WorldWideScience

Sample records for sapphire interface velocities

  1. Local dielectric permittivity profiles of sapphire/polypropylene interfaces

    Science.gov (United States)

    Yu, Liping; Ranjan, V.; Buongiorno Nardelli, M.; Bernholc, J.

    2009-03-01

    Recently, the need for high-power-density capacitors has stimulated research to develop composite dielectric materials with high-k nanoparticles embedded in a polymer matrix. In these materials, surfaces and interfaces may play an important role in determining the overall dielectric properties. We present first-principles investigations of the dielectric permittivity profiles across slabs and interfaces of sapphire(α-Al2O3)/isotactic-polypropylene(iPP). Our results indicate that the permittivity profile at interface strongly depends on the nanoscale averaging procedure. We propose an averaging model that ensures near-locality of the dielectric function. We find that: (i) the dielectric permittivity approaches the corresponding bulk value just a few atomic layers away from the interface or surface; (ii) the dielectric constant is enhanced at the surfaces of the isolated α-Al2O3 slabs, while no enhancement is observed at the iPP slab surfaces; and (iii) the dielectric transition at the αAl2O3/iPP is mainly confined in the αAl2O3 side.

  2. Interface defects in GaN/sapphire studied using Rutherford backscattering spectroscopy and channeling

    Indian Academy of Sciences (India)

    S K Sinha; P K Barhai

    2004-06-01

    GaN on sapphire was grown by MOCVD technique. Rutherford backscattering spectra together with channeling along [0 0 0 1] axis were recorded to study the defects at the interface. Detailed calculation shows that the defects at GaN/sapphire interface are due to dislocations which are distributed into the whole thickness of the film and are mainly aligned on the growth direction.

  3. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    Directory of Open Access Journals (Sweden)

    Sung Bo Lee

    2015-07-01

    Full Text Available In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al2O3 with the substitution of Si for Al.

  4. Influence of Thermal Conductivity on Interface Shape during Growth of Sapphire Crystal Using a Heat-Exchanger-Method

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The internal radiative contributed on heat transfer will enhance the heat transport inside the crystalline phase during growth the transparent sapphire crystal using a heat-exchanger-method (HEM). The artificially enhanced thermal conductivity of the solid to include the internal radiation effect was used in the present study. Numerical simulations using FIDAP were performed to investigate the effects of the thermal conductivity on the shape of the melt-crystal interface, the temperature distribution, and the velocity distribution. Heat transfer (including radiation) from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. In the present study, we focus on the influence of the conductivity on the shape of the melt-crystal interface. Therefore, the effect of the others growth parameters during the HEM crystal growth was neglected. For the homogenous conductivity (km=kS=k), the maximum convexity decreases as k increases and the rate of maximum convexity increases for a higher conductivity is less abrupt than for a lower conductivity. For the no homogenous conductivity (km≠kS), the higher solid's kS generates lower maximum convexity and the variation in maximum convexity was less abrupt for the different melt's km. The maximum convexity decreases slightly as the enhance conductivity of the sapphire crystal increases. The effects of the anisotropic conductivity of the sapphire crystal were also addressed. The maximum convexity of the melt-crystal interface decreases when the radial conductivity (ksr) of the crystal increases. The maximum convexity increases as the axial conductivity (ksz) of the crucible increases.

  5. Layering of [BMIM]+-based ionic liquids at a charged sapphire interface.

    Science.gov (United States)

    Mezger, Markus; Schramm, Sebastian; Schröder, Heiko; Reichert, Harald; Deutsch, Moshe; De Souza, Emerson J; Okasinski, John S; Ocko, Benjamin M; Honkimäki, Veijo; Dosch, Helmut

    2009-09-07

    The structure of two model room temperature ionic liquids, [BMIM](+)[PF(6)](-) and [BMIM](+)[BF(4)](-), near the solid/liquid interface with charged Al(2)O(3)(0001) (sapphire) was determined with subnanometer resolution by high energy (72.5 keV) x-ray reflectivity. [BMIM](+)[PF(6)](-) exhibits alternately charged, exponentially decaying, near-surface layering. By contrast, the smaller-anion compound, [BMIM](+)[BF(4)](-), shows only a single layer of enhanced electron density at the interface. The different layering behaviors, and their characteristic length scales, correspond well to the different bulk diffraction patterns, also measured in this study. Complementary measurements of the surface and interface energies showed no significant different between the two RTILs. The combined bulk-interface results support the conclusion that the interfacial ordering is dominated by the same electrostatic ion-ion interactions dominating the bulk correlations, with hydrogen bonding and dispersion interactions playing only a minor role.

  6. Thermal Conductance through Sapphire-Sapphire Bonding

    Science.gov (United States)

    Suzuki, T.; Tomaru, T.; Haruyama, T.; Shintomi, T.; Uchinyama, T.; Miyoki, S.; Ohashi, M.; Kuroda, K.

    2003-07-01

    Thermal conductance on sapphire-sapphire bonded interface has been investigated. Two pieces of single crystal sapphire bar with square cross section were bonded together by adhesion free bonding. In two sections of the bar, thermal conductivity was measured between 5 K to 300K. One section contains a bonded interface and the other section measured a thermal conductivity of the sapphire as a reference. No significant thermal resistance due to bonded interface was found from this measurement. Obtained thermal conductivity reaches κ 1 × 104 [W/m·K] in temperature range of T = 20 ˜ 30 K which is a planned operating temperature of a cryogenic mirror of the Large scale Cryogenic Gravitational wave telescope. It looks promising for sapphire bonding technique to improve a heat transfer from a large cryogenic mirror to susp ension wires.

  7. Influence of the crucible geometry on the shape of the melt crystal interface during growth of sapphire crystal using a heat exchanger method

    Science.gov (United States)

    Chen, Jyh-Chen; Lu, Chung-Wei

    2004-05-01

    Computer simulations using the commercial code FIDAP, which is based on finite element techniques, were performed to investigate the effect of the shape of the crucible on the temperature distribution, velocity distribution and shape of the melt-crystal interface, during the application of the heat exchanger method (HEM) of growing sapphire crystals. Heat transfer from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. Cylindrical crucibles with differently curved corners at their base are considered. The curved base of the crucible decreases the convexity of the melt-crystal interface and suppresses the appearance of "hot spots". A hemispherically shaped crucible base yields the lowest maximum convexity. The variation in convexity of the melt-crystal interface is less abrupt for a cylindrical crucible with curved corners at the base than one without curved corners. The effects of the thickness and the conductivity of the crucible are also addressed. The convexity of the melt-crystal interface decreases as the thickness of the crucible wall increases. The convexity also declines as the conductivity of the crucible increases.

  8. Numerical investigation of factors affecting the shape of the crystal-melt interface in edge-defined film-fed growth of sapphire crystals

    Science.gov (United States)

    Stelian, C.; Barthalay, N.; Duffar, T.

    2017-07-01

    Numerical modeling is used to investigate the shape of the crystal-melt interface in edge-defined film-fed growth (EFG) of large size sapphire rods and sheets. The present analysis shows that the temperature distribution in the meniscus is significantly affected by the internal radiative exchanges in the sapphire crystal. 2D axisymmetric computations performed in the case of sapphire rods, show a concave shape of the interface for opaque crystals, and a convex shaped interface for semi-transparent crystals. The temperature gradient across the meniscus increases significantly in the case which accounts for the internal radiative effect in the crystal. Large temperature differences along the free surface of the meniscus generate intense Marangoni flow, which can influence the shape of the growth interface. In this case, the meniscus height increases, producing instabilities in the growth process. The effect of die geometry on the interface shape is analyzed by increasing the angle between the working edges of the die. Computations shows that the interface curvature decreases as this angle increases, but the solidification isotherm moves up, leading to an increased meniscus height. 3D modeling is applied to investigate the EFG growth of large size sapphire sheets. Numerical results show a non-uniform temperature distribution in the meniscus, and a complex 3D flow pattern. However, the intensity of the flow is low in this case, having no influence on the temperature field and interface shape.

  9. Surface Acoustic Wave Velocity and Electromechanical Coupling Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapour Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    CHEN Zhen; LI Hong-Lang; YAN Li; CHEN Xiao-Yang; LU Da-Cheng; WANG Xiao-Hui; LIU Xiang-Lin; HAN Pei-De; YUAN Hai-Rong; WANG Du; WANG Zhan-Guo; HE Shi-Tang

    2001-01-01

    High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapour phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital trans ducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667m/s and 1.9% by the pulse method.

  10. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

    2016-06-06

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  11. Surface tension of liquid Al-Cu and wetting at the Cu/Sapphire solid-liquid interface

    Science.gov (United States)

    Schmitz, J.; Brillo, J.; Egry, I.

    2014-02-01

    For the study of the interaction of a liquid alloy with differently oriented single crystalline sapphire surfaces precise surface tension data of the liquid are fundamental. We measured the surface tension of liquid Al-Cu contactlessly on electromagnetically levitated samples using the oscillating drop technique. Data were obtained for samples covering the entire range of composition and in a broad temperature range. The surface tensions can be described as linear functions of temperature with negative slopes. Moreover, they decrease monotonically with an increase of aluminium concentration. The observed behaviour with respect to both temperature and concentration is in agreement with a thermodynamic model calculation using the regular solution approximation. Surface tensions were used to calculate interfacial energies from the contact angles of liquid Cu droplets, deposited on the C(0001), A(11-20), R(1-102) surfaces of an α-Al2O3 substrate. The contact angles were measured by means of the sessile drop method at 1380 K. In the Cu/α-Al2O3 system, no anisotropy is evident neither for the contact angles nor for the interfacial energies of different surfaces. The work of adhesion of this system is isotropic, too.

  12. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series...... of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  13. Liquid concentration distribution and planar interface instability at an abruptly changing pulling velocity in directional solidification

    Institute of Scientific and Technical Information of China (English)

    LI ShuangMing; FU HengZhi

    2007-01-01

    Liquid concentration distribution is seriously affected by an abruptly changing pulling velocity under directional solidification. Theoretical and numerical investigations indicate that at the pulling velocity jumping from V0 to V, the solidification system does not achieve the pulling velocity V immediately, and it goes through a non-steady-state transition zone. As the pulling velocity abruptly increases (V/V0 > 1), interface liquid concentration firstly increases to the maximum and then decreases to the steady-state value. The magnitude of interface liquid concentration at the beginning increases with V/V0, the initial pulling velocity V0 and the temperature gradient GL in the liquid. At the same time, solute diffusion length reduces with V/V0 and GL. In contrast, the minimum of interface liquid concentration falls with V/V0 at the pulling velocity decreasing abruptly. As the interface liquid concentration enriched at V/V0 > 1 is more than the value required for the planar interface to keep stable, the solid/liquid interface may become unstable. The analytical results are in agreement with the numerical calculation results of Al-2%Cu alloy.

  14. Liquid concentration distribution and planar interface instability at an abruptly changing pulling velocity in directional solidification

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Liquid concentration distribution is seriously affected by an abruptly changing pulling velocity under directional solidification. Theoretical and numerical investi-gations indicate that at the pulling velocity jumping from V0 to V, the solidification system does not achieve the pulling velocity V immediately, and it goes through a non-steady-state transition zone. As the pulling velocity abruptly increases (V/V0 > 1), interface liquid concentration firstly increases to the maximum and then de-creases to the steady-state value. The magnitude of interface liquid concentration at the beginning increases with V/V0, the initial pulling velocity V0 and the tem-perature gradient GL in the liquid. At the same time, solute diffusion length reduces with V/V0 and GL. In contrast, the minimum of interface liquid concentration falls with V/V0 at the pulling velocity decreasing abruptly. As the interface liquid con-centration enriched at V/V0 > 1 is more than the value required for the planar inter-face to keep stable, the solid/liquid interface may become unstable. The analytical results are in agreement with the numerical calculation results of Al-2%Cu alloy.

  15. Smart Laser Interferometer with Electrically Tunable Lenses for Flow Velocity Measurements through Disturbing Interfaces

    Directory of Open Access Journals (Sweden)

    Jürgen W. Czarske

    2015-01-01

    Full Text Available Interferometric velocity measurements are of great importance at flow investigations. However, the laser beams can be distorted at the interfaces between optical media of different refractive indices. Temporal fluctuations of these distortions will cause a deterioration of the laser interferometer signals. We have harnessed the power of programmable photonics devices to eliminate this signal deterioration. Non-invasive flow velocity measurements through a rapidly fluctuating media interface with large strokes of about 100 microns are presented. Our work represents a paradigm shift for interferometric velocity measurement techniques from using static to dynamic optical elements.

  16. Structure of misfit dislocations in niobium-sapphire interfaces and strength of interfacial bonding: An atomistic study

    Energy Technology Data Exchange (ETDEWEB)

    Levay, A.; Moebus, G.; Vitek, V.; Ruehle, M.; Tichy, G.

    1999-11-12

    The formation of networks of misfit dislocations is investigated at the (0001){sub Al{sub 2}O{sub 3}}{parallel}(111){sub Nb} interface using a recently proposed approach which employs a very simple pair-potential to describe interaction between the metal and the substrate that contains the strength of interfacial adhesion as a parameter. The calculations demonstrate how the strength of bonding between the two materials decides both the form of the network and the atomic structure of the cores of these dislocations. At the same time it reveals that diffusion is essential for the formation of the observed triangular network of 1/2{l{underscore}angle}111{r{underscore}angle} dislocations. The calculated structures are then used to investigate related high resolution electron microscope (HREM) images using a multislice technique. In these simulations translational symmetry along the electron beam was not assumed but for each slice of material along the beam different sub-structures were used. This allowed us to investigate fully the effect of the dislocation intersections upon the images of the dislocation cores. Their effect is, indeed, considerable if an intersection is in the region producing the image but if not, the images of the cores of misfit dislocations are affected only marginally and HREM can capture fine details of the core structure. A direct comparison of an experimental observation in Mayer and co-workers with the present simulations demonstrates this ability.

  17. The field-dependent interface recombination velocity for organic-inorganic heterojunction

    Science.gov (United States)

    Szmytkowski, Jędrzej

    2016-10-01

    We have derived an analytical formula which describes the field-dependent interface recombination velocity for the boundary of two materials characterized by different permittivities. The interface recombination of charge carriers has been considered in the presence of image force Schottky barrier. We suggest that this effect may play an important role in the loss of current for organic-inorganic hybrid heterojunctions. It has been proved that the presented method is a generalization of the Scott-Malliaras model of surface recombination at the organic/metal interface. We also discuss that this model is intuitively similar but not analogous to the Langevin mechanism of bulk recombination.

  18. Interferometric velocity measurements through a fluctuating gas-liquid interface employing adaptive optics.

    Science.gov (United States)

    Büttner, Lars; Leithold, Christoph; Czarske, Jürgen

    2013-12-16

    Optical transmission through fluctuating interfaces of mediums with different refractive indexes is limited by the occurring distortions. Temporal fluctuations of such distortions deteriorate optical measurements. In order to overcome this shortcoming we propose the use of adaptive optics. For the first time, an interferometric velocity measurement technique with embedded adaptive optics is presented for flow velocity measurements through a fluctuating air-water interface. A low order distortion correction technique using a fast deformable mirror and a Hartmann-Shack camera with high frame rate is employed. The obtained high control bandwidth enables precise measurements also at fast fluctuating media interfaces. This methodology paves the way for several kinds of optical flow measurements in various complex environments.

  19. Interface structure, chemistry and properties of NiAl composites fabricated from matrix-coated single-crystalline Al{sub 2}O{sub 3} fibres (sapphire) with and without an hBN interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Hu, W. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany)]. E-mail: hu@imm.rwth-aachen.de; Weirich, T. [Central Facility for Electron Microscopy, RWTH Aachen University (Germany); Hallstedt, B. [Materials Chemistry, RWTH Aachen University (Germany); Chen, H. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany)]. E-mail: chen@imm.rwth-aachen.de; Zhong, Y. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany); Gottstein, G. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany)

    2006-05-15

    NiAl composites with and without an hBN interlayer were produced from matrix-coated single-crystalline Al{sub 2}O{sub 3} fibres (sapphire) by diffusion bonding. The evolution of interface structure and chemistry during the fabrication processes (fibre coating, diffusion bonding and embedded casting) was characterized by electron microscopy. The interface shear stress for complete debonding was measured by fibre push-out tests at room temperature. Interface structural analysis by transmission electron microscopy demonstrates that a high interface shear strength (about 230-250 MPa) in the composites without hBN interlayers is achieved by direct contact of NiAl with aluminium oxide (intrinsic coherence). In the composites with hBN interlayers the boron nitride was partially (as-diffusion-bonded composite) or completely (as-cast composite) transformed to AlN owing to a chemical reaction with NiAl at high temperatures. The low interface shear strength (about 70 MPa) of the as-diffusion-bonded composites was caused by sliding of textured hBN basal planes. The low interface shear strength (about 75 MPa) of the as-cast composites was attributed to segregation of aluminium boride to triple junctions and grain boundaries of AlN. The interfacial reactions in the composites with hBN interlayers can be rationalized from thermodynamic calculations.

  20. Numerical computation of sapphire crystal growth using heat exchanger method

    Science.gov (United States)

    Lu, Chung-Wei; Chen, Jyh-Chen

    2001-05-01

    The finite element software FIDAP is employed to study the temperature and velocity distribution and the interface shape during a large sapphire crystal growth process using a heat exchanger method (HEM). In the present study, the energy input to the crucible by the radiation and convection inside the furnace and the energy output through the heat exchanger is modeled by the convection boundary conditions. The effects of the various growth parameters are studied. It is found that the contact angle is obtuse before the solid-melt interface touches the sidewall of the crucible. Therefore, hot spots always appear in this process. The maximum convexity decreases significantly when the cooling-zone radius (RC) increases. The maximum convexity also decreases significantly as the combined convection coefficient inside the furnace (hI) decreases.

  1. Interface Condition for the Darcy Velocity at the Water-oil Flood Front in the Porous Medium

    CERN Document Server

    Peng, Xiaolong; Liang, Baosheng

    2016-01-01

    Flood front is the jump interface where fluids distribute discontinuously, whose interface condition is the theoretical basis of a mathematical model of the multiphase flow in porous medium. The conventional interface condition at the jump interface is expressed as the continuous Darcy velocity and fluid pressure (named CVCM ). Our study has inspected this conclusions. First, it is revealed that the principle of mass conservation has no direct relation to the velocity conservation, and the former is not the true foundation of the later, because the former only reflects the kinetic characteristic of the fluid particles at one position(the interface), but not the neighborhood of the interface which required by the later. Then the reasonableness of CVCM is queried from the following three aspects:(1)Using Mukat's two phase seepage equation and the mathematical method of apagoge, we have disproved the continuity of each fluid velocity;(2)Since the analytical solution of the equation of Buckley-Leveret equations i...

  2. Benchmarking passive seismic methods of estimating the depth of velocity interfaces down to ~300 m

    Science.gov (United States)

    Czarnota, Karol; Gorbatov, Alexei

    2016-04-01

    In shallow passive seismology it is generally accepted that the spatial autocorrelation (SPAC) method is more robust than the horizontal-over-vertical spectral ratio (HVSR) method at resolving the depth to surface-wave velocity (Vs) interfaces. Here we present results of a field test of these two methods over ten drill sites in western Victoria, Australia. The target interface is the base of Cenozoic unconsolidated to semi-consolidated clastic and/or carbonate sediments of the Murray Basin, which overlie Paleozoic crystalline rocks. Depths of this interface intersected in drill holes are between ~27 m and ~300 m. Seismometers were deployed in a three-arm spiral array, with a radius of 250 m, consisting of 13 Trillium Compact 120 s broadband instruments. Data were acquired at each site for 7-21 hours. The Vs architecture beneath each site was determined through nonlinear inversion of HVSR and SPAC data using the neighbourhood algorithm, implemented in the geopsy modelling package (Wathelet, 2005, GRL v35). The HVSR technique yielded depth estimates of the target interface (Vs > 1000 m/s) generally within ±20% error. Successful estimates were even obtained at a site with an inverted velocity profile, where Quaternary basalts overlie Neogene sediments which in turn overlie the target basement. Half of the SPAC estimates showed significantly higher errors than were obtained using HVSR. Joint inversion provided the most reliable estimates but was unstable at three sites. We attribute the surprising success of HVSR over SPAC to a low content of transient signals within the seismic record caused by low levels of anthropogenic noise at the benchmark sites. At a few sites SPAC waveform curves showed clear overtones suggesting that more reliable SPAC estimates may be obtained utilizing a multi-modal inversion. Nevertheless, our study indicates that reliable basin thickness estimates in the Australian conditions tested can be obtained utilizing HVSR data from a single

  3. Appropriate Formulations for Velocity and Pressure Calculations at Gas-liquid Interface with Collocated Variable Arrangement

    Science.gov (United States)

    Ito, Kei; Kunugi, Tomoaki

    A high-precision simulation algorithm for gas-liquid two-phase flows on unstructured meshes has been developed to simulate gas entrainment phenomenon in a sodium-cooled fast reactor. In this study, it became clear that unphysical behaviors near gas-liquid interfaces were caused by conventional algorithms. Then, physics-basis considerations were conducted for mechanical balances at gas-liquid interfaces to derive appropriate formulations. By defining momentum and velocity independently and developing the momentum transport equations for both gas and liquid phases, the physically appropriate formulation of momentum transport was derived, which eliminated the unphysical pressure distribution caused by the conventional formulation. In addition, the physically appropriate formulation was derived for the pressure gradient to satisfy the mechanical balances between pressure and surface tension at gas-liquid interfaces. As the validation test, the rising gas bubble in liquid was simulated by the developed simulation algorithm with the physically appropriate formulations, and the simulated terminal bubble shapes on the structured and highly-distorted unstructured meshes coincided with the experimental data under each simulation condition determined by the Morton and Eötvös numbers.

  4. Grain dynamics in compressed polycrystalline Al interfaces sliding at high velocities

    Science.gov (United States)

    Hammerberg, J. E.; Ravelo, R.; Germann, T. C.; Milhans, J.

    2017-01-01

    We discuss the relationship between grain structure and the frictional force for polycrystalline Al interfaces with grain sizes of 13, 20 and 50 nm as seen in large scale NonEquilibrium Molecular Dynamics (NEMD) simulations at nominal pressures of 15 GPa. Simulation sizes were 138 M (Million) atoms for the 13 and 20 nm grain size samples and 1.8 B (Billion) atoms for the 50 nm samples with times to 40 ns. We find that the frictional force in the steady state is independent of the initial grain size and that the grain distribution evolves to a dynamical steady state characterized by a sequence of grain growth and refinement events at very large local plastic strains and strain rates. Based upon these simulations, a meso/macro-scale model has been developed that reproduces the NEMD results for over two orders of magnitude in sliding velocity encompassing both solid and fluid regimes.

  5. Neutron Transmission through Sapphire Crystals: Experiments and Simulations

    OpenAIRE

    Rantsiou, Emmanouela; Filges, Uwe; Panzner, Tobias; Klinkby, Esben Bryndt

    2013-01-01

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Thosesimulations were part of the effort of validating and improving the newly developed interface between...

  6. Rain Erosion Behavior of Silicon Dioxide Films Prepared on Sapphire

    Institute of Scientific and Technical Information of China (English)

    Liping FENG; Zhengtang LIU; Wenting LIU

    2005-01-01

    Silicon dioxide (SiO2) films were prepared on sapphire (α-Al2O3) by radio frequency magnetron reactive sputtering in order to in crease both transmission and rain erosion resistant performance of infrared domes of sapphire. Composition and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD),respectively. The transmittance of uncoated and coated sapphire was measured using a Fourier transform infrared(FTIR) spectrometer. Rain erosion tests of the uncoated and coated sapphire were performed at 211 m/s impact velocity with an exposure time ranging from 1 to 8 min on a whirling arm rig. Results show that the deposited films can greatly increase the transmission of sapphire in mid-wave IR. After rain erosion test, decreases in normalized transmission were less than 1% for designed SiO2 films and the SiO2 coating was strongly bonded to the sapphire substrate. In addition, sapphires coated with SiO2 films had a higher transmittance than uncoated ones after rain erosion.

  7. Advanced thin dicing blade for sapphire substrate

    Directory of Open Access Journals (Sweden)

    Koji Matsumaru, Atsushi Takata and Kozo Ishizaki

    2005-01-01

    Full Text Available Advanced thin dicing blades for cutting sapphire were fabricated and evaluated for cutting performance with respect to dicing blade wear and meandering of cutting lines. Three kinds of different commercial blades were used to compare the cutting performance. These blades had the same thickness and the same diamond grain size. The matrix material of one dicing blade was nickel–phosphorus alloy and two other were a vitric material. Newly developed dicing blades consisted of a vitric material with pore. A dicing machine was used for cutting sapphire. Turning velocity, cutting depth and feeding rate were 20,000 min−1, 200 μm and 1 mm s−1, respectivity. Cutting directions were 110 and 010. All blades could cut 1000 mm and more in the 110 direction. On the other hand, commercial dicing blades generated meandering lines and were broken only by 50 mm of cutting length in 010 direction. Fabricated blade can cut 1000 mm and more in 010 direction. The wear of fabricated dicing blade was the largest in the dicing blades. Although cutting performance of commercial dicing blades depended on the sapphire orientation, that of fabricated blade was independent of the sapphire orientation. It has been confirmed that the fabricated dicing blade was kept a cutting ability by flash diamonds on the dicing blade surface, which were created by wear of blade during cutting sapphire. Low cutting ability of commercial blades increased cutting force between with increase of cutting length. The increased cutting force produced to bend a blade and cutting lines, and finally a fracture of blade.

  8. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  9. Recording of particles velocity spectrum at the shock impact on different viscosity interface of liquids

    Directory of Open Access Journals (Sweden)

    Fedorov A.V.

    2015-01-01

    Full Text Available The results of experiments concerning the study of cavitational mechanism of liquid failure in a wide range of shock loading are presented in this paper. Free surface velocity of liquids and velocity spectrum of particles and jets were recorded using PDV method [1], their size was also determined. The value of spall strength of distilled water was defined.

  10. Structure of shaped sapphire grown from multicapillary dies

    Science.gov (United States)

    Dobrovinskaya, E. R.; Litvinov, L. A.; Pischik, V. V.

    1990-07-01

    Peculiarities in grain structure development have been studied in sapphire crystals grown with multicapillary channels in the die to feed melt to the crystallization zone. A new mechanism of grain boundary formation based on gas-bubble collapse at the crystal-melt interface is proposed.

  11. World's largest sapphire for many applications

    Science.gov (United States)

    Khattak, Chandra P.; Shetty, Raj; Schwerdtfeger, C. Richard; Ullal, Saurabh

    2016-10-01

    Sapphire has been used for many high technology applications because of its excellent optical, mechanical, high temperature, abrasion resistance and dielectric properties. However, it is expensive and the volume of sapphire used has been limited. The potential sapphire requirements for LED and consumer electronic applications are very high. Emphasis has been on producing larger sapphire boules to achieve significant cost reductions so these applications are realized. World's largest sapphire boules, 500 mm diameter 300+kg, have been grown to address these markets.

  12. Critical velocity in phosphorus exchange processes across the sediment-water interface.

    Science.gov (United States)

    Wan, Jun; Wang, Ze; Li, Zhijie; Duan, Huiling; Hezhong, Yuan

    2013-10-01

    Sediments are ultimate sinks of nutrients in lakes that record the pollution history evolutionary processes, and anthropogenic activities of a lake. However, sediments are considered as inner sources of environmental factor changes such as the variation in hydrodynamic conditions because of the nutrients they release. How does this process happen? This study investigates a typical nutrient phosphorus (P) exchange among sediment, suspended particle matter (SPM), and water. Compared with numerical and experimental studies, this study confirms that the critical velocity that occurs at a lower flow rate state exists in the range of 7 to 15 cm/sec. Critical velocity below the critical flow rate promotes the migration of particulate phosphorus (PP) to the SPM. On the other hand, critical velocity above the critical flow rate promotes the release of PP in water.

  13. Microstructure and velocity of field-driven Ising interfaces moving under a soft stochastic dynamic.

    Science.gov (United States)

    Rikvold, Per Arne; Kolesik, M

    2003-06-01

    We present theoretical and dynamic Monte Carlo simulation results for the mobility and microscopic structure of (1+1)-dimensional Ising interfaces moving far from equilibrium in an applied field under a single-spin-flip "soft" stochastic dynamic. The soft dynamic is characterized by the property that the effects of changes in field energy and interaction energy factorize in the transition rate, in contrast to the nonfactorizing nature of the traditional Glauber and Metropolis rates "hard" dynamics). This work extends our previous studies of the Ising model with a hard dynamic and the unrestricted solid-on-solid (SOS) model with soft and hard dynamics. [P. A. Rikvold and M. Kolesik, J. Stat. Phys. 100, 377 (2000); J. Phys. A 35, L117 (2002); Phys. Rev. E 66, 066116 (2002).] The Ising model with soft dynamics is found to have closely similar properties to the SOS model with the same dynamic. In particular, the local interface width does not diverge with increasing field as it does for hard dynamics. The skewness of the interface at nonzero field is very weak and has the opposite sign of that obtained with hard dynamics.

  14. Influence of gas flow on thermal field and stress during growth of sapphire single crystal using Kyropoulos method

    Institute of Scientific and Technical Information of China (English)

    LI Jinquan; SU Xiaoping; NA Mujilatu; YANG Hai; LI Jianmin; YU Yunqi; MI Jianjun

    2006-01-01

    The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method.The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and von Mises stress were studied for the first time.It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper presents three ways to solve this problem.The temperature gradient and stress decreases significantly as the gas pressure increases.The convexity of the solid-liquid interface slightly increases when the gas pressure increases.Numerical analysis was used to optimize the hot zone design.

  15. Pumping of titanium sapphire laser

    Science.gov (United States)

    Jelínková, H.; Vaněk, P.; Valach, P.; Hamal, K.; Kubelka, J.; Škoda, V.; Jelínek, M.

    1993-02-01

    Two methods of Ti:Sapphire pumping for the generation of tunable laser radiation in the visible region were studied. For coherent pumping, the radiation of the second harmonic of a Nd:YAP laser was used and a maximum output energy of E out=4.5 mJ was reached from the Ti:Sapphire laser. For noncoherent pumping, two different lengths of flashlamp pulses were used and a maximum of E out=300 mJ was obtained. Preliminary estimations of the wavelength range of tunability were made.

  16. Ordered gold nanostructures on sapphire surfaces: Fabrication and optical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Konovko, A. A. [Moscow State University (Russian Federation); Smirnov, I. S. [Moscow State University of Electronics and Mathematics (Russian Federation); Roshchin, B. S.; Volkov, Yu. O. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Angelutz, A. A.; Andreev, A. V.; Shkurinov, A. P. [Moscow State University (Russian Federation); Kanevskii, V. M.; Asadchikov, V. E. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The possibilities of obtaining ordered gold nanoarrays on sapphire surfaces with oriented nanorelief are demonstrated. The structures are morphologically described using atomic force microscopy data. A study of the angular dependence of the reflectivity in the visible range of electromagnetic waves has revealed some features which are likely to indicate surface plasmon-polariton excitation at the air-gold interface under exposure to p-polarized radiation. The experimental results are found to be in good agreement with the theoretical calculations.

  17. Birefringence measurements in single crystal sapphire and calcite shocked along the a axis

    Science.gov (United States)

    Tear, Gareth R.; Chapman, David J.; Eakins, Daniel E.; Proud, William G.

    2017-01-01

    Calcite and sapphire were shock compressed along the direction (a axis) in a plate impact configuration. Polarimetery and Photonic Doppler Velocimetery (PDV) were used to measure the change in birefringence with particle velocity in the shock direction. Results for sapphire agree well with linear photoelastic theory and current literature showing a linear relationship between birefringence and particle velocity up to 310 m s-1. A maximum change in birefringence of 5% was observed. Calcite however showed anomolous behaviour with no detectable change in birefringence (less than 0.1%) over the range of particle velocities studied (up to 75 m s-1).

  18. Interface

    DEFF Research Database (Denmark)

    Computerens interface eller grænseflade har spredt sig overalt. Mobiltelefoner, spilkonsoller, pc'er og storskærme indeholder computere – men computere indbygges også i tøj og andre hverdagslige genstande, så vi konstant har adgang til digitale data. Interface retter fokus mod, hvordan den digita...

  19. Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; C.D. Beling; S. Fung

    2005-01-01

    @@ Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data,and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al+ ions, are also investigated. Studies on Al+ implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al+ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.

  20. Interface

    DEFF Research Database (Denmark)

    Computerens interface eller grænseflade har spredt sig overalt. Mobiltelefoner, spilkonsoller, pc'er og storskærme indeholder computere – men computere indbygges også i tøj og andre hverdagslige genstande, så vi konstant har adgang til digitale data. Interface retter fokus mod, hvordan den digitale...... kunst og kultur skabes, spredes og opleves igennem interfaces. Forfatterne undersøger og diskuterer interfacets æstetik, ideologi og kultur – og analyserer aktuel interfacekunst på tværs af musik, kunst, litteratur og film. Bogen belyser interfacets oprindelse i den kolde krigs laboratorier og dets...

  1. Hydrogen effect on the properties of sapphire

    Science.gov (United States)

    Mogilevsky, Radion N.; Sharafutdinova, Liudmila G.; Nedilko, Sergiy; Gavrilov, Valeriy; Verbilo, Dmitriy; Mittl, Scott D.

    2009-05-01

    Sapphire is a widely used material for optical, electronic and semiconductor applications due to its excellent optical properties and very high durability. Optical and mechanical properties of sapphire depend on many factors such as the starting materials that are used to grow crystals, methods to grow sapphire crystals, etc. Demand for highest purity and quality of sapphire crystals increased ten fold for the last several years due to new applications for this material. In this work we studied the effect of starting materials and crystal growth methods on the optical and mechanical properties of sapphire, especially concentrating on the effect of hydrogen on the properties of sapphire. It was found that the infrared (IR) absorption which is traditionally used to measure the hydrogen content in sapphire crystals cannot be reliably used and the data obtained by this method provides a much lower hydrogen concentration than actual. We have shown for the first time that Nuclear Magnetic Resonance techniques can be successfully used to determine hydrogen concentration in sapphire crystals. We have shown that hydrogen concentration in sapphire can reach thousands of ppm if these crystals are grown from Verneuil starting material or aluminum oxide powder. Alternatively, the hydrogen concentration is very low if sapphire crystals are grown from High Purity Densified Alumina (HPDA®) as a starting material. HPDA® is produced by EMT, Inc through their proprietary patented technology. It was found that optical and mechanical properties of sapphire crystals grown using EMT HPDA® starting material are much better than those sapphire crystals grown using a starting material of Verneuil crystals or aluminum oxide powder.

  2. Tamm plasmon-polariton with negative group velocity induced by a negative index meta-material capping layer at metal-Bragg reflector interface.

    Science.gov (United States)

    Liu, Cunding; Kong, Mingdong; Li, Bincheng

    2014-05-05

    Influence of a negative refractive index meta-material (NIM) capping layer on properties of Tamm plasmon-polariton at the interface of metal-Bragg reflector structure is investigated. Conditions for excitation of the plasmon-polariton is determined from reflectivity mapping calculation and analyzed with cavity mode theory. For specific thicknesses of capping layers, Tamm plasmon-polariton with negative group velocity is revealed in a wide region of frequency. Different from backward optical propagation induced by negative effective-group-refractive-index in dispersive media, negative group velocity of Tamm plasmon-polariton results from opposite signs of cross-section-integrated field energy and Poynting vector.

  3. Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

    Science.gov (United States)

    Lee, Jae-Hoon; Oh, Jeong-Tak; Park, Jin-Sub; Kim, Je-Won; Kim, Yong-Chun; Lee, Jeong-Wook; Cho, Hyung-Koun

    2006-06-01

    To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.

  4. interfaces

    Directory of Open Access Journals (Sweden)

    Dipayan Sanyal

    2005-01-01

    macroscopic conservation equations with an order parameter which can account for the solid, liquid, and the mushy zones with the help of a phase function defined on the basis of the liquid fraction, the Gibbs relation, and the phase diagram with local approximations. Using the above formalism for alloy solidification, the width of the diffuse interface (mushy zone was computed rather accurately for iron-carbon and ammonium chloride-water binary alloys and validated against experimental data from literature.

  5. Influence of Cr and W alloying on the fiber-matrix interfacial shear strength in cast and directionally solidified sapphire NiAl composites

    Science.gov (United States)

    Asthana, R.; Tiwari, R.; Tewari, S. N.

    1995-01-01

    Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.

  6. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  7. Benchmarking Passive Seismic Methods of Imaging Surface Wave Velocity Interfaces Down to 300 m — Mapping Murray Basin Thickness in Southeastern Australia

    Science.gov (United States)

    Gorbatov, A.; Czarnota, K.

    2015-12-01

    In shallow passive seismology it is generally thought that the spatial autocorrelation (SPAC) method is more robust than the horizontal over vertical spectral ratio (HVSR) method at resolving the depth to surface-wave velocity (Vs) interfaces. Here we present results of a field test of these two methods over ten drill sites in Victoria, Australia. The target interface is the base of Cenozoic unconsolidated to semi-consolidated clastic and/or carbonate sediments of the Murray Basin, which overlie Paleozoic crystalline rocks. Drilled depths of this interface are between 27 and 300 m. A three-arm spiral array, with a radius of 250 m, consisting of 13 Trillium compact broadband seismometers was deployed at each site for 7-21 hours. The Vs architecture beneath each site was determined through nonlinear inversion of HVSR and SPAC data using the neighborhood algorithm of Sambridge (1999) implemented in geopsy by Wathelet et al (2005). The HVSR technique yielded depth estimates, of the target interface (Vs > 1000 m/s), generally within 20% error. Successful estimates were even obtained at a site with an inverted velocity profile, where Quaternary basalts overlie Neogene sediments. Half of the SPAC estimates showed significantly higher errors than obtained using HVSR. Joint inversion provided the most reliable estimates but was unstable at three sites. We attribute the surprising success of HVSR over SPAC to a low content of transient signals within the seismic record caused by low degrees of anthropogenic noise at the benchmark sites. At a few sites SPAC curves showed clear overtones suggesting that more reliable SPAC estimates maybe obtained utilizing a multi modal inversion. Nevertheless, our study seems to indicate that reliable basin thickness estimates in remote Australia can be obtained utilizing HVSR data from a single seismometer, without a priori knowledge of the surface-wave velocity of the basin material, thereby negating the need to deploy cumbersome arrays.

  8. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  9. Sapphire Viewports for a Venus Probe Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed Phase 1 program will demonstrate that sapphire viewports are feasible for use in Venus probes. TvU's commercial viewport products have demonstrated that...

  10. Water velocity at water-air interface is not zero: Comment on "Three-dimensional quantification of soil hydraulic properties using X-ray computed tomography and image-based modeling" by Saoirse R. Tracy et al.

    Science.gov (United States)

    Zhang, X. X.; Fan, X. Y.; Li, Z. Y.

    2016-07-01

    Tracy et al. (2015, doi: 10.1002/2014WR016020) assumed in their recent paper that water velocity at the water-air interface is zero in their pore-scale simulations of water flow in 3-D soil images acquired using X-ray computed tomography. We comment that such a treatment is physically wrong, and explain that it is the water-velocity gradient in the direction normal to the water-air interface, rather than the water velocity, that should be assumed to be zero at the water-air interface if one needs to decouple the water flow and the air flow. We analyze the potential errors caused by incorrectly taking water velocity at the water-air interface zero based on two simple examples, and conclude that it is not physically sound to make such a presumption because its associated errors are unpredictable.

  11. Secondary particle emission from sapphire single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Minnebaev, K.F., E-mail: minnebaev@mail.ru [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Khvostov, V.V.; Zykova, E.Yu.; Tolpin, K.A. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Colligon, J.S. [Manchester Metropolitan University, Chester Street, Manchester M1 5GD (United Kingdom); Yurasova, V.E. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    Secondary ion emission from sapphire single crystal has been studied experimentally and by means of computer simulation. The particular oscillations of secondary ion energy spectra and two specific maxima of O{sup +} and Al{sup +} ions were observed under irradiation of (0001) sapphire face by 1 and 10 keV Ar{sup +} ions. We have explained this by the interplay of the charge exchange processes between moving particles and solids. The existence of two maxima in energy spectra of O{sup +} and Al{sup +} secondary ions can be also connected with special features of single-crystal sputtering: the low-energy peak can be formed by random sputtering and the high-energy peak from focusing collisions. In addition some similarity was found between the positions of low-energy maximum in energy spectra of Al{sup +} ions emitted from sapphire and the principal maxima of Al{sup +} ions ejected from the aluminum single crystal. This indicates a possibility to explain the presence of low-energy maximum in energy spectra of secondary ions ejecting from sapphire by emission of Al{sup +} ions from aluminum islands appearing in a number of cases on the sapphire surface due to preferential sputtering of oxygen. These different mechanisms of creating the energy spectra of ions emitted from sapphire should be taken in account.

  12. Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

    Science.gov (United States)

    Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-11-01

    ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

  13. Carbon nanotube assisted Lift off of GaN layers on sapphire

    Science.gov (United States)

    Long, Hao; Feng, Xiaohui; Wei, Yang; Yu, Tongjun; Fan, Shoushan; Ying, Leiying; Zhang, Baoping

    2017-02-01

    Laser lift off (LLO) was one of the most essential processes in fabrication of vertical GaN-based LEDs. However, traditional laser lift off of GaN on sapphire substrates needed high laser energy threshold, which deteriorated the GaN crystal. In this paper, it was found that inserting carbon nanotube between GaN and sapphire could effectively reduce the laser energy threshold in GaN LLO, from 1.5 J /cm2 of conventional GaN/sapphire to 1.3 J /cm2 of CNT inserted GaN/sapphire. The temperature distributions at the GaN/sapphire interfaces with and without CNTs were simulated by the finite elements calculation under laser irradiation. It was found that, due to the higher laser absorption coefficient of CNT, the CNT played as a powerful heating wire, sending out the thermal outside to elevate the GaN's temperature, and thus reduce the laser threshold for LLO. Raman and photoluminescence measurements indicated that residual stress of GaN membranes was as small as 0.3 GPa by the carbon nanotube assisted LLO. This work not only opens new application of CNTs, but also demonstrates the potential of high performance blue and green LEDs.

  14. Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center (SAPMAC) method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.

  15. Method of surface treatment on sapphire substrate

    Institute of Scientific and Technical Information of China (English)

    NIU Xin-huan; LIU Yu-ling; TAN Bai-mei; HAN Li-ying; ZHANG Jian-xin

    2006-01-01

    Sapphire single crystals are widely used in many areas because of the special physic properties and important application value. As an important substrate material,stringent surface quality requirements,i.e. surface finish and flatness,are required. The use of CMP technique can produce high quality surface finishes at low cost and with fast material removal rates. The sapphire substrate surface is treated by using CMP method. According to sapphire substrate and its product properties,SiO2 sol is chosen as abrasive. The particle size is 15-25 nm and the concentration is 40%. According to the experiment results,pH value is 10.5-11.5. After polishing and cleaning the sapphire surface,the surface roughness was measured by using AFM method and the lowest value of Ra 0.1 nm was obtained. From the results,it can be seen that using such method,the optimal sapphire surface can be gotten,which is advantageous for epitaxial growth and device making-up.

  16. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  17. Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

    Science.gov (United States)

    Choi, Sang; King, Glen; Park, Yeonjoon

    2009-01-01

    SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

  18. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  19. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    Science.gov (United States)

    Deluca, J. J. (Inventor)

    1979-01-01

    An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  20. A comparative study on methods to structure sapphire

    NARCIS (Netherlands)

    Crunteanu, A.; Hoffmann, P.; Pollnau, M.; Buchal, C.

    2003-01-01

    Ti:sapphire is an attractive material for applications as a tunable or short-pulse laser and as a broadband light source in low-coherence interferometry. We investigated several methods to fabricate rib structures in sapphire that can induce channel waveguiding in Ti:sapphire planar waveguides. Thes

  1. Growth and characterization of VO{sub 2}/p-GaN/sapphire heterostructure with phase transition properties

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Jiming, E-mail: jmbian@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China); Wang, Minhuan; Miao, Lihua; Li, Xiaoxuan; Luo, Yingmin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhang, Dong [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); New Energy Source Research Center of Shenyang Institute of Engineering, Shenyang 110136 (China); Zhang, Yuzhi [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China)

    2015-12-01

    Highlights: • VO{sub 2} films were deposited on p-GaN/sapphire substrates by PLD. • A well-defined VO{sub 2}/p-GaN/sapphire interface was observed. • The valence state of V in VO{sub 2} films was confirmed by XPS analyses. • A distinct reversible SMT phase transition behavior was observed. - Abstract: High quality pure phase VO{sub 2} films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO{sub 2}/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}, no other valence state of V was detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) phase transition with resistance change up to nearly three orders of magnitude was observed in the temperature dependent electrical resistance measurement, which was comparable to the high quality VO{sub 2} film grown directly on sapphire substrates. Our present findings will give a deeper insight into the physical mechanism behind the exotic characteristics of VO{sub 2}/p-GaN heterostructure, and further motivate research in novel devices with combined functional properties of both correlated oxide and wide bandgap nitride semiconductors.

  2. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    2008-01-01

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in orde

  3. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in

  4. Gas transfer velocities for quantifying methane, oxygen and other gas fluxes through the air-water interface of wetlands with emergent vegetation

    Science.gov (United States)

    Poindexter, C.; Variano, E. A.

    2012-12-01

    Empirical models for the gas transfer velocity, k, in the ocean, lakes and rivers are fairly well established, but there are few data to predict k for wetlands. We have conducted experiments in a simulated emergent marsh in the laboratory to explore the relationship between k, wind shear and thermal convection. Now we identify the implications of these results for gas transfer in actual wetlands by (1) quantifying the range of wind conditions in emergent vegetation canopies and the range of thermal convection intensities in wetland water columns, and (2) describing the non-linear interaction of these two stirring forces over their relevant ranges in wetlands. We measured mean wind speeds and wind speed variance within the shearless region of a Schoenoplectus-Typha marsh canopy in the Sacramento-San Joaquin Delta (Northern California, USA). The mean wind speed within this region, , is significantly smaller than wind above the canopy. Based on our laboratory experiments, for calm or even average wind conditions in this emergent marsh k600 is only on the order 0.1 cm hr-1 (for neutrally or stably stratified water columns). We parameterize unstable thermal stratification and the resulting thermal convection using the heat flux through the air-water interface, q. We analyzed a water temperature record for the Schoenoplectus-Typha marsh to obtain a long-term heat flux record. We used these heat flux data along with short-term heat flux data from other wetlands in the literature to identify the range of the gas transfer velocity associated with thermal convection in wetlands. The typical range of heat fluxes through water columns shaded by closed emergent canopies (-200 W m-2 to +200 W m-2) yields k600 values of 0.5 - 2.5 cm hr-1 according to the model we developed in the laboratory. Thus for calm or average wind conditions, the gas transfer velocity associated with thermal convection is significantly larger than the gas transfer velocity associated with wind shear

  5. High-temperature sapphire optical sensor fiber coatings

    Science.gov (United States)

    Desu, Seshu B.; Claus, Richard O.; Raheem, Ruby; Murphy, Kent A.

    1990-10-01

    Advanced coal-fired power generation systems, such as pressurized fluidized-bed combustors and integrated gasifier-combined cycles, may provide cost effective future alternatives for power generation, improve our utilization of coal resources, and decrease our dependence upon oil and gas. When coal is burned or converted to combustible gas to produce energy, mineral matter and chemical compounds are released as solid and gaseous contaminants. The control of contaminants is mandatory to prevent pollution as well as degradation of equipment in advanced power generation. To eliminate the need for expensive heat recovery equipment and to avoid efficiency losses it is desirable to develop a technology capable of cleaning the hot gas. For this technology the removal of particle contaminants is of major concern. Several prototype high temperature particle filters have been developed, including ceramic candle filters, ceramic bag filters, and ceramic cross-flow (CXF) filters. Ceramic candle filters are rigid, tubular filters typically made by bonding silicon carbide or alumina-silica grains with clay bonding materials and perhaps including alumina-silica fibers. Ceramic bag filters are flexible and are made from long ceramic fibers such as alumina-silica. CXF filters are rigid filters made of stacks of individual lamina through which the dirty and clean gases flow in cross-wise directions. CXF filters are advantageous for hot gas cleanup applications since they offer a large effective filter surface per unit volume. The relatively small size of the filters allows the pressurized vessel containing them to be small, thus reducing potential equipment costs. CXF filters have shown promise but have experienced degradation at normal operational high temperatures (close to 1173K) and high pressures (up to 24 bars). Observed degradation modes include delamination of the individual tile layers, cracking at either the tile-torid interface or at the mounting flange, or plugging of

  6. Surface modification of sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  7. The growth of sapphire single crystals

    Directory of Open Access Journals (Sweden)

    STEVAN DJURIC

    2001-06-01

    Full Text Available Sapphire (Al2O3 single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation wc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  8. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  9. Photonic detection and characterization of DNA using sapphire microspheres

    OpenAIRE

    Serpengüzel, Ali; Murib, Mohammed Sharif; Yeap, Weng-Siang; Martens, Daan; Bienstman, Peter; De Ceuninck, Ward; van Grinsven, Bart; Schoening, Michael J.; Michiels, Luc; Haenen, Ken; Ameloot, Marcel; Wagner, Patrick

    2014-01-01

    A microcavity-based deoxyribonucleic acid (DNA) optical biosensor is demonstrated for the first time using synthetic sapphire for the optical cavity. Transmitted and elastic scattering intensity at 1510 nm are analyzed from a sapphire microsphere (radius 500 mu m, refractive index 1.77) on an optical fiber half coupler. The 0.43 nm angular mode spacing of the resonances correlates well with the optical size of the sapphire sphere. Probe DNA consisting of a 36-mer fragment was covalently immob...

  10. Sapphire Multiple Filament and Large Plate Growth Processes

    Science.gov (United States)

    1972-10-01

    for sapphire filaments is scrap white verneuil -grown sapphire boules. These boules are processed here at Tyco to achieve the proper mesh size...entrapped liquid freeze, they shrink, resulting in voids. Raw material for our growth process is provided by use of scap verneuil sapphire boules. In...J ;~ ;t" ,, ,, .. ::~ ,:~~\\i : i .<’\\ :1 ’ r .,l,, .. ’ ... :,J_ ’ ’~~ .. ;~ 1-.. i d;·, AFML-TR -7---190 1;).-- SAPPHIRE MULTIPLE

  11. REINFORCEMENT OF NICKEL CHROMIUM ALLOYS WITH SAPPHIRE WHISKERS.

    Science.gov (United States)

    SAPPHIRE, COMPOSITE MATERIALS, CERAMIC FIBERS , CERAMIC FIBERS , TITANIUM COMPOUNDS, ZIRCONIUM COMPOUNDS, HYDRIDES, ADDITIVES, CHROMIUM ALLOYS, FIBER METALLURGY, IRON COMPOUNDS, ENCAPSULATION, DENSITY, SURFACE TENSION.

  12. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.;

    1976-01-01

    of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection......Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...

  13. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  14. Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

  15. Research and development of photovoltaic power system. Characterization and control of surface/interface recombination velocity of crystalline silicon thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Silicon kessho usumaku ni okeru hyomen kaimen saiketsugo sokudo no hyoka to seigyo

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, H. [Hokkaido University, Sapporo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on characterization and control of surface/interface recombination velocity of crystalline silicon thin films. To optimize design and manufacture of solar cells, it is necessary to identify correctly resistance factor (or doping) of bulk of materials, bulk minority carrier life, and recombination velocity on surface, passivation interface and electrode interface. A group in the Hokkaido University has been working since a few years ago on development of non-contact and non-destructive photo-luminescence surface level spectroscopy (PLS{sup 3}). A new non-contact C-V method was also introduced. Using these methods, basic discussions were given on possibility of separate measurements on surface/interface and bulk characteristics of solar cell materials. The PLS{sup 3} method and the non-contact C-V method were used for experimental discussions on evaluation of silicon mono-crystalline and poly-crystalline materials. Discussions were given on separate evaluations by using the DLTS method. 10 figs., 2 tabs.

  16. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    Science.gov (United States)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2-CO gas atmosphere at 1923-1973 K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2-CO gas atmosphere. The thermodynamic principle of the N2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N2-CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  17. Effect of Propellant Combustion on Sapphire

    Directory of Open Access Journals (Sweden)

    Mark L. Bundy

    2000-10-01

    Full Text Available Sapphire (Al2O3 is the window material of choice for laser beam transmission into the combustion chamber of laser-ignited guns. To evaluate the long-term effects of propellant combustion on an Al/sub 2/O/sub 3/ laser window, it is important to know the window temperature during firing. This paper presents temperature data on an Al/sub 2/O/sub 3/ sample located in the breech face of the gun where the laser window would be in a laser-ignited 155 mm(M199 cannon. Al/sub 2/O/sub 3/ sample is a substrate material of a commercially sold thin-film thermocouple, and is therefore thermally, if not optically, representative of an actual Al/sub 2/O/sub 3/ laser window.

  18. Ruby and sapphire from Jegdalek, Afghanistan

    Science.gov (United States)

    Bowersox, G.W.; Foord, E.E.; Laurs, B.M.; Shigley, J.E.; Smith, C.P.

    2000-01-01

    This study provides detailed mining and gemological information on the Jegdalek deposit, in east-central Afghanistan, which is hosted by elongate beds of corundum-bearing marble. Some facet-grade ruby has been recovered, but most of the material consists of semitransparent pink sapphire of cabochon or carving quality. The most common internal features are dense concentrations of healed and nonhealed fracture planes and lamellar twin planes. Color zoning is common, and calcite, apatite, zircon, mica, iron sulfide minerals, graphite, rutile, aluminum hydroxide, and other minerals are also present in some samples. Although the reserves appear to be large, future potential will depend on the establishment of a stable government and the introduction of modern mining and exploration techniques. ?? 2000 Gemological Institute of America.

  19. Synthesis of titanium sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1998-06-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al{sub 2}O{sub 3}) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al{sub 2}O{sub 3} waveguide laser. The implantation of Ti and O ions into c-axis oriented {alpha}-Al{sub 2}O{sub 3} followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti{sup 3+} ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of {approx} .6 to .9 {mu}m, similar to that expected from Ti{sup 3+}. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al{sub 2O}3 waveguide. (authors). 8 refs., 3 figs.

  20. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  1. Pressure measurement using the R fluorescence peaks and 417 cm-1 Raman peak of an anvil in a sapphire-anvil cell

    Science.gov (United States)

    Gao, Rong; Li, Heping

    2012-06-01

    In this study, synthetic sapphire crystals were used as anvils, coupled with a metal gasket, in a Merrill-Bassett-type pressure cell (sapphire-anvil cell (SAC)). Quartz and ruby chips were compressed in the cell and used as pressure calibrators for the SAC. In the sample-anvil interface, the relationship of the frequency shifts of the R1, R2 and 417 cm-1 peaks with pressure was studied. They were constructed as new pressure calibrators. To test the applicability of the newly calibrated SAC, the Raman spectra of dolomite and calcite were measured in situ at room temperature.

  2. Acid-Base Interaction Induced Stability of Self-assembled Monolayer at Solid Interface Characterized by Sum Frequency Generation Spectroscopy

    Science.gov (United States)

    Zhu, He; Dhinojwala, Ali

    2014-03-01

    Long chain alcohols have been known to form hydrogen bonding with the hydroxyl groups on aluminum oxide surface. We used the interface sensitive technique, sum frequency generation (SFG) spectroscopy, to study the molecular structure of hexadecanol at liquid/sapphire interface and air/sapphire interface. We characterized the hydrocarbon chain conformation and the hydrogen bonding at different temperatures. Peak intensity changes were used to determine order-disorder transition of interfacial molecules. The transition hysteresis will also be discussed.

  3. Constructing a starting 3D shear velocity model with sharp interfaces for SEM-based upper mantle tomography in North America

    Science.gov (United States)

    Calo, M.; Bodin, T.; Yuan, H.; Romanowicz, B. A.; Larmat, C. S.; Maceira, M.

    2013-12-01

    this work we propose instead to directly tackle the non-linearity of the inverse problem by using stochastic methods to construct a 3D starting model with a good estimate of the depths of the main layering interfaces. We present preliminary results of the construction of such a starting 3D model based on: (1) Regionalizing the study area to define provinces within which lateral variations are smooth; (2) Applying trans-dimensional stochastic inversion (Bodin et al., 2012) to obtain accurate 1D models in each province as well as the corresponding error distribution, constrained by receiver function and surface wave dispersion data as well as the previously constructed 3D model (name), and (3) connecting these models laterally using data-driven smoothing operators to obtain a starting 3D model with errors. References Bodin, T.,et al. 2012, Transdimensional inversion of receiver functions and surface wave dispersion, J. Geophys. Res., 117, B02301, doi:10.1029/2011JB008560. Yuan and Romanowicz, 2013, in revison. Yuan, H., et al. 2011, 3-D shear wave radially and azimuthally anisotropic velocity model of the North American upper mantle. Geophysical Journal International, 184: 1237-1260. doi: 10.1111/j.1365-246X.2010.04901.x Yuan, H. & Romanowicz, B., 2010. Lithospheric layering in the North American Craton, Nature, 466, 1063-1068.

  4. Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

    Science.gov (United States)

    Kumagai, Yoshinao; Enatsu, Yuuki; Ishizuki, Masanari; Kubota, Yuki; Tajima, Jumpei; Nagashima, Toru; Murakami, Hisashi; Takada, Kazuya; Koukitu, Akinori

    2010-09-01

    Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50-200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H 2 and NH 3, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10 8 cm -2.

  5. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  6. Study on the Anisotropy of Meniscus in the Growing Sapphire

    Institute of Scientific and Technical Information of China (English)

    YAO Tai; ZUO Hong-bo; HAN Jie-cai; MENG Song-he; ZHANG Ming-fu; LI Chang-qing; Grigoryan Benik

    2006-01-01

    This study is aimed at predicting the relationship between the meniscus and the quality of the sapphire crystals produced by the micro-pulling and shoulder at cooled center (SAPMIC) technique. As with different orientations, the shapes of the meniscus vary, so an investigation into the anisotropy of the meniscus shapes is very important for the final quality of the sapphire crystal. An effective model to describe meniscus shapes and their formation process has been presented. The model has been applied to a sapphire crystal of 200 mm diameter in order to check its reliability. The results show that the model proves to be useful for forecasting the final shapes of the sapphire crystal made by the SAPMIC technique.

  7. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  8. Second generation 50 K dual-mode sapphire oscillator.

    Science.gov (United States)

    Anstie, James D; Hartnett, John G; Tobar, Michael E; Ivanov, Eugene N; Stanwix, Paul L

    2006-02-01

    Low-temperature, high-precision sapphire resonators exhibit a turning point in mode frequency-temperature dependence at around 10 K. This, along with sapphire's extremely low dielectric losses at microwave frequencies, results in oscillator fractional frequency stabilities on the order of 10(-15). At higher temperatures the lack of a turning point makes single-mode oscillators very sensitive to temperature fluctuations. By exciting two quasi-orthogonal whispering gallery (WG) modes in a single sapphire resonator, a turning point in the frequency-temperature dependence can be found in the beat frequency between the two modes. A temperature control technique based on mode frequency temperature dependence has been used to maintain the sapphire at this turning point and the fractional frequency instability of the beat frequency has been measured to be at a level of 4.3 X 10(-14) over 1 s, dropping to 3.5 X 10(-14) over 4 s integration time.

  9. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  10. Three dimensional material removal model of laser-induced backside wet etching of sapphire substrate with CuSO4 solutions

    Science.gov (United States)

    Xie, Xiaozhu; Huang, Xiandong; Jiang, Wei; Wei, Xin; Hu, Wei; Ren, Qinglei

    2017-03-01

    The mechanism of laser-induced backside wet etching (LIBWE) of sapphire substrate with CuSO4 solution is considered as a two-step process. First, it deposits the layer from copper sulfate solution on the backside of sapphire substrate by 1064 nm laser irradiation. Then it is followed by the absorption of deposited layer to laser irradiation, resulting in the etching of the sapphire. Therefore, the material removal of LIBWE is based on laser interaction with multilayer materials (sapphire substrate-deposition layer-liquid solution). A three-dimensional thermal model is established to simulate the material removal during the LIBWE process by considering the material data variations of temperature, enthalpy change and latent heat fusion. The model can predict the groove shape influenced by the laser processing parameters (laser fluence, scanning velocity and scanning pass). The simulation results indicate that the groove depth increases with the decreasing of scanning velocity, the increasing of laser fluence and the scanning pass. The groove width is comparable with the focal beam diameter. Some peaks and valleys occur at the bottom of the groove. A comparison between the modeling and experiment indicates that the groove shape in simulation agrees well with the experiment data at laser pulse energy of 4.3 mJ/pulse, scanning velocity of 15 mm/s and the scanning pass of 4. i.e, the present physical model is effective and feasible.

  11. Investigation of sapphire detector designed for single particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Karacheban, Olena; Hempel, Maria [DESY, Zeuthen (Germany); Brandenburg University of Technology, Cottbus (Germany); Afanaciev, Konstantin [NCPHEP, Minsk (Belarus); Henschel, Hans; Lange, Wolfgang; Leonard, Jessica [DESY, Zeuthen (Germany); Levy, Itamar [Tel Aviv University, Tel Aviv (Israel); Lohmann, Wolfgang [Brandenburg University of Technology, Cottbus (Germany); CERN, Geneva (Switzerland); Novgorodova, Olga [Technical University, Dresden (Germany); Schuwalow, Sergej [DESY, Hamburg (Germany)

    2015-07-01

    For beam halo and beam loss monitoring systems at accelerators extremely radiation hard sensors are needed. Single crystal sapphire is a promising material. Industrially grown sapphire wafers are available in large sizes, are low in cost and can be operated at room temperature. Currently sapphire sensors are used for a beam-loss monitor at FLASH,detecting bunches of particles crossing the sensors simultaneously. Here we present a multichannel detector designed for single minimum ionising particle detection using a stack of sapphire plates. The performance of the detector was studied in a 5 GeV electron beam at DESY-II. The detector was operated together with the EUDET beam telescope, which allowed the reconstruction of the position of the hits at the detector. For each sapphire plate the charge collection efficiency was measured as a function of the bias voltage and the signal size as a function of the hit position with respect to the metal electrodes. The data confirms that mainly electrons contribute to the signal. Based on these results the next generation sapphire detector will be designed.

  12. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

    Science.gov (United States)

    Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-08-01

    Group 3 (sapphire ceramic brackets) i.e., Group 2 showed the highest light absorption and the least translucency followed by groups 1 and 3. Shear bond strength results were 2.4 mpa, 1.9 mpa and 3.6 mpa for groups 1,2 and 3 respectively. Superior shear bond strength was recorded in group 3 (sapphire ceramic brackets). ARI results showed that group 3 had increased bond between bracket adhesive interfaces when compared to the other 2 groups. From this study, it has been concluded that sapphire ceramic brackets (Group 3) was superior in translucency and shear bond strength followed by monocrystalline and polycrystalline ceramic brackets.

  13. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study

    Science.gov (United States)

    Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-01-01

    (polycrystalline ceramic brackets) and 2700000 –3000000 cps for Group 3 (sapphire ceramic brackets) i.e., Group 2 showed the highest light absorption and the least translucency followed by groups 1 and 3. Shear bond strength results were 2.4 mpa, 1.9 mpa and 3.6 mpa for groups 1,2 and 3 respectively. Superior shear bond strength was recorded in group 3 (sapphire ceramic brackets). ARI results showed that group 3 had increased bond between bracket adhesive interfaces when compared to the other 2 groups. Conclusion From this study, it has been concluded that sapphire ceramic brackets (Group 3) was superior in translucency and shear bond strength followed by monocrystalline and polycrystalline ceramic brackets. PMID:27656556

  14. Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire.

    Science.gov (United States)

    Perillat-Merceroz, G; Thierry, R; Jouneau, P H; Ferret, P; Feuillet, G

    2012-03-30

    Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

  15. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Science.gov (United States)

    Park, Junsu; Sin, Young-Gwan; Kim, Jae-Hyun; Kim, Jaegu

    2016-10-01

    Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  16. Ti : sapphire laser synchronised with femtosecond Yb pump laser via nonlinear pulse coupling in Ti : sapphire active medium

    Science.gov (United States)

    Didenko, N. V.; Konyashchenko, A. V.; Konyashchenko, D. A.; Kostryukov, P. V.; Kuritsyn, I. I.; Lutsenko, A. P.; Mavritskiy, A. O.

    2017-02-01

    A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb3+-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model.

  17. Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

    Science.gov (United States)

    Ali, M.; Svensk, O.; Riuttanen, L.; Kruse, M.; Suihkonen, S.; Romanov, A. E.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2012-08-01

    We present near-UV GaN light-emitting diodes (LEDs) grown on patterned GaN/sapphire templates with improved material quality and light extraction efficiency. Enhancement of light extraction efficiency is attributed to voids generated at the GaN/sapphire interface. The sidewall inclination angle of the voids can be controlled from nearly vertical (˜ 85°) to fully inclined (˜ 60°) by changing the initial patterning dimensions. Light extraction efficiency and material quality improve with a decreasing void sidewall angle. A 20% increase in the light output is observed at 20 mA of input current for LED structures with ˜60° inclined sidewall voids.

  18. GaN on sapphire mesa technology

    Energy Technology Data Exchange (ETDEWEB)

    Herfurth, Patrick; Men, Yakiv; Kohn, Erhard [Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein Allee 45, 89081 Ulm (Germany); Roesch, Rudolph [Institute of Optoelectronics, Albert-Einstein Allee 45, 89081 Ulm (Germany); Carlin, Jean-Francois; Grandjean, Nicolas [Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique Federal de Lausanne, 1015 Lausanne (Switzerland)

    2012-03-15

    This contribution reports on a GaN on sapphire mesa technology for lattice matched InAlN/GaN HEMTs similar to a silicon on insulator technology. Ultrathin buffer layers between 500 nm and 100 nm have been deep mesa etched down to the substrate to avoid cross talk between devices through the buffer and provide full transparency outside the active device area (of special interest to biochemical sensor applications).The heterostructure characteristics were: N{sub S}> 1.6 x 10{sup 13} cm{sup -2}, R{sub sh}< 600 {omega}/{open_square}. 0.25 {mu}m gate length HEMT device characteristics are moderate, but essentially similar down to 200 nm buffer thickness. Devices on 100 nm buffer layer are still difficult to reproduce. I{sub on}/I{sub off} was up to 10{sup 9} and sub-threshold slopes down to 90 mV/dec (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  20. Evolution of the sapphire industry: Rubicon Technology and Gavish

    Science.gov (United States)

    Harris, Daniel C.

    2009-05-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

  1. Scaling STI's sapphire cryocooler for applications requiring higher heat loads

    Science.gov (United States)

    Karandikar, Abhijit; Fiedler, Andreas

    2012-06-01

    Superconductor Technologies Inc. (STI) developed the Sapphire cryocooler specifically for the SuperLink® product; a high performance superconducting Radio Frequency (RF) front-end receiver used by wireless carriers such as Verizon Wireless and AT&T to improve network cell coverage and data speeds. STI has built and deployed over 6,000 systems operating 24 hours a day (24/7), 7 days a week in the field since 1999. Sapphire is an integrated free piston Stirling cycle cryocooler with a cooling capacity of 5 Watts at 77 Kelvin (K) with less than 100 Watts (W) input power. It has a field-proven Mean Time Between Failure (MTBF) of well over 1 million hours, requires zero maintenance and has logged over 250 million cumulative runtime hours. The Sapphire cooler is built on a scalable technology platform, enabling the design of machines with cooling capacities greater than 1 kilowatt (kW). This scalable platform also extends the same outstanding attributes as the Sapphire cooler, namely high reliability, zero maintenance, and compact size - all at a competitive cost. This paper will discuss emerging applications requiring higher heat loads and these attributes, describe Sapphire, and show a preliminary concept of a scaled machine with a 100 W cooling capacity.

  2. Study of the defects in GaN epitaxial films grown on sapphire by HVPE

    Science.gov (United States)

    Liu, Zhanhui; Xiu, Xiangqian; Chen, Lin; Zhang, Rong; Xie, Zili; Han, Ping; Shi, Yi; Gu, Shulin; Zheng, Youdou

    2008-02-01

    In this paper, the defects in hexagonal GaN epitaxial layers grown on (0001) sapphire (Al IIO 3) substrates by HVPE with a horizontal tube reactor had been studied. The GaN epitaxial layers were etched by means of defect-selective etching (Orthodox etching in molten KOH). The samples were characterized by Scanning Electron Microscopy (SEM) and Cathodoluminescence spectra (CL). From surface morphology and cross-sectional images, the defects could be divided into various types: cracks, low angle grain boundary (LAGB), nano-pipes and dislocations. These different defects were discussed. The cracks were proposed as related to the strain. And the strain could not only come from the lattice mismatch and thermal mismatch between sapphire and GaN layer in their interface, but also from the HVPE growth process. It was found that these screw, mixed and edge type dislocations formed small hexagonal pits after etching. Some pits would be observed in the area near LAGB. Additionally, by CL mapping technique, some non-radiative recombination centers without surface terminations could be probed optically.

  3. Direct measurement of acid-base interaction energy at solid interfaces.

    Science.gov (United States)

    Kurian, Anish; Prasad, Shishir; Dhinojwala, Ali

    2010-12-07

    We have studied acid-base interactions at solid-liquid and solid-solid interfaces using interface-sensitive sum frequency generation (SFG) spectroscopy. The shift of the sapphire hydroxyl peak in contact with several polar and nonpolar liquids and polymers was used to determine the interaction energy. The trend in the interaction energies cannot be explained by measuring only water contact angles. Molecular rearrangements at the sapphire interface, to maximize the interaction of the acid-base groups, play a dominant role, and these effects are not accounted for in the current theoretical models. These results provide important insights into understanding adhesion, friction, and wetting on solid interfaces.

  4. Voltage-Controlled Sapphire Oscillator: Design, Development, and Preliminary Performance

    Science.gov (United States)

    Wang, R. T.; Dick, G. J.; Tjoelker, R. L.

    2007-08-01

    We present the design for a new short-term frequency standard, the voltage-controlled sapphire oscillator, as a practical and lower-cost alternative to a cryogenic sapphire oscillator operating at liquid helium temperatures. Performance goals are a frequency stability of 1 x 10^-14 (1 second equal to or less than tau equal to or less than 100 seconds), more than 2 years of continuous operation, and practical operability. Key elements include the sapphire resonator, low-power and long-life cryocooler, frequency compensation method, and cryo-Pound design. We report the design verification, experimental results, and test results of the cryocooler environmental sensitivity, as well as a preliminary stability measurement.

  5. Clinical Application of the Sapphire Unfolder Lens Injection System

    Institute of Scientific and Technical Information of China (English)

    Weiai Guo; Danying Zheng; Zhenyu Li; Yiyong Qian; Zhenping Zhang

    2002-01-01

    Purpose: To summarize the clinical experience of 300 cases using the Sapphire unfloder intraocular lens (IOL) injection system.Methods: After the standard phacoemulsification, an AR40e IOL was implanted using the Sapphire Unfolder. The involved problems during and after the operation were observed and analyzed.Results:The complications occurred during the operation including the crack at the haptic-optic junction in 2 cases, slight kink in the haptic in 5 cases, IOL clamp into the cartridge in 2 cases, posterior capsular rupture in 2 cases and endothelium damage in the central small area in 4 cases. All the patients recovered successfully with IOLs in good position.Conclusion: IOL implantation with the Sapphire Unfolder led to no serious complications and got the satisfactory results.

  6. Energy velocity and group velocity

    Institute of Scientific and Technical Information of China (English)

    陈宇

    1995-01-01

    A new Lagrangian method for studying the relationship between the energy velocity and the group velocity is described. It is proved that under the usual quasistatic electric field, the energy velocity is identical to the group velocity for acoustic waves in anisotropic piezoelectric (or non-piezoelectric) media.

  7. Blocks and residual stresses in shaped sapphire single crystals

    Science.gov (United States)

    Krymov, V. M.; Nosov, Yu. G.; Bakholdin, S. I.; Maslov, V. N.; Shul‧pina, I. L.; Nikolaev, V. I.

    2017-01-01

    The formation of blocks and residual stresses in shaped sapphire crystals grown from the melt by the Stepanov method (EFG) has been studied. The probability of block formation is higher for the growth along the c axis compared to that grown in the a-axis direction. The distribution of residual stress in sapphire crystals of tubular, rectangular and round cross section was measured by the conoscopy method. It was found that the magnitude of the residual stress increases from the center to the periphery of the crystal and reaches up to about 20 MPa. Residual stress tensor components for solid round rod and tubular single crystals were determined by numerical integration.

  8. Inversion domains in AlN grown on (0001) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  9. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  10. LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES

    Institute of Scientific and Technical Information of China (English)

    J. Xu; R. Zhang; Y.P. Wang; X.Q. Xiu; S.L. Gu; B. Shen; Y. Shi; Z.G. Liu; Y.D. Zheng

    2001-01-01

    Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.

  11. Nanosecond optical transmission studies of laser annealing in ion-implanted silicon-on-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Lee, M.C.; Lo, H.W.; Aydinli, A.; Trott, G.J.; Compaan, A. (Kansas State Univ., Manhattan (USA). Dept. of Physics); Hale, E.B. (Missouri Univ., Rolla (USA). Dept. of Physics)

    1983-06-01

    Time-resolved optical transmission has been studied using 633 and 514 nm CW probes on ion-implantation-amorphized silicon-on-sapphire during annealing by a 10 nsec, approximately 1 J/cm/sup 2/ pulse at either 532 nm or 485 nm. As recrystallization sets in the transmitted signal at 514 nm rises by approximately 10/sup 3/ in approximately 60 nsec and provides a measure of regrowth velocity. Beyond 200 nsec the much slower transmission rise is used to provide an estimate of the Si cooling rate. The difference in transmission observed between initially crystalline and initially amorphous Si provide an estimate of the latent heat of recrystallization of the amorphous phase.

  12. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison t

  13. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  14. Noncollinear parametric generation in LiIO(3) and beta-barium borate by frequency-doubled femtosecond Ti:sapphire laser pulses.

    Science.gov (United States)

    Krylov, V; Kalintsev, A; Rebane, A; Erni, D; Wild, U P

    1995-01-15

    In LiIO(3) and BBO crystals the wave-matching conditions for femtosecond noncollinear parametric light generation at lambda = 390 nm pumping wavelength are investigated. In the LiIO(3) crystal simultaneous phase- and group-velocity-matching angles are determined. Parametric generation occurred at 0.45-2.9-mu;m wavelengths by pumping with the second harmonic of 150-fs Ti:sapphire laser pulses and is in qualitative agreement with calculated directions in both crystals.

  15. Interfaz para censar velocidad en un motor utilizando la tarjeta de adquisición de datos PCI-6025E; Interface for Measure Motor Velocity Used the Adquisition Target PCI-6025E

    Directory of Open Access Journals (Sweden)

    Roberto Garrido Díaz

    2011-02-01

    Full Text Available En este artículo se implementa la elaboración de una interfaz para censar la velocidad de un motor. Se utilizaun taco generador TDP 0,09 LT 3 que se encuentra acoplado al eje de un motor asincrónico y se elabora uncircuito electrónico impreso para adecuar la señal obtenida por este taco generador a una señal que puedaser interpretada por la tarjeta de adquisición de datos de National Instrument: PCI-6025E. Se plantea unpequeño ejemplo de la utilización de esta interfaz desde un instrumento virtual desarrollado en Labview 5.1sobre Linux .  Its article is about the implementation of an interface for measure motor velocity. Is used a TDP 0,09 LT 3tachogenerator  situated in the  asynchrony motor and is elaborated a printed electronic circuit to adequatethe censor signal to a signal that can be read  for  a PCI-6025E National Instrument acquisition target. Itsshow an example of  the used of  this interface from a software based in Labview 5.1 over Linux

  16. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    Science.gov (United States)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-03-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

  17. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials

    Science.gov (United States)

    2005-08-24

    the Cr in sapphire could also permit the construction of white light LEDs . Ultimately, an integrated III-V Nitride optical pump for Ti:Sapphire could...substrates by MOCVD. 2. Characterization of doped sapphire/ InGaN structures byPL to simulate electrical injection by laser or LED device structures Part 2 1...Cr:sapphire substrate. Solid line is the spectrum of blue and red light emitted by InGaN LED epitaxially grown on Cr:sapphire substrate. The light was collected

  18. Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching.

    Science.gov (United States)

    Yamin, Tony; Wissberg, Shai; Cohen, Hagai; Cohen-Taguri, Gili; Sharoni, Amos

    2016-06-15

    The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.

  19. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  20. Metal/Ceramic Interfaces: Relationships between Structures, Chemistry and Interfaces

    Science.gov (United States)

    1991-03-15

    Tech Art.Q-R.TA- Rsdl Strs CrR 7/17/89.10:01 AM.10/18/90I I I ABSTRACTI Metal/ceramic bonds subject to residual stress caused by thermal expansioa I...aalloy > (A120 3 made with alloys having < 67 at.% Ta at 11000C) crack predominantly within the sapphire, I KJM-Evans-16,Tech ArtoQ-RTA- Rsdl Sirs...interface paths: within the reaction product KJM.Evans-16Tech Art.Q-RTA- Rsdl Strs Crk 7/17/89.10:01 AM.10/1890 5 g I I layer, along the reaction

  1. Ti:sapphire laser with long-pulse lamp pumping

    Science.gov (United States)

    Koselja, Michael P.; Kubelka, Jiri; Kvapil, Jiri

    1992-06-01

    Lamp pumping of Ti:Sapphire has some advantages over laser pumping and represents some interest due to possible applications. The paper will present laser behavior of Ti:Sapphire under very long lamp pulse pumping. Pulse lamp duration (FWHM) was more than 100 times greater than the lifetime of Ti3+. Output energy with no tuning element was achieved greater than 1.5 J with 0.12% electrical-to-optical efficiency. Dimensions of the rod used was 7 mm in diameter and 148 mm in length. The doping level of Ti3+ was 0.09% Ti2O3 in the rod. Tuning characteristics with different tuning elements are also presented. Further development to obtain CW lamp pumping operation will be discussed.

  2. A GRASP for Next Generation Sapphire Image Acquisition Scheduling

    Directory of Open Access Journals (Sweden)

    Yang Wang

    2016-01-01

    Full Text Available This paper investigates an image acquisition scheduling problem for a Canadian surveillance-of-space satellite named Sapphire that takes images of deep space Earth-orbiting objects. For a set of resident space objects (RSOs that needs to be imaged within the time horizon of one day, the Sapphire image acquisition scheduling (SIAS problem is to find a schedule that maximizes the “Figure of Merit” of all the scheduled RSO images. To address the problem, we propose an effective GRASP heuristic that alternates between a randomized greedy constructive procedure and a local search procedure. Experimental comparisons with the currently used greedy algorithm are presented to demonstrate the merit of the proposed algorithm in handling the SIAS problem.

  3. AlN growth on sapphire substrate by ammonia MBE

    Science.gov (United States)

    Mansurov, V. G.; Nikitin, A. Yu.; Galitsyn, Yu. G.; Svitasheva, S. N.; Zhuravlev, K. S.; Osvath, Z.; Dobos, L.; Horvath, Z. E.; Pecz, B.

    2007-03-01

    Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are investigated. Surface morphology evolution during AlN growth is studied in situ by reflection high energy electron diffraction and ex situ by atomic force microscopy. It is found that the surfaces of AlN layers thicker than 100 nm have two major features: a quite smooth background and noticeable amount of hillocks. The influence of growth conditions on the AlN surface morphology is studied in order to find a way for reducing of the hillocks density. A modification of nitridated sapphire surface by small amount of Al (1-2 monolayers) with subsequent treatment of the surface under ammonia flux is proposed. An improvement of AlN surface morphology of the layers grown on the modified surfaces is demonstrated.

  4. Measurements of prompt radiation induced conductivity of alumina and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Hartman, E. Frederick [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Zarick, Thomas Andrew [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sheridan, Timothy J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Preston, Eric F. [ITT Coporation, Colorado Springs, CO (United States)

    2011-04-01

    We performed measurements of the prompt radiation induced conductivity in thin samples of Alumina and Sapphire at the Little Mountain Medusa LINAC facility in Ogden, UT. Five mil thick samples were irradiated with pulses of 20 MeV electrons, yielding dose rates of 1E7 to 1E9 rad/s. We applied variable potentials up to 1 kV across the samples and measured the prompt conduction current. Analysis rendered prompt conductivity coefficients between 1E10 and 1E9 mho/m/(rad/s), depending on the dose rate and the pulse width for Alumina and 1E7 to 6E7 mho/m/(rad/s) for Sapphire.

  5. Color Enhancement by Diffusion of Beryllium in Dark Blue Sapphire

    Institute of Scientific and Technical Information of China (English)

    Kyungj in Kim; Yongkil Ahn

    2016-01-01

    Diffusion of beryllium was performed on dark blue sapphire from China and Australia.The samples were heated with beryllium as a dopant in a furnace at 1 600 ℃ for 42 h in air.After beryllium diffusion,sam-ples were analyzed by UV-Vis,FTIR,and WD-XRF spectroscopy.After heat-treatment with Be as a catalyst, the irons of the ferrous state were changed to the ferric state.Therefore,reaction of Fe2+/Ti4+ IVCT was de-creased.The absorption peaks at 3 309 cm-1 attributed to OH radical were disappeared completely due to carry out heat treatment.Consequently,the intensity of absorption band was decreased in the visible region.Espe-cially,decreased absorption band in the vicinity of 570 nm was responsible for the lighter blue color.There-fore,we confirmed that the dark blue sapphires from China and Australia were changed to vivid blue.

  6. Route to 100 TW Ti: Sapphire laser at repetitive mode

    Directory of Open Access Journals (Sweden)

    Teng Hao

    2013-11-01

    Full Text Available We demonstrated a 100 TW-class femtosecond Ti: sapphire laser running at repetition rate of 0.1 Hz by adding a stage amplifier in the 20 TW/10 Hz laser facility (XL-II. Pumping the new stage amplifier with the 25 J green Nd:glass laser, we successfully upgraded the laser energy to 3.4 J with duration of 29 fs, corresponding to a peak power of 117 TW.

  7. SINGLE-CRYSTAL SAPPHIRE OPTICAL FIBER SENSOR INSTRUMENTATION

    Energy Technology Data Exchange (ETDEWEB)

    A. Wang; G. Pickrell; R. May

    2002-09-10

    Accurate measurement of temperature is essential for the safe and efficient operation and control of a wide range of industrial processes. Appropriate techniques and instrumentation are needed depending on the temperature measurement requirements in different industrial processes and working environments. Harsh environments are common in many industrial applications. These harsh environments may involve extreme physical conditions, such as high-temperature, high-pressure, corrosive agents, toxicity, strong electromagnetic interference, and high-energy radiation exposure. Due to these severe environmental conditions, conventional temperature sensors are often difficult to apply. This situation has opened a new but challenging opportunity for the sensor society to provide robust, high-performance, and cost-effective temperature sensors capable of operating in those harsh environments. The focus of this research program has been to develop a temperature measurement system for temperature measurements in the primary and secondary stages of slagging gasifiers. For this application the temperature measurement system must be able to withstand the extremely harsh environment posed by the high temperatures and corrosive agents present in these systems. Real-time, accurate and reliable monitoring of temperature for the coal gasification process is important to realize the full economic potential of these gasification systems. Long life and stability of operation in the high temperature environment is essential for the temperature measurement system to ensure the continuous running of the coal gasification system over the long term. In this high temperature and chemically corrosive environment, rather limited high temperature measurement techniques such as high temperature thermocouples and optical/acoustic pyrometers are available, each with their own limitations. In this research program, five different temperature sensing schemes based on the single crystal sapphire

  8. Ga/Mg ratio as a new geochemical tool to differentiate magmatic from metamorphic blue sapphires

    Science.gov (United States)

    Peucat, J. J.; Ruffault, P.; Fritsch, E.; Bouhnik-Le Coz, M.; Simonet, C.; Lasnier, B.

    2007-10-01

    Using ICP-MS-LA analyses, we demonstrate that the use of the Ga/Mg ratio, in conjunction with the Fe concentration, is an efficient tool in discriminating between "metamorphic" and "magmatic" blue sapphires. Magmatic blue sapphires found in alkali basalts (e.g. southeastern Asia, China, Africa) are commonly medium-rich to rich in Fe (with average contents between 2000 and 11000 ppm), high in Ga (> 140 ppm), and low in Mg (generally 10). Conversely, metamorphic blue sapphires found in basalts (e.g. Pailin pastel) and in metamorphic terrains (e.g. Mogok, Sri Lanka, Ilakaka) are characterized by low average iron contents ( 60 ppm) with low average Ga/Mg ratios (< 10). Basaltic magmatic sapphires have Fe, Ga and Mg contents similar to those obtained for primary magmatic sapphires found in the Garba Tula syenite. This suggests that these both sets of sapphires have a possible common "syenitic" origin, as previously proposed from other criteria. In addition, plumasite-related sapphires and metamorphic sapphires also exhibit similar composition in trace elements. Based on results from the present study, we suggest that fluid circulations during a metamorphic stage produced metasomatic exchanges between mafic and acidic rocks (plumasite model), thus explaining the high Mg contents and converging Ga/Mg ratios observed in metamorphic sapphires.

  9. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  10. Detection of beryllium treatment of natural sapphires by NRA

    Science.gov (United States)

    Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.

    2010-06-01

    Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.

  11. Thermal Control of a Dual Mode Parametric Sapphire Transducer

    CERN Document Server

    Belfi, Jacopo; De Michele, Andrea; Gabbriellini, Gianluca; Mango, Francesco; Passaquieti, Roberto

    2010-01-01

    We propose a method to control the thermal stability of a sapphire dielectric transducer made with two dielectric disks separated by a thin gap and resonating in the whispering gallery (WG) modes of the electromagnetic field. The simultaneous measurement of the frequencies of both a WGH mode and a WGE mode allows one to discriminate the frequency shifts due to gap variations from those due to temperature instability. A simple model, valid in quasi equilibrium conditions, describes the frequency shift of the two modes in terms of four tuning parameters. A procedure for the direct measurement of them is presented.

  12. Ultrafast, ultrahigh-peak power Ti:sapphire laser system

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

    2001-01-01

    We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

  13. Sapphire ball lensed fiber probe for common-path optical coherence tomography in ocular imaging and sensing

    Science.gov (United States)

    Zhao, Mingtao; Huang, Yong; Kang, Jin U.

    2013-03-01

    We describe a novel common-path optical coherence tomography (CP-OCT) fiber probe design using a sapphire ball lens for cross-sectional imaging and sensing in retina vitrectomy surgery. Single mode Gaussian beam (TEM00) simulation was used to optimize lateral resolution and working distance (WD) of the common-path probe. A theoretical sensitivity model for CP-OCT was prosed to assess its optimal performance based an unbalanced photodetector configuration. Two probe designs with working distances (WD) 415μm and 1221μm and lateral resolution 11μm and 18μm, respectively were implemented with sensitivity up to 88dB. The designs are also fully compatible with conventional Michelson interferometer based OCT configurations. The reference plane of the probe, located at the distal beam exit interface of the single mode fiber (SMF), was encased within a 25-gauge hypodermic needle by the sapphire ball lens facilitates its applications in bloody and harsh environments. The performances of the fiber probe with 11μm of lateral resolution and 19μm of axial resolution were demonstrated by cross-sectional imaging of a cow cornea and retina in vitro with a 1310nm swept source OCT system. This probe was also attached to a piezoelectric motor for active compensation of physiological tremor for handheld retinal surgical tools.

  14. Skin thermal response to sapphire contact and cryogen spray cooling: a comparative study based on measurements in a skin phantom

    Science.gov (United States)

    Torres, Jorge H.; Nelson, J. Stuart; Tanenbaum, B. S.; Anvari, Bahman

    2000-05-01

    Non-specific thermal injury to the epidermis may occur as a result of laser treatment of cutaneous hypervascular malformations (e.g. port wine stains) and other dermatoses. Methods to protect the epidermis from thermal injury include sapphire contact cooling (SCC) and cryogen spray cooling (CSC). Evaluation of the skin thermal response to either cooling method and better understanding of the heat transfer process at the skin surface are essential for further optimization of cooling technique during laser therapy. We present internal temperature measurements in an epoxy resin phantom in response to both SCC and CSC, and use the results in conjunction with a mathematical model to predict the temperature distributions within human skin. Based on our results, a conductive heat transfer process at the skin interface appears to be the primary mechanism for both SCC and CSC. In the case of CSC, 'film cooling' rather than 'evaporative cooling' seems to be the dominant mode during the spurt duration. Currently, due to the lower temperature of the cryogen film and its shorter time of application, CSC produces larger temperature reductions at the skin surface and smaller temperature reductions at depths greater than 200 micrometer (i.e., higher spatial selectivity) when compared to SCC. However, SCC can potentially induce temperature reductions comparable to those produced by CSC if a sapphire temperature similar to that for a cryogen could be achieved in practice.

  15. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  16. Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide

    NARCIS (Netherlands)

    Crunteanu, A.; Jänchen, G.; Salathé, R.P.; Hoffmann, P.; Pollnau, M.; Eason, R.W.; Shepherd, D.P.

    2002-01-01

    We were successful in creating 1.4-µm high ribs in a Ti:sapphire planar waveguide by reactive ion etching. Optical investigations of the obtained structure showed channel-waveguide fluorescence emission of the Ti:sapphire layer after Ar-ion excitation.

  17. Fiber-laser-pumped Ti:sapphire laser

    CERN Document Server

    Samanta, G K; Devi, Kavita; Ebrahim-Zadeh, M

    2010-01-01

    We report the first experimental demonstration of efficient and high-power operation of a Ti:sapphire laser pumped by a simple, compact, continuous-wave (cw) fiber-laser-based green source. The pump radiation is obtained by direct single-pass second-harmonic-generation (SHG) of a 33-W, cw Yb-fiber laser in 30-mm-long MgO:sPPLT crystal, providing 11 W of single-frequency green power at 532 nm in TEM00 spatial profile with power and frequency stability better than 3.3% and 32 MHz, respectively, over one hour. The Ti:sapphire laser is continuously tunable across 743-970 nm and can deliver an output power up to 2.7 W with a slope efficiency as high as 32.8% under optimum output coupling of 20%. The laser output has a TEM00 spatial profile with M2<1.44 across the tuning range and exhibits a peak-to-peak power fluctuation below 5.1% over 1 hour.

  18. Temperature behavior of damage in sapphire implanted with light ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal)], E-mail: ealves@itn.pt; Marques, C. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal); Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, Carl J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10{sup 16}-1 x 10{sup 17} cm{sup -2}) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 deg. C and 1000 deg. C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10{sup 17} cm{sup -2}. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 deg. C and 1000 deg. C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  19. The effect of crystal orientation on the cryogenic strength of hydroxide catalysis bonded sapphire

    Science.gov (United States)

    Haughian, K.; Douglas, R.; van Veggel, A. A.; Hough, J.; Khalaidovski, A.; Rowan, S.; Suzuki, T.; Yamamoto, K.

    2015-04-01

    Hydroxide catalysis bonding has been used in gravitational wave detectors to precisely and securely join components of quasi-monolithic silica suspensions. Plans to operate future detectors at cryogenic temperatures has created the need for a change in the test mass and suspension material. Mono-crystalline sapphire is one candidate material for use at cryogenic temperatures and is being investigated for use in the KAGRA detector. The crystalline structure of sapphire may influence the properties of the hydroxide catalysis bond formed. Here, results are presented of studies of the potential influence of the crystal orientation of sapphire on the shear strength of the hydroxide catalysis bonds formed between sapphire samples. The strength was tested at approximately 8 K; this is the first measurement of the strength of such bonds between sapphire at such reduced temperatures. Our results suggest that all orientation combinations investigated produce bonds of sufficient strength for use in typical mirror suspension designs, with average strengths >23 MPa.

  20. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  1. Highly efficient, widely tunable, 10-Hz parametric amplifier pumped by frequency-doubled femtosecond Ti:sapphire laser pulses.

    Science.gov (United States)

    Zhang, J Y; Xu, Z; Kong, Y; Yu, C; Wu, Y

    1998-05-20

    We report a 10-Hz, highly efficient, widely tunable (from the visible to the IR), broadband femtosecond optical parametric generator and optical parametric amplifier (OPA) in BBO, LBO, and CBO crystals pumped by the frequency-doubled output of a regeneratively amplified Ti:sapphire laser at 400 nm. The output of the system is continuously tunable from 440 nm to 2.5 microm with a maximum overall efficiency of approximately 25% at 670 nm and an optical conversion efficiency of more than 36% in the OPA stage. The effects of the seed beam energy, the type of the crystal and the crystal length, and the pumping energy of the output of the OPA, such as the optical efficiency, the bandwidth, the pulse duration, and the group velocity mismatch between the signal and the idler and between the seeder and the pump, are investigated. The results provide useful information for optimization of the design of the system.

  2. Room Temperature Experiments with a Macroscopic Sapphire Mechanical Oscillator

    Science.gov (United States)

    Bourhill, Jeremy; Ivanov, Eugene; Tobar, Micahel

    2015-03-01

    We present initial results from a number of experiments conducted on a 0.53 kg sapphire ``dumbbell'' crystal. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects frequency modulate resonant microwave whispering gallery modes, simultaneously excited within the crystal. A novel microwave readout system is described allowing extremely low noise measurements of this frequency modulation with a phase noise floor of -160 dBc/Hz at 100 kHz, near our modes of interest. Fine-tuning of the crystal's suspension have allowed for the optimisation of mechanical Q-factors in preparation for cryogenic experiments, with a value of 8 x 107 achieved so far. Finally, results are presented that demonstrate the excitation of mechanical modes via radiation pressure force. These are all important steps towards the overall goal of the experiment; to cool a macroscopic device to the quantum ground state.

  3. Superexciplex of Coumarin Molecules using Tunable Ti-Sapphire Laser

    Science.gov (United States)

    Al-Ghamdi, Attieh Ali; Al-Dwayyan, Abdullah S.; Masilamani, Vadivel; Al-Saud, Turki Saud M.; Al-Salhi, Mohammed Saleh

    2003-10-01

    Certain highly polar dye molecules exhibit an additional optical gain band under pulsed laser excitation, while there is no such band under steady-state continuous wave (CW) lamp excitation. This new band is not due to an excimer, an exciplex or a two-photon fluorescence band but stems from the formation of a new molecular complex in which two excited molecules remain associated with a solvent molecule acting as a bridge. In this paper, the characteristics of superexciplexes of four related coumarin molecules are presented. All molecules were excited using a tunable Ti-sapphire laser pulse 10 ns in width. The distinct difference between the amplified spontaneous emission (ASE) spectra obtained with tunable laser and tunable lamp excitation demonstrated that twisted intramolecular charge transfer (TICT) conformations might also assist in the formation of these superexciplexes.

  4. The charge state of iron implanted into sapphire

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.; Sklad, P.S.; White, C.W.; Farlow, G.C.; Perez, A.; Kornilios, N.; Marest, G.

    1987-08-01

    Several techniques (RBS, TEM, CEMS) have been used to characterize sapphire single crystals implanted with iron at room temperature to fluences of 10/sup 16/ to 10/sup 17/ ions cm/sup -2/. At low fluences the as-implanted iron is found mainly in the ferrous state. As the fluence is increased, Fe/sup 3 +/ and metallic iron clusters became dominant. There is a strong correlation between the probability of finding specific configurations of iron ions within four cation coordination shells and the relative amounts of each charge state observed. The superparamagnetic behavior of the clusters suggest that they are of the order of 2 nm in size but the large amount of irradiation-induced damage and residual stress has prevented their imaging by TEM. 13 refs., 7 figs.

  5. Adapting a Cryogenic Sapphire Oscillator for Very Long Baseline Interferometry

    CERN Document Server

    Doeleman, Sheperd; Rogers, Alan; Hartnett, John; Tobar, Michael; Nand, Nitin; 10.1086/660156

    2011-01-01

    Extension of very long baseline interferometry (VLBI) to observing wavelengths shorter than 1.3mm provides exceptional angular resolution (~20 micro arcsec) and access to new spectral regimes for the study of astrophysical phenomena. To maintain phase coherence across a global VLBI array at these wavelengths requires that ultrastable frequency references be used for the heterodyne receivers at all participating telescopes. Hydrogen masers have traditionally been used as VLBI references, but atmospheric turbulence typically limits (sub) millimeter VLBI coherence times to ~1-30 s. Cryogenic Sapphire Oscillators (CSO) have better stability than Hydrogen masers on these time scale and are potential alternatives to masers as VLBI references. Here, We describe the design, implementation and tests of a system to produce a 10 MHz VLBI frequency standard from the microwave (11.2 GHz) output of a CSO. To improve long-term stability of the new reference, the CSO was locked to the timing signal from the Global Positionin...

  6. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  7. Kinetic Interface

    DEFF Research Database (Denmark)

    2009-01-01

    A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises.......A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises....

  8. Large-scale inhomogeneity in sapphire test masses revealed by Rayleigh scattering imaging

    Science.gov (United States)

    Yan, Zewu; Ju, Li; Eon, François; Gras, Slawomir; Zhao, Chunnong; Jacob, John; Blair, David G.

    2004-03-01

    Rayleigh scattering in test masses can introduce noise and reduce the sensitivity of laser interferometric gravitational wave detectors. In this paper, we present laser Rayleigh scattering imaging as a technique to investigate sapphire test masses. The system provides three-dimensional Rayleigh scattering mapping of entire test masses and quantitative evaluation of the Rayleigh scattering coefficient. Rayleigh scattering mapping of two sapphire samples reveals point defects as well as inhomogeneous structures in the samples. We present results showing significant non-uniform scattering within two 4.5 kg sapphire test masses manufactured by the heat exchanger method.

  9. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser....... However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy....

  10. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  12. Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In this paper, large-sized sapphire (Φ230×210 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching, scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101~8.0×102 cm-2, in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally, the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.

  13. Advances in Trace Element "Fingerprinting" of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    National Research Council Canada - National Science Library

    F Lin Sutherland; Khin Zaw; Sebastien Meffre; Tzen-Fui Yui; Kyaw Thu

    2015-01-01

    ... corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents...

  14. Newly designed multilayer thin film mirror for dispersion compensation in Ti: sapphire femtosecond lasers

    Institute of Scientific and Technical Information of China (English)

    Chunyan Liao; Jianda Shao; Jianbing Huang; Zhengxiu Fan; Hongbo He

    2005-01-01

    @@ There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

  15. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  16. Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis

    Science.gov (United States)

    Bletskan, D. I.; Bratus', V. Ya.; Luk'yanchuk, A. R.; Maslyuk, V. T.; Parlag, O. A.

    2008-07-01

    Sapphire (α-Al2O3) single crystals grown using the Verneuil and Kyropoulos methods have been analyzed using electron paramagnetic resonance and γ-ray spectroscopy with 12-MeV bremsstrahlung excitation. It is established that uncontrolled impurities in the final sapphire single crystals grown by the Kyropoulos method in molybdenum-tungsten crucibles are supplied both from the initial materials and from the furnace and crucible materials

  17. Jones calculus modeling and analysis of the thermal distortion in a Ti:sapphire laser amplifier.

    Science.gov (United States)

    Cho, Seryeyohan; Jeong, Jihoon; Yu, Tae Jun

    2016-06-27

    The mathematical modeling of an anisotropic Ti:sapphire crystal with a significant thermal load is performed. The model is expressed by the differential Jones matrix. A thermally induced distortion in the chirped-pulse amplification process is shown by the solution of the differential Jones matrix. Using this model, the thermally distorted spatio-temporal laser beam shape is calculated for a high-power and high-repetition-rate Ti:sapphire amplifier.

  18. High power all-solid-state quasi-continuous-wave tunable Ti: sapphire laser system

    Institute of Scientific and Technical Information of China (English)

    Lei Zou; Xin Ding; Yue Zou; Hongmei Ma; Wuqi Wen; Peng Wang; Jianquan Yao

    2005-01-01

    This paper reports a high power, all-solid-state, quasi-continuous-wave tunable Ti:sapphire laser system pumped by laser diode (LD) pumped frequency-doubled Nd:YAG laser. The maximum tuned output power of 4.2 W (797 nm) and tuned average power of 3.7 W were achieved when fixing the Ti:sapphire broadband output power at 5.0 W and applying 750-850 nm broadband coated mirror.

  19. Aleutian disease of mink: the antibody response of sapphire and pastel mink to Aleutian disease virus.

    Science.gov (United States)

    Bloom, M E; Race, R E; Hadlow, W J; Chesebro, B

    1975-10-01

    The specific antiviral antibody response of sapphire and pastel mink to Pullman strain of ADV has been examined. Sapphire mink inoculated with from 300,000-3 LD50 developed high levels of specific antibody and AD. Pastel mink inoculated with parallel doses of ADV also produced antibody but did not develop AD. The low incidence of AD in pastel mink inoculated with Pullman strain of ADV is probably related to factors other than antiviral antibody.

  20. Supersmooth and modified surface of sapphire crystals: Formation, characterization, and applications in nanotechnologies

    Science.gov (United States)

    Muslimov, A. E.; Asadchikov, V. E.; Butashin, A. V.; Vlasov, V. P.; Deryabin, A. N.; Roshchin, B. S.; Sulyanov, S. N.; Kanevsky, V. M.

    2016-09-01

    The results of studying the state of the surface of sapphire crystals by a complex of methods in different stages of crystal treatment are considered by an example of preparing sapphire substrates with a supersmooth surface. The possibility of purposefully forming regular micro- and nanoreliefs and thin transition layers using thermal and thermochemical impacts are considered. The advantages of sapphire substrates with a modified surface for forming heteroepitaxial CdTe and ZnO semiconductor films and ordered ensembles of gold nanoparticles are described. The results of the experiments on the application of crystalline sapphire as a material for X-ray optical elements are reported. These elements include total external reflection mirrors and substrates for multilayer mirrors, output windows for synchrotron radiation, and monochromators working in the reflection geometry in X-ray spectrometers. In the latter case, the problems of the defect structure of bulk crystals sapphire and the choice of a method for growing sapphire crystals of the highest structural quality are considered.

  1. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Joucken, Frédéric, E-mail: frederic.joucken@unamur.be; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-15

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10{sup 12} cm{sup −2}) together with quite low carrier mobility (∼1350 cm{sup 2}/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  2. Cellular and humoral antibody responses of normal pastel and sapphire mink to goat erythrocytes.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J; Munoz, J J

    1971-02-01

    This study was undertaken to determine whether normal sapphire and royal pastel mink differ immunologically at the cellular and humoral levels. Two days after primary intraperitoneal (ip) inoculation of goat erythrocytes (GE), essentially no 19 or 7S plaque-forming cells (PFC) per 10(6) cells were detected in spleen or in abdominal and peripheral lymph nodes of either color phase. On the 4th day, more 19S PFC were detected in pastel than in sapphire tissues; pastel tissues also contained 7S PFC, whereas essentially none was present in sapphires until the 6th day. After an ip booster inoculation, the number of PFC was markedly different between the two color phases. These differences were most apparent in spleen and peripheral lymph nodes. In parallel with differences observed in PFC responses between the color phases, total hemolysin and 2-mercaptoethanol-resistant hemolysin titers of pastels exceeded those of sapphires in all but one interval after the primary, and at every interval after the booster, inoculation. These data indicate that sapphire mink are not immunological cripples, nor are they immunologically hyperactive, but that differences do exist between sapphire and royal pastel mink, especially in the response to booster injections of GE.

  3. Planar velocity analysis of diesel spray shadow images

    CERN Document Server

    Sedarsky, David; Blaisot, J-B; Rozé, C

    2012-01-01

    The focus of this work is to demonstrate how spatially resolved image information from diesel fuel injection events can be obtained using a forward-scatter imaging geometry, and used to calculate the velocities of liquid structures on the periphery of the spray. In order to obtain accurate velocities directly from individual diesel spray structures, those features need to be spatially resolved in the measurement. The distributed structures measured in a direct shadowgraphy arrangement cannot be reliably analyzed for this kind of velocity information. However, by utilizing an intense collimated light source and adding imaging optics which modify the signal collection, spatially resolved optical information can be retrieved from spray edge regions within a chosen object plane. This work discusses a set of measurements where a diesel spray is illuminated in rapid succession by two ultrafast laser pulses generated by a mode-locked Ti-Sapphire oscillator seeding a matched pair of regenerative amplifiers. Light fro...

  4. Laser surface and subsurface modification of sapphire using femtosecond pulses

    Energy Technology Data Exchange (ETDEWEB)

    Eberle, G., E-mail: eberle@iwf.mavt.ethz.ch [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Schmidt, M. [Chair of Photonic Technologies, University of Erlangen-Nuremberg, Konrad-Zuse-Strasse 3-5, 91052 Erlangen (Germany); Pude, F. [Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland); Wegener, K. [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland)

    2016-08-15

    Highlights: • Single and multipulse ablation threshold of aluminium oxide is determined. • Laser ablation, and in-volume modification followed by wet etching are demonstrated. • Quality following laser processing and laser-material interactions are studied. - Abstract: Two methods to process sapphire using femtosecond laser pulses are demonstrated, namely ablation (surface), and in-volume laser modification followed by wet etching (subsurface). Firstly, the single and multipulse ablation threshold is determined and compared with previous literature results. A unique application of ablation is demonstrated by modifying the entrance aperture of water jet orifices. Laser ablation exhibits advantages in terms of geometric flexibility and resolution, however, defects in the form of edge outbreaks and poor surface quality are evident. Secondly, the role of material transformation, polarisation state and formation of multi-focus structures after in-volume laser modification is investigated in order to explain their influence during the wet etching process. Laser scanning and electron microscopy as well as electron backscatter diffraction measurements supported by ion beam polishing are used to better understand quality and laser-material interactions of the two demonstrated methods of processing.

  5. Q-Switching the Flash Ti: Sapphire Laser

    Energy Technology Data Exchange (ETDEWEB)

    Cone, Kelly

    2003-09-05

    The Stanford Linear Accelerator Center (SLAC) uses a flash lamp pumped Ti:Sapphire laser to generate the electron beam inside of the Linac. This laser system was installed at the SLAC Polarized Light Source in 1993. During the past, the system has been upgraded in several steps (eg. installation of Rhodium coated reflectors, cavity redesign, and remote controlled wavelength tunability). Q-switching the laser cavity to increase the peak pulse energy was successfully investigated and further improves the capabilities of the laser system for future polarized beam experiments. Two Pockels cells were used to perform the Q-switch and various diagnostics were used to characterize the modified laser pulse. The timing in relation to the laser trigger, pulse width, and pulse shape applied to the Q-switching Pockels cells (PC) were optimized. No damage to the laser cavity or optical elements occurred. At optimal conditions of Q-switching, the pulse energy of the laser increased from 0.4 mJ to over 3 mJ in a 300 ns pulse. The Q-switched pulse energy can be further increased by extending the hold-off pulse applied to the PC. The laser pulse produced by the Q-switch was long enough (full width half maximum (FWHM) > 200 ns) for pulse shaping and demonstrated good intensity stability (< 0.5% jitter). The increase in output power suggests that Q-switching will be used for future accelerator projects.

  6. Origin of Difference in Photocatalytic Activity of ZnO (002 Grown on a- and c-Face Sapphire

    Directory of Open Access Journals (Sweden)

    Guoqiang Li

    2014-01-01

    Full Text Available The oriented (002 ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002 ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.

  7. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  8. Shock Induced Emission from Sapphire in High-Pressure Phase of Rh2O3 (Ⅱ) Structure

    Institute of Scientific and Technical Information of China (English)

    ZHANG Dai-Yu; LIU Fu-Sheng; HAO Gao-Yu; SUN Yu-Huai

    2007-01-01

    @@ A distinct optical emission from the Rh2 O3 (Ⅱ) structural sapphire is observed under shock compression of 125,132, and 143 Gpa. The emission intensity continuously increases with the thickness of shocked sapphire. The colour temperature is determined to be about 4000K, which is obviously smaller than the reported value of the alpha phase alumina at the pressures below 80 Gpa. The present results suggest that the structural transformation will cause an obvious change of optical property in sapphire.

  9. Interface Consistency

    DEFF Research Database (Denmark)

    Staunstrup, Jørgen

    1998-01-01

    This paper proposes that Interface Consistency is an important issue for the development of modular designs. Byproviding a precise specification of component interfaces it becomes possible to check that separately developedcomponents use a common interface in a coherent matter thus avoiding a very...... significant source of design errors. Awide range of interface specifications are possible, the simplest form is a syntactical check of parameter types.However, today it is possible to do more sophisticated forms involving semantic checks....

  10. Interface models

    DEFF Research Database (Denmark)

    Ravn, Anders P.; Staunstrup, Jørgen

    1994-01-01

    This paper proposes a model for specifying interfaces between concurrently executing modules of a computing system. The model does not prescribe a particular type of communication protocol and is aimed at describing interfaces between both software and hardware modules or a combination of the two....... The model describes both functional and timing properties of an interface...

  11. Modified embedded atom method calculations of interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baskes, M.I.

    1996-05-01

    The Embedded Atom Method (EAM) is a semi-empirical calculational method developed a decade ago to calculate the properties of metallic systems. By including many-body effects this method has proven to be quite accurate in predicting bulk and surface properties of metals and alloys. Recent modifications have extended this applicability to a large number of elements in the periodic table. For example the modified EAM (MEAM) is able to include the bond-bending forces necessary to explain the elastic properties of semiconductors. This manuscript will briefly review the MEAM and its application to the binary systems discussed below. Two specific examples of interface behavior will be highlighted to show the wide applicability of the method. In the first example a thin overlayer of nickel on silicon will be studied. Note that this example is representative of an important technological class of materials, a metal on a semiconductor. Both the structure of the Ni/Si interface and its mechanical properties will be presented. In the second example the system aluminum on sapphire will be examined. Again the class of materials is quite different, a metal on an ionic material. The calculated structure and energetics of a number of (111) Al layers on the (0001) surface of sapphire will be compared to recent experiments.

  12. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  13. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  14. GROUP VELOCITY CONTROL SCHEME WITH LOW DISSIPATION

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    In order to prevent smearing the discontinuity, a modified term is added to the third order Upwind Compact Difference scheme to lower the dissipation error. Moreover, the dispersion error is controled to hold back the non-physical oscillation by means of the group velocity control. The scheme is used to simulate the interactions of shock-density stratified interface and the disturbed interface developing to vortex rollers. Numerical results are satisfactory.

  15. Revelation of Causes of Colour Change in Beryllium-Treated Sapphires

    Institute of Scientific and Technical Information of China (English)

    Pichet Limsuwan; Siwaporn Meejoo; Asanee Somdee; Kheamrutai Thamaphat; Treedej Kittiauchawal; Atitaya Siripinyanond; Jurek Krzystck

    2008-01-01

    Blue sapphires are treated with Be in oxidizing atmosphere to change the blue colour into yellow. Untreated and Be-treated samples are examined using laser ablation inductively coupled-plasma-mass spectrometry (LA-ICP-MS), electron spin resonance (ESR) and ultraviolet-visible (UV-vis) spectroscopy. The results show that the yellow colouration in Be-heated blue sapphires is not due to Be diffusion from the surface of sapphire. Be behaves as a sole catalyst in this process. We find that the charge transfer between the ferrous (Fe2+) and ferric (Fe3+) is the reason of the colour change. The above conclusions are confirmed by ESR measurements to determine the connections between the Fe3+ ions before and after Be-treated heat treatments.

  16. Sapphire hard X-ray Fabry-Perot resonators for synchrotron experiments.

    Science.gov (United States)

    Tsai, Yi Wei; Wu, Yu Hsin; Chang, Ying Yi; Liu, Wen Chung; Liu, Hong Lin; Chu, Chia Hong; Chen, Pei Chi; Lin, Pao Te; Fu, Chien Chung; Chang, Shih Lin

    2016-05-01

    Hard X-ray Fabry-Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al2O3, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X-rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X-ray cavity resonance and measurements using scanning electron microscopic and X-ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions.

  17. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  18. Stability of trapped charges in sapphires and alumina ceramics: Evaluation by secondary electron emission

    Science.gov (United States)

    Zarbout, K.; Si Ahmed, A.; Moya, G.; Bernardini, J.; Goeuriot, D.; Kallel, A.

    2008-03-01

    The stability of trapped charges in sapphires and alumina ceramics is characterized via an experimental parameter expressing the variation of the secondary electron emission yield between two electron injections performed in a scanning electron microscope. Two types of sapphires and polycrystalline alumina, which differ mainly by their impurity content, are investigated in the temperature range 300-663K. The stable trapping behavior in sapphires is attributed to trapping in different defects, whose nature depends on the purity level. In alumina ceramics, the ability to trap charges in a stable way is stronger in samples of high impurity content. In the low impurity samples, stable trapping is promoted when the grain diameter decreases, whereas the reverse is observed in high impurity materials. These behaviors can stem from a gettering effect occurring during sintering. The strong dependence of the variation of the secondary electron emission yield on the grain diameter and impurities enables a scaling of the stable trapping ability of alumina materials.

  19. Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method

    Science.gov (United States)

    Ma, Wencheng; Zhao, Wenhan; Wu, Ming; Ding, Guoqiang; Liu, Lijun

    2017-09-01

    Transient numerical calculations were carried out to predict the evolutions of temperature and thermal stress in sapphire single crystal during the cooling process by heat exchanger method (HEM). Internal radiation in the semitransparent sapphire crystal was taken into account using the finite volume method (FVM) in the global heat transfer model. The numerical results seem to indicate that the narrow bottom region of the sapphire crystal is subjected to high thermal stress during the cooling process, which could be responsible for the seed cracking of the as-grown crystal, while the thermal stress is relatively small in the central main body of the crystal, and is less than 10 MPa during the whole cooling process. The fast decrease of the thermal stress in the bottom region of the crystal during the initial stage of cooling process is dominated by the reduction of the cooling helium gas in the heat exchanger shaft, and is not significantly affected by the heating power reduction rate.

  20. Rate of F center formation in sapphire under low-energy low-fluence Ar+ irradiation

    Science.gov (United States)

    Epie, E. N.; Wijesundera, D. N.; Tilakaratne, B. P.; Chen, Q. Y.; Chu, W. K.

    2016-03-01

    Ionoluminescence, optical absorption spectroscopy and Rutherford backscattering spectrometry channelling (RBS-C) have been used to study the rate of F center formation with fluence in 170 keV Ar+ irradiated single crystals of α-Al2O3 (sapphire) at room temperature. Implantation fluences range between 1013 cm-2 and 5 ×1014 cm-2. F center density (NF) has been found to display an initial rapid linear increase with Ar+ fluence followed by saturation to a maximum value of 1.74 ×1015 cm-2. Experimental results show a 1-1 correlation between radiation damage in the oxygen sublattice and F center density. This suggest F center kinetics in sapphire under low-energy low-fluence Ar irradiation is a direct consequence of dynamic competition between oxygen defect creation and recombination. An attempt has also been made to extend this discussion to F center kinetics in sapphire under swift heavy ion irradiation.

  1. High-pressure sapphire cell for phase equilibria measurements of CO2/organic/water systems.

    Science.gov (United States)

    Pollet, Pamela; Ethier, Amy L; Senter, James C; Eckert, Charles A; Liotta, Charles L

    2014-01-24

    The high pressure sapphire cell apparatus was constructed to visually determine the composition of multiphase systems without physical sampling. Specifically, the sapphire cell enables visual data collection from multiple loadings to solve a set of material balances to precisely determine phase composition. Ternary phase diagrams can then be established to determine the proportion of each component in each phase at a given condition. In principle, any ternary system can be studied although ternary systems (gas-liquid-liquid) are the specific examples discussed herein. For instance, the ternary THF-Water-CO2 system was studied at 25 and 40 °C and is described herein. Of key importance, this technique does not require sampling. Circumventing the possible disturbance of the system equilibrium upon sampling, inherent measurement errors, and technical difficulties of physically sampling under pressure is a significant benefit of this technique. Perhaps as important, the sapphire cell also enables the direct visual observation of the phase behavior. In fact, as the CO2 pressure is increased, the homogeneous THF-Water solution phase splits at about 2 MPa. With this technique, it was possible to easily and clearly observe the cloud point and determine the composition of the newly formed phases as a function of pressure. The data acquired with the sapphire cell technique can be used for many applications. In our case, we measured swelling and composition for tunable solvents, like gas-expanded liquids, gas-expanded ionic liquids and Organic Aqueous Tunable Systems (OATS)(1-4). For the latest system, OATS, the high-pressure sapphire cell enabled the study of (1) phase behavior as a function of pressure and temperature, (2) composition of each phase (gas-liquid-liquid) as a function of pressure and temperature and (3) catalyst partitioning in the two liquid phases as a function of pressure and composition. Finally, the sapphire cell is an especially effective tool to gather

  2. Interface dermatitis

    Directory of Open Access Journals (Sweden)

    Rajiv Joshi

    2013-01-01

    Full Text Available Interface dermatitis includes diseases in which the primary pathology involves the dermo-epidermal junction. The salient histological findings include basal cell vacuolization, apoptotic keratinocytes (colloid or Civatte bodies, and obscuring of the dermo-epidermal junction by inflammatory cells. Secondary changes of the epidermis and papillary dermis along with type, distribution and density of inflammatory cells are used for the differential diagnoses of the various diseases that exhibit interface changes. Lupus erythematosus, dermatomyositis, lichen planus, graft versus host disease, erythema multiforme, fixed drug eruptions, lichen striatus, and pityriasis lichenoides are considered major interface diseases. Several other diseases (inflammatory, infective, and neoplastic may show interface changes.

  3. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Science.gov (United States)

    Marques, C.; Franco, N.; Alves, L. C.; da Silva, R. C.; Alves, E.; Safran, G.; McHargue, C. J.

    2007-04-01

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  4. Tunable Sum Frequency Mixing of a Ti∶sapphire Laser and a Nd∶YAG Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; YAO Jianquan; YU Yizhong; YU Xuanyi; XU Jingjun; ZHANG Guangyin

    2001-01-01

    In this paper the theoretical and experimental results of sum-frequency mixing of a Ti∶sapphire laser and a 1.064 μm Nd∶YAG laser are presented. By using two KTP crystals cut at θ=76° and 85° (φ=90° in both crystals), respectively, the sum-frequency mixing tuning range from 459.3 to 509.6 nm in one Ti∶sapphire laser setup is experimentally achieved. The maximum output energy was 14.6 mJ and the energy conversion efficiency was up to 15.2%.

  5. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Energy Technology Data Exchange (ETDEWEB)

    Marques, C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Franco, N. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, L.C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Silva, R.C. da [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, E. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal)]. E-mail: ealves@itn.pt; Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, C.J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2007-04-15

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 x 10{sup 17} cm{sup -2} at room temperature, followed by annealing at 1000 deg. C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  6. Intracavity frequency doubling of CW Ti:Sapphire laser utilising BiBO nonlinear crystal

    DEFF Research Database (Denmark)

    Thorhauge, Morten; Mortensen, Jesper Liltorp; Tidemand-Lichtenberg, Peter

    Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm.......Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm....

  7. Behaviors of optical and chemical state of Nb+ implanted sapphire after annealing

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of the radiation damage of sapphire crystal, produced by implantation with 380 keV Nb+ ion followed by annealing in a series of steps from 500 to 1100℃C at reducing atmosphere, was investigated in optical absorption and XPS measurements. It is found that the implanted niobium in sapphire is in different local environments with different chemical states after the annealing. The changes in optical density (OD) from the bands, based on the well known F-type centers, show that the annealing behavior of the radiation damage may be divided into different stages due to different mechanisms.

  8. Measurement for titanium density distribution on Ti:sapphire rods for high intensity pump source

    Energy Technology Data Exchange (ETDEWEB)

    Usami, Tsutomu; Nishimura, Akihiko; Sugiyama, Akira [Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan). Kansai Research Establishment

    2001-10-01

    A Ti:sapphire rod of 190 mm length made by Czochralski (CZ) technique was used in the flashlamp pumped high intensity laser for Yb:glass chirped pulse amplification. In the absorption spectroscopy of the rod immersed in an index matching liquid of methylene iodide, heterogeneous Ti{sup 3+} density distribution was measured along the direction of length. It has been first clarified that the Ti:sapphire rod grown by the CZ technique has 20% difference of the Ti{sup 3+} density at the both ends. (author)

  9. Sapphire: Relation between luminescence of starting materials and luminescence of single crystals

    Science.gov (United States)

    Mogilevsky, R.; Nedilko, S.; Sharafutdinova, L.; Burlay, S.; Sherbatskii, V.; Boyko, V.; Mittl, S.

    2009-10-01

    A relation between photoluminescence (PL) characteristics of different starting materials used for crystal growth and un-doped sapphire single crystals manufactured using various methods of crystal growth (Kyropolus, HEM, Czochralski, and EFG) was found. The crystals grown using the Verneuil starting material exhibited significant PL when any method of crystal growth was used. On the contrary, sapphire samples grown by the same technologies wherein the starting material was EMT HPDA R revealed very low PL. (HPDA R is produced by EMT, Inc., with proprietary and patented technology.)

  10. Velocity anticipation in the optimal velocity model

    Institute of Scientific and Technical Information of China (English)

    DONG Li-yun; WENG Xu-dan; LI Qing-ding

    2009-01-01

    In this paper,the velocity anticipation in the optimal velocity model (OVM) is investigated.The driver adjusts the velocity of his vehicle by the desired headway,which depends on both instantaneous headway and relative velocity.The effect of relative velocity is measured by a sensitivity function.A specific form of the sensitivity function is supposed and the involved parameters are determined by the both numerical simulation and empirical data.It is shown that inclusion of velocity anticipation enhances the stability of traffic flow.Numerical simulations show a good agreement with empirical data.This model provides a better description of real traffic,including the acceleration process from standing states and the deceleration process approaching a stopped car.

  11. Interface Screenings

    DEFF Research Database (Denmark)

    Thomsen, Bodil Marie Stavning

    2015-01-01

    and memories. From a transvisual perspective, the question is whether or not these (by now realized) diagrammatic modes involving the body in ubiquitous global media can be analysed in terms of the affects and events created in concrete interfaces. The examples used are filmic as felt sensations...... of an interface are invisible and not easy to describe....

  12. Fluid Interfaces

    DEFF Research Database (Denmark)

    Hansen, Klaus Marius

    2001-01-01

    Fluid interaction, interaction by the user with the system that causes few breakdowns, is essential to many user interfaces. We present two concrete software systems that try to support fluid interaction for different work practices. Furthermore, we present specificity, generality, and minimality...... as design goals for fluid interfaces....

  13. Interface Realisms

    DEFF Research Database (Denmark)

    Pold, Søren

    2005-01-01

    This article argues for seeing the interface as an important representational and aesthetic form with implications for postmodern culture and digital aesthetics. The interface emphasizes realism due in part to the desire for transparency in Human-Computer Interaction (HCI) and partly to the devel...

  14. Testing Interfaces

    DEFF Research Database (Denmark)

    Holbøll, Joachim T.; Henriksen, Mogens; Nilson, Jesper K.;

    1999-01-01

    The wide use of solid insulating materials combinations in combinations has introduced problems in the interfaces between components. The most common insulating materials are cross-linked polyethylene (XLPE), silicone rubber (SIR) and ethylene-propylene rubbers (EPR). Assemblies of these materials...... have caused major failures. In the Netherlands, a major black out was caused by interface problems in 150kV cable terminations, causing a cascade of breakdowns. There is a need to investigate the reasons for this and other similar breakdowns.The major problem is expected to lie in the interface between...... two different materials. Environmental influence, surface treatment, defects in materials and interface, design, pressure and rubbing are believed to have an effect on interface degradation. These factors are believed to increase the possibility of partial discharges (PD). PD will, with time, destroy...

  15. Strength degradation mechanisms in h-BN/NiAl coated sapphire fibres with a reactive Hf or Y interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Hajas, D.E. [Materials Chemistry, RWTH-Aachen University, Kopernikusstr. 16, 52074 Aachen (Germany)], E-mail: hajas@mch.rwth-aachen.de; Kyrsta, S. [Materials Chemistry, RWTH-Aachen University, Kopernikusstr. 16, 52074 Aachen (Germany); Richter, S.; Mayer, J. [Central Facility of Electron Microscopy, RWTH-Aachen University, Ahornstrasse 55, 52074 Aachen (Germany); Schneider, J.M. [Materials Chemistry, RWTH-Aachen University, Kopernikusstr. 16, 52074 Aachen (Germany)

    2008-09-15

    NiAl strengthened with ceramic fibres is considered as a load-bearing component in the combustion zone turbine blades. Sapphire fibres coated with hexagonal-boron nitride (h-BN) and Y (or Hf) interlayers and NiAl were investigated to strengthen the fibre matrix interface by compound formation with the transition metals introduced. Our goal is to identify strength degradation relevant mechanisms active during composite formation and application. Therefore, the tensile strength of coated fibres before and after annealing was measured to simulate the effect of composite fabrication. Strength degradation mechanisms were identified by electron microscopy. Chemical reactions between Y or Hf and Al{sub 2}O{sub 3}, as well as surface diffusion of Al{sub 2}O{sub 3} into irregularities in the adjacent coating, alter the surface morphology and may act as crack initiation sites. Based on these results, future strategies for avoiding or minimizing strength degradation during production of intermetallic matrix composites (IMCs) can be compiled.

  16. Growth mechanism and electronic properties of epitaxial In{sub 2}O{sub 3} films on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ch. Y.; Kirste, L.; Roehlig, C. C.; Koehler, K.; Cimalla, V.; Ambacher, O. [Fraunhofer-Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Morales, F. M.; Manuel, J. M.; Garcia, R. [Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Facultad de Ciencias, Universidad de Cadiz, Puerto Real, Cadiz 11510 (Spain)

    2011-11-01

    In this work, we report on the epitaxial growth of high-quality cubic indium oxide thick films on c-plane sapphire substrates using a two-step growth process. The epitaxial relationship of In{sub 2}O{sub 3} on (0001) Al{sub 2}O{sub 3} has been investigated. The (222) plane spacing and lattice parameter of a most strain-relaxed high-quality In{sub 2}O{sub 3} film have been determined to be 292.58 pm and 1013.53 pm, respectively. The electronic properties in dependence of the film thickness are interpreted using a three-region model. The density at the surface and interface totals (3.3{+-}1.5)x10{sup 13}cm{sup -2}, while the background electron density in the bulk was determined to be (2.4{+-}0.5)x10{sup 18}cm{sup -3}. Furthermore, post treatments such as irradiation via ultraviolet light and ozone oxidation have been found to influence only the surface layer, while the bulk electronic properties remain unchanged.

  17. Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    DING Bin-Feng

    2012-01-01

    A ZnO layer with rather good crystalline quality (Xmin =9.4%) is grown on a sapphire substrate by plasma enhanced chemical vapor deposition (PECVD).Rutherford backscattering (RBS)/channeling and high-resolution x-ray diffraction (XRD) are used to characterize the elastic strain in the ZnO epilayer.The tetragonal distortion is positive and depth dependent.It is highest near the interface and decreases towards the sample surface.By combining the results of RBS and XRD,the average elastic strains in the parallel and the perpendicular directions can be calculated to be 0.50% and -0.17%,respectively.

  18. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors...

  19. Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

    Science.gov (United States)

    Offord, Bruce W.

    1992-01-01

    In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

  20. Deep-ultraviolet frequency metrology with a narrowband titanium:sapphire laser

    NARCIS (Netherlands)

    Hannemann, S.

    2007-01-01

    Within the framework of this thesis resaerch project a narrow band titanium:sapphire laser was built. It provides nanosecond pulses that are subsequently upconverted to the deep ultraviolet frequency range. Absolute frequency calibration is achieved by linking the injection seeding light to a

  1. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  2. Laser-assisted microstructuring for Ti:sapphire channel-waveguide fabrication

    NARCIS (Netherlands)

    Crunteanu, A.; Pollnau, Markus; Jänchen, G.; Hibert, C.; Hoffmann, P.; Salathé, R.P.; Eason, R.W.; Shepherd, D.P.

    We report on the fabrication of Ti:sapphire channel waveguides. Such channel waveguides are of interest, e.g., as low-threshold tunable lasers. We investigated several structuring methods including ion beam implantation followed by wet chemical etching strip loading by polyimide spin coating and

  3. Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    WANG Gui-gen; ZHANG Ming-fu; ZUO Hong-bo; HE Xiao-dong; HAN Jie-cai

    2006-01-01

    The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.

  4. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  5. Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Grabowska, J.; Rajendra Kumar, R.T. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); McGlynn, E. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)], E-mail: enda.mcglynn@dcu.ie; Nanda, K.K. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); Newcomb, S.B. [Glebe Scientific Ltd., Newport, Co. Tipperary (Ireland); McNally, P.J.; O' Reilly, L. [School of Electronic Engineering/Research Institute for Networks and Communications Engineering, Dublin City University (Ireland); Mosnier, J.-P.; Henry, M.O. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)

    2008-02-29

    Epitaxially ordered zinc aluminate domains with sub-micron dimensions are formed on bare c-sapphire substrates using a vapour phase method (with vapour generated by carbothermal reduction of ZnO) at various temperatures and growth durations. A zinc aluminate (ZnAl{sub 2}O{sub 4}) layer is formed by reaction of the source materials (Zn and O) with the substrate. We observe crystallites with a well-defined epitaxial relationship on the sapphire substrate in addition to polycrystalline material. The epitaxially oriented deposit displays the form of characteristically twinned (singly or multiply) grains of sub-micron dimensions with three variants, consistent with the c-sapphire substrate symmetry. Scanning electron microscopy and transmission electron microscopy studies show that the formation of these grains is associated with the presence of extended defects in the sapphire substrate. Epitaxially ordered grains formed at higher temperatures show a change in the nature of the twin boundaries and epitaxial relations as a function of growth time, attributed to the effects of annealing during growth.

  6. High-power solid-state sapphire whispering gallery mode maser.

    Science.gov (United States)

    Creedon, Daniel L; Benmessaï, Karim; Tobar, Michael E; Hartnett, John G; Bourgeois, Pierre-Yves; Kersale, Yann; Le Floch, Jean-Michel; Giordano, Vincent

    2010-03-01

    We present new results on a cryogenic solid-state maser frequency standard, which relies on the excitation of whispering gallery (WG) modes within a doped monocrystalline sapphire resonator (alpha-Al2O3). Included substitutively within the highest purity HEMEX-grade sapphire crystal lattice are Fe2+ impurities at a concentration of parts per million, an unavoidable result of the manufacturing process. Mass conversion of Fe2+ to Fe3+ ions was achieved by thermally annealing the sapphire in air. Above-threshold maser oscillation was then excited in the resonator at zero applied DC magnetic field by pumping high-Q WG modes coincident in frequency with the electron spin resonance (ESR) energy levels of the Fe3+ spin population. A 2 stage annealing process was undertaken for a sapphire resonator with exceptionally low Fe3+ concentration, resulting in an improvement of 6 orders of magnitude in output power for this particular crystal, and exceeding the previous best implementation of our scheme in another crystal by nearly 20 dB. This represents an output signal 7 orders of magnitude more powerful than a typical commercial hydrogen maser. At this power level, we estimate a limit on the frequency stability of order 1 x 10(-17)/square root(tau) due to the Schawlow-Townes fundamental thermal noise limit.

  7. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

    DEFF Research Database (Denmark)

    König, Karsten; Andersen, Peter E.; Le, Tuan;

    2015-01-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...

  8. New sapphire and ruby components and their manufacture using diamond abrasives

    Science.gov (United States)

    Sauser, D.

    The properties of synthetic aluminum oxides (sapphire and ruby) and their applications in watchmaking (watch bearings and watchglasses) and as hard-wearing components such as centering devices for optical fibres and water jet nozzles for material cutting are discussed. Examples are given of the use of diamonds tools for machining such components, including sawing, drilling, grinding and polishing operations.

  9. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  10. "You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

    Science.gov (United States)

    Pappas, Christine

    2007-01-01

    Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

  11. A century of sapphire crystal growth: origin of the EFG method

    Science.gov (United States)

    Harris, Daniel C.

    2009-08-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Edge-Defined Film-Fed Growth (EFG) was invented by H. Labelle in the 1960s and the Heat Exchanger Method (HEM) was invented by F. Schmid and D. Viechnicki in 1967. Both methods were commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) was invented by Kh. S. Bagdasorov in the Soviet Union in the 1960s. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s. Today, half of the world's sapphire is produced by the GOI method.

  12. Microprocessor interfacing

    CERN Document Server

    Vears, R E

    2014-01-01

    Microprocessor Interfacing provides the coverage of the Business and Technician Education Council level NIII unit in Microprocessor Interfacing (syllabus U86/335). Composed of seven chapters, the book explains the foundation in microprocessor interfacing techniques in hardware and software that can be used for problem identification and solving. The book focuses on the 6502, Z80, and 6800/02 microprocessor families. The technique starts with signal conditioning, filtering, and cleaning before the signal can be processed. The signal conversion, from analog to digital or vice versa, is expl

  13. Molecular Dynamics Simulations of Interface Failure

    Science.gov (United States)

    Bachlechner, Martina E.; Cao, Deng; Leonard, Robert H.; Owens, Eli T.; Swan, Wm. Trevor, III; Ducatman, Samuel C.

    2007-03-01

    The mechanical integrity of silicon/silicon nitride interfaces is of great importance in their applications in micro electronics and solar cells. Large-scale molecular dynamics simulations are an excellent tool to study mechanical and structural failure of interfaces subjected to externally applied stresses and strains. When pulling the system parallel to the interface, cracks in silicon nitride and slip and pit formation in silicon are typical failure mechanisms. Hypervelocity impact perpendicular to the interface plane leads to structural transformation and delamination at the interface. Influence of system temperature, strain rate, impact velocity, and system size on type and characteristics of failure will be discussed.

  14. Uncertainty of the global oceanic CO2 exchange at the air-water interface induced by the choice of the gas exchange velocity formulation and the wind product: quantification and spatial analysis

    Science.gov (United States)

    Roobaert, Alizee; Laruelle, Goulven; Landschützer, Peter; Regnier, Pierre

    2017-04-01

    In lakes, rivers, estuaries and the ocean, the quantification of air-water CO2 exchange (FCO2) is still characterized by large uncertainties partly due to the lack of agreement over the parameterization of the gas exchange velocity (k). Although the ocean is generally regarded as the best constrained system because k is only controlled by the wind speed, numerous formulations are still currently used, leading to potentially large differences in FCO2. Here, a quantitative global spatial analysis of FCO2 is presented using several k-wind speed formulations in order to compare the effect of the choice of parameterization of k on FCO2. This analysis is performed at a 1 degree resolution using a sea surface pCO2 product generated using a two-step artificial neuronal network by Landschützer et al. (2015) over the 1991-2011 period. Four different global wind speed datasets (CCMP, ERA, NCEP 1 and NCEP 2) are also used to assess the effect of the choice of one wind speed product over the other when calculating the global and regional oceanic FCO2. Results indicate that this choice of wind speed product only leads to small discrepancies globally (6 %) except with NCEP 2 which produces a more intense global FCO2 compared to the other wind products. Regionally, theses differences are even more pronounced. For a given wind speed product, the choice of parametrization of k yields global FCO2 differences ranging from 7 % to 16 % depending on the wind product used. We also provide latitudinal profiles of FCO2 and its uncertainty calculated combining all combinations between the different k-relationships and the four wind speed products. Wind speeds >14 m s-1, which only account for 7 % of all observations, contributes disproportionately to the global oceanic FCO2 and, for this range of wind speeds, the uncertainty induced by the choice of formulation for k is maximum ( 50 %).

  15. High-velocity clouds

    NARCIS (Netherlands)

    Wakker, BP; vanWoerden, H

    1997-01-01

    High-velocity clouds (HVCs) consist of neutral hydrogen (HI) at velocities incompatible with a simple model of differential galactic rotation; in practice one uses \\v(LSR)\\ greater than or equal to 90 km/s to define HVCs. This review describes the main features of the sky and velocity distributions,

  16. Transverse Spectral Velocity Estimation

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt

    2014-01-01

    A transverse oscillation (TO)-based method for calculating the velocity spectrum for fully transverse flow is described. Current methods yield the mean velocity at one position, whereas the new method reveals the transverse velocity spectrum as a function of time at one spatial location. A convex...

  17. Dynamical transitions of a driven Ising interface.

    Science.gov (United States)

    Sahai, Manish K; Sengupta, Surajit

    2008-03-01

    We study the structure of an interface in a three-dimensional Ising system created by an external nonuniform field H(r,t) . H changes sign over a two-dimensional plane of arbitrary orientation. When the field is pulled with velocity v(e) , [i.e., H(r,t)=H(r-v(e)t) ], the interface undergoes several dynamical transitions. For low velocities it is pinned by the field profile and moves along with it, the distribution of local slopes undergoing a series of commensurate-incommensurate transitions. For large v(e) the interface depins and grows with Kardar-Parisi-Zhang exponents.

  18. Achieving strong doubling power by optical phase-locked Ti:sapphire laser and MOPA system

    Institute of Scientific and Technical Information of China (English)

    Yu Peng; Baike Lin; Qiang Wang; Yang Zhao; Ye Li; Jianping Cao; Zhanjun Fang; Erjun Zang

    2012-01-01

    We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal,whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods.The outputs of second-harmonic generation reach 310 mW,54.8% of the conversion efficiency from the Ti;sapphire laser with the crystal length of 10 mm,and 208 mW,59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm.It consists of heterodyning the Ti;sapphire laser and the MOPA system,and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator.The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti;sapphire laser to lock the two lasers in phase.A stable blue power of 520 mW is obtained,which supplies enough power for the cooling and trapping step of the strontium (Sr) optical lattice clock.Four stable isotopes of Sr,84Sr,86Sr,87Sr,and 88Sr,are detected by probing the laser during a strong 460.7-nm cycling transition (5s21S0-5s5p1P1).%We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal, whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods. The outputs of second-harmonic generation reach 310 mW, 54.8% of the conversion efficiency from the Ti:sapphire laser with the crystal length of 10 mm, and 208 mW, 59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm. It consists of heterodyning the Ti:sapphire laser and the MOPA system, and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator. The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti:sapphire laser to lock the two lasers in phase. A stable blue power of 520 mW is obtained, which supplies enough power for the cooling

  19. Velocity Field in a Vertical Foam Film

    Science.gov (United States)

    Seiwert, Jacopo; Kervil, Ronan; Nou, Soniraks; Cantat, Isabelle

    2017-01-01

    The drainage of vertical foam films governs their lifetime. For a foam film supported on a rectangular solid frame, when the interface presents a low resistance to shear, the drainage dynamics involves a complex flow pattern at the film scale, leading to a drainage time proportional to the frame width. Using an original velocimetry technique, based on fluorescent foam films and photobleaching, we measure the horizontal and vertical components of the velocity in a draining film, thus providing the first quantitative experimental evidence of this flow pattern. Upward velocities up to 10 cm /s are measured close to the lateral menisci, whereas a slower velocity field is obtained in the center of the film, with comparable downwards and horizontal components. Scaling laws are proposed for all characteristic velocities, coupling gravitational effects, and capillary suction.

  20. Research and Development of Seismic Data Processing System Based on Constrained Inversion for Interval Velocity by Utilizing Qt Graphic User Interface Library%约束层速度反演方法及其处理系统的Qt研发

    Institute of Scientific and Technical Information of China (English)

    周洪生; 程冰洁; 张薇; 高妍; 梁群

    2012-01-01

    三维约束层速度反演技术是建立在指数渐进边界形式速度趋势模型之上,结合了井资料、旁道数据,以阻尼因子全局约束计算层速度的方法.能有效识别层速度异常区域,适用于大倾角低幅构造,少井无井区的速度资料处理.在充分利用Windows操作系统的广泛应用及运行稳定的基础上,结合跨平台的c++图形用户界面库Qt,使用c/c++和fortran语言混合编程,完成了三维约束层速度反演处理系统的研发.该处理系统运用于南海琼东南BD地区实际资料表明:方法能较好的解决纵向连续及横向变速的问题,计算得到的剖面分层贴合层位曲线,能更清晰的描绘构造细节,为储层预测提供依据.%The constrained inversion for interval velocity is based on exponential asymptotically bounded velocity mode, combined with well data, bypath data and damping factor to compute the global restriction interval velocity. It can identify anomaly interval velocity area and finish the processing of the seismic data in high inclination angle and low amplitude structure area. The processing system is developed by utilizing the stable and high efficient features of Windows operating system, combined with a cross-platform Qt graphical user interface software library, written by mixed programming languages including c/c-H- and FORTRAN, and designed by the multi-tread and object-oriented programming, etc. The technologies obtain good application results in actual seismic data from South-Sea BD target area, it can resolve the question about vertical continuous and horizontal variation, the horizon in computed profile next to the actual horizon curve, and describe the structure detail clearly. Above all, the processing system provides a solution for the development of other seismic data processing software, and contributes to the reservoir prediction.

  1. Designing Interfaces

    CERN Document Server

    Tidwell, Jenifer

    2010-01-01

    Despite all of the UI toolkits available today, it's still not easy to design good application interfaces. This bestselling book is one of the few reliable sources to help you navigate through the maze of design options. By capturing UI best practices and reusable ideas as design patterns, Designing Interfaces provides solutions to common design problems that you can tailor to the situation at hand. This updated edition includes patterns for mobile apps and social media, as well as web applications and desktop software. Each pattern contains full-color examples and practical design advice th

  2. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high- Q factor whispering gallery modes

    Science.gov (United States)

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy

    2010-09-01

    Resonance modes in single crystal sapphire (α-Al2O3) exhibit extremely high electrical and mechanical Q factors ( ≈109 at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T3 dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify “magic temperatures” between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  3. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  4. Erbium-doped crystalline YAG planar and ridge waveguides on quartz and sapphire substrates: deposition and material characterisation

    Science.gov (United States)

    Facchini, G.; Zappettini, A.; Canali, A.; Martinelli, M.; Gabetta, G.; Tallarida, G.

    2001-06-01

    Er-doped Yttrium-Aluminium-Garnet (YAG) planar and ridge waveguides have been grown on quartz and sapphire substrates. The waveguides have been structurally, morphologically and stoichiometrically characterised by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Doping concentrations up to 5% have been successfully demonstrated. Deposition of channel waveguide on sapphire substrate results in a correct ridge shape.

  5. Evaluation of the Quality of Sapphire Using X-Ray Rocking Curves and Double-Crystal X-Ray Topography

    Science.gov (United States)

    1994-05-01

    hard, high-strength, chemically resistant optical windows; and sub- srates for the growth of epitaxial films. The quality of a sapphire crystal can... crystal diffractometer. Single- crystal sapphire may be grown by a variety of different methods, of which the more common are Verneuil (flame fusion...Linear features (L), which may represent slight variations in lattice parameter along the crystal growth front, or dislocation networks, ad small

  6. Gesture Interfaces

    NARCIS (Netherlands)

    Fikkert, F.W.

    2007-01-01

    Take away mouse and keyboard. Now, how do you interact with a computer? Especially one that has a display that is the size of an entire wall. One possibility is through gesture interfaces. Remember Minority Report? Cool stuff, but that was already five years ago.. So, what is already possible now an

  7. Manufacturing Interfaces

    NARCIS (Netherlands)

    Houten, van F.J.A.M.

    1992-01-01

    The paper identifies the changing needs and requirements with respect to the interfacing of manufacturing functions. It considers the manufacturing system, its components and their relationships from the technological and logistic point of view, against the background of concurrent engineering. Desi

  8. Testing Interfaces

    DEFF Research Database (Denmark)

    Holbøll, Joachim T.; Henriksen, Mogens; Nilson, Jesper K.;

    1999-01-01

    The wide use of solid insulating materials combinations in combinations has introduced problems in the interfaces between components. The most common insulating materials are cross-linked polyethylene (XLPE), silicone rubber (SIR) and ethylene-propylene rubbers (EPR). Assemblies of these materials...

  9. Level Set interface treatment and its application in Euler method

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Level Set interface treatment method is introduced into Euler method,which is employed for interface treatment method for multi-materials. Combined with the ghost fluid method,the moving interface is tracked. Fifth-order WENO spatial discretization and third-order TVD Runge-Kutta time discretization methods are used. Shock-wave action on bubble,implosion and velocity field Shock effect bubbles; implosion and velocity field are simulated by means of LS-MMIC3D programmed by C++. Nu-merical results show that the Level Set interface treatment method is effective and feasible for multi-material interface treatment in comparison with the WENO method.

  10. Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

    Science.gov (United States)

    Yerci, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydinli, A.; Turan, R.

    2006-10-01

    Silicon nanocrystals, average sizes ranging between 3 and 7nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800°C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.

  11. Process for the Φ130 sapphire window element with long distance and high resolution

    Science.gov (United States)

    Xu, Zengqi; Su, Ying; Lei, Jianli; Guo, Rui; Zhang, Feng; Guo, Xinlong; Liu, Xuanmin; Sun, Taohui

    2016-10-01

    With the process test for the choice of materials, the test materials and the molds, the abrasives, the temperature and the different machining process monitoring parameters of the polishing machine, the process method and the quality control technology were figured out for the Φ130 sapphire window element with long distance and high resolution (hereinafter referred to as window element), meantime, the optimum process condition was determined to machine the element. The results were that the high resolution imaging window was processed with the surface roughness Ra of 0.639nm, the transmission distortion of λ/10 (λ=632.8nm), the parallel error of 5″, the resolution of 1.47″ and the focal length of 5 km, which can satisfy the imaging requirements better for the military photoelectric device for sapphire window with long distance and high resolution.

  12. Growth and Characterization of InN Thin Films on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    XIE Zi-Li; ZHANG Rong; XIU Xiang-Qian; LIU Bin; LI Liang; HAN Ping; GU Shu-Lin; SHI Yi; ZHENG You-Dou

    2007-01-01

    Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition(MOCVD).By employing three-step layer buffers,the mirror-like layers on two-inch sapphire wafers have been obtained.The structural,optical and electrical characteristics of InN are investigated by x-ray diffraction,scanning electron microscopy,atomic force microscopy,photoluminescence and infrared optical absorpton.The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70 eV at room temperature.The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm2/Vs,and 3.9×1018cm-3,respectively.

  13. Degradation of picosecond temporal contrast of Ti:sapphire lasers with coherent pedestals.

    Science.gov (United States)

    Khodakovskiy, Nikita; Kalashnikov, Mikhail; Gontier, Emilien; Falcoz, Franck; Paul, Pierre-Mary

    2016-10-01

    Recompressed pulses from Ti:sapphire chirped-pulse lasers are accompanied by a slowly decaying post-pulse pedestal that is coherent with the main pulse. The pedestal typically consists of numerous pulses with temporal separation in the picosecond range. The source of this artifact lies in the Ti:sapphire active medium itself, both in the Kerr-lens mode-locked oscillator and in subsequent amplifiers. In the presence of substantial self-phase modulation, after recompression the post-pedestal generates a mirror-symmetric pre-pulse pedestal. This pedestal severely degrades the leading edge of the output pulse. This degradation is far more limiting than the original post-pedestal and severely lowers the achievable temporal contrast.

  14. Achieving λ/10 resolution CW STED nanoscopy with a Ti:Sapphire oscillator.

    Directory of Open Access Journals (Sweden)

    Yujia Liu

    Full Text Available In this report, a Ti:Sapphire oscillator was utilized to realize synchronization-free stimulated emission depletion (STED microscopy. With pump power of 4.6 W and sample irradiance of 310 mW, we achieved super-resolution as high as 71 nm. With synchronization-free STED, we imaged 200 nm nanospheres as well as all three cytoskeletal elements (microtubules, intermediate filaments, and actin filaments, clearly demonstrating the resolving power of synchronization-free STED over conventional diffraction limited imaging. It also allowed us to discover that, Dylight 650, exhibits improved performance over ATTO647N, a fluorophore frequently used in STED. Furthermore, we applied synchronization-free STED to image fluorescently-labeled intracellular viral RNA granules, which otherwise cannot be differentiated by confocal microscopy. Thanks to the widely available Ti:Sapphire oscillators in multiphoton imaging system, this work suggests easier access to setup super-resolution microscope via the synchronization-free STED.

  15. Characterization of superconducting magnesium-diboride films on glassy carbon and sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, E.; Zavala, E. P. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000 Mexico D. F. (Mexico); Rocha, M. F. [Escuela Superior de Ingenieria Mecanica y Electrica, IPN, Mexico D. F. (Mexico); Jergel, M.; Falcony, C. [Departamento de Fisica, CINVESTAV-IPN, Apartado postal 14-740, 07000 Mexico D. F. (Mexico)

    2008-02-15

    IBA methods were applied to measure elemental depth profiles of precursors and superconducting MgB{sub 2} thin films deposited on glassy carbon (Good Fellows) and sapphire (Al{sub 2}O{sub 3}) substrates. For each type of substrates we obtained a pair of samples i.e. one amorphous precursor and one superconducting film which were then characterized. A 3{sup H}e{sup +} beam was used to bombard both, precursors and superconducting films in order to obtain the samples elemental composition profiles. The zero resistance T{sub co} and the middle of transition T{sub cm} values were 26.0 K and 29.7 K for the MgB{sub 2} film deposited on glassy carbon substrate. In the case of sapphire substrate the T{sub co} and T{sub cm} values were 25.0 K and 27.9 K, respectively. (Author)

  16. Nearly octave-spanning frequency comb generation in AlN-on-sapphire microresonators

    CERN Document Server

    Liu, Xianwen; Xiong, Bing; Wang, Lai; Wang, Jian; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

    2016-01-01

    We report a nearly octave-spanning optical frequency comb generation with a coverage of $\\sim$1000 nm in continuous-wave pumped aluminum nitride (AlN)-on-sapphire microring resonators. Thanks to optimized device design and fabrication process, high-quality-factor AlN microrings with high cavity finesse and low insertion loss are demonstrated. By tailoring the cavity dimension, a broadband anomalous dispersion is secured to facilitate the frequency comb generation. Blue-shifted dispersive wave emission as well as stimulated Raman scattering is observed, which helps extend the comb spectrum coverage. Our work suggests that AlN-on-sapphire can be an appealing platform for integrated nonlinear optics.

  17. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  18. Use of Be(p,{alpha}) and Be(p,d) Reactions to Determine Be Content in Sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Franklyn, C. B. [Radiation Science Department, Necsa, PO Box 582, Pretoria 0001 (South Africa)

    2011-12-13

    Since natural coloured sapphire ({alpha}-Al{sub 2}O{sub 3}) commands a high gem stone market price there is a need for a reliable method of identifying artificially coloured sapphire that has an inherently lower value. Diffusing beryllium into sapphire at high temperatures results in a coloured stone virtually indistinguishable from a natural one. Beryllium can occur naturally in sapphire but at levels of <1 ppma. Beryllium diffused sapphire typically contains >10 ppma, which is difficult to determine in a non destructive way. It is possible to utilize nuclear reaction analysis techniques to determine the beryllium content in a macroscopically non destructive way. Kinematically ideal reactions are Be(p,{alpha}) and Be(p,d) which, for Ep = 0.5 to 0.9 MeV, exhibit distinct reaction product signatures well separated from other proton induced reactions in aluminium or oxygen. Due to the lack of comprehensive cross section data for the Be(p,{alpha}) and Be(p,d) reactions in the energy range of interest, a series of measurements were made at the Van de Graaff accelerator facility at Necsa to create a new data base. A further outcome of these measurements was a deviation in reported values for the non-Rutherfordian proton back-scatter cross section. These new data bases, which extend to Ep = 2.6MeV, can now facilitate a procedure for determining beryllium content in sapphire.

  19. Evaluation of heat extraction through sapphire fibers for the GW observatory KAGRA

    OpenAIRE

    Khalaidovski, Alexander; Hofmann, Gerd; CHEN, DAN; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Allen O.; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka mine. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise. To reduce seismic noise, the mirrors will also be suspended from multi-stage pendulums. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as heat load from thermal radiation will need to be extracted through th...

  20. High energy terahertz pulses from organic crystals: DAST and DSTMS pumped at Ti:sapphire wavelength

    CERN Document Server

    Monoszlai, B; Jazbinsek, M; Hauri, C P

    2013-01-01

    High energy terahertz pulses are produced by optical rectification (OR) in organic crystals DAST and DSTMS by a Ti:sapphire amplifier system centered at 0.8 microns. The simple scheme provides broadband spectra between 1 and 5 THz, when pumped by collimated 60 fs near-infrared pump pulse and it is scalable in energy. Fluence-dependent conversion efficiency and damage threshold are reported as well as optimized OR at visible wavelength.

  1. Silicon-on-Sapphire Waveguides: Mode-converting Couplers and Four-wave Mixing

    Science.gov (United States)

    2014-09-01

    width of the waveguides was between 1600 and 1900 nm . Figure 1 shows gain bands for a waveguide with 500- nm height and 1700 - nm width, demonstrating...1. Calculated conversion efficiency of four-wave mixing in 1700 - nm wide silicon-on-sapphire waveguide. Color bar indicates conversion efficiency in...dominance. Previous investigations show that this spectral range is of interest for applications that include free-space communications, laser radar

  2. ZnO Nanostructures Grown on AlN/Sapphire Substrates by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WEI Hong-Yuan; HU Wei-Guo; ZHANG Pan-Feng; LIU Xiang-Lin; ZHU Qin-Sheng; WANG Zhan-Guo

    2007-01-01

    ZnO nanorods and nanotubes are successful synthesized on AlN/sapphire substrates by metal-organic chemical vapour deposition (MOCVD). The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the A1N under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.

  3. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate.

    Science.gov (United States)

    Dantan, Aurélien; Laurat, Julien; Ourjoumtsev, Alexei; Tualle-Brouri, Rosa; Grangier, Philippe

    2007-07-09

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate.

  4. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  5. A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

    Science.gov (United States)

    Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

    2001-01-01

    A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

  6. High Power Widely Tunable Narrow Linewidth All-Solid-State Pulsed Titanium-Doped Sapphire Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; LI Xue; SHENG Quan; SHI Chun-Peng; YIN Su-Jia; LI Bin; YU Xuan-Yi; WEN Wu-Qi; YAO Jian-Quan

    2011-01-01

    We report a widely tunable, narrow linewidth, pulsed Ti:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser. By using four dense Bint glass prisms as intra-cavity dispersive elements, the output wavelength can be continuously tuned over 675-970 nm and the spectral linewidth is shortened to 0.5nm. The maximum output power of 6.65 W at 780 nm is obtained under 23.4 Wpump power with repetition rate of 5.5 kHz; corresponding to an conversion efficiency of 28.4%. Due to the gain-switching characteristics of the Ti:sapphire laser, the output pulse duration is as short as 17.6ns.%@@ We report a widely tunable,narrow linewidth,pulsed Th:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser.By using four dense flint glass prisms as intra-cavity dispersive elements,the output wavelength can be continuously tuned over 675-970nm and the spectral linewidth is shortened to 0.5 nm.The maximum output power of 6.65 W at 780 run is obtained under 23.4 W pump power with repetition rate of 5.5 kHz,corresponding to an conversion efficiency of 28.4%.Due to the gain-switching characteristics of the Ti:sapphire laser,the output pulse duration is as short as 17.6ns.

  7. Amplified spontaneous emission and its restraint in a terawatt Ti:sapphire amplifier

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Amplified spontaneous emission (ASE) and its restraint in a femtosecond Ti: sapphire chirped_pulse amplifier were investigated. The noises arising from ASE were effectively filtered out in the spatial, temporal and spectral domain. Pulses as short as 38 fs were amplified to peak power of 1.4 TW. The power ratio between the amplified femtosecond pulse and the ASE was higher than 106:1.

  8. Study of YBaCo{sub 4}O{sub 7+{delta}} thin films grown by sputtering technique on (1012)-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Montoya, J.F.; Izquierdo, J.L. [Laboratorio de Materiales Ceramicos y Vitreos, Departamento de Fisica, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia); Gomez, A. [Laboratorio de Caracterizacion de Materiales, Facultad de Minas, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia); Arnache, O.; Osorio, J. [Grupo de Estado Solido, Departamento de Fisica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia); Marin, J.; Paucar, C. [Laboratorio de Materiales Ceramicos y Vitreos, Departamento de Fisica, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia); Moran, O., E-mail: omoranc@unal.edu.c [Laboratorio de Materiales Ceramicos y Vitreos, Departamento de Fisica, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia)

    2011-03-01

    We report the growth of thin films of the cobaltite YBaCo{sub 4}O{sub 7+{delta}} by means of the dc magnetron sputtering technique at high oxygen pressure onto r (1012) sapphire substrates. The films were characterized according to their structural, morphological, electrical, magnetic, and optical properties. An analysis of the X-ray diffraction pattern indicates that the films grown on r-sapphire substrates are single phase polycrystalline. Despite the high growth temperature (850 {sup o}C), no indication of interface reaction (formation of BaAlO{sub 4} or Y{sub 2}O{sub 3}) is detected. Measurements of resistivity as a function of temperature reveal a semiconductor-like character of the grown films. No indication of possible transitions is observed in the temperature range 50-300 K. The electronic transport mechanism seems to be dominated by Mott variable range hopping (VRH) conduction. Fitting the VRH model to the experimental data allows one to estimate the density of states of the material at the Fermi level N(E{sub F}). The resistivity measured in magnetic fields as strong as 5 T increases notably, and positive magnetoresistance values as high as {approx} 60% at 100 K are obtained. Magnetization measurements show well defined hysteresis loops at 300 K and 5 K. Nevertheless, calculated values of the magnetization have ended up being too small for the ferro- or ferrimagnetic states. Raman spectra, in turn, allow one to identify bands associated with vibrating modes of CoO{sub 4} and YO{sub 6} in tetrahedral and octahedral configurations, respectively. Additional bands which seem to stem from Co ions in octahedral configuration are also clearly identified. Measurements of transmittance and reflectance show two well defined energy gaps at 3.7 and 2.2 eV.

  9. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  10. Milli-electronvolt monochromatization of hard X-rays with a sapphire backscattering monochromator

    Science.gov (United States)

    Sergueev, I.; Wille, H.-C.; Hermann, R. P.; Bessas, D.; Shvyd’ko, Yu. V.; Zając, M.; Rüffer, R.

    2011-01-01

    A sapphire backscattering monochromator with 1.1 (1) meV bandwidth for hard X-rays (20–40 keV) is reported. The optical quality of several sapphire crystals has been studied and the best crystal was chosen to work as the monochromator. The small energy bandwidth has been obtained by decreasing the crystal volume impinged upon by the beam and by choosing the crystal part with the best quality. The monochromator was tested at the energies of the nuclear resonances of 121Sb at 37.13 keV, 125Te at 35.49 keV, 119Sn at 23.88 keV, 149Sm at 22.50 keV and 151Eu at 21.54 keV. For each energy, specific reflections with sapphire temperatures in the 150–300 K region were chosen. Applications to nuclear inelastic scattering with these isotopes are demonstrated. PMID:21862862

  11. Growth of p-CdTe thin films on n-GaN/sapphire

    Science.gov (United States)

    Jung, Younghun; Chun, Seunju; Kim, Donghwan; Kim, Jihyun

    2011-07-01

    CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl 2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl 2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

  12. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  13. Preparation, properties and application of sapphire single-crystal fibers grown by the EFG method

    Directory of Open Access Journals (Sweden)

    Kubát J.

    2013-05-01

    Full Text Available Sapphire – the single crystal of aluminum oxide (Al2O3 – is one of the most important artificially produced materials. The sapphire fibres studied were grown in Crytur using the “edge-defined film-fed growth” (EFG technique. Their unique physical and chemical properties can be employed in various applications. Due to their high refractive index and a broad transmission band spanning the ultraviolet, visible and infrared bands, sapphire fibres are perfect waveguides in harsh environments. The current major applications are Er:YAG laser beam delivery and pyrometric and spectrometric measurements in furnaces, combustion engines, etc. In this paper we summarize an adjustment of the EFG method to grow thin filaments by giving possible molybdenum die designs. We investigated the fibres using an optical microscope and measured their transmission of an Er:YAG laser beam (2.94 μm. The attenuation of the tested samples is approximately 0.1 dB/cm.

  14. Layered MoS{sub 2} grown on c-sapphire by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Yen-Teng; Ma, Chun-Hao; Luong, Tien-Tung; Wei, Lin-Lung; Yen, Tzu-Chun; Chu, Yung-Ching; Tu, Yung-Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Hsu, Wei-Ting; Chang, Wen-Hao [Department of Electrophysics, National Chiao Tung University, Hsinchu (China); Pande, Krishna Prasad [Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu (China); Chang, Edward Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu (China)

    2015-03-01

    Layered growth of molybdenum disulphide (MoS{sub 2}) was successfully achieved by pulsed laser deposition (PLD) method on c -plane sapphire substrate. Growth of monolayer to a few monolayer MoS{sub 2}, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A{sub 1g}-E{sup 1}{sub 2g}) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm{sup -1}, suggesting a monolayer MoS{sub 2} was obtained. Two-dimensional (2D) layer growth of MoS{sub 2} is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002)MoS{sub 2} and [2 anti 1 anti 10] sapphire//[0 anti 1 anti 10]MoS{sub 2} is determined. The results imply that PLD is suitable for layered MoS{sub 2} growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS{sub 2}, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Tang Jun; Kang Chao-Yang; Li Li-Min; Liu Zhong-Liang; Yan Wen-Sheng; Wei Shi-Qiang; Xu Peng-Shou

    2012-01-01

    A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy(SSMBE)equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction(RHEED),X-ray diffractionφ scans,Raman spectroscopy,and near edge X-ray absorption fine structure(NEXAFS)spectroscopy.The results of the RHEED and φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 mm.

  16. Velocity selective optical pumping

    OpenAIRE

    Aminoff, C. G.; Pinard, M.

    1982-01-01

    We consider optical pumping with a quasi monochromatic tunable light beam, in the low intensity limit where a rate equation regime is obtained The velocity selective optical pumping (V.S.O.P.) introduces a correlation between atomic velocity and internal variables in the ground (or metastable) state. The aim of this article is to evaluate these atomic observables (orientation, alignment, population) as a function of velocity, using a phenomenological description of the relaxation effect of co...

  17. Interface learning

    DEFF Research Database (Denmark)

    Thorhauge, Sally

    2014-01-01

    "Interface learning - New goals for museum and upper secondary school collaboration" investigates and analyzes the learning that takes place when museums and upper secondary schools in Denmark work together in local partnerships to develop and carry out school-related, museum-based coursework...... for students. The research focuses on the learning that the students experience in the interface of the two learning environments: The formal learning environment of the upper secondary school and the informal learning environment of the museum. Focus is also on the learning that the teachers and museum...... professionals experience as a result of their collaboration. The dissertation demonstrates how a given partnership’s collaboration affects the students’ learning experiences when they are doing the coursework. The dissertation presents findings that museum-school partnerships can use in order to develop...

  18. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  19. Museets interface

    DEFF Research Database (Denmark)

    Pold, Søren

    2007-01-01

    Søren Pold gør sig overvejelser med udgangspunkt i museumsprojekterne Kongedragter.dk og Stigombord.dk. Han argumenterer for, at udviklingen af internettets interfaces skaber nye måder at se, forstå og interagere med kulturen på. Brugerne får nye medievaner og perceptionsmønstre, der må medtænkes i...

  20. Museets interface

    DEFF Research Database (Denmark)

    Pold, Søren

    2007-01-01

    Søren Pold gør sig overvejelser med udgangspunkt i museumsprojekterne Kongedragter.dk og Stigombord.dk. Han argumenterer for, at udviklingen af internettets interfaces skaber nye måder at se, forstå og interagere med kulturen på. Brugerne får nye medievaner og perceptionsmønstre, der må medtænkes i...

  1. Estimation of vector velocity

    DEFF Research Database (Denmark)

    2000-01-01

    Using a pulsed ultrasound field, the two-dimensional velocity vector can be determined with the invention. The method uses a transversally modulated ultrasound field for probing the moving medium under investigation. A modified autocorrelation approach is used in the velocity estimation. The new...

  2. Estimation of vector velocity

    DEFF Research Database (Denmark)

    2000-01-01

    Using a pulsed ultrasound field, the two-dimensional velocity vector can be determined with the invention. The method uses a transversally modulated ultrasound field for probing the moving medium under investigation. A modified autocorrelation approach is used in the velocity estimation. The new...

  3. An Advantage of the Equivalent Velocity Spectroscopy for Femtsecond Pulse Radiolysis

    CERN Document Server

    Kondoh, Takafumi; Tagawa, Seiichi; Tomosada, Hiroshi; Yang Jin Feng; Yoshida, Yoichi

    2005-01-01

    For studies of electron beam induced ultra-fast reaction process, femtosecond(fs) pulse radiolysis is under construction. To realize fs time resolution, fs electron and analyzing light pulses and their jitter compensation system are needed. About a 100fs electron pulse was generated by a photocathode RF gun linac and a magnetic pulse compressor. Synchronized Ti: Sapphire laser have a puleswidth about 160fs. And, it is significant to avoid degradation of time resolution caused by velocity difference between electron and analyzing light in a sample. In the 'Equivalent velocity spectroscopy' method, incident analyzing light is slant toward electron beam with an angle associated with refractive index of sample. Then, to overlap light wave front and electron pulse shape, electron pulse shape is slanted toward the direction of travel. As a result of the equivalent velocity spectroscopy for hydrated electrons, using slanted electron pulse shape, optical absorption rise time was about 1.4ps faster than normal electro...

  4. Active matter clusters at interfaces.

    Directory of Open Access Journals (Sweden)

    Katherine eCopenhagen

    2016-03-01

    Full Text Available Collective and directed motility or swarming is an emergent phenomenon displayed by many self-organized assemblies of active biological matter such as clusters of embryonic cells during tissue development, cancerous cells during tumor formation and metastasis, colonies of bacteria in a biofilm, or even flocks of birds and schools of fish at the macro-scale. Such clusters typically encounter very heterogeneous environments. What happens when a cluster encounters an interface between two different environments has implications for its function and fate. Here we study this problem by using a mathematical model of a cluster that treats it as a single cohesive unit that moves in two dimensions by exerting a force/torque per unit area whose magnitude depends on the nature of the local environment. We find that low speed (overdamped clusters encountering an interface with a moderate difference in properties can lead to refraction or even total internal reflection of the cluster. For large speeds (underdamped, where inertia dominates, the clusters show more complex behaviors crossing the interface multiple times and deviating from the predictable refraction and reflection for the low velocity clusters. We then present an extreme limit of the model in the absence of rotational damping where clusters can become stuck spiraling along the interface or move in large circular trajectories after leaving the interface. Our results show a wide range of behaviors that occur when collectively moving active biological matter moves across interfaces and these insights can be used to control motion by patterning environments.

  5. Active matter clusters at interfaces.

    Science.gov (United States)

    Copenhagen, Katherine; Gopinathan, Ajay

    2016-03-01

    Collective and directed motility or swarming is an emergent phenomenon displayed by many self-organized assemblies of active biological matter such as clusters of embryonic cells during tissue development, cancerous cells during tumor formation and metastasis, colonies of bacteria in a biofilm, or even flocks of birds and schools of fish at the macro-scale. Such clusters typically encounter very heterogeneous environments. What happens when a cluster encounters an interface between two different environments has implications for its function and fate. Here we study this problem by using a mathematical model of a cluster that treats it as a single cohesive unit that moves in two dimensions by exerting a force/torque per unit area whose magnitude depends on the nature of the local environment. We find that low speed (overdamped) clusters encountering an interface with a moderate difference in properties can lead to refraction or even total internal reflection of the cluster. For large speeds (underdamped), where inertia dominates, the clusters show more complex behaviors crossing the interface multiple times and deviating from the predictable refraction and reflection for the low velocity clusters. We then present an extreme limit of the model in the absence of rotational damping where clusters can become stuck spiraling along the interface or move in large circular trajectories after leaving the interface. Our results show a wide range of behaviors that occur when collectively moving active biological matter moves across interfaces and these insights can be used to control motion by patterning environments.

  6. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

    2015-06-01

    Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

  7. Origin of sapphires from a lamprophyre dike at Yogo Gulch, Montana, USA: Clues from their melt inclusions

    Science.gov (United States)

    Palke, Aaron C.; Renfro, Nathan D.; Berg, Richard B.

    2016-09-01

    Gem corundum (sapphire) has been mined from an ultramafic lamprophyre dike at Yogo Gulch in central Montana for over 100 years. The sapphires bear signs of corrosion showing that they were not in equilibrium with the lamprophyre that transported them; however, their genesis is poorly understood. We report here the observation of minute glassy melt inclusions in Yogo sapphires. These inclusions are Na- and Ca-rich, Fe-, Mg-, and K-poor silicate glasses with compositions unlike that of the host lamprophyre. Larger, recrystallized melt inclusions contain analcime and calcite drawing a striking resemblance to leucocratic ocelli in the lamprophyre. We suggest here that sapphires formed through partial melting of Al-rich rocks, likely as the lamprophyre pooled at the base of the continental crust. This idea is corroborated by MELTS calculations on a kyanite-eclogite protolith which was presumably derived from a troctolite precursor. These calculations suggest that corundum can form through peritectic melting of kyanite. Linking the melt inclusions petrologically to the lamprophyre represents a significant advancement in our understanding of sapphire genesis and sheds light on how mantle-derived magmas may interact with the continental crust on their ascent to the surface.

  8. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    CERN Document Server

    Karacheban, O; Hempel, M; Henschel, H; Lange, W; Leonard, J L; Levy, I; Lohmann, W; Schuwalow, S

    2015-01-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitoring systems at the Large Hadron Collider, FLASH or XFEL. Artificial diamond sensors are currently widely used as sensors in these systems. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm^2 size and 525 micrometer thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the dete...

  9. Superluminal Recession Velocities

    CERN Document Server

    Davis, T M; Davis, Tamara M.; Lineweaver, Charles H.

    2000-01-01

    Hubble's Law, v=HD (recession velocity is proportional to distance), is a theoretical result derived from the Friedmann-Robertson-Walker metric. v=HD applies at least as far as the particle horizon and in principle for all distances. Thus, galaxies with distances greater than D=c/H are receding from us with velocities greater than the speed of light and superluminal recession is a fundamental part of the general relativistic description of the expanding universe. This apparent contradiction of special relativity (SR) is often mistakenly remedied by converting redshift to velocity using SR. Here we show that galaxies with recession velocities faster than the speed of light are observable and that in all viable cosmological models, galaxies above a redshift of three are receding superluminally.

  10. Extreme Velocity Wind Sensor

    Science.gov (United States)

    Perotti, Jose; Voska, Ned (Technical Monitor)

    2002-01-01

    This presentation provides an overview of the development of new hurricane wind sensor (Extreme Velocity Wind Sensor) for the Kennedy Space Center (KSC) which is designed to withstand winds of up to three hundred miles an hour. The proposed Extreme Velocity Wind Sensor contains no moveable components that would be exposed to extreme wind conditions. Topics covered include: need for new hurricane wind sensor, conceptual design, software applications, computational fluid dynamic simulations of design concept, preliminary performance tests, and project status.

  11. Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions

    Science.gov (United States)

    Creighton, J. Randall; Coltrin, Michael E.; Figiel, Jeffrey J.

    2017-04-01

    Growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measurements are very difficult because of substrate transparency in the near-IR ( 900 nm) where conventional pyrometers detect radiation. The transparency problem can be solved by using a mid-IR pyrometer operating at a wavelength ( 7500 nm) where sapphire is opaque. We employ a mid-IR pyrometer to measure the sapphire wafer temperature and simultaneously a near-IR pyrometer to measure wafer pocket temperature, while varying reactor pressure in both a N2 and H2 ambient. Near 1300 °C, as the reactor pressure is lowered from 300 Torr to 10 Torr the wafer temperature drops dramatically, and the ∆T between the pocket and wafer increases from 20 °C to 250 °C. Without the mid-IR pyrometer the large wafer temperature change with pressure would not have been noted. In order to explain this behavior we have developed a quasi-2D thermal model that includes a proper accounting of the pressure-dependent thermal contact resistance, and also accounts for sapphire optical transmission. The model and experimental results demonstrate that at most growth conditions the majority of the heat is transported from the wafer pocket to the wafer via gas conduction, in the free molecular flow limit. In this limit gas conductivity is independent of gap size but first order in pressure, and can quantitatively explain results from 20 to 300 Torr. Further analysis yields a measure of the thermal accommodation coefficients; α(H2) =0.23, α(N2) =0.50, which are in the range typically measured.

  12. Effect of Ti:Sapphire-femtosecond laser on the surface roughness of ceramics.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-12-01

    Some of these adult patients have ceramic crowns, to which orthodontists have concerns about bonding brackets. The aim of the present study was to evaluate the effect of a Ti:Sapphire femtosecond (fs) laser (Integra-C-3.5, Quantronix, NY) on the surface roughness of two ceramic surfaces (feldspathic and IPS Empress e-Max) and to compare results with those of two other lasers (Er:YAG and Nd:YAG) and conventional techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. Ceramic discs were fabricated (n = 150) and divided into two groups, each of which was then divided into five subgroups prepared with Ti:Sapphire fs, Nd:YAG, or Er:YAG lasers, sandblasting, or HF acid (n = 15). The surface roughness of the ceramic discs was evaluated using a profilometer (Mitotoyo Surf Test SJ 201 P/M; Mitutoyo Corp, Japan) before and after each surface treatment. Three traces were recorded for each specimen at three different locations in each direction, providing nine measurements per sample, which were then averaged to obtain the surface roughness value. Data were analyzed using the Wilcoxon signed-rank test (P laser was associated with the highest mean roughness value. AFM images of the ceramic surfaces treated confirmed that the fs-laser-treated surfaces had the highest degree of irregularity. Within the limitations of this in vitro study, the Ti:Sapphire fs laser yielded the highest surface roughness and could be an alternative ceramic surface treatment to increase bond strength. © 2015 Wiley Periodicals, Inc.

  13. Microstructure characterization and optical properties of sapphire after helium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Mian; Yang, Liang [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Shen, Huahai [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Wei [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xiang, Xia, E-mail: xiaxiang@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Wanguo, E-mail: wgzheng_caep@sina.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Guo, Decheng [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Huang, Jin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, Kai [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Yuan, Xiaodong, E-mail: yxd66my@163.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-06-15

    The (0 0 0 1) sapphire samples are irradiated with 60 keV helium ions at the fluences of 5 × 10{sup 16}, 1 × 10{sup 17}and 5 × 10{sup 17} ions/cm{sup 2} at room temperature. After implantation, two broad absorption bands at 320–460 and 480–700 nm are observed and their intensities increase with the increasing ion fluence. The grazing incidence X-ray diffraction results indicate that the {0 0 0 1} diffraction peaks of sapphire decrease and broaden due to the disorientation of the generated crystallites after ion irradiation. The microstructure evolution is examined by the scanning and transmission electron microscopes. The surface becomes rough because of the aggregation of helium bubbles and migration towards the surface. There is a lattice expansion up to ∼4.5% in the implanted area and the lattice distortion measured from dispersion of (1 1 0) diffraction is ∼4.6°. Such strain of crystal lattice is rather large and leads to contrast fluctuation at scale of 1–2 nm (the bubble size). The laser induced damage threshold (LIDT) is investigated to understand the effect of helium ion beam irradiation on the laser damage resistance of sapphire components and the results show that the LIDT decreases from 5.4 to 2.5 J/cm{sup 2} due to the absorptive color centers, helium bubbles and defects induced by helium ion implantation. The laser damage morphologies of samples before and after ion implantation are also presented.

  14. Algorithms of wave reflective critical angle on interface

    Science.gov (United States)

    Zhang, YongGang; Zhang, JianXue; Jiao, Lin; Li, Qinghong

    2017-02-01

    This article is in connection with calculating of reflection critical angle on interface, author has found that reflective wave have a quarter wavelength effects and deduced both absolute and relative reflection critical Angle calculation formulas. The two formulas can easy solve the question of reflection critical angle on interface of one side of the air where it is not calculated by Snell's law. Snell's law only reveals that rate of the wave velocity projected to the interface, the methods of this paper reveal the normal component of wave velocity on the interface relationship. The methods will be widely used in various fields such as light, electromagnetic waves, sound waves and water waves etc.

  15. Pulse formation and characteristics of the cw mode-locked titanium-doped sapphire laser

    Science.gov (United States)

    Zschocke, Wolfgang; Stamm, Uwe; Heumann, Ernst; Ledig, Mario; Guenzel, Uwe; Kvapil, Jiri; Koselja, Michael P.; Kubelka, Jiri

    1991-10-01

    We report on measurements of transient and steady-state pulse characteristics of an acousto- optically mode-locked titanium-doped sapphire laser. During the pulse evolution, oscillations in the pulse width and pulse energy are found. A steady state is reached after about 40 to 60 microsecond(s) . The steady-state pulse width is strongly influenced by the mode-locking loss as well as the intracavity bandwidth. Shortest pulses of typically 15 ps are obtained. The experiment is compared with results of a simple computer simulation.

  16. Long-term optical phase locking between femtosecond Ti:sapphire and Cr:forsterite lasers

    Science.gov (United States)

    Kobayashi, Yohei; Yoshitomi, Dai; Kakehata, Masayuki; Takada, Hideyuki; Torizuka, Kenji

    2005-09-01

    Long-term optical phase-coherent two-color femtosecond pulses were generated by use of passively timing-synchronized Ti:sapphire and Cr:forsterite lasers. The relative carrier-envelope phase relation was fixed by an active feedback loop. The accumulated phase noise from 10 mHz to 1 MHz of the locked beat note was 0.43 rad, showing tight phase locking. The optical frequency fluctuation between two femtosecond combs was submillihertz, with a 1 s averaged counter measurement over 3400 s, leading to a long-term femtosecond frequency-comb connection.

  17. A 10-Hz terawatt class Ti:sapphire laser system: Development and applications

    Indian Academy of Sciences (India)

    A K Sharma; J Smedley; T Tsang; T Rao

    2010-11-01

    We developed a two-stage Ti:sapphire laser system to generate 16 mJ/80 fs laser pulses at a pulse repetition rate of 10 Hz. The key deriver for the present design is implementing a highly efficient symmetric confocal pre-amplifier and employing a simple, inexpensive synchronization scheme relying only on a commercial digital delay generator. We characterized the amplified pulses in spatial, spectral and temporal domains. The laser system was used to investigate various nonlinear optical processes, and to modify the optical properties of metal and semiconductor surfaces. We are currently building a third amplifier to boost the laser power to the multi-terawatt range.

  18. Grating-coupled silicon-on-sapphire integrated slot waveguides operating at mid-infrared wavelengths.

    Science.gov (United States)

    Zou, Yi; Subbaraman, Harish; Chakravarty, Swapnajit; Xu, Xiaochuan; Hosseini, Amir; Lai, Wei-Cheng; Wray, Parker; Chen, Ray T

    2014-05-15

    We demonstrate subwavelength bidirectional grating (SWG) coupled slot waveguide fabricated in silicon-on-sapphire for transverse electric polarized wave operation at 3.4 μm wavelength. Coupling efficiency of 29% for SWG coupler is experimentally achieved. Propagation loss of 11  dB/cm has been experimentally obtained for slot waveguides. Two-step taper mode converters with an insertion loss of 0.13 dB are used to gradually convert the strip waveguide mode into slot waveguide mode.

  19. Autonomous cryogenic sapphire oscillators employing low vibration pulse-tube cryocoolers at NMIJ

    Science.gov (United States)

    Ikegami, Takeshi; Watabe, Ken-ichi; Yanagimachi, Shinya; Takamizawa, Akifumi; Hartnett, John G.

    2016-06-01

    Two liquid-helium-cooled cryogenic sapphire-resonator oscillators (CSOs), have been modified to operate using cryo-refrigerators and low-vibration cryostats. The Allan deviation of the first CSO was evaluated to be better than 2 x 10-15 for averaging times of 1 s to 30 000 s, which is better than that of the original liquid helium cooled CSO. The Allan deviation of the second CSO is better than 4 x 10-15 from 1 s to 6 000 s averaging time.

  20. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

    Institute of Scientific and Technical Information of China (English)

    WU Meng; ZENG Yi-Ping; WANG Jun-Xi; HU Qiang

    2011-01-01

    @@ A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal- organic chemical vapor deposition (MOCVD).The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered.Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed.A pattern model is also proposed to analyze the possible mechanisms in atomic scale.

  1. Ultrahigh resolution optical coherence tomography with femtosecond Ti:sapphire laser and photonic crystal fiber

    Institute of Scientific and Technical Information of China (English)

    XUE Ping; James G FUJIMOTO

    2008-01-01

    Optical coherence tomography (OCT) with ultrahigh axial resolution was achieved by the super-contin- uum generated by coupling femtosecond pulses from a commercial Ti :sapphire laser into an air-silica microstructure fiber. The visible spectrum of the super-continuum from 450 to 700 nm centered at 540 nm can be generated. A free-space axial OCT resolution of 0.64 IJm was achieved. The sensitivity of OCT system was 108 dB with incident light power 3 mW at sample, only 7dB below the theoretical limit. Subcellular OCT imaging was also demonstrated, showing great potential for biomedical application.

  2. Analysis of tunable picosecond pulse generation from a distributed feedback Ti:sapphire laser

    Institute of Scientific and Technical Information of China (English)

    Hong Zhi; Yao Xiao-Ke

    2004-01-01

    A distributed feedback Ti:sapphire laser (DFTL) pumped by a 532nm Q-switched pulse is proposed for the generation of tunable picosecond pulses. With coupled rate equation model, the temporal characteristics of DFTL are obtained. The numerical solutions show that the DFTL pulse with a 50-ps pulse duration and as much as 3.SmJ pulse energy can be obtained under 40-m J, 5-ns pulse pumping. The dependence of output pulse width on the laser crystal's length, pumping pulse duration, and pumping rate is also discussed in detail.

  3. Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching.

    Science.gov (United States)

    Moser, Rüdiger; Ojha, Nirdesh; Kunzer, Michael; Schwarz, Ulrich T

    2011-11-21

    We demonstrate the realization of sub-surface channels in sapphire prepared by ultraviolet picosecond laser irradiation and subsequent selective wet etching. By optimizing the pulse energy and the separation between individual laser pulses, an optimization of channel length can be achieved with an aspect ratio as high as 3200. Due to strong variation in channel length, further investigation was done to improve the reproducibility. By multiple irradiations the standard deviation of the channel length could be reduced to 2.2%. The achieved channel length together with the high reproducibility and the use of a commercial picosecond laser system makes the process attractive for industrial application.

  4. Containerless laser-induced flourescence study of vaporization and optical properties for sapphire and alumina

    Science.gov (United States)

    Nordine, Paul C.; Schiffman, Robert A.

    1988-01-01

    Evaporation of aluminum oxide was studied from 1800 to 2327 K by laser-induced flourescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO2 laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al2O3. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

  5. Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods

    Science.gov (United States)

    Boquillon, J. P.; Said, J.

    1992-04-01

    The design and the development of a flashlamp-pumped Ti:Sapphire laser is described. Design criteria are discussed and performance improvements using different types of fluorescent UV converters or filters, such as organic dyes or doped glass are presented. We have tested different laser rods at various Ti-concentrations obtained by Verneuil or Czochralski growth techniques. The maximum laser output energy of 540 mJ with a differential efficiency up to 1% was achieved by using only a pyrex filter surrounding the laser rod.

  6. A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

    DEFF Research Database (Denmark)

    Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

    2010-01-01

    We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

  7. Measurement of Birefringence of Low-Loss, High-Reflectance Coating of M-Axis Sapphire

    OpenAIRE

    2001-01-01

    The birefringence of a low-loss, high-reflectance coating applied to an 8-cm-diameter sapphire crystal grown in the m-axis direction has been mapped. By monitoring the transmission of a high-finesse Fabry-Perot cavity as a function of the polarization of the input light, we find an upper limit for the magnitude of the birefringence of 2.5 x 10^-4 rad and an upper limit in the variation in direction of the birefringence of 10 deg. These values are sufficiently small to allow consideration of m...

  8. Synchronization of an Ultrafast Ti:Sapphire Laser to the S-Band Microwave

    Institute of Scientific and Technical Information of China (English)

    LIU Sheng-Guang; WANG Ming-Kai; SUN Da-Rui; DAI Jian-Ping; LI Yong-Gui

    2004-01-01

    @@ We have synchronized a 102-MHz ultrafast self-mode-locked Ti:sapphire laser to a 2856-MHz rf source with the sample-locking technology. The relative root-mean-square time-jitter is 0.57ps and the maximum time jitter is 2.60ps. This is the first time that synchronization between the ultrafast laser pulse and the s-band microwave has been accomplished in China. Potential applications include synchronization of lasers and rf power sources in particle accelerator experiments and high-resolution pump-probe experiments.

  9. All solid-state, injection-seeded Ti: sapphire ring laser

    Institute of Scientific and Technical Information of China (English)

    Ting Yu; Weibiao Chen; Jun Zhou; Jinzi Bi; Junwen Cui

    2005-01-01

    @@ In this letter, we present an all solid-state, injection-seeded Ti:sapphire laser. The laser is pumped by a laser diode pumped frequency-doubled Nd:YAG laser, and injection-seeded by an external cavity laser diode with the wavelength between 770 and 780 nm. The single longitude mode and the doubling efficiency of the laser are obtained after injection seeding. The experimental setup and relative results are reported.It is a good candidate laser source for mobile differential absorption lidar (DIAL) system.

  10. Homogenous Crack-Free Large Size YBCO/YSZ/Sapphire Films for Application

    Science.gov (United States)

    Almog, B.; Azoulay, M.; Deutscher, G.

    2006-09-01

    YBa2Cu3O7-δ (YBCO) films grown on Sapphire are highly suitable for applications. The production of large size (2-3″) homogeneous, thick (d ⩾ 600nm) films of high quality is of major importance. We report the growth of such films using a buffer layer of Yttrium-stabilized ZrO2(YSZ). The films are highly homogeneous and show excellent mechanical properties. They exhibit no sign of cracking even after many thermal cycles. Their critical thickness exceeds 1000nm. However, because of the large lattice mismatch there is a decrease in the electric properties(increases Rs, decreases jc).

  11. Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method

    Science.gov (United States)

    Samanta, Gaurab; Yeckel, Andrew; Bourret-Courchesne, Edith D.; Derby, Jeffrey J.

    2012-11-01

    The micro-pulling-down (μ-PD) crystal growth of sapphire fibers, whose steady-state limits were the focus of our prior study [Samanta et al., Journal of Crystal Growth 335 (2011) 148-159], is further examined using a parametric sensitivity computation derived by linearizing the nonlinear model around a quasi-steady-state (QSS). In addition, transient analyses are performed to assess inherent stability and dynamic responses in this μ-PD system. Information from these two approaches enlarges our understanding of this particular process, and the approaches themselves are put forth as valuable complements to classical QSS analysis.

  12. Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Lipski, Frank; Roesch, Rudolf; Scholz, Ferdinand [Institute of Optoelectronics, University of Ulm (Germany)

    2010-07-01

    We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution X-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400 arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.

  13. Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

    Science.gov (United States)

    Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo

    2017-09-01

    The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.

  14. Multimode interference and a white light scanning Michelson interferometer with a 400-mm sapphire fiber sensing head

    Science.gov (United States)

    Li, Tianchu; May, Russell G.; Wang, Anbo; Claus, Richard O.

    1998-08-01

    In this paper we present the analysis of multimode (MM) interference induced by MM fiber interferometers and report the development of a white light scanning fiber Michelson interferometer with a sapphire fiber sensing head for the measurement of position-distance at high temperatures. The 'mode fading' effect in standard graded 50/125 micrometers fiber and independent 'inter-mode interference' in 100 micrometers step index profile fiber are discussed. By means of the 'mode selecting' technique, proposed and developed in this work, we demonstrated white light fringes with signal to noise ratios of more than 12 with a sensing head composed of a 400 mm long lead sapphire fiber and an uncoated sapphire target fiber.

  15. Antibody-forming cells and serum hemolysin responses of pastel and sapphire mink inoculated with Aleutian disease virus.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J

    1973-11-01

    The effect of Aleutian disease virus (ADV) on serum hemolysin titers and antibody-forming cells in lymph nodes and spleens of sapphire and pastel mink inoculated with goat erythrocytes (G-RBC) was investigated. ADV injected 1 day after primary antigenic stimulation with G-RBC did not depress the immune responses of either color phase for a period of 26 days. However, when G-RBC were injected 47 days after ADV, both the number of antibody-forming cells and hemolysin titers were more markedly depressed in sapphire than in pastel mink. The results are discussed in relation to the greater susceptibility of sapphire mink and the variable susceptibility of pastel mink to the Pullman isolate of ADV.

  16. Reliable Diameter Control of Carbon Nanotube Nanobundles Using Withdrawal Velocity

    Science.gov (United States)

    Shin, Jung Hwal; Kim, Kanghyun; An, Taechang; Choi, WooSeok; Lim, Geunbae

    2016-09-01

    Carbon nanotube (CNT) nanobundles are widely used in nanoscale imaging, fabrication, and electrochemical and biological sensing. The diameter of CNT nanobundles should be controlled precisely, because it is an important factor in determining electrode performance. Here, we fabricated CNT nanobundles on tungsten tips using dielectrophoresis (DEP) force and controlled their diameters by varying the withdrawal velocity of the tungsten tips. Withdrawal velocity pulling away from the liquid-air interface could be an important, reliable parameter to control the diameter of CNT nanobundles. The withdrawal velocity was controlled automatically and precisely with a one-dimensional motorized stage. The effect of the withdrawal velocity on the diameter of CNT nanobundles was analyzed theoretically and compared with the experimental results. Based on the attachment efficiency, the withdrawal velocity is inversely proportional to the diameter of the CNT nanobundles; this has been demonstrated experimentally. Control of the withdrawal velocity will play an important role in fabricating CNT nanobundles using DEP phenomena.

  17. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    Science.gov (United States)

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10(5) Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ1, τ2 and τ3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ1, τ2 and τ3 of 0.10, 0.73 and 4.02 min, respectively).

  18. Particles dispersion on fluid-liquid interfaces

    Institute of Scientific and Technical Information of China (English)

    Sathish Gurupatham; Bhavin Dalal; Md. Shahadat Hossain; Ian S. Fischer; Pushpendra Singh; Daniel D. Joseph

    2011-01-01

    This paper is concerned with the dispersion of particles on the fluid-liquid interface. In a previous study we have shown that when small particles,e.g.,flour,pollen,glass beads,etc.,contact an air-liquid interface,they disperse rapidly as ifthey were in an explosion. The rapid dispersion is due to the fact that the capillary force pulls particles into the interface causing them to accelerate to a large velocity. In this paper we show that motion of particles normal to the interface is inertia dominated: they oscillate vertically about their equilibrium position before coming to rest under viscous drag. This vertical motion of a particle causes a radially-outward lateral (secondary) flow on the interface that causes nearby particles to move away. The dispersion on a liquid-liquid interface,which is the primary focus of this study,was relatively weaker than on an air-liquid interface,and occurred over a longer period of time. When falling through an upper liquid the particles have a slower velocity than when falling through air because the liquid has a greater viscosity. Another difference for the liquid-liquid interface is that the separation of particles begins in the upper liquid before the particles reach the interface. The rate of dispersion depended on the size of the particles,the densities of the particle and liquids,the viscosities of the liquids involved,and the contact angle. For small particles,partial pinning and hysteresis of the three-phase contact line on the surface of the particle during adsorption on liquid-liquid interfaces was also important. The frequency of oscillation of particles about their floating equilibrium increased with decreasing particle size on both air-water and liquid-liquid interfaces,and the time to reach equilibrium decreased with decreasing particle size. These results are in agreement with our analysis.

  19. Velocities in Solar Pores

    Science.gov (United States)

    Balasubramaniam, K. S.; Keil, S. L.; Smaldone, L. A.

    1996-05-01

    We investigate the three dimensional structure of solar pores and their surroundings using high spatial and spectral resolution data. We present evidence that surface velocities decrease around pores with a corresponding increase in the line-of-sight (LOS) velocities. LOS velocities in pores increase with the strength of the magnetic field. Surface velocities show convergence toward a weak downflow which appear to trace boundaries resembling meso-granular and super granular flows. The observed magnetic fields in the pores appear near these boundaries. We analyze the vertical velocity structure in pores and show that they generally have downflows decreasing exponentially with height, with a scale height of about 90 km. Evidence is also presented for the expanding nature of flux tubes. Finally we describe a phenomenological model for pores. This work was supported by AFOSR Task 2311G3. LAS was partially supported by the Progetto Nazionale Astrofisica e Fisica Cosmica of MURST and Scambi Internazionali of the Universita degli Studi di Napoli Frederico II. National Solar Observatory, NOAO, is operated for the National Science Foundation by AURA, Inc.

  20. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intra- cavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  1. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  2. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    ZHAO YanYing; WANG Peng; ZHANG Wei; TIAN JinRong; WEI ZhiYi

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intracavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  3. Quantitative velocity modulation spectroscopy

    Science.gov (United States)

    Hodges, James N.; McCall, Benjamin J.

    2016-05-01

    Velocity Modulation Spectroscopy (VMS) is arguably the most important development in the 20th century for spectroscopic study of molecular ions. For decades, interpretation of VMS lineshapes has presented challenges due to the intrinsic covariance of fit parameters including velocity modulation amplitude, linewidth, and intensity. This limitation has stifled the growth of this technique into the quantitative realm. In this work, we show that subtle changes in the lineshape can be used to help address this complexity. This allows for determination of the linewidth, intensity relative to other transitions, velocity modulation amplitude, and electric field strength in the positive column of a glow discharge. Additionally, we explain the large homogeneous component of the linewidth that has been previously described. Using this component, the ion mobility can be determined.

  4. Demonstrating the feasibility of heat extraction through sapphire fibers for the GW observatory KAGRA

    CERN Document Server

    Khalaidovski, Alexander; Chen, Dan; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Alan O; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka observatory. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise and suspended from multi-stage pendulums to reduce seismic noise. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as originating from thermal radiation will need to be extracted through the last suspension stage. This stage will consist of four thin sapphire fibers with larger heads necessary to connect the fibers to both the mirror and the upper stage. In this paper, we discuss heat conductivity measurements on different fiber candidates. While all fibers had a diameter of 1.6mm, different surface treatments and approaches to attach the heads were analyzed. Our measurements show that fibers fulfilling the basic KAGRA heat conductivity requirement of $\\kappa\\geq\\,$5000 W/m/K at 20K are technologically feasible.

  5. Design and construction of a tunable pulsed Ti:sapphire laser

    Science.gov (United States)

    Panahi, Omid; Nazeri, Majid; Tavassoli, Seyed Hassan

    2015-02-01

    In this paper, design and constr uction of a tunable pulsed Ti:sapphire laser and numerical solution of the corresponding rate equations are reported. Rate equations for a four-level system are written and their numerical solution is examined. Furthermore, an optical setup is introduced. In this setup, a Ti:sapphire crystal is longitudinally pumped by the second harmonics of a Q-Switched Nd:YAG laser, and a prism is used as a wavelength-selective element as well. This setup is established for two 10 and 50 % transmission output couplers. In case of using the 10 % coupler, the output energy of the laser, for the pump energy of 36 mJ, is pulses with 3.5 mJ energy and for the 50 % coupler, with 50 mJ of pump energy, pulses with 10 mJ energy are generated. A wavelength tuning range of more than 160 nm is possible. The repetition rate of this laser is 10 Hz and the temporal duration of the pulses is about 30 ns.

  6. A scalable pathway to nanostructured sapphire optical fiber for evanescent-field sensing and beyond

    Science.gov (United States)

    Chen, Hui; Tian, Fei; Kanka, Jiri; Du, Henry

    2015-03-01

    We here report an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an all-alumina nanostructured sapphire optical fiber (NSOF). The strategy entails fiber coating with metal aluminum followed by anodization to form alumina cladding of highly organized pore channel structure. Through experiments and numerical simulation, we demonstrate the utility and benefit of NSOF, analogous to all-silica microstructured optical fiber, for evanescent-field surface-enhanced Raman scattering (SERS) measurements. We experimentally reveal the feasibility of Ag nanoparticles (NPs)-enabled NSOF SERS sensing of 10-6 M Rhodamine 6G (R6G) after thermal treatment at 500 °C for 6 h by taking advantage of porous anodic aluminum oxide (AAO) structure to stabilize the Ag NPs. We show, via numerical simulations, that AAO cladding significantly increases the evanescent-field overlap, lower porosity of AAO results in higher evanescent-field overlap, and optimized AAO nanostructure yields greater SERS enhancement.

  7. Tunable integrated optical filters based on sapphire microspheres and liquid crystals

    Science.gov (United States)

    Gilardi, Giovanni; Yilmaz, Hasan; Sharif Murib, Mohammed; Asquini, Rita; d'Alessandro, Antonio; Serpengüzel, Ali; Beccherelli, Romeo

    2010-05-01

    We present an integrated optical narrowband electrically tunable filter based on the whispering gallery modes of sapphire microspheres and double ion-exchanged channel BK7 glass waveguides. Tuning is provided by a liquid crystal infiltrated between the spheres and the glass substrate. By suitably choosing the radii of the spheres and of the circular apertures, upon which the spheres are positioned, arrays of different filters can be realized on the same substrate with a low cost industrial process. We evaluate the performance in terms of quality factor, mode spacing, and tuning range by comparing the numerical results obtained by the numerical finite element modeling approach and with the analytical approach of the Generalized Lorenz-Mie Theory for various design parameters. By reorienting the LC in an external electrical field, we demonstrate the tuning of the spectral response of the sapphire microsphere based filter. We find that the value of the mode spacing remains nearly unchanged for the different values of the applied electric field. An increase of the applied electric field strength, changes the refractive index of the liquid crystal, so that for a fixed geometry the mode spacing remains unchanged.

  8. The Structure of Sapphire Implanted with Carbon at Room Temperature and 1000° C

    Science.gov (United States)

    Alves, E.; Marques, C.; Safran, G.; McHargue, Carl J.

    2009-03-01

    Carbon was implanted into sapphire at various temperatures as part of a study of the different defect structures produced by a series of light ions. Implantations were made with 150 keV ions to fluences of 1×1016 and 1×1017ions/cm2 at room temperature (RT) and 1000° C. The defect structures were characterized using Rutherford backscattering-channeling (RBS-C) and transmission electron microscopy (TEM). The RBS-C spectra indicated low residual disorder for RT implantation at 1×1016 C+/cm2. The de-channeling approached the random value at 1×1017 C+/cm2 and the TEM examination revealed a buried amorphous layer containing embedded sapphire nanocrystals. Damaged layers containing planar defects generally aligned parallel to the surface surrounded this layer. The RBS-C spectra for the sample implanted at 1000° C with 1×1017C+/cm2 suggested a highly damaged but crystalline surface that was confirmed by TEM micrographs.

  9. Gold wetting effects on sapphire irradiated with GeV uranium ions

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, S.M.M. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Canut, B. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Fornazero, J. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Thevenard, P. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Toulemonde, M. [Centre Interdisciplinaire de Recherche avec les Ions Lourds (CIRIL), Boulevard A. Becquerel, 14040 Caen Cedex (France)

    1997-02-01

    Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated with {sup 238}U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of {approx}80 K, with fluences ranging from 1.2 x 10{sup 12} to 2.5 x 10{sup 12} ions cm{sup -2}. After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.).

  10. Atomic fountain clock with very high frequency stability employing a pulse-tube-cryocooled sapphire oscillator.

    Science.gov (United States)

    Takamizawa, Akifumi; Yanagimachi, Shinya; Tanabe, Takehiko; Hagimoto, Ken; Hirano, Iku; Watabe, Ken-ichi; Ikegami, Takeshi; Hartnett, John G

    2014-09-01

    The frequency stability of an atomic fountain clock was significantly improved by employing an ultra-stable local oscillator and increasing the number of atoms detected after the Ramsey interrogation, resulting in a measured Allan deviation of 8.3 × 10(-14)τ(-1/2)). A cryogenic sapphire oscillator using an ultra-low-vibration pulse-tube cryocooler and cryostat, without the need for refilling with liquid helium, was applied as a local oscillator and a frequency reference. High atom number was achieved by the high power of the cooling laser beams and optical pumping to the Zeeman sublevel m(F) = 0 employed for a frequency measurement, although vapor-loaded optical molasses with the simple (001) configuration was used for the atomic fountain clock. The resulting stability is not limited by the Dick effect as it is when a BVA quartz oscillator is used as the local oscillator. The stability reached the quantum projection noise limit to within 11%. Using a combination of a cryocooled sapphire oscillator and techniques to enhance the atom number, the frequency stability of any atomic fountain clock, already established as primary frequency standard, may be improved without opening its vacuum chamber.

  11. Ultra stable and very low noise signal source using a cryocooled sapphire oscillator for VLBI

    CERN Document Server

    Nand, Nitin R; Ivanov, Eugene N; Santarelli, Giorgio

    2011-01-01

    Here we present the design and implementation of a novel frequency synthesizer based on low phase noise digital dividers and a direct digital synthesizer. The synthesis produces two low noise accurate and tunable signals at 10 MHz and 100 MHz. We report on the measured residual phase noise and frequency stability of the synthesizer, and estimate the total frequency stability, which can be expected from the synthesizer seeded with a signal near 11.2 GHz from an ultra-stable cryocooled sapphire oscillator. The synthesizer residual single sideband phase noise, at 1 Hz offset, on 10 MHz and 100 MHz signals, respectively, were measured to be -135 dBc/Hz and -130 dBc/Hz. Their intrinsic frequency stability contributions, on the 10 MHz and 100 MHz signals, respectively, were measured as sigma_y = 9 x 10^-15 and sigma_y = 2.2 x 10^-15, at 1 s integration time. The Allan Deviation of the total fractional frequency noise on the 10 MHz and 100 MHz signals derived from the synthesizer with the cryocooled sapphire oscilla...

  12. DC-powered Fe3+:sapphire Maser and its Sensitivity to Ultraviolet Light

    CERN Document Server

    Oxborrow, Mark; Kersalé, Yann; Giordano, Vincent

    2010-01-01

    The zero-field Fe3+:sapphire whispering-gallery-mode maser oscillator exhibits several alluring features: Its output is many orders of magnitude brighter than that of an active hydrogen maser and thus far less degraded by spontaneous-emission (Schawlow-Townes) and/or receiving-amplifier noise. Its oscillator loop is confined to a piece of mono-crystalline rock bolted into a metal can. Its quiet amplification combined with high resonator Q provide the ingredients for exceptionally low phase noise. We here concentrate on novelties addressing the fundamental conundrums and technical challenges that impede progress. (1) Roasting: The "mase-ability" of sapphire depends significantly on the chemical conditions under which it is grown and heat-treated. We provide some fresh details and nuances here. (2) Simplification: This paper obviates the need for a Ka-band synthesizer: it describes how a 31.3 GHz loop oscillator, operating on the preferred WG pump mode, incorporating Pound locking, was built from low-cost compo...

  13. Materials processing by use of a Ti:Sapphire laser with automatically-adjustable pulse duration

    Science.gov (United States)

    Kamata, M.; Imahoko, T.; Ozono, K.; Obara, M.

    We have developed an automatic pulsewidth-adjustable femtosecond Ti:Sapphire laser system that can generate an output of 50 fs-1 ps in duration, and sub-mJ/pulse at a repetition rate of 1 kpps. The automatic pulse compressor enables one to control the pulsewidth in the range of 50 fs-1 ps by use of a personal computer (PC). The compressor can change the distance in-between and the tilt angle of the grating pairs by use of two stepping motors and two piezo-electric transducer(PZT) driven actuators, respectively. Both are controlled by a PC. Therefore, not only control of the pulsewidth, but also of the optical chirp becomes easy. By use of this femtosecond laser system, we fabricated a waveguide in fused quartz. The numerical aperture is chosen to 0.007 to loosely focus the femtosecond laser. The fabricated waveguides are well controllable by the incident laser pulsewidth. We also demonstrated the ablation processing of hydroxyapatite (Ca10(PO4)6(OH)2), which is a key component of human tooth and human bone for orthopedics and dentistry. With pulsewidth tunable output from 50 fs through 2 ps at 1 kpps, the chemical content of calcium and phosphorus is kept unchanged before and after 50-fs-2-ps laser ablation. We also demonstrated the precise ablation processing of human tooth enamel with 2 ps Ti:Sapphire laser.

  14. Comparative pathogenicity of four strains of Aleutian disease virus for pastel and sapphire mink.

    Science.gov (United States)

    Hadlow, W J; Race, R E; Kennedy, R C

    1983-09-01

    Information was sought on the comparative pathogenicity of four North American strains (isolates) of Aleutian disease virus for royal pastel (a non-Aleutian genotype) and sapphire (an Aleutian genotype) mink. The four strains (Utah-1, Ontario [Canada], Montana, and Pullman [Washington]), all of mink origin, were inoculated intraperitoneally and intranasally in serial 10-fold dilutions. As indicated by the appearance of specific antibody (counterimmunoelectrophoresis test), all strains readily infected both color phases of mink, and all strains were equally pathogenic for sapphire mink. Not all strains, however, regularly caused Aleutian disease in pastel mink. Infection of pastel mink with the Utah-1 strain invariably led to fatal disease. Infection with the Ontario strain caused fatal disease nearly as often. The Pullman strain, by contrast, almost never caused disease in infected pastel mink. The pathogenicity of the Montana strain for this color phase was between these extremes. These findings emphasize the need to distinguish between infection and disease when mink are exposed to Aleutian disease virus. The distinction has important implications for understanding the natural history of Aleutian disease virus infection in ranch mink.

  15. Characteristics and kinetics of laser-pumped Ti:Sapphire oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Eggleston, J.M.; De Shazer, L.G.; Kangas, K.W.

    1988-06-01

    The experimental performance of a gain-switched Ti:Sapphire laser oscillator pumped by a frequency-doubled Q-switched Nd:YAG laser system is presented for a variety of operating conditions. A theoretical model developed for this oscillator predicts well its performance. In particular, the observed curved input-output energy plots for the oscillator result from the kinetics of gain switching and fluorescence decay during the gain buildup period. Fluorescence decay also produces observed oscillator thresholds higher than those normally predicted by the standard gain-equals-loss condition. Gain-switched parasitic modes, with a higher threshold but shorter roundtrip time than the resonator mode, cause the resonator mode to oscillate only over a finite range of pump energies. Also, spectroscopic investigations show that the Ti:Sapphire cross-section spectrum is well fit by a Poisson distribution, giving a peak cross section of 3 x 10/sup -19/ cm/sup 2/ for the ..pi.. polarization.

  16. A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

    Science.gov (United States)

    Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Suria, Ateeq J.; Chapin, Caitlin A.; Senesky, Debbie G.

    2016-09-01

    A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

  17. Tunable Single-Frequency Intracavity Frequency-Doubled Ti:Sapphire Laser around 461 nm

    Institute of Scientific and Technical Information of China (English)

    李凤琴; 石柱; 李永民; 彭堃墀

    2011-01-01

    We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser.The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours.The frequency stability is better than ±2.22 MHz over 10min when the laser is locked to a confocal Fabry-Perot cavity.A three-plate birefringent filter allows for the tunable range from 457nm to 467nm,which covers the absorption line of the strontium atoms(460.86nm).%We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser. The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours. The frequency stability is better than ±2.22MHz over lOmin when the laser is locked to a confocal Fabry-Perot cavity. A three-plate birefringent filter allows for the tunable range from 457nm to 467 nm, which covers the absorption line of the strontium atoms (460.86 nm).

  18. The Prescribed Velocity Method

    DEFF Research Database (Denmark)

    Nielsen, Peter Vilhelm

    The- velocity level in a room ventilated by jet ventilation is strongly influenced by the supply conditions. The momentum flow in the supply jets controls the air movement in the room and, therefore, it is very important that the inlet conditions and the numerical method can generate a satisfactory...... description of this momentum flow. The Prescribed Velocity Method is a practical method for the description of an Air Terminal Device which will save grid points close to the opening and ensure the right level of the momentum flow....

  19. Cirrus Crystal Terminal Velocities.

    Science.gov (United States)

    Heymsfield, Andrew J.; Iaquinta, Jean

    2000-04-01

    Cirrus crystal terminal velocities are of primary importance in determining the rate of transport of condensate from upper- to middle-tropospheric levels and profoundly influence the earth's radiation balance through their effect on the rate of buildup or decay of cirrus clouds. In this study, laboratory and field-based cirrus crystal drag coefficient data, as well as analytical descriptions of cirrus crystal shapes, are used to derive more physically based expressions for the velocities of cirrus crystals than have been available in the past.Polycrystals-often bullet rosettes-are shown to be the dominant crystal types in synoptically generated cirrus, with columns present in varying but relatively large percentages, depending on the cloud. The two critical parameters needed to calculate terminal velocity are the drag coefficient and the ratio of mass to cross-sectional area normal to their fall direction. Using measurements and calculations, it is shown that drag coefficients from theory and laboratory studies are applicable to crystals of the types found in cirrus. The ratio of the mass to area, which is shown to be relatively independent of the number of bullets in the rosette, is derived from an analytic model that represents bullet rosettes containing one to eight bullets in 19 primary geometric configurations. The ratio is also derived for columns. Using this information, a general set of equations is developed to calculate the terminal velocities and masses in terms of the aspect ratio (width divided by length), ice density, and rosette maximum dimension. Simple expressions for terminal velocity and mass as a function of bullet rosette maximum dimension are developed by incorporating new information on bullet aspect ratios.The general terminal velocity and mass relations are then applied to a case from the First International Satellite Cloud Climatology Project (ISCCP) Research Experiment (FIRE) 2, when size spectra from a balloon-borne ice crystal

  20. Interfaces habladas

    Directory of Open Access Journals (Sweden)

    María Teresa Soto Sanfiel

    2012-04-01

    Full Text Available Este artículo describe y piensa al fenómeno de las Interfaces habladas (IH desde variados puntos de vista y niveles de análisis. El texto se ha concebido con los objetivos específicos de: 1.- procurar una visión panorámica de aspectos de la producción y consumo comunicativo de las IH; 2.- ofrecer recomendaciones para su creación y uso eficaz, y 3.- llamar la atención sobre su proliferación e inspirar su estudio desde la comunicación. A pesar de la creciente presencia de las IF en nues-tras vidas cotidianas, hay ausencia de textos que las caractericen y analicen por sus aspectos comunicativos. El trabajo es pertinente porque el fenómeno significa un cambio respecto a estadios comunica-tivos precedentes con consecuencias en las concepciones intelectuales y emocionales de los usuarios. La proliferación de IH nos abre a nue-vas realidades comunicativas: hablamos con máquinas.

  1. Modeling Terminal Velocity

    Science.gov (United States)

    Brand, Neal; Quintanilla, John A.

    2013-01-01

    Using a simultaneously falling softball as a stopwatch, the terminal velocity of a whiffle ball can be obtained to surprisingly high accuracy with only common household equipment. This classroom activity engages students in an apparently daunting task that nevertheless is tractable, using a simple model and mathematical techniques at their…

  2. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    Directory of Open Access Journals (Sweden)

    Mihir Kumar Mahata

    2014-11-01

    Full Text Available In this work, cluster tool (CT Plasma Assisted Molecular Beam Epitaxy (PA-MBE grown AlGaN/GaN heterostructure on c-plane (0 0 0 1 sapphire (Al2O3 were investigated by High Resolution X-ray Diffraction (HRXRD, Room Temperature Raman Spectroscopy (RTRS, and Room Temperature Photoluminescence (RTPL. The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’ and in-plane (‘a’ lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM from HRXRD scan of (002 and (105 plane. The in-plane (out-of plane strain of the samples were found to be −2.5 × 10−3(1 × 10−3, and −1.7 × 10−3(2 × 10−3 in GaN layer and 5.1 × 10−3 (−3.3 × 10−3, and 8.8 × 10−3(−1.3 × 10−3 in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory and experimental observations of the RTPL spectrum.

  3. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    Energy Technology Data Exchange (ETDEWEB)

    Mahata, Mihir Kumar; Ghosh, Saptarsi; Jana, Sanjay Kumar; Bag, Ankush; Kumar, Rahul [Advanced Technology Development Center, Indian Institute of Technology, Kharagpur, 721302 (India); Chakraborty, Apurba; Biswas, Dhrubes [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, 721302 (India); Mukhopadhyay, Partha [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur, 721302 (India)

    2014-11-15

    In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al{sub 2}O{sub 3}) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10{sup −3}(1 × 10{sup −3}), and −1.7 × 10{sup −3}(2 × 10{sup −3}) in GaN layer and 5.1 × 10{sup −3} (−3.3 × 10{sup −3}), and 8.8 × 10{sup −3}(−1.3 × 10{sup −3}) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.

  4. Atomistic studies of grain boundaries and heterophase interfaces in alloys and compounds. Final report, July 1987-August 1998

    Energy Technology Data Exchange (ETDEWEB)

    Vitek, Vaclav

    1998-08-01

    The overarching goal of the research supported by this grant was investigation of the structure and properties of interfaces in multicomponent systems by atomistic modeling. Initially, the research was devoted to studies of segregation to grain boundaries in binary disordered alloys. The next step was then studies of the structure and properties of grain boundaries in ordered compounds, specifically Ni3Al and NiAl, and grain boundary segregation in these compounds in the case of off-stoichiometry. Finally, the structure of Nb/sapphire interfaces, in particular the core configurations of the misfit dislocations, was studied.

  5. Hypervelocity Impact on Interfaces: A Molecular-Dynamics Simulations Study

    Science.gov (United States)

    Bachlechner, Martina E.; Owens, Eli T.; Leonard, Robert H.; Cockburn, Bronwyn C.

    2008-03-01

    Silicon/silicon nitride interfaces are found in micro electronics and solar cells. In either application the mechanical integrity of the interface is of great importance. Molecular-dynamics simulations are performed to study the failure of interface materials under the influence of hypervelocity impact. Silicon nitride plates impacting on silicon/silicon nitride interface targets of different thicknesses result in structural phase transformation and delamination at the interface. Detailed analyses of atomic velocities, bond lengths, and bond angles are used to qualitatively examine the respective failure mechanisms.

  6. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  7. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-04-01

    This report summarizes technical progress over the first six months of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on analyzing and testing factors that impact performance degradation of the initially designed sensor prototype, including sensing element movement within the sensing probe and optical signal quality degradation. Based these results, a new version of the sensing system was designed by combining the sapphire disk sensing element and the single crystal zirconia right angle light reflector into one novel single crystal sapphire right angle prism. The new sensor prototype was tested up to 1650 C.

  8. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    Science.gov (United States)

    Sun, Haiding; Wu, Feng; tahtamouni, T. M. Al; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-10-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0 0 0 1) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  9. A sapphire tube atomizer for on-line atomization and in situ collection of bismuthine for atomic absorption spectrometry

    OpenAIRE

    Musil, S. (Stanislav); Dědina, J. (Jiří)

    2013-01-01

    Sapphire was tested as a new material for volatile species atomizers and bismuthine was chosen as a convenient model for volatile species. Its performance was compared with a quartz atomizer in both modes of operation - on-line atomization versus in situ collection.

  10. The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

    Science.gov (United States)

    Huang, Jen-Ching; Weng, Yung-Jin

    2014-01-01

    This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model.

  11. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  12. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  13. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  14. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, M.; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  15. Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; Eason, R.W.; Laversenne, L.; Moretti, P.; Borca, C.N.; Pollnau, M.

    2006-01-01

    Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near 780 nm was demonstrated at room temperature at an absorbed pump power t

  16. Ti:sapphire rib waveguides as single-transverse-mode broadband fluorescence sources for optical coherence tomography applications

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Ar+-beam-milled rib waveguides in pulsed-laser-deposited Ti:sapphire layers show broadband single transverse mode fluorescence emission at output powers up to 300 μW and propagation losses comparable to those in unstructured planar waveguide counterparts.

  17. Wave propagation and group velocity

    CERN Document Server

    Brillouin, Léon

    1960-01-01

    Wave Propagation and Group Velocity contains papers on group velocity which were published during the First World War and are missing in many libraries. It introduces three different definitions of velocities: the group velocity of Lord Rayleigh, the signal velocity of Sommerfeld, and the velocity of energy transfer, which yields the rate of energy flow through a continuous wave and is strongly related to the characteristic impedance. These three velocities are identical for nonabsorbing media, but they differ considerably in an absorption band. Some examples are discussed in the last chapter

  18. Automatic gesture analysis using constant affine velocity.

    Science.gov (United States)

    Cifuentes, Jenny; Boulanger, Pierre; Pham, Minh Tu; Moreau, Richard; Prieto, Flavio

    2014-01-01

    Hand human gesture recognition has been an important research topic widely studied around the world, as this field offers the ability to identify, recognize, and analyze human gestures in order to control devices or to interact with computer interfaces. In particular, in medical training, this approach is an important tool that can be used to obtain an objective evaluation of a procedure performance. In this paper, some obstetrical gestures, acquired by a forceps, were studied with the hypothesis that, as the scribbling and drawing movements, they obey the one-sixth power law, an empirical relationship which connects path curvature, torsion, and euclidean velocity. Our results show that obstetrical gestures have a constant affine velocity, which is different for each type of gesture and based on this idea this quantity is proposed as an appropriate classification feature in the hand human gesture recognition field.

  19. Electrical and optical properties of VO2 thin films grown on various sapphire substrates by using RF sputtering deposition

    Science.gov (United States)

    Jung, Dae Ho; So, Hyeon Seob; Ko, Kun Hee; Park, Jun Woo; Lee, Hosun; Nguyen, Trang Thi Thu; Yoon, Seokhyun

    2016-12-01

    VO2 thin films were grown on a-, c-, m-, and r-plane sapphire and SiO2/Si substrates under identical conditions by using RF sputtering deposition from a VO2 target. The structural and the morphological properties of all VO2 films were investigated. The grain sizes of the VO2 films varied between 268 nm and 355 nm depending on the substrate's orientation. The electrical and the optical properties of all VO2 thin films were examined in detail. The metal-insulator transition temperature (TMI) varied with the substrate's orientation. The (200)/(bar 211 )-oriented VO2 films on the a-plane sapphire showed the lowest TMI of about 329.3 K (56.3 °C) while the (020)/(002)-VO2 films on the c-plane sapphire displayed the highest TMI of about 339.6 K (66.6 °C). The VO2 films showed reversible changes in the resistivity as large as 1.19 × 105 and a hysteresis of 2 K upon traversing the transition temperature. The variations observed in the TMI with respect to the substrate's orientation were due to changes in the lattice strain and the grain size distribution. Raman spectroscopy showed that metal (rutile) - insulator (monoclinic) transitions occurred via the M2 phase for VO2 films on the c-plane substrate rather than the direct M1 to rutile transition. The shifts in the phonon frequencies of the VO2 film grown on various sapphire substrates were explained in terms of the strain along the V-V atomic bond direction (cR). Our work shows a possible correlation between the transition parameters ( e.g., TMI, sharpness, and hysteresis width) and the width ( σ) of the grain size distribution. It also shows a possible correlation between the TMI and the resistivities at the insulating and the metallic phases for VO2 films grown on various sapphire substrates.

  20. 蓝宝石晶体的双面研磨加工%Dual-lapping process for sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    文东辉; 洪滔; 张克华; 鲁聪达

    2009-01-01

    In order to achieve high efficiency and low damaged layers during a sapphire crystal lapping process,an experimental research on the rougness,lapping uniformity and sub-surface damaged layer were studied in this paper.The sapphire with (0001) orientation was lapped by 280 mesh boron carbide abrasive grits.The effects of lapping time on the material removal rates and surface roughness were investigated,and the processing remainders by the dual-lapping were determined in accordance with the surface states of the sapphire.Then micro-surface uniformity of the sapphire was also presented by using WYKO laser equipment.Finally,a nano-indentation test was carried out to measure the depth of damaged layer according to the hardness or modulus variances.Experimental results show that the sapphire crystal can offer the R,in 0.523 μm,R,<6.0 μm,the depth of heavy damaged layer of 460 nm,and the depth of sub-surface damaged layer no more than 1 μm,after it is lapped by the abrasive with 280 mesh boron carbide grits in 120 min.%为了实现对蓝宝石晶体的高效低损伤研磨加工,对蓝宝石晶体的双面研磨加工表面粗糙度、研磨均匀性和亚表面损伤层的深度进行实验研究.采用280min的双面研磨加工后可以获得Ra为0.523 μm,Rt<6.0 μm的表面;其深度损伤层约为460 nm,亚表面损伤层<1 μm.

  1. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    Science.gov (United States)

    Karacheban, O.; Afanaciev, K.; Hempel, M.; Henschel, H.; Lange, W.; Leonard, J. L.; Levy, I.; Lohmann, W.; Schuwalow, S.

    2015-08-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitors at the Large Hadron Collider, FLASH or XFEL. Currently artificial diamond sensors are widely used. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm2 size and 525 μ m thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the detector was studied in a 5 GeV electron beam. The charge collection efficiency measured as a function of the bias voltage rises with the voltage, reaching about 10% at 095 V. The signal size obtained from electrons crossing the stack at this voltage is about 02200 e, where e is the unit charge. The signal size is measured as a function of the hit position, showing variations of up to 20% in the direction perpendicular to the beam and to the electric field. The measurement of the signal size as a function of the coordinate parallel to the electric field confirms the prediction that mainly electrons contribute to the signal. Also evidence for the presence of a polarisation field was observed.

  2. Preparation of Ce-doped colloidal SiO{sub 2} composite abrasives and their chemical mechanical polishing behavior on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Hong, E-mail: hong_lei2005@aliyun.com [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China); Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444 (China); Tong, Kaiyu; Wang, Zhanyong [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China)

    2016-04-01

    Chemical mechanical polishing (CMP) has become a widely accepted global planarization technology. Abrasive is one of key elements during CMP process. In order to enhance removal rate and improve surface quality of sapphire substrate, a series of novel Ce-doped colloidal SiO{sub 2} composite abrasives were prepared by chemical co-precipitation method. The CMP performances of the Ce-doped colloidal SiO{sub 2} composite abrasives on sapphire substrate were investigated by using UNIPOL-1502 polishing equipment. The analyses on the surface of polished sapphire substrate indicate that slurries containing the Ce-doped colloidal SiO{sub 2} composite abrasives exhibit lower surface roughness, higher material removal rate than that of pure colloidal SiO{sub 2} abrasive under the same testing conditions. Furthermore, the acting mechanism of the Ce-doped colloidal silica in sapphire CMP was investigated. X-ray photoelectron spectroscopy analysis shows that solid-state chemical reactions between Ce-doped silica abrasives and sapphire surface occur during CMP process, which can promote the chemical effect in CMP and lead to the improvement of material removing rate. - Highlights: • Novel Ce-doped colloidal SiO{sub 2} composite abrasives were prepared. • The chemical mechanical polishing (CMP) performances of the composite abrasives on sapphire substrate were investigated. • Novel composite abrasives show excellent polishing characteristics comparison with pure colloidal SiO{sub 2} abrasive. • We explore and report the acting mechanism of composite abrasives to sapphire CMP.

  3. Radial Velocities with PARAS

    Science.gov (United States)

    Roy, Arpita; Mahadevan, S.; Chakraborty, A.; Pathan, F. M.; Anandarao, B. G.

    2010-01-01

    The Physical Research Laboratory Advanced Radial-velocity All-sky Search (PARAS) is an efficient fiber-fed cross-dispersed high-resolution echelle spectrograph that will see first light in early 2010. This instrument is being built at the Physical Research laboratory (PRL) and will be attached to the 1.2m telescope at Gurushikhar Observatory at Mt. Abu, India. PARAS has a single-shot wavelength coverage of 370nm to 850nm at a spectral resolution of R 70000 and will be housed in a vacuum chamber (at 1x10-2 mbar pressure) in a highly temperature controlled environment. This renders the spectrograph extremely suitable for exoplanet searches with high velocity precision using the simultaneous Thorium-Argon wavelength calibration method. We are in the process of developing an automated data analysis pipeline for echelle data reduction and precise radial velocity extraction based on the REDUCE package of Piskunov & Valenti (2002), which is especially careful in dealing with CCD defects, extraneous noise, and cosmic ray spikes. Here we discuss the current status of the PARAS project and details and tests of the data analysis procedure, as well as results from ongoing PARAS commissioning activities.

  4. A Peltier cooled single pass amplifier for Titanium:Sapphire laser pulses

    Science.gov (United States)

    Ozawa, A.; Schneider, W.; Najafi, F.; Hänsch, T. W.; Udem, Th.; Hommelhoff, P.

    2010-05-01

    We report on a Peltier cooled single pass amplifier for high repetition rate Titanium:sapphire laser pulses. Pumped with 14 W and seeded with around 400 mW, the output reaches 1.1 W with good beam quality. This amplifier is very user-friendly, easy to maintain and set up and thus represents a device situated between more complicated liquid-nitrogen cooled amplifiers that can operate at higher pump power, and very simple near to room temperature amplifiers that can only be pumped with less power. In addition, we show the results of a finite element simulation on the temperature distribution in a liquid nitrogen cooled amplifier setup designed for highest output powers.

  5. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  6. Nonlinear Phase Distortion in a Ti:Sapphire Optical Amplifier for Optical Stochastic Cooling

    Energy Technology Data Exchange (ETDEWEB)

    Andorf, Matthew [NICADD, DeKalb; Lebedev, Valeri [Fermilab; Piot, Philippe [NICADD, DeKalb; Ruan, Jinhao [Fermilab

    2016-06-01

    Optical Stochastic Cooling (OSC) has been considered for future high-luminosity colliders as it offers much faster cooling time in comparison to the micro-wave stochastic cooling. The OSC technique relies on collecting and amplifying a broadband optical signal from a pickup undulator and feeding the amplified signal back to the beam. It creates a corrective kick in a kicker undulator. Owing to its superb gain qualities and broadband amplification features, Titanium:Sapphire medium has been considered as a gain medium for the optical amplifier (OA) needed in the OSC*. A limiting factor for any OA used in OSC is the possibility of nonlinear phase distortions. In this paper we experimentally measure phase distortions by inserting a single-pass OA into one leg of a Mach-Zehnder interferometer. The measurement results are used to estimate the reduction of the corrective kick a particle would receive due to these phase distortions in the kicker undulator.

  7. The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

    Science.gov (United States)

    Alexeev, P.; Asadchikov, V.; Bessas, D.; Butashin, A.; Deryabin, A.; Dill, F.-U.; Ehnes, A.; Herlitschke, M.; Hermann, R. P.; Jafari, A.; Prokhorov, I.; Roshchin, B.; Röhlsberger, R.; Schlage, K.; Sergueev, I.; Siemens, A.; Wille, H.-C.

    2016-12-01

    We report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on Mössbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with 119Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. The device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like 151Eu, 149Sm, 161Dy, 125Te and 121Sb.

  8. Nanostructured sapphire vicinal surfaces as templates for the growth of self-organized oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Thune, E., E-mail: elsa.thune@unilim.fr [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Boulle, A. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Babonneau, D.; Pailloux, F. [Laboratoire de Physique des Materiaux (PHYMAT), UMR CNRS 6630, Universite de Poitiers, Boulevard Marie et Pierre Curie - Teleport 2, BP 30179, F-86962 Futuroscope - Chasseneuil Cedex (France); Hamd, W.; Guinebretiere, R. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France)

    2009-11-15

    Vicinal substrates of sapphire with miscut angle of 10 deg. from the (0 0 1) planes towards the [1 1 0] direction have been annealed in air in the range from 1000 to 1500 deg. C. The behaviour of these surfaces has been characterized as a function of the temperature and the thermal treatment time by Atomic Force Microscopy observations. A thermal treatment at 1250 deg. C allows to stabilize a surface made of periodically spaced nanosized step-bunches. Such stepped surfaces were used as template to grow self-patterned epitaxial oxide nanoparticles by thermal annealing of yttria-stabilized zirconia thin films produced by sol-gel dip-coating. Grazing Incidence Small Angle X-ray Scattering and High-Resolution Transmission Electron Microscopy were used to study the morphology of the nanoparticles and their epitaxial relationships with the substrate.

  9. Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

    Science.gov (United States)

    Yadav, Amit; Kbashi, Hani; Kolpakov, Stanislav; Gordon, Neil; Zhou, Kaiming; Rafailov, Edik U.

    2017-05-01

    The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green-violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as "stealth dicing". The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

  10. Cryogenic Sapphire Oscillator using a low-vibration design pulse-tube cryocooler: First results

    CERN Document Server

    Hartnett, John G; Wang, Chao; Floch, Jean-Michel Le

    2010-01-01

    A Cryogenic Sapphire Oscillator has been implemented at 11.2 GHz using a low-vibration design pulse-tube cryocooler. Compared with a state-of-the-art liquid helium cooled CSO in the same laboratory, the square root Allan variance of their combined fractional frequency instability is $\\sigma_y = 1.4 \\times 10^{-15}\\tau^{-1/2}$ for integration times $1 < \\tau < 10$ s, dominated by white frequency noise. The minimum $\\sigma_y = 5.3 \\times 10^{-16}$ for the two oscillators was reached at $\\tau = 20$ s. Assuming equal contributions from both CSOs, the single oscillator phase noise $S_{\\phi} \\approx -96 \\; dB \\; rad^2/Hz$ at 1 Hz offset from the carrier.

  11. Cryogenic sapphire oscillator using a low-vibration design pulse-tube cryocooler: first results.

    Science.gov (United States)

    Hartnett, John; Nand, Nitin; Wang, Chao; Floch, Jean-Michel

    2010-05-01

    A cryogenic sapphire oscillator (CSO) has been implemented at 11.2 GHz using a low-vibration design pulsetube cryocooler. Compared with a state-of-the-art liquid helium cooled CSO in the same laboratory, the square root Allan variance of their combined fractional frequency instability is sigma(y) = 1.4 x 10(-15)tau(-1/2) for integration times 1 < tau < 10 s, dominated by white frequency noise. The minimum sigmay = 5.3 x 10(-16) for the two oscillators was reached at tau = 20 s. Assuming equal contributions from both CSOs, the single oscillator phase noise S(phi) approximately -96 dB x rad(2)/Hz at 1 Hz set from the carrier.

  12. All-solid-state narrow-linewidth 455-nm blue laser based on Ti: sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    Shankui Rong; Xiaolei Zhu; Weibiao Chen

    2009-01-01

    A compact, all-solid-state, narrow-linewidth, pulsed 455-nm blue laser based on Ti:sapphire crystal is developed. Pumped by a 10-Hz, frequency-doubled all-solid-state Nd:YAG laser and injection-seeded by an external cavity laser diode, the narrow-linewidth 910-nm laser with pulse width of 20 ns is obtained from a Tirsapphire laser. 3.43-mJ blue laser can be obtained from the laser system by frequency-doubling with BBO crystal. This research is very useful to determine the roadmap of developing the practical, high power blue laser. This kind of laser will have potential application for underwater communication.

  13. Containerless laser-induced fluorescence study of vaporization and optical properties for sapphire and alumina

    Energy Technology Data Exchange (ETDEWEB)

    Nordine, P.C.; Schiffman, R.A. (Midwest Research Institute, Kansas City, MO (USA) Yale Univ., New Haven, CT (USA))

    1988-09-01

    Evaporation of aluminum oxide was studied from 1,800 to 2,327 K by laser-induced fluorescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO{sub 2} laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al{sub 2}O{sub 3}. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

  14. Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Xu, S.R., E-mail: shengruixidian@126.com [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Li, P.X. [School of Technical Physics, Xidian University, Xi’an 710071 (China); Zhang, J.C.; Jiang, T. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Ma, J.J. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); School of Technical Physics, Xidian University, Xi’an 710071 (China); Lin, Z.Y.; Hao, Y. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China)

    2014-11-25

    Highlights: • The LED structure on PSS was grown by MOCVD. • The distribution of defects in GaN film grown on PSS was investigated by TEM. • The main mechanism of TDs reducing on PSS was revealed. - Abstract: The microstructure of an epilayer structure for the blue light-emitting diode grown on a cone patterned sapphire substrate was characterized by high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy (TEM). Cross-sectional TEM revealed that most of the dislocations, which originated from planar region, propagated laterally toward the cone region during the lateral growth process. This change of the propagation direction prevented the dislocations from penetrate the epitaxy film and thus principally led to a drastic reduction in the threading dislocation density in GaN films. Particularly, we proposed that the six {11"‾01} semipolar facets play a very important role during the bending process.

  15. Test of Lorentz Invariance in Electrodynamics Using Rotating Cryogenic Sapphire Microwave Oscillators

    CERN Document Server

    Stanwix, P L; Wolf, P; Susli, M; Locke, C R; Ivanov, E N; Winterflood, J; Van Kann, F; Stanwix, Paul L.; Tobar, Michael E.; Wolf, Peter; Susli, Mohamad; Locke, Clayton R.; Ivanov, Eugene N.; Winterflood, John; Kann, Frank van

    2005-01-01

    We present the first results from a rotating Michelson-Morley experiment that uses two orthogonally orientated cryogenic sapphire resonator-oscillators operating in whispering gallery modes near 10 GHz. The experiment is used to test for violations of Lorentz Invariance in the frame-work of the photon sector of the Standard Model Extension (SME), as well as the isotropy term of the Robertson-Mansouri-Sexl (RMS) framework. In the SME we set a new bound on the previously unmeasured kappa_{e-}^{ZZ} component of 2.1(5.7)x10^{-14}, and set more stringent bounds by up to a factor of 7 on seven other components. In the RMS a more stringent bound of -2.6(2.1)x10^{-10} on the isotropy parameter, P_{MM}= delta - beta + 1/2 is set, which is a factor of 7 improvement.

  16. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

    Institute of Scientific and Technical Information of China (English)

    Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

    2012-01-01

    The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail.The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor,resulting in a higher internal quantum efficiency (IQE).Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases.The illumination output power of the LED is affected by both θ and f.It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f.

  17. A 10-Hz Terawatt Class Ti:Sapphire Laser System: Development and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, A.K.; Smedley, J.; Tsang, T.; Rao, T.

    2010-01-12

    We developed a two stage Ti:Sapphire laser system to generate 16 mJ/80fs laser pulses at the pulse repetition rate of 10 Hz. The key deriver for the present design is implementing a highly efficient symmetric confocal pre-amplifier and employing a simple, inexpensive synchronization scheme relying only on a commercial digital delay-generator. We characterized the amplified pulses in spatial-, spectral-, and temporal-domains. The laser system was used to investigate various nonlinear optical processes, and to modify the optical properties of metal- and semiconductor-surfaces. We are currently building a third amplifier to boost the laser power to the multi-terawatt range.

  18. A High Power and High Repetition Rate Modelocked Ti-Sapphire Laser for Photoinjectors

    Energy Technology Data Exchange (ETDEWEB)

    J. Hansknecht; M. Poelker

    2001-07-01

    A high power cw mode-locked Ti-sapphire laser has been constructed to drive the Jefferson Lab polarized photoinjector and provide > 500 mW average power with 50 ps pulsewidths at 499 MHz or 1497 MHz pulse repetition rates. This laser allows efficient, high current synchronous photoinjection for extended periods of time before intrusive steps must be taken to restore the quantum efficiency of the strained layer GaAs photocathode. The use of this laser has greatly enhanced the maximum high polarization beam current capability and operating lifetime of the Jefferson Lab photoinjector compared with previous performance using diode laser systems. A novel modelocking technique provides a simple means to phase-lock the optical pulse train of the laser to the accelerator and allows for operation at higher pulse repetition rates to {approx} 3 GHz without modification of the laser cavity. The laser design and characteristics are described below.

  19. Intra-cavity gain shaping of mode-locked Ti:Sapphire laser oscillations

    CERN Document Server

    Yefet, Shai; Pe'er, Avi

    2015-01-01

    The gain properties of an oscillator strongly affect its behavior. When the gain is homogeneous, different modes compete for gain resources in a `winner takes all' manner, whereas with inhomogeneous gain, modes can coexist if they utilize different gain resources. We demonstrate precise control over the mode competition in a mode locked Ti:sapphire oscillator by manipulation and spectral shaping of the gain properties, thus steering the competition towards a desired, otherwise inaccessible, oscillation. Specifically, by adding a small amount of spectrally shaped inhomogeneous gain to the standard homogeneous gain oscillator, we selectively enhance a desired two-color oscillation, which is inherently unstable to mode competition and could not exist in a purely homogeneous gain oscillator. By tuning the parameters of the additional inhomogeneous gain we flexibly control the center wavelengths, relative intensities and widths of the two colors.

  20. Narrow linewidth operation of the RILIS titanium: Sapphire laser at ISOLDE/CERN

    CERN Document Server

    Rothe, S; Wendt, K D A; Fedosseev, V N; Kron, T; Marsh, B A

    2013-01-01

    A narrow linewidth operating mode for the Ti:sapphire laser of the CERN ISOLDE Resonance Ionization Laser Ion Source (RILIS) has been developed. This satisfies the laser requirements for the programme of in-source resonance ionization spectroscopy measurements and improves the selectivity for isomer separation using RILIS. A linewidth reduction from typically 10 GHz down to 1 GHz was achieved by the intra-cavity insertion of a second (thick) Fabry-Perot etalon. Reliable operation during a laser scan was achieved through motorized control of the tilt angle of each etalon. A scanning, stabilization and mode cleaning procedure was developed and implemented in LabVIEW. The narrow linewidth operation was confirmed in a high resolution spectroscopy study of francium isotopes by the Collinear Resonance Ionization Spectroscopy experiment. The resulting laser scans demonstrate the suitability of the laser, in terms of linewidth, spectral purity and stability for high resolution in-source spectroscopy and isomer select...

  1. Single-crystal Sapphire Based Optical Polarimetric Sensor for High Temperature Measurement

    Directory of Open Access Journals (Sweden)

    Anbo Wang

    2006-08-01

    Full Text Available Optical sensors have been investigated and widely deployed in industrial andscientific measurement and control processes, mainly due to their accuracy, high sensitivityand immunity to electromagnetic interference and other unique characteristics. They areespecially suited for harsh environments applications, where no commercial electricalsensors are available for long-term stable operations. This paper reports a novel contactoptical high temperature sensor targeting at harsh environments. Utilizing birefringentsingle crystal sapphire as the sensing element and white light interferometric signalprocessing techniques, an optical birefringence based temperature sensor was developed.With a simple mechanically structured sensing probe, and an optical spectrum-codedinterferometric signal processor, it has been tested to measure temperature up to 1600 °Cwith high accuracy, high resolution, and long-term measurement stability.

  2. Anomalous Surface Deformation of Sapphire Clarified by 3D-FEM Simulation of the Nanoindentation

    Science.gov (United States)

    Nowak, Roman; Manninen, Timo; Li, Chunliang; Heiskanen, Kari; Hannula, Simo-Pekka; Lindroos, Veikko; Soga, Tetsuo; Yoshida, Fusahito

    This work clarifies the origin of anomalous surface deformation reflected by peculiar surface patterns around indentation impressions on various crystallographic planes of sapphire. The three-dimensional finite element simulation (3D-FEM) of nanoindentation in Al2O3 crystal allowed the authors to localize the regions in which various kinds of twinning and slip are most prone to be activated. The work provides a novel approach to the “hardness anisotropy”, which was modeled so far using a modified uniaxial-stress approximation of this essentially 3D, non-isotropic contact problem. The calculated results enabled the authors to unravel the asymmetric surface deformation detected on prismatic planes by the high-resolution microscopy, which cannot be explained using simple crystallographic considerations.

  3. Cryo-Cooled Sapphire Oscillator for the Cassini Ka-Band Experiment

    Science.gov (United States)

    Wang, Rabi T.; Dick, G. John

    1997-01-01

    We present features for an ultra-stable sapphire cryogenic oscillator which has been designed to support the Cassini Ka-band Radio Science experiment. The design of this standard is new in several respects. It is cooled by a commercial cryocooler instead of liquid cryogens to increase operating time, and it uses a technology to adjust the temperature turn-over point to extend the upper operating temperature limit and to enable construction of multiple units with uniform operating characteristics. Objectives are 3 x 10(exp -15) stability for measuring times 1 second less than or equal to (tau) less than or equal to 100 seconds, phase noise of -85 dBc/Hz from offset frequencies of 1 Hz to 1000 Hz at 10 GHz carrier frequency, and a one year continuous operating period.

  4. Design of a Cryocooled Sapphire Oscillator for the Cassini Ka-Band Experiment

    Science.gov (United States)

    Dick, G. J.; Wang, R. T.

    1998-04-01

    We present design aspects of a cryogenic sapphire oscillator that is being developed for ultra-high short-term stability and low phase noise in support of the Cassini Ka-band (32-GHz) radio science experiment. With cooling provided by a commercial cryocooler instead of liquid helium, this standard is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3 x 10^(-15) (1 second ≤ τ ≤ 100 seconds) and a phase noise of -73 dBc/Hz at 1 Hz measured at 34 GHz. Test results are reported for several subsystems, including the cryocooler, vibration isolation system, and ruby compensating element.

  5. Advances in Trace Element “Fingerprinting” of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    Directory of Open Access Journals (Sweden)

    F. Lin Sutherland

    2014-12-01

    Full Text Available Mogok gem corundum samples from twelve localities were analyzed for trace element signatures (LA-ICP-MS method and oxygen isotope values (δ18O, by laser fluorination. The study augmented earlier findings on Mogok gem suites that suggested the Mogok tract forms a high vanadium gem corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents. Oxygen isotope values (δ18O for the ruby and high Si-Ca-Ga corundum (20‰–25‰ and for sapphire (10‰–20‰ indicate typical crustal values, with values >20‰ being typical of carbonate genesis. The high Si-Ca-Ga ruby has high chromium (up to 3.2 wt % Cr and gallium (up to 0. 08 wt % Ga compared to most Mogok ruby (<2 wt % Cr; <0.02 wt % Ga. In trace element ratio plots the Si-Ca-Ga-rich corundum falls into separate fields from the typical Mogok metamorphic fields. The high Ga/Mg ratios (46–521 lie well within the magmatic range (>6, and with other features suggest a potential skarn-like, carbonate-related genesis with a high degree of magmatic fluid input The overall trace element results widen the range of different signatures identified within Mogok gem corundum suites and indicate complex genesis. The expanded geochemical platform, related to a variety of metamorphic, metasomatic and magmatic sources, now provides a wider base for geographic typing of Mogok gem corundum suites. It allows more detailed comparisons with suites from other deposits and will assist identification of Mogok gem corundum sources used in jewelry.

  6. Two Wavelength Ti:sapphire Laser for Ozone DIAL Measurements from Aircraft

    Science.gov (United States)

    Situ, Wen; DeYoung, Russel J.

    1998-01-01

    Laser remote sensing of ozone from aircraft has proven to be a valuable technique for understanding the distribution and dynamics of ozone in the atmosphere. Presently the differential absorption lidar (DIAL) technique, using dual ND:YAG lasers that are doubled to pump dye lasers which in turn are doubled into the UV for the "on" and "off' line lasers, is used on either the NASA DC-8 or P-3 aircraft. Typically, the laser output for each line is 40-mJ and this is split into two beams, one looking up and the other downward, each beam having about 20-mJ. The residual ND:YAG (1.06 micron) and dye laser energies are also transmitted to obtain information on the atmospheric aerosols. While this system has operated well, there are several system characteristics that make the system less than ideal for aircraft operations. The system, which uses separate "on" and "off" line lasers, is quite large and massive requiring valuable aircraft volume and weight. The dye slowly degrades with time requiring replacement. The laser complexity requires a number of technical people to maintain the system performance. There is also the future interest in deploying an ozone DIAL system in an Unpiloted Atmospheric Vehicle (UAV) which would require a total payload mass of less than 150 kg and power requirement of less than 1500 W. A laser technology has emerged that could potentially provide significant enhancements over the present ozone DIAL system. The flashlamp pumped Ti:sapphire laser system is an emerging technology that could reduce the mass and volume over the present system and also provide a system with fewer conversion steps, reducing system complexity. This paper will discuss preliminary results from a flashlamp-pumped Ti:sapphire laser constructed as a radiation source for a UV DIAL system to measure ozone.

  7. YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

    Science.gov (United States)

    Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

    1996-01-01

    Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

  8. A diffuse interface model with immiscibility preservation

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Arpit, E-mail: atiwari2@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Freund, Jonathan B., E-mail: jbfreund@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Department of Aerospace Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Pantano, Carlos [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)

    2013-11-01

    A new, simple, and computationally efficient interface capturing scheme based on a diffuse interface approach is presented for simulation of compressible multiphase flows. Multi-fluid interfaces are represented using field variables (interface functions) with associated transport equations that are augmented, with respect to an established formulation, to enforce a selected interface thickness. The resulting interface region can be set just thick enough to be resolved by the underlying mesh and numerical method, yet thin enough to provide an efficient model for dynamics of well-resolved scales. A key advance in the present method is that the interface regularization is asymptotically compatible with the thermodynamic mixture laws of the mixture model upon which it is constructed. It incorporates first-order pressure and velocity non-equilibrium effects while preserving interface conditions for equilibrium flows, even within the thin diffused mixture region. We first quantify the improved convergence of this formulation in some widely used one-dimensional configurations, then show that it enables fundamentally better simulations of bubble dynamics. Demonstrations include both a spherical-bubble collapse, which is shown to maintain excellent symmetry despite the Cartesian mesh, and a jetting bubble collapse adjacent a wall. Comparisons show that without the new formulation the jet is suppressed by numerical diffusion leading to qualitatively incorrect results.

  9. Estimating of gas transfer velocity using triple isotopes of dissolved oxygen.

    Digital Repository Service at National Institute of Oceanography (India)

    Sarma, V.V.S.S.; Abe, O.; Honda, M.; Saino, T.

    The atmosphere-ocean exchange of climatically important gases is determined by the transfer velocity (k) and concentration gradient across the interface. Based on observations in the northwestern subarctic Pacific and Sagami Bay, we report here...

  10. The projectile-wall interface in rail launchers

    Science.gov (United States)

    Thio, Y. C.; Huerta, M. A.; Boynton, G. C.; Tidman, D. A.; Wang, S. Y.; Winsor, N. K.

    1993-01-01

    At sufficiently high velocity, an energetic gaseous interface is formed between the projectile and the gun wall. We analyze the flow in this interface in the regime of moderately high velocity. The effect of this gaseous interface is to push the gun wall radially outward and shrink the projectile radially inward. Our studies show that significant plasma blow-by can be expected in most experimental railguns in which organic polymers are used as insulators. Since plasma leakage may result in the reduction of propulsion pressure and possibly induce the separation of the primary, the results point to the importance of having sufficiently stiff barrels and structurally stiff but 'ballistically compliant' projectile designs.

  11. Transverse velocity shifts in protostellar jets: rotation or velocity asymmetries?

    CERN Document Server

    De Colle, Fabio; Riera, Angels

    2016-01-01

    Observations of several protostellar jets show systematic differences in radial velocity transverse to the jet propagation direction, which have been interpreted as evidence of rotation in the jets. In this paper we discuss the origin of these velocity shifts, and show that they could be originated by rotation in the flow, or by side to side asymmetries in the shock velocity, which could be due to asymmetries in the jet ejection velocity/density or in the ambient medium. For typical poloidal jet velocities (~ 100-200 km/s), an asymmetry >~ 10% can produce velocity shifts comparable to those observed. We also present three dimensional numerical simulations of rotating, precessing and asymmetric jets, and show that, even though for a given jet there is a clear degeneracy between these effects, a statistical analysis of jets with different inclination angles can help to distinguish between the alternative origins of transverse velocity shifts. Our analysis indicate that side to side velocities asymmetries could ...

  12. Dark Matter Velocity Spectroscopy.

    Science.gov (United States)

    Speckhard, Eric G; Ng, Kenny C Y; Beacom, John F; Laha, Ranjan

    2016-01-22

    Dark matter decays or annihilations that produce linelike spectra may be smoking-gun signals. However, even such distinctive signatures can be mimicked by astrophysical or instrumental causes. We show that velocity spectroscopy-the measurement of energy shifts induced by relative motion of source and observer-can separate these three causes with minimal theoretical uncertainties. The principal obstacle has been energy resolution, but upcoming experiments will have the precision needed. As an example, we show that the imminent Astro-H mission can use Milky Way observations to separate possible causes of the 3.5-keV line. We discuss other applications.

  13. Minimum Length - Maximum Velocity

    CERN Document Server

    Panes, Boris

    2011-01-01

    We study a framework where the hypothesis of a minimum length in space-time is complemented with the notion of reference frame invariance. It turns out natural to interpret the action of the obtained reference frame transformations in the context of doubly special relativity. As a consequence of this formalism we find interesting connections between the minimum length properties and the modified velocity-energy relation for ultra-relativistic particles. For example we can predict the ratio between the minimum lengths in space and time using the results from OPERA about superluminal neutrinos.

  14. Dark Matter Velocity Spectroscopy

    CERN Document Server

    Speckhard, Eric G; Beacom, John F; Laha, Ranjan

    2016-01-01

    Dark matter decays or annihilations that produce line-like spectra may be smoking-gun signals. However, even such distinctive signatures can be mimicked by astrophysical or instrumental causes. We show that velocity spectroscopy-the measurement of energy shifts induced by relative motion of source and observer-can separate these three causes with minimal theoretical uncertainties. The principal obstacle has been energy resolution, but upcoming and proposed experiments will make significant improvements. As an example, we show that the imminent Astro-H mission can use Milky Way observations to separate possible causes of the 3.5-keV line. We discuss other applications.

  15. Chemical reactions at aqueous interfaces

    Science.gov (United States)

    Vecitis, Chad David

    2009-12-01

    ) Adsorption of dilute PFOS(aq) and PFOA(aq) to acoustically cavitating bubble interfaces was greater than equilibrium expectations due to high-velocity bubble radial oscillations; 2) Relative ozone oxidation kinetics of aqueous iodide, sulfite, and thiosulfate were at variance with previously reported bulk aqueous kinetics; 3) Organics that directly chelated with the anode surface were oxidized by direct electron transfer, resulting in immediate carbon dioxide production but slower overall oxidation kinetics. Chemical reactions at aqueous interfaces can be the rate-limiting step of a reaction network and often display novel mechanisms and kinetics as compared to homogeneous chemistry.

  16. Love Waves in Layered Graded Composite Structures with Imperfectly Bonded Interface

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Theoretical analysis and numerical calculations of Love wave propagation in layered graded composites with imperfectly bonded interface are described in this paper. On the basis of WKB method, the approximate analytic solutions for Love waves are obtained. By the interface shear spring model, the dispersion relations for Love waves in layered graded composite structures with rigid, slip, and imperfectly bonded interfaces are given, and the effects of the interface conditions on the phase velocities of Love waves in SiC/Al layered graded composites are discussed. Numerical analysis shows that the phase velocity decreases when the defined flexibility parameter is greater. For the general imperfectly bonded interface, the phase velocity changes in the range of the velocities for the rigid and slip interface conditions.

  17. PREFACE: Water at interfaces Water at interfaces

    Science.gov (United States)

    Gallo, P.; Rovere, M.

    2010-07-01

    This special issue is devoted to illustrating important aspects and significant results in the field of modeling and simulation of water at interfaces with solutes or with confining substrates, focusing on a range of temperatures from ambient to supercooled. Understanding the behavior of water, in contact with different substrates and/or in solutions, is of pivotal importance for a wide range of applications in physics, chemistry and biochemistry. Simulations of confined and/or interfacial water are also relevant for testing how different its behavior is with respect to bulk water. Simulations and modeling in this field are of particular importance when studying supercooled regions where water shows anomalous properties. These considerations motivated the organization of a workshop at CECAM in the summer of 2009 which aimed to bring together scientists working with computer simulations on the properties of water in various environments with different methodologies. In this special issue, we collected a variety of interesting contributions from some of the speakers of the workshop. We have roughly classified the contributions into four groups. The papers of the first group address the properties of interfacial and confined water upon supercooling in an effort to understand the relation with anomalous behavior of supercooled bulk water. The second group deals with the specific problem of solvation. The next group deals with water in different environments by considering problems of great importance in technological and biological applications. Finally, the last group deals with quantum mechanical calculations related to the role of water in chemical processes. The first group of papers is introduced by the general paper of Stanley et al. The authors discuss recent progress in understanding the anomalies of water in bulk, nanoconfined, and biological environments. They present evidence that liquid water may display 'polymorphism', a property that can be present in

  18. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  19. Velocity centroids as tracers of the turbulent velocity statistics

    CERN Document Server

    Lazarian, A E A

    2004-01-01

    We use the results of magnetohydrodynamic (MHD) simulations to emulate spectroscopic observations, and produce maps of variations of velocity centroids to study their scaling properties. We compare them with those of the underlying velocity field, and analytic predictions presented in a previous paper (Lazarian & Esquivel 2003). We tested, with success, a criteria for recovering velocity statistics from velocity centroids derived in our previous work. That is, if >> (where S is a 2D map of ``unnormalized'', v velocity, and I integrated intensity map -column density-), then the structure function of the centroids is dominated by the structure function of velocity. We show that it is possible to extract the velocity statistics using centroids for subsonic and mildly supersonic turbulence (e.g. Mach numbers ~2.5). While, towards higher Mach numbers other effects could affect significantly the statistics of centroids.

  20. Statistics of Velocity from Spectral Data Modified Velocity Centroids

    CERN Document Server

    Lazarian, A

    2003-01-01

    We address the problem of studying interstellar (ISM) turbulence using spectral line data. We construct a measure that we term modified velocity centroids (MVCs) and derive an analytical solution that relates the 2D spectra of the modified centroids with the underlying 3D velocity spectrum. We test our results using synthetic maps constructed with data obtained through simulations of compressible MHD turbulence. We prove that the MVCs are able to restore the underlying spectrum of turbulent velocity. We show that the modified velocity centroids (MVCs) are complementary to the the Velocity Channel Analysis (VCA) technique that we introduced earlier. Employed together they make determining of the velocity spectral index more reliable. At the same time we show that MVCs allow to determine velocity spectra when the underlying statistics is not a power law and/or the turbulence is subsonic.

  1. Interface Simulation Distances

    Directory of Open Access Journals (Sweden)

    Pavol Černý

    2012-10-01

    Full Text Available The classical (boolean notion of refinement for behavioral interfaces of system components is the alternating refinement preorder. In this paper, we define a distance for interfaces, called interface simulation distance. It makes the alternating refinement preorder quantitative by, intuitively, tolerating errors (while counting them in the alternating simulation game. We show that the interface simulation distance satisfies the triangle inequality, that the distance between two interfaces does not increase under parallel composition with a third interface, and that the distance between two interfaces can be bounded from above and below by distances between abstractions of the two interfaces. We illustrate the framework, and the properties of the distances under composition of interfaces, with two case studies.

  2. Efficient collinear frequency tripling of femtosecond laser with compensation of group velocity delay

    Institute of Scientific and Technical Information of China (English)

    Wang Yan-Ling; Zhou Xu-Gui; Wu Hong; Ding Liang-En

    2009-01-01

    This paper demonstrates an approach that negative uniaxial crystal has a relative anomalous dispersion effect which can compensate group velocity delay, and applies this approach to nonlinear frequency conversion of an ultrafast laser field. High efficiency of the third harmonic generation is experimentally fulfilled by adopting a collinear configuration of doubing-compensation-tripling system. Through finely adjusting the incident angle and optical axis direction of the compensation plate, it obtains ultraviolet (UV) output energy of 0.32 mJ centered at 270 nm with spectral bandwidth of 2 nm when input beam at 800 nm was 70 fs pulse duration and 6 mJ pulse energy which was extracted from Ti:sapphire laser system by a diaphragm, corresponding to an 800-to-270 nm conversion efficiency of 5.3% and a factor-of-1.6 improvement in the third harmonic generation of UV band in comparison with a general conventional configuration. Furthermore, when the full energy of 18 mJ from a Ti:sapphire laser system was used and optimized, the UV emission could reach 0.83 mJ.

  3. Rayleigh scattering in sapphire test mass for laser interferometric gravitational-wave detectors:. II: Rayleigh scattering induced noise in a laser interferometric-wave detector

    Science.gov (United States)

    Benabid, F.; Notcutt, M.; Ju, L.; Blair, D. G.

    1999-10-01

    We present the level of noise induced by Rayleigh-scattered light from sapphire test mass, the limit of scattering loss on build-up power inside the interferometer and finally the tolerable absorption loss in order to meet the specification of the interferometer sensitivity. The results show that the Rayleigh scattering induced noise remains below h˜10 -25 Hz -1/2 and a higher tolerance on the absorption level in sapphire substrate compared with silica substrate.

  4. Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

    1991-06-29

    Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

  5. Minimal information in velocity space

    CERN Document Server

    Evrard, Guillaume

    1995-01-01

    Jaynes' transformation group principle is used to derive the objective prior for the velocity of a non-zero rest-mass particle. In the case of classical mechanics, invariance under the classical law of addition of velocities, leads to an improper constant prior over the unbounded velocity space of classical mechanics. The application of the relativistic law of addition of velocities leads to a less simple prior. It can however be rewritten as a uniform volumetric distribution if the relativistic velocity space is given a non-trivial metric.

  6. After Rigid Interfaces

    DEFF Research Database (Denmark)

    Troiano, Giovanni Maria

    Deformable and shape-changing interfaces are rapidly emerging in the field of human-computer interaction (HCI). Deformable interfaces provide users with newer input possibilities such as bending, squeezing, or stretching, which were impossible to achieve with rigid interfaces. Shape-changing inte......Deformable and shape-changing interfaces are rapidly emerging in the field of human-computer interaction (HCI). Deformable interfaces provide users with newer input possibilities such as bending, squeezing, or stretching, which were impossible to achieve with rigid interfaces. Shape...

  7. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

    Science.gov (United States)

    Miyake, Hideto; Lin, Chia-Hung; Tokoro, Kenta; Hiramatsu, Kazumasa

    2016-12-01

    The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped "face-to-face" to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1600-1700 °C. The full widths at half maximum of the (0002)- and (10 1 bar2)-plane X-ray rocking curves were improved to 49 and 287 arcsec, respectively, owing to the annihilation of domain boundaries in the sputtered AlN films, which concurrently increased the compressive stress in the films.

  8. Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

    Science.gov (United States)

    Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

    2016-11-01

    Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

  9. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

    Science.gov (United States)

    Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

    2013-08-23

    Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

  10. Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The orientation of the nano-columnar ZnO films grown on sapphire using the technique of metal-organic chemical vapor deposition (MOCVD) exhibits deviation because of the mismatch between the crystal lattices of the films and the sapphire substrate. A high-throughout X-ray diffraction method was employed to determine the crystal orientation of the ZnO films at a time scale of the order of minutes based on the general area detection diffraction system (GADDS). This rapid, effective, and ready method, adapted for characterizing the orientation of the nano-columnar crystals is used to directly explain the results of observation of the X-ray diffraction images, by the measurements of the orientations of the crystal columns of the ZnO films along c-axis and in parallel to ab plane.

  11. High Q-factor Sapphire Whispering Gallery Mode Microwave Resonator at Single Photon Energies and milli-Kelvin Temperatures

    CERN Document Server

    Creedon, Daniel L; Farr, Warrick; Martinis, John M; Duty, Timothy L; Tobar, Michael E

    2011-01-01

    The microwave properties of a crystalline sapphire dielectric whispering gallery mode resonator have been measured at very low excitation strength (E/hf=1) and low temperatures (T = 30 mK). The measurements were sensitive enough to observe saturation due to a highly detuned electron spin resonance, which limited the loss tangent of the material to about 2e-8 measured at 13.868 and 13.259 GHz. Small power dependent frequency shifts were also measured which correspond to an added magnetic susceptibility of order 1e-9. This work shows that quantum limited microwave resonators with Q-factors > 1e8 are possible with the implementation of a sapphire whispering gallery mode system.

  12. Visual control of walking velocity.

    Science.gov (United States)

    François, Matthieu; Morice, Antoine H P; Bootsma, Reinoud J; Montagne, Gilles

    2011-06-01

    Even if optical correlates of self-motion velocity have already been identified, their contribution to the control of displacement velocity remains to be established. In this study, we used a virtual reality set-up coupled to a treadmill to test the role of both Global Optic Flow Rate (GOFR) and Edge Rate (ER) in the regulation of walking velocity. Participants were required to walk at a constant velocity, corresponding to their preferred walking velocity, while eye height and texture density were manipulated. This manipulation perturbed the natural relationship between the actual walking velocity and its optical specification by GOFR and ER, respectively. Results revealed that both these sources of information are indeed used by participants to control walking speed, as demonstrated by a slowing down of actual walking velocity when the optical specification of velocity by either GOFR or ER gives rise to an overestimation of actual velocity, and vice versa. Gait analyses showed that these walking velocity adjustments result from simultaneous adaptations in both step length and step duration. The role of visual information in the control of self-motion velocity is discussed in relation with other factors.

  13. High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

    Science.gov (United States)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced

  14. Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

    Institute of Scientific and Technical Information of China (English)

    KANG Chao-Yang; TANG Jun; LIU Zhong-Liang; LI Li-Min; YAN Wen-Sheng; WEI Shi-Qiang; XU Peng-Shou

    2011-01-01

    Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber.The reflection high energy diffraction,Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample,which confirm the formation of graphene layers.The mean domain size of FLG is around 29.2 nm and the layer number is about 2-3.The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated a-SiC surface.Graphene,a monolayer of sp2-bonded carbon atoms,is a quasi two-dimensional (2D) material.It has attracted great interest because of its distinctive band structure and physical properties.[1] Graphene can now be obtained by several different approaches including micromechanical[1] and chemical[2] exfoliation of graphite,epitaxial growth on hexagonal SiC substrates by Si sublimation in vacuum,[3] and CVD growth on metal substrates.[4] However,these preparation methods need special substrates,otherwise,in order to design microelectronic devices,the prepared graphene should be transferred to other appropriate substrates.Thus the growth of graphene on the suitable substrates is motivated.%Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample, which confirm the formation of graphene layers. The mean domain size of FLG is around 29.2nm and the layer number is about 2-3. The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated α-SiC surface.

  15. TER-XSW investigation of CoPt{sub 3} nanoparticle films on Si and sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zargham, Ardalan; Schmidt, Thomas; Hildebrand, Radowan; Falta, Jens [Institute of Solid State Physics, University of Bremen (Germany); Gehl, Bernhard; Baeumer, Marcus [Institute of Physical Chemistry, University of Bremen (Germany)

    2008-07-01

    CoPt{sub 3} bimetallic colloidal nanoparticle films on Si and sapphire substrates are investigated concerning the real space distribution of Co and Pt in specifically defined layers above the substrates as well as the structural dependancy on plasma treatments. TER-XSW is considered to be a suitable method for these types of investigation because of its ability of material specification in vertical resolution. It is simultaneously possible to understand the surface morphology by means of XRR.

  16. Self-starting mode-locked picosecond Ti:sapphire laser by using of a fast SESAM

    Institute of Scientific and Technical Information of China (English)

    Zhu Jiang-Feng; Tian Jin-Rong; Wang Peng; Ling Wei-Jun; Li De-Hua; Wei Zhi-Yi

    2006-01-01

    A stable continuous wave mode-locked picosecond Ti:sapphire laser by using a fast semiconductor saturable absorber mirror (SESAM) is demonstrated. The laser delivers pulse width of 20 ps at a central wavelength of 813 nm and a repetition rate of 100 MHz. The maximum output power is 1.34 W with pump power of 7 W which corresponds to an optical-optical conversion efficiency of 19.1%.

  17. High energy femtosecond mid-infrared generation pumped by a two-color Ti:sapphire multipass amplifier

    Institute of Scientific and Technical Information of China (English)

    XIA JiangFan; SONG Jie; Donna T. Strickland

    2008-01-01

    Intense mid-infrared was generated by direct frequency mixing two pulses from a dual-wavelength Ti:sapphire system. From a multipass amplifier we generated two tunable wavelength femtosecond pulses with a total energy of 15 mJ. Pulse energy of 1.6 μJ and 7.4 μJ of mid-infrared light is achieved with and without its multipass amplifier at 9-11 μm, with pulse duration of 500 fs.

  18. Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

    2014-09-30

    This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

  19. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  20. Enhancement of Thermal Conductance at Metal-Dielectric Interfaces Using Subnanometer Metal Adhesion Layers

    Science.gov (United States)

    Jeong, Minyoung; Freedman, Justin P.; Liang, Hongliang Joe; Chow, Cheng-Ming; Sokalski, Vincent M.; Bain, James A.; Malen, Jonathan A.

    2016-01-01

    We show that the use of subnanometer adhesion layers significantly enhances the thermal interface conductance at metal-dielectric interfaces. A metal-dielectric interface between Au and sapphire (Al2O3) is considered using Cu (low optical loss) and Cr (high optical loss) as adhesion layers. To enable high throughput measurements, each adhesion layer is deposited as a wedge such that a continuous range of thicknesses could be sampled. Our measurements of thermal interface conductance at the metal-Al2O3 interface made using frequency-domain thermoreflectance show that a 1-nm-thick adhesion layer of Cu or Cr is sufficient to enhance the thermal interface conductance by more than a factor of 2 or 4, respectively, relative to the pure Au/Al2O3 interface. The enhancement agrees with the diffuse-mismatch-model-based predictions of accumulated thermal conductance versus adhesion-layer thickness assuming that it contributes phonons with wavelengths less than its thickness, while those with longer wavelengths transmit directly from the Au.

  1. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  2. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-11-01

    This report summarizes technical progress over the second six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on evaluating corrosion effects in single crystal sapphire at temperatures up to 1400 C, and designing the sensor mechanical packaging with input from Wabash River Power Plant. Upcoming meetings will establish details for the gasifier field test.

  3. The sub-micron hole array in sapphire produced by inductively-coupled plasma reactive ion etching.

    Science.gov (United States)

    Shiao, Ming-Hua; Chang, Chun-Ming; Huang, Su-Wei; Lee, Chao-Te; Wu, Tzung-Chen; Hsueh, Wen-Jeng; Ma, Kung-Jeng; Chiang, Donyau

    2012-02-01

    The sub-micron hole array in a sapphire substrate was fabricated by using nanosphere lithography (NSL) combined with inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. Polystyrene nanospheres of about 600 nm diameter were self-assembled on c-plane sapphire substrates by the spin-coating method. The diameter of polystyrene nanosphere was modified by using oxygen plasma in ICP-RIE system. The size of nanosphere modified by oxygen plasma was varied from 550 to 450 nm with different etching times from 15 to 35 s. The chromium thin film of 100 nm thick was then deposited on the shrunk nanospheres on the substrate by electron-beam evaporation system. The honeycomb type chromium mask can be obtained on the sapphire substrate after the polystyrene nanospheres were removed. The substrate was further etched in two sets of chlorine/Argon and boron trichloride/Argon mixture gases at constant pressure of 50 mTorr in ICP-RIE processes. The 400 nm hole array in diameter can be successfully produced under suitable boron trichloride/Argon gas flow ratio.

  4. Three-dimensional structuring of sapphire by sequential He sup + ion-beam implantation and wet chemical etching

    CERN Document Server

    Crunteanu, A; Hoffmann, P; Pollnau, M; Buchal, C; Petraru, A; Eason, R W; Shepherd, D P

    2003-01-01

    We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 mu m and subsequent selective wet chemical etching of the damaged regions by hot H sub 3 PO sub 4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1 x 10 sup 1 sup 6 to 5 x 10 sup 1 sup 7 He sup + /cm sup 2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. (orig.)

  5. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  6. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  7. Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

    Science.gov (United States)

    Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio

    2017-02-01

    Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO2 probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

  8. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Study on planarization machining of sapphire wafer with soft-hard mixed abrasive through mechanical chemical polishing

    Science.gov (United States)

    Xu, Yongchao; Lu, Jing; Xu, Xipeng

    2016-12-01

    This study investigated the material removal mechanism of sapphire wafer with soft-hard mixed abrasives through mechanical chemical polishing (MCP). The polishing film, which contains diamond as hard abrasives and high reactivity silica as soft abrasives, is prepared through sol-gel technology. Silica abrasives with regular spherical shape and high reactivity are prepared through hydrolysis-precipitation. Diamond grits with three different particle sizes are used as abrasives. Results show that the rate of material removal of mixed abrasives during MCP is more than 52.6% of that of single hard abrasives and the decrease in surface roughness is more than 21.6% of that of single hard abrasives. These results demonstrate that the ideal planarization of sapphire wafer with high removal rate and good surface quality can be achieved when the effect of mechanical removal of hard abrasives and the chemical corrosion effect of soft abrasives are in dynamic equilibrium. A model that describes the material removal mechanism of sapphire with mixed abrasives during MCP is proposed. The results of thermodynamic calculation and polishing residue analysis are used to demonstrate the rationality of the model.

  10. Counterposition and negative phase velocity in uniformly moving dissipative materials

    Energy Technology Data Exchange (ETDEWEB)

    Mackay, Tom G [School of Mathematics and Maxwell Institute for Mathematical Sciences, University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Lakhtakia, Akhlesh [NanoMM-Nanoengineered Metamaterials Group, Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802-6812 (United States)], E-mail: T.Mackay@ed.ac.uk, E-mail: akhlesh@psu.edu

    2009-10-16

    We considered the phenomena of counterposition and negative phase velocity, which are relevant to certain metamaterials and certain astrophysical scenarios. The Lorentz transformations of electric and magnetic fields were implemented to study (i) the refraction of linearly polarized plane waves into a half-space occupied by a uniformly moving material and (ii) the traversal of linearly polarized Gaussian beams through a uniformly moving slab. Motion was taken to occur tangentially to the interface(s) and in the plane of incidence. The moving materials were assumed to be isotropic, homogeneous and dissipative dielectric materials from the perspective of a co-moving observer. Two different moving materials were considered: from the perspective of a co-moving observer, material A supports planewave propagation with only positive phase velocity, whereas material B supports planewave propagation with both positive and negative phase velocity, depending on the polarization state. For both materials A and B, the sense of the phase velocity and whether or not counterposition occurred, as perceived by a non-co-moving observer, could be altered by varying the observer's velocity. Furthermore, the lateral position of a beam upon propagating through a uniformly moving slab made of material A, as perceived by a non-co-moving observer, could be controlled by varying the observer's velocity. In particular, at certain velocities, the transmitted beam emerged from the slab laterally displaced in the direction opposite to the direction of incident beam. The transmittances of a uniformly moving slab made of material B were very small and the energy density of the transmitted beam was largely concentrated in the direction normal to the slab, regardless of the observer's velocity.

  11. After Rigid Interfaces

    DEFF Research Database (Denmark)

    Troiano, Giovanni Maria

    to convey particular information (e.g., big-isurgent, loud-is-up). The second work presents a large-scale analysis of 340 Sci-Fi movies that identifies instances of shape-changing interfaces. Results from the analysis reveals emergent behavioral patterns of shape change, namely Reconfiguration......Deformable and shape-changing interfaces are rapidly emerging in the field of human-computer interaction (HCI). Deformable interfaces provide users with newer input possibilities such as bending, squeezing, or stretching, which were impossible to achieve with rigid interfaces. Shape......-changing interfaces can reconfigure their shape dynamically, providing users with new affordances and output modalities. This thesis contributes to both the field of deformable interfaces and shape-changing interfaces through empirical research. In the area of deformable interfaces, this thesis presents two studies...

  12. Interface localization near criticality

    CERN Document Server

    Delfino, Gesualdo

    2016-01-01

    The theory of interface localization in near-critical planar systems at phase coexistence is formulated from first principles. We show that mutual delocalization of two interfaces, amounting to interfacial wetting, occurs when the bulk correlation length critical exponent $\

  13. Microcomputer interfacing and applications

    CERN Document Server

    Mustafa, M A

    1990-01-01

    This is the applications guide to interfacing microcomputers. It offers practical non-mathematical solutions to interfacing problems in many applications including data acquisition and control. Emphasis is given to the definition of the objectives of the interface, then comparing possible solutions and producing the best interface for every situation. Dr Mustafa A Mustafa is a senior designer of control equipment and has written many technical articles and papers on the subject of computers and their application to control engineering.

  14. Low-temperature dynamics of kinks on Ising interfaces.

    Science.gov (United States)

    Karma, Alain; Lobkovsky, Alexander E

    2005-03-01

    The anisotropic motion of an interface driven by its intrinsic curvature or by an external field is investigated in the context of the kinetic Ising model in both two and three dimensions. We derive in two dimensions (2D) a continuum evolution equation for the density of kinks by a time-dependent and nonlocal mapping to the asymmetric exclusion process. Whereas kinks execute random walks biased by the external field and pile up vertically on the physical 2D lattice, they execute hard-core biased random walks on a transformed 1D lattice. Their density obeys a nonlinear diffusion equation which can be transformed into the standard expression for the interface velocity, v=M [ (gamma+gamma'') kappa+H] , where M , gamma+gamma", and kappa are the interface mobility, stiffness, and curvature, respectively. In 3D, we obtain the velocity of a curved interface near the 100 orientation from an analysis of the self-similar evolution of 2D shrinking terraces. We show that this velocity is consistent with the one predicted from the 3D tensorial generalization of the law for anisotropic curvature-driven motion. In this generalization, both the interface stiffness tensor and the curvature tensor are singular at the 100 orientation. However, their product, which determines the interface velocity, is smooth. In addition, we illustrate how this kink-based kinetic description provides a useful framework for studying more complex situations by modeling the effect of immobile dilute impurities.

  15. Development of an optimal velocity selection method with velocity obstacle

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Geuk; Oh, Jun Ho [KAIST, Daejeon (Korea, Republic of)

    2015-08-15

    The Velocity obstacle (VO) method is one of the most well-known methods for local path planning, allowing consideration of dynamic obstacles and unexpected obstacles. Typical VO methods separate a velocity map into a collision area and a collision-free area. A robot can avoid collisions by selecting its velocity from within the collision-free area. However, if there are numerous obstacles near a robot, the robot will have very few velocity candidates. In this paper, a method for choosing optimal velocity components using the concept of pass-time and vertical clearance is proposed for the efficient movement of a robot. The pass-time is the time required for a robot to pass by an obstacle. By generating a latticized available velocity map for a robot, each velocity component can be evaluated using a cost function that considers the pass-time and other aspects. From the output of the cost function, even a velocity component that will cause a collision in the future can be chosen as a final velocity if the pass-time is sufficiently long enough.

  16. Development of Sensors Using Evanescent Wave Interactions in Sapphire Optical Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Michael W. Renfro; Eric H. Jordan

    2006-12-31

    The development of tunable diode laser absorption sensors for measurements in industrial boilers, both through direct absorption and evanescent wave absorption have been performed in the work presented here. These sensors use both direct and indirect absorption through the use of evanescent interactions within a coal firing combustion environment. For the direct absorption sensor, wavelength modulation absorption spectroscopy with second-harmonic detection was implemented within a physical probe designed to be placed with the flue stack of a power plant. Measurements were taken of carbon dioxide and water vapor concentration during operation at a local industrial facility. The design of this sensor probe overcomes problems of beam steering and permits a reference gas measurement. Extracted concentration data and design elements from the direct absorption measurements are presented. In addition, development of a sapphire fiber-based sensor using evanescent wave absorption along the outside of the fiber is presented. Evanescent absorption allows for the laser transmission to be maintained in the fiber at all times and may alleviate problems of background emission, beam steering, and especially scattering of the laser beam from solid particles experienced through free path direct absorption measurements in particulated flows. Laboratory measurements using evanescent fiber detection are presented.

  17. Mesoscale Laser Processing using Excimer and Short-Pulse Ti: Sapphire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Shirk, M D; Rubenchik, A M; Gilmer, G H; Stuart, B C; Armstrong, J P; Oberhelman, S K; Baker, S L; Nikitin, A J; Mariella, R P

    2003-07-28

    Targets to study high-energy density physics and inertial confinement fusion processes have very specific and precise tolerances that are pushing the state-of-the-art in mesoscale microsculpting technology. A significant effort is required in order to advance the capabilities to make these targets with very challenging geometries. Ultrashort pulsed (USP) Ti:Sapphire lasers and excimer lasers are proving to be very effective tools in the fabrication of the very small pieces that make up these targets. A brief description of the dimensional and structural requirements of these pieces will be presented, along with theoretical and experimental results that demonstrate to what extent these lasers are achieving the desired results, which include sub-{mu}m precision and RMS surface values well below 100 nm. This work indicates that excimer lasers are best at sculpting the polymer pieces and that the USP lasers work quite well on metal and aerogel surfaces, especially for those geometries that cannot be produced using diamond machining and where material removal amounts are too great to do with focused ion beam milling in a cost effective manner. In addition, the USP laser may be used as part of the procedure to fill target capsules with fusion fuel, a mixture of deuterium and tritium, without causing large perturbations on the surface of the target by keeping holes drilled through 125 {micro}m of beryllium below 5 {micro}m in diameter.

  18. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-02-01

    Full Text Available High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001 via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  19. Defects creation in sapphire by swift heavy ions: A fluence depending process

    Energy Technology Data Exchange (ETDEWEB)

    Kabir, A. [LRPCSI, Universite 20 Aout 55, BP 26, Route d' El-Hadaiek, Skikda (Algeria)], E-mail: a.nour_kabir@yahoo.fr; Meftah, A. [LRPCSI, Universite 20 Aout 55, BP 26, Route d' El-Hadaiek, Skikda (Algeria); Stoquert, J.P. [InESS, 23, rue du Loess - BP 20 CR - F-67037 Strasbourg Cedex 02 (France); Toulemonde, M.; Monnet, I. [CIMAP, BP 5133, 14070 Caen Cedex 05 (France)

    2009-03-15

    Single crystals of sapphire ({alpha}-Al{sub 2}O{sub 3}) were irradiated at GANIL with 0.7 MeV/amu xenon ions corresponding to an electronic stopping power of 21 keV/nm. Several fluences were applied between 5 x 10{sup 11} and 2 x 10{sup 14} ions/cm{sup 2}. Irradiated samples were characterized using optical absorption spectroscopy. This technique exhibited the characteristic bands associated with F and F{sup +} centers defects. The F centers density was found to increase with the fluence following two different kinetics: a rapid increase for fluences less than 10{sup 13} ions/cm{sup 2} and then, a slow increase for higher fluences. For fluences less than 10{sup 13} ions/cm{sup 2}, results are in good agreement with those obtained by Canut et al. [B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thevenard, M. Toulemonde, Phys. Rev. B 51 (1995) 12194]. In the fluences range: 10{sup 13}-10{sup 14} ions/cm{sup 2}, the F centers defects creation process is found to be different from the one evidenced for fluences less than 10{sup 13} ions/cm{sup 2}.

  20. Latent tracks in sapphire induced by 20-MeV fullerene beams

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, S.M.; Bonardi, N.; Canut, B. [Departement de Physique des Materiaux (UMR CNRS 5586), Universite Claude Bernard Lyon I, 69622 Villeurbanne Cedex (France); Della-Negra, S. [Institut de Physique Nucleaire, CNRS-IN2P3, 91406 Orsay (France)

    1998-01-01

    Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated with 20-MeV fullerene beams in a fluence range from 1.0{times}10{sup 10} to 2.2{times}10{sup 11} C{sub 60}{sup +}cm{sup {minus}2}. The cluster electronic stopping power (dE/dx){sub e} was approximately 62keVnm{sup {minus}1}. Two complementary techniques were employed to assess the modifications induced by these irradiations: Rutherford-backscattering spectrometry in channeling geometry (RBS-C) and transmission electron microscopy (TEM). The disorder induced by electronic processes is clearly determined by the RBS-C analysis. A damage cross section A{sub e} of about 2.2{times}10{sup {minus}12}cm{sup 2} has been extracted from the disorder kinetics, which corresponds to a track radius of {approx}8.5nm. From lattice-disorder profiling, a maximal decorrelation length of the C{sub 60} clusters in the crystal was estimated to be {approx}150nm. TEM micrographs exhibit cylindrical latent tracks formed around the projectile trajectory, while the high-resolution observations evidence the amorphization of sapphire in the core of these tracks. The present results have been interpretated within a model of high locally deposited energy densities in the cluster irradiation regime. {copyright} {ital 1998} {ital The American Physical Society}

  1. Defects creation in sapphire by swift heavy ions: A fluence depending process

    Science.gov (United States)

    Kabir, A.; Meftah, A.; Stoquert, J. P.; Toulemonde, M.; Monnet, I.

    2009-03-01

    Single crystals of sapphire (α-Al 2O 3) were irradiated at GANIL with 0.7 MeV/amu xenon ions corresponding to an electronic stopping power of 21 keV/nm. Several fluences were applied between 5 × 10 11 and 2 × 10 14 ions/cm 2. Irradiated samples were characterized using optical absorption spectroscopy. This technique exhibited the characteristic bands associated with F and F + centers defects. The F centers density was found to increase with the fluence following two different kinetics: a rapid increase for fluences less than 10 13 ions/cm 2 and then, a slow increase for higher fluences. For fluences less than 10 13 ions/cm 2, results are in good agreement with those obtained by Canut et al. [B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thévenard, M. Toulemonde, Phys. Rev. B 51 (1995) 12194]. In the fluences range: 10 13-10 14 ions/cm 2, the F centers defects creation process is found to be different from the one evidenced for fluences less than 10 13 ions/cm 2.

  2. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.

  3. Grain boundary structure and solute segregation in titanium-doped sapphire bicrystals

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Seth T.

    2002-05-17

    Solute segregation to ceramic grain boundaries governs material processing and microstructure evolution, and can strongly influence material properties critical to engineering performance. Understanding the evolution and implications of grain boundary chemistry is a vital component in the greater effort to engineer ceramics with controlled microstructures. This study examines solute segregation to engineered grain boundaries in titanium-doped sapphire (Al2O3) bicrystals, and explores relationships between grain boundary structure and chemistry at the nanometer scale using spectroscopic and imaging techniques in the transmission electron microscope (TEM). Results demonstrate dramatic changes in solute segregation stemming from small fluctuations in grain boundary plane and structure. Titanium and silicon solute species exhibit strong tendencies to segregate to non-basal and basal grain boundary planes, respectively. Evidence suggests that grain boundary faceting occurs in low-angle twis t boundaries to accommodate nonequilibrium solute segregation related to slow specimen cooling rates, while faceting of tilt grain boundaries often occurs to expose special planes of the coincidence site lattice (CSL). Moreover, quantitative analysis of grain boundary chemistry indicates preferential segregation of charged defects to grain boundary dislocations. These results offer direct proof that static dislocations in ionic materials can assume a net charge, and emphasize the importance of interactions between charged point, line, and planar defects in ionic materials. Efforts to understand grain boundary chemistry in terms of space charge theory, elastic misfit and nonequilibrium segregation are discussed for the Al2O3 system.

  4. Laser-induced microexplosion confined in the bulk of a sapphire crystal: evidence of multimegabar pressures.

    Science.gov (United States)

    Juodkazis, S; Nishimura, K; Tanaka, S; Misawa, H; Gamaly, E G; Luther-Davies, B; Hallo, L; Nicolai, P; Tikhonchuk, V T

    2006-04-28

    Extremely high pressures (approximately 10 TPa) and temperatures (5 x 10(5) K) have been produced using a single laser pulse (100 nJ, 800 nm, 200 fs) focused inside a sapphire crystal. The laser pulse creates an intensity over 10(14) W/cm2 converting material within the absorbing volume of approximately 0.2 microm3 into plasma in a few fs. A pressure of approximately 10 TPa, far exceeding the strength of any material, is created generating strong shock and rarefaction waves. This results in the formation of a nanovoid surrounded by a shell of shock-affected material inside undamaged crystal. Analysis of the size of the void and the shock-affected zone versus the deposited energy shows that the experimental results can be understood on the basis of conservation laws and be modeled by plasma hydrodynamics. Matter subjected to record heating and cooling rates of 10(18) K/s can, thus, be studied in a well-controlled laboratory environment.

  5. Reduction of batwing effect in white light interferometry for measurement of patterned sapphire substrates (PSS) wafer

    Science.gov (United States)

    Tapilouw, Abraham Mario; Chang, Yi-Wei; Yu, Long-Yo; Wang, Hau-Wei

    2016-08-01

    Patterned sapphire substrates (PSS) wafers are used in LED manufacturing to enhance the luminous conversion of LED chips. The most critical characteristics in PSS wafers are height, width, pitch and shape of the pattern. The common way to measure these characteristics is by using surface electron microscope (SEM). White light interferometry is capable to measure dimension with nanometer accuracy and it is suitable for measuring the characteristics of PSS wafers. One of the difficulties in measuring PSS wafers is the aspect ratio and density of the features. The high aspect ratio combined with dense pattern spacing diffracts incoming lights and reduces the accuracy of the white light interferometry measurement. In this paper, a method to improve the capability of white light interferometry for measuring PSS wafers by choosing the appropriate wavelength and microscope objective with high numerical aperture. The technique is proven to be effective for reducing the batwing effect in edges of the feature and improves measurement accuracy for PSS wafers with circular features of 1.95 um in height and diameters, and 700 nm spacing between the features. Repeatability of the measurement is up to 5 nm for height measurement and 20 nm for pitch measurement.

  6. Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE

    Institute of Scientific and Technical Information of China (English)

    LU Dian-qing; LI Xin-hua; LIU Xue-dong

    2005-01-01

    The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 min, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.

  7. The Autonomous Cryocooled Sapphire Oscillator: A Reference for Frequency Stability and Phase Noise Measurements

    Science.gov (United States)

    Giordano, V.; Grop, S.; Fluhr, C.; Dubois, B.; Kersalé, Y.; Rubiola, E.

    2016-06-01

    The Cryogenic Sapphire Oscillator (CSO) is the microwave oscillator which feature the highest short-term stability. Our best units exhibit Allan deviation σy (τ) of 4.5x10-16 at 1s, ≈ 1.5x10-16 at 100 s ≤ t ≤ 5,000 s (floor), and ≤ 5x10-15 at one day. The use of a Pulse-Tube cryocooler enables full two year operation with virtually no maintenance. Starting with a short history of the CSO in our lab, we go through the architecture and we provide more details about the resonator, the cryostat, the oscillator loop, and the servo electronics. We implemented three similar oscillators, which enable the evaluation of each with the three- cornered hat method, and provide the potential for Allan deviation measurements at parts of 10-17 level. One of our CSOs (ULISS) is transportable, and goes with a small customized truck. The unique feature of ULISS is that its σy (τ) can be validated at destination by measuring before and after the roundtrip. To this extent, ULISS can be regarded as a traveling standard of frequency stability. The CSOs are a part of the Oscillator IMP project, a platform dedicated to the measurement of noise and short-term stability of oscillators and devices in the whole radio spectrum (from MHz to THz), including microwave photonics. The scope spans from routine measurements to the research on new oscillators, components, and measurement methods.

  8. Modeling of dopant segregation in sapphire single crystal fibre growth by Micro-Pulling-Down method

    Science.gov (United States)

    Wenjia, Su; Duffar, Thierry; Nehari, Abdeljelil; Kononets, Valerii; Lebbou, Kheirreddine

    2017-09-01

    Experiments and numerical simulations are conducted in order to study the causes and solutions for the Ti inhomogeneity problem in Ti doped sapphire Micro-Pulling-Down (μ-PD) growth. The measurement and modeling of the thermal and flow fields, electromagnetic field, Ti concentration in the molten zone and along the fibre axis are compared. For the mean Ti concentration along the fibre and temperature along the iridium crucible, the modeling results are consistent with experiments. Results showed that for high pulling rate, the mass transfer in the capillary is dominated by convection. Marangoni convection is strong in the meniscus due to the large temperature gradient, which has great impact on the Ti distribution for different fibre radii. For high pulling rate, Ti concentration increases quickly from the seed along the fibre axis, and reaches a constant value after about 0.5-2 mm. Radial segregation is high for large diameter fibres. The constant Ti concentration along the fibre axis is increasing when increasing the fibre radius from 0.2 to 0.6 mm. For 0.8 mm, it decreases due to the change of the vortex. At low growth rate, the transport in the capillary is diffusive, back to the crucible, which leads to a Scheil-like Ti distribution, in full agreement with the experimental results.

  9. A sapphire fibre thermal probe based on fast Fourier transform and phase-lock loop

    Institute of Scientific and Technical Information of China (English)

    Wang Yu-Tian; Wang Dong-Sheng; Ge Wen-Qian; Cui Li-Chao

    2006-01-01

    A sapphire fibre thermal probe with Cra+ ion-doped end is developed by using the laser heated pedestal growth method. The fluorescence thermal probe offers advantages of compact structure, high performance and ability to withstand high temperature in a detection range from room temperature to 450℃. Based on the fast Fourier transform(FFT), the fluorescence lifetime is obtained from the tangent function of phase angle of the non-zeroth terms in the FFT result. This method has advantages such as quick calculation, high accuracy and immunity to the background noise. This FFT method is compared with other traditional fitting methods, indicating that the standard deviation of the FFT method is about half of that of the Prony method and about 1/6 of that of the log-fit method. And the FFT method is immune to the background noise involved in a signal. So, the FFT method is an excellent way of processing signals. In addition, a phase-lock amplifier can effectively suppress the noise.

  10. Dash line glass- and sapphire-cutting with high power USP laser

    Science.gov (United States)

    Mishchik, Konstantin; Chassagne, Bruno; Javaux-Léger, Clémentine; Hönninger, Clemens; Mottay, Eric; Kling, Rainer; Lopez, John

    2016-03-01

    Glass cutting is a subject of high interest for flat panel display and consumer electronics industries. Among laser-based, water jet-based and diamond tool-based existing solutions, ultra-short pulses (USP) appear as a promising technology since this laser technology has the unique capacity to produce highly localized bulk modification owing to non-linear absorption. The cutting using USP lasers could be performed either by full ablation which is slow and generates a lot of dust, by controlled fracture propagation which is slow as well and may lead to path deviation, by stealth dicing which produces rough sidewalls, or by self-breaking induced by in-volume laser irradiation. The laser treatment is often continuous which is not necessary to perform glass cutting and may lead to over-exposure. In this paper we report on single pass glass and sapphire cutting using an USP laser (20W @200kHz or 8W@2MHz) using dash line laser treatment along the cutting trajectory. In-volume energy deposition was done along the glass thickness owing to a Bessel beam. The results will be discussed in terms of sidewall profile and roughness, path deviation, rim sharpness, energy dose and feed rate. Dash line treatment enables to tune the energy deposition and to produce the cutting effect but with a narrower heat affected zone, a better sidewall quality and a more accurate trajectory control of the cutting path.

  11. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Schwinkendorf, Jan-Patrick

    2012-08-15

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  12. Complex Interfaces Under Change

    DEFF Research Database (Denmark)

    Rosbjerg, Dan

    and mechanical processes that develop within this structure. Water-related processes at the interfaces between the compartments are complex, depending both on the interface itself, and on the characteristics of the interfaced compartments. Various aspects of global change directly or indirectly impact...

  13. Water at Interfaces

    DEFF Research Database (Denmark)

    Björneholm, Olle; Hansen, Martin Hangaard; Hodgson, Andrew

    2016-01-01

    The interfaces of neat water and aqueous solutions play a prominent role in many technological processes and in the environment. Examples of aqueous interfaces are ultrathin water films that cover most hydrophilic surfaces under ambient relative humidities, the liquid/solid interface which drives...

  14. Velocity dependant splash behaviour

    Science.gov (United States)

    Hamlett, C. A. E.; Shirtcliffe, N. J.; McHale, G.; Ahn, S.; Doerr, S. H.; Bryant, R.; Newton, M. I.

    2012-04-01

    Extreme soil water repellency can occur in nature via condensation of volatile organic compounds released during wildfires and can lead to increased erosion rate. Such extreme water repellent soil can be classified as superhydrophobic and shares similar chemical and topographical features to specifically designed superhydrophobic surfaces. Previous studies using high speed videography to investigate single droplet impact behaviour on artificial superhydrophobic have revealed three distinct modes of splash behaviour (rebound, pinned and fragmentation) which are dependent on the impact velocity of the droplet. In our studies, using high-speed videography, we show that such splash behaviour can be replicated on fixed 'model' water repellent soils (hydrophobic glass beads/particles). We show that the type of splash behaviour is dependent on both the size and chemical nature of the fixed particles. The particle shape also influences the splash behaviour as shown by drop impact experiments on fixed sand samples. We have also studied soil samples, as collected from the field, which shows that the type of droplet splash behaviour can lead to enhanced soil particle transport.

  15. Orientation and velocity dependence of the nonequilibrium partition coefficient

    Science.gov (United States)

    Beatty, K. M.; Jackson, K. A.

    1995-01-01

    Monte Carlo simulations based on a Spin-1 Ising Model for binary alloys have been used to investigate the non-equilibrium partition coefficient (k(sub neq)) as a function of solid-liquid interface velocity and orientation. In simulations of Si with a second component k(sub neq) is greater in the [111] direction than the [100] direction in agreement with experimental results reported by Azlz et al. The simulated partition coefficient scales with the square of the step velocity divided by the diffusion coefficient of the secondary component in the liquid.

  16. Soil Properties from Low-Velocity Probe Penetration

    Directory of Open Access Journals (Sweden)

    Jerome B. Johnson

    2008-01-01

    Full Text Available A physical model of low-velocity probe penetration is developed to characterize soil by type, strength, maximum compaction, and initial density using Newton's second law to describe the processes controlling probe momentum loss. The probe loses momentum by causing soil failure (strength, accelerating and compacting soil around the probe (inertia, and through frictional sliding at the probe/soil interface (friction. Probe geometry, mass, and impact velocity influences are incorporated into the model. Model predictions of probe deceleration history and depth of penetration agree well with experiments, without the need for free variables or complex numerical simulations.

  17. 单晶蓝宝石的延性研磨加工%Ductile lapping of single crystal sapphire

    Institute of Scientific and Technical Information of China (English)

    戴欣平; 赵萍; 文东辉

    2012-01-01

    To achieve the ductile lapping of a single crystal sapphire, micro/nano mechanic characteristics of the sapphire (0001) plane were measured by nanoindentation and nanoscratch methods. The indentation model of single cone abrasive grain was proposed and then critical force conditions were deduced during ductile lapping process. Experimental studies were conducted for the single crystal sapphire based on the diamond abrasive grain charging into a synthetic tin plate, and characteristics of ductile lapped surface were measured by a NT9800 white light interferometer, a Scan Emission Microscopy (SEM) and a Transmission Electron Microscopy (TEM). Experimental results show that nanoindentation and nanoscratch methods can provide processing parameters for the ductile lapping of single crystal sapphires, and its critical depth of pile-up is around 100 nm for sapphire nanoindenta-tion. The ductile lapping of the single crystal sapphire can be implemented by charging into diamond abrasive grains and selecting proper loads and the optimal load for ductile lapping is 21 kPa. After ductile lapping, the surface scratch depth of single crystal sapphire shows a smaller dispersion and the dislocation and slip are formed on the lapped surface.%为实现单晶蓝宝石的延性研磨加工,采用纳米压痕和划痕法测试并分析了单晶蓝宝石(0001)面的微纳力学特性,建立了单颗圆锥状磨粒的压入模型并计算了延性研磨加工的受力临界条件,分析了金刚石磨粒嵌入合成锡研磨盘表面的效果.对单晶蓝宝石进行了延性研磨加工试验,采用NT9800白光干涉仪、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等方法分析了单晶蓝宝石的延性研磨表面特征.试验结果表明:采用纳米压痕和划痕法可以为单晶蓝宝石的延性研磨加工提供工艺参数,单晶蓝宝石的延性堆积的极限深度为100 nm,金刚石磨粒的嵌入及在适当载荷下可以实现蓝宝石的延性研磨加

  18. Examples of Vector Velocity Imaging

    DEFF Research Database (Denmark)

    Hansen, Peter M.; Pedersen, Mads M.; Hansen, Kristoffer L.

    2011-01-01

    To measure blood flow velocity in vessels with conventional ultrasound, the velocity is estimated along the direction of the emitted ultrasound wave. It is therefore impossible to obtain accurate information on blood flow velocity and direction, when the angle between blood flow and ultrasound wa...... with a 90° angle on the vessel. Moreover secondary flow in the abdominal aorta is illustrated by scanning on the transversal axis....

  19. Entanglement and topological interfaces

    CERN Document Server

    Brehm, Enrico M; Jaud, Daniel; Schmidt-Colinet, Cornelius

    2015-01-01

    In this paper we consider entanglement entropies in two-dimensional conformal field theories in the presence of topological interfaces. Tracing over one side of the interface, the leading term of the entropy remains unchanged. The interface however adds a subleading contribution, which can be interpreted as a relative (Kullback-Leibler) entropy with respect to the situation with no defect inserted. Reinterpreting boundaries as topological interfaces of a chiral half of the full theory, we rederive the left/right entanglement entropy in analogy with the interface case. We discuss WZW models and toroidal bosonic theories as examples.

  20. Quantization of interface currents

    Energy Technology Data Exchange (ETDEWEB)

    Kotani, Motoko [AIMR, Tohoku University, Sendai (Japan); Schulz-Baldes, Hermann [Department Mathematik, Universität Erlangen-Nürnberg, Erlangen (Germany); Villegas-Blas, Carlos [Instituto de Matematicas, Cuernavaca, UNAM, Cuernavaca (Mexico)

    2014-12-15

    At the interface of two two-dimensional quantum systems, there may exist interface currents similar to edge currents in quantum Hall systems. It is proved that these interface currents are macroscopically quantized by an integer that is given by the difference of the Chern numbers of the two systems. It is also argued that at the interface between two time-reversal invariant systems with half-integer spin, one of which is trivial and the other non-trivial, there are dissipationless spin-polarized interface currents.

  1. Interfacing with the WEB

    CERN Document Server

    Dönszelmann, M

    1995-01-01

    Interfacing to the Web or programming interfaces for the Web is used to provide dynamic information for Web users. Using the Web as a transport system of information poses three constraints: namespace, statelessness and performance. To build interfaces on either server or client side of the Web one has to meet these constraints. Several examples, currently in use in High Energy Physics Experiments are described. They range from an interface to show where buildings are located to an interface showing active values of the On-line System of the DELPHI (CERN)..

  2. Introduction to diffuse interfaces and transformation fronts modelling in compressible media

    OpenAIRE

    Saurel Richard; Petitpas Fabien

    2013-01-01

    Computation of interfaces separating compressible materials is related to mixture cells appearance. These mixture cells are consequences of fluid motion and artificial smearing of discontinuities. The correct computation of the entire flow field requires perfect fulfillment of the interface conditions. In the simplest situation of contact interfaces with perfect fluids, these conditions correspond to equal normal velocities and equal pressures. To compute compressible flows with interfac...

  3. A Rigorous Sharp Interface Limit of a Diffuse Interface Model Related to Tumor Growth

    Science.gov (United States)

    Rocca, Elisabetta; Scala, Riccardo

    2017-06-01

    In this paper, we study the rigorous sharp interface limit of a diffuse interface model related to the dynamics of tumor growth, when a parameter ɛ, representing the interface thickness between the tumorous and non-tumorous cells, tends to zero. More in particular, we analyze here a gradient-flow-type model arising from a modification of the recently introduced model for tumor growth dynamics in Hawkins-Daruud et al. (Int J Numer Math Biomed Eng 28:3-24, 2011) (cf. also Hilhorst et al. Math Models Methods Appl Sci 25:1011-1043, 2015). Exploiting the techniques related to both gradient flows and gamma convergence, we recover a condition on the interface Γ relating the chemical and double-well potentials, the mean curvature, and the normal velocity.

  4. Sodium Velocity Maps on Mercury

    Science.gov (United States)

    Potter, A. E.; Killen, R. M.

    2011-01-01

    The objective of the current work was to measure two-dimensional maps of sodium velocities on the Mercury surface and examine the maps for evidence of sources or sinks of sodium on the surface. The McMath-Pierce Solar Telescope and the Stellar Spectrograph were used to measure Mercury spectra that were sampled at 7 milliAngstrom intervals. Observations were made each day during the period October 5-9, 2010. The dawn terminator was in view during that time. The velocity shift of the centroid of the Mercury emission line was measured relative to the solar sodium Fraunhofer line corrected for radial velocity of the Earth. The difference between the observed and calculated velocity shift was taken to be the velocity vector of the sodium relative to Earth. For each position of the spectrograph slit, a line of velocities across the planet was measured. Then, the spectrograph slit was stepped over the surface of Mercury at 1 arc second intervals. The position of Mercury was stabilized by an adaptive optics system. The collection of lines were assembled into an images of surface reflection, sodium emission intensities, and Earthward velocities over the surface of Mercury. The velocity map shows patches of higher velocity in the southern hemisphere, suggesting the existence of sodium sources there. The peak earthward velocity occurs in the equatorial region, and extends to the terminator. Since this was a dawn terminator, this might be an indication of dawn evaporation of sodium. Leblanc et al. (2008) have published a velocity map that is similar.

  5. Influence of shear velocity on frictional characteristics of rock surface

    Indian Academy of Sciences (India)

    T N Singh; A K Verma; Tanmay Kumar; Avi Dutt

    2011-02-01

    Understanding the fundamental issues related with the effect of shear velocity on frictional characteristics at the interface of rock surfaces is an important issue. In this paper, strain-rate dependence on friction is investigated in relation to sliding behaviour under normal load. The phenomenon of stick-slip of granite and shaly sandstone with a tribometer at constant rate of strain under normal loads was observed. Friction at the interface of the rock samples was developed by increasing shear strain at a constant rate by applying constant velocity using the tribometer. For shaly sandstone, state parameters ( and ) played a major role in determining the friction values and roughness of the contact surfaces as well. Higher values of for shaly sandstone may be attributed to the fact that its surface had a greater number of pronounced asperities. Rubbing between the surfaces does not mean that surface becomes smoother. This is because of variation of friction between surfaces.

  6. Electron surface layer at the interface of a plasma and a dielectric wall

    CERN Document Server

    Heinisch, Rafael L; Fehske, Holger

    2011-01-01

    We study the potential and the charge distribution across the interface of a plasma and a dielectric wall. For this purpose, the charge bound to the wall is modelled as a quasi-stationary electron surface layer which satisfies Poisson's equation and minimizes the grand canonical potential of the wall-thermalized excess electrons constituting the wall charge. Based on an effective model for a graded interface taking into account the image potential and the offset of the conduction band to the potential just outside the dielectric, we specifically calculate the potential and the electron distribution for magnesium oxide, silicon dioxide and sapphire surfaces in contact with a helium discharge. Depending on the electron affinity of the surface, we find two vastly different behaviors. For negative electron affinity, electrons do not penetrate into the wall and an external surface charge is formed in the image potential, while for positive electron affinity, electrons penetrate into the wall and a space charge lay...

  7. Introduction to vector velocity imaging

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt; Udesen, Jesper; Hansen, Kristoffer Lindskov;

    Current ultrasound scanners can only estimate the velocity along the ultrasound beam and this gives rise to the cos() factor on all velocity estimates. This is a major limitation as most vessels are close to perpendicular to the beam. Also the angle varies as a function of space and time making...

  8. Instantaneous Velocity Using Photogate Timers

    Science.gov (United States)

    Wolbeck, John

    2010-01-01

    Photogate timers are commonly used in physics laboratories to determine the velocity of a passing object. In this application a card attached to a moving object breaks the beam of the photogate timer providing the time for the card to pass. The length L of the passing card can then be divided by this time to yield the average velocity (or speed)…

  9. Kriging Interpolating Cosmic Velocity Field

    CERN Document Server

    Yu, Yu; Jing, Yipeng; Zhang, Pengjie

    2015-01-01

    [abridge] Volume-weighted statistics of large scale peculiar velocity is preferred by peculiar velocity cosmology, since it is free of uncertainties of galaxy density bias entangled in mass-weighted statistics. However, measuring the volume-weighted velocity statistics from galaxy (halo/simulation particle) velocity data is challenging. For the first time, we apply the Kriging interpolation to obtain the volume-weighted velocity field. Kriging is a minimum variance estimator. It predicts the most likely velocity for each place based on the velocity at other places. We test the performance of Kriging quantified by the E-mode velocity power spectrum from simulations. Dependences on the variogram prior used in Kriging, the number $n_k$ of the nearby particles to interpolate and the density $n_P$ of the observed sample are investigated. (1) We find that Kriging induces $1\\%$ and $3\\%$ systematics at $k\\sim 0.1h{\\rm Mpc}^{-1}$ when $n_P\\sim 6\\times 10^{-2} ({\\rm Mpc}/h)^{-3}$ and $n_P\\sim 6\\times 10^{-3} ({\\rm Mpc...

  10. Stability and Phase Noise Tests of Two Cryo-Cooled Sapphire Oscillators

    Science.gov (United States)

    Dick, G. John; Wang, Rabi T.

    1998-01-01

    A cryocooled Compensated Sapphire Oscillator (CSO), developed for the Cassini Ka-band Radio Science experiment, and operating in the 8K - 10K temperature range was previously demonstrated to show ultra-high stability of sigma(sub y) = 2.5 x 10 (exp -15) for measuring times 200 seconds less than or equal to tau less than or equal to 600 seconds using a hydrogen maser as reference. We present here test results for a second unit which allows CSO short-term stability and phase noise to be measured for the first time. Also included are design details of a new RF receiver and an intercomparison with the first CSO unit. Cryogenic oscillators operating below about 10K offer the highest possible short term stability of any frequency sources. However, their use has so far been restricted to research environments due to the limited operating periods associated with liquid helium consumption. The cryocooled CSO is being built in support of the Cassini Ka-band Radio Science experiment and is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3-4 x 10 (exp -15) (1 second less than or equal to tau less than or equal to 100 seconds) and phase noise of -73dB/Hz @ 1Hz measured at 34 GHz. Installation in 5 stations of NASA's deep space network (DSN) is planned in the years 2000 - 2002. In the previous tests, actual stability of the CSO for measuring times tau less than or equal to 200 seconds could not be directly measured, being masked by short-term fluctuations of the H-maser reference. Excellent short-term performance, however, could be inferred by the success of an application of the CSO as local oscillator (L.O.) to the JPL LITS passive atomic standard, where medium-term stability showed no degradation due to L.O. instabilities at a level of (sigma)y = 3 x 10 (exp -14)/square root of tau. A second CSO has now been constructed, and all cryogenic aspects have been verified, including a resonator turn-over temperature of 7.907 K

  11. Weight of Production of Emeralds, Rubies, Sapphires, and Tanzanite from 1995 Through 2005

    Science.gov (United States)

    Yager, Thomas R.; Menzie, W. David; Olson, Donald W.

    2008-01-01

    U.S. Geological Survey (USGS) historically has not attempted to report comprehensive world production of gemstones on a country basis. This was because estimation of gemstone production is inherently difficult due to the fragmentary nature of the industry, the lack of governmental oversight or reporting in many countries where colored gemstones are mined, and the wide variation in quality between individual gemstones. Unlike diamonds, which, with the exception of the alluvial stones of West Africa, are mainly produced by large international mining companies and evaluated, cut, and marketed through a highly developed pricing structure and complex commercial arrangements, colored gemstones are mainly mined by individuals or small companies and have less developed evaluation and marketing arrangements. The trading centers for colored gems are smaller and less well known than the diamond centers. Colored gemstones, like alluvial diamonds, have the potential to be used to fund civil conflicts and other illegal activities, and because trade in colored gemstones is less organized than that of diamonds, they offer less opportunity for effective regulation of their trade. And, like diamond, until the recent advent of the Kimberley Process no generally accepted estimates of colored gemstone production globally or by producing country have existed. The present paper is a first attempt to develop production statistics for the three precious gems -emeralds, rubies, and sapphires - and tanzanite tanzanite, a semi-precious gem. The data consist of the weight of production of each of the gemstones from 1995 through 2005. Preliminary data on the weights of gemstone production were presented as a poster session at the Gemological Institute of America's Gemological Research Conference in San Diego, CA, in 2006, and as a published abstract (Yager, 2006) in an attempt to gather response to the estimates. The USGS continues to welcome information and suggestions that would improve the

  12. Sound Velocity and Release Behaviour of Shock-Compressed LY12 Al

    Institute of Scientific and Technical Information of China (English)

    YU Yu-Ying; TAN Hua; DAI Cheng-Da; HU Jian-Bo; CHEN Da-Nian

    2005-01-01

    @@ A velocity interferometer system for any reflector (VISAR) is used to measure the sound velocity of LY12 Al shock-compressed to peak pressures of 20, 32, 55 and 71 GPa. Unloading wave velocities from these pressures are obtained from the observed particle velocity profiles at the LY12 Al/LiF window interface; and the longitudinal,bulk and shear sound velocities at the initial Hugoniot state are well determined. The histories of stress, strain,density or volume, and particle velocity along the release paths are calculated by the impedance-matching method based on the unloading sound velocity data. It is revealed that the release behaviour of shocked LY12 Al departures obviously from the elastic perfectly-plastic response.

  13. Hydrodynamical entrapment of ciliates at the air-liquid interface

    Science.gov (United States)

    Ferracci, Jonathan; Ueno, Hironori; Numayama-Tsuruta, Keiko; Imai, Yohsuke; Yamaguchi, Takami; Ishikawa, Takuji

    2012-11-01

    We found the new phenomenon of the entrapment of ciliates at the air-water interface, though they are not trapped by a solid interface. We first characterize the behaviours of cells at the interface by comparing it to those away from interfaces. The results showed that the cell's swimming velocity is considerably reduced at the air-water interface. In order to experimentally verify the possible physiological causes of the entrapment, we observed their behaviours in absence of positive chemotaxis for oxygen and the negative geotaxis. The results illustrated that the entrapment phenomenon was not dependent on these physiological conditions. The experiments using surfactant revealed that the entrapment phenomenon was strongly affected by the velocity-stress conditions at the interface. This fact was confirmed numerically by a boundary element method, i.e. the stress-free condition at the air-liquid interface is one of the main mechanisms of the entrapment phenomenon found in the experiments. Since the entrapment phenomenon found in this study affects the cell-cell interactions and the mass transport at the interface, the knowledge obtained in this study is useful for better understanding the complex behaviours of swimming microorganisms in nature. PhD student in the Physiological Flow Studies Laboratory.

  14. Structural, morphological and optical properties of Cd doped ZnO film grown on a- and r-plane sapphire substrate by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Fouzri, A., E-mail: Fouzri.Afif@gmail.com [Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche, High resolution X-ray diffractometer, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Boukadhaba, M.A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche, High resolution X-ray diffractometer, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Touré, A. [Unité de recherche hétéroepitaxie et ses applications, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Sakly, N. [Laboratoire Physico-chimie des Interfaces, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); and others

    2014-08-30

    Highlights: • Cd doped ZnO films have been grown on (1 1 −20) (a-plane) and (0 1 −1 2) (r-plane) sapphire substrate by MOCVD. • A maximum cadmium incorporation of 8.5% and 11.2% has been, respectively, determined for films deposited on a- and r-plane sapphire. • XRD study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0 0 0 1] and a-plane (1 1 −2 0) film are epitaxially grown on r-plane-sapphire. • The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at low temperature (20 K). - Abstract: Cd doped ZnO films have been grown on (1 1 −2 0) (a-plane) and (0 1 −1 2) (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been, respectively, determined for films deposited on a- and r-plane sapphire. The optical transmission spectra and energy band-gap equation established by Makino et al. were used to estimate the cadmium mole fraction in layer. Structural, morphological and optical properties of these films were examined using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and room and low temperature photoluminescence (Pl) as Cd incorporation and employed substrate. X-ray diffraction study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0 0 0 1] direction and a-plane (1 1 −2 0) film are epitaxially grown on r-plane sapphire. AFM image show significant differences between morphologies depending on orientation sapphire substrate but no significant differences on surface roughness have been found. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at

  15. Diffraction imaging and velocity analysis using oriented velocity continuation

    KAUST Repository

    Decker, Luke

    2014-08-05

    We perform seismic diffraction imaging and velocity analysis by separating diffractions from specular reflections and decomposing them into slope components. We image slope components using extrapolation in migration velocity in time-space-slope coordinates. The extrapolation is described by a convection-type partial differential equation and implemented efficiently in the Fourier domain. Synthetic and field data experiments show that the proposed algorithm is able to detect accurate time-migration velocities by automatically measuring the flatness of events in dip-angle gathers.

  16. The Interface Conditions for Pressures at Oil-water Flood Front in the Porous Media Considering Capillary Pressure

    CERN Document Server

    Peng, Xiaolong; Du, Zhimin

    2016-01-01

    Flood front is the jump interface where fluids distribute discontinuously, whose interface condition is the theoretical basis of a mathematical model of the multiphase flow in porous medium. The conventional interface condition at the jump interface is expressed as the continuous Darcy velocity and fluid pressure (named CPVCM). This paper has inspected it via the studying the water-oil displacement in one dimensional reservoir with considering capillary pressure but ignoring the compressibility and gravity. It is proved theoretically that the total Darcy velocity and total pressure (defined by Antoncev etc.), instead of the Darcy velocities and pressures of water and oil, are continuous at the flood front without considering the compressibility of fluid and porous media. After that, new interface conditions for the pressures and Darcy velocity of each fluid are established, which are collectively named as Jump Pressures and Velocities Conditions Model (JPVCM) because the model has shown the jump pressures and...

  17. The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate.

    Science.gov (United States)

    Chang, Chun-Ming; Shiao, Ming-Hua; Yang, Chin-Tien; Cheng, Chung-Ta; Hsueh, Wen-Jeng

    2014-10-01

    In this study, patterned sapphire substrates are fabricated using nanosphere lithography (NSL) and inductively-coupled-plasma reactive ion etching (ICP-RIE). Polystyrene nanospheres of approximately 600 nm diameter are self-assembled on c-plane sapphire substrates by spin-coating. The diameter of the polystyrene nanospheres is modified to adjust the etching mask pitch cycle using oxygen plasma in the ICP-RIE system. A nickel thin film mask of 100 nm thickness is deposited by electron-beam evaporation on a substrate covered with treated nanospheres. The sapphire substrate is then etched in an inductively coupled plasma system using BCl3/Ar gas, to fabricate a structure with a periodic sub-micron hole array with different sidewall intervals. The DC bias voltage, the sapphire etching rate, the surface roughness, are studied as a function of the ICP and the RF power. Different sub-micron hole arrays with spacing cycles of 89 nm, 139 nm and 167 nm are successfully fabricated on the sapphire substrate, using suitable etching parameters.

  18. Linear flow dynamics near a T/NT interface

    Science.gov (United States)

    Teixeira, Miguel; Silva, Carlos

    2011-11-01

    The characteristics of a suddenly-inserted T/NT interface separating a homogeneous and isotropic shear-free turbulence region from a non-turbulent flow region are investigated using rapid distortion theory (RDT), taking full account of viscous effects. Profiles of the velocity variances, TKE, viscous dissipation rate, turbulence length scales, and pressure statistics are derived, showing very good agreement with DNS. The normalized inviscid flow statistics at the T/NT interface do not depend on the form of the assumed TKE spectrum. In the non-turbulent region, where the flow is irrotational (except within a thin viscous boundary layer), the dissipation rate decays as z-6, where z is distance from the T/NT interface. The mean pressure exhibits a decrease towards the turbulence due to the associated velocity fluctuations, consistent with the generation of a mean entrainment velocity. The vorticity variance and dissipation rate display large maxima at the T/NT interface due to the existing inviscid discontinuities of the tangential velocity, and these maxima are quantitatively related to the thickness of the viscous boundary layer (VBL). At equilibrium, RDT suggests that the thickness of the T/NT interface scales on the Kolmogorov microscale. We acknowledge the financial support of FCT under Project PTDC/EME-MFE/099636/2008.

  19. Anisotropic diffusion of volatile pollutants at air-water interface

    Institute of Scientific and Technical Information of China (English)

    Li-ping CHEN; Jing-tao CHENG; Guang-fa DENG

    2013-01-01

    The volatile pollutants that spill into natural waters cause water pollution. Air pollution arises from the water pollution because of volatilization. Mass exchange caused by turbulent fluctuation is stronger in the direction normal to the air-water interface than in other directions due to the large density difference between water and air. In order to explore the characteristics of anisotropic diffusion of the volatile pollutants at the air-water interface, the relationship between velocity gradient and mass transfer rate was established to calculate the turbulent mass diffusivity. A second-order accurate smooth transition differencing scheme (STDS) was proposed to guarantee the boundedness for the flow and mass transfer at the air-water interface. Simulations and experiments were performed to study the trichloroethylene (C2HCl3) release. By comparing the anisotropic coupling diffusion model, isotropic coupling diffusion model, and non-coupling diffusion model, the features of the transport of volatile pollutants at the air-water interface were determined. The results show that the anisotropic coupling diffusion model is more accurate than the isotropic coupling diffusion model and non-coupling diffusion model. Mass transfer significantly increases with the increase of the air-water relative velocity at a low relative velocity. However, at a higher relative velocity, an increase in the relative velocity has no effect on mass transfer.

  20. Anisotropic diffusion of volatile pollutants at air-water interface

    Directory of Open Access Journals (Sweden)

    Li-ping CHEN

    2013-04-01

    Full Text Available The volatile pollutants that spill into natural waters cause water pollution. Air pollution arises from the water pollution because of volatilization. Mass exchange caused by turbulent fluctuation is stronger in the direction normal to the air-water interface than in other directions due to the large density difference between water and air. In order to explore the characteristics of anisotropic diffusion of the volatile pollutants at the air-water interface, the relationship between velocity gradient and mass transfer rate was established to calculate the turbulent mass diffusivity. A second-order accurate smooth transition differencing scheme (STDS was proposed to guarantee the boundedness for the flow and mass transfer at the air-water interface. Simulations and experiments were performed to study the trichloroethylene (C2HCl3 release. By comparing the anisotropic coupling diffusion model, isotropic coupling diffusion model, and non-coupling diffusion model, the features of the transport of volatile pollutants at the air-water interface were determined. The results show that the anisotropic coupling diffusion model is more accurate than the isotropic coupling diffusion model and non-coupling diffusion model. Mass transfer significantly increases with the increase of the air-water relative velocity at a low relative velocity. However, at a higher relative velocity, an increase in the relative velocity has no effect on mass transfer.

  1. Refinement by interface instantiation

    DEFF Research Database (Denmark)

    Hallerstede, Stefan; Hoang, Thai Son

    2012-01-01

    be easily refined. Our first contribution hence is a proposal for a new construct called interface that encapsulates the external variables, along with a mechanism for interface instantiation. Using the new construct and mechanism, external variables can be refined consistently. Our second contribution...... is an approach for verifying the correctness of Event-B extensions using the supporting Rodin tool. We illustrate our approach by proving the correctness of interface instantiation....

  2. Popeye Project: ROV interface

    Energy Technology Data Exchange (ETDEWEB)

    Scates, C.R.; Hernandez, D.A.; Hickok, D.D.

    1996-12-31

    This paper discusses the Remote Operated Vehicle (ROV) interface with the Popeye Project Subsea System. It describes the ROV-related plans, design philosophies, intervention tasks, tooling/equipment requirements, testing activities, and offshore installation experiences. Early identification and continuous consideration of the ROV interfaces significantly improved the overall efficiency of equipment designs and offshore operations. The Popeye Project helped advance the technology and standardization of ROV interfaces for deep water subsea production systems.

  3. Turbomachine Interface Sealing

    Science.gov (United States)

    Hendricks, Robert C.; Chupp, Raymond E.; Lattime, Scott B.; Steinetz, Bruce M.

    2005-01-01

    Sealing interfaces and coatings, like lubricants, are sacrificial, giving up their integrity for the benefit of the component. Clearance control is a major issue in power systems turbomachine design and operational life. Sealing becomes the most cost-effective way to enhance system performance. Coatings, films, and combined use of both metals and ceramics play a major role in maintaining interface clearances in turbomachine sealing and component life. This paper focuses on conventional and innovative materials and design practices for sealing interfaces.

  4. Universal computer interfaces

    CERN Document Server

    Dheere, RFBM

    1988-01-01

    Presents a survey of the latest developments in the field of the universal computer interface, resulting from a study of the world patent literature. Illustrating the state of the art today, the book ranges from basic interface structure, through parameters and common characteristics, to the most important industrial bus realizations. Recent technical enhancements are also included, with special emphasis devoted to the universal interface adapter circuit. Comprehensively indexed.

  5. High Velocity Droplet Rebound On Liquid Pools

    Science.gov (United States)

    Doak, William; Laiacona, Danielle; Chiarot, Paul; German, Guy

    2015-11-01

    Rebound of high velocity, periodic droplet streams off viscous liquid pools is studied experimentally. Droplets, approximately 60 micrometers in diameter, impact the oil surface at velocities up to 13 m/s and at angles between 2-25 degrees. The oil surface does not degrade or lose its ability to provide rebound even after millions of droplet impacts. The oil was varied to examine the effect that surface tension and viscosity had on droplet rebound. Stable rebound is achievable on oils varying in dynamic viscosity in the range 13-970 Pa.s and surface tensions in the range 19-28 mN/m. When rebound occurs, a consistent 29% loss of droplet kinetic energy is observed. This is a surprising relationship due to the fact that it holds true for all cases of stable rebound regardless of the oil used. We further observe an upper inertial limit where droplets no longer provide stable rebound and instead become fully entrained in the oil pool. This limit is governed by the Rayleigh-Plateau instability and can be characterized and predicted using a modified version of the Weber number. The droplet rebound presented in this study is unique due to the size, velocity, and frequency of the droplets used. Another unique feature is that the rebound manifests itself as an effectively static phenomenon. No motion of the interface - oscillations, waves, or otherwise - was observed during rebound. The quasi-static nature of rebound enabled distinctions to be made regarding energy dissipation and the transition from droplet rebound to entrainment.

  6. Electromagnetic Interface Testing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Electromagnetic Interface Testing facilitysupports such testing asEmissions, Field Strength, Mode Stirring, EMP Pulser, 4 Probe Monitoring/Leveling System, and...

  7. Shape-changing interfaces:

    DEFF Research Database (Denmark)

    Rasmussen, Majken Kirkegård; Pedersen, Esben Warming; Petersen, Marianne Graves;

    2015-01-01

    these shortcomings. We identify eight types of shape that are transformed in various ways to serve both functional and hedonic design purposes. Interaction with shape-changing interfaces is simple and rarely merges input and output. Three questions are discussed based on the review: (a) which design purposes may......Shape change is increasingly used in physical user interfaces, both as input and output. Yet, the progress made and the key research questions for shape-changing interfaces are rarely analyzed systematically. We review a sample of existing work on shape-changing interfaces to address...

  8. Shape-changing interfaces:

    DEFF Research Database (Denmark)

    Rasmussen, Majken Kirkegård; Pedersen, Esben Warming; Petersen, Marianne Graves

    2015-01-01

    Shape change is increasingly used in physical user interfaces, both as input and output. Yet, the progress made and the key research questions for shape-changing interfaces are rarely analyzed systematically. We review a sample of existing work on shape-changing interfaces to address these shortc...... shape-changing interfaces be used for, (b) which parts of the design space are not well understood, and (c) why studying user experience with shape-changing interfaces is important.......Shape change is increasingly used in physical user interfaces, both as input and output. Yet, the progress made and the key research questions for shape-changing interfaces are rarely analyzed systematically. We review a sample of existing work on shape-changing interfaces to address...... these shortcomings. We identify eight types of shape that are transformed in various ways to serve both functional and hedonic design purposes. Interaction with shape-changing interfaces is simple and rarely merges input and output. Three questions are discussed based on the review: (a) which design purposes may...

  9. Interfaces Between Second Interfaces Between Second

    Directory of Open Access Journals (Sweden)

    Celso Henrique Soufen Tumolo

    2008-04-01

    Full Text Available The book Interfaces Between Second Language Acquisition and Language Testing Research was edited with the concern of bringing together various researchers who have tried to overcome the separation of the two areas, SLA and LT, by raising and discussing relevant issues related to both. The book Interfaces Between Second Language Acquisition and Language Testing Research was edited with the concern of bringing together various researchers who have tried to overcome the separation of the two areas, SLA and LT, by raising and discussing relevant issues related to both.

  10. Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate.

    Science.gov (United States)

    Wu, YewChung Sermon; Isabel, A Panimaya Selvi; Zheng, Jian-Hsuan; Lin, Bo-Wen; Li, Jhen-Hong; Lin, Chia-Chen

    2015-04-22

    The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

  11. Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs.

    Science.gov (United States)

    Kuo, Chien-Ting; Hsu, Lung-Hsing; Huang, Bo-Hsin; Kuo, Hao-Chung; Lin, Chien-Chung; Cheng, Yuh-Jen

    2016-09-10

    The influence of the microstructure geometry of patterned sapphire substrates (PSS) on the light extraction efficiency (LEE) of GaN light-emitting diodes (LEDs) is numerically analyzed. Cone structures of various dimensions are studied, along with dome and mixed microstructures. LEE is found to mainly depend on the microstructure surface slope. LEE rises quickly with slope and flattens out when the slope exceeds 0.6. Scaling down the microstructure has little effect on LEE. Light rays are found to travel longer distances in PSS LEDs, as compared with LEDs grown on a flat substrate. Keeping GaN absorption loss low is important for LEE optimization.

  12. High-efficiency multipass Ti:sapphire amplifiers for a continuous-wave single-mode laser.

    Science.gov (United States)

    Georges, P; Estable, F; Salin, F; Poizat, J P; Grangier, P; Brun, A

    1991-02-01

    We present the amplification of a continuous-wave single-mode ring dye laser in Ti:sapphire. A peak gain of 2 x 10(6) has been obtained in a passive multipass amplifier, which yielded 20-nsec pulses of 0.7-mJ energy at 780 nm. We discuss the advantages of this passive multipass amplifier in comparison with a regenerative amplifier that we have also developed. By second-harmonic generation we obtained high-peak-power UV pulses from the amplified single-mode laser.

  13. A first-principles study on Al-doped ZnO growth polarity on sapphire (0001) surface

    Science.gov (United States)

    Yang, Ping; Gao, Qian; Hu, Zhen-Peng; Zhang, Li-Xin

    2016-06-01

    Based on the first-principles method, the polarity inversion mechanism of Al-doped ZnO grown on sapphire (0001) substrate was investigated. This study revealed that the Al dopant tends to float on the surface of the buffer layer and leads to form ZnO nucleation islands of Zn-polarity without changing in-plane orientation. Finally, these islands evolve to wall-like nanostructure with Zn-termination. The results can explain the reason of the polarity inversion phenomenon in the experiment and supply more information for controlling the ZnO growth polarity.

  14. Tunable, continuous-wave Ti:sapphire channel waveguide lasers written by femtosecond and picosecond laser pulses.

    Science.gov (United States)

    Grivas, Christos; Corbari, Costantino; Brambilla, Gilberto; Lagoudakis, Pavlos G

    2012-11-15

    Fabrication and cw lasing at 798.25 nm is reported for femtosecond (fs) and picosecond (ps) laser-inscribed channel waveguides in Ti:sapphire crystals. Lasing in channels written by fs (ps) pulses was obtained above a threshold of 84 mW (189 mW) with a maximum output power and a slope efficiency of 143 mW (45 mW) and 23.5% (7.1%), respectively. The emission wavelength was tuned over a 170 nm range by using a birefringent filter in an external cavity.

  15. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power

    OpenAIRE

    Gürel, Kutan; Wittwer, Valentin J; Hoffmann, Martin; Saraceno, Clara J.; Hakobyan, Sargis; Resan, B; Rohrbacher, A; Weingarten, K.; Schilt, Stéphane; Südmeyer, Thomas

    2015-01-01

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieve...

  16. Measurement of nonlinear optical refraction of composite material based on sapphire with silver by Kerr-lens autocorrelation method.

    Science.gov (United States)

    Yu, Xiang-xiang; Wang, Yu-hua

    2014-01-13

    Silver nanoparticles synthesized in a synthetic sapphire matrix were fabricated by ion implantation using the metal vapor vacuum arc ion source. The optical absorption spectrum of the Ag: Al2O3 composite material has been measured. The analysis of the supercontinuum spectrum displayed the nonlinear refractive property of this kind of sample. Nonlinear optical refraction index was identified at 800 nm excitation using the Kerr-lens autocorrelation (KLAC) technique. The spectrum showed that the material possessed self-defocusing property (n(2) = -1.1 × 10(-15) cm(2)W). The mechanism of nonlinear refraction has been discussed.

  17. A self-tunable Titanium Sapphire laser by rotating a set of parallel plates of active material.

    Science.gov (United States)

    Iparraguirre, Ignacio; Azkargorta, Jon; Fernandez, Joaquín; Balda, Rolindes; Del Río Gaztelurrutia, Teresa; Illarramendi, M Asunción; Aramburu, Ibon

    2009-03-02

    In a recent work, the authors reported the experimental demonstration of wavelength tuning in a single birefringent plate of Ti:sapphire crystal based on its own birefringence properties. In that device, the thickness of the active plate, limited by the width of the single order tuning spectral region, imposed a strong constraint in the power performance of the laser. The aim of this work is to overcome this limitation by using a set of several identical birefringent plates so that the wavelength tuning of the laser is obtained by synchronously rotating the plates in their own plane. A discussion about the laser performance is presented.

  18. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

    Institute of Scientific and Technical Information of China (English)

    XIE Xin-Jian; CHEN Jia-Rong; CAO Xian-Cun; ZHONG Fei; QIU Kai; LIU Gui-Feng; YIN Zhi-Jun; WANG Yu-Qi; LI Xin-Hua; JI Chang-Jian; HAN Qi-Fen

    2006-01-01

    We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of about 1μm was initially grown on a (0001) sapphire substrate by molecular beam epitaxy. Then it was dealt by putting, into 45% NaOH solution at 100°C for Wmin. By this process a quasi-porous GaN Rim was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050°C in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.

  19. Evidence of colour-modification induced charge and structural disorder in natural corundum: Spectroscopic studies of beryllium treated sapphires and rubies

    Science.gov (United States)

    Sastry, M. D.; Mane, Sandesh N.; Gaonkar, Mahesh P.; Bagla, H.; Panjikar, J.; Ramachandran, K. T.

    2009-07-01

    Corundum α - Al2O3 single crystals is an important gemstone known by different names depending on the colour it exhibits which in turn depends on the impurities that are present. The colour depends on the valence state of the impurity element present in corundum (Cr3+ in ruby, Fe3+ in yellow sapphire and Fe-Ti complex in blue sapphire). There have been a number of reports of diffusion controlled high temperature chemical reactions to influence the colouration in these materials. Present paper deals with the Raman and FT-IR results on Be treated rubies/sapphires and gives evidence of the disorder brought about by such treatments. This can be effectively used for diagnostic purposes for detecting the treated stones.

  20. Evidence of colour-modification induced charge and structural disorder in natural corundum: Spectroscopic studies of beryllium treated sapphires and rubies

    Energy Technology Data Exchange (ETDEWEB)

    Sastry, M D; Mane, Sandesh N; Gaonkar, Mahesh P; Panjikar, J; Ramachandran, K T [Gemmological Institute of India, 304 Sukhsagar Building, N.S.Patkar Marg, Opera House, Mumbai 400 007 (India); Bagla, H, E-mail: mdsastry@yahoo.co.in [Department of Chemistry, KC College, Church gate, Mumbai 400 020 (India)

    2009-07-15

    Corundum {alpha} - Al{sub 2}O{sub 3} single crystals is an important gemstone known by different names depending on the colour it exhibits which in turn depends on the impurities that are present. The colour depends on the valence state of the impurity element present in corundum (Cr{sup 3+} in ruby, Fe{sup 3+} in yellow sapphire and Fe-Ti complex in blue sapphire). There have been a number of reports of diffusion controlled high temperature chemical reactions to influence the colouration in these materials. Present paper deals with the Raman and FT-IR results on Be treated rubies/sapphires and gives evidence of the disorder brought about by such treatments. This can be effectively used for diagnostic purposes for detecting the treated stones.

  1. Proposal for a New Test of the Time Independence Of The Fine Structure Constant, alpha, Using Orthogonally Polarised Whispering Gallery Modes in a Single Sapphire Resonator

    CERN Document Server

    Tobar, M E; Tobar, Michael Edmund; Hartnett, John Gideon

    2003-01-01

    A new experiment to test for the time independence of the fine structure constant, alpha, is proposed. The experiment utilizes orthogonally polarized Transverse Electric and Transverse Magnetic Whispering Gallery Modes in a single sapphire resonator tuned to similar frequencies. When configured as a dual mode sapphire clock, we show that the anisotropy of sapphire makes it is possible to undertake a sensitive measurement from the beat frequency between the two modes. At infrared frequencies this is possible due to the different effect of the lowest phonon frequency on the two orthogonally polarized modes. At microwave frequencies we show that the phonon effect is too small. We show that the Electron Spin Resonance of paramagnetic impurities (such as Cr3+) in the lattice effects only one polarization with an alpha^6 dependence. This enables an enhancement of the sensitivity to temporal changes in a at microwave frequencies.

  2. Neutrino Velocity and Neutrino Oscillations

    CERN Document Server

    Minakata, H

    2012-01-01

    We study distances of propagation and the group velocities of the muon neutrinos in the presence of mixing and oscillations assuming that Lorentz invariance holds. Oscillations lead to distortion of the $\

  3. Statistics of Centroids of Velocity

    CERN Document Server

    Esquivel, A

    2009-01-01

    We review the use of velocity centroids statistics to recover information of interstellar turbulence from observations. Velocity centroids have been used for a long time now to retrieve information about the scaling properties of the turbulent velocity field in the interstellar medium. We show that, while they are useful to study subsonic turbulence, they do not trace the statistics of velocity in supersonic turbulence, because they are highly influenced by fluctuations of density. We show also that for sub-Alfv\\'enic turbulence (both supersonic and subsonic) two-point statistics (e.g. correlation functions or power-spectra) are anisotropic. This anisotropy can be used to determine the direction of the mean magnetic field projected in the plane of the sky.

  4. Kriging interpolating cosmic velocity field

    Science.gov (United States)

    Yu, Yu; Zhang, Jun; Jing, Yipeng; Zhang, Pengjie

    2015-10-01

    Volume-weighted statistics of large-scale peculiar velocity is preferred by peculiar velocity cosmology, since it is free of the uncertainties of galaxy density bias entangled in observed number density-weighted statistics. However, measuring the volume-weighted velocity statistics from galaxy (halo/simulation particle) velocity data is challenging. Therefore, the exploration of velocity assignment methods with well-controlled sampling artifacts is of great importance. For the first time, we apply the Kriging interpolation to obtain the volume-weighted velocity field. Kriging is a minimum variance estimator. It predicts the most likely velocity for each place based on the velocity at other places. We test the performance of Kriging quantified by the E-mode velocity power spectrum from simulations. Dependences on the variogram prior used in Kriging, the number nk of the nearby particles to interpolate, and the density nP of the observed sample are investigated. First, we find that Kriging induces 1% and 3% systematics at k ˜0.1 h Mpc-1 when nP˜6 ×1 0-2(h-1 Mpc )-3 and nP˜6 ×1 0-3(h-1 Mpc )-3 , respectively. The deviation increases for decreasing nP and increasing k . When nP≲6 ×1 0-4(h-1 Mpc )-3 , a smoothing effect dominates small scales, causing significant underestimation of the velocity power spectrum. Second, increasing nk helps to recover small-scale power. However, for nP≲6 ×1 0-4(h-1 Mpc )-3 cases, the recovery is limited. Finally, Kriging is more sensitive to the variogram prior for a lower sample density. The most straightforward application of Kriging on the cosmic velocity field does not show obvious advantages over the nearest-particle method [Y. Zheng, P. Zhang, Y. Jing, W. Lin, and J. Pan, Phys. Rev. D 88, 103510 (2013)] and could not be directly applied to cosmology so far. However, whether potential improvements may be achieved by more delicate versions of Kriging is worth further investigation.

  5. Interface or Interlace?

    DEFF Research Database (Denmark)

    Hansen, Lone Koefoed; Wamberg, Jacob

    2005-01-01

    Departing from an analysis of the computer's indeterminate location between medium and machine, this paper problematises the idea of a clear-cut interface in complex computing, especially Augmented Reality. The idea and pratice of the interface is derived from the medium as a representational...

  6. Verden som interface

    DEFF Research Database (Denmark)

    2007-01-01

    Oversættelse af Peter Weibels tekst "The World as Interface" i Passepartout # 27. Interfacekulturens æstetik. Udgivelsesdato: 28.04.07......Oversættelse af Peter Weibels tekst "The World as Interface" i Passepartout # 27. Interfacekulturens æstetik. Udgivelsesdato: 28.04.07...

  7. Interfaces in nanoscale photovoltaics

    NARCIS (Netherlands)

    Öner, S.Z.

    2016-01-01

    This thesis deals with material interfaces in nanoscale photovoltaics. Interface properties between the absorbing semiconductor and other employed materials are crucial for an efficient solar cell. While the optical properties are largely unaffected by a few nanometer thin layer, the electronic prop

  8. Interfaces in nanoscale photovoltaics

    NARCIS (Netherlands)

    Öner, S.Z.

    2016-01-01

    This thesis deals with material interfaces in nanoscale photovoltaics. Interface properties between the absorbing semiconductor and other employed materials are crucial for an efficient solar cell. While the optical properties are largely unaffected by a few nanometer thin layer, the electronic prop

  9. The User Interface.

    Science.gov (United States)

    Lindeman, Martha J.; And Others

    1989-01-01

    The first of three articles on the design of user interfaces for information retrieval systems discusses the need to examine types of display, prompting, and input as separate entities. The second examines the use of artificial intelligence in creating natural language interfaces, and the third outlines standards for case studies in human computer…

  10. Designing the Instructional Interface.

    Science.gov (United States)

    Lohr, L. L.

    2000-01-01

    Designing the instructional interface is a challenging endeavor requiring knowledge and skills in instructional and visual design, psychology, human-factors, ergonomic research, computer science, and editorial design. This paper describes the instructional interface, the challenges of its development, and an instructional systems approach to its…

  11. Event Detection by Velocity Pyramid

    OpenAIRE

    2014-01-01

    In this paper, we propose velocity pyramid for multimediaevent detection. Recently, spatial pyramid matching is proposed to in-troduce coarse geometric information into Bag of Features framework,and is eective for static image recognition and detection. In video, notonly spatial information but also temporal information, which repre-sents its dynamic nature, is important. In order to fully utilize it, wepropose velocity pyramid where video frames are divided into motionalsub-regions. Our meth...

  12. Entanglement and topological interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Brehm, E.; Brunner, I.; Jaud, D.; Schmidt-Colinet, C. [Arnold Sommerfeld Center, Ludwig-Maximilians-Universitaet, Theresienstrasse 37, 80333, Muenchen (Germany)

    2016-06-15

    In this paper we consider entanglement entropies in two-dimensional conformal field theories in the presence of topological interfaces. Tracing over one side of the interface, the leading term of the entropy remains unchanged. The interface however adds a subleading contribution, which can be interpreted as a relative (Kullback-Leibler) entropy with respect to the situation with no defect inserted. Reinterpreting boundaries as topological interfaces of a chiral half of the full theory, we rederive the left/right entanglement entropy in analogy with the interface case. We discuss WZW models and toroidal bosonic theories as examples. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. User Interface History

    DEFF Research Database (Denmark)

    Jørgensen, Anker Helms; Myers, Brad A

    2008-01-01

    User Interfaces have been around as long as computers have existed, even well before the field of Human-Computer Interaction was established. Over the years, some papers on the history of Human-Computer Interaction and User Interfaces have appeared, primarily focusing on the graphical interface era...... and early visionaries such as Bush, Engelbart and Kay. With the User Interface being a decisive factor in the proliferation of computers in society and since it has become a cultural phenomenon, it is time to paint a more comprehensive picture of its history. This SIG will investigate the possibilities...... of  launching a concerted effort towards creating a History of User Interfaces. ...

  14. Discrimination of the Active Scattering Interfaces

    Science.gov (United States)

    Fujii, N.; Watanabe, T.; Kumazawa, M.

    2005-12-01

    Temporal variations of the scattering sources can be discriminated by the changes in reflectivity and efficiency of energy distributions of transformations of vibration modes (e.g. P-S and/or S-P) at the interfaces among heterogeneous media. The active scattering interface is caused by such temporal variations of material properties of the scattering sources due to various processes associated with crustal deformations and chemical reactions due to the tectonic activities. Occurrence of earthquakes and volcanic eruptions are in some way related to the migrations of super-critical fluid and re-distribution of localized stresses acting on the scattering interfaces. Recently discovered slow slip events and deep non-volcanic tremors are apparently related to the movement of supercritical water supplied by the dehydration of the subducted material, although the mechanisms to generate these phenomena remain uncertain. Intermittent occurrence of these events could suggest that the stress conditions in the crust and upper mantle could be a critical state and triggered by the movements of water vapor. The heterogeneity in the lithosphere can be investigated by monitoring such active scattering interfaces that could be caused by temporal changes of both stress state and heterogeneous distribution of interstitially migrating fluid through surrounding rocks. In order to demonstrate effects of changes in the material properties and/or physical conditions of an embedded low velocity layer, synthetic wave forms are estimated by calculating impulse responses of horizontally layered media with various conditions of scattering interfaces, such as thicknesses, material properties, stress distributions, and so on. Comparisons of changes in waveforms of reflected, transformed, and transmitted elastic waves are made as a function of incident angles, thickness of embedded low velocity layer, and amount of discontinuities of material properties.

  15. Updating of the interpretation of the optical absorption and emission of Verneuil synthetic and natural metamorphic blue sapphire: the role of V2+, V3+and Cr2+

    OpenAIRE

    Palanza, V; N. Chiodini; Galli, A.; Lorenzi, R.; Moretti, F.; Paleari, AMF; Spinolo, GM

    2010-01-01

    In the blue colored sapphires of metamorphic origin and Verneuil synthetic studied here, the absorption-emission properties in the VIS-NIR range are largely determined by Cr3+ and Ti3+, as we have been able to demonstrate recently. In that work a sharp radio-luminescence band occurring at 870 nm in Verneuil blue sapphires was left unattributed: here we give evidence for the attribution of that band to the 2E emission transition of V2+, and for the existence of such an emission also in natural...

  16. Kinetics of aqueous lubrication in the hydrophilic hydrogel Gemini interface.

    Science.gov (United States)

    Dunn, Alison C; Pitenis, Angela A; Urueña, Juan M; Schulze, Kyle D; Angelini, Thomas E; Sawyer, W Gregory

    2015-12-01

    The exquisite sliding interfaces in the human body share the common feature of hydrated dilute polymer mesh networks. These networks, especially when they constitute a sliding interface such as the pre-corneal tear film on the ocular interface, are described by the molecular weight of the polymer chains and a characteristic size of a minimum structural unit, the mesh size, ξ. In a Gemini interface where hydrophilic hydrogels are slid against each other, the aqueous lubrication behavior has been shown to be a function of sliding velocity, introducing a sliding timescale competing against the time scales of polymer fluctuation and relaxation at the surface. In this work, we examine two recent studies and postulate that when the Gemini interface slips faster than the single-chain relaxation time, chains must relax, suppressing the amplitude of the polymer chain thermal fluctuations.

  17. Ruby-sapphire-spinel mineralization in marble of the middle and southern Urals: Geology, mineralogy, and genesis

    Science.gov (United States)

    Kisin, A. Yu.; Murzin, V. V.; Tomilina, A. V.; Pritchin, M. E.

    2016-07-01

    Ruby and spinel occurrences hosted in marble on the eastern slope of the Urals are considered. Ruby- and spinel-bearing marble is a specific rock in granite-gneiss complexes of the East Ural Megazone, which formed at the Late Paleozoic collision stage of the evolution of the Urals. Organogenic marine limestone is the protolith of the marble. No relict sedimentary bedding has been retained in the marble. The observed banding is a secondary phenomenon related to crystallization and is controlled by flow cleavage. Magnesian metasomatism of limestone with the formation of fine-grained dolomite enriched in Cr, V, Ti, Mn, Cu, Zn, Ga, and REE took place at the prograde stage of metamorphism. Dedolomitization of rocks with the formation of background calcite marble also developed at the prograde stage. Mg-calcite marble with spinel and ruby of the first type formed in the metamorphic fluid circulation zone. Magnesian metasomatism with the formation of bicarbonate marble with ruby, pink sapphire, and spinel of the second type developed at the early retrograde stage. The formation of mica-bearing mineralized zones with corundum and spinel of the third type controlled by cleavage fractures is related to the pneumatolytic-hydrothermal stage. The data on ruby-bearing marble in the Urals may be used for forecasting and prospecting of ruby and sapphire deposits hosted in marble worldwide.

  18. Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhi-Feng; QIN Fu-Wen; ZANG Hai-Rong; ZHANG Dong; CHEN Wei-Ji; ZHI An-Bo; LIU Xing-Long; YU Bo; JIANG Xin

    2011-01-01

    Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100sccm.The results show that the properties of the films are strongly dependent on N2 flux.%@@ Highly preferred InN Rims are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer.The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement.The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm.The results show that the properties of the Rims are strongly dependent on N2 flux.

  19. Room temperature ferromagnetism in epitaxial Cr{sub 2}O{sub 3} thin films grown on r-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Punugupati, Sandhyarani, E-mail: spunugu@ncsu.edu; Narayan, Jagdish; Hunte, Frank [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-05-21

    We report on the epitaxial growth and magnetic properties of Cr{sub 2}O{sub 3} thin films grown on r-sapphire substrate using pulsed laser deposition. The X-ray diffraction (XRD) (2θ and Φ) and TEM characterization confirm that the films are grown epitaxially. The r-plane (011{sup ¯}2) of Cr{sub 2}O{sub 3} grows on r-plane of sapphire. The epitaxial relations can be written as [011{sup ¯}2] Cr{sub 2}O{sub 3} ‖ [011{sup ¯}2] Al{sub 2}O{sub 3} (out-of-plane) and [1{sup ¯}1{sup ¯}20] Cr{sub 2}O{sub 3} ‖ [1{sup ¯}1{sup ¯}20] Al{sub 2}O{sub 3} (in-plane). The as-deposited films showed ferromagnetic behavior up to 400 K but ferromagnetism almost vanishes with oxygen annealing. The Raman spectroscopy data together with strain measurements using high resolution XRD indicate that ferromagnetism in r-Cr{sub 2}O{sub 3} thin films is due to the strain caused by defects, such as oxygen vacancies.

  20. Synthesis of Aligned ZnO Nanorod Array on Silicon and Sapphire Substrates by Thermal Evaporation Technique

    Institute of Scientific and Technical Information of China (English)

    K.M.K. Srivatsa; Deepak Chhikara; M. Senthil Kumar

    2011-01-01

    High density ZnO nanorods were grown by thermal evaporation of Zn powder at 700℃ on Si (100) and sapphire (0001) substrates at atmospheric pressure without adding any catalyst. The nanorods were characterizated in terms of their structural and optical properties. The nanorods grown on Si have a diameter of 350-400 nm and a length of 1.2 μm while those on sapphire have a diameter of 600-800 nm and a length of 2.5 μm. During the structural characterization, it is noticed that the rods grow along the (0002) plane with perfect hexagonal facet. The room temperature photoluminescence spectrum showed a strong UV emission peak at 385 nm with a weak green band emission, which confirms that nanorods have good optical properties. It is observed that the oxygen partial pressure plays an important role to control the shape and size of the nanorods in thermal evaporation growth technique.