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Sample records for sapphire zinc selenide

  1. Amphoteric properties of gold in zinc selenide

    Energy Technology Data Exchange (ETDEWEB)

    Avdonin, A.N. [Department of Physics, State University of Moldova, A. Mateevich Street 60, MD-2009 Kishinev (Moldova, Republic of); Ivanova, G.N. [Department of Physics, State University of Moldova, A. Mateevich Street 60, MD-2009 Kishinev (Moldova, Republic of); Nedeoglo, D.D. [Department of Physics, State University of Moldova, A. Mateevich Street 60, MD-2009 Kishinev (Moldova, Republic of)]. E-mail: nedeoglo@usm.md; Nedeoglo, N.D. [Department of Physics, State University of Moldova, A. Mateevich Street 60, MD-2009 Kishinev (Moldova, Republic of); Sirkeli, V.P. [Department of Physics, State University of Moldova, A. Mateevich Street 60, MD-2009 Kishinev (Moldova, Republic of)

    2005-08-01

    Hall effect, electric conductivity, and charge carriers mobility in n-ZnSe single crystals doped with gold during the process of a long-term high-temperature annealing in Zn+Au melt with various Au contents were investigated in the temperature range from 77 to 300 K. It has been established that, at low gold concentration, Au atoms form mainly donor-type interstitial Au{sub i} defects. The increase of Au concentration in Zn+Au melt leads to the formation of both simple Au{sub Zn} defects and associative acceptors (Au{sub Zn}-Au{sub i}) (Au{sub Zn}-D{sub Zn}), and (Au{sub Zn}-V{sub Se}). These defects determine electrical properties of the crystals and they are responsible for the complex structure of excitonic and impurity radiation spectra. The influence of dopant concentration on both electrical and luminescent properties of n-ZnSe:Zn:Au crystals is investigated. The observed variations of electrical and luminescent properties are due to amphoteric properties of gold impurity in zinc selenide.

  2. Strong quantum confinement effects in thin zinc selenide films

    Science.gov (United States)

    Baskoutas, S.; Poulopoulos, P.; Karoutsos, V.; Angelakeris, M.; Flevaris, N. K.

    2006-01-01

    Thin Zinc Selenide films in the thickness range 3-50 nm have been prepared on high quality glass substrates by e-beam evaporation under ultrahigh vacuum conditions. Optical absorption spectroscopy experiments reveal a systematically increasing blue shift of the effective bandgap energy as the film thickness decreases, reaching a maximum value of 0.32 eV for the thinner film. The experimental results, which indicate the presence of strong quantum confinement effects, are fairly well described by theoretical calculations based on the potential morphing method, using as a confining potential the finite square well potential with height of the barriers equal to 5 eV.

  3. Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films

    Science.gov (United States)

    Simi, S.; Navas, I.; Vinodkumar, R.; Chalana, S. R.; Gangrade, Mohan; Ganesan, V.; Pillai, V. P. Mahadevan

    2011-09-01

    Zinc nitride (Zn 3N 2) thin films are prepared using pulsed laser deposition (PLD) from zinc selenide (ZnSe) target at different nitrogen ambient pressures viz. 1, 3, 5, 7 and 10 Pa. The films prepared with nitrogen pressures 1 and 3 Pa are amorphous in nature, whereas the films prepared at 5, 7 and 10 Pa exhibit the presence of cubic bixbyite Zn 3N 2 structure with lattice parameter very close to bulk of Zn 3N 2. The particle size calculated by Debye Scherrer's formula is in the nano regime. Surface morphology of the films is studied by SEM and AFM analysis. Optical parameters such as band gap, refractive index and porosity of the films are calculated. Moreover, the present study confers an outlook about how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition.

  4. Semiconducting thin films of zinc selenide quantum dots

    Science.gov (United States)

    Pejova, Biljana; Tanuševski, Atanas; Grozdanov, Ivan

    2004-12-01

    A novel chemical route for deposition of zinc selenide quantum dots in thin film form is developed. The deposited films are characterized with very high purity in crystallographic sense, and behave as typical intrinsic semiconductors. Evolution of the average crystal size, lattice constant, lattice strain and the optical properties of the films upon thermal treatment is followed and discussed. The band gap energy of as-deposited ZnSe films is blue-shifted by ≈0.50 eV with respect to the bulk value, while upon annealing treatment it converges to 2.58 eV. Two discrete electronic states which originate from the bulk valence band are observed in the UV-VIS spectra of ZnSe 3D quantum dots deposited in thin film form via allowed electronic transitions to the 1 S electronic state arising from the bulk conduction band—appearing at 3.10 and 3.50 eV. The splitting between these two states is approximately equal to the spin-orbit splitting in the case of bulk ZnSe. The electronic transitions in the case of non-quantized annealed films are discussed in terms of the direct allowed band-to-band transitions with the spin-orbit splitting of the valence band of 0.40 eV. The effective mass approximation model (i.e., the Brus model) with the static relative dielectric constant of bulk ZnSe fails to predict correctly the size dependence of the band gap energy, while only a slight improvement is obtained when the hyperbolic band model is applied. However, when substantially smaller value for ɛr (2.0 instead of 8.1) is used in the Brus model, an excellent agreement with the experimental data is obtained, which supports some earlier indications that the quantum dots ɛr value could be significantly smaller than the bulk material value. The ionization energy of a deep donor impurity level calculated on the basis of the temperature dependence of the film resistivity is 0.82 eV at 0 K.

  5. Optical and morphological characteristics of zinc selenide-zinc sulfide solid solution crystals

    Science.gov (United States)

    Singh, N. B.; Su, Ching-Hua; Arnold, Bradley; Choa, Fow-Sen

    2016-10-01

    Experiments were performed to study the effect of point defects on the optical and morphological characteristics of zinc selenide-zinc sulfide ZnSe-ZnS (ZnSexS(1-x)) solid solution crystals grown under terrestrial (1-g) condition. We used the composition ZnSe0.91S0.09 and ZnSe0.73S0.27 for the detailed studies. Crystals of 8 mm and 12 mm diameter were grown using physical vapor transport methods. These crystals did not exhibit gross defects such as voids, bubbles or precipitates. The photoluminescence spectra indicated strong red emission for the 610-630-nm wavelength region in both crystals. This emission could be explained on the basis of high energy irradiation of Zn selenide. For the ZnSe0.73S0.27 crystal, absorption starts at a lower wavelength range (300 nm) when compared to the ZnSe0.91S0.09 crystal presumably due to the much higher bandgap of ZnS than that of ZnSe. Sharp peaks at 451 and 455 nm were observed for both samples corresponding to the band edge transitions, followed by a strong peak at 632 nm. These results were consistent with the observations based on Raman spectroscopy studies. Under 532-nm laser illumination both transverse optical (TO) and longitudinal optical (LO) phonon peaks appeared at Raman shifts of 220 and 280 Δcm-1, respectively. These peaks are similar to those observed for pure ZnSe Raman spectra for which TO and LO occur at 200 and 250 Δcm-1 for the x-axis (first order) polarization.

  6. Spectroscopic ellipsometry studies on vacuum-evaporated zinc selenide thin film

    Science.gov (United States)

    Gao, Weidong

    2009-05-01

    Optical constants of vacuum-deposited Zinc selenide (ZnSe) film from far infrared to near ultraviolet spectral region (270nm-30μm) have been determined by variable angle spectroscopic ellipsometry. The surface roughness layer and interface layer between ZnSe film and crystalline silicon have been modeled with Bruggeman effective medium approximation (BEMA). To evaluate the microstructure of ZnSe film, X-ray diffraction (XRD) measurements are also performed.

  7. Study of Linear and Non-Linear Optical Parameters of Zinc Selenide Thin Film

    OpenAIRE

    Desai, H. N.; J. M. Dhimmar

    2015-01-01

    Thin film of Zinc Selenide (ZnSe) was deposited onto transparent glass substrate by thermal evaporation technique. ZnSe thin film was characterized by UV-Visible spectrophotometer within the wavelength range of 310 nm-1080 nm. The Linear optical parameters (linear optical absorption, extinction coefficient, refractive index and complex dielectric constant) of ZnSe thin film were analyzed from absorption spectra. The optical band gap and Urbach energy were obtained by Tauc’s equati...

  8. Novel chemical synthetic route and characterization of zinc selenide thin films

    Science.gov (United States)

    Hankare, P. P.; Chate, P. A.; Delekar, S. D.; Asabe, M. R.; Mulla, I. S.

    2006-11-01

    Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap ‘Eg’ for the film was found to be 2.81 eV and electrical conductivity in the order of 10-8(Ω cm)-1 with n-type conduction mechanism.

  9. Influence of the chromium and ytterbium co-doping on the photoluminescence of zinc selenide crystals

    Institute of Scientific and Technical Information of China (English)

    I Radevici

    2014-01-01

    The luminescent properties of ZnSe, ZnSe:Cr (0.05 at.%Cr), ZnSe:Yb (0.03 at.%Yb) and ZnSe:Cr:Yb (0.05 at.%Cr, 0.05 at.%Yb) crystals, doped during the growth process by the chemical vapor transport method, were studied within the temperature in-terval of 6-300 K. At the 6 K temperature in the visible spectral range 2 bands were observed:a band in the excitonic spectral region and a band of self-activated luminescence. It was shown that co-doping of zinc selenide crystals with the chromium and ytterbium led to the combination of the impurities influence on the photoluminescent properties. At the liquid helium temperature in the middle in-frared range of the spectra of the ytterbium and chromium co-doped crystal a band with the maximum localized at 1.7 µm was ob-served, which was overlapped with a complex band in the middle-IR spectral range, characteristic for the chromium doped ZnSe crys-tals. On the basis of obtained data an interaction mechanism of the chromium and ytterbium co-doping impurities was proposed. Guided by the existent model of the ytterbium ion incorporation in the selenide sublattice of the ZnSe crystals, an assumption about stabilization of single charged chromium ions in the zinc sublattice crystal nodes, by means of formation of the local charge compen-sating clusters, was made. It was assumed that the resonant energy transfer from one chromium ion to another, which led to the con-centration quenching of the IR emission in the ZnSe:Cr PL spectra, would lead to the broadening of the IR emission in the spectra of ytterbium and chromium co-doped zinc selenide crystals.

  10. Ablation and ultrafast dynamics of zinc selenide under femtosecond laser irradiation

    Institute of Scientific and Technical Information of China (English)

    Xiaofeng Wang; Tianqing Jia; Xiaoxi Li; Chengbin Li; Donghai Feng; Haiyi Sun; Shizhen Xu; Zhizhan Xu

    2005-01-01

    The ablation in zinc selenide (ZnSe) crystal is studied by using 150-fs, 800-nm laser system. The images of the ablation pit measured by scanning electronic microscope (SEM) show no thermal stress and melting dynamics. The threshold fluence is measured to be 0.7 J/cm2. The ultrafast ablation dynamics is studied by using pump and probe method. The result suggests that optical breakdown and ultrafast melting take place in ZnSe irradiated under femtosecond laser pulses.

  11. PROPERTIES AND OPTICAL APPLICATION OF POLYCRYSTALLINE ZINC SELENIDE OBTAINED BY PHYSICAL VAPOR DEPOSITION

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    A. A. Dunaev

    2015-05-01

    Full Text Available Findings on production technology, mechanical and optical properties of polycrystalline zinc selenide are presented. The combination of its physicochemical properties provides wide application of ZnSe in IR optics. Production technology is based on the method of physical vapor deposition on a heated substrate (Physical Vapor Deposition - PVD. The structural features and heterogeneity of elemental composition for the growth surfaces of ZnSe polycrystalline blanks were investigated using CAMEBAX X-ray micro-analyzer. Characteristic pyramid-shaped crystallites were recorded for all growth surfaces. The measurements of the ratio for major elements concentrations show their compliance with the stoichiometry of the ZnSe compounds. Birefringence, optical homogeneity, thermal conductivity, mechanical and optical properties were measured. It is established that regardless of polycrystalline condensate columnar and texturing, the optical material is photomechanically isotropic and homogeneous. The actual performance of parts made of polycrystalline optical zinc selenide in the thermal spectral ranges from 3 to 5 μm and from 8 to 14 μm and in the CO2 laser processing plants with a power density of 500 W/cm2 is shown. The developed technology gives the possibility to produce polycrystalline optical material on an industrial scale.

  12. Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Grabowska, J.; Rajendra Kumar, R.T. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); McGlynn, E. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)], E-mail: enda.mcglynn@dcu.ie; Nanda, K.K. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); Newcomb, S.B. [Glebe Scientific Ltd., Newport, Co. Tipperary (Ireland); McNally, P.J.; O' Reilly, L. [School of Electronic Engineering/Research Institute for Networks and Communications Engineering, Dublin City University (Ireland); Mosnier, J.-P.; Henry, M.O. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)

    2008-02-29

    Epitaxially ordered zinc aluminate domains with sub-micron dimensions are formed on bare c-sapphire substrates using a vapour phase method (with vapour generated by carbothermal reduction of ZnO) at various temperatures and growth durations. A zinc aluminate (ZnAl{sub 2}O{sub 4}) layer is formed by reaction of the source materials (Zn and O) with the substrate. We observe crystallites with a well-defined epitaxial relationship on the sapphire substrate in addition to polycrystalline material. The epitaxially oriented deposit displays the form of characteristically twinned (singly or multiply) grains of sub-micron dimensions with three variants, consistent with the c-sapphire substrate symmetry. Scanning electron microscopy and transmission electron microscopy studies show that the formation of these grains is associated with the presence of extended defects in the sapphire substrate. Epitaxially ordered grains formed at higher temperatures show a change in the nature of the twin boundaries and epitaxial relations as a function of growth time, attributed to the effects of annealing during growth.

  13. The development of 6.7% efficient copper zinc indium selenide devices from copper zinc indium sulfide nanocrystal inks

    Science.gov (United States)

    Graeser, Brian K.

    As solar cell absorber materials, alloys of CuIn(S,Se)2 and Zn(S,Se) provide an opportunity to reduce the usage of indium along with the ability to tune the band gap. Here we report successful synthesis of alloyed (CuInS2)0.5(ZnS)0.5 nanocrystals by a method that solely uses oleylamine as the liquid medium for synthesis. The reactive sintering of a thin film of these nanocrystals via selenization at 500 °C results in a uniform composition alloy (CuIn(S,Se)2)0.5(Zn(S,Se)) 0.5 layer with micron size grains. Due to the large amount of zinc in the film, the sintered grains exhibit the zinc blende structure instead of the usual chalcopyrite structure of CuIn(S,Se)2 films. The use of the selenide films as a p-type absorber layer has yielded solar cells with total area power conversion efficiencies as high as 6.7% (7.4% based on active area). These preliminary results are encouraging and indicate that with further optimization this class of materials has promise as the absorber layer in solar cells.

  14. Highly efficient copper-zinc-tin-selenide (CZTSe) solar cells by electrodeposition.

    Science.gov (United States)

    Jeon, Jong-Ok; Lee, Kee Doo; Seul Oh, Lee; Seo, Se-Won; Lee, Doh-Kwon; Kim, Honggon; Jeong, Jeung-hyun; Ko, Min Jae; Kim, BongSoo; Son, Hae Jung; Kim, Jin Young

    2014-04-01

    Highly efficient copper-zinc-tin-selenide (Cu2ZnSnSe4 ; CZTSe) thin-film solar cells are prepared via the electrodepostion technique. A metallic alloy precursor (CZT) film with a Cu-poor, Zn-rich composition is directly deposited from a single aqueous bath under a constant current, and the precursor film is converted to CZTSe by annealing under a Se atmosphere at temperatures ranging from 400 °C to 600 °C. The crystallization of CZTSe starts at 400 °C and is completed at 500 °C, while crystal growth continues at higher temperatures. Owing to compromises between enhanced crystallinity and poor physical properties, CZTSe thin films annealed at 550 °C exhibit the best and most-stable device performances, reaching up to 8.0 % active efficiency; among the highest efficiencies for CZTSe thin-film solar cells prepared by electrodeposition. Further analysis of the electronic properties and a comparison with another state-of-the-art device prepared from a hydrazine-based solution, suggests that the conversion efficiency can be further improved by optimizing parameters such as film thickness, antireflection coating, MoSe2 formation, and p-n junction properties.

  15. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

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    V. Naval

    2010-01-01

    Full Text Available Wide-bandgap semiconductors such as zinc selenide (ZnSe have become popular for ultraviolet (UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm and UV-B (280–320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

  16. Study of Linear and Non-Linear Optical Parameters of Zinc Selenide Thin Film

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    H. N. Desai

    2015-06-01

    Full Text Available Thin film of Zinc Selenide (ZnSe was deposited onto transparent glass substrate by thermal evaporation technique. ZnSe thin film was characterized by UV-Visible spectrophotometer within the wavelength range of 310 nm-1080 nm. The Linear optical parameters (linear optical absorption, extinction coefficient, refractive index and complex dielectric constant of ZnSe thin film were analyzed from absorption spectra. The optical band gap and Urbach energy were obtained by Tauc’s equation. The volume and surface energy loss function of ZnSe thin film were obtained by complex dielectric constant. The Dispersion parameters (dispersion energy, oscillation energy, moment of optical dispersion spectra, static dielectric constant and static refractive index were calculated using theoretical Wemple-DiDomenico model. The oscillation strength, oscillator wavelength, high frequency dielectric constant and high frequency refractive index were calculated by single Sellmeier oscillator model. Also, Lattice dielectric constant, N/m* and plasma resonance frequency were obtained. The electronic polarizibility of ZnSe thin film was estimated by Clausius-Mossotti local field polarizibility. The nonlinear optical parameters (non-linear susceptibility and non-linear refractive index were estimated.

  17. Band gap engineering of zinc selenide thin films through alloying with cadmium telluride.

    Science.gov (United States)

    Al-Kuhaili, M F; Kayani, A; Durrani, S M A; Bakhtiari, I A; Haider, M B

    2013-06-12

    This work investigates band gap engineering of zinc selenide (ZnSe) thin films. This was achieved by mixing ZnSe with cadmium telluride (CdTe). The mass ratio (x) of CdTe in the starting material was varied in the range x = 0-0.333. The films were prepared using thermal evaporation. The chemical composition of the films was investigated through energy dispersive spectroscopy and Rutherford backscattering spectrometry. Structural analysis was carried out using X-ray diffraction and atomic force microscopy. Normal incidence transmittance and reflectance were measured over the wavelength range 300-1300 nm. The absorption coefficients and band gaps were determined from these spectrophotometric measurements. The band gap monotonically decreased from 2.58 eV (for x = 0) to 1.75 eV (for x = 0.333). Photocurrent measurements indicated that the maximum current density was obtained for films with x = 0.286. A figure of merit, based on crystallinity, band gap, and photocurrent, was defined. The optimum characteristics were obtained for the films with x = 0.231, for which the band gap was 2.14 eV.

  18. MBE-VLS grown zinc selenide and zinc sulfide nanowires: Growth mechanisms and photoluminescence properties

    Science.gov (United States)

    Chan, Siu Keung

    demonstrated in this study. This array shows a high degree of ordering and a good size uniformity of the as-grown NWs. The diameter of the NWs in the array is around 80nm and most of them were found to orient vertically but some tilt to one of the six possible directions of the direction family. ZnS NWs fabricated on a sapphire substrate at growth temperature of 430°C were found to mainly consist of the cubic phase but a little portion is in the hexagonal phase. The analysis of the temperature-dependent band-edge emission of these NWs and that of a ZnS thin film reveals that the energy shift of the interband transition on temperature in ZnS is mainly attributed to the electron-phonon interactions. The observed blue-shift of the band-edge emission of ZnS NWs could be quantitatively explained by the confinement of the excited excitons in the NW geometry.

  19. Design and fabrication of anti-reflection coating on Gallium Phosphide, Zinc Selenide and Zinc Sulfide substrates for visible and infrared application

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    Mokrý P.

    2013-05-01

    Full Text Available Results of design and fabrication of a dual-band anti-reflection coating on a gallium phosphide (GaP, zinc selenide (ZnSe and zinc sulfide (ZnS substrates are presented. A multilayer stack structure of antireflection coatings made of zinc sulfide and yttrium fluoride (YF3 was theoretically designed for optical bands between 0.8 and 0.9 μm and between 9.5 and 10.5 μm. This stack was designed as efficient for these materials (GaP, ZnS, ZnSe together. Multilayer stack structure was deposited using thermal evaporation method. Theoretically predicted transmittance spectra were compared with transmitted spectra measured on coated substrates. Efficiency of anti-reflection coating is estimated and discrepancies are analyzed and discussed.

  20. Investigation of the ablation of zinc oxide thin films on copper-indium-selenide layers by ps laser pulses

    Science.gov (United States)

    Heise, Gerhard; Dickmann, Marcel; Domke, Matthias; Heiss, Andreas; Kuznicki, Thomas; Palm, Jörg; Richter, Isabel; Vogt, Helmut; Huber, Heinz P.

    2011-07-01

    The selective laser structuring of zinc oxide thin films, which serve as the transparent negative electrodes of copper-indium-selenide (CIS) thin film solar cells, is of great common interest as it can replace the mechanical scribing of the so-called pattern 3 (P3) process step for the monolithic serial interconnection of these cells. We present an investigation of the single-pulse ablation behavior of zinc oxide thin films on glass substrates and on CIS layers and of trench scribing with 10-ps laser pulses at 1064 nm and at 532 nm. We show that the ablation behavior strongly depends on the properties of the underling substrate and that the energy required to ablate a specific volume using induced laser processes (often referred to as `lift off') is considerably reduced compared to the direct ablation of zinc oxide. With laser powers below 2 W at a wavelength of 1064 nm process speeds of 6 m/s for the P3 process have been achieved.

  1. Production of 82Se enriched Zinc Selenide (ZnSe) crystals for the study of neutrinoless double beta decay

    Science.gov (United States)

    Dafinei, I.; Nagorny, S.; Pirro, S.; Cardani, L.; Clemenza, M.; Ferroni, F.; Laubenstein, M.; Nisi, S.; Pattavina, L.; Schaeffner, K.; di Vacri, M. L.; Boyarintsev, A.; Breslavskii, I.; Galkin, S.; Lalayants, A.; Rybalka, I.; Zvereva, V.; Enculescu, M.

    2017-10-01

    High purity Zinc Selenide (ZnSe) crystals are produced starting from elemental Zn and Se to be used for the search of the neutrinoless double beta decay (0νDBD) of 82Se. In order to increase the number of emitting nuclides, enriched 82Se is used. Dedicated production lines for the synthesis and conditioning of the Zn82Se powder in order to make it suitable for crystal growth were assembled compliant with radio-purity constraints specific to rare event physics experiments. Besides routine check of impurities concentration, high sensitivity measurements are made for radio-isotope concentrations in raw materials, reactants, consumables, ancillaries and intermediary products used for ZnSe crystals production. Indications are given on the crystals perfection and how it is achieved. Since very expensive isotopically enriched material (82Se) is used, a special attention is given for acquiring the maximum yield in the mass balance of all production stages. Production and certification protocols are presented and resulting ready-to-use Zn82Se crystals are described.

  2. Influence of substrate temperature on the structural, optical and electrical properties of zinc selenide (ZnSe) thin films

    Science.gov (United States)

    Venkatachalam, S.; Mangalaraj, D.; Narayandass, Sa K.

    2006-11-01

    Zinc selenide (ZnSe) thin films were deposited onto well cleaned silicon (100) and glass substrates at different substrate temperatures (483-589 K) using vacuum evaporation method under a vacuum of 4 × 10-3 Pa. The compositions of the deposited films were determined by Rutherford backscattering spectrometry and the percentage of iodine concentration is calculated as (ZnSe)I0.001. The x-ray diffractograms reveal the cubic structure of the film oriented along the (111) direction. In optical studies, the transition of the deposited film is found to be a direct allowed transition. The optical energy gaps of the deposited films are found to be in the range from 2.72 to 2.60 eV. ZnSe/silicon Schottky diodes were fabricated. From the current-voltage measurement the ideality factor was found to be in the range 2.01-3.51. From the capacitance-voltage studies, the built in potential was found to be 1.51 V. The values of effective carrier concentration (NA) and the barrier height are calculated as 4.37 × 1011 cm-3 and 1.95 eV, respectively.

  3. Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

    Science.gov (United States)

    Williams, J. E.; Camata, R. P.; Fedorov, V. V.; Mirov, S. B.

    2008-05-01

    We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2 2.6 μm spectral range.

  4. Preparation and Properties of Zinc Doped Cadmium Selenide Compounds by E-Beam Evaporation

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    N.J. Suthan Kissinger

    2011-01-01

    Full Text Available Cd1 – xZnxSe films with different zinc content were deposited by electron beam evaporation technique onto glass substrates for the application of solid-state photovoltaic devices. The structural, surface morphological and optical properties of Cd1 – xZnxSe films have been studied in the present work. The host material,Cd1 – xZnxSe, have been prepared by the physical vapor deposition method of electron beam evaporation technique (PVD: EBE under a pressure of 1 × 10 – 5 mbar. The X-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along (002 direction. Linear variation of lattice constant with composition (x is observed. The optical properties shows that the band gap (Eg values varies from 2.08 to 2.64 eV as zinc content varies from 0.2 to 0.8. The surface morphological studies show the very small, fine and hardly distinguishable grains smeared all over the surface. It is observed that the grain size is decreasing with increasing zinc content.

  5. Novel Syntheses of Aryl and Benzyl Selenides Promted by Metallic Zinc in Aqueous Media

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    @@ Introduction Recently, organometallic-type of reactions in aqueous media have attracted a considerable interest in organic syntheses[1-4]. The main advantage of making organometallic reactions in strictly anhydrous organic solvents took place in aqueous media is the ease of the reactions so as to obviate the need for inflammable anhydrous organic solvents and troublesome inert atmosphere. For some reactions, e.g., the alkylations of the carbonyl group in carbohydrates didnt need to be altered to take place in organic solvents[5]. The most commonly used metals are zinc, tin and indium[1-4].

  6. Development of high-efficiency solar cells on copper indium selenide single crystals (cadmium sulfide, zinc oxide)

    Energy Technology Data Exchange (ETDEWEB)

    Yip, Lap Sum

    1996-12-31

    Photovoltaic cells with a ZnO/CdS/CuInSe{sub 2} structure were fabricated on bulk CuInSe{sub 2} substrates. Conversion efficiencies of more than or near 10 per cent were obtained on cells with an active area and without the use of antireflection coating. Copper indium selenide single crystals can be used as absorbers in thin film solar cells. In this study, the single crystals were grown by a horizontal Bridgman method. An annealing of the CuInSe{sub 2} substrate before the CdS deposition was found to be essential in obtaining high photovoltaic performance.

  7. Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper-indium-gallium-selenide solar cell efficiency

    Science.gov (United States)

    Hsieh, Tsung-Min; Lue, Shingjiang Jessie; Ao, Jianping; Sun, Yun; Feng, Wu-Shiung; Chang, Liann-Be

    2014-01-01

    Zinc oxysulfide (Zn(S,O)) thin films are fabricated using a chemical bath deposition method onto glass substrates and the surface of copper-indium-gallium-selenide (CIGS) adsorption layers for solar cell fabrication. The light and electric properties of the Zn(S,O) layers are improved after rapid thermal annealing (RTA). The Zn(S,O) properties of samples annealed under various atmospheres are compared. The resulting annealed Zn(S,O) films are 80-100 nm thick. The band gap decreases from 3.8 eV to 3.3 eV and the light transmittance is improved by more than 95% after annealing under oxygen atmosphere. The oxygen-annealed sample has a S/(S + O) ratio of 0.28 and a S/Zn ratio of 0.72. The CIGS solar cell that consists of the annealed Zn(S,O) buffer layer is more efficient (6.15%) than that of the non-annealed Zn(S,O) (4.56%). The solar cell performance is correlated with the deposited Zn(S,O) characteristics. The significantly higher carrier concentration, increases light transmittance, and improves crystalline structure of the oxygen-annealed Zn(S,O) film contributes to the improved cell performance.

  8. Optical phonons in nanostructured thin films composed by zincblende zinc selenide quantum dots in strong size-quantization regime: Competition between phonon confinement and strain-related effects

    Energy Technology Data Exchange (ETDEWEB)

    Pejova, Biljana, E-mail: biljana@pmf.ukim.mk

    2014-05-01

    Raman scattering in combination with optical spectroscopy and structural studies by X-ray diffraction was employed to investigate the phonon confinement and strain-induced effects in 3D assemblies of variable-size zincblende ZnSe quantum dots close packed in thin film form. Nanostructured thin films were synthesized by colloidal chemical approach, while tuning of the nanocrystal size was enabled by post-deposition thermal annealing treatment. In-depth insights into the factors governing the observed trends of the position and half-width of the 1LO band as a function of the average QD size were gained. The overall shifts in the position of 1LO band were found to result from an intricate compromise between the influence of phonon confinement and lattice strain-induced effects. Both contributions were quantitatively and exactly modeled. Accurate assignments of the bands due to surface optical (SO) modes as well as of the theoretically forbidden transverse optical (TO) modes were provided, on the basis of reliable physical models (such as the dielectric continuum model of Ruppin and Englman). The size-dependence of the ratio of intensities of the TO and LO modes was studied and discussed as well. Relaxation time characterizing the phonon decay processes in as-deposited samples was found to be approximately 0.38 ps, while upon post-deposition annealing already at 200 °C it increases to about 0.50 ps. Both of these values are, however, significantly smaller than those characteristic for a macrocrystalline ZnSe sample. - Graphical abstract: Optical phonons in nanostructured thin films composed by zincblende zinc selenide quantum dots in strong size-quantization regime: competition between phonon confinement and strain-related effects. - Highlights: • Phonon confinement vs. strain-induced effects in ZnSe 3D QD assemblies were studied. • Shifts of the 1LO band result from an intricate compromise between the two effects. • SO and theoretically forbidden TO modes were

  9. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  10. Thermal Conductance through Sapphire-Sapphire Bonding

    Science.gov (United States)

    Suzuki, T.; Tomaru, T.; Haruyama, T.; Shintomi, T.; Uchinyama, T.; Miyoki, S.; Ohashi, M.; Kuroda, K.

    2003-07-01

    Thermal conductance on sapphire-sapphire bonded interface has been investigated. Two pieces of single crystal sapphire bar with square cross section were bonded together by adhesion free bonding. In two sections of the bar, thermal conductivity was measured between 5 K to 300K. One section contains a bonded interface and the other section measured a thermal conductivity of the sapphire as a reference. No significant thermal resistance due to bonded interface was found from this measurement. Obtained thermal conductivity reaches κ 1 × 104 [W/m·K] in temperature range of T = 20 ˜ 30 K which is a planned operating temperature of a cryogenic mirror of the Large scale Cryogenic Gravitational wave telescope. It looks promising for sapphire bonding technique to improve a heat transfer from a large cryogenic mirror to susp ension wires.

  11. Retrograde tracing of zinc-enriched (ZEN) neuronal somata in rat spinal cord

    DEFF Research Database (Denmark)

    Wang, Zhanyou; Danscher, G; Mook Jo, S

    2001-01-01

    The zinc selenide autometallographic (ZnSeAMG) technique for tracing the retrograde axonal transport of zinc ions in zinc-enriched (ZEN) neurons was used to map the distribution of ZEN neuronal somata in rat spinal cord. After a local injection of sodium selenide into the dorsal or ventral horn, ZnSe...

  12. Zinc

    Science.gov (United States)

    ... slow wound healing, poor sense of taste and smell, diarrhea, and nausea. Moderate zinc deficiency is associated ... nose, as it might cause permanent loss of smell. In June 2009, the US Food and Drug ...

  13. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  14. [Zinc].

    Science.gov (United States)

    Couinaud, C

    1984-10-01

    Zinc is indispensable for life from bacteria to man. As a trace element it is included in numerous enzymes or serves as their activator (more than 80 zinc metallo-enzymes). It is necessary for nucleic acid and protein synthesis, the formation of sulphated molecules (insulin, growth hormone, keratin, immunoglobulins), and the functioning of carbonic anhydrase, aldolases, many dehydrogenases (including alcohol-dehydrogenase, retinal reductase indispensable for retinal rod function), alkaline phosphatase, T cells and superoxide dismutase. Its lack provokes distinctive signs: anorexia, diarrhea, taste, smell and vision disorders, skin lesions, delayed healing, growth retardation, delayed appearance of sexual characteristics, diminished resistance to infection, and it may be the cause of congenital malformations. Assay is now simplified by atomic absorption spectrophotometry in blood or hair. There is a latent lack prior to any disease because of the vices of modern eating habits, and this increases during stress, infections or tissue healing processes. Its lack is accentuated during long-term parenteral feeding or chronic gastrointestinal affections. Correction is as simple as it is innocuous, and zinc supplements should be given more routinely during surgical procedures.

  15. Thermoelectric Study of Copper Selenide

    Science.gov (United States)

    Yao, Mengliang; Liu, Weishu; Ren, Zhifeng; Opeil, Cyril

    2014-03-01

    Nanostructuring has been shown to be an effective approach in reducing lattice thermal conductivity and improving the figure of merit of thermoelectric materials. Copper selenide is a layered structure material, which has a low thermal conductivity and p-type Seebeck coefficient at low temperatures. We have evaluated several hot-pressed, nanostructured copper selenide samples with different dopants for their thermoelectric properties. The phenomenon of the charge-density wave observed in the nanocomposite, resistivity, Seebeck, thermal conductivity and carrier mobility will be discussed. Funding for this research was provided by the Solid State Solar - Thermal Energy Conversion Center (S3TEC), an Energy Frontier Research Center sponsored by the DOE, Office of Basic Energy Science, Award No. DE-SC0001299/ DE-FG02-09ER46577.

  16. Biological Chemistry of Hydrogen Selenide.

    Science.gov (United States)

    Cupp-Sutton, Kellye A; Ashby, Michael T

    2016-11-22

    There are no two main-group elements that exhibit more similar physical and chemical properties than sulfur and selenium. Nonetheless, Nature has deemed both essential for life and has found a way to exploit the subtle unique properties of selenium to include it in biochemistry despite its congener sulfur being 10,000 times more abundant. Selenium is more easily oxidized and it is kinetically more labile, so all selenium compounds could be considered to be "Reactive Selenium Compounds" relative to their sulfur analogues. What is furthermore remarkable is that one of the most reactive forms of selenium, hydrogen selenide (HSe(-) at physiologic pH), is proposed to be the starting point for the biosynthesis of selenium-containing molecules. This review contrasts the chemical properties of sulfur and selenium and critically assesses the role of hydrogen selenide in biological chemistry.

  17. Biological Chemistry of Hydrogen Selenide

    Directory of Open Access Journals (Sweden)

    Kellye A. Cupp-Sutton

    2016-11-01

    Full Text Available There are no two main-group elements that exhibit more similar physical and chemical properties than sulfur and selenium. Nonetheless, Nature has deemed both essential for life and has found a way to exploit the subtle unique properties of selenium to include it in biochemistry despite its congener sulfur being 10,000 times more abundant. Selenium is more easily oxidized and it is kinetically more labile, so all selenium compounds could be considered to be “Reactive Selenium Compounds” relative to their sulfur analogues. What is furthermore remarkable is that one of the most reactive forms of selenium, hydrogen selenide (HSe− at physiologic pH, is proposed to be the starting point for the biosynthesis of selenium-containing molecules. This review contrasts the chemical properties of sulfur and selenium and critically assesses the role of hydrogen selenide in biological chemistry.

  18. Oxidation Mechanism of Copper Selenide

    Science.gov (United States)

    Taskinen, Pekka; Patana, Sonja; Kobylin, Petri; Latostenmaa, Petri

    2014-09-01

    The oxidation mechanism of copper selenide was investigated at deselenization temperatures of copper refining anode slimes. The isothermal roasting of synthetic, massive copper selenide in flowing oxygen and oxygen - 20% sulfur dioxide mixtures at 450-550 °C indicate that in both atmospheres the mass of Cu2Se increases as a function of time, due to formation of copper selenite as an intermediate product. Copper selenide oxidises to copper oxides without formation of thick copper selenite scales, and a significant fraction of selenium is vaporized as SeO2(g). The oxidation product scales on Cu2Se are porous which allows transport of atmospheric oxygen to the reaction zone and selenium dioxide vapor to the surrounding gas. Predominance area diagrams of the copper-selenium system, constructed for selenium roasting conditions, indicate that the stable phase of copper in a selenium roaster gas with SO2 is the sulfate CuSO4. The cuprous oxide formed in decomposition of Cu2Se is further sulfated to CuSO4.

  19. Double-Diffusive Convection During Growth of Halides and Selenides

    Science.gov (United States)

    Singh, N. B.; Su, Ching-Hua; Duval, Walter M. B.

    2015-01-01

    several materials such as mercurous chloride, mercurous bromide, mercurous iodide, lead chloride lead bromide, lead iodide, thallium arsenic selenide, gallium selenide, zince sulfide zinc selenide and several crystals into devices. We have used both Bridgman and physical vapor transport (PVT) crystal growth methods. In the past have examined PVT growth numerically for conditions where the boundary of the enclosure is subjected to a nonlinear thermal profile. Since past few months we have been working on binary and ternary materials such as selenoiodides, doped zinc sulfides and mercurous chloro bromide and mercurous bromoiodides. In the doped and ternary materials thermal and solutal convection play extremely important role during the growth. Very commonly striations and banding is observed. Our experiments have indicated that even in highly purified source materials, homogeneity in 1-g environment is very difficult. Some of our previous numerical studies have indicated that gravity level less than 10-4 (?-g) helps in controlling the thermosolutal convection. We will discuss the ground based growth results of HgClxBr(1-x) and ZnSe growth results for the mm thick to large cm size crystals. These results will be compared with our microgravity experiments performed with this class of materials. For both HgCl-HgBr and ZnS-ZnSe the lattice parameters of the mixtures obey Vagard's law in the studied composition range. The study demonstrates that properties are very anisotropic with crystal orientation, and performance achievement requires extremely careful fabrication to utilize highest figure of merit. In addition, some parameters such as crystal growth fabrication, processing time, resolution, field of view and efficiency will be described based on novel solid solution materials. It was predicted that very similar to the pure compounds solid solutions also have very large anisotropy, and very precise oriented and homogeneous bulk and thin film crystals is required to achieve

  20. Improving the efficiency of copper indium gallium (Di-selenide (CIGS solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Directory of Open Access Journals (Sweden)

    M. Burghoorn

    2014-12-01

    Full Text Available Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-selenide (CIGS solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%. No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  1. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Xu, M. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Delft University of Technology, Optics Group, Van der Waalsweg 8, 2628 CH, Delft (Netherlands); Vroon, Z. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Zuyd Hogeschool, Nieuw Eyckholt 300, 6419 DJ, Heerlen (Netherlands); Belt, R. van de [Kriya Materials BV, Urmonderbaan 22, 6167 RD, Geleen (Netherlands); Buskens, P., E-mail: pascal.buskens@tno.nl, E-mail: buskens@dwi.rwth-aachen.de [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); DWI – Leibniz Institute for Interactive Materials, Forckenbeckstrasse 50, 52056, Aachen (Germany)

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  2. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Science.gov (United States)

    Burghoorn, M.; Kniknie, B.; van Deelen, J.; Xu, M.; Vroon, Z.; van Ee, R.; van de Belt, R.; Buskens, P.

    2014-12-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  3. World's largest sapphire for many applications

    Science.gov (United States)

    Khattak, Chandra P.; Shetty, Raj; Schwerdtfeger, C. Richard; Ullal, Saurabh

    2016-10-01

    Sapphire has been used for many high technology applications because of its excellent optical, mechanical, high temperature, abrasion resistance and dielectric properties. However, it is expensive and the volume of sapphire used has been limited. The potential sapphire requirements for LED and consumer electronic applications are very high. Emphasis has been on producing larger sapphire boules to achieve significant cost reductions so these applications are realized. World's largest sapphire boules, 500 mm diameter 300+kg, have been grown to address these markets.

  4. Pumping of titanium sapphire laser

    Science.gov (United States)

    Jelínková, H.; Vaněk, P.; Valach, P.; Hamal, K.; Kubelka, J.; Škoda, V.; Jelínek, M.

    1993-02-01

    Two methods of Ti:Sapphire pumping for the generation of tunable laser radiation in the visible region were studied. For coherent pumping, the radiation of the second harmonic of a Nd:YAP laser was used and a maximum output energy of E out=4.5 mJ was reached from the Ti:Sapphire laser. For noncoherent pumping, two different lengths of flashlamp pulses were used and a maximum of E out=300 mJ was obtained. Preliminary estimations of the wavelength range of tunability were made.

  5. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series...... of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  6. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

    NARCIS (Netherlands)

    Xu, M.; Wachters, A.J.H.; Deelen, J. van; Mourad, M.C.D.; Buskens, P.J.P.

    2014-01-01

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the

  7. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

    NARCIS (Netherlands)

    Xu, M.; Wachters, A.J.H.; Van Deelen, J.; Mourad, M.C.D.; Buskens, P.J.P.

    2014-01-01

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIG

  8. Electrochemical deposition of zinc selenide and cadmium selenide onto porous silicon from aqueous acidic solutions

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E.B., E-mail: eugene.chubenko@gmail.co [Department of Micro and Nanoelectronics, Belarusian State University of Informatics and Radioelectronics, Minsk 220013 (Belarus); Klyshko, A.A.; Petrovich, V.A.; Bondarenko, V.P. [Department of Micro and Nanoelectronics, Belarusian State University of Informatics and Radioelectronics, Minsk 220013 (Belarus)

    2009-09-01

    An electrochemical deposition process of ZnSe and CdSe compound semiconductors from aqueous acidic solutions onto silicon substrates with porous silicon layers formed on their surfaces was studied by the voltammetry method. The experimental data obtained were compared with the deposition data onto metal and silicon substrates, and the optimal conditions for the binary compound deposition onto porous silicon were determined. Semiconductor films deposited were studied by scanning electron microscopy, X-ray diffractometry, and X-ray microanalysis. The films are shown to have the crystalline structure and a nearly stoichiometric composition with a minor Se excess. Further annealing in air for 15 min allowed the Se concentration to be decreased.

  9. Hydrogen effect on the properties of sapphire

    Science.gov (United States)

    Mogilevsky, Radion N.; Sharafutdinova, Liudmila G.; Nedilko, Sergiy; Gavrilov, Valeriy; Verbilo, Dmitriy; Mittl, Scott D.

    2009-05-01

    Sapphire is a widely used material for optical, electronic and semiconductor applications due to its excellent optical properties and very high durability. Optical and mechanical properties of sapphire depend on many factors such as the starting materials that are used to grow crystals, methods to grow sapphire crystals, etc. Demand for highest purity and quality of sapphire crystals increased ten fold for the last several years due to new applications for this material. In this work we studied the effect of starting materials and crystal growth methods on the optical and mechanical properties of sapphire, especially concentrating on the effect of hydrogen on the properties of sapphire. It was found that the infrared (IR) absorption which is traditionally used to measure the hydrogen content in sapphire crystals cannot be reliably used and the data obtained by this method provides a much lower hydrogen concentration than actual. We have shown for the first time that Nuclear Magnetic Resonance techniques can be successfully used to determine hydrogen concentration in sapphire crystals. We have shown that hydrogen concentration in sapphire can reach thousands of ppm if these crystals are grown from Verneuil starting material or aluminum oxide powder. Alternatively, the hydrogen concentration is very low if sapphire crystals are grown from High Purity Densified Alumina (HPDA®) as a starting material. HPDA® is produced by EMT, Inc through their proprietary patented technology. It was found that optical and mechanical properties of sapphire crystals grown using EMT HPDA® starting material are much better than those sapphire crystals grown using a starting material of Verneuil crystals or aluminum oxide powder.

  10. Iron-Doped Zinc Selenide: Spectroscopy and Laser Development

    Science.gov (United States)

    2014-03-27

    3 PRF pulse repetition frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 DPSS diode ...4800 300 2006 Akimov [24] SC ZnSe GS 370 µJ 3950–5050 300 2006 Gallian [25] PC ZnSe GS — 4450 300 2008 Il’ichev [26] PC ZnSe Superluminescence ∼ 1 mJ... diode -pumped solid-state (DPSS) Er:YAG laser modules emitting at 2937 nm with 1.5 W of CW output power are now available [32]. Using beam combination

  11. Versatile Chromium-Doped Zinc Selenide Infrared Laser Sources

    Science.gov (United States)

    2010-05-01

    Erbium Doped Fiber Amplifiers ( EDFAs ). An EDFA is essentially a normal optical fiber waveguide that has been lightly doped with a rare-earth...element, namely erbium (possibly co-doped with ytterbium to increase the pumping efficiency and gain). In a typical EDFA , 980 nm photons are used to

  12. Electrical characterization of nanocrystalline zinc selenide thin films

    Science.gov (United States)

    Sharma, Jeewan; Shikha, Deep; Tripathi, Surya Kant

    2012-08-01

    In the present paper, we have studied the effect of photo-illumination on electrical properties of nanocrystalline ZnSe thin films. The ZnSe thin films with different grain sizes (coherently diffracting domains) have been prepared. The semiconducting material with the composition Zn25Se75 has been prepared using melt-quenching technique. Thermal evaporation technique has been used to prepare nanocrystalline ZnSe thin films on highly cleaned glass substrates at different partial pressures of Ar gas. The grain size has been controlled by the partial pressure of inert gas. The grain size has been calculated using X-ray diffraction plots. Mobility activation has been studied from the photocurrent decay curves. The effective density of states ( N eff), frequency factor ( S), and trap depth ( E) have been calculated for all the films having different grain sizes. Three different types of trap levels have been found in these films. There is a linear distribution of traps having different energies below the conduction band. The increase in photoconductivity is explained in terms of built in potential barriers ( ϕ b) at the grain boundaries.

  13. The heat capacity of solid antimony selenide

    Science.gov (United States)

    Pashinkin, A. S.; Malkova, A. S.; Mikhailova, M. S.

    2008-06-01

    The literature data on the heat capacity of solid antimony selenide over the temperature range 53 K- T m were analyzed. The heat capacity of Sb2Se3 was measured from 350 to 600 K on a DSM-2M calorimeter. The experimental data were used to calculate the dependence C p = a + bT + cT -2 and the thermodynamic functions of solid Sb2Se3 over the temperature range 298.15 700 K.

  14. Dislocation Etching Solutions for Mercury Cadmium Selenide

    Science.gov (United States)

    2014-09-01

    manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy this report when it is no longer...dislocation—thus enabling EPD measurement of Hg1-xCdxSe. 15. SUBJECT TERMS Mercury cadmium selenide, etch pits, dislocations, preferential etching...by the US Army Research Laboratory and was accomplished under Cooperative Agreement # W911NF-12-2-0019. vi

  15. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    Science.gov (United States)

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10(5) Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ1, τ2 and τ3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ1, τ2 and τ3 of 0.10, 0.73 and 4.02 min, respectively).

  16. Temperature influence study on copper selenide films

    OpenAIRE

    V.RAJENDRAN; PACKIASEELI S. ARULMOZHI; MUTHUMARI S.; Vijayalakshmi, R.

    2016-01-01

    Copper selenide was prepared by film is successfully deposited on a Fluorine-doped Tin Oxide (FTO) substrate by a brush plating technique. The film was uniform, had good adherence to the substrate and was annealed at 300 ◦ C and 500 ◦ C. As the annealing temperature increased, the orientation of the crystallites is more randomized than in the as-prepared film. The structural and optical properties of the film were investigated by XRD, SEM, EDAX, UV-Visible and PL. The XRD pattern indicated th...

  17. Photoluminescence Study of Copper Selenide Thin Films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.

    2011-10-01

    Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

  18. Sapphire Viewports for a Venus Probe Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed Phase 1 program will demonstrate that sapphire viewports are feasible for use in Venus probes. TvU's commercial viewport products have demonstrated that...

  19. Secondary particle emission from sapphire single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Minnebaev, K.F., E-mail: minnebaev@mail.ru [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Khvostov, V.V.; Zykova, E.Yu.; Tolpin, K.A. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Colligon, J.S. [Manchester Metropolitan University, Chester Street, Manchester M1 5GD (United Kingdom); Yurasova, V.E. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    Secondary ion emission from sapphire single crystal has been studied experimentally and by means of computer simulation. The particular oscillations of secondary ion energy spectra and two specific maxima of O{sup +} and Al{sup +} ions were observed under irradiation of (0001) sapphire face by 1 and 10 keV Ar{sup +} ions. We have explained this by the interplay of the charge exchange processes between moving particles and solids. The existence of two maxima in energy spectra of O{sup +} and Al{sup +} secondary ions can be also connected with special features of single-crystal sputtering: the low-energy peak can be formed by random sputtering and the high-energy peak from focusing collisions. In addition some similarity was found between the positions of low-energy maximum in energy spectra of Al{sup +} ions emitted from sapphire and the principal maxima of Al{sup +} ions ejected from the aluminum single crystal. This indicates a possibility to explain the presence of low-energy maximum in energy spectra of secondary ions ejecting from sapphire by emission of Al{sup +} ions from aluminum islands appearing in a number of cases on the sapphire surface due to preferential sputtering of oxygen. These different mechanisms of creating the energy spectra of ions emitted from sapphire should be taken in account.

  20. Deposition of copper selenide thin films and nanoparticles

    Science.gov (United States)

    Hu, Yunxiang; Afzaal, Mohammad; Malik, Mohammad A.; O'Brien, Paul

    2006-12-01

    A new method is reported for the growth of copper selenide thin films and nanoparticles using copper acetylacetonate and trioctylphosphine selenide. Aerosol-assisted chemical vapor deposition experiments lead to successful deposition of tetragonal Cu 2Se films. In contrast, hexadecylamine capped nanoparticles are composed of cubic Cu 2-xSe. The deposited materials are optically and structurally characterized. The results of this comprehensive study are described and discussed.

  1. Method of surface treatment on sapphire substrate

    Institute of Scientific and Technical Information of China (English)

    NIU Xin-huan; LIU Yu-ling; TAN Bai-mei; HAN Li-ying; ZHANG Jian-xin

    2006-01-01

    Sapphire single crystals are widely used in many areas because of the special physic properties and important application value. As an important substrate material,stringent surface quality requirements,i.e. surface finish and flatness,are required. The use of CMP technique can produce high quality surface finishes at low cost and with fast material removal rates. The sapphire substrate surface is treated by using CMP method. According to sapphire substrate and its product properties,SiO2 sol is chosen as abrasive. The particle size is 15-25 nm and the concentration is 40%. According to the experiment results,pH value is 10.5-11.5. After polishing and cleaning the sapphire surface,the surface roughness was measured by using AFM method and the lowest value of Ra 0.1 nm was obtained. From the results,it can be seen that using such method,the optimal sapphire surface can be gotten,which is advantageous for epitaxial growth and device making-up.

  2. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  3. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    Science.gov (United States)

    Deluca, J. J. (Inventor)

    1979-01-01

    An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  4. A comparative study on methods to structure sapphire

    NARCIS (Netherlands)

    Crunteanu, A.; Hoffmann, P.; Pollnau, M.; Buchal, C.

    2003-01-01

    Ti:sapphire is an attractive material for applications as a tunable or short-pulse laser and as a broadband light source in low-coherence interferometry. We investigated several methods to fabricate rib structures in sapphire that can induce channel waveguiding in Ti:sapphire planar waveguides. Thes

  5. Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

    Science.gov (United States)

    Steirer, K Xerxes; Garris, Rebekah L; Li, Jian V; Dzara, Michael J; Ndione, Paul F; Ramanathan, Kannan; Repins, Ingrid; Teeter, Glenn; Perkins, Craig L

    2015-06-21

    A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV).

  6. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    2008-01-01

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in orde

  7. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in

  8. Neutralization by metal ions of the toxicity of sodium selenide.

    Directory of Open Access Journals (Sweden)

    Marc Dauplais

    Full Text Available Inert metal-selenide colloids are found in animals. They are believed to afford cross-protection against the toxicities of both metals and selenocompounds. Here, the toxicities of metal salt and sodium selenide mixtures were systematically studied using the death rate of Saccharomyces cerevisiae cells as an indicator. In parallel, the abilities of these mixtures to produce colloids were assessed. Studied metal cations could be classified in three groups: (i metal ions that protect cells against selenium toxicity and form insoluble colloids with selenide (Ag⁺, Cd²⁺, Cu²⁺, Hg²⁺, Pb²⁺ and Zn²⁺, (ii metal ions which protect cells by producing insoluble metal-selenide complexes and by catalyzing hydrogen selenide oxidation in the presence of dioxygen (Co²⁺ and Ni²⁺ and, finally, (iii metal ions which do not afford protection and do not interact (Ca²⁺, Mg²⁺, Mn²⁺ or weakly interact (Fe²⁺ with selenide under the assayed conditions. When occurring, the insoluble complexes formed from divalent metal ions and selenide contained equimolar amounts of metal and selenium atoms. With the monovalent silver ion, the complex contained two silver atoms per selenium atom. Next, because selenides are compounds prone to oxidation, the stabilities of the above colloids were evaluated under oxidizing conditions. 5,5'-dithiobis-(2-nitrobenzoic acid (DTNB, the reduction of which can be optically followed, was used to promote selenide oxidation. Complexes with cadmium, copper, lead, mercury or silver resisted dissolution by DTNB treatment over several hours. With nickel and cobalt, partial oxidation by DTNB occurred. On the other hand, when starting from ZnSe or FeSe complexes, full decompositions were obtained within a few tens of minutes. The above properties possibly explain why ZnSe and FeSe nanoparticles were not detected in animals exposed to selenocompounds.

  9. Isomorphism and solid solutions among Ag- and Au-selenides

    Energy Technology Data Exchange (ETDEWEB)

    Palyanova, Galina A.; Seryotkin, Yurii V. [Sobolev Institute of Geology and Mineralogy, Novosibirsk (Russian Federation); Novosibirsk State University (Russian Federation); Kokh, Konstantin A., E-mail: k.a.kokh@gmail.com [Sobolev Institute of Geology and Mineralogy, Novosibirsk (Russian Federation); Novosibirsk State University (Russian Federation); Tomsk State University (Russian Federation); Bakakin, Vladimir V. [Nikolaev Institute of Inorganic Chemistry, Novosibirsk (Russian Federation)

    2016-09-15

    Au-Ag selenides were synthesized by heating stoichiometric mixtures of elementary substances of initial compositions Ag{sub 2−x}Au{sub x}Se with a step of x=0.25 (0≤x≤2) to 1050 °C and annealing at 500 °C. Scanning electron microscopy, optical microscopy, electron microprobe analysis and X-ray powder diffraction methods have been applied to study synthesized samples. Results of studies of synthesized products revealed the existence of three solid solutions with limited isomorphism Ag↔Au: naumannite Ag{sub 2}Se – Ag{sub 1.94}Au{sub 0.06}Se, fischesserite Ag{sub 3}AuSe{sub 2} - Ag{sub 3.2}Au{sub 0.8}Se{sub 2} and gold selenide AuSe - Au{sub 0.94}Ag{sub 0.06}Se. Solid solutions and AgAuSe phases were added to the phase diagram of Ag-Au-Se system. Crystal-chemical interpretation of Ag-Au isomorphism in selenides was made on the basis of structural features of fischesserite, naumannite, and AuSe. - Highlights: • Au-Ag selenides were synthesized. • Limited Ag-Au isomorphism in the selenides is affected by structural features. • Some new phases were introduced to the phase diagram Ag-Au-Se.

  10. Advanced thin dicing blade for sapphire substrate

    Directory of Open Access Journals (Sweden)

    Koji Matsumaru, Atsushi Takata and Kozo Ishizaki

    2005-01-01

    Full Text Available Advanced thin dicing blades for cutting sapphire were fabricated and evaluated for cutting performance with respect to dicing blade wear and meandering of cutting lines. Three kinds of different commercial blades were used to compare the cutting performance. These blades had the same thickness and the same diamond grain size. The matrix material of one dicing blade was nickel–phosphorus alloy and two other were a vitric material. Newly developed dicing blades consisted of a vitric material with pore. A dicing machine was used for cutting sapphire. Turning velocity, cutting depth and feeding rate were 20,000 min−1, 200 μm and 1 mm s−1, respectivity. Cutting directions were 110 and 010. All blades could cut 1000 mm and more in the 110 direction. On the other hand, commercial dicing blades generated meandering lines and were broken only by 50 mm of cutting length in 010 direction. Fabricated blade can cut 1000 mm and more in 010 direction. The wear of fabricated dicing blade was the largest in the dicing blades. Although cutting performance of commercial dicing blades depended on the sapphire orientation, that of fabricated blade was independent of the sapphire orientation. It has been confirmed that the fabricated dicing blade was kept a cutting ability by flash diamonds on the dicing blade surface, which were created by wear of blade during cutting sapphire. Low cutting ability of commercial blades increased cutting force between with increase of cutting length. The increased cutting force produced to bend a blade and cutting lines, and finally a fracture of blade.

  11. Ex Situ Formation of Metal Selenide Quantum Dots Using Bacterially Derived Selenide Precursors

    Energy Technology Data Exchange (ETDEWEB)

    Fellowes, Jonathan W.; Pattrick, Richard; Lloyd, Jon; Charnock, John M.; Coker, Victoria S.; Mosselmans, JFW; Weng, Tsu-Chien; Pearce, Carolyn I.

    2013-04-12

    Luminescent quantum dots were synthesized using bacterially derived selenide (SeII-) as the precursor. Biogenic SeII- was produced by the reduction of Se-IV by Veillonella atypica and compared directly against borohydride-reduced Se-IV for the production of glutathione-stabilized CdSe and beta-mercaptoethanol-stabilized ZnSe nanoparticles by aqueous synthesis. Biological SeII- formed smaller, narrower size distributed QDs under the same conditions. The growth kinetics of biologically sourced CdSe phases were slower. The proteins isolated from filter sterilized biogenic SeII- included a methylmalonyl-CoA decarboxylase previously characterized in the closely related Veillonella parvula. XAS analysis of the glutathione-capped CdSe at the S K-edge suggested that sulfur from the glutathione was structurally incorporated within the CdSe. A novel synchrotron based XAS technique was also developed to follow the nucleation of biological and inorganic selenide phases, and showed that biogenic SeII- is more stable and more resistant to beam-induced oxidative damage than its inorganic counterpart. The bacterial production of quantum dot precursors offers an alternative, 'green' synthesis technique that negates the requirement of expensive, toxic chemicals and suggests a possible link to the exploitation of selenium contaminated waste streams.

  12. Direct femtosecond laser waveguide writing inside zinc phosphate glass

    NARCIS (Netherlands)

    Fletcher, L.; Witcher, J.J.; Troy, N.; Reis, S.T.; Brow, R.K.; Krol, D.M.

    2011-01-01

    We report the relationship between the initial glass composition and the resulting microstructural changes after direct femtosecond laser waveguide writing with a 1 kHz repetition rate Ti:sapphire laser system. A zinc polyphosphate glass composition with an oxygen to phosphorus ratio of 3.25 has dem

  13. Surface modification of sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  14. The growth of sapphire single crystals

    Directory of Open Access Journals (Sweden)

    STEVAN DJURIC

    2001-06-01

    Full Text Available Sapphire (Al2O3 single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation wc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  15. Retrograde tracing of zinc-enriched (ZEN) neuronal somata in rat spinal cord

    DEFF Research Database (Denmark)

    Wang, Z; Danscher, G; Mook Jo, S

    2001-01-01

    and having either inhibitory or excitatory ZEN terminals. The ZEN neurons seem to form a vast network of terminals located primarily in the gray matter, but also contacting dendrites radiating into the white matter. Important functions of this rather massive system of ZEN terminals can not be deduced from......The zinc selenide autometallographic (ZnSeAMG) technique for tracing the retrograde axonal transport of zinc ions in zinc-enriched (ZEN) neurons was used to map the distribution of ZEN neuronal somata in rat spinal cord. After a local injection of sodium selenide into the dorsal or ventral horn, Zn......SeAMG-labeled ZEN neurons appeared in Rexed's laminae V, VII and X while laminae I and II were void. A few scattered ZEN somata were observed in the remaining laminae. The labeled neurons differed in shape and size, and the relatively high level of labeled somata around the injection site suggests that many ZEN...

  16. Photonic detection and characterization of DNA using sapphire microspheres

    OpenAIRE

    Serpengüzel, Ali; Murib, Mohammed Sharif; Yeap, Weng-Siang; Martens, Daan; Bienstman, Peter; De Ceuninck, Ward; van Grinsven, Bart; Schoening, Michael J.; Michiels, Luc; Haenen, Ken; Ameloot, Marcel; Wagner, Patrick

    2014-01-01

    A microcavity-based deoxyribonucleic acid (DNA) optical biosensor is demonstrated for the first time using synthetic sapphire for the optical cavity. Transmitted and elastic scattering intensity at 1510 nm are analyzed from a sapphire microsphere (radius 500 mu m, refractive index 1.77) on an optical fiber half coupler. The 0.43 nm angular mode spacing of the resonances correlates well with the optical size of the sapphire sphere. Probe DNA consisting of a 36-mer fragment was covalently immob...

  17. Sapphire Multiple Filament and Large Plate Growth Processes

    Science.gov (United States)

    1972-10-01

    for sapphire filaments is scrap white verneuil -grown sapphire boules. These boules are processed here at Tyco to achieve the proper mesh size...entrapped liquid freeze, they shrink, resulting in voids. Raw material for our growth process is provided by use of scap verneuil sapphire boules. In...J ;~ ;t" ,, ,, .. ::~ ,:~~\\i : i .<’\\ :1 ’ r .,l,, .. ’ ... :,J_ ’ ’~~ .. ;~ 1-.. i d;·, AFML-TR -7---190 1;).-- SAPPHIRE MULTIPLE

  18. REINFORCEMENT OF NICKEL CHROMIUM ALLOYS WITH SAPPHIRE WHISKERS.

    Science.gov (United States)

    SAPPHIRE, COMPOSITE MATERIALS, CERAMIC FIBERS , CERAMIC FIBERS , TITANIUM COMPOUNDS, ZIRCONIUM COMPOUNDS, HYDRIDES, ADDITIVES, CHROMIUM ALLOYS, FIBER METALLURGY, IRON COMPOUNDS, ENCAPSULATION, DENSITY, SURFACE TENSION.

  19. Electrodeposition of copper selenide films from acidic bath and their properties

    Science.gov (United States)

    Mane, Rajaram S.; Shaikh, Arif V.; Joo, Oh-Shim; Han, Sung-Hwan; Pathan, Habib M.

    2012-06-01

    Copper selenide thin films are successfully deposited using electrodeposition method by combining copper sulfate and sodiumseleno sulfate precursors at room temperature in acidic bath. The chemical composition was a key factor in preparing high-quality uniform and smooth thin films of the copper selenide. We present indium-tin-oxide as a substrate for depositing copper selenide films which usually exists as copper (I) selenide or copper (II) selenide. Obtained brownish films of copper selenide are examined for their structural, morphological, compositional and optical properties by means of X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques, respectively for the structural, morphological and optical analysis.

  20. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.;

    1976-01-01

    of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection......Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...

  1. CuInSe2 thin film solar cells synthesised from electrodeposited binary selenide precursors

    OpenAIRE

    Fischer, Johannes

    2012-01-01

    The box must contain a summary in a maximum of 1,700 characters, spaces included. The fabrication of a CuInSe2 thin film solar cell from an electrodeposited precursor stack consisting of indium selenide and copper selenide layers is demonstrated. A best conversion efficiency of 5.5% was achieved, a higher efficiency than previously reported in literature. The thesis focuses on three main parts: (i) electrochemistry of indium selenide: The incorporation of indium in the deposit require...

  2. Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire.

    Science.gov (United States)

    Perillat-Merceroz, G; Thierry, R; Jouneau, P H; Ferret, P; Feuillet, G

    2012-03-30

    Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

  3. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells

    Energy Technology Data Exchange (ETDEWEB)

    Brun, Nadja Rebecca [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Wehrli, Bernhard [Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Fent, Karl, E-mail: karl.fent@fhnw.ch [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland)

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L{sup −1} molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L{sup −1}. From OPV, copper (14 μg L{sup −1}), zinc (87 μg L{sup −1}) and silver (78 μg L{sup −1}) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. - Highlights: • Photovoltaics may be disposed in the environment after usage. • Copper indium gallium selenide (CIGS) and organic (OPV) cells were compared. • Morphological and molecular effects were assessed in zebrafish embryos. • Environmental condition affected metal leaching and ecotoxicological activity. • Damaged CIGS cells pose higher risk to the environment than OPV cells.

  4. Mechanism of copper selenide growth on copper-oxide selenium system

    Science.gov (United States)

    Ishikawa, Y.; Kido, O.; Kimura, Y.; Kurumada, M.; Suzuki, H.; Saito, Y.; Kaito, C.

    2004-01-01

    Transmission electron microscopy was used to study spontaneous copper selenide formation on Cu particles covered with an oxide layer. Even if the copper particle surface was covered with a Cu 2O layer, selenides were formed by diffusion through the metal oxide layer. For a particle size less than 50 nm, selenide was formed in Cu particles by the diffusion of Se atoms passing through the Cu 2O layer. For particles larger than 100 nm in size, selenide was formed in Se film. It was also found that the thickness of the Cu 2O layer on the surface of Cu particle accelerated diffusion of Se atoms to the copper particle.

  5. Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

  6. A one-pot stereoselective synthesis of 1,4-dienyl selenides by hydrostannylation-Stille tandem reaction of acetylenic selenides with Bu3SnH and allylic bromides

    Institute of Scientific and Technical Information of China (English)

    La Mei Yu; Wen Yan Hao; Ming Zhong Cai

    2008-01-01

    1,4-Dienyl selenides can be stereoselectively synthesized in one pot under mild conditions in good yields by the palladium-catalyzed hydrostannylation of acetylenic selenides, followed by Stille coupling with allylic bromides.

  7. Aqueous preparation of surfactant-free copper selenide nanowires.

    Science.gov (United States)

    Chen, Xinqi; Li, Zhen; Yang, Jianping; Sun, Qiao; Dou, Shixue

    2015-03-15

    Uniform surfactant-free copper selenide (Cu2-xSe) nanowires were prepared via an aqueous route. The effects of reaction parameters such as Cu/Se precursor ratio, Se/NaOH ratio, and reaction time on the formation of nanowires were comprehensively investigated. The results show that Cu2-xSe nanowires were formed through the assembling of CuSe nanoplates, accompanied by their self-redox reactions. The resultant Cu2-xSe nanowires were explored as a potential thermoelectric candidate in comparison with commercial copper selenide powder. Both synthetic and commercial samples have a similar performance and their figures of merit are 0.29 and 0.38 at 750K, respectively.

  8. Selenide-Based Electrocatalysts and Scaffolds for Water Oxidation Applications

    KAUST Repository

    Xia, Chuan

    2015-11-05

    Selenide-based electrocatalysts and scaffolds on carbon cloth are successfully fabricated and demonstrated for enhanced water oxidation applications. A max­imum current density of 97.5 mA cm−2 at an overpotential of a mere 300 mV and a small Tafel slope of 77 mV dec−1 are achieved, suggesting the potential of these materials to serve as advanced oxygen evolution reaction catalysts.

  9. The unexpected properties of alkali metal iron selenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dagotto, Elbio R [ORNL

    2013-01-01

    The iron-based superconductors that contain FeAs layers as the fundamental building block in the crystal structures have been rationalized in the past using ideas based on the Fermi surface nesting of hole and electron pockets when in the presence of weak Hubbard U interactions. This approach seemed appropriate considering the small values of the magnetic moments in the parent compounds and the clear evidence based on photoemission experiments of the required electron and hole pockets. However, recent results in the context of alkali metal iron selenides, with generic chemical composition AxFe2ySe2 (A alkali metal element), have challenged those previous ideas since at particular compositions y the low-temperature ground states are insulating and display antiferromagnetic order with large iron magnetic moments. Moreover, angle-resolved photoemission studies have revealed the absence of hole pockets at the Fermi level in these materials. The present status of this exciting area of research, with the potential to alter conceptually our understanding of the ironbased superconductors, is here reviewed, covering both experimental and theoretical investigations. Other recent related developments are also briefly reviewed, such as the study of selenide two-leg ladders and the discovery of superconductivity in a single layer of FeSe. The conceptual issues considered established for the alkali metal iron selenides, as well as several issues that still require further work, are discussed.

  10. Rain Erosion Behavior of Silicon Dioxide Films Prepared on Sapphire

    Institute of Scientific and Technical Information of China (English)

    Liping FENG; Zhengtang LIU; Wenting LIU

    2005-01-01

    Silicon dioxide (SiO2) films were prepared on sapphire (α-Al2O3) by radio frequency magnetron reactive sputtering in order to in crease both transmission and rain erosion resistant performance of infrared domes of sapphire. Composition and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD),respectively. The transmittance of uncoated and coated sapphire was measured using a Fourier transform infrared(FTIR) spectrometer. Rain erosion tests of the uncoated and coated sapphire were performed at 211 m/s impact velocity with an exposure time ranging from 1 to 8 min on a whirling arm rig. Results show that the deposited films can greatly increase the transmission of sapphire in mid-wave IR. After rain erosion test, decreases in normalized transmission were less than 1% for designed SiO2 films and the SiO2 coating was strongly bonded to the sapphire substrate. In addition, sapphires coated with SiO2 films had a higher transmittance than uncoated ones after rain erosion.

  11. Effect of Propellant Combustion on Sapphire

    Directory of Open Access Journals (Sweden)

    Mark L. Bundy

    2000-10-01

    Full Text Available Sapphire (Al2O3 is the window material of choice for laser beam transmission into the combustion chamber of laser-ignited guns. To evaluate the long-term effects of propellant combustion on an Al/sub 2/O/sub 3/ laser window, it is important to know the window temperature during firing. This paper presents temperature data on an Al/sub 2/O/sub 3/ sample located in the breech face of the gun where the laser window would be in a laser-ignited 155 mm(M199 cannon. Al/sub 2/O/sub 3/ sample is a substrate material of a commercially sold thin-film thermocouple, and is therefore thermally, if not optically, representative of an actual Al/sub 2/O/sub 3/ laser window.

  12. Ruby and sapphire from Jegdalek, Afghanistan

    Science.gov (United States)

    Bowersox, G.W.; Foord, E.E.; Laurs, B.M.; Shigley, J.E.; Smith, C.P.

    2000-01-01

    This study provides detailed mining and gemological information on the Jegdalek deposit, in east-central Afghanistan, which is hosted by elongate beds of corundum-bearing marble. Some facet-grade ruby has been recovered, but most of the material consists of semitransparent pink sapphire of cabochon or carving quality. The most common internal features are dense concentrations of healed and nonhealed fracture planes and lamellar twin planes. Color zoning is common, and calcite, apatite, zircon, mica, iron sulfide minerals, graphite, rutile, aluminum hydroxide, and other minerals are also present in some samples. Although the reserves appear to be large, future potential will depend on the establishment of a stable government and the introduction of modern mining and exploration techniques. ?? 2000 Gemological Institute of America.

  13. Synthesis of titanium sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1998-06-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al{sub 2}O{sub 3}) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al{sub 2}O{sub 3} waveguide laser. The implantation of Ti and O ions into c-axis oriented {alpha}-Al{sub 2}O{sub 3} followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti{sup 3+} ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of {approx} .6 to .9 {mu}m, similar to that expected from Ti{sup 3+}. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al{sub 2O}3 waveguide. (authors). 8 refs., 3 figs.

  14. Sodium selenide toxicity is mediated by O2-dependent DNA breaks.

    Directory of Open Access Journals (Sweden)

    Gérald Peyroche

    Full Text Available Hydrogen selenide is a recurrent metabolite of selenium compounds. However, few experiments studied the direct link between this toxic agent and cell death. To address this question, we first screened a systematic collection of Saccharomyces cerevisiae haploid knockout strains for sensitivity to sodium selenide, a donor for hydrogen selenide (H(2Se/HSe(-/Se(2-. Among the genes whose deletion caused hypersensitivity, homologous recombination and DNA damage checkpoint genes were over-represented, suggesting that DNA double-strand breaks are a dominant cause of hydrogen selenide toxicity. Consistent with this hypothesis, treatment of S. cerevisiae cells with sodium selenide triggered G2/M checkpoint activation and induced in vivo chromosome fragmentation. In vitro, sodium selenide directly induced DNA phosphodiester-bond breaks via an O(2-dependent reaction. The reaction was inhibited by mannitol, a hydroxyl radical quencher, but not by superoxide dismutase or catalase, strongly suggesting the involvement of hydroxyl radicals and ruling out participations of superoxide anions or hydrogen peroxide. The (•OH signature could indeed be detected by electron spin resonance upon exposure of a solution of sodium selenide to O(2. Finally we showed that, in vivo, toxicity strictly depended on the presence of O(2. Therefore, by combining genome-wide and biochemical approaches, we demonstrated that, in yeast cells, hydrogen selenide induces toxic DNA breaks through an O(2-dependent radical-based mechanism.

  15. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  16. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  17. Study on the Anisotropy of Meniscus in the Growing Sapphire

    Institute of Scientific and Technical Information of China (English)

    YAO Tai; ZUO Hong-bo; HAN Jie-cai; MENG Song-he; ZHANG Ming-fu; LI Chang-qing; Grigoryan Benik

    2006-01-01

    This study is aimed at predicting the relationship between the meniscus and the quality of the sapphire crystals produced by the micro-pulling and shoulder at cooled center (SAPMIC) technique. As with different orientations, the shapes of the meniscus vary, so an investigation into the anisotropy of the meniscus shapes is very important for the final quality of the sapphire crystal. An effective model to describe meniscus shapes and their formation process has been presented. The model has been applied to a sapphire crystal of 200 mm diameter in order to check its reliability. The results show that the model proves to be useful for forecasting the final shapes of the sapphire crystal made by the SAPMIC technique.

  18. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  19. Second generation 50 K dual-mode sapphire oscillator.

    Science.gov (United States)

    Anstie, James D; Hartnett, John G; Tobar, Michael E; Ivanov, Eugene N; Stanwix, Paul L

    2006-02-01

    Low-temperature, high-precision sapphire resonators exhibit a turning point in mode frequency-temperature dependence at around 10 K. This, along with sapphire's extremely low dielectric losses at microwave frequencies, results in oscillator fractional frequency stabilities on the order of 10(-15). At higher temperatures the lack of a turning point makes single-mode oscillators very sensitive to temperature fluctuations. By exciting two quasi-orthogonal whispering gallery (WG) modes in a single sapphire resonator, a turning point in the frequency-temperature dependence can be found in the beat frequency between the two modes. A temperature control technique based on mode frequency temperature dependence has been used to maintain the sapphire at this turning point and the fractional frequency instability of the beat frequency has been measured to be at a level of 4.3 X 10(-14) over 1 s, dropping to 3.5 X 10(-14) over 4 s integration time.

  20. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  1. Neutron Transmission through Sapphire Crystals: Experiments and Simulations

    OpenAIRE

    Rantsiou, Emmanouela; Filges, Uwe; Panzner, Tobias; Klinkby, Esben Bryndt

    2013-01-01

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Thosesimulations were part of the effort of validating and improving the newly developed interface between...

  2. Investigation of sapphire detector designed for single particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Karacheban, Olena; Hempel, Maria [DESY, Zeuthen (Germany); Brandenburg University of Technology, Cottbus (Germany); Afanaciev, Konstantin [NCPHEP, Minsk (Belarus); Henschel, Hans; Lange, Wolfgang; Leonard, Jessica [DESY, Zeuthen (Germany); Levy, Itamar [Tel Aviv University, Tel Aviv (Israel); Lohmann, Wolfgang [Brandenburg University of Technology, Cottbus (Germany); CERN, Geneva (Switzerland); Novgorodova, Olga [Technical University, Dresden (Germany); Schuwalow, Sergej [DESY, Hamburg (Germany)

    2015-07-01

    For beam halo and beam loss monitoring systems at accelerators extremely radiation hard sensors are needed. Single crystal sapphire is a promising material. Industrially grown sapphire wafers are available in large sizes, are low in cost and can be operated at room temperature. Currently sapphire sensors are used for a beam-loss monitor at FLASH,detecting bunches of particles crossing the sensors simultaneously. Here we present a multichannel detector designed for single minimum ionising particle detection using a stack of sapphire plates. The performance of the detector was studied in a 5 GeV electron beam at DESY-II. The detector was operated together with the EUDET beam telescope, which allowed the reconstruction of the position of the hits at the detector. For each sapphire plate the charge collection efficiency was measured as a function of the bias voltage and the signal size as a function of the hit position with respect to the metal electrodes. The data confirms that mainly electrons contribute to the signal. Based on these results the next generation sapphire detector will be designed.

  3. Photoconductive Properties of Brush Plated Copper Indium Gallium Selenide Films

    OpenAIRE

    Subiramaniyam, N. P.; P. Thirunavukkarasu; Murali, K. R.

    2013-01-01

    Copper indium gallium selenide (CIGS) films were deposited for the first time by the brush electrodeposition technique. X-ray diffraction studies indicated the formation of single phase chalcopyrite CIGS. Lattice parameters, dislocation density, and strain were calculated. Band gap of the films increased from 1.12 eV to 1.63 eV as the gallium concentration increased. Room temperature transport parameters of the films, namely, resistivity increased from 0.10 ohm cm to 12 ohm cm, mobility decre...

  4. Synthesis of Cadmium Selenide Quantum Dots and Their Cytotoxicity

    OpenAIRE

    Liu, Ruoxi

    2013-01-01

    Cadmium selenide (CdSe) nanoparticles (NPs) have applications in biomedical, biochemistry, bioimaging areas through different methods such as cell labelling and drug delivery (Chapter1). This study aims to test the optical and biological properties of CdSe NPs so that its applications can be improved in these areas in the future. Three types of CdSe NPs have been synthesised using a wet chemical method with the molar ratio of Cd:Se 10:1, 4:1 and 1:1. The observed luminescence of the CdSe N...

  5. Electronic band structure of calcium selenide under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Louail, L. [Faculty of Sciences, Department of Physics, University of Setif, Setif (Algeria)], E-mail: llouail@yahoo.fr; Haddadi, K.; Maouche, D.; Ali Sahraoui, F.; Hachemi, A. [Faculty of Sciences, Department of Physics, University of Setif, Setif (Algeria)

    2008-09-01

    Energy band structures under pressure of calcium selenide (CaSe) were calculated using the plane-wave pseudopotential code CASTEP. The results show a progressive transition from a direct to an indirect gap semiconductor at a pressure of about 2 GPa, in the B1 phase. An insulator-conductor change was also observed at 70 GPa, in the B2 phase. Concerning CaSe, these two results could not be evidenced in previous literature. Hence, our work is a first attempt in this direction.

  6. Electrochemical synthesis of alkali-intercalated iron selenide superconductors

    Institute of Scientific and Technical Information of China (English)

    申士杰; 应天平; 王刚; 金士锋; 张韩; 林志萍; 陈小龙

    2015-01-01

    Electrochemical method has been used to insert K/Na into FeSe lattice to prepare alkali-intercalated iron selenides at room temperature. Magnetization measurement reveals that KxFe2Se2 and NaxFe2Se2 are superconductive at 31 K and 46 K, respectively. This is the first successful report of obtaining metal-intercalated FeSe-based high-temperature superconductors using electrochemical method. It provides an effective route to synthesize metal-intercalated layered compounds for new superconductor exploration.

  7. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

    Science.gov (United States)

    Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk.

  8. Controlled Growth of ZnSe Nanocrystals by Tuning Reactivity and Amount of Zinc Precursor

    Directory of Open Access Journals (Sweden)

    Lai-Jun Zhang

    2013-01-01

    Full Text Available Zinc selenide (ZnSe nanocrystals were synthesized via a phosphine-free route using the highly reactive alkylamine-H2Se complex as selenium precursor and zinc precursors with different reactivity. The reactivity of zinc precursor was tuned by using three kinds of zinc carboxylates with different alkyl chain lengths, including zinc acetate, zinc nonanoate, and zinc stearate. The effect of the reactivity and the amount of zinc precursor on nucleation and growth of ZnSe nanocrystals were investigated by ultraviolet-visible absorption and photoluminescence spectra. Result indicates that the growth and optical property of the resulting ZnSe nanocrystals are strongly dependent on the alkyl chain length and the amount of the zinc carboxylates and both shorter alkyl chain length, and more amount of zinc carboxylate will lead to faster growth of ZnSe nanocrystals. This allows that the controlled growth and excellent optical property of high-quality ZnSe nanocrystals can be achieved by combining the different reactivity and the used amount of zinc precursor, such as by using stoichiometric and reactive Zn precursor and Se precursor or by using larger amount of more unreactive Zn precursor relative to the highly reactive alkylamine-H2Se complex precursor.

  9. Ti : sapphire laser synchronised with femtosecond Yb pump laser via nonlinear pulse coupling in Ti : sapphire active medium

    Science.gov (United States)

    Didenko, N. V.; Konyashchenko, A. V.; Konyashchenko, D. A.; Kostryukov, P. V.; Kuritsyn, I. I.; Lutsenko, A. P.; Mavritskiy, A. O.

    2017-02-01

    A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb3+-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model.

  10. Mid-IR laser oscillation in Cr2+:ZnSe planar waveguide.

    Science.gov (United States)

    Williams, J E; Fedorov, V V; Martyshkin, D V; Moskalev, I S; Camata, R P; Mirov, S B

    2010-12-06

    We demonstrate 2.6 µm mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+:ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin film sample was also used to demonstrate passive Q-switching of Er:YAG laser operating at 1.645 µm.

  11. GaN on sapphire mesa technology

    Energy Technology Data Exchange (ETDEWEB)

    Herfurth, Patrick; Men, Yakiv; Kohn, Erhard [Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein Allee 45, 89081 Ulm (Germany); Roesch, Rudolph [Institute of Optoelectronics, Albert-Einstein Allee 45, 89081 Ulm (Germany); Carlin, Jean-Francois; Grandjean, Nicolas [Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique Federal de Lausanne, 1015 Lausanne (Switzerland)

    2012-03-15

    This contribution reports on a GaN on sapphire mesa technology for lattice matched InAlN/GaN HEMTs similar to a silicon on insulator technology. Ultrathin buffer layers between 500 nm and 100 nm have been deep mesa etched down to the substrate to avoid cross talk between devices through the buffer and provide full transparency outside the active device area (of special interest to biochemical sensor applications).The heterostructure characteristics were: N{sub S}> 1.6 x 10{sup 13} cm{sup -2}, R{sub sh}< 600 {omega}/{open_square}. 0.25 {mu}m gate length HEMT device characteristics are moderate, but essentially similar down to 200 nm buffer thickness. Devices on 100 nm buffer layer are still difficult to reproduce. I{sub on}/I{sub off} was up to 10{sup 9} and sub-threshold slopes down to 90 mV/dec (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Development of the data base for a degradation model of a selenide RTG. [Radioisotope Thermoelectric Generator

    Science.gov (United States)

    Stapfer, G.; Truscello, V. C.

    1977-01-01

    The paper is concerned with the evaluation of the materials used in a selenide radioisotope thermoelectric generator (RTG). These materials are composed of n-type gadolinium selenide and n-type copper selenide. A three-fold evaluation approach is being used: (1) the study of the rate of change of the thermal conductivity of the material, (2) the investigation of the long-term stability of the material's Seebeck voltage and electrical resistivity under current and temperature gradient conditions, and (3) determination of the physical behavior and compatibility of the material with surrounding insulation at elevated temperatures. Programmatically, the third category of characteristic evaluation is being emphasized.

  13. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  14. Evolution of the sapphire industry: Rubicon Technology and Gavish

    Science.gov (United States)

    Harris, Daniel C.

    2009-05-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

  15. Scaling STI's sapphire cryocooler for applications requiring higher heat loads

    Science.gov (United States)

    Karandikar, Abhijit; Fiedler, Andreas

    2012-06-01

    Superconductor Technologies Inc. (STI) developed the Sapphire cryocooler specifically for the SuperLink® product; a high performance superconducting Radio Frequency (RF) front-end receiver used by wireless carriers such as Verizon Wireless and AT&T to improve network cell coverage and data speeds. STI has built and deployed over 6,000 systems operating 24 hours a day (24/7), 7 days a week in the field since 1999. Sapphire is an integrated free piston Stirling cycle cryocooler with a cooling capacity of 5 Watts at 77 Kelvin (K) with less than 100 Watts (W) input power. It has a field-proven Mean Time Between Failure (MTBF) of well over 1 million hours, requires zero maintenance and has logged over 250 million cumulative runtime hours. The Sapphire cooler is built on a scalable technology platform, enabling the design of machines with cooling capacities greater than 1 kilowatt (kW). This scalable platform also extends the same outstanding attributes as the Sapphire cooler, namely high reliability, zero maintenance, and compact size - all at a competitive cost. This paper will discuss emerging applications requiring higher heat loads and these attributes, describe Sapphire, and show a preliminary concept of a scaled machine with a 100 W cooling capacity.

  16. Optical and structural characterization of nickel selenide nanoparticles synthesized by simple methods

    Science.gov (United States)

    Moloto, N.; Moloto, M. J.; Coville, N. J.; Sinha Ray, S.

    2009-07-01

    A series of nickel selenide (NiSe 2, NiSe and Ni 3Se 4) nanoparticles have been synthesized by three different methods, i.e. the single-source precursor (method 1), the thermolysis of trioctylphosphine selenide (TOPSe) and nickel chloride in hexadecylamine (method 2) as well as the reaction of nickel chloride and selenium using sodium borohydride as a reducing agent in methanol and in water (method 3). The optical properties of nickel selenide synthesized from all the methods showed good nanometric characteristics with an observed blue-shift in absorption band-edge from bulk nickel selenide. The structural characteristics varied with the methods employed, with method 1 producing 10 nm spherical NiSe 2 particles, method 2 star-shaped NiSe particles, while method 3 produced hexagonal NiSe nanoparticles in methanol and rod-shaped Ni 3Se 4 particles in water.

  17. Polystyrene-supported Benzyl Selenide: An Efficient Reagent for Highly Stereocontrolled Synthesis of Substituted Olefins

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Polystyrene-supported benzyl selenide has been prepared. This novel reagent was treated with LDA to produce a selenium stabilized carbanion, which reacted with alkyl halide, followed by selenoxide syn-elimination, to give substituted olefins stereospecificly.

  18. Voltage-Controlled Sapphire Oscillator: Design, Development, and Preliminary Performance

    Science.gov (United States)

    Wang, R. T.; Dick, G. J.; Tjoelker, R. L.

    2007-08-01

    We present the design for a new short-term frequency standard, the voltage-controlled sapphire oscillator, as a practical and lower-cost alternative to a cryogenic sapphire oscillator operating at liquid helium temperatures. Performance goals are a frequency stability of 1 x 10^-14 (1 second equal to or less than tau equal to or less than 100 seconds), more than 2 years of continuous operation, and practical operability. Key elements include the sapphire resonator, low-power and long-life cryocooler, frequency compensation method, and cryo-Pound design. We report the design verification, experimental results, and test results of the cryocooler environmental sensitivity, as well as a preliminary stability measurement.

  19. Clinical Application of the Sapphire Unfolder Lens Injection System

    Institute of Scientific and Technical Information of China (English)

    Weiai Guo; Danying Zheng; Zhenyu Li; Yiyong Qian; Zhenping Zhang

    2002-01-01

    Purpose: To summarize the clinical experience of 300 cases using the Sapphire unfloder intraocular lens (IOL) injection system.Methods: After the standard phacoemulsification, an AR40e IOL was implanted using the Sapphire Unfolder. The involved problems during and after the operation were observed and analyzed.Results:The complications occurred during the operation including the crack at the haptic-optic junction in 2 cases, slight kink in the haptic in 5 cases, IOL clamp into the cartridge in 2 cases, posterior capsular rupture in 2 cases and endothelium damage in the central small area in 4 cases. All the patients recovered successfully with IOLs in good position.Conclusion: IOL implantation with the Sapphire Unfolder led to no serious complications and got the satisfactory results.

  20. A Model of the Growth of Copper Selenide Thin Films Controlled by Diffusion and Chemical Reaction

    OpenAIRE

    Bottecchia,Otávio Luiz

    1998-01-01

    A model of the growth of thin films of copper selenides is proposed. A mathematical equation that describes the kinetics of the growth is derived. Simulated results and a discussion on the results of the model are presented. A fitting procedure of literature data with the derived equation is carried out. The diffusion coefficient of copper(I) ions in copper selenide is roughly estimated.

  1. Refractive-index measurements of zinc germanium diphosphide at 300 and 77 K by use of a modified Michelson interferometer.

    Science.gov (United States)

    Gillen, Glen D; Guha, Shekhar

    2004-04-01

    A method to determine the absolute refractive index of materials available in the shape of flat wafers with parallel sides by using interferometric techniques is presented. With this method, nondestructive, sample-specific measurements can be made. The method is tested by using silicon, germanium and zinc selenide, and measurements for both the ordinary and extraordinary axes of ZnGeP2 for temperatures of 300 and 77 K are reported.

  2. Zinc selenide photoelectrodes. Efficient radiative recombination in a stable photoelectrochemical cell. Technical report

    Energy Technology Data Exchange (ETDEWEB)

    Smiley, P.M.; Biagioni, R.N.; Ellis, A.B.

    1984-05-25

    Photoluminescence (PL) and electroluminescence (EL) from single-crystal, n-type, A1-doped ZnSe (ZnSe:A1) electrodes have been studied. These samples exhibit both edge emission (lambda(max) approx. 460 nm) and subband gap emission when excited at several ultraband gap wavelengths. The latter PL band is particularly intense, with a measured radiative quantum yield of approx. 0.1 to 0.01; the transition seems at least partially self-activated (SA) in origin, based on previously reported PL data. Excited-state communication involving the two emissive states is inferred from time-resolved PL measurements. Stable photoelectrochemical cells (PEC's) can be constructed from n-ZnSe:A1 electrodes and aqueous diselenide or ditelluride electrolytes. Applied potential quenches both of the photoanodes' PL bands roughly in parallel. The extent of PL quenching is consistent with a dead-layer model previously used to describe quenching in Au-ZnSe Schottky diodes. When used as a dark cathode in aqueous, alkaline peroxydisulfate eletrolyte, EL from ZnSe:A1 electrodes is observed.

  3. Zinc selenide photoelectrodes: efficient radiative recombination in a stable photoelectrochemical cell

    Energy Technology Data Exchange (ETDEWEB)

    Smiley, P.M.; Biagioni, R.N.; Ellis, A.B.

    1984-05-01

    A study has been made of photoluminescence (PL) and electroluminescence (EL) from single-crystal n-type ZnSe:Al electrodes. It is shown that emission from the electrodes, with a measured radiative quantum yield of 0.1-0.01, competes favorably with other deactivation paths in stable efficient photoelectrochemical cells. As observed with other semiconductor electrodes, the PL of n-ZnSe:Al electrodes can be perturbed and EL initiated by interfacial charge-transfer processes. It is shown that PL quenching by applied potential is compatible with a dead-layer model used to describe such quenching in other photoelectrochemical cells and in Au-ZnSe Schottky diodes. 24 references.

  4. Effect of deposition pressure on structural, optical and electrical properties of zinc selenide thin films

    Science.gov (United States)

    Sharma, Jeewan; Tripathi, S. K.

    2011-04-01

    ZnSe thin films have been prepared by inert gas condensation method at different gas pressures. The influence of deposition pressure, on structural, optical and electrical properties of polycrystalline ZnSe films have been investigated using X-ray diffraction (XRD), optical transmission and conductivity measurements. The X-ray diffraction study reveals the sphalerite cubic structure of the ZnSe films oriented along the (1 1 1) direction. The structural parameters such as particle size [6.65-22.24 nm], strain [4.01-46.6×10-3 lin-2 m-4] and dislocation density [4.762-18.57×1015 lin m-2] have been evaluated. Optical transmittance measurements indicate the existence of direct allowed optical transition with a corresponding energy gap in the range 2.60-3.00 eV. The dark conductivity (σd) and photoconductivity (σph) measurements, in the temperature range 253-358 K, indicate that the conduction in these materials is through an activated process having two activation energies. σd and σph values decrease with the decrease in the crystallite size. The values of carrier life time have been calculated and are found to decrease with the reduction in the particle size. The conduction mechanism in present samples has been explained, and the density of surface states [9.84-21.4×1013 cm-2] and impurity concentration [4.66-31.80×1019 cm-3] have also been calculated.

  5. Structural and optical properties of zinc selenide thin films deposited by rf magnetron sputtering

    Science.gov (United States)

    Rizzo, Antonella; Caneve, Luisa; Scaglione, Salvatore; Tagliente, M. A.

    1999-09-01

    In this work, ZnSe thin films were deposited by radio frequency magnetron sputtering onto oriented silicon substrates. Three sets of samples were produced by varying the argon working gas pressure, and changing the sputtering power supply. The effect of the different growth conditions on the structural and optical properties of the ZnSe films was investigated by using XRD and FTIR spectroscopy. In particular, x-ray diffraction was used in order to study the residual strains and texture. The ZnSe coatings were grown in the cubic polymorph with the grains preferentially oriented for all the investigated pressures with the exception of 0.5 Pa. An in-plane residual stress reversal, which changed from compressive to tensile by going from the low to the high-pressure sample set, was observed. At the 0.5 Pa pressure, the ZnSe coatings were both in compressive and tensile state, according to the power supply value. These result have been correlated with the momentum of reflected neutral in order to find an exhaustive description of the deposition process. At low momentum values, the ZnSe films show tensile state, low refractive index, grains preferentially oriented, while at high momentum they were in compressive state, refractive index very alike to the bulk and grains randomly oriented.

  6. Potentiostatic Electrochemical Preparation and Characterisation of Aluminium Containing Nickel Selenide

    Directory of Open Access Journals (Sweden)

    Sandeep Gohar

    2014-01-01

    Full Text Available The wide range of properties exhibited by Al based alloy makes them suitable for different applications. Aluminium containing nickel Selenide ternary alloy possess considerable corrosion resistance as compared to their pure metal counterparts. The objective of the present work has been focused on the preparation and characterisation of its thin film. Alloying with Aluminium improve the oxidation resistance and increases the heat conductivity of the alloy. There is always a high demand for plating Al and its alloys in automotive and aerospace products, house-hold goods, and artificial jewellery etc,. The morphological and the structural studies of the electrodeposited thin film were determined by Scanning Electron Microscope (SEM images and X-Ray Diffraction Pattern (XRD while elemental composition has been done by Energy Dispersive X-Ray Spectroscopy (EDAX analysis.

  7. Photoconductive Properties of Brush Plated Copper Indium Gallium Selenide Films

    Directory of Open Access Journals (Sweden)

    N. P. Subiramaniyam

    2013-01-01

    Full Text Available Copper indium gallium selenide (CIGS films were deposited for the first time by the brush electrodeposition technique. X-ray diffraction studies indicated the formation of single phase chalcopyrite CIGS. Lattice parameters, dislocation density, and strain were calculated. Band gap of the films increased from 1.12 eV to 1.63 eV as the gallium concentration increased. Room temperature transport parameters of the films, namely, resistivity increased from 0.10 ohm cm to 12 ohm cm, mobility decreased from 125 cm2V−1s−1 to 20.9 cm2V−1s−1, and carrier concentration decreased from 4.99 × 1017 cm−3 to 2.49 × 1016 cm−3 as the gallium concentration increased. Photosensitivity of the films increased linearly with intensity of illumination and with increase of applied voltage.

  8. Selenide isotope generator for the Galileo Mission. Program final report

    Energy Technology Data Exchange (ETDEWEB)

    1979-06-01

    This final report for the Selenide Isotope Generator for the Galileo Mission (SIG/GM) documents the work performed by Teledyne Energy Systems (TES) under US Department of Energy (DOE) Contract No. DE-AC01-78ET33009 (formerly ET-78-C-01-2865) during the period April 10, 1978 to June 30, 1979. Because of technical difficulties with the thermoelectric converter being developed by the 3M Company under separate DOE contract, a Stop Work Order, dated January 29, 1979, was issued by DOE. The TES effort up to the receipt of the Stop Work Order as well as limited technical activities up to the contract conclusion on June 30, 1979 are reported.

  9. Bis(2,4-dimethoxyphenyl(phenylphosphine selenide

    Directory of Open Access Journals (Sweden)

    Alfred Muller

    2011-01-01

    Full Text Available In the title molecule, C22H23O4PSe, the P atom has a distorted tetrahedral environment formed by the selenide atom [P=Se = 2.1219 (5 Å] and three aryl rings. The orientations of the methoxy groups in the two 2,4-dimethoxyphenyl ligands are distinct, as seen from the torsion angles: C—C—O—C = 14.7 (3 and 175.97 (17° in one ligand, and −9.1 (2 and 5.1 (3° in the other. In the crystal, weak intermolecular C—H...Se interactions link the molecules into zigzag chains propagated in [010].

  10. Thermal lensing in silver gallium selenide parametric oscillator crystals.

    Science.gov (United States)

    Marquardt, C L; Cooper, D G; Budni, P A; Knights, M G; Schepler, K L; Dedomenico, R; Catella, G C

    1994-05-20

    We performed an experimental investigation of thermal lensing in silver gallium selenide (AgGaSe(2)) optical parametric oscillator crystals pumped by a 2-µm laser at ambient temperature. We determined an empirical expression for the effective thermal focusing power in terms of the pump power, beam diameter, crystal length, and absorption coefficient. This relation may be used to estimate average power limitations in designing AgGaSe(2) optical parametric oscillators. We also demonstrated an 18% slope efficiency from a 2-µm pumped AgGaSe(2) optical parametric oscillator operated at 77 K, at which temperature thermal lensing is substantially reduced because of an increase in the thermal conductivity and a decrease in the thermal index gradient dn/dT. Cryogenic cooling may provide an additional option for scaling up the average power capability of a 2-µm pumped AgGaSe(2) optical parametric oscillator.

  11. Electrochemical synthesis of alkali-intercalated iron selenide superconductors

    Science.gov (United States)

    Shen, Shi-Jie; Ying, Tian-Ping; Wang, Gang; Jin, Shi-Feng; Zhang, Han; Lin, Zhi-Ping; Chen, Xiao-Long

    2015-11-01

    Electrochemical method has been used to insert K/Na into FeSe lattice to prepare alkali-intercalated iron selenides at room temperature. Magnetization measurement reveals that KxFe2Se2 and NaxFe2Se2 are superconductive at 31 K and 46 K, respectively. This is the first successful report of obtaining metal-intercalated FeSe-based high-temperature superconductors using electrochemical method. It provides an effective route to synthesize metal-intercalated layered compounds for new superconductor exploration. Project supported by the National Natural Science Foundation of China (Grant Nos. 51322211and 91422303), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB07020100), Beijing Nova Program of China (Grant No. 2011096), and K. C. Wong Education Foundation, Hong Kong, China.

  12. In Situ Transmission Electron Microscopy of Cadmium Selenide Nanorod Sublimation.

    Science.gov (United States)

    Hellebusch, Daniel J; Manthiram, Karthish; Beberwyck, Brandon J; Alivisatos, A Paul

    2015-02-19

    In situ electron microscopy is used to observe the morphological evolution of cadmium selenide nanorods as they sublime under vacuum at a series of elevated temperatures. Mass loss occurs anisotropically along the nanorod's long axis. At temperatures close to the sublimation threshold, the phase change occurs from both tips of the nanorods and proceeds unevenly with periods of rapid mass loss punctuated by periods of relative stability. At higher temperatures, the nanorods sublime at a faster, more uniform rate, but mass loss occurs from only a single end of the rod. We propose a mechanism that accounts for the observed sublimation behavior based on the terrace-ledge-kink (TLK) model and how the nanorod surface chemical environment influences the kinetic barrier of sublimation.

  13. Blocks and residual stresses in shaped sapphire single crystals

    Science.gov (United States)

    Krymov, V. M.; Nosov, Yu. G.; Bakholdin, S. I.; Maslov, V. N.; Shul‧pina, I. L.; Nikolaev, V. I.

    2017-01-01

    The formation of blocks and residual stresses in shaped sapphire crystals grown from the melt by the Stepanov method (EFG) has been studied. The probability of block formation is higher for the growth along the c axis compared to that grown in the a-axis direction. The distribution of residual stress in sapphire crystals of tubular, rectangular and round cross section was measured by the conoscopy method. It was found that the magnitude of the residual stress increases from the center to the periphery of the crystal and reaches up to about 20 MPa. Residual stress tensor components for solid round rod and tubular single crystals were determined by numerical integration.

  14. Inversion domains in AlN grown on (0001) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  15. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  16. Copper selenide thin films by chemical bath deposition

    Science.gov (United States)

    García, V. M.; Nair, P. K.; Nair, M. T. S.

    1999-05-01

    We report the structural, optical, and electrical properties of thin films (0.05 to 0.25 μm) of copper selenide obtained from chemical baths using sodium selenosulfate or N,N-dimethylselenourea as a source of selenide ions. X-ray diffraction (XRD) studies on the films obtained from baths using sodium selenosulfate suggest a cubic structure as in berzelianite, Cu 2- xSe with x=0.15. Annealing the films at 400°C in nitrogen leads to a partial conversion of the film to Cu 2Se. In the case of films obtained from the baths containing dimethylselenourea, the XRD patterns match that of klockmannite, CuSe. Annealing these films in nitrogen at 400°C results in loss of selenium, and consequently a composition rich in copper, similar to Cu 2- xSe, is reached. Optical absorption in the films result from free carrier absorption in the near infrared region with absorption coefficient of ˜10 5 cm -1. Band-to-band transitions which gives rise to the optical absorption in the visible-ultraviolet region may be interpreted in terms of direct allowed transitions with band gap in the 2.1-2.3 eV range and indirect allowed transitions with band gap 1.2-1.4 eV. All the films, as prepared and annealed, show p-type conductivity, in the range of (1-5)×10 3 Ω -1 cm -1. This results in high near infrared reflectance, of 30-80%.

  17. Optical, laser spectroscopic, and electrical characterization of transion metal doped zinc selenide and zinc sulfide nano-and-microcrystals

    Science.gov (United States)

    Kim, Changsu

    Middle-infrared lasers operating over a "molecular fingerprint" 2-15 mum spectral range are in great demand for a variety of applications. One of the best choices for lasing in the 2-5 mum spectral range is direct oscillation from divalent transition metal ions (TM2+: Cr 2+, Fe2+, Co2+)-doped wide bandgap II-VI semiconductor crystals. There are three major objectives in this dissertation: (1) Realize and study middle-infrared electroluminescence of n and p-type, Cr doped bulk ZnSe crystals. We have demonstrated a method of ZnSe crystals thermal-diffusion doping with donor (In, Zn, and Al) and acceptor (Cu, Ag, and N through CrN) impurities resulting in n and p-type conductivity of Cr:ZnSe. We are the first to our knowledge to obtain mid-IR electroluminescence in nominally p-type Cr:Ag:ZnSe, which could prove valuable for developing of novel mid-IR laser diodes. (2) En route to low dimensional gain material, develop simple method for making microscopic laser active Cr doped ZnSe, ZnS and CdSe powders, realize and study their laser spectroscopic characteristics. We have demonstrated a simple physical method of Cr2+:ZnSe, ZnS and CdSe powder fabrication with average sizes below ˜ 10mum and ˜1mum (eliminating stage of bulk crystal growth) and demonstrated first ever mid-IR random lasing on these powders under optical excitation. In addition, we have examine suspensions and polymer films impregnated with Cr:II-VI powders for random lasing in the mid-IR. The powder, suspension and polymer samples are fabricated and characterized through the measurement of photoluminescence (PL) spectra, PL kinetics, and lasing threshold energy. (3) En route to low dimensional gain material, develop method for making laser active Cr, Co, and Fe doped ZnSe and ZnS quantum dots (QD), realize and study their laser spectroscopic characteristics. We have demonstrated a novel method of TM doped II-VI QDs fabrication based on laser ablation in liquid and Ar environment. TM doped II-VI QDs demonstrated strong mid-IR luminescence. And we also demonstrated the first mid-IR (2-3 mum) random lasing at room temperature of Cr2+:ZnS QD powders. The results obtained in this work open a new pathway for development of low-cost optically and electrically pumped broadly tunable mid-IR laser sources. Keyword: Middle-Infrared lasers, Electroluminescence, Transition Metal ions, powder random lasers, nanocrystal lasers, Polymer film and Suspension.

  18. THE DEVELOPMENT OF 6.7% EFFICIENT COPPER ZINC INDIUM SELENIDE DEVICES FROM COPPER ZINC INDIUM SULFIDE NANOCRYSTAL INKS

    OpenAIRE

    Graeser, Brian Kemp

    2014-01-01

    As solar cell absorber materials, alloys of CuIn(S,Se)2 and Zn(S,Se) provide an opportunity to reduce the usage of indium along with the ability to tune the band gap. Here we report successful synthesis of alloyed (CuInS2 )0.5(ZnS)0.5 nanocrystals by a method that solely uses oleylamine as the liquid medium for synthesis. The reactive sintering of a thin film of these nanocrystals via selenization at 500 °C results in a uniform composition alloy (CuIn(S,Se)2 )0.5 (Zn(S,Se)) 0.5 layer with mic...

  19. Growth mechanism and strain relaxation in zinc selenide and cadmium telluride/zinc telluride semiconductor thin films

    Science.gov (United States)

    Wei, Hsiang-Yi

    The application of II--VI semiconductor devices such as blue-green light emitters (ZnSe-based materials) and HgCdTe infrared detectors are limited by the high density of defects and lack of large size substrates that are lattice matched and chemically compatible with the films. By growing a single thick buffer layer or a composite buffer structure of dissimilar materials can lead to a final top layer that is structurally and chemically compatible with the active layer of the device. Low defect density and flat surface morphology are the basic requirements for an applicable buffer layer. In this work, transmission electron microscopy is used to investigate the crystalline structure and defect generation mechanism in buffer layers for the growth of ZnSe-based and HgCdTe films. We investigate the interface chemistry, defect density, and growth mechanism of ZnSe films grown on GaAs substrates with different surface processing techniques. Undesirable high density of funnel defects (˜1010 cm-2) are always observed when the growth is performed on the epi-ready GaAs. We also observe that Sb can act as a surfactant and promote a truly layer-by-layer growth mode when the ZnSe film is grown on Sb-stabilized GaAs substrates. The defect density can be reduced to values as low as in the low 103 cm-2 range, which is the lowest defect density ever reported for ZnSe films. Moreover, the ZnSe surface exhibits a characteristic brick-like pattern for all of the substrate preparation methods used (except for Sb-stabilized GaAs) and the thickness of the ZnSe epilayers for films grown at ˜280--330°C. At a much higher growth temperature (410°C), a corrugated surface forms with high periodicity along the [110] direction. We propose a kinetics-limited surface roughness mechanism for the ZnSe films based on a competition of nucleation of 2D islands followed by step evolution. In the CdTe/ZnTe/Si epitaxial system, we investigated the influence of different surface precursors on the growth mechanism and defect density in the films. For As---precursor on the Si surface, Te adsorption on the terraces is inhibited and its migration to the step edges is enhanced. Therefore, the growth is expected to proceed in a step-flow growth mode. A strain relaxation mechanism including misfit dislocation generation, twin formation, and crystal tilt is proposed to account for the large lattice mismatch (f = 12.3%) in this system.

  20. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    Directory of Open Access Journals (Sweden)

    Sung Bo Lee

    2015-07-01

    Full Text Available In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al2O3 with the substitution of Si for Al.

  1. Structure of shaped sapphire grown from multicapillary dies

    Science.gov (United States)

    Dobrovinskaya, E. R.; Litvinov, L. A.; Pischik, V. V.

    1990-07-01

    Peculiarities in grain structure development have been studied in sapphire crystals grown with multicapillary channels in the die to feed melt to the crystallization zone. A new mechanism of grain boundary formation based on gas-bubble collapse at the crystal-melt interface is proposed.

  2. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison t

  3. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  4. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    Science.gov (United States)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-03-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

  5. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials

    Science.gov (United States)

    2005-08-24

    the Cr in sapphire could also permit the construction of white light LEDs . Ultimately, an integrated III-V Nitride optical pump for Ti:Sapphire could...substrates by MOCVD. 2. Characterization of doped sapphire/ InGaN structures byPL to simulate electrical injection by laser or LED device structures Part 2 1...Cr:sapphire substrate. Solid line is the spectrum of blue and red light emitted by InGaN LED epitaxially grown on Cr:sapphire substrate. The light was collected

  6. Interaction between nanoparticles generated by zinc chloride treatment and oxidative responses in rat liver

    Directory of Open Access Journals (Sweden)

    Azzouz I

    2013-12-01

    Full Text Available Inès Azzouz, Hamdi Trabelsi, Amel Hanini, Soumaya Ferchichi, Olfa Tebourbi, Mohsen Sakly, Hafedh AbdelmelekLaboratory of Integrative Physiology, Faculty of Sciences of Bizerte, Carthage University, TunisiaAbstract: The aim of the present study was to investigate the interaction of zinc chloride (3 mg/kg, intraperitoneally [ip] in rat liver in terms of the biosynthesis of nanoparticles. Zinc treatment increased zinc content in rat liver. Analysis of fluorescence revealed the presence of red fluorescence in the liver following zinc treatment. Interestingly, the co-exposure to zinc (3 mg/kg, ip and selenium (0.20 mg/L, per os [by mouth] led to a higher intensity of red fluorescence compared to zinc-treated rats. In addition, X-ray diffraction measurements carried out on liver fractions of zinc-treated rats point to the biosynthesis of zinc sulfide and/or selenide nanocomplexes at nearly 51.60 nm in size. Moreover, co-exposure led to nanocomplexes of about 72.60 nm in size. The interaction of zinc with other mineral elements (S, Se generates several nanocomplexes, such as ZnS and/or ZnSe. The nanocomplex ZnX could interact directly with enzyme activity or indirectly by the disruption of mineral elements' bioavailability in cells. Subacute zinc or selenium treatment decreased malondialdehyde levels, indicating a drop in lipid peroxidation. In addition, antioxidant enzyme assays showed that treatment with zinc or co-treatment with zinc and selenium increased the activities of glutathione peroxidase, catalase, and superoxide dismutase. Consequently, zinc complexation with sulfur and/or selenium at nanoscale level could enhance antioxidative responses, which is correlated to the ratio of number of ZnX nanoparticles (X=sulfur or X=selenium to malondialdehyde level in rat liver.Keywords: nanocomplexes biosynthesis, antioxidative responses, X-ray diffraction, fluorescence microscopy, liver

  7. SEMICONDUCTOR MATERIALS: Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering

    Science.gov (United States)

    Xiaoli, Yang; Nuofu, Chen; Zhigang, Yin; Xingwang, Zhang; Yang, Li; Jingbi, You; Yu, Wang; Jingjing, Dong; Min, Cui; Yun, Gao; Tianmao, Huang; Xiaofeng, Chen; Yanshuo, Wang

    2010-09-01

    Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 °C for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 °C. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 °C with best crystallization.

  8. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  9. Controlled hydrothermal synthesis and structural characterization of a nickel selenide series.

    Science.gov (United States)

    Zhuang, Zhongbin; Peng, Qing; Zhuang, Jing; Wang, Xun; Li, Yadong

    2005-12-16

    A series of nickel selenides (NiSe2 microcrystals, Ni(1-x)Se and Ni3Se2 microspheres) has been successfully synthesized through a convenient, low-temperature hydrothermal method. A good nucleation and growth environment has been created by forming a uniform and transparent solution reaction system. The compositions (including the x value of Ni(1-x)Se), phase structures, as well as the morphologies of nickel selenides, can be controlled by adjusting the Ni/Se ratio of the raw materials, the pH, the reaction temperatures and times, and so forth. The newly produced Se microspheres in the system have been used as both reactant and in situ template to the Ni(1-x)Se microspheres. It is found that Ni(1-x)Se microspheres act as the intermediate precursor during the formation of Ni3Se2 microspheres. Under certain conditions, hexagonal NiSe microspheres can be converted into rhombohedral NiSe nanowires in solution. The formation mechanisms of a series of nickel selenides has been investigated in detail by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. This work has provided a general, simple, and effective method to control the composition, phase structure, and morphology of metal selenides in aqueous solution, which will be important for inorganic synthesis methodology and further applications of selenides.

  10. Using different chemical methods for deposition of copper selenide thin films and comparison of their characterization.

    Science.gov (United States)

    Güzeldir, Betül; Sağlam, Mustafa

    2015-11-05

    Different chemical methods such as Successive Ionic Layer Adsorption and Reaction (SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide thin films on the glass substrates. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) spectroscopy and UV-vis spectrophotometry. The XRD and SEM studies showed that all the films exhibit polycrystalline nature and crystallinity of copper selenide thin films prepared with spray pyrolysis greater than spin coating and SILAR methods. From SEM and AFM images, it was observed copper selenide films were uniform on the glass substrates without any visible cracks or pores. The EDX spectra showed that the expected elements exist in the thin films. Optical absorption studies showed that the band gaps of copper selenide thin films were in the range 2.84-2.93 eV depending on different chemical methods. The refractive index (n), optical static and high frequency dielectric constants (ε0, ε∞) values were calculated by using the energy bandgap values for each deposition method. The obtained results from different chemical methods revealed that the spray pyrolysis technique is the best chemical deposition method to fabricate copper selenide thin films. This absolute advantage was lead to play key roles on performance and efficiency electrochromic and photovoltaic devices.

  11. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    Science.gov (United States)

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells.

  12. Cu Vacancies Boost Cation Exchange Reactions in Copper Selenide Nanocrystals.

    Science.gov (United States)

    Lesnyak, Vladimir; Brescia, Rosaria; Messina, Gabriele C; Manna, Liberato

    2015-07-29

    We have investigated cation exchange reactions in copper selenide nanocrystals using two different divalent ions as guest cations (Zn(2+) and Cd(2+)) and comparing the reactivity of close to stoichiometric (that is, Cu2Se) nanocrystals with that of nonstoichiometric (Cu(2-x)Se) nanocrystals, to gain insights into the mechanism of cation exchange at the nanoscale. We have found that the presence of a large density of copper vacancies significantly accelerated the exchange process at room temperature and corroborated vacancy diffusion as one of the main drivers in these reactions. Partially exchanged samples exhibited Janus-like heterostructures made of immiscible domains sharing epitaxial interfaces. No alloy or core-shell structures were observed. The role of phosphines, like tri-n-octylphosphine, in these reactions, is multifaceted: besides acting as selective solvating ligands for Cu(+) ions exiting the nanoparticles during exchange, they also enable anion diffusion, by extracting an appreciable amount of selenium to the solution phase, which may further promote the exchange process. In reactions run at a higher temperature (150 °C), copper vacancies were quickly eliminated from the nanocrystals and major differences in Cu stoichiometries, as well as in reactivities, between the initial Cu2Se and Cu(2-x)Se samples were rapidly smoothed out. These experiments indicate that cation exchange, under the specific conditions of this work, is more efficient at room temperature than at higher temperature.

  13. Thermoelectric characterization of individual bismuth selenide topological insulator nanoribbons

    Science.gov (United States)

    Tang, Hao; Wang, Xiaomeng; Xiong, Yucheng; Zhao, Yang; Zhang, Yin; Zhang, Yan; Yang, Juekuan; Xu, Dongyan

    2015-04-01

    Bismuth selenide (Bi2Se3) nanoribbons have attracted tremendous research interest recently to study the properties of topologically protected surface states that enable new opportunities to enhance the thermoelectric performance. However, the thermoelectric characterization of individual Bi2Se3 nanoribbons is rare due to the technological challenges in the measurements. One challenge is to ensure good contacts between the nanoribbon and electrodes in order to determine the thermal and electrical properties accurately. In this work, we report the thermoelectric characterization of individual Bi2Se3 nanoribbons via a suspended microdevice method. Through careful measurements, we have demonstrated that contact thermal resistance is negligible after the electron-beam-induced deposition (EBID) of platinum/carbon (Pt/C) composites at the contacts between the nanoribbon and electrodes. It is shown that the thermal conductivity of the Bi2Se3 nanoribbons is less than 50% of the bulk value over the whole measurement temperature range, which can be attributed to enhanced phonon boundary scattering. Our results indicate that intrinsic Bi2Se3 nanoribbons prepared in this work are highly doped n-type semiconductors, and therefore the Fermi level should be in the conduction band and no topological transport behavior can be observed in the intrinsic system.

  14. Characterization of single phase copper selenide nanoparticles and their growth mechanism

    Science.gov (United States)

    Patidar, D.; Saxena, N. S.

    2012-03-01

    The high quality Cu3Se2 phase of copper selenide nanoparticles was synthesized through the solution-phase chemical reaction between copper and selenium. In this synthesis process, hydrazine hydrate acts as reducing agent whereas ethylene glycol controls the nucleation and growth of particles. An effort has been made to explain the growth mechanism to form copper selenide nanoparticles through the coordination of selenium to the Cu2+ complexes with OH groups of ethylene glycol. Result indicates the formation of Cu3Se2 single phase nanoparticles. The particles with the average particle size 25 nm are spherical in shape having tetragonal structure. The particles are well crystallized having 94% degree of crystallinity. An effort has also been made to determine the energy band gap of copper selenide nanoparticles through the absorption spectra.

  15. Ambient Facile Synthesis of Gram-Scale Copper Selenide Nanostructures from Commercial Copper and Selenium Powder.

    Science.gov (United States)

    Chen, Xin Qi; Li, Zhen; Dou, Shi Xue

    2015-06-24

    Grams of copper selenides (Cu(2-x)Se) were prepared from commercial copper and selenium powders in the presence of thiol ligands by a one-pot reaction at room temperature. The resultant copper selenides are a mixture of nanoparticles and their assembled nanosheets, and the thickness of nanosheets assembled is strongly dependent on the ratio of thiol ligand to selenium powder. The resultant Cu(2-x)Se nanostructures were treated with hydrazine solution to remove the surface ligands and then explored as a potential thermoelectric candidate in comparison with commercial copper selenide powders. The research provides a novel ambient approach for preparation of Cu(2-x)Se nanocrystallines on a large scale for various applications.

  16. High-temperature conductivity in chemical bath deposited copper selenide thin films

    Science.gov (United States)

    Dhanam, M.; Manoj, P. K.; Prabhu, Rajeev. R.

    2005-07-01

    This paper reports high-temperature (305-523 K) electrical studies of chemical bath deposited copper (I) selenide (Cu 2-xSe) and copper (II) selenide (Cu 3Se 2) thin films. Cu 2-xSe and Cu 3Se 2 have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu 2-xSe and Cu 3Se 2 have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage.

  17. Peroxidase-like activity of nanocrystalline cobalt selenide and its application for uric acid detection.

    Science.gov (United States)

    Zhuang, Quan-Quan; Lin, Zhi-Hang; Jiang, Yan-Cheng; Deng, Hao-Hua; He, Shao-Bin; Su, Li-Ting; Shi, Xiao-Qiong; Chen, Wei

    2017-01-01

    Dendrite-like cobalt selenide nanostructures were synthesized from cobalt and selenium powder precursors by a solvothermal method in anhydrous ethylenediamine. The as-prepared nanocrystalline cobalt selenide was found to possess peroxidase-like activity that could catalyze the reaction of peroxidase substrates in the presence of H2O2. A spectrophotometric method for uric acid (UA) determination was developed based on the nanocrystalline cobalt selenide-catalyzed coupling reaction between N-ethyl-N-(3-sulfopropyl)-3-methylaniline sodium salt and 4-aminoantipyrine (4-AAP) in the presence of H2O2. Under optimum conditions, the absorbance was proportional to the concentration of UA over the range of 2.0-40 μM with a detection limit of 0.5 μM. The applicability of the proposed method has been validated by determination of UA in human serum samples with satisfactory results.

  18. Ti:sapphire laser with long-pulse lamp pumping

    Science.gov (United States)

    Koselja, Michael P.; Kubelka, Jiri; Kvapil, Jiri

    1992-06-01

    Lamp pumping of Ti:Sapphire has some advantages over laser pumping and represents some interest due to possible applications. The paper will present laser behavior of Ti:Sapphire under very long lamp pulse pumping. Pulse lamp duration (FWHM) was more than 100 times greater than the lifetime of Ti3+. Output energy with no tuning element was achieved greater than 1.5 J with 0.12% electrical-to-optical efficiency. Dimensions of the rod used was 7 mm in diameter and 148 mm in length. The doping level of Ti3+ was 0.09% Ti2O3 in the rod. Tuning characteristics with different tuning elements are also presented. Further development to obtain CW lamp pumping operation will be discussed.

  19. A GRASP for Next Generation Sapphire Image Acquisition Scheduling

    Directory of Open Access Journals (Sweden)

    Yang Wang

    2016-01-01

    Full Text Available This paper investigates an image acquisition scheduling problem for a Canadian surveillance-of-space satellite named Sapphire that takes images of deep space Earth-orbiting objects. For a set of resident space objects (RSOs that needs to be imaged within the time horizon of one day, the Sapphire image acquisition scheduling (SIAS problem is to find a schedule that maximizes the “Figure of Merit” of all the scheduled RSO images. To address the problem, we propose an effective GRASP heuristic that alternates between a randomized greedy constructive procedure and a local search procedure. Experimental comparisons with the currently used greedy algorithm are presented to demonstrate the merit of the proposed algorithm in handling the SIAS problem.

  20. AlN growth on sapphire substrate by ammonia MBE

    Science.gov (United States)

    Mansurov, V. G.; Nikitin, A. Yu.; Galitsyn, Yu. G.; Svitasheva, S. N.; Zhuravlev, K. S.; Osvath, Z.; Dobos, L.; Horvath, Z. E.; Pecz, B.

    2007-03-01

    Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are investigated. Surface morphology evolution during AlN growth is studied in situ by reflection high energy electron diffraction and ex situ by atomic force microscopy. It is found that the surfaces of AlN layers thicker than 100 nm have two major features: a quite smooth background and noticeable amount of hillocks. The influence of growth conditions on the AlN surface morphology is studied in order to find a way for reducing of the hillocks density. A modification of nitridated sapphire surface by small amount of Al (1-2 monolayers) with subsequent treatment of the surface under ammonia flux is proposed. An improvement of AlN surface morphology of the layers grown on the modified surfaces is demonstrated.

  1. Measurements of prompt radiation induced conductivity of alumina and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Hartman, E. Frederick [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Zarick, Thomas Andrew [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sheridan, Timothy J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Preston, Eric F. [ITT Coporation, Colorado Springs, CO (United States)

    2011-04-01

    We performed measurements of the prompt radiation induced conductivity in thin samples of Alumina and Sapphire at the Little Mountain Medusa LINAC facility in Ogden, UT. Five mil thick samples were irradiated with pulses of 20 MeV electrons, yielding dose rates of 1E7 to 1E9 rad/s. We applied variable potentials up to 1 kV across the samples and measured the prompt conduction current. Analysis rendered prompt conductivity coefficients between 1E10 and 1E9 mho/m/(rad/s), depending on the dose rate and the pulse width for Alumina and 1E7 to 6E7 mho/m/(rad/s) for Sapphire.

  2. Color Enhancement by Diffusion of Beryllium in Dark Blue Sapphire

    Institute of Scientific and Technical Information of China (English)

    Kyungj in Kim; Yongkil Ahn

    2016-01-01

    Diffusion of beryllium was performed on dark blue sapphire from China and Australia.The samples were heated with beryllium as a dopant in a furnace at 1 600 ℃ for 42 h in air.After beryllium diffusion,sam-ples were analyzed by UV-Vis,FTIR,and WD-XRF spectroscopy.After heat-treatment with Be as a catalyst, the irons of the ferrous state were changed to the ferric state.Therefore,reaction of Fe2+/Ti4+ IVCT was de-creased.The absorption peaks at 3 309 cm-1 attributed to OH radical were disappeared completely due to carry out heat treatment.Consequently,the intensity of absorption band was decreased in the visible region.Espe-cially,decreased absorption band in the vicinity of 570 nm was responsible for the lighter blue color.There-fore,we confirmed that the dark blue sapphires from China and Australia were changed to vivid blue.

  3. Ordered gold nanostructures on sapphire surfaces: Fabrication and optical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Konovko, A. A. [Moscow State University (Russian Federation); Smirnov, I. S. [Moscow State University of Electronics and Mathematics (Russian Federation); Roshchin, B. S.; Volkov, Yu. O. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Angelutz, A. A.; Andreev, A. V.; Shkurinov, A. P. [Moscow State University (Russian Federation); Kanevskii, V. M.; Asadchikov, V. E. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The possibilities of obtaining ordered gold nanoarrays on sapphire surfaces with oriented nanorelief are demonstrated. The structures are morphologically described using atomic force microscopy data. A study of the angular dependence of the reflectivity in the visible range of electromagnetic waves has revealed some features which are likely to indicate surface plasmon-polariton excitation at the air-gold interface under exposure to p-polarized radiation. The experimental results are found to be in good agreement with the theoretical calculations.

  4. Route to 100 TW Ti: Sapphire laser at repetitive mode

    Directory of Open Access Journals (Sweden)

    Teng Hao

    2013-11-01

    Full Text Available We demonstrated a 100 TW-class femtosecond Ti: sapphire laser running at repetition rate of 0.1 Hz by adding a stage amplifier in the 20 TW/10 Hz laser facility (XL-II. Pumping the new stage amplifier with the 25 J green Nd:glass laser, we successfully upgraded the laser energy to 3.4 J with duration of 29 fs, corresponding to a peak power of 117 TW.

  5. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  6. Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulator Bismuth Selenide

    Science.gov (United States)

    Chen, Ching-Tzu; Liu, Luqiao; Richardella, Anthony; Garate, Ion; Zhu, Yu; Samarth, Nitin

    2015-03-01

    In this talk, we will demonstrate that the helical spin texture on topological insulator (TI) surfaces can be electrically detected using four-terminal tunnel junction devices with ferromagnetic top electrodes. Consistent results are obtained in both the Edelstein and spin-galvanic effect configurations, allowing a quantitative determination of the charge-spin conversion efficiency in bismuth selenide. By applying finite DC biases at the junction, we further extract the energy dependence of the effective spin polarization in bismuth selenide. The observed temperature stability up to 200K suggests that TIs can be highly promising for room-temperature spintronics applications

  7. Metal Selenides as Efficient Counter Electrodes for Dye-Sensitized Solar Cells.

    Science.gov (United States)

    Jin, Zhitong; Zhang, Meirong; Wang, Min; Feng, Chuanqi; Wang, Zhong-Sheng

    2017-04-18

    Solar energy is the most abundant renewable energy available to the earth and can meet the energy needs of humankind, but efficient conversion of solar energy to electricity is an urgent issue of scientific research. As the third-generation photovoltaic technology, dye-sensitized solar cells (DSSCs) have gained great attention since the landmark efficiency of ∼7% reported by O'Regan and Grätzel. The most attractive features of DSSCs include low cost, simple manufacturing processes, medium-purity materials, and theoretically high power conversion efficiencies. As one of the key materials in DSSCs, the counter electrode (CE) plays a crucial role in completing the electric circuit by catalyzing the reduction of the oxidized state to the reduced state for a redox couple (e.g., I3(-)/I(-)) in the electrolyte at the CE-electrolyte interface. To lower the cost caused by the typically used Pt CE, which restricts the large-scale application because of its low reserves and high price, great effort has been made to develop new CE materials alternative to Pt. A lot of Pt-free electrocatalysts, such as carbon materials, inorganic compounds, conductive polymers, and their composites with good electrocatalytic activity, have been applied as CEs in DSSCs in the past years. Metal selenides have been widely used as electrocatalysts for the oxygen reduction reaction and light-harvesting materials for solar cells. Our group first expanded their applications to the DSSC field by using in situ-grown Co0.85Se nanosheet and Ni0.85Se nanoparticle films as CEs. This finding has inspired extensive studies on developing new metal selenides in order to seek more efficient CE materials for low-cost DSSCs, and a lot of meaningful results have been achieved in the past years. In this Account, we summarize recent advances in binary and mutinary metal selenides applied as CEs in DSSCs. The synthetic methods for metal selenides with various morphologies and stoichiometric ratios and deposition

  8. Heteroepitaxy of gallium-selenide on silicon(100) and (111): New silicon-compatible semiconductor thin films for nano structure formation

    Science.gov (United States)

    Ohta, Taisuke

    Silicon has been the backbone of modern electronics for decades; however, it is not readily compatible with some new types of electronics, such as optoelectronics or spintronics. We aim at overcoming this limitation by combining gallium-selenide (GaxSey) materials with silicon (Si) through heteroepitaxial growth. GaxSey materials are compatible with Si, and are optically and potentially magnetically active semiconductors. Their unusual crystal structures, layered GaSe and defected zinc-blende Ga2Se 3, may be exploited for unprecedented nanostructure formations. This dissertation demonstrates that GaxSey thin films can be grown epitaxially on Si(100) and (111) substrates into various nanostructure forms, namely 0-dimensional (0-D) "dots", 1-D "wires", 2-D "layers", and 3-D "bulk". We have found that hexagonal layered GaSe is formed on Si(111) with or without arsenic termination (Si(111):As), and defected zinc-blende Ga2Se3 is formed on arsenic terminated Si(100) (Si(100):As). The surfaces of GaSe/Si(111) and Ga 2Se3/Si(100):As are covered by triangle nanodots and oriented nanowire structures, respectively. We propose that different symmetry and bonding of the substrate surfaces induces different configurations of vacancies, resulting in the distinct surface nanostructures. We have achieved a thorough understanding for nanostructure formations of GaxSey by considering vacancies and surfaces as additional "elements" for stabilizing the structures. In contrast to layered GaSe/Si(111), we have found that Ga2Se3-GaAs alloy is formed in a zinc-blende phase at the interface of GaSe/Si(111):As. This signifies the bonding configuration of each element is responsible for determining the local composition; however, the atomic arrangement defined by the substrate symmetry plays a more decisive role in selecting GaxSey crystal structure for Ga xSey/Si heteroepitaxy. Through this study, we propose a generalized concept describing the stable structures of the selenide materials

  9. SINGLE-CRYSTAL SAPPHIRE OPTICAL FIBER SENSOR INSTRUMENTATION

    Energy Technology Data Exchange (ETDEWEB)

    A. Wang; G. Pickrell; R. May

    2002-09-10

    Accurate measurement of temperature is essential for the safe and efficient operation and control of a wide range of industrial processes. Appropriate techniques and instrumentation are needed depending on the temperature measurement requirements in different industrial processes and working environments. Harsh environments are common in many industrial applications. These harsh environments may involve extreme physical conditions, such as high-temperature, high-pressure, corrosive agents, toxicity, strong electromagnetic interference, and high-energy radiation exposure. Due to these severe environmental conditions, conventional temperature sensors are often difficult to apply. This situation has opened a new but challenging opportunity for the sensor society to provide robust, high-performance, and cost-effective temperature sensors capable of operating in those harsh environments. The focus of this research program has been to develop a temperature measurement system for temperature measurements in the primary and secondary stages of slagging gasifiers. For this application the temperature measurement system must be able to withstand the extremely harsh environment posed by the high temperatures and corrosive agents present in these systems. Real-time, accurate and reliable monitoring of temperature for the coal gasification process is important to realize the full economic potential of these gasification systems. Long life and stability of operation in the high temperature environment is essential for the temperature measurement system to ensure the continuous running of the coal gasification system over the long term. In this high temperature and chemically corrosive environment, rather limited high temperature measurement techniques such as high temperature thermocouples and optical/acoustic pyrometers are available, each with their own limitations. In this research program, five different temperature sensing schemes based on the single crystal sapphire

  10. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  11. Ga/Mg ratio as a new geochemical tool to differentiate magmatic from metamorphic blue sapphires

    Science.gov (United States)

    Peucat, J. J.; Ruffault, P.; Fritsch, E.; Bouhnik-Le Coz, M.; Simonet, C.; Lasnier, B.

    2007-10-01

    Using ICP-MS-LA analyses, we demonstrate that the use of the Ga/Mg ratio, in conjunction with the Fe concentration, is an efficient tool in discriminating between "metamorphic" and "magmatic" blue sapphires. Magmatic blue sapphires found in alkali basalts (e.g. southeastern Asia, China, Africa) are commonly medium-rich to rich in Fe (with average contents between 2000 and 11000 ppm), high in Ga (> 140 ppm), and low in Mg (generally 10). Conversely, metamorphic blue sapphires found in basalts (e.g. Pailin pastel) and in metamorphic terrains (e.g. Mogok, Sri Lanka, Ilakaka) are characterized by low average iron contents ( 60 ppm) with low average Ga/Mg ratios (< 10). Basaltic magmatic sapphires have Fe, Ga and Mg contents similar to those obtained for primary magmatic sapphires found in the Garba Tula syenite. This suggests that these both sets of sapphires have a possible common "syenitic" origin, as previously proposed from other criteria. In addition, plumasite-related sapphires and metamorphic sapphires also exhibit similar composition in trace elements. Based on results from the present study, we suggest that fluid circulations during a metamorphic stage produced metasomatic exchanges between mafic and acidic rocks (plumasite model), thus explaining the high Mg contents and converging Ga/Mg ratios observed in metamorphic sapphires.

  12. Impact of atmospheric species on copper indium gallium selenide solar cell stability: An overview

    NARCIS (Netherlands)

    Theelen, M.

    2016-01-01

    An overview of the measurement techniques and results of studies on the stability of copper indium gallium selenide (CIGS) solar cells and their individual layers in the presence of atmospheric species is presented: in these studies, Cu(In,Ga)Se2 solar cells, their molybdenum back contact, and their

  13. A simple and effective approach to the synthesis of alkynyl selenides from terminal alkynes

    Institute of Scientific and Technical Information of China (English)

    Barahman Movassagh; Mozhgan Navidi

    2012-01-01

    Alkynyl selenides were prepared under very mild conditions by reacting terminal alkynes with respective diorganic diselenides in the presence of potassium t-butoxide.The advantages of this protocol include the use of readily available substrates and reagent and good yield of the products.

  14. The bulk modulus of cubic spinel selenides: an experimental and theoretical study

    DEFF Research Database (Denmark)

    Waskowska, A.; Gerward, Leif; Olsen, J.S.

    2009-01-01

    It is argued that mainly the selenium sublattice determines the overall compressibility of the cubic spinel selenides, AB2Se4, and that the bulk modulus for these compounds is about 100GPa. The hypothesis is supported by experiments using high-pressure X-ray diffraction and synchrotron radiation...

  15. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ► Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ► The fabricated white LEDs show good white balance. ► CdSe QDs present well green to yellow band luminescence. ► CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  16. Polystyrene-supported Selenides and Selenoxide:Versatile Routes to Synthesize Allylic Alcohols

    Institute of Scientific and Technical Information of China (English)

    Wei Ming XU; You Chu ZHANG; Xian HUANG

    2003-01-01

    Several polystyrene-supported selenides and selenoxide have been prepared firstly. These novel reagents were treated with LDA to produce selenium stabilized carbanions, which reacted with aldehydes and alkyl halides, followed by selenoxide syn-elimination and [2,3] sigmatropic rearrangement respectively to give Z-allylic alcohols stereoselectively.

  17. Surface-initiated atom transfer radical polymerization-induced transformation of selenium nanowires into copper selenide@polystyrene core-shell nanowires.

    Science.gov (United States)

    Wang, Michael C P; Gates, Byron D

    2013-10-09

    This Article reports the first preparation of cuprous and cupric selenide nanowires coated with a ∼5 nm thick sheath of polystyrene (copper selenide@polystyrene). These hybrid nanostructures are prepared by the transformation of selenium nanowires in a one-pot reaction, which is performed under ambient conditions. The composition, purity, and crystallinity of the copper selenide@polystyrene products were assessed by scanning transmission electron microscopy, electron energy-loss spectroscopy, X-ray powder diffraction, and X-ray photoelectron spectroscopy techniques. We determined that the single crystalline selenium nanowires are converted into polycrystalline copper selenide@polystyrene nanowires containing both cuprous selenide and cupric selenide. The product is purified through the selective removal of residual, non-transformed selenium nanowires by performing thermal evaporation below the decomposition temperature of these copper selenides. Powder X-ray diffraction of the purified copper selenide nanowires@polystyrene identified the presence of hexagonal, cubic, and orthorhombic phases of copper selenide. These purified cuprous and cupric selenide@polystyrene nanowires have an indirect bandgap of 1.44 eV, as determined by UV-vis absorption spectroscopy. This new synthesis of polymer-encapsulated nanoscale materials may provide a method for preparing other complex hybrid nanostructures.

  18. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  19. Detection of beryllium treatment of natural sapphires by NRA

    Science.gov (United States)

    Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.

    2010-06-01

    Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.

  20. Thermal Control of a Dual Mode Parametric Sapphire Transducer

    CERN Document Server

    Belfi, Jacopo; De Michele, Andrea; Gabbriellini, Gianluca; Mango, Francesco; Passaquieti, Roberto

    2010-01-01

    We propose a method to control the thermal stability of a sapphire dielectric transducer made with two dielectric disks separated by a thin gap and resonating in the whispering gallery (WG) modes of the electromagnetic field. The simultaneous measurement of the frequencies of both a WGH mode and a WGE mode allows one to discriminate the frequency shifts due to gap variations from those due to temperature instability. A simple model, valid in quasi equilibrium conditions, describes the frequency shift of the two modes in terms of four tuning parameters. A procedure for the direct measurement of them is presented.

  1. Ultrafast, ultrahigh-peak power Ti:sapphire laser system

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

    2001-01-01

    We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

  2. Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

    Science.gov (United States)

    Choi, Sang; King, Glen; Park, Yeonjoon

    2009-01-01

    SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

  3. Integrated criteria document Zinc

    NARCIS (Netherlands)

    Cleven RFMJ; Janus JA; Annema JA; Slooff W

    1993-01-01

    This report contains information on zinc and zinc compounds concerning standards, emissions, exposure levels and effect levels. It includes a risk evaluation and presents proposals for maximum permissible concentrations of zinc in the environment. This study indicates that the concentration of zinc

  4. Update on zinc biology.

    Science.gov (United States)

    Solomons, Noel W

    2013-01-01

    Zinc has become a prominent nutrient of clinical and public health interest in the new millennium. Functions and actions for zinc emerge as increasingly ubiquitous in mammalian anatomy, physiology and metabolism. There is undoubtedly an underpinning in fundamental biology for all of the aspects of zinc in human health (clinical and epidemiological) in pediatric and public health practice. Unfortunately, basic science research may not have achieved a full understanding as yet. As a complement to the applied themes in the companion articles, a selection of recent advances in the domains homeostatic regulation and transport of zinc is presented; they are integrated, in turn, with findings on genetic expression, intracellular signaling, immunity and host defense, and bone growth. The elements include ionic zinc, zinc transporters, metallothioneins, zinc metalloenzymes and zinc finger proteins. In emerging basic research, we find some plausible mechanistic explanations for delayed linear growth with zinc deficiency and increased infectious disease resistance with zinc supplementation. Copyright © 2013 S. Karger AG, Basel.

  5. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  6. Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide

    NARCIS (Netherlands)

    Crunteanu, A.; Jänchen, G.; Salathé, R.P.; Hoffmann, P.; Pollnau, M.; Eason, R.W.; Shepherd, D.P.

    2002-01-01

    We were successful in creating 1.4-µm high ribs in a Ti:sapphire planar waveguide by reactive ion etching. Optical investigations of the obtained structure showed channel-waveguide fluorescence emission of the Ti:sapphire layer after Ar-ion excitation.

  7. Fiber-laser-pumped Ti:sapphire laser

    CERN Document Server

    Samanta, G K; Devi, Kavita; Ebrahim-Zadeh, M

    2010-01-01

    We report the first experimental demonstration of efficient and high-power operation of a Ti:sapphire laser pumped by a simple, compact, continuous-wave (cw) fiber-laser-based green source. The pump radiation is obtained by direct single-pass second-harmonic-generation (SHG) of a 33-W, cw Yb-fiber laser in 30-mm-long MgO:sPPLT crystal, providing 11 W of single-frequency green power at 532 nm in TEM00 spatial profile with power and frequency stability better than 3.3% and 32 MHz, respectively, over one hour. The Ti:sapphire laser is continuously tunable across 743-970 nm and can deliver an output power up to 2.7 W with a slope efficiency as high as 32.8% under optimum output coupling of 20%. The laser output has a TEM00 spatial profile with M2<1.44 across the tuning range and exhibits a peak-to-peak power fluctuation below 5.1% over 1 hour.

  8. Temperature behavior of damage in sapphire implanted with light ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal)], E-mail: ealves@itn.pt; Marques, C. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal); Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, Carl J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10{sup 16}-1 x 10{sup 17} cm{sup -2}) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 deg. C and 1000 deg. C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10{sup 17} cm{sup -2}. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 deg. C and 1000 deg. C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  9. The effect of crystal orientation on the cryogenic strength of hydroxide catalysis bonded sapphire

    Science.gov (United States)

    Haughian, K.; Douglas, R.; van Veggel, A. A.; Hough, J.; Khalaidovski, A.; Rowan, S.; Suzuki, T.; Yamamoto, K.

    2015-04-01

    Hydroxide catalysis bonding has been used in gravitational wave detectors to precisely and securely join components of quasi-monolithic silica suspensions. Plans to operate future detectors at cryogenic temperatures has created the need for a change in the test mass and suspension material. Mono-crystalline sapphire is one candidate material for use at cryogenic temperatures and is being investigated for use in the KAGRA detector. The crystalline structure of sapphire may influence the properties of the hydroxide catalysis bond formed. Here, results are presented of studies of the potential influence of the crystal orientation of sapphire on the shear strength of the hydroxide catalysis bonds formed between sapphire samples. The strength was tested at approximately 8 K; this is the first measurement of the strength of such bonds between sapphire at such reduced temperatures. Our results suggest that all orientation combinations investigated produce bonds of sufficient strength for use in typical mirror suspension designs, with average strengths >23 MPa.

  10. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  11. A convenient and stereoselective synthesis of (Z)-allyl selenides via Sm/TMSCI system-promoted coupling of Baylis-Hillman adducts with diselenides

    Institute of Scientific and Technical Information of China (English)

    LIU Yun-kui; XU Dan-qian; XU Zhen-yuan; ZHANG Yong-min

    2006-01-01

    A simple and convenient procedure for stereoselective synthesis of (Z)-allyl selenides has been developed by a one-pot reaction of diselenides with Baylis-Hillman adducts in the presence of samarium metal-trimethylsilyl chloride under mild conditions. Presumably, the diselenides are cleaved by Sm/TMSCl system to form selenide anions, which then undergo SN2' substitution of Baylis-Hillman adducts to produce the (Z)-allyl selenides.

  12. Method of capturing or trapping zinc using zinc getter materials

    Energy Technology Data Exchange (ETDEWEB)

    Hunyadi Murph, Simona E.; Korinko, Paul S.

    2017-07-11

    A method of trapping or capturing zinc is disclosed. In particular, the method comprises a step of contacting a zinc vapor with a zinc getter material. The zinc getter material comprises nanoparticles and a metal substrate.

  13. Zinc: the neglected nutrient.

    Science.gov (United States)

    Shambaugh, G E

    1989-03-01

    Zinc was first recognized as essential for animals at the University of Illinois School of Agriculture in 1916, when it was found that zinc-deficient baby pigs were runty, developed dermatitis on their legs, and were sterile. Zinc deficiency was first recognized in man by Dr. Ananda Prasad of Detroit 26 years ago when he measured serum and hair zinc levels in young male Egyptian dwarfs who had failed to mature and were small in stature. By simply adding zinc to their regular diet, they grew in height and became sexually mature. It is now recognized that dwarfism in males is frequent around the Mediterranean, where wheat is the staple of life and has been grown for 4,000 years on the same soil, thereby resulting in the depletion of zinc. Professor Robert Henkin first suggested that zinc deficiency might cause hearing-nerve impairment. Assay of the soft tissues of the cochlea and vestibule revealed a zinc level higher than that of any other part of the body. Previously, the eye was considered to have the highest level of zinc of any organ. To diagnose zinc deficiency clinically, we use serum zinc assays made at the Mayo Clinic Trace Element Laboratory. With zinc supplementation in patients who are marginally zinc deficient, there has been improvement in tinnitus and sensorineural hearing loss in about one-third of elderly adults. We believe zinc deficiency is one causation of presbycusis; by recognizing and correcting it, a progressive hearing loss can be arrested.

  14. High-temperature sapphire optical sensor fiber coatings

    Science.gov (United States)

    Desu, Seshu B.; Claus, Richard O.; Raheem, Ruby; Murphy, Kent A.

    1990-10-01

    the filter. These modes may be attributed to a number of material degradation mechanisms, such as thermal shock, oxidation corrosion of the material, mechanical loads, or phase changes in the filter material. Development of high temperature optical fiber (sapphire) sensors embedded in the CXF filters would be very valuable for both monitoring the integrity of the filter during its use and understanding the mechanisms of degradation such that durable filter development will be facilitated. Since the filter operating environment is very harsh, the high temperature sapphire optical fibers need to be protected and for some sensing techniques the fiber must also be coated with low refractive index film (cladding). The objective of the present study is to identify materials and develop process technologies for the application of claddings and protective coatings that are stable and compatible with sapphire fibers at both high temperatures and pressures.

  15. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Science.gov (United States)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  16. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambade, Swapnil B. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Mane, R.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Kale, S.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Sonawane, S.H. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Shaikh, Arif V. [Department of Electronic Science, AKI' s Poona College of Arts, Science and Commerce, Camp, Pune 411 001 (India); Han, Sung-Hwan [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of)]. E-mail: shhan@hanyang.ac.kr

    2006-12-15

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 deg. C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu{sub 2-x}Se phase was confirmed by XRD pattern and spherical grains of 30 {+-} 4 - 40 {+-} 4 nm in size aggregated over about 130 {+-} 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm{sup 2} light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  17. Basic electronic properties of iron selenide under variation of structural parameters

    Science.gov (United States)

    Guterding, Daniel; Jeschke, Harald O.; Valentí, Roser

    2017-09-01

    Since the discovery of high-temperature superconductivity in the thin-film FeSe /SrTiO3 system, iron selenide and its derivates have been intensively scrutinized. Using ab initio density functional theory calculations we review the electronic structures that could be realized in iron selenide if the structural parameters could be tuned at liberty. We calculate the momentum dependence of the susceptibility and investigate the symmetry of electron pairing within the random phase approximation. Both the susceptibility and the symmetry of electron pairing depend on the structural parameters in a nontrivial way. These results are consistent with the known experimental behavior of binary iron chalcogenides and, at the same time, reveal two promising ways of tuning superconducting transition temperatures in these materials: on one hand by expanding the iron lattice of FeSe at constant iron-selenium distance and, on the other hand, by increasing the iron-selenium distance with unchanged iron lattice.

  18. Metal ions to control the morphology of semiconductor nanoparticles: copper selenide nanocubes.

    Science.gov (United States)

    Li, Wenhua; Zamani, Reza; Ibáñez, Maria; Cadavid, Doris; Shavel, Alexey; Morante, Joan Ramon; Arbiol, Jordi; Cabot, Andreu

    2013-03-27

    Morphology is a key parameter in the design of novel nanocrystals and nanomaterials with controlled functional properties. Here, we demonstrate the potential of foreign metal ions to tune the morphology of colloidal semiconductor nanoparticles. We illustrate the underlying mechanism by preparing copper selenide nanocubes in the presence of Al ions. We further characterize the plasmonic properties of the obtained nanocrystals and demonstrate their potential as a platform to produce cubic nanoparticles with different composition by cation exchange.

  19. Realization of ultrathin Copper Indium Gallium Di-selenide (CIGSe) solar cells

    OpenAIRE

    Jehl, Zacharie

    2012-01-01

    In this thesis, we investigate on the possibility to realize ultrathin absorber Copper Indium Gallium Di-Selenide (CIGSe) solar cells, by reducing the CIGSe thickness from 2500 nm down to 100 nm, while conserving a high conversion efficiency.Using numerical modeling, we first study the evolution of the photovoltaic parameters when reducing the absorber thickness. A strong decrease of the efficiency of the solar cell is observed, mainly related to a reduced light absorption and carrier collect...

  20. Cytocompatibility of direct water synthesized cadmium selenide quantum dots in colo-205 cells

    OpenAIRE

    Rodriguez-Torres, Marcos R.; Velez, Christian; Zayas, Beatriz; Rivera, Osvaldo; Arslan, Zikri; Gonzalez-Vega, Maxine N.; Diaz-Diestra, Daysi; Beltran-Huarac, Juan; Morell, Gerardo; Primera-Pedrozo, Oliva M.

    2015-01-01

    Cadmium selenide quantum dots (CdSe QDs), inorganic semiconducting nanocrystals, are alluring increased attraction due to their highly refined chemistry, availability, and super tunable optical properties suitable for many applications in different research areas, such as photovoltaics, light-emitting devices, environmental sciences, and nanomedicine. Specifically, they are being widely used in bio-imaging in contrast to organic dyes due to their high brightness and improved photo-stability, ...

  1. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    Science.gov (United States)

    Nair, M. T. S.; Nair, Padmanabhan K.; Garcia, Victor M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  2. Room Temperature Experiments with a Macroscopic Sapphire Mechanical Oscillator

    Science.gov (United States)

    Bourhill, Jeremy; Ivanov, Eugene; Tobar, Micahel

    2015-03-01

    We present initial results from a number of experiments conducted on a 0.53 kg sapphire ``dumbbell'' crystal. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects frequency modulate resonant microwave whispering gallery modes, simultaneously excited within the crystal. A novel microwave readout system is described allowing extremely low noise measurements of this frequency modulation with a phase noise floor of -160 dBc/Hz at 100 kHz, near our modes of interest. Fine-tuning of the crystal's suspension have allowed for the optimisation of mechanical Q-factors in preparation for cryogenic experiments, with a value of 8 x 107 achieved so far. Finally, results are presented that demonstrate the excitation of mechanical modes via radiation pressure force. These are all important steps towards the overall goal of the experiment; to cool a macroscopic device to the quantum ground state.

  3. Superexciplex of Coumarin Molecules using Tunable Ti-Sapphire Laser

    Science.gov (United States)

    Al-Ghamdi, Attieh Ali; Al-Dwayyan, Abdullah S.; Masilamani, Vadivel; Al-Saud, Turki Saud M.; Al-Salhi, Mohammed Saleh

    2003-10-01

    Certain highly polar dye molecules exhibit an additional optical gain band under pulsed laser excitation, while there is no such band under steady-state continuous wave (CW) lamp excitation. This new band is not due to an excimer, an exciplex or a two-photon fluorescence band but stems from the formation of a new molecular complex in which two excited molecules remain associated with a solvent molecule acting as a bridge. In this paper, the characteristics of superexciplexes of four related coumarin molecules are presented. All molecules were excited using a tunable Ti-sapphire laser pulse 10 ns in width. The distinct difference between the amplified spontaneous emission (ASE) spectra obtained with tunable laser and tunable lamp excitation demonstrated that twisted intramolecular charge transfer (TICT) conformations might also assist in the formation of these superexciplexes.

  4. The charge state of iron implanted into sapphire

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.; Sklad, P.S.; White, C.W.; Farlow, G.C.; Perez, A.; Kornilios, N.; Marest, G.

    1987-08-01

    Several techniques (RBS, TEM, CEMS) have been used to characterize sapphire single crystals implanted with iron at room temperature to fluences of 10/sup 16/ to 10/sup 17/ ions cm/sup -2/. At low fluences the as-implanted iron is found mainly in the ferrous state. As the fluence is increased, Fe/sup 3 +/ and metallic iron clusters became dominant. There is a strong correlation between the probability of finding specific configurations of iron ions within four cation coordination shells and the relative amounts of each charge state observed. The superparamagnetic behavior of the clusters suggest that they are of the order of 2 nm in size but the large amount of irradiation-induced damage and residual stress has prevented their imaging by TEM. 13 refs., 7 figs.

  5. Numerical computation of sapphire crystal growth using heat exchanger method

    Science.gov (United States)

    Lu, Chung-Wei; Chen, Jyh-Chen

    2001-05-01

    The finite element software FIDAP is employed to study the temperature and velocity distribution and the interface shape during a large sapphire crystal growth process using a heat exchanger method (HEM). In the present study, the energy input to the crucible by the radiation and convection inside the furnace and the energy output through the heat exchanger is modeled by the convection boundary conditions. The effects of the various growth parameters are studied. It is found that the contact angle is obtuse before the solid-melt interface touches the sidewall of the crucible. Therefore, hot spots always appear in this process. The maximum convexity decreases significantly when the cooling-zone radius (RC) increases. The maximum convexity also decreases significantly as the combined convection coefficient inside the furnace (hI) decreases.

  6. Adapting a Cryogenic Sapphire Oscillator for Very Long Baseline Interferometry

    CERN Document Server

    Doeleman, Sheperd; Rogers, Alan; Hartnett, John; Tobar, Michael; Nand, Nitin; 10.1086/660156

    2011-01-01

    Extension of very long baseline interferometry (VLBI) to observing wavelengths shorter than 1.3mm provides exceptional angular resolution (~20 micro arcsec) and access to new spectral regimes for the study of astrophysical phenomena. To maintain phase coherence across a global VLBI array at these wavelengths requires that ultrastable frequency references be used for the heterodyne receivers at all participating telescopes. Hydrogen masers have traditionally been used as VLBI references, but atmospheric turbulence typically limits (sub) millimeter VLBI coherence times to ~1-30 s. Cryogenic Sapphire Oscillators (CSO) have better stability than Hydrogen masers on these time scale and are potential alternatives to masers as VLBI references. Here, We describe the design, implementation and tests of a system to produce a 10 MHz VLBI frequency standard from the microwave (11.2 GHz) output of a CSO. To improve long-term stability of the new reference, the CSO was locked to the timing signal from the Global Positionin...

  7. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  8. Copper and silver selenide crystal growth rate measurements as a method for determination of ionic conductivity

    Science.gov (United States)

    Vučić, Zlatko; Lovrić, Davorin; Gladić, Jadranko; Etlinger, Božidar

    2004-03-01

    The motivation behind this work is the discrepancy between the measured and calculated growth rates of copper selenide spherical single crystals between 740 and 800 K. The growth of cylindrical polycrystalline samples of copper selenide at high temperatures was monitored in experiments that enabled full control of the geometry of growth. Together with the calculations based on Yokota's transport equation, these measurements eliminated ionic conductivity data as a possible reason behind too high values of the calculated growth rates. The equivalent growth experiments on polycrystalline silver selenide samples were performed as a test of the method, yielding excellent agreement with the results obtained by extrapolation of existing data. On the basis of these measurements and associated analysis, this method is proposed as a method for determination of ionic conductivity of mixed superionic conductors on temperatures up to the temperatures of melting, i.e. in the range in which other methods of ionic conductivity measurements either do not work or are not accurate enough.

  9. Copper selenide nanowires and nanocrystallites in alumina: Carrier relaxation, recombination, and trapping

    Science.gov (United States)

    Statkutė, G.; Tomašiùnas, R.; Jagminas, A.

    2007-06-01

    Nonequilibrium carrier dynamics in copper selenide (Cu2-δSe δ=0.15, Cu3Se2) nanowires (diameter ≈18 nm, height ≈2 μm) and nanocrystallites (diameter≈18 nm) in femto- and picosecond time domains by the means of a transient dynamic grating technique were investigated. Bulk and quantum confinement approaches were used to fit the experimental results using nonequilibrium carrier fast relaxation, recombination, and trapping mechanisms. A nonradiative Auger recombination was concluded to be the main mechanism of nonequilibrium carrier recombination. The Auger coefficient for copper selenide was estimated of the order of 10-30-10-29 cm6 s-1. Hole trapping at shallow impurity centers in nanowires was interpreted. From calculating the experimental results the trapping parameters and high concentration of centers >1020 cm-3 were evaluated. Finally, direct measurement of carrier lifetime in copper selenide nanostructures showed values of the order of ≈10-10 s. Samples were characterized by the means of transmission electron microscopy, scanning electron microscopy, x-ray diffraction, and optical spectroscopy.

  10. Determination of dimethyl selenide and dimethyl sulphide compounds causing off-flavours in bottled mineral waters.

    Science.gov (United States)

    Guadayol, Marta; Cortina, Montserrat; Guadayol, Josep M; Caixach, Josep

    2016-04-01

    Sales of bottled drinking water have shown a large growth during the last two decades due to the general belief that this kind of water is healthier, its flavour is better and its consumption risk is lower than that of tap water. Due to the previous points, consumers are more demanding with bottled mineral water, especially when dealing with its organoleptic properties, like taste and odour. This work studies the compounds that can generate obnoxious smells, and that consumers have described like swampy, rotten eggs, sulphurous, cooked vegetable or cabbage. Closed loop stripping analysis (CLSA) has been used as a pre-concentration method for the analysis of off-flavour compounds in water followed by identification and quantification by means of GC-MS. Several bottled water with the aforementioned smells showed the presence of volatile dimethyl selenides and dimethyl sulphides, whose concentrations ranged, respectively, from 4 to 20 ng/L and from 1 to 63 ng/L. The low odour threshold concentrations (OTCs) of both organic selenide and sulphide derivatives prove that several objectionable odours in bottled waters arise from them. Microbial loads inherent to water sources, along with some critical conditions in water processing, could contribute to the formation of these compounds. There are few studies about volatile organic compounds in bottled drinking water and, at the best of our knowledge, this is the first study reporting the presence of dimethyl selenides and dimethyl sulphides causing odour problems in bottled waters.

  11. Zinc oxide overdose

    Science.gov (United States)

    Zinc oxide is an ingredient in many products. Some of these are certain creams and ointments used ... prevent or treat minor skin burns and irritation. Zinc oxide overdose occurs when someone eats one of ...

  12. Large-scale inhomogeneity in sapphire test masses revealed by Rayleigh scattering imaging

    Science.gov (United States)

    Yan, Zewu; Ju, Li; Eon, François; Gras, Slawomir; Zhao, Chunnong; Jacob, John; Blair, David G.

    2004-03-01

    Rayleigh scattering in test masses can introduce noise and reduce the sensitivity of laser interferometric gravitational wave detectors. In this paper, we present laser Rayleigh scattering imaging as a technique to investigate sapphire test masses. The system provides three-dimensional Rayleigh scattering mapping of entire test masses and quantitative evaluation of the Rayleigh scattering coefficient. Rayleigh scattering mapping of two sapphire samples reveals point defects as well as inhomogeneous structures in the samples. We present results showing significant non-uniform scattering within two 4.5 kg sapphire test masses manufactured by the heat exchanger method.

  13. Cadmium and zinc relationships

    Energy Technology Data Exchange (ETDEWEB)

    Elinder, C.; Piscator, M.

    1978-08-01

    Higher mammals, such as homo sapiens, accumulate zinc in kidney cortex almost equimolarly with cadmium. A different pattern seems to be present in liverthere is a limited increase of zinc in two species of large farm animals compared with a marked increase in the laboratory. In large farm animals, an equimolar increase of zinc with cadmium in renal cortex seems to indicate that the form of metallothionein that binds equal amounts of cadmium and zinc in present. Differences in cadmium and zinc relationships in large animals and humans compared with laboratory animals must be carefully considered. (4 graphs, 26 references)

  14. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser....... However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy....

  15. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  17. Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In this paper, large-sized sapphire (Φ230×210 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching, scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101~8.0×102 cm-2, in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally, the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.

  18. Advances in Trace Element "Fingerprinting" of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    National Research Council Canada - National Science Library

    F Lin Sutherland; Khin Zaw; Sebastien Meffre; Tzen-Fui Yui; Kyaw Thu

    2015-01-01

    ... corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents...

  19. Zinc and skin biology.

    Science.gov (United States)

    Ogawa, Youichi; Kawamura, Tatsuyoshi; Shimada, Shinji

    2016-12-01

    Of all tissues, the skin has the third highest abundance of zinc in the body. In the skin, the zinc concentration is higher in the epidermis than in the dermis, owing to a zinc requirement for the active proliferation and differentiation of epidermal keratinocytes. Here we review the dynamics and functions of zinc in the skin as well as skin disorders associated with zinc deficiency, zinc finger domain-containing proteins, and zinc transporters. Among skin disorders associated with zinc deficiency, acrodermatitis enteropathica is a disorder caused by mutations in the ZIP4 transporter and subsequent zinc deficiency. The triad acrodermatitis enteropathica is characterized by alopecia, diarrhea, and skin lesions in acral, periorificial, and anogenital areas. We highlight the underlying mechanism of the development of acrodermatitis because of zinc deficiency by describing our new findings. We also discuss the accumulating evidence on zinc deficiency in alopecia and necrolytic migratory erythema, which is typically associated with glucagonomas. Copyright © 2016 Elsevier Inc. All rights reserved.

  20. Cadmium and zinc relationships.

    Science.gov (United States)

    Elinder, C G; Piscator, M

    1978-08-01

    Cadmium and zinc concentrations in kidney and liver have been measured under different exposure situations in different species including man. The results show that zinc increases almost equimolarly with cadmium in kidney after long-term low-level exposure to cadmium, e.g., in man, horse, pig, and lamb. In contrast, the increase of zinc follows that of cadmium to only a limited extent, e.g., in guinea pig, rabbit, rat, mouse, and chicks. In liver, the cadmium--zinc relationship seems to be reversed in such a way that zinc increases with cadmium more markedly in laboratory animals than in higher mammals. These differences between cadmium and zinc relationships in humans and large farm animals and those in commonly used laboratory animals must be considered carefully before experimental data on cadmium and zinc relationships in laboratory animals can be extrapolated to humans.

  1. Newly designed multilayer thin film mirror for dispersion compensation in Ti: sapphire femtosecond lasers

    Institute of Scientific and Technical Information of China (English)

    Chunyan Liao; Jianda Shao; Jianbing Huang; Zhengxiu Fan; Hongbo He

    2005-01-01

    @@ There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

  2. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  3. Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis

    Science.gov (United States)

    Bletskan, D. I.; Bratus', V. Ya.; Luk'yanchuk, A. R.; Maslyuk, V. T.; Parlag, O. A.

    2008-07-01

    Sapphire (α-Al2O3) single crystals grown using the Verneuil and Kyropoulos methods have been analyzed using electron paramagnetic resonance and γ-ray spectroscopy with 12-MeV bremsstrahlung excitation. It is established that uncontrolled impurities in the final sapphire single crystals grown by the Kyropoulos method in molybdenum-tungsten crucibles are supplied both from the initial materials and from the furnace and crucible materials

  4. Jones calculus modeling and analysis of the thermal distortion in a Ti:sapphire laser amplifier.

    Science.gov (United States)

    Cho, Seryeyohan; Jeong, Jihoon; Yu, Tae Jun

    2016-06-27

    The mathematical modeling of an anisotropic Ti:sapphire crystal with a significant thermal load is performed. The model is expressed by the differential Jones matrix. A thermally induced distortion in the chirped-pulse amplification process is shown by the solution of the differential Jones matrix. Using this model, the thermally distorted spatio-temporal laser beam shape is calculated for a high-power and high-repetition-rate Ti:sapphire amplifier.

  5. High power all-solid-state quasi-continuous-wave tunable Ti: sapphire laser system

    Institute of Scientific and Technical Information of China (English)

    Lei Zou; Xin Ding; Yue Zou; Hongmei Ma; Wuqi Wen; Peng Wang; Jianquan Yao

    2005-01-01

    This paper reports a high power, all-solid-state, quasi-continuous-wave tunable Ti:sapphire laser system pumped by laser diode (LD) pumped frequency-doubled Nd:YAG laser. The maximum tuned output power of 4.2 W (797 nm) and tuned average power of 3.7 W were achieved when fixing the Ti:sapphire broadband output power at 5.0 W and applying 750-850 nm broadband coated mirror.

  6. Aleutian disease of mink: the antibody response of sapphire and pastel mink to Aleutian disease virus.

    Science.gov (United States)

    Bloom, M E; Race, R E; Hadlow, W J; Chesebro, B

    1975-10-01

    The specific antiviral antibody response of sapphire and pastel mink to Pullman strain of ADV has been examined. Sapphire mink inoculated with from 300,000-3 LD50 developed high levels of specific antibody and AD. Pastel mink inoculated with parallel doses of ADV also produced antibody but did not develop AD. The low incidence of AD in pastel mink inoculated with Pullman strain of ADV is probably related to factors other than antiviral antibody.

  7. Interface defects in GaN/sapphire studied using Rutherford backscattering spectroscopy and channeling

    Indian Academy of Sciences (India)

    S K Sinha; P K Barhai

    2004-06-01

    GaN on sapphire was grown by MOCVD technique. Rutherford backscattering spectra together with channeling along [0 0 0 1] axis were recorded to study the defects at the interface. Detailed calculation shows that the defects at GaN/sapphire interface are due to dislocations which are distributed into the whole thickness of the film and are mainly aligned on the growth direction.

  8. Supersmooth and modified surface of sapphire crystals: Formation, characterization, and applications in nanotechnologies

    Science.gov (United States)

    Muslimov, A. E.; Asadchikov, V. E.; Butashin, A. V.; Vlasov, V. P.; Deryabin, A. N.; Roshchin, B. S.; Sulyanov, S. N.; Kanevsky, V. M.

    2016-09-01

    The results of studying the state of the surface of sapphire crystals by a complex of methods in different stages of crystal treatment are considered by an example of preparing sapphire substrates with a supersmooth surface. The possibility of purposefully forming regular micro- and nanoreliefs and thin transition layers using thermal and thermochemical impacts are considered. The advantages of sapphire substrates with a modified surface for forming heteroepitaxial CdTe and ZnO semiconductor films and ordered ensembles of gold nanoparticles are described. The results of the experiments on the application of crystalline sapphire as a material for X-ray optical elements are reported. These elements include total external reflection mirrors and substrates for multilayer mirrors, output windows for synchrotron radiation, and monochromators working in the reflection geometry in X-ray spectrometers. In the latter case, the problems of the defect structure of bulk crystals sapphire and the choice of a method for growing sapphire crystals of the highest structural quality are considered.

  9. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Joucken, Frédéric, E-mail: frederic.joucken@unamur.be; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-15

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10{sup 12} cm{sup −2}) together with quite low carrier mobility (∼1350 cm{sup 2}/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  10. Cellular and humoral antibody responses of normal pastel and sapphire mink to goat erythrocytes.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J; Munoz, J J

    1971-02-01

    This study was undertaken to determine whether normal sapphire and royal pastel mink differ immunologically at the cellular and humoral levels. Two days after primary intraperitoneal (ip) inoculation of goat erythrocytes (GE), essentially no 19 or 7S plaque-forming cells (PFC) per 10(6) cells were detected in spleen or in abdominal and peripheral lymph nodes of either color phase. On the 4th day, more 19S PFC were detected in pastel than in sapphire tissues; pastel tissues also contained 7S PFC, whereas essentially none was present in sapphires until the 6th day. After an ip booster inoculation, the number of PFC was markedly different between the two color phases. These differences were most apparent in spleen and peripheral lymph nodes. In parallel with differences observed in PFC responses between the color phases, total hemolysin and 2-mercaptoethanol-resistant hemolysin titers of pastels exceeded those of sapphires in all but one interval after the primary, and at every interval after the booster, inoculation. These data indicate that sapphire mink are not immunological cripples, nor are they immunologically hyperactive, but that differences do exist between sapphire and royal pastel mink, especially in the response to booster injections of GE.

  11. Sonochemical synthesis and mechanistic study of copper selenides Cu(2-x)Se, beta-CuSe, and Cu(3)Se(2).

    Science.gov (United States)

    Xie, Yi; Zheng, Xiuwen; Jiang, Xuchuan; Lu, Jun; Zhu, Liying

    2002-01-28

    Nanocrystallites of nonstoichiometric copper selenide (Cu(2-x)Se) and stoichiometric copper selenides (beta-CuSe and Cu(3)Se(2)) were synthesized in different solutions via sonochemical irradiation at room temperature. The influence of solvents, surfactants, and ultrasonic irradiation on the morphology and phase of products has been investigated. The morphological difference of the products was mainly affected by the solvents and surfactants, which can self-aggregate into lamellar structures or microemulsions, and then these unique structures can act as both supramolecular template and microreactor to direct the growth of copper selenides. On the other hand, it was also found that the sonochemical irradiation and solvents played an important role in the formation of different phases of copper selenides. The proposed formation mechanism of copper selenides is discussed.

  12. [Zinc and type 2 diabetes].

    Science.gov (United States)

    Fukunaka, Ayako; Fujitani, Yoshio

    2016-07-01

    Pancreatic β cells contain the highest amount of zinc among cells within the human body, and hence, the relationship between zinc and diabetes has been a topic of great interest. While many studies demonstrating possible involvement of zinc deficiency in diabetes have been reported, precise mechanisms how zinc regulates glucose metabolism are still far from understood. Recent studies revealed that zinc can transmit signals that are driven by a variety of zinc transporters in a tissue and cell-type specific manner and deficiency in some zinc transporters may cause human diseases. Here, we review the role of zinc in metabolism particularly focusing on the emerging role of zinc transporters in diabetes.

  13. Laser surface and subsurface modification of sapphire using femtosecond pulses

    Energy Technology Data Exchange (ETDEWEB)

    Eberle, G., E-mail: eberle@iwf.mavt.ethz.ch [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Schmidt, M. [Chair of Photonic Technologies, University of Erlangen-Nuremberg, Konrad-Zuse-Strasse 3-5, 91052 Erlangen (Germany); Pude, F. [Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland); Wegener, K. [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland)

    2016-08-15

    Highlights: • Single and multipulse ablation threshold of aluminium oxide is determined. • Laser ablation, and in-volume modification followed by wet etching are demonstrated. • Quality following laser processing and laser-material interactions are studied. - Abstract: Two methods to process sapphire using femtosecond laser pulses are demonstrated, namely ablation (surface), and in-volume laser modification followed by wet etching (subsurface). Firstly, the single and multipulse ablation threshold is determined and compared with previous literature results. A unique application of ablation is demonstrated by modifying the entrance aperture of water jet orifices. Laser ablation exhibits advantages in terms of geometric flexibility and resolution, however, defects in the form of edge outbreaks and poor surface quality are evident. Secondly, the role of material transformation, polarisation state and formation of multi-focus structures after in-volume laser modification is investigated in order to explain their influence during the wet etching process. Laser scanning and electron microscopy as well as electron backscatter diffraction measurements supported by ion beam polishing are used to better understand quality and laser-material interactions of the two demonstrated methods of processing.

  14. Local dielectric permittivity profiles of sapphire/polypropylene interfaces

    Science.gov (United States)

    Yu, Liping; Ranjan, V.; Buongiorno Nardelli, M.; Bernholc, J.

    2009-03-01

    Recently, the need for high-power-density capacitors has stimulated research to develop composite dielectric materials with high-k nanoparticles embedded in a polymer matrix. In these materials, surfaces and interfaces may play an important role in determining the overall dielectric properties. We present first-principles investigations of the dielectric permittivity profiles across slabs and interfaces of sapphire(α-Al2O3)/isotactic-polypropylene(iPP). Our results indicate that the permittivity profile at interface strongly depends on the nanoscale averaging procedure. We propose an averaging model that ensures near-locality of the dielectric function. We find that: (i) the dielectric permittivity approaches the corresponding bulk value just a few atomic layers away from the interface or surface; (ii) the dielectric constant is enhanced at the surfaces of the isolated α-Al2O3 slabs, while no enhancement is observed at the iPP slab surfaces; and (iii) the dielectric transition at the αAl2O3/iPP is mainly confined in the αAl2O3 side.

  15. Q-Switching the Flash Ti: Sapphire Laser

    Energy Technology Data Exchange (ETDEWEB)

    Cone, Kelly

    2003-09-05

    The Stanford Linear Accelerator Center (SLAC) uses a flash lamp pumped Ti:Sapphire laser to generate the electron beam inside of the Linac. This laser system was installed at the SLAC Polarized Light Source in 1993. During the past, the system has been upgraded in several steps (eg. installation of Rhodium coated reflectors, cavity redesign, and remote controlled wavelength tunability). Q-switching the laser cavity to increase the peak pulse energy was successfully investigated and further improves the capabilities of the laser system for future polarized beam experiments. Two Pockels cells were used to perform the Q-switch and various diagnostics were used to characterize the modified laser pulse. The timing in relation to the laser trigger, pulse width, and pulse shape applied to the Q-switching Pockels cells (PC) were optimized. No damage to the laser cavity or optical elements occurred. At optimal conditions of Q-switching, the pulse energy of the laser increased from 0.4 mJ to over 3 mJ in a 300 ns pulse. The Q-switched pulse energy can be further increased by extending the hold-off pulse applied to the PC. The laser pulse produced by the Q-switch was long enough (full width half maximum (FWHM) > 200 ns) for pulse shaping and demonstrated good intensity stability (< 0.5% jitter). The increase in output power suggests that Q-switching will be used for future accelerator projects.

  16. A study on the connection and physical properties of Cadmium selenide nanoparticles and zinc sulfide nanoparticles made by ultrasonic method

    Directory of Open Access Journals (Sweden)

    Shabnam Taheriniya

    2016-04-01

    Full Text Available Ultrasonic waves are called to hordes of mechanical waves that their oscillation frequency exceeds from human hearing range (20 Hz- 20 KHz. These waves have various applications due to their properties; ultrasonic frequency acoustic waves (16 KHz to 2 MHz are used for curing and ultrasonic process parameters (amplitude, frequency and power can be controlled properly. Ultrasonic process in fluids is followed by acoustic cavitation phenomenon (cavitation. Indeed, acoustic cavitation refers to the formation of bubbles (pores due to the rapid drop in water caused by passing the sound waves through it. In this research, an action was made to produce CdSe and ZnS nanoparticles using this method. Ultimately, ZnS quantum dots and ZnS nanoparticles were connected to each other using a coupling agent copolymer (PEG-PCA. The optical properties of this nanoparticle were examined by using X-ray diffraction and evaluated using UV-Visblel range of coupling effect.

  17. Preparation, theory, and biological applications of highly luminescent cadmium selenide/zinc sulfide quantum dots in optical and electron microscopy

    Science.gov (United States)

    Bouwer, James Christopher

    This dissertation describes the preparation, theory, and applications of ZnS overcoated CdSe (core) quantum dots for applications as fluorescent probes in optical microscopy and as electron energy loss spectroscopy (EELS) probes in electron microscopy, with applications to the biological sciences. The dissertation begins with a brief overview of quantum dots and their history. Next, a brief overview of the necessary semiconductor theory is discussed including the origin of the band gap, the origin of holes, the concepts of phonons, and trap states. Then, the role of the confinement potential in the quantum dot fluorescent spectrum is discussed in the context of the 3-dimensional spherical well. Included in this discussion is the role of excitonic electron-hole bound states. To provide a complete document useful to anyone who wishes to continue work along these lines, included is a methods section which describes the complete process of synthesis of the CdSe cores, overcoating the cores with ZnS, size selection of nanocrystals, water solubilization, and protein conjugation. The methods used in live cell labeling are included as well. In the section that follows, a discussion of the mathematical methods of image correlation spectroscopy (ICS) for extracting dynamic constants such as flow rates and diffusion constants from time lapse optical image data is discussed in the context of quantum dot fluorescent probes. Dynamic constants were obtained using live NIH3T3 mouse fibroblast cells labeled with IgG-anti-EGF conjugated quantum dots. These same cells were then fixed, imbedded in resin, sectioned to 100nm thick sections and imaged under the electron microscope. The electron dense cadmium selinide provides the contrast necessary to perform direct imaging of EGF receptor sites. In order to improve the data and move toward multi-channel imaging in the electron microscope, EELS spectroscopy and elemental mapping of quantum dots was performed. The theory along with a discussion of the instruments needed to perform EELS is presented. This data was intended to provide new applications of quantum dots as biological probes in EELS spectroscopy. This dissertation should provide the reader with a thorough understanding of the nature of quantum dots and give a number of biological applications.

  18. Ultraviolet/ultrasound-activated persulfate for degradation of drug by zinc selenide quantum dots: Catalysis and microbiology study.

    Science.gov (United States)

    Fakhri, Ali; Naji, Mahsa; Tahami, Shiva

    2017-05-01

    In this study, wet chemical method used for ZnSe quantum dots (QDs) and characterized by, UV-vis, photoluminescence spectroscopy, X-ray diffraction and transmission electron microscopy. The crystallites size of ZnSe QDs was 4.0nm. The average diameters of ZnSe QDs were 3.0-5.3nm. Ritalin was degraded using the UV/ZnSe QDs/persulfate process. The several parameters investigated for the influence of Rtialin degradation were the temperature, the persulfate concentration, and the initial Ritalin concentration. The values of optimum parameters ware room temperature, concentration persulfate 5mmol/L and initial Ritalin concentration 0.09mmol/L. Comparative analyses showed the maximum degradation of Ritalin was found for ZnSe/persulfate under ultra-visible and ultra-sonic irradiation process. Comparative analysis showed the maximum degradation of Ritalin was found for ZnSe/persulfate under ultra-visible and ultra-sonic irradiation process. The values of first-order rate constants from degradation of Ritalin at 25°C were 0.96×10(-2), 1.09×10(-2), 1.59×10(-2) and 2.19×10(-2) for US/PS, UV/PS, ZnSe/US/PS and ZnSe/UV/PS system, respectively. The antibacterial activity evaluation against two bacterials, including Gram-positive bacteria Staphylococcus aureus (ATCC 43300), Bacillus megaterium (ATCC 14581) and Gram-negative bacteria Pseudomonas aeruginosa (ATCC 27853), Micrococcus luteus (ATCC 4698) was considered. It was found that the MIC values for the antibacterial assay in the presence of ZnSe QDs were around 0.30mM with 64.0, 66.0, 79.2, and 83.5% inhibition for the S. aureus, B. megaterium, P. aeruginosa and M. luteus bacterial strains, respectively. Then, results show that the ZnSe QDs have antibacterial activity. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Effect of a thin intermediate zinc selenide layer on the properties of CuInSe sub 2 solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, J.B.; Fahrenbruch, A.L.; Bube, R.H. (Stanford Univ., CA (USA). Dept. of Materials Science and Engineering)

    1991-03-01

    We have demonstrated that a thin insulating layer of ZnSe can be a viable alternative to a thin layer of CdS in a CuInSe{sub 2} solar cell, as currently used in the high efficiency ARCO Solar (now Siemens Solar) ZnO/CdS/CuInSe{sub 2} cell. We have investigated the effects of ZnSe thickness and deposition temperature on the properties of CuInSe{sub 2} solar cells, using a CdS window layer for diagnostic purposes. An investigation of the junction transport mechanisms for these cells indicates that in the dark the transport is controlled by recombination in the depletion region at temperatures above room temperature and that multistep tunneling dominates at temperatures below room temperature. The fact that the open-circuit voltage is smaller under illumination that predicted from the dark junction parameters results primarily from a change in the junction transport mechanism upon illumination, associated with an increase in the density of charged acceptors in the CuInSe{sub 2}. (orig.).

  20. Computational studies of reacting flows with applications to zinc selenide nanoparticle synthesis and methane/hydrogen separation

    Science.gov (United States)

    Koutsona, Maria

    This work is a numerical study of the design and operation of two reacting flow systems, each with great potential in their fields. The design of reacting flow systems by computer simulations are successfully used in science and engineering to evaluate design geometries and operation, without resorting to experimental trial and error that is expensive, time consuming and, in some cases, dangerous. The models of the two systems described in this work are based on fundamental conservation equations for momentum and mass transfer coupled with chemical reaction kinetics and particle dynamics. The first part of this work is a study aiming to elucidate the transport phenomena and chemical reactions that control the size of ZnSe nanoparticles formed by a new vapor-phase synthesis route. The nanoparticles are synthesized by reacting vapors of (CH3)2Zn:N(C2H 5)3 adduct with H2Se gas (diluted in hydrogen) fed continuously from opposite sides into a counterflow jet reactor. The nuclei of the nanocrystals are formed by a direct condensation reaction near the stagnation point. The nuclei grow into nanoparticles by coalescence/coagulation and by surface growth reactions. A 2D model of an axially symmetric reactor was developed that includes descriptions of flow, mass transfer by convection and diffusion, chemical kinetics, particle nucleation, coagulation and surface growth. The coupled nonlinear partial differential equations of the model were solved using the Galerkin Finite Element Method. The model was used to study the relative importance of the underlying physical and chemical phenomena in controlling particle size and particle size distribution. Model predictions compared well with the limited experimental data available for this system. The model was also used for model-assisted design of the experimental counterflow jet reactor, where vapor-phase synthesis of ZnSe nanoparticles was demonstrated for the first time. The second part of this work involves the development of a predictive model describing pressure and concentration dynamics during Pressure Swing Adsorption (PSA) of binary (or pseudo-binary) gas mixtures. The separation of metane-hydrogen mixtures over 5A-zeolite was used as an example. The PSA cycle considered in this study includes the following 5 steps: (1) pressurization with product, (2) high-pressure adsorption, (3) cocurrent depressurization, (4) countercurrent blowdown and (5) countercurrent purge with product at low pressure. The PSA mathematical model describes the following processes gas flow in the bed (as axially dispersed plug flow) and the mass balance of the components of the mixture coupled to adsorption/desorption kinetics. The model results in a system of coupled partial differential equations in the axial bed dimension and time. The Galerkin Finite Element Method was used to discretize the equations in the axial direction of the bed. The resulting system of ordinary differential equations (ODE's) in time is solved by using an Euler full-implicit scheme. The model is being used by Chemical Design, Inc., for the initial design of PSA units.

  1. Origin of Difference in Photocatalytic Activity of ZnO (002 Grown on a- and c-Face Sapphire

    Directory of Open Access Journals (Sweden)

    Guoqiang Li

    2014-01-01

    Full Text Available The oriented (002 ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002 ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.

  2. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  3. Effect of He{sup +} irradiation on the optical properties of vacuum evaporated silver indium selenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Santhosh Kumar, M.C., E-mail: santhoshmc@yahoo.co [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620 015 (India); Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682 022 (India)

    2010-04-09

    We prepared polycrystalline silver indium selenide thin films by vacuum evaporation on glass substrate at a high temperature using the stoichiometric powder. The samples were subjected to the irradiation of 1.26 M eV He{sup +} ion. The effect of irradiation on the optical properties has been investigated for different fluencies of He{sup +}. The thin films were characterized by X-ray diffraction and UV-vis-NIR spectroscopy. It is observed that the band gap of silver indium selenide thin films decreases gradually from 1.17 to 0.82 eV with ion fluency.

  4. Improved zinc electrode and rechargeable zinc-air battery

    Science.gov (United States)

    Ross, P.N. Jr.

    1988-06-21

    The invention comprises an improved rechargeable zinc-air cell/battery having recirculating alkaline electrolyte and a zinc electrode comprising a porous foam support material which carries the active zinc electrode material. 5 figs.

  5. The NIFS protein can function as a selenide delivery protein in the biosynthesis of selenophosphate.

    Science.gov (United States)

    Lacourciere, G M; Stadtman, T C

    1998-11-20

    The NIFS protein from Azobacter vinelandii is a pyridoxal phosphate-containing homodimer that catalyzes the formation of equimolar amounts of elemental sulfur and L-alanine from the substrate L-cysteine (Zheng, L., White, R. H., Cash, V. L., Jack, R. F., and Dean, D. R. (1993) Proc. Natl. Acad. Sci. U. S. A. 90, 2754-2758). A sulfur transfer role of NIFS in which the enzyme donates sulfur for iron sulfur center formation in nitrogenase was suggested. The fact that NIFS also can catalyze the decomposition of L-selenocysteine to elemental selenium and L-alanine suggested the possibility that this enzyme might serve as a selenide delivery protein for the in vitro biosynthesis of selenophosphate. In agreement with this hypothesis, we have shown that replacement of selenide with NIFS and L-selenocysteine in the in vitro selenophosphate synthetase assay results in an increased rate of formation of selenophosphate. These results thus support the view that a selenocysteine-specific enzyme similar to NIFS may be involved as an in vivo selenide delivery protein for selenophosphate biosynthesis. A kinetic characterization of the two NIFS catalyzed reactions carried out in the present study indicates that the enzyme favors L-cysteine as a substrate compared with its selenium analog. A specific activity for L-cysteine of 142 nmol/min/mg compared with 55 nmol/min/mg for L-selenocysteine was determined. This level of enzyme activity on the selenoamino acid substrate is adequate to deliver selenium to selenophosphate synthetase in the in vitro assay system described.

  6. Shock Induced Emission from Sapphire in High-Pressure Phase of Rh2O3 (Ⅱ) Structure

    Institute of Scientific and Technical Information of China (English)

    ZHANG Dai-Yu; LIU Fu-Sheng; HAO Gao-Yu; SUN Yu-Huai

    2007-01-01

    @@ A distinct optical emission from the Rh2 O3 (Ⅱ) structural sapphire is observed under shock compression of 125,132, and 143 Gpa. The emission intensity continuously increases with the thickness of shocked sapphire. The colour temperature is determined to be about 4000K, which is obviously smaller than the reported value of the alpha phase alumina at the pressures below 80 Gpa. The present results suggest that the structural transformation will cause an obvious change of optical property in sapphire.

  7. Structural, morphology and electrical properties of layered copper selenide thin film

    Science.gov (United States)

    Ying Chyi Liew, J.; Talib, Zainal; Mahmood, W.; Yunus, M.; Zainal, Zulkarnain; Halim, Shaari; Moksin, Mohd; Yusoff, Wan; Pah Lim, K.

    2009-06-01

    Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

  8. Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

    Science.gov (United States)

    Andrade, E.; García, V. M.; Nair, P. K.; Nair, M. T. S.; Zavala, E. P.; Huerta, L.; Rocha, M. F.

    2000-03-01

    Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu xSe thin film to Cu 2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

  9. Copper Selenide Nanosnakes: Bovine Serum Albumin-Assisted Room Temperature Controllable Synthesis and Characterization

    OpenAIRE

    Huang Peng; Kong Yifei; Li Zhiming; Gao Feng; Cui Daxiang

    2010-01-01

    Abstract Herein we firstly reported a simple, environment-friendly, controllable synthetic method of CuSe nanosnakes at room temperature using copper salts and sodium selenosulfate as the reactants, and bovine serum albumin (BSA) as foaming agent. As the amounts of selenide ions (Se2−) released from Na2SeSO3 in the solution increased, the cubic and snake-like CuSe nanostructures were formed gradually, the cubic nanostructures were captured by the CuSe nanosnakes, the CuSe nanosnakes gre...

  10. Band structure and transport studies of copper selenide: An efficient thermoelectric material

    Science.gov (United States)

    Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Auluck, S.; Dhar, Ajay

    2014-10-01

    We report the band structure calculations for high temperature cubic phase of copper selenide (Cu2Se) employing Hartree-Fock approximation using density functional theory within the generalized gradient approximation. These calculations were further extended to theoretically estimate the electrical transport coefficients of Cu2Se employing Boltzmann transport theory, which show a reasonable agreement with the corresponding experimentally measured values. The calculated transport coefficients are discussed in terms of the thermoelectric (TE) performance of this material, which suggests that Cu2Se can be a potential p-type TE material with an optimum TE performance at a carrier concentration of ˜ 4 - 6 × 10 21 cm - 3 .

  11. Simultaneous phase and morphology controllable synthesis of copper selenide films by microwave-assisted nonaqueous approach

    Science.gov (United States)

    Li, Jing; Fa, Wenjun; Li, Yasi; Zhao, Hongxiao; Gao, Yuanhao; Zheng, Zhi

    2013-02-01

    Copper selenide films with different phase and morphology were synthesized on copper substrate through controlling reaction solvent by microwave-assisted nonaqueous approach. The films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The result showed that the pure films could be obtained using cyclohexyl alcohol or benzyl alcohol as solvent. The cubic Cu2-xSe dendrites were synthesized in cyclohexyl alcohol reaction system and hexagonal CuSe flaky crystals were obtained with benzyl alcohol as solvent.

  12. Enhanced performance of hybrid solar cells using longer arms of quantum cadmium selenide tetrapods

    KAUST Repository

    Lee, Kyu-Sung

    2011-12-01

    We demonstrate that enhanced device performance of hybrid solar cells based on tetrapod (TP)-shaped cadmium selenide (CdSe) nanoparticles and conjugated polymer of poly (3-hexylthiophene) (P3HT) can be obtained by using longer armed tetrapods which aids in better spatial connectivity, thus decreasing charge hopping events which lead to better charge transport. Longer tetrapods with 10 nm arm length lead to improved power conversion efficiency of 1.12% compared to 0.80% of device having 5 nm short-armed tetrapods:P3HT photoactive blends.

  13. Dissimilatory Reduction of Elemental Selenium to Selenide in Sediments and Anaerobic Cultures of Selenium Respiring Bacteria

    Science.gov (United States)

    Herbel, M. J.; Switzer-Blum, J.; Oremland, R. S.

    2001-12-01

    Selenium contaminated environments often contain elemental Se (Se0) in their sediments that originates from dissimilatory reduction of Se oxyanions. The forms of Se in sedimentary rocks similarly contain high proportions of Se0, but much of the Se is also in the form of metal selenides, Se-2. It is not clear if the occurrence of these selenides is due to microbial reduction of Se0, or some other biological or chemical process. In this investigation we examined the possibility that bacterial respiratory reduction of Se0 to Se-2 could explain the presence of the latter species in sedimentary rocks. We conducted incubations of anoxic sediment slurries amended with different forms of Se0. High levels of Se0 (mM) were added to San Francisco Bay sediments in order to enhance the detection of soluble HSe-, which was precipitated with Cu2+ then redissolved and quantified by ICP-MS. Concentrations of HSe- were highest in live samples amended with red amorphous Se0 formed by either microbial reduction of Se+4 ("biogenic Se0") or by chemical oxidation of H2Se(g) ("chem. Se0"); very little HSe- was formed in those amended with black crystalline Se0, indicating the general lack of reactivity of this allotrope. Controls poisoned with 10% formalin did not produce HSe- from additions of chem. Se0. Reduction of both forms of red amorphous Se0 to HSe- occurred vigorously in growing cultures of Bacillus selenitireducens, an anaerobic halophile previously isolated from sediments of Mono Lake, CA. Up to 73% and 68% of red amorphous, biogenic Se0 or chem. Se0, respectively, was reduced to HSe- during growth of B. selenitireducens, (incubation time ~ 200 hrs): oxidation of lactate to acetate as well as cell density increases indicated that a dissimilatory reduction pathway was likely. Reduction was most enhanced when cells were previously grown on elemental sulfur or Se+4. In contrast to the growth experiments, washed cell suspensions of B. selenitireducens exhibited no HSe- production

  14. Design and Optimization of Copper Indium Gallium Selenide Thin Film Solar Cells

    Science.gov (United States)

    2015-09-01

    system is rated at providing 300 W of continuous power that is generated from a set of solar panels rated at 1.6 kW and includes a set of batteries that...region=8 conmob # SOLAR LIGHT (AM 1.5) beam num=1 x.origin=0.5 y.origin=-2 angle =90 am1.5 wavel.start=0.285 wavel.end=1.655 wavel.num=137...OPTIMIZATION OF COPPER INDIUM GALLIUM SELENIDE THIN FILM SOLAR CELLS by Daniel B. Katzman September 2015 Thesis Advisor: Sherif Michael Second

  15. Electrical properties of silver selenide thin films prepared by reactive evaporation

    Indian Academy of Sciences (India)

    M C Santhosh Kumar; B Pradeep

    2002-10-01

    The electrical properties of silver selenide thin films prepared by reactive evaporation have been studied. Samples show a polymorphic phase transition at a temperature of 403 ± 2 K. Hall effect study shows that it has a mobility of 2000 cm2V–1s–1 and carrier concentration of 1018 cm–3 at room temperature. The carriers are of -type. X-ray diffraction study indicates that the as-prepared films are polycrystalline in nature. The lattice parameters were found to be = 4.353 Å, = 6.929 Å and = 7.805 Å.

  16. Structural, optical and electrical properties of chemically deposited copper selenide films

    Indian Academy of Sciences (India)

    R H Bari; V Ganesan; S Potadar; L A Patil

    2009-02-01

    Stoichiometric and nonstoichiometric thin films of copper selenide have been prepared by chemical bath deposition technique at temperature below 60°C on glass substrate. The effect of nonstoichiometry on the optical, electrical and structural properties of the film was studied. The bandgap energy was observed to increase with the increase in at % of copper in composition. The grain size was also observed to increase with the decrease of at % of copper in composition. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), absorption spectroscopy, and AFM. The results are discussed and interpreted.

  17. TOPO-capped silver selenide nanoparticles and their incorporation into polymer nanofibers using electrospinning technique

    Energy Technology Data Exchange (ETDEWEB)

    More, D.S. [Department of Chemistry, Faculty of Applied and Computer Sciences, Vaal University of Technology, Private Bag X021, Vanderbijlpark 1900 (South Africa); Moloto, M.J., E-mail: makwenam@vut.ac.za [Department of Chemistry, Faculty of Applied and Computer Sciences, Vaal University of Technology, Private Bag X021, Vanderbijlpark 1900 (South Africa); Moloto, N. [School of Chemistry, Faculty of Science, University of the Witwatersrand, Private Bag 3, Johannesburg 2050 (South Africa); Matabola, K.P. [Nanotechnology Innovation Centre, Advanced Materials Division, Mintek, Private Bag X3015, Randburg 2125 South Africa (South Africa)

    2015-05-15

    Highlights: • Ag{sub 2}Se nanoparticles produced spherical particles with sizes 12 nm (180 °C) and 27 nm (200 °C). • Higher temperature produced increased particle size (∼75 nm) and changed in shape. • Ag{sub 2}Se nanoparticles (0.2–0.6%) added into PVP (35–45%) to yield reduced fiber beading. • Polymer nanofibers electrospun at 11–20 kV produced fiber diameters of 425–461 nm. • Optical properties in the fibers were observed due to the Ag{sub 2}Se nanoparticles loaded. - Abstract: Electrospinning is the most common technique for fabricating polymer fibers as well as nanoparticles embedded polymer fibers. Silver selenide nanoparticles were synthesized using tri-n-octylphosphine (TOP) as solvent and tri-n-octylphosphine oxide (TOPO) as capping environment. Silver selenide was prepared by reacting silver nitrate and selenium with tri-n-octylphosphine (TOP) to form TOP–Ag and TOP–Se solutions. Both absorption and emission spectra signify the formation of nanoparticles as well as the TEM which revealed spherical particles with an average particle size of 22 nm. The polymer, PVP used was prepared at concentrations ranging from (35 to 45 wt%) and the TOPO-capped silver selenide nanoparticles (0.2 and 0.6 wt%) were incorporated into them and electrospun by varying the voltage from 11 to 20 kV. The SEM images of the Ag{sub 2}Se/PVP composite fibers revealed the fibers of diameters with average values of 425 and 461 nm. The X-ray diffraction results show peaks which were identified due to α-Ag{sub 2}Se body centered cubic compound. The sharp peak observed for all the samples at 2θ = 44.5 suggest the presence of Ag in the face centered cubic which can be attributed to higher concentration of silver nitrate used with molar ratio of selenium to silver and the abundance of silver in the silver selenide crystal. Fourier transform infrared spectroscopy, thermogravimetric analysis (TGA) and ultraviolet–visible spectroscopy were used to characterize the

  18. Structure and physical properties of gallium selenide laser-intercalated with nickel

    Science.gov (United States)

    Pokladok, N. T.; Grygorchak, I. I.; Lukiyanets, B. A.; Popovich, D. I.

    2007-04-01

    Intercalated crystals of indium and gallium selenide are prepared. It is shown that laser intercalation of nickel into GaSe samples leads to a giant magnetoresistive effect whose magnitude and sign depend on the concentration of the guest component. The giant magnetoresistive effect in the InSe intercalation compounds is considerably weaker and does not exceed 5%. The experimental data obtained are explained in terms of magnetic delocalization (localization) of charge carriers with the participation of states of intercalated magnetically active atoms in the vicinity of the Fermi level.

  19. Chelators for investigating zinc metalloneurochemistry.

    Science.gov (United States)

    Radford, Robert J; Lippard, Stephen J

    2013-04-01

    The physiology and pathology of mobile zinc signaling has become an important topic in metalloneurochemistry. To study the action of mobile zinc effectively, specialized tools are required that probe the temporal and positional changes of zinc ions within live tissue and cells. In the present article we describe the design and implementation of selective zinc chelators as antagonists to interrogate the function of mobile zinc, with an emphasis on the pools of vesicular zinc in the terminals of hippocampal mossy fiber buttons.

  20. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  1. Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

    Science.gov (United States)

    Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-11-01

    ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

  2. Carbon nanotube assisted Lift off of GaN layers on sapphire

    Science.gov (United States)

    Long, Hao; Feng, Xiaohui; Wei, Yang; Yu, Tongjun; Fan, Shoushan; Ying, Leiying; Zhang, Baoping

    2017-02-01

    Laser lift off (LLO) was one of the most essential processes in fabrication of vertical GaN-based LEDs. However, traditional laser lift off of GaN on sapphire substrates needed high laser energy threshold, which deteriorated the GaN crystal. In this paper, it was found that inserting carbon nanotube between GaN and sapphire could effectively reduce the laser energy threshold in GaN LLO, from 1.5 J /cm2 of conventional GaN/sapphire to 1.3 J /cm2 of CNT inserted GaN/sapphire. The temperature distributions at the GaN/sapphire interfaces with and without CNTs were simulated by the finite elements calculation under laser irradiation. It was found that, due to the higher laser absorption coefficient of CNT, the CNT played as a powerful heating wire, sending out the thermal outside to elevate the GaN's temperature, and thus reduce the laser threshold for LLO. Raman and photoluminescence measurements indicated that residual stress of GaN membranes was as small as 0.3 GPa by the carbon nanotube assisted LLO. This work not only opens new application of CNTs, but also demonstrates the potential of high performance blue and green LEDs.

  3. Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; C.D. Beling; S. Fung

    2005-01-01

    @@ Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data,and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al+ ions, are also investigated. Studies on Al+ implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al+ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.

  4. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  5. A method for analysis of dimethyl selenide and dimethyl diselenide by LC-ICP-DRC-MS.

    Science.gov (United States)

    Lunøe, Kristoffer; Skov, Søren; Gabel-Jensen, Charlotte; Stürup, Stefan; Gammelgaard, Bente

    2010-12-01

    The aim of this work was to develop a simple and fast high performance liquid chromatography-inductively coupled argon plasma (ICP) mass spectrometry (MS) method capable of separating and detecting the two volatile selenium species dimethyl selenide (DMeSe) and dimethyl diselenide (DMeDSe) in biological samples. Dimethyl selenide and dimethyl diselenide were separated on a short reversed phase column using an eluent containing 40% methanol and detected by dynamic reaction cell ICP-MS monitoring the (80)Se isotope. The limit of detection was 8 nM for both species (corresponding to 0.6 and 1.3 μg Se/L for DMeDSe and DMeSe, respectively). Both compounds exhibited a linear signal-concentration relationship in the investigated concentration range of 0.1-1 μM with a precision on the determinations better than 3%. The method was applied for analysis of samples from cancer cell lines incubated with methylseleninic acid, selenomethionine, Se-methylselenocysteine, and sodium selenite. DMeDSe were detected in some samples. The method offers a simple and fast analysis of DMeDSe and DMeSe using standard liquid chromatography coupled with ICP-MS equipment and interfacing.

  6. Transparent metal selenide alloy counter electrodes for high-efficiency bifacial dye-sensitized solar cells.

    Science.gov (United States)

    Duan, Yanyan; Tang, Qunwei; Liu, Juan; He, Benlin; Yu, Liangmin

    2014-12-22

    The exploration of cost-effective and transparent counter electrodes (CEs) is a persistent objective in the development of bifacial dye-sensitized solar cells (DSSCs). Transparent counter electrodes based on binary-alloy metal selenides (M-Se; M=Co, Ni, Cu, Fe, Ru) are now obtained by a mild, solution-based method and employed in efficient bifacial DSSCs. Owing to superior charge-transfer ability for the I(-) /I3 (-) redox couple, electrocatalytic activity toward I3 (-) reduction, and optical transparency, the bifacial DSSCs with CEs consisting of a metal selenide alloy yield front and rear efficiencies of 8.30 % and 4.63 % for Co0.85 Se, 7.85 % and 4.37 % for Ni0.85 Se, 6.43 % and 4.24 % for Cu0.50 Se, 7.64 % and 5.05 % for FeSe, and 9.22 % and 5.90 % for Ru0.33 Se in comparison with 6.18 % and 3.56 % for a cell with an electrode based on pristine platinum, respectively. Moreover, fast activity onset, high multiple start/stop capability, and relatively good stability demonstrate that these new electrodes should find applications in solar panels. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Asymmetric supercapacitors with metal-like ternary selenides and porous graphene electrodes

    KAUST Repository

    Xia, Chuan

    2016-04-14

    Asymmetric supercapacitors provide a promising approach to fabricate capacitive energy storage devices with high energy and power densities. In this work, asymmetric supercapacitors with excellent performance have been fabricated using ternary (Ni, Co)0.85Se on carbon fabric as bind-free positive electrode and porous free-standing graphene films as negative electrode. Owing to their metal-like conductivity (~1.67×106 S m−1), significant electrochemical activity, and superhydrophilic nature, our nanostructured ternary nickel cobalt selenides result in a much higher areal capacitance (2.33 F cm−2 at 4 mA cm−2), better rate performance and cycling stability than their binary selenide equivalents, and other ternary oxides and chalcogenides. Those hybrid supercapacitors can afford impressive areal capacitance and stack capacitance of 529.3 mF cm−2 and 6330 mF cm−3 at 1 mA cm−2, respectively. More impressively, our optimized asymmetric device operating at 1.8 V delivers a very high stack energy density of 2.85 mWh cm−3 at a stack power density of 10.76 mW cm−3, as well as 85% capacitance retention after 10,000 continuous charge-discharge cycles. Even at a high stack power density of 1173 mW cm−3, this device still deliveries a stack energy density of 1.19 mWh cm−3, superior to most of the reported supercapacitors.

  8. Thermochemically evolved nanoplatelets of bismuth selenide with enhanced thermoelectric figure of merit

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Zulfiqar; Cao, Chuanbao, E-mail: cbcao@bit.edu.cn; Butt, Faheem K.; Tahir, Muhammad; Tanveer, M.; Aslam, Imran; Rizwan, Muhammad; Idrees, Faryal; Khalid, Syed [Research Centre of Materials Science, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); Butt, Sajid [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-11-15

    We firstly present a simple thermochemical method to fabricate high-quality Bi{sub 2}Se{sub 3} nanoplatelets with enhanced figure of merit using elemental bismuth and selenium powders as precursors. The crystal structure of as synthesized products is characterized via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) measurements. Morphological and chemical synthetic parameters are investigated through a series of experiments; thickness and composition of the platelets are well controlled in large scale production. Subsequently spark plasma sintering (SPS) is performed to fabricate n-type nanostructured bulk thermoelectric materials. Raman Spectroscopy of the two selected samples with approximately of 50 and 100 nm thicknesses shows three vibrational modes. The lower thickness sample exhibits the maximum red shift of about 2.17 cm{sup -1} and maximum broadening of about 10 cm{sup -1} by in-plane vibrational mode E{sup 2}{sub g}. The enhanced value of figure of merit ∼0.41 is obtained for pure phase bismuth selenide to the best of our knowledge. We observe metallic conduction behavior while semiconducting behavior for nanostructured bismuth selenide is reported elsewhere which could be due to different synthetic techniques adopted. These results clearly suggest that our adopted synthetic technique has profound effect on the electronic and thermoelectric transport properties of this material.

  9. Methylselenol formed by spontaneous methylation of selenide is a superior selenium substrate to the thioredoxin and glutaredoxin systems.

    Directory of Open Access Journals (Sweden)

    Aristi P Fernandes

    Full Text Available Naturally occurring selenium compounds like selenite and selenodiglutathione are metabolized to selenide in plants and animals. This highly reactive form of selenium can undergo methylation and form monomethylated and multimethylated species. These redox active selenium metabolites are of particular biological and pharmacological interest since they are potent inducers of apoptosis in cancer cells. The mammalian thioredoxin and glutaredoxin systems efficiently reduce selenite and selenodiglutathione to selenide. The reactions are non-stoichiometric aerobically due to redox cycling of selenide with oxygen and thiols. Using LDI-MS, we identified that the addition of S-adenosylmethionine (SAM to the reactions formed methylselenol. This metabolite was a superior substrate to both the thioredoxin and glutaredoxin systems increasing the velocities of the nonstoichiometric redox cycles three-fold. In vitro cell experiments demonstrated that the presence of SAM increased the cytotoxicity of selenite and selenodiglutathione, which could neither be explained by altered selenium uptake nor impaired extra-cellular redox environment, previously shown to be highly important to selenite uptake and cytotoxicity. Our data suggest that selenide and SAM react spontaneously forming methylselenol, a highly nucleophilic and cytotoxic agent, with important physiological and pharmacological implications for the highly interesting anticancer effects of selenium.

  10. Towards a systematic assessment of errors in diffusion Monte Carlo calculations of semiconductors: Case study of zinc selenide and zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jaehyung [Department of Mechanical Science and Engineering, 1206 W Green Street, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Ertekin, Elif, E-mail: ertekin@illinois.edu [Department of Mechanical Science and Engineering, 1206 W Green Street, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); International Institute for Carbon Neutral Energy Research - WPI-I" 2CNER, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395 (Japan)

    2015-12-14

    The fixed node diffusion Monte Carlo (DMC) method has attracted interest in recent years as a way to calculate properties of solid materials with high accuracy. However, the framework for the calculation of properties such as total energies, atomization energies, and excited state energies is not yet fully established. Several outstanding questions remain as to the effect of pseudopotentials, the magnitude of the fixed node error, and the size of supercell finite size effects. Here, we consider in detail the semiconductors ZnSe and ZnO and carry out systematic studies to assess the magnitude of the energy differences arising from controlled and uncontrolled approximations in DMC. The former include time step errors and supercell finite size effects for ground and optically excited states, and the latter include pseudopotentials, the pseudopotential localization approximation, and the fixed node approximation. We find that for these compounds, the errors can be controlled to good precision using modern computational resources and that quantum Monte Carlo calculations using Dirac-Fock pseudopotentials can offer good estimates of both cohesive energy and the gap of these systems. We do however observe differences in calculated optical gaps that arise when different pseudopotentials are used.

  11. How to do a Weibull statistical analysis of flexural strength data: application to AlON, diamond, zinc selenide, and zinc sulfide

    Science.gov (United States)

    Klein, Claude A.; Miller, Richard P.

    2001-09-01

    For the purpose of assessing the strength of engineering ceramics, it is common practice to interpret the measured stresses at fracture in the light of a semi-empirical expression derived from Weibull's theory of brittle fracture, i.e., ln[-ln(1-P)]=-mln((sigma) N)+mln((sigma) ), where P is the cumulative failure probability, (sigma) is the applied tensile stress, m is the Weibull modulus, and (sigma) N is the nominal strength. The strength of (sigma) N, however, does not represent a true measure because it depends not only on the test method but also on the size of the volume or the surface subjected to tensile stresses. In this paper we intend to first clarify issues relating to the application of Weibull's theory of fracture and then make use of the theory to assess the results of equibiaxial flexure testing that was carried out on polycrystalline infrared-transmitting materials. These materials are brittle ceramics, which most frequently fail as a consequence of tensile stresses acting on surface flaws. Since equibiaxial flexure testing is the preferred method of measuring the strength of optical ceramics, we propose to formulate the failure-probability equation in terms of a characteristic strength, (sigma) C, for biaxial loadings, i.e., P=1-exp{-(pi) (ro/cm)2[(Gamma) (1+1/m)]m((sigma) /(sigma) C)m}, where ro is the radius of the loading ring (in centimeter) and (Gamma) (z) designates the gamma function. A Weibull statistical analysis of equibiaxial strength data thus amounts to obtaining the parameters m and (sigma) C, which is best done by directly fitting estimated Pi vs i data to the failure-probability equation; this procedure avoids distorting the distribution through logarithmic linearization and can be implemented by performing a non-linear bivariate regression. Concentric- ring fracture testing performed on five sets of Raytran materials validates the procedure in the sense that the two parameters model appears to describe the experimental failure-probability distributions remarkably well. Specifically, we demonstrate that the wide divergence in published CVD-diamond strength data reflects the poor Weibull modulus of this material and must be attributed to the size effect rather than the quality of the deposits. Finally, the problem of obtaining correct failure stresses from the measured failure loads is examined in the Appendix.

  12. Revelation of Causes of Colour Change in Beryllium-Treated Sapphires

    Institute of Scientific and Technical Information of China (English)

    Pichet Limsuwan; Siwaporn Meejoo; Asanee Somdee; Kheamrutai Thamaphat; Treedej Kittiauchawal; Atitaya Siripinyanond; Jurek Krzystck

    2008-01-01

    Blue sapphires are treated with Be in oxidizing atmosphere to change the blue colour into yellow. Untreated and Be-treated samples are examined using laser ablation inductively coupled-plasma-mass spectrometry (LA-ICP-MS), electron spin resonance (ESR) and ultraviolet-visible (UV-vis) spectroscopy. The results show that the yellow colouration in Be-heated blue sapphires is not due to Be diffusion from the surface of sapphire. Be behaves as a sole catalyst in this process. We find that the charge transfer between the ferrous (Fe2+) and ferric (Fe3+) is the reason of the colour change. The above conclusions are confirmed by ESR measurements to determine the connections between the Fe3+ ions before and after Be-treated heat treatments.

  13. Sapphire hard X-ray Fabry-Perot resonators for synchrotron experiments.

    Science.gov (United States)

    Tsai, Yi Wei; Wu, Yu Hsin; Chang, Ying Yi; Liu, Wen Chung; Liu, Hong Lin; Chu, Chia Hong; Chen, Pei Chi; Lin, Pao Te; Fu, Chien Chung; Chang, Shih Lin

    2016-05-01

    Hard X-ray Fabry-Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al2O3, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X-rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X-ray cavity resonance and measurements using scanning electron microscopic and X-ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions.

  14. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  15. Stability of trapped charges in sapphires and alumina ceramics: Evaluation by secondary electron emission

    Science.gov (United States)

    Zarbout, K.; Si Ahmed, A.; Moya, G.; Bernardini, J.; Goeuriot, D.; Kallel, A.

    2008-03-01

    The stability of trapped charges in sapphires and alumina ceramics is characterized via an experimental parameter expressing the variation of the secondary electron emission yield between two electron injections performed in a scanning electron microscope. Two types of sapphires and polycrystalline alumina, which differ mainly by their impurity content, are investigated in the temperature range 300-663K. The stable trapping behavior in sapphires is attributed to trapping in different defects, whose nature depends on the purity level. In alumina ceramics, the ability to trap charges in a stable way is stronger in samples of high impurity content. In the low impurity samples, stable trapping is promoted when the grain diameter decreases, whereas the reverse is observed in high impurity materials. These behaviors can stem from a gettering effect occurring during sintering. The strong dependence of the variation of the secondary electron emission yield on the grain diameter and impurities enables a scaling of the stable trapping ability of alumina materials.

  16. Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method

    Science.gov (United States)

    Ma, Wencheng; Zhao, Wenhan; Wu, Ming; Ding, Guoqiang; Liu, Lijun

    2017-09-01

    Transient numerical calculations were carried out to predict the evolutions of temperature and thermal stress in sapphire single crystal during the cooling process by heat exchanger method (HEM). Internal radiation in the semitransparent sapphire crystal was taken into account using the finite volume method (FVM) in the global heat transfer model. The numerical results seem to indicate that the narrow bottom region of the sapphire crystal is subjected to high thermal stress during the cooling process, which could be responsible for the seed cracking of the as-grown crystal, while the thermal stress is relatively small in the central main body of the crystal, and is less than 10 MPa during the whole cooling process. The fast decrease of the thermal stress in the bottom region of the crystal during the initial stage of cooling process is dominated by the reduction of the cooling helium gas in the heat exchanger shaft, and is not significantly affected by the heating power reduction rate.

  17. Rate of F center formation in sapphire under low-energy low-fluence Ar+ irradiation

    Science.gov (United States)

    Epie, E. N.; Wijesundera, D. N.; Tilakaratne, B. P.; Chen, Q. Y.; Chu, W. K.

    2016-03-01

    Ionoluminescence, optical absorption spectroscopy and Rutherford backscattering spectrometry channelling (RBS-C) have been used to study the rate of F center formation with fluence in 170 keV Ar+ irradiated single crystals of α-Al2O3 (sapphire) at room temperature. Implantation fluences range between 1013 cm-2 and 5 ×1014 cm-2. F center density (NF) has been found to display an initial rapid linear increase with Ar+ fluence followed by saturation to a maximum value of 1.74 ×1015 cm-2. Experimental results show a 1-1 correlation between radiation damage in the oxygen sublattice and F center density. This suggest F center kinetics in sapphire under low-energy low-fluence Ar irradiation is a direct consequence of dynamic competition between oxygen defect creation and recombination. An attempt has also been made to extend this discussion to F center kinetics in sapphire under swift heavy ion irradiation.

  18. High-pressure sapphire cell for phase equilibria measurements of CO2/organic/water systems.

    Science.gov (United States)

    Pollet, Pamela; Ethier, Amy L; Senter, James C; Eckert, Charles A; Liotta, Charles L

    2014-01-24

    The high pressure sapphire cell apparatus was constructed to visually determine the composition of multiphase systems without physical sampling. Specifically, the sapphire cell enables visual data collection from multiple loadings to solve a set of material balances to precisely determine phase composition. Ternary phase diagrams can then be established to determine the proportion of each component in each phase at a given condition. In principle, any ternary system can be studied although ternary systems (gas-liquid-liquid) are the specific examples discussed herein. For instance, the ternary THF-Water-CO2 system was studied at 25 and 40 °C and is described herein. Of key importance, this technique does not require sampling. Circumventing the possible disturbance of the system equilibrium upon sampling, inherent measurement errors, and technical difficulties of physically sampling under pressure is a significant benefit of this technique. Perhaps as important, the sapphire cell also enables the direct visual observation of the phase behavior. In fact, as the CO2 pressure is increased, the homogeneous THF-Water solution phase splits at about 2 MPa. With this technique, it was possible to easily and clearly observe the cloud point and determine the composition of the newly formed phases as a function of pressure. The data acquired with the sapphire cell technique can be used for many applications. In our case, we measured swelling and composition for tunable solvents, like gas-expanded liquids, gas-expanded ionic liquids and Organic Aqueous Tunable Systems (OATS)(1-4). For the latest system, OATS, the high-pressure sapphire cell enabled the study of (1) phase behavior as a function of pressure and temperature, (2) composition of each phase (gas-liquid-liquid) as a function of pressure and temperature and (3) catalyst partitioning in the two liquid phases as a function of pressure and composition. Finally, the sapphire cell is an especially effective tool to gather

  19. Exploring zinc coordination in novel zinc battery electrolytes.

    Science.gov (United States)

    Kar, Mega; Winther-Jensen, Bjorn; Forsyth, Maria; MacFarlane, Douglas R

    2014-06-14

    The coordination of zinc ions by tetraglyme has been investigated here to support the development of novel electrolytes for rechargeable zinc batteries. Zn(2+) reduction is electrochemically reversible from tetraglyme. The spectroscopic data, molar conductivity and thermal behavior as a function of zinc composition, between mole ratios [80 : 20] and [50 : 50] [tetraglyme : zinc chloride], all suggest that strong interactions take place between chloro-zinc complexes and tetraglyme. Varying the concentration of zinc chloride produces a range of zinc-chloro species (ZnClx)(2-x) in solution, which hinder full interaction between the zinc ion and tetraglyme. Both the [70 : 30] and [50 : 50] mixtures are promising electrolyte candidates for reversible zinc batteries, such as the zinc-air device.

  20. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  1. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Science.gov (United States)

    Marques, C.; Franco, N.; Alves, L. C.; da Silva, R. C.; Alves, E.; Safran, G.; McHargue, C. J.

    2007-04-01

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  2. Tunable Sum Frequency Mixing of a Ti∶sapphire Laser and a Nd∶YAG Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; YAO Jianquan; YU Yizhong; YU Xuanyi; XU Jingjun; ZHANG Guangyin

    2001-01-01

    In this paper the theoretical and experimental results of sum-frequency mixing of a Ti∶sapphire laser and a 1.064 μm Nd∶YAG laser are presented. By using two KTP crystals cut at θ=76° and 85° (φ=90° in both crystals), respectively, the sum-frequency mixing tuning range from 459.3 to 509.6 nm in one Ti∶sapphire laser setup is experimentally achieved. The maximum output energy was 14.6 mJ and the energy conversion efficiency was up to 15.2%.

  3. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Energy Technology Data Exchange (ETDEWEB)

    Marques, C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Franco, N. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, L.C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Silva, R.C. da [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, E. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal)]. E-mail: ealves@itn.pt; Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, C.J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2007-04-15

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 x 10{sup 17} cm{sup -2} at room temperature, followed by annealing at 1000 deg. C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  4. Birefringence measurements in single crystal sapphire and calcite shocked along the a axis

    Science.gov (United States)

    Tear, Gareth R.; Chapman, David J.; Eakins, Daniel E.; Proud, William G.

    2017-01-01

    Calcite and sapphire were shock compressed along the direction (a axis) in a plate impact configuration. Polarimetery and Photonic Doppler Velocimetery (PDV) were used to measure the change in birefringence with particle velocity in the shock direction. Results for sapphire agree well with linear photoelastic theory and current literature showing a linear relationship between birefringence and particle velocity up to 310 m s-1. A maximum change in birefringence of 5% was observed. Calcite however showed anomolous behaviour with no detectable change in birefringence (less than 0.1%) over the range of particle velocities studied (up to 75 m s-1).

  5. Intracavity frequency doubling of CW Ti:Sapphire laser utilising BiBO nonlinear crystal

    DEFF Research Database (Denmark)

    Thorhauge, Morten; Mortensen, Jesper Liltorp; Tidemand-Lichtenberg, Peter

    Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm.......Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm....

  6. Behaviors of optical and chemical state of Nb+ implanted sapphire after annealing

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of the radiation damage of sapphire crystal, produced by implantation with 380 keV Nb+ ion followed by annealing in a series of steps from 500 to 1100℃C at reducing atmosphere, was investigated in optical absorption and XPS measurements. It is found that the implanted niobium in sapphire is in different local environments with different chemical states after the annealing. The changes in optical density (OD) from the bands, based on the well known F-type centers, show that the annealing behavior of the radiation damage may be divided into different stages due to different mechanisms.

  7. Measurement for titanium density distribution on Ti:sapphire rods for high intensity pump source

    Energy Technology Data Exchange (ETDEWEB)

    Usami, Tsutomu; Nishimura, Akihiko; Sugiyama, Akira [Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan). Kansai Research Establishment

    2001-10-01

    A Ti:sapphire rod of 190 mm length made by Czochralski (CZ) technique was used in the flashlamp pumped high intensity laser for Yb:glass chirped pulse amplification. In the absorption spectroscopy of the rod immersed in an index matching liquid of methylene iodide, heterogeneous Ti{sup 3+} density distribution was measured along the direction of length. It has been first clarified that the Ti:sapphire rod grown by the CZ technique has 20% difference of the Ti{sup 3+} density at the both ends. (author)

  8. Sapphire: Relation between luminescence of starting materials and luminescence of single crystals

    Science.gov (United States)

    Mogilevsky, R.; Nedilko, S.; Sharafutdinova, L.; Burlay, S.; Sherbatskii, V.; Boyko, V.; Mittl, S.

    2009-10-01

    A relation between photoluminescence (PL) characteristics of different starting materials used for crystal growth and un-doped sapphire single crystals manufactured using various methods of crystal growth (Kyropolus, HEM, Czochralski, and EFG) was found. The crystals grown using the Verneuil starting material exhibited significant PL when any method of crystal growth was used. On the contrary, sapphire samples grown by the same technologies wherein the starting material was EMT HPDA R revealed very low PL. (HPDA R is produced by EMT, Inc., with proprietary and patented technology.)

  9. Reduction of Diaryldiselenides by System of Cp2TiCl2/ BuiMgBr/ THF and Its Application in Synthesis of Unsymmetrical Diaryl Selenides

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Reduction of diaryldiselenides by the system of Cp2TiCl2/BuiMgBr/THF gave the nucleophilic arylselenium complex. They reacted with diaryl iodonium salts to afford unsymmetrical diaryl selenides in high yields.

  10. Colloidally stable selenium@copper selenide core@shell nanoparticles as selenium source for manufacturing of copper-indium-selenide solar cells.

    Science.gov (United States)

    Dong, Hailong; Quintilla, Aina; Cemernjak, Marco; Popescu, Radian; Gerthsen, Dagmar; Ahlswede, Erik; Feldmann, Claus

    2014-02-01

    Selenium nanoparticles with diameters of 100-400nm are prepared via hydrazine-driven reduction of selenious acid. The as-prepared amorphous, red selenium (a-Se) particles were neither a stable phase nor were they colloidally stable. Due to phase transition to crystalline (trigonal), grey selenium (t-Se) at or even below room temperature, the particles merged rapidly and recrystallized as micronsized crystal needles. As a consequence, such Se particles were not suited for layer deposition and as a precursor to manufacture thin-film CIS (copper indium selenide/CuInSe2) solar cells. To overcome this restriction, Se@CuSe core@shell particles are presented here. For these Se@CuSe core@shell nanoparticles, the phase transition a-Se→t-Se is shifted to temperatures higher than 100°C. Moreover, a spherical shape of the particles is retained even after phase transition. Composition and structure of the Se@CuSe core@shell nanostructure are evidenced by electron microscopy (SEM/STEM), DLS, XRD, FT-IR and line-scan EDXS. As a conceptual study, the newly formed Se@CuSe core@shell nanostructures with CuSe acting as a protecting layer to increase the phase-transition temperature and to improve the colloidal stability were used as a selenium precursor for manufacturing of thin-film CIS solar cells and already lead to conversion efficiencies up to 3%.

  11. Zinc electrode and rechargeable zinc-air battery

    Science.gov (United States)

    Ross, Jr., Philip N.

    1989-01-01

    An improved zinc electrode is disclosed for a rechargeable zinc-air battery comprising an outer frame and a porous foam electrode support within the frame which is treated prior to the deposition of zinc thereon to inhibit the formation of zinc dendrites on the external surface thereof. The outer frame is provided with passageways for circulating an alkaline electrolyte through the treated zinc-coated porous foam. A novel rechargeable zinc-air battery system is also disclosed which utilizes the improved zinc electrode and further includes an alkaline electrolyte within said battery circulating through the passageways in the zinc electrode and an external electrolyte circulation means which has an electrolyte reservoir external to the battery case including filter means to filter solids out of the electrolyte as it circulates to the external reservoir and pump means for recirculating electrolyte from the external reservoir to the zinc electrode.

  12. Zinc in diet

    Science.gov (United States)

    ... Zinc is also needed for the senses of smell and taste. During pregnancy, infancy, and childhood the ... sense of taste Problems with the sense of smell Skin sores Slow growth Trouble seeing in the ...

  13. Zinc level and obesity

    Directory of Open Access Journals (Sweden)

    Doaa S.E. Zaky

    2013-01-01

    Conclusion Plasma zinc concentration in obese individuals showed an inverse relationship with the waist circumference and BMI as well as serum low-density lipoprotein-cholesterol and correlated positively with high-density lipoprotein.

  14. The effect of structural dimensionality on the electrocatalytic properties of the nickel selenide phase.

    Science.gov (United States)

    Kukunuri, Suresh; Krishnan, M Reshma; Sampath, S

    2015-09-28

    Nickel selenide (NiSe) nanostructures possessing different morphologies of wires, spheres and hexagons are synthesized by varying the selenium precursors, selenourea, selenium dioxide (SeO2) and potassium selenocyanate (KSeCN), respectively, and are characterized using X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and scanning electron microscopy techniques. Electrical measurements of a single nanowire and a hexagon carried out on devices fabricated by the focused ion beam (FIB) technique depict the semiconducting nature of NiSe and its ability to act as a visible light photodetector. The three different morphologies are used as catalysts for hydrogen evolution (HER), oxygen reduction (ORR) and glucose oxidation reactions. The wire morphology is found to be better than that of spheres and hexagons for all the reactions. Among the reactions studied, NiSe is found to be good for HER and glucose oxidation while ORR seems to terminate at the peroxide stage.

  15. Copper Selenide Nanosnakes: Bovine Serum Albumin-Assisted Room Temperature Controllable Synthesis and Characterization

    Science.gov (United States)

    Huang, Peng; Kong, Yifei; Li, Zhiming; Gao, Feng; Cui, Daxiang

    2010-06-01

    Herein we firstly reported a simple, environment-friendly, controllable synthetic method of CuSe nanosnakes at room temperature using copper salts and sodium selenosulfate as the reactants, and bovine serum albumin (BSA) as foaming agent. As the amounts of selenide ions (Se2-) released from Na2SeSO3 in the solution increased, the cubic and snake-like CuSe nanostructures were formed gradually, the cubic nanostructures were captured by the CuSe nanosnakes, the CuSe nanosnakes grew wider and longer as the reaction time increased. Finally, the cubic CuSe nanostructures were completely replaced by BSA-CuSe nanosnakes. The prepared BSA-CuSe nanosnakes exhibited enhanced biocompatibility than the CuSe nanocrystals, which highly suggest that as-prepared BSA-CuSe nanosnakes have great potentials in applications such as biomedical engineering.

  16. Copper Selenide Nanocrystals as a High Performance, Solution Processed Thermoelectric Material

    Science.gov (United States)

    Forster, Jason; Lynch, Jared; Coates, Nelson; Sahu, Ayaskanta; Liu, Jun; Cahill, David; Urban, Jeff

    Nano-structuring a thermoelectric material often results in enhanced performance due to a decrease in the materials' thermal conductivity. Traditional nano-structuring techniques involve ball milling a bulk material followed by spark plasma sintering, a very energy intensive process. In this talk, we will describe the development of a self-assembled, high-performing, nano-structured thin film based on copper selenide nanocrystals. Mild thermal annealing of these films results in concurrent increases in the Seebeck coefficient and electrical conductivity. We are able to achieve power factors at room temperature that are as high as the best spark plasma sintered materials. These solution-processed films have potential applications as conformal, flexible materials for thermoelectric power generation.

  17. Copper Selenide Nanosnakes: Bovine Serum Albumin-Assisted Room Temperature Controllable Synthesis and Characterization

    Directory of Open Access Journals (Sweden)

    Huang Peng

    2010-01-01

    Full Text Available Abstract Herein we firstly reported a simple, environment-friendly, controllable synthetic method of CuSe nanosnakes at room temperature using copper salts and sodium selenosulfate as the reactants, and bovine serum albumin (BSA as foaming agent. As the amounts of selenide ions (Se2− released from Na2SeSO3 in the solution increased, the cubic and snake-like CuSe nanostructures were formed gradually, the cubic nanostructures were captured by the CuSe nanosnakes, the CuSe nanosnakes grew wider and longer as the reaction time increased. Finally, the cubic CuSe nanostructures were completely replaced by BSA–CuSe nanosnakes. The prepared BSA–CuSe nanosnakes exhibited enhanced biocompatibility than the CuSe nanocrystals, which highly suggest that as-prepared BSA–CuSe nanosnakes have great potentials in applications such as biomedical engineering.

  18. Lead Selenide Nanostructures Self-Assembled across Multiple Length Scales and Dimensions

    Directory of Open Access Journals (Sweden)

    Evan K. Wujcik

    2016-01-01

    Full Text Available A self-assembly approach to lead selenide (PbSe structures that have organized across multiple length scales and multiple dimensions has been achieved. These structures consist of angstrom-scale 0D PbSe crystals, synthesized via a hot solution process, which have stacked into 1D nanorods via aligned dipoles. These 1D nanorods have arranged into nanoscale 2D sheets via directional short-ranged attraction. The nanoscale 2D sheets then further aligned into larger 2D microscale planes. In this study, the authors have characterized the PbSe structures via normal and cryo-TEM and EDX showing that this multiscale multidimensional self-assembled alignment is not due to drying effects. These PbSe structures hold promise for applications in advanced materials—particularly electronic technologies, where alignment can aid in device performance.

  19. Effect of capping agents on optical and antibacterial properties of cadmium selenide quantum dots

    Indian Academy of Sciences (India)

    Deepika; Rakesh Dhar; Suman Singh; Atul Kumar

    2015-09-01

    Cadmium selenide quantum dots (CdSe QDs) were synthesized in aqueous phase by the freezing temperature injection technique using different capping agents (viz. thioglycolic acid, 1-thioglycerol, L-cysteine). Absorption spectra of CdSe QDs exhibited a blue shift as compared to its bulk counterpart, which is an indication of quantum confinement effect. The photoluminescence spectra of CdSe QDs confirmed that the particles are poly-dispersed and possess enhanced luminescent property, depending upon the chemical nature of capping agents. The QDs have been characterized by Fourier-transform infrared spectroscopy, atomic absorption spectroscopy and transmission electron microscopy. Further, antimicrobial activity of as-prepared QDs has also been investigated using the disk diffusion method.

  20. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    Science.gov (United States)

    Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

    2014-01-01

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

  1. A Rapid and Cost-Effective Laser Based Synthesis of High Purity Cadmium Selenide Quantum Dots.

    Science.gov (United States)

    Gondall, M A; Qahtan, Talal F; Dastageer, M A; Yamani, Z H; Anjum, D H

    2016-01-01

    A rapid and cost effective method is developed to synthesize high purity cadmium Selenide (CdSe) quantum dots in acetone medium using second harmonic of Nd:YAG nanosecond pulsed laser of 532 nm wavelength. The thermal agglomeration due the nanosecond pulse duration of the laser was successfully eliminated by using unfocussed laser beam and thereby providing a favorable conditions for the synthesis of quantum dots having the grain size of 3 nm. The morphological and optical characterizations like XRD, HRTEM, optical absorption of the synthesized CdSe quantum dots, reveal that the material possesses the similar characteristics of the one synthesized through cumbersome wet chemical methods. Relative to the CdSe bulk material, the synthesized CdSe quantum dots showed a blue shift in the measured band gap energy from near infrared spectral region to visible region, making this material very attractive for many solar energy harvesting applications like photo-catalysis and solar cells.

  2. Growth and Low Temperature Transport Measurements of Pure and Doped Bismuth Selenide

    DEFF Research Database (Denmark)

    Mlack, Jerome Thomas

    Se3, which is a strong spin orbit material and a topological insulator. I describe a synthesis technique and low-temperature transport measurements of nanostructures of Bi2Se3, that when annealed with palladium show evidence of superconductivity. The growth method is a catalyst-free atmospheric...... pressure vapor-solid growth. The growth method yields a variety of nanostructures, and materials analysis shows ordered structures of bismuth selenide in all cases. Low-temperature measurements of as-grown nanostructures indicate tunable carrier density in all samples. By doping the nanostructures...... with palladium via annealing, the transport properties of the samples can be altered to exhibit superconductivity. Thin films of palladium are deposited on prefabricated Bi2Se3 nanodevices and annealed at temperatures in excess of 100 Celsius. We find that Bi2Se3 absorbs Pd under these conditions...

  3. Transparent nickel selenide alloy counter electrodes for bifacial dye-sensitized solar cells exceeding 10% efficiency.

    Science.gov (United States)

    Duan, Yanyan; Tang, Qunwei; He, Benlin; Li, Ru; Yu, Liangmin

    2014-11-07

    In the current work, we report a series of bifacial dye-sensitized solar cells (DSSCs) that provide power conversion efficiencies of more than 10% from bifacial irradiation. The device comprises an N719-sensitized TiO2 anode, a transparent nickel selenide (Ni-Se) alloy counter electrode (CE), and liquid electrolyte containing I(-)/I3(-) redox couples. Because of the high optical transparency, electron conduction ability, electrocatalytic activity of Ni-Se CEs, as well as dye illumination, electron excitation and power conversion efficiency have been remarkably enhanced. Results indicate that incident light from a transparent CE has a compensation effect to the light from the anode. The impressive efficiency along with simple preparation of the cost-effective Ni-Se alloy CEs highlights the potential application of bifacial illumination technique in robust DSSCs.

  4. Counter electrodes from binary ruthenium selenide alloys for dye-sensitized solar cells

    Science.gov (United States)

    Li, Pinjiang; Cai, Hongyuan; Tang, Qunwei; He, Benlin; Lin, Lin

    2014-12-01

    Dye-sensitized solar cell (DSSC) is a promising solution to global energy and environmental problems because of its merits on clean, cost-effectiveness, relatively high efficiency, and easy fabrication. However, the reduction of fabrication cost without sacrifice of power conversion efficiencies of the DSSCs is a golden rule for their commercialization. Here we design a new binary ruthenium selenide (Ru-Se) alloy counter electrodes (CEs) by a low-temperature hydrothermal reduction method. The electrochemical behaviors are evaluated by cyclic voltammogram, electrochemical impedance, and Tafel measurements, giving an optimized Ru/Se molar ratio of 1:1. The DSSC device with RuSe alloy CE achieves a power conversion efficiency of 7.15%, which is higher than 5.79% from Pt-only CE based DSSC. The new concept, easy process along with promising results provide a new approach for reducing cost but enhancing photovoltaic performances of DSSCs.

  5. Searching for new thermoelectric materials: some examples among oxides, sulfides and selenides

    Science.gov (United States)

    Hébert, S.; Berthebaud, D.; Daou, R.; Bréard, Y.; Pelloquin, D.; Guilmeau, E.; Gascoin, F.; Lebedev, O.; Maignan, A.

    2016-01-01

    Different families of thermoelectric materials have been investigated since the discovery of thermoelectric effects in the mid-19th century, materials mostly belonging to the family of degenerate semi-conductors. In the last 20 years, new thermoelectric materials have been investigated following different theoretical proposals, showing that nanostructuration, electronic correlations and complex crystallographic structures (low dimensional structures, large number of atoms per lattice, presence of ‘rattlers’…) could enhance the thermoelectric properties by enhancing the Seebeck coefficient and/or reducing the thermal conductivity. In this review, the different strategies used to optimize the thermoelectric properties of oxides and chalcogenides will be presented, starting with a review on thermoelectric oxides. The thermoelectric properties of sulfides and selenides will then be discussed, focusing on layered materials and low dimensional structures (TiS2 and pseudo-hollandites). Some sulfides with promising ZT values will also be presented (tetrahedrites and chalcopyrites).

  6. Searching for new thermoelectric materials: some examples among oxides, sulfides and selenides.

    Science.gov (United States)

    Hébert, S; Berthebaud, D; Daou, R; Bréard, Y; Pelloquin, D; Guilmeau, E; Gascoin, F; Lebedev, O; Maignan, A

    2016-01-13

    Different families of thermoelectric materials have been investigated since the discovery of thermoelectric effects in the mid-19th century, materials mostly belonging to the family of degenerate semi-conductors. In the last 20 years, new thermoelectric materials have been investigated following different theoretical proposals, showing that nanostructuration, electronic correlations and complex crystallographic structures (low dimensional structures, large number of atoms per lattice, presence of 'rattlers'…) could enhance the thermoelectric properties by enhancing the Seebeck coefficient and/or reducing the thermal conductivity. In this review, the different strategies used to optimize the thermoelectric properties of oxides and chalcogenides will be presented, starting with a review on thermoelectric oxides. The thermoelectric properties of sulfides and selenides will then be discussed, focusing on layered materials and low dimensional structures (TiS2 and pseudo-hollandites). Some sulfides with promising ZT values will also be presented (tetrahedrites and chalcopyrites).

  7. Photo-induced cooperative covalent-bond switching in amorphous arsenic selenide

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Balitska, V [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Filipecki, J [Institute of Physics of Jan Dlugosz University, 13/15, Al. Armii Krajowej, Czestochowa, PL-42201 (Poland)

    2005-01-01

    A microstructural mechanism of photoinduced transformations in amorphous arsenic selenide films was studied with IR Fourier-spectroscopy technique in 300-100 cm{sup -1} region. It was shown that stage of irreversible photostructural changes was connected with cooperative process of coordination defect formation accompanied by homopolar chemical bonds switching in heteropolar ones. On the contrary, reversible photoinduced effects were caused by heteropolar chemical bonds switching in homopolar ones, as well as additional channel of bridge heteropolar bonds switching in short-layer ones. The both processes were associated with formation of anomalously coordinated defect pairs and accompanying atomic displacements at the level of medium-range ordering. The developed mathematical simulation procedure testified in a favour of defect-related origin of the reversible photo-thermallyinduced transformations, since their kinetics corresponded to known stretched-exponential dependence, tending to bimolecular behaviour rather then to single-exponential one.

  8. Radiation-induced physical ageing in network arsenic-sulfide/selenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M; Golovchak, R; Kozdras, A; Shpotyuk, O, E-mail: shpotyuk@novas.lviv.ua

    2010-11-15

    Effect of radiation-induced physical ageing is investigated by differential scanning calorimetry method in As{sub x}Se{sub 100-x} (10 {<=} x {<=} 42) and As{sub x}S{sub 100-x} (30 {<=} x {<=} 42) glasses. Obtained results are compared with conventional physical ageing at normal conditions. Significant radiation-induced physical ageing is recorded for glassy As{sub x}S{sub 100-x} within 30 {<=} x < 40 range, while As{sub x}Se{sub 100-x} glasses from the same compositional interval do not show any measurable changes in DSC curves after {gamma}-irradiation. Observed difference in radiation-induced physical ageing in arsenic-sulfide/selenide glasses is explained by a greater lifetime of {gamma}-induced excitations within sulfur-based network in comparison with selenium-based one.

  9. Heterogeneous nanocomposites of silver selenide and hollow platinum nanoparticles toward methanol oxidation reaction

    Science.gov (United States)

    Cui, Penglei; He, Hongyan; Liu, Hui; Zhang, Suojiang; Yang, Jun

    2016-09-01

    Making use of the electronic coupling between different domains in composite nanomaterials is an effective way to enhance the activity of electrocatalysts. Herein, we demonstrate the preparation of nanocomposites consisting of silver selenide (Ag2Se) and platinum (Pt) nanoparticles with a hollow interior by combining the inside-out diffusion of Ag in core-shell Ag-Pt nanoparticles with the synthesis of highly active hydrophobic Se species. In specific, the Ag2Se-hPt nanocomposites are found to have superior activity and stability for methanol oxidation reaction in an acidic condition due to the strong electronic coupling effect between semiconductor and metal domains. This strategy may provide a greener and less expensive way to the large-scale synthesis of Pt-based nanocomposites, and might be used to generate other heterogeneous nanomaterials with technological importance.

  10. Growth and Low Temperature Transport Measurements of Pure and Doped Bismuth Selenide

    DEFF Research Database (Denmark)

    Mlack, Jerome Thomas

    Se3, which is a strong spin orbit material and a topological insulator. I describe a synthesis technique and low-temperature transport measurements of nanostructures of Bi2Se3, that when annealed with palladium show evidence of superconductivity. The growth method is a catalyst-free atmospheric...... pressure vapor-solid growth. The growth method yields a variety of nanostructures, and materials analysis shows ordered structures of bismuth selenide in all cases. Low-temperature measurements of as-grown nanostructures indicate tunable carrier density in all samples. By doping the nanostructures...... and that the absorption of Pd results in evidence of superconductivity, as shown by transport measurements measurements below 1K....

  11. The role of isomorphous substitutions in natural selenides belonging to the pyrite group

    Energy Technology Data Exchange (ETDEWEB)

    Bindi, Luca [Museo di Storia Naturale, sez. di Mineralogia e Litologia, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy)], E-mail: luca.bindi@unifi.it; Cipriani, Curzio [Museo di Storia Naturale, sez. di Mineralogia e Litologia, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Pratesi, Giovanni [Museo di Storia Naturale, sez. di Mineralogia e Litologia, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Dipartimento di Scienze della Terra, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Trosti-Ferroni, Renza [Dipartimento di Scienze della Terra, Universita degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy)

    2008-07-14

    The present paper reports chemical and structural data of selenide minerals belonging to the pyrite group. Eighteen samples of minerals in this group with variable chemical composition (7 samples of penroseite, NiSe{sub 2}; 10 samples of krutaite, CuSe{sub 2}; 1 sample of trogtalite, CoSe{sub 2}) were studied by means of X-ray single-crystal diffraction and electron microprobe. On the basis of information gained from the chemical characterization, we can conclude that a complete solid solution between NiSe{sub 2} and CuSe{sub 2} exists in nature with the absence of pure end-members. Although verified only for the Ni-rich members, we also infer a solid solution between NiSe{sub 2} and CoSe{sub 2}. The unit-cell parameters were modeled using a multiple regression method as a function of the Co, Ni, and Cu contents.

  12. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors...

  13. Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

    Science.gov (United States)

    Offord, Bruce W.

    1992-01-01

    In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

  14. Deep-ultraviolet frequency metrology with a narrowband titanium:sapphire laser

    NARCIS (Netherlands)

    Hannemann, S.

    2007-01-01

    Within the framework of this thesis resaerch project a narrow band titanium:sapphire laser was built. It provides nanosecond pulses that are subsequently upconverted to the deep ultraviolet frequency range. Absolute frequency calibration is achieved by linking the injection seeding light to a

  15. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  16. Laser-assisted microstructuring for Ti:sapphire channel-waveguide fabrication

    NARCIS (Netherlands)

    Crunteanu, A.; Pollnau, Markus; Jänchen, G.; Hibert, C.; Hoffmann, P.; Salathé, R.P.; Eason, R.W.; Shepherd, D.P.

    We report on the fabrication of Ti:sapphire channel waveguides. Such channel waveguides are of interest, e.g., as low-threshold tunable lasers. We investigated several structuring methods including ion beam implantation followed by wet chemical etching strip loading by polyimide spin coating and

  17. Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    WANG Gui-gen; ZHANG Ming-fu; ZUO Hong-bo; HE Xiao-dong; HAN Jie-cai

    2006-01-01

    The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.

  18. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  19. High-power solid-state sapphire whispering gallery mode maser.

    Science.gov (United States)

    Creedon, Daniel L; Benmessaï, Karim; Tobar, Michael E; Hartnett, John G; Bourgeois, Pierre-Yves; Kersale, Yann; Le Floch, Jean-Michel; Giordano, Vincent

    2010-03-01

    We present new results on a cryogenic solid-state maser frequency standard, which relies on the excitation of whispering gallery (WG) modes within a doped monocrystalline sapphire resonator (alpha-Al2O3). Included substitutively within the highest purity HEMEX-grade sapphire crystal lattice are Fe2+ impurities at a concentration of parts per million, an unavoidable result of the manufacturing process. Mass conversion of Fe2+ to Fe3+ ions was achieved by thermally annealing the sapphire in air. Above-threshold maser oscillation was then excited in the resonator at zero applied DC magnetic field by pumping high-Q WG modes coincident in frequency with the electron spin resonance (ESR) energy levels of the Fe3+ spin population. A 2 stage annealing process was undertaken for a sapphire resonator with exceptionally low Fe3+ concentration, resulting in an improvement of 6 orders of magnitude in output power for this particular crystal, and exceeding the previous best implementation of our scheme in another crystal by nearly 20 dB. This represents an output signal 7 orders of magnitude more powerful than a typical commercial hydrogen maser. At this power level, we estimate a limit on the frequency stability of order 1 x 10(-17)/square root(tau) due to the Schawlow-Townes fundamental thermal noise limit.

  20. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

    DEFF Research Database (Denmark)

    König, Karsten; Andersen, Peter E.; Le, Tuan;

    2015-01-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...

  1. New sapphire and ruby components and their manufacture using diamond abrasives

    Science.gov (United States)

    Sauser, D.

    The properties of synthetic aluminum oxides (sapphire and ruby) and their applications in watchmaking (watch bearings and watchglasses) and as hard-wearing components such as centering devices for optical fibres and water jet nozzles for material cutting are discussed. Examples are given of the use of diamonds tools for machining such components, including sawing, drilling, grinding and polishing operations.

  2. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  3. "You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

    Science.gov (United States)

    Pappas, Christine

    2007-01-01

    Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

  4. Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center (SAPMAC) method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.

  5. A century of sapphire crystal growth: origin of the EFG method

    Science.gov (United States)

    Harris, Daniel C.

    2009-08-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Edge-Defined Film-Fed Growth (EFG) was invented by H. Labelle in the 1960s and the Heat Exchanger Method (HEM) was invented by F. Schmid and D. Viechnicki in 1967. Both methods were commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) was invented by Kh. S. Bagdasorov in the Soviet Union in the 1960s. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s. Today, half of the world's sapphire is produced by the GOI method.

  6. Zinc level and obesity

    OpenAIRE

    Doaa S.E Zaky; Eman A Sultan; Mahmoud F Salim; Rana S Dawod

    2013-01-01

    Background Obesity is a chronic condition that is associated with disturbances in the metabolism of zinc. Therefore, the aim of this study was to investigate the relationship between serum zinc level and different clinical and biochemical parameters in obese individuals. Patients and methods Twenty-four individuals with BMI more than 30 kg/m 2 and 14 healthy controls (BMI < 24 kg/m 2 ) were assessed for BMI and waist circumference using anthropometric measurements. Colorimetric tes...

  7. Synthesis and characterization of a nickel selenide series via a hydrothermal process

    Science.gov (United States)

    Sobhani, Azam; Salavati-Niasari, Masoud

    2014-01-01

    A series of nickel selenides (NiSe and NiSe2) has been successfully synthesized from the reaction of SeCl4 with NiCl2ṡ6H2O in the presence of cetyltrimethyl ammonium bromide (CTAB) as surfactant and hydrazine hydrate (N2H4ṡH2O) as reductant at 180 °C for 12 h through a simple hydrothermal method. The morphology, phase structure and composition of NixSey can be controlled by adjusting the Ni/Se ratio of the raw materials, the quantity of reductant, the reaction temperature and so forth. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) analysis. It was found that when the ratio of Ni/Se is 1:1 or 3:2, flower-like assemblies of NiSe nanosheets are formed, at 180 °C for 12 h. When the ratio of Ni/Se is 1:2 at 180 °C, the products are found to be the mixture of hexagonal NiSe and cubic NiSe2. With decrease of nickel content in molar ratio of 1:2 (Ni:Se), nanospheres are agglomerated and microstructures are formed. With the reaction temperature decreasing from 180 °C to 120 °C, we reach pure NiSe2 nanoparticles. The formation mechanism of the nickel selenides has been investigated in detail by means of XRD and SEM analyses.

  8. Hydrothermal synthesis of copper selenides with controllable phases and morphologies from an ionic liquid precursor

    Science.gov (United States)

    Liu, Xiaodi; Duan, Xiaochuan; Peng, Peng; Zheng, Wenjun

    2011-12-01

    Cu2-xSe nanocrystals and CuSe nanoflakes are successfully synthesized through a convenient hydrothermal method from an ionic liquid precursor 1-n-butyl-3-ethylimidazolium methylselenite ([BMIm][SeO2(OCH3)]). The phases and morphologies of the copper selenides can be controlled by simply changing the atom ratio of Cu/Se in the reactants and reaction temperature. Furthermore, it is found that the [BMIm][SeO2(OCH3)] not only serves as Se source but also has influence on the shapes of CuSe nanoflakes. The adsorption of alkyl imidazolium rings ([BMIm]+) onto the (0001) facets of covellite CuSe prohibits the growth in the [0001] direction, and CuSe nuclei growth mainly processes along the six symmetric directions (+/-[01&cmb.macr;11], +/-[101&cmb.macr;1&cmb.macr;], and +/-[1&cmb.macr;100]) to form flakelike CuSe. The obtained copper selenides are characterized by XRD, SEM, EDS, XPS, TEM, and HRTEM. The results indicate that the Cu2-xSe nanocrystals are nearly spherical particles with an average diameter of about 20 nm, the hexagonal CuSe nanoflakes are single crystals with an edge length of 100-400 nm and a thickness of 25-50 nm. The potential formation mechanism of the copper selenides is also proposed.Cu2-xSe nanocrystals and CuSe nanoflakes are successfully synthesized through a convenient hydrothermal method from an ionic liquid precursor 1-n-butyl-3-ethylimidazolium methylselenite ([BMIm][SeO2(OCH3)]). The phases and morphologies of the copper selenides can be controlled by simply changing the atom ratio of Cu/Se in the reactants and reaction temperature. Furthermore, it is found that the [BMIm][SeO2(OCH3)] not only serves as Se source but also has influence on the shapes of CuSe nanoflakes. The adsorption of alkyl imidazolium rings ([BMIm]+) onto the (0001) facets of covellite CuSe prohibits the growth in the [0001] direction, and CuSe nuclei growth mainly processes along the six symmetric directions (+/-[01&cmb.macr;11], +/-[101&cmb.macr;1&cmb.macr;], and +/-[1

  9. The bioavailability of four zinc oxide sources and zinc sulphate in broiler chickens

    OpenAIRE

    Veldkamp, T.; Diepen, van, C.A.; Bikker, P.

    2014-01-01

    Zinc is an essential trace element for all farm animal species. It is commonly included in animal diets as zinc oxide, zinc sulphate or organically bound zinc. Umicore Zinc Chemicals developed zinc oxide products with different mean particle sizes. Umicore Zinc Chemicals requested Wageningen UR Livestock Research to determine the bioavailability of four zinc oxide sources and zinc sulphate in broiler chickens. A precise estimate of the bioavailability of zinc sources is required both for fulf...

  10. Treatment of zinc deficiency without zinc fortification

    Institute of Scientific and Technical Information of China (English)

    Donald OBERLEAS; Barbara F. HARLAND

    2008-01-01

    Zinc (Zn) deficiency in animals became of interest until the 1950s. In this paper, progresses in researches on physi-ology of Zn deficiency in animals, phytate effect on bioavailability of Zn, and role of phytase in healing Zn deficiency of animals were reviewed. Several studies demonstrated that Zn is recycled via the pancreas; the problem of Zn deficiency was controlled by Zn homeostasis. The endogenous secretion of Zn is considered as an important factor influencing Zn deficiency, and the critical molar ratio is 10. Phytate (inositol hexaphosphate) constituted up to 90% of the organically bound phosphorus in seeds. Great improvement has been made in recent years on isolating and measuring phytate, and its structure is clear. Phytate is considered to reduce Zn bioavailability in animal. Phytase is the enzyme that hydrolyzes phytate and is present in yeast, rye bran, wheat bran, barley, triticale, and many bacteria and fungi. Zinc nutrition and bioavailability can be enhanced by addition of phytase to animal feeds. Therefore, using phytase as supplements, the most prevalent Zn deficiency in animals may be effectively corrected without the mining and smelting of several tons of zinc daily needed to correct this deficiency by fortification worldwide.

  11. Tin selenide synthesized by a chemical route: the effect of the annealing conditions in the obtained phase

    Science.gov (United States)

    Bernardes-Silva, Ana Cláudia; Mesquita, A. F.; de Moura Neto, E.; Porto, A. O.; de Lima, G. M.; Ardisson, J. D.; Lameiras, F. S.

    2005-09-01

    The effects of different annealing conditions over the tin selenide obtained from a chemical route are presented in this work. The tin selenide was annealed at 300 and 600 °C under hydrogen, nitrogen and argon atmospheres. The materials were characterized by X-ray diffraction and 119Sn Mössbauer spectroscopy. In the 'as synthetized' material a considerably amount of tin oxide (57%) was detected by Mössbauer spectroscopy. After thermal annealing the amount of these oxides varied according to the temperature and atmosphere used. At 600 °C/hydrogen the smallest amount of tin oxide was obtained (20%). These oxides were formed during the synthetic procedure through the hydrolysis of tin chloride used as reagent.

  12. Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

    Science.gov (United States)

    Lee, Jae-Hoon; Oh, Jeong-Tak; Park, Jin-Sub; Kim, Je-Won; Kim, Yong-Chun; Lee, Jeong-Wook; Cho, Hyung-Koun

    2006-06-01

    To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.

  13. Fluorescence imaging technology (FI) for high-throughput screening of selenide-modified nano-TiO2 catalysts.

    Science.gov (United States)

    Wang, Liping; Lee, Jianchao; Zhang, Meijuan; Duan, Qiannan; Zhang, Jiarui; Qi, Hailang

    2016-02-18

    A high-throughput screening (HTS) method based on fluorescence imaging (FI) was implemented to evaluate the catalytic performance of selenide-modified nano-TiO2. Chemical ink-jet printing (IJP) technology was reformed to fabricate a catalyst library comprising 1405 (Ni(a)Cu(b)Cd(c)Ce(d)In(e)Y(f))Se(x)/TiO2 (M6Se/Ti) composite photocatalysts. Nineteen M6Se/Tis were screened out from the 1405 candidates efficiently.

  14. CONTROL OF LASER RADIATION PARAMETERS: Passive laser Q switches made of glass doped with oxidised nanoparticles of copper selenide

    Science.gov (United States)

    Yumashev, K. V.

    2000-01-01

    Passive Q switching of Nd3+:YAG (λ = 1060 nm) and YAlO3:Nd3+ (1340 nm) lasers, as well as of an Er3+ (1540 nm) glass laser was realised by using glass doped with oxidised nanoparticles of copper selenide. Nonlinear optical properties of the nanoparticles (radius of 25 nm) in a glass matrix were studied by the picosecond absorption spectroscopy technique.

  15. Radioisotope space power generator. Annual report, July 1, 1975--September 30, 1976. [TPM-217 P-type selenides

    Energy Technology Data Exchange (ETDEWEB)

    Elsner, N.B.; Chin, J.; Staley, H.G.; Steeger, E.J.; Gantzel, P.K.

    1977-09-01

    TPM-217 P-type selenide usefulness in thermoelectric converters depends on its dimensional, electrical and thermal stability at high temperature and its compatibility with other converter component materials in a low pressure environment. Experimental efforts have been directed at determining: the vaporization behavior at 900/sup 0/C, the partial pressures of vaporizing species versus temperature, vapor suppression coatings, thermal expansion, dimensional stability, and the high temperature compatibility of TPM-217 with proposed end cap materials.

  16. Reduced Species(HSO-2,SO·-2)Promoted One-Pot Efficient Synthesis of Phenyl Alkyl Selenides

    Institute of Scientific and Technical Information of China (English)

    TANG,Ri-Yuan; ZHONG,Ping; LIN,Qiu-Lian

    2007-01-01

    Reduced species(HSO-2,SO·-2)promoted one-pot synthesis of phenyl alkyl selenides has been developed.This synthetic method was achieved by reactions of diphenyl diselenide with alkyl halides at room temperature.It is noteworthy that the reactions were operated under mild reaction conditions,required short time,and got good resuits.A single electron transfer reaction mechanism was proposed for the reaction.

  17. Near-IR absorption saturation and mechanism of picosecond recovery dynamics of copper selenide nanostructured via alumina

    Science.gov (United States)

    Statkutė, G.; Mikulskas, I.; Tomašiùnas, R.; Jagminas, A.

    2009-06-01

    Absorption saturation at 1.064 μm wavelength in Cu2-xSe material nanostructured by means of an original method—formation and hosting in an array of electrochemically grown alumina voids—was investigated. Columnlike channels provide growth of copper selenide in a shape of nanowire with a fixed diameter. Experimental results obtained from measuring nanowires of various diameters (∅10, 15, 20, and 70 nm) revealed that the ∅20 nm case is most efficient for absorption saturation, manifesting highest optical modulation depth and lowest interlevel transition rate evaluated. A model to analyze the conditions for absorption saturation and absorption recovery dynamics was developed. Depending on pump intensity the nonmonotonous increase in recovery time for the highest applied values was interpreted as filling up of states at an intermediate energy level. From modeling, important material science parameters, such as concentration of resonant and trapping/recombination states, interlevel transition rate, capture time, characteristic for copper selenide, have been evaluated and compared for different samples. Finally, the consequence of the model to a working copper selenide energy level scheme was considered.

  18. The Short Series of the Oxygen-Poor Lanthanide Oxide Selenides M10OSe14 with M = La–Nd

    Directory of Open Access Journals (Sweden)

    Frank A. Weber

    2012-08-01

    Full Text Available Single crystals and phase pure samples of oxygen-poor ternary lanthanide oxide selenides with the composition M10OSe14 (M = La–Nd; tetragonal, I41/acd; a = 1592.0–1559.8 pm, c = 2106.5–2062.9 pm could be obtained by reacting the corresponding metals, selenium and selenium dioxide as oxygen source. Their crystal structures are isotypic with Pr10OS14 and thus contain isolated [OM4]10+ tetrahedra (d(O2––M3+ = 243–248 pm embedded in a complex anionic {[M6Se14]10–} lanthanide selenide matrix (d(M3+–Se2– = 288–358 pm. All three crystallographically independent M3+ cations exhibit eight contacts to chalcogenide anions (O2– and/or Se2– resulting in the formation of bicapped trigonal prismatic coordination polyhedra. The optical band gaps of the oxide selenides M10OSe14 amount to values between 1.89 and 2.04 eV indicating wide band-gap semiconductors.

  19. Achieving strong doubling power by optical phase-locked Ti:sapphire laser and MOPA system

    Institute of Scientific and Technical Information of China (English)

    Yu Peng; Baike Lin; Qiang Wang; Yang Zhao; Ye Li; Jianping Cao; Zhanjun Fang; Erjun Zang

    2012-01-01

    We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal,whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods.The outputs of second-harmonic generation reach 310 mW,54.8% of the conversion efficiency from the Ti;sapphire laser with the crystal length of 10 mm,and 208 mW,59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm.It consists of heterodyning the Ti;sapphire laser and the MOPA system,and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator.The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti;sapphire laser to lock the two lasers in phase.A stable blue power of 520 mW is obtained,which supplies enough power for the cooling and trapping step of the strontium (Sr) optical lattice clock.Four stable isotopes of Sr,84Sr,86Sr,87Sr,and 88Sr,are detected by probing the laser during a strong 460.7-nm cycling transition (5s21S0-5s5p1P1).%We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal, whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods. The outputs of second-harmonic generation reach 310 mW, 54.8% of the conversion efficiency from the Ti:sapphire laser with the crystal length of 10 mm, and 208 mW, 59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm. It consists of heterodyning the Ti:sapphire laser and the MOPA system, and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator. The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti:sapphire laser to lock the two lasers in phase. A stable blue power of 520 mW is obtained, which supplies enough power for the cooling

  20. Zinc Determination in Pleural Fluid

    OpenAIRE

    Nazan DEMİR; DEMİR, Yaşar

    2000-01-01

    In this study, an enzymatic zinc determination method was applied to pleural fluid, the basis of which was the regaining of the activity of apo carbonic anhydrase by the zinc present in the sample. The method was used for pleural fluid zinc determination in order to show the application to body fluids other than serum. For this purpose, pleural fluids were obtained from 20 patients and zinc concentrations were determined. Carbonic anhydrase was purified by affinity chromatography from bovine ...

  1. The bioavailability of four zinc oxide sources and zinc sulphate in broiler chickens

    NARCIS (Netherlands)

    Veldkamp, T.; Diepen, van J.T.M.; Bikker, P.

    2014-01-01

    Zinc is an essential trace element for all farm animal species. It is commonly included in animal diets as zinc oxide, zinc sulphate or organically bound zinc. Umicore Zinc Chemicals developed zinc oxide products with different mean particle sizes. Umicore Zinc Chemicals requested Wageningen UR

  2. The bioavailability of four zinc oxide sources and zinc sulphate in broiler chickens

    NARCIS (Netherlands)

    Veldkamp, T.; Diepen, van J.T.M.; Bikker, P.

    2014-01-01

    Zinc is an essential trace element for all farm animal species. It is commonly included in animal diets as zinc oxide, zinc sulphate or organically bound zinc. Umicore Zinc Chemicals developed zinc oxide products with different mean particle sizes. Umicore Zinc Chemicals requested Wageningen UR Live

  3. An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Manh Hung; Tian, Liang; Chaker, Ahmad; Cantelli, Valentina; Ouled, Toufik; Boichot, Raphaël; Crisci, Alexandre; Lay, Sabine; Richard, Marie-Ingrid; Thomas, Olivier; Deschanvres, Jean-Luc; Renevier, Hubert; Fong, Dillon D.; Ciatto, Gianluca

    2016-09-07

    The growth of zinc oxide thin films by atomic layer deposition is believed to proceed through an embryonic step in which three-dimensional nanoislands form and then coalesce to trigger a layer-by-layer growth mode. This transient initial state is characterized by a poorly ordered atomic structure, which may be inaccessible by X-ray diffraction techniques. In this work, we apply X-ray absorption spectroscopy in situ to address the local structure of Zn after each atomic layer deposition cycle, using a custom-built reactor mounted at a synchrotron beamline, and we shed light on the atomistic mechanisms taking place during the first stages of the growth. We find that such mechanisms are surprisingly different for zinc oxide growth on amorphous (silica) and crystalline (sapphire) substrate. Ab initio simulations and quantitative data analysis allow the formulation of a comprehensive growth model, based on the different effects of surface atoms and grain boundaries in the nanoscale islands, and the consequent induced local disorder. From a comparison of these specttoscopy results with those from X-ray diffraction reported recently, we observe that the final structure of the zinc oxide nanolayers depends strongly on the mechanisms taking place during the initial stages of growth. The approach followed here for the case of zinc oxide will be of general interest for characterizing and optimizing the growth and properties of more complex nanostructures.

  4. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high- Q factor whispering gallery modes

    Science.gov (United States)

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy

    2010-09-01

    Resonance modes in single crystal sapphire (α-Al2O3) exhibit extremely high electrical and mechanical Q factors ( ≈109 at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T3 dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify “magic temperatures” between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  5. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  6. Environmental risk limits for zinc

    NARCIS (Netherlands)

    Bodar CWM; SEC

    2007-01-01

    Environmental Riks Limits (ERLs) were derived for zinc. ERLs serve as advisory values to set environmental quality standards in the Netherlands. The ERLs for zinc closely follow the outcomes of earlier discussions on zinc within the Water Framework Directive and EC Regulation 793/93. The ERLs refer

  7. Environmental risk limits for zinc

    NARCIS (Netherlands)

    Bodar CWM; SEC

    2007-01-01

    Environmental Riks Limits (ERLs) were derived for zinc. ERLs serve as advisory values to set environmental quality standards in the Netherlands. The ERLs for zinc closely follow the outcomes of earlier discussions on zinc within the Water Framework Directive and EC Regulation 793/93. The ERLs ref

  8. Zinc Phosphide Poisoning

    Directory of Open Access Journals (Sweden)

    Erdal Doğan

    2014-01-01

    Full Text Available Zinc phosphide has been used widely as a rodenticide. Upon ingestion, it gets converted to phosphine gas in the body, which is subsequently absorbed into the bloodstream through the stomach and the intestines and gets captured by the liver and the lungs. Phosphine gas produces various metabolic and nonmetabolic toxic effects. Clinical symptoms are circulatory collapse, hypotension, shock symptoms, myocarditis, pericarditis, acute pulmonary edema, and congestive heart failure. In this case presentation, we aim to present the intensive care process and treatment resistance of a patient who ingested zinc phosphide for suicide purposes.

  9. Erbium-doped crystalline YAG planar and ridge waveguides on quartz and sapphire substrates: deposition and material characterisation

    Science.gov (United States)

    Facchini, G.; Zappettini, A.; Canali, A.; Martinelli, M.; Gabetta, G.; Tallarida, G.

    2001-06-01

    Er-doped Yttrium-Aluminium-Garnet (YAG) planar and ridge waveguides have been grown on quartz and sapphire substrates. The waveguides have been structurally, morphologically and stoichiometrically characterised by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Doping concentrations up to 5% have been successfully demonstrated. Deposition of channel waveguide on sapphire substrate results in a correct ridge shape.

  10. Evaluation of the Quality of Sapphire Using X-Ray Rocking Curves and Double-Crystal X-Ray Topography

    Science.gov (United States)

    1994-05-01

    hard, high-strength, chemically resistant optical windows; and sub- srates for the growth of epitaxial films. The quality of a sapphire crystal can... crystal diffractometer. Single- crystal sapphire may be grown by a variety of different methods, of which the more common are Verneuil (flame fusion...Linear features (L), which may represent slight variations in lattice parameter along the crystal growth front, or dislocation networks, ad small

  11. Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

    Science.gov (United States)

    Yerci, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydinli, A.; Turan, R.

    2006-10-01

    Silicon nanocrystals, average sizes ranging between 3 and 7nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800°C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.

  12. Process for the Φ130 sapphire window element with long distance and high resolution

    Science.gov (United States)

    Xu, Zengqi; Su, Ying; Lei, Jianli; Guo, Rui; Zhang, Feng; Guo, Xinlong; Liu, Xuanmin; Sun, Taohui

    2016-10-01

    With the process test for the choice of materials, the test materials and the molds, the abrasives, the temperature and the different machining process monitoring parameters of the polishing machine, the process method and the quality control technology were figured out for the Φ130 sapphire window element with long distance and high resolution (hereinafter referred to as window element), meantime, the optimum process condition was determined to machine the element. The results were that the high resolution imaging window was processed with the surface roughness Ra of 0.639nm, the transmission distortion of λ/10 (λ=632.8nm), the parallel error of 5″, the resolution of 1.47″ and the focal length of 5 km, which can satisfy the imaging requirements better for the military photoelectric device for sapphire window with long distance and high resolution.

  13. Growth and Characterization of InN Thin Films on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    XIE Zi-Li; ZHANG Rong; XIU Xiang-Qian; LIU Bin; LI Liang; HAN Ping; GU Shu-Lin; SHI Yi; ZHENG You-Dou

    2007-01-01

    Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition(MOCVD).By employing three-step layer buffers,the mirror-like layers on two-inch sapphire wafers have been obtained.The structural,optical and electrical characteristics of InN are investigated by x-ray diffraction,scanning electron microscopy,atomic force microscopy,photoluminescence and infrared optical absorpton.The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70 eV at room temperature.The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm2/Vs,and 3.9×1018cm-3,respectively.

  14. Degradation of picosecond temporal contrast of Ti:sapphire lasers with coherent pedestals.

    Science.gov (United States)

    Khodakovskiy, Nikita; Kalashnikov, Mikhail; Gontier, Emilien; Falcoz, Franck; Paul, Pierre-Mary

    2016-10-01

    Recompressed pulses from Ti:sapphire chirped-pulse lasers are accompanied by a slowly decaying post-pulse pedestal that is coherent with the main pulse. The pedestal typically consists of numerous pulses with temporal separation in the picosecond range. The source of this artifact lies in the Ti:sapphire active medium itself, both in the Kerr-lens mode-locked oscillator and in subsequent amplifiers. In the presence of substantial self-phase modulation, after recompression the post-pedestal generates a mirror-symmetric pre-pulse pedestal. This pedestal severely degrades the leading edge of the output pulse. This degradation is far more limiting than the original post-pedestal and severely lowers the achievable temporal contrast.

  15. Achieving λ/10 resolution CW STED nanoscopy with a Ti:Sapphire oscillator.

    Directory of Open Access Journals (Sweden)

    Yujia Liu

    Full Text Available In this report, a Ti:Sapphire oscillator was utilized to realize synchronization-free stimulated emission depletion (STED microscopy. With pump power of 4.6 W and sample irradiance of 310 mW, we achieved super-resolution as high as 71 nm. With synchronization-free STED, we imaged 200 nm nanospheres as well as all three cytoskeletal elements (microtubules, intermediate filaments, and actin filaments, clearly demonstrating the resolving power of synchronization-free STED over conventional diffraction limited imaging. It also allowed us to discover that, Dylight 650, exhibits improved performance over ATTO647N, a fluorophore frequently used in STED. Furthermore, we applied synchronization-free STED to image fluorescently-labeled intracellular viral RNA granules, which otherwise cannot be differentiated by confocal microscopy. Thanks to the widely available Ti:Sapphire oscillators in multiphoton imaging system, this work suggests easier access to setup super-resolution microscope via the synchronization-free STED.

  16. Characterization of superconducting magnesium-diboride films on glassy carbon and sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, E.; Zavala, E. P. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000 Mexico D. F. (Mexico); Rocha, M. F. [Escuela Superior de Ingenieria Mecanica y Electrica, IPN, Mexico D. F. (Mexico); Jergel, M.; Falcony, C. [Departamento de Fisica, CINVESTAV-IPN, Apartado postal 14-740, 07000 Mexico D. F. (Mexico)

    2008-02-15

    IBA methods were applied to measure elemental depth profiles of precursors and superconducting MgB{sub 2} thin films deposited on glassy carbon (Good Fellows) and sapphire (Al{sub 2}O{sub 3}) substrates. For each type of substrates we obtained a pair of samples i.e. one amorphous precursor and one superconducting film which were then characterized. A 3{sup H}e{sup +} beam was used to bombard both, precursors and superconducting films in order to obtain the samples elemental composition profiles. The zero resistance T{sub co} and the middle of transition T{sub cm} values were 26.0 K and 29.7 K for the MgB{sub 2} film deposited on glassy carbon substrate. In the case of sapphire substrate the T{sub co} and T{sub cm} values were 25.0 K and 27.9 K, respectively. (Author)

  17. Nearly octave-spanning frequency comb generation in AlN-on-sapphire microresonators

    CERN Document Server

    Liu, Xianwen; Xiong, Bing; Wang, Lai; Wang, Jian; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

    2016-01-01

    We report a nearly octave-spanning optical frequency comb generation with a coverage of $\\sim$1000 nm in continuous-wave pumped aluminum nitride (AlN)-on-sapphire microring resonators. Thanks to optimized device design and fabrication process, high-quality-factor AlN microrings with high cavity finesse and low insertion loss are demonstrated. By tailoring the cavity dimension, a broadband anomalous dispersion is secured to facilitate the frequency comb generation. Blue-shifted dispersive wave emission as well as stimulated Raman scattering is observed, which helps extend the comb spectrum coverage. Our work suggests that AlN-on-sapphire can be an appealing platform for integrated nonlinear optics.

  18. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  19. Use of Be(p,{alpha}) and Be(p,d) Reactions to Determine Be Content in Sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Franklyn, C. B. [Radiation Science Department, Necsa, PO Box 582, Pretoria 0001 (South Africa)

    2011-12-13

    Since natural coloured sapphire ({alpha}-Al{sub 2}O{sub 3}) commands a high gem stone market price there is a need for a reliable method of identifying artificially coloured sapphire that has an inherently lower value. Diffusing beryllium into sapphire at high temperatures results in a coloured stone virtually indistinguishable from a natural one. Beryllium can occur naturally in sapphire but at levels of <1 ppma. Beryllium diffused sapphire typically contains >10 ppma, which is difficult to determine in a non destructive way. It is possible to utilize nuclear reaction analysis techniques to determine the beryllium content in a macroscopically non destructive way. Kinematically ideal reactions are Be(p,{alpha}) and Be(p,d) which, for Ep = 0.5 to 0.9 MeV, exhibit distinct reaction product signatures well separated from other proton induced reactions in aluminium or oxygen. Due to the lack of comprehensive cross section data for the Be(p,{alpha}) and Be(p,d) reactions in the energy range of interest, a series of measurements were made at the Van de Graaff accelerator facility at Necsa to create a new data base. A further outcome of these measurements was a deviation in reported values for the non-Rutherfordian proton back-scatter cross section. These new data bases, which extend to Ep = 2.6MeV, can now facilitate a procedure for determining beryllium content in sapphire.

  20. Evaluation of heat extraction through sapphire fibers for the GW observatory KAGRA

    OpenAIRE

    Khalaidovski, Alexander; Hofmann, Gerd; CHEN, DAN; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Allen O.; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka mine. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise. To reduce seismic noise, the mirrors will also be suspended from multi-stage pendulums. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as heat load from thermal radiation will need to be extracted through th...

  1. High energy terahertz pulses from organic crystals: DAST and DSTMS pumped at Ti:sapphire wavelength

    CERN Document Server

    Monoszlai, B; Jazbinsek, M; Hauri, C P

    2013-01-01

    High energy terahertz pulses are produced by optical rectification (OR) in organic crystals DAST and DSTMS by a Ti:sapphire amplifier system centered at 0.8 microns. The simple scheme provides broadband spectra between 1 and 5 THz, when pumped by collimated 60 fs near-infrared pump pulse and it is scalable in energy. Fluence-dependent conversion efficiency and damage threshold are reported as well as optimized OR at visible wavelength.

  2. Silicon-on-Sapphire Waveguides: Mode-converting Couplers and Four-wave Mixing

    Science.gov (United States)

    2014-09-01

    width of the waveguides was between 1600 and 1900 nm . Figure 1 shows gain bands for a waveguide with 500- nm height and 1700 - nm width, demonstrating...1. Calculated conversion efficiency of four-wave mixing in 1700 - nm wide silicon-on-sapphire waveguide. Color bar indicates conversion efficiency in...dominance. Previous investigations show that this spectral range is of interest for applications that include free-space communications, laser radar

  3. ZnO Nanostructures Grown on AlN/Sapphire Substrates by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WEI Hong-Yuan; HU Wei-Guo; ZHANG Pan-Feng; LIU Xiang-Lin; ZHU Qin-Sheng; WANG Zhan-Guo

    2007-01-01

    ZnO nanorods and nanotubes are successful synthesized on AlN/sapphire substrates by metal-organic chemical vapour deposition (MOCVD). The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the A1N under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.

  4. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate.

    Science.gov (United States)

    Dantan, Aurélien; Laurat, Julien; Ourjoumtsev, Alexei; Tualle-Brouri, Rosa; Grangier, Philippe

    2007-07-09

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate.

  5. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  6. A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

    Science.gov (United States)

    Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

    2001-01-01

    A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

  7. High Power Widely Tunable Narrow Linewidth All-Solid-State Pulsed Titanium-Doped Sapphire Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; LI Xue; SHENG Quan; SHI Chun-Peng; YIN Su-Jia; LI Bin; YU Xuan-Yi; WEN Wu-Qi; YAO Jian-Quan

    2011-01-01

    We report a widely tunable, narrow linewidth, pulsed Ti:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser. By using four dense Bint glass prisms as intra-cavity dispersive elements, the output wavelength can be continuously tuned over 675-970 nm and the spectral linewidth is shortened to 0.5nm. The maximum output power of 6.65 W at 780 nm is obtained under 23.4 Wpump power with repetition rate of 5.5 kHz; corresponding to an conversion efficiency of 28.4%. Due to the gain-switching characteristics of the Ti:sapphire laser, the output pulse duration is as short as 17.6ns.%@@ We report a widely tunable,narrow linewidth,pulsed Th:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser.By using four dense flint glass prisms as intra-cavity dispersive elements,the output wavelength can be continuously tuned over 675-970nm and the spectral linewidth is shortened to 0.5 nm.The maximum output power of 6.65 W at 780 run is obtained under 23.4 W pump power with repetition rate of 5.5 kHz,corresponding to an conversion efficiency of 28.4%.Due to the gain-switching characteristics of the Ti:sapphire laser,the output pulse duration is as short as 17.6ns.

  8. Amplified spontaneous emission and its restraint in a terawatt Ti:sapphire amplifier

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Amplified spontaneous emission (ASE) and its restraint in a femtosecond Ti: sapphire chirped_pulse amplifier were investigated. The noises arising from ASE were effectively filtered out in the spatial, temporal and spectral domain. Pulses as short as 38 fs were amplified to peak power of 1.4 TW. The power ratio between the amplified femtosecond pulse and the ASE was higher than 106:1.

  9. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  10. Milli-electronvolt monochromatization of hard X-rays with a sapphire backscattering monochromator

    Science.gov (United States)

    Sergueev, I.; Wille, H.-C.; Hermann, R. P.; Bessas, D.; Shvyd’ko, Yu. V.; Zając, M.; Rüffer, R.

    2011-01-01

    A sapphire backscattering monochromator with 1.1 (1) meV bandwidth for hard X-rays (20–40 keV) is reported. The optical quality of several sapphire crystals has been studied and the best crystal was chosen to work as the monochromator. The small energy bandwidth has been obtained by decreasing the crystal volume impinged upon by the beam and by choosing the crystal part with the best quality. The monochromator was tested at the energies of the nuclear resonances of 121Sb at 37.13 keV, 125Te at 35.49 keV, 119Sn at 23.88 keV, 149Sm at 22.50 keV and 151Eu at 21.54 keV. For each energy, specific reflections with sapphire temperatures in the 150–300 K region were chosen. Applications to nuclear inelastic scattering with these isotopes are demonstrated. PMID:21862862

  11. Growth of p-CdTe thin films on n-GaN/sapphire

    Science.gov (United States)

    Jung, Younghun; Chun, Seunju; Kim, Donghwan; Kim, Jihyun

    2011-07-01

    CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl 2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl 2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

  12. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  13. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  14. Preparation, properties and application of sapphire single-crystal fibers grown by the EFG method

    Directory of Open Access Journals (Sweden)

    Kubát J.

    2013-05-01

    Full Text Available Sapphire – the single crystal of aluminum oxide (Al2O3 – is one of the most important artificially produced materials. The sapphire fibres studied were grown in Crytur using the “edge-defined film-fed growth” (EFG technique. Their unique physical and chemical properties can be employed in various applications. Due to their high refractive index and a broad transmission band spanning the ultraviolet, visible and infrared bands, sapphire fibres are perfect waveguides in harsh environments. The current major applications are Er:YAG laser beam delivery and pyrometric and spectrometric measurements in furnaces, combustion engines, etc. In this paper we summarize an adjustment of the EFG method to grow thin filaments by giving possible molybdenum die designs. We investigated the fibres using an optical microscope and measured their transmission of an Er:YAG laser beam (2.94 μm. The attenuation of the tested samples is approximately 0.1 dB/cm.

  15. Layered MoS{sub 2} grown on c-sapphire by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Yen-Teng; Ma, Chun-Hao; Luong, Tien-Tung; Wei, Lin-Lung; Yen, Tzu-Chun; Chu, Yung-Ching; Tu, Yung-Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Hsu, Wei-Ting; Chang, Wen-Hao [Department of Electrophysics, National Chiao Tung University, Hsinchu (China); Pande, Krishna Prasad [Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu (China); Chang, Edward Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu (China)

    2015-03-01

    Layered growth of molybdenum disulphide (MoS{sub 2}) was successfully achieved by pulsed laser deposition (PLD) method on c -plane sapphire substrate. Growth of monolayer to a few monolayer MoS{sub 2}, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A{sub 1g}-E{sup 1}{sub 2g}) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm{sup -1}, suggesting a monolayer MoS{sub 2} was obtained. Two-dimensional (2D) layer growth of MoS{sub 2} is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002)MoS{sub 2} and [2 anti 1 anti 10] sapphire//[0 anti 1 anti 10]MoS{sub 2} is determined. The results imply that PLD is suitable for layered MoS{sub 2} growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS{sub 2}, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  17. Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Tang Jun; Kang Chao-Yang; Li Li-Min; Liu Zhong-Liang; Yan Wen-Sheng; Wei Shi-Qiang; Xu Peng-Shou

    2012-01-01

    A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy(SSMBE)equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction(RHEED),X-ray diffractionφ scans,Raman spectroscopy,and near edge X-ray absorption fine structure(NEXAFS)spectroscopy.The results of the RHEED and φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 mm.

  18. Doped zinc oxide microspheres

    Science.gov (United States)

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  19. Zinc in multiple sclerosis

    DEFF Research Database (Denmark)

    Bredholt, Mikkel; Fredriksen, Jette Lautrup

    2016-01-01

    In the last 35 years, zinc (Zn) has been examined for its potential role in the disease multiple sclerosis (MS). This review gives an overview of the possible role of Zn in the pathogenesis of MS as well as a meta-analysis of studies having measured Zn in serum or plasma in patients with MS...

  20. Creep Resistant Zinc Alloy

    Energy Technology Data Exchange (ETDEWEB)

    Frank E. Goodwin

    2002-12-31

    This report covers the development of Hot Chamber Die Castable Zinc Alloys with High Creep Strengths. This project commenced in 2000, with the primary objective of developing a hot chamber zinc die-casting alloy, capable of satisfactory service at 140 C. The core objectives of the development program were to: (1) fill in missing alloy data areas and develop a more complete empirical model of the influence of alloy composition on creep strength and other selected properties, and (2) based on the results from this model, examine promising alloy composition areas, for further development and for meeting the property combination targets, with the view to designing an optimized alloy composition. The target properties identified by ILZRO for an improved creep resistant zinc die-casting alloy were identified as follows: (1) temperature capability of 1470 C; (2) creep stress of 31 MPa (4500 psi); (3) exposure time of 1000 hours; and (4) maximum creep elongation under these conditions of 1%. The project was broadly divided into three tasks: (1) Task 1--General and Modeling, covering Experimental design of a first batch of alloys, alloy preparation and characterization. (2) Task 2--Refinement and Optimization, covering Experimental design of a second batch of alloys. (3) Task 3--Creep Testing and Technology transfer, covering the finalization of testing and the transfer of technology to the Zinc industry should have at least one improved alloy result from this work.

  1. Creep Resistant Zinc Alloy

    Energy Technology Data Exchange (ETDEWEB)

    Frank E. Goodwin

    2002-12-31

    This report covers the development of Hot Chamber Die Castable Zinc Alloys with High Creep Strengths. This project commenced in 2000, with the primary objective of developing a hot chamber zinc die-casting alloy, capable of satisfactory service at 140 C. The core objectives of the development program were to: (1) fill in missing alloy data areas and develop a more complete empirical model of the influence of alloy composition on creep strength and other selected properties, and (2) based on the results from this model, examine promising alloy composition areas, for further development and for meeting the property combination targets, with the view to designing an optimized alloy composition. The target properties identified by ILZRO for an improved creep resistant zinc die-casting alloy were identified as follows: (1) temperature capability of 1470 C; (2) creep stress of 31 MPa (4500 psi); (3) exposure time of 1000 hours; and (4) maximum creep elongation under these conditions of 1%. The project was broadly divided into three tasks: (1) Task 1--General and Modeling, covering Experimental design of a first batch of alloys, alloy preparation and characterization. (2) Task 2--Refinement and Optimization, covering Experimental design of a second batch of alloys. (3) Task 3--Creep Testing and Technology transfer, covering the finalization of testing and the transfer of technology to the Zinc industry should have at least one improved alloy result from this work.

  2. Zinc in Multiple Sclerosis

    DEFF Research Database (Denmark)

    Bredholt, Mikkel; Frederiksen, Jette Lautrup

    2016-01-01

    In the last 35 years, zinc (Zn) has been examined for its potential role in the disease multiple sclerosis (MS). This review gives an overview of the possible role of Zn in the pathogenesis of MS as well as a meta-analysis of studies having measured Zn in serum or plasma in patients with MS...

  3. Studies on nanocrystalline zinc coating

    Indian Academy of Sciences (India)

    H B Muralidhara; Y Arthoba Naik

    2008-08-01

    Nano zinc coatings were deposited on mild steel by electrodeposition. The effect of additive on the morphology of crystal size on zinc deposit surface and corrosion properties were investigated. Corrosion tests were performed for dull zinc deposits and bright zinc deposits in aqueous NaCl solution (3.5 wt.%) using electrochemical measurements. The results showed that addition of additive in the deposition process of zinc significantly increased the corrosion resistance. The surface morphology of the zinc deposits was studied by scanning electron microscopy (SEM). The preferred orientation and average size of the zinc electrodeposited particles were obtained by X-ray diffraction analysis. The particles size was also characterized by TEM analysis.

  4. Effects of residual copper selenide on CuInGaSe 2 solar cells

    Science.gov (United States)

    Hsieh, Tung-Po; Chuang, Chia-Chih; Wu, Chung-Shin; Chang, Jen-Chuan; Guo, Jhe-Wei; Chen, Wei-Chien

    2011-02-01

    Large-grain, copper-poor CuInGaSe2 (CIGS) films are favored in the fabrication of highly efficient solar cells. However, the degradation of cell performance caused by residual copper selenide (Cu2-xSe) remains a problem. This work studies the formation and behavior of excess CuxSe and further compares the cell performance of typical copper-poor with that of copper-rich solar cells. Since excess Cu2-xSe cannot be exhausted during the growth, it fully surrounds the polycrystalline CIGS grains. Excess Cu2-xSe in the CIGS film produces serious shunt paths and causes the pn junction to be of poor quality. A short circuit in copper-rich CIGS solar cells is attributable to the conductive Cu2-xSe. The best way to ensure high-efficiency of the cells is to exhaust Cu2-xSe during growth. Otherwise, a dense, chemically treated CIGS film is required to prevent the negative effects of excess Cu2-xSe.

  5. Electrochemical synthesis and optical characterization of copper selenide nanowire arrays within the alumina pores

    Science.gov (United States)

    Jagminas, A.; Juškėnas, R.; Gailiūtė, I.; Statkutė, G.; Tomašiūnas, R.

    2006-09-01

    By choosing an appropriate aqueous solution containing CuSO 4, H 2SeO 3, MgSO 4, and H 2SO 4 the suitable composition for two- or one-phase copper selenide deposition within the alumina pores under alternating current (AC) electrolysis conditions was created. X-ray diffraction spectra recorded within 15-55° 2 Θ range revealed fabrication of Cu 3Se 2+Cu 2-xSe or almost pure Cu 2-xSe crystalline material. The compositional and morphological studies using XRD, EDX, SEM, and TEM techniques show fabrication of nearly pure Cu 2-xSe with some deficiency of copper, say, Cu 1.75Se, nanowires in length up to several microns when the selenious acid to copper-ion ratio is close to 1:2 and pH of the bath is <1.25. The fundamental absorption spectrum for this nanostructured material was shown to be formed by allowed direct and indirect interband transitions with the evaluated energy band gaps 2.3 and 1.1 eV, respectively.

  6. Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics

    KAUST Repository

    Yuan, Zhongcheng

    2015-11-01

    Abstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.

  7. DFT Study on the Carrier Concentration and Temperature-Dependent Thermoelectric Properties of Antimony Selenide

    Directory of Open Access Journals (Sweden)

    Aditya Jayaraman

    2016-01-01

    Full Text Available We present the thermoelectric properties of Antimony Selenide (Sb2Se3 obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Thermoelectric properties were calculated using BoltzTrap code using the constant relaxation time (τ approximation at three different temperatures 300 K, 600 K, and 800 K. Seebeck coefficient (S was found to decrease with increasing temperature, electrical conductivity (σ/τ was almost constant in the entire temperature range, and electronic thermal conductivity (κ/τ increased with increasing temperature. With increase in temperature S decreased from 1870 μV/K (at 300 K to 719 μV/K (at 800 K, electronic thermal conductivity increased from 1.56 × 1015 W/m K s (at 300 K to 3.92 × 1015 W/m K s (at 800 K, and electrical conductivity decreased from 22 × 1019/Ω m s (at 300 K to 20 × 1019/Ω m s (at 800 K. The thermoelectric properties were also calculated for different hole concentrations and the optimum concentration for a good thermoelectric performance over a large range of temperatures (from 300 K to 1000 K was found for hole concentration around 1019 cm−3.

  8. Ultrafast charge- and energy-transfer dynamics in conjugated polymer: cadmium selenide nanocrystal blends.

    Science.gov (United States)

    Morgenstern, Frederik S F; Rao, Akshay; Böhm, Marcus L; Kist, René J P; Vaynzof, Yana; Greenham, Neil C

    2014-02-25

    Hybrid nanocrystal-polymer systems are promising candidates for photovoltaic applications, but the processes controlling charge generation are poorly understood. Here, we disentangle the energy- and charge-transfer processes occurring in a model system based on blends of cadmium selenide nanocrystals (CdSe-NC) with poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MDMO-PPV) using a combination of time-resolved absorption and luminescence measurements. The use of different capping ligands (n-butylamine, oleic acid) as well as thermal annealing allows tuning of the polymer-nanocrystal interaction. We demonstrate that energy transfer from MDMO-PPV to CdSe-NCs is the dominant exciton quenching mechanism in nonannealed blends and occurs on ultrafast time scales (<1 ps). Upon thermal annealing electron transfer becomes competitive with energy transfer, with a transfer rate of 800 fs independent of the choice of the ligand. Interestingly, we find hole transfer to be much less efficient than electron transfer and to extend over several nanoseconds. Our results emphasize the importance of tuning the organic-nanocrystal interaction to achieve efficient charge separation and highlight the unfavorable hole-transfer dynamics in these blends.

  9. Synthesis and optoelectrical properties of f-graphene/cadmium selenide hybrid system

    Science.gov (United States)

    Babkair, Saeed Salem; Azam, Ameer; Singh, Kuldeep; Dhawan, Sundeep Kumar; Khan, Mohd Taukeer

    2015-01-01

    The present work demonstrates the synthesis of a hybrid accepter material containing amino-functionalized graphene oxide (GO) and an inorganic semiconducting material, cadmium selenide (CdSe). First, amino-functionalized graphene was synthesized and then nanocrystals (NCs) of CdSe were in situ grown in the functionalized-(GO) matrix named f-GCdSe. Structural studies such as x-ray diffraction, and a scanning electron microscopic were employed to investigate the growth of CdSe NCs in the graphene matrix. To understand the charge generation and transfer process at the donor/acceptor interface, the absorption, photoluminescence (PL), and transient absorption spectroscopic (TAS) studies have been carried out in poly(3-hexylthiophene) (P3HT)/f-GCdSe thin films. PL quenching in P3HT/f-GCdSe thin film suggests that charge transfer takes place at the donor/acceptor interface. TAS shows higher optical density and long lived free carriers for P3HT/f-GCdSe thin film. These results suggest that f-GCdSe is an excellent electron-acceptor material for organic photovoltaic devices.

  10. Photoluminescence properties of cadmium-selenide quantum dots embedded in a liquid-crystal polymer matrix

    Energy Technology Data Exchange (ETDEWEB)

    Tselikov, G. I., E-mail: gleb@vega.phys.msu.ru; Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation); Plenge, J.; Ruehl, E. [Free University of Berlin, Institute of Chemistry and Biochemistry (Germany); Shatalova, A. M.; Shandryuk, G. A.; Merekalov, A. S.; Tal' roze, R. V. [Russian Academy of Sciences, Topchiev Institute of Petrochemical Synthesis (Russian Federation)

    2013-05-15

    The photoluminescence properties of cadmium-selenide (CdSe) quantum dots with an average size of {approx}3 nm, embedded in a liquid-crystal polymer matrix are studied. It was found that an increase in the quantum-dot concentration results in modification of the intrinsic (exciton) photoluminescence spectrum in the range 500-600 nm and a nonmonotonic change in its intensity. Time-resolved measurements show the biexponential decay of the photoluminescence intensity with various ratios of fast and slow components depending on the quantum-dot concentration. In this case, the characteristic lifetimes of exciton photoluminescence are 5-10 and 35-50 ns for the fast and slow components, respectively, which is much shorter than the times for colloidal CdSe quantum dots of the same size. The observed features of the photoluminescence spectra and kinetics are explained by the effects of light reabsorption, energy transfer from quantum dots to the liquid-crystal polymer matrix, and the effect of the electronic states at the CdSe/(liquid crystal) interface.

  11. New route for preparation of luminescent mercaptoethanoate capped cadmium selenide quantum dots

    Indian Academy of Sciences (India)

    Manoj E Wankhede; Shaukatali N Inamdar; Aparna Deshpande; Aniket R Thete; Renu Pasricha; Sulabha K Kulkarni; Santosh K Haram

    2008-06-01

    We report a synthesis of cadmium selenide quantum dots (Q-CdSe) by refluxing a mixture of cadmium acetate, selenium powder, sodium sulfite and 2-mercaptoethanol in N,N′-dimethyl formamide (DMF)/water solution. X-ray and electron diffractions suggest the formation of hexagonal phase of size quantized CdSe. Based on TEM analysis, the formation of nanoparticles with an average diameter of 3.5 ± 0.5 nm is inferred. Their sols in DMF and dimethyl sulphoxide (DMSO) gave characteristic absorption peaks at 300 nm and 327 nm, which is attributed to the formation of high quality, size quantized CdSe particles. Extracted particles from the sol were readily redispersed in DMF and DMSO, which were diluted further with water without losing their optical and colloidal properties. FTIR spectroscopy suggested the formation of 2-mercaptoethanol thiolate on the particle surface, with free –OH groups available for linkage. Sols in DMSO and their solutions in water displayed an intense photoluminescence (PL).

  12. Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

    Science.gov (United States)

    Bercegol, Adrien; Chacko, Binoy; Klenk, Reiner; Lauermann, Iver; Lux-Steiner, Martha Ch.; Liero, Matthias

    2016-04-01

    For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conduction band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.

  13. Topological insulator bismuth selenide as a theranostic platform for simultaneous cancer imaging and therapy

    Science.gov (United States)

    Li, Juan; Jiang, Fei; Yang, Bo; Song, Xiao-Rong; Liu, Yan; Yang, Huang-Hao; Cao, Dai-Rong; Shi, Wen-Rong; Chen, Guo-Nan

    2013-06-01

    Employing theranostic nanoparticles, which combine both therapeutic and diagnostic capabilities in one dose, has promise to propel the biomedical field toward personalized medicine. Here we investigate the theranostic properties of topological insulator bismuth selenide (Bi2Se3) in in vivo and in vitro system for the first time. We show that Bi2Se3 nanoplates can absorb near-infrared (NIR) laser light and effectively convert laser energy into heat. Such photothermal conversion property may be due to the unique physical properties of topological insulators. Furthermore, localized and irreversible photothermal ablation of tumors in the mouse model is successfully achieved by using Bi2Se3 nanoplates and NIR laser irradiation. In addition, we also demonstrate that Bi2Se3 nanoplates exhibit strong X-ray attenuation and can be utilized for enhanced X-ray computed tomography imaging of tumor tissue in vivo. This study highlights Bi2Se3 nanoplates could serve as a promising platform for cancer diagnosis and therapy.

  14. Multifunctional Bismuth Selenide Nanocomposites for Antitumor Thermo-Chemotherapy and Imaging.

    Science.gov (United States)

    Li, Zhenglin; Hu, Ying; Howard, Kenneth A; Jiang, Tingting; Fan, Xuelei; Miao, Zhaohua; Sun, Ye; Besenbacher, Flemming; Yu, Miao

    2016-01-26

    To integrate real-time monitoring and therapeutic functions into a single nanoagent, we have designed and synthesized a drug-delivery platform based on a polydopamine(PDA)/human serum albumin (HSA)/doxorubicin (DOX) coated bismuth selenide (Bi2Se3) nanoparticle (NP). The resultant product exhibits high stability and biocompatibility both in vitro and in vivo. In addition to the excellent capability for both X-ray computed tomography (CT) and infrared thermal imaging, the NPs possess strong near-infrared (NIR) absorbance, and high capability and stability of photothermal conversion for efficient photothermal therapy (PTT) applications. Furthermore, a bimodal on-demand pH/photothermal-sensitive drug release has been achieved, resulting in a significant chemotherapeutic effect. Most importantly, the tumor-growth inhibition ratio achieved from thermo-chemotherapy of the Bi2Se3@PDA/DOX/HSA NPs was 92.6%, in comparison to the chemotherapy (27.8%) or PTT (73.6%) alone, showing a superior synergistic therapeutic effect. In addition, there is no noticeable toxicity induced by the NPs in vivo. This multifunctional platform is, therefore, promising for effective, safe and precise antitumor treatment and may stimulate interest in further exploration of drug loading on Bi2Se3 and other competent PTT agents combined with in situ imaging for biomedical applications.

  15. Influence of different deposition potential on the structural and optical properties of copper selenide nanowires

    Science.gov (United States)

    Kaur, Harmanmeet; Kaur, Jaskiran; Singh, Lakhwant

    2016-09-01

    In this paper, nanowires were successfully fabricated from the aqueous solution containing 0.2 M/l CuSO4.5H2O, 0.1 M/l SeO2, 1 g/l PVP and a few drops of H2SO4 in Milli-Q water using electrodeposition technique at room temperature. Influence of different deposition potential on structural and optical properties of copper selenide nanowires has been investigated here. Morphological, structural and optical properties were monitored through field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD) and UV-visible 1800 spectrophotometer. From the XRD analysis, it was found that the stoichiometric (CuSe) nanowires are formed at deposition potential (-0.6 V) and (+0.6 V). Band gap of nanowires were found to be maximum around 3.13 eV for deposition potential (-0.8 V) and minimum of 2.81 eV for deposition potential (-0.6 V).

  16. Femtosecond Transient Absorption Studies in Cadmium Selenide Nanocrystal Thin Films Prepared by Chemical Bath Deposition Method

    Directory of Open Access Journals (Sweden)

    M. C. Rath

    2007-01-01

    Full Text Available Dynamics of photo-excited carrier relaxation processes in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method have been studied by nondegenerate femtosecond transient pump-probe spectroscopy. The carriers were generated by exciting at 400 nm laser light and monitored by several other wavelengths. The induced absorption followed by a fast bleach recovery observed near and above the bandgap indicates that the photo-excited carriers (electrons are first trapped by the available traps and then the trapped electrons absorb the probe light to show a delayed absorption process. The transient decay kinetics was found to be multiexponential in nature. The short time constant, <1 picosecond, was attributed to the trapping of electrons by the surface and/or deep traps and the long time constant, ≥20 picoseconds, was due to the recombination of the trapped carriers. A very little difference in the relaxation processes was observed in the samples prepared at bath temperatures from 25∘C to 60∘C.

  17. A transparent nickel selenide counter electrode for high efficient dye-sensitized solar cells

    Science.gov (United States)

    Dong, Jia; Wu, Jihuai; Jia, Jinbiao; Ge, Jinhua; Bao, Quanlin; Wang, Chaotao; Fan, Leqing

    2017-04-01

    Nickel selenide (Ni0.85Se) was synthesized by a facile one-step hydrothermal reaction and Ni0.85Se film was prepared by spin-coating Ni0.85Se ink on FTO and used as counter electrode (CE) in dye-sensitized solar cells (DSSC). The Ni0.85Se CEs not only show high transmittance in visible range, but also possess remarkable electrocatalytic activity toward I-/I3-. The electrocatalytic ability of Ni0.85Se films was verified by cyclic voltammetry, electrochemical impedance spectroscopy and Tafel polarization curves. The DSSC using Ni0.85Se CE exhibits a power conversion efficiency (PCE) of 8.96%, while the DSSC consisting of sputtered Pt CE only exhibits a PCE of 8.15%. When adding a mirror under Ni0.85Se CE, the resultant DSSC exhibits a PCE of 10.76%, which exceeds that of a DSSC based on sputtered Pt CE (8.44%) by 27.49%.

  18. Liquid-like cationic sub-lattice in copper selenide clusters

    Science.gov (United States)

    White, Sarah L.; Banerjee, Progna; Jain, Prashant K.

    2017-02-01

    Super-ionic solids, which exhibit ion mobilities as high as those in liquids or molten salts, have been employed as solid-state electrolytes in batteries, improved thermoelectrics and fast-ion conductors in super-capacitors and fuel cells. Fast-ion transport in many of these solids is supported by a disordered, `liquid-like' sub-lattice of cations mobile within a rigid anionic sub-lattice, often achieved at high temperatures or pressures via a phase transition. Here we show that ultrasmall clusters of copper selenide exhibit a disordered cationic sub-lattice under ambient conditions unlike larger nanocrystals, where Cu+ ions and vacancies form an ordered super-structure similar to the bulk solid. The clusters exhibit an unusual cationic sub-lattice arrangement wherein octahedral sites, which serve as bridges for cation migration, are stabilized by compressive strain. The room-temperature liquid-like nature of the Cu+ sub-lattice combined with the actively tunable plasmonic properties of the Cu2Se clusters make them suitable as fast electro-optic switches.

  19. Effect of aluminum and tellurium tetrachloride addition on the loss of arsenic selenide optical fiber

    Science.gov (United States)

    Nguyen, Vinh Q.; Drake, Gryphon; Villalobos, Guillermo; Gibson, Daniel; Bayya, Shyam; Kim, Woohong; Baker, Colin; Chin, Geoff; Kung, Frederic H.; Kotov, Mikhail I.; Busse, Lynda; Sanghera, Jasbinder S.

    2017-02-01

    Arsenic selenide glass optical fibers typically possess extrinsic absorption bands in the infrared wavelength regions associated with residual hydrogen and oxygen related impurities, despite using 6N purified elemental precursors. Consequently, special additives and refined processing steps are utilized in an attempt to reduce these and other impurities. We investigate the formation of particulate impurities during a purification process based on the addition of 0.1 wt% elemental aluminum (Al) and 0.2 wt% tellurium tetrachloride (TeCl4) during glass synthesis. It was found that during purification and melting steps, Al reacts with TeCl4 to form AlCl3, which in turn reacts with oxygen and hydrogen impurities and the fused quartz (SiO2) ampoule to produce HCl and stable submicron Al2SiO5 compounds in the As-Se glass and fibers. The intensity of the H-Se absorption band centered at 4.57 μm has been significantly reduced from 18 dB/m to 0.8 dB/m. Using thermodynamic data, we have identified stable Al2SiO5 submicron inclusions in the glass and fibers. A two-step gettering process is proposed as a solution to eliminating these inclusions.

  20. Photoluminescence properties of lead selenide produced by selenization and a solvothermal method

    Science.gov (United States)

    Kim, Jungdong; Ahn, Hak-Young; Kim, Seung Gi; Oh, Eunsoon; Ju, Byeong-Kwon; Choi, Won Jun; Cho, So-Hye

    2017-01-01

    We studied temperature-dependent photoluminescence (PL) spectra of lead selenide (PbSe) dendrites and cubes grown by a solvothermal method. Their PL peaks were located at ˜8 μm at 10 K with a full width at half maximum (FWHM) of 10 meV. Using the temperature-dependent FWHM values, we obtained carrier-phonon coupling coefficients for PbSe. We also demonstrated mechanochemical synthesis of polycrystalline PbS nanoparticles and their successful conversion into a PbSe layer composed of nanocrystals by a selenization process with thermal treatment. The nanocrystals were found to be formed by the orientation alignment of small grains in the process. The PL peak energies of the PbSe layers as well as the PbSe dendrites and the cubes agreed well with their absorption edges in the transmission spectra, indicating that the photoluminescence originates from the band-edge emission. The band-edge emissions hold promise for the development of potential mid-infrared light sources using PbSe fabricated by these methods.

  1. Bilayer Bismuth Selenide nanoplatelets based saturable absorber for ultra-short pulse generation (Invited)

    Science.gov (United States)

    Xu, Yanhua; Xie, Hanhan; Jiang, Guobao; Miao, Lili; Wang, Ke; Tang, Siying; Yu, Xuefeng; Zhang, Han; Bao, Qiaoliang

    2017-07-01

    Based on an efficient and bottom-up synthesis technique, Bismuth Selenide (Bi2Se3) nanoplatelets with uniform morphology and average thickness down to 3-7 nm had been fabricated. Its nonlinear absorption property under high power excitation had been well characterized by our Z-scan measurement system at different illumination wavelengths, and we found that the as-fabricated bi-layer Bi2Se3 nanoplatelets show unique nonlinear optical responses, that is, with a saturable optical intensity of 32 GW/cm2 (resp. 3.7 MW/cm2) and a modulation depth of 88% (resp. 36%) at 800 nm (resp. 1565 nm). By implementing its saturable absorption property, we designed an optical saturable absorber device based on bilayer Bi2Se3 nanoplatelets through deposited them onto the end-facet of optical fiber. The as-fabricated optical saturable absorber device allows for the generation of mode-locking pulses at 1571 nm with pulse duration of 579 fs and a repetition rate of 12.54 MHz at a pump power of 160 mW. The method on fabricating ultrathin Bi2Se3 nanoplatelets may pave a new way to massive production of large-area topological insulator thin films that can be used in two-dimensional layered materials related photonics device.

  2. Synthesis of Co-Electrospun Lead Selenide Nanostructures within Anatase Titania Nanotubes for Advanced Photovoltaics

    Directory of Open Access Journals (Sweden)

    Evan K. Wujcik

    2015-06-01

    Full Text Available Inorganic nano-scale heterostructures have many advantages over hybrid organic-inorganic dye-sensitized solar cells (DSSC or Grätzel cells, including their resistance to photo-bleaching, thermal stability, large specific surface areas, and general robustness. This study presents a first-of-its-kind low-cost all-inorganic lead selenide-anatase titania (PbSe/TiO2 nanotube heterostructure material for photovoltaic applications. Herein, PbSe nanostructures have been co-electrospun within a hollow TiO2 nanotube with high connectivity for highly efficient charge carrier flow and electron-hole pair separation. This material has been characterized by transmission electron microscopy (TEM, electron diffraction, energy dispersive X-ray spectroscopy (EDX to show the morphology and material composition of the synthesized nanocomposite. Photovoltaic characterization has shown this newly synthesized proof-of-concept material can easily produce a photocurrent under solar illumination, and, with further refinement, could reveal a new direction in photovoltaic materials.

  3. Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

    Directory of Open Access Journals (Sweden)

    Dimitra N. Papadimitriou

    2016-11-01

    Full Text Available High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO were successively electrodeposited in the form of columnar structures preferentially oriented along the ( 10 1 ¯ 1 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO32 at negative electrochemical potential of EC = (−0.8–(−1.2 V and moderate temperature of 80 °C on gallium rich (30% Ga chalcopyrite selenide Cu(In,GaSe2 (CIGS with chemically deposited ZnSe buffer (ZnSe/Cu(In,GaSe2/Mo/glass. The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ ~10−5 Ω·cm; the respective carrier concentration of the order 1022 cm−3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N2 flux regulation. The hydrostatic compressive strain due to Al3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl3 dopant was εh = −0.046 and the respective stress σh = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180–900 nm and the (optical band gap of Eg = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD Al:ZnO bilayers.

  4. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  5. DFT studies on structural properties and electron density topologies of the iron selenides Fe m Se n (1 ≤ m, n ≤ 4)

    Science.gov (United States)

    Zhang, Jian; Liu, Jianhong

    2016-12-01

    We report the structural properties and electron density topologies of the iron selenides Fe m Se n (1 ≤ m, n ≤ 4) using DFT method. Structural studies reveal the Se atom leads to significant change in the geometries of the iron selenides. We confirm that the bond length between Fe atoms increase owing to the sequential addition of Se atom. Comparable stabilities were investigated based on the variation of averaged binding energies and selenium doping energy. The covalent property of the Fe-Se bond is increased as the coincident bond critical points (BCPs) showed smaller positive nabla _{{ρ _{BCP}}}^2 values than those of original FeSe molecule. Our results demonstrate that the ρFe-Fe values keep in the order of 0.048-0.220 a.u. Almost all of the nabla _{{ρ _{BCP}}}^2 values are positive and consequently mean the closed-shell interactions are conserved in the iron selenides.

  6. Interaction Between Yeasts and Zinc

    Science.gov (United States)

    Nicola, Raffaele De; Walker, Graeme

    Zinc is an essential trace element in biological systems. For example, it acts as a cellular membrane stabiliser, plays a critical role in gene expression and genome modification and activates nearly 300 enzymes, including alcohol dehydrogenase. The present chapter will be focused on the influence of zinc on cell physiology of industrial yeast strains of Saccharomyces cerevisiae, with special regard to the uptake and subsequent utilisation of this metal. Zinc uptake by yeast is metabolism-dependent, with most of the available zinc translocated very quickly into the vacuole. At cell division, zinc is distributed from mother to daughter cells and this effectively lowers the individual cellular zinc concentration, which may become zinc depleted at the onset of the fermentation. Zinc influences yeast fermentative performance and examples will be provided relating to brewing and wine fermentations. Industrial yeasts are subjected to several stresses that may impair fermentation performance. Such stresses may also impact on yeast cell zinc homeostasis. This chapter will discuss the practical implications for the correct management of zinc bioavailability for yeast-based biotechnologies aimed at improving yeast growth, viability, fermentation performance and resistance to environmental stresses

  7. Zinc homeostasis and neurodegenerative disorders

    Directory of Open Access Journals (Sweden)

    Bernadeta eSzewczyk

    2013-07-01

    Full Text Available Zinc is an essential trace element, whose importance to the function of the central nervous system (CNS is increasingly being appreciated. Alterations in zinc dyshomeostasis has been suggested as a key factor in the development of several neuropsychiatric disorders. In the CNS, zinc occurs in two forms: the first being tightly bound to proteins and, secondly, the free, cytoplasmic or extracellular form found in presynaptic vesicles. Under normal conditions, zinc released from the synaptic vesicles modulates both ionotropic and metabotropic post-synaptic receptors. While under clinical conditions such as traumatic brain injury, stroke or epilepsy, the excess influx of zinc into neurons has been found to result in neurotoxicity and damage to postsynaptic neurons. On the other hand, a growing body of evidence suggests that a deficiency, rather than an excess, of zinc leads to an increased risk for the development of neurological disorders. Indeed, zinc deficiency has been shown to affect neurogenesis and increase neuronal apoptosis, which can lead to learning and memory deficits. Altered zinc homeostasis is also suggested as a risk factor for depression, Alzheimer’s disease, aging and other neurodegenerative disorders. Under normal CNS physiology, homeostatic controls are put in place to avoid the accumulation of excess zinc or its deficiency. This cellular zinc homeostasis results from the actions of a coordinated regulation effected by different proteins involved in the uptake, excretion and intracellular storage/trafficking of zinc. These proteins include membranous transporters (ZnT and Zip and metallothioneins (MT which control intracellular zinc levels. Interestingly, alterations in ZnT and MT have been recently reported in both aging and Alzheimer’s disease. This paper provides an overview of both clinical and experimental evidence that implicates a dysfunction in zinc homeostasis in the pathophysiology of depression, Alzheimer

  8. Pinacol Coupling Reactions Catalyzed by Active Zinc

    Institute of Scientific and Technical Information of China (English)

    Hui ZHAO; Wei DENG; Qing Xiang GUO

    2005-01-01

    Pinacol coupling reactions catalyzed by active zinc revealed high activity and extensive suitability. The efficiency of the reaction was improved apparently owing to decreasing reductive potential of zinc. In addition, the results indicated that the zinc activity has a direct relation to the coupling reactivity compared to untreated zinc or other general active zinc.

  9. DMPD: Zinc in human health: effect of zinc on immune cells. [Dynamic Macrophage Pathway CSML Database

    Lifescience Database Archive (English)

    Full Text Available 18385818 Zinc in human health: effect of zinc on immune cells. Prasad AS. Mol Med. ...2008 May-Jun;14(5-6):353-7. (.png) (.svg) (.html) (.csml) Show Zinc in human health: effect of zinc on immun...e cells. PubmedID 18385818 Title Zinc in human health: effect of zinc on immune cells. Authors Prasad AS. Pu

  10. The influence of ligand type on self-organization and optical properties of cadmium selenide quantum dots

    Science.gov (United States)

    Ushakova, E. V.; Kormilina, T. K.; Burkova, M. A.; Cherevkov, S. A.; Zakharov, V. V.; Turkov, V. K.; Fedorov, A. V.; Baranov, A. V.

    2017-01-01

    A method for successive replacement of organic shells of colloidal cadmium selenide quantum dots (QDs) of different sizes is proposed. It is found that the spectral parameters of QD samples depend on the type of organic shells. It is shown that the structural morphology is independent of the QD size and is determined by the chemical composition of the organic shell. Spectral analysis of the luminescence of QD-based superstructures shows that the luminescence wavelength and intensity strongly depend on the degree of QD surface passivation.

  11. Laser Photolysis and Thermolysis of Organic Selenides and Tellurides for Chemical Gas-phase Deposition of Nanostructured Materials

    Directory of Open Access Journals (Sweden)

    Josef Pola

    2009-03-01

    Full Text Available Laser radiation-induced decomposition of gaseous organic selenides and tellurides resulting in chemical deposition of nanostructured materials on cold surfaces is reviewed with regard to the mechanism of the gas-phase decomposition and properties of the deposited materials. The laser photolysis and laser thermolysis of the Se and Te precursors leading to chalcogen deposition can also serve as a useful approach to nanostructured chalcogen composites and IVA group (Si, Ge, Sn element chalcogenides provided that it is carried out simultaneously with laser photolysis or thermolysis of polymer and IVA group element precursor.

  12. Laser photolysis and thermolysis of organic selenides and tellurides for chemical gas-phase deposition of nanostructured materials.

    Science.gov (United States)

    Pola, Josef; Ouchi, Akihiko

    2009-03-12

    Laser radiation-induced decomposition of gaseous organic selenides and tellurides resulting in chemical deposition of nanostructured materials on cold surfaces is reviewed with regard to the mechanism of the gas-phase decomposition and properties of the deposited materials. The laser photolysis and laser thermolysis of the Se and Te precursors leading to chalcogen deposition can also serve as a useful approach to nanostructured chalcogen composites and IVA group (Si, Ge, Sn) element chalcogenides provided that it is carried out simultaneously with laser photolysis or thermolysis of polymer and IVA group element precursor.

  13. NaBH{sub 4}/[bmim]BF{sub 4}: a new reducing system to access vinyl selenides and tellurides

    Energy Technology Data Exchange (ETDEWEB)

    Lenardao, Eder J.; Goncalves, Loren C.C.; Mendes, Samuel R.; Saraiva, Maiara T.; Alves, Diego; Jacob, Raquel G.; Perin, Gelson, E-mail: lenardao@ufpel.edu.b [Universidade Federal de Pelotas (UFPel), RS (Brazil). Inst. de Quimica e Geociencias. Lab. de Sintese Organica Limpa (LASOL)

    2010-07-01

    A general and simple method for the synthesis of vinyl selenides and tellurides starting from terminal alkynes and diorganyl chalcogenides using NaBH{sub 4} and [bmim]BF{sub 4} as a recyclable solvent was developed. This efficient and improved method furnishes the corresponding vinyl chalcogenides preferentially with Z configuration. We also observed that when the same protocol was applied to phenyl acetylene, (E)-bis-phenylchalcogeno styrenes were obtained in good yields and high selectivity. The ionic liquid was reused up three times without lost of efficiency. (author)

  14. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

    2015-06-01

    Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

  15. Origin of sapphires from a lamprophyre dike at Yogo Gulch, Montana, USA: Clues from their melt inclusions

    Science.gov (United States)

    Palke, Aaron C.; Renfro, Nathan D.; Berg, Richard B.

    2016-09-01

    Gem corundum (sapphire) has been mined from an ultramafic lamprophyre dike at Yogo Gulch in central Montana for over 100 years. The sapphires bear signs of corrosion showing that they were not in equilibrium with the lamprophyre that transported them; however, their genesis is poorly understood. We report here the observation of minute glassy melt inclusions in Yogo sapphires. These inclusions are Na- and Ca-rich, Fe-, Mg-, and K-poor silicate glasses with compositions unlike that of the host lamprophyre. Larger, recrystallized melt inclusions contain analcime and calcite drawing a striking resemblance to leucocratic ocelli in the lamprophyre. We suggest here that sapphires formed through partial melting of Al-rich rocks, likely as the lamprophyre pooled at the base of the continental crust. This idea is corroborated by MELTS calculations on a kyanite-eclogite protolith which was presumably derived from a troctolite precursor. These calculations suggest that corundum can form through peritectic melting of kyanite. Linking the melt inclusions petrologically to the lamprophyre represents a significant advancement in our understanding of sapphire genesis and sheds light on how mantle-derived magmas may interact with the continental crust on their ascent to the surface.

  16. Growth and characterization of VO{sub 2}/p-GaN/sapphire heterostructure with phase transition properties

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Jiming, E-mail: jmbian@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China); Wang, Minhuan; Miao, Lihua; Li, Xiaoxuan; Luo, Yingmin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhang, Dong [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); New Energy Source Research Center of Shenyang Institute of Engineering, Shenyang 110136 (China); Zhang, Yuzhi [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China)

    2015-12-01

    Highlights: • VO{sub 2} films were deposited on p-GaN/sapphire substrates by PLD. • A well-defined VO{sub 2}/p-GaN/sapphire interface was observed. • The valence state of V in VO{sub 2} films was confirmed by XPS analyses. • A distinct reversible SMT phase transition behavior was observed. - Abstract: High quality pure phase VO{sub 2} films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO{sub 2}/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}, no other valence state of V was detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) phase transition with resistance change up to nearly three orders of magnitude was observed in the temperature dependent electrical resistance measurement, which was comparable to the high quality VO{sub 2} film grown directly on sapphire substrates. Our present findings will give a deeper insight into the physical mechanism behind the exotic characteristics of VO{sub 2}/p-GaN heterostructure, and further motivate research in novel devices with combined functional properties of both correlated oxide and wide bandgap nitride semiconductors.

  17. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  18. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    CERN Document Server

    Karacheban, O; Hempel, M; Henschel, H; Lange, W; Leonard, J L; Levy, I; Lohmann, W; Schuwalow, S

    2015-01-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitoring systems at the Large Hadron Collider, FLASH or XFEL. Artificial diamond sensors are currently widely used as sensors in these systems. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm^2 size and 525 micrometer thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the dete...

  19. Transparent nickel selenide used as counter electrode in high efficient dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Jinbiao; Wu, Jihuai, E-mail: jhwu@hqu.edu.cn; Tu, Yongguang; Huo, Jinghao; Zheng, Min; Lin, Jianming

    2015-08-15

    Highlights: • A transparent Ni{sub 0.85}Se is prepared by a facile solvothermal reaction. • Ni{sub 0.85}Se electrode has better electrocatalytic activity than Pt electrode. • DSSC with Ni{sub 0.85}Se electrode obtains efficiency of 8.88%, higher than DSSC with Pt. • DSSC with Ni{sub 0.85}Se/mirror electrode achieves an efficiency of 10.19%. - Abstract: A transparent nickel selenide (Ni{sub 0.85}Se) is prepared by a facile solvothermal reaction and used as an efficient Pt-free counter electrode (CE) for dye-sensitized solar cells (DSSCs). Field emission scanning electron microscopy observes that the as-prepared Ni{sub 0.85}Se possesses porous structure. Cyclic voltammogram measurement indicates that Ni{sub 0.85}Se electrode has larger current density than Pt electrode. Electrochemical impedance spectroscopy shows that the Ni{sub 0.85}Se electrode has lower charge-transfer resistance than Pt electrode. Under simulated solar light irradiation with intensity of 100 mW cm{sup −2} (AM 1.5), the DSSC based on the Ni{sub 0.85}Se CE achieves a power conversion efficiency (PCE) of 8.88%, which is higher than the solar cell based on Pt CE (8.13%). Based on the transparency of Ni{sub 0.85}Se, the DSSC with Ni{sub 0.85}Se/mirror achieves a PCE of 10.19%.

  20. Exploring the doping effects of copper on thermoelectric properties of lead selenide

    Science.gov (United States)

    Gayner, Chhatrasal; Sharma, Raghunandan; Mallik, Iram; Das, Malay K.; Kar, Kamal K.

    2016-07-01

    In this work, we have explored the effect of dopant concentration (copper (Cu)) on the thermoelectric performance of Cu doped lead selenide (Pb1-x Cu x Se (0  ⩽  x  ⩽  0.1)). With increasing the dopant concentration, sign inversion of majority charge carriers takes place for x  ⩾  0.04 due to the donor behaviour of Cu in the P-type pristine PbSe. The room temperature Seebeck coefficients of Pb1-x Cu x Se with x  =  0.01, 0.02, 0.04, 0.06 and 0.08 are observed to be 233, 337, -473.7, -392.5 and  -257.6 μV K-1, respectively as compared to that of 186.4 μV K-1 of the pristine PbSe. This increment in Seebeck coefficient is the result of low carrier concentration and is not related to the resonance states created by Cu dopant. At room temperature, the lattice thermal conductivity of pristine PbSe is 0.52 W m-1 K-1 while for Cu doped PbSe, it varies from 0.8 to 1.1 W m-1 K-1. Finally, with ZT of ~0.59 and power factor of ~700 at 500 K, Pb0.98Cu0.02Se exhibits the highest thermoelectric performance among the studied Pb1-x Cu x Se systems. Owing to the high ZT and power factor, a single thermoelement of Pb0.98Cu0.02Se exhibits thermovoltage of  >100 mV at a temperature gradient of 200 °C.

  1. Parallel molecular dynamics simulations of pressure-induced structural transformations in cadmium selenide nanocrystals

    Science.gov (United States)

    Lee, Nicholas Jabari Ouma

    Parallel molecular dynamics (MD) simulations are performed to investigate pressure-induced solid-to-solid structural phase transformations in cadmium selenide (CdSe) nanorods. The effects of the size and shape of nanorods on different aspects of structural phase transformations are studied. Simulations are based on interatomic potentials validated extensively by experiments. Simulations range from 105 to 106 atoms. These simulations are enabled by highly scalable algorithms executed on massively parallel Beowulf computing architectures. Pressure-induced structural transformations are studied using a hydrostatic pressure medium simulated by atoms interacting via Lennard-Jones potential. Four single-crystal CdSe nanorods, each 44A in diameter but varying in length, in the range between 44A and 600A, are studied independently in two sets of simulations. The first simulation is the downstroke simulation, where each rod is embedded in the pressure medium and subjected to increasing pressure during which it undergoes a forward transformation from a 4-fold coordinated wurtzite (WZ) crystal structure to a 6-fold coordinated rocksalt (RS) crystal structure. In the second so-called upstroke simulation, the pressure on the rods is decreased and a reverse transformation from 6-fold RS to a 4-fold coordinated phase is observed. The transformation pressure in the forward transformation depends on the nanorod size, with longer rods transforming at lower pressures close to the bulk transformation pressure. Spatially-resolved structural analyses, including pair-distributions, atomic-coordinations and bond-angle distributions, indicate nucleation begins at the surface of nanorods and spreads inward. The transformation results in a single RS domain, in agreement with experiments. The microscopic mechanism for transformation is observed to be the same as for bulk CdSe. A nanorod size dependency is also found in reverse structural transformations, with longer nanorods transforming more

  2. Analysis on the Performance of Copper Indium Gallium Selenide (CIGS Based Photovoltaic Thermal

    Directory of Open Access Journals (Sweden)

    Zulkepli Afzam

    2016-01-01

    Full Text Available This paper deals with the efficiency improvement of Copper Indium Gallium Selenide (CIGS Photovoltaic (PV and also solar thermal collector. Photovoltaic thermal (PV/T can improve overall efficiency for PV and also solve the problem of limited roof space at urban area. Objective of this study is to clarify the effect of mass flow rate on the efficiency of the PV/T system. A CIGS solar cell is used with rated output power 65 W and 1.18 m2 of area. 4 set of experiments were carried out, which were: thermal collector with 0.12 kg/s flow rate, PV/T with 0.12 kg/s flow rate, PV/T with 0.09 kg/s flow rate and PV. It was found that PV/T with 0.12 kg/s flow rate had the highest electrical efficiency, 2.92 %. PV/T with 0.09 kg/s flow rate had the lowest electrical efficiency, 2.68 %. It also had 2 % higher overall efficiency. The efficiency gained is low due to several factors. The rated output power of the PV is low for the area of 1.18 m2. The packing factor of the PV also need to be considered as it may not be operated at the optimal packing factor. Furthermore, aluminium sheet of the PV may affect the PV temperature due to high thermal conductivity. Further study on more values of mass flow rate and also other parameters that affect the efficiency of the PV/T is necessary.

  3. Depleted zinc: Properties, application, production.

    Science.gov (United States)

    Borisevich, V D; Pavlov, A V; Okhotina, I A

    2009-01-01

    The addition of ZnO, depleted in the Zn-64 isotope, to the water of boiling water nuclear reactors lessens the accumulation of Co-60 on the reactor interior surfaces, reduces radioactive wastes and increases the reactor service-life because of the inhibitory action of zinc on inter-granular stress corrosion cracking. To the same effect depleted zinc in the form of acetate dihydrate is used in pressurized water reactors. Gas centrifuge isotope separation method is applied for production of depleted zinc on the industrial scale. More than 20 years of depleted zinc application history demonstrates its benefits for reduction of NPP personnel radiation exposure and combating construction materials corrosion.

  4. Chloroquine is a zinc ionophore.

    Directory of Open Access Journals (Sweden)

    Jing Xue

    Full Text Available Chloroquine is an established antimalarial agent that has been recently tested in clinical trials for its anticancer activity. The favorable effect of chloroquine appears to be due to its ability to sensitize cancerous cells to chemotherapy, radiation therapy, and induce apoptosis. The present study investigated the interaction of zinc ions with chloroquine in a human ovarian cancer cell line (A2780. Chloroquine enhanced zinc uptake by A2780 cells in a concentration-dependent manner, as assayed using a fluorescent zinc probe. This enhancement was attenuated by TPEN, a high affinity metal-binding compound, indicating the specificity of the zinc uptake. Furthermore, addition of copper or iron ions had no effect on chloroquine-induced zinc uptake. Fluorescent microscopic examination of intracellular zinc distribution demonstrated that free zinc ions are more concentrated in the lysosomes after addition of chloroquine, which is consistent with previous reports showing that chloroquine inhibits lysosome function. The combination of chloroquine with zinc enhanced chloroquine's cytotoxicity and induced apoptosis in A2780 cells. Thus chloroquine is a zinc ionophore, a property that may contribute to chloroquine's anticancer activity.

  5. Zinc In CCl4 Toxicity

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Objective To investigate the protective effect of zinc in CCl4-induced hepatotoxicity. Methods Rats were treated with zinc acetate for four days. The zinc doses were 5 mg Zn/kg and 10 mg Zn/kg body weight respectively. Two groups of the zinc acetate-treated rats were later challenged with a single dose of CCl4 (1.5 mL/kg body weight). Results Compared to control animals, the plasma of rats treated with CCl4 showed hyperbilirubinaemia, hypoglycaemia, hypercreatinaemia and hypoproteinaemia. When the animals were however supplemented with zinc in form of zinc acetate before being dosed with CCl4, the 5 mg Zn/kg body weight of zinc acetate reversed the hypoproteinaemia induced by CCl4, whereas the 10mg Zn/kg body weight of zinc acetate reversed the hypoglycaemia, hyperbilimbinaemia and hypercreatinaemia induced by CCl4. Conclusion The 10mug Zn/kg body weight of zinc acetate is more consistent in protecting against CCl4 hepatotoxicity. The possible mechanisms of protection are highlighted.

  6. Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions

    Science.gov (United States)

    Creighton, J. Randall; Coltrin, Michael E.; Figiel, Jeffrey J.

    2017-04-01

    Growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measurements are very difficult because of substrate transparency in the near-IR ( 900 nm) where conventional pyrometers detect radiation. The transparency problem can be solved by using a mid-IR pyrometer operating at a wavelength ( 7500 nm) where sapphire is opaque. We employ a mid-IR pyrometer to measure the sapphire wafer temperature and simultaneously a near-IR pyrometer to measure wafer pocket temperature, while varying reactor pressure in both a N2 and H2 ambient. Near 1300 °C, as the reactor pressure is lowered from 300 Torr to 10 Torr the wafer temperature drops dramatically, and the ∆T between the pocket and wafer increases from 20 °C to 250 °C. Without the mid-IR pyrometer the large wafer temperature change with pressure would not have been noted. In order to explain this behavior we have developed a quasi-2D thermal model that includes a proper accounting of the pressure-dependent thermal contact resistance, and also accounts for sapphire optical transmission. The model and experimental results demonstrate that at most growth conditions the majority of the heat is transported from the wafer pocket to the wafer via gas conduction, in the free molecular flow limit. In this limit gas conductivity is independent of gap size but first order in pressure, and can quantitatively explain results from 20 to 300 Torr. Further analysis yields a measure of the thermal accommodation coefficients; α(H2) =0.23, α(N2) =0.50, which are in the range typically measured.

  7. Effect of Ti:Sapphire-femtosecond laser on the surface roughness of ceramics.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-12-01

    Some of these adult patients have ceramic crowns, to which orthodontists have concerns about bonding brackets. The aim of the present study was to evaluate the effect of a Ti:Sapphire femtosecond (fs) laser (Integra-C-3.5, Quantronix, NY) on the surface roughness of two ceramic surfaces (feldspathic and IPS Empress e-Max) and to compare results with those of two other lasers (Er:YAG and Nd:YAG) and conventional techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. Ceramic discs were fabricated (n = 150) and divided into two groups, each of which was then divided into five subgroups prepared with Ti:Sapphire fs, Nd:YAG, or Er:YAG lasers, sandblasting, or HF acid (n = 15). The surface roughness of the ceramic discs was evaluated using a profilometer (Mitotoyo Surf Test SJ 201 P/M; Mitutoyo Corp, Japan) before and after each surface treatment. Three traces were recorded for each specimen at three different locations in each direction, providing nine measurements per sample, which were then averaged to obtain the surface roughness value. Data were analyzed using the Wilcoxon signed-rank test (P laser was associated with the highest mean roughness value. AFM images of the ceramic surfaces treated confirmed that the fs-laser-treated surfaces had the highest degree of irregularity. Within the limitations of this in vitro study, the Ti:Sapphire fs laser yielded the highest surface roughness and could be an alternative ceramic surface treatment to increase bond strength. © 2015 Wiley Periodicals, Inc.

  8. Microstructure characterization and optical properties of sapphire after helium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Mian; Yang, Liang [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Shen, Huahai [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Wei [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xiang, Xia, E-mail: xiaxiang@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Wanguo, E-mail: wgzheng_caep@sina.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Guo, Decheng [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Huang, Jin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, Kai [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Yuan, Xiaodong, E-mail: yxd66my@163.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-06-15

    The (0 0 0 1) sapphire samples are irradiated with 60 keV helium ions at the fluences of 5 × 10{sup 16}, 1 × 10{sup 17}and 5 × 10{sup 17} ions/cm{sup 2} at room temperature. After implantation, two broad absorption bands at 320–460 and 480–700 nm are observed and their intensities increase with the increasing ion fluence. The grazing incidence X-ray diffraction results indicate that the {0 0 0 1} diffraction peaks of sapphire decrease and broaden due to the disorientation of the generated crystallites after ion irradiation. The microstructure evolution is examined by the scanning and transmission electron microscopes. The surface becomes rough because of the aggregation of helium bubbles and migration towards the surface. There is a lattice expansion up to ∼4.5% in the implanted area and the lattice distortion measured from dispersion of (1 1 0) diffraction is ∼4.6°. Such strain of crystal lattice is rather large and leads to contrast fluctuation at scale of 1–2 nm (the bubble size). The laser induced damage threshold (LIDT) is investigated to understand the effect of helium ion beam irradiation on the laser damage resistance of sapphire components and the results show that the LIDT decreases from 5.4 to 2.5 J/cm{sup 2} due to the absorptive color centers, helium bubbles and defects induced by helium ion implantation. The laser damage morphologies of samples before and after ion implantation are also presented.

  9. New CVD-based method for the growth of high-quality crystalline zinc oxide layers

    Science.gov (United States)

    Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

    2016-07-01

    High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

  10. Pulse formation and characteristics of the cw mode-locked titanium-doped sapphire laser

    Science.gov (United States)

    Zschocke, Wolfgang; Stamm, Uwe; Heumann, Ernst; Ledig, Mario; Guenzel, Uwe; Kvapil, Jiri; Koselja, Michael P.; Kubelka, Jiri

    1991-10-01

    We report on measurements of transient and steady-state pulse characteristics of an acousto- optically mode-locked titanium-doped sapphire laser. During the pulse evolution, oscillations in the pulse width and pulse energy are found. A steady state is reached after about 40 to 60 microsecond(s) . The steady-state pulse width is strongly influenced by the mode-locking loss as well as the intracavity bandwidth. Shortest pulses of typically 15 ps are obtained. The experiment is compared with results of a simple computer simulation.

  11. Long-term optical phase locking between femtosecond Ti:sapphire and Cr:forsterite lasers

    Science.gov (United States)

    Kobayashi, Yohei; Yoshitomi, Dai; Kakehata, Masayuki; Takada, Hideyuki; Torizuka, Kenji

    2005-09-01

    Long-term optical phase-coherent two-color femtosecond pulses were generated by use of passively timing-synchronized Ti:sapphire and Cr:forsterite lasers. The relative carrier-envelope phase relation was fixed by an active feedback loop. The accumulated phase noise from 10 mHz to 1 MHz of the locked beat note was 0.43 rad, showing tight phase locking. The optical frequency fluctuation between two femtosecond combs was submillihertz, with a 1 s averaged counter measurement over 3400 s, leading to a long-term femtosecond frequency-comb connection.

  12. A 10-Hz terawatt class Ti:sapphire laser system: Development and applications

    Indian Academy of Sciences (India)

    A K Sharma; J Smedley; T Tsang; T Rao

    2010-11-01

    We developed a two-stage Ti:sapphire laser system to generate 16 mJ/80 fs laser pulses at a pulse repetition rate of 10 Hz. The key deriver for the present design is implementing a highly efficient symmetric confocal pre-amplifier and employing a simple, inexpensive synchronization scheme relying only on a commercial digital delay generator. We characterized the amplified pulses in spatial, spectral and temporal domains. The laser system was used to investigate various nonlinear optical processes, and to modify the optical properties of metal and semiconductor surfaces. We are currently building a third amplifier to boost the laser power to the multi-terawatt range.

  13. Grating-coupled silicon-on-sapphire integrated slot waveguides operating at mid-infrared wavelengths.

    Science.gov (United States)

    Zou, Yi; Subbaraman, Harish; Chakravarty, Swapnajit; Xu, Xiaochuan; Hosseini, Amir; Lai, Wei-Cheng; Wray, Parker; Chen, Ray T

    2014-05-15

    We demonstrate subwavelength bidirectional grating (SWG) coupled slot waveguide fabricated in silicon-on-sapphire for transverse electric polarized wave operation at 3.4 μm wavelength. Coupling efficiency of 29% for SWG coupler is experimentally achieved. Propagation loss of 11  dB/cm has been experimentally obtained for slot waveguides. Two-step taper mode converters with an insertion loss of 0.13 dB are used to gradually convert the strip waveguide mode into slot waveguide mode.

  14. Autonomous cryogenic sapphire oscillators employing low vibration pulse-tube cryocoolers at NMIJ

    Science.gov (United States)

    Ikegami, Takeshi; Watabe, Ken-ichi; Yanagimachi, Shinya; Takamizawa, Akifumi; Hartnett, John G.

    2016-06-01

    Two liquid-helium-cooled cryogenic sapphire-resonator oscillators (CSOs), have been modified to operate using cryo-refrigerators and low-vibration cryostats. The Allan deviation of the first CSO was evaluated to be better than 2 x 10-15 for averaging times of 1 s to 30 000 s, which is better than that of the original liquid helium cooled CSO. The Allan deviation of the second CSO is better than 4 x 10-15 from 1 s to 6 000 s averaging time.

  15. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

    Institute of Scientific and Technical Information of China (English)

    WU Meng; ZENG Yi-Ping; WANG Jun-Xi; HU Qiang

    2011-01-01

    @@ A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal- organic chemical vapor deposition (MOCVD).The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered.Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed.A pattern model is also proposed to analyze the possible mechanisms in atomic scale.

  16. Ultrahigh resolution optical coherence tomography with femtosecond Ti:sapphire laser and photonic crystal fiber

    Institute of Scientific and Technical Information of China (English)

    XUE Ping; James G FUJIMOTO

    2008-01-01

    Optical coherence tomography (OCT) with ultrahigh axial resolution was achieved by the super-contin- uum generated by coupling femtosecond pulses from a commercial Ti :sapphire laser into an air-silica microstructure fiber. The visible spectrum of the super-continuum from 450 to 700 nm centered at 540 nm can be generated. A free-space axial OCT resolution of 0.64 IJm was achieved. The sensitivity of OCT system was 108 dB with incident light power 3 mW at sample, only 7dB below the theoretical limit. Subcellular OCT imaging was also demonstrated, showing great potential for biomedical application.

  17. Analysis of tunable picosecond pulse generation from a distributed feedback Ti:sapphire laser

    Institute of Scientific and Technical Information of China (English)

    Hong Zhi; Yao Xiao-Ke

    2004-01-01

    A distributed feedback Ti:sapphire laser (DFTL) pumped by a 532nm Q-switched pulse is proposed for the generation of tunable picosecond pulses. With coupled rate equation model, the temporal characteristics of DFTL are obtained. The numerical solutions show that the DFTL pulse with a 50-ps pulse duration and as much as 3.SmJ pulse energy can be obtained under 40-m J, 5-ns pulse pumping. The dependence of output pulse width on the laser crystal's length, pumping pulse duration, and pumping rate is also discussed in detail.

  18. Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching.

    Science.gov (United States)

    Moser, Rüdiger; Ojha, Nirdesh; Kunzer, Michael; Schwarz, Ulrich T

    2011-11-21

    We demonstrate the realization of sub-surface channels in sapphire prepared by ultraviolet picosecond laser irradiation and subsequent selective wet etching. By optimizing the pulse energy and the separation between individual laser pulses, an optimization of channel length can be achieved with an aspect ratio as high as 3200. Due to strong variation in channel length, further investigation was done to improve the reproducibility. By multiple irradiations the standard deviation of the channel length could be reduced to 2.2%. The achieved channel length together with the high reproducibility and the use of a commercial picosecond laser system makes the process attractive for industrial application.

  19. Containerless laser-induced flourescence study of vaporization and optical properties for sapphire and alumina

    Science.gov (United States)

    Nordine, Paul C.; Schiffman, Robert A.

    1988-01-01

    Evaporation of aluminum oxide was studied from 1800 to 2327 K by laser-induced flourescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO2 laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al2O3. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

  20. Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods

    Science.gov (United States)

    Boquillon, J. P.; Said, J.

    1992-04-01

    The design and the development of a flashlamp-pumped Ti:Sapphire laser is described. Design criteria are discussed and performance improvements using different types of fluorescent UV converters or filters, such as organic dyes or doped glass are presented. We have tested different laser rods at various Ti-concentrations obtained by Verneuil or Czochralski growth techniques. The maximum laser output energy of 540 mJ with a differential efficiency up to 1% was achieved by using only a pyrex filter surrounding the laser rod.

  1. A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

    DEFF Research Database (Denmark)

    Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

    2010-01-01

    We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

  2. Measurement of Birefringence of Low-Loss, High-Reflectance Coating of M-Axis Sapphire

    OpenAIRE

    2001-01-01

    The birefringence of a low-loss, high-reflectance coating applied to an 8-cm-diameter sapphire crystal grown in the m-axis direction has been mapped. By monitoring the transmission of a high-finesse Fabry-Perot cavity as a function of the polarization of the input light, we find an upper limit for the magnitude of the birefringence of 2.5 x 10^-4 rad and an upper limit in the variation in direction of the birefringence of 10 deg. These values are sufficiently small to allow consideration of m...

  3. Synchronization of an Ultrafast Ti:Sapphire Laser to the S-Band Microwave

    Institute of Scientific and Technical Information of China (English)

    LIU Sheng-Guang; WANG Ming-Kai; SUN Da-Rui; DAI Jian-Ping; LI Yong-Gui

    2004-01-01

    @@ We have synchronized a 102-MHz ultrafast self-mode-locked Ti:sapphire laser to a 2856-MHz rf source with the sample-locking technology. The relative root-mean-square time-jitter is 0.57ps and the maximum time jitter is 2.60ps. This is the first time that synchronization between the ultrafast laser pulse and the s-band microwave has been accomplished in China. Potential applications include synchronization of lasers and rf power sources in particle accelerator experiments and high-resolution pump-probe experiments.

  4. All solid-state, injection-seeded Ti: sapphire ring laser

    Institute of Scientific and Technical Information of China (English)

    Ting Yu; Weibiao Chen; Jun Zhou; Jinzi Bi; Junwen Cui

    2005-01-01

    @@ In this letter, we present an all solid-state, injection-seeded Ti:sapphire laser. The laser is pumped by a laser diode pumped frequency-doubled Nd:YAG laser, and injection-seeded by an external cavity laser diode with the wavelength between 770 and 780 nm. The single longitude mode and the doubling efficiency of the laser are obtained after injection seeding. The experimental setup and relative results are reported.It is a good candidate laser source for mobile differential absorption lidar (DIAL) system.

  5. Homogenous Crack-Free Large Size YBCO/YSZ/Sapphire Films for Application

    Science.gov (United States)

    Almog, B.; Azoulay, M.; Deutscher, G.

    2006-09-01

    YBa2Cu3O7-δ (YBCO) films grown on Sapphire are highly suitable for applications. The production of large size (2-3″) homogeneous, thick (d ⩾ 600nm) films of high quality is of major importance. We report the growth of such films using a buffer layer of Yttrium-stabilized ZrO2(YSZ). The films are highly homogeneous and show excellent mechanical properties. They exhibit no sign of cracking even after many thermal cycles. Their critical thickness exceeds 1000nm. However, because of the large lattice mismatch there is a decrease in the electric properties(increases Rs, decreases jc).

  6. Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method

    Science.gov (United States)

    Samanta, Gaurab; Yeckel, Andrew; Bourret-Courchesne, Edith D.; Derby, Jeffrey J.

    2012-11-01

    The micro-pulling-down (μ-PD) crystal growth of sapphire fibers, whose steady-state limits were the focus of our prior study [Samanta et al., Journal of Crystal Growth 335 (2011) 148-159], is further examined using a parametric sensitivity computation derived by linearizing the nonlinear model around a quasi-steady-state (QSS). In addition, transient analyses are performed to assess inherent stability and dynamic responses in this μ-PD system. Information from these two approaches enlarges our understanding of this particular process, and the approaches themselves are put forth as valuable complements to classical QSS analysis.

  7. Zinc supplementation for tinnitus.

    Science.gov (United States)

    Person, Osmar C; Puga, Maria Es; da Silva, Edina Mk; Torloni, Maria R

    2016-11-23

    Tinnitus is the perception of sound without external acoustic stimuli. Patients with severe tinnitus may have physical and psychological complaints and their tinnitus can cause deterioration in their quality of life. At present no specific therapy for tinnitus has been found to be satisfactory in all patients. In recent decades, a number of reports have suggested that oral zinc supplementation may be effective in the management of tinnitus. Since zinc has a role in cochlear physiology and in the synapses of the auditory system, there is a plausible mechanism of action for this treatment. To evaluate the effectiveness and safety of oral zinc supplementation in the management of patients with tinnitus. The Cochrane ENT Information Specialist searched the ENT Trials Register; Central Register of Controlled Trials (CENTRAL 2016, Issue 6); PubMed; EMBASE; CINAHL; Web of Science; ClinicalTrials.gov; ICTRP and additional sources for published and unpublished trials. The date of the search was 14 July 2016. Randomised controlled trials comparing zinc supplementation versus placebo in adults (18 years and over) with tinnitus. We used the standard methodological procedures recommended by Cochrane. Our primary outcome measures were improvement in tinnitus severity and disability, measured by a validated tinnitus-specific questionnaire, and adverse effects. Secondary outcomes were quality of life, change in socioeconomic impact associated with work, change in anxiety and depression disorders, change in psychoacoustic parameters, change in tinnitus loudness, change in overall severity of tinnitus and change in thresholds on pure tone audiometry. We used GRADE to assess the quality of the evidence for each outcome; this is indicated in italics. We included three trials involving a total of 209 participants. The studies were at moderate to high risk of bias. All included studies had differences in participant selection criteria, length of follow-up and outcome measurement

  8. Inhibitory zinc-enriched terminals in mouse spinal cord

    DEFF Research Database (Denmark)

    Danscher, G; Jo, S M; Varea, E;

    2001-01-01

    The ultrastructural localization of zinc transporter-3, glutamate decarboxylase and zinc ions in zinc-enriched terminals in the mouse spinal cord was studied by zinc transporter-3 and glutamate decarboxylase immunohistochemistry and zinc selenium autometallography, respectively.The distribution...

  9. Zinc absorption by young adults from supplemental zinc citrate is comparable with that from zinc gluconate and higher than from zinc oxide.

    Science.gov (United States)

    Wegmüller, Rita; Tay, Fabian; Zeder, Christophe; Brnic, Marica; Hurrell, Richard F

    2014-02-01

    The water-soluble zinc salts gluconate, sulfate, and acetate are commonly used as supplements in tablet or syrup form to prevent zinc deficiency and to treat diarrhea in children in combination with oral rehydration. Zinc citrate is an alternative compound with high zinc content, slightly soluble in water, which has better sensory properties in syrups but no absorption data in humans. We used the double-isotope tracer method with (67)Zn and (70)Zn to measure zinc absorption from zinc citrate given as supplements containing 10 mg of zinc to 15 healthy adults without food and compared absorption with that from zinc gluconate and zinc oxide (insoluble in water) using a randomized, double-masked, 3-way crossover design. Median (IQR) fractional absorption of zinc from zinc citrate was 61.3% (56.6-71.0) and was not different from that from zinc gluconate with 60.9% (50.6-71.7). Absorption from zinc oxide at 49.9% (40.9-57.7) was significantly lower than from both other supplements (P zinc oxide. We conclude that zinc citrate, given as a supplement without food, is as well absorbed by healthy adults as zinc gluconate and may thus be a useful alternative for preventing zinc deficiency and treating diarrhea. The more insoluble zinc oxide is less well absorbed when given as a supplement without food and may be minimally absorbed by some individuals. This trial was registered at clinicaltrials.gov as NCT01576627.

  10. Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Lipski, Frank; Roesch, Rudolf; Scholz, Ferdinand [Institute of Optoelectronics, University of Ulm (Germany)

    2010-07-01

    We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution X-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400 arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.

  11. Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

    Science.gov (United States)

    Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo

    2017-09-01

    The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.

  12. Multimode interference and a white light scanning Michelson interferometer with a 400-mm sapphire fiber sensing head

    Science.gov (United States)

    Li, Tianchu; May, Russell G.; Wang, Anbo; Claus, Richard O.

    1998-08-01

    In this paper we present the analysis of multimode (MM) interference induced by MM fiber interferometers and report the development of a white light scanning fiber Michelson interferometer with a sapphire fiber sensing head for the measurement of position-distance at high temperatures. The 'mode fading' effect in standard graded 50/125 micrometers fiber and independent 'inter-mode interference' in 100 micrometers step index profile fiber are discussed. By means of the 'mode selecting' technique, proposed and developed in this work, we demonstrated white light fringes with signal to noise ratios of more than 12 with a sensing head composed of a 400 mm long lead sapphire fiber and an uncoated sapphire target fiber.

  13. Antibody-forming cells and serum hemolysin responses of pastel and sapphire mink inoculated with Aleutian disease virus.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J

    1973-11-01

    The effect of Aleutian disease virus (ADV) on serum hemolysin titers and antibody-forming cells in lymph nodes and spleens of sapphire and pastel mink inoculated with goat erythrocytes (G-RBC) was investigated. ADV injected 1 day after primary antigenic stimulation with G-RBC did not depress the immune responses of either color phase for a period of 26 days. However, when G-RBC were injected 47 days after ADV, both the number of antibody-forming cells and hemolysin titers were more markedly depressed in sapphire than in pastel mink. The results are discussed in relation to the greater susceptibility of sapphire mink and the variable susceptibility of pastel mink to the Pullman isolate of ADV.

  14. Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

    Science.gov (United States)

    Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

    2015-01-14

    Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

  15. [{Cp2(tBuSe)Nb}2E] (E = O and Se) with bridging oxide or selenide ligands.

    Science.gov (United States)

    Hector, Andrew L; Jura, Marek; Levason, William; Reid, Gillian; Reid, Stuart D; Webster, Michael

    2008-10-01

    The title compounds, mu-oxido-bis[(tert-butylselenolato)bis(eta(5)-cyclopentadienyl)niobium(IV)] toluene solvate, [Nb(2)(C(5)H(5))(4)(C(4)H(9)Se)(2)O] x C(7)H(8), and mu-selenido-bis[(tert-butylselenolato)bis(eta(5)-cyclopentadienyl)niobium(IV)], [Nb(2)(C(5)H(5))(4)(C(4)H(9)Se)(2)Se], consist of niobium(IV) centres each bonded to two eta(5)-coordinated cyclopentadienyl groups and one tert-butylselenolate ligand and are the first organometallic niobium selenolates to be structurally characterized. A bridging oxide or selenide completes the niobium coordination spheres of the discrete dinuclear molecules. In the oxide, the O atom lies on an inversion centre, resulting in a linear Nb-O-Nb linkage, whereas the selenide has a bent bridging group [Nb-Se-Nb = 139.76 (2) degrees]. The difference is attributable to strong pi bonding in the oxide case, although the effects on the Nb-C and Nb-Se(t)Bu bond lengths are small.

  16. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David S. (Evergreen, CO); Leisch, Jennifer (Denver, CO); Taylor, Matthew (West Simsbury, CT); Stanbery, Billy J. (Austin, TX)

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  17. Soft chemical control of superconductivity in lithium iron selenide hydroxides Li(1-x)Fe(x)(OH)Fe(1-y)Se.

    Science.gov (United States)

    Sun, Hualei; Woodruff, Daniel N; Cassidy, Simon J; Allcroft, Genevieve M; Sedlmaier, Stefan J; Thompson, Amber L; Bingham, Paul A; Forder, Susan D; Cartenet, Simon; Mary, Nicolas; Ramos, Silvia; Foronda, Francesca R; Williams, Benjamin H; Li, Xiaodong; Blundell, Stephen J; Clarke, Simon J

    2015-02-16

    Hydrothermal synthesis is described of layered lithium iron selenide hydroxides Li(1-x)Fe(x)(OH)Fe(1-y)Se (x ∼ 0.2; 0.02 iron site vacancy concentrations in the iron selenide layers. This iron vacancy concentration is revealed as the only significant compositional variable and as the key parameter controlling the crystal structure and the electronic properties. Single crystal X-ray diffraction, neutron powder diffraction, and X-ray absorption spectroscopy measurements are used to demonstrate that superconductivity at temperatures as high as 40 K is observed in the hydrothermally synthesized samples when the iron vacancy concentration is low (y iron oxidation state is reduced slightly below +2, while samples with a higher vacancy concentration and a correspondingly higher iron oxidation state are not superconducting. The importance of combining a low iron oxidation state with a low vacancy concentration in the iron selenide layers is emphasized by the demonstration that reductive postsynthetic lithiation of the samples turns on superconductivity with critical temperatures exceeding 40 K by displacing iron atoms from the Li(1-x)Fe(x)(OH) reservoir layer to fill vacancies in the selenide layer.

  18. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  19. Influence of Cr and W alloying on the fiber-matrix interfacial shear strength in cast and directionally solidified sapphire NiAl composites

    Science.gov (United States)

    Asthana, R.; Tiwari, R.; Tewari, S. N.

    1995-01-01

    Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.

  20. El zinc: oligoelemento esencial

    Directory of Open Access Journals (Sweden)

    C. Rubio

    Full Text Available En este artículo se hace una revisión exhaustiva del zinc, elemento metálico esencial para el funcionamiento del organismo. Repasamos y reflejamos aspectos relacionados con la farmacocinética, con las fuentes dietéticas más importantes, así como las IDR (Ingestas Dietéticas Recomendadas del mismo. También se hace mención a los signos y síntomas relacionados tanto con una ingesta deficiente, como con posibles efectos tóxicos, derivados de ingestas excesivas.

  1. Zinc Base Die Castings

    Science.gov (United States)

    1935-01-31

    183 B86- 33T SAE N.J .zn Co. B86-33T 1934 SAE N.J.Zn Cc,. Zamak 3N AllO;E Cl C2 Allo~ XXI 221 Zarnak 2 .A.llo;z XXIII .Allol XXIII 202 Zamak 2 O...2 includ.es Pb ,Fe, Cd, C:’. 3 special high gra1e ?:inc. • t • • ; -J TABLE II Chemical Composition for Zinc Alloy Nuuber Zam.ak 2 Zamak 3...was alco given regarding the aging of the alloys. The a1loy3 Aupplied were: Zamak 2, Zamak 3, Zamak 3-S (Stabilized to hasten contraction which

  2. Nanostructures of zinc oxide

    Directory of Open Access Journals (Sweden)

    Zhong Lin Wang

    2004-06-01

    Full Text Available Zinc oxide (ZnO is a unique material that exhibits semiconducting, piezoelectric, and pyroelectric multiple properties. Using a solid-vapor phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobows, nanobelts, nanowires, and nanocages of ZnO have been synthesized under specific growth conditions. These unique nanostructures unambiguously demonstrate that ZnO is probably the richest family of nanostructures among all materials, both in structures and properties. The nanostructures could have novel applications in optoelectronics, sensors, transducers, and biomedical science because it is bio-safe.

  3. Danxia Zinc Smelter started construction

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    <正>Zinc smelting project of Danxia Smelting Plant has a total investment of about RMB 4 billion, which is designed by Changsha Engineering & Research Institute of Nonferrous Metallurgy and planned to be implemented in three stages. The first stage 100,000 tons of electrolytic zinc improvement work is planned to be completed by the end of 2008. The second and third stages

  4. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intra- cavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  5. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  6. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    ZHAO YanYing; WANG Peng; ZHANG Wei; TIAN JinRong; WEI ZhiYi

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intracavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  7. Demonstrating the feasibility of heat extraction through sapphire fibers for the GW observatory KAGRA

    CERN Document Server

    Khalaidovski, Alexander; Chen, Dan; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Alan O; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka observatory. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise and suspended from multi-stage pendulums to reduce seismic noise. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as originating from thermal radiation will need to be extracted through the last suspension stage. This stage will consist of four thin sapphire fibers with larger heads necessary to connect the fibers to both the mirror and the upper stage. In this paper, we discuss heat conductivity measurements on different fiber candidates. While all fibers had a diameter of 1.6mm, different surface treatments and approaches to attach the heads were analyzed. Our measurements show that fibers fulfilling the basic KAGRA heat conductivity requirement of $\\kappa\\geq\\,$5000 W/m/K at 20K are technologically feasible.

  8. Design and construction of a tunable pulsed Ti:sapphire laser

    Science.gov (United States)

    Panahi, Omid; Nazeri, Majid; Tavassoli, Seyed Hassan

    2015-02-01

    In this paper, design and constr uction of a tunable pulsed Ti:sapphire laser and numerical solution of the corresponding rate equations are reported. Rate equations for a four-level system are written and their numerical solution is examined. Furthermore, an optical setup is introduced. In this setup, a Ti:sapphire crystal is longitudinally pumped by the second harmonics of a Q-Switched Nd:YAG laser, and a prism is used as a wavelength-selective element as well. This setup is established for two 10 and 50 % transmission output couplers. In case of using the 10 % coupler, the output energy of the laser, for the pump energy of 36 mJ, is pulses with 3.5 mJ energy and for the 50 % coupler, with 50 mJ of pump energy, pulses with 10 mJ energy are generated. A wavelength tuning range of more than 160 nm is possible. The repetition rate of this laser is 10 Hz and the temporal duration of the pulses is about 30 ns.

  9. A scalable pathway to nanostructured sapphire optical fiber for evanescent-field sensing and beyond

    Science.gov (United States)

    Chen, Hui; Tian, Fei; Kanka, Jiri; Du, Henry

    2015-03-01

    We here report an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an all-alumina nanostructured sapphire optical fiber (NSOF). The strategy entails fiber coating with metal aluminum followed by anodization to form alumina cladding of highly organized pore channel structure. Through experiments and numerical simulation, we demonstrate the utility and benefit of NSOF, analogous to all-silica microstructured optical fiber, for evanescent-field surface-enhanced Raman scattering (SERS) measurements. We experimentally reveal the feasibility of Ag nanoparticles (NPs)-enabled NSOF SERS sensing of 10-6 M Rhodamine 6G (R6G) after thermal treatment at 500 °C for 6 h by taking advantage of porous anodic aluminum oxide (AAO) structure to stabilize the Ag NPs. We show, via numerical simulations, that AAO cladding significantly increases the evanescent-field overlap, lower porosity of AAO results in higher evanescent-field overlap, and optimized AAO nanostructure yields greater SERS enhancement.

  10. Tunable integrated optical filters based on sapphire microspheres and liquid crystals

    Science.gov (United States)

    Gilardi, Giovanni; Yilmaz, Hasan; Sharif Murib, Mohammed; Asquini, Rita; d'Alessandro, Antonio; Serpengüzel, Ali; Beccherelli, Romeo

    2010-05-01

    We present an integrated optical narrowband electrically tunable filter based on the whispering gallery modes of sapphire microspheres and double ion-exchanged channel BK7 glass waveguides. Tuning is provided by a liquid crystal infiltrated between the spheres and the glass substrate. By suitably choosing the radii of the spheres and of the circular apertures, upon which the spheres are positioned, arrays of different filters can be realized on the same substrate with a low cost industrial process. We evaluate the performance in terms of quality factor, mode spacing, and tuning range by comparing the numerical results obtained by the numerical finite element modeling approach and with the analytical approach of the Generalized Lorenz-Mie Theory for various design parameters. By reorienting the LC in an external electrical field, we demonstrate the tuning of the spectral response of the sapphire microsphere based filter. We find that the value of the mode spacing remains nearly unchanged for the different values of the applied electric field. An increase of the applied electric field strength, changes the refractive index of the liquid crystal, so that for a fixed geometry the mode spacing remains unchanged.

  11. The Structure of Sapphire Implanted with Carbon at Room Temperature and 1000° C

    Science.gov (United States)

    Alves, E.; Marques, C.; Safran, G.; McHargue, Carl J.

    2009-03-01

    Carbon was implanted into sapphire at various temperatures as part of a study of the different defect structures produced by a series of light ions. Implantations were made with 150 keV ions to fluences of 1×1016 and 1×1017ions/cm2 at room temperature (RT) and 1000° C. The defect structures were characterized using Rutherford backscattering-channeling (RBS-C) and transmission electron microscopy (TEM). The RBS-C spectra indicated low residual disorder for RT implantation at 1×1016 C+/cm2. The de-channeling approached the random value at 1×1017 C+/cm2 and the TEM examination revealed a buried amorphous layer containing embedded sapphire nanocrystals. Damaged layers containing planar defects generally aligned parallel to the surface surrounded this layer. The RBS-C spectra for the sample implanted at 1000° C with 1×1017C+/cm2 suggested a highly damaged but crystalline surface that was confirmed by TEM micrographs.

  12. Study of the defects in GaN epitaxial films grown on sapphire by HVPE

    Science.gov (United States)

    Liu, Zhanhui; Xiu, Xiangqian; Chen, Lin; Zhang, Rong; Xie, Zili; Han, Ping; Shi, Yi; Gu, Shulin; Zheng, Youdou

    2008-02-01

    In this paper, the defects in hexagonal GaN epitaxial layers grown on (0001) sapphire (Al IIO 3) substrates by HVPE with a horizontal tube reactor had been studied. The GaN epitaxial layers were etched by means of defect-selective etching (Orthodox etching in molten KOH). The samples were characterized by Scanning Electron Microscopy (SEM) and Cathodoluminescence spectra (CL). From surface morphology and cross-sectional images, the defects could be divided into various types: cracks, low angle grain boundary (LAGB), nano-pipes and dislocations. These different defects were discussed. The cracks were proposed as related to the strain. And the strain could not only come from the lattice mismatch and thermal mismatch between sapphire and GaN layer in their interface, but also from the HVPE growth process. It was found that these screw, mixed and edge type dislocations formed small hexagonal pits after etching. Some pits would be observed in the area near LAGB. Additionally, by CL mapping technique, some non-radiative recombination centers without surface terminations could be probed optically.

  13. Gold wetting effects on sapphire irradiated with GeV uranium ions

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, S.M.M. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Canut, B. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Fornazero, J. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Thevenard, P. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Toulemonde, M. [Centre Interdisciplinaire de Recherche avec les Ions Lourds (CIRIL), Boulevard A. Becquerel, 14040 Caen Cedex (France)

    1997-02-01

    Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated with {sup 238}U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of {approx}80 K, with fluences ranging from 1.2 x 10{sup 12} to 2.5 x 10{sup 12} ions cm{sup -2}. After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.).

  14. Atomic fountain clock with very high frequency stability employing a pulse-tube-cryocooled sapphire oscillator.

    Science.gov (United States)

    Takamizawa, Akifumi; Yanagimachi, Shinya; Tanabe, Takehiko; Hagimoto, Ken; Hirano, Iku; Watabe, Ken-ichi; Ikegami, Takeshi; Hartnett, John G

    2014-09-01

    The frequency stability of an atomic fountain clock was significantly improved by employing an ultra-stable local oscillator and increasing the number of atoms detected after the Ramsey interrogation, resulting in a measured Allan deviation of 8.3 × 10(-14)τ(-1/2)). A cryogenic sapphire oscillator using an ultra-low-vibration pulse-tube cryocooler and cryostat, without the need for refilling with liquid helium, was applied as a local oscillator and a frequency reference. High atom number was achieved by the high power of the cooling laser beams and optical pumping to the Zeeman sublevel m(F) = 0 employed for a frequency measurement, although vapor-loaded optical molasses with the simple (001) configuration was used for the atomic fountain clock. The resulting stability is not limited by the Dick effect as it is when a BVA quartz oscillator is used as the local oscillator. The stability reached the quantum projection noise limit to within 11%. Using a combination of a cryocooled sapphire oscillator and techniques to enhance the atom number, the frequency stability of any atomic fountain clock, already established as primary frequency standard, may be improved without opening its vacuum chamber.

  15. Ultra stable and very low noise signal source using a cryocooled sapphire oscillator for VLBI

    CERN Document Server

    Nand, Nitin R; Ivanov, Eugene N; Santarelli, Giorgio

    2011-01-01

    Here we present the design and implementation of a novel frequency synthesizer based on low phase noise digital dividers and a direct digital synthesizer. The synthesis produces two low noise accurate and tunable signals at 10 MHz and 100 MHz. We report on the measured residual phase noise and frequency stability of the synthesizer, and estimate the total frequency stability, which can be expected from the synthesizer seeded with a signal near 11.2 GHz from an ultra-stable cryocooled sapphire oscillator. The synthesizer residual single sideband phase noise, at 1 Hz offset, on 10 MHz and 100 MHz signals, respectively, were measured to be -135 dBc/Hz and -130 dBc/Hz. Their intrinsic frequency stability contributions, on the 10 MHz and 100 MHz signals, respectively, were measured as sigma_y = 9 x 10^-15 and sigma_y = 2.2 x 10^-15, at 1 s integration time. The Allan Deviation of the total fractional frequency noise on the 10 MHz and 100 MHz signals derived from the synthesizer with the cryocooled sapphire oscilla...

  16. DC-powered Fe3+:sapphire Maser and its Sensitivity to Ultraviolet Light

    CERN Document Server

    Oxborrow, Mark; Kersalé, Yann; Giordano, Vincent

    2010-01-01

    The zero-field Fe3+:sapphire whispering-gallery-mode maser oscillator exhibits several alluring features: Its output is many orders of magnitude brighter than that of an active hydrogen maser and thus far less degraded by spontaneous-emission (Schawlow-Townes) and/or receiving-amplifier noise. Its oscillator loop is confined to a piece of mono-crystalline rock bolted into a metal can. Its quiet amplification combined with high resonator Q provide the ingredients for exceptionally low phase noise. We here concentrate on novelties addressing the fundamental conundrums and technical challenges that impede progress. (1) Roasting: The "mase-ability" of sapphire depends significantly on the chemical conditions under which it is grown and heat-treated. We provide some fresh details and nuances here. (2) Simplification: This paper obviates the need for a Ka-band synthesizer: it describes how a 31.3 GHz loop oscillator, operating on the preferred WG pump mode, incorporating Pound locking, was built from low-cost compo...

  17. Materials processing by use of a Ti:Sapphire laser with automatically-adjustable pulse duration

    Science.gov (United States)

    Kamata, M.; Imahoko, T.; Ozono, K.; Obara, M.

    We have developed an automatic pulsewidth-adjustable femtosecond Ti:Sapphire laser system that can generate an output of 50 fs-1 ps in duration, and sub-mJ/pulse at a repetition rate of 1 kpps. The automatic pulse compressor enables one to control the pulsewidth in the range of 50 fs-1 ps by use of a personal computer (PC). The compressor can change the distance in-between and the tilt angle of the grating pairs by use of two stepping motors and two piezo-electric transducer(PZT) driven actuators, respectively. Both are controlled by a PC. Therefore, not only control of the pulsewidth, but also of the optical chirp becomes easy. By use of this femtosecond laser system, we fabricated a waveguide in fused quartz. The numerical aperture is chosen to 0.007 to loosely focus the femtosecond laser. The fabricated waveguides are well controllable by the incident laser pulsewidth. We also demonstrated the ablation processing of hydroxyapatite (Ca10(PO4)6(OH)2), which is a key component of human tooth and human bone for orthopedics and dentistry. With pulsewidth tunable output from 50 fs through 2 ps at 1 kpps, the chemical content of calcium and phosphorus is kept unchanged before and after 50-fs-2-ps laser ablation. We also demonstrated the precise ablation processing of human tooth enamel with 2 ps Ti:Sapphire laser.

  18. Comparative pathogenicity of four strains of Aleutian disease virus for pastel and sapphire mink.

    Science.gov (United States)

    Hadlow, W J; Race, R E; Kennedy, R C

    1983-09-01

    Information was sought on the comparative pathogenicity of four North American strains (isolates) of Aleutian disease virus for royal pastel (a non-Aleutian genotype) and sapphire (an Aleutian genotype) mink. The four strains (Utah-1, Ontario [Canada], Montana, and Pullman [Washington]), all of mink origin, were inoculated intraperitoneally and intranasally in serial 10-fold dilutions. As indicated by the appearance of specific antibody (counterimmunoelectrophoresis test), all strains readily infected both color phases of mink, and all strains were equally pathogenic for sapphire mink. Not all strains, however, regularly caused Aleutian disease in pastel mink. Infection of pastel mink with the Utah-1 strain invariably led to fatal disease. Infection with the Ontario strain caused fatal disease nearly as often. The Pullman strain, by contrast, almost never caused disease in infected pastel mink. The pathogenicity of the Montana strain for this color phase was between these extremes. These findings emphasize the need to distinguish between infection and disease when mink are exposed to Aleutian disease virus. The distinction has important implications for understanding the natural history of Aleutian disease virus infection in ranch mink.

  19. Characteristics and kinetics of laser-pumped Ti:Sapphire oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Eggleston, J.M.; De Shazer, L.G.; Kangas, K.W.

    1988-06-01

    The experimental performance of a gain-switched Ti:Sapphire laser oscillator pumped by a frequency-doubled Q-switched Nd:YAG laser system is presented for a variety of operating conditions. A theoretical model developed for this oscillator predicts well its performance. In particular, the observed curved input-output energy plots for the oscillator result from the kinetics of gain switching and fluorescence decay during the gain buildup period. Fluorescence decay also produces observed oscillator thresholds higher than those normally predicted by the standard gain-equals-loss condition. Gain-switched parasitic modes, with a higher threshold but shorter roundtrip time than the resonator mode, cause the resonator mode to oscillate only over a finite range of pump energies. Also, spectroscopic investigations show that the Ti:Sapphire cross-section spectrum is well fit by a Poisson distribution, giving a peak cross section of 3 x 10/sup -19/ cm/sup 2/ for the ..pi.. polarization.

  20. A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

    Science.gov (United States)

    Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Suria, Ateeq J.; Chapin, Caitlin A.; Senesky, Debbie G.

    2016-09-01

    A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

  1. Tunable Single-Frequency Intracavity Frequency-Doubled Ti:Sapphire Laser around 461 nm

    Institute of Scientific and Technical Information of China (English)

    李凤琴; 石柱; 李永民; 彭堃墀

    2011-01-01

    We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser.The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours.The frequency stability is better than ±2.22 MHz over 10min when the laser is locked to a confocal Fabry-Perot cavity.A three-plate birefringent filter allows for the tunable range from 457nm to 467nm,which covers the absorption line of the strontium atoms(460.86nm).%We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser. The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours. The frequency stability is better than ±2.22MHz over lOmin when the laser is locked to a confocal Fabry-Perot cavity. A three-plate birefringent filter allows for the tunable range from 457nm to 467 nm, which covers the absorption line of the strontium atoms (460.86 nm).

  2. Cytocompatibility of direct water synthesized cadmium selenide quantum dots in colo-205 cells

    Science.gov (United States)

    Rodriguez-Torres, Marcos R.; Velez, Christian; Zayas, Beatriz; Rivera, Osvaldo; Arslan, Zikri; Gonzalez-Vega, Maxine N.; Diaz-Diestra, Daysi; Beltran-Huarac, Juan; Morell, Gerardo; Primera-Pedrozo, Oliva M.

    2015-06-01

    Cadmium selenide quantum dots (CdSe QDs), inorganic semiconducting nanocrystals, are alluring increased attraction due to their highly refined chemistry, availability, and super tunable optical properties suitable for many applications in different research areas, such as photovoltaics, light-emitting devices, environmental sciences, and nanomedicine. Specifically, they are being widely used in bio-imaging in contrast to organic dyes due to their high brightness and improved photo-stability, and their ability to tune their absorption and emission spectra upon changing the crystal size. The production of CdSe QDs is mostly assisted by trioctylphosphine oxide compound, which acts as solvent or solubilizing agent and renders the QDs soluble in organic compounds (such as toluene, chloroform, and hexane) that are highly toxic. To circumvent the toxicity-related factor in CdSe QDs, we report the synthesis of CdSe QDs capped with thioglycolic acid (TGA) in an aqueous medium, and their biocompatibility in colo-205 cancer cells. In this study, the [Cd2+]/[TGA] ratio was adjusted to 11:1 and the Se concentration (10 and 15 mM) was monitored in order to evaluate its influence on the optical properties and cytocompatibility. QDs resulted to be quite stable in water (after purification) and RPMI cell medium and no precipitation was observed for long contact times, making them appealing for in vitro experiments. The spectroscopy analysis, advanced electron microscopy, and X-ray diffractometry studies indicate that the final products were successfully formed exhibiting an improved optical response. Colo-205 cells being exposed to different concentrations of TGA-capped CdSe QDs for 12, 24, and 48 h with doses ranging from 0.5 to 2.0 mM show high tolerance reaching cell viabilities as high as 93 %. No evidence of cellular apoptotic pathways was observed as pointed out by our Annexin V assays at higher concentrations. Moreover, confocal microscopy analysis conducted to evaluate the

  3. Cytocompatibility of direct water synthesized cadmium selenide quantum dots in colo-205 cells

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Torres, Marcos R. [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States); Velez, Christian; Zayas, Beatriz [Universidad Metropolitana, ChemTox Laboratory, School of Environmental Affairs (United States); Rivera, Osvaldo [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States); Arslan, Zikri [Jackson State University, Department of Chemistry (United States); Gonzalez-Vega, Maxine N. [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States); Diaz-Diestra, Daysi; Beltran-Huarac, Juan; Morell, Gerardo [University of Puerto Rico, Molecular Science Research Center (United States); Primera-Pedrozo, Oliva M., E-mail: oprimera1@suagm.edu [Universidad Metropolitana, Nanomaterials Science Laboratory, School of Science and Technology (United States)

    2015-06-15

    Cadmium selenide quantum dots (CdSe QDs), inorganic semiconducting nanocrystals, are alluring increased attraction due to their highly refined chemistry, availability, and super tunable optical properties suitable for many applications in different research areas, such as photovoltaics, light-emitting devices, environmental sciences, and nanomedicine. Specifically, they are being widely used in bio-imaging in contrast to organic dyes due to their high brightness and improved photo-stability, and their ability to tune their absorption and emission spectra upon changing the crystal size. The production of CdSe QDs is mostly assisted by trioctylphosphine oxide compound, which acts as solvent or solubilizing agent and renders the QDs soluble in organic compounds (such as toluene, chloroform, and hexane) that are highly toxic. To circumvent the toxicity-related factor in CdSe QDs, we report the synthesis of CdSe QDs capped with thioglycolic acid (TGA) in an aqueous medium, and their biocompatibility in colo-205 cancer cells. In this study, the [Cd{sup 2+}]/[TGA] ratio was adjusted to 11:1 and the Se concentration (10 and 15 mM) was monitored in order to evaluate its influence on the optical properties and cytocompatibility. QDs resulted to be quite stable in water (after purification) and RPMI cell medium and no precipitation was observed for long contact times, making them appealing for in vitro experiments. The spectroscopy analysis, advanced electron microscopy, and X-ray diffractometry studies indicate that the final products were successfully formed exhibiting an improved optical response. Colo-205 cells being exposed to different concentrations of TGA-capped CdSe QDs for 12, 24, and 48 h with doses ranging from 0.5 to 2.0 mM show high tolerance reaching cell viabilities as high as 93 %. No evidence of cellular apoptotic pathways was observed as pointed out by our Annexin V assays at higher concentrations. Moreover, confocal microscopy analysis conducted to

  4. 21 CFR 73.1991 - Zinc oxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc...). It is principally composed of Zn. (2) Color additive mixtures for drug use made with zinc oxide...

  5. Zinc-bromine battery development

    Science.gov (United States)

    Richards, Lew; Vanschalwijk, Walter; Albert, George; Tarjanyi, Mike; Leo, Anthony; Lott, Stephen

    1990-05-01

    This report describes development activities on the zinc-bromine battery system conducted by Energy Research Corporation (ERC). The project was a cost-shared program supported by the U.S. Department of Energy and managed through Sandia. The project began in September 1985 and ran through January 1990. The zinc-bromine battery has been identified as a promising alternative to conventional energy storage options for many applications. The low cost of the battery reactants and the potential for long life make the system an attractive candidate for bulk energy storage applications, such as utility load leveling. The battery stores energy by the electrolysis of an aqueous zinc bromide salt to zinc metal and dissolved bromine. Zinc is plated as a layer on the electrode surface while bromine is dissolved in the electrolyte and carried out of the stack. The bromine is then extracted from the electrolyte with an organic complexing agent in the positive electrolyte storage tank. On discharge the zinc and bromine are consumed, regenerating the zinc bromide salt.

  6. Cytotoxicity of zinc in vitro.

    Science.gov (United States)

    Borovanský, J; Riley, P A

    1989-01-01

    The effect of zinc ions on B16 mouse melanoma lines, HeLa cells and I-221 epithelial cells was investigated in vitro in order to ascertain whether sensitivity to Zn2+ is a general feature of cells in vitro and in an attempt to elucidate the mechanism(s) of zinc cytotoxicity. The proliferation of B16, HeLa and I-221 cell lines was inhibited by 1.25 x 10(-4), 1.50 x 10(-4) and 1.50 x 10(-4) mol/l Zn2+, respectively. The free radical scavengers, methimazole and ethanol, did not suppress the toxicity of Zn2+, neither did superoxide dismutase or catalase. The addition of the chelating agent EDTA reduced the zinc cytotoxicity. It was possible to suppress the cytotoxicity of zinc by increasing the concentration of either Fe2+ or Ca2+ but not Mg2+, which suggests that a prerequisite for the toxic action of zinc is entry into cells using channels that are shared with iron or calcium. This view was supported by experiments in which transferrin intensified the cytotoxic action of zinc in serum-free medium. Another agent facilitating zinc transport, prostaglandin E2, inhibited the proliferation of the B16 melanoma cell line. There were no conspicuous differences in zinc toxicity to pigmented and unpigmented cells. The toxic effect of zinc in the cell systems studied exceeded that of iron, copper, manganese and cobalt in the same concentration range. In vitro, Zn2+ should be regarded as a dangerous cation.

  7. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  8. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-04-01

    This report summarizes technical progress over the first six months of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on analyzing and testing factors that impact performance degradation of the initially designed sensor prototype, including sensing element movement within the sensing probe and optical signal quality degradation. Based these results, a new version of the sensing system was designed by combining the sapphire disk sensing element and the single crystal zirconia right angle light reflector into one novel single crystal sapphire right angle prism. The new sensor prototype was tested up to 1650 C.

  9. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    Science.gov (United States)

    Sun, Haiding; Wu, Feng; tahtamouni, T. M. Al; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-10-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0 0 0 1) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  10. A sapphire tube atomizer for on-line atomization and in situ collection of bismuthine for atomic absorption spectrometry

    OpenAIRE

    Musil, S. (Stanislav); Dědina, J. (Jiří)

    2013-01-01

    Sapphire was tested as a new material for volatile species atomizers and bismuthine was chosen as a convenient model for volatile species. Its performance was compared with a quartz atomizer in both modes of operation - on-line atomization versus in situ collection.

  11. The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

    Science.gov (United States)

    Huang, Jen-Ching; Weng, Yung-Jin

    2014-01-01

    This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model.

  12. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  13. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  14. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  15. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, M.; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  16. Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; Eason, R.W.; Laversenne, L.; Moretti, P.; Borca, C.N.; Pollnau, M.

    2006-01-01

    Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near 780 nm was demonstrated at room temperature at an absorbed pump power t

  17. Ti:sapphire rib waveguides as single-transverse-mode broadband fluorescence sources for optical coherence tomography applications

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Ar+-beam-milled rib waveguides in pulsed-laser-deposited Ti:sapphire layers show broadband single transverse mode fluorescence emission at output powers up to 300 μW and propagation losses comparable to those in unstructured planar waveguide counterparts.

  18. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    Science.gov (United States)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2-CO gas atmosphere at 1923-1973 K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2-CO gas atmosphere. The thermodynamic principle of the N2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N2-CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  19. Tailoring the exciton fine structure of cadmium selenide nanocrystals with shape anisotropy and magnetic field.

    Science.gov (United States)

    Sinito, Chiara; Fernée, Mark J; Goupalov, Serguei V; Mulvaney, Paul; Tamarat, Philippe; Lounis, Brahim

    2014-11-25

    We use nominally spheroidal CdSe nanocrystals with a zinc blende crystal structure to study how shape perturbations lift the energy degeneracies of the band-edge exciton. Nanocrystals with a low degree of symmetry exhibit splitting of both upper and lower bright state degeneracies due to valence band mixing combined with the isotropic exchange interaction, allowing active control of the level splitting with a magnetic field. Asymmetry-induced splitting of the bright states is used to reveal the entire 8-state band-edge fine structure, enabling complete comparison with band-edge exciton models.

  20. Zinc Oxide Nanoparticle Photodetector

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available A zinc oxide (ZnO nanoparticle photodetector was fabricated using a simple method. Under a 5 V applied bias, its dark current and photocurrent were 1.98×10-8 and 9.42×10-7 A, respectively. In other words, a photocurrent-to-dark-current contrast ratio of 48 was obtained. Under incident light at a wavelength of 375 nm and a 5 V applied bias, the detector’s measured responsivity was 3.75 A/W. The transient time constants measured during the turn-ON and turn-OFF states were τON=204 s and τOFF=486 s, respectively.