laser, EndoActivator, EndoVac, and light-activated disinfection may assist the practitioner in cleaning the root canal system. Computed tomography-guided surgery shows promise in making endodontic surgery easier, as does mineral trioxide aggregate cement for regenerative endodontic procedures. Copyright © 2011 Elsevier Inc. All rights reserved.

  10. Microstructure and high temperature stability of age hardenable AA2219 aluminium alloy modified by Sc, Mg and Zr additions

    Energy Technology Data Exchange (ETDEWEB)

    Naga Raju, P. [Metallurgical and Materials Engineering Department, IIT-Madras, Chennai 600036 (India)], E-mail: puvvala_nagaraju@yahoo.com; Srinivasa Rao, K. [Metallurgical Engineering Department, Andhra University, Visakapatnam 530003 (India); Reddy, G.M. [Defence Metallurgical Research Laboratory, Hyderabad 500258 (India); Kamaraj, M.; Prasad Rao, K. [Metallurgical and Materials Engineering Department, IIT-Madras, Chennai 600036 (India)

    2007-08-25

    The present work pertains to the improvement of high temperature stability of age hardenable AA2219 aluminium-copper (6.3%) alloy. Addition of scandium, magnesium and zirconium to the base metal AA2219 was adopted to improve this high temperature stability. These additions were systematically varied by preparing alloys of different composition using gas tungsten arc melting. Long time ageing studies and impression creep technique were used to study the high temperature stability of the alloys. These modified compositions of the alloy resulted in fine equiaxed grains, refined eutectics, large number of high temperature stable and finer precipitates. Among all the compositions, 0.8% Sc + 0.45% Mg + 0.2% Zr addition was found to be significant in improving the high temperature stability of AA2219 alloy. This may be attributed to the possible microstructural changes, solute enrichment of the matrix and pinning of the grain boundaries by the finer precipitates.

  11. Sustainability of rare earth elements chain: from production to food - a review.

    Science.gov (United States)

    Turra, Christian

    2017-12-15

    Rare earth elements (REE) are a group of chemical elements that include lanthanoids (lanthanum to lutetium), scandium and yttrium. In the last decades, the REE demand in the industry and other areas has increased significantly. In general, REE have shown low concentrations in soils, plants, water and atmosphere, but they may accumulate in such environments due to anthropogenic inputs. In areas where there is REE contamination, the slow accumulation of these elements in the environment could become problematic. Many studies have shown environmental areas contaminated with REE and their toxic effects. Thus, it is important to review, in order to improve the current understanding of these elements in the environment, showing the effects of REE exposure in mining, soil, water, plants and food. Besides, there are few suppliers and a limited quantity of these elements in the world. This paper suggests options to improve the sustainability management of REE chain.

  12. New electron spin resonance and mass spectrometric studies of metallofullerenes

    Science.gov (United States)

    Bartl, A.; Dunsch, L.; Froehner, J.; Kirbach, U.

    1994-10-01

    The preparation by arc vaporization of graphite rods of metal-containing fullerene samples with metals inside the fullerene molecules is described. The metals lanthanum, scandium, holmium and yttrium were used for this study. Results in mass spectrometry confirm the existence and stability of several Me at C82 species. Electron spin resonance (ESR) spectroscopic measurements of metallofullerene samples in the solid state and in tetrachloroethane solution favor the existence of endohedral systems. The splitting of the ESR spectra is interpreted by isotropic hyperfine coupling of an unpaired electron with the nuclear magnetic moment of a metal ion inside a fullerene molecule. It is concluded that the metal atoms exist in ionic form in endohedral fullerenes both in solid and liquid state of the fullerene. Furthermore it is shown that there is more than one stable position of the metal ion inside the fullerene molecule.

  13. Analysis of inorganic and organic constituents of myrrh resin by GC–MS and ICP-MS: An emphasis on medicinal assets

    Directory of Open Access Journals (Sweden)

    Syed Rizwan Ahamad

    2017-07-01

    Full Text Available The aim of the present investigation was to explore the constituents of the Arabian myrrh resin obtained from Commiphora myrrha. The organic and inorganic composition of the myrrh gum resin has been investigated using gas chromatography-mass spectrometry (GC–MS and inductively coupled plasma-mass spectrometry (ICP-MS. Analysis executed by ICP-MS reveals the presence of various inorganic elements in significant amount in the myrrh resin. The elements that were found to be present in large amounts include calcium, magnesium, aluminum, phosphorus, chlorine, chromium, bromine and scandium. The important organic constituents identified in the myrrh ethanolic extract include limonene, curzerene, germacrene B, isocericenine, myrcenol, beta selinene, and spathulenol,. The present work complements other myrrh associated investigations done in the past and provides additional data for the future researches.

  14. The coloring problem in the solid-state metal boride carbide ScB{sub 2}C{sub 2}. A theoretical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Lassoued, Souheila [Universite de Rennes, Ecole Nationale Superieure de Chimie, UMR 6226 CNRS (France). Inst. des Sciences Chimiques; Universite Kasdi Merbah-Ouargla (Algeria). Faculte des Mathematiques et des Sciences de la Matiere; Boucher, Benoit [Universite de Rennes, Ecole Nationale Superieure de Chimie, UMR 6226 CNRS (France). Inst. des Sciences Chimiques; Max-Planck-Institut fuer Chemische Physik Fester Stoffe, Dresden (Germany); Boutarfaia, Ahmed [Universite Kasdi Merbah-Ouargla (Algeria). Faculte des Mathematiques et des Sciences de la Matiere; Gautier, Regis; Halet, Jean-Francois [Universite de Rennes, Ecole Nationale Superieure de Chimie, UMR 6226 CNRS (France). Inst. des Sciences Chimiques

    2016-08-01

    The electronic properties of the layered ternary metal boride carbide ScB{sub 2}C{sub 2}, the structure of which consists of B/C layers made of fused five- and seven-membered rings alternating with scandium sheets, are analyzed. In particular, the respective positions of the B and C atoms (the so-called coloring problem) are tackled using density functional theory, quantum theory of atoms in molecules, and electron localizability indicator calculations. Results reveal that (i) the most stable coloring minimizes the number of B-B and C-C contacts and maximizes the number of boron atoms in the heptagons, (ii) the compound is metallic in character, and (iii) rather important covalent bonding occurs between the metallic sheets and the boron-carbon network.

  15. Density functional study of AgScO_2: Electronic and optical properties

    Science.gov (United States)

    Bhamu, K. C.; Sahariya, Jagrati; Vyas, Rishi; Priolkar, K. R.

    2017-07-01

    This paper focusses on the electronic and optical properties of scandium-based silver delafossite (AgScO_2) semiconductor. The density functional theory (DFT) in the framework of full potential linearized augmented plane wave (FP-LAPW) scheme has been used for the present calculations with local density approximation (LDA) and generalized gradient approximation (GGA). Electronic properties deal with energy bands and density of states (DOSs), while optical properties describe refractive index and absorption coefficient. The energy bands are interpreted in terms of DOSs. The computed value of band gap is in agreement with that reported in the literature. Our results predict AgScO_2 as indirect band-gap semiconductor. Our calculated value of the refractive index in zero frequency limits is 2.42. The absorption coefficient predicts the applicability of AgScO_2 in solar cells and flat panel liquid crystal display as a transparent top window layer.

  16. Oxidation of zirconium alloys in 2.5 kPa water vapor for tritium readiness.

    Energy Technology Data Exchange (ETDEWEB)

    Mills, Bernice E.

    2007-11-01

    A more reactive liner material is needed for use as liner and cruciform material in tritium producing burnable absorber rods (TPBAR) in commercial light water nuclear reactors (CLWR). The function of these components is to convert any water that is released from the Li-6 enriched lithium aluminate breeder material to oxide and hydrogen that can be gettered, thus minimizing the permeation of tritium into the reactor coolant. Fourteen zirconium alloys were exposed to 2.5 kPa water vapor in a helium stream at 300 C over a period of up to 35 days. Experimental alloys with aluminum, yttrium, vanadium, titanium, and scandium, some of which also included ternaries with nickel, were included along with a high nitrogen impurity alloy and the commercial alloy Zircaloy-2. They displayed a reactivity range of almost 500, with Zircaloy-2 being the least reactive.

  17. Laser systems for ablative fractional resurfacing

    DEFF Research Database (Denmark)

    Paasch, Uwe; Haedersdal, Merete

    2011-01-01

    Ablative fractional resurfacing (AFR) creates microscopic vertical ablated channels that are surrounded by a thin layer of coagulated tissue, constituting the microscopic treatment zones (MTZs). AFR induces epidermal and dermal remodeling, which raises new possibilities for the treatment of a var......Ablative fractional resurfacing (AFR) creates microscopic vertical ablated channels that are surrounded by a thin layer of coagulated tissue, constituting the microscopic treatment zones (MTZs). AFR induces epidermal and dermal remodeling, which raises new possibilities for the treatment...... ablative laser systems. Fractionated CO(2) (10,600-nm), erbium yttrium aluminum garnet, 2940-nm and yttrium scandium gallium garnet, 2790-nm lasers are available. In this article, we present an overview of AFR technology, devices and histopathology, and we summarize the current clinical possibilities...

  18. Historical economic and environmental policies influencing trace metal inputs in Montevideo Bay, Río de la Plata.

    Science.gov (United States)

    Bueno, C; Brugnoli, E; Figueira, R C L; Muniz, P; Ferreira, P A L; García Rodríguez, F

    2016-12-15

    Montevideo Bay is located in the middle zone of the Rio de la Plata, and since the foundation of the city, several key economic and environmental policies affected the industry, and thus, metal inputs into this ecosystem. The aim of this study is to evaluate the sedimentary geochemical record of Montevideo Bay, in order to determine the historical inputs of anthropogenic metals to the system. In addition, environmental and economic policies of the country were taken into account to infer the relationship between them and the historic metal input. Concentrations of aluminum, chromium, copper, lead, scandium and zinc were analyzed and the EF and SPI indices were calculated. The analysis showed that since Montevideo foundation, metal concentrations increased in accordance with industry development, and the indices as well as the metal concentration represent a reliable footprint of the history of different economic and environmental policies influencing historical industrial activities. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. Precipitation Reactions in Age-Hardenable Alloys During Laser Additive Manufacturing

    Science.gov (United States)

    Jägle, Eric A.; Sheng, Zhendong; Wu, Liang; Lu, Lin; Risse, Jeroen; Weisheit, Andreas; Raabe, Dierk

    2016-03-01

    We describe and study the thermal profiles experienced by various age-hardenable alloys during laser additive manufacturing (LAM), employing two different manufacturing techniques: selective laser melting and laser metal deposition. Using scanning electron microscopy and atom probe tomography, we reveal at which stages during the manufacturing process desired and undesired precipitation reactions can occur in age-hardenable alloys. Using examples from a maraging steel, a nickel-base superalloy and a scandium-containing aluminium alloy, we demonstrate that precipitation can already occur during the production of the powders used as starting material, during the deposition of material (i.e. during solidification and subsequent cooling), during the intrinsic heat treatment effected by LAM (i.e. in the heat affected zones) and, naturally, during an ageing post-heat treatment. These examples demonstrate the importance of understanding and controlling the thermal profile during the entire additive manufacturing cycle of age-hardenable materials including powder synthesis.

  20. Determination of metallic impurities in raw materials for radioisotope production by atomic absorption spectroscopy; Determinacion de trazas metalicas en amterias primas para la produccion de radioisotopos por espectroscopia de absorcion atomica

    Energy Technology Data Exchange (ETDEWEB)

    Roca, M.; Alvarez, F.; Capdevila, C.

    1969-07-01

    Atomic absorption spectrometry has been used for the determination of traces of calcium in scandium oxide, copper in zinc, iron in cobalt oxide, manganese In ferric oxide, nickel in copper and zinc in gallium oxide. The influences on the sensitivities arising from the hollow cathode currents, the gas pressures and the acid concentrations have been considered. A study of the interferences from the metallic matrices has also been performed, the interference due to the absorption of the manganese radiation by the atoms of iron being the most outstanding . In order to remove the interfering elements and increase sensitivity, pre-concentration methods have been tested. The addition methods has also been used. (Author) 14 refs.