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Sample records for sapphire characteristics resulted

  1. Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

    Science.gov (United States)

    Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

    2018-02-01

    (11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

  2. Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

    1991-06-29

    Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

  3. Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

    Directory of Open Access Journals (Sweden)

    Sheng-Fu Yu

    2012-01-01

    Full Text Available The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs grown on patterned sapphire substrates (PSSs with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%, 1.1 (57%, 1.5 (81%, and 1.9 (91% μm at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

  4. Nonlinearity Mechanism and Correction of Sapphire Fiber Temperature Sensor on Blackbody Cavity

    Directory of Open Access Journals (Sweden)

    Tiejun Cao

    2014-06-01

    Full Text Available Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stability of the sensor. In order to solve the nonlinear problems which exist in the measurement, at first, the sapphire fiber optic temperature sensor temperature measurement principle and nonlinear generation mechanism are studied; secondly piecewise linear interpolation and spline interpolation linearization algorithm is designed with combining the nonlinear characteristics of sapphire optical fiber temperature sensor, and the program is designed on its linear and associated signal processing. Experimental results show that a good linearization of sapphire fiber optic temperature sensor can been achieved in this method.

  5. Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Feng, Z.C.; Liu, W.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Yang, T.R.; Zhao, J.

    2006-01-01

    The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully

  6. High performance sapphire windows

    Science.gov (United States)

    Bates, Stephen C.; Liou, Larry

    1993-02-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  7. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  8. Appearance of large crystalline domains in VO{sub 2} films grown on sapphire (001) and their phase transition characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Azhan, Nurul Hanis; Su, Kui; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont 37200 Tours (France)

    2015-06-28

    We report the first observation of large crystalline domains of several μm-size in VO{sub 2} films deposited on Al{sub 2}O{sub 3} (001) substrates by rf-biased reactive sputtering technique. The large crystalline domains, dominated with random in-plane oriented growth of (011){sub M1}-orientation, appear only under adequate substrate biasing, such as 10 W, while most biasing conditions result in conventional nanosized grains of highly oriented (010){sub M1}-orientation. Two temperature-controlled analyses, x-ray diffraction and micro-Raman spectroscopy, have revealed that some parts of large crystalline domains undergo intermediate monoclinic (M2) phase during the thermally-induced structural phase transition from monoclinic (M1) to rutile-tetragonal (R) phase. As an effect of the appearance of large crystalline domains, the film showed in-plane tensile stress, resulting in high T{sub IMT} of 69 °C due to the elongation of the V-V distance in its low-temperature monoclinic phase.

  9. Reduced cost and improved figure of sapphire optical components

    Science.gov (United States)

    Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

    2015-10-01

    Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

  10. Sapphire: A kinking nonlinear elastic solid

    Science.gov (United States)

    Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

    2006-03-01

    Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

  11. Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

    Science.gov (United States)

    Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

    2013-12-02

    We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

  12. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  13. Oleophobic properties of the step-and-terrace sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.

  14. Microscopic origin of the optical processes in blue sapphire.

    Science.gov (United States)

    Bristow, Jessica K; Parker, Stephen C; Catlow, C Richard A; Woodley, Scott M; Walsh, Aron

    2013-06-11

    Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

  15. Microscopic origin of the optical processes in blue sapphire

    OpenAIRE

    Bristow, JK; Parker, SC; Catlow, CRA; Woodley, SM; Walsh, A

    2013-01-01

    Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

  16. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  17. Ti:Sapphire waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

    2007-01-01

    Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

  18. Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

    2009-01-01

    In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

  19. 'Sapphire' project. Objectives and outcomes

    International Nuclear Information System (INIS)

    Shkolnik, V.S.

    1997-01-01

    'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

  20. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  1. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  2. Oxidation states of Fe and Ti in blue sapphire

    International Nuclear Information System (INIS)

    Wongrawang, P; Wongkokua, W; Monarumit, N; Thammajak, N; Wathanakul, P

    2016-01-01

    X-ray absorption near-edge spectroscopy (XANES) can be used to study the oxidation state of a dilute system such as transition metal defects in solid-state samples. In blue sapphire, Fe and Ti are defects that cause the blue color. Inter-valence charge transfer (IVCT) between Fe 2+ and Ti 4+ has been proposed to describe the optical color’s origin. However, the existence of divalent iron cations has not been thoroughly investigated. Fluorescent XANES is therefore employed to study K-edge absorptions of Fe and Ti cations in various blue sapphire samples including natural, synthetic, diffused and heat-treated sapphires. All the samples showed an Fe absorption edge at 7124 eV, corresponding to the Fe 3+ state; and Ti at 4984 eV, corresponding to Ti 4+ . From these results, we propose Fe 3+ -Ti 4+ mixed acceptor states located at 1.75 eV and 2.14 eV above the valence band of corundum, that correspond to 710 nm and 580 nm bands of UV–vis absorption spectra, to describe the cause of the color of blue sapphire. (paper)

  3. Characteristics of Tables for Disseminating Biobehavioral Results.

    Science.gov (United States)

    Schneider, Barbara St Pierre; Nagelhout, Ed; Feng, Du

    2018-01-01

    To report the complexity and richness of study variables within biological nursing research, authors often use tables; however, the ease with which consumers understand, synthesize, evaluate, and build upon findings depends partly upon table design. To assess and compare table characteristics within research and review articles published in Biological Research for Nursing and Nursing Research. A total of 10 elements in tables from 48 biobehavioral or biological research or review articles were analyzed. To test six hypotheses, a two-level hierarchical linear model was used for each of the continuous table elements, and a two-level hierarchical generalized linear model was used for each of the categorical table elements. Additionally, the inclusion of probability values in statistical tables was examined. The mean number of tables per article was 3. Tables in research articles were more likely to contain quantitative content, while tables in review articles were more likely to contain both quantitative and qualitative content. Tables in research articles had a greater number of rows, columns, and column-heading levels than tables in review articles. More than one half of statistical tables in research articles had a separate probability column or had probability values within the table, whereas approximately one fourth had probability notes. Authors and journal editorial staff may be generating tables that better depict biobehavioral content than those identified in specific style guidelines. However, authors and journal editorial staff may want to consider table design in terms of audience, including alternative visual displays.

  4. Surface study of irradiated sapphires from Phrae Province, Thailand using AFM

    Science.gov (United States)

    Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.

    2017-09-01

    The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.

  5. Sapphire capillary interstitial irradiators for laser medicine

    Science.gov (United States)

    Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

    2018-04-01

    In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

  6. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    facility in Terre Haute, Indiana. Due to business conditions at industrial partner and several logistical problems, this field test was not successful. An alternative high-temperature sensing system using sapphire wafer-based extrinsic Fabry-Perot interferometry was then developed as a significant improvement over the BPDI solution. From June 2006 to June 2008, three consecutive field tests were performed with the new sapphire wafer sensors at the TECO coal gasifier in Tampa, Florida. One of the sensors survived in the industrial coal gasifier for 7 months, over which time the existing thermocouples were replaced twice. The outcome of these TECO field tests suggests that the sapphire wafer sensor has very good potential to be commercialized. However packaging and sensor protection issues need additional development. During Phase III, several major improvements in the design and fabrication process of the sensor have been achieved through experiments and theoretical analysis. Studies on the property of the key components in the sensor head, including the sapphire fiber and sapphire wafer, were also conducted, for a better understanding of the sensor behavior. A final design based on all knowledge and experience has been developed, free of any issues encountered during the entire research. Sensors with this design performed well as expected in lab long-term tests, and were deployed in the sensing probe of the final coal-gasifier field test. Sensor packaging and protection was improved through materials engineering through testing of packaging designs in two blank probe packaging tests at Eastman Chemical in Kingsport, TN. Performance analysis of the blank probe packaging resulted in improve package designs culminating in a 3rd generation probe packaging utilized for the full field test of the sapphire optical sensor and materials designed sensor packaging.

  7. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    . However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

  8. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Interfacial thermal resistance between high-density polyethylene (HDPE) and sapphire

    International Nuclear Information System (INIS)

    Zheng Kun; Ma Yong-Mei; Wang Fo-Song; Zhu Jie; Tang Da-Wei

    2014-01-01

    To improve the thermal conductivity of polymeric composites, the numerous interfacial thermal resistance (ITR) inside is usually considered as a bottle neck, but the direct measurement of the ITR is hardly reported. In this paper, a sandwich structure which consists of transducer/high density polyethylene (HDPE)/sapphire is prepared to study the interface characteristics. Then, the ITRs between HDPE and sapphire of two samples with different HDPE thickness values are measured by time-domain thermoreflectance (TDTR) method and the results are ∼ 2 × 10 −7 m 2 ·K·W −1 . Furthermore, a model is used to evaluate the importance of ITR for the thermal conductivity of composites. The model's analysis indicates that reducing the ITR is an effective way of improving the thermal conductivity of composites. These results will provide valuable guidance for the design and manufacture of polymer-based thermally conductive materials. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

    International Nuclear Information System (INIS)

    Yi, Jong Hoon; Horn, Roland; Wendt, K.

    2001-01-01

    We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

  11. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  12. An injection modelocked Ti-sapphire laser for synchronous photoinjection

    International Nuclear Information System (INIS)

    Hovater, C.; Poelker, M.

    1997-01-01

    The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

  13. Characteristics of complaints resulting in disciplinary actions against Danish GPs

    DEFF Research Database (Denmark)

    S, Birkeland; RD, Christensen; N, Damsbo

    2013-01-01

    The risk of being disciplined in connection with a complaint case causes distress to most general practitioners. The present study examined the characteristics of complaint cases resulting in disciplinary action.......The risk of being disciplined in connection with a complaint case causes distress to most general practitioners. The present study examined the characteristics of complaint cases resulting in disciplinary action....

  14. High energy iron ion implantation into sapphire

    International Nuclear Information System (INIS)

    Allen, W.R.; Pedraza, D.F.

    1990-01-01

    Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

  15. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  16. Controllable laser thermal cleavage of sapphire wafers

    Science.gov (United States)

    Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

    2018-03-01

    Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

  17. Research Progress and Development of Sapphire Fiber Sensor

    Directory of Open Access Journals (Sweden)

    Guochang ZHAO

    2014-07-01

    Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

  18. Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States)

    2017-12-15

    The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

  19. Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

    Science.gov (United States)

    Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

    1982-05-01

    This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

  20. Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

    International Nuclear Information System (INIS)

    Zeng, Yong; Zhao, Yan; Jiang, Yijian

    2015-01-01

    Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

  1. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  2. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  3. Design of all solid state tunable single-mode Ti: sapphire laser for nuclear industry

    International Nuclear Information System (INIS)

    Lee, J.H.; Nam, S.M.; Lee, Y.J.; Lee, J.M.; Horn, Roland E.; Wendt, Klaus

    1999-01-01

    We designed a Ti:Sapphire laser pumped by a diode laser pumped solid state laser (DPSSL). The DPSSL was intra-cavity frequency doubled and it had 20 W output power. The Ti:Sapphire laser was designed for single longitudinal mode lasing. For single mode lasing, the laser used several solid etalons. We simulated temporal evolution of the laser pulse and single pass amplification rate of the photons in each modes from rate equations. From the result, we found that single mode lasing is viable in this cavity

  4. Site location and optical properties of Eu implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2005-01-01

    Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 x 10 16 cm -2 . Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 deg. C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 deg. C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements

  5. Characterization of sapphire: For its material properties at high temperatures

    Science.gov (United States)

    Bal, Harman Singh

    There are numerous needs for sensing, one of which is in pressure sensing for high temperature application such as combustion related process and embedded in aircraft wings for reusable space vehicles. Currently, silicon based MEMS technology is used for pressure sensing. However, due to material properties the sensors have a limited range of approximately 600 °C which is capable of being pushed towards 1000 °C with active cooling. This can introduce reliability issues when you add more parts and high flow rates to remove large amounts of heat. To overcome this challenge, sapphire is investigated for optical based pressure transducers at temperatures approaching 1400 °C. Due to its hardness and chemical inertness, traditional cutting and etching methods used in MEMS technology are not applicable. A method that is being investigated as a possible alternative is laser machining using a picosecond laser. In this research, we study the material property changes that occur from laser machining and quantify the changes with the experimental results obtained by testing sapphire at high-temperature with a standard 4-point bending set-up.

  6. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

  7. Characteristics of complaints resulting in disciplinary actions against Danish GPs.

    Science.gov (United States)

    Birkeland, Søren; Depont Christensen, Rene; Damsbo, Niels; Kragstrup, Jakob

    2013-09-01

    The risk of being disciplined in connection with a complaint case causes distress to most general practitioners. The present study examined the characteristics of complaint cases resulting in disciplinary action. The Danish Patients' Complaints Board's decisions concerning general practice in 2007 were examined. Information on the motives for complaining, as well as patient and general practitioner characteristics, was extracted and the association with case outcome (disciplinary or no disciplinary action) was analysed. Variables included complaint motives, patient gender and age, urgency of illness, cancer diagnosis, healthcare settings (daytime or out-of-hours services), and general practitioner gender and professional seniority. Cases where the complaint motives involved a wish for placement of responsibility (OR = 2.35, p = 0.01) or a wish for a review of the general practitioner's competence (OR = 1.95, p = 0.02) were associated with increased odds of the general practitioner being disciplined. The odds of discipline decreased when the complaint was motivated by a feeling of being devalued (OR = 0.39, p = 0.02) or a request for an explanation (OR = 0.46, p = 0.01). With regard to patient and general practitioner characteristics, higher general practitioner professional seniority was associated with increased odds of discipline (OR = 1.97 per 20 additional years of professional seniority, p = 0.01). None of the other characteristics was statistically significantly associated with discipline in the multiple logistic regression model. Complaint motives and professional seniority were associated with decision outcomes. Further research is needed on the impact of professional seniority on performance.

  8. Description of Project Sapphire. Revision 1

    International Nuclear Information System (INIS)

    Taylor, R.G.

    1995-01-01

    The mission of Project Sapphire was to repackage approximately 600 kg of highly enriched uranium (HEU) in the Republic of Kazakhstan into internationally acceptable shipping packages and transport the material to a storage location in the United States. There were four material types to be repackaged: metal; oxide; uranium/beryllium (U/Be) alloy; and residues from U/Be alloy production. Seven major steps described in this report were necessary for successful execution of the project: planning and training; readiness assessment; deployment; set up; process; take down; and transport. Nuclear criticality safety especially affected several of these steps

  9. Lattice dynamics of sapphire (corundum). Pt. 2

    International Nuclear Information System (INIS)

    Kappus, W.

    1975-01-01

    Theoretical models of the lattice dynamics of sapphire (α - Al 2 O 3 ), based on the assumption of rigid ions, have been fitted to measured phonons at the Gamma-point of the Brillouin zone. Short range interactions were taken into account by assuming 2-body interactions between touching ions. Additional 3-body interactions could not improve the fit significantly. Calculated dispersion curves are presented and compared with inelastic neutron scattering data. A good agreement for branches along the trigonal axis can be stated. (orig.) [de

  10. A Century of Sapphire Crystal Growth

    Science.gov (United States)

    2004-05-17

    should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

  11. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

    1976-01-01

    Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

  12. Synthesis of titanium sapphire by ion implantation

    International Nuclear Information System (INIS)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

    1998-01-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

  13. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  14. Test results and operational characteristics of prototype SSCL half cell

    International Nuclear Information System (INIS)

    McInturff, A.D.; Burgett, W.; Carter, H.

    1994-01-01

    The SSCL Accelerator System's String Test (ASST) has had several cool down, subsequent operational test series, and warm up cycles. The first cycle of these was rather limited in scope as mandated by Congress. The subsequent tests have been performed to obtain more complete information about parameters of, or operating experience with, the ensemble of magnets and spools when operating serially as in accelerator operations. The tests and procedures performed to date have emphasized cryogenic, mechanical, and electrical operations. These have included running, as well as upset conditions, i.e., superconducting to normal transition of the string (quench). This paper represents a summary of the operational test results and characteristics seen to date. A limited discussion will be included as to their implications with respect to a successful accelerator operation

  15. Thermal healing of the sub-surface damage layer in sapphire

    International Nuclear Information System (INIS)

    Pinkas, Malki; Lotem, Haim; Golan, Yuval; Einav, Yeheskel; Golan, Roxana; Chakotay, Elad; Haim, Avivit; Sinai, Ela; Vaknin, Moshe; Hershkovitz, Yasmin; Horowitz, Atara

    2010-01-01

    The sub-surface damage layer formed by mechanical polishing of sapphire is known to reduce the mechanical strength of the processed sapphire and to degrade the performance of sapphire based components. Thermal annealing is one of the methods to eliminate the sub-surface damage layer. This study focuses on the mechanism of thermal healing by studying its effect on surface topography of a- and c-plane surfaces, on the residual stresses in surface layers and on the thickness of the sub-surface damage layer. An atomically flat surface was developed on thermally annealed c-plane surfaces while a faceted roof-top topography was formed on a-plane surfaces. The annealing resulted in an improved crystallographic perfection close to the sample surface as was indicated by a noticeable decrease in X-ray rocking curve peak width. Etching experiments and surface roughness measurements using white light interferometry with sub-nanometer resolution on specimens annealed to different extents indicate that the sub-surface damage layer of the optically polished sapphire is less than 3 μm thick and it is totally healed after thermal treatment at 1450 deg. C for 72 h.

  16. Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

    International Nuclear Information System (INIS)

    Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

    2004-01-01

    Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

  17. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  18. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  19. Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

    Science.gov (United States)

    Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

    2018-01-01

    Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

  20. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  1. Sapphire/TiAl composites - structure and properties

    International Nuclear Information System (INIS)

    Povarova, K.B.; Antonova, A.V.; Mileiko, S.T.; Sarkissyan, N.S.

    2001-01-01

    Ti-Al-intermetallic-based alloys with lamellar microstructure, -γ(TiAl) +α 2 (Ti 3 Al) are characterized by a high melting point of 1460 o C, a low density of ∼3.9 g/cm 3 , a high gas corrosion resistance up to a temperature of about 900 o C, a high creep resistance up to a temperature of about 800 o C, and a sufficiently high fracture toughness at low temperatures, up to 30 Mpa x m 1/2 . Hence, they are considered as excellent matrices for fibres of high melting point. Unlike well-developed SiC/TiAl composites, which have an obvious upper limit for the usage temperature due to SiC/TiAl interaction, Sapphire/TiAl composites remain nearly unknown because fibres to be used in such composites have not been really available. At the present time, such fibres are developed in Solid State Physics Inst. of RAS. The results of preliminary creep tests of Al 2 O 3 /TiAl composites obtained by using pressure casting have shown that usage of such composite systems shifts the temperature limit for light structural materials in terms of creep resistance to, at least, 1050 o C: creep strength on 100 h time base reaches 120 MPa at that temperature. It occurs also that Sapphire-fibres/TiAl-matrix composite specimens have an increased gas corrosion resistance by more than one order of the magnitudes as compared with that of the matrix alloy. (author)

  2. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  3. Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

    Science.gov (United States)

    Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

    2018-01-08

    A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

  4. Influence of interfacial reactions on the fiber push-out behavior in sapphire fiber-reinforced-NiAl(Yb) composites

    International Nuclear Information System (INIS)

    Tewari, S.N.; Asthana, R.; Tiwari, R.; Bowman, R.R.

    1993-01-01

    The influence of microstructure of the fiber-matrix interface on the fiber push-out behavior has been examined in sapphire fiber-reinforced NiAl and NiAl(Yb) matrix composites synthesized using powder metallurgy techniques combined with zone directional solidification (DS). The push-out stress-displacement curves were observed to consist of an initial 'pseudoelastic' region, wherein the stress increased linearly with displacement, followed by an 'inelastic' region, where the slope of the stress-displacement plot decreased until a maximum stress was reached, and the subsequent stress drop to a constant 'frictional' stress. Chemical reaction between the fiber and the matrix resulted in higher interfacial shear strength in powder cloth processed sapphire-NiAl(Yb) composites as compared to the sapphire-NiAl composites. Grain boundaries in contact with the fibers on the back face of the push-out samples were the preferred sites for crack nucleation in PM composites. The frictional stress was independent of the microstructure and processing variables for NiAl composites, but showed strong dependence on these variables for the NiAl(Yb) composites. The DS processing enhanced the fiber-matrix interfacial shear strength of feedstock PM-NiAl/sapphire composites. However, it reduced the interfacial shear strength of PM-NiAl(Yb)-sapphire composites

  5. Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

    International Nuclear Information System (INIS)

    Makino, Hisao; Song, Huaping; Yamamoto, Tetsuya

    2014-01-01

    The Ga-doped ZnO (GZO) films deposited on glass and c-plane sapphire substrates have been comparatively studied in order to explore the role of grain boundaries in electrical properties. The influences of oxygen gas flow rates (OFRs) during the deposition by ion-plating were examined. The dependences of carrier concentration, lattice parameters, and characteristic of thermal desorption of Zn on the OFR showed common features between glass and sapphire substrates, however, the Hall mobility showed different behavior. The Hall mobility of GZO films on glass increased with increasing OFR of up to 15 sccm, and decreased with further increasing OFR. On the other hand, the Hall mobility of GZO films on c-sapphire increased for up to 25 sccm. The role of grain boundary in polycrystalline GZO films has been discussed. - Highlights: • Ga-doped ZnO films were deposited on glass and c-sapphire by ion-plating. • The epitaxial growth on c-sapphire was confirmed by X-ray diffraction. • Dependence of Hall mobility showed different tendency between glass and sapphire. • Grain boundaries influence transport properties at high O 2 gas flow rate

  6. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-01-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)

  7. Neutron Transmission of Single-crystal Sapphire Filters

    Science.gov (United States)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-05-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

  8. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2004-01-01

    A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons

  9. Phonemic Characteristics of Apraxia of Speech Resulting from Subcortical Hemorrhage

    Science.gov (United States)

    Peach, Richard K.; Tonkovich, John D.

    2004-01-01

    Reports describing subcortical apraxia of speech (AOS) have received little consideration in the development of recent speech processing models because the speech characteristics of patients with this diagnosis have not been described precisely. We describe a case of AOS with aphasia secondary to basal ganglia hemorrhage. Speech-language symptoms…

  10. Reliability improvement methods for sapphire fiber temperature sensors

    Science.gov (United States)

    Schietinger, C.; Adams, B.

    1991-08-01

    Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

  11. Use of contact Nd:YAG sapphire-laser system for performing partial hepatectomy and splenectomy in dogs

    Science.gov (United States)

    Yu, Chibing; Jing, Shujuan; Cai, Huimin; Shao, Lanxing; Zou, Hegui

    1993-03-01

    An Nd:YAG Sapphire laser blade was used for performing hepatectomy and splenectomy in dogs. The results suggest that a laser blade provides a new way to reduce intraoperative bleeding and to minimize tissue damage. In recent years, there have been some reports on performing surgical procedures using a contact Nd:YAG Sapphire laser system. The current animal study was conducted in order to explore the capability of incision and excision of the laser tip, the damage to the tissue, and the recovery course.

  12. Laser ablation of dental calculus at 400 nm using a Ti:sapphire laser

    Science.gov (United States)

    Schoenly, Joshua E.; Seka, Wolf; Rechmann, Peter

    2009-02-01

    A Nd:YAG laser-pumped, frequency-doubled Ti:sapphire laser is used for selective ablation of calculus. The laser provides calculus removal. This is in stark contrast with tightly focused Gaussian beams that are energetically inefficient and lead to irreproducible results. Calculus is well ablated at high fluences >=2J/cm2 stalling occurs below this fluence because of photobleaching. Healthy hard tissue is not removed at fluences <=3 J/cm2.

  13. Growth optimization for thick crack-free GaN layers on sapphire with HVPE

    Energy Technology Data Exchange (ETDEWEB)

    Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

    2005-05-01

    Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Electrical parameters of silicon on sapphire; influence on aluminium gate MOS devices performances

    International Nuclear Information System (INIS)

    Suat, J.P.; Borel, J.

    1976-01-01

    The question is the quality level of the substrate obtained with MOS technologies on silicon on an insulating substrate. Experimental results are presented on the main electrical parameters of MOS transistors made on silicon on sapphire, e.g. mean values and spreads of: threhold voltage and surface mobilities of transistors, breakdown voltages, and leakage currents of diodes. These devices have been made in three different technologies: enhancement P. channel technology, depletion-enhancement P. channel technology, and complementary MOS technology. These technologies are all aluminium gate processes with standard design rules and 5μm channel length. Measurements show that presently available silicon on sapphire can be considered as a very suitable substrate for many MOS digital applications (but not for dynamic circuits) [fr

  15. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  16. Facet Appearance on the Lateral Face of Sapphire Single-Crystal Fibers during LHPG Growth

    Directory of Open Access Journals (Sweden)

    Liudmila D. Iskhakova

    2016-08-01

    Full Text Available Results of the study of the lateral surface of single-crystal (SC sapphire fibers grown along crystallographic directions [ 0001 ] and [ 11 2 ¯ 0 ] by the LHPG method are presented. The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is investigated. The microstructure of the samples is investigated with the help of an optical microscope and a JSM-5910LV scanning electronic microscope (JEOL. The crystallographic orientations of the facets on the SC sapphire fiber surface are determined by electron backscatter diffraction (EBSD. The seed orientation is studied by means of XRD techniques.

  17. Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

    NARCIS (Netherlands)

    Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

    2004-01-01

    We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

  18. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  19. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    Science.gov (United States)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  20. Family Characteristics of Anxious ADHD Children: Preliminary Results

    Science.gov (United States)

    Kepley, Hayden O.; Ostrander, Rick

    2007-01-01

    Objective: To investigate the family environments of children in a community sample with ADHD and co-occurring anxiety. Method: Family Environment Scale, Behavioral Assessment System for Children, and Structured Clinical Interview are administered to parents of children with ADHD with and without anxiety. Results: ADHD families are uniformly less…

  1. Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

    Science.gov (United States)

    Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

    2017-06-01

    Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

  2. Solar energy characteristics and some photovoltaic testing results in Jeddah

    Energy Technology Data Exchange (ETDEWEB)

    Mosalam Shaltout, M A

    1986-01-01

    The data for global radiation were analysed to investigate the correlation with climatological factors. Solar cell module testing under Jeddah climatic conditions was initiated in 1984-1985. The goal of this work was to study the performance and reliability of a commercially-available module in outdoor conditions in order to obtain information on solar cell system design, and to observe the influence of our specific climate conditions on module energy output. The use of results obtained for precise system sizing is discussed.

  3. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  4. Spatial chirp in Ti:sapphire multipass amplifier

    International Nuclear Information System (INIS)

    Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

    2017-01-01

    The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

  5. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  6. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  7. Molecular dynamics simulation of electron trapping in the sapphire lattice

    International Nuclear Information System (INIS)

    Rambaut, C.; Oh, K.H.; Fayeulle, S.; Kohanoff, J.

    1995-10-01

    Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge mode. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (α -Al 2 O 3 ) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5 A. Detrapping is observed at 250 K. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature. (author). 18 refs, 7 figs, 2 tabs

  8. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  9. Sapphire-fiber-based distributed high-temperature sensing system.

    Science.gov (United States)

    Liu, Bo; Yu, Zhihao; Hill, Cary; Cheng, Yujie; Homa, Daniel; Pickrell, Gary; Wang, Anbo

    2016-09-15

    We present, for the first time to our knowledge, a sapphire-fiber-based distributed high-temperature sensing system based on a Raman distributed sensing technique. High peak power laser pulses at 532 nm were coupled into the sapphire fiber to generate the Raman signal. The returned Raman Stokes and anti-Stokes signals were measured in the time domain to determine the temperature distribution along the fiber. The sensor was demonstrated from room temperature up to 1200°C in which the average standard deviation is about 3.7°C and a spatial resolution of about 14 cm was achieved.

  10. SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

    Energy Technology Data Exchange (ETDEWEB)

    Shimoji, Yutaka

    2010-08-09

    Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

  11. Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-08-01

    With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

  12. Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

    International Nuclear Information System (INIS)

    Lee, Y.J.; Hsu, T.C.; Kuo, H.C.; Wang, S.C.; Yang, Y.L.; Yen, S.N.; Chu, Y.T.; Shen, Y.J.; Hsieh, M.H.; Jou, M.J.; Lee, B.J.

    2005-01-01

    InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis

  13. Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

    Science.gov (United States)

    Chen, Hao; Zhang, Qi; Chou, Stephen Y

    2015-02-27

    Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

  14. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  15. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

    Science.gov (United States)

    Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-08-01

    Group 3 (sapphire ceramic brackets) i.e., Group 2 showed the highest light absorption and the least translucency followed by groups 1 and 3. Shear bond strength results were 2.4 mpa, 1.9 mpa and 3.6 mpa for groups 1,2 and 3 respectively. Superior shear bond strength was recorded in group 3 (sapphire ceramic brackets). ARI results showed that group 3 had increased bond between bracket adhesive interfaces when compared to the other 2 groups. From this study, it has been concluded that sapphire ceramic brackets (Group 3) was superior in translucency and shear bond strength followed by monocrystalline and polycrystalline ceramic brackets.

  16. AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

    2014-09-01

    Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

  17. Antireflection coatings for intraocular lenses of sapphire and fianite

    Energy Technology Data Exchange (ETDEWEB)

    Babin, A.A.; Konoplev, Yu.N.; Mamaev, Yu.A. [Inst. of Applied Physics, Nizhnii Novgorod (Russian Federation)] [and others

    1995-10-01

    Broadband antireflection coatings for intraocular lenses of sapphire and fianite are calculated and implemented practically. Their residual reflectance in the liquid with a refracting index of 1.336 is below 0.2% from each face virtually over the entire visible region. 7 refs., 2 figs., 2 tabs.

  18. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  19. Scintillation of sapphire under particle excitation at low temperature

    International Nuclear Information System (INIS)

    Amare, J; Beltran, B; Cebrian, S; Coron, N; Dambier, G; GarcIa, E; Gomez, H; Irastorza, I G; Leblanc, J; Luzon, G; Marcillac, P de; Martinez, M; Morales, J; Ortiz de Solorzano, A; Pobes, C; Puimedon, J; Redon, T; RodrIguez, A; Ruz, J; Sarsa, M L; Torres, L; Villar, J A

    2006-01-01

    The scintillation properties of undoped sapphire at very low temperature have been studied in the framework of the ROSEBUD (Rare Objects SEarch with Bolometers UnDerground) Collaboration devoted to dark matter searches. We present an estimation of its light yield under gamma, alpha and neutron excitation

  20. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison

  1. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    International Nuclear Information System (INIS)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-01-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices. (paper)

  2. Optimizing Ti:Sapphire laser for quantitative biomedical imaging

    Science.gov (United States)

    James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

    2018-02-01

    Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

  3. Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio, E-mail: ogino-toshio-rx@ynu.ac.jp

    2017-02-28

    Highlights: • Local hydrophobicity of phase-separated sapphire (0001) surfaces was investigated. • These surfaces are featured by coexistence of hydrophilic and hydrophobic domains. • Each domain was characterized by colloidal probe atomic force microscopy in water. • Both domains can be distinguished by adhesive forces of the probe to the surfaces. • Characterization in aqueous environment is important in bio-applications of sapphire. - Abstract: Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO{sub 2} probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

  4. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  5. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  6. Numerical simulation of terahertz-wave propagation in photonic crystal waveguide based on sapphire shaped crystal

    International Nuclear Information System (INIS)

    Zaytsev, Kirill I; Katyba, Gleb M; Mukhina, Elena E; Kudrin, Konstantin G; Karasik, Valeriy E; Yurchenko, Stanislav O; Kurlov, Vladimir N; Shikunova, Irina A; Reshetov, Igor V

    2016-01-01

    Terahertz (THz) waveguiding in sapphire shaped single crystal has been studied using the numerical simulations. The numerical finite-difference analysis has been implemented to characterize the dispersion and loss in the photonic crystalline waveguide containing hollow cylindrical channels, which form the hexagonal lattice. Observed results demonstrate the ability to guide the THz-waves in multi-mode regime in wide frequency range with the minimal power extinction coefficient of 0.02 dB/cm at 1.45 THz. This shows the prospectives of the shaped crystals for highly-efficient THz waveguiding. (paper)

  7. Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

    Science.gov (United States)

    Freeman, Jon C.; Mueller, Wolfgang

    2008-01-01

    Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

  8. Neutron method for NDA in the Sapphire Project

    International Nuclear Information System (INIS)

    Lewis, K.D.

    1995-01-01

    The implementation of Project Sapphire, the top-secret mission to the Republic of Kazakhstan to recover weapons-grade nuclear materials, consisted of four major elements: (1) repacking of fissile material from Kazakh containers into suitable U.S. containers; (2) nondestructive analyses (NDA) to quantify the 235 U content of each container for nuclear criticality safety and compliance purposes; (3) packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of the Sapphire operations to analyze uranium/beryllium (U/Be) alloys and compounds for 235 U content

  9. A neutron method for NDA analysis in the SAPPHIRE Project

    International Nuclear Information System (INIS)

    Lewis, K.D.

    1995-01-01

    The implementation of Project SAPPHIRE, the top secret mission to the Republic of Kazakhstan to recover weapons grade nuclear materials, consisted of four major elements: (1) the re-packing of fissile material from Kazakh containers into suitable US containers; (2) nondestructive analyses (NDA) to quantify the U-235 content of each container for Nuclear Criticality Safety and compliance purposes; (3) the packaging of the fissile material containers into 6M/2R drums, which are internationally approved for shipping fissile material; and (4) the shipping or transport of the recovered fissile material to the United States. This paper discusses the development and application of a passive neutron counting technique used in the NDA phase of SAPPHIRE operations to analyze uranium/beryllium (U/Be) alloys and compounds for U-235 content

  10. Photonics of 2D gold nanolayers on sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Nabatov, B. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation); Konovko, A. A.; Belov, I. V.; Gizetdinov, R. M.; Andreev, A. V. [Moscow State University (Russian Federation); Kanevsky, V. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    Gold layers with thicknesses of up to several nanometers, including ordered and disordered 2D nanostructures of gold particles, have been formed on sapphire substrates; their morphology is described; and optical investigations are carried out. The possibility of increasing the accuracy of predicting the optical properties of gold layers and 2D nanostructures using quantum-mechanical models based on functional density theory calculation techniques is considered. The application potential of the obtained materials in photonics is estimated.

  11. Time dependent temperature distribution in pulsed Ti:sapphire lasers

    Science.gov (United States)

    Buoncristiani, A. Martin; Byvik, Charles E.; Farrukh, Usamah O.

    1988-01-01

    An expression is derived for the time dependent temperature distribution in a finite solid state laser rod for an end-pumped beam of arbitrary shape. The specific case of end pumping by circular (constant) or Gaussian beam is described. The temperature profile for a single pump pulse and for repetitive pulse operation is discussed. The particular case of the temperature distribution in a pulsed titanium:sapphire rod is considered.

  12. Thermal neutron scattering kernels for sapphire and silicon single crystals

    International Nuclear Information System (INIS)

    Cantargi, F.; Granada, J.R.; Mayer, R.E.

    2015-01-01

    Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

  13. Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

    International Nuclear Information System (INIS)

    Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

    1986-01-01

    This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

  14. Structural characterization of AgGaTe{sub 2} layers grown on a- and c-sapphire substrates by a closed space sublimation method

    Energy Technology Data Exchange (ETDEWEB)

    Uruno, Aya; Usui, Ayaka [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2014-07-15

    AgGaTe{sub 2} layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe{sub 2} layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag{sub 5}Te{sub 3} was formed along with the AgGaTe{sub 2} when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe{sub 2} without Ag{sub 5}Te{sub 3} layers could be grown on a-plane sapphire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

    2004-09-01

    The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

    Science.gov (United States)

    Zhu, Nai-Wei; Hu, Ming; Xia, Xiao-Xu; Wei, Xiao-Ying; Liang, Ji-Ran

    2014-04-01

    The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

  17. Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

    International Nuclear Information System (INIS)

    Zhu Nai-Wei; Hu Ming; Xia Xiao-Xu; Wei Xiao-Ying; Liang Ji-Ran

    2014-01-01

    The VO 2 thin film with high performance of metal–insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO 2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO 2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO 2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively. (interdisciplinary physics and related areas of science and technology)

  18. Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

    Science.gov (United States)

    Carroz, L.; Duffar, T.

    2018-05-01

    In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

  19. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  20. Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

    Science.gov (United States)

    Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

    2017-09-01

    Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

  1. Epitactical FeAl films on sapphire and their magnetic properties

    International Nuclear Information System (INIS)

    Trautvetter, Moritz

    2011-01-01

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  2. Origin for the shape of Au small crystals formed inside sapphire by ion implantation

    International Nuclear Information System (INIS)

    Ohkubo, M.; Hioki, T.

    1989-01-01

    In ion-implanted oxides, precipitation is usually formed except the case of forming solid solution. The precipitation comprises the metallic particles of implanted atoms, the oxide of implanted atoms, the metal of matrix elements, the compound of implanted atoms and matrix and so on. In particular, the metallic particles of implanted atoms are frequently faceted. From the facets, the equilibrium shape of crystals can be imagined. The equilibrium shape is determined so that the surface free energy is to be minimized. However, the shape of the metallic particles precipitated inside oxides should not be such equilibrium shape because they come in contact with foreign crystals. As the result, in the precipitation phenomena induced by ion implantation, the crystal structures of precipitated particles and substrates, the crystallographic relation between two crystals, interfacial energy and so on must be taken in consideration. In this paper, the report is made on the shape of the metallic gold particles formed inside sapphires by ion implantation that it was caused by only the crystal habit of sapphires regardless of the above-mentioned complexity. (K.I.)

  3. Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

    International Nuclear Information System (INIS)

    Okada, Narihito; Tadatomo, Kazuyuki

    2012-01-01

    Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

  4. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  5. The active control devices of the size of products based on sapphire measuring tips with three degrees of freedom

    Science.gov (United States)

    Leun, E. V.; Leun, V. I.; Sysoev, V. K.; Zanin, K. A.; Shulepov, A. V.; Vyatlev, P. A.

    2018-01-01

    The article presents the results of the calculation of the load capacity of the active control devices (ACD) sapphire tip, which showed nearly 30-fold margin of safety to shock loads and experimental researches in mechanical contact with 5 cogs cutter 15 mm in diameter rotating with a frequency of 1000 rpm, which confirmed the calculations, determined the surface roughness Rz of the contact area of no more than 0.15 μm. Conditions have been created for recording without distortion of the image through a sapphire tip in contact with the processed article. A ACD design with new functionality is proposed: with one, two and three degrees of freedom of the sapphire tip and allows measuring the taper of the article and measurements on the chord. It is shown that with the implementation of their fixed head like the frame of the gyroscope with the rotations around the axes OY and OZ. It is shown that the rotation of the tip around the axis OX can be replaced more convenient for the implementation of the angular offset of the transferred image due to rotation of the output end of the flexible optical waveguide relative to the input. This makes it possible to reduce the "blurring of the image" during registration of the fast moving product profile when the slope of the recorder lines coincides with the slope of the edges of the image elements of the selected moving elements of the article.

  6. Superconducting accelerometer using niobium-on-sapphire rf resonator

    International Nuclear Information System (INIS)

    Blair, D.G.

    1979-01-01

    An accelerometer is described which uses a rf niobium-on-sapphire resonator as its sensor element. The accelerometer uses a magnetically levitated spool as a test mass and the spool modulates the inductance of the resonator; its position is servo controlled to maintain the resonator at the external rf excitation frequency. The accelerometer has high sensitivity over the full audio frequency range, but is optimized for frequencies between 100 Hz and 1 kHz, where the calculated displacement sensitivity approaches 10 -15 cm for a 1 Hz measurement bandwidth. The system noise sources are analyzed and possible improvements are discussed

  7. Ultrafast, ultrahigh-peak power Ti:sapphire laser system

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

    2001-01-01

    We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

  8. Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

    Science.gov (United States)

    Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

    1988-01-01

    Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

  9. Characteristics of prompt fission gamma-ray emission - Experimental results and predictions

    International Nuclear Information System (INIS)

    Oberstedt, Andreas; Billnert, Robert; Oberstedt, Stephan

    2014-01-01

    Systematics from 2001, describing prompt fission gamma-ray spectra (PFGS) characteristics as function of mass and atomic number of the fissioning system, has been revisited and parameters have been revised based on recent experimental results. Although originally expressed for spontaneous and thermal neutron-induced fission, validity for fast neutrons was assumed and applied to predict PFGS characteristics for the reaction n + 238 U up to incident neutron energies of E n = 20 MeV. The results from this work are in good agreement with corresponding results from both model calculations and experiments. (authors)

  10. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  11. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Science.gov (United States)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-12-01

    Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  12. Statistical evaluation of characteristic SDDLV-induced stress resultants to discriminate between undamaged and damaged elements

    DEFF Research Database (Denmark)

    Hansen, Lasse Majgaard; Johansen, Rasmus Johan; Ulriksen, Martin Dalgaard

    2015-01-01

    of modified characteristic stress resultants, which are compared to a pre-defined tolerance value, without any thorough statistical evaluation. In the present paper, it is tested whether three widely-used statistical pattern-recognition-based damage-detection methods can provide an effective statistical...... evaluation of the characteristic stress resultants, hence facilitating general discrimination between damaged and undamaged elements. The three detection methods in question enable outlier analysis on the basis of, respectively, Euclidian distance, Hotelling’s statistics, and Mahalanobis distance. The study...... alternately to an undamaged reference model with known stiffness matrix, hereby, theoretically, yielding characteristic stress resultants approaching zero in the damaged elements. At present, the discrimination between potentially damaged elements and undamaged ones is typically conducted on the basis...

  13. Thermal stress resistance of ion implanted sapphire crystals

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

    1999-01-01

    Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

  14. Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

    International Nuclear Information System (INIS)

    Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

    2004-01-01

    We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

  15. Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

    Science.gov (United States)

    Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

    2018-07-01

    We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

  16. Assessment of characteristic failure envelopes for intact rock using results from triaxial tests

    OpenAIRE

    Muralha, J.; Lamas, L.

    2014-01-01

    The paper presents contributions to the statistical study of the parameters of the Mohr-Coulomb and Hoek-Brown strength criteria, in order to assess the characteristic failure envelopes for intact rock, based on the results of several sets of triaxial tests performed by LNEC. 10p DBB/NMMR

  17. Effect of coating thickness on interfacial shear behavior of zirconia-coated sapphire fibers in a polycrystalline alumina matrix

    International Nuclear Information System (INIS)

    Hellmann, J.R.; Chou, Y.S.

    1995-01-01

    The effect of zirconia (ZrO 2 ) interfacial coatings on the interfacial shear behavior in sapphire reinforced alumina was examined in this study. Zirconia coatings of thicknesses ranging from 0.15 to 1.45 μm were applied to single crystal sapphire (Saphikon) fibers using a particulate loaded sol dipping technique. After calcining at 1,100 C in air, the coated fibers were incorporated into a polycrystalline alumina matrix via hot pressing. Interfacial shear strength and sliding behavior of the coated fibers was examined using thin-slice indentation fiber pushout and pushback techniques. In all cases, debonding and sliding occurred at the interface between the fibers and the coating. The coatings exhibited a dense microstructure and led to a higher interfacial shear strength (> 240 MPa) and interfacial sliding stress (> 75 MPa) relative to previous studies on the effect of a porous interphase on interfacial properties. The interfacial shear strength decreased with increasing fiber coating thickness (from 389 ± 59 to 241 ± 43 MPa for 0.15 to 1.45 microm thick coatings, respectively). Sliding behavior exhibited load modulation with increasing displacement during fiber sliding which is characteristic of fiber roughness-induced stick-slip. The high interfacial shear strengths and sliding stresses measured in this study, as well as the potentially strength degrading surface reconstruction observed on the coated fibers after hot pressing and heat treatment, indicate that dense zirconia coatings are not suitable candidates for optimizing composite toughness and strength in the sapphire fiber reinforced alumina system

  18. Properties of grazing-incidence pulsed Ti:sapphire laser oscillator

    International Nuclear Information System (INIS)

    Tamura, Koji

    2008-03-01

    A pulsed operation of a grazing-incidence double-grating Ti:sapphire laser oscillator that consists of a gain medium, back mirror, and a pair of gratings, was studied. A stable single-longitudinal-mode operation was achievable. From the calculation of the optical path trajectories, it can be explained by the increased beam walk-off from the gain medium by the introduction of the second grating compared with the conventional single-grating grazing-incidence cavity geometry. The improved spectral property was also explained by the calculations of increased dispersion. The results indicate that the oscillator configuration was useful for the applications which require stable mode operation and narrow linewidth such as the high resolution spectroscopy or the laser isotope separation. (author)

  19. Narrow linewidth operation of the RILIS titanium: Sapphire laser at ISOLDE/CERN

    CERN Document Server

    Rothe, S; Wendt, K D A; Fedosseev, V N; Kron, T; Marsh, B A

    2013-01-01

    A narrow linewidth operating mode for the Ti:sapphire laser of the CERN ISOLDE Resonance Ionization Laser Ion Source (RILIS) has been developed. This satisfies the laser requirements for the programme of in-source resonance ionization spectroscopy measurements and improves the selectivity for isomer separation using RILIS. A linewidth reduction from typically 10 GHz down to 1 GHz was achieved by the intra-cavity insertion of a second (thick) Fabry-Perot etalon. Reliable operation during a laser scan was achieved through motorized control of the tilt angle of each etalon. A scanning, stabilization and mode cleaning procedure was developed and implemented in LabVIEW. The narrow linewidth operation was confirmed in a high resolution spectroscopy study of francium isotopes by the Collinear Resonance Ionization Spectroscopy experiment. The resulting laser scans demonstrate the suitability of the laser, in terms of linewidth, spectral purity and stability for high resolution in-source spectroscopy and isomer select...

  20. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

    International Nuclear Information System (INIS)

    Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    2006-01-01

    High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

  1. Femtosecond laser micromachining of sapphire capillaries for laser-wakefield acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Messner, Philipp; Delbos, Niels Matthias; Maier, Andreas R. [CFEL, Center for Free-Electron Laser Science, 22607 Hamburg (Germany); University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany); Calmano, Thomas [University of Hamburg, Institute of Experimental Physics, 22761 Hamburg (Germany)

    2015-07-01

    Laser-plasma accelerator are promising candidates to provide ultra-relativistic electron beams for compact light sources. One factor that limits the achievable electron beam energy in a laser plasma accelerator is the Rayleigh length of the driver laser, which dictates the length over which the electron beams can effectively be accelerated. To overcome this limitation lasers can be guided in a capillary waveguide to extend the acceleration length beyond the Rayleigh length. The production of waveguide structures on scales, that are suitable for plasma acceleration is very challenging. Here, we present experimental results from waveguide machining in sapphire crystals using a Clark MXR CPA 2010 laser with a wavelength of 775nm, 1KHZ repetition rate and a pulse duration of 160 fs. We discuss the effects of different parameters like energy, lens types, writing speed and polarisation on the size and shape of the capillaries, and compare the performance of different parameter sets.

  2. Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

    Science.gov (United States)

    Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

    2018-05-01

    Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

  3. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

    International Nuclear Information System (INIS)

    Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

    2012-01-01

    The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

    Energy Technology Data Exchange (ETDEWEB)

    Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

    2000-07-01

    Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

  5. Optical and structural behaviour of Mn implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Franco, N.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2006-01-01

    Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 x 10 17 cm -2 . The samples were annealed at 1000 deg. C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 x 10 16 cm -2 , as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl 2 O 4 . On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission

  6. The SAPPHIRE and 50 MT projects at BWXT, Lynchburg, VA

    International Nuclear Information System (INIS)

    Thiele, R.; Horn, B.; Coates, C.W.; Stainback, J.R.

    2001-01-01

    Full text: When the SAPPHIRE project for the down-blending of HEU material of Khazak origin was initiated in 1996 at BWX Technologies (BWXT) formally Babcock and Wilcox in Lynchburg, VA and the Agency was requested to apply its specially designed safeguards measures to the process with a view to provide assurance to the international community that down-blending had actually taken place as stipulated in the USA-Khazak agreement a learning process was initiated from this effort culminating in the current 50 MT downblending process at the same facility with BWXT, the USA Authorities, and the Agency as partners in this technologically advanced enterprise aimed at the downgrading of a substantial quantity of weapons grade material. In the present paper an overview is provided of the road leading to an effective, and mutually agreeable safeguards approach for carrying out verifications in the sensitive environment of a facility devoted to HEU uranium processing. (author)

  7. CMOS Silicon-on-Sapphire RF Tunable Matching Networks

    Directory of Open Access Journals (Sweden)

    Chamseddine Ahmad

    2006-01-01

    Full Text Available This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 m silicon-on-sapphire (SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

  8. Interfacial reactions between sapphire and Ag–Cu–Ti-based active braze alloys

    International Nuclear Information System (INIS)

    Ali, Majed; Knowles, Kevin M.; Mallinson, Phillip M.; Fernie, John A.

    2016-01-01

    The interfacial reactions between two commercially available Ag–Cu–Ti-based active braze alloys and sapphire have been studied. In separate experiments, Ag–35.3Cu–1.8Ti wt.% and Ag–26.7Cu–4.5Ti wt.% alloys have been sandwiched between pieces of R-plane orientated sapphire and heated in argon to temperatures between 750 and 900 °C for 1 min. The phases at the Ag–Cu–Ti/sapphire interfaces have been studied using selected area electron diffraction, energy dispersive X-ray spectroscopy and electron energy loss spectroscopy. Gradual and subtle changes at the Ag–Cu–Ti/sapphire interfaces were observed as a function of temperature, along with the formation of a transient phase that permitted wetting of the sapphire. Unequivocal evidence is shown that when the active braze alloys melt, titanium first migrates to the sapphire and reacts to dissolve up to ∼33 at.% oxygen, forming a nanometre-size polycrystalline layer with a chemical composition of Ti 2 O 1–x (x ≪ 1). Ti 3 Cu 3 O particles subsequently nucleate behind the Ti 2 O 1–x layer and grow to become a continuous micrometre-size layer, replacing the Ti 2 O 1–x layer. Finally at 845 °C, a nanometre-size γ-TiO layer forms on the sapphire to leave a typical interfacial structure of Ag–Cu/Ti 3 Cu 3 O/γ-TiO/sapphire consistent with that seen in samples of polycrystalline alumina joined to itself with these active braze alloys. These experimental observations have been used to establish a definitive bonding mechanism for the joining of sapphire with Ag–Cu alloys activated by small amounts of titanium.

  9. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  10. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    International Nuclear Information System (INIS)

    Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

    2015-01-01

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al_2O_3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  11. Application of the DSA preconditioned GMRES formalism to the method of characteristics - First results

    International Nuclear Information System (INIS)

    Le Tellier, R.; Hebert, A.

    2004-01-01

    The method of characteristics is well known for its slow convergence; consequently, as it is often done for SN methods, the Generalized Minimal Residual approach (GMRES) has been investigated for its practical implementation and its high reliability. GMRES is one of the most effective Krylov iterative methods to solve large linear systems. Moreover, the system has been 'left preconditioned' with the Algebraic Collapsing Acceleration (ACA) a variant of the Diffusion Synthetic Acceleration (DSA) based on I. Suslov's former works. This paper presents the first numerical results of these methods in 2D geometries with material discontinuities. Indeed, previous investigations have shown a degraded effectiveness of Diffusion Synthetic Accelerations with this kind of geometries. Results are presented for 9 x 9 Cartesian assemblies in terms of the speed of convergence of the inner iterations (fixed source) of the method of characteristics. It shows a significant improvement on the convergence rate. (authors)

  12. The electric power market in Spain characteristics, evolution and results from January 1998 to February 2009

    International Nuclear Information System (INIS)

    Gonzalez Fernandez-Castaneda, J. J.

    2009-01-01

    The article presents the organized spanish Electricity production market. The main characteristics of the Day-ahead and Intra day spo to markets, and the evolution and results achieved along the more than 11 years of operations are presented. The relations between the Spanish market and the rest of the European electricity markets, with especial emphasis on those markets interconnected with the Spanish system, are also described. (Author)

  13. Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

    Science.gov (United States)

    Maskell, P.; Oram, L.

    The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

  14. Advances in Trace Element “Fingerprinting” of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    Directory of Open Access Journals (Sweden)

    F. Lin Sutherland

    2014-12-01

    Full Text Available Mogok gem corundum samples from twelve localities were analyzed for trace element signatures (LA-ICP-MS method and oxygen isotope values (δ18O, by laser fluorination. The study augmented earlier findings on Mogok gem suites that suggested the Mogok tract forms a high vanadium gem corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents. Oxygen isotope values (δ18O for the ruby and high Si-Ca-Ga corundum (20‰–25‰ and for sapphire (10‰–20‰ indicate typical crustal values, with values >20‰ being typical of carbonate genesis. The high Si-Ca-Ga ruby has high chromium (up to 3.2 wt % Cr and gallium (up to 0. 08 wt % Ga compared to most Mogok ruby (<2 wt % Cr; <0.02 wt % Ga. In trace element ratio plots the Si-Ca-Ga-rich corundum falls into separate fields from the typical Mogok metamorphic fields. The high Ga/Mg ratios (46–521 lie well within the magmatic range (>6, and with other features suggest a potential skarn-like, carbonate-related genesis with a high degree of magmatic fluid input The overall trace element results widen the range of different signatures identified within Mogok gem corundum suites and indicate complex genesis. The expanded geochemical platform, related to a variety of metamorphic, metasomatic and magmatic sources, now provides a wider base for geographic typing of Mogok gem corundum suites. It allows more detailed comparisons with suites from other deposits and will assist identification of Mogok gem corundum sources used in jewelry.

  15. The surface chemistry of sapphire-c: A literature review and a study on various factors influencing its IEP.

    Science.gov (United States)

    Lützenkirchen, J; Franks, G V; Plaschke, M; Zimmermann, R; Heberling, F; Abdelmonem, A; Darbha, G K; Schild, D; Filby, A; Eng, P; Catalano, J G; Rosenqvist, J; Preocanin, T; Aytug, T; Zhang, D; Gan, Y; Braunschweig, B

    2018-01-01

    A wide range of isoelectric points (IEPs) has been reported in the literature for sapphire-c (α-alumina), also referred to as basal plane, (001) or (0001), single crystals. Interestingly, the available data suggest that the variation of IEPs is comparable to the range of IEPs encountered for particles, although single crystals should be much better defined in terms of surface structure. One explanation for the range of IEPs might be the obvious danger of contaminating the small surface areas of single crystal samples while exposing them to comparatively large solution reservoirs. Literature suggests that factors like origin of the sample, sample treatment or the method of investigation all have an influence on the surfaces and it is difficult to clearly separate the respective, individual effects. In the present study, we investigate cause-effect relationships to better understand the individual effects. The reference IEP of our samples is between 4 and 4.5. High temperature treatment tends to decrease the IEP of sapphire-c as does UV treatment. Increasing the initial miscut (i.e. the divergence from the expected orientation of the crystal) tends to increase the IEP as does plasma cleaning, which can be understood assuming that the surfaces have become less hydrophobic due to the presence of more and/or larger steps with increasing miscut or due to amorphisation of the surface caused by plasma cleaning. Pre-treatment at very high pH caused an increase in the IEP. Surface treatments that led to IEPs different from the stable value of reference samples typically resulted in surfaces that were strongly affected by subsequent exposure to water. The streaming potential data appear to relax to the reference sample behavior after a period of time of water exposure. Combination of the zeta-potential measurements with AFM investigations support the idea that atomically smooth surfaces exhibit lower IEPs, while rougher surfaces (roughness on the order of nanometers) result

  16. Data characteristics and preliminary results from the atacama b-mode search (ABS)

    Science.gov (United States)

    Visnjic, Catherine

    The Atacama B-Mode Search (ABS) is a 145 GHz polarimeter located at a high altitude site on Cerro Toco, in the Andes of northern Chile. Having deployed in early 2012, it is currently in its second year of operation, observing the polarization of the Cosmic Microwave Background (CMB). It seeks to probe the as yet undetected odd-parity B-modes of the polarization, which would have been created by the primordial gravitational wave background (GWB) predicted by theories of inflation. The magnitude of the B-mode signal is characterized by the tensor-to-scalar ratio, r. ABS features 60 cm cryogenic reflectors in the crossed-Dragone configuration, and a warm, continuously rotating sapphire half-wave plate to modulate the polarization of incoming radiation. The focal plane consists of 480 antenna-coupled transition edge sensor bolometers, arranged in orthogonal pairs for polarization sensitivity, and coupled to feedhorns in a hexagonal array. In this thesis we describe the ABS instrument in the state in which it is now operating, outline the first season of observations, and characterize the data obtained. Focusing on observations of the primary CMB field during a one month reference period, we detail the algorithms currently used to select the data suitable for making maps. This is the first pass at data cuts and provides a conservative estimate for the sensitivity of ABS to the polarization modes in the sky. We project that with one year total observation time of the primary CMB field, ABS should be able to detect the B-mode signal at roughly the level of r = 0.03.

  17. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    International Nuclear Information System (INIS)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

    2006-01-01

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

  18. Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

    International Nuclear Information System (INIS)

    Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

    2006-01-01

    The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

  19. Single mode operation in a pulsed Ti:sapphire laser oscillator with a grazing-incidence four-mirror cavity

    CERN Document Server

    Ko, D K; Binks, D J; Gloster, L A W; King, T A

    1998-01-01

    We demonstrate stable single mode operation in a pulsed Ti:sapphire laser oscillator with a novel grazing-incidence four-mirror coupled cavity. This cavity consists of a grating, a gain medium, and four mirrors and, therefore, has a four-arm interferometer configuration. Through the interferometric effect, we could suppress the adjacent modes and obtain stable single mode operation with a bandwidth of < 200 MHz. We also have developed a general analysis of the laser modes and the threshold conditions for configuration and the experimental results agree well with the theoretical predictions.

  20. MICROBIOLOGICAL CHARACTERISTICS OF MILK FROM DONKEYS FARMED IN CAMPANIA REGION: PRELIMINARY RESULTS

    Directory of Open Access Journals (Sweden)

    E. Sarno

    2012-08-01

    Full Text Available Interest in donkey’s milk destined to human consumption is increasing owing to its complex composition and unique functional properties. The microbiological profile of donkeys’ raw milk was investigated. Individual donkey milk samples were collected from 8 asses after mechanical milking and filtration in a farm of Campania region. A total of 133 samples were analyzed. Total plate count bacteria and Enterobacteriaceae were enumerated. Other microbiological characteristics were monitored as established by legislation in force on the sale of raw milk. Results showed a low contamination level of the raw milk in accordance with other authors. No correlations were evidenced between milk contamination and lactation stage.

  1. Defining Dynamic Characteristics of Multilink Pendulum System with Comparison of the Calculated and Experimental Results

    Directory of Open Access Journals (Sweden)

    V. A. Gribkov

    2015-01-01

    Full Text Available We consider the multilink pendulum system consisting of six physical pendulums. A pendulum (carrier has inertia parameters, which significantly exceed the remaining (carried ones placed on the carrier. In addition to the system under analysis, in particular, the paper presents a design scheme for a two-stage liquid fuel rocket using pendulums as the analogues of fluctuating fuel. Pendulum models also find application to solve problems of stabilization of space tether systems. The objective of the study is to determine dynamic characteristics of the said sixmembered pendulum system, as well as to identify specific dynamic properties inherent in objects of this kind. Dynamic characteristics of the system are determined by calculations. A physical model of the pendulum allowed us to compare the calculated and experimental results. To conduct the frequency tests of the pendulum model three pilot units have been created. The first two units turned out to be inappropriate for fulfilling the experimental tasks for various reasons. The third unit enabled us to obtain desirable experimental results. The "calculation–experiment” discrepancy on the natural frequencies of the pendulum model for the majority of frequencies was less than 5%. We analyzed the dynamic features of multilink pendulum systems "carried by the carrier unit links". The analysis results are applicable to the above-noted object classes of rocket and space technology.

  2. Early Period Results and Clinical Characteristics of Upper Gastrointestinal Endoscopy in Sivrihisar State Hospital

    Directory of Open Access Journals (Sweden)

    Ozgur Turk

    2014-12-01

    Full Text Available Aim: Our aim was to identify the characteristics of the patient that performed upper gastrointestinal endoscopy in a new established endoscopy unit of a state hospital. We want to present the spectrum of gastrointestinal diseases in our hospitals region. Material and Method: We analyzed patients upper endoscopy results according to age, sex, complaints, clinical characteristics, type of anesthesia, and the necessity of biopsy. We reviewed 256 patients data between 2013 December-2014 July. All endoscopies were performed by same surgeon. Results: The highest complaint was epigastric pain (n=112, 43, 8%. Other complaints were followed as dyspepsia (n=84, 32.8%, heartburn (n=42, 16.4%, nausea (n=4, 1.6%, vomiting (n=2, 0.8%, dysphagia (n=6, 2.3%. We determined 218 gastritis (85.2%, 64 hiatal hernia (25%, 120 esophagitis (46.9%, 76 duodenitis (29.7%, 4 gastric ulcer (1.6%, 18 duodenal ulcers (7%, 20 bile reflux (7.8%, 26 Gastro esophageal reflux disease (GERD in patients (10.2%. 10 patients reported as normal (3.9%. Biopsy was performed in 186 of the patients. Discussion: Endoscopy can become an early diagnostic examination by increasing the availability of endoscopy. Also alarm symptoms should not be ignored and endoscopy should perform immediately in symptomatic patients. As an early result of upper gastrointestinal endoscopies that performed in this study; gastritis, esophagitis, duodenitis and hiatal hernia are common gastrointestinal diseases in our region.

  3. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-01-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  4. Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

    Science.gov (United States)

    Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

    2018-03-01

    The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

  5. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    International Nuclear Information System (INIS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-01-01

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  6. Order in nanometer thick intergranular films at Au-sapphire interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2011-08-15

    Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

  7. The Clinical Characteristics of Acute Cerebrovascular Accidents Resulting from Ovarian Hyperstimulation Syndrome.

    Science.gov (United States)

    Yang, Shuna; Yuan, Junliang; Qin, Wei; Li, Yue; Yang, Lei; Hu, Wenli

    2017-01-01

    Ovarian hyperstimulation syndrome (OHSS) is a serious complication that occurs after the ovarian-induction treatment. Acute cerebrovascular accident is one of the most dangerous manifestations of the syndrome. However, the characteristics of stroke resulting from OHSS have so far not been well summarised in any study. We reported 2 cases of acute cerebrovascular accidents secondary to OHSS. And then we performed a literature search for reports on this type of stroke, and summarised their characteristics. Thirty-six published cases of this type of stroke were reviewed. Thirty two out of 36 (88.9%) of the women were 35 years old or younger. Stroke in 28 out of 36 (77.8%) of these cases was caused by arterial thrombosis. In 17 out of 28 cases, the involved cerebral vascular branches were mainly middle cerebral artery (MCA) and internal carotid artery (ICA). The acute cerebrovascular accidents happened 7 and 9.25 days after embryo transplantation or 8 and 8.33 days after last human chorionic gonadotropin treatment respectively. The prognosis of patients was relatively good after anticoagulation and some supportive treatments. The MCA and ICA are easily involved in stroke resulting from OHSS. The young age may be a risk factor for developing stroke secondary to OHSS. Once thromboembolism develops, administering appropriate therapy is crucial. © 2017 S. Karger AG, Basel.

  8. Origin of the 2.45 eV luminescence band observed in ZnO epitaxial layers grown on c-plane sapphire by chemical vapour deposition

    International Nuclear Information System (INIS)

    Saroj, R K; Dhar, S

    2014-01-01

    Zinc oxide epitaxial layers have been grown on c-plane sapphire substrates by the chemical vapour deposition (CVD) technique. A structural study shows (0001)-oriented films with good crystalline quality. The temperature and excitation power dependence of the photoluminescence (PL) characteristics of these layers is studied as a function of various growth parameters, such as the growth temperature, oxygen flow rate and Zn flux, which suggest that the origin of the broad visible luminescence (VL), which peaks at 2.45 eV, is the transition between the conduction band and the Zn vacancy acceptor states. A bound excitonic transition observed at 3.32 eV in low temperature PL has been identified as an exciton bound to the neutral Zn vacancy. Our study also reveals the involvement of two activation processes in the dynamics of VL, which has been explained in terms of the fluctuation of the capture barrier height for the holes trapped in Zn vacancy acceptors. The fluctuation, which might be a result of the inhomogeneous distribution of Zn vacancies, is found to be associated with an average height of 7 and 90 meV, respectively, for the local and global maxima. (paper)

  9. Surface-Energy-Anisotropy-Induced Orientation Effects on RayleighInstabilities in Sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Santala, Melissa; Glaeser, Andreas M.

    2006-01-01

    Arrays of controlled-geometry, semi-infinite pore channels of systematically varied crystallographic orientation were introduced into undoped m-plane (10{bar 1}0) sapphire substrates using microfabrication techniques and ion-beam etching and subsequently internalized by solid-state diffusion bonding. A series of anneals at 1700 C caused the breakup of these channels into discrete pores via Rayleigh instabilities. In all cases, channels broke up with a characteristic wavelength larger than that expected for a material with isotropic surface energy, reflecting stabilization effects due to surface-energy anisotropy. The breakup wavelength and the time required for complete breakup varied significantly with channel orientation. For most orientations, the instability wavelength for channels of radius R was in the range of 13.2R-25R, and complete breakup occurred within 2-10 h. To first order, the anneal times for complete breakup scale with the square of the breakup wavelength. Channels oriented along a <11{bar 2}0> direction had a wavelength of {approx} 139R, and required 468 h for complete breakup. Cross-sectional analysis of channels oriented along a <11{bar 2}0> direction showed the channel to be completely bounded by stable c(0001), r{l_brace}{bar 1}012{r_brace}, and s{l_brace}10{bar 1}1{r_brace} facets.

  10. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

    Directory of Open Access Journals (Sweden)

    Engin Arslan

    2014-01-01

    Full Text Available The 150 nm thick, (0001 orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm template/(0001 sapphire substrate. The indium (x concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x, lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002 and asymmetric (10–15 reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.

  11. A Pharmaceutical Bioethics Consultation Service: Six-Year Descriptive Characteristics and Results of a Feedback Survey.

    Science.gov (United States)

    Van Campen, Luann E; Allen, Albert J; Watson, Susan B; Therasse, Donald G

    2015-04-03

    Background : Bioethics consultations are conducted in varied settings, including hospitals, universities, and other research institutions, but there is sparse information about bioethics consultations conducted in corporate settings such as pharmaceutical companies. The purpose of this article is to describe a bioethics consultation service at a pharmaceutical company, to report characteristics of consultations completed by the service over a 6-year period, and to share results of a consultation feedback survey. Methods : Data on the descriptive characteristics of bioethics consultations were collected from 2008 to 2013 and analyzed in Excel 2007. Categorical data were analyzed via the pivot table function, and time-based variables were analyzed via formulas. The feedback survey was administered to consultation requesters from 2009 to 2012 and also analyzed in Excel 2007. Results : Over the 6-year period, 189 bioethics consultations were conducted. The number of consultations increased from five per year in 2008 to approximately one per week in 2013. During this time, the format of the consultation service was changed from a committee-only approach to a tiered approach (tailored to the needs of the case). The five most frequent topics were informed consent, early termination of a clinical trial, benefits and risks, human biological samples, and patient rights. The feedback survey results suggest the consultation service is well regarded overall and viewed as approachable, helpful, and responsive. Conclusions : Pharmaceutical bioethics consultation is a unique category of bioethics consultation that primarily focuses on pharmaceutical research and development but also touches on aspects of clinical ethics, business ethics, and organizational ethics. Results indicate there is a demand for a tiered bioethics consultation service within this pharmaceutical company and that advice was valued. This company's experience indicates that a bioethics consultation service

  12. Thermal surface characteristics of coal fires 1 results of in-situ measurements

    Science.gov (United States)

    Zhang, Jianzhong; Kuenzer, Claudia

    2007-12-01

    Natural underground coal fires are fires in coal seams occurring subsurface. The fires are ignited through a process named spontaneous combustion, which occurs based on a natural reaction but is usually triggered through human interaction. Coal mining activities expose coal to the air. This leads to the exothermal oxidation of the carbon in the coal with the air's oxygen to CO 2 and - under certain circumstances - to spontaneous combustion. Coal fires occur in many countries world wide - however, currently the Chinese coal mining industry faces the biggest problems with coal fires. Coal fires destroy the valuable resource coal and furthermore lead to many environmental degradation phenomena such as the deterioration of surrounding vegetation, land subsidence and the emission of toxic gasses (CO, N 2O). They additionally contribute to the emission of green house relevant gasses such as CO 2 and CH 4 to the atmosphere. In this paper we present thermal characteristics of coal fires as measured in-situ during a field campaign to the Wuda coal fire area in south-central Inner Mongolia, China. Thermal characteristics include temperature anomaly measurements at the surface, spatial surface temperature profiles of fire areas and unaffected background areas, diurnal temperature profiles, and temperature measurements inside of coal fire induced cracks in the overlying bedrock. For all the measurements the effects of uneven solar heating through influences of slope and aspect are considered. Our findings show that coal fires result in strong or subtle thermal surface anomalies. Especially the latter can easily be influenced by heating of the surrounding background material through solar influences. Temperature variation of background rocks with different albedo, slope, aspect or vegetation cover can substantially influence the detectability of thermal anomalies. In the worst case coal fire related thermal anomalies can be completely masked by solar patterns during the daytime

  13. Synthesis of single-crystalline Al layers in sapphire

    International Nuclear Information System (INIS)

    Schlosser, W.; Lindner, J.K.N.; Zeitler, M.; Stritzker, B.

    1999-01-01

    Single-crystalline, buried aluminium layers were synthesized by 180 keV high-dose Al + ion implantation into sapphire at 500 deg. C. The approximately 70 nm thick Al layers exhibit in XTEM investigations locally abrupt interfaces to the single-crystalline Al 2 O 3 top layer and bulk, while thickness and depth position are subjected to variations. The layers grow by a ripening process of oriented Al precipitates, which at low doses exist at two different orientations. With increasing dose, precipitates with one out of the two orientations are observed to exist preferentially, finally leading to the formation of a single-crystalline layer. Al outdiffusion to the surface and the formation of spherical Al clusters at the surface are found to be competing processes to buried layer formation. The formation of Al layers is described by Rutherford Backscattering Spectroscopy (RBS), Cross-section transmission electron microscopy (XTEM) and Scanning electron microscopy (SEM) studies as a function of dose, temperature and substrate orientation

  14. The Test for Flow Characteristics of Tubular Fuel Assembly(II) - Experimental results and CFD analysis

    International Nuclear Information System (INIS)

    Park, Jong Hark; Chae, H. T.; Park, C.; Kim, H.

    2006-12-01

    A test facility had been established for the experiment of velocity distribution and pressure drop in a tubular fuel. A basic test had been conducted to examine the performance of the test loop and to verify the accuracy of measurement by pitot-tube. In this report, test results and CFD analysis for the hydraulic characteristics of a tubular fuel, following the previous tests, are described. Coolant velocities in all channels were measured using pitot-tube and the effect of flow rate change on the velocity distribution was also examined. The pressure drop through the tubular fuel was measured for various flow rates in range of 1 kg/s to 21 kg/s to obtain a correlation of pressure drop with variation of flow rate. In addition, a CFD(Computational Fluid Dynamics) analysis was also done to find out the hydraulic characteristics of tubular fuel such as velocity distribution and pressure drop. As the results of CFD analysis can give us a detail insight on coolant flow in the tubular fuel, the CFD method is a very useful tool to understand the flow structure and phenomena induced by fluid flow. The CFX-10, a commercial CFD code, was used in this study. The two results by the experiment and the CFD analysis were investigated and compared with each other. Overall trend of velocity distribution by CFD analysis was somewhat different from that of experiment, but it would be reasonable considering measurement uncertainties. The CFD prediction for pressure drop of a tubular fuel shows a tolerably good agreement with experiment within 8% difference

  15. XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5 mol% H 2/Ar) atmosphere

    Science.gov (United States)

    Achiwawanich, S.; James, B. D.; Liesegang, J.

    2008-12-01

    Surface effects on Mong Hsu rubies and Kanchanaburi sapphires after heat treatment in a controlled reducing atmosphere (5 mol% H 2/Ar) have been investigated using advanced surface science techniques including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Visual appearance of the gemstones is clearly affected by the heat treatment in a reducing atmosphere. Kanchanaburi sapphires, in particular, exhibit Fe-containing precipitates after the heat treatment which have not been observed in previous studies under an inert atmosphere. Significant correlation between changes in visual appearance of the gemstones and variations in surface concentration of trace elements, especially Ti and Fe are observed. The XPS and ToF-SIMS results suggest that; (1) a reducing atmosphere affects the oxidation state of Fe; (2) dissociation of Fe-Ti interaction may occur during heat treatment.

  16. XPS and ToF-SIMS analysis of natural rubies and sapphires heat-treated in a reducing (5 mol% H{sub 2}/Ar) atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Achiwawanich, S. [Department of Physics, La Trobe University, VIC 3086 (Australia); Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia); James, B.D. [Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia); Department of Chemistry, La Trobe University, VIC 3086 (Australia); Liesegang, J. [Department of Physics, La Trobe University, VIC 3086 (Australia); Centre for Materials and Surface Science, La Trobe University, VIC 3086 (Australia)], E-mail: J.Liesegang@latrobe.edu.au

    2008-12-30

    Surface effects on Mong Hsu rubies and Kanchanaburi sapphires after heat treatment in a controlled reducing atmosphere (5 mol% H{sub 2}/Ar) have been investigated using advanced surface science techniques including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Visual appearance of the gemstones is clearly affected by the heat treatment in a reducing atmosphere. Kanchanaburi sapphires, in particular, exhibit Fe-containing precipitates after the heat treatment which have not been observed in previous studies under an inert atmosphere. Significant correlation between changes in visual appearance of the gemstones and variations in surface concentration of trace elements, especially Ti and Fe are observed. The XPS and ToF-SIMS results suggest that; (1) a reducing atmosphere affects the oxidation state of Fe; (2) dissociation of Fe-Ti interaction may occur during heat treatment.

  17. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

    Science.gov (United States)

    Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

    2018-01-01

    The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

  18. Characteristics associated with being overweight among the population of Ukraine, results of 2000 survey

    Directory of Open Access Journals (Sweden)

    Chagarna, Natalia

    2011-05-01

    Full Text Available BACKGROUND. Being overweight is considered among major risk factors of chronic non-communicable diseases. The goal of this study was to investigate main determinants associated with being overweight and obese among the population of Ukraine in transitional period.METHODS. Data from the survey “Health and Well-being in the Transitions” (2000 were used. Body mass index (BMI was used to estimate the level of overweight. Binary dependent variable was computed by setting BMI of 25 as the borderline between normal weight and overweight. Risk of being overweight was compared by educational groups, demographic characteristics, occupation, level of physical activity, and behavioral and eating habits, after adjustment for age and stratification by gender.RESULTS. Among men, those overweight were less likely to smoke (adjusted odds ratio 2,5, while more likely to eat meat more often (AOR=2,3 and to consume more vegetable oil. However, among women being overweight was associated with eating more potatoes (AOR = 0,4 and with frequent vodka intake (AOR = 1,7. Those women who drank beer were less likely to be overweight (AOR = 0,3. Risk of being overweight was related to occupation: those unemployed, housekeepers, and self-employed people were less likely to be overweight than those employed with salaries. Obesity risk was greater in those older than 30. Education and physical activity did not show significant associations with risk of being overweight.CONCLUSION. Eating habits, occupational status, and unhealthy habits were associated with obesity among men and women in different ways. Age was found to be an important factor of being overweight both for males and females. Some of the associated characteristics may be considered causes of being overweight and the others as consequences.

  19. Characteristics of Antimicrobial Stewardship Programs at Veterans Affairs Hospitals: Results of a Nationwide Survey.

    Science.gov (United States)

    Chou, Ann F; Graber, Christopher J; Jones, Makoto; Zhang, Yue; Goetz, Matthew Bidwell; Madaras-Kelly, Karl; Samore, Matthew; Kelly, Allison; Glassman, Peter A

    2016-06-01

    BACKGROUND Antimicrobial stewardship programs (ASPs) are variably implemented. OBJECTIVE To characterize variations of antimicrobial stewardship structure and practices across all inpatient Veterans Affairs facilities in 2012 and correlate key characteristics with antimicrobial usage. DESIGN A web-based survey regarding stewardship activities was administered to each facility's designated contact. Bivariate associations between facility characteristics and inpatient antimicrobial use during 2012 were determined. SETTING Total of 130 Veterans Affairs facilities with inpatient services. RESULTS Of 130 responding facilities, 29 (22%) had a formal policy establishing an ASP, and 12 (9%) had an approved ASP business plan. Antimicrobial stewardship teams were present in 49 facilities (38%); 34 teams included a clinical pharmacist with formal infectious diseases (ID) training. Stewardship activities varied across facilities, including development of yearly antibiograms (122 [94%]), formulary restrictions (120 [92%]), stop orders for antimicrobial duration (98 [75%]), and written clinical pathways for specific conditions (96 [74%]). Decreased antimicrobial usage was associated with having at least 1 full-time ID physician (P=.03), an ID fellowship program (P=.003), and a clinical pharmacist with formal ID training (P=.006) as well as frequency of systematic patient-level reviews of antimicrobial use (P=.01) and having a policy to address antimicrobial use in the context of Clostridium difficile infection (P=.01). Stop orders for antimicrobial duration were associated with increased use (P=.03). CONCLUSIONS ASP-related activities varied considerably. Decreased antibiotic use appeared related to ID presence and certain select practices. Further statistical assessments may help optimize antimicrobial practices. Infect Control Hosp Epidemiol 2016;37:647-654.

  20. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yuan, Shu; Liu, Yingce [Quantum Wafer Inc., Foshan 528251 (China); Guo, L. Jay [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Sheng, E-mail: victor_liu63@126.com [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); Ding, Han [State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-15

    Graphical abstract: - Highlights: • TEM is used to characterize threading dislocation existing in GaN epitaxial layer. • Effect of threading dislocation on optical and electrical of LEDs is discussed. • Strip-shaped SiO{sub 2} DCBL is designed to improve current spreading performance of LEDs. - Abstract: We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO{sub 2} distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO{sub 2} DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO{sub 2} DCBL, light output power of high power PSS-LED chip could be further increased by 13%.

  1. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  2. 5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

    Science.gov (United States)

    Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

    2018-05-01

    We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

  3. PISC II: Parametric studies. Effect of defect characteristics on immersion focusing probe testing results

    International Nuclear Information System (INIS)

    Dombret, P.

    1989-09-01

    The results of the Round-Robin trials conducted under the PISC I exercise (1976-1980) showed large discrepancies in the defect detection and sizing capability among different flaws. To identify the causes of such dispersions and quantify the effects, a Parametric Study was included in the PISC II project, taking into consideration most characteristics of planar flaws. A number of steel specimens containing various artificial defects was made available for the measurements. The defects were ultrasonically scanned by standard methods and by some advanced techniques the high performance of which had been established in the PISC Round-Robin Tests. This report deals with the beam focusing technique: 2 MHz 45 0 shear wave transducers have been used in immersion to collect the signals generated by the reference reflectors. The results show that the depth and the size of a defect do not affect significantly its detection and sizing, provided that the natural variation of sensitivity and of beam diameter along the propagation axis is taken into account. On the other hand, parameters such as the orientation and the roughness modify the conditions of impact and interference of the acoustic beam with the defect surface, and therefore strongly influence the energy partition in diffracted and specularly reflected rays. As an example, sharp smooth defects insonified under an angle of 45 0 return to the transducer signals approximately 10 times smaller than the ASME code calibration level

  4. Clinical Characteristics and Results of Laser Peripheral Iridotomy of Pigment Dispersion Syndrome

    Directory of Open Access Journals (Sweden)

    Şerife Bayraktar

    2017-12-01

    Full Text Available Aims: To report the clinical findings, characteristics and the results of peripheral laser iridotomy in pigment dispersion syndrome (PDS patients.Methods: Medical records of 30 patients who had been diagnosed with PDS were evaluated retrospectively at Glaucoma Department of Istanbul Faculty of Medicine at Istanbul University.Results: Sixty eyes of these 30 patients enrolled in the study. 18 of them (60% were male and 12 (40% were female with mean age of 42.4 ±12.3 years (range: 22 to 73 years. Forty-six eyes of the 23 patients had myopia, 12 eyes of 6 patients had hyperopia, 2 eyes of 1 patient had emmetropia. All patients except 2 eyes of the 1 patient had (96.6% Krukenberg spindles. Homogeneous trabecular meshwork(TM pigmentation was seen in all patients. Thirty-two eyes of 17 patients (53.3 % had iris transillumination defects. Neodymium:yttrium–aluminum–garnet (Nd:YAG peripheral laser iridotomy was performed in 44 eyes of 60 eyes (73.3%.Conclusion: The most common clinical findings in Turkish PDS patients were Krukenberg spindles and homogeneous TM pigmentation. If PDS hasn’t advanced in pigmentary ocular hypertension or pigmentary glaucoma, progression can be stabilized by laser iridotomy and medical treatment.

  5. Semipolar GaN grown on m-plane sapphire using MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

    2008-07-01

    We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Use of sapphire as a neutron damage monitor for pressure vessel steels

    International Nuclear Information System (INIS)

    Pells, G.P.; Fudge, A.J.; Murphy, M.J.; Watt, S.

    1989-01-01

    Single crystal α-Al 2 O 3 (sapphire) has been neutron irradiated over a range of dose, dose rate and neutron energy spectra at temperatures from 60 to 310 0 C. Values of optical absorption at 400 nm, the peak of the aluminum vacancy absorption band, were plotted against damage dose expressed in terms of dpa of Al in sapphire obtained from measurements of induced radio-activity in activation foils irradiated with the sapphires and from calculation of the neutron energy spectrum at the irradiation position. The neutron energy spectrum was calculated using modern neutron transport computer codes and adjusted in the light of measurements obtained from multiple foil activation experiments. A simple response curve was obtained for all sapphires irradiated at temperatures between 220 to 310 0 C and for sapphires irradiated below 200 0 C which had been annealed at 290 0 C irrespective of dose rate or neutron beam energy spectrum. The single response curve for irradiations performed in a variety of neutron energy spectra validate the neutron energy spectrum computational procedures

  7. Acoustic mismatch model and thermal phonon radiation across a tin/sapphire interface with radiation temperatures between 1.6 and 3.7 K

    International Nuclear Information System (INIS)

    Bayrle, R.; Weis, O.

    1989-01-01

    Using a special sandwich arrangement consisting of a constantan film, an insulating oxide layer and a superconducting tin-tunnel junction evaporated on an a-cut sapphire, the temperature jump between tin and sapphire has been measured as function of thermal phonon flux under steady-state and transient conditions using rectangular current pulses in the constantan heater. The tunnel junction serves as a very fast thermometer with a time resolution in the nanosecond range. During the steady-state and the heatup interval, full agreement is found between experimental results, and the predictions of the acoustic mismatch model applied to the phonon transfer across the tin/sapphire interface and under the additional assumption that thermal equilibrium exists between electrons and phonons (one-temperature model). In contrast, very strong deviations are found during the cooling process which starts immediately after the end of the heating pulses. This observed nonequilibrium between electron and phonon system is discussed in more detail in a subsequent paper

  8. Characteristics of Bone Injuries Resulting from Knife Wounds Incised with Different Forces.

    Science.gov (United States)

    Humphrey, Caitlin; Kumaratilake, Jaliya; Henneberg, Maciej

    2017-11-01

    The aim of this research was to experimentally determine the characteristics of incised bone wounds, which are commonly found in defense injuries. A specially constructed pivoting arm device was used to inflict wounds with controlled forces and direction. Five knives were selected to inflict the wounds on porcine forelimbs. Eight incised wounds were made per knife per force. A larger knife and a greater force caused longer and wider bone wounds. Comparisons of individual knives at the two forces produced varying results in the bone wounds. A correlation was seen between the force and the length (r = 0.69), width (r = 0.63), and depth (r = 0.57) of bone wounds. Serrated-edge and nonserrated knives can be distinguished from the appearance of the wound. The outcomes may be applicable in forensic investigations to ascertain the forces associated with incised wounds and identify the specific knife used. © 2017 American Academy of Forensic Sciences.

  9. Experimental results obtained with the simulated cold moderator system. System characteristics and technical issues

    CERN Document Server

    Aso, T; Hino, R; Kaminaga, M; Kinoshita, H; Takahashi, T

    2002-01-01

    The Japan Atomic Energy Research Institute and the High Energy Accelerator Research Organization have been developing a Mega-Watt scale spallation target system. In the system, neutrons generated in a target are sorted out their energy to the proper values in liquid-hydrogen moderators. Then, the liquid-hydrogen is forced to circulate in order to suppress hydrogen temperature increase. In the operation of moderators, it is very important to establish a safety protection system against emergency shutdown of the accelerator or accidents of the cold moderator system. In order to obtain a technical data for design and safety review of the liquid-hydrogen system, we have fabricated an experimental apparatus simulated the cold moderator system using liquid nitrogen (max. 1.5 MPa, mini. 77 K) instead of liquid hydrogen. The experiments on a controllability of the system were carried out to investigate dynamic characteristics of the system. This report presents the experimental results and technical issues for the co...

  10. Experimental results obtained with the simulated cold moderator system. System characteristics and technical issues

    Energy Technology Data Exchange (ETDEWEB)

    Aso, Tomokazu; Kaminaga, Masanori; Haga, Katsuhiro; Kinoshita, Hidetaka; Takahashi, Toshio; Hino, Ryutaro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    2002-12-01

    The Japan Atomic Energy Research Institute and the High Energy Accelerator Research Organization have been developing a Mega-Watt scale spallation target system. In the system, neutrons generated in a target are sorted out their energy to the proper values in liquid-hydrogen moderators. Then, the liquid-hydrogen is forced to circulate in order to suppress hydrogen temperature increase. In the operation of moderators, it is very important to establish a safety protection system against emergency shutdown of the accelerator or accidents of the cold moderator system. In order to obtain a technical data for design and safety review of the liquid-hydrogen system, we have fabricated an experimental apparatus simulated the cold moderator system using liquid nitrogen (max. 1.5 MPa, mini. 77 K) instead of liquid hydrogen. The experiments on a controllability of the system were carried out to investigate dynamic characteristics of the system. This report presents the experimental results and technical issues for the construction of a practical liquid-hydrogen moderator system of the Mega-Watt scale target system. (author)

  11. Characteristics of activated carbon resulted from pyrolysis of the oil palm fronds powder

    Science.gov (United States)

    Maulina, S.; Iriansyah, M.

    2018-02-01

    Activated carbon is the product of a charcoal impregnation process that has a higher absorption capacity and has more benefits than regular char. Therefore, this study aims to cultivate the powder of oil palm fronds into activated carbon that meets the requirements of Standard National Indonesia 06-3730-1995. To do so, the carbonization process of the powder of oil palm fronds was carried out using a pyrolysis reactor for 30 minutes at a temperature of 150 °C, 200 °C, and 250 °C in order to produce activated char. Then, the char was impregnated using Phosphoric Acid activator (H3PO4) for 24 hours. Characteristics of activated carbon indicate that the treatment of char by chemical activation of oil palm fronds powder has an effect on the properties of activated carbon. The activated carbons that has the highest absorption properties to Iodine (822.91 mg/g) were obtained from the impregnation process with 15% concentration of Phosphoric Acid (H3PO4) at pyrolysis temperature of 200 °C. Furthermore, the activation process resulted in activated carbon with water content of 8%, ash content of 4%, volatile matter 39%, and fixed carbon 75%, Iodine number 822.91 mg/g.

  12. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  13. Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

    Science.gov (United States)

    Wang, Rongrong; Guo, Dan; Xie, Guoxin; Pan, Guoshun

    2016-01-01

    Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanoribbons. However, very limited attention has been paid to the step formation in manufacturing process. In the present work, investigations have been conducted into this step formation mechanism on the sapphire c (0001) surface by using both experiments and simulations. The step evolutions at different stages in the polishing process were investigated with atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). The simulation of idealized steps was constructed theoretically on the basis of experimental results. It was found that (1) the subtle atomic structures (e.g., steps with different sawteeth, as well as steps with straight and zigzag edges), (2) the periodicity and (3) the degree of order of the steps were all dependent on surface composition and miscut direction (step edge direction). A comparison between experimental results and idealized step models of different surface compositions has been made. It has been found that the structure on the polished surface was in accordance with some surface compositions (the model of single-atom steps: Al steps or O steps). PMID:27444267

  14. Clinical characteristics and treatment results of large cell lung cancer-62 case report

    International Nuclear Information System (INIS)

    Chen Dongfu; Ou Guangfei; Cheng Guiyu; Zhou Zongmei; Zhao Lujun; Wang Lvhua

    2004-01-01

    Objective: Objective To evaluate the clinical characteristics and treatment results of 60 patients with large cell lung cancer (LCLC). Methods: All sixty-two patients were diagnosed histopathologically with 5 in stage I, 13 in stage II, 30 in stage III and 14 in stage IV. Forty-five patients received primary surgical resection with 38 radical resection and 7 palliative resection. Non-surgical treatment was given to 17 patients. Mediastinum and ipsilateral hilum were treated to the total dose of 40-60 Gy in 4-6 weeks in 16 patients as postoperative adjuvant radiotherapy. For patients treated by radiation alone, the primary tumor bed, bilateral mediastinum and ipsilateral hilum were treated to the total dose of 36-70 Gy in 4-7 weeks. Results: The overall 1-, 3- and 5- year survival rates were 25.7%, 15.4% and 11.6%, respectively with the median survival time of 11.6 months. In the radically resected patients, the 1-, 3- and 5-year survival rates and the median survival time were 51.3%, 24.7%, 24.7% and 13 months, compared to those of 0%, 0%, 0% and 2 months in the palliatively resected group. In non-surgical treatment group, the 1-, 3- and 5-year survival rates and the median survival time were 41.2%, 21.2%, 7.0% and 11 months, respectively. Conclusions: The prognosis of large cell lung cancer is poor due to high distant metastasis rate. The long-term survival rate after radical resection is worse than the other lung cancers, but similar to the non-surgical treatment. (authors)

  15. Characteristics of Programs for Children with Deaf-Blindness: Results of a National Survey.

    Science.gov (United States)

    Bullis, Michael; Otos, Maurine

    1988-01-01

    A national survey of state coordinators of specialized service programs for children with deaf-blindness examined program characteristics including administrative structure, teacher certification requirements, technical assistance, eligibility determination, educational placement, curricula/instructional settings, transition, and unmet educational…

  16. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2018-05-01

    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

  17. (211) oriented ZnTe growth on m-plane sapphire by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

    2013-11-15

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Contribution to the microwave characterisation of superconductive materials by means of sapphire resonators

    International Nuclear Information System (INIS)

    Hanus, Xavier

    1993-01-01

    The objective of this research thesis is to find a compact resonant structure which would allow the residual surface impedance of superconductive samples to be simply, quickly and economically characterised. The author first explains why he decided to use a sapphire single-crystal as inner dielectric, given some performance reached by resonant structures equipped with such inner dielectrics, and given constraints adopted from the start. He explains the origin of microwave losses which appear in this type of resonant structure, i.e. respectively the surface impedance as far as metallic losses are concerned, and the sapphire dielectric loss angle for as far as dielectric losses are concerned. The experimental installation and the principle of microwave measurements are described. The performance of different possible solutions of resonant structures from starting criteria is presented. The solution of the cavity-sapphire with a TE 011 resonant mode is derived [fr

  19. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  20. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  1. Patients with schizophrenia or schizoaffective disorder who receive multiple electroconvulsive therapy sessions: characteristics, indications, and results.

    Science.gov (United States)

    Iancu, Iulian; Pick, Nimrod; Seener-Lorsh, Orit; Dannon, Pinhas

    2015-01-01

    While electroconvulsive therapy (ECT) has been used for many years, there is insufficient research regarding the indications for continuation/maintenance (C/M)-ECT, its safety and efficacy, and the characteristics of patients with schizophrenia or schizoaffective disorder who receive multiple ECT sessions. The aims of this study were to characterize a series of patients who received 30 ECT sessions or more, to describe treatment regimens in actual practice, and to examine the results of C/M-ECT in terms of safety and efficacy, especially the effect on aggression and functioning. We performed a retrospective chart review of 20 consecutive patients (mean age 64.6 years) with schizophrenia (n=16) or schizoaffective disorder (n=4) who received at least 30 ECT sessions at our ECT unit, and also interviewed the treating physician and filled out the Clinical Global Impression-Severity, Global Assessment of Functioning, and the Staff Observation Aggression Scale-Revised. Patients received a mean of 91.3 ECT sessions at a mean interval of 2.6 weeks. All had been hospitalized for most or all of the previous 3 years. There were no major adverse effects, and cognitive side effects were relatively minimal (cognitive deficit present for several hours after treatment). We found that ECT significantly reduced scores on the Staff Observation Aggression Scale-Revised subscales for verbal aggression and self-harm, and improved Global Assessment of Functioning scores. There were reductions in total aggression scores, subscale scores for harm to objects and to others, and Clinical Global Impression-Severity scores, these were not statistically significant. C/M-ECT is safe and effective for chronically hospitalized patients. It improves general functioning and reduces verbal aggression and self-harm. More research using other aggression tools is needed to determine its effects and to reproduce our findings in prospective and controlled studies.

  2. Solid state dewetting and stress relaxation in a thin single crystalline Ni film on sapphire

    International Nuclear Information System (INIS)

    Rabkin, E.; Amram, D.; Alster, E.

    2014-01-01

    In this study, we deposited a 80 nm thick single crystalline Ni film on a sapphire substrate. Heat treatment of this film at 1000 °C followed by slow cooling resulted in the formation of faceted holes, star-like channel instabilities and faceted microwires. The ridges at the rims of faceted holes and channels exhibited a twinning orientation relationship with the rest of the film. A sub-nanometer-high hexagonal topography pattern on the surface of the unperturbed film was observed by atomic force microscopy. No such pattern was observed on the top facets of isolated Ni particles and hole ridges. We discuss the observed dewetting patterns in terms of the effects of Ni surface anisotropy and faceting on solid state dewetting. The hexagonal pattern on the surface of the unperturbed film was attributed to thermal stress relaxation in the film via dislocations glide. This work demonstrates that solid state dewetting of single crystalline metal films can be utilized for film patterning and for producing hierarchical surface topographies

  3. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    Science.gov (United States)

    Ueno, Kohei; Kishikawa, Eiji; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-02-01

    High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101 ¯ 2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6 μ m . Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016-2 × 1018 cm-3 and 2-9 cm2V-1s-1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  4. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-02-01

    Full Text Available High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001 via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  5. Critical thickness for Nb nanofilm on sapphire substrate: a critical analysis using finite element method

    International Nuclear Information System (INIS)

    Kumar, Arun; Subramaniam, Anandh

    2009-01-01

    Full text: On growth beyond critical thickness, interfacial misfit dislocations partially relax the misfit strains, in epitaxially grown nanofilms. In this study the stress state and growth of nanofilms is simulated using Finite Element Method (FEM); by imposing stress-free strains, corresponding to the lattice mismatch between Nb nanofilm and Sapphire substrate. On growth of the Nb nanofilm, a triangular network of edge misfit dislocations nucleates at the (0001) Al2ο3 || (111) Nb , interface. Using a combined simulation of a coherently strained nanofilm and an edge dislocation, the equilibrium criterion for the nucleation of an edge dislocation is determined. Theoretical analyses in literature use only the component of the Burger's vector parallel to the interface, which is an erroneous description of the stress state and energetics of the system. In this investigation the full interfacial edge dislocation is simulated using standard commercially available software and comparisons are made with results available in literature to bring out the utility of the methodology

  6. Neutron irradiation of sapphire for compressive strengthening. II. Physical properties changes

    Energy Technology Data Exchange (ETDEWEB)

    Regan, Thomas M. E-mail: thomas_regan@uml.edu; Harris, Daniel C. E-mail: harrisdc@navair.navy.mil; Blodgett, David W.; Baldwin, Kevin C.; Miragliotta, Joseph A.; Thomas, Michael E.; Linevsky, Milton J.; Giles, John W.; Kennedy, Thomas A.; Fatemi, Mohammad; Black, David R.; Lagerloef, K. Peter D

    2002-01-01

    Irradiation of sapphire with fast neutrons (0.8-10 MeV) at a fluence of 10{sup 22}/m{sup 2} increased the c-axis compressive strength and the c-plane biaxial flexure strength at 600 deg. C by a factor of {approx}2.5. Both effects are attributed to inhibition of r-plane twin propagation by damage clusters resulting from neutron impact. The a-plane biaxial flexure strength and four-point flexure strength in the c- and m-directions decreased by 10-23% at 600 deg. C after neutron irradiation. Neutron irradiation had little or no effect on thermal conductivity, infrared absorption, elastic constants, hardness, and fracture toughness. A featureless electron paramagnetic resonance signal at g=2.02 was correlated with the strength increase: This signal grew in amplitude with increasing neutron irradiation, which also increased the compressive strength. Annealing conditions that reversed the strengthening also annihilated the g=2.02 signal. A signal associated with a paramagnetic center containing two Al nuclei was not correlated with strength. Ultraviolet and visible color centers also were not correlated with strength in that they could be removed by annealing at temperatures that were too low to reverse the compressive strengthening effect of neutron irradiation.

  7. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

    DEFF Research Database (Denmark)

    König, Karsten; Andersen, Peter E.; Le, Tuan

    2015-01-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...... imaging capability using different biological samples, i.e. cell monolayers, corneal tissue, and human skin. With the novel laser, the realization of very compact Ti:sapphire-based systems for high-quality multiphoton imaging at a significantly size and weight compared to current systems will become...

  8. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  9. Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects

    Science.gov (United States)

    Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

    2018-02-01

    Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.

  10. Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

    International Nuclear Information System (INIS)

    Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

    2011-01-01

    Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

  11. Description of selected characteristics of familial glioma patients – Results from the Gliogene Consortium

    DEFF Research Database (Denmark)

    Sadetzki, Siegal; Bruchim, Revital; Oberman, Bernice

    2013-01-01

    While certain inherited syndromes (e.g. Neurofibromatosis or Li-Fraumeni) are associated with an increased risk of glioma, most familial gliomas are non-syndromic. This study describes the demographic and clinical characteristics of the largest series of non-syndromic glioma families ascertained ...

  12. Phenolic composition and mouthfeel characteristics resulting from blending Chilean red wines.

    Science.gov (United States)

    Cáceres-Mella, Alejandro; Peña-Neira, Alvaro; Avilés-Gálvez, Pamela; Medel-Marabolí, Marcela; Del Barrio-Galán, Rubén; López-Solís, Remigio; Canals, Joan Miquel

    2014-03-15

    The blending of wine is a common practice in winemaking to improve certain characteristics that are appreciated by consumers. The use of some cultivars may contribute phenolic compounds that modify certain characteristics in blended wines, particularly those related to mouthfeel. The aim of this work was to study the effect of Carménère, Merlot and Cabernet Franc on the phenolic composition, proanthocyanidin profile and mouthfeel characteristics of Cabernet Sauvignon blends. Significant differences in chemical composition were observed among the monovarietal wines. Separation using Sep-Pak C₁₈ cartridges revealed differences in the concentration but not in the proportion of various proanthocyanidins. Blending reduced polyphenol concentration differences among the various monovarietal wines. Although no major overall differences were observed after blending the monovarietal wines, this oenological practice produced clear differences in mouthfeel characteristics in such a way that the quality of the perceived astringency was different. This study showed that the use of a particular wine variety (Cabernet Sauvignon) in a higher proportion in wine blending produced blends that were less differentiable from the monovarietal wine, owing to a suppression effect, producing an apparent standardization of the wines regarding chemical composition. © 2013 Society of Chemical Industry.

  13. Results of Laboratory Tests of the Filtration Characteristics of Clay-Cement Concrete

    Energy Technology Data Exchange (ETDEWEB)

    Sol’skii, S. V., E-mail: solskiysv@vniig.ru; Lopatina, M. G., E-mail: LoptainaMG@vniig.ru; Legina, E. E.; Orishchuk, R. N.; Orlova, N. L. [B. E. Vedeneev All-Russia Research Institute of Hydraulic Engineering (VNIIG) (Russian Federation)

    2017-01-15

    Laboratory studies of the filtration characteristics of clay-cement concrete materials for constructing filtering diaphragms of earth dams by the method of secant piles are reported. Areas for further study aimed at improving the quality of construction, increasing operational safety, and developing a standards base for the design, construction, and operation of these systems are discussed.

  14. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Fang-Wei [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

    2016-07-01

    Highlights: • Nanoscale patterned sapphire substrate was prepared by anodic-aluminum-oxide etching mask. • Influence of aspect ratio of NPSS on structural and electrical properties of GaN films was studied. • Low dislocation density and high carrier mobility of GaN films were grown on high aspect ratio NPSS. - Abstract: This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 10{sup 8} cm{sup −2} for GaN on bare sapphire to 4.9 × 10{sup 8} cm{sup −2} for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm{sup 2}/Vs for GaN on bare sapphire to 199 cm{sup 2}/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with

  15. Neighborhood characteristics and lifestyle intervention outcomes: Results from the Special Diabetes Program for Indians.

    Science.gov (United States)

    Jiang, Luohua; Chang, Jenny; Beals, Janette; Bullock, Ann; Manson, Spero M

    2018-06-01

    Growing evidence reveals various neighborhood conditions are associated with the risk of developing type 2 diabetes. It is unknown, however, whether the effectiveness of diabetes prevention interventions is also influenced by neighborhood characteristics. The purpose of the current study is to examine the impact of neighborhood characteristics on the outcomes of a lifestyle intervention to prevent diabetes in American Indians and Alaska Natives (AI/ANs). Year 2000 US Census Tract data were linked with those from the Special Diabetes Program for Indians Diabetes Prevention Program (SDPI-DP), an evidence-based lifestyle intervention implemented in 36 AI/AN grantee sites across the US. A total of 3394 participants started the intervention between 01/01/2006 and 07/31/2009 and were followed by 07/31/2016. In 2016-2017, data analyses were conducted to evaluate the relationships of neighborhood characteristics with intervention outcomes, controlling for individual level socioeconomic status. AI/ANs from sites located in neighborhoods with higher median household income had 38% lower risk of developing diabetes than those from sites with lower neighborhood income (adjusted hazard ratio = 0.65, 95% CI: 0.47-0.90). Further, those from sites with higher neighborhood concentrations of AI/ANs achieved less BMI reduction and physical activity increase. Meanwhile, participants from sites with higher neighborhood level of vehicle occupancy made more improvement in BMI and diet. Lifestyle intervention effectiveness was not optimal when the intervention was implemented at sites with disadvantaged neighborhood characteristics. Meaningful improvements in socioeconomic and other neighborhood disadvantages of vulnerable populations could be important in stemming the global epidemic of diabetes. Copyright © 2018 Elsevier Inc. All rights reserved.

  16. Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

    Science.gov (United States)

    Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

    2016-05-01

    The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS

  17. "You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

    Science.gov (United States)

    Pappas, Christine

    2007-01-01

    Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

  18. Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

    Science.gov (United States)

    Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

    2012-05-21

    Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

  19. Secondary electron emission of sapphire tungsten molybdenum and titanium for Maxwellian incident electrons

    International Nuclear Information System (INIS)

    Saussez-Hublet, M.-C.; Harbour, P.J.

    1980-06-01

    The second electron emission coefficient of various materials, namely titanium, molybdenum, tungsten and sapphire, has been calculated for a Maxwellian energy distribution from data for a normally incident monoenergetic beam of primary electrons. The most significant difference from the monoenergetic case occurs at low energies. In addition the influence of the incident angle of the electrons is discussed. (author)

  20. Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

    Science.gov (United States)

    Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

    2017-09-01

    Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

  1. Erbium medium temperature localised doping into lithium niobate and sapphire: A comparative study

    Czech Academy of Sciences Publication Activity Database

    Nekvindová, P.; Macková, Anna; Peřina, Vratislav; Červená, Jarmila; Čapek, P.; Schrofel, J.; Špirková, J.; Oswald, Jiří

    90-91, - (2003), s. 559-564 ISSN 1012-0394 Institutional research plan: CEZ:AV0Z1048901 Keywords : lithium niobate * sapphire * erbium Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.687, year: 2003

  2. Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

    International Nuclear Information System (INIS)

    Vetrov, V. N.; Ignatenkov, B. A.

    2013-01-01

    The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

  3. Clinical characteristics associated with Borrelia burgdorferi sensu lato skin culture results in patients with erythema migrans.

    Directory of Open Access Journals (Sweden)

    Franc Strle

    Full Text Available Clinical characteristics associated with isolation of Borrelia burgdorferi sensu lato from skin have not been fully evaluated. To gain insight into predictors for a positive EM skin culture, we compared basic demographic, epidemiologic, and clinical data in 608 culture-proven and 501 culture-negative adult patients with solitary EM. A positive Borrelia spp. skin culture was associated with older age, a time interval of >2 days between tick bite and onset of the skin lesion, EM ≥ 5 cm in diameter, and location of the lesion on the extremities, whereas several other characteristics used as clinical case definition criteria for the diagnosis of EM (such as tick bite at the site of later EM, information on expansion of the skin lesion, central clearing were not. A patient with a 15-cm EM lesion had almost 3-fold greater odds for a positive skin culture than patients with a 5-cm lesion. Patients with a free time interval between the tick bite and onset of EM had the same probability of a positive skin culture as those who did not recall a tick bite (OR=1.02; however, the two groups had >3-fold greater odds for EM positivity than patients who reported a tick bite with no interval between the bite and onset of the lesion. In conclusion, several yet not all clinical characteristics used in EM case definitions were associated with positive Borrelia spp. skin culture. The findings are limited to European patients with solitary EM caused predominantly by B. afzelii but may not be valid for other situations.

  4. Analytical results of variance reduction characteristics of biased Monte Carlo for deep-penetration problems

    International Nuclear Information System (INIS)

    Murthy, K.P.N.; Indira, R.

    1986-01-01

    An analytical formulation is presented for calculating the mean and variance of transmission for a model deep-penetration problem. With this formulation, the variance reduction characteristics of two biased Monte Carlo schemes are studied. The first is the usual exponential biasing wherein it is shown that the optimal biasing parameter depends sensitively on the scattering properties of the shielding medium. The second is a scheme that couples exponential biasing to the scattering angle biasing proposed recently. It is demonstrated that the coupled scheme performs better than exponential biasing

  5. The water kefir grain inoculum determines the characteristics of the resulting water kefir fermentation process.

    Science.gov (United States)

    Laureys, D; De Vuyst, L

    2017-03-01

    To investigate the influence of the water kefir grain inoculum on the characteristics of the water kefir fermentation process. Three water kefir fermentation processes were started with different water kefir grain inocula and followed as a function of time regarding microbial species diversity, community dynamics, substrate consumption profile and metabolite production course. The inoculum determined the water kefir grain growth, the viable counts on the grains, the time until total carbohydrate exhaustion, the final metabolite concentrations and the microbial species diversity. There were always 2-10 lactic acid bacterial cells for every yeast cell and the majority of these micro-organisms was always present on the grains. Lactobacillus paracasei, Lactobacillus hilgardii, Lactobacillus nagelii and Saccharomyces cerevisiae were always present and may be the key micro-organisms during water kefir fermentation. Low water kefir grain growth was associated with small grains with high viable counts of micro-organisms, fast fermentation and low pH values, and was not caused by the absence of exopolysaccharide-producing lactic acid bacteria. The water kefir grain inoculum influences the microbial species diversity and characteristics of the fermentation process. A select group of key micro-organisms was always present during fermentation. This study allows a rational selection of a water kefir grain inoculum. © 2016 The Society for Applied Microbiology.

  6. Test results of the SMES model coil. Cool-down and thermal characteristics

    International Nuclear Information System (INIS)

    Hamada, Kazuya; Kato, Takashi; Kawano, Katsumi

    1998-01-01

    A model coil of a superconducting magnetic energy storage (SMES) device, which is a forced-cooled Nb-Ti coil, has been fabricated and a performance test at cryogenic temperatures has been carried out. The SMES model coil is composed of 4 dual pancakes and its total weight is 4.5 t. The applied conductors are cable-in-conduit conductors cooled by supercritical helium (SHe) at 4.5 K and 0.7 MPa. SHe is supplied to the SMES model coil and the structure by a reciprocating bellows pump. The test facility is located at the International Thermonuclear Experimental Reactor (ITER) common test facility, was constructed for the testing of an ITER central solenoid model coil. In the experiments, cool-down was finished within 10 days under controlled temperature differences in the SMES model coil. During cool-down and 4.5 K operation, pressure drop characteristics of the conductor were measured and the friction factor estimated. The pressure drop characteristics of the SMES model coil were in good agreement with those of the previous cable-in-conduit conductor. During static operation without current, the heat load and refrigerator operation conditions were measured. The heat load of the SMES model coil is 7.5 W, which is within the expected value. (author)

  7. Characteristics of prescribers whose patients shop for opioids: results from a cohort study.

    Science.gov (United States)

    Cepeda, M Soledad; Fife, Daniel; Berlin, Jesse A; Mastrogiovanni, Gregory; Yuan, Yingli

    2012-01-01

    Little is known about the prevalence of opioid shoppers in clinical practices and the relation between prescriber characteristics and the risk of having opioid shoppers. Describe the prevalence of opioid shoppers in prescribers' practices. Assess the relation between prescribers' characteristics and patient opioid shopping behavior. Retrospective cohort study using a large US retail prescription database. Patients with ≥1 opioid dispensing were followed 18 months. These patients' prescribers are the focus of the study. A patient was a "shopper" if he or she had opioid prescriptions written by ≥1 prescriber with ≥1 day of overlap filled at ≥3 pharmacies and a "heavy shopper" if he or she had ≥5 shopping episodes. The proportions of shoppers by prescriber and the proportion of prescribers with ≥1 shopper or heavy shopper were calculated. Among 858,290 opioid prescribers, most (87 percent) had no shoppers and 98 percent had no heavy shoppers. Prescribers who were aged 70-79 years, male, or who prescribed schedule II opioids had an increased likelihood of having shoppers. As the number of patients for whom a prescriber prescribed opioids increased, the proportion of shoppers also increased. Prescribers with 66 or more patients receiving opioids, who represented 25 percent of prescribers, prescribed for 82 percent of all shoppers. The great majority of opioid prescribers appear to have no shoppers in their practice. Any educational program will be more cost effective if targeted to prescribers of schedule II opioids with a large volume of patients requiring opioids.

  8. Determination of the mechanical characteristics of irradiated metals from the results of microhardness tests

    International Nuclear Information System (INIS)

    Hofman, A.

    1999-01-01

    To predict the possibilities of using structural materials in nuclear and thermonuclear reactors, it is important to have data on changes of the mechanical characteristics and irradiation obtained from full-scale or simulation tests. Materials are irradiated in nuclear reactors with fast neutrons, the sources of high-energy neutrons with an energy of 14 MeV and the accelerators of charged particles. The restricted volumes for irradiation of these specimens in the systems and also the need to test large numbers of specimens under the same conditions make it necessary to reduce the size of irradiated specimens. To solve this problem, work is being carried out to develop various methods of testing miniature specimens, including tension extrusion of disc-shaped micro-specimens, microhardness, and the Charpy Method. In examination of the irradiation hardening of the materials, the main advantage of the microhardness method is that it makes it possible to examine small specimens. In single microhardness tests, only a small area of the irradiated specimens is examined. This makes it possible to increase the radiation dose and carry out subsequent tests of microhardness on the same specimens. The aim of this work was to determine the possibilities of using the microhardness measurement method for evaluating the mechanical characteristics of metallic materials. The comparison of the data, obtained in microhardness tests and in tensile loading specimens of 0Kh18N10Tsteel, irradiated with neutrons, shows the efficiency of the microhardness method as a tool for investigating the irradiation hardening of reactor materials

  9. The Epidemiological Characteristics of Hepatitis B in Croatia: The Results of the Prevention.

    Science.gov (United States)

    Kljajić, Zlatko; Petricević, Josko; Poljak, Nikola Kolja; Pranić, Shelly; Mulić, Rosanda

    2015-09-01

    This study shows epidemiological characteristics and preventive measures implemented for the prevention and control of hepatitis B infections in Croatia. We analyzed the data from obligatory infectious disease reports and notifications of death due to infectious diseases, data on the hepatitis B infections in Croatia, and data collected by survey of the population. The average prevalence of the disease is 3.67 per 100,000 annually. All age groups are affected, but still a higher rate of the disease is found in the age groups from 15-19 and 20-29 years of age. Hepatitis B disease is 1.4 times more likely in men than in women. For the past 18 years, the average rate of mortality was 0.2%. The incidence of HbsAg-positive donors of blood is within the range of 0.65% in 1992 to 0.012% in 2011. The largest part of preventive measures implemented in Croatia against hepatitis B is predicted and required by legislation. The registrations of acute and chronic carriers of the virus are obligatory. High-risk groups have started being vaccinated since 1992. The obligatory vaccination of infants was introduced in the mandatory vaccination program in 2007. Routine testing of blood exclusively from voluntary donors for HbsAg presence is obligatory. The non-governmental organization "Help" created for intravenous drug users, along with the "Harm reduction" program implemented hepatitis B, C, and HIV/AIDS prevention program in 1995. In order to gain a better understanding of epidemiological characteristics of hepatitis B in Croatia, the specifics of its dynamics in small communities are required since the research of Croatian public health officials and researchers have shown that hepatitis B is spread in different ways.

  10. Indian egg donors’ characteristics, motivations and feelings towards the recipient and resultant child

    Directory of Open Access Journals (Sweden)

    V. Jadva

    2015-12-01

    Full Text Available This is the first study to examine characteristics, motivations and experiences of Indian egg donors. In-depth interviews were conducted with 25 egg donors who had donated during the previous 8 months at a fertility clinic in Mumbai. The semi-structured interviews were conducted in Hindi and English. In addition to demographic information, data were collected on donors’ motivations for donating, with whom they had discussed donation, and feelings towards the recipients. The response rate was 66%. All participants were literate and had attended school. Twenty (80% egg donors had children and five (20% did not. The most common motivation (19, 76% for donating was financial need. Egg donors had discussed their donation with their husband or with close family/friends, with almost all mentioning that wider society would disapprove. The majority (20, 80% had no information about the recipients and 11 (44% preferred not to. The findings highlight the similarities and differences between egg donors from India and those from other countries and that egg donors are of a more varied demographic background than surrogates in India. Given that India has been a popular destination for fertility treatment, the findings have important implications for regulation and practice within India and internationally.

  11. Indian egg donors' characteristics, motivations and feelings towards the recipient and resultant child.

    Science.gov (United States)

    Jadva, V; Lamba, N; Kadam, K; Golombok, S

    2015-12-01

    This is the first study to examine characteristics, motivations and experiences of Indian egg donors. In-depth interviews were conducted with 25 egg donors who had donated during the previous 8 months at a fertility clinic in Mumbai. The semi-structured interviews were conducted in Hindi and English. In addition to demographic information, data were collected on donors' motivations for donating, with whom they had discussed donation, and feelings towards the recipients. The response rate was 66%. All participants were literate and had attended school. Twenty (80%) egg donors had children and five (20%) did not. The most common motivation (19, 76%) for donating was financial need. Egg donors had discussed their donation with their husband or with close family/friends, with almost all mentioning that wider society would disapprove. The majority (20, 80%) had no information about the recipients and 11 (44%) preferred not to. The findings highlight the similarities and differences between egg donors from India and those from other countries and that egg donors are of a more varied demographic background than surrogates in India. Given that India has been a popular destination for fertility treatment, the findings have important implications for regulation and practice within India and internationally.

  12. Characteristics of airborne micro-organisms in a neurological intensive care unit: Results from China.

    Science.gov (United States)

    Yu, Yao; Yin, Sufeng; Kuan, Yi; Xu, Yingjun; Gao, Xuguang

    2015-06-01

    To describe the characteristics of airborne micro-organisms in the environment in a Chinese neurological intensive care unit (NICU). This prospective study monitored the air environment in two wards (large and small) of an NICU in a tertiary hospital in China for 12 months, using an LWC-1 centrifugal air sampler. Airborne micro-organisms were identified using standard microbiology techniques. The mean ± SD number of airborne bacteria was significantly higher in the large ward than in the small ward (200 ± 51 colony-forming units [CFU]/m(3) versus 110 ± 40 CFU/m(3), respectively). In the large ward only, the mean number of airborne bacteria in the autumn was significantly higher than in any of the other three seasons. A total of 279 airborne micro-organisms were identified (large ward: 195; small ward: 84). There was no significant difference in the type and distribution of airborne micro-organisms between the large and small wards. The majority of airborne micro-organisms were Gram-positive cocci in both wards. These findings suggest that the number of airborne micro-organisms was related to the number of patients on the NICU ward. © The Author(s) 2015 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

  13. Effect of season on characteristics of pecorino cheese and ricotta of Pistoiese Appennine: first results

    Directory of Open Access Journals (Sweden)

    L. Giustini

    2010-04-01

    Full Text Available The “Pecorino pistoiese” is made from milk of Massese Sheep. The flocks are reared by grazing on natural pastures of Pistoiese Appennine. The farms product cheeses by milk without pasteurization. The handmade cheeses are characterized by a remarkable variability due to farm and to season. The aim of this work is to study the effect of season on characteristics of the pecorino e ricotta pistoiese with particular attention for the determination of the yield. One trial was run in each season (4 trials and in 3 farms. Every phases of the cheesemaking were controlled and milk, cheese and ricotta were weighed and analysed. The season showed some significant effects on the chemical composition of milk: lactose and SNF showed lower values in summer. The pecorino cheese showed 18.5% of fat and 24.7% of protein on average. In spring and in summer the yield in pecorino cheese (15.8% was significantly worse than in winter (19.3%. The ricotta cheese was fatter in summer (27.6% than in winter (17.5%. The yield of ricotta at 24 hours was 13.5% on average.

  14. The growth and characterization of well aligned RuO2 nanorods on sapphire substrates

    International Nuclear Information System (INIS)

    Chen, C C; Chen, R S; Tsai, T Y; Huang, Y S; Tsai, D S; Tiong, K K

    2004-01-01

    Self-assembled and well aligned RuO 2 nanorods (NRs) have been grown on sapphire (SA) substrates via metal-organic chemical vapour deposition (MOCVD), using bis(ethylcyclopentadienyl)ruthenium as the source reagent. The surface morphology, structural, and spectroscopic properties of the as-deposited NRs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAD), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned nanorods (NRs) were grown on SA(100), while the NRs on the SA(012) were grown with a tilt angle of ∼ 35 degrees from the normal to the substrates. TEM and SAD measurements showed that the RuO 2 NRs with square cross-section have the long axis directed along the [001] direction. The XRD results indicate that the RuO 2 NRs are (002) oriented on SA(100) and (101) oriented on SA(012) substrates. A strong substrate effect on the alignment of the RuO 2 NRs growth has been demonstrated and the probable mechanism for the formation of these NRs has been discussed. XP spectra show the coexistence of higher oxidation state of ruthenium in the as-grown RuO 2 NRs. Micro-Raman spectra show the red-shift and peak broadening of the RuO 2 signatures with respect to that of the bulk counterpart which may be indicative of a phonon confinement effect for these NRs

  15. Analysis of characteristics associated with reinjection of icatibant: Results from the icatibant outcome survey.

    Science.gov (United States)

    Longhurst, Hilary J; Aberer, Werner; Bouillet, Laurence; Caballero, Teresa; Fabien, Vincent; Zanichelli, Andrea; Maurer, Marcus

    2015-01-01

    Phase 3 icatibant trials showed that most hereditary angioedema (HAE) (C1 inhibitor deficiency) acute attacks were treated successfully with one injection of icatibant, a selective bradykinin B2 receptor antagonist. We conducted a post hoc analysis of icatibant reinjection for HAE type I and II attacks in a real-world setting by using data from the Icatibant Outcome Survey, an ongoing observational study that monitors the safety and effectiveness of icatibant treatment. Descriptive retrospective analyses of icatibant reinjection were performed on Icatibant Outcome Survey data (February 2008 to December 2012). New attacks were defined as the onset of new symptoms after full resolution of the previous attack. Potential associations between the patient and attack characteristics and reinjection were explored by using logistic regression analysis. Icatibant was administered for 652 attacks in 170 patients with HAE type I or II. Most attacks (89.1%) were treated with a single icatibant injection. For attacks that required two or three injections, the second injection was given a median of 11.0 hours after the first injection, with 90.4% of second injections administered ≥6 hours after the first injection. Time to resolution and attack duration were significantly longer for two or three injections versus one icatibant injection (p < 0.0001 and p < 0.05, respectively). Multivariate logistic regression analysis identified sex, attack severity, and laryngeal attacks as significantly correlated with reinjection (all p ≤ 0.05). These factors did not remain predictors for reinjection when two outlier patients with distinct patterns of icatibant use were excluded. In this real-world setting, most HAE attacks resolved with one icatibant injection. There was no distinct profile for patients or attacks that required reinjection when outliers with substantially different patterns of use were excluded. Because new attacks were not distinguished from the recurrence of symptoms

  16. Fabrication of Ternary AgPdAu Alloy Nanoparticles on c-Plane Sapphire by the Systematical Control of Film Thickness and Deposition Sequence

    Science.gov (United States)

    Kunwar, Sundar; Pandey, Puran; Sui, Mao; Bastola, Sushil; Lee, Jihoon

    2018-06-01

    In this work, a systematic study on the fabrication of ternary AgPdAu alloy nanoparticles (NPs) on c-plane sapphire (0001) is presented and the corresponding structural and optical characteristics are demonstrated. The metallic trilayers of various thicknesses and deposition orders are annealed in a controlled manner (400 °C to 900 °C) to induce the solid-state dewetting that yields the various structural configurations of AgPdAu alloy NPs. The dewetting of relatively thicker trilayers (15 nm) is gradually progressed with void nucleation, growth, and coalescence, isolated NP formation, and shape transformation, along with the temperature control. For 6 nm thickness, owing to the sufficient dewetting of trilayers along with enhanced diffusion, dense and small spherical alloy NPs are fabricated. Depending on the specific growth condition, the surface diffusion and interdiffusion of metal atoms, surface and interface energy minimization, Rayleigh instability, and equilibrium configuration are correlated to describe the fabrication of ternary alloy NPs. Ternary alloy NPs exhibit morphology-dependent ultraviolet-visible-near infrared (UV-VIS-NIR) reflectance properties such as the inverse relationship of average reflectance with the surface coverage, absorption enhancement in specific regions, and reflectance maxima in UV and NIR regions. In addition, Raman spectra depict the six active phonon modes of sapphires and their intensity and position modulation by the alloy NPs.

  17. Performance characteristics and radiation damage results from the Fermilab E706 silicon microstrip detector system

    Energy Technology Data Exchange (ETDEWEB)

    Engels, E Jr; Mani, S; Orris, D; Shepard, P F; Weerasundara, P D; Choudhary, B C; Joshi, U; Kapoor, V; Shivpuri, R; Baker, W

    1989-07-01

    A charged particle spectrometer containing a 7120-channel silicon microstrip detector system, one component of Fermilab experiment E706 to study direct photon production in hadron-hadron collisions, was utilized in a run in which 6 million events were recorded. We describe the silicon system, provide early results of track and vertex reconstruction, and present data on the radiation damage to the silicon wafers resulting from the narrow high intensity beam. (orig.).

  18. Characteristic-Based, Task-Based, and Results-Based: Three Value Systems for Assessing Professionally Produced Technical Communication Products.

    Science.gov (United States)

    Carliner, Saul

    2003-01-01

    Notes that technical communicators have developed different methodologies for evaluating the effectiveness of their work, such as editing, usability testing, and determining the value added. Explains that at least three broad value systems underlie the assessment practices: characteristic-based, task-based, and results-based. Concludes that the…

  19. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    Science.gov (United States)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  20. Analyses of hydrogen in quartz and in sapphire using depth profiling by ERDA at atmospheric pressure: Comparison with resonant NRA and SIMS

    International Nuclear Information System (INIS)

    Reiche, Ina; Castaing, Jacques; Calligaro, Thomas; Salomon, Joseph; Aucouturier, Marc; Reinholz, Uwe; Weise, Hans-Peter

    2006-01-01

    Hydrogen is present in anhydrous materials as a result of their synthesis and of their environment during conservation. IBA provides techniques to measure H concentration depth profiles allowing to identify various aspects of the materials including the history of objects such as gemstones used in cultural heritage. A newly established ERDA set-up, using an external microbeam of alpha particles, has been developed to study hydrated near-surface layers in quartz and sapphire by non-destructive H depth profiling in different atmospheres. The samples were also analysed using resonant NRA and SIMS

  1. Analyses of hydrogen in quartz and in sapphire using depth profiling by ERDA at atmospheric pressure: Comparison with resonant NRA and SIMS

    Energy Technology Data Exchange (ETDEWEB)

    Reiche, Ina [Laboratoire du Centre de recherche et de restauration des musees de France (C2RMF), UMR 171 CNRS, 14 quai Francois Mitterrand, 75001 Paris (France); Castaing, Jacques [Laboratoire du Centre de recherche et de restauration des musees de France (C2RMF), UMR 171 CNRS, 14 quai Francois Mitterrand, 75001 Paris (France)]. E-mail: jacques.castaing@culture.fr; Calligaro, Thomas [Laboratoire du Centre de recherche et de restauration des musees de France (C2RMF), UMR 171 CNRS, 14 quai Francois Mitterrand, 75001 Paris (France); Salomon, Joseph [Laboratoire du Centre de recherche et de restauration des musees de France (C2RMF), UMR 171 CNRS, 14 quai Francois Mitterrand, 75001 Paris (France); Aucouturier, Marc [Laboratoire du Centre de recherche et de restauration des musees de France (C2RMF), UMR 171 CNRS, 14 quai Francois Mitterrand, 75001 Paris (France); Reinholz, Uwe [Federal Institute for Materials Research and Testing (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Weise, Hans-Peter [Federal Institute for Materials Research and Testing (BAM), Unter den Eichen 87, 12205 Berlin (Germany)

    2006-08-15

    Hydrogen is present in anhydrous materials as a result of their synthesis and of their environment during conservation. IBA provides techniques to measure H concentration depth profiles allowing to identify various aspects of the materials including the history of objects such as gemstones used in cultural heritage. A newly established ERDA set-up, using an external microbeam of alpha particles, has been developed to study hydrated near-surface layers in quartz and sapphire by non-destructive H depth profiling in different atmospheres. The samples were also analysed using resonant NRA and SIMS.

  2. In vitro Evaluation of Effect of Dental Bleaching on the Shear Bond Strength of Sapphire Orthodontics Brackets Bonded with Resin Modified Glass Ionomer Cement

    Directory of Open Access Journals (Sweden)

    Zainab M Kadhom

    2017-11-01

    Full Text Available Aim: This study aimed to assess the effect of various types of bleaching agents on the shear bond strength of sapphire brackets bonded to human maxillary premolar teeth using resin modified glass ionomer cement (RMGIC and to determine the site of bond failure. Materials and Methods: Thirty freshly extracted maxillary human premolars were selected and assigned into three equal groups, ten teeth in each. The first group was the control (unbleached group; the second group comprised teeth bleached with hydrogen peroxide group (HP 37.5% (in-office bleaching while the third group included teeth bleached with carbamide peroxide group (CP 16% (at-home bleaching. The teeth in the experimental groups were bleached and stored in water one day then bonded with sapphire brackets using RMGIC with the control group and left another day. De-bonding was performed using Instron universal testing machine. To determine the site of bond failure, both the enamel surface and bracket base of each tooth were examined under magnifying lens (20X of a stereomicroscope. Results: Results showed statistically highly significant difference in the shear bond strengths between control group and both of bleaching groups being low in the control group. Score III was the predominant site of bond failure in all groups. Conclusions: RMGIC provides adequate bond strength when bonding the sapphire brackets to bleached enamel; this bonding was strong enough to resist both the mechanical and masticatory forces. Most of the adhesive remained on the brackets, so it reduced the time required for removal of the bonding material’s remnants during enamel finishing and polishing.

  3. Kinematic Characteristics of Meteor Showers by Results of the Combined Radio-Television Observations

    Science.gov (United States)

    Narziev, Mirhusen

    2016-07-01

    One of the most important tasks of meteor astronomy is the study of the distribution of meteoroid matter in the solar system. The most important component to address this issue presents the results of measurements of the velocities, radiants, and orbits of both showers and sporadic meteors. Radiant's and orbits of meteors for different sets of data obtained as a result of photographic, television, electro-optical, video, Fireball Network and radar observations have been measured repeatedly. However, radiants, velocities and orbits of shower meteors based on the results of combined radar-optical observations have not been sufficiently studied. In this paper, we present a methods for computing the radiants, velocities, and orbits of the combined radar-TV meteor observations carried out at HisAO in 1978-1980. As a result of the two-year cycle of simultaneous TV-radar observations 57 simultaneous meteors have been identified. Analysis of the TV images has shown that some meteor trails appeared as dashed lines. Among the simultaneous meteors of d-Aquariids 10 produced such dashed images, and among the Perseids there were only 7. Using a known method, for such fragmented images of simultaneous meteors - together with the measured radar distance, trace length, and time interval between the segments - allowed to determine meteor velocity using combined method. In addition, velocity of the same meteors was measured using diffraction and radar range-time methods based on the results of radar observation. It has been determined that the mean values of meteoroid velocity based on the combined radar-TV observations are greater in 1 ÷ 3 km / c than the averaged velocity values measured using only radar methods. Orbits of the simultaneously observed meteors with segmented photographic images were calculated on the basis of the average velocity observed using the combined radar-TV method. The measured results of radiants velocities and orbital elements of individual meteors

  4. Photosensitive N channel MOSFET device on silicon on sapphire substrate

    International Nuclear Information System (INIS)

    Le Goascoz, V.; Borel, J.

    1975-01-01

    An anomalous behavior of the N channel output current characteristic in a SOS MOSFET with a floating bulk is described. Such a phenomenon can be used in a photosensitive device with internal gain. Such devices can be used on SOS substrates to achieve integrated circuits with high insulating voltages and data transmission by optical means [fr

  5. Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

    2017-11-01

    The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

  6. Cytogenetic characteristics of children who suffered as a result of the Chernobyl power plant accident

    International Nuclear Information System (INIS)

    Vorobtsova, I.E.; Kolyubaeva, S.N.; Vorob'eva, M.V.; Korotkov, D.V.; Komar, V.E.

    1993-01-01

    Cytogenetic examinations of children living in the St. Peterburg district who suffered as a result of the Chernobyl power plant accident (liquidators' children and children evacuated from radioactive pollution areas) and of control children were carried out. The chromosomal system stability was assessed by several parameters: spontaneous levels of chromosomal radiosensitivity in in vitro irradiation of lymphocytes in dose 1.5 Gy of 60 Co γ-irradiation. Children with an increased incidence of chromosomal aberrations and an increased chromosomal radiosensitivity were referred to a risk group

  7. Development of Cr,Nd:GSGG laser as a pumping source of Ti:sapphire laser

    International Nuclear Information System (INIS)

    Tamura, Koji; Arisawa, Takashi

    1999-08-01

    Since efficiency of Cr,Nd doped gadolinium scandium gallium garnet (GSGG) laser is in principle higher than that of Nd:YAG laser, it can be a highly efficient pumping source for Ti:sapphire laser. We have made GSGG laser, and measured its oscillation properties. It was two times more efficient than Nd:YAG laser at free running mode operation. At Q-switched mode operation, fundamental output of 50 mJ and second harmonics output of 8 mJ were obtained. The developed laser had appropriate spatial profile, temporal duration, long time stability for solid laser pumping. Ti:sapphire laser oscillation was achieved by the second harmonics of GSGG laser. (author)

  8. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  9. Growth of cubic InN on r-plane sapphire

    International Nuclear Information System (INIS)

    Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

    2003-01-01

    InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

  10. Detection of solar neutrinos with a torsion balance with sapphire crystal

    Science.gov (United States)

    Cruceru, M.; Nicolescu, G.

    2018-01-01

    The solar neutrinos (antineutrinos) are detected with a dedicated torsion balance in the case when they interact coherently on stiff crystals (sapphire with high Debye temperature ∼1000K and lead with ∼100K Debye temperature). The balance consists in two equal masses of lead and sapphire, of 25g. An autocollimator coupled to this balance measures small rotation angles of the balance. The force with which neutrino flux interacts with these crystals is between 10-5 dyn and 10-8 dyn, comparable with that reported in Weber’s experiments [1]. A diurnal effect is observed for solar neutrinos due to the rotation of the Earth around its own axes. The solar neutrino flux obtained at the site of our experiment is ∼3.8*1010neutrinos/cm2*s [2]. Experimental data for neutrinos signals from this high sensitivity torsion balance are presented and commented [3].

  11. Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

    Directory of Open Access Journals (Sweden)

    Jaeyeong Lee

    2017-12-01

    Full Text Available The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages.

  12. Gold wetting effects on sapphire irradiated with GeV uranium ions

    International Nuclear Information System (INIS)

    Ramos, S.M.M.

    1997-01-01

    Single crystals of α-Al 2 O 3 were irradiated with 238 U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of ∼80 K, with fluences ranging from 1.2 x 10 12 to 2.5 x 10 12 ions cm -2 . After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.)

  13. Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

    Science.gov (United States)

    Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

    2018-01-01

    The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

  14. Microbiological characteristics of poultry meats - Results of inspections carried out in the province of Milano, Italy

    Directory of Open Access Journals (Sweden)

    Guido Grilli

    2010-01-01

    Full Text Available Examinations were conducted in terms of microbiological quality/quantity (TMC, Coliforms, E. coli, S. aureus, Sulphate-reducing Clostridia, B. cereus, Salmonella spp. and Lysteria spp. and Campylobacter spp. on 240 poultry meat samples (chicken, turkey and quail acquired pursuant to the standards set by the Regional Plan of programming and coordination in the field of operations concerning official inspections of Lombardia animal origin and by a few private companies for self-inspection. The TMC was consistently low and in line with reports in the literature, as was the case with coliforms, E. coli, S. aureus, sulphatereducing Clostrides and B. cereus. In the case of Salmonella spp., only 5 samples tested positive: one for S. typhimurium and one for S. enteritidis (chicken; only one sample from turkey tested positive for S. blokley, and two out of five samples analysed from quail tested positive result for S. typhimurium. About 3% of the samples analyzed tested positive for Listeria monocitogenes, but they were within the legal limits. Research on Campylobacter thermophiles has involved only 50 samples, of which only 5 have tested positive. These results confirm the high quality of hygiene and cleanliness of poultry meat, in accordance with that reported in the national literature and with respect to EU norms.

  15. Low velocity gunshot wounds result in significant contamination regardless of ballistic characteristics.

    Science.gov (United States)

    Weinstein, Joseph; Putney, Emily; Egol, Kenneth

    2014-01-01

    Controversy exists among the orthopedic community regarding the treatment of gunshot injuries. No consistent treatment algorithm exists for treatment of low energy gunshot wound (GSW) trauma. The purpose of this study was to critically examine the wound contamination following low velocity GSW based upon bullet caliber and clothing fiber type found within the injury track. Four types of handguns were fired at ballistic gel from a 10-foot distance. Various clothing materials were applied (denim, cotton, polyester, and wool) circumferentially around the tissue agar in a loose manor. A total of 32 specimens were examined. Each caliber handgun was fired a minimum of 5 times into a gel. Regardless of bullet caliber there was gross contamination of the entire bullet track in 100% of specimens in all scenarios and for all fiber types. Furthermore, as would be expected, the degree of contamination appeared to increase as the size of the bullet increased. Low velocity GSWs result in significant contamination regardless of bullet caliber and jacket type. Based upon our results further investigation of low velocity GSW tracks is warranted. Further clinical investigation should focus on the degree to which debridement should be undertaken.

  16. Characteristics of the development of the radiological situation resulting from the accident, intervention levels and countermeasures

    International Nuclear Information System (INIS)

    Belyaev, S.T.; Demin, V.F.; Kutkov, V.A.; Bariakhtar, V.G.; Petriaev, E.P.

    1996-01-01

    Great efforts have been made in the frame of the national and international research programs to get complete data on the radioactive releases, environmental contamination and radiological situation resulted from the Chernobyl accident. Beginning from the first publication (IAEA meeting, August 1986) these data have been considerably improved and added. The most important change of them with their influence on the decision making in the mitigation activity and the current situation is described and analyzed. The national and international regulatory documents at the moment of the accident were neither complete nor perfect in some necessary aspects especially in respect to the countermeasures at the intermediate and long-term phases. New documents have been worked out during the intervention activity. From 1986 series of documents were developed on the national and international levels. These documents are considered and analyzed in the context of their practical implementation and by the modern experience and research results. The history of countermeasures adopted on the different intervention phases are described. These documents mainly establish intervention levels in terms of averted doses and regulate only radiation protection. They don't content any intervention levels in terms of residual doses and risk, which are necessary for regulation of social and health protection of population suffered from the accident. Other restriction for the optimal regulation comes from use of the effective dose for establishing intervention levels. These and other respective aspects are discussed

  17. Migration characteristics and early clinical results of the NANOS® short-stem hip arthroplasty.

    Science.gov (United States)

    Kaipel, Martin; Grabowiecki, Phillip; Sinz, Katrina; Farr, Sebastian; Sinz, Günter

    2015-05-01

    Femoral short stems promise essential advantages in total hip arthroplasty. Up to now, only short- and midterm clinical studies exist. Data on early stem migration that could predict later aseptic loosening at an early stage are rare. The purpose of this study was to assess migration patterns and clinical outcome 2 years after hip replacement by a metaphyseal anchored cementless short stem. Migration data and clinical results were prospectively assessed in 49 patients. Clinical outcome was measured using the Harris Hip Score (HHS). Migration analyses were performed using the computer-assisted Einzel-Bild-Roentgen-Analyse (EBRA) system. At 2 years after surgery, none of the implants needed revision, and HHS increased from 47.9 up to 98.1. Of 49 patients, 5 (10%) showed increased vertical stem migration (1.5 mm/2a) that might predict late aseptic loosening. Of 49 stems, 44 (90%) showed stable migration patterns indicating a beneficial long-term outcome. Results of this study confirm the excellent clinical data of previous works. Migration patterns strongly suggest that short-stem arthroplasty is not only an innovative but also a reliable strategy in total hip replacement.

  18. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  19. Preliminary results of characteristic seismic anisotropy beneath Sunda-Banda subduction-collision zone

    Energy Technology Data Exchange (ETDEWEB)

    Wiyono, Samsul H., E-mail: samsul.wiyono@bmkg.go.id [Study Program of Earth Sciences, Faculty of Earth Sciences and Technology, Institute of Technology Bandung, Bandung 40132 (Indonesia); Indonesia’s Agency for Meteorology Climatology and Geophysics, Jakarta 10610 (Indonesia); Nugraha, Andri Dian, E-mail: nugraha@gf.itb.ac.id [Indonesia’s Agency for Meteorology Climatology and Geophysics, Jakarta 10610 (Indonesia); Global Geophysics Research Group, Faculty of Mining and Petroleum Engineering, Institute of Technology Bandung, Bandung 40132, Indonesia, Phone: +62-22 2534137 (Indonesia)

    2015-04-24

    Determining of seismic anisotropy allowed us for understanding the deformation processes that occured in the past and present. In this study, we performed shear wave splitting to characterize seismic anisotropy beneath Sunda-Banda subduction-collision zone. For about 1,610 XKS waveforms from INATEWS-BMKG networks have been analyzed. From its measurements showed that fast polarization direction is consistent with trench-perpendicular orientation but several stations presented different orientation. We also compared between fast polarization direction with absolute plate motion in the no net rotation and hotspot frame. Its result showed that both absolute plate motion frame had strong correlation with fast polarization direction. Strong correlation between the fast polarization direction and the absolute plate motion can be interpreted as the possibility of dominant anisotropy is in the asthenosphere.

  20. Visuospatial characteristics of an elderly Chinese population: results from the WAIS-R block design test.

    Science.gov (United States)

    Yin, Shufei; Zhu, Xinyi; Huang, Xin; Li, Juan

    2015-01-01

    Visuospatial deficits have long been recognized as a potential predictor of dementia, with visuospatial ability decline having been found to accelerate in later stages of dementia. We, therefore, believe that the visuospatial performance of patients with mild cognitive impairment (MCI) and dementia (Dem) might change with varying visuospatial task difficulties. This study administered the Wechsler Adult Intelligence Scale-Revised (WAIS-R) Block Design Test (BDT) to determine whether visuospatial ability can help discriminate between MCI patients from Dem patients and normal controls (NC). Results showed that the BDT could contribute to the discrimination between MCI and Dem. Specifically, simple BDT task scores could best distinguish MCI from Dem patients, while difficult BDT task scores could contribute to discriminating between MCI and NC. Given the potential clinical value of the BDT in the diagnosis of Dem and MCI, normative data stratified by age and education for the Chinese elderly population are presented for use in research and clinical settings.

  1. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors a...... as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate....

  2. A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

    Science.gov (United States)

    Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

    2001-01-01

    A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

  3. Second Breakdown Susceptibility of Silicon-On-Sapphire Diodes having Systematically Different Geometries.

    Science.gov (United States)

    1980-05-30

    Sunshine’s experiments less enlight - ening than they might otherwise have been. First, changes in optical transmittance could not be correlated directly to...silicon- on-sapphire technology ) and the orientation of the silicon surface ex- posed to the oxide layer44 ,46 ,4 7,51. Not enough data were taken to at...success. With rapid progress of semi- conductor technology , such simplified and largely intuitive methods proved to be inadequate for dealing with

  4. Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

    Science.gov (United States)

    Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

    2018-01-01

    An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

  5. Deliberation of arc plasma characteristics according to experimental results in a typical gas circuit-breaker

    International Nuclear Information System (INIS)

    Borghei, M.

    2005-01-01

    One of the industrial plasma applications is in the gas circuit breakers (GCB) and switching processes. During GCB operation and opening of its two contacts, current flows through of the inter-electrode medium (generally SF 6 or its mixture) and electric arc forms from the plasma that has been created between the contacts. The electric arc is a self-sustained discharge having low voltage drop and able to support great amplitudes of current. The technical basis of circuit breaker is: initiating arc plasma, flowing a large current, cooling it effectively to avoid re-ignition, and finally the transition from a well-conducting medium into insulating gas space in a very short time interval. In other words, for a successful interruption we need to know about power brought to the arc and that of removed. In this paper an attempt has been made to study, characterize and understand some arc behaviors such as arc conductance and its changes according to recorded current and voltage traces experimentally. From physical point of view, there are different phenomena that affect on arc behavior. According to methodology used here, we tried to understand some of arc behavior from experimental results and finally we extract some arc parameters. (author)

  6. On hybridising lettuce seedlings with nanoparticles and the resultant effects on the organisms' electrical characteristics.

    Science.gov (United States)

    Gizzie, Nina; Mayne, Richard; Patton, David; Kendrick, Paul; Adamatzky, Andrew

    2016-09-01

    Lettuce seedlings are attracting interest in the computing world due to their capacity to become hybrid circuit components, more specifically, in the creation of living 'wires'. Previous studies have shown that seedlings can be hybridised with gold nanoparticles and withstand mild electrical currents. In this study, lettuce seedlings were hybridised with a variety of metallic and non-metallic nanomaterials: carbon nanotubes, graphene oxide, aluminium oxide and calcium phosphate. Toxic effects and the following electrical properties were monitored: mean potential, resistance and capacitance. Macroscopic observations revealed only slight deleterious health effects after administration with one variety of particle, aluminium oxide. Mean potential in calcium phosphate-hybridised seedlings showed a considerable increase when compared with the control, whereas those administered with graphene oxide showed a small decrease; there were no notable variations across the remaining treatments. Electrical resistance decreased substantially in graphene oxide-treated seedlings whereas slight increases were shown following calcium phosphate and carbon nanotubes applications. Capacitance showed no considerable variation across treated seedlings. These results demonstrate that use of some nanomaterials, specifically graphene oxide and calcium phosphate, may be towards biohybridisation purposes including the generation of living 'wires'. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  7. Radiation impact on the characteristics of optical glasses test results on a selected set of materials

    Science.gov (United States)

    Fruit, Michel; Gussarov, Andrei; Berghmans, Francis; Doyle, Dominic; Ulbrich, Gerd

    2017-11-01

    It is well known within the Space optics community that radiation may significantly affect transmittance of glasses. To overcome this drawback, glass manufacturers have developed Cerium doped counterparts of classical glasses. This doped glasses display much less transmittance sensitivity to radiation. Still, the impact of radiation on refractive index is less known and may affect indifferently classical or Cerium doped glasses. ESTEC has initialised an R&D program with the aim of establishing a comprehensive data base gathering radiation sensitivity data, called Dose coefficients, for all the glass optical parameters (transmittance / refractive index / compaction……). The first part of this study, to define the methodology for such a data base, is run by ASTRIUM SAS in co-operation with SCK CEN. This covers theoretical studies associated to testing of a selected set of classical and "radiation hardened" glasses. It is proposed here to present first the theoretical backgrounds of this study and then to give results which have been obtained so far.

  8. [Therapeutic characteristance and tolerance of topical comfrey preparations. Results of an observational study of patients].

    Science.gov (United States)

    Koll, R; Klingenburg, S

    2002-01-01

    To analyze the anti-inflammatory and analgetic properties of the topical comfrey, preparations Kytta-Salbe f, Kytta-Plasma f and Kytta-Balsam f applied to bruises, sprains and distortions and painful conditions of the muscles and joints. A prospective open multicentric observational study complying with paragraph 67(6) of the AMG and involving 162 general practitioners. During the two-week period of observation, the patients received an average of one to three applications of the comfrey preparation per day. All 492 questionnaires were evaluated. Efficacy and tolerability were assessed by both physician and patient. Pain at rest and on movement, as also tenderness, improved in the overall observation group by an average of 45-47%. The duration of morning joint stiffness decreased from 20 minutes initially to 3 minutes. During the course of treatment with comfrey, more than two-thirds of the patients were able to reduce or even discontinue their intake of non-steroidal anti-inflammatory drugs and other specific concomitant medication. In most of the cases, both effectiveness and tolerability were assessed to be excellent or good. The results of the study confirm the effectiveness and tolerability of the topical comfrey preparation investigated in the treatment of bruises, sprains and distortions as well as painful conditions affecting muscles and joints.

  9. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  10. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-01-01

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  11. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  12. Study of sapphire probe tip wear when scanning on different materials

    International Nuclear Information System (INIS)

    Nicolet, Anaïs; Küng, Alain; Meli, Felix

    2012-01-01

    The accuracy of today's coordinate measuring machines (CMM) has reached a level at which exact knowledge of each component is required. The role of the probe tip is particularly crucial as it is in contact with the sample surface. Understanding how the probe tip wears off will help to narrow the measurement errors. In this work, wear of a sapphire sphere was studied for different scanning conditions and with different sample materials. Wear depth on the probe was investigated using an automated process in situ on the METAS micro-CMM and completed by measurements with an atomic force microscope. We often found a linear dependence between the wear depth and the scan length ranging from 0.5 to 9 nm m −1 , due to variations in scan speed, contact force or sample material. In the case of steel, the wear rate is proportional to the scan speed, while for aluminum several processes seem to interact. A large amount of debris was visible after the tests. Except for aluminum, wear was visible only on the sphere and not on the sample. Sapphire/steel is the worst combination in terms of wear, whereas the combination sapphire/ceramic exhibits almost no wear. (paper)

  13. [The Danish debate on priority setting in medicine - characteristics and results].

    Science.gov (United States)

    Pornak, S; Meyer, T; Raspe, H

    2011-10-01

    Priority setting in medicine helps to achieve a fair and transparent distribution of health-care resources. The German discussion about priority setting is still in its infancy and may benefit from other countries' experiences. This paper aims to analyse the Danish priority setting debate in order to stimulate the German discussion. The methods used are a literature analysis and a document analysis as well as expert interviews. The Danish debate about priority setting in medicine began in the 1970s, when a government committee was constituted to evaluate health-care priorities at the national level. In the 1980s a broader debate arose in politics, ethics, medicine and health economy. The discussions reached a climax in the 1990s, when many local activities - always involving the public - were initiated. Some Danish counties tried to implement priority setting in the daily routine of health care. The Council of Ethics was a major player in the debate of the 1990s and published a detailed statement on priority setting in 1996. With the new century the debate about priority setting seemed to have come to an end, but in 2006 the Technology Council and the Danish Regions resumed the discussion. In 2009 the Medical Association called for a broad debate in order to achieve equity among all patients. The long lasting Danish debate on priority setting has entailed only very little practical consequences on health care. The main problems seem to have been the missing effort to bundle the various local initiatives on a national level and the lack of powerful players to put results of the discussion into practice. Nevertheless, today the attitude towards priority setting is predominantly positive and even politicians talk freely about it. © Georg Thieme Verlag KG Stuttgart · New York.

  14. The magnetic field investigation on the ARASE (ERG) mission: Data characteristics and initial scientific results

    Science.gov (United States)

    Matsuoka, A.; Teramoto, M.; Nomura, R.; Nose, M.; Fujimoto, A.; Tanaka, Y.; Shinohara, M.; Nagatsuma, T.; Shiokawa, K.; Obana, Y.; Miyoshi, Y.; Takashima, T.; Shinohara, I.

    2017-12-01

    The ARASE (ERG) satellite was successfully launched on December 20 2016. A fluxgate magnetometer (MGF) was built for the ARASE satellite to measure DC and low-frequency magnetic field. The requirements to the magnetic field measurements by ARASE was defined as (1) accuracy of the absolute field intensity is within 5 nT (2) angular accuracy of the field direction is within 1 degree (3) measurement frequency range is from DC to 60Hz or wider. MGF measures the vector magnetic field with the original sampling frequency of 256 Hz. The dynamic range is switched between +/-8000nT and +/- 60000nT according to the background field intensity. The MGF initial checkout was carried on January 10th 2017, when the MGF normal performance and downlinked data were confirmed. The 5-m length MAST for the sensor was deployed on 17th January. The nominal operation of MGF started in March 2017. The MGF data are calibrated based on the results from the ground experiments and in-orbit data analysis. The MGF CDF files are distributed by the ARASE Science Center and available by Space Physics Environment Data Analysis Software (SPEDAS). The acceleration process of the charged particles in the inner magnetosphere is considered to be closely related to the deformation and perturbation of the magnetic field. Accurate measurement of the magnetic field is required to understand the acceleration mechanism of the charged particles, which is one of the major scientific objectives of the ARASE mission. We designed a fluxgate magnetometer which is optimized to investigate following topics; (1) accurate measurement of the background magnetic field - the deformation of the magnetic field and its relationship with the particle acceleration. (2) MHD waves - measurement of the ULF electromagnetic waves of frequencies about 1mHz (Pc4-5), and investigation of the radiation-belt electrons radially diffused by the resonance with the ULF waves. (3) EMIC waves - measurement of the electromagnetic ion

  15. Optical, physical and chemical characteristics of Australian continental aerosols: results from a field experiment

    Directory of Open Access Journals (Sweden)

    M. Radhi

    2010-07-01

    region of the Australian interior.

    Ion chromatography was used to quantify water soluble ions for 2 of our sample sets, complementing the picture provided by ion beam analysis. The strong similarities between the MSA and SO42− size distributions argue strongly for a marine origin of much of the SO42−. The similarity of the Na+, Cl and Mg2+ size distributions also argue for a marine contribution. Further, we believe that both NO3 and NH4+ are the result of surface reactions with appropriate gases.

  16. Growth modes of InN (000-1) on GaN buffer layers on sapphire

    International Nuclear Information System (INIS)

    Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

    2005-01-01

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

  17. The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

    International Nuclear Information System (INIS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

    2015-01-01

    Highlights: • Concave nano-patterned sapphire substrates with SiO 2 blocking layer. • The IQE is almost two times larger than that of conventional one. • The EQE was extremely enhanced more than 100%. - Abstract: In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO 2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO 2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO 2 blocking layer proposed in this work can enhance the performance of LEDs.

  18. Body characteristics, [corrected] dietary protein and body weight regulation. Reconciling conflicting results from intervention and observational studies?

    Directory of Open Access Journals (Sweden)

    Mikkel Z Ankarfeldt

    Full Text Available Physiological evidence indicates that high-protein diets reduce caloric intake and increase thermogenic response, which may prevent weight gain and regain after weight loss. Clinical trials have shown such effects, whereas observational cohort studies suggest an association between greater protein intake and weight gain. In both types of studies the results are based on average weight changes, and show considerable diversity in both directions. This study investigates whether the discrepancy in the evidence could be due to recruitment of overweight and obese individuals into clinical trials.Data were available from the European Diet, Obesity and Genes (DiOGenes post-weight-loss weight-maintenance trial and the Danish Diet, Cancer and Health (DCH cohort. Participants of the DCH cohort were matched with participants from the DiOGenes trial on gender, diet, and body characteristics. Different subsets of the DCH-participants, comparable with the trial participants, were analyzed for weight maintenance according to the randomization status (high or low protein of the matched trial participants.Trial participants were generally heavier, had larger waist circumference and larger fat mass than the participants in the entire DCH cohort. A better weight maintenance in the high-protein group compared to the low protein group was observed in the subgroups of the DCH cohort matching body characteristics of the trial participants.This modified observational study, minimized the differences between the RCT and observational data with regard to dietary intake, participant characteristics and statistical analysis. Compared with low protein diet the high protein diet was associated with better weight maintenance when individuals with greater body mass index and waist circumference were analyzed. Selecting subsets of large-scale observational cohort studies with similar characteristics as participants in clinical trials may reconcile the otherwise conflicting

  19. Impact of parental ages and other characteristics at childbearing on congenital anomalies: Results for the Czech Republic, 2000-2007

    Directory of Open Access Journals (Sweden)

    Jitka Rychtarikova

    2013-01-01

    Full Text Available BACKGROUND If the impact of maternal age at childbearing on congenital anomalies is well-known for the occurrence of Down syndrome, less is known concerning its effects on other major anomalies. Information is even scarcer for the possible effects of other maternal characteristics and of age of the father. OBJECTIVE We present new results on the associations between parental ages and other maternal characteristics, on the one hand, and congenital anomalies, on the other hand, using data linkage between three Czech registries on mother, newborn, and malformations, for the period 2000-2007. METHODS As the variables are in categorical format, binary logistic regression is used in order to investigate the relationship between presence/absence of a congenital anomaly, for each of the eleven types of anomalies considered, and the set of predictors. RESULTS This research confirms the impact of a higher age of the mother on Down syndrome and on other chromosomal anomalies. Paternal age is not associated with chromosomal anomalies and, in this Czech population, has a rather slight effect on some of the congenital anomalies examined. Another finding of the present study is the possible role of various other maternal characteristics on congenital malformations. CONCLUSIONS Based on a large data set, this study concludes that both parental ages can be associated with congenital anomalies of the child, and that maternal characteristics other than age have also to be considered. COMMENTS Risk factors can be tentatively proposed if they are based on a plausible and suitably tested explanatory mechanism. Unfortunately, in the majority of individual cases of congenital anomaly, the cause of the condition is still unknown and suspected to be an interaction of multiple environmental and genetic factors.

  20. Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

    Science.gov (United States)

    Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

    2006-10-01

    Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

  1. Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

    International Nuclear Information System (INIS)

    Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

    1995-01-01

    YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

  2. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates

    International Nuclear Information System (INIS)

    Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

    2012-01-01

    Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated. The devices with a gate length of 160 nm and a gate periphery of 2 × 75 μm exhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics, compared with conventional HEMTs. Furthermore, the extrinsic transconductance of an MOSHEMT is 237.2 mS/mm, only 7% lower than that of Schottky-gate HEMT. An extrinsic current gain cutoff frequency f T of 65 GHz and a maximum oscillation frequency f max of 123 GHz are deduced from rf small signal measurements. The high f max demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies. (cross-disciplinary physics and related areas of science and technology)

  3. Antiphase inversion domains in lithium cobaltite thin films deposited on single-crystal sapphire substrates

    International Nuclear Information System (INIS)

    Zheng, S.J.; Fisher, C.A.J.; Hitosugi, T.; Kumatani, A.; Shiraki, S.; Ikuhara, Y.H.; Kuwabara, A.; Moriwake, H.; Oki, H.; Ikuhara, Y.

    2013-01-01

    Antiphase inversion domains in LiCoO 2 thin films prepared by pulsed laser deposition on sapphire single-crystal substrates are analyzed using a combination of (scanning) transmission electron microscopy and first-principles calculations. Domains form epitaxially on the substrates with orientation relationships of [112 ¯ 0] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 and [1 ¯ 1 ¯ 20] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 . In addition, substrate/film interfaces with the above orientation relationships always have the same stacking sequence of Al–O–Co–O–Li–O. This is confirmed to be the most energetically stable stacking arrangement according to first-principles calculations. Individual domains form as a result of steps one (0 0 0 1) O–Al–O spacing in height on the otherwise flat substrate surface. Because the orientation of adjacent (0 0 0 1) AlO 6 octahedra in Al 2 O 3 are rotated by 180°, while LiO 6 and CoO 6 octahedra in LiCoO 2 are all aligned in the same direction, substrate steps produce LiCoO 2 domains rotated 180° relative to their neighbors. The similar size of oxygen octahedra in the two materials also means that the step height is close to the layer spacing in LiCoO 2 , so that (0 0 0 1) Li and Co layers of adjacent domains are shifted by one layer relative to each other at each domain boundary, aligning Li layers with Co layers across the boundary. The combination of these two effects generates antiphase inversion domains. The domain boundaries effectively sever Li-ion diffusion pathways in the (0 0 0 1) planes between domains and thus are expected to have a detrimental effect on Li-ion conductivity

  4. Epitactical FeAl films on sapphire and their magnetic properties; Epitaktische FeAl-Filme auf Saphir und ihre magnetischen Eigenschaften

    Energy Technology Data Exchange (ETDEWEB)

    Trautvetter, Moritz

    2011-05-05

    In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr{sup +} irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

  5. Dependence of secondary electron emission on surface charging in sapphire and polycrystalline alumina: Evaluation of the effective cross sections for recombination and trapping

    International Nuclear Information System (INIS)

    Said, K.; Damamme, G.; Si Ahmed, A.; Moya, G.; Kallel, A.

    2014-01-01

    Highlights: • A novel approach for the analysis of the secondary electron emission in connection with the surface density of trapped charges. • Experimental estimation of the effective cross section for electron–hole recombination and electron trapping in defects. • A simplified charge transport and trapping model which corroborates qualitatively the interpretation of the results. - Abstract: The evolution of the secondary electron emission from sapphire and polycrystalline alumina during electron irradiation, achieved in a scanning electron microscope at room temperature, is derived from the measurement of the induced and the secondary electron currents. The semi-logarithmic plot of the secondary electron emission yield versus the surface density of trapped charges displays a plateau followed by a linear variation. For positive charging, the slope of the linear part, whose value is of about 10 −9 cm 2 , is independent of the primary electron energy, the microstructure and the impurities. It is interpreted as an effective microscopic cross section for electron–hole recombination. For negative charging of sapphire, the slope is associated with an effective electron trapping cross section close to 10 −11 cm 2 , which can be assigned to the dominant impurity trap. These effective values reflect the multiple interactions leading to the accumulation of charges. The yield corresponding to the plateau is controlled by the initial density of impurity traps. A charge transport and trapping >model, based on simplifying assumptions, confirms qualitatively these inferences

  6. Analysis of Survey Results in Terms of Selection of Characteristics of the Mining Rescuer to the Ranks of Rapid Response

    Science.gov (United States)

    Grodzicka, Aneta; Szlązak, Jan

    2016-06-01

    The authors of the current study undertook the subject of the analysis features of the mining rescuer as a member of the ranks of the rescue, with particular emphasis on the following parameters: heart rate, body weight, height, BMI, age and seniority in the mining and rescue. This publication concerns the analysis of the test results of these characteristics rescuer as a potential member of the ranks of the rescue, taking into account its risk appetite, stress resistance, attitude towards life, the role of the team, teamwork, attitude to work, motivation to work and physical fitness.

  7. ANALYSIS OF SURVEY RESULTS IN TERMS OF SELECTION OF CHARACTERISTICS OF THE MINING RESCUER TO THE RANKS OF RAPID RESPONSE

    Directory of Open Access Journals (Sweden)

    Aneta GRODZICKA

    2016-04-01

    Full Text Available The authors of the current study undertook the subject of the analysis features of the mining rescuer as a member of the ranks of the rescue, with particular emphasis on the following parameters: heart rate, body weight, height, BMI, age and seniority in the mining and rescue. This publication concerns the analysis of the test results of these characteristics rescuer as a potential member of the ranks of the rescue, taking into account its risk appetite, stress resistance, attitude towards life, the role of the team, teamwork, attitude to work, motivation to work and physical fitness.

  8. results

    Directory of Open Access Journals (Sweden)

    Salabura Piotr

    2017-01-01

    Full Text Available HADES experiment at GSI is the only high precision experiment probing nuclear matter in the beam energy range of a few AGeV. Pion, proton and ion beams are used to study rare dielectron and strangeness probes to diagnose properties of strongly interacting matter in this energy regime. Selected results from p + A and A + A collisions are presented and discussed.

  9. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

    2015-06-01

    Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

  10. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  11. Investigation of diamond wheel topography in Elliptical Ultrasonic Assisted Grinding (EUAG) of monocrystal sapphire using fractal analysis method.

    Science.gov (United States)

    Wang, Qiuyan; Zhao, Wenxiang; Liang, Zhiqiang; Wang, Xibin; Zhou, Tianfeng; Wu, Yongbo; Jiao, Li

    2018-03-01

    The wear behaviors of grinding wheel have significant influence on the work-surface topography. However, a comprehensive and quantitative method is lacking for evaluating the wear conditions of grinding wheel. In this paper, a fractal analysis method is used to investigate the wear behavior of resin-bonded diamond wheel in Elliptical Ultrasonic Assisted Grinding (EUAG) of monocrystal sapphire, and a series of experiments on EUAG and conventional grinding (CG) are performed. The results show that the fractal dimension of grinding wheel topography is highly correlated to the wear behavior, i.e., grain fracture, grain pullout, and wheel loading. An increase in cutting edge density on the wheel surface results in an increase of the fractal dimension, but an increase in the grain pullout and wheel loading results in a decrease in the fractal dimension. The wheel topography in EUAG has a higher fractal dimension than that in CG before 60 passes due to better self-sharpening behavior, and then has a smaller fractal dimension because of more serious wheel loadings after 60 passes. By angle-dependent distribution analysis of profile fractal dimensions, the wheel surface topography is transformed from isotropic to anisotropic. These indicated that the fractal analysis method could be further used in monitoring of a grinding wheel performance in EUAG. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

    Science.gov (United States)

    Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

    2018-05-01

    High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

  13. A Novel Non-Planar Transverse Stretching Process for Micro-Porous PTFE Membranes and Resulting Characteristics

    KAUST Repository

    Chang, Y.-H.

    2018-02-26

    Polytetrafluoroethylene (PTFE) micro-porous membranes were prepared from PTFE fine powder through extruding, rolling, and uniaxial longitudinally stretching. In contrast to conventional planar transverse stretching, a novel 3D mold design of non-planar transverse stretching process was employed in this study to produce micro-porous structure. The morphology, membrane thickness, mean pore size, and porosity of the PTFE membrane were investigated. The results show that the non-planar transverse stretched membranes exhibit more uniform average pore diameter with thinner membrane thickness. Morphological changes induced by planar and non-planar transverse stretching for pore characteristics were investigated. The stretching conditions, stretching temperature and rate, affect the stretched membrane. Increasing temperature facilitated the uniformity of pore size and uniformity of membrane thickness. Moreover, increase in stretching rate resulted in finer pore size and thinner membrane.

  14. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    OpenAIRE

    Kohei Ueno; Eiji Kishikawa; Jitsuo Ohta; Hiroshi Fujioka

    2017-01-01

    High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films...

  15. A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

    DEFF Research Database (Denmark)

    Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

    2010-01-01

    We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

  16. Response of Seven Crystallographic Orientations of Sapphire Crystals to Shock Stresses of 16 to 86 GPa

    OpenAIRE

    Kanel, G. I.; Nellis, W. J.; Savinykh, A. S.; Razorenov, S. V.; Rajendran, A. M.

    2009-01-01

    Shock-wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations were measured with time-resolved VISAR interferometry at shock stresses in the range 16 to 86 GPa. Shock propagation was normal to the surface of each cut. The angle between the c-axis of the hexagonal crystal structure and the direction of shock propagation varied from 0 for c-cut up to 90 degrees for m-cut in the basal plane. Based on published shock-induced transparencies, shock-induced optical ...

  17. Possible pitfalls in search of magnetic order in thin films deposited on single crystalline sapphire substrates

    International Nuclear Information System (INIS)

    Salzer, R.; Spemann, D.; Esquinazi, P.; Hoehne, R.; Setzer, A.; Schindler, K.; Schmidt, H.; Butz, T.

    2007-01-01

    We have studied the field and temperature dependence of the magnetic moment of single crystalline sapphire substrates with different surface orientations. All the substrates show a ferromagnetic behavior that partially changes after surface cleaning. The amount of magnetic impurities in the substrates was determined by particle induced X-ray emission. The overall analysis of the data indicates that the magnetic impurities very likely contribute to the measured ferromagnetic behavior but does not rule out completely intrinsic contributions. Our work stresses the necessity to use other than bulk characterization methods for the study of weak ferromagnetic signals of thin films grown on oxide substrates

  18. Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process

    Science.gov (United States)

    Nguyen, Tran Phu; Chuang, Hsiao-Tsun; Chen, Jyh-Chen; Hu, Chieh

    2018-02-01

    In this study, the effect of the power history on the shape of a sapphire crystal and the thermal stress during the Kyropoulos process are numerically investigated. The simulation results show that the thermal stress is strongly dependent on the power history. The thermal stress distributions in the crystal for all growth stages produced with different power histories are also studied. The results show that high von Mises stress regions are found close to the seed of the crystal, the highly curved crystal surface and the crystal-melt interface. The maximum thermal stress, which occurs at the crystal-melt interface, increases significantly in value as the crystal expands at the crown. After this, there is reduction in the maximum thermal stress as the crystal lengthens. There is a remarkable enhancement in the maximum von Mises stress when the crystal-melt interface is close to the bottom of the crucible. There are two obvious peaks in the maximum Von Mises stress, at the end of the crown stage and in the final stage, when cracking defects can form. To alleviate this problem, different power histories are considered in order to optimize the process to produce the lowest thermal stress in the crystal. The optimal power history is found to produce a significant reduction in the thermal stress in the crown stage.

  19. A Procedure for Determining Tire-Road Friction Characteristics Using a Modification of the Magic Formula Based on Experimental Results

    Science.gov (United States)

    Pérez, Javier; Velasco, Juan M.; Guerra, Antonio J.; Hernández, Pedro

    2018-01-01

    Knowledge of tire-road friction characteristics is essential for the proper performance of most relevant vehicle active safety systems. Therefore, its determination is necessary to improve the effectiveness of these systems and to avoid or reduce the consequences of traffic accidents. For this reason, there is a great deal of literature concerning methods and devices for measuring and modeling tire-road friction. Most of these methods have focused on determining the road friction resistance, taking only road composition and making measurements in wet conditions into account. However, friction forces are also dependent on the tire type, since the contact is established between the tire and the road in real driving conditions. Thus, the type and characteristics of the tire have to be considered in the study of the interaction between the vehicle and the road. The aim of this work is to unify the study of the friction coefficient, taking into consideration the two existing bodies involved in the contact, i.e., the tire and road and the main factors that influence the forces in the contact. To this end, a modification of the Pacejka Magic Formula is proposed to include the effects of the main parameters that influence the contact, such as road composition and its state, tire type, vehicle speed, and slip between the tire and the road. To do so, real tests have been conducted on several roads and with different operating conditions. As a result, a more accurate tire-road friction model has been obtained. PMID:29562623

  20. A Procedure for Determining Tire-Road Friction Characteristics Using a Modification of the Magic Formula Based on Experimental Results

    Directory of Open Access Journals (Sweden)

    Juan A. Cabrera

    2018-03-01

    Full Text Available Knowledge of tire-road friction characteristics is essential for the proper performance of most relevant vehicle active safety systems. Therefore, its determination is necessary to improve the effectiveness of these systems and to avoid or reduce the consequences of traffic accidents. For this reason, there is a great deal of literature concerning methods and devices for measuring and modeling tire-road friction. Most of these methods have focused on determining the road friction resistance, taking only road composition and making measurements in wet conditions into account. However, friction forces are also dependent on the tire type, since the contact is established between the tire and the road in real driving conditions. Thus, the type and characteristics of the tire have to be considered in the study of the interaction between the vehicle and the road. The aim of this work is to unify the study of the friction coefficient, taking into consideration the two existing bodies involved in the contact, i.e., the tire and road and the main factors that influence the forces in the contact. To this end, a modification of the Pacejka Magic Formula is proposed to include the effects of the main parameters that influence the contact, such as road composition and its state, tire type, vehicle speed, and slip between the tire and the road. To do so, real tests have been conducted on several roads and with different operating conditions. As a result, a more accurate tire-road friction model has been obtained.

  1. A Procedure for Determining Tire-Road Friction Characteristics Using a Modification of the Magic Formula Based on Experimental Results.

    Science.gov (United States)

    Cabrera, Juan A; Castillo, Juan J; Pérez, Javier; Velasco, Juan M; Guerra, Antonio J; Hernández, Pedro

    2018-03-17

    Knowledge of tire-road friction characteristics is essential for the proper performance of most relevant vehicle active safety systems. Therefore, its determination is necessary to improve the effectiveness of these systems and to avoid or reduce the consequences of traffic accidents. For this reason, there is a great deal of literature concerning methods and devices for measuring and modeling tire-road friction. Most of these methods have focused on determining the road friction resistance, taking only road composition and making measurements in wet conditions into account. However, friction forces are also dependent on the tire type, since the contact is established between the tire and the road in real driving conditions. Thus, the type and characteristics of the tire have to be considered in the study of the interaction between the vehicle and the road. The aim of this work is to unify the study of the friction coefficient, taking into consideration the two existing bodies involved in the contact, i.e., the tire and road and the main factors that influence the forces in the contact. To this end, a modification of the Pacejka Magic Formula is proposed to include the effects of the main parameters that influence the contact, such as road composition and its state, tire type, vehicle speed, and slip between the tire and the road. To do so, real tests have been conducted on several roads and with different operating conditions. As a result, a more accurate tire-road friction model has been obtained.

  2. Biological Characteristics and Medical Treatment of Breast Cancer in Young Women—A Featured Population: Results from the NORA Study

    Directory of Open Access Journals (Sweden)

    P. Pronzato

    2011-01-01

    Full Text Available Background. The present paper described the biological characteristics and clinical behavior of young women in the cohort NORA study Patients and Methods. From 2000–2002, patients (>3500 were enrolled at 77 Italian hospitals. Women aged ≤50 years (=1013 were stratified into age groups (≤35, 36–40, 41–45, and 46–50 years. The relationship between age and patient characteristics, cancer presentation, and treatment was analyzed. Results. Younger women more frequently had tumors with ER/PgR-negative(2=7.07; =.008, HER2 amplification (2=5.76; =.01, and high (≥10% Ki67 labelling index (2=9.53; =.002. Positive nodal status, large tumors, and elevated Ki67 all associated with the choice for chemotherapy followed by endocrine therapy in hormone receptor-positive patients (40 versus ≤40, <.0001, resp.. At multivariate analysis, after adjustment for significant clinical and pathological factors, age remains a significant prognostic variable (HR=0.93, =.0021. Conclusion. This cohort study suggests that age per sè is an important prognostic factor. The restricted role of early diagnosis and the aggressive behavior of cancer in this population make necessary the application of targeted medical strategies crucial.

  3. Biological Characteristics and Medical Treatment of Breast Cancer in Young Women-A Featured Population: Results from the Nora Study

    International Nuclear Information System (INIS)

    Pronzato, P.; Mustacchi, G.; De Matteis, A.; Di Costanzo, F.; Rulli, E.; Floriani, I; Cazzaniga, M.E.

    2011-01-01

    Background. The present paper described the biological characteristics and clinical behavior of young women in the cohort NORA study Patients and Methods. From 2000-2002, patients (N>3500) were enrolled at 77 Italian hospitals. Women aged =50 years (N=1013) were stratified into age groups (=35, 36-40, 41-45, and 46-50 years). The relationship between age and patient characteristics, cancer presentation, and treatment was analyzed. Results. Younger women more frequently had tumors with ER/PgR-negative(x 2 =7.07; P=.008), HER2 amplification (x 2 =5.76; P=.01), and high (≤10%) Ki67 labelling index (x 2 =9.53; P=.002). Positive nodal status, large tumors, and elevated Ki67 all associated with the choice for chemotherapy followed by endocrine therapy in hormone receptor-positive patients (P 40 versus =40, P<.0001, resp.). At multivariate analysis, after adjustment for significant clinical and pathological factors, age remains a significant prognostic variable (HR=0.93, P=.0021). Conclusion. This cohort study suggests that age per se is an important prognostic factor. The restricted role of early diagnosis and the aggressive behavior of cancer in this population make necessary the application of targeted medical strategies crucial. human epidermal growth factor receptor

  4. Research on the operation characteristics of a free-piston linear generator: Numerical model and experimental results

    International Nuclear Information System (INIS)

    Guo, Chendong; Feng, Huihua; Jia, Boru; Zuo, Zhengxing; Guo, Yuyao; Roskilly, Tony

    2017-01-01

    Highlights: • The operation process of free-piston linear generator is investigated. • The larger the motor force at the starting process, the fewer circulations of the piston reciprocating to meet ignition condition. • The “gradually switching strategy” is the best strategy in the intermediate process. • During the generating process, engines indicated power is 2.9 kW with an efficiency of 37.3% under medium load. - Abstract: Free piston linear generator (FPLG) shows unique operation characteristics due to the elimination of crankshaft and connecting rod mechanism. This paper investigates its operation characteristics during each operating process based on the simulation and experiment results. During the starting process, the larger motor force during the starting process, the fewer times of reciprocating pistons which meet the condition of ignition. When the motor force reached 300 N, the prototype could adopt one-stroke starting strategy. During the intermediate process, it was found that the “gradually switching strategy” could help to achieve a smoother operation during the intermediate process. And the values of the operation parameters after the intermediate process were lower than those before the intermediate process. During the generating process, cycle-to-cycle variations were observed for piston TDC and in-cylinder gas pressure from the experimental results. According to the experimental results of the FPLG during the generating process, the calculated engine indicated power is 2.9 kW, and the corresponding indicated thermal efficiency is 37.3%. Additionally, based on the comparison of the FPLG performance, it is found that the parameters of the FPLG during the generating process are smaller than those when it was operated during the second stage of the starting process, while much higher than those during the first stage of the starting process.

  5. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  6. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  7. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  8. Front Surface Tandem Filters using Sapphire (Al2O3) Substrates for Spectral Control in thermophotovoltaic Energy Conversion Systems

    International Nuclear Information System (INIS)

    T Rahmlow, Jr.; J Lazo-Wasem; E Gratrix; P Fourspring; D DePoy

    2005-01-01

    Front surface filters provide an effective means of improving thermophotovoltaic (TPV) system efficiency through spectral control of incident radiant energy. A front surface filter reflects the below band gap photons that can not be converted by the TPV cell back towards the high temperature radiator and allows convertible above band gap photons to pass through the filter into the TPV cell for conversion to electricity. The best spectral control efficiency to date has been demonstrated by front surface, tandem filters that combine an interference filter and an InPAs layer (plasma filter) in series. The InPAs material is a highly doped, epitaxially grown layer on an InP substrate. These tandem filter designs have been fabricated with energy and angle weighted spectral efficiencies of 76% for TPV cells with a 2.08(micro)m (0.6eV) band gap [1]. An alternative to the InPAs layer on an InP substrate is an Al 2 O 3 (sapphire) substrate. The use of Al 2 O 3 may increase transmission of above band gap photons, increase the mechanical strength of the tandem filter, and lower the cost of the tandem filter, all at the expense of lower spectral efficiency. This study presents design and fabrication results for front surface tandem filters that use an Al 2 O 3 substrate for 2.08(micro)m band gap TPV cells

  9. Optogenetic activation of neocortical neurons in vivo with a sapphire-based micro-scale LED probe

    Directory of Open Access Journals (Sweden)

    Niall eMcAlinden

    2015-05-01

    Full Text Available Optogenetics has proven to be a revolutionary technology in neuroscience and has advanced continuously over the past decade. However, optical stimulation technologies for in vivo need to be developed to match the advances in genetics and biochemistry that have driven this field. In particular, conventional approaches for in vivo optical illumination have a limitation on the achievable spatio-temporal resolution. Here we utilize a sapphire-based microscale gallium nitride light-emitting diode (µLED probe to activate neocortical neurons in vivo. The probes were designed to contain independently controllable multiple µLEDs, emitting at 450 nm wavelength with an irradiance of up to 2 W/mm2. Monte-Carlo stimulations predicted that optical stimulation using a µLED can modulate neural activity within a localized region. To validate this prediction, we tested this probe in the mouse neocortex that expressed channelrhodopsin-2 (ChR2 and compared the results with optical stimulation through a fiber at the cortical surface. We confirmed that both approaches reliably induced action potentials in cortical neurons and that the µLED probe evoked strong responses in deep neurons. Due to the possibility to integrate many optical stimulation sites onto a single shank, the µLED probe is thus a promising approach to control neurons locally in vivo.

  10. Time-resolved light emission of a, c, and r-cut sapphires shock-compressed to 65 GPa

    Science.gov (United States)

    Liu, Q. C.; Zhou, X. M.

    2018-04-01

    To investigate light emission and dynamic deformation behaviors, sapphire (single crystal Al2O3) samples with three crystallographic orientations (a, c, and r-cut) were shock-compressed by the planar impact method, with final stress ranges from 47 to 65 GPa. Emission radiance and velocity versus time profiles were simultaneously measured with a fast pyrometer and a Doppler pin system in each experiment. Wave profile results show anisotropic elastic-plastic transitions, which confirm the literature observations. Under final shock stress of about 52 GPa, lower emission intensity is observed in the r-cut sample, in agreement with the previous report in the literature. When final shock stress increases to 57 GPa and 65 GPa, spectral radiance histories of the r-cut show two stages of distinct features. In the first stage, the emission intensity of r-cut is lower than those of the other two, which agrees with the previous report in the literature. In the second stage, spectral radiance of r-cut increases with time at much higher rate and it finally peaks over those of the a and c-cut. These observations (conversion of intensified emission in the r-cut) may indicate activation of a second slip system and formation of shear bands which are discussed with the resolved shear stress calculations for the slip systems in each of the three cuts under shock compression.

  11. Characteristics, finite element analysis, test description, and preliminary test results of the STM4-120 kinematic Stirling engine

    Science.gov (United States)

    Linker, K. L.; Rawlinson, K. S.; Smith, G.

    1991-10-01

    The Department of Energy's Solar Thermal Program has, as one of its program elements, the development and evaluation of conversion device technologies applicable to dish-electric systems. The primary research and development combines a conversion device (heat engine), solar receiver, and generator mounted at the focus of a parabolic dish concentrator. The Stirling-cycle heat engine was identified as the conversion device for dish-electric with the most potential for meeting the program's goals for efficiency, reliability, and installed cost. To advance the technology toward commercialization, Sandia National Laboratories has acquired a Stirling Thermal Motors, Inc. kinematic Stirling engine, STM4-120, for evaluation. The engine is being bench-tested at Sandia's Engine Test Facility and will be combined later with a solar receiver for on-sun evaluation. This report presents the engine characteristics, finite element analyses of critical engine components, test system layout, instrumentation, and preliminary performance results from the bench test.

  12. [CHARACTERISTICS OF OSTEOCYTE CELL LINES FROM BONES FORMED AS A RESULT OF MEMBRANOUS (SKULL BONES) AND CHONDRAL (LONG BONES) OSSIFICATION].

    Science.gov (United States)

    Avrunin, A S; Doktorov, A A

    2016-01-01

    The aim of this work was to analyze the literature data and the results of authors' own research, to answer the question--if the osteocytes of bone tissues resulting from membranous and chondral ossification, belong to one or to different cell lines. The differences between the cells of osteocyte lines derived from bones resulting from membranous and chondral ossification were established in: 1) the magnitude of the mechanical signal, initiating the development of the process of mechanotransduction; 2) the nature of the relationship between the magnitude of the mechanical signal that initiates the reorganization of the architecture of bone structures and the resource of their strength; in membranous bones significantly lower mechanical signal caused a substantially greater increment of bone strength resource; 3) the biological activity of bone structures, bone fragments formed from membranous tissue were more optimal for transplantation; 4) the characteristics of expression of functional markers of bone cells at different stages of their differentiation; 5) the nature of the reaction of bone cells to mechanical stress; 6) the sensitivity of bone cells to one of the factors controlling the process of mechanotransduction (PGI2); 7) the functioning of osteocytes during lactation. These differences reflect the functional requirements to the bones of the skeleton--the supporting function in the bones of the limbs and the shaping and protection in the bones of the cranial vault. These data suggest that the results of research conducted on the bones of the skull, should not be transferred to the entire skeleton as a whole.

  13. High-rate sputter deposition of NiAl on sapphire fibers

    Energy Technology Data Exchange (ETDEWEB)

    Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

    2002-07-01

    Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

  14. Single phase semipolar (11 anti 22) GaN on (10 anti 10) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Ploch, S.; Stellmach, J.; Schwaner, T.; Frentrup, M.; Wernicke, T.; Pristovsek, M.; Kneissl, M. [Institute of Solid States Physics, (Germany); Park, J.B.; Niermann, T.; Lehmann, M. [Institute of Optics and Atomic Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    InGaN quantum well based light emitters grown on (0001) GaN suffer from poor quantum efficiencies with increasing indium mole fraction due to strong polarization fields along the polar crystal orientation. This effect can be greatly reduced by growing on semi- and non-polar GaN orientations. Semipolar (11 anti 22) GaN layers were deposited by metalorganic vapour phase epitaxy on (10 anti 10) sapphire. After sapphire substrate nitridation at 1000 C, a GaN nucleation layer was deposited at high temperature, followed by the deposition of 1.5 nm thick GaN buffer layers. The samples show predominantly (11 anti 22) orientation with a small fraction of (10 anti 13) oriented domains. With increasing nitridation layer thickness the (10 anti 13) phase is suppressed leading to a very smooth surface morphology (rms roughness < 4nm). PL measurements show dominant basel plane stacking fault (BSF) I{sub 1} luminescence without any other defects. Transmission electron microscopy measurements reveal a high BSF density. The FWHM of the X-ray diffraction rocking curve measurements of the (1122) reflection decreases to 1193 arcsec and 739 arcsec along [1 anti 100] and [11 anti 23] respectively with increasing nucleation temperature. Using high temperature nucleation smooth and homogeneous (11 anti 22) phase GaN layers have been obtained.

  15. Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

    International Nuclear Information System (INIS)

    Stoker, D. S.; Keto, J. W.; Baek, J.; Wang, W.; Becker, M. F.; Kovar, D.

    2006-01-01

    We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χ xxxx (3) (3ω;ω,ω,ω)=1.52±0.25x10 -13 esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects

  16. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    International Nuclear Information System (INIS)

    Klinter, Andreas J.; Leon-Patino, Carlos A.; Drew, Robin A.L.

    2010-01-01

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions θ transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl 2 O 4 for Al-7Cu and Al 2 O 3 for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl 2 O 4 under CuAl 2 drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl 2 O 4 causes the reduced σ sl and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in θ with higher copper contents is the increasing σ lv of the alloy.

  17. Wetting phenomena of Al-Cu alloys on sapphire below 800 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Klinter, Andreas J., E-mail: andreas.klinter@mail.mcgill.ca [Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 University Street, Montreal, QC, H3A 2B2 (Canada); Leon-Patino, Carlos A. [Instituto de Investigaciones Metalurgicas, Universidad Michoacana de San Nicolas de Hidalgo, Apdo. Postal 888, CP 58000 Morelia, Michoacan (Mexico); Drew, Robin A.L. [Faculty of Engineering and Computer Science, Concordia University, 1455 Maisonneuve Blvd, EV 2.169, Montreal, QC, H3G 1M8 (Canada)

    2010-02-15

    Using a modified dispensed drop method, a decrease in contact angle on sapphire from pure aluminum to low-copper-containing Al alloys (7-12 wt.%) was found; with higher copper additions {theta} transitions to the non-wetting regime. Atomic force microscopy on long-term samples showed a significantly increased surface roughness beneath the drop. Using high-resolution transmission electron microscopy, the reaction product at the interface was identified as CuAl{sub 2}O{sub 4} for Al-7Cu and Al{sub 2}O{sub 3} for an Al-99.99 drop. X-ray photoelectron spectroscopy further confirmed the formation of CuAl{sub 2}O{sub 4} under CuAl{sub 2} drops. Spinel formation is caused by reaction of the alloy with residual oxygen in the furnace that is transported along the interface as modeled by thermodynamic simulations. The formation of CuAl{sub 2}O{sub 4} causes the reduced {sigma}{sub sl} and hence the improved wettability of sapphire by low-copper-containing alloys compared to pure aluminum. The main reason for the increase in {theta} with higher copper contents is the increasing {sigma}{sub lv} of the alloy.

  18. The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

    Science.gov (United States)

    Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

    2018-03-01

    Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

  19. Wetting behavior of liquid Fe-C-Ti alloys on sapphire

    International Nuclear Information System (INIS)

    Gelbstein, M.; Froumin, N.; Frage, N.

    2008-01-01

    Wetting behavior in the (Fe-C-Ti)/sapphire system was studied at 1823 K. The wetting angle between sapphire and Fe-C alloys is higher than 90 deg. (93 deg. and 105 deg. for the alloys with 1.4 and 3.6 at.% C, respectively). The presence of Ti improves the wetting of the iron-carbon alloys, especially for the alloys with carbon content of 3.6 at.%. The addition of 5 at.% Ti to Fe-3.6 at.% C provides a contact angle of about 30 deg., while the same addition to Fe-1.4 at.% C decreases the wetting angle to 70 deg. only. It was established that the wetting in the systems is controlled by the formation of a titanium oxicarbide layer at the interface, which composition and thickness depend on C and Ti contents in the melt. The experimental observations are well accounted for by a thermodynamic analysis of the Fe-Ti-Al-O-C system

  20. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Sang Ling; Liu Jian-Ming; Xu Xiao-Qing; Wang Jun; Zhao Gui-Juan; Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; Wei Hong-Yuan; Liu Xiang-Lin; Yang Shao-Yan; Zhu Qin-Sheng; Wang Zhan-Guo

    2012-01-01

    The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on r-sapphire is studied. The influences of V/III ratio and growth temperature on surface morphology are investigated. V-pits and stripes are observed on the surface of a-GaN grown at 1050°C and 1100°C, respectively. The overall orientation and geometry of V-pits are uniform and independent on the V/III molar ratio in the samples grown at 1050°C, while in the samples grown at 1100°C, the areas of stripes decrease with the adding of V/III ratio. We deduce the origin of V-pits and stripes by annealing the buffer layers at different temperatures. Because of the existence of inclined (101-bar1) facets, V-pits are formed at 1050°C. The (101-bar1) plane is an N terminated surface, which is metastable at higher temperature, so stripes instead of V-pits are observed at 1100°C. Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films. Hence, to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire. (condensed matter: structure, mechanical and thermal properties)

  1. Improving solar radiation absorbance of high refractory sintered ceramics by fs Ti:sapphire laser surface treatment

    International Nuclear Information System (INIS)

    Cappelli, E.; Orlando, S.; Sciti, D.; Bellucci, A.; Lettino, A.; Trucchi, D.M.

    2014-01-01

    Samples of high refractory pressure-less sintered carbide ceramics (HfC based), polished by mechanical grinding to a surface roughness R a ∼ 40 nm, have been surface treated, in vacuum, by fs Ti:sapphire laser, operating at 800 nm wavelength, 1000 Hz repetition rate and 100 fs pulse duration, at fluence varying in the range (∼6–25 J/cm 2 ), to optimize their solar radiation absorbance, in such a way that they could operate as absorber material in an innovative conversion module of solar radiation into electrical energy. To this aim, an area of approximately 9.6 cm 2 was treated by the fs laser beam. The beam strikes perpendicular to the sample, placed on a stage set in motion in the x, y, z-directions, thus generating a scanning pattern of parallel lines. The experimental conditions of laser treatment (energy fluence, speed of transition, overlapping and lateral step distance) were varied in order to optimize the radiation absorption properties of the patterned surface. In laser treated samples the absorption value is increased by about 15%, compared to the original untreated surface, up to a value of final absorbance of about 95%, all over the range of solar radiation spectrum (from UV to IR). The morphological and chemical effects of the treatment have been evaluated by SEM–EDS analysis. At very high fluence, we obtained the characteristic ablation craters and local material decomposition, while at lower fluence (in any case above the threshold) typical periodic nano-structures have been obtained, exploitable for their modified optical properties.

  2. The effects of patient and physician characteristics on early outpatient satisfaction with substance dependence care: results of the SUBUSQOL study

    Directory of Open Access Journals (Sweden)

    Bourion-Bédès S

    2017-05-01

    Full Text Available Stéphanie Bourion-Bédès,1–3 Raymund Schwan,2 Paolo Di Patrizio,2 Guillaume Vlamynck,2 Sarah Viennet,2 Maxime Schvartz,2 Anne Gaunard,2 Alex Bédès,4 Isabelle Clerc-Urmès,5 Cédric Baumann3,5 1Regional Medical and Psychological Service (SMPR, 2CSAPA (Healthcare Center of Accompaniment and Prevention in Addictology, University Hospital of Nancy, 3EA4360 APEMAC, University of Lorraine, Nancy, 4ANPAA 15-CSAPA (Healthcare Center of Accompaniment and Prevention in Addictology, Saint-Flour, Cantal, 5Platform of Clinical Research Facility PARC, Unit MDS, University Hospital of Nancy, Nancy, France Background: Although patient perceptions of health care have increasingly been explored in the literature, little is known about care satisfaction among individuals with substance dependence. This exploratory study assessed the relationships between patient and physician characteristics and early outpatient satisfaction with care for alcohol and opioid dependence. Methods: Satisfaction was assessed using a multidimensional, self-administered and validated questionnaire during the early care process among a prospective outpatient cohort. In addition to measuring satisfaction and obtaining sociodemographic and clinical data, this study collected data on the self-reported health status and physician characteristics at inclusion. Cross-sectional analysis with multiple linear regression was performed to identify the variables associated with satisfaction level. Results: A total of 249 outpatients were included, and 63.8% completed the satisfaction questionnaire. Patients without a history of previous care for substance dependence were more satisfied with the appointment-making process (β=7.2; P=0.029 and with the doctor consultation (β=10.3; P=0.003 than those who had received care previously. Neither sociodemographic characteristics nor self-reported health status was associated with outpatient satisfaction. Conclusion: The factors that affect patients

  3. Atmospheric boundary layer characteristics over the Pearl River Delta, China, during the summer of 2006: measurement and model results

    Directory of Open Access Journals (Sweden)

    S. J. Fan

    2011-07-01

    Full Text Available As part of the PRIDE-PRD2006 intensive campaign, atmospheric boundary layer (ABL measurements were performed in Qingyuan, Panyu, and Xinken over the Pearl River Delta (PRD on 1–30 July 2006. During the summer, the surface winds over the PRD are generally controlled by the south, usually with vertical wind shear at a height of approximately 800 m. Subsidence and precipitation from a tropical cyclone affects the air quality of the PRD. Under subsidence, wind speed in the ABL and the height of the ABL decrease and result in high-level concentrations. When the background wind speed is small or calm, the wind profile in Panyu and Xinken changes dramatically with height, which is perhaps caused by local circulation, such as sea-land breezes. To better understand the ABL of the PRD, simulations that used the Weather Research and Forecasting (WRF mesoscale model were utilized to analyze the ABL characteristics over the PRD. Based on three types of weather condition simulations (i.e., subsidence days, rainy days, and sunny days, the WRF model revealed that the simulated temperature and wind fields in these three cases were moderately consistent with the measurements. The results showed that diurnal variations of the ABL height on subsidence days and sunny days were obvious, but diurnal variations of the ABL height on rainy days were not apparent. The ABL is obviously affected by local circulation, and the ABL features are different at various stations. A simulation focused on a high pollution episode during the subsidence days on 12–15 July 2006, occurred under high-pressure conditions, accompanied by the tropical cyclone "Bilis". A comparison of the simulated vertical wind fields and temperature structure with the ABL measurements at Xinken, Panyu, and Qingyuan stations found that the modeled and measured atmospheric fields revealed two different types of ABL characteristics over the PRD. When the surface winds over the PRD were light or nearly calm

  4. Study of core characteristics on fuel and coolant type. Results of F/S phase-I

    International Nuclear Information System (INIS)

    Ikegami, Tetsuo; Hayashi, Hideyuki; Sasaki, Makoto; Mizuno, Tomoyasu; Yamadate, Megumi; Takaki, Naoyuki; Kurosawa, Norifumi; Sakashita, Yoshiaki; Naganuma, Masayuki

    2001-03-01

    The phase-I of the Feasibility Study of Commercialized Fast Reactor Cycle Systems (F/S) were started from July, 1999 and terminated at the end of FY2000 in order to executed examination about technology alternatives of various commercialized fast reactor (FR) recycle concepts, in response to the JNC middle long term enterprise plan. In the phase-I of this F/S, a number of conceptual candidates have been selected from the following 5 viewpoints: a) ensuring safety, b) economic competitiveness to future LWRs, c) efficient utilization of resources, d) reduction of environmental burden, e) enhancement of nuclear non-proliferation. As for this study from the above viewpoints, core characteristics of many kinds of reactors have been investigated, analyzed and examined a core / a fuel characteristic in the combinations of fuel and coolant types and power output scales. Based on these results, R and D plans of the phase-II to be performed have been proposed, and a database to select candidate reactor concepts has been prepared. The conclusions have been obtained in the phase-I are as follows: (1) Evaluation of a fuel form in every each coolant was compared. A promising fuel form was extracted as follows: an oxide and a metal fuel for sodium coolant cores, a metal and a nitride fuel for heavy metal coolant cores, an oxide and a nitride fuel for carbon dioxide coolant cores and a nitride fuel for He gas coolant cores. (2) As the general idea that performance of a core nucleus can be compatible with re-criticality evasion in sodium coolant large-sized oxide fuel cores, a axial blanket particle elimination radial heterogeneous core is one influential candidate. (3) In case of Pb-Bi coolant nature circulation medium size core with an oxide fuel, it is difficult to simultaneously achieve higher discharged burn-up and higher breeding ratio according to the viewpoints of the phase-I. (4) Core characteristics of a carbon dioxide coolant core shows to be almost equivalent to that of

  5. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    Directory of Open Access Journals (Sweden)

    Teng Jiang

    2016-03-01

    Full Text Available The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  6. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

    Directory of Open Access Journals (Sweden)

    Yu-An Chen

    2014-01-01

    Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

  7. Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications

    Science.gov (United States)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2018-03-01

    Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.

  8. Quality Characteristics of a Graduate Teacher Education Program in Graphic Communications: Results from a Delphi Research Study.

    Science.gov (United States)

    Clark, Aaron C.; Scales, Alice Y.

    2000-01-01

    Investigates characteristics of a quality program in graphic communications teacher education with involvement of professionals in the field. Uses the Delphi technique to achieve consensus on the characteristics that they felt compromised a good educational program for future graphics teachers. (Contains 27 references.) (Author/YDS)

  9. Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

    International Nuclear Information System (INIS)

    Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

    1999-01-01

    A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

  10. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Czech Academy of Sciences Publication Activity Database

    Musil, Stanislav; Matoušek, Tomáš; Dědina, Jiří

    2015-01-01

    Roč. 108, JUN (2015), s. 61-67 ISSN 0584-8547 R&D Projects: GA ČR GA14-23532S Grant - others:GA AV ČR(CZ) M200311202 Institutional support: RVO:68081715 Keywords : silver * volatile species generation * sapphire tube atomizer Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.289, year: 2015

  11. Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

    International Nuclear Information System (INIS)

    He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

    2003-01-01

    Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

  12. 78 FR 56691 - Sapphire Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes...

    Science.gov (United States)

    2013-09-13

    ... Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes Request for... Sapphire Power Marketing LLC's application for market-based rate authority, with an accompanying rate... submission of protests and interventions in lieu of paper, using the FERC Online links at http://www.ferc.gov...

  13. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, Markus; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  14. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles

  15. Baseline Patient Characteristics Predicting Outcome and Attrition in Cognitive Therapy for Social Phobia: Results from a Large Multicentre Trial.

    Science.gov (United States)

    Hoyer, Juergen; Wiltink, Joerg; Hiller, Wolfgang; Miller, Robert; Salzer, Simone; Sarnowsky, Stephan; Stangier, Ulrich; Strauss, Bernhard; Willutzki, Ulrike; Leibing, Eric

    2016-01-01

    We examined the role of baseline patient characteristics as predictors of outcome (end-state functioning, response and remission) and attrition for cognitive therapy (CT) in social anxiety disorder (SAD). Beyond socio-demographic and clinical variables such as symptom severity and comorbidity status, previously neglected patient characteristics (e.g., personality, self-esteem, shame, interpersonal problems and attachment style) were analysed. Data came from the CT arm of a multicentre RCT with n = 244 patients having DSM-IV SAD. CT was conducted according to the manual by Clark and Wells. Severity of SAD was assessed at baseline and end of treatment with the Liebowitz Social Anxiety Scale (LSAS). Multiple linear regression analyses and logistic regression analyses were applied. Up to 37% of the post-treatment variance (LSAS) could be explained by all pre-treatment variables combined. Symptom severity (baseline LSAS) was consistently negatively associated with end-state functioning and remission, but not with response. Number of comorbid diagnoses was negatively associated with end-state functioning and response, but not with remission. Self-esteem was positively associated with higher end-state functioning and more shame with better response. Attrition could not be significantly predicted. The results indicate that the initial probability for treatment success mainly depends on severity of disorder and comorbid conditions while other psychological variables are of minor importance, at least on a nomothetic level. This stands in contrast with efforts to arrive at an empirical-based foundation for differential indication and argues to search for more potent moderators of therapeutic change rather on the process level. Personality, self-esteem, shame, attachment style and interpersonal problems do not or only marginally moderate the effects of interventions in CT of social phobia. Symptom severity and comorbid diagnoses might affect treatment outcome negatively

  16. CFD approach to modelling, hydrodynamic analysis and motion characteristics of a laboratory underwater glider with experimental results

    Directory of Open Access Journals (Sweden)

    Yogang Singh

    2017-06-01

    Full Text Available Underwater gliders are buoyancy propelled vehicle which make use of buoyancy for vertical movement and wings to propel the glider in forward direction. Autonomous underwater gliders are a patented technology and are manufactured and marketed by corporations. In this study, we validate the experimental lift and drag characteristics of a glider from the literature using Computational fluid dynamics (CFD approach. This approach is then used for the assessment of the steady state characteristics of a laboratory glider designed at Indian Institute of Technology (IIT Madras. Flow behaviour and lift and drag force distribution at different angles of attack are studied for Reynolds numbers varying from 105 to 106 for NACA0012 wing configurations. The state variables of the glider are the velocity, gliding angle and angle of attack which are simulated by making use of the hydrodynamic drag and lift coefficients obtained from CFD. The effect of the variable buoyancy is examined in terms of the gliding angle, velocity and angle of attack. Laboratory model of glider is developed from the final design asserted by CFD. This model is used for determination of static and dynamic properties of an underwater glider which were validated against an equivalent CAD model and simulation results obtained from equations of motion of glider in vertical plane respectively. In the literature, only empirical approach has been adopted to estimate the hydrodynamic coefficients of the AUG that are required for its trajectory simulation. In this work, a CFD approach has been proposed to estimate the hydrodynamic coefficients and validated with experimental data. A two-mass variable buoyancy engine has been designed and implemented. The equations of motion for this two-mass engine have been obtained by modifying the single mass version of the equations described in the literature. The objectives of the present study are to understand the glider dynamics adopting a CFD approach

  17. Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Hsu-Hung Hsueh

    2016-01-01

    Full Text Available The flat-top pyramid patterned sapphire substrates (FTP-PSSs have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μm, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002 plane for the GaN epilayers grown on conventional sapphire substrate (CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102 plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.

  18. Changes of attachment characteristics during psychotherapy of patients with social anxiety disorder: Results from the SOPHO-Net trial.

    Science.gov (United States)

    Strauß, Bernhard; Altmann, Uwe; Manes, Susanne; Tholl, Anne; Koranyi, Susan; Nolte, Tobias; Beutel, Manfred E; Wiltink, Jörg; Herpertz, Stephan; Hiller, Wolfgang; Hoyer, Jürgen; Joraschky, Peter; Nolting, Björn; Ritter, Viktoria; Stangier, Ulrich; Willutzki, Ulrike; Salzer, Simone; Leibing, Eric; Leichsenring, Falk; Kirchmann, Helmut

    2018-01-01

    Within a randomized controlled trial contrasting the outcome of manualized cognitive-behavioral (CBT) and short term psychodynamic therapy (PDT) compared to a waiting list condition (the SOPHO-Net trial), we set out to test whether self-reported attachment characteristics change during the treatments and if these changes differ between treatments. 495 patients from the SOPHO-Net trial (54.5% female, mean age 35.2 years) who were randomized to either CBT, PDT or waiting list (WL) completed the partner-related revised Experiences in Close Relationships Questionnaire (ECR-R) before and after treatment and at 6 and 12 months follow-up. The Liebowitz Social Anxiety Scale (LSAS) was administered at pre-treatment, post-treatment, and at 6-month and 1-year follow-up. ECR-R scores were first compared to a representative healthy sample (n = 2508) in order to demonstrate that the clinical sample differed significantly from the non-clinical sample with respect to attachment anxiety and avoidance. LSAS scores correlated significantly with both ECR-R subscales. Post-therapy, patients treated with CBT revealed significant changes in attachment anxiety and avoidance whereas patients treated with PDT showed no significant changes. Changes between post-treatment and the two follow-ups were significant in both conditions, with minimal (insignificant) differences between treatments at the 12- month follow-up. The current study supports recent reviews of mostly naturalistic studies indicating changes in attachment as a result of psychotherapy. Although there were differences between conditions at the end of treatment, these largely disappeared during the follow-up period which is line with the other results of the SOPHO-NET trial. Controlled-trials.com ISRCTN53517394.

  19. Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

    International Nuclear Information System (INIS)

    Huang, H.W.; Lin, C.H.; Huang, J.K.; Lee, K.Y.; Lin, C.F.; Yu, C.C.; Tsai, J.Y.; Hsueh, R.; Kuo, H.C.; Wang, S.C.

    2009-01-01

    In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20 mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

  20. Characteristics of neonatal units that care for very preterm infants in Europe: results from the MOSAIC study

    DEFF Research Database (Denmark)

    Van Reempts, Patrick; Gortner, Ludwig; Milligan, David

    2007-01-01

    OBJECTIVES: We sought to compare guidelines for level III units in 10 European regions and analyze the characteristics of neonatal units that care for very preterm infants. METHODS: The MOSAIC (Models of Organising Access to Intensive Care for Very Preterm Births) project combined a prospective...... cohort study on all births between 22 and 31 completed weeks of gestation in 10 European regions and a survey of neonatal unit characteristics. Units that admitted > or = 5 infants at

  1. Structural disorder in sapphire induced by 90.3 MeV xenon ions

    International Nuclear Information System (INIS)

    Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

    2010-01-01

    In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

  2. Design of patterned sapphire substrates for GaN-based light-emitting diodes

    International Nuclear Information System (INIS)

    Wang Hai-Yan; Lin Zhi-Ting; Han Jing-Lei; Zhong Li-Yi; Li Guo-Qiang

    2015-01-01

    A new method for patterned sapphire substrate (PSS) design is developed and proven to be reliable and cost-effective. As progress is made with LEDs’ luminous efficiency, the pattern units of PSS become more complicated, and the effect of complicated geometrical features is almost impossible to study systematically by experiments only. By employing our new method, the influence of pattern parameters can be systematically studied, and various novel patterns are designed and optimized within a reasonable time span, with great improvement in LEDs’ light extraction efficiency (LEE). Clearly, PSS pattern design with such a method deserves particular attention. We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years. (topical review)

  3. The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

    Energy Technology Data Exchange (ETDEWEB)

    Alexeev, P., E-mail: pavel.alexeev@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany); Asadchikov, V. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Bessas, D. [European Synchrotron Radiation Facility (France); Butashin, A.; Deryabin, A. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Dill, F.-U.; Ehnes, A.; Herlitschke, M. [Deutsches Elektronen-Synchrotron DESY (Germany); Hermann, R. P.; Jafari, A. [JARA-FIT, Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI (Germany); Prokhorov, I. [Kaluga Branch of Shubnikov Institute of Crystallography RAS, Research Center for Space Materials Science (Russian Federation); Roshchin, B. [Russian Academy of Sciences, A.V. Shubnikov Institute of Crystallography (Russian Federation); Röhlsberger, R.; Schlage, K.; Sergueev, I.; Siemens, A.; Wille, H.-C., E-mail: hans.christian.wille@desy.de [Deutsches Elektronen-Synchrotron DESY (Germany)

    2016-12-15

    We report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on Mössbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with {sup 119}Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. The device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like {sup 151}Eu, {sup 149}Sm, {sup 161}Dy, {sup 125}Te and {sup 121}Sb.

  4. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  5. Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

    DEFF Research Database (Denmark)

    Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

    2017-01-01

    higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

  6. Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

    Science.gov (United States)

    Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

    2016-12-15

    We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D2O) in a D2O-H2O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D2O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

  7. Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

    Science.gov (United States)

    Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

    2018-05-01

    We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

  8. Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

    Science.gov (United States)

    Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

    2010-03-20

    We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

  9. Quality characteristics of gamma irradiated cowpea (vigna unguiculata, L. walp) cultivars in Ghana and their resultant flours

    International Nuclear Information System (INIS)

    Darfour, B.

    2010-01-01

    Cowpeas are leguminous seeds widely produced and consumed in most developing countries of sub Saharan Africa. During storage, cowpeas may be attacked by a number of biological agents (microorganisms, rodents, and insects) which results in losses in the quality and quantity of the stored seeds. These losses can be minimized by irradiating the stored cowpea against microorganisms and insects attacks primarily Callosobruchus maculatus. The aim of this study was to evaluate quality characteristics of gamma irradiated cowpea cultivars and their resultant flours. Four cowpea cultivars were irradiated with gamma radiation at dose levels of 0.25 kGy, 0.5 kGy, 0.75 kGy, 1.0 kGy and 1.5 kGy. The unirradiated cultivars were used as controls. A portion of the samples were hammer milled, passed through sieve of 250μm and stored at 4 o C for analysis. Physicochemical, functional, pasting and sensory properties were determined using standards and/or appropriate methods. Moisture sorption isotherms of the cowpea samples were also determined. Radiosensitivity and storage studies on Callosobruchus maculatus were also done for one month. In general, significant effect (p 0.05) affected by the irradiation. All the physical parameters studied were not significantly (p > 0.05) affected by the radiation. Generally, significant increase (p o C. There was no significant (p > 0.05) effect of the radiation on the sensory attributes like flavour, taste, texture, softness and colour of the cowpea seeds. Similarly, the radiation did not affect significantly (p > 0.05) the acceptability of the treated cowpea cultivars. Irradiating at even a dose of 0.25 kGy killed the insects on average within eight days. There was significant difference (p < 0.05) in the percent mortality between the irradiated and the non-irradiated weevils. The percent mortality increased with increase in the radiation dose. It was established that at the lower doses studied although the radiation effect did not follow any

  10. Patients with schizophrenia or schizoaffective disorder who receive multiple electroconvulsive therapy sessions: characteristics, indications, and results

    Directory of Open Access Journals (Sweden)

    Iancu I

    2015-03-01

    Full Text Available Iulian Iancu,* Nimrod Pick,* Orit Seener-Lorsh, Pinhas Dannon Be’er Ya’akov Mental Health Center, affiliated with the Sackler School of Medicine, Tel Aviv University, Tel Aviv, Israel *These authors share first authorship of this paper Background: While electroconvulsive therapy (ECT has been used for many years, there is insufficient research regarding the indications for continuation/maintenance (C/M-ECT, its safety and efficacy, and the characteristics of patients with schizophrenia or schizoaffective disorder who receive multiple ECT sessions. The aims of this study were to characterize a series of patients who received 30 ECT sessions or more, to describe treatment regimens in actual practice, and to examine the results of C/M-ECT in terms of safety and efficacy, especially the effect on aggression and functioning.Methods: We performed a retrospective chart review of 20 consecutive patients (mean age 64.6 years with schizophrenia (n=16 or schizoaffective disorder (n=4 who received at least 30 ECT sessions at our ECT unit, and also interviewed the treating physician and filled out the Clinical Global Impression-Severity, Global Assessment of Functioning, and the Staff Observation Aggression Scale-Revised.Results: Patients received a mean of 91.3 ECT sessions at a mean interval of 2.6 weeks. All had been hospitalized for most or all of the previous 3 years. There were no major adverse effects, and cognitive side effects were relatively minimal (cognitive deficit present for several hours after treatment. We found that ECT significantly reduced scores on the Staff Observation Aggression Scale-Revised subscales for verbal aggression and self-harm, and improved Global Assessment of Functioning scores. There were reductions in total aggression scores, subscale scores for harm to objects and to others, and Clinical Global Impression-Severity scores, these were not statistically significant.Conclusion: C/M-ECT is safe and effective for

  11. Clinical characteristics of depressed patients with a history of suicide attempts: results from the CRESCEND study in South Korea.

    Science.gov (United States)

    Park, Min-Hyeon; Kim, Tae-Suk; Yim, Hyeon-Woo; Jeong, Seung Hee; Lee, Chul; Lee, Chang-Uk; Kim, Jae-Min; Jung, Sung-Won; Lee, Min-Soo; Jun, Tae-Youn

    2010-10-01

    South Korea is a country with one of the highest suicide rates in the world, and the suicide rate is still on the rise. The purpose of this study was to determine the sociodemographic and clinical characteristics of suicide attempts and risk factors related to suicide attempts among depressed patients in South Korea. Among the 1183 participants, 21.4% had a history of a suicide attempt. When the severity of depression was controlled, the risk factors for patients who attempted suicide included younger age, experienced significant life events before 12 years of age, psychotic symptoms, and previous depressive episodes. The characteristics of attempted suicide in depressed patients in South Korea can be summarized as a high suicide attempt rate with no difference in the number of suicide attempts and lethality between males and females. This unique tendency is probably related to the sociodemographic and cultural characteristics of South Korea.

  12. Teaching Motivations, Characteristics and Professional Growth: Results from the Great Expectations (GE) Programme in the United States

    Science.gov (United States)

    Thomson, Margareta Maria; Turner, Jeannine

    2015-01-01

    This present study sought to explore reasons given by K-12 teachers about their motivation to remain in teaching, their motivation for engaging in professional development, and characteristics of their teaching. Participants (N = 151) were public teachers of different grade levels from the USA enrolled in a one-week professional development…

  13. Birth characteristics and female sex hormone concentrations during adolescence: results from the Dietary Intervention Study in Children.

    Science.gov (United States)

    Ruder, Elizabeth H; Hartman, Terryl J; Rovine, Michael J; Dorgan, Joanne F

    2011-04-01

    Birth characteristics and adult hormone concentrations influence breast cancer risk, but little is known about the influence of birth characteristics on hormone concentrations, particularly during adolescence. We evaluated the association of birth characteristics (birth weight, birth length, and gestational age) with serum sex hormone concentrations during late childhood and adolescence in 278 female participants of the Dietary Intervention Study in Children. Repeated measures analysis of variance models were used to assess the relationships of birth characteristics and serum estrogens and androgens at five different time points over a mean period of 7 years. In analyses that did not take into account time from blood draw until menarche, birth weight was inversely associated with pre-menarche concentrations of estradiol, estrone sulfate, androstenedione, testosterone, and dehydroepiandrosterone sulfate (DHEAS). In the post-menarche analyses, birth weight was not significantly associated with concentration of any of the hormones under investigation. Birth length and gestational age were not associated with hormone concentrations before or after menarche. Birth weight is inversely associated with sex hormone concentrations before menarche in the model unadjusted for time from blood draw until menarche. The in utero environment has long-term influences on the hormonal milieu, which could potentially contribute to breast cancer risk.

  14. The characteristics, experiences and perceptions of naturopathic and herbal medicine practitioners: results from a national survey in New Zealand

    OpenAIRE

    Cottingham, Phillip; Adams, Jon; Vempati, Ram; Dunn, Jill; Sibbritt, David

    2015-01-01

    Background Despite the popularity of naturopathic and herbal medicine in New Zealand there remains limited data on New Zealand-based naturopathic and herbal medicine practice. In response, this paper reports findings from the first national survey examining the characteristics, perceptions and experiences of New Zealand-based naturopaths and herbal medicine practitioners across multiple domains relating to their role and practice. Methods An online survey (covering 6 domains: demographics; pr...

  15. Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

    Science.gov (United States)

    Amano, Hiroshi

    2015-06-26

    This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to late 80s. The background to the author's work and the process by which the technology that enables the growth of GaN and the realization of p-type GaN was established are reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

  17. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  18. Characteristics of bone marrow with dynamic contrast-enhanced MR imaging in patients with haematological malignancies: preliminary results

    International Nuclear Information System (INIS)

    Zhang Lei; Yang Zhenyan; Pitman, A.G.

    2007-01-01

    Objective: To determine whether dynamic contrast-enhanced MR (DCE-MRI) can successfully predict the status of diffusely abnormal bone marrow, and so obviate some bone marrow biopsies done for this indication. Methods: DCE-MRI was performed in 25 patients with proven or known haematological malignancies. Time-signal intensity curves (TIC) analysis was generated from the region of the iliac crest corresponding to the planned biopsy site. Enhancement characteristics were analyzed, including peak enhance ratio (PER), maximum slope (Slope max ), time to peak (TTP), and mean time (MT). The parameters of the marrow histology included cellularity and tumour fraction (TF). Results: The median of PER, Slope max , TTP, and MT in bone marrow with haematological malignancies were 0.27, 0.21 s -1 , 79.08 s and 84.43 s, respectively. The median of DCE-MR variation in bone marrow for hypo-, normal, and hyper-, cellularity groups were PER (0.29, 0.24, 1.15), Slope max (0.20 s -1 , 0.21 s -1 1.28 s -1 ), TTP (96.67 s, 83.49 s, 25.52 s), MT(77.52 s, 86.25 s, 84.34 s), respectively. The median of PER, Slope max , TTP, and MT in bone marrow for the tumor recurrence group and the remission group were 0.32, 0.28 s -1 , 68.66 s, 84.34 s, and 0.20, 0.20 s -1 , 85.85 s, 84.52 s, respectively. There was significant difference for mean PER value between the tumor recurrence group and the remission group (P = 0.02). But there were no significant difference for mean S1ope max , TFP, and MT values between the tumor recurrence group and the remission group (P>0.05). A positive correlation was found between PER and cellularity (r=0.564, P=0.003), between S1ope max and cellularity (r=0.478, P=0.016), between MT and cellularity (r=0.186). A negative correlation was found between TTP and cellularity (r=-0.222). A positive correlation was found between PER and TF (r=0.561, P=0.004), between S1ope max and TF(r=0.318, P=0.121), between MT and TF (r=0.207, P>0.05). A negative correlation was found

  19. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

    Science.gov (United States)

    Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

    2016-11-21

    The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

  20. An All-Solid-State High Repetiton Rate Titanium:Sapphire Laser System For Resonance Ionization Laser Ion Sources

    Science.gov (United States)

    Mattolat, C.; Rothe, S.; Schwellnus, F.; Gottwald, T.; Raeder, S.; Wendt, K.

    2009-03-01

    On-line production facilities for radioactive isotopes nowadays heavily rely on resonance ionization laser ion sources due to their demonstrated unsurpassed efficiency and elemental selectivity. Powerful high repetition rate tunable pulsed dye or Ti:sapphire lasers can be used for this purpose. To counteract limitations of short pulse pump lasers, as needed for dye laser pumping, i.e. copper vapor lasers, which include high maintenance and nevertheless often only imperfect reliability, an all-solid-state Nd:YAG pumped Ti:sapphire laser system has been constructed. This could complement or even replace dye laser systems, eliminating their disadvantages but on the other hand introduce shortcomings on the side of the available wavelength range. Pros and cons of these developments will be discussed.

  1. Refractive index of r-cut sapphire under shock pressure range 5 to 65 GPa

    International Nuclear Information System (INIS)

    Cao, Xiuxia; Li, Jiabo; Li, Jun; Li, Xuhai; Xu, Liang; Wang, Yuan; Zhu, Wenjun; Meng, Chuanmin; Zhou, Xianming

    2014-01-01

    High-pressure refractive index of optical window materials not only can provide information on electronic polarizability and band-gap structure, but also is important for velocity correction in particle-velocity measurement with laser interferometers. In this work, the refractive index of r-cut sapphire window at 1550 nm wavelength was measured under shock pressures of 5–65 GPa. The refractive index (n) decreases linearly with increasing shock density (ρ) for shock stress above the Hugoniot elastic limit (HEL): n = 2.0485 (± 0.0197) − 0.0729 (± 0.0043)ρ, while n remains nearly a constant for elastic shocks. This behavior is attributed to the transition from elastic (below HEL) to heterogeneous plastic deformation (above HEL). Based on the obtained refractive index-density relationship, polarizability of the shocked sapphire was also obtained

  2. Potential Relationship between Season of Birth and Clinical Characteristics in Major Depressive Disorder in Koreans: Results from the CRESCEND Study.

    Science.gov (United States)

    Park, Seon-Cheol; Sakong, Jeong-Kyu; Koo, Bon Hoon; Kim, Jae-Min; Jun, Tae-Youn; Lee, Min-Soo; Kim, Jung-Bum; Yim, Hyeon-Woo; Park, Yong Chon

    2016-05-01

    We aimed to examine the potential relationship between season of birth (SOB) and clinical characteristics in Korean patients with unipolar non-psychotic major depressive disorder (MDD). Using data from the Clinical Research Center for Depression (CRESCEND) study in South Korea, 891 MDD patients were divided into two groups, those born in spring/summer (n=457) and those born in autumn/winter (n=434). Measurement tools comprising the Hamilton Depression Rating Scale, Hamilton Anxiety Rating Scale, Brief Psychiatric Rating Scale, Scale for Suicidal Ideation, Clinical Global Impression of severity, Social and Occupation Functional Assessment Scale, WHO Quality of Life assessment instrument-abbreviated version, Alcohol Use Disorder Identification Test, and Temperament and Character Inventory were used to evaluate depression, anxiety, overall symptoms, suicidal ideation, global severity, social function, quality of life, drinking, and temperament and character, respectively. Using independent t-tests for continuous variables and χ² tests for discrete variables, the clinical characteristics of the two groups were compared. MDD patients born in spring/summer were on average younger at onset of first depressive episode (t=2.084, p=0.038), had greater loss of concentration (χ²=4.589, p=0.032), and were more self-directed (t=2.256, p=0.025) than those born in autumn/winter. Clinically, there was a trend for the MDD patients born in spring/summer to display the contradictory characteristics of more severe clinical course and less illness burden; this may have been partly due to a paradoxical effect of the 5-HT system.

  3. On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Voronenkov, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sheremet, I. A. [Financial University under the Government of the Russian Federation (Russian Federation); Shreter, Y. G., E-mail: y.shreter@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

  4. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  5. Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

    Science.gov (United States)

    Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

    2017-05-01

    Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

  6. Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

    2014-09-30

    This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

  7. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    Energy Technology Data Exchange (ETDEWEB)

    Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

    1996-02-11

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

  8. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    International Nuclear Information System (INIS)

    Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

    1996-01-01

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

  9. A phase stabilized and pulse shaped Ti:Sapphire oscillator-amplifier laser system for the LCLS rf photoinjector

    International Nuclear Information System (INIS)

    Kotseroglou, T.; Alley, R.; Clendenin, J.; Fisher, A.; Frisch, J.

    1998-04-01

    The authors have designed a laser system for the Linac Coherent Light Source rf photoinjector consisting of a Ti:Sapphire oscillator and 2 amplifiers using Chirped Pulse Amplification. The output after tripling will be 0.5 mJ tunable UV pulses at 120 Hz, with wavelength around 260 nm, pulsewidth of 10 ps FWHM and 200 fs rise and fall times. Amplitude stability is expected to be 1% rms in the UV and timing jitter better than 500 fs rms

  10. A comparison of expectations and impressions of ethical characteristics of dentists: results of a community primary care survey.

    Science.gov (United States)

    Reid, Kevin; Humeniuk, Katherine M; Hellyer, Joan Henriksen; Thorsteinsdottir, Bjorg; Tilburt, Jon C

    2014-08-01

    To better define potential challenges in dental professional ethics, the authors gathered data regarding patients' characterizations of an ideal dentist and compared them with their impressions of dentists in general. The authors invited 500 consecutively seen primary care patients at an academic medical center to participate in the study. Participants completed a 32-item survey assessing key domains of ethical characteristics of health care professionals: trustworthiness, honesty, beneficence, nonmaleficence, respect for autonomy, empathy, compassion, patience, courage, humility and dedication. The authors used the McNemar paired t test to compare respondents' ratings of ideal dentists with their ratings of dentists in general. Two hundred eight-five patients returned completed surveys, for a response rate of 57 percent. The authors found statistically significant differences between ideal and perceived characteristics in all but one domain. The area of greatest difference related to the domain of trustworthiness (that is, dentists should not "propose unnecessary treatments just so they can make money"). For this survey item, 98 percent of patients reported that it was very or extremely important, but only 57 percent of respondents moderately or strongly agreed that dentists in general were engaging in this practice (P dental profession and their actual impressions of dentists in general. Addressing these discrepancies may be crucial if dentistry is to continue to enjoy the public's trust.

  11. Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

    2015-10-30

    Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

  12. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  13. Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

    Science.gov (United States)

    Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

    2018-01-01

    Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

  14. High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

    Science.gov (United States)

    Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

    2018-03-01

    Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

  15. Airborne particulate concentration during laser hair removal: A comparison between cold sapphire with aqueous gel and cryogen skin cooling.

    Science.gov (United States)

    Ross, Edward V; Chuang, Gary S; Ortiz, Arisa E; Davenport, Scott A

    2018-04-01

    High concentrations of sub-micron nanoparticles have been shown to be released during laser hair removal (LHR) procedures. These emissions pose a potential biohazard to healthcare workers that have prolonged exposure to LHR plume. We sought to demonstrate that cold sapphire skin cooling done in contact mode might suppress plume dispersion during LHR. A total of 11 patients were recruited for laser hair removal. They were treated on the legs and axilla with a 755 or 1064 nm millisecond-domain laser equipped with either (i) cryogen spray (CSC); (ii) refrigerated air (RA); or (iii) contact cooling with sapphire (CC). Concentration of ultrafine nanoparticles <1 μm were measured just before and during LHR with the three respective cooling methods. For contact cooling (CC), counts remained at baseline levels, below 3,500 parts per cubic centimeter (ppc) for all treatments. In contrast, the CSC system produced large levels of plume, peaking at times to over 400,000 ppc. The CA cooled system produced intermediate levels of plume, about 35,000 ppc (or about 10× baseline). Cold Sapphire Skin cooling with gel suppresses plume during laser hair removal, potentially eliminating the need for smoke evacuators, custom ventilation systems, and respirators during LHR. Lasers Surg. Med. 50:280-283, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  16. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

    International Nuclear Information System (INIS)

    Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

    2008-01-01

    This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Effects of gamma radiation on sprouting turmeric rhizome and the quality and resulting characteristics in powdered form

    Energy Technology Data Exchange (ETDEWEB)

    Peret-Almeida, Lucia [UNI-BH, Centro Universitario de Belo Horizonte, MG (Brazil); Junqueira, Roberto Goncalves; Gloria, Maria Beatriz A. [Universidade Federal de Minas Gerais (FAFAR/UFMG), Belo Horizonte, MG (Brazil). Fac. de Farmacia

    2008-07-01

    Rhizomes were submitted to doses of 0.00, 0.05, 0.10 and 0.15 kGy and stored at 26 {+-} 1 deg C and 85% relative humidity for 135 days. In 45 day intervals samples were collected for analysis of the rhizomes and processed into ground turmeric. The higher the dose the longer the time required for sprouting. At 0.15 kGy there was no sprouting up to 135 days of storage, however callus started to appear. The levels of curcuminoid pigments in ground turmeric were not affected by irradiation dose; however they varied with storage time. The CIE L{sup *}a{sup *}b{sup *} color characteristics of ground turmeric were not affected by radiation dose, but changed with storage time, except for 0.15 kGy. (author)

  19. Effects of gamma radiation on sprouting turmeric rhizome and the quality and resulting characteristics in powdered form

    International Nuclear Information System (INIS)

    Peret-Almeida, Lucia; Junqueira, Roberto Goncalves; Gloria, Maria Beatriz A.

    2008-01-01

    Rhizomes were submitted to doses of 0.00, 0.05, 0.10 and 0.15 kGy and stored at 26 ± 1 deg C and 85% relative humidity for 135 days. In 45 day intervals samples were collected for analysis of the rhizomes and processed into ground turmeric. The higher the dose the longer the time required for sprouting. At 0.15 kGy there was no sprouting up to 135 days of storage, however callus started to appear. The levels of curcuminoid pigments in ground turmeric were not affected by irradiation dose; however they varied with storage time. The CIE L * a * b * color characteristics of ground turmeric were not affected by radiation dose, but changed with storage time, except for 0.15 kGy. (author)

  20. Epidemiological characteristics of human brucellosis in Hamadan Province during 2009-2015: results from the National Notifiable Diseases Surveillance System.

    Science.gov (United States)

    Nematollahi, Shahrzad; Ayubi, Erfan; Karami, Manoochehr; Khazaei, Salman; Shojaeian, Masoud; Zamani, Reza; Mansori, Kamyar; Gholamaliee, Behzad

    2017-08-01

    Human brucellosis and recurrent brucellosis is an ever-increasing public health concern, especially in endemic areas like Iran. Nevertheless, little is known regarding the epidemiology and determinants of recurrent brucellosis. Therefore, the objective of this study was to investigate epidemiological patterns and potential determinants of recurrent brucellosis in Hamadan Province during the years 2009-2015. Data on reported cases of new and recurrent brucellosis from 2009 to 2015 were obtained from the provincial Notifiable Diseases Surveillance System at Hamadan University of Medical Sciences. Incidence rates per 100000 were estimated at the county level. Binary logistic regression was used to estimate the effects of background characteristics and recurrent brucellosis. The power of discrimination of the model for recurrent brucellosis was assessed using the area under the curve (AUC). Among 7318 brucellosis cases, the total frequency (%) of recurrent cases was 472 (6.45%). The rate of recurrent brucellosis was higher in females, people aged 50 years and over, people with a history of consuming unpasteurized dairy products with no history of contact with animals, and in the winter season. Multivariable logistic regression analysis showed that female sex (adjusted odds ratio (AOR) 1.36, 95% confidence interval (CI) 1.13-1.65), age ≥55 years (AOR 4.15, 95% CI 2.32-7.42), consumption of unpasteurized dairy products (AOR 1.16, 95% CI 0.96-1.40), and winter season (AOR 1.32, 95% CI 1.03-1.71) are potential risk factors for recurrent brucellosis. The final model that involved all the determinants showed moderate discrimination (AUC 0.61). Female sex, older age, and winter months were found to be significant determinants of recurrent human brucellosis. Enhanced surveillance systems with an emphasis on these population characteristics will allow effective preventive and protective measures to be implemented and might alleviate the recurrence of brucellosis in the

  1. Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging

    Science.gov (United States)

    Kim, Hokwon; Dumcenco, Dumitru; Fregnaux, Mathieu; Benayad, Anass; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier; Lanes Group, Epfl Team; Leti, Cea Team

    The electronic band structure evaluation of two-dimensional metal dichalcogenides is critical as the band structure can be greatly influenced by the film thickness, strain, and substrate. Here, we performed a direct measurement of the band structure of as-grown monolayer MoS2 on single crystalline sapphire by reciprocal-space photoelectron emission microscopy with a conventional laboratory ultra-violet He I light source. Arrays of gold electrodes were deposited onto the sample in order to avoid charging effects due to the insulating substrate. This allowed the high resolution mapping (ΔE = 0.2 eV Δk = 0.05 Å-1) of the valence states in momentum space down to 7 eV below the Fermi level. The high degree of the epitaxial alignment of the single crystalline MoS2 nuclei was verified by the direct momentum space imaging over a large area containing multiple nuclei. The derived values of the hole effective mass were 2.41 +/-0.05 m0 and 0.81 +/-0.05 m0, respectively at Γ and K points, consistent with the theoretical values of the freestanding monolayer MoS2 reported in the literature. HK acknowledges the french CEA Basic Technological Research program (RTB) for funding.

  2. Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

    International Nuclear Information System (INIS)

    Kulinich, S.A.; Yoshida, T.; Yamamoto, H.; Terashima, K.

    2003-01-01

    We report the deposition of LiNb 1-x Ta x O 3 (0≤x≤1) films on (001) sapphire substrates in soft vacuum using a radio frequency thermal plasma. The growth rate, crystallinity, c-axis orientation, and surface roughness were examined as functions of substrate temperature, precursor feed rate, and substrate surface condition. The film Nb/Ta ratio was well controlled by using an appropriate uniform mixture of lithium-niobium and lithium-tantalum alkoxide solutions. The epitaxy and crystallinity of the films were much improved when the film growth rate was raised from 20 to 180-380 nm/min, where the films with the (006) rocking curve full width at half maximum values as low as 0.12 deg. -0.2 deg. could be produced. The film roughness could be reduced by using a liquid precursor with higher metal concentrations, achieving the root-mean-square value on the order of 5 nm. The refractive indices of the films are in good correspondence with their composition and crystallinity

  3. Optical properties tailoring by high fluence implantation of Ag ions on sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Silva, R.C. da; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Alves, E.

    2006-01-01

    Optical and structural properties of single crystalline α-Al 2 O 3 were changed by the implantation of high fluences of Ag ions. Colourless transparent (101-bar 0) sapphire samples were implanted at room temperature with 160keV silver ions and fluences up to 1x10 17 Agcm -2 . Surface amorphization is observed at the fluence of 6x10 16 Agcm -2 . Except for the lower fluences (below 6x10 16 Agcm -2 ) the optical absorption spectra reveal the presence of a band peaking in the region 450-500nm, depending on the retained fluence. This band has been attributed to the presence of silver colloids, being thus 1x10 16 Agcm -2 below the threshold for colloid formation during the implantation. Annealing in oxidizing atmosphere promotes the recrystallization along with segregation of Ag followed by loss through evaporation. Recrystallization is retarded for annealing in reducing atmosphere and the Ag profile displays now a double peak structure after evaporation. Playing with the implantation fluence, temperature and annealing atmosphere controllable shifts of the position and intensity of the optical bands in the visible were achieved

  4. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    International Nuclear Information System (INIS)

    Schwinkendorf, Jan-Patrick

    2012-05-01

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  5. α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

    Science.gov (United States)

    Roberts, J. W.; Jarman, J. C.; Johnstone, D. N.; Midgley, P. A.; Chalker, P. R.; Oliver, R. A.; Massabuau, F. C.-P.

    2018-04-01

    α-Ga2O3 is a metastable phase of Ga2O3 of interest for wide bandgap engineering since it is isostructural with α-In2O3 and α-Al2O3. α-Ga2O3 is generally synthesised under high pressure (several GPa) or relatively high temperature (∼500 °C). In this study, we report the growth of α-Ga2O3 by low temperature atomic layer deposition (ALD) on sapphire substrate. The film was grown at a rate of 0.48 Å/cycle, and predominantly consists of α-Ga2O3 in the form of (0001) -oriented columns originating from the interface with the substrate. Some inclusions were also present, typically at the tips of the α phase columns and most likely comprising ε-Ga2O3. The remainder of the Ga2O3 film - i.e. nearer the surface and between the α-Ga2O3 columns, was amorphous. The film was found to be highly resistive, as is expected for undoped material. This study demonstrates that α-Ga2O3 films can be grown by low temperature ALD and suggests the possibility of a new range of ultraviolet optoelectronic and power devices grown by ALD. The study also shows that scanning electron diffraction is a powerful technique to identify the different polymorphs of Ga2O3 present in multiphase samples.

  6. A sapphire monolithic differential accelerometer as core sensor for gravity gradiometric geophysical instrumentation

    Directory of Open Access Journals (Sweden)

    F. Mango

    2006-06-01

    Full Text Available Gradiometric gravimetry is a survey technique widely used in geological structure investigation. This work demonstrates the feasibility of a new class of low frequency accelerometers for geodynamics studies and space applications. We present the design features of a new low noise single-axis differential accelerometer; the sensor is suitable to be used in a Gravity Gradiometer (GG system for land geophysical survey and gravity gradient measurements. A resolution of 1 Eötvös (1 Eö=10?9s?2 at one sample per second is achievable in a compact, lightweight (less than 2 kg portable instrument, operating at room temperature. The basic components of the sensor are two identical rigidly connected accelerometers separated by a 15-cm baseline vector and the useful signal is extracted as the subtraction of the two outputs, by means of an interferometric microwave readout system. The structure will be engraved in a monocrystal of sapphire by means of Computer-Numerically-Controlled (CNC ultrasonic machining: the material was chosen because of its unique mix of outstanding mechanical and dielectric properties.

  7. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

    Science.gov (United States)

    Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

    2017-12-01

    Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

  8. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Schwinkendorf, Jan-Patrick

    2012-08-15

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  9. The characteristics, experiences and perceptions of naturopathic and herbal medicine practitioners: results from a national survey in New Zealand.

    Science.gov (United States)

    Cottingham, Phillip; Adams, Jon; Vempati, Ram; Dunn, Jill; Sibbritt, David

    2015-04-10

    Despite the popularity of naturopathic and herbal medicine in New Zealand there remains limited data on New Zealand-based naturopathic and herbal medicine practice. In response, this paper reports findings from the first national survey examining the characteristics, perceptions and experiences of New Zealand-based naturopaths and herbal medicine practitioners across multiple domains relating to their role and practice. An online survey (covering 6 domains: demographics; practice characteristics; research; integrative practice; regulation and funding; contribution to national health objectives) was administered to naturopaths and herbal medicine practitioners. From a total of 338 naturopaths and herbal medicine practitioners, 107 responded providing a response rate of 32%. Data were statistically analysed using STATA. A majority of the naturopaths and herbal medicine practitioners surveyed were female (91%), and aged between 45 and 54 years. Most practiced part-time (64%), with practitioner caseloads averaging 8 new clients and over 20 follow-up clients per month. Our analysis shows that researched information impacts upon and is useful for naturopaths and herbal medicine practitioners to validate their practices. However, the sources of researched information utilised by New Zealand naturopaths and herbal medicine practitioners remain variable, with many sources beyond publications in peer-reviewed journals being utilised. Most naturopathic and herbal medicine practitioners (82%) supported registration, with statutory registration being favoured (75%). Integration with conventional care was considered desirable by the majority of naturopaths and herbal medicine practitioners surveyed (83%). Naturopaths and herbal medicine practitioners feel that they contribute to several key national health objectives, including: improved nutrition (93%); increased physical activity (85%); reducing incidence and impact of CVD (79%); reducing incidence and impact of cancer (68

  10. Characteristics and sources of nitrous acid in an urban atmosphere of northern China: Results from 1-yr continuous observations

    Science.gov (United States)

    Li, Dandan; Xue, Likun; Wen, Liang; Wang, Xinfeng; Chen, Tianshu; Mellouki, Abdelwahid; Chen, Jianmin; Wang, Wenxing

    2018-06-01

    Nitrous acid (HONO) is a key reservoir of the hydroxyl radical (OH) and plays a central role in the atmospheric chemistry. To understand the sources and impact of HONO in the polluted atmosphere of northern China, continuous measurements of HONO and related parameters were conducted from September 2015 to August 2016 at an urban site in Ji'nan, the capital city of Shandong province. HONO showed well-defined seasonal and diurnal variation patterns with clear wintertime and nighttime concentration peaks. Elevated HONO concentrations (e.g., over 5 ppbv) were frequently observed with a maximum value of 8.36 ppbv. The HONO/NOX ratios of direct vehicle emissions varied in the range of 0.29%-0.87%, with a mean value of 0.53%. An average NO2-to-HONO nighttime conversion frequency (khet) was derived to be 0.0068 ± 0.0045 h-1 from 107 HONO formation cases. A detailed HONO budget analysis suggests an unexplained daytime missing source of 2.95 ppb h-1 in summer, which is about seven times larger than the homogeneous reaction of NO with OH. The effect of HONO on OH production was also quantified. HONO photolysis was the uppermost source of local OH radical throughout the daytime. This study provides the year-round continuous record of ambient HONO in the North China Plain, and offers some insights into the characteristics, sources and impacts of HONO in the polluted atmospheres of China.

  11. Nupec thermal hydraulic test to evaluate post-DNB characteristics for PWR fuel assemblies (1. general test plan and results)

    International Nuclear Information System (INIS)

    Norio, Kono; Kenji, Murai; Kaichiro, Misima; Takayuki, Suemura; Yoshiei, Akiyama; Keiichi, Hori

    2001-01-01

    In the present thermal hydraulic design of Pressurized Water Reactor (PWR), a departure from nucleate boiling (DNB) under anticipated transient conditions is not allowed. However, it is recognized that the DNB dose not cause a fuel rod failure immediately, and a suitable reactor trip can prevent the core from severe damages. If the fuel rod temperature under the post-DNB conditions can be accurately evaluated, the potentially existing margin in the present design method will be quantitatively assessed. To establish the heat transfer evaluation method on post-DNB event for PWR thermal hydraulic design, Nuclear Power Engineering Corporation (NUPEC) started a program, NUPEC Thermal Hydraulic Test to Evaluate Post-DNB Characteristics for PWR Fuel Assemblies (NUPEC-TH-P), in 1995 (hereinafter the year means fiscal year) under the sponsorship of Ministry of Economy, Trade and industry (METI). This program is now under going until 2001. This paper is to show the overall plan and the status of NUPEC-TH-P. (authors)

  12. 16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Misuse of the words âruby,â âsapphire,â... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc. (a) It is unfair or deceptive to use the unqualified words “ruby,” “sapphire...

  13. Association between family history of mood disorders and clinical characteristics of bipolar disorder: results from the Brazilian bipolar research network.

    Science.gov (United States)

    Berutti, Mariangeles; Nery, Fabiano G; Sato, Rodrigo; Scippa, Angela; Kapczinski, Flavio; Lafer, Beny

    2014-06-01

    To compare clinical characteristics of bipolar disorder (BD) in patients with and without a family history of mood disorders (FHMD) in a large sample from the Brazilian Research Network of Bipolar Disorders. Four-hundred eighty-eight DSM-IV BD patients participating in the Brazilian Research Network of Bipolar Disorders were included. Participants were divided between those with FHMD (n=230) and without FHMD (n=258). We compared these two groups on demographic and clinical variables and performed a logistic regression to identify which variables were most strongly associated with positive family history of mood disorders. BD patients with FHMD presented with significantly higher lifetime prevalence of any anxiety disorder, obsessive-compulsive disorder, social phobia, substance abuse, and were more likely to present history of suicide attempts, family history of suicide attempts and suicide, and more psychiatric hospitalizations than BD patients without FHMD. Logistic regression showed that the variables most strongly associated with a positive FHMD were any comorbid anxiety disorder, comorbid substance abuse, and family history of suicide. Cross-sectional study and verification of FHMD by indirect information. BD patients with FHMD differ from BD patients without FHMD in rates of comorbid anxiety disorder and substance abuse, number of hospitalizations and suicide attempts. As FHMD is routinely assessed in clinical practice, these findings may help to identify patients at risk for particular manifestations of BD and may point to a common, genetically determined neurobiological substrate that increases the risk of conditions such as comorbidities and suicidality in BD patients. Copyright © 2014 Elsevier B.V. All rights reserved.

  14. Characteristics of patients receiving midwife-led prenatal care in Canada: results from the Maternity Experiences Survey (MES).

    Science.gov (United States)

    Abdullah, Peri; Gallant, Sabrina; Saghi, Naseem; Macpherson, Alison; Tamim, Hala

    2017-06-02

    The aim of this study was to determine the characteristics of women in Canada who received care from a midwife during their prenatal period. The findings of this study were drawn from the Maternity Experiences Survey (MES), which was a cross-sectional survey that assessed the experiences of women who gave birth between November 2005 and May 2006. The main outcome variable for this study was the prenatal care provider (i.e. midwife versus other healthcare providers). Demographic, socioeconomic, as well as health and pregnancy factors were evaluated using bivariate and multivariate models of logistic regression. A total of 6421 participants were included in this analysis representing a weighted total of 76,508 women. The prevalence of midwife-led prenatal care was 6.1%. The highest prevalence of midwife-led prenatal care was in British Columbia (9.8%), while the lowest prevalence of midwife-led prenatal care was 0.3% representing the cumulative prevalence in Nova Scotia, Prince Edward Island, Newfoundland and Labrador, New Brunswick, Saskatchewan, and Yukon. Factors showing significant association with midwife-led prenatal care were: Aboriginal status (OR = 2.26, 95% CI: 1.41-3.64), higher education with bachelor and graduate degree attainment having higher ORs when compared to high-school or less (OR = 2.71, 95% CI: 1.71-4.31 and OR = 3.17, 95% CI: 1.81-5.55, respectively), and alcohol use (OR = 1.63, 95% CI: 1.17-2.26). Age, marital status, immigrant status, work during pregnancy, household income, previous pregnancies, perceived health, maternal Body Mass Index (BMI), and smoking during the last 3 months of pregnancy were not significantly associated with midwife care. In general, women who were more educated, have aboriginal status, and/or are alcohol drinkers were more likely to receive care from midwives. Since MES is the most recent resource that includes information about national midwifery utilization, future studies can provide more up

  15. Steady state characteristics of a tilting pad journal bearing with controllable lubrication: Comparison between theoretical and experimental results

    DEFF Research Database (Denmark)

    Cerda Varela, Alejandro Javier; Nielsen, Bo Bjerregaard; Santos, Ilmar

    2013-01-01

    direction. The modification of the injection pressure enables to modify the bearing static and dynamic properties according to the operational needs. The results presented are obtained using a theoretical model, which considers all the effects that determine the bearing behavior (controllable......This paper is aimed at presenting results regarding the static and thermal behavior of a tilting-pad journal bearing operating under controllable regime. The bearing is rendered controllable by injecting high pressure oil into the clearance using holes drilled across the bearing pads in the radial...... elastothermohydrodynamic lubrication regime), as well as using a test rig designed and built to this effect. The comparison between experimental and theoretical results provides solid ground to determine the accuracy of the available model for the the prediction of the steady-state behavior of the tilting-pad bearing...

  16. Design, methods, baseline characteristics and interim results of the Catheter Sampled Blood Archive in Cardiovascular Diseases (CASABLANCA study

    Directory of Open Access Journals (Sweden)

    Hanna K. Gaggin

    2014-11-01

    Conclusions: The CASABLANCA study will examine the role of novel biomarkers and metabolomics for predicting a wide range of cardiovascular, neurologic, and renal complications in patients undergoing angiography. Full results are expected in the latter half of 2014 (ClinicalTrials.Gov # NCT00842868.

  17. PREDICTIVE CONTRIBUTION OF MORPHOLOGICAL CHARACTERISTICS AND MOTOR ABILITIES ON THE RESULT OF RUNNING THE 60m HURDLES IN BOYS AGED 12 - 13 YEARS

    Directory of Open Access Journals (Sweden)

    Zana Bujak

    2014-06-01

    Full Text Available The subject of this study is to determine predictive contributions of morphological characteristics and motor abilities on the 60m hurdles, with an aim to form a group of easily applicable field tests so as to identify boys who are talented in hurdl e racing . The subject sample of this study was comprised of 60 boys aged 12 - 13. The variable sample consisted of a 60m hurdles criterion variable and a set of 13 p re dictor variables comprising of morphological characteristics, speed - strength abilities and the subjects' coordina tion qualities . Applying the regression analysis , the predictive contribution of a complete variable s et of morpholog ical characteristics and motor abilities was determined as an above average statistical significance, influencing 60m hurdle outcome. The greatest individual statistically significant predictive contribution was achieved by the variables of speed - strength quality assessment: 20m flying start r ace result with a standing long jump; and only one variable from the field of morphological characteristics: the shin length. The results support the following conclusion: the two specific variables of speed - strength quality, and 20m flying start race results along with standing long jump , can be relevant predictors of successful outcome in hurdle races .

  18. Effect of Micro Electrical Discharge Machining Process Conditions on Tool Wear Characteristics: Results of an Analytic Study

    DEFF Research Database (Denmark)

    Puthumana, Govindan; P., Rajeev

    2016-01-01

    Micro electrical discharge machining is one of the established techniques to manufacture high aspect ratio features on electrically conductive materials. This paper presents the results and inferences of an analytical study for estimating theeffect of process conditions on tool electrode wear...... characteristicsin micro-EDM process. A new approach with two novel factors anticipated to directly control the material removal mechanism from the tool electrode are proposed; using discharge energyfactor (DEf) and dielectric flushing factor (DFf). The results showed that the correlation between the tool wear rate...... (TWR) and the factors is poor. Thus, individual effects of each factor on TWR are analyzed. The factors selected for the study of individual effects are pulse on-time, discharge peak current, gap voltage and gap flushing pressure. The tool wear rate decreases linearly with an increase in the pulse on...

  19. Characteristics of ejecta and alluvial deposits at Meteor Crater, Arizona and Odessa Craters, Texas: Results from ground penetrating radar

    Science.gov (United States)

    Grant, J. A.; Schultz, P. H.

    1991-01-01

    Previous ground penetrating radar (GRP) studies around 50,000 year old Meteor Crater revealed the potential for rapid, inexpensive, and non-destructive sub-surface investigations for deep reflectors (generally greater than 10 m). New GRP results are summarized focusing the shallow sub-surfaces (1-2 m) around Meteor Crater and the main crater at Odessa. The following subject areas are covered: (1) the thickness, distribution, and nature of the contact between surrounding alluvial deposits and distal ejecta; and (2) stratigraphic relationships between both the ejecta and alluvium derived from both pre and post crater drainages. These results support previous conclusions indicating limited vertical lowering (less than 1 m) of the distal ejecta at Meteor Crater and allow initial assessment of the gradational state if the Odessa craters.

  20. Effect of lime addition during sewage sludge treatment on characteristics of resulting SSA when it is used in cementitious materials.

    Science.gov (United States)

    Vouk, D; Nakic, D; Štirmer, N; Baricevic, A

    2017-02-01

    Final disposal of sewage sludge is important not only in terms of satisfying the regulations, but the aspect of choosing the optimal wastewater treatment technology, including the sludge treatment. In most EU countries, significant amounts of stabilized and dewatered sludge are incinerated, and sewage sludge ash (SSA) is generated as a by product. At the same time, lime is one of the commonly used additives in the sewage sludge treatment primarily to stabilize the sludge. In doing so, the question arose how desirable is such addition of lime if the sludge is subsequently incinerated, and the generated ash is further used in the production of cementitious materials. A series of mortars were prepared where 10-20% of the cement fraction was replaced by SSA. Since all three types of analyzed SSA (without lime, with lime added during sludge stabilization and with extra lime added during sludge incineration) yielded nearly same results, it can be concluded that if sludge incineration is accepted solution, lime addition during sludge treatment is unnecessary even from the standpoint of preserving the pozzolanic properties of the resulting SSA. Results of the research carried out on cement mortars point to the great possibilities of using SSA in concrete industry.

  1. Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN.

    Science.gov (United States)

    Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian; Han, Jung

    2016-12-01

    In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

  2. Weight of Production of Emeralds, Rubies, Sapphires, and Tanzanite from 1995 Through 2005

    Science.gov (United States)

    Yager, Thomas R.; Menzie, W. David; Olson, Donald W.

    2008-01-01

    U.S. Geological Survey (USGS) historically has not attempted to report comprehensive world production of gemstones on a country basis. This was because estimation of gemstone production is inherently difficult due to the fragmentary nature of the industry, the lack of governmental oversight or reporting in many countries where colored gemstones are mined, and the wide variation in quality between individual gemstones. Unlike diamonds, which, with the exception of the alluvial stones of West Africa, are mainly produced by large international mining companies and evaluated, cut, and marketed through a highly developed pricing structure and complex commercial arrangements, colored gemstones are mainly mined by individuals or small companies and have less developed evaluation and marketing arrangements. The trading centers for colored gems are smaller and less well known than the diamond centers. Colored gemstones, like alluvial diamonds, have the potential to be used to fund civil conflicts and other illegal activities, and because trade in colored gemstones is less organized than that of diamonds, they offer less opportunity for effective regulation of their trade. And, like diamond, until the recent advent of the Kimberley Process no generally accepted estimates of colored gemstone production globally or by producing country have existed. The present paper is a first attempt to develop production statistics for the three precious gems -emeralds, rubies, and sapphires - and tanzanite tanzanite, a semi-precious gem. The data consist of the weight of production of each of the gemstones from 1995 through 2005. Preliminary data on the weights of gemstone production were presented as a poster session at the Gemological Institute of America's Gemological Research Conference in San Diego, CA, in 2006, and as a published abstract (Yager, 2006) in an attempt to gather response to the estimates. The USGS continues to welcome information and suggestions that would improve the

  3. Clinical And Morphological Androgenic Status Characteristics At Children Suffering From Hypospadias And Its Influence On Results Of Surgical Correction

    Directory of Open Access Journals (Sweden)

    F.K. Napolnikov

    2009-09-01

    Full Text Available The goal of this article is to estimate the androgenic status and analyze its influence on the surgical treatment of hypospadias. From 2000 till 2008 there were 209 children under treatment, whose age varied from 8 months till 15 years old (average age — 4,5+ 1,5. 49 patients were subjected to clinical, humoral and morphological study. Preoperational preparation was carried out by testosterone medications. The comparison group consisted of 10 boys with cicatricial phimosis. The patients with the medium and back forms of hypospadias suffered from the androgenic deficit characterized by proximal level of meatus ectopia, diminution of penis length and prostate volume, decrease of blood vessels in deep layers of penis skin. The testosterone pre-operational medication of patients makes possible to improve the results of surgical correction due to blood supply of plastic material. On the basis of recieved data logistically regressive model has been worked out and the prognosis of results has been estimated

  4. Citrate content of bone for time since death estimation: results from burials with different physical characteristics and known PMI.

    Science.gov (United States)

    Kanz, Fabian; Reiter, Christian; Risser, Daniele U

    2014-05-01

    A recently introduced method to determine the postmortem interval (PMI) based on quantification of the citrate content in bone was applied on the temporal bones and femora of 20 individuals buried in wooden coffins (WO) and body bags (BB), respectively. Concerning known vs. calculated PMI, a significant difference between the temporal and the femur bone samples of the same individuals was observed in the BB group (p = 0.012). In contrast, differences were insignificant for the WO group (p = 0.400). Moreover, similar levels of underestimation of PMIs resulted from the analysis of the femora for both burial groups (p = 0.247). Also, there was consistently less citrate preserved in the flat temporal bones as compared to the femora, indicating that the cortical layer of the long bones should be preferentially employed for citrate-based PMI estimations. The results call for additional research on subsurface-buried and surface-deposited remains to enhance the accuracy of the published PMI equation. © 2014 American Academy of Forensic Sciences.

  5. Characteristics and parameters of family poultry production in Africa. Results of a FAO/IAEA co-ordinated research programme

    International Nuclear Information System (INIS)

    2002-01-01

    One of the tasks of the Joint FAO/IAEA Division of Nuclear Techniques in Food and Agriculture is to promote the use of nuclear techniques for improving disease diagnosis and monitoring disease control programmes in order to optimise animal production in developing countries. An applied research programme was initiated in 1998 with funding from the Regular Budget to promote farmyard poultry production in Africa by developing practical vaccination strategies against Newcastle disease and Gumboro disease in various countries in Africa and monitoring immunity using an ELISA technique. Following initial discussions with experts from various universities and FAO it became clear that in order to improve farmyard poultry production effectively it was essential to initiate a holistic approach. Consequently, it was decided to first collect production data of the existing situation in a standardised fashion, subsequently analyse the production constraints and finally initiate interventions not only by vaccinating poultry but also by introducing improvements in housing, feeding and commercialisation. At the same time a practical and robust ELISA test for detecting antibodies against Newcastle disease was developed at the FAO/IAEA Agriculture and Biotechnology Laboratory in Seibersdorf, Austria. The results of the standardised survey to collect production data of the current situation are reported in the present publication together with an analysis of production constraints, a number of review articles on family poultry production in Africa and a comparative analysis of the results from the various countries

  6. Determination of AC Characteristics of Superconducting Dipole Magnets in the Large Hadron Collider Based on Experimental Results and Simulations

    CERN Document Server

    Ambjørndalen, Sara; Verweij, Arjan

    The Large Hadron Collider (LHC) utilizes high-field superconducting Main Dipole Magnets that bend the trajectory of the beam. The LHC ring is electrically divided into eight octants, each allocating a 7 km chain of 154 Main Dipole Magnets. Dedicated de- tection and protection systems prevent irreversible magnet damage caused by quenches. Quench is a local transition from the superconducting to the normal conducting state. Triggering of such systems, along with other failure scenarios, result in fast transient phenomena. In order to analyze the consequence of such electrical transients and failures in the dipole chain, one needs a circuit model that is validated against measurements. Currently, there exists an equivalent circuit of the Main Dipole Magnet resolved at an aperture level. Each aperture model takes into account the dynamic effects occurring in the magnets, trough a lossy-inductance model and parasitic capacitances to ground. At low frequencies the Main Dipole Magnet behaves as a linear inductor. Ca...

  7. Three-dimensional assembly of tissue-engineered cartilage constructs results in cartilaginous tissue formation without retainment of zonal characteristics.

    Science.gov (United States)

    Schuurman, W; Harimulyo, E B; Gawlitta, D; Woodfield, T B F; Dhert, W J A; van Weeren, P R; Malda, J

    2016-04-01

    Articular cartilage has limited regenerative capabilities. Chondrocytes from different layers of cartilage have specific properties, and regenerative approaches using zonal chondrocytes may yield better replication of the architecture of native cartilage than when using a single cell population. To obtain high seeding efficiency while still mimicking zonal architecture, cell pellets of expanded deep zone and superficial zone equine chondrocytes were seeded and cultured in two layers on poly(ethylene glycol)-terephthalate-poly(butylene terephthalate) (PEGT-PBT) scaffolds. Scaffolds seeded with cell pellets consisting of a 1:1 mixture of both cell sources served as controls. Parallel to this, pellets of superficial or deep zone chondrocytes, and combinations of the two cell populations, were cultured without the scaffold. Pellet cultures of zonal chondrocytes in scaffolds resulted in a high seeding efficiency and abundant cartilaginous tissue formation, containing collagen type II and glycosaminoglycans (GAGs) in all groups, irrespective of the donor (n = 3), zonal population or stratified scaffold-seeding approach used. However, whereas total GAG production was similar, the constructs retained significantly more GAG compared to pellet cultures, in which a high percentage of the produced GAGs were secreted into the culture medium. Immunohistochemistry for zonal markers did not show any differences between the conditions. We conclude that spatially defined pellet culture in 3D scaffolds is associated with high seeding efficiency and supports cartilaginous tissue formation, but did not result in the maintenance or restoration of the original zonal phenotype. The use of pellet-assembled constructs leads to a better retainment of newly produced GAGs than the use of pellet cultures alone. Copyright © 2013 John Wiley & Sons, Ltd.

  8. Comparative characteristics of the results of fractional photothermolysis used for neck skin of women in different age groups

    Directory of Open Access Journals (Sweden)

    L. V. Kirsanova

    2014-01-01

    Full Text Available The purpose of this research is scientific rationale for fractional photothermolysis usage to correct age-related changes of neck skin of women in different age groups. Materials and Methods. A comparative study of the results for fractional photothermolysis (FP treatment in order to correct involutional changes in neck skin of 60 women in different age groups has been carried out (first group - 40-49 years old, second group - 50-60 years old. Skin moisture, its smoothness (relief, the width of the mouths of the pilosebaceous unit, the severity of pigmentation, the depth and width of wrinkles before the treatment, 1 week after and 1 month after the procedure have been investigated. Main results. After a week of having FP it affected all investigated functional skin parameters more in the 2nd age group than in the 1st one. Decreasing in moisture and smoothness of the skin, increasing the width and the depth of wrinkles, pores and pigmentation width have been marked. In one month there was more significant positive dynamics in parameters of smoothness, wrinkles width in the 2nd group (p -8, p -7 than in the 1st group (p = 0.002, p -5. Hydration of the skin, the width of the mouths of the pilosebaceous unit, the depth of wrinkles and pigmentation changed more significantly among patients in group 1 (p -7, p = 0.001, p -5, p -8. Conclusion. Skin functional parameters of patients from the first group deteriorated significantly less in comparison with the second group one week after PF procedure was carried out. 1 month after the 1st group is indicated with significant improvement in moisture, the width of the pilosebaceous unit, the depth of wrinkles and pigmentation, and the 2nd group is indicated with improvement of smoothness and width of wrinkles. The differences discovered in skin condition dynamics in different age groups should be considered when planning the aesthetic outcome of FP procedure.

  9. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Miyoshi, Makoto, E-mail: miyoshi.makoto@nitech.ac.jp; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Mizuno, Masaya [Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Soga, Tetsuo [Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)

    2015-08-17

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.

  10. Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

    International Nuclear Information System (INIS)

    Miyoshi, Makoto; Arima, Yukinori; Kubo, Toshiharu; Egawa, Takashi; Mizuno, Masaya; Soga, Tetsuo

    2015-01-01

    Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO 2 /Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO 2 /Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO 2 /Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm 2 /V s for electrons and 880 cm 2 /V s for holes, respectively

  11. Partial Results Regarding Exploitation Characteristics, Morpho-Productive Traits for Saanen Breed Goats in South of the Country

    Directory of Open Access Journals (Sweden)

    Iulian Vlad

    2012-10-01

    Full Text Available Over about 92% from national goat livestock come from local unameliorated breeds, namely Carpathian breed whichis traditionally exploited in a mixed way next to sheep in a proportion of over 65% from the breed total.Expectations towards a qualitative and quantitative production led to pretty important imports for specialized breedslike the Saanen one, from communitary states, during the last 10 years.This study presents the results of someresearch started since the last semestre of the previous year on some goat livestock from Saanen breed, livestockwhich was brought to the Garbovi farm, Ialomita county. The livestock presents the following morpho-productivetraits, such as: weight 57.375±0.23 Kg as an average, back length 67.47±0,38cm, crupper length 69.25±0,41 cm,oblique body length 70,98±0,38 cm, thoracical perimeter 89.17cm±0.32 cm, resulting a dolicomorphe body structure.The medium milk production in is of 2.19 l/head/day during the stalling months November-February, with average ofNovember 58.05±1.77 l.,December 70.47±2,07 l.,January 92.30±2.93 l., and February 45.10±1.38 l.,only during thefirst 120 days, and the chemical composition of the main constituent parts: Dry matter nonfat 9.3%, protein 3.53%,fat 4.02%, a significant quantitative and qualitative gain of goat milk especially when the local breeds don’t yieldthem.The females prolificity is of 128%, being a lot below the breed average 150-170% in comparison with theaverage proven by the breed but also in comparison with the unameliorated breeds, this aspect being also a basicalelement in selection, next to the milk quantitative aspect. The gain recorded for goat youth over the 90 days iscomprised between 127g, 198g, 122g/day of males and 109g, 173g, 106 g/day of females, during the whole periodwhich was much over the average of Carpathian breed. Shortage of some agricultural policies on breed, of trainedstaff in the farm,speciality information concerning the exploitation of

  12. Clinicopathologic characteristics and prognostic factors of ovarian fibrosarcoma: the results of a multi-center retrospective study

    Directory of Open Access Journals (Sweden)

    Liao Ling-Min

    2010-10-01

    Full Text Available Abstract Background Ovarian fibrosarcomas are very rare tumors, and therefore, few case studies have evaluated the prognostic factors of this disease. To our knowledge, this study represents the largest study to evaluate the clinical and pathologic factors associated with ovarian fibrosarcoma patients. Methods Thirty-one cases of ovarian fibrosarcoma were retrospectively reviewed, which included medical records for eight patients, and 23 published case reports from 1995 through 2009. Patient treatment regimens included total hysterectomy with bilateral adnexectomy and an omentectomy (BAO (n = 9, oophorectomy (OR (n = 8, chemotherapy (CT (n = 1, BAO followed by chemotherapy (BAO+CT (n = 11, BAO followed by radiotherapy (BAO+RT (n = 1, and oophorectomy followed by radiotherapy (OR + RT (n = 1. Results The patients of this cohort were staged according to the guidelines of the Federation of Gynecology and Obstetrics (FIGO, with 15, 6, 9, and 1 stage I-IV cases identified, respectively. Mitotic count values were also evaluated from 10 high-power fields (HPFs, and 3 cases had an average mitotic count P = 0.007 and treatment (P = 0.008 were predictive of poor prognosis. Furthermore, patients with stage I tumors that received BAO+CT were associated with a better prognosis. Conclusions Mitotic activity, and cells positive for Ki-67 were identified as important factors in the diagnosis of ovarian fibrosarcoma. Furthermore, FIGO stage and treatment modalities have the potential to be prognostic factors of survival, with BAO followed by adjuvant chemotherapy associated with an improved treatment outcome.

  13. Characteristics and processing of seismic data collected on thick, floating ice: Results from the Ross Ice Shelf, Antarctica

    Science.gov (United States)

    Beaudoin, Bruce C.; ten Brink, Uri S.; Stern, Tim A.

    1992-01-01

    Coincident reflection and refraction data, collected in the austral summer of 1988/89 by Stanford University and the Geophysical Division of the Department of Scientific and Industrial Research, New Zealand, imaged the crust beneath the Ross Ice Shelf, Antarctica. The Ross Ice Shelf is a unique acquisition environment for seismic reflection profiling because of its thick, floating ice cover. The ice shelf velocity structure is multilayered with a high velocity‐gradient firn layer constituting the upper 50 to 100 m. This near surface firn layer influences the data character by amplifying and frequency modulating the incoming wavefield. In addition, the ice‐water column introduces pervasive, high energy seafloor, intra‐ice, and intra‐water multiples that have moveout velocities similar to the expected subseafloor primary velocities. Successful removal of these high energy multiples relies on predictive deconvolution, inverse velocity stack filtering, and frequency filtering. Removal of the multiples reveals a faulted, sedimentary wedge which is truncated at or near the seafloor. Beneath this wedge the reflection character is diffractive to a two‐way traveltime of ∼7.2 s. At this time, a prominent reflection is evident on the southeast end of the reflection profile. This reflection is interpreted as Moho indicating that the crust is ∼21-km thick beneath the profile. These results provide seismic evidence that the extensional features observed in the Ross Sea region of the Ross Embayment extend beneath the Ross Ice Shelf.

  14. Characteristics of participants in an HIV prevention intervention for youth in Rwanda: results from a longitudinal study

    Directory of Open Access Journals (Sweden)

    Hanne Celis

    2014-08-01

    Full Text Available Introduction. This paper studies determinants of participation in a peer-led school-based HIV prevention intervention in Rwanda. Methods. A baseline survey among 1071 students (mean age 17 years assessed potential determinants of participation, while a follow-up six months in the intervention measured actual participation in the intervention. Statistical models were built using multivariate linear and multinomial regression analysis predicting overall participation, par- ticipation in group discussions and individual counseling. Results. Those who recently had sex, had been tested for HIV, feel more susceptible to HIV, have a higher sexual self-concept, a more positive future perspective (only for non-sexually active, and boys, were more likely to participate in group activities. Also students from the same class as the peer educator and boarding school students were more likely to participate in group activities. Older students and those with low external health locus of control participated more in individual counseling. Discussion. Participation could be increased by investing in general well-being of young people, organizing girls-only activities, and diversifying activities. Key words: selection bias, HIV prevention, participation rate, young people, Rwanda

  15. CHARACTERISTICS OF TREATMENT OF PATIENTS WITH ACUTE AND CHRONIC LARYNGITIS DEPENDING ON RESULTS OF BACTERIOLOGICAL EXAMINATION OF LARYNX MICROFLORA

    Directory of Open Access Journals (Sweden)

    K. I. Chuikova

    2014-01-01

    Full Text Available This paper describes study of larynx microflora in patients with acute laryngtis and exacerbations of chronic laryngitis. Therapeutic algorithm based on bacteriologic examination data was developed reduce. New algorithm helps reduce sickness terms and to decrease prevalence of desease.123 patients of age from 18 to 60 were under observation: 43 patients with acute laryngitis and 80 patients with exacerbation of chronic laryngitis. 22 patients with acute laryngitis and 58 patients with exacerbation of chronic laryngitis underwent etiotropic treatment with antibiotics. The group of comparison with acute laryngitis (21 patients and chronic laryngitis (22 patients received treatment according to the conventional scheme.Bacteriologic examination of larynx mucous, clinical study and functional voice test (time of maximum vowels phonation before and after treatment were carried out.As a result of the research it was established that the most common causative agent of acute and chronic inflammatory larynx diseases is S. aureus as a mono culture or combined with other bacterial associations (S. аnhemolyticus, Str. viridans etc..After the end of antibacterial therapy we found symptoms as hoarseness, irritation, dry laryngopharynx, hyperemia and swelling of larynx mucous reduced eather in new treatment group than controlled group. Time of maximum vowels phonation (in seconds also increased significantly.Sickness terms after prescription of new treatment was shorter than in comparison groups: (10.9 ± 7.9 days for acute laryngitis and (12.6 ± 7.3 days for chronic laryngitis respectively. Health index was 20.8 and 19.5% respectively.

  16. Crustal characteristic variation in the central Yamato Basin, Japan Sea back-arc basin, deduced from seismic survey results

    Science.gov (United States)

    Sato, Takeshi; No, Tetsuo; Miura, Seiichi; Kodaira, Shuichi

    2018-02-01

    The crustal structure of the Yamato Bank, the central Yamato Basin, and the continental shelf in the southern Japan Sea back-arc basin is obtained based on a seismic survey using ocean bottom seismographs and seismic shot to elucidate the back-arc basin formation processes. The central Yamato Basin can be divided into three domains based on the crustal structure: the deep basin, the seamount, and the transition domains. In the deep basin domain, the crust without the sedimentary layer is about 12-13 km thick. Very few units have P-wave velocity of 5.4-6.0 km/s, which corresponds to the continental upper crust. In the seamount and transition domains, the crust without the sedimentary layer is about 12-16 km thick. The P-wave velocities of the upper and lower crusts differs among the deep basin, the seamount, and the transition domains. These results indicate that the central Yamato Basin displays crustal variability in different domains. The crust of the deep basin domain is oceanic in nature and suggests advanced back-arc basin development. The seamount domain might have been affected by volcanic activity after basin opening. In the transition domain, the crust comprises mixed characters of continental and oceanic crust. This crustal variation might represent the influence of different processes in the central Yamato Basin, suggesting that crustal development was influenced not only by back-arc opening processes but also by later volcanic activity. In the Yamato Bank and continental shelf, the upper crust has thickness of about 17-18 km and P-wave velocities of 3.3-4.1 to 6.6 km/s. The Yamato Bank and the continental shelf suggest a continental crustal character.

  17. Clinical, demographic characteristics and results of the long term follow-up in adolescents and adults with congenital heart disease

    Directory of Open Access Journals (Sweden)

    I.G. Lebid

    2016-05-01

    Full Text Available The aim – to analyze clinical and demographic indicators in adolescents and adults with congenital heart disease (CHD to provide strategy of cardiac care for these patients, to assess risk of cardiological and cardiac surgery interventions in patients with congenital heart malformations. Materials and methods. 2569 consecutive patients, aged 16–88 years, mean age 24.14 ± 0.20 years, were selected in electronic database from April 01, 2011 to December 31, 2015. The majority (92.57 % of the included patients (n = 2378 were younger than 40 years. Results. Among all CHD patients, a significant majority had septal defects (39 % and left heart lesions (24 %, followed by congenital lesions of thoracic arteries and veins (16 % and right heart lesions (10 %. The annual number of the examined patients with CHD progressively increased (from 210 in 2011 to 656 in 2015. The number of patients aged 18 years or older mostly increased. The number of patients older than 40 years increased from nine patients in 2011 to 75 adults in 2015. Patients after cardiac surgery and percutaneous transcatheter interventions dominated (n=1553, 60.45 %, compared to the patients without any interventions for CHD (n = 1016, 39.55 %. Only one intervention for CHD was performed in the majority of these patients (n = 1255, 80.81 %, 12.94 % needed two interventions, 3.99 % – three, 2.26 % – three or more interventions. Conclusions. Among patients with congenital heart disease, patients younger than 40 years old were prevalent (92.57 %, with no significant gender differences. Septal defects (ASD, VSD, left heart lesions (congenital aortic valve stenosis and insufficiency, congenital lesions of thoracic arteries and veins (patent ductus arteriosus and aorta coarctation were registered most often in adolescents and adults.

  18. Parasitic lasing suppression in large-aperture Ti:sapphire amplifiers by optimizing the seed–pump time delay

    International Nuclear Information System (INIS)

    Chu, Y X; Liang, X Y; Yu, L H; Xu, L; Lu, X M; Liu, Y Q; Leng, Y X; Li, R X; Xu, Z Z

    2013-01-01

    Theoretical and experimental investigations are carried out to determine the influence of the time delay between the input seed pulse and pump pulses on transverse parasitic lasing in a Ti:sapphire amplifier with a diameter of 80 mm, which is clad by a refractive index-matched liquid doped with an absorber. When the time delay is optimized, a maximum output energy of 50.8 J is achieved at a pump energy of 105 J, which corresponds to a conversion efficiency of 47.5%. Based on the existing compressor, the laser system achieves a peak power of 1.26 PW with a 29.0 fs pulse duration. (letter)

  19. Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

    International Nuclear Information System (INIS)

    Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

    2004-01-01

    The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

  20. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    International Nuclear Information System (INIS)

    Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

    2014-01-01

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  1. The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

    2012-01-01

    The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

  2. Ab-initio study on the absorption spectrum of color change sapphire based on first-principles calculations with considering lattice relaxation-effect

    Science.gov (United States)

    Novita, Mega; Nagoshi, Hikari; Sudo, Akiho; Ogasawara, Kazuyoshi

    2018-01-01

    In this study, we performed an investigation on α-Al2O3: V3+ material, or the so-called color change sapphire, based on first-principles calculations without referring to any experimental parameter. The molecular orbital (MO) structure was estimated by the one-electron MO calculations using the discrete variational-Xα (DV-Xα) method. Next, the absorption spectra were estimated by the many-electron calculations using the discrete variational multi-electron (DVME) method. The effect of lattice relaxation on the crystal structures was estimated based on the first-principles band structure calculations. We performed geometry optimizations on the pure α-Al2O3 and with the impurity V3+ ion using Cambridge Serial Total Energy Package (CASTEP) code. The effect of energy corrections such as configuration dependence correction and correlation correction was also investigated in detail. The results revealed that the structural change on the α-Al2O3: V3+ resulted from the geometry optimization improved the calculated absorption spectra. By a combination of both the lattice relaxation-effect and the energy correction-effect improve the agreement to the experiment fact.

  3. A Novel Method for Measurements of the Penetration Depth of MgB2 Superconductor Films by Using Sapphire Resonators with Short-Circuited Parallel Plates

    International Nuclear Information System (INIS)

    Jung, Ho Sang; Lee, J. H.; Cho, Y. H.; Lee, Sang Young; Seong, W. K.; Lee, N. H.; Kang, W. N.

    2009-01-01

    We introduce a measurement method that enables to measure the penetration depth(λ) of superconductor films by using a short-ended parallel plate sapphire resonator. Variations in the (λof MgB 2 films could be measured down to the lowest temperature using a sapphire resonator with a YBa 2 Cu 3 O 7-x film at the bottom. A model equation of λλ 0 [1-(T/T c ) τ ] -1/2 for MgB 2 films appeared to describe the observed variations of the resonant frequency of the sapphire resonator with temperature, with λ 0 , τ and T c used as the fitting parameters.

  4. Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

    Science.gov (United States)

    Omar, Al-Zuhairi; Shuhaimi Bin Abu Bakar, Ahmad; Makinudin, Abdullah Haaziq Ahmad; Khudus, Muhammad Imran Mustafa Abdul; Azman, Adreen; Kamarundzaman, Anas; Supangat, Azzuliani

    2018-05-01

    The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.

  5. Improvement of optical quality of semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

    Science.gov (United States)

    Monavarian, Morteza; Izyumskaya, Natalia; Müller, Marcus; Metzner, Sebastian; Veit, Peter; Can, Nuri; Das, Saikat; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis; Avrutin, Vitaliy

    2016-04-01

    Among the major obstacles for development of non-polar and semipolar GaN structures on foreign substrates are stacking faults which deteriorate the structural and optical quality of the material. In this work, an in-situ SiNx nano-network has been employed to achieve high quality heteroepitaxial semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire with reduced stacking fault density. This approach involves in-situ deposition of a porous SiNx interlayer on GaN that serves as a nano-mask for the subsequent growth, which starts in the nanometer-sized pores (window regions) and then progresses laterally as well, as in the case of conventional epitaxial lateral overgrowth (ELO). The inserted SiNx nano-mask effectively prevents the propagation of defects, such as dislocations and stacking faults, in the growth direction and thus reduces their density in the overgrown layers. The resulting semipolar (11 2 ¯ 2 ) GaN layers exhibit relatively smooth surface morphology and improved optical properties (PL intensity enhanced by a factor of 5 and carrier lifetimes by 35% to 85% compared to the reference semipolar (11 2 ¯ 2 ) GaN layer) which approach to those of the c-plane in-situ nano-ELO GaN reference and, therefore, holds promise for light emitting and detecting devices.

  6. Two-colour high-speed asynchronous optical sampling based on offset-stabilized Yb:KYW and Ti:sapphire oscillators.

    Science.gov (United States)

    Krauß, N; Schäfer, G; Flock, J; Kliebisch, O; Li, C; Barros, H G; Heinecke, D C; Dekorsy, T

    2015-07-13

    We present a high-speed asynchronous optical sampling system, based on two different Kerr-lens mode-locked lasers with a GHz repetition rate: An Yb:KYW oscillator and a Ti:sapphire oscillator are synchronized in a master-slave configuration at a repetition rate offset of a few kHz. This system enables two-colour pump-probe measurements with resulting noise floors below 10⁻⁶ at a data aquisition time of 5 seconds. The measured temporal resolution within the 1 ns time window is below 350 fs, including a timing jitter of less than 50 fs. The system is applied to investigate zone-folded coherent acoustic phonons in two different semiconductor superlattices in transmission geometry at a probe wavelength far below the bandgap of the superlattice constituents. The lifetime of the phonon modes with a zero wave vector and frequencies in the range from 100 GHz to 500 GHz are measured at room temperature and compared with previous work.

  7. Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Kundys, D., E-mail: dmytro.kundys@manchester.ac.uk; Sutherland, D.; Badcock, T. J.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S. [Photonics Theory group, Tyndall National Institute, Lee Maltings, Cork (Ireland); Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS (United Kingdom)

    2014-03-21

    We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

  8. Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate

    Science.gov (United States)

    Kim, Jongmyeong; Moon, Daeyoung; Lee, Seungmin; Lee, Donghyun; Yang, Duyoung; Jang, Jeonghwan; Park, Yongjo; Yoon, Euijoon

    2018-05-01

    Anisotropic in-plane strain and resultant linearly polarized photoluminescence (PL) of c-plane GaN layers were realized by using a stripe-shaped cavity-engineered sapphire substrate (SCES). High resolution X-ray reciprocal space mapping measurements revealed that the GaN layers on the SCES were under significant anisotropic in-plane strain of -0.0140% and -0.1351% along the directions perpendicular and parallel to the stripe pattern, respectively. The anisotropic in-plane strain in the GaN layers was attributed to the anisotropic strain relaxation due to the anisotropic arrangement of cavity-incorporated membranes. Linearly polarized PL behavior such as the observed angle-dependent shift in PL peak position and intensity comparable with the calculated value based on k.p perturbation theory. It was found that the polarized PL behavior was attributed to the modification of valence band structures induced by anisotropic in-plane strain in the GaN layers on the SCES.

  9. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

    2016-07-15

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  10. Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

    Science.gov (United States)

    Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

    2011-05-01

    The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

  11. Formation of metal nanoparticles of various sizes in plasma plumes produced by Ti:sapphire laser pulses

    International Nuclear Information System (INIS)

    Chakravarty, U.; Naik, P. A.; Mukherjee, C.; Kumbhare, S. R.; Gupta, P. D.

    2010-01-01

    In this paper, an experimental study on generation of nanoparticle various sizes using Ti:sapphire laser pulses, is reported. Nanoparticle formation in plasma plumes of metals like silver and copper, expanding in vacuum, has been studied using stretched pulses of 300 ps duration [subnanoseconds (sub-ns)] from a Ti:sapphire laser. It has been compared with the nanoparticle formation (of the same materials) when compressed pulses of 45 fs duration were used under similar focusing conditions. Nanoparticle formation is observed at intensities as high as 2x10 16 W/cm 2 . The structural analysis of the nanoparticle deposition on a silicon substrate showed that, using 45 fs pulses, smaller nanoparticles of average size ∼20 nm were generated, whereas on using the sub-ns pulses, larger particles were produced. Also, the visible light transmission and reflection from the nanoparticle film of Ag on glass substrate showed surface plasmon resonance (SPR). The SPR curves of the films of nanoparticles deposited by femtosecond pulses were always broader and reflection/transmission was always smaller when compared with the films formed using the sub-ns pulses, indicating smaller size particle formation by ultrashort pulses. Thus, it has been demonstrated that variation in the laser pulse duration of laser offers a simple tool for varying the size of the nanoparticles generated in plasma plumes.

  12. Epitaxial AlN layers on sapphire and diamond; Epitaktische AlN-Schichten auf Saphir und Diamant

    Energy Technology Data Exchange (ETDEWEB)

    Hermann, Martin

    2009-04-27

    In this work, epitaxial AlN layers deposited by molecular beam epitaxy on sapphire and diamond substrates were investigated. Starting from this AlN, the dopant silicon was added. The influence of the silicon doping on the structural properties of the host AlN crystal was investigated using high resolution X-ray diffraction. Once the silicon concentration exceeds 1 x 10{sup 19} cm{sup -3}, a significant change of the AlN:Si crystal can be observed: increasing the silicon concentration up to 5 x 10{sup 20} cm{sup -3} results in a decrease of the a lattice parameter by approximately 1.2 pm and an increase of the c lattice parameter by about 1.0 pm. The crystal is stressed additionally by adding silicon resulting in a increase of the biaxial compressive stress of up to 2.0 GPa. Further increase of the silicon concentration leads to lattice relaxation. This result from X-ray diffraction was independently confirmed by Raman spectroscopy investigations. Further increase of the silicon concentration leads to the generation of polycrystalline phases within the epitaxial layer. XTEM measurements detected these polycrystalline phases. In addition, XTEM investigations confirmed also the increase of the lateral crystal size with increasing silicon concentration, as well as a great reduction of the screw dislocation density by more than one order of magnitude as found by X-ray diffraction: in undoped, nitrogen rich grown AlN layers the screw dislocation density is about 3 x 10{sup 8} cm{sup -2}, while AlN layers with a silicon concentration of 5 x 10{sup 20} cm{sup -3} show a screw dislocation density of only 1 x 10{sup 7} cm{sup -2}. In low-doped AlN:Si ([Si]{approx}2 x 10{sup 19} cm{sup -3}) the activation energy of the electronic conductivity is about 250 meV. Increasing the silicon concentration to about 1 x 10{sup 21} cm{sup -3} leads to an increase of the activation energy up to more than 500 meV in the now much more stressed AlN:Si epilayer. Studies of the absorption

  13. Silicon on insulator technology. Characteristics. Applications; Technologies silicium sur isolant. Caracteristiques. Exemples d'application

    Energy Technology Data Exchange (ETDEWEB)

    Suat, J. P.; Peccoud, L.; Le Goascoz, V.; Garcia, M.; Mackowiak, E.

    1975-01-31

    The advantages resulting from a SOS (Silicon-on-Sapphire) MOS technology are demonstrated. Experimental results giving the performance of C.MOS and depletion-enrichment P-channel technologies are presented, with an application of Silicon on insulator on development, that is to say a 1024 bits MNOS memory, peripheral circuits being developed according to the depletion-enrichment technology.

  14. High-order dispersion control of 10-petawatt Ti:sapphire laser facility.

    Science.gov (United States)

    Li, Shuai; Wang, Cheng; Liu, Yanqi; Xu, Yi; Li, Yanyan; Liu, Xingyan; Gan, Zebiao; Yu, Lianghong; Liang, Xiaoyan; Leng, Yuxin; Li, Ruxin

    2017-07-24

    A grism pair is utilized to control the high-order dispersion of the Shanghai Superintense Ultrafast Lasers Facility, which is a large-scale project aimed at delivering 10-PW laser pulses. We briefly present the characteristics of the laser system and calculate the cumulative B-integral, which determines the nonlinear phase shift influence on material dispersion. Three parameters are selected, grism separation, angle of incidence and slant distance of grating compressor, to determine their optimal values through an iterative searching procedure. Both the numerical and experimental results confirm that the spectral phase distortion is controlled, and the recompressed pulse with a duration of 24 fs is obtained in the single-shot mode. The distributions and stabilities of the pulse duration at different positions of the recompressed beam are also investigated. This approach offers a new feasible solution for the high-order dispersion compensation of femtosecond petawatt laser systems.

  15. Manipulating the optical properties of dual implanted Au and Zn nanoparticles in sapphire

    Science.gov (United States)

    Epie, E. N.; Scott, D.; Chu, W. K.

    2017-11-01

    We have synthesized and manipulated the optical properties of metallic nanoparticles (NPs) by using a combination of low-energy high-fluence dual implantation and thermal annealing. We demonstrated that by implanting Zn before Au, the resulting absorption peak is enormously blue-shifted by 120 nm with respect to that of Au-only implanted samples. This magnitude of optical shift is not characteristic of unalloyed Au and to the best of our knowledge cannot be attributed to NP size change alone. On the other hand, the absorption peak for samples implanted with Au followed by Zn is blue-shifted about 20 nm. Additionally, by carefully annealing all implanted samples, both NP size distribution and corresponding optical properties can be further modified in a controlled manner. We attribute these behaviours to nanoalloy formation. This work provides a direct method for synthesizing and manipulating both the plasmonic and structural properties of metallic alloy NP in various transparent dielectrics for diverse applications.

  16. A web-based survey of the relationship between buddhist religious practices, health, and psychological characteristics: research methods and preliminary results.

    Science.gov (United States)

    Wiist, W H; Sullivan, B M; Wayment, H A; Warren, M

    2010-03-01

    A Web-based survey was conducted to study the religious and health practices, medical history and psychological characteristics among Buddhist practitioners. This report describes the development, advertisement, administration and preliminary results of the survey. Over 1200 Buddhist practitioners responded. Electronic advertisements were the most effective means of recruiting participants. Survey participants were mostly well educated with high incomes and white. Participants engaged in Buddhist practices such as meditation, attending meetings and obtaining instruction from a monk or nun, and practiced healthful behaviors such as regular physical activity and not smoking. Buddhist meditative practice was related to psychological mindfulness and general health.

  17. Noise measurements on NbN thin films with a negative temperature resistance coefficient deposited on sapphire and on SiO2

    NARCIS (Netherlands)

    Leroy, G.; Gest, J.; Vandamme, L.K.J.; Bourgeois, O.

    2007-01-01

    We characterize granular NbNx thin cermet films deposited on either sapphire substrate or on SiO2 and compare the 1/f noise at 300 K and 80 K. The films were characterized with an impedance analyzer from 20 Hz to 1 MHz and analyzed as a resistor R in parallel with a capacitor C. The calculated noise

  18. Relations between Anthropometric Characteristics and Motor Abilities of 14 – 15U Female Swimmers on 50m Result for each Technique

    Directory of Open Access Journals (Sweden)

    Goran Dimitrić

    2016-10-01

    Full Text Available In aim of correlation between antropometric characteristics, motor abilities and results of swimming 50m in all swimming techniques, a group of 22 swimmers (girls of Serbian national team, aged 14-15, underwent some anthropometric measurements as well as some motor abilities. Observed longitudinal dimensions were: body height, body mass, arm span and torax circumference and observed motor abilities were: body strength (arms, legs, stomach and flexibility (trunk and arms. Regression analisys showed that arm span corellated with 50m butterfly and free style score as well as strenght of body and legs corellated with 50m backstroke and free style score. Other measures didn΄t corelatted significantly on this sample. Study results confirms importance of arm span and some segments of body strenhgt of swimmers (girls for successful swimm on 50m in butterfly, backstroke and freestyle techniques in the age 14-15 years.

  19. Capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN MIS structures

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Nikolaev, A. E.; Lundin, V. V.; Sakharov, A. V.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Afanas’ev, A. V.; Romanov, A. A.; Osachev, E. V. [St. Petersburg Electrotechnical University LETI (Russian Federation)

    2015-08-15

    The capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 10{sup 6} V/cm, 7.5, and 3 × 10{sup 12} cm{sup −2}, respectively.

  20. Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

    Science.gov (United States)

    Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

    2018-05-01

    AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

  1. A descriptive study of psoriasis characteristics, severity and impact among 3,269 patients: Results of a Belgian cross sectional study (BELPSO)

    NARCIS (Netherlands)

    J. Lambert (Julien); E.A. Dowlatshahi (Emmilia); M. de la Brassinne (Michel); T.E.C. Nijsten (Tamar)

    2012-01-01

    textabstractBackground: Although several large observational studies have reported on psoriasis characteristics, very few have included severity assessments by dermatologists and validated health related quality of life measures. Objective: To describe psoriasis characteristics, clinical severity

  2. Quantifying Heterogeneities in Soil Cover and Weathering in the Bitterroot and Sapphire Mountains, Montana: Implications for Glacial Legacies and their Morphologic Control on Soil Formation

    Science.gov (United States)

    Benjaram, S. S.; Dixon, J. L.

    2017-12-01

    To what extent is chemical weathering governed by a landscape's topography? Quantifying chemical weathering in both steep rocky landscapes and soil-mantled landscapes requires describing heterogeneity in soil and rock cover at local and landscape scales. Two neighboring mountain ranges in the northern Rockies of western Montana, USA, provide an ideal natural laboratory in which to investigate the relationship between soil chemical weathering, persistence of soil cover, and topography. We focus our work in the previously glaciated Bitterroot Mountains, which consist of steep, rock-dominated hillslopes, and the neighboring unglaciated Sapphire Mountains, which display convex, soil-mantled hillslopes. Soil thickness measurements, soil and rock geochemistry, and digital terrain analysis reveal that soils in the rock-dominated Bitterroot Mountains are only slightly less weathered than those in the Sapphire Mountains. However, these differences are magnified when adjusted for rock fragments at a local scale and bedrock cover at a landscape scale, using our newly developed metric, the rock-adjusted chemical depletion fraction (RACDF) and rock-adjusted mass transfer coefficient (RA τ). The Bitterroots overall are 30% less weathered than the Sapphires despite higher mean annual precipitation in the former, with an average rock-adjusted CDF of 0.38 in the postglacial Bitterroots catchment and 0.61 in the nonglacial Sapphire catchment, suggesting that 38% of rock mass is lost in the conversion to soil in the Bitterroots, whereas 61% of rock mass is lost in the nonglaciated Sapphires. Because the previously glaciated Bitterroots are less weathered despite being wetter, we conclude that the glacial history of this landscape exerts more influence on soil chemical weathering than does modern climate. However, while previous studies have correlated weathering intensity with topographic parameters such as slope gradient, we find little topographic indication of specific controls

  3. Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

    2012-06-30

    The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

  4. Testing local Lorentz and position invariance and variation of fundamental constants by searching the derivative of the comparison frequency between a cryogenic sapphire oscillator and hydrogen maser

    International Nuclear Information System (INIS)

    Tobar, Michael Edmund; Wolf, Peter; Bize, Sebastien; Santarelli, Giorgio; Flambaum, Victor

    2010-01-01

    The cryogenic sapphire oscillator at the Paris Observatory has been continuously compared to various hydrogen masers since 2001. The early data sets were used to test local Lorentz invariance in the Robertson-Mansouri-Sexl (RMS) framework by searching for sidereal modulations with respect to the cosmic microwave background, and represent the best Kennedy-Thorndike experiment to date. In this work, we present continuous operation over a period of greater than six years from September 2002 to December 2008 and present a more precise way to analyze the data by searching the time derivative of the comparison frequency. Because of the long-term operation we are able to search both sidereal and annual modulations. The results give P KT =β RMS -α RMS -1=-1.7(4.0)x10 -8 for the sidereal and -23(10)x10 -8 for the annual term, with a weighted mean of -4.8(3.7)x10 -8 , a factor of 8 better than previous. Also, we analyze the data with respect to a change in gravitational potential for both diurnal and annual variations. The result gives β H-Maser -β CSO =-2.7(1.4)x10 -4 for the annual and -6.9(4.0)x10 -4 for the diurnal terms, with a weighted mean of -3.2(1.3)x10 -4 . This result is 2 orders of magnitude better than other tests that use electromagnetic resonators. With respect to fundamental constants a limit can be provided on the variation with ambient gravitational potential and boost of a combination of the fine structure constant (α), the normalized quark mass (m q ), and the electron to proton mass ratio (m e /m p ), setting the first limit on boost dependence of order 10 -10 .

  5. Are the results of questionnaires measuring non-cognitive characteristics during the selection procedure for medical school application biased by social desirability?

    Science.gov (United States)

    Obst, Katrin U; Brüheim, Linda; Westermann, Jürgen; Katalinic, Alexander; Kötter, Thomas

    2016-01-01

    Introduction: A stronger consideration of non-cognitive characteristics in Medical School application procedures is desirable. Psychometric tests could be used as an economic supplement to face-to-face interviews which are frequently conducted during university internal procedures for Medical School applications (AdH, Auswahlverfahren der Hochschulen). This study investigates whether the results of psychometric questionnaires measuring non-cognitive characteristics such as personality traits, empathy, and resilience towards stress are vulnerable to distortions of social desirability when used in the context of selection procedures at Medical Schools. Methods: This study took place during the AdH of Lübeck University in August 2015. The following questionnaires have been included: NEO-FFI, SPF, and AVEM. In a 2x1 between-subject experiment we compared the answers from an alleged application condition and a control condition. In the alleged application condition we told applicants that these questionnaires were part of the application procedure. In the control condition applicants were informed about the study prior to completing the questionnaires. Results: All included questionnaires showed differences which can be regarded as social-desirability effects. These differences did not affect the entire scales but, rather, single subscales. Conclusion: These results challenge the informative value of these questionnaires when used for Medical School application procedures. Future studies may investigate the extent to which the differences influence the actual selection of applicants and what implications can be drawn from them for the use of psychometric questionnaires as part of study-place allocation procedures at Medical Schools.

  6. Are the results of questionnaires measuring non-cognitive characteristics during the selection procedure for medical school application biased by social desirability?

    Directory of Open Access Journals (Sweden)

    Obst, Katrin U.

    2016-11-01

    Full Text Available Introduction: A stronger consideration of non-cognitive characteristics in Medical School application procedures is desirable. Psychometric tests could be used as an economic supplement to face-to-face interviews which are frequently conducted during university internal procedures for Medical School applications (AdH, Auswahlverfahren der Hochschulen. This study investigates whether the results of psychometric questionnaires measuring non-cognitive characteristics such as personality traits, empathy, and resilience towards stress are vulnerable to distortions of social desirability when used in the context of selection procedures at Medical Schools.Methods: This study took place during the AdH of Lübeck University in August 2015. The following questionnaires have been included: NEO-FFI, SPF, and AVEM. In a 2x1 between-subject experiment we compared the answers from an alleged application condition and a control condition. In the alleged application condition we told applicants that these questionnaires were part of the application procedure. In the control condition applicants were informed about the study prior to completing the questionnaires.Results: All included questionnaires showed differences which can be regarded as social-desirability effects. These differences did not affect the entire scales but, rather, single subscales.Conclusion: These results challenge the informative value of these questionnaires when used for Medical School application procedures. Future studies may investigate the extent to which the differences influence the actual selection of applicants and what implications can be drawn from them for the use of psychometric questionnaires as part of study-place allocation procedures at Medical Schools.

  7. Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

    Science.gov (United States)

    Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

    2018-05-01

    The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

  8. Femtosecond resolution timing jitter correction on a TW scale Ti:sapphire laser system for FEL pump-probe experiments.

    Science.gov (United States)

    Csatari Divall, Marta; Mutter, Patrick; Divall, Edwin J; Hauri, Christoph P

    2015-11-16

    Intense ultrashort pulse lasers are used for fs resolution pump-probe experiments more and more at large scale facilities, such as free electron lasers (FEL). Measurement of the arrival time of the laser pulses and stabilization to the machine or other sub-systems on the target, is crucial for high time-resolution measurements. In this work we report on a single shot, spectrally resolved, non-collinear cross-correlator with sub-fs resolution. With a feedback applied we keep the output of the TW class Ti:sapphire amplifier chain in time with the seed oscillator to ~3 fs RMS level for several hours. This is well below the typical pulse duration used at FELs and supports fs resolution pump-probe experiments. Short term jitter and long term timing drift measurements are presented. Applicability to other wavelengths and integration into the timing infrastructure of the FEL are also covered to show the full potential of the device.

  9. Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

    International Nuclear Information System (INIS)

    Lacroix, Yves; Chung, Sung-Hoon; Sakai, Shiro

    2001-01-01

    An experiment was performed to explain the appearance of cracks along mesa structures during the processing of GaN device layers grown on sapphire substrates. Micro-Raman spectroscopy was used to measure the position-dependent stress in the GaN layer. We show evidence that the stress at the interface with the substrate may be larger along the mesa structures than that of the as-grown layer, and that this increase in stress can be enough to induce cracks along mesa structures during processing. We report on the formation of cracks that propagate guided by the nonuniformity of the stress induced by the formation of mesa structures in the GaN layer, independent of crystal direction. The understanding of cracking mechanisms has implications in GaN-based device structures that require heteroepitaxial growth of layers with different lattice size and thermal expansion coefficients. [copyright] 2001 American Institute of Physics

  10. High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Kazuo Uchida

    2012-12-01

    Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

  11. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

    International Nuclear Information System (INIS)

    Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

    2008-01-01

    High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

  12. Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

    2010-01-01

    The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  14. High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

    KAUST Repository

    Qian, Ling-Xuan

    2017-09-20

    Recently, monoclinic Ga2O3 (beta-Ga2O3) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, and great compactness. In this work, c-plane sapphire substrates were annealed under different temperatures in a vacuum furnace prior to the molecular beam epitaxy (MBE) of beta-Ga2O3 thin film, which yielded a smoother surface and even a terraceand- step-like morphology on the substrate, resulting in improved crystallinity of the epitaxial film. Accordingly, both the dark and photo currents of beta-Ga2O3 metal-semiconductor-metal (MSM) PDs were increased by the enhanced carrier mobility (mu) of the more crystalline film. However, the substrate-annealing temperature must be sufficiently high to offset the rise of the dark current and thus achieve a remarkable improvement in the photodetection properties. As a result, the PD fabricated on the 1050 degrees C-annealed substrate exhibited extremely high sensitivity, for example, high responsivity (R) of 54.9 A/ W and large specific detectivity (D*) of 3.71 x 10(14) Jones. Both parameters were increased by one order of magnitude because of the combined effects of the dramatic increase in mu and the effective reduction in defect-related recombination centers. Nevertheless, the latter also prolonged the recovery time of the PD. These findings suggest another way to develop beta-Ga2O3 PD with extremely high sensitivity. (C) 2017 Optical Society of America

  15. The association between e-cigarette use characteristics and combustible cigarette consumption and dependence symptoms: Results from a national longitudinal study.

    Science.gov (United States)

    Buu, Anne; Hu, Yi-Han; Piper, Megan E; Lin, Hsien-Chang

    2018-09-01

    Existing longitudinal surveys focused on the association between ever use of e-cigarettes and combustible cigarette consumption, making it difficult to infer what characteristics of e-cigarette use could potentially change combustible cigarette use behavior, which may have long-term health consequences. Although e-cigarettes' efficacy of alleviating dependence symptoms was supported by studies conducted in laboratory settings, whether the results can be translated into symptom reduction in the real world and over time is an open question. This study conducted secondary analysis on the Waves 1-2 data of the Population Assessment of Tobacco and Health (PATH) Study to examine the association between e-cigarette use characteristics (frequency, flavoring, and voltage adjustment) and combustible cigarette use outcomes (frequency, quantity, and symptoms), using the Heckman 2-step selection procedure with the selection bias controlled. The inclusion criteria ensured that we followed an adult cohort of exclusive combustible cigarette users at Wave 1. The result shows that higher frequency of e-cigarette use was associated with lower combustible cigarette consumption and dependence symptoms, controlling for the corresponding baseline cigarette use variable and other confounders. Given the frequency of e-cigarette use, the feature of voltage adjustment was not significantly associated with any of the cigarette use outcomes. Flavoring, on the other hand, was associated with lower quantity of cigarette use. Exclusive smokers who start using e-cigarettes do indeed change the frequency and quantity with which they smoke cigarettes. E-cigarette use may also help reduce dependence symptoms. Copyright © 2018 Elsevier Ltd. All rights reserved.

  16. Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

    2011-01-01

    Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

  17. Melanocortin-1 receptor, skin cancer and phenotypic characteristics (M-SKIP project: study design and methods for pooling results of genetic epidemiological studies

    Directory of Open Access Journals (Sweden)

    Raimondi Sara

    2012-08-01

    Full Text Available Abstract Background For complex diseases like cancer, pooled-analysis of individual data represents a powerful tool to investigate the joint contribution of genetic, phenotypic and environmental factors to the development of a disease. Pooled-analysis of epidemiological studies has many advantages over meta-analysis, and preliminary results may be obtained faster and with lower costs than with prospective consortia. Design and methods Based on our experience with the study design of the Melanocortin-1 receptor (MC1R gene, SKin cancer and Phenotypic characteristics (M-SKIP project, we describe the most important steps in planning and conducting a pooled-analysis of genetic epidemiological studies. We then present the statistical analysis plan that we are going to apply, giving particular attention to methods of analysis recently proposed to account for between-study heterogeneity and to explore the joint contribution of genetic, phenotypic and environmental factors in the development of a disease. Within the M-SKIP project, data on 10,959 skin cancer cases and 14,785 controls from 31 international investigators were checked for quality and recoded for standardization. We first proposed to fit the aggregated data with random-effects logistic regression models. However, for the M-SKIP project, a two-stage analysis will be preferred to overcome the problem regarding the availability of different study covariates. The joint contribution of MC1R variants and phenotypic characteristics to skin cancer development will be studied via logic regression modeling. Discussion Methodological guidelines to correctly design and conduct pooled-analyses are needed to facilitate application of such methods, thus providing a better summary of the actual findings on specific fields.

  18. Correlation of free-response and receiver-operating-characteristic area-under-the-curve estimates: Results from independently conducted FROC/ROC studies in mammography

    International Nuclear Information System (INIS)

    Zanca, Federica; Hillis, Stephen L.; Claus, Filip; Van Ongeval, Chantal; Celis, Valerie; Provoost, Veerle; Yoon, Hong-Jun; Bosmans, Hilde

    2012-01-01

    Purpose: From independently conducted free-response receiver operating characteristic (FROC) and receiver operating characteristic (ROC) experiments, to study fixed-reader associations between three estimators: the area under the alternative FROC (AFROC) curve computed from FROC data, the area under the ROC curve computed from FROC highest rating data, and the area under the ROC curve computed from confidence-of-disease ratings. Methods: Two hundred mammograms, 100 of which were abnormal, were processed by two image-processing algorithms and interpreted by four radiologists under the FROC paradigm. From the FROC data, inferred-ROC data were derived, using the highest rating assumption. Eighteen months afterwards, the images were interpreted by the same radiologists under the conventional ROC paradigm; conventional-ROC data (in contrast to inferred-ROC data) were obtained. FROC and ROC (inferred, conventional) data were analyzed using the nonparametric area-under-the-curve (AUC), (AFROC and ROC curve, respectively). Pearson correlation was used to quantify the degree of association between the modality-specific AUC indices and standard errors were computed using the bootstrap-after-bootstrap method. The magnitude of the correlations was assessed by comparison with computed Obuchowski-Rockette fixed reader correlations. Results: Average Pearson correlations (with 95% confidence intervals in square brackets) were: Corr(FROC, inferred ROC) = 0.76[0.64, 0.84] > Corr(inferred ROC, conventional ROC) = 0.40[0.18, 0.58] > Corr (FROC, conventional ROC) = 0.32[0.16, 0.46]. Conclusions: Correlation between FROC and inferred-ROC data AUC estimates was high. Correlation between inferred- and conventional-ROC AUC was similar to the correlation between two modalities for a single reader using one estimation method, suggesting that the highest rating assumption might be questionable.

  19. Melanocortin-1 receptor, skin cancer and phenotypic characteristics (M-SKIP) project: study design and methods for pooling results of genetic epidemiological studies

    Science.gov (United States)

    2012-01-01

    Background For complex diseases like cancer, pooled-analysis of individual data represents a powerful tool to investigate the joint contribution of genetic, phenotypic and environmental factors to the development of a disease. Pooled-analysis of epidemiological studies has many advantages over meta-analysis, and preliminary results may be obtained faster and with lower costs than with prospective consortia. Design and methods Based on our experience with the study design of the Melanocortin-1 receptor (MC1R) gene, SKin cancer and Phenotypic characteristics (M-SKIP) project, we describe the most important steps in planning and conducting a pooled-analysis of genetic epidemiological studies. We then present the statistical analysis plan that we are going to apply, giving particular attention to methods of analysis recently proposed to account for between-study heterogeneity and to explore the joint contribution of genetic, phenotypic and environmental factors in the development of a disease. Within the M-SKIP project, data on 10,959 skin cancer cases and 14,785 controls from 31 international investigators were checked for quality and recoded for standardization. We first proposed to fit the aggregated data with random-effects logistic regression models. However, for the M-SKIP project, a two-stage analysis will be preferred to overcome the problem regarding the availability of different study covariates. The joint contribution of MC1R variants and phenotypic characteristics to skin cancer development will be studied via logic regression modeling. Discussion Methodological guidelines to correctly design and conduct pooled-analyses are needed to facilitate application of such methods, thus providing a better summary of the actual findings on specific fields. PMID:22862891

  20. Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Kotani, Junji, E-mail: kotani.junji-01@jp.fujitsu.com; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu [Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

    2016-04-11

    This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 10{sup 4 }cm{sup −2} and 1.2 × 10{sup 9 }cm{sup −2} by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel–Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.

  1. False positive or negative results of shear-wave elastography in differentiating benign from malignant breast masses: analysis of clinical and ultrasonographic characteristics.

    Science.gov (United States)

    Kim, Mi Young; Choi, Nami; Yang, Jung-Hyun; Yoo, Young Bum; Park, Kyoung Sik

    2015-10-01

    Shear-wave elastography (SWE) has the potential to improve diagnostic performance of conventional ultrasound (US) in differentiating benign from malignant breast masses. To investigate false positive or negative results of SWE in differentiating benign from malignant breast masses and to analyze clinical and imaging characteristics of the masses with false SWE findings. From May to October 2013, 166 breast lesions of 164 consecutive women (mean age, 45.3 ± 10.1 years) who had been scheduled for biopsy were included. Conventional US and SWE were performed in all women before biopsy. Clinical, ultrasonographic morphologic features and SWE parameters (pattern classification and standard deviation [SD]) were recorded and compared with the histopathology results. Patient and lesion factors in the "true" and "false" groups were compared. Of the 166 masses, 118 (71.1%) were benign and 48 (28.9%) were malignant. False SWE features were more frequently observed in benign masses. False positive rates of benign masses and false negative rates of malignancy were 53% and 8.2%, respectively, using SWE pattern analysis and were 22.4% and 10.3%, respectively, using SD values. A lesion boundary of the masses on US (P = 0.039) and younger patient age (P = 0.047) were significantly associated with false SWE findings. These clinical and ultrasonographic features need to be carefully evaluated in performance and interpretation of SWE examinations. © The Foundation Acta Radiologica 2014.

  2. Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tingting; Lei, Hong, E-mail: hong_lei2005@aliyun.com

    2017-08-15

    Highlights: • The novel Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives were synthesized by seed-introduced method. • The Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives exhibited lower Ra and higher MRR on sapphire during CMP. • The cores SiO{sub 2} were coated by the shells (SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) via chemical bonds and hydrogen bonds. • XPS analysis revealed the solid-state chemical reaction between Nd{sup 3+}-doped colloidal SiO{sub 2} abrasives and sapphire during CMP. - Abstract: Abrasive is one of the most important factors in chemical mechanical polishing (CMP). In order to improve the polishing qualities of sapphire substrates, the novel Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives were prepared by seed-induced growth method. In this work, there were a series of condensation reactions during the synthesis process of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives and the silica cores were coated by shells (which contains SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) via chemical bonds and hydrogen bonds in the Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives, which made the composite abrasives’ core-shell structure more sTable Scanning electron microscopy (SEM) showed that Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives were spherical and uniform in size. And the acting mechanisms of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives on sapphire in CMP were investigated. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis and X-ray photoelectron spectroscopy (XPS) analysis demonstrated that the solid-state chemical reactions between the shells (which contained SiO{sub 2}, Nd{sub 2}Si{sub 2}O{sub 7} and Nd(OH){sub 3}) of Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives and the sapphire occurred during the CMP process. Furthermore, Nd{sup 3+}-doped colloidal SiO{sub 2} composite abrasives exhibited lower surface roughness and

  3. Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

    Science.gov (United States)

    Cheng, Zongzhe; Hanke, Michael; Vogt, Patrick; Bierwagen, Oliver; Trampert, Achim

    2017-10-01

    Heteroepitaxial Ga2O3 was deposited on c-plane and a-plane oriented sapphire by plasma-assisted molecular beam epitaxy and probed by ex-situ and in-situ synchrotron-based x-ray diffraction. The investigation on c-plane sapphire determined a critical thickness of around 33 Å, at which the monoclinic β-phase forms on top of the hexagonal α-phase. A 143 Å thick single phase α-Ga2O3 was observed on a-plane sapphire, much thicker than the α-Ga2O3 on c-plane sapphire. The α-Ga2O3 relaxed very fast in the first 30 Å in both out-of-plane and in-plane directions as measured by the in-situ study.

  4. GaN growth on sapphire by MOCVD - Material for HEMT structures

    NARCIS (Netherlands)

    Grzegorczyk, A.P.

    2006-01-01

    This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed.

  5. Product consistency test and toxicity characteristic leaching procedure results of the ceramic waste form from the electrometallurgical treatment process for spent fuel

    International Nuclear Information System (INIS)

    Johnson, S. G.; Adamic, M. L.: DiSanto, T.; Warren, A. R.; Cummings, D. G.; Foulkrod, L.; Goff, K. M.

    1999-01-01

    The ceramic waste form produced from the electrometallurgical treatment of sodium bonded spent fuel from the Experimental Breeder Reactor-II was tested using two immersion tests with separate and distinct purposes. The product consistency test is used to assess the consistency of the waste forms produced and thus is an indicator of a well-controlled process. The toxicity characteristic leaching procedure is used to determine whether a substance is to be considered hazardous by the Environmental Protection Agency. The proposed high level waste repository will not be licensed to receive hazardous waste, thus any waste forms destined to be placed there cannot be of a hazardous nature as defined by the Resource Conservation and Recovery Act. Results are presented from the first four fully radioactive ceramic waste forms produced and from seven ceramic waste forms produced from cold surrogate materials. The fully radioactive waste forms are approximately 2 kg in weight and were produced with salt used to treat 100 driver subassemblies of spent fuel

  6. Prevalence and clinical characteristics of metabolically healthy obese individuals and other obese/non-obese metabolic phenotypes in a working population: results from the Icaria study

    Directory of Open Access Journals (Sweden)

    Albert Goday

    2016-04-01

    Full Text Available Abstract Background Metabolically healthy obese (MHO phenotype may present with distinct characteristics compared with those with a metabolically unhealthy obese phenotype. Epidemiologic data on the distribution of these conditions in the working population are lacking. We aimed to evaluate the prevalence and clinical characteristics of MHO and other obese/non-obese metabolic phenotypes in a working population. Methods Cross-sectional analysis of all subjects who had undergone a medical examination with Ibermutuamur Prevention Society from May 2004 to December 2007. Participants were classified into 5 categories according to their body mass index (BMI; within each of these categories, participants were further classified as metabolically healthy (MH or metabolically unhealthy (MUH according to the modified NCEP-ATPIII criteria. A logistic regression analysis was performed to evaluate some clinically relevant factors associated with a MH status. Results In the overall population, the prevalence of the MHO phenotype was 8.6 %. The proportions of MH individuals in the overweight and obese categories were: 87.1 % (overweight and 55.5 % (obese I-III [58.8, 40.0, and 38.7 % of the obese I, II, and III categories, respectively]. When the overweight and obese categories were considered, compared with individuals who were MUH, those who were MH tended to be younger and more likely to be female or participate in physical exercise; they were also less likely to smoke, or to be a heavy drinker. In the underweight and normal weight categories, compared with individuals who were MH, those who were MUH were more likely to be older, male, manual (blue collar workers, smokers and heavy drinkers. Among participants in the MUH, normal weight group, the proportion of individuals with a sedentary lifestyle was higher relative to those in the MH, normal weight group. The factors more strongly associated with the MUH phenotype were BMI and age, followed by the

  7. Association between perceived neighbourhood characteristics, physical activity and diet quality: results of the Brazilian Longitudinal Study of Adult Health (ELSA-Brasil).

    Science.gov (United States)

    Chor, Dóra; Cardoso, Letícia Oliveira; Nobre, Aline Araújo; Griep, Rosane Härter; Fonseca, Maria de Jesus Mendes; Giatti, Luana; Bensenor, Isabela; Del Carmen Bisi Molina, Maria; Aquino, Estela M L; Diez-Roux, Ana; de Pina Castiglione, Débora; Santos, Simone M

    2016-08-09

    The study explores associations between perceived neighbourhood characteristics, physical activity and diet quality, which in Latin America and Brazil have been scarcely studied and with inconsistent results. We conducted a cross-sectional analysis of 14,749 individuals who participated in the Brazilian Longitudinal Study of Adult Health (Estudo Longitudinal de Saúde do Adulto, ELSA-Brasil) baseline. The study included current and retired civil servants, aged between 35 and 74 years, from universities and research institutes in six Brazilian states. The International Physical Activity Questionnaire (IPAQ) long form was used to characterize physical activity during leisure time and commuting; additional questions assessed how often fruit and vegetables were consumed, as a proxy for diet quality. Neighbourhood characteristics were evaluated by the "Walking Environment" and "Availability of Healthy Foods" scales originally used in the Multi-Ethnic Study of Atherosclerosis (MESA). Associations were examined using multinomial logistic regression. Perceiving a more walkable neighbourhood was positively associated with engaging in leisure time physical activity and doing so for longer weekly. Compared with those who saw their neighbourhood as less walkable, those who perceived it as more walkable had 1.69 (95 % CI 1.57-1.83) and 1.39 (1.28-1.52) greater odds of engaging in leisure time physical activity for more than 150 min/week or up to 150 min/week (vs. none), respectively. Perceiving a more walkable neighbourhood was also positively associated with transport-related physical activity. The same pattern was observed for diet: compared with participants who perceived healthy foods as less available in their neighbourhood, those who saw them as more available had odds 1.48 greater (1.31-1.66) of eating fruits, and 1.47 greater (1.30-1.66) of eating vegetables, more than once per day. Perceived walkability and neighbourhood availability of healthy food were

  8. Inhibition of the JAK2/STAT3 pathway in ovarian cancer results in the loss of cancer stem cell-like characteristics and a reduced tumor burden

    International Nuclear Information System (INIS)

    Abubaker, Khalid; Luwor, Rodney B; Zhu, Hongjian; McNally, Orla; Quinn, Michael A; Burns, Christopher J; Thompson, Erik W; Findlay, Jock K; Ahmed, Nuzhat

    2014-01-01

    Current treatment of ovarian cancer patients with chemotherapy leaves behind a residual tumor which results in recurrent ovarian cancer within a short time frame. We have previously demonstrated that a single short-term treatment of ovarian cancer cells with chemotherapy in vitro resulted in a cancer stem cell (CSC)-like enriched residual population which generated significantly greater tumor burden compared to the tumor burden generated by control untreated cells. In this report we looked at the mechanisms of the enrichment of CSC-like residual cells in response to paclitaxel treatment. The mechanism of survival of paclitaxel-treated residual cells at a growth inhibitory concentration of 50% (GI50) was determined on isolated tumor cells from the ascites of recurrent ovarian cancer patients and HEY ovarian cancer cell line by in vitro assays and in a mouse xenograft model. Treatment of isolated tumor cells from the ascites of ovarian cancer patients and HEY ovarian cancer cell line with paclitaxel resulted in a CSC-like residual population which coincided with the activation of Janus activated kinase 2 (JAK2) and signal transducer and activation of transcription 3 (STAT3) pathway in paclitaxel surviving cells. Both paclitaxel-induced JAK2/STAT3 activation and CSC-like characteristics were inhibited by a low dose JAK2-specific small molecule inhibitor CYT387 (1 μM) in vitro. Subsequent, in vivo transplantation of paclitaxel and CYT387-treated HEY cells in mice resulted in a significantly reduced tumor burden compared to that seen with paclitaxel only-treated transplanted cells. In vitro analysis of tumor xenografts at protein and mRNA levels demonstrated a loss of CSC-like markers and CA125 expression in paclitaxel and CYT387-treated cell-derived xenografts, compared to paclitaxel only-treated cell-derived xenografts. These results were consistent with significantly reduced activation of JAK2 and STAT3 in paclitaxel and CYT387-treated cell-derived xenografts

  9. Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

    Energy Technology Data Exchange (ETDEWEB)

    Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

  10. Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by Using Ultra-violet Laser Lift-Of Techniques

    International Nuclear Information System (INIS)

    Wei-Hua, Chen; Xiao-Dong, Hu; Xiang-Ning, Kang; Xu-Rong, Zhou; Xiao-Min, Zhang; Tong-Jun, Yu; Zhi-Jian, Yang; Ke, Xu; Guo-Yi, Zhang; Xu-Dong, Shan; Li-Ping, You

    2009-01-01

    Ultra-violet (KrF excimer laser, λ = 248 nm) laser lift-of (LLO) techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation induced by the ultra-violet laser lift-of (UV-LLO) has been characterized by micro-Raman spectroscopy, micro-photoluminescence, along with high-resolution transmission electron microscopy (HRTEM). HRTEM indicates that UV-LLO induced phase transition takes place above the LLO interface, without phase transition under the LLO interface. The formed cubic GaN often exists as nanocrystal grains attaching on the bulk hexagonal GaN. The half-loop-cluster-like UV-LLO interface indicates that the LLO-induced shock waves has generated and played an assistant role in the decomposition of the hexagonal GaN and in the formation of cubic GaN grains at the LLO surface

  11. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  12. Delineating a Retesting Zone Using Receiver Operating Characteristic Analysis on Serial QuantiFERON Tuberculosis Test Results in US Healthcare Workers

    Directory of Open Access Journals (Sweden)

    Wendy Thanassi

    2012-01-01

    Full Text Available Objective. To find a statistically significant separation point for the QuantiFERON Gold In-Tube (QFT interferon gamma release assay that could define an optimal “retesting zone” for use in serially tested low-risk populations who have test “reversions” from initially positive to subsequently negative results. Method. Using receiver operating characteristic analysis (ROC to analyze retrospective data collected from 3 major hospitals, we searched for predictors of reversion until statistically significant separation points were revealed. A confirmatory regression analysis was performed on an additional sample. Results. In 575 initially positive US healthcare workers (HCWs, 300 (52.2% had reversions, while 275 (47.8% had two sequential positive tests. The most statistically significant (Kappa = 0.48, chi-square = 131.0, P<0.001 separation point identified by the ROC for predicting reversion was the tuberculosis antigen minus-nil (TBag-nil value at 1.11 International Units per milliliter (IU/mL. The second separation point was found at TBag-nil at 0.72 IU/mL (Kappa = 0.16, chi-square = 8.2, P<0.01. The model was validated by the regression analysis of 287 HCWs. Conclusion. Reversion likelihood increases as the TBag-nil approaches the manufacturer's cut-point of 0.35 IU/mL. The most statistically significant separation point between those who test repeatedly positive and those who revert is 1.11 IU/mL. Clinicians should retest low-risk individuals with initial QFT results < 1.11 IU/mL.

  13. Characteristics of interventional cardiologists and their work practices for the study on radiation-induced lens opacities based on the methodology developed by ELDO—preliminary results

    International Nuclear Information System (INIS)

    Domienik, Joanna; Gryglak, Szymon; Jurewicz, Joanna

    2016-01-01

    Preliminary results of the Polish epidemiology study on eye lens opacities among interventional cardiologists (ICs), based on the methodology proposed by ELDO (epidemiological studies of radio-induced cataracts in interventional cardiologists and radiologists: methodology implementation), are presented. The aim of the study is to test the hypothesis concerning the excess risk of cataract in the group of ICs. The first results concern the study population characteristics, including the most important confounding factors for cataract, as well as a detailed description of the work practices in interventional cardiology needed in order to reconstruct the cumulative eye lens dose. The data from 69 ICs and 23 controls collected based on the general medical questionnaire and the occupational questionnaire (for ICs only) were analyzed. The mean age of ICs and of the control group was 41 and 44, respectively, while the mean duration of work for exposed physicians was 9 years. The analysis of the data from the occupational questionnaire concerning the procedures performed, the use of various access routes, as well as radiation protection tools (eye lens glasses, ceiling suspended transparent shield, etc.) are also presented. On the basis of this information and additional assumptions about the doses per procedure (as well as reduction factors for various types of radiation measures), the cumulative doses to the eye lens of ICs were evaluated. They ranged up to 1.55 Sv and 0.4 Sv for left and right eye, respectively; however, the dose to only 3% of ICs exceeded the new threshold for development of eye lens opacities (0.5 Gy) proposed by the ICRP

  14. Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Nam, Giwoong; Kim, Soaram [Department of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Kim, Do Yeob [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Lee, Dong-Yul [LED R and D team, Samsung Electronics Co. Ltd., Yongin 446-711 (Korea, Republic of); Kim, Jin Soo [Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju, Chonbuk 561-756 (Korea, Republic of); Kim, Sung-O [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Kim, Jong Su [Department of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749 (Korea, Republic of); Son, Jeong-Sik [Department of Visual Optics, Kyungwoon University, Gumi, Gyeongsangbuk-do 730-850 (Korea, Republic of); Leem, Jae-Young, E-mail: jyleem@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of)

    2012-10-15

    Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol-gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were {alpha}=4 Multiplication-Sign 10{sup -3} eV/K and {beta}=4.9 Multiplication-Sign 10{sup 3} K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission. - Highlights: Black-Right-Pointing-Pointer ZnO thin films on R-plane sapphire substrates were grown by sol-gel method. Black-Right-Pointing-Pointer Two emission peaks at 3.338 and 3.279 eV were observed at 300 K Black-Right-Pointing-Pointer Activation energies of the two peaks were 39.3 and 28.9 meV,respectively. Black-Right-Pointing-Pointer Exciton radiative lifetime of the two peaks increased with increasing temperature.

  15. Hybrid Ti:Sapphire / KrF laser facility GARPUN for combined subpicosecond/nanosecond laser-matter interaction studies

    International Nuclear Information System (INIS)

    Zvorykin, V.D.; Ionin, A.A.; Konyashcenko, A.V.; Levchenko, A.O.; Krokhin, O.N.; Mesyats, G.A.; Molchanov, A.G.; Rorulev, M.A.

    2006-01-01

    Complete test of publication follows. Hybrid laser facility consisting of Ti:Sapphire front end, 3ω converter, and e-beam-pumped large-aperture KrF amplifiers is under construction to generate combined sub-picosecond/nanosecond pulses in UV spectral range at 248-nm wavelength. This is a part of the Petawatt excimer laser project started at P.N. Lebedev Physical Institute. In comparison with commonly used solid-state chirped-pulse amplifiers (CPA), KrF amplifiers have following advantages: (i) low-density gaseous matter with three orders of magnitude lower non-linear refraction index has a small value of B-integral and negligible pulse distortion; (ii) short radiation lifetime τ r = 6 ns of the upper laser level of KrF(B-X) transition (with accounting for collisions τ c ∼ 2 ns), that means the population inversion is recovered each 2 ns during the pumping time, which is typically τ p ≥ 100 ns for technical reasons. Thus, it might be possible eliminating of very costly large-aperture compressor gratings and to amplify both short τ sh c and long τ long ≥ τ c pulses in the same amplifiers, as a short pulse does not affect the gain during the most of pumping. This gives a unique opportunity for realization of fast-ignition scheme in Inertial Confinement Fusion using large-scale KrF drivers. The Ti:Sapphire front end 'Start 248M' currently operates with the following parameters: rep rate 10 Hz, pulse energy and duration at fundamental wavelength (744 nm) > 8 mJ and 0.5 mJ and 0.4 mJ, 740 nm) and multi-pass amplifier (10 Hz, > 15 mJ, 740 nm), both pumped by 2ω pulsed Lotis LS-2134 Nd:YAG laser (10 Hz, 10 ns, 532 nm) with distributed energies of 5 and 70 mJ, two-gratings compressor, and 3ω converter with two BBO crystals and total efficiency 8%. EMG 150MSC Lambda Physik KrF laser is used afterwards to generate ns pulses and to amplify fs pulses in its two separate discharge chambers. Two e-beam pumped KrF amplifiers Berdysh and GARPUN with active volumes 10

  16. Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

    Directory of Open Access Journals (Sweden)

    Keisuke Iwano

    2016-10-01

    Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

  17. X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

    2005-02-01

    CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

    International Nuclear Information System (INIS)

    Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

    2005-01-01

    CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

    2016-04-15

    In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  20. Automated quantification of apoptosis in B-cell chronic lymphoproliferative disorders: a prognostic variable obtained with the Cell-Dyn Sapphire (Abbott) automated hematology analyzer.

    Science.gov (United States)

    Fumi, M; Martins, D; Pancione, Y; Sale, S; Rocco, V

    2014-12-01

    B-chronic lymphocytic leukemia CLL, a neoplastic clonal disorder with monomorphous small B lymphocytes with scanty cytoplasm and clumped chromatin, can be morphologically differentiated in typical and atypical forms with different prognosis: Smudge cells (Gumprecht's shadows) are one of the well-known features of the typical CLL and are much less inconsistent in other different types CLPD. Abbott Cell-Dyn Sapphire uses the fluorescence after staining with the DNA fluorochrome propidium iodide for the measurement of nucleated red blood cells (NRBCs) and nonviable cells (FL3+ cell fraction): We have studied the possible correlation between presence and number of morphologically identifiable smudge cells on smears and the percentage of nonviable cells produced by Cell-Dyn Sapphire. 305 blood samples from 224 patients with B-cell lymphoproliferative disorders and 40 healthy blood donors were analyzed by CBC performed by Cell-Dyn Sapphire, peripheral blood smear, and immunophenotype characterization. FL3+ fraction in CLPD directly correlated with the percentage of smudge cells and is significantly increased in patients with typical B-CLL. This phenomenon is much less evident in patients with atypical/mixed B-CLL and B-NHL. In small laboratories without FCM and cytogenetic, smudge cells%, can be utilized as a preliminary diagnostic and prognostic tool in differential diagnosis of CLPD. © 2014 John Wiley & Sons Ltd.

  1. Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

    Science.gov (United States)

    Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

    2013-05-01

    A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

  2. Clinical characteristics of patients assessed within an Improving Access to Psychological Therapies (IAPT) service: results from a naturalistic cohort study (Predicting Outcome Following Psychological Therapy; PROMPT).

    Science.gov (United States)

    Hepgul, Nilay; King, Sinead; Amarasinghe, Myanthi; Breen, Gerome; Grant, Nina; Grey, Nick; Hotopf, Matthew; Moran, Paul; Pariante, Carmine M; Tylee, André; Wingrove, Janet; Young, Allan H; Cleare, Anthony J

    2016-02-27

    A substantial number of patients do not benefit from first line psychological therapies for the treatment of depression and anxiety. Currently, there are no clear predictors of treatment outcomes for these patients. The PROMPT project aims to establish an infrastructure platform for the identification of factors that predict outcomes following psychological treatment for depression and anxiety. Here we report on the first year of recruitment and describe the characteristics of our sample to date. One hundred and forty-seven patients awaiting treatment within an Improving Access to Psychological Therapies (IAPT) service were recruited between February 2014 and February 2015 (representing 48 % of those eligible). Baseline assessments were conducted to collect information on a variety of clinical, psychological and social variables including a diagnostic interview using the Mini International Neuropsychiatric Interview (MINI). Our initial findings showed that over a third of our sample were not presenting to IAPT services for the first time, and 63 % had been allocated to receive higher intensity IAPT treatments. Approximately half (46 %) were taking prescribed psychotropic medication (most frequently antidepressants). Co-morbidity was common: 72 % of the sample met criteria for 2 or more current MINI diagnoses. Our initial data also indicated that 16 % met criteria for borderline personality disorder and 69 % were at high risk of personality disorder. Sixty-one percent scored above the screening threshold for bipolarity. Over half of participants (55 %) reported experiencing at least one stressful life event in the previous 12 months, whilst 67 % reported experiencing at least one form of childhood trauma. Our results to date highlight the complex nature of patients seen within an urban IAPT service, with high rates of psychiatric comorbidity, personality disorder, bipolarity and childhood trauma. Whilst there are significant challenges associated with researching

  3. Clinical characteristics and treatment outcomes of patients with major depressive disorder and comorbid anxiety disorders - results from a European multicenter study.

    Science.gov (United States)

    Dold, Markus; Bartova, Lucie; Souery, Daniel; Mendlewicz, Julien; Serretti, Alessandro; Porcelli, Stefano; Zohar, Joseph; Montgomery, Stuart; Kasper, Siegfried

    2017-08-01

    This naturalistic European multicenter study aimed to elucidate the association between major depressive disorder (MDD) and comorbid anxiety disorders. Demographic and clinical information of 1346 MDD patients were compared between those with and without concurrent anxiety disorders. The association between explanatory variables and the presence of comorbid anxiety disorders was examined using binary logistic regression analyses. 286 (21.2%) of the participants exhibited comorbid anxiety disorders, 10.8% generalized anxiety disorder (GAD), 8.3% panic disorder, 8.1% agoraphobia, and 3.3% social phobia. MDD patients with comorbid anxiety disorders were characterized by younger age (social phobia), outpatient status (agoraphobia), suicide risk (any anxiety disorder, panic disorder, agoraphobia, social phobia), higher depressive symptom severity (GAD), polypsychopharmacy (panic disorder, agoraphobia), and a higher proportion receiving augmentation treatment with benzodiazepines (any anxiety disorder, GAD, panic disorder, agoraphobia, social phobia) and pregabalin (any anxiety disorder, GAD, panic disorder). The results in terms of treatment response were conflicting (better response for panic disorder and poorer for GAD). The logistic regression analyses revealed younger age (any anxiety disorder, social phobia), outpatient status (agoraphobia), suicide risk (agoraphobia), severe depressive symptoms (any anxiety disorder, GAD, social phobia), poorer treatment response (GAD), and increased administration of benzodiazepines (any anxiety disorder, agoraphobia, social phobia) and pregabalin (any anxiety disorder, GAD, panic disorder) to be associated with comorbid anxiety disorders. Our findings suggest that the various anxiety disorders subtypes display divergent clinical characteristics and are associated with different variables. Especially comorbid GAD appears to be characterized by high symptom severity and poor treatment response. Copyright © 2017 Elsevier Ltd. All

  4. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    Science.gov (United States)

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

  5. Time-resolved photoemission micro-spectrometer using higher-order harmonics of Ti:sapphire laser

    International Nuclear Information System (INIS)

    Azuma, J.; Kamada, M.; Kondo, Y.

    2004-01-01

    Full text: A new photoemission spectrometer is under construction for the photoemission microscopy and the time-resolved pump- probe experiment. The higher order harmonics of the Ti:sapphire laser is used as the light source of the VUV region in this system. Because the fundamental laser is focused tightly into the rare gas jet to generate the higher order harmonics, the spot size of the laser, in other words, the spot size of the VUV light source is smaller than a few tens of micrometer. This smallness of the spot size has advantage for the microscopy. In order to compensate the low flux of the laser harmonics, a multilayer-coated schwaltzshild optics was designed. The multilayers play also as the monochromatic filter. The spatial resolution of this schwaltzshild system is found to be less than 1 micrometer by the ray-tracing calculations. A main chamber of the system is equipped with a time-of-flight energy analyzer to improve the efficiency of the electron detection. The main chamber and the gas chamber are separated by a differential pumping chamber and a thin Al foil. The system is designed for the study of the clean surface. It will be capable to perform the sub-micron photoemission microscopy and the femto-second pump-probe photoemission study for the various photo-excited dynamics on clean surfaces

  6. Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

    2009-07-01

    Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

  7. Eu{sup 3+} activated GaN thin films grown on sapphire by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Perea-Lopez, Nestor; Tao, Jonathan H. [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); McKittrick, Joanna [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); Department of Mechanical and Aerospace Engineering, University of California at San Diego, La Jolla, CA 92093 (United States); Talbot, Jan B. [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); Department of Nanoengineering, University of California at San Diego, La Jolla, CA 92093 (United States); Raukas, M.; Laski, J.; Mishra, K.C. [OSRAM SYLVANIA Central Research, Beverly, MA 01915-1068 (United States); Hirata, Gustavo [CCMC-UNAM, Km. 107 Carretera Tijuana-Ensenada, C. P. 22800 Ensenada Baja California (Mexico)

    2008-07-01

    By means of pulsed laser deposition, polycrystalline thin films of GaN doped with Eu{sup 3+} were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga{sub 2}O{sub 3} and Eu{sub 2}O{sub 3} were dissolved in nitric acid, which produces Ga{sub (1-x)}Eu{sub x} (NO{sub 3}){sub 3}. Next, the nitrates were oxidized in a tubular furnace with O{sub 2} flow forming Ga{sub 2(1-x)}Eu{sub 2x}O{sub 3}. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga{sub (1-x)}Eu{sub x}N. Film growth was done in a stainless steel vacuum chamber partially filled with N{sub 2} (400 mTorr). For the deposit, the 3{sup rd} harmonic of a Nd:YAG laser ({lambda}=355 nm) was focused on the surface of the target. After deposition, annealing in NH{sub 3} was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

    Directory of Open Access Journals (Sweden)

    Marsetio Noorprajuda

    2018-04-01

    Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

  9. Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire

    International Nuclear Information System (INIS)

    Jian, Sh.R.; Juang, J.Y.

    2012-01-01

    The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nano indentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the 'pop-ins' phenomena during nano indentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nano indentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young's modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

  10. Development of Auto-Seeding System Using Image Processing Technology in the Sapphire Crystal Growth Process via the Kyropoulos Method

    Directory of Open Access Journals (Sweden)

    Churl Min Kim

    2017-04-01

    Full Text Available The Kyropoulos (Ky and Czochralski (Cz methods of crystal growth are used for large-diameter single crystals. The seeding process in these methods must induce initial crystallization by initiating contact between the seed crystals and the surface of the melted material. In the Ky and Cz methods, the seeding process lays the foundation for ingot growth during the entire growth process. When any defect occurs in this process, it is likely to spread to the entire ingot. In this paper, a vision system was constructed for auto seeding and for observing the surface of the melt in the Ky method. An algorithm was developed to detect the time when the internal convection of the melt is stabilized by observing the shape of the spoke pattern on the melt material surface. Then, the vision system and algorithm were applied to the growth furnace, and the possibility of process automation was examined for sapphire growth. To confirm that the convection of the melt was stabilized, the position of the island (i.e., the center of a spoke pattern was detected using the vision system and image processing. When the observed coordinates for the center of the island were compared with the coordinates detected from the image processing algorithm, there was an average error of 1.87 mm (based on an image with 1024 × 768 pixels.

  11. Health, job characteristics, skills, and social and financial factors in relation to early retirement - Results from a longitudinal study in the Netherlands

    NARCIS (Netherlands)

    de Wind, Astrid; Geuskens, Goedele A.; Ybema, Jan Fekke; Blatter, Birgitte M.; Burdorf, Alex; Bongers, Paulien M.; van der Beek, Allard J.

    2014-01-01

    Objective This study aimed to investigate the relative contribution of health, job characteristics, skills and knowledge, and social and financial factors to the transition from work to (non-disability) early retirement. Methods Employees aged 59-63 years (N=2317) were selected from the Study on

  12. Health, job characteristics, skills, and social and financial factors in relation to early retirement - results from a longitudinal study in the Netherlands

    NARCIS (Netherlands)

    de Wind, A.; Geuskens, G.A.; Ybema, J.F.; Blatter, B.M.; Burdorf, A.; Bongers, P.M.; van der Beek, A.J.

    2014-01-01

    Objective This study aimed to investigate the relative contribution of health, job characteristics, skills and knowledge, and social and financial factors to the transition from work to (non-disability) early retirement. Methods Employees aged 59-63 years (N=2317) were selected from the Study on

  13. Health, job characteristics, skills, and social and financial factors in relation to early retirement: results from a longitudinal study in the Netherlands

    NARCIS (Netherlands)

    Wind, A. de; Geuskens, G.A.; Ybema, J.F.; Blatter, B.M.; Burdorf, A.; Bongers, P.M.; Beek, A.J. van der

    2014-01-01

    Objectives This study aimed to investigate the relative contribution of health, job characteristics, skills and knowledge, and social and financial factors to the transition from work to (non-disability) early retirement. Methods Employees aged 59–63 years (N=2317) were selected from the Study on

  14. Colorectal cancer in the elderly: characteristics and short term results Cáncer colorrectal en el anciano: Características y resultados a corto plazo

    Directory of Open Access Journals (Sweden)

    Juan José Arenal Vera

    2011-08-01

    Full Text Available Objective: to analyse the characteristics of colorectal cancer in elderly patients and to assess the outcomes of treatment. Material and methods: the study included 1,924 patients diagnosed with colorectal cancer during a 22 year period (1985-2007. We analysed patient clinical and demographic characteristics as well as their treatment and its outcome. Results: there was an increase in emergency surgery with age, increasing from 13% among patients under 80 years of age to 47% in those over 90 years of age (p = 0.0001. On the other hand, the overall percentage of patients who underwent surgical treatment decreased from 96% in patients younger than 80 years of age, to 85% and 59% in octogenarians and nonagenarians, respectively (p = 0.0001, and there was a similar pattern in the rates of curative surgery among patients who underwent surgery. The overall mortality of patients who underwent surgery was 8% (141 out of 1,769, increasing from 4% in patients younger than 70 years of age to 25% in those over 90 (p = 0.0001. Multivariate analysis showed that the factors associated with mortality were the emergency nature of the surgery (p = 0.001, the ASA grade (p = 0.0001, and the presence of systemic complications (p = 0.0001, the weight of age decreasing significantly with respect to the univariate analysis (p = 0.013. Conclusions: there is an increase in the rate of complicated forms of colorectal cancer with increasing age of patients. In addition, there is a dramatic decrease in the rate of curative tumour resection with increasing age. Intraoperative mortality for colorectal cancer in octogenarians and nonagenarians is more closely related to the nature and intent of the surgery (elective or emergency; palliative or curative, the perioperative risk (ASA grade, and severe systemic complications, than to age.Objetivo: analizar las características del cáncer colorrectal en pacientes ancianos y evaluar los resultados de su tratamiento. Material y m

  15. Socio-demographic characteristics of participation in the opportunistic German cervical cancer screening programme: results from the EPIC-Heidelberg cohort.

    Science.gov (United States)

    Seidel, David; Becker, Nikolaus; Rohrmann, Sabine; Nimptsch, Katharina; Linseisen, Jakob

    2009-04-01

    To analyse participation in the German cervical cancer screening programme by socio-demographic characteristics. In the EPIC-Heidelberg cohort study 13,612 women aged 35-65 years were recruited between 1994 and 1998. Follow-up questionnaires were used to analyse participation in cervical cancer screening. Subjects were categorised according to age (birth cohort), education, vocational training, employment status, marital status and household size. Associations between socio-demographic characteristics and participation in cervical cancer screening were analysed using multinomial logistic regression. Females of the oldest and middle birth cohort were less likely to be screened compared to the youngest birth cohort. Less-educated women and those with a low-level secondary school degree had a decreased likelihood of undergoing screening in comparison to better educated women. Married women and women living in households with four or more persons were more likely to participate in the screening programme than single women or women living alone. Employment status did not modify participation in cervical cancer screening. Knowledge on the characteristics of women with a lower attendance to cervical cancer screening could be used to improve the effectiveness of the current (opportunistic) programme by dedicated health promotion programmes. However, an organized screening programme with written invitation of all eligible women would be the preferred option.

  16. Structural properties of Pt/TiO{sub 2}/Pt heterostructure grown on sapphire substrate—Influence of annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Roch, Tomas, E-mail: roch@fmph.uniba.sk; Durina, Pavol; Grancic, Branislav; Gregor, Maros; Plecenik, Tomas; Truchly, Martin; Mikula, Marian; Satrapinskyy, Leonid; Kus, Peter; Plecenik, Andrej

    2014-09-01

    Highlights: • Pt/TiO{sub 2}/Pt, Pt/TiO{sub 2} and TiO{sub 2}/Pt stacks were grown on (c-cut) Al{sub 2}O{sub 3} and annealed at 600 °C. • Pt/TiO{sub 2}/Pt contains both TiO{sub 2}-anatase (27%) and rutile (73%) phases after annealing. • Pt/TiO{sub 2} contains both anatase and rutile, TiO{sub 2}/Pt anatase phase only. • Epitaxial relationship of bottom platinum: Pt(1 1 1)[1–10]||sub(0 0 0 1)[11{sup ¯}00]. • Platinum top layer is uniaxially oriented: Pt(1 1 1)||sub(0 0 0 1). - Abstract: Simple gas sensors based on resistivity change of TiO{sub 2} thin films using combined top and bottom metallic contacts are very promising. In this work influence of ex situ annealing in ambient air on structure of TiO{sub 2} thin film stacked between two platinum contact layers has been studied. The layers were deposited using DC magnetron sputtering on unheated c-cut sapphire substrates. For lowering of the Schottky barrier at the Pt–TiO{sub 2} interfaces and for improved crystalline stability, ex situ annealing at 600 °C in air was carried out. In order to study separately influence of top and bottom platinum layers on crystal structure, also reference samples Pt/TiO{sub 2}/Al{sub 2}O{sub 3} and TiO{sub 2}/Pt/Al{sub 2}O{sub 3} have been prepared. Non-ambient X-ray diffraction measurement during annealing process and X-ray pole figures after annealing has been measured. Near epitaxial relationship was observed for bottom Pt layer grown on c-cut sapphire substrate: Pt(1 1 1)[11{sup ¯}0]||Al{sub 2}O{sub 3}(0 0 0 1)[11{sup ¯}00]. Inner titania layer shows randomly oriented both TiO{sub 2}-rutile (R) and anatase (A) phases with the volumetric ratio of R/A ∼ 2.7. If prepared without top Pt contact layer, the TiO{sub 2} transforms during annealing to random single anatase phase. The TiO{sub 2} layer overgrown with only single Pt top contact layer shows randomly oriented both rutile and anatase phases with volumetric ratio R/A ∼ 2.3. The top Pt layer on TiO{sub 2

  17. Effect of Annealing Temperature on Morphological and Optical Transition of Silver Nanoparticles on c-Plane Sapphire.

    Science.gov (United States)

    Pandey, Puran; Kunwar, Sundar; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Lee, Jihoon

    2018-05-01

    As a promising candidate for the improved performance, silver nanoparticles (Ag NPs) have been successfully adapted in various applications such as photovoltaics, light emitting diodes (LEDs), sensors and catalysis by taking the advantage of their controllable plasmonic properties. In this paper, the control on the morphologies and optical properties of Ag NPs on c-plane sapphire (0001) is demonstrated by the systematic control of annealing temperature (between 200 and 950 °C) with 20 and 6 nm thick Ag films through the solid state dewetting. With the relatively thicker film of 20 nm, various configuration and size of Ag NPs are fabricated such as irregular, round dome-shaped and tiny Ag NPs depending on the annealing temperature. In a shrill contrast, the 6 nm Ag set exhibits a sharp distinction with the formation of densely packed small NPs and ultra-highly dense tiny Ag NPs due to the higher dewetting rate. While, the surface diffusion assumes the main driving force in the evolution process of Ag NP morphologies up to 550 °C, the sublimation of Ag atoms has played a significant role on top on the surface diffusion between 600 and 950 °C. The reflectance spectra of Ag NPs exhibit the quadrupolar resonance and dipolar resonance peaks, and the evolution of peaks, shift and average reflectance were discussed based on the Ag NPs size and surface coverage. In particular, the dipolar resonance peak in the reflectance spectra red shifts from ~475 to ~570 nm due to the size increment of Ag NPs (38.31 to 74.68 nm). The wide surface coverage of Ag NPs exhibits the highest average reflectance (~27%) and the lowest Raman intensity.

  18. Health, job characteristics, skills, and social and financial factors in relation to early retirement--results from a longitudinal study in the Netherlands.

    Science.gov (United States)

    de Wind, Astrid; Geuskens, Goedele A; Ybema, Jan Fekke; Blatter, Birgitte M; Burdorf, Alex; Bongers, Paulien M; van der Beek, Allard J

    2014-03-01

    This study aimed to investigate the relative contribution of health, job characteristics, skills and knowledge, and social and financial factors to the transition from work to (non-disability) early retirement. Employees aged 59-63 years (N=2317) were selected from the Study on Transitions in Employment, Ability and Motivation in the Netherlands (STREAM). Individual characteristics, health, job characteristics, skills and knowledge, and social and financial factors were measured using a questionnaire at baseline. Information on early retirement was derived from the one-year follow-up questionnaire. Logistic regression analyses were used to identify predictors of early retirement. Population Attributable Fractions (PAF) were calculated. Older age [odds ratio (OR) 1.79], poor physical health (OR 1.78), a positive attitude of the partner with respect to early retirement (OR 3.85), and the financial possibility to stop working before the age of 65 (OR 10.2) predicted the transition to early retirement, whereas employees that reported high appreciation at work (OR 0.58) and higher focus on development of skills and knowledge (OR 0.54) were less likely to retire early. PAF were 0.75 for the financial possibility to stop working, 0.43 for a positive attitude of the partner with respect to early retirement, 0.27 for low appreciation at work, 0.23 for a low focus on development, and 0.21 for poor health. The financial possibility to stop working before the age of 65 importantly contributes to early retirement. In the context of rapidly diminishing financial opportunities to retire early in the Netherlands, the prolongation of working life might be promoted by workplace health promotion and disability management, and work-related interventions focusing on appreciation and the learning environment.

  19. Compilation of anatomical, physiological and metabolic characteristics for a Reference Asian Man. Volume 2: Country reports. Results of a co-ordinated research programme 1988-1993

    International Nuclear Information System (INIS)

    1998-02-01

    The coordinated Research Programme (CRP) on Compilation of Anatomical, Physiological and Metabolic Characteristics for a Reference Asian Man has been conducted as a programme of the IAEA Regional Co-operative Agreement (RCA) for Asia and the Pacific. The CRP was conducted to provide data for radiation protection purposes that is relevant to the biokinetic and dosimetric characteristics of the ethnic populations in the Asian region The radiological protection decisions that had to be made in the RCA member States following the Chernobyl accident were a significant motivation for establishing the CRP. Funding for the RCM by the Government of Japan is gratefully acknowledged. The IAEA wishes to thank S. Kobayashi for his efforts in support of the CRP. The IAEA extends its appreciation to the Japanese National Institute of Radiological Sciences for acting as the technical secretariat to co-ordinate the work of data compilation. Specifically, the IAEA acknowledges the contributions of H. Kawamura, G. Tanaka and T. Koyanagi. Appreciation is also extended to the National Institute of Radiological Sciences, Japan, the Bhabha Atomic Research Centre, India, and the Chinese Academy of Medical Sciences for the valuable contribution they made to the CRP as hosts for the RCMS. The IAEA officers responsible for this publication were A. Moiseev and R.V. Griffith of the Division of Radiation and Waste Safety. This publication is divided into two volumes: Volume 1 contains a summary of the data and conclusions from the project and Volume 2 the reports from participating countries

  20. Transport of radioactive material in the United States: results of a survey to determine the magnitude and characteristics of domestic, unclassified shipments of radioactive materials. Final report

    International Nuclear Information System (INIS)

    Javitz, H.S.; Lyman, T.R.; Maxwell, C.; Myers, E.L.; Thompson, C.R.

    1985-04-01

    SRI International has completed a project for the Sandia National Laboratories designed to create a statistical data base identifying the volume and characteristics of shipments of unclassified radioactive materials (RAM)* in the continental United States. Agencies providing resources for this project have included: Nuclear Regulatory Commission (NRC) Department of Transportation (DOT) Department of Energy (DOE) Federal Emergency Management Agency (FEMA). Technical management of the project was the responsibility of the Transportation Technology Center (TTC) of Sandia National Laboratories. This report is intended only as a brief summary of a project having as its primary product the Radioactive Materials Transportation (RAMT) survey data base provided by SRI to TTC. The data in the RAMT data base comes from two principal sources - a survey of NRC and Agreement State licensees (referred to as the Licensee survey) and a survey of DOE contractors (referred to as the DOE survey). This report provides summary information on: project background; objectives; approach; survey response; basic tables and discussion of shipment characteristics; and technical appendices. 21 figs., 15 tabs