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Sample records for sapphire bicrystal boundaries

  1. Grain boundary structure and solute segregation in titanium-doped sapphire bicrystals

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Seth T.

    2002-05-17

    Solute segregation to ceramic grain boundaries governs material processing and microstructure evolution, and can strongly influence material properties critical to engineering performance. Understanding the evolution and implications of grain boundary chemistry is a vital component in the greater effort to engineer ceramics with controlled microstructures. This study examines solute segregation to engineered grain boundaries in titanium-doped sapphire (Al2O3) bicrystals, and explores relationships between grain boundary structure and chemistry at the nanometer scale using spectroscopic and imaging techniques in the transmission electron microscope (TEM). Results demonstrate dramatic changes in solute segregation stemming from small fluctuations in grain boundary plane and structure. Titanium and silicon solute species exhibit strong tendencies to segregate to non-basal and basal grain boundary planes, respectively. Evidence suggests that grain boundary faceting occurs in low-angle twis t boundaries to accommodate nonequilibrium solute segregation related to slow specimen cooling rates, while faceting of tilt grain boundaries often occurs to expose special planes of the coincidence site lattice (CSL). Moreover, quantitative analysis of grain boundary chemistry indicates preferential segregation of charged defects to grain boundary dislocations. These results offer direct proof that static dislocations in ionic materials can assume a net charge, and emphasize the importance of interactions between charged point, line, and planar defects in ionic materials. Efforts to understand grain boundary chemistry in terms of space charge theory, elastic misfit and nonequilibrium segregation are discussed for the Al2O3 system.

  2. Recrystallization at grain boundaries in deformed copper bicrystals

    NARCIS (Netherlands)

    Heller, H.W.F.; Verbraak, C.A.; Kolster, B.H.

    1984-01-01

    The role of specific grain boundaries in the nucleation of recrystallization textures is demonstrated by experiments on copper bicrystals. It is deduced that the major part of the recrystallized grains that have nucleated at the grain boundary can be traced back to having nucleated in {100} <001>, {

  3. STRESS DISTRIBUTION NEAR GRAIN BOUNDARY IN ANISOTROPIC BICRYSTALS AND TRICRYSTALS

    Institute of Scientific and Technical Information of China (English)

    万建松; 岳珠峰

    2004-01-01

    The rate dependent crystallographic finite element program was implemented in ABAQUS as a UMAT for the analysis of the stress distributions near grain boundary in anisotropic bicrystals and tricrystals, taking the different crystallographic orientations into consideration. The numerical results of bicrystals model with the different crystallographic orientations shows that there is a high stress gradient near the grain boundaries. The characteristics of stress structures are dependent on the crystallographic orientations of the two grains. The existing of triple junctions in the tricrystals may result in the stress concentrations, or may not, depending on the crystallographic orientations of the three grains. The conclusion shows that grain boundary with different crystallographic orientations can have different deformation, damage, and failure behaviors. So it is only on the detail study of the stress distribution can the metal fracture be understood deeply.

  4. Influence of Grain Boundary on Fatigue Behavior of Ni-base Bicrystals

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The influence of the grain boundary on the fatigue behavior was studied by two three-point-bending (TPB) specimens.One TPB specimen was named Bicrystal 1, whose pre-crack was along the grain boundary and the applied loadparalleled to pre-crack direction, while the other TPB specimen was named Bicrystal 2, whose the pre-crack wasperpendicular to the grain boundary and the applied load paralleled also to the pre-crack. It was found that the rateof the fatigue crack growth of Bicrystal 1 was about a tenfold higher than that of Bicrystal 2. The fatigue behaviorof Bicrystal 2 specimens was dependent on the distance between the crack tip and grain boundary. The crack growthrate was highest when the crack tip was at a critical distance to the grain boundary, while the rate was the lowestwhen the crack tip reached grain boundary. After the crack was over the grain boundary, the crack growth rateincreased. The crystallographic finite element method was applied to analyze the stress and strain structure aheadof the crack, in order to reveal the above characteristics of the fatigue behavior. It is the grain boundary-inducedredistribution of stresses near the crack tip that induces the difference of fatigue behavior.

  5. Systematic study of grain boundary atomistic structures and related properties in cubic zirconia bicrystals

    Energy Technology Data Exchange (ETDEWEB)

    Shibata, N.; Ikuhara, Y. [Inst. of Engineering Innovation, Univ. of Tokyo, Tokyo (Japan); Oba, F. [Dept. of Materials Science and Engineering, Graduate School of Engineering, Kyoto Univ., Kyoto (Japan); Yamamoto, T. [Dept. of Advanced Materials Science, Graduate School of Frontier Science, Univ. of Tokyo, Kashiwa, Chiba (Japan)

    2005-02-01

    Systematic grain boundary study of cubic zirconia has been conducted by using bicrystals. It is clearly demonstrated that grain boundary atomistic structures dramatically change according to the misorientations and plane orientations of the boundaries, resulting in a dramatic change of excess energies and solute segregation behaviors. Combining with theoretical calculations, it is found that grain boundaries possess unique coordination-deficient cation sites at the cores, and their densities have a clear correlation with these properties in high-angle grain boundaries. This result indicates that grain boundary properties in ceramics are possibly determined by the accumulation of coordination-deficient sites. Thus, systematic grain boundary study using bicrystal offers fundamental understandings of the relationship between atomistic structures and properties in ceramic grain boundaries. (orig.)

  6. Grain Boundary Relaxation in Bi-Crystals: Mechanical Spectroscopy and Molecular Dynamics Simulations

    Directory of Open Access Journals (Sweden)

    Maier A.-K.

    2015-04-01

    Full Text Available Different Au-Ag-Cu samples have been studied by mechanical spectroscopy. Both polycrystals and bi-crystals show a relaxation peak at 800 K, accompanied by an elastic modulus change. Since this peak is absent in single crystals it is related to the presence of grain boundaries. Molecular dynamics simulations reveal two microscopic mechanisms, when a shear stress is applied onto a Σ5 grain boundary: at 700 K, the boundary migrates perpendicularly to the boundary plane under an external stress. At 1000 K, only sliding at the boundary is observed. These two mechanisms acting in different temperature intervals are used to model the mechanic response of a polycrystal under an applied stress. The models yield expressions for the relaxation strength Δ and for the relaxation time τ as a function of the grain size. A comparison with the mechanical spectroscopy measurements of polycrystals and the bi-crystals show that the grain boundary sliding model reproduces correctly the characteristics of the grain boundary peak.

  7. Study of magnetoresistance and conductance of bicrystal grain boundary in La0.67Ba0.33MnO3 thin film

    Indian Academy of Sciences (India)

    Neeraj Khare; A K Gupta; U P Moharil; A K Raychaudhuri; S P Pai; R Pinto

    2002-05-01

    La0.67Ba0.33MnO3 (LBMO) thin film is deposited on a $36.7°C SrTiO3 bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature > 175 K. At low temperature, - characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance–voltage characteristics of the bicrystal grain boundary indicates that at low temperatures ( < 175$ K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures ( > 175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.

  8. Combined measurement of surface, grain boundary and lattice diffusion coefficients on olivine bi-crystals

    Science.gov (United States)

    Marquardt, Katharina; Dohmen, Ralf; Wagner, Johannes

    2014-05-01

    Diffusion along interface and grain boundaries provides an efficient pathway and may control chemical transport in rocks as well as their mechanical strength. Besides the significant relevance of these diffusion processes for various geologic processes, experimental data are still very limited (e.g., Dohmen & Milke, 2010). Most of these data were measured using polycrystalline materials and the formalism of LeClaire (1951) to fit integrated concentration depth profiles. To correctly apply this formalism, certain boundary conditions of the diffusion problem need to be fulfilled, e.g., surface diffusion is ignored, and furthermore the lattice diffusion coefficient has to be known from other studies or is an additional fitting parameter, which produces some ambiguity in the derived grain boundary diffusion coefficients. We developed an experimental setup where we can measure the lattice and grain boundary diffusion coefficients simultaneously but independent and demonstrate the relevance of surface diffusion for typical grain boundary diffusion experiments. We performed Mg2SiO4 bicrystal diffusion experiments, where a single grain boundary is covered by a thin-film of pure Ni2SiO4 acting as diffusant source, produced by pulsed laser deposition. The investigated grain boundary is a 60° (011)/[100]. This specific grain boundary configuration was modeled using molecular dynamics for comparison with the experimental observations in the transmission electron microscope (TEM). Both, experiment and model are in good agreement regarding the misorientation, whereas there are still some disagreements regarding the strain fields along the grain boundary that are of outmost importance for the strengths of the material. The subsequent diffusion experiments were carried out in the temperature range between 800° and 1450° C. The inter diffusion profiles were measured using the TEMs energy dispersive x-ray spectrometer standardized using the Cliff-Lorimer equation and EMPA

  9. Effect of twin boundary on nanoimprint process of bicrystal Al thin film studied by molecular dynamics simulation

    Institute of Scientific and Technical Information of China (English)

    谢月红; 徐建刚; 宋海洋; 张云光

    2015-01-01

    The effects of twin boundary (TB) on the mechanical properties of two types of bicrystal Al thin films during the nanoimprint process are investigated by using molecular dynamics simulations. The results indicate that for the TB direction parallel to the imprinting direction, the yield stress reaches the maximum for the initial dislocation nucleation when the mould directly imprints to the TB, and the yield stress first decreases with the increase of the marker interval and then increases. However, for the TB direction perpendicular to the imprinting direction, the effect of the TB location to the imprinting forces is very small, and the yield stress is greater than that with the TB direction parallel to the imprinting direction. The results also demonstrate that the direction of the slip dislocations and the deformation of the thin film caused by spring-back are different due to various positions and directions of the TB.

  10. Fabrication of ZnO Bi-crystals with twist boundaries using Co doped ZnO single crystals

    CERN Document Server

    Ohashi, N; Ohgaki, T; Tsurumi, T; Fukunaga, O; Haneda, H; Tanaka, J

    1999-01-01

    Zn O single crystals doped with Co were grown by using a flux method and their electrical properties were investigated by Hall effect. Then, these crystals were polished with diamond paste and bonded to form bi-crystal by hot pressing under a pressure of 10 MPa at 1000 .deg. C. The bi-crystals showed nonlinear I-V curves, and the curvature of I-V relation agreed with that for Co-doped polycrystalline ZnO.

  11. Shot noise in YBCO bicrystal Josephson junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.;

    2003-01-01

    We measured spectral noise density in YBCO symmetric bicrystal Josephson junctions on sapphire substrates at bias voltages up to 100 mV and T 4.2 K. Normal state resistance of the Josephson junctions, R-N = 20-90 Omega and ICRN up to 2.2 mV have been observed in the experimental samples. Noise...

  12. Bicrystal-Array Fabrication

    Science.gov (United States)

    Trahanovsky, Mary Elizabeth

    The continued optimization of technologically advanced ceramics, such as bone implants, computer components, and thermal barrier coatings, is necessary to continue the improvement of their lifetimes, effectiveness, and energy efficiencies. Properties of polycrystalline ceramics can be controlled by varying processing conditions. In order to fully understand the morphological development of grains in polycrystalline material during processing, one must understand the structure and movement of their grain boundaries, both individually and as a group. For many materials, the average group behavior has been measured, but little is known about the qualities of individual boundaries, which comprise a wide range of geometries and misorientations. A more complete understanding of the structure and motion of a collection of interfaces can only be obtained by creating and studying a range of individual interfaces with known misorientations. Many methods currently exist for creating one -- or a few -- isolated grain boundaries, also called "bicrystals," in a sample. However, this then represents only a tiny fraction of the grain boundaries present in advanced polycrystals and until now, there has been no method for creating a wide and representative collection of bicrystals within a single ceramic sample. This research project involves the development of an experimental method that results in hundreds of ceramic island-grain bicrystals on a single sample in order to facilitate combinatorial studies of a wide range of interfaces. These samples could then be used to observe correlations such as interface structure vs. misorientation, kinetic behavior vs. misorientation, and relative surface energy by measurement of dihedral angle relative to misorientation. Additionally, changes in samples that have been chemically doped or annealed under different conditions could be compared. A clear understanding of these relationships is expected to shed light on bulk polycrystalline

  13. Critical current density behaviors across a grain boundary inclined to current with different angles in YBa2Cu3O7-δ bicrystal junctions

    Science.gov (United States)

    Tao, Hua; Wei-Wei, Xu; Zheng-Ming, Ji; Da-Yuan, Guo; Qing-Yun, Wang; Xiang-Rong, Ma; Rui-Yu, Liang

    2016-06-01

    The critical current density behaviors across a bicrystal grain boundary (GB) inclined to the current direction with different angles in YBa2Cu3O7-δ bicrystal junctions in magnetic fields are investigated. There are two main reasons for the difference in critical current density in junctions at different GB inclined angles in the same magnetic field: (i) the GB plane area determines the current carrying cross section; (ii) the vortex motion dynamics at the GB affects the critical current value when the vortex starts to move along the GB by Lorentz force. Furthermore, the vortex motion in a bicrystal GB is studied by investigating transverse (Hall) and longitudinal current-voltage characteristics (I-V xx and I-V xy ). It is found that the I-V xx curve diverges from linearity at a high driving current, while the I-V xy curve keeps nearly linear, which indicates the vortices inside the GB break out of the GB by Lorentz force. Project supported by the National Natural Science Foundation of China (Grant Nos. 61501222, 61371036, and 61571219) and the School Scientific Research Fund of Nanjing Institute of Technology, China (Grant Nos. YKJ201418).

  14. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

    2016-10-25

    It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

  15. Electromagnetic characterization of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films with calcium doping for bi-crystal grain boundary conductivity enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Kleismit, Richard A; Kozlowski, Gregory [Physics Department, Wright State University, Dayton, OH 45435 (United States); Campbell, Angela L; Haugan, Timothy J; Biggers, Rand R; Maartense, Iman; Barnes, Paul L; Peterson, Timothy L [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433 (United States); Hopkins, Simon C [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)], E-mail: gregory.kozlowski@wright.edu, E-mail: gk286@cam.ac.uk

    2008-03-01

    The objective of this study was to examine the transport properties of two YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films with (Y{sub 0.9}Ca{sub 0.1}){sub 2}BaCuO{sub 5} additions deposited on vicinal SrTiO{sub 3} 6{sup 0} bi-crystal substrates and to investigate the possible correlations between spatial calcium distribution and local electromagnetic properties across bi-crystal grain boundaries using evanescent microwave microscopy (EMM) and atomic force microscopy (AFM). The samples under consideration differed in transport critical current measurements by a factor of two although they were deposited on the same type of bi-crystal substrate. A near-field evanescent microwave microscope based on a coaxial transmission line resonator with an end-wall aperture was used to measure changes in conductivity local to the bi-crystal boundary of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films below (79.2 K) and above (room temperature) the superconducting transition temperature. Atomic concentration measurements by electron microprobe analysis were performed in the same regions, and a clear correlation between calcium distribution and conductivity at 79.2 K (as represented by the change in quality factor) was found. Surface potential imaging (SPI) and quality factor scans in the area of the bi-crystal grain boundaries were performed at room temperature using AFM and EMM, respectively, to evaluate local electromagnetic properties in the normal state and investigate their correlation with superconducting properties.

  16. Observation of distinct, temperature dependent flux noise near bicrystal grain boundaries in YBa2Cu3O7-x films

    DEFF Research Database (Denmark)

    Bukh, K. R.; Jacobsen, Claus Schelde; Hansen, Jørn Bindslev

    2000-01-01

    The characteristics of the magnetic flux noise in high temperature superconducting thin-films of yttrium-barium-copper-oxide (YBa2Cu3O7) in the vicinity of artificial grain boundaries have been studied by means of a low critical temperature superconducting quantum interference device (SQUID...

  17. Electric characterization of grain boundaries in ionic conductors by impedance spectroscopy measurements in a bicrystal; Caracterizacion electrica de fronteras de grano en conductores ionicos mediante medidas de espectroscopia de impedancias en un bicristal

    Energy Technology Data Exchange (ETDEWEB)

    Frechero, M. A.; Rocci Riner Schmidt, M.; Diaz-Guillen, M.; Doaz-Guillen, M. R.; Dura, O.; Rivera-Calzada, A.; Santamaria, J.; Leon, C.

    2012-07-01

    Here we show impedance spectroscopy measurements on a bicrystal of the ionically conducting Yttria stabilized zirconia (YSZ). By using micrometer sized electrodes it is possible to measure ionic transport perpendicular to a single grain boundary, and characterize its electrical properties. We are thus able to obtain the microscopic parameters that determine the charge distribution at the grain boundary and the ionic transport through it, as the potential energy barrier {delta}{phi} = 0.35{+-}0.01 V at 275 degree centigrade, and the space charge layer thickness {lambda} = 5{+-}1 A. These values are significantly different from those previously obtained in polycrystalline ceramic samples of the same material, and show much better agreement with the values predicted by the Mott-Schottky model for the charge distribution and ionic transport through the grain boundary. (Author) 31 refs.

  18. Low voltage excess noise and shot noise in YBCO bicrystal junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.;

    2002-01-01

    The spectral density of background noise emitted by symmetric bicrystal YBaCuO Josephson junctions on sapphire substrates have been measured by a low noise cooled HEMT amplifier for bias voltages up to V approximate to 50 mV. At relatively low voltages V <4 mV a noticeable noise rise has been reg...

  19. A TEM and DLTS study of a near. Sigma. 25 CdTe bicrystal

    Energy Technology Data Exchange (ETDEWEB)

    Wang, N.; Haasen, P. (Inst. fuer Metallphysik, Univ. Goettingen (Germany))

    1991-11-16

    Cadmium precipitates are observed at the grain boundary (GB) of a CdTe bicrystal by means of transmission electron microscopy (TEM). In a simple model based on the theory of electron hopping, electrons can be excited by thermal activation and flow from boundary states to precipitates in the boundary. This model gives, in particular, a simple explanation for the emission properties of the precipitates, as determined by deep-level-transient spectroscopy (DLTS) on the bicrystal. (orig.).

  20. TEM and SEM (EBIC) investigations of silicon bicrystals

    Science.gov (United States)

    Gleichmann, R.; Ast, D. G.

    1983-01-01

    The electrical and structural properties of low and medium angle tilt grain boundaries in silicon bicrystals were studied in order to obtain insight into the mechanisms determining the recombination activity. The electrical behavior of these grain boundaries was studied with the EBIC technique. Schottky barriers rather than p-n junctions were used to avoid annealing induced changes of the structure and impurity content of the as-grown crystals. Transmission electron spectroscopy reveals that the 20 deg boundary is straight, homogeneous, and free of extrinsic dislocations. It is concluded that, in the samples studied, the electrical effect of grain boundaries appears to be independent of the boundary misorientation. The dominant influence appears to be impurity segregation effects to the boundary. Cleaner bicrystals are required to study intrinsic differences in the electrical activity of the two boundaries.

  1. Influence of surface structure of (0001 sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer

    Directory of Open Access Journals (Sweden)

    Ryan G. Banal

    2015-09-01

    Full Text Available AlN epilayers were grown on (0001 sapphire substrates by metal-organic vapor phase epitaxy, and the influence of the substrate’s surface structure on the formation of in-plane rotation domain is studied. The surface structure is found to change with increasing temperature under H2 ambient. The ML steps of sapphire substrate formed during high-temperature (HT thermal cleaning is found to cause the formation of small-angle grain boundary (SAGB. To suppress the formation of such structure, the use of LT-AlN BL technique was demonstrated, thereby eliminating the SAGB. The BL growth temperature (Tg is also found to affect the surface morphology and structural quality of AlN epilayer. The optical emission property by cathodoluminescence (CL measurement showed higher emission intensity from AlN without SAGB. The LT-AlN BL is a promising technique for eliminating the SAGB.

  2. Incipient plasticity during nanoindentation at grain boundaries in body-centered cubic metals

    NARCIS (Netherlands)

    Soer, WA; Aifantis, KE; De Hosson, JTM

    2005-01-01

    The mechanical response to nanoinclentation near grain boundaries has been investigated in an Fe-14%Si bicrystal with a general grain boundary and two Mo bicrystals with symmetric tilt boundaries, In particular, the indentations performed on the Fe-14%Si show that as the grain boundary is approached

  3. Influence of twist angle on crack propagation of nanoscale bicrystal nickel film based on molecular dynamics simulation

    Science.gov (United States)

    Zhang, Yanqiu; Jiang, Shuyong; Zhu, Xiaoming; Zhao, Yanan

    2017-03-01

    Tensile deformation of nanoscale bicrystal nickel film with twist grain boundary, which includes various twist angles, is investigated via molecular dynamics simulation to obtain the influence of twist angle on crack propagation. The twist angle has a significant influence on crack propagation. At the tensile strain of 0.667, as for the twist angles of 0°, 3.54° and 7.05°, the bicrystal nickel films are subjected to complete fracture, while as for the twist angles of 16.1° and 33.96°, no complete fracture occurs in the bicrystal nickel films. When the twist angles are 16.1° and 33.96°, the dislocations emitted from the crack tip are almost unable to go across the grain boundary and enter into the other grain along the slip planes {111}. There should appear a critical twist angle above which the crack propagation is suppressed at the grain boundary. The higher energy in the grain boundary with larger twist angle contributes to facilitating the movement of the glissile dislocation along the grain boundary rather than across the grain boundary, which leads to the propagation of the crack along the grain boundary.

  4. Thermal Conductance through Sapphire-Sapphire Bonding

    Science.gov (United States)

    Suzuki, T.; Tomaru, T.; Haruyama, T.; Shintomi, T.; Uchinyama, T.; Miyoki, S.; Ohashi, M.; Kuroda, K.

    2003-07-01

    Thermal conductance on sapphire-sapphire bonded interface has been investigated. Two pieces of single crystal sapphire bar with square cross section were bonded together by adhesion free bonding. In two sections of the bar, thermal conductivity was measured between 5 K to 300K. One section contains a bonded interface and the other section measured a thermal conductivity of the sapphire as a reference. No significant thermal resistance due to bonded interface was found from this measurement. Obtained thermal conductivity reaches κ 1 × 104 [W/m·K] in temperature range of T = 20 ˜ 30 K which is a planned operating temperature of a cryogenic mirror of the Large scale Cryogenic Gravitational wave telescope. It looks promising for sapphire bonding technique to improve a heat transfer from a large cryogenic mirror to susp ension wires.

  5. Domain walls in Fe(001) bicrystals-thickness dependence and field-induced transitions

    Energy Technology Data Exchange (ETDEWEB)

    Hanson, M. [Department of Applied physics, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)]. E-mail: maj.hanson@fy.chalmers.se; Brucas, R. [Department of Applied physics, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

    2007-03-15

    Magnetic domain walls (DW's) formed at the grain boundary (GB) of epitaxial bicrystal Fe(001) films, thickness t=50 and 70nm, were studied by magnetic force microscopy. The 'as-grown' samples displayed DW's with different magnetic contrast profiles yielding a single peak for t=50nm and a double peak with a change of sign at the centre of the wall for t=70nm. For t=50nm the wall is characterised as an asymmetric Bloch wall. The double peak of the 70nm thick film transformed into a single peak characteristic for a charged wall, when a field of 30mT was applied along the GB. At remanence this domain wall relaxed to a regular Bloch wall divided into segments of alternating signs.

  6. Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface.

    Science.gov (United States)

    Sun, Ce; Paulauskas, Tadas; Sen, Fatih G; Lian, Guoda; Wang, Jinguo; Buurma, Christopher; Chan, Maria K Y; Klie, Robert F; Kim, Moon J

    2016-06-03

    Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1-10]/(110) 4.8° tilt grain boundary reveals that the interface is composed of three distinct types of Lomer dislocations. Geometrical phase analysis is used to map strain fields, while STEM and density functional theory (DFT) modeling determine the atomic structure at the interface. The electronic structure of the dislocation cores calculated using DFT shows significant mid-gap states and different charge-channeling tendencies. Cl-doping is shown to reduce the midgap states, while maintaining the charge separation effects. This report offers novel avenues for exploring grain boundary effects in CdTe-based solar cells by fabricating controlled bicrystal interfaces and systematic atomic-scale analysis.

  7. Structure of shaped sapphire grown from multicapillary dies

    Science.gov (United States)

    Dobrovinskaya, E. R.; Litvinov, L. A.; Pischik, V. V.

    1990-07-01

    Peculiarities in grain structure development have been studied in sapphire crystals grown with multicapillary channels in the die to feed melt to the crystallization zone. A new mechanism of grain boundary formation based on gas-bubble collapse at the crystal-melt interface is proposed.

  8. DISLOCATIONS MOBILITY UNDER THE IMAGE FORCE EFFECT IN BICRYSTALS OF CFC MATERIALS: CU-X, X = PB, AL, AU, AG AND NI

    Directory of Open Access Journals (Sweden)

    A OUCHTATI

    2015-06-01

    Full Text Available The image force undergone by a matrix dislocations close and parallel to an interphase boundary is studied in Cu-X bicrystals (with X = Pb, Al, Au, Ag, Ni for disorientations ranging between 0° and 90°.  Dislocations have a Burgers vector  = a/2 [110]. The elastic energy of dislocation-boundary interaction is calculated within the framework of anisotropic linear elasticity. The elastic energy is related to the difference of the two metals shear moduli. It is about a few hundred pico Joule per meter. The image force can be repulsive or attractive according to the sign and the intensity of shear moduli difference. The isoenergy maps have various symmetries according to the disorientation.

  9. Experimental study of noise and Josephson oscillation linewidths in bicrystal YBCO junctions

    DEFF Research Database (Denmark)

    Constatinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.;

    2001-01-01

    The intensities of the noise in a bicrystal high-T-c (HTS) Josephson junction have been precision-measured at 1-2 GHz frequency band at bias voltages up to 50 mV at T = 4.2 K. At large bias voltages, V > 30 mV, the dependence of current noise density was found exactly coinciding with the Schottky...

  10. The 0 and pi contact array model of bicrystal junctions and interferometers

    DEFF Research Database (Denmark)

    Kornev, Victor K.; Soloviev, Igor I.; Klenov, Nikolai V.

    2003-01-01

    The array model of the faceted bicrystal Josephson junctions has been developed more comprehensively. The facet size and the facet critical current dependence on. magnetic field are taken in to consideration. The model can be successfully used with high-performance software meant for numerical si...

  11. Inversion domains in AlN grown on (0001) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  12. World's largest sapphire for many applications

    Science.gov (United States)

    Khattak, Chandra P.; Shetty, Raj; Schwerdtfeger, C. Richard; Ullal, Saurabh

    2016-10-01

    Sapphire has been used for many high technology applications because of its excellent optical, mechanical, high temperature, abrasion resistance and dielectric properties. However, it is expensive and the volume of sapphire used has been limited. The potential sapphire requirements for LED and consumer electronic applications are very high. Emphasis has been on producing larger sapphire boules to achieve significant cost reductions so these applications are realized. World's largest sapphire boules, 500 mm diameter 300+kg, have been grown to address these markets.

  13. Preparation and photocatalytic activity of bicrystal phase TiO2 nanotubes containing TiO2-B and anatase

    Science.gov (United States)

    Huang, Chuanxi; Zhu, Kerong; Qi, Mengyao; Zhuang, Yonglong; Cheng, Chao

    2012-06-01

    Bicrystal phase TiO2 nanotubes (NTS) containing monoclinic TiO2-B and anatase were prepared by the hydrothermal reaction of anatase nanoparticles with NaOH aqueous solution and a heat treatment. Their structure was characterized by XRD, TEM and Raman spectra. The results showed that the bicrystal phase TiO2 NTS were formed after calcining H2Ti4O9·H2O NTS at 573 K. The bicrystal phase TiO2 NTS exhibit significantly higher photocatalytic activity than the single phase anatase NTS and Dessuga P-25 nanoparticles in the degradation of Methyl Orange aqueous solution under ultraviolet light irradiation, which is attributed to the large surface and interface areas of the bicrystal phase TiO2 NTS.

  14. Pumping of titanium sapphire laser

    Science.gov (United States)

    Jelínková, H.; Vaněk, P.; Valach, P.; Hamal, K.; Kubelka, J.; Škoda, V.; Jelínek, M.

    1993-02-01

    Two methods of Ti:Sapphire pumping for the generation of tunable laser radiation in the visible region were studied. For coherent pumping, the radiation of the second harmonic of a Nd:YAP laser was used and a maximum output energy of E out=4.5 mJ was reached from the Ti:Sapphire laser. For noncoherent pumping, two different lengths of flashlamp pulses were used and a maximum of E out=300 mJ was obtained. Preliminary estimations of the wavelength range of tunability were made.

  15. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series...... of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  16. Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In this paper, large-sized sapphire (Φ230×210 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching, scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101~8.0×102 cm-2, in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally, the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.

  17. Hydrogen effect on the properties of sapphire

    Science.gov (United States)

    Mogilevsky, Radion N.; Sharafutdinova, Liudmila G.; Nedilko, Sergiy; Gavrilov, Valeriy; Verbilo, Dmitriy; Mittl, Scott D.

    2009-05-01

    Sapphire is a widely used material for optical, electronic and semiconductor applications due to its excellent optical properties and very high durability. Optical and mechanical properties of sapphire depend on many factors such as the starting materials that are used to grow crystals, methods to grow sapphire crystals, etc. Demand for highest purity and quality of sapphire crystals increased ten fold for the last several years due to new applications for this material. In this work we studied the effect of starting materials and crystal growth methods on the optical and mechanical properties of sapphire, especially concentrating on the effect of hydrogen on the properties of sapphire. It was found that the infrared (IR) absorption which is traditionally used to measure the hydrogen content in sapphire crystals cannot be reliably used and the data obtained by this method provides a much lower hydrogen concentration than actual. We have shown for the first time that Nuclear Magnetic Resonance techniques can be successfully used to determine hydrogen concentration in sapphire crystals. We have shown that hydrogen concentration in sapphire can reach thousands of ppm if these crystals are grown from Verneuil starting material or aluminum oxide powder. Alternatively, the hydrogen concentration is very low if sapphire crystals are grown from High Purity Densified Alumina (HPDA®) as a starting material. HPDA® is produced by EMT, Inc through their proprietary patented technology. It was found that optical and mechanical properties of sapphire crystals grown using EMT HPDA® starting material are much better than those sapphire crystals grown using a starting material of Verneuil crystals or aluminum oxide powder.

  18. The 0 and pi contact array model of bicrystal junctions and interferometers

    DEFF Research Database (Denmark)

    Kornev, Victor K.; Soloviev, Igor I.; Klenov, Nikolai V.;

    2003-01-01

    simulation of the lumped Josephson junction circuits, e.g., PSCAN, WinS. The based on the model results for critical current dependence on applied magnetic field are compared with experimental data for the bicrictal junctions fabricated by dc sputtering at high pressure. Impact of no sinusoidal Josephson......The array model of the faceted bicrystal Josephson junctions has been developed more comprehensively. The facet size and the facet critical current dependence on. magnetic field are taken in to consideration. The model can be successfully used with high-performance software meant for numerical...... current-phase relation on the dc interferometer critical current as a function of magnetic field is analyzed as well....

  19. Tl2Ba2CaCu2Ox Bicrystal Junction DC-SQUID Magnetometers Operating in Unshielded Environment

    Institute of Scientific and Technical Information of China (English)

    HAN Bing; CHEN Geng-Hua; CHEN Geng-Hua; ZHAO Shi-Ping; YANG Qian-Sheng; YAN Sha-Lin; LU Rong-Tao

    2000-01-01

    We fabricated direct-current superconducting quantum interference device magnetometers with single layer epitaxial Tl2Ba2CaCu2Ox films on 36.8°SrTiO3 bicrystal substrates. The white flux noise and the field-flux transformation coeficient of the devices are 1.5×10-5 φ0(/Hz) and 40 nT/φ0, respectively. The magnetometers can work in unshielded environment.

  20. Sapphire Viewports for a Venus Probe Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed Phase 1 program will demonstrate that sapphire viewports are feasible for use in Venus probes. TvU's commercial viewport products have demonstrated that...

  1. A high-temperature superconducting delta-sigma modulator based on a multilayer technology with bicrystal Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ruck, B.; Chong, Y.; Dittmann, R.; Engelhardt, A.; Sodtke, E.; Siegel, M. [Institut fur Schicht- und Ionentechnik (ISI), Forschungszentrum Julich GmbH, 52425 Juelich (Germany)

    1999-11-01

    We have designed, fabricated and successfully tested a first-order delta-sigma modulator using a high-temperature superconducting multilayer technology with bicrystal Josephson junctions. The circuit has been fabricated on a SrTiO{sub 3} bicrystal substrate. The YBa{sub 2}Cu{sub 3}O{sub 7}/SrTiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7} trilayer was fabricated by laser deposition. The bottom layer served as a superconducting ground plane. The Josephson junctions were formed at the bicrystal line in the upper layer. The integrator resistance has been made from a Pd/Au thin film. The circuit consists of a dc-SFQ converter, a Josephson transmission line, a comparator, an L/R integrator and an output stage. The correct operation of the modulatorhas been tested using dc measurements. The linearity of the modulator was studied by measuring the harmonic distortions of a 19.5 kHz sine wave input signal. From the recorded spectrum, a minimum resolution of at least 5 bits can be estimated. This accuracy was limited by the noise of the preamplifier. The correct operation of the current feedback loop was demonstrated by cutting the feedback inductance. (author)

  2. A high-temperature superconducting delta-sigma modulator based on a multilayer technology with bicrystal Josephson junctions

    Science.gov (United States)

    Ruck, B.; Chong, Y.; Dittmann, R.; Engelhardt, A.; Sodtke, E.; Siegel, M.

    1999-11-01

    We have designed, fabricated and successfully tested a first-order delta-sigma modulator using a high-temperature superconducting multilayer technology with bicrystal Josephson junctions. The circuit has been fabricated on a SrTiO3 bicrystal substrate. The YBa2Cu3O7/SrTiO3/YBa2Cu3O7 trilayer was fabricated by laser deposition. The bottom layer served as a superconducting groundplane. The Josephson junctions were formed at the bicrystal line in the upper layer. The integrator resistance has been made from a Pd/Au thin film. The circuit consists of a dc-SFQ converter, a Josephson transmission line, a comparator, an L/R integrator and an output stage. The correct operation of the modulator has been tested using dc measurements. The linearity of the modulator was studied by measuring the harmonic distortions of a 19.5 kHz sine wave input signal. From the recorded spectrum, a minimum resolution of at least 5 bits can be estimated. This accuracy was limited by the noise of the preamplifier. The correct operation of the current feedback loop was demonstrated by cutting the feedback inductance.

  3. Secondary particle emission from sapphire single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Minnebaev, K.F., E-mail: minnebaev@mail.ru [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Khvostov, V.V.; Zykova, E.Yu.; Tolpin, K.A. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Colligon, J.S. [Manchester Metropolitan University, Chester Street, Manchester M1 5GD (United Kingdom); Yurasova, V.E. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    Secondary ion emission from sapphire single crystal has been studied experimentally and by means of computer simulation. The particular oscillations of secondary ion energy spectra and two specific maxima of O{sup +} and Al{sup +} ions were observed under irradiation of (0001) sapphire face by 1 and 10 keV Ar{sup +} ions. We have explained this by the interplay of the charge exchange processes between moving particles and solids. The existence of two maxima in energy spectra of O{sup +} and Al{sup +} secondary ions can be also connected with special features of single-crystal sputtering: the low-energy peak can be formed by random sputtering and the high-energy peak from focusing collisions. In addition some similarity was found between the positions of low-energy maximum in energy spectra of Al{sup +} ions emitted from sapphire and the principal maxima of Al{sup +} ions ejected from the aluminum single crystal. This indicates a possibility to explain the presence of low-energy maximum in energy spectra of secondary ions ejecting from sapphire by emission of Al{sup +} ions from aluminum islands appearing in a number of cases on the sapphire surface due to preferential sputtering of oxygen. These different mechanisms of creating the energy spectra of ions emitted from sapphire should be taken in account.

  4. Influence of Grain Boundary on Melting

    Institute of Scientific and Technical Information of China (English)

    王暾; 周富信; 刘曰武

    2001-01-01

    The temperature behaviour of an Al bicrystal with surfaces consisting of (110) and (111) crystals is simulated using molecular dynamics. The result shows that the (110) crystal losses its crystalline order at 820K, whereas the disorder does not propagate through the (111) crystal at this temperature. Instead, some disordered atoms are recrystallized into the (111) crystal and the initial grain boundary changes into a stable order-disorder interface. Thus, it was discovered that at a temperature near its melting point, the (111) crystal grew and obstructed the propagation of disorder. Such an obstruction is helpfulfor understanding melting.

  5. Method of surface treatment on sapphire substrate

    Institute of Scientific and Technical Information of China (English)

    NIU Xin-huan; LIU Yu-ling; TAN Bai-mei; HAN Li-ying; ZHANG Jian-xin

    2006-01-01

    Sapphire single crystals are widely used in many areas because of the special physic properties and important application value. As an important substrate material,stringent surface quality requirements,i.e. surface finish and flatness,are required. The use of CMP technique can produce high quality surface finishes at low cost and with fast material removal rates. The sapphire substrate surface is treated by using CMP method. According to sapphire substrate and its product properties,SiO2 sol is chosen as abrasive. The particle size is 15-25 nm and the concentration is 40%. According to the experiment results,pH value is 10.5-11.5. After polishing and cleaning the sapphire surface,the surface roughness was measured by using AFM method and the lowest value of Ra 0.1 nm was obtained. From the results,it can be seen that using such method,the optimal sapphire surface can be gotten,which is advantageous for epitaxial growth and device making-up.

  6. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  7. Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

    Science.gov (United States)

    Deluca, J. J. (Inventor)

    1979-01-01

    An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

  8. A comparative study on methods to structure sapphire

    NARCIS (Netherlands)

    Crunteanu, A.; Hoffmann, P.; Pollnau, M.; Buchal, C.

    2003-01-01

    Ti:sapphire is an attractive material for applications as a tunable or short-pulse laser and as a broadband light source in low-coherence interferometry. We investigated several methods to fabricate rib structures in sapphire that can induce channel waveguiding in Ti:sapphire planar waveguides. Thes

  9. On the relationship between grain-boundary migration and grain-boundary diffusion by molecular-dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Schoenfelder, B. [Argonne National Lab., IL (United States). Materials Science Div.]|[RWTH Aachen (Germany). Inst. fuer Metallkunde und Metallphysik; Keblinski, P.; Wolf, D.; Phillpot, S.R. [Argonne National Lab., IL (United States). Materials Science Div.

    1998-07-01

    A molecular-dynamics method for the simulation of the intrinsic migration behavior of individual, flat grain boundaries is presented. A constant driving force for grain-boundary migration is generated by imposing an anisotropic elastic strain on a bicrystal such that the elastic-energy densities in its two halves are different. For the model case of the large-planar-unit-cell, high-angle (001) twist boundary in Cu the authors demonstrate that the drift velocity is proportional to the applied driving force, thus enabling determination of the boundary mobility. The activation energy for grain-boundary migration is found to be distinctly lower than that for grain-boundary self-diffusion. A decrease in the related activation energies with increasing temperature is shown to arise from a crossover in the underlying mechanisms, from solid-like at low temperatures to liquid-like at high-temperatures that is accompanied by an underlying grain-boundary structural transition.

  10. Numerical computation of sapphire crystal growth using heat exchanger method

    Science.gov (United States)

    Lu, Chung-Wei; Chen, Jyh-Chen

    2001-05-01

    The finite element software FIDAP is employed to study the temperature and velocity distribution and the interface shape during a large sapphire crystal growth process using a heat exchanger method (HEM). In the present study, the energy input to the crucible by the radiation and convection inside the furnace and the energy output through the heat exchanger is modeled by the convection boundary conditions. The effects of the various growth parameters are studied. It is found that the contact angle is obtuse before the solid-melt interface touches the sidewall of the crucible. Therefore, hot spots always appear in this process. The maximum convexity decreases significantly when the cooling-zone radius (RC) increases. The maximum convexity also decreases significantly as the combined convection coefficient inside the furnace (hI) decreases.

  11. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    2008-01-01

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in orde

  12. Sapphire and other dielectric waveguide devices

    NARCIS (Netherlands)

    Pollnau, Markus

    Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in

  13. Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Grabowska, J.; Rajendra Kumar, R.T. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); McGlynn, E. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)], E-mail: enda.mcglynn@dcu.ie; Nanda, K.K. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); Newcomb, S.B. [Glebe Scientific Ltd., Newport, Co. Tipperary (Ireland); McNally, P.J.; O' Reilly, L. [School of Electronic Engineering/Research Institute for Networks and Communications Engineering, Dublin City University (Ireland); Mosnier, J.-P.; Henry, M.O. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)

    2008-02-29

    Epitaxially ordered zinc aluminate domains with sub-micron dimensions are formed on bare c-sapphire substrates using a vapour phase method (with vapour generated by carbothermal reduction of ZnO) at various temperatures and growth durations. A zinc aluminate (ZnAl{sub 2}O{sub 4}) layer is formed by reaction of the source materials (Zn and O) with the substrate. We observe crystallites with a well-defined epitaxial relationship on the sapphire substrate in addition to polycrystalline material. The epitaxially oriented deposit displays the form of characteristically twinned (singly or multiply) grains of sub-micron dimensions with three variants, consistent with the c-sapphire substrate symmetry. Scanning electron microscopy and transmission electron microscopy studies show that the formation of these grains is associated with the presence of extended defects in the sapphire substrate. Epitaxially ordered grains formed at higher temperatures show a change in the nature of the twin boundaries and epitaxial relations as a function of growth time, attributed to the effects of annealing during growth.

  14. Advanced thin dicing blade for sapphire substrate

    Directory of Open Access Journals (Sweden)

    Koji Matsumaru, Atsushi Takata and Kozo Ishizaki

    2005-01-01

    Full Text Available Advanced thin dicing blades for cutting sapphire were fabricated and evaluated for cutting performance with respect to dicing blade wear and meandering of cutting lines. Three kinds of different commercial blades were used to compare the cutting performance. These blades had the same thickness and the same diamond grain size. The matrix material of one dicing blade was nickel–phosphorus alloy and two other were a vitric material. Newly developed dicing blades consisted of a vitric material with pore. A dicing machine was used for cutting sapphire. Turning velocity, cutting depth and feeding rate were 20,000 min−1, 200 μm and 1 mm s−1, respectivity. Cutting directions were 110 and 010. All blades could cut 1000 mm and more in the 110 direction. On the other hand, commercial dicing blades generated meandering lines and were broken only by 50 mm of cutting length in 010 direction. Fabricated blade can cut 1000 mm and more in 010 direction. The wear of fabricated dicing blade was the largest in the dicing blades. Although cutting performance of commercial dicing blades depended on the sapphire orientation, that of fabricated blade was independent of the sapphire orientation. It has been confirmed that the fabricated dicing blade was kept a cutting ability by flash diamonds on the dicing blade surface, which were created by wear of blade during cutting sapphire. Low cutting ability of commercial blades increased cutting force between with increase of cutting length. The increased cutting force produced to bend a blade and cutting lines, and finally a fracture of blade.

  15. Effect of Interface on the Deformation of Aluminium Bicrystal: Atomistic Simulation Study

    Directory of Open Access Journals (Sweden)

    Yan Shaohua

    2016-01-01

    Full Text Available Molecular dynamic (MD simulation has been conducted to study the effect of interface structure on the mechanical response of eight symmetric tilt grain boundaries in high stacking-fault Al. It is found that the grain boundaries with E structure unit (SU have higher energy, but the grain boundary energy alone cannot be used as a parameter to determine the mechanical properties of grain boundary. The SUs, especially E units, do have an influence on the mechanical response of grain boundaries. Our results show that the dislocation imitates from E units preferably, but this depends on the dissociation at grain boundary.

  16. Non-uniform Stress Field and Stress Concentration Induced by Grain Boundary and Triple Junction of Tricrystal

    Institute of Scientific and Technical Information of China (English)

    Jiansong WAN; Zhufeng YUE

    2003-01-01

    The stress characteristics in the anisotropic bicrystal and tricrystal specimens were analyzed using the anisotropic elastic model, orthotropic Hill's model and rate-dependent crystallographic model. The finite element analysis results show that non-uniform stresses are induced by the grain boundary. For bicrystal specimens in different crystallographic orientations, there exist stress concentrations and high stress gradients nearby the boundaries. The activation and slipping of the slip systems are dependent on the crystallographic orientations of the grains and also on the relative crystallographic orientations of the two adjoining grains. For the tricrystal specimens, there is not always any stress concentrations in the triple junction, and the concentration degree depends on the relative crystallographic orientations of the three grains. Different from the bicrystal specimens, there may be or no stress concentration in the vicinity of grain boundaries for the tricrystal specimens, which depends on the relative crystallographic orientations of the three grains. The stress concentration near to the grain boundaries and triple junction can be high enough for the local plastic deformation, damage and voiding or cracking even when the whole specimen is still under the elastic state.It can be further concluded that homogeneous assumption for polycrystalline materials is not suitable to study the detailed meso- or micro-mechanisms for damaging and fracturing.

  17. Interactions between displacement cascades and Σ3 tilt grain boundaries in Cu

    Science.gov (United States)

    Li, Bo; Long, Xiao-Jiang; Shen, Zhao-Wu; Luo, Sheng-Nian

    2016-12-01

    With large-scale molecular dynamics simulations, we investigate systematically the interaction of displacement cascades with a set of Σ3 tilt grain boundaries (GBs) in Cu bicrystals at low ambient temperatures, as regards irradiation-induced defect production/absorption and GB migration/faceting. Except for coherent twin boundary, GBs exhibit pronounced preferential absorption of interstitials, which depends on initial primary knock-on atom distance from GB plane and inclination angle. GB migration occurs when displacement cascades overlap with a GB plane, as induced by recrystallization of thermal spike, and concurrent asymmetric grain growth. Faceting occurs via expanding coherent twin boundaries for asymmetric GBs.

  18. Surface modification of sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  19. The growth of sapphire single crystals

    Directory of Open Access Journals (Sweden)

    STEVAN DJURIC

    2001-06-01

    Full Text Available Sapphire (Al2O3 single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation wc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  20. Mathematical analysis and STEM observations of arrangement of structural units in 〈001〉 symmetrical tilt grain boundaries.

    Science.gov (United States)

    Inoue, Kazutoshi; Saito, Mitsuhiro; Chen, Chunlin; Kotani, Motoko; Ikuhara, Yuichi

    2016-12-01

    A collaborative work between mathematics and atom-resolved scanning transmission electron microscopy (STEM) has been conducted. The grain boundary in a bicrystal of a simple rock-salt oxide can show a complicated arrangement of structural units, which can be well predicted by an algorithm utilizing the Farey sequence. The estimated arrangements had a nice agreement with those observed by STEM in atomic-scale up to several tens of nanometers.

  1. Photonic detection and characterization of DNA using sapphire microspheres

    OpenAIRE

    Serpengüzel, Ali; Murib, Mohammed Sharif; Yeap, Weng-Siang; Martens, Daan; Bienstman, Peter; De Ceuninck, Ward; van Grinsven, Bart; Schoening, Michael J.; Michiels, Luc; Haenen, Ken; Ameloot, Marcel; Wagner, Patrick

    2014-01-01

    A microcavity-based deoxyribonucleic acid (DNA) optical biosensor is demonstrated for the first time using synthetic sapphire for the optical cavity. Transmitted and elastic scattering intensity at 1510 nm are analyzed from a sapphire microsphere (radius 500 mu m, refractive index 1.77) on an optical fiber half coupler. The 0.43 nm angular mode spacing of the resonances correlates well with the optical size of the sapphire sphere. Probe DNA consisting of a 36-mer fragment was covalently immob...

  2. Sapphire Multiple Filament and Large Plate Growth Processes

    Science.gov (United States)

    1972-10-01

    for sapphire filaments is scrap white verneuil -grown sapphire boules. These boules are processed here at Tyco to achieve the proper mesh size...entrapped liquid freeze, they shrink, resulting in voids. Raw material for our growth process is provided by use of scap verneuil sapphire boules. In...J ;~ ;t" ,, ,, .. ::~ ,:~~\\i : i .<’\\ :1 ’ r .,l,, .. ’ ... :,J_ ’ ’~~ .. ;~ 1-.. i d;·, AFML-TR -7---190 1;).-- SAPPHIRE MULTIPLE

  3. REINFORCEMENT OF NICKEL CHROMIUM ALLOYS WITH SAPPHIRE WHISKERS.

    Science.gov (United States)

    SAPPHIRE, COMPOSITE MATERIALS, CERAMIC FIBERS , CERAMIC FIBERS , TITANIUM COMPOUNDS, ZIRCONIUM COMPOUNDS, HYDRIDES, ADDITIVES, CHROMIUM ALLOYS, FIBER METALLURGY, IRON COMPOUNDS, ENCAPSULATION, DENSITY, SURFACE TENSION.

  4. Thermally driven grain boundary migration and melting in Cu.

    Science.gov (United States)

    Li, Y H; Wang, L; Li, B; E, J C; Zhao, F P; Zhu, J; Luo, S N

    2015-02-07

    With molecular dynamics simulations, we systematically investigate melting of a set of Σ3〈110〉70.53° tilt grain boundaries (GB) in Cu bicrystals, including coherent twin boundaries (CTBs), 12 asymmetric tilt grain boundaries (ATGBs), and symmetric incoherent twin boundaries (SITBs), in the order of increasing length weight of SITB or GB energy. ATGBs decompose into CTBs and SITBs, which migrate and coalesce as a result of internal stress relaxation. GBs can be superheated or premelted, and GB melting temperature decreases exponentially with increasing SITB weight, owing to the systematics in GB microstructure. GB melting nucleates at disordered CTB-SITB junctions, and grows along SITBs and then into grain interiors, with the solid-liquid interfaces preferentially aligned with {111}.

  5. Measurement and analysis of grain boundary grooving by volume diffusion

    Science.gov (United States)

    Hardy, S. C.; Mcfadden, G. B.; Coriell, S. R.; Voorhees, P. W.; Sekerka, R. F.

    1991-01-01

    Experimental measurements of isothermal grain boundary grooving by volume diffusion are carried out for Sn bicrystals in the Sn-Pb system near the eutectic temperature. The dimensions of the groove increase with a temporal exponent of 1/3, and measurement of the associated rate constant allows the determination of the product of the liquid diffusion coefficient D and the capillarity length Gamma associated with the interfacial free energy of the crystal-melt interface. The small-slope theory of Mullins is generalized to the entire range of dihedral angles by using a boundary integral formulation of the associated free boundary problem, and excellent agreement with experimental groove shapes is obtained. By using the diffusivity measured by Jordon and Hunt, the present measured values of Gamma are found to agree to within 5 percent with the values obtained from experiments by Gunduz and Hunt on grain boundary grooving in a temperature gradient.

  6. Structure of the Dislocation in Sapphire

    DEFF Research Database (Denmark)

    Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.;

    1976-01-01

    of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection......Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...

  7. Millimeter wave inducing subharmonic steps in the Tl2Ba2CaCu2O8 thin film bicrystal Josephson junction

    Science.gov (United States)

    Liu, X.; Hu, L.; Xie, W.; Wang, P.; Ma, L. J.; Zhao, X. J.; He, M.; Zhang, X.; Ji, L.

    2015-04-01

    The bicrystal Josephson junction (BJJ) was fabricated by patterning microbridge into Tl2Ba2CaCu2O8 (Tl-2212) thin film grown epitaxially on the bicrystal SrTiO3 (STO) substrate. The millimeter wave responses of BJJ were researched by experiment and numerical simulation. Shapiro steps and subharmonic steps were both observed in the current-voltage (I-V) curve at the liquid nitrogen temperature. In the resistive-capacitive-inductive shunted junction (RCLSJ) model, both of the Shapiro steps and subharmonic steps were reproduced with varying capacitances and inductances. The result of simulation has a good agreement with the experiment. The relative large capacitance and inductance correspond to distinct subharmonic steps.

  8. Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

  9. Deformation of nanocrystalline binary aluminum alloys with segregation of Mg, Co and Ti at grain boundaries

    Science.gov (United States)

    Zinovev, A. V.; Bapanina, M. G.; Babicheva, R. I.; Enikeev, N. A.; Dmitriev, S. V.; Zhou, K.

    2017-01-01

    The influence of the temperature and sort of alloying element on the deformation of the nanocrystalline (NC) binary Al alloys with segregation of 10.2 at % Ti, Co, or Mg over grain boundaries has been studied using the molecular dynamics. The deformation behavior of the materials has been studied in detail by the simulation of the shear deformation of various Al bicrystals with the grain-boundary segregation of impurity atoms, namely, Ti, Co, or Mg. The deformation of bicrystals with different grain orientation has been studied. It has been found that Co introduction into grain boundaries of NC Al has a strengthening effect due to the deceleration of the grain-boundary migration (GBM) and difficulty in the grain-boundary sliding (GBS). The Mg segregation at the boundaries greatly impedes the GBM, but stimulates the development of the GBS. In the NC alloy of Al-Ti, the GBM occurs actively, and the flow-stress values are close to the values characteristic of pure Al.

  10. Rain Erosion Behavior of Silicon Dioxide Films Prepared on Sapphire

    Institute of Scientific and Technical Information of China (English)

    Liping FENG; Zhengtang LIU; Wenting LIU

    2005-01-01

    Silicon dioxide (SiO2) films were prepared on sapphire (α-Al2O3) by radio frequency magnetron reactive sputtering in order to in crease both transmission and rain erosion resistant performance of infrared domes of sapphire. Composition and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD),respectively. The transmittance of uncoated and coated sapphire was measured using a Fourier transform infrared(FTIR) spectrometer. Rain erosion tests of the uncoated and coated sapphire were performed at 211 m/s impact velocity with an exposure time ranging from 1 to 8 min on a whirling arm rig. Results show that the deposited films can greatly increase the transmission of sapphire in mid-wave IR. After rain erosion test, decreases in normalized transmission were less than 1% for designed SiO2 films and the SiO2 coating was strongly bonded to the sapphire substrate. In addition, sapphires coated with SiO2 films had a higher transmittance than uncoated ones after rain erosion.

  11. Effect of Propellant Combustion on Sapphire

    Directory of Open Access Journals (Sweden)

    Mark L. Bundy

    2000-10-01

    Full Text Available Sapphire (Al2O3 is the window material of choice for laser beam transmission into the combustion chamber of laser-ignited guns. To evaluate the long-term effects of propellant combustion on an Al/sub 2/O/sub 3/ laser window, it is important to know the window temperature during firing. This paper presents temperature data on an Al/sub 2/O/sub 3/ sample located in the breech face of the gun where the laser window would be in a laser-ignited 155 mm(M199 cannon. Al/sub 2/O/sub 3/ sample is a substrate material of a commercially sold thin-film thermocouple, and is therefore thermally, if not optically, representative of an actual Al/sub 2/O/sub 3/ laser window.

  12. Ruby and sapphire from Jegdalek, Afghanistan

    Science.gov (United States)

    Bowersox, G.W.; Foord, E.E.; Laurs, B.M.; Shigley, J.E.; Smith, C.P.

    2000-01-01

    This study provides detailed mining and gemological information on the Jegdalek deposit, in east-central Afghanistan, which is hosted by elongate beds of corundum-bearing marble. Some facet-grade ruby has been recovered, but most of the material consists of semitransparent pink sapphire of cabochon or carving quality. The most common internal features are dense concentrations of healed and nonhealed fracture planes and lamellar twin planes. Color zoning is common, and calcite, apatite, zircon, mica, iron sulfide minerals, graphite, rutile, aluminum hydroxide, and other minerals are also present in some samples. Although the reserves appear to be large, future potential will depend on the establishment of a stable government and the introduction of modern mining and exploration techniques. ?? 2000 Gemological Institute of America.

  13. Synthesis of titanium sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1998-06-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al{sub 2}O{sub 3}) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al{sub 2}O{sub 3} waveguide laser. The implantation of Ti and O ions into c-axis oriented {alpha}-Al{sub 2}O{sub 3} followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti{sup 3+} ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of {approx} .6 to .9 {mu}m, similar to that expected from Ti{sup 3+}. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al{sub 2O}3 waveguide. (authors). 8 refs., 3 figs.

  14. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  15. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  16. Study on the Anisotropy of Meniscus in the Growing Sapphire

    Institute of Scientific and Technical Information of China (English)

    YAO Tai; ZUO Hong-bo; HAN Jie-cai; MENG Song-he; ZHANG Ming-fu; LI Chang-qing; Grigoryan Benik

    2006-01-01

    This study is aimed at predicting the relationship between the meniscus and the quality of the sapphire crystals produced by the micro-pulling and shoulder at cooled center (SAPMIC) technique. As with different orientations, the shapes of the meniscus vary, so an investigation into the anisotropy of the meniscus shapes is very important for the final quality of the sapphire crystal. An effective model to describe meniscus shapes and their formation process has been presented. The model has been applied to a sapphire crystal of 200 mm diameter in order to check its reliability. The results show that the model proves to be useful for forecasting the final shapes of the sapphire crystal made by the SAPMIC technique.

  17. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  18. Second generation 50 K dual-mode sapphire oscillator.

    Science.gov (United States)

    Anstie, James D; Hartnett, John G; Tobar, Michael E; Ivanov, Eugene N; Stanwix, Paul L

    2006-02-01

    Low-temperature, high-precision sapphire resonators exhibit a turning point in mode frequency-temperature dependence at around 10 K. This, along with sapphire's extremely low dielectric losses at microwave frequencies, results in oscillator fractional frequency stabilities on the order of 10(-15). At higher temperatures the lack of a turning point makes single-mode oscillators very sensitive to temperature fluctuations. By exciting two quasi-orthogonal whispering gallery (WG) modes in a single sapphire resonator, a turning point in the frequency-temperature dependence can be found in the beat frequency between the two modes. A temperature control technique based on mode frequency temperature dependence has been used to maintain the sapphire at this turning point and the fractional frequency instability of the beat frequency has been measured to be at a level of 4.3 X 10(-14) over 1 s, dropping to 3.5 X 10(-14) over 4 s integration time.

  19. Nanostructured sapphire optical fiber for sensing in harsh environments

    Science.gov (United States)

    Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

    2017-05-01

    We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

  20. Neutron Transmission through Sapphire Crystals: Experiments and Simulations

    OpenAIRE

    Rantsiou, Emmanouela; Filges, Uwe; Panzner, Tobias; Klinkby, Esben Bryndt

    2013-01-01

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Thosesimulations were part of the effort of validating and improving the newly developed interface between...

  1. Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1−xKxFe2As2 superconductors

    KAUST Repository

    Wang, Lei

    2011-06-01

    We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystallineSr0.6K0.4Fe2As2superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while some others contain nanometer-scale crystallites sandwiched in between amorphous layers. We also find that there is significant oxygen enrichment at the grain boundaries. Such results explain the relatively low transport critical current density (Jc) of polycrystalline samples with respect to that of bicrystal films.

  2. Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire.

    Science.gov (United States)

    Perillat-Merceroz, G; Thierry, R; Jouneau, P H; Ferret, P; Feuillet, G

    2012-03-30

    Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

  3. Investigation of sapphire detector designed for single particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Karacheban, Olena; Hempel, Maria [DESY, Zeuthen (Germany); Brandenburg University of Technology, Cottbus (Germany); Afanaciev, Konstantin [NCPHEP, Minsk (Belarus); Henschel, Hans; Lange, Wolfgang; Leonard, Jessica [DESY, Zeuthen (Germany); Levy, Itamar [Tel Aviv University, Tel Aviv (Israel); Lohmann, Wolfgang [Brandenburg University of Technology, Cottbus (Germany); CERN, Geneva (Switzerland); Novgorodova, Olga [Technical University, Dresden (Germany); Schuwalow, Sergej [DESY, Hamburg (Germany)

    2015-07-01

    For beam halo and beam loss monitoring systems at accelerators extremely radiation hard sensors are needed. Single crystal sapphire is a promising material. Industrially grown sapphire wafers are available in large sizes, are low in cost and can be operated at room temperature. Currently sapphire sensors are used for a beam-loss monitor at FLASH,detecting bunches of particles crossing the sensors simultaneously. Here we present a multichannel detector designed for single minimum ionising particle detection using a stack of sapphire plates. The performance of the detector was studied in a 5 GeV electron beam at DESY-II. The detector was operated together with the EUDET beam telescope, which allowed the reconstruction of the position of the hits at the detector. For each sapphire plate the charge collection efficiency was measured as a function of the bias voltage and the signal size as a function of the hit position with respect to the metal electrodes. The data confirms that mainly electrons contribute to the signal. Based on these results the next generation sapphire detector will be designed.

  4. Ti : sapphire laser synchronised with femtosecond Yb pump laser via nonlinear pulse coupling in Ti : sapphire active medium

    Science.gov (United States)

    Didenko, N. V.; Konyashchenko, A. V.; Konyashchenko, D. A.; Kostryukov, P. V.; Kuritsyn, I. I.; Lutsenko, A. P.; Mavritskiy, A. O.

    2017-02-01

    A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb3+-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model.

  5. Preparation of high-quality HTS rings for application in the magnetic bearing of cryotanks and pinning in grain boundaries

    Science.gov (United States)

    Bringmann, B.; Walter, H.; Jooss, Ch.; Leenders, A.; Freyhardt, H. C.

    2002-08-01

    Seeded melt growth of YBCO high-temperature superconductors is one of the most promising preparation techniques to obtain high-quality HTS tiles for application, e.g. in magnetic bearings. Semi-finished HTSL products of complex shapes have to be developed by different seeding and multi-seeding techniques. To obtain large hollow cylinders designed for application in the magnetic bearing of a cryotank a modified multi-seeded melt growth (MSMG) process was employed. This cryotank will be mounted for testing in a vehicle of a major German car manufacturer. The MSMG process introduces grain boundaries into the HTS tiles. For transport current investigations of [0 0 1]-tilt grain boundaries in melt textured YBCO a series of MSMG bicrystals have been prepared. They exhibit a dependence of the critical current density on misorientation angle which is much weaker than the one observed in thin-film bicrystals. The bulk samples have dimensions larger than the magnetic penetration depth along the grain boundary. Thus, flux pinning has to be taken into account. Different contributions to the longitudinal pinning force have to be considered: vortices at grain boundaries can be pinned by magnetic interaction with Abrikosov vortices in the banks, by defects in the grain boundary itself or by defects which are located next to the grain boundary.

  6. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

    Science.gov (United States)

    Miyake, Hideto; Lin, Chia-Hung; Tokoro, Kenta; Hiramatsu, Kazumasa

    2016-12-01

    The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped "face-to-face" to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1600-1700 °C. The full widths at half maximum of the (0002)- and (10 1 bar2)-plane X-ray rocking curves were improved to 49 and 287 arcsec, respectively, owing to the annihilation of domain boundaries in the sputtered AlN films, which concurrently increased the compressive stress in the films.

  7. GaN on sapphire mesa technology

    Energy Technology Data Exchange (ETDEWEB)

    Herfurth, Patrick; Men, Yakiv; Kohn, Erhard [Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein Allee 45, 89081 Ulm (Germany); Roesch, Rudolph [Institute of Optoelectronics, Albert-Einstein Allee 45, 89081 Ulm (Germany); Carlin, Jean-Francois; Grandjean, Nicolas [Laboratory of Advanced Semiconductors for Photonics and Electronics, Ecole Polytechnique Federal de Lausanne, 1015 Lausanne (Switzerland)

    2012-03-15

    This contribution reports on a GaN on sapphire mesa technology for lattice matched InAlN/GaN HEMTs similar to a silicon on insulator technology. Ultrathin buffer layers between 500 nm and 100 nm have been deep mesa etched down to the substrate to avoid cross talk between devices through the buffer and provide full transparency outside the active device area (of special interest to biochemical sensor applications).The heterostructure characteristics were: N{sub S}> 1.6 x 10{sup 13} cm{sup -2}, R{sub sh}< 600 {omega}/{open_square}. 0.25 {mu}m gate length HEMT device characteristics are moderate, but essentially similar down to 200 nm buffer thickness. Devices on 100 nm buffer layer are still difficult to reproduce. I{sub on}/I{sub off} was up to 10{sup 9} and sub-threshold slopes down to 90 mV/dec (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Atomistic simulations of grain boundary migration in face centred cubic metals

    OpenAIRE

    Schönfelder, Bernd

    2004-01-01

    In this work, atomistic grain boundary (GB) migration and GB self-diffusion simulations of planar [001] twist GBs as well as various planar tilt GBs in face-centred cubic bicrystals have been performed. The utilized simulation method of choice was molecular dynamics (MD). Due to the planar geometry of the studied GBs, no driving force (DF) on the GB is exerted due to GB curvature. Therefore one necessary and important feature of this work was to derive DF concepts to drive planar GBs continuo...

  9. Grain boundaries analysis in polycrystalline silicon by TEM

    Energy Technology Data Exchange (ETDEWEB)

    Komninou, F.; Karakostas, T.; Bleris, G.L.; Economou, N.A. (Aristoteles University, Thessaloniki (Greece))

    1982-01-01

    Polycrystalline Si interfaces were examined within the CSL's approach. The rotation relationship of every bicrystal has been analyzed with the technique of the instrumental system and the small angle description has been used for the CSL characterization. The most frequently occuring descriptions are CSL' ..sigma..=3 coherent and incoherent twins, the later being microscopically coherent. Cases of multiple boundaries were also examined and interelations were found between low or high angle boundaries for CSL's with ..sigma..>3. A special case of interest is a ..sigma..=39 CSL which is formed from a combination of ..sigma..=13b and ..sigma..=3 and is a triclinic CSL lacking 180/sup 0/ rotational operations. The results presented indicate that for polycrystalline Si the CSL model could be used in describing the interfaces occuring.

  10. The influence of grain boundary structure on the penetration of gallium into aluminum grain boundaries

    Science.gov (United States)

    Hugo, Richard Charles

    1998-12-01

    Liquid Metal Embrittlement is a form of environmental embrittlement that dramatically reduces the fracture toughness of many metals and alloys. It occurs when surfaces of certain solid metals are wet by certain liquid metals. The Al-Ga system provides a remarkable example of intergranular attack. The Al-Ga equilibrium phase diagram reveals no intermetallic compounds and very limited mutual solubilities, which implies that interactions between Al and Ga should be minimal. Yet when liquid Ga wets the surface of an unstressed Al specimen, the Ga will penetrate the Al grain boundaries, replacing each boundary with a liquid layer. The driving force is generally considered to be the reduction in energy when a grain boundary is replaced by two Ga-Al interfaces. Once an Al sample has been penetrated by Ga, it fails at almost no load. In this dissertation, in-situ Transmission Electron Microscope (TEM) studies are presented that elucidate the physical nature of the Ga penetration front. Although many of the TEM specimens were bicrystals, all but one of the grain boundaries studied were "general" boundaries; that is, they were low symmetry boundaries with high-index rotation axes, and no low-index planes common to both grains. Since the atomic structure of these grain boundaries cannot be resolved experimentally, atomistic computer models were constructed to assist in interpreting TEM results. TEM observations indicated that the penetration front is a line defect, possessing a stress field that interacts with lattice dislocations. The penetration front was also observed to interact with structural variations within the grain boundary. Interactions with lattice dislocations were used to estimate the penetration front thickness. Penetration speeds were not found to be determined by grain boundary energy or grain boundary excess volume. Penetration speeds were, however, found to depend qualitatively on the presence of penetration barriers in the grain boundary.

  11. Dislocation structures and electrical conduction properties of low angle tilt grain boundaries in LiNbO3

    Science.gov (United States)

    Furushima, Yuho; Nakamura, Atsutomo; Tochigi, Eita; Ikuhara, Yuichi; Toyoura, Kazuaki; Matsunaga, Katsuyuki

    2016-10-01

    Dislocations in crystalline materials constitute unique, atomic-scale, one-dimensional structure and have a potential to induce peculiar physical properties that are not found in the bulk. In this study, we fabricated LiNbO3 bicrystals with low angle tilt grain boundaries and investigated the relationship between the atomic structure of the boundary dislocations and their electrical conduction properties. Observations by using transmission electron microscopy revealed that dislocation structures at the (0001) low angle tilt grain boundaries depend on the tilt angle of the boundaries. Specifically, the characteristic dislocation structures with a large Burgers vector were formed in the boundary with the tilt angle of 2°. It is noteworthy that only the grain boundary of 2° exhibits distinct electrical conductivity after reduction treatment, although LiNbO3 is originally insulating. This unique electrical conductivity is suggested to be due to the characteristic dislocation structures with a large Burgers vector.

  12. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  13. Evolution of the sapphire industry: Rubicon Technology and Gavish

    Science.gov (United States)

    Harris, Daniel C.

    2009-05-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

  14. Scaling STI's sapphire cryocooler for applications requiring higher heat loads

    Science.gov (United States)

    Karandikar, Abhijit; Fiedler, Andreas

    2012-06-01

    Superconductor Technologies Inc. (STI) developed the Sapphire cryocooler specifically for the SuperLink® product; a high performance superconducting Radio Frequency (RF) front-end receiver used by wireless carriers such as Verizon Wireless and AT&T to improve network cell coverage and data speeds. STI has built and deployed over 6,000 systems operating 24 hours a day (24/7), 7 days a week in the field since 1999. Sapphire is an integrated free piston Stirling cycle cryocooler with a cooling capacity of 5 Watts at 77 Kelvin (K) with less than 100 Watts (W) input power. It has a field-proven Mean Time Between Failure (MTBF) of well over 1 million hours, requires zero maintenance and has logged over 250 million cumulative runtime hours. The Sapphire cooler is built on a scalable technology platform, enabling the design of machines with cooling capacities greater than 1 kilowatt (kW). This scalable platform also extends the same outstanding attributes as the Sapphire cooler, namely high reliability, zero maintenance, and compact size - all at a competitive cost. This paper will discuss emerging applications requiring higher heat loads and these attributes, describe Sapphire, and show a preliminary concept of a scaled machine with a 100 W cooling capacity.

  15. Study of the defects in GaN epitaxial films grown on sapphire by HVPE

    Science.gov (United States)

    Liu, Zhanhui; Xiu, Xiangqian; Chen, Lin; Zhang, Rong; Xie, Zili; Han, Ping; Shi, Yi; Gu, Shulin; Zheng, Youdou

    2008-02-01

    In this paper, the defects in hexagonal GaN epitaxial layers grown on (0001) sapphire (Al IIO 3) substrates by HVPE with a horizontal tube reactor had been studied. The GaN epitaxial layers were etched by means of defect-selective etching (Orthodox etching in molten KOH). The samples were characterized by Scanning Electron Microscopy (SEM) and Cathodoluminescence spectra (CL). From surface morphology and cross-sectional images, the defects could be divided into various types: cracks, low angle grain boundary (LAGB), nano-pipes and dislocations. These different defects were discussed. The cracks were proposed as related to the strain. And the strain could not only come from the lattice mismatch and thermal mismatch between sapphire and GaN layer in their interface, but also from the HVPE growth process. It was found that these screw, mixed and edge type dislocations formed small hexagonal pits after etching. Some pits would be observed in the area near LAGB. Additionally, by CL mapping technique, some non-radiative recombination centers without surface terminations could be probed optically.

  16. Voltage-Controlled Sapphire Oscillator: Design, Development, and Preliminary Performance

    Science.gov (United States)

    Wang, R. T.; Dick, G. J.; Tjoelker, R. L.

    2007-08-01

    We present the design for a new short-term frequency standard, the voltage-controlled sapphire oscillator, as a practical and lower-cost alternative to a cryogenic sapphire oscillator operating at liquid helium temperatures. Performance goals are a frequency stability of 1 x 10^-14 (1 second equal to or less than tau equal to or less than 100 seconds), more than 2 years of continuous operation, and practical operability. Key elements include the sapphire resonator, low-power and long-life cryocooler, frequency compensation method, and cryo-Pound design. We report the design verification, experimental results, and test results of the cryocooler environmental sensitivity, as well as a preliminary stability measurement.

  17. Clinical Application of the Sapphire Unfolder Lens Injection System

    Institute of Scientific and Technical Information of China (English)

    Weiai Guo; Danying Zheng; Zhenyu Li; Yiyong Qian; Zhenping Zhang

    2002-01-01

    Purpose: To summarize the clinical experience of 300 cases using the Sapphire unfloder intraocular lens (IOL) injection system.Methods: After the standard phacoemulsification, an AR40e IOL was implanted using the Sapphire Unfolder. The involved problems during and after the operation were observed and analyzed.Results:The complications occurred during the operation including the crack at the haptic-optic junction in 2 cases, slight kink in the haptic in 5 cases, IOL clamp into the cartridge in 2 cases, posterior capsular rupture in 2 cases and endothelium damage in the central small area in 4 cases. All the patients recovered successfully with IOLs in good position.Conclusion: IOL implantation with the Sapphire Unfolder led to no serious complications and got the satisfactory results.

  18. Blocks and residual stresses in shaped sapphire single crystals

    Science.gov (United States)

    Krymov, V. M.; Nosov, Yu. G.; Bakholdin, S. I.; Maslov, V. N.; Shul‧pina, I. L.; Nikolaev, V. I.

    2017-01-01

    The formation of blocks and residual stresses in shaped sapphire crystals grown from the melt by the Stepanov method (EFG) has been studied. The probability of block formation is higher for the growth along the c axis compared to that grown in the a-axis direction. The distribution of residual stress in sapphire crystals of tubular, rectangular and round cross section was measured by the conoscopy method. It was found that the magnitude of the residual stress increases from the center to the periphery of the crystal and reaches up to about 20 MPa. Residual stress tensor components for solid round rod and tubular single crystals were determined by numerical integration.

  19. Sea level characterization of a 1100 g sapphire bolometer

    CERN Document Server

    Pécourt, S; Bobin, C; Coron, N; Jesus, M D; Hadjout, J P; Leblanc, J W; Marcillac, P D

    1999-01-01

    A first characterization of a 1100 g sapphire bolometer, performed at sea level and at a working temperature of 40 mK, is presented. Despite perturbations coming from the high-radioactive background and cosmic rays, calibration spectra could be achieved with an internal alpha source and a sup 5 sup 7 Co gamma-ray source: the experimental threshold is 25 keV, while the FWHM resolution is 17.4 keV for the 122 keV peak. Possible heat release effects are discussed, and a new limit of 9x10 sup - sup 1 sup 4 W/g is obtained for sapphire.

  20. Martensitic transformation of pure iron at a grain boundary: Atomistic evidence for a two-step Kurdjumov-Sachs-Pitsch pathway

    Science.gov (United States)

    Meiser, Jerome; Urbassek, Herbert M.

    2016-08-01

    Using classical molecular dynamics simulations and the Meyer-Entel interaction potential, we study the martensitic transformation pathway in a pure iron bi-crystal containing a symmetric tilt grain boundary. Upon cooling the system from the austenitic phase, the transformation starts with the nucleation of the martensitic phase near the grain boundary in a plate-like arrangement. The Kurdjumov-Sachs orientation relations are fulfilled at the plates. During further cooling, the plates expand and merge. In contrast to the orientation relation in the plate structure, the complete transformation proceeds via the Pitsch pathway.

  1. Partial dislocation configurations in a low-angle boundary in {alpha}-Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Tochigi, E. [Department of Materials Science, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Shibata, N. [Institute of Engineering Innovation, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); PRESTO, JST, 4-1-8, Honcho Kawaguchi, Saitama 332-0012 (Japan); Nakamura, A. [Department of Intelligent Materials Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshiku, Osaka 558-8585 (Japan); Yamamoto, T. [Institute of Engineering Innovation, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Ikuhara, Y. [Institute of Engineering Innovation, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)], E-mail: ikuhara@sigma.t.u-tokyo.ac.jp

    2008-05-15

    The dislocation structures of a low-angle tilt grain boundary in alumina bicrystal were investigated by transmission electron microscopy. The grain boundary was found to consist of two regions: an area with pairs of partial dislocations and an area with groups of odd numbered partial dislocations (multiple-partial-structure). Eight kinds of multiple-partial-structures were found in the fabricated grain boundary. The Burgers vectors of each partial dislocation in the grain boundary can be distinguished by dark-field imaging, and thus the arrangement of partial dislocations in the multiple-partial-structures are determined. It is concluded that a slight twist component of the boundary is the origin of the characteristic multiple-partial-structures.

  2. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    Directory of Open Access Journals (Sweden)

    Sung Bo Lee

    2015-07-01

    Full Text Available In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al2O3 with the substitution of Si for Al.

  3. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison t

  4. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  5. Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

    Science.gov (United States)

    Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

    2016-03-01

    High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

  6. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials

    Science.gov (United States)

    2005-08-24

    the Cr in sapphire could also permit the construction of white light LEDs . Ultimately, an integrated III-V Nitride optical pump for Ti:Sapphire could...substrates by MOCVD. 2. Characterization of doped sapphire/ InGaN structures byPL to simulate electrical injection by laser or LED device structures Part 2 1...Cr:sapphire substrate. Solid line is the spectrum of blue and red light emitted by InGaN LED epitaxially grown on Cr:sapphire substrate. The light was collected

  7. Simulation of dc magnetic effects due to geometrically defined grain boundaries in type-II superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bartolome, E. [Escola Universitaria Salesiana de Sarria, Passeig Sant Joan Bosco, 74, 08017 Barcelona (Spain)], E-mail: ebartolome@euss.es; Granados, X.; Bozzo, B. [Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra (Spain); Navau, C. [Grup d' Electromagnetisme, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Puig, T.; Obradors, X. [Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra (Spain)

    2008-03-30

    A Bean model-based program ('Trazacorrientes') has been used to simulate the current distribution in the saturated remanent state of type-II superconducting bicrystal-like squared samples. The grain boundary was modeled by a set of periodically spaced holes geometrically defining the current transparency. Current simulations performed as a function of the boundary transparency, width and geometry are analyzed. Current distributions agree qualitatively with previously reported imaging measurements, while quantitative results can be obtained with an accuracy of {approx}5% due to present computing resolution limits. Thanks to 'Trazacorrientes' easy way of implementing irregular defects, meandering grain boundaries formed by straight facets of different local transparency could be simulated. The advantages and disadvantages of the program for the simulation of type-II superconductors with defects, among which GB's, are discussed.

  8. YBa2Cu3O7-δ long Josephson junctions on bicrystal Zr1-xYxO2 substrates fabricated by preliminary topology masks

    Science.gov (United States)

    Masterov, D. V.; Parafin, A. E.; Revin, L. S.; Chiginev, A. V.; Skorokhodov, E. V.; Yunin, P. A.; Pankratov, A. L.

    2017-02-01

    YBa2Cu3O{}7-δ (YBCO) films were fabricated by magnetron sputtering with modification of the substrate surface by preliminary topology masks. Formation features of Josephson junctions on bicrystal Zr1-xYxO2 (YSZ) substrates have been considered. The structural and electrical properties of such junctions were investigated. As a result, the presented technology allows us to fabricate YBCO structures on YSZ substrates with a buffer cerium dioxide (CeO2) layer where YBCO film sputtering is the final stage of structure formation. In particular, long Josephson junctions with good characteristics have been fabricated by this technology and measured, allowing us to achieve critical currents of 80 mA for 150 um junctions.

  9. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  10. Ti:sapphire laser with long-pulse lamp pumping

    Science.gov (United States)

    Koselja, Michael P.; Kubelka, Jiri; Kvapil, Jiri

    1992-06-01

    Lamp pumping of Ti:Sapphire has some advantages over laser pumping and represents some interest due to possible applications. The paper will present laser behavior of Ti:Sapphire under very long lamp pulse pumping. Pulse lamp duration (FWHM) was more than 100 times greater than the lifetime of Ti3+. Output energy with no tuning element was achieved greater than 1.5 J with 0.12% electrical-to-optical efficiency. Dimensions of the rod used was 7 mm in diameter and 148 mm in length. The doping level of Ti3+ was 0.09% Ti2O3 in the rod. Tuning characteristics with different tuning elements are also presented. Further development to obtain CW lamp pumping operation will be discussed.

  11. A GRASP for Next Generation Sapphire Image Acquisition Scheduling

    Directory of Open Access Journals (Sweden)

    Yang Wang

    2016-01-01

    Full Text Available This paper investigates an image acquisition scheduling problem for a Canadian surveillance-of-space satellite named Sapphire that takes images of deep space Earth-orbiting objects. For a set of resident space objects (RSOs that needs to be imaged within the time horizon of one day, the Sapphire image acquisition scheduling (SIAS problem is to find a schedule that maximizes the “Figure of Merit” of all the scheduled RSO images. To address the problem, we propose an effective GRASP heuristic that alternates between a randomized greedy constructive procedure and a local search procedure. Experimental comparisons with the currently used greedy algorithm are presented to demonstrate the merit of the proposed algorithm in handling the SIAS problem.

  12. AlN growth on sapphire substrate by ammonia MBE

    Science.gov (United States)

    Mansurov, V. G.; Nikitin, A. Yu.; Galitsyn, Yu. G.; Svitasheva, S. N.; Zhuravlev, K. S.; Osvath, Z.; Dobos, L.; Horvath, Z. E.; Pecz, B.

    2007-03-01

    Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are investigated. Surface morphology evolution during AlN growth is studied in situ by reflection high energy electron diffraction and ex situ by atomic force microscopy. It is found that the surfaces of AlN layers thicker than 100 nm have two major features: a quite smooth background and noticeable amount of hillocks. The influence of growth conditions on the AlN surface morphology is studied in order to find a way for reducing of the hillocks density. A modification of nitridated sapphire surface by small amount of Al (1-2 monolayers) with subsequent treatment of the surface under ammonia flux is proposed. An improvement of AlN surface morphology of the layers grown on the modified surfaces is demonstrated.

  13. Measurements of prompt radiation induced conductivity of alumina and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Hartman, E. Frederick [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Zarick, Thomas Andrew [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sheridan, Timothy J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Preston, Eric F. [ITT Coporation, Colorado Springs, CO (United States)

    2011-04-01

    We performed measurements of the prompt radiation induced conductivity in thin samples of Alumina and Sapphire at the Little Mountain Medusa LINAC facility in Ogden, UT. Five mil thick samples were irradiated with pulses of 20 MeV electrons, yielding dose rates of 1E7 to 1E9 rad/s. We applied variable potentials up to 1 kV across the samples and measured the prompt conduction current. Analysis rendered prompt conductivity coefficients between 1E10 and 1E9 mho/m/(rad/s), depending on the dose rate and the pulse width for Alumina and 1E7 to 6E7 mho/m/(rad/s) for Sapphire.

  14. Color Enhancement by Diffusion of Beryllium in Dark Blue Sapphire

    Institute of Scientific and Technical Information of China (English)

    Kyungj in Kim; Yongkil Ahn

    2016-01-01

    Diffusion of beryllium was performed on dark blue sapphire from China and Australia.The samples were heated with beryllium as a dopant in a furnace at 1 600 ℃ for 42 h in air.After beryllium diffusion,sam-ples were analyzed by UV-Vis,FTIR,and WD-XRF spectroscopy.After heat-treatment with Be as a catalyst, the irons of the ferrous state were changed to the ferric state.Therefore,reaction of Fe2+/Ti4+ IVCT was de-creased.The absorption peaks at 3 309 cm-1 attributed to OH radical were disappeared completely due to carry out heat treatment.Consequently,the intensity of absorption band was decreased in the visible region.Espe-cially,decreased absorption band in the vicinity of 570 nm was responsible for the lighter blue color.There-fore,we confirmed that the dark blue sapphires from China and Australia were changed to vivid blue.

  15. Ordered gold nanostructures on sapphire surfaces: Fabrication and optical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Konovko, A. A. [Moscow State University (Russian Federation); Smirnov, I. S. [Moscow State University of Electronics and Mathematics (Russian Federation); Roshchin, B. S.; Volkov, Yu. O. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Angelutz, A. A.; Andreev, A. V.; Shkurinov, A. P. [Moscow State University (Russian Federation); Kanevskii, V. M.; Asadchikov, V. E. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The possibilities of obtaining ordered gold nanoarrays on sapphire surfaces with oriented nanorelief are demonstrated. The structures are morphologically described using atomic force microscopy data. A study of the angular dependence of the reflectivity in the visible range of electromagnetic waves has revealed some features which are likely to indicate surface plasmon-polariton excitation at the air-gold interface under exposure to p-polarized radiation. The experimental results are found to be in good agreement with the theoretical calculations.

  16. Route to 100 TW Ti: Sapphire laser at repetitive mode

    Directory of Open Access Journals (Sweden)

    Teng Hao

    2013-11-01

    Full Text Available We demonstrated a 100 TW-class femtosecond Ti: sapphire laser running at repetition rate of 0.1 Hz by adding a stage amplifier in the 20 TW/10 Hz laser facility (XL-II. Pumping the new stage amplifier with the 25 J green Nd:glass laser, we successfully upgraded the laser energy to 3.4 J with duration of 29 fs, corresponding to a peak power of 117 TW.

  17. SINGLE-CRYSTAL SAPPHIRE OPTICAL FIBER SENSOR INSTRUMENTATION

    Energy Technology Data Exchange (ETDEWEB)

    A. Wang; G. Pickrell; R. May

    2002-09-10

    Accurate measurement of temperature is essential for the safe and efficient operation and control of a wide range of industrial processes. Appropriate techniques and instrumentation are needed depending on the temperature measurement requirements in different industrial processes and working environments. Harsh environments are common in many industrial applications. These harsh environments may involve extreme physical conditions, such as high-temperature, high-pressure, corrosive agents, toxicity, strong electromagnetic interference, and high-energy radiation exposure. Due to these severe environmental conditions, conventional temperature sensors are often difficult to apply. This situation has opened a new but challenging opportunity for the sensor society to provide robust, high-performance, and cost-effective temperature sensors capable of operating in those harsh environments. The focus of this research program has been to develop a temperature measurement system for temperature measurements in the primary and secondary stages of slagging gasifiers. For this application the temperature measurement system must be able to withstand the extremely harsh environment posed by the high temperatures and corrosive agents present in these systems. Real-time, accurate and reliable monitoring of temperature for the coal gasification process is important to realize the full economic potential of these gasification systems. Long life and stability of operation in the high temperature environment is essential for the temperature measurement system to ensure the continuous running of the coal gasification system over the long term. In this high temperature and chemically corrosive environment, rather limited high temperature measurement techniques such as high temperature thermocouples and optical/acoustic pyrometers are available, each with their own limitations. In this research program, five different temperature sensing schemes based on the single crystal sapphire

  18. Roles of grain boundaries in improving fracture toughness of ultrafine-grained metals

    Science.gov (United States)

    Shimokawa, T.; Tanaka, M.; Kinoshita, K.; Higashida, K.

    2011-06-01

    In order to improve the fracture toughness in ultrafine-grained metals, we investigate the interactions among crack tips, dislocations, and grain boundaries in aluminum bicrystal models containing a crack and tilt grain boundaries using molecular dynamics simulations. The results of previous computer simulations showed that grain refinement makes materials brittle if grain boundaries behave as obstacles to dislocation movement. However, it is actually well known that grain refinement increases fracture toughness of materials. Thus, the role of grain boundaries as dislocation sources should be essential to elucidate fracture phenomena in ultrafine-grained metals. A proposed mechanism to express the improved fracture toughness in ultrafine-grained metals is the disclination shielding effect on the crack tip mechanical field. Disclination shielding can be activated when two conditions are present. First, a transition of dislocation sources from crack tips to grain boundaries must occur. Second, the transformation of grain-boundary structure into a neighboring energetically stable boundary must occur as dislocations are emitted from the grain boundary. The disclination shielding effect becomes more pronounced as antishielding dislocations are continuously emitted from the grain boundary without dislocation emissions from crack tips, and then ultrafine-grained metals can sustain large plastic deformation without fracture with the drastic increase of the mobile dislocation density. Consequently, it can be expected that the disclination shielding effect can improve the fracture toughness in ultrafine-grained metals.

  19. Millimeter wave inducing subharmonic steps in the Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} thin film bicrystal Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X.; Hu, L.; Xie, W. [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Wang, P. [Beijing Institute of Radio Measurement, Beijing 100854 (China); Ma, L.J.; Zhao, X.J.; He, M. [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Zhang, X., E-mail: nkzhangxu@nankai.edu.cn [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Ji, L. [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China)

    2015-04-15

    Highlights: • We observed the subharmonic steps based on Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} (Tl-2212) film which epitaxial grown on bicrystal SrTiO{sub 3} (STO) substrate. • The simulation of the RCLSJ model matched up well with the experimental results. • The dI/dV–V curves highlight the subharmonic steps. - Abstract: The bicrystal Josephson junction (BJJ) was fabricated by patterning microbridge into Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} (Tl-2212) thin film grown epitaxially on the bicrystal SrTiO{sub 3} (STO) substrate. The millimeter wave responses of BJJ were researched by experiment and numerical simulation. Shapiro steps and subharmonic steps were both observed in the current–voltage (I–V) curve at the liquid nitrogen temperature. In the resistive–capacitive–inductive shunted junction (RCLSJ) model, both of the Shapiro steps and subharmonic steps were reproduced with varying capacitances and inductances. The result of simulation has a good agreement with the experiment. The relative large capacitance and inductance correspond to distinct subharmonic steps.

  20. Guidance to Design Grain Boundary Mobility Experiments with Molecular Dynamics and Phase-Field Modeling

    Energy Technology Data Exchange (ETDEWEB)

    Michael R Tonks; Yongfeng Zhang; S.B. Biner; Paul C Millett; Xianming Bai

    2013-02-01

    Quantitative phase-field modeling can play an important role in designing experiments to measure the grain boundary (GB) mobility. In this work, molecular dynamics (MD) simulation is employed to determine the GB mobility using Cu bicrystals. Two grain configurations are considered: a shrinking circular grain and a half loop grain. The results obtained from the half loop configuration approaches asymptotically to that obtained from the circular configuration with increasing half loop width. We then verify the phase- field model by directly comparing to the MD simulation results, obtaining excellent agreement. Next, this phase-field model is used to predict the behavior in a common experimental setup that utilizes a half loop grain configuration in a bicrystal to measure the GB mobility. With a 3D simulation, we identify the two critical times within the experiments to reach an accurate value of the GB mobility. We use a series of 2D simulations to investigate the impact of the notch angle on these two critical times and we identify an angle of 60? as an optimal value. We also show that if the notch does not have a sharp tip, it may immobilize the GB migration indefinitely.

  1. Variable-charge method applied to study coupled grain boundary migration in the presence of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Elsener, A. [Paul Scherrer Institute, Villigen, PSI-Villigen CH-5232 (Switzerland); Politano, O. [Institut Carnot de Bourgogne, UMR 5209 CNRS-Universite de Bourgogne, 9 Avenue Alain Savary, 21078 Dijon Cedex (France); Derlet, P.M. [Paul Scherrer Institute, Villigen, PSI-Villigen CH-5232 (Switzerland); Van Swygenhoven, H. [Paul Scherrer Institute, Villigen, PSI-Villigen CH-5232 (Switzerland)], E-mail: helena.vs@psi.ch

    2009-04-15

    One of the important differences between simulation and experiments in grain boundary (GB)-dominated metallic structures is the lack of impurities such as oxygen in computational samples. A modified variable-charge method [Elsener A, Politano O, Derlet PM, Van Swygenhoven H. Modell Simul Mater Sci Eng 2008;16:025006] based on the Streitz and Mintmire approach [Streitz FH, Mintmire JW. Phys Rev B 1994;50:11996] is used to study coupled GB motion in an Al bicrystal with a [1 1 2] symmetrical tilt GB in the presence of substitutional O, and compared with the stick-slip process identified by Cahn and Mishin [Cahn JW, Mishin Y, Suzuki A. Acta Mater 2006;54:4953]. It is found that the critical shear stress for migration of the GB increases linearly with the number of O atoms. These observations are then rationalized in terms of the internal stress signature of the O atoms in the vicinity of the boundary.

  2. Leveraging Python Interoperability Tools to Improve Sapphire's Usability

    Energy Technology Data Exchange (ETDEWEB)

    Gezahegne, A; Love, N S

    2007-12-10

    The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

  3. Ga/Mg ratio as a new geochemical tool to differentiate magmatic from metamorphic blue sapphires

    Science.gov (United States)

    Peucat, J. J.; Ruffault, P.; Fritsch, E.; Bouhnik-Le Coz, M.; Simonet, C.; Lasnier, B.

    2007-10-01

    Using ICP-MS-LA analyses, we demonstrate that the use of the Ga/Mg ratio, in conjunction with the Fe concentration, is an efficient tool in discriminating between "metamorphic" and "magmatic" blue sapphires. Magmatic blue sapphires found in alkali basalts (e.g. southeastern Asia, China, Africa) are commonly medium-rich to rich in Fe (with average contents between 2000 and 11000 ppm), high in Ga (> 140 ppm), and low in Mg (generally 10). Conversely, metamorphic blue sapphires found in basalts (e.g. Pailin pastel) and in metamorphic terrains (e.g. Mogok, Sri Lanka, Ilakaka) are characterized by low average iron contents ( 60 ppm) with low average Ga/Mg ratios (< 10). Basaltic magmatic sapphires have Fe, Ga and Mg contents similar to those obtained for primary magmatic sapphires found in the Garba Tula syenite. This suggests that these both sets of sapphires have a possible common "syenitic" origin, as previously proposed from other criteria. In addition, plumasite-related sapphires and metamorphic sapphires also exhibit similar composition in trace elements. Based on results from the present study, we suggest that fluid circulations during a metamorphic stage produced metasomatic exchanges between mafic and acidic rocks (plumasite model), thus explaining the high Mg contents and converging Ga/Mg ratios observed in metamorphic sapphires.

  4. Influence of Thermal Conductivity on Interface Shape during Growth of Sapphire Crystal Using a Heat-Exchanger-Method

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The internal radiative contributed on heat transfer will enhance the heat transport inside the crystalline phase during growth the transparent sapphire crystal using a heat-exchanger-method (HEM). The artificially enhanced thermal conductivity of the solid to include the internal radiation effect was used in the present study. Numerical simulations using FIDAP were performed to investigate the effects of the thermal conductivity on the shape of the melt-crystal interface, the temperature distribution, and the velocity distribution. Heat transfer (including radiation) from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. In the present study, we focus on the influence of the conductivity on the shape of the melt-crystal interface. Therefore, the effect of the others growth parameters during the HEM crystal growth was neglected. For the homogenous conductivity (km=kS=k), the maximum convexity decreases as k increases and the rate of maximum convexity increases for a higher conductivity is less abrupt than for a lower conductivity. For the no homogenous conductivity (km≠kS), the higher solid's kS generates lower maximum convexity and the variation in maximum convexity was less abrupt for the different melt's km. The maximum convexity decreases slightly as the enhance conductivity of the sapphire crystal increases. The effects of the anisotropic conductivity of the sapphire crystal were also addressed. The maximum convexity of the melt-crystal interface decreases when the radial conductivity (ksr) of the crystal increases. The maximum convexity increases as the axial conductivity (ksz) of the crucible increases.

  5. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  6. Detection of beryllium treatment of natural sapphires by NRA

    Science.gov (United States)

    Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.

    2010-06-01

    Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.

  7. Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Hsu, Hsiao-Chiu; Su, Yan-Kuin; Huang, Shyh-Jer; Wang, Yu-Jen; Wu, Chun-Ying; Chou, Ming-Chieh

    2010-04-01

    In this study, we had demonstrated the direct growth of nonpolar a-plane GaN on an r-plane sapphire by metal organic chemical vapor deposition (MOCVD) without any buffer layer. First, in this experiment, we had determined the optimum temperature for two-step growth, including obtaining three-dimensional (3D) GaN islands in the nucleation layer and coalescing with a further two-dimensional (2D) growth mode. The result shows that the nucleation layer grown under high temperature (1150 °C) leads to large islands with few grain boundaries. Under the same temperature, the effect of the V/III ratio on the growth of the overlaying GaN layer to obtain a flat and void free a-plane GaN layer is also studied. The result indicates one can directly grow a smooth epitaxial layer on an r-plane sapphire by changing the V/III ratio. The rms roughness decreases from 13.61 to 2.02 nm. The GaN crystal quality is verified using a mixed acid to etch the film surface. The etch pit density (EPD) is 3.16 ×107 cm-2.

  8. Thermal Control of a Dual Mode Parametric Sapphire Transducer

    CERN Document Server

    Belfi, Jacopo; De Michele, Andrea; Gabbriellini, Gianluca; Mango, Francesco; Passaquieti, Roberto

    2010-01-01

    We propose a method to control the thermal stability of a sapphire dielectric transducer made with two dielectric disks separated by a thin gap and resonating in the whispering gallery (WG) modes of the electromagnetic field. The simultaneous measurement of the frequencies of both a WGH mode and a WGE mode allows one to discriminate the frequency shifts due to gap variations from those due to temperature instability. A simple model, valid in quasi equilibrium conditions, describes the frequency shift of the two modes in terms of four tuning parameters. A procedure for the direct measurement of them is presented.

  9. Ultrafast, ultrahigh-peak power Ti:sapphire laser system

    Energy Technology Data Exchange (ETDEWEB)

    Yamakawa, Koichi; Aoyama, Makoto; Matsuoka, Shinichi; Akahane, Yutaka; Kase, Teiji; Nakano, Fumihiko; Sagisaka, Akito [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan)

    2001-01-01

    We review progress in the generation of multiterawatt optical pulses in the 10-fs range. We describe a design, performance and characterization of a Ti:sapphire laser system based on chirped-pulse amplification, which has produced a peak power in excess of 100-TW with sub-20-fs pulse durations and an average power of 19-W at a 10-Hz repetition rate. We also discuss extension of this system to the petawatt power level and potential applications in the relativistic, ultrahigh intensity regimes. (author)

  10. Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

    Science.gov (United States)

    Choi, Sang; King, Glen; Park, Yeonjoon

    2009-01-01

    SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

  11. Flashlamp pumped Ti-sapphire laser for ytterbium glass chirped pulse amplification

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Akihiko; Ohzu, Akira; Sugiyama, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    1998-03-01

    A flashlamp pumped Ti:sapphire laser is designed for ytterbium glass chirped pulse amplification. A high quality Ti:sapphire rod and a high energy long pulse discharging power supply are key components. The primary step is to produce the output power of 10 J per pulse at 920 nm. (author)

  12. Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide

    NARCIS (Netherlands)

    Crunteanu, A.; Jänchen, G.; Salathé, R.P.; Hoffmann, P.; Pollnau, M.; Eason, R.W.; Shepherd, D.P.

    2002-01-01

    We were successful in creating 1.4-µm high ribs in a Ti:sapphire planar waveguide by reactive ion etching. Optical investigations of the obtained structure showed channel-waveguide fluorescence emission of the Ti:sapphire layer after Ar-ion excitation.

  13. Fiber-laser-pumped Ti:sapphire laser

    CERN Document Server

    Samanta, G K; Devi, Kavita; Ebrahim-Zadeh, M

    2010-01-01

    We report the first experimental demonstration of efficient and high-power operation of a Ti:sapphire laser pumped by a simple, compact, continuous-wave (cw) fiber-laser-based green source. The pump radiation is obtained by direct single-pass second-harmonic-generation (SHG) of a 33-W, cw Yb-fiber laser in 30-mm-long MgO:sPPLT crystal, providing 11 W of single-frequency green power at 532 nm in TEM00 spatial profile with power and frequency stability better than 3.3% and 32 MHz, respectively, over one hour. The Ti:sapphire laser is continuously tunable across 743-970 nm and can deliver an output power up to 2.7 W with a slope efficiency as high as 32.8% under optimum output coupling of 20%. The laser output has a TEM00 spatial profile with M2<1.44 across the tuning range and exhibits a peak-to-peak power fluctuation below 5.1% over 1 hour.

  14. Temperature behavior of damage in sapphire implanted with light ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal)], E-mail: ealves@itn.pt; Marques, C. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal); Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, Carl J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10{sup 16}-1 x 10{sup 17} cm{sup -2}) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 deg. C and 1000 deg. C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10{sup 17} cm{sup -2}. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 deg. C and 1000 deg. C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  15. The effect of crystal orientation on the cryogenic strength of hydroxide catalysis bonded sapphire

    Science.gov (United States)

    Haughian, K.; Douglas, R.; van Veggel, A. A.; Hough, J.; Khalaidovski, A.; Rowan, S.; Suzuki, T.; Yamamoto, K.

    2015-04-01

    Hydroxide catalysis bonding has been used in gravitational wave detectors to precisely and securely join components of quasi-monolithic silica suspensions. Plans to operate future detectors at cryogenic temperatures has created the need for a change in the test mass and suspension material. Mono-crystalline sapphire is one candidate material for use at cryogenic temperatures and is being investigated for use in the KAGRA detector. The crystalline structure of sapphire may influence the properties of the hydroxide catalysis bond formed. Here, results are presented of studies of the potential influence of the crystal orientation of sapphire on the shear strength of the hydroxide catalysis bonds formed between sapphire samples. The strength was tested at approximately 8 K; this is the first measurement of the strength of such bonds between sapphire at such reduced temperatures. Our results suggest that all orientation combinations investigated produce bonds of sufficient strength for use in typical mirror suspension designs, with average strengths >23 MPa.

  16. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  17. High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Kazuo Uchida

    2012-12-01

    Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

  18. A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire

    Science.gov (United States)

    Ravadgar, P.; Horng, R. H.; Ou, S. L.

    2012-12-01

    A clear visualization of the origin and characteristics of threading dislocations (TDs) of GaN-based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried out. Special experimental set up and chemical etchant along with field emission scanning electron microscopy are employed to study the dynamics of GaN TDs at different growth stages. Cross-sectional transmission electron microscopy analysis visualized the formation of edge TDs is arising from extension of coalescences at boundaries of different tilting-twining nucleation grains "mosaic growth." Etch pits as representatives of edge TDs are in agreement with previous theoretical models and analyses of TDs core position and characteristics.

  19. High-temperature sapphire optical sensor fiber coatings

    Science.gov (United States)

    Desu, Seshu B.; Claus, Richard O.; Raheem, Ruby; Murphy, Kent A.

    1990-10-01

    the filter. These modes may be attributed to a number of material degradation mechanisms, such as thermal shock, oxidation corrosion of the material, mechanical loads, or phase changes in the filter material. Development of high temperature optical fiber (sapphire) sensors embedded in the CXF filters would be very valuable for both monitoring the integrity of the filter during its use and understanding the mechanisms of degradation such that durable filter development will be facilitated. Since the filter operating environment is very harsh, the high temperature sapphire optical fibers need to be protected and for some sensing techniques the fiber must also be coated with low refractive index film (cladding). The objective of the present study is to identify materials and develop process technologies for the application of claddings and protective coatings that are stable and compatible with sapphire fibers at both high temperatures and pressures.

  20. Twin Boundaries merely as Intrinsically Kinematic Barriers for Screw Dislocation Motion in FCC Metals

    Science.gov (United States)

    Zhang, Jiayong; Zhang, Hongwu; Ye, Hongfei; Zheng, Yonggang

    2016-03-01

    Metals with nanoscale twins have shown ultrahigh strength and excellent ductility, attributed to the role of twin boundaries (TBs) as strong barriers for the motion of lattice dislocations. Though observed in both experiments and simulations, the barrier effect of TBs is rarely studied quantitatively. Here, with atomistic simulations and continuum based anisotropic bicrystal models, we find that the long-range interaction force between coherent TBs and screw dislocations is negligible. Further simulations of the pileup behavior of screw dislocations in front of TBs suggest that screw dislocations can be blocked kinematically by TBs due to the change of slip plane, leading to the pileup of subsequent dislocations with the elastic repulsion actually from the pinned dislocation in front of the TB. Our results well explain the experimental observations that the variation of yield strength with twin thickness for ultrafine-grained copper follows the Hall-Petch relationship.

  1. Twin Boundaries merely as Intrinsically Kinematic Barriers for Screw Dislocation Motion in FCC Metals.

    Science.gov (United States)

    Zhang, Jiayong; Zhang, Hongwu; Ye, Hongfei; Zheng, Yonggang

    2016-03-10

    Metals with nanoscale twins have shown ultrahigh strength and excellent ductility, attributed to the role of twin boundaries (TBs) as strong barriers for the motion of lattice dislocations. Though observed in both experiments and simulations, the barrier effect of TBs is rarely studied quantitatively. Here, with atomistic simulations and continuum based anisotropic bicrystal models, we find that the long-range interaction force between coherent TBs and screw dislocations is negligible. Further simulations of the pileup behavior of screw dislocations in front of TBs suggest that screw dislocations can be blocked kinematically by TBs due to the change of slip plane, leading to the pileup of subsequent dislocations with the elastic repulsion actually from the pinned dislocation in front of the TB. Our results well explain the experimental observations that the variation of yield strength with twin thickness for ultrafine-grained copper follows the Hall-Petch relationship.

  2. Room Temperature Experiments with a Macroscopic Sapphire Mechanical Oscillator

    Science.gov (United States)

    Bourhill, Jeremy; Ivanov, Eugene; Tobar, Micahel

    2015-03-01

    We present initial results from a number of experiments conducted on a 0.53 kg sapphire ``dumbbell'' crystal. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects frequency modulate resonant microwave whispering gallery modes, simultaneously excited within the crystal. A novel microwave readout system is described allowing extremely low noise measurements of this frequency modulation with a phase noise floor of -160 dBc/Hz at 100 kHz, near our modes of interest. Fine-tuning of the crystal's suspension have allowed for the optimisation of mechanical Q-factors in preparation for cryogenic experiments, with a value of 8 x 107 achieved so far. Finally, results are presented that demonstrate the excitation of mechanical modes via radiation pressure force. These are all important steps towards the overall goal of the experiment; to cool a macroscopic device to the quantum ground state.

  3. Superexciplex of Coumarin Molecules using Tunable Ti-Sapphire Laser

    Science.gov (United States)

    Al-Ghamdi, Attieh Ali; Al-Dwayyan, Abdullah S.; Masilamani, Vadivel; Al-Saud, Turki Saud M.; Al-Salhi, Mohammed Saleh

    2003-10-01

    Certain highly polar dye molecules exhibit an additional optical gain band under pulsed laser excitation, while there is no such band under steady-state continuous wave (CW) lamp excitation. This new band is not due to an excimer, an exciplex or a two-photon fluorescence band but stems from the formation of a new molecular complex in which two excited molecules remain associated with a solvent molecule acting as a bridge. In this paper, the characteristics of superexciplexes of four related coumarin molecules are presented. All molecules were excited using a tunable Ti-sapphire laser pulse 10 ns in width. The distinct difference between the amplified spontaneous emission (ASE) spectra obtained with tunable laser and tunable lamp excitation demonstrated that twisted intramolecular charge transfer (TICT) conformations might also assist in the formation of these superexciplexes.

  4. The charge state of iron implanted into sapphire

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.; Sklad, P.S.; White, C.W.; Farlow, G.C.; Perez, A.; Kornilios, N.; Marest, G.

    1987-08-01

    Several techniques (RBS, TEM, CEMS) have been used to characterize sapphire single crystals implanted with iron at room temperature to fluences of 10/sup 16/ to 10/sup 17/ ions cm/sup -2/. At low fluences the as-implanted iron is found mainly in the ferrous state. As the fluence is increased, Fe/sup 3 +/ and metallic iron clusters became dominant. There is a strong correlation between the probability of finding specific configurations of iron ions within four cation coordination shells and the relative amounts of each charge state observed. The superparamagnetic behavior of the clusters suggest that they are of the order of 2 nm in size but the large amount of irradiation-induced damage and residual stress has prevented their imaging by TEM. 13 refs., 7 figs.

  5. Adapting a Cryogenic Sapphire Oscillator for Very Long Baseline Interferometry

    CERN Document Server

    Doeleman, Sheperd; Rogers, Alan; Hartnett, John; Tobar, Michael; Nand, Nitin; 10.1086/660156

    2011-01-01

    Extension of very long baseline interferometry (VLBI) to observing wavelengths shorter than 1.3mm provides exceptional angular resolution (~20 micro arcsec) and access to new spectral regimes for the study of astrophysical phenomena. To maintain phase coherence across a global VLBI array at these wavelengths requires that ultrastable frequency references be used for the heterodyne receivers at all participating telescopes. Hydrogen masers have traditionally been used as VLBI references, but atmospheric turbulence typically limits (sub) millimeter VLBI coherence times to ~1-30 s. Cryogenic Sapphire Oscillators (CSO) have better stability than Hydrogen masers on these time scale and are potential alternatives to masers as VLBI references. Here, We describe the design, implementation and tests of a system to produce a 10 MHz VLBI frequency standard from the microwave (11.2 GHz) output of a CSO. To improve long-term stability of the new reference, the CSO was locked to the timing signal from the Global Positionin...

  6. Analysis and modification of blue sapphires from Rwanda by ion beam techniques

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science - Gems & Jewelry, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Chaiwai, C.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanthanachaisaeng, B. [Gems Enhancement Research Unit, Faculty of Gems, Burapha University, Chanthaburi Campus, Chanthaburi 22170 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-12-15

    Highlights: • Ion beam analysis is an effective method for detecting trace elements. • Ion beam treatment is able to improve optical and color appearances of the blue sapphire from Rwanda. • These alternative methods can be extended to jewelry industry for large scale application. - Abstract: Blue sapphire is categorised in a corundum (Al{sub 2}O{sub 3}) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV–Vis–NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

  7. Large-scale inhomogeneity in sapphire test masses revealed by Rayleigh scattering imaging

    Science.gov (United States)

    Yan, Zewu; Ju, Li; Eon, François; Gras, Slawomir; Zhao, Chunnong; Jacob, John; Blair, David G.

    2004-03-01

    Rayleigh scattering in test masses can introduce noise and reduce the sensitivity of laser interferometric gravitational wave detectors. In this paper, we present laser Rayleigh scattering imaging as a technique to investigate sapphire test masses. The system provides three-dimensional Rayleigh scattering mapping of entire test masses and quantitative evaluation of the Rayleigh scattering coefficient. Rayleigh scattering mapping of two sapphire samples reveals point defects as well as inhomogeneous structures in the samples. We present results showing significant non-uniform scattering within two 4.5 kg sapphire test masses manufactured by the heat exchanger method.

  8. Growth of Al-doped ZnO films with tilted nano-columns on r-cut sapphire substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Hwan [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Lu, Tianlin; Cho, Sungmee; Khatkatay, Fauzia [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Chen, Li [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States)

    2012-12-01

    2 wt.% Al{sub 2}O{sub 3}-doped ZnO (AZO) thin films in both single layer and bi-layer forms were deposited on {alpha}-Al{sub 2}O{sub 3} (011{sup Macron }2) (r-cut) and (0001) (c-cut) substrates by a pulsed laser deposition technique. Single layer AZO films were grown under either vacuum or 33.3 Pa of O{sub 2} pressure. Bilayer AZO films were grown with a sequential deposition of a uniform template layer under vacuum and a nano-column-structured layer under 33.3 Pa of O{sub 2} pressure. Interestingly, single layer AZO film grown on r-cut sapphire in high oxygen pressure (33.3 Pa) shows tilted grain boundaries along [1{sup Macron }102{sup Macron }]{sub AZO}. The bilayer film deposited on r-cut substrate shows tilted nano-column growth while the film grown on c-cut substrate has vertically grown nano-columns. The results of X-ray diffraction and cross-section transmission electron microscopy studies show a systematic variation of the d-spacing of (0002){sub AZO} and (112{sup Macron }0){sub AZO} for all AZO films. Electrical resistivity was measured and found to be strongly dependent on the different microstructures achieved under different oxygen pressures and substrates. - Highlights: Black-Right-Pointing-Pointer 2 wt.% Al doped ZnO (AZO) thin film grown on r-cut sapphire under 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Tiled boundary along [1{sup Macron }102{sup Macron }]{sub AZO} observed as a result of internal lattice strain Black-Right-Pointing-Pointer Tilted nano-column processed after sequential deposition under vacuum and 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Significantly reduced electrical resistivity observed for the films on r-cut sapphire.

  9. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser....... However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy....

  10. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  12. Advances in Trace Element "Fingerprinting" of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    National Research Council Canada - National Science Library

    F Lin Sutherland; Khin Zaw; Sebastien Meffre; Tzen-Fui Yui; Kyaw Thu

    2015-01-01

    ... corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents...

  13. Domain pinning near a single-grain boundary in tetragonal and rhombohedral lead zirconate titanate films

    Science.gov (United States)

    Marincel, D. M.; Zhang, H. R.; Britson, J.; Belianinov, A.; Jesse, S.; Kalinin, S. V.; Chen, L. Q.; Rainforth, W. M.; Reaney, I. M.; Randall, C. A.; Trolier-McKinstry, S.

    2015-04-01

    The interaction of grain boundaries with ferroelectric domain walls strongly influences the extrinsic contribution to piezoelectric activity in Pb Zr1 -x,TixO3 (PZT), ubiquitous in modern transducers and actuators. However, the fundamental understanding of these phenomena has been limited by complex mechanisms originating from the interplay of atomic-level domain wall pinning, collective domain wall dynamics, and emergent mesoscopic behavior. This contribution utilizes engineered grain boundaries created by depositing epitaxial PZT films with various Zr:Ti ratios onto 24° tilt SrTi O3 bicrystals. The nonlinear piezoelectric response and surface domain structure across the boundary are investigated using piezoresponse force microscopy while the cross-sectional domain structure is studied using transmission electron microscopy. The grain boundary reduces domain wall motion over a width of 800 ±70 nm for PZT 45:55 and 450 ±30 nm for PZT 52:48. Phase field modeling provides an understanding of the elastic and electric fields associated with the grain boundary and local domain configurations. This study demonstrates that complex mesoscopic behaviors can be explored to complement atomic-level pictures of the material system.

  14. Newly designed multilayer thin film mirror for dispersion compensation in Ti: sapphire femtosecond lasers

    Institute of Scientific and Technical Information of China (English)

    Chunyan Liao; Jianda Shao; Jianbing Huang; Zhengxiu Fan; Hongbo He

    2005-01-01

    @@ There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

  15. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  16. Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis

    Science.gov (United States)

    Bletskan, D. I.; Bratus', V. Ya.; Luk'yanchuk, A. R.; Maslyuk, V. T.; Parlag, O. A.

    2008-07-01

    Sapphire (α-Al2O3) single crystals grown using the Verneuil and Kyropoulos methods have been analyzed using electron paramagnetic resonance and γ-ray spectroscopy with 12-MeV bremsstrahlung excitation. It is established that uncontrolled impurities in the final sapphire single crystals grown by the Kyropoulos method in molybdenum-tungsten crucibles are supplied both from the initial materials and from the furnace and crucible materials

  17. Jones calculus modeling and analysis of the thermal distortion in a Ti:sapphire laser amplifier.

    Science.gov (United States)

    Cho, Seryeyohan; Jeong, Jihoon; Yu, Tae Jun

    2016-06-27

    The mathematical modeling of an anisotropic Ti:sapphire crystal with a significant thermal load is performed. The model is expressed by the differential Jones matrix. A thermally induced distortion in the chirped-pulse amplification process is shown by the solution of the differential Jones matrix. Using this model, the thermally distorted spatio-temporal laser beam shape is calculated for a high-power and high-repetition-rate Ti:sapphire amplifier.

  18. High power all-solid-state quasi-continuous-wave tunable Ti: sapphire laser system

    Institute of Scientific and Technical Information of China (English)

    Lei Zou; Xin Ding; Yue Zou; Hongmei Ma; Wuqi Wen; Peng Wang; Jianquan Yao

    2005-01-01

    This paper reports a high power, all-solid-state, quasi-continuous-wave tunable Ti:sapphire laser system pumped by laser diode (LD) pumped frequency-doubled Nd:YAG laser. The maximum tuned output power of 4.2 W (797 nm) and tuned average power of 3.7 W were achieved when fixing the Ti:sapphire broadband output power at 5.0 W and applying 750-850 nm broadband coated mirror.

  19. Aleutian disease of mink: the antibody response of sapphire and pastel mink to Aleutian disease virus.

    Science.gov (United States)

    Bloom, M E; Race, R E; Hadlow, W J; Chesebro, B

    1975-10-01

    The specific antiviral antibody response of sapphire and pastel mink to Pullman strain of ADV has been examined. Sapphire mink inoculated with from 300,000-3 LD50 developed high levels of specific antibody and AD. Pastel mink inoculated with parallel doses of ADV also produced antibody but did not develop AD. The low incidence of AD in pastel mink inoculated with Pullman strain of ADV is probably related to factors other than antiviral antibody.

  20. Interface defects in GaN/sapphire studied using Rutherford backscattering spectroscopy and channeling

    Indian Academy of Sciences (India)

    S K Sinha; P K Barhai

    2004-06-01

    GaN on sapphire was grown by MOCVD technique. Rutherford backscattering spectra together with channeling along [0 0 0 1] axis were recorded to study the defects at the interface. Detailed calculation shows that the defects at GaN/sapphire interface are due to dislocations which are distributed into the whole thickness of the film and are mainly aligned on the growth direction.

  1. Supersmooth and modified surface of sapphire crystals: Formation, characterization, and applications in nanotechnologies

    Science.gov (United States)

    Muslimov, A. E.; Asadchikov, V. E.; Butashin, A. V.; Vlasov, V. P.; Deryabin, A. N.; Roshchin, B. S.; Sulyanov, S. N.; Kanevsky, V. M.

    2016-09-01

    The results of studying the state of the surface of sapphire crystals by a complex of methods in different stages of crystal treatment are considered by an example of preparing sapphire substrates with a supersmooth surface. The possibility of purposefully forming regular micro- and nanoreliefs and thin transition layers using thermal and thermochemical impacts are considered. The advantages of sapphire substrates with a modified surface for forming heteroepitaxial CdTe and ZnO semiconductor films and ordered ensembles of gold nanoparticles are described. The results of the experiments on the application of crystalline sapphire as a material for X-ray optical elements are reported. These elements include total external reflection mirrors and substrates for multilayer mirrors, output windows for synchrotron radiation, and monochromators working in the reflection geometry in X-ray spectrometers. In the latter case, the problems of the defect structure of bulk crystals sapphire and the choice of a method for growing sapphire crystals of the highest structural quality are considered.

  2. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Joucken, Frédéric, E-mail: frederic.joucken@unamur.be; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-15

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10{sup 12} cm{sup −2}) together with quite low carrier mobility (∼1350 cm{sup 2}/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  3. Cellular and humoral antibody responses of normal pastel and sapphire mink to goat erythrocytes.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J; Munoz, J J

    1971-02-01

    This study was undertaken to determine whether normal sapphire and royal pastel mink differ immunologically at the cellular and humoral levels. Two days after primary intraperitoneal (ip) inoculation of goat erythrocytes (GE), essentially no 19 or 7S plaque-forming cells (PFC) per 10(6) cells were detected in spleen or in abdominal and peripheral lymph nodes of either color phase. On the 4th day, more 19S PFC were detected in pastel than in sapphire tissues; pastel tissues also contained 7S PFC, whereas essentially none was present in sapphires until the 6th day. After an ip booster inoculation, the number of PFC was markedly different between the two color phases. These differences were most apparent in spleen and peripheral lymph nodes. In parallel with differences observed in PFC responses between the color phases, total hemolysin and 2-mercaptoethanol-resistant hemolysin titers of pastels exceeded those of sapphires in all but one interval after the primary, and at every interval after the booster, inoculation. These data indicate that sapphire mink are not immunological cripples, nor are they immunologically hyperactive, but that differences do exist between sapphire and royal pastel mink, especially in the response to booster injections of GE.

  4. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    Directory of Open Access Journals (Sweden)

    Teng Jiang

    2016-03-01

    Full Text Available The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  5. Laser surface and subsurface modification of sapphire using femtosecond pulses

    Energy Technology Data Exchange (ETDEWEB)

    Eberle, G., E-mail: eberle@iwf.mavt.ethz.ch [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Schmidt, M. [Chair of Photonic Technologies, University of Erlangen-Nuremberg, Konrad-Zuse-Strasse 3-5, 91052 Erlangen (Germany); Pude, F. [Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland); Wegener, K. [Institute of Machine Tools and Manufacturing, ETH Zurich, Leonhardstrasse 21, 8092 Zurich (Switzerland); Inspire AG, Technoparkstrasse 1, 8005 Zurich (Switzerland)

    2016-08-15

    Highlights: • Single and multipulse ablation threshold of aluminium oxide is determined. • Laser ablation, and in-volume modification followed by wet etching are demonstrated. • Quality following laser processing and laser-material interactions are studied. - Abstract: Two methods to process sapphire using femtosecond laser pulses are demonstrated, namely ablation (surface), and in-volume laser modification followed by wet etching (subsurface). Firstly, the single and multipulse ablation threshold is determined and compared with previous literature results. A unique application of ablation is demonstrated by modifying the entrance aperture of water jet orifices. Laser ablation exhibits advantages in terms of geometric flexibility and resolution, however, defects in the form of edge outbreaks and poor surface quality are evident. Secondly, the role of material transformation, polarisation state and formation of multi-focus structures after in-volume laser modification is investigated in order to explain their influence during the wet etching process. Laser scanning and electron microscopy as well as electron backscatter diffraction measurements supported by ion beam polishing are used to better understand quality and laser-material interactions of the two demonstrated methods of processing.

  6. Local dielectric permittivity profiles of sapphire/polypropylene interfaces

    Science.gov (United States)

    Yu, Liping; Ranjan, V.; Buongiorno Nardelli, M.; Bernholc, J.

    2009-03-01

    Recently, the need for high-power-density capacitors has stimulated research to develop composite dielectric materials with high-k nanoparticles embedded in a polymer matrix. In these materials, surfaces and interfaces may play an important role in determining the overall dielectric properties. We present first-principles investigations of the dielectric permittivity profiles across slabs and interfaces of sapphire(α-Al2O3)/isotactic-polypropylene(iPP). Our results indicate that the permittivity profile at interface strongly depends on the nanoscale averaging procedure. We propose an averaging model that ensures near-locality of the dielectric function. We find that: (i) the dielectric permittivity approaches the corresponding bulk value just a few atomic layers away from the interface or surface; (ii) the dielectric constant is enhanced at the surfaces of the isolated α-Al2O3 slabs, while no enhancement is observed at the iPP slab surfaces; and (iii) the dielectric transition at the αAl2O3/iPP is mainly confined in the αAl2O3 side.

  7. Q-Switching the Flash Ti: Sapphire Laser

    Energy Technology Data Exchange (ETDEWEB)

    Cone, Kelly

    2003-09-05

    The Stanford Linear Accelerator Center (SLAC) uses a flash lamp pumped Ti:Sapphire laser to generate the electron beam inside of the Linac. This laser system was installed at the SLAC Polarized Light Source in 1993. During the past, the system has been upgraded in several steps (eg. installation of Rhodium coated reflectors, cavity redesign, and remote controlled wavelength tunability). Q-switching the laser cavity to increase the peak pulse energy was successfully investigated and further improves the capabilities of the laser system for future polarized beam experiments. Two Pockels cells were used to perform the Q-switch and various diagnostics were used to characterize the modified laser pulse. The timing in relation to the laser trigger, pulse width, and pulse shape applied to the Q-switching Pockels cells (PC) were optimized. No damage to the laser cavity or optical elements occurred. At optimal conditions of Q-switching, the pulse energy of the laser increased from 0.4 mJ to over 3 mJ in a 300 ns pulse. The Q-switched pulse energy can be further increased by extending the hold-off pulse applied to the PC. The laser pulse produced by the Q-switch was long enough (full width half maximum (FWHM) > 200 ns) for pulse shaping and demonstrated good intensity stability (< 0.5% jitter). The increase in output power suggests that Q-switching will be used for future accelerator projects.

  8. Origin of Difference in Photocatalytic Activity of ZnO (002 Grown on a- and c-Face Sapphire

    Directory of Open Access Journals (Sweden)

    Guoqiang Li

    2014-01-01

    Full Text Available The oriented (002 ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002 ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.

  9. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  10. Shock Induced Emission from Sapphire in High-Pressure Phase of Rh2O3 (Ⅱ) Structure

    Institute of Scientific and Technical Information of China (English)

    ZHANG Dai-Yu; LIU Fu-Sheng; HAO Gao-Yu; SUN Yu-Huai

    2007-01-01

    @@ A distinct optical emission from the Rh2 O3 (Ⅱ) structural sapphire is observed under shock compression of 125,132, and 143 Gpa. The emission intensity continuously increases with the thickness of shocked sapphire. The colour temperature is determined to be about 4000K, which is obviously smaller than the reported value of the alpha phase alumina at the pressures below 80 Gpa. The present results suggest that the structural transformation will cause an obvious change of optical property in sapphire.

  11. Emerging boundaries

    DEFF Research Database (Denmark)

    Løvschal, Mette

    2014-01-01

    This article proposes a processual ontology for the emergence of man-made, linear boundaries across northwestern Europe, particularly in the first millennium BC. Over a significant period of time, these boundaries became new ways of organizing the landscape and settlements—a phenomenon that has...... of this phenomenon emerged along equivalent trajectories. At the same time, variation in the regional incorporation of these linear phenomena points toward situation-specific applications and independent development....

  12. Boundary Spanning

    DEFF Research Database (Denmark)

    Zølner, Mette

    The paper explores how locals span boundaries between corporate and local levels. The aim is to better comprehend potentialities and challenges when MNCs draws on locals’ culture specific knowledge. The study is based on an in-depth, interpretive case study of boundary spanning by local actors in...... approach with pattern matching is a way to shed light on the tacit local knowledge that organizational actors cannot articulate and that an exclusively inductive research is not likely to unveil....

  13. Simulations of thermal conductance across tilt grain boundaries in graphene

    Institute of Scientific and Technical Information of China (English)

    Peng Wang; Bo Gong; Qiong Feng; Hong-Tao Wang

    2012-01-01

    Non-equilibrium molecular dynamics (MD) method was performed to simulate the thermal transportation process in graphene nanoribbons (GNRs).A convenient way was conceived to introduce tilt grain boundaries (GBs) into the graphene lattice by repetitive removing C atom rows along certain directions.Comprehensive MD simulations reveal that larger-angle GBs are effective thermal barriers and substantially reduce the average thermal conductivity of GNRs.The GB thermal conductivity is ~ 10 W.m-1·K-1 for a bicrystal GNR with a misorientation of 21.8°,which is ~97% less than that of a prefect GNR with the same size.The total thermal resistance has a monotonic dependence on the density of the 5-7 defects along the GBs.A theoretical model is proposed to capture this relation and resolve the contributions by both the reduction in the phonon mean free path and the defect-induced thermal resistance.

  14. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  15. Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

    Science.gov (United States)

    Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-11-01

    ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

  16. Carbon nanotube assisted Lift off of GaN layers on sapphire

    Science.gov (United States)

    Long, Hao; Feng, Xiaohui; Wei, Yang; Yu, Tongjun; Fan, Shoushan; Ying, Leiying; Zhang, Baoping

    2017-02-01

    Laser lift off (LLO) was one of the most essential processes in fabrication of vertical GaN-based LEDs. However, traditional laser lift off of GaN on sapphire substrates needed high laser energy threshold, which deteriorated the GaN crystal. In this paper, it was found that inserting carbon nanotube between GaN and sapphire could effectively reduce the laser energy threshold in GaN LLO, from 1.5 J /cm2 of conventional GaN/sapphire to 1.3 J /cm2 of CNT inserted GaN/sapphire. The temperature distributions at the GaN/sapphire interfaces with and without CNTs were simulated by the finite elements calculation under laser irradiation. It was found that, due to the higher laser absorption coefficient of CNT, the CNT played as a powerful heating wire, sending out the thermal outside to elevate the GaN's temperature, and thus reduce the laser threshold for LLO. Raman and photoluminescence measurements indicated that residual stress of GaN membranes was as small as 0.3 GPa by the carbon nanotube assisted LLO. This work not only opens new application of CNTs, but also demonstrates the potential of high performance blue and green LEDs.

  17. Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; C.D. Beling; S. Fung

    2005-01-01

    @@ Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data,and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al+ ions, are also investigated. Studies on Al+ implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al+ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.

  18. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  19. Blurring Boundaries

    DEFF Research Database (Denmark)

    Neergaard, Ulla; Nielsen, Ruth

    2010-01-01

    ; and 3) Services of general interest. In the Blurring Boundaries project, three aspects of the European Social Model have been particularly highlighted: the constitutionalisation of the European Social Model, its multi-level legal character, and the clash between market access justice at EU level...... of welfare functions into EU law both from an internal market law and a constitutional law perspective. The main problem areas covered by the Blurring Boundaries project were studied in sub-projects on: 1) Internal market law and welfare services; 2) Fundamental rights and non-discrimination law aspects...... and distributive justice at national level....

  20. Blurring Boundaries

    DEFF Research Database (Denmark)

    Neergaard, Ulla; Nielsen, Ruth

    2010-01-01

    ; and 3) Services of general interest. In the Blurring Boundaries project, three aspects of the European Social Model have been particularly highlighted: the constitutionalisation of the European Social Model, its multi-level legal character, and the clash between market access justice at EU level...... of welfare functions into EU law both from an internal market law and a constitutional law perspective. The main problem areas covered by the Blurring Boundaries project were studied in sub-projects on: 1) Internal market law and welfare services; 2) Fundamental rights and non-discrimination law aspects...... and distributive justice at national level....

  1. Revelation of Causes of Colour Change in Beryllium-Treated Sapphires

    Institute of Scientific and Technical Information of China (English)

    Pichet Limsuwan; Siwaporn Meejoo; Asanee Somdee; Kheamrutai Thamaphat; Treedej Kittiauchawal; Atitaya Siripinyanond; Jurek Krzystck

    2008-01-01

    Blue sapphires are treated with Be in oxidizing atmosphere to change the blue colour into yellow. Untreated and Be-treated samples are examined using laser ablation inductively coupled-plasma-mass spectrometry (LA-ICP-MS), electron spin resonance (ESR) and ultraviolet-visible (UV-vis) spectroscopy. The results show that the yellow colouration in Be-heated blue sapphires is not due to Be diffusion from the surface of sapphire. Be behaves as a sole catalyst in this process. We find that the charge transfer between the ferrous (Fe2+) and ferric (Fe3+) is the reason of the colour change. The above conclusions are confirmed by ESR measurements to determine the connections between the Fe3+ ions before and after Be-treated heat treatments.

  2. Sapphire hard X-ray Fabry-Perot resonators for synchrotron experiments.

    Science.gov (United States)

    Tsai, Yi Wei; Wu, Yu Hsin; Chang, Ying Yi; Liu, Wen Chung; Liu, Hong Lin; Chu, Chia Hong; Chen, Pei Chi; Lin, Pao Te; Fu, Chien Chung; Chang, Shih Lin

    2016-05-01

    Hard X-ray Fabry-Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al2O3, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X-rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X-ray cavity resonance and measurements using scanning electron microscopic and X-ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions.

  3. High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

    Science.gov (United States)

    Barnes, A.; Pedrazzani, J.; May, R.; Murphy, K.; Tran, T.; Coate, J.

    1996-01-01

    In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

  4. Stability of trapped charges in sapphires and alumina ceramics: Evaluation by secondary electron emission

    Science.gov (United States)

    Zarbout, K.; Si Ahmed, A.; Moya, G.; Bernardini, J.; Goeuriot, D.; Kallel, A.

    2008-03-01

    The stability of trapped charges in sapphires and alumina ceramics is characterized via an experimental parameter expressing the variation of the secondary electron emission yield between two electron injections performed in a scanning electron microscope. Two types of sapphires and polycrystalline alumina, which differ mainly by their impurity content, are investigated in the temperature range 300-663K. The stable trapping behavior in sapphires is attributed to trapping in different defects, whose nature depends on the purity level. In alumina ceramics, the ability to trap charges in a stable way is stronger in samples of high impurity content. In the low impurity samples, stable trapping is promoted when the grain diameter decreases, whereas the reverse is observed in high impurity materials. These behaviors can stem from a gettering effect occurring during sintering. The strong dependence of the variation of the secondary electron emission yield on the grain diameter and impurities enables a scaling of the stable trapping ability of alumina materials.

  5. Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method

    Science.gov (United States)

    Ma, Wencheng; Zhao, Wenhan; Wu, Ming; Ding, Guoqiang; Liu, Lijun

    2017-09-01

    Transient numerical calculations were carried out to predict the evolutions of temperature and thermal stress in sapphire single crystal during the cooling process by heat exchanger method (HEM). Internal radiation in the semitransparent sapphire crystal was taken into account using the finite volume method (FVM) in the global heat transfer model. The numerical results seem to indicate that the narrow bottom region of the sapphire crystal is subjected to high thermal stress during the cooling process, which could be responsible for the seed cracking of the as-grown crystal, while the thermal stress is relatively small in the central main body of the crystal, and is less than 10 MPa during the whole cooling process. The fast decrease of the thermal stress in the bottom region of the crystal during the initial stage of cooling process is dominated by the reduction of the cooling helium gas in the heat exchanger shaft, and is not significantly affected by the heating power reduction rate.

  6. Rate of F center formation in sapphire under low-energy low-fluence Ar+ irradiation

    Science.gov (United States)

    Epie, E. N.; Wijesundera, D. N.; Tilakaratne, B. P.; Chen, Q. Y.; Chu, W. K.

    2016-03-01

    Ionoluminescence, optical absorption spectroscopy and Rutherford backscattering spectrometry channelling (RBS-C) have been used to study the rate of F center formation with fluence in 170 keV Ar+ irradiated single crystals of α-Al2O3 (sapphire) at room temperature. Implantation fluences range between 1013 cm-2 and 5 ×1014 cm-2. F center density (NF) has been found to display an initial rapid linear increase with Ar+ fluence followed by saturation to a maximum value of 1.74 ×1015 cm-2. Experimental results show a 1-1 correlation between radiation damage in the oxygen sublattice and F center density. This suggest F center kinetics in sapphire under low-energy low-fluence Ar irradiation is a direct consequence of dynamic competition between oxygen defect creation and recombination. An attempt has also been made to extend this discussion to F center kinetics in sapphire under swift heavy ion irradiation.

  7. The Deformation of Nial Bicrystals

    Science.gov (United States)

    1990-06-01

    vacancies is required for the extensive motion of these dislo.ations. It ib suggested that the climb of [100] and [0101 dislocations provides the required... vacancies , and that the gradient in the concentration of vacancies provides the driving force for the motion of these dislocations. The climb of...solid-state laser action (GaAs), excellent magnetic coercive force ( FePt ), and the anomalous dependence of yield stress on temperature (Ni3AI

  8. High-pressure sapphire cell for phase equilibria measurements of CO2/organic/water systems.

    Science.gov (United States)

    Pollet, Pamela; Ethier, Amy L; Senter, James C; Eckert, Charles A; Liotta, Charles L

    2014-01-24

    The high pressure sapphire cell apparatus was constructed to visually determine the composition of multiphase systems without physical sampling. Specifically, the sapphire cell enables visual data collection from multiple loadings to solve a set of material balances to precisely determine phase composition. Ternary phase diagrams can then be established to determine the proportion of each component in each phase at a given condition. In principle, any ternary system can be studied although ternary systems (gas-liquid-liquid) are the specific examples discussed herein. For instance, the ternary THF-Water-CO2 system was studied at 25 and 40 °C and is described herein. Of key importance, this technique does not require sampling. Circumventing the possible disturbance of the system equilibrium upon sampling, inherent measurement errors, and technical difficulties of physically sampling under pressure is a significant benefit of this technique. Perhaps as important, the sapphire cell also enables the direct visual observation of the phase behavior. In fact, as the CO2 pressure is increased, the homogeneous THF-Water solution phase splits at about 2 MPa. With this technique, it was possible to easily and clearly observe the cloud point and determine the composition of the newly formed phases as a function of pressure. The data acquired with the sapphire cell technique can be used for many applications. In our case, we measured swelling and composition for tunable solvents, like gas-expanded liquids, gas-expanded ionic liquids and Organic Aqueous Tunable Systems (OATS)(1-4). For the latest system, OATS, the high-pressure sapphire cell enabled the study of (1) phase behavior as a function of pressure and temperature, (2) composition of each phase (gas-liquid-liquid) as a function of pressure and temperature and (3) catalyst partitioning in the two liquid phases as a function of pressure and composition. Finally, the sapphire cell is an especially effective tool to gather

  9. Blurring Boundaries

    DEFF Research Database (Denmark)

    Neergaard, Ulla; Nielsen, Ruth

    2010-01-01

    This article builds on the results obtained in the so-called Blurring Boundaries project which was undertaken at the Law Department, Copenhagen Business School, in the period from 2007 to 2009. It looks at the sustainability of the Danish welfare state in an EU law context and on the integration ...

  10. Negotiating boundaries

    DEFF Research Database (Denmark)

    Aarhus, Rikke; Ballegaard, Stinne Aaløkke

    2010-01-01

    To move treatment successfully from the hospital to that of technology assisted self-care at home, it is vital in the design of such technologies to understand the setting in which the health IT should be used. Based on qualitative studies we find that people engage in elaborate boundary work to ...

  11. The Influence of Surface Anisotropy Crystalline Structure on Wetting of Sapphire by Molten Aluminum

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2013-05-01

    The wetting of sapphire by molten aluminum was investigated by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) at PO2 <10-15 Pa under Ar atmosphere. This study focuses on sapphire crystalline structure and its principle to the interface. The planes " a" and " b" are oxygen terminated structures and wet more by Al, whereas the " c" plane is an aluminum terminated structure. A wetting transition at 1273 K (1000 °C) was obtained and a solid surface tension proves the capillarity trends of the couple.

  12. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Science.gov (United States)

    Marques, C.; Franco, N.; Alves, L. C.; da Silva, R. C.; Alves, E.; Safran, G.; McHargue, C. J.

    2007-04-01

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  13. Tunable Sum Frequency Mixing of a Ti∶sapphire Laser and a Nd∶YAG Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; YAO Jianquan; YU Yizhong; YU Xuanyi; XU Jingjun; ZHANG Guangyin

    2001-01-01

    In this paper the theoretical and experimental results of sum-frequency mixing of a Ti∶sapphire laser and a 1.064 μm Nd∶YAG laser are presented. By using two KTP crystals cut at θ=76° and 85° (φ=90° in both crystals), respectively, the sum-frequency mixing tuning range from 459.3 to 509.6 nm in one Ti∶sapphire laser setup is experimentally achieved. The maximum output energy was 14.6 mJ and the energy conversion efficiency was up to 15.2%.

  14. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Energy Technology Data Exchange (ETDEWEB)

    Marques, C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Franco, N. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, L.C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Silva, R.C. da [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, E. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal)]. E-mail: ealves@itn.pt; Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, C.J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2007-04-15

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 x 10{sup 17} cm{sup -2} at room temperature, followed by annealing at 1000 deg. C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  15. Birefringence measurements in single crystal sapphire and calcite shocked along the a axis

    Science.gov (United States)

    Tear, Gareth R.; Chapman, David J.; Eakins, Daniel E.; Proud, William G.

    2017-01-01

    Calcite and sapphire were shock compressed along the direction (a axis) in a plate impact configuration. Polarimetery and Photonic Doppler Velocimetery (PDV) were used to measure the change in birefringence with particle velocity in the shock direction. Results for sapphire agree well with linear photoelastic theory and current literature showing a linear relationship between birefringence and particle velocity up to 310 m s-1. A maximum change in birefringence of 5% was observed. Calcite however showed anomolous behaviour with no detectable change in birefringence (less than 0.1%) over the range of particle velocities studied (up to 75 m s-1).

  16. Intracavity frequency doubling of CW Ti:Sapphire laser utilising BiBO nonlinear crystal

    DEFF Research Database (Denmark)

    Thorhauge, Morten; Mortensen, Jesper Liltorp; Tidemand-Lichtenberg, Peter

    Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm.......Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm....

  17. Behaviors of optical and chemical state of Nb+ implanted sapphire after annealing

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of the radiation damage of sapphire crystal, produced by implantation with 380 keV Nb+ ion followed by annealing in a series of steps from 500 to 1100℃C at reducing atmosphere, was investigated in optical absorption and XPS measurements. It is found that the implanted niobium in sapphire is in different local environments with different chemical states after the annealing. The changes in optical density (OD) from the bands, based on the well known F-type centers, show that the annealing behavior of the radiation damage may be divided into different stages due to different mechanisms.

  18. Measurement for titanium density distribution on Ti:sapphire rods for high intensity pump source

    Energy Technology Data Exchange (ETDEWEB)

    Usami, Tsutomu; Nishimura, Akihiko; Sugiyama, Akira [Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan). Kansai Research Establishment

    2001-10-01

    A Ti:sapphire rod of 190 mm length made by Czochralski (CZ) technique was used in the flashlamp pumped high intensity laser for Yb:glass chirped pulse amplification. In the absorption spectroscopy of the rod immersed in an index matching liquid of methylene iodide, heterogeneous Ti{sup 3+} density distribution was measured along the direction of length. It has been first clarified that the Ti:sapphire rod grown by the CZ technique has 20% difference of the Ti{sup 3+} density at the both ends. (author)

  19. Sapphire: Relation between luminescence of starting materials and luminescence of single crystals

    Science.gov (United States)

    Mogilevsky, R.; Nedilko, S.; Sharafutdinova, L.; Burlay, S.; Sherbatskii, V.; Boyko, V.; Mittl, S.

    2009-10-01

    A relation between photoluminescence (PL) characteristics of different starting materials used for crystal growth and un-doped sapphire single crystals manufactured using various methods of crystal growth (Kyropolus, HEM, Czochralski, and EFG) was found. The crystals grown using the Verneuil starting material exhibited significant PL when any method of crystal growth was used. On the contrary, sapphire samples grown by the same technologies wherein the starting material was EMT HPDA R revealed very low PL. (HPDA R is produced by EMT, Inc., with proprietary and patented technology.)

  20. The effect of strain on grains and grain boundaries in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Van der Laan, D C [Department of Physics, University of Colorado, Boulder, CO 80309 (United States); Haugan, T J; Barnes, P N [Air Force Research Laboratory, Wright-Patterson AFB, OH 45433 (United States); Abraimov, D; Kametani, F; Larbalestier, D C [National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310 (United States); Rupich, M W, E-mail: danko@boulder.nist.go [American Superconductor Corporation, Westborough, MA 01598 (United States)

    2010-01-15

    The role of grains and grain boundaries in producing reversible strain effects on the transport current critical current density (J{sub c}) of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) coated conductors that are produced with metal-organic deposition (MOD) was investigated. The strain ({epsilon}) dependence of J{sub c} for full-width coated conductors is compared with that for samples in which the current transport was limited to a few or single grain boundaries by cutting narrow tracks with a laser or focused ion beam, as well as with thin films deposited on bicrystalline SrTiO{sub 3} substrates by use of pulsed-laser deposition (PLD). Our results show that the dependences of J{sub c} on {epsilon} for the grains and for the grain boundaries from the two kinds of YBCO samples can be expressed by the same function, however with a greater effective tensile strain at the grain boundaries than in the grains. The really striking result is that the grain boundary strain is 5-10 times higher for grain boundaries of in situ PLD grown bicrystals as compared to the aperiodic, meandered, nonplanar grain boundaries that develop in ex situ grown MOD-YBCO in the coated conductor of this study.

  1. Changing Boundaries

    DEFF Research Database (Denmark)

    Brodkin, Evelyn; Larsen, Flemming

    2013-01-01

    In recent decades, workfare-style policies have become part of the institutional architecture of welfare and labor market arrangements around the world. In this article, we offer a comparative, historical view of workfare´s advance. Our analysis recognizes the complexity and diversity of what we...... call the “policies of workfare” and highlights the different paths through which these policies have developed in the U.S. and parts of Europe. We argue that it is necessary to look beyond familiar policy labels and language in order to consider workfare-style policies as part of a broader political...... project that is altering the boundary between the democratic welfare state and the market economy. We see workfare policies as boundary-changing with potentially profound implications both for individuals disadvantaged by market arrangements and for societies seeking to grapple with the increasing...

  2. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors...

  3. Fully-depleted silicon-on-sapphire and its application to advanced VLSI design

    Science.gov (United States)

    Offord, Bruce W.

    1992-01-01

    In addition to the widely recognized advantages of full dielectric isolation, e.g., reduced parasitic capacitance, transient radiation hardness, and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.

  4. Deep-ultraviolet frequency metrology with a narrowband titanium:sapphire laser

    NARCIS (Netherlands)

    Hannemann, S.

    2007-01-01

    Within the framework of this thesis resaerch project a narrow band titanium:sapphire laser was built. It provides nanosecond pulses that are subsequently upconverted to the deep ultraviolet frequency range. Absolute frequency calibration is achieved by linking the injection seeding light to a

  5. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  6. Laser-assisted microstructuring for Ti:sapphire channel-waveguide fabrication

    NARCIS (Netherlands)

    Crunteanu, A.; Pollnau, Markus; Jänchen, G.; Hibert, C.; Hoffmann, P.; Salathé, R.P.; Eason, R.W.; Shepherd, D.P.

    We report on the fabrication of Ti:sapphire channel waveguides. Such channel waveguides are of interest, e.g., as low-threshold tunable lasers. We investigated several structuring methods including ion beam implantation followed by wet chemical etching strip loading by polyimide spin coating and

  7. Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    WANG Gui-gen; ZHANG Ming-fu; ZUO Hong-bo; HE Xiao-dong; HAN Jie-cai

    2006-01-01

    The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.

  8. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  9. High-power solid-state sapphire whispering gallery mode maser.

    Science.gov (United States)

    Creedon, Daniel L; Benmessaï, Karim; Tobar, Michael E; Hartnett, John G; Bourgeois, Pierre-Yves; Kersale, Yann; Le Floch, Jean-Michel; Giordano, Vincent

    2010-03-01

    We present new results on a cryogenic solid-state maser frequency standard, which relies on the excitation of whispering gallery (WG) modes within a doped monocrystalline sapphire resonator (alpha-Al2O3). Included substitutively within the highest purity HEMEX-grade sapphire crystal lattice are Fe2+ impurities at a concentration of parts per million, an unavoidable result of the manufacturing process. Mass conversion of Fe2+ to Fe3+ ions was achieved by thermally annealing the sapphire in air. Above-threshold maser oscillation was then excited in the resonator at zero applied DC magnetic field by pumping high-Q WG modes coincident in frequency with the electron spin resonance (ESR) energy levels of the Fe3+ spin population. A 2 stage annealing process was undertaken for a sapphire resonator with exceptionally low Fe3+ concentration, resulting in an improvement of 6 orders of magnitude in output power for this particular crystal, and exceeding the previous best implementation of our scheme in another crystal by nearly 20 dB. This represents an output signal 7 orders of magnitude more powerful than a typical commercial hydrogen maser. At this power level, we estimate a limit on the frequency stability of order 1 x 10(-17)/square root(tau) due to the Schawlow-Townes fundamental thermal noise limit.

  10. Multiphoton imaging with a novel compact diode-pumped Ti:sapphire oscillator

    DEFF Research Database (Denmark)

    König, Karsten; Andersen, Peter E.; Le, Tuan;

    2015-01-01

    Multiphoton laser scanning microscopy commonly relies on bulky and expensive femtosecond lasers. We integrated a novel minimal-footprint Ti:sapphire oscillator, pumped by a frequency-doubled distributed Bragg reflector tapered diode laser, into a clinical multiphoton tomograph and evaluated its...

  11. New sapphire and ruby components and their manufacture using diamond abrasives

    Science.gov (United States)

    Sauser, D.

    The properties of synthetic aluminum oxides (sapphire and ruby) and their applications in watchmaking (watch bearings and watchglasses) and as hard-wearing components such as centering devices for optical fibres and water jet nozzles for material cutting are discussed. Examples are given of the use of diamonds tools for machining such components, including sawing, drilling, grinding and polishing operations.

  12. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  13. "You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

    Science.gov (United States)

    Pappas, Christine

    2007-01-01

    Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

  14. Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center (SAPMAC) method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.

  15. A century of sapphire crystal growth: origin of the EFG method

    Science.gov (United States)

    Harris, Daniel C.

    2009-08-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Edge-Defined Film-Fed Growth (EFG) was invented by H. Labelle in the 1960s and the Heat Exchanger Method (HEM) was invented by F. Schmid and D. Viechnicki in 1967. Both methods were commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) was invented by Kh. S. Bagdasorov in the Soviet Union in the 1960s. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s. Today, half of the world's sapphire is produced by the GOI method.

  16. Discovering the Role of Grain Boundary Complexions in Materials

    Energy Technology Data Exchange (ETDEWEB)

    Harmer, Martin P. [Lehigh Univ., Bethlehem, PA (United States)

    2015-03-19

    in a range of materials systems, and to characterize their structures, range of stability and selected physical properties. First, an Au-based bilayer interfacial phase was discovered at a bicrystal boundary in the Si-Au system. This bilayer transitioned abruptly to an intrinsic (“clean”) grain boundary phase, suggesting first-order phase behavior. This study represents the discovery of grain boundary complexions in a completely new system, i.e., a semiconductor-metal system, giving further support to the expectation that grain boundary complexions are a general phenomenon not limited to any particular class of materials. The TiO2-CuO system exhibited four grain boundary interfacial phases: a monolayer, disordered bilayer, disordered trilayer, and non-wetting nanoscale amorphous drop (which likely resulted from dewetting of a nanoscale IGF). SiO2 contamination was discovered in the TiO2-CuO samples, and we hypothesize that this impurity may have caused an “order-disorder” transition to occur. In other words, we expect that pure TiO2-CuO may have a higher tendency to exhibit ordered bilayer and trilayer complexions, which may also exhibit a well-defined order-disorder transition temperature. In this effort we have also identified unique complexion transitions in yttria and strontium titanate.

  17. Boundary issues

    Science.gov (United States)

    Townsend, Alan R.; Porder, Stephen

    2011-03-01

    What is our point of no return? Caesar proclaimed 'the die is cast' while crossing the Rubicon, but rarely does modern society find so visible a threshold in our continued degradation of ecosystems and the services they provide. Humans have always used their surroundings to make a living— sometimes successfully, sometimes not (Diamond 2005)—and we intuitively know that there are boundaries to our exploitation. But defining these boundaries has been a challenge since Malthus first prophesied that nature would limit the human population (Malthus 1798). In 2009, Rockström and colleagues tried to quantify what the 6.8 billion (and counting) of us could continue to get away with, and what we couldn't (Rockström et al 2009). In selecting ten 'planetary boundaries', the authors contend that a sustainable human enterprise requires treating a number of environmental thresholds as points of no return. They suggest we breach these Rubicons at our own peril, and that we've already crossed three: biodiversity loss, atmospheric CO2, and disruption of the global nitrogen (N) cycle. As they clearly hoped, the very act of setting targets has provoked scientific inquiry about their accuracy, and about the value of hard targets in the first place (Schlesinger 2009). Such debate is a good thing. Despite recent emphasis on the science of human-ecosystem interactions, understanding of our planetary boundaries is still in its infancy, and controversy can speed scientific progress (Engelhardt and Caplan 1987). A few weeks ago in this journal, Carpenter and Bennett (2011) took aim at one of the more controversial boundaries in the Rockström analysis: that for human alteration of the global phosphorus (P) cycle. Rockström's group chose riverine P export as the key indicator, suggesting that humans should not exceed a value that could trigger widespread marine anoxic events—and asserting that we have not yet crossed this threshold. There are defensible reasons for a marine

  18. boundary dissipation

    Directory of Open Access Journals (Sweden)

    Mehmet Camurdan

    1998-01-01

    are coupled by appropriate trace operators. This overall model differs from those previously studied in the literature in that the elastic chamber floor is here more realistically modeled by a hyperbolic Kirchoff equation, rather than by a parabolic Euler-Bernoulli equation with Kelvin-Voight structural damping, as in past literature. Thus, the hyperbolic/parabolic coupled system of past literature is replaced here by a hyperbolic/hyperbolic coupled model. The main result of this paper is a uniform stabilization of the coupled PDE system by a (physically appealing boundary dissipation.

  19. YBa{sub 2}Cu{sub 3}O{sub 7} grain boundary junction dc SQUIDs for operation in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Konovalenko, Konstantin; Nagel, Joachim; Turad, Markus; Bailer, Matthias; Gruenzweig, Matthias; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut, Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany)

    2009-07-01

    We investigate the suitability of dc SQUIDs for operation in high magnetic fields at 4.2 K. For this purpose, we fabricated small (micron-sized) YBa{sub 2}Cu{sub 3}O{sub 7}(YBCO) grain boundary junction dc SQUIDs on SrTiO{sub 3} bicrystals with thin film Au shunt resistors. Fabrication was done by pulsed laser deposition of YBCO films, in-situ deposition of electron-beam evaporated Au films and Ar ion milling with photolithographically defined masks. For the fabricated SQUIDs we present results on electric transport properties, measured in a four-point arrangement, and on noise properties, measured with a Nb dc SQUID amplifier.

  20. Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

    Science.gov (United States)

    Lee, Jae-Hoon; Oh, Jeong-Tak; Park, Jin-Sub; Kim, Je-Won; Kim, Yong-Chun; Lee, Jeong-Wook; Cho, Hyung-Koun

    2006-06-01

    To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density.

  1. Achieving strong doubling power by optical phase-locked Ti:sapphire laser and MOPA system

    Institute of Scientific and Technical Information of China (English)

    Yu Peng; Baike Lin; Qiang Wang; Yang Zhao; Ye Li; Jianping Cao; Zhanjun Fang; Erjun Zang

    2012-01-01

    We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal,whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods.The outputs of second-harmonic generation reach 310 mW,54.8% of the conversion efficiency from the Ti;sapphire laser with the crystal length of 10 mm,and 208 mW,59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm.It consists of heterodyning the Ti;sapphire laser and the MOPA system,and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator.The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti;sapphire laser to lock the two lasers in phase.A stable blue power of 520 mW is obtained,which supplies enough power for the cooling and trapping step of the strontium (Sr) optical lattice clock.Four stable isotopes of Sr,84Sr,86Sr,87Sr,and 88Sr,are detected by probing the laser during a strong 460.7-nm cycling transition (5s21S0-5s5p1P1).%We show two external cavity-enhanced second-harmonic generations of 922 nm with periodically poled potassium titanyl phosphate crystal, whose doubling cavities are locked separately with Hansch-Couillaud and intra-modulation methods. The outputs of second-harmonic generation reach 310 mW, 54.8% of the conversion efficiency from the Ti:sapphire laser with the crystal length of 10 mm, and 208 mW, 59% of the conversion efficiency from the MOPA system with the crystal length of 30 mm. It consists of heterodyning the Ti:sapphire laser and the MOPA system, and compares the phase of the beat frequency signal with the phase of a reference RF local oscillator. The resulting phase error is used as a feedback signal and fed back to the reference cavity of the Ti:sapphire laser to lock the two lasers in phase. A stable blue power of 520 mW is obtained, which supplies enough power for the cooling

  2. Atomistic studies of grain boundaries and heterophase interfaces in alloys and compounds. Final report, July 1987-August 1998

    Energy Technology Data Exchange (ETDEWEB)

    Vitek, Vaclav

    1998-08-01

    The overarching goal of the research supported by this grant was investigation of the structure and properties of interfaces in multicomponent systems by atomistic modeling. Initially, the research was devoted to studies of segregation to grain boundaries in binary disordered alloys. The next step was then studies of the structure and properties of grain boundaries in ordered compounds, specifically Ni3Al and NiAl, and grain boundary segregation in these compounds in the case of off-stoichiometry. Finally, the structure of Nb/sapphire interfaces, in particular the core configurations of the misfit dislocations, was studied.

  3. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high- Q factor whispering gallery modes

    Science.gov (United States)

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy

    2010-09-01

    Resonance modes in single crystal sapphire (α-Al2O3) exhibit extremely high electrical and mechanical Q factors ( ≈109 at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T3 dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify “magic temperatures” between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  4. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  5. Erbium-doped crystalline YAG planar and ridge waveguides on quartz and sapphire substrates: deposition and material characterisation

    Science.gov (United States)

    Facchini, G.; Zappettini, A.; Canali, A.; Martinelli, M.; Gabetta, G.; Tallarida, G.

    2001-06-01

    Er-doped Yttrium-Aluminium-Garnet (YAG) planar and ridge waveguides have been grown on quartz and sapphire substrates. The waveguides have been structurally, morphologically and stoichiometrically characterised by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Doping concentrations up to 5% have been successfully demonstrated. Deposition of channel waveguide on sapphire substrate results in a correct ridge shape.

  6. Evaluation of the Quality of Sapphire Using X-Ray Rocking Curves and Double-Crystal X-Ray Topography

    Science.gov (United States)

    1994-05-01

    hard, high-strength, chemically resistant optical windows; and sub- srates for the growth of epitaxial films. The quality of a sapphire crystal can... crystal diffractometer. Single- crystal sapphire may be grown by a variety of different methods, of which the more common are Verneuil (flame fusion...Linear features (L), which may represent slight variations in lattice parameter along the crystal growth front, or dislocation networks, ad small

  7. Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

    Science.gov (United States)

    Yerci, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydinli, A.; Turan, R.

    2006-10-01

    Silicon nanocrystals, average sizes ranging between 3 and 7nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800°C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.

  8. Process for the Φ130 sapphire window element with long distance and high resolution

    Science.gov (United States)

    Xu, Zengqi; Su, Ying; Lei, Jianli; Guo, Rui; Zhang, Feng; Guo, Xinlong; Liu, Xuanmin; Sun, Taohui

    2016-10-01

    With the process test for the choice of materials, the test materials and the molds, the abrasives, the temperature and the different machining process monitoring parameters of the polishing machine, the process method and the quality control technology were figured out for the Φ130 sapphire window element with long distance and high resolution (hereinafter referred to as window element), meantime, the optimum process condition was determined to machine the element. The results were that the high resolution imaging window was processed with the surface roughness Ra of 0.639nm, the transmission distortion of λ/10 (λ=632.8nm), the parallel error of 5″, the resolution of 1.47″ and the focal length of 5 km, which can satisfy the imaging requirements better for the military photoelectric device for sapphire window with long distance and high resolution.

  9. Growth and Characterization of InN Thin Films on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    XIE Zi-Li; ZHANG Rong; XIU Xiang-Qian; LIU Bin; LI Liang; HAN Ping; GU Shu-Lin; SHI Yi; ZHENG You-Dou

    2007-01-01

    Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition(MOCVD).By employing three-step layer buffers,the mirror-like layers on two-inch sapphire wafers have been obtained.The structural,optical and electrical characteristics of InN are investigated by x-ray diffraction,scanning electron microscopy,atomic force microscopy,photoluminescence and infrared optical absorpton.The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70 eV at room temperature.The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm2/Vs,and 3.9×1018cm-3,respectively.

  10. Degradation of picosecond temporal contrast of Ti:sapphire lasers with coherent pedestals.

    Science.gov (United States)

    Khodakovskiy, Nikita; Kalashnikov, Mikhail; Gontier, Emilien; Falcoz, Franck; Paul, Pierre-Mary

    2016-10-01

    Recompressed pulses from Ti:sapphire chirped-pulse lasers are accompanied by a slowly decaying post-pulse pedestal that is coherent with the main pulse. The pedestal typically consists of numerous pulses with temporal separation in the picosecond range. The source of this artifact lies in the Ti:sapphire active medium itself, both in the Kerr-lens mode-locked oscillator and in subsequent amplifiers. In the presence of substantial self-phase modulation, after recompression the post-pedestal generates a mirror-symmetric pre-pulse pedestal. This pedestal severely degrades the leading edge of the output pulse. This degradation is far more limiting than the original post-pedestal and severely lowers the achievable temporal contrast.

  11. Achieving λ/10 resolution CW STED nanoscopy with a Ti:Sapphire oscillator.

    Directory of Open Access Journals (Sweden)

    Yujia Liu

    Full Text Available In this report, a Ti:Sapphire oscillator was utilized to realize synchronization-free stimulated emission depletion (STED microscopy. With pump power of 4.6 W and sample irradiance of 310 mW, we achieved super-resolution as high as 71 nm. With synchronization-free STED, we imaged 200 nm nanospheres as well as all three cytoskeletal elements (microtubules, intermediate filaments, and actin filaments, clearly demonstrating the resolving power of synchronization-free STED over conventional diffraction limited imaging. It also allowed us to discover that, Dylight 650, exhibits improved performance over ATTO647N, a fluorophore frequently used in STED. Furthermore, we applied synchronization-free STED to image fluorescently-labeled intracellular viral RNA granules, which otherwise cannot be differentiated by confocal microscopy. Thanks to the widely available Ti:Sapphire oscillators in multiphoton imaging system, this work suggests easier access to setup super-resolution microscope via the synchronization-free STED.

  12. Characterization of superconducting magnesium-diboride films on glassy carbon and sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, E.; Zavala, E. P. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000 Mexico D. F. (Mexico); Rocha, M. F. [Escuela Superior de Ingenieria Mecanica y Electrica, IPN, Mexico D. F. (Mexico); Jergel, M.; Falcony, C. [Departamento de Fisica, CINVESTAV-IPN, Apartado postal 14-740, 07000 Mexico D. F. (Mexico)

    2008-02-15

    IBA methods were applied to measure elemental depth profiles of precursors and superconducting MgB{sub 2} thin films deposited on glassy carbon (Good Fellows) and sapphire (Al{sub 2}O{sub 3}) substrates. For each type of substrates we obtained a pair of samples i.e. one amorphous precursor and one superconducting film which were then characterized. A 3{sup H}e{sup +} beam was used to bombard both, precursors and superconducting films in order to obtain the samples elemental composition profiles. The zero resistance T{sub co} and the middle of transition T{sub cm} values were 26.0 K and 29.7 K for the MgB{sub 2} film deposited on glassy carbon substrate. In the case of sapphire substrate the T{sub co} and T{sub cm} values were 25.0 K and 27.9 K, respectively. (Author)

  13. Nearly octave-spanning frequency comb generation in AlN-on-sapphire microresonators

    CERN Document Server

    Liu, Xianwen; Xiong, Bing; Wang, Lai; Wang, Jian; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

    2016-01-01

    We report a nearly octave-spanning optical frequency comb generation with a coverage of $\\sim$1000 nm in continuous-wave pumped aluminum nitride (AlN)-on-sapphire microring resonators. Thanks to optimized device design and fabrication process, high-quality-factor AlN microrings with high cavity finesse and low insertion loss are demonstrated. By tailoring the cavity dimension, a broadband anomalous dispersion is secured to facilitate the frequency comb generation. Blue-shifted dispersive wave emission as well as stimulated Raman scattering is observed, which helps extend the comb spectrum coverage. Our work suggests that AlN-on-sapphire can be an appealing platform for integrated nonlinear optics.

  14. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  15. Use of Be(p,{alpha}) and Be(p,d) Reactions to Determine Be Content in Sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Franklyn, C. B. [Radiation Science Department, Necsa, PO Box 582, Pretoria 0001 (South Africa)

    2011-12-13

    Since natural coloured sapphire ({alpha}-Al{sub 2}O{sub 3}) commands a high gem stone market price there is a need for a reliable method of identifying artificially coloured sapphire that has an inherently lower value. Diffusing beryllium into sapphire at high temperatures results in a coloured stone virtually indistinguishable from a natural one. Beryllium can occur naturally in sapphire but at levels of <1 ppma. Beryllium diffused sapphire typically contains >10 ppma, which is difficult to determine in a non destructive way. It is possible to utilize nuclear reaction analysis techniques to determine the beryllium content in a macroscopically non destructive way. Kinematically ideal reactions are Be(p,{alpha}) and Be(p,d) which, for Ep = 0.5 to 0.9 MeV, exhibit distinct reaction product signatures well separated from other proton induced reactions in aluminium or oxygen. Due to the lack of comprehensive cross section data for the Be(p,{alpha}) and Be(p,d) reactions in the energy range of interest, a series of measurements were made at the Van de Graaff accelerator facility at Necsa to create a new data base. A further outcome of these measurements was a deviation in reported values for the non-Rutherfordian proton back-scatter cross section. These new data bases, which extend to Ep = 2.6MeV, can now facilitate a procedure for determining beryllium content in sapphire.

  16. Evaluation of heat extraction through sapphire fibers for the GW observatory KAGRA

    OpenAIRE

    Khalaidovski, Alexander; Hofmann, Gerd; CHEN, DAN; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Allen O.; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka mine. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise. To reduce seismic noise, the mirrors will also be suspended from multi-stage pendulums. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as heat load from thermal radiation will need to be extracted through th...

  17. High energy terahertz pulses from organic crystals: DAST and DSTMS pumped at Ti:sapphire wavelength

    CERN Document Server

    Monoszlai, B; Jazbinsek, M; Hauri, C P

    2013-01-01

    High energy terahertz pulses are produced by optical rectification (OR) in organic crystals DAST and DSTMS by a Ti:sapphire amplifier system centered at 0.8 microns. The simple scheme provides broadband spectra between 1 and 5 THz, when pumped by collimated 60 fs near-infrared pump pulse and it is scalable in energy. Fluence-dependent conversion efficiency and damage threshold are reported as well as optimized OR at visible wavelength.

  18. Silicon-on-Sapphire Waveguides: Mode-converting Couplers and Four-wave Mixing

    Science.gov (United States)

    2014-09-01

    width of the waveguides was between 1600 and 1900 nm . Figure 1 shows gain bands for a waveguide with 500- nm height and 1700 - nm width, demonstrating...1. Calculated conversion efficiency of four-wave mixing in 1700 - nm wide silicon-on-sapphire waveguide. Color bar indicates conversion efficiency in...dominance. Previous investigations show that this spectral range is of interest for applications that include free-space communications, laser radar

  19. ZnO Nanostructures Grown on AlN/Sapphire Substrates by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WEI Hong-Yuan; HU Wei-Guo; ZHANG Pan-Feng; LIU Xiang-Lin; ZHU Qin-Sheng; WANG Zhan-Guo

    2007-01-01

    ZnO nanorods and nanotubes are successful synthesized on AlN/sapphire substrates by metal-organic chemical vapour deposition (MOCVD). The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the A1N under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.

  20. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate.

    Science.gov (United States)

    Dantan, Aurélien; Laurat, Julien; Ourjoumtsev, Alexei; Tualle-Brouri, Rosa; Grangier, Philippe

    2007-07-09

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate.

  1. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  2. A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

    Science.gov (United States)

    Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

    2001-01-01

    A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

  3. High Power Widely Tunable Narrow Linewidth All-Solid-State Pulsed Titanium-Doped Sapphire Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; LI Xue; SHENG Quan; SHI Chun-Peng; YIN Su-Jia; LI Bin; YU Xuan-Yi; WEN Wu-Qi; YAO Jian-Quan

    2011-01-01

    We report a widely tunable, narrow linewidth, pulsed Ti:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser. By using four dense Bint glass prisms as intra-cavity dispersive elements, the output wavelength can be continuously tuned over 675-970 nm and the spectral linewidth is shortened to 0.5nm. The maximum output power of 6.65 W at 780 nm is obtained under 23.4 Wpump power with repetition rate of 5.5 kHz; corresponding to an conversion efficiency of 28.4%. Due to the gain-switching characteristics of the Ti:sapphire laser, the output pulse duration is as short as 17.6ns.%@@ We report a widely tunable,narrow linewidth,pulsed Th:sapphire laser pumped by an all-solid-state Q-switched intra-cavity frequency-doubled Nd:YAG laser.By using four dense flint glass prisms as intra-cavity dispersive elements,the output wavelength can be continuously tuned over 675-970nm and the spectral linewidth is shortened to 0.5 nm.The maximum output power of 6.65 W at 780 run is obtained under 23.4 W pump power with repetition rate of 5.5 kHz,corresponding to an conversion efficiency of 28.4%.Due to the gain-switching characteristics of the Ti:sapphire laser,the output pulse duration is as short as 17.6ns.

  4. Amplified spontaneous emission and its restraint in a terawatt Ti:sapphire amplifier

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Amplified spontaneous emission (ASE) and its restraint in a femtosecond Ti: sapphire chirped_pulse amplifier were investigated. The noises arising from ASE were effectively filtered out in the spatial, temporal and spectral domain. Pulses as short as 38 fs were amplified to peak power of 1.4 TW. The power ratio between the amplified femtosecond pulse and the ASE was higher than 106:1.

  5. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  6. Milli-electronvolt monochromatization of hard X-rays with a sapphire backscattering monochromator

    Science.gov (United States)

    Sergueev, I.; Wille, H.-C.; Hermann, R. P.; Bessas, D.; Shvyd’ko, Yu. V.; Zając, M.; Rüffer, R.

    2011-01-01

    A sapphire backscattering monochromator with 1.1 (1) meV bandwidth for hard X-rays (20–40 keV) is reported. The optical quality of several sapphire crystals has been studied and the best crystal was chosen to work as the monochromator. The small energy bandwidth has been obtained by decreasing the crystal volume impinged upon by the beam and by choosing the crystal part with the best quality. The monochromator was tested at the energies of the nuclear resonances of 121Sb at 37.13 keV, 125Te at 35.49 keV, 119Sn at 23.88 keV, 149Sm at 22.50 keV and 151Eu at 21.54 keV. For each energy, specific reflections with sapphire temperatures in the 150–300 K region were chosen. Applications to nuclear inelastic scattering with these isotopes are demonstrated. PMID:21862862

  7. Growth of p-CdTe thin films on n-GaN/sapphire

    Science.gov (United States)

    Jung, Younghun; Chun, Seunju; Kim, Donghwan; Kim, Jihyun

    2011-07-01

    CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl 2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl 2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

  8. Molecular beam epitaxy of InN dots on nitrided sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Yaroslav E.; Dengel, Radu-Gabriel; Stebounova, LarissaV.; Leone, Stephen R.

    2007-04-20

    A series of self-assembled InN dots are grown by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE) directly on nitrided sapphire. Initial nitridation of the sapphire substrates at 900 C results in the formation of a rough AlN surface layer, which acts as a very thin buffer layer and facilitates the nucleation of the InN dots according to the Stranski-Krastanow growth mode, with a wetting layer of {approx}0.9 nm. Atomic force microscopy (AFM) reveals that well-confined InN nanoislands with the greatest height/width at half-height ratio of 0.64 can be grown at 460 C. Lower substrate temperatures result in a reduced aspect ratio due to a lower diffusion rate of the In adatoms, whereas the thermal decomposition of InN truncates the growth at T>500 C. The densities of separated dots vary between 1.0 x 10{sup 10} cm{sup -2} and 2.5 x 10{sup 10} cm{sup -2} depending on the growth time. Optical response of the InN dots under laser excitation is studied with apertureless near-field scanning optical microscopy and photoluminescence spectroscopy, although no photoluminescence is observed from these samples. In view of the desirable implementation of InN nanostructures into photonic devices, the results indicate that nitrided sapphire is a suitable substrate for growing self-assembled InN nanodots.

  9. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  10. Preparation, properties and application of sapphire single-crystal fibers grown by the EFG method

    Directory of Open Access Journals (Sweden)

    Kubát J.

    2013-05-01

    Full Text Available Sapphire – the single crystal of aluminum oxide (Al2O3 – is one of the most important artificially produced materials. The sapphire fibres studied were grown in Crytur using the “edge-defined film-fed growth” (EFG technique. Their unique physical and chemical properties can be employed in various applications. Due to their high refractive index and a broad transmission band spanning the ultraviolet, visible and infrared bands, sapphire fibres are perfect waveguides in harsh environments. The current major applications are Er:YAG laser beam delivery and pyrometric and spectrometric measurements in furnaces, combustion engines, etc. In this paper we summarize an adjustment of the EFG method to grow thin filaments by giving possible molybdenum die designs. We investigated the fibres using an optical microscope and measured their transmission of an Er:YAG laser beam (2.94 μm. The attenuation of the tested samples is approximately 0.1 dB/cm.

  11. Layered MoS{sub 2} grown on c-sapphire by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Yen-Teng; Ma, Chun-Hao; Luong, Tien-Tung; Wei, Lin-Lung; Yen, Tzu-Chun; Chu, Yung-Ching; Tu, Yung-Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Hsu, Wei-Ting; Chang, Wen-Hao [Department of Electrophysics, National Chiao Tung University, Hsinchu (China); Pande, Krishna Prasad [Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu (China); Chang, Edward Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu (China)

    2015-03-01

    Layered growth of molybdenum disulphide (MoS{sub 2}) was successfully achieved by pulsed laser deposition (PLD) method on c -plane sapphire substrate. Growth of monolayer to a few monolayer MoS{sub 2}, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A{sub 1g}-E{sup 1}{sub 2g}) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm{sup -1}, suggesting a monolayer MoS{sub 2} was obtained. Two-dimensional (2D) layer growth of MoS{sub 2} is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002)MoS{sub 2} and [2 anti 1 anti 10] sapphire//[0 anti 1 anti 10]MoS{sub 2} is determined. The results imply that PLD is suitable for layered MoS{sub 2} growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS{sub 2}, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

    2015-07-01

    Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

  13. Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Tang Jun; Kang Chao-Yang; Li Li-Min; Liu Zhong-Liang; Yan Wen-Sheng; Wei Shi-Qiang; Xu Peng-Shou

    2012-01-01

    A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy(SSMBE)equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction(RHEED),X-ray diffractionφ scans,Raman spectroscopy,and near edge X-ray absorption fine structure(NEXAFS)spectroscopy.The results of the RHEED and φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 mm.

  14. Technology for Boundaries

    DEFF Research Database (Denmark)

    Bødker, Susanne; Kristensen, Jannie Friis; Nielsen, Christina

    2003-01-01

    This paper presents a study of an organisation, which is undergoing a process transforming organisational and technological boundaries. In particular, we shall look at three kinds of boundaries: the work to maintain and change the boundary between the organisation and its customers; boundaries.......After analysing the history and the current boundary work, the paper will propose new technological support for boundary work. In particular the paper will suggest means of supporting boundaries when these are productive and for changing boundaries when this seems more appropriate. In total, flexible technologies...... seem a core issue when dealing with technology for boundaries....

  15. Fe-N{sub x}/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Li, E-mail: xl0522@126.com [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Zou, Chunli; Shi, Xiaolei [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Pan, Guoshun, E-mail: pangs@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China); Luo, Guihai; Zhou, Yan [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057 (China)

    2015-07-15

    Highlights: • A novel non-noble metal catalyst (Fe-N{sub x}/C) was prepared. • Fe-N{sub x}/C shows remarkable catalytic activity for improving the removal rate of sapphire in alkaline solution. • The optimum CMP removal by Fe-N{sub x}/C yielded a superior surface finish of 0.078 nm the average roughness. • Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group possibly serving as the catalytic sites. • A soft hydration layer (boehmite, AlO(OH)) was generated on the surface of sapphire during CMP process. - Abstract: In this paper, a novel non-noble metal catalyst (Fe-N{sub x}/C) is used to improve the removal mass of sapphire as well as obtain atomically smooth sapphire wafer surfaces. The results indicate that Fe-N{sub x}/C shows good catalytic activity towards sapphire removal rate. And the material removal rates (MRRs) are found to vary with the catalyst content in the polishing fluid. Especially that when the polishing slurry mixes with 16 ppm Fe-N{sub x}/C shows the maximum MRR and its removal mass of sapphire is 38.43 nm/min, more than 15.44% larger than traditional CMP using the colloidal silicon dioxide (SiO{sub 2}) without Fe-N{sub x}/C. Catalyst-assisted chemical–mechanical polishing of sapphire is studied with X-ray photoelectron spectroscopy (XPS). It is found that the formation of a soft hydration layer (boehmite, γ-AlOOH or γ-AlO(OH)) on sapphire surface facilitates the material removal and achieving fine surface finish on basal plane. Abrasives (colloid silica together with magnetite, ingredient of Fe-N{sub x}/C) with a hardness between boehmite and sapphire polish the c-plane of sapphire with good surface finish and efficient removal. Fe{sub 2}O{sub 3}, Fe{sub 3}O{sub 4}, pyridinic N as well as pyrrolic N group would be the catalytical active sites and accelerate this process. Surface quality is characterized with atomic force microscopy (AFM). The optimum CMP removal by Fe-N{sub x}/C also yields a superior

  16. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Zhang, Martin Y. [School of Industrial Engineering, Purdue University, 315N. Grant St, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, 1205W State St, West Lafayette, Indiana 47907 (United States); Schwartz, Bradley D. [Goodrich Corporation, UTC Aerospace Systems, 100 Wooster Heights Road, Danbury, Connecticut 06810 (United States); Cheng, Gary J., E-mail: gjcheng@purdue.edu [School of Industrial Engineering, Purdue University, 315N. Grant St, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, 1205W State St, West Lafayette, Indiana 47907 (United States); School of Mechanical Engineering, Purdue University, 585 Purdue Mall, West Lafayette, Indiana 47907 (United States)

    2014-05-19

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm{sup 2}/V s at a low carrier concentration of 7.9 × 10{sup +19} cm{sup −3}. This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  17. Spatially resolved analytical electron microscopy at grain boundaries of {alpha}-Al{sub 2}O{sub 3}; Ortsaufgeloeste analytische Elektronenmikroskopie an Korngrenzen in {alpha}Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Nufer, S.

    2001-10-01

    Aluminum oxide, {alpha}-Al{sub 2}O{sub 3}, is a common structural ceramic material. The most technologically important properties are either determined or strongly influenced by the polycrystalline microstructure. For instance, the grain boundaries control the mechanical behavior (e.g. plasticity, creep, and fracture) or various transport phenomena (e.g. ion diffusion, segregation, and electrical resistivity). In order to understand the structure-properties relationships, it is therefore important to characterize the structure and chemistry of grain boundaries, both experimentally and theoretically. In this work the electronic structure of the basal and rhombohedral twin grain boundaries and the impurity excess at different tilt grain boundaries in bicrystals were investigated, using electron energy-loss spectroscopy (EELS) and energy dispersive X-ray spectroscopy (EDXS). The electronic structure of the rhombohedral twin grain boundary was determined by comparing spatially resolved EELS measurements of the O-K ionisation edge with the theoretical density of states (DOS), obtained from local density functional theory (LDFT) calculations. The interface excess of impurities was quantitatively analysed at grain boundaries with and without Y-doping. (orig.)

  18. Shear-coupled grain-boundary migration dependence on normal strain/stress

    Science.gov (United States)

    Combe, N.; Mompiou, F.; Legros, M.

    2017-08-01

    In specific conditions, grain-boundary (GB) migration occurs in polycrystalline materials as an alternative vector of plasticity compared to the usual dislocation activity. The shear-coupled GB migration, the expected most efficient GB based mechanism, couples the GB motion to an applied shear stress. Stresses on GB in polycrystalline materials seldom have, however, a unique pure shear component. This work investigates the influence of a normal strain on the shear coupled migration of a Σ 13 (320 )[001 ] GB in a copper bicrystal using atomistic simulations. We show that the yield shear stress inducing the GB migration strongly depends on the applied normal stress. Beyond, the application of a normal stress on this GB qualitatively modifies the GB migration: while the Σ 13 (320 )[001 ] GB shear couples following the 〈110 〉 migration mode without normal stress, we report the observation of the 〈010 〉 mode under a sufficiently high tensile normal stress. Using the nudge elastic band method, we uncover the atomistic mechanism of this 〈010 〉 migration mode and energetically characterize it.

  19. Sapphire: a better material for atomization and in situ collection of silver volatile species for atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Musil, Stanislav, E-mail: stanomusil@biomed.cas.cz; Matoušek, Tomáš; Dědina, Jiří

    2015-06-01

    Sapphire is presented as a high temperature and corrosion resistant material of an optical tube of an atomizer for volatile species of Ag generated by the reaction with NaBH{sub 4}. The modular atomizer design was employed which allowed to carry out the measurements in two modes: (i) on-line atomization and (ii) in situ collection (directly in the optical tube) by means of excess of O{sub 2} over H{sub 2} in the carrier gas during the trapping step and vice versa in the volatilization step. In comparison with quartz atomizers, the sapphire tube atomizer provides a significantly increased atomizer lifetime as well as substantially improved repeatability of the Ag in situ collection signals shapes. In situ collection of Ag in the sapphire tube atomizer was highly efficient (> 90%). Limit of detection in the on-line atomization mode and in situ collection mode, respectively, was 1.2 ng ml{sup −1} and 0.15 ng ml{sup −1}. - Highlights: • Sapphire was tested as a new material of an atomizer tube for Ag volatile species. • Two measurement modes were investigated: on-line atomization and in situ collection. • In situ collection of Ag was highly efficient (> 90%) with LOD of 0.15 ng ml{sup −1}. • No devitrification of the sapphire tube observed in the course of several months.

  20. Origin of sapphires from a lamprophyre dike at Yogo Gulch, Montana, USA: Clues from their melt inclusions

    Science.gov (United States)

    Palke, Aaron C.; Renfro, Nathan D.; Berg, Richard B.

    2016-09-01

    Gem corundum (sapphire) has been mined from an ultramafic lamprophyre dike at Yogo Gulch in central Montana for over 100 years. The sapphires bear signs of corrosion showing that they were not in equilibrium with the lamprophyre that transported them; however, their genesis is poorly understood. We report here the observation of minute glassy melt inclusions in Yogo sapphires. These inclusions are Na- and Ca-rich, Fe-, Mg-, and K-poor silicate glasses with compositions unlike that of the host lamprophyre. Larger, recrystallized melt inclusions contain analcime and calcite drawing a striking resemblance to leucocratic ocelli in the lamprophyre. We suggest here that sapphires formed through partial melting of Al-rich rocks, likely as the lamprophyre pooled at the base of the continental crust. This idea is corroborated by MELTS calculations on a kyanite-eclogite protolith which was presumably derived from a troctolite precursor. These calculations suggest that corundum can form through peritectic melting of kyanite. Linking the melt inclusions petrologically to the lamprophyre represents a significant advancement in our understanding of sapphire genesis and sheds light on how mantle-derived magmas may interact with the continental crust on their ascent to the surface.

  1. Growth and characterization of VO{sub 2}/p-GaN/sapphire heterostructure with phase transition properties

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Jiming, E-mail: jmbian@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China); Wang, Minhuan; Miao, Lihua; Li, Xiaoxuan; Luo, Yingmin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhang, Dong [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); New Energy Source Research Center of Shenyang Institute of Engineering, Shenyang 110136 (China); Zhang, Yuzhi [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China)

    2015-12-01

    Highlights: • VO{sub 2} films were deposited on p-GaN/sapphire substrates by PLD. • A well-defined VO{sub 2}/p-GaN/sapphire interface was observed. • The valence state of V in VO{sub 2} films was confirmed by XPS analyses. • A distinct reversible SMT phase transition behavior was observed. - Abstract: High quality pure phase VO{sub 2} films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO{sub 2}/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}, no other valence state of V was detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) phase transition with resistance change up to nearly three orders of magnitude was observed in the temperature dependent electrical resistance measurement, which was comparable to the high quality VO{sub 2} film grown directly on sapphire substrates. Our present findings will give a deeper insight into the physical mechanism behind the exotic characteristics of VO{sub 2}/p-GaN heterostructure, and further motivate research in novel devices with combined functional properties of both correlated oxide and wide bandgap nitride semiconductors.

  2. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junsu [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Sin, Young-Gwan [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113 (Korea, Republic of); Kim, Jae-Hyun [Department of Nano-Mechanics, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of); Kim, Jaegu, E-mail: gugu99@kimm.re.kr [Department of Nano-Manufacturing Technology, Korea Institute of Machinery and Materials, 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 34103 (Korea, Republic of)

    2016-10-30

    Highlights: • Fundamental relationship between laser irradiation and adhesion strength, between gallium-nitride light emitted diode and sapphire substrate, is proposed during selective laser lift-off. • Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate. • Ga precipitation caused by thermal decomposition and roughened interface caused by thermal damage lead to the considerable difference of adhesion strength at the interface. - Abstract: Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  3. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    CERN Document Server

    Karacheban, O; Hempel, M; Henschel, H; Lange, W; Leonard, J L; Levy, I; Lohmann, W; Schuwalow, S

    2015-01-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitoring systems at the Large Hadron Collider, FLASH or XFEL. Artificial diamond sensors are currently widely used as sensors in these systems. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm^2 size and 525 micrometer thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the dete...

  4. Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions

    Science.gov (United States)

    Creighton, J. Randall; Coltrin, Michael E.; Figiel, Jeffrey J.

    2017-04-01

    Growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measurements are very difficult because of substrate transparency in the near-IR ( 900 nm) where conventional pyrometers detect radiation. The transparency problem can be solved by using a mid-IR pyrometer operating at a wavelength ( 7500 nm) where sapphire is opaque. We employ a mid-IR pyrometer to measure the sapphire wafer temperature and simultaneously a near-IR pyrometer to measure wafer pocket temperature, while varying reactor pressure in both a N2 and H2 ambient. Near 1300 °C, as the reactor pressure is lowered from 300 Torr to 10 Torr the wafer temperature drops dramatically, and the ∆T between the pocket and wafer increases from 20 °C to 250 °C. Without the mid-IR pyrometer the large wafer temperature change with pressure would not have been noted. In order to explain this behavior we have developed a quasi-2D thermal model that includes a proper accounting of the pressure-dependent thermal contact resistance, and also accounts for sapphire optical transmission. The model and experimental results demonstrate that at most growth conditions the majority of the heat is transported from the wafer pocket to the wafer via gas conduction, in the free molecular flow limit. In this limit gas conductivity is independent of gap size but first order in pressure, and can quantitatively explain results from 20 to 300 Torr. Further analysis yields a measure of the thermal accommodation coefficients; α(H2) =0.23, α(N2) =0.50, which are in the range typically measured.

  5. Effect of Ti:Sapphire-femtosecond laser on the surface roughness of ceramics.

    Science.gov (United States)

    Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

    2015-12-01

    Some of these adult patients have ceramic crowns, to which orthodontists have concerns about bonding brackets. The aim of the present study was to evaluate the effect of a Ti:Sapphire femtosecond (fs) laser (Integra-C-3.5, Quantronix, NY) on the surface roughness of two ceramic surfaces (feldspathic and IPS Empress e-Max) and to compare results with those of two other lasers (Er:YAG and Nd:YAG) and conventional techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. Ceramic discs were fabricated (n = 150) and divided into two groups, each of which was then divided into five subgroups prepared with Ti:Sapphire fs, Nd:YAG, or Er:YAG lasers, sandblasting, or HF acid (n = 15). The surface roughness of the ceramic discs was evaluated using a profilometer (Mitotoyo Surf Test SJ 201 P/M; Mitutoyo Corp, Japan) before and after each surface treatment. Three traces were recorded for each specimen at three different locations in each direction, providing nine measurements per sample, which were then averaged to obtain the surface roughness value. Data were analyzed using the Wilcoxon signed-rank test (P laser was associated with the highest mean roughness value. AFM images of the ceramic surfaces treated confirmed that the fs-laser-treated surfaces had the highest degree of irregularity. Within the limitations of this in vitro study, the Ti:Sapphire fs laser yielded the highest surface roughness and could be an alternative ceramic surface treatment to increase bond strength. © 2015 Wiley Periodicals, Inc.

  6. Microstructure characterization and optical properties of sapphire after helium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Mian; Yang, Liang [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Shen, Huahai [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Wei [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xiang, Xia, E-mail: xiaxiang@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Wanguo, E-mail: wgzheng_caep@sina.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Guo, Decheng [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Huang, Jin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, Kai [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Yuan, Xiaodong, E-mail: yxd66my@163.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-06-15

    The (0 0 0 1) sapphire samples are irradiated with 60 keV helium ions at the fluences of 5 × 10{sup 16}, 1 × 10{sup 17}and 5 × 10{sup 17} ions/cm{sup 2} at room temperature. After implantation, two broad absorption bands at 320–460 and 480–700 nm are observed and their intensities increase with the increasing ion fluence. The grazing incidence X-ray diffraction results indicate that the {0 0 0 1} diffraction peaks of sapphire decrease and broaden due to the disorientation of the generated crystallites after ion irradiation. The microstructure evolution is examined by the scanning and transmission electron microscopes. The surface becomes rough because of the aggregation of helium bubbles and migration towards the surface. There is a lattice expansion up to ∼4.5% in the implanted area and the lattice distortion measured from dispersion of (1 1 0) diffraction is ∼4.6°. Such strain of crystal lattice is rather large and leads to contrast fluctuation at scale of 1–2 nm (the bubble size). The laser induced damage threshold (LIDT) is investigated to understand the effect of helium ion beam irradiation on the laser damage resistance of sapphire components and the results show that the LIDT decreases from 5.4 to 2.5 J/cm{sup 2} due to the absorptive color centers, helium bubbles and defects induced by helium ion implantation. The laser damage morphologies of samples before and after ion implantation are also presented.

  7. Hydrogen defects in α-Al2O3 and water weakening of sapphire and alumina ceramics between 600°C and 1000°C: II. Mechanical properties

    Science.gov (United States)

    Castaing, J.; Kronenberg, A.K.; Kirby, S.H.; Mitchell, T.E.

    2000-01-01

    Hydrogen impurities in alumina have been introduced by hydrothermal annealing (see part I). In this paper, we report on reductions in the flow strength of α-Al2O3 single crystals and polycrystals associated with hydrogen incorporation. Prior to deformation, α-Al2O3 single crystal and ceramic specimens were annealed in the presence of supercritical water at 850° or 900°C, under 1500 MPa pressure. Sapphire and alumina ceramics were plastically deformed between 600° and 1000°C under 1500 MPa pressure, by the addition of a uniaxial stress. Flow stresses are reduced by a factor of two, due to the presence of water, for sapphire and large grain (30–50 μm) polycrystals, as a result of enhanced dislocation mobility. Flow stresses of fine-grained (3–5 μm) polycrystals are reduced by water by a factor of six. This large reduction in strength is attributed to a change in mechanism from dislocation glide under dry conditions to grain boundary sliding under hydrothermal conditions.

  8. Pulse formation and characteristics of the cw mode-locked titanium-doped sapphire laser

    Science.gov (United States)

    Zschocke, Wolfgang; Stamm, Uwe; Heumann, Ernst; Ledig, Mario; Guenzel, Uwe; Kvapil, Jiri; Koselja, Michael P.; Kubelka, Jiri

    1991-10-01

    We report on measurements of transient and steady-state pulse characteristics of an acousto- optically mode-locked titanium-doped sapphire laser. During the pulse evolution, oscillations in the pulse width and pulse energy are found. A steady state is reached after about 40 to 60 microsecond(s) . The steady-state pulse width is strongly influenced by the mode-locking loss as well as the intracavity bandwidth. Shortest pulses of typically 15 ps are obtained. The experiment is compared with results of a simple computer simulation.

  9. Long-term optical phase locking between femtosecond Ti:sapphire and Cr:forsterite lasers

    Science.gov (United States)

    Kobayashi, Yohei; Yoshitomi, Dai; Kakehata, Masayuki; Takada, Hideyuki; Torizuka, Kenji

    2005-09-01

    Long-term optical phase-coherent two-color femtosecond pulses were generated by use of passively timing-synchronized Ti:sapphire and Cr:forsterite lasers. The relative carrier-envelope phase relation was fixed by an active feedback loop. The accumulated phase noise from 10 mHz to 1 MHz of the locked beat note was 0.43 rad, showing tight phase locking. The optical frequency fluctuation between two femtosecond combs was submillihertz, with a 1 s averaged counter measurement over 3400 s, leading to a long-term femtosecond frequency-comb connection.

  10. A 10-Hz terawatt class Ti:sapphire laser system: Development and applications

    Indian Academy of Sciences (India)

    A K Sharma; J Smedley; T Tsang; T Rao

    2010-11-01

    We developed a two-stage Ti:sapphire laser system to generate 16 mJ/80 fs laser pulses at a pulse repetition rate of 10 Hz. The key deriver for the present design is implementing a highly efficient symmetric confocal pre-amplifier and employing a simple, inexpensive synchronization scheme relying only on a commercial digital delay generator. We characterized the amplified pulses in spatial, spectral and temporal domains. The laser system was used to investigate various nonlinear optical processes, and to modify the optical properties of metal and semiconductor surfaces. We are currently building a third amplifier to boost the laser power to the multi-terawatt range.

  11. Grating-coupled silicon-on-sapphire integrated slot waveguides operating at mid-infrared wavelengths.

    Science.gov (United States)

    Zou, Yi; Subbaraman, Harish; Chakravarty, Swapnajit; Xu, Xiaochuan; Hosseini, Amir; Lai, Wei-Cheng; Wray, Parker; Chen, Ray T

    2014-05-15

    We demonstrate subwavelength bidirectional grating (SWG) coupled slot waveguide fabricated in silicon-on-sapphire for transverse electric polarized wave operation at 3.4 μm wavelength. Coupling efficiency of 29% for SWG coupler is experimentally achieved. Propagation loss of 11  dB/cm has been experimentally obtained for slot waveguides. Two-step taper mode converters with an insertion loss of 0.13 dB are used to gradually convert the strip waveguide mode into slot waveguide mode.

  12. Autonomous cryogenic sapphire oscillators employing low vibration pulse-tube cryocoolers at NMIJ

    Science.gov (United States)

    Ikegami, Takeshi; Watabe, Ken-ichi; Yanagimachi, Shinya; Takamizawa, Akifumi; Hartnett, John G.

    2016-06-01

    Two liquid-helium-cooled cryogenic sapphire-resonator oscillators (CSOs), have been modified to operate using cryo-refrigerators and low-vibration cryostats. The Allan deviation of the first CSO was evaluated to be better than 2 x 10-15 for averaging times of 1 s to 30 000 s, which is better than that of the original liquid helium cooled CSO. The Allan deviation of the second CSO is better than 4 x 10-15 from 1 s to 6 000 s averaging time.

  13. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

    Institute of Scientific and Technical Information of China (English)

    WU Meng; ZENG Yi-Ping; WANG Jun-Xi; HU Qiang

    2011-01-01

    @@ A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal- organic chemical vapor deposition (MOCVD).The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered.Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed.A pattern model is also proposed to analyze the possible mechanisms in atomic scale.

  14. Ultrahigh resolution optical coherence tomography with femtosecond Ti:sapphire laser and photonic crystal fiber

    Institute of Scientific and Technical Information of China (English)

    XUE Ping; James G FUJIMOTO

    2008-01-01

    Optical coherence tomography (OCT) with ultrahigh axial resolution was achieved by the super-contin- uum generated by coupling femtosecond pulses from a commercial Ti :sapphire laser into an air-silica microstructure fiber. The visible spectrum of the super-continuum from 450 to 700 nm centered at 540 nm can be generated. A free-space axial OCT resolution of 0.64 IJm was achieved. The sensitivity of OCT system was 108 dB with incident light power 3 mW at sample, only 7dB below the theoretical limit. Subcellular OCT imaging was also demonstrated, showing great potential for biomedical application.

  15. Analysis of tunable picosecond pulse generation from a distributed feedback Ti:sapphire laser

    Institute of Scientific and Technical Information of China (English)

    Hong Zhi; Yao Xiao-Ke

    2004-01-01

    A distributed feedback Ti:sapphire laser (DFTL) pumped by a 532nm Q-switched pulse is proposed for the generation of tunable picosecond pulses. With coupled rate equation model, the temporal characteristics of DFTL are obtained. The numerical solutions show that the DFTL pulse with a 50-ps pulse duration and as much as 3.SmJ pulse energy can be obtained under 40-m J, 5-ns pulse pumping. The dependence of output pulse width on the laser crystal's length, pumping pulse duration, and pumping rate is also discussed in detail.

  16. Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching.

    Science.gov (United States)

    Moser, Rüdiger; Ojha, Nirdesh; Kunzer, Michael; Schwarz, Ulrich T

    2011-11-21

    We demonstrate the realization of sub-surface channels in sapphire prepared by ultraviolet picosecond laser irradiation and subsequent selective wet etching. By optimizing the pulse energy and the separation between individual laser pulses, an optimization of channel length can be achieved with an aspect ratio as high as 3200. Due to strong variation in channel length, further investigation was done to improve the reproducibility. By multiple irradiations the standard deviation of the channel length could be reduced to 2.2%. The achieved channel length together with the high reproducibility and the use of a commercial picosecond laser system makes the process attractive for industrial application.

  17. Containerless laser-induced flourescence study of vaporization and optical properties for sapphire and alumina

    Science.gov (United States)

    Nordine, Paul C.; Schiffman, Robert A.

    1988-01-01

    Evaporation of aluminum oxide was studied from 1800 to 2327 K by laser-induced flourescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO2 laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al2O3. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

  18. Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods

    Science.gov (United States)

    Boquillon, J. P.; Said, J.

    1992-04-01

    The design and the development of a flashlamp-pumped Ti:Sapphire laser is described. Design criteria are discussed and performance improvements using different types of fluorescent UV converters or filters, such as organic dyes or doped glass are presented. We have tested different laser rods at various Ti-concentrations obtained by Verneuil or Czochralski growth techniques. The maximum laser output energy of 540 mJ with a differential efficiency up to 1% was achieved by using only a pyrex filter surrounding the laser rod.

  19. A higher-order-mode fiber delivery for Ti:Sapphire femtosecond lasers

    DEFF Research Database (Denmark)

    Jespersen, Kim Giessmann; Le, Tuan; Grüner-Nielsen, Lars Erik

    2010-01-01

    We report the first higher-order-mode fiber with anomalous dispersion at 800nm and demonstrate its potential in femtosecond pulse delivery for Ti:Sapphire femtosecond lasers. We obtain 125fs pulses after propagating a distance of 3.6 meters in solid-silica fiber. The pulses could be further...... compressed in a quartz rod to nearly chirp-free 110fs pulses. Femtosecond pulse delivery is achieved by launching the laser output directly into the delivery fiber without any pre-chirping of the input pulse. The demonstrated pulse delivery scheme suggests scaling to >20meters for pulse delivery in harsh...

  20. Measurement of Birefringence of Low-Loss, High-Reflectance Coating of M-Axis Sapphire

    OpenAIRE

    2001-01-01

    The birefringence of a low-loss, high-reflectance coating applied to an 8-cm-diameter sapphire crystal grown in the m-axis direction has been mapped. By monitoring the transmission of a high-finesse Fabry-Perot cavity as a function of the polarization of the input light, we find an upper limit for the magnitude of the birefringence of 2.5 x 10^-4 rad and an upper limit in the variation in direction of the birefringence of 10 deg. These values are sufficiently small to allow consideration of m...

  1. Synchronization of an Ultrafast Ti:Sapphire Laser to the S-Band Microwave

    Institute of Scientific and Technical Information of China (English)

    LIU Sheng-Guang; WANG Ming-Kai; SUN Da-Rui; DAI Jian-Ping; LI Yong-Gui

    2004-01-01

    @@ We have synchronized a 102-MHz ultrafast self-mode-locked Ti:sapphire laser to a 2856-MHz rf source with the sample-locking technology. The relative root-mean-square time-jitter is 0.57ps and the maximum time jitter is 2.60ps. This is the first time that synchronization between the ultrafast laser pulse and the s-band microwave has been accomplished in China. Potential applications include synchronization of lasers and rf power sources in particle accelerator experiments and high-resolution pump-probe experiments.

  2. All solid-state, injection-seeded Ti: sapphire ring laser

    Institute of Scientific and Technical Information of China (English)

    Ting Yu; Weibiao Chen; Jun Zhou; Jinzi Bi; Junwen Cui

    2005-01-01

    @@ In this letter, we present an all solid-state, injection-seeded Ti:sapphire laser. The laser is pumped by a laser diode pumped frequency-doubled Nd:YAG laser, and injection-seeded by an external cavity laser diode with the wavelength between 770 and 780 nm. The single longitude mode and the doubling efficiency of the laser are obtained after injection seeding. The experimental setup and relative results are reported.It is a good candidate laser source for mobile differential absorption lidar (DIAL) system.

  3. Homogenous Crack-Free Large Size YBCO/YSZ/Sapphire Films for Application

    Science.gov (United States)

    Almog, B.; Azoulay, M.; Deutscher, G.

    2006-09-01

    YBa2Cu3O7-δ (YBCO) films grown on Sapphire are highly suitable for applications. The production of large size (2-3″) homogeneous, thick (d ⩾ 600nm) films of high quality is of major importance. We report the growth of such films using a buffer layer of Yttrium-stabilized ZrO2(YSZ). The films are highly homogeneous and show excellent mechanical properties. They exhibit no sign of cracking even after many thermal cycles. Their critical thickness exceeds 1000nm. However, because of the large lattice mismatch there is a decrease in the electric properties(increases Rs, decreases jc).

  4. Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method

    Science.gov (United States)

    Samanta, Gaurab; Yeckel, Andrew; Bourret-Courchesne, Edith D.; Derby, Jeffrey J.

    2012-11-01

    The micro-pulling-down (μ-PD) crystal growth of sapphire fibers, whose steady-state limits were the focus of our prior study [Samanta et al., Journal of Crystal Growth 335 (2011) 148-159], is further examined using a parametric sensitivity computation derived by linearizing the nonlinear model around a quasi-steady-state (QSS). In addition, transient analyses are performed to assess inherent stability and dynamic responses in this μ-PD system. Information from these two approaches enlarges our understanding of this particular process, and the approaches themselves are put forth as valuable complements to classical QSS analysis.

  5. Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Lipski, Frank; Roesch, Rudolf; Scholz, Ferdinand [Institute of Optoelectronics, University of Ulm (Germany)

    2010-07-01

    We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution X-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400 arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.

  6. Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

    Science.gov (United States)

    Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo

    2017-09-01

    The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.

  7. Multimode interference and a white light scanning Michelson interferometer with a 400-mm sapphire fiber sensing head

    Science.gov (United States)

    Li, Tianchu; May, Russell G.; Wang, Anbo; Claus, Richard O.

    1998-08-01

    In this paper we present the analysis of multimode (MM) interference induced by MM fiber interferometers and report the development of a white light scanning fiber Michelson interferometer with a sapphire fiber sensing head for the measurement of position-distance at high temperatures. The 'mode fading' effect in standard graded 50/125 micrometers fiber and independent 'inter-mode interference' in 100 micrometers step index profile fiber are discussed. By means of the 'mode selecting' technique, proposed and developed in this work, we demonstrated white light fringes with signal to noise ratios of more than 12 with a sensing head composed of a 400 mm long lead sapphire fiber and an uncoated sapphire target fiber.

  8. Antibody-forming cells and serum hemolysin responses of pastel and sapphire mink inoculated with Aleutian disease virus.

    Science.gov (United States)

    Lodmell, D L; Bergman, R K; Hadlow, W J

    1973-11-01

    The effect of Aleutian disease virus (ADV) on serum hemolysin titers and antibody-forming cells in lymph nodes and spleens of sapphire and pastel mink inoculated with goat erythrocytes (G-RBC) was investigated. ADV injected 1 day after primary antigenic stimulation with G-RBC did not depress the immune responses of either color phase for a period of 26 days. However, when G-RBC were injected 47 days after ADV, both the number of antibody-forming cells and hemolysin titers were more markedly depressed in sapphire than in pastel mink. The results are discussed in relation to the greater susceptibility of sapphire mink and the variable susceptibility of pastel mink to the Pullman isolate of ADV.

  9. Study of Boundary Structures.

    Science.gov (United States)

    1982-09-01

    THEORY OF ABC-CBA STACKING BOUNDARY IN fcc STRUCTURE .......... 11 - 4 TRANSITIONS AND PHASE EQUILIBRIA AMONG GRAIN BOUNDARY STRUCTURES...19 B THEORY OF ABC-CBA STACKING BOUNDARY IN fcc STRUCTURE .......... 37 C TRANSITIONS AND PHASE EQUILIBRIA AMONG GRAIN BOUNDARY...layer structure. 10 SECTION 3 THEORY OF ABC-CBA STACKING BOUNDARY IN fcc STRUCTURE The (111) planes of the fcc structure is stacked as ABCABC... as

  10. Generalized Supersymetric Boundary State

    OpenAIRE

    1999-01-01

    Following our previous paper (hep-th/9909027), we generalize a supersymmetric boundary state so that arbitrary configuration of the gauge field coupled to the boundary of the worldsheet is incorpolated. This generalized boundary state is BRST invariant and satisfy the non-linear boundary conditions with non-constant gauge field strength. This boundary state contains divergence which is identical with the loop divergence in a superstring sigma model. Hence vanishing of the beta function in the...

  11. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  12. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    Science.gov (United States)

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10(5) Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ1, τ2 and τ3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ1, τ2 and τ3 of 0.10, 0.73 and 4.02 min, respectively).

  13. Influence of Cr and W alloying on the fiber-matrix interfacial shear strength in cast and directionally solidified sapphire NiAl composites

    Science.gov (United States)

    Asthana, R.; Tiwari, R.; Tewari, S. N.

    1995-01-01

    Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.

  14. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intra- cavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  15. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  16. Generation of 7-fs laser pulse directly from a compact Ti:sapphire laser with chirped mirrors

    Institute of Scientific and Technical Information of China (English)

    ZHAO YanYing; WANG Peng; ZHANG Wei; TIAN JinRong; WEI ZhiYi

    2007-01-01

    A compact femtosecond Ti:sapphire laser resonator consisting of three chirped mirrors and one output coupler was designed. By accurately balancing the intracavity dispersions between Ti:sapphire crystal, air and chirped mirrors, we directly generated the laser pulse shorter than 7 fs at the average power of 340 mW with 3.1 W pump. The repetition rate of the laser oscillator is 173 MHz at the centre wavelength of 791 nm, and the ultrabroaden spectrum covers from 600 nm to 1000 nm. To the best of our knowledge, this is the simplest laser resonator capable of generating sub-10 fs laser pulse.

  17. Demonstrating the feasibility of heat extraction through sapphire fibers for the GW observatory KAGRA

    CERN Document Server

    Khalaidovski, Alexander; Chen, Dan; Komma, Julius; Schwarz, Christian; Tokoku, Chihiro; Kimura, Nobuhiro; Suzuki, Toshikazu; Scheie, Alan O; Majorana, Ettore; Nawrodt, Ronny; Yamamoto, Kazuhiro

    2014-01-01

    Currently, the Japanese gravitational wave laser interferometer KAGRA is under construction in the Kamioka observatory. As one main feature, it will employ sapphire mirrors operated at a temperature of 20K to reduce the impact from thermal noise and suspended from multi-stage pendulums to reduce seismic noise. Thus the heat load deposited in the mirrors by absorption of the circulating laser light as well as originating from thermal radiation will need to be extracted through the last suspension stage. This stage will consist of four thin sapphire fibers with larger heads necessary to connect the fibers to both the mirror and the upper stage. In this paper, we discuss heat conductivity measurements on different fiber candidates. While all fibers had a diameter of 1.6mm, different surface treatments and approaches to attach the heads were analyzed. Our measurements show that fibers fulfilling the basic KAGRA heat conductivity requirement of $\\kappa\\geq\\,$5000 W/m/K at 20K are technologically feasible.

  18. Design and construction of a tunable pulsed Ti:sapphire laser

    Science.gov (United States)

    Panahi, Omid; Nazeri, Majid; Tavassoli, Seyed Hassan

    2015-02-01

    In this paper, design and constr uction of a tunable pulsed Ti:sapphire laser and numerical solution of the corresponding rate equations are reported. Rate equations for a four-level system are written and their numerical solution is examined. Furthermore, an optical setup is introduced. In this setup, a Ti:sapphire crystal is longitudinally pumped by the second harmonics of a Q-Switched Nd:YAG laser, and a prism is used as a wavelength-selective element as well. This setup is established for two 10 and 50 % transmission output couplers. In case of using the 10 % coupler, the output energy of the laser, for the pump energy of 36 mJ, is pulses with 3.5 mJ energy and for the 50 % coupler, with 50 mJ of pump energy, pulses with 10 mJ energy are generated. A wavelength tuning range of more than 160 nm is possible. The repetition rate of this laser is 10 Hz and the temporal duration of the pulses is about 30 ns.

  19. A scalable pathway to nanostructured sapphire optical fiber for evanescent-field sensing and beyond

    Science.gov (United States)

    Chen, Hui; Tian, Fei; Kanka, Jiri; Du, Henry

    2015-03-01

    We here report an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an all-alumina nanostructured sapphire optical fiber (NSOF). The strategy entails fiber coating with metal aluminum followed by anodization to form alumina cladding of highly organized pore channel structure. Through experiments and numerical simulation, we demonstrate the utility and benefit of NSOF, analogous to all-silica microstructured optical fiber, for evanescent-field surface-enhanced Raman scattering (SERS) measurements. We experimentally reveal the feasibility of Ag nanoparticles (NPs)-enabled NSOF SERS sensing of 10-6 M Rhodamine 6G (R6G) after thermal treatment at 500 °C for 6 h by taking advantage of porous anodic aluminum oxide (AAO) structure to stabilize the Ag NPs. We show, via numerical simulations, that AAO cladding significantly increases the evanescent-field overlap, lower porosity of AAO results in higher evanescent-field overlap, and optimized AAO nanostructure yields greater SERS enhancement.

  20. Tunable integrated optical filters based on sapphire microspheres and liquid crystals

    Science.gov (United States)

    Gilardi, Giovanni; Yilmaz, Hasan; Sharif Murib, Mohammed; Asquini, Rita; d'Alessandro, Antonio; Serpengüzel, Ali; Beccherelli, Romeo

    2010-05-01

    We present an integrated optical narrowband electrically tunable filter based on the whispering gallery modes of sapphire microspheres and double ion-exchanged channel BK7 glass waveguides. Tuning is provided by a liquid crystal infiltrated between the spheres and the glass substrate. By suitably choosing the radii of the spheres and of the circular apertures, upon which the spheres are positioned, arrays of different filters can be realized on the same substrate with a low cost industrial process. We evaluate the performance in terms of quality factor, mode spacing, and tuning range by comparing the numerical results obtained by the numerical finite element modeling approach and with the analytical approach of the Generalized Lorenz-Mie Theory for various design parameters. By reorienting the LC in an external electrical field, we demonstrate the tuning of the spectral response of the sapphire microsphere based filter. We find that the value of the mode spacing remains nearly unchanged for the different values of the applied electric field. An increase of the applied electric field strength, changes the refractive index of the liquid crystal, so that for a fixed geometry the mode spacing remains unchanged.

  1. The Structure of Sapphire Implanted with Carbon at Room Temperature and 1000° C

    Science.gov (United States)

    Alves, E.; Marques, C.; Safran, G.; McHargue, Carl J.

    2009-03-01

    Carbon was implanted into sapphire at various temperatures as part of a study of the different defect structures produced by a series of light ions. Implantations were made with 150 keV ions to fluences of 1×1016 and 1×1017ions/cm2 at room temperature (RT) and 1000° C. The defect structures were characterized using Rutherford backscattering-channeling (RBS-C) and transmission electron microscopy (TEM). The RBS-C spectra indicated low residual disorder for RT implantation at 1×1016 C+/cm2. The de-channeling approached the random value at 1×1017 C+/cm2 and the TEM examination revealed a buried amorphous layer containing embedded sapphire nanocrystals. Damaged layers containing planar defects generally aligned parallel to the surface surrounded this layer. The RBS-C spectra for the sample implanted at 1000° C with 1×1017C+/cm2 suggested a highly damaged but crystalline surface that was confirmed by TEM micrographs.

  2. Gold wetting effects on sapphire irradiated with GeV uranium ions

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, S.M.M. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Canut, B. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Fornazero, J. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Thevenard, P. [Universite Claude Bernard, Villeurbanne (France). Dept. de Phys. des Mater.; Toulemonde, M. [Centre Interdisciplinaire de Recherche avec les Ions Lourds (CIRIL), Boulevard A. Becquerel, 14040 Caen Cedex (France)

    1997-02-01

    Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated with {sup 238}U ions using two different energies: 3.4 MeV/u and 1.7 MeV/u. The irradiations were performed at a temperature of {approx}80 K, with fluences ranging from 1.2 x 10{sup 12} to 2.5 x 10{sup 12} ions cm{sup -2}. After irradiation, thin gold films were deposited on the sapphire surfaces by using a sputtering method. Subsequent annealing in air at a temperature of 723 and 923 K were applied to investigate the influence of the pre-damage on the adhesion of the gold layer on the sapphire surface. Rutherford backscattering analysis and scanning electron microscopy performed in both virgin and irradiated areas, show that the pre-irradiation damage inhibits the gold film of breaking up into islands after annealing. A wetting effect, which could depend on the damage morphology, is clearly observed. (orig.).

  3. Atomic fountain clock with very high frequency stability employing a pulse-tube-cryocooled sapphire oscillator.

    Science.gov (United States)

    Takamizawa, Akifumi; Yanagimachi, Shinya; Tanabe, Takehiko; Hagimoto, Ken; Hirano, Iku; Watabe, Ken-ichi; Ikegami, Takeshi; Hartnett, John G

    2014-09-01

    The frequency stability of an atomic fountain clock was significantly improved by employing an ultra-stable local oscillator and increasing the number of atoms detected after the Ramsey interrogation, resulting in a measured Allan deviation of 8.3 × 10(-14)τ(-1/2)). A cryogenic sapphire oscillator using an ultra-low-vibration pulse-tube cryocooler and cryostat, without the need for refilling with liquid helium, was applied as a local oscillator and a frequency reference. High atom number was achieved by the high power of the cooling laser beams and optical pumping to the Zeeman sublevel m(F) = 0 employed for a frequency measurement, although vapor-loaded optical molasses with the simple (001) configuration was used for the atomic fountain clock. The resulting stability is not limited by the Dick effect as it is when a BVA quartz oscillator is used as the local oscillator. The stability reached the quantum projection noise limit to within 11%. Using a combination of a cryocooled sapphire oscillator and techniques to enhance the atom number, the frequency stability of any atomic fountain clock, already established as primary frequency standard, may be improved without opening its vacuum chamber.

  4. Ultra stable and very low noise signal source using a cryocooled sapphire oscillator for VLBI

    CERN Document Server

    Nand, Nitin R; Ivanov, Eugene N; Santarelli, Giorgio

    2011-01-01

    Here we present the design and implementation of a novel frequency synthesizer based on low phase noise digital dividers and a direct digital synthesizer. The synthesis produces two low noise accurate and tunable signals at 10 MHz and 100 MHz. We report on the measured residual phase noise and frequency stability of the synthesizer, and estimate the total frequency stability, which can be expected from the synthesizer seeded with a signal near 11.2 GHz from an ultra-stable cryocooled sapphire oscillator. The synthesizer residual single sideband phase noise, at 1 Hz offset, on 10 MHz and 100 MHz signals, respectively, were measured to be -135 dBc/Hz and -130 dBc/Hz. Their intrinsic frequency stability contributions, on the 10 MHz and 100 MHz signals, respectively, were measured as sigma_y = 9 x 10^-15 and sigma_y = 2.2 x 10^-15, at 1 s integration time. The Allan Deviation of the total fractional frequency noise on the 10 MHz and 100 MHz signals derived from the synthesizer with the cryocooled sapphire oscilla...

  5. DC-powered Fe3+:sapphire Maser and its Sensitivity to Ultraviolet Light

    CERN Document Server

    Oxborrow, Mark; Kersalé, Yann; Giordano, Vincent

    2010-01-01

    The zero-field Fe3+:sapphire whispering-gallery-mode maser oscillator exhibits several alluring features: Its output is many orders of magnitude brighter than that of an active hydrogen maser and thus far less degraded by spontaneous-emission (Schawlow-Townes) and/or receiving-amplifier noise. Its oscillator loop is confined to a piece of mono-crystalline rock bolted into a metal can. Its quiet amplification combined with high resonator Q provide the ingredients for exceptionally low phase noise. We here concentrate on novelties addressing the fundamental conundrums and technical challenges that impede progress. (1) Roasting: The "mase-ability" of sapphire depends significantly on the chemical conditions under which it is grown and heat-treated. We provide some fresh details and nuances here. (2) Simplification: This paper obviates the need for a Ka-band synthesizer: it describes how a 31.3 GHz loop oscillator, operating on the preferred WG pump mode, incorporating Pound locking, was built from low-cost compo...

  6. Materials processing by use of a Ti:Sapphire laser with automatically-adjustable pulse duration

    Science.gov (United States)

    Kamata, M.; Imahoko, T.; Ozono, K.; Obara, M.

    We have developed an automatic pulsewidth-adjustable femtosecond Ti:Sapphire laser system that can generate an output of 50 fs-1 ps in duration, and sub-mJ/pulse at a repetition rate of 1 kpps. The automatic pulse compressor enables one to control the pulsewidth in the range of 50 fs-1 ps by use of a personal computer (PC). The compressor can change the distance in-between and the tilt angle of the grating pairs by use of two stepping motors and two piezo-electric transducer(PZT) driven actuators, respectively. Both are controlled by a PC. Therefore, not only control of the pulsewidth, but also of the optical chirp becomes easy. By use of this femtosecond laser system, we fabricated a waveguide in fused quartz. The numerical aperture is chosen to 0.007 to loosely focus the femtosecond laser. The fabricated waveguides are well controllable by the incident laser pulsewidth. We also demonstrated the ablation processing of hydroxyapatite (Ca10(PO4)6(OH)2), which is a key component of human tooth and human bone for orthopedics and dentistry. With pulsewidth tunable output from 50 fs through 2 ps at 1 kpps, the chemical content of calcium and phosphorus is kept unchanged before and after 50-fs-2-ps laser ablation. We also demonstrated the precise ablation processing of human tooth enamel with 2 ps Ti:Sapphire laser.

  7. Comparative pathogenicity of four strains of Aleutian disease virus for pastel and sapphire mink.

    Science.gov (United States)

    Hadlow, W J; Race, R E; Kennedy, R C

    1983-09-01

    Information was sought on the comparative pathogenicity of four North American strains (isolates) of Aleutian disease virus for royal pastel (a non-Aleutian genotype) and sapphire (an Aleutian genotype) mink. The four strains (Utah-1, Ontario [Canada], Montana, and Pullman [Washington]), all of mink origin, were inoculated intraperitoneally and intranasally in serial 10-fold dilutions. As indicated by the appearance of specific antibody (counterimmunoelectrophoresis test), all strains readily infected both color phases of mink, and all strains were equally pathogenic for sapphire mink. Not all strains, however, regularly caused Aleutian disease in pastel mink. Infection of pastel mink with the Utah-1 strain invariably led to fatal disease. Infection with the Ontario strain caused fatal disease nearly as often. The Pullman strain, by contrast, almost never caused disease in infected pastel mink. The pathogenicity of the Montana strain for this color phase was between these extremes. These findings emphasize the need to distinguish between infection and disease when mink are exposed to Aleutian disease virus. The distinction has important implications for understanding the natural history of Aleutian disease virus infection in ranch mink.

  8. Characteristics and kinetics of laser-pumped Ti:Sapphire oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Eggleston, J.M.; De Shazer, L.G.; Kangas, K.W.

    1988-06-01

    The experimental performance of a gain-switched Ti:Sapphire laser oscillator pumped by a frequency-doubled Q-switched Nd:YAG laser system is presented for a variety of operating conditions. A theoretical model developed for this oscillator predicts well its performance. In particular, the observed curved input-output energy plots for the oscillator result from the kinetics of gain switching and fluorescence decay during the gain buildup period. Fluorescence decay also produces observed oscillator thresholds higher than those normally predicted by the standard gain-equals-loss condition. Gain-switched parasitic modes, with a higher threshold but shorter roundtrip time than the resonator mode, cause the resonator mode to oscillate only over a finite range of pump energies. Also, spectroscopic investigations show that the Ti:Sapphire cross-section spectrum is well fit by a Poisson distribution, giving a peak cross section of 3 x 10/sup -19/ cm/sup 2/ for the ..pi.. polarization.

  9. A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

    Science.gov (United States)

    Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Suria, Ateeq J.; Chapin, Caitlin A.; Senesky, Debbie G.

    2016-09-01

    A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

  10. Tunable Single-Frequency Intracavity Frequency-Doubled Ti:Sapphire Laser around 461 nm

    Institute of Scientific and Technical Information of China (English)

    李凤琴; 石柱; 李永民; 彭堃墀

    2011-01-01

    We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser.The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours.The frequency stability is better than ±2.22 MHz over 10min when the laser is locked to a confocal Fabry-Perot cavity.A three-plate birefringent filter allows for the tunable range from 457nm to 467nm,which covers the absorption line of the strontium atoms(460.86nm).%We demonstrate a tunable continuous-wave single frequency intracavity frequency-doubled Ti:sapphire laser. The highest output power of 280mW at 461.62nm is obtained by employing a type-I phase-matched BIBO crystal and the peak-to-peak fluctuation of the power is less than ±1% within three hours. The frequency stability is better than ±2.22MHz over lOmin when the laser is locked to a confocal Fabry-Perot cavity. A three-plate birefringent filter allows for the tunable range from 457nm to 467 nm, which covers the absorption line of the strontium atoms (460.86 nm).

  11. Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate

    Science.gov (United States)

    Liu, Hongfei; Chi, Dongzhi

    2015-06-01

    Vapor-phase growth of large-area two-dimensional (2D) MoS2 nanosheets via reactions of sulfur with MoO3 precursors vaporized and transferred from powder sources onto a target substrate has been rapidly progressing. Recent studies revealed that the growth yield of high quality singlelayer (SL) MoS2 is essentially controlled by quite a few parameters including the temperature, the pressure, the amount/weight of loaded source precursors, and the cleanup of old precursors. Here, we report a dispersive growth method where a shadow mask is encapsulated on the substrate to ‘indirectly’ supply the source precursors onto the laterally advancing growth front at elevated temperatures. With this method, we have grown large-area (up to millimeters) SL-MoS2 nanosheets with a collective in-plane orientation on c-plane sapphire substrates. Regular ripples (~1 nm in height and ~50 nm in period) have been induced by laser scanning into the SL-MoS2 nanosheets. The MoS2 ripples easily initiate at the grain boundaries and extend along the atomic steps of the substrate. Such laser-induced ripple structures can be fundamental materials for studying their effects, which have been predicted to be significant but hitherto not evidenced, on the electronic, mechanical, and transport properties of SL-MoS2.

  12. Influence of the crucible geometry on the shape of the melt crystal interface during growth of sapphire crystal using a heat exchanger method

    Science.gov (United States)

    Chen, Jyh-Chen; Lu, Chung-Wei

    2004-05-01

    Computer simulations using the commercial code FIDAP, which is based on finite element techniques, were performed to investigate the effect of the shape of the crucible on the temperature distribution, velocity distribution and shape of the melt-crystal interface, during the application of the heat exchanger method (HEM) of growing sapphire crystals. Heat transfer from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. Cylindrical crucibles with differently curved corners at their base are considered. The curved base of the crucible decreases the convexity of the melt-crystal interface and suppresses the appearance of "hot spots". A hemispherically shaped crucible base yields the lowest maximum convexity. The variation in convexity of the melt-crystal interface is less abrupt for a cylindrical crucible with curved corners at the base than one without curved corners. The effects of the thickness and the conductivity of the crucible are also addressed. The convexity of the melt-crystal interface decreases as the thickness of the crucible wall increases. The convexity also declines as the conductivity of the crucible increases.

  13. HUD GIS Boundary Files

    Data.gov (United States)

    Department of Housing and Urban Development — The HUD GIS Boundary Files are intended to supplement boundary files available from the U.S. Census Bureau. The files are for community planners interested in...

  14. Political State Boundary (National)

    Data.gov (United States)

    Department of Transportation — State boundaries with political limit - boundaries extending into the ocean (NTAD). The TIGER/Line Files are shapefiles and related database files (.dbf) that are an...

  15. State Agency Administrative Boundaries

    Data.gov (United States)

    Kansas Data Access and Support Center — This database comprises 28 State agency boundaries and point of contact. The Kansas Geological Survey collected legal descriptions of the boundaries for various...

  16. Mingo Wilderness boundaries

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This document gives information as to the exact legal boundaries of the Mingo Wilderness area. It also includes a map showing the boundaries visually.

  17. County Political Boundaries (National)

    Data.gov (United States)

    Department of Transportation — County boundaries with political limit - boundaries extending into the ocean (NTAD 2015). The TIGER/Line shapefiles and related database files (.dbf) are an extract...

  18. Allegheny County Municipal Boundaries

    Data.gov (United States)

    Allegheny County / City of Pittsburgh / Western PA Regional Data Center — This dataset demarcates the municipal boundaries in Allegheny County. Data was created to portray the boundaries of the 130 Municipalities in Allegheny County the...

  19. Allegheny County Municipal Boundaries

    Data.gov (United States)

    Allegheny County / City of Pittsburgh / Western PA Regional Data Center — This dataset demarcates the municipal boundaries in Allegheny County. Data was created to portray the boundaries of the 130 Municipalities in Allegheny County the...

  20. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse-mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  1. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-04-01

    This report summarizes technical progress over the first six months of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on analyzing and testing factors that impact performance degradation of the initially designed sensor prototype, including sensing element movement within the sensing probe and optical signal quality degradation. Based these results, a new version of the sensing system was designed by combining the sapphire disk sensing element and the single crystal zirconia right angle light reflector into one novel single crystal sapphire right angle prism. The new sensor prototype was tested up to 1650 C.

  2. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    Science.gov (United States)

    Sun, Haiding; Wu, Feng; tahtamouni, T. M. Al; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-10-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0 0 0 1) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  3. A sapphire tube atomizer for on-line atomization and in situ collection of bismuthine for atomic absorption spectrometry

    OpenAIRE

    Musil, S. (Stanislav); Dědina, J. (Jiří)

    2013-01-01

    Sapphire was tested as a new material for volatile species atomizers and bismuthine was chosen as a convenient model for volatile species. Its performance was compared with a quartz atomizer in both modes of operation - on-line atomization versus in situ collection.

  4. The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

    Science.gov (United States)

    Huang, Jen-Ching; Weng, Yung-Jin

    2014-01-01

    This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model.

  5. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  6. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  7. Performance of Ar+-milled Ti:Sapphire rib waveguides as single transverse mode broadband fluorescence sources

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Rib waveguides have been fabricated in pulsed-laser-deposited Ti:sapphire layers using photolithographic patterning and subsequent Ar+-beam milling. Fluorescence output powers up to 300 W have been observed from the ribs following excitation by a 3-W multiline argon laser. Mode intensity profiles sh

  8. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, M.; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  9. Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; Eason, R.W.; Laversenne, L.; Moretti, P.; Borca, C.N.; Pollnau, M.

    2006-01-01

    Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near 780 nm was demonstrated at room temperature at an absorbed pump power t

  10. Ti:sapphire rib waveguides as single-transverse-mode broadband fluorescence sources for optical coherence tomography applications

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, M.; Crunteanu, A.; Jelinek, M.

    2003-01-01

    Ar+-beam-milled rib waveguides in pulsed-laser-deposited Ti:sapphire layers show broadband single transverse mode fluorescence emission at output powers up to 300 μW and propagation losses comparable to those in unstructured planar waveguide counterparts.

  11. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    Science.gov (United States)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2-CO gas atmosphere at 1923-1973 K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2-CO gas atmosphere. The thermodynamic principle of the N2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N2-CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  12. The Case against Boundaries

    Science.gov (United States)

    Borck, Howard

    1977-01-01

    In this tongue-in-cheek article, sociological boundaries are on trial in a simulated courtroom. It is argued that sociologists concerned with establishing boundaries are neglecting the significant issues facing social scientists whereas the defense contends that boundaries are essential to the discipline. (Author/JR)

  13. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

    Science.gov (United States)

    Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-08-01

    Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. The light absorption values obtained from spectrofluorometeric study were 3300000-3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000-6500000 cps for Group 2 (polycrystalline ceramic brackets) and 2700000 -3000000 cps for

  14. Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study

    Science.gov (United States)

    Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

    2016-01-01

    Introduction Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. Aim The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Materials and Methods Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. Results The light absorption values obtained from spectrofluorometeric study were 3300000–3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000–6500000 cps for Group 2

  15. Watershed Boundaries - Watershed Boundary Database for Montana

    Data.gov (United States)

    NSGIC GIS Inventory (aka Ramona) — This data set is a complete digital hydrologic unit boundary layer of the Subbasins (8-digit), Watersheds (10-digit), and Subwatersheds (12-digit) for Montana. This...

  16. Electrical and optical properties of VO2 thin films grown on various sapphire substrates by using RF sputtering deposition

    Science.gov (United States)

    Jung, Dae Ho; So, Hyeon Seob; Ko, Kun Hee; Park, Jun Woo; Lee, Hosun; Nguyen, Trang Thi Thu; Yoon, Seokhyun

    2016-12-01

    VO2 thin films were grown on a-, c-, m-, and r-plane sapphire and SiO2/Si substrates under identical conditions by using RF sputtering deposition from a VO2 target. The structural and the morphological properties of all VO2 films were investigated. The grain sizes of the VO2 films varied between 268 nm and 355 nm depending on the substrate's orientation. The electrical and the optical properties of all VO2 thin films were examined in detail. The metal-insulator transition temperature (TMI) varied with the substrate's orientation. The (200)/(bar 211 )-oriented VO2 films on the a-plane sapphire showed the lowest TMI of about 329.3 K (56.3 °C) while the (020)/(002)-VO2 films on the c-plane sapphire displayed the highest TMI of about 339.6 K (66.6 °C). The VO2 films showed reversible changes in the resistivity as large as 1.19 × 105 and a hysteresis of 2 K upon traversing the transition temperature. The variations observed in the TMI with respect to the substrate's orientation were due to changes in the lattice strain and the grain size distribution. Raman spectroscopy showed that metal (rutile) - insulator (monoclinic) transitions occurred via the M2 phase for VO2 films on the c-plane substrate rather than the direct M1 to rutile transition. The shifts in the phonon frequencies of the VO2 film grown on various sapphire substrates were explained in terms of the strain along the V-V atomic bond direction (cR). Our work shows a possible correlation between the transition parameters ( e.g., TMI, sharpness, and hysteresis width) and the width ( σ) of the grain size distribution. It also shows a possible correlation between the TMI and the resistivities at the insulating and the metallic phases for VO2 films grown on various sapphire substrates.

  17. 蓝宝石晶体的双面研磨加工%Dual-lapping process for sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    文东辉; 洪滔; 张克华; 鲁聪达

    2009-01-01

    In order to achieve high efficiency and low damaged layers during a sapphire crystal lapping process,an experimental research on the rougness,lapping uniformity and sub-surface damaged layer were studied in this paper.The sapphire with (0001) orientation was lapped by 280 mesh boron carbide abrasive grits.The effects of lapping time on the material removal rates and surface roughness were investigated,and the processing remainders by the dual-lapping were determined in accordance with the surface states of the sapphire.Then micro-surface uniformity of the sapphire was also presented by using WYKO laser equipment.Finally,a nano-indentation test was carried out to measure the depth of damaged layer according to the hardness or modulus variances.Experimental results show that the sapphire crystal can offer the R,in 0.523 μm,R,<6.0 μm,the depth of heavy damaged layer of 460 nm,and the depth of sub-surface damaged layer no more than 1 μm,after it is lapped by the abrasive with 280 mesh boron carbide grits in 120 min.%为了实现对蓝宝石晶体的高效低损伤研磨加工,对蓝宝石晶体的双面研磨加工表面粗糙度、研磨均匀性和亚表面损伤层的深度进行实验研究.采用280min的双面研磨加工后可以获得Ra为0.523 μm,Rt<6.0 μm的表面;其深度损伤层约为460 nm,亚表面损伤层<1 μm.

  18. Investigation of a direction sensitive sapphire detector stack at the 5 GeV electron beam at DESY-II

    Science.gov (United States)

    Karacheban, O.; Afanaciev, K.; Hempel, M.; Henschel, H.; Lange, W.; Leonard, J. L.; Levy, I.; Lohmann, W.; Schuwalow, S.

    2015-08-01

    Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitors at the Large Hadron Collider, FLASH or XFEL. Currently artificial diamond sensors are widely used. In this paper single crystal sapphire sensors are considered as a promising alternative. Industrially grown sapphire wafers are available in large sizes, are of low cost and, like diamond sensors, can be operated without cooling. Here we present results of an irradiation study done with sapphire sensors in a high intensity low energy electron beam. Then, a multichannel direction-sensitive sapphire detector stack is described. It comprises 8 sapphire plates of 1 cm2 size and 525 μ m thickness, metallized on both sides, and apposed to form a stack. Each second metal layer is supplied with a bias voltage, and the layers in between are connected to charge-sensitive preamplifiers. The performance of the detector was studied in a 5 GeV electron beam. The charge collection efficiency measured as a function of the bias voltage rises with the voltage, reaching about 10% at 095 V. The signal size obtained from electrons crossing the stack at this voltage is about 02200 e, where e is the unit charge. The signal size is measured as a function of the hit position, showing variations of up to 20% in the direction perpendicular to the beam and to the electric field. The measurement of the signal size as a function of the coordinate parallel to the electric field confirms the prediction that mainly electrons contribute to the signal. Also evidence for the presence of a polarisation field was observed.

  19. Preparation of Ce-doped colloidal SiO{sub 2} composite abrasives and their chemical mechanical polishing behavior on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Hong, E-mail: hong_lei2005@aliyun.com [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China); Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444 (China); Tong, Kaiyu; Wang, Zhanyong [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China)

    2016-04-01

    Chemical mechanical polishing (CMP) has become a widely accepted global planarization technology. Abrasive is one of key elements during CMP process. In order to enhance removal rate and improve surface quality of sapphire substrate, a series of novel Ce-doped colloidal SiO{sub 2} composite abrasives were prepared by chemical co-precipitation method. The CMP performances of the Ce-doped colloidal SiO{sub 2} composite abrasives on sapphire substrate were investigated by using UNIPOL-1502 polishing equipment. The analyses on the surface of polished sapphire substrate indicate that slurries containing the Ce-doped colloidal SiO{sub 2} composite abrasives exhibit lower surface roughness, higher material removal rate than that of pure colloidal SiO{sub 2} abrasive under the same testing conditions. Furthermore, the acting mechanism of the Ce-doped colloidal silica in sapphire CMP was investigated. X-ray photoelectron spectroscopy analysis shows that solid-state chemical reactions between Ce-doped silica abrasives and sapphire surface occur during CMP process, which can promote the chemical effect in CMP and lead to the improvement of material removing rate. - Highlights: • Novel Ce-doped colloidal SiO{sub 2} composite abrasives were prepared. • The chemical mechanical polishing (CMP) performances of the composite abrasives on sapphire substrate were investigated. • Novel composite abrasives show excellent polishing characteristics comparison with pure colloidal SiO{sub 2} abrasive. • We explore and report the acting mechanism of composite abrasives to sapphire CMP.

  20. A Peltier cooled single pass amplifier for Titanium:Sapphire laser pulses

    Science.gov (United States)

    Ozawa, A.; Schneider, W.; Najafi, F.; Hänsch, T. W.; Udem, Th.; Hommelhoff, P.

    2010-05-01

    We report on a Peltier cooled single pass amplifier for high repetition rate Titanium:sapphire laser pulses. Pumped with 14 W and seeded with around 400 mW, the output reaches 1.1 W with good beam quality. This amplifier is very user-friendly, easy to maintain and set up and thus represents a device situated between more complicated liquid-nitrogen cooled amplifiers that can operate at higher pump power, and very simple near to room temperature amplifiers that can only be pumped with less power. In addition, we show the results of a finite element simulation on the temperature distribution in a liquid nitrogen cooled amplifier setup designed for highest output powers.

  1. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  2. Nanosecond optical transmission studies of laser annealing in ion-implanted silicon-on-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Lee, M.C.; Lo, H.W.; Aydinli, A.; Trott, G.J.; Compaan, A. (Kansas State Univ., Manhattan (USA). Dept. of Physics); Hale, E.B. (Missouri Univ., Rolla (USA). Dept. of Physics)

    1983-06-01

    Time-resolved optical transmission has been studied using 633 and 514 nm CW probes on ion-implantation-amorphized silicon-on-sapphire during annealing by a 10 nsec, approximately 1 J/cm/sup 2/ pulse at either 532 nm or 485 nm. As recrystallization sets in the transmitted signal at 514 nm rises by approximately 10/sup 3/ in approximately 60 nsec and provides a measure of regrowth velocity. Beyond 200 nsec the much slower transmission rise is used to provide an estimate of the Si cooling rate. The difference in transmission observed between initially crystalline and initially amorphous Si provide an estimate of the latent heat of recrystallization of the amorphous phase.

  3. Nonlinear Phase Distortion in a Ti:Sapphire Optical Amplifier for Optical Stochastic Cooling

    Energy Technology Data Exchange (ETDEWEB)

    Andorf, Matthew [NICADD, DeKalb; Lebedev, Valeri [Fermilab; Piot, Philippe [NICADD, DeKalb; Ruan, Jinhao [Fermilab

    2016-06-01

    Optical Stochastic Cooling (OSC) has been considered for future high-luminosity colliders as it offers much faster cooling time in comparison to the micro-wave stochastic cooling. The OSC technique relies on collecting and amplifying a broadband optical signal from a pickup undulator and feeding the amplified signal back to the beam. It creates a corrective kick in a kicker undulator. Owing to its superb gain qualities and broadband amplification features, Titanium:Sapphire medium has been considered as a gain medium for the optical amplifier (OA) needed in the OSC*. A limiting factor for any OA used in OSC is the possibility of nonlinear phase distortions. In this paper we experimentally measure phase distortions by inserting a single-pass OA into one leg of a Mach-Zehnder interferometer. The measurement results are used to estimate the reduction of the corrective kick a particle would receive due to these phase distortions in the kicker undulator.

  4. The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III

    Science.gov (United States)

    Alexeev, P.; Asadchikov, V.; Bessas, D.; Butashin, A.; Deryabin, A.; Dill, F.-U.; Ehnes, A.; Herlitschke, M.; Hermann, R. P.; Jafari, A.; Prokhorov, I.; Roshchin, B.; Röhlsberger, R.; Schlage, K.; Sergueev, I.; Siemens, A.; Wille, H.-C.

    2016-12-01

    We report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on Mössbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with 119Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. The device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like 151Eu, 149Sm, 161Dy, 125Te and 121Sb.

  5. Nanostructured sapphire vicinal surfaces as templates for the growth of self-organized oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Thune, E., E-mail: elsa.thune@unilim.fr [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Boulle, A. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Babonneau, D.; Pailloux, F. [Laboratoire de Physique des Materiaux (PHYMAT), UMR CNRS 6630, Universite de Poitiers, Boulevard Marie et Pierre Curie - Teleport 2, BP 30179, F-86962 Futuroscope - Chasseneuil Cedex (France); Hamd, W.; Guinebretiere, R. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France)

    2009-11-15

    Vicinal substrates of sapphire with miscut angle of 10 deg. from the (0 0 1) planes towards the [1 1 0] direction have been annealed in air in the range from 1000 to 1500 deg. C. The behaviour of these surfaces has been characterized as a function of the temperature and the thermal treatment time by Atomic Force Microscopy observations. A thermal treatment at 1250 deg. C allows to stabilize a surface made of periodically spaced nanosized step-bunches. Such stepped surfaces were used as template to grow self-patterned epitaxial oxide nanoparticles by thermal annealing of yttria-stabilized zirconia thin films produced by sol-gel dip-coating. Grazing Incidence Small Angle X-ray Scattering and High-Resolution Transmission Electron Microscopy were used to study the morphology of the nanoparticles and their epitaxial relationships with the substrate.

  6. Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

    Science.gov (United States)

    Yadav, Amit; Kbashi, Hani; Kolpakov, Stanislav; Gordon, Neil; Zhou, Kaiming; Rafailov, Edik U.

    2017-05-01

    The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green-violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as "stealth dicing". The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

  7. Cryogenic Sapphire Oscillator using a low-vibration design pulse-tube cryocooler: First results

    CERN Document Server

    Hartnett, John G; Wang, Chao; Floch, Jean-Michel Le

    2010-01-01

    A Cryogenic Sapphire Oscillator has been implemented at 11.2 GHz using a low-vibration design pulse-tube cryocooler. Compared with a state-of-the-art liquid helium cooled CSO in the same laboratory, the square root Allan variance of their combined fractional frequency instability is $\\sigma_y = 1.4 \\times 10^{-15}\\tau^{-1/2}$ for integration times $1 < \\tau < 10$ s, dominated by white frequency noise. The minimum $\\sigma_y = 5.3 \\times 10^{-16}$ for the two oscillators was reached at $\\tau = 20$ s. Assuming equal contributions from both CSOs, the single oscillator phase noise $S_{\\phi} \\approx -96 \\; dB \\; rad^2/Hz$ at 1 Hz offset from the carrier.

  8. Cryogenic sapphire oscillator using a low-vibration design pulse-tube cryocooler: first results.

    Science.gov (United States)

    Hartnett, John; Nand, Nitin; Wang, Chao; Floch, Jean-Michel

    2010-05-01

    A cryogenic sapphire oscillator (CSO) has been implemented at 11.2 GHz using a low-vibration design pulsetube cryocooler. Compared with a state-of-the-art liquid helium cooled CSO in the same laboratory, the square root Allan variance of their combined fractional frequency instability is sigma(y) = 1.4 x 10(-15)tau(-1/2) for integration times 1 < tau < 10 s, dominated by white frequency noise. The minimum sigmay = 5.3 x 10(-16) for the two oscillators was reached at tau = 20 s. Assuming equal contributions from both CSOs, the single oscillator phase noise S(phi) approximately -96 dB x rad(2)/Hz at 1 Hz set from the carrier.

  9. All-solid-state narrow-linewidth 455-nm blue laser based on Ti: sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    Shankui Rong; Xiaolei Zhu; Weibiao Chen

    2009-01-01

    A compact, all-solid-state, narrow-linewidth, pulsed 455-nm blue laser based on Ti:sapphire crystal is developed. Pumped by a 10-Hz, frequency-doubled all-solid-state Nd:YAG laser and injection-seeded by an external cavity laser diode, the narrow-linewidth 910-nm laser with pulse width of 20 ns is obtained from a Tirsapphire laser. 3.43-mJ blue laser can be obtained from the laser system by frequency-doubling with BBO crystal. This research is very useful to determine the roadmap of developing the practical, high power blue laser. This kind of laser will have potential application for underwater communication.

  10. Containerless laser-induced fluorescence study of vaporization and optical properties for sapphire and alumina

    Energy Technology Data Exchange (ETDEWEB)

    Nordine, P.C.; Schiffman, R.A. (Midwest Research Institute, Kansas City, MO (USA) Yale Univ., New Haven, CT (USA))

    1988-09-01

    Evaporation of aluminum oxide was studied from 1,800 to 2,327 K by laser-induced fluorescence (LIF) detection of Al atom vapor over sapphire and alumina spheres that were levitated in an argon gas jet and heated with a continuous wave CO{sub 2} laser. Optical properties were determined from apparent specimen temperatures measured with an optical pyrometer and true temperatures deduced from the LIF intensity versus temperature measurements using the known temperature dependence of the Al atom vapor concentration in equilibrium with Al{sub 2}O{sub 3}. The effects of impurities and dissolved oxygen on the high-temperature optical properties of aluminum oxide were discussed.

  11. Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Xu, S.R., E-mail: shengruixidian@126.com [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Li, P.X. [School of Technical Physics, Xidian University, Xi’an 710071 (China); Zhang, J.C.; Jiang, T. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Ma, J.J. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); School of Technical Physics, Xidian University, Xi’an 710071 (China); Lin, Z.Y.; Hao, Y. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China)

    2014-11-25

    Highlights: • The LED structure on PSS was grown by MOCVD. • The distribution of defects in GaN film grown on PSS was investigated by TEM. • The main mechanism of TDs reducing on PSS was revealed. - Abstract: The microstructure of an epilayer structure for the blue light-emitting diode grown on a cone patterned sapphire substrate was characterized by high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy (TEM). Cross-sectional TEM revealed that most of the dislocations, which originated from planar region, propagated laterally toward the cone region during the lateral growth process. This change of the propagation direction prevented the dislocations from penetrate the epitaxy film and thus principally led to a drastic reduction in the threading dislocation density in GaN films. Particularly, we proposed that the six {11"‾01} semipolar facets play a very important role during the bending process.

  12. Test of Lorentz Invariance in Electrodynamics Using Rotating Cryogenic Sapphire Microwave Oscillators

    CERN Document Server

    Stanwix, P L; Wolf, P; Susli, M; Locke, C R; Ivanov, E N; Winterflood, J; Van Kann, F; Stanwix, Paul L.; Tobar, Michael E.; Wolf, Peter; Susli, Mohamad; Locke, Clayton R.; Ivanov, Eugene N.; Winterflood, John; Kann, Frank van

    2005-01-01

    We present the first results from a rotating Michelson-Morley experiment that uses two orthogonally orientated cryogenic sapphire resonator-oscillators operating in whispering gallery modes near 10 GHz. The experiment is used to test for violations of Lorentz Invariance in the frame-work of the photon sector of the Standard Model Extension (SME), as well as the isotropy term of the Robertson-Mansouri-Sexl (RMS) framework. In the SME we set a new bound on the previously unmeasured kappa_{e-}^{ZZ} component of 2.1(5.7)x10^{-14}, and set more stringent bounds by up to a factor of 7 on seven other components. In the RMS a more stringent bound of -2.6(2.1)x10^{-10} on the isotropy parameter, P_{MM}= delta - beta + 1/2 is set, which is a factor of 7 improvement.

  13. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

    Institute of Scientific and Technical Information of China (English)

    Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

    2012-01-01

    The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail.The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor,resulting in a higher internal quantum efficiency (IQE).Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases.The illumination output power of the LED is affected by both θ and f.It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f.

  14. A 10-Hz Terawatt Class Ti:Sapphire Laser System: Development and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, A.K.; Smedley, J.; Tsang, T.; Rao, T.

    2010-01-12

    We developed a two stage Ti:Sapphire laser system to generate 16 mJ/80fs laser pulses at the pulse repetition rate of 10 Hz. The key deriver for the present design is implementing a highly efficient symmetric confocal pre-amplifier and employing a simple, inexpensive synchronization scheme relying only on a commercial digital delay-generator. We characterized the amplified pulses in spatial-, spectral-, and temporal-domains. The laser system was used to investigate various nonlinear optical processes, and to modify the optical properties of metal- and semiconductor-surfaces. We are currently building a third amplifier to boost the laser power to the multi-terawatt range.

  15. A High Power and High Repetition Rate Modelocked Ti-Sapphire Laser for Photoinjectors

    Energy Technology Data Exchange (ETDEWEB)

    J. Hansknecht; M. Poelker

    2001-07-01

    A high power cw mode-locked Ti-sapphire laser has been constructed to drive the Jefferson Lab polarized photoinjector and provide > 500 mW average power with 50 ps pulsewidths at 499 MHz or 1497 MHz pulse repetition rates. This laser allows efficient, high current synchronous photoinjection for extended periods of time before intrusive steps must be taken to restore the quantum efficiency of the strained layer GaAs photocathode. The use of this laser has greatly enhanced the maximum high polarization beam current capability and operating lifetime of the Jefferson Lab photoinjector compared with previous performance using diode laser systems. A novel modelocking technique provides a simple means to phase-lock the optical pulse train of the laser to the accelerator and allows for operation at higher pulse repetition rates to {approx} 3 GHz without modification of the laser cavity. The laser design and characteristics are described below.

  16. Intra-cavity gain shaping of mode-locked Ti:Sapphire laser oscillations

    CERN Document Server

    Yefet, Shai; Pe'er, Avi

    2015-01-01

    The gain properties of an oscillator strongly affect its behavior. When the gain is homogeneous, different modes compete for gain resources in a `winner takes all' manner, whereas with inhomogeneous gain, modes can coexist if they utilize different gain resources. We demonstrate precise control over the mode competition in a mode locked Ti:sapphire oscillator by manipulation and spectral shaping of the gain properties, thus steering the competition towards a desired, otherwise inaccessible, oscillation. Specifically, by adding a small amount of spectrally shaped inhomogeneous gain to the standard homogeneous gain oscillator, we selectively enhance a desired two-color oscillation, which is inherently unstable to mode competition and could not exist in a purely homogeneous gain oscillator. By tuning the parameters of the additional inhomogeneous gain we flexibly control the center wavelengths, relative intensities and widths of the two colors.

  17. Layering of [BMIM]+-based ionic liquids at a charged sapphire interface.

    Science.gov (United States)

    Mezger, Markus; Schramm, Sebastian; Schröder, Heiko; Reichert, Harald; Deutsch, Moshe; De Souza, Emerson J; Okasinski, John S; Ocko, Benjamin M; Honkimäki, Veijo; Dosch, Helmut

    2009-09-07

    The structure of two model room temperature ionic liquids, [BMIM](+)[PF(6)](-) and [BMIM](+)[BF(4)](-), near the solid/liquid interface with charged Al(2)O(3)(0001) (sapphire) was determined with subnanometer resolution by high energy (72.5 keV) x-ray reflectivity. [BMIM](+)[PF(6)](-) exhibits alternately charged, exponentially decaying, near-surface layering. By contrast, the smaller-anion compound, [BMIM](+)[BF(4)](-), shows only a single layer of enhanced electron density at the interface. The different layering behaviors, and their characteristic length scales, correspond well to the different bulk diffraction patterns, also measured in this study. Complementary measurements of the surface and interface energies showed no significant different between the two RTILs. The combined bulk-interface results support the conclusion that the interfacial ordering is dominated by the same electrostatic ion-ion interactions dominating the bulk correlations, with hydrogen bonding and dispersion interactions playing only a minor role.

  18. Narrow linewidth operation of the RILIS titanium: Sapphire laser at ISOLDE/CERN

    CERN Document Server

    Rothe, S; Wendt, K D A; Fedosseev, V N; Kron, T; Marsh, B A

    2013-01-01

    A narrow linewidth operating mode for the Ti:sapphire laser of the CERN ISOLDE Resonance Ionization Laser Ion Source (RILIS) has been developed. This satisfies the laser requirements for the programme of in-source resonance ionization spectroscopy measurements and improves the selectivity for isomer separation using RILIS. A linewidth reduction from typically 10 GHz down to 1 GHz was achieved by the intra-cavity insertion of a second (thick) Fabry-Perot etalon. Reliable operation during a laser scan was achieved through motorized control of the tilt angle of each etalon. A scanning, stabilization and mode cleaning procedure was developed and implemented in LabVIEW. The narrow linewidth operation was confirmed in a high resolution spectroscopy study of francium isotopes by the Collinear Resonance Ionization Spectroscopy experiment. The resulting laser scans demonstrate the suitability of the laser, in terms of linewidth, spectral purity and stability for high resolution in-source spectroscopy and isomer select...

  19. Single-crystal Sapphire Based Optical Polarimetric Sensor for High Temperature Measurement

    Directory of Open Access Journals (Sweden)

    Anbo Wang

    2006-08-01

    Full Text Available Optical sensors have been investigated and widely deployed in industrial andscientific measurement and control processes, mainly due to their accuracy, high sensitivityand immunity to electromagnetic interference and other unique characteristics. They areespecially suited for harsh environments applications, where no commercial electricalsensors are available for long-term stable operations. This paper reports a novel contactoptical high temperature sensor targeting at harsh environments. Utilizing birefringentsingle crystal sapphire as the sensing element and white light interferometric signalprocessing techniques, an optical birefringence based temperature sensor was developed.With a simple mechanically structured sensing probe, and an optical spectrum-codedinterferometric signal processor, it has been tested to measure temperature up to 1600 °Cwith high accuracy, high resolution, and long-term measurement stability.

  20. Anomalous Surface Deformation of Sapphire Clarified by 3D-FEM Simulation of the Nanoindentation

    Science.gov (United States)

    Nowak, Roman; Manninen, Timo; Li, Chunliang; Heiskanen, Kari; Hannula, Simo-Pekka; Lindroos, Veikko; Soga, Tetsuo; Yoshida, Fusahito

    This work clarifies the origin of anomalous surface deformation reflected by peculiar surface patterns around indentation impressions on various crystallographic planes of sapphire. The three-dimensional finite element simulation (3D-FEM) of nanoindentation in Al2O3 crystal allowed the authors to localize the regions in which various kinds of twinning and slip are most prone to be activated. The work provides a novel approach to the “hardness anisotropy”, which was modeled so far using a modified uniaxial-stress approximation of this essentially 3D, non-isotropic contact problem. The calculated results enabled the authors to unravel the asymmetric surface deformation detected on prismatic planes by the high-resolution microscopy, which cannot be explained using simple crystallographic considerations.

  1. LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES

    Institute of Scientific and Technical Information of China (English)

    J. Xu; R. Zhang; Y.P. Wang; X.Q. Xiu; S.L. Gu; B. Shen; Y. Shi; Z.G. Liu; Y.D. Zheng

    2001-01-01

    Gallium Nitride film was successfully separated from sapphire substrate by laser radi-ation. The absorption of the 248nm radiation by the GaN at the interface results inrapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas.The substrate can be easily removed by heating above the Ga melting point (29℃).X-ray diffraction, atomic force microscopy and Photoluminescence of GaN before andafter lift-off process have been performed, which demonstrated that the separation andtransfer process do not alter the structural quality of the GaN films. And further dis-cussions on the threshold energy and crack-free strategies of laser lift-off process havealso been presented.

  2. Cryo-Cooled Sapphire Oscillator for the Cassini Ka-Band Experiment

    Science.gov (United States)

    Wang, Rabi T.; Dick, G. John

    1997-01-01

    We present features for an ultra-stable sapphire cryogenic oscillator which has been designed to support the Cassini Ka-band Radio Science experiment. The design of this standard is new in several respects. It is cooled by a commercial cryocooler instead of liquid cryogens to increase operating time, and it uses a technology to adjust the temperature turn-over point to extend the upper operating temperature limit and to enable construction of multiple units with uniform operating characteristics. Objectives are 3 x 10(exp -15) stability for measuring times 1 second less than or equal to (tau) less than or equal to 100 seconds, phase noise of -85 dBc/Hz from offset frequencies of 1 Hz to 1000 Hz at 10 GHz carrier frequency, and a one year continuous operating period.

  3. Design of a Cryocooled Sapphire Oscillator for the Cassini Ka-Band Experiment

    Science.gov (United States)

    Dick, G. J.; Wang, R. T.

    1998-04-01

    We present design aspects of a cryogenic sapphire oscillator that is being developed for ultra-high short-term stability and low phase noise in support of the Cassini Ka-band (32-GHz) radio science experiment. With cooling provided by a commercial cryocooler instead of liquid helium, this standard is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3 x 10^(-15) (1 second ≤ τ ≤ 100 seconds) and a phase noise of -73 dBc/Hz at 1 Hz measured at 34 GHz. Test results are reported for several subsystems, including the cryocooler, vibration isolation system, and ruby compensating element.

  4. Advances in Trace Element “Fingerprinting” of Gem Corundum, Ruby and Sapphire, Mogok Area, Myanmar

    Directory of Open Access Journals (Sweden)

    F. Lin Sutherland

    2014-12-01

    Full Text Available Mogok gem corundum samples from twelve localities were analyzed for trace element signatures (LA-ICP-MS method and oxygen isotope values (δ18O, by laser fluorination. The study augmented earlier findings on Mogok gem suites that suggested the Mogok tract forms a high vanadium gem corundum area and also identified rare alluvial ruby and sapphire grains characterised by unusually high silicon, calcium and gallium, presence of noticeable boron, tin and niobium and very low iron, titanium and magnesium contents. Oxygen isotope values (δ18O for the ruby and high Si-Ca-Ga corundum (20‰–25‰ and for sapphire (10‰–20‰ indicate typical crustal values, with values >20‰ being typical of carbonate genesis. The high Si-Ca-Ga ruby has high chromium (up to 3.2 wt % Cr and gallium (up to 0. 08 wt % Ga compared to most Mogok ruby (<2 wt % Cr; <0.02 wt % Ga. In trace element ratio plots the Si-Ca-Ga-rich corundum falls into separate fields from the typical Mogok metamorphic fields. The high Ga/Mg ratios (46–521 lie well within the magmatic range (>6, and with other features suggest a potential skarn-like, carbonate-related genesis with a high degree of magmatic fluid input The overall trace element results widen the range of different signatures identified within Mogok gem corundum suites and indicate complex genesis. The expanded geochemical platform, related to a variety of metamorphic, metasomatic and magmatic sources, now provides a wider base for geographic typing of Mogok gem corundum suites. It allows more detailed comparisons with suites from other deposits and will assist identification of Mogok gem corundum sources used in jewelry.

  5. Two Wavelength Ti:sapphire Laser for Ozone DIAL Measurements from Aircraft

    Science.gov (United States)

    Situ, Wen; DeYoung, Russel J.

    1998-01-01

    Laser remote sensing of ozone from aircraft has proven to be a valuable technique for understanding the distribution and dynamics of ozone in the atmosphere. Presently the differential absorption lidar (DIAL) technique, using dual ND:YAG lasers that are doubled to pump dye lasers which in turn are doubled into the UV for the "on" and "off' line lasers, is used on either the NASA DC-8 or P-3 aircraft. Typically, the laser output for each line is 40-mJ and this is split into two beams, one looking up and the other downward, each beam having about 20-mJ. The residual ND:YAG (1.06 micron) and dye laser energies are also transmitted to obtain information on the atmospheric aerosols. While this system has operated well, there are several system characteristics that make the system less than ideal for aircraft operations. The system, which uses separate "on" and "off" line lasers, is quite large and massive requiring valuable aircraft volume and weight. The dye slowly degrades with time requiring replacement. The laser complexity requires a number of technical people to maintain the system performance. There is also the future interest in deploying an ozone DIAL system in an Unpiloted Atmospheric Vehicle (UAV) which would require a total payload mass of less than 150 kg and power requirement of less than 1500 W. A laser technology has emerged that could potentially provide significant enhancements over the present ozone DIAL system. The flashlamp pumped Ti:sapphire laser system is an emerging technology that could reduce the mass and volume over the present system and also provide a system with fewer conversion steps, reducing system complexity. This paper will discuss preliminary results from a flashlamp-pumped Ti:sapphire laser constructed as a radiation source for a UV DIAL system to measure ozone.

  6. YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

    Science.gov (United States)

    Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

    1996-01-01

    Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

  7. Grain boundary tunnel spectroscopy of the electron-doped cuprate superconductor La{sub 2-x}Ce{sub x}CuO{sub 4}; Korngrenzen-Tunnelspektroskopie am elektronendotierten Kupratsupraleiter La{sub 2-x}Ce{sub x}CuO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Wagenknecht, Michael

    2008-07-01

    The electron doped superconductor La{sub 2-x}Ce{sub x}CuO{sub 4} (LCCO) has been investigated by electric transport measurements at low temperatures T down to 5 K and high magnetic fields up to 16 T. For this purpose LCCO thin film tunnel junctions have been prepared on bicrystal substrates by molecular beam epitaxy and micro structuring. The samples were characterised by measuring the thin film resistivity and the tunnel conductance of quasi particles across the grain boundary. By these measurements an unconventional symmetry of the order parameter could be revealed for La{sub 2-x}Ce{sub x}CuO{sub 4}. Furthermore it was shown, that the tunnel conductance can be used as a probe for the upper critical field B{sub c2}(T). By using this method a value of B{sub c2}{proportional_to}24 T has been found for La{sub 2-x}Ce{sub x}CuO{sub 4}, a value roughly three times bigger than previously known. By this observation it was shown that the superconducting phase covers a larger region in the B-T-phase diagram. In addition it was concluded, that the pseudogap phase in La{sub 2-x}Ce{sub x}CuO{sub 4} is either not existent at all or covers only a small temperature region. Besides quasiparticle tunneling also the tunneling of Cooper pairs in small magnetic fields has been investigated. It was shown that the critical current across the grain boundary depends on the supplier of the bicrystal substrate. (orig.)

  8. Characterizations of boundary pluripolar hulls

    NARCIS (Netherlands)

    Djire, I.K.; Wiegerinck, J.

    2016-01-01

    We present some basic properties of the so-called boundary relative extremal function and discuss boundary pluripolar sets and boundary pluripolar hulls. We show that for B-regular domains the boundary pluripolar hull is always trivial on the boundary of the domain and present a “boundary version” o

  9. Characterizations of boundary pluripolar hulls

    NARCIS (Netherlands)

    Djire, I.K.; Wiegerinck, J.

    2016-01-01

    We present some basic properties of the so-called boundary relative extremal function and discuss boundary pluripolar sets and boundary pluripolar hulls. We show that for B-regular domains the boundary pluripolar hull is always trivial on the boundary of the domain and present a “boundary version” o

  10. BoundaryOther_BNDHASH

    Data.gov (United States)

    Vermont Center for Geographic Information — The BNDHASH dataset depicts Vermont villages, towns, counties, Regional Planning Commissions (RPC), and LEPC (Local Emergency Planning Committee) boundaries. It is a...

  11. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  12. Rayleigh scattering in sapphire test mass for laser interferometric gravitational-wave detectors:. II: Rayleigh scattering induced noise in a laser interferometric-wave detector

    Science.gov (United States)

    Benabid, F.; Notcutt, M.; Ju, L.; Blair, D. G.

    1999-10-01

    We present the level of noise induced by Rayleigh-scattered light from sapphire test mass, the limit of scattering loss on build-up power inside the interferometer and finally the tolerable absorption loss in order to meet the specification of the interferometer sensitivity. The results show that the Rayleigh scattering induced noise remains below h˜10 -25 Hz -1/2 and a higher tolerance on the absorption level in sapphire substrate compared with silica substrate.

  13. Characteristics of a Ti:sapphire laser pumped by a Nd:YAG laser and its analysis. Nd:YAG laser reiki Ti:sapphire laser no dosa tokusei to sono kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Okada, T.; Masumoto, J.; Mizunami, T.; Maeda, M.; Muraoka, K. (Kyushu Univ., Fukuoka (Japan). Faculty of Engineering)

    1991-06-29

    Although Ti: Sapphire expects of a possibility of being a light source much superior to a dye laser having been used as a wavelength variable laser for spectral analyses, it has a limitation that it does not oscillate directly in the visible and ultraviolet regions. In order to develop a light source that is synchronizable over ultraviolet-near infrared regions, by means of combining a Ti: Sapphire laser of a high peak power, comprising an oscillator and a multistage amplifier, with a non-linear frequency conversion method for harmonic generation and Raman conversion, a prototype Ti:Sapphire laser that is excited by YAG laser second harmonic, and that synchronizes with a prism was fabricated, and its operational characteristics were investigated. As a result, an output energy of 35.6 mJ at a maximum was obtained at a wavelength of 773 nm against an excitation energy of 129 mJ, a conversion efficiency of 38.2% was obtained against the absorption energy of the crystals, and a continuous synchronism was achieved over 750 to 900 nm. 4 refs., 9 figs., 1 tab.

  14. Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

    Science.gov (United States)

    Ali, M.; Svensk, O.; Riuttanen, L.; Kruse, M.; Suihkonen, S.; Romanov, A. E.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2012-08-01

    We present near-UV GaN light-emitting diodes (LEDs) grown on patterned GaN/sapphire templates with improved material quality and light extraction efficiency. Enhancement of light extraction efficiency is attributed to voids generated at the GaN/sapphire interface. The sidewall inclination angle of the voids can be controlled from nearly vertical (˜ 85°) to fully inclined (˜ 60°) by changing the initial patterning dimensions. Light extraction efficiency and material quality improve with a decreasing void sidewall angle. A 20% increase in the light output is observed at 20 mA of input current for LED structures with ˜60° inclined sidewall voids.

  15. Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

    Science.gov (United States)

    Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

    2016-11-01

    Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

  16. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

    Science.gov (United States)

    Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

    2013-08-23

    Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

  17. Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The orientation of the nano-columnar ZnO films grown on sapphire using the technique of metal-organic chemical vapor deposition (MOCVD) exhibits deviation because of the mismatch between the crystal lattices of the films and the sapphire substrate. A high-throughout X-ray diffraction method was employed to determine the crystal orientation of the ZnO films at a time scale of the order of minutes based on the general area detection diffraction system (GADDS). This rapid, effective, and ready method, adapted for characterizing the orientation of the nano-columnar crystals is used to directly explain the results of observation of the X-ray diffraction images, by the measurements of the orientations of the crystal columns of the ZnO films along c-axis and in parallel to ab plane.

  18. High Q-factor Sapphire Whispering Gallery Mode Microwave Resonator at Single Photon Energies and milli-Kelvin Temperatures

    CERN Document Server

    Creedon, Daniel L; Farr, Warrick; Martinis, John M; Duty, Timothy L; Tobar, Michael E

    2011-01-01

    The microwave properties of a crystalline sapphire dielectric whispering gallery mode resonator have been measured at very low excitation strength (E/hf=1) and low temperatures (T = 30 mK). The measurements were sensitive enough to observe saturation due to a highly detuned electron spin resonance, which limited the loss tangent of the material to about 2e-8 measured at 13.868 and 13.259 GHz. Small power dependent frequency shifts were also measured which correspond to an added magnetic susceptibility of order 1e-9. This work shows that quantum limited microwave resonators with Q-factors > 1e8 are possible with the implementation of a sapphire whispering gallery mode system.

  19. Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides

    KAUST Repository

    Ly, Thuchue

    2014-11-25

    Two-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries. (Figure Presented).

  20. Generalized Supersymetric Boundary State

    CERN Document Server

    Hashimoto, K

    2000-01-01

    Following our previous paper (hep-th/9909027), we generalize a supersymmetric boundary state so that arbitrary configuration of the gauge field coupled to the boundary of the worldsheet is incorpolated. This generalized boundary state is BRST invariant and satisfy the non-linear boundary conditions with non-constant gauge field strength. This boundary state contains divergence which is identical with the loop divergence in a superstring sigma model. Hence vanishing of the beta function in the superstring sigma model corresponds to a well-defined boundary state with no divergence. The coupling of a single closed superstring massless mode with multiple open string massless modes is encoded in the boundary state, and we confirm that derivative correction to the D-brane action in this sector vanishes up to the first non-trivial order O(alpha'(derivative)^2). Combining T-dualities, we incorpolate also general configurations of the scalar fields on the D-brane, and construct boundary states representing branes stuc...

  1. High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

    Science.gov (United States)

    Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

    2004-01-01

    System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced

  2. Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

    Institute of Scientific and Technical Information of China (English)

    KANG Chao-Yang; TANG Jun; LIU Zhong-Liang; LI Li-Min; YAN Wen-Sheng; WEI Shi-Qiang; XU Peng-Shou

    2011-01-01

    Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber.The reflection high energy diffraction,Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample,which confirm the formation of graphene layers.The mean domain size of FLG is around 29.2 nm and the layer number is about 2-3.The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated a-SiC surface.Graphene,a monolayer of sp2-bonded carbon atoms,is a quasi two-dimensional (2D) material.It has attracted great interest because of its distinctive band structure and physical properties.[1] Graphene can now be obtained by several different approaches including micromechanical[1] and chemical[2] exfoliation of graphite,epitaxial growth on hexagonal SiC substrates by Si sublimation in vacuum,[3] and CVD growth on metal substrates.[4] However,these preparation methods need special substrates,otherwise,in order to design microelectronic devices,the prepared graphene should be transferred to other appropriate substrates.Thus the growth of graphene on the suitable substrates is motivated.%Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample, which confirm the formation of graphene layers. The mean domain size of FLG is around 29.2nm and the layer number is about 2-3. The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated α-SiC surface.

  3. TER-XSW investigation of CoPt{sub 3} nanoparticle films on Si and sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zargham, Ardalan; Schmidt, Thomas; Hildebrand, Radowan; Falta, Jens [Institute of Solid State Physics, University of Bremen (Germany); Gehl, Bernhard; Baeumer, Marcus [Institute of Physical Chemistry, University of Bremen (Germany)

    2008-07-01

    CoPt{sub 3} bimetallic colloidal nanoparticle films on Si and sapphire substrates are investigated concerning the real space distribution of Co and Pt in specifically defined layers above the substrates as well as the structural dependancy on plasma treatments. TER-XSW is considered to be a suitable method for these types of investigation because of its ability of material specification in vertical resolution. It is simultaneously possible to understand the surface morphology by means of XRR.

  4. Self-starting mode-locked picosecond Ti:sapphire laser by using of a fast SESAM

    Institute of Scientific and Technical Information of China (English)

    Zhu Jiang-Feng; Tian Jin-Rong; Wang Peng; Ling Wei-Jun; Li De-Hua; Wei Zhi-Yi

    2006-01-01

    A stable continuous wave mode-locked picosecond Ti:sapphire laser by using a fast semiconductor saturable absorber mirror (SESAM) is demonstrated. The laser delivers pulse width of 20 ps at a central wavelength of 813 nm and a repetition rate of 100 MHz. The maximum output power is 1.34 W with pump power of 7 W which corresponds to an optical-optical conversion efficiency of 19.1%.

  5. High energy femtosecond mid-infrared generation pumped by a two-color Ti:sapphire multipass amplifier

    Institute of Scientific and Technical Information of China (English)

    XIA JiangFan; SONG Jie; Donna T. Strickland

    2008-01-01

    Intense mid-infrared was generated by direct frequency mixing two pulses from a dual-wavelength Ti:sapphire system. From a multipass amplifier we generated two tunable wavelength femtosecond pulses with a total energy of 15 mJ. Pulse energy of 1.6 μJ and 7.4 μJ of mid-infrared light is achieved with and without its multipass amplifier at 9-11 μm, with pulse duration of 500 fs.

  6. Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Hai [Clemson Univ., SC (United States); Tsai, Hai-Lung [Missouri Univ. of Science and Technology, Rolla, MO (United States); Dong, Junhang [Univ. of Cincinnati, OH (United States)

    2014-09-30

    This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologies that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.

  7. Changing of micromorphology of silicon-on-sapphire epitaxial layer surface at irradiation by subthreshold energy X-radiation

    CERN Document Server

    Kiselev, A N; Skupov, V D; Filatov, D O

    2001-01-01

    The morphology of silicon-on-sapphire epitaxial layer surface after pulse irradiation by the X-rays with the energy of <= 140 keV is studied. The study on the irradiated material surface is carried out by the methods of the atomic force microscopy and ellipsometry. The average roughness value after irradiation constitutes 7 nm. The change in the films surface microrelief occurs due to reconstruction of their dislocation structure under the action of elastic waves, originating in the X radiation

  8. Renormalized Volumes with Boundary

    CERN Document Server

    Gover, A Rod

    2016-01-01

    We develop a general regulated volume expansion for the volume of a manifold with boundary whose measure is suitably singular along a separating hypersurface. The expansion is shown to have a regulator independent anomaly term and a renormalized volume term given by the primitive of an associated anomaly operator. These results apply to a wide range of structures. We detail applications in the setting of measures derived from a conformally singular metric. In particular, we show that the anomaly generates invariant (Q-curvature, transgression)-type pairs for hypersurfaces with boundary. For the special case of anomalies coming from the volume enclosed by a minimal hypersurface ending on the boundary of a Poincare--Einstein structure, this result recovers Branson's Q-curvature and corresponding transgression. When the singular metric solves a boundary version of the constant scalar curvature Yamabe problem, the anomaly gives generalized Willmore energy functionals for hypersurfaces with boundary. Our approach ...

  9. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  10. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-11-01

    This report summarizes technical progress over the second six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on evaluating corrosion effects in single crystal sapphire at temperatures up to 1400 C, and designing the sensor mechanical packaging with input from Wabash River Power Plant. Upcoming meetings will establish details for the gasifier field test.

  11. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    Science.gov (United States)

    Park, Junsu; Sin, Young-Gwan; Kim, Jae-Hyun; Kim, Jaegu

    2016-10-01

    Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  12. The sub-micron hole array in sapphire produced by inductively-coupled plasma reactive ion etching.

    Science.gov (United States)

    Shiao, Ming-Hua; Chang, Chun-Ming; Huang, Su-Wei; Lee, Chao-Te; Wu, Tzung-Chen; Hsueh, Wen-Jeng; Ma, Kung-Jeng; Chiang, Donyau

    2012-02-01

    The sub-micron hole array in a sapphire substrate was fabricated by using nanosphere lithography (NSL) combined with inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. Polystyrene nanospheres of about 600 nm diameter were self-assembled on c-plane sapphire substrates by the spin-coating method. The diameter of polystyrene nanosphere was modified by using oxygen plasma in ICP-RIE system. The size of nanosphere modified by oxygen plasma was varied from 550 to 450 nm with different etching times from 15 to 35 s. The chromium thin film of 100 nm thick was then deposited on the shrunk nanospheres on the substrate by electron-beam evaporation system. The honeycomb type chromium mask can be obtained on the sapphire substrate after the polystyrene nanospheres were removed. The substrate was further etched in two sets of chlorine/Argon and boron trichloride/Argon mixture gases at constant pressure of 50 mTorr in ICP-RIE processes. The 400 nm hole array in diameter can be successfully produced under suitable boron trichloride/Argon gas flow ratio.

  13. Three-dimensional structuring of sapphire by sequential He sup + ion-beam implantation and wet chemical etching

    CERN Document Server

    Crunteanu, A; Hoffmann, P; Pollnau, M; Buchal, C; Petraru, A; Eason, R W; Shepherd, D P

    2003-01-01

    We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 mu m and subsequent selective wet chemical etching of the damaged regions by hot H sub 3 PO sub 4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1 x 10 sup 1 sup 6 to 5 x 10 sup 1 sup 7 He sup + /cm sup 2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. (orig.)

  14. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  15. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  16. Characterization of local hydrophobicity on sapphire (0001) surfaces in aqueous environment by colloidal probe atomic force microscopy

    Science.gov (United States)

    Wada, Tomoya; Yamazaki, Kenji; Isono, Toshinari; Ogino, Toshio

    2017-02-01

    Sapphire (0001) surfaces exhibit a phase-separation into hydrophobic and hydrophilic domains upon high-temperature annealing, which were previously distinguished by the thickness of adsorbed water layers in air using atomic force microscopy (AFM). To characterize their local surface hydrophobicity in aqueous environment, we used AFM equipped with a colloidal probe and measured the local adhesive force between each sapphire domain and a hydrophilic SiO2 probe surface, or a hydrophobic polystyrene one. Two data acquisition modes for statistical analyses were used: one is force measurements at different positions of the surface and the other repeated measurement at a fixed position. We found that adhesive force measurements using the polystyrene probe allow us to distinctly separate the hydrophilic and hydrophobic domains. The dispersion in the force measurement data at different positions of the surface is larger than that in the repeated measurements at a fixed position. It indicates that the adhesive force measurement is repeatable although their data dispersion for the measurement positions is relatively large. From these results, we can conclude that the hydrophilic and hydrophobic domains on the sapphire (0001) surfaces are distinguished by a difference in their hydration degrees.

  17. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Study on planarization machining of sapphire wafer with soft-hard mixed abrasive through mechanical chemical polishing

    Science.gov (United States)

    Xu, Yongchao; Lu, Jing; Xu, Xipeng

    2016-12-01

    This study investigated the material removal mechanism of sapphire wafer with soft-hard mixed abrasives through mechanical chemical polishing (MCP). The polishing film, which contains diamond as hard abrasives and high reactivity silica as soft abrasives, is prepared through sol-gel technology. Silica abrasives with regular spherical shape and high reactivity are prepared through hydrolysis-precipitation. Diamond grits with three different particle sizes are used as abrasives. Results show that the rate of material removal of mixed abrasives during MCP is more than 52.6% of that of single hard abrasives and the decrease in surface roughness is more than 21.6% of that of single hard abrasives. These results demonstrate that the ideal planarization of sapphire wafer with high removal rate and good surface quality can be achieved when the effect of mechanical removal of hard abrasives and the chemical corrosion effect of soft abrasives are in dynamic equilibrium. A model that describes the material removal mechanism of sapphire with mixed abrasives during MCP is proposed. The results of thermodynamic calculation and polishing residue analysis are used to demonstrate the rationality of the model.

  19. Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

    Science.gov (United States)

    Park, K.; Bayram, C.

    2016-10-01

    Here, we investigate the effects of thermal boundary resistance (TBR) and temperature-dependent thermal conductivity on the thermal resistance of GaN/substrate stacks. A combination of parameters such as substrates {diamond, silicon carbide, silicon, and sapphire}, thermal boundary resistance {10-60 m2K/GW}, heat source lengths {10 nm-20 μm}, and power dissipation levels {1-8 W} are studied by using technology computer-aided design (TCAD) software Synopsys. Among diamond, silicon carbide, silicon, and sapphire substrates, the diamond provides the lowest thermal resistance due to its superior thermal conductivity. We report that due to non-zero thermal boundary resistance and localized heating in GaN-based high electron mobility transistors, an optimum separation between the heat source and substrate exists. For high power (i.e., 8 W) heat dissipation on high thermal conductive substrates (i.e., diamond), the optimum separation between the heat source and substrate becomes submicron thick (i.e., 500 nm), which reduces the hotspot temperature as much as 50 °C compared to conventional multi-micron thick case (i.e., 4 μm). This is attributed to the thermal conductivity drop in GaN near the heat source. Improving the TBR between GaN and diamond increases temperature reduction by our further approach. Overall, we provide thermal management design guidelines for GaN-based devices.

  20. Development of Sensors Using Evanescent Wave Interactions in Sapphire Optical Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Michael W. Renfro; Eric H. Jordan

    2006-12-31

    The development of tunable diode laser absorption sensors for measurements in industrial boilers, both through direct absorption and evanescent wave absorption have been performed in the work presented here. These sensors use both direct and indirect absorption through the use of evanescent interactions within a coal firing combustion environment. For the direct absorption sensor, wavelength modulation absorption spectroscopy with second-harmonic detection was implemented within a physical probe designed to be placed with the flue stack of a power plant. Measurements were taken of carbon dioxide and water vapor concentration during operation at a local industrial facility. The design of this sensor probe overcomes problems of beam steering and permits a reference gas measurement. Extracted concentration data and design elements from the direct absorption measurements are presented. In addition, development of a sapphire fiber-based sensor using evanescent wave absorption along the outside of the fiber is presented. Evanescent absorption allows for the laser transmission to be maintained in the fiber at all times and may alleviate problems of background emission, beam steering, and especially scattering of the laser beam from solid particles experienced through free path direct absorption measurements in particulated flows. Laboratory measurements using evanescent fiber detection are presented.

  1. Mesoscale Laser Processing using Excimer and Short-Pulse Ti: Sapphire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Shirk, M D; Rubenchik, A M; Gilmer, G H; Stuart, B C; Armstrong, J P; Oberhelman, S K; Baker, S L; Nikitin, A J; Mariella, R P

    2003-07-28

    Targets to study high-energy density physics and inertial confinement fusion processes have very specific and precise tolerances that are pushing the state-of-the-art in mesoscale microsculpting technology. A significant effort is required in order to advance the capabilities to make these targets with very challenging geometries. Ultrashort pulsed (USP) Ti:Sapphire lasers and excimer lasers are proving to be very effective tools in the fabrication of the very small pieces that make up these targets. A brief description of the dimensional and structural requirements of these pieces will be presented, along with theoretical and experimental results that demonstrate to what extent these lasers are achieving the desired results, which include sub-{mu}m precision and RMS surface values well below 100 nm. This work indicates that excimer lasers are best at sculpting the polymer pieces and that the USP lasers work quite well on metal and aerogel surfaces, especially for those geometries that cannot be produced using diamond machining and where material removal amounts are too great to do with focused ion beam milling in a cost effective manner. In addition, the USP laser may be used as part of the procedure to fill target capsules with fusion fuel, a mixture of deuterium and tritium, without causing large perturbations on the surface of the target by keeping holes drilled through 125 {micro}m of beryllium below 5 {micro}m in diameter.

  2. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    Directory of Open Access Journals (Sweden)

    Kohei Ueno

    2017-02-01

    Full Text Available High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001 via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  3. Defects creation in sapphire by swift heavy ions: A fluence depending process

    Energy Technology Data Exchange (ETDEWEB)

    Kabir, A. [LRPCSI, Universite 20 Aout 55, BP 26, Route d' El-Hadaiek, Skikda (Algeria)], E-mail: a.nour_kabir@yahoo.fr; Meftah, A. [LRPCSI, Universite 20 Aout 55, BP 26, Route d' El-Hadaiek, Skikda (Algeria); Stoquert, J.P. [InESS, 23, rue du Loess - BP 20 CR - F-67037 Strasbourg Cedex 02 (France); Toulemonde, M.; Monnet, I. [CIMAP, BP 5133, 14070 Caen Cedex 05 (France)

    2009-03-15

    Single crystals of sapphire ({alpha}-Al{sub 2}O{sub 3}) were irradiated at GANIL with 0.7 MeV/amu xenon ions corresponding to an electronic stopping power of 21 keV/nm. Several fluences were applied between 5 x 10{sup 11} and 2 x 10{sup 14} ions/cm{sup 2}. Irradiated samples were characterized using optical absorption spectroscopy. This technique exhibited the characteristic bands associated with F and F{sup +} centers defects. The F centers density was found to increase with the fluence following two different kinetics: a rapid increase for fluences less than 10{sup 13} ions/cm{sup 2} and then, a slow increase for higher fluences. For fluences less than 10{sup 13} ions/cm{sup 2}, results are in good agreement with those obtained by Canut et al. [B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thevenard, M. Toulemonde, Phys. Rev. B 51 (1995) 12194]. In the fluences range: 10{sup 13}-10{sup 14} ions/cm{sup 2}, the F centers defects creation process is found to be different from the one evidenced for fluences less than 10{sup 13} ions/cm{sup 2}.

  4. Latent tracks in sapphire induced by 20-MeV fullerene beams

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, S.M.; Bonardi, N.; Canut, B. [Departement de Physique des Materiaux (UMR CNRS 5586), Universite Claude Bernard Lyon I, 69622 Villeurbanne Cedex (France); Della-Negra, S. [Institut de Physique Nucleaire, CNRS-IN2P3, 91406 Orsay (France)

    1998-01-01

    Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated with 20-MeV fullerene beams in a fluence range from 1.0{times}10{sup 10} to 2.2{times}10{sup 11} C{sub 60}{sup +}cm{sup {minus}2}. The cluster electronic stopping power (dE/dx){sub e} was approximately 62keVnm{sup {minus}1}. Two complementary techniques were employed to assess the modifications induced by these irradiations: Rutherford-backscattering spectrometry in channeling geometry (RBS-C) and transmission electron microscopy (TEM). The disorder induced by electronic processes is clearly determined by the RBS-C analysis. A damage cross section A{sub e} of about 2.2{times}10{sup {minus}12}cm{sup 2} has been extracted from the disorder kinetics, which corresponds to a track radius of {approx}8.5nm. From lattice-disorder profiling, a maximal decorrelation length of the C{sub 60} clusters in the crystal was estimated to be {approx}150nm. TEM micrographs exhibit cylindrical latent tracks formed around the projectile trajectory, while the high-resolution observations evidence the amorphization of sapphire in the core of these tracks. The present results have been interpretated within a model of high locally deposited energy densities in the cluster irradiation regime. {copyright} {ital 1998} {ital The American Physical Society}

  5. Defects creation in sapphire by swift heavy ions: A fluence depending process

    Science.gov (United States)

    Kabir, A.; Meftah, A.; Stoquert, J. P.; Toulemonde, M.; Monnet, I.

    2009-03-01

    Single crystals of sapphire (α-Al 2O 3) were irradiated at GANIL with 0.7 MeV/amu xenon ions corresponding to an electronic stopping power of 21 keV/nm. Several fluences were applied between 5 × 10 11 and 2 × 10 14 ions/cm 2. Irradiated samples were characterized using optical absorption spectroscopy. This technique exhibited the characteristic bands associated with F and F + centers defects. The F centers density was found to increase with the fluence following two different kinetics: a rapid increase for fluences less than 10 13 ions/cm 2 and then, a slow increase for higher fluences. For fluences less than 10 13 ions/cm 2, results are in good agreement with those obtained by Canut et al. [B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thévenard, M. Toulemonde, Phys. Rev. B 51 (1995) 12194]. In the fluences range: 10 13-10 14 ions/cm 2, the F centers defects creation process is found to be different from the one evidenced for fluences less than 10 13 ions/cm 2.

  6. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.

  7. Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching.

    Science.gov (United States)

    Yamin, Tony; Wissberg, Shai; Cohen, Hagai; Cohen-Taguri, Gili; Sharoni, Amos

    2016-06-15

    The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change.

  8. Laser-induced microexplosion confined in the bulk of a sapphire crystal: evidence of multimegabar pressures.

    Science.gov (United States)

    Juodkazis, S; Nishimura, K; Tanaka, S; Misawa, H; Gamaly, E G; Luther-Davies, B; Hallo, L; Nicolai, P; Tikhonchuk, V T

    2006-04-28

    Extremely high pressures (approximately 10 TPa) and temperatures (5 x 10(5) K) have been produced using a single laser pulse (100 nJ, 800 nm, 200 fs) focused inside a sapphire crystal. The laser pulse creates an intensity over 10(14) W/cm2 converting material within the absorbing volume of approximately 0.2 microm3 into plasma in a few fs. A pressure of approximately 10 TPa, far exceeding the strength of any material, is created generating strong shock and rarefaction waves. This results in the formation of a nanovoid surrounded by a shell of shock-affected material inside undamaged crystal. Analysis of the size of the void and the shock-affected zone versus the deposited energy shows that the experimental results can be understood on the basis of conservation laws and be modeled by plasma hydrodynamics. Matter subjected to record heating and cooling rates of 10(18) K/s can, thus, be studied in a well-controlled laboratory environment.

  9. Reduction of batwing effect in white light interferometry for measurement of patterned sapphire substrates (PSS) wafer

    Science.gov (United States)

    Tapilouw, Abraham Mario; Chang, Yi-Wei; Yu, Long-Yo; Wang, Hau-Wei

    2016-08-01

    Patterned sapphire substrates (PSS) wafers are used in LED manufacturing to enhance the luminous conversion of LED chips. The most critical characteristics in PSS wafers are height, width, pitch and shape of the pattern. The common way to measure these characteristics is by using surface electron microscope (SEM). White light interferometry is capable to measure dimension with nanometer accuracy and it is suitable for measuring the characteristics of PSS wafers. One of the difficulties in measuring PSS wafers is the aspect ratio and density of the features. The high aspect ratio combined with dense pattern spacing diffracts incoming lights and reduces the accuracy of the white light interferometry measurement. In this paper, a method to improve the capability of white light interferometry for measuring PSS wafers by choosing the appropriate wavelength and microscope objective with high numerical aperture. The technique is proven to be effective for reducing the batwing effect in edges of the feature and improves measurement accuracy for PSS wafers with circular features of 1.95 um in height and diameters, and 700 nm spacing between the features. Repeatability of the measurement is up to 5 nm for height measurement and 20 nm for pitch measurement.

  10. Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE

    Institute of Scientific and Technical Information of China (English)

    LU Dian-qing; LI Xin-hua; LIU Xue-dong

    2005-01-01

    The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 min, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.

  11. The Autonomous Cryocooled Sapphire Oscillator: A Reference for Frequency Stability and Phase Noise Measurements

    Science.gov (United States)

    Giordano, V.; Grop, S.; Fluhr, C.; Dubois, B.; Kersalé, Y.; Rubiola, E.

    2016-06-01

    The Cryogenic Sapphire Oscillator (CSO) is the microwave oscillator which feature the highest short-term stability. Our best units exhibit Allan deviation σy (τ) of 4.5x10-16 at 1s, ≈ 1.5x10-16 at 100 s ≤ t ≤ 5,000 s (floor), and ≤ 5x10-15 at one day. The use of a Pulse-Tube cryocooler enables full two year operation with virtually no maintenance. Starting with a short history of the CSO in our lab, we go through the architecture and we provide more details about the resonator, the cryostat, the oscillator loop, and the servo electronics. We implemented three similar oscillators, which enable the evaluation of each with the three- cornered hat method, and provide the potential for Allan deviation measurements at parts of 10-17 level. One of our CSOs (ULISS) is transportable, and goes with a small customized truck. The unique feature of ULISS is that its σy (τ) can be validated at destination by measuring before and after the roundtrip. To this extent, ULISS can be regarded as a traveling standard of frequency stability. The CSOs are a part of the Oscillator IMP project, a platform dedicated to the measurement of noise and short-term stability of oscillators and devices in the whole radio spectrum (from MHz to THz), including microwave photonics. The scope spans from routine measurements to the research on new oscillators, components, and measurement methods.

  12. Modeling of dopant segregation in sapphire single crystal fibre growth by Micro-Pulling-Down method

    Science.gov (United States)

    Wenjia, Su; Duffar, Thierry; Nehari, Abdeljelil; Kononets, Valerii; Lebbou, Kheirreddine

    2017-09-01

    Experiments and numerical simulations are conducted in order to study the causes and solutions for the Ti inhomogeneity problem in Ti doped sapphire Micro-Pulling-Down (μ-PD) growth. The measurement and modeling of the thermal and flow fields, electromagnetic field, Ti concentration in the molten zone and along the fibre axis are compared. For the mean Ti concentration along the fibre and temperature along the iridium crucible, the modeling results are consistent with experiments. Results showed that for high pulling rate, the mass transfer in the capillary is dominated by convection. Marangoni convection is strong in the meniscus due to the large temperature gradient, which has great impact on the Ti distribution for different fibre radii. For high pulling rate, Ti concentration increases quickly from the seed along the fibre axis, and reaches a constant value after about 0.5-2 mm. Radial segregation is high for large diameter fibres. The constant Ti concentration along the fibre axis is increasing when increasing the fibre radius from 0.2 to 0.6 mm. For 0.8 mm, it decreases due to the change of the vortex. At low growth rate, the transport in the capillary is diffusive, back to the crucible, which leads to a Scheil-like Ti distribution, in full agreement with the experimental results.

  13. A sapphire fibre thermal probe based on fast Fourier transform and phase-lock loop

    Institute of Scientific and Technical Information of China (English)

    Wang Yu-Tian; Wang Dong-Sheng; Ge Wen-Qian; Cui Li-Chao

    2006-01-01

    A sapphire fibre thermal probe with Cra+ ion-doped end is developed by using the laser heated pedestal growth method. The fluorescence thermal probe offers advantages of compact structure, high performance and ability to withstand high temperature in a detection range from room temperature to 450℃. Based on the fast Fourier transform(FFT), the fluorescence lifetime is obtained from the tangent function of phase angle of the non-zeroth terms in the FFT result. This method has advantages such as quick calculation, high accuracy and immunity to the background noise. This FFT method is compared with other traditional fitting methods, indicating that the standard deviation of the FFT method is about half of that of the Prony method and about 1/6 of that of the log-fit method. And the FFT method is immune to the background noise involved in a signal. So, the FFT method is an excellent way of processing signals. In addition, a phase-lock amplifier can effectively suppress the noise.

  14. Dash line glass- and sapphire-cutting with high power USP laser

    Science.gov (United States)

    Mishchik, Konstantin; Chassagne, Bruno; Javaux-Léger, Clémentine; Hönninger, Clemens; Mottay, Eric; Kling, Rainer; Lopez, John

    2016-03-01

    Glass cutting is a subject of high interest for flat panel display and consumer electronics industries. Among laser-based, water jet-based and diamond tool-based existing solutions, ultra-short pulses (USP) appear as a promising technology since this laser technology has the unique capacity to produce highly localized bulk modification owing to non-linear absorption. The cutting using USP lasers could be performed either by full ablation which is slow and generates a lot of dust, by controlled fracture propagation which is slow as well and may lead to path deviation, by stealth dicing which produces rough sidewalls, or by self-breaking induced by in-volume laser irradiation. The laser treatment is often continuous which is not necessary to perform glass cutting and may lead to over-exposure. In this paper we report on single pass glass and sapphire cutting using an USP laser (20W @200kHz or 8W@2MHz) using dash line laser treatment along the cutting trajectory. In-volume energy deposition was done along the glass thickness owing to a Bessel beam. The results will be discussed in terms of sidewall profile and roughness, path deviation, rim sharpness, energy dose and feed rate. Dash line treatment enables to tune the energy deposition and to produce the cutting effect but with a narrower heat affected zone, a better sidewall quality and a more accurate trajectory control of the cutting path.

  15. Sapphire capillaries for laser-driven wakefield acceleration in plasma. Fs-laser micromachining and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Schwinkendorf, Jan-Patrick

    2012-08-15

    Plasma wakefields are a promising approach for the acceleration of electrons with ultrahigh (10 to 100 GV/m) electric fields. Nowadays, high-intensity laser pulses are routinely utilized to excite these large-amplitude plasma waves. However, several detrimental effects such as laser diffraction, electron-wake dephasing and laser depletion may terminate the acceleration process. Two of these phenomena can be mitigated or avoided by the application of capillary waveguides, e.g. fabricated out of sapphire for longevity. Capillaries may compensate for laser diffraction like a fiber and allow for the creation of tapered gas-density profiles working against the dephasing between the accelerating wave and the particles. Additionally, they offer the possibility of controlled particle injection. This thesis is reporting on the set up of a laser for fs-micromachining of capillaries of almost arbitrary shapes and a test stand for density-profile characterization. These devices will permit the creation of tailored gas-density profiles for controlled electron injection and acceleration inside plasma.

  16. Seeking the boundary of boundary extension.

    Science.gov (United States)

    McDunn, Benjamin A; Siddiqui, Aisha P; Brown, James M

    2014-04-01

    Boundary extension (BE) is a remarkably consistent visual memory error in which participants remember seeing a more wide-angle image of a scene than was actually viewed (Intraub & Richardson, Journal of Experimental Psychology: Learning, Memory, and Cognition 15:179-187, 1989). Multiple stimulus factors are thought to contribute to the occurrence of BE, including object recognition, conceptual knowledge of scenes, and amodal perception at the view boundaries (Intraub, Wiley Interdisciplinary Reviews: Cognitive Science 3:117-127, 2012). In the present study, we used abstract scenes instead of images of the real world, in order to remove expectations based on semantic associations with objects and the schematic context of the view. Close-angle and wide-angle scenes were created using irregular geometric shapes rated by independent observers as lacking any easily recognizable structure. The abstract objects were tested on either a random-dot or a blank background in order to assess the influence of implied continuation of the image beyond its boundaries. The random-dot background conditions had background occlusion cues either present or absent at the image border, in order to test their influence on BE in the absence of high-level information about the scenes. The results indicate that high-level information about objects and schematic context is unnecessary for BE to occur, and that occlusion information at the image boundary also has little influence on BE. Contrary to previous studies, we also found clear BE for all conditions, despite using scenes depicting undetailed objects on a blank white background. The results highlighted the ubiquitous nature of BE and the adaptability of scene perception processes.

  17. Obliquity along plate boundaries

    Science.gov (United States)

    Philippon, Mélody; Corti, Giacomo

    2016-12-01

    Most of the plate boundaries are activated obliquely with respect to the direction of far field stresses, as roughly only 8% of the plate boundaries total length shows a very low obliquity (ranging from 0 to 10°, sub-orthogonal to the plate displacement). The obliquity along plate boundaries is controlled by (i) lateral rheological variations within the lithosphere and (ii) consistency with the global plate circuit. Indeed, plate tectonics and magmatism drive rheological changes within the lithosphere and consequently influence strain localization. Geodynamical evolution controls large-scale mantle convection and plate formation, consumption, and re-organization, thus triggering plate kinematics variations, and the adjustment and re-orientation of far field stresses. These geological processes may thus result in plate boundaries that are not perpendicular but oblique to the direction of far field stresses. This paper reviews the global patterns of obliquity along plate boundaries. Using GPlate, we provide a statistical analysis of present-day obliquity along plate boundaries. Within this framework, by comparing natural examples and geological models, we discuss deformation patterns and kinematics recorded along oblique plate boundaries.

  18. Boundary Conformal Field Theory

    CERN Document Server

    Cardy, J L

    2004-01-01

    Boundary conformal field theory (BCFT) is simply the study of conformal field theory (CFT) in domains with a boundary. It gains its significance because, in some ways, it is mathematically simpler: the algebraic and geometric structures of CFT appear in a more straightforward manner; and because it has important applications: in string theory in the physics of open strings and D-branes, and in condensed matter physics in boundary critical behavior and quantum impurity models. In this article, however, I describe the basic ideas from the point of view of quantum field theory, without regard to particular applications nor to any deeper mathematical formulations.

  19. 单晶蓝宝石的延性研磨加工%Ductile lapping of single crystal sapphire

    Institute of Scientific and Technical Information of China (English)

    戴欣平; 赵萍; 文东辉

    2012-01-01

    To achieve the ductile lapping of a single crystal sapphire, micro/nano mechanic characteristics of the sapphire (0001) plane were measured by nanoindentation and nanoscratch methods. The indentation model of single cone abrasive grain was proposed and then critical force conditions were deduced during ductile lapping process. Experimental studies were conducted for the single crystal sapphire based on the diamond abrasive grain charging into a synthetic tin plate, and characteristics of ductile lapped surface were measured by a NT9800 white light interferometer, a Scan Emission Microscopy (SEM) and a Transmission Electron Microscopy (TEM). Experimental results show that nanoindentation and nanoscratch methods can provide processing parameters for the ductile lapping of single crystal sapphires, and its critical depth of pile-up is around 100 nm for sapphire nanoindenta-tion. The ductile lapping of the single crystal sapphire can be implemented by charging into diamond abrasive grains and selecting proper loads and the optimal load for ductile lapping is 21 kPa. After ductile lapping, the surface scratch depth of single crystal sapphire shows a smaller dispersion and the dislocation and slip are formed on the lapped surface.%为实现单晶蓝宝石的延性研磨加工,采用纳米压痕和划痕法测试并分析了单晶蓝宝石(0001)面的微纳力学特性,建立了单颗圆锥状磨粒的压入模型并计算了延性研磨加工的受力临界条件,分析了金刚石磨粒嵌入合成锡研磨盘表面的效果.对单晶蓝宝石进行了延性研磨加工试验,采用NT9800白光干涉仪、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等方法分析了单晶蓝宝石的延性研磨表面特征.试验结果表明:采用纳米压痕和划痕法可以为单晶蓝宝石的延性研磨加工提供工艺参数,单晶蓝宝石的延性堆积的极限深度为100 nm,金刚石磨粒的嵌入及在适当载荷下可以实现蓝宝石的延性研磨加

  20. Shared care and boundaries:

    DEFF Research Database (Denmark)

    Winthereik, Brit Ross

    2008-01-01

    and technology studies. Findings – The paper shows how a version of “the responsible patient” emerges from the project which is different from the version envisioned by the project organisation. The emerging one is concerned with the boundary between primary and secondary sector care, and not with the boundary...... of healthcare in relation to IT design. Originality/value – The paper shows that “unshared” care does not exist; care is always shared among human and nonhuman actors. It also points to the value of studying how boundaries are enacted in projects that seek to create continuity across boundaries. Udgivelsesdato......Purpose – The paper seeks to examine how an online maternity record involving pregnant women worked as a means to create shared maternity care. Design/methodology/approach – Ethnographic techniques have been used. The paper adopts a theoretical/methodological framework based on science...

  1. FWS Approved Acquisition Boundaries

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This data layer depicts the external boundaries of lands and waters that are approved for acquisition by the U.S. Fish and Wildlife Service (USFWS) in North America,...

  2. FWS Approved Acquisition Boundaries

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This data layer depicts the external boundaries of lands and waters that are approved for acquisition by the U.S. Fish and Wildlife Service (USFWS) in North...

  3. VT Telephone Exchange Boundaries

    Data.gov (United States)

    Vermont Center for Geographic Information — (Link to Metadata) The UtilityTelecom_EXCHANGE represents Vermont Telephone Exchange boundaries as defined by the VT Public Service Board. The original data was...

  4. NM School District Boundaries

    Data.gov (United States)

    Earth Data Analysis Center, University of New Mexico — The dataset represents the boundaries of all public school districts in the state of New Mexico. The source for the data layer is the New Mexico Public Education...

  5. FWS Approved Acquisition Boundaries

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This data layer depicts the external boundaries of lands and waters that are approved for acquisition by the U.S. Fish and Wildlife Service (USFWS) in North America,...

  6. Tax Unit Boundaries

    Data.gov (United States)

    Kansas Data Access and Support Center — The Statewide GIS Tax Unit boundary file was created through a collaborative partnership between the State of Kansas Department of Revenue Property Valuation...

  7. Watershed Boundary Areas

    Data.gov (United States)

    Department of Homeland Security — This map layer contains hydrologic unit boundaries and codes for the United States, Puerto Rico, and the U.S. Virgin Islands. It was revised for inclusion in the...

  8. HUC 8 Boundaries

    Data.gov (United States)

    Kansas Data Access and Support Center — This data set is a digital hydrologic unit boundary that is at the 4-digit, 6-digit, 8-digit, and 11-digit level. The data set was developed by delineating the...

  9. Site Area Boundaries

    Data.gov (United States)

    U.S. Environmental Protection Agency — This dataset consists of site boundaries from multiple Superfund sites in U.S. EPA Region 8. These data were acquired from multiple sources at different times and...

  10. The boundary l

    Directory of Open Access Journals (Sweden)

    Muhammad Naseer

    2014-09-01

    Full Text Available The present problem is the steady boundary layer flow and heat transfer of a hyperbolic tangent fluid flowing over a vertical exponentially stretching cylinder in its axial direction. After applying usual boundary layer with a suitable similarity transformation to the given partial differential equations and the boundary conditions, a system of coupled nonlinear ordinary differential equations is obtained. This system of ordinary differential equations subject to the boundary conditions is solved with the help of Runge–Kutta–Fehlberg method. The effects of the involved parameters such as Reynolds numbers, Prandtl numbers, Weissenberg numbers and the natural convection parameter are presented through the graphs. The associated physical properties on the flow and heat transfer characteristics that is the skin friction coefficient and Nusselt numbers are presented for different parameters.

  11. 500 Cities: City Boundaries

    Data.gov (United States)

    U.S. Department of Health & Human Services — This city boundary shapefile was extracted from Esri Data and Maps for ArcGIS 2014 - U.S. Populated Place Areas. This shapefile can be joined to 500 Cities...

  12. Allegheny County Boundary

    Data.gov (United States)

    Allegheny County / City of Pittsburgh / Western PA Regional Data Center — This dataset contains the Allegheny County boundary. If viewing this description on the Western Pennsylvania Regional Data Center’s open data portal...

  13. Allegheny County Parcel Boundaries

    Data.gov (United States)

    Allegheny County / City of Pittsburgh / Western PA Regional Data Center — This dataset contains parcel boundaries attributed with county block and lot number. Use the Property Information Extractor for more control downloading a filtered...

  14. Site Area Boundaries

    Data.gov (United States)

    U.S. Environmental Protection Agency — This dataset consists of site boundaries from multiple Superfund sites in U.S. EPA Region 8. These data were acquired from multiple sources at different times and...

  15. State Park Statutory Boundaries

    Data.gov (United States)

    Minnesota Department of Natural Resources — Legislative statutory boundaries for sixty six state parks, six state recreation areas, and eight state waysides. These data are derived principally from DNR's...

  16. National Forest Boundaries

    Data.gov (United States)

    Minnesota Department of Natural Resources — This theme shows the USFS national forest boundaries in the state. This data was acquired from the GIS coordinators at both the Chippewa National Forest and the...

  17. Minnesota County Boundaries

    Data.gov (United States)

    Minnesota Department of Natural Resources — Minnesota county boundaries derived from a combination of 1:24,000 scale PLS lines, 1:100,000 scale TIGER, 1:100,000 scale DLG, and 1:24,000 scale hydrography...

  18. VT Federal Aid Urban Boundaries

    Data.gov (United States)

    Vermont Center for Geographic Information — Federal Aid Urban boundaries are defined based on US Census data. The roadways within these boundaries have urban classifications. These FAU boundaries were updated...

  19. GRAI N-BOUNDARY DIFFUSION

    OpenAIRE

    Peterson, N.

    1982-01-01

    The more useful experimental techniques for determining grain-boundary diffusion are briefly described followed by a presentation of results that shed light on the models and mechanisms of grain-boundary and dislocation diffusion. Studies of the following grain-boundary diffusion phenomena will be considered ; anisotropy in grain-boundary diffusion, effect of orientation relationship on grain-boundary diffusion, effect of boundary type and dislocation dissociation, lattice structure, correlat...

  20. Stability and Phase Noise Tests of Two Cryo-Cooled Sapphire Oscillators

    Science.gov (United States)

    Dick, G. John; Wang, Rabi T.

    1998-01-01

    A cryocooled Compensated Sapphire Oscillator (CSO), developed for the Cassini Ka-band Radio Science experiment, and operating in the 8K - 10K temperature range was previously demonstrated to show ultra-high stability of sigma(sub y) = 2.5 x 10 (exp -15) for measuring times 200 seconds less than or equal to tau less than or equal to 600 seconds using a hydrogen maser as reference. We present here test results for a second unit which allows CSO short-term stability and phase noise to be measured for the first time. Also included are design details of a new RF receiver and an intercomparison with the first CSO unit. Cryogenic oscillators operating below about 10K offer the highest possible short term stability of any frequency sources. However, their use has so far been restricted to research environments due to the limited operating periods associated with liquid helium consumption. The cryocooled CSO is being built in support of the Cassini Ka-band Radio Science experiment and is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3-4 x 10 (exp -15) (1 second less than or equal to tau less than or equal to 100 seconds) and phase noise of -73dB/Hz @ 1Hz measured at 34 GHz. Installation in 5 stations of NASA's deep space network (DSN) is planned in the years 2000 - 2002. In the previous tests, actual stability of the CSO for measuring times tau less than or equal to 200 seconds could not be directly measured, being masked by short-term fluctuations of the H-maser reference. Excellent short-term performance, however, could be inferred by the success of an application of the CSO as local oscillator (L.O.) to the JPL LITS passive atomic standard, where medium-term stability showed no degradation due to L.O. instabilities at a level of (sigma)y = 3 x 10 (exp -14)/square root of tau. A second CSO has now been constructed, and all cryogenic aspects have been verified, including a resonator turn-over temperature of 7.907 K

  1. Weight of Production of Emeralds, Rubies, Sapphires, and Tanzanite from 1995 Through 2005

    Science.gov (United States)

    Yager, Thomas R.; Menzie, W. David; Olson, Donald W.

    2008-01-01

    U.S. Geological Survey (USGS) historically has not attempted to report comprehensive world production of gemstones on a country basis. This was because estimation of gemstone production is inherently difficult due to the fragmentary nature of the industry, the lack of governmental oversight or reporting in many countries where colored gemstones are mined, and the wide variation in quality between individual gemstones. Unlike diamonds, which, with the exception of the alluvial stones of West Africa, are mainly produced by large international mining companies and evaluated, cut, and marketed through a highly developed pricing structure and complex commercial arrangements, colored gemstones are mainly mined by individuals or small companies and have less developed evaluation and marketing arrangements. The trading centers for colored gems are smaller and less well known than the diamond centers. Colored gemstones, like alluvial diamonds, have the potential to be used to fund civil conflicts and other illegal activities, and because trade in colored gemstones is less organized than that of diamonds, they offer less opportunity for effective regulation of their trade. And, like diamond, until the recent advent of the Kimberley Process no generally accepted estimates of colored gemstone production globally or by producing country have existed. The present paper is a first attempt to develop production statistics for the three precious gems -emeralds, rubies, and sapphires - and tanzanite tanzanite, a semi-precious gem. The data consist of the weight of production of each of the gemstones from 1995 through 2005. Preliminary data on the weights of gemstone production were presented as a poster session at the Gemological Institute of America's Gemological Research Conference in San Diego, CA, in 2006, and as a published abstract (Yager, 2006) in an attempt to gather response to the estimates. The USGS continues to welcome information and suggestions that would improve the

  2. Structural, morphological and optical properties of Cd doped ZnO film grown on a- and r-plane sapphire substrate by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Fouzri, A., E-mail: Fouzri.Afif@gmail.com [Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche, High resolution X-ray diffractometer, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Boukadhaba, M.A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche, High resolution X-ray diffractometer, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Touré, A. [Unité de recherche hétéroepitaxie et ses applications, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Sakly, N. [Laboratoire Physico-chimie des Interfaces, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); and others

    2014-08-30

    Highlights: • Cd doped ZnO films have been grown on (1 1 −20) (a-plane) and (0 1 −1 2) (r-plane) sapphire substrate by MOCVD. • A maximum cadmium incorporation of 8.5% and 11.2% has been, respectively, determined for films deposited on a- and r-plane sapphire. • XRD study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0 0 0 1] and a-plane (1 1 −2 0) film are epitaxially grown on r-plane-sapphire. • The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at low temperature (20 K). - Abstract: Cd doped ZnO films have been grown on (1 1 −2 0) (a-plane) and (0 1 −1 2) (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been, respectively, determined for films deposited on a- and r-plane sapphire. The optical transmission spectra and energy band-gap equation established by Makino et al. were used to estimate the cadmium mole fraction in layer. Structural, morphological and optical properties of these films were examined using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and room and low temperature photoluminescence (Pl) as Cd incorporation and employed substrate. X-ray diffraction study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0 0 0 1] direction and a-plane (1 1 −2 0) film are epitaxially grown on r-plane sapphire. AFM image show significant differences between morphologies depending on orientation sapphire substrate but no significant differences on surface roughness have been found. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at

  3. The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate.

    Science.gov (United States)

    Chang, Chun-Ming; Shiao, Ming-Hua; Yang, Chin-Tien; Cheng, Chung-Ta; Hsueh, Wen-Jeng

    2014-10-01

    In this study, patterned sapphire substrates are fabricated using nanosphere lithography (NSL) and inductively-coupled-plasma reactive ion etching (ICP-RIE). Polystyrene nanospheres of approximately 600 nm diameter are self-assembled on c-plane sapphire substrates by spin-coating. The diameter of the polystyrene nanospheres is modified to adjust the etching mask pitch cycle using oxygen plasma in the ICP-RIE system. A nickel thin film mask of 100 nm thickness is deposited by electron-beam evaporation on a substrate covered with treated nanospheres. The sapphire substrate is then etched in an inductively coupled plasma system using BCl3/Ar gas, to fabricate a structure with a periodic sub-micron hole array with different sidewall intervals. The DC bias voltage, the sapphire etching rate, the surface roughness, are studied as a function of the ICP and the RF power. Different sub-micron hole arrays with spacing cycles of 89 nm, 139 nm and 167 nm are successfully fabricated on the sapphire substrate, using suitable etching parameters.

  4. Structural and electrical properties of grain boundary Josephson junctions based on Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lopera, W.; Girata, D. [Antioquia Univ., Medellin (Colombia). Dept. of Fisica; Osorio, J.; Prieto, P. [Dept. de Fisica, Univ. del Valle, Cali (Colombia)

    2000-07-01

    An in situ deposition sputtering process at high pressure has been developed for preparing high quality superconducting Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} thin films on different substrates. Both microstructural and electrical properties were well characterized by TEM, AFM, RBS, X-ray diffraction, resistivity and magnetic susceptibility. The high reproducibility of the film quality facilitated a detailed study of Josephson effect in bicrystalline grain boundary junctions (GBJs). Thin films were deposited on (001) SrTiO{sub 3} bicrystals with misorientation angles of 24 and patterned by a photolithography process using Br-ethanol chemical etching. The width of the microbridges ranges from 10 to 50 {mu}m. The critical current densities across the grain boundary have been measured and compared to the critical current in the film. A modulation in the critical current was found under magnetic field and also Shapiro steps in the I-V curves under microwave irradiation have been observed indicating a Josephson behavior. Electrical properties are well described by the resistively shunted junction (RSJ) model. The I{sub c}R{sub n} product reaches values around 2.0 mV at 4.2 K. (orig.)

  5. Resonant behavior of the barrier of YBa{sub 2}Cu{sub 3}O{sub 7} grain boundary Josephson junctions fabricated on bicrystalline substrates with different geometries

    Energy Technology Data Exchange (ETDEWEB)

    Navacerrada, M.A., E-mail: mdelosangeles.navacerrada@upm.es [Grupo de Acustica Arquitectonica, Escuela Tecnica Superior de Arquitectura, Universidad Politecnica de Madrid, Avenida Juan de Herrera 4, 28040 Madrid (Spain); Lucia, M.L.; Sanchez-Quesada, F. [Departamento Fisica Aplicada III (Electricidad y Electronica), Facultad de Cc. Fisicas, Universidad Complutense, Avenida Complutense s/n, 28040 Madrid (Spain)

    2012-12-14

    We have analyzed a resonant behavior in the dielectric constant associated to the barrier of YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) grain boundary Josephson junctions (GBJJs) fabricated on a wide variety of bicrystalline substrates: 12 Degree-Sign [0 0 1] tilt asymmetric, 24 Degree-Sign [0 0 1] tilt asymmetric, 24 Degree-Sign [0 0 1] tilt symmetric, 24 Degree-Sign [1 0 0] tilt asymmetric, 45 Degree-Sign [1 0 0] tilt asymmetric and 24 Degree-Sign [0 0 1] tilt symmetric +45 Degree-Sign [1 0 0] tilt asymmetric bicrystals. The resonance analysis allows us to estimate a more appropriate value of the relative dielectric constant, and so a more adequate value for the length L of the normal N region assuming a SNINS model for the barrier. In this work, the L dependence on the critical current density Jc has been investigated. This analysis makes possible a single representation for all the substrate geometries independently on around which axes the rotation is produced to generate the grain boundary. On the other hand, no clear evidences exist on the origin of the resonance. The resonance frequency is in the order of 10{sup 11} Hz, pointing to a phonon dynamic influence on the resonance mechanism. Besides, its position is affected by the oxygen content of the barrier: a shift at low frequencies is observed when the misorientation angle increases.

  6. Adaptive Sentence Boundary Disambiguation

    CERN Document Server

    Palmer, D D; Palmer, David D.; Hearst, Marti A.

    1994-01-01

    Labeling of sentence boundaries is a necessary prerequisite for many natural language processing tasks, including part-of-speech tagging and sentence alignment. End-of-sentence punctuation marks are ambiguous; to disambiguate them most systems use brittle, special-purpose regular expression grammars and exception rules. As an alternative, we have developed an efficient, trainable algorithm that uses a lexicon with part-of-speech probabilities and a feed-forward neural network. After training for less than one minute, the method correctly labels over 98.5\\% of sentence boundaries in a corpus of over 27,000 sentence-boundary marks. We show the method to be efficient and easily adaptable to different text genres, including single-case texts.

  7. Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate.

    Science.gov (United States)

    Wu, YewChung Sermon; Isabel, A Panimaya Selvi; Zheng, Jian-Hsuan; Lin, Bo-Wen; Li, Jhen-Hong; Lin, Chia-Chen

    2015-04-22

    The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

  8. Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs.

    Science.gov (United States)

    Kuo, Chien-Ting; Hsu, Lung-Hsing; Huang, Bo-Hsin; Kuo, Hao-Chung; Lin, Chien-Chung; Cheng, Yuh-Jen

    2016-09-10

    The influence of the microstructure geometry of patterned sapphire substrates (PSS) on the light extraction efficiency (LEE) of GaN light-emitting diodes (LEDs) is numerically analyzed. Cone structures of various dimensions are studied, along with dome and mixed microstructures. LEE is found to mainly depend on the microstructure surface slope. LEE rises quickly with slope and flattens out when the slope exceeds 0.6. Scaling down the microstructure has little effect on LEE. Light rays are found to travel longer distances in PSS LEDs, as compared with LEDs grown on a flat substrate. Keeping GaN absorption loss low is important for LEE optimization.

  9. High-efficiency multipass Ti:sapphire amplifiers for a continuous-wave single-mode laser.

    Science.gov (United States)

    Georges, P; Estable, F; Salin, F; Poizat, J P; Grangier, P; Brun, A

    1991-02-01

    We present the amplification of a continuous-wave single-mode ring dye laser in Ti:sapphire. A peak gain of 2 x 10(6) has been obtained in a passive multipass amplifier, which yielded 20-nsec pulses of 0.7-mJ energy at 780 nm. We discuss the advantages of this passive multipass amplifier in comparison with a regenerative amplifier that we have also developed. By second-harmonic generation we obtained high-peak-power UV pulses from the amplified single-mode laser.

  10. A first-principles study on Al-doped ZnO growth polarity on sapphire (0001) surface

    Science.gov (United States)

    Yang, Ping; Gao, Qian; Hu, Zhen-Peng; Zhang, Li-Xin

    2016-06-01

    Based on the first-principles method, the polarity inversion mechanism of Al-doped ZnO grown on sapphire (0001) substrate was investigated. This study revealed that the Al dopant tends to float on the surface of the buffer layer and leads to form ZnO nucleation islands of Zn-polarity without changing in-plane orientation. Finally, these islands evolve to wall-like nanostructure with Zn-termination. The results can explain the reason of the polarity inversion phenomenon in the experiment and supply more information for controlling the ZnO growth polarity.

  11. Tunable, continuous-wave Ti:sapphire channel waveguide lasers written by femtosecond and picosecond laser pulses.

    Science.gov (United States)

    Grivas, Christos; Corbari, Costantino; Brambilla, Gilberto; Lagoudakis, Pavlos G

    2012-11-15

    Fabrication and cw lasing at 798.25 nm is reported for femtosecond (fs) and picosecond (ps) laser-inscribed channel waveguides in Ti:sapphire crystals. Lasing in channels written by fs (ps) pulses was obtained above a threshold of 84 mW (189 mW) with a maximum output power and a slope efficiency of 143 mW (45 mW) and 23.5% (7.1%), respectively. The emission wavelength was tuned over a 170 nm range by using a birefringent filter in an external cavity.

  12. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power

    OpenAIRE

    Gürel, Kutan; Wittwer, Valentin J; Hoffmann, Martin; Saraceno, Clara J.; Hakobyan, Sargis; Resan, B; Rohrbacher, A; Weingarten, K.; Schilt, Stéphane; Südmeyer, Thomas

    2015-01-01

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieve...

  13. Measurement of nonlinear optical refraction of composite material based on sapphire with silver by Kerr-lens autocorrelation method.

    Science.gov (United States)

    Yu, Xiang-xiang; Wang, Yu-hua

    2014-01-13

    Silver nanoparticles synthesized in a synthetic sapphire matrix were fabricated by ion implantation using the metal vapor vacuum arc ion source. The optical absorption spectrum of the Ag: Al2O3 composite material has been measured. The analysis of the supercontinuum spectrum displayed the nonlinear refractive property of this kind of sample. Nonlinear optical refraction index was identified at 800 nm excitation using the Kerr-lens autocorrelation (KLAC) technique. The spectrum showed that the material possessed self-defocusing property (n(2) = -1.1 × 10(-15) cm(2)W). The mechanism of nonlinear refraction has been discussed.

  14. A self-tunable Titanium Sapphire laser by rotating a set of parallel plates of active material.

    Science.gov (United States)

    Iparraguirre, Ignacio; Azkargorta, Jon; Fernandez, Joaquín; Balda, Rolindes; Del Río Gaztelurrutia, Teresa; Illarramendi, M Asunción; Aramburu, Ibon

    2009-03-02

    In a recent work, the authors reported the experimental demonstration of wavelength tuning in a single birefringent plate of Ti:sapphire crystal based on its own birefringence properties. In that device, the thickness of the active plate, limited by the width of the single order tuning spectral region, imposed a strong constraint in the power performance of the laser. The aim of this work is to overcome this limitation by using a set of several identical birefringent plates so that the wavelength tuning of the laser is obtained by synchronously rotating the plates in their own plane. A discussion about the laser performance is presented.

  15. Stability of boundary measures

    CERN Document Server

    Chazal, Frédéric; Mérigot, Quentin

    2007-01-01

    We introduce the boundary measure at scale r of a compact subset of the n-dimensional Euclidean space. We show how it can be computed for point clouds and suggest these measures can be used for feature detection. The main contribution of this work is the proof a quantitative stability theorem for boundary measures using tools of convex analysis and geometric measure theory. As a corollary we obtain a stability result for Federer's curvature measures of a compact, allowing to compute them from point-cloud approximations of the compact.

  16. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

    Institute of Scientific and Technical Information of China (English)

    XIE Xin-Jian; CHEN Jia-Rong; CAO Xian-Cun; ZHONG Fei; QIU Kai; LIU Gui-Feng; YIN Zhi-Jun; WANG Yu-Qi; LI Xin-Hua; JI Chang-Jian; HAN Qi-Fen

    2006-01-01

    We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of about 1μm was initially grown on a (0001) sapphire substrate by molecular beam epitaxy. Then it was dealt by putting, into 45% NaOH solution at 100°C for Wmin. By this process a quasi-porous GaN Rim was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050°C in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.

  17. Evidence of colour-modification induced charge and structural disorder in natural corundum: Spectroscopic studies of beryllium treated sapphires and rubies

    Science.gov (United States)

    Sastry, M. D.; Mane, Sandesh N.; Gaonkar, Mahesh P.; Bagla, H.; Panjikar, J.; Ramachandran, K. T.

    2009-07-01

    Corundum α - Al2O3 single crystals is an important gemstone known by different names depending on the colour it exhibits which in turn depends on the impurities that are present. The colour depends on the valence state of the impurity element present in corundum (Cr3+ in ruby, Fe3+ in yellow sapphire and Fe-Ti complex in blue sapphire). There have been a number of reports of diffusion controlled high temperature chemical reactions to influence the colouration in these materials. Present paper deals with the Raman and FT-IR results on Be treated rubies/sapphires and gives evidence of the disorder brought about by such treatments. This can be effectively used for diagnostic purposes for detecting the treated stones.

  18. Evidence of colour-modification induced charge and structural disorder in natural corundum: Spectroscopic studies of beryllium treated sapphires and rubies

    Energy Technology Data Exchange (ETDEWEB)

    Sastry, M D; Mane, Sandesh N; Gaonkar, Mahesh P; Panjikar, J; Ramachandran, K T [Gemmological Institute of India, 304 Sukhsagar Building, N.S.Patkar Marg, Opera House, Mumbai 400 007 (India); Bagla, H, E-mail: mdsastry@yahoo.co.in [Department of Chemistry, KC College, Church gate, Mumbai 400 020 (India)

    2009-07-15

    Corundum {alpha} - Al{sub 2}O{sub 3} single crystals is an important gemstone known by different names depending on the colour it exhibits which in turn depends on the impurities that are present. The colour depends on the valence state of the impurity element present in corundum (Cr{sup 3+} in ruby, Fe{sup 3+} in yellow sapphire and Fe-Ti complex in blue sapphire). There have been a number of reports of diffusion controlled high temperature chemical reactions to influence the colouration in these materials. Present paper deals with the Raman and FT-IR results on Be treated rubies/sapphires and gives evidence of the disorder brought about by such treatments. This can be effectively used for diagnostic purposes for detecting the treated stones.

  19. Proposal for a New Test of the Time Independence Of The Fine Structure Constant, alpha, Using Orthogonally Polarised Whispering Gallery Modes in a Single Sapphire Resonator

    CERN Document Server

    Tobar, M E; Tobar, Michael Edmund; Hartnett, John Gideon

    2003-01-01

    A new experiment to test for the time independence of the fine structure constant, alpha, is proposed. The experiment utilizes orthogonally polarized Transverse Electric and Transverse Magnetic Whispering Gallery Modes in a single sapphire resonator tuned to similar frequencies. When configured as a dual mode sapphire clock, we show that the anisotropy of sapphire makes it is possible to undertake a sensitive measurement from the beat frequency between the two modes. At infrared frequencies this is possible due to the different effect of the lowest phonon frequency on the two orthogonally polarized modes. At microwave frequencies we show that the phonon effect is too small. We show that the Electron Spin Resonance of paramagnetic impurities (such as Cr3+) in the lattice effects only one polarization with an alpha^6 dependence. This enables an enhancement of the sensitivity to temporal changes in a at microwave frequencies.

  20. Boundaries of the universe

    CERN Document Server

    Glasby, John S

    2013-01-01

    The boundaries of space exploration are being pushed back constantly, but the realm of the partially understood and the totally unknown is as great as ever. Among other things this book deals with astronomical instruments and their application, recent discoveries in the solar system, stellar evolution, the exploding starts, the galaxies, quasars, pulsars, the possibilities of extraterrestrial life and relativity.

  1. Minnesota County Boundaries - lines

    Data.gov (United States)

    Minnesota Department of Natural Resources — Minnesota county boundaries derived from a combination of 1:24,000 scale PLS lines, 1:100,000 scale TIGER, 1:100,000 scale DLG, and 1:24,000 scale hydrography lines....

  2. Dual boundary spanning

    DEFF Research Database (Denmark)

    Li-Ying, Jason

    2016-01-01

    The extant literature runs short in understanding openness of innovation regarding and the different pathways along which internal and external knowledge resources can be combined. This study proposes a unique typology for outside-in innovations based on two distinct ways of boundary spanning: wh...

  3. Challenging the Boundaries

    DEFF Research Database (Denmark)

    Nørgaard, Nina

    2004-01-01

    To many people, challenging the boundaries between the traditional disciplines in foreign language studies means doing cultural studies. The aim of this article is to pull in a different direction by suggesting how the interface between linguistics and literature may be another fertile field...

  4. Pressure measurement using the R fluorescence peaks and 417 cm-1 Raman peak of an anvil in a sapphire-anvil cell

    Science.gov (United States)

    Gao, Rong; Li, Heping

    2012-06-01

    In this study, synthetic sapphire crystals were used as anvils, coupled with a metal gasket, in a Merrill-Bassett-type pressure cell (sapphire-anvil cell (SAC)). Quartz and ruby chips were compressed in the cell and used as pressure calibrators for the SAC. In the sample-anvil interface, the relationship of the frequency shifts of the R1, R2 and 417 cm-1 peaks with pressure was studied. They were constructed as new pressure calibrators. To test the applicability of the newly calibrated SAC, the Raman spectra of dolomite and calcite were measured in situ at room temperature.

  5. Updating of the interpretation of the optical absorption and emission of Verneuil synthetic and natural metamorphic blue sapphire: the role of V2+, V3+and Cr2+

    OpenAIRE

    Palanza, V; N. Chiodini; Galli, A.; Lorenzi, R.; Moretti, F.; Paleari, AMF; Spinolo, GM

    2010-01-01

    In the blue colored sapphires of metamorphic origin and Verneuil synthetic studied here, the absorption-emission properties in the VIS-NIR range are largely determined by Cr3+ and Ti3+, as we have been able to demonstrate recently. In that work a sharp radio-luminescence band occurring at 870 nm in Verneuil blue sapphires was left unattributed: here we give evidence for the attribution of that band to the 2E emission transition of V2+, and for the existence of such an emission also in natural...

  6. Ruby-sapphire-spinel mineralization in marble of the middle and southern Urals: Geology, mineralogy, and genesis

    Science.gov (United States)

    Kisin, A. Yu.; Murzin, V. V.; Tomilina, A. V.; Pritchin, M. E.

    2016-07-01

    Ruby and spinel occurrences hosted in marble on the eastern slope of the Urals are considered. Ruby- and spinel-bearing marble is a specific rock in granite-gneiss complexes of the East Ural Megazone, which formed at the Late Paleozoic collision stage of the evolution of the Urals. Organogenic marine limestone is the protolith of the marble. No relict sedimentary bedding has been retained in the marble. The observed banding is a secondary phenomenon related to crystallization and is controlled by flow cleavage. Magnesian metasomatism of limestone with the formation of fine-grained dolomite enriched in Cr, V, Ti, Mn, Cu, Zn, Ga, and REE took place at the prograde stage of metamorphism. Dedolomitization of rocks with the formation of background calcite marble also developed at the prograde stage. Mg-calcite marble with spinel and ruby of the first type formed in the metamorphic fluid circulation zone. Magnesian metasomatism with the formation of bicarbonate marble with ruby, pink sapphire, and spinel of the second type developed at the early retrograde stage. The formation of mica-bearing mineralized zones with corundum and spinel of the third type controlled by cleavage fractures is related to the pneumatolytic-hydrothermal stage. The data on ruby-bearing marble in the Urals may be used for forecasting and prospecting of ruby and sapphire deposits hosted in marble worldwide.

  7. Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhi-Feng; QIN Fu-Wen; ZANG Hai-Rong; ZHANG Dong; CHEN Wei-Ji; ZHI An-Bo; LIU Xing-Long; YU Bo; JIANG Xin

    2011-01-01

    Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100sccm.The results show that the properties of the films are strongly dependent on N2 flux.%@@ Highly preferred InN Rims are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer.The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement.The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm.The results show that the properties of the Rims are strongly dependent on N2 flux.

  8. Room temperature ferromagnetism in epitaxial Cr{sub 2}O{sub 3} thin films grown on r-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Punugupati, Sandhyarani, E-mail: spunugu@ncsu.edu; Narayan, Jagdish; Hunte, Frank [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-05-21

    We report on the epitaxial growth and magnetic properties of Cr{sub 2}O{sub 3} thin films grown on r-sapphire substrate using pulsed laser deposition. The X-ray diffraction (XRD) (2θ and Φ) and TEM characterization confirm that the films are grown epitaxially. The r-plane (011{sup ¯}2) of Cr{sub 2}O{sub 3} grows on r-plane of sapphire. The epitaxial relations can be written as [011{sup ¯}2] Cr{sub 2}O{sub 3} ‖ [011{sup ¯}2] Al{sub 2}O{sub 3} (out-of-plane) and [1{sup ¯}1{sup ¯}20] Cr{sub 2}O{sub 3} ‖ [1{sup ¯}1{sup ¯}20] Al{sub 2}O{sub 3} (in-plane). The as-deposited films showed ferromagnetic behavior up to 400 K but ferromagnetism almost vanishes with oxygen annealing. The Raman spectroscopy data together with strain measurements using high resolution XRD indicate that ferromagnetism in r-Cr{sub 2}O{sub 3} thin films is due to the strain caused by defects, such as oxygen vacancies.

  9. Synthesis of Aligned ZnO Nanorod Array on Silicon and Sapphire Substrates by Thermal Evaporation Technique

    Institute of Scientific and Technical Information of China (English)

    K.M.K. Srivatsa; Deepak Chhikara; M. Senthil Kumar

    2011-01-01

    High density ZnO nanorods were grown by thermal evaporation of Zn powder at 700℃ on Si (100) and sapphire (0001) substrates at atmospheric pressure without adding any catalyst. The nanorods were characterizated in terms of their structural and optical properties. The nanorods grown on Si have a diameter of 350-400 nm and a length of 1.2 μm while those on sapphire have a diameter of 600-800 nm and a length of 2.5 μm. During the structural characterization, it is noticed that the rods grow along the (0002) plane with perfect hexagonal facet. The room temperature photoluminescence spectrum showed a strong UV emission peak at 385 nm with a weak green band emission, which confirms that nanorods have good optical properties. It is observed that the oxygen partial pressure plays an important role to control the shape and size of the nanorods in thermal evaporation growth technique.

  10. Precision measurement of a low-loss cylindrical dumbbell-shaped sapphire mechanical oscillator using radiation pressure

    Science.gov (United States)

    Bourhill, J.; Ivanov, E.; Tobar, M. E.

    2015-08-01

    We present first results from a number of experiments conducted on a 0.53-kg cylindrical dumbbell-shaped sapphire crystal. Here we report on an optomechanical experiment utilizing a modification to the typical cylindrical architecture. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects result in parametric frequency modulation of resonant microwave whispering gallery modes that are simultaneously excited within the crystal. A microwave readout system is implemented, allowing extremely low noise measurements of this frequency modulation near our modes of interest, having a phase noise floor of -165 dBc/Hz at 100 kHz. Fine tuning of the crystal's suspension has allowed for the optimization of mechanical quality factors in preparation for cryogenic experiments, with a value of Q =8 ×107 achieved at 127 kHz. This results in a Q ×f product of 1013, equivalent to the best measured values in a macroscopic sapphire mechanical system. Results are presented that demonstrate the excitation of mechanical modes via radiation pressure force, allowing an experimental method of determining the transducer's displacement sensitivity d f /d x and calibrating the system. Finally, we demonstrate parametric backaction phenomenon within the system. These are all important steps towards the goal of achieving quantum limited measurements of a kilogram-scale macroscopic device for the purpose of detecting deviations from standard quantum theory resulting from quantum gravitational effects.

  11. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang; Yizheng Zhu

    2005-04-01

    This report summarizes technical progress October 2004-March 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report.

  12. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang

    2004-04-01

    This report summarizes technical progress over the third six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on sensor probe design and machining, sensor electronics design, software algorithm design, sensor field installation procedures, and sensor remote data access and control. Field testing will begin in the next several weeks.

  13. Sapphire ball lensed fiber probe for common-path optical coherence tomography in ocular imaging and sensing

    Science.gov (United States)

    Zhao, Mingtao; Huang, Yong; Kang, Jin U.

    2013-03-01

    We describe a novel common-path optical coherence tomography (CP-OCT) fiber probe design using a sapphire ball lens for cross-sectional imaging and sensing in retina vitrectomy surgery. Single mode Gaussian beam (TEM00) simulation was used to optimize lateral resolution and working distance (WD) of the common-path probe. A theoretical sensitivity model for CP-OCT was prosed to assess its optimal performance based an unbalanced photodetector configuration. Two probe designs with working distances (WD) 415μm and 1221μm and lateral resolution 11μm and 18μm, respectively were implemented with sensitivity up to 88dB. The designs are also fully compatible with conventional Michelson interferometer based OCT configurations. The reference plane of the probe, located at the distal beam exit interface of the single mode fiber (SMF), was encased within a 25-gauge hypodermic needle by the sapphire ball lens facilitates its applications in bloody and harsh environments. The performances of the fiber probe with 11μm of lateral resolution and 19μm of axial resolution were demonstrated by cross-sectional imaging of a cow cornea and retina in vitro with a 1310nm swept source OCT system. This probe was also attached to a piezoelectric motor for active compensation of physiological tremor for handheld retinal surgical tools.

  14. Quasi-3D modeling, design, and analysis of symmetric on-chip inductors in silicon-on-sapphire technology

    Science.gov (United States)

    Kong, Wan-Chul; Al-Sarawi, Said F.; Lim, Cheng-Chew; Wong, Louis

    2004-03-01

    A design and analysis of symmetric on-chip planar inductors are presented based in 0.5 μm silicon-on-sapphire CMOS process of Peregrine Semiconductor. Compared to conventional CMOS processes, an insulating thick sapphire (Al2O3) substrate enables higher quality factor inductors due to low energy loss in the substrate. In addition, symmetric cross-coupled configuration of identical asymmetric inductors of thick top metalization minimizes the insertion loss. Such differentially connected inductors are simulated on 2.5D electromagnetic field environment and a modeling method of quasi-3D structures is introduced for the metal strips. Maximum quality factor of 53.6 with 2.34 nH at 8.9 GHz is achieved by optimizing the symmetric circular inductors. This inductor is used in the design of a low power (0.42 mW) LC VCO operating at 5.8 GHz and exhibits a phase noise of -120.6 dBc/Hz at 3 MHz offset frequency.

  15. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yuan, Shu; Liu, Yingce [Quantum Wafer Inc., Foshan 528251 (China); Guo, L. Jay [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Sheng, E-mail: victor_liu63@126.com [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); Ding, Han [State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-15

    Graphical abstract: - Highlights: • TEM is used to characterize threading dislocation existing in GaN epitaxial layer. • Effect of threading dislocation on optical and electrical of LEDs is discussed. • Strip-shaped SiO{sub 2} DCBL is designed to improve current spreading performance of LEDs. - Abstract: We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO{sub 2} distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO{sub 2} DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO{sub 2} DCBL, light output power of high power PSS-LED chip could be further increased by 13%.

  16. Ultra-low vibration pulse-tube cryocooler stabilized cryogenic sapphire oscillator with 10^-16 fractional frequency stability

    CERN Document Server

    Hartnett, John G

    2010-01-01

    A low maintenance long-term operational cryogenic sapphire oscillator has been implemented at 11.2 GHz using an ultra-low-vibration cryostat and pulse-tube cryocooler. It is currently the world's most stable microwave oscillator employing a cryocooler. Its performance is explained in terms of temperature and frequency stability. The phase noise and the Allan deviation of frequency fluctuations have been evaluated by comparing it to an ultra-stable liquid-helium cooled cryogenic sapphire oscillator in the same laboratory. Assuming both contribute equally, the Allan deviation evaluated for the cryocooled oscillator is sigma_y = 1 x 10^-15 tau^-1/2 for integration times 1 < tau < 10 s with a minimum sigma_y = 3.9 x 10^-16 at tau = 20 s. The long term frequency drift is less than 5 x 10^-14/day. From the measured power spectral density of phase fluctuations the single side band phase noise can be represented by L_phi(f) = 10^-14.0/f^4+10^-11.6/f^3+10^-10.0/f^2+10^-10.2/f+ 10^-11.0 for Fourier frequencies 10...

  17. Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

    Energy Technology Data Exchange (ETDEWEB)

    Flemish, Joseph [Lumileds LLC., San Jose, CA (United States); Soer, Wouter [Lumileds LLC., San Jose, CA (United States)

    2015-11-30

    Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed for highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.

  18. Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, J.; Reddic, J.E.; Sinha, M.; Ricker, W.S.; Karlinsey, J.; Yang, J.-W.; Khan, M.A.; Chen, D.A

    2002-12-30

    The surface morphologies of MOCVD GaN films grown on sapphire substrates have been investigated by scanning tunneling microscopy (STM). High quality STM images could not be obtained prior to cleaning the les in HF, hot HCl or 2 M NaOH. STM images of the GaN films showed that the surfaces consisted of curved step edges and interlocking terraces, which were roughly 224 nm wide. Surface pits approximately 2-5 nm deep and 50-80 nm wide were observed on the GaN films, and these pits were preferentially located at a juncture between two step edges. Previous studies in the literature involving MOCVD-grown GaN on sapphire have demonstrated that the surface pits are associated with screw-component threading dislocations. Therefore, the number of screw-component threading dislocations in these GaN films is estimated as 6.3x10{sup 8} cm{sup -2} from the number surface pits observed in the STM images. X-ray photoelectron studies indicated that the major surface contaminants before cleaning were carbon and oxygen. Treatment in HF or HCl removed oxygen from the surface while treatment in NaOH was more effective at removing surface carbon.

  19. Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO(002) films with different thicknesses, grown on Al2O3 (006) substrates by metal-organic chemical vapor deposition( MOCVD), were etched by Ar ion beams. The samples were examined by D8 X-ray diffraction, scanning electron microscopy(SEM), and photoluminescence (PL) spectrometry. The structural properties vary with the increasing thickness of the films. When the film thickness is thin, the phi(Φ) scanning curves for ZnO(103) and sapphire(116) substrate show the existence of two kinds of orientation relationships between ZnO films and sapphire,which are ZnO(002)//Al2O3 (006), ZnO(100)//Al2O3 (110) and ZnO(002)//Al2O3 (006), ZnO(110)//Al2O3(110). When the thickness increases to 500 nm there is only one orientation relationship, which is ZnO(002)//Al2O3 (006), ZnO [ 100 ]//Al2O3[ 110 ]. Their photoluminescence (PL) spectra at room temperature show that the optical properties of ZnO films have been greatly improved when increasing the thickness of films is increased.

  20. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang; Yizheng Zhu

    2005-04-01

    This report summarizes technical progress October 2004-March 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report.

  1. Structural, optical and electrical study of undoped GaN layers obtained by metalorganic chemical vapor deposition on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Kuoppa, Victor-Tapio, E-mail: tapio.rangel@gmail.co [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universitaet, A-4040 Linz (Austria); Aguilar, Cesia Guarneros [Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07360, Mexico, Distrito Federal (Mexico); Sanchez-Resendiz, Victor, E-mail: victors@sees.cinvestav.m [Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07360, Mexico, Distrito Federal (Mexico)

    2011-01-31

    We investigate optical, structural and electrical properties of undoped GaN grown on sapphire. The layers were prepared in a horizontal reactor by low pressure metal organic chemical vapor deposition at temperatures of 900 {sup o}C and 950 {sup o}C on a low temperature grown (520 {sup o}C) GaN buffer layer on (0001) sapphire substrate. The growth pressure was kept at 10,132 Pa. The photoluminescence study of such layers revealed a band-to-band emission around 366 nm and a yellow band around 550 nm. The yellow band intensity decreases with increasing deposition temperature. X-ray diffraction, atomic force microscopy and scanning electron microscopy studies show the formation of hexagonal GaN layers with a thickness of around 1 {mu}m. The electrical study was performed using temperature dependent Hall measurements between 35 and 373 K. Two activation energies are obtained from the temperature dependent conductivity, one smaller than 1 meV and the other one around 20 meV. For the samples grown at 900 {sup o}C the mobilities are constant around 10 and 20 cm{sup 2} V{sup -1} s{sup -1}, while for the sample grown at 950 {sup o}C the mobility shows a thermally activated behavior with an activation energy of 2.15 meV.

  2. Skin thermal response to sapphire contact and cryogen spray cooling: a comparative study based on measurements in a skin phantom

    Science.gov (United States)

    Torres, Jorge H.; Nelson, J. Stuart; Tanenbaum, B. S.; Anvari, Bahman

    2000-05-01

    Non-specific thermal injury to the epidermis may occur as a result of laser treatment of cutaneous hypervascular malformations (e.g. port wine stains) and other dermatoses. Methods to protect the epidermis from thermal injury include sapphire contact cooling (SCC) and cryogen spray cooling (CSC). Evaluation of the skin thermal response to either cooling method and better understanding of the heat transfer process at the skin surface are essential for further optimization of cooling technique during laser therapy. We present internal temperature measurements in an epoxy resin phantom in response to both SCC and CSC, and use the results in conjunction with a mathematical model to predict the temperature distributions within human skin. Based on our results, a conductive heat transfer process at the skin interface appears to be the primary mechanism for both SCC and CSC. In the case of CSC, 'film cooling' rather than 'evaporative cooling' seems to be the dominant mode during the spurt duration. Currently, due to the lower temperature of the cryogen film and its shorter time of application, CSC produces larger temperature reductions at the skin surface and smaller temperature reductions at depths greater than 200 micrometer (i.e., higher spatial selectivity) when compared to SCC. However, SCC can potentially induce temperature reductions comparable to those produced by CSC if a sapphire temperature similar to that for a cryogen could be achieved in practice.

  3. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

    Science.gov (United States)

    Adikimenakis, A.; Lotsari, A.; Dimitrakopulos, G. P.; Kehagias, Th.; Aretouli, K. E.; Tsagaraki, K.; Androulidaki, M.; Komninou, Ph.; Georgakilas, A.

    2015-06-01

    The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structural characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5-6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.

  4. SEMICONDUCTOR MATERIALS: Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering

    Science.gov (United States)

    Xiaoli, Yang; Nuofu, Chen; Zhigang, Yin; Xingwang, Zhang; Yang, Li; Jingbi, You; Yu, Wang; Jingjing, Dong; Min, Cui; Yun, Gao; Tianmao, Huang; Xiaofeng, Chen; Yanshuo, Wang

    2010-09-01

    Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 °C for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 °C. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 °C with best crystallization.

  5. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    Science.gov (United States)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Su, Xilin; Yun, Feng

    2016-07-01

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ˜20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  6. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

    2016-07-15

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  7. Quantum gravitational effects on boundary

    CERN Document Server

    Park, I Y

    2016-01-01

    Quantum gravitational effects may hold the key to some of the outstanding problems in theoretical physics. In this work we analyze the perturbative quantum effects on the boundary of a gravitational system and Dirichlet boundary condtion imposed at the classical level. Our analysis reveals that for a black hole solution there exists a clash between the quantum effects and Dirichlet boundary condition: the solution of the one-particle-irreducible (1PI) action no longer obeys the Dirichlet boundary condition. The analysis also suggests that the violation of the Dirichlet boundary condition should be tied with a certain mechanism of information storage on the boundary.

  8. Grain Boundary Segregation in Metals

    CERN Document Server

    Lejcek, Pavel

    2010-01-01

    Grain boundaries are important structural components of polycrystalline materials used in the vast majority of technical applications. Because grain boundaries form a continuous network throughout such materials, their properties may limit their practical use. One of the serious phenomena which evoke these limitations is the grain boundary segregation of impurities. It results in the loss of grain boundary cohesion and consequently, in brittle fracture of the materials. The current book deals with fundamentals of grain boundary segregation in metallic materials and its relationship to the grain boundary structure, classification and other materials properties.

  9. Collaboration in Healthcare Through Boundary Work and Boundary Objects

    DEFF Research Database (Denmark)

    Meier, Ninna

    2015-01-01

    . In highly specialized, knowledge-intensive organizations such as healthcare organizations, organizational, professional, and disciplinary boundaries mark the formal structure and division of work. Collaboration and coordination across these boundaries are essential to minimizing gaps in patient care...

  10. Interface structure, chemistry and properties of NiAl composites fabricated from matrix-coated single-crystalline Al{sub 2}O{sub 3} fibres (sapphire) with and without an hBN interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Hu, W. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany)]. E-mail: hu@imm.rwth-aachen.de; Weirich, T. [Central Facility for Electron Microscopy, RWTH Aachen University (Germany); Hallstedt, B. [Materials Chemistry, RWTH Aachen University (Germany); Chen, H. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany)]. E-mail: chen@imm.rwth-aachen.de; Zhong, Y. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany); Gottstein, G. [Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University (Germany)

    2006-05-15

    NiAl composites with and without an hBN interlayer were produced from matrix-coated single-crystalline Al{sub 2}O{sub 3} fibres (sapphire) by diffusion bonding. The evolution of interface structure and chemistry during the fabrication processes (fibre coating, diffusion bonding and embedded casting) was characterized by electron microscopy. The interface shear stress for complete debonding was measured by fibre push-out tests at room temperature. Interface structural analysis by transmission electron microscopy demonstrates that a high interface shear strength (about 230-250 MPa) in the composites without hBN interlayers is achieved by direct contact of NiAl with aluminium oxide (intrinsic coherence). In the composites with hBN interlayers the boron nitride was partially (as-diffusion-bonded composite) or completely (as-cast composite) transformed to AlN owing to a chemical reaction with NiAl at high temperatures. The low interface shear strength (about 70 MPa) of the as-diffusion-bonded composites was caused by sliding of textured hBN basal planes. The low interface shear strength (about 75 MPa) of the as-cast composites was attributed to segregation of aluminium boride to triple junctions and grain boundaries of AlN. The interfacial reactions in the composites with hBN interlayers can be rationalized from thermodynamic calculations.

  11. Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices; Herstellung und Untersuchung von epitaktischen HTSL/Isolator-Schichten auf Saphirsubstraten zur Anwendung in HF-Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Kittel, H.

    1995-10-01

    The use of high temperature superconductors (HTSC) like YBCO with distinct lower surface resistance compared to normal conductors allows miniaturisation of high frequency (HF) circuits. The object of this work was the fabrication of YBCO thin films on low loss sapphire substrates applicable for stripline devices. To induce epitaxial growth and to avoid chemical reaction at the film-substrate boundary buffer layers were investigated. The examination of the growth properties and especially of the surface impedance has been allotted particular importance. In contrast to CaTiO{sub 3} it was possible to deposit CeO{sub 2}-buffer layers in direct growth up to a thickness of about 30 nm without cracks. The films show all growth properties required and even Laue-oscillations being a feature of high quality growth enabling the determination of film thickness distribution without destruction. The YBCO growth-, transport- and HF-properties meet the ones of YBCO films on standard substrates. A remarkable result is that the mosaic distribution of the CEO film, itself strongly dependend on film thickness, does not influence that of the YBCO film considerably. Rather it changes its shape subsequently due to YBCO deposition. A further particularity in contrast to deposition on standard substrates is the need to adjust the substrate heater tempeature for deposition of YBCO films with thicknesses {>=}300 nm needed for HF application. To demonstrate their usefullness some stripline devices like planar coils and side coupled filters have been fabricated and characterised. (orig.)

  12. Boundary transfer matrices and boundary quantum KZ equations

    Energy Technology Data Exchange (ETDEWEB)

    Vlaar, Bart, E-mail: Bart.Vlaar@nottingham.ac.uk [School of Mathematical Sciences, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2015-07-15

    A simple relation between inhomogeneous transfer matrices and boundary quantum Knizhnik-Zamolodchikov (KZ) equations is exhibited for quantum integrable systems with reflecting boundary conditions, analogous to an observation by Gaudin for periodic systems. Thus, the boundary quantum KZ equations receive a new motivation. We also derive the commutativity of Sklyanin’s boundary transfer matrices by merely imposing appropriate reflection equations, in particular without using the conditions of crossing symmetry and unitarity of the R-matrix.

  13. Effect of dislocation density on the rhombohedral twinning stress of sapphire ({alpha}-Al{sub 2}-O{sub 3}); Influencia de la densidad de dislocaciones en la tension de maclado romboedrico del zafiro ({alpha}-Al{sub 2}O{sub 3})

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, A.; Castaing, J.; Dominguez-Rodriguez, A.

    2001-07-01

    The influence of dislocations on the stress to induce rhombohedral twinning has been examined in a-Al{sub 2}=3 single crystals. Dislocation densities have been modified by basal slip induced by compression at temperatures between 1.000 and 1.300 degree centigree, at stresses up to 400 MPa. As a consequence of this pre-deformation, sapphire is more resistant to twinning at 900 degree centigree, the hardening corresponding to a stress increase by a factor of 10. The twin structure is strongly influenced by the dislocations which impede the motion of twin boundaries, therefore, for high dislocation density very thin twin lamellae are formed contrary to the case for low density. (Author) 8 refs.

  14. Normal transmitting boundary conditions

    Institute of Scientific and Technical Information of China (English)

    廖振鹏

    1996-01-01

    The multi-transmitting formula (MTF) governed by a single artificial speed is analytically developed into a generalized MTF governed by a few artificial speeds to improve its capacity in simultaneous simulation of several one-way waves propagating at different speeds.The generalized MTF is then discretized and further generalized using the space extrapolation to improve its accuracies in numerical simulation of transient waves at large angles of incidence.The above two successive generalizitions of MTF based on the notion of normal transmission lead to a compact formula of local non-reflecting boundary condition.The formula not only provides a general representation of the major schemes of existing local boundary conditions but can be used to generate new schemes,which combine advantages of different schemes.

  15. Boundary-layer theory

    CERN Document Server

    Schlichting (Deceased), Hermann

    2017-01-01

    This new edition of the near-legendary textbook by Schlichting and revised by Gersten presents a comprehensive overview of boundary-layer theory and its application to all areas of fluid mechanics, with particular emphasis on the flow past bodies (e.g. aircraft aerodynamics). The new edition features an updated reference list and over 100 additional changes throughout the book, reflecting the latest advances on the subject.

  16. The boundary is mixed

    CERN Document Server

    Bianchi, Eugenio; Rovelli, Carlo

    2013-01-01

    We show that Oeckl's boundary formalism incorporates quantum statistical mechanics naturally, and we formulate general-covariant quantum statistical mechanics in this language. We illustrate the formalism by showing how it accounts for the Unruh effect. We observe that the distinction between pure and mixed states weakens in the general covariant context, and surmise that local gravitational processes are indivisibly statistical with no possible quantal versus probabilistic distinction.

  17. The causal boundary and its relations with the conformal boundary

    Energy Technology Data Exchange (ETDEWEB)

    Herrera, J, E-mail: jherrera@agt.cie.uma.e [Departamento de Algebra, GeometrIa y TopologIa, Facultad de Ciencias, Universidad de Malaga, Campus Teatinos, 29071 Malaga (Spain)

    2010-05-01

    Our aim in this note is to present the results (obtained in [2]) which ensure that, under certain regularity conditions, the conformal boundary becomes equal to the causal boundary, not only as a point set, but in a topological and chronological level. In particular, under these conditions the conformal boundary becomes a powerful tool to compute the causal one.

  18. The open boundary equation

    Directory of Open Access Journals (Sweden)

    D. Diederen

    2015-06-01

    Full Text Available We present a new equation describing the hydrodynamics in infinitely long tidal channels (i.e., no reflection under the influence of oceanic forcing. The proposed equation is a simple relationship between partial derivatives of water level and velocity. It is formally derived for a progressive wave in a frictionless, prismatic, tidal channel with a horizontal bed. Assessment of a large number of numerical simulations, where an open boundary condition is posed at a certain distance landward, suggests that it can also be considered accurate in the more natural case of converging estuaries with nonlinear friction and a bed slope. The equation follows from the open boundary condition and is therefore a part of the problem formulation for an infinite tidal channel. This finding provides a practical tool for evaluating tidal wave dynamics, by reconstructing the temporal variation of the velocity based on local observations of the water level, providing a fully local open boundary condition and allowing for local friction calibration.

  19. Cell boundary fault detection system

    Science.gov (United States)

    Archer, Charles Jens; Pinnow, Kurt Walter; Ratterman, Joseph D.; Smith, Brian Edward

    2009-05-05

    A method determines a nodal fault along the boundary, or face, of a computing cell. Nodes on adjacent cell boundaries communicate with each other, and the communications are analyzed to determine if a node or connection is faulty.

  20. Allegheny County Zip Code Boundaries

    Data.gov (United States)

    Allegheny County / City of Pittsburgh / Western PA Regional Data Center — This dataset demarcates the zip code boundaries that lie within Allegheny County. These are not clipped to the Allgeheny County boundary. If viewing this...