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Sample records for sapphire zinc selenide

  1. Extinction in an extended-face crystal of zinc selenide

    International Nuclear Information System (INIS)

    Stevenson, A.W.; Barnea, Z.

    1982-01-01

    X-ray intensity measurements from an extended-face single crystal of cubic zinc selenide obtained by McIntyre, Moss and Barnea (1980) have been re-analysed with a view to explaining the unresolved discrepancies between theory and experiment present in the original analysis of the most severely extinguished reflections. The results are shown to complement the recent findings of a wavelength dependent study using the same crystal specimen and foreshadow the need to allow for the presence of the Borrmann effect

  2. From zinc selenate to zinc selenide nano structures synthesized by reduction process

    International Nuclear Information System (INIS)

    Hutagalung, S.D.; Eng, S.T.; Ahmad, Z.A.; Ishak Mat; Yussof Wahab

    2009-01-01

    One-dimensional nano structure materials are very attractive because of their electronic and optical properties depending on their size. It is well known that properties of material can be tuned by reducing size to nano scale because at the small sizes, that they behave differently with its bulk materials and the band gap will control by the size. The tunability of the band gap makes nano structured materials useful for many applications. As one of the wide band gaps semiconductor compounds, zinc selenide (ZnSe) nano structures (nanoparticles, nano wires, nano rods) have received much attention for the application in optoelectronic devices, such as blue laser diode, light emitting diodes, solar cells and IR optical windows. In this study, ZnSe nano structures have been synthesized by reduction process of zinc selenate using hydrazine hydrate (N 2 H 4 .2H 2 O). The reductive agent of hydrazine hydrate was added to the starting materials of zinc selenate were heat treated at 500 degree Celsius for 1 hour under argon flow to form one-dimensional nano structures. The SEM and TEM images show the formation of nano composite-like structure, which some small nano bar and nano pellets stick to the rod. The x-ray diffraction and elemental composition analysis confirm the formation of mixture zinc oxide and zinc selenide phases. (author)

  3. PROPERTIES AND OPTICAL APPLICATION OF POLYCRYSTALLINE ZINC SELENIDE OBTAINED BY PHYSICAL VAPOR DEPOSITION

    Directory of Open Access Journals (Sweden)

    A. A. Dunaev

    2015-05-01

    Full Text Available Findings on production technology, mechanical and optical properties of polycrystalline zinc selenide are presented. The combination of its physicochemical properties provides wide application of ZnSe in IR optics. Production technology is based on the method of physical vapor deposition on a heated substrate (Physical Vapor Deposition - PVD. The structural features and heterogeneity of elemental composition for the growth surfaces of ZnSe polycrystalline blanks were investigated using CAMEBAX X-ray micro-analyzer. Characteristic pyramid-shaped crystallites were recorded for all growth surfaces. The measurements of the ratio for major elements concentrations show their compliance with the stoichiometry of the ZnSe compounds. Birefringence, optical homogeneity, thermal conductivity, mechanical and optical properties were measured. It is established that regardless of polycrystalline condensate columnar and texturing, the optical material is photomechanically isotropic and homogeneous. The actual performance of parts made of polycrystalline optical zinc selenide in the thermal spectral ranges from 3 to 5 μm and from 8 to 14 μm and in the CO2 laser processing plants with a power density of 500 W/cm2 is shown. The developed technology gives the possibility to produce polycrystalline optical material on an industrial scale.

  4. Low-energy electron energy losses and inelastic mean free paths in zinc, selenium, and zinc selenide

    Energy Technology Data Exchange (ETDEWEB)

    Bourke, J.D.; Chantler, C.T., E-mail: chantler@unimelb.edu.au

    2014-10-15

    We compute low-energy optical energy loss spectra for the elemental solids zinc and selenium, and for the binary compound zinc selenide. The optical data are transformed via a constrained partial-pole algorithm to produce momentum-dependent electron energy loss spectra and electron inelastic mean free paths. This enables a comparison between the electron scattering behaviour in a compound solid and its constituent elements. Results cannot be explained by aggregation methods or commonly used universal curves, and prove that new approaches are required. Our work demonstrates new capabilities for the determination of fundamental material properties for a range of structures previously inaccessible to established theoretical models, and at energy levels inaccessible to most experimental techniques.

  5. Low-energy electron energy losses and inelastic mean free paths in zinc, selenium, and zinc selenide

    International Nuclear Information System (INIS)

    Bourke, J.D.; Chantler, C.T.

    2014-01-01

    We compute low-energy optical energy loss spectra for the elemental solids zinc and selenium, and for the binary compound zinc selenide. The optical data are transformed via a constrained partial-pole algorithm to produce momentum-dependent electron energy loss spectra and electron inelastic mean free paths. This enables a comparison between the electron scattering behaviour in a compound solid and its constituent elements. Results cannot be explained by aggregation methods or commonly used universal curves, and prove that new approaches are required. Our work demonstrates new capabilities for the determination of fundamental material properties for a range of structures previously inaccessible to established theoretical models, and at energy levels inaccessible to most experimental techniques

  6. Organic molecules passivated Mn doped Zinc Selenide quantum dots and its properties

    International Nuclear Information System (INIS)

    Archana, J.; Navaneethan, M.; Ponnusamy, S.; Hayakawa, Y.; Muthamizhchelvan, C.

    2011-01-01

    Quantum dots of Mn doped Zinc Selenide with N-Methylaniline as the capping agent was prepared by simple and inexpensive wet chemical method. Size of the particles observed by TEM was of the order of 2-4 nm which was well consistent with the size measured by UV analysis. The presence of paramagnetic substance Mn 2+ in the ZnSe quantum dots was confirmed by EPR measurement. Mn doped ZnSe nanoparticles exhibited a strong blue emission that was strongly dependent upon the Mn dopant level and the surface passivation produced by N-Methylaniline. The stability of the product was studied by thermal analysis which shows that this product is highly suitable for opto-electronic applications.

  7. Solar Light Responsive Photocatalytic Activity of Reduced Graphene Oxide-Zinc Selenide Nanocomposite

    Science.gov (United States)

    Chakraborty, Koushik; Ibrahim, Sk; Das, Poulomi; Ghosh, Surajit; Pal, Tanusri

    2017-10-01

    Solution processable reduced graphene oxide-zinc selenide (RGO-ZnSe) nanocomposite has been successfully synthesized by an easy one-pot single-step solvothermal reaction. The RGO-ZnSe composite was characterized structurally and morphologically by the study of XRD analysis, SEM and TEM imaging. Reduction in graphene oxide was confirmed by FTIR spectroscopy analysis. Photocatalytic efficiency of RGO-ZnSe composite was investigated toward the degradation of Rhodamine B under solar light irradiation. Our study indicates that the RGO-ZnSe composite is catalytically more active compared to the controlled-ZnSe under the solar light illumination. Here, RGO plays an important role for photoinduced charge separation and subsequently hinders the electron-hole recombination probability that consequently enhances photocatalytic degradation efficiency. We expect that this type of RGO-based optoelectronics materials opens up a new avenue in the field of photocatalytic degradation of different organic water pollutants.

  8. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

    Directory of Open Access Journals (Sweden)

    V. Naval

    2010-01-01

    Full Text Available Wide-bandgap semiconductors such as zinc selenide (ZnSe have become popular for ultraviolet (UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm and UV-B (280–320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

  9. Design and fabrication of anti-reflection coating on Gallium Phosphide, Zinc Selenide and Zinc Sulfide substrates for visible and infrared application

    Directory of Open Access Journals (Sweden)

    Mokrý P.

    2013-05-01

    Full Text Available Results of design and fabrication of a dual-band anti-reflection coating on a gallium phosphide (GaP, zinc selenide (ZnSe and zinc sulfide (ZnS substrates are presented. A multilayer stack structure of antireflection coatings made of zinc sulfide and yttrium fluoride (YF3 was theoretically designed for optical bands between 0.8 and 0.9 μm and between 9.5 and 10.5 μm. This stack was designed as efficient for these materials (GaP, ZnS, ZnSe together. Multilayer stack structure was deposited using thermal evaporation method. Theoretically predicted transmittance spectra were compared with transmitted spectra measured on coated substrates. Efficiency of anti-reflection coating is estimated and discrepancies are analyzed and discussed.

  10. Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

    International Nuclear Information System (INIS)

    Kundu, Sambhu; Olsen, Larry C.

    2005-01-01

    Cadmium-free copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm 2 ) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance

  11. Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

    International Nuclear Information System (INIS)

    Wessels, B.W.

    1980-01-01

    In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

  12. Zinc sulfide and zinc selenide immersion gratings for astronomical high-resolution spectroscopy: evaluation of internal attenuation of bulk materials in the short near-infrared region

    Science.gov (United States)

    Ikeda, Yuji; Kobayashi, Naoto; Kondo, Sohei; Yasui, Chikako; Kuzmenko, Paul J.; Tokoro, Hitoshi; Terada, Hiroshi

    2009-08-01

    We measure the internal attenuation of bulk crystals of chemical vapor deposition zinc selenide (CVD-ZnS), chemical vapor deposition zinc sulfide (CVD-ZnSe), Si, and GaAs in the short near-infrared (sNIR) region to evaluate the possibility of astronomical immersion gratings with those high refractive index materials. We confirm that multispectral grade CVD-ZnS and CVD-ZnSe are best suited for the immersion gratings, with the smallest internal attenuation of αatt=0.01 to 0.03 cm-1 among the major candidates. The measured attenuation is roughly in proportion to λ-2, suggesting it is dominated by bulk scattering due to the polycrystalline grains rather than by absorption. The total transmittance in the immersion grating is estimated to be at least >80%, even for the spectral resolution of R=300,000. Two potential problems, the scattered light by the bulk material and the degradation of the spectral resolution due to the gradient illumination in the diffracted beam, are investigated and found to be negligible for usual astronomical applications. Since the remaining problem, the difficulty of cutting grooves on CVD-ZnS and CVD-ZnSe, has recently been overcome by the nanoprecision fly-cutting technique, ZnS and ZnSe immersion gratings for astronomy can be technically realized.

  13. Enhanced phosphorescence and electroluminescence in triplet emitters by doping gold into cadmium selenide/zinc sulfide nanoparticles

    International Nuclear Information System (INIS)

    Liu, H.-W.; Laskar, Inamur R.; Huang, C.-P.; Cheng, J.-A.; Cheng, S.-S.; Luo, L.-Y.; Wang, H.-R.; Chen, T.-M.

    2005-01-01

    Gold-cadmium selenide/zinc sulfide (Au-CdSe/ZnS) nanocomposites (NCs) were synthesized and characterized by transmission electron microscopy (TEM), energy dispersive X-ray (EDX) analysis, ultraviolet-visible (UV-visible) absorption and photoluminescence (PL) emission spectroscopy. The PL intensity in the Au-CdSe/ZnS NCs system was found to be much greater than that of CdSe/ZnS nanoparticles (NPs) alone, because of the surface-enhanced Raman scattering of Au NPs. Adding Au-CdSe/ZnS NCs to the cyclometalated iridium(III) complex (Ir-complex) greatly enhanced the PL intensity of a triplet emitter. Three double-layered electroluminescence (EL) devices were fabricated where the emitting zone contains the definite mixture of Ir-complex and the NCs [molar concentration of Ir-complex/NCs = 1:0 (Blank, D-1), 1:1 (D-2) and 1:3 (D-3)] and the device D-2 exhibited optimal EL performances

  14. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    Science.gov (United States)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  15. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

    International Nuclear Information System (INIS)

    Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

    2008-01-01

    High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

  16. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  17. Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

    Science.gov (United States)

    Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

    2017-08-01

    A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

  18. Thermodynamic properties of selenoether-functionalized ionic liquids and their use for the synthesis of zinc selenide nanoparticles.

    Science.gov (United States)

    Klauke, Karsten; Zaitsau, Dzmitry H; Bülow, Mark; He, Li; Klopotowski, Maximilian; Knedel, Tim-Oliver; Barthel, Juri; Held, Christoph; Verevkin, Sergey P; Janiak, Christoph

    2018-04-03

    Three selenoether-functionalized ionic liquids (ILs) of N-[(phenylseleno)methylene]pyridinium (1), N-(methyl)- (2) and N-(butyl)-N'-[(phenylseleno)methylene]imidazolium (3) with bis(trifluoromethanesulfonyl)imide anions ([NTf2]) were prepared from pyridine, N-methylimidazole and N-butylimidazole with in situ obtained phenylselenomethyl chloride, followed by ion exchange to give the desired compounds. The crystal structures of the bromide and tetraphenylborate salts of the above cations (1-Br, 2-BPh4 and 3-BPh4) confirm the formation of the desired cations and indicate a multitude of different supramolecular interactions besides the dominating Coulomb interactions between the cations and anions. The vaporization enthalpies of the synthesized [NTf2]-containing ILs were determined by means of a quartz-crystal microbalance method (QCM) and their densities were measured with an oscillating U-tube. These thermodynamic data have been used to develop a method for assessment of miscibility of conventional solvents in the selenium-containing ILs by using Hildebrandt solubility parameters, as well as for modeling with the electrolyte perturbed-chain statistical associating fluid theory (ePC-SAFT) method. Furthermore, structure-property relations between selenoether-functionalized and similarly shaped corresponding aryl-substituted imidazolium- and pyridinium-based ILs were analyzed and showed that the contribution of the selenium moiety to the enthalpy of vaporization of an IL is equal to the contribution of a methylene (CH2) group. An incremental approach to predict vaporization enthalpies of ILs by a group contribution method has been developed. The reaction of these ILs with zinc acetate dihydrate under microwave irradiation led to ZnSe nanoparticles of an average diameter between 4 and 10 nm, depending on the reaction conditions.

  19. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  20. Zinc-enriched boutons in rat spinal cord

    DEFF Research Database (Denmark)

    Schrøder, H D; Danscher, G; Jo, S M

    2000-01-01

    The rat spinal cord reveals a complex pattern of zinc-enriched (ZEN) boutons. As a result of in vivo exposure to selenide ions, nanosized clusters of zinc selenide are created in places where zinc ions are present, including the zinc-containing synaptic vesicles of ZEN boutons. The clusters can...

  1. Zinc

    Science.gov (United States)

    ... Consumer Datos en español Health Professional Other Resources Zinc Fact Sheet for Consumers Have a question? Ask ... find out more about zinc? Disclaimer What is zinc and what does it do? Zinc is a ...

  2. Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

    International Nuclear Information System (INIS)

    Lin, Yen-Ting; Chung, Ping-Han; Lai, Hung-Wei; Su, Hsin-Lun; Lyu, Dong-Yuan; Yen, Kuo-Yi; Lin, Tai-Yuan; Kung, Chung-Yuan; Gong, Jyh-Rong

    2009-01-01

    Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N 2 O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 deg. C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 deg. C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N 2 O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N 2 O precursors.

  3. Zinc

    Science.gov (United States)

    ... Some early research suggests that zinc supplementation increases sperm count, testosterone levels, and pregnancy rates in infertile men with low testosterone levels. Other research suggests that taking zinc can improve sperm shape in men with moderate enlargement of a ...

  4. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Science.gov (United States)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  5. Determination of cadmium selenide nonstoichiometry

    International Nuclear Information System (INIS)

    Brezhnev, V.Yu.; Kharif, Ya.L.; Kovtunenko, P.V.

    1986-01-01

    Physicochemical method of determination of cadmium selenide nonstoichiometry is developed. The method nature consists in the fact, that under definite conditions dissolved cadmium is extracted from crystals to a vapor phase and then is determined in it using the photocolorimetric method. Cadmium solubility in CdSe crystal is calculated from known CdSe mass and amount of separated cadmium. The lower boundary of determined contents constitutes 1x10 -5 % mol at sample of cadmium selenide 10 g

  6. High performance sapphire windows

    Science.gov (United States)

    Bates, Stephen C.; Liou, Larry

    1993-02-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  7. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Xu, M. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Delft University of Technology, Optics Group, Van der Waalsweg 8, 2628 CH, Delft (Netherlands); Vroon, Z. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Zuyd Hogeschool, Nieuw Eyckholt 300, 6419 DJ, Heerlen (Netherlands); Belt, R. van de [Kriya Materials BV, Urmonderbaan 22, 6167 RD, Geleen (Netherlands); Buskens, P., E-mail: pascal.buskens@tno.nl, E-mail: buskens@dwi.rwth-aachen.de [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); DWI – Leibniz Institute for Interactive Materials, Forckenbeckstrasse 50, 52056, Aachen (Germany)

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  8. Improving the efficiency of copper indium gallium (Di-selenide (CIGS solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Directory of Open Access Journals (Sweden)

    M. Burghoorn

    2014-12-01

    Full Text Available Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-selenide (CIGS solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%. No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  9. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

    NARCIS (Netherlands)

    Xu, M.; Wachters, A.J.H.; Van Deelen, J.; Mourad, M.C.D.; Buskens, P.J.P.

    2014-01-01

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the

  10. Characterization of tin selenides synthesized by high-energy milling

    Directory of Open Access Journals (Sweden)

    Marcela Achimovičová

    2011-12-01

    Full Text Available Tin selenides SnSeX (x=1,2 were synthesized from tin and selenium powder precursors by high-energy milling in the planetary ballmill Pulverisette 6 (Fritsch, Germany. The orthorhombic tin selenide SnSe and the hexagonal tin diselenide SnSe2 phases were formed after4 min and 5 min of milling, respectively. Specific surface area of both selenides increased with increasing time of mechanochemicalsynthesis. The particle size distribution analysis demonstrated that the synthesized products contain agglomerated selenide particlesconsisting of numerous idiomorphic tin selenide crystals, measuring from 2 to more than 100 nm in diameter, which were also documentedby TEM. UV-Vis spectrophotometry confirmed that tin selenide particles do not behave as quantum dots.

  11. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  12. Ti:Sapphire waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

    2007-01-01

    Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

  13. Iron-Doped Zinc Selenide: Spectroscopy and Laser Development

    Science.gov (United States)

    2014-03-27

    pulsed and CW platforms have been continuously tuned across the whole gain bandwidth of Cr:ZnSe using dispersive tuning elements [9, 13, 14]. Lasers...induced fluorescence studies of the upper state manifold of Fe:ZnSe. 3.2 Laser-Induced Fluorescence Spectroscoscopy of Fe:ZnSe A Cryo Industries of...that temperature was recorded to provide a basis for calculation of the spectral distribution of gain. The recorded spectrum was black- body

  14. Vertically aligned zinc selenide nanoribbon arrays: microstructure and field emission

    International Nuclear Information System (INIS)

    Zhao Lijuan; Pang Qi; Cai Yuan; Wang Ning; Ge Weikun; Wang Jiannong; Yang Shihe

    2007-01-01

    Uniform ZnSe precursor (ZnSe : 0.38en, en = ethylenediamine) nanoribbon arrays are grown vertically on Zn foils in ethylenediamine (en) using a solvothermal method. After the annealing treatment in N 2 , the ZnSe nanoribbon arrays can be obtained without an obvious morphology change and the crystallinity of ribbons is greatly improved. The microstructures of both individual ZnSe precursor and ZnSe nanoribbons are investigated. Field emission characteristics show that the onset field required drawing a current density of ∼0.1 μ A cm -2 from the ZnSe nanoribbons is 5.0 V μm -1 and the field enhancement factors are determined to be ∼1382

  15. Selenide isotope generator for the Galileo mission

    International Nuclear Information System (INIS)

    Goebel, C.J.; Hammel, T.E.

    1978-01-01

    A significantly improved thermoelectric generator has been developed to provide electric power for NASA's Galileo Mission in 1982. Nominal power requirements for Galileo will be about 450 watts at BOL (Beginning of Life), and this will be furnished by two Selenide Isotope Generators (SIG) each powered by a Multi Hundred Watt (MHW) radioisotopic heat source. A Ground Demonstration System (GDS) of a nominal 100 w(e) features a 3M - produced selenide ring module around a shortened MHW-dimensioned electrical heat source, newly developed axially-grooved heat pipes on a disc-shaped radiator, and other innovations which will allow a full-sized generator's weight to be held at about 90 lbs

  16. Fabrication, characterization and applications of iron selenide

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Raja Azadar, E-mail: hussainazadar@yahoo.com [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Badshah, Amin [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Lal, Bhajan [Department of Energy Systems Engineering, Sukkur Institute of Business Administration (Pakistan)

    2016-11-15

    This review article presents fabrication of FeSe by solid state reactions, solution chemistry routes, chemical vapor deposition, spray pyrolysis and chemical vapor transport. Different properties and applications such as crystal structure and phase transition, band structure, spectroscopy, superconductivity, photocatalytic activity, electrochemical sensing, and fuel cell activity of FeSe have been discussed. - Graphical abstract: Iron selenide can be synthesized by solid state reactions, chemical vapor deposition, solution chemistry routes, chemical vapor transport and spray pyrolysis. - Highlights: • Different fabrication methods of iron selenide (FeSe) have been reviewed. • Crystal structure, band structure and spectroscopy of FeSe have been discussed. • Superconducting, catalytic and fuel cell application of FeSe have been presented.

  17. Cybernetic prediction of selenide Chevreul's phases

    International Nuclear Information System (INIS)

    Kiseleva, N.N.; Savitskij, E.M.

    1981-01-01

    The method of training a computer is used to forecast the possibility for the formation of selenide Chevreul's phases of the Asub(x)Bsub(6)Sesub(8) composition (where A is any chemical element, B-Mo, Cr, W, Re). The peculiarities of applying cybernetic forecasting systems in inorganic chemistry are considered. The critical temperature of transfer into the superconducting state of some phases forecasted is estimated [ru

  18. Growth of cubic InN on r-plane sapphire

    International Nuclear Information System (INIS)

    Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

    2003-01-01

    InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

  19. Selective growth of gold onto copper indium sulfide selenide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Witt, Elena; Parisi, Juergen; Kolny-Olesiak, Joanna [Oldenburg Univ. (Germany). Inst. of Physics, Energy and Semiconductor Research

    2013-05-15

    Hybrid nanostructures are interesting materials for numerous applications in chemistry, physics, and biology, due to their novel properties and multiple functionalities. Here, we present a synthesis of metal-semiconductor hybrid nanostructures composed of nontoxic I-III-VI semiconductor nanoparticles and gold. Copper indium sulfide selenide (CuInSSe) nanocrystals with zinc blende structure and trigonal pyramidal shape, capped with dodecanethiol, serve as an original semiconductor part of a new hybrid nanostructure. Metallic gold nanocrystals selectively grow onto vertexes of these CuInSSe pyramids. The hybrid nanostructures were studied by transmission electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, and UV-Vis-absorption spectroscopy, which allowed us conclusions about their growth mechanism. Hybrid nanocrystals are generated by replacement of a sacrificial domain in the CuInSSe part. At the same time, small selenium nanocrystals form that stay attached to the remaining CuInSSe/Au particles. Additionally, we compare the synthesis and properties of CuInSSe-based hybrid nanostructures with those of copper indium disulfide (CuInS{sub 2}). CuInS{sub 2}/Au nanostructures grow by a different mechanism (surface growth) and do not show any selectivity. (orig.)

  20. 'Sapphire' project. Objectives and outcomes

    International Nuclear Information System (INIS)

    Shkolnik, V.S.

    1997-01-01

    'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

  1. Sapphire capillary interstitial irradiators for laser medicine

    Science.gov (United States)

    Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

    2018-04-01

    In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

  2. Neutralization by metal ions of the toxicity of sodium selenide.

    Directory of Open Access Journals (Sweden)

    Marc Dauplais

    Full Text Available Inert metal-selenide colloids are found in animals. They are believed to afford cross-protection against the toxicities of both metals and selenocompounds. Here, the toxicities of metal salt and sodium selenide mixtures were systematically studied using the death rate of Saccharomyces cerevisiae cells as an indicator. In parallel, the abilities of these mixtures to produce colloids were assessed. Studied metal cations could be classified in three groups: (i metal ions that protect cells against selenium toxicity and form insoluble colloids with selenide (Ag⁺, Cd²⁺, Cu²⁺, Hg²⁺, Pb²⁺ and Zn²⁺, (ii metal ions which protect cells by producing insoluble metal-selenide complexes and by catalyzing hydrogen selenide oxidation in the presence of dioxygen (Co²⁺ and Ni²⁺ and, finally, (iii metal ions which do not afford protection and do not interact (Ca²⁺, Mg²⁺, Mn²⁺ or weakly interact (Fe²⁺ with selenide under the assayed conditions. When occurring, the insoluble complexes formed from divalent metal ions and selenide contained equimolar amounts of metal and selenium atoms. With the monovalent silver ion, the complex contained two silver atoms per selenium atom. Next, because selenides are compounds prone to oxidation, the stabilities of the above colloids were evaluated under oxidizing conditions. 5,5'-dithiobis-(2-nitrobenzoic acid (DTNB, the reduction of which can be optically followed, was used to promote selenide oxidation. Complexes with cadmium, copper, lead, mercury or silver resisted dissolution by DTNB treatment over several hours. With nickel and cobalt, partial oxidation by DTNB occurred. On the other hand, when starting from ZnSe or FeSe complexes, full decompositions were obtained within a few tens of minutes. The above properties possibly explain why ZnSe and FeSe nanoparticles were not detected in animals exposed to selenocompounds.

  3. Ex situ formation of metal selenide quantum dots using bacterially derived selenide precursors

    International Nuclear Information System (INIS)

    Fellowes, J W; Pattrick, R A D; Lloyd, J R; Charnock, J M; Coker, V S; Mosselmans, J F W; Weng, T-C; Pearce, C I

    2013-01-01

    Luminescent quantum dots were synthesized using bacterially derived selenide (Se II− ) as the precursor. Biogenic Se II− was produced by the reduction of Se IV by Veillonella atypica and compared directly against borohydride-reduced Se IV for the production of glutathione-stabilized CdSe and β-mercaptoethanol-stabilized ZnSe nanoparticles by aqueous synthesis. Biological Se II− formed smaller, narrower size distributed QDs under the same conditions. The growth kinetics of biologically sourced CdSe phases were slower. The proteins isolated from filter sterilized biogenic Se II− included a methylmalonyl-CoA decarboxylase previously characterized in the closely related Veillonella parvula. XAS analysis of the glutathione-capped CdSe at the S K-edge suggested that sulfur from the glutathione was structurally incorporated within the CdSe. A novel synchrotron based XAS technique was also developed to follow the nucleation of biological and inorganic selenide phases, and showed that biogenic Se II− is more stable and more resistant to beam-induced oxidative damage than its inorganic counterpart. The bacterial production of quantum dot precursors offers an alternative, ‘green’ synthesis technique that negates the requirement of expensive, toxic chemicals and suggests a possible link to the exploitation of selenium contaminated waste streams. (paper)

  4. Ex Situ Formation of Metal Selenide Quantum Dots Using Bacterially Derived Selenide Precursors

    Energy Technology Data Exchange (ETDEWEB)

    Fellowes, Jonathan W.; Pattrick, Richard; Lloyd, Jon; Charnock, John M.; Coker, Victoria S.; Mosselmans, JFW; Weng, Tsu-Chien; Pearce, Carolyn I.

    2013-04-12

    Luminescent quantum dots were synthesized using bacterially derived selenide (SeII-) as the precursor. Biogenic SeII- was produced by the reduction of Se-IV by Veillonella atypica and compared directly against borohydride-reduced Se-IV for the production of glutathione-stabilized CdSe and beta-mercaptoethanol-stabilized ZnSe nanoparticles by aqueous synthesis. Biological SeII- formed smaller, narrower size distributed QDs under the same conditions. The growth kinetics of biologically sourced CdSe phases were slower. The proteins isolated from filter sterilized biogenic SeII- included a methylmalonyl-CoA decarboxylase previously characterized in the closely related Veillonella parvula. XAS analysis of the glutathione-capped CdSe at the S K-edge suggested that sulfur from the glutathione was structurally incorporated within the CdSe. A novel synchrotron based XAS technique was also developed to follow the nucleation of biological and inorganic selenide phases, and showed that biogenic SeII- is more stable and more resistant to beam-induced oxidative damage than its inorganic counterpart. The bacterial production of quantum dot precursors offers an alternative, 'green' synthesis technique that negates the requirement of expensive, toxic chemicals and suggests a possible link to the exploitation of selenium contaminated waste streams.

  5. Sapphire: A kinking nonlinear elastic solid

    Science.gov (United States)

    Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

    2006-03-01

    Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

  6. Slow recombination centers in cadmium selenide monocrystalline films

    International Nuclear Information System (INIS)

    Smyntyna, V.A.

    1983-01-01

    As a result of annealing when concentration of selenium Vacancies decreases due to their diffusion towards the surface, show recombination K-centers begin to influence the photoelectric properties of monocrystalline cadmium selenide layers. Energy levels of K-centers are located by 0.23-0.25 eV over the valent zone ceiling. The nature of K-centers is determined by the presence in the cadmium selenide layer structure of intrisic defects-cadmium vacancies in contrast to r-centers of slow recombination which are bound with impurities in a semiconductor material

  7. Retrograde tracing of zinc-enriched (ZEN) neuronal somata in rat spinal cord

    DEFF Research Database (Denmark)

    Wang, Z.; Danscher, G.; Jo, S.M.

    2001-01-01

    neurons have relatively short axons or boutons en passage close to the neuronal origin. Ultrastructurally, the retrogradely transported zinc selenide clusters were found in the lysosomes of ZEN somata and proximal dendrites. Electron microscopic studies also revealed two different kinds of ZEN terminals...

  8. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  9. Controllable laser thermal cleavage of sapphire wafers

    Science.gov (United States)

    Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

    2018-03-01

    Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

  10. Research Progress and Development of Sapphire Fiber Sensor

    Directory of Open Access Journals (Sweden)

    Guochang ZHAO

    2014-07-01

    Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

  11. Mechanochemical synthesis of nanocrystalline lead selenide. Industrial approach

    Energy Technology Data Exchange (ETDEWEB)

    Achimovicova, Marcela; Balaz, Peter [Slovak Academy of Sciences, Kosice (Slovakia). Inst. of Geotechnics; Durisin, Juraj [Slovak Academy of Sciences, Kosice (Slovakia). Inst. of Materials Research; Daneu, Nina [Josef Stefan Institute, Ljubljana (Slovenia). Dept. for Nanostructured Materials; Kovac, Juraj; Satka, Alexander [Slovak Univ. of Technology and International Laser Centre, Bratislava (Slovakia). Dept. of Microelectronics; Feldhoff, Armin [Leibniz Univ. Hannover (Germany). Inst. fuer Physikalische Chemie und Elektrochemie; Gock, Eberhard [Technical Univ. Clausthal, Clausthal-Zellerfeld (Germany). Inst. of Mineral and Waste Processing and Dumping Technology

    2011-04-15

    Mechanochemical synthesis of lead selenide PbSe nanoparticles was performed by high-energy milling of lead and selenium powder in a laboratory planetary ball mill and in an industrial eccentric vibratory mill. Structural properties of the synthesized lead selenide were characterized using X-ray diffraction that confirmed crystalline nature of PbSe nanoparticles. The average size of PbSe crystallites of 37 nm was calculated from X-ray diffraction data using the Williamson-Hall method. The methods of particle size distribution analysis, specific surface area measurement, scanning electron microscopy and transmission electron microscopy were used for characterization of surface, mean particle size, and morphology of PbSe. An application of industrial mill verified a possibility of the synthesis of a narrow bandgap semiconductor PbSe at ambient temperature and in a relatively short reaction time. (orig.)

  12. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells

    Energy Technology Data Exchange (ETDEWEB)

    Brun, Nadja Rebecca [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Wehrli, Bernhard [Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Fent, Karl, E-mail: karl.fent@fhnw.ch [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland)

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L{sup −1} molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L{sup −1}. From OPV, copper (14 μg L{sup −1}), zinc (87 μg L{sup −1}) and silver (78 μg L{sup −1}) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. - Highlights: • Photovoltaics may be disposed in the environment after usage. • Copper indium gallium selenide (CIGS) and organic (OPV) cells were compared. • Morphological and molecular effects were assessed in zebrafish embryos. • Environmental condition affected metal leaching and ecotoxicological activity. • Damaged CIGS cells pose higher risk to the environment than OPV cells.

  13. Selenide-Based Electrocatalysts and Scaffolds for Water Oxidation Applications

    KAUST Repository

    Xia, Chuan

    2015-11-05

    Selenide-based electrocatalysts and scaffolds on carbon cloth are successfully fabricated and demonstrated for enhanced water oxidation applications. A max­imum current density of 97.5 mA cm−2 at an overpotential of a mere 300 mV and a small Tafel slope of 77 mV dec−1 are achieved, suggesting the potential of these materials to serve as advanced oxygen evolution reaction catalysts.

  14. Coulometric titration at low temperatures-nonstoichiometric silver selenide

    OpenAIRE

    Beck, Gesa K.; Janek, Jürgen

    2003-01-01

    A modified coulometric titration technique is described for the investigation of nonstoichiometric phases at low temperatures. It allows to obtain titration curves at temperatures where the conventional coulometric titration technique fails because of too small chemical diffusion coefficients of the mobile component. This method for indirect coulometric titration is applied to silver selenide between -100 and 100 °C. The titration curves are analyzed on the basis of a defect chemical model an...

  15. Selenide-Based Electrocatalysts and Scaffolds for Water Oxidation Applications

    KAUST Repository

    Xia, Chuan; Jiang, Qiu; Zhao, Chao; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    Selenide-based electrocatalysts and scaffolds on carbon cloth are successfully fabricated and demonstrated for enhanced water oxidation applications. A max­imum current density of 97.5 mA cm−2 at an overpotential of a mere 300 mV and a small Tafel slope of 77 mV dec−1 are achieved, suggesting the potential of these materials to serve as advanced oxygen evolution reaction catalysts.

  16. Reduced cost and improved figure of sapphire optical components

    Science.gov (United States)

    Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

    2015-10-01

    Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

  17. Asymmetric supercapacitors with metal-like ternary selenides and porous graphene electrodes

    KAUST Repository

    Xia, Chuan; Jiang, Qiu; Zhao, Chao; Beaujuge, Pierre; Alshareef, Husam N.

    2016-01-01

    nanostructured ternary nickel cobalt selenides result in a much higher areal capacitance (2.33 F cm−2 at 4 mA cm−2), better rate performance and cycling stability than their binary selenide equivalents, and other ternary oxides and chalcogenides. Those hybrid

  18. Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.

    Science.gov (United States)

    Wen, Xixing; Chen, Chao; Lu, Shuaicheng; Li, Kanghua; Kondrotas, Rokas; Zhao, Yang; Chen, Wenhao; Gao, Liang; Wang, Chong; Zhang, Jun; Niu, Guangda; Tang, Jiang

    2018-06-05

    Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

  19. Description of Project Sapphire. Revision 1

    International Nuclear Information System (INIS)

    Taylor, R.G.

    1995-01-01

    The mission of Project Sapphire was to repackage approximately 600 kg of highly enriched uranium (HEU) in the Republic of Kazakhstan into internationally acceptable shipping packages and transport the material to a storage location in the United States. There were four material types to be repackaged: metal; oxide; uranium/beryllium (U/Be) alloy; and residues from U/Be alloy production. Seven major steps described in this report were necessary for successful execution of the project: planning and training; readiness assessment; deployment; set up; process; take down; and transport. Nuclear criticality safety especially affected several of these steps

  20. Lattice dynamics of sapphire (corundum). Pt. 2

    International Nuclear Information System (INIS)

    Kappus, W.

    1975-01-01

    Theoretical models of the lattice dynamics of sapphire (α - Al 2 O 3 ), based on the assumption of rigid ions, have been fitted to measured phonons at the Gamma-point of the Brillouin zone. Short range interactions were taken into account by assuming 2-body interactions between touching ions. Additional 3-body interactions could not improve the fit significantly. Calculated dispersion curves are presented and compared with inelastic neutron scattering data. A good agreement for branches along the trigonal axis can be stated. (orig.) [de

  1. A Century of Sapphire Crystal Growth

    Science.gov (United States)

    2004-05-17

    should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

  2. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

    1976-01-01

    Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

  3. Synthesis of titanium sapphire by ion implantation

    International Nuclear Information System (INIS)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

    1998-01-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

  4. Adsorption and gas-chromatographic properties of tungsten selenide

    International Nuclear Information System (INIS)

    Gavrilova, T.B.; Kiselev, A.V.; Roshchina, T.M.

    1988-01-01

    Method of gas chromatography was used to investigate the surface properties of a series of tungsten selenide WSe 2 samples as well as to determine the role of geometrical and electronic structure of adsorbate molecules and their orientation with respect to the surface during adsorption on WSe 2 . Thermodynamic characteristics of hydrocarbon C 6 -C 10 adsorption at surface occupation close to the zero one were determined. Correlation of the values of thermodynamic characteristics of saturated and aromatic hydrocarbon adsorption enabled to refer WSe 2 to nonspecific adsorbents. It is noted that the main role during hydrocarbon adsorption on WSe 2 is played by nonpolar basic facets, occupied by selenium atoms

  5. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

    Science.gov (United States)

    Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Interaction distances in oxides, sulfides and selenides with face-centered packing

    International Nuclear Information System (INIS)

    Kesler, Ya.A.

    1993-01-01

    Concept of characteristic distances (CD) was specified with account of the principle of topologically face-centered anion packing: calculation method was presented and boundary conditions of CD concept applicability were considered. Tables of CD in oxides, sulfides and selenides, obtained in result of self-consistent calculations on the basis of experimental crystallographic data, are presented. Pair correlations between CD in oxides, sulfides and selenides were considered, their relationship with cation electron structure was established. Peculiarities of chemical bond in oxides, sulfides and selenides with face-centered anion packing were discussed

  7. A facile way to control phase of tin selenide flakes by chemical vapor deposition

    Science.gov (United States)

    Wang, Zhigang; Pang, Fei

    2018-06-01

    Although two-dimensional (2D) tin selenides are attracting intense attentions, studies on its phase transition are still relatively few. Here we report a facile way to control the phase growth of tin selenide flakes on mica and SiO2/Si by only adjusting nominal Sn:Se ratio, which refers to the amount of loaded SnO2 and Se precursors. High normal Sn:Se ratio induced SnSe flakes, conversely SnSe2 flakes formed. It could be used as a practical guide to selectively synthesize pure phase of single crystalline 2D layered chalcogenide materials similar to tin selenides.

  8. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  9. Green Hydroselenation of Aryl Alkynes: Divinyl Selenides as a Precursor of Resveratrol

    Directory of Open Access Journals (Sweden)

    Gelson Perin

    2017-02-01

    Full Text Available A simple and efficient protocol to prepare divinyl selenides has been developed by the regio- and stereoselective addition of sodium selenide species to aryl alkynes. The nucleophilic species was generates in situ, from the reaction of elemental selenium with NaBH4, utilizing PEG-400 as the solvent. Several divinyl selenides were obtained in moderate to excellent yields with selectivity for the (Z,Z-isomer by a one-step procedure that was carried out at 60 °C in short reaction times. The methodology was extended to tellurium, giving the desired divinyl tellurides in good yields. Furthermore, the Fe-catalyzed cross-coupling reaction of bis(3,5-dimethoxystyryl selenide 3f with (4-methoxyphenylmagnesium bromide 5 afforded resveratrol trimethyl ether 6 in 57% yield.

  10. In Silico Studies of Mammalian δ-ALAD Interactions with Selenides and Selenoxides.

    Science.gov (United States)

    Andrei Nogara, Pablo; Batista Teixeira Rocha, João

    2018-04-01

    Previous studies have shown that the mammalian δ-aminolevulinic acid dehydratase (δ-ALAD) is inhibited by selenides and selenoxides, which can involve thiol oxidation. However, the precise molecular interaction of selenides and selenoxides with the active center of the enzyme is unknown. Here, we try to explain the interaction of selenides and the respective selenoxides with human δ-ALAD by in silico molecular docking. The in silico data indicated that Se atoms of selenoxides have higher electrophilic character than their respective selenides. Further, the presence of oxygen increased the interaction of selenoxides with the δ-ALAD active site by O…Zn coordination. The interaction of S atom from Cys124 with the Se atom indicated the importance of the nucleophilic attack of the enzyme thiolate to the organoselenium molecules. These observations help us to understand the interaction of target proteins with organoselenium compounds. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Green Hydroselenation of Aryl Alkynes: Divinyl Selenides as a Precursor of Resveratrol.

    Science.gov (United States)

    Perin, Gelson; Barcellos, Angelita M; Luz, Eduardo Q; Borges, Elton L; Jacob, Raquel G; Lenardão, Eder J; Sancineto, Luca; Santi, Claudio

    2017-02-20

    A simple and efficient protocol to prepare divinyl selenides has been developed by the regio- and stereoselective addition of sodium selenide species to aryl alkynes. The nucleophilic species was generates in situ , from the reaction of elemental selenium with NaBH₄, utilizing PEG-400 as the solvent. Several divinyl selenides were obtained in moderate to excellent yields with selectivity for the ( Z , Z )-isomer by a one-step procedure that was carried out at 60 °C in short reaction times. The methodology was extended to tellurium, giving the desired divinyl tellurides in good yields. Furthermore, the Fe-catalyzed cross-coupling reaction of bis(3,5-dimethoxystyryl) selenide 3f with (4-methoxyphenyl)magnesium bromide 5 afforded resveratrol trimethyl ether 6 in 57% yield.

  12. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  13. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-01-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)

  14. Neutron Transmission of Single-crystal Sapphire Filters

    Science.gov (United States)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-05-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

  15. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2004-01-01

    A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons

  16. Oleophobic properties of the step-and-terrace sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.

  17. Controlled Growth of ZnSe Nanocrystals by Tuning Reactivity and Amount of Zinc Precursor

    Directory of Open Access Journals (Sweden)

    Lai-Jun Zhang

    2013-01-01

    Full Text Available Zinc selenide (ZnSe nanocrystals were synthesized via a phosphine-free route using the highly reactive alkylamine-H2Se complex as selenium precursor and zinc precursors with different reactivity. The reactivity of zinc precursor was tuned by using three kinds of zinc carboxylates with different alkyl chain lengths, including zinc acetate, zinc nonanoate, and zinc stearate. The effect of the reactivity and the amount of zinc precursor on nucleation and growth of ZnSe nanocrystals were investigated by ultraviolet-visible absorption and photoluminescence spectra. Result indicates that the growth and optical property of the resulting ZnSe nanocrystals are strongly dependent on the alkyl chain length and the amount of the zinc carboxylates and both shorter alkyl chain length, and more amount of zinc carboxylate will lead to faster growth of ZnSe nanocrystals. This allows that the controlled growth and excellent optical property of high-quality ZnSe nanocrystals can be achieved by combining the different reactivity and the used amount of zinc precursor, such as by using stoichiometric and reactive Zn precursor and Se precursor or by using larger amount of more unreactive Zn precursor relative to the highly reactive alkylamine-H2Se complex precursor.

  18. Selenide isotope generator for the Galileo mission. Reliability program plan

    International Nuclear Information System (INIS)

    1978-10-01

    The reliability program plan for the Selenide Isotope Generator (SIG) program is presented. It delineates the specific tasks that will be accomplished by Teledyne Energy Systems and its suppliers during design, development, fabrication and test of deliverable Radioisotopic Thermoelectric Generators (RTG), Electrical Heated Thermoelectric Generators (ETG) and associated Ground Support Equipment (GSE). The Plan is formulated in general accordance with procedures specified in DOE Reliability Engineering Program Requirements Publication No. SNS-2, dated June 17, 1974. The Reliability Program Plan presented herein defines the total reliability effort without further reference to Government Specifications. The reliability tasks to be accomplished are delineated herein and become the basis for contract compliance to the extent specified in the SIG contract Statement of Work

  19. Reliability improvement methods for sapphire fiber temperature sensors

    Science.gov (United States)

    Schietinger, C.; Adams, B.

    1991-08-01

    Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

  20. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

    Science.gov (United States)

    Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

    2014-03-10

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

  1. Optical studies of 2DEGs in Zinc Selenide quantum wells in high magnetic fields

    International Nuclear Information System (INIS)

    Ossau, Wolfgang J.; Astakhov, G.V.; Yakovlev, D.R.; Crooker, Scott A.; Waag, A.

    2002-01-01

    Optical properties of a two-dimensional electron gas in ZnSe/(Zn,Be,Mg)Se quantum well structures have been examined by means of photoluminescence and reflectivity techniques in external magnetic fields up to 50 T. For these structures the Fermi energy of the two-dimensional electron gas is falling in the range between the trion binding energy and the exciton binding energy, which keeps the dominating role of Coulombic interaction between electrons and photoexcited holes. Characteristic peculiarities of optical spectra are discussed.

  2. Wavelength dependent measurement of extinction in an extended-face crystal of zinc selenide

    International Nuclear Information System (INIS)

    Stevenson, A.W.; Barnea, Z.

    1982-01-01

    The effect of extinction on Bijvoet ratios is demonstrated. It is suggested that an observed anomaly in the wavelength dependence of ZnSe Bijvoet ratios is due to the Borrmann effect. It is shown that wavelength dependent studies of extinction may be used to obtain extinction parameters from relative intensity measurements without resorting to a refined scale factor

  3. Observation of point defects in impurity-doped zinc selenide films using a monoenergetic positron beam

    International Nuclear Information System (INIS)

    Miyajima, T.; Okuyama, H.; Akimoto, K.; Mori, Y.; Wei, L.; Tanigawa, S.

    1992-01-01

    We studied point defects in ZnSe films grown by molecular beam epitaxy using the positron annihilation method. We found that doping with Ga atoms induces vacancy-type defects such as Zn vacancies, and that heavy doping with oxygen atoms induces interstitial type defects. We think that these defects are one of the causes of active carrier saturation in doped ZnSe films. (author)

  4. Ozone Oxidation of Self-Assembled Monolayers on SiOx-Coated Zinc Selenide Surfaces

    Science.gov (United States)

    McIntire, T. M.; Ryder, O. S.; Finlayson-Pitts, B. J.

    2008-12-01

    Airborne particles are important for visibility, human health, climate, and atmospheric reactions. Atmospheric particles contain a significant fraction of organics and such compounds present on airborne particles are susceptible to oxidation by atmospheric oxidants, such as OH, ozone, halogen atoms, and nitrogen trioxide. Oxidized organics associated with airborne particles are thought to be polar, hygroscopic species with enhanced cloud-nucleating properties. Oxide layers on silicon, or SiO2-coated substrates, act as models of environmentally relevant surfaces such as dust particles upon which organics adsorb. We have shown previously that ozone oxidation of unsaturated self-assembled monolayers (SAMs) on silicon attenuated total reflectance (ATR) crystals leads to the formation of carbonyl groups and micron-sized, hydrophobic organic aggregates surrounded by carbon depleted substrate that do not have increased water uptake as previously assumed. Reported here are further ATR-FTIR studies of the oxidation of alkene SAMs on ZnSe and SiO2-coated ZnSe. These substrates have the advantage that they transmit below 1500 cm-1, allowing detection of additional product species. These experiments show that the loss of C=C and formation of carbonyl groups is also accompanied by formation of a peak at 1110 cm-1, attributed to the secondary ozonide. Details concerning the products and mechanism of ozonolysis of alkene SAMs on surfaces based on these new data are presented and the implications for the oxidation of alkenes on airborne dust particles are discussed.

  5. High energy iron ion implantation into sapphire

    International Nuclear Information System (INIS)

    Allen, W.R.; Pedraza, D.F.

    1990-01-01

    Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

  6. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  7. Spatial chirp in Ti:sapphire multipass amplifier

    International Nuclear Information System (INIS)

    Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

    2017-01-01

    The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

  8. Synthesis and stability of hydrogen selenide compounds at high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Pace, Edward J.; Binns, Jack; Alvarez, Miriam Pena; Dalladay-Simpson, Philip; Gregoryanz, Eugene; Howie, Ross T. (Edinburgh); (CHPSTAR- China)

    2017-11-14

    The observation of high-temperature superconductivity in hydride sulfide (H2S) at high pressures has generated considerable interest in compressed hydrogen-rich compounds. High-pressure hydrogen selenide (H2Se) has also been predicted to be superconducting at high temperatures; however, its behaviour and stability upon compression remains unknown. In this study, we synthesize H2Se in situ from elemental Se and molecular H2 at pressures of 0.4 GPa and temperatures of 473 K. On compression at 300 K, we observe the high-pressure solid phase sequence (I-I'-IV) of H2Se through Raman spectroscopy and x-ray diffraction measurements, before dissociation into its constituent elements. Through the compression of H2Se in H2 media, we also observe the formation of a host-guest structure, (H2Se)2H2, which is stable at the same conditions as H2Se, with respect to decomposition. These measurements show that the behaviour of H2Se is remarkably similar to that of H2S and provides further understanding of the hydrogen chalcogenides under pressure.

  9. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  10. Sapphire-fiber-based distributed high-temperature sensing system.

    Science.gov (United States)

    Liu, Bo; Yu, Zhihao; Hill, Cary; Cheng, Yujie; Homa, Daniel; Pickrell, Gary; Wang, Anbo

    2016-09-15

    We present, for the first time to our knowledge, a sapphire-fiber-based distributed high-temperature sensing system based on a Raman distributed sensing technique. High peak power laser pulses at 532 nm were coupled into the sapphire fiber to generate the Raman signal. The returned Raman Stokes and anti-Stokes signals were measured in the time domain to determine the temperature distribution along the fiber. The sensor was demonstrated from room temperature up to 1200°C in which the average standard deviation is about 3.7°C and a spatial resolution of about 14 cm was achieved.

  11. SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

    Energy Technology Data Exchange (ETDEWEB)

    Shimoji, Yutaka

    2010-08-09

    Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

  12. Assessment of fibrous insulation materials for the selenide isotope generator system

    International Nuclear Information System (INIS)

    Wei, G.C; Tennery, V.J.

    1977-11-01

    Fibrous insulations for use in the converter and the heat source of the radioisotope-powered, selenide element, thermoelectric generator (selenide isotope generator) are assessed. The most recent system design and material selection basis is presented. Several fibrous insulation materials which have the potential for use as load-bearing or nonload-bearing thermal insulations are reviewed, and thermophysical properties supplied by manufacturers or published in the literature are presented. Potential problems with the application of fibrous insulations in the selenide isotope generator are as follows: compatibility with graphite, the thermoelectric elements, and the isolation hot frame; devitrification, grain growth, and sintering with an accompanying degradation of insulation quality; impurity diffusion from the insulation to adjoining structures; outgassing and storage of fibrous materials. Areas in which thermophysical data or quantitative information on the insulation and structural stability is lacking are identified

  13. Ammonia-free chemical bath method for deposition of microcrystalline cadmium selenide films

    International Nuclear Information System (INIS)

    Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    Chemical deposition of cadmium selenide (CdSe) films has been carried out from alkaline aqueous solution containing Cd 2+ and Se 2- ions. In general, the alkaline pH of the CdSe deposition bath has been adjusted by addition of liquid ammonia. However, the use of ammonia in large-scale chemical deposition method represents an environmental problem due to its volatility and toxicity. The volatility of ammonia changes the pH of deposition bath and results into irreproducible film properties. In the present paper, ammonia-free and weak alkaline (pH < 9.0) chemical method for cadmium selenide film has been developed. The cadmium selenide films are microcrystalline (grain size 0.5-0.7 μm) with hexagonal crystal structure. These films are photoactive and therefore, useful in photo conversion of light into electrical power

  14. Metal Selenides as Efficient Counter Electrodes for Dye-Sensitized Solar Cells.

    Science.gov (United States)

    Jin, Zhitong; Zhang, Meirong; Wang, Min; Feng, Chuanqi; Wang, Zhong-Sheng

    2017-04-18

    Solar energy is the most abundant renewable energy available to the earth and can meet the energy needs of humankind, but efficient conversion of solar energy to electricity is an urgent issue of scientific research. As the third-generation photovoltaic technology, dye-sensitized solar cells (DSSCs) have gained great attention since the landmark efficiency of ∼7% reported by O'Regan and Grätzel. The most attractive features of DSSCs include low cost, simple manufacturing processes, medium-purity materials, and theoretically high power conversion efficiencies. As one of the key materials in DSSCs, the counter electrode (CE) plays a crucial role in completing the electric circuit by catalyzing the reduction of the oxidized state to the reduced state for a redox couple (e.g., I 3 - /I - ) in the electrolyte at the CE-electrolyte interface. To lower the cost caused by the typically used Pt CE, which restricts the large-scale application because of its low reserves and high price, great effort has been made to develop new CE materials alternative to Pt. A lot of Pt-free electrocatalysts, such as carbon materials, inorganic compounds, conductive polymers, and their composites with good electrocatalytic activity, have been applied as CEs in DSSCs in the past years. Metal selenides have been widely used as electrocatalysts for the oxygen reduction reaction and light-harvesting materials for solar cells. Our group first expanded their applications to the DSSC field by using in situ-grown Co 0.85 Se nanosheet and Ni 0.85 Se nanoparticle films as CEs. This finding has inspired extensive studies on developing new metal selenides in order to seek more efficient CE materials for low-cost DSSCs, and a lot of meaningful results have been achieved in the past years. In this Account, we summarize recent advances in binary and mutinary metal selenides applied as CEs in DSSCs. The synthetic methods for metal selenides with various morphologies and stoichiometric ratios and

  15. Microscopic origin of the optical processes in blue sapphire.

    Science.gov (United States)

    Bristow, Jessica K; Parker, Stephen C; Catlow, C Richard A; Woodley, Scott M; Walsh, Aron

    2013-06-11

    Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

  16. Microscopic origin of the optical processes in blue sapphire

    OpenAIRE

    Bristow, JK; Parker, SC; Catlow, CRA; Woodley, SM; Walsh, A

    2013-01-01

    Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

  17. Antireflection coatings for intraocular lenses of sapphire and fianite

    Energy Technology Data Exchange (ETDEWEB)

    Babin, A.A.; Konoplev, Yu.N.; Mamaev, Yu.A. [Inst. of Applied Physics, Nizhnii Novgorod (Russian Federation)] [and others

    1995-10-01

    Broadband antireflection coatings for intraocular lenses of sapphire and fianite are calculated and implemented practically. Their residual reflectance in the liquid with a refracting index of 1.336 is below 0.2% from each face virtually over the entire visible region. 7 refs., 2 figs., 2 tabs.

  18. Oxidation states of Fe and Ti in blue sapphire

    International Nuclear Information System (INIS)

    Wongrawang, P; Wongkokua, W; Monarumit, N; Thammajak, N; Wathanakul, P

    2016-01-01

    X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe 2+ and Ti 4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe 3+ state; and Ti at 4984 eV, corresponding to Ti 4+ . From these results, we propose Fe 3+ -Ti 4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV–vis absorption spectra, to describe the cause of the color of blue sapphire. (paper)

  19. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  20. Scintillation of sapphire under particle excitation at low temperature

    International Nuclear Information System (INIS)

    Amare, J; Beltran, B; Cebrian, S; Coron, N; Dambier, G; GarcIa, E; Gomez, H; Irastorza, I G; Leblanc, J; Luzon, G; Marcillac, P de; Martinez, M; Morales, J; Ortiz de Solorzano, A; Pobes, C; Puimedon, J; Redon, T; RodrIguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A

    2006-01-01

    The scintillation properties of undoped sapphire at very low temperature have been studied in the framework of the ROSEBUD (Rare Objects SEarch with Bolometers UnDerground) Collaboration devoted to dark matter searches. We present an estimation of its light yield under gamma, alpha and neutron excitation

  1. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison

  2. Photoconductivity in reactively evaporated copper indium selenide thin films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-01

    Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

  3. Interaction between nanoparticles generated by zinc chloride treatment and oxidative responses in rat liver

    Directory of Open Access Journals (Sweden)

    Azzouz I

    2013-12-01

    Full Text Available Inès Azzouz, Hamdi Trabelsi, Amel Hanini, Soumaya Ferchichi, Olfa Tebourbi, Mohsen Sakly, Hafedh AbdelmelekLaboratory of Integrative Physiology, Faculty of Sciences of Bizerte, Carthage University, TunisiaAbstract: The aim of the present study was to investigate the interaction of zinc chloride (3 mg/kg, intraperitoneally [ip] in rat liver in terms of the biosynthesis of nanoparticles. Zinc treatment increased zinc content in rat liver. Analysis of fluorescence revealed the presence of red fluorescence in the liver following zinc treatment. Interestingly, the co-exposure to zinc (3 mg/kg, ip and selenium (0.20 mg/L, per os [by mouth] led to a higher intensity of red fluorescence compared to zinc-treated rats. In addition, X-ray diffraction measurements carried out on liver fractions of zinc-treated rats point to the biosynthesis of zinc sulfide and/or selenide nanocomplexes at nearly 51.60 nm in size. Moreover, co-exposure led to nanocomplexes of about 72.60 nm in size. The interaction of zinc with other mineral elements (S, Se generates several nanocomplexes, such as ZnS and/or ZnSe. The nanocomplex ZnX could interact directly with enzyme activity or indirectly by the disruption of mineral elements' bioavailability in cells. Subacute zinc or selenium treatment decreased malondialdehyde levels, indicating a drop in lipid peroxidation. In addition, antioxidant enzyme assays showed that treatment with zinc or co-treatment with zinc and selenium increased the activities of glutathione peroxidase, catalase, and superoxide dismutase. Consequently, zinc complexation with sulfur and/or selenium at nanoscale level could enhance antioxidative responses, which is correlated to the ratio of number of ZnX nanoparticles (X=sulfur or X=selenium to malondialdehyde level in rat liver.Keywords: nanocomplexes biosynthesis, antioxidative responses, X-ray diffraction, fluorescence microscopy, liver

  4. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    International Nuclear Information System (INIS)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-01-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices. (paper)

  5. Optimizing Ti:Sapphire laser for quantitative biomedical imaging

    Science.gov (United States)

    James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

    2018-02-01

    Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

  6. Selenide Mineralization in the Příbram Uranium and Base-Metal District (Czech Republic

    Directory of Open Access Journals (Sweden)

    Pavel Škácha

    2017-06-01

    Full Text Available Selenium mineralization in the Příbram uranium and base-metal district (Central Bohemia, Czech Republic bound to uraninite occurrences in calcite hydrothermal veins is extremely diverse. The selenides antimonselite, athabascaite, bellidoite, berzelianite, brodtkorbite, bukovite, bytízite, cadmoselite, chaméanite, clausthalite, crookesite, dzharkenite, eskebornite, eucairite, ferroselite, giraudite, hakite, klockmannite, naumannite, permingeatite, příbramite, sabatierite, tiemannite, and umangite were found here, including two new mineral phases: Hg-Cu-Sb and Cu-As selenides. Those selenides—and in some cases their sulphidic equivalents—are characterized using wavelength-dispersive spectroscopy, reflected light, powder X-ray diffraction, single crystal X-ray diffraction, Raman spectroscopy, and electron backscatter diffraction. The selenide mineralization in the Příbram uranium district is bound to the border of the carbonate-uraninite and subsequent carbonate-sulphidic stages. Selenides crystallized there at temperatures near 100 °C in the neutral-to-weakly-alkaline environment from solutions with high oxygen fugacity and a high Se2/S2 fugacity ratio.

  7. The bulk modulus of cubic spinel selenides: an experimental and theoretical study

    DEFF Research Database (Denmark)

    Waskowska, A.; Gerward, Leif; Olsen, J.S.

    2009-01-01

    It is argued that mainly the selenium sublattice determines the overall compressibility of the cubic spinel selenides, AB2Se4, and that the bulk modulus for these compounds is about 100GPa. The hypothesis is supported by experiments using high-pressure X-ray diffraction and synchrotron radiation...

  8. A simple and effective approach to the synthesis of alkynyl selenides from terminal alkynes

    Institute of Scientific and Technical Information of China (English)

    Barahman Movassagh; Mozhgan Navidi

    2012-01-01

    Alkynyl selenides were prepared under very mild conditions by reacting terminal alkynes with respective diorganic diselenides in the presence of potassium t-butoxide.The advantages of this protocol include the use of readily available substrates and reagent and good yield of the products.

  9. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  10. Symptomatic zinc deficiency in experimental zinc deprivation.

    OpenAIRE

    Taylor, C M; Goode, H F; Aggett, P J; Bremner, I; Walker, B E; Kelleher, J

    1992-01-01

    An evaluation of indices of poor zinc status was undertaken in five male subjects in whom dietary zinc intake was reduced from 85 mumol d-1 in an initial phase of the study to 14 mumol d-1. One of the subjects developed features consistent with zinc deficiency after receiving the low zinc diet for 12 days. These features included retroauricular acneform macullo-papular lesions on the face, neck, and shoulders and reductions in plasma zinc, red blood cell zinc, neutrophil zinc and plasma alkal...

  11. Diagnostic Genesis Features of Au-Ag Selenide-Telluride Mineralization of Western Java Deposits

    Directory of Open Access Journals (Sweden)

    Euis Tintin Yuningsih

    2016-01-01

    Full Text Available DOI: 10.17014/ijog.3.1.67-76The ore mineralogy of the westernmost part of West Java such as Pongkor, Cibaliung, Cikidang, Cikotok, and Cirotan are characterized by the dominance of silver-arsenic-antimony sulfosalt with silver selenides and rarely tellurides over the argentite, whereas the eastern part of West Java including Arinem and Cineam deposits are dominated by silver-gold tellurides. Mineralogy of Se-type deposits at Pongkor, Cikidang, Cibaliung, Cisungsang, and Cirotan and Te-type deposits at Arinem and Cineam shows their different geochemical characteristics. Mineralogical and geochemical differences can be explained by variation of physico-chemical conditions that existed during gold-silver deposition by applying the phase relation among sulfide, telluride, and selenide mineral association in the deposits. The relative values of ƒSe2(g, ƒTe(g, and ƒS2(g control the actual presence of selenide or telluride minerals within the West Java deposits, which also depend on their concentrations in the hydrothermal fluid. Even though the concentration of selenium in the hydrothermal fluid of Te-type deposits might have been similar or even higher than that in the Se-type, early substitution of selenium in the sulfide minerals prevents its concentration in the hydrothermal fluid to the levels for precipitating selenide minerals. Therefore, early sulfide mineral deposition from reduction fluids will not increase the ƒSe2(g/ƒS2(g ratio to form selenide minerals in Te-type deposits of Arinem and Cineam, other than selenium-bearing sulfide mineral such as Se-bearing galena or Se-bearing pyrargyrite-proustite.

  12. Neutron method for NDA in the Sapphire Project

    International Nuclear Information System (INIS)

    Lewis, K.D.

    1995-01-01

    The implementation of Project Sapphire, the top-secret mission to the Republic of Kazakhstan to recover weapons-grade nuclear materials, consisted of four major elements: (1) repacking of fissile material from Kazakh containers into suitable U.S. containers; (2) nondestructive analyses (NDA) to quantify the 235 U content of each container for nuclear criticality safety and compliance purposes; (3) packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of the Sapphire operations to analyze uranium/beryllium (U/Be) alloys and compounds for 235 U content

  13. A neutron method for NDA analysis in the SAPPHIRE Project

    International Nuclear Information System (INIS)

    Lewis, K.D.

    1995-01-01

    The implementation of Project SAPPHIRE, the top secret mission to the Republic of Kazakhstan to recover weapons grade nuclear materials, consisted of four major elements: (1) the re-packing of fissile material from Kazakh containers into suitable US containers; (2) nondestructive analyses (NDA) to quantify the U-235 content of each container for Nuclear Criticality Safety and compliance purposes; (3) the packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) the shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of SAPPHIRE operations to analyze uranium/beryllium (U/Be) alloys and compounds for U-235 content

  14. Photonics of 2D gold nanolayers on sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Nabatov, B. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation); Konovko, A. A.; Belov, I. V.; Gizetdinov, R. M.; Andreev, A. V. [Moscow State University (Russian Federation); Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    Gold layers with thicknesses of up to several nanometers, including ordered and disordered 2D nanostructures of gold particles, have been formed on sapphire substrates; their morphology is described; and optical investigations are carried out. The possibility of increasing the accuracy of predicting the optical properties of gold layers and 2D nanostructures using quantum-mechanical models based on functional density theory calculation techniques is considered. The application potential of the obtained materials in photonics is estimated.

  15. Time dependent temperature distribution in pulsed Ti:sapphire lasers

    Science.gov (United States)

    Buoncristiani, A. Martin; Byvik, Charles E.; Farrukh, Usamah O.

    1988-01-01

    An expression is derived for the time dependent temperature distribution in a finite solid state laser rod for an end-pumped beam of arbitrary shape. The specific case of end pumping by circular (constant) or Gaussian beam is described. The temperature profile for a single pump pulse and for repetitive pulse operation is discussed. The particular case of the temperature distribution in a pulsed titanium:sapphire rod is considered.

  16. An injection modelocked Ti-sapphire laser for synchronous photoinjection

    International Nuclear Information System (INIS)

    Hovater, C.; Poelker, M.

    1997-01-01

    The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

  17. Thermal neutron scattering kernels for sapphire and silicon single crystals

    International Nuclear Information System (INIS)

    Cantargi, F.; Granada, J.R.; Mayer, R.E.

    2015-01-01

    Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

  18. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  19. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  20. Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

    Science.gov (United States)

    Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

    2017-09-01

    Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

  1. Zinc Signals and Immunity.

    Science.gov (United States)

    Maywald, Martina; Wessels, Inga; Rink, Lothar

    2017-10-24

    Zinc homeostasis is crucial for an adequate function of the immune system. Zinc deficiency as well as zinc excess result in severe disturbances in immune cell numbers and activities, which can result in increased susceptibility to infections and development of especially inflammatory diseases. This review focuses on the role of zinc in regulating intracellular signaling pathways in innate as well as adaptive immune cells. Main underlying molecular mechanisms and targets affected by altered zinc homeostasis, including kinases, caspases, phosphatases, and phosphodiesterases, will be highlighted in this article. In addition, the interplay of zinc homeostasis and the redox metabolism in affecting intracellular signaling will be emphasized. Key signaling pathways will be described in detail for the different cell types of the immune system. In this, effects of fast zinc flux, taking place within a few seconds to minutes will be distinguish from slower types of zinc signals, also designated as "zinc waves", and late homeostatic zinc signals regarding prolonged changes in intracellular zinc.

  2. Hydrothermal synthesis and characterization of sea urchin-like nickel and cobalt selenides nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xiaohe [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China) and School of Metallurgical Science and Engineering, Central South University, Changsha, Hunan 410083 (China)]. E-mail: liuxh@mail.csu.edu.cn; Zhang Ning [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Yi Ran [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Qiu Guanzhou [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Yan Aiguo [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Wu Hongyi [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Meng Dapeng [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Tang, Motang [School of Metallurgical Science and Engineering, Central South University, Changsha, Hunan 410083 (China)

    2007-05-25

    Sea urchin-like nanorod-based nickel and cobalt selenides nanocrystals have been selective synthesized via a hydrothermal reduction route in which hydrated nickel chloride and hydrated cobalt chloride were employed to supply Ni and Co source and aqueous hydrazine (N{sub 2}H{sub 4}.H{sub 2}O) was used as reducing agent. The composition, morphology, and structure of final products could be easily controlled by adjusting the molar ratios of reactants and process parameters such as hydrothermal time. The morphology and phase structure of the final products have been investigated by X-ray diffraction, transmission electron microscopy, and scanning electron microscopy. The probable formation mechanism of the sea urchin-like nanorod-based nickel and cobalt selenides nanocrystals was discussed on the basis of the experimental results.

  3. Electronic band structure and optical properties of antimony selenide under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Abhijit, B.K.; Jayaraman, Aditya; Molli, Muralikrishna, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam, 515 134 (India)

    2016-05-23

    In this work we present the optical properties of Antimony Selenide (Sb{sub 2}Se{sub 3}) under ambient conditions and under pressure of 9.2 GPa obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Optical properties like refractive index, absorption coefficient and optical conductivity are calculated using the WIEN2k code.

  4. Peroxidase-like activity of nanocrystalline cobalt selenide and its application for uric acid detection

    Directory of Open Access Journals (Sweden)

    Zhuang QQ

    2017-04-01

    Full Text Available Quan-Quan Zhuang,1 Zhi-Hang Lin,1 Yan-Cheng Jiang,1 Hao-Hua Deng,2 Shao-Bin He,1,3 Li-Ting Su,4 Xiao-Qiong Shi,2 Wei Chen2 1Department of Pharmacy, Affiliated Quanzhou First Hospital of Fujian Medical University, Quanzhou, 2Department of Pharmaceutical Analysis, School of Pharmacy, Fujian Medical University, Fuzhou, 3Department of Pharmacy, Quanzhou Infectious Disease Hospital, 4Department of Pharmaceutical Analysis, Quanzhou Medical College, Quanzhou, People’s Republic of China Abstract: Dendrite-like cobalt selenide nanostructures were synthesized from cobalt and selenium powder precursors by a solvothermal method in anhydrous ethylenediamine. The as-prepared nanocrystalline cobalt selenide was found to possess peroxidase-like activity that could catalyze the reaction of peroxidase substrates in the presence of H2O2. A spectrophotometric method for uric acid (UA determination was developed based on the nanocrystalline cobalt selenide-catalyzed coupling reaction between N-ethyl-N-(3-sulfopropyl-3-methylaniline sodium salt and 4-aminoantipyrine (4-AAP in the presence of H2O2. Under optimum conditions, the absorbance was proportional to the concentration of UA over the range of 2.0–40 µM with a detection limit of 0.5 µM. The applicability of the proposed method has been validated by determination of UA in human serum samples with satisfactory results. Keywords: enzyme mimics, cobalt selenide, peroxidase-like activity, uric acid, human serum

  5. Determination of dimethyl selenide and dimethyl sulphide compounds causing off-flavours in bottled mineral waters.

    Science.gov (United States)

    Guadayol, Marta; Cortina, Montserrat; Guadayol, Josep M; Caixach, Josep

    2016-04-01

    Sales of bottled drinking water have shown a large growth during the last two decades due to the general belief that this kind of water is healthier, its flavour is better and its consumption risk is lower than that of tap water. Due to the previous points, consumers are more demanding with bottled mineral water, especially when dealing with its organoleptic properties, like taste and odour. This work studies the compounds that can generate obnoxious smells, and that consumers have described like swampy, rotten eggs, sulphurous, cooked vegetable or cabbage. Closed loop stripping analysis (CLSA) has been used as a pre-concentration method for the analysis of off-flavour compounds in water followed by identification and quantification by means of GC-MS. Several bottled water with the aforementioned smells showed the presence of volatile dimethyl selenides and dimethyl sulphides, whose concentrations ranged, respectively, from 4 to 20 ng/L and from 1 to 63 ng/L. The low odour threshold concentrations (OTCs) of both organic selenide and sulphide derivatives prove that several objectionable odours in bottled waters arise from them. Microbial loads inherent to water sources, along with some critical conditions in water processing, could contribute to the formation of these compounds. There are few studies about volatile organic compounds in bottled drinking water and, at the best of our knowledge, this is the first study reporting the presence of dimethyl selenides and dimethyl sulphides causing odour problems in bottled waters. Copyright © 2016 Elsevier Ltd. All rights reserved.

  6. Theory of two-magnon Raman scattering in alkaline iron selenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.S. [Department of Physics, Yanshan University, Qinhuangdao 006004 (China); Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan (China); Zhang, A.M. [Department of Physics, Renmin University of China, Beijing 100872 (China); Xu, T.F. [Department of Physics, Yanshan University, Qinhuangdao 006004 (China); Wu, W.C., E-mail: wu@phy.ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan (China)

    2014-11-15

    Highlights: • Two-magnon Raman scattering is theoretically studied for alkaline iron selenides. • Underlying spin interactions of the √(5)×√(5) AF superstructure are investigated in details. • Optimal set of exchange parameters is revealed when fitting to experiments. - Abstract: Motivated by the recent experiment of two-magnon Raman scattering in alkaline iron selenide superconductors (Zhang et al., 2012), we investigate in details the underlying spin interactions of the √(5)×√(5) antiferromagnetic superstructure. Based on the linear spin wave approximation, the Fleury-London (FL) two-magnon Raman cross-sections are calculated. By comparing theoretical results with the Raman data in both A{sub g} and B{sub g} channels, an optimal set of exchange parameters which are consistent with the fitting to the neutron scattering data are obtained. It reveals that the experimentally observed broad and asymmetric peaks around 1600 cm{sup −1} are dominantly originated from quasiparticle excitations in two nearly degenerate magnon bands in the (0,±π) and (±π,0) directions. The result thus supports that the magnetic properties in alkaline iron selenide AFe{sub 1.6+x}Se{sub 6} superconductors can be basically described by the quantum spin model with up to third nearest-neighbor exchange couplings.

  7. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  8. Superconducting accelerometer using niobium-on-sapphire rf resonator

    International Nuclear Information System (INIS)

    Blair, D.G.

    1979-01-01

    An accelerometer is described which uses a rf niobium-on-sapphire resonator as its sensor element. The accelerometer uses a magnetically levitated spool as a test mass and the spool modulates the inductance of the resonator; its position is servo controlled to maintain the resonator at the external rf excitation frequency. The accelerometer has high sensitivity over the full audio frequency range, but is optimized for frequencies between 100 Hz and 1 kHz, where the calculated displacement sensitivity approaches 10 -15 cm for a 1 Hz measurement bandwidth. The system noise sources are analyzed and possible improvements are discussed

  9. Ultrafast, ultrahigh-peak power Ti:sapphire laser system

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

    2001-01-01

    We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

  10. Production of zinc pellets

    Science.gov (United States)

    Cooper, J.F.

    1996-11-26

    Uniform zinc pellets are formed for use in batteries having a stationary or moving slurry zinc particle electrode. The process involves the cathodic deposition of zinc in a finely divided morphology from battery reaction product onto a non-adhering electrode substrate. The mossy zinc is removed from the electrode substrate by the action of gravity, entrainment in a flowing electrolyte, or by mechanical action. The finely divided zinc particles are collected and pressed into pellets by a mechanical device such as an extruder, a roller and chopper, or a punch and die. The pure zinc pellets are returned to the zinc battery in a pumped slurry and have uniform size, density and reactivity. Applications include zinc-air fuel batteries, zinc-ferricyanide storage batteries, and zinc-nickel-oxide secondary batteries. 6 figs.

  11. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  12. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Science.gov (United States)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-12-01

    Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  13. Characterization of sapphire: For its material properties at high temperatures

    Science.gov (United States)

    Bal, Harman Singh

    There are numerous needs for sensing, one of which is in pressure sensing for high temperature application such as combustion related process and embedded in aircraft wings for reusable space vehicles. Currently, silicon based MEMS technology is used for pressure sensing. However, due to material properties the sensors have a limited range of approximately 600 °C which is capable of being pushed towards 1000 °C with active cooling. This can introduce reliability issues when you add more parts and high flow rates to remove large amounts of heat. To overcome this challenge, sapphire is investigated for optical based pressure transducers at temperatures approaching 1400 °C. Due to its hardness and chemical inertness, traditional cutting and etching methods used in MEMS technology are not applicable. A method that is being investigated as a possible alternative is laser machining using a picosecond laser. In this research, we study the material property changes that occur from laser machining and quantify the changes with the experimental results obtained by testing sapphire at high-temperature with a standard 4-point bending set-up.

  14. Thermal stress resistance of ion implanted sapphire crystals

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

    1999-01-01

    Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

  15. Dietary phytate, zinc and hidden zinc deficiency.

    Science.gov (United States)

    Sandstead, Harold H; Freeland-Graves, Jeanne H

    2014-10-01

    Epidemiological data suggest at least one in five humans are at risk of zinc deficiency. This is in large part because the phytate in cereals and legumes has not been removed during food preparation. Phytate, a potent indigestible ligand for zinc prevents it's absorption. Without knowledge of the frequency of consumption of foods rich in phytate, and foods rich in bioavailable zinc, the recognition of zinc deficiency early in the illness may be difficult. Plasma zinc is insensitive to early zinc deficiency. Serum ferritin concentration≤20μg/L is a potential indirect biomarker. Early effects of zinc deficiency are chemical, functional and may be "hidden". The clinical problem is illustrated by 2 studies that involved US Mexican-American children, and US premenopausal women. The children were consuming home diets that included traditional foods high in phytate. The premenopausal women were not eating red meat on a regular basis, and their consumption of phytate was mainly from bran breakfast cereals. In both studies the presence of zinc deficiency was proven by functional responses to controlled zinc treatment. In the children lean-mass, reasoning, and immunity were significantly affected. In the women memory, reasoning, and eye-hand coordination were significantly affected. A screening self-administered food frequency questionnaire for office might help caregiver's identify patients at risk of zinc deficiency. Copyright © 2014 Elsevier GmbH. All rights reserved.

  16. Nonlinearity Mechanism and Correction of Sapphire Fiber Temperature Sensor on Blackbody Cavity

    Directory of Open Access Journals (Sweden)

    Tiejun Cao

    2014-06-01

    Full Text Available Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stability of the sensor. In order to solve the nonlinear problems which exist in the measurement, at first, the sapphire fiber optic temperature sensor temperature measurement principle and nonlinear generation mechanism are studied; secondly piecewise linear interpolation and spline interpolation linearization algorithm is designed with combining the nonlinear characteristics of sapphire optical fiber temperature sensor, and the program is designed on its linear and associated signal processing. Experimental results show that a good linearization of sapphire fiber optic temperature sensor can been achieved in this method.

  17. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  18. BWR zinc addition Sourcebook

    International Nuclear Information System (INIS)

    Garcia, Susan E.; Giannelli, Joseph F.; Jarvis, Alfred J.

    2014-01-01

    Boiling Water Reactors (BWRs) have been injecting zinc into the primary coolant via the reactor feedwater system for over 25 years for the purpose of controlling primary system radiation fields. The BWR zinc injection process has evolved since the initial application at the Hope Creek Nuclear Station in 1986. Key transitions were from the original natural zinc oxide (NZO) to depleted zinc oxide (DZO), and from active zinc injection of a powdered zinc oxide slurry (pumped systems) to passive injection systems (zinc pellet beds). Zinc addition has continued through various chemistry regimes changes, from normal water chemistry (NWC) to hydrogen water chemistry (HWC) and HWC with noble metals (NobleChem™) for mitigation of intergranular stress corrosion cracking (IGSCC) of reactor internals and primary system piping. While past reports published by the Electric Power Research Institute (EPRI) document specific industry experience related to these topics, the Zinc Sourcebook was prepared to consolidate all of the experience gained over the past 25 years. The Zinc Sourcebook will benefit experienced BWR Chemistry, Operations, Radiation Protection and Engineering personnel as well as new people entering the nuclear power industry. While all North American BWRs implement feedwater zinc injection, a number of other BWRs do not inject zinc. This Sourcebook will also be a valuable resource to plants considering the benefits of zinc addition process implementation, and to gain insights on industry experience related to zinc process control and best practices. This paper presents some of the highlights from the Sourcebook. (author)

  19. Method of capturing or trapping zinc using zinc getter materials

    Science.gov (United States)

    Hunyadi Murph, Simona E.; Korinko, Paul S.

    2017-07-11

    A method of trapping or capturing zinc is disclosed. In particular, the method comprises a step of contacting a zinc vapor with a zinc getter material. The zinc getter material comprises nanoparticles and a metal substrate.

  20. Morphology-Tuned Synthesis of Nickel Cobalt Selenides as Highly Efficient Pt-Free Counter Electrode Catalysts for Dye-Sensitized Solar Cells.

    Science.gov (United States)

    Qian, Xing; Li, Hongmei; Shao, Li; Jiang, Xiancai; Hou, Linxi

    2016-11-02

    In this work, morphology-tuned ternary nickel cobalt selenides based on different Ni/Co molar ratios have been synthesized via a simple precursor conversion method and used as counter electrode (CE) materials for dye-sensitized solar cells (DSSCs). The experimental facts and mechanism analysis clarified the possible growth process of product. It can be found that the electrochemical performance and structures of ternary nickel cobalt selenides can be optimized by tuning the Ni/Co molar ratio. Benefiting from the unique morphology and tunable composition, among the as-prepared metal selenides, the electrochemical measurements showed that the ternary nickel cobalt selenides exhibited a more superior electrocatalytic activity in comparison with binary Ni and Co selenides. In particular, the three-dimensional dandelion-like Ni 0.33 Co 0.67 Se microspheres delivered much higher power conversion efficiency (9.01%) than that of Pt catalyst (8.30%) under AM 1.5G irradiation.

  1. The molecular beam epitaxy growth and characterization of zinc cadmium selenide/zinc cadmium magnesium selenide-indium phosphide quantum cascade structures for operation in the 3 - 5 um range

    Science.gov (United States)

    Charles, William O.

    The quantum cascade (QC) laser has captured the interest of researchers for almost three decades. In the early stages, researchers were very interested in proving the QC concept1 proposed by Kazarinov and Suris in 1971. This new concept gave researchers hope that very bulky energy inefficient infra-red (IR) lasers would be replaced with ones that are very compact, tunable and portable. Since the proposal of the QC laser concept and its first demonstration by researchers at Bell Laboratories2 in 1994, this technology has progressed to the point where it is now finding commercial applications in a variety of areas such as military counter measures, free space telecommunications, infra-red imaging and chemical spectroscopy.3-5 The success of this technology can be attributed to the coming of age of the techniques of molecular beam epitaxy (MBE) semiconductor growth and bandgap engineering. 6,7 Using MBE technology, the temperature of the source material can be stabilized by making use of a combination of proportional integral derivative (PID) controllers and thermocouple feedbacks. As a result, the material flux from the effusion cells can achieve stability better than (+/-) 1%. This flux stability together with a well-developed computer controlled shuttering mechanism make it possible to grow multi-quantum well (MQW) structures with excellent layer thickness precision (mono-layer scale) and interface quality. This stringent control of material flux is also a tool that is used by MBE growers to vary the material compositions for the growth of lattice matched and strain compensated QC structures. Today, MBE stands out as one of the premier methods for growing high performing QC lasers. The first successful demonstration of a QC laser2 was done using the InGaAs/InAlAs-InP material system. This demonstration was then repeated a few years later using GaAs/AlGaAs-InP.8 These III-V material systems were extensively studied to establish their material parameters. Given that material parameters are critically important in the process of modeling QC structures, it is not surprising that early success was achieved using these systems. Today, the best performing QC lasers operate in the 4--13 mum range and are produced using lattice matched InGaAs/InAlAs-InP. In order to produce short wavelength QC lasers, the well layer thicknesses in the active region of the device must be reduced in an effort to push the lasing energy states further apart. This reduction in well thicknesses results in the movement of the upper lasing state closer to the bandedge. This action increases the probability of the lost of lasing state electrons to the continuum. Therefore, in order to produce high performing short wavelength QC lasers, a large conduction band offset (CBO) is required. The CBO of lattice matched InGaAs/InAlAs-InP is 0.52 eV. In an attempt to produce high performing devices below 4 mum many researchers have resorted to the use of strain compensation9-11 . This approach has yielded very little improvement in performance due to electron scattering to the X and L intervalleys. This has lead to the exploration of wide bandgap material systems such as the antominides and nitrides. In this work the wide bandgap II-V Znx'Cd(1-x')Se/Zn xCdyMg(1-x-y)Se-InP will be explored for QC laser fabrication. To this end, QC lasers were designed for operation at 3--5 mum range. A Matlab-based program was written to calculate the energy level spacing within the active region of these devices. This simulation program was based on Schroindger's equation and the transfer matrix technique. Several calibration samples were grown to establish the doping levels and growth rate of the well and barrier materials. The growth rate was measured using scanning electron microscopy (SEM) and reflection high energy electron diffraction (RHEED) oscillations during MBE growth. X-ray diffraction measurements were performed to determine the lattice mismatch of the II-VI bulk layers, and therefore predict whether material composition adjustments were required to attain the lattice match condition. The samples that were grown were studied using photoluminescence (PL) to determine the bandgap of the well and barrier material. This information was then used to calculate the CBO of the II-VI MQW structure. In addition, PL studies were also carried out to look for material defects and assess the quality of the well/barrier interface. These II-VI QC samples were also subjected to Fourier transform infra-red (FTIR) absorption spectroscopy to determine the energy levels in the grown structures. After optimizing the active regions using simulation data and FTIR results, electroluminescence (EL) structures were grown and processed into QC emitters using a combination photolithography and electron beam contact deposition. The processed structures were then biased and investigated for IR emission at temperatures ranging from 80 K to room temperature.

  2. Zinc at glutamatergic synapses.

    Science.gov (United States)

    Paoletti, P; Vergnano, A M; Barbour, B; Casado, M

    2009-01-12

    It has long been known that the mammalian forebrain contains a subset of glutamatergic neurons that sequester zinc in their synaptic vesicles. This zinc may be released into the synaptic cleft upon neuronal activity. Extracellular zinc has the potential to interact with and modulate many different synaptic targets, including glutamate receptors and transporters. Among these targets, NMDA receptors appear particularly interesting because certain NMDA receptor subtypes (those containing the NR2A subunit) contain allosteric sites exquisitely sensitive to extracellular zinc. The existence of these high-affinity zinc binding sites raises the possibility that zinc may act both in a phasic and tonic mode. Changes in zinc concentration and subcellular zinc distribution have also been described in several pathological conditions linked to glutamatergic transmission dysfunctions. However, despite intense investigation, the functional significance of vesicular zinc remains largely a mystery. In this review, we present the anatomy and the physiology of the glutamatergic zinc-containing synapse. Particular emphasis is put on the molecular and cellular mechanisms underlying the putative roles of zinc as a messenger involved in excitatory synaptic transmission and plasticity. We also highlight the many controversial issues and unanswered questions. Finally, we present and compare two widely used zinc chelators, CaEDTA and tricine, and show why tricine should be preferred to CaEDTA when studying fast transient zinc elevations as may occur during synaptic activity.

  3. Surface study of irradiated sapphires from Phrae Province, Thailand using AFM

    Science.gov (United States)

    Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.

    2017-09-01

    The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.

  4. Optical and structural behaviour of Mn implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Franco, N.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2006-01-01

    Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 x 10 17 cm -2 . The samples were annealed at 1000 deg. C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 x 10 16 cm -2 , as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl 2 O 4 . On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission

  5. Site location and optical properties of Eu implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2005-01-01

    Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 x 10 16 cm -2 . Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 deg. C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 deg. C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements

  6. The SAPPHIRE and 50 MT projects at BWXT, Lynchburg, VA

    International Nuclear Information System (INIS)

    Thiele, R.; Horn, B.; Coates, C.W.; Stainback, J.R.

    2001-01-01

    Full text: When the SAPPHIRE project for the down-blending of HEU material of Khazak origin was initiated in 1996 at BWX Technologies (BWXT) formally Babcock and Wilcox in Lynchburg, VA and the Agency was requested to apply its specially designed safeguards measures to the process with a view to provide assurance to the international community that down-blending had actually taken place as stipulated in the USA-Khazak agreement a learning process was initiated from this effort culminating in the current 50 MT downblending process at the same facility with BWXT, the USA Authorities, and the Agency as partners in this technologically advanced enterprise aimed at the downgrading of a substantial quantity of weapons grade material. In the present paper an overview is provided of the road leading to an effective, and mutually agreeable safeguards approach for carrying out verifications in the sensitive environment of a facility devoted to HEU uranium processing. (author)

  7. CMOS Silicon-on-Sapphire RF Tunable Matching Networks

    Directory of Open Access Journals (Sweden)

    Chamseddine Ahmad

    2006-01-01

    Full Text Available This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

  8. Zinc oxide overdose

    Science.gov (United States)

    Zinc oxide is an ingredient in many products. Some of these are certain creams and ointments used ... prevent or treat minor skin burns and irritation. Zinc oxide overdose occurs when someone eats one of ...

  9. Electrosynthesis of cadmium selenide films from sodium citrate-selenosulphite bath

    International Nuclear Information System (INIS)

    Lokhande, C.D.; Lee, Eun-Ho; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    Electrosynthesis of cadmium selenide (CdSe) film has been carried out from deposition bath containing sodium selenosulphite, along with cadmium complexed with sodium citrate under potentiostatic deposition condition on titanium substrates. The pH of deposition bath was weakly basic (< 9.0). The CdSe films up to 3.0 μm were deposited. The X-ray diffraction (XRD) studies revealed that the CdSe films are microcrystalline with increased grain size after annealing. The scanning electron microscopy showed that the films are porous with cauliflower-like morphology. The photelectrochemical characterization showed that the CdSe films are photoactive

  10. Enhanced Manifold of States Achieved in Heterostructures of Iron Selenide and Boron-Doped Graphene

    Directory of Open Access Journals (Sweden)

    Valentina Cantatore

    2017-10-01

    Full Text Available Enhanced superconductivity is sought by employing heterostructures composed of boron-doped graphene and iron selenide. Build-up of a composite manifold of near-degenerate noninteracting states formed by coupling top-of-valence-band states of FeSe to bottom-of-conduction-band states of boron-doped graphene is demonstrated. Intra- and intersubsystem excitons are explored by means of density functional theory in order to articulate a normal state from which superconductivity may emerge. The results are discussed in the context of electron correlation in general and multi-band superconductivity in particular.

  11. Selenide mineralization in the Příbram uranium and base-metal district (Czech Republic)

    Czech Academy of Sciences Publication Activity Database

    Škácha, P.; Sejkora, J.; Plášil, Jakub

    2017-01-01

    Roč. 7, č. 6 (2017), s. 1-56, č. článku 91. ISSN 2075-163X R&D Projects: GA MŠk LO1603 EU Projects: European Commission(XE) CZ.2.16/3.1.00/24510 Institutional support: RVO:68378271 Keywords : selenides * chemical composition * crystal structure * wavelength-dispersive spectroscopy * X-ray diffraction * Příbram Subject RIV: DB - Geology ; Mineralogy OBOR OECD: Geology Impact factor: 2.088, year: 2016

  12. Enhanced performance of hybrid solar cells using longer arms of quantum cadmium selenide tetrapods

    KAUST Repository

    Lee, Kyu-Sung

    2011-12-01

    We demonstrate that enhanced device performance of hybrid solar cells based on tetrapod (TP)-shaped cadmium selenide (CdSe) nanoparticles and conjugated polymer of poly (3-hexylthiophene) (P3HT) can be obtained by using longer armed tetrapods which aids in better spatial connectivity, thus decreasing charge hopping events which lead to better charge transport. Longer tetrapods with 10 nm arm length lead to improved power conversion efficiency of 1.12% compared to 0.80% of device having 5 nm short-armed tetrapods:P3HT photoactive blends.

  13. Enhanced performance of hybrid solar cells using longer arms of quantum cadmium selenide tetrapods

    KAUST Repository

    Lee, Kyu-Sung; Kim, Inho; Gullapalli, Sravani; Wong, Michael S.; Jabbour, Ghassan E.

    2011-01-01

    We demonstrate that enhanced device performance of hybrid solar cells based on tetrapod (TP)-shaped cadmium selenide (CdSe) nanoparticles and conjugated polymer of poly (3-hexylthiophene) (P3HT) can be obtained by using longer armed tetrapods which aids in better spatial connectivity, thus decreasing charge hopping events which lead to better charge transport. Longer tetrapods with 10 nm arm length lead to improved power conversion efficiency of 1.12% compared to 0.80% of device having 5 nm short-armed tetrapods:P3HT photoactive blends.

  14. Sapphire/TiAl composites - structure and properties

    International Nuclear Information System (INIS)

    Povarova, K.B.; Antonova, A.V.; Mileiko, S.T.; Sarkissyan, N.S.

    2001-01-01

    Ti-Al-intermetallic-based alloys with lamellar microstructure, -γ(TiAl) +α 2 (Ti 3 Al) are characterized by a high melting point of 1460 o C, a low density of ∼3.9 g/cm 3 , a high gas corrosion resistance up to a temperature of about 900 o C, a high creep resistance up to a temperature of about 800 o C, and a sufficiently high fracture toughness at low temperatures, up to 30 Mpa x m 1/2 . Hence, they are considered as excellent matrices for fibres of high melting point. Unlike well-developed SiC/TiAl composites, which have an obvious upper limit for the usage temperature due to SiC/TiAl interaction, Sapphire/TiAl composites remain nearly unknown because fibres to be used in such composites have not been really available. At the present time, such fibres are developed in Solid State Physics Inst. of RAS. The results of preliminary creep tests of Al 2 O 3 /TiAl composites obtained by using pressure casting have shown that usage of such composite systems shifts the temperature limit for light structural materials in terms of creep resistance to, at least, 1050 o C: creep strength on 100 h time base reaches 120 MPa at that temperature. It occurs also that Sapphire-fibres/TiAl-matrix composite specimens have an increased gas corrosion resistance by more than one order of the magnitudes as compared with that of the matrix alloy. (author)

  15. Interfacial reactions between sapphire and Ag–Cu–Ti-based active braze alloys

    International Nuclear Information System (INIS)

    Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

    2016-01-01

    The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and sapphire have been studied. In separate experiments, Ag–35.3Cu–1.8Ti wt.% and Ag–26.7Cu–4.5Ti wt.% alloys have been sandwiched between pieces of R-plane orientated sapphire and heated in argon to temperatures between 750 and 900 °C for 1 min. The phases at the Ag–Cu–Ti/sapphire interfaces have been studied using selected area electron diffraction, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Gradual and subtle changes at the Ag–Cu–Ti/sapphire interfaces were observed as a function of temperature, along with the formation of a transient phase that permitted wetting of the sapphire. Unequivocal evidence is shown that when the active braze alloys melt, titanium first migrates to the sapphire and reacts to dissolve up to ∼33 at.% oxygen, forming a nanometre-size polycrystalline layer with a chemical composition of Ti 2 O 1–x (x ≪ 1). Ti 3 Cu 3 O particles subsequently nucleate behind the Ti 2 O 1–x layer and grow to become a continuous micrometre-size layer, replacing the Ti 2 O 1–x layer. Finally at 845 °C, a nanometre-size γ-TiO layer forms on the sapphire to leave a typical interfacial structure of Ag–Cu/Ti 3 Cu 3 O/γ-TiO/sapphire consistent with that seen in samples of polycrystalline alumina joined to itself with these active braze alloys. These experimental observations have been used to establish a definitive bonding mechanism for the joining of sapphire with Ag–Cu alloys activated by small amounts of titanium.

  16. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  17. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    International Nuclear Information System (INIS)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-01-01

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  18. Zinc and gastrointestinal disease

    Institute of Scientific and Technical Information of China (English)

    Sonja; Skrovanek; Katherine; DiGuilio; Robert; Bailey; William; Huntington; Ryan; Urbas; Barani; Mayilvaganan; Giancarlo; Mercogliano; James; M; Mullin

    2014-01-01

    This review is a current summary of the role that both zinc deficiency and zinc supplementation can play in the etiology and therapy of a wide range of gastrointestinal diseases. The recent literature describing zinc action on gastrointestinal epithelial tight junctions and epithelial barrier function is described. Zinc enhancement of gastrointestinal epithelial barrier function may figure prominently in its potential therapeutic action in several gastrointestinal diseases.

  19. Singlet and triplet states of trions in Zinc Selenide-based quantum wells probed by magnetic fields to 50 Tesla

    International Nuclear Information System (INIS)

    Astakhov, G.V.; Yakovlev, D.R.; Crooker, Scott A.; Barrick, Todd; Dzyubenko, A.B.; Sander, Thomas; Kochereshko, V.P.; Ossau, W.; Faschinger, W.; Waag, A.

    2002-01-01

    Singlet and triplet states of positively (X + ) and negatively (X - ) charged excitons in ZnSe-based quantum wells have been studied by means of photoluminescence in pulsed magnetic fields up to 50 T. The binding energy of the X - singlet state shows a monotonic increase with magnetic field with a tendency to saturation, while that of the X + slightly decreases. The triplet X + and X - states, being unbound at zero magnetic field, noticeably increase their binding energy in high magnetic fields. The experimental evidence for the interaction between the triplet and singlet states of lTions leading to their anticrossing in magnetic fields has been found.

  20. Properties of zinc selenide grown by chemical vapor transport and its application to room-temperature radiation detection

    International Nuclear Information System (INIS)

    Brunett, B.A.; Toney, J.E.; Schlesinger, T.E.; Yoon, H.; Goorsky, M.S.; Rudolph, P.

    1998-01-01

    The authors have characterized ZnSe material grown by chemical vapor transport in iodine using triple-axis X-ray diffraction (TAD), photo-induced current transient spectroscopy (PICTS), photoluminescence (PL), current-voltage measurements and gamma-ray spectroscopy. The material was found to have inadequate carrier transport for nuclear spectrometer use, but there was a discernible difference in performance between crystals which could be correlated with crystallinity as determined by the TAD rocking curves

  1. Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

    Science.gov (United States)

    Maskell, P.; Oram, L.

    The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

  2. Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

    International Nuclear Information System (INIS)

    Rodriguez-Lazcano, Y.; Pena, Yolanda; Nair, M.T.S.; Nair, P.K.

    2005-01-01

    We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb 2 Se 3 . Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10 -8 (Ω cm) -1 and photoconductivity, about 10 -6 (Ω cm) -1 under tungsten halogen lamp illumination with intensity of 700 W m -2 . An estimate for the mobility life time product for the film is 4 x 10 -9 cm 2 V -1

  3. Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides.

    Science.gov (United States)

    Rhyee, Jong-Soo; Kim, Jin Hee

    2015-03-20

    Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In₄Se₃ - δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In₄Se₃ - δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In₄Se₃ - δ Cl 0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n -type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.

  4. Compatibility of Pt-3008 with selected components of the selenide isotope generator system

    International Nuclear Information System (INIS)

    Keiser, J.R.

    1979-04-01

    The first in a new generation of radioisotopic thermoelectric generators being built by Teledyne Energy Systems and designated the Selenide Isotope Generator has thermoelectric materials that can be degraded by reaction with O 2 , H 2 O, CO, and other gases. Consequently, for at least the first ground demonstration system a protective xenon atmosphere will be maintained over the thermoelectrics. The high-temperature portion of the atmosphere-retaining structure will be fabricated from the alloy Pt-3008 (Pt--30 wt % Rh--8 wt % W), which was developed at Oak Ridge National Laboratory. For this application Pt-3008 must be compatible with the various insulations and thermoelectric materials. A study of the compatibility of Pt-3008 with these materials and showed that Pt-3008 was embrittled after exposure to some of the insulations that were not adequately outgassed and by one of the thermoelectric materials (Cu 2 Se) in some of the isothermal tests. It is believed that Pt-3008 will be compatible with the Selenide Isotope Generator materials when they are well outgassed and under the temperature gradient conditions of the operating system

  5. Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

    Directory of Open Access Journals (Sweden)

    Jong-Soo Rhyee

    2015-03-01

    Full Text Available Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In4Se3−δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In4Se3−δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In4Se3−δCl0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n-type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.

  6. Two-step synthesis of silver selenide semiconductor with a linear magnetoresistance effect

    International Nuclear Information System (INIS)

    Yang, Fengxia; Xiong, Shuangtao; Liu, Fengxian; Han, Chong; Zhang, Duanming; Xia, Zhengcai

    2012-01-01

    A two-step synthesis method for polycrystalline β-silver selenide (β-Ag 2 Se) was developed. In the first step, nanopowder was prepared using a chemical conversion method at room temperature. In the second step, the nanopowder was compressed and then the bulk Ag 2 Se was fabricated by the solid-state sintering process. The crystalline phase and morphology were examined. The results showed that β-Ag 2 Se was fast fabricated at room temperature. The dense polycrystalline Ag-rich Ag 2 Se was synthesized successfully at 450 °C for 0.5 h under Argon flow. For the polycrystalline, the electronic properties and transverse magnetoresistance (TMR) in a pulsed magnetic field were investigated. The samples displayed n-type semiconducting behaviors and a critical temperature with a broaden temperature range of 140–150 K. Also, it presented a positive and nearly linear dependence on magnetic field H at H ≥ H c (crossover field) ranging from 2 to 20 T. Moreover, the linear dependence of TMR at strong field was non-saturating up to 35 T. Combining with the observation of morphology, it is thought that this unusual TMR effect was caused by slightly excess Ag. This new synthesis method provided a potential route to synthesize nonstoichiometric silver selenide. (paper)

  7. Asymmetric supercapacitors with metal-like ternary selenides and porous graphene electrodes

    KAUST Repository

    Xia, Chuan

    2016-04-14

    Asymmetric supercapacitors provide a promising approach to fabricate capacitive energy storage devices with high energy and power densities. In this work, asymmetric supercapacitors with excellent performance have been fabricated using ternary (Ni, Co)0.85Se on carbon fabric as bind-free positive electrode and porous free-standing graphene films as negative electrode. Owing to their metal-like conductivity (~1.67×106 S m−1), significant electrochemical activity, and superhydrophilic nature, our nanostructured ternary nickel cobalt selenides result in a much higher areal capacitance (2.33 F cm−2 at 4 mA cm−2), better rate performance and cycling stability than their binary selenide equivalents, and other ternary oxides and chalcogenides. Those hybrid supercapacitors can afford impressive areal capacitance and stack capacitance of 529.3 mF cm−2 and 6330 mF cm−3 at 1 mA cm−2, respectively. More impressively, our optimized asymmetric device operating at 1.8 V delivers a very high stack energy density of 2.85 mWh cm−3 at a stack power density of 10.76 mW cm−3, as well as 85% capacitance retention after 10,000 continuous charge-discharge cycles. Even at a high stack power density of 1173 mW cm−3, this device still deliveries a stack energy density of 1.19 mWh cm−3, superior to most of the reported supercapacitors.

  8. Zinc in human serum

    International Nuclear Information System (INIS)

    Kiilerich, S.

    1987-01-01

    The zinc ion is essential for the living organism. Many pathological conditions have been described as a consequence of zinc deficiency. As zinc constitutes less than 0.01 per cent of the body weight, it conventionally belongs to the group of trace elements. The method of atomic absorption spectrophotometry is used to measure the concentration of zinc in serum and urine from healthy persons. The assumptions of the method is discussed. The importance of proteinbinding, diet and the diurnal variation of serum zinc concentration is presented. Serum versus plasma zinc concentration is discussed. Reference serum zinc values from 104 normal subjects are given. Zinc in serum is almost entirely bound to proteins. A preliminary model for the estimation of the distribution of zinc between serum albumin and α 2 -macroglobulin is set up. This estimate has been examined by an ultracentrufugation method. The binding of zinc to a α 2 -macroglobulin in normal persons is appoximately 7 per cent, in patients with cirrhosis of the liver of alcoholic origin approximately 6 per cent, in patients with insulin dependent diabetes mellitus approximately 5 per cent, and in patients with chronic renal failure approximately 2 per cent. It is concluded, therefore, that for clinical purposes it is sufficient to use the concentration of total serum zinc corrected for the concentration of serum albumin. (author)

  9. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    . However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

  10. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Transition metal oxide nanopowder and ionic liquid: an efficient system for the synthesis of diorganyl selenides, selenocysteine and derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Narayanaperumal, Senthil; Gul, Kashif; Kawasoko, Cristiane Y.; Singh, Devender; Dornelles, Luciano; Rodrigues, Oscar E.D. [Universidade Federal de Santa Maria (UFSC), RS (Brazil). Dept. de Quimica. LabSelen-NanoBio; Braga, Antonio L. [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil). Dept. de Quimica. LabSelen

    2010-07-01

    We have developed an efficient method for the synthesis of diorganyl selenides and {beta}-seleno amines using Zn, catalytic amounts of ZnO nanopowder, as a catalyst and ionic liquid as a recyclable solvent. This ZnO/ionic liquid system shows high efficiency in catalyzing these transformations with the formation of the desired products in high yields. (author)

  12. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-01-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  13. Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

    Science.gov (United States)

    Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

    2018-03-01

    The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

  14. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    International Nuclear Information System (INIS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-01-01

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  15. Order in nanometer thick intergranular films at Au-sapphire interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2011-08-15

    Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

  16. Towards a systematic assessment of errors in diffusion Monte Carlo calculations of semiconductors: Case study of zinc selenide and zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jaehyung [Department of Mechanical Science and Engineering, 1206 W Green Street, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Ertekin, Elif, E-mail: ertekin@illinois.edu [Department of Mechanical Science and Engineering, 1206 W Green Street, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); International Institute for Carbon Neutral Energy Research - WPI-I" 2CNER, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395 (Japan)

    2015-12-14

    The fixed node diffusion Monte Carlo (DMC) method has attracted interest in recent years as a way to calculate properties of solid materials with high accuracy. However, the framework for the calculation of properties such as total energies, atomization energies, and excited state energies is not yet fully established. Several outstanding questions remain as to the effect of pseudopotentials, the magnitude of the fixed node error, and the size of supercell finite size effects. Here, we consider in detail the semiconductors ZnSe and ZnO and carry out systematic studies to assess the magnitude of the energy differences arising from controlled and uncontrolled approximations in DMC. The former include time step errors and supercell finite size effects for ground and optically excited states, and the latter include pseudopotentials, the pseudopotential localization approximation, and the fixed node approximation. We find that for these compounds, the errors can be controlled to good precision using modern computational resources and that quantum Monte Carlo calculations using Dirac-Fock pseudopotentials can offer good estimates of both cohesive energy and the gap of these systems. We do however observe differences in calculated optical gaps that arise when different pseudopotentials are used.

  17. Molecular dynamics simulation of electron trapping in the sapphire lattice

    International Nuclear Information System (INIS)

    Rambaut, C.; Oh, K.H.; Fayeulle, S.; Kohanoff, J.

    1995-10-01

    Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge mode. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (α -Al 2 O 3 ) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5 A. Detrapping is observed at 250 K. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature. (author). 18 refs, 7 figs, 2 tabs

  18. Synthesis of single-crystalline Al layers in sapphire

    International Nuclear Information System (INIS)

    Schlosser, W.; Lindner, J.K.N.; Zeitler, M.; Stritzker, B.

    1999-01-01

    Single-crystalline, buried aluminium layers were synthesized by 180 keV high-dose Al + ion implantation into sapphire at 500 deg. C. The approximately 70 nm thick Al layers exhibit in XTEM investigations locally abrupt interfaces to the single-crystalline Al 2 O 3 top layer and bulk, while thickness and depth position are subjected to variations. The layers grow by a ripening process of oriented Al precipitates, which at low doses exist at two different orientations. With increasing dose, precipitates with one out of the two orientations are observed to exist preferentially, finally leading to the formation of a single-crystalline layer. Al outdiffusion to the surface and the formation of spherical Al clusters at the surface are found to be competing processes to buried layer formation. The formation of Al layers is described by Rutherford Backscattering Spectroscopy (RBS), Cross-section transmission electron microscopy (XTEM) and Scanning electron microscopy (SEM) studies as a function of dose, temperature and substrate orientation

  19. Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

    International Nuclear Information System (INIS)

    Zeng, Yong; Zhao, Yan; Jiang, Yijian

    2015-01-01

    Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

  20. Growth and Low Temperature Transport Measurements of Pure and Doped Bismuth Selenide

    DEFF Research Database (Denmark)

    Mlack, Jerome Thomas

    Se3, which is a strong spin orbit material and a topological insulator. I describe a synthesis technique and low-temperature transport measurements of nanostructures of Bi2Se3, that when annealed with palladium show evidence of superconductivity. The growth method is a catalyst-free atmospheric...... with palladium via annealing, the transport properties of the samples can be altered to exhibit superconductivity. Thin films of palladium are deposited on prefabricated Bi2Se3 nanodevices and annealed at temperatures in excess of 100 Celsius. We find that Bi2Se3 absorbs Pd under these conditions...... pressure vapor-solid growth. The growth method yields a variety of nanostructures, and materials analysis shows ordered structures of bismuth selenide in all cases. Low-temperature measurements of as-grown nanostructures indicate tunable carrier density in all samples. By doping the nanostructures...

  1. Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide

    Energy Technology Data Exchange (ETDEWEB)

    Marchenko, A. V. [Herzen State Pedagogical University of Russia (Russian Federation); Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Egorova, A. Yu. [St.-Petersburg Mining University (Russian Federation); Kiselev, V. S.; Seregin, P. P., E-mail: ppseregin@mail.ru [Herzen State Pedagogical University of Russia (Russian Federation)

    2017-04-15

    Impurity iron atoms in vitreous arsenic-selenide As{sub 2}Se{sub 3} films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of ≥3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.

  2. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    International Nuclear Information System (INIS)

    Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

    2014-01-01

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ∼1.78eV with high absorption coefficient ∼10 6 /m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ∼2.6Ωm and the films showed good photo response

  3. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    Science.gov (United States)

    Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

    2014-01-01

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

  4. Photo-induced cooperative covalent-bond switching in amorphous arsenic selenide

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Balitska, V [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Filipecki, J [Institute of Physics of Jan Dlugosz University, 13/15, Al. Armii Krajowej, Czestochowa, PL-42201 (Poland)

    2005-01-01

    A microstructural mechanism of photoinduced transformations in amorphous arsenic selenide films was studied with IR Fourier-spectroscopy technique in 300-100 cm{sup -1} region. It was shown that stage of irreversible photostructural changes was connected with cooperative process of coordination defect formation accompanied by homopolar chemical bonds switching in heteropolar ones. On the contrary, reversible photoinduced effects were caused by heteropolar chemical bonds switching in homopolar ones, as well as additional channel of bridge heteropolar bonds switching in short-layer ones. The both processes were associated with formation of anomalously coordinated defect pairs and accompanying atomic displacements at the level of medium-range ordering. The developed mathematical simulation procedure testified in a favour of defect-related origin of the reversible photo-thermallyinduced transformations, since their kinetics corresponded to known stretched-exponential dependence, tending to bimolecular behaviour rather then to single-exponential one.

  5. Radiation-induced physical ageing in network arsenic-sulfide/selenide glasses

    International Nuclear Information System (INIS)

    Shpotyuk, M; Golovchak, R; Kozdras, A; Shpotyuk, O

    2010-01-01

    Effect of radiation-induced physical ageing is investigated by differential scanning calorimetry method in As x Se 100-x (10 ≤ x ≤ 42) and As x S 100-x (30 ≤ x ≤ 42) glasses. Obtained results are compared with conventional physical ageing at normal conditions. Significant radiation-induced physical ageing is recorded for glassy As x S 100-x within 30 ≤ x x Se 100-x glasses from the same compositional interval do not show any measurable changes in DSC curves after γ-irradiation. Observed difference in radiation-induced physical ageing in arsenic-sulfide/selenide glasses is explained by a greater lifetime of γ-induced excitations within sulfur-based network in comparison with selenium-based one.

  6. Radiation-induced physical ageing in network arsenic-sulfide/selenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M; Golovchak, R; Kozdras, A; Shpotyuk, O, E-mail: shpotyuk@novas.lviv.ua

    2010-11-15

    Effect of radiation-induced physical ageing is investigated by differential scanning calorimetry method in As{sub x}Se{sub 100-x} (10 {<=} x {<=} 42) and As{sub x}S{sub 100-x} (30 {<=} x {<=} 42) glasses. Obtained results are compared with conventional physical ageing at normal conditions. Significant radiation-induced physical ageing is recorded for glassy As{sub x}S{sub 100-x} within 30 {<=} x < 40 range, while As{sub x}Se{sub 100-x} glasses from the same compositional interval do not show any measurable changes in DSC curves after {gamma}-irradiation. Observed difference in radiation-induced physical ageing in arsenic-sulfide/selenide glasses is explained by a greater lifetime of {gamma}-induced excitations within sulfur-based network in comparison with selenium-based one.

  7. Control of accidental releases of hydrogen selenide in vented storage cabinets

    Science.gov (United States)

    Fthenakis, V. M.; Moskowitz, P. D.; Sproull, R. D.

    1988-07-01

    Highly toxic hydrogen selenide and hydrogen sulfide gases are used in the production of copper-indium-diselenide photovoltaic cells by reactive sputtering. In the event of an accident, these gases may be released to the atmosphere and pose hazards to public and occupational safety and health. This paper outlines an approach for designing systems for the control of these releases given the uncertainty in release conditions and lack of data on the chemical systems involved. Accidental releases of these gases in storage cabinets can be controlled by either a venturi and packed-bed scrubber and carbon adsorption bed, or containment scrubbing equipment followed by carbon adsorption. These systems can effectively reduce toxic gas emissions to levels needed to protect public health. The costs of these controls (˜0.012/Wp) are samll in comparison with current (˜6/Wp) and projected (˜I/Wp) production costs.

  8. The role of isomorphous substitutions in natural selenides belonging to the pyrite group

    International Nuclear Information System (INIS)

    Bindi, Luca; Cipriani, Curzio; Pratesi, Giovanni; Trosti-Ferroni, Renza

    2008-01-01

    The present paper reports chemical and structural data of selenide minerals belonging to the pyrite group. Eighteen samples of minerals in this group with variable chemical composition (7 samples of penroseite, NiSe 2 ; 10 samples of krutaite, CuSe 2 ; 1 sample of trogtalite, CoSe 2 ) were studied by means of X-ray single-crystal diffraction and electron microprobe. On the basis of information gained from the chemical characterization, we can conclude that a complete solid solution between NiSe 2 and CuSe 2 exists in nature with the absence of pure end-members. Although verified only for the Ni-rich members, we also infer a solid solution between NiSe 2 and CoSe 2 . The unit-cell parameters were modeled using a multiple regression method as a function of the Co, Ni, and Cu contents

  9. The role of isomorphous substitutions in natural selenides belonging to the pyrite group

    Energy Technology Data Exchange (ETDEWEB)

    Bindi, Luca [Museo di Storia Naturale, sez. di Mineralogia e Litologia, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy)], E-mail: luca.bindi@unifi.it; Cipriani, Curzio [Museo di Storia Naturale, sez. di Mineralogia e Litologia, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Pratesi, Giovanni [Museo di Storia Naturale, sez. di Mineralogia e Litologia, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Dipartimento di Scienze della Terra, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Trosti-Ferroni, Renza [Dipartimento di Scienze della Terra, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy)

    2008-07-14

    The present paper reports chemical and structural data of selenide minerals belonging to the pyrite group. Eighteen samples of minerals in this group with variable chemical composition (7 samples of penroseite, NiSe{sub 2}; 10 samples of krutaite, CuSe{sub 2}; 1 sample of trogtalite, CoSe{sub 2}) were studied by means of X-ray single-crystal diffraction and electron microprobe. On the basis of information gained from the chemical characterization, we can conclude that a complete solid solution between NiSe{sub 2} and CuSe{sub 2} exists in nature with the absence of pure end-members. Although verified only for the Ni-rich members, we also infer a solid solution between NiSe{sub 2} and CoSe{sub 2}. The unit-cell parameters were modeled using a multiple regression method as a function of the Co, Ni, and Cu contents.

  10. Density functional theory study of inter-layer coupling in bulk tin selenide

    Science.gov (United States)

    Song, Hong-Yue; Lü, Jing-Tao

    2018-03-01

    We study the inter-layer coupling in bulk tin selenide (SnSe) through density functional theory based calculations. Different approximations for the exchange-correlation functionals and the van der Waals interaction are employed. By performing comparison with graphite, MoS2 and black phosphorus, we analyze the inter-layer coupling from different points of view, including the binding energy, the low frequency inter-layer optical phonons, and the inter-layer charge transfer. We find that, there is a strong charge transfer between layers of SnSe, resulting in the strongest inter-layer coupling. Moreover, the charge transfer renders the inter-layer coupling in SnSe not of van der Waals type. Mechanical exfoliation has been used to fabricate mono- or few-layer graphene, MoS2 and black phosphorus. But, our results show that it may be difficult to apply similar technique to SnSe.

  11. Short-range order in amorphous thin films of indium selenides

    International Nuclear Information System (INIS)

    Zakharov, V.P.; Poltavtsev, Yu.G.; Sheremet, G.P.

    1982-01-01

    A structure of the short-range order and a character of interatomic interactions in indium selenides Insub(1-x)Sesub(x) with 0.333 <= x <= 0.75, obtained in the form of amorphous films 0.05-0.80 μm thick are studied using electron diffraction method. It is found out that mostly tetrahedrical coordination of nearest neighbours in the vicinity of indium atoms is characteristic for studied amorphous films, and coordination of selenium atoms is different. Amorphous film with x=0.75 posesses a considereably microheterogeneous structure of the short-range order, which is characterized by the presence of microunclusions of amorphous selenium and atoms of indium, octohedrically coordinated by selenium atoms

  12. Lead Selenide Nanostructures Self-Assembled across Multiple Length Scales and Dimensions

    Directory of Open Access Journals (Sweden)

    Evan K. Wujcik

    2016-01-01

    Full Text Available A self-assembly approach to lead selenide (PbSe structures that have organized across multiple length scales and multiple dimensions has been achieved. These structures consist of angstrom-scale 0D PbSe crystals, synthesized via a hot solution process, which have stacked into 1D nanorods via aligned dipoles. These 1D nanorods have arranged into nanoscale 2D sheets via directional short-ranged attraction. The nanoscale 2D sheets then further aligned into larger 2D microscale planes. In this study, the authors have characterized the PbSe structures via normal and cryo-TEM and EDX showing that this multiscale multidimensional self-assembled alignment is not due to drying effects. These PbSe structures hold promise for applications in advanced materials—particularly electronic technologies, where alignment can aid in device performance.

  13. Improved microstructure and thermoelectric properties of iodine doped indium selenide as a function of sintering temperature

    Science.gov (United States)

    Dhama, Pallavi; Kumar, Aparabal; Banerji, P.

    2018-04-01

    In this paper, we explored the effect of sintering temperature on the microstructure, thermal and electrical properties of iodine doped indium selenide in the temperature range 300 - 700 K. Samples were prepared by a collaborative process of vacuum melting, ball milling and spark plasma sintering at 570 K, 630 K and 690 K. Single phase samples were obtained at higher sintering temperature as InSe is stable only at lower temperature. With increasing sintering temperature, densities of the samples were found to improve with larger grain size formation. Negative values of Seebeck coefficient were observed which indicates n-type carrier transport. Seebeck coefficient increases with sintering temperature and found to be the highest for the sample sintered at 690 K. Thermal conductivity found to be lower in the samples sintered at lower temperatures. The maximum thermoelectric figure of merit found to be ˜ 1 at 700 K due to the enhanced power factor as a result of improved microstructure.

  14. Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts

    Science.gov (United States)

    Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

    2013-09-01

    Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se

  15. Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

    Directory of Open Access Journals (Sweden)

    Swapnil Sourav

    2016-01-01

    Full Text Available Phase transform properties of Indium Selenide (In2Se3 based Random Access Memory (RAM have been explored in this paper. Phase change random access memory (PCRAM is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3 material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported model has been also validated to act as a memory cell by associating it with a read/write circuit proposed in this work. Simulation results demonstrate impressive retentivity and low power consumption by requiring a set pulse of 208 μA for a duration of 100 μs to set the PCRAM in crystalline state. Similarly, a reset pulse of 11.7 μA for a duration of 20 ns can set the PCRAM in amorphous state. Modeling of In2Se3 based PCRAM has been done in Verilog-A and simulation results have been extensively verified using SPICE simulator.

  16. Chelators for investigating zinc metalloneurochemistry

    OpenAIRE

    Radford, Robert John; Lippard, Stephen J.

    2013-01-01

    The physiology and pathology of mobile zinc signaling has become an important topic in metalloneurochemistry. To study the action of mobile zinc effectively, specialized tools are required that probe the temporal and positional changes of zinc ions within live tissue and cells. In the present article we describe the design and implementation of selective zinc chelators as antagonists to interrogate the function of mobile zinc, with an emphasis on the pools of vesicular zinc in the terminals o...

  17. Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Nam, Giwoong; Kim, Soaram [Department of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Kim, Do Yeob [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Lee, Dong-Yul [LED R and D team, Samsung Electronics Co. Ltd., Yongin 446-711 (Korea, Republic of); Kim, Jin Soo [Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju, Chonbuk 561-756 (Korea, Republic of); Kim, Sung-O [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Kim, Jong Su [Department of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749 (Korea, Republic of); Son, Jeong-Sik [Department of Visual Optics, Kyungwoon University, Gumi, Gyeongsangbuk-do 730-850 (Korea, Republic of); Leem, Jae-Young, E-mail: jyleem@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of)

    2012-10-15

    Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol-gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were {alpha}=4 Multiplication-Sign 10{sup -3} eV/K and {beta}=4.9 Multiplication-Sign 10{sup 3} K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission. - Highlights: Black-Right-Pointing-Pointer ZnO thin films on R-plane sapphire substrates were grown by sol-gel method. Black-Right-Pointing-Pointer Two emission peaks at 3.338 and 3.279 eV were observed at 300 K Black-Right-Pointing-Pointer Activation energies of the two peaks were 39.3 and 28.9 meV,respectively. Black-Right-Pointing-Pointer Exciton radiative lifetime of the two peaks increased with increasing temperature.

  18. Zinc triggers microglial activation.

    Science.gov (United States)

    Kauppinen, Tiina M; Higashi, Youichirou; Suh, Sang Won; Escartin, Carole; Nagasawa, Kazuki; Swanson, Raymond A

    2008-05-28

    Microglia are resident immune cells of the CNS. When stimulated by infection, tissue injury, or other signals, microglia assume an activated, "ameboid" morphology and release matrix metalloproteinases, reactive oxygen species, and other proinflammatory factors. This innate immune response augments host defenses, but it can also contribute to neuronal death. Zinc is released by neurons under several conditions in which microglial activation occurs, and zinc chelators can reduce neuronal death in animal models of cerebral ischemia and neurodegenerative disorders. Here, we show that zinc directly triggers microglial activation. Microglia transfected with a nuclear factor-kappaB (NF-kappaB) reporter gene showed a severalfold increase in NF-kappaB activity in response to 30 microm zinc. Cultured mouse microglia exposed to 15-30 microm zinc increased nitric oxide production, increased F4/80 expression, altered cytokine expression, and assumed the activated morphology. Zinc-induced microglial activation was blocked by inhibiting NADPH oxidase, poly(ADP-ribose) polymerase-1 (PARP-1), or NF-kappaB activation. Zinc injected directly into mouse brain induced microglial activation in wild-type mice, but not in mice genetically lacking PARP-1 or NADPH oxidase activity. Endogenous zinc release, induced by cerebral ischemia-reperfusion, likewise induced a robust microglial reaction, and this reaction was suppressed by the zinc chelator CaEDTA. Together, these results suggest that extracellular zinc triggers microglial activation through the sequential activation of NADPH oxidase, PARP-1, and NF-kappaB. These findings identify a novel trigger for microglial activation and a previously unrecognized mechanism by which zinc may contribute to neurological disorders.

  19. Semipolar GaN grown on m-plane sapphire using MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

    2008-07-01

    We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  1. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  2. Use of sapphire as a neutron damage monitor for pressure vessel steels

    International Nuclear Information System (INIS)

    Pells, G.P.; Fudge, A.J.; Murphy, M.J.; Watt, S.

    1989-01-01

    Single crystal α-Al 2 O 3 (sapphire) has been neutron irradiated over a range of dose, dose rate and neutron energy spectra at temperatures from 60 to 310 0 C. Values of optical absorption at 400 nm, the peak of the aluminum vacancy absorption band, were plotted against damage dose expressed in terms of dpa of Al in sapphire obtained from measurements of induced radio-activity in activation foils irradiated with the sapphires and from calculation of the neutron energy spectrum at the irradiation position. The neutron energy spectrum was calculated using modern neutron transport computer codes and adjusted in the light of measurements obtained from multiple foil activation experiments. A simple response curve was obtained for all sapphires irradiated at temperatures between 220 to 310 0 C and for sapphires irradiated below 200 0 C which had been annealed at 290 0 C irrespective of dose rate or neutron beam energy spectrum. The single response curve for irradiations performed in a variety of neutron energy spectra validate the neutron energy spectrum computational procedures

  3. The digital structural analysis of cadmium selenide crystals by a method of ion beam thinning for high resolution electron microscopy

    International Nuclear Information System (INIS)

    Kanaya, Koichi; Baba, Norio; Naka, Michiaki; Kitagawa, Yukihisa; Suzuki, Kunio

    1986-01-01

    A digital processing method using a scanning densitometer system for structural analysis of electron micrographs was successfully applied to a study of cadmium selenide crystals, which were prepared by an argon-ion beam thinning method. Based on Fourier techniques for structural analysis from a computer-generated diffractogram, it was demonstrated that when cadmium selenide crystals were sufficiently thin to display the higher order diffraction spots at a high resolution approaching the atomic level, they constitute an alternative hexagonal lattice of imperfect wurtzite phase from a superposition of individual harmonic images by the enhanced scattering amplitude and corrected phase. From the structural analysis data, a Fourier synthetic lattice image was reconstructed, representing the precise location and three-dimensional arrangement of each of the atoms in the unit cell. Extensively enhanced lattice defect images of dislocations and stacking faults were also derived and shown graphically. (author)

  4. Fluorescence imaging technology (FI) for high-throughput screening of selenide-modified nano-TiO2 catalysts.

    Science.gov (United States)

    Wang, Liping; Lee, Jianchao; Zhang, Meijuan; Duan, Qiannan; Zhang, Jiarui; Qi, Hailang

    2016-02-18

    A high-throughput screening (HTS) method based on fluorescence imaging (FI) was implemented to evaluate the catalytic performance of selenide-modified nano-TiO2. Chemical ink-jet printing (IJP) technology was reformed to fabricate a catalyst library comprising 1405 (Ni(a)Cu(b)Cd(c)Ce(d)In(e)Y(f))Se(x)/TiO2 (M6Se/Ti) composite photocatalysts. Nineteen M6Se/Tis were screened out from the 1405 candidates efficiently.

  5. Synthesis, structure, and thermal properties of soluble hydrazinium germanium(IV) and tin(IV) selenide salts.

    Science.gov (United States)

    Mitzi, David B

    2005-05-16

    The crystal structures of two hydrazinium-based germanium(IV) and tin(IV) selenide salts are determined. (N(2)H(5))(4)Ge(2)Se(6) (1) [I4(1)cd, a = 12.708(1) Angstroms, c = 21.955(2) Angstroms, Z = 8] and (N(2)H(4))(3)(N(2)H(5))(4)Sn(2)Se(6) (2) [P, a = 6.6475(6) Angstroms, b = 9.5474(9) Angstroms, c = 9.8830(10) Angstroms, alpha = 94.110(2) degrees, beta = 99.429(2) degrees, gamma = 104.141(2) degrees, Z = 1] each consist of anionic dimers of edge-sharing metal selenide tetrahedra, M(2)Se(6)(4-) (M = Ge or Sn), separated by hydrazinium cations and, for 2, additional neutral hydrazine molecules. Substantial hydrogen bonding exists among the hydrazine/hydrazinium molecules as well as between the hydrazinium cations and the selenide anions. Whereas the previously reported tin(IV) sulfide system, (N(2)H(5))(4)Sn(2)S(6), decomposes cleanly to microcrystalline SnS(2) when heated to 200 degrees C in an inert atmosphere, higher temperatures (>300 degrees C) are required to dissociate selenium from 1 and 2 for the analogous preparations of single-phase metal selenides. The metal chalcogenide salts are highly soluble in hydrazine, as well as in a variety of amines and DMSO, highlighting the potential usefulness of these compounds as precursors for the solution deposition of the corresponding metal chalcogenide films.

  6. Study by vibration spectrometry of addition compounds of boron fluoride with some alkyl oxides, sulphides and selenides

    International Nuclear Information System (INIS)

    Le Calve, Jacques

    1966-01-01

    This research thesis reports the study of the vibration spectrum of some addition compounds of boron fluoride with alkyl oxides, sulphides and selenides. The objective was first the assignment of spectra, and then the study of the influence of the formation of a coordination bound on boron fluoride vibrations and on that of its donor. The author also tried to define correlations between spectrum and structures, and studied the effects of physical status and solvents [fr

  7. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2018-05-01

    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

  8. (211) oriented ZnTe growth on m-plane sapphire by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

    2013-11-15

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Contribution to the microwave characterisation of superconductive materials by means of sapphire resonators

    International Nuclear Information System (INIS)

    Hanus, Xavier

    1993-01-01

    The objective of this research thesis is to find a compact resonant structure which would allow the residual surface impedance of superconductive samples to be simply, quickly and economically characterised. The author first explains why he decided to use a sapphire single-crystal as inner dielectric, given some performance reached by resonant structures equipped with such inner dielectrics, and given constraints adopted from the start. He explains the origin of microwave losses which appear in this type of resonant structure, i.e. respectively the surface impedance as far as metallic losses are concerned, and the sapphire dielectric loss angle for as far as dielectric losses are concerned. The experimental installation and the principle of microwave measurements are described. The performance of different possible solutions of resonant structures from starting criteria is presented. The solution of the cavity-sapphire with a TE 011 resonant mode is derived [fr

  10. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  11. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  12. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  13. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

    DEFF Research Database (Denmark)

    König, Karsten; Andersen, Peter E.; Le, Tuan

    2015-01-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...... imaging capability using different biological samples, i.e. cell monolayers, corneal tissue, and human skin. With the novel laser, the realization of very compact Ti:sapphire-based systems for high-quality multiphoton imaging at a significantly size and weight compared to current systems will become...

  14. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  15. Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects

    Science.gov (United States)

    Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

    2018-02-01

    Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.

  16. Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

    International Nuclear Information System (INIS)

    Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

    2011-01-01

    Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

  17. Design of all solid state tunable single-mode Ti: sapphire laser for nuclear industry

    International Nuclear Information System (INIS)

    Lee, J.H.; Nam, S.M.; Lee, Y.J.; Lee, J.M.; Horn, Roland E.; Wendt, Klaus

    1999-01-01

    We designed a Ti:Sapphire laser pumped by a diode laser pumped solid state laser (DPSSL). The DPSSL was intra-cavity frequency doubled and it had 20 W output power. The Ti:Sapphire laser was designed for single longitudinal mode lasing. For single mode lasing, the laser used several solid etalons. We simulated temporal evolution of the laser pulse and single pass amplification rate of the photons in each modes from rate equations. From the result, we found that single mode lasing is viable in this cavity

  18. Zinc phosphate conversion coatings

    Science.gov (United States)

    Sugama, Toshifumi

    1997-01-01

    Zinc phosphate conversion coatings for producing metals which exhibit enhanced corrosion prevention characteristics are prepared by the addition of a transition-metal-compound promoter comprising a manganese, iron, cobalt, nickel, or copper compound and an electrolyte such as polyacrylic acid, polymethacrylic acid, polyitaconic acid and poly-L-glutamic acid to a phosphating solution. These coatings are further improved by the incorporation of Fe ions. Thermal treatment of zinc phosphate coatings to generate .alpha.-phase anhydrous zinc phosphate improves the corrosion prevention qualities of the resulting coated metal.

  19. Zinc fingers, zinc clusters, and zinc twists in DNA-binding protein domains

    International Nuclear Information System (INIS)

    Vallee, B.L.; Auld, D.S.; Coleman, J.E.

    1991-01-01

    The authors recognize three distinct motifs of DNA-binding zinc proteins: (i) zinc fingers, (ii) zinc clusters, and (iii) zinc twists. Until very recently, x-ray crystallographic or NMR three-dimensional structure analyses of DNA-binding zinc proteins have not been available to serve as standards of reference for the zinc binding sites of these families of proteins. Those of the DNA-binding domains of the fungal transcription factor GAL4 and the rat glucocorticoid receptor are the first to have been determined. Both proteins contain two zinc binding sites, and in both, cysteine residues are the sole zinc ligands. In GAL4, two zinc atoms are bound to six cysteine residues which form a zinc cluster akin to that of metallothionein; the distance between the two zinc atoms of GAL4 is ∼3.5 angstrom. In the glucocorticoid receptor, each zinc atom is bound to four cysteine residues; the interatomic zinc-zinc distance is ∼13 angstrom, and in this instance, a zinc twist is represented by a helical DNA recognition site located between the two zinc atoms. Zinc clusters and zinc twists are here recognized as two distinctive motifs in DNA-binding proteins containing multiple zinc atoms. For native zinc fingers, structural data do not exist as yet; consequently, the interatomic distances between zinc atoms are not known. As further structural data become available, the structural and functional significance of these different motifs in their binding to DNA and other proteins participating in the transmission of the genetic message will become apparent

  20. Zinc in diet

    Science.gov (United States)

    ... Effects Symptoms of zinc deficiency include: Frequent infections Hypogonadism in males Loss of hair Poor appetite Problems with the ... any medical emergency or for the diagnosis or treatment of any medical condition. A licensed physician should ...

  1. Phase-Engineered Type-II Multimetal-Selenide Heterostructures toward Low-Power Consumption, Flexible, Transparent, and Wide-Spectrum Photoresponse Photodetectors.

    Science.gov (United States)

    Chen, Yu-Ze; Wang, Sheng-Wen; Su, Teng-Yu; Lee, Shao-Hsin; Chen, Chia-Wei; Yang, Chen-Hua; Wang, Kuangye; Kuo, Hao-Chung; Chueh, Yu-Lun

    2018-05-01

    Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W -1 and an on/off current ratio of up to 10 2 . Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. "You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

    Science.gov (United States)

    Pappas, Christine

    2007-01-01

    Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

  3. Thermal healing of the sub-surface damage layer in sapphire

    International Nuclear Information System (INIS)

    Pinkas, Malki; Lotem, Haim; Golan, Yuval; Einav, Yeheskel; Golan, Roxana; Chakotay, Elad; Haim, Avivit; Sinai, Ela; Vaknin, Moshe; Hershkovitz, Yasmin; Horowitz, Atara

    2010-01-01

    The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

  4. Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

    International Nuclear Information System (INIS)

    Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

    2004-01-01

    Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

  5. Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

    Science.gov (United States)

    Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

    2012-05-21

    Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

  6. Secondary electron emission of sapphire tungsten molybdenum and titanium for Maxwellian incident electrons

    International Nuclear Information System (INIS)

    Saussez-Hublet, M.-C.; Harbour, P.J.

    1980-06-01

    The second electron emission coefficient of various materials, namely titanium, molybdenum, tungsten and sapphire, has been calculated for a Maxwellian energy distribution from data for a normally incident monoenergetic beam of primary electrons. The most significant difference from the monoenergetic case occurs at low energies. In addition the influence of the incident angle of the electrons is discussed. (author)

  7. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  8. Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

    Science.gov (United States)

    Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

    2017-09-01

    Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

  9. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  10. Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

    Science.gov (United States)

    Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

    2013-12-02

    We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

  11. Erbium medium temperature localised doping into lithium niobate and sapphire: A comparative study

    Czech Academy of Sciences Publication Activity Database

    Nekvindová, P.; Macková, Anna; Peřina, Vratislav; Červená, Jarmila; Čapek, P.; Schrofel, J.; Špirková, J.; Oswald, Jiří

    90-91, - (2003), s. 559-564 ISSN 1012-0394 Institutional research plan: CEZ:AV0Z1048901 Keywords : lithium niobate * sapphire * erbium Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.687, year: 2003

  12. Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

    International Nuclear Information System (INIS)

    Vetrov, V. N.; Ignatenkov, B. A.

    2013-01-01

    The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

  13. Field Effect Transistors Using Atomically Thin Layers of Copper Indium Selenide (CuInSe)

    Science.gov (United States)

    Patil, Prasanna; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel; Talapatra, Saikat

    We will report fabrication of field-effect transistors (FETs) using few-layers of Copper Indium Selenide (CuInSe) flakes exfoliated from crystals grown using chemical vapor transport technique. Our transport measurements indicate n-type FET with electron mobility µ ~ 3 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. Mobility can be further increased significantly when ionic liquid 1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) is used as top gate. Similarly subthreshold swing can be further improved from 103 V/dec to 0.55 V/dec by using ionic liquid as a top gate. We also found ON/OFF ratio of ~ 102 for both top and back gate. Comparison between ionic liquid top gate and SiO2 back gate will be presented and discussed. This work is supported by the U.S. Army Research Office through a MURI Grant # W911NF-11-1-0362.

  14. Synthesis and Characterization of Aqueous Lead Selenide Quantum Dots for Solar Cell Application

    Science.gov (United States)

    Albert, Ancy; Sreekala, C. O.; Prabhakaran, Malini

    2018-02-01

    High quality, colloidal lead selenide (PbSe) nanoparticles possessing cube shaped morphology have been successfully synthesized by organometallic synthesis method, using oleic acid (OA) as capping agent. The use of non-coordinating solvent, 1-Octadecene (ODE), during the synthesis results in good quality nanocrystals. Morphology analysis by transmission electron microscopy reveals that cube-shaped nanocrystals with a size range of 10 nm have been produced during the synthesis. The absorption and PL spectra analysis showed an emission peak at 675 nm when excited to a wavelength of 610 nm, further confirmed the formation of PbSe nanocrystals. The surface modification of this colloidal quantum dots was then carried out using L- cysteine ligand, to make them water soluble, for solar cell application. The J-V characteristics study of this PbSe quantum dots solar cell (PbSe QDSC) showed a little power conversion efficiency which intern it shows significant advance toward effective utilization of PbSe nanocrystals sensitized in solar cells.

  15. Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Vinay, E-mail: drvinaygupta@netscape.net [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India); Department of Physics, University of California, Santa Barbara, California 93106 (United States); Upreti, Tanvi; Chand, Suresh [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India)

    2013-12-16

    We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7′-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2,6-diyl) bis(6-fluoro-4-(5′-hexyl-[2,2′-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh{sub 2}){sub 2}: Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh{sub 2}){sub 2}: CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe::60:40 leads to a short circuit current density (J{sub sc}) = 5.45 mA/cm{sup 2}, open circuit voltage (V{sub oc}) = 0.727 V, and fill factor (FF) = 51%, and a power conversion efficiency = 2.02% at 100 mW/cm{sup 2} under AM1.5G illumination. The J{sub sc} and FF are sensitive to the ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe, which is a crucial factor for the device performance.

  16. Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

    International Nuclear Information System (INIS)

    Gupta, Vinay; Upreti, Tanvi; Chand, Suresh

    2013-01-01

    We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7′-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2,6-diyl) bis(6-fluoro-4-(5′-hexyl-[2,2′-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh 2 ) 2 : Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh 2 ) 2 : CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh 2 ) 2 :CdSe::60:40 leads to a short circuit current density (J sc ) = 5.45 mA/cm 2 , open circuit voltage (V oc ) = 0.727 V, and fill factor (FF) = 51%, and a power conversion efficiency = 2.02% at 100 mW/cm 2 under AM1.5G illumination. The J sc and FF are sensitive to the ratio of p-DTS(FBTTh 2 ) 2 :CdSe, which is a crucial factor for the device performance

  17. Synthesis of Co-Electrospun Lead Selenide Nanostructures within Anatase Titania Nanotubes for Advanced Photovoltaics

    Directory of Open Access Journals (Sweden)

    Evan K. Wujcik

    2015-06-01

    Full Text Available Inorganic nano-scale heterostructures have many advantages over hybrid organic-inorganic dye-sensitized solar cells (DSSC or Grätzel cells, including their resistance to photo-bleaching, thermal stability, large specific surface areas, and general robustness. This study presents a first-of-its-kind low-cost all-inorganic lead selenide-anatase titania (PbSe/TiO2 nanotube heterostructure material for photovoltaic applications. Herein, PbSe nanostructures have been co-electrospun within a hollow TiO2 nanotube with high connectivity for highly efficient charge carrier flow and electron-hole pair separation. This material has been characterized by transmission electron microscopy (TEM, electron diffraction, energy dispersive X-ray spectroscopy (EDX to show the morphology and material composition of the synthesized nanocomposite. Photovoltaic characterization has shown this newly synthesized proof-of-concept material can easily produce a photocurrent under solar illumination, and, with further refinement, could reveal a new direction in photovoltaic materials.

  18. Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

    Energy Technology Data Exchange (ETDEWEB)

    Bercegol, Adrien, E-mail: adrien.bercegol@polytechnique.edu; Chacko, Binoy; Klenk, Reiner; Lauermann, Iver; Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie, Albert Einstein Straße 15, 12489 Berlin (Germany); Liero, Matthias [Weierstraß-Institut für Angewandte Analysis und Stochastik, 10117 Berlin (Germany)

    2016-04-21

    For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conduction band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.

  19. Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

    Science.gov (United States)

    Choudhary, Ritika; Chauhan, Rishi Pal

    2017-07-01

    The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

  20. The effect of annealing on structural, optical and photosensitive properties of electrodeposited cadmium selenide thin films

    Directory of Open Access Journals (Sweden)

    Somnath Mahato

    2017-06-01

    Full Text Available Cadmium selenide (CdSe thin films have been deposited on indium tin oxide coated glass substrate by simple electrodeposition method. X-ray Diffraction (XRD studies identify that the as-deposited CdSe films are highly oriented to [002] direction and they belong to nanocrystalline hexagonal phase. The films are changed to polycrystalline structure after annealing in air for temperatures up to 450 °C and begin to degrade afterwards with the occurrence of oxidation and porosity. CdSe completely ceases to exist at higher annealing temperatures. CdSe films exhibit a maximum absorbance in the violet to blue-green region of an optical spectrum. The absorbance increases while the band gap decreases with increasing annealing temperature. Surface morphology also shows that the increase of the annealing temperature caused the grain growth. In addition, a number of distinct crystals is formed on top of the film surface. Electrical characteristics show that the films are photosensitive with a maximum sensitivity at 350 °C.

  1. Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics

    KAUST Repository

    Yuan, Zhongcheng

    2015-11-01

    Abstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.

  2. The bioavailability of four zinc oxide sources and zinc sulphate in broiler chickens

    OpenAIRE

    Veldkamp, T.; Diepen, van, J.T.M.; Bikker, P.

    2014-01-01

    Zinc is an essential trace element for all farm animal species. It is commonly included in animal diets as zinc oxide, zinc sulphate or organically bound zinc. Umicore Zinc Chemicals developed zinc oxide products with different mean particle sizes. Umicore Zinc Chemicals requested Wageningen UR Livestock Research to determine the bioavailability of four zinc oxide sources and zinc sulphate in broiler chickens. A precise estimate of the bioavailability of zinc sources is required both for fulf...

  3. Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

    Directory of Open Access Journals (Sweden)

    Dimitra N. Papadimitriou

    2016-11-01

    Full Text Available High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO were successively electrodeposited in the form of columnar structures preferentially oriented along the ( 10 1 ¯ 1 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO32 at negative electrochemical potential of EC = (−0.8–(−1.2 V and moderate temperature of 80 °C on gallium rich (30% Ga chalcopyrite selenide Cu(In,GaSe2 (CIGS with chemically deposited ZnSe buffer (ZnSe/Cu(In,GaSe2/Mo/glass. The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ ~10−5 Ω·cm; the respective carrier concentration of the order 1022 cm−3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N2 flux regulation. The hydrostatic compressive strain due to Al3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl3 dopant was εh = −0.046 and the respective stress σh = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180–900 nm and the (optical band gap of Eg = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD Al:ZnO bilayers.

  4. Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States)

    2017-12-15

    The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

  5. Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

    International Nuclear Information System (INIS)

    Yi, Jong Hoon; Horn, Roland; Wendt, K.

    2001-01-01

    We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

  6. Relationship between maternal serum zinc, cord blood zinc and ...

    African Journals Online (AJOL)

    Background: Adequate in utero supply of zinc is essential for optimal fetal growth because of the role of zinc in cellular division, growth and differentiation. Low maternal serum zinc has been reported to be associated with low birth weight and the later is associated with increased morbidity and mortality in newborns.

  7. The study and microstructure analysis of zinc and zinc oxide

    Czech Academy of Sciences Publication Activity Database

    Luptáková, Natália; Pešlová, F.; Kliber, J.

    2015-01-01

    Roč. 54, č. 1 (2015), s. 43-46 ISSN 0543-5846 Grant - others:KEGA(SK) KEGA 007 TnUAD-4/2013 Institutional support: RVO:68081723 Keywords : zinc * production of zinc oxide * microstructure * chemical composition * zinc slag Subject RIV: JG - Metal lurgy Impact factor: 0.959, year: 2014

  8. Zinc biofortification of cereals

    DEFF Research Database (Denmark)

    Palmgren, Michael; Clemens, Stephan; Williams, Lorraine E.

    2008-01-01

    The goal of biofortification is to develop plants that have an increased content of bioavailable nutrients in their edible parts. Cereals serve as the main staple food for a large proportion of the world population but have the shortcoming, from a nutrition perspective, of being low in zinc...... and other essential nutrients. Major bottlenecks in plant biofortification appear to be the root-shoot barrier and - in cereals - the process of grain filling. New findings demonstrate that the root-shoot distribution of zinc is controlled mainly by heavy metal transporting P1B-ATPases and the metal...... tolerance protein (MTP) family. A greater understanding of zinc transport is important to improve crop quality and also to help alleviate accumulation of any toxic metals....

  9. Self-standing nanoribbons of antimony selenide and antimony sulfide with well-defined size and band gap

    International Nuclear Information System (INIS)

    Vadapoo, Rajasekarakumar; Krishnan, Sridevi; Yilmaz, Hulusi; Marin, Carlos

    2011-01-01

    Sub-10 nm semiconducting nanostructures are crucial for the realization of nanoscale devices. Fabrication of nanostructures at this scale with homogeneous properties is challenging. Using ab initio calculations, we show that self-standing ribbons of antimony selenide and antimony sulfide of width 1.1 nm exhibit well-defined bandgaps of 1.66 and 2.16 eV, respectively. Molecular dynamics studies show that these ribbons are stable at 500 K. The one-dimensional (1D) heterostructure of these nanoribbons (Sb 2 Se 3 /Sb 2 S 3 ) along the [001] direction shows a straddling type behavior.

  10. Laser Photolysis and Thermolysis of Organic Selenides and Tellurides for Chemical Gas-phase Deposition of Nanostructured Materials

    Directory of Open Access Journals (Sweden)

    Josef Pola

    2009-03-01

    Full Text Available Laser radiation-induced decomposition of gaseous organic selenides and tellurides resulting in chemical deposition of nanostructured materials on cold surfaces is reviewed with regard to the mechanism of the gas-phase decomposition and properties of the deposited materials. The laser photolysis and laser thermolysis of the Se and Te precursors leading to chalcogen deposition can also serve as a useful approach to nanostructured chalcogen composites and IVA group (Si, Ge, Sn element chalcogenides provided that it is carried out simultaneously with laser photolysis or thermolysis of polymer and IVA group element precursor.

  11. catena-Poly[[copper(II)-bis[μ-bis(3,5-dimethyl-1H-pyrazol-4-yl) selenide

    Science.gov (United States)

    Seredyuk, Maksym; Haukka, Matti; Pavlenko, Vadim A.; Fritsky, Igor O.

    2009-01-01

    In the title compound, {[Cu(C10H14N4Se)2](ClO4)2}n, the CuII ion is located on a twofold rotation axis and has a tetra­gonally distorted square-planar geometry constituted by four N atoms. A pair of bis(3,5-dimethyl-1H-pyrazol-4-yl) selenide (L) ligands bridges the copper centers into a polymeric chain extending along [001]. The perchlorate anions are involved in inter­molecular N—H⋯O hydrogen bonding, which links the chains into layers parallel to the bc plane. PMID:21578140

  12. catena-Poly[[copper(II-bis[μ-bis(3,5-dimethyl-1H-pyrazol-4-yl selenide

    Directory of Open Access Journals (Sweden)

    Maksym Seredyuk

    2009-11-01

    Full Text Available In the title compound, {[Cu(C10H14N4Se2](ClO42}n, the CuII ion is located on a twofold rotation axis and has a tetragonally distorted square-planar geometry constituted by four N atoms. A pair of bis(3,5-dimethyl-1H-pyrazol-4-yl selenide (L ligands bridges the copper centers into a polymeric chain extending along [001]. The perchlorate anions are involved in intermolecular N—H...O hydrogen bonding, which links the chains into layers parallel to the bc plane.

  13. Photovoltaic cells employing zinc phosphide

    Science.gov (United States)

    Barnett, Allen M.; Catalano, Anthony W.; Dalal, Vikram L.; Masi, James V.; Meakin, John D.; Hall, Robert B.

    1984-01-01

    A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

  14. Environmental risk limits for zinc

    NARCIS (Netherlands)

    Bodar CWM; SEC

    2007-01-01

    Environmental Riks Limits (ERLs) were derived for zinc. ERLs serve as advisory values to set environmental quality standards in the Netherlands. The ERLs for zinc closely follow the outcomes of earlier discussions on zinc within the Water Framework Directive and EC Regulation 793/93. The ERLs

  15. Environmental risk limits for zinc

    NARCIS (Netherlands)

    Bodar CWM; SEC

    2007-01-01

    Environmental Riks Limits (ERLs) were derived for zinc. ERLs serve as advisory values to set environmental quality standards in the Netherlands. The ERLs for zinc closely follow the outcomes of earlier discussions on zinc within the Water Framework Directive and EC Regulation 793/93. The ERLs refer

  16. Analysis on the Performance of Copper Indium Gallium Selenide (CIGS Based Photovoltaic Thermal

    Directory of Open Access Journals (Sweden)

    Zulkepli Afzam

    2016-01-01

    Full Text Available This paper deals with the efficiency improvement of Copper Indium Gallium Selenide (CIGS Photovoltaic (PV and also solar thermal collector. Photovoltaic thermal (PV/T can improve overall efficiency for PV and also solve the problem of limited roof space at urban area. Objective of this study is to clarify the effect of mass flow rate on the efficiency of the PV/T system. A CIGS solar cell is used with rated output power 65 W and 1.18 m2 of area. 4 set of experiments were carried out, which were: thermal collector with 0.12 kg/s flow rate, PV/T with 0.12 kg/s flow rate, PV/T with 0.09 kg/s flow rate and PV. It was found that PV/T with 0.12 kg/s flow rate had the highest electrical efficiency, 2.92 %. PV/T with 0.09 kg/s flow rate had the lowest electrical efficiency, 2.68 %. It also had 2 % higher overall efficiency. The efficiency gained is low due to several factors. The rated output power of the PV is low for the area of 1.18 m2. The packing factor of the PV also need to be considered as it may not be operated at the optimal packing factor. Furthermore, aluminium sheet of the PV may affect the PV temperature due to high thermal conductivity. Further study on more values of mass flow rate and also other parameters that affect the efficiency of the PV/T is necessary.

  17. Structural and electrochemical analysis of chemically synthesized microcubic architectured lead selenide thin films

    Science.gov (United States)

    Bhat, T. S.; Shinde, A. V.; Devan, R. S.; Teli, A. M.; Ma, Y. R.; Kim, J. H.; Patil, P. S.

    2018-01-01

    The present work deals with the synthesis of lead selenide (PbSe) thin films by simple and cost-effective chemical bath deposition method with variation in deposition time. The structural, morphological, and electrochemical properties of as-deposited thin films were examined using characterization techniques such as X-ray diffraction spectroscopy (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy. XRD reveals formation of rock salt phase cubic structured PbSe. FE-SEM images show the formation of microcubic structured morphology. The existence of the PbSe is confirmed from the XPS analysis. On the other hand, CV curves show four reaction peaks corresponding to oxidation [PbSe and Pb(OH)2] and reduction (PbO2 and Pb(OH)2) at the surface of PbSe thin films. The PbSe:2 sample deposited for 80 min. shows maximum specific capacitance of 454 ± 5 F g- 1 obtained at 0.25 mA cm- 2 current density. The maximum energy density of 69 Wh kg- 1 was showed by PbSe:2 electrode with a power density of 1077 W kg- 1. Furthermore, electrochemical impedance studies of PbSe:2 thin film show 80 ± 3% cycling stability even after 500 CV cycles. Such results show the importance of microcubic structured PbSe thin film as an anode in supercapacitor devices.

  18. A transparent nickel selenide counter electrode for high efficient dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Jia; Wu, Jihuai, E-mail: jhwu@hqu.edu.cn; Jia, Jinbiao; Ge, Jinhua; Bao, Quanlin; Wang, Chaotao; Fan, Leqing

    2017-04-15

    Highlights: • Ni{sub 0.85}Se was obtained by hydrothermal way and the film was gained by spin-coating. • Ni{sub 0.85}Se film has good conductivity and excellent electrocatalytic activity. • DSSC based on transparent Ni{sub 0.85}Se counter electrode obtains PCE of 8.96%. • The PCE reaches 10.76% when putting a mirror under Ni{sub 0.85}Se counter electrode. - Abstract: Nickel selenide (Ni{sub 0.85}Se) was synthesized by a facile one-step hydrothermal reaction and Ni{sub 0.85}Se film was prepared by spin-coating Ni{sub 0.85}Se ink on FTO and used as counter electrode (CE) in dye-sensitized solar cells (DSSC). The Ni{sub 0.85}Se CEs not only show high transmittance in visible range, but also possess remarkable electrocatalytic activity toward I{sup −}/I{sub 3}{sup −}. The electrocatalytic ability of Ni{sub 0.85}Se films was verified by cyclic voltammetry, electrochemical impedance spectroscopy and Tafel polarization curves. The DSSC using Ni{sub 0.85}Se CE exhibits a power conversion efficiency (PCE) of 8.96%, while the DSSC consisting of sputtered Pt CE only exhibits a PCE of 8.15%. When adding a mirror under Ni{sub 0.85}Se CE, the resultant DSSC exhibits a PCE of 10.76%, which exceeds that of a DSSC based on sputtered Pt CE (8.44%) by 27.49%.

  19. Transparent nickel selenide used as counter electrode in high efficient dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Jinbiao; Wu, Jihuai, E-mail: jhwu@hqu.edu.cn; Tu, Yongguang; Huo, Jinghao; Zheng, Min; Lin, Jianming

    2015-08-15

    Highlights: • A transparent Ni{sub 0.85}Se is prepared by a facile solvothermal reaction. • Ni{sub 0.85}Se electrode has better electrocatalytic activity than Pt electrode. • DSSC with Ni{sub 0.85}Se electrode obtains efficiency of 8.88%, higher than DSSC with Pt. • DSSC with Ni{sub 0.85}Se/mirror electrode achieves an efficiency of 10.19%. - Abstract: A transparent nickel selenide (Ni{sub 0.85}Se) is prepared by a facile solvothermal reaction and used as an efficient Pt-free counter electrode (CE) for dye-sensitized solar cells (DSSCs). Field emission scanning electron microscopy observes that the as-prepared Ni{sub 0.85}Se possesses porous structure. Cyclic voltammogram measurement indicates that Ni{sub 0.85}Se electrode has larger current density than Pt electrode. Electrochemical impedance spectroscopy shows that the Ni{sub 0.85}Se electrode has lower charge-transfer resistance than Pt electrode. Under simulated solar light irradiation with intensity of 100 mW cm{sup −2} (AM 1.5), the DSSC based on the Ni{sub 0.85}Se CE achieves a power conversion efficiency (PCE) of 8.88%, which is higher than the solar cell based on Pt CE (8.13%). Based on the transparency of Ni{sub 0.85}Se, the DSSC with Ni{sub 0.85}Se/mirror achieves a PCE of 10.19%.

  20. The bioavailability of four zinc oxide sources and zinc sulphate in broiler chickens

    NARCIS (Netherlands)

    Veldkamp, T.; Diepen, van J.T.M.; Bikker, P.

    2014-01-01

    Zinc is an essential trace element for all farm animal species. It is commonly included in animal diets as zinc oxide, zinc sulphate or organically bound zinc. Umicore Zinc Chemicals developed zinc oxide products with different mean particle sizes. Umicore Zinc Chemicals requested Wageningen UR

  1. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  2. Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

    2017-11-01

    The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

  3. Growth optimization for thick crack-free GaN layers on sapphire with HVPE

    Energy Technology Data Exchange (ETDEWEB)

    Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

    2005-05-01

    Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Development of Cr,Nd:GSGG laser as a pumping source of Ti:sapphire laser

    International Nuclear Information System (INIS)

    Tamura, Koji; Arisawa, Takashi

    1999-08-01

    Since efficiency of Cr,Nd doped gadolinium scandium gallium garnet (GSGG) laser is in principle higher than that of Nd:YAG laser, it can be a highly efficient pumping source for Ti:sapphire laser. We have made GSGG laser, and measured its oscillation properties. It was two times more efficient than Nd:YAG laser at free running mode operation. At Q-switched mode operation, fundamental output of 50 mJ and second harmonics output of 8 mJ were obtained. The developed laser had appropriate spatial profile, temporal duration, long time stability for solid laser pumping. Ti:sapphire laser oscillation was achieved by the second harmonics of GSGG laser. (author)

  5. Electrical parameters of silicon on sapphire; influence on aluminium gate MOS devices performances

    International Nuclear Information System (INIS)

    Suat, J.P.; Borel, J.

    1976-01-01

    The question is the quality level of the substrate obtained with MOS technologies on silicon on an insulating substrate. Experimental results are presented on the main electrical parameters of MOS transistors made on silicon on sapphire, e.g. mean values and spreads of: threhold voltage and surface mobilities of transistors, breakdown voltages, and leakage currents of diodes. These devices have been made in three different technologies: enhancement P. channel technology, depletion-enhancement P. channel technology, and complementary MOS technology. These technologies are all aluminium gate processes with standard design rules and 5μm channel length. Measurements show that presently available silicon on sapphire can be considered as a very suitable substrate for many MOS digital applications (but not for dynamic circuits) [fr

  6. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  7. Detection of solar neutrinos with a torsion balance with sapphire crystal

    Science.gov (United States)

    Cruceru, M.; Nicolescu, G.

    2018-01-01

    The solar neutrinos (antineutrinos) are detected with a dedicated torsion balance in the case when they interact coherently on stiff crystals (sapphire with high Debye temperature ∼1000K and lead with ∼100K Debye temperature). The balance consists in two equal masses of lead and sapphire, of 25g. An autocollimator coupled to this balance measures small rotation angles of the balance. The force with which neutrino flux interacts with these crystals is between 10-5 dyn and 10-8 dyn, comparable with that reported in Weber’s experiments [1]. A diurnal effect is observed for solar neutrinos due to the rotation of the Earth around its own axes. The solar neutrino flux obtained at the site of our experiment is ∼3.8*1010neutrinos/cm2*s [2]. Experimental data for neutrinos signals from this high sensitivity torsion balance are presented and commented [3].

  8. Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

    Directory of Open Access Journals (Sweden)

    Jaeyeong Lee

    2017-12-01

    Full Text Available The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages.

  9. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  10. Gold wetting effects on sapphire irradiated with GeV uranium ions

    International Nuclear Information System (INIS)

    Ramos, S.M.M.

    1997-01-01

    Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

  11. Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

    Science.gov (United States)

    Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

    2018-01-01

    The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

  12. Facet Appearance on the Lateral Face of Sapphire Single-Crystal Fibers during LHPG Growth

    Directory of Open Access Journals (Sweden)

    Liudmila D. Iskhakova

    2016-08-01

    Full Text Available Results of the study of the lateral surface of single-crystal (SC sapphire fibers grown along crystallographic directions [ 0001 ] and [ 11 2 ¯ 0 ] by the LHPG method are presented. The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is investigated. The microstructure of the samples is investigated with the help of an optical microscope and a JSM-5910LV scanning electronic microscope (JEOL. The crystallographic orientations of the facets on the SC sapphire fiber surface are determined by electron backscatter diffraction (EBSD. The seed orientation is studied by means of XRD techniques.

  13. Zinc in multiple sclerosis

    DEFF Research Database (Denmark)

    Bredholt, Mikkel; Fredriksen, Jette Lautrup

    2016-01-01

    In the last 35 years, zinc (Zn) has been examined for its potential role in the disease multiple sclerosis (MS). This review gives an overview of the possible role of Zn in the pathogenesis of MS as well as a meta-analysis of studies having measured Zn in serum or plasma in patients with MS...

  14. Laser ablation of dental calculus at 400 nm using a Ti:sapphire laser

    Science.gov (United States)

    Schoenly, Joshua E.; Seka, Wolf; Rechmann, Peter

    2009-02-01

    A Nd:YAG laser-pumped, frequency-doubled Ti:sapphire laser is used for selective ablation of calculus. The laser provides calculus removal. This is in stark contrast with tightly focused Gaussian beams that are energetically inefficient and lead to irreproducible results. Calculus is well ablated at high fluences >=2J/cm2 stalling occurs below this fluence because of photobleaching. Healthy hard tissue is not removed at fluences <=3 J/cm2.

  15. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors a...... as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate....

  16. A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

    Science.gov (United States)

    Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

    2001-01-01

    A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

  17. Second Breakdown Susceptibility of Silicon-On-Sapphire Diodes having Systematically Different Geometries.

    Science.gov (United States)

    1980-05-30

    Sunshine’s experiments less enlight - ening than they might otherwise have been. First, changes in optical transmittance could not be correlated directly to...silicon- on-sapphire technology ) and the orientation of the silicon surface ex- posed to the oxide layer44 ,46 ,4 7,51. Not enough data were taken to at...success. With rapid progress of semi- conductor technology , such simplified and largely intuitive methods proved to be inadequate for dealing with

  18. Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

    Science.gov (United States)

    Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

    2018-01-01

    An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

  19. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    Science.gov (United States)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  20. Origin of the 2.45 eV luminescence band observed in ZnO epitaxial layers grown on c-plane sapphire by chemical vapour deposition

    International Nuclear Information System (INIS)

    Saroj, R K; Dhar, S

    2014-01-01

    Zinc oxide epitaxial layers have been grown on c-plane sapphire substrates by the chemical vapour deposition (CVD) technique. A structural study shows (0001)-oriented films with good crystalline quality. The temperature and excitation power dependence of the photoluminescence (PL) characteristics of these layers is studied as a function of various growth parameters, such as the growth temperature, oxygen flow rate and Zn flux, which suggest that the origin of the broad visible luminescence (VL), which peaks at 2.45 eV, is the transition between the conduction band and the Zn vacancy acceptor states. A bound excitonic transition observed at 3.32 eV in low temperature PL has been identified as an exciton bound to the neutral Zn vacancy. Our study also reveals the involvement of two activation processes in the dynamics of VL, which has been explained in terms of the fluctuation of the capture barrier height for the holes trapped in Zn vacancy acceptors. The fluctuation, which might be a result of the inhomogeneous distribution of Zn vacancies, is found to be associated with an average height of 7 and 90 meV, respectively, for the local and global maxima. (paper)

  1. Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

    Science.gov (United States)

    Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

    2015-01-14

    Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

  2. Remarkable photo-catalytic degradation of malachite green by nickel doped bismuth selenide under visible light irradiation

    International Nuclear Information System (INIS)

    Kulsi, Chiranjit; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

    2017-01-01

    Highlights: • Bi_2Se_3 and Ni doped Bi_2Se_3 were synthesized by solvothermal approach. • Presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement. • Complete degradation of malachite green (MG) dye was achieved by Ni doped Bi_2Se_3 with H_2O_2. • Remarkable photo-catalytic degradation by doped bismuth selenide has been explained. • Scavenger tests show degradation of MG is mainly dominated by ·OH oxidation process. - Abstract: Bismuth selenide (Bi_2Se_3) and nickel (Ni) doped Bi_2Se_3 were prepared by a solvothermal approach to explore the photo-catalytic performance of the materials in degradation of malachite green (MG). The presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement in doped Bi_2Se_3. The results showed that the nickel doping played an important role in microstructure and photo-catalytic activity of the samples. Nickel doped Bi_2Se_3 sample exhibited higher photo-catalytic activity than that of the pure Bi_2Se_3 sample under visible-light irradiation. The photo-catalytic degradation followed first-order reaction kinetics. Fast degradation kinetics and complete (100% in 5 min of visible light irradiation) removal of MG was achieved by nickel doped Bi_2Se_3 in presence of hydrogen peroxide (H_2O_2) due to modification of band gap energies leading to suppression of photo-generated electron-hole recombination.

  3. Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

    2009-01-01

    In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

  4. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  5. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-01-01

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  6. Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

    Science.gov (United States)

    Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

    2017-06-01

    Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

  7. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  8. Study of sapphire probe tip wear when scanning on different materials

    International Nuclear Information System (INIS)

    Nicolet, Anaïs; Küng, Alain; Meli, Felix

    2012-01-01

    The accuracy of today's coordinate measuring machines (CMM) has reached a level at which exact knowledge of each component is required. The role of the probe tip is particularly crucial as it is in contact with the sample surface. Understanding how the probe tip wears off will help to narrow the measurement errors. In this work, wear of a sapphire sphere was studied for different scanning conditions and with different sample materials. Wear depth on the probe was investigated using an automated process in situ on the METAS micro-CMM and completed by measurements with an atomic force microscope. We often found a linear dependence between the wear depth and the scan length ranging from 0.5 to 9 nm m −1 , due to variations in scan speed, contact force or sample material. In the case of steel, the wear rate is proportional to the scan speed, while for aluminum several processes seem to interact. A large amount of debris was visible after the tests. Except for aluminum, wear was visible only on the sphere and not on the sample. Sapphire/steel is the worst combination in terms of wear, whereas the combination sapphire/ceramic exhibits almost no wear. (paper)

  9. Zinc bioavailability in the chick

    International Nuclear Information System (INIS)

    Hempe, J.M.

    1987-01-01

    Methods for assessing zinc bioavailability were evaluated in the chick. A low-zinc chick diet was developed using rehydrated, spray-dried egg white autoclaved at 121 C for 30 min as the primary protein source. The relative bioavailability of zinc from soy flour and beef was determined by whole-body retention of extrinsic 65 Zn, and in slope ratio assays for growth rate and tissue zinc. Compared to zinc carbonate added to an egg white-based diet, all methods gave similar estimates of approximately 100% zinc bioavailability for beef but estimates for soy flour varied widely. The slope ratio assay for growth rate gave the best estimate of zinc bioavailability for soy flour. True absorption, as measured by percent isotope retention from extrinsically labeled soy flour, was 47%

  10. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S [Evergreen, CO; Leisch, Jennifer [Denver, CO; Taylor, Matthew [West Simsbury, CT; Stanbery, Billy J [Austin, TX

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  11. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  12. Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-08-01

    With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

  13. Cytocompatibility of direct water synthesized cadmium selenide quantum dots in colo-205 cells

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Torres, Marcos R. [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States); Velez, Christian; Zayas, Beatriz [Universidad Metropolitana, ChemTox Laboratory, School of Environmental Affairs (United States); Rivera, Osvaldo [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States); Arslan, Zikri [Jackson State University, Department of Chemistry (United States); Gonzalez-Vega, Maxine N. [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States); Diaz-Diestra, Daysi; Beltran-Huarac, Juan; Morell, Gerardo [University of Puerto Rico, Molecular Science Research Center (United States); Primera-Pedrozo, Oliva M., E-mail: oprimera1@suagm.edu [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States)

    2015-06-15

    Cadmium selenide quantum dots (CdSe QDs), inorganic semiconducting nanocrystals, are alluring increased attraction due to their highly refined chemistry, availability, and super tunable optical properties suitable for many applications in different research areas, such as photovoltaics, light-emitting devices, environmental sciences, and nanomedicine. Specifically, they are being widely used in bio-imaging in contrast to organic dyes due to their high brightness and improved photo-stability, and their ability to tune their absorption and emission spectra upon changing the crystal size. The production of CdSe QDs is mostly assisted by trioctylphosphine oxide compound, which acts as solvent or solubilizing agent and renders the QDs soluble in organic compounds (such as toluene, chloroform, and hexane) that are highly toxic. To circumvent the toxicity-related factor in CdSe QDs, we report the synthesis of CdSe QDs capped with thioglycolic acid (TGA) in an aqueous medium, and their biocompatibility in colo-205 cancer cells. In this study, the [Cd{sup 2+}]/[TGA] ratio was adjusted to 11:1 and the Se concentration (10 and 15 mM) was monitored in order to evaluate its influence on the optical properties and cytocompatibility. QDs resulted to be quite stable in water (after purification) and RPMI cell medium and no precipitation was observed for long contact times, making them appealing for in vitro experiments. The spectroscopy analysis, advanced electron microscopy, and X-ray diffractometry studies indicate that the final products were successfully formed exhibiting an improved optical response. Colo-205 cells being exposed to different concentrations of TGA-capped CdSe QDs for 12, 24, and 48 h with doses ranging from 0.5 to 2.0 mM show high tolerance reaching cell viabilities as high as 93 %. No evidence of cellular apoptotic pathways was observed as pointed out by our Annexin V assays at higher concentrations. Moreover, confocal microscopy analysis conducted to

  14. Depression-like behavior and mechanical allodynia are reduced by bis selenide treatment in mice with chronic constriction injury: a comparison with fluoxetine, amitriptyline, and bupropion.

    Science.gov (United States)

    Jesse, Cristiano R; Wilhelm, Ethel A; Nogueira, Cristina W

    2010-12-01

    Neuropathic pain is associated with significant co-morbidities, including depression, which impact considerably on the overall patient experience. Pain co-morbidity symptoms are rarely assessed in animal models of neuropathic pain. Neuropathic pain is characterized by hyperexcitability within nociceptive pathways and remains difficult to treat with standard analgesics. The present study determined the effect of bis selenide and conventional antidepressants (fluoxetine, amitriptyline, and bupropion) on neuropathic pain using mechanical allodynic and on depressive-like behavior. Male mice were subjected to chronic constriction injury (CCI) or sham surgery and were assessed on day 14 after operation. Mice received oral treatment with bis selenide (1-5 mg/kg), fluoxetine, amitriptyline, or bupropion (10-30 mg/kg). The response frequency to mechanical allodynia in mice was measured with von Frey hairs. Mice were evaluated in the forced swimming test (FST) test for depression-like behavior. The CCI procedure produced mechanical allodynia and increased depressive-like behavior in the FST. All of the drugs produced antiallodynic effects in CCI mice and produced antidepressant effects in control mice without altering locomotor activity. In CCI animals, however, only the amitriptyline and bis selenide treatments significantly reduced immobility in the FST. These data demonstrate an important dissociation between the antiallodynic and antidepressant effects in mice when tested in a model of neuropathic pain. Depressive behavior in CCI mice was reversed by bis selenide and amitriptyline but not by the conventional antidepressants fluoxetine and buproprion. Bis selenide was more potent than the other drugs tested for antidepressant-like and antiallodynic effects in mice.

  15. Interaction Between Yeasts and Zinc

    Science.gov (United States)

    Nicola, Raffaele De; Walker, Graeme

    Zinc is an essential trace element in biological systems. For example, it acts as a cellular membrane stabiliser, plays a critical role in gene expression and genome modification and activates nearly 300 enzymes, including alcohol dehydrogenase. The present chapter will be focused on the influence of zinc on cell physiology of industrial yeast strains of Saccharomyces cerevisiae, with special regard to the uptake and subsequent utilisation of this metal. Zinc uptake by yeast is metabolism-dependent, with most of the available zinc translocated very quickly into the vacuole. At cell division, zinc is distributed from mother to daughter cells and this effectively lowers the individual cellular zinc concentration, which may become zinc depleted at the onset of the fermentation. Zinc influences yeast fermentative performance and examples will be provided relating to brewing and wine fermentations. Industrial yeasts are subjected to several stresses that may impair fermentation performance. Such stresses may also impact on yeast cell zinc homeostasis. This chapter will discuss the practical implications for the correct management of zinc bioavailability for yeast-based biotechnologies aimed at improving yeast growth, viability, fermentation performance and resistance to environmental stresses

  16. Does the oral zinc tolerance test measure zinc absorption

    Energy Technology Data Exchange (ETDEWEB)

    Valberg, L.S.; Flanagan, P.R.; Brennan, J.; Chamberlain, M.J.

    1985-01-01

    Increases in plasma zinc concentration were compared with radiozinc absorption after oral test doses. Ten healthy, fasting subjects were each given 385 mumol zinc chloride (25 mg Zn) labelled with 0.5 muCi /sup 65/ZnCl/sub 2/ and a non-absorbed marker, /sup 51/CrCl/sub 3/, dissolved in 100 ml of water; another 10 persons were given 354 mumol zinc chloride and 125 g of minced turkey containing 31 mumol zinc also labelled with /sup 65/Zn and /sup 51/Cr. Measurements were made of plasma zinc concentration at hourly intervals for 5 hours, radiozinc absorption by stool counting of unabsorbed radioactivity 12-36 hours later, and radiozinc retention by whole body counting at 7 days. The mean percentage of radiozinc absorbed and retained in the body from the two test meals was found to be identical (42%). In contrast the increased area under the plasma zinc curve up to 5 hours after the turkey meal, 28 +/- 9 mumol/L (mean +/- SD) was significantly less than that for zinc chloride alone, 47 +/- 15 mumol/L, p less than 0.005. Despite this difference, a good correlation was found between the area under the plasma zinc curve and /sup 65/Zn absorption in individual subjects after each meal. The discrepancy between the results of zinc absorption derived from the plasma zinc curve and /sup 65/Zn absorption for the liquid and solid test meals was most likely explained by binding of zinc to food and delayed gastric emptying of the solid meal. With a test meal of turkey meat at least this dampened the plasma appearance of zinc but did not affect its overall absorption.

  17. Does the oral zinc tolerance test measure zinc absorption

    International Nuclear Information System (INIS)

    Valberg, L.S.; Flanagan, P.R.; Brennan, J.; Chamberlain, M.J.

    1985-01-01

    Increases in plasma zinc concentration were compared with radiozinc absorption after oral test doses. Ten healthy, fasting subjects were each given 385 mumol zinc chloride (25 mg Zn) labelled with 0.5 muCi 65 ZnCl 2 and a non-absorbed marker, 51 CrCl 3 , dissolved in 100 ml of water; another 10 persons were given 354 mumol zinc chloride and 125 g of minced turkey containing 31 mumol zinc also labelled with 65 Zn and 51 Cr. Measurements were made of plasma zinc concentration at hourly intervals for 5 hours, radiozinc absorption by stool counting of unabsorbed radioactivity 12-36 hours later, and radiozinc retention by whole body counting at 7 days. The mean percentage of radiozinc absorbed and retained in the body from the two test meals was found to be identical (42%). In contrast the increased area under the plasma zinc curve up to 5 hours after the turkey meal, 28 +/- 9 mumol/L (mean +/- SD) was significantly less than that for zinc chloride alone, 47 +/- 15 mumol/L, p less than 0.005. Despite this difference, a good correlation was found between the area under the plasma zinc curve and 65 Zn absorption in individual subjects after each meal. The discrepancy between the results of zinc absorption derived from the plasma zinc curve and 65 Zn absorption for the liquid and solid test meals was most likely explained by binding of zinc to food and delayed gastric emptying of the solid meal. With a test meal of turkey meat at least this dampened the plasma appearance of zinc but did not affect its overall absorption

  18. Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

    International Nuclear Information System (INIS)

    Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

    1995-01-01

    YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

  19. Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

    Science.gov (United States)

    Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

    2018-01-08

    A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

  20. Evolution of the chemical bonding nature and electrode activity of indium selenide upon the composite formation with graphene nanosheets

    International Nuclear Information System (INIS)

    Oh, Seung Mi; Lee, Eunsil; Adpakpang, Kanyaporn; Patil, Sharad B.; Park, Mi Jin; Lim, Young Soo; Lee, Kyu Hyoung; Kim, Jong-Young; Hwang, Seong-Ju

    2015-01-01

    Graphical abstract: Display Omitted -- Highlights: • In 4 Se 2.85 @graphene nanocomposite is easily prepared by high energy mechanical milling process. • The bond covalency of In 4 Se 2.85 is notably changed upon the composite formation with graphene. • In 4 Se 2.85 @graphene nanocomposite shows promising anode performance for lithium ion battery. -- Abstract: Evolution of the chemical bonding nature and electrochemical activity of indium selenide upon the composite formation with carbon species is systematically investigated. Nanocomposites of In 4 Se 2.85 @graphene and In 4 Se 2.85 @carbon-black are synthesized via a solid state reaction between In and Se elements, and the following high energy mechanical milling of In 4 Se 2.85 with graphene and carbon-black, respectively. The high energy mechanical milling (HEMM) of In 4 Se 2.85 with carbon species gives rise to a decrease of particle size with a significant depression of the crystallinity of In 4 Se 2.85 phase. In contrast to the composite formation with carbon-black, that with graphene induces a notable decrease of (In−Se) bond covalency, underscoring significant chemical interaction between graphene and In 4 Se 2.85 . Both the nanocomposites of In 4 Se 2.85 @graphene and In 4 Se 2.85 @carbon-black show much better anode performance for lithium ion batteries with larger discharge capacity and better cyclability than does the pristine In 4 Se 2.85 material, indicating the beneficial effect of composite formation on the electrochemical activity of indium selenide. Between the present nanocomposites, the electrode performance of the In 4 Se 2.85 @graphene nanocomposite is superior to that of the In 4 Se 2.85 @carbon-black nanocomposite, which is attributable to the weakening of (In−Se) bonds upon the composite formation with graphene as well as to the better mixing between In 4 Se 2.85 and graphene. The present study clearly demonstrates that the composite formation with graphene has strong influence

  1. Chloroquine is a zinc ionophore.

    Directory of Open Access Journals (Sweden)

    Jing Xue

    Full Text Available Chloroquine is an established antimalarial agent that has been recently tested in clinical trials for its anticancer activity. The favorable effect of chloroquine appears to be due to its ability to sensitize cancerous cells to chemotherapy, radiation therapy, and induce apoptosis. The present study investigated the interaction of zinc ions with chloroquine in a human ovarian cancer cell line (A2780. Chloroquine enhanced zinc uptake by A2780 cells in a concentration-dependent manner, as assayed using a fluorescent zinc probe. This enhancement was attenuated by TPEN, a high affinity metal-binding compound, indicating the specificity of the zinc uptake. Furthermore, addition of copper or iron ions had no effect on chloroquine-induced zinc uptake. Fluorescent microscopic examination of intracellular zinc distribution demonstrated that free zinc ions are more concentrated in the lysosomes after addition of chloroquine, which is consistent with previous reports showing that chloroquine inhibits lysosome function. The combination of chloroquine with zinc enhanced chloroquine's cytotoxicity and induced apoptosis in A2780 cells. Thus chloroquine is a zinc ionophore, a property that may contribute to chloroquine's anticancer activity.

  2. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  3. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

    2015-06-01

    Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

  4. Influence of interfacial reactions on the fiber push-out behavior in sapphire fiber-reinforced-NiAl(Yb) composites

    International Nuclear Information System (INIS)

    Tewari, S.N.; Asthana, R.; Tiwari, R.; Bowman, R.R.

    1993-01-01

    The influence of microstructure of the fiber-matrix interface on the fiber push-out behavior has been examined in sapphire fiber-reinforced NiAl and NiAl(Yb) matrix composites synthesized using powder metallurgy techniques combined with zone directional solidification (DS). The push-out stress-displacement curves were observed to consist of an initial 'pseudoelastic' region, wherein the stress increased linearly with displacement, followed by an 'inelastic' region, where the slope of the stress-displacement plot decreased until a maximum stress was reached, and the subsequent stress drop to a constant 'frictional' stress. Chemical reaction between the fiber and the matrix resulted in higher interfacial shear strength in powder cloth processed sapphire-NiAl(Yb) composites as compared to the sapphire-NiAl composites. Grain boundaries in contact with the fibers on the back face of the push-out samples were the preferred sites for crack nucleation in PM composites. The frictional stress was independent of the microstructure and processing variables for NiAl composites, but showed strong dependence on these variables for the NiAl(Yb) composites. The DS processing enhanced the fiber-matrix interfacial shear strength of feedstock PM-NiAl/sapphire composites. However, it reduced the interfacial shear strength of PM-NiAl(Yb)-sapphire composites

  5. Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

    Science.gov (United States)

    Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

    2018-02-01

    (11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

  6. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  7. Innovative uses for zinc in dermatology.

    Science.gov (United States)

    Bae, Yoon Soo; Hill, Nikki D; Bibi, Yuval; Dreiher, Jacob; Cohen, Arnon D

    2010-07-01

    Severe zinc deficiency states, such as acrodermatitis enteropathica, are associated with a variety of skin manifestations, such as perioral, acral, and perineal dermatitis. These syndromes can be reversed with systemic zinc repletion. In addition to skin pathologies that are clearly zinc-dependent, many dermatologic conditions (eg, dandruff, acne, and diaper rash) have been associated and treated with zinc. Success rates for treatment with zinc vary greatly depending on the disease, mode of administration, and precise zinc preparation used. With the exception of systemic zinc deficiency states, there is little evidence that convincingly demonstrates the efficacy of zinc as a reliable first-line treatment for most dermatologic conditions. However, zinc may be considered as an adjunctive treatment modality. Further research is needed to establish the indications for zinc treatment in dermatology, optimal mode of zinc delivery, and best type of zinc compound to be used. Copyright 2010 Elsevier Inc. All rights reserved.

  8. Crystal structure of non-stoichiometric copper selenides studied by neutron scattering and X-ray diffraction

    International Nuclear Information System (INIS)

    Bikkulova, N.N.; Yagafarova, Z.A.; Asylguzhina, G.N.; Danilkin, S.A.; Fuess, H.; Skomorokhov, A.N.; Yadrovskii, E.L.; Beskrovnyi, A.I.

    2003-01-01

    Structural characteristics of non-stoichiometric copper selenides were studied by the elastic neutron and X-ray scattering techniques. Rietveld analysis was used to refine the structure of the high-temperature β-phase of the Cu 1.75 Se, Cu 1.78 Se, and Cu 1.83 Se samples. The homogeneity ranges of the cubic phase were determined. The modification of the crystal structure accompanying the β-α phase transition was studied for Cu 1.75 Se and Cu 1.98 Se compounds within the 443-10 K temperature range. It was shown that the phase transition is accompanied by distortions of the fcc lattice and the ordering of copper ions

  9. Post-test analysis of components from selenide isotope generator modules M-7, M-15, and M-18

    International Nuclear Information System (INIS)

    Wei, G.C.; Keiser, J.R.; Crouse, R.S.; Allen, M.D.; Schaffhauser, A.C.

    1979-05-01

    Several critical components removed from SIG (Selenide Isotope Generator) thermoelectric modules M-7, M-15C, M-15D, and M-18 were examined. These modules failed to show the predicted stability and conversion efficiency. Understanding the degradation and identifying means for preventing it necessitated detailed post-test examinations of key parts in the modules. Steel springs, which provided pressure for contacts at the hot and cold ends of P- or N-legs, relaxed more than expected. Beryllium oxide insulators had dark deposits that caused electrical shorts. The GdSe 1 49 N-leg exhibited cracking. The (Cu,Ag) 2 Se P-leg lost weight or sublimed excessively in module M-7 and more than expected in the other modules

  10. Synthesis and characterization of hexagonal nano-sized nickel selenide by simple hydrothermal method assisted by CTAB

    Energy Technology Data Exchange (ETDEWEB)

    Sobhani, Azam [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of); Davar, Fatemeh [Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of); Salavati-Niasari, Masoud, E-mail: salavati@kashanu.ac.ir [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of); Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P.O. Box 87317-51167 (Iran, Islamic Republic of)

    2011-07-01

    Nano-sized nickel selenide powders have been successfully synthesized via an improved hydrothermal route based on the reaction between NiCl{sub 2}.6H{sub 2}O, SeCl{sub 4} and hydrazine (N{sub 2}H{sub 4}.H{sub 2}O) in water, in present of cetyltrimethyl ammonium bromide (CTAB) as surfactant, at various conditions. The products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and X-ray energy dispersive spectroscopy analysis. Effects of temperature, reaction time and reductant agent on the morphology, the particle sizes and the phase of the final products have been investigated. It was found that the phase and morphology of the products could be greatly influenced by these parameters. The synthesis procedure is simple and uses less toxic reagents than the previously reported methods. Photoluminescence (PL) was used to study the optical properties of NiSe samples.

  11. Efficient cold cathode emission in crystalline-amorphous hybrid: Study on carbon nanotube-cadmium selenide system

    Science.gov (United States)

    Sarkar, S.; Banerjee, D.; Das, N. S.; Ghorai, U. K.; Sen, D.; Chattopadhyay, K. K.

    2018-03-01

    Cadmium Selenide (CdSe) quantum dot (QD) decorated amorphous carbon nanotubes (a-CNTs) hybrids have been synthesized by simple chemical process. The samples were characterized by field emission scanning and transmission electron microscopy, Fourier transformed infrared spectroscopy, Raman and UV-Vis spectroscopy. Lattice image obtained from transmission electron microscopic study confirms the successful attachment of CdSe QDs. It is seen that hybrid samples show an enhanced cold emission properties with good stability. The results have been explained in terms of increased roughness, more numbers of emitting sites and favorable band bending induced electron transport. ANSYS software based calculation has also supported the result. Also a first principle based study has been done which shows that due to the formation of hybrid structure there is a profound upward shift in the Fermi level, i.e. a decrease of work function, which is believed to be another key reason for the observed improved field emission performance.

  12. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    OpenAIRE

    Kohei Ueno; Eiji Kishikawa; Jitsuo Ohta; Hiroshi Fujioka

    2017-01-01

    High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films...

  13. A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

    DEFF Research Database (Denmark)

    Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

    2010-01-01

    We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

  14. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  15. Numerical simulation of terahertz-wave propagation in photonic crystal waveguide based on sapphire shaped crystal

    International Nuclear Information System (INIS)

    Zaytsev, Kirill I; Katyba, Gleb M; Mukhina, Elena E; Kudrin, Konstantin G; Karasik, Valeriy E; Yurchenko, Stanislav O; Kurlov, Vladimir N; Shikunova, Irina A; Reshetov, Igor V

    2016-01-01

    Terahertz (THz) waveguiding in sapphire shaped single crystal has been studied using the numerical simulations. The numerical finite-difference analysis has been implemented to characterize the dispersion and loss in the photonic crystalline waveguide containing hollow cylindrical channels, which form the hexagonal lattice. Observed results demonstrate the ability to guide the THz-waves in multi-mode regime in wide frequency range with the minimal power extinction coefficient of 0.02 dB/cm at 1.45 THz. This shows the prospectives of the shaped crystals for highly-efficient THz waveguiding. (paper)

  16. Response of Seven Crystallographic Orientations of Sapphire Crystals to Shock Stresses of 16 to 86 GPa

    OpenAIRE

    Kanel, G. I.; Nellis, W. J.; Savinykh, A. S.; Razorenov, S. V.; Rajendran, A. M.

    2009-01-01

    Shock-wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations were measured with time-resolved VISAR interferometry at shock stresses in the range 16 to 86 GPa. Shock propagation was normal to the surface of each cut. The angle between the c-axis of the hexagonal crystal structure and the direction of shock propagation varied from 0 for c-cut up to 90 degrees for m-cut in the basal plane. Based on published shock-induced transparencies, shock-induced optical ...

  17. Possible pitfalls in search of magnetic order in thin films deposited on single crystalline sapphire substrates

    International Nuclear Information System (INIS)

    Salzer, R.; Spemann, D.; Esquinazi, P.; Hoehne, R.; Setzer, A.; Schindler, K.; Schmidt, H.; Butz, T.

    2007-01-01

    We have studied the field and temperature dependence of the magnetic moment of single crystalline sapphire substrates with different surface orientations. All the substrates show a ferromagnetic behavior that partially changes after surface cleaning. The amount of magnetic impurities in the substrates was determined by particle induced X-ray emission. The overall analysis of the data indicates that the magnetic impurities very likely contribute to the measured ferromagnetic behavior but does not rule out completely intrinsic contributions. Our work stresses the necessity to use other than bulk characterization methods for the study of weak ferromagnetic signals of thin films grown on oxide substrates

  18. Transformation of zinc hydroxide chloride monohydrate to crystalline zinc oxide.

    Science.gov (United States)

    Moezzi, Amir; Cortie, Michael; McDonagh, Andrew

    2016-04-25

    Thermal decomposition of layered zinc hydroxide double salts provides an interesting alternative synthesis for particles of zinc oxide. Here, we examine the sequence of changes occurring as zinc hydroxide chloride monohydrate (Zn5(OH)8Cl2·H2O) is converted to crystalline ZnO by thermal decomposition. The specific surface area of the resultant ZnO measured by BET was 1.3 m(2) g(-1). A complicating and important factor in this process is that the thermal decomposition of zinc hydroxide chloride is also accompanied by the formation of volatile zinc-containing species under certain conditions. We show that this volatile compound is anhydrous ZnCl2 and its formation is moisture dependent. Therefore, control of atmospheric moisture is an important consideration that affects the overall efficiency of ZnO production by this process.

  19. Uptake and partitioning of zinc in Lemnaceae.

    Science.gov (United States)

    Lahive, Elma; O'Callaghan, Michael J A; Jansen, Marcel A K; O'Halloran, John

    2011-11-01

    Macrophytes provide food and shelter for aquatic invertebrates and fish, while also acting as reservoirs for nutrients and trace elements. Zinc accumulation has been reported for various Lemnaceae species. However, comparative accumulation across species and the link between zinc accumulation and toxicity are poorly understood. Morphological distribution and cellular storage, in either bound or soluble form, are important for zinc tolerance. This study shows differences in the uptake and accumulation of zinc by three duckweed species. Landoltia punctata and Lemna minor generally accumulated more zinc than Lemna gibba. L. minor, but not L. gibba or L. punctata, accumulated greater concentrations of zinc in roots compared to fronds when exposed to high levels of zinc. The proportion of zinc stored in the bound form relative to the soluble-form was higher in L. minor. L. punctata accumulated greater concentrations of zinc in fronds compared to roots and increased the proportion of zinc it stored in the soluble form, when exposed to high zinc levels. L. gibba is the only species that significantly accumulated zinc at low concentrations, and was zinc-sensitive. Overall, internal zinc concentrations showed no consistent correlation with toxic effect. We conclude that relationships between zinc toxicity and uptake and accumulation are species specific reflecting, among others, zinc distribution and storage. Differences in zinc distribution and storage are also likely to have implications for zinc bioavailability and trophic mobility.

  20. Inhibitory zinc-enriched terminals in mouse spinal cord

    DEFF Research Database (Denmark)

    Danscher, G; Jo, S M; Varea, E

    2001-01-01

    The ultrastructural localization of zinc transporter-3, glutamate decarboxylase and zinc ions in zinc-enriched terminals in the mouse spinal cord was studied by zinc transporter-3 and glutamate decarboxylase immunohistochemistry and zinc selenium autometallography, respectively.The distribution...

  1. Zinc: an essential oligoelement

    OpenAIRE

    Rubio, C.; González Weller, D.; Martín-Izquierdo, R. E.; Revert, C.; Rodríguez, I.; Hardisson, A.

    2007-01-01

    En este artículo se hace una revisión exhaustiva del zinc, elemento metálico esencial para el funcionamiento del organismo. Repasamos y reflejamos aspectos relacionados con la farmacocinética, con las fuentes dietéticas más importantes, así como las IDR (Ingestas Dietéticas Recomendadas) del mismo. También se hace mención a los signos y síntomas relacionados tanto con una ingesta deficiente, como con posibles efectos tóxicos, derivados de ingestas excesivas.This article comprehensively review...

  2. Cadmium and zinc

    International Nuclear Information System (INIS)

    Safaya, N.M.; McLean, J.E.; Halverson, G.A.

    1987-01-01

    Cadmium and zinc are naturally occurring trace metals that are often considered together because of their close geochemical association and similarities in chemical reactivity. The loss of two electrons from an atom of Cd or Zn imparts to each an electron configuration with completely filled d orbitals; this results in a highly stable 2/sup +/ oxidation state. But Cd and Zn differ greatly in their significance to biological systems. Whereas Zn is an essential nutrient for plants, animals, and humans, Cd is best known for its toxicity to plants and as a causative agent of several disease syndromes in animals and humans

  3. Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

    Directory of Open Access Journals (Sweden)

    Sheng-Fu Yu

    2012-01-01

    Full Text Available The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs grown on patterned sapphire substrates (PSSs with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%, 1.1 (57%, 1.5 (81%, and 1.9 (91% μm at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

  4. Zinc in Infection and Inflammation

    Directory of Open Access Journals (Sweden)

    Nour Zahi Gammoh

    2017-06-01

    Full Text Available Micronutrient homeostasis is a key factor in maintaining a healthy immune system. Zinc is an essential micronutrient that is involved in the regulation of the innate and adaptive immune responses. The main cause of zinc deficiency is malnutrition. Zinc deficiency leads to cell-mediated immune dysfunctions among other manifestations. Consequently, such dysfunctions lead to a worse outcome in the response towards bacterial infection and sepsis. For instance, zinc is an essential component of the pathogen-eliminating signal transduction pathways leading to neutrophil extracellular traps (NET formation, as well as inducing cell-mediated immunity over humoral immunity by regulating specific factors of differentiation. Additionally, zinc deficiency plays a role in inflammation, mainly elevating inflammatory response as well as damage to host tissue. Zinc is involved in the modulation of the proinflammatory response by targeting Nuclear Factor Kappa B (NF-κB, a transcription factor that is the master regulator of proinflammatory responses. It is also involved in controlling oxidative stress and regulating inflammatory cytokines. Zinc plays an intricate function during an immune response and its homeostasis is critical for sustaining proper immune function. This review will summarize the latest findings concerning the role of this micronutrient during the course of infections and inflammatory response and how the immune system modulates zinc depending on different stimuli.

  5. Zinc in Infection and Inflammation.

    Science.gov (United States)

    Gammoh, Nour Zahi; Rink, Lothar

    2017-06-17

    Micronutrient homeostasis is a key factor in maintaining a healthy immune system. Zinc is an essential micronutrient that is involved in the regulation of the innate and adaptive immune responses. The main cause of zinc deficiency is malnutrition. Zinc deficiency leads to cell-mediated immune dysfunctions among other manifestations. Consequently, such dysfunctions lead to a worse outcome in the response towards bacterial infection and sepsis. For instance, zinc is an essential component of the pathogen-eliminating signal transduction pathways leading to neutrophil extracellular traps (NET) formation, as well as inducing cell-mediated immunity over humoral immunity by regulating specific factors of differentiation. Additionally, zinc deficiency plays a role in inflammation, mainly elevating inflammatory response as well as damage to host tissue. Zinc is involved in the modulation of the proinflammatory response by targeting Nuclear Factor Kappa B (NF-κB), a transcription factor that is the master regulator of proinflammatory responses. It is also involved in controlling oxidative stress and regulating inflammatory cytokines. Zinc plays an intricate function during an immune response and its homeostasis is critical for sustaining proper immune function. This review will summarize the latest findings concerning the role of this micronutrient during the course of infections and inflammatory response and how the immune system modulates zinc depending on different stimuli.

  6. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  7. Studies of the absorbance peak on the N719 dye influence by combination between Cadmium Selenide (CdSeQDs and Zinc Sulfide(ZnSQDs

    Directory of Open Access Journals (Sweden)

    Saad Mohammad Azren

    2018-01-01

    Full Text Available The absorption rate of the photoanode can be influenced by the combination between the difference semiconductor quantum dot sensitizer. Six samples were prepared with difference weight percent (wt% of ZnS from 0% to 50% and constant wt% of CdSe which then will be called as semiconductor QDs were immersed in 0.5mM of N719 dye. The purity of ZnS powder and CdSe powder was determined using x-ray diffraction (XRD.The ultraviolet-visible spectrophotometry (Uv-Vis use to investigate the absorption spectrum and absorbance peak of this sample. 50 wt% of ZnS is the best composition to increase the absorbance peak of the photoanode. The Cyclic voltammetry (CV of varying wt% of ZnS, found that the 40 wt% of ZnS is suitable combination for a DSSC’s photoanode and produced the higher current.

  8. Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

    Science.gov (United States)

    Shen, Yaoming

    Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum-dot molecules (QDMs), which are clusters of a few QDs, has attracted attention as a possible implementation of future quantum devices such as quantum cellular antomata. With the advances in crystal growth techniques, the fabrication methods for nanostructures have been improved continuously. Lateral QDMs have been achieved. As a side topic, lateral QDMs have been studied and the result is presented in the last chapter.

  9. Power Scaling Feasibility or Chromium-Doped II-VI Laser Sources and the Demonstration of a Chromium-Doped Zinc Selenide Face-Cooled Disk Laser

    National Research Council Canada - National Science Library

    McKay, Jason

    2002-01-01

    ...+:ZnSe disk laser design that can produce sufficient output power. Cr2+:II-VI laser materials are found to be susceptible to overheating and thermal lensing, but are otherwise satisfactory laser materials...

  10. Use of contact Nd:YAG sapphire-laser system for performing partial hepatectomy and splenectomy in dogs

    Science.gov (United States)

    Yu, Chibing; Jing, Shujuan; Cai, Huimin; Shao, Lanxing; Zou, Hegui

    1993-03-01

    An Nd:YAG Sapphire laser blade was used for performing hepatectomy and splenectomy in dogs. The results suggest that a laser blade provides a new way to reduce intraoperative bleeding and to minimize tissue damage. In recent years, there have been some reports on performing surgical procedures using a contact Nd:YAG Sapphire laser system. The current animal study was conducted in order to explore the capability of incision and excision of the laser tip, the damage to the tissue, and the recovery course.

  11. Zinc as a Gatekeeper of Immune Function

    Directory of Open Access Journals (Sweden)

    Inga Wessels

    2017-11-01

    Full Text Available After the discovery of zinc deficiency in the 1960s, it soon became clear that zinc is essential for the function of the immune system. Zinc ions are involved in regulating intracellular signaling pathways in innate and adaptive immune cells. Zinc homeostasis is largely controlled via the expression and action of zinc “importers” (ZIP 1–14, zinc “exporters” (ZnT 1–10, and zinc-binding proteins. Anti-inflammatory and anti-oxidant properties of zinc have long been documented, however, underlying mechanisms are still not entirely clear. Here, we report molecular mechanisms underlying the development of a pro-inflammatory phenotype during zinc deficiency. Furthermore, we describe links between altered zinc homeostasis and disease development. Consequently, the benefits of zinc supplementation for a malfunctioning immune system become clear. This article will focus on underlying mechanisms responsible for the regulation of cellular signaling by alterations in zinc homeostasis. Effects of fast zinc flux, intermediate “zinc waves”, and late homeostatic zinc signals will be discriminated. Description of zinc homeostasis-related effects on the activation of key signaling molecules, as well as on epigenetic modifications, are included to emphasize the role of zinc as a gatekeeper of immune function.

  12. Epitactical FeAl films on sapphire and their magnetic properties

    International Nuclear Information System (INIS)

    Trautvetter, Moritz

    2011-01-01

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  13. AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

    2014-09-01

    Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

  14. High-rate sputter deposition of NiAl on sapphire fibers

    Energy Technology Data Exchange (ETDEWEB)

    Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

    2002-07-01

    Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

  15. Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

  16. Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

    International Nuclear Information System (INIS)

    Stoker, D. S.; Keto, J. W.; Baek, J.; Wang, W.; Becker, M. F.; Kovar, D.

    2006-01-01

    We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χ xxxx (3) (3ω;ω,ω,ω)=1.52±0.25x10 -13 esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects

  17. Origin for the shape of Au small crystals formed inside sapphire by ion implantation

    International Nuclear Information System (INIS)

    Ohkubo, M.; Hioki, T.

    1989-01-01

    In ion-implanted oxides, precipitation is usually formed except the case of forming solid solution. The precipitation comprises the metallic particles of implanted atoms, the oxide of implanted atoms, the metal of matrix elements, the compound of implanted atoms and matrix and so on. In particular, the metallic particles of implanted atoms are frequently faceted. From the facets, the equilibrium shape of crystals can be imagined. The equilibrium shape is determined so that the surface free energy is to be minimized. However, the shape of the metallic particles precipitated inside oxides should not be such equilibrium shape because they come in contact with foreign crystals. As the result, in the precipitation phenomena induced by ion implantation, the crystal structures of precipitated particles and substrates, the crystallographic relation between two crystals, interfacial energy and so on must be taken in consideration. In this paper, the report is made on the shape of the metallic gold particles formed inside sapphires by ion implantation that it was caused by only the crystal habit of sapphires regardless of the above-mentioned complexity. (K.I.)

  18. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    International Nuclear Information System (INIS)

    Klinter, Andreas J.; Leon-Patino, Carlos A.; Drew, Robin A.L.

    2010-01-01

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions θ transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl 2 O 4 for Al-7Cu and Al 2 O 3 for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl 2 O 4 under CuAl 2 drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl 2 O 4 causes the reduced σ sl and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in θ with higher copper contents is the increasing σ lv of the alloy.

  19. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Klinter, Andreas J., E-mail: andreas.klinter@mail.mcgill.ca [Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 University Street, Montreal, QC, H3A 2B2 (Canada); Leon-Patino, Carlos A. [Instituto de Investigaciones Metalurgicas, Universidad Michoacana de San Nicolas de Hidalgo, Apdo. Postal 888, CP 58000 Morelia, Michoacan (Mexico); Drew, Robin A.L. [Faculty of Engineering and Computer Science, Concordia University, 1455 Maisonneuve Blvd, EV 2.169, Montreal, QC, H3G 1M8 (Canada)

    2010-02-15

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions {theta} transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl{sub 2}O{sub 4} for Al-7Cu and Al{sub 2}O{sub 3} for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl{sub 2}O{sub 4} under CuAl{sub 2} drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl{sub 2}O{sub 4} causes the reduced {sigma}{sub sl} and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in {theta} with higher copper contents is the increasing {sigma}{sub lv} of the alloy.

  20. Interfacial thermal resistance between high-density polyethylene (HDPE) and sapphire

    International Nuclear Information System (INIS)

    Zheng Kun; Ma Yong-Mei; Wang Fo-Song; Zhu Jie; Tang Da-Wei

    2014-01-01

    To improve the thermal conductivity of polymeric composites, the numerous interfacial thermal resistance (ITR) inside is usually considered as a bottle neck, but the direct measurement of the ITR is hardly reported. In this paper, a sandwich structure which consists of transducer/high density polyethylene (HDPE)/sapphire is prepared to study the interface characteristics. Then, the ITRs between HDPE and sapphire of two samples with different HDPE thickness values are measured by time-domain thermoreflectance (TDTR) method and the results are ∼ 2 × 10 −7 m 2 ·K·W −1 . Furthermore, a model is used to evaluate the importance of ITR for the thermal conductivity of composites. The model's analysis indicates that reducing the ITR is an effective way of improving the thermal conductivity of composites. These results will provide valuable guidance for the design and manufacture of polymer-based thermally conductive materials. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

    Science.gov (United States)

    Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

    2018-03-01

    Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

  2. Wetting behavior of liquid Fe-C-Ti alloys on sapphire

    International Nuclear Information System (INIS)

    Gelbstein, M.; Froumin, N.; Frage, N.

    2008-01-01

    Wetting behavior in the (Fe-C-Ti)/sapphire system was studied at 1823 K. The wetting angle between sapphire and Fe-C alloys is higher than 90 deg. (93 deg. and 105 deg. for the alloys with 1.4 and 3.6 at.% C, respectively). The presence of Ti improves the wetting of the iron-carbon alloys, especially for the alloys with carbon content of 3.6 at.%. The addition of 5 at.% Ti to Fe-3.6 at.% C provides a contact angle of about 30 deg., while the same addition to Fe-1.4 at.% C decreases the wetting angle to 70 deg. only. It was established that the wetting in the systems is controlled by the formation of a titanium oxicarbide layer at the interface, which composition and thickness depend on C and Ti contents in the melt. The experimental observations are well accounted for by a thermodynamic analysis of the Fe-Ti-Al-O-C system

  3. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Sang Ling; Liu Jian-Ming; Xu Xiao-Qing; Wang Jun; Zhao Gui-Juan; Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; Wei Hong-Yuan; Liu Xiang-Lin; Yang Shao-Yan; Zhu Qin-Sheng; Wang Zhan-Guo

    2012-01-01

    The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on r-sapphire is studied. The influences of V/III ratio and growth temperature on surface morphology are investigated. V-pits and stripes are observed on the surface of a-GaN grown at 1050°C and 1100°C, respectively. The overall orientation and geometry of V-pits are uniform and independent on the V/III molar ratio in the samples grown at 1050°C, while in the samples grown at 1100°C, the areas of stripes decrease with the adding of V/III ratio. We deduce the origin of V-pits and stripes by annealing the buffer layers at different temperatures. Because of the existence of inclined (101-bar1) facets, V-pits are formed at 1050°C. The (101-bar1) plane is an N terminated surface, which is metastable at higher temperature, so stripes instead of V-pits are observed at 1100°C. Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films. Hence, to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire. (condensed matter: structure, mechanical and thermal properties)

  4. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

  5. Exploring the thermoelectric and magnetic properties of uranium selenides: Tl2Ag2USe4 and Tl3Cu4USe6

    International Nuclear Information System (INIS)

    Azam, Sikander; Khan, Saleem Ayaz; Din, Haleem Ud; Khenata, Rabah; Goumri-Said, Souraya

    2016-01-01

    The electronic, magnetic and thermoelectric properties of Tl 2 Ag 2 USe 4 and Tl 3 Cu 4 USe 6 compounds were investigated using the full potential linear augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). The exchange correlation was treated with the generalized gradient approximation plus optimized effective Hubbard parameter and spin–orbit coupling (GGA+U+SOC). The present uranium selenides show narrow direct energy band gap values of 0.7 and 0.875 eV for Tl 2 Ag 2 USe 4 and Tl 3 Cu 4 USe 6 respectively. For both selenides U-d/f states are responsible for electrical transport properties. Uranium atoms were the most contributors in the magnetic moment compared to other atoms and show ferromagnetic nature. The spin density isosurfaces show the polarization of neighboring atoms of Uranium, such as silver/copper and selenium. Thermoelectric calculations reveal that Tl 3 Cu 4 USe 6 is more suitable for thermoelectric device applications than Tl 2 Ag 2 USe 4 . - Highlights: • Electronic, magnetic and thermoelectric properties of uranium selenides are investigated with DFT. • They show a narrow direct energy band gap of 0.7 and 0.875 eV. • U-d/f states are responsible for electrical transport properties. • Tl 3 Cu 4 USe 6 is more suitable for thermoelectric device applications than Tl 2 Ag 2 USe 4 .

  6. Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Rodríguez, C.A. [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile); Porcile-Saavedra, P.F. [Departament of Physics, Faculty of Physical Sciences and Mathematics, University of Concepcion, Box 160-C, Concepción (Chile); Trejo-Cruz, C. [Department of Physics, Faculty of Science, University of Biobío, Avenue Collao 1202, Box 5C, Concepción 4051381 (Chile)

    2016-07-15

    Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films. - Graphical abstract: “Study of the crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution” by M. G. Sandoval-Paz, C. A. Rodríguez, P. F. Porcile-Saavedra, C. Trejo-Cruz. Display Omitted - Highlights: • Copper (I) selenide thin films were obtained by chemical bath deposition. • Orthorhombic to cubic phase change was induced by varying the reaction solution pH. • Orthorhombic phase is obtained mainly from a hydroxides cluster mechanism. • Cubic phase is obtained mainly from an ion by ion mechanism. • Structural, optical and electrical properties are presented as a function of pH.

  7. Cathodic hydrogen charging of zinc

    International Nuclear Information System (INIS)

    Panagopoulos, C.N.; Georgiou, E.P.; Chaliampalias, D.

    2014-01-01

    Highlights: •Incorporation of hydrogen into zinc and formation of zinc hydrides. •Investigation of surface residual stresses due to hydrogen diffusion. •Effect of hydrogen diffusion and hydride formation on mechanical properties of Zn. •Hydrogen embrittlement phenomena in zinc. -- Abstract: The effect of cathodic hydrogen charging on the structural and mechanical characteristics of zinc was investigated. Hardening of the surface layers of zinc, due to hydrogen incorporation and possible formation of ZnH 2 , was observed. In addition, the residual stresses brought about by the incorporation of hydrogen atoms into the metallic matrix, were calculated by analyzing the obtained X-ray diffraction patterns. Tensile testing of the as-received and hydrogen charged specimens revealed that the ductility of zinc decreased significantly with increasing hydrogen charging time, for a constant value of charging current density, and with increasing charging current density, for a constant value of charging time. However, the ultimate tensile strength of this material was slightly affected by the hydrogen charging procedure. The cathodically charged zinc exhibited brittle transgranular fracture at the surface layers and ductile intergranular fracture at the deeper layers of the material

  8. Electrodeposition of zinc--nickel alloys coatings

    Energy Technology Data Exchange (ETDEWEB)

    Dini, J W; Johnson, H R

    1977-10-01

    One possible substitute for cadmium in some applications is a zinc--nickel alloy deposit. Previous work by others showed that electrodeposited zinc--nickel coatings containing about 85 percent zinc and 15 percent nickel provided noticeably better corrosion resistance than pure zinc. Present work which supports this finding also shows that the corrosion resistance of the alloy deposit compares favorably with cadmium.

  9. Zinc and cadmium monosalicylates

    International Nuclear Information System (INIS)

    Kharitonov, Yu.Ya.; Tujebakhova, Z.K.

    1984-01-01

    Zinc and cadmium monosalicylates of the composition MSal, where M-Zn or Cd, Sal - twice deprotonated residue of salicylic acid O-HOC 6 H 4 COOH (H 2 Sal), are singled out and characterized. When studying thermograms, thermogravigrams, IR absorption spectra, roentgenograms of cadmium salicylate compounds (Cd(OC 6 H 4 COO) and products of their thepmal transformations, the processes of thermal decomposition of the compounds have been characterized. The process of cadmium monosalicylate decomposition takes place in one stage. Complete loss of salicylate acido group occurs in the range of 320-460 deg. At this decomposition stage cadmium oxide is formed. A supposition is made that cadmium complex has tetrahedral configuration, at that, each salicylate group plays the role of tetradentate-bridge ligand. The compound evidently has a polymer structure

  10. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  11. Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

    International Nuclear Information System (INIS)

    Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

    1999-01-01

    A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

  12. Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

    Science.gov (United States)

    Chen, Hao; Zhang, Qi; Chou, Stephen Y

    2015-02-27

    Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

  13. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Czech Academy of Sciences Publication Activity Database

    Musil, Stanislav; Matoušek, Tomáš; Dědina, Jiří

    2015-01-01

    Roč. 108, JUN (2015), s. 61-67 ISSN 0584-8547 R&D Projects: GA ČR GA14-23532S Grant - others:GA AV ČR(CZ) M200311202 Institutional support: RVO:68081715 Keywords : silver * volatile species generation * sapphire tube atomizer Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.289, year: 2015

  14. Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

    NARCIS (Netherlands)

    Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

    2004-01-01

    We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

  15. Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

    International Nuclear Information System (INIS)

    He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

    2003-01-01

    Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

  16. 78 FR 56691 - Sapphire Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes...

    Science.gov (United States)

    2013-09-13

    ... Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes Request for... Sapphire Power Marketing LLC's application for market-based rate authority, with an accompanying rate... submission of protests and interventions in lieu of paper, using the FERC Online links at http://www.ferc.gov...

  17. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, Markus; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  18. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles

  19. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  20. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  1. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  2. Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

    Science.gov (United States)

    Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

    1982-05-01

    This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

  3. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

    Science.gov (United States)

    Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-08-01

    Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. The light absorption values obtained from spectrofluorometeric study were 3300000-3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000-6500000 cps for Group 2 (polycrystalline ceramic brackets) and 2700000 -3000000 cps for

  4. Maternal Zinc Intakes and Homeostatic Adjustments during Pregnancy and Lactation

    OpenAIRE

    Donangelo, Carmen Marino; King, Janet C.

    2012-01-01

    Zinc plays critical roles during embryogenesis, fetal growth, and milk secretion, which increase the zinc need for pregnancy and lactation. Increased needs can be met by increasing the dietary zinc intake, along with making homeostatic adjustments in zinc utilization. Potential homeostatic adjustments include changes in circulating zinc, increased zinc absorption, decreased zinc losses, and changes in whole body zinc kinetics. Although severe zinc deficiency during pregnancy has devastating e...

  5. Effect of zinc from zinc sulfate on trace mineral concentrations of milk ...

    African Journals Online (AJOL)

    PRECIOUS

    2009-11-16

    Nov 16, 2009 ... It suggests that supplementation of ewes diet with zinc sulfate could be an effective way to increase zinc ... alkaline phosphates activity. Zinc supplements were .... Similar results have been reported previously when dairy cows.

  6. Studies on nanocrystalline zinc coating

    Indian Academy of Sciences (India)

    Wintec

    The particles size was also characterized by TEM analysis. Keywords. Electrochemical ... netic materials for magnetic recording, and electrocatalyst for hydrogen .... polarization behaviour was studied in the test electrolyte for zinc deposit of ...

  7. Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio, E-mail: ogino-toshio-rx@ynu.ac.jp

    2017-02-28

    Highlights: • Local hydrophobicity of phase-separated sapphire (0001) surfaces was investigated. • These surfaces are featured by coexistence of hydrophilic and hydrophobic domains. • Each domain was characterized by colloidal probe atomic force microscopy in water. • Both domains can be distinguished by adhesive forces of the probe to the surfaces. • Characterization in aqueous environment is important in bio-applications of sapphire. - Abstract: Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO{sub 2} probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

  8. Structural disorder in sapphire induced by 90.3 MeV xenon ions

    International Nuclear Information System (INIS)

    Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

    2010-01-01

    In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

  9. Properties of grazing-incidence pulsed Ti:sapphire laser oscillator

    International Nuclear Information System (INIS)

    Tamura, Koji

    2008-03-01

    A pulsed operation of a grazing-incidence double-grating Ti:sapphire laser oscillator that consists of a gain medium, back mirror, and a pair of gratings, was studied. A stable single-longitudinal-mode operation was achievable. From the calculation of the optical path trajectories, it can be explained by the increased beam walk-off from the gain medium by the introduction of the second grating compared with the conventional single-grating grazing-incidence cavity geometry. The improved spectral property was also explained by the calculations of increased dispersion. The results indicate that the oscillator configuration was useful for the applications which require stable mode operation and narrow linewidth such as the high resolution spectroscopy or the laser isotope separation. (author)

  10. Design of patterned sapphire substrates for GaN-based light-emitting diodes

    International Nuclear Information System (INIS)

    Wang Hai-Yan; Lin Zhi-Ting; Han Jing-Lei; Zhong Li-Yi; Li Guo-Qiang

    2015-01-01

    A new method for patterned sapphire substrate (PSS) design is developed and proven to be reliable and cost-effective. As progress is made with LEDs’ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs’ light extraction efficiency (LEE). Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years. (topical review)

  11. The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

    Energy Technology Data Exchange (ETDEWEB)

    Alexeev, P., E-mail: pavel.alexeev@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany); Asadchikov, V. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Bessas, D. [European Synchrotron Radiation Facility (France); Butashin, A.; Deryabin, A. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Dill, F.-U.; Ehnes, A.; Herlitschke, M. [Deutsches Elektronen-Synchrotron DESY (Germany); Hermann, R. P.; Jafari, A. [JARA-FIT, Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI (Germany); Prokhorov, I. [Kaluga Branch of Shubnikov Institute of Crystallography RAS, Research Center for Space Materials Science (Russian Federation); Roshchin, B. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Röhlsberger, R.; Schlage, K.; Sergueev, I.; Siemens, A.; Wille, H.-C., E-mail: hans.christian.wille@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany)

    2016-12-15

    We report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on Mössbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with {sup 119}Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. The device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like {sup 151}Eu, {sup 149}Sm, {sup 161}Dy, {sup 125}Te and {sup 121}Sb.

  12. Narrow linewidth operation of the RILIS titanium: Sapphire laser at ISOLDE/CERN

    CERN Document Server

    Rothe, S; Wendt, K D A; Fedosseev, V N; Kron, T; Marsh, B A

    2013-01-01

    A narrow linewidth operating mode for the Ti:sapphire laser of the CERN ISOLDE Resonance Ionization Laser Ion Source (RILIS) has been developed. This satisfies the laser requirements for the programme of in-source resonance ionization spectroscopy measurements and improves the selectivity for isomer separation using RILIS. A linewidth reduction from typically 10 GHz down to 1 GHz was achieved by the intra-cavity insertion of a second (thick) Fabry-Perot etalon. Reliable operation during a laser scan was achieved through motorized control of the tilt angle of each etalon. A scanning, stabilization and mode cleaning procedure was developed and implemented in LabVIEW. The narrow linewidth operation was confirmed in a high resolution spectroscopy study of francium isotopes by the Collinear Resonance Ionization Spectroscopy experiment. The resulting laser scans demonstrate the suitability of the laser, in terms of linewidth, spectral purity and stability for high resolution in-source spectroscopy and isomer select...

  13. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

    International Nuclear Information System (INIS)

    Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    2006-01-01

    High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

  14. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  15. Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

    DEFF Research Database (Denmark)

    Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

    2017-01-01

    higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

  16. Femtosecond laser micromachining of sapphire capillaries for laser-wakefield acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Messner, Philipp; Delbos, Niels Matthias; Maier, Andreas R. [CFEL, Center for Free-Electron Laser Science, 22607 Hamburg (Germany); University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany); Calmano, Thomas [University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany)

    2015-07-01

    Laser-plasma accelerator are promising candidates to provide ultra-relativistic electron beams for compact light sources. One factor that limits the achievable electron beam energy in a laser plasma accelerator is the Rayleigh length of the driver laser, which dictates the length over which the electron beams can effectively be accelerated. To overcome this limitation lasers can be guided in a capillary waveguide to extend the acceleration length beyond the Rayleigh length. The production of waveguide structures on scales, that are suitable for plasma acceleration is very challenging. Here, we present experimental results from waveguide machining in sapphire crystals using a Clark MXR CPA 2010 laser with a wavelength of 775nm, 1KHZ repetition rate and a pulse duration of 160 fs. We discuss the effects of different parameters like energy, lens types, writing speed and polarisation on the size and shape of the capillaries, and compare the performance of different parameter sets.

  17. Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

    Science.gov (United States)

    Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

    2016-12-15

    We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D2O) in a D2O-H2O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D2O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

  18. Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

    Science.gov (United States)

    Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

    2018-05-01

    Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

  19. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

    Science.gov (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

    2018-05-01

    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  20. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

    International Nuclear Information System (INIS)

    Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

    2012-01-01

    The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Organically pillared layered zinc hydroxides

    International Nuclear Information System (INIS)

    Kongshaug, K.O.; Fjellvaag, Helmer

    2004-01-01

    The two organically pillared layered zinc hydroxides [Zn 2 (OH) 2 (ndc)], CPO-6, and [Zn 3 (OH) 4 (bpdc)], CPO-7, were obtained in hydrothermal reactions between 2,6-naphthalenedicarboxylic acid (ndc) and zinc nitrate (CPO-6) and 4,4'biphenyldicarboxylate (bpdc) and zinc nitrate (CPO-7), respectively. In CPO-6, the tetrahedral zinc atoms are connected by two μ 2 -OH groups and two carboxylate oxygen atoms, forming infinite layers extending parallel to the bc-plane. These layers are pillared by ndc to form a three-dimensional structure. In CPO-7, the zinc hydroxide layers are containing four-, five- and six coordinated zinc atoms, and the layers are built like stairways running along the [001] direction. Each step is composed of three infinite chains running in the [010] direction. Both crystal structures were solved from conventional single crystal data. Crystal data for CPO-6: Monoclinic space group P2 1 /c (No. 14), a=11.9703(7), b=7.8154(5), c=6.2428(4) A, β=90.816(2) deg., V=583.97(6) A 3 and Z=4. Crystal data for CPO-7: Monoclinic space group C2/c (No. 15), a=35.220(4), b=6.2658(8), c=14.8888(17) A, β=112.580(4) deg., V=3033.8(6) A 3 and Z=8. The compounds were further characterized by thermogravimetric- and chemical analysis

  2. Advances in Trace Element “Fingerprinting” of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    Directory of Open Access Journals (Sweden)

    F. Lin Sutherland

    2014-12-01

    Full Text Available Mogok gem corundum samples from twelve localities were analyzed for trace element signatures (LA-ICP-MS method and oxygen isotope values (δ18O, by laser fluorination. The study augmented earlier findings on Mogok gem suites that suggested the Mogok tract forms a high vanadium gem corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents. Oxygen isotope values (δ18O for the ruby and high Si-Ca-Ga corundum (20‰–25‰ and for sapphire (10‰–20‰ indicate typical crustal values, with values >20‰ being typical of carbonate genesis. The high Si-Ca-Ga ruby has high chromium (up to 3.2 wt % Cr and gallium (up to 0. 08 wt % Ga compared to most Mogok ruby (<2 wt % Cr; <0.02 wt % Ga. In trace element ratio plots the Si-Ca-Ga-rich corundum falls into separate fields from the typical Mogok metamorphic fields. The high Ga/Mg ratios (46–521 lie well within the magmatic range (>6, and with other features suggest a potential skarn-like, carbonate-related genesis with a high degree of magmatic fluid input The overall trace element results widen the range of different signatures identified within Mogok gem corundum suites and indicate complex genesis. The expanded geochemical platform, related to a variety of metamorphic, metasomatic and magmatic sources, now provides a wider base for geographic typing of Mogok gem corundum suites. It allows more detailed comparisons with suites from other deposits and will assist identification of Mogok gem corundum sources used in jewelry.

  3. Effect of zinc sources on yield and utilization of zinc in rice-wheat sequence

    International Nuclear Information System (INIS)

    Deb, D.L.

    1990-01-01

    A field experiment was conducted on an inceptisol of Delhi to evaluate three sources of zinc, namely, zinc sulphate, zincated urea and zinc oxide on yield and utilization of zinc in rice-wheat sequence. Results indicated that, amongst the three zinc sources, zinc sulphate and zincated urea gave the best performance in increasing the grain yield of rice whereas zinc oxide depressed the grain yield of wheat significantly when compared to other treatments. The highest Zn derived from fertilizer and its utilization was obtained with zinc sulphate for both rice and wheat crops. (author). 9 refs., 4 tabs

  4. Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

    Science.gov (United States)

    Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

    2018-01-01

    Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

  5. Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

    Science.gov (United States)

    Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

    2010-03-20

    We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

  6. Facile hot-injection synthesis of stoichiometric Cu2ZnSnSe4 nanocrystals using bis(triethylsilyl) selenide.

    Science.gov (United States)

    Jin, Chunyu; Ramasamy, Parthiban; Kim, Jinkwon

    2014-07-07

    Cu2ZnSnSe4 is a prospective material as an absorber in thin film solar cells due to its many advantages including direct band gap, high absorption coefficient, low toxicity, and relative abundance (indium-free) of its elements. In this report, CZTSe nanoparticles have been synthesized by the hot-injection method using bis-(triethylsilyl)selenide [(Et3Si)2Se] as the selenium source for the first time. Energy dispersive X-ray spectroscopy (EDS) confirmed the stoichiometry of CZTSe nanoparticles. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that the nanocrystals were single phase polycrystalline with their size within the range of 25-30 nm. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements ruled out the existence of secondary phases such as Cu2SnSe3 and ZnSe. The effect of reaction time and precursor injection order on the formation of stoichiometric CZTSe nanoparticles has been studied by Raman spectroscopy. UV-vis-NIR data indicate that the CZTSe nanocrystals have an optical band gap of 1.59 eV, which is optimal for photovoltaic applications.

  7. Engineering phase transformation of cobalt selenide in carbon cages and the phases’ bifunctional electrocatalytic activity for water splitting

    Science.gov (United States)

    Gao, Jiaojiao; Liu, Li; Qiu, Hua-Jun; Wang, Yu

    2017-08-01

    Using Co-based metal-organic frameworks as the precursor, we synthesized cobalt selenide (CoSe2) nanoparticles imbedded in carbon cages. By simply controlling the annealing conditions, phase transformation of CoSe2 from the orthorhombic phase to the cubic phase has been realized. Benefitting from the metallic character, the cubic phase CoSe2 shows greatly enhanced electrocatalytic activity for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER). The as-prepared cubic phase CoSe2 electrode possesses onset overpotentials of 43 and 200 mV, and Tafel slopes of 51 and 83 mV dec-1 for HER and OER, respectively, which are remarkably superior to that of the orthorhombic phase CoSe2 catalyst and comparable to those of commercial noble-metal catalysts. In addition, the cubic phase CoSe2 electrode also demonstrates excellent stability after long-term operations. Our work not only provides a high performance catalyst for water splitting, but also introduces a new route to the design of a highly efficient catalyst by phase transformation.

  8. Aspects of a Distinct Cytotoxicity of Selenium Salts and Organic Selenides in Living Cells with Possible Implications for Drug Design

    Directory of Open Access Journals (Sweden)

    Ethiene Castellucci Estevam

    2015-07-01

    Full Text Available Selenium is traditionally considered as an antioxidant element and selenium compounds are often discussed in the context of chemoprevention and therapy. Recent studies, however, have revealed a rather more colorful and diverse biological action of selenium-based compounds, including the modulation of the intracellular redox homeostasis and an often selective interference with regulatory cellular pathways. Our basic activity and mode of action studies with simple selenium and tellurium salts in different strains of Staphylococcus aureus (MRSA and Saccharomyces cerevisiae indicate that such compounds are sometimes not particularly toxic on their own, yet enhance the antibacterial potential of known antibiotics, possibly via the bioreductive formation of insoluble elemental deposits. Whilst the selenium and tellurium compounds tested do not necessarily act via the generation of Reactive Oxygen Species (ROS, they seem to interfere with various cellular pathways, including a possible inhibition of the proteasome and hindrance of DNA repair. Here, organic selenides are considerably more active compared to simple salts. The interference of selenium (and tellurium compounds with multiple targets could provide new avenues for the development of effective antibiotic and anticancer agents which may go well beyond the traditional notion of selenium as a simple antioxidant.

  9. Iron selenide films by aerosol assisted chemical vapor deposition from single source organometallic precursor in the presence of surfactants

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Raja Azadar [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Badshah, Amin, E-mail: aminbadshah@yahoo.com [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Khan, Malik Dilshad [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Akhtar, Javeed [Department of Physics, COMSATS Institute of Information Technology, Park Road, Chak Shahzad, Islamabad (Pakistan)

    2014-09-30

    This article presents the synthesis and characterization (multinuclear nuclear magnetic resonance, Fourier transform infrared spectroscopy, carbon–hydrogen–nitrogen–sulfur analyzer, atomic absorption spectrometry and thermogravimetric analysis) of a single source organometallic precursor namely 1-acetyl-3-(4-ferrocenylphenyl)selenourea for the fabrication of iron selenide (FeSe) films on glass substrates using aerosol assisted chemical vapor deposition (AACVD). The changes in the morphologies of the films have been monitored by the use of two different surfactants i.e. triton X-100 and tetraoctylphosphonium bromide during AACVD. The role of surfactant has been evaluated by examining the interaction of the surfactants with the precursor by using UV–vis spectroscopy and cyclic voltammetry. The fabricated FeSe films have been characterized with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. - Highlights: • Ferrocene incorporated selenourea (FIS) has been synthesized and characterized. • FeSe thin films have been fabricated from FIS. • Mechanism of film growth was studied with cyclic voltammetry and UV–vis spectroscopy.

  10. Influence of growth and photocatalytic properties of copper selenide (CuSe) nanoparticles using reflux condensation method

    Energy Technology Data Exchange (ETDEWEB)

    Sonia, S. [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India); Kumar, P. Suresh [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore 641046 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.com [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India); Ponpandian, N.; Viswanathan, C. [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India)

    2013-10-15

    Influence of reaction conditions on the synthesis of copper selenide (CuSe) nanoparticles and their photo degradation activity is studied. Nearly monodispersed uniform size (23–44 nm) nanoparticles are synthesized by varying the reaction conditions using reflux condensation method. The obtained nanoparticles are characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and UV–visible absorption spectroscopy. The X-ray diffraction analysis of the sample shows the formation of nanoparticles with hexagonal CuSe structure. The result indicates that on increasing the reaction time from 4 to 12 h, the particle size decreases from 44 to 23 nm, but an increase in the reaction temperature increases the particle size. The calculated band gap E{sub g} is ranging from 2.34 to 3.05 eV which is blue shifted from the bulk CuSe (2.2 eV). The photocatalytic degradation efficiency of the CuSe nanoparticles on two organic dyes Methylene blue (MB) and Rhodamine-B (RhB) in aqueous solution under UV region is calculated as 76 and 87% respectively.

  11. Remarkable photo-catalytic degradation of malachite green by nickel doped bismuth selenide under visible light irradiation

    Science.gov (United States)

    Kulsi, Chiranjit; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

    2017-01-01

    Bismuth selenide (Bi2Se3) and nickel (Ni) doped Bi2Se3 were prepared by a solvothermal approach to explore the photo-catalytic performance of the materials in degradation of malachite green (MG). The presence of nickel was confirmed by X-ray photoelectron spectroscopy (XPS) measurement in doped Bi2Se3. The results showed that the nickel doping played an important role in microstructure and photo-catalytic activity of the samples. Nickel doped Bi2Se3 sample exhibited higher photo-catalytic activity than that of the pure Bi2Se3 sample under visible-light irradiation. The photo-catalytic degradation followed first-order reaction kinetics. Fast degradation kinetics and complete (100% in 5 min of visible light irradiation) removal of MG was achieved by nickel doped Bi2Se3 in presence of hydrogen peroxide (H2O2) due to modification of band gap energies leading to suppression of photo-generated electron-hole recombination.

  12. MOF-derived Co-doped nickel selenide/C electrocatalysts supported on Ni foam for overall water splitting

    KAUST Repository

    Ming, Fangwang

    2016-09-01

    It is of prime importance to develop dual-functional electrocatalysts with good activity for overall water splitting, which remains a great challenge. Herein, we report the synthesis of a Co-doped nickel selenide (a mixture of NiSe and NiSe)/C hybrid nanostructure supported on Ni foam using a metal-organic framework as the precursor. The resulting catalyst exhibits excellent catalytic activity toward the oxygen evolution reaction (OER), which only requires an overpotential of 275 mV to drive a current density of 30 mA cm. This overpotential is much lower than those reported for precious metal free OER catalysts. The hybrid is also capable of catalyzing the hydrogen evolution reaction (HER) efficiently. A current density of -10 mA cm can be achieved at 90 mV. In addition, such a hybrid nanostructure can achieve 10 and 30 mA cm at potentials of 1.6 and 1.71 V, respectively, along with good durability when functioning as both the cathode and the anode for overall water splitting in basic media.

  13. MOF-derived Co-doped nickel selenide/C electrocatalysts supported on Ni foam for overall water splitting

    KAUST Repository

    Ming, Fangwang; Liang, Hanfeng; Shi, Huanhuan; Xu, Xun; Mei, Gui; Wang, Zhoucheng

    2016-01-01

    It is of prime importance to develop dual-functional electrocatalysts with good activity for overall water splitting, which remains a great challenge. Herein, we report the synthesis of a Co-doped nickel selenide (a mixture of NiSe and NiSe)/C hybrid nanostructure supported on Ni foam using a metal-organic framework as the precursor. The resulting catalyst exhibits excellent catalytic activity toward the oxygen evolution reaction (OER), which only requires an overpotential of 275 mV to drive a current density of 30 mA cm. This overpotential is much lower than those reported for precious metal free OER catalysts. The hybrid is also capable of catalyzing the hydrogen evolution reaction (HER) efficiently. A current density of -10 mA cm can be achieved at 90 mV. In addition, such a hybrid nanostructure can achieve 10 and 30 mA cm at potentials of 1.6 and 1.71 V, respectively, along with good durability when functioning as both the cathode and the anode for overall water splitting in basic media.

  14. Electrical and optical characteristics of heterojunction devices composed of silicon nanowires and mercury selenide nanoparticle films on flexible plastics.

    Science.gov (United States)

    Yeo, Minje; Yun, Junggwon; Kim, Sangsig

    2013-09-01

    A pn heterojunction device based on p-type silicon (Si) nanowires (NWs) prepared by top-down method and n-type mercury selenide (HgSe) nanoparticles (NPs) synthesized by the colloidal method have been fabricated on a flexible plastic substrate. The synthesized HgSe NPs were analyzed through the effective mass approximation. The characteristics of the heterojunction device were examined and studied with the energy band diagram. The device showed typical diode characteristics with a turn-on voltage of 1.5 V and exhibited a high rectification ratio of 10(3) under relatively low forward bias. Under illumination of 633-nm-wavelength light, the device presented photocurrent efficiency of 117.5 and 20.1 nA/W under forward bias and reverse bias conditions, respectively. Moreover, the photocurrent characteristics of the device have been determined by bending of the plastic substrate upward and downward with strain of 0.8%. Even though the photocurrent efficiency has fluctuations during the bending cycles, the values are roughly maintained for 10(4) bending cycles. This result indicates that the fabricated heterojunction device has the potential to be applied as fundamental elements of flexible nanoelectronics.

  15. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi’an 710300 (China); Wang, Ye Feng [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Wang, Xue Qing [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China)

    2016-04-30

    Highlights: • PbSe thin film is deposited on FTO glass by a pulse voltage electrodeposition method. • The thin film is used as counter electrode (CE) in quantum dot-sensitized solar cell. • Superior electrocatalytic activity and stability in the polysulfide electrolyte is received. • The narrow band gap characteristics and p-type conductivity enhances the cell efficiency. • An efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells. - Abstract: Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  16. Selenide isotope generator for the Galileo Mission: copper/water axially-grooved heat pipe topical report

    International Nuclear Information System (INIS)

    Strazza, N.P.

    1979-01-01

    This report presents a summary of the major accomplishments for the development, fabrication, and testing of axially-grooved copper/water heat pipes for Selenide Isotopic Generator (SIG) applications. The early development consisted of chemical, physical, and analytical studies to define an axially-grooved tube geometry that could be successfully fabricated and provide the desired long term (up to seven years) performance is presented. Heat pipe fabrication procedures, measured performance and accelerated life testing of heat pipes S/Ns AL-5 and LT-57 conducted at B and K Engineering are discussed. S/N AL-5 was the first axially-grooved copper/water heat pipe that was fabricated with the new internal coating process for cupric oxide (CuO) and the cleaning and water preparation methods developed by Battelle Columbus Laboratories. Heat pipe S/N LT-57 was fabricated along with sixty other axially-grooved heat pipes allocated for life testing at Teledyne Energy Systems. As of June 25, 1979, heat pipes S/Ns AL-5 and LT-57 have been accelerated life tested for 13,310 and 6,292 respectively, at a nominal operating temperature of 225 0 C without any signs of thermal performance degradation

  17. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  18. Zinc content of selected tissues and taste perception in rats fed zinc deficient and zinc adequate rations

    International Nuclear Information System (INIS)

    Boeckner, L.S.; Kies, C.

    1986-01-01

    The objective of the study was to determine the effects of feeding zinc sufficient and zinc deficient rations on taste sensitivity and zinc contents of selected organs in rats. The 36 Sprague-Dawley male weanling rats were divided into 2 groups and fed zinc deficient or zinc adequate rations. The animals were subjected to 4 trial periods in which a choice of deionized distilled water or a solution of quinine sulfate at 1.28 x 10 -6 was given. A randomized schedule for rat sacrifice was used. No differences were found between zinc deficient and zinc adequate rats in taste preference aversion scores for quinine sulfate in the first three trial periods; however, in the last trial period rats in the zinc sufficient group drank somewhat less water containing quinine sulfate as a percentage of total water consumption than did rats fed the zinc deficient ration. Significantly higher zinc contents of kidney, brain and parotid salivary glands were seen in zinc adequate rats compared to zinc deficient rats at the end of the study. However, liver and tongue zinc levels were lower for both groups at the close of the study than were those of rats sacrificed at the beginning of the study

  19. The study and microstructure analysis of zinc and zinc oxide

    Directory of Open Access Journals (Sweden)

    N. Luptáková

    2015-01-01

    Full Text Available The given paper is closely connected with the process of the manufacturing of ZnO. The purity of the metal zinc has crucial influence on the quality of ZnO. ZnO can be produced by pyrometallurgical combustion of zinc and hard zinc. But this mentioned method of preparation leads to the creation of the enormous amount of waste including chemical complexes. On the basis of the occurrence of the residual content of other elements, it is possible to make prediction about the material behavior in the metallographic process. The input and finally materials were investigated and this investigation was done from the aspect of structural and chemical composition of the materials.

  20. Influence of DNA-methylation on zinc homeostasis in myeloid cells: Regulation of zinc transporters and zinc binding proteins.

    Science.gov (United States)

    Kessels, Jana Elena; Wessels, Inga; Haase, Hajo; Rink, Lothar; Uciechowski, Peter

    2016-09-01

    The distribution of intracellular zinc, predominantly regulated through zinc transporters and zinc binding proteins, is required to support an efficient immune response. Epigenetic mechanisms such as DNA methylation are involved in the expression of these genes. In demethylation experiments using 5-Aza-2'-deoxycytidine (AZA) increased intracellular (after 24 and 48h) and total cellular zinc levels (after 48h) were observed in the myeloid cell line HL-60. To uncover the mechanisms that cause the disturbed zinc homeostasis after DNA demethylation, the expression of human zinc transporters and zinc binding proteins were investigated. Real time PCR analyses of 14 ZIP (solute-linked carrier (SLC) SLC39A; Zrt/IRT-like protein), and 9 ZnT (SLC30A) zinc transporters revealed significantly enhanced mRNA expression of the zinc importer ZIP1 after AZA treatment. Because ZIP1 protein was also enhanced after AZA treatment, ZIP1 up-regulation might be the mediator of enhanced intracellular zinc levels. The mRNA expression of ZIP14 was decreased, whereas zinc exporter ZnT3 mRNA was also significantly increased; which might be a cellular reaction to compensate elevated zinc levels. An enhanced but not significant chromatin accessibility of ZIP1 promoter region I was detected by chromatin accessibility by real-time PCR (CHART) assays after demethylation. Additionally, DNA demethylation resulted in increased mRNA accumulation of zinc binding proteins metallothionein (MT) and S100A8/S100A9 after 48h. MT mRNA was significantly enhanced after 24h of AZA treatment also suggesting a reaction of the cell to restore zinc homeostasis. These data indicate that DNA methylation is an important epigenetic mechanism affecting zinc binding proteins and transporters, and, therefore, regulating zinc homeostasis in myeloid cells. Copyright © 2016 Elsevier GmbH. All rights reserved.

  1. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

  2. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  3. Impact of residual elements on zinc quality in the production of zinc oxide

    Czech Academy of Sciences Publication Activity Database

    Luptáková, Natália; Dymáček, Petr; Pešlová, F.; Jurkovič, Z.; Barborák, O.; Stodola, J.

    2016-01-01

    Roč. 55, č. 3 (2016), s. 407-410 ISSN 0543-5846 Institutional support: RVO:68081723 Keywords : zinc * metallography * microstructure of zinc * zinc oxide * production of zinc oxide Subject RIV: JG - Metallurgy Impact factor: 0.959, year: 2014

  4. Zinc Biochemistry: From a Single Zinc Enzyme to a Key Element of Life12

    Science.gov (United States)

    Maret, Wolfgang

    2013-01-01

    The nutritional essentiality of zinc for the growth of living organisms had been recognized long before zinc biochemistry began with the discovery of zinc in carbonic anhydrase in 1939. Painstaking analytical work then demonstrated the presence of zinc as a catalytic and structural cofactor in a few hundred enzymes. In the 1980s, the field again gained momentum with the new principle of “zinc finger” proteins, in which zinc has structural functions in domains that interact with other biomolecules. Advances in structural biology and a rapid increase in the availability of gene/protein databases now made it possible to predict zinc-binding sites from metal-binding motifs detected in sequences. This procedure resulted in the definition of zinc proteomes and the remarkable estimate that the human genome encodes ∼3000 zinc proteins. More recent developments focus on the regulatory functions of zinc(II) ions in intra- and intercellular information transfer and have tantalizing implications for yet additional functions of zinc in signal transduction and cellular control. At least three dozen proteins homeostatically control the vesicular storage and subcellular distribution of zinc and the concentrations of zinc(II) ions. Novel principles emerge from quantitative investigations on how strongly zinc interacts with proteins and how it is buffered to control the remarkably low cellular and subcellular concentrations of free zinc(II) ions. It is fair to conclude that the impact of zinc for health and disease will be at least as far-reaching as that of iron. PMID:23319127

  5. Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

    1991-06-29

    Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

  6. Zinc: a multipurpose trace element

    Energy Technology Data Exchange (ETDEWEB)

    Stefanidou, M.; Maravelias, C.; Dona, A.; Spiliopoulou, C. [University of Athens, Department of Forensic Medicine and Toxicology, Athens (Greece)

    2006-01-01

    Zinc (Zn) is one of the most important trace elements in the body and it is essential as a catalytic, structural and regulatory ion. It is involved in homeostasis, in immune responses, in oxidative stress, in apoptosis and in ageing. Zinc-binding proteins (metallothioneins, MTs), are protective in situations of stress and in situations of exposure to toxic metals, infections and low Zn nutrition. Metallothioneins play a key role in Zn-related cell homeostasis due to their high affinity for Zn, which is in turn relevant against oxidative stress and immune responses, including natural killer (NK) cell activity and ageing, since NK activity and Zn ion bioavailability decrease in ageing. Physiological supplementation of Zn in ageing and in age-related degenerative diseases corrects immune defects, reduces infection relapse and prevents ageing. Zinc is not stored in the body and excess intakes result in reduced absorption and increased excretion. Nevertheless, there are cases of acute and chronic Zn poisoning. (orig.)

  7. Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

    Science.gov (United States)

    Carroz, L.; Duffar, T.

    2018-05-01

    In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

  8. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

    Science.gov (United States)

    Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

    2016-11-21

    The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

  9. An All-Solid-State High Repetiton Rate Titanium:Sapphire Laser System For Resonance Ionization Laser Ion Sources

    Science.gov (United States)

    Mattolat, C.; Rothe, S.; Schwellnus, F.; Gottwald, T.; Raeder, S.; Wendt, K.

    2009-03-01

    On-line production facilities for radioactive isotopes nowadays heavily rely on resonance ionization laser ion sources due to their demonstrated unsurpassed efficiency and elemental selectivity. Powerful high repetition rate tunable pulsed dye or Ti:sapphire lasers can be used for this purpose. To counteract limitations of short pulse pump lasers, as needed for dye laser pumping, i.e. copper vapor lasers, which include high maintenance and nevertheless often only imperfect reliability, an all-solid-state Nd:YAG pumped Ti:sapphire laser system has been constructed. This could complement or even replace dye laser systems, eliminating their disadvantages but on the other hand introduce shortcomings on the side of the available wavelength range. Pros and cons of these developments will be discussed.

  10. Refractive index of r-cut sapphire under shock pressure range 5 to 65 GPa

    International Nuclear Information System (INIS)

    Cao, Xiuxia; Li, Jiabo; Li, Jun; Li, Xuhai; Xu, Liang; Wang, Yuan; Zhu, Wenjun; Meng, Chuanmin; Zhou, Xianming

    2014-01-01

    High-pressure refractive index of optical window materials not only can provide information on electronic polarizability and band-gap structure, but also is important for velocity correction in particle-velocity measurement with laser interferometers. In this work, the refractive index of r-cut sapphire window at 1550 nm wavelength was measured under shock pressures of 5–65 GPa. The refractive index (n) decreases linearly with increasing shock density (ρ) for shock stress above the Hugoniot elastic limit (HEL): n = 2.0485 (± 0.0197) − 0.0729 (± 0.0043)ρ, while n remains nearly a constant for elastic shocks. This behavior is attributed to the transition from elastic (below HEL) to heterogeneous plastic deformation (above HEL). Based on the obtained refractive index-density relationship, polarizability of the shocked sapphire was also obtained

  11. Transition-Metal-Free Diarylannulated Sulfide and Selenide Construction via Radical/Anion-Mediated Sulfur-Iodine and Selenium-Iodine Exchange.

    Science.gov (United States)

    Wang, Ming; Fan, Qiaoling; Jiang, Xuefeng

    2016-11-04

    A facile, straightforward protocol was established for diarylannulated sulfide and selenide construction through S-I and Se-I exchange without transition metal assistance. Elemental sulfur and selenium served as the chalcogen source. Diarylannulated sulfides were systematically achieved from a five- to eight-membered ring. A trisulfur radical anion was demonstrated as the initiator for this radical process via electron paramagnetic resonance (EPR) study. OFET molecules [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and [1]benzothieno[3,2-b][1]benzoselenophene (BTBS) were efficiently established.

  12. {sup 77} Se NMR of deuteride vinyl and acetylene selenides; RMn de {sup 77} Se de selenetos vinilicos e acetilenicos deuterados

    Energy Technology Data Exchange (ETDEWEB)

    Roque, L C; Stefani, H A; Arruda Campos, I.P. de; Comasseto, J V [Sao Paulo Univ., SP (Brazil). Inst. de Quimica

    1992-12-31

    The main objective of this work is a contribution for establishing a data base sufficient for interpretation of the selenium organic compound spectra. Due to the short literature on acetylene and vinyl selenides, the investigation of these compounds using {sup 77} Se NMR has been considered interesting. Particularly, compounds containing the selenium phenyl group have been selected, as they are larger used in organic chemistry. Non usual deuterated compounds have been applied, viewing simplification of the experimental results interpretation, since the use of deuterium virtually eliminates the Se-H coupling constants, due to the protons of the selenium phenyl group 5 refs., 2 tabs.

  13. On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Voronenkov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Y. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

  14. Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

    International Nuclear Information System (INIS)

    Makino, Hisao; Song, Huaping; Yamamoto, Tetsuya

    2014-01-01

    The Ga-doped ZnO (GZO) films deposited on glass and c-plane sapphire substrates have been comparatively studied in order to explore the role of grain boundaries in electrical properties. The influences of oxygen gas flow rates (OFRs) during the deposition by ion-plating were examined. The dependences of carrier concentration, lattice parameters, and characteristic of thermal desorption of Zn on the OFR showed common features between glass and sapphire substrates, however, the Hall mobility showed different behavior. The Hall mobility of GZO films on glass increased with increasing OFR of up to 15 sccm, and decreased with further increasing OFR. On the other hand, the Hall mobility of GZO films on c-sapphire increased for up to 25 sccm. The role of grain boundary in polycrystalline GZO films has been discussed. - Highlights: • Ga-doped ZnO films were deposited on glass and c-sapphire by ion-plating. • The epitaxial growth on c-sapphire was confirmed by X-ray diffraction. • Dependence of Hall mobility showed different tendency between glass and sapphire. • Grain boundaries influence transport properties at high O 2 gas flow rate

  15. [Improvement in zinc nutrition due to zinc transporter-targeting strategy].

    Science.gov (United States)

    Kambe, Taiho

    2016-07-01

    Adequate intake of zinc from the daily diet is indispensable to maintain health. However, the dietary zinc content often fails to fulfill the recommended daily intake, leading to zinc deficiency and also increases the risk of developing chronic diseases, particularly in elderly individuals. Therefore, increased attention is required to overcome zinc deficiency and it is important to improve zinc nutrition in daily life. In the small intestine, the zinc transporter, ZIP4, functions as a component that is essential for zinc absorption. In this manuscript, we present a brief overview regarding zinc deficiency. Moreover, we review a novel strategy, called "ZIP4-targeting", which has the potential to enable efficient zinc absorption from the diet. ZIP4-targeting strategy is possibly a major step in preventing zinc deficiency and improving human health.

  16. Zinc blotting assay for detection of zinc binding prolamin in barley (Hordeum vulgare) grain

    DEFF Research Database (Denmark)

    Uddin, Mohammad Nasir; Nielsen, Ane Langkilde-Lauesen; Vincze, Eva

    2014-01-01

    In plants, zinc is commonly found bound to proteins. In barley (Hordeum vulgare), major storage proteins are alcohol-soluble prolamins known as hordeins, and some of them have the potential to bind or store zinc. 65Zn overlay and blotting techniques have been widely used for detecting zinc......-binding protein. However, to our knowledge so far this zinc blotting assay has never been applied to detect a prolamin fraction in barley grains. A radioactive zinc (65ZnCl2) blotting technique was optimized to detect zinc-binding prolamins, followed by development of an easy-to-follow nonradioactive colorimetric...... zinc blotting method with a zinc-sensing dye, dithizone. Hordeins were extracted from mature barley grain, separated by SDS-PAGE, blotted on a membrane, renatured, overlaid, and probed with zinc; subsequently, zinc-binding specificity of certain proteins was detected either by autoradiography or color...

  17. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  18. Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

    Science.gov (United States)

    Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

    2017-05-01

    Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

  19. Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

    2014-09-30

    This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

  20. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    Energy Technology Data Exchange (ETDEWEB)

    Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

    1996-02-11

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

  1. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    International Nuclear Information System (INIS)

    Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

    1996-01-01

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

  2. Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

    International Nuclear Information System (INIS)

    Okada, Narihito; Tadatomo, Kazuyuki

    2012-01-01

    Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

  3. A phase stabilized and pulse shaped Ti:Sapphire oscillator-amplifier laser system for the LCLS rf photoinjector

    International Nuclear Information System (INIS)

    Kotseroglou, T.; Alley, R.; Clendenin, J.; Fisher, A.; Frisch, J.

    1998-04-01

    The authors have designed a laser system for the Linac Coherent Light Source rf photoinjector consisting of a Ti:Sapphire oscillator and 2 amplifiers using Chirped Pulse Amplification. The output after tripling will be 0.5 mJ tunable UV pulses at 120 Hz, with wavelength around 260 nm, pulsewidth of 10 ps FWHM and 200 fs rise and fall times. Amplitude stability is expected to be 1% rms in the UV and timing jitter better than 500 fs rms

  4. 21 CFR 582.5985 - Zinc chloride.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Zinc chloride. 582.5985 Section 582.5985 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5985 Zinc chloride. (a) Product. Zinc chloride. (b) Conditions of use. This substance is...

  5. 21 CFR 182.8985 - Zinc chloride.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Zinc chloride. 182.8985 Section 182.8985 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8985 Zinc chloride. (a) Product. Zinc chloride. (b) Conditions of use. This substance is generally recognized as safe when used in...

  6. 21 CFR 558.78 - Bacitracin zinc.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Bacitracin zinc. 558.78 Section 558.78 Food and... in Animal Feeds § 558.78 Bacitracin zinc. (a) Specifications. Type A medicated articles containing bacitracin zinc equivalent to 10, 25, 40, or 50 grams per pound bacitracin. (b) Approvals. See No. 046573 in...

  7. relationship between maternal serum zinc, cord blood zinc and birth

    African Journals Online (AJOL)

    FOBUR

    those obtained by Okonofua et al in Ile-Ife and. 17. Iqbal et al in Bangladesh but lower than the values. 18. 11 reported in studies in India and the United States. The similarity in the mean maternal serum zinc obtained in this study with the studies in Ife and. Bangladesh could be a reflection of the similarity among the study ...

  8. Transition from Sign-Reversed to Sign-Preserved Cooper-Pairing Symmetry in Sulfur-Doped Iron Selenide Superconductors.

    Science.gov (United States)

    Wang, Qisi; Park, J T; Feng, Yu; Shen, Yao; Hao, Yiqing; Pan, Bingying; Lynn, J W; Ivanov, A; Chi, Songxue; Matsuda, M; Cao, Huibo; Birgeneau, R J; Efremov, D V; Zhao, Jun

    2016-05-13

    An essential step toward elucidating the mechanism of superconductivity is to determine the sign or phase of the superconducting order parameter, as it is closely related to the pairing interaction. In conventional superconductors, the electron-phonon interaction induces attraction between electrons near the Fermi energy and results in a sign-preserved s-wave pairing. For high-temperature superconductors, including cuprates and iron-based superconductors, prevalent weak coupling theories suggest that the electron pairing is mediated by spin fluctuations which lead to repulsive interactions, and therefore that a sign-reversed pairing with an s_{±} or d-wave symmetry is favored. Here, by using magnetic neutron scattering, a phase sensitive probe of the superconducting gap, we report the observation of a transition from the sign-reversed to sign-preserved Cooper-pairing symmetry with insignificant changes in T_{c} in the S-doped iron selenide superconductors K_{x}Fe_{2-y}(Se_{1-z}S_{z})_{2}. We show that a rather sharp magnetic resonant mode well below the superconducting gap (2Δ) in the undoped sample (z=0) is replaced by a broad hump structure above 2Δ under 50% S doping. These results cannot be readily explained by simple spin fluctuation-exchange pairing theories and, therefore, multiple pairing channels are required to describe superconductivity in this system. Our findings may also yield a simple explanation for the sometimes contradictory data on the sign of the superconducting order parameter in iron-based materials.

  9. Polyamide–thallium selenide composite materials via temperature and pH controlled adsorption–diffusion method

    Energy Technology Data Exchange (ETDEWEB)

    Ivanauskas, Remigijus; Samardokas, Linas [Department of Physical and Inorganic Chemistry, Kaunas University of Technology, Radvilenu str. 19, Kaunas LT-50254 (Lithuania); Mikolajunas, Marius; Virzonis, Darius [Department of Technology, Kaunas University of Technology, Panevezys Faculty, Daukanto 12, 35212 Panevezys (Lithuania); Baltrusaitis, Jonas, E-mail: job314@lehigh.edu [Department of Chemical and Biomolecular Engineering, Lehigh University, B336 Iacocca Hall, 111 Research Drive, Bethlehem, PA 18015 (United States)

    2014-10-30

    Graphical abstract: Single phase polyamide–thallium selenide hybrid functional materials were synthesized for solar energy conversion. - Highlights: • Thallium selenide–polyamide composite materials surfaces synthesized. • Mixed phase composition confirmed by XRD. • Increased temperature resulted in a denser surface packing. • Urbach energies correlated with AFM showing decreased structural disorder. • Annealing in N{sub 2} at 100 °C yielded a single TlSe phase. - Abstract: Composite materials based on III–VI elements are promising in designing efficient photoelectronic devices, such as thin film organic–inorganic solar cells. In this work, TlSe composite materials were synthesized on a model polymer polyamide using temperature and pH controlled adsorption–diffusion method via (a) selenization followed by (b) the exposure to the group III metal (Tl) salt solution and their surface morphological, chemical and crystalline phase information was determined with particular focus on their corresponding structure–optical property relationship. XRD analysis yielded a complex crystalline phase distribution which correlated well with the optical and surface morphological properties measured. pH 11.3 and 80 °C yielded well defined, low structural disorder composite material surface. After annealing in N{sub 2} at 100 °C, polycrystalline PA-Tl{sub x}Se{sub y} composite materials yielded a single TlSe phase due to the enhanced diffusion and reaction of thallium ions into the polymer. The method described here can be used to synthesize variety of binary III–VI compounds diffused into the polymer at relatively low temperatures and low overall cost, thus providing for a flexible synthesis route for novel composite solar energy harvesting materials.

  10. New quaternary thallium indium germanium selenide TlInGe2Se6: Crystal and electronic structure

    Science.gov (United States)

    Khyzhun, O. Y.; Parasyuk, O. V.; Tsisar, O. V.; Piskach, L. V.; Myronchuk, G. L.; Levytskyy, V. O.; Babizhetskyy, V. S.

    2017-10-01

    Crystal structure of a novel quaternary thallium indium germanium selenide TlInGe2Se6 was investigated by means of powder X-ray diffraction method. It was determined that the compound crystallizes in the trigonal space group R3 with the unit cell parameters a = 10.1798(2) Å, c = 9.2872(3) Å. The relationship with similar structures was discussed. The as-synthesized TlInGe2Se6 ingot was tested with X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). In particular, the XPS valence-band and core-level spectra were recorded for initial and Ar+ ion-bombarded surfaces of the sample under consideration. The XPS data allow for statement that the TlInGe2Se6 surface is rigid with respect to Ar+ ion-bombardment. Particularly, Ar+ ion-bombardment (3.0 keV, 5 min duration, ion current density fixed at 14 μA/cm2) did not cause substantial modifications of stoichiometry in topmost surface layers. Furthermore, comparison on a common energy scale of the XES Se Kβ2 and Ge Kβ2 bands and the XPS valence-band spectrum reveals that the principal contributions of the Se 4p and Ge 4p states occur in the upper and central portions of the valence band of TlInGe2Se6, respectively, with also their substantial contributions in other portions of the band. The bandgap energy of TlInGe2Se6 at the level of αg=103 cm-1 is equal to 2.38 eV at room temperature.

  11. Physical and biophysical assessment of highly fluorescent, magnetic quantum dots of a wurtzite-phase manganese selenide system

    Science.gov (United States)

    Sarma, Runjun; Das, Queen; Hussain, Anowar; Ramteke, Anand; Choudhury, Amarjyoti; Mohanta, Dambarudhar

    2014-07-01

    Combining fluorescence and magnetic features in a non-iron based, select type of quantum dots (QDs) can have immense value in cellular imaging, tagging and other nano-bio interface applications, including targeted drug delivery. Herein, we report on the colloidal synthesis and physical and biophysical assessment of wurtzite-type manganese selenide (MnSe) QDs in cell culture media. Aiming to provide a suitable colloidal system of biological relevance, different concentrations of reactants and ligands (e.g., thioglycolic acid, TGA) have been considered. The average size of the QDs is ˜7 nm, which exhibited a quantum yield of ˜75% as compared to rhodamine 6 G dye®. As revealed from time-resolved photoluminescence (TR-PL) response, the near band edge emission followed a bi-exponential decay feature with characteristic times of ˜0.64 ns and 3.04 ns. At room temperature, the QDs were found to exhibit paramagnetic features with coercivity and remanence impelled by TGA concentrations. With BSA as a dispersing agent, the QDs showed an improved optical stability in Dulbecco’s Modified Eagle Media® (DMEM) and Minimum Essential Media® (MEM), as compared to the Roswell Park Memorial Institute® (RPMI-1640) media. Finally, the cell viability of lymphocytes was found to be strongly influenced by the concentration of MnSe QDs, and had a safe limit upto 0.5 μM. With BSA inclusion in cell media, the cellular uptake of MnSe QDs was observed to be more prominent, as revealed from fluorescence imaging. The fabrication of water soluble, nontoxic MnSe QDs would open up an alternative strategy in nanobiotechnology, while preserving their luminescent and magnetic properties intact.

  12. Polyamide–thallium selenide composite materials via temperature and pH controlled adsorption–diffusion method

    International Nuclear Information System (INIS)

    Ivanauskas, Remigijus; Samardokas, Linas; Mikolajunas, Marius; Virzonis, Darius; Baltrusaitis, Jonas

    2014-01-01

    Graphical abstract: Single phase polyamide–thallium selenide hybrid functional materials were synthesized for solar energy conversion. - Highlights: • Thallium selenide–polyamide composite materials surfaces synthesized. • Mixed phase composition confirmed by XRD. • Increased temperature resulted in a denser surface packing. • Urbach energies correlated with AFM showing decreased structural disorder. • Annealing in N 2 at 100 °C yielded a single TlSe phase. - Abstract: Composite materials based on III–VI elements are promising in designing efficient photoelectronic devices, such as thin film organic–inorganic solar cells. In this work, TlSe composite materials were synthesized on a model polymer polyamide using temperature and pH controlled adsorption–diffusion method via (a) selenization followed by (b) the exposure to the group III metal (Tl) salt solution and their surface morphological, chemical and crystalline phase information was determined with particular focus on their corresponding structure–optical property relationship. XRD analysis yielded a complex crystalline phase distribution which correlated well with the optical and surface morphological properties measured. pH 11.3 and 80 °C yielded well defined, low structural disorder composite material surface. After annealing in N 2 at 100 °C, polycrystalline PA-Tl x Se y composite materials yielded a single TlSe phase due to the enhanced diffusion and reaction of thallium ions into the polymer. The method described here can be used to synthesize variety of binary III–VI compounds diffused into the polymer at relatively low temperatures and low overall cost, thus providing for a flexible synthesis route for novel composite solar energy harvesting materials

  13. Effect of resveratrol and zinc on intracellular zinc status in normal human prostate epithelial cells

    Science.gov (United States)

    To evaluate the influence of resveratrol on cellular zinc status, normal human prostate epithelial (NHPrE) cells were treated with 6 levels of resveratrol (0, 0.5, 1, 2.5, 5 and 10 microM) and 4 levels of zinc [0, 4, 16, and 32 microM for zinc-deficient (ZD), zinc-normal (ZN), zinc-adequate (ZA), an...

  14. Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

    2015-10-30

    Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

  15. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  16. Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

    Science.gov (United States)

    Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

    2018-01-01

    Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

  17. High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

    Science.gov (United States)

    Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

    2018-03-01

    Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

  18. Airborne particulate concentration during laser hair removal: A comparison between cold sapphire with aqueous gel and cryogen skin cooling.

    Science.gov (United States)

    Ross, Edward V; Chuang, Gary S; Ortiz, Arisa E; Davenport, Scott A

    2018-04-01

    High concentrations of sub-micron nanoparticles have been shown to be released during laser hair removal (LHR) procedures. These emissions pose a potential biohazard to healthcare workers that have prolonged exposure to LHR plume. We sought to demonstrate that cold sapphire skin cooling done in contact mode might suppress plume dispersion during LHR. A total of 11 patients were recruited for laser hair removal. They were treated on the legs and axilla with a 755 or 1064 nm millisecond-domain laser equipped with either (i) cryogen spray (CSC); (ii) refrigerated air (RA); or (iii) contact cooling with sapphire (CC). Concentration of ultrafine nanoparticles <1 μm were measured just before and during LHR with the three respective cooling methods. For contact cooling (CC), counts remained at baseline levels, below 3,500 parts per cubic centimeter (ppc) for all treatments. In contrast, the CSC system produced large levels of plume, peaking at times to over 400,000 ppc. The CA cooled system produced intermediate levels of plume, about 35,000 ppc (or about 10× baseline). Cold Sapphire Skin cooling with gel suppresses plume during laser hair removal, potentially eliminating the need for smoke evacuators, custom ventilation systems, and respirators during LHR. Lasers Surg. Med. 50:280-283, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  19. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

    International Nuclear Information System (INIS)

    Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

    2008-01-01

    This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. The active control devices of the size of products based on sapphire measuring tips with three degrees of freedom

    Science.gov (United States)

    Leun, E. V.; Leun, V. I.; Sysoev, V. K.; Zanin, K. A.; Shulepov, A. V.; Vyatlev, P. A.

    2018-01-01

    The article presents the results of the calculation of the load capacity of the active control devices (ACD) sapphire tip, which showed nearly 30-fold margin of safety to shock loads and experimental researches in mechanical contact with 5 cogs cutter 15 mm in diameter rotating with a frequency of 1000 rpm, which confirmed the calculations, determined the surface roughness Rz of the contact area of no more than 0.15 μm. Conditions have been created for recording without distortion of the image through a sapphire tip in contact with the processed article. A ACD design with new functionality is proposed: with one, two and three degrees of freedom of the sapphire tip and allows measuring the taper of the article and measurements on the chord. It is shown that with the implementation of their fixed head like the frame of the gyroscope with the rotations around the axes OY and OZ. It is shown that the rotation of the tip around the axis OX can be replaced more convenient for the implementation of the angular offset of the transferred image due to rotation of the output end of the flexible optical waveguide relative to the input. This makes it possible to reduce the "blurring of the image" during registration of the fast moving product profile when the slope of the recorder lines coincides with the slope of the edges of the image elements of the selected moving elements of the article.

  1. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Cyclic AMP Pathway Activation and Extracellular Zinc Induce Rapid Intracellular Zinc Mobilization in Candida albicans

    Science.gov (United States)

    Kjellerup, Lasse; Winther, Anne-Marie L.; Wilson, Duncan; Fuglsang, Anja T.

    2018-01-01

    Zinc is an essential micronutrient, required for a range of zinc-dependent enzymes and transcription factors. In mammalian cells, zinc serves as a second messenger molecule. However, a role for zinc in signaling has not yet been established in the fungal kingdom. Here, we used the intracellular zinc reporter, zinbo-5, which allowed visualization of zinc in the endoplasmic reticulum and other components of the internal membrane system in Candida albicans. We provide evidence for a link between cyclic AMP/PKA- and zinc-signaling in this major human fungal pathogen. Glucose stimulation, which triggers a cyclic AMP spike in this fungus resulted in rapid intracellular zinc mobilization and this “zinc flux” could be stimulated with phosphodiesterase inhibitors and blocked via inhibition of adenylate cyclase or PKA. A similar mobilization of intracellular zinc was generated by stimulation of cells with extracellular zinc and this effect could be reversed with the chelator EDTA. However, zinc-induced zinc flux was found to be cyclic AMP independent. In summary, we show that activation of the cyclic AMP/PKA pathway triggers intracellular zinc mobilization in a fungus. To our knowledge, this is the first described link between cyclic AMP signaling and zinc homeostasis in a human fungal pathogen. PMID:29619016

  3. Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging

    Science.gov (United States)

    Kim, Hokwon; Dumcenco, Dumitru; Fregnaux, Mathieu; Benayad, Anass; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier; Lanes Group, Epfl Team; Leti, Cea Team

    The electronic band structure evaluation of two-dimensional metal dichalcogenides is critical as the band structure can be greatly influenced by the film thickness, strain, and substrate. Here, we performed a direct measurement of the band structure of as-grown monolayer MoS2 on single crystalline sapphire by reciprocal-space photoelectron emission microscopy with a conventional laboratory ultra-violet He I light source. Arrays of gold electrodes were deposited onto the sample in order to avoid charging effects due to the insulating substrate. This allowed the high resolution mapping (ΔE = 0.2 eV Δk = 0.05 Å-1) of the valence states in momentum space down to 7 eV below the Fermi level. The high degree of the epitaxial alignment of the single crystalline MoS2 nuclei was verified by the direct momentum space imaging over a large area containing multiple nuclei. The derived values of the hole effective mass were 2.41 +/-0.05 m0 and 0.81 +/-0.05 m0, respectively at Γ and K points, consistent with the theoretical values of the freestanding monolayer MoS2 reported in the literature. HK acknowledges the french CEA Basic Technological Research program (RTB) for funding.

  4. Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

    International Nuclear Information System (INIS)

    Kulinich, S.A.; Yoshida, T.; Yamamoto, H.; Terashima, K.

    2003-01-01

    We report the deposition of LiNb 1-x Ta x O 3 (0≤x≤1) films on (001) sapphire substrates in soft vacuum using a radio frequency thermal plasma. The growth rate, crystallinity, c-axis orientation, and surface roughness were examined as functions of substrate temperature, precursor feed rate, and substrate surface condition. The film Nb/Ta ratio was well controlled by using an appropriate uniform mixture of lithium-niobium and lithium-tantalum alkoxide solutions. The epitaxy and crystallinity of the films were much improved when the film growth rate was raised from 20 to 180-380 nm/min, where the films with the (006) rocking curve full width at half maximum values as low as 0.12 deg. -0.2 deg. could be produced. The film roughness could be reduced by using a liquid precursor with higher metal concentrations, achieving the root-mean-square value on the order of 5 nm. The refractive indices of the films are in good correspondence with their composition and crystallinity

  5. Optical properties tailoring by high fluence implantation of Ag ions on sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Silva, R.C. da; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Alves, E.

    2006-01-01

    Optical and structural properties of single crystalline α-Al 2 O 3 were changed by the implantation of high fluences of Ag ions. Colourless transparent (101-bar 0) sapphire samples were implanted at room temperature with 160keV silver ions and fluences up to 1x10 17 Agcm -2 . Surface amorphization is observed at the fluence of 6x10 16 Agcm -2 . Except for the lower fluences (below 6x10 16 Agcm -2 ) the optical absorption spectra reveal the presence of a band peaking in the region 450-500nm, depending on the retained fluence. This band has been attributed to the presence of silver colloids, being thus 1x10 16 Agcm -2 below the threshold for colloid formation during the implantation. Annealing in oxidizing atmosphere promotes the recrystallization along with segregation of Ag followed by loss through evaporation. Recrystallization is retarded for annealing in reducing atmosphere and the Ag profile displays now a double peak structure after evaporation. Playing with the implantation fluence, temperature and annealing atmosphere controllable shifts of the position and intensity of the optical bands in the visible were achieved

  6. Surface-Energy-Anisotropy-Induced Orientation Effects on RayleighInstabilities in Sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Santala, Melissa; Glaeser, Andreas M.

    2006-01-01

    Arrays of controlled-geometry, semi-infinite pore channels of systematically varied crystallographic orientation were introduced into undoped m-plane (10{bar 1}0) sapphire substrates using microfabrication techniques and ion-beam etching and subsequently internalized by solid-state diffusion bonding. A series of anneals at 1700 C caused the breakup of these channels into discrete pores via Rayleigh instabilities. In all cases, channels broke up with a characteristic wavelength larger than that expected for a material with isotropic surface energy, reflecting stabilization effects due to surface-energy anisotropy. The breakup wavelength and the time required for complete breakup varied significantly with channel orientation. For most orientations, the instability wavelength for channels of radius R was in the range of 13.2R-25R, and complete breakup occurred within 2-10 h. To first order, the anneal times for complete breakup scale with the square of the breakup wavelength. Channels oriented along a <11{bar 2}0> direction had a wavelength of {approx} 139R, and required 468 h for complete breakup. Cross-sectional analysis of channels oriented along a <11{bar 2}0> direction showed the channel to be completely bounded by stable c(0001), r{l_brace}{bar 1}012{r_brace}, and s{l_brace}10{bar 1}1{r_brace} facets.

  7. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

    Directory of Open Access Journals (Sweden)

    Engin Arslan

    2014-01-01

    Full Text Available The 150 nm thick, (0001 orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm template/(0001 sapphire substrate. The indium (x concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x, lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002 and asymmetric (10–15 reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.

  8. Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

    Science.gov (United States)

    Wang, Rongrong; Guo, Dan; Xie, Guoxin; Pan, Guoshun

    2016-01-01

    Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanoribbons. However, very limited attention has been paid to the step formation in manufacturing process. In the present work, investigations have been conducted into this step formation mechanism on the sapphire c (0001) surface by using both experiments and simulations. The step evolutions at different stages in the polishing process were investigated with atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). The simulation of idealized steps was constructed theoretically on the basis of experimental results. It was found that (1) the subtle atomic structures (e.g., steps with different sawteeth, as well as steps with straight and zigzag edges), (2) the periodicity and (3) the degree of order of the steps were all dependent on surface composition and miscut direction (step edge direction). A comparison between experimental results and idealized step models of different surface compositions has been made. It has been found that the structure on the polished surface was in accordance with some surface compositions (the model of single-atom steps: Al steps or O steps). PMID:27444267

  9. Solid state dewetting and stress relaxation in a thin single crystalline Ni film on sapphire

    International Nuclear Information System (INIS)

    Rabkin, E.; Amram, D.; Alster, E.

    2014-01-01

    In this study, we deposited a 80 nm thick single crystalline Ni film on a sapphire substrate. Heat treatment of this film at 1000 °C followed by slow cooling resulted in the formation of faceted holes, star-like channel instabilities and faceted microwires. The ridges at the rims of faceted holes and channels exhibited a twinning orientation relationship with the rest of the film. A sub-nanometer-high hexagonal topography pattern on the surface of the unperturbed film was observed by atomic force microscopy. No such pattern was observed on the top facets of isolated Ni particles and hole ridges. We discuss the observed dewetting patterns in terms of the effects of Ni surface anisotropy and faceting on solid state dewetting. The hexagonal pattern on the surface of the unperturbed film was attributed to thermal stress relaxation in the film via dislocations glide. This work demonstrates that solid state dewetting of single crystalline metal films can be utilized for film patterning and for producing hierarchical surface topographies

  10. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Kishikawa, Eiji; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-02-01

    High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101 ¯ 2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6 μ m . Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016-2 × 1018 cm-3 and 2-9 cm2V-1s-1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  11. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-02-01

    Full Text Available High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001 via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  12. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    International Nuclear Information System (INIS)

    Schwinkendorf, Jan-Patrick

    2012-05-01

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  13. α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

    Science.gov (United States)

    Roberts, J. W.; Jarman, J. C.; Johnstone, D. N.; Midgley, P. A.; Chalker, P. R.; Oliver, R. A.; Massabuau, F. C.-P.

    2018-04-01

    α-Ga2O3 is a metastable phase of Ga2O3 of interest for wide bandgap engineering since it is isostructural with α-In2O3 and α-Al2O3. α-Ga2O3 is generally synthesised under high pressure (several GPa) or relatively high temperature (∼500 °C). In this study, we report the growth of α-Ga2O3 by low temperature atomic layer deposition (ALD) on sapphire substrate. The film was grown at a rate of 0.48 Å/cycle, and predominantly consists of α-Ga2O3 in the form of (0001) -oriented columns originating from the interface with the substrate. Some inclusions were also present, typically at the tips of the α phase columns and most likely comprising ε-Ga2O3. The remainder of the Ga2O3 film - i.e. nearer the surface and between the α-Ga2O3 columns, was amorphous. The film was found to be highly resistive, as is expected for undoped material. This study demonstrates that α-Ga2O3 films can be grown by low temperature ALD and suggests the possibility of a new range of ultraviolet optoelectronic and power devices grown by ALD. The study also shows that scanning electron diffraction is a powerful technique to identify the different polymorphs of Ga2O3 present in multiphase samples.

  14. Critical thickness for Nb nanofilm on sapphire substrate: a critical analysis using finite element method

    International Nuclear Information System (INIS)

    Kumar, Arun; Subramaniam, Anandh

    2009-01-01

    Full text: On growth beyond critical thickness, interfacial misfit dislocations partially relax the misfit strains, in epitaxially grown nanofilms. In this study the stress state and growth of nanofilms is simulated using Finite Element Method (FEM); by imposing stress-free strains, corresponding to the lattice mismatch between Nb nanofilm and Sapphire substrate. On growth of the Nb nanofilm, a triangular network of edge misfit dislocations nucleates at the (0001) Al2ο3 || (111) Nb , interface. Using a combined simulation of a coherently strained nanofilm and an edge dislocation, the equilibrium criterion for the nucleation of an edge dislocation is determined. Theoretical analyses in literature use only the component of the Burger's vector parallel to the interface, which is an erroneous description of the stress state and energetics of the system. In this investigation the full interfacial edge dislocation is simulated using standard commercially available software and comparisons are made with results available in literature to bring out the utility of the methodology

  15. A sapphire monolithic differential accelerometer as core sensor for gravity gradiometric geophysical instrumentation

    Directory of Open Access Journals (Sweden)

    F. Mango

    2006-06-01

    Full Text Available Gradiometric gravimetry is a survey technique widely used in geological structure investigation. This work demonstrates the feasibility of a new class of low frequency accelerometers for geodynamics studies and space applications. We present the design features of a new low noise single-axis differential accelerometer; the sensor is suitable to be used in a Gravity Gradiometer (GG system for land geophysical survey and gravity gradient measurements. A resolution of 1 Eötvös (1 Eö=10?9s?2 at one sample per second is achievable in a compact, lightweight (less than 2 kg portable instrument, operating at room temperature. The basic components of the sensor are two identical rigidly connected accelerometers separated by a 15-cm baseline vector and the useful signal is extracted as the subtraction of the two outputs, by means of an interferometric microwave readout system. The structure will be engraved in a monocrystal of sapphire by means of Computer-Numerically-Controlled (CNC ultrasonic machining: the material was chosen because of its unique mix of outstanding mechanical and dielectric properties.

  16. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

    Science.gov (United States)

    Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

    2017-12-01

    Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

  17. Neutron irradiation of sapphire for compressive strengthening. II. Physical properties changes

    Energy Technology Data Exchange (ETDEWEB)

    Regan, Thomas M. E-mail: thomas_regan@uml.edu; Harris, Daniel C. E-mail: harrisdc@navair.navy.mil; Blodgett, David W.; Baldwin, Kevin C.; Miragliotta, Joseph A.; Thomas, Michael E.; Linevsky, Milton J.; Giles, John W.; Kennedy, Thomas A.; Fatemi, Mohammad; Black, David R.; Lagerloef, K. Peter D

    2002-01-01

    Irradiation of sapphire with fast neutrons (0.8-10 MeV) at a fluence of 10{sup 22}/m{sup 2} increased the c-axis compressive strength and the c-plane biaxial flexure strength at 600 deg. C by a factor of {approx}2.5. Both effects are attributed to inhibition of r-plane twin propagation by damage clusters resulting from neutron impact. The a-plane biaxial flexure strength and four-point flexure strength in the c- and m-directions decreased by 10-23% at 600 deg. C after neutron irradiation. Neutron irradiation had little or no effect on thermal conductivity, infrared absorption, elastic constants, hardness, and fracture toughness. A featureless electron paramagnetic resonance signal at g=2.02 was correlated with the strength increase: This signal grew in amplitude with increasing neutron irradiation, which also increased the compressive strength. Annealing conditions that reversed the strengthening also annihilated the g=2.02 signal. A signal associated with a paramagnetic center containing two Al nuclei was not correlated with strength. Ultraviolet and visible color centers also were not correlated with strength in that they could be removed by annealing at temperatures that were too low to reverse the compressive strengthening effect of neutron irradiation.

  18. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Schwinkendorf, Jan-Patrick

    2012-08-15

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  19. Copper, lead and zinc production

    International Nuclear Information System (INIS)

    Ayers, J.; Ternan, S.

    2001-01-01

    This chapter provides information on the by-products and residues generated during the production of copper, lead and zinc. The purpose of this chapter is to describe by-products and residues which are generated, how these may be avoided or minimised, and available options for the utilization and management of residues. (author)

  20. Serum zinc level in thalassemia

    International Nuclear Information System (INIS)

    Keikhaei, B.; Badavi, M.; Pedram, M.; Zandian, K.

    2010-01-01

    To compare serum zinc level between Thalassemia Major (TM) patients and normal population at Shafa Hospital in South West of Iran. A total of 25 male and 36 female of TM patients were enrolled in this study. Out of 61 patients thirty were treated by deferroxamine (DFO) and 31 were on the combination of DFO and deferiprone (DEF) protocol therapy. Sixty normal subjects of the matching age and gender were recruited as controls. From each patient and control group 2 ml of blood was taken in fasting condition. Cell blood count and serum zinc were carried out for both thalassemia patients and normal subjects. The mean age of patients and control group was 15+- 5 years. Mean serum zinc level was 68.97+- 21.12 mu g/dl, 78.10-28.50 mu g/dl, and 80.16+- 26.54 mu g/dl in the TM with DFO, TM with DFO + DEF combination protocol and control group respectively. There was no significant correlation between patients and control group. However 50 percent of TM with DFO, 38.7 percent of TM with DFO + DEF and 32.8 percent of control group had hypozincemia. Nearly 40 to 50 percent of TM patients and one third of normal subjects are suffering from hypozincemia. This study shows that low level of serum zinc is a health problem in both thalassemia patients and normal population in South West of Iran. (author)

  1. Molybdate based passivation of zinc

    DEFF Research Database (Denmark)

    Tang, Peter Torben; Bech-Nielsen, Gregers; Møller, Per

    1997-01-01

    In order to reduce corrosion rates, zinc plated parts are usually chromated. Recently chromates have caused increasingly environmental concern, for both allergic effects among workers touching chro-mated parts and toxic effects on fish, plants and bacteria. A molybdate based alternative has been...

  2. Improved colorimetric determination of serum zinc.

    Science.gov (United States)

    Johnson, D J; Djuh, Y Y; Bruton, J; Williams, H L

    1977-07-01

    We show how zinc may easily be quantified in serum by first using an optimum concentration of guanidine hydrochloride to cause release of zinc from proteins, followed by complexation of released metals with cyanide. The cyanide complex of zinc is preferentially demasked with chloral hydrate, followed by a colorimetric reaction between zinc and 4-(2-pyridylazo)resorcinol. This is a sensitive water-soluble ligand; its complex with zinc has an absorption maximum at 497 nm. Values found by this technique compare favorably with those obtained by atomic absorption spectroscopy.

  3. Zinc-The key to preventing corrosion

    Science.gov (United States)

    Kropschot, S.J.; Doebrich, Jeff L.

    2011-01-01

    Centuries before it was identified as an element, zinc was used to make brass (an alloy of zinc and copper) and for medicinal purposes. Metallic zinc and zinc oxide were produced in India sometime between the 11th and 14th centuries and in China in the 17th century, although the discovery of pure metallic zinc is credited to the German chemist Andreas Marggraf, who isolated the element in 1746. Refined zinc metal is bluish-white when freshly cast; it is hard and brittle at most temperatures and has relatively low melting and boiling points. Zinc alloys readily with other metals and is chemically active. On exposure to air, it develops a thin gray oxide film (patina), which inhibits deeper oxidation (corrosion) of the metal. The metal's resistance to corrosion is an important characteristic in its use.

  4. Zr{sub 2}N{sub 2}Se. The first zirconium(IV) nitride selenide by the oxidation of zirconium(III) nitride with selenium

    Energy Technology Data Exchange (ETDEWEB)

    Lissner, Falk; Hack, Bettina; Schleid, Thomas [Institute for Inorganic Chemistry, University of Stuttgart (Germany); Lerch, Martin [Institute for Chemistry, Technical University of Berlin (Germany)

    2012-08-15

    The oxidation of zirconium(III) nitride (ZrN) with suitable amounts of selenium (Se) in the presence of sodium chloride (NaCl) as flux yields small yellow brownish platelets of the first zirconium(IV) nitride selenide with the composition Zr{sub 2}N{sub 2}Se. The new compound crystallizes in the hexagonal space group P6{sub 3}/mmc (no. 194) with a = 363.98(2) pm, c = 1316.41(9) pm (c/a = 3.617) and two formula units per unit cell. The crystallographically unique Zr{sup 4+} cations are surrounded by three selenide and four nitride anions in the shape of a capped trigonal antiprism. The Se{sup 2-} anions are coordinated by six Zr{sup 4+} cations as trigonal prism and the N{sup 3-} anions reside in tetrahedral surrounding of Zr{sup 4+} cations. These [NZr{sub 4}]{sup 13+} tetrahedra become interconnected via three edges each to form {sup 2}{sub ∞}{[(NZr_4_/_4)_2]"2"+} double layers parallel to the (001) plane, which are held together by monolayers of Se{sup 2-} anions. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Transport properties of Cu-doped bismuth selenide single crystals at high magnetic fields up to 60 Tesla: Shubnikov-de Haas oscillations and π-Berry phase

    Science.gov (United States)

    Romanova, Taisiia A.; Knyazev, Dmitry A.; Wang, Zhaosheng; Sadakov, Andrey V.; Prudkoglyad, Valery A.

    2018-05-01

    We report Shubnikov-de Haas (SdH) and Hall oscillations in Cu-doped high quality bismuth selenide single crystals. To increase the accuracy of Berry phase determination by means of the of the SdH oscillations phase analysis we present a study of n-type samples with bulk carrier density n ∼1019 -1020cm-3 at high magnetic field up to 60 Tesla. In particular, Landau level fan diagram starting from the value of the Landau index N = 4 was plotted. Thus, from our data we found π-Berry phase that directly indicates the Dirac nature of the carriers in three-dimensional topological insulator (3D TI) based on Cu-doped bismuth selenide. We argued that in our samples the magnetotransport is determined by a general group of carriers that exhibit quasi-two-dimensional (2D) behaviour and are characterized by topological π-Berry phase. Along with the main contribution to the conductivity the presence of a small group of bulk carriers was registered. For 3D-pocket Berry phase was identified as zero, which is a characteristic of trivial metallic states.

  6. 16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Misuse of the words âruby,â âsapphire,â... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc. (a) It is unfair or deceptive to use the unqualified words “ruby,” “sapphire...

  7. Effects of serum zinc level on tinnitus.

    Science.gov (United States)

    Berkiten, Güler; Kumral, Tolgar Lütfi; Yıldırım, Güven; Salturk, Ziya; Uyar, Yavuz; Atar, Yavuz

    2015-01-01

    The aim of this study was to assess zinc levels in tinnitus patients, and to evaluate the effects of zinc deficiency on tinnitus and hearing loss. One-hundred patients, who presented to an outpatient clinic with tinnitus between June 2009 and 2014, were included in the study. Patients were divided into three groups according to age: Group I (patients between 18 and 30years of age); Group II (patients between 31 and 60years of age); and Group III (patients between 61 and 78years of age). Following a complete ear, nose and throat examination, serum zinc levels were measured and the severity of tinnitus was quantified using the Tinnitus Severity Index Questionnaire (TSIQ). Patients were subsequently asked to provide a subjective judgment regarding the loudness of their tinnitus. The hearing status of patients was evaluated by audiometry and high-frequency audiometry. An average hearing sensitivity was calculated as the mean value of hearing thresholds between 250 and 20,000Hz. Serum zinc levels between 70 and 120μg/dl were considered normal. The severity and loudness of tinnitus, and the hearing thresholds of the normal zinc level and zinc-deficient groups, were compared. Twelve of 100 (12%) patients exhibited low zinc levels. The mean age of the zinc-deficient group was 65.41±12.77years. Serum zinc levels were significantly lower in group III (p<0.01). The severity and loudness of tinnitus were greater in zinc-deficient patients (p=0.011 and p=0.015, respectively). Moreover, the mean thresholds of air conduction were significantly higher in zinc-deficient patients (p=0.000). We observed that zinc levels decrease as age increases. In addition, there was a significant correlation between zinc level and the severity and loudness of tinnitus. Zinc deficiency was also associated with impairments in hearing thresholds. Copyright © 2015 Elsevier Inc. All rights reserved.

  8. Reactivation in vitro of zinc-requiring apo-enzymes by rat liver zinc-thionein

    OpenAIRE

    Udom, Albert O.; Brady, Frank O.

    1980-01-01

    The ability of rat liver zinc-thionein to donate its metal to the apo-enzymes of the zinc enzymes horse liver alcohol dehydrogenase, yeast aldolase, thermolysin, Escherichia coli alkaline phosphatase and bovine erythrocyte carbonic anhydrase was investigated. Zinc-thionein was as good as, or better than, ZnSO4, Zn(CH3CO2)2 or Zn(NO3)2 in donating its zinc to these apo-enzymes. Apo-(alcohol dehydrogenase) could not be reactivated by zinc salts or by zinc-thionein. Incubation of the other apo-e...

  9. Dual waveband compact catadioptric imaging spectrometer

    Science.gov (United States)

    Chrisp, Michael P.

    2012-12-25

    A catadioptric dual waveband imaging spectrometer that covers the visible through short-wave infrared, and the midwave infrared spectral regions, dispersing the visible through shortwave infrared with a zinc selenide grating and midwave infrared with a sapphire prism. The grating and prism are at the cold stop position, enabling the pupil to be split between them. The spectra for both wavebands are focused onto the relevant sections of a single dual waveband detector. Spatial keystone distortion is controlled to less than one tenth of a pixel over the full wavelength range, facilitating the matching of the spectra in the midwave infrared with the shorter wavelength region.

  10. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

    Science.gov (United States)

    Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen

    2017-09-15

    High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In 2 Se 3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In 2 Se 3 vapor and produce the high uniformity In 2 Se 3 nanowires. The in situ annealing TEM is used to realize the effect of heating

  11. New Antimony Selenide/Nickel Oxide Photocathode Boosts the Efficiency of Graphene Quantum-Dot Co-Sensitized Solar Cells.

    Science.gov (United States)

    Kolay, Ankita; Kokal, Ramesh K; Kalluri, Ankarao; Macwan, Isaac; Patra, Prabir K; Ghosal, Partha; Deepa, Melepurath

    2017-10-11

    A novel assembly of a photocathode and a photoanode is investigated to explore their complementary effects in enhancing the photovoltaic performance of a quantum-dot solar cell (QDSC). While p-type nickel oxide (NiO) has been used previously, antimony selenide (Sb 2 Se 3 ) has not been used in a QDSC, especially as a component of a counter electrode (CE) architecture that doubles as the photocathode. Here, near-infrared (NIR) light-absorbing Sb 2 Se 3 nanoparticles (NPs) coated over electrodeposited NiO nanofibers on a carbon (C) fabric substrate was employed as the highly efficient photocathode. Quasi-spherical Sb 2 Se 3 NPs, with a band gap of 1.13 eV, upon illumination, release photoexcited electrons in addition to other charge carriers at the CE to further enhance the reduction of the oxidized polysulfide. The p-type conducting behavior of Sb 2 Se 3 , coupled with a work function at 4.63 eV, also facilitates electron injection to polysulfide. The effect of graphene quantum dots (GQDs) as co-sensitizers as well as electron conduits is also investigated in which a TiO 2 /CdS/GQDs photoanode structure in combination with a C-fabric CE delivered a power-conversion efficiency (PCE) of 5.28%, which is a vast improvement over the 4.23% that is obtained by using a TiO 2 /CdS photoanode (without GQDs) with the same CE. GQDs, due to a superior conductance, impact efficiency more than Sb 2 Se 3 NPs do. The best PCE of a TiO 2 /CdS/GQDs-nS 2- /S n 2- -Sb 2 Se 3 /NiO/C-fabric cell is 5.96% (0.11 cm 2 area), which, when replicated on a smaller area of 0.06 cm 2 , is seen to increase dramatically to 7.19%. The cell is also tested for 6 h of continuous irradiance. The rationalization for the channelized photogenerated electron movement, which augments the cell performance, is furnished in detail in these studies.

  12. BWR fuel experience with zinc injection

    International Nuclear Information System (INIS)

    Levin, H.A.; Garcia, S.E.

    1995-01-01

    In 1982 a correlation between low primary recirculation system dose rates in BWR's and the presence of ionic zinc in reactor water was identified. The source of the zinc was primarily from Admiralty brass condensers. Plants with brass condensers are called ''natural zinc'' plants. Brass condensers were also a source of copper that was implicated in crude induced localized corrosion (CILC) fuel failures. In 1986 the first BWR intentionally injected zinc for the benefits of dose rate control. Although zinc alone was never implicated in fuel degradation of failures, a comprehensive fuel surveillance program was initiated to monitor fuel performance. Currently there are 14 plants that are injecting zinc. Six of these plants are also on hydrogen water chemistry. This paper describes the effect on both Zircaloy corrosion and the cruding characteristics as a result of these changes in water chemistry. Fuel rod corrosion was found to be independent of the specific water chemistry of the plants. The corrosion behavior was the same with the additions of zinc alone or zinc plus hydrogen and well within the operating experience for fuel without either of these additions. No change was observed in the amounts of crude deposited on the fuel rods, both for the adherent and loosely held deposits. One of the effects of the zinc addition was the trend to form more of the zinc rich iron spinel in the fuel deposits rather than the hematite deposits that are predominantly formed with non additive water chemistry

  13. Zinc and the modulation of redox homeostasis

    Science.gov (United States)

    Oteiza, Patricia I.

    2012-01-01

    Zinc, a redox inactive metal, has been long viewed as a component of the antioxidant network, and growing evidence points to its involvement in redox-regulated signaling. These actions are exerted through several mechanisms based on the unique chemical and functional properties of zinc. Overall, zinc contributes to maintain the cell redox balance through different mechanisms including: i) the regulation of oxidant production and metal-induced oxidative damage; ii) the dynamic association of zinc with sulfur in protein cysteine clusters, from which the metal can be released by nitric oxide, peroxides, oxidized glutathione and other thiol oxidant species; iii) zinc-mediated induction of the zinc-binding protein metallothionein, which releases the metal under oxidative conditions and act per se scavenging oxidants; iv) the involvement of zinc in the regulation of glutathione metabolism and of the overall protein thiol redox status; and v) a direct or indirect regulation of redox signaling. Findings of oxidative stress, altered redox signaling, and associated cell/tissue disfunction in cell and animal models of zinc deficiency, stress the relevant role of zinc in the preservation of cell redox homeostasis. However, while the participation of zinc in antioxidant protection, redox sensing, and redox-regulated signaling is accepted, the involved molecules, targets and mechanisms are still partially known and the subject of active research. PMID:22960578

  14. Weight of Production of Emeralds, Rubies, Sapphires, and Tanzanite from 1995 Through 2005

    Science.gov (United States)

    Yager, Thomas R.; Menzie, W. David; Olson, Donald W.

    2008-01-01

    U.S. Geological Survey (USGS) historically has not attempted to report comprehensive world production of gemstones on a country basis. This was because estimation of gemstone production is inherently difficult due to the fragmentary nature of the industry, the lack of governmental oversight or reporting in many countries where colored gemstones are mined, and the wide variation in quality between individual gemstones. Unlike diamonds, which, with the exception of the alluvial stones of West Africa, are mainly produced by large international mining companies and evaluated, cut, and marketed through a highly developed pricing structure and complex commercial arrangements, colored gemstones are mainly mined by individuals or small companies and have less developed evaluation and marketing arrangements. The trading centers for colored gems are smaller and less well known than the diamond centers. Colored gemstones, like alluvial diamonds, have the potential to be used to fund civil conflicts and other illegal activities, and because trade in colored gemstones is less organized than that of diamonds, they offer less opportunity for effective regulation of their trade. And, like diamond, until the recent advent of the Kimberley Process no generally accepted estimates of colored gemstone production globally or by producing country have existed. The present paper is a first attempt to develop production statistics for the three precious gems -emeralds, rubies, and sapphires - and tanzanite tanzanite, a semi-precious gem. The data consist of the weight of production of each of the gemstones from 1995 through 2005. Preliminary data on the weights of gemstone production were presented as a poster session at the Gemological Institute of America's Gemological Research Conference in San Diego, CA, in 2006, and as a published abstract (Yager, 2006) in an attempt to gather response to the estimates. The USGS continues to welcome information and suggestions that would improve the

  15. The growth and characterization of well aligned RuO2 nanorods on sapphire substrates

    International Nuclear Information System (INIS)

    Chen, C C; Chen, R S; Tsai, T Y; Huang, Y S; Tsai, D S; Tiong, K K

    2004-01-01

    Self-assembled and well aligned RuO 2 nanorods (NRs) have been grown on sapphire (SA) substrates via metal-organic chemical vapour deposition (MOCVD), using bis(ethylcyclopentadienyl)ruthenium as the source reagent. The surface morphology, structural, and spectroscopic properties of the as-deposited NRs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAD), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned nanorods (NRs) were grown on SA(100), while the NRs on the SA(012) were grown with a tilt angle of ∼ 35 degrees from the normal to the substrates. TEM and SAD measurements showed that the RuO 2 NRs with square cross-section have the long axis directed along the [001] direction. The XRD results indicate that the RuO 2 NRs are (002) oriented on SA(100) and (101) oriented on SA(012) substrates. A strong substrate effect on the alignment of the RuO 2 NRs growth has been demonstrated and the probable mechanism for the formation of these NRs has been discussed. XP spectra show the coexistence of higher oxidation state of ruthenium in the as-grown RuO 2 NRs. Micro-Raman spectra show the red-shift and peak broadening of the RuO 2 signatures with respect to that of the bulk counterpart which may be indicative of a phonon confinement effect for these NRs

  16. 65Zinc and endogenous zinc content and distribution in islets in relationship to insulin content

    International Nuclear Information System (INIS)

    Figlewicz, D.P.; Forhan, S.E.; Hodgson, A.T.; Grodsky, G.M.

    1984-01-01

    Uptake of 65 Zn and distribution of 65 Zn, total zinc, and insulin were measured in rat islets and islet granules under different conditions of islet culture. Specific activity of islet zinc ( 65 Zn/zinc) was less than 15% that of extracellular zinc even after 48 h. In contrast, once in the islet, 65 Zn approached 70% of equilibrium with granular zinc in 24 h and apparent equilibrium by 48 h. During a 24-h culture, at either high or low glucose, reduction of both islet zinc and insulin occurred. However, zinc depletion was greater than that predicted if zinc loss was proportional to insulin depletion and occurred only from the granular compartment, which represents only one third of the total islet zinc. Extension of culture to 48 h caused additional insulin depletion, but islet zinc was unchanged. Omission of calcium during the 48-h culture caused a predicted increase in insulin retention, presumably by inhibiting secretion; however, zinc retention was not increased proportionately. Pretreatment of rats with tolbutamide caused a massive depletion of insulin stored in isolated islets, with little change in total islet zinc; subsequent culture of these islets resulted in a greater loss of granular zinc than predicted from the small loss of granular insulin. None of the conditions tested affected the percentage of either 65 Zn or total zinc that was distributed in the islet granules. Results show that zinc exists in a metabolically labile islet compartment(s) as well as in secretory granules; and extra-granular zinc, although not directly associated with insulin storage, may act as a reservoir for granular zinc and may regulate insulin synthesis, storage, and secretion in ways as yet unknown

  17. Neodymium conversion layers formed on zinc powder for improving electrochemical properties of zinc electrodes

    International Nuclear Information System (INIS)

    Zhu Liqun; Zhang Hui; Li Weiping; Liu Huicong

    2008-01-01

    Zinc powder, as active material of secondary alkaline zinc electrode, can greatly limit the performance of zinc electrode due to corrosion and dendritic growth of zinc resulting in great capacity-loss and short cycle life of the electrode. This work is devoted to modification study of zinc powder with neodymium conversion films coated directly onto it using ultrasonic immersion method for properties improvement of zinc electrodes. Scanning electron microscopy and other characterization techniques are applied to prove that neodymium conversion layers are distributing on the surface of modified zinc powder. The electrochemical performance of zinc electrodes made of such modified zinc powder is investigated through potentiodynamic polarization, potentiostatic polarization and cyclic voltammetry. The neodymium conversion films are found to have a significant effect on inhibition corrosion capability of zinc electrode in a beneficial way. It is also confirmed that the neodymium conversion coatings can obviously suppress dendritic growth of zinc electrode, which is attributed to the amelioration of deposition state of zinc. Moreover, the results of cyclic voltammetry reveal that surface modification of zinc powder enhances the cycle performance of the electrode mainly because the neodymium conversion films decrease the amounts of ZnO or Zn(OH) 2 dissolved in the electrolyte

  18. Quadrupole interaction in zinc metal

    International Nuclear Information System (INIS)

    Vetterling, W.T.; Pound, R.V.

    1977-01-01

    To allow measurement of the quadrupole interaction in zinc metal, the enriched ZnO was reduced to zinc metal powder and compressed into a pill of thickness 1.4 gm/cm 2 . Sources were made by diffusing 20 mCi of 67 Ga into sintered copper pills. The transducer was based on a cylinder of PZT-4 with 1 / 2 -inch length and could cover linearly a velocity range of +-100 μ/s at 200 Hz. The multiscalar was a modified Northern model NS600, with a minimum dwell time of 20 μs, and with a 10-count buffer at the input to eliminate deadtime from memory cycling

  19. Zinc stannate nanostructures: hydrothermal synthesis

    International Nuclear Information System (INIS)

    Baruah, Sunandan; Dutta, Joydeep

    2011-01-01

    Nanostructured binary semiconducting metal oxides have received much attention in the last decade owing to their unique properties rendering them suitable for a wide range of applications. In the quest to further improve the physical and chemical properties, an interest in ternary complex oxides has become noticeable in recent times. Zinc stannate or zinc tin oxide (ZTO) is a class of ternary oxides that are known for their stable properties under extreme conditions, higher electron mobility compared to its binary counterparts and other interesting optical properties. The material is thus ideal for applications from solar cells and sensors to photocatalysts. Among the different methods of synthesizing ZTO nanostructures, the hydrothermal method is an attractive green process that is carried out at low temperatures. In this review, we summarize the conditions leading to the growth of different ZTO nanostructures using the hydrothermal method and delve into a few of its applications reported in the literature. (topical review)

  20. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  1. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2015-08-17

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

  2. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    International Nuclear Information System (INIS)

    Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

    2015-01-01

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

  3. Electroplated zinc-cobalt alloy

    International Nuclear Information System (INIS)

    Carpenter, D.E.O.S.; Farr, J.P.G.

    2005-01-01

    Recent work on the deposition and use of ectrodeposited zinc-cobalt alloys is surveyed. Alloys containing lower of Nuclear quantities of cobalt are potentially more useful. The structures of the deposits is related to their chemical and mechanical properties. The inclusion of oxide and its role in the deposition mechanism may be significant. Chemical and engineering properties relate to the metallurgical structure of the alloys, which derives from the mechanism of deposition. The inclusion of oxides and hydroxides in the electroplate may provide evidence for this mechanism. Electrochemical impedance measurements have been made at significant deposition potentials, in alkaline electrolytes. These reveal a complex electrode behaviour which depends not only on the electrode potential but on the Co content of the electrolyte. For the relevant range of cathodic potential zinc-cobalt alloy electrodeposition occurs through a stratified interface. The formation of an absorbed layer ZnOH/sup +/ is the initial step, this inhibits the deposition of cobalt at low cathodic potentials, so explaining its 'anomalous deposition'. A porous layer of zinc forms on the adsorbed ZnOH/sup +/ at underpotential. As the potential becomes more cathodic, cobalt co- deposits from its electrolytic complex forming a metallic solid solution of Co in Zn. In electrolytes containing a high concentration of cobalt a mixed entity (ZnCo)/sub +/ is assumed to adsorb at the cathode from which a CoZn intermetallic deposits. (author)

  4. Effects of dietary zinc status on seizure susceptibility and hippocampal zinc content in the El (epilepsy) mouse.

    Science.gov (United States)

    Fukahori, M; Itoh, M

    1990-10-08

    The effects of dietary zinc status on the development of convulsive seizures, and zinc concentrations in discrete hippocampal areas and other parts of the limbic system were studied in the El mouse model receiving zinc-adequate, zinc-deficient or zinc-loaded diets. Seizure susceptibility of the El mouse was increased by zinc deficiency, and decreased by zinc loading, while an adequate diet had no effect. Zinc loading was accompanied by a marked increase in hippocampal zinc content in the El mouse. Conversely, hippocampal zinc content declined in the El mouse fed a zinc-deficient diet. These results suggest that zinc may have a preventive effect on the development of seizures in the El mouse, and hippocampal zinc may play an important role in the pathophysiology of convulsive seizures of epilepsy.

  5. Zinc in Cellular Regulation: The Nature and Significance of "Zinc Signals".

    Science.gov (United States)

    Maret, Wolfgang

    2017-10-31

    In the last decade, we witnessed discoveries that established Zn 2+ as a second major signalling metal ion in the transmission of information within cells and in communication between cells. Together with Ca 2+ and Mg 2+ , Zn 2+ covers biological regulation with redox-inert metal ions over many orders of magnitude in concentrations. The regulatory functions of zinc ions, together with their functions as a cofactor in about three thousand zinc metalloproteins, impact virtually all aspects of cell biology. This article attempts to define the regulatory functions of zinc ions, and focuses on the nature of zinc signals and zinc signalling in pathways where zinc ions are either extracellular stimuli or intracellular messengers. These pathways interact with Ca 2+ , redox, and phosphorylation signalling. The regulatory functions of zinc require a complex system of precise homeostatic control for transients, subcellular distribution and traffic, organellar homeostasis, and vesicular storage and exocytosis of zinc ions.

  6. Effect of coating thickness on interfacial shear behavior of zirconia-coated sapphire fibers in a polycrystalline alumina matrix

    International Nuclear Information System (INIS)

    Hellmann, J.R.; Chou, Y.S.

    1995-01-01

    The effect of zirconia (ZrO 2 ) interfacial coatings on the interfacial shear behavior in sapphire reinforced alumina was examined in this study. Zirconia coatings of thicknesses ranging from 0.15 to 1.45 μm were applied to single crystal sapphire (Saphikon) fibers using a particulate loaded sol dipping technique. After calcining at 1,100 C in air, the coated fibers were incorporated into a polycrystalline alumina matrix via hot pressing. Interfacial shear strength and sliding behavior of the coated fibers was examined using thin-slice indentation fiber pushout and pushback techniques. In all cases, debonding and sliding occurred at the interface between the fibers and the coating. The coatings exhibited a dense microstructure and led to a higher interfacial shear strength (> 240 MPa) and interfacial sliding stress (> 75 MPa) relative to previous studies on the effect of a porous interphase on interfacial properties. The interfacial shear strength decreased with increasing fiber coating thickness (from 389 ± 59 to 241 ± 43 MPa for 0.15 to 1.45 microm thick coatings, respectively). Sliding behavior exhibited load modulation with increasing displacement during fiber sliding which is characteristic of fiber roughness-induced stick-slip. The high interfacial shear strengths and sliding stresses measured in this study, as well as the potentially strength degrading surface reconstruction observed on the coated fibers after hot pressing and heat treatment, indicate that dense zirconia coatings are not suitable candidates for optimizing composite toughness and strength in the sapphire fiber reinforced alumina system

  7. Zinc and immunity: An essential interrelation.

    Science.gov (United States)

    Maares, Maria; Haase, Hajo

    2016-12-01

    The significance of the essential trace element zinc for immune function has been known for several decades. Zinc deficiency affects immune cells, resulting in altered host defense, increased risk of inflammation, and even death. The micronutrient zinc is important for maintenance and development of immune cells of both the innate and adaptive immune system. A disrupted zinc homeostasis affects these cells, leading to impaired formation, activation, and maturation of lymphocytes, disturbed intercellular communication via cytokines, and weakened innate host defense via phagocytosis and oxidative burst. This review outlines the connection between zinc and immunity by giving a survey on the major roles of zinc in immune cell function, and their potential consequences in vivo. Copyright © 2016 Elsevier Inc. All rights reserved.

  8. BWR radiation buildup control with ionic zinc

    International Nuclear Information System (INIS)

    Marble, W.J.; Wood, C.J.; Leighty, C.E.; Green, T.A.

    1986-01-01

    In 1983 a hypothesis was disclosed which suggested that the presence of ionic zinc in the reactor water of the BWR could reduce radiation buildup. This hypothesis was developed from correlations of plant data, and subsequently, from laboratory experiments which demonstrated clearly that ionic zinc inhibits the corrosion of stainless steel. The benefits of zinc addition have been measured at the Vallecitos Nuclear Center under and EPRI/GE project. Experimentation and analyses have been performed to evaluate the impact of intentional zinc addition on the IGSCC characteristics of primary system materials and on the performance of the nuclear fuel. It has been concluded that no negative effects are expected. The author conclude that the intentional addition of ionic zinc to the BWR reactor water at a concentration of approximately 10 ppb will provide major benefits in controlling the Co-60 buildup on primary system stainless steel surfaces. The intentional addition of zinc is now a qualified technique for use in BWRs

  9. Parasitic lasing suppression in large-aperture Ti:sapphire amplifiers by optimizing the seed–pump time delay

    International Nuclear Information System (INIS)

    Chu, Y X; Liang, X Y; Yu, L H; Xu, L; Lu, X M; Liu, Y Q; Leng, Y X; Li, R X; Xu, Z Z

    2013-01-01

    Theoretical and experimental investigations are carried out to determine the influence of the time delay between the input seed pulse and pump pulses on transverse parasitic lasing in a Ti:sapphire amplifier with a diameter of 80 mm, which is clad by a refractive index-matched liquid doped with an absorber. When the time delay is optimized, a maximum output energy of 50.8 J is achieved at a pump energy of 105 J, which corresponds to a conversion efficiency of 47.5%. Based on the existing compressor, the laser system achieves a peak power of 1.26 PW with a 29.0 fs pulse duration. (letter)

  10. Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

    International Nuclear Information System (INIS)

    Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

    2006-01-01

    The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

  11. Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

    International Nuclear Information System (INIS)

    Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

    2004-01-01

    The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

  12. Single mode operation in a pulsed Ti:sapphire laser oscillator with a grazing-incidence four-mirror cavity

    CERN Document Server

    Ko, D K; Binks, D J; Gloster, L A W; King, T A

    1998-01-01

    We demonstrate stable single mode operation in a pulsed Ti:sapphire laser oscillator with a novel grazing-incidence four-mirror coupled cavity. This cavity consists of a grating, a gain medium, and four mirrors and, therefore, has a four-arm interferometer configuration. Through the interferometric effect, we could suppress the adjacent modes and obtain stable single mode operation with a bandwidth of < 200 MHz. We also have developed a general analysis of the laser modes and the threshold conditions for configuration and the experimental results agree well with the theoretical predictions.

  13. Directed spatial organization of zinc oxide nanostructures

    Science.gov (United States)

    Hsu, Julia [Albuquerque, NM; Liu, Jun [Richland, WA

    2009-02-17

    A method for controllably forming zinc oxide nanostructures on a surface via an organic template, which is formed using a stamp prepared from pre-defined relief structures, inking the stamp with a solution comprising self-assembled monolayer (SAM) molecules, contacting the stamp to the surface, such as Ag sputtered on Si, and immersing the surface with the patterned SAM molecules with a zinc-containing solution with pH control to form zinc oxide nanostructures on the bare Ag surface.

  14. Activity incorporation into zinc doped PWR oxides

    International Nuclear Information System (INIS)

    Maekelae, Kari

    1998-01-01

    Activity incorporation into the oxide layers of PWR primary circuit constructional materials has been studied in Halden since 1993. The first zinc injection tests showed that zinc addition resulted in thinner oxide layers on new metal surfaces and reduced further incorporation of activity into already existing oxides. These tests were continued to find out the effects of previous zinc additions on the pickup of activity onto the surface oxides which were subsequently exposed to zinc-free coolant. The results showed that previous zinc addition will continue to reduce the rate of Co-60 build-up on out-of-core surfaces in subsequent exposure to zinc-free coolants. However, the previous Zn free test was performed for a relatively short period of time and the water chemistry programme was continued to find out the long term effects for extended periods without zinc. The activity incorporation into the stainless steel oxides started to increase as soon as zinc dosing to the coolant was stopped. The Co-60 concentration was lowest on all of the coupons which were first oxidised in Zn containing primary coolant. After the zinc injection period the thickness of the oxides increased, but activity in the oxide films did not increase at the same rate. This could indicate that zinc in the oxide blocks the adsorption sites for Co-60 incorporation. The Co-60 incorporation rate into the oxides on Inconel 600 seemed to be linear whether the oxide was pre-oxidised with or without Zn. The results indicate that zinc can either replace or prevent cobalt transport in the oxides. The results show that for zinc injection to be effective it should be carried out continuously. Furthermore the actual mechanism by which Zn inhibits the activity incorporation into the oxides is still not clear. Therefore, additional work has to follow with specified materials to verify the conclusions drawn in this work. (author)

  15. Non-Chromate Passivation of Zinc

    DEFF Research Database (Denmark)

    Tang, Peter Torben; Bech-Nielsen, G.

    1993-01-01

    Phos). The treatments are within the same concentration region, and they have a mutual pat-ent pending. Although some tests still need to be conducted, the following aspects are clear at the present time: The general appearance of the passivated zinc surface is very similar to a standard yellow chromate treatment...... successfully. The corrosion resistance against white rust on zinc and zinc alloys is just as good as that of yellow chromate, although the result de-pends on the corrosion test method as well as on the nature of the zinc substrate pas-sivated. The passivation procedure is simply a dip for approxi-mately 2...

  16. Status of zinc injection in PWRs

    Energy Technology Data Exchange (ETDEWEB)

    Bergmann, C.A. [Westinghouse Electric Co., Pittsburgh, PA (United States)

    1995-03-01

    Based on laboratory and other studies, it was concluded that zinc addition in a PWR primary coolant should result in reduced Alloy 600 PWSCC and general corrosion rates of the materials of construction. Because of these positive results, a Westinghouse Owner`s Subgroup, EPRI, and Westinghouse provided funds to continue the development and application of zinc in an operating plant. As part of the program, Southern Operating Nuclear Company agreed to operate the Farley 2 plant with zinc addition as a demonstration test of the effectiveness of zinc. Since zinc is incorporated in the corrosion oxide film on the primary system surfaces and Farley 2 is a mature plant, it was estimated that about 10 kgs of zinc would be needed to condition the plant before an equilibrium value in the coolant would be reached. The engineered aspects of a Zinc Addition and Monitoring System (ZAMS) considered such items as the constitutents, location, sizing and water supply of the ZAMS. Baseline data such as the PWSCC history of the Alloy 600 steam generator tubing, fuel oxide thickness, fuel crud deposits, radiation levels, and RCP seal leak-off rates were obtained before zinc addition is initiated. This presentation summarizes some of the work performed under the program, and the status of zinc injection in the Farley 2 plant.

  17. Zinc absorption in inflammatory bowel disease

    International Nuclear Information System (INIS)

    Valberg, L.S.; Flanagan, P.R.; Kertesz, A.; Bondy, D.C.

    1986-01-01

    Zinc absorption was measured in 29 patients with inflammatory bowel disease and a wide spectrum of disease activity to determine its relationship to disease activity, general nutritional state, and zinc status. Patients with severe disease requiring either supplementary oral or parenteral nutrition were excluded. The mean 65ZnCl2 absorption, in the patients, determined using a 65Zn and 51Cr stool-counting test, 45 +/- 17% (SD), was significantly lower than the values, 54 +/- 16%, in 30 healthy controls, P less than 0.05. Low 65ZnCl2 absorption was related to undernutrition, but not to disease activity in the absence of undernutrition or to zinc status estimated by leukocyte zinc measurements. Mean plasma zinc or leukocyte zinc concentrations in patients did not differ significantly from controls, and only two patients with moderate disease had leukocyte zinc values below the 5th percentile of normal. In another group of nine patients with inflammatory bowel disease of mild-to-moderate severity and minimal nutritional impairment, 65Zn absorption from an extrinsically labeled turkey test meal was 31 +/- 10% compared to 33 +/- 7% in 17 healthy controls, P greater than 0.1. Thus, impairment in 65ZnCl2 absorption in the patients selected for this study was only evident in undernourished persons with moderate or severe disease activity, but biochemical evidence of zinc deficiency was uncommon, and clinical features of zinc depletion were not encountered

  18. Maternal Zinc Intakes and Homeostatic Adjustments during Pregnancy and Lactation

    Science.gov (United States)

    Donangelo, Carmen Marino; King, Janet C.

    2012-01-01

    Zinc plays critical roles during embryogenesis, fetal growth, and milk secretion, which increase the zinc need for pregnancy and lactation. Increased needs can be met by increasing the dietary zinc intake, along with making homeostatic adjustments in zinc utilization. Potential homeostatic adjustments include changes in circulating zinc, increased zinc absorption, decreased zinc losses, and changes in whole body zinc kinetics. Although severe zinc deficiency during pregnancy has devastating effects, systematic reviews and meta-analysis of the effect of maternal zinc supplementation on pregnancy outcomes have consistently shown a limited benefit. We hypothesize, therefore, that zinc homeostatic adjustments during pregnancy and lactation improve zinc utilization sufficiently to provide the increased zinc needs in these stages and, therefore, mitigate immediate detrimental effects due to a low zinc intake. The specific questions addressed are the following: How is zinc utilization altered during pregnancy and lactation? Are those homeostatic adjustments influenced by maternal zinc status, dietary zinc, or zinc supplementation? These questions are addressed by critically reviewing results from published human studies on zinc homeostasis during pregnancy and lactation carried out in different populations worldwide. PMID:22852063

  19. Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

    International Nuclear Information System (INIS)

    Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

    1986-01-01

    This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

  20. Structural characterization of AgGaTe{sub 2} layers grown on a- and c-sapphire substrates by a closed space sublimation method

    Energy Technology Data Exchange (ETDEWEB)

    Uruno, Aya; Usui, Ayaka [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2014-07-15

    AgGaTe{sub 2} layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe{sub 2} layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag{sub 5}Te{sub 3} was formed along with the AgGaTe{sub 2} when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe{sub 2} without Ag{sub 5}Te{sub 3} layers could be grown on a-plane sapphire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)