WorldWideScience

Sample records for sapphire interface velocities

  1. Order in nanometer thick intergranular films at Au-sapphire interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2011-08-15

    Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

  2. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

  3. Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

    International Nuclear Information System (INIS)

    Stoker, D. S.; Keto, J. W.; Baek, J.; Wang, W.; Becker, M. F.; Kovar, D.

    2006-01-01

    We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χ xxxx (3) (3ω;ω,ω,ω)=1.52±0.25x10 -13 esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects

  4. Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

    Science.gov (United States)

    Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

    1982-05-01

    This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

  5. Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by Using Ultra-violet Laser Lift-Of Techniques

    International Nuclear Information System (INIS)

    Wei-Hua, Chen; Xiao-Dong, Hu; Xiang-Ning, Kang; Xu-Rong, Zhou; Xiao-Min, Zhang; Tong-Jun, Yu; Zhi-Jian, Yang; Ke, Xu; Guo-Yi, Zhang; Xu-Dong, Shan; Li-Ping, You

    2009-01-01

    Ultra-violet (KrF excimer laser, λ = 248 nm) laser lift-of (LLO) techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation induced by the ultra-violet laser lift-of (UV-LLO) has been characterized by micro-Raman spectroscopy, micro-photoluminescence, along with high-resolution transmission electron microscopy (HRTEM). HRTEM indicates that UV-LLO induced phase transition takes place above the LLO interface, without phase transition under the LLO interface. The formed cubic GaN often exists as nanocrystal grains attaching on the bulk hexagonal GaN. The half-loop-cluster-like UV-LLO interface indicates that the LLO-induced shock waves has generated and played an assistant role in the decomposition of the hexagonal GaN and in the formation of cubic GaN grains at the LLO surface

  6. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

    2016-06-06

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  7. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  8. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  9. Acoustic mismatch model and thermal phonon radiation across a tin/sapphire interface with radiation temperatures between 1.6 and 3.7 K

    International Nuclear Information System (INIS)

    Bayrle, R.; Weis, O.

    1989-01-01

    Using a special sandwich arrangement consisting of a constantan film, an insulating oxide layer and a superconducting tin-tunnel junction evaporated on an a-cut sapphire, the temperature jump between tin and sapphire has been measured as function of thermal phonon flux under steady-state and transient conditions using rectangular current pulses in the constantan heater. The tunnel junction serves as a very fast thermometer with a time resolution in the nanosecond range. During the steady-state and the heatup interval, full agreement is found between experimental results, and the predictions of the acoustic mismatch model applied to the phonon transfer across the tin/sapphire interface and under the additional assumption that thermal equilibrium exists between electrons and phonons (one-temperature model). In contrast, very strong deviations are found during the cooling process which starts immediately after the end of the heating pulses. This observed nonequilibrium between electron and phonon system is discussed in more detail in a subsequent paper

  10. Interfacial reactions between sapphire and Ag–Cu–Ti-based active braze alloys

    International Nuclear Information System (INIS)

    Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

    2016-01-01

    The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and sapphire have been studied. In separate experiments, Ag–35.3Cu–1.8Ti wt.% and Ag–26.7Cu–4.5Ti wt.% alloys have been sandwiched between pieces of R-plane orientated sapphire and heated in argon to temperatures between 750 and 900 °C for 1 min. The phases at the Ag–Cu–Ti/sapphire interfaces have been studied using selected area electron diffraction, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Gradual and subtle changes at the Ag–Cu–Ti/sapphire interfaces were observed as a function of temperature, along with the formation of a transient phase that permitted wetting of the sapphire. Unequivocal evidence is shown that when the active braze alloys melt, titanium first migrates to the sapphire and reacts to dissolve up to ∼33 at.% oxygen, forming a nanometre-size polycrystalline layer with a chemical composition of Ti 2 O 1–x (x ≪ 1). Ti 3 Cu 3 O particles subsequently nucleate behind the Ti 2 O 1–x layer and grow to become a continuous micrometre-size layer, replacing the Ti 2 O 1–x layer. Finally at 845 °C, a nanometre-size γ-TiO layer forms on the sapphire to leave a typical interfacial structure of Ag–Cu/Ti 3 Cu 3 O/γ-TiO/sapphire consistent with that seen in samples of polycrystalline alumina joined to itself with these active braze alloys. These experimental observations have been used to establish a definitive bonding mechanism for the joining of sapphire with Ag–Cu alloys activated by small amounts of titanium.

  11. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  12. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  13. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-01-01

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  14. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  15. Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

    Science.gov (United States)

    Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

    2018-02-01

    (11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

  16. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2018-05-01

    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

  17. High performance sapphire windows

    Science.gov (United States)

    Bates, Stephen C.; Liou, Larry

    1993-02-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  18. Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

    Science.gov (United States)

    Maskell, P.; Oram, L.

    The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

  19. Interface condition for the Darcy velocity at the water-oil flood front in the porous medium.

    Science.gov (United States)

    Peng, Xiaolong; Liu, Yong; Liang, Baosheng; Du, Zhimin

    2017-01-01

    Flood front is the jump interface where fluids distribute discontinuously, whose interface condition is the theoretical basis of a mathematical model of the multiphase flow in porous medium. The conventional interface condition at the jump interface is expressed as the continuous Darcy velocity and fluid pressure (named CVCM). Our study has inspected this conclusion. First, it is revealed that the principle of mass conservation has no direct relation to the velocity conservation, and the former is not the true foundation of the later, because the former only reflects the kinetic characteristic of the fluid particles at one position(the interface), but not the different two parts of fluid on the different side of the interface which required by the interface conditions. Then the reasonableness of CVCM is queried from the following three aspects:(1)Using Mukat's two phase seepage equation and the mathematical method of apagoge, we have disproved the continuity of each fluid velocity;(2)Since the analytical solution of the equation of Buckley-Leveret equations is acquirable, its velocity jumps at the flood front presents an appropriate example to disprove the CVCM;(3) The numerical simulation model gives impractical result that flood front would stop moving if CVCM were used to calculate the velocities at the interface between two gridcells. Subsequently, a new one, termed as Jump Velocity Condition Model (JVCM), is deduced from Muskat's two phase seepage equations and Darcy's law without taking account of the capillary force and compressibility of rocks and fluids. Finally, several cases are presented. And the comparisons of the velocity, pressure difference and the front position, which are given by JVCM, CVCM and SPU, have shown that the result of JVCM is the closest to the exact solution.

  20. Interface condition for the Darcy velocity at the water-oil flood front in the porous medium.

    Directory of Open Access Journals (Sweden)

    Xiaolong Peng

    Full Text Available Flood front is the jump interface where fluids distribute discontinuously, whose interface condition is the theoretical basis of a mathematical model of the multiphase flow in porous medium. The conventional interface condition at the jump interface is expressed as the continuous Darcy velocity and fluid pressure (named CVCM. Our study has inspected this conclusion. First, it is revealed that the principle of mass conservation has no direct relation to the velocity conservation, and the former is not the true foundation of the later, because the former only reflects the kinetic characteristic of the fluid particles at one position(the interface, but not the different two parts of fluid on the different side of the interface which required by the interface conditions. Then the reasonableness of CVCM is queried from the following three aspects:(1Using Mukat's two phase seepage equation and the mathematical method of apagoge, we have disproved the continuity of each fluid velocity;(2Since the analytical solution of the equation of Buckley-Leveret equations is acquirable, its velocity jumps at the flood front presents an appropriate example to disprove the CVCM;(3 The numerical simulation model gives impractical result that flood front would stop moving if CVCM were used to calculate the velocities at the interface between two gridcells. Subsequently, a new one, termed as Jump Velocity Condition Model (JVCM, is deduced from Muskat's two phase seepage equations and Darcy's law without taking account of the capillary force and compressibility of rocks and fluids. Finally, several cases are presented. And the comparisons of the velocity, pressure difference and the front position, which are given by JVCM, CVCM and SPU, have shown that the result of JVCM is the closest to the exact solution.

  1. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  2. Refractive index of r-cut sapphire under shock pressure range 5 to 65 GPa

    International Nuclear Information System (INIS)

    Cao, Xiuxia; Li, Jiabo; Li, Jun; Li, Xuhai; Xu, Liang; Wang, Yuan; Zhu, Wenjun; Meng, Chuanmin; Zhou, Xianming

    2014-01-01

    High-pressure refractive index of optical window materials not only can provide information on electronic polarizability and band-gap structure, but also is important for velocity correction in particle-velocity measurement with laser interferometers. In this work, the refractive index of r-cut sapphire window at 1550 nm wavelength was measured under shock pressures of 5–65 GPa. The refractive index (n) decreases linearly with increasing shock density (ρ) for shock stress above the Hugoniot elastic limit (HEL): n = 2.0485 (± 0.0197) − 0.0729 (± 0.0043)ρ, while n remains nearly a constant for elastic shocks. This behavior is attributed to the transition from elastic (below HEL) to heterogeneous plastic deformation (above HEL). Based on the obtained refractive index-density relationship, polarizability of the shocked sapphire was also obtained

  3. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    International Nuclear Information System (INIS)

    Klinter, Andreas J.; Leon-Patino, Carlos A.; Drew, Robin A.L.

    2010-01-01

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions θ transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl 2 O 4 for Al-7Cu and Al 2 O 3 for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl 2 O 4 under CuAl 2 drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl 2 O 4 causes the reduced σ sl and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in θ with higher copper contents is the increasing σ lv of the alloy.

  4. Methane flux across the air-water interface - Air velocity effects

    Science.gov (United States)

    Sebacher, D. I.; Harriss, R. C.; Bartlett, K. B.

    1983-01-01

    Methane loss to the atmosphere from flooded wetlands is influenced by the degree of supersaturation and wind stress at the water surface. Measurements in freshwater ponds in the St. Marks Wildlife Refuge, Florida, demonstrated that for the combined variability of CH4 concentrations in surface water and air velocity over the water surface, CH4 flux varied from 0.01 to 1.22 g/sq m/day. The liquid exchange coefficient for a two-layer model of the gas-liquid interface was calculated as 1.7 cm/h for CH4 at air velocity of zero and as 1.1 + 1.2 v to the 1.96th power cm/h for air velocities from 1.4 to 3.5 m/s and water temperatures of 20 C.

  5. Interface control scheme for computer high-speed interface unit

    Science.gov (United States)

    Ballard, B. K.

    1975-01-01

    Control scheme is general and performs for multiplexed and dedicated channels as well as for data-bus interfaces. Control comprises two 64-pin, dual in-line packages, each of which holds custom large-scale integrated array built with silicon-on-sapphire complementary metal-oxide semiconductor technology.

  6. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Klinter, Andreas J., E-mail: andreas.klinter@mail.mcgill.ca [Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 University Street, Montreal, QC, H3A 2B2 (Canada); Leon-Patino, Carlos A. [Instituto de Investigaciones Metalurgicas, Universidad Michoacana de San Nicolas de Hidalgo, Apdo. Postal 888, CP 58000 Morelia, Michoacan (Mexico); Drew, Robin A.L. [Faculty of Engineering and Computer Science, Concordia University, 1455 Maisonneuve Blvd, EV 2.169, Montreal, QC, H3G 1M8 (Canada)

    2010-02-15

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions {theta} transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl{sub 2}O{sub 4} for Al-7Cu and Al{sub 2}O{sub 3} for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl{sub 2}O{sub 4} under CuAl{sub 2} drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl{sub 2}O{sub 4} causes the reduced {sigma}{sub sl} and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in {theta} with higher copper contents is the increasing {sigma}{sub lv} of the alloy.

  7. On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Voronenkov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Y. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

  8. Interfacial thermal resistance between high-density polyethylene (HDPE) and sapphire

    International Nuclear Information System (INIS)

    Zheng Kun; Ma Yong-Mei; Wang Fo-Song; Zhu Jie; Tang Da-Wei

    2014-01-01

    To improve the thermal conductivity of polymeric composites, the numerous interfacial thermal resistance (ITR) inside is usually considered as a bottle neck, but the direct measurement of the ITR is hardly reported. In this paper, a sandwich structure which consists of transducer/high density polyethylene (HDPE)/sapphire is prepared to study the interface characteristics. Then, the ITRs between HDPE and sapphire of two samples with different HDPE thickness values are measured by time-domain thermoreflectance (TDTR) method and the results are ∼ 2 × 10 −7 m 2 ·K·W −1 . Furthermore, a model is used to evaluate the importance of ITR for the thermal conductivity of composites. The model's analysis indicates that reducing the ITR is an effective way of improving the thermal conductivity of composites. These results will provide valuable guidance for the design and manufacture of polymer-based thermally conductive materials. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Wetting behavior of liquid Fe-C-Ti alloys on sapphire

    International Nuclear Information System (INIS)

    Gelbstein, M.; Froumin, N.; Frage, N.

    2008-01-01

    Wetting behavior in the (Fe-C-Ti)/sapphire system was studied at 1823 K. The wetting angle between sapphire and Fe-C alloys is higher than 90 deg. (93 deg. and 105 deg. for the alloys with 1.4 and 3.6 at.% C, respectively). The presence of Ti improves the wetting of the iron-carbon alloys, especially for the alloys with carbon content of 3.6 at.%. The addition of 5 at.% Ti to Fe-3.6 at.% C provides a contact angle of about 30 deg., while the same addition to Fe-1.4 at.% C decreases the wetting angle to 70 deg. only. It was established that the wetting in the systems is controlled by the formation of a titanium oxicarbide layer at the interface, which composition and thickness depend on C and Ti contents in the melt. The experimental observations are well accounted for by a thermodynamic analysis of the Fe-Ti-Al-O-C system

  10. Research Progress and Development of Sapphire Fiber Sensor

    Directory of Open Access Journals (Sweden)

    Guochang ZHAO

    2014-07-01

    Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

  11. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  12. Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

    Science.gov (United States)

    Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

    2018-01-01

    Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

  13. Influence of interfacial reactions on the fiber push-out behavior in sapphire fiber-reinforced-NiAl(Yb) composites

    International Nuclear Information System (INIS)

    Tewari, S.N.; Asthana, R.; Tiwari, R.; Bowman, R.R.

    1993-01-01

    The influence of microstructure of the fiber-matrix interface on the fiber push-out behavior has been examined in sapphire fiber-reinforced NiAl and NiAl(Yb) matrix composites synthesized using powder metallurgy techniques combined with zone directional solidification (DS). The push-out stress-displacement curves were observed to consist of an initial 'pseudoelastic' region, wherein the stress increased linearly with displacement, followed by an 'inelastic' region, where the slope of the stress-displacement plot decreased until a maximum stress was reached, and the subsequent stress drop to a constant 'frictional' stress. Chemical reaction between the fiber and the matrix resulted in higher interfacial shear strength in powder cloth processed sapphire-NiAl(Yb) composites as compared to the sapphire-NiAl composites. Grain boundaries in contact with the fibers on the back face of the push-out samples were the preferred sites for crack nucleation in PM composites. The frictional stress was independent of the microstructure and processing variables for NiAl composites, but showed strong dependence on these variables for the NiAl(Yb) composites. The DS processing enhanced the fiber-matrix interfacial shear strength of feedstock PM-NiAl/sapphire composites. However, it reduced the interfacial shear strength of PM-NiAl(Yb)-sapphire composites

  14. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    International Nuclear Information System (INIS)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

    2006-01-01

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

  15. Neutron Transmission of Single-crystal Sapphire Filters

    Science.gov (United States)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-05-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

  16. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-01-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)

  17. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2004-01-01

    A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons

  18. Reduced cost and improved figure of sapphire optical components

    Science.gov (United States)

    Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

    2015-10-01

    Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

  19. Sapphire capillary interstitial irradiators for laser medicine

    Science.gov (United States)

    Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

    2018-04-01

    In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

  20. Sapphire: A kinking nonlinear elastic solid

    Science.gov (United States)

    Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

    2006-03-01

    Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

  1. Controlled planar interface synthesis by ultrahigh vacuum diffusion bonding/deposition

    International Nuclear Information System (INIS)

    Kim, M. J.; Carpenter, R. W.; Cox, M. J.; Xu, J.

    2000-01-01

    An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 degree sign C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a specified orientation. Interfacial layers can be deposited by electron beam evaporation and/or sputter deposition in any layered or alloyed combination on the substrates before bonding. The instrument can accommodate cylindrical and/or wafer type specimens whose sizes are sufficient for fracture mechanical testing to measure interface bond strength. A variety of planar interfaces of metals, semiconductors, and ceramics were synthesized. Examples of bonded stainless steel/Ti/stainless steel, Si/Si, and sapphire/sapphire interfaces are presented. (c) 2000 Materials Research Society

  2. Controllable laser thermal cleavage of sapphire wafers

    Science.gov (United States)

    Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

    2018-03-01

    Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

  3. Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

    2009-07-01

    Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

  4. Oleophobic properties of the step-and-terrace sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.

  5. Surface study of irradiated sapphires from Phrae Province, Thailand using AFM

    Science.gov (United States)

    Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.

    2017-09-01

    The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.

  6. Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

    Science.gov (United States)

    Carroz, L.; Duffar, T.

    2018-05-01

    In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

  7. Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

    International Nuclear Information System (INIS)

    Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

    2004-01-01

    We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

  8. Spatial chirp in Ti:sapphire multipass amplifier

    International Nuclear Information System (INIS)

    Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

    2017-01-01

    The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

  9. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  10. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  11. Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

    2012-06-30

    The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

  12. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    International Nuclear Information System (INIS)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-01-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices. (paper)

  13. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  14. Visual observation of gas hydrates nucleation and growth at a water - organic liquid interface

    Science.gov (United States)

    Stoporev, Andrey S.; Semenov, Anton P.; Medvedev, Vladimir I.; Sizikov, Artem A.; Gushchin, Pavel A.; Vinokurov, Vladimir A.; Manakov, Andrey Yu.

    2018-03-01

    Visual observation of nucleation sites of methane and methane-ethane-propane hydrates and their further growth in water - organic liquid - gas systems with/without surfactants was carried out. Sapphire Rocking Cell RCS6 with transparent sapphire cells was used. The experiments were conducted at the supercooling ΔTsub = 20.2 °C. Decane, toluene and crude oils were used as organics. Gas hydrate nucleation occurred on water - metal - gas and water - sapphire - organic liquid three-phase contact lines. At the initial stage of growth hydrate crystals rapidly covered the water - gas or water - organics interfaces (depending on the nucleation site). Further hydrate phase accrete on cell walls (sapphire surface) and into the organics volume. At this stage, growth was accompanied by water «drawing out» from under initial hydrate film formed at water - organic interface. Apparently, it takes place due to water capillary inflow in the reaction zone. It was shown that the hydrate crystal morphology depends on the organic phase composition. In the case of water-in-decane emulsion relay hydrate crystallization was observed in the whole sample, originating most likely due to the hydrate crystal intergrowth through decane. Contacts of such crystals with adjacent water droplets result in rapid hydrate crystallization on this droplet.

  15. Semipolar GaN grown on m-plane sapphire using MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

    2008-07-01

    We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    International Nuclear Information System (INIS)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-01-01

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  17. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Science.gov (United States)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-12-01

    Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  18. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  19. Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

    Science.gov (United States)

    Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

    2017-09-01

    Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

  20. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  1. Ti:Sapphire waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

    2007-01-01

    Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

  2. Reliability improvement methods for sapphire fiber temperature sensors

    Science.gov (United States)

    Schietinger, C.; Adams, B.

    1991-08-01

    Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

  3. Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

    Science.gov (United States)

    Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

    2011-05-01

    The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

  4. Nonlinearity Mechanism and Correction of Sapphire Fiber Temperature Sensor on Blackbody Cavity

    Directory of Open Access Journals (Sweden)

    Tiejun Cao

    2014-06-01

    Full Text Available Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stability of the sensor. In order to solve the nonlinear problems which exist in the measurement, at first, the sapphire fiber optic temperature sensor temperature measurement principle and nonlinear generation mechanism are studied; secondly piecewise linear interpolation and spline interpolation linearization algorithm is designed with combining the nonlinear characteristics of sapphire optical fiber temperature sensor, and the program is designed on its linear and associated signal processing. Experimental results show that a good linearization of sapphire fiber optic temperature sensor can been achieved in this method.

  5. 'Sapphire' project. Objectives and outcomes

    International Nuclear Information System (INIS)

    Shkolnik, V.S.

    1997-01-01

    'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

  6. Synthesis of single-crystalline Al layers in sapphire

    International Nuclear Information System (INIS)

    Schlosser, W.; Lindner, J.K.N.; Zeitler, M.; Stritzker, B.

    1999-01-01

    Single-crystalline, buried aluminium layers were synthesized by 180 keV high-dose Al + ion implantation into sapphire at 500 deg. C. The approximately 70 nm thick Al layers exhibit in XTEM investigations locally abrupt interfaces to the single-crystalline Al 2 O 3 top layer and bulk, while thickness and depth position are subjected to variations. The layers grow by a ripening process of oriented Al precipitates, which at low doses exist at two different orientations. With increasing dose, precipitates with one out of the two orientations are observed to exist preferentially, finally leading to the formation of a single-crystalline layer. Al outdiffusion to the surface and the formation of spherical Al clusters at the surface are found to be competing processes to buried layer formation. The formation of Al layers is described by Rutherford Backscattering Spectroscopy (RBS), Cross-section transmission electron microscopy (XTEM) and Scanning electron microscopy (SEM) studies as a function of dose, temperature and substrate orientation

  7. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    . However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

  8. Optimizing Ti:Sapphire laser for quantitative biomedical imaging

    Science.gov (United States)

    James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

    2018-02-01

    Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

  9. Oxidation states of Fe and Ti in blue sapphire

    International Nuclear Information System (INIS)

    Wongrawang, P; Wongkokua, W; Monarumit, N; Thammajak, N; Wathanakul, P

    2016-01-01

    X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe 2+ and Ti 4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe 3+ state; and Ti at 4984 eV, corresponding to Ti 4+ . From these results, we propose Fe 3+ -Ti 4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV–vis absorption spectra, to describe the cause of the color of blue sapphire. (paper)

  10. Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

    Science.gov (United States)

    Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

    2018-03-01

    The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

  11. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  12. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

    Science.gov (United States)

    Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-08-01

    Group 3 (sapphire ceramic brackets) i.e., Group 2 showed the highest light absorption and the least translucency followed by groups 1 and 3. Shear bond strength results were 2.4 mpa, 1.9 mpa and 3.6 mpa for groups 1,2 and 3 respectively. Superior shear bond strength was recorded in group 3 (sapphire ceramic brackets). ARI results showed that group 3 had increased bond between bracket adhesive interfaces when compared to the other 2 groups. From this study, it has been concluded that sapphire ceramic brackets (Group 3) was superior in translucency and shear bond strength followed by monocrystalline and polycrystalline ceramic brackets.

  13. Use of sapphire as a neutron damage monitor for pressure vessel steels

    International Nuclear Information System (INIS)

    Pells, G.P.; Fudge, A.J.; Murphy, M.J.; Watt, S.

    1989-01-01

    Single crystal α-Al 2 O 3 (sapphire) has been neutron irradiated over a range of dose, dose rate and neutron energy spectra at temperatures from 60 to 310 0 C. Values of optical absorption at 400 nm, the peak of the aluminum vacancy absorption band, were plotted against damage dose expressed in terms of dpa of Al in sapphire obtained from measurements of induced radio-activity in activation foils irradiated with the sapphires and from calculation of the neutron energy spectrum at the irradiation position. The neutron energy spectrum was calculated using modern neutron transport computer codes and adjusted in the light of measurements obtained from multiple foil activation experiments. A simple response curve was obtained for all sapphires irradiated at temperatures between 220 to 310 0 C and for sapphires irradiated below 200 0 C which had been annealed at 290 0 C irrespective of dose rate or neutron beam energy spectrum. The single response curve for irradiations performed in a variety of neutron energy spectra validate the neutron energy spectrum computational procedures

  14. Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

    International Nuclear Information System (INIS)

    Zeng, Yong; Zhao, Yan; Jiang, Yijian

    2015-01-01

    Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

  15. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  16. Investigation of iron film-substrate interfaces using Rutherford backscattering and channeling techniques

    International Nuclear Information System (INIS)

    Maheswaran, S.; Thevuthasan, S.

    1999-01-01

    Thin films of α-Fe 2 O 3 (0001) (hematite) were epitaxially grown on Al 2 O 3 (0001) substrates using the new molecular beam epitaxy (MBE) system at the Environmental Molecular Sciences Laboratory (EMSL). We have investigated the interface between the hematite films and sapphire substrates using Rutherford Backscattering (RBS) and channeling experiments. Theoretical simulations were performed using VEGAS code to investigate the surface and interface structural properties of the films

  17. Thermal healing of the sub-surface damage layer in sapphire

    International Nuclear Information System (INIS)

    Pinkas, Malki; Lotem, Haim; Golan, Yuval; Einav, Yeheskel; Golan, Roxana; Chakotay, Elad; Haim, Avivit; Sinai, Ela; Vaknin, Moshe; Hershkovitz, Yasmin; Horowitz, Atara

    2010-01-01

    The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

  18. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-01-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  19. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  20. Sapphire-fiber-based distributed high-temperature sensing system.

    Science.gov (United States)

    Liu, Bo; Yu, Zhihao; Hill, Cary; Cheng, Yujie; Homa, Daniel; Pickrell, Gary; Wang, Anbo

    2016-09-15

    We present, for the first time to our knowledge, a sapphire-fiber-based distributed high-temperature sensing system based on a Raman distributed sensing technique. High peak power laser pulses at 532 nm were coupled into the sapphire fiber to generate the Raman signal. The returned Raman Stokes and anti-Stokes signals were measured in the time domain to determine the temperature distribution along the fiber. The sensor was demonstrated from room temperature up to 1200°C in which the average standard deviation is about 3.7°C and a spatial resolution of about 14 cm was achieved.

  1. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    International Nuclear Information System (INIS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-01-01

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  3. Critical thickness for Nb nanofilm on sapphire substrate: a critical analysis using finite element method

    International Nuclear Information System (INIS)

    Kumar, Arun; Subramaniam, Anandh

    2009-01-01

    Full text: On growth beyond critical thickness, interfacial misfit dislocations partially relax the misfit strains, in epitaxially grown nanofilms. In this study the stress state and growth of nanofilms is simulated using Finite Element Method (FEM); by imposing stress-free strains, corresponding to the lattice mismatch between Nb nanofilm and Sapphire substrate. On growth of the Nb nanofilm, a triangular network of edge misfit dislocations nucleates at the (0001) Al2ο3 || (111) Nb , interface. Using a combined simulation of a coherently strained nanofilm and an edge dislocation, the equilibrium criterion for the nucleation of an edge dislocation is determined. Theoretical analyses in literature use only the component of the Burger's vector parallel to the interface, which is an erroneous description of the stress state and energetics of the system. In this investigation the full interfacial edge dislocation is simulated using standard commercially available software and comparisons are made with results available in literature to bring out the utility of the methodology

  4. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  5. SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

    Energy Technology Data Exchange (ETDEWEB)

    Shimoji, Yutaka

    2010-08-09

    Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

  6. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  7. Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

    Science.gov (United States)

    Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

    2018-01-08

    A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

  8. Effect of coating thickness on interfacial shear behavior of zirconia-coated sapphire fibers in a polycrystalline alumina matrix

    International Nuclear Information System (INIS)

    Hellmann, J.R.; Chou, Y.S.

    1995-01-01

    The effect of zirconia (ZrO 2 ) interfacial coatings on the interfacial shear behavior in sapphire reinforced alumina was examined in this study. Zirconia coatings of thicknesses ranging from 0.15 to 1.45 μm were applied to single crystal sapphire (Saphikon) fibers using a particulate loaded sol dipping technique. After calcining at 1,100 C in air, the coated fibers were incorporated into a polycrystalline alumina matrix via hot pressing. Interfacial shear strength and sliding behavior of the coated fibers was examined using thin-slice indentation fiber pushout and pushback techniques. In all cases, debonding and sliding occurred at the interface between the fibers and the coating. The coatings exhibited a dense microstructure and led to a higher interfacial shear strength (> 240 MPa) and interfacial sliding stress (> 75 MPa) relative to previous studies on the effect of a porous interphase on interfacial properties. The interfacial shear strength decreased with increasing fiber coating thickness (from 389 ± 59 to 241 ± 43 MPa for 0.15 to 1.45 microm thick coatings, respectively). Sliding behavior exhibited load modulation with increasing displacement during fiber sliding which is characteristic of fiber roughness-induced stick-slip. The high interfacial shear strengths and sliding stresses measured in this study, as well as the potentially strength degrading surface reconstruction observed on the coated fibers after hot pressing and heat treatment, indicate that dense zirconia coatings are not suitable candidates for optimizing composite toughness and strength in the sapphire fiber reinforced alumina system

  9. (211) oriented ZnTe growth on m-plane sapphire by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

    2013-11-15

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  11. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  12. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  13. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  14. Thermal neutron scattering kernels for sapphire and silicon single crystals

    International Nuclear Information System (INIS)

    Cantargi, F.; Granada, J.R.; Mayer, R.E.

    2015-01-01

    Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

  15. Neutron method for NDA in the Sapphire Project

    International Nuclear Information System (INIS)

    Lewis, K.D.

    1995-01-01

    The implementation of Project Sapphire, the top-secret mission to the Republic of Kazakhstan to recover weapons-grade nuclear materials, consisted of four major elements: (1) repacking of fissile material from Kazakh containers into suitable U.S. containers; (2) nondestructive analyses (NDA) to quantify the 235 U content of each container for nuclear criticality safety and compliance purposes; (3) packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of the Sapphire operations to analyze uranium/beryllium (U/Be) alloys and compounds for 235 U content

  16. Growth of cubic InN on r-plane sapphire

    International Nuclear Information System (INIS)

    Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

    2003-01-01

    InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

  17. An injection modelocked Ti-sapphire laser for synchronous photoinjection

    International Nuclear Information System (INIS)

    Hovater, C.; Poelker, M.

    1997-01-01

    The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

  18. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

    DEFF Research Database (Denmark)

    König, Karsten; Andersen, Peter E.; Le, Tuan

    2015-01-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...... imaging capability using different biological samples, i.e. cell monolayers, corneal tissue, and human skin. With the novel laser, the realization of very compact Ti:sapphire-based systems for high-quality multiphoton imaging at a significantly size and weight compared to current systems will become...

  19. In situ observation of Ag-Cu-Ti liquid alloy/solid oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Durov, O.V. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)], E-mail: avdu@ukr.net; Krasovskyy, V.P. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)

    2008-11-15

    In situ investigation methods are a very interesting means for understanding high-temperature interface processes. A method of direct observation of the interactions between transparent materials (Al{sub 2}O{sub 3}, SiO{sub 2}, CaF{sub 2}) and metal melts was elaborated. For the Ag-36.65 at.%Cu-8.15 at.%Ti/sapphire system, the formation of a dark compound at the interface was observed to occur at high temperature. This result does not confirm the conclusion of a neutron spectroscopy study which indicated that titanium oxides form at the interface only during solidification of the alloy. Interactions of the same alloy with SiO{sub 2} and CaF{sub 2} were also considered.

  20. Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

    Science.gov (United States)

    Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

    2017-09-01

    Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

  1. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  2. An Advantage of the Equivalent Velocity Spectroscopy for Femtsecond Pulse Radiolysis

    CERN Document Server

    Kondoh, Takafumi; Tagawa, Seiichi; Tomosada, Hiroshi; Yang Jin Feng; Yoshida, Yoichi

    2005-01-01

    For studies of electron beam induced ultra-fast reaction process, femtosecond(fs) pulse radiolysis is under construction. To realize fs time resolution, fs electron and analyzing light pulses and their jitter compensation system are needed. About a 100fs electron pulse was generated by a photocathode RF gun linac and a magnetic pulse compressor. Synchronized Ti: Sapphire laser have a puleswidth about 160fs. And, it is significant to avoid degradation of time resolution caused by velocity difference between electron and analyzing light in a sample. In the 'Equivalent velocity spectroscopy' method, incident analyzing light is slant toward electron beam with an angle associated with refractive index of sample. Then, to overlap light wave front and electron pulse shape, electron pulse shape is slanted toward the direction of travel. As a result of the equivalent velocity spectroscopy for hydrated electrons, using slanted electron pulse shape, optical absorption rise time was about 1.4ps faster than normal electro...

  3. High velocity properties of the dynamic frictional force between ductile metals

    International Nuclear Information System (INIS)

    Hammerberg, James Edward; Hollan, Brad L.; Germann, Timothy C.; Ravelo, Ramon J.

    2010-01-01

    The high velocity properties of the tangential frictional force between ductile metal interfaces seen in large-scale NonEquilibrium Molecular Dynamics (NEMD) simulations are characterized by interesting scaling behavior. In many cases a power law decrease in the frictional force with increasing velocity is observed at high velocities. We discuss the velocity dependence of the high velocity branch of the tangential force in terms of structural transformation and ultimate transition, at the highest velocities, to confined fluid behavior characterized by a critical strain rate. The particular case of an Al/Al interface is discussed.

  4. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

    Science.gov (United States)

    Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

    2017-04-20

    Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH 3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001) GaN ∥(0001) sapphire and (101[combining macron]0) GaN ∥(112[combining macron]0) sapphire . Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

  5. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  6. Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States)

    2017-12-15

    The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

  7. Interface stability during rapid directional solidification

    International Nuclear Information System (INIS)

    Hoglund, D.E.; Aziz, M.J.

    1992-01-01

    This paper reports that at the solidification velocities observed during pulsed laser annealing, the planar interface between solid and liquid is stabilized by capillarity and nonequilibrium effects such as solute trapping. The authors used Rutherford backscattering and electron microscopy to determine the nonequilibrium partition coefficient and critical concentration for breakdown of the planar interface as a function of interface velocity for Sn-implanted silicon. This allows the authors to test the applicability of the Mulliins-Sekerka stability theory to interfaces not in local equilibrium and to test the Coriell-Sekerka and other theories for oscillatory instabilities

  8. Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

    1991-06-29

    Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

  9. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  10. Contribution to the microwave characterisation of superconductive materials by means of sapphire resonators

    International Nuclear Information System (INIS)

    Hanus, Xavier

    1993-01-01

    The objective of this research thesis is to find a compact resonant structure which would allow the residual surface impedance of superconductive samples to be simply, quickly and economically characterised. The author first explains why he decided to use a sapphire single-crystal as inner dielectric, given some performance reached by resonant structures equipped with such inner dielectrics, and given constraints adopted from the start. He explains the origin of microwave losses which appear in this type of resonant structure, i.e. respectively the surface impedance as far as metallic losses are concerned, and the sapphire dielectric loss angle for as far as dielectric losses are concerned. The experimental installation and the principle of microwave measurements are described. The performance of different possible solutions of resonant structures from starting criteria is presented. The solution of the cavity-sapphire with a TE 011 resonant mode is derived [fr

  11. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Fang-Wei [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

    2016-07-01

    Highlights: • Nanoscale patterned sapphire substrate was prepared by anodic-aluminum-oxide etching mask. • Influence of aspect ratio of NPSS on structural and electrical properties of GaN films was studied. • Low dislocation density and high carrier mobility of GaN films were grown on high aspect ratio NPSS. - Abstract: This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 10{sup 8} cm{sup −2} for GaN on bare sapphire to 4.9 × 10{sup 8} cm{sup −2} for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm{sup 2}/Vs for GaN on bare sapphire to 199 cm{sup 2}/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with

  12. Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects

    Science.gov (United States)

    Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

    2018-02-01

    Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.

  13. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison

  14. Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

    International Nuclear Information System (INIS)

    He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

    2003-01-01

    Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

  15. High resolution electron microscopy studies of interfaces between Al2O3 substrates and MBE grown Nb films

    International Nuclear Information System (INIS)

    Mayer, J.; Ruhle, M.; Dura, J.; Flynn, C.P.

    1991-01-01

    This paper reports on single crystal niobium films grown by Molecular Beam Epitaxy (MBE) on (001) S sapphire substrates. Cross-sectional specimens with thickness of 2 O 3 interface could be investigated by high resolution electron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111) Nb parallel (0001) S and [1 bar 10] Nb parallel [2 bar 1 bar 10] S . The atomistic structure of the interface was identified by HREM

  16. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  17. Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

    International Nuclear Information System (INIS)

    Yi, Jong Hoon; Horn, Roland; Wendt, K.

    2001-01-01

    We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

  18. Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

    International Nuclear Information System (INIS)

    Yao-Bo, Pan; Sheng-Li, Qi; Hao, Fang; Guo-Yi, Zhang; Mao-Sheng, Hao

    2010-01-01

    We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction. (cross-disciplinary physics and related areas of science and technology)

  19. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    International Nuclear Information System (INIS)

    Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

    2015-01-01

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

  20. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2015-08-17

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

  1. A neutron method for NDA analysis in the SAPPHIRE Project

    International Nuclear Information System (INIS)

    Lewis, K.D.

    1995-01-01

    The implementation of Project SAPPHIRE, the top secret mission to the Republic of Kazakhstan to recover weapons grade nuclear materials, consisted of four major elements: (1) the re-packing of fissile material from Kazakh containers into suitable US containers; (2) nondestructive analyses (NDA) to quantify the U-235 content of each container for Nuclear Criticality Safety and compliance purposes; (3) the packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) the shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of SAPPHIRE operations to analyze uranium/beryllium (U/Be) alloys and compounds for U-235 content

  2. Thermal stress resistance of ion implanted sapphire crystals

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

    1999-01-01

    Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

  3. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  4. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  5. Study of sapphire probe tip wear when scanning on different materials

    International Nuclear Information System (INIS)

    Nicolet, Anaïs; Küng, Alain; Meli, Felix

    2012-01-01

    The accuracy of today's coordinate measuring machines (CMM) has reached a level at which exact knowledge of each component is required. The role of the probe tip is particularly crucial as it is in contact with the sample surface. Understanding how the probe tip wears off will help to narrow the measurement errors. In this work, wear of a sapphire sphere was studied for different scanning conditions and with different sample materials. Wear depth on the probe was investigated using an automated process in situ on the METAS micro-CMM and completed by measurements with an atomic force microscope. We often found a linear dependence between the wear depth and the scan length ranging from 0.5 to 9 nm m −1 , due to variations in scan speed, contact force or sample material. In the case of steel, the wear rate is proportional to the scan speed, while for aluminum several processes seem to interact. A large amount of debris was visible after the tests. Except for aluminum, wear was visible only on the sphere and not on the sample. Sapphire/steel is the worst combination in terms of wear, whereas the combination sapphire/ceramic exhibits almost no wear. (paper)

  6. Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

    International Nuclear Information System (INIS)

    Lacroix, Yves; Chung, Sung-Hoon; Sakai, Shiro

    2001-01-01

    An experiment was performed to explain the appearance of cracks along mesa structures during the processing of GaN device layers grown on sapphire substrates. Micro-Raman spectroscopy was used to measure the position-dependent stress in the GaN layer. We show evidence that the stress at the interface with the substrate may be larger along the mesa structures than that of the as-grown layer, and that this increase in stress can be enough to induce cracks along mesa structures during processing. We report on the formation of cracks that propagate guided by the nonuniformity of the stress induced by the formation of mesa structures in the GaN layer, independent of crystal direction. The understanding of cracking mechanisms has implications in GaN-based device structures that require heteroepitaxial growth of layers with different lattice size and thermal expansion coefficients. [copyright] 2001 American Institute of Physics

  7. Antireflection coatings for intraocular lenses of sapphire and fianite

    Energy Technology Data Exchange (ETDEWEB)

    Babin, A.A.; Konoplev, Yu.N.; Mamaev, Yu.A. [Inst. of Applied Physics, Nizhnii Novgorod (Russian Federation)] [and others

    1995-10-01

    Broadband antireflection coatings for intraocular lenses of sapphire and fianite are calculated and implemented practically. Their residual reflectance in the liquid with a refracting index of 1.336 is below 0.2% from each face virtually over the entire visible region. 7 refs., 2 figs., 2 tabs.

  8. Scintillation of sapphire under particle excitation at low temperature

    International Nuclear Information System (INIS)

    Amare, J; Beltran, B; Cebrian, S; Coron, N; Dambier, G; GarcIa, E; Gomez, H; Irastorza, I G; Leblanc, J; Luzon, G; Marcillac, P de; Martinez, M; Morales, J; Ortiz de Solorzano, A; Pobes, C; Puimedon, J; Redon, T; RodrIguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A

    2006-01-01

    The scintillation properties of undoped sapphire at very low temperature have been studied in the framework of the ROSEBUD (Rare Objects SEarch with Bolometers UnDerground) Collaboration devoted to dark matter searches. We present an estimation of its light yield under gamma, alpha and neutron excitation

  9. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  10. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

  11. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  12. Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

    Science.gov (United States)

    Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

    2018-01-01

    The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

  13. A Century of Sapphire Crystal Growth

    Science.gov (United States)

    2004-05-17

    should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

  14. Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

    International Nuclear Information System (INIS)

    Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

    2004-01-01

    Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

  15. Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

    Science.gov (United States)

    Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

    2013-12-02

    We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

  16. Design of all solid state tunable single-mode Ti: sapphire laser for nuclear industry

    International Nuclear Information System (INIS)

    Lee, J.H.; Nam, S.M.; Lee, Y.J.; Lee, J.M.; Horn, Roland E.; Wendt, Klaus

    1999-01-01

    We designed a Ti:Sapphire laser pumped by a diode laser pumped solid state laser (DPSSL). The DPSSL was intra-cavity frequency doubled and it had 20 W output power. The Ti:Sapphire laser was designed for single longitudinal mode lasing. For single mode lasing, the laser used several solid etalons. We simulated temporal evolution of the laser pulse and single pass amplification rate of the photons in each modes from rate equations. From the result, we found that single mode lasing is viable in this cavity

  17. 3D Crustal Velocity Structure Model of the Middle-eastern North China Craton

    Science.gov (United States)

    Duan, Y.; Wang, F.; Lin, J.; Wei, Y.

    2017-12-01

    Lithosphere thinning and destruction in the middle-eastern North China Craton (NCC), a region susceptible to strong earthquakes, is one of the research hotspots in solid earth science. Up to 42 wide-angle reflection/refraction deep seismic sounding (DSS) profiles have been completed in the middle-eastern NCC, we collect all the 2D profiling results and perform gridding of the velocity and interface depth data, and build a 3D crustal velocity structure model for the middle-eastern NCC, named HBCrust1.0, using the Kriging interpolation method. In this model, four layers are divided by three interfaces: G is the interface between the sedimentary cover and crystalline crust, with velocities of 5.0-5.5 km/s above and 5.8-6.0 km/s below. C is the interface of the upper and lower crust, with velocity jump from 6.2-6.4 km/s to 6.5-6.6 km/s. M is the interface between the crust and upper mantle, with velocity 6.7-7.0 km/s at the crust bottom and 7.9-8.0 km/s on mantle top. Our results show that the first arrival time calculated from HBCust1.0 fit well with the observation. It also demonstrates that the upper crust is the main seismogenic layer, and the brittle-ductile transition occurs at depths near interface C. The depth of interface Moho varies beneath the source area of the Tangshan earth-quake, and a low-velocity structure is found to extend from the source area to the lower crust. Based on these observations, it can be inferred that stress accumulation responsible for the Tangshan earthquake may have been closely related to the migration and deformation of the mantle materials. Comparisons of the average velocities of the whole crust, the upper and the lower crust show that the average velocity of the lower crust under the central part of the North China Basin (NCB) in the east of the craton is obviously higher than the regional average, this high-velocity probably results from longterm underplating of the mantle magma. This research is founded by the Natural Science

  18. Superhilac real-time velocity measurements

    International Nuclear Information System (INIS)

    Feinberg, B.; Meaney, D.; Thatcher, R.; Timossi, C.

    1987-03-01

    Phase probes have been placed in several external beam lines at the LBL heavy ion linear accelerator (SuperHILAC) to provide non-destructive velocity measurements independent of the ion being accelerated. The existing system has been improved to provide the following features: a display refresh rate better than twice per second, a sensitive pseudo-correlation technique to pick out the signal from the noise, simultaneous measurements of up to four ion velocities when more than one beam is being accelerated, and a touch-screen operator interface. These improvements allow the system to be used as a routine tuning aid and beam velocity monitor

  19. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  20. Linear flow dynamics near a T/NT interface

    Science.gov (United States)

    Teixeira, Miguel; Silva, Carlos

    2011-11-01

    The characteristics of a suddenly-inserted T/NT interface separating a homogeneous and isotropic shear-free turbulence region from a non-turbulent flow region are investigated using rapid distortion theory (RDT), taking full account of viscous effects. Profiles of the velocity variances, TKE, viscous dissipation rate, turbulence length scales, and pressure statistics are derived, showing very good agreement with DNS. The normalized inviscid flow statistics at the T/NT interface do not depend on the form of the assumed TKE spectrum. In the non-turbulent region, where the flow is irrotational (except within a thin viscous boundary layer), the dissipation rate decays as z-6, where z is distance from the T/NT interface. The mean pressure exhibits a decrease towards the turbulence due to the associated velocity fluctuations, consistent with the generation of a mean entrainment velocity. The vorticity variance and dissipation rate display large maxima at the T/NT interface due to the existing inviscid discontinuities of the tangential velocity, and these maxima are quantitatively related to the thickness of the viscous boundary layer (VBL). At equilibrium, RDT suggests that the thickness of the T/NT interface scales on the Kolmogorov microscale. We acknowledge the financial support of FCT under Project PTDC/EME-MFE/099636/2008.

  1. Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

    International Nuclear Information System (INIS)

    Makino, Hisao; Song, Huaping; Yamamoto, Tetsuya

    2014-01-01

    The Ga-doped ZnO (GZO) films deposited on glass and c-plane sapphire substrates have been comparatively studied in order to explore the role of grain boundaries in electrical properties. The influences of oxygen gas flow rates (OFRs) during the deposition by ion-plating were examined. The dependences of carrier concentration, lattice parameters, and characteristic of thermal desorption of Zn on the OFR showed common features between glass and sapphire substrates, however, the Hall mobility showed different behavior. The Hall mobility of GZO films on glass increased with increasing OFR of up to 15 sccm, and decreased with further increasing OFR. On the other hand, the Hall mobility of GZO films on c-sapphire increased for up to 25 sccm. The role of grain boundary in polycrystalline GZO films has been discussed. - Highlights: • Ga-doped ZnO films were deposited on glass and c-sapphire by ion-plating. • The epitaxial growth on c-sapphire was confirmed by X-ray diffraction. • Dependence of Hall mobility showed different tendency between glass and sapphire. • Grain boundaries influence transport properties at high O 2 gas flow rate

  2. Description of Project Sapphire. Revision 1

    International Nuclear Information System (INIS)

    Taylor, R.G.

    1995-01-01

    The mission of Project Sapphire was to repackage approximately 600 kg of highly enriched uranium (HEU) in the Republic of Kazakhstan into internationally acceptable shipping packages and transport the material to a storage location in the United States. There were four material types to be repackaged: metal; oxide; uranium/beryllium (U/Be) alloy; and residues from U/Be alloy production. Seven major steps described in this report were necessary for successful execution of the project: planning and training; readiness assessment; deployment; set up; process; take down; and transport. Nuclear criticality safety especially affected several of these steps

  3. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

    2015-06-01

    Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

  4. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  5. Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

    2009-01-01

    In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

  6. Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

    Science.gov (United States)

    Chen, Hao; Zhang, Qi; Chou, Stephen Y

    2015-02-27

    Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

  7. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    Science.gov (United States)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  8. Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

    Science.gov (United States)

    Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

    2010-03-20

    We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

  9. Lattice dynamics of sapphire (corundum). Pt. 2

    International Nuclear Information System (INIS)

    Kappus, W.

    1975-01-01

    Theoretical models of the lattice dynamics of sapphire (α - Al 2 O 3 ), based on the assumption of rigid ions, have been fitted to measured phonons at the Gamma-point of the Brillouin zone. Short range interactions were taken into account by assuming 2-body interactions between touching ions. Additional 3-body interactions could not improve the fit significantly. Calculated dispersion curves are presented and compared with inelastic neutron scattering data. A good agreement for branches along the trigonal axis can be stated. (orig.) [de

  10. Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio, E-mail: ogino-toshio-rx@ynu.ac.jp

    2017-02-28

    Highlights: • Local hydrophobicity of phase-separated sapphire (0001) surfaces was investigated. • These surfaces are featured by coexistence of hydrophilic and hydrophobic domains. • Each domain was characterized by colloidal probe atomic force microscopy in water. • Both domains can be distinguished by adhesive forces of the probe to the surfaces. • Characterization in aqueous environment is important in bio-applications of sapphire. - Abstract: Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO{sub 2} probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

  11. Gas Gun Studies of Interface Wear Effects

    Science.gov (United States)

    Jackson, Tyler; Kennedy, Greg; Thadhani, Naresh

    2011-06-01

    The characteristics of interface wear were studied by performing gas gun experiments at velocities up to 1 km/s. The approach involved developing coefficients of constitutive strength models for Al 6061 and OFHC-Cu, then using those to design die geometry for interface wear gas gun experiments. Taylor rod-on-anvil impact experiments were performed to obtain coefficients of the Johnson-Cook constitutive strength model by correlating experimentally obtained deformed states of impacted samples with those predicted using ANSYS AUTODYN hydrocode. Simulations were used with validated strength models to design geometry involving acceleration of Al rods through a copper concentric cylindrical angular extrusion die. Experiments were conducted using 7.62 mm and 80 mm diameter gas guns. Differences in the microstructure of the interface layer and microhardness values illustrate that stress-strain conditions produced during acceleration of Al through the hollow concentric copper die, at velocities less than 800 m/s, result in formation of a layer via solid state alloying due to severe plastic deformation, while higher velocities produce an interface layer consisting of melted and re-solidified aluminum.

  12. Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

    International Nuclear Information System (INIS)

    Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

    2011-01-01

    Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

  13. Microscopic origin of the optical processes in blue sapphire.

    Science.gov (United States)

    Bristow, Jessica K; Parker, Stephen C; Catlow, C Richard A; Woodley, Scott M; Walsh, Aron

    2013-06-11

    Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

  14. Microscopic origin of the optical processes in blue sapphire

    OpenAIRE

    Bristow, JK; Parker, SC; Catlow, CRA; Woodley, SM; Walsh, A

    2013-01-01

    Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

  15. Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

    Directory of Open Access Journals (Sweden)

    Sheng-Fu Yu

    2012-01-01

    Full Text Available The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs grown on patterned sapphire substrates (PSSs with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%, 1.1 (57%, 1.5 (81%, and 1.9 (91% μm at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

  16. Sapphire/TiAl composites - structure and properties

    International Nuclear Information System (INIS)

    Povarova, K.B.; Antonova, A.V.; Mileiko, S.T.; Sarkissyan, N.S.

    2001-01-01

    Ti-Al-intermetallic-based alloys with lamellar microstructure, -γ(TiAl) +α 2 (Ti 3 Al) are characterized by a high melting point of 1460 o C, a low density of ∼3.9 g/cm 3 , a high gas corrosion resistance up to a temperature of about 900 o C, a high creep resistance up to a temperature of about 800 o C, and a sufficiently high fracture toughness at low temperatures, up to 30 Mpa x m 1/2 . Hence, they are considered as excellent matrices for fibres of high melting point. Unlike well-developed SiC/TiAl composites, which have an obvious upper limit for the usage temperature due to SiC/TiAl interaction, Sapphire/TiAl composites remain nearly unknown because fibres to be used in such composites have not been really available. At the present time, such fibres are developed in Solid State Physics Inst. of RAS. The results of preliminary creep tests of Al 2 O 3 /TiAl composites obtained by using pressure casting have shown that usage of such composite systems shifts the temperature limit for light structural materials in terms of creep resistance to, at least, 1050 o C: creep strength on 100 h time base reaches 120 MPa at that temperature. It occurs also that Sapphire-fibres/TiAl-matrix composite specimens have an increased gas corrosion resistance by more than one order of the magnitudes as compared with that of the matrix alloy. (author)

  17. Synthesis of titanium sapphire by ion implantation

    International Nuclear Information System (INIS)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

    1998-01-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

  18. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  19. Fabrication of Ternary AgPdAu Alloy Nanoparticles on c-Plane Sapphire by the Systematical Control of Film Thickness and Deposition Sequence

    Science.gov (United States)

    Kunwar, Sundar; Pandey, Puran; Sui, Mao; Bastola, Sushil; Lee, Jihoon

    2018-06-01

    In this work, a systematic study on the fabrication of ternary AgPdAu alloy nanoparticles (NPs) on c-plane sapphire (0001) is presented and the corresponding structural and optical characteristics are demonstrated. The metallic trilayers of various thicknesses and deposition orders are annealed in a controlled manner (400 °C to 900 °C) to induce the solid-state dewetting that yields the various structural configurations of AgPdAu alloy NPs. The dewetting of relatively thicker trilayers (15 nm) is gradually progressed with void nucleation, growth, and coalescence, isolated NP formation, and shape transformation, along with the temperature control. For 6 nm thickness, owing to the sufficient dewetting of trilayers along with enhanced diffusion, dense and small spherical alloy NPs are fabricated. Depending on the specific growth condition, the surface diffusion and interdiffusion of metal atoms, surface and interface energy minimization, Rayleigh instability, and equilibrium configuration are correlated to describe the fabrication of ternary alloy NPs. Ternary alloy NPs exhibit morphology-dependent ultraviolet-visible-near infrared (UV-VIS-NIR) reflectance properties such as the inverse relationship of average reflectance with the surface coverage, absorption enhancement in specific regions, and reflectance maxima in UV and NIR regions. In addition, Raman spectra depict the six active phonon modes of sapphires and their intensity and position modulation by the alloy NPs.

  20. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

    1976-01-01

    Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

  1. Detection of solar neutrinos with a torsion balance with sapphire crystal

    Science.gov (United States)

    Cruceru, M.; Nicolescu, G.

    2018-01-01

    The solar neutrinos (antineutrinos) are detected with a dedicated torsion balance in the case when they interact coherently on stiff crystals (sapphire with high Debye temperature ∼1000K and lead with ∼100K Debye temperature). The balance consists in two equal masses of lead and sapphire, of 25g. An autocollimator coupled to this balance measures small rotation angles of the balance. The force with which neutrino flux interacts with these crystals is between 10-5 dyn and 10-8 dyn, comparable with that reported in Weber’s experiments [1]. A diurnal effect is observed for solar neutrinos due to the rotation of the Earth around its own axes. The solar neutrino flux obtained at the site of our experiment is ∼3.8*1010neutrinos/cm2*s [2]. Experimental data for neutrinos signals from this high sensitivity torsion balance are presented and commented [3].

  2. Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

    2017-11-01

    The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

  3. Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

    International Nuclear Information System (INIS)

    Okada, Narihito; Tadatomo, Kazuyuki

    2012-01-01

    Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

  4. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  5. Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-08-01

    With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

  6. Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process

    Science.gov (United States)

    Nguyen, Tran Phu; Chuang, Hsiao-Tsun; Chen, Jyh-Chen; Hu, Chieh

    2018-02-01

    In this study, the effect of the power history on the shape of a sapphire crystal and the thermal stress during the Kyropoulos process are numerically investigated. The simulation results show that the thermal stress is strongly dependent on the power history. The thermal stress distributions in the crystal for all growth stages produced with different power histories are also studied. The results show that high von Mises stress regions are found close to the seed of the crystal, the highly curved crystal surface and the crystal-melt interface. The maximum thermal stress, which occurs at the crystal-melt interface, increases significantly in value as the crystal expands at the crown. After this, there is reduction in the maximum thermal stress as the crystal lengthens. There is a remarkable enhancement in the maximum von Mises stress when the crystal-melt interface is close to the bottom of the crucible. There are two obvious peaks in the maximum Von Mises stress, at the end of the crown stage and in the final stage, when cracking defects can form. To alleviate this problem, different power histories are considered in order to optimize the process to produce the lowest thermal stress in the crystal. The optimal power history is found to produce a significant reduction in the thermal stress in the crown stage.

  7. Development of Cr,Nd:GSGG laser as a pumping source of Ti:sapphire laser

    International Nuclear Information System (INIS)

    Tamura, Koji; Arisawa, Takashi

    1999-08-01

    Since efficiency of Cr,Nd doped gadolinium scandium gallium garnet (GSGG) laser is in principle higher than that of Nd:YAG laser, it can be a highly efficient pumping source for Ti:sapphire laser. We have made GSGG laser, and measured its oscillation properties. It was two times more efficient than Nd:YAG laser at free running mode operation. At Q-switched mode operation, fundamental output of 50 mJ and second harmonics output of 8 mJ were obtained. The developed laser had appropriate spatial profile, temporal duration, long time stability for solid laser pumping. Ti:sapphire laser oscillation was achieved by the second harmonics of GSGG laser. (author)

  8. Characterization of sapphire: For its material properties at high temperatures

    Science.gov (United States)

    Bal, Harman Singh

    There are numerous needs for sensing, one of which is in pressure sensing for high temperature application such as combustion related process and embedded in aircraft wings for reusable space vehicles. Currently, silicon based MEMS technology is used for pressure sensing. However, due to material properties the sensors have a limited range of approximately 600 °C which is capable of being pushed towards 1000 °C with active cooling. This can introduce reliability issues when you add more parts and high flow rates to remove large amounts of heat. To overcome this challenge, sapphire is investigated for optical based pressure transducers at temperatures approaching 1400 °C. Due to its hardness and chemical inertness, traditional cutting and etching methods used in MEMS technology are not applicable. A method that is being investigated as a possible alternative is laser machining using a picosecond laser. In this research, we study the material property changes that occur from laser machining and quantify the changes with the experimental results obtained by testing sapphire at high-temperature with a standard 4-point bending set-up.

  9. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  10. Electrical parameters of silicon on sapphire; influence on aluminium gate MOS devices performances

    International Nuclear Information System (INIS)

    Suat, J.P.; Borel, J.

    1976-01-01

    The question is the quality level of the substrate obtained with MOS technologies on silicon on an insulating substrate. Experimental results are presented on the main electrical parameters of MOS transistors made on silicon on sapphire, e.g. mean values and spreads of: threhold voltage and surface mobilities of transistors, breakdown voltages, and leakage currents of diodes. These devices have been made in three different technologies: enhancement P. channel technology, depletion-enhancement P. channel technology, and complementary MOS technology. These technologies are all aluminium gate processes with standard design rules and 5μm channel length. Measurements show that presently available silicon on sapphire can be considered as a very suitable substrate for many MOS digital applications (but not for dynamic circuits) [fr

  11. Gold wetting effects on sapphire irradiated with GeV uranium ions

    International Nuclear Information System (INIS)

    Ramos, S.M.M.

    1997-01-01

    Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

  12. Use of contact Nd:YAG sapphire-laser system for performing partial hepatectomy and splenectomy in dogs

    Science.gov (United States)

    Yu, Chibing; Jing, Shujuan; Cai, Huimin; Shao, Lanxing; Zou, Hegui

    1993-03-01

    An Nd:YAG Sapphire laser blade was used for performing hepatectomy and splenectomy in dogs. The results suggest that a laser blade provides a new way to reduce intraoperative bleeding and to minimize tissue damage. In recent years, there have been some reports on performing surgical procedures using a contact Nd:YAG Sapphire laser system. The current animal study was conducted in order to explore the capability of incision and excision of the laser tip, the damage to the tissue, and the recovery course.

  13. Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

    International Nuclear Information System (INIS)

    Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

    1995-01-01

    YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

  14. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  15. Subsonic leaky Rayleigh waves at liquid-solid interfaces.

    Science.gov (United States)

    Mozhaev, V G; Weihnacht, M

    2002-05-01

    The paper is devoted to the study of leaky Rayleigh waves at liquid-solid interfaces close to the border of the existence domain of these modes. The real and complex roots of the secular equation are computed for interface waves at the boundary between water and a binary isotropic alloy of gold and silver with continuously variable composition. The change of composition of the alloy allows one to cross a critical velocity for the existence of leaky waves. It is shown that, contrary to popular opinion, the critical velocity does not coincide with the phase velocity of bulk waves in liquid. The true threshold velocity is found to be smaller, the correction being of about 1.45%. Attention is also drawn to the fact that using the real part of the complex phase velocity as a velocity of leaky waves gives only approximate value. The most interesting feature of the waves under consideration is the presence of energy leakage in the subsonic range of the phase velocities where, at first glance, any radiation by harmonic waves is not permitted. A simple physical explanation of this radiation with due regard for inhomogeneity of radiated and radiating waves is given. The controversial question of the existence of leaky Rayleigh waves at a water/ice interface is reexamined. It is shown that the solution considered previously as a leaky wave is in fact the solution of the bulk-wave-reflection problem for inhomogeneous waves.

  16. Anisotropic diffusion of volatile pollutants at air-water interface

    Directory of Open Access Journals (Sweden)

    Li-ping Chen

    2013-04-01

    Full Text Available The volatile pollutants that spill into natural waters cause water pollution. Air pollution arises from the water pollution because of volatilization. Mass exchange caused by turbulent fluctuation is stronger in the direction normal to the air-water interface than in other directions due to the large density difference between water and air. In order to explore the characteristics of anisotropic diffusion of the volatile pollutants at the air-water interface, the relationship between velocity gradient and mass transfer rate was established to calculate the turbulent mass diffusivity. A second-order accurate smooth transition differencing scheme (STDS was proposed to guarantee the boundedness for the flow and mass transfer at the air-water interface. Simulations and experiments were performed to study the trichloroethylene (C2HCl3 release. By comparing the anisotropic coupling diffusion model, isotropic coupling diffusion model, and non-coupling diffusion model, the features of the transport of volatile pollutants at the air-water interface were determined. The results show that the anisotropic coupling diffusion model is more accurate than the isotropic coupling diffusion model and non-coupling diffusion model. Mass transfer significantly increases with the increase of the air-water relative velocity at a low relative velocity. However, at a higher relative velocity, an increase in the relative velocity has no effect on mass transfer.

  17. Time dependent temperature distribution in pulsed Ti:sapphire lasers

    Science.gov (United States)

    Buoncristiani, A. Martin; Byvik, Charles E.; Farrukh, Usamah O.

    1988-01-01

    An expression is derived for the time dependent temperature distribution in a finite solid state laser rod for an end-pumped beam of arbitrary shape. The specific case of end pumping by circular (constant) or Gaussian beam is described. The temperature profile for a single pump pulse and for repetitive pulse operation is discussed. The particular case of the temperature distribution in a pulsed titanium:sapphire rod is considered.

  18. Facet Appearance on the Lateral Face of Sapphire Single-Crystal Fibers during LHPG Growth

    Directory of Open Access Journals (Sweden)

    Liudmila D. Iskhakova

    2016-08-01

    Full Text Available Results of the study of the lateral surface of single-crystal (SC sapphire fibers grown along crystallographic directions [ 0001 ] and [ 11 2 ¯ 0 ] by the LHPG method are presented. The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is investigated. The microstructure of the samples is investigated with the help of an optical microscope and a JSM-5910LV scanning electronic microscope (JEOL. The crystallographic orientations of the facets on the SC sapphire fiber surface are determined by electron backscatter diffraction (EBSD. The seed orientation is studied by means of XRD techniques.

  19. Ultrafast, ultrahigh-peak power Ti:sapphire laser system

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

    2001-01-01

    We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

  20. Growth optimization for thick crack-free GaN layers on sapphire with HVPE

    Energy Technology Data Exchange (ETDEWEB)

    Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

    2005-05-01

    Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

    Directory of Open Access Journals (Sweden)

    Jaeyeong Lee

    2017-12-01

    Full Text Available The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages.

  2. High-rate sputter deposition of NiAl on sapphire fibers

    Energy Technology Data Exchange (ETDEWEB)

    Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

    2002-07-01

    Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

  3. In situ speciation of the functional groups at mineral/electrolyte interfaces by sum frequency vibrational spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Floersheimer, M.; Kruse, K.; Klenze, R.; Kim, J.I. [Institut fuer Nukleare Entsorgung, Forschungszentrum Karlsruhe, Postfach 3640, D-76021 Karlsruhe (Germany); Fanghaenel, Th. [Institut fuer Nukleare Entsorgung, Forschungszentrum Karlsruhe, Postfach 3640, D-76021 Karlsruhe (Germany); Physikalisch-Chemisches Institut, Ruprecht-Karls-Universitaet Heidelberg, Im Neuenheimer Feld 253, D-69120, Heidelberg (Germany)

    2005-07-01

    Full text of publication follows: In order to describe surface reactivity and adsorption/desorption processes on the molecular level, a large number of functional groups has been postulated. In most cases, however, a direct proof for the existence of these species in real aquatic environment is lacking because it is difficult to obtain chemical analytical information in situ under electrolyte with interface selectivity. Here we apply interface selective sum frequency (SF) vibrational spectroscopy to study the (001) and (110) surfaces of sapphire ({alpha}-Al{sub 2}O{sub 3}) under water between pH 4 and 12. This work is part of an ongoing fundamental study of the sorption mechanism of actinides on single crystals faces of sapphire by various experimental and theoretical techniques. Sapphire is used as a simple model for natural clay minerals and related iron phases. In the O-H stretch region of the infrared spectrum between 2800 and 4000 cm{sup -1}, we observe a surprisingly large number of 8 SF bands in total. Two of them are due to the polar ordered water film near the mineral surface which is well known from various aquatic interfaces. The other bands originate from up to 6 different aluminol species or from specifically [1] bound water molecules. The prominent peak of the (001) surface (SF intensity maximum at 3690 cm{sup -1}), we attribute to an OH species bridging two [1-4] aluminium atoms. At the (110) surface, the concentration of this species is considerably smaller. Another aluminol species that can be detected at the (001) and the (110) surface (signal maximum near 3450 cm{sup -1}) exhibits O-H bonds which are almost parallel to the interface plane. This species is probably the in-plane aluminol group predicted in recent molecular dynamics calculations [4]. SF spectroscopy allows us also to measure the absolute polar orientation of the water molecules adjacent to the mineral surface. The inversion of the molecules polar orientation upon alteration of the p

  4. Erbium medium temperature localised doping into lithium niobate and sapphire: A comparative study

    Czech Academy of Sciences Publication Activity Database

    Nekvindová, P.; Macková, Anna; Peřina, Vratislav; Červená, Jarmila; Čapek, P.; Schrofel, J.; Špirková, J.; Oswald, Jiří

    90-91, - (2003), s. 559-564 ISSN 1012-0394 Institutional research plan: CEZ:AV0Z1048901 Keywords : lithium niobate * sapphire * erbium Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.687, year: 2003

  5. Photonics of 2D gold nanolayers on sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Nabatov, B. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation); Konovko, A. A.; Belov, I. V.; Gizetdinov, R. M.; Andreev, A. V. [Moscow State University (Russian Federation); Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    Gold layers with thicknesses of up to several nanometers, including ordered and disordered 2D nanostructures of gold particles, have been formed on sapphire substrates; their morphology is described; and optical investigations are carried out. The possibility of increasing the accuracy of predicting the optical properties of gold layers and 2D nanostructures using quantum-mechanical models based on functional density theory calculation techniques is considered. The application potential of the obtained materials in photonics is estimated.

  6. Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

    International Nuclear Information System (INIS)

    Lee, Y.J.; Hsu, T.C.; Kuo, H.C.; Wang, S.C.; Yang, Y.L.; Yen, S.N.; Chu, Y.T.; Shen, Y.J.; Hsieh, M.H.; Jou, M.J.; Lee, B.J.

    2005-01-01

    InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis

  7. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  8. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  9. Optical third-harmonic generation using ultrashort laser pulses

    International Nuclear Information System (INIS)

    Stoker, D.; Keto, J.W.; Becker, M.F.

    2005-01-01

    To better predict optical third-harmonic generation (THG) in transparent dielectrics, we model a typical ultrashort pulsed Gaussian beam, including both group velocity mismatch and phase mismatch of the fundamental and harmonic fields. We find that competition between the group velocity mismatch and phase mismatch leads to third-harmonic generation that is sensitive only to interfaces. In this case, the spatial resolution is determined by the group velocity walk-off length. THG of modern femtosecond lasers in optical solids is a bulk process, without a surface susceptibility, but bears the signature of a surface enhancement effect in z-scan measurements. We demonstrate the accuracy of the model, by showing the agreement between the predicted spectral intensity and the measured third-harmonic spectrum from a thin sapphire crystal

  10. Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

    Science.gov (United States)

    Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

    2018-01-01

    Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

  11. Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

    2015-10-30

    Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

  12. Research and development of photovoltaic power system. Characterization and control of surface/interface recombination velocity of crystalline silicon thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Silicon kessho usumaku ni okeru hyomen kaimen saiketsugo sokudo no hyoka to seigyo

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, H [Hokkaido University, Sapporo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on characterization and control of surface/interface recombination velocity of crystalline silicon thin films. To optimize design and manufacture of solar cells, it is necessary to identify correctly resistance factor (or doping) of bulk of materials, bulk minority carrier life, and recombination velocity on surface, passivation interface and electrode interface. A group in the Hokkaido University has been working since a few years ago on development of non-contact and non-destructive photo-luminescence surface level spectroscopy (PLS{sup 3}). A new non-contact C-V method was also introduced. Using these methods, basic discussions were given on possibility of separate measurements on surface/interface and bulk characteristics of solar cell materials. The PLS{sup 3} method and the non-contact C-V method were used for experimental discussions on evaluation of silicon mono-crystalline and poly-crystalline materials. Discussions were given on separate evaluations by using the DLTS method. 10 figs., 2 tabs.

  13. Studying the instantaneous velocity field in gas-sheared liquid films in a horizontal duct

    Science.gov (United States)

    Vasques, Joao; Tokarev, Mikhail; Cherdantsev, Andrey; Hann, David; Hewakandamby, Buddhika; Azzopardi, Barry

    2016-11-01

    In annular flow, the experimental validation of the basic assumptions on the liquid velocity profile is vital for developing theoretical models of the flow. However, the study of local velocity of liquid in gas-sheared films has proven to be a challenging task due to the highly curved and disturbed moving interface of the phases, small scale of the area of interrogation, high velocity gradients and irregular character of the flow. This study reports on different optical configurations and interface-tracking methods employed in a horizontal duct in order to obtain high-resolution particle image velocimetry (PIV) data in such types of complex flows. The experimental envelope includes successful measurements in 2D and 3D waves regimes, up to the disturbance wave regime. Preliminary data show the presence of complex structures in the liquid phase, which includes re-circulation areas below the liquid interface due to the gas-shearing action, together with non-uniform transverse movements of the liquid phase close to the wall due to the presence of 3D waves at the interface. With the aid of the moving interface-tracking, PIV, time-resolved particle-tracking velocimetry and vorticity measurements were performed.

  14. Superconducting accelerometer using niobium-on-sapphire rf resonator

    International Nuclear Information System (INIS)

    Blair, D.G.

    1979-01-01

    An accelerometer is described which uses a rf niobium-on-sapphire resonator as its sensor element. The accelerometer uses a magnetically levitated spool as a test mass and the spool modulates the inductance of the resonator; its position is servo controlled to maintain the resonator at the external rf excitation frequency. The accelerometer has high sensitivity over the full audio frequency range, but is optimized for frequencies between 100 Hz and 1 kHz, where the calculated displacement sensitivity approaches 10 -15 cm for a 1 Hz measurement bandwidth. The system noise sources are analyzed and possible improvements are discussed

  15. Analysis of the effect of the fluid-structure interface on elastic wave velocity in cornea-like structures by OCE and FEM

    International Nuclear Information System (INIS)

    Han, Zhaolong; Li, Jiasong; Singh, Manmohan; Wu, Chen; Liu, Chih-hao; Raghunathan, Raksha; Larin, Kirill V; Vantipalli, Srilatha; Aglyamov, Salavat R; Twa, Michael D

    2016-01-01

    Air-pulse optical coherence elastography (OCE) is a promising technique for quantifying biomechanical properties of the cornea. This technique typically involves imaging and analysis of the propagation of the air-pulse induced elastic waves to reconstruct corneal biomechanical properties using an analytical model. However, the effect of the fluid-structure interface (FSI) at the corneal posterior surface on the elastic wave velocity is not accounted for in many models. In this study, we examined the effect of the FSI with OCE experiments on contact lenses with and without fluid in the posterior gap. Finite element models (FEM), also with and without the FSI, were constructed to simulate the elastic wave propagation based on the OCE measurements. The FEM and OCE results were in good agreement demonstrating the feasibility of the method. To further investigate the effect of the FSI, OCE experiments and subsequent FEM simulations were conducted on in situ rabbit corneas before and after rose bengal/green light corneal collagen cross-linking (RGX). Both the OCE experiments and the FE simulations demonstrated that the FSI significantly reduced the group velocity of the elastic wave, and thus, should be considered when determining corneal biomechanical properties from an appropriate mechanical model. By matching the FEM-calculated velocity to the OCE-measured velocity, the corneal elasticity was quantified. The Young’s modulus of the rabbit cornea before RGX was E  =  65  ±  10 kPa at a controlled intraocular pressure (IOP) of 15 mmHg. After RGX, the Young’s modulus increased to E  =  102  ±  7 kPa at the same IOP. (letter)

  16. "You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

    Science.gov (United States)

    Pappas, Christine

    2007-01-01

    Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

  17. Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

    Science.gov (United States)

    Cheng, Zongzhe; Hanke, Michael; Vogt, Patrick; Bierwagen, Oliver; Trampert, Achim

    2017-10-01

    Heteroepitaxial Ga2O3 was deposited on c-plane and a-plane oriented sapphire by plasma-assisted molecular beam epitaxy and probed by ex-situ and in-situ synchrotron-based x-ray diffraction. The investigation on c-plane sapphire determined a critical thickness of around 33 Å, at which the monoclinic β-phase forms on top of the hexagonal α-phase. A 143 Å thick single phase α-Ga2O3 was observed on a-plane sapphire, much thicker than the α-Ga2O3 on c-plane sapphire. The α-Ga2O3 relaxed very fast in the first 30 Å in both out-of-plane and in-plane directions as measured by the in-situ study.

  18. The Laser Damage Threshold for Materials and the Relation Between Solid-Melt and Melt-Vapor Interface Velocities

    International Nuclear Information System (INIS)

    Khalil, Osama Mostafa

    2010-01-01

    Numerous experiments have demonstrated and analytic theories have predicted that there is a threshold for pulsed laser ablation of a wide range of materials. Optical surface damage threshold is a very complex and important application of high-power lasers. Optical damage may also be considered to be the initial phase of laser ablation. In this work it was determined the time required and the threshold energy of a layer of thickness to heat up. We used the Finite Difference method to simulate the process of laser-target interaction in three cases. Namely, the case before melting begins using a continuous wave (c.w) laser source and a pulsed laser source, the case after the first change of state (from solid to melt), and the case after the second change of state (from melt to vapor). And also study the relation between the solid-melt and melt-vapor interface velocities to have a commonsense of the laser ablation process.

  19. Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

    Science.gov (United States)

    Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

    2017-06-01

    Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

  20. Dielectric haloscopes: sensitivity to the axion dark matter velocity

    Energy Technology Data Exchange (ETDEWEB)

    Millar, Alexander J.; Redondo, Javier; Steffen, Frank D., E-mail: millar@mpp.mpg.de, E-mail: jredondo@unizar.es, E-mail: steffen@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany)

    2017-10-01

    We study the effect of the axion dark matter velocity in the recently proposed dielectric haloscopes, a promising avenue to search for well-motivated high mass (40–400 μeV) axions. We describe non-zero velocity effects for axion-photon mixing in a magnetic field and for the phenomenon of photon emission from interfaces between different dielectric media. As velocity effects are only important when the haloscope is larger than about 20% of the axion de Broglie wavelength, for the planned MADMAX experiment with 80 dielectric disks the velocity dependence can safely be neglected. However, an augmented MADMAX or a second generation experiment would be directionally sensitive to the axion velocity, and thus a sensitive measure of axion astrophysics.

  1. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  2. High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

    Science.gov (United States)

    Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

    2018-03-01

    Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

  3. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

    International Nuclear Information System (INIS)

    Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

    2008-01-01

    This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

    2014-09-30

    This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

  6. Epitactical FeAl films on sapphire and their magnetic properties

    International Nuclear Information System (INIS)

    Trautvetter, Moritz

    2011-01-01

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  7. A Novel Method for Measurements of the Penetration Depth of MgB2 Superconductor Films by Using Sapphire Resonators with Short-Circuited Parallel Plates

    International Nuclear Information System (INIS)

    Jung, Ho Sang; Lee, J. H.; Cho, Y. H.; Lee, Sang Young; Seong, W. K.; Lee, N. H.; Kang, W. N.

    2009-01-01

    We introduce a measurement method that enables to measure the penetration depth(λ) of superconductor films by using a short-ended parallel plate sapphire resonator. Variations in the (λof MgB 2 films could be measured down to the lowest temperature using a sapphire resonator with a YBa 2 Cu 3 O 7-x film at the bottom. A model equation of λλ 0 [1-(T/T c ) τ ] -1/2 for MgB 2 films appeared to describe the observed variations of the resonant frequency of the sapphire resonator with temperature, with λ 0 , τ and T c used as the fitting parameters.

  8. Statistics of the turbulent/non-turbulent interface in a spatially evolving mixing layer

    KAUST Repository

    Cristancho, Juan

    2012-12-01

    The thin interface separating the inner turbulent region from the outer irrotational fluid is analyzed in a direct numerical simulation of a spatially developing turbulent mixing layer. A vorticity threshold is defined to detect the interface separating the turbulent from the non-turbulent regions of the flow, and to calculate statistics conditioned on the distance from this interface. Velocity and passive scalar statistics are computed and compared to the results of studies addressing other shear flows, such as turbulent jets and wakes. The conditional statistics for velocity are in remarkable agreement with the results for other types of free shear flow available in the literature. In addition, a detailed analysis of the passive scalar field (with Sc 1) in the vicinity of the interface is presented. The scalar has a jump at the interface, even stronger than that observed for velocity. The strong jump for the scalar has been observed before in the case of high Schmidt number, but it is a new result for Schmidt number of order one. Finally, the dissipation for the kinetic energy and the scalar are presented. While the kinetic energy dissipation has its maximum far from the interface, the scalar dissipation is characterized by a strong peak very close to the interface.

  9. The SCEC Unified Community Velocity Model (UCVM) Software Framework for Distributing and Querying Seismic Velocity Models

    Science.gov (United States)

    Maechling, P. J.; Taborda, R.; Callaghan, S.; Shaw, J. H.; Plesch, A.; Olsen, K. B.; Jordan, T. H.; Goulet, C. A.

    2017-12-01

    Crustal seismic velocity models and datasets play a key role in regional three-dimensional numerical earthquake ground-motion simulation, full waveform tomography, modern physics-based probabilistic earthquake hazard analysis, as well as in other related fields including geophysics, seismology, and earthquake engineering. The standard material properties provided by a seismic velocity model are P- and S-wave velocities and density for any arbitrary point within the geographic volume for which the model is defined. Many seismic velocity models and datasets are constructed by synthesizing information from multiple sources and the resulting models are delivered to users in multiple file formats, such as text files, binary files, HDF-5 files, structured and unstructured grids, and through computer applications that allow for interactive querying of material properties. The Southern California Earthquake Center (SCEC) has developed the Unified Community Velocity Model (UCVM) software framework to facilitate the registration and distribution of existing and future seismic velocity models to the SCEC community. The UCVM software framework is designed to provide a standard query interface to multiple, alternative velocity models, even if the underlying velocity models are defined in different formats or use different geographic projections. The UCVM framework provides a comprehensive set of open-source tools for querying seismic velocity model properties, combining regional 3D models and 1D background models, visualizing 3D models, and generating computational models in the form of regular grids or unstructured meshes that can be used as inputs for ground-motion simulations. The UCVM framework helps researchers compare seismic velocity models and build equivalent simulation meshes from alternative velocity models. These capabilities enable researchers to evaluate the impact of alternative velocity models in ground-motion simulations and seismic hazard analysis applications

  10. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D., E-mail: dupuis@gatech.edu [Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (United States); Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael [Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623 (Germany)

    2014-10-06

    Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm{sup 2} and 95 kW/cm{sup 2} at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

  11. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

    International Nuclear Information System (INIS)

    Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael

    2014-01-01

    Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm 2 and 95 kW/cm 2 at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

  12. Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

    Science.gov (United States)

    Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

    2017-05-01

    Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

  13. Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

    International Nuclear Information System (INIS)

    Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

    1986-01-01

    This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

  14. Role of wall-attached structures in the interface of the quiescent core region in turbulent pipe flow

    Science.gov (United States)

    Yang, Jongmin; Hwang, Jinyul; Sung, Hyung Jin

    2017-11-01

    The effects of low- and high-speed structures on the interface of the quiescent core region are explored using direct numerical simulation data of turbulent pipe flow. The quiescent core region is a uniform momentum zone located at the center of the pipe flow, which contains the highest streamwise momentum with a low level of turbulence. The interface of the quiescent core region can be identified from the probability density function of the streamwise modal velocity. In the vicinity of the interface of the quiescent core region, the streamwise velocity changes abruptly. The abrupt jump in velocity causes an increase of the velocity gradient. The interface of the quiescent core region is similar to the laminar superlayer in turbulent/non-turbulent interface. The interface of the quiescent core region contains the low- and high-speed structures. They can be classified into wall-attached and detached structures depending on the distance between the structures and the wall. The influence of the detached structures accounted for most of the number of detected structures is negligible due to its small volume. Conversely, the wall-attached structures adjacent to the interface have a huge influence on the statistical amount of the interface, such as entrainment characteristics. This work was supported by the Creative Research Initiatives (No. 2017-013369) program of the National Research Foundation of Korea (MSIP).

  15. The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

    2004-09-01

    The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Structural properties of Pt/TiO{sub 2}/Pt heterostructure grown on sapphire substrate—Influence of annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Roch, Tomas, E-mail: roch@fmph.uniba.sk; Durina, Pavol; Grancic, Branislav; Gregor, Maros; Plecenik, Tomas; Truchly, Martin; Mikula, Marian; Satrapinskyy, Leonid; Kus, Peter; Plecenik, Andrej

    2014-09-01

    Highlights: • Pt/TiO{sub 2}/Pt, Pt/TiO{sub 2} and TiO{sub 2}/Pt stacks were grown on (c-cut) Al{sub 2}O{sub 3} and annealed at 600 °C. • Pt/TiO{sub 2}/Pt contains both TiO{sub 2}-anatase (27%) and rutile (73%) phases after annealing. • Pt/TiO{sub 2} contains both anatase and rutile, TiO{sub 2}/Pt anatase phase only. • Epitaxial relationship of bottom platinum: Pt(1 1 1)[1–10]||sub(0 0 0 1)[11{sup ¯}00]. • Platinum top layer is uniaxially oriented: Pt(1 1 1)||sub(0 0 0 1). - Abstract: Simple gas sensors based on resistivity change of TiO{sub 2} thin films using combined top and bottom metallic contacts are very promising. In this work influence of ex situ annealing in ambient air on structure of TiO{sub 2} thin film stacked between two platinum contact layers has been studied. The layers were deposited using DC magnetron sputtering on unheated c-cut sapphire substrates. For lowering of the Schottky barrier at the Pt–TiO{sub 2} interfaces and for improved crystalline stability, ex situ annealing at 600 °C in air was carried out. In order to study separately influence of top and bottom platinum layers on crystal structure, also reference samples Pt/TiO{sub 2}/Al{sub 2}O{sub 3} and TiO{sub 2}/Pt/Al{sub 2}O{sub 3} have been prepared. Non-ambient X-ray diffraction measurement during annealing process and X-ray pole figures after annealing has been measured. Near epitaxial relationship was observed for bottom Pt layer grown on c-cut sapphire substrate: Pt(1 1 1)[11{sup ¯}0]||Al{sub 2}O{sub 3}(0 0 0 1)[11{sup ¯}00]. Inner titania layer shows randomly oriented both TiO{sub 2}-rutile (R) and anatase (A) phases with the volumetric ratio of R/A ∼ 2.7. If prepared without top Pt contact layer, the TiO{sub 2} transforms during annealing to random single anatase phase. The TiO{sub 2} layer overgrown with only single Pt top contact layer shows randomly oriented both rutile and anatase phases with volumetric ratio R/A ∼ 2.3. The top Pt layer on TiO{sub 2

  17. Interface waves propagating along tensile fractures in dolomite

    International Nuclear Information System (INIS)

    Roy, S.; Pyrak-Nolte, L.J.

    1995-01-01

    Elastic interface waves have been observed in induced tensile fractures in dolomite rock cores. Multiscaling wavelet analysis distinguishes the interface wave from bulk shear waves, quantifies the interface wave spectral content, and determines the arrival time of peak energy. The dominant seismic energy is concentrated in the slow interface wave, with little or no detectable energy in the fast wave. As stress across the fracture increases, the slow interface wave velocity increases, and the frequency of the spectral peak shifts to higher frequencies. The shear dynamic specific stiffness of the fracture was calculated from the peak energy arrival time as a function of stress. 13 refs., 5 figs., 1 tab

  18. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors a...... as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate....

  19. Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

    Science.gov (United States)

    Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

    2018-01-01

    An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

  20. 16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Misuse of the words âruby,â âsapphire,â... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc. (a) It is unfair or deceptive to use the unqualified words “ruby,” “sapphire...

  1. Structural characterization of AgGaTe{sub 2} layers grown on a- and c-sapphire substrates by a closed space sublimation method

    Energy Technology Data Exchange (ETDEWEB)

    Uruno, Aya; Usui, Ayaka [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2014-07-15

    AgGaTe{sub 2} layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe{sub 2} layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag{sub 5}Te{sub 3} was formed along with the AgGaTe{sub 2} when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe{sub 2} without Ag{sub 5}Te{sub 3} layers could be grown on a-plane sapphire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Subcritical crack growth along polymer interfaces

    Science.gov (United States)

    Gurumurthy, Charavana Kumara

    2000-10-01

    The adhesion characteristics have been investigated for a polyimide (PI)/model epoxy (ME) interface that is important for microelectronic applications. The fracture toughness (G*c) of this interface has been measured using an asymmetric double cantilever beam (ADCB) technique. The G*c is low, 10-25 J/m 2, and is sensitive to the mechanical phase angle psi. A modified ADCB setup has been used to measure the subcritical crack growth velocity v due to the stress-assisted water attack (SAWA) at various relative humidities (RH) and temperatures (T) as a function of its driving force (the strain energy release rate) G*. The threshold G* decreases remarkably. Above the threshold log v rises linearly with √ G* (a hydrolysis controlled regime) but then enters a regime where the crack velocity is almost independent of √G*, i.e., v = v* (a transport controlled regime). A model for SAWA has been developed based on thermally-activated kinetics for hydrolysis of the ester covalent bonds that bridge from one side to the other of the interface. A new technique has been developed for the determination of the fatigue crack growth under thermal (T) and hydro-thermal (HT) conditions as a function of the range in the strain energy release rate (DeltaG). Under T-fatigue, the fatigue crack growth per unit temperature cycle (da/dN) increases as a power of DeltaG, i.e., a Paris law relationship holds. The HT da/dN measured is higher than da/dN under T-fatigue conditions and has been successfully modeled as a summation of two components: (a) the da/dN due to T-fatigue and (b) the da/dN due to the SAWA along the interface for a given T-cycle. A surface modification procedure that converts a thin interpenetrated by a solvent cast ME is used to strengthen ME/PI interface. The G* c increases with the interpenetration distance w. Increasing w also improves the resistance of the PI/ME interface to SAWA with the threshold G* increasing and the water transport controlled velocity (v

  3. Secondary electron emission of sapphire tungsten molybdenum and titanium for Maxwellian incident electrons

    International Nuclear Information System (INIS)

    Saussez-Hublet, M.-C.; Harbour, P.J.

    1980-06-01

    The second electron emission coefficient of various materials, namely titanium, molybdenum, tungsten and sapphire, has been calculated for a Maxwellian energy distribution from data for a normally incident monoenergetic beam of primary electrons. The most significant difference from the monoenergetic case occurs at low energies. In addition the influence of the incident angle of the electrons is discussed. (author)

  4. Evaluation of interlayer interfacial stiffness and layer wave velocity of multilayered structures by ultrasonic spectroscopy.

    Science.gov (United States)

    Ishii, Yosuke; Biwa, Shiro

    2014-07-01

    An ultrasonic evaluation procedure for the interlayer interfacial normal stiffness and the intralayer longitudinal wave velocity of multilayered plate-like structures is proposed. Based on the characteristics of the amplitude reflection spectrum of ultrasonic wave at normal incidence to a layered structure with spring-type interlayer interfaces, it is shown that the interfacial normal stiffness and the longitudinal wave velocity in the layers can be simultaneously evaluated from the frequencies of local maxima and minima of the spectrum provided that all interfaces and layers have the same properties. The effectiveness of the proposed procedure is investigated from the perspective of the sensitivity of local extremal frequencies of the reflection spectrum. The feasibility of the proposed procedure is also investigated when the stiffness of each interface is subjected to small random fluctuations about a certain average value. The proposed procedure is applied to a 16-layered cross-ply carbon-fiber-reinforced composite laminate. The normal stiffness of resin-rich interfaces and the longitudinal wave velocity of plies in the thickness direction evaluated from the experimental reflection spectrum are shown to be consistent with simple theoretical estimations.

  5. An All-Solid-State High Repetiton Rate Titanium:Sapphire Laser System For Resonance Ionization Laser Ion Sources

    Science.gov (United States)

    Mattolat, C.; Rothe, S.; Schwellnus, F.; Gottwald, T.; Raeder, S.; Wendt, K.

    2009-03-01

    On-line production facilities for radioactive isotopes nowadays heavily rely on resonance ionization laser ion sources due to their demonstrated unsurpassed efficiency and elemental selectivity. Powerful high repetition rate tunable pulsed dye or Ti:sapphire lasers can be used for this purpose. To counteract limitations of short pulse pump lasers, as needed for dye laser pumping, i.e. copper vapor lasers, which include high maintenance and nevertheless often only imperfect reliability, an all-solid-state Nd:YAG pumped Ti:sapphire laser system has been constructed. This could complement or even replace dye laser systems, eliminating their disadvantages but on the other hand introduce shortcomings on the side of the available wavelength range. Pros and cons of these developments will be discussed.

  6. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles

  7. Optical measurement of interface movements of liquid metal excited by a pneumatic shaker

    Science.gov (United States)

    Men, Shouqiang; Zhou, Jun; Xu, Jingwen

    2015-02-01

    A model experiment was designed, and Faraday instabilities were generated in a plexiglass cylinder excited by a pneumatic shaker. A contacting distance meter and a single-point fiber-optic vibrometer were applied to measure the displacement/velocity of the shaker, both of the results are in good agreement with each other. Besides, the fibre-optic laser vibrometer was exploited to measure the velocity of the interface between potassium hydroxide aqueous solution and Galinstan. It shows that the fibre-optic vibrometer can be applied to measure the interface movements without Faraday instabilities, whereas there are strong scatter and the interface displacement can only be obtained qualitatively. In this case, a scanning vibrometer or a high-speed CCD camera should be used to record the interface movements.

  8. Vision-Based Interfaces Applied to Assistive Robots

    Directory of Open Access Journals (Sweden)

    Elisa Perez

    2013-02-01

    Full Text Available This paper presents two vision-based interfaces for disabled people to command a mobile robot for personal assistance. The developed interfaces can be subdivided according to the algorithm of image processing implemented for the detection and tracking of two different body regions. The first interface detects and tracks movements of the user's head, and these movements are transformed into linear and angular velocities in order to command a mobile robot. The second interface detects and tracks movements of the user's hand, and these movements are similarly transformed. In addition, this paper also presents the control laws for the robot. The experimental results demonstrate good performance and balance between complexity and feasibility for real-time applications.

  9. CMOS Silicon-on-Sapphire RF Tunable Matching Networks

    Directory of Open Access Journals (Sweden)

    Chamseddine Ahmad

    2006-01-01

    Full Text Available This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

  10. Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

    Directory of Open Access Journals (Sweden)

    Marsetio Noorprajuda

    2018-04-01

    Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

  11. Origin for the shape of Au small crystals formed inside sapphire by ion implantation

    International Nuclear Information System (INIS)

    Ohkubo, M.; Hioki, T.

    1989-01-01

    In ion-implanted oxides, precipitation is usually formed except the case of forming solid solution. The precipitation comprises the metallic particles of implanted atoms, the oxide of implanted atoms, the metal of matrix elements, the compound of implanted atoms and matrix and so on. In particular, the metallic particles of implanted atoms are frequently faceted. From the facets, the equilibrium shape of crystals can be imagined. The equilibrium shape is determined so that the surface free energy is to be minimized. However, the shape of the metallic particles precipitated inside oxides should not be such equilibrium shape because they come in contact with foreign crystals. As the result, in the precipitation phenomena induced by ion implantation, the crystal structures of precipitated particles and substrates, the crystallographic relation between two crystals, interfacial energy and so on must be taken in consideration. In this paper, the report is made on the shape of the metallic gold particles formed inside sapphires by ion implantation that it was caused by only the crystal habit of sapphires regardless of the above-mentioned complexity. (K.I.)

  12. Second Breakdown Susceptibility of Silicon-On-Sapphire Diodes having Systematically Different Geometries.

    Science.gov (United States)

    1980-05-30

    Sunshine’s experiments less enlight - ening than they might otherwise have been. First, changes in optical transmittance could not be correlated directly to...silicon- on-sapphire technology ) and the orientation of the silicon surface ex- posed to the oxide layer44 ,46 ,4 7,51. Not enough data were taken to at...success. With rapid progress of semi- conductor technology , such simplified and largely intuitive methods proved to be inadequate for dealing with

  13. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  14. Influence of interface scattering on shock waves in heterogeneous solids

    International Nuclear Information System (INIS)

    Zhuang Shiming; Ravichandran, Guruswami; Grady, Dennis E.

    2002-01-01

    In heterogeneous media, the scattering due to interfaces between dissimilar materials play an important role in shock wave dissipation and dispersion. In this work the influence of interface scattering effect on shock waves was studied by impacting flyer plates onto periodically layered polycarbonate/6061 aluminum, polycarbonate/304 stainless steel and polycarbonate/glass composites. The experimental results (using VISAR and stress gauges) indicate that the rise time of the shock front decreases with increasing shock strength, and increases with increasing mechanical impedance mismatch between layers; the strain rate at the shock front increases by about the square of the shock stress. Experimental and numerical results also show that due to interface scattering effect the shock wave velocity in periodically layered composites decreases. In some cases the shock velocity of a layered heterogeneous composite can be lower than that of either of its components

  15. Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

    Science.gov (United States)

    Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

    2012-05-21

    Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

  16. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

    Science.gov (United States)

    Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

    2016-11-21

    The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

  17. Slow rupture of frictional interfaces

    Science.gov (United States)

    Bar Sinai, Yohai; Brener, Efim A.; Bouchbinder, Eran

    2012-02-01

    The failure of frictional interfaces and the spatiotemporal structures that accompany it are central to a wide range of geophysical, physical and engineering systems. Recent geophysical and laboratory observations indicated that interfacial failure can be mediated by slow slip rupture phenomena which are distinct from ordinary, earthquake-like, fast rupture. These discoveries have influenced the way we think about frictional motion, yet the nature and properties of slow rupture are not completely understood. We show that slow rupture is an intrinsic and robust property of simple non-monotonic rate-and-state friction laws. It is associated with a new velocity scale cmin, determined by the friction law, below which steady state rupture cannot propagate. We further show that rupture can occur in a continuum of states, spanning a wide range of velocities from cmin to elastic wave-speeds, and predict different properties for slow rupture and ordinary fast rupture. Our results are qualitatively consistent with recent high-resolution laboratory experiments and may provide a theoretical framework for understanding slow rupture phenomena along frictional interfaces.

  18. α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

    Science.gov (United States)

    Roberts, J. W.; Jarman, J. C.; Johnstone, D. N.; Midgley, P. A.; Chalker, P. R.; Oliver, R. A.; Massabuau, F. C.-P.

    2018-04-01

    α-Ga2O3 is a metastable phase of Ga2O3 of interest for wide bandgap engineering since it is isostructural with α-In2O3 and α-Al2O3. α-Ga2O3 is generally synthesised under high pressure (several GPa) or relatively high temperature (∼500 °C). In this study, we report the growth of α-Ga2O3 by low temperature atomic layer deposition (ALD) on sapphire substrate. The film was grown at a rate of 0.48 Å/cycle, and predominantly consists of α-Ga2O3 in the form of (0001) -oriented columns originating from the interface with the substrate. Some inclusions were also present, typically at the tips of the α phase columns and most likely comprising ε-Ga2O3. The remainder of the Ga2O3 film - i.e. nearer the surface and between the α-Ga2O3 columns, was amorphous. The film was found to be highly resistive, as is expected for undoped material. This study demonstrates that α-Ga2O3 films can be grown by low temperature ALD and suggests the possibility of a new range of ultraviolet optoelectronic and power devices grown by ALD. The study also shows that scanning electron diffraction is a powerful technique to identify the different polymorphs of Ga2O3 present in multiphase samples.

  19. Optical-fiber interferometer for velocity measurements with picosecond resolution

    International Nuclear Information System (INIS)

    Weng Jidong; Tan Hua; Wang Xiang; Ma Yun; Hu Shaolou; Wang Xiaosong

    2006-01-01

    The conventional Doppler laser-interference velocimeters are made up of traditional optical elements such as lenses and mirrors and will generally restrict its applications in multipoint velocity measurements. By transfering the light from multimode optical fiber to single-mode optical fiber and using the currently available conventional telecommunications elements, the authors have constructed a velocimeter called all-fiber displacement interferometer system for any reflector. The unique interferometer system is only made up of fibers or fiber-coupled components. The viability of this technique is demonstrated by measuring the velocity of an interface moving at velocity of 2133 m/s with 50 ps time resolution. In addition, the concept of optical-fiber mode conversion would provide a way to develop various optical-fiber sensors

  20. High energy iron ion implantation into sapphire

    International Nuclear Information System (INIS)

    Allen, W.R.; Pedraza, D.F.

    1990-01-01

    Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

  1. Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

    International Nuclear Information System (INIS)

    Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

    1999-01-01

    A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

  2. 78 FR 56691 - Sapphire Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes...

    Science.gov (United States)

    2013-09-13

    ... Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes Request for... Sapphire Power Marketing LLC's application for market-based rate authority, with an accompanying rate... submission of protests and interventions in lieu of paper, using the FERC Online links at http://www.ferc.gov...

  3. Crystal growth velocity in deeply undercooled Ni-Si alloys

    Science.gov (United States)

    Lü, Y. J.

    2012-02-01

    The crystal growth velocity of Ni95Si5 and Ni90Si10 alloys as a function of undercooling is investigated using molecular dynamics simulations. The modified imbedded atom method potential yields the equilibrium liquidus temperatures T L ≈ 1505 and 1387 K for Ni95Si5 and Ni90Si10 alloys, respectively. From the liquidus temperatures down to the deeply undercooled region, the crystal growth velocities of both the alloys rise to the maximum with increasing undercooling and then drop slowly, whereas the athermal growth process presented in elemental Ni is not observed in Ni-Si alloys. Instead, the undercooling dependence of the growth velocity can be well-described by the diffusion-limited model, furthermore, the activation energy associated with the diffusion from melt to interface increases as the concentration increases from 5 to 10 at.% Si, resulting in the remarkable decrease of growth velocity.

  4. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

    2016-07-15

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  5. 5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

    Science.gov (United States)

    Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

    2018-05-01

    We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

  6. Particle Engulfment and Pushing by Solidifying Interfaces. Pt. 2; Micro-Gravity Experiments and Theoretical Analysis

    Science.gov (United States)

    Stefanescu, Doru M.; Juretzko, Frank R.; Dhindaw, Brij K.; Catalina, Adrian; Sen, Subhayu; Curreri, Peter A.

    1998-01-01

    Results of the directional solidification experiments on Particle Engulfment and Pushing by Solidifying Interfaces (PEP) conducted on the space shuttle Columbia during the Life and Microgravity Science Mission are reported. Two pure aluminum (99.999%) 9 mm cylindrical rods, loaded with about 2 vol.% 500 micrometers diameter zirconia particles were melted and resolidified in the microgravity (microg) environment of the shuttle. One sample was processed at step-wise increased solidification velocity, while the other at step-wise decreased velocity. It was found that a pushing-to-engulfment transition (PET) occurred in the velocity range of 0.5 to 1 micrometers. This is smaller than the ground PET velocity of 1.9 to 2.4 micrometers. This demonstrates that natural convection increases the critical velocity. A previously proposed analytical model for PEP was further developed. A major effort to identify and produce data for the surface energy of various interfaces required for calculation was undertaken. The predicted critical velocity for PET was of 0.775 micrometers/s.

  7. X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

    2005-02-01

    CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

    International Nuclear Information System (INIS)

    Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

    2005-01-01

    CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Time-resolved light emission of a, c, and r-cut sapphires shock-compressed to 65 GPa

    Science.gov (United States)

    Liu, Q. C.; Zhou, X. M.

    2018-04-01

    To investigate light emission and dynamic deformation behaviors, sapphire (single crystal Al2O3) samples with three crystallographic orientations (a, c, and r-cut) were shock-compressed by the planar impact method, with final stress ranges from 47 to 65 GPa. Emission radiance and velocity versus time profiles were simultaneously measured with a fast pyrometer and a Doppler pin system in each experiment. Wave profile results show anisotropic elastic-plastic transitions, which confirm the literature observations. Under final shock stress of about 52 GPa, lower emission intensity is observed in the r-cut sample, in agreement with the previous report in the literature. When final shock stress increases to 57 GPa and 65 GPa, spectral radiance histories of the r-cut show two stages of distinct features. In the first stage, the emission intensity of r-cut is lower than those of the other two, which agrees with the previous report in the literature. In the second stage, spectral radiance of r-cut increases with time at much higher rate and it finally peaks over those of the a and c-cut. These observations (conversion of intensified emission in the r-cut) may indicate activation of a second slip system and formation of shear bands which are discussed with the resolved shear stress calculations for the slip systems in each of the three cuts under shock compression.

  10. Airflow measurements at a wavy air-water interface using PIV and LIF

    Science.gov (United States)

    Buckley, Marc P.; Veron, Fabrice

    2017-11-01

    Physical phenomena at an air-water interface are of interest in a variety of flows with both industrial and natural/environmental applications. In this paper, we present novel experimental techniques incorporating a multi-camera multi-laser instrumentation in a combined particle image velocimetry and laser-induced fluorescence system. The system yields accurate surface detection thus enabling velocity measurements to be performed very close to the interface. In the application presented here, we show results from a laboratory study of the turbulent airflow over wind driven surface waves. Accurate detection of the wavy air-water interface further yields a curvilinear coordinate system that grants practical and easy implementation of ensemble and phase averaging routines. In turn, these averaging techniques allow for the separation of mean, surface wave coherent, and turbulent velocity fields. In this paper, we describe the instrumentation and techniques and show several data products obtained on the air-side of a wavy air-water interface.

  11. Properties of grazing-incidence pulsed Ti:sapphire laser oscillator

    International Nuclear Information System (INIS)

    Tamura, Koji

    2008-03-01

    A pulsed operation of a grazing-incidence double-grating Ti:sapphire laser oscillator that consists of a gain medium, back mirror, and a pair of gratings, was studied. A stable single-longitudinal-mode operation was achievable. From the calculation of the optical path trajectories, it can be explained by the increased beam walk-off from the gain medium by the introduction of the second grating compared with the conventional single-grating grazing-incidence cavity geometry. The improved spectral property was also explained by the calculations of increased dispersion. The results indicate that the oscillator configuration was useful for the applications which require stable mode operation and narrow linewidth such as the high resolution spectroscopy or the laser isotope separation. (author)

  12. Laser ablation of dental calculus at 400 nm using a Ti:sapphire laser

    Science.gov (United States)

    Schoenly, Joshua E.; Seka, Wolf; Rechmann, Peter

    2009-02-01

    A Nd:YAG laser-pumped, frequency-doubled Ti:sapphire laser is used for selective ablation of calculus. The laser provides calculus removal. This is in stark contrast with tightly focused Gaussian beams that are energetically inefficient and lead to irreproducible results. Calculus is well ablated at high fluences >=2J/cm2 stalling occurs below this fluence because of photobleaching. Healthy hard tissue is not removed at fluences <=3 J/cm2.

  13. Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

    Directory of Open Access Journals (Sweden)

    Keisuke Iwano

    2016-10-01

    Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

  14. Airborne particulate concentration during laser hair removal: A comparison between cold sapphire with aqueous gel and cryogen skin cooling.

    Science.gov (United States)

    Ross, Edward V; Chuang, Gary S; Ortiz, Arisa E; Davenport, Scott A

    2018-04-01

    High concentrations of sub-micron nanoparticles have been shown to be released during laser hair removal (LHR) procedures. These emissions pose a potential biohazard to healthcare workers that have prolonged exposure to LHR plume. We sought to demonstrate that cold sapphire skin cooling done in contact mode might suppress plume dispersion during LHR. A total of 11 patients were recruited for laser hair removal. They were treated on the legs and axilla with a 755 or 1064 nm millisecond-domain laser equipped with either (i) cryogen spray (CSC); (ii) refrigerated air (RA); or (iii) contact cooling with sapphire (CC). Concentration of ultrafine nanoparticles <1 μm were measured just before and during LHR with the three respective cooling methods. For contact cooling (CC), counts remained at baseline levels, below 3,500 parts per cubic centimeter (ppc) for all treatments. In contrast, the CSC system produced large levels of plume, peaking at times to over 400,000 ppc. The CA cooled system produced intermediate levels of plume, about 35,000 ppc (or about 10× baseline). Cold Sapphire Skin cooling with gel suppresses plume during laser hair removal, potentially eliminating the need for smoke evacuators, custom ventilation systems, and respirators during LHR. Lasers Surg. Med. 50:280-283, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  15. Lossy effects on the lateral shifts in negative-phase-velocity medium

    International Nuclear Information System (INIS)

    You Yuan

    2009-01-01

    Theoretical investigations of the lateral shifts of the reflected and transmitted beams were performed, using the stationary-phase approach, for the planar interface of a conventional medium and a lossy negative-phase-velocity medium. The lateral shifts exhibit different behaviors beyond and below a certain angle, for both incident p-polarized and incident s-polarized plane waves. Loss in the negative-phase-velocity medium affects lateral shifts greatly, and may cause changes from negative to positive values for p-polarized incidence

  16. A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

    DEFF Research Database (Denmark)

    Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

    2010-01-01

    We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

  17. Quantifying Heterogeneities in Soil Cover and Weathering in the Bitterroot and Sapphire Mountains, Montana: Implications for Glacial Legacies and their Morphologic Control on Soil Formation

    Science.gov (United States)

    Benjaram, S. S.; Dixon, J. L.

    2017-12-01

    To what extent is chemical weathering governed by a landscape's topography? Quantifying chemical weathering in both steep rocky landscapes and soil-mantled landscapes requires describing heterogeneity in soil and rock cover at local and landscape scales. Two neighboring mountain ranges in the northern Rockies of western Montana, USA, provide an ideal natural laboratory in which to investigate the relationship between soil chemical weathering, persistence of soil cover, and topography. We focus our work in the previously glaciated Bitterroot Mountains, which consist of steep, rock-dominated hillslopes, and the neighboring unglaciated Sapphire Mountains, which display convex, soil-mantled hillslopes. Soil thickness measurements, soil and rock geochemistry, and digital terrain analysis reveal that soils in the rock-dominated Bitterroot Mountains are only slightly less weathered than those in the Sapphire Mountains. However, these differences are magnified when adjusted for rock fragments at a local scale and bedrock cover at a landscape scale, using our newly developed metric, the rock-adjusted chemical depletion fraction (RACDF) and rock-adjusted mass transfer coefficient (RA τ). The Bitterroots overall are 30% less weathered than the Sapphires despite higher mean annual precipitation in the former, with an average rock-adjusted CDF of 0.38 in the postglacial Bitterroots catchment and 0.61 in the nonglacial Sapphire catchment, suggesting that 38% of rock mass is lost in the conversion to soil in the Bitterroots, whereas 61% of rock mass is lost in the nonglaciated Sapphires. Because the previously glaciated Bitterroots are less weathered despite being wetter, we conclude that the glacial history of this landscape exerts more influence on soil chemical weathering than does modern climate. However, while previous studies have correlated weathering intensity with topographic parameters such as slope gradient, we find little topographic indication of specific controls

  18. Study of confinement and sliding friction of fluids using sum frequency generation spectroscopy

    Science.gov (United States)

    Nanjundiah, Kumar

    2007-12-01

    Friction and wear are important technologically. Tires on wet roads, windshield wipers and human joints are examples where nanometer-thick liquids are confined between flexible-rigid contact interfaces. Fundamental understanding of the structure of these liquids can assist in the design of products such as artificial joints and lubricants for Micro-electromechanical systems [MEMS]. Prior force measurements have suggested an increase in apparent viscosity of confined liquid and sometimes solid-like responses. But, these have not given the state of molecules under confinement. In the present study, we have used a surface sensitive, non-linear optical technique (infrared-visible sum frequency generation spectroscopy [SFG]) to investigate molecular structure at hidden interfaces. SFG can identify chemical groups, concentration and orientation of molecules at an interface. A friction cell was developed to study sliding of a smooth elastomeric lens against a sapphire surface. Experiments were done with dry sliding as well as lubricated sliding in the presence of linear alkane liquids. SFG spectra at the alkane/sapphire interface revealed ordering of the confined alkane molecules. These were more ordered than alkane liquid, but less ordered than alkane crystal. Cooling of the confined alkane below its melting temperature [TM] led to molecular orientation that was different from that of bulk crystal next to a sapphire surface. Molecules were oriented with their symmetry axis parallel to the surface normal. In addition, the melting temperature [Tconf] under confinement for a series of linear alkanes (n =15--27) showed a surprising trend. Intermediate molecular weights showed melting point depression. The T conf values suggested that melting started at the alkane/sapphire interface. In another investigation, confinement of water between an elastomeric PDMS lens and sapphire was studied. SFG spectra at the sapphire/water/PDMS interface revealed a heterogeneous morphology. The

  19. Influence of interface properties on fracture behaviour of concrete

    Indian Academy of Sciences (India)

    Interface; concrete; bond strength; fracture toughness; stiffness; ductility. 1. Introduction .... behaviour of concrete using sandwich, and direct rock-mortar compact specimens under mode I and mode II ... pulse velocity technique. 4.2 Geometry of ...

  20. Optical and structural behaviour of Mn implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Franco, N.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2006-01-01

    Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 x 10 17 cm -2 . The samples were annealed at 1000 deg. C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 x 10 16 cm -2 , as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl 2 O 4 . On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission

  1. A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

    Science.gov (United States)

    Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

    2001-01-01

    A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

  2. Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tingting; Lei, Hong, E-mail: hong_lei2005@aliyun.com

    2017-08-15

    Highlights: • The novel Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives were synthesized by seed-introduced method. • The Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives exhibited lower Ra and higher MRR on sapphire during CMP. • The cores SiO{sub 2} were coated by the shells (SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) via chemical bonds and hydrogen bonds. • XPS analysis revealed the solid-state chemical reaction between Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives and sapphire during CMP. - Abstract: Abrasive is one of the most important factors in chemical mechanical polishing (CMP). In order to improve the polishing qualities of sapphire substrates, the novel Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives were prepared by seed-induced growth method. In this work, there were a series of condensation reactions during the synthesis process of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives and the silica cores were coated by shells (which contains SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) via chemical bonds and hydrogen bonds in the Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives, which made the composite abrasives’ core-shell structure more sTable Scanning electron microscopy (SEM) showed that Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives were spherical and uniform in size. And the acting mechanisms of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives on sapphire in CMP were investigated. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis and X-ray photoelectron spectroscopy (XPS) analysis demonstrated that the solid-state chemical reactions between the shells (which contained SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives and the sapphire occurred during the CMP process. Furthermore, Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives exhibited lower surface roughness and

  3. Solar wind stream interfaces

    International Nuclear Information System (INIS)

    Gosling, J.T.; Asbridge, J.R.; Bame, S.J.; Feldman, W.C.

    1978-01-01

    Measurements aboard Imp 6, 7, and 8 reveal that approximately one third of all high-speed solar wind streams observed at 1 AU contain a sharp boundary (of thickness less than approx.4 x 10 4 km) near their leading edge, called a stream interface, which separates plasma of distinctly different properties and origins. Identified as discontinuities across which the density drops abruptly, the proton temperature increases abruptly, and the speed rises, stream interfaces are remarkably similar in character from one stream to the next. A superposed epoch analysis of plasma data has been performed for 23 discontinuous stream interfaces observed during the interval March 1971 through August 1974. Among the results of this analysis are the following: (1) a stream interface separates what was originally thick (i.e., dense) slow gas from what was originally thin (i.e., rare) fast gas; (2) the interface is the site of a discontinuous shear in the solar wind flow in a frame of reference corotating with the sun; (3) stream interfaces occur at speeds less than 450 km s - 1 and close to or at the maximum of the pressure ridge at the leading edges of high-speed streams; (4) a discontinuous rise by approx.40% in electron temperature occurs at the interface; and (5) discontinuous changes (usually rises) in alpha particle abundance and flow speed relative to the protons occur at the interface. Stream interfaces do not generally recur on successive solar rotations, even though the streams in which they are embedded often do. At distances beyond several astronomical units, stream interfaces should be bounded by forward-reverse shock pairs; three of four reverse shocks observed at 1 AU during 1971--1974 were preceded within approx.1 day by stream interfaces. Our observations suggest that many streams close to the sun are bounded on all sides by large radial velocity shears separating rapidly expanding plasma from more slowly expanding plasma

  4. Sedimentation from flocculated suspensions in the presence of settling-driven gravitational interface instabilities

    Science.gov (United States)

    Rouhnia, Mohamad; Strom, Kyle

    2015-09-01

    We experimentally examine sedimentation from a freshwater suspension of clay flocs overlying saltwater in the presence of gravitational instabilities. The study seeks to determine: (1) if flocculation hampers or alters interface instability formation; (2) how the removal rates of sediment from the buoyant layer compare to those predicted by individual floc settling; and (3) whether or not it is possible to develop a model for effective settling velocity. The experiments were conducted in a tank at isothermal conditions. All experiments were initially stably stratified but later developed instabilities near the interface that grew into downward convecting plumes of fluid and sediment. Throughout, we measured sediment concentration in the upper and lower layers, floc size, and plume descent rates. The data showed that flocculation modifies the mixture settling velocity, and therefore shifts the mode of interface instability from double-diffusive (what one would expect from unflocculated clay) to settling-driven leaking and Rayleigh-Taylor instability formation. Removal rates of sediment from the upper layer in the presence of these instabilities were on the same order of magnitude as those predicted by individual floc settling. However, removal rates were found to better correlate with the speed of the interface plumes. A simple force-balance model was found to be capable of reasonably describing plume velocity based on concentration in the buoyant layer. This relation, coupled with a critical Grashof number and geometry relations, allowed us to develop a model for the effective settling velocity of the mixture based solely on integral values of the upper layer.

  5. Global catalog of earthquake rupture velocities shows anticorrelation between stress drop and rupture velocity

    Science.gov (United States)

    Chounet, Agnès; Vallée, Martin; Causse, Mathieu; Courboulex, Françoise

    2018-05-01

    Application of the SCARDEC method provides the apparent source time functions together with seismic moment, depth, and focal mechanism, for most of the recent earthquakes with magnitude larger than 5.6-6. Using this large dataset, we have developed a method to systematically invert for the rupture direction and average rupture velocity Vr, when unilateral rupture propagation dominates. The approach is applied to all the shallow (z earthquakes of the catalog over the 1992-2015 time period. After a careful validation process, rupture properties for a catalog of 96 earthquakes are obtained. The subsequent analysis of this catalog provides several insights about the seismic rupture process. We first report that up-dip ruptures are more abundant than down-dip ruptures for shallow subduction interface earthquakes, which can be understood as a consequence of the material contrast between the slab and the overriding crust. Rupture velocities, which are searched without any a-priori up to the maximal P wave velocity (6000-8000 m/s), are found between 1200 m/s and 4500 m/s. This observation indicates that no earthquakes propagate over long distances with rupture velocity approaching the P wave velocity. Among the 23 ruptures faster than 3100 m/s, we observe both documented supershear ruptures (e.g. the 2001 Kunlun earthquake), and undocumented ruptures that very likely include a supershear phase. We also find that the correlation of Vr with the source duration scaled to the seismic moment (Ts) is very weak. This directly implies that both Ts and Vr are anticorrelated with the stress drop Δσ. This result has implications for the assessment of the peak ground acceleration (PGA) variability. As shown by Causse and Song (2015), an anticorrelation between Δσ and Vr significantly reduces the predicted PGA variability, and brings it closer to the observed variability.

  6. Visualization of an air-water interface on superhydrophobic surfaces in turbulent channel flows

    Science.gov (United States)

    Kim, Hyunseok; Park, Hyungmin

    2017-11-01

    In the present study, three-dimensional deformation of air-water interface on superhydrophobic surfaces in turbulent channel flows at the Reynolds numbers of Re = 3000 and 10000 is measured with RICM (Reflection Interference Contrast Microscopy) technique. Two different types of roughness feature of circular hole and rectangular grate are considered, whose depth is 20 μm and diameter (or width) is varied between 20-200 μm. Since the air-water interface is always at de-pinned state at the considered condition, air-water interface shape and its sagging velocity is maintained to be almost constant as time goes one. In comparison with the previous results under the laminar flow, due to turbulent characteristics of the flow, sagging velocity is much faster. Based on the measured sagging profiles, a modified model to describe the air-water interface dynamics under turbulent flows is suggested. Supported by City of Seoul through Seoul Urban Data Science Laboratory Project (Grant No 0660-20170004) administered by SNU Big Data Institute.

  7. Statistics of the turbulent/non-turbulent interface in a spatially developing mixing layer

    KAUST Repository

    Attili, Antonio

    2014-06-02

    The thin interface separating the inner turbulent region from the outer irrotational fluid is analysed in a direct numerical simulation of a spatially developing turbulent mixing layer. A vorticity threshold is defined to detect the interface separating the turbulent from the non-turbulent regions of the flow, and to calculate statistics conditioned on the distance from this interface. The conditional statistics for velocity are in remarkable agreement with the results for other free shear flows available in the literature, such as turbulent jets and wakes. In addition, an analysis of the passive scalar field in the vicinity of the interface is presented. It is shown that the scalar has a jump at the interface, even stronger than that observed for velocity. The strong jump for the scalar has been observed before in the case of high Schmidt number (Sc). In the present study, such a strong jump is observed for a scalar with Sc ≈ 1. Conditional statistics of kinetic energy and scalar dissipation are presented. While the kinetic energy dissipation has its maximum far from the interface, the scalar dissipation is characterised by a strong peak very close to the interface. Finally, it is shown that the geometric features of the interfaces correlate with relatively large scale structures as visualised by low-pressure isosurfaces. © 2014 Taylor & Francis.

  8. Nonlinear Displacement Discontinuity Model for Generalized Rayleigh Wave in Contact Interface

    Energy Technology Data Exchange (ETDEWEB)

    Kim, No Hyu; Yang, Seung Yong [Korea University of Technology and Education, Cheonan (Korea, Republic of)

    2007-12-15

    Imperfectly jointed interface serves as mechanical waveguide for elastic waves and gives rise to two distinct kinds of guided wave propagating along the interface. Contact acoustic nonlinearity (CAN) is known to plays major role in the generation of these interface waves called generalized Rayleigh waves in non-welded interface. Closed crack is modeled as non-welded interface that has nonlinear discontinuity condition in displacement across its boundary. Mathematical analysis of boundary conditions and wave equation is conducted to investigate the dispersive characteristics of the interface waves. Existence of the generalized Rayleigh wave(interface wave) in nonlinear contact interface is verified in theory where the dispersion equation for the interface wave is formulated and analyzed. It reveals that the interface waves have two distinct modes and that the phase velocity of anti-symmetric wave mode is highly dependent on contact conditions represented by linear and nonlinear dimensionless specific stiffness

  9. Nonlinear Displacement Discontinuity Model for Generalized Rayleigh Wave in Contact Interface

    International Nuclear Information System (INIS)

    Kim, No Hyu; Yang, Seung Yong

    2007-01-01

    Imperfectly jointed interface serves as mechanical waveguide for elastic waves and gives rise to two distinct kinds of guided wave propagating along the interface. Contact acoustic nonlinearity (CAN) is known to plays major role in the generation of these interface waves called generalized Rayleigh waves in non-welded interface. Closed crack is modeled as non-welded interface that has nonlinear discontinuity condition in displacement across its boundary. Mathematical analysis of boundary conditions and wave equation is conducted to investigate the dispersive characteristics of the interface waves. Existence of the generalized Rayleigh wave(interface wave) in nonlinear contact interface is verified in theory where the dispersion equation for the interface wave is formulated and analyzed. It reveals that the interface waves have two distinct modes and that the phase velocity of anti-symmetric wave mode is highly dependent on contact conditions represented by linear and nonlinear dimensionless specific stiffness

  10. Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

  11. AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

    2014-09-01

    Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

  12. MHD modeling of ATLAS experiments to study transverse shear interface interactions

    CERN Document Server

    Faehl, R J; Keinigs, R K; Lindemuth, I R

    2001-01-01

    Summary form only given. The transverse shear established at the interface of two solids moving at differential velocities on the order of the sound speed is being studied in experiments on the ATLAS capacitor bank at Los Alamos, beginning in August 2001. The ATLAS bank has finished certification tests and has demonstrated peak currents of 27.5 MA with a 5 microsecond risetime into an inductive load. One- and two-dimensional MHD calculations have been performed in support of these "friction-like" ATLAS experiments. Current flowing along the outer surface of a thick aluminum liner, roughly 8 mm thick, accelerates the solid liner to velocities ~1 km/s. This cylindrically imploding liner then impacts a target assembly, composed of alternating regions of high and low density materials. The different shock speeds in the two materials leads to a differential velocity along the interface. Shock heating, elastic- plastic flow, and stress transport are included in the calculations. Material strength properties are tre...

  13. RadVel: The Radial Velocity Modeling Toolkit

    Science.gov (United States)

    Fulton, Benjamin J.; Petigura, Erik A.; Blunt, Sarah; Sinukoff, Evan

    2018-04-01

    RadVel is an open-source Python package for modeling Keplerian orbits in radial velocity (RV) timeseries. RadVel provides a convenient framework to fit RVs using maximum a posteriori optimization and to compute robust confidence intervals by sampling the posterior probability density via Markov Chain Monte Carlo (MCMC). RadVel allows users to float or fix parameters, impose priors, and perform Bayesian model comparison. We have implemented real-time MCMC convergence tests to ensure adequate sampling of the posterior. RadVel can output a number of publication-quality plots and tables. Users may interface with RadVel through a convenient command-line interface or directly from Python. The code is object-oriented and thus naturally extensible. We encourage contributions from the community. Documentation is available at http://radvel.readthedocs.io.

  14. The active control devices of the size of products based on sapphire measuring tips with three degrees of freedom

    Science.gov (United States)

    Leun, E. V.; Leun, V. I.; Sysoev, V. K.; Zanin, K. A.; Shulepov, A. V.; Vyatlev, P. A.

    2018-01-01

    The article presents the results of the calculation of the load capacity of the active control devices (ACD) sapphire tip, which showed nearly 30-fold margin of safety to shock loads and experimental researches in mechanical contact with 5 cogs cutter 15 mm in diameter rotating with a frequency of 1000 rpm, which confirmed the calculations, determined the surface roughness Rz of the contact area of no more than 0.15 μm. Conditions have been created for recording without distortion of the image through a sapphire tip in contact with the processed article. A ACD design with new functionality is proposed: with one, two and three degrees of freedom of the sapphire tip and allows measuring the taper of the article and measurements on the chord. It is shown that with the implementation of their fixed head like the frame of the gyroscope with the rotations around the axes OY and OZ. It is shown that the rotation of the tip around the axis OX can be replaced more convenient for the implementation of the angular offset of the transferred image due to rotation of the output end of the flexible optical waveguide relative to the input. This makes it possible to reduce the "blurring of the image" during registration of the fast moving product profile when the slope of the recorder lines coincides with the slope of the edges of the image elements of the selected moving elements of the article.

  15. Measurement of sound velocity profiles in fluids for process monitoring

    International Nuclear Information System (INIS)

    Wolf, M; Kühnicke, E; Lenz, M; Bock, M

    2012-01-01

    In ultrasonic measurements, the time of flight to the object interface is often the only information that is analysed. Conventionally it is only possible to determine distances or sound velocities if the other value is known. The current paper deals with a novel method to measure the sound propagation path length and the sound velocity in media with moving scattering particles simultaneously. Since the focal position also depends on sound velocity, it can be used as a second parameter. Via calibration curves it is possible to determine the focal position and sound velocity from the measured time of flight to the focus, which is correlated to the maximum of averaged echo signal amplitude. To move focal position along the acoustic axis, an annular array is used. This allows measuring sound velocity locally resolved without any previous knowledge of the acoustic media and without a reference reflector. In previous publications the functional efficiency of this method was shown for media with constant velocities. In this work the accuracy of these measurements is improved. Furthermore first measurements and simulations are introduced for non-homogeneous media. Therefore an experimental set-up was created to generate a linear temperature gradient, which also causes a gradient of sound velocity.

  16. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  17. Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

    Science.gov (United States)

    Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

    2016-05-01

    The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS

  18. Evolution of interface and surface structures of ZnO/Al2 O3 multilayers upon rapid thermal annealing

    Science.gov (United States)

    Liu, H. H.; Chen, Q. Y.; Chang, C. F.; Hsieh, W. C.; Wadekar, P. V.; Huang, H. C.; Liao, H. H.; Seo, H. W.; Chu, W. K.

    2015-03-01

    ZnO ∖Al2O3 multilayers were deposited on sapphires by atomic layer deposition at 85°C. This low substrate temperature ensures good interface smoothness useful for study of interfacial reaction or interdiffusion. Our study aimed at the effects of rapid thermal annealing at different annealing temperatures, times and PAr:PO2. XRR and XRD techniques were used to investigate the kinetics from which various terms of the activation energies could be determined. HR-TEM and electron diffraction were carried out to correlate the microstructures and interfacial alignments as a result of the reactions. AFM were used to assist SEM profiling of the surface morphological evolution in association with the TEM observations.

  19. Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

    NARCIS (Netherlands)

    Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

    2004-01-01

    We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

  20. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, Markus; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  1. A new virtual instrument for estimating punch velocity in combat sports.

    Science.gov (United States)

    Urbinati, K S; Scheeren, E; Nohama, P

    2013-01-01

    For improving the performance in combat sport, especially percussion, it is necessary achieving high velocity in punches and kicks. The aim of this study was to evaluate the applicability of 3D accelerometry in a Virtual Instrumentation System (VIS) designed for estimating punch velocity in combat sports. It was conducted in two phases: (1) integration of the 3D accelerometer with the communication interface and software for processing and visualization, and (2) applicability of the system. Fifteen karate athletes performed five gyaku zuki type punches (with reverse leg) using the accelerometer on the 3rd metacarpal on the back of the hand. It was performed nonparametric Mann-Whitney U-test to determine differences in the mean linear velocity among three punches performed sequentially (p sport.

  2. Seismic velocity structure of the forearc in northern Cascadia from Bayesian inversion of teleseismic data

    Science.gov (United States)

    Gosselin, J.; Audet, P.; Schaeffer, A. J.

    2017-12-01

    The seismic velocity structure in the forearc of subduction zones provides important constraints on material properties, with implications for seismogenesis. In Cascadia, previous studies have imaged a downgoing low-velocity zone (LVZ) characterized by an elevated P-to-S velocity ratio (Vp/Vs) down to 45 km depth, near the intersection with the mantle wedge corner, beyond which the signature of the LVZ disappears. These results, combined with the absence of a "normal" continental Moho, indicate that the down-going oceanic crust likely carries large amounts of overpressured free fluids that are released downdip at the onset of crustal eclogitization, and are further stored in the mantle wedge as serpentinite. These overpressured free fluids affect the stability of the plate interface and facilitate slow slip. These results are based on the inversion and migration of scattered teleseismic data for individual layer properties; a methodology which suffers from regularization and smoothing, non-uniqueness, and does not consider model uncertainty. This study instead applies trans-dimensional Bayesian inversion of teleseismic data collected in the forearc of northern Cascadia (the CAFÉ experiment in northern Washington) to provide rigorous, quantitative estimates of local velocity structure, and associated uncertainties (particularly Vp/Vs structure and depth to the plate interface). Trans-dimensional inversion is a generalization of fixed-dimensional inversion that includes the number (and type) of parameters required to describe the velocity model (or data error model) as unknown in the problem. This allows model complexity to be inherently determined by data information content, not by subjective regularization. The inversion is implemented here using the reversible-jump Markov chain Monte Carlo algorithm. The result is an ensemble set of candidate velocity-structure models which approximate the posterior probability density (PPD) of the model parameters. The solution

  3. Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

    Energy Technology Data Exchange (ETDEWEB)

    Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

  4. Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

    Science.gov (United States)

    Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

    2013-05-01

    A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

  5. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Sang Ling; Liu Jian-Ming; Xu Xiao-Qing; Wang Jun; Zhao Gui-Juan; Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; Wei Hong-Yuan; Liu Xiang-Lin; Yang Shao-Yan; Zhu Qin-Sheng; Wang Zhan-Guo

    2012-01-01

    The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on r-sapphire is studied. The influences of V/III ratio and growth temperature on surface morphology are investigated. V-pits and stripes are observed on the surface of a-GaN grown at 1050°C and 1100°C, respectively. The overall orientation and geometry of V-pits are uniform and independent on the V/III molar ratio in the samples grown at 1050°C, while in the samples grown at 1100°C, the areas of stripes decrease with the adding of V/III ratio. We deduce the origin of V-pits and stripes by annealing the buffer layers at different temperatures. Because of the existence of inclined (101-bar1) facets, V-pits are formed at 1050°C. The (101-bar1) plane is an N terminated surface, which is metastable at higher temperature, so stripes instead of V-pits are observed at 1100°C. Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films. Hence, to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire. (condensed matter: structure, mechanical and thermal properties)

  6. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    OpenAIRE

    Kohei Ueno; Eiji Kishikawa; Jitsuo Ohta; Hiroshi Fujioka

    2017-01-01

    High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films...

  7. Role of mixed boundaries on flow in open capillary channels with curved air-water interfaces.

    Science.gov (United States)

    Zheng, Wenjuan; Wang, Lian-Ping; Or, Dani; Lazouskaya, Volha; Jin, Yan

    2012-09-04

    Flow in unsaturated porous media or in engineered microfluidic systems is dominated by capillary and viscous forces. Consequently, flow regimes may differ markedly from conventional flows, reflecting strong interfacial influences on small bodies of flowing liquids. In this work, we visualized liquid transport patterns in open capillary channels with a range of opening sizes from 0.6 to 5.0 mm using laser scanning confocal microscopy combined with fluorescent latex particles (1.0 μm) as tracers at a mean velocity of ∼0.50 mm s(-1). The observed velocity profiles indicate limited mobility at the air-water interface. The application of the Stokes equation with mixed boundary conditions (i.e., no slip on the channel walls and partial slip or shear stress at the air-water interface) clearly illustrates the increasing importance of interfacial shear stress with decreasing channel size. Interfacial shear stress emerges from the velocity gradient from the adjoining no-slip walls to the center where flow is trapped in a region in which capillary forces dominate. In addition, the increased contribution of capillary forces (relative to viscous forces) to flow on the microscale leads to increased interfacial curvature, which, together with interfacial shear stress, affects the velocity distribution and flow pattern (e.g., reverse flow in the contact line region). We found that partial slip, rather than the commonly used stress-free condition, provided a more accurate description of the boundary condition at the confined air-water interface, reflecting the key role that surface/interface effects play in controlling flow behavior on the nanoscale and microscale.

  8. Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

    International Nuclear Information System (INIS)

    Vetrov, V. N.; Ignatenkov, B. A.

    2013-01-01

    The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

  9. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  10. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

    2016-04-15

    In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  11. UCVM: An Open Source Framework for 3D Velocity Model Research

    Science.gov (United States)

    Gill, D.; Maechling, P. J.; Jordan, T. H.; Plesch, A.; Taborda, R.; Callaghan, S.; Small, P.

    2013-12-01

    Three-dimensional (3D) seismic velocity models provide fundamental input data to ground motion simulations, in the form of structured or unstructured meshes or grids. Numerous models are available for California, as well as for other parts of the United States and Europe, but models do not share a common interface. Being able to interact with these models in a standardized way is critical in order to configure and run 3D ground motion simulations. The Unified Community Velocity Model (UCVM) software, developed by researchers at the Southern California Earthquake Center (SCEC), is an open source framework designed to provide a cohesive way to interact with seismic velocity models. We describe the several ways in which we have improved the UCVM software over the last year. We have simplified the UCVM installation process by automating the installation of various community codebases, improving the ease of use.. We discuss how UCVM software was used to build velocity meshes for high-frequency (4Hz) deterministic 3D wave propagation simulations, and how the UCVM framework interacts with other open source resources, such as NetCDF file formats for visualization. The UCVM software uses a layered software architecture that transparently converts geographic coordinates to the coordinate systems used by the underlying velocity models and supports inclusion of a configurable near-surface geotechnical layer, while interacting with the velocity model codes through their existing software interfaces. No changes to the velocity model codes are required. Our recent UCVM installation improvements bundle UCVM with a setup script, written in Python, which guides users through the process that installs the UCVM software along with all the user-selectable velocity models. Each velocity model is converted into a standardized (configure, make, make install) format that is easily downloaded and installed via the script. UCVM is often run in specialized high performance computing (HPC

  12. Evaluation of an improved mixing plane interface for OpenFOAM

    International Nuclear Information System (INIS)

    Beaudoin, M; Page, M; Magnan, R; Nilsson, H; Jasak, H

    2014-01-01

    A mixing plane interface provides a circumferentially averaging rotor-stator coupling interface, which is extremely useful in practical turbomachinery simulations. It allows fundamentally transient problems to be studied in steady-state, using simplified mesh components having periodic properties, and with the help of a multiple reference frames (MRF) approach. An improved version of the mixing plane interface for the community-driven version of OpenFOAM is presented. This new version of the mixing plane introduces a per- field, user-selectable mixing option for the flow fields at the interface, including the possibility to use a mass-flow averaging algorithm for the velocity field. We show that the quality of the mass-flow transfer can be improved by a proper selection of the mixing options at the interface. This paper focuses on the evaluation of the improved mixing plane interface for various steady-state simulations of incompressible flows, applied to a simple 2D validation test case, and to more complex 3D turbomachinery cases

  13. Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

    Science.gov (United States)

    Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

    2018-07-01

    We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

  14. Angle dependence of Andreev scattering at semiconductor-superconductor interfaces

    DEFF Research Database (Denmark)

    Mortensen, Asger; Flensberg, Karsten; Jauho, Antti-Pekka

    1999-01-01

    We study the angle dependence of the Andreev scattering at a semiconductor-superconductor interface, generalizing the one-dimensional theory of Blonder, Tinkham, and Klapwijk (BTK),An increase of the momentum parallel to the interface leads to suppression of the probability of Andreev reflection...... and increase of the probability of normal reflection. We show that in the presence of a Fermi velocity mismatch between the semiconductor and the superconductor the angles of incidence and transmission are related according to the well-known Snell's law in optics. As a consequence there is a critical angle...

  15. The impact of groundwater velocity fields on streamlines in an aquifer system with a discontinuous aquitard (Inner Mongolia, China)

    Science.gov (United States)

    Wu, Qiang; Zhao, Yingwang; Xu, Hua

    2018-04-01

    Many numerical methods that simulate groundwater flow, particularly the continuous Galerkin finite element method, do not produce velocity information directly. Many algorithms have been proposed to improve the accuracy of velocity fields computed from hydraulic potentials. The differences in the streamlines generated from velocity fields obtained using different algorithms are presented in this report. The superconvergence method employed by FEFLOW, a popular commercial code, and some dual-mesh methods proposed in recent years are selected for comparison. The applications to depict hydrogeologic conditions using streamlines are used, and errors in streamlines are shown to lead to notable errors in boundary conditions, the locations of material interfaces, fluxes and conductivities. Furthermore, the effects of the procedures used in these two types of methods, including velocity integration and local conservation, are analyzed. The method of interpolating velocities across edges using fluxes is shown to be able to eliminate errors associated with refraction points that are not located along material interfaces and streamline ends at no-flow boundaries. Local conservation is shown to be a crucial property of velocity fields and can result in more accurate streamline densities. A case study involving both three-dimensional and two-dimensional cross-sectional models of a coal mine in Inner Mongolia, China, are used to support the conclusions presented.

  16. Automatic discrimination of bubbles and slugs in two-phase gas-liquid flow and measurement of the respective velocities

    International Nuclear Information System (INIS)

    Fitremann, J.M.; Guilpin, C.; Postaire, J.

    1976-01-01

    The measurement of the interface velocity in a two-phase gas-liquid flow is a difficult problem, owing to the dispersion of the velocity components of individual bubbles, gas-slugs, droplets, waves, etc. An entirely automatic method is presented, it gives the velocity of slugs and bubbles independently, by discrimination of local phase probe signals into a 'slug' signal and a 'bubble' signal feeding a shape-recognition program. Both discriminated void fractions are also calculated by the apparatus [fr

  17. Rotating Hele-Shaw cell with a time-dependent angular velocity

    Science.gov (United States)

    Anjos, Pedro H. A.; Alvarez, Victor M. M.; Dias, Eduardo O.; Miranda, José A.

    2017-12-01

    Despite the large number of existing studies of viscous flows in rotating Hele-Shaw cells, most investigations analyze rotational motion with a constant angular velocity, under vanishing Reynolds number conditions in which inertial effects can be neglected. In this work, we examine the linear and weakly nonlinear dynamics of the interface between two immiscible fluids in a rotating Hele-Shaw cell, considering the action of a time-dependent angular velocity, and taking into account the contribution of inertia. By using a generalized Darcy's law, we derive a second-order mode-coupling equation which describes the time evolution of the interfacial perturbation amplitudes. For arbitrary values of viscosity and density ratios, and for a range of values of a rotational Reynolds number, we investigate how the time-dependent angular velocity and inertia affect the important finger competition events that traditionally arise in rotating Hele-Shaw flows.

  18. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

    Science.gov (United States)

    Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

    2018-05-01

    High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

  19. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Czech Academy of Sciences Publication Activity Database

    Musil, Stanislav; Matoušek, Tomáš; Dědina, Jiří

    2015-01-01

    Roč. 108, JUN (2015), s. 61-67 ISSN 0584-8547 R&D Projects: GA ČR GA14-23532S Grant - others:GA AV ČR(CZ) M200311202 Institutional support: RVO:68081715 Keywords : silver * volatile species generation * sapphire tube atomizer Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.289, year: 2015

  20. Turbulent heat/mass transfer at oceanic interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Enstad, Lars Inge

    2005-07-01

    The thesis studies heat/mass transfer and uses various simulation techniques. A numerical method has been developed. 4 papers which describes the work, are included. In the first paper we look at such flow configuration where the flow is driven by a constant pressure gradient and the interface is cooled from above. Papers 2 and 3. 2: The effect of stable density stratification on turbulent vortical structures near an atmosphere-ocean interface driven by low wind shear. 3: Low shear turbulence structures beneath a gas-liquid interface under neutral and stable stratified conditions. A well known feature of the upper layer of the ocean is the presence of counter-rotating streamwise vorticity, so called Langmuir circulation. Earlier numerical investigations show that similar vortex structures appear on small scale induced by shear instability only. Short wave solar radiation may create a stable situation which affects the turbulence near the interface. In these papers we investigate such a flow situation by employing a uniform and constant shear stress at the interface together with a similar heat flux into the interface. In both articles we also use a two-point correlation to give a statistical representation of the streamwise vorticity. The spatial extent and intensity are decreased by stable stratification. In addition, in article 3, we find that the Reynolds stress is damped by stable stratification. This leads to an increased mean velocity since decreased Reynolds stress is compensated by a larger mean velocity gradient. The cospectra of the Reynolds stress in the spanwise direction show that the production of Reynolds stress is decreased at lower wave numbers and thus shifted to higher wave numbers in the presence of stable stratification. The streak structure created by the streamwise vorticity is disorganized by stable stratification. Article 4: A numerical study of a density interface using the General Ocean Turbulence Model (GOTM) coupled with a Navier Stokes

  1. Influence of confining prestress on the transition from interface defeat to penetration in ceramic targets

    Directory of Open Access Journals (Sweden)

    Patrik Lundberg

    2016-06-01

    Full Text Available Replica scaled impact experiments with unconfined ceramic targets have shown that the transition velocity, i.e., the impact velocity at which interface defeat ceases and ceramic penetration occurs, decreased as the length scale increased. A possible explanation of how this scale effect is related to the formation of a cone crack in the ceramic has been presented by the authors in an earlier paper. Here, the influence of confinement and prestress on cone cracking and transition velocity is investigated. The hypothesis is that prestress will suppress the formation and growth of the cone crack by lowering the driving stress. A set of impact experiments has been performed in which the transition velocity for four different levels of prestress has been determined. The transition velocities as a function of the level of confining prestress is compared to an analytical model for the influence of prestress on the formation and extension of the cone crack in the ceramic material. Both experiments and model indicate that prestress has a strong influence on the transition from interface defeat to penetration, although the model underestimates the influence of prestress.

  2. Site location and optical properties of Eu implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2005-01-01

    Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 x 10 16 cm -2 . Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 deg. C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 deg. C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements

  3. Sound velocity of tantalum under shock compression in the 18–142 GPa range

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Feng, E-mail: xifeng@caep.cn; Jin, Ke; Cai, Lingcang, E-mail: cai-lingcang@aliyun.com; Geng, Huayun; Tan, Ye; Li, Jun [National Key Laboratory of Shock Waves and Detonation Physics, Institute of Fluid Physics, CAEP, P.O. Box 919-102 Mianyang, Sichuan 621999 (China)

    2015-05-14

    Dynamic compression experiments of tantalum (Ta) within a shock pressure range from 18–142 GPa were conducted driven by explosive, a two-stage light gas gun, and a powder gun, respectively. The time-resolved Ta/LiF (lithium fluoride) interface velocity profiles were recorded with a displacement interferometer system for any reflector. Sound velocities of Ta were obtained from the peak state time duration measurements with the step-sample technique and the direct-reverse impact technique. The uncertainty of measured sound velocities were analyzed carefully, which suggests that the symmetrical impact method with step-samples is more accurate for sound velocity measurement, and the most important parameter in this type experiment is the accurate sample/window particle velocity profile, especially the accurate peak state time duration. From these carefully analyzed sound velocity data, no evidence of a phase transition was found up to the shock melting pressure of Ta.

  4. Momentum and scalar transport at the turbulent/non-turbulent interface of a jet

    DEFF Research Database (Denmark)

    Westerweel, J.; Fukushima, C.; Pedersen, Jakob Martin

    2009-01-01

    and well-defined bounding interface between the turbulent and non-turbulent regions of flow. The jet carries a fluorescent dye measured with planar laser-induced fluorescence (LIF), and the surface discontinuity in the scalar concentration is identified as the fluctuating turbulent jet interface. Thence...... velocity and mean scalar and a tendency towards a singularity in mean vorticity. These actual or asymptotic discontinuities are consistent with the conditional mean momentum and scalar transport equations integrated across the interface. Measurements of the fluxes of turbulent kinetic energy and enstrophy...

  5. Well-posedness for the compressible Navier–Stokes–Lamé system with a free interface

    International Nuclear Information System (INIS)

    Kukavica, Igor; Tuffaha, Amjad

    2012-01-01

    We address the system of fluid–structure interaction consisting of a compressible Navier–Stokes equation coupled with an elasticity equation, with the velocity and stress continuity requirements across the free moving interface. We prove the a priori estimates for existence of solutions when the initial velocity belongs to H 3 , the initial density is bounded from below and belongs to H 3/2+r , where r > 0, and the initial velocity of the displacement is in H 3/2+r . (paper)

  6. On-line velocity measurements using phase probes at the SuperHILAC

    International Nuclear Information System (INIS)

    Feinberg, B.; Meaney, D.; Thatcher, R.; Timossi, C.

    1987-12-01

    Phase probes have been placed in several external beam lines at the LBL heavy ion linear accelerator (SuperHILAC) to provide non- destructive velocity measurements independent of the ion being accelerated. The system uses three probes in each line to obtain accurate velocity measurements at all beam energies. Automatic gain control and signal analysis are performed so that the energy/nucleon along with up to three probe signals are displayed on a vector graphics display with a refresh rate better than twice per second. The system uses a sensitive pseudo-correlation technique to pick out the signal from the noise, features simultaneous measurements of up to four ion velocities when more than one beam is being accelerated, and is controlled by a touch-screen operator interface. It is accurate to within /+-/0.25% and has provisions for on-line calibration tests. The phase probes thus provide a velocity measurement independent of the mass defect associated with the use of crystal detectors, which can become significant for heavy elements. They are now used as a routine tuning aid to ensure proper bunch structure, and as a beam velocity monitor. 3 refs., 5 figs

  7. PIV and LIF Measurements of Flow in the Vicinity of Moving Interface

    International Nuclear Information System (INIS)

    Jun Shimizu; Takahiro Ito; Yoshiyuki Tsuji; Yutaka Kukita

    2002-01-01

    The interface between overlaid fluids can become unstable when the fluids are excited vertically. Ito et al. (1999) studied a combined excitation problem where the fluids were excited vertically in a stationary cylinder while the interface motion was restricted by the mobility of the fluid-fluid-wall contact line. They found that the contact line exhibits stick-slip-like motion for the combination of fluids and wall material used in their experiments (water and kerosene oil in a cylinder made of acrylic resin). The flow above and beneath the interface is visualized by adding small particles. A vertical, diametral cross section of the test section is illuminated by a 509-nm Argon laser sheet. The experimental data presented in this paper were taken using 'EXPANCEL' particle tracer with a typical diameter of 10 μm, added to the water above and beneath the interface. Pictures are taken by a high-speed CCD camera at a rate of 120 frame/s. Each un-interlaced (120 frame/s) video frame is divided into 640 x 480 pixels for image processing. The fluid velocity is obtained for each 2.95 mm x 2.95 mm area by using the PIV technique. Visualization studies have revealed that the nonuniform velocity distribution above and below the interface extends to a much greater depth than the wave amplitude. Streamlines were taken by using Rhodamine-B fluorescent dye which was added to water beneath the interface and excited with an Ar laser fan beam, with a CCD camera. (authors)

  8. Automated quantification of apoptosis in B-cell chronic lymphoproliferative disorders: a prognostic variable obtained with the Cell-Dyn Sapphire (Abbott) automated hematology analyzer.

    Science.gov (United States)

    Fumi, M; Martins, D; Pancione, Y; Sale, S; Rocco, V

    2014-12-01

    B-chronic lymphocytic leukemia CLL, a neoplastic clonal disorder with monomorphous small B lymphocytes with scanty cytoplasm and clumped chromatin, can be morphologically differentiated in typical and atypical forms with different prognosis: Smudge cells (Gumprecht's shadows) are one of the well-known features of the typical CLL and are much less inconsistent in other different types CLPD. Abbott Cell-Dyn Sapphire uses the fluorescence after staining with the DNA fluorochrome propidium iodide for the measurement of nucleated red blood cells (NRBCs) and nonviable cells (FL3+ cell fraction): We have studied the possible correlation between presence and number of morphologically identifiable smudge cells on smears and the percentage of nonviable cells produced by Cell-Dyn Sapphire. 305 blood samples from 224 patients with B-cell lymphoproliferative disorders and 40 healthy blood donors were analyzed by CBC performed by Cell-Dyn Sapphire, peripheral blood smear, and immunophenotype characterization. FL3+ fraction in CLPD directly correlated with the percentage of smudge cells and is significantly increased in patients with typical B-CLL. This phenomenon is much less evident in patients with atypical/mixed B-CLL and B-NHL. In small laboratories without FCM and cytogenetic, smudge cells%, can be utilized as a preliminary diagnostic and prognostic tool in differential diagnosis of CLPD. © 2014 John Wiley & Sons Ltd.

  9. Wave analysis at frictional interface: A case wise study

    Science.gov (United States)

    Srivastava, Akanksha; Chattopadhyay, Amares; Singh, Pooja; Singh, Abhishek Kumar

    2018-03-01

    The present article deals with the propagation of a Stoneley wave and with the reflection as well as refraction of an incident P -wave at the frictional bonded interface between an initially stressed isotropic viscoelastic semi-infinite superstratum and an initially stressed isotropic substratum as case I and case II, respectively. The complex form of the velocity equation has been derived in closed form for the propagation of a Stoneley wave in the said structure. The real and imaginary parts of the complex form of the velocity equation correspond to the phase velocity and damped velocity of the Stoneley wave. Phase and damped velocity have been analysed against the angular frequency. The expressions of the amplitude ratios of the reflected and refracted waves are deduced analytically. The variation of the amplitude ratios is examined against the angle of incidence of the P -wave. The influence of frictional boundary parameters, initial stress, viscoelastic parameters on the phase and damped velocities of the Stoneley wave and the amplitude ratios of the reflected as well as refracted P - and SV -wave have been revealed graphically through numerical results.

  10. Kinetics of dissolution of sapphire in melts in the CaO-Al2O3-SiO2 system

    Science.gov (United States)

    Shaw, Cliff S. J.; Klausen, Kim B.; Mao, Huahai

    2018-05-01

    The dissolution rate of sapphire in melts in the CAS system of varying silica activity, viscosity and degree of alumina saturation has been determined at 1600 °C and 1.5 GPa. After an initiation period of up to 1800 s, dissolution is controlled by diffusion of cations through the boundary layer adjacent to the dissolving sapphire. The dissolution rate decreases with increasing silica activity, viscosity and molar Al2O3/CaO. The calculated diffusion matrix for each solvent melt shows that CAS 1 and 9 which have molar Al2O3/CaO of 0.33 and 0.6 and dissolution rate constants of 0.65 × 10-6 and 0.59 × 10-6 m/s0.5 have similar directions and magnitudes of diffusive coupling: DCaO-Al2O3 and DAl2O3-CaO are both negative are approximately equal. The solvent with the fastest dissolution rate: CAS 4, which has a rate constant of 1.5 × 10-6 m/s0.5 and Al2O3/CaO of 0.31 has positive DCaO-Al2O3 and negative DAl2O3-CaO and the absolute values vary by a factor of 4. Although many studies show that aluminium is added to the melts via the reaction: Si4+ =Al3+ + 0.5Ca2+ the compositional profiles show that this reaction is not the only one involved in accommodating the aluminium added during sapphire dissolution. Rather, aluminium is incorporated as both tetrahedrally coordinated Al charge balanced by Ca and as aluminium not charge balanced by Ca (termed Alxs). This reaction: AlIV -Ca =Alxs +CaNBO where CaNBO is a non-bridging oxygen associated with calcium, may involve the formation of aluminium triclusters. The shape of the compositional profiles and oxide-oxide composition paths is controlled by the aluminium addition reaction. When Alxs exceeds 2%, CaO diffusion becomes increasingly anomalous and since the bond strength of Alxs correlates with CaO/CaO + Al2O3, the presence of more than 2% Alxs leads to significantly slower dissolution than when Alxs is absent or at low concentration. Thus, dissolution is controlled by diffusion of cations through the boundary layer, but this

  11. Particles at fluid-fluid interfaces: A new Navier-Stokes-Cahn-Hilliard surface- phase-field-crystal model.

    Science.gov (United States)

    Aland, Sebastian; Lowengrub, John; Voigt, Axel

    2012-10-01

    Colloid particles that are partially wetted by two immiscible fluids can become confined to fluid-fluid interfaces. At sufficiently high volume fractions, the colloids may jam and the interface may crystallize. The fluids together with the interfacial colloids form an emulsion with interesting material properties and offer an important route to new soft materials. A promising approach to simulate these emulsions was presented in Aland et al. [Phys. Fluids 23, 062103 (2011)], where a Navier-Stokes-Cahn-Hilliard model for the macroscopic two-phase fluid system was combined with a surface phase-field-crystal model for the microscopic colloidal particles along the interface. Unfortunately this model leads to spurious velocities which require very fine spatial and temporal resolutions to accurately and stably simulate. In this paper we develop an improved Navier-Stokes-Cahn-Hilliard-surface phase-field-crystal model based on the principles of mass conservation and thermodynamic consistency. To validate our approach, we derive a sharp interface model and show agreement with the improved diffuse interface model. Using simple flow configurations, we show that the new model has much better properties and does not lead to spurious velocities. Finally, we demonstrate the solid-like behavior of the crystallized interface by simulating the fall of a solid ball through a colloid-laden multiphase fluid.

  12. Performance and Reliability of Bonded Interfaces for High-Temperature Packaging (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Devoto, D.

    2014-11-01

    The thermal performance and reliability of sintered-silver is being evaluated for power electronics packaging applications. This will be experimentally accomplished by the synthesis of large-area bonded interfaces between metalized substrates that will be subsequently subjected to thermal cycles. A finite element model of crack initiation and propagation in these bonded interfaces will allow for the interpretation of degradation rates by a crack-velocity (V)-stress intensity factor (K) analysis. The experiment is outlined, and the modeling approach is discussed.

  13. XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5 mol% H 2/Ar) atmosphere

    Science.gov (United States)

    Achiwawanich, S.; James, B. D.; Liesegang, J.

    2008-12-01

    Surface effects on Mong Hsu rubies and Kanchanaburi sapphires after heat treatment in a controlled reducing atmosphere (5 mol% H 2/Ar) have been investigated using advanced surface science techniques including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Visual appearance of the gemstones is clearly affected by the heat treatment in a reducing atmosphere. Kanchanaburi sapphires, in particular, exhibit Fe-containing precipitates after the heat treatment which have not been observed in previous studies under an inert atmosphere. Significant correlation between changes in visual appearance of the gemstones and variations in surface concentration of trace elements, especially Ti and Fe are observed. The XPS and ToF-SIMS results suggest that; (1) a reducing atmosphere affects the oxidation state of Fe; (2) dissociation of Fe-Ti interaction may occur during heat treatment.

  14. Aqueous turbulence structure immediately adjacent to the air - water interface and interfacial gas exchange

    Science.gov (United States)

    Wang, Binbin

    Air-sea interaction and the interfacial exchange of gas across the air-water interface are of great importance in coupled atmospheric-oceanic environmental systems. Aqueous turbulence structure immediately adjacent to the air-water interface is the combined result of wind, surface waves, currents and other environmental forces and plays a key role in energy budgets, gas fluxes and hence the global climate system. However, the quantification of turbulence structure sufficiently close to the air-water interface is extremely difficult. The physical relationship between interfacial gas exchange and near surface turbulence remains insufficiently investigated. This dissertation aims to measure turbulence in situ in a complex environmental forcing system on Lake Michigan and to reveal the relationship between turbulent statistics and the CO2 flux across the air-water interface. The major objective of this dissertation is to investigate the physical control of the interfacial gas exchange and to provide a universal parameterization of gas transfer velocity from environmental factors, as well as to propose a mechanistic model for the global CO2 flux that can be applied in three dimensional climate-ocean models. Firstly, this dissertation presents an advanced measurement instrument, an in situ free floating Particle Image Velocimetry (FPIV) system, designed and developed to investigate the small scale turbulence structure immediately below the air-water interface. Description of hardware components, design of the system, measurement theory, data analysis procedure and estimation of measurement error were provided. Secondly, with the FPIV system, statistics of small scale turbulence immediately below the air-water interface were investigated under a variety of environmental conditions. One dimensional wave-number spectrum and structure function sufficiently close to the water surface were examined. The vertical profiles of turbulent dissipation rate were intensively studied

  15. Entrainment at a sediment concentration interface in turbulent channel flow

    Science.gov (United States)

    Salinas, Jorge; Shringarpure, Mrugesh; Cantero, Mariano; Balachandar, S.

    2016-11-01

    In this work we address the role of turbulence on entrainment at a sediment concentration interface. This process can be conceived as the entrainment of sediment-free fluid into the bottom sediment-laden flow, or alternatively, as the entrainment of sediment into the top sediment-free flow. We have performed direct numerical simulations for fixed Reynolds and Schmidt numbers while varying the values of Richardson number and particle settling velocity. The analysis performed shows that the ability of the flow to pick up a given sediment size decreases with the distance from the bottom, and thus only fine enough sediment particles are entrained across the sediment concentration interface. For these cases, the concentration profiles evolve to a final steady state in good agreement with the well-known Rouse profile. The approach towards the Rouse profile happens through a transient self-similar state. Detailed analysis of the three dimensional structure of the sediment concentration interface shows the mechanisms by which sediment particles are lifted up by tongues of sediment-laden fluid with positive correlation between vertical velocity and sediment concentration. Finally, the mixing ability of the flow is addressed by monitoring the center of mass of the sediment-laden layer. With the support of ExxonMobil, NSF, ANPCyT, CONICET.

  16. Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

    Science.gov (United States)

    Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

    2006-10-01

    Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

  17. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    International Nuclear Information System (INIS)

    Mahata, Mihir Kumar; Ghosh, Saptarsi; Jana, Sanjay Kumar; Bag, Ankush; Kumar, Rahul; Chakraborty, Apurba; Biswas, Dhrubes; Mukhopadhyay, Partha

    2014-01-01

    In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al 2 O 3 ) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10 −3 (1 × 10 −3 ), and −1.7 × 10 −3 (2 × 10 −3 ) in GaN layer and 5.1 × 10 −3 (−3.3 × 10 −3 ), and 8.8 × 10 −3 (−1.3 × 10 −3 ) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum

  18. Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

    Science.gov (United States)

    Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

    2016-12-15

    We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D2O) in a D2O-H2O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D2O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

  19. Morphological instability of a non-equilibrium ice-colloid interface

    KAUST Repository

    Peppin, S. S. L.

    2009-10-02

    We assess the morphological stability of a non-equilibrium ice-colloidal suspension interface, and apply the theory to bentonite clay. An experimentally convenient scaling is employed that takes advantage of the vanishing segregation coefficient at low freezing velocities, and when anisotropic kinetic effects are included, the interface is shown to be unstable to travelling waves. The potential for travelling-wave modes reveals a possible mechanism for the polygonal and spiral ice lenses observed in frozen clays. A weakly nonlinear analysis yields a long-wave evolution equation for the interface shape containing a new parameter related to the highly nonlinear liquidus curve in colloidal systems. We discuss the implications of these results for the frost susceptibility of soils and the fabrication of microtailored porous materials. © 2009 The Royal Society.

  20. Adhesive joint evaluation by ultrasonic interface and lamb waves

    Science.gov (United States)

    Rokhlin, S. I.

    1986-01-01

    Some results on the application of interface and Lamb waves for the study of curing of thin adhesive layers were summarized. In the case of thick substrates (thickness much more than the wave length) the interface waves can be used. In this case the experimental data can be inverted and the shear modulus of the adhesive film may be explicitly found based on the measured interface wave velocity. It is shown that interface waves can be used for the study of curing of structural adhesives as a function of different temperatures and other experimental conditions. The kinetics of curing was studied. In the case of thin substrates the wave phenomena are much more complicated. It is shown that for successful measurements proper selection of experimental conditions is very important. This can be done based on theoretical estimations. For correctly selected experimental conditions the Lamb waves may be a sensitive probe of adhesive bond quality and may be used or cure monitoring.

  1. Computational analysis of acoustic transmission through periodically perforated interfaces

    Directory of Open Access Journals (Sweden)

    Rohan E.

    2009-06-01

    Full Text Available The objective of the paper is to demonstrate the homogenization approach applied to modelling the acoustic transmission on perforated interfaces embedded in the acoustic fluid. We assume a layer, with periodically perforated obstacles, separating two half-spaces filled with the fluid. The homogenization method provides limit transmission conditions which can be prescribed at the homogenized surface representing the "limit" interface. The conditions describe relationship between jump of the acoustic pressures and the transversal acoustic velocity, on introducing the "in-layer pressure" which describes wave propagation in the tangent directions with respect to the interface.This approach may serve as a relevant tool for optimal design of devices aimed at attenuation of the acoustic waves, such as the engine exhaust mufflers or other structures fitted with sieves and grillages. We present numerical examples of wave propagation in a muffler-like structure illustrating viability of the approach when complex 3D geometries of the interface perforation are considered.

  2. Dynamic propagation of a weak-discontinuous interface crack between two dissimilar functionally graded layers under anti-plane shear

    International Nuclear Information System (INIS)

    Shin, Jeong Woo; Lee, Young Shin

    2011-01-01

    The dynamic propagation of an interface crack between two functionally graded material (FGM) layers under anti-plane shear is analyzed using the integral transform method. The properties of the FGM layers vary continuously along their thicknesses. The properties of the two FGM layers vary and the two layers are connected weak-discontinuously. A constant velocity Yoffe-type moving crack is considered. The Fourier transform is used to reduce the problem to a dual integral equation, which is then expressed to a Fredholm integral equation of the second kind. Numerical values on the dynamic energy release rate (DERR) are presented for the FGM to show the effect of the gradient of material properties, crack moving velocity, and thickness of FGM layers. The following are helpful to increase resistance to interface crack propagation in FGMs: a) increasing the gradient of material properties, b) an increase of shear modulus and density from the interface to the upper and lower free surface, and c) increasing the thickness of the FGM layer. The DERR increases or decreases with increase of the crack moving velocity

  3. Total internal reflection effect on gyrotropic interface

    Science.gov (United States)

    Glushchenko, Alexander G.; Glushchenko, Eugene P.; Zhukov, Sergey V.

    2018-02-01

    This article considers the physical features of total internal reflection at gyrotropic and isotropic interfaces for two cases: electrical gyrotropy (plasma) and magnetic gyrotropy (ferrite). It is shown that the plasma magnetization may lead to the formation of the total internal reflection effect, which does not occur in isotropic plasma. The threshold values of the magnetic field, which are necessary for the total internal reflection effect, are determined. The total internal reflection effect on a ferrite-dielectric interface for waves emanating from different angles is observed in various frequency ranges and magnetization fields. The study points out the possibility of changing the total internal reflection angle value in large limits due to a change in the external magnetic field magnitude. The calculation results of the total internal reflection angle dependence on the external magnetic field magnitude are presented. The formulas are elaborated for calculating the total internal reflection angles of different interfaces for gyrotropic and isotropic media. The generalized formulas are defined for calculating the Doppler effect in the gyrotropic media. The study demonstrates how the velocity of the media interface affects the limiting angle of total internal refection.

  4. Thermal conductance of the AlN/Si and AlN/SiC interfaces calculated with taking into account the detailed phonon spectra of the materials and the interface conditions

    Energy Technology Data Exchange (ETDEWEB)

    Kazan, M. [LNIO, ICD, CNRS (FRE2848), Universite de Technologie de Troyes, 10010-Troyes (France); Pereira, S.; Correia, M.R. [CICECO and I3N, University of Aveiro, Aveiro-3810-193 (Portugal); Masri, P. [GES, CNRS-UMR 5650, Universite de Montpellier II, Montpellier-34095 (France)

    2010-01-15

    We present a calculation of the thermal conductance (TC) of the interface between aluminium nitride (AlN) and silicon (Si) and that between AlN and silicon carbide (SiC) with taking into account the detailed phonon spectra of the materials, as obtained from first principles calculations, and the interface conditions. On the basis of the results obtained, we discuss the relation between the interface TC, the interface conditions, and the mismatches between the acoustic waves velocities and the phonon densities of states of the materials in contact. Our calculation method is expected to provide a reliable tool for thermal management strategy, independently from the substrate choice (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Formation of metal nanoparticles of various sizes in plasma plumes produced by Ti:sapphire laser pulses

    International Nuclear Information System (INIS)

    Chakravarty, U.; Naik, P. A.; Mukherjee, C.; Kumbhare, S. R.; Gupta, P. D.

    2010-01-01

    In this paper, an experimental study on generation of nanoparticle various sizes using Ti:sapphire laser pulses, is reported. Nanoparticle formation in plasma plumes of metals like silver and copper, expanding in vacuum, has been studied using stretched pulses of 300 ps duration [subnanoseconds (sub-ns)] from a Ti:sapphire laser. It has been compared with the nanoparticle formation (of the same materials) when compressed pulses of 45 fs duration were used under similar focusing conditions. Nanoparticle formation is observed at intensities as high as 2x10 16 W/cm 2 . The structural analysis of the nanoparticle deposition on a silicon substrate showed that, using 45 fs pulses, smaller nanoparticles of average size ∼20 nm were generated, whereas on using the sub-ns pulses, larger particles were produced. Also, the visible light transmission and reflection from the nanoparticle film of Ag on glass substrate showed surface plasmon resonance (SPR). The SPR curves of the films of nanoparticles deposited by femtosecond pulses were always broader and reflection/transmission was always smaller when compared with the films formed using the sub-ns pulses, indicating smaller size particle formation by ultrashort pulses. Thus, it has been demonstrated that variation in the laser pulse duration of laser offers a simple tool for varying the size of the nanoparticles generated in plasma plumes.

  6. Determination of the properties of composite interfaces by an ultrasonic method

    Energy Technology Data Exchange (ETDEWEB)

    Mal, A K; Karim, M R [Dept. of Mechanical, Aerospace and Nuclear Engineering, School of Engineering and Applied Science, Univ. of California, Los Angeles (USA); Bar-Cohen, Y [Douglas Aircraft Co., McDonnell Douglas Corp., Long Beach, CA (USA)

    1990-06-15

    The feasibility of using a recently developed ultrasonic technique to determine certain macroscopic properties of the interface zones of composite laminates is studied. The strong influence of the elastic properties and the thickness of the interface zone on the phase velocity of guided waves is demonstrated by means of a simple model of a single fiber embedded in a layer of the matrix material. The overall dynamic elastic moduli of a unidirectional graphite-epoxy composite laminate are determined through inversion of guided wave dispersion data obtained by the leaky Lamb wave experiment. The thickness and elastic properties of the interlaminar interface zone in a cross-ply graphite-epoxy laminate are also estimated by the same approach. (orig.).

  7. On the effect of grain burnback on STS-SRM fragment velocity

    International Nuclear Information System (INIS)

    Eck, M.B.; Mukunda, M.

    1991-01-01

    Concerns raised during the Ulysses Final Safety Analysis Review (FSAR) process called the solid rocket motor (SRM) fragment velocity prediction model into question. The specific area of concern was that there was a section of the SRM casing which was exposed to SRM chamber pressure as the grain (fuel) was consumed. These questions centered on the velocity of fragments which originated from the field joint region given that failure occurred between 37 and 72 seconds mission elapsed time (MET). Two dimensional coupled Eulerian-Lagrangian calculations were performed to assess the hot gas flow field which resulted from SRM casing fragmentation. The fragment to gas interface-pressure time-history obtained from these analyses was reduced to a boundary condition algorithm which was applied to an explicit-time-integration, finite element, three dimensional shell model of the SRM casing and unburned fuel. The results of these calculations showed that the velocity of fragments originating in the field joint was adequately described by the range of velocities given in the Shuttle Data Book (1988). Based on these results, no further analyses were required, and approval was obtained from the Launch Abort Subpanel of the Interagency Nuclear Safety Review Panel to use the SRM fragment velocity environments presented in the Ulysses FSAR (1990)

  8. Design of patterned sapphire substrates for GaN-based light-emitting diodes

    International Nuclear Information System (INIS)

    Wang Hai-Yan; Lin Zhi-Ting; Han Jing-Lei; Zhong Li-Yi; Li Guo-Qiang

    2015-01-01

    A new method for patterned sapphire substrate (PSS) design is developed and proven to be reliable and cost-effective. As progress is made with LEDs’ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs’ light extraction efficiency (LEE). Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years. (topical review)

  9. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

    Science.gov (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

    2018-05-01

    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  10. Numerical simulation of terahertz-wave propagation in photonic crystal waveguide based on sapphire shaped crystal

    International Nuclear Information System (INIS)

    Zaytsev, Kirill I; Katyba, Gleb M; Mukhina, Elena E; Kudrin, Konstantin G; Karasik, Valeriy E; Yurchenko, Stanislav O; Kurlov, Vladimir N; Shikunova, Irina A; Reshetov, Igor V

    2016-01-01

    Terahertz (THz) waveguiding in sapphire shaped single crystal has been studied using the numerical simulations. The numerical finite-difference analysis has been implemented to characterize the dispersion and loss in the photonic crystalline waveguide containing hollow cylindrical channels, which form the hexagonal lattice. Observed results demonstrate the ability to guide the THz-waves in multi-mode regime in wide frequency range with the minimal power extinction coefficient of 0.02 dB/cm at 1.45 THz. This shows the prospectives of the shaped crystals for highly-efficient THz waveguiding. (paper)

  11. Large eddy simulation study of turbulent kinetic energy and scalar variance budgets and turbulent/non-turbulent interface in planar jets

    Science.gov (United States)

    Watanabe, Tomoaki; Sakai, Yasuhiko; Nagata, Koji; Ito, Yasumasa

    2016-04-01

    Spatially developing planar jets with passive scalar transports are simulated for various Reynolds (Re = 2200, 7000, and 22 000) and Schmidt numbers (Sc = 1, 4, 16, 64, and 128) by the implicit large eddy simulation (ILES) using low-pass filtering as an implicit subgrid-scale model. The budgets of resolved turbulent kinetic energy k and scalar variance are explicitly evaluated from the ILES data except for the dissipation terms, which are obtained from the balance in the transport equations. The budgets of k and in the ILES agree well with the DNS and experiments for both high and low Re cases. The streamwise decay of the mean turbulent kinetic energy dissipation rate obeys the power low obtained by the scaling argument. The mechanical-to-scalar timescale ratio C ϕ is evaluated in the self-similar region. For the high Re case, C ϕ is close to the isotropic value (C ϕ = 2) near the jet centerline. However, when Re is not large, C ϕ is smaller than 2 and depends on the Schmidt number. The T/NT interface is also investigated by using the scalar isosurface. The velocity and scalar fields near the interface depend on the interface orientation for all Re. The velocity toward the interface is observed near the interface facing in the streamwise, cross-streamwise, and spanwise directions in the planar jet in the resolved velocity field.

  12. XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5 mol% H{sub 2}/Ar) atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Achiwawanich, S. [Department of Physics, La Trobe University, VIC 3086 (Australia); Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia); James, B.D. [Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia); Department of Chemistry, La Trobe University, VIC 3086 (Australia); Liesegang, J. [Department of Physics, La Trobe University, VIC 3086 (Australia); Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia)], E-mail: J.Liesegang@latrobe.edu.au

    2008-12-30

    Surface effects on Mong Hsu rubies and Kanchanaburi sapphires after heat treatment in a controlled reducing atmosphere (5 mol% H{sub 2}/Ar) have been investigated using advanced surface science techniques including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Visual appearance of the gemstones is clearly affected by the heat treatment in a reducing atmosphere. Kanchanaburi sapphires, in particular, exhibit Fe-containing precipitates after the heat treatment which have not been observed in previous studies under an inert atmosphere. Significant correlation between changes in visual appearance of the gemstones and variations in surface concentration of trace elements, especially Ti and Fe are observed. The XPS and ToF-SIMS results suggest that; (1) a reducing atmosphere affects the oxidation state of Fe; (2) dissociation of Fe-Ti interaction may occur during heat treatment.

  13. Molecular dynamics simulation of electron trapping in the sapphire lattice

    International Nuclear Information System (INIS)

    Rambaut, C.; Oh, K.H.; Fayeulle, S.; Kohanoff, J.

    1995-10-01

    Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge mode. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (α -Al 2 O 3 ) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5 A. Detrapping is observed at 250 K. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature. (author). 18 refs, 7 figs, 2 tabs

  14. The SAPPHIRE and 50 MT projects at BWXT, Lynchburg, VA

    International Nuclear Information System (INIS)

    Thiele, R.; Horn, B.; Coates, C.W.; Stainback, J.R.

    2001-01-01

    Full text: When the SAPPHIRE project for the down-blending of HEU material of Khazak origin was initiated in 1996 at BWX Technologies (BWXT) formally Babcock and Wilcox in Lynchburg, VA and the Agency was requested to apply its specially designed safeguards measures to the process with a view to provide assurance to the international community that down-blending had actually taken place as stipulated in the USA-Khazak agreement a learning process was initiated from this effort culminating in the current 50 MT downblending process at the same facility with BWXT, the USA Authorities, and the Agency as partners in this technologically advanced enterprise aimed at the downgrading of a substantial quantity of weapons grade material. In the present paper an overview is provided of the road leading to an effective, and mutually agreeable safeguards approach for carrying out verifications in the sensitive environment of a facility devoted to HEU uranium processing. (author)

  15. Femtosecond laser micromachining of sapphire capillaries for laser-wakefield acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Messner, Philipp; Delbos, Niels Matthias; Maier, Andreas R. [CFEL, Center for Free-Electron Laser Science, 22607 Hamburg (Germany); University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany); Calmano, Thomas [University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany)

    2015-07-01

    Laser-plasma accelerator are promising candidates to provide ultra-relativistic electron beams for compact light sources. One factor that limits the achievable electron beam energy in a laser plasma accelerator is the Rayleigh length of the driver laser, which dictates the length over which the electron beams can effectively be accelerated. To overcome this limitation lasers can be guided in a capillary waveguide to extend the acceleration length beyond the Rayleigh length. The production of waveguide structures on scales, that are suitable for plasma acceleration is very challenging. Here, we present experimental results from waveguide machining in sapphire crystals using a Clark MXR CPA 2010 laser with a wavelength of 775nm, 1KHZ repetition rate and a pulse duration of 160 fs. We discuss the effects of different parameters like energy, lens types, writing speed and polarisation on the size and shape of the capillaries, and compare the performance of different parameter sets.

  16. Coalescence dynamics of mobile and immobile fluid interfaces

    KAUST Repository

    Vakarelski, Ivan Uriev

    2018-01-12

    Coalescence dynamics between deformable bubbles and droplets can be dramatically affected by the mobility of the interfaces with fully tangentially mobile bubble-liquid or droplet-liquid interfaces expected to accelerate the coalescence by orders of magnitudes. However, there is a lack of systematic experimental investigations that quantify this effect. By using high speed camera imaging we examine the free rise and coalescence of small air-bubbles (100 to 1300 μm in diameter) with a liquid interface. A perfluorocarbon liquid, PP11 is used as a model liquid to investigate coalescence dynamics between fully-mobile and immobile deformable interfaces. The mobility of the bubble surface was determined by measuring the terminal rise velocity of small bubbles rising at Reynolds numbers, Re less than 0.1 and the mobility of free PP11 surface by measuring the deceleration kinetics of the small bubble toward the interface. Induction or film drainage times of a bubble at the mobile PP11-air surface were found to be more than two orders of magnitude shorter compared to the case of bubble and an immobile PP11-water interface. A theoretical model is used to illustrate the effect of hydrodynamics and interfacial mobility on the induction time or film drainage time. The results of this study are expected to stimulate the development of a comprehensive theoretical model for coalescence dynamics between two fully or partially mobile fluid interfaces.

  17. The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

    Energy Technology Data Exchange (ETDEWEB)

    Alexeev, P., E-mail: pavel.alexeev@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany); Asadchikov, V. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Bessas, D. [European Synchrotron Radiation Facility (France); Butashin, A.; Deryabin, A. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Dill, F.-U.; Ehnes, A.; Herlitschke, M. [Deutsches Elektronen-Synchrotron DESY (Germany); Hermann, R. P.; Jafari, A. [JARA-FIT, Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI (Germany); Prokhorov, I. [Kaluga Branch of Shubnikov Institute of Crystallography RAS, Research Center for Space Materials Science (Russian Federation); Roshchin, B. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Röhlsberger, R.; Schlage, K.; Sergueev, I.; Siemens, A.; Wille, H.-C., E-mail: hans.christian.wille@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany)

    2016-12-15

    We report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on Mössbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with {sup 119}Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. The device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like {sup 151}Eu, {sup 149}Sm, {sup 161}Dy, {sup 125}Te and {sup 121}Sb.

  18. Interface Based on Electrooculography for Velocity Control of a Robot Arm

    Directory of Open Access Journals (Sweden)

    Eduardo Iáñez

    2010-01-01

    Full Text Available This paper describes a technique based on electrooculography to control a robot arm. This technique detects the movement of the eyes, measuring the difference of potential between the cornea and the retina by placing electrodes around the ocular area. The processing algorithm developed to obtain the position of the eye at the blink of the user is explained. The output of the processing algorithm offers, apart from the direction, four different values (zero to three to control the velocity of the robot arm according to how much the user is looking in one direction. This allows controlling two degrees of freedom of a robot arm with the eyes movement. The blink has been used to mark some targets in tests. In this paper, the experimental results obtained with a real robot arm are shown.

  19. Mitigation of defocusing by statics and near-surface velocity errors by interferometric least-squares migration

    KAUST Repository

    Sinha, Mrinal

    2015-08-19

    We propose an interferometric least-squares migration method that can significantly reduce migration artifacts due to statics and errors in the near-surface velocity model. We first choose a reference reflector whose topography is well known from the, e.g., well logs. Reflections from this reference layer are correlated with the traces associated with reflections from deeper interfaces to get crosscorrelograms. These crosscorrelograms are then migrated using interferometric least-squares migration (ILSM). In this way statics and velocity errors at the near surface are largely eliminated for the examples in our paper.

  20. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    Energy Technology Data Exchange (ETDEWEB)

    Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

    1996-02-11

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

  1. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    International Nuclear Information System (INIS)

    Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

    1996-01-01

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

  2. Response of Seven Crystallographic Orientations of Sapphire Crystals to Shock Stresses of 16 to 86 GPa

    OpenAIRE

    Kanel, G. I.; Nellis, W. J.; Savinykh, A. S.; Razorenov, S. V.; Rajendran, A. M.

    2009-01-01

    Shock-wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations were measured with time-resolved VISAR interferometry at shock stresses in the range 16 to 86 GPa. Shock propagation was normal to the surface of each cut. The angle between the c-axis of the hexagonal crystal structure and the direction of shock propagation varied from 0 for c-cut up to 90 degrees for m-cut in the basal plane. Based on published shock-induced transparencies, shock-induced optical ...

  3. Modeling non-Fickian dispersion by use of the velocity PDF on the pore scale

    Science.gov (United States)

    Kooshapur, Sheema; Manhart, Michael

    2015-04-01

    For obtaining a description of reactive flows in porous media, apart from the geometrical complications of resolving the velocities and scalar values, one has to deal with the additional reactive term in the transport equation. An accurate description of the interface of the reacting fluids - which is strongly influenced by dispersion- is essential for resolving this term. In REV-based simulations the reactive term needs to be modeled taking sub-REV fluctuations and possibly non-Fickian dispersion into account. Non-Fickian dispersion has been observed in strongly heterogeneous domains and in early phases of transport. A fully resolved solution of the Navier-Stokes and transport equations which yields a detailed description of the flow properties, dispersion, interfaces of fluids, etc. however, is not practical for domains containing more than a few thousand grains, due to the huge computational effort required. Through Probability Density Function (PDF) based methods, the velocity distribution in the pore space can facilitate the understanding and modelling of non-Fickian dispersion [1,2]. Our aim is to model the transition between non-Fickian and Fickian dispersion in a random sphere pack within the framework of a PDF based transport model proposed by Meyer and Tchelepi [1,3]. They proposed a stochastic transport model where velocity components of tracer particles are represented by a continuous Markovian stochastic process. In addition to [3], we consider the effects of pore scale diffusion and formulate a different stochastic equation for the increments in velocity space from first principles. To assess the terms in this equation, we performed Direct Numerical Simulations (DNS) for solving the Navier-Stokes equation on a random sphere pack. We extracted the PDFs and statistical moments (up to the 4th moment) of the stream-wise velocity, u, and first and second order velocity derivatives both independent and conditioned on velocity. By using this data and

  4. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

    Science.gov (United States)

    Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

    2018-01-01

    The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

  5. The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

    Science.gov (United States)

    Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

    2018-03-01

    Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

  6. Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

    DEFF Research Database (Denmark)

    Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

    2017-01-01

    higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

  7. Effects of magnetic field, sheared flow and ablative velocity on the Rayleigh-Taylor instability

    International Nuclear Information System (INIS)

    Li, D.; Zhang, W.L.; Wu, Z.W.

    2005-01-01

    It is found that magnetic field has a stabilization effect whereas the sheared flow has a destabilization effect on the RT instability in the presence of sharp interface. RT instability only occurs in the long wave region and can be completely suppressed if the stabilizing effect of magnetic field dominates. The RT instability increases with wave number and flow shear, and acts much like a Kelvin-Helmholtz instability when destabilizing effect of sheared flow dominates. It is shown that both of ablation velocity and magnetic filed have stabilization effect on RT instability in the presence of continued interface. The stabilization effect of magnetic field takes place for whole waveband and becomes more significant for the short wavelength. The RT instability can be completely suppressed by the cooperated effect of magnetic field and ablation velocity so that the ICF target shell may be unnecessary to be accelerated to very high speed. The growth rate decreases as the density scale length increases. The stabilization effect of magnetic field is more significant for the short density scale length. (author)

  8. Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

    2014-02-15

    Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

  9. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  10. A phase stabilized and pulse shaped Ti:Sapphire oscillator-amplifier laser system for the LCLS rf photoinjector

    International Nuclear Information System (INIS)

    Kotseroglou, T.; Alley, R.; Clendenin, J.; Fisher, A.; Frisch, J.

    1998-04-01

    The authors have designed a laser system for the Linac Coherent Light Source rf photoinjector consisting of a Ti:Sapphire oscillator and 2 amplifiers using Chirped Pulse Amplification. The output after tripling will be 0.5 mJ tunable UV pulses at 120 Hz, with wavelength around 260 nm, pulsewidth of 10 ps FWHM and 200 fs rise and fall times. Amplitude stability is expected to be 1% rms in the UV and timing jitter better than 500 fs rms

  11. Analytical solution of laminar-laminar stratified two-phase flows with curved interfaces

    International Nuclear Information System (INIS)

    Brauner, N.; Rovinsky, J.; Maron, D.M.

    1995-01-01

    The present study represents a complete analytical solution for laminar two-phase flows with curved interfaces. The solution of the Navier-Stokes equations for the two-phases in bipolar coordinates provides the 'flow monograms' describe the relation between the interface curvature and the insitu flow geometry when given the phases flow rates and viscosity ratios. Energy considerations are employed to construct the 'interface monograms', whereby the characteristic interfacial curvature is determined in terms of the phases insitu holdup, pipe diameter, surface tension, fluids/wall adhesion and gravitation. The two monograms are then combined to construct the system 'operational monogram'. The 'operational monogram' enables the determination of the interface configuration, the local flow characteristics, such as velocity profiles, wall and interfacial shear stresses distribution as well as the integral characteristics of the two-phase flow: phases insitu holdup and pressure drop

  12. Analytical solution of laminar-laminar stratified two-phase flows with curved interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Brauner, N.; Rovinsky, J.; Maron, D.M. [Tel-Aviv Univ. (Israel)

    1995-09-01

    The present study represents a complete analytical solution for laminar two-phase flows with curved interfaces. The solution of the Navier-Stokes equations for the two-phases in bipolar coordinates provides the `flow monograms` describe the relation between the interface curvature and the insitu flow geometry when given the phases flow rates and viscosity ratios. Energy considerations are employed to construct the `interface monograms`, whereby the characteristic interfacial curvature is determined in terms of the phases insitu holdup, pipe diameter, surface tension, fluids/wall adhesion and gravitation. The two monograms are then combined to construct the system `operational monogram`. The `operational monogram` enables the determination of the interface configuration, the local flow characteristics, such as velocity profiles, wall and interfacial shear stresses distribution as well as the integral characteristics of the two-phase flow: phases insitu holdup and pressure drop.

  13. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    Energy Technology Data Exchange (ETDEWEB)

    Mahata, Mihir Kumar; Ghosh, Saptarsi; Jana, Sanjay Kumar; Bag, Ankush; Kumar, Rahul [Advanced Technology Development Center, Indian Institute of Technology, Kharagpur, 721302 (India); Chakraborty, Apurba; Biswas, Dhrubes [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, 721302 (India); Mukhopadhyay, Partha [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur, 721302 (India)

    2014-11-15

    In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al{sub 2}O{sub 3}) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10{sup −3}(1 × 10{sup −3}), and −1.7 × 10{sup −3}(2 × 10{sup −3}) in GaN layer and 5.1 × 10{sup −3} (−3.3 × 10{sup −3}), and 8.8 × 10{sup −3}(−1.3 × 10{sup −3}) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.

  14. PRISM software—Processing and review interface for strong-motion data

    Science.gov (United States)

    Jones, Jeanne M.; Kalkan, Erol; Stephens, Christopher D.; Ng, Peter

    2017-11-28

    Rapidly available and accurate ground-motion acceleration time series (seismic recordings) and derived data products are essential to quickly providing scientific and engineering analysis and advice after an earthquake. To meet this need, the U.S. Geological Survey National Strong Motion Project has developed a software package called PRISM (Processing and Review Interface for Strong-Motion data). PRISM automatically processes strong-motion acceleration records, producing compatible acceleration, velocity, and displacement time series; acceleration, velocity, and displacement response spectra; Fourier amplitude spectra; and standard earthquake-intensity measures. PRISM is intended to be used by strong-motion seismic networks, as well as by earthquake engineers and seismologists.

  15. Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

    Science.gov (United States)

    Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

    1988-01-01

    Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

  16. Remote determination of the velocity index and mean streamwise velocity profiles

    Science.gov (United States)

    Johnson, E. D.; Cowen, E. A.

    2017-09-01

    When determining volumetric discharge from surface measurements of currents in a river or open channel, the velocity index is typically used to convert surface velocities to depth-averaged velocities. The velocity index is given by, k=Ub/Usurf, where Ub is the depth-averaged velocity and Usurf is the local surface velocity. The USGS (United States Geological Survey) standard value for this coefficient, k = 0.85, was determined from a series of laboratory experiments and has been widely used in the field and in laboratory measurements of volumetric discharge despite evidence that the velocity index is site-specific. Numerous studies have documented that the velocity index varies with Reynolds number, flow depth, and relative bed roughness and with the presence of secondary flows. A remote method of determining depth-averaged velocity and hence the velocity index is developed here. The technique leverages the findings of Johnson and Cowen (2017) and permits remote determination of the velocity power-law exponent thereby, enabling remote prediction of the vertical structure of the mean streamwise velocity, the depth-averaged velocity, and the velocity index.

  17. Noise measurements on NbN thin films with a negative temperature resistance coefficient deposited on sapphire and on SiO2

    NARCIS (Netherlands)

    Leroy, G.; Gest, J.; Vandamme, L.K.J.; Bourgeois, O.

    2007-01-01

    We characterize granular NbNx thin cermet films deposited on either sapphire substrate or on SiO2 and compare the 1/f noise at 300 K and 80 K. The films were characterized with an impedance analyzer from 20 Hz to 1 MHz and analyzed as a resistor R in parallel with a capacitor C. The calculated noise

  18. Velocity map imaging of attosecond and femtosecond dynamics in atoms and small molecules in strong laser fields

    International Nuclear Information System (INIS)

    Kling, M.F.; Ni, Yongfeng; Lepine, F.; Khan, J.I.; Vrakking, M.J.J.; Johnsson, P.; Remetter, T.; Varju, K.; Gustafsson, E.; L'Huillier, A.; Lopez-Martens, R.; Boutu, W.

    2005-01-01

    Full text: In the past decade, the dynamics of atomic and small molecular systems in strong laser fields has received enormous attention, but was mainly studied with femtosecond laser fields. We report on first applications of attosecond extreme ultraviolet (XUV) pulse trains (APTs) from high-order harmonic generation (HHG) for the study of atomic and molecular electron and ion dynamics in strong laser fields utilizing the Velocity Map Imaging Technique. The APTs were generated in argon from harmonics 13 to 35 of a 35 fs Ti:sapphire laser, and spatially and temporally overlapped with an intense IR laser field (up to 5x10 13 W/cm 2 ) in the interaction region of a Velocity Map Imaging (VMI) machine. In the VMI setup, electrons and ions that were created at the crossing point of the laser fields and an atomic or molecular beam were accelerated in a dc-electric field towards a two-dimensional position-sensitive detector, allowing to reconstruct the full initial three-dimensional velocity distribution. The poster will focus on results that were obtained for argon atoms. We recorded the velocity distribution of electron wave packets that were strongly driven in the IR laser field after their generation in Ar via single-photon ionization by attosecond XUV pulses. The 3D evolution of the electron wave packets was observed on an attosecond timescale. In addition to earlier experiments with APTs using a magnetic bottle electron time-of-flight spectrometers and with single attosecond pulses, the angular dependence of the electrons kinetic energies can give further insight into the details of the dynamics. Initial results that were obtained for molecular systems like H 2 , D 2 , N 2 , and CO 2 using the same powerful approach will be highlighted as well. We will show, that detailed insight into the dynamics of these systems in strong laser fields can be obtained (e.g. on the alignment, above-threshold ionization, direct vs. sequential two-photon ionization, dissociation, and

  19. Filamentation and light bullet formation dynamics in solid-state dielectric media with weak, moderate and strong anomalous group velocity dispersion

    International Nuclear Information System (INIS)

    Gražulevičiūtė, I; Garejev, N; Majus, D; Tamošauskas, G; A Dubietis; Jukna, V

    2016-01-01

    We present a series of measurements, which characterize filamentation dynamics of intense ultrashort laser pulses in the space–time domain, as captured by means of three-dimensional imaging technique in sapphire and fused silica, in the wavelength range of 1.45–2.25 μm, accessing the regimes of weak, moderate and strong anomalous group velocity dispersion (GVD). In the regime of weak anomalous GVD (at 1.45 μm), pulse splitting into two sub-pulses producing a pair of light bullets with spectrally shifted carrier frequencies in both nonlinear media is observed. In contrast, in the regimes of moderate (at 1.8 μm) and strong (at 2.25 μm) anomalous GVD we observe notably different transient dynamics, which however lead to the formation of a single self-compressed quasistationary light bullet with an universal spatiotemporal shape comprised of an extended ring-shaped periphery and a localized intense core that carries the self-compressed pulse. (paper)

  20. Filamentation and light bullet formation dynamics in solid-state dielectric media with weak, moderate and strong anomalous group velocity dispersion

    Science.gov (United States)

    Gražulevičiūtė, I.; Garejev, N.; Majus, D.; Jukna, V.; Tamošauskas, G.; Dubietis, A.

    2016-02-01

    We present a series of measurements, which characterize filamentation dynamics of intense ultrashort laser pulses in the space-time domain, as captured by means of three-dimensional imaging technique in sapphire and fused silica, in the wavelength range of 1.45-2.25 μm, accessing the regimes of weak, moderate and strong anomalous group velocity dispersion (GVD). In the regime of weak anomalous GVD (at 1.45 μm), pulse splitting into two sub-pulses producing a pair of light bullets with spectrally shifted carrier frequencies in both nonlinear media is observed. In contrast, in the regimes of moderate (at 1.8 μm) and strong (at 2.25 μm) anomalous GVD we observe notably different transient dynamics, which however lead to the formation of a single self-compressed quasistationary light bullet with an universal spatiotemporal shape comprised of an extended ring-shaped periphery and a localized intense core that carries the self-compressed pulse.

  1. LES of stratified-wavy flows using novel near-interface treatment

    Science.gov (United States)

    Karnik, Aditya; Kahouadji, Lyes; Chergui, Jalel; Juric, Damir; Shin, Seungwon; Matar, Omar K.

    2017-11-01

    The pressure drop in horizontal stratified wavy flows is influenced by interfacial shear stress. The near-interface behavior of the lighter phase is akin to that near a moving wall. We employ a front-tracking code, Blue, to simulate and capture the near-interface behaviour of both phases. Blue uses a modified Smagorinsky LES model incorporating a novel near-interface treatment for the sub-grid viscosity, which is influenced by damping due to the wall-like interface, and enhancement of the turbulent kinetic energy (TKE) due to the interfacial waves. Simulations are carried out for both air-water and oil-water stratified configurations to demonstrate the applicability of the present method. The mean velocities and tangential Reynolds stresses are compared with experiments for both configurations. At the higher Re, the waves penetrate well into the buffer region of the boundary layer above the interface thus altering its dynamics. Previous attempts to capture the secondary structures associated with such flows using RANS or standard LES methodologies have been unsuccessful. The ability of the present method to reproduce these structures is due to the correct estimation of the near-interface TKE governing energy transfer from the normal to tangential directions. EPSRC, UK, MEMPHIS program Grant (EP/K003976/1), RAEng Research Chair (OKM).

  2. Computational parametric study of a Richtmyer-Meshkov instability for an inclined interface.

    Science.gov (United States)

    McFarland, Jacob A; Greenough, Jeffrey A; Ranjan, Devesh

    2011-08-01

    A computational study of the Richtmyer-Meshkov instability for an inclined interface is presented. The study covers experiments to be performed in the Texas A&M University inclined shock tube facility. Incident shock wave Mach numbers from 1.2 to 2.5, inclination angles from 30° to 60°, and gas pair Atwood numbers of ∼0.67 and ∼0.95 are used in this parametric study containing 15 unique combinations of these parameters. Qualitative results are examined through a time series of density plots for multiple combinations of these parameters, and the qualitative effects of each of the parameters are discussed. Pressure, density, and vorticity fields are presented in animations available online to supplement the discussion of the qualitative results. These density plots show the evolution of two main regions in the flow field: a mixing region containing driver and test gas that is dominated by large vortical structures, and a more homogeneous region of unmixed fluid which can separate away from the mixing region in some cases. The interface mixing width is determined for various combinations of the parameters listed at the beginning of the Abstract. A scaling method for the mixing width is proposed using the interface geometry and wave velocities calculated using one-dimensional gas dynamic equations. This model uses the transmitted wave velocity for the characteristic velocity and an initial offset time based on the travel time of strong reflected waves. It is compared to an adapted Richtmyer impulsive model scaling and shown to scale the initial mixing width growth rate more effectively for fixed Atwood number.

  3. Near IR Scanning Angle Total Internal Reflection Raman Spectroscopy at Smooth Gold Films

    Energy Technology Data Exchange (ETDEWEB)

    McKee, Kristopher; Meyer, Matthew; Smith, Emily

    2012-04-13

    Total internal reflection (TIR) Raman and reflectivity spectra were collected for nonresonant analytes as a function of incident angle at sapphire or sapphire/smooth 50 nm gold interfaces using 785 nm excitation. For both interfaces, the Raman signal as a function of incident angle is well-modeled by the calculated interfacial mean square electric field (MSEF) relative to the incident field times the thickness of the layer being probed in the Raman measurement (D{sub RS}). The Raman scatter was reproducibly enhanced at the interface containing a gold film relative to the sapphire interface by a factor of 4.3–4.6 for aqueous pyridine or 2.2–3.7 for neat nitrobenzene, depending on the analyzed vibrational mode. The mechanism for the increased Raman signal is the enhanced MSEF at incident angles where propagating surface plasmons are excited in the metal film. The background from the TIR prism was reduced by 89–95% with the addition of the gold film, and the percent relative uncertainty in peak area was reduced from 15 to 1.7% for the 1347 cm–1 mode of nitrobenzene. Single monolayers of benzenethiol (S/N = 6.8) and 4-mercaptopyridine (S/N = 16.5) on gold films were measured by TIR Raman spectroscopy with 785 nm excitation (210 mW) without resonant enhancement in 1 min.

  4. Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

    International Nuclear Information System (INIS)

    Kulinich, S.A.; Yoshida, T.; Yamamoto, H.; Terashima, K.

    2003-01-01

    We report the deposition of LiNb 1-x Ta x O 3 (0≤x≤1) films on (001) sapphire substrates in soft vacuum using a radio frequency thermal plasma. The growth rate, crystallinity, c-axis orientation, and surface roughness were examined as functions of substrate temperature, precursor feed rate, and substrate surface condition. The film Nb/Ta ratio was well controlled by using an appropriate uniform mixture of lithium-niobium and lithium-tantalum alkoxide solutions. The epitaxy and crystallinity of the films were much improved when the film growth rate was raised from 20 to 180-380 nm/min, where the films with the (006) rocking curve full width at half maximum values as low as 0.12 deg. -0.2 deg. could be produced. The film roughness could be reduced by using a liquid precursor with higher metal concentrations, achieving the root-mean-square value on the order of 5 nm. The refractive indices of the films are in good correspondence with their composition and crystallinity

  5. Antiphase inversion domains in lithium cobaltite thin films deposited on single-crystal sapphire substrates

    International Nuclear Information System (INIS)

    Zheng, S.J.; Fisher, C.A.J.; Hitosugi, T.; Kumatani, A.; Shiraki, S.; Ikuhara, Y.H.; Kuwabara, A.; Moriwake, H.; Oki, H.; Ikuhara, Y.

    2013-01-01

    Antiphase inversion domains in LiCoO 2 thin films prepared by pulsed laser deposition on sapphire single-crystal substrates are analyzed using a combination of (scanning) transmission electron microscopy and first-principles calculations. Domains form epitaxially on the substrates with orientation relationships of [112 ¯ 0] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 and [1 ¯ 1 ¯ 20] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 . In addition, substrate/film interfaces with the above orientation relationships always have the same stacking sequence of Al–O–Co–O–Li–O. This is confirmed to be the most energetically stable stacking arrangement according to first-principles calculations. Individual domains form as a result of steps one (0 0 0 1) O–Al–O spacing in height on the otherwise flat substrate surface. Because the orientation of adjacent (0 0 0 1) AlO 6 octahedra in Al 2 O 3 are rotated by 180°, while LiO 6 and CoO 6 octahedra in LiCoO 2 are all aligned in the same direction, substrate steps produce LiCoO 2 domains rotated 180° relative to their neighbors. The similar size of oxygen octahedra in the two materials also means that the step height is close to the layer spacing in LiCoO 2 , so that (0 0 0 1) Li and Co layers of adjacent domains are shifted by one layer relative to each other at each domain boundary, aligning Li layers with Co layers across the boundary. The combination of these two effects generates antiphase inversion domains. The domain boundaries effectively sever Li-ion diffusion pathways in the (0 0 0 1) planes between domains and thus are expected to have a detrimental effect on Li-ion conductivity

  6. Measurement of transient two-phase flow velocity using statistical signal analysis of impedance probe signals

    International Nuclear Information System (INIS)

    Leavell, W.H.; Mullens, J.A.

    1981-01-01

    A computational algorithm has been developed to measure transient, phase-interface velocity in two-phase, steam-water systems. The algorithm will be used to measure the transient velocity of steam-water mixture during simulated PWR reflood experiments. By utilizing signals produced by two, spatially separated impedance probes immersed in a two-phase mixture, the algorithm computes the average transit time of mixture fluctuations moving between the two probes. This transit time is computed by first, measuring the phase shift between the two probe signals after transformation to the frequency domain and then computing the phase shift slope by a weighted least-squares fitting technique. Our algorithm, which has been tested with both simulated and real data, is able to accurately track velocity transients as fast as 4 m/s/s

  7. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  8. Velocity-independent layer stripping of PP and PS reflection traveltimes

    Digital Repository Service at National Institute of Oceanography (India)

    Dewangan, P.; Tsvankin, I.

    The principle of the PP + PS = SS method can be used to carry out exact layer stripping for both pure and mode-converted waves in anisotropic media. The main assumptions of the algorithm intro- duced here are that the overburden is laterally homogeneous and has... horizontal and dipping interfaces in each layer H20849Alkhalifah and Tsvankin, 1995; Tsvankin, 2005H20850. This requirement, which is often difficult to satisfy in practice, is no long- er needed if the interval moveout is computed by the velocity...

  9. Towards a new technique to construct a 3D shear-wave velocity model based on converted waves

    Science.gov (United States)

    Hetényi, G.; Colavitti, L.

    2017-12-01

    A 3D model is essential in all branches of solid Earth sciences because geological structures can be heterogeneous and change significantly in their lateral dimension. The main target of this research is to build a crustal S-wave velocity structure in 3D. The currently popular methodologies to construct 3D shear-wave velocity models are Ambient Noise Tomography (ANT) and Local Earthquake Tomography (LET). Here we propose a new technique to map Earth discontinuities and velocities at depth based on the analysis of receiver functions. The 3D model is obtained by simultaneously inverting P-to-S converted waveforms recorded at a dense array. The individual velocity models corresponding to each trace are extracted from the 3D initial model along ray paths that are calculated using the shooting method, and the velocity model is updated during the inversion. We consider a spherical approximation of ray propagation using a global velocity model (iasp91, Kennett and Engdahl, 1991) for the teleseismic part, while we adopt Cartesian coordinates and a local velocity model for the crust. During the inversion process we work with a multi-layer crustal model for shear-wave velocity, with a flexible mesh for the depth of the interfaces. The RFs inversion represents a complex problem because the amplitude and the arrival time of different phases depend in a non-linear way on the depth of interfaces and the characteristics of the velocity structure. The solution we envisage to manage the inversion problem is the stochastic Neighbourhood Algorithm (NA, Sambridge, 1999), whose goal is to find an ensemble of models that sample the good data-fitting regions of a multidimensional parameter space. Depending on the studied area, this method can accommodate possible independent and complementary geophysical data (gravity, active seismics, LET, ANT, etc.), helping to reduce the non-linearity of the inversion. Our first focus of application is the Central Alps, where a 20-year long dataset of

  10. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  11. Dual-mode nonlinear instability analysis of a confined planar liquid sheet sandwiched between two gas streams of unequal velocities and prediction of droplet size and velocity distribution using maximum entropy formulation

    Science.gov (United States)

    Dasgupta, Debayan; Nath, Sujit; Bhanja, Dipankar

    2018-04-01

    Twin fluid atomizers utilize the kinetic energy of high speed gases to disintegrate a liquid sheet into fine uniform droplets. Quite often, the gas streams are injected at unequal velocities to enhance the aerodynamic interaction between the liquid sheet and surrounding atmosphere. In order to improve the mixing characteristics, practical atomizers confine the gas flows within ducts. Though the liquid sheet coming out of an injector is usually annular in shape, it can be considered to be planar as the mean radius of curvature is much larger than the sheet thickness. There are numerous studies on breakup of the planar liquid sheet, but none of them considered the simultaneous effects of confinement and unequal gas velocities on the spray characteristics. The present study performs a nonlinear temporal analysis of instabilities in the planar liquid sheet, produced by two co-flowing gas streams moving with unequal velocities within two solid walls. The results show that the para-sinuous mode dominates the breakup process at all flow conditions over the para-varicose mode of breakup. The sheet pattern is strongly influenced by gas velocities, particularly for the para-varicose mode. Spray characteristics are influenced by both gas velocity and proximity to the confining wall, but the former has a much more pronounced effect on droplet size. An increase in the difference between gas velocities at two interfaces drastically shifts the droplet size distribution toward finer droplets. Moreover, asymmetry in gas phase velocities affects the droplet velocity distribution more, only at low liquid Weber numbers for the input conditions chosen in the present study.

  12. Feasibility of using ultrasonic pulse velocity to measure the bond between new and old concrete

    Directory of Open Access Journals (Sweden)

    Fareed Hameed Majeed

    2017-11-01

    Full Text Available Connecting new and old concrete is required in many practical situations, such as repairing, strengthening or extending existing reinforced concrete buildings or members. In addition to using this technique at construction joints. It is obvious the practical difficulties to measure the bond attained at the interface surface between the new and old concrete. Doing the destructive shear test at the interface surface is not an option in most practical cases due to its destructive character. So, this paper aims to study the feasibility of using the nondestructive ultrasonic pulse velocity to evaluate the bond attained at the interface surface between new and old concrete. An experimental work has been done to 24 specimens of normal and high strength concrete, with and without using an epoxy bonding agent at the interface that connect the two materials. The results of experiments clearly shown that this method can be used to evaluate the acquired bond between the new and old concrete.

  13. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yuan, Shu; Liu, Yingce [Quantum Wafer Inc., Foshan 528251 (China); Guo, L. Jay [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Sheng, E-mail: victor_liu63@126.com [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); Ding, Han [State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-15

    Graphical abstract: - Highlights: • TEM is used to characterize threading dislocation existing in GaN epitaxial layer. • Effect of threading dislocation on optical and electrical of LEDs is discussed. • Strip-shaped SiO{sub 2} DCBL is designed to improve current spreading performance of LEDs. - Abstract: We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO{sub 2} distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO{sub 2} DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO{sub 2} DCBL, light output power of high power PSS-LED chip could be further increased by 13%.

  14. Effects of annealing temperature and duration on the morphological and optical evolution of self-assembled Pt nanostructures on c-plane sapphire.

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Kunwar, Sundar; Pandey, Puran; Zhang, Quanzhen; Lee, Jihoon

    2017-01-01

    Metallic nanostructures (NSs) have been widely adapted in various applications and their physical, chemical, optical and catalytic properties are strongly dependent on their surface morphologies. In this work, the morphological and optical evolution of self-assembled Pt nanostructures on c-plane sapphire (0001) is demonstrated by the control of annealing temperature and dwelling duration with the distinct thickness of Pt films. The formation of Pt NSs is led by the surface diffusion, agglomeration and surface and interface energy minimization of Pt thin films, which relies on the growth parameters such as system temperature, film thickness and annealing duration. The Pt layer of 10 nm shows the formation of overlaying NPs below 650°C and isolated Pt nanoparticles above 700°C based on the enhanced surface diffusion and Volmer-Weber growth model whereas larger wiggly nanostructures are formed with 20 nm thick Pt layers based on the coalescence growth model. The morphologies of Pt nanostructures demonstrate a sharp distinction depending on the growth parameters applied. By the control of dwelling duration, the gradual transition from dense Pt nanoparticles to networks-like and large clusters is observed as correlated to the Rayleigh instability and Ostwald ripening. The various Pt NSs show a significant distinction in the reflectance spectra depending on the morphology evolution: i.e. the enhancement in UV-visible and NIR regions and the related optical properties are discussed in conjunction with the Pt NSs morphology and the surface coverage.

  15. Development of an optimal velocity selection method with velocity obstacle

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Geuk; Oh, Jun Ho [KAIST, Daejeon (Korea, Republic of)

    2015-08-15

    The Velocity obstacle (VO) method is one of the most well-known methods for local path planning, allowing consideration of dynamic obstacles and unexpected obstacles. Typical VO methods separate a velocity map into a collision area and a collision-free area. A robot can avoid collisions by selecting its velocity from within the collision-free area. However, if there are numerous obstacles near a robot, the robot will have very few velocity candidates. In this paper, a method for choosing optimal velocity components using the concept of pass-time and vertical clearance is proposed for the efficient movement of a robot. The pass-time is the time required for a robot to pass by an obstacle. By generating a latticized available velocity map for a robot, each velocity component can be evaluated using a cost function that considers the pass-time and other aspects. From the output of the cost function, even a velocity component that will cause a collision in the future can be chosen as a final velocity if the pass-time is sufficiently long enough.

  16. Effect of pool turbulence on direct contact condensation at a steam/water interface

    International Nuclear Information System (INIS)

    Jackson, J.D.; Zhao, C.L.; Doerffer, S.; Byrne, J.E.; Falaki, H.

    2000-01-01

    Measurements of direct contact condensation beat transfer have been made for the case where the process takes place at the horizontal interface between saturated steam and a pool of water in a vertical cylindrical test section. A submerged vertical jet of subcooled water was injected upwards on the axis to promote the condensation and water was withdrawn at the same rate from the bottom of the pool. In conjunction with the above study, measurements of the turbulent velocity fluctuations just below a free surface produced by the injection of a vertical submerged jet have been measured using hot film anemometry on an isothermal air-water test facility of similar geometry for similar flow conditions at ambient temperature. A correlation is proposed in terms of a Stanton number based on turbulent velocity fluctuation near the interface on the liquid-side. Our results are in good agreement with those of others for similar configurations when compared in terms of condensation Stanton number. (author)

  17. THE EVOLUTION OF INTERFACE DESIGN ON MOBILE DEVICES

    Directory of Open Access Journals (Sweden)

    Atila Isik

    2016-09-01

    Full Text Available The most typical characteristic of 21. century is the light velocity changing of technology. Dizzily developments in the field of human-robot interaction, mobile communication and education as affect all the fields of life also have an impact on art and design area. Striking increase of interest had been seen for mobile devices which are product of developing technology as tablet and mobile phone. While this increase happening at the present time user interfaces at mobile world and user practices developed as much as dominating design tendency. And became primary impotance for visual designers. This study aims utulizing future options for designers and the oppurtunities and reach a conclusions with examining evolution field of interface design spesific to mobile devices. From Skemorfizm to ordinary design and Google’s recent transition of material design principles were discussed together in this study. And this workout deal with interface design logic of users for working with new computational arificial facts devices as wearable smart objects and devices which able to connect to internet.

  18. Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

    International Nuclear Information System (INIS)

    Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

    2004-01-01

    The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

  19. Possible pitfalls in search of magnetic order in thin films deposited on single crystalline sapphire substrates

    International Nuclear Information System (INIS)

    Salzer, R.; Spemann, D.; Esquinazi, P.; Hoehne, R.; Setzer, A.; Schindler, K.; Schmidt, H.; Butz, T.

    2007-01-01

    We have studied the field and temperature dependence of the magnetic moment of single crystalline sapphire substrates with different surface orientations. All the substrates show a ferromagnetic behavior that partially changes after surface cleaning. The amount of magnetic impurities in the substrates was determined by particle induced X-ray emission. The overall analysis of the data indicates that the magnetic impurities very likely contribute to the measured ferromagnetic behavior but does not rule out completely intrinsic contributions. Our work stresses the necessity to use other than bulk characterization methods for the study of weak ferromagnetic signals of thin films grown on oxide substrates

  20. A numerical scheme to calculate temperature and salinity dependent air-water transfer velocities for any gas

    Directory of Open Access Journals (Sweden)

    M. T. Johnson

    2010-10-01

    Full Text Available The ocean-atmosphere flux of a gas can be calculated from its measured or estimated concentration gradient across the air-sea interface and the transfer velocity (a term representing the conductivity of the layers either side of the interface with respect to the gas of interest. Traditionally the transfer velocity has been estimated from empirical relationships with wind speed, and then scaled by the Schmidt number of the gas being transferred. Complex, physically based models of transfer velocity (based on more physical forcings than wind speed alone, such as the NOAA COARE algorithm, have more recently been applied to well-studied gases such as carbon dioxide and DMS (although many studies still use the simpler approach for these gases, but there is a lack of validation of such schemes for other, more poorly studied gases. The aim of this paper is to provide a flexible numerical scheme which will allow the estimation of transfer velocity for any gas as a function of wind speed, temperature and salinity, given data on the solubility and liquid molar volume of the particular gas. New and existing parameterizations (including a novel empirical parameterization of the salinity-dependence of Henry's law solubility are brought together into a scheme implemented as a modular, extensible program in the R computing environment which is available in the supplementary online material accompanying this paper; along with input files containing solubility and structural data for ~90 gases of general interest, enabling the calculation of their total transfer velocities and component parameters. Comparison of the scheme presented here with alternative schemes and methods for calculating air-sea flux parameters shows good agreement in general. It is intended that the various components of this numerical scheme should be applied only in the absence of experimental data providing robust values for parameters for a particular gas of interest.

  1. A numerical scheme to calculate temperature and salinity dependent air-water transfer velocities for any gas

    Science.gov (United States)

    Johnson, M. T.

    2010-10-01

    The ocean-atmosphere flux of a gas can be calculated from its measured or estimated concentration gradient across the air-sea interface and the transfer velocity (a term representing the conductivity of the layers either side of the interface with respect to the gas of interest). Traditionally the transfer velocity has been estimated from empirical relationships with wind speed, and then scaled by the Schmidt number of the gas being transferred. Complex, physically based models of transfer velocity (based on more physical forcings than wind speed alone), such as the NOAA COARE algorithm, have more recently been applied to well-studied gases such as carbon dioxide and DMS (although many studies still use the simpler approach for these gases), but there is a lack of validation of such schemes for other, more poorly studied gases. The aim of this paper is to provide a flexible numerical scheme which will allow the estimation of transfer velocity for any gas as a function of wind speed, temperature and salinity, given data on the solubility and liquid molar volume of the particular gas. New and existing parameterizations (including a novel empirical parameterization of the salinity-dependence of Henry's law solubility) are brought together into a scheme implemented as a modular, extensible program in the R computing environment which is available in the supplementary online material accompanying this paper; along with input files containing solubility and structural data for ~90 gases of general interest, enabling the calculation of their total transfer velocities and component parameters. Comparison of the scheme presented here with alternative schemes and methods for calculating air-sea flux parameters shows good agreement in general. It is intended that the various components of this numerical scheme should be applied only in the absence of experimental data providing robust values for parameters for a particular gas of interest.

  2. Single mode operation in a pulsed Ti:sapphire laser oscillator with a grazing-incidence four-mirror cavity

    CERN Document Server

    Ko, D K; Binks, D J; Gloster, L A W; King, T A

    1998-01-01

    We demonstrate stable single mode operation in a pulsed Ti:sapphire laser oscillator with a novel grazing-incidence four-mirror coupled cavity. This cavity consists of a grating, a gain medium, and four mirrors and, therefore, has a four-arm interferometer configuration. Through the interferometric effect, we could suppress the adjacent modes and obtain stable single mode operation with a bandwidth of < 200 MHz. We also have developed a general analysis of the laser modes and the threshold conditions for configuration and the experimental results agree well with the theoretical predictions.

  3. Faraday instability at foam-water interface.

    Science.gov (United States)

    Bronfort, A; Caps, H

    2012-12-01

    A nearly two-dimensional foam is generated inside a Hele-shaw cell and left at rest on its liquid bath. The system is then vertically shaken and, above a well-defined acceleration threshold, surface waves appear at the foam-liquid interface. Those waves are shown to be subharmonic. The acceleration threshold is studied and compared to the common liquid-gas case, emphasizing the energy dissipation inside the foam. An empirical model is proposed for this energy loss, accounting for the foam characteristics such as the bubble size but also the excitation parameter, namely the linear velocity.

  4. Structural disorder in sapphire induced by 90.3 MeV xenon ions

    International Nuclear Information System (INIS)

    Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

    2010-01-01

    In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

  5. Determination of Shear Properties in the Upper Seafloor Using Seismo-acoustic Interface Waves

    Energy Technology Data Exchange (ETDEWEB)

    Frivik, Svein Arne

    1998-12-31

    This thesis develops methods for recording and analysis of seismo-acoustic interface waves for determination of shear wave velocity as a function of depth and includes this in standard refraction seismic surveying. It investigates different techniques for estimation of dispersion characteristics of the interface waves and demonstrates that multi sensor spectral estimation techniques improve the dispersion estimates. The dispersion estimate of the fundamental interface wave mode is used as input to an object function for a model based linearized inversion. The inversion scheme provides an estimate of the shear wave velocity as a function of depth. Three field surveys were performed. Data were acquired with a standard bottom deployed refraction seismic hydrophone array containing 24 or 48 receivers, with a receiver spacing of 2.5 m. Explosive charges were used as sources. The recording time was increased from 0.5 to 8 s, compared to standard refraction seismic surveys. Shear wave velocity and shear modulus estimates were obtained from all the sites. At one of the sites, geotechnically obtained shear wave parameters were available, and a comparison between the two techniques were performed. the result of the comparison is promising and shows the potential of the technique. Although the result of applying the processing scheme to all three data sets is promising, it appears that survey parameters, like source-array spacing, receiver spacing and type of source might have been optimized for better performance. Based on this limitation, a new processing scheme and a new array configuration is proposed for surveys which integrates the recording and processing of both compressional waves and shear waves. 89 refs., 65 refs., 19 tabs.

  6. Physical modelling of interactions between interfaces and turbulence; Modelisation physique des interactions entre interfaces et turbulence

    Energy Technology Data Exchange (ETDEWEB)

    Toutant, A

    2006-12-15

    The complex interactions between interfaces and turbulence strongly impact the flow properties. Unfortunately, Direct Numerical Simulations (DNS) have to entail a number of degrees of freedom proportional to the third power of the Reynolds number to correctly describe the flow behaviour. This extremely hard constraint makes it impossible to use DNS for industrial applications. Our strategy consists in using and improving DNS method in order to develop the Interfaces and Sub-grid Scales concept. ISS is a two-phase equivalent to the single-phase Large Eddy Simulation (LES) concept. The challenge of ISS is to integrate the two-way coupling phenomenon into sub-grid models. Applying a space filter, we have exhibited correlations or sub-grid terms that require closures. We have shown that, in two-phase flows, the presence of a discontinuity leads to specific sub-grid terms. Comparing the maximum of the norm of the sub-grid terms with the maximum of the norm of the advection tensor, we have found that sub-grid terms related to interfacial forces and viscous effect are negligible. Consequently, in the momentum balance, only the sub-grid terms related to inertia have to be closed. Thanks to a priori tests performed on several DNS data, we demonstrate that the scale similarity hypothesis, reinterpreted near discontinuity, provides sub-grid models that take into account the two-way coupling phenomenon. These models correspond to the first step of our work. Indeed, in this step, interfaces are smooth and, interactions between interfaces and turbulence occur in a transition zone where each physical variable varies sharply but continuously. The next challenge has been to determine the jump conditions across the sharp equivalent interface corresponding to the sub-grid models of the transition zone. We have used the matched asymptotic expansion method to obtain the jump conditions. The first tests on the velocity of the sharp equivalent interface are very promising (author)

  7. Nanoscale formation of new solid-state compounds by topochemical effects: The interfacial reactions ZnO with Al2O3 as a model system

    International Nuclear Information System (INIS)

    Pin, Sonia; Ghigna, Paolo; Spinolo, Giorgio; Quartarone, Eliana; Mustarelli, Piercarlo; D'Acapito, Francesco; Migliori, Andrea; Calestani, Gianluca

    2009-01-01

    The chemical reactivity of thin layers (ca. 10 nm thick) of ZnO deposited onto differently oriented Al 2 O 3 single crystals has been investigated by means of atomic force microscopy inspections and X-ray absorption spectroscopy at the Zn-K edge. The (0001) ZnO -parallel (112-bar0) sapphire interface yields the ZnAl 2 O 4 spinel and a quite stable film morphology. Instead, the (112-bar0) ZnO -parallel (11-bar02) sapphire and (0001) ZnO -parallel (0001) sapphire interfaces give origin to a new compound (or, possibly, even two new compounds), whose chemical nature is most likely that of a ZnO/Al 2 O 3 phase, with still unknown composition and crystal structure. In addition, in the last two cases, films collapse into prismatic twins of ca. 1 μm in dimension. These experimental findings demonstrate that in a solid-state reaction, the topotactical relationships between the reacting solids are of crucial importance not only in determining the kinetic and mechanisms of the process in its early stages, but even the chemical nature of the product. - Graphical abstract: EXAFS Fourier transforms and morphology of different reactive interfaces between ZnO and Al 2 O 3 .

  8. Simultaneous travel time tomography for updating both velocity and reflector geometry in triangular/tetrahedral cell model

    Science.gov (United States)

    Bai, Chao-ying; He, Lei-yu; Li, Xing-wang; Sun, Jia-yu

    2018-05-01

    To conduct forward and simultaneous inversion in a complex geological model, including an irregular topography (or irregular reflector or velocity anomaly), we in this paper combined our previous multiphase arrival tracking method (referred as triangular shortest-path method, TSPM) in triangular (2D) or tetrahedral (3D) cell model and a linearized inversion solver (referred to as damped minimum norms and constrained least squares problem solved using the conjugate gradient method, DMNCLS-CG) to formulate a simultaneous travel time inversion method for updating both velocity and reflector geometry by using multiphase arrival times. In the triangular/tetrahedral cells, we deduced the partial derivative of velocity variation with respective to the depth change of reflector. The numerical simulation results show that the computational accuracy can be tuned to a high precision in forward modeling and the irregular velocity anomaly and reflector geometry can be accurately captured in the simultaneous inversion, because the triangular/tetrahedral cell can be easily used to stitch the irregular topography or subsurface interface.

  9. Determination of the frictional coefficient of the implant-antler interface: experimental approach.

    Science.gov (United States)

    Hasan, Istabrak; Keilig, Ludger; Staat, Manfred; Wahl, Gerhard; Bourauel, Christoph

    2012-10-01

    The similar bone structure of reindeer antler to human bone permits studying the osseointegration of dental implants in the jawbone. As the friction is one of the major factors that have a significant influence on the initial stability of immediately loaded dental implants, it is essential to define the frictional coefficient of the implant-antler interface. In this study, the kinetic frictional forces at the implant-antler interface were measured experimentally using an optomechanical setup and a stepping motor controller under different axial loads and sliding velocities. The corresponding mean values of the static and kinetic frictional coefficients were within the range of 0.5-0.7 and 0.3-0.5, respectively. An increase in the frictional forces with increasing applied axial loads was registered. The measurements showed an evidence of a decrease in the magnitude of the frictional coefficient with increasing sliding velocity. The results of this study provide a considerable assessment to clarify the suitable frictional coefficient to be used in the finite element contact analysis of antler specimens.

  10. In vitro Evaluation of Effect of Dental Bleaching on the Shear Bond Strength of Sapphire Orthodontics Brackets Bonded with Resin Modified Glass Ionomer Cement

    Directory of Open Access Journals (Sweden)

    Zainab M Kadhom

    2017-11-01

    Full Text Available Aim: This study aimed to assess the effect of various types of bleaching agents on the shear bond strength of sapphire brackets bonded to human maxillary premolar teeth using resin modified glass ionomer cement (RMGIC and to determine the site of bond failure. Materials and Methods: Thirty freshly extracted maxillary human premolars were selected and assigned into three equal groups, ten teeth in each. The first group was the control (unbleached group; the second group comprised teeth bleached with hydrogen peroxide group (HP 37.5% (in-office bleaching while the third group included teeth bleached with carbamide peroxide group (CP 16% (at-home bleaching. The teeth in the experimental groups were bleached and stored in water one day then bonded with sapphire brackets using RMGIC with the control group and left another day. De-bonding was performed using Instron universal testing machine. To determine the site of bond failure, both the enamel surface and bracket base of each tooth were examined under magnifying lens (20X of a stereomicroscope. Results: Results showed statistically highly significant difference in the shear bond strengths between control group and both of bleaching groups being low in the control group. Score III was the predominant site of bond failure in all groups. Conclusions: RMGIC provides adequate bond strength when bonding the sapphire brackets to bleached enamel; this bonding was strong enough to resist both the mechanical and masticatory forces. Most of the adhesive remained on the brackets, so it reduced the time required for removal of the bonding material’s remnants during enamel finishing and polishing.

  11. Experimental determination of aerosol deposition velocity on vegetation and on other sampling areas

    International Nuclear Information System (INIS)

    Jonas, R.; Vogt, K.J.

    1982-04-01

    The deposition velocity of aerosols with diameters between 0.4 and 17 μm, required for environmental exposure calculations, was experimentally determined in fifty-two field tests. The results of the deposition experiments on grass indicate that the deposition velocity is proportional to the friction velocity and depends on both the vegetation dry mass and on the aerosol diameter. The deposition velocity can be represented as an inverse polynominal function of the 3rd order as a function of the aerosol diameter. This demonstrated that the deposition velocity increases especially rapidly (by a factor of about 10) between diameters of 4 and 6 μm, for which turbulence deposition is characteristic, while the rise diminishes for larger particles, for which sedimentation is important. It can be assumed that in the normal operation of nuclear power stations and in the case of incidents in which radioactive substances are released in a filtered condition, a particle diameter of 3 μm is not exceeded and differences in friction velocity and dry mass are cancelled out in the temporal mean. At a mean friction velocity of 27 cm/s and a representative dry mass for grass of 0.017 g/cm 2 deposition velocities of 0.01, 0.02, 0.05, 0.42 and 4.6 cm/s resulted, corresponding to particle diameters of 1, 2, 3, 5 and 10 μm. This indicates that the reference value of 0.1 cm/s, given in the 'Allgemeine Berechnungsgrundlage' for the normal operation of nuclear power stations, is sufficiently conservative. The mean deposition velocity for clover was higher by a factor of approximately 2, for artificial interfaces (smooth and structured metals, filters) and soil by a factor of approximately 3 and thus 2 lower than for grass. (orig./HP)

  12. Railgun armature velocity improvement, SBIR phase 2

    Science.gov (United States)

    Thurmond, Leo E.; Bauer, David P.

    1992-08-01

    Railgun hypervelocity performance has not been repeatably demonstrated at velocities over 6 km/s. A significant performance limiting phenomena is the formation of secondary current paths in parallel with the main projectile accelerating plasma. A confined plasma armature technique was developed to prevent secondary armature formation. Confinement prevents loss of ionized material from the plasma armature and thereby prevents formation of a low rail-to-rail conductance. We controlled pressure in the confined armature via controlled venting through ports in the rails. Railgun tests with the confined armature show that sealing at the rail-confinement vessel interface is critical and difficult to achieve. Our tests show that during low seal leakage operation secondaries are prevented. However, maintaining good seal for the entire launch is very difficult.

  13. Advances in Trace Element “Fingerprinting” of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    Directory of Open Access Journals (Sweden)

    F. Lin Sutherland

    2014-12-01

    Full Text Available Mogok gem corundum samples from twelve localities were analyzed for trace element signatures (LA-ICP-MS method and oxygen isotope values (δ18O, by laser fluorination. The study augmented earlier findings on Mogok gem suites that suggested the Mogok tract forms a high vanadium gem corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents. Oxygen isotope values (δ18O for the ruby and high Si-Ca-Ga corundum (20‰–25‰ and for sapphire (10‰–20‰ indicate typical crustal values, with values >20‰ being typical of carbonate genesis. The high Si-Ca-Ga ruby has high chromium (up to 3.2 wt % Cr and gallium (up to 0. 08 wt % Ga compared to most Mogok ruby (<2 wt % Cr; <0.02 wt % Ga. In trace element ratio plots the Si-Ca-Ga-rich corundum falls into separate fields from the typical Mogok metamorphic fields. The high Ga/Mg ratios (46–521 lie well within the magmatic range (>6, and with other features suggest a potential skarn-like, carbonate-related genesis with a high degree of magmatic fluid input The overall trace element results widen the range of different signatures identified within Mogok gem corundum suites and indicate complex genesis. The expanded geochemical platform, related to a variety of metamorphic, metasomatic and magmatic sources, now provides a wider base for geographic typing of Mogok gem corundum suites. It allows more detailed comparisons with suites from other deposits and will assist identification of Mogok gem corundum sources used in jewelry.

  14. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  15. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    International Nuclear Information System (INIS)

    Pérez-Tomás, A.; Fontserè, A.; Llobet, J.; Placidi, M.; Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y.; Baron, N.

    2013-01-01

    The vertical bulk (drain-bulk) current (I db ) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I db (25–300 °C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E a ), the (soft or destructive) vertical breakdown voltage (V B ), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E a = 0.35 eV at T = 25–300 °C; V B = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E a = 2.5 eV at T > 265 °C; V B > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E a = 0.35 eV at T > 150 °C; V B = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  16. The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

    International Nuclear Information System (INIS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

    2015-01-01

    Highlights: • Concave nano-patterned sapphire substrates with SiO 2 blocking layer. • The IQE is almost two times larger than that of conventional one. • The EQE was extremely enhanced more than 100%. - Abstract: In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO 2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO 2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO 2 blocking layer proposed in this work can enhance the performance of LEDs.

  17. Developing a laser shockwave model for characterizing diffusion bonded interfaces

    International Nuclear Information System (INIS)

    Lacy, Jeffrey M.; Smith, James A.; Rabin, Barry H.

    2015-01-01

    The US National Nuclear Security Agency has a Global Threat Reduction Initiative (GTRI) with the goal of reducing the worldwide use of high-enriched uranium (HEU). A salient component of that initiative is the conversion of research reactors from HEU to low enriched uranium (LEU) fuels. An innovative fuel is being developed to replace HEU in high-power research reactors. The new LEU fuel is a monolithic fuel made from a U-Mo alloy foil encapsulated in Al-6061 cladding. In order to support the fuel qualification process, the Laser Shockwave Technique (LST) is being developed to characterize the clad-clad and fuel-clad interface strengths in fresh and irradiated fuel plates. LST is a non-contact method that uses lasers for the generation and detection of large amplitude acoustic waves to characterize interfaces in nuclear fuel plates. However, because the deposition of laser energy into the containment layer on a specimen's surface is intractably complex, the shock wave energy is inferred from the surface velocity measured on the backside of the fuel plate and the depth of the impression left on the surface by the high pressure plasma pulse created by the shock laser. To help quantify the stresses generated at the interfaces, a finite element method (FEM) model is being utilized. This paper will report on initial efforts to develop and validate the model by comparing numerical and experimental results for back surface velocities and front surface depressions in a single aluminum plate representative of the fuel cladding

  18. Developing a laser shockwave model for characterizing diffusion bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Lacy, Jeffrey M., E-mail: Jeffrey.Lacy@inl.gov; Smith, James A., E-mail: Jeffrey.Lacy@inl.gov; Rabin, Barry H., E-mail: Jeffrey.Lacy@inl.gov [Idaho National Laboratory, Idaho Falls, ID (United States)

    2015-03-31

    The US National Nuclear Security Agency has a Global Threat Reduction Initiative (GTRI) with the goal of reducing the worldwide use of high-enriched uranium (HEU). A salient component of that initiative is the conversion of research reactors from HEU to low enriched uranium (LEU) fuels. An innovative fuel is being developed to replace HEU in high-power research reactors. The new LEU fuel is a monolithic fuel made from a U-Mo alloy foil encapsulated in Al-6061 cladding. In order to support the fuel qualification process, the Laser Shockwave Technique (LST) is being developed to characterize the clad-clad and fuel-clad interface strengths in fresh and irradiated fuel plates. LST is a non-contact method that uses lasers for the generation and detection of large amplitude acoustic waves to characterize interfaces in nuclear fuel plates. However, because the deposition of laser energy into the containment layer on a specimen's surface is intractably complex, the shock wave energy is inferred from the surface velocity measured on the backside of the fuel plate and the depth of the impression left on the surface by the high pressure plasma pulse created by the shock laser. To help quantify the stresses generated at the interfaces, a finite element method (FEM) model is being utilized. This paper will report on initial efforts to develop and validate the model by comparing numerical and experimental results for back surface velocities and front surface depressions in a single aluminum plate representative of the fuel cladding.

  19. Interface evaluation for soft robotic manipulators

    Science.gov (United States)

    Moore, Kristin S.; Rodes, William M.; Csencsits, Matthew A.; Kwoka, Martha J.; Gomer, Joshua A.; Pagano, Christopher C.

    2006-05-01

    The results of two usability experiments evaluating an interface for the operation of OctArm, a biologically inspired robotic arm modeled after an octopus tentacle, are reported. Due to the many degrees-of-freedom (DOF) for the operator to control, such 'continuum' robotic limbs provide unique challenges for human operators because they do not map intuitively. Two modes have been developed to control the arm and reduce the DOF under the explicit direction of the operator. In coupled velocity (CV) mode, a joystick controls changes in arm curvature. In end-effector (EE) mode, a joystick controls the arm by moving the position of an endpoint along a straight line. In Experiment 1, participants used the two modes to grasp objects placed at different locations in a virtual reality modeling language (VRML). Objective measures of performance and subjective preferences were recorded. Results revealed lower grasp times and a subjective preference for the CV mode. Recommendations for improving the interface included providing additional feedback and implementation of an error recovery function. In Experiment 2, only the CV mode was tested with improved training of participants and several changes to the interface. The error recovery function was implemented, allowing participants to reverse through previously attained positions. The mean time to complete the trials in the second usability test was reduced by more than 4 minutes compared with the first usability test, confirming the interface changes improved performance. The results of these tests will be incorporated into future versions of the arm and improve future usability tests.

  20. An Eulerian method for computation of multimaterial impact with ENO shock-capturing and sharp interfaces

    CERN Document Server

    Udaykumar, H S; Belk, D M; Vanden, K J

    2003-01-01

    A technique is presented for the numerical simulation of high-speed multimaterial impact. Of particular interest is the interaction of solid impactors with targets. The computations are performed on a fixed Cartesian mesh by casting the equations governing material deformation in Eulerian conservation law form. The advantage of the Eulerian setting is the disconnection of the mesh from the boundary deformation allowing for large distortions of the interfaces. Eigenvalue analysis reveals that the system of equations is hyperbolic for the range of materials and impact velocities of interest. High-order accurate ENO shock-capturing schemes are used along with interface tracking techniques to evolve sharp immersed boundaries. The numerical technique is designed to tackle the following physical phenomena encountered during impact: (1) high velocities of impact leading to large deformations of the impactor as well as targets; (2) nonlinear wave-propagation and the development of shocks in the materials; (3) modelin...

  1. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  2. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

    International Nuclear Information System (INIS)

    Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    2006-01-01

    High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

  3. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

    International Nuclear Information System (INIS)

    Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

    2012-01-01

    The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. UV Detector Materials Development Program

    Science.gov (United States)

    1981-12-01

    uses the halide (AICI3) reaction with NH:j as for GaN, Dr. K. Lakin at USC grew AIN epitaxially on sapphire for surface acoustic wave devices using a...growing 11 interface was measured either by an optical pyrometer , (one color temperature) taking account of the emissivity of the surface, or by a... pyrometer . 12 Here, both sapphire and GaN were used as well as direct observations of the graphite susceptor. Description of Growth Apparatus A schematic

  5. Parasitic lasing suppression in large-aperture Ti:sapphire amplifiers by optimizing the seed–pump time delay

    International Nuclear Information System (INIS)

    Chu, Y X; Liang, X Y; Yu, L H; Xu, L; Lu, X M; Liu, Y Q; Leng, Y X; Li, R X; Xu, Z Z

    2013-01-01

    Theoretical and experimental investigations are carried out to determine the influence of the time delay between the input seed pulse and pump pulses on transverse parasitic lasing in a Ti:sapphire amplifier with a diameter of 80 mm, which is clad by a refractive index-matched liquid doped with an absorber. When the time delay is optimized, a maximum output energy of 50.8 J is achieved at a pump energy of 105 J, which corresponds to a conversion efficiency of 47.5%. Based on the existing compressor, the laser system achieves a peak power of 1.26 PW with a 29.0 fs pulse duration. (letter)

  6. 50-fs pulse generation directly from a colliding-pulse mode-locked Ti:sapphire laser using an antiresonant ring mirror

    Science.gov (United States)

    Naganuma, Kazunori; Mogi, Kazuo

    1991-05-01

    50-fs pulses were directly generated from a colliding-pulse mode-locked Ti:sapphire laser. To achieve the colliding-pulse mode locking, a miniature antiresonant ring containing an organic saturable dye jet was employed as the end mirror for the linear cavity laser. Based on measured dispersion of intracavity elements, a prism pair was implemented to control the cavity dispersion. The generated pulses have no linear chirp but do exhibit parabolic instantaneous frequency owing to third-order dispersion introduced by the prism pair.

  7. Narrow linewidth operation of the RILIS titanium: Sapphire laser at ISOLDE/CERN

    CERN Document Server

    Rothe, S; Wendt, K D A; Fedosseev, V N; Kron, T; Marsh, B A

    2013-01-01

    A narrow linewidth operating mode for the Ti:sapphire laser of the CERN ISOLDE Resonance Ionization Laser Ion Source (RILIS) has been developed. This satisfies the laser requirements for the programme of in-source resonance ionization spectroscopy measurements and improves the selectivity for isomer separation using RILIS. A linewidth reduction from typically 10 GHz down to 1 GHz was achieved by the intra-cavity insertion of a second (thick) Fabry-Perot etalon. Reliable operation during a laser scan was achieved through motorized control of the tilt angle of each etalon. A scanning, stabilization and mode cleaning procedure was developed and implemented in LabVIEW. The narrow linewidth operation was confirmed in a high resolution spectroscopy study of francium isotopes by the Collinear Resonance Ionization Spectroscopy experiment. The resulting laser scans demonstrate the suitability of the laser, in terms of linewidth, spectral purity and stability for high resolution in-source spectroscopy and isomer select...

  8. Internal structure and interfacial velocity development for bubbly two-phase flow

    International Nuclear Information System (INIS)

    Kocamustafaogullari, G.; Huang, W.D.

    1994-01-01

    This paper describes an experimental study of the internal structure of air-water flowing horizontally. The double-sensor resistivity probe technique was applied for measurements of local interfacial parameters, including void fraction, interfacial area concentration, bubble size distributions, bubble passing frequency and bubble interface velocity. Bubbly flow patterns at several flow conditions were examined at three axial locations, L/D=25, 148 and 253, in which the first measurement represents the entrance region where the flow develops, and the second and third may represent near fully developed bubbly flow patterns. The experimental results are presented in three-dimensional perspective plots of the interfacial parameters over the cross-section. These multi-dimensional presentations showed that the local values of the void fraction, interfacial area concentration and bubble passing frequency were nearly constant over the cross-section at L/D=25, with slight local peaking close to the channel wall. Although similar local peakings were observed at the second and third locations, the internal flow structure segregation due to buoyancy appeared to be very strong in the axial direction. A simple comparison of profiles of the interfacial parameters at the three locations indicated that the flow pattern development was a continuous process. Finally, it was shown that the so-called ''fully developed'' bubbly two-phase flow pattern cannot be established in a horizontal pipe and that there was no strong correspondence between void fraction and interface velocity profiles. ((orig.))

  9. Statistics of surface divergence and their relation to air-water gas transfer velocity

    Science.gov (United States)

    Asher, William E.; Liang, Hanzhuang; Zappa, Christopher J.; Loewen, Mark R.; Mukto, Moniz A.; Litchendorf, Trina M.; Jessup, Andrew T.

    2012-05-01

    Air-sea gas fluxes are generally defined in terms of the air/water concentration difference of the gas and the gas transfer velocity,kL. Because it is difficult to measure kLin the ocean, it is often parameterized using more easily measured physical properties. Surface divergence theory suggests that infrared (IR) images of the water surface, which contain information concerning the movement of water very near the air-water interface, might be used to estimatekL. Therefore, a series of experiments testing whether IR imagery could provide a convenient means for estimating the surface divergence applicable to air-sea exchange were conducted in a synthetic jet array tank embedded in a wind tunnel. Gas transfer velocities were measured as a function of wind stress and mechanically generated turbulence; laser-induced fluorescence was used to measure the concentration of carbon dioxide in the top 300 μm of the water surface; IR imagery was used to measure the spatial and temporal distribution of the aqueous skin temperature; and particle image velocimetry was used to measure turbulence at a depth of 1 cm below the air-water interface. It is shown that an estimate of the surface divergence for both wind-shear driven turbulence and mechanically generated turbulence can be derived from the surface skin temperature. The estimates derived from the IR images are compared to velocity field divergences measured by the PIV and to independent estimates of the divergence made using the laser-induced fluorescence data. Divergence is shown to scale withkLvalues measured using gaseous tracers as predicted by conceptual models for both wind-driven and mechanically generated turbulence.

  10. Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

    International Nuclear Information System (INIS)

    Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

    2006-01-01

    The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

  11. Auditory velocity discrimination in the horizontal plane at very high velocities.

    Science.gov (United States)

    Frissen, Ilja; Féron, François-Xavier; Guastavino, Catherine

    2014-10-01

    We determined velocity discrimination thresholds and Weber fractions for sounds revolving around the listener at very high velocities. Sounds used were a broadband white noise and two harmonic sounds with fundamental frequencies of 330 Hz and 1760 Hz. Experiment 1 used velocities ranging between 288°/s and 720°/s in an acoustically treated room and Experiment 2 used velocities between 288°/s and 576°/s in a highly reverberant hall. A third experiment addressed potential confounds in the first two experiments. The results show that people can reliably discriminate velocity at very high velocities and that both thresholds and Weber fractions decrease as velocity increases. These results violate Weber's law but are consistent with the empirical trend observed in the literature. While thresholds for the noise and 330 Hz harmonic stimulus were similar, those for the 1760 Hz harmonic stimulus were substantially higher. There were no reliable differences in velocity discrimination between the two acoustical environments, suggesting that auditory motion perception at high velocities is robust against the effects of reverberation. Copyright © 2014 Elsevier B.V. All rights reserved.

  12. Correlations of drift velocity for gas-liquid two-phase flow in rod bundle

    International Nuclear Information System (INIS)

    Kataoka, Isao; Matsuura, Keizo; Serizawa, Akimi

    2004-01-01

    A new correlation was developed for the drift velocity for low inlet liquid flux in rod bundle. Based on authors' previous analysis of drift velocity for large diameter pipe, an analysis was made on the drift velocity in rod bundle. It is assumed that the large bubble of which size is several subchannel diameter behaves as slug bubble. Under this assumption, it becomes very important how to define equivalent diameter for rod bundle. In view of physical consideration of slug bubble behavior and previous analysis, an equivalent diameter based on the wetted perimeter was found to be most appropriate. Using this equivalent diameter, experimental data of drift velocity in rod bundle were correlated with dimensional analysis. It was found out that for small diameter (dimensionless diameter less than 48) drift velocity increased with square root of diameter which is same dependency of ordinary slug flow correlation. For larger diameter (dimensionless diameter is more than 48), drift velocity is almost constant and same as that of dimensionless diameter of 48. The physical meaning of this result was considered to be the instability of interface of large slug bubble. The density ratio between gas and liquid and viscosity of liquid phase were found to be the main parameters which affect the drift velocity. This is physically reasonable because density ratio is related to the buoyancy force and liquid viscosity is related to shear force near solid wall. The experimental data were correlated by density ratio and dimensionless liquid viscosity. The obtained dimensionless correlation for the drift velocity in rod bundle successfully correlated experimental data for various rod bundles (equivalent diameters), pressures, liquid fluxes etc. It is also consistent with the drift flux correlation for round tube. (author)

  13. Effect of wind waves on air-sea gas exchange: proposal of an overall CO2 transfer velocity formula as a function of breaking-wave parameter

    International Nuclear Information System (INIS)

    Zhao, D.; Suzuki, Y.; Komori, S.

    2003-01-01

    A new formula for gas transfer velocity as a function of the breaking-wave parameter is proposed based on correlating gas transfer with whitecap coverage. The new formula for gas transfer across an air-sea interface depends not only on wind speed but also on wind-wave state. At the same wind speed, a higher gas transfer velocity will be obtained for a more developed wind-sea, which is represented by a smaller spectral peak frequency of wind waves. We suggest that the large uncertainties in the traditional relationship of gas transfer velocity with wind speed be ascribed to the neglect of the effect of wind waves. The breaking-wave parameter can be regarded as a Reynolds number that characterizes the intensity of turbulence associated with wind waves in the downward-bursting boundary layer (DBBL). DBBL provides an effective way to exchange gas across the air-sea interface, which might be related to the surface renewal

  14. UPDATED ANALYSIS OF THE UPWIND INTERPLANETARY HYDROGEN VELOCITY AS OBSERVED BY THE HUBBLE SPACE TELESCOPE DURING SOLAR CYCLE 23

    International Nuclear Information System (INIS)

    Vincent, Frederic E.; Ben-Jaffel, Lotfi; Harris, Walter M.

    2011-01-01

    The interplanetary hydrogen (IPH), a population of neutrals that fill the space between planets inside the heliosphere, carries the signature of the interstellar medium (ISM) and the heliospheric interface. As the incoming ISM-ionized component deflects at the heliopause, charge exchange reactions decelerate the bulk motion of the neutrals that penetrate the heliosphere. Inside the heliosphere, the IPH bulk velocity is further affected by solar gravity, radiation pressure, and ionization processes, with the latter two processes dependent on solar activity. Solar cycle 23 provided the first partial temporal map of the IPH velocity, including measurements from the Hubble Space Telescope (HST) spectrometers (Goddard High Resolution Spectrograph (GHRS) and Space Telescope Imaging Spectrograph (STIS)) and the Solar and Heliospheric Observatory/Solar Wind ANisotropies (SWAN) instrument. We present an updated analysis of IPH velocity measurements from GHRS and STIS and compare these results with those of SWAN and two different time-dependent models. Our reanalysis of STIS data reveals a significant change in IPH velocity relative to earlier reports, because of the contamination by geocoronal oxygen that was not accounted for. While current models of the heliospheric interface predict the observed IPH velocity for solar maximum, they are not consistent with data covering solar minimum. With updates to the HST data points, we now find that all data can be fit by the existing models to within 1σ, with the exception of SWAN observations taken at solar minimum (1997/1998). We conclude that the current data lack the temporal coverage and/or precision necessary to determine the detailed characteristics of the solar cycle dependence. Hence, new observations are merited.

  15. GSpecDisp: A matlab GUI package for phase-velocity dispersion measurements from ambient-noise correlations

    Science.gov (United States)

    Sadeghisorkhani, Hamzeh; Gudmundsson, Ólafur; Tryggvason, Ari

    2018-01-01

    We present a graphical user interface (GUI) package to facilitate phase-velocity dispersion measurements of surface waves in noise-correlation traces. The package, called GSpecDisp, provides an interactive environment for the measurements and presentation of the results. The selection of a dispersion curve can be done automatically or manually within the package. The data are time-domain cross-correlations in SAC format, but GSpecDisp measures phase velocity in the spectral domain. Two types of phase-velocity dispersion measurements can be carried out with GSpecDisp; (1) average velocity of a region, and (2) single-pair phase velocity. Both measurements are done by matching the real part of the cross-correlation spectrum with the appropriate Bessel function. Advantages of these two types of measurements are that no prior knowledge about surface-wave dispersion in the region is needed, and that phase velocity can be measured up to that period for which the inter-station distance corresponds to one wavelength. GSpecDisp can measure the phase velocity of Rayleigh and Love waves from all possible components of the noise correlation tensor. First, we briefly present the theory behind the methods that are used, and then describe different modules of the package. Finally, we validate the developed algorithms by applying them to synthetic and real data, and by comparison with other methods. The source code of GSpecDisp can be downloaded from: https://github.com/Hamzeh-Sadeghi/GSpecDisp

  16. A ghost fluid method for sharp interface simulations of compressible multiphase flows

    International Nuclear Information System (INIS)

    Majidi, Sahand; Afshari, Asghar

    2016-01-01

    A ghost fluid based computational tool is developed to study a wide range of compressible multiphase flows involving strong shocks and contact discontinuities while accounting for surface tension, viscous stresses and gravitational forces. The solver utilizes constrained reinitialization method to predict the interface configuration at each time step. Surface tension effect is handled via an exact interface Riemann problem solver. Interfacial viscous stresses are approximated by considering continuous velocity and viscous stress across the interface. To assess the performance of the solver several benchmark problems are considered: One-dimensional gas-water shock tube problem, shock-bubble interaction, air cavity collapse in water, underwater explosion, Rayleigh-Taylor Instability, and ellipsoidal drop oscillations. Results obtained from the numerical simulations indicate that the numerical methodology performs reasonably well in predicting flow features and exhibit a very good agreement with prior experimental and numerical observations. To further examine the accuracy of the developed ghost fluid solver, the obtained results are compared to those by a conventional diffuse interface solver. The comparison shows the capability of our ghost fluid method in reproducing the experimentally observed flow characteristics while revealing more details regarding topological changes of the interface.

  17. A ghost fluid method for sharp interface simulations of compressible multiphase flows

    Energy Technology Data Exchange (ETDEWEB)

    Majidi, Sahand; Afshari, Asghar [University of Tehran, Teheran (Iran, Islamic Republic of)

    2016-04-15

    A ghost fluid based computational tool is developed to study a wide range of compressible multiphase flows involving strong shocks and contact discontinuities while accounting for surface tension, viscous stresses and gravitational forces. The solver utilizes constrained reinitialization method to predict the interface configuration at each time step. Surface tension effect is handled via an exact interface Riemann problem solver. Interfacial viscous stresses are approximated by considering continuous velocity and viscous stress across the interface. To assess the performance of the solver several benchmark problems are considered: One-dimensional gas-water shock tube problem, shock-bubble interaction, air cavity collapse in water, underwater explosion, Rayleigh-Taylor Instability, and ellipsoidal drop oscillations. Results obtained from the numerical simulations indicate that the numerical methodology performs reasonably well in predicting flow features and exhibit a very good agreement with prior experimental and numerical observations. To further examine the accuracy of the developed ghost fluid solver, the obtained results are compared to those by a conventional diffuse interface solver. The comparison shows the capability of our ghost fluid method in reproducing the experimentally observed flow characteristics while revealing more details regarding topological changes of the interface.

  18. Numerical simulation of bubble behavior in subcooled flow boiling under velocity and temperature gradient

    International Nuclear Information System (INIS)

    Bahreini, Mohammad; Ramiar, Abas; Ranjbar, Ali Akbar

    2015-01-01

    Highlights: • Condensing bubble is numerically investigated using VOF model in OpenFOAM package. • Bubble mass reduces as it goes through condensation and achieves higher velocities. • At a certain time the slope of changing bubble diameter with time, varies suddenly. • Larger bubbles experience more lateral migration to higher velocity regions. • Bubbles migrate back to a lower velocity region for higher liquid subcooling rates. - Abstract: In this paper, numerical simulation of the bubble condensation in the subcooled boiling flow is performed. The interface between two-phase is tracked via the volume of fluid (VOF) method with continuous surface force (CSF) model, implemented in the open source OpenFOAM CFD package. In order to simulate the condensing bubble with the OpenFOAM code, the original energy equation and mass transfer model for phase change have been modified and a new solver is developed. The Newtonian flow is solved using the finite volume scheme based on the pressure implicit with splitting of operators (PISO) algorithm. Comparison of the simulation results with previous experimental data revealed that the model predicted well the behavior of the actual condensing bubble. The bubble lifetime is almost proportional to bubble initial size and is prolonged by increasing the system pressure. In addition, the initial bubble size, subcooling of liquid and velocity gradient play an important role in the bubble deformation behavior. Velocity gradient makes the bubble move to the higher velocity region and the subcooling rate makes it to move back to the lower velocity region.

  19. Numerical simulation of bubble behavior in subcooled flow boiling under velocity and temperature gradient

    Energy Technology Data Exchange (ETDEWEB)

    Bahreini, Mohammad, E-mail: m.bahreini1990@gmail.com; Ramiar, Abas, E-mail: aramiar@nit.ac.ir; Ranjbar, Ali Akbar, E-mail: ranjbar@nit.ac.ir

    2015-11-15

    Highlights: • Condensing bubble is numerically investigated using VOF model in OpenFOAM package. • Bubble mass reduces as it goes through condensation and achieves higher velocities. • At a certain time the slope of changing bubble diameter with time, varies suddenly. • Larger bubbles experience more lateral migration to higher velocity regions. • Bubbles migrate back to a lower velocity region for higher liquid subcooling rates. - Abstract: In this paper, numerical simulation of the bubble condensation in the subcooled boiling flow is performed. The interface between two-phase is tracked via the volume of fluid (VOF) method with continuous surface force (CSF) model, implemented in the open source OpenFOAM CFD package. In order to simulate the condensing bubble with the OpenFOAM code, the original energy equation and mass transfer model for phase change have been modified and a new solver is developed. The Newtonian flow is solved using the finite volume scheme based on the pressure implicit with splitting of operators (PISO) algorithm. Comparison of the simulation results with previous experimental data revealed that the model predicted well the behavior of the actual condensing bubble. The bubble lifetime is almost proportional to bubble initial size and is prolonged by increasing the system pressure. In addition, the initial bubble size, subcooling of liquid and velocity gradient play an important role in the bubble deformation behavior. Velocity gradient makes the bubble move to the higher velocity region and the subcooling rate makes it to move back to the lower velocity region.

  20. A friction test between steel and a brittle material at high contact pressures and high sliding velocities

    Directory of Open Access Journals (Sweden)

    Picart D.

    2012-08-01

    Full Text Available Our aim is to characterize the interface behaviour between an aggregate material and steel. This work focuses on contact pressures and sliding velocities reaching 100 MPa and 10 m/s. The set-up consists in a cylindrical sample of the aggregate material which slips into a steel tube. The tube is both a confinement vessel and a sliding surface. Thanks to confinement, the material can be tested under high stresses without failure. The interface pressure is generated by an axial compression. The sample is pressed on a spring, so it can be simultaneously compressed and rubbed on the tube. The set-up has been tested in the case of a quasi-static loading and the 100 MPa pressure has been reached. Then the set-up was mounted on a Split Hopkinson Pressure Bar device in order to reach higher velocities. Numerical simulations have been realized to check the feasibility and the relevance of this dynamic test. These results are analysed and compared to the experimental ones.

  1. Electromagnetic control of mass transfer at liquid/liquid interfaces; Controle electromagnetique des transferts de masse aux interfaces liquide/liquide

    Energy Technology Data Exchange (ETDEWEB)

    Saadi, B

    2006-04-15

    Most metallurgical processes, such as steel refining or nuclear waste processing; the interfaces between two liquid phases are the regions of mass transfer. These transfers require the implementation of a means of stirring to accelerate the kinetics of the pollutants transfer between both phases. This thesis deals with the use of the electromagnetic forces to stir, without any material contact, the bath core and the interface in order to control or even increase the kinetic transfers. To achieve this, two complementary experimental installations were used. The first experiment allows the measurement of the Indium transfer, initially dissolved in mercury towards a covering electrolyte layer and the velocity field in mercury. The performed experiments, determine the topology of the fields flows speeds in the mercury bath, moreover the behaviour of the transfer kinetics versus the intensity of the magnetic field are established. This evolution is correlated with the dynamic behaviour of the mercury surface. The second installation allows the characterization of an element transfer (Pb, Zr or Ce) initially contained in a fluorinated salt towards an antimony matrix containing lithium. It appears that all transfers kinetics are very fast. The proposed experimental set-up is particularly efficient for Cerium transfer (limited by the interface) but does not present any action for Zirconium transfer. (author)

  2. Comparative study of solute trapping and Gibbs free energy changes at the phase interface during alloy solidification under local nonequilibrium conditions

    Energy Technology Data Exchange (ETDEWEB)

    Sobolev, S. L., E-mail: sobolev@icp.ac.ru [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)

    2017-03-15

    An analytical model has been developed to describe the influence of solute trapping during rapid alloy solidification on the components of the Gibbs free energy change at the phase interface with emphasis on the solute drag energy. For relatively low interface velocity V < V{sub D}, where V{sub D} is the characteristic diffusion velocity, all the components, namely mixing part, local nonequilibrium part, and solute drag, significantly depend on solute diffusion and partitioning. When V ≥ V{sub D}, the local nonequilibrium effects lead to a sharp transition to diffusionless solidification. The transition is accompanied by complete solute trapping and vanishing solute drag energy, i.e. partitionless and “dragless” solidification.

  3. Superconducting RF for Low-Velocity and Intermediate-Velocity Beams

    CERN Document Server

    Grimm, Terry L

    2005-01-01

    Existing superconducting radio frequency (SRF) linacs are used to accelerate ions (protons through uranium) with velocities less than about 15% the speed of light, or electrons with velocities approximately equal to the speed of light. In the last ten years, prototype SRF cavities have completely covered the remaining range of velocities. They have demonstrated that SRF linacs will be capable of accelerating electrons from rest up to the speed of light, and ions from less than 1% up to the speed of light. When the Spallation Neutron Source is operational, SRF ion linacs will have covered the full range of velocities except for v/c ~ 0.15 to v/c ~ 0.5. A number of proposed projects (RIA, EURISOL) would span the latter range of velocities. Future SRF developments will have to address the trade-offs associated with a number of issues, including high gradient operation, longitudinal and transverse acceptance, microphonics, Lorentz detuning, operating temperature, cryogenic load, number of gaps or cells per cavity...

  4. Critical velocities in He II for independently varied superfluid and normal fluid velocities

    International Nuclear Information System (INIS)

    Baehr, M.L.

    1984-01-01

    Experiments were performed to measure the critical velocity in pure superflow and compare to the theoretical prediction; to measure the first critical velocity for independently varied superfluid and normal fluid velocities; and to investigate the propagation of the second critical velocity from the thermal counterflow line through the V/sub n/,-V/sub s/ quadrant. The experimental apparatus employed a thermal counterflow heater to adjust the normal fluid velocity, a fountain pump to vary the superfluid velocity, and a level sensing capacitor to measure the superfluid velocity. The results of the pure superfluid critical velocity measurements indicate that this velocity is temperature independent contrary to Schwarz's theory. It was found that the first critical velocity for independently varied V/sub n/ and V/sub s/ could be described by a linear function of V/sub n/ and was otherwise temperature independent. It was found that the second critical velocity could only be distinguished near the thermal counterflow line

  5. Interfacial area, velocity and void fraction in two-phase slug flow

    International Nuclear Information System (INIS)

    Kojasoy, G.; Riznic, J.R.

    1997-01-01

    The internal flow structure of air-water plug/slug flow in a 50.3 mm dia transparent pipeline has been experimentally investigated by using a four-sensor resistivity probe. Liquid and gas volumetric superficial velocities ranged from 0.55 to 2.20 m/s and 0.27 to 2.20 m/s, respectively, and area-averaged void fractions ranged from about 10 to 70%. The local distributions of void fractions, interfacial area concentration and interface velocity were measured. Contributions from small spherical bubbles and large elongated slug bubbles toward the total void fraction and interfacial area concentration were differentiated. It was observed that the small bubble void contribution to the overall void fraction was small indicating that the large slug bubble void fraction was a dominant factor in determining the total void fraction. However, the small bubble interfacial area contribution was significant in the lower and upper portions of the pipe cross sections

  6. A numerical scheme to calculate temperature and salinity dependent air-water transfer velocities for any gas

    Science.gov (United States)

    Johnson, M. T.

    2010-02-01

    The transfer velocity determines the rate of exchange of a gas across the air-water interface for a given deviation from Henry's law equilibrium between the two phases. In the thin film model of gas exchange, which is commonly used for calculating gas exchange rates from measured concentrations of trace gases in the atmosphere and ocean/freshwaters, the overall transfer is controlled by diffusion-mediated films on either side of the air-water interface. Calculating the total transfer velocity (i.e. including the influence from both molecular layers) requires the Henry's law constant and the Schmidt number of the gas in question, the latter being the ratio of the viscosity of the medium and the molecular diffusivity of the gas in the medium. All of these properties are both temperature and (on the water side) salinity dependent and extensive calculation is required to estimate these properties where not otherwise available. The aim of this work is to standardize the application of the thin film approach to flux calculation from measured and modelled data, to improve comparability, and to provide a numerical framework into which future parameter improvements can be integrated. A detailed numerical scheme is presented for the calculation of the gas and liquid phase transfer velocities (ka and kw respectively) and the total transfer velocity, K. The scheme requires only basic physical chemistry data for any gas of interest and calculates K over the full range of temperatures, salinities and wind-speeds observed in and over the ocean. Improved relationships for the wind-speed dependence of ka and for the salinity-dependence of the gas solubility (Henry's law) are derived. Comparison with alternative schemes and methods for calculating air-sea flux parameters shows good agreement in general but significant improvements under certain conditions. The scheme is provided as a downloadable program in the supplementary material, along with input files containing molecular

  7. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  8. Mean Velocity vs. Mean Propulsive Velocity vs. Peak Velocity: Which Variable Determines Bench Press Relative Load With Higher Reliability?

    Science.gov (United States)

    García-Ramos, Amador; Pestaña-Melero, Francisco L; Pérez-Castilla, Alejandro; Rojas, Francisco J; Gregory Haff, G

    2018-05-01

    García-Ramos, A, Pestaña-Melero, FL, Pérez-Castilla, A, Rojas, FJ, and Haff, GG. Mean velocity vs. mean propulsive velocity vs. peak velocity: which variable determines bench press relative load with higher reliability? J Strength Cond Res 32(5): 1273-1279, 2018-This study aimed to compare between 3 velocity variables (mean velocity [MV], mean propulsive velocity [MPV], and peak velocity [PV]): (a) the linearity of the load-velocity relationship, (b) the accuracy of general regression equations to predict relative load (%1RM), and (c) the between-session reliability of the velocity attained at each percentage of the 1-repetition maximum (%1RM). The full load-velocity relationship of 30 men was evaluated by means of linear regression models in the concentric-only and eccentric-concentric bench press throw (BPT) variants performed with a Smith machine. The 2 sessions of each BPT variant were performed within the same week separated by 48-72 hours. The main findings were as follows: (a) the MV showed the strongest linearity of the load-velocity relationship (median r = 0.989 for concentric-only BPT and 0.993 for eccentric-concentric BPT), followed by MPV (median r = 0.983 for concentric-only BPT and 0.980 for eccentric-concentric BPT), and finally PV (median r = 0.974 for concentric-only BPT and 0.969 for eccentric-concentric BPT); (b) the accuracy of the general regression equations to predict relative load (%1RM) from movement velocity was higher for MV (SEE = 3.80-4.76%1RM) than for MPV (SEE = 4.91-5.56%1RM) and PV (SEE = 5.36-5.77%1RM); and (c) the PV showed the lowest within-subjects coefficient of variation (3.50%-3.87%), followed by MV (4.05%-4.93%), and finally MPV (5.11%-6.03%). Taken together, these results suggest that the MV could be the most appropriate variable for monitoring the relative load (%1RM) in the BPT exercise performed in a Smith machine.

  9. Moveout analysis of wide-azimuth data in the presence of lateral velocity variation

    KAUST Repository

    Takanashi, Mamoru

    2012-05-01

    Moveout analysis of wide-azimuth reflection data seldom takes into account lateral velocity variations on the scale of spreadlength. However, velocity lenses (such as channels and reefs) in the overburden can cause significant, laterally varying errors in the moveout parameters and distortions in data interpretation. Here, we present an analytic expression for the normal-moveout (NMO) ellipse in stratified media with lateral velocity variation. The contribution of lateral heterogeneity (LH) is controlled by the second derivatives of the interval vertical traveltime with respect to the horizontal coordinates, along with the depth and thickness of the LH layer. This equation provides a quick estimate of the influence of velocity lenses and can be used to substantially mitigate the lens-induced distortions in the effective and interval NMO ellipses. To account for velocity lenses in nonhyperbolic moveout inversion of wide-azimuth data, we propose a prestack correction algorithm that involves computation of the lens-induced traveltime distortion for each recorded trace. The overburden is assumed to be composed of horizontal layers (one of which contains the lens), but the target interval can be laterally heterogeneous with dipping or curved interfaces. Synthetic tests for horizontally layered models confirm that our algorithm accurately removes lens-related azimuthally varying traveltime shifts and errors in the moveout parameters. The developed methods should increase the robustness of seismic processing of wide-azimuth surveys, especially those acquired for fracture-characterization purposes. © 2012 Society of Exploration Geophysicists.

  10. Moveout analysis of wide-azimuth data in the presence of lateral velocity variation

    KAUST Repository

    Takanashi, Mamoru; Tsvankin, Ilya

    2012-01-01

    Moveout analysis of wide-azimuth reflection data seldom takes into account lateral velocity variations on the scale of spreadlength. However, velocity lenses (such as channels and reefs) in the overburden can cause significant, laterally varying errors in the moveout parameters and distortions in data interpretation. Here, we present an analytic expression for the normal-moveout (NMO) ellipse in stratified media with lateral velocity variation. The contribution of lateral heterogeneity (LH) is controlled by the second derivatives of the interval vertical traveltime with respect to the horizontal coordinates, along with the depth and thickness of the LH layer. This equation provides a quick estimate of the influence of velocity lenses and can be used to substantially mitigate the lens-induced distortions in the effective and interval NMO ellipses. To account for velocity lenses in nonhyperbolic moveout inversion of wide-azimuth data, we propose a prestack correction algorithm that involves computation of the lens-induced traveltime distortion for each recorded trace. The overburden is assumed to be composed of horizontal layers (one of which contains the lens), but the target interval can be laterally heterogeneous with dipping or curved interfaces. Synthetic tests for horizontally layered models confirm that our algorithm accurately removes lens-related azimuthally varying traveltime shifts and errors in the moveout parameters. The developed methods should increase the robustness of seismic processing of wide-azimuth surveys, especially those acquired for fracture-characterization purposes. © 2012 Society of Exploration Geophysicists.

  11. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  12. Passive mode locking of a femtosecond Ti:sapphire laser with pulsed synchronous pumping by a finite train of picosecond pulses

    International Nuclear Information System (INIS)

    Borisevich, N A; Buganov, O V; Tikhomirov, S A; Tolstorozhev, G B; Shkred, G L

    1999-01-01

    An analysis is made, with the aid of the self-consistent nonlinear ABCD matrix method, of the specific features of the mechanism of passive mode locking of a femtosecond Ti:sapphire laser under conditions of pulsed synchronous pumping. The conditions of stable laser operation are studied. It is proposed to use an additional aperture as an element of negative feedback for the stabilisation of passive mode locking. Practical recommendations concerning the optimisation of a femtosecond laser are given. (control of laser radiation parameters)

  13. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

  14. Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

    Science.gov (United States)

    Wang, Rongrong; Guo, Dan; Xie, Guoxin; Pan, Guoshun

    2016-01-01

    Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanoribbons. However, very limited attention has been paid to the step formation in manufacturing process. In the present work, investigations have been conducted into this step formation mechanism on the sapphire c (0001) surface by using both experiments and simulations. The step evolutions at different stages in the polishing process were investigated with atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). The simulation of idealized steps was constructed theoretically on the basis of experimental results. It was found that (1) the subtle atomic structures (e.g., steps with different sawteeth, as well as steps with straight and zigzag edges), (2) the periodicity and (3) the degree of order of the steps were all dependent on surface composition and miscut direction (step edge direction). A comparison between experimental results and idealized step models of different surface compositions has been made. It has been found that the structure on the polished surface was in accordance with some surface compositions (the model of single-atom steps: Al steps or O steps). PMID:27444267

  15. Electron beam and optical depth profiling of quasibulk GaN

    International Nuclear Information System (INIS)

    Chernyak, L.; Osinsky, A.; Nootz, G.; Schulte, A.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Look, D. C.; Molnar, R. J.

    2000-01-01

    Electron beam and optical depth profiling of thick (5.5--64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM

  16. Simulation of High Velocity Impact on Composite Structures - Model Implementation and Validation

    Science.gov (United States)

    Schueler, Dominik; Toso-Pentecôte, Nathalie; Voggenreiter, Heinz

    2016-08-01

    High velocity impact on composite aircraft structures leads to the formation of flexural waves that can cause severe damage to the structure. Damage and failure can occur within the plies and/or in the resin rich interface layers between adjacent plies. In the present paper a modelling methodology is documented that captures intra- and inter-laminar damage and their interrelations by use of shell element layers representing sub-laminates that are connected with cohesive interface layers to simulate delamination. This approach allows the simulation of large structures while still capturing the governing damage mechanisms and their interactions. The paper describes numerical algorithms for the implementation of a Ladevèze continuum damage model for the ply and methods to derive input parameters for the cohesive zone model. By comparison with experimental results from gas gun impact tests the potential and limitations of the modelling approach are discussed.

  17. Radon gas-exchange rate through the interface sea atmosphere in the coast

    International Nuclear Information System (INIS)

    Duenas, C.; Fernandez, M.C.; Perez Martinez, M.

    1985-01-01

    The Rn gas exchange velocity through the interface sea atmosphere has been estimated. Our measurements have been made in a sampler station located in Malaga bay, obtaining a mean value of 0.45 m/d. The corresponding magnitude of the thickness of boundary layer is 316μ. Experimental results are discussed. No clear relationship can be found between the gas exchange rate and wind speed. (author)

  18. Homogenization for rigid suspensions with random velocity-dependent interfacial forces

    KAUST Repository

    Gorb, Yuliya

    2014-12-01

    We study suspensions of solid particles in a viscous incompressible fluid in the presence of random velocity-dependent interfacial forces. The flow at a small Reynolds number is modeled by the Stokes equations, coupled with the motion of rigid particles arranged in a periodic array. The objective is to perform homogenization for the given suspension and obtain an equivalent description of a homogeneous (effective) medium, the macroscopic effect of the interfacial forces and the effective viscosity are determined using the analysis on a periodicity cell. In particular, the solutions uωε to a family of problems corresponding to the size of microstructure ε and describing suspensions of rigid particles with random surface forces imposed on the interface, converge H1-weakly as ε→0 a.s. to a solution of a Stokes homogenized problem, with velocity dependent body forces. A corrector to a homogenized solution that yields a strong H1-convergence is also determined. The main technical construction is built upon the Γ-convergence theory. © 2014 Elsevier Inc.

  19. Thermal resistance of indium coated sapphire–copper contacts below 0.1K

    CERN Document Server

    Eisel, T; Koettig, T

    2014-01-01

    High thermal resistances exist at ultra-low temperatures for solid-solid interfaces. This is especially true for pressed metal-sapphire joints, where the heat is transferred by phonons only. For such pressed joints it is difficult to achieve good physical, i.e. thermal contacts due to surface irregularities in the microscopic or larger scale. Applying ductile indium as an intermediate layer reduces the thermal resistance of such contacts. This could be proven by measurements of several researchers. However, the majority of the measurements were performed at temperatures higher than 1 K. Consequently, it is difficult to predict the thermal resistance of pressed metal-sapphire joints at temperatures below 1 K. In this paper the thermal resistances across four different copper-sapphire-copper sandwiches are presented in a temperature range between 30 mK and 100 mK. The investigated sandwiches feature either rough or polished sapphire discs (empty set 20 mm x 1.5 mm) to investigate the phonon scattering at the bo...

  20. Diffraction imaging and velocity analysis using oriented velocity continuation

    KAUST Repository

    Decker, Luke

    2014-08-05

    We perform seismic diffraction imaging and velocity analysis by separating diffractions from specular reflections and decomposing them into slope components. We image slope components using extrapolation in migration velocity in time-space-slope coordinates. The extrapolation is described by a convection-type partial differential equation and implemented efficiently in the Fourier domain. Synthetic and field data experiments show that the proposed algorithm is able to detect accurate time-migration velocities by automatically measuring the flatness of events in dip-angle gathers.

  1. Studies to determine the deposition velocity of aerosols on vegetation and other sampling areas

    International Nuclear Information System (INIS)

    Jonas, R.; Vogt, K.J.

    The deposition velocity of aerosols with diameters between 0.4 and 17 μm, required for environmental exposure calculations, was experimentally determined in fifty-two field tests from 1975 to 1980. The results of the deposition experiments on grass indicate that the deposition velocity is proportional to the friction velocity and depends on both the vegetation dry mass (v/sub g/ approx. D 0 8 ) and on the aerosol diameter. The deposition velocity can be represented as an inverse polynominal function of the 3rd order as a function of the aerosol diameter. This demonstrated that the deposition velocity increases especially rapidly (by a factor of about 10) between diameters of 4 and 6 μm, for which turbulence deposition is characteristic, while the rise diminishes for larger particles, for which sedimentation is important. The deposition velocity on grass can be regarded as a characteristic value for environmental exposure calculations. It can be assumed that in the normal operation of nuclear power stations and in the case of incidents in which radioactive substances are released in a filtered condition, a particle diameter of 3 μm is not exceeded and differences in friction velocity and dry mass are cancelled out in the temporal mean. At a mean friction velocity of 27 cm/s and a representative dry mass for grass of 0.017 g/cm 2 deposition velocities of 0.01, 0.02, 0.05, 0.42 and 4.6 cm/s resulted, corresponding to particle diameters of 1, 2, 3, 5 and 10 μm. This indicates that the reference value of 0.1 cm/s, given in the Allgemeine Berechnungsgrundlage (general calculation basis) for the normal operation of nuclear power stations, is sufficiently conservative. The mean deposition velocity for clover was higher by a factor of approximately 2, for artificial interfaces (smooth and structured metals, filters) and soil by a factor of approximately 3 and thus 2 lower than for grass

  2. Defects in zinc oxide grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Francis C.C., E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Wang, Zilan; Ping Ho, Lok; Younas, M. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Su, S.C. [Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 (China); Shan, C.X. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2016-01-01

    ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4–2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

  3. Referencing geostrophic velocities using ADCP data Referencing geostrophic velocities using ADCP data

    Directory of Open Access Journals (Sweden)

    Isis Comas-Rodríguez

    2010-06-01

    Full Text Available Acoustic Doppler Current Profilers (ADCPs have proven to be a useful oceanographic tool in the study of ocean dynamics. Data from D279, a transatlantic hydrographic cruise carried out in spring 2004 along 24.5°N, were processed, and lowered ADCP (LADCP bottom track data were used to assess the choice of reference velocity for geostrophic calculations. The reference velocities from different combinations of ADCP data were compared to one another and a reference velocity was chosen based on the LADCP data. The barotropic tidal component was subtracted to provide a final reference velocity estimated by LADCP data. The results of the velocity fields are also shown. Further studies involving inverse solutions will include the reference velocity calculated here.

  4. Free-surface velocity measurements using an optically recording velocity interferometer

    International Nuclear Information System (INIS)

    Lu Jianxin; Wang Zhao; Liang Jing; Shan Yusheng; Zhou Chuangzhi; Xiang Yihuai; Lu Ze; Tang Xiuzhang

    2006-01-01

    An optically recording velocity interferometer system (ORVIS) was developed for the free-surface velocity measurements in the equation of state experiments. The time history of free-surface velocity could be recorded by the electronic streak camera. In the experiments, ORVIS got a 179 ps time resolution, and a higher time resolution could be got by minimizing the delay time. The equation of state experiments were carried out on the high power excimer laser system called 'Heaven I' with laser wavelength of 248.4 nm, pulse duration of 25 ns and maximum energy 158 J. Free-surface velocity of 20 μm thick iron got 3.86 km/s with laser intensity of 6.24 x 10 11 W·cm -2 , and free-surface velocity of 100 μm thick aluminum with 100 μm CH foil at the front got 2.87 km/s with laser intensity 7.28 x 10 11 W·cm -2 . (authors)

  5. Performance of adhesives base on PU, Epoxy and silane in the Kevlar/alumina interface; Desempenho de adesivos a base de PU, epoxi e silano na interface Kevlar/alumina

    Energy Technology Data Exchange (ETDEWEB)

    Noronha, K.F.; Melo, F.C.L.; Lopes, C.M.A. [Divisao de Materiais, Instituto de Aeronautica e Espaco (IAE), Sao Jose dos Campos, SP (Brazil); Divisao de Engenharia Mecanica-Aeronautica, Instituto Tecnologico de Aeronautica (ITA), Sao Jose dos Campos, SP (Brazil)], e-mail: cmoniz@iae.cta.br

    2010-07-01

    Hybrid ceramic/polymer composites are used for ballistic protection due to the good high-velocity impact absorption properties. The choice of the proper adhesive used to bond ceramic and polymer layers is one of the major issues for hybrid armor development due to its influence in the ballistic resistance behaviour. This work presents an adhesion study in composites of aramid textile (Kevlar) and alumina. Adhesives of different chemical nature, based on polyurethane, epoxy and silane were evaluated. T-Peel test was performed for the interface characterization and the post- failure surfaces were examined by optical microscopy. In all samples the failure occurred at the interface. The silane-based adhesive showed no interaction with the polymer, while the PU hot melt adhesive presented the highest adhesion strengths. (author)

  6. On linear relationship between shock velocity and particle velocity

    International Nuclear Information System (INIS)

    Dandache, H.

    1986-11-01

    We attempt to derive the linear relationship between shock velocity U s and particle velocity U p from thermodynamic considerations, taking into account an ideal gas equation of state and a Mie-Grueneisen equation of state for solids. 23 refs

  7. Study of mass transfer at the air-water interface by an isotopic method

    International Nuclear Information System (INIS)

    Merlivat, L.

    1975-01-01

    It is shown by analysing the hydrogen and oxygen stable isotopes distribution in liquid and water vapor, that the processes taking place on a very small scale near the liquid can be investigated. The effect of molecular mass transfer is directly obtained without having to perform difficult measurements in the air in the immediate vicinity of the water surface. Experiments are carried out in the air-water tunnel especially designed for the simulation of ocean atmosphere energy exchanges. The wind velocities vary from 0.7 to 7m/sec. The experimental results obtained do not support the classical Reynolds' analogy between momentum and mass transfer down to the interface and the theory proposed by Sheppard, but they are in agreement with Sverdrup's, Kitaigorodskiy and Volkov's and Brutsaert's theories, all of which involve a layer just above the air-water interface through which mass transfer is dominated by molecular diffusion. The thickness of this layer in the two first theories is shown to decrease with increasing wind velocity. Direct application of Brutsaert's theory for roughness Reynolds numbers smaller than one is in good agreement with the experimental data obtained [fr

  8. Determination of the filtration velocities and mean velocity in ground waters using radiotracers

    International Nuclear Information System (INIS)

    Duran P, Oscar; Diaz V, Francisco; Heresi M, Nelida

    1994-01-01

    An experimental method to determine filtration, or, Darcy velocity and mean velocity in underground waters using radiotracers, is described. After selecting the most appropriate tracers, from 6 chemical compounds, to measure water velocity, a method to measure filtration velocity was developed. By fully labelling the water column with 2 radioisotopes, Br and tritium, almost identical values were obtained for the aquifer filtration velocity in the sounding S1. This value was 0.04 m/d. Field porosity was calculated at 11% and mean velocity at 0.37 m.d. With the filtration velocity value and knowing the hydraulic variation between the soundings S1 and S2 placed at 10 meters, field permeability was estimated at 2.4 x 10 m/s. (author)

  9. Equilibrium structure of the plasma sheet boundary layer-lobe interface

    Science.gov (United States)

    Romero, H.; Ganguli, G.; Palmadesso, P.; Dusenbery, P. B.

    1990-01-01

    Observations are presented which show that plasma parameters vary on a scale length smaller than the ion gyroradius at the interface between the plasma sheet boundary layer and the lobe. The Vlasov equation is used to investigate the properties of such a boundary layer. The existence, at the interface, of a density gradient whose scale length is smaller than the ion gyroradius implies that an electrostatic potential is established in order to maintain quasi-neutrality. Strongly sheared (scale lengths smaller than the ion gyroradius) perpendicular and parallel (to the ambient magnetic field) electron flows develop whose peak velocities are on the order of the electron thermal speed and which carry a net current. The free energy of the sheared flows can give rise to a broadband spectrum of electrostatic instabilities starting near the electron plasma frequency and extending below the lower hybrid frequency.

  10. Epitactical FeAl films on sapphire and their magnetic properties; Epitaktische FeAl-Filme auf Saphir und ihre magnetischen Eigenschaften

    Energy Technology Data Exchange (ETDEWEB)

    Trautvetter, Moritz

    2011-05-05

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr{sup +} irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  11. Radial velocity asymmetries from jets with variable velocity profiles

    International Nuclear Information System (INIS)

    Cerqueira, A. H.; Vasconcelos, M. J.; Velazquez, P. F.; Raga, A. C.; De Colle, F.

    2006-01-01

    We have computed a set of 3-D numerical simulations of radiatively cooling jets including variabilities in both the ejection direction (precession) and the jet velocity (intermittence), using the Yguazu-a code. In order to investigate the effects of jet rotation on the shape of the line profiles, we also introduce an initial toroidal rotation velocity profile. Since the Yguazu-a code includes an atomic/ionic network, we are able to compute the emission coefficients for several emission lines, and we generate line profiles for the Hα, [O I]λ6300, [S II]λ6716 and [N II]λ6548 lines. Using initial parameters that are suitable for the DG Tau microjet, we show that the computed radial velocity shift for the medium-velocity component of the line profile as a function of distance from the jet axis is strikingly similar for rotating and non-rotating jet models

  12. Downstream and soaring interfaces and vortices in 2-D stratified wakes and their impact on transport of contaminants

    Directory of Open Access Journals (Sweden)

    Y. D. Chashechkin

    2006-01-01

    Full Text Available The flow of continuously stratified fluids past obstacles was studied analytically, numerically, and experimentally. The obstacles discussed here include a flat strip, aligned with the flow, inclined or transverse to the flow and a horizontal cylinder. In the flow pattern, transient and attached (lee internal waves, downstream wakes with submerged interfaces and vortices, soaring singular interfaces, soaring vortices and vortex systems are distinguished. New components of laminar flow past a horizontally towed strip are presented. Fine transverse streaky structures on the strip in the downstream wake were visualized. Soaring isolated interfaces, which are internal boundary layers forming inside the downstream attached wave field past bluff bodies were observed. With increasing of the body velocity a vortex pair was formed directly at the leading edge of this interface.

  13. Tsunami Scenario in the Nankai Trough, Japan, Based on the GPS-A and GNSS Velocities

    Science.gov (United States)

    Bock, Y.; Watanabe, S. I.; Melgar, D.; Tadokoro, K.

    2017-12-01

    We present two local tsunami scenarios for the Nankai trough, Japan, an area of significant seismic risk, using GPS-A and GNSS velocities and two different plate interface geometries to better assess the slip deficit rate. We expand on the work of Yokota et al. [2016, Nature] by: (1) Adding seafloor data collected by Nagoya University [Tadokoro et al., 2012 GRL] at the Kumano basin, (2) Aligning the geodetic data to the Nankai block (forearc sliver) to the tectonic model of Loveless and Meade [2010 JGR] - the earlier work ignored block boundaries such as the Median Tectonic Line (MTL) and may have overestimated the slip deficit rate, (3) Considering two different plate interface geometries - it is essential to use the accurate depth of the plate interface, especially for the offshore region where the faults are located near the observation sites, (4) Estimating and correcting for the postseismic displacements of the 2004 southeastern off the Kii Peninsula earthquakes (MJMA 7.1, 7.4). Based upon the refined model, we calculate the coseismic displacements and tsunami wave propagation assuming that a hundred years of constant slip deficit accumulation is released instantaneously. We used the open source software GeoClaw v5.3.1, which solves the two-dimensional shallow water equations with the finite volume technique [LeVeque, 2002 Cambridge University Press], for the local tsunami scenarios. We present the expected tsunami propagation models and wave profiles based on the geodetically-derived distribution of slip, stressing the importance of identifying fault locations and geometries. The location of the downdip edge of the coseismic rupture is essential to assess whether the coastal area would subside or not. The sensitivity to the plate interface geometries is increased in the near-trough region. From the point of view of disaster prevention, subsidence at the southern coast would heighten the tsunami runup distance (e.g., at gauges in Shimotsu and Irago). Further

  14. Transport velocity transformation - A convenient method for performance analysis of multilayer solar cell structure

    Science.gov (United States)

    Wolf, M.

    1981-01-01

    It is noted that in the case of low-level injection, space-charge quasi-neutrality, and spatially constant material parameters (including an electrostatic field), the individual layer can be treated analytically and the basic solar cell performance parameters can be evaluated from three equations. The first equation represents the transformation of the transport velocity across the layer from the other layer boundary. The second establishes the light-generated current output from the layer interface, under the influence of the transport velocities and minority-carrier density at both layer boundaries and of bulk recombination. The third equation describes the flow of these carriers across other layers. The power of the approach is considered to lie in its facility for analysis of the solar cell's performance layer by layer, giving a clear picture of the individual layer's influence on cell efficiency.

  15. Single crystalline Er{sub 2}O{sub 3}:sapphire films as potentially high-gain amplifiers at telecommunication wavelength

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, A. S.; Sadofev, S.; Schäfer, P.; Kalusniak, S.; Henneberger, F., E-mail: fh@physik.hu-berlin.de [Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin (Germany)

    2014-11-10

    Single crystalline thin films of Er{sub 2}O{sub 3}, demonstrating efficient 1.5 μm luminescence of Er{sup 3+} at room temperature were grown on Al{sub 2}O{sub 3} substrate by molecular beam epitaxy. The absorption coefficient at 1.536 μm was found to reach 270 cm{sup −1} translating in a maximal possible gain of 1390 dBcm{sup −1}. In conjunction with the 10% higher refractive index as compared to Al{sub 2}O{sub 3}, this opens the possibility to use Er{sub 2}O{sub 3}:sapphire films as short-length waveguide amplifiers in telecommunication.

  16. Propagation of the Semidiurnal Internal Tide: Phase Velocity Versus Group Velocity

    Science.gov (United States)

    Zhao, Zhongxiang

    2017-12-01

    The superposition of two waves of slightly different wavelengths has long been used to illustrate the distinction between phase velocity and group velocity. The first-mode M2 and S2 internal tides exemplify such a two-wave model in the natural ocean. The M2 and S2 tidal frequencies are 1.932 and 2 cycles per day, respectively, and their superposition forms a spring-neap cycle in the semidiurnal band. The spring-neap cycle acts like a wave, with its frequency, wave number, and phase being the differences of the M2 and S2 internal tides. The spring-neap cycle and energy of the semidiurnal internal tide propagate at the group velocity. Long-range propagation of M2 and S2 internal tides in the North Pacific is observed by satellite altimetry. Along a 3,400 km beam spanning 24°-54°N, the M2 and S2 travel times are 10.9 and 11.2 days, respectively. For comparison, it takes the spring-neap cycle 21.1 days to travel over this distance. Spatial maps of the M2 phase velocity, the S2 phase velocity, and the group velocity are determined from phase gradients of the corresponding satellite observed internal tide fields. The observed phase and group velocities agree with theoretical values estimated using the World Ocean Atlas 2013 annual-mean ocean stratification.

  17. Friction mechanisms and interfacial slip at fluid-solid interfaces

    CERN Document Server

    Leger, L

    2003-01-01

    We present series of experiments based on near field laser velocimetry, developed to characterize the friction mechanisms at fluid-solid interfaces. For polymers, entangled polymer melts are sheared against smooth solid surfaces, covered by surface attached polymer chains of the same chemical species, having a controlled surface density. Direct measurements of the interfacial velocity and of the shear force allow identification of the molecular mechanisms of friction. Depending on the value of the inverse of the shear rate experienced by the polymer compared to the reptation time, the transition between a regime of high and a regime of low friction observed when increasing the shear rate can be related to disentanglement or to the extraction of the surface chains from the bulk polymer. Surfaces with adjusted friction properties can thus be designed by choosing chain anchored length and surface density. For simple fluids, the direct measurements of the interfacial velocity show that, contrary to the usual hypo...

  18. Determination of velocity correction factors for real-time air velocity monitoring in underground mines.

    Science.gov (United States)

    Zhou, Lihong; Yuan, Liming; Thomas, Rick; Iannacchione, Anthony

    2017-12-01

    When there are installations of air velocity sensors in the mining industry for real-time airflow monitoring, a problem exists with how the monitored air velocity at a fixed location corresponds to the average air velocity, which is used to determine the volume flow rate of air in an entry with the cross-sectional area. Correction factors have been practically employed to convert a measured centerline air velocity to the average air velocity. However, studies on the recommended correction factors of the sensor-measured air velocity to the average air velocity at cross sections are still lacking. A comprehensive airflow measurement was made at the Safety Research Coal Mine, Bruceton, PA, using three measuring methods including single-point reading, moving traverse, and fixed-point traverse. The air velocity distribution at each measuring station was analyzed using an air velocity contour map generated with Surfer ® . The correction factors at each measuring station for both the centerline and the sensor location were calculated and are discussed.

  19. Uncertainty assessment of 3D instantaneous velocity model from stack velocities

    Science.gov (United States)

    Emanuele Maesano, Francesco; D'Ambrogi, Chiara

    2015-04-01

    3D modelling is a powerful tool that is experiencing increasing applications in data analysis and dissemination. At the same time the need of quantitative uncertainty evaluation is strongly requested in many aspects of the geological sciences and by the stakeholders. In many cases the starting point for 3D model building is the interpretation of seismic profiles that provide indirect information about the geology of the subsurface in the domain of time. The most problematic step in the 3D modelling construction is the conversion of the horizons and faults interpreted in time domain to the depth domain. In this step the dominant variable that could lead to significantly different results is the velocity. The knowledge of the subsurface velocities is related mainly to punctual data (sonic logs) that are often sparsely distributed in the areas covered by the seismic interpretation. The extrapolation of velocity information to wide extended horizons is thus a critical step to obtain a 3D model in depth that can be used for predictive purpose. In the EU-funded GeoMol Project, the availability of a dense network of seismic lines (confidentially provided by ENI S.p.A.) in the Central Po Plain, is paired with the presence of 136 well logs, but few of them have sonic logs and in some portion of the area the wells are very widely spaced. The depth conversion of the 3D model in time domain has been performed testing different strategies for the use and the interpolation of velocity data. The final model has been obtained using a 4 layer cake 3D instantaneous velocity model that considers both the initial velocity (v0) in every reference horizon and the gradient of velocity variation with depth (k). Using this method it is possible to consider the geological constraint given by the geometries of the horizons and the geo-statistical approach to the interpolation of velocities and gradient. Here we present an experiment based on the use of set of pseudo-wells obtained from the

  20. Kinetic Interface

    DEFF Research Database (Denmark)

    2009-01-01

    A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises.......A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises....

  1. Mathematical modeling of two phase stratified flow in a microchannel with curved interface

    Science.gov (United States)

    Dandekar, Rajat; Picardo, Jason R.; Pushpavanam, S.

    2017-11-01

    Stratified or layered two-phase flows are encountered in several applications of microchannels, such as solvent extraction. Assuming steady, unidirectional creeping flow, it is possible to solve the Stokes equations by the method of eigenfunctions, provided the interface is flat and meets the wall with a 90 degree contact angle. However, in reality the contact angle depends on the pair of liquids and the material of the channel, and differs significantly from 90 degrees in many practical cases. For unidirectional flow, this implies that the interface is a circular arc (of constant curvature). We solve this problem within the framework of eigenfunctions, using the procedure developed by Shankar. We consider two distinct cases: (a) the interface meets the wall with the equilibrium contact angle; (b) the interface is pinned by surface treatment of the walls, so that the flow rates determine the apparent contact angle. We show that the contact angle appreciably affects the velocity profile and the volume fractions of the liquids, while limiting the range of flow rates that can be sustained without the interface touching the top/bottom walls. Non-intuitively, we find that the pressure drop is reduced when the more viscous liquid wets the wall.

  2. Velocity Feedback Experiments

    Directory of Open Access Journals (Sweden)

    Chiu Choi

    2017-02-01

    Full Text Available Transient response such as ringing in a control system can be reduced or removed by velocity feedback. It is a useful control technique that should be covered in the relevant engineering laboratory courses. We developed velocity feedback experiments using two different low cost technologies, viz., operational amplifiers and microcontrollers. These experiments can be easily integrated into laboratory courses on feedback control systems or microcontroller applications. The intent of developing these experiments was to illustrate the ringing problem and to offer effective, low cost solutions for removing such problem. In this paper the pedagogical approach for these velocity feedback experiments was described. The advantages and disadvantages of the two different implementation of velocity feedback were discussed also.

  3. Efficient decoding with steady-state Kalman filter in neural interface systems.

    Science.gov (United States)

    Malik, Wasim Q; Truccolo, Wilson; Brown, Emery N; Hochberg, Leigh R

    2011-02-01

    The Kalman filter is commonly used in neural interface systems to decode neural activity and estimate the desired movement kinematics. We analyze a low-complexity Kalman filter implementation in which the filter gain is approximated by its steady-state form, computed offline before real-time decoding commences. We evaluate its performance using human motor cortical spike train data obtained from an intracortical recording array as part of an ongoing pilot clinical trial. We demonstrate that the standard Kalman filter gain converges to within 95% of the steady-state filter gain in 1.5±0.5 s (mean ±s.d.). The difference in the intended movement velocity decoded by the two filters vanishes within 5 s, with a correlation coefficient of 0.99 between the two decoded velocities over the session length. We also find that the steady-state Kalman filter reduces the computational load (algorithm execution time) for decoding the firing rates of 25±3 single units by a factor of 7.0±0.9. We expect that the gain in computational efficiency will be much higher in systems with larger neural ensembles. The steady-state filter can thus provide substantial runtime efficiency at little cost in terms of estimation accuracy. This far more efficient neural decoding approach will facilitate the practical implementation of future large-dimensional, multisignal neural interface systems.

  4. Phase transformations in Au(Fe) nano- and microparticles obtained by solid state dewetting of thin Au–Fe bilayer films

    International Nuclear Information System (INIS)

    Amram, D.; Klinger, L.; Rabkin, E.

    2013-01-01

    Sub-micrometer-sized particles of Au–Fe alloys were obtained by solid-state dewetting of single-crystalline Au–Fe bilayer films, deposited on c-plane sapphire (α-Al 2 O 3 ) substrates. Depending on the annealing parameters, precipitation of an Fe-rich phase occurred on the side facets of the particles in an interface-limited reaction. Based on the literature values of surface and interface energies in the system, the precipitates were expected to grow inside the Au(Fe) particles, resulting in an (Fe) core–(Au) shell morphology. However, more complex, time-dependent precipitate morphologies were observed, with faceted Fe-rich precipitates attached to the parent faceted Au-rich particles of the same height being dominant at the last stages of the transformation. Our high-resolution transmission electron microscopy observations revealed a nanometric segregation layer of Au on the surface of Fe-rich particles and at their interface with sapphire. This segregation layer modified the surface and interface energies of the Fe-rich particles. A thermodynamic transformation model based on the concept of weighted mean curvature was developed, describing the kinetics of precipitations and morphology evolution of the particles during the dewetting process. Employing the values of surface and interface energies modified by segregation resulted in a good qualitative agreement between theory and experiment

  5. Surface-Energy-Anisotropy-Induced Orientation Effects on RayleighInstabilities in Sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Santala, Melissa; Glaeser, Andreas M.

    2006-01-01

    Arrays of controlled-geometry, semi-infinite pore channels of systematically varied crystallographic orientation were introduced into undoped m-plane (10{bar 1}0) sapphire substrates using microfabrication techniques and ion-beam etching and subsequently internalized by solid-state diffusion bonding. A series of anneals at 1700 C caused the breakup of these channels into discrete pores via Rayleigh instabilities. In all cases, channels broke up with a characteristic wavelength larger than that expected for a material with isotropic surface energy, reflecting stabilization effects due to surface-energy anisotropy. The breakup wavelength and the time required for complete breakup varied significantly with channel orientation. For most orientations, the instability wavelength for channels of radius R was in the range of 13.2R-25R, and complete breakup occurred within 2-10 h. To first order, the anneal times for complete breakup scale with the square of the breakup wavelength. Channels oriented along a <11{bar 2}0> direction had a wavelength of {approx} 139R, and required 468 h for complete breakup. Cross-sectional analysis of channels oriented along a <11{bar 2}0> direction showed the channel to be completely bounded by stable c(0001), r{l_brace}{bar 1}012{r_brace}, and s{l_brace}10{bar 1}1{r_brace} facets.

  6. Neutron irradiation of sapphire for compressive strengthening. II. Physical properties changes

    Energy Technology Data Exchange (ETDEWEB)

    Regan, Thomas M. E-mail: thomas_regan@uml.edu; Harris, Daniel C. E-mail: harrisdc@navair.navy.mil; Blodgett, David W.; Baldwin, Kevin C.; Miragliotta, Joseph A.; Thomas, Michael E.; Linevsky, Milton J.; Giles, John W.; Kennedy, Thomas A.; Fatemi, Mohammad; Black, David R.; Lagerloef, K. Peter D

    2002-01-01

    Irradiation of sapphire with fast neutrons (0.8-10 MeV) at a fluence of 10{sup 22}/m{sup 2} increased the c-axis compressive strength and the c-plane biaxial flexure strength at 600 deg. C by a factor of {approx}2.5. Both effects are attributed to inhibition of r-plane twin propagation by damage clusters resulting from neutron impact. The a-plane biaxial flexure strength and four-point flexure strength in the c- and m-directions decreased by 10-23% at 600 deg. C after neutron irradiation. Neutron irradiation had little or no effect on thermal conductivity, infrared absorption, elastic constants, hardness, and fracture toughness. A featureless electron paramagnetic resonance signal at g=2.02 was correlated with the strength increase: This signal grew in amplitude with increasing neutron irradiation, which also increased the compressive strength. Annealing conditions that reversed the strengthening also annihilated the g=2.02 signal. A signal associated with a paramagnetic center containing two Al nuclei was not correlated with strength. Ultraviolet and visible color centers also were not correlated with strength in that they could be removed by annealing at temperatures that were too low to reverse the compressive strengthening effect of neutron irradiation.

  7. The velocity of sound

    International Nuclear Information System (INIS)

    Beyer, R.T.

    1985-01-01

    The paper reviews the work carried out on the velocity of sound in liquid alkali metals. The experimental methods to determine the velocity measurements are described. Tables are presented of reported data on the velocity of sound in lithium, sodium, potassium, rubidium and caesium. A formula is given for alkali metals, in which the sound velocity is a function of shear viscosity, atomic mass and atomic volume. (U.K.)

  8. Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

    International Nuclear Information System (INIS)

    Gang, Du; Xiao-Yan, Liu; Zhi-Liang, Xia; Jing-Feng, Yang; Ru-Qi, Han

    2010-01-01

    Interface roughness strongly influences the performance of germanium metal–organic–semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Electromagnetic control of mass transfer at liquid/liquid interfaces

    International Nuclear Information System (INIS)

    Saadi, B.

    2006-04-01

    Most metallurgical processes, such as steel refining or nuclear waste processing; the interfaces between two liquid phases are the regions of mass transfer. These transfers require the implementation of a means of stirring to accelerate the kinetics of the pollutants transfer between both phases. This thesis deals with the use of the electromagnetic forces to stir, without any material contact, the bath core and the interface in order to control or even increase the kinetic transfers. To achieve this, two complementary experimental installations were used. The first experiment allows the measurement of the Indium transfer, initially dissolved in mercury towards a covering electrolyte layer and the velocity field in mercury. The performed experiments, determine the topology of the fields flows speeds in the mercury bath, moreover the behaviour of the transfer kinetics versus the intensity of the magnetic field are established. This evolution is correlated with the dynamic behaviour of the mercury surface. The second installation allows the characterization of an element transfer (Pb, Zr or Ce) initially contained in a fluorinated salt towards an antimony matrix containing lithium. It appears that all transfers kinetics are very fast. The proposed experimental set-up is particularly efficient for Cerium transfer (limited by the interface) but does not present any action for Zirconium transfer. (author)

  10. Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

    Science.gov (United States)

    Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

    2018-05-01

    Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

  11. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    International Nuclear Information System (INIS)

    Schwinkendorf, Jan-Patrick

    2012-05-01

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  12. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Schwinkendorf, Jan-Patrick

    2012-08-15

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  13. The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Ahn, Yong Nam; Lee, Sung Hoon; Lim, Sung Keun; Woo, Kwang Je; Kim, Hyunbin

    2015-01-01

    Highlights: • Atomistic simulations of inversion domain boundary (IDB) in GaN were performed. • The existence of IDBs in GaN films leads to the reduction of the film stiffness. • A sudden reduction of IDB density induces a strong tensile stress within the films. • The density of IDB in GaN film can be controlled by adjusting GaCl/NH 3 flow ratio. • A microstructure of GaN buffer layer for minimization of stress was proposed. - Abstract: Inversion domain boundaries (IDBs) are frequently found in GaN films grown on sapphire substrates. However, the lack of atomic-level understandings about the effects of the IDBs on the properties of GaN films has hindered to utilize the IDBs for the stress release that minimizes the crack-formation in GaN films. This study performed atomistic computational analyses to fundamentally understand the roles of the IDBs in the development of the stresses in the GaN films. A sudden reduction of the IDB density induces a strong intrinsic stress in the GaN films, possibly leading to the mud-cracking of the films. A gradual decrease in the IDB density was achieved by slowly reducing the GaCl flux during the growth process of GaN buffer layer on sapphire substrates, and allowed us to experimentally demonstrate the successful fabrication of 4-in. crack-free GaN films. This approach may contribute to the fabrication of larger crack-free GaN films

  14. The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Yong Nam, E-mail: ynahn81@gmail.com; Lee, Sung Hoon, E-mail: sunghoon.lee@corning.com; Lim, Sung Keun, E-mail: sk96.lim@samsung.com; Woo, Kwang Je, E-mail: kwangje.woo@corning.com; Kim, Hyunbin, E-mail: hyunbin.kim@corning.com

    2015-03-15

    Highlights: • Atomistic simulations of inversion domain boundary (IDB) in GaN were performed. • The existence of IDBs in GaN films leads to the reduction of the film stiffness. • A sudden reduction of IDB density induces a strong tensile stress within the films. • The density of IDB in GaN film can be controlled by adjusting GaCl/NH{sub 3} flow ratio. • A microstructure of GaN buffer layer for minimization of stress was proposed. - Abstract: Inversion domain boundaries (IDBs) are frequently found in GaN films grown on sapphire substrates. However, the lack of atomic-level understandings about the effects of the IDBs on the properties of GaN films has hindered to utilize the IDBs for the stress release that minimizes the crack-formation in GaN films. This study performed atomistic computational analyses to fundamentally understand the roles of the IDBs in the development of the stresses in the GaN films. A sudden reduction of the IDB density induces a strong intrinsic stress in the GaN films, possibly leading to the mud-cracking of the films. A gradual decrease in the IDB density was achieved by slowly reducing the GaCl flux during the growth process of GaN buffer layer on sapphire substrates, and allowed us to experimentally demonstrate the successful fabrication of 4-in. crack-free GaN films. This approach may contribute to the fabrication of larger crack-free GaN films.

  15. Phase reconstruction from velocity-encoded MRI measurements – A survey of sparsity-promoting variational approaches

    KAUST Repository

    Benning, Martin

    2014-01-01

    In recent years there has been significant developments in the reconstruction of magnetic resonance velocity images from sub-sampled k-space data. While showing a strong improvement in reconstruction quality compared to classical approaches, the vast number of different methods, and the challenges in setting them up, often leaves the user with the difficult task of choosing the correct approach, or more importantly, not selecting a poor approach. In this paper, we survey variational approaches for the reconstruction of phase-encoded magnetic resonance velocity images from sub-sampled k-space data. We are particularly interested in regularisers that correctly treat both smooth and geometric features of the image. These features are common to velocity imaging, where the flow field will be smooth but interfaces between the fluid and surrounding material will be sharp, but are challenging to represent sparsely. As an example we demonstrate the variational approaches on velocity imaging of water flowing through a packed bed of solid particles. We evaluate Wavelet regularisation against Total Variation and the relatively recent second order Total Generalised Variation regularisation. We combine these regularisation schemes with a contrast enhancement approach called Bregman iteration. We verify for a variety of sampling patterns that Morozov\\'s discrepancy principle provides a good criterion for stopping the iterations. Therefore, given only the noise level, we present a robust guideline for setting up a variational reconstruction scheme for MR velocity imaging. © 2013 Elsevier Inc. All rights reserved.

  16. Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

    Science.gov (United States)

    Bidzinski, Piotr; Miczek, Marcin; Adamowicz, Boguslawa; Mizue, Chihoko; Hashizume, Tamotsu

    2011-04-01

    The influence of interface state density and bulk carrier lifetime on the dependencies of photocapacitance versus wide range of gate bias (-0.1 to -3 V) and light intensity (109 to 1020 photon cm-2 s-1) was studied for metal/insulator/n-GaN UV light photodetector by means of numerical simulations. The light detection limit and photocapacitance saturation were analyzed in terms of the interface charge and interface Fermi level for electrons and holes and effective interface recombination velocity. It was proven that the excess carrier recombination through interface states is the main reason of photocapacitance signal quenching. It was found that the photodetector can work in various modes (on-off or quantitative light measurement) adjusted by the gate bias. A comparison between experimental data and theoretical capacitance-light intensity characteristics was made. A new method for the determination of the interface state density distribution from capacitance-voltage-light intensity measurements was also proposed.

  17. Couette-Poiseuille flow experiment with zero mean advection velocity: Subcritical transition to turbulence

    Science.gov (United States)

    Klotz, L.; Lemoult, G.; Frontczak, I.; Tuckerman, L. S.; Wesfreid, J. E.

    2017-04-01

    We present an experimental setup that creates a shear flow with zero mean advection velocity achieved by counterbalancing the nonzero streamwise pressure gradient by moving boundaries, which generates plane Couette-Poiseuille flow. We obtain experimental results in the transitional regime for this flow. Using flow visualization, we characterize the subcritical transition to turbulence in Couette-Poiseuille flow and show the existence of turbulent spots generated by a permanent perturbation. Due to the zero mean advection velocity of the base profile, these turbulent structures are nearly stationary. We distinguish two regions of the turbulent spot: the active turbulent core, which is characterized by waviness of the streaks similar to traveling waves, and the surrounding region, which includes in addition the weak undisturbed streaks and oblique waves at the laminar-turbulent interface. We also study the dependence of the size of these two regions on Reynolds number. Finally, we show that the traveling waves move in the downstream (Poiseuille) direction.

  18. Optical properties tailoring by high fluence implantation of Ag ions on sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Silva, R.C. da; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Alves, E.

    2006-01-01

    Optical and structural properties of single crystalline α-Al 2 O 3 were changed by the implantation of high fluences of Ag ions. Colourless transparent (101-bar 0) sapphire samples were implanted at room temperature with 160keV silver ions and fluences up to 1x10 17 Agcm -2 . Surface amorphization is observed at the fluence of 6x10 16 Agcm -2 . Except for the lower fluences (below 6x10 16 Agcm -2 ) the optical absorption spectra reveal the presence of a band peaking in the region 450-500nm, depending on the retained fluence. This band has been attributed to the presence of silver colloids, being thus 1x10 16 Agcm -2 below the threshold for colloid formation during the implantation. Annealing in oxidizing atmosphere promotes the recrystallization along with segregation of Ag followed by loss through evaporation. Recrystallization is retarded for annealing in reducing atmosphere and the Ag profile displays now a double peak structure after evaporation. Playing with the implantation fluence, temperature and annealing atmosphere controllable shifts of the position and intensity of the optical bands in the visible were achieved

  19. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

    Directory of Open Access Journals (Sweden)

    Engin Arslan

    2014-01-01

    Full Text Available The 150 nm thick, (0001 orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm template/(0001 sapphire substrate. The indium (x concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x, lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002 and asymmetric (10–15 reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.

  20. A sapphire monolithic differential accelerometer as core sensor for gravity gradiometric geophysical instrumentation

    Directory of Open Access Journals (Sweden)

    F. Mango

    2006-06-01

    Full Text Available Gradiometric gravimetry is a survey technique widely used in geological structure investigation. This work demonstrates the feasibility of a new class of low frequency accelerometers for geodynamics studies and space applications. We present the design features of a new low noise single-axis differential accelerometer; the sensor is suitable to be used in a Gravity Gradiometer (GG system for land geophysical survey and gravity gradient measurements. A resolution of 1 Eötvös (1 Eö=10?9s?2 at one sample per second is achievable in a compact, lightweight (less than 2 kg portable instrument, operating at room temperature. The basic components of the sensor are two identical rigidly connected accelerometers separated by a 15-cm baseline vector and the useful signal is extracted as the subtraction of the two outputs, by means of an interferometric microwave readout system. The structure will be engraved in a monocrystal of sapphire by means of Computer-Numerically-Controlled (CNC ultrasonic machining: the material was chosen because of its unique mix of outstanding mechanical and dielectric properties.

  1. Nerve conduction velocity

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/article/003927.htm Nerve conduction velocity To use the sharing features on this page, please enable JavaScript. Nerve conduction velocity (NCV) is a test to see ...

  2. The Biermann battery effect at the interfaces in stratified plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Nunez, Manuel, E-mail: mnjmhd@am.uva.e [Departamento de Analisis Matematico, Universidad de Valladolid, 47005 Valladolid (Spain)

    2009-10-12

    The Biermann battery arises because an inhomogeneous electron pressure acts as a source term for the magnetic field. In order to better understand its effects, we consider a simplified model formed by the boundary between two fluids with different mean molecular weight and look for magnetic fields generated by the battery and localized in a band around the interface. We show that a parallel field is generated, which tends to push the original flow away from the boundary creating a rarefaction band. The specific forms of magnetic field and velocity are detailed.

  3. A Diffuse Interface Model for Incompressible Two-Phase Flow with Large Density Ratios

    KAUST Repository

    Xie, Yu; Wodo, Olga; Ganapathysubramanian, Baskar

    2016-01-01

    In this chapter, we explore numerical simulations of incompressible and immiscible two-phase flows. The description of the fluid–fluid interface is introduced via a diffuse interface approach. The two-phase fluid system is represented by a coupled Cahn–Hilliard Navier–Stokes set of equations. We discuss challenges and approaches to solving this coupled set of equations using a stabilized finite element formulation, especially in the case of a large density ratio between the two fluids. Specific features that enabled efficient solution of the equations include: (i) a conservative form of the convective term in the Cahn–Hilliard equation which ensures mass conservation of both fluid components; (ii) a continuous formula to compute the interfacial surface tension which results in lower requirement on the spatial resolution of the interface; and (iii) a four-step fractional scheme to decouple pressure from velocity in the Navier–Stokes equation. These are integrated with standard streamline-upwind Petrov–Galerkin stabilization to avoid spurious oscillations. We perform numerical tests to determine the minimal resolution of spatial discretization. Finally, we illustrate the accuracy of the framework using the analytical results of Prosperetti for a damped oscillating interface between two fluids with a density contrast.

  4. A Diffuse Interface Model for Incompressible Two-Phase Flow with Large Density Ratios

    KAUST Repository

    Xie, Yu

    2016-10-04

    In this chapter, we explore numerical simulations of incompressible and immiscible two-phase flows. The description of the fluid–fluid interface is introduced via a diffuse interface approach. The two-phase fluid system is represented by a coupled Cahn–Hilliard Navier–Stokes set of equations. We discuss challenges and approaches to solving this coupled set of equations using a stabilized finite element formulation, especially in the case of a large density ratio between the two fluids. Specific features that enabled efficient solution of the equations include: (i) a conservative form of the convective term in the Cahn–Hilliard equation which ensures mass conservation of both fluid components; (ii) a continuous formula to compute the interfacial surface tension which results in lower requirement on the spatial resolution of the interface; and (iii) a four-step fractional scheme to decouple pressure from velocity in the Navier–Stokes equation. These are integrated with standard streamline-upwind Petrov–Galerkin stabilization to avoid spurious oscillations. We perform numerical tests to determine the minimal resolution of spatial discretization. Finally, we illustrate the accuracy of the framework using the analytical results of Prosperetti for a damped oscillating interface between two fluids with a density contrast.

  5. Contribution of the bubbles to gas transfer across the ocean-atmosphere interface

    International Nuclear Information System (INIS)

    Memery, Laurent

    1983-05-01

    A first theoretical approach to gas transfer by bubbles is undertaken. Certain parameters which are neglected by smooth air-water interface models are studied. It is found that transfer velocity increases when solubility decreases. Further, bubble overpressure leads to water supersaturation at equilibrium, this supersaturation being more significant for less soluble gases. Although the transfer velocity remains roughly constant for a variable concentration gradient far from equilibrium, its range of variation becomes infinite near equilibrium. Because the notion of transfer velocity is not useful near equilibrium, attention is turned directly to the flux itself: the flux is a linear function of the concentration gradient. At least for tracers the coefficients of this function are entirely defined by the physico-chemical properties of the gas and by the bubble distribution. The dissertation is divided in three parts: - a synthesis which sums up the main experimental and theoretical results of the study of the influence of the bubbles created by breaking waves on gas transfer, - an article published in 'Journal of Geophysical Research', - an article submitted to 'Tellus'. (author) [fr

  6. Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

    2010-01-01

    The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Research into the effects of seawater velocity variation on migration imaging in deep-water geology

    Directory of Open Access Journals (Sweden)

    Hui Sun

    2016-07-01

    Full Text Available This paper aims at the problem that in deep water the migration quality is poor, and starts with the influence that velocity model accuracy has on migration, studying influence that variable seawater velocity makes on migration effect. At first, variable seawater velocity influenced by temperature, pressure and salinity is defined to replace the true seawater velocity. Then variable seawater velocity’s influence on interface migration location, layer sickness and migration energy focusing degree are analyzed in theory. And finally a deep water layered medium model containing variable seawater velocity, a syncline wedge shape model and a complex seafloor velocity model are constructed. By changing the seawater velocity of each model and comparing migration results of constant seawater-velocity model and variable seawater-velocity model, we can draw the conclusion: Under the condition of deep water, variable seawater-velocity’s impact on the quality of seismic migration is significant, which not only can change the location of geologic body migration result, but also can influence the resolution of geologic interface in the migration section and maybe can cause migration illusion.   Investigación de los efectos de la variación en la velocidad del agua marina sobre las imágenes de migración en la geología de aguas profundas Resumen Este artículo se enfoca en el problema de la baja calidad de la migración en aguas profundas. Se analiza la influencia que tiene el modelo de precisión de velocidad en la migración y se estudia el impacto que la variación de velocidad del agua marina tiene en el efecto de movimiento. En primera instancia, se define la variación de la velocidad del agua marina afectada por la temperatura, la presión y la salinidad para reemplazar la velocidad del agua marina actual. Luego se analiza la teoría de la influencia de la velocidad del agua marina sobre la interfaz de la ubicación de migración, el grosor de

  8. Determination of velocity correction factors for real-time air velocity monitoring in underground mines

    OpenAIRE

    Zhou, Lihong; Yuan, Liming; Thomas, Rick; Iannacchione, Anthony

    2017-01-01

    When there are installations of air velocity sensors in the mining industry for real-time airflow monitoring, a problem exists with how the monitored air velocity at a fixed location corresponds to the average air velocity, which is used to determine the volume flow rate of air in an entry with the cross-sectional area. Correction factors have been practically employed to convert a measured centerline air velocity to the average air velocity. However, studies on the recommended correction fac...

  9. Imaging megathrust zone and Yakutat/Pacific plate interface in Alaska subduction zone

    Science.gov (United States)

    Kim, Y.; Abers, G. A.; Li, J.; Christensen, D. H.; Calkins, J. A.

    2013-05-01

    We image the subducted slab underneath a 450 km long transect of the Alaska subduction zone. Dense stations in southern Alaska are set up to investigate (1) the geometry and velocity structure of the downgoing plate and their relation to slab seismicity, and (2) the interplate coupled zone where the great 1964 (magnitude 9.3) had greatest rupture. The joint teleseismic migration of two array datasets (MOOS, Multidisciplinary Observations of Onshore Subduction, and BEAAR, Broadband Experiment Across the Alaska Range) based on teleseismic receiver functions (RFs) using the MOOS data reveal a shallow-dipping prominent low-velocity layer at ~25-30 km depth in southern Alaska. Modeling of these RF amplitudes shows a thin (<6.5 km) low-velocity layer (shear wave velocity of ~3 km/s), which is ~20-30% slower than normal oceanic crustal velocities, between the subducted slab and the overriding North American plate. The observed low-velocity megathrust layer (with P-to-S velocity ratio (Vp/Vs) exceeding 2.0) may be due to a thick sediment input from the trench in combination of elevated pore fluid pressure in the channel. The subducted crust below the low-velocity channel has gabbroic velocities with a thickness of 11-12 km. Both velocities and thickness of the low-velocity channel abruptly increase as the slab bends in central Alaska, which agrees with previously published RF results. Our image also includes an unusually thick low-velocity crust subducting with a ~20 degree dip down to 130 km depth at approximately 200 km inland beneath central Alaska. The unusual nature of this subducted segment has been suggested to be due to the subduction of the Yakutat terrane. We also show a clear image of the Yakutat and Pacific plate subduction beneath the Kenai Peninsula, and the along-strike boundary between them at megathrust depths. Our imaged western edge of the Yakutat terrane, at 25-30 km depth in the central Kenai along the megathrust, aligns with the western end of the

  10. Prediction of the Inlet Nozzle Velocity Profiles for the CANDU-6 Moderator Analysis

    International Nuclear Information System (INIS)

    Yoon, Churl; Park, Joo Hwan

    2006-01-01

    For the moderator analysis of the CANDU reactors in Korea, predicting local moderator subcooling in the Calandria vessels is one of the main concerns for the estimation of heat sink capability of moderator under LOCA transients. The moderator circulation pattern is determined by the combined forces of the inlet jet momentum and the buoyancy flow. Even though the inlet boundary condition plays an important role in determining the moderator circulations, no measured data of detailed inlet velocity profiles is available. The purpose of this study is to produce the velocity profiles at the inlet nozzles by a CFD simulation. To produce the velocity vector fields at the inlet nozzle surfaces, the internal flows in the nozzle assembly were simulated by using a commercial CFD code, CFX-5.7. In the reference, the analytical capability of CFX-5.7 had been estimated by a validation of the CFD code against available experimental data for separate flow phenomena. Various turbulence models and grid spacing had been also tested. In the following section, the interface treatment between the computational domains would be explained. In section 3, the inlet nozzle flow through the CANDU moderator nozzle assembly was predicted by using the obtained technology of the CFD simulation

  11. Kinetic energy budgets near the turbulent/nonturbulent interface in jets

    Science.gov (United States)

    Taveira, Rodrigo R.; da Silva, Carlos B.

    2013-01-01

    The dynamics of the kinetic energy near the turbulent/nonturbulent (T/NT) interface separating the turbulent from the irrotational flow regions is analysed using three direct numerical simulations of turbulent planar jets, with Reynolds numbers based on the Taylor micro-scale across the jet shear layer in the range Reλ ≈ 120-160. Important levels of kinetic energy are already present in the irrotational region near the T/NT interface. The mean pressure and kinetic energy are well described by the Bernoulli equation in this region and agree with recent results obtained from rapid distortion theory in the turbulent region [M. A. C. Teixeira and C. B. da Silva, "Turbulence dynamics near a turbulent/non-turbulent interface," J. Fluid Mech. 695, 257-287 (2012)], 10.1017/jfm.2012.17 while the normal Reynolds stresses agree with the theoretical predictions from Phillips ["The irrotational motion outside a free turbulent boundary," Proc. Cambridge Philos. Soc. 51, 220 (1955)], 10.1017/S0305004100030073. The use of conditional statistics in relation to the distance from the T/NT interface allow a detailed study of the build up of kinetic energy across the T/NT interface, pointing to a very different picture than using classical statistics. Conditional kinetic energy budgets show that apart from the viscous dissipation of kinetic energy, the maximum of all the mechanisms governing the kinetic energy are concentrated in a very narrow region distancing about one to two Taylor micro-scales from the T/NT interface. The (total and fluctuating) kinetic energy starts increasing in the irrotational region by pressure-velocity interactions - a mechanism that can act at distance, and continue to grow by advection (for the total kinetic energy) and turbulent diffusion (for the turbulent kinetic energy) inside the turbulent region. These mechanisms tend to occur preferentially around the core of the large-scale vortices existing near T/NT interface. The production of turbulent

  12. Collective cell migration without proliferation: density determines cell velocity and wave velocity

    Science.gov (United States)

    Tlili, Sham; Gauquelin, Estelle; Li, Brigitte; Cardoso, Olivier; Ladoux, Benoît; Delanoë-Ayari, Hélène; Graner, François

    2018-05-01

    Collective cell migration contributes to embryogenesis, wound healing and tumour metastasis. Cell monolayer migration experiments help in understanding what determines the movement of cells far from the leading edge. Inhibiting cell proliferation limits cell density increase and prevents jamming; we observe long-duration migration and quantify space-time characteristics of the velocity profile over large length scales and time scales. Velocity waves propagate backwards and their frequency depends only on cell density at the moving front. Both cell average velocity and wave velocity increase linearly with the cell effective radius regardless of the distance to the front. Inhibiting lamellipodia decreases cell velocity while waves either disappear or have a lower frequency. Our model combines conservation laws, monolayer mechanical properties and a phenomenological coupling between strain and polarity: advancing cells pull on their followers, which then become polarized. With reasonable values of parameters, this model agrees with several of our experimental observations. Together, our experiments and model disantangle the respective contributions of active velocity and of proliferation in monolayer migration, explain how cells maintain their polarity far from the moving front, and highlight the importance of strain-polarity coupling and density in long-range information propagation.

  13. Rebound mechanics of micrometre-scale, spherical particles in high-velocity impacts.

    Science.gov (United States)

    Yildirim, Baran; Yang, Hankang; Gouldstone, Andrew; Müftü, Sinan

    2017-08-01

    The impact mechanics of micrometre-scale metal particles with flat metal surfaces is investigated for high-velocity impacts ranging from 50 m s -1 to more than 1 km s -1 , where impact causes predominantly plastic deformation. A material model that includes high strain rate and temperature effects on the yield stress, heat generation due to plasticity, material damage due to excessive plastic strain and heat transfer is used in the numerical analysis. The coefficient of restitution e is predicted by the classical work using elastic-plastic deformation analysis with quasi-static impact mechanics to be proportional to [Formula: see text] and [Formula: see text] for the low and moderate impact velocities that span the ranges of 0-10 and 10-100 m s -1 , respectively. In the elastic-plastic and fully plastic deformation regimes the particle rebound is attributed to the elastic spring-back that initiates at the particle-substrate interface. At higher impact velocities (0.1-1 km s -1 ) e is shown to be proportional to approximately [Formula: see text]. In this deeply plastic deformation regime various deformation modes that depend on plastic flow of the material including the time lag between the rebound instances of the top and bottom points of particle and the lateral spreading of the particle are identified. In this deformation regime, the elastic spring-back initiates subsurface, in the substrate.

  14. Shock interaction with a two-gas interface in a novel dual-driver shock tube

    Science.gov (United States)

    Labenski, John R.

    Fluid instabilities exist at the interface between two fluids having different densities if the flow velocity and density gradient are anti-parallel or if a shock wave crosses the boundary. The former case is called the Rayleigh-Taylor (R-T) instability and the latter, the Richtmyer-Meshkov (R-M) instability. Small initial perturbations on the interface destabilize and grow into larger amplitude structures leading to turbulent mixing. Instabilities of this type are seen in inertial confinement fusion (ICF) experiments, laser produced plasmas, supernova explosions, and detonations. A novel dual-driver shock tube was used to investigate the growth rate of the R-M instability. One driver is used to create an argon-refrigerant interface, and the other at the opposite end of the driven section generates a shock to force the interface with compressible flows behind the shock. The refrigerant gas in the first driver is seeded with sub-micron oil droplets for visualization of the interface. The interface travels down the driven section past the test section for a fixed amount of time. A stronger shock of Mach 1.1 to 1.3 drives the interface back past the test section where flow diagnostics are positioned. Two schlieren systems record the density fluctuations while light scattering detectors record the density of the refrigerant as a function of position over the interface. A pair of digital cameras take stereo images of the interface, as mapped out by the tracer particles under illumination by a Q-switched ruby laser. The amount of time that the interface is allowed to travel up the driven section determines the interaction time as a control. Comparisons made between the schlieren signals, light scattering detector outputs, and the images quantify the fingered characteristics of the interface and its growth due to shock forcing. The results show that the interface has a distribution of thickness and that the interaction with a shock further broadens the interface. The

  15. Consideration of some difficulties in migration velocity analysis; Migration velocity analysis no shomondai ni kansuru kento

    Energy Technology Data Exchange (ETDEWEB)

    Akama, K [Japan National Oil Corp., Tokyo (Japan). Technology Research Center; Matsuoka, T [Japan Petroleum Exploration Corp., Tokyo (Japan)

    1997-10-22

    Concerning migration velocity analysis in the seismic exploration method, two typical techniques, out of velocity analysis techniques using residual moveout in the CIP gather, are verified. Deregowski`s method uses pre-stacking deep-level migration records for velocity analysis to obtain velocities free of spatial inconsistency and not dependent on the velocity structure. This method is very like the conventional DMO velocity analysis method and is easy to understand intuitively. In this method, however, error is apt to be aggravated in the process of obtaining the depth-sector velocity from the time-RMS velocity. Al-Yahya`s method formulates the moveout residual in the CIP gather. This assumes horizontal stratification and a small residual velocity, however, and fails to guarantee convergence in the case of a steep structure or a grave model error. In the updating of the velocity model, in addition, it has to maintain required accuracy and, at the same time, incorporate smoothing to ensure not to deteriorate high convergence. 2 refs., 5 figs.

  16. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

    International Nuclear Information System (INIS)

    Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

    2008-01-01

    High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

  17. Capillary-wave dynamics and interface structure modulation in binary Bose-Einstein condensate mixtures

    Science.gov (United States)

    Indekeu, Joseph O.; Van Thu, Nguyen; Lin, Chang-You; Phat, Tran Huu

    2018-04-01

    The localized low-energy interfacial excitations, or interfacial Nambu-Goldstone modes, of phase-segregated binary mixtures of Bose-Einstein condensates are investigated analytically. To this end a double-parabola approximation (DPA) is performed on the Lagrangian density in Gross-Pitaevskii theory for a system in a uniform potential. This DPA entails a model in which analytic expressions are obtained for the excitations underlying capillary waves or ripplons for arbitrary strength K (>1 ) of the phase segregation. The dispersion relation ω (k ) ∝k3 /2 is derived directly from the Bogoliubov-de Gennes equations in the limit that the wavelength 2 π /k is much larger than the interface width. The proportionality constant in the dispersion relation provides the static interfacial tension. A correction term in ω (k ) of order k5 /2 is calculated analytically within the DPA model. The combined result is tested against numerical diagonalization of the exact Bogoliubov-de Gennes equations. Satisfactory agreement is obtained in the range of physically relevant wavelengths. The ripplon dispersion relation is relevant to state-of-the-art experiments using (quasi)uniform optical-box traps. Furthermore, within the DPA model explicit expressions are obtained for the structural deformation of the interface due to the passing of the capillary wave. It is found that the amplitude of the wave is enhanced by an amount that is quadratic in the ratio of the phase velocity ω /k to the sound velocity c . For generic mixtures consisting of condensates with unequal healing lengths, an additional modulation is predicted of the common value of the condensate densities at the interface.

  18. Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Nam, Giwoong; Kim, Soaram [Department of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Kim, Do Yeob [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Lee, Dong-Yul [LED R and D team, Samsung Electronics Co. Ltd., Yongin 446-711 (Korea, Republic of); Kim, Jin Soo [Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju, Chonbuk 561-756 (Korea, Republic of); Kim, Sung-O [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Kim, Jong Su [Department of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749 (Korea, Republic of); Son, Jeong-Sik [Department of Visual Optics, Kyungwoon University, Gumi, Gyeongsangbuk-do 730-850 (Korea, Republic of); Leem, Jae-Young, E-mail: jyleem@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of)

    2012-10-15

    Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol-gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were {alpha}=4 Multiplication-Sign 10{sup -3} eV/K and {beta}=4.9 Multiplication-Sign 10{sup 3} K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission. - Highlights: Black-Right-Pointing-Pointer ZnO thin films on R-plane sapphire substrates were grown by sol-gel method. Black-Right-Pointing-Pointer Two emission peaks at 3.338 and 3.279 eV were observed at 300 K Black-Right-Pointing-Pointer Activation energies of the two peaks were 39.3 and 28.9 meV,respectively. Black-Right-Pointing-Pointer Exciton radiative lifetime of the two peaks increased with increasing temperature.

  19. Velocity Segregation and Systematic Biases In Velocity Dispersion Estimates with the SPT-GMOS Spectroscopic Survey

    Science.gov (United States)

    Bayliss, Matthew. B.; Zengo, Kyle; Ruel, Jonathan; Benson, Bradford A.; Bleem, Lindsey E.; Bocquet, Sebastian; Bulbul, Esra; Brodwin, Mark; Capasso, Raffaella; Chiu, I.-non; McDonald, Michael; Rapetti, David; Saro, Alex; Stalder, Brian; Stark, Antony A.; Strazzullo, Veronica; Stubbs, Christopher W.; Zenteno, Alfredo

    2017-03-01

    The velocity distribution of galaxies in clusters is not universal; rather, galaxies are segregated according to their spectral type and relative luminosity. We examine the velocity distributions of different populations of galaxies within 89 Sunyaev Zel’dovich (SZ) selected galaxy clusters spanning 0.28GMOS spectroscopic survey, supplemented by additional published spectroscopy, resulting in a final spectroscopic sample of 4148 galaxy spectra—2868 cluster members. The velocity dispersion of star-forming cluster galaxies is 17 ± 4% greater than that of passive cluster galaxies, and the velocity dispersion of bright (m< {m}* -0.5) cluster galaxies is 11 ± 4% lower than the velocity dispersion of our total member population. We find good agreement with simulations regarding the shape of the relationship between the measured velocity dispersion and the fraction of passive versus star-forming galaxies used to measure it, but we find a small offset between this relationship as measured in data and simulations, which suggests that our dispersions are systematically low by as much as 3% relative to simulations. We argue that this offset could be interpreted as a measurement of the effective velocity bias that describes the ratio of our observed velocity dispersions and the intrinsic velocity dispersion of dark matter particles in a published simulation result. Measuring velocity bias in this way suggests that large spectroscopic surveys can improve dispersion-based mass-observable scaling relations for cosmology even in the face of velocity biases, by quantifying and ultimately calibrating them out.

  20. Local velocity measurements in lead-bismuth and sodium flows using the ultrasound doppler velocimetry

    International Nuclear Information System (INIS)

    Eckert, S.; Gerbeth, G.

    2003-01-01

    We will present measurements of the velocity profiles in liquid sodium and eutectic lead-bismuth by means of the Ultrasonic Doppler Velocimetry (UDV). A sodium flow in a rectangular duct exposed to an external, transverse magnetic field has been examined. To demonstrate the capability of UDV the transformation of the well-known turbulent, piston-like profile to an M-shaped velocity profile for growing magnetic field strength was observed. The significance of artifacts such as caused by the existence of reflecting interfaces in the measuring domain will be discussed. In the sodium case, the measurements were performed through the channel wall. An integrated ultrasonic sensor with acoustic wave-guide has been developed to overcome the limitation of ultrasonic transducers to temperatures lower than 200 .deg. C. This sensor can presently be applied at maximum temperatures up to 800 .deg. C. Stable and robust measurements have been performed in various PbBi flows in our laboratory at FZR as well as at the THESYS loop of the KALLA laboratory of the ForschungsZentrum Karlsruhe (FZK). We will also present experimental results obtained in a PbBi bubbly flow at 250...300 .deg. C. Argon bubbles were injected through a single orifice in a cylindrical container filled with stagnant PbBi. Velocity profiles were measured in the bubble plume. Mean values of the liquid as well as the bubble velocity were extracted from the data and will be presented as function of the gas flow rate