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Sample records for sapphire characteristics resulted

  1. Pulse formation and characteristics of the cw mode-locked titanium-doped sapphire laser

    Science.gov (United States)

    Zschocke, Wolfgang; Stamm, Uwe; Heumann, Ernst; Ledig, Mario; Guenzel, Uwe; Kvapil, Jiri; Koselja, Michael P.; Kubelka, Jiri

    1991-10-01

    We report on measurements of transient and steady-state pulse characteristics of an acousto- optically mode-locked titanium-doped sapphire laser. During the pulse evolution, oscillations in the pulse width and pulse energy are found. A steady state is reached after about 40 to 60 microsecond(s) . The steady-state pulse width is strongly influenced by the mode-locking loss as well as the intracavity bandwidth. Shortest pulses of typically 15 ps are obtained. The experiment is compared with results of a simple computer simulation.

  2. Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

    1991-06-29

    Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

  3. Characteristics and kinetics of laser-pumped Ti:Sapphire oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Eggleston, J.M.; De Shazer, L.G.; Kangas, K.W.

    1988-06-01

    The experimental performance of a gain-switched Ti:Sapphire laser oscillator pumped by a frequency-doubled Q-switched Nd:YAG laser system is presented for a variety of operating conditions. A theoretical model developed for this oscillator predicts well its performance. In particular, the observed curved input-output energy plots for the oscillator result from the kinetics of gain switching and fluorescence decay during the gain buildup period. Fluorescence decay also produces observed oscillator thresholds higher than those normally predicted by the standard gain-equals-loss condition. Gain-switched parasitic modes, with a higher threshold but shorter roundtrip time than the resonator mode, cause the resonator mode to oscillate only over a finite range of pump energies. Also, spectroscopic investigations show that the Ti:Sapphire cross-section spectrum is well fit by a Poisson distribution, giving a peak cross section of 3 x 10/sup -19/ cm/sup 2/ for the ..pi.. polarization.

  4. Cryogenic Sapphire Oscillator using a low-vibration design pulse-tube cryocooler: First results

    CERN Document Server

    Hartnett, John G; Wang, Chao; Floch, Jean-Michel Le

    2010-01-01

    A Cryogenic Sapphire Oscillator has been implemented at 11.2 GHz using a low-vibration design pulse-tube cryocooler. Compared with a state-of-the-art liquid helium cooled CSO in the same laboratory, the square root Allan variance of their combined fractional frequency instability is $\\sigma_y = 1.4 \\times 10^{-15}\\tau^{-1/2}$ for integration times $1 < \\tau < 10$ s, dominated by white frequency noise. The minimum $\\sigma_y = 5.3 \\times 10^{-16}$ for the two oscillators was reached at $\\tau = 20$ s. Assuming equal contributions from both CSOs, the single oscillator phase noise $S_{\\phi} \\approx -96 \\; dB \\; rad^2/Hz$ at 1 Hz offset from the carrier.

  5. Cryogenic sapphire oscillator using a low-vibration design pulse-tube cryocooler: first results.

    Science.gov (United States)

    Hartnett, John; Nand, Nitin; Wang, Chao; Floch, Jean-Michel

    2010-05-01

    A cryogenic sapphire oscillator (CSO) has been implemented at 11.2 GHz using a low-vibration design pulsetube cryocooler. Compared with a state-of-the-art liquid helium cooled CSO in the same laboratory, the square root Allan variance of their combined fractional frequency instability is sigma(y) = 1.4 x 10(-15)tau(-1/2) for integration times 1 < tau < 10 s, dominated by white frequency noise. The minimum sigmay = 5.3 x 10(-16) for the two oscillators was reached at tau = 20 s. Assuming equal contributions from both CSOs, the single oscillator phase noise S(phi) approximately -96 dB x rad(2)/Hz at 1 Hz set from the carrier.

  6. Thermal Conductance through Sapphire-Sapphire Bonding

    Science.gov (United States)

    Suzuki, T.; Tomaru, T.; Haruyama, T.; Shintomi, T.; Uchinyama, T.; Miyoki, S.; Ohashi, M.; Kuroda, K.

    2003-07-01

    Thermal conductance on sapphire-sapphire bonded interface has been investigated. Two pieces of single crystal sapphire bar with square cross section were bonded together by adhesion free bonding. In two sections of the bar, thermal conductivity was measured between 5 K to 300K. One section contains a bonded interface and the other section measured a thermal conductivity of the sapphire as a reference. No significant thermal resistance due to bonded interface was found from this measurement. Obtained thermal conductivity reaches κ 1 × 104 [W/m·K] in temperature range of T = 20 ˜ 30 K which is a planned operating temperature of a cryogenic mirror of the Large scale Cryogenic Gravitational wave telescope. It looks promising for sapphire bonding technique to improve a heat transfer from a large cryogenic mirror to susp ension wires.

  7. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Son, Ji-Su, E-mail: sonjisu@gmail.com [Department of Electrical Engineering and Computer Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Akasaki Research Center, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Akasaki Research Center, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Baik, Kwang Hyeon [Department of Materials Science and Engineering, Hongik University, Jochiwon, Chungnam 339-701 (Korea, Republic of); Seo, Yong Gon; Hwang, Sung-Min [Optoelectronics Laboratory, Korea Electronics Technology Institute, Gyeonggi-do 463-816 (Korea, Republic of)

    2013-11-01

    We report on the characteristics of a-plane GaN films directly grown on optimized silicon-dioxide-patterned r-plane sapphire substrates. Various shapes and sizes of silicon dioxide patterns were considered with the aim of achieving fully coalescent a-plane GaN films with a smooth surface and high crystalline quality. The omega full widths at half maximum of the (11–20) X-ray rocking curve values of optimized a-plane GaN films with regular hexagonal patterns of 1 μm window width and 6 μm mask width were measured to be 597 arc sec along the c-axis direction and 457 arc sec along the m-axis direction. Atomic force microscopy images revealed a significant reduction in the density of submicron pits in the mask region. Plan-view and cross-sectional transmission electron microscopy images showed that basal stacking faults and threading dislocation densities were reduced from ∼ 5.7 × 10{sup 5} cm{sup −1} and ∼ 1 × 10{sup 9} cm{sup −2} in the window region to ∼ 1.8 × 10{sup 5} cm{sup −1} and ∼ 2.1 × 10{sup 8} cm{sup −2} in the mask region, respectively. - Highlights: • Optimal hexagonal patterns (OHP) with 1 μm window width and 6 μm mask width. • Fully coalescent α-plane GaN with smooth surface and high crystalline quality. • Decreased anisotropy and defect density in α-plane GaN with SiO{sub 2} OHP.

  8. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  9. Sapphire Multiple Filament and Large Plate Growth Processes

    Science.gov (United States)

    1972-10-01

    for sapphire filaments is scrap white verneuil -grown sapphire boules. These boules are processed here at Tyco to achieve the proper mesh size...entrapped liquid freeze, they shrink, resulting in voids. Raw material for our growth process is provided by use of scap verneuil sapphire boules. In...J ;~ ;t" ,, ,, .. ::~ ,:~~\\i : i .<’\\ :1 ’ r .,l,, .. ’ ... :,J_ ’ ’~~ .. ;~ 1-.. i d;·, AFML-TR -7---190 1;).-- SAPPHIRE MULTIPLE

  10. Appearance of large crystalline domains in VO{sub 2} films grown on sapphire (001) and their phase transition characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Azhan, Nurul Hanis; Su, Kui; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont 37200 Tours (France)

    2015-06-28

    We report the first observation of large crystalline domains of several μm-size in VO{sub 2} films deposited on Al{sub 2}O{sub 3} (001) substrates by rf-biased reactive sputtering technique. The large crystalline domains, dominated with random in-plane oriented growth of (011){sub M1}-orientation, appear only under adequate substrate biasing, such as 10 W, while most biasing conditions result in conventional nanosized grains of highly oriented (010){sub M1}-orientation. Two temperature-controlled analyses, x-ray diffraction and micro-Raman spectroscopy, have revealed that some parts of large crystalline domains undergo intermediate monoclinic (M2) phase during the thermally-induced structural phase transition from monoclinic (M1) to rutile-tetragonal (R) phase. As an effect of the appearance of large crystalline domains, the film showed in-plane tensile stress, resulting in high T{sub IMT} of 69 °C due to the elongation of the V-V distance in its low-temperature monoclinic phase.

  11. Method of surface treatment on sapphire substrate

    Institute of Scientific and Technical Information of China (English)

    NIU Xin-huan; LIU Yu-ling; TAN Bai-mei; HAN Li-ying; ZHANG Jian-xin

    2006-01-01

    Sapphire single crystals are widely used in many areas because of the special physic properties and important application value. As an important substrate material,stringent surface quality requirements,i.e. surface finish and flatness,are required. The use of CMP technique can produce high quality surface finishes at low cost and with fast material removal rates. The sapphire substrate surface is treated by using CMP method. According to sapphire substrate and its product properties,SiO2 sol is chosen as abrasive. The particle size is 15-25 nm and the concentration is 40%. According to the experiment results,pH value is 10.5-11.5. After polishing and cleaning the sapphire surface,the surface roughness was measured by using AFM method and the lowest value of Ra 0.1 nm was obtained. From the results,it can be seen that using such method,the optimal sapphire surface can be gotten,which is advantageous for epitaxial growth and device making-up.

  12. Optical Characteristics of Ti∶Sapphire Grown by Kyropoulos Technique%泡生法生长钛宝石的光学特征

    Institute of Scientific and Technical Information of China (English)

    张宝辉; 徐军; 杨秋红; 王静雅; 唐慧丽

    2013-01-01

    钛宝石单晶是重要的可调谐激光晶体材料,当前的研究重点在于获取大尺寸、高质量钛宝石晶体来满足高能激光发展的需求.采用先进泡生法(KY)生长技术,通过对生长工艺的优化控制,成功生长出了高质量的30 kg级钛宝石晶体,钛的掺杂离子数分数为0.2%.实验测试结果表明,晶体中钛离子浓度分布均匀,光学性能良好,晶体品质因素(FOM)值大于200.实验结果对于实现高质量、大尺寸钛宝石晶体的生长及其激光应用具有十分重要的意义.%Ti∶sapphire single crystals are important tunable laser materials.Recent researches are focusing on how to grow large-size and high-quality Ti∶ sapphire crystals to meet the demand of high-energy laser development.30 kg grade Ti∶sapphire of 0.2% ion concentrations has been successfully grown by the Kyropoulos (KY) technique through the optimization of the growth process.The experimental tests show that the crystal has a homogeneous titanium distribution and good optical performance.Meanwhile,the figure of merit (FOM) value of the crystal is larger than 200.The present paper is of great importance for the growth and laser application of large-size Ti∶ sapphire crystal.

  13. Rain Erosion Behavior of Silicon Dioxide Films Prepared on Sapphire

    Institute of Scientific and Technical Information of China (English)

    Liping FENG; Zhengtang LIU; Wenting LIU

    2005-01-01

    Silicon dioxide (SiO2) films were prepared on sapphire (α-Al2O3) by radio frequency magnetron reactive sputtering in order to in crease both transmission and rain erosion resistant performance of infrared domes of sapphire. Composition and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD),respectively. The transmittance of uncoated and coated sapphire was measured using a Fourier transform infrared(FTIR) spectrometer. Rain erosion tests of the uncoated and coated sapphire were performed at 211 m/s impact velocity with an exposure time ranging from 1 to 8 min on a whirling arm rig. Results show that the deposited films can greatly increase the transmission of sapphire in mid-wave IR. After rain erosion test, decreases in normalized transmission were less than 1% for designed SiO2 films and the SiO2 coating was strongly bonded to the sapphire substrate. In addition, sapphires coated with SiO2 films had a higher transmittance than uncoated ones after rain erosion.

  14. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    Directory of Open Access Journals (Sweden)

    Sung Bo Lee

    2015-07-01

    Full Text Available In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al2O3 with the substitution of Si for Al.

  15. World's largest sapphire for many applications

    Science.gov (United States)

    Khattak, Chandra P.; Shetty, Raj; Schwerdtfeger, C. Richard; Ullal, Saurabh

    2016-10-01

    Sapphire has been used for many high technology applications because of its excellent optical, mechanical, high temperature, abrasion resistance and dielectric properties. However, it is expensive and the volume of sapphire used has been limited. The potential sapphire requirements for LED and consumer electronic applications are very high. Emphasis has been on producing larger sapphire boules to achieve significant cost reductions so these applications are realized. World's largest sapphire boules, 500 mm diameter 300+kg, have been grown to address these markets.

  16. Study on the Anisotropy of Meniscus in the Growing Sapphire

    Institute of Scientific and Technical Information of China (English)

    YAO Tai; ZUO Hong-bo; HAN Jie-cai; MENG Song-he; ZHANG Ming-fu; LI Chang-qing; Grigoryan Benik

    2006-01-01

    This study is aimed at predicting the relationship between the meniscus and the quality of the sapphire crystals produced by the micro-pulling and shoulder at cooled center (SAPMIC) technique. As with different orientations, the shapes of the meniscus vary, so an investigation into the anisotropy of the meniscus shapes is very important for the final quality of the sapphire crystal. An effective model to describe meniscus shapes and their formation process has been presented. The model has been applied to a sapphire crystal of 200 mm diameter in order to check its reliability. The results show that the model proves to be useful for forecasting the final shapes of the sapphire crystal made by the SAPMIC technique.

  17. Second generation 50 K dual-mode sapphire oscillator.

    Science.gov (United States)

    Anstie, James D; Hartnett, John G; Tobar, Michael E; Ivanov, Eugene N; Stanwix, Paul L

    2006-02-01

    Low-temperature, high-precision sapphire resonators exhibit a turning point in mode frequency-temperature dependence at around 10 K. This, along with sapphire's extremely low dielectric losses at microwave frequencies, results in oscillator fractional frequency stabilities on the order of 10(-15). At higher temperatures the lack of a turning point makes single-mode oscillators very sensitive to temperature fluctuations. By exciting two quasi-orthogonal whispering gallery (WG) modes in a single sapphire resonator, a turning point in the frequency-temperature dependence can be found in the beat frequency between the two modes. A temperature control technique based on mode frequency temperature dependence has been used to maintain the sapphire at this turning point and the fractional frequency instability of the beat frequency has been measured to be at a level of 4.3 X 10(-14) over 1 s, dropping to 3.5 X 10(-14) over 4 s integration time.

  18. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  19. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

    Science.gov (United States)

    Polyakov, A. Y.; Jang, Lee-Woon; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Yugova, T. G.; Reznik, V. Y.; Pearton, S. J.; Baik, Kwang Hyeon; Hwang, Sung-Min; Jung, Sukkoo; Lee, In-Hwan

    2011-11-01

    The electrical properties, presence of deep electron and hole traps and photoluminescence spectra were measured for undoped a-GaN films grown by metal-organic chemical vapor deposition (MOCVD) in a two-stage process using a high V/III ratio at the first stage and low V/III ratio at the second stage. Growth was performed on r-sapphire substrates with a high temperature GaN nucleation layer. The films showed a full width at half maximum of 450-470 arcseconds for the (11-20) x-ray rocking curve with little anisotropy with respect to the sample rotation around the growth direction. The stacking fault (SF) density determined by selective etching was ˜5 × 104 cm-1. The residual donor concentration was 1014-1015 cm-3, with a very low density (2.5 × 1013 cm-3) of electron traps located at Ec - 0.6 eV, which are believed to be one of the major non-radiative recombination centers in nonpolar GaN. Consequently, the films showed a high intensity of bandedge luminescence with negligible contribution from defect bands associated with SFs. In contrast to previously studied nonpolar GaN films, the a-GaN layers showed a high concentration of gallium-vacancy-related acceptors near Ev + 1 eV and a strong yellow luminescence band, both indicating that growth conditions were effectively N-rich. a-AlGaN/GaN heterojunctions with thin heavily Si doped AlGaN barriers made on a-GaN substrates showed two-dimensional electron gas (2DEG) concentrations of 1.2 × 1013 cm-3, with 2DEG mobility of 80 cm2/Vs. Capacitance-voltage profiling of Schottky diodes on these HJs suggest that the 2DEG is fully depleted by the built-in voltage of the Schottky diode.

  20. The growth of sapphire single crystals

    Directory of Open Access Journals (Sweden)

    STEVAN DJURIC

    2001-06-01

    Full Text Available Sapphire (Al2O3 single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation wc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  1. Results of shielding characteristics tests in Monju

    Energy Technology Data Exchange (ETDEWEB)

    Usami, Shin; Suzuoki, Zenro; Deshimaru, Takehide; Nakashima, Fumiaki [Japan Nuclear Cycle Development Inst., Tsuruga, Fukui (Japan)

    2001-06-01

    In the prototype fast breeder reactor Monju, the shielding characteristics tests were made around the reactor core, the primary heat transport system, and the fuel handling and storage system as a part of the system start-up tests from 0% to 45% of rated power from October 1993 through December 1995. The results of the measurements, analyses and evaluations in these tests validated the FBR shielding analysis methods and demonstrated that there was a safe shielding design margin in Monju. The important basic data for use in future FBR shielding design were successfully acquired. In order to obtain more substantial basic data and to improve the accuracy of the analyses, the next shielding measurements are planned for the period of the system start-up tests at the restart of Monju. (author)

  2. Investigation of sapphire detector designed for single particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Karacheban, Olena; Hempel, Maria [DESY, Zeuthen (Germany); Brandenburg University of Technology, Cottbus (Germany); Afanaciev, Konstantin [NCPHEP, Minsk (Belarus); Henschel, Hans; Lange, Wolfgang; Leonard, Jessica [DESY, Zeuthen (Germany); Levy, Itamar [Tel Aviv University, Tel Aviv (Israel); Lohmann, Wolfgang [Brandenburg University of Technology, Cottbus (Germany); CERN, Geneva (Switzerland); Novgorodova, Olga [Technical University, Dresden (Germany); Schuwalow, Sergej [DESY, Hamburg (Germany)

    2015-07-01

    For beam halo and beam loss monitoring systems at accelerators extremely radiation hard sensors are needed. Single crystal sapphire is a promising material. Industrially grown sapphire wafers are available in large sizes, are low in cost and can be operated at room temperature. Currently sapphire sensors are used for a beam-loss monitor at FLASH,detecting bunches of particles crossing the sensors simultaneously. Here we present a multichannel detector designed for single minimum ionising particle detection using a stack of sapphire plates. The performance of the detector was studied in a 5 GeV electron beam at DESY-II. The detector was operated together with the EUDET beam telescope, which allowed the reconstruction of the position of the hits at the detector. For each sapphire plate the charge collection efficiency was measured as a function of the bias voltage and the signal size as a function of the hit position with respect to the metal electrodes. The data confirms that mainly electrons contribute to the signal. Based on these results the next generation sapphire detector will be designed.

  3. Preliminary results of ground-motion characteristics

    Directory of Open Access Journals (Sweden)

    Francesca Bozzoni

    2012-10-01

    Full Text Available The preliminary results are presented herein for the engineering applications of the characteristics of the ground motion induced by the May 20, 2012, Emilia earthquake. Shake maps are computed to provide estimates of the spatial distribution of the induced ground motion. The signals recorded at the Mirandola (MRN station, the closest to the epicenter, have been processed to obtain acceleration, velocity and displacement response spectra. Ground-motion parameters from the MRN recordings are compared with the corresponding estimates from recent ground-motion prediction equations, and with the spectra prescribed by the current Italian Building Code for different return periods. The records from the MRN station are used to plot the particle orbit (hodogram described by the waveform. The availability of results from geotechnical field tests that were performed at a few sites in the Municipality of Mirandola prior to this earthquake of May 2012 has allowed preliminary assessment of the ground response. The amplification effects at Mirandola are estimated using fully stochastic site-response analyses. The seismic input comprises seven actual records that are compatible with the Italian code-based spectrum that refers to a 475-year return period. The computed acceleration response spectrum and the associated dispersion are compared to the spectra calculated from the recordings of the MRN station. Good agreement is obtained for periods up to 1 s, especially for the peak ground acceleration. For the other periods, the spectral acceleration of the MRN recordings exceeds that of the computed spectra.

  4. Pumping of titanium sapphire laser

    Science.gov (United States)

    Jelínková, H.; Vaněk, P.; Valach, P.; Hamal, K.; Kubelka, J.; Škoda, V.; Jelínek, M.

    1993-02-01

    Two methods of Ti:Sapphire pumping for the generation of tunable laser radiation in the visible region were studied. For coherent pumping, the radiation of the second harmonic of a Nd:YAP laser was used and a maximum output energy of E out=4.5 mJ was reached from the Ti:Sapphire laser. For noncoherent pumping, two different lengths of flashlamp pulses were used and a maximum of E out=300 mJ was obtained. Preliminary estimations of the wavelength range of tunability were made.

  5. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series...... of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  6. Ga/Mg ratio as a new geochemical tool to differentiate magmatic from metamorphic blue sapphires

    Science.gov (United States)

    Peucat, J. J.; Ruffault, P.; Fritsch, E.; Bouhnik-Le Coz, M.; Simonet, C.; Lasnier, B.

    2007-10-01

    Using ICP-MS-LA analyses, we demonstrate that the use of the Ga/Mg ratio, in conjunction with the Fe concentration, is an efficient tool in discriminating between "metamorphic" and "magmatic" blue sapphires. Magmatic blue sapphires found in alkali basalts (e.g. southeastern Asia, China, Africa) are commonly medium-rich to rich in Fe (with average contents between 2000 and 11000 ppm), high in Ga (> 140 ppm), and low in Mg (generally 10). Conversely, metamorphic blue sapphires found in basalts (e.g. Pailin pastel) and in metamorphic terrains (e.g. Mogok, Sri Lanka, Ilakaka) are characterized by low average iron contents ( 60 ppm) with low average Ga/Mg ratios (< 10). Basaltic magmatic sapphires have Fe, Ga and Mg contents similar to those obtained for primary magmatic sapphires found in the Garba Tula syenite. This suggests that these both sets of sapphires have a possible common "syenitic" origin, as previously proposed from other criteria. In addition, plumasite-related sapphires and metamorphic sapphires also exhibit similar composition in trace elements. Based on results from the present study, we suggest that fluid circulations during a metamorphic stage produced metasomatic exchanges between mafic and acidic rocks (plumasite model), thus explaining the high Mg contents and converging Ga/Mg ratios observed in metamorphic sapphires.

  7. Voltage-Controlled Sapphire Oscillator: Design, Development, and Preliminary Performance

    Science.gov (United States)

    Wang, R. T.; Dick, G. J.; Tjoelker, R. L.

    2007-08-01

    We present the design for a new short-term frequency standard, the voltage-controlled sapphire oscillator, as a practical and lower-cost alternative to a cryogenic sapphire oscillator operating at liquid helium temperatures. Performance goals are a frequency stability of 1 x 10^-14 (1 second equal to or less than tau equal to or less than 100 seconds), more than 2 years of continuous operation, and practical operability. Key elements include the sapphire resonator, low-power and long-life cryocooler, frequency compensation method, and cryo-Pound design. We report the design verification, experimental results, and test results of the cryocooler environmental sensitivity, as well as a preliminary stability measurement.

  8. Clinical Application of the Sapphire Unfolder Lens Injection System

    Institute of Scientific and Technical Information of China (English)

    Weiai Guo; Danying Zheng; Zhenyu Li; Yiyong Qian; Zhenping Zhang

    2002-01-01

    Purpose: To summarize the clinical experience of 300 cases using the Sapphire unfloder intraocular lens (IOL) injection system.Methods: After the standard phacoemulsification, an AR40e IOL was implanted using the Sapphire Unfolder. The involved problems during and after the operation were observed and analyzed.Results:The complications occurred during the operation including the crack at the haptic-optic junction in 2 cases, slight kink in the haptic in 5 cases, IOL clamp into the cartridge in 2 cases, posterior capsular rupture in 2 cases and endothelium damage in the central small area in 4 cases. All the patients recovered successfully with IOLs in good position.Conclusion: IOL implantation with the Sapphire Unfolder led to no serious complications and got the satisfactory results.

  9. The effect of crystal orientation on the cryogenic strength of hydroxide catalysis bonded sapphire

    Science.gov (United States)

    Haughian, K.; Douglas, R.; van Veggel, A. A.; Hough, J.; Khalaidovski, A.; Rowan, S.; Suzuki, T.; Yamamoto, K.

    2015-04-01

    Hydroxide catalysis bonding has been used in gravitational wave detectors to precisely and securely join components of quasi-monolithic silica suspensions. Plans to operate future detectors at cryogenic temperatures has created the need for a change in the test mass and suspension material. Mono-crystalline sapphire is one candidate material for use at cryogenic temperatures and is being investigated for use in the KAGRA detector. The crystalline structure of sapphire may influence the properties of the hydroxide catalysis bond formed. Here, results are presented of studies of the potential influence of the crystal orientation of sapphire on the shear strength of the hydroxide catalysis bonds formed between sapphire samples. The strength was tested at approximately 8 K; this is the first measurement of the strength of such bonds between sapphire at such reduced temperatures. Our results suggest that all orientation combinations investigated produce bonds of sufficient strength for use in typical mirror suspension designs, with average strengths >23 MPa.

  10. Hydrogen effect on the properties of sapphire

    Science.gov (United States)

    Mogilevsky, Radion N.; Sharafutdinova, Liudmila G.; Nedilko, Sergiy; Gavrilov, Valeriy; Verbilo, Dmitriy; Mittl, Scott D.

    2009-05-01

    Sapphire is a widely used material for optical, electronic and semiconductor applications due to its excellent optical properties and very high durability. Optical and mechanical properties of sapphire depend on many factors such as the starting materials that are used to grow crystals, methods to grow sapphire crystals, etc. Demand for highest purity and quality of sapphire crystals increased ten fold for the last several years due to new applications for this material. In this work we studied the effect of starting materials and crystal growth methods on the optical and mechanical properties of sapphire, especially concentrating on the effect of hydrogen on the properties of sapphire. It was found that the infrared (IR) absorption which is traditionally used to measure the hydrogen content in sapphire crystals cannot be reliably used and the data obtained by this method provides a much lower hydrogen concentration than actual. We have shown for the first time that Nuclear Magnetic Resonance techniques can be successfully used to determine hydrogen concentration in sapphire crystals. We have shown that hydrogen concentration in sapphire can reach thousands of ppm if these crystals are grown from Verneuil starting material or aluminum oxide powder. Alternatively, the hydrogen concentration is very low if sapphire crystals are grown from High Purity Densified Alumina (HPDA®) as a starting material. HPDA® is produced by EMT, Inc through their proprietary patented technology. It was found that optical and mechanical properties of sapphire crystals grown using EMT HPDA® starting material are much better than those sapphire crystals grown using a starting material of Verneuil crystals or aluminum oxide powder.

  11. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  12. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  13. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  14. Shock Induced Emission from Sapphire in High-Pressure Phase of Rh2O3 (Ⅱ) Structure

    Institute of Scientific and Technical Information of China (English)

    ZHANG Dai-Yu; LIU Fu-Sheng; HAO Gao-Yu; SUN Yu-Huai

    2007-01-01

    @@ A distinct optical emission from the Rh2 O3 (Ⅱ) structural sapphire is observed under shock compression of 125,132, and 143 Gpa. The emission intensity continuously increases with the thickness of shocked sapphire. The colour temperature is determined to be about 4000K, which is obviously smaller than the reported value of the alpha phase alumina at the pressures below 80 Gpa. The present results suggest that the structural transformation will cause an obvious change of optical property in sapphire.

  15. Origin of Difference in Photocatalytic Activity of ZnO (002 Grown on a- and c-Face Sapphire

    Directory of Open Access Journals (Sweden)

    Guoqiang Li

    2014-01-01

    Full Text Available The oriented (002 ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002 ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.

  16. Ti:sapphire laser with long-pulse lamp pumping

    Science.gov (United States)

    Koselja, Michael P.; Kubelka, Jiri; Kvapil, Jiri

    1992-06-01

    Lamp pumping of Ti:Sapphire has some advantages over laser pumping and represents some interest due to possible applications. The paper will present laser behavior of Ti:Sapphire under very long lamp pulse pumping. Pulse lamp duration (FWHM) was more than 100 times greater than the lifetime of Ti3+. Output energy with no tuning element was achieved greater than 1.5 J with 0.12% electrical-to-optical efficiency. Dimensions of the rod used was 7 mm in diameter and 148 mm in length. The doping level of Ti3+ was 0.09% Ti2O3 in the rod. Tuning characteristics with different tuning elements are also presented. Further development to obtain CW lamp pumping operation will be discussed.

  17. Large-scale inhomogeneity in sapphire test masses revealed by Rayleigh scattering imaging

    Science.gov (United States)

    Yan, Zewu; Ju, Li; Eon, François; Gras, Slawomir; Zhao, Chunnong; Jacob, John; Blair, David G.

    2004-03-01

    Rayleigh scattering in test masses can introduce noise and reduce the sensitivity of laser interferometric gravitational wave detectors. In this paper, we present laser Rayleigh scattering imaging as a technique to investigate sapphire test masses. The system provides three-dimensional Rayleigh scattering mapping of entire test masses and quantitative evaluation of the Rayleigh scattering coefficient. Rayleigh scattering mapping of two sapphire samples reveals point defects as well as inhomogeneous structures in the samples. We present results showing significant non-uniform scattering within two 4.5 kg sapphire test masses manufactured by the heat exchanger method.

  18. GaN on sapphire mesa technology

    Energy Technology Data Exchange (ETDEWEB)

    Herfurth, Patrick; Men, Yakiv; Kohn, Erhard [Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein Allee 45, 89081 Ulm (Germany); Roesch, Rudolph [Institute of Optoelectronics, Albert-Einstein Allee 45, 89081 Ulm (Germany); Carlin, Jean-Francois; Grandjean, Nicolas [Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique Federal de Lausanne, 1015 Lausanne (Switzerland)

    2012-03-15

    This contribution reports on a GaN on sapphire mesa technology for lattice matched InAlN/GaN HEMTs similar to a silicon on insulator technology. Ultrathin buffer layers between 500 nm and 100 nm have been deep mesa etched down to the substrate to avoid cross talk between devices through the buffer and provide full transparency outside the active device area (of special interest to biochemical sensor applications).The heterostructure characteristics were: N{sub S}> 1.6 x 10{sup 13} cm{sup -2}, R{sub sh}< 600 {omega}/{open_square}. 0.25 {mu}m gate length HEMT device characteristics are moderate, but essentially similar down to 200 nm buffer thickness. Devices on 100 nm buffer layer are still difficult to reproduce. I{sub on}/I{sub off} was up to 10{sup 9} and sub-threshold slopes down to 90 mV/dec (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Sapphire Viewports for a Venus Probe Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed Phase 1 program will demonstrate that sapphire viewports are feasible for use in Venus probes. TvU's commercial viewport products have demonstrated that...

  20. Secondary particle emission from sapphire single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Minnebaev, K.F., E-mail: minnebaev@mail.ru [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Khvostov, V.V.; Zykova, E.Yu.; Tolpin, K.A. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Colligon, J.S. [Manchester Metropolitan University, Chester Street, Manchester M1 5GD (United Kingdom); Yurasova, V.E. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    Secondary ion emission from sapphire single crystal has been studied experimentally and by means of computer simulation. The particular oscillations of secondary ion energy spectra and two specific maxima of O{sup +} and Al{sup +} ions were observed under irradiation of (0001) sapphire face by 1 and 10 keV Ar{sup +} ions. We have explained this by the interplay of the charge exchange processes between moving particles and solids. The existence of two maxima in energy spectra of O{sup +} and Al{sup +} secondary ions can be also connected with special features of single-crystal sputtering: the low-energy peak can be formed by random sputtering and the high-energy peak from focusing collisions. In addition some similarity was found between the positions of low-energy maximum in energy spectra of Al{sup +} ions emitted from sapphire and the principal maxima of Al{sup +} ions ejected from the aluminum single crystal. This indicates a possibility to explain the presence of low-energy maximum in energy spectra of secondary ions ejecting from sapphire by emission of Al{sup +} ions from aluminum islands appearing in a number of cases on the sapphire surface due to preferential sputtering of oxygen. These different mechanisms of creating the energy spectra of ions emitted from sapphire should be taken in account.

  1. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    facility in Terre Haute, Indiana. Due to business conditions at industrial partner and several logistical problems, this field test was not successful. An alternative high-temperature sensing system using sapphire wafer-based extrinsic Fabry-Perot interferometry was then developed as a significant improvement over the BPDI solution. From June 2006 to June 2008, three consecutive field tests were performed with the new sapphire wafer sensors at the TECO coal gasifier in Tampa, Florida. One of the sensors survived in the industrial coal gasifier for 7 months, over which time the existing thermocouples were replaced twice. The outcome of these TECO field tests suggests that the sapphire wafer sensor has very good potential to be commercialized. However packaging and sensor protection issues need additional development. During Phase III, several major improvements in the design and fabrication process of the sensor have been achieved through experiments and theoretical analysis. Studies on the property of the key components in the sensor head, including the sapphire fiber and sapphire wafer, were also conducted, for a better understanding of the sensor behavior. A final design based on all knowledge and experience has been developed, free of any issues encountered during the entire research. Sensors with this design performed well as expected in lab long-term tests, and were deployed in the sensing probe of the final coal-gasifier field test. Sensor packaging and protection was improved through materials engineering through testing of packaging designs in two blank probe packaging tests at Eastman Chemical in Kingsport, TN. Performance analysis of the blank probe packaging resulted in improve package designs culminating in a 3rd generation probe packaging utilized for the full field test of the sapphire optical sensor and materials designed sensor packaging.

  2. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser....... However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy....

  3. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  5. The Multivariate Resultant Is NP-hard in Any Characteristic

    Science.gov (United States)

    Grenet, Bruno; Koiran, Pascal; Portier, Natacha

    The multivariate resultant is a fundamental tool of computational algebraic geometry. It can in particular be used to decide whether a system of n homogeneous equations in n variables is satisfiable (the resultant is a polynomial in the system's coefficients which vanishes if and only if the system is satisfiable). In this paper we present several NP-hardness results for testing whether a multivariate resultant vanishes, or equivalently for deciding whether a square system of homogeneous equations is satisfiable. Our main result is that testing the resultant for zero is NP-hard under deterministic reductions in any characteristic, for systems of low-degree polynomials with coefficients in the ground field (rather than in an extension). We also observe that in characteristic zero, this problem is in the Arthur-Merlin class AM if the generalized Riemann hypothesis holds true. In positive characteristic, the best upper bound remains PSPACE.

  6. Ordered gold nanostructures on sapphire surfaces: Fabrication and optical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Konovko, A. A. [Moscow State University (Russian Federation); Smirnov, I. S. [Moscow State University of Electronics and Mathematics (Russian Federation); Roshchin, B. S.; Volkov, Yu. O. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Angelutz, A. A.; Andreev, A. V.; Shkurinov, A. P. [Moscow State University (Russian Federation); Kanevskii, V. M.; Asadchikov, V. E. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The possibilities of obtaining ordered gold nanoarrays on sapphire surfaces with oriented nanorelief are demonstrated. The structures are morphologically described using atomic force microscopy data. A study of the angular dependence of the reflectivity in the visible range of electromagnetic waves has revealed some features which are likely to indicate surface plasmon-polariton excitation at the air-gold interface under exposure to p-polarized radiation. The experimental results are found to be in good agreement with the theoretical calculations.

  7. Supersmooth and modified surface of sapphire crystals: Formation, characterization, and applications in nanotechnologies

    Science.gov (United States)

    Muslimov, A. E.; Asadchikov, V. E.; Butashin, A. V.; Vlasov, V. P.; Deryabin, A. N.; Roshchin, B. S.; Sulyanov, S. N.; Kanevsky, V. M.

    2016-09-01

    The results of studying the state of the surface of sapphire crystals by a complex of methods in different stages of crystal treatment are considered by an example of preparing sapphire substrates with a supersmooth surface. The possibility of purposefully forming regular micro- and nanoreliefs and thin transition layers using thermal and thermochemical impacts are considered. The advantages of sapphire substrates with a modified surface for forming heteroepitaxial CdTe and ZnO semiconductor films and ordered ensembles of gold nanoparticles are described. The results of the experiments on the application of crystalline sapphire as a material for X-ray optical elements are reported. These elements include total external reflection mirrors and substrates for multilayer mirrors, output windows for synchrotron radiation, and monochromators working in the reflection geometry in X-ray spectrometers. In the latter case, the problems of the defect structure of bulk crystals sapphire and the choice of a method for growing sapphire crystals of the highest structural quality are considered.

  8. 单晶蓝宝石的延性研磨加工%Ductile lapping of single crystal sapphire

    Institute of Scientific and Technical Information of China (English)

    戴欣平; 赵萍; 文东辉

    2012-01-01

    To achieve the ductile lapping of a single crystal sapphire, micro/nano mechanic characteristics of the sapphire (0001) plane were measured by nanoindentation and nanoscratch methods. The indentation model of single cone abrasive grain was proposed and then critical force conditions were deduced during ductile lapping process. Experimental studies were conducted for the single crystal sapphire based on the diamond abrasive grain charging into a synthetic tin plate, and characteristics of ductile lapped surface were measured by a NT9800 white light interferometer, a Scan Emission Microscopy (SEM) and a Transmission Electron Microscopy (TEM). Experimental results show that nanoindentation and nanoscratch methods can provide processing parameters for the ductile lapping of single crystal sapphires, and its critical depth of pile-up is around 100 nm for sapphire nanoindenta-tion. The ductile lapping of the single crystal sapphire can be implemented by charging into diamond abrasive grains and selecting proper loads and the optimal load for ductile lapping is 21 kPa. After ductile lapping, the surface scratch depth of single crystal sapphire shows a smaller dispersion and the dislocation and slip are formed on the lapped surface.%为实现单晶蓝宝石的延性研磨加工,采用纳米压痕和划痕法测试并分析了单晶蓝宝石(0001)面的微纳力学特性,建立了单颗圆锥状磨粒的压入模型并计算了延性研磨加工的受力临界条件,分析了金刚石磨粒嵌入合成锡研磨盘表面的效果.对单晶蓝宝石进行了延性研磨加工试验,采用NT9800白光干涉仪、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等方法分析了单晶蓝宝石的延性研磨表面特征.试验结果表明:采用纳米压痕和划痕法可以为单晶蓝宝石的延性研磨加工提供工艺参数,单晶蓝宝石的延性堆积的极限深度为100 nm,金刚石磨粒的嵌入及在适当载荷下可以实现蓝宝石的延性研磨加

  9. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    Science.gov (United States)

    Deluca, J. J. (Inventor)

    1979-01-01

    An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  10. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  11. Sapphire: Relation between luminescence of starting materials and luminescence of single crystals

    Science.gov (United States)

    Mogilevsky, R.; Nedilko, S.; Sharafutdinova, L.; Burlay, S.; Sherbatskii, V.; Boyko, V.; Mittl, S.

    2009-10-01

    A relation between photoluminescence (PL) characteristics of different starting materials used for crystal growth and un-doped sapphire single crystals manufactured using various methods of crystal growth (Kyropolus, HEM, Czochralski, and EFG) was found. The crystals grown using the Verneuil starting material exhibited significant PL when any method of crystal growth was used. On the contrary, sapphire samples grown by the same technologies wherein the starting material was EMT HPDA R revealed very low PL. (HPDA R is produced by EMT, Inc., with proprietary and patented technology.)

  12. A comparative study on methods to structure sapphire

    NARCIS (Netherlands)

    Crunteanu, A.; Hoffmann, P.; Pollnau, M.; Buchal, C.

    2003-01-01

    Ti:sapphire is an attractive material for applications as a tunable or short-pulse laser and as a broadband light source in low-coherence interferometry. We investigated several methods to fabricate rib structures in sapphire that can induce channel waveguiding in Ti:sapphire planar waveguides. Thes

  13. SINGLE-CRYSTAL SAPPHIRE OPTICAL FIBER SENSOR INSTRUMENTATION

    Energy Technology Data Exchange (ETDEWEB)

    A. Wang; G. Pickrell; R. May

    2002-09-10

    material were thoroughly investigated to determine an optimal approach for on-line, real-time, reliable, long-term monitoring of temperatures inside the coal gasification environment. Among these were a sapphire fiber extrinsic Fabry-Perot interferometric (EFPI) sensor; an intensity-measurement based polarimetric sapphire sensor and a broadband polarimetric differential interferometric (BPDI) sapphire sensor. Based on the current evaluation and analysis of the experimental results, the broadband polarimetric differential interferometric (BPDI) sensor system was chosen for further prototype instrumentation development because of it's superior performance compared to the other systems. This approach is based on the self-calibrating measurement of the optical path length differences in a single-crystal sapphire disk, which is a function of both the temperature dependent birefringence and the temperature dependent dimensional changes.

  14. Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

    Science.gov (United States)

    Offord, Bruce W.

    1992-01-01

    In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

  15. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high- Q factor whispering gallery modes

    Science.gov (United States)

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy

    2010-09-01

    Resonance modes in single crystal sapphire (α-Al2O3) exhibit extremely high electrical and mechanical Q factors ( ≈109 at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T3 dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify “magic temperatures” between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  16. Layering of [BMIM]+-based ionic liquids at a charged sapphire interface.

    Science.gov (United States)

    Mezger, Markus; Schramm, Sebastian; Schröder, Heiko; Reichert, Harald; Deutsch, Moshe; De Souza, Emerson J; Okasinski, John S; Ocko, Benjamin M; Honkimäki, Veijo; Dosch, Helmut

    2009-09-07

    The structure of two model room temperature ionic liquids, [BMIM](+)[PF(6)](-) and [BMIM](+)[BF(4)](-), near the solid/liquid interface with charged Al(2)O(3)(0001) (sapphire) was determined with subnanometer resolution by high energy (72.5 keV) x-ray reflectivity. [BMIM](+)[PF(6)](-) exhibits alternately charged, exponentially decaying, near-surface layering. By contrast, the smaller-anion compound, [BMIM](+)[BF(4)](-), shows only a single layer of enhanced electron density at the interface. The different layering behaviors, and their characteristic length scales, correspond well to the different bulk diffraction patterns, also measured in this study. Complementary measurements of the surface and interface energies showed no significant different between the two RTILs. The combined bulk-interface results support the conclusion that the interfacial ordering is dominated by the same electrostatic ion-ion interactions dominating the bulk correlations, with hydrogen bonding and dispersion interactions playing only a minor role.

  17. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    2008-01-01

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in orde

  18. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in

  19. Advanced thin dicing blade for sapphire substrate

    Directory of Open Access Journals (Sweden)

    Koji Matsumaru, Atsushi Takata and Kozo Ishizaki

    2005-01-01

    Full Text Available Advanced thin dicing blades for cutting sapphire were fabricated and evaluated for cutting performance with respect to dicing blade wear and meandering of cutting lines. Three kinds of different commercial blades were used to compare the cutting performance. These blades had the same thickness and the same diamond grain size. The matrix material of one dicing blade was nickel–phosphorus alloy and two other were a vitric material. Newly developed dicing blades consisted of a vitric material with pore. A dicing machine was used for cutting sapphire. Turning velocity, cutting depth and feeding rate were 20,000 min−1, 200 μm and 1 mm s−1, respectivity. Cutting directions were 110 and 010. All blades could cut 1000 mm and more in the 110 direction. On the other hand, commercial dicing blades generated meandering lines and were broken only by 50 mm of cutting length in 010 direction. Fabricated blade can cut 1000 mm and more in 010 direction. The wear of fabricated dicing blade was the largest in the dicing blades. Although cutting performance of commercial dicing blades depended on the sapphire orientation, that of fabricated blade was independent of the sapphire orientation. It has been confirmed that the fabricated dicing blade was kept a cutting ability by flash diamonds on the dicing blade surface, which were created by wear of blade during cutting sapphire. Low cutting ability of commercial blades increased cutting force between with increase of cutting length. The increased cutting force produced to bend a blade and cutting lines, and finally a fracture of blade.

  20. Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhi-Feng; QIN Fu-Wen; ZANG Hai-Rong; ZHANG Dong; CHEN Wei-Ji; ZHI An-Bo; LIU Xing-Long; YU Bo; JIANG Xin

    2011-01-01

    Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100sccm.The results show that the properties of the films are strongly dependent on N2 flux.%@@ Highly preferred InN Rims are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer.The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement.The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm.The results show that the properties of the Rims are strongly dependent on N2 flux.

  1. Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; C.D. Beling; S. Fung

    2005-01-01

    @@ Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data,and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al+ ions, are also investigated. Studies on Al+ implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al+ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.

  2. Surface modification of sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  3. Revelation of Causes of Colour Change in Beryllium-Treated Sapphires

    Institute of Scientific and Technical Information of China (English)

    Pichet Limsuwan; Siwaporn Meejoo; Asanee Somdee; Kheamrutai Thamaphat; Treedej Kittiauchawal; Atitaya Siripinyanond; Jurek Krzystck

    2008-01-01

    Blue sapphires are treated with Be in oxidizing atmosphere to change the blue colour into yellow. Untreated and Be-treated samples are examined using laser ablation inductively coupled-plasma-mass spectrometry (LA-ICP-MS), electron spin resonance (ESR) and ultraviolet-visible (UV-vis) spectroscopy. The results show that the yellow colouration in Be-heated blue sapphires is not due to Be diffusion from the surface of sapphire. Be behaves as a sole catalyst in this process. We find that the charge transfer between the ferrous (Fe2+) and ferric (Fe3+) is the reason of the colour change. The above conclusions are confirmed by ESR measurements to determine the connections between the Fe3+ ions before and after Be-treated heat treatments.

  4. Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method

    Science.gov (United States)

    Ma, Wencheng; Zhao, Wenhan; Wu, Ming; Ding, Guoqiang; Liu, Lijun

    2017-09-01

    Transient numerical calculations were carried out to predict the evolutions of temperature and thermal stress in sapphire single crystal during the cooling process by heat exchanger method (HEM). Internal radiation in the semitransparent sapphire crystal was taken into account using the finite volume method (FVM) in the global heat transfer model. The numerical results seem to indicate that the narrow bottom region of the sapphire crystal is subjected to high thermal stress during the cooling process, which could be responsible for the seed cracking of the as-grown crystal, while the thermal stress is relatively small in the central main body of the crystal, and is less than 10 MPa during the whole cooling process. The fast decrease of the thermal stress in the bottom region of the crystal during the initial stage of cooling process is dominated by the reduction of the cooling helium gas in the heat exchanger shaft, and is not significantly affected by the heating power reduction rate.

  5. Rate of F center formation in sapphire under low-energy low-fluence Ar+ irradiation

    Science.gov (United States)

    Epie, E. N.; Wijesundera, D. N.; Tilakaratne, B. P.; Chen, Q. Y.; Chu, W. K.

    2016-03-01

    Ionoluminescence, optical absorption spectroscopy and Rutherford backscattering spectrometry channelling (RBS-C) have been used to study the rate of F center formation with fluence in 170 keV Ar+ irradiated single crystals of α-Al2O3 (sapphire) at room temperature. Implantation fluences range between 1013 cm-2 and 5 ×1014 cm-2. F center density (NF) has been found to display an initial rapid linear increase with Ar+ fluence followed by saturation to a maximum value of 1.74 ×1015 cm-2. Experimental results show a 1-1 correlation between radiation damage in the oxygen sublattice and F center density. This suggest F center kinetics in sapphire under low-energy low-fluence Ar irradiation is a direct consequence of dynamic competition between oxygen defect creation and recombination. An attempt has also been made to extend this discussion to F center kinetics in sapphire under swift heavy ion irradiation.

  6. Erbium-doped crystalline YAG planar and ridge waveguides on quartz and sapphire substrates: deposition and material characterisation

    Science.gov (United States)

    Facchini, G.; Zappettini, A.; Canali, A.; Martinelli, M.; Gabetta, G.; Tallarida, G.

    2001-06-01

    Er-doped Yttrium-Aluminium-Garnet (YAG) planar and ridge waveguides have been grown on quartz and sapphire substrates. The waveguides have been structurally, morphologically and stoichiometrically characterised by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Doping concentrations up to 5% have been successfully demonstrated. Deposition of channel waveguide on sapphire substrate results in a correct ridge shape.

  7. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  8. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Science.gov (United States)

    Marques, C.; Franco, N.; Alves, L. C.; da Silva, R. C.; Alves, E.; Safran, G.; McHargue, C. J.

    2007-04-01

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  9. Tunable Sum Frequency Mixing of a Ti∶sapphire Laser and a Nd∶YAG Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; YAO Jianquan; YU Yizhong; YU Xuanyi; XU Jingjun; ZHANG Guangyin

    2001-01-01

    In this paper the theoretical and experimental results of sum-frequency mixing of a Ti∶sapphire laser and a 1.064 μm Nd∶YAG laser are presented. By using two KTP crystals cut at θ=76° and 85° (φ=90° in both crystals), respectively, the sum-frequency mixing tuning range from 459.3 to 509.6 nm in one Ti∶sapphire laser setup is experimentally achieved. The maximum output energy was 14.6 mJ and the energy conversion efficiency was up to 15.2%.

  10. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Energy Technology Data Exchange (ETDEWEB)

    Marques, C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Franco, N. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, L.C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Silva, R.C. da [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, E. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal)]. E-mail: ealves@itn.pt; Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, C.J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2007-04-15

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 x 10{sup 17} cm{sup -2} at room temperature, followed by annealing at 1000 deg. C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  11. Birefringence measurements in single crystal sapphire and calcite shocked along the a axis

    Science.gov (United States)

    Tear, Gareth R.; Chapman, David J.; Eakins, Daniel E.; Proud, William G.

    2017-01-01

    Calcite and sapphire were shock compressed along the direction (a axis) in a plate impact configuration. Polarimetery and Photonic Doppler Velocimetery (PDV) were used to measure the change in birefringence with particle velocity in the shock direction. Results for sapphire agree well with linear photoelastic theory and current literature showing a linear relationship between birefringence and particle velocity up to 310 m s-1. A maximum change in birefringence of 5% was observed. Calcite however showed anomolous behaviour with no detectable change in birefringence (less than 0.1%) over the range of particle velocities studied (up to 75 m s-1).

  12. Two Wavelength Ti:sapphire Laser for Ozone DIAL Measurements from Aircraft

    Science.gov (United States)

    Situ, Wen; DeYoung, Russel J.

    1998-01-01

    Laser remote sensing of ozone from aircraft has proven to be a valuable technique for understanding the distribution and dynamics of ozone in the atmosphere. Presently the differential absorption lidar (DIAL) technique, using dual ND:YAG lasers that are doubled to pump dye lasers which in turn are doubled into the UV for the "on" and "off' line lasers, is used on either the NASA DC-8 or P-3 aircraft. Typically, the laser output for each line is 40-mJ and this is split into two beams, one looking up and the other downward, each beam having about 20-mJ. The residual ND:YAG (1.06 micron) and dye laser energies are also transmitted to obtain information on the atmospheric aerosols. While this system has operated well, there are several system characteristics that make the system less than ideal for aircraft operations. The system, which uses separate "on" and "off" line lasers, is quite large and massive requiring valuable aircraft volume and weight. The dye slowly degrades with time requiring replacement. The laser complexity requires a number of technical people to maintain the system performance. There is also the future interest in deploying an ozone DIAL system in an Unpiloted Atmospheric Vehicle (UAV) which would require a total payload mass of less than 150 kg and power requirement of less than 1500 W. A laser technology has emerged that could potentially provide significant enhancements over the present ozone DIAL system. The flashlamp pumped Ti:sapphire laser system is an emerging technology that could reduce the mass and volume over the present system and also provide a system with fewer conversion steps, reducing system complexity. This paper will discuss preliminary results from a flashlamp-pumped Ti:sapphire laser constructed as a radiation source for a UV DIAL system to measure ozone.

  13. Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Grabowska, J.; Rajendra Kumar, R.T. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); McGlynn, E. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)], E-mail: enda.mcglynn@dcu.ie; Nanda, K.K. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); Newcomb, S.B. [Glebe Scientific Ltd., Newport, Co. Tipperary (Ireland); McNally, P.J.; O' Reilly, L. [School of Electronic Engineering/Research Institute for Networks and Communications Engineering, Dublin City University (Ireland); Mosnier, J.-P.; Henry, M.O. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)

    2008-02-29

    Epitaxially ordered zinc aluminate domains with sub-micron dimensions are formed on bare c-sapphire substrates using a vapour phase method (with vapour generated by carbothermal reduction of ZnO) at various temperatures and growth durations. A zinc aluminate (ZnAl{sub 2}O{sub 4}) layer is formed by reaction of the source materials (Zn and O) with the substrate. We observe crystallites with a well-defined epitaxial relationship on the sapphire substrate in addition to polycrystalline material. The epitaxially oriented deposit displays the form of characteristically twinned (singly or multiply) grains of sub-micron dimensions with three variants, consistent with the c-sapphire substrate symmetry. Scanning electron microscopy and transmission electron microscopy studies show that the formation of these grains is associated with the presence of extended defects in the sapphire substrate. Epitaxially ordered grains formed at higher temperatures show a change in the nature of the twin boundaries and epitaxial relations as a function of growth time, attributed to the effects of annealing during growth.

  14. Photonic detection and characterization of DNA using sapphire microspheres

    OpenAIRE

    Serpengüzel, Ali; Murib, Mohammed Sharif; Yeap, Weng-Siang; Martens, Daan; Bienstman, Peter; De Ceuninck, Ward; van Grinsven, Bart; Schoening, Michael J.; Michiels, Luc; Haenen, Ken; Ameloot, Marcel; Wagner, Patrick

    2014-01-01

    A microcavity-based deoxyribonucleic acid (DNA) optical biosensor is demonstrated for the first time using synthetic sapphire for the optical cavity. Transmitted and elastic scattering intensity at 1510 nm are analyzed from a sapphire microsphere (radius 500 mu m, refractive index 1.77) on an optical fiber half coupler. The 0.43 nm angular mode spacing of the resonances correlates well with the optical size of the sapphire sphere. Probe DNA consisting of a 36-mer fragment was covalently immob...

  15. Superexciplex of Coumarin Molecules using Tunable Ti-Sapphire Laser

    Science.gov (United States)

    Al-Ghamdi, Attieh Ali; Al-Dwayyan, Abdullah S.; Masilamani, Vadivel; Al-Saud, Turki Saud M.; Al-Salhi, Mohammed Saleh

    2003-10-01

    Certain highly polar dye molecules exhibit an additional optical gain band under pulsed laser excitation, while there is no such band under steady-state continuous wave (CW) lamp excitation. This new band is not due to an excimer, an exciplex or a two-photon fluorescence band but stems from the formation of a new molecular complex in which two excited molecules remain associated with a solvent molecule acting as a bridge. In this paper, the characteristics of superexciplexes of four related coumarin molecules are presented. All molecules were excited using a tunable Ti-sapphire laser pulse 10 ns in width. The distinct difference between the amplified spontaneous emission (ASE) spectra obtained with tunable laser and tunable lamp excitation demonstrated that twisted intramolecular charge transfer (TICT) conformations might also assist in the formation of these superexciplexes.

  16. REINFORCEMENT OF NICKEL CHROMIUM ALLOYS WITH SAPPHIRE WHISKERS.

    Science.gov (United States)

    SAPPHIRE, COMPOSITE MATERIALS, CERAMIC FIBERS , CERAMIC FIBERS , TITANIUM COMPOUNDS, ZIRCONIUM COMPOUNDS, HYDRIDES, ADDITIVES, CHROMIUM ALLOYS, FIBER METALLURGY, IRON COMPOUNDS, ENCAPSULATION, DENSITY, SURFACE TENSION.

  17. Civilian First Responder Decontamination Equipment Characteristics Survey Results

    Science.gov (United States)

    2010-01-01

    of Standards and Technology (DHS/NIST) Standards Development Team to develop a survey to determine important characteristics of first responder decontamination...a draft American Society for Testing Materials standard for civilian first responder decontamination systems.

  18. Temperature behavior of damage in sapphire implanted with light ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal)], E-mail: ealves@itn.pt; Marques, C. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal); Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, Carl J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10{sup 16}-1 x 10{sup 17} cm{sup -2}) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 deg. C and 1000 deg. C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10{sup 17} cm{sup -2}. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 deg. C and 1000 deg. C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  19. Use of Be(p,{alpha}) and Be(p,d) Reactions to Determine Be Content in Sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Franklyn, C. B. [Radiation Science Department, Necsa, PO Box 582, Pretoria 0001 (South Africa)

    2011-12-13

    Since natural coloured sapphire ({alpha}-Al{sub 2}O{sub 3}) commands a high gem stone market price there is a need for a reliable method of identifying artificially coloured sapphire that has an inherently lower value. Diffusing beryllium into sapphire at high temperatures results in a coloured stone virtually indistinguishable from a natural one. Beryllium can occur naturally in sapphire but at levels of <1 ppma. Beryllium diffused sapphire typically contains >10 ppma, which is difficult to determine in a non destructive way. It is possible to utilize nuclear reaction analysis techniques to determine the beryllium content in a macroscopically non destructive way. Kinematically ideal reactions are Be(p,{alpha}) and Be(p,d) which, for Ep = 0.5 to 0.9 MeV, exhibit distinct reaction product signatures well separated from other proton induced reactions in aluminium or oxygen. Due to the lack of comprehensive cross section data for the Be(p,{alpha}) and Be(p,d) reactions in the energy range of interest, a series of measurements were made at the Van de Graaff accelerator facility at Necsa to create a new data base. A further outcome of these measurements was a deviation in reported values for the non-Rutherfordian proton back-scatter cross section. These new data bases, which extend to Ep = 2.6MeV, can now facilitate a procedure for determining beryllium content in sapphire.

  20. Preparation of Ce-doped colloidal SiO{sub 2} composite abrasives and their chemical mechanical polishing behavior on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Hong, E-mail: hong_lei2005@aliyun.com [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China); Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444 (China); Tong, Kaiyu; Wang, Zhanyong [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China)

    2016-04-01

    Chemical mechanical polishing (CMP) has become a widely accepted global planarization technology. Abrasive is one of key elements during CMP process. In order to enhance removal rate and improve surface quality of sapphire substrate, a series of novel Ce-doped colloidal SiO{sub 2} composite abrasives were prepared by chemical co-precipitation method. The CMP performances of the Ce-doped colloidal SiO{sub 2} composite abrasives on sapphire substrate were investigated by using UNIPOL-1502 polishing equipment. The analyses on the surface of polished sapphire substrate indicate that slurries containing the Ce-doped colloidal SiO{sub 2} composite abrasives exhibit lower surface roughness, higher material removal rate than that of pure colloidal SiO{sub 2} abrasive under the same testing conditions. Furthermore, the acting mechanism of the Ce-doped colloidal silica in sapphire CMP was investigated. X-ray photoelectron spectroscopy analysis shows that solid-state chemical reactions between Ce-doped silica abrasives and sapphire surface occur during CMP process, which can promote the chemical effect in CMP and lead to the improvement of material removing rate. - Highlights: • Novel Ce-doped colloidal SiO{sub 2} composite abrasives were prepared. • The chemical mechanical polishing (CMP) performances of the composite abrasives on sapphire substrate were investigated. • Novel composite abrasives show excellent polishing characteristics comparison with pure colloidal SiO{sub 2} abrasive. • We explore and report the acting mechanism of composite abrasives to sapphire CMP.

  1. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.;

    1976-01-01

    of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection......Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...

  2. High-power solid-state sapphire whispering gallery mode maser.

    Science.gov (United States)

    Creedon, Daniel L; Benmessaï, Karim; Tobar, Michael E; Hartnett, John G; Bourgeois, Pierre-Yves; Kersale, Yann; Le Floch, Jean-Michel; Giordano, Vincent

    2010-03-01

    We present new results on a cryogenic solid-state maser frequency standard, which relies on the excitation of whispering gallery (WG) modes within a doped monocrystalline sapphire resonator (alpha-Al2O3). Included substitutively within the highest purity HEMEX-grade sapphire crystal lattice are Fe2+ impurities at a concentration of parts per million, an unavoidable result of the manufacturing process. Mass conversion of Fe2+ to Fe3+ ions was achieved by thermally annealing the sapphire in air. Above-threshold maser oscillation was then excited in the resonator at zero applied DC magnetic field by pumping high-Q WG modes coincident in frequency with the electron spin resonance (ESR) energy levels of the Fe3+ spin population. A 2 stage annealing process was undertaken for a sapphire resonator with exceptionally low Fe3+ concentration, resulting in an improvement of 6 orders of magnitude in output power for this particular crystal, and exceeding the previous best implementation of our scheme in another crystal by nearly 20 dB. This represents an output signal 7 orders of magnitude more powerful than a typical commercial hydrogen maser. At this power level, we estimate a limit on the frequency stability of order 1 x 10(-17)/square root(tau) due to the Schawlow-Townes fundamental thermal noise limit.

  3. Growth and characterization of VO{sub 2}/p-GaN/sapphire heterostructure with phase transition properties

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Jiming, E-mail: jmbian@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China); Wang, Minhuan; Miao, Lihua; Li, Xiaoxuan; Luo, Yingmin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhang, Dong [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); New Energy Source Research Center of Shenyang Institute of Engineering, Shenyang 110136 (China); Zhang, Yuzhi [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China)

    2015-12-01

    Highlights: • VO{sub 2} films were deposited on p-GaN/sapphire substrates by PLD. • A well-defined VO{sub 2}/p-GaN/sapphire interface was observed. • The valence state of V in VO{sub 2} films was confirmed by XPS analyses. • A distinct reversible SMT phase transition behavior was observed. - Abstract: High quality pure phase VO{sub 2} films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO{sub 2}/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}, no other valence state of V was detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) phase transition with resistance change up to nearly three orders of magnitude was observed in the temperature dependent electrical resistance measurement, which was comparable to the high quality VO{sub 2} film grown directly on sapphire substrates. Our present findings will give a deeper insight into the physical mechanism behind the exotic characteristics of VO{sub 2}/p-GaN heterostructure, and further motivate research in novel devices with combined functional properties of both correlated oxide and wide bandgap nitride semiconductors.

  4. Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

  5. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  6. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  7. Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    WANG Gui-gen; ZHANG Ming-fu; ZUO Hong-bo; HE Xiao-dong; HAN Jie-cai

    2006-01-01

    The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.

  8. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  9. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  10. Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center (SAPMAC) method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.

  11. Room Temperature Experiments with a Macroscopic Sapphire Mechanical Oscillator

    Science.gov (United States)

    Bourhill, Jeremy; Ivanov, Eugene; Tobar, Micahel

    2015-03-01

    We present initial results from a number of experiments conducted on a 0.53 kg sapphire ``dumbbell'' crystal. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects frequency modulate resonant microwave whispering gallery modes, simultaneously excited within the crystal. A novel microwave readout system is described allowing extremely low noise measurements of this frequency modulation with a phase noise floor of -160 dBc/Hz at 100 kHz, near our modes of interest. Fine-tuning of the crystal's suspension have allowed for the optimisation of mechanical Q-factors in preparation for cryogenic experiments, with a value of 8 x 107 achieved so far. Finally, results are presented that demonstrate the excitation of mechanical modes via radiation pressure force. These are all important steps towards the overall goal of the experiment; to cool a macroscopic device to the quantum ground state.

  12. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    Science.gov (United States)

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10(5) Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ1, τ2 and τ3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ1, τ2 and τ3 of 0.10, 0.73 and 4.02 min, respectively).

  13. Characteristics of effective health and safety committees: survey results.

    Science.gov (United States)

    Morse, Tim; Bracker, Anne; Warren, Nicholas; Goyzueta, Jeanette; Cook, Matthew

    2013-02-01

    Although perhaps the most common worker-management structure, there has been surprisingly little research on describing and evaluating the characteristics of health and safety committees. A survey of 380 health and safety committee members from 176 manufacturing workplaces was supplemented with administrative data and compared with reported workers' compensation rates. Survey respondents also reported perceptions of overall safety, committee, effectiveness, committee activities, and "best practices." Extensive descriptive data is presented, including a mean of 8.7 members per committee spending 1,167 hr per year on committee business for an estimate of $40,500 worth of time per committee. Higher speed to correct action items, a focus on ergonomics, and planning for safety training was associated with lower injury rates. The discrepancy between managers and hourly committee members in estimating overall safety was strongly positively associated with injury rates. Communications and worker involvement may be important to address discrepancy issues. Prospective studies are needed to distinguish directionality of associations. Copyright © 2012 Wiley Periodicals, Inc.

  14. Growth and Characterization of InN Thin Films on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    XIE Zi-Li; ZHANG Rong; XIU Xiang-Qian; LIU Bin; LI Liang; HAN Ping; GU Shu-Lin; SHI Yi; ZHENG You-Dou

    2007-01-01

    Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition(MOCVD).By employing three-step layer buffers,the mirror-like layers on two-inch sapphire wafers have been obtained.The structural,optical and electrical characteristics of InN are investigated by x-ray diffraction,scanning electron microscopy,atomic force microscopy,photoluminescence and infrared optical absorpton.The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70 eV at room temperature.The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm2/Vs,and 3.9×1018cm-3,respectively.

  15. Effect of Propellant Combustion on Sapphire

    Directory of Open Access Journals (Sweden)

    Mark L. Bundy

    2000-10-01

    Full Text Available Sapphire (Al2O3 is the window material of choice for laser beam transmission into the combustion chamber of laser-ignited guns. To evaluate the long-term effects of propellant combustion on an Al/sub 2/O/sub 3/ laser window, it is important to know the window temperature during firing. This paper presents temperature data on an Al/sub 2/O/sub 3/ sample located in the breech face of the gun where the laser window would be in a laser-ignited 155 mm(M199 cannon. Al/sub 2/O/sub 3/ sample is a substrate material of a commercially sold thin-film thermocouple, and is therefore thermally, if not optically, representative of an actual Al/sub 2/O/sub 3/ laser window.

  16. Ruby and sapphire from Jegdalek, Afghanistan

    Science.gov (United States)

    Bowersox, G.W.; Foord, E.E.; Laurs, B.M.; Shigley, J.E.; Smith, C.P.

    2000-01-01

    This study provides detailed mining and gemological information on the Jegdalek deposit, in east-central Afghanistan, which is hosted by elongate beds of corundum-bearing marble. Some facet-grade ruby has been recovered, but most of the material consists of semitransparent pink sapphire of cabochon or carving quality. The most common internal features are dense concentrations of healed and nonhealed fracture planes and lamellar twin planes. Color zoning is common, and calcite, apatite, zircon, mica, iron sulfide minerals, graphite, rutile, aluminum hydroxide, and other minerals are also present in some samples. Although the reserves appear to be large, future potential will depend on the establishment of a stable government and the introduction of modern mining and exploration techniques. ?? 2000 Gemological Institute of America.

  17. High Power Widely Tunable Narrow Linewidth All-Solid-State Pulsed Titanium-Doped Sapphire Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; LI Xue; SHENG Quan; SHI Chun-Peng; YIN Su-Jia; LI Bin; YU Xuan-Yi; WEN Wu-Qi; YAO Jian-Quan

    2011-01-01

    We report a widely tunable, narrow linewidth, pulsed Ti:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser. By using four dense Bint glass prisms as intra-cavity dispersive elements, the output wavelength can be continuously tuned over 675-970 nm and the spectral linewidth is shortened to 0.5nm. The maximum output power of 6.65 W at 780 nm is obtained under 23.4 Wpump power with repetition rate of 5.5 kHz; corresponding to an conversion efficiency of 28.4%. Due to the gain-switching characteristics of the Ti:sapphire laser, the output pulse duration is as short as 17.6ns.%@@ We report a widely tunable,narrow linewidth,pulsed Th:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser.By using four dense flint glass prisms as intra-cavity dispersive elements,the output wavelength can be continuously tuned over 675-970nm and the spectral linewidth is shortened to 0.5 nm.The maximum output power of 6.65 W at 780 run is obtained under 23.4 W pump power with repetition rate of 5.5 kHz,corresponding to an conversion efficiency of 28.4%.Due to the gain-switching characteristics of the Ti:sapphire laser,the output pulse duration is as short as 17.6ns.

  18. Synthesis of titanium sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1998-06-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al{sub 2}O{sub 3}) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al{sub 2}O{sub 3} waveguide laser. The implantation of Ti and O ions into c-axis oriented {alpha}-Al{sub 2}O{sub 3} followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti{sup 3+} ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of {approx} .6 to .9 {mu}m, similar to that expected from Ti{sup 3+}. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al{sub 2O}3 waveguide. (authors). 8 refs., 3 figs.

  19. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  20. High School Staff Characteristics and Mathematics Test Results

    Directory of Open Access Journals (Sweden)

    Mark Fetler

    1999-03-01

    Full Text Available This study investigates the relationship between measures of mathematics teacher skill and student achievement in California high schools. Test scores are analyzed in relation to teacher experience and education and student demographics. The results are consistent with the hypotheses that there is a shortage of qualified mathematics teachers in California and that this shortage is associated with low student scores in mathematics. After controlling for poverty, teacher experience and preparation significantly predict test scores. Short-term strategies to increase the supply of qualified mathematics teachers could include staff development, and recruitment incentives. A long-term strategy addressing root causes of the shortage requires more emphasis on mathematics in high school and undergraduate programs.

  1. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    CERN Document Server

    Karacheban, O; Hempel, M; Henschel, H; Lange, W; Leonard, J L; Levy, I; Lohmann, W; Schuwalow, S

    2015-01-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitoring systems at the Large Hadron Collider, FLASH or XFEL. Artificial diamond sensors are currently widely used as sensors in these systems. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm^2 size and 525 micrometer thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the dete...

  2. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  3. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  4. Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Lipski, Frank; Roesch, Rudolf; Scholz, Ferdinand [Institute of Optoelectronics, University of Ulm (Germany)

    2010-07-01

    We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution X-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400 arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.

  5. Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

    Science.gov (United States)

    Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo

    2017-09-01

    The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.

  6. Neutron Transmission through Sapphire Crystals: Experiments and Simulations

    OpenAIRE

    Rantsiou, Emmanouela; Filges, Uwe; Panzner, Tobias; Klinkby, Esben Bryndt

    2013-01-01

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Thosesimulations were part of the effort of validating and improving the newly developed interface between...

  7. Defects creation in sapphire by swift heavy ions: A fluence depending process

    Energy Technology Data Exchange (ETDEWEB)

    Kabir, A. [LRPCSI, Universite 20 Aout 55, BP 26, Route d' El-Hadaiek, Skikda (Algeria)], E-mail: a.nour_kabir@yahoo.fr; Meftah, A. [LRPCSI, Universite 20 Aout 55, BP 26, Route d' El-Hadaiek, Skikda (Algeria); Stoquert, J.P. [InESS, 23, rue du Loess - BP 20 CR - F-67037 Strasbourg Cedex 02 (France); Toulemonde, M.; Monnet, I. [CIMAP, BP 5133, 14070 Caen Cedex 05 (France)

    2009-03-15

    Single crystals of sapphire ({alpha}-Al{sub 2}O{sub 3}) were irradiated at GANIL with 0.7 MeV/amu xenon ions corresponding to an electronic stopping power of 21 keV/nm. Several fluences were applied between 5 x 10{sup 11} and 2 x 10{sup 14} ions/cm{sup 2}. Irradiated samples were characterized using optical absorption spectroscopy. This technique exhibited the characteristic bands associated with F and F{sup +} centers defects. The F centers density was found to increase with the fluence following two different kinetics: a rapid increase for fluences less than 10{sup 13} ions/cm{sup 2} and then, a slow increase for higher fluences. For fluences less than 10{sup 13} ions/cm{sup 2}, results are in good agreement with those obtained by Canut et al. [B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thevenard, M. Toulemonde, Phys. Rev. B 51 (1995) 12194]. In the fluences range: 10{sup 13}-10{sup 14} ions/cm{sup 2}, the F centers defects creation process is found to be different from the one evidenced for fluences less than 10{sup 13} ions/cm{sup 2}.

  8. Defects creation in sapphire by swift heavy ions: A fluence depending process

    Science.gov (United States)

    Kabir, A.; Meftah, A.; Stoquert, J. P.; Toulemonde, M.; Monnet, I.

    2009-03-01

    Single crystals of sapphire (α-Al 2O 3) were irradiated at GANIL with 0.7 MeV/amu xenon ions corresponding to an electronic stopping power of 21 keV/nm. Several fluences were applied between 5 × 10 11 and 2 × 10 14 ions/cm 2. Irradiated samples were characterized using optical absorption spectroscopy. This technique exhibited the characteristic bands associated with F and F + centers defects. The F centers density was found to increase with the fluence following two different kinetics: a rapid increase for fluences less than 10 13 ions/cm 2 and then, a slow increase for higher fluences. For fluences less than 10 13 ions/cm 2, results are in good agreement with those obtained by Canut et al. [B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thévenard, M. Toulemonde, Phys. Rev. B 51 (1995) 12194]. In the fluences range: 10 13-10 14 ions/cm 2, the F centers defects creation process is found to be different from the one evidenced for fluences less than 10 13 ions/cm 2.

  9. Achieving strong doubling power by optical phase-locked Ti:sapphire laser and MOPA system

    Institute of Scientific and Technical Information of China (English)

    Yu Peng; Baike Lin; Qiang Wang; Yang Zhao; Ye Li; Jianping Cao; Zhanjun Fang; Erjun Zang

    2012-01-01

    We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal,whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods.The outputs of second-harmonic generation reach 310 mW,54.8% of the conversion efficiency from the Ti;sapphire laser with the crystal length of 10 mm,and 208 mW,59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm.It consists of heterodyning the Ti;sapphire laser and the MOPA system,and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator.The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti;sapphire laser to lock the two lasers in phase.A stable blue power of 520 mW is obtained,which supplies enough power for the cooling and trapping step of the strontium (Sr) optical lattice clock.Four stable isotopes of Sr,84Sr,86Sr,87Sr,and 88Sr,are detected by probing the laser during a strong 460.7-nm cycling transition (5s21S0-5s5p1P1).%We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal, whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods. The outputs of second-harmonic generation reach 310 mW, 54.8% of the conversion efficiency from the Ti:sapphire laser with the crystal length of 10 mm, and 208 mW, 59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm. It consists of heterodyning the Ti:sapphire laser and the MOPA system, and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator. The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti:sapphire laser to lock the two lasers in phase. A stable blue power of 520 mW is obtained, which supplies enough power for the cooling

  10. Ti : sapphire laser synchronised with femtosecond Yb pump laser via nonlinear pulse coupling in Ti : sapphire active medium

    Science.gov (United States)

    Didenko, N. V.; Konyashchenko, A. V.; Konyashchenko, D. A.; Kostryukov, P. V.; Kuritsyn, I. I.; Lutsenko, A. P.; Mavritskiy, A. O.

    2017-02-01

    A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb3+-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model.

  11. Antibody-forming cells and serum hemolysin responses of pastel and sapphire mink inoculated with Aleutian disease virus.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J

    1973-11-01

    The effect of Aleutian disease virus (ADV) on serum hemolysin titers and antibody-forming cells in lymph nodes and spleens of sapphire and pastel mink inoculated with goat erythrocytes (G-RBC) was investigated. ADV injected 1 day after primary antigenic stimulation with G-RBC did not depress the immune responses of either color phase for a period of 26 days. However, when G-RBC were injected 47 days after ADV, both the number of antibody-forming cells and hemolysin titers were more markedly depressed in sapphire than in pastel mink. The results are discussed in relation to the greater susceptibility of sapphire mink and the variable susceptibility of pastel mink to the Pullman isolate of ADV.

  12. Rayleigh scattering in sapphire test mass for laser interferometric gravitational-wave detectors:. II: Rayleigh scattering induced noise in a laser interferometric-wave detector

    Science.gov (United States)

    Benabid, F.; Notcutt, M.; Ju, L.; Blair, D. G.

    1999-10-01

    We present the level of noise induced by Rayleigh-scattered light from sapphire test mass, the limit of scattering loss on build-up power inside the interferometer and finally the tolerable absorption loss in order to meet the specification of the interferometer sensitivity. The results show that the Rayleigh scattering induced noise remains below h˜10 -25 Hz -1/2 and a higher tolerance on the absorption level in sapphire substrate compared with silica substrate.

  13. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  14. Process for the Φ130 sapphire window element with long distance and high resolution

    Science.gov (United States)

    Xu, Zengqi; Su, Ying; Lei, Jianli; Guo, Rui; Zhang, Feng; Guo, Xinlong; Liu, Xuanmin; Sun, Taohui

    2016-10-01

    With the process test for the choice of materials, the test materials and the molds, the abrasives, the temperature and the different machining process monitoring parameters of the polishing machine, the process method and the quality control technology were figured out for the Φ130 sapphire window element with long distance and high resolution (hereinafter referred to as window element), meantime, the optimum process condition was determined to machine the element. The results were that the high resolution imaging window was processed with the surface roughness Ra of 0.639nm, the transmission distortion of λ/10 (λ=632.8nm), the parallel error of 5″, the resolution of 1.47″ and the focal length of 5 km, which can satisfy the imaging requirements better for the military photoelectric device for sapphire window with long distance and high resolution.

  15. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  16. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  17. Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Tang Jun; Kang Chao-Yang; Li Li-Min; Liu Zhong-Liang; Yan Wen-Sheng; Wei Shi-Qiang; Xu Peng-Shou

    2012-01-01

    A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy(SSMBE)equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction(RHEED),X-ray diffractionφ scans,Raman spectroscopy,and near edge X-ray absorption fine structure(NEXAFS)spectroscopy.The results of the RHEED and φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 mm.

  18. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  19. Evolution of the sapphire industry: Rubicon Technology and Gavish

    Science.gov (United States)

    Harris, Daniel C.

    2009-05-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

  20. Analysis of tunable picosecond pulse generation from a distributed feedback Ti:sapphire laser

    Institute of Scientific and Technical Information of China (English)

    Hong Zhi; Yao Xiao-Ke

    2004-01-01

    A distributed feedback Ti:sapphire laser (DFTL) pumped by a 532nm Q-switched pulse is proposed for the generation of tunable picosecond pulses. With coupled rate equation model, the temporal characteristics of DFTL are obtained. The numerical solutions show that the DFTL pulse with a 50-ps pulse duration and as much as 3.SmJ pulse energy can be obtained under 40-m J, 5-ns pulse pumping. The dependence of output pulse width on the laser crystal's length, pumping pulse duration, and pumping rate is also discussed in detail.

  1. Scaling STI's sapphire cryocooler for applications requiring higher heat loads

    Science.gov (United States)

    Karandikar, Abhijit; Fiedler, Andreas

    2012-06-01

    Superconductor Technologies Inc. (STI) developed the Sapphire cryocooler specifically for the SuperLink® product; a high performance superconducting Radio Frequency (RF) front-end receiver used by wireless carriers such as Verizon Wireless and AT&T to improve network cell coverage and data speeds. STI has built and deployed over 6,000 systems operating 24 hours a day (24/7), 7 days a week in the field since 1999. Sapphire is an integrated free piston Stirling cycle cryocooler with a cooling capacity of 5 Watts at 77 Kelvin (K) with less than 100 Watts (W) input power. It has a field-proven Mean Time Between Failure (MTBF) of well over 1 million hours, requires zero maintenance and has logged over 250 million cumulative runtime hours. The Sapphire cooler is built on a scalable technology platform, enabling the design of machines with cooling capacities greater than 1 kilowatt (kW). This scalable platform also extends the same outstanding attributes as the Sapphire cooler, namely high reliability, zero maintenance, and compact size - all at a competitive cost. This paper will discuss emerging applications requiring higher heat loads and these attributes, describe Sapphire, and show a preliminary concept of a scaled machine with a 100 W cooling capacity.

  2. Layered MoS{sub 2} grown on c-sapphire by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Yen-Teng; Ma, Chun-Hao; Luong, Tien-Tung; Wei, Lin-Lung; Yen, Tzu-Chun; Chu, Yung-Ching; Tu, Yung-Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Hsu, Wei-Ting; Chang, Wen-Hao [Department of Electrophysics, National Chiao Tung University, Hsinchu (China); Pande, Krishna Prasad [Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu (China); Chang, Edward Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu (China)

    2015-03-01

    Layered growth of molybdenum disulphide (MoS{sub 2}) was successfully achieved by pulsed laser deposition (PLD) method on c -plane sapphire substrate. Growth of monolayer to a few monolayer MoS{sub 2}, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A{sub 1g}-E{sup 1}{sub 2g}) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm{sup -1}, suggesting a monolayer MoS{sub 2} was obtained. Two-dimensional (2D) layer growth of MoS{sub 2} is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002)MoS{sub 2} and [2 anti 1 anti 10] sapphire//[0 anti 1 anti 10]MoS{sub 2} is determined. The results imply that PLD is suitable for layered MoS{sub 2} growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS{sub 2}, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  4. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    Science.gov (United States)

    Sun, Haiding; Wu, Feng; tahtamouni, T. M. Al; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-10-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0 0 0 1) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  5. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  6. Laser surface and subsurface modification of sapphire using femtosecond pulses

    Energy Technology Data Exchange (ETDEWEB)

    Eberle, G., E-mail: eberle@iwf.mavt.ethz.ch [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Schmidt, M. [Chair of Photonic Technologies, University of Erlangen-Nuremberg, Konrad-Zuse-Strasse 3-5, 91052 Erlangen (Germany); Pude, F. [Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland); Wegener, K. [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland)

    2016-08-15

    Highlights: • Single and multipulse ablation threshold of aluminium oxide is determined. • Laser ablation, and in-volume modification followed by wet etching are demonstrated. • Quality following laser processing and laser-material interactions are studied. - Abstract: Two methods to process sapphire using femtosecond laser pulses are demonstrated, namely ablation (surface), and in-volume laser modification followed by wet etching (subsurface). Firstly, the single and multipulse ablation threshold is determined and compared with previous literature results. A unique application of ablation is demonstrated by modifying the entrance aperture of water jet orifices. Laser ablation exhibits advantages in terms of geometric flexibility and resolution, however, defects in the form of edge outbreaks and poor surface quality are evident. Secondly, the role of material transformation, polarisation state and formation of multi-focus structures after in-volume laser modification is investigated in order to explain their influence during the wet etching process. Laser scanning and electron microscopy as well as electron backscatter diffraction measurements supported by ion beam polishing are used to better understand quality and laser-material interactions of the two demonstrated methods of processing.

  7. Local dielectric permittivity profiles of sapphire/polypropylene interfaces

    Science.gov (United States)

    Yu, Liping; Ranjan, V.; Buongiorno Nardelli, M.; Bernholc, J.

    2009-03-01

    Recently, the need for high-power-density capacitors has stimulated research to develop composite dielectric materials with high-k nanoparticles embedded in a polymer matrix. In these materials, surfaces and interfaces may play an important role in determining the overall dielectric properties. We present first-principles investigations of the dielectric permittivity profiles across slabs and interfaces of sapphire(α-Al2O3)/isotactic-polypropylene(iPP). Our results indicate that the permittivity profile at interface strongly depends on the nanoscale averaging procedure. We propose an averaging model that ensures near-locality of the dielectric function. We find that: (i) the dielectric permittivity approaches the corresponding bulk value just a few atomic layers away from the interface or surface; (ii) the dielectric constant is enhanced at the surfaces of the isolated α-Al2O3 slabs, while no enhancement is observed at the iPP slab surfaces; and (iii) the dielectric transition at the αAl2O3/iPP is mainly confined in the αAl2O3 side.

  8. Blocks and residual stresses in shaped sapphire single crystals

    Science.gov (United States)

    Krymov, V. M.; Nosov, Yu. G.; Bakholdin, S. I.; Maslov, V. N.; Shul‧pina, I. L.; Nikolaev, V. I.

    2017-01-01

    The formation of blocks and residual stresses in shaped sapphire crystals grown from the melt by the Stepanov method (EFG) has been studied. The probability of block formation is higher for the growth along the c axis compared to that grown in the a-axis direction. The distribution of residual stress in sapphire crystals of tubular, rectangular and round cross section was measured by the conoscopy method. It was found that the magnitude of the residual stress increases from the center to the periphery of the crystal and reaches up to about 20 MPa. Residual stress tensor components for solid round rod and tubular single crystals were determined by numerical integration.

  9. Inversion domains in AlN grown on (0001) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  10. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  11. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study

    Science.gov (United States)

    Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-01-01

    Introduction Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. Aim The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Materials and Methods Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. Results The light absorption values obtained from spectrofluorometeric study were 3300000–3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000–6500000 cps for Group 2

  12. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-04-01

    This report summarizes technical progress over the first six months of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on analyzing and testing factors that impact performance degradation of the initially designed sensor prototype, including sensing element movement within the sensing probe and optical signal quality degradation. Based these results, a new version of the sensing system was designed by combining the sapphire disk sensing element and the single crystal zirconia right angle light reflector into one novel single crystal sapphire right angle prism. The new sensor prototype was tested up to 1650 C.

  13. The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

    Science.gov (United States)

    Huang, Jen-Ching; Weng, Yung-Jin

    2014-01-01

    This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model.

  14. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

    Science.gov (United States)

    Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-08-01

    Group 3 (sapphire ceramic brackets) i.e., Group 2 showed the highest light absorption and the least translucency followed by groups 1 and 3. Shear bond strength results were 2.4 mpa, 1.9 mpa and 3.6 mpa for groups 1,2 and 3 respectively. Superior shear bond strength was recorded in group 3 (sapphire ceramic brackets). ARI results showed that group 3 had increased bond between bracket adhesive interfaces when compared to the other 2 groups. From this study, it has been concluded that sapphire ceramic brackets (Group 3) was superior in translucency and shear bond strength followed by monocrystalline and polycrystalline ceramic brackets.

  15. Structure of shaped sapphire grown from multicapillary dies

    Science.gov (United States)

    Dobrovinskaya, E. R.; Litvinov, L. A.; Pischik, V. V.

    1990-07-01

    Peculiarities in grain structure development have been studied in sapphire crystals grown with multicapillary channels in the die to feed melt to the crystallization zone. A new mechanism of grain boundary formation based on gas-bubble collapse at the crystal-melt interface is proposed.

  16. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison t

  17. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  18. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    Science.gov (United States)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-03-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

  19. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials

    Science.gov (United States)

    2005-08-24

    the Cr in sapphire could also permit the construction of white light LEDs . Ultimately, an integrated III-V Nitride optical pump for Ti:Sapphire could...substrates by MOCVD. 2. Characterization of doped sapphire/ InGaN structures byPL to simulate electrical injection by laser or LED device structures Part 2 1...Cr:sapphire substrate. Solid line is the spectrum of blue and red light emitted by InGaN LED epitaxially grown on Cr:sapphire substrate. The light was collected

  20. Statistical evaluation of characteristic SDDLV-induced stress resultants to discriminate between undamaged and damaged elements

    DEFF Research Database (Denmark)

    Hansen, Lasse Majgaard; Johansen, Rasmus Johan; Ulriksen, Martin Dalgaard

    2015-01-01

    evaluation of the characteristic stress resultants, hence facilitating general discrimination between damaged and undamaged elements. The three detection methods in question enable outlier analysis on the basis of, respectively, Euclidian distance, Hotelling’s statistics, and Mahalanobis distance. The study...

  1. 蓝宝石晶体的双面研磨加工%Dual-lapping process for sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    文东辉; 洪滔; 张克华; 鲁聪达

    2009-01-01

    In order to achieve high efficiency and low damaged layers during a sapphire crystal lapping process,an experimental research on the rougness,lapping uniformity and sub-surface damaged layer were studied in this paper.The sapphire with (0001) orientation was lapped by 280 mesh boron carbide abrasive grits.The effects of lapping time on the material removal rates and surface roughness were investigated,and the processing remainders by the dual-lapping were determined in accordance with the surface states of the sapphire.Then micro-surface uniformity of the sapphire was also presented by using WYKO laser equipment.Finally,a nano-indentation test was carried out to measure the depth of damaged layer according to the hardness or modulus variances.Experimental results show that the sapphire crystal can offer the R,in 0.523 μm,R,<6.0 μm,the depth of heavy damaged layer of 460 nm,and the depth of sub-surface damaged layer no more than 1 μm,after it is lapped by the abrasive with 280 mesh boron carbide grits in 120 min.%为了实现对蓝宝石晶体的高效低损伤研磨加工,对蓝宝石晶体的双面研磨加工表面粗糙度、研磨均匀性和亚表面损伤层的深度进行实验研究.采用280min的双面研磨加工后可以获得Ra为0.523 μm,Rt<6.0 μm的表面;其深度损伤层约为460 nm,亚表面损伤层<1 μm.

  2. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    Science.gov (United States)

    Karacheban, O.; Afanaciev, K.; Hempel, M.; Henschel, H.; Lange, W.; Leonard, J. L.; Levy, I.; Lohmann, W.; Schuwalow, S.

    2015-08-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitors at the Large Hadron Collider, FLASH or XFEL. Currently artificial diamond sensors are widely used. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm2 size and 525 μ m thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the detector was studied in a 5 GeV electron beam. The charge collection efficiency measured as a function of the bias voltage rises with the voltage, reaching about 10% at 095 V. The signal size obtained from electrons crossing the stack at this voltage is about 02200 e, where e is the unit charge. The signal size is measured as a function of the hit position, showing variations of up to 20% in the direction perpendicular to the beam and to the electric field. The measurement of the signal size as a function of the coordinate parallel to the electric field confirms the prediction that mainly electrons contribute to the signal. Also evidence for the presence of a polarisation field was observed.

  3. Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

    Science.gov (United States)

    Freeman, Jon C.; Mueller, Wolfgang

    2008-01-01

    Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

  4. Characteristics of genomic test consumers who spontaneously share results with their health care provider.

    Science.gov (United States)

    Darst, Burcu F; Madlensky, Lisa; Schork, Nicholas J; Topol, Eric J; Bloss, Cinnamon S

    2014-01-01

    The purpose of this study was to evaluate the characteristics of direct-to-consumer (DTC) genomic test consumers who spontaneously shared their test results with their health care provider. Utilizing data from the Scripps Genomic Health Initiative, we compared demographic, behavioral, and attitudinal characteristics of DTC genomic test consumers who shared their results with their physician or health care provider versus those who did not share. We also compared genomic risk estimates between the two groups. Of 2,024 individuals assessed at approximately 6 months post testing, 540 individuals (26.5%) reported sharing their results with their physician or health care provider. Those who shared were older (p consumers.

  5. All solid-state, injection-seeded Ti: sapphire ring laser

    Institute of Scientific and Technical Information of China (English)

    Ting Yu; Weibiao Chen; Jun Zhou; Jinzi Bi; Junwen Cui

    2005-01-01

    @@ In this letter, we present an all solid-state, injection-seeded Ti:sapphire laser. The laser is pumped by a laser diode pumped frequency-doubled Nd:YAG laser, and injection-seeded by an external cavity laser diode with the wavelength between 770 and 780 nm. The single longitude mode and the doubling efficiency of the laser are obtained after injection seeding. The experimental setup and relative results are reported.It is a good candidate laser source for mobile differential absorption lidar (DIAL) system.

  6. Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions

    Science.gov (United States)

    Creighton, J. Randall; Coltrin, Michael E.; Figiel, Jeffrey J.

    2017-04-01

    Growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measurements are very difficult because of substrate transparency in the near-IR ( 900 nm) where conventional pyrometers detect radiation. The transparency problem can be solved by using a mid-IR pyrometer operating at a wavelength ( 7500 nm) where sapphire is opaque. We employ a mid-IR pyrometer to measure the sapphire wafer temperature and simultaneously a near-IR pyrometer to measure wafer pocket temperature, while varying reactor pressure in both a N2 and H2 ambient. Near 1300 °C, as the reactor pressure is lowered from 300 Torr to 10 Torr the wafer temperature drops dramatically, and the ∆T between the pocket and wafer increases from 20 °C to 250 °C. Without the mid-IR pyrometer the large wafer temperature change with pressure would not have been noted. In order to explain this behavior we have developed a quasi-2D thermal model that includes a proper accounting of the pressure-dependent thermal contact resistance, and also accounts for sapphire optical transmission. The model and experimental results demonstrate that at most growth conditions the majority of the heat is transported from the wafer pocket to the wafer via gas conduction, in the free molecular flow limit. In this limit gas conductivity is independent of gap size but first order in pressure, and can quantitatively explain results from 20 to 300 Torr. Further analysis yields a measure of the thermal accommodation coefficients; α(H2) =0.23, α(N2) =0.50, which are in the range typically measured.

  7. Microstructure characterization and optical properties of sapphire after helium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Mian; Yang, Liang [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Shen, Huahai [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Wei [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xiang, Xia, E-mail: xiaxiang@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Wanguo, E-mail: wgzheng_caep@sina.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Guo, Decheng [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Huang, Jin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, Kai [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Yuan, Xiaodong, E-mail: yxd66my@163.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-06-15

    The (0 0 0 1) sapphire samples are irradiated with 60 keV helium ions at the fluences of 5 × 10{sup 16}, 1 × 10{sup 17}and 5 × 10{sup 17} ions/cm{sup 2} at room temperature. After implantation, two broad absorption bands at 320–460 and 480–700 nm are observed and their intensities increase with the increasing ion fluence. The grazing incidence X-ray diffraction results indicate that the {0 0 0 1} diffraction peaks of sapphire decrease and broaden due to the disorientation of the generated crystallites after ion irradiation. The microstructure evolution is examined by the scanning and transmission electron microscopes. The surface becomes rough because of the aggregation of helium bubbles and migration towards the surface. There is a lattice expansion up to ∼4.5% in the implanted area and the lattice distortion measured from dispersion of (1 1 0) diffraction is ∼4.6°. Such strain of crystal lattice is rather large and leads to contrast fluctuation at scale of 1–2 nm (the bubble size). The laser induced damage threshold (LIDT) is investigated to understand the effect of helium ion beam irradiation on the laser damage resistance of sapphire components and the results show that the LIDT decreases from 5.4 to 2.5 J/cm{sup 2} due to the absorptive color centers, helium bubbles and defects induced by helium ion implantation. The laser damage morphologies of samples before and after ion implantation are also presented.

  8. A GRASP for Next Generation Sapphire Image Acquisition Scheduling

    Directory of Open Access Journals (Sweden)

    Yang Wang

    2016-01-01

    Full Text Available This paper investigates an image acquisition scheduling problem for a Canadian surveillance-of-space satellite named Sapphire that takes images of deep space Earth-orbiting objects. For a set of resident space objects (RSOs that needs to be imaged within the time horizon of one day, the Sapphire image acquisition scheduling (SIAS problem is to find a schedule that maximizes the “Figure of Merit” of all the scheduled RSO images. To address the problem, we propose an effective GRASP heuristic that alternates between a randomized greedy constructive procedure and a local search procedure. Experimental comparisons with the currently used greedy algorithm are presented to demonstrate the merit of the proposed algorithm in handling the SIAS problem.

  9. AlN growth on sapphire substrate by ammonia MBE

    Science.gov (United States)

    Mansurov, V. G.; Nikitin, A. Yu.; Galitsyn, Yu. G.; Svitasheva, S. N.; Zhuravlev, K. S.; Osvath, Z.; Dobos, L.; Horvath, Z. E.; Pecz, B.

    2007-03-01

    Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are investigated. Surface morphology evolution during AlN growth is studied in situ by reflection high energy electron diffraction and ex situ by atomic force microscopy. It is found that the surfaces of AlN layers thicker than 100 nm have two major features: a quite smooth background and noticeable amount of hillocks. The influence of growth conditions on the AlN surface morphology is studied in order to find a way for reducing of the hillocks density. A modification of nitridated sapphire surface by small amount of Al (1-2 monolayers) with subsequent treatment of the surface under ammonia flux is proposed. An improvement of AlN surface morphology of the layers grown on the modified surfaces is demonstrated.

  10. Measurements of prompt radiation induced conductivity of alumina and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Hartman, E. Frederick [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Zarick, Thomas Andrew [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sheridan, Timothy J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Preston, Eric F. [ITT Coporation, Colorado Springs, CO (United States)

    2011-04-01

    We performed measurements of the prompt radiation induced conductivity in thin samples of Alumina and Sapphire at the Little Mountain Medusa LINAC facility in Ogden, UT. Five mil thick samples were irradiated with pulses of 20 MeV electrons, yielding dose rates of 1E7 to 1E9 rad/s. We applied variable potentials up to 1 kV across the samples and measured the prompt conduction current. Analysis rendered prompt conductivity coefficients between 1E10 and 1E9 mho/m/(rad/s), depending on the dose rate and the pulse width for Alumina and 1E7 to 6E7 mho/m/(rad/s) for Sapphire.

  11. Color Enhancement by Diffusion of Beryllium in Dark Blue Sapphire

    Institute of Scientific and Technical Information of China (English)

    Kyungj in Kim; Yongkil Ahn

    2016-01-01

    Diffusion of beryllium was performed on dark blue sapphire from China and Australia.The samples were heated with beryllium as a dopant in a furnace at 1 600 ℃ for 42 h in air.After beryllium diffusion,sam-ples were analyzed by UV-Vis,FTIR,and WD-XRF spectroscopy.After heat-treatment with Be as a catalyst, the irons of the ferrous state were changed to the ferric state.Therefore,reaction of Fe2+/Ti4+ IVCT was de-creased.The absorption peaks at 3 309 cm-1 attributed to OH radical were disappeared completely due to carry out heat treatment.Consequently,the intensity of absorption band was decreased in the visible region.Espe-cially,decreased absorption band in the vicinity of 570 nm was responsible for the lighter blue color.There-fore,we confirmed that the dark blue sapphires from China and Australia were changed to vivid blue.

  12. Effect of Ti:Sapphire-femtosecond laser on the surface roughness of ceramics.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-12-01

    Some of these adult patients have ceramic crowns, to which orthodontists have concerns about bonding brackets. The aim of the present study was to evaluate the effect of a Ti:Sapphire femtosecond (fs) laser (Integra-C-3.5, Quantronix, NY) on the surface roughness of two ceramic surfaces (feldspathic and IPS Empress e-Max) and to compare results with those of two other lasers (Er:YAG and Nd:YAG) and conventional techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. Ceramic discs were fabricated (n = 150) and divided into two groups, each of which was then divided into five subgroups prepared with Ti:Sapphire fs, Nd:YAG, or Er:YAG lasers, sandblasting, or HF acid (n = 15). The surface roughness of the ceramic discs was evaluated using a profilometer (Mitotoyo Surf Test SJ 201 P/M; Mitutoyo Corp, Japan) before and after each surface treatment. Three traces were recorded for each specimen at three different locations in each direction, providing nine measurements per sample, which were then averaged to obtain the surface roughness value. Data were analyzed using the Wilcoxon signed-rank test (P laser was associated with the highest mean roughness value. AFM images of the ceramic surfaces treated confirmed that the fs-laser-treated surfaces had the highest degree of irregularity. Within the limitations of this in vitro study, the Ti:Sapphire fs laser yielded the highest surface roughness and could be an alternative ceramic surface treatment to increase bond strength. © 2015 Wiley Periodicals, Inc.

  13. Route to 100 TW Ti: Sapphire laser at repetitive mode

    Directory of Open Access Journals (Sweden)

    Teng Hao

    2013-11-01

    Full Text Available We demonstrated a 100 TW-class femtosecond Ti: sapphire laser running at repetition rate of 0.1 Hz by adding a stage amplifier in the 20 TW/10 Hz laser facility (XL-II. Pumping the new stage amplifier with the 25 J green Nd:glass laser, we successfully upgraded the laser energy to 3.4 J with duration of 29 fs, corresponding to a peak power of 117 TW.

  14. Evidence of colour-modification induced charge and structural disorder in natural corundum: Spectroscopic studies of beryllium treated sapphires and rubies

    Science.gov (United States)

    Sastry, M. D.; Mane, Sandesh N.; Gaonkar, Mahesh P.; Bagla, H.; Panjikar, J.; Ramachandran, K. T.

    2009-07-01

    Corundum α - Al2O3 single crystals is an important gemstone known by different names depending on the colour it exhibits which in turn depends on the impurities that are present. The colour depends on the valence state of the impurity element present in corundum (Cr3+ in ruby, Fe3+ in yellow sapphire and Fe-Ti complex in blue sapphire). There have been a number of reports of diffusion controlled high temperature chemical reactions to influence the colouration in these materials. Present paper deals with the Raman and FT-IR results on Be treated rubies/sapphires and gives evidence of the disorder brought about by such treatments. This can be effectively used for diagnostic purposes for detecting the treated stones.

  15. Evidence of colour-modification induced charge and structural disorder in natural corundum: Spectroscopic studies of beryllium treated sapphires and rubies

    Energy Technology Data Exchange (ETDEWEB)

    Sastry, M D; Mane, Sandesh N; Gaonkar, Mahesh P; Panjikar, J; Ramachandran, K T [Gemmological Institute of India, 304 Sukhsagar Building, N.S.Patkar Marg, Opera House, Mumbai 400 007 (India); Bagla, H, E-mail: mdsastry@yahoo.co.in [Department of Chemistry, KC College, Church gate, Mumbai 400 020 (India)

    2009-07-15

    Corundum {alpha} - Al{sub 2}O{sub 3} single crystals is an important gemstone known by different names depending on the colour it exhibits which in turn depends on the impurities that are present. The colour depends on the valence state of the impurity element present in corundum (Cr{sup 3+} in ruby, Fe{sup 3+} in yellow sapphire and Fe-Ti complex in blue sapphire). There have been a number of reports of diffusion controlled high temperature chemical reactions to influence the colouration in these materials. Present paper deals with the Raman and FT-IR results on Be treated rubies/sapphires and gives evidence of the disorder brought about by such treatments. This can be effectively used for diagnostic purposes for detecting the treated stones.

  16. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

    Science.gov (United States)

    Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

    2013-08-23

    Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

  17. School Social Work Case Characteristics, Services, and Dispositions: Year One Results

    Science.gov (United States)

    Jonson-Reid, Melissa; Kontak, Dot; Citerman, Barbara; Essma, Angie; Fezzi, Nancy

    2004-01-01

    This article describes the results from the first year of a longitudinal study of a school social work caseload in a large midwestern school district. The purpose of the investigation was to examine the relationship among case characteristics, types of services provided, and case dispositions. Data were collected using a management information…

  18. Statistical evaluation of characteristic SDDLV-induced stress resultants to discriminate between undamaged and damaged elements

    Science.gov (United States)

    Hansen, L. M.; Johansen, R. J.; Ulriksen, M. D.; Tcherniak, D.; Damkilde, L.

    2015-07-01

    The stochastic dynamic damage location vector (SDDLV) method utilizes the vectors from the kernel of a damaged-induced transfer function matrix change to localize damages in a structure. The kernel vectors associated with the lowest singular values are converted into static pseudo-loads and applied alternately to an undamaged reference model with known stiffness matrix, hereby, theoretically, yielding characteristic stress resultants approaching zero in the damaged elements. At present, the discrimination between potentially damaged elements and undamaged ones is typically conducted on the basis of modified characteristic stress resultants, which are compared to a pre-defined tolerance value, without any thorough statistical evaluation. In the present paper, it is tested whether three widely-used statistical pattern-recognition-based damage-detection methods can provide an effective statistical evaluation of the characteristic stress resultants, hence facilitating general discrimination between damaged and undamaged elements. The three detection methods in question enable outlier analysis on the basis of, respectively, Euclidian distance, Hotelling's T2 statistics, and Mahalanobis distance. The study of the applicability of these methods is based on experimentally obtained accelerations of a cantilevered residential-sized wind turbine blade subjected to an unmeasured multi-impulse load. The characteristic stress resultants are derived by applying the static pseudo-loads to a representative finite element (FE) model of the actual blade.

  19. Body Characteristics, Dietary Protein and Body Weight Regulation. Reconciling Conflicting Results from Intervention and Observational Studies?

    DEFF Research Database (Denmark)

    Ankarfeldt, Mikkel Z; Angquist, Lars; Stocks, Tanja

    2014-01-01

    , and body characteristics. Different subsets of the DCH-participants, comparable with the trial participants, were analyzed for weight maintenance according to the randomization status (high or low protein) of the matched trial participants. RESULTS: Trial participants were generally heavier, had larger...... waist circumference and larger fat mass than the participants in the entire DCH cohort. A better weight maintenance in the high-protein group compared to the low protein group was observed in the subgroups of the DCH cohort matching body characteristics of the trial participants. CONCLUSION......: This modified observational study, minimized the differences between the RCT and observational data with regard to dietary intake, participant characteristics and statistical analysis. Compared with low protein diet the high protein diet was associated with better weight maintenance when individuals...

  20. A High Power and High Repetition Rate Modelocked Ti-Sapphire Laser for Photoinjectors

    Energy Technology Data Exchange (ETDEWEB)

    J. Hansknecht; M. Poelker

    2001-07-01

    A high power cw mode-locked Ti-sapphire laser has been constructed to drive the Jefferson Lab polarized photoinjector and provide > 500 mW average power with 50 ps pulsewidths at 499 MHz or 1497 MHz pulse repetition rates. This laser allows efficient, high current synchronous photoinjection for extended periods of time before intrusive steps must be taken to restore the quantum efficiency of the strained layer GaAs photocathode. The use of this laser has greatly enhanced the maximum high polarization beam current capability and operating lifetime of the Jefferson Lab photoinjector compared with previous performance using diode laser systems. A novel modelocking technique provides a simple means to phase-lock the optical pulse train of the laser to the accelerator and allows for operation at higher pulse repetition rates to {approx} 3 GHz without modification of the laser cavity. The laser design and characteristics are described below.

  1. Single-crystal Sapphire Based Optical Polarimetric Sensor for High Temperature Measurement

    Directory of Open Access Journals (Sweden)

    Anbo Wang

    2006-08-01

    Full Text Available Optical sensors have been investigated and widely deployed in industrial andscientific measurement and control processes, mainly due to their accuracy, high sensitivityand immunity to electromagnetic interference and other unique characteristics. They areespecially suited for harsh environments applications, where no commercial electricalsensors are available for long-term stable operations. This paper reports a novel contactoptical high temperature sensor targeting at harsh environments. Utilizing birefringentsingle crystal sapphire as the sensing element and white light interferometric signalprocessing techniques, an optical birefringence based temperature sensor was developed.With a simple mechanically structured sensing probe, and an optical spectrum-codedinterferometric signal processor, it has been tested to measure temperature up to 1600 °Cwith high accuracy, high resolution, and long-term measurement stability.

  2. Cryo-Cooled Sapphire Oscillator for the Cassini Ka-Band Experiment

    Science.gov (United States)

    Wang, Rabi T.; Dick, G. John

    1997-01-01

    We present features for an ultra-stable sapphire cryogenic oscillator which has been designed to support the Cassini Ka-band Radio Science experiment. The design of this standard is new in several respects. It is cooled by a commercial cryocooler instead of liquid cryogens to increase operating time, and it uses a technology to adjust the temperature turn-over point to extend the upper operating temperature limit and to enable construction of multiple units with uniform operating characteristics. Objectives are 3 x 10(exp -15) stability for measuring times 1 second less than or equal to (tau) less than or equal to 100 seconds, phase noise of -85 dBc/Hz from offset frequencies of 1 Hz to 1000 Hz at 10 GHz carrier frequency, and a one year continuous operating period.

  3. Atomic fountain clock with very high frequency stability employing a pulse-tube-cryocooled sapphire oscillator.

    Science.gov (United States)

    Takamizawa, Akifumi; Yanagimachi, Shinya; Tanabe, Takehiko; Hagimoto, Ken; Hirano, Iku; Watabe, Ken-ichi; Ikegami, Takeshi; Hartnett, John G

    2014-09-01

    The frequency stability of an atomic fountain clock was significantly improved by employing an ultra-stable local oscillator and increasing the number of atoms detected after the Ramsey interrogation, resulting in a measured Allan deviation of 8.3 × 10(-14)τ(-1/2)). A cryogenic sapphire oscillator using an ultra-low-vibration pulse-tube cryocooler and cryostat, without the need for refilling with liquid helium, was applied as a local oscillator and a frequency reference. High atom number was achieved by the high power of the cooling laser beams and optical pumping to the Zeeman sublevel m(F) = 0 employed for a frequency measurement, although vapor-loaded optical molasses with the simple (001) configuration was used for the atomic fountain clock. The resulting stability is not limited by the Dick effect as it is when a BVA quartz oscillator is used as the local oscillator. The stability reached the quantum projection noise limit to within 11%. Using a combination of a cryocooled sapphire oscillator and techniques to enhance the atom number, the frequency stability of any atomic fountain clock, already established as primary frequency standard, may be improved without opening its vacuum chamber.

  4. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

    Science.gov (United States)

    Miyake, Hideto; Lin, Chia-Hung; Tokoro, Kenta; Hiramatsu, Kazumasa

    2016-12-01

    The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped "face-to-face" to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1600-1700 °C. The full widths at half maximum of the (0002)- and (10 1 bar2)-plane X-ray rocking curves were improved to 49 and 287 arcsec, respectively, owing to the annihilation of domain boundaries in the sputtered AlN films, which concurrently increased the compressive stress in the films.

  5. Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The orientation of the nano-columnar ZnO films grown on sapphire using the technique of metal-organic chemical vapor deposition (MOCVD) exhibits deviation because of the mismatch between the crystal lattices of the films and the sapphire substrate. A high-throughout X-ray diffraction method was employed to determine the crystal orientation of the ZnO films at a time scale of the order of minutes based on the general area detection diffraction system (GADDS). This rapid, effective, and ready method, adapted for characterizing the orientation of the nano-columnar crystals is used to directly explain the results of observation of the X-ray diffraction images, by the measurements of the orientations of the crystal columns of the ZnO films along c-axis and in parallel to ab plane.

  6. Study on planarization machining of sapphire wafer with soft-hard mixed abrasive through mechanical chemical polishing

    Science.gov (United States)

    Xu, Yongchao; Lu, Jing; Xu, Xipeng

    2016-12-01

    This study investigated the material removal mechanism of sapphire wafer with soft-hard mixed abrasives through mechanical chemical polishing (MCP). The polishing film, which contains diamond as hard abrasives and high reactivity silica as soft abrasives, is prepared through sol-gel technology. Silica abrasives with regular spherical shape and high reactivity are prepared through hydrolysis-precipitation. Diamond grits with three different particle sizes are used as abrasives. Results show that the rate of material removal of mixed abrasives during MCP is more than 52.6% of that of single hard abrasives and the decrease in surface roughness is more than 21.6% of that of single hard abrasives. These results demonstrate that the ideal planarization of sapphire wafer with high removal rate and good surface quality can be achieved when the effect of mechanical removal of hard abrasives and the chemical corrosion effect of soft abrasives are in dynamic equilibrium. A model that describes the material removal mechanism of sapphire with mixed abrasives during MCP is proposed. The results of thermodynamic calculation and polishing residue analysis are used to demonstrate the rationality of the model.

  7. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  8. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Mary Hagerott; Olson, S. M. (Aonex Technologies Inc., Pasadena, CA); Banas, M.; Park, Y. -B. (Aonex Technologies Inc., Pasadena, CA); Ladous, C. (Aonex Technologies Inc., Pasadena, CA); Russell, Michael J.; Thaler, Gerald; Zahler, J. M. (Aonex Technologies Inc., Pasadena, CA); Pinnington, T. (Aonex Technologies Inc., Pasadena, CA); Koleske, Daniel David; Atwater, Harry A. (Aonex Technologies Inc., Pasadena, CA)

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  9. The characteristic black hole mass resulting from direct collapse in the early Universe

    Science.gov (United States)

    Latif, M. A.; Schleicher, D. R. G.; Schmidt, W.; Niemeyer, J. C.

    2013-12-01

    Black holes of a billion solar masses are observed in the infant Universe a few hundred million years after the big bang. The direct collapse of protogalactic gas clouds in primordial haloes with Tvir ≥ 104 K provides the most promising way to assemble massive black holes. In this study, we aim to determine the characteristic mass scale of seed black holes and the time evolution of the accretion rates resulting from the direct collapse model. We explore the formation of supermassive black holes via cosmological large eddy simulations (LES) by employing sink particles and following their evolution for 20 000 yr after the formation of the first sink. As the resulting protostars were shown to have cool atmospheres in the presence of strong accretion, we assume here that UV feedback is negligible during this calculation. We confirm this result in a comparison run without sinks. Our findings show that black hole seeds with characteristic mass of 105 M⊙ are formed in the presence of strong Lyman-Werner flux which leads to an isothermal collapse. The characteristic mass is about two times higher in LES compared to the implicit large eddy simulations. The accretion rates increase with time and reach a maximum value of 10 M⊙ yr-1 after 104 yr. Our results show that the direct collapse model is clearly feasible as it provides the expected mass of the seed black holes.

  10. A scalable pathway to nanostructured sapphire optical fiber for evanescent-field sensing and beyond

    Science.gov (United States)

    Chen, Hui; Tian, Fei; Kanka, Jiri; Du, Henry

    2015-03-01

    We here report an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an all-alumina nanostructured sapphire optical fiber (NSOF). The strategy entails fiber coating with metal aluminum followed by anodization to form alumina cladding of highly organized pore channel structure. Through experiments and numerical simulation, we demonstrate the utility and benefit of NSOF, analogous to all-silica microstructured optical fiber, for evanescent-field surface-enhanced Raman scattering (SERS) measurements. We experimentally reveal the feasibility of Ag nanoparticles (NPs)-enabled NSOF SERS sensing of 10-6 M Rhodamine 6G (R6G) after thermal treatment at 500 °C for 6 h by taking advantage of porous anodic aluminum oxide (AAO) structure to stabilize the Ag NPs. We show, via numerical simulations, that AAO cladding significantly increases the evanescent-field overlap, lower porosity of AAO results in higher evanescent-field overlap, and optimized AAO nanostructure yields greater SERS enhancement.

  11. Tunable integrated optical filters based on sapphire microspheres and liquid crystals

    Science.gov (United States)

    Gilardi, Giovanni; Yilmaz, Hasan; Sharif Murib, Mohammed; Asquini, Rita; d'Alessandro, Antonio; Serpengüzel, Ali; Beccherelli, Romeo

    2010-05-01

    We present an integrated optical narrowband electrically tunable filter based on the whispering gallery modes of sapphire microspheres and double ion-exchanged channel BK7 glass waveguides. Tuning is provided by a liquid crystal infiltrated between the spheres and the glass substrate. By suitably choosing the radii of the spheres and of the circular apertures, upon which the spheres are positioned, arrays of different filters can be realized on the same substrate with a low cost industrial process. We evaluate the performance in terms of quality factor, mode spacing, and tuning range by comparing the numerical results obtained by the numerical finite element modeling approach and with the analytical approach of the Generalized Lorenz-Mie Theory for various design parameters. By reorienting the LC in an external electrical field, we demonstrate the tuning of the spectral response of the sapphire microsphere based filter. We find that the value of the mode spacing remains nearly unchanged for the different values of the applied electric field. An increase of the applied electric field strength, changes the refractive index of the liquid crystal, so that for a fixed geometry the mode spacing remains unchanged.

  12. Three-dimensional structuring of sapphire by sequential He sup + ion-beam implantation and wet chemical etching

    CERN Document Server

    Crunteanu, A; Hoffmann, P; Pollnau, M; Buchal, C; Petraru, A; Eason, R W; Shepherd, D P

    2003-01-01

    We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 mu m and subsequent selective wet chemical etching of the damaged regions by hot H sub 3 PO sub 4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1 x 10 sup 1 sup 6 to 5 x 10 sup 1 sup 7 He sup + /cm sup 2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. (orig.)

  13. Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

    Science.gov (United States)

    Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio

    2017-02-01

    Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO2 probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

  14. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  15. Detection of beryllium treatment of natural sapphires by NRA

    Science.gov (United States)

    Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.

    2010-06-01

    Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.

  16. Thermal Control of a Dual Mode Parametric Sapphire Transducer

    CERN Document Server

    Belfi, Jacopo; De Michele, Andrea; Gabbriellini, Gianluca; Mango, Francesco; Passaquieti, Roberto

    2010-01-01

    We propose a method to control the thermal stability of a sapphire dielectric transducer made with two dielectric disks separated by a thin gap and resonating in the whispering gallery (WG) modes of the electromagnetic field. The simultaneous measurement of the frequencies of both a WGH mode and a WGE mode allows one to discriminate the frequency shifts due to gap variations from those due to temperature instability. A simple model, valid in quasi equilibrium conditions, describes the frequency shift of the two modes in terms of four tuning parameters. A procedure for the direct measurement of them is presented.

  17. Ultrafast, ultrahigh-peak power Ti:sapphire laser system

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

    2001-01-01

    We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

  18. Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

    Science.gov (United States)

    Choi, Sang; King, Glen; Park, Yeonjoon

    2009-01-01

    SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

  19. Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

    Science.gov (United States)

    Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

    1988-01-01

    Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

  20. Sextant of Sapphires for Molar Distalization

    Science.gov (United States)

    Palla, Yudistar Venkata; Ganugapanta, Vivek Reddy

    2016-01-01

    Introduction Space analysis quantifies the amount of crowding within the arches estimating the severity of space discrepancy. The space gaining procedures include extraction and non-extraction procedures like expansion, proximal stripping and molar distalization. Aim To identify features seen in molar distalization cases. Materials and Methods The sample size comprised 20 patients in whom molar distalization was decided as the treatment plan. The study models and lateral cephalograms of all the patients were taken. Occlusograms were obtained. Model analysis and cephalometric analysis were performed. Descriptive statistical analysis like mean, standard deviation, standard error and mode were done. Results The parameters in Question gave following results. The Bolton analysis showed anterior mandibular excess with mean value of 1.56mm±1.07. The first order discrepancy between maxillary central and lateral incisors was 5±1.95. The premolar rotation showed mean value of 16.58±5.12. The molar rotation showed the value of 7.66±2.26. The nasolabial angle showed the mean of 101.25±8.7 IMPA of 101.4±5.74. Conclusion The six features studied in molar distalization cases [First order discrepancy between upper central and lateral incisors; Rotation of premolars and molars; Bolton’s discrepancy in anterior dentition; Average to horizontal growth pattern; Proclined lower incisors and Obtuse nasolabial angle] can be taken as patterns seen in molar distalization cases and considered as a valid treatment plan. PMID:27656572

  1. YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

    Science.gov (United States)

    Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

    1996-01-01

    Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

  2. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  3. Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide

    NARCIS (Netherlands)

    Crunteanu, A.; Jänchen, G.; Salathé, R.P.; Hoffmann, P.; Pollnau, M.; Eason, R.W.; Shepherd, D.P.

    2002-01-01

    We were successful in creating 1.4-µm high ribs in a Ti:sapphire planar waveguide by reactive ion etching. Optical investigations of the obtained structure showed channel-waveguide fluorescence emission of the Ti:sapphire layer after Ar-ion excitation.

  4. Three dimensional material removal model of laser-induced backside wet etching of sapphire substrate with CuSO4 solutions

    Science.gov (United States)

    Xie, Xiaozhu; Huang, Xiandong; Jiang, Wei; Wei, Xin; Hu, Wei; Ren, Qinglei

    2017-03-01

    The mechanism of laser-induced backside wet etching (LIBWE) of sapphire substrate with CuSO4 solution is considered as a two-step process. First, it deposits the layer from copper sulfate solution on the backside of sapphire substrate by 1064 nm laser irradiation. Then it is followed by the absorption of deposited layer to laser irradiation, resulting in the etching of the sapphire. Therefore, the material removal of LIBWE is based on laser interaction with multilayer materials (sapphire substrate-deposition layer-liquid solution). A three-dimensional thermal model is established to simulate the material removal during the LIBWE process by considering the material data variations of temperature, enthalpy change and latent heat fusion. The model can predict the groove shape influenced by the laser processing parameters (laser fluence, scanning velocity and scanning pass). The simulation results indicate that the groove depth increases with the decreasing of scanning velocity, the increasing of laser fluence and the scanning pass. The groove width is comparable with the focal beam diameter. Some peaks and valleys occur at the bottom of the groove. A comparison between the modeling and experiment indicates that the groove shape in simulation agrees well with the experiment data at laser pulse energy of 4.3 mJ/pulse, scanning velocity of 15 mm/s and the scanning pass of 4. i.e, the present physical model is effective and feasible.

  5. Body Characteristics, Dietary Protein and Body Weight Regulation. Reconciling Conflicting Results from Intervention and Observational Studies?

    DEFF Research Database (Denmark)

    Ankarfeldt, Mikkel Z; Angquist, Lars; Stocks, Tanja;

    2014-01-01

    between greater protein intake and weight gain. In both types of studies the results are based on average weight changes, and show considerable diversity in both directions. This study investigates whether the discrepancy in the evidence could be due to recruitment of overweight and obese individuals......: This modified observational study, minimized the differences between the RCT and observational data with regard to dietary intake, participant characteristics and statistical analysis. Compared with low protein diet the high protein diet was associated with better weight maintenance when individuals...

  6. MICROBIOLOGICAL CHARACTERISTICS OF MILK FROM DONKEYS FARMED IN CAMPANIA REGION: PRELIMINARY RESULTS

    Directory of Open Access Journals (Sweden)

    E. Sarno

    2012-08-01

    Full Text Available Interest in donkey’s milk destined to human consumption is increasing owing to its complex composition and unique functional properties. The microbiological profile of donkeys’ raw milk was investigated. Individual donkey milk samples were collected from 8 asses after mechanical milking and filtration in a farm of Campania region. A total of 133 samples were analyzed. Total plate count bacteria and Enterobacteriaceae were enumerated. Other microbiological characteristics were monitored as established by legislation in force on the sale of raw milk. Results showed a low contamination level of the raw milk in accordance with other authors. No correlations were evidenced between milk contamination and lactation stage.

  7. RESULTS OF INVESTIGATIONS ON THERMAL CHARACTERISTICS OF AIR HEATER BUNDLE MADE OF BIMETALLIC FINNED TUBES

    Directory of Open Access Journals (Sweden)

    V. B. Kuntysh

    2014-01-01

    Full Text Available The paper presents a scheme and description of a new aerodynamic stand that has a 300x300 mm cross-section operating channel. The stand is used for studying thermal and aerodynamic characteristics of bundles made of finned tubes of actual dimensions in crossflow. The paper provides results of an exploratory test pertaining to heat transfer and resistance of four row staggered bundle made of tubes with aluminium spiral fins having outside diameter of 26 mm which are used in the systems of ventilation, air-conditioning and heating of buildings and also in transport heat exchangers.

  8. Fiber-laser-pumped Ti:sapphire laser

    CERN Document Server

    Samanta, G K; Devi, Kavita; Ebrahim-Zadeh, M

    2010-01-01

    We report the first experimental demonstration of efficient and high-power operation of a Ti:sapphire laser pumped by a simple, compact, continuous-wave (cw) fiber-laser-based green source. The pump radiation is obtained by direct single-pass second-harmonic-generation (SHG) of a 33-W, cw Yb-fiber laser in 30-mm-long MgO:sPPLT crystal, providing 11 W of single-frequency green power at 532 nm in TEM00 spatial profile with power and frequency stability better than 3.3% and 32 MHz, respectively, over one hour. The Ti:sapphire laser is continuously tunable across 743-970 nm and can deliver an output power up to 2.7 W with a slope efficiency as high as 32.8% under optimum output coupling of 20%. The laser output has a TEM00 spatial profile with M2<1.44 across the tuning range and exhibits a peak-to-peak power fluctuation below 5.1% over 1 hour.

  9. The characteristic black hole mass resulting from direct collapse in the early universe

    CERN Document Server

    Latif, M A; Schmidt, W; Niemeyer, J C

    2013-01-01

    Black holes of a billion solar masses are observed in the infant universe a few hundred million years after the Big Bang. The direct collapse of protogalactic gas clouds in primordial halos with $\\rm T_{vir} \\geq 10^{4} K$ provides the most promising way to assemble massive black holes. In this study, we aim to determine the characteristic mass scale of seed black holes and the time evolution of the accretion rates resulting from the direct collapse model. We explore the formation of supermassive black holes via cosmological large eddy simulations (LES) by employing sink particles and following their evolution for twenty thousand years after the formation of the first sink. As the resulting protostars were shown to have cool atmospheres in the presence of strong accretion, we assume here that UV feedback is negligible during this calculation. We confirm this result in a comparison run without sinks. Our findings show that black hole seeds with characteristic mass of $\\rm 10^{5} M_{\\odot}$ are formed in the pr...

  10. Defining Dynamic Characteristics of Multilink Pendulum System with Comparison of the Calculated and Experimental Results

    Directory of Open Access Journals (Sweden)

    V. A. Gribkov

    2015-01-01

    Full Text Available We consider the multilink pendulum system consisting of six physical pendulums. A pendulum (carrier has inertia parameters, which significantly exceed the remaining (carried ones placed on the carrier. In addition to the system under analysis, in particular, the paper presents a design scheme for a two-stage liquid fuel rocket using pendulums as the analogues of fluctuating fuel. Pendulum models also find application to solve problems of stabilization of space tether systems. The objective of the study is to determine dynamic characteristics of the said sixmembered pendulum system, as well as to identify specific dynamic properties inherent in objects of this kind. Dynamic characteristics of the system are determined by calculations. A physical model of the pendulum allowed us to compare the calculated and experimental results. To conduct the frequency tests of the pendulum model three pilot units have been created. The first two units turned out to be inappropriate for fulfilling the experimental tasks for various reasons. The third unit enabled us to obtain desirable experimental results. The "calculation–experiment” discrepancy on the natural frequencies of the pendulum model for the majority of frequencies was less than 5%. We analyzed the dynamic features of multilink pendulum systems "carried by the carrier unit links". The analysis results are applicable to the above-noted object classes of rocket and space technology.

  11. Early Period Results and Clinical Characteristics of Upper Gastrointestinal Endoscopy in Sivrihisar State Hospital

    Directory of Open Access Journals (Sweden)

    Ozgur Turk

    2014-12-01

    Full Text Available Aim: Our aim was to identify the characteristics of the patient that performed upper gastrointestinal endoscopy in a new established endoscopy unit of a state hospital. We want to present the spectrum of gastrointestinal diseases in our hospitals region. Material and Method: We analyzed patients upper endoscopy results according to age, sex, complaints, clinical characteristics, type of anesthesia, and the necessity of biopsy. We reviewed 256 patients data between 2013 December-2014 July. All endoscopies were performed by same surgeon. Results: The highest complaint was epigastric pain (n=112, 43, 8%. Other complaints were followed as dyspepsia (n=84, 32.8%, heartburn (n=42, 16.4%, nausea (n=4, 1.6%, vomiting (n=2, 0.8%, dysphagia (n=6, 2.3%. We determined 218 gastritis (85.2%, 64 hiatal hernia (25%, 120 esophagitis (46.9%, 76 duodenitis (29.7%, 4 gastric ulcer (1.6%, 18 duodenal ulcers (7%, 20 bile reflux (7.8%, 26 Gastro esophageal reflux disease (GERD in patients (10.2%. 10 patients reported as normal (3.9%. Biopsy was performed in 186 of the patients. Discussion: Endoscopy can become an early diagnostic examination by increasing the availability of endoscopy. Also alarm symptoms should not be ignored and endoscopy should perform immediately in symptomatic patients. As an early result of upper gastrointestinal endoscopies that performed in this study; gastritis, esophagitis, duodenitis and hiatal hernia are common gastrointestinal diseases in our region.

  12. Patient preferences for characteristics of antiretroviral therapies: results from five European countries

    Directory of Open Access Journals (Sweden)

    Brian Gazzard

    2014-11-01

    Full Text Available Introduction: Patient preference to antiretroviral therapy (ART characteristics should be a key consideration in treatment decisions. ART options exist for people living with HIV (PLWH, however concerns remain related to PLWH satisfaction with current ARTs. The current study examines patient preferences and the strength of preferences for treatment characteristics associated with ART. Materials and Methods: Patients’ preferences to ART were explored using a discrete choice experiment (DCE. Seven defined treatment characteristics (each with three categories were identified from a literature review, input from experts, PLWH and physicians. A total of 1582 PLWH from France, Germany, Spain, Italy and the UK were recruited for the study. An adjusted odds ratio <1 signified lower odds of selecting a treatment with this characteristic category, compared to the reference category, independently of other characteristics. Results: The patient preference analyses showed that participants preferred treatments with a rapid reduction in viral load (OR=0.78; 95% CI 0.74–0.81 and CD4 count (OR=0.86; 95% CI=0.82–0.89. Participants had a strong preference for avoiding diarrhoea (Odds ratio, OR=0.36 95% CI=0.33–0.38 and long term health problems (OR=0.30, 95% CI=0.28–0.32. Convenience related issues related to restrictions on taking drugs because of food or drug interactions were important to avoid (OR=0.80, 95% CI=0.76–0.83 and OR=0.72 95% CI=0.69–0.76 respectively. Participants also had a strong preference to avoid drugs which limited the effectiveness of future treatments (OR=0.70, 95% CI=0.67–0.73. Conclusions: Avoidance of diarrhoea and long-term complications were the most important drivers of patient choice. This study, from a large sample of European patients, demonstrates the importance to patients when different aspects of HIV treatment are considered simultaneously.

  13. Stress-strain characteristics of materials at high strain rates. Part II. Experimental results

    Energy Technology Data Exchange (ETDEWEB)

    Ripperger, E. A. [Texas. Univ., Austin, TX (US). Structural Mechanics Research Lab.

    1958-08-29

    These two reports were issued separately, but are cataloged as a unit. A photoelectric method for measuring displacements during high-velocity impacts is described. The theory of the system is discussed in detail, and a prototype system which was built and tested is described. The performance of the prototype system is evaluated by comparing the results which it gives with results obtained by other methods of measurement. The system was found capable of a resolution of at least 0.01 inches. static and dynamic stress-strain characteristics of seven high polymers, polyethylene, teflon, nylon, tenite M, tenite H, polystyrene, and saran, plus three metals, lead, copper, and aluminum, are described and compared by means of stress-strain curves and photographs. Data are also presented which show qualitatively the effects produced on stress-strain characteristics by specimen configuration, temperature, and impact velocity. It is shown that there is a definite strain-rate effect for all these materials except polystyrene. The effect is one of an apparent stiffening of the material with increasing strain rate, which is similar to the effect produced by lowering the temperature. The stress-strain measurements are examined critically, inconsistencies are pointed out, and possible sources of error suggested. Values of yield stress, modulus of elasticity and energy absorption for all materials (except copper and aluminum), specimen configurations, temperatures, and impact velocities included in the investigation are tabulated.

  14. Numerical investigation of factors affecting the shape of the crystal-melt interface in edge-defined film-fed growth of sapphire crystals

    Science.gov (United States)

    Stelian, C.; Barthalay, N.; Duffar, T.

    2017-07-01

    Numerical modeling is used to investigate the shape of the crystal-melt interface in edge-defined film-fed growth (EFG) of large size sapphire rods and sheets. The present analysis shows that the temperature distribution in the meniscus is significantly affected by the internal radiative exchanges in the sapphire crystal. 2D axisymmetric computations performed in the case of sapphire rods, show a concave shape of the interface for opaque crystals, and a convex shaped interface for semi-transparent crystals. The temperature gradient across the meniscus increases significantly in the case which accounts for the internal radiative effect in the crystal. Large temperature differences along the free surface of the meniscus generate intense Marangoni flow, which can influence the shape of the growth interface. In this case, the meniscus height increases, producing instabilities in the growth process. The effect of die geometry on the interface shape is analyzed by increasing the angle between the working edges of the die. Computations shows that the interface curvature decreases as this angle increases, but the solidification isotherm moves up, leading to an increased meniscus height. 3D modeling is applied to investigate the EFG growth of large size sapphire sheets. Numerical results show a non-uniform temperature distribution in the meniscus, and a complex 3D flow pattern. However, the intensity of the flow is low in this case, having no influence on the temperature field and interface shape.

  15. Electron-beam irradiation effects on luminescence properties in subsurface regions of single-crystalline sapphires treated with and without hydrogen plasma exposures

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Bo-Hyun [Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)]. E-mail: bhlee@daiyan.eei.eng.osaka-u.ac.jp; Ito, Toshimichi [Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)

    2007-10-15

    Electron irradiation effects on various insulating sapphires treated with and without hydrogen plasma have been investigated mainly by means of cathodoluminescence (CL) measurements. The samples examined included Be-diffusion-treated natural sapphire (BNS) and two types of synthetic sapphires grown by Verneuil and Czochralski methods. For all the samples examined, on one hand, their CL intensities of the F{sup +}-center-related emission peaked at {approx}3.8 eV rapidly increased with increasing the fluences of keV electrons, and were represented roughly by exponentially saturating curves. There occurred slight blue-shifts of the F{sup +}-center luminescence other than the intensity increases for some of the electron-irradiated specimens, suggesting possible presence of two components for the F{sup +}-center luminescence. On the other hand, a hydrogen plasma exposure to these sapphires resulted in sample-dependent changes in the optical property and in the beam-irradiation effect on the F{sup +}-center CL emission. Such variations were induced most strongly in the BNS sample, whose color changed from orange to pink due to substantial decreases in the absorbance after the hydrogen plasma treatment. Furthermore, the energy positions of both the Cr{sup 3+}-center luminescence peaked at {approx}1.8 eV and its satellite peaks were found to slightly shift for the untreated and H-plasma-treated BNS samples after the electron beam irradiations. Possible origins of these observations are discussed.

  16. A Pharmaceutical Bioethics Consultation Service: Six-Year Descriptive Characteristics and Results of a Feedback Survey.

    Science.gov (United States)

    Van Campen, Luann E; Allen, Albert J; Watson, Susan B; Therasse, Donald G

    2015-04-03

    Background: Bioethics consultations are conducted in varied settings, including hospitals, universities, and other research institutions, but there is sparse information about bioethics consultations conducted in corporate settings such as pharmaceutical companies. The purpose of this article is to describe a bioethics consultation service at a pharmaceutical company, to report characteristics of consultations completed by the service over a 6-year period, and to share results of a consultation feedback survey. Methods: Data on the descriptive characteristics of bioethics consultations were collected from 2008 to 2013 and analyzed in Excel 2007. Categorical data were analyzed via the pivot table function, and time-based variables were analyzed via formulas. The feedback survey was administered to consultation requesters from 2009 to 2012 and also analyzed in Excel 2007. Results: Over the 6-year period, 189 bioethics consultations were conducted. The number of consultations increased from five per year in 2008 to approximately one per week in 2013. During this time, the format of the consultation service was changed from a committee-only approach to a tiered approach (tailored to the needs of the case). The five most frequent topics were informed consent, early termination of a clinical trial, benefits and risks, human biological samples, and patient rights. The feedback survey results suggest the consultation service is well regarded overall and viewed as approachable, helpful, and responsive. Conclusions: Pharmaceutical bioethics consultation is a unique category of bioethics consultation that primarily focuses on pharmaceutical research and development but also touches on aspects of clinical ethics, business ethics, and organizational ethics. Results indicate there is a demand for a tiered bioethics consultation service within this pharmaceutical company and that advice was valued. This company's experience indicates that a bioethics consultation service raises

  17. Reduction of batwing effect in white light interferometry for measurement of patterned sapphire substrates (PSS) wafer

    Science.gov (United States)

    Tapilouw, Abraham Mario; Chang, Yi-Wei; Yu, Long-Yo; Wang, Hau-Wei

    2016-08-01

    Patterned sapphire substrates (PSS) wafers are used in LED manufacturing to enhance the luminous conversion of LED chips. The most critical characteristics in PSS wafers are height, width, pitch and shape of the pattern. The common way to measure these characteristics is by using surface electron microscope (SEM). White light interferometry is capable to measure dimension with nanometer accuracy and it is suitable for measuring the characteristics of PSS wafers. One of the difficulties in measuring PSS wafers is the aspect ratio and density of the features. The high aspect ratio combined with dense pattern spacing diffracts incoming lights and reduces the accuracy of the white light interferometry measurement. In this paper, a method to improve the capability of white light interferometry for measuring PSS wafers by choosing the appropriate wavelength and microscope objective with high numerical aperture. The technique is proven to be effective for reducing the batwing effect in edges of the feature and improves measurement accuracy for PSS wafers with circular features of 1.95 um in height and diameters, and 700 nm spacing between the features. Repeatability of the measurement is up to 5 nm for height measurement and 20 nm for pitch measurement.

  18. Characteristics of Pneumatic Tuners of Torsional Oscillation as a Result of Patent Activity

    Directory of Open Access Journals (Sweden)

    Homišin Jaroslav

    2016-12-01

    Full Text Available Mechanical systems with combustion engines, compressors, pumps and fans, can be characterized as torsional oscillating mechanical systems (TOMS. It is therefore necessary to control their dangerous torsional vibrations. It was confirmed that dangerous torsional vibration can be reduced to acceptable level by an appropriate adjustment, respectively by tuning the TOMS. According to several authors, the most appropriate way of system tuning is application of suitable flexible element, which is flexible shaft coupling. It turned out that one of the types of shaft couplings, which are particularly suited to meeting this objective are pneumatic flexible shaft couplings, to act as so-called pneumatic tuners of torsional oscillations. The issue of research and development of pneumatic tuners of torsional oscillations, among other things is, long-term in the focus of the author. The existence of tuners creates the opportunity to develop new ways of tuning torsional oscillating mechanical systems. The author of the scientific article will focus on the characteristics of developed pneumatic tuners of torsional oscillation in terms of their design, construction, function, significance advantages and conditions imposed on pneumatic tuners based on the results of his patent activity. Simultaneously provides information about the characteristic properties of pneumatic tuners of torsional oscillations in the general design.

  19. High-temperature sapphire optical sensor fiber coatings

    Science.gov (United States)

    Desu, Seshu B.; Claus, Richard O.; Raheem, Ruby; Murphy, Kent A.

    1990-10-01

    the filter. These modes may be attributed to a number of material degradation mechanisms, such as thermal shock, oxidation corrosion of the material, mechanical loads, or phase changes in the filter material. Development of high temperature optical fiber (sapphire) sensors embedded in the CXF filters would be very valuable for both monitoring the integrity of the filter during its use and understanding the mechanisms of degradation such that durable filter development will be facilitated. Since the filter operating environment is very harsh, the high temperature sapphire optical fibers need to be protected and for some sensing techniques the fiber must also be coated with low refractive index film (cladding). The objective of the present study is to identify materials and develop process technologies for the application of claddings and protective coatings that are stable and compatible with sapphire fibers at both high temperatures and pressures.

  20. Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    Liu Bo; Zhang Sen; Yin Jia-Yun; Zhang Xiong-Wen; Dun Shao-Bo; Feng Zhi-Hong; Cai Shu-Jun

    2013-01-01

    The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer's thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated.The characteristics of AIN epilayers are analyzed by using triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM).It is shown that the crystal quality of the AlN epilayer is closely related to its correlation length.The correlation length is determined by the thickness of the initially grown HT-AIN buffer layer.We find that the optimal HT-AlN buffer thickness for obtaining a high-quality AlN epilayer grown on sapphire substrate is about 20 nm.

  1. A Peltier cooled single pass amplifier for Titanium:Sapphire laser pulses

    Science.gov (United States)

    Ozawa, A.; Schneider, W.; Najafi, F.; Hänsch, T. W.; Udem, Th.; Hommelhoff, P.

    2010-05-01

    We report on a Peltier cooled single pass amplifier for high repetition rate Titanium:sapphire laser pulses. Pumped with 14 W and seeded with around 400 mW, the output reaches 1.1 W with good beam quality. This amplifier is very user-friendly, easy to maintain and set up and thus represents a device situated between more complicated liquid-nitrogen cooled amplifiers that can operate at higher pump power, and very simple near to room temperature amplifiers that can only be pumped with less power. In addition, we show the results of a finite element simulation on the temperature distribution in a liquid nitrogen cooled amplifier setup designed for highest output powers.

  2. Nonlinear Phase Distortion in a Ti:Sapphire Optical Amplifier for Optical Stochastic Cooling

    Energy Technology Data Exchange (ETDEWEB)

    Andorf, Matthew [NICADD, DeKalb; Lebedev, Valeri [Fermilab; Piot, Philippe [NICADD, DeKalb; Ruan, Jinhao [Fermilab

    2016-06-01

    Optical Stochastic Cooling (OSC) has been considered for future high-luminosity colliders as it offers much faster cooling time in comparison to the micro-wave stochastic cooling. The OSC technique relies on collecting and amplifying a broadband optical signal from a pickup undulator and feeding the amplified signal back to the beam. It creates a corrective kick in a kicker undulator. Owing to its superb gain qualities and broadband amplification features, Titanium:Sapphire medium has been considered as a gain medium for the optical amplifier (OA) needed in the OSC*. A limiting factor for any OA used in OSC is the possibility of nonlinear phase distortions. In this paper we experimentally measure phase distortions by inserting a single-pass OA into one leg of a Mach-Zehnder interferometer. The measurement results are used to estimate the reduction of the corrective kick a particle would receive due to these phase distortions in the kicker undulator.

  3. Test of Lorentz Invariance in Electrodynamics Using Rotating Cryogenic Sapphire Microwave Oscillators

    CERN Document Server

    Stanwix, P L; Wolf, P; Susli, M; Locke, C R; Ivanov, E N; Winterflood, J; Van Kann, F; Stanwix, Paul L.; Tobar, Michael E.; Wolf, Peter; Susli, Mohamad; Locke, Clayton R.; Ivanov, Eugene N.; Winterflood, John; Kann, Frank van

    2005-01-01

    We present the first results from a rotating Michelson-Morley experiment that uses two orthogonally orientated cryogenic sapphire resonator-oscillators operating in whispering gallery modes near 10 GHz. The experiment is used to test for violations of Lorentz Invariance in the frame-work of the photon sector of the Standard Model Extension (SME), as well as the isotropy term of the Robertson-Mansouri-Sexl (RMS) framework. In the SME we set a new bound on the previously unmeasured kappa_{e-}^{ZZ} component of 2.1(5.7)x10^{-14}, and set more stringent bounds by up to a factor of 7 on seven other components. In the RMS a more stringent bound of -2.6(2.1)x10^{-10} on the isotropy parameter, P_{MM}= delta - beta + 1/2 is set, which is a factor of 7 improvement.

  4. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

    Institute of Scientific and Technical Information of China (English)

    Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

    2012-01-01

    The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail.The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor,resulting in a higher internal quantum efficiency (IQE).Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases.The illumination output power of the LED is affected by both θ and f.It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f.

  5. Narrow linewidth operation of the RILIS titanium: Sapphire laser at ISOLDE/CERN

    CERN Document Server

    Rothe, S; Wendt, K D A; Fedosseev, V N; Kron, T; Marsh, B A

    2013-01-01

    A narrow linewidth operating mode for the Ti:sapphire laser of the CERN ISOLDE Resonance Ionization Laser Ion Source (RILIS) has been developed. This satisfies the laser requirements for the programme of in-source resonance ionization spectroscopy measurements and improves the selectivity for isomer separation using RILIS. A linewidth reduction from typically 10 GHz down to 1 GHz was achieved by the intra-cavity insertion of a second (thick) Fabry-Perot etalon. Reliable operation during a laser scan was achieved through motorized control of the tilt angle of each etalon. A scanning, stabilization and mode cleaning procedure was developed and implemented in LabVIEW. The narrow linewidth operation was confirmed in a high resolution spectroscopy study of francium isotopes by the Collinear Resonance Ionization Spectroscopy experiment. The resulting laser scans demonstrate the suitability of the laser, in terms of linewidth, spectral purity and stability for high resolution in-source spectroscopy and isomer select...

  6. Anomalous Surface Deformation of Sapphire Clarified by 3D-FEM Simulation of the Nanoindentation

    Science.gov (United States)

    Nowak, Roman; Manninen, Timo; Li, Chunliang; Heiskanen, Kari; Hannula, Simo-Pekka; Lindroos, Veikko; Soga, Tetsuo; Yoshida, Fusahito

    This work clarifies the origin of anomalous surface deformation reflected by peculiar surface patterns around indentation impressions on various crystallographic planes of sapphire. The three-dimensional finite element simulation (3D-FEM) of nanoindentation in Al2O3 crystal allowed the authors to localize the regions in which various kinds of twinning and slip are most prone to be activated. The work provides a novel approach to the “hardness anisotropy”, which was modeled so far using a modified uniaxial-stress approximation of this essentially 3D, non-isotropic contact problem. The calculated results enabled the authors to unravel the asymmetric surface deformation detected on prismatic planes by the high-resolution microscopy, which cannot be explained using simple crystallographic considerations.

  7. LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES

    Institute of Scientific and Technical Information of China (English)

    J. Xu; R. Zhang; Y.P. Wang; X.Q. Xiu; S.L. Gu; B. Shen; Y. Shi; Z.G. Liu; Y.D. Zheng

    2001-01-01

    Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.

  8. Design of a Cryocooled Sapphire Oscillator for the Cassini Ka-Band Experiment

    Science.gov (United States)

    Dick, G. J.; Wang, R. T.

    1998-04-01

    We present design aspects of a cryogenic sapphire oscillator that is being developed for ultra-high short-term stability and low phase noise in support of the Cassini Ka-band (32-GHz) radio science experiment. With cooling provided by a commercial cryocooler instead of liquid helium, this standard is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3 x 10^(-15) (1 second ≤ τ ≤ 100 seconds) and a phase noise of -73 dBc/Hz at 1 Hz measured at 34 GHz. Test results are reported for several subsystems, including the cryocooler, vibration isolation system, and ruby compensating element.

  9. [Experiment results of conduction, spectral induced polarization and dielectric characteristics for chrome-contaminated soil].

    Science.gov (United States)

    Nai, Chang-Xin; Liu, Yu-Qiang; Liu, Hao-Rui; Dong, Lu

    2011-03-01

    The resistivity, complex resistivity and complex permittivity of the chrome-contaminated soil were studied. Under the different pollution concentration and water content in the soil samples conditions, the relations between the resistivity, complex resistivity and complex permittivity of the chrome-contaminated soil and water content and the concentration of pollution were analyzed. When adding chrome pollution with different concentrations and water content, the experimental results show that the resistivity and complex resistivity of all the soil samples decreased with the pollution concentration and water content increased; but the phase of complex resistivity, which reflects the soil's capacitance, decreased below the 20 kHz and increase above the 20 kHz frequency. The real part and imaginary part of complex resostivity increased with the increase of pollution concentration and water content. The concentration of chrome pollutions and water content were the two main factor to determine the soil electrical characteristics.

  10. Imitation Combined with a Characteristic Stimulus Duration Results in Robust Collective Decision-making in Sheep

    CERN Document Server

    Toulet, Sylvain; Bon, Richard; Peruani, Fernando

    2015-01-01

    For group-living animals, reaching consensus to stay cohesive is crucial for their fitness, particularly when collective motion starts and stops. Understanding the decision-making at individual and collective levels upon sudden disturbances is central in the study of collective animal behavior, and concerns the broader question of how information is distributed and evaluated in groups. Despite the relevance of the problem, well-controlled experimental studies that quantify the collective response of groups facing disruptive events are lacking. Here we study the behavior of groups of uninformed individuals subject to the departure and stop of a trained conspecific within small-sized groups. We find that the groups reach an effective consensus: either all uninformed individuals follow the trained one (and collective motion occurs) or none does it. Combining experiments and a simple mathematical model we show that the observed phenomena results from the interplay between simple mimetic rules and the characterist...

  11. Influence of Landfill Operation and Tropical Seasonal Variation on Leachate Characteristics: Results from Lysimeter Experiment

    Directory of Open Access Journals (Sweden)

    Islam M. Rafizul

    2012-01-01

    Full Text Available This study demonstrates the influence of lysimeter operational condition and tropical seasonal variation of leachate characteristics generated from municipal solid waste (MSW deposited in landfill lysimeter at KUET campus, Bangladesh. Three different situations of landfill were considered here as well as both the open dump lysimeter-A having a base liner and sanitary landfill lysimeter-B and C at two different types of cap liner were simulated. The leachate characteristics, leachate generation and climatic influence parameter had been continually monitored, from June 2008 to May 2010. This period covers both dry and rainy season. The leachate generation followed the rainfall pattern and the open dump lysimeter-A without top cover was recorded to have the highest leachate generation. Moreover, the open dump lysimeter-A had lower concentration and load of total kjeldahl nitrogen (TKN, ammonia nitrogen (NH4-N and dissolved organic carbon (DOC, while chemical oxygen demand (COD and biological oxygen demand (BOD5 concentration were higher compared with sanitary lysimeter-B and C. On the other hand, sanitary lysimeter-B, not only had lowest leachate generation, but also produced reasonably low COD and BOD5 concentration compared with open dump lysimeter-A. Based on evaluated results, it was also concluded that metal concentrations which were comparatively higher in leachate of open dump lysimeter were Ca and K, however, the heavy metal concentrations of Cd, Cu, Zn and Mn, and those apparently lower were metals of Na, Mg and Fe as well as heavy metals of Cr, Pb and Ni. However, significant release of heavy metals under open dump lysimeter was observed compared to sanitary lysimeter. Moreover, meaningful correlation between DOC and leaching of Cu and Pb was observed. Result reveals that lysimeter operational mode had direct effect on leachate quality. Finally, it can be concluded that the knowledge of leachate quality will be useful in planning and

  12. The charge state of iron implanted into sapphire

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.; Sklad, P.S.; White, C.W.; Farlow, G.C.; Perez, A.; Kornilios, N.; Marest, G.

    1987-08-01

    Several techniques (RBS, TEM, CEMS) have been used to characterize sapphire single crystals implanted with iron at room temperature to fluences of 10/sup 16/ to 10/sup 17/ ions cm/sup -2/. At low fluences the as-implanted iron is found mainly in the ferrous state. As the fluence is increased, Fe/sup 3 +/ and metallic iron clusters became dominant. There is a strong correlation between the probability of finding specific configurations of iron ions within four cation coordination shells and the relative amounts of each charge state observed. The superparamagnetic behavior of the clusters suggest that they are of the order of 2 nm in size but the large amount of irradiation-induced damage and residual stress has prevented their imaging by TEM. 13 refs., 7 figs.

  13. Numerical computation of sapphire crystal growth using heat exchanger method

    Science.gov (United States)

    Lu, Chung-Wei; Chen, Jyh-Chen

    2001-05-01

    The finite element software FIDAP is employed to study the temperature and velocity distribution and the interface shape during a large sapphire crystal growth process using a heat exchanger method (HEM). In the present study, the energy input to the crucible by the radiation and convection inside the furnace and the energy output through the heat exchanger is modeled by the convection boundary conditions. The effects of the various growth parameters are studied. It is found that the contact angle is obtuse before the solid-melt interface touches the sidewall of the crucible. Therefore, hot spots always appear in this process. The maximum convexity decreases significantly when the cooling-zone radius (RC) increases. The maximum convexity also decreases significantly as the combined convection coefficient inside the furnace (hI) decreases.

  14. Adapting a Cryogenic Sapphire Oscillator for Very Long Baseline Interferometry

    CERN Document Server

    Doeleman, Sheperd; Rogers, Alan; Hartnett, John; Tobar, Michael; Nand, Nitin; 10.1086/660156

    2011-01-01

    Extension of very long baseline interferometry (VLBI) to observing wavelengths shorter than 1.3mm provides exceptional angular resolution (~20 micro arcsec) and access to new spectral regimes for the study of astrophysical phenomena. To maintain phase coherence across a global VLBI array at these wavelengths requires that ultrastable frequency references be used for the heterodyne receivers at all participating telescopes. Hydrogen masers have traditionally been used as VLBI references, but atmospheric turbulence typically limits (sub) millimeter VLBI coherence times to ~1-30 s. Cryogenic Sapphire Oscillators (CSO) have better stability than Hydrogen masers on these time scale and are potential alternatives to masers as VLBI references. Here, We describe the design, implementation and tests of a system to produce a 10 MHz VLBI frequency standard from the microwave (11.2 GHz) output of a CSO. To improve long-term stability of the new reference, the CSO was locked to the timing signal from the Global Positionin...

  15. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  16. Ignition and Combustion Characteristics of Pure Bulk Metals: Normal-Gravity Test Results

    Science.gov (United States)

    Abbud-Madrid, A.; Fiechtner, G. J.; Branch, M. C.; Daily, J. W.

    1994-01-01

    An experimental apparatus has been designed for the study of bulk metal ignition under elevated, normal and reduced gravity environments. The present work describes the technical characteristics of the system, the analytical techniques employed, the results obtained from the ignition of a variety of metals subjected to normal gravity conditions and the first results obtained from experiments under elevated gravity. A 1000 W xenon short-arc lamp is used to irradiate the top surface of a cylindrical metal specimen 4 mm in diameter and 4 mm high in a quiescent pure-oxygen environment at 0.1 MPa. Iron, titanium, zirconium, magnesium, zinc, tin, and copper specimens are investigated. All these metals exhibit ignition and combustion behavior varying in strength and speed. Values of ignition temperatures below, above or in the range of the metal melting point are obtained from the temperature records. The emission spectra from the magnesium-oxygen gas-phase reaction reveals the dynamic evolution of the ignition event. Scanning electron microscope and x-ray spectroscopic analysis provide the sequence of oxide formation on the burning of copper samples. Preliminary results on the effect of higher-than-normal gravity levels on the ignition of titanium specimens is presented.

  17. Characteristics associated with being overweight among the population of Ukraine, results of 2000 survey

    Directory of Open Access Journals (Sweden)

    Chagarna, Natalia

    2011-05-01

    Full Text Available BACKGROUND. Being overweight is considered among major risk factors of chronic non-communicable diseases. The goal of this study was to investigate main determinants associated with being overweight and obese among the population of Ukraine in transitional period.METHODS. Data from the survey “Health and Well-being in the Transitions” (2000 were used. Body mass index (BMI was used to estimate the level of overweight. Binary dependent variable was computed by setting BMI of 25 as the borderline between normal weight and overweight. Risk of being overweight was compared by educational groups, demographic characteristics, occupation, level of physical activity, and behavioral and eating habits, after adjustment for age and stratification by gender.RESULTS. Among men, those overweight were less likely to smoke (adjusted odds ratio 2,5, while more likely to eat meat more often (AOR=2,3 and to consume more vegetable oil. However, among women being overweight was associated with eating more potatoes (AOR = 0,4 and with frequent vodka intake (AOR = 1,7. Those women who drank beer were less likely to be overweight (AOR = 0,3. Risk of being overweight was related to occupation: those unemployed, housekeepers, and self-employed people were less likely to be overweight than those employed with salaries. Obesity risk was greater in those older than 30. Education and physical activity did not show significant associations with risk of being overweight.CONCLUSION. Eating habits, occupational status, and unhealthy habits were associated with obesity among men and women in different ways. Age was found to be an important factor of being overweight both for males and females. Some of the associated characteristics may be considered causes of being overweight and the others as consequences.

  18. Advances in Trace Element “Fingerprinting” of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    Directory of Open Access Journals (Sweden)

    F. Lin Sutherland

    2014-12-01

    Full Text Available Mogok gem corundum samples from twelve localities were analyzed for trace element signatures (LA-ICP-MS method and oxygen isotope values (δ18O, by laser fluorination. The study augmented earlier findings on Mogok gem suites that suggested the Mogok tract forms a high vanadium gem corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents. Oxygen isotope values (δ18O for the ruby and high Si-Ca-Ga corundum (20‰–25‰ and for sapphire (10‰–20‰ indicate typical crustal values, with values >20‰ being typical of carbonate genesis. The high Si-Ca-Ga ruby has high chromium (up to 3.2 wt % Cr and gallium (up to 0. 08 wt % Ga compared to most Mogok ruby (<2 wt % Cr; <0.02 wt % Ga. In trace element ratio plots the Si-Ca-Ga-rich corundum falls into separate fields from the typical Mogok metamorphic fields. The high Ga/Mg ratios (46–521 lie well within the magmatic range (>6, and with other features suggest a potential skarn-like, carbonate-related genesis with a high degree of magmatic fluid input The overall trace element results widen the range of different signatures identified within Mogok gem corundum suites and indicate complex genesis. The expanded geochemical platform, related to a variety of metamorphic, metasomatic and magmatic sources, now provides a wider base for geographic typing of Mogok gem corundum suites. It allows more detailed comparisons with suites from other deposits and will assist identification of Mogok gem corundum sources used in jewelry.

  19. Bariatric surgery results: reporting clinical characteristics and adverse outcomes from an integrated healthcare delivery system.

    Science.gov (United States)

    Li, Robert A; Fisher, David P; Dutta, Sanjoy; O'Brien, Rebecca M; Ackerson, Lynn M; Sorel, Michael E; Sidney, Stephen

    2015-01-01

    Limited data have been reported on bariatric surgery within a large, high-volume regional multicenter integrated healthcare delivery system. Review clinical characteristics and short- and intermediate-term outcomes and adverse events from a bariatric surgery program within an integrated healthcare delivery system. Single high-volume, multicenter regional integrated healthcare delivery system. Adult patients who underwent primary bariatric surgery during 2010-2011 were reviewed. Clinical characteristics, outcomes, and weight loss results were extracted from the electronic medical record. A total of 2399 patients were identified within the study period. The 30-day rates of clinical outcomes for Roux-en-Y gastric bypass (RYGB; n = 1313) and sleeve gastrectomy (SG; n = 1018) were 2.9% for readmission, 3.0% for major complications, .8% for reoperation, and 0% for mortality. One-year and 2-year weight loss results were as follows: percent weight loss (%WL) was 31.4 (±SD 8.5) and 34.2±12.0% for SG and 34.1±9.3 and 39.1±11.9 for RYGB; percent excess weight loss (%EBWL) was 64.2±18.0 and 69.8±23.7 for SG and 68.0±19.3 and 77.8±23.7 for RYGB; percent excess body mass index loss (%EBMIL) was 72.9±21.0 and 77.7±22.4 for SG and 76.6±22.1% and 85.6±21.6 for RYGB. Follow-up for each procedure at 1 year was 76% for SG (n = 778) and 80% for RYGB (n = 1052) and at 2 years was 65% for SG (n = 659) and 67% for RYGB (n = 875). A large regional high-volume multicenter bariatric program within an integrated healthcare delivery system can produce excellent short-term results with low rates of short- and intermediate-term adverse outcomes. Copyright © 2015 American Society for Bariatric Surgery. Published by Elsevier Inc. All rights reserved.

  20. Clinical Characteristics of Bowel Obstruction in Southern Iran; Results of a Single Center Experience

    Directory of Open Access Journals (Sweden)

    Majid Akrami

    2015-01-01

    Full Text Available Objective: To determine the epidemiological, clinical, laboratory characteristics as well as outcome of 411 patients with bowel obstruction in Southern Iran. Methods: This was a cross-sectional study being performed in Shahid Faghihi hospital of Shiraz between 2006 and 2012. We reviewed the medical charts of the 411 patients with initial diagnosis of bowel obstruction who were admitted to our center during the study period. The patients’ demographic, clinical and laboratory findings as well as their management and outcome was recorded in data gathering forms. The data were then analyzed according to the outcome and clinical characteristics. Results: Among the 411 patients with initial diagnosis of bowel obstruction, 253 (61.5% were men and 158 (38.5% were women. The mean age of the patients was 48.2±19.7 years. Besides, 73.6% were observed and 26.4% were operated. Those who were operated had those who underwent operation had significantly lower frequency of obstipation (28.1% vs. 71.9%; p=0.045 and abdominal distention (32.3% vs. 67.7%; p=0.007. Intraoperative findings included adhesion band formation in 50 (48.1%, mass 18 (17.3%, and hernia 7 (6.7%. We found that the frequency of malignancy was significantly higher in those who were managed conservatively compared to those undergoing operation (64.3% vs. 35.7%; p=0.042. The mean hospital stay was significantly higher in those who underwent operation (8.1±7.5 vs. 2.6±2.2 days; p=0.035. Conclusion: The results of this study demonstrates although some signs and symptoms, such as abdominal pain, vomiting, abdominal tenderness, abdominal distention, and obstipation, were more common among the patients with bowel obstruction, they were not sensitive and specific enough for definite diagnosis. Due to the lack of positive predictive value of clinical signs and symptoms in diagnosis of bowel obstruction, a reasonable and logical modality is needed for bowel obstruction diagnosis with better

  1. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

    Science.gov (United States)

    Adikimenakis, A.; Lotsari, A.; Dimitrakopulos, G. P.; Kehagias, Th.; Aretouli, K. E.; Tsagaraki, K.; Androulidaki, M.; Komninou, Ph.; Georgakilas, A.

    2015-06-01

    The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structural characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5-6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.

  2. Simulation of SAW Humidity Sensors Based on ( 11 2 ¯ 0 ) ZnO/R-Sapphire Structures.

    Science.gov (United States)

    Lan, Xiao-Dong; Zhang, Shu-Yi; Fan, Li; Wang, Yan

    2016-11-02

    The characteristics of two types of surface acoustic waves SAWs (Rayleigh waves and Love waves) propagating in bilayered structures of ( 11 2 ¯ 0 ) ZnO/R-sapphire are simulated by a finite element method (FEM) model, in which both SAWs have crossed propagation directions. Furthermore, based on the bilayered structures, the frequency responses of Rayleigh wave and Love wave humidity sensors are also simulated. Meanwhile, the frequency shifts, insertion loss changes and then the sensitivities of both humidity sensors induced by the adsorbed water layer perturbations, including the mechanical and electrical factors, are calculated numerically. Generally, the characteristics and performances of both sensors are strongly dependent on the thickness of the ZnO films. By appropriate selecting the ratio of the film thickness to SAW wavelength for each kind of the sensors, the performances of both sensors can be optimized.

  3. Simulation of SAW Humidity Sensors Based on ( 11 2 ¯ 0 ZnO/R-Sapphire Structures

    Directory of Open Access Journals (Sweden)

    Xiao-Dong Lan

    2016-11-01

    Full Text Available The characteristics of two types of surface acoustic waves SAWs (Rayleigh waves and Love waves propagating in bilayered structures of ( 11 2 ¯ 0 ZnO/R-sapphire are simulated by a finite element method (FEM model, in which both SAWs have crossed propagation directions. Furthermore, based on the bilayered structures, the frequency responses of Rayleigh wave and Love wave humidity sensors are also simulated. Meanwhile, the frequency shifts, insertion loss changes and then the sensitivities of both humidity sensors induced by the adsorbed water layer perturbations, including the mechanical and electrical factors, are calculated numerically. Generally, the characteristics and performances of both sensors are strongly dependent on the thickness of the ZnO films. By appropriate selecting the ratio of the film thickness to SAW wavelength for each kind of the sensors, the performances of both sensors can be optimized.

  4. Tidal characteristics in the Wenzhou offshore waters and changes resulting from the Wenzhou Shoal Reclamation Project

    Science.gov (United States)

    Bao, Min; Bao, Xianwen; Yu, Huaming; Ding, Yang

    2015-12-01

    The Wenzhou Shoal Reclamation Project is the core part of Wenzhou Peninsula Engineering which is a big comprehensive development project to expand the city space. The dynamics of the surrounding area was proved to suffer little effect in response to the Lingni north dyke since it was built approximately along the current direction. Therefore, this paper focuses firstly on the tidal characteristics in the Wenzhou and Yueqing bays with the Lingni north dyke being built and then on the changes resulting from the implementation of the on-going Wenzhou Shoal Reclamation Project (WSRP) which will reclaim land from the whole Wenzhou Shoal. To simulate the tidal dynamics, a high-resolution coastal ocean model with unstructured triangular grids was set up for the Wenzhou and Yueqing Bays. The model resolved the complicated tidal dynamics with the simulated tidal elevation and current in good agreement with observations. In the study area, M2 is the predominant tidal component, which means the tide is semidiurnal. The new reclamation project hardly affects the Yueqing Bay and the open ocean, but there are concentrated effects on the mouth of the southern branch of the Oujiang River and the southwest of Wenzhou Shoal. This study provides an indicative reference to the local government and helps to weigh the advantages and disadvantages of the project.

  5. Characteristics of wastes from electric and electronic equipment in Greece: results of a field survey.

    Science.gov (United States)

    Karagiannidis, Avraam; Perkoulidis, George; Papadopoulos, Agis; Moussiopoulos, Nicolas; Tsatsarelis, Thomas

    2005-08-01

    The lifespan of electric and electronic equipment is becoming shorter and the amount of related waste is increasing. This study aimed to contribute to the knowledge about qualitative and quantitative characteristics of such wastes in Greece. Specifically, results are presented from a field survey, which took place in the city of Thessaloniki, Greece, during the year 2002. The survey was conducted with suitable questionnaires in department stores and in households of various municipalities. Household appliances were grouped as follows: (A) large (refrigerator, freezer, washing machine, clothes dryer, electric cooker, microwave oven, electric heater), (B) small (vacuum cleaner, electric iron, hair dryer), (C) information technology and telecommunication equipment (PC, laptop, printer, phone) and (D) consumer equipment (radio, TV, video, DVD, console). The analysis indicated that the lifespan of all new goods is gradually reducing (apart from refrigerators, for which the lifespan was surprisingly found to be increasing) and provided linearized functions for predicting the lifespan, according to the year of manufacture, for certain large appliances.

  6. Experimental results obtained with the simulated cold moderator system. System characteristics and technical issues

    CERN Document Server

    Aso, T; Hino, R; Kaminaga, M; Kinoshita, H; Takahashi, T

    2002-01-01

    The Japan Atomic Energy Research Institute and the High Energy Accelerator Research Organization have been developing a Mega-Watt scale spallation target system. In the system, neutrons generated in a target are sorted out their energy to the proper values in liquid-hydrogen moderators. Then, the liquid-hydrogen is forced to circulate in order to suppress hydrogen temperature increase. In the operation of moderators, it is very important to establish a safety protection system against emergency shutdown of the accelerator or accidents of the cold moderator system. In order to obtain a technical data for design and safety review of the liquid-hydrogen system, we have fabricated an experimental apparatus simulated the cold moderator system using liquid nitrogen (max. 1.5 MPa, mini. 77 K) instead of liquid hydrogen. The experiments on a controllability of the system were carried out to investigate dynamic characteristics of the system. This report presents the experimental results and technical issues for the co...

  7. Characteristics and Treatment Results of 5 Patients with Fibrous Dysplasia and Review of the Literature

    Directory of Open Access Journals (Sweden)

    Nilufer Ozdemir Kutbay

    2015-01-01

    Full Text Available Aim. Fibrous dysplasia is a rare bone disease caused by missense mutation leading to abnormal fibroblast and osteoblast proliferation and increased bone resorption. FD can present in monostotic or polyostotic forms. About 3% of FD could be in association with McCune-Albright syndrome (MAS. Because FD is a rare disease, there is limited data in the literature about characteristics of disease and response to treatment. Methods. We present our five cases of FD with general properties and their responses to medical treatment. Results. Two of our patients had polyostotic and three had monostotic FD. One of the polyostotic patients had MAS. One of our patients had surgery for femur fractures, facial asymmetry, and findings of compression. Four patients were given pamidronate; one was given zoledronic acid as bisphosphonate treatment. Bone pain was relieved in all patients with medical treatment. Conclusion. There was a decrease in bone turnover markers to some degree with medical treatment but no radiological improvement was observed.

  8. Characteristics of Bone Injuries Resulting from Knife Wounds Incised with Different Forces.

    Science.gov (United States)

    Humphrey, Caitlin; Kumaratilake, Jaliya; Henneberg, Maciej

    2017-02-23

    The aim of this research was to experimentally determine the characteristics of incised bone wounds, which are commonly found in defense injuries. A specially constructed pivoting arm device was used to inflict wounds with controlled forces and direction. Five knives were selected to inflict the wounds on porcine forelimbs. Eight incised wounds were made per knife per force. A larger knife and a greater force caused longer and wider bone wounds. Comparisons of individual knives at the two forces produced varying results in the bone wounds. A correlation was seen between the force and the length (r = 0.69), width (r = 0.63), and depth (r = 0.57) of bone wounds. Serrated-edge and nonserrated knives can be distinguished from the appearance of the wound. The outcomes may be applicable in forensic investigations to ascertain the forces associated with incised wounds and identify the specific knife used. © 2017 American Academy of Forensic Sciences.

  9. Experimental results obtained with the simulated cold moderator system. System characteristics and technical issues

    Energy Technology Data Exchange (ETDEWEB)

    Aso, Tomokazu; Kaminaga, Masanori; Haga, Katsuhiro; Kinoshita, Hidetaka; Takahashi, Toshio; Hino, Ryutaro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    2002-12-01

    The Japan Atomic Energy Research Institute and the High Energy Accelerator Research Organization have been developing a Mega-Watt scale spallation target system. In the system, neutrons generated in a target are sorted out their energy to the proper values in liquid-hydrogen moderators. Then, the liquid-hydrogen is forced to circulate in order to suppress hydrogen temperature increase. In the operation of moderators, it is very important to establish a safety protection system against emergency shutdown of the accelerator or accidents of the cold moderator system. In order to obtain a technical data for design and safety review of the liquid-hydrogen system, we have fabricated an experimental apparatus simulated the cold moderator system using liquid nitrogen (max. 1.5 MPa, mini. 77 K) instead of liquid hydrogen. The experiments on a controllability of the system were carried out to investigate dynamic characteristics of the system. This report presents the experimental results and technical issues for the construction of a practical liquid-hydrogen moderator system of the Mega-Watt scale target system. (author)

  10. A first-principles study on Al-doped ZnO growth polarity on sapphire (0001) surface

    Science.gov (United States)

    Yang, Ping; Gao, Qian; Hu, Zhen-Peng; Zhang, Li-Xin

    2016-06-01

    Based on the first-principles method, the polarity inversion mechanism of Al-doped ZnO grown on sapphire (0001) substrate was investigated. This study revealed that the Al dopant tends to float on the surface of the buffer layer and leads to form ZnO nucleation islands of Zn-polarity without changing in-plane orientation. Finally, these islands evolve to wall-like nanostructure with Zn-termination. The results can explain the reason of the polarity inversion phenomenon in the experiment and supply more information for controlling the ZnO growth polarity.

  11. Imitation Combined with a Characteristic Stimulus Duration Results in Robust Collective Decision-Making.

    Directory of Open Access Journals (Sweden)

    Sylvain Toulet

    Full Text Available For group-living animals, reaching consensus to stay cohesive is crucial for their fitness, particularly when collective motion starts and stops. Understanding the decision-making at individual and collective levels upon sudden disturbances is central in the study of collective animal behavior, and concerns the broader question of how information is distributed and evaluated in groups. Despite the relevance of the problem, well-controlled experimental studies that quantify the collective response of groups facing disruptive events are lacking. Here we study the behavior of small-sized groups of uninformed individuals subject to the departure and stop of a trained conspecific. We find that the groups reach an effective consensus: either all uninformed individuals follow the trained one (and collective motion occurs or none does. Combining experiments and a simple mathematical model we show that the observed phenomena results from the interplay between simple mimetic rules and the characteristic duration of the stimulus, here, the time during which the trained individual is moving away. The proposed mechanism strongly depends on group size, as observed in the experiments, and even if group splitting can occur, the most likely outcome is always a coherent collective group response (consensus. The prevalence of a consensus is expected even if the groups of naives face conflicting information, e.g. if groups contain two subgroups of trained individuals, one trained to stay and one trained to leave. Our results indicate that collective decision-making and consensus in (small animal groups are likely to be self-organized phenomena that do not involve concertation or even communication among the group members.

  12. Imitation Combined with a Characteristic Stimulus Duration Results in Robust Collective Decision-Making.

    Science.gov (United States)

    Toulet, Sylvain; Gautrais, Jacques; Bon, Richard; Peruani, Fernando

    2015-01-01

    For group-living animals, reaching consensus to stay cohesive is crucial for their fitness, particularly when collective motion starts and stops. Understanding the decision-making at individual and collective levels upon sudden disturbances is central in the study of collective animal behavior, and concerns the broader question of how information is distributed and evaluated in groups. Despite the relevance of the problem, well-controlled experimental studies that quantify the collective response of groups facing disruptive events are lacking. Here we study the behavior of small-sized groups of uninformed individuals subject to the departure and stop of a trained conspecific. We find that the groups reach an effective consensus: either all uninformed individuals follow the trained one (and collective motion occurs) or none does. Combining experiments and a simple mathematical model we show that the observed phenomena results from the interplay between simple mimetic rules and the characteristic duration of the stimulus, here, the time during which the trained individual is moving away. The proposed mechanism strongly depends on group size, as observed in the experiments, and even if group splitting can occur, the most likely outcome is always a coherent collective group response (consensus). The prevalence of a consensus is expected even if the groups of naives face conflicting information, e.g. if groups contain two subgroups of trained individuals, one trained to stay and one trained to leave. Our results indicate that collective decision-making and consensus in (small) animal groups are likely to be self-organized phenomena that do not involve concertation or even communication among the group members.

  13. Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In this paper, large-sized sapphire (Φ230×210 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching, scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101~8.0×102 cm-2, in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally, the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.

  14. Advances in Trace Element "Fingerprinting" of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    National Research Council Canada - National Science Library

    F Lin Sutherland; Khin Zaw; Sebastien Meffre; Tzen-Fui Yui; Kyaw Thu

    2015-01-01

    ... corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents...

  15. A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire

    Science.gov (United States)

    Ravadgar, P.; Horng, R. H.; Ou, S. L.

    2012-12-01

    A clear visualization of the origin and characteristics of threading dislocations (TDs) of GaN-based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried out. Special experimental set up and chemical etchant along with field emission scanning electron microscopy are employed to study the dynamics of GaN TDs at different growth stages. Cross-sectional transmission electron microscopy analysis visualized the formation of edge TDs is arising from extension of coalescences at boundaries of different tilting-twining nucleation grains "mosaic growth." Etch pits as representatives of edge TDs are in agreement with previous theoretical models and analyses of TDs core position and characteristics.

  16. Newly designed multilayer thin film mirror for dispersion compensation in Ti: sapphire femtosecond lasers

    Institute of Scientific and Technical Information of China (English)

    Chunyan Liao; Jianda Shao; Jianbing Huang; Zhengxiu Fan; Hongbo He

    2005-01-01

    @@ There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

  17. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  18. Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis

    Science.gov (United States)

    Bletskan, D. I.; Bratus', V. Ya.; Luk'yanchuk, A. R.; Maslyuk, V. T.; Parlag, O. A.

    2008-07-01

    Sapphire (α-Al2O3) single crystals grown using the Verneuil and Kyropoulos methods have been analyzed using electron paramagnetic resonance and γ-ray spectroscopy with 12-MeV bremsstrahlung excitation. It is established that uncontrolled impurities in the final sapphire single crystals grown by the Kyropoulos method in molybdenum-tungsten crucibles are supplied both from the initial materials and from the furnace and crucible materials

  19. Jones calculus modeling and analysis of the thermal distortion in a Ti:sapphire laser amplifier.

    Science.gov (United States)

    Cho, Seryeyohan; Jeong, Jihoon; Yu, Tae Jun

    2016-06-27

    The mathematical modeling of an anisotropic Ti:sapphire crystal with a significant thermal load is performed. The model is expressed by the differential Jones matrix. A thermally induced distortion in the chirped-pulse amplification process is shown by the solution of the differential Jones matrix. Using this model, the thermally distorted spatio-temporal laser beam shape is calculated for a high-power and high-repetition-rate Ti:sapphire amplifier.

  20. High power all-solid-state quasi-continuous-wave tunable Ti: sapphire laser system

    Institute of Scientific and Technical Information of China (English)

    Lei Zou; Xin Ding; Yue Zou; Hongmei Ma; Wuqi Wen; Peng Wang; Jianquan Yao

    2005-01-01

    This paper reports a high power, all-solid-state, quasi-continuous-wave tunable Ti:sapphire laser system pumped by laser diode (LD) pumped frequency-doubled Nd:YAG laser. The maximum tuned output power of 4.2 W (797 nm) and tuned average power of 3.7 W were achieved when fixing the Ti:sapphire broadband output power at 5.0 W and applying 750-850 nm broadband coated mirror.

  1. Aleutian disease of mink: the antibody response of sapphire and pastel mink to Aleutian disease virus.

    Science.gov (United States)

    Bloom, M E; Race, R E; Hadlow, W J; Chesebro, B

    1975-10-01

    The specific antiviral antibody response of sapphire and pastel mink to Pullman strain of ADV has been examined. Sapphire mink inoculated with from 300,000-3 LD50 developed high levels of specific antibody and AD. Pastel mink inoculated with parallel doses of ADV also produced antibody but did not develop AD. The low incidence of AD in pastel mink inoculated with Pullman strain of ADV is probably related to factors other than antiviral antibody.

  2. Interface defects in GaN/sapphire studied using Rutherford backscattering spectroscopy and channeling

    Indian Academy of Sciences (India)

    S K Sinha; P K Barhai

    2004-06-01

    GaN on sapphire was grown by MOCVD technique. Rutherford backscattering spectra together with channeling along [0 0 0 1] axis were recorded to study the defects at the interface. Detailed calculation shows that the defects at GaN/sapphire interface are due to dislocations which are distributed into the whole thickness of the film and are mainly aligned on the growth direction.

  3. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Joucken, Frédéric, E-mail: frederic.joucken@unamur.be; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-15

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10{sup 12} cm{sup −2}) together with quite low carrier mobility (∼1350 cm{sup 2}/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  4. Cellular and humoral antibody responses of normal pastel and sapphire mink to goat erythrocytes.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J; Munoz, J J

    1971-02-01

    This study was undertaken to determine whether normal sapphire and royal pastel mink differ immunologically at the cellular and humoral levels. Two days after primary intraperitoneal (ip) inoculation of goat erythrocytes (GE), essentially no 19 or 7S plaque-forming cells (PFC) per 10(6) cells were detected in spleen or in abdominal and peripheral lymph nodes of either color phase. On the 4th day, more 19S PFC were detected in pastel than in sapphire tissues; pastel tissues also contained 7S PFC, whereas essentially none was present in sapphires until the 6th day. After an ip booster inoculation, the number of PFC was markedly different between the two color phases. These differences were most apparent in spleen and peripheral lymph nodes. In parallel with differences observed in PFC responses between the color phases, total hemolysin and 2-mercaptoethanol-resistant hemolysin titers of pastels exceeded those of sapphires in all but one interval after the primary, and at every interval after the booster, inoculation. These data indicate that sapphire mink are not immunological cripples, nor are they immunologically hyperactive, but that differences do exist between sapphire and royal pastel mink, especially in the response to booster injections of GE.

  5. TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon

    Energy Technology Data Exchange (ETDEWEB)

    Cayrel, F.; Menard, O.; Alquier, D. [Laboratoire de Microelectronique de Puissance, Universite de Tours (France); Yvon, A.; Collard, E. [STMicroelectronics, Tours (France); Thierry-Jebali, N.; Brylinsky, C. [Laboratoire des Multimateriaux et Interfaces, Universite Claude Bernard Lyon1, Lyon (France)

    2012-06-15

    In this work, the Ti/Al Ohmic contact quality on n-type gallium nitride (GaN) films has been studied as a function of different process parameters such as surface cleaning procedure, etching, thickness of the deposited layers or annealing conditions. GaN epilayers, with uniform doping concentration from 1 x 10{sup 16} to 5.8 x 10{sup 18} at./cm{sup 3} were grown on sapphire or silicon substrates using AlN and/or AlGaN buffer layers. Electrical characterizations were made using circular transfer length method (cTLM) patterns with a four-probe equipment. Specific contact resistance (SCR) was then extracted from current-voltage (I-V) characteristics, for all the process conditions. Contact structures depending on experiment parameters were studied by means of (scanning) transmission electronic microscopy (STEM-TEM). Our results reveal that process parameters such as surface treatment have a lower impact than annealing temperature or metal thickness and annealing duration. Finally, SCR values of 1 x 10{sup -6} {omega} cm{sup 2} can be reproducibly achieved. Moreover, good Ohmic contacts have been obtained on etched surfaces or on low-doped layers implanted with Si. This low value demonstrates a good Ohmic contact and this large parameter process window is of high interest for future device fabrication based on GaN (planar or mesa structures). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Precision measurement of a low-loss cylindrical dumbbell-shaped sapphire mechanical oscillator using radiation pressure

    Science.gov (United States)

    Bourhill, J.; Ivanov, E.; Tobar, M. E.

    2015-08-01

    We present first results from a number of experiments conducted on a 0.53-kg cylindrical dumbbell-shaped sapphire crystal. Here we report on an optomechanical experiment utilizing a modification to the typical cylindrical architecture. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects result in parametric frequency modulation of resonant microwave whispering gallery modes that are simultaneously excited within the crystal. A microwave readout system is implemented, allowing extremely low noise measurements of this frequency modulation near our modes of interest, having a phase noise floor of -165 dBc/Hz at 100 kHz. Fine tuning of the crystal's suspension has allowed for the optimization of mechanical quality factors in preparation for cryogenic experiments, with a value of Q =8 ×107 achieved at 127 kHz. This results in a Q ×f product of 1013, equivalent to the best measured values in a macroscopic sapphire mechanical system. Results are presented that demonstrate the excitation of mechanical modes via radiation pressure force, allowing an experimental method of determining the transducer's displacement sensitivity d f /d x and calibrating the system. Finally, we demonstrate parametric backaction phenomenon within the system. These are all important steps towards the goal of achieving quantum limited measurements of a kilogram-scale macroscopic device for the purpose of detecting deviations from standard quantum theory resulting from quantum gravitational effects.

  7. Influence of underwater light fields on pigment characteristics in the Baltic Sea - results of statistical analysis

    Directory of Open Access Journals (Sweden)

    Joanna Stoń-Egiert

    2012-02-01

    decreasing trend with increasing τ for Baltic data, which is characteristic of photoprotective pigments and the reverse of the trend in oceans. In the case of the Cchl c tot approximations, the logarithmic statistical error is lower for Baltic waters than for case 1waters: σ_ = 34.6% for Baltic data and σ_ = 39.4% for ocean data. In relation to photoprotective carotenoids (CPPC, σ_ takes a value of 38.4% forBaltic waters and 36.1% for ocean waters. The relative errors of the approximated concentrations of different pigment groups are larger than those obtainedfor ocean waters. The only exception is chlorophyll c, for which the logarithmic statistical error is about 8.8% lower (σ_ = 34.6% for Baltic waters and 38.2% for ocean waters. Analysis of the errors resulting from the approximations of the photoprotective carotenoid content, depending on the energy characteristicsof the underwater irradiance in the short-range part of PAR, showed that the relative errors are 1.3 times higher for Baltic waters than for ocean waters: σ_ = 38.4%for Baltic waters and 32.0% for ocean waters.

  8. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.

  9. Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE

    Institute of Scientific and Technical Information of China (English)

    LU Dian-qing; LI Xin-hua; LIU Xue-dong

    2005-01-01

    The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 min, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.

  10. Description of selected characteristics of familial glioma patients – Results from the Gliogene Consortium

    DEFF Research Database (Denmark)

    Sadetzki, Siegal; Bruchim, Revital; Oberman, Bernice

    2013-01-01

    While certain inherited syndromes (e.g. Neurofibromatosis or Li-Fraumeni) are associated with an increased risk of glioma, most familial gliomas are non-syndromic. This study describes the demographic and clinical characteristics of the largest series of non-syndromic glioma families ascertained...

  11. Baseline characteristics and management of patients with splanchnic vein thrombosis: Results of an international registry

    NARCIS (Netherlands)

    Ageno, W.; Riva, N.; Schulman, S.; Bang, S.-M.; Sartori, M.T.; Grandone, E.; Beyer, J.; Pasca, S.; Di Minno, D.; Duce, R.; Malato, A.; Santoro, R.; Poli, D.; Verhamme, P.; Passamonti, S.; Kamphuisen, P.; Alatri, A.; Becattini, C.; Bucherini, E.; Piana, A.; De Stefano, V.; Vidili, G.; Bazzan, M.; Di Nisio, M.; Dentali, F.; Martinelli, I.; Barillari, G.; Poggio, R.; Colaizzo, D.; Vaccarino, A.

    2012-01-01

    Background Splanchnic vein thrombosis (SVT) is a challenging disease. The aim of this international registry was to describe the characteristics of a large cohort of patients with SVT and their management in clinical practice. Patients and Methods Consecutive patients with objectively diagnosed SVT

  12. Do Teacher Characteristics Matter? New Results on the Effects of Teacher Preparation on Student Achievement

    Science.gov (United States)

    Kukla-Acevedo, Sharon

    2009-01-01

    Research fairly consistently demonstrates that teachers are an important measurable factor in student learning, yet few teacher characteristics are shown to be consistently related to student achievement. Using a state administrative dataset that matches individual students to their teachers over time, I find that math teachers' undergraduate…

  13. Q-Switching the Flash Ti: Sapphire Laser

    Energy Technology Data Exchange (ETDEWEB)

    Cone, Kelly

    2003-09-05

    The Stanford Linear Accelerator Center (SLAC) uses a flash lamp pumped Ti:Sapphire laser to generate the electron beam inside of the Linac. This laser system was installed at the SLAC Polarized Light Source in 1993. During the past, the system has been upgraded in several steps (eg. installation of Rhodium coated reflectors, cavity redesign, and remote controlled wavelength tunability). Q-switching the laser cavity to increase the peak pulse energy was successfully investigated and further improves the capabilities of the laser system for future polarized beam experiments. Two Pockels cells were used to perform the Q-switch and various diagnostics were used to characterize the modified laser pulse. The timing in relation to the laser trigger, pulse width, and pulse shape applied to the Q-switching Pockels cells (PC) were optimized. No damage to the laser cavity or optical elements occurred. At optimal conditions of Q-switching, the pulse energy of the laser increased from 0.4 mJ to over 3 mJ in a 300 ns pulse. The Q-switched pulse energy can be further increased by extending the hold-off pulse applied to the PC. The laser pulse produced by the Q-switch was long enough (full width half maximum (FWHM) > 200 ns) for pulse shaping and demonstrated good intensity stability (< 0.5% jitter). The increase in output power suggests that Q-switching will be used for future accelerator projects.

  14. Skin thermal response to sapphire contact and cryogen spray cooling: a comparative study based on measurements in a skin phantom

    Science.gov (United States)

    Torres, Jorge H.; Nelson, J. Stuart; Tanenbaum, B. S.; Anvari, Bahman

    2000-05-01

    Non-specific thermal injury to the epidermis may occur as a result of laser treatment of cutaneous hypervascular malformations (e.g. port wine stains) and other dermatoses. Methods to protect the epidermis from thermal injury include sapphire contact cooling (SCC) and cryogen spray cooling (CSC). Evaluation of the skin thermal response to either cooling method and better understanding of the heat transfer process at the skin surface are essential for further optimization of cooling technique during laser therapy. We present internal temperature measurements in an epoxy resin phantom in response to both SCC and CSC, and use the results in conjunction with a mathematical model to predict the temperature distributions within human skin. Based on our results, a conductive heat transfer process at the skin interface appears to be the primary mechanism for both SCC and CSC. In the case of CSC, 'film cooling' rather than 'evaporative cooling' seems to be the dominant mode during the spurt duration. Currently, due to the lower temperature of the cryogen film and its shorter time of application, CSC produces larger temperature reductions at the skin surface and smaller temperature reductions at depths greater than 200 micrometer (i.e., higher spatial selectivity) when compared to SCC. However, SCC can potentially induce temperature reductions comparable to those produced by CSC if a sapphire temperature similar to that for a cryogen could be achieved in practice.

  15. Occlusal characteristics in 3-year-old children – results of a birth cohort study

    OpenAIRE

    Wagner, Yvonne; Heinrich-Weltzien, Roswitha

    2015-01-01

    Background Aim of this prospective study was to determine prevalence of malocclusion and associated risk factors in 3-year-old Thuringian children. Methods Subjects (n = 377) were participants in a regional oral health programme, a birth cohort study with the aim to prevent caries (German Clinical Trials Register DRKS00003438). Children received continuous dental care since birth. Occlusal characteristics (overjet, overbite, anterior open bite, canine relationship and posterior crossbite) wer...

  16. Electroluminescence from nonpolar n-ZnO/p-AlGaN heterojunction light-emitting diode on r-sapphire

    Science.gov (United States)

    Chen, Jingwen; Zhang, Jun; Dai, Jiangnan; Wu, Feng; Wang, Shuai; Chen, Cheng; Long, Hanling; Liang, Renli; Zhao, Chong; Chen, Changqing; Tang, Zhiwu; Cheng, Hailing; He, Yunbin; Li, Mingkai

    2017-03-01

    Nonpolar a-plane n-ZnO/p-AlGaN heterojunction light-emitting diodes (LEDs) have been prepared on r-sapphire substrate using metal organic chemical vapor deposition and a pulsed laser deposition method. The dominant electroluminescence emission at 390 nm from the interband transition in n-ZnO layer under a forward bias was observed. Interestingly, electroluminescence with emission at 385 nm based on an avalanche mechanism was also achieved under reverse bias. The mechanisms of both the electroluminescence and I–V characteristics are discussed in detail by considering the avalanche effect. It is demonstrated that the crystalline quality of n-ZnO, not the p-AlGaN, is what affects the performance of the nonpolar ZnO based avalanche LED.

  17. Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire

    Science.gov (United States)

    Rishinaramangalam, Ashwin K.; Nami, Mohsen; Fairchild, Michael N.; Shima, Darryl M.; Balakrishnan, Ganesh; Brueck, S. R. J.; Feezell, Daniel F.

    2016-03-01

    The fabrication of electrically injected triangular-nanostripe core-shell semipolar III-nitride LEDs (TLEDs) is demonstrated using interferometric lithography and catalyst-free bottom-up selective-area metal-organic chemical vapor deposition (MOCVD). This alternative approach enables semipolar orientations on inexpensive, c-plane sapphire substrates, in comparison with planar growth on free-standing GaN substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy reveal nonuniform quantum well thickness and composition, respectively, as a function of location on the triangular stripes. The broad electroluminescence spectra, wavelength shift with increasing current density, and nonlinear light vs current characteristics are well correlated with the observed quantum-well nonuniformities.

  18. Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Hsu, Hsiao-Chiu; Su, Yan-Kuin; Huang, Shyh-Jer; Wang, Yu-Jen; Wu, Chun-Ying; Chou, Ming-Chieh

    2010-04-01

    In this study, we had demonstrated the direct growth of nonpolar a-plane GaN on an r-plane sapphire by metal organic chemical vapor deposition (MOCVD) without any buffer layer. First, in this experiment, we had determined the optimum temperature for two-step growth, including obtaining three-dimensional (3D) GaN islands in the nucleation layer and coalescing with a further two-dimensional (2D) growth mode. The result shows that the nucleation layer grown under high temperature (1150 °C) leads to large islands with few grain boundaries. Under the same temperature, the effect of the V/III ratio on the growth of the overlaying GaN layer to obtain a flat and void free a-plane GaN layer is also studied. The result indicates one can directly grow a smooth epitaxial layer on an r-plane sapphire by changing the V/III ratio. The rms roughness decreases from 13.61 to 2.02 nm. The GaN crystal quality is verified using a mixed acid to etch the film surface. The etch pit density (EPD) is 3.16 ×107 cm-2.

  19. SEMICONDUCTOR MATERIALS: Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering

    Science.gov (United States)

    Xiaoli, Yang; Nuofu, Chen; Zhigang, Yin; Xingwang, Zhang; Yang, Li; Jingbi, You; Yu, Wang; Jingjing, Dong; Min, Cui; Yun, Gao; Tianmao, Huang; Xiaofeng, Chen; Yanshuo, Wang

    2010-09-01

    Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 °C for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 °C. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 °C with best crystallization.

  20. Demonstration of Aleutian disease virus-specific lymphocyte response in mink with progressive Aleutian disease: comparison of sapphire and pastel mink infected with different virus strains.

    Science.gov (United States)

    Race, R E; Bloom, M E; Coe, J E

    1983-09-01

    Lymphocyte blastogenesis was used to study the antiviral lymphocyte response of sapphire (Aleutian) and pastel (nonAleutian) mink inoculated with Pullman or Utah 1 Aleutian disease virus (ADV). Both mink genotypes developed a virus-specific response when inoculated with Utah 1 ADV. In contrast, after inoculation of Pullman ADV, sapphire mink had a positive virus-specific response, whereas pastel mink did not. Response occurred late after infection (8 wk) and correlated with the development of progressive Aleutian disease (AD). The response to keyhole limpet hemocyanin (KLH) and concanavalin A (Con A) was also determined. Most mink of either genotype, inoculated with either virus strain, maintained an anti-KLH response during disease. Most mink also responded to Con A, although some exhibited suppressed Con A response late in the disease course. These results indicated that mink develop an anti-ADV lymphocyte response during progressive AD and are not immunosuppressed with regard to other antigens or mitogens.

  1. Clinical characteristics associated with Borrelia burgdorferi sensu lato skin culture results in patients with erythema migrans.

    Directory of Open Access Journals (Sweden)

    Franc Strle

    Full Text Available Clinical characteristics associated with isolation of Borrelia burgdorferi sensu lato from skin have not been fully evaluated. To gain insight into predictors for a positive EM skin culture, we compared basic demographic, epidemiologic, and clinical data in 608 culture-proven and 501 culture-negative adult patients with solitary EM. A positive Borrelia spp. skin culture was associated with older age, a time interval of >2 days between tick bite and onset of the skin lesion, EM ≥ 5 cm in diameter, and location of the lesion on the extremities, whereas several other characteristics used as clinical case definition criteria for the diagnosis of EM (such as tick bite at the site of later EM, information on expansion of the skin lesion, central clearing were not. A patient with a 15-cm EM lesion had almost 3-fold greater odds for a positive skin culture than patients with a 5-cm lesion. Patients with a free time interval between the tick bite and onset of EM had the same probability of a positive skin culture as those who did not recall a tick bite (OR=1.02; however, the two groups had >3-fold greater odds for EM positivity than patients who reported a tick bite with no interval between the bite and onset of the lesion. In conclusion, several yet not all clinical characteristics used in EM case definitions were associated with positive Borrelia spp. skin culture. The findings are limited to European patients with solitary EM caused predominantly by B. afzelii but may not be valid for other situations.

  2. Uniqueness Results for Ill-Posed Characteristic Problems in Curved Space-Times

    Science.gov (United States)

    Ionescu, Alexandru D.; Klainerman, Sergiu

    2009-02-01

    We prove two uniqueness theorems concerning linear wave equations; the first theorem is in Minkowski space-times, while the second is in the domain of outer communication of a Kerr black hole. Both theorems concern ill-posed Cauchy problems on bifurcate, characteristic hypersurfaces. In the case of the Kerr space-time, the hypersurface is precisely the event horizon of the black hole. The uniqueness theorem in this case, based on two Carleman estimates, is intimately connected to our strategy to prove uniqueness of the Kerr black holes among smooth, stationary solutions of the Einstein-vacuum equations, as formulated in [14].

  3. Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, H. [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Dai, J.N., E-mail: daijiangnan@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Hui, Xiong; Fang, Y.Y.; Tian, W.; Fu, D.X. [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, C.Q., E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Li, Mingkai; He, Yunbin [Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Faculty of Materials Science and Engineering, Hubei University, Wuhan 430062 (China)

    2013-03-25

    Highlights: ► High-quality c-plane ZnO films can be achieved by PLD. ► The rocking curve with FWHM of 0.09° by using 150 nm-thickness AlN/c-sapphire template. ► The properties of ZnO films were studied by AFM, XRD, PL and Raman measurements. ► We report on the fabrication of ZnO films with different thicknesses of AlN buffer layers. -- Abstract: In this work, ZnO films with high crystal quality were grown by pulsed laser deposition (PLD) on different c-plane AlN/c-sapphire template thereby the thicknesses of AlN buffer layers varied from 150 to 300 nm. The properties of ZnO thin films were studied by using high-resolution X-ray diffraction, atomic force microscopy, photoluminescence spectroscopy, and Raman measurement. The comparative investigation results show that inserting an AlN buffer layer is an effective way to improve the crystal quality of ZnO films. Furthermore, the thickness of the AlN buffer layer plays an important role on the quality of ZnO films. The result of (0 0 0 2) ω-rocking curve with the full width at half maximum (FWHM) of 0.09° indicates that high-quality c-plane ZnO films can be achieved by using a 150 nm-thickness AlN/c-sapphire template. In the best knowledge of the authors, this is the minimum value reported at present for ZnO films grown on AlN/c-sapphire templates by PLD.

  4. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yuan, Shu; Liu, Yingce [Quantum Wafer Inc., Foshan 528251 (China); Guo, L. Jay [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Sheng, E-mail: victor_liu63@126.com [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); Ding, Han [State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-15

    Graphical abstract: - Highlights: • TEM is used to characterize threading dislocation existing in GaN epitaxial layer. • Effect of threading dislocation on optical and electrical of LEDs is discussed. • Strip-shaped SiO{sub 2} DCBL is designed to improve current spreading performance of LEDs. - Abstract: We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO{sub 2} distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO{sub 2} DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO{sub 2} DCBL, light output power of high power PSS-LED chip could be further increased by 13%.

  5. The water kefir grain inoculum determines the characteristics of the resulting water kefir fermentation process.

    Science.gov (United States)

    Laureys, D; De Vuyst, L

    2017-03-01

    To investigate the influence of the water kefir grain inoculum on the characteristics of the water kefir fermentation process. Three water kefir fermentation processes were started with different water kefir grain inocula and followed as a function of time regarding microbial species diversity, community dynamics, substrate consumption profile and metabolite production course. The inoculum determined the water kefir grain growth, the viable counts on the grains, the time until total carbohydrate exhaustion, the final metabolite concentrations and the microbial species diversity. There were always 2-10 lactic acid bacterial cells for every yeast cell and the majority of these micro-organisms was always present on the grains. Lactobacillus paracasei, Lactobacillus hilgardii, Lactobacillus nagelii and Saccharomyces cerevisiae were always present and may be the key micro-organisms during water kefir fermentation. Low water kefir grain growth was associated with small grains with high viable counts of micro-organisms, fast fermentation and low pH values, and was not caused by the absence of exopolysaccharide-producing lactic acid bacteria. The water kefir grain inoculum influences the microbial species diversity and characteristics of the fermentation process. A select group of key micro-organisms was always present during fermentation. This study allows a rational selection of a water kefir grain inoculum. © 2016 The Society for Applied Microbiology.

  6. Gender Differences in the Clinical Characteristics of Psychotic Depression: Results from the CRESCEND Study.

    Science.gov (United States)

    Park, Seon-Cheol; Østergaard, Søren Dinesen; Kim, Jae-Min; Jun, Tae-Youn; Lee, Min-Soo; Kim, Jung-Bum; Yim, Hyeon-Woo; Park, Yong Chon

    2015-12-31

    To test whether there are gender differences in the clinical characteristics of patients with psychotic depression (PD). Using data from the Clinical Research Center for Depression (CRESCEND) study in South Korea, we tested for potential gender differences in clinical characteristics among 53 patients with PD. The Psychotic Depression Assessment Scale (PDAS) and other psychometric scales were used to evaluate various clinical features of the study subjects. Independent t-tests were performed for normally distributed variables, Mann-Whitney U-tests for non-normally distributed variables, and χ(2)tests for discrete variables. In addition, to exclude the effects of confounding variables, we carried out an analysis of covariance (ANCOVA) for the normally distributed variables and binary logistic regression analyses for discrete variables, after adjusting the effects of marital status. We identified more prevalent suicidal ideation (adjusted odds ratio [aOR]=10.316, p=0.036) and hallucinatory behavior (aOR=8.332, p=0.016), as well as more severe anxiety symptoms (degrees of freedom [df]=1, F=6.123, p=0.017), and poorer social and occupational functioning (df=1, F=6.265, p=0.016) in the male patients compared to the female patients. Our findings suggest that in South Korean patients with PD, suicidal ideation, hallucinatory behavior, and anxiety is more pronounced among males than females. This should be taken into consideration in clinical practice.

  7. Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

    Institute of Scientific and Technical Information of China (English)

    KANG Chao-Yang; TANG Jun; LIU Zhong-Liang; LI Li-Min; YAN Wen-Sheng; WEI Shi-Qiang; XU Peng-Shou

    2011-01-01

    Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber.The reflection high energy diffraction,Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample,which confirm the formation of graphene layers.The mean domain size of FLG is around 29.2 nm and the layer number is about 2-3.The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated a-SiC surface.Graphene,a monolayer of sp2-bonded carbon atoms,is a quasi two-dimensional (2D) material.It has attracted great interest because of its distinctive band structure and physical properties.[1] Graphene can now be obtained by several different approaches including micromechanical[1] and chemical[2] exfoliation of graphite,epitaxial growth on hexagonal SiC substrates by Si sublimation in vacuum,[3] and CVD growth on metal substrates.[4] However,these preparation methods need special substrates,otherwise,in order to design microelectronic devices,the prepared graphene should be transferred to other appropriate substrates.Thus the growth of graphene on the suitable substrates is motivated.%Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample, which confirm the formation of graphene layers. The mean domain size of FLG is around 29.2nm and the layer number is about 2-3. The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated α-SiC surface.

  8. Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

    Science.gov (United States)

    Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-11-01

    ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

  9. Carbon nanotube assisted Lift off of GaN layers on sapphire

    Science.gov (United States)

    Long, Hao; Feng, Xiaohui; Wei, Yang; Yu, Tongjun; Fan, Shoushan; Ying, Leiying; Zhang, Baoping

    2017-02-01

    Laser lift off (LLO) was one of the most essential processes in fabrication of vertical GaN-based LEDs. However, traditional laser lift off of GaN on sapphire substrates needed high laser energy threshold, which deteriorated the GaN crystal. In this paper, it was found that inserting carbon nanotube between GaN and sapphire could effectively reduce the laser energy threshold in GaN LLO, from 1.5 J /cm2 of conventional GaN/sapphire to 1.3 J /cm2 of CNT inserted GaN/sapphire. The temperature distributions at the GaN/sapphire interfaces with and without CNTs were simulated by the finite elements calculation under laser irradiation. It was found that, due to the higher laser absorption coefficient of CNT, the CNT played as a powerful heating wire, sending out the thermal outside to elevate the GaN's temperature, and thus reduce the laser threshold for LLO. Raman and photoluminescence measurements indicated that residual stress of GaN membranes was as small as 0.3 GPa by the carbon nanotube assisted LLO. This work not only opens new application of CNTs, but also demonstrates the potential of high performance blue and green LEDs.

  10. RESULTS CONCERNING THE MELLIFEROUS CHARACTERISTICS OF THE SUNFLOWER HYBRIDS CULTIVATED IN ROMANIA

    Directory of Open Access Journals (Sweden)

    NICOLETA ION

    2013-12-01

    Full Text Available The present paper presents the melliferous characteristics of thirty three sunflowerhybrids studied in the period 2002-2006 in South Romania. The studied hybridswere the following: Festiv, Florom 350, Alex, Romina, Performer, Turbo, Favorit,Justin, Splendor, Trajano, Hercule, Felix, Select and 20 being foreign hybrids(Melody, Sunko, Sanay, Kasol, NK Dolbi, NK Ferti, NK Armoni, Opera PR, Rigasol,Huracan, Podium, Fleuret OR, Rigasol, OR, Mateol, Lindor, Fly, Arena, Alexandra,Masai, SaxoIn order to evaluate the quantity of sugar per hectare and further the potential yieldof honey per hectare, the nectar secretion (capillaries method, the sugarconcentration of the nectar (refractometer method, the number of flowers per headand the number of plants per hectare were determined during field studies.

  11. Compact fixed wavelength femtosecond oscillators as an add-on for tunable Ti:sapphire lasers extend the range of applications towards multimodal imaging and optogenetics

    Science.gov (United States)

    Hakulinen, T.; Klein, J.

    2016-03-01

    Two-photon (2P) microscopy based on tunable Ti:sapphire lasers has become a widespread tool for 3D imaging with sub-cellular resolution in living tissues. In recent years multi-photon microscopy with simpler fixed-wavelength femtosecond oscillators using Yb-doped tungstenates as gain material has raised increasing interest in life-sciences, because these lasers offer one order of magnitude more average power than Ti:sapphire lasers in the wavelength range around 1040 nm: Two-photon (2P) excitation of mainly red or yellow fluorescent dyes and proteins (e.g. YFP, mFruit series) simultaneously has been proven with a single IR laser wavelength. A new approach is to extend the usability of existing tunable Titanium sapphire lasers by adding a fixed IR wavelength with an Yb femtosecond oscillator. By that means a multitude of applications for multimodal imaging and optogenetics can be supported. Furthermore fs Yb-lasers are available with a repetition rate of typically 10 MHz and an average power of typically 5 W resulting in pulse energy of typically 500 nJ, which is comparably high for fs-oscillators. This makes them an ideal tool for two-photon spinning disk laser scanning microscopy and holographic patterning for simultaneous photoactivation of large cell populations. With this work we demonstrate that economical, small-footprint Yb fixed-wavelength lasers can present an interesting add-on to tunable lasers that are commonly used in multiphoton microscopy. The Yb fs-lasers hereby offer higher power for imaging of red fluorescent dyes and proteins, are ideally enhancing existing Ti:sapphire lasers with more power in the IR, and are supporting pulse energy and power hungry applications such as spinning disk microscopy and holographic patterning.

  12. Modeling of dopant segregation in sapphire single crystal fibre growth by Micro-Pulling-Down method

    Science.gov (United States)

    Wenjia, Su; Duffar, Thierry; Nehari, Abdeljelil; Kononets, Valerii; Lebbou, Kheirreddine

    2017-09-01

    Experiments and numerical simulations are conducted in order to study the causes and solutions for the Ti inhomogeneity problem in Ti doped sapphire Micro-Pulling-Down (μ-PD) growth. The measurement and modeling of the thermal and flow fields, electromagnetic field, Ti concentration in the molten zone and along the fibre axis are compared. For the mean Ti concentration along the fibre and temperature along the iridium crucible, the modeling results are consistent with experiments. Results showed that for high pulling rate, the mass transfer in the capillary is dominated by convection. Marangoni convection is strong in the meniscus due to the large temperature gradient, which has great impact on the Ti distribution for different fibre radii. For high pulling rate, Ti concentration increases quickly from the seed along the fibre axis, and reaches a constant value after about 0.5-2 mm. Radial segregation is high for large diameter fibres. The constant Ti concentration along the fibre axis is increasing when increasing the fibre radius from 0.2 to 0.6 mm. For 0.8 mm, it decreases due to the change of the vortex. At low growth rate, the transport in the capillary is diffusive, back to the crucible, which leads to a Scheil-like Ti distribution, in full agreement with the experimental results.

  13. Mesoscale Laser Processing using Excimer and Short-Pulse Ti: Sapphire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Shirk, M D; Rubenchik, A M; Gilmer, G H; Stuart, B C; Armstrong, J P; Oberhelman, S K; Baker, S L; Nikitin, A J; Mariella, R P

    2003-07-28

    Targets to study high-energy density physics and inertial confinement fusion processes have very specific and precise tolerances that are pushing the state-of-the-art in mesoscale microsculpting technology. A significant effort is required in order to advance the capabilities to make these targets with very challenging geometries. Ultrashort pulsed (USP) Ti:Sapphire lasers and excimer lasers are proving to be very effective tools in the fabrication of the very small pieces that make up these targets. A brief description of the dimensional and structural requirements of these pieces will be presented, along with theoretical and experimental results that demonstrate to what extent these lasers are achieving the desired results, which include sub-{mu}m precision and RMS surface values well below 100 nm. This work indicates that excimer lasers are best at sculpting the polymer pieces and that the USP lasers work quite well on metal and aerogel surfaces, especially for those geometries that cannot be produced using diamond machining and where material removal amounts are too great to do with focused ion beam milling in a cost effective manner. In addition, the USP laser may be used as part of the procedure to fill target capsules with fusion fuel, a mixture of deuterium and tritium, without causing large perturbations on the surface of the target by keeping holes drilled through 125 {micro}m of beryllium below 5 {micro}m in diameter.

  14. Grain boundary structure and solute segregation in titanium-doped sapphire bicrystals

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Seth T.

    2002-05-17

    Solute segregation to ceramic grain boundaries governs material processing and microstructure evolution, and can strongly influence material properties critical to engineering performance. Understanding the evolution and implications of grain boundary chemistry is a vital component in the greater effort to engineer ceramics with controlled microstructures. This study examines solute segregation to engineered grain boundaries in titanium-doped sapphire (Al2O3) bicrystals, and explores relationships between grain boundary structure and chemistry at the nanometer scale using spectroscopic and imaging techniques in the transmission electron microscope (TEM). Results demonstrate dramatic changes in solute segregation stemming from small fluctuations in grain boundary plane and structure. Titanium and silicon solute species exhibit strong tendencies to segregate to non-basal and basal grain boundary planes, respectively. Evidence suggests that grain boundary faceting occurs in low-angle twis t boundaries to accommodate nonequilibrium solute segregation related to slow specimen cooling rates, while faceting of tilt grain boundaries often occurs to expose special planes of the coincidence site lattice (CSL). Moreover, quantitative analysis of grain boundary chemistry indicates preferential segregation of charged defects to grain boundary dislocations. These results offer direct proof that static dislocations in ionic materials can assume a net charge, and emphasize the importance of interactions between charged point, line, and planar defects in ionic materials. Efforts to understand grain boundary chemistry in terms of space charge theory, elastic misfit and nonequilibrium segregation are discussed for the Al2O3 system.

  15. Laser-induced microexplosion confined in the bulk of a sapphire crystal: evidence of multimegabar pressures.

    Science.gov (United States)

    Juodkazis, S; Nishimura, K; Tanaka, S; Misawa, H; Gamaly, E G; Luther-Davies, B; Hallo, L; Nicolai, P; Tikhonchuk, V T

    2006-04-28

    Extremely high pressures (approximately 10 TPa) and temperatures (5 x 10(5) K) have been produced using a single laser pulse (100 nJ, 800 nm, 200 fs) focused inside a sapphire crystal. The laser pulse creates an intensity over 10(14) W/cm2 converting material within the absorbing volume of approximately 0.2 microm3 into plasma in a few fs. A pressure of approximately 10 TPa, far exceeding the strength of any material, is created generating strong shock and rarefaction waves. This results in the formation of a nanovoid surrounded by a shell of shock-affected material inside undamaged crystal. Analysis of the size of the void and the shock-affected zone versus the deposited energy shows that the experimental results can be understood on the basis of conservation laws and be modeled by plasma hydrodynamics. Matter subjected to record heating and cooling rates of 10(18) K/s can, thus, be studied in a well-controlled laboratory environment.

  16. Effect of season on characteristics of pecorino cheese and ricotta of Pistoiese Appennine: first results

    Directory of Open Access Journals (Sweden)

    L. Giustini

    2010-04-01

    Full Text Available The “Pecorino pistoiese” is made from milk of Massese Sheep. The flocks are reared by grazing on natural pastures of Pistoiese Appennine. The farms product cheeses by milk without pasteurization. The handmade cheeses are characterized by a remarkable variability due to farm and to season. The aim of this work is to study the effect of season on characteristics of the pecorino e ricotta pistoiese with particular attention for the determination of the yield. One trial was run in each season (4 trials and in 3 farms. Every phases of the cheesemaking were controlled and milk, cheese and ricotta were weighed and analysed. The season showed some significant effects on the chemical composition of milk: lactose and SNF showed lower values in summer. The pecorino cheese showed 18.5% of fat and 24.7% of protein on average. In spring and in summer the yield in pecorino cheese (15.8% was significantly worse than in winter (19.3%. The ricotta cheese was fatter in summer (27.6% than in winter (17.5%. The yield of ricotta at 24 hours was 13.5% on average.

  17. Sapphire hard X-ray Fabry-Perot resonators for synchrotron experiments.

    Science.gov (United States)

    Tsai, Yi Wei; Wu, Yu Hsin; Chang, Ying Yi; Liu, Wen Chung; Liu, Hong Lin; Chu, Chia Hong; Chen, Pei Chi; Lin, Pao Te; Fu, Chien Chung; Chang, Shih Lin

    2016-05-01

    Hard X-ray Fabry-Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al2O3, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X-rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X-ray cavity resonance and measurements using scanning electron microscopic and X-ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions.

  18. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  19. Stability of trapped charges in sapphires and alumina ceramics: Evaluation by secondary electron emission

    Science.gov (United States)

    Zarbout, K.; Si Ahmed, A.; Moya, G.; Bernardini, J.; Goeuriot, D.; Kallel, A.

    2008-03-01

    The stability of trapped charges in sapphires and alumina ceramics is characterized via an experimental parameter expressing the variation of the secondary electron emission yield between two electron injections performed in a scanning electron microscope. Two types of sapphires and polycrystalline alumina, which differ mainly by their impurity content, are investigated in the temperature range 300-663K. The stable trapping behavior in sapphires is attributed to trapping in different defects, whose nature depends on the purity level. In alumina ceramics, the ability to trap charges in a stable way is stronger in samples of high impurity content. In the low impurity samples, stable trapping is promoted when the grain diameter decreases, whereas the reverse is observed in high impurity materials. These behaviors can stem from a gettering effect occurring during sintering. The strong dependence of the variation of the secondary electron emission yield on the grain diameter and impurities enables a scaling of the stable trapping ability of alumina materials.

  20. Occlusal characteristics in 3-year-old children--results of a birth cohort study.

    Science.gov (United States)

    Wagner, Yvonne; Heinrich-Weltzien, Roswitha

    2015-08-07

    Aim of this prospective study was to determine prevalence of malocclusion and associated risk factors in 3-year-old Thuringian children. Subjects (n = 377) were participants in a regional oral health programme, a birth cohort study with the aim to prevent caries (German Clinical Trials Register DRKS00003438). Children received continuous dental care since birth. Occlusal characteristics (overjet, overbite, anterior open bite, canine relationship and posterior crossbite) were measured at the age of 3 years by one calibrated clinician using a vernier caliper (accuracy 0.1 mm; Münchner Modell 042-751-00, Germany). A regular parent survey was conducted to assess risk factors for development of malocclusion. Three hundred seventy seven children (mean age 3.31 ± 0.70 years; 52.5% male) were examined. Children had a mean overjet of 2.4 ± 0.8 mm and the mean overbite was 0.8 ± 1.2 mm; 58.8 % of the children had a normal overjet ≤ 3 mm and 88.8% a normal overbite with overjet ≥ 3 mm, 40.8% Class II/III canine relationship, 3.4% posterior crossbite). All children who sucked the thumb had a malocclusion. Children who used a pacifier had greater odds of having a malocclusion at age of 3 years than children without pacifier use (OR = 3.36; 95% CI: 1.87-6.05). Malocclusion and dental trauma were associated, but not statistically significant (OR = 1.83; 95% CI: 0.99-3.34; p = 0.062). Malocclusion was not associated with gender, migration background, low socioeconomic status, preterm birth, special health care needs, breathing or dietary patterns (p > 0.05). Non-nutritive sucking habits were important risk factors for development of a malocclusion in the primary dentition.

  1. High-pressure sapphire cell for phase equilibria measurements of CO2/organic/water systems.

    Science.gov (United States)

    Pollet, Pamela; Ethier, Amy L; Senter, James C; Eckert, Charles A; Liotta, Charles L

    2014-01-24

    The high pressure sapphire cell apparatus was constructed to visually determine the composition of multiphase systems without physical sampling. Specifically, the sapphire cell enables visual data collection from multiple loadings to solve a set of material balances to precisely determine phase composition. Ternary phase diagrams can then be established to determine the proportion of each component in each phase at a given condition. In principle, any ternary system can be studied although ternary systems (gas-liquid-liquid) are the specific examples discussed herein. For instance, the ternary THF-Water-CO2 system was studied at 25 and 40 °C and is described herein. Of key importance, this technique does not require sampling. Circumventing the possible disturbance of the system equilibrium upon sampling, inherent measurement errors, and technical difficulties of physically sampling under pressure is a significant benefit of this technique. Perhaps as important, the sapphire cell also enables the direct visual observation of the phase behavior. In fact, as the CO2 pressure is increased, the homogeneous THF-Water solution phase splits at about 2 MPa. With this technique, it was possible to easily and clearly observe the cloud point and determine the composition of the newly formed phases as a function of pressure. The data acquired with the sapphire cell technique can be used for many applications. In our case, we measured swelling and composition for tunable solvents, like gas-expanded liquids, gas-expanded ionic liquids and Organic Aqueous Tunable Systems (OATS)(1-4). For the latest system, OATS, the high-pressure sapphire cell enabled the study of (1) phase behavior as a function of pressure and temperature, (2) composition of each phase (gas-liquid-liquid) as a function of pressure and temperature and (3) catalyst partitioning in the two liquid phases as a function of pressure and composition. Finally, the sapphire cell is an especially effective tool to gather

  2. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-02-01

    Full Text Available High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001 via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  3. Latent tracks in sapphire induced by 20-MeV fullerene beams

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, S.M.; Bonardi, N.; Canut, B. [Departement de Physique des Materiaux (UMR CNRS 5586), Universite Claude Bernard Lyon I, 69622 Villeurbanne Cedex (France); Della-Negra, S. [Institut de Physique Nucleaire, CNRS-IN2P3, 91406 Orsay (France)

    1998-01-01

    Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated with 20-MeV fullerene beams in a fluence range from 1.0{times}10{sup 10} to 2.2{times}10{sup 11} C{sub 60}{sup +}cm{sup {minus}2}. The cluster electronic stopping power (dE/dx){sub e} was approximately 62keVnm{sup {minus}1}. Two complementary techniques were employed to assess the modifications induced by these irradiations: Rutherford-backscattering spectrometry in channeling geometry (RBS-C) and transmission electron microscopy (TEM). The disorder induced by electronic processes is clearly determined by the RBS-C analysis. A damage cross section A{sub e} of about 2.2{times}10{sup {minus}12}cm{sup 2} has been extracted from the disorder kinetics, which corresponds to a track radius of {approx}8.5nm. From lattice-disorder profiling, a maximal decorrelation length of the C{sub 60} clusters in the crystal was estimated to be {approx}150nm. TEM micrographs exhibit cylindrical latent tracks formed around the projectile trajectory, while the high-resolution observations evidence the amorphization of sapphire in the core of these tracks. The present results have been interpretated within a model of high locally deposited energy densities in the cluster irradiation regime. {copyright} {ital 1998} {ital The American Physical Society}

  4. A sapphire fibre thermal probe based on fast Fourier transform and phase-lock loop

    Institute of Scientific and Technical Information of China (English)

    Wang Yu-Tian; Wang Dong-Sheng; Ge Wen-Qian; Cui Li-Chao

    2006-01-01

    A sapphire fibre thermal probe with Cra+ ion-doped end is developed by using the laser heated pedestal growth method. The fluorescence thermal probe offers advantages of compact structure, high performance and ability to withstand high temperature in a detection range from room temperature to 450℃. Based on the fast Fourier transform(FFT), the fluorescence lifetime is obtained from the tangent function of phase angle of the non-zeroth terms in the FFT result. This method has advantages such as quick calculation, high accuracy and immunity to the background noise. This FFT method is compared with other traditional fitting methods, indicating that the standard deviation of the FFT method is about half of that of the Prony method and about 1/6 of that of the log-fit method. And the FFT method is immune to the background noise involved in a signal. So, the FFT method is an excellent way of processing signals. In addition, a phase-lock amplifier can effectively suppress the noise.

  5. Dash line glass- and sapphire-cutting with high power USP laser

    Science.gov (United States)

    Mishchik, Konstantin; Chassagne, Bruno; Javaux-Léger, Clémentine; Hönninger, Clemens; Mottay, Eric; Kling, Rainer; Lopez, John

    2016-03-01

    Glass cutting is a subject of high interest for flat panel display and consumer electronics industries. Among laser-based, water jet-based and diamond tool-based existing solutions, ultra-short pulses (USP) appear as a promising technology since this laser technology has the unique capacity to produce highly localized bulk modification owing to non-linear absorption. The cutting using USP lasers could be performed either by full ablation which is slow and generates a lot of dust, by controlled fracture propagation which is slow as well and may lead to path deviation, by stealth dicing which produces rough sidewalls, or by self-breaking induced by in-volume laser irradiation. The laser treatment is often continuous which is not necessary to perform glass cutting and may lead to over-exposure. In this paper we report on single pass glass and sapphire cutting using an USP laser (20W @200kHz or 8W@2MHz) using dash line laser treatment along the cutting trajectory. In-volume energy deposition was done along the glass thickness owing to a Bessel beam. The results will be discussed in terms of sidewall profile and roughness, path deviation, rim sharpness, energy dose and feed rate. Dash line treatment enables to tune the energy deposition and to produce the cutting effect but with a narrower heat affected zone, a better sidewall quality and a more accurate trajectory control of the cutting path.

  6. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  7. Intracavity frequency doubling of CW Ti:Sapphire laser utilising BiBO nonlinear crystal

    DEFF Research Database (Denmark)

    Thorhauge, Morten; Mortensen, Jesper Liltorp; Tidemand-Lichtenberg, Peter

    Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm.......Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm....

  8. Behaviors of optical and chemical state of Nb+ implanted sapphire after annealing

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of the radiation damage of sapphire crystal, produced by implantation with 380 keV Nb+ ion followed by annealing in a series of steps from 500 to 1100℃C at reducing atmosphere, was investigated in optical absorption and XPS measurements. It is found that the implanted niobium in sapphire is in different local environments with different chemical states after the annealing. The changes in optical density (OD) from the bands, based on the well known F-type centers, show that the annealing behavior of the radiation damage may be divided into different stages due to different mechanisms.

  9. Measurement for titanium density distribution on Ti:sapphire rods for high intensity pump source

    Energy Technology Data Exchange (ETDEWEB)

    Usami, Tsutomu; Nishimura, Akihiko; Sugiyama, Akira [Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan). Kansai Research Establishment

    2001-10-01

    A Ti:sapphire rod of 190 mm length made by Czochralski (CZ) technique was used in the flashlamp pumped high intensity laser for Yb:glass chirped pulse amplification. In the absorption spectroscopy of the rod immersed in an index matching liquid of methylene iodide, heterogeneous Ti{sup 3+} density distribution was measured along the direction of length. It has been first clarified that the Ti:sapphire rod grown by the CZ technique has 20% difference of the Ti{sup 3+} density at the both ends. (author)

  10. Distinct characteristics of asymmetric magnetic reconnections: Observational results from the exhaust region at the dayside magnetopause

    Science.gov (United States)

    Zhang, Y. C.

    2016-01-01

    Magnetic reconnection plays a key role in the conversion of magnetic energy into the thermal and kinetic energy of plasma. On either side of the diffusion region in space plasma, the conditions for the occurrence of reconnections are usually not symmetric. Previous theoretical studies have predicted that reconnections under asymmetric conditions will bear different features compared with those of symmetric reconnections, and numerical simulations have verified these distinct features. However, to date, the features of asymmetric reconnections have not been thoroughly investigated using in situ observations; thus, some results from theoretical studies and simulations have not been tested with observations sufficiently well. Here, spacecraft observations are used in a statistical investigation of asymmetric magnetic reconnection exhaust at the dayside magnetopause. The resulting observational features are consistent with the theoretical predictions. The results presented here advance our understanding of the development of reconnections under asymmetric conditions. PMID:27270685

  11. PROGNOSIS OF TRAINING EFFECTS BASED ON SOMATIC CHARACTERISTICS AND SPORT RESULT

    Directory of Open Access Journals (Sweden)

    Klimczyk Mariusz

    2015-06-01

    Full Text Available Purpose : Researchers and coaches continue to look for the solutions that would contribute to creation of somatic and mobility condition patterns, allowing the players to obtain sport achievements at the highest level. Therefore, the aim of the study was to trace the sport results’ impact in the pole vault and the selected somatic parameters of the vaulters of different ages and comparing them with the results of the players reaching the results at the highest level. Material: The study covered 29 vaulters of 17-19 years old age, engaged in the pole vault at "Zawisza Bydgoszcz", "Gwardia" Pila, "Sląsk" Wrocław, TS "Olimpia" Poznan sports clubs, the Centre of the Pole Vault in Gdańsk, as well as 4 top vaulters - two from Germany, one from the UK and one from Poland. The study was carried out in the training and sports competitions conditions in 2005-2009. In the work teaching observation method was used. The research tools were: assessment of physical development and sports outcome, which were carried out within the start period. The statistical methods were used for analysis of the study results. Results : Indicators of physical development were specified, as well as correlated with sport result for each group. The highest (the only statistically significant indicator with the pole vault at 0.69 level was reported in the sample - the volume thoracic, exhaling (19-year-old vaulters. Conclusions : The group of vaulters, belonging to the "world's finest" is characterized by a higher rate of shoulders than the other studied groups. There seems to be a large influence on sport technique and result in the pole vault belonging to the proportions of the individual somatic parameters and here the relevant connections can be seen.

  12. Kinematic Characteristics of Meteor Showers by Results of the Combined Radio-Television Observations

    Science.gov (United States)

    Narziev, Mirhusen

    2016-07-01

    One of the most important tasks of meteor astronomy is the study of the distribution of meteoroid matter in the solar system. The most important component to address this issue presents the results of measurements of the velocities, radiants, and orbits of both showers and sporadic meteors. Radiant's and orbits of meteors for different sets of data obtained as a result of photographic, television, electro-optical, video, Fireball Network and radar observations have been measured repeatedly. However, radiants, velocities and orbits of shower meteors based on the results of combined radar-optical observations have not been sufficiently studied. In this paper, we present a methods for computing the radiants, velocities, and orbits of the combined radar-TV meteor observations carried out at HisAO in 1978-1980. As a result of the two-year cycle of simultaneous TV-radar observations 57 simultaneous meteors have been identified. Analysis of the TV images has shown that some meteor trails appeared as dashed lines. Among the simultaneous meteors of d-Aquariids 10 produced such dashed images, and among the Perseids there were only 7. Using a known method, for such fragmented images of simultaneous meteors - together with the measured radar distance, trace length, and time interval between the segments - allowed to determine meteor velocity using combined method. In addition, velocity of the same meteors was measured using diffraction and radar range-time methods based on the results of radar observation. It has been determined that the mean values of meteoroid velocity based on the combined radar-TV observations are greater in 1 ÷ 3 km / c than the averaged velocity values measured using only radar methods. Orbits of the simultaneously observed meteors with segmented photographic images were calculated on the basis of the average velocity observed using the combined radar-TV method. The measured results of radiants velocities and orbital elements of individual meteors

  13. Disaster waste characteristics and radiation distribution as a result of the Great East Japan Earthquake.

    Science.gov (United States)

    Shibata, Tomoyuki; Solo-Gabriele, Helena; Hata, Toshimitsu

    2012-04-03

    The compounded impacts of the catastrophes that resulted from the Great East Japan Earthquake have emphasized the need to develop strategies to respond to multiple types and sources of contamination. In Japan, earthquake and tsunami-generated waste were found to have elevated levels of metals/metalloids (e.g., mercury, arsenic, and lead) with separation and sorting more difficult for tsunami-generated waste as opposed to earthquake-generated waste. Radiation contamination superimposed on these disaster wastes has made it particularly difficult to manage the ultimate disposal resulting in delays in waste management. Work is needed to develop policies a priori for handling wastes from combined catastrophes such as those recently observed in Japan.

  14. Characteristics

    Directory of Open Access Journals (Sweden)

    Mohamed Heikal

    2013-12-01

    Full Text Available The aim of the present work is to evaluate the effect of nano-silica (NS on physico-chemical, compressive and flexural strengths of OPC-granulated slag blended cement pastes and mortars. Different mixes were made with various amounts of NS, OPC and granulated blast-furnace slag (GBFS and hydrated for 3, 7, 28 and 90 days. The hydration behavior was followed by estimation of free lime (FL and combined water content at different curing ages. The required water for standard consistency, setting times and compressive strength was also determined. The results obtained were confirmed by XRD, DTA, IR and SEM techniques. The required water for standard consistency and setting times increases with NS content due to the presence of 1% of superplasticizer. As the NS content increases the values of both FL and pH decrease. The compressive and flexural strengths of cement mortars containing NS are higher than those of control OPC–GBFS mix (M3. As the NS content increases above 4 mass% NS, compressive and flexural strengths of OPC–GBFS–NS blends decrease but still more than those of the control samples (M3. The results of XRD, DSC, IR and SEM examinations are in good harmony with each other and with chemical analyses. The composite OPC–GBFS–NS cements containing 45 mass% of GBFS and 3–4 mass% of NS possess the highest improvement of mechanical properties, hydration kinetics and microstructure of hardened cement pastes and mortars.

  15. Characteristics of the benzene fraction of products resulting from the thermal destruction of bituminous petroleum

    Energy Technology Data Exchange (ETDEWEB)

    Kleev, A.M.; Margulis, B.Ya.; Martynov, A.A.; Vigdergauz, M.S.

    1979-01-01

    A description is given of a method for the chromatographic analysis of the 35 to 95/sup 0/C benzene feaction produced from the thermal destruction of bituminous petroleum. Aromatic, olefin, and paraffin-naphthene fractions were identified in the first stage of fluid chromatography with a fluorescent indicator. Gas chromatography was employed to undertake a detailed analysis of each fraction. The results of the analysis indicate that the use of a thermogas generator in the process of thermodestruction approximates the process of oxidative cracking. 11 references, 4 figures.

  16. Laser produced nanocavities in silica and sapphire: a parametric study

    Energy Technology Data Exchange (ETDEWEB)

    Hallo, L; Travaille, G; Tikhonchuk, V T; Breil, J [CELIA, Universite Bordeaux I, 351 cours de la Liberation, 33405 Talence (France); Bourgeade, A [CEA - CESTA, BP 2, 3334 Le Barp (France); Nkonga, B [MAB, Universite Bordeaux I, 351 cours de la Liberation, 33405 Talence (France)

    2008-05-15

    We present a model, that describes a sub-micron cavity formation in a transparent dielectric under a tight focusing of a ultra-short laser pulse. The model solves the full set of Maxwell's equations in the three-dimensional geometry along with non-linear propagation phenomenons. This allows us to initialize hydrodynamic simulations of the sub-micron cavity formation. Cavity characteristics, which depend on 3D energy release and non linear effects, have been investigated and compared with experimental results. For this work, we want to deeply acknowledge the numerical support provided by the CEA Centre de Calcul Recherche et Technologie, whose help guaranteed the achievement of this study.

  17. Microbiological characteristics of poultry meats - Results of inspections carried out in the province of Milano, Italy

    Directory of Open Access Journals (Sweden)

    Guido Grilli

    2010-01-01

    Full Text Available Examinations were conducted in terms of microbiological quality/quantity (TMC, Coliforms, E. coli, S. aureus, Sulphate-reducing Clostridia, B. cereus, Salmonella spp. and Lysteria spp. and Campylobacter spp. on 240 poultry meat samples (chicken, turkey and quail acquired pursuant to the standards set by the Regional Plan of programming and coordination in the field of operations concerning official inspections of Lombardia animal origin and by a few private companies for self-inspection. The TMC was consistently low and in line with reports in the literature, as was the case with coliforms, E. coli, S. aureus, sulphatereducing Clostrides and B. cereus. In the case of Salmonella spp., only 5 samples tested positive: one for S. typhimurium and one for S. enteritidis (chicken; only one sample from turkey tested positive for S. blokley, and two out of five samples analysed from quail tested positive result for S. typhimurium. About 3% of the samples analyzed tested positive for Listeria monocitogenes, but they were within the legal limits. Research on Campylobacter thermophiles has involved only 50 samples, of which only 5 have tested positive. These results confirm the high quality of hygiene and cleanliness of poultry meat, in accordance with that reported in the national literature and with respect to EU norms.

  18. Preliminary results of characteristic seismic anisotropy beneath Sunda-Banda subduction-collision zone

    Science.gov (United States)

    Wiyono, Samsul H.; Nugraha, Andri Dian

    2015-04-01

    Determining of seismic anisotropy allowed us for understanding the deformation processes that occured in the past and present. In this study, we performed shear wave splitting to characterize seismic anisotropy beneath Sunda-Banda subduction-collision zone. For about 1,610 XKS waveforms from INATEWS-BMKG networks have been analyzed. From its measurements showed that fast polarization direction is consistent with trench-perpendicular orientation but several stations presented different orientation. We also compared between fast polarization direction with absolute plate motion in the no net rotation and hotspot frame. Its result showed that both absolute plate motion frame had strong correlation with fast polarization direction. Strong correlation between the fast polarization direction and the absolute plate motion can be interpreted as the possibility of dominant anisotropy is in the asthenosphere..

  19. Preliminary results of characteristic seismic anisotropy beneath Sunda-Banda subduction-collision zone

    Energy Technology Data Exchange (ETDEWEB)

    Wiyono, Samsul H., E-mail: samsul.wiyono@bmkg.go.id [Study Program of Earth Sciences, Faculty of Earth Sciences and Technology, Institute of Technology Bandung, Bandung 40132 (Indonesia); Indonesia’s Agency for Meteorology Climatology and Geophysics, Jakarta 10610 (Indonesia); Nugraha, Andri Dian, E-mail: nugraha@gf.itb.ac.id [Indonesia’s Agency for Meteorology Climatology and Geophysics, Jakarta 10610 (Indonesia); Global Geophysics Research Group, Faculty of Mining and Petroleum Engineering, Institute of Technology Bandung, Bandung 40132, Indonesia, Phone: +62-22 2534137 (Indonesia)

    2015-04-24

    Determining of seismic anisotropy allowed us for understanding the deformation processes that occured in the past and present. In this study, we performed shear wave splitting to characterize seismic anisotropy beneath Sunda-Banda subduction-collision zone. For about 1,610 XKS waveforms from INATEWS-BMKG networks have been analyzed. From its measurements showed that fast polarization direction is consistent with trench-perpendicular orientation but several stations presented different orientation. We also compared between fast polarization direction with absolute plate motion in the no net rotation and hotspot frame. Its result showed that both absolute plate motion frame had strong correlation with fast polarization direction. Strong correlation between the fast polarization direction and the absolute plate motion can be interpreted as the possibility of dominant anisotropy is in the asthenosphere.

  20. Visuospatial characteristics of an elderly Chinese population: results from the WAIS-R block design test.

    Science.gov (United States)

    Yin, Shufei; Zhu, Xinyi; Huang, Xin; Li, Juan

    2015-01-01

    Visuospatial deficits have long been recognized as a potential predictor of dementia, with visuospatial ability decline having been found to accelerate in later stages of dementia. We, therefore, believe that the visuospatial performance of patients with mild cognitive impairment (MCI) and dementia (Dem) might change with varying visuospatial task difficulties. This study administered the Wechsler Adult Intelligence Scale-Revised (WAIS-R) Block Design Test (BDT) to determine whether visuospatial ability can help discriminate between MCI patients from Dem patients and normal controls (NC). Results showed that the BDT could contribute to the discrimination between MCI and Dem. Specifically, simple BDT task scores could best distinguish MCI from Dem patients, while difficult BDT task scores could contribute to discriminating between MCI and NC. Given the potential clinical value of the BDT in the diagnosis of Dem and MCI, normative data stratified by age and education for the Chinese elderly population are presented for use in research and clinical settings.

  1. Visuospatial characteristics of an elderly Chinese population: results from the WAIS-R Block Design Test

    Directory of Open Access Journals (Sweden)

    Shufei eYin

    2015-02-01

    Full Text Available Visuospatial deficits have long been recognized as a potential predictor of dementia, with visuospatial ability decline having been found to accelerate in later stages of dementia. We, therefore, believe that the visuospatial performance of patients with mild cognitive impairment (MCI and dementia (Dem might change with varying visuospatial task difficulties. This study administered the WAIS-R Block Design Test (BDT to determine whether visuospatial ability can help discriminate between MCI patients from Dem patients and normal controls (NC. Results showed that the BDT could contribute to the discrimination between MCI and Dem. Specifically, simple BDT task scores could best distinguish MCI from Dem patients, while difficult BDT task scores could contribute to discriminating between MCI and NC. Given the potential clinical value of the BDT in the diagnosis of Dem and MCI, normative data stratified by age and education for the Chinese elderly population are presented for use in research and clinical settings.

  2. Noise characteristics of thermistors: Measurement methods and results of selected devices

    Science.gov (United States)

    Ryger, Ivan; Harber, Dave; Stephens, Michelle; White, Malcolm; Tomlin, Nathan; Spidell, Matthew; Lehman, John

    2017-02-01

    As part of the development of a spectrally uniform room-temperature absolute radiometer, we have studied the electrical noise of several bulk chip thermistors in order to estimate the noise floor and optical dynamic range. Understanding the fundamental limits of the temperature sensitivity leads inevitably to studying the noise background of the complex electro-thermal system. To this end, we employ a measurement technique based on alternating current synchronous demodulation. Results of our analysis show that the combination of a low-current noise Junction Field Effect Transistor (JFET) preamplifier together with chip thermistors is optimal for our purpose, yielding a root mean square noise temperature of 2.8 μK in the frequency range of 0.01 Hz to 1 Hz.

  3. Electrocoagulation versus chemical coagulation: coagulation/flocculation mechanisms and resulting floc characteristics.

    Science.gov (United States)

    Harif, Tali; Khai, Moti; Adin, Avner

    2012-06-15

    Electrocoagulation (EC) and chemical coagulation (CC) are employed in water treatment for particle removal. Although both are used for similar purposes, they differ in their dosing method - in EC the coagulant is added by electrolytic oxidation of an appropriate anode material, while in CC dissolution of a chemical coagulant is used. These different methods in fact induce different chemical environments, which should impact coagulation/flocculation mechanisms and subsequent floc formation. Hence, the process implications when choosing which to apply should be significant. This study elucidates differences in coagulation/flocculation mechanisms in EC versus CC and their subsequent effect on floc growth kinetics and structural evolution. A buffered kaolin suspension served as a representative solution that underwent EC and CC by applying aluminum via additive dosing regime in batch mode. In EC an aluminum anode generated the active species while in CC, commercial alum was used. Aluminum equivalent doses were applied, at initial pH values of 5, 6.5 and 8, while samples were taken over pre-determined time intervals, and analyzed for pH, particle size distribution, ζ potential, and structural properties. EC generated fragile flocs, compared to CC, over a wider pH range, at a substantially higher growth rate, that were prone to restructuring and compaction. The results suggest that the flocculation mechanism governing EC in sweep floc conditions is of Diffusion Limited Cluster Aggregation (DCLA) nature, versus a Reaction Limited Cluster Aggregation (RLCA) type in CC. The implications of these differences are discussed.

  4. On hybridising lettuce seedlings with nanoparticles and the resultant effects on the organisms' electrical characteristics.

    Science.gov (United States)

    Gizzie, Nina; Mayne, Richard; Patton, David; Kendrick, Paul; Adamatzky, Andrew

    2016-09-01

    Lettuce seedlings are attracting interest in the computing world due to their capacity to become hybrid circuit components, more specifically, in the creation of living 'wires'. Previous studies have shown that seedlings can be hybridised with gold nanoparticles and withstand mild electrical currents. In this study, lettuce seedlings were hybridised with a variety of metallic and non-metallic nanomaterials: carbon nanotubes, graphene oxide, aluminium oxide and calcium phosphate. Toxic effects and the following electrical properties were monitored: mean potential, resistance and capacitance. Macroscopic observations revealed only slight deleterious health effects after administration with one variety of particle, aluminium oxide. Mean potential in calcium phosphate-hybridised seedlings showed a considerable increase when compared with the control, whereas those administered with graphene oxide showed a small decrease; there were no notable variations across the remaining treatments. Electrical resistance decreased substantially in graphene oxide-treated seedlings whereas slight increases were shown following calcium phosphate and carbon nanotubes applications. Capacitance showed no considerable variation across treated seedlings. These results demonstrate that use of some nanomaterials, specifically graphene oxide and calcium phosphate, may be towards biohybridisation purposes including the generation of living 'wires'.

  5. Newborn calf vitality: risk factors, characteristics, assessment, resulting outcomes and strategies for improvement.

    Science.gov (United States)

    Murray, Christine F; Leslie, Ken E

    2013-11-01

    Dystocia is a stressful and traumatic event for both the cow and calf. As the prevalence of dystocia has increased over time, attention has been focused on maintaining the health and longevity of the cow. Lack of vitality in the newborn calf may go unnoticed and result in short or long-term implications for calf health and performance. A prolonged or assisted delivery may increase birth stress in calves causing a variety of effects including injury, inflammation, hypoxia, acidosis, pain and an inability to maintain homeostasis. Each of these effects can further contribute to a reduced state of vitality in the newborn calf. Newborn vitality is essential to the health, survival and welfare of the calf. If the calf is not vital at birth, it may be unwilling or unable to get up and suckle colostrum in a timely manner. Early colostrum intake improves passive transfer of immunoglobulins, energy uptake and thermoregulation. Intervention may be required to assist these calves such as respiratory and thermal support, manual feeding of colostrum or the administration of non-steroidal anti-inflammatory drugs to aid health and long-term survival. However, more research is needed to determine ways in which newborn calf vitality can be assessed and improved in order to reduce the increased risk of morbidity and mortality and long-term effects on performance.

  6. Communication preferences in patients with fibromyalgia syndrome: descriptive results and patient characteristics as predictors

    Directory of Open Access Journals (Sweden)

    Ullrich A

    2014-01-01

    Full Text Available Antje Ullrich, Johannes Hauer, Erik Farin Medical Center, University of Freiburg, Institute for Quality Management and Social Medicine, Freiburg, Germany Background: Communication with patients with fibromyalgia syndrome (FMS is often considered difficult. The primary objective of this explorative study was to describe the communication preferences of FMS patients in comparison with other chronic diseases, and the secondary objective was to identify patient-related predictors of those communication preferences. Methods: A total of 256 FMS patients were asked to fill out the KOPRA [(Kommunikationspraeferenzen, communication preferences of patients with chronic illness] questionnaire at the beginning of their rehabilitation, answering questions about their communication preferences. The KOPRA’s descriptive parameters were calculated and compared with other diagnosis groups. In order to include as many influencing factors as possible, data on patient-related sociodemographic, medical, pain impact and psychologic variables were gathered. A hierarchical regression analysis with four steps was performed to identify patient-related predictors of patients’ communication preferences. Results: FMS patients consider an open and patient-centered communication style to be especially important. Emotionally supportive communication and communication about personal circumstances are important for FMS patients, but the preferences of individual patients vary widely. FMS patients reveal higher values in all the subdimensions of communication preferences compared with patients with low back pain or chronic ischemic heart disease. Only a few variables appear to predict patient communication preferences. The explained variance ranged from 3.1% to 9.7%. Psychologic variables have been identified as predictors in conjunction with all communication preferences. Conclusion: Health care providers who communicate with FMS patients should employ an open and patient

  7. [The Danish debate on priority setting in medicine - characteristics and results].

    Science.gov (United States)

    Pornak, S; Meyer, T; Raspe, H

    2011-10-01

    Priority setting in medicine helps to achieve a fair and transparent distribution of health-care resources. The German discussion about priority setting is still in its infancy and may benefit from other countries' experiences. This paper aims to analyse the Danish priority setting debate in order to stimulate the German discussion. The methods used are a literature analysis and a document analysis as well as expert interviews. The Danish debate about priority setting in medicine began in the 1970s, when a government committee was constituted to evaluate health-care priorities at the national level. In the 1980s a broader debate arose in politics, ethics, medicine and health economy. The discussions reached a climax in the 1990s, when many local activities - always involving the public - were initiated. Some Danish counties tried to implement priority setting in the daily routine of health care. The Council of Ethics was a major player in the debate of the 1990s and published a detailed statement on priority setting in 1996. With the new century the debate about priority setting seemed to have come to an end, but in 2006 the Technology Council and the Danish Regions resumed the discussion. In 2009 the Medical Association called for a broad debate in order to achieve equity among all patients. The long lasting Danish debate on priority setting has entailed only very little practical consequences on health care. The main problems seem to have been the missing effort to bundle the various local initiatives on a national level and the lack of powerful players to put results of the discussion into practice. Nevertheless, today the attitude towards priority setting is predominantly positive and even politicians talk freely about it.

  8. Some psychological characteristics of children and adolescents with vitiligo: Our results

    Directory of Open Access Journals (Sweden)

    Prćić Sonja

    2006-01-01

    Full Text Available Introduction. Numerous studies have characterized patients with chronic skin disease as psychologically vulnerable, mainly due to the fact that their condition affects their social relations and all other aspects of life. The purpose of this work was to determine whether there are significant differences in the level of anxiety, severity of depressive symptoms, and presence of stressful life events between adolescent patients with vitiligo and healthy peers. Material and methods. 33 patients with vitiligo aged 10-15 years, and a control group of 60 healthy subjects of the same age, were included in this prospective study. A clinical examination was performed to determine the clinical types of vitiligo, estimate depressive symptoms using the Birleson Depression Scale, and anxiety was evaluated by the Spielberger's scale (State-Trait Anxiety Inventory. For determination of the frequency of stressful events, the Risk Scale was used. Results. Adolescents with vitiligo did not show more pronounced signs of anxiety or depression than healthy subjects; differences were not apparent in the Risk Scale either, considering stressful events. Discussion and conclusion. The lack of differences between the two examined groups might be due to prepubertal age of the majority of subjects. 63.63% of all children included in this study were in the prepubertal age (10-12 years, which is the period when they are still not focused on their own body and changes to physical appearance. It is possible that early onset of vitiligo is a "protective factor", enabling the child to attain compensatory mechanisms to solve the problem of vitiligo through various interests and aspirations, which do not depend on physical appearance. .

  9. [Background and first results about methodological characteristics of the Aachen Life Quality Inventory].

    Science.gov (United States)

    Hütter, B O; Gilsbach, J M

    2001-01-01

    ). According to these results, the ALQI promises to become a valid and reliable means for assessing quality of life in patients with brain damage. Nevertheless, further analyses using larger patient samples and with particular emphasis on the investigation of the retest-reliability and the prognostic validity are called for in the future.

  10. Optical, physical and chemical characteristics of Australian continental aerosols: results from a field experiment

    Directory of Open Access Journals (Sweden)

    M. Radhi

    2010-07-01

    region of the Australian interior.

    Ion chromatography was used to quantify water soluble ions for 2 of our sample sets, complementing the picture provided by ion beam analysis. The strong similarities between the MSA and SO42− size distributions argue strongly for a marine origin of much of the SO42−. The similarity of the Na+, Cl and Mg2+ size distributions also argue for a marine contribution. Further, we believe that both NO3 and NH4+ are the result of surface reactions with appropriate gases.

  11. Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

    Science.gov (United States)

    Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

    2016-05-01

    The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS

  12. Maternal Characteristics Determine Stunting in Children of Less than Five Years of Age Results from a National Probabilistic Survey

    Directory of Open Access Journals (Sweden)

    Teresa Shamah-Levy

    2008-01-01

    Full Text Available Background: Maternal nutrition and some variables are the main determining factors of birthweight and delayed intrauterine growth of children.Objective: To explore the association between the mothers’ biological and sociodemographic characteristics, and the anthropometry status in children under five years of age.Design: The population consisted of a sub-sample of 1,047 mother-and-child selected pairs from the probabilistic National Nutrition Survey, carried out in Mexico. Mother-and-child pairs included mothers aged 12 to 49 years, with children under five years of age. Data on sociodemographic characteristics, obstetric history, 24-hour recall dietary intake, and the women and children’s anthropometry were collected. The association between maternal characteristics and children’s anthropometry status was assessed using multiple logistic regression models.Result: Nearly 16.7% of the children 2y. The height/age of the children was severely affected by maternal height and birth order. In addition, the interaction between socioeconomic level and maternal schooling had a marginal effect (p = 0.09 in the ≤2y group. On the other hand, whether the family received social services and the interaction between maternal height and a dichotomy urbanism variable were significant ( p = 0.05 and (p 2y group.Conclusion: Some biological and socioeconomic characteristics among mothers have a negative effect on their children’s attained size, especially in the period between 2 and 5 years of age.

  13. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors...

  14. Deep-ultraviolet frequency metrology with a narrowband titanium:sapphire laser

    NARCIS (Netherlands)

    Hannemann, S.

    2007-01-01

    Within the framework of this thesis resaerch project a narrow band titanium:sapphire laser was built. It provides nanosecond pulses that are subsequently upconverted to the deep ultraviolet frequency range. Absolute frequency calibration is achieved by linking the injection seeding light to a

  15. Laser-assisted microstructuring for Ti:sapphire channel-waveguide fabrication

    NARCIS (Netherlands)

    Crunteanu, A.; Pollnau, Markus; Jänchen, G.; Hibert, C.; Hoffmann, P.; Salathé, R.P.; Eason, R.W.; Shepherd, D.P.

    We report on the fabrication of Ti:sapphire channel waveguides. Such channel waveguides are of interest, e.g., as low-threshold tunable lasers. We investigated several structuring methods including ion beam implantation followed by wet chemical etching strip loading by polyimide spin coating and

  16. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

    DEFF Research Database (Denmark)

    König, Karsten; Andersen, Peter E.; Le, Tuan;

    2015-01-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...

  17. New sapphire and ruby components and their manufacture using diamond abrasives

    Science.gov (United States)

    Sauser, D.

    The properties of synthetic aluminum oxides (sapphire and ruby) and their applications in watchmaking (watch bearings and watchglasses) and as hard-wearing components such as centering devices for optical fibres and water jet nozzles for material cutting are discussed. Examples are given of the use of diamonds tools for machining such components, including sawing, drilling, grinding and polishing operations.

  18. "You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

    Science.gov (United States)

    Pappas, Christine

    2007-01-01

    Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

  19. A century of sapphire crystal growth: origin of the EFG method

    Science.gov (United States)

    Harris, Daniel C.

    2009-08-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Edge-Defined Film-Fed Growth (EFG) was invented by H. Labelle in the 1960s and the Heat Exchanger Method (HEM) was invented by F. Schmid and D. Viechnicki in 1967. Both methods were commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) was invented by Kh. S. Bagdasorov in the Soviet Union in the 1960s. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s. Today, half of the world's sapphire is produced by the GOI method.

  20. Wetting of the (0001) α-Al2O3 Sapphire Surface by Molten Aluminum: Effect of Surface Roughness

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2010-03-01

    The wetting of molten aluminum on the “ c”-plane (0001) of single-crystal α-Al2O3 (sapphire) was studied by the sessile drop technique from 800 °C (1073 K) to 1200 °C (1473 K). Systematically increasing the (0001) surface roughness by SiC abrasion increased the wetting contact angle, resulting in reduced wetting. The surface roughness factor R originally defined by Wenzel, was determined as a function of the abrasion, temperature, and time. The wetting decreases as the surface roughness increases. Rough surfaces also create time and temperature effects on wetting, changing those for a smoothly polished surface. The existence of a high-temperature surface structural transition for (0001) of α-Al2O3, which has been previously suggested, was confirmed. Increased roughness R accents the effect of the surface structural transition, increasing the wetting contact angle changes during the transition.

  1. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

    Science.gov (United States)

    2014-01-01

    This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs). PMID:25392706

  2. Laser-induced lateral voltage in epitaxial Al-doped ZnO thin films on tilted sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shufang; Chen, Mingjing; Yu, Wei; Chen, Jingchun; Wang, Jianglong; Fu, Guangsheng [Hebei University, College of Physics Science and Technology, Baoding (China); Zhao, Kun; Zhao, Songqing [Chinese University of Petroleum, Department of Mathematics and Physics, Beijing (China)

    2011-06-15

    Laser-induced voltage effects in epitaxial Al-doped ZnO thin films on tilted sapphire have been experimentally studied at room temperature. An open-circuit lateral voltage signal with nanosecond response time was observed when the film surface was irradiated by laser pulses of 308 nm and 1064 nm, and the voltage responsivity of the signal for 308-nm irradiation is much higher than that for 1064-nm irradiation. A mechanism based on the thermoelectric effect is proposed to explain the origin of the laser-induced lateral voltage in this system. The result suggests that the Al-doped ZnO thin films have a potential application in wide-band photodetectors from ultraviolet to near infrared. (orig.)

  3. Highly efficient, widely tunable, 10-Hz parametric amplifier pumped by frequency-doubled femtosecond Ti:sapphire laser pulses.

    Science.gov (United States)

    Zhang, J Y; Xu, Z; Kong, Y; Yu, C; Wu, Y

    1998-05-20

    We report a 10-Hz, highly efficient, widely tunable (from the visible to the IR), broadband femtosecond optical parametric generator and optical parametric amplifier (OPA) in BBO, LBO, and CBO crystals pumped by the frequency-doubled output of a regeneratively amplified Ti:sapphire laser at 400 nm. The output of the system is continuously tunable from 440 nm to 2.5 microm with a maximum overall efficiency of approximately 25% at 670 nm and an optical conversion efficiency of more than 36% in the OPA stage. The effects of the seed beam energy, the type of the crystal and the crystal length, and the pumping energy of the output of the OPA, such as the optical efficiency, the bandwidth, the pulse duration, and the group velocity mismatch between the signal and the idler and between the seeder and the pump, are investigated. The results provide useful information for optimization of the design of the system.

  4. Influence of gas flow on thermal field and stress during growth of sapphire single crystal using Kyropoulos method

    Institute of Scientific and Technical Information of China (English)

    LI Jinquan; SU Xiaoping; NA Mujilatu; YANG Hai; LI Jianmin; YU Yunqi; MI Jianjun

    2006-01-01

    The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method.The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and von Mises stress were studied for the first time.It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper presents three ways to solve this problem.The temperature gradient and stress decreases significantly as the gas pressure increases.The convexity of the solid-liquid interface slightly increases when the gas pressure increases.Numerical analysis was used to optimize the hot zone design.

  5. Effect of Shouldering Angle on Distribution of Thermal Stress in Sapphire Single Crystal Growth Using Improved Kyropoulos

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A two-dimensional model was established in the rectangular co-ordinate to study the thermal stress in the sapphire single crystal grown by the improved Kyropoulos. In the simulation, the distribution, the maximum and minimum values of the thermal stress were calculated. In addition, the relationship between the thermal stress and the shouldering angles was obtained that for lower shouldering angles, the maximum of the thermal stress value is lower and the minimum value is higher. It indicates that the distribution of the thermal stress can be improved by decreasing the shouldering angles of the crystal during the growth process. To evaluate the model, the experiment was carried out and the results are in good agreement with the calculation.

  6. Stress Analysis of ZnO Film with a GaN Buffer Layer on Sapphire Substrate

    Institute of Scientific and Technical Information of China (English)

    CUI Jun-Peng; WANG Xiao-Feng; DUAN Yao; HE Jin-Xiao; ZENG Yi-Ping

    2008-01-01

    A 5.35-μm-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) w-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction θ - 2θ scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.

  7. Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire

    Science.gov (United States)

    Jiang, Teng; Lin, Zhiyu; Zhang, Jincheng; Xu, Shengrui; Huang, Jun; Niu, Mutong; Gao, Xiaodong; Guo, Lixin; Hao, Yue

    2017-04-01

    A large amount of huge hexagonal hillocks were observed on the surface of N-polar GaN film grown on c-plane sapphire substrate by MOCVD. The distribution of residual stress and dislocation density in a typical hexagonal hillock was investigated by the mapping measurement of Micro-Raman and Cathodoluminescence (CL) spectroscopy. It is found that the residual stress at the top region of the hillock is much smaller than that of the sidewall region and the region around the hillock. Meanwhile, the CL images confirmed that the dislocation density around the hexagonal hillock is higher than the top region of the hillock. The bending and annihilation of the dislocations during the growth of the hexagonal hillock result in the relaxation of residual stress which should be responsible for the spatial variation of dislocation density and residual stress.

  8. Body characteristics, [corrected] dietary protein and body weight regulation. Reconciling conflicting results from intervention and observational studies?

    Directory of Open Access Journals (Sweden)

    Mikkel Z Ankarfeldt

    Full Text Available BACKGROUND/OBJECTIVES: Physiological evidence indicates that high-protein diets reduce caloric intake and increase thermogenic response, which may prevent weight gain and regain after weight loss. Clinical trials have shown such effects, whereas observational cohort studies suggest an association between greater protein intake and weight gain. In both types of studies the results are based on average weight changes, and show considerable diversity in both directions. This study investigates whether the discrepancy in the evidence could be due to recruitment of overweight and obese individuals into clinical trials. SUBJECTS/METHODS: Data were available from the European Diet, Obesity and Genes (DiOGenes post-weight-loss weight-maintenance trial and the Danish Diet, Cancer and Health (DCH cohort. Participants of the DCH cohort were matched with participants from the DiOGenes trial on gender, diet, and body characteristics. Different subsets of the DCH-participants, comparable with the trial participants, were analyzed for weight maintenance according to the randomization status (high or low protein of the matched trial participants. RESULTS: Trial participants were generally heavier, had larger waist circumference and larger fat mass than the participants in the entire DCH cohort. A better weight maintenance in the high-protein group compared to the low protein group was observed in the subgroups of the DCH cohort matching body characteristics of the trial participants. CONCLUSION: This modified observational study, minimized the differences between the RCT and observational data with regard to dietary intake, participant characteristics and statistical analysis. Compared with low protein diet the high protein diet was associated with better weight maintenance when individuals with greater body mass index and waist circumference were analyzed. Selecting subsets of large-scale observational cohort studies with similar characteristics as

  9. Analysis of patterns of patient compliance after an abnormal Pap smear result: the influence of demographic characteristics on patient compliance.

    Science.gov (United States)

    Rojas, Christine; Zhou, Ming K; Khamis, Harry J; Amesse, Lawrence

    2013-07-01

    This study aimed to determine population characteristics that correlate to suboptimal follow-up after an abnormal cervical cytology result. Nonpregnant women, ages 21 to 65 years, with newly diagnosed abnormal cervical cytology result between January 2009 and January 2012 at an urban clinic were eligible for inclusion in this retrospective chart review. Cervical cytology data and demographic characteristics such as age, ethnicity, employment, marital and smoking status, health insurance and number of pregnancies were abstracted from electronic medical record. A log-linear model was used to determine which factors influenced patient compliance. Of the total of 206 women, 78 (37.9%) had optimal follow-up and 128 (62.1%) had suboptimal follow-up. The 3 variables that were statistically significant in influencing patient follow-up after adjusted analyses included severity of cytology result (p = .0013), ethnicity (p = .02), and employment status (p = .0159). The risk ratio for optimal follow-up for those with severe cytology result was 1.81; for the non-whites, 1.77; and for the employed, 1.53. Ethnicity, severity of cervical cytology result, and employment status play an important role in patient follow-up after an abnormal cervical cytology result. Detecting trends in our patient population that influence adherence to follow-up will help health care providers formulate strategies that target this problem.

  10. Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

    Science.gov (United States)

    Araki, Masahiro; Mochimizo, Noriaki; Hoshino, Katsuyuki; Tadatomo, Kazuyuki

    2007-02-01

    We have investigated the direct growth of nonpolar a-plane GaN layers on an r-plane sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A high-density nucleation of GaN islands was obtained on the r-plane sapphire substrate at the initial stage of the high-temperature growth without a buffer layer, which resulted in a two-dimensional (2D) growth mode. We studied the effects of V/III ratio growth conditions on the surface morphology and growth features of an a-plane GaN layer. The results showed that a high density of pits with an inverse-pyramidal shape were formed at a high V/III ratio, whereas a relatively low density of pits were formed at a low V/III ratio due to the increase in the rate of lateral growth along the c-axis direction. We successfully grew a-plane GaN layers with a flat and pit-free surface using the “two-step growth method”. The method consisted of growing a first layer at a high V/III ratio and growing a second layer at a low V/III ratio. We found that the first layer plays an important role in GaN layer growth. The formation of a void-free GaN layer with sidewall facets in the first step leads to a flat and pit-free layer grown at a high rate of lateral growth along the c-axis direction in the second step.

  11. Body characteristics, [corrected] dietary protein and body weight regulation. Reconciling conflicting results from intervention and observational studies?

    Science.gov (United States)

    Ankarfeldt, Mikkel Z; Ängquist, Lars; Stocks, Tanja; Jakobsen, Marianne U; Overvad, Kim; Halkjær, Jytte; Saris, Wim H M; Astrup, Arne; Sørensen, Thorkild I A

    2014-01-01

    Physiological evidence indicates that high-protein diets reduce caloric intake and increase thermogenic response, which may prevent weight gain and regain after weight loss. Clinical trials have shown such effects, whereas observational cohort studies suggest an association between greater protein intake and weight gain. In both types of studies the results are based on average weight changes, and show considerable diversity in both directions. This study investigates whether the discrepancy in the evidence could be due to recruitment of overweight and obese individuals into clinical trials. Data were available from the European Diet, Obesity and Genes (DiOGenes) post-weight-loss weight-maintenance trial and the Danish Diet, Cancer and Health (DCH) cohort. Participants of the DCH cohort were matched with participants from the DiOGenes trial on gender, diet, and body characteristics. Different subsets of the DCH-participants, comparable with the trial participants, were analyzed for weight maintenance according to the randomization status (high or low protein) of the matched trial participants. Trial participants were generally heavier, had larger waist circumference and larger fat mass than the participants in the entire DCH cohort. A better weight maintenance in the high-protein group compared to the low protein group was observed in the subgroups of the DCH cohort matching body characteristics of the trial participants. This modified observational study, minimized the differences between the RCT and observational data with regard to dietary intake, participant characteristics and statistical analysis. Compared with low protein diet the high protein diet was associated with better weight maintenance when individuals with greater body mass index and waist circumference were analyzed. Selecting subsets of large-scale observational cohort studies with similar characteristics as participants in clinical trials may reconcile the otherwise conflicting results.

  12. Impact of parental ages and other characteristics at childbearing on congenital anomalies: Results for the Czech Republic, 2000-2007

    Directory of Open Access Journals (Sweden)

    Jitka Rychtarikova

    2013-01-01

    Full Text Available BACKGROUND If the impact of maternal age at childbearing on congenital anomalies is well-known for the occurrence of Down syndrome, less is known concerning its effects on other major anomalies. Information is even scarcer for the possible effects of other maternal characteristics and of age of the father. OBJECTIVE We present new results on the associations between parental ages and other maternal characteristics, on the one hand, and congenital anomalies, on the other hand, using data linkage between three Czech registries on mother, newborn, and malformations, for the period 2000-2007. METHODS As the variables are in categorical format, binary logistic regression is used in order to investigate the relationship between presence/absence of a congenital anomaly, for each of the eleven types of anomalies considered, and the set of predictors. RESULTS This research confirms the impact of a higher age of the mother on Down syndrome and on other chromosomal anomalies. Paternal age is not associated with chromosomal anomalies and, in this Czech population, has a rather slight effect on some of the congenital anomalies examined. Another finding of the present study is the possible role of various other maternal characteristics on congenital malformations. CONCLUSIONS Based on a large data set, this study concludes that both parental ages can be associated with congenital anomalies of the child, and that maternal characteristics other than age have also to be considered. COMMENTS Risk factors can be tentatively proposed if they are based on a plausible and suitably tested explanatory mechanism. Unfortunately, in the majority of individual cases of congenital anomaly, the cause of the condition is still unknown and suspected to be an interaction of multiple environmental and genetic factors.

  13. Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

    Science.gov (United States)

    Lee, Jae-Hoon; Oh, Jeong-Tak; Park, Jin-Sub; Kim, Je-Won; Kim, Yong-Chun; Lee, Jeong-Wook; Cho, Hyung-Koun

    2006-06-01

    To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.

  14. Baseline characteristics of an incident haemodialysis population in Spain: results from ANSWER—a multicentre, prospective, observational cohort study

    Science.gov (United States)

    Pérez-García, Rafael; Martín-Malo, Alejandro; Fort, Joan; Cuevas, Xavier; Lladós, Fina; Lozano, Javier; García, Fernando

    2009-01-01

    Background. The ANSWER study aims to identify risk factors leading to increased cardiovascular morbidity and mortality in a Spanish incident haemodialysis population. This paper summarizes the baseline characteristics of this population. Methods. A prospective, observational, one-cohort study, including all consecutive incident haemodialysis patients from 147 Spanish nephrology services, was conducted. Patients were enrolled between October 2003 and September 2004. Sociodemographic, clinical, laboratory and health care characteristics were collected. Results. Baseline characteristics are described for 2341 incident haemodialysis patients [mean (SD) age 65.2 (14.5) years, 63% males]. The main cause of renal failure was diabetic nephropathy (26%). The majority of patients (57%) had a Karnofsky score of 80–100 and 27% were followed up by a nephrologist for ≤6 months. In total, 86% of the patients had hypertension, 43% had dyslipidaemia and 44% had a history of cardiovascular disease. Initial vascular access was obtained via a temporary catheter in 30% of patients, via a permanent catheter in 16% and via an arteriovenous fistula in 54%. Albumin levels were 500 ng/ml, 41% and saturated transferrin 40%, 50%) despite previous treatment with erythropoiesis-stimulating agents in 41% of cases. Conclusions. There is excessive use of temporary catheters and a high prevalence of uraemia-related cardiovascular risk factors among incident haemodialysis patients in Spain. The poor control of hypertension, anaemia, malnutrition and mineral metabolism and late referral to a nephrologist indicate the need for improving the therapeutic management of patients before the onset of haemodialysis. PMID:19028750

  15. Stability and Phase Noise Tests of Two Cryo-Cooled Sapphire Oscillators

    Science.gov (United States)

    Dick, G. John; Wang, Rabi T.

    1998-01-01

    A cryocooled Compensated Sapphire Oscillator (CSO), developed for the Cassini Ka-band Radio Science experiment, and operating in the 8K - 10K temperature range was previously demonstrated to show ultra-high stability of sigma(sub y) = 2.5 x 10 (exp -15) for measuring times 200 seconds less than or equal to tau less than or equal to 600 seconds using a hydrogen maser as reference. We present here test results for a second unit which allows CSO short-term stability and phase noise to be measured for the first time. Also included are design details of a new RF receiver and an intercomparison with the first CSO unit. Cryogenic oscillators operating below about 10K offer the highest possible short term stability of any frequency sources. However, their use has so far been restricted to research environments due to the limited operating periods associated with liquid helium consumption. The cryocooled CSO is being built in support of the Cassini Ka-band Radio Science experiment and is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3-4 x 10 (exp -15) (1 second less than or equal to tau less than or equal to 100 seconds) and phase noise of -73dB/Hz @ 1Hz measured at 34 GHz. Installation in 5 stations of NASA's deep space network (DSN) is planned in the years 2000 - 2002. In the previous tests, actual stability of the CSO for measuring times tau less than or equal to 200 seconds could not be directly measured, being masked by short-term fluctuations of the H-maser reference. Excellent short-term performance, however, could be inferred by the success of an application of the CSO as local oscillator (L.O.) to the JPL LITS passive atomic standard, where medium-term stability showed no degradation due to L.O. instabilities at a level of (sigma)y = 3 x 10 (exp -14)/square root of tau. A second CSO has now been constructed, and all cryogenic aspects have been verified, including a resonator turn-over temperature of 7.907 K

  16. Optical properties of ultra-thin (layers on c-sapphire substrates with different initial growth conditions measured by surface-plasmon enhanced Raman scattering.

    Science.gov (United States)

    Kim, Ho-Jong; Kim, Tae-Soo; Lee, Jin-Gyu; Song, Jung Hoon

    2014-11-01

    We have carried out surface-plasmon enhanced Raman spectroscopy (SERS) on 30 nm-thick GaN samples grown at various temperatures, in order to investigate the properties of ultra thin GaN films on sapphire. We found that the properties, such as the strain and the free-carrier density of the thin layers, were sensitively affected by the growth temperatures. Our results show that SERS, by selectively enhancing the Raman signal near the surface, can be a very useful technique to investigate the optical properties of ultra-thin GaN films and their initial growth mode.

  17. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Zhiyu; Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn; Xu, Shengrui; Chen, Zhibin; Yang, Shuangyong; Tian, Kun; Hao, Yue [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an, Shaanxi 710071 (China); Su, Xujun [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123 (China); Shi, Xuefang [School of Advanced Materials and Nanotechnology, Xidian University, Xi' an, Shaanxi 710071 (China)

    2014-08-25

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

  18. Growth of Al-doped ZnO films with tilted nano-columns on r-cut sapphire substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Hwan [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Lu, Tianlin; Cho, Sungmee; Khatkatay, Fauzia [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Chen, Li [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States)

    2012-12-01

    2 wt.% Al{sub 2}O{sub 3}-doped ZnO (AZO) thin films in both single layer and bi-layer forms were deposited on {alpha}-Al{sub 2}O{sub 3} (011{sup Macron }2) (r-cut) and (0001) (c-cut) substrates by a pulsed laser deposition technique. Single layer AZO films were grown under either vacuum or 33.3 Pa of O{sub 2} pressure. Bilayer AZO films were grown with a sequential deposition of a uniform template layer under vacuum and a nano-column-structured layer under 33.3 Pa of O{sub 2} pressure. Interestingly, single layer AZO film grown on r-cut sapphire in high oxygen pressure (33.3 Pa) shows tilted grain boundaries along [1{sup Macron }102{sup Macron }]{sub AZO}. The bilayer film deposited on r-cut substrate shows tilted nano-column growth while the film grown on c-cut substrate has vertically grown nano-columns. The results of X-ray diffraction and cross-section transmission electron microscopy studies show a systematic variation of the d-spacing of (0002){sub AZO} and (112{sup Macron }0){sub AZO} for all AZO films. Electrical resistivity was measured and found to be strongly dependent on the different microstructures achieved under different oxygen pressures and substrates. - Highlights: Black-Right-Pointing-Pointer 2 wt.% Al doped ZnO (AZO) thin film grown on r-cut sapphire under 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Tiled boundary along [1{sup Macron }102{sup Macron }]{sub AZO} observed as a result of internal lattice strain Black-Right-Pointing-Pointer Tilted nano-column processed after sequential deposition under vacuum and 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Significantly reduced electrical resistivity observed for the films on r-cut sapphire.

  19. Evaluation of the Quality of Sapphire Using X-Ray Rocking Curves and Double-Crystal X-Ray Topography

    Science.gov (United States)

    1994-05-01

    hard, high-strength, chemically resistant optical windows; and sub- srates for the growth of epitaxial films. The quality of a sapphire crystal can... crystal diffractometer. Single- crystal sapphire may be grown by a variety of different methods, of which the more common are Verneuil (flame fusion...Linear features (L), which may represent slight variations in lattice parameter along the crystal growth front, or dislocation networks, ad small

  20. Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

    Science.gov (United States)

    Yerci, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydinli, A.; Turan, R.

    2006-10-01

    Silicon nanocrystals, average sizes ranging between 3 and 7nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800°C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.

  1. Degradation of picosecond temporal contrast of Ti:sapphire lasers with coherent pedestals.

    Science.gov (United States)

    Khodakovskiy, Nikita; Kalashnikov, Mikhail; Gontier, Emilien; Falcoz, Franck; Paul, Pierre-Mary

    2016-10-01

    Recompressed pulses from Ti:sapphire chirped-pulse lasers are accompanied by a slowly decaying post-pulse pedestal that is coherent with the main pulse. The pedestal typically consists of numerous pulses with temporal separation in the picosecond range. The source of this artifact lies in the Ti:sapphire active medium itself, both in the Kerr-lens mode-locked oscillator and in subsequent amplifiers. In the presence of substantial self-phase modulation, after recompression the post-pedestal generates a mirror-symmetric pre-pulse pedestal. This pedestal severely degrades the leading edge of the output pulse. This degradation is far more limiting than the original post-pedestal and severely lowers the achievable temporal contrast.

  2. Achieving λ/10 resolution CW STED nanoscopy with a Ti:Sapphire oscillator.

    Directory of Open Access Journals (Sweden)

    Yujia Liu

    Full Text Available In this report, a Ti:Sapphire oscillator was utilized to realize synchronization-free stimulated emission depletion (STED microscopy. With pump power of 4.6 W and sample irradiance of 310 mW, we achieved super-resolution as high as 71 nm. With synchronization-free STED, we imaged 200 nm nanospheres as well as all three cytoskeletal elements (microtubules, intermediate filaments, and actin filaments, clearly demonstrating the resolving power of synchronization-free STED over conventional diffraction limited imaging. It also allowed us to discover that, Dylight 650, exhibits improved performance over ATTO647N, a fluorophore frequently used in STED. Furthermore, we applied synchronization-free STED to image fluorescently-labeled intracellular viral RNA granules, which otherwise cannot be differentiated by confocal microscopy. Thanks to the widely available Ti:Sapphire oscillators in multiphoton imaging system, this work suggests easier access to setup super-resolution microscope via the synchronization-free STED.

  3. Characterization of superconducting magnesium-diboride films on glassy carbon and sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, E.; Zavala, E. P. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000 Mexico D. F. (Mexico); Rocha, M. F. [Escuela Superior de Ingenieria Mecanica y Electrica, IPN, Mexico D. F. (Mexico); Jergel, M.; Falcony, C. [Departamento de Fisica, CINVESTAV-IPN, Apartado postal 14-740, 07000 Mexico D. F. (Mexico)

    2008-02-15

    IBA methods were applied to measure elemental depth profiles of precursors and superconducting MgB{sub 2} thin films deposited on glassy carbon (Good Fellows) and sapphire (Al{sub 2}O{sub 3}) substrates. For each type of substrates we obtained a pair of samples i.e. one amorphous precursor and one superconducting film which were then characterized. A 3{sup H}e{sup +} beam was used to bombard both, precursors and superconducting films in order to obtain the samples elemental composition profiles. The zero resistance T{sub co} and the middle of transition T{sub cm} values were 26.0 K and 29.7 K for the MgB{sub 2} film deposited on glassy carbon substrate. In the case of sapphire substrate the T{sub co} and T{sub cm} values were 25.0 K and 27.9 K, respectively. (Author)

  4. Nearly octave-spanning frequency comb generation in AlN-on-sapphire microresonators

    CERN Document Server

    Liu, Xianwen; Xiong, Bing; Wang, Lai; Wang, Jian; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

    2016-01-01

    We report a nearly octave-spanning optical frequency comb generation with a coverage of $\\sim$1000 nm in continuous-wave pumped aluminum nitride (AlN)-on-sapphire microring resonators. Thanks to optimized device design and fabrication process, high-quality-factor AlN microrings with high cavity finesse and low insertion loss are demonstrated. By tailoring the cavity dimension, a broadband anomalous dispersion is secured to facilitate the frequency comb generation. Blue-shifted dispersive wave emission as well as stimulated Raman scattering is observed, which helps extend the comb spectrum coverage. Our work suggests that AlN-on-sapphire can be an appealing platform for integrated nonlinear optics.

  5. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  6. Physical activity on prescription schemes (PARS): do programme characteristics influence effectiveness? Results of a systematic review and meta-analyses

    Science.gov (United States)

    Arsenijevic, Jelena; Groot, Wim

    2017-01-01

    Background Physical activity on prescription schemes (PARS) are health promotion programmes that have been implemented in various countries. The aim of this study was to outline the differences in the design of PARS in different countries. This study also explored the differences in the adherence rate to PARS and the self-reported level of physical activity between PARS users in different countries. Method A systematic literature review and meta-analyses were conducted. We searched PubMed and EBASCO in July 2015 and updated our search in September 2015. Studies that reported adherence to the programme and self-reported level of physical activity, published in the English language in a peer-reviewed journal since 2000, were included. The difference in the pooled adherence rate after finishing the PARS programme and the adherence rate before or during the PARS programme was 17% (95% CI 9% to 24%). The difference in the pooled physical activity was 0.93 unit score (95 CI −3.57 to 1.71). For the adherence rate, a meta-regression was conducted. Results In total, 37 studies conducted in 11 different countries met the inclusion criteria. Among them, 31 reported the adherence rate, while the level of physical activity was reported in 17 studies. Results from meta-analyses show that PARS had an effect on the adherence rate of physical activity, while the results from the meta-regressions show that programme characteristics such as type of chronic disease and the follow-up period influenced the adherence rate. Conclusions The effects of PARS on adherence and self-reported physical activity were influenced by programme characteristics and also by the design of the study. Future studies on the effectiveness of PARS should use a prospective longitudinal design and combine quantitative and qualitative data. Furthermore, future evaluation studies should distinguish between evaluating the adherence rate and the self-reported physical activity among participants with different

  7. Evaluation of heat extraction through sapphire fibers for the GW observatory KAGRA

    OpenAIRE

    Khalaidovski, Alexander; Hofmann, Gerd; CHEN, DAN; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Allen O.; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka mine. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise. To reduce seismic noise, the mirrors will also be suspended from multi-stage pendulums. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as heat load from thermal radiation will need to be extracted through th...

  8. High energy terahertz pulses from organic crystals: DAST and DSTMS pumped at Ti:sapphire wavelength

    CERN Document Server

    Monoszlai, B; Jazbinsek, M; Hauri, C P

    2013-01-01

    High energy terahertz pulses are produced by optical rectification (OR) in organic crystals DAST and DSTMS by a Ti:sapphire amplifier system centered at 0.8 microns. The simple scheme provides broadband spectra between 1 and 5 THz, when pumped by collimated 60 fs near-infrared pump pulse and it is scalable in energy. Fluence-dependent conversion efficiency and damage threshold are reported as well as optimized OR at visible wavelength.

  9. Silicon-on-Sapphire Waveguides: Mode-converting Couplers and Four-wave Mixing

    Science.gov (United States)

    2014-09-01

    width of the waveguides was between 1600 and 1900 nm . Figure 1 shows gain bands for a waveguide with 500- nm height and 1700 - nm width, demonstrating...1. Calculated conversion efficiency of four-wave mixing in 1700 - nm wide silicon-on-sapphire waveguide. Color bar indicates conversion efficiency in...dominance. Previous investigations show that this spectral range is of interest for applications that include free-space communications, laser radar

  10. ZnO Nanostructures Grown on AlN/Sapphire Substrates by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WEI Hong-Yuan; HU Wei-Guo; ZHANG Pan-Feng; LIU Xiang-Lin; ZHU Qin-Sheng; WANG Zhan-Guo

    2007-01-01

    ZnO nanorods and nanotubes are successful synthesized on AlN/sapphire substrates by metal-organic chemical vapour deposition (MOCVD). The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the A1N under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.

  11. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate.

    Science.gov (United States)

    Dantan, Aurélien; Laurat, Julien; Ourjoumtsev, Alexei; Tualle-Brouri, Rosa; Grangier, Philippe

    2007-07-09

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate.

  12. A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

    Science.gov (United States)

    Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

    2001-01-01

    A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

  13. Amplified spontaneous emission and its restraint in a terawatt Ti:sapphire amplifier

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Amplified spontaneous emission (ASE) and its restraint in a femtosecond Ti: sapphire chirped_pulse amplifier were investigated. The noises arising from ASE were effectively filtered out in the spatial, temporal and spectral domain. Pulses as short as 38 fs were amplified to peak power of 1.4 TW. The power ratio between the amplified femtosecond pulse and the ASE was higher than 106:1.

  14. Influence of location of the lead wires on calculation results of grounding transient characteristics of a grounding rod

    Directory of Open Access Journals (Sweden)

    Kuklin D. V.

    2016-12-01

    Full Text Available For calculations and measurements of transient characteristics of groundings, the current and potential lead wires are frequently used accordingly to inject the current into the grounding and find the grounding potential rise (GPR. The results of the calculations and measurements can be dependent on the location of the current and potential lead wires due to mutual influence between them and the grounding wire. It is important to determine to what extent the location of the wires influences the calculation results for the grounding with a simple configuration. Notably, in contrast to the measurements, for the calculations it is possible to locate wires vertically, also the potential lead wire can be replaced by the integral of the electric field. For the calculations the finite difference time domain method (FDTD has been used in the work. In order to estimate to what extent the calculated GPR can be influenced by location of the wires, calculations with different wires locations have been carried out. An analysis of the calculation results has been made. There are calculation methods in which the injection of the current and calculation of the GPR are performed without the current and potential lead wires. The method based on the telegrapher's equations is one of such methods. In order to determine what location of the lead wires gives the same calculation results as those of the method that uses the telegrapher's equations, a comparison of calculation results of two methods has been made. Based on the calculation results it can be concluded that the calculated transient characteristics depend to a different extent on such factors as mutual location of the lead wires and the grounding wire, replacing the potential lead wire by the integral of the electric field, electrical parameters of the soil. Location of one of the lead wires above the grounding wire significantly reduces the calculated GPR. Calculation results for a perpendicular location

  15. Milli-electronvolt monochromatization of hard X-rays with a sapphire backscattering monochromator

    Science.gov (United States)

    Sergueev, I.; Wille, H.-C.; Hermann, R. P.; Bessas, D.; Shvyd’ko, Yu. V.; Zając, M.; Rüffer, R.

    2011-01-01

    A sapphire backscattering monochromator with 1.1 (1) meV bandwidth for hard X-rays (20–40 keV) is reported. The optical quality of several sapphire crystals has been studied and the best crystal was chosen to work as the monochromator. The small energy bandwidth has been obtained by decreasing the crystal volume impinged upon by the beam and by choosing the crystal part with the best quality. The monochromator was tested at the energies of the nuclear resonances of 121Sb at 37.13 keV, 125Te at 35.49 keV, 119Sn at 23.88 keV, 149Sm at 22.50 keV and 151Eu at 21.54 keV. For each energy, specific reflections with sapphire temperatures in the 150–300 K region were chosen. Applications to nuclear inelastic scattering with these isotopes are demonstrated. PMID:21862862

  16. Growth of p-CdTe thin films on n-GaN/sapphire

    Science.gov (United States)

    Jung, Younghun; Chun, Seunju; Kim, Donghwan; Kim, Jihyun

    2011-07-01

    CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl 2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl 2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

  17. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  18. Preparation, properties and application of sapphire single-crystal fibers grown by the EFG method

    Directory of Open Access Journals (Sweden)

    Kubát J.

    2013-05-01

    Full Text Available Sapphire – the single crystal of aluminum oxide (Al2O3 – is one of the most important artificially produced materials. The sapphire fibres studied were grown in Crytur using the “edge-defined film-fed growth” (EFG technique. Their unique physical and chemical properties can be employed in various applications. Due to their high refractive index and a broad transmission band spanning the ultraviolet, visible and infrared bands, sapphire fibres are perfect waveguides in harsh environments. The current major applications are Er:YAG laser beam delivery and pyrometric and spectrometric measurements in furnaces, combustion engines, etc. In this paper we summarize an adjustment of the EFG method to grow thin filaments by giving possible molybdenum die designs. We investigated the fibres using an optical microscope and measured their transmission of an Er:YAG laser beam (2.94 μm. The attenuation of the tested samples is approximately 0.1 dB/cm.

  19. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  20. Research of spectral characteristics of ubiquinone solution and explore of the solvent effect on the experimental results

    Science.gov (United States)

    Timofeeva, Elvira O.; Gorbunova, Elena V.; Korotaev, Valery V.

    2016-04-01

    This work is dedicated to the research of the clinical diagnosis method of determining the antioxidant status of the human body. The existing methods for determining the level of antioxidants in connection with biological functions of the human antioxidant system were studied. Antioxidants in the human body, in the form of solutions were chosen as a research objects. The technique of experimental studies of ubiquinone solutions in oil and alcohol by spectroscopic method was offered. The experimental results connected with the optical density and color characteristics confirm the possibility of applying the clinical diagnosis method of estimation antioxidant balance. Also, it was found that this method can be applicable to the quality control of medicines for treating diseases provoked by oxidative stress, which means that this method may be developed not only for using in the clinic.

  1. Characteristics, finite element analysis, test description, and preliminary test results of the STM4-120 kinematic Stirling engine

    Science.gov (United States)

    Linker, K. L.; Rawlinson, K. S.; Smith, G.

    1991-10-01

    The Department of Energy's Solar Thermal Program has, as one of its program elements, the development and evaluation of conversion device technologies applicable to dish-electric systems. The primary research and development combines a conversion device (heat engine), solar receiver, and generator mounted at the focus of a parabolic dish concentrator. The Stirling-cycle heat engine was identified as the conversion device for dish-electric with the most potential for meeting the program's goals for efficiency, reliability, and installed cost. To advance the technology toward commercialization, Sandia National Laboratories has acquired a Stirling Thermal Motors, Inc. kinematic Stirling engine, STM4-120, for evaluation. The engine is being bench-tested at Sandia's Engine Test Facility and will be combined later with a solar receiver for on-sun evaluation. This report presents the engine characteristics, finite element analyses of critical engine components, test system layout, instrumentation, and preliminary performance results from the bench test.

  2. Certain Results of Measurements of Characteristics of Stratospheric Aerosol Layer and Total Ozone Content at Siberian Lidar Station in Tomsk

    Directory of Open Access Journals (Sweden)

    Nevzorov Aleksey

    2016-01-01

    Full Text Available We consider the results of long-term remote optical monitoring, obtained at the Siberian Lidar Station of Institute of Atmospheric Optics, Siberian Branch, Russian Academy of Sciences in Tomsk (56.5°N, 85.0°E. The scattering characteristics of stratospheric aerosol layer, obtained according to data of lidar measurements since 1986, are presented. We analyze the trends of changes in the total ozone (TO content over Tomsk for the period 1996-2013 according to data of spectrophotometric measurements with employment of Total Ozone Mapping Spectrometer (TOMS data for the period 1979-1994. We determined the periods of elevated content of stratospheric aerosol over Tomsk aftera series of explosive eruptions of volcanoes of Pacific Ring of Fire and Iceland in 2006-2011. Since the second half of 1990s, we record an increasing TO trend, equaling 0.65 DU/yr for the period 1996-2013.

  3. Certain Results of Measurements of Characteristics of Stratospheric Aerosol Layer and Total Ozone Content at Siberian Lidar Station in Tomsk

    Science.gov (United States)

    Nevzorov, Aleksey; Bazhenov, Oleg; Burlakov, Vladimir; Dolgii, Sergey

    2016-06-01

    We consider the results of long-term remote optical monitoring, obtained at the Siberian Lidar Station of Institute of Atmospheric Optics, Siberian Branch, Russian Academy of Sciences in Tomsk (56.5°N, 85.0°E). The scattering characteristics of stratospheric aerosol layer, obtained according to data of lidar measurements since 1986, are presented. We analyze the trends of changes in the total ozone (TO) content over Tomsk for the period 1996-2013 according to data of spectrophotometric measurements with employment of Total Ozone Mapping Spectrometer (TOMS) data for the period 1979-1994. We determined the periods of elevated content of stratospheric aerosol over Tomsk aftera series of explosive eruptions of volcanoes of Pacific Ring of Fire and Iceland in 2006-2011. Since the second half of 1990s, we record an increasing TO trend, equaling 0.65 DU/yr for the period 1996-2013.

  4. [CHARACTERISTICS OF OSTEOCYTE CELL LINES FROM BONES FORMED AS A RESULT OF MEMBRANOUS (SKULL BONES) AND CHONDRAL (LONG BONES) OSSIFICATION].

    Science.gov (United States)

    Avrunin, A S; Doktorov, A A

    2016-01-01

    The aim of this work was to analyze the literature data and the results of authors' own research, to answer the question--if the osteocytes of bone tissues resulting from membranous and chondral ossification, belong to one or to different cell lines. The differences between the cells of osteocyte lines derived from bones resulting from membranous and chondral ossification were established in: 1) the magnitude of the mechanical signal, initiating the development of the process of mechanotransduction; 2) the nature of the relationship between the magnitude of the mechanical signal that initiates the reorganization of the architecture of bone structures and the resource of their strength; in membranous bones significantly lower mechanical signal caused a substantially greater increment of bone strength resource; 3) the biological activity of bone structures, bone fragments formed from membranous tissue were more optimal for transplantation; 4) the characteristics of expression of functional markers of bone cells at different stages of their differentiation; 5) the nature of the reaction of bone cells to mechanical stress; 6) the sensitivity of bone cells to one of the factors controlling the process of mechanotransduction (PGI2); 7) the functioning of osteocytes during lactation. These differences reflect the functional requirements to the bones of the skeleton--the supporting function in the bones of the limbs and the shaping and protection in the bones of the cranial vault. These data suggest that the results of research conducted on the bones of the skull, should not be transferred to the entire skeleton as a whole.

  5. Experimental study of multi-scale heat transfer characteristics at pool boiling

    Science.gov (United States)

    Serdyukov, V.; Surtaev, A.

    2017-01-01

    This study presents the results of the experimental investigation of local and integral characteristics of heat transfer at liquid pool boiling. Saturated ethanol and water were used as the working fluids. Thin, resistively heated indium-tin oxide films deposited onto the sapphire substrates were used as the heaters. The synchronized measurements of the heater surface temperature field and dynamics of vapor bubbles were performed by high-speed infrared thermography with the frame rate of 1000 fps and resolution of up to 0.13 μm/px and high-speed video recording. In this paper new data on major local boiling characteristics, such as nucleation site density, dynamics of vapor bubbles, temporal characteristics and nucleation frequency at different heat fluxes and superheating and their comparison with correlations are presented.

  6. Growth problems of sapphire and ruby of optical quality.

    Science.gov (United States)

    Reiss, F A

    1966-12-01

    A careful analysis of the basic mechanisms of the Verneuil process led to a methodical study of the many parameters associated with it. Among these, the feed rate, retraction rate, and flame characteristics were found to be most important. A photoelectric cell as the sensor for a servo system with two outputs was used to sense the plane of crystallization and control its position. A completely automated Verneuil apparatus, incorporating this and other control systems, suitable for the study of growth under well-defined, rigidly controlled, and dependably reproducible conditions was designed and constructed.

  7. Characteristics of adults involved in alcohol-related intimate partner violence: results from a nationally representative sample.

    Science.gov (United States)

    Gonzalez, Jennifer M Reingle; Connell, Nadine M; Businelle, Michael S; Jennings, Wesley G; Chartier, Karen G

    2014-05-17

    More than 12 million women and men are victims of partner violence each year. Although the health outcomes of partner violence have been well documented, we know very little about specific event-level characteristics that may provide implications for prevention and intervention of partner violence situations. Therefore, the purpose of this study is to evaluate substance abuse and dependence as risk factors for event-level alcohol-related intimate partner violence (IPV). Data were derived from Wave II of the National Epidemiological Survey on Alcohol and Related Conditions (2004-2005). Eligible participants (N = 2,255) reported IPV the year before the survey. Negative binomial and ordinal regression methods were used to assess risk factors for alcohol use during IPV. Respondent PTSD was the only mental health diagnosis related to alcohol use during IPV (OR = 1.45). Marijuana use was related to respondents' use of alcohol during IPV (OR = 2.68). Respondents' meeting the criteria for alcohol abuse/dependence was strongly associated with respondent drinking (OR = 10.74) and partner drinking (OR = 2.89) during IPV. Results indicate that PTSD, marijuana use disorders, alcohol abuse and dependence are associated with more frequent alcohol use during IPV. In addition, it is important to consider that the patient who presents in emergency settings (e.g., hospitals or urgent care facilities) may not be immediately identifiable as the victim or the perpetrator of partner violence. Therefore, screening and intervention programs should probe to further assess the event-level characteristics of partner violence situations to ensure the correct service referrals are made to prevent partner violence.

  8. Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal–Organic Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Horng RH

    2009-01-01

    Full Text Available Abstract ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn and oxygen (O2 as source chemicals at 500 °C. Influences of the chamber pressure and O2/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002 of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate.

  9. Updating of the interpretation of the optical absorption and emission of Verneuil synthetic and natural metamorphic blue sapphire: the role of V2+, V3+ and Cr2+

    Science.gov (United States)

    Palanza, V.; Chiodini, N.; Galli, A.; Lorenzi, R.; Moretti, F.; Paleari, A.; Spinolo, G.

    2010-11-01

    In the blue colored sapphires of metamorphic origin and Verneuil synthetic studied here, the absorption-emission properties in the VIS-NIR range are largely determined by Cr3+ and Ti3+, as we have been able to demonstrate recently. In that work a sharp radio-luminescence band occurring at 870 nm in Verneuil blue sapphires was left unattributed: here we give evidence for the attribution of that band to the 2E emission transition of V2+, and for the existence of such an emission also in natural samples of metamorphic origin. After such a result, we accurately evaluated by EDXRF the V concentrations in various samples and found the ion more ubiquitous than foreseen. We then searched for and found, weak but diagnostic spin forbidden transitions and phonon sequencies in the absorption spectra of samples sufficiently rich in V. The experimental results just mentioned allowed us to discuss the effects of the overlap of V3+ and Cr3+ spin-allowed absorption bands on the spectrum of the varieties of corundum under study. To complete the updating of the interpretation, we spent a further effort to strengthen the attribution of the absorption band at 14500 cm-1 (currently interpreted as an IVCT (Fe2+ → Fe3+)) to the 5E→5T2 transitions of Cr2+.

  10. Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    GaN epifilms are grown on the patterned sapphire substrates (PSS) (0001) and the conventional sapphire substrates (CSS) (0001) by metal-organic chemical vapor deposition (MOCVD) using a novel two-step growth. High resolution X-ray diffraction (HR-XRD) is used to investigate the threading dislocation (TD) density of the GaN epifilms. The TD density is calculated from the ω-scans full width at half maximum (FWHM) results of HR-XRD. The edge dislocation destiny of GaN grown on the PSS is 2.7×108 cm-2, which is less than on the CSS. This is confirmed by the results of atomic force microscopy (AFM) measurement. The lower TD destiny indicates that the crystalline quality of the GaN epifilms grown on the PSS is improved compared to GaN epifilms grown on the CSS. The residual strains of GaN grown on the PSS and CSS are compared by Raman Scattering spectra. It is clearly seen that the residual strain in the GaN grown on PSS is lower than on the CSS.

  11. Accurate determination of optical bandgap and lattice parameters of Zn{sub 1-x}Mg{sub x}O epitaxial films (0{<=}x{<=}0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Laumer, Bernhard [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany); I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany); Schuster, Fabian; Stutzmann, Martin [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany); Bergmaier, Andreas; Dollinger, Guenther [Universitaet der Bundeswehr Muenchen, Fakultaet fuer Luft- und Raumfahrttechnik, Werner-Heisenberg-Weg 39, 85577 Neubiberg (Germany); Eickhoff, Martin [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

    2013-06-21

    Zn{sub 1-x}Mg{sub x}O epitaxial films with Mg concentrations 0{<=}x{<=}0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x{<=}0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.

  12. Adsorption of dissolved aluminum on sapphire-c and kaolinite: implications for points of zero charge of clay minerals.

    Science.gov (United States)

    Lützenkirchen, Johannes; Abdelmonem, Ahmed; Weerasooriya, Rohan; Heberling, Frank; Metz, Volker; Marsac, Remi

    2014-01-01

    We have studied the impact of dissolved aluminum on interfacial properties of two aluminum bearing minerals, corundum and kaolinite. The effect of intentionally adding dissolved aluminum on electrokinetic potential of basal plane surfaces of sapphire was studied by streaming potential measurements as a function of pH and was complemented by a second harmonic generation (SHG) study at pH 6. The electrokinetic data show a similar trend as the SHG data, suggesting that the SHG electric field correlates to zeta-potential. A comparable study was carried out on kaolinite particles. In this case electrophoretic mobility was measured as a function of pH. In both systems the addition of dissolved aluminum caused significant changes in the charging behavior. The isoelectric point consistently shifted to higher pH values, the extent of the shift depending on the amount of aluminum present or added. The experimental results imply that published isoelectric points of clay minerals may have been affected by this phenomenon. The presence of dissolved aluminum in experimental studies may be caused by particular pre-treatment methods (such as washing in acids and subsequent adsorption of dissolved aluminum) or even simply by starting a series of measurements from extreme pH (causing dissolution), and subsequently varying the pH in the very same batch. This results in interactions of dissolved aluminum with the target surface. A possible interpretation of the experimental results could be that at low aluminum concentrations adatoms of aluminum (we will refer to adsorbed mineral constituents as adatoms) can form at the sapphire basal plane, which can be rather easily removed. Simultaneously, once the surface has been exposed to sufficiently high aluminum concentration, a visible change of the surface is seen by AFM which is attributed to a surface precipitate that cannot be removed under the conditions employed in the current study. In conclusion, whenever pre-treatment or the

  13. Design of efficient single stage chirped pulse difference frequency generation at 7 {\\mu}m driven by a dual wavelength Ti:sapphire laser

    CERN Document Server

    Erny, Christian

    2013-01-01

    We present a design for a high-energy single stage mid-IR difference frequency generation adapted to a two-color Ti:sapphire amplifier system. The optimized mixing process is based on chirped pulse difference frequency generation (CP-DFG), allowing for a higher conversion efficiency, larger bandwidth and reduced two photon absorption losses. The numerical start-to-end simulations include stretching, chirped pulse difference frequency generation and pulse compression. Realistic design parameters for commercially available non linear crystals (GaSe, AgGaS2, LiInSe2, LiGaSe2) are considered. Compared to conventional un-chirped DFG directly pumped by Ti:sapphire technology we report a threefold increase of the quantum efficiency. Our CP-DFG scheme provides up to 340 {\\mu}J pulse energy directly at 7.2 {\\mu}m when pumped with 3 mJ and supports a bandwidth of up to 350 nm. The resulting 240 fs mid-IR pulses are inherently phase stable.

  14. Epitactical FeAl films on sapphire and their magnetic properties; Epitaktische FeAl-Filme auf Saphir und ihre magnetischen Eigenschaften

    Energy Technology Data Exchange (ETDEWEB)

    Trautvetter, Moritz

    2011-05-05

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr{sup +} irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  15. Clinicopathological characteristics of patients with amyotrophic lateral sclerosis resulting in a totally locked-in state (communication Stage V).

    Science.gov (United States)

    Hayashi, Kentaro; Mochizuki, Yoko; Takeuchi, Ryoko; Shimizu, Toshio; Nagao, Masahiro; Watabe, Kazuhiko; Arai, Nobutaka; Oyanagi, Kiyomitsu; Onodera, Osamu; Hayashi, Masaharu; Takahashi, Hitoshi; Kakita, Akiyoshi; Isozaki, Eiji

    2016-09-30

    In the present study, we performed a comprehensive analysis to clarify the clinicopathological characteristics of patients with amyotrophic lateral sclerosis (ALS) that had progressed to result in a totally locked-in state (communication Stage V), in which all voluntary movements are lost and communication is impossible. In 11 patients, six had phosphorylated TAR DNA-binding protein 43 (pTDP-43)-immunoreactive (ir) neuronal cytoplasmic inclusions (NCI), two had fused in sarcoma (FUS)-ir NCI, and three had copper/zinc superoxide dismutase (SOD1)-ir NCI. The time from ALS onset to the need for tracheostomy invasive ventilation was less than 24 months in ten patients. Regardless of accumulated protein, all the patients showed common lesions in the pallido-nigro-luysian system, brainstem reticular formation, and cerebellar efferent system, in addition to motor neurons. In patients with pTDP-43-ir NCI, patients with NCI in the hippocampal dentate granule neurons (DG) showed a neuronal loss in the cerebral cortex, and patients without NCI in DG showed a preserved cerebral cortex. By contrast, in patients with FUS-ir NCI, patients with NCI in DG showed a preserved cerebral cortex and patients without NCI in DG showed marked cerebral degeneration. The cerebral cortex of patients with SOD1-ir NCI was preserved. Together, these findings suggest that lesions of the cerebrum are probably not necessary for progression to Stage V. In conclusion, patients with ALS that had progressed to result in communication Stage V showed rapidly-progressed symptoms, and their common lesions could cause the manifestations of communication Stage V.

  16. The demographics, treatment characteristics and quality of life of adult people with haemophilia in China - results from the HERO study.

    Science.gov (United States)

    Sun, J; Zhao, Y; Yang, R; Guan, T; Iorio, A

    2017-01-01

    Haemophilia management in China needs to be further developed. To further improve the quality of life (QoL) of people with haemophilia (PWH) in China, it is important to investigate the peculiarities of China as compared to other countries. The primary objective of the Haemophilia Experiences, Results and Opportunities (HERO) project was to quantify the impact of key psychosocial factors affecting PWH. This article presents the demographics, treatment characteristics, and QoL of adult PWH in China as compared with the results of the other nine countries participating in the HERO study. This was a web- (except in Algeria) and questionnaire-based survey conducted in 10 countries. A total of 110 adult PWH from China and 565 from other countries completed the questionnaire. Compared with other countries, respondents in China reported: lower rate of employment (45.6% vs. 63.1%); lower percentages of being treated by prophylaxis (4.1% vs. 36.8%), being treated always at home (27.8% vs. 54.3%) and following treatment recommendation as instructed (6.2% vs. 40.5%); greater difficulty in obtaining replacement factor products (97.3% vs. 29.6%) and visiting their treatment centre (60.9% vs. 26.4%); more annual bleeds requiring treatment (mean: 29.4/year vs. 15.4/year); lower mean self-evaluated disease control score (5.5 vs. 7.7), EQ-5D index (0.71 vs. 0.75) and visual analogue scale (7.1 vs. 7.5) scores. Employed PWH in China had a better self-reported generic QoL than those unemployed. The study suggests that there is a major need for further improvement of both medical care and ongoing psychosocial support for PWH in China. © 2016 John Wiley & Sons Ltd.

  17. Analysis of impact of geographic characteristics on suicide rate and visualization of result with Geographic Information System.

    Science.gov (United States)

    Oka, Mayumi; Kubota, Takafumi; Tsubaki, Hiroe; Yamauchi, Keita

    2015-06-01

    The aim of our study was to understand the geographic characteristics of Japanese communities and the impact of these characteristics on suicide rates. We calculated the standardized mortality ratio from suicide statistics of 3318 municipalities from 1972 to 2002. Correlation analysis, multi-regression analysis and generalized additive model were used to find the relation between topographic and climatic variables and suicide rate. We visualized the relation between geographic characteristics and suicide rate on the map of Wakayama Prefecture, using the Geographic Information System. Our study showed that the geographic characteristics of each community are related with its suicide rate. The strongest factor among the geographic characteristics to increase the suicide rate was the slope of the habitable land. It is necessary to take the characteristics of each community into consideration when we work out measures of suicide prevention. Visualization of the findings on the local map should be helpful to promote understanding of problems and to share the information among various parties in charge of suicide prevention. © 2014 The Authors. Psychiatry and Clinical Neurosciences © 2014 Japanese Society of Psychiatry and Neurology.

  18. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

    2015-06-01

    Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

  19. Origin of sapphires from a lamprophyre dike at Yogo Gulch, Montana, USA: Clues from their melt inclusions

    Science.gov (United States)

    Palke, Aaron C.; Renfro, Nathan D.; Berg, Richard B.

    2016-09-01

    Gem corundum (sapphire) has been mined from an ultramafic lamprophyre dike at Yogo Gulch in central Montana for over 100 years. The sapphires bear signs of corrosion showing that they were not in equilibrium with the lamprophyre that transported them; however, their genesis is poorly understood. We report here the observation of minute glassy melt inclusions in Yogo sapphires. These inclusions are Na- and Ca-rich, Fe-, Mg-, and K-poor silicate glasses with compositions unlike that of the host lamprophyre. Larger, recrystallized melt inclusions contain analcime and calcite drawing a striking resemblance to leucocratic ocelli in the lamprophyre. We suggest here that sapphires formed through partial melting of Al-rich rocks, likely as the lamprophyre pooled at the base of the continental crust. This idea is corroborated by MELTS calculations on a kyanite-eclogite protolith which was presumably derived from a troctolite precursor. These calculations suggest that corundum can form through peritectic melting of kyanite. Linking the melt inclusions petrologically to the lamprophyre represents a significant advancement in our understanding of sapphire genesis and sheds light on how mantle-derived magmas may interact with the continental crust on their ascent to the surface.

  20. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  1. Precision Measurement of a low-loss Cylindrical Dumbbell-Shaped Sapphire Mechanical Oscillator using Radiation Pressure

    CERN Document Server

    Bourhill, Jeremy; Tbar, Michael

    2015-01-01

    We present first results from a number of experiments conducted on a 0.53 kg cylindrical dumbbell-shaped sapphire crystal. This is the first reported optomechanical experiment of this nature utilising a novel modification to the typical cylindrical architecture. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects result in parametric frequency modulation of resonant microwave whispering gallery modes that are simultaneously excited within the crystal. A novel low-noise microwave readout system is implemented allowing extremely low noise measurements of this frequency modulation near our modes of interest, having a phase noise floor of -165 dBc/Hz at 100 kHz. Fine-tuning of the crystal's suspension has allowed for the optimisation of mechanical quality factors in preparation for cryogenic experiments, with a value of Q=8 x 10^7 achieved at 127 kHz. This results in a Q x f product of 10^13, equivalent to the best mea...

  2. The Growth Characteristics of Patients with Noonan Syndrome: Results of Three Years of Growth Hormone Treatment: A Nationwide Multicenter Study.

    Science.gov (United States)

    Şıklar, Zeynep; Genens, Mikayir; Poyrazoğlu, Şükran; Baş, Firdevs; Darendeliler, Feyza; Bundak, Rüveyde; Aycan, Zehra; Savaş Erdeve, Şenay; Çetinkaya, Semra; Güven, Ayla; Abalı, Saygın; Atay, Zeynep; Turan, Serap; Kara, Cengiz; Can Yılmaz, Gülay; Akyürek, Nesibe; Abacı, Ayhan; Çelmeli, Gamze; Sarı, Erkan; Bolu, Semih; Korkmaz, Hüseyin Anıl; Şimşek, Enver; Çatlı, Gönül; Büyükinan, Muammer; Çayır, Atilla; Evliyaoğlu, Olcay; İşgüven, Pınar; Özgen, Tolga; Hatipoğlu, Nihal; Elhan, Atilla Halil; Berberoğlu, Merih

    2016-09-01

    Noonan syndrome (NS) is a multisystem disorder, and short stature is its most striking manifestation. Optimal growth hormone (GH) treatment for NS is still controversial. In this study, using a nationwide registration system, we aimed to evaluate the growth characteristics and the clinical features of NS patients in Turkey and their growth response to GH treatment. Children and adolescents with a diagnosis of NS were included inthe study. Laboratory assessment including standard GH stimulation test results were evaluated. Height increment of patients with or without GH treatment were analyzed after three years of therapy. A total of 124 NS patients from different centers were entered in the web-based system. Short stature and typical face appearance were the most frequently encountered diagnostic features of our patients. Of the 84 patients who were followed long-term, 47 hadreceived recombinant human GH (rhGH). In this group of 47 patients, height standard deviation score (HSDS) increased from -3.62±1.14 to -2.85±0.96 after three years of therapy, indicating significant differences from the patients who did not receive GH treatment. PTPN11 gene was analyzed in 61 patients, and 64% of these patients were found to have a mutation. HSDS at admission was similar in patients with or without PTPN11 gene mutation. A diagnosis of NS should be kept in mind in all patients with short stature showing systemic clinical findings. GH therapy is effective for improvement of short stature especially in the first two years of treatment. Further studies are needed for optimisation of GH therapy and evaluation of final height data in NS patients.

  3. Modelling of Verneuil process for the sapphire crystal growth

    Science.gov (United States)

    Barvinschi, Floricica; Santailler, Jean-Louis; Duffar, Thierry; Le Gal, Hervé

    1999-03-01

    The finite element software FIDAP was used to simulate the Verneuil crystal growth process. The turbulent combustion between hydrogen and oxygen, giving water, the hydrodynamics of the gas phase, the inlet and outlet chemical species flow resulting from the combustion and the heat transfer in the furnace (including internal wall-to-wall radiation) are taken into account. A problem with 10 degrees of freedom per node is generated, solved and the results of the axisymmetric model have shown that the coupling of all these phenomena can be achieved in one numerical model. The effects of transparency of the crystal is discussed. A qualitative agreement between some experimental observations and the model is found, so that modelling may be a good tool for studying the Verneuil process. Nevertheless, some improvements of the model in conjunction with other experimental validations appear necessary.

  4. Giant secondary grain growth in Cu films on sapphire

    OpenAIRE

    Miller, David L.; Keller, Mark W.; Shaw, Justin M.; Katherine P. Rice; Keller, Robert R.; Diederichsen, Kyle M.

    2013-01-01

    Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce ...

  5. Protons and deuterons in magnesium-doped sapphire crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, R.; Gonzalez, R.; Colera, I. [Univ. Carlos III de Madrid, Leganes (Spain). Dept. de Fisica; Vila, R. [CIEMAT, Madrid (Spain). Inst. de Investigacion Basica

    1997-04-01

    Of great importance to the use of ceramics in fusion reactors are the problems associated with the presence of a high level of transmutation products induced by high-energy neutrons. For aluminum oxide, the four major products are magnesium, hydrogen, carbon, and helium. The solubility and diffusivity of hydrogen isotopes strongly depend on the concentration of specific impurities, which results in a change in the position and full-width-at-half-maximum of the OH{sup {minus}} and OD{sup {minus}} bands. The OH{sup {minus}} and OD{sup {minus}} stretching frequencies in magnesium-doped aluminum oxide crystals were determined by infrared absorption measurements. Two very broad bands centered at {approximately}3,005 and 2,228 cm{sup {minus}1} were observed for OH{sup {minus}} and OD{sup {minus}}, respectively. Polarization experiment results were compatible with OH{sup {minus}} (OD{sup {minus}}) ions lying in the basal plane, as is the case in undoped crystals. The threshold temperature for the in-diffusion of deuterons was obtained by annealing the samples in flowing D{sub 2}O vapor; the resulting value was {approximately}1,050 K. At 1223 K, the diffusion coefficient was {approximately}3 {times} 10{sup {minus}7} cm{sup 2}/s, and the activation energy was 1.6 eV.

  6. Long-term optical phase locking between femtosecond Ti:sapphire and Cr:forsterite lasers

    Science.gov (United States)

    Kobayashi, Yohei; Yoshitomi, Dai; Kakehata, Masayuki; Takada, Hideyuki; Torizuka, Kenji

    2005-09-01

    Long-term optical phase-coherent two-color femtosecond pulses were generated by use of passively timing-synchronized Ti:sapphire and Cr:forsterite lasers. The relative carrier-envelope phase relation was fixed by an active feedback loop. The accumulated phase noise from 10 mHz to 1 MHz of the locked beat note was 0.43 rad, showing tight phase locking. The optical frequency fluctuation between two femtosecond combs was submillihertz, with a 1 s averaged counter measurement over 3400 s, leading to a long-term femtosecond frequency-comb connection.

  7. A 10-Hz terawatt class Ti:sapphire laser system: Development and applications

    Indian Academy of Sciences (India)

    A K Sharma; J Smedley; T Tsang; T Rao

    2010-11-01

    We developed a two-stage Ti:sapphire laser system to generate 16 mJ/80 fs laser pulses at a pulse repetition rate of 10 Hz. The key deriver for the present design is implementing a highly efficient symmetric confocal pre-amplifier and employing a simple, inexpensive synchronization scheme relying only on a commercial digital delay generator. We characterized the amplified pulses in spatial, spectral and temporal domains. The laser system was used to investigate various nonlinear optical processes, and to modify the optical properties of metal and semiconductor surfaces. We are currently building a third amplifier to boost the laser power to the multi-terawatt range.

  8. Grating-coupled silicon-on-sapphire integrated slot waveguides operating at mid-infrared wavelengths.

    Science.gov (United States)

    Zou, Yi; Subbaraman, Harish; Chakravarty, Swapnajit; Xu, Xiaochuan; Hosseini, Amir; Lai, Wei-Cheng; Wray, Parker; Chen, Ray T

    2014-05-15

    We demonstrate subwavelength bidirectional grating (SWG) coupled slot waveguide fabricated in silicon-on-sapphire for transverse electric polarized wave operation at 3.4 μm wavelength. Coupling efficiency of 29% for SWG coupler is experimentally achieved. Propagation loss of 11  dB/cm has been experimentally obtained for slot waveguides. Two-step taper mode converters with an insertion loss of 0.13 dB are used to gradually convert the strip waveguide mode into slot waveguide mode.

  9. Autonomous cryogenic sapphire oscillators employing low vibration pulse-tube cryocoolers at NMIJ

    Science.gov (United States)

    Ikegami, Takeshi; Watabe, Ken-ichi; Yanagimachi, Shinya; Takamizawa, Akifumi; Hartnett, John G.

    2016-06-01

    Two liquid-helium-cooled cryogenic sapphire-resonator oscillators (CSOs), have been modified to operate using cryo-refrigerators and low-vibration cryostats. The Allan deviation of the first CSO was evaluated to be better than 2 x 10-15 for averaging times of 1 s to 30 000 s, which is better than that of the original liquid helium cooled CSO. The Allan deviation of the second CSO is better than 4 x 10-15 from 1 s to 6 000 s averaging time.

  10. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

    Institute of Scientific and Technical Information of China (English)

    WU Meng; ZENG Yi-Ping; WANG Jun-Xi; HU Qiang

    2011-01-01

    @@ A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal- organic chemical vapor deposition (MOCVD).The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered.Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed.A pattern model is also proposed to analyze the possible mechanisms in atomic scale.

  11. Ultrahigh resolution optical coherence tomography with femtosecond Ti:sapphire laser and photonic crystal fiber

    Institute of Scientific and Technical Information of China (English)

    XUE Ping; James G FUJIMOTO

    2008-01-01

    Optical coherence tomography (OCT) with ultrahigh axial resolution was achieved by the super-contin- uum generated by coupling femtosecond pulses from a commercial Ti :sapphire laser into an air-silica microstructure fiber. The visible spectrum of the super-continuum from 450 to 700 nm centered at 540 nm can be generated. A free-space axial OCT resolution of 0.64 IJm was achieved. The sensitivity of OCT system was 108 dB with incident light power 3 mW at sample, only 7dB below the theoretical limit. Subcellular OCT imaging was also demonstrated, showing great potential for biomedical application.

  12. Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching.

    Science.gov (United States)

    Moser, Rüdiger; Ojha, Nirdesh; Kunzer, Michael; Schwarz, Ulrich T

    2011-11-21

    We demonstrate the realization of sub-surface channels in sapphire prepared by ultraviolet picosecond laser irradiation and subsequent selective wet etching. By optimizing the pulse energy and the separation between individual laser pulses, an optimization of channel length can be achieved with an aspect ratio as high as 3200. Due to strong variation in channel length, further investigation was done to improve the reproducibility. By multiple irradiations the standard deviation of the channel length could be reduced to 2.2%. The achieved channel length together with the high reproducibility and the use of a commercial picosecond laser system makes the process attractive for industrial application.

  13. Containerless laser-induced flourescence study of vaporization and optical properties for sapphire and alumina

    Science.gov (United States)

    Nordine, Paul C.; Schiffman, Robert A.

    1988-01-01

    Evaporation of aluminum oxide was studied from 1800 to 2327 K by laser-induced flourescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO2 laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al2O3. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

  14. Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods

    Science.gov (United States)

    Boquillon, J. P.; Said, J.

    1992-04-01

    The design and the development of a flashlamp-pumped Ti:Sapphire laser is described. Design criteria are discussed and performance improvements using different types of fluorescent UV converters or filters, such as organic dyes or doped glass are presented. We have tested different laser rods at various Ti-concentrations obtained by Verneuil or Czochralski growth techniques. The maximum laser output energy of 540 mJ with a differential efficiency up to 1% was achieved by using only a pyrex filter surrounding the laser rod.

  15. A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

    DEFF Research Database (Denmark)

    Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

    2010-01-01

    We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

  16. Measurement of Birefringence of Low-Loss, High-Reflectance Coating of M-Axis Sapphire

    OpenAIRE

    2001-01-01

    The birefringence of a low-loss, high-reflectance coating applied to an 8-cm-diameter sapphire crystal grown in the m-axis direction has been mapped. By monitoring the transmission of a high-finesse Fabry-Perot cavity as a function of the polarization of the input light, we find an upper limit for the magnitude of the birefringence of 2.5 x 10^-4 rad and an upper limit in the variation in direction of the birefringence of 10 deg. These values are sufficiently small to allow consideration of m...

  17. Synchronization of an Ultrafast Ti:Sapphire Laser to the S-Band Microwave

    Institute of Scientific and Technical Information of China (English)

    LIU Sheng-Guang; WANG Ming-Kai; SUN Da-Rui; DAI Jian-Ping; LI Yong-Gui

    2004-01-01

    @@ We have synchronized a 102-MHz ultrafast self-mode-locked Ti:sapphire laser to a 2856-MHz rf source with the sample-locking technology. The relative root-mean-square time-jitter is 0.57ps and the maximum time jitter is 2.60ps. This is the first time that synchronization between the ultrafast laser pulse and the s-band microwave has been accomplished in China. Potential applications include synchronization of lasers and rf power sources in particle accelerator experiments and high-resolution pump-probe experiments.

  18. Homogenous Crack-Free Large Size YBCO/YSZ/Sapphire Films for Application

    Science.gov (United States)

    Almog, B.; Azoulay, M.; Deutscher, G.

    2006-09-01

    YBa2Cu3O7-δ (YBCO) films grown on Sapphire are highly suitable for applications. The production of large size (2-3″) homogeneous, thick (d ⩾ 600nm) films of high quality is of major importance. We report the growth of such films using a buffer layer of Yttrium-stabilized ZrO2(YSZ). The films are highly homogeneous and show excellent mechanical properties. They exhibit no sign of cracking even after many thermal cycles. Their critical thickness exceeds 1000nm. However, because of the large lattice mismatch there is a decrease in the electric properties(increases Rs, decreases jc).

  19. Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method

    Science.gov (United States)

    Samanta, Gaurab; Yeckel, Andrew; Bourret-Courchesne, Edith D.; Derby, Jeffrey J.

    2012-11-01

    The micro-pulling-down (μ-PD) crystal growth of sapphire fibers, whose steady-state limits were the focus of our prior study [Samanta et al., Journal of Crystal Growth 335 (2011) 148-159], is further examined using a parametric sensitivity computation derived by linearizing the nonlinear model around a quasi-steady-state (QSS). In addition, transient analyses are performed to assess inherent stability and dynamic responses in this μ-PD system. Information from these two approaches enlarges our understanding of this particular process, and the approaches themselves are put forth as valuable complements to classical QSS analysis.

  20. Patients with schizophrenia or schizoaffective disorder who receive multiple electroconvulsive therapy sessions: characteristics, indications, and results

    Directory of Open Access Journals (Sweden)

    Iancu I

    2015-03-01

    Full Text Available Iulian Iancu,* Nimrod Pick,* Orit Seener-Lorsh, Pinhas Dannon Be’er Ya’akov Mental Health Center, affiliated with the Sackler School of Medicine, Tel Aviv University, Tel Aviv, Israel *These authors share first authorship of this paper Background: While electroconvulsive therapy (ECT has been used for many years, there is insufficient research regarding the indications for continuation/maintenance (C/M-ECT, its safety and efficacy, and the characteristics of patients with schizophrenia or schizoaffective disorder who receive multiple ECT sessions. The aims of this study were to characterize a series of patients who received 30 ECT sessions or more, to describe treatment regimens in actual practice, and to examine the results of C/M-ECT in terms of safety and efficacy, especially the effect on aggression and functioning.Methods: We performed a retrospective chart review of 20 consecutive patients (mean age 64.6 years with schizophrenia (n=16 or schizoaffective disorder (n=4 who received at least 30 ECT sessions at our ECT unit, and also interviewed the treating physician and filled out the Clinical Global Impression-Severity, Global Assessment of Functioning, and the Staff Observation Aggression Scale-Revised.Results: Patients received a mean of 91.3 ECT sessions at a mean interval of 2.6 weeks. All had been hospitalized for most or all of the previous 3 years. There were no major adverse effects, and cognitive side effects were relatively minimal (cognitive deficit present for several hours after treatment. We found that ECT significantly reduced scores on the Staff Observation Aggression Scale-Revised subscales for verbal aggression and self-harm, and improved Global Assessment of Functioning scores. There were reductions in total aggression scores, subscale scores for harm to objects and to others, and Clinical Global Impression-Severity scores, these were not statistically significant.Conclusion: C/M-ECT is safe and effective for

  1. Multimode interference and a white light scanning Michelson interferometer with a 400-mm sapphire fiber sensing head

    Science.gov (United States)

    Li, Tianchu; May, Russell G.; Wang, Anbo; Claus, Richard O.

    1998-08-01

    In this paper we present the analysis of multimode (MM) interference induced by MM fiber interferometers and report the development of a white light scanning fiber Michelson interferometer with a sapphire fiber sensing head for the measurement of position-distance at high temperatures. The 'mode fading' effect in standard graded 50/125 micrometers fiber and independent 'inter-mode interference' in 100 micrometers step index profile fiber are discussed. By means of the 'mode selecting' technique, proposed and developed in this work, we demonstrated white light fringes with signal to noise ratios of more than 12 with a sensing head composed of a 400 mm long lead sapphire fiber and an uncoated sapphire target fiber.

  2. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  3. Teaching Motivations, Characteristics and Professional Growth: Results from the Great Expectations (GE) Programme in the United States

    Science.gov (United States)

    Thomson, Margareta Maria; Turner, Jeannine

    2015-01-01

    This present study sought to explore reasons given by K-12 teachers about their motivation to remain in teaching, their motivation for engaging in professional development, and characteristics of their teaching. Participants (N = 151) were public teachers of different grade levels from the USA enrolled in a one-week professional development…

  4. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  5. Influence of Cr and W alloying on the fiber-matrix interfacial shear strength in cast and directionally solidified sapphire NiAl composites

    Science.gov (United States)

    Asthana, R.; Tiwari, R.; Tewari, S. N.

    1995-01-01

    Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.

  6. Optogenetic activation of neocortical neurons in vivo with a sapphire-based micro-scale LED probe

    Directory of Open Access Journals (Sweden)

    Niall eMcAlinden

    2015-05-01

    Full Text Available Optogenetics has proven to be a revolutionary technology in neuroscience and has advanced continuously over the past decade. However, optical stimulation technologies for in vivo need to be developed to match the advances in genetics and biochemistry that have driven this field. In particular, conventional approaches for in vivo optical illumination have a limitation on the achievable spatio-temporal resolution. Here we utilize a sapphire-based microscale gallium nitride light-emitting diode (µLED probe to activate neocortical neurons in vivo. The probes were designed to contain independently controllable multiple µLEDs, emitting at 450 nm wavelength with an irradiance of up to 2 W/mm2. Monte-Carlo stimulations predicted that optical stimulation using a µLED can modulate neural activity within a localized region. To validate this prediction, we tested this probe in the mouse neocortex that expressed channelrhodopsin-2 (ChR2 and compared the results with optical stimulation through a fiber at the cortical surface. We confirmed that both approaches reliably induced action potentials in cortical neurons and that the µLED probe evoked strong responses in deep neurons. Due to the possibility to integrate many optical stimulation sites onto a single shank, the µLED probe is thus a promising approach to control neurons locally in vivo.

  7. Density functional calculations of graphene-based humidity and carbon dioxide sensors: effect of silica and sapphire substrates

    Science.gov (United States)

    Elgammal, Karim; Hugosson, Håkan W.; Smith, Anderson D.; Råsander, Mikael; Bergqvist, Lars; Delin, Anna

    2017-09-01

    We present dispersion-corrected density functional calculations of water and carbon dioxide molecules adsorption on graphene residing on silica and sapphire substrates. The equilibrium positions and bonding distances for the molecules are determined. Water is found to prefer the hollow site in the center of the graphene hexagon, whereas carbon dioxide prefers sites bridging carbon-carbon bonds as well as sites directly on top of carbon atoms. The energy differences between different sites are however minute - typically just a few tenths of a millielectronvolt. Overall, the molecule-graphene bonding distances are found to be in the range 3.1-3.3 Å. The carbon dioxide binding energy to graphene is found to be almost twice that of the water binding energy (around 0.17 eV compared to around 0.09 eV). The present results compare well with previous calculations, where available. Using charge density differences, we also qualitatively illustrate the effect of the different substrates and molecules on the electronic structure of the graphene sheet.

  8. Strength degradation mechanisms in h-BN/NiAl coated sapphire fibres with a reactive Hf or Y interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Hajas, D.E. [Materials Chemistry, RWTH-Aachen University, Kopernikusstr. 16, 52074 Aachen (Germany)], E-mail: hajas@mch.rwth-aachen.de; Kyrsta, S. [Materials Chemistry, RWTH-Aachen University, Kopernikusstr. 16, 52074 Aachen (Germany); Richter, S.; Mayer, J. [Central Facility of Electron Microscopy, RWTH-Aachen University, Ahornstrasse 55, 52074 Aachen (Germany); Schneider, J.M. [Materials Chemistry, RWTH-Aachen University, Kopernikusstr. 16, 52074 Aachen (Germany)

    2008-09-15

    NiAl strengthened with ceramic fibres is considered as a load-bearing component in the combustion zone turbine blades. Sapphire fibres coated with hexagonal-boron nitride (h-BN) and Y (or Hf) interlayers and NiAl were investigated to strengthen the fibre matrix interface by compound formation with the transition metals introduced. Our goal is to identify strength degradation relevant mechanisms active during composite formation and application. Therefore, the tensile strength of coated fibres before and after annealing was measured to simulate the effect of composite fabrication. Strength degradation mechanisms were identified by electron microscopy. Chemical reactions between Y or Hf and Al{sub 2}O{sub 3}, as well as surface diffusion of Al{sub 2}O{sub 3} into irregularities in the adjacent coating, alter the surface morphology and may act as crack initiation sites. Based on these results, future strategies for avoiding or minimizing strength degradation during production of intermetallic matrix composites (IMCs) can be compiled.

  9. Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Vlasov, V. P.; Kanevsky, V. M.

    2016-11-01

    The growth of cadmium telluride films on a structured (0001) sapphire surface oriented at an angle of 44° to the vapor-flow direction and normal to the steps formed along the 11overline 2 0 direction is studied. It is found that this geometry of the vapor source and a substrate (heated to a temperature of 300°C) provides the growth of single-crystal CdTe films if a step height on the substrate surface is more than 1 nm. The results are explained by the occurrence of a longitudinal component of the diffusion flux of CdTe molecules and atoms toward the steps from the inner side and their high density at the step edge from the outer side due to the presence of the Ehrlich-Schwoebel barrier, which ensures the efficient supply of material and minimum supersaturation necessary for the nucleation at the step edge and growth of oriented CdTe islands. The cadmium telluride films that are grown have the ( {110} )[ {1overline 1 0} ]CdTe| {( {0001} )} .[ {11overline 2 0} ]A{l_2}{O_3} orientation and a composition similar to stoichiometric CdTe.

  10. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intra- cavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  11. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  12. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    ZHAO YanYing; WANG Peng; ZHANG Wei; TIAN JinRong; WEI ZhiYi

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intracavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  13. Demonstrating the feasibility of heat extraction through sapphire fibers for the GW observatory KAGRA

    CERN Document Server

    Khalaidovski, Alexander; Chen, Dan; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Alan O; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka observatory. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise and suspended from multi-stage pendulums to reduce seismic noise. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as originating from thermal radiation will need to be extracted through the last suspension stage. This stage will consist of four thin sapphire fibers with larger heads necessary to connect the fibers to both the mirror and the upper stage. In this paper, we discuss heat conductivity measurements on different fiber candidates. While all fibers had a diameter of 1.6mm, different surface treatments and approaches to attach the heads were analyzed. Our measurements show that fibers fulfilling the basic KAGRA heat conductivity requirement of $\\kappa\\geq\\,$5000 W/m/K at 20K are technologically feasible.

  14. Design and construction of a tunable pulsed Ti:sapphire laser

    Science.gov (United States)

    Panahi, Omid; Nazeri, Majid; Tavassoli, Seyed Hassan

    2015-02-01

    In this paper, design and constr uction of a tunable pulsed Ti:sapphire laser and numerical solution of the corresponding rate equations are reported. Rate equations for a four-level system are written and their numerical solution is examined. Furthermore, an optical setup is introduced. In this setup, a Ti:sapphire crystal is longitudinally pumped by the second harmonics of a Q-Switched Nd:YAG laser, and a prism is used as a wavelength-selective element as well. This setup is established for two 10 and 50 % transmission output couplers. In case of using the 10 % coupler, the output energy of the laser, for the pump energy of 36 mJ, is pulses with 3.5 mJ energy and for the 50 % coupler, with 50 mJ of pump energy, pulses with 10 mJ energy are generated. A wavelength tuning range of more than 160 nm is possible. The repetition rate of this laser is 10 Hz and the temporal duration of the pulses is about 30 ns.

  15. The Structure of Sapphire Implanted with Carbon at Room Temperature and 1000° C

    Science.gov (United States)

    Alves, E.; Marques, C.; Safran, G.; McHargue, Carl J.

    2009-03-01

    Carbon was implanted into sapphire at various temperatures as part of a study of the different defect structures produced by a series of light ions. Implantations were made with 150 keV ions to fluences of 1×1016 and 1×1017ions/cm2 at room temperature (RT) and 1000° C. The defect structures were characterized using Rutherford backscattering-channeling (RBS-C) and transmission electron microscopy (TEM). The RBS-C spectra indicated low residual disorder for RT implantation at 1×1016 C+/cm2. The de-channeling approached the random value at 1×1017 C+/cm2 and the TEM examination revealed a buried amorphous layer containing embedded sapphire nanocrystals. Damaged layers containing planar defects generally aligned parallel to the surface surrounded this layer. The RBS-C spectra for the sample implanted at 1000° C with 1×1017C+/cm2 suggested a highly damaged but crystalline surface that was confirmed by TEM micrographs.

  16. Study of the defects in GaN epitaxial films grown on sapphire by HVPE

    Science.gov (United States)

    Liu, Zhanhui; Xiu, Xiangqian; Chen, Lin; Zhang, Rong; Xie, Zili; Han, Ping; Shi, Yi; Gu, Shulin; Zheng, Youdou

    2008-02-01

    In this paper, the defects in hexagonal GaN epitaxial layers grown on (0001) sapphire (Al IIO 3) substrates by HVPE with a horizontal tube reactor had been studied. The GaN epitaxial layers were etched by means of defect-selective etching (Orthodox etching in molten KOH). The samples were characterized by Scanning Electron Microscopy (SEM) and Cathodoluminescence spectra (CL). From surface morphology and cross-sectional images, the defects could be divided into various types: cracks, low angle grain boundary (LAGB), nano-pipes and dislocations. These different defects were discussed. The cracks were proposed as related to the strain. And the strain could not only come from the lattice mismatch and thermal mismatch between sapphire and GaN layer in their interface, but also from the HVPE growth process. It was found that these screw, mixed and edge type dislocations formed small hexagonal pits after etching. Some pits would be observed in the area near LAGB. Additionally, by CL mapping technique, some non-radiative recombination centers without surface terminations could be probed optically.

  17. Gold wetting effects on sapphire irradiated with GeV uranium ions

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, S.M.M. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Canut, B. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Fornazero, J. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Thevenard, P. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Toulemonde, M. [Centre Interdisciplinaire de Recherche avec les Ions Lourds (CIRIL), Boulevard A. Becquerel, 14040 Caen Cedex (France)

    1997-02-01

    Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated with {sup 238}U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of {approx}80 K, with fluences ranging from 1.2 x 10{sup 12} to 2.5 x 10{sup 12} ions cm{sup -2}. After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.).

  18. Ultra stable and very low noise signal source using a cryocooled sapphire oscillator for VLBI

    CERN Document Server

    Nand, Nitin R; Ivanov, Eugene N; Santarelli, Giorgio

    2011-01-01

    Here we present the design and implementation of a novel frequency synthesizer based on low phase noise digital dividers and a direct digital synthesizer. The synthesis produces two low noise accurate and tunable signals at 10 MHz and 100 MHz. We report on the measured residual phase noise and frequency stability of the synthesizer, and estimate the total frequency stability, which can be expected from the synthesizer seeded with a signal near 11.2 GHz from an ultra-stable cryocooled sapphire oscillator. The synthesizer residual single sideband phase noise, at 1 Hz offset, on 10 MHz and 100 MHz signals, respectively, were measured to be -135 dBc/Hz and -130 dBc/Hz. Their intrinsic frequency stability contributions, on the 10 MHz and 100 MHz signals, respectively, were measured as sigma_y = 9 x 10^-15 and sigma_y = 2.2 x 10^-15, at 1 s integration time. The Allan Deviation of the total fractional frequency noise on the 10 MHz and 100 MHz signals derived from the synthesizer with the cryocooled sapphire oscilla...

  19. DC-powered Fe3+:sapphire Maser and its Sensitivity to Ultraviolet Light

    CERN Document Server

    Oxborrow, Mark; Kersalé, Yann; Giordano, Vincent

    2010-01-01

    The zero-field Fe3+:sapphire whispering-gallery-mode maser oscillator exhibits several alluring features: Its output is many orders of magnitude brighter than that of an active hydrogen maser and thus far less degraded by spontaneous-emission (Schawlow-Townes) and/or receiving-amplifier noise. Its oscillator loop is confined to a piece of mono-crystalline rock bolted into a metal can. Its quiet amplification combined with high resonator Q provide the ingredients for exceptionally low phase noise. We here concentrate on novelties addressing the fundamental conundrums and technical challenges that impede progress. (1) Roasting: The "mase-ability" of sapphire depends significantly on the chemical conditions under which it is grown and heat-treated. We provide some fresh details and nuances here. (2) Simplification: This paper obviates the need for a Ka-band synthesizer: it describes how a 31.3 GHz loop oscillator, operating on the preferred WG pump mode, incorporating Pound locking, was built from low-cost compo...

  20. Materials processing by use of a Ti:Sapphire laser with automatically-adjustable pulse duration

    Science.gov (United States)

    Kamata, M.; Imahoko, T.; Ozono, K.; Obara, M.

    We have developed an automatic pulsewidth-adjustable femtosecond Ti:Sapphire laser system that can generate an output of 50 fs-1 ps in duration, and sub-mJ/pulse at a repetition rate of 1 kpps. The automatic pulse compressor enables one to control the pulsewidth in the range of 50 fs-1 ps by use of a personal computer (PC). The compressor can change the distance in-between and the tilt angle of the grating pairs by use of two stepping motors and two piezo-electric transducer(PZT) driven actuators, respectively. Both are controlled by a PC. Therefore, not only control of the pulsewidth, but also of the optical chirp becomes easy. By use of this femtosecond laser system, we fabricated a waveguide in fused quartz. The numerical aperture is chosen to 0.007 to loosely focus the femtosecond laser. The fabricated waveguides are well controllable by the incident laser pulsewidth. We also demonstrated the ablation processing of hydroxyapatite (Ca10(PO4)6(OH)2), which is a key component of human tooth and human bone for orthopedics and dentistry. With pulsewidth tunable output from 50 fs through 2 ps at 1 kpps, the chemical content of calcium and phosphorus is kept unchanged before and after 50-fs-2-ps laser ablation. We also demonstrated the precise ablation processing of human tooth enamel with 2 ps Ti:Sapphire laser.

  1. Comparative pathogenicity of four strains of Aleutian disease virus for pastel and sapphire mink.

    Science.gov (United States)

    Hadlow, W J; Race, R E; Kennedy, R C

    1983-09-01

    Information was sought on the comparative pathogenicity of four North American strains (isolates) of Aleutian disease virus for royal pastel (a non-Aleutian genotype) and sapphire (an Aleutian genotype) mink. The four strains (Utah-1, Ontario [Canada], Montana, and Pullman [Washington]), all of mink origin, were inoculated intraperitoneally and intranasally in serial 10-fold dilutions. As indicated by the appearance of specific antibody (counterimmunoelectrophoresis test), all strains readily infected both color phases of mink, and all strains were equally pathogenic for sapphire mink. Not all strains, however, regularly caused Aleutian disease in pastel mink. Infection of pastel mink with the Utah-1 strain invariably led to fatal disease. Infection with the Ontario strain caused fatal disease nearly as often. The Pullman strain, by contrast, almost never caused disease in infected pastel mink. The pathogenicity of the Montana strain for this color phase was between these extremes. These findings emphasize the need to distinguish between infection and disease when mink are exposed to Aleutian disease virus. The distinction has important implications for understanding the natural history of Aleutian disease virus infection in ranch mink.

  2. A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

    Science.gov (United States)

    Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Suria, Ateeq J.; Chapin, Caitlin A.; Senesky, Debbie G.

    2016-09-01

    A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

  3. Tunable Single-Frequency Intracavity Frequency-Doubled Ti:Sapphire Laser around 461 nm

    Institute of Scientific and Technical Information of China (English)

    李凤琴; 石柱; 李永民; 彭堃墀

    2011-01-01

    We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser.The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours.The frequency stability is better than ±2.22 MHz over 10min when the laser is locked to a confocal Fabry-Perot cavity.A three-plate birefringent filter allows for the tunable range from 457nm to 467nm,which covers the absorption line of the strontium atoms(460.86nm).%We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser. The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours. The frequency stability is better than ±2.22MHz over lOmin when the laser is locked to a confocal Fabry-Perot cavity. A three-plate birefringent filter allows for the tunable range from 457nm to 467 nm, which covers the absorption line of the strontium atoms (460.86 nm).

  4. [Activation-dependent characteristics of the electroencephalogram during visual information--processing: Results of an automatic interval analysis (author's transl)].

    Science.gov (United States)

    Bastek, R; Gille, H G; Gruner, P; Otto, E; Ullsperger, P

    1976-01-01

    EEG signal from fronto-occipital derivation was recorded in 16 Ss during a mental performance test (modified "Konzentrations-Leistungs-Test" including four levels of performance). A balanced changer-over design was used. Interval histograms in four frequency bands (theta, alpha, beta-1 and beta-2 bands) were determined on the basis of peak detection. A total of 44 characteristics were derived and tested (multi-factor analyses of variance, multiple mean comparison and rank tests). Twenty eight of these characteristics were proved to be dependent on activation. In the visual information-processing performances chosen, it could be demonstrated that the intraindividual changes of the spontaneous EEG activity were related predominantly to the perceptual components of the performance. On the other hand, the influence of the performance rate and of the mental-arithmetic itself was of minor relevance. During higher activation an increase in the relative abudance of the theta-band activity was also observed.

  5. Wave propagation characteristics of helically orthotropic cylindrical shells and resonance emergence in scattered acoustic field. Part 2. Numerical results

    Science.gov (United States)

    Rajabi, Majid

    2016-09-01

    In the present work as the second part of the research work on wave propagation characteristics of helically orthotropic cylindrical shells, the main aim is to use the developed solution for resonance isolation and identification of an air-filled and water submerged Graphite/Epoxy cylindrical shell and quantitative sensitivity analysis of excited resonance frequencies to the perturbation in the material's elastic constants. The physical justifications are presented for the singular features associated with the stimulated resonance frequencies according to their style of propagation and polarization, induced stress-strain fields and wave type. For evaluation purposes, the wave propagation characteristics of the anisotropic shell and the far-field form function amplitude of a limiting case are considered and good agreement with the solutions available in the literature is established.

  6. The Growth Characteristics of Patients with Noonan Syndrome: Results of Three Years of Growth Hormone Treatment: A Nationwide Multicenter Study

    OpenAIRE

    Şıklar, Zeynep; Genens, Mikayir; Poyrazoğlu, Şükran; Baş, Firdevs; Darendeliler, Feyza; Bundak, Rüveyde; AYCAN, ZEHRA; Savaş Erdeve, Şenay; Çetinkaya, Semra; Güven, Ayla; Abalı, Saygın; ATAY, Zeynep; Turan, Serap; KARA, Cengiz; Can Yılmaz, Gülay

    2016-01-01

    Objective: Noonan syndrome (NS) is a multisystem disorder, and short stature is its most striking manifestation. Optimal growth hormone (GH) treatment for NS is still controversial. In this study, using a nationwide registration system, we aimed to evaluate the growth characteristics and the clinical features of NS patients in Turkey and their growth response to GH treatment. Methods: Children and adolescents with a diagnosis of NS were included inthe study. Laboratory assessment including st...

  7. Aging stability of complete blood count and white blood cell differential parameters analyzed by Abbott CELL-DYN Sapphire hematology analyzer.

    Science.gov (United States)

    Hedberg, P; Lehto, T

    2009-02-01

    This study presents the results of an aging stability study of complete blood count (CBC) and leukocyte differential parameters using the Abbott CELL-DYN Sapphire hematology analyzer. Stability studies showed no substantial change in CBC parameters up to 24-48 h at +23 +/- 2 degrees C (room temperature), except for optical platelet count (PLTo). For specimens aged over 24, the value of impedance platelet count yielded more reliable results than the routine PLTo. White blood cell (WBC) differential parameters, except eosinophils, were stable for up to 48 h at +23 +/- 2 degrees C. CBC parameters were stable for 72 h, except mean platelet volume, which slightly increased between 48 and 72 h, at +4 degrees C. WBC differentials were stable 48-72 h, with a slight decrease observed in absolute neutrophils and lymphocytes at +4 degrees C.

  8. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

    Directory of Open Access Journals (Sweden)

    Yu-An Chen

    2014-01-01

    Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

  9. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    Directory of Open Access Journals (Sweden)

    Teng Jiang

    2016-03-01

    Full Text Available The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  10. Potential Relationship between Season of Birth and Clinical Characteristics in Major Depressive Disorder in Koreans: Results from the CRESCEND Study.

    Science.gov (United States)

    Park, Seon-Cheol; Sakong, Jeong-Kyu; Koo, Bon Hoon; Kim, Jae-Min; Jun, Tae-Youn; Lee, Min-Soo; Kim, Jung-Bum; Yim, Hyeon-Woo; Park, Yong Chon

    2016-05-01

    We aimed to examine the potential relationship between season of birth (SOB) and clinical characteristics in Korean patients with unipolar non-psychotic major depressive disorder (MDD). Using data from the Clinical Research Center for Depression (CRESCEND) study in South Korea, 891 MDD patients were divided into two groups, those born in spring/summer (n=457) and those born in autumn/winter (n=434). Measurement tools comprising the Hamilton Depression Rating Scale, Hamilton Anxiety Rating Scale, Brief Psychiatric Rating Scale, Scale for Suicidal Ideation, Clinical Global Impression of severity, Social and Occupation Functional Assessment Scale, WHO Quality of Life assessment instrument-abbreviated version, Alcohol Use Disorder Identification Test, and Temperament and Character Inventory were used to evaluate depression, anxiety, overall symptoms, suicidal ideation, global severity, social function, quality of life, drinking, and temperament and character, respectively. Using independent t-tests for continuous variables and χ² tests for discrete variables, the clinical characteristics of the two groups were compared. MDD patients born in spring/summer were on average younger at onset of first depressive episode (t=2.084, p=0.038), had greater loss of concentration (χ²=4.589, p=0.032), and were more self-directed (t=2.256, p=0.025) than those born in autumn/winter. Clinically, there was a trend for the MDD patients born in spring/summer to display the contradictory characteristics of more severe clinical course and less illness burden; this may have been partly due to a paradoxical effect of the 5-HT system.

  11. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  12. A sapphire tube atomizer for on-line atomization and in situ collection of bismuthine for atomic absorption spectrometry

    OpenAIRE

    Musil, S. (Stanislav); Dědina, J. (Jiří)

    2013-01-01

    Sapphire was tested as a new material for volatile species atomizers and bismuthine was chosen as a convenient model for volatile species. Its performance was compared with a quartz atomizer in both modes of operation - on-line atomization versus in situ collection.

  13. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  14. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, M.; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  15. Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; Eason, R.W.; Laversenne, L.; Moretti, P.; Borca, C.N.; Pollnau, M.

    2006-01-01

    Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near 780 nm was demonstrated at room temperature at an absorbed pump power t

  16. Ti:sapphire rib waveguides as single-transverse-mode broadband fluorescence sources for optical coherence tomography applications

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Ar+-beam-milled rib waveguides in pulsed-laser-deposited Ti:sapphire layers show broadband single transverse mode fluorescence emission at output powers up to 300 μW and propagation losses comparable to those in unstructured planar waveguide counterparts.

  17. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    Science.gov (United States)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2-CO gas atmosphere at 1923-1973 K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2-CO gas atmosphere. The thermodynamic principle of the N2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N2-CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  18. Effects of gamma radiation on sprouting turmeric rhizome and the quality and resulting characteristics in powdered form

    Energy Technology Data Exchange (ETDEWEB)

    Peret-Almeida, Lucia [UNI-BH, Centro Universitario de Belo Horizonte, MG (Brazil); Junqueira, Roberto Goncalves; Gloria, Maria Beatriz A. [Universidade Federal de Minas Gerais (FAFAR/UFMG), Belo Horizonte, MG (Brazil). Fac. de Farmacia

    2008-07-01

    Rhizomes were submitted to doses of 0.00, 0.05, 0.10 and 0.15 kGy and stored at 26 {+-} 1 deg C and 85% relative humidity for 135 days. In 45 day intervals samples were collected for analysis of the rhizomes and processed into ground turmeric. The higher the dose the longer the time required for sprouting. At 0.15 kGy there was no sprouting up to 135 days of storage, however callus started to appear. The levels of curcuminoid pigments in ground turmeric were not affected by irradiation dose; however they varied with storage time. The CIE L{sup *}a{sup *}b{sup *} color characteristics of ground turmeric were not affected by radiation dose, but changed with storage time, except for 0.15 kGy. (author)

  19. Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Hsu-Hung Hsueh

    2016-01-01

    Full Text Available The flat-top pyramid patterned sapphire substrates (FTP-PSSs have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μm, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002 plane for the GaN epilayers grown on conventional sapphire substrate (CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102 plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.

  20. Narrow-linewidth chirped frequency comb from a frequency-shifted feedback Ti:sapphire laser seeded by a phase-modulated single-frequency fiber laser.

    Science.gov (United States)

    Brandl, Matthias F; Mücke, Oliver D

    2010-12-15

    Frequency-shifted feedback (FSF) lasers have emerged as powerful tools for precision distance metrology. At the output of a Michelson interferometer, the detected rf spectra of the FSF laser light contain a length-dependent heterodyne beat signal whose linewidth ultimately limits the achievable accuracy of length measurements. Here, we demonstrate a narrow-linewidth chirped frequency comb from an FSF Ti:sapphire ring laser seeded by a phase-modulated, ultra-low-phase-noise, single-frequency fiber laser. We experimentally investigate the influence of the seed laser linewidth on the resulting width and shape of the length-dependent rf beat signal. An ultranarrow heterodyne beat linewidth of <20 Hz is observed.

  1. Preparation of AlGaN/GaN Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure

    Institute of Scientific and Technical Information of China (English)

    ZHOU Yu-Gang; ZHENG You-Dou; SHEN Bo; ZHANG Rong; LI Wei-Ping; CHEN Peng; CHEN Zhi-Zhong; GU Shu-Lin; SHI Yi; Z. C. Huang

    2000-01-01

    AlGaN/GaN heterostructures on sapphire substrate were fabricated by using light radiation heating metalor ganic chemical vapor deposition. Photoluminescence excitation spectra show that there are two abrupt slopes corresponding to the absorption edges of AlGaN and GaN, respectively. X-ray diffraction spectra clearly exhibit the GaN (0002), (0004), and A1GaN (0002), (0004) diffraction peaks, and no diffraction peak other than those from the GaN {0001} and A1GaN {0001} planes is found. Reciprocal space mapping indicates that there is no tilt between the AlGaN layer and the GaN layer. All results also indicate that the sample is of sound quality and the Al composition in the AlGaN layer is of high uniformity.

  2. Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Si-doped (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate was obtained by metal organic chemical vapor deposition.The optical and electrical properties of the Si-doped a-plane GaN films were investigated by photoluminescence spectroscopy,high-resolution X-ray diffraction,atomic force microscopy and Hall measurement.The results showed that the morphology and the crystal quality slightly degraded with Si doping.The yellow luminescence was enhanced with increasing the flow rate of the SiH4.The significant improvement of the mobility should associate with some of the vacancy filled with the Si.

  3. Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    DING Bin-Feng

    2012-01-01

    A ZnO layer with rather good crystalline quality (Xmin =9.4%) is grown on a sapphire substrate by plasma enhanced chemical vapor deposition (PECVD).Rutherford backscattering (RBS)/channeling and high-resolution x-ray diffraction (XRD) are used to characterize the elastic strain in the ZnO epilayer.The tetragonal distortion is positive and depth dependent.It is highest near the interface and decreases towards the sample surface.By combining the results of RBS and XRD,the average elastic strains in the parallel and the perpendicular directions can be calculated to be 0.50% and -0.17%,respectively.

  4. Electrical and optical properties of VO2 thin films grown on various sapphire substrates by using RF sputtering deposition

    Science.gov (United States)

    Jung, Dae Ho; So, Hyeon Seob; Ko, Kun Hee; Park, Jun Woo; Lee, Hosun; Nguyen, Trang Thi Thu; Yoon, Seokhyun

    2016-12-01

    VO2 thin films were grown on a-, c-, m-, and r-plane sapphire and SiO2/Si substrates under identical conditions by using RF sputtering deposition from a VO2 target. The structural and the morphological properties of all VO2 films were investigated. The grain sizes of the VO2 films varied between 268 nm and 355 nm depending on the substrate's orientation. The electrical and the optical properties of all VO2 thin films were examined in detail. The metal-insulator transition temperature (TMI) varied with the substrate's orientation. The (200)/(bar 211 )-oriented VO2 films on the a-plane sapphire showed the lowest TMI of about 329.3 K (56.3 °C) while the (020)/(002)-VO2 films on the c-plane sapphire displayed the highest TMI of about 339.6 K (66.6 °C). The VO2 films showed reversible changes in the resistivity as large as 1.19 × 105 and a hysteresis of 2 K upon traversing the transition temperature. The variations observed in the TMI with respect to the substrate's orientation were due to changes in the lattice strain and the grain size distribution. Raman spectroscopy showed that metal (rutile) - insulator (monoclinic) transitions occurred via the M2 phase for VO2 films on the c-plane substrate rather than the direct M1 to rutile transition. The shifts in the phonon frequencies of the VO2 film grown on various sapphire substrates were explained in terms of the strain along the V-V atomic bond direction (cR). Our work shows a possible correlation between the transition parameters ( e.g., TMI, sharpness, and hysteresis width) and the width ( σ) of the grain size distribution. It also shows a possible correlation between the TMI and the resistivities at the insulating and the metallic phases for VO2 films grown on various sapphire substrates.

  5. Efficient Spherical Wavefront Correction near the Focus for the 0.89 PW/29.0 fs Ti:Sapphire Laser Beam

    Institute of Scientific and Technical Information of China (English)

    REN Zhi-Jun; LIANG Xiao-Yan; YU Liang-Hong; LU Xiao-Ming; LENG Yu-Xin; LI Ru-Xin; XU Zhi-Zhan

    2011-01-01

    We demonstrate a new loop system of the spherical wavefront (SW) correction near the beam focus to effectively improve the focusability of 0.89 PW/29.0 fs Ti:sapphire chirped pulse amplification laser. After wavefront correction, the Strehl ratio is improved to reach 0.91, and the focal spot size using the fl4 off-axis parabola is reduced to 6.34 × 6.94μm2 (corresponding to 1.63 × 1.78 times diffraction limitation). With full peak power of 0.89 PW,the peak intensity of 2.59 × 1021 W/cm2 is obtained. The experimental results show that the SW correction scheme near the beam focus is comparatively simple, economic and high-efficient.%@@ We demonstrate a new loop system of the spherical wavefront (SW) correction near the beam focus to effectively improve the focusability of 0.89 PW/29.0 fs Ti:sapphire chirped pulse amplification laser.After wavefront correction, the Strehl ratio is improved to reach 0.91, and the focal spot size using the f/4 off-axis parabola is reduced to 6.34 x 6.94μm2 (corresponding to 1.63 x 1.78 times diffraction limitation).With full peak power of 0.89 PW, the peak intensity of 2.59 x 1021 W/cm2 is obtained.The experimental results show that the SW correction scheme near the beam focus is comparatively simple, economic and high-efficient.

  6. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  7. Nanosecond optical transmission studies of laser annealing in ion-implanted silicon-on-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Lee, M.C.; Lo, H.W.; Aydinli, A.; Trott, G.J.; Compaan, A. (Kansas State Univ., Manhattan (USA). Dept. of Physics); Hale, E.B. (Missouri Univ., Rolla (USA). Dept. of Physics)

    1983-06-01

    Time-resolved optical transmission has been studied using 633 and 514 nm CW probes on ion-implantation-amorphized silicon-on-sapphire during annealing by a 10 nsec, approximately 1 J/cm/sup 2/ pulse at either 532 nm or 485 nm. As recrystallization sets in the transmitted signal at 514 nm rises by approximately 10/sup 3/ in approximately 60 nsec and provides a measure of regrowth velocity. Beyond 200 nsec the much slower transmission rise is used to provide an estimate of the Si cooling rate. The difference in transmission observed between initially crystalline and initially amorphous Si provide an estimate of the latent heat of recrystallization of the amorphous phase.

  8. The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

    Science.gov (United States)

    Alexeev, P.; Asadchikov, V.; Bessas, D.; Butashin, A.; Deryabin, A.; Dill, F.-U.; Ehnes, A.; Herlitschke, M.; Hermann, R. P.; Jafari, A.; Prokhorov, I.; Roshchin, B.; Röhlsberger, R.; Schlage, K.; Sergueev, I.; Siemens, A.; Wille, H.-C.

    2016-12-01

    We report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on Mössbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with 119Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. The device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like 151Eu, 149Sm, 161Dy, 125Te and 121Sb.

  9. Nanostructured sapphire vicinal surfaces as templates for the growth of self-organized oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Thune, E., E-mail: elsa.thune@unilim.fr [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Boulle, A. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Babonneau, D.; Pailloux, F. [Laboratoire de Physique des Materiaux (PHYMAT), UMR CNRS 6630, Universite de Poitiers, Boulevard Marie et Pierre Curie - Teleport 2, BP 30179, F-86962 Futuroscope - Chasseneuil Cedex (France); Hamd, W.; Guinebretiere, R. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France)

    2009-11-15

    Vicinal substrates of sapphire with miscut angle of 10 deg. from the (0 0 1) planes towards the [1 1 0] direction have been annealed in air in the range from 1000 to 1500 deg. C. The behaviour of these surfaces has been characterized as a function of the temperature and the thermal treatment time by Atomic Force Microscopy observations. A thermal treatment at 1250 deg. C allows to stabilize a surface made of periodically spaced nanosized step-bunches. Such stepped surfaces were used as template to grow self-patterned epitaxial oxide nanoparticles by thermal annealing of yttria-stabilized zirconia thin films produced by sol-gel dip-coating. Grazing Incidence Small Angle X-ray Scattering and High-Resolution Transmission Electron Microscopy were used to study the morphology of the nanoparticles and their epitaxial relationships with the substrate.

  10. Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

    Science.gov (United States)

    Yadav, Amit; Kbashi, Hani; Kolpakov, Stanislav; Gordon, Neil; Zhou, Kaiming; Rafailov, Edik U.

    2017-05-01

    The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green-violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as "stealth dicing". The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

  11. All-solid-state narrow-linewidth 455-nm blue laser based on Ti: sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    Shankui Rong; Xiaolei Zhu; Weibiao Chen

    2009-01-01

    A compact, all-solid-state, narrow-linewidth, pulsed 455-nm blue laser based on Ti:sapphire crystal is developed. Pumped by a 10-Hz, frequency-doubled all-solid-state Nd:YAG laser and injection-seeded by an external cavity laser diode, the narrow-linewidth 910-nm laser with pulse width of 20 ns is obtained from a Tirsapphire laser. 3.43-mJ blue laser can be obtained from the laser system by frequency-doubling with BBO crystal. This research is very useful to determine the roadmap of developing the practical, high power blue laser. This kind of laser will have potential application for underwater communication.

  12. Containerless laser-induced fluorescence study of vaporization and optical properties for sapphire and alumina

    Energy Technology Data Exchange (ETDEWEB)

    Nordine, P.C.; Schiffman, R.A. (Midwest Research Institute, Kansas City, MO (USA) Yale Univ., New Haven, CT (USA))

    1988-09-01

    Evaporation of aluminum oxide was studied from 1,800 to 2,327 K by laser-induced fluorescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO{sub 2} laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al{sub 2}O{sub 3}. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

  13. Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Xu, S.R., E-mail: shengruixidian@126.com [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Li, P.X. [School of Technical Physics, Xidian University, Xi’an 710071 (China); Zhang, J.C.; Jiang, T. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Ma, J.J. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); School of Technical Physics, Xidian University, Xi’an 710071 (China); Lin, Z.Y.; Hao, Y. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China)

    2014-11-25

    Highlights: • The LED structure on PSS was grown by MOCVD. • The distribution of defects in GaN film grown on PSS was investigated by TEM. • The main mechanism of TDs reducing on PSS was revealed. - Abstract: The microstructure of an epilayer structure for the blue light-emitting diode grown on a cone patterned sapphire substrate was characterized by high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy (TEM). Cross-sectional TEM revealed that most of the dislocations, which originated from planar region, propagated laterally toward the cone region during the lateral growth process. This change of the propagation direction prevented the dislocations from penetrate the epitaxy film and thus principally led to a drastic reduction in the threading dislocation density in GaN films. Particularly, we proposed that the six {11"‾01} semipolar facets play a very important role during the bending process.

  14. A 10-Hz Terawatt Class Ti:Sapphire Laser System: Development and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, A.K.; Smedley, J.; Tsang, T.; Rao, T.

    2010-01-12

    We developed a two stage Ti:Sapphire laser system to generate 16 mJ/80fs laser pulses at the pulse repetition rate of 10 Hz. The key deriver for the present design is implementing a highly efficient symmetric confocal pre-amplifier and employing a simple, inexpensive synchronization scheme relying only on a commercial digital delay-generator. We characterized the amplified pulses in spatial-, spectral-, and temporal-domains. The laser system was used to investigate various nonlinear optical processes, and to modify the optical properties of metal- and semiconductor-surfaces. We are currently building a third amplifier to boost the laser power to the multi-terawatt range.

  15. Intra-cavity gain shaping of mode-locked Ti:Sapphire laser oscillations

    CERN Document Server

    Yefet, Shai; Pe'er, Avi

    2015-01-01

    The gain properties of an oscillator strongly affect its behavior. When the gain is homogeneous, different modes compete for gain resources in a `winner takes all' manner, whereas with inhomogeneous gain, modes can coexist if they utilize different gain resources. We demonstrate precise control over the mode competition in a mode locked Ti:sapphire oscillator by manipulation and spectral shaping of the gain properties, thus steering the competition towards a desired, otherwise inaccessible, oscillation. Specifically, by adding a small amount of spectrally shaped inhomogeneous gain to the standard homogeneous gain oscillator, we selectively enhance a desired two-color oscillation, which is inherently unstable to mode competition and could not exist in a purely homogeneous gain oscillator. By tuning the parameters of the additional inhomogeneous gain we flexibly control the center wavelengths, relative intensities and widths of the two colors.

  16. Deposits, flow characteristics, and landscape change resulting from the September 2009 South Pacific tsunami in the Samoan islands.

    Science.gov (United States)

    Richmond, Bruce M; Buckley, Mark; Etienne, Samuel; Chagué-Goff, Catherine; Clark, Kate; Goff, James; Dominey-Howes, Dale; Strotz, Luke

    2011-07-01

    The September 29th 2009 tsunami caused widespread coastal modification within the islands of Samoa and northern Tonga in the South Pacific. Preliminary measurements indicate maximum runup values of around 17 m (Okal et al., 2010) and shore-normal inundation distances of up to ~ 620 m (Jaffe et al., 2010). Geological field reconnaissance studies were conducted as part of an UNESCO-IOC International Tsunami Survey Team survey within three weeks of the event in order to document the erosion, transport, and deposition of sediment by the tsunami. Data collected included: a) general morphology and geological characteristics of the coast, b) evidence of tsunami flow (inundation, flow depth and direction, wave height and runup), c) surficial and subsurface sediment samples including deposit thickness and extent, d) topographic mapping, and e) boulder size and location measurements. Four main types of sedimentary deposits were identified: a) gravel fields consisting mostly of isolated cobbles and boulders, b) sand sheets from a few to ~ 25 cm thick, c) piles of organic (mostly vegetation) and man-made material forming debris ramparts, and d) surface mud deposits that settled from suspension from standing water in the tsunami aftermath. Tsunami deposits within the reef system were not widespread, however, surficial changes to the reefs were observed.

  17. Reliability of the Functional Reach Test and the influence of anthropometric characteristics on test results in subjects with hemiparesis.

    Science.gov (United States)

    Martins, Emerson Fachin; de Menezes, Lidiane Teles; de Sousa, Pedro Henrique Côrtes; de Araujo Barbosa, Paulo Henrique Ferreira; Costa, Abraão Souza

    2012-01-01

    First designed as an alternative method of assessing balance and susceptibility to falls among elderly, the Functional Reach Test (FR) has also been used among patients with hemiparesis. Then this study aimed to describe the intra- and inter-rater and the test/re-test reliability of the FR measure in subjects with and without hemiparesis while verifying anthropometric influences on the measurements. The FR was administered to a sample of subjects with hemiparesis and to a control group that was matched by gender and age. A two-way analysis of variance was used to verify the intra-rater reliability. It was calculated using the differences between the averages of the measures obtained during single, double or triple trials. The intra-class correlation coefficient (ICC) was utilized and data plotted using the Bland-Altman method. Associations were analyzed using Pearson's correlation coefficient. In general, the intra-rater analysis did not show significant differences between the measures for the single, double or triple trials. Excellent ICC values were observed, and there were no significant associations with anthropometric parameters for the hemiparesis and control subjects. FR showed good reliability for patients with and without hemiparesis and the test measurements were not significantly associated with the anthropometric characteristics of the subjects.

  18. Heat transfer results and operational characteristics of the NASA Lewis Research Center hot section cascade test facility

    Science.gov (United States)

    Gladden, H. J.; Yeh, F. C.; Fronek, D. L.

    1985-01-01

    The NASA Lewis Research Center gas turbine hot section test facility has been developed to provide a real-engine environment with well known boundary conditions for the aerothermal performance evaluation/verification of computer design codes. The initial aerothermal research data obtained are presented and the operational characteristics of the facility are discussed. This facility is capable of testing at temperatures and pressures up to 1600 K and 18 atm which corresponds to a vane exit Reynolds number range of 0.5 x 1 million to 2.5 x 1 million based on vane chord. The component cooling air temperature can be independently modulated between 330 and 700 K providing gas-to-coolant temperature ratios similar to current engine application. Research instrumentation of the test components provide conventional pressure and temperature measurements as well as metal temperatures measured by IR-photography. The primary data acquisition mode is steady state through a 704 channel multiplexer/digitizer. The test facility was configured as an annular cascade of full coverage film cooled vanes for the initial series of research tests.

  19. Contemporary clinical characteristics, treatment, and outcomes of angiographically confirmed coronary stent thrombosis: results from a multicenter California registry.

    Science.gov (United States)

    Yeo, Khung Keong; Mahmud, Ehtisham; Armstrong, Ehrin J; Bennett, William E; Shunk, Kendrick A; MacGregor, John S; Li, Zhongmin; Low, Reginald I; Rogers, Jason H

    2012-03-01

    To describe the contemporary treatment and outcomes for patients with angiographically confirmed (definite) stent thrombosis (ST). Limited data are available on contemporary treatment patterns and outcomes of patients with ST in the United States. In this multicenter California registry, consecutive cases of definite ST over 5 years were identified. Clinical characteristics, in-hospital outcomes, and long-term survival are reported. One hundred and sixty five consecutive episodes of ST were identified in 153 patients from January 2005 to February 2010. The distribution of acute (≤24 hr), subacute (24 hr to 30 days), late (30 days to 1 year), and very late (≥1 year) ST was 3.9%, 21.8%, 17.6%, and 50.3%, respectively. Only 41.2% of patients were on dual antiplatelet therapy at the time of presentation, while 22.4% of patients were on none. Of the 61.4% of patients treated with restenting, 71.1% of them received a drug-eluting stent. Procedural success was 88.1%, and in-hospital death, stroke, and CABG occurred in 5.5%, 0.6%, and 6.1% of subjects, respectively. All-cause mortality at 1 year was 14.3%. Although female gender, diabetes mellitus (DM), bifurcation disease, ejection fraction <40%, and cardiogenic shock at the time of presentation were associated with an increased risk of in-hospital mortality, only DM (P = 0.047) and bifurcation disease (P = 0.027) remained independent predictors of in-hospital death. In-hospital mortality from definite ST is lower than previously reported, but long-term mortality remains high. DM and bifurcation disease, but not type of percutaneous therapy, are independently associated with in-hospital mortality. Copyright © 2011 Wiley Periodicals, Inc.

  20. Thermal-hydraulic characteristics of a Westinghouse Model 51 steam generator. Volume 2. Appendix A, numerical results. Interim report. [CALIPSOS code numerical data

    Energy Technology Data Exchange (ETDEWEB)

    Fanselau, R.W.; Thakkar, J.G.; Hiestand, J.W.; Cassell, D.

    1981-03-01

    The Comparative Thermal-Hydraulic Evaluation of Steam Generators program represents an analytical investigation of the thermal-hydraulic characteristics of four PWR steam generators. The analytical tool utilized in this investigation is the CALIPSOS code, a three-dimensional flow distribution code. This report presents the steady state thermal-hydraulic characteristics on the secondary side of a Westinghouse Model 51 steam generator. Details of the CALIPSOS model with accompanying assumptions, operating parameters, and transport correlations are identified. Comprehensive graphical and numerical results are presented to facilitate the desired comparison with other steam generators analyzed by the same flow distribution code.

  1. Effect of Micro Electrical Discharge Machining Process Conditions on Tool Wear Characteristics: Results of an Analytic Study

    DEFF Research Database (Denmark)

    Puthumana, Govindan; P., Rajeev

    2016-01-01

    Micro electrical discharge machining is one of the established techniques to manufacture high aspect ratio features on electrically conductive materials. This paper presents the results and inferences of an analytical study for estimating theeffect of process conditions on tool electrode wear...... characteristicsin micro-EDM process. A new approach with two novel factors anticipated to directly control the material removal mechanism from the tool electrode are proposed; using discharge energyfactor (DEf) and dielectric flushing factor (DFf). The results showed that the correlation between the tool wear rate...

  2. Steady state characteristics of a tilting pad journal bearing with controllable lubrication: Comparison between theoretical and experimental results

    DEFF Research Database (Denmark)

    Cerda Varela, Alejandro Javier; Nielsen, Bo Bjerregaard; Santos, Ilmar

    2013-01-01

    This paper is aimed at presenting results regarding the static and thermal behavior of a tilting-pad journal bearing operating under controllable regime. The bearing is rendered controllable by injecting high pressure oil into the clearance using holes drilled across the bearing pads in the radia...

  3. Design, methods, baseline characteristics and interim results of the Catheter Sampled Blood Archive in Cardiovascular Diseases (CASABLANCA study

    Directory of Open Access Journals (Sweden)

    Hanna K. Gaggin

    2014-11-01

    Conclusions: The CASABLANCA study will examine the role of novel biomarkers and metabolomics for predicting a wide range of cardiovascular, neurologic, and renal complications in patients undergoing angiography. Full results are expected in the latter half of 2014 (ClinicalTrials.Gov # NCT00842868.

  4. PREDICTIVE CONTRIBUTION OF MORPHOLOGICAL CHARACTERISTICS AND MOTOR ABILITIES ON THE RESULT OF RUNNING THE 60m HURDLES IN BOYS AGED 12 - 13 YEARS

    Directory of Open Access Journals (Sweden)

    Zana Bujak

    2014-06-01

    Full Text Available The subject of this study is to determine predictive contributions of morphological characteristics and motor abilities on the 60m hurdles, with an aim to form a group of easily applicable field tests so as to identify boys who are talented in hurdl e racing . The subject sample of this study was comprised of 60 boys aged 12 - 13. The variable sample consisted of a 60m hurdles criterion variable and a set of 13 p re dictor variables comprising of morphological characteristics, speed - strength abilities and the subjects' coordina tion qualities . Applying the regression analysis , the predictive contribution of a complete variable s et of morpholog ical characteristics and motor abilities was determined as an above average statistical significance, influencing 60m hurdle outcome. The greatest individual statistically significant predictive contribution was achieved by the variables of speed - strength quality assessment: 20m flying start r ace result with a standing long jump; and only one variable from the field of morphological characteristics: the shin length. The results support the following conclusion: the two specific variables of speed - strength quality, and 20m flying start race results along with standing long jump , can be relevant predictors of successful outcome in hurdle races .

  5. [Morphological characteristics of the macula in patients with retinal vein occlusion before and after the treatment: preliminary results].

    Science.gov (United States)

    Kazarian, A A; Burladinova, A A; Lebenkova, O A

    2014-01-01

    The article presents examination results of 26 patients with macular edema (ME) due to retinal vein occlusion (RVO) before and 1 month after an intravitreal injection of ranibizumab (Lucentis). Besides routine assessment, retinal spectral-domain optical coherent tomography (OCT) was performed in all cases. In accordance with derived OCT patterns of macular edema the patients were devided into two groups: swelling of the inner and outer retinal layers with serous detachment of neuroepithelium (group 1) and intraretinal edema with pseudocysts (group 2). It is shown that initial OCT features of retina in patients with ME due to RVO are prognostic for treatment results (serous retinal detachment may serve as a preventing factor of photoreceptor damage) and that visual improvement in patients with ME and serous detachment of neuroepithelium anticipates morphological changes.

  6. Characteristics of ejecta and alluvial deposits at Meteor Crater, Arizona and Odessa Craters, Texas: Results from ground penetrating radar

    Science.gov (United States)

    Grant, J. A.; Schultz, P. H.

    1991-01-01

    Previous ground penetrating radar (GRP) studies around 50,000 year old Meteor Crater revealed the potential for rapid, inexpensive, and non-destructive sub-surface investigations for deep reflectors (generally greater than 10 m). New GRP results are summarized focusing the shallow sub-surfaces (1-2 m) around Meteor Crater and the main crater at Odessa. The following subject areas are covered: (1) the thickness, distribution, and nature of the contact between surrounding alluvial deposits and distal ejecta; and (2) stratigraphic relationships between both the ejecta and alluvium derived from both pre and post crater drainages. These results support previous conclusions indicating limited vertical lowering (less than 1 m) of the distal ejecta at Meteor Crater and allow initial assessment of the gradational state if the Odessa craters.

  7. Effect of lime addition during sewage sludge treatment on characteristics of resulting SSA when it is used in cementitious materials.

    Science.gov (United States)

    Vouk, D; Nakic, D; Štirmer, N; Baricevic, A

    2017-02-01

    Final disposal of sewage sludge is important not only in terms of satisfying the regulations, but the aspect of choosing the optimal wastewater treatment technology, including the sludge treatment. In most EU countries, significant amounts of stabilized and dewatered sludge are incinerated, and sewage sludge ash (SSA) is generated as a by product. At the same time, lime is one of the commonly used additives in the sewage sludge treatment primarily to stabilize the sludge. In doing so, the question arose how desirable is such addition of lime if the sludge is subsequently incinerated, and the generated ash is further used in the production of cementitious materials. A series of mortars were prepared where 10-20% of the cement fraction was replaced by SSA. Since all three types of analyzed SSA (without lime, with lime added during sludge stabilization and with extra lime added during sludge incineration) yielded nearly same results, it can be concluded that if sludge incineration is accepted solution, lime addition during sludge treatment is unnecessary even from the standpoint of preserving the pozzolanic properties of the resulting SSA. Results of the research carried out on cement mortars point to the great possibilities of using SSA in concrete industry.

  8. Effect of confinement on breakup of planar liquid sheets sandwiched between two gas streams and resulting spray characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Nath, Sujit [Mechanical Engineering Department, National Institute of Technology, Silchar (India); Mukhopadhyay, Achintya [Mechanical Engineering Department and National Centre for Combustion Research and Development, Indian Institute of Technology Madras, Chennai – 600036 (India); Datta, Amitava [Power Engineering Department, Jadavpur University, Kolkata – 700098 (India); Sarkar, Soumalya; Sen, Swarnendu, E-mail: sujitnath2008@gmail.com [Mechanical Engineering Department, Jadavpur University, Kolkata – 700032 (India)

    2014-02-01

    Breakup of a planar liquid sheet in the presence of confining walls has been investigated using nonlinear stability analysis. The gas streams and the liquid sheet sandwiched between them are considered to be moving. Temporal stability analysis has been done for both sinuous and varicose modes of disturbance. The results show the clear influence of the proximity of confining walls on the stability and breakup of liquid sheets, particularly for the varicose mode where satellite drops are predicted for certain ranges of parameters. The presence of wall leads to shorter breakup lengths but larger drop sizes. (paper)

  9. Expression of an (Engineered) 4,6-α-Glucanotransferase in Potato Results in Changes in Starch Characteristics

    Science.gov (United States)

    Xu, Xuan; Dechesne, Annemarie; Visser, Richard G. F.; Trindade, Luisa M.

    2016-01-01

    Starch structure strongly influences starch physicochemical properties, determining the end uses of starch in various applications. To produce starches with novel structure and exploit the mechanism of starch granule formation, an (engineered) 4, 6-α-glucanotransferase (GTFB) from Lactobacillus reuteri 121 was introduced into two potato genetic backgrounds: amylose-containing line Kardal and amylose-free mutant amf. The resulting starches showed severe changes in granule morphology regardless of genetic backgrounds. Modified starches from amf background exhibited a significant increase in granule size and starch phosphate content relative to the control, while starches from Kardal background displayed a higher digestibility, but did not show changes in granule size and phosphate content. Transcriptome analysis revealed the existence of a mechanism to restore the regular packing of double helices in starch granules, which possibly resulted in the removal of novel glucose chains potentially introduced by the (engineered) GTFB. This amendment mechanics would also explain the difficulties to detect alterations in starch fine structure in the transgenic lines. PMID:27911907

  10. Clinical And Morphological Androgenic Status Characteristics At Children Suffering From Hypospadias And Its Influence On Results Of Surgical Correction

    Directory of Open Access Journals (Sweden)

    F.K. Napolnikov

    2009-09-01

    Full Text Available The goal of this article is to estimate the androgenic status and analyze its influence on the surgical treatment of hypospadias. From 2000 till 2008 there were 209 children under treatment, whose age varied from 8 months till 15 years old (average age — 4,5+ 1,5. 49 patients were subjected to clinical, humoral and morphological study. Preoperational preparation was carried out by testosterone medications. The comparison group consisted of 10 boys with cicatricial phimosis. The patients with the medium and back forms of hypospadias suffered from the androgenic deficit characterized by proximal level of meatus ectopia, diminution of penis length and prostate volume, decrease of blood vessels in deep layers of penis skin. The testosterone pre-operational medication of patients makes possible to improve the results of surgical correction due to blood supply of plastic material. On the basis of recieved data logistically regressive model has been worked out and the prognosis of results has been estimated

  11. THE SELECTED ASPECTS OF SOCIOLOGICAL AND DEMOGRAPHIC CHARACTERISTIC OF PNEUMOCONIOSIS PATIENTS. INTRODUCTORY RESULTS OF A SOCIOLOGICAL SURVEY

    Directory of Open Access Journals (Sweden)

    Karina Erenkfeit

    2010-03-01

    Full Text Available Introduction: The aim of the study is a sociological description of people suffering from a pneumoconiosis. A sociological pilot survey performed on a group of patients with confirmed pneumoconiosis was conducted. Material and methods: The study was carried out by means of questionnaire in 133 patients. Following features were taken into consideration: age, sex, educational background, profession, type of activity, personal assessment of legislative acts, changes of professional ability after having been diagnosed as having pneumoconiosis, attitude towards offered aid to patients and preferred methods of support. Results: The population of people suffering from pneumoconiosis consists of mainly middle-aged and elderly men (98%. Most of them are pensioners (93%. Diagnosis of pneumoconiosis usually involves the patients going into retirement or a disability pension. The patients complain that they cannot count on government’s support. Rehabilitation and financial help are the major expected forms of support. Conclusions: People suffering from pneumoconiosis should be provided with rehabilitation and legal advices according to the advanced age and health condition. The results of research showed a lack of help in mentioned above issues, which should be a clue recommendation for institutions in charge of helping people suffering from occupational disease.

  12. Citrate content of bone for time since death estimation: results from burials with different physical characteristics and known PMI.

    Science.gov (United States)

    Kanz, Fabian; Reiter, Christian; Risser, Daniele U

    2014-05-01

    A recently introduced method to determine the postmortem interval (PMI) based on quantification of the citrate content in bone was applied on the temporal bones and femora of 20 individuals buried in wooden coffins (WO) and body bags (BB), respectively. Concerning known vs. calculated PMI, a significant difference between the temporal and the femur bone samples of the same individuals was observed in the BB group (p = 0.012). In contrast, differences were insignificant for the WO group (p = 0.400). Moreover, similar levels of underestimation of PMIs resulted from the analysis of the femora for both burial groups (p = 0.247). Also, there was consistently less citrate preserved in the flat temporal bones as compared to the femora, indicating that the cortical layer of the long bones should be preferentially employed for citrate-based PMI estimations. The results call for additional research on subsurface-buried and surface-deposited remains to enhance the accuracy of the published PMI equation.

  13. Experimental study of nonlinear switching characteristics of conventional 2 × 2 fused tapered couplers

    Institute of Scientific and Technical Information of China (English)

    Feng Liu; Qing Ye; Aiping Luo; Jianrong Qiu; Congshan Zhu; Ronghui Qu; Zujie Fang

    2005-01-01

    The nonlinear switching characteristics of fused fiber directional couplers were studied experimentally. By using femtosecond laser pulses with pulse width of 100 fs and wavelength of about 1550 nm from a system of Ti:sapphire laser and optical parametric amplifier (OPA), the nonlinear switching properties of a null coupler and a 100% coupler were measured. The experimental results were coincident with the simulations based on nonlinear propagation equations in fiber by using super-mode theory. Nonlinear loss in fiber was also measured to get the injected power at the coupler. After deducting the nonlinear loss and input efficiency, the nonlinear switching critical peak powers for a 100% and a null fused couplers were calculated to be 9410 and 9440 W, respectively. The nonlinear loss parameter PN in an expression of αNL = αP/PN was obtained to be PN = 0.23 W.

  14. Results of motor abilities and anthropometric and functional characteristics of physical preparedness of students-powerlifters with musculoskeletal diseases with different experience of taking exercises

    Directory of Open Access Journals (Sweden)

    Vitaly Lobko

    2015-04-01

    Full Text Available Our investigation dedicates to the problem of improving students’ health. Particularly, it refers to find out the ways of increasing students-powerlifters’ health with musculoskeletal diseases based on powerlifting. Purpose: to study the influence of long – term powerlifting exercises on anthropometric and functional characteristics and motor abilities of students- powerlifters with musculoskeletal diseases. Material and Methods: methods of investigation: theory analysis, synthesis and generalization, testing and math’s statistics and pedagogical experiment. There are 73 students with musculoskeletal diseases with different experience of taking exercises, 21 – had 1 year experience, 18 – 2 years, 12 – 3 years, 11 – 4 years and 11 – 5 years. Results: there are the differences of anthropometric and functional characteristics and the results of developing students’ motor abilities with different experience of taking exercises. Conclusion: the investigation revealed that increasing of the students’ sportsmanship shows the great growth almost all the investigated results.

  15. Determination of AC Characteristics of Superconducting Dipole Magnets in the Large Hadron Collider Based on Experimental Results and Simulations

    CERN Document Server

    Ambjørndalen, Sara; Verweij, Arjan

    The Large Hadron Collider (LHC) utilizes high-field superconducting Main Dipole Magnets that bend the trajectory of the beam. The LHC ring is electrically divided into eight octants, each allocating a 7 km chain of 154 Main Dipole Magnets. Dedicated de- tection and protection systems prevent irreversible magnet damage caused by quenches. Quench is a local transition from the superconducting to the normal conducting state. Triggering of such systems, along with other failure scenarios, result in fast transient phenomena. In order to analyze the consequence of such electrical transients and failures in the dipole chain, one needs a circuit model that is validated against measurements. Currently, there exists an equivalent circuit of the Main Dipole Magnet resolved at an aperture level. Each aperture model takes into account the dynamic effects occurring in the magnets, trough a lossy-inductance model and parasitic capacitances to ground. At low frequencies the Main Dipole Magnet behaves as a linear inductor. Ca...

  16. Characteristics of the Built Environment and the Presence of the Norway Rat in New York City: Results From a Neighborhood Rat Surveillance Program, 2008-2010.

    Science.gov (United States)

    Johnson, Sarah; Bragdon, Caroline; Olson, Carolyn; Merlino, Mario; Bonaparte, Sancia

    2016-06-01

    Characteristics of an urban setting such as New York City (NYC), including readily available putrescible waste and ample underground infrastructure, make it highly attractive to the Norway rat (Rattus norvegicus). To identify property and neighborhood characteristics associated with rat presence, recent inspectional results were analyzed from over 77,000 properties in the Bronx and Manhattan. Variables capturing the location and density of factors believed to promote rat populations were tested individually and in combination in models predicting rat activity. We found that property-specific characteristics typically associated with high garbage volume, including large numbers of residential units, public ownership, and open-space designation (parks, outdoor recreation, or vacant land) were the most important factors in explaining increased rat presence across neighborhoods in NYC. Interventions that involved improved garbage management and street sanitation within a designated area reduced the likelihood of finding rats, especially in medium- and high-poverty neighborhoods. Neighborhood characteristics, such as being near a railroad or subway line, having a school nearby, the presence of numerous restaurants, or having older infrastructure, also contributed to the increased likelihood of rats. Our results support the use of built environment data to target community-level interventions and capture emerging rat infestations.

  17. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  18. Partial Results Regarding Exploitation Characteristics, Morpho-Productive Traits for Saanen Breed Goats in South of the Country

    Directory of Open Access Journals (Sweden)

    Iulian Vlad

    2012-10-01

    Full Text Available Over about 92% from national goat livestock come from local unameliorated breeds, namely Carpathian breed whichis traditionally exploited in a mixed way next to sheep in a proportion of over 65% from the breed total.Expectations towards a qualitative and quantitative production led to pretty important imports for specialized breedslike the Saanen one, from communitary states, during the last 10 years.This study presents the results of someresearch started since the last semestre of the previous year on some goat livestock from Saanen breed, livestockwhich was brought to the Garbovi farm, Ialomita county. The livestock presents the following morpho-productivetraits, such as: weight 57.375±0.23 Kg as an average, back length 67.47±0,38cm, crupper length 69.25±0,41 cm,oblique body length 70,98±0,38 cm, thoracical perimeter 89.17cm±0.32 cm, resulting a dolicomorphe body structure.The medium milk production in is of 2.19 l/head/day during the stalling months November-February, with average ofNovember 58.05±1.77 l.,December 70.47±2,07 l.,January 92.30±2.93 l., and February 45.10±1.38 l.,only during thefirst 120 days, and the chemical composition of the main constituent parts: Dry matter nonfat 9.3%, protein 3.53%,fat 4.02%, a significant quantitative and qualitative gain of goat milk especially when the local breeds don’t yieldthem.The females prolificity is of 128%, being a lot below the breed average 150-170% in comparison with theaverage proven by the breed but also in comparison with the unameliorated breeds, this aspect being also a basicalelement in selection, next to the milk quantitative aspect. The gain recorded for goat youth over the 90 days iscomprised between 127g, 198g, 122g/day of males and 109g, 173g, 106 g/day of females, during the whole periodwhich was much over the average of Carpathian breed. Shortage of some agricultural policies on breed, of trainedstaff in the farm,speciality information concerning the exploitation of

  19. Characteristics of Atmospheric Heat Sources over Asia in Summer:Comparison of Results Calculated Using Multiple Reanalysis Datasets

    Institute of Scientific and Technical Information of China (English)

    ZHANG Bo; CHEN Longxun; HE Jinhai; ZHU Congwen; LI Wei

    2009-01-01

    Using 1979-2000 daily NCEP/NCAR (National Centers for Environmental Prediction/National Center for Atmospheric Research) reanalysis data (version 1, hereafter referred to as NCEP1; version 2, hereafter referred to as NCEP2), ECMWF (European Center for Medium-range Weather Forecasts) reanalysis data (ERA), and the Global Asian Monsoon Experiment (GAME) reanalysis data in summer 1998, the vertically integrated heat source (Q1) in summer is calculated, and results obtained using different datasets are com-pared. The distributions of (Q1) calculated by using NCEP1 are in good agreement with rainfall observations over the Arabian Sea/Indian Peninsula, the Bay of Bengal (BOB), and East China. The distributions of (Q1)revealed by using NCEP2 are unrealistic in the southern Indian Peninsula, the BOB, and the South China Sea. Using ERA, the heat sources over the tropical Asia are in accordance with the summer precipitation,however, the distributions of (Q1) in East China are unreasonable. In the tropical region, the distributions of the summer heat source given by NCEP1 and ERA seem to be more accurate than those revealed by NCEP2. The NCEP1 and NCEP2 data are better for calculating heat sources over the subtropical and eastern regions of mainland China.

  20. Mesospheric gravity waves observed near equatorial and low–middle latitude stations: wave characteristics and reverse ray tracing results

    Directory of Open Access Journals (Sweden)

    E. Achmad

    2006-12-01

    Full Text Available Gravity wave signatures were extracted from OH airglow observations using all-sky CCD imagers at four different stations: Cachoeira Paulista (CP (22.7° S, 45° W and São João do Cariri (7.4° S, 36.5° W, Brazil; Tanjungsari (TJS (6.9° S, 107.9° E, Indonesia and Shigaraki (34.9° N, 136° E, Japan. The gravity wave parameters are used as an input in a reverse ray tracing model to study the gravity wave vertical propagation trajectory and to estimate the wave source region. Gravity waves observed near the equator showed a shorter period and a larger phase velocity than those waves observed at low-middle latitudes. The waves ray traced down into the troposphere showed the largest horizontal wavelength and phase speed. The ray tracing results also showed that at CP, Cariri and Shigaraki the majority of the ray paths stopped in the mesosphere due to the condition of m2m2m|→∞, which suggests the presence of ducting waves and/or waves generated in-situ. In the troposphere, the possible gravity wave sources are related to meteorological front activities and cloud convections at CP, while at Cariri and TJS tropical cloud convections near the equator are the most probable gravity wave sources. The tropospheric jet stream and the orography are thought to be the major responsible sources for the waves observed at Shigaraki.

  1. Clinicopathologic characteristics and prognostic factors of ovarian fibrosarcoma: the results of a multi-center retrospective study

    Directory of Open Access Journals (Sweden)

    Liao Ling-Min

    2010-10-01

    Full Text Available Abstract Background Ovarian fibrosarcomas are very rare tumors, and therefore, few case studies have evaluated the prognostic factors of this disease. To our knowledge, this study represents the largest study to evaluate the clinical and pathologic factors associated with ovarian fibrosarcoma patients. Methods Thirty-one cases of ovarian fibrosarcoma were retrospectively reviewed, which included medical records for eight patients, and 23 published case reports from 1995 through 2009. Patient treatment regimens included total hysterectomy with bilateral adnexectomy and an omentectomy (BAO (n = 9, oophorectomy (OR (n = 8, chemotherapy (CT (n = 1, BAO followed by chemotherapy (BAO+CT (n = 11, BAO followed by radiotherapy (BAO+RT (n = 1, and oophorectomy followed by radiotherapy (OR + RT (n = 1. Results The patients of this cohort were staged according to the guidelines of the Federation of Gynecology and Obstetrics (FIGO, with 15, 6, 9, and 1 stage I-IV cases identified, respectively. Mitotic count values were also evaluated from 10 high-power fields (HPFs, and 3 cases had an average mitotic count P = 0.007 and treatment (P = 0.008 were predictive of poor prognosis. Furthermore, patients with stage I tumors that received BAO+CT were associated with a better prognosis. Conclusions Mitotic activity, and cells positive for Ki-67 were identified as important factors in the diagnosis of ovarian fibrosarcoma. Furthermore, FIGO stage and treatment modalities have the potential to be prognostic factors of survival, with BAO followed by adjuvant chemotherapy associated with an improved treatment outcome.

  2. Possible Changes in the Characteristics of the Rainy Season over Northern South America: Results from a Regional Climate Simulation

    Science.gov (United States)

    Vasconcelos, Francisco; Costa, Alexandre; Gandu, Adilson; Sales, Domingo; Araújo, Luiz

    2013-04-01

    Regional Climate Simulations were performed with RAMS6.0 to evaluate possible changes in the behaviour of the rainy season over the Amazon region, within the CORDEX domain of the Inter-tropical Americas. We forced the regional model using data from one of the CMIP5 participants (HadGEM2-ES), both for the Historical Experiment (1980-2005) and along the XXI century under RCP 8.5 (heavy-emission scenario). Regarding projections, we analyzed results for three time slices, short (2014-2035), middle (2044-2065) and long term (2078-2099), according to the following steps. First, the spatially averaged precipitation in non-overlapping pentads over 7 sub-regions over northern South America was calculated ("boxes" 1 to 7). Then, we calculated the climatological annual cycle for each one of them. Finally, dates of the onset and demise of the rainy season are found, validating the model results against GPCP observations and checking for projected changes. In general, in the Historical Experiment, the model delays the onset of the rainy season over the northern areas and anticipates it over most inland sub-regions. Over eastern Amazon, the regional model represents it properly, besides a delay in the demise of about one month. In short-term projections, there is a slight increase in precipitation and a modest anticipation of the rainy season onset in the coastal areas. Projected changes in the annual cycle of most sub-regions are relatively modest for the short-term and mid-term periods, but may become very significant by the end of the century. Over Colombia (Box 1), which has a bimodal precipitation annual cycle, the model projects a late century increase in the first precipitation peak. Little change is projected for the two boxes roughly covering Venezuela, the Guianas and the northernmost portion of northern Brazilian states (Boxes 2 and 3). The box covering northern Peru and Ecuador (Box 4) shows increased March-April precipitation, but with no significant changes in the

  3. CHARACTERISTICS OF TREATMENT OF PATIENTS WITH ACUTE AND CHRONIC LARYNGITIS DEPENDING ON RESULTS OF BACTERIOLOGICAL EXAMINATION OF LARYNX MICROFLORA

    Directory of Open Access Journals (Sweden)

    K. I. Chuikova

    2014-01-01

    Full Text Available This paper describes study of larynx microflora in patients with acute laryngtis and exacerbations of chronic laryngitis. Therapeutic algorithm based on bacteriologic examination data was developed reduce. New algorithm helps reduce sickness terms and to decrease prevalence of desease.123 patients of age from 18 to 60 were under observation: 43 patients with acute laryngitis and 80 patients with exacerbation of chronic laryngitis. 22 patients with acute laryngitis and 58 patients with exacerbation of chronic laryngitis underwent etiotropic treatment with antibiotics. The group of comparison with acute laryngitis (21 patients and chronic laryngitis (22 patients received treatment according to the conventional scheme.Bacteriologic examination of larynx mucous, clinical study and functional voice test (time of maximum vowels phonation before and after treatment were carried out.As a result of the research it was established that the most common causative agent of acute and chronic inflammatory larynx diseases is S. aureus as a mono culture or combined with other bacterial associations (S. аnhemolyticus, Str. viridans etc..After the end of antibacterial therapy we found symptoms as hoarseness, irritation, dry laryngopharynx, hyperemia and swelling of larynx mucous reduced eather in new treatment group than controlled group. Time of maximum vowels phonation (in seconds also increased significantly.Sickness terms after prescription of new treatment was shorter than in comparison groups: (10.9 ± 7.9 days for acute laryngitis and (12.6 ± 7.3 days for chronic laryngitis respectively. Health index was 20.8 and 19.5% respectively.

  4. Characteristics of the Earth's Magnetic Field Prior to the Cretaceous Normal Superchron: New Paleomagnetic Results from Alto Paraguay Formation

    Science.gov (United States)

    Cervantes Solano, M.; Goguitchaichrili, A.

    2011-12-01

    We report a detailed paleomagnetic investigation from 28 lava flows (221 standard paleomagnetic cores) collected in the Paraguayan part of the Paraná Flood Basalts (Alto Paraguay Formation) in order to (i) document the variability of the Earth's magnetic field during the early Cretaceous, (ii) estimate the extrusion rate of Paraná magma and (iii) obtain a new Cretaceous paleomagnetic pole for stable South America. The paleofield direction is precisely determined for 26 sites for which, the remanent magnetization is characterized by a small within-site dispersion and a high directional stability. Nine sites give normal polarity magnetization and other 9 are reversely magnetized while 8 remaining sites show intermediate paleodirections. The mean paleomagnetic direction of normal polarity sites is I=-41.8, D=4.9, k=112, a95=4.9 while reversely magnetized sites give I=37.1, D=181.4, k=23, a95=11.1. These results point to almost antipodal mean directions, since the reversal test is positive. The mean paleomagnetic pole position obtained from 18 sites is Plong= 179.2E, Plat= 86.2S, R=17.74, k=64.56, A95=4.3. The positions of Virtual Geomagnetic Poles show a reasonably good fit with a Fisherian distribution when probability plots as well as formal testing procedures are used. The pole obtained in this study agrees reasonably well with coeval pole positions, in particular with those obtained from CPMP (Central Paraná), Los Adobes, Misiones and SAMC. However, some other similar age paleomagnetic poles show significant departure that may be attributed to local tectonic rotations or insufficient sampling to overcome the paleosecular variation. The paleosecular variation parameters are in agreement with the selected data reported for the Cretaceous Normal Superchron. In contrast, VGP angular dispersions found here are lower with respect to the Jurassic and Plio-Pleistocene data. The intermediate VGPs show a cluster in southern hemisphere of 6 VGPs located near the pacific

  5. Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

    Science.gov (United States)

    Ali, M.; Svensk, O.; Riuttanen, L.; Kruse, M.; Suihkonen, S.; Romanov, A. E.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2012-08-01

    We present near-UV GaN light-emitting diodes (LEDs) grown on patterned GaN/sapphire templates with improved material quality and light extraction efficiency. Enhancement of light extraction efficiency is attributed to voids generated at the GaN/sapphire interface. The sidewall inclination angle of the voids can be controlled from nearly vertical (˜ 85°) to fully inclined (˜ 60°) by changing the initial patterning dimensions. Light extraction efficiency and material quality improve with a decreasing void sidewall angle. A 20% increase in the light output is observed at 20 mA of input current for LED structures with ˜60° inclined sidewall voids.

  6. Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

    Science.gov (United States)

    Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

    2016-11-01

    Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

  7. High Q-factor Sapphire Whispering Gallery Mode Microwave Resonator at Single Photon Energies and milli-Kelvin Temperatures

    CERN Document Server

    Creedon, Daniel L; Farr, Warrick; Martinis, John M; Duty, Timothy L; Tobar, Michael E

    2011-01-01

    The microwave properties of a crystalline sapphire dielectric whispering gallery mode resonator have been measured at very low excitation strength (E/hf=1) and low temperatures (T = 30 mK). The measurements were sensitive enough to observe saturation due to a highly detuned electron spin resonance, which limited the loss tangent of the material to about 2e-8 measured at 13.868 and 13.259 GHz. Small power dependent frequency shifts were also measured which correspond to an added magnetic susceptibility of order 1e-9. This work shows that quantum limited microwave resonators with Q-factors > 1e8 are possible with the implementation of a sapphire whispering gallery mode system.

  8. High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

    Science.gov (United States)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced

  9. TER-XSW investigation of CoPt{sub 3} nanoparticle films on Si and sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zargham, Ardalan; Schmidt, Thomas; Hildebrand, Radowan; Falta, Jens [Institute of Solid State Physics, University of Bremen (Germany); Gehl, Bernhard; Baeumer, Marcus [Institute of Physical Chemistry, University of Bremen (Germany)

    2008-07-01

    CoPt{sub 3} bimetallic colloidal nanoparticle films on Si and sapphire substrates are investigated concerning the real space distribution of Co and Pt in specifically defined layers above the substrates as well as the structural dependancy on plasma treatments. TER-XSW is considered to be a suitable method for these types of investigation because of its ability of material specification in vertical resolution. It is simultaneously possible to understand the surface morphology by means of XRR.

  10. Self-starting mode-locked picosecond Ti:sapphire laser by using of a fast SESAM

    Institute of Scientific and Technical Information of China (English)

    Zhu Jiang-Feng; Tian Jin-Rong; Wang Peng; Ling Wei-Jun; Li De-Hua; Wei Zhi-Yi

    2006-01-01

    A stable continuous wave mode-locked picosecond Ti:sapphire laser by using a fast semiconductor saturable absorber mirror (SESAM) is demonstrated. The laser delivers pulse width of 20 ps at a central wavelength of 813 nm and a repetition rate of 100 MHz. The maximum output power is 1.34 W with pump power of 7 W which corresponds to an optical-optical conversion efficiency of 19.1%.

  11. High energy femtosecond mid-infrared generation pumped by a two-color Ti:sapphire multipass amplifier

    Institute of Scientific and Technical Information of China (English)

    XIA JiangFan; SONG Jie; Donna T. Strickland

    2008-01-01

    Intense mid-infrared was generated by direct frequency mixing two pulses from a dual-wavelength Ti:sapphire system. From a multipass amplifier we generated two tunable wavelength femtosecond pulses with a total energy of 15 mJ. Pulse energy of 1.6 μJ and 7.4 μJ of mid-infrared light is achieved with and without its multipass amplifier at 9-11 μm, with pulse duration of 500 fs.

  12. Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

    2014-09-30

    This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

  13. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  14. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  15. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-11-01

    This report summarizes technical progress over the second six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on evaluating corrosion effects in single crystal sapphire at temperatures up to 1400 C, and designing the sensor mechanical packaging with input from Wabash River Power Plant. Upcoming meetings will establish details for the gasifier field test.

  16. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Science.gov (United States)

    Park, Junsu; Sin, Young-Gwan; Kim, Jae-Hyun; Kim, Jaegu

    2016-10-01

    Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  17. The sub-micron hole array in sapphire produced by inductively-coupled plasma reactive ion etching.

    Science.gov (United States)

    Shiao, Ming-Hua; Chang, Chun-Ming; Huang, Su-Wei; Lee, Chao-Te; Wu, Tzung-Chen; Hsueh, Wen-Jeng; Ma, Kung-Jeng; Chiang, Donyau

    2012-02-01

    The sub-micron hole array in a sapphire substrate was fabricated by using nanosphere lithography (NSL) combined with inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. Polystyrene nanospheres of about 600 nm diameter were self-assembled on c-plane sapphire substrates by the spin-coating method. The diameter of polystyrene nanosphere was modified by using oxygen plasma in ICP-RIE system. The size of nanosphere modified by oxygen plasma was varied from 550 to 450 nm with different etching times from 15 to 35 s. The chromium thin film of 100 nm thick was then deposited on the shrunk nanospheres on the substrate by electron-beam evaporation system. The honeycomb type chromium mask can be obtained on the sapphire substrate after the polystyrene nanospheres were removed. The substrate was further etched in two sets of chlorine/Argon and boron trichloride/Argon mixture gases at constant pressure of 50 mTorr in ICP-RIE processes. The 400 nm hole array in diameter can be successfully produced under suitable boron trichloride/Argon gas flow ratio.

  18. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  19. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  20. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)