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Sample records for sapelo island ga

  1. Home range and survival of breeding painted buntings on Sapelo Island, Georgia

    Science.gov (United States)

    Springborn, E.G.; Meyers, J.M.

    2005-01-01

    The southeastern United States population of the painted bunting (Passerina ciris) has decreased approximately 75% from 1966-1996 based on Breeding Bird Survey trends. Partners in Flight guidelines recommend painted bunting conservation as a high priority with a need for management by state and federal agencies. Basic information on home range and survival of breeding painted buntings will provide managers with required habitat types and estimates of land areas necessary to maintain minimum population sizes for this species. We radiotracked after-second-year male and after-hatching-year female buntings on Sapelo Island, Georgia, during the breeding seasons (late April-early August) of 1997 and 1998. We used the animal movement extension in ArcView to determine fixed-kernel home range in an unmanaged maritime shrub and managed 60-80-year-old pine (Pinus spp.)-oak Quercus spp.) forest. Using the Kaplan-Meier method, we estimated an adult breeding season survival of 1.00 for males (n = 36) and 0.94 (SE = 0.18) for females(n=27). Painted bunting home ranges were smaller in unmanaged maritime shrub (female: kernel (x) over bar = 3.5 ha [95% CI: 2.5-4.51; male: kernel (x) over bar = 3.1 ha [95% CI: 2.3-3.9]) compared to those in managed pine-oak forests (female: kernel (x) over bar = 4.7 ha [95% CI: 2.8-6.6]; male: kernel (x) over bar = 7.0 ha [95% CI: 4.9-9.1]). Buntings nesting in the managed pine-oak forest flew long distances (>= 300 m) to forage in salt marshes, freshwater wetlands, and moist forest clearings. In maritime shrub buntings occupied a compact area and rarely moved long distances. The painted bunting population of Sapelo Island requires conservation of maritime shrub as potential optimum nesting habitat and management of nesting habitat in open-canopy pine-oak sawtimber forests by periodic prescribed fire (every 4-6 years) and timber thinning within a landscape that contains salt marsh or freshwater wetland openings within 700 m of those forests.

  2. Ripening of single-layer InGaAs islands on GaAs (001)

    Institute of Scientific and Technical Information of China (English)

    Liu Ke; Zhou Qing; Zhou Xun; Guo Xiang; Luo Zi-Jiang; Wang Ji-Hong; Hu Ming-Zhe

    2013-01-01

    The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 rmin,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy (STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.

  3. Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Machida, Ryuto, E-mail: 8113703@ed.tus.ac.jp [Department of Applied Electronics, Graduate School of Industrial Science and Technology, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585 (Japan); Toda, Ryusuke; Fujikawa, Sachie [Department of Applied Electronics, Graduate School of Industrial Science and Technology, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585 (Japan); Hara, Shinsuke; Watanabe, Issei [National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan); Fujishiro, Hiroki I., E-mail: fujisiro@te.noda.tus.ac.jp [Department of Applied Electronics, Graduate School of Industrial Science and Technology, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585 (Japan)

    2015-10-01

    Highlights: • The shape and morphology of GaSb islands were studied under various conditions. • The atomic step type affected the shape and morphology of the GaSb islands. • The reconstructed surface type affects the density and size of the islands. - Abstract: The effects of the Ga-induced reconstructed surface and atomic step type on the shape and morphology of GaSb islands on a Si(1 0 0) surface were studied using ultrahigh-vacuum scanning tunneling microscopy and atomic force microscopy. Though both anisotropic elongated islands and isotropic islands were formed on clean Si and Ga/Si(1 0 0)-2 × 3 substrates, isotropic islands were dominantly formed on Ga/Si(1 0 0)-2 × 2 substrates at 300 °C. The density and size of GaSb islands on 2 × 2-Ga at 300 °C were estimated to be 4.9 × 10{sup 10} cm{sup −2} and 29.1 nm, respectively. The difference in the GaSb island shapes could be caused by the terrace and step of the substrate surface being changed by step rearrangement due to the deposition of Ga atoms at high temperatures. Above 350 °C, the density and size of islands decreased to 2.7 × 10{sup 9} cm{sup −2} and increased to 62.0 nm, respectively. In the initial growth stage, scanning tunneling microscopy results revealed that a Sb/Si(1 0 0)-2 × 1 reconstructed surface was formed above 350 °C. The large islands were assumed to aggregate from the surface diffusion of each atom because the Sb-terminated Si surface is inactive against Ga and Sb atoms. The type of the reconstructed surface is also suggested to affect the density and size of the islands.

  4. Kinetics of microbially mediated reactions: dissimilatory sulfate reduction in saltmarsh sediments (Sapelo Island, Georgia, USA)

    Science.gov (United States)

    Roychoudhury, Alakendra N.; Van Cappellen, Philippe; Kostka, Joel E.; Viollier, Eric

    2003-04-01

    A sediment disk reactor was tested in once flow-through mode to retrieve kinetic parameters for the Monod rate law that describes sulfate reduction. The experimental method was compared with a previously described procedure by the authors where a sediment plug-flow reactor was operated in a recirculation mode. In recirculation mode, accumulation of metabolic byproducts in certain cases may result in negative feedback, thus preventing accurate determination of kinetic information. The method described in this article provides an alternative to the recirculation sediment plug-flow-through reactor technique for retrieving kinetic parameters of microbially mediated reactions in aquatic sediments. For sulfate reduction in a saltmarsh site, a maximum estimate of the half-saturation concentration, Ks, of 204±26 μM and a maximum reaction rate, Rm, of 2846±129 nmol cm( wet sediment ) 3 d-1 was determined. The Ks value obtained was consistent with the one estimated previously (K s=240±20 μM) from a different site within the same saltmarsh mud flat using a recirculating reactor. From the Rm value and reduction rates determined using 35SO 42- incubation experiments, we infer that sulfate reduction is limited in the field. Substrate availability is not the main contributor for the limitation, however. Competition from other microbes, such as iron reducers affects the activity of sulfate reducers in the suboxic to anoxic zones, whereas aerobes compete in the oxic zone. High sulfide concentration in the pore water may also have acted as a toxin to the sulfate reducers in the field.

  5. InGaN/GaN岛形量子阱样品透射电镜制样与表征方法%TEM sample preparation and characterization of InGaN/GaN quantum wells on island structure

    Institute of Scientific and Technical Information of China (English)

    杨晓东

    2014-01-01

    This article studied the TEM sample preparation technique of the 3⁃D islands structure of Group⁃III nitride semiconductor materials, which reduced the structural damage in the process of the sample preparation, and characterized the structure, composition and luminescent properties of the InGaN/GaN quantum wells. Through microstructure analysis of nonpolar facets of 3⁃D GaN islands, It could be confirmed that all the sidewalls facets were half⁃polar facets, indicating that the InGaN/GaN quantum wells on the facets were affected by the weakening of the polarization effect. The 3⁃D islands structural characteristics effectively enhanced the quantum wells light⁃emitting efficiency. What’ s more, due to the existence of different facets, multi⁃ wavelength white light emission of the same island was realized.%本文研究了氮化物半导体三维岛形结构的透射电镜制样技术,减小了样品在制样过程中的结构损伤,并对InGaN/GaN量子阱进行了结构、成分和发光特性的表征。通过对三维GaN小岛非极性小面微观结构的分析,确定了侧壁小面皆为半极性面,说明小面生长的InGaN/GaN量子阱受到较小的极化效应影响。该岛形量子阱的结构特征,有效地增强了量子阱的发光效率,同时由于不同小面的存在,实现了同一小岛的多波长白光发射。

  6. Electron microscopic and optical investigations of the indium distribution GaAs capped InxGa1-xAs islands

    DEFF Research Database (Denmark)

    Woggon, U.; Langbein, Wolfgang Werner; Hvam, Jørn Märcher;

    1997-01-01

    Results from a structural and optical analysis of buried InxGa1-xAs islands carried out after the process of GaAs overgrowth are presented. It is found that during the growth process, the indium concentration profile changes and the thickness of the wetting layer emanating from a Stranski-Krastan...

  7. 33 CFR 80.720 - St. Simons Island, GA to Amelia Island, FL.

    Science.gov (United States)

    2010-07-01

    ... Jekyll Island charted in approximate position latitude 31°05.9′ N. longitude 81°24.5′ W. (b) A line drawn from the southernmost tank on Jekyll Island charted in approximate position latitude 31°01.6′ N...

  8. Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ghali, Mohsen [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Laboratory of Nanophotonics, Physics Department, Faculty of Science, Kafrelsheikh University, 33516 Kafrelsheikh (Egypt); Ohno, Yuzo; Ohno, Hideo [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

    2015-09-21

    We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30 kV/cm.

  9. Energetics of island formation of AlAs, GaAs, and InAs on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Geunjung; Efimov, Oleg; Yoon, Younggui [Chung-Ang University, Seoul (Korea, Republic of)

    2012-03-15

    We study the energetics of island formation of AlAs, GaAs, and InAs on Si(100)2x1 substrates from first-principles. Si(100)2x1:As is stable under As-rich conditions in all cases. Si(100)2x1:(AlAs) and Si(100)2x1:(GaAs) are stable under Al-rich and Ga-rich conditions, respectively. However, the surface energy of Si(100)2x1:InAs is higher than that of Si(100)2x1:As under In-rich conditions. The energies of thicker epitaxial overlayer films of AlAs, GaAs, and InAs are predicted to be higher than the corresponding energies of these monolayer films.

  10. Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Brault, J.; Tanaka, S.; Sarigiannidou, E.; Rouviere, J.L.; Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, LPSC, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Nakagawa, H. [Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812 (Japan); Feuillet, G. [CEA/LETI, DTS/SRD/LaboSiC, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2002-12-01

    The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  11. Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany)

    2015-06-22

    Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.

  12. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

    Science.gov (United States)

    Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

    2012-02-07

    Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

  13. Archean hydrothermal oceanic floor sedimentary environments: DXCL drilling project of the 3.2 Ga Dixon Island Formation, Pilbara, Australia

    Science.gov (United States)

    Kiyokawa, S.; Ito, T.; Ikehara, M.; Yamaguchi, K. E.; Naraoka, H.; Sakamoto, R.; Suganuma, Y.

    2009-12-01

    Many place in Archean greenstone belts have been reported of the black chert to Iron rich sediments above volcanic sequence. The chemical sedimentary sequence has been recognized to form by as hydrothermal siliceous sequence. These sediments contain the hint to understand the Archean ocean and earth surface environments. Here, we will focus the Dixon Island and Cleaverville formations, which are one of the best preserved Archean hydrothermal sedimentary sequence in the world, to recognized detail stratigraphy and restored deep ocean environment. We did scientific drilling, which is called ‘DXCL drilling project’, at 2007 summer. This drilling project had been selected two coastal sites; CL site at lower part of the Cleaverville Formation, and another is DX site at the upper Dixon Island Formation. A systematic combinations of geological, sedimentological, geochemical, and geobiological approaches will be applied to the fresh samples. Here we will show the recent result of this sequence, which will be key evidence to understand the nature of the middle Archean (3.2 Ga) marine environment influenced by hydrothermal activity. The 3.2 Ga Dixon Island -Cleaverville formations composed of volcanic rock units and chemical-volcanosedimentary sequence which are identified by accreted immature island arc setting. The ~350m-thick Dixon Island Formation which is overlie by pillow basalt consists mainly of highly silicified volcanic-siliceous sequences that contain apparent microbial mats and bacterial fossil-like structure within black chert and also includes a komatiite-rhyolite sequences bearing hydrothermal veins. The >300m-thick Cleaverville Formation, which conformably overlay pillow basalt, contains a thick unit of reddish shale, bedded red-white chert and banded iron formation. It partly contains chert fragments-bearing pyroclastic beds. In detail lithology from the drill cores, the CL and DX contain different type of organic rocks. The CL 1 and CL2 core samples

  14. Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs(001) fabricated using molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    WU Ju; JIN Pen; L(U) Xiao-jing; JIAO Yu-heng; WANG Zhan-guo

    2007-01-01

    Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs(001) system fabricated using molecularbeam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one.

  15. Reticulitermes nelsonae, a New Species of Subterranean Termite (Rhinotermitidae from the Southeastern United States

    Directory of Open Access Journals (Sweden)

    Su Yee Lim

    2012-01-01

    Full Text Available Reticulitermes nelsonae, a new species of Rhinotermitidae (Isoptera is described based on specimens from Sapelo Island, GA, Thomasville, GA, Havelock, NC, and Branford, FL. Adult (alate and soldier forms are described. Diagnostic characters are provided and incorporated into a supplemental couplet of a dichotomous key to the known species of Reticulitermes found in Georgia, USA.

  16. Reticulitermes nelsonae, a New Species of Subterranean Termite (Rhinotermitidae) from the Southeastern United States.

    Science.gov (United States)

    Lim, Su Yee; Forschler, Brian T

    2012-01-06

    Reticulitermes nelsonae, a new species of Rhinotermitidae (Isoptera) is described based on specimens from Sapelo Island, GA, Thomasville, GA, Havelock, NC, and Branford, FL. Adult (alate) and soldier forms are described. Diagnostic characters are provided and incorporated into a supplemental couplet of a dichotomous key to the known species of Reticulitermes found in Georgia, USA.

  17. Phlebotomine sand flies of edible-nest swiftlet cave of Lang Ga Jiew Island, Chumphon province, Thailand.

    Science.gov (United States)

    Chittsamart, B; Samruayphol, Suchada; Sungvorayothin, Sangsit; Pothiwat, Ratcharin; Samung, Yudthana; Apiwathnasorn, Chamnarn

    2015-09-01

    The present study reported for the first time phlebotomine sandfly species inhabiting edible-nest swiftlet cave of the isolated island, based on field collections made during June 2010-May 2011. The insect diversity was relatively lower to that of mainland caves. All species, Phlebotomus stantoni, Sergentomyia anodontis, Sergentomyia bailyi, Sergentomyia gemmea, Sergentomyia hodgsoni and Sergentomyia punjabensis were either endemic island species or native elsewhere in Thailand. Sergentomyia hodgsoni was the most prevalent species accounted for 94.7% and classified as a troglophile species. Seasonal pattern of the phlebotomine abundance and some aspects of their population characteristics were described and discussed. Two ectoparasites, Ornithodorus and Paracimex sp. were also incidentally collected from the swiftlet cave.

  18. Seroprevalence of Toxoplasma gondii, Sarcocystis neurona, and Encephalitozoon cuniculi in three species of lemurs from St. Catherines Island, GA, USA.

    Science.gov (United States)

    Yabsley, Michael J; Jordan, Carly N; Mitchell, Sheila M; Norton, Terry M; Lindsay, David S

    2007-03-15

    In the current study, we determined the seroprevalence of Toxoplasma gondii, Sarcocystis neurona, and Encephalitozoon cuniculi in three species of lemurs from St. Catherines Island, Georgia. Serum samples were tested from 52 ring-tailed lemurs (Lemur catta), six blue-eyed black lemurs (Eulemur macaco flavifrons), and four black and white ruffed lemurs (Varecia variegata variegata) using an agglutination assay. Three ring-tailed lemurs (5.8%) were positive for T. gondii (titer of 1:50); one ring-tailed lemur (1.9%) and one black and white ruffed lemur (25%) were positive for S. neurona (titers of 1:1000); and one ring-tailed lemur (1.9%) was positive for E. cuniculi (titer of 1:400). All blue-eyed black lemurs were negative for antibodies to T. gondii, S. neurona, and E. cuniculi. This is the first detection of antibodies to T. gondii in ring-tailed lemurs and antibodies to S. neurona and E. cuniculi in any species of prosimian.

  19. Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth

    Science.gov (United States)

    Ageev, Oleg A.; Solodovnik, Maxim S.; Balakirev, Sergey V.; Mikhaylin, Ilya A.; Eremenko, Mikhail M.

    2017-01-01

    The molecular beam epitaxial growth of GaAs on the GaAs(001)-(2×4) surface is investigated using a kinetic Monte Carlo-based method. The developed algorithm permits to focus on the kinetic effects in a wide range of growth conditions and enables considerable computational speedup. The simulation results show that the growth rate has a dramatic influence upon both the island morphology and Ga surface diffusion length. The average island size reduces with increasing growth rate while the island density increases with increasing growth rate as well as As4/Ga beam equivalent pressure ratio. As the growth rate increases, the island density becomes weaker dependent upon the As4/Ga pressure ratio and approaches to a saturation value. We also discuss three characteristics of Ga surface diffusion, namely a diffusion length of a Ga adatom deposited first, an average diffusion length, and an island spacing as an average distance between islands. The calculations show that the As4/Ga pressure ratio dependences of these characteristics obey the same law, but with different coefficients. An increase of the As4/Ga pressure ratio leads to a decrease in both the diffusion length and island spacing. However, its influence becomes stronger with increasing growth rate for the first Ga adatom diffusion length and weaker for the average diffusion length and for the island spacing.

  20. MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, K.; Shiba, Y.; Asai, K. (Advanced Tech. Research Labs., Sumitomo Metal Industries, Ltd., Hyogo (Japan))

    1991-01-01

    GaAs was grown on Si using an (Al,In)GaAs/GaAs buffer layer. The etch pit density (EPD) revealed by molten KOH could be reduced by adding Al{sub x}Ga{sub 1-x}As or In{sub x}Ga{sub 1-x}As to the GaAs buffer layer, depending on the composition (x); the lowest EPD, 4x10{sup 6} cm{sup -2} was obtained when x was 0.3 in Al{sub x}Ga{sub 1-x}As. To understand the results, the initial growth stage of GaAs on Si was investigated by scanning electron microscopy. GaAs growth using an Al{sub 0.3}Ga{sub 0.7}As layer produced small islands at a sufficiently high density that the islands coalesced, unlike those without the layer. The dependence of EPD and island density on the composition (x) were almost the same. This result indicates that improvement of the quality of the GaAs layer is related to the coalescence of the GaAs island at an early stage of the growth of GaAs on Si. (orig.).

  1. Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Placidi, E. [Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Roma (Italy); Dipartimento di Fisica, Universita di Roma ' Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy (Italy); Arciprete, F.; Balzarotti, A.; Patella, F. [Dipartimento di Fisica, Universita di Roma ' Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy (Italy)

    2012-10-01

    The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

  2. Heat Islands

    Science.gov (United States)

    EPA's Heat Island Effect Site provides information on heat islands, their impacts, mitigation strategies, related research, a directory of heat island reduction initiatives in U.S. communities, and EPA's Heat Island Reduction Program.

  3. Nucleation of GaN/AlN quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adelmann, C; Daudin, B; Oliver, R; Briggs, G; Rudd, R

    2003-10-13

    We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, bidimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, the height and the density of the islands increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth [R. E. Rudd et al., Phys. Rev. Lett. 90, 146101 (2003)].

  4. Red luminescence from strain-induced GaInP quantum dots

    OpenAIRE

    1996-01-01

    The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dotluminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dotluminescenceproperties is investigated. The luminescence intensity ratio of the quantum dot peak to...

  5. Submarine groundwater discharge and solute transport under a transgressive barrier island

    Science.gov (United States)

    Evans, Tyler B.; Wilson, Alicia M.

    2017-04-01

    Many recent investigations of groundwater dynamics in beaches employed groundwater models that assumed isotropic, numerically-convenient hydrogeological conditions. Real beaches exhibit local variability with respect to stratigraphy, sediment grain size and associated topographic profile, so that groundwater flow may diverge significantly from idealized models. We used a combination of hydrogeologic field methods and a variable-density, saturated-unsaturated, transient groundwater flow model to investigate SGD and solute transport under Cabretta Beach, a small transgressive barrier island seaward of Sapelo Island, Georgia. We found that the inclusion of real beach heterogeneity drove important deviations from predictions based on theoretical beaches. Cabretta Beach sustained a stronger upper saline plume than predicted due to the presence of a buried silty mud layer beneath the surface. Infiltration of seawater was greater for neap tides than for spring tides due to variations in beach slope. The strength of the upper saline plume was greatest during spring tides, contrary to recent model predictions. The position and width of the upper saline plume was highly dynamic through the lunar cycle. Our results suggest that field measurements of salinity gradients may be useful for estimating rates of tidally and density driven recirculation through the beach. Finally, our results indicate that several important biogeochemical cycles recently studied at Cabretta Beach were heavily influenced by groundwater flow and associated solute transport.

  6. Islands, Island Studies, Island Studies Journal

    Directory of Open Access Journals (Sweden)

    Godfrey Baldacchino

    2006-05-01

    Full Text Available Islands are sites of innovative conceptualizations, whether of nature or human enterprise, whether virtual or real. The study of islands on their own terms today enjoys a growing and wide-ranging recognition. This paper celebrates the launch of Island Studies Journal in the context of a long and thrilling tradition of island studies scholarship.

  7. On the Correlation Between the Self-Organized Island Pattern and Substrate Elastic Anisotropy

    Science.gov (United States)

    2007-04-01

    energy field Estr on the surface of substrates Iso 001, GaAs 001, GaAs 111, and GaAs 113 due to a buried island is plotted. Furthermore, Fig. 1...distribution where the height is proportional to the number of adatoms per unit area: on the surface of GaAs with strain energy Estr of Iso 001 a, with...anisotropic strain energy Estr of GaAs 001 b, GaAs 111 c, and GaAs 113 d. Different island orderings and patterns red dashed lines

  8. Effect of silicon doping in InGaN/GaN heterostructure grown by MOCVD

    Science.gov (United States)

    Surender, S.; Pradeep, S.; Prabakaran, K.; Singh, Shubra; Baskar, K.

    2017-05-01

    In this work the effect of Si doped InGaN/GaN heterostructure is systematically studied. The n-InGaN /GaN heterostructure are grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD). The heterostructure samples are investigated by structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature Photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. The composition of indium in n-InGaN/GaN heterostructure was calculated as 15.9% using epitaxy smooth fit software. The energy band gap (Eg) of the InGaN epilayer has been calculated as 2.78 eV using vigard's law. PL emission obtained at 446 nm for n-InGaN epilayer. AFM results indicate that the Si doped InGaN/GaN heterostructure has the root mean square (rms) roughness of about 0.59 nm for a scan area of 5×5 µm2 which has island like growth. Moreover, Hall measurements results shows that Si doped InGaN/GaN heterostructure possess carrier concentration of 4.2 × 1018cm-3 and mobility of 257 cm2/V s at room temperature.

  9. Faroe Islands

    DEFF Research Database (Denmark)

    Christoffersen, Lisbet

    2015-01-01

    An update introduction including recent legislative changes on the Folkchurch of the Faroe Islands......An update introduction including recent legislative changes on the Folkchurch of the Faroe Islands...

  10. Galapagos Islands

    Science.gov (United States)

    2002-01-01

    This true-color image of the Galapagos Islands was acquired on March 12, 2002, by the Moderate-resolution Imaging Spectroradiometer (MODIS), flying aboard NASA's Terra satellite. The Galapagos Islands, which are part of Ecuador, sit in the Pacific Ocean about 1000 km (620 miles) west of South America. As the three craters on the largest island (Isabela Island) suggest, the archipelago was created by volcanic eruptions, which took place millions of years ago. Unlike most remote islands in the Pacific, the Galapagos have gone relatively untouched by humans over the past few millennia. As a result, many unique species have continued to thrive on the islands. Over 95 percent of the islands' reptile species and nearly three quarters of its land bird species cannot be found anywhere else in the world. Two of the more well known are the Galapagos giant tortoise and marine iguanas. The unhindered evolutionary development of the islands' species inspired Charles Darwin to begin The Origin of Species eight years after his visit there. To preserve the unique wildlife on the islands, the Ecuadorian government made the entire archipelago a national park in 1959. Each year roughly 60,000 tourists visit these islands to experience what Darwin did over a century and a half ago. Image courtesy Jacques Descloitres, MODIS Land Rapid Response Team at NASA GSFC

  11. Use of surfactants to control island size and density

    Energy Technology Data Exchange (ETDEWEB)

    Merrell, Jason; Liu, Feng; Stringfellow, Gerald B.

    2017-08-15

    Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.

  12. Stranski-Krastanow growth of (112¯2)-oriented GaN/AlN quantum dots

    Science.gov (United States)

    Lahourcade, L.; Valdueza-Felip, S.; Kehagias, T.; Dimitrakopulos, G. P.; Komninou, P.; Monroy, E.

    2009-03-01

    Semipolar GaN(112¯2) deposited on AlN(112¯2) by plasma-assisted molecular-beam epitaxy can follow the Frank-Van der Merwe or the Stranski-Krastanow growth mode as a function of the Ga/N ratio. N-rich grown GaN relaxes elastically at a critical thickness but the resulting GaN islands present multiple crystallographic orientations. In contrast, after deposition of a few two-dimensional GaN monolayers under Ga-rich conditions, a growth interruption in vacuum induces (112¯2)-oriented islanding. Applying this latter procedure, we have synthesized GaN/AlN quantum dot superlattices with reduced internal electric field.

  13. Island Armor

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A new law has been enacted to protect China’s islands from destruction After three rounds of deliberations that began in June 2009, the National People’s Congress (NPC) Standing Committee endorsed the Law of Sea

  14. Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy.

    Science.gov (United States)

    Wang, Y; Ruterana, P; Chen, J; Desplanque, L; El Kazzi, S; Wallart, X

    2012-08-22

    In this paper, the impact of growth parameters on the strain relaxation of highly lattice mismatched (11.8%) GaSb grown on GaP substrate by molecular beam epitaxy has been investigated. The surface morphology, misfit dislocation and strain relaxation of the GaSb islands are shown to be highly related to the initial surface treatment, growth rate and temperature. More specifically, Sb-rich surface treatment is shown to promote the formation of Lomer misfit dislocations. Analysis of the misfit dislocation and strain relaxation as functions of the growth temperature and rate led to an optimal growth window for a high quality GaSb epitaxial layer on (001) GaP. With this demonstrated optimized growth, a high mobility (25,500 cm(2) V (-1) s(-1) at room temperature) AlSb/InAs heterostructure on a semi-insulating (001) GaP substrate has been achieved.

  15. Ligand "Brackets" for Ga-Ga Bond.

    Science.gov (United States)

    Fedushkin, Igor L; Skatova, Alexandra A; Dodonov, Vladimir A; Yang, Xiao-Juan; Chudakova, Valentina A; Piskunov, Alexander V; Demeshko, Serhiy; Baranov, Evgeny V

    2016-09-06

    The reactivity of digallane (dpp-Bian)Ga-Ga(dpp-Bian) (1) (dpp-Bian = 1,2-bis[(2,6-diisopropylphenyl)imino]acenaphthene) toward acenaphthenequinone (AcQ), sulfur dioxide, and azobenzene was investigated. The reaction of 1 with AcQ in 1:1 molar ratio proceeds via two-electron reduction of AcQ to give (dpp-Bian)Ga(μ2-AcQ)Ga(dpp-Bian) (2), in which diolate [AcQ](2-) acts as "bracket" for the Ga-Ga bond. The interaction of 1 with AcQ in 1:2 molar ratio proceeds with an oxidation of the both dpp-Bian ligands as well as of the Ga-Ga bond to give (dpp-Bian)Ga(μ2-AcQ)2Ga(dpp-Bian) (3). At 330 K in toluene complex 2 decomposes to give compounds 3 and 1. The reaction of complex 2 with atmospheric oxygen results in oxidation of a Ga-Ga bond and affords (dpp-Bian)Ga(μ2-AcQ)(μ2-O)Ga(dpp-Bian) (4). The reaction of digallane 1 with SO2 produces, depending on the ratio (1:2 or 1:4), dithionites (dpp-Bian)Ga(μ2-O2S-SO2)Ga(dpp-Bian) (5) and (dpp-Bian)Ga(μ2-O2S-SO2)2Ga(dpp-Bian) (6). In compound 5 the Ga-Ga bond is preserved and supported by dithionite dianionic bracket. In compound 6 the gallium centers are bridged by two dithionite ligands. Both 5 and 6 consist of dpp-Bian radical anionic ligands. Four-electron reduction of azobenzene with 1 mol equiv of digallane 1 leads to complex (dpp-Bian)Ga(μ2-NPh)2Ga(dpp-Bian) (7). Paramagnetic compounds 2-7 were characterized by electron spin resonance spectroscopy, and their molecular structures were established by single-crystal X-ray analysis. Magnetic behavior of compounds 2, 5, and 6 was investigated by superconducting quantum interference device technique in the range of 2-295 K.

  16. The nature and control of morphology and the formation of defects in InGaAs epilayers and InAs/GaAs superlattices grown via MBE on GaAs(100)

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Rajkumar, K.C.; Madhukar, A. (Univ. of Southern California, Los Angeles, CA (USA))

    1991-05-01

    Initial stages of molecular beam epitaxial (MBE) growth of highly mismatched In{sub x}Ga{sub 1-x}As/GaAs(100) have been studied by planar and cross-sectional transmission electron microscopy. For In{sub 0.5}Ga{sub 0.5}As growth, we find drastic differences in morphology obtained by reducing the growth temperature from 475 to 420degC. We also observe differences in morphology between alloy growth and short period superlattice (InAs){sub n}/(GaAs){sub m} (m=1 monolayer, n=2 monoloayers) growth of equivalent effective composition. In the case of growth by formation of large islands, we present direct evidence of strain relief at the island edges and discuss defect formation in these islands. (orig.).

  17. The disintegration of GaSb/GaAs nanostructures upon capping

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Andrew J; Jinyoung, Hwang; Marquis, Emmanuelle A; Smakman, Erwin; Saucer, Timothy W; Rodriguez, Garrett; Hunter, Allen H; Sih, Vanessa; Koenraad, Paul M; Phillips, Jamie D.; Millunchick, Joanna M

    2013-01-01

    Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.

  18. Effect of reactor pressure on the growth rate and structural properties of GaN films

    Institute of Scientific and Technical Information of China (English)

    NI JinYu; HAO Yue; ZHANG JinCheng; YANG LinAn

    2009-01-01

    The effect of reactor pressure on the growth rate,surface morphology and crystalline quality of GaN films grown on sapphire by metalorganic chemical vapor deposition is studied.The results show that as the reactor pressure increases from 2500 to 20000 Pa,the GaN surface becomes rough and the growth rate of GaN films decreases.The rough surface morphology is associated with the initial high temperature GaN islands,which are large with low density due to low adatom surface diffusion under high reactor pressure.These islands prolong the occurrence of 2D growth mode and decrease the growth rate of GaN film.Meanwhile,the large GaN islands with low density lead to the reduction of threading dislocation density during subsequent island growth and coalescence,and consequently decrease the full width at half maximum of X-ray rocking curve of the GaN film.

  19. Crystallization kinetics of Ga metallic nano-droplets under As flux.

    Science.gov (United States)

    Bietti, S; Somaschini, C; Sanguinetti, S

    2013-05-24

    We present an experimental investigation of the crystallization dynamics of Ga nano-droplets under As flux. The transformation of the metallic Ga contained in the droplets into a GaAs nano-island proceeds by increasing the size of a tiny ring of GaAs which is formed just after the Ga deposition at the rim of a droplet. The GaAs crystallization rate depends linearly on the liquid-solid interface area. The maximum growth rate is set by the As flux impinging on the droplet, thus showing an efficient As incorporation and transport despite the predicted low solubility of the As in metallic Ga at the crystallization temperatures.

  20. Transmission electron microscopy of GaN based, doped semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pretorius, A.

    2006-07-01

    This thesis addresses the analysis of GaN based heterostructures with transmission electron microscopy (TEM). Basic properties of the material of interest are introduced in chapter 2. These include the structural and optical properties as well as an introduction to the growth methods used for the samples analysed in this work. In chapter 3 a brief theoretical treatment of TEM is given. As one main topic of this work is the determination of the In concentration in InGaN islands using strain state analysis, a detailed description of the method is given. Chapter 4 describes the results obtained for pyramidal defects present in metalorganic vapour phase epitaxy grown GaN:Mg with high dopant concentration. Based on the experimental results and the well established knowledge that GaN of inverted polarity is present inside the pyramidal defects, a variety of basal plane inversion domain boundary models was set up. From these models, HRTEM images were simulated using the multislice approach, followed by a quantitative comparison to experimentally obtained HRTEM images. Another focus of this work is the analysis of In{sub x}Ga{sub 1-x}N islands grown on GaN presented in chapter 5. Following a literature survey which describes different methods used to obtain In{sub x}Ga{sub 1-x}N islands, the first topic is the distinction of In{sub x}Ga{sub 1-x}N islands and metal droplets, which can form during growth. This is followed by the experimental results of molecular beam epitaxy and metalorganic vapour phase epitaxy grown In{sub x}Ga{sub 1-x}N island and quantum dot samples. (orig.)

  1. InGaAs/GaAs (110) quantum dot formation via step meandering

    Energy Technology Data Exchange (ETDEWEB)

    Diez-Merino, Laura; Tejedor, Paloma [Department of Nanostructures and Surfaces, Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049-Madrid (Spain)

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  2. Beautiful hainan island

    Institute of Scientific and Technical Information of China (English)

    汪伦

    2002-01-01

    Hainan Island is the second largest island in China. It is situated on the Nanhai Sea(South China Sea) and faces Guangdong Province across Qiongzhou Strait (海峡).Hainan Province was established (建立)in 1988. It consists of Hainan Island, Xisha Islands, Zhongsha Islands, Nansha Islands and the vast sea areas around them.Its total area is 340,000 km2.

  3. Incubation time of heterogeneous growth of islands in the mode of incomplete condensation

    Science.gov (United States)

    Dubrovskii, V. G.

    2016-11-01

    The incubation time necessary for the growth of surface islands on heterogeneous nucleation centers to begin has been theoretically analyzed depending on the material gas flow and surface temperature. It is shown that, under heterogeneous growth in the mode of incomplete condensation, the incubation time increases with temperature according to the Arrhenius law and is inversely proportional to the flow, irrespective of the mechanism of diffusion transport to islands. The results obtained have been qualitatively compared with the experimental data on the incubation time for three-dimensional GaN islands arising in the initial stage of self-induced growth of GaN nanowires.

  4. PHYTOPLANKTON - WET WEIGHT and Other Data from UNKNOWN From Long Island Sound from 19520305 to 19591109 (NODC Accession 9000037)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This data set contains two files of nutrient and chlorophyll data for Long Island Sound collected from 1952-59. The data were originally collected by G.A. Riley,...

  5. Hawaiian Island Archipelago

    Science.gov (United States)

    1985-01-01

    The entire Hawaiian Island Archipelago (21.5N, 158.0W) is seen in this single view. The islands are a favorite international resort and tourist attraction drawing visitors from all over the world to enjoy the tropical climate, year round beaches and lush island flora. Being volcanic in origin, the islands' offer a rugged landscape and on the big island of Hawaii, there is still an occasional volcanic eruption of lava flows and steam vents.

  6. Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z. B.; Chen, B.; Wang, Y. B.; Liao, X. Z., E-mail: xiaozhou.liao@sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Lei, W. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Zou, J. [Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia); Ringer, S. P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

    2014-01-13

    Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

  7. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Vdovin, V I [Institute for Chemical Problems of Microelectronics, 119017 Moscow (Russian Federation); Kazakov, I P [PN Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow (Russian Federation); Rzaev, M M [PN Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow (Russian Federation); Burbaev, T M [PN Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow (Russian Federation)

    2002-12-09

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si{sub 1-x}Ge{sub x} (0 {<=} x {<=} 1) buffer layer and a GaAs layer with In{sub y}Ga{sub 1-y}As (y {approx} 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 {mu}m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  8. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    CERN Document Server

    Vdovin, V I; Rzaev, M M; Burbaev, T M

    2002-01-01

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  9. GA-Gammon

    DEFF Research Database (Denmark)

    Irineo-Fuentes, Oscar; Cruz-Cortes, Nareli; Rodriguez-Henriquez, Francisco

    2006-01-01

    of the best board positions during a game. Best GA-Gammon individuals so obtained were tested in separated 5000-game tournaments against Pubeval itself, and Fuzzeval, a fuzzy controller-based player. Our experimental results indicate that the best individuals generated by GA-Gammon show similar performance...

  10. Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy.

    Science.gov (United States)

    Somaschini, Claudio; Bietti, Sergio; Trampert, Achim; Jahn, Uwe; Hauswald, Christian; Riechert, Henning; Sanguinetti, Stefano; Geelhaar, Lutz

    2013-08-14

    We present a novel approach for the growth of GaAs nanowires (NWs) with controllable number density and diameter, which consists of the combination between droplet epitaxy (DE) and self-assisted NW growth. In our method, GaAs islands are initially formed on Si(111) by DE and, subsequently, GaAs NWs are selectively grown on their top facet, which acts as a nucleation site. By DE, we can successfully tailor the number density and diameter of the template of initial GaAs islands and the same degree of control is transferred to the final GaAs NWs. We show how, by a suitable choice of V/III flux ratio, a single NW can be accommodated on top of each GaAs base island. By transmission electron microscopy, as well as cathodo- and photoluminescence spectroscopy, we confirmed the high structural and optical quality of GaAs NWs grown by our method. We believe that this combined approach can be more generally applied to the fabrication of different homo- or heteroepitaxial NWs, nucleated on the top of predefined islands obtained by DE.

  11. Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Timm, R.

    2007-12-14

    In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

  12. GaAs/GaSb nanowire heterostructures grown by MOVPE

    DEFF Research Database (Denmark)

    Jeppsson, Mattias; Dick, Kimberly A.; Wagner, Jakob Birkedal

    2008-01-01

    We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast t...

  13. Shemya Island prehistory

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — The 752 artifacts described in this paper are from 5 sites on Shemya Island. Artifactual evidence suggests the island had a small resident population and was...

  14. and Prince Edward Island

    African Journals Online (AJOL)

    spamer

    -nesting seabirds of the Prince Edward Islands into the 21st century, but only providing the effects of .... too penguins resulted in high losses of eggs and chicks ... Marion Island base. ..... which comes into force three months after five Parties.

  15. Classifying Pacific islands

    Science.gov (United States)

    Nunn, Patrick D.; Kumar, Lalit; Eliot, Ian; McLean, Roger F.

    2016-12-01

    An earth-science-based classification of islands within the Pacific Basin resulted from the preparation of a database describing the location, area, and type of 1779 islands, where island type is determined as a function of the prevailing lithology and maximum elevation of each island, with an island defined as a discrete landmass composed of a contiguous land area ≥1 ha (0.01 km2) above mean high-water level. Reefs lacking islands and short-lived (ocean setting as well as the biological attributes of Pacific islands. It may also be used in spatial assessments of second-order phenomena associated with the islands, such as their vulnerability to various disasters, coastal erosion, or ocean pollution as well as human populations, built infrastructure and natural resources.

  16. Arctic ice islands

    Energy Technology Data Exchange (ETDEWEB)

    Sackinger, W.M.; Jeffries, M.O.; Lu, M.C.; Li, F.C.

    1988-01-01

    The development of offshore oil and gas resources in the Arctic waters of Alaska requires offshore structures which successfully resist the lateral forces due to moving, drifting ice. Ice islands are floating, a tabular icebergs, up to 60 meters thick, of solid ice throughout their thickness. The ice islands are thus regarded as the strongest ice features in the Arctic; fixed offshore structures which can directly withstand the impact of ice islands are possible but in some locations may be so expensive as to make oilfield development uneconomic. The resolution of the ice island problem requires two research steps: (1) calculation of the probability of interaction between an ice island and an offshore structure in a given region; and (2) if the probability if sufficiently large, then the study of possible interactions between ice island and structure, to discover mitigative measures to deal with the moving ice island. The ice island research conducted during the 1983-1988 interval, which is summarized in this report, was concerned with the first step. Monte Carlo simulations of ice island generation and movement suggest that ice island lifetimes range from 0 to 70 years, and that 85% of the lifetimes are less then 35 years. The simulation shows a mean value of 18 ice islands present at any time in the Arctic Ocean, with a 90% probability of less than 30 ice islands. At this time, approximately 34 ice islands are known, from observations, to exist in the Arctic Ocean, not including the 10-meter thick class of ice islands. Return interval plots from the simulation show that coastal zones of the Beaufort and Chukchi Seas, already leased for oil development, have ice island recurrences of 10 to 100 years. This implies that the ice island hazard must be considered thoroughly, and appropriate safety measures adopted, when offshore oil production plans are formulated for the Alaskan Arctic offshore. 132 refs., 161 figs., 17 tabs.

  17. Researching Pacific island livelihoods:

    DEFF Research Database (Denmark)

    Egelund Christensen, Andreas; Mertz, Ole

    2010-01-01

    Small island literature is vast in focus and aim, and is rooted in many different disciplines. The challenge is to find common grounds for researching small islands conceptually and theoretically. The aim of this article is to comment on how to research small islands, including a discussion on co...... and interdisciplinary in focus and link socio-economic and ecological processes of small island societies at temporal and analytical scales....

  18. The Islands, Barbados

    NARCIS (Netherlands)

    Drieman, R.; Hinborch, M.; Monden, M.; Vendrik, E.A.J.

    2009-01-01

    Master project report. In Barbados the problem arose of lack of space for development on the existing shoreline. Therefore the project "The Islands" has been conceptualized. In front of the west coast of Barbados, a group of artificial islands will be created. On the islands there will be space for

  19. Enhanced water splitting with silver decorated GaN photoelectrode

    Science.gov (United States)

    Hou, Y.; Syed, Z. A.; Smith, R.; Athanasiou, M.; Gong, Y.; Yu, X.; Bai, J.; Wang, T.

    2016-07-01

    By means of a cost-effective approach, we demonstrate a GaN-based photoelectrode decorated with self-organized silver nano-islands employed for solar powered hydrogen generation, demonstrating 4 times increase in photocurrent compared with a reference sample without using any silver. Our photoelectrode exhibits a 60% incident photon-to-electron conversion efficiency. The enhanced hydrogen generation is attributed to a significantly increased carrier generation rate as a result of strongly localized electric fields induced by surface plasmon coupling effect. The silver coating also contributes to the good chemical stability of our photoelectrode in a strong alkali electrolyte. This work paves the way for the development of GaN and also InGaN based photoelectrodes with ultra-high solar hydrogen conversion efficiency.

  20. GaN HEMTs

    Science.gov (United States)

    Anderson, Jonathan W.; Lee, Kyoung-Keun; Piner, Edwin L.

    2012-03-01

    Gallium nitride (GaN) has enormous potential for applications in high electron mobility transistors (HEMTs) used in RF and power devices. Intrinsic device properties such as high electron mobility, high breakdown voltage, very high current density, electron confinement in a narrow channel, and high electron velocity in the 2-dimensional electron gas of the HEMT structure are due in large part to the wide band gap of this novel semiconductor material system. This presentation discusses the properties of GaN that make it superior to other semiconductor materials, and outlines the research that will be undertaken in a new program at Texas State University to advance GaN HEMT technology. This program's aim is to further innovate the exceptional performance of GaN through improved material growth processes and epitaxial structure design.

  1. A Phenomenology of Islands

    Directory of Open Access Journals (Sweden)

    Pete Hay

    2006-05-01

    Full Text Available The question is posed: is a coherent theory of islandness – nissology – possible? Faultlines within constructions of islands and islandness are noted. Some of these axes of contestation have remained latent but have the potential to be sharply divisive. Three of the identified faultlines are examined – the nature of the island ‘edge’, the import for questions of island memory and identity of massive inward and outward movements of people, and the appropriation of island ‘realness’ by those for whom ‘island’ best functions as metaphor. A case is made for the excision of the latter from the purview of island studies. Despite apparent irreconcilability within island studies’ emerging faultlines, it is argued that place theory does constitute a theoretical framing that can work for island studies. Following a brief overview of the faultlines that also exist within place studies, it is noted that the difference-respecting and identity focused nature of phenomenology of place is particularly apposite for island studies, and the paper concludes with a consideration of what a phenomenology of islands might look like.

  2. Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

    Science.gov (United States)

    Baumann, V.; Stumpf, F.; Steinl, T.; Forchel, A.; Schneider, C.; Höfling, S.; Kamp, M.

    2012-09-01

    A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 μm along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (λ ˜ 670 nm) are investigated by means of ensemble- and micro-photoluminescence spectroscopy at cryogenic temperatures.

  3. GaSbBi/GaSb quantum well laser diodes

    Science.gov (United States)

    Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

    2017-05-01

    We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

  4. Birds observed at Shemya Island, Aleutian Islands

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This report covers Shemya Island bird surveys. The reports outline migrant bird activity during August 31 to October 3, 1977. The purpose of the study was to survey...

  5. Paradise Islands? Island States and Environmental Performance

    Directory of Open Access Journals (Sweden)

    Sverker C. Jagers

    2016-03-01

    Full Text Available Island states have been shown to outperform continental states on a number of large-scale coordination-related outcomes, such as levels of democracy and institutional quality. The argument developed and tested in this article contends that the same kind of logic may apply to islands’ environmental performance, too. However, the empirical analysis shows mixed results. Among the 105 environmental outcomes that we analyzed, being an island only has a positive impact on 20 of them. For example, island states tend to outcompete continental states with respect to several indicators related to water quality but not in aspects related to biodiversity, protected areas, or environmental regulations. In addition, the causal factors previously suggested to make islands outperform continental states in terms of coordination have weak explanatory power in predicting islands’ environmental performance. We conclude the paper by discussing how these interesting findings can be further explored.

  6. Electrochemical island growth

    Science.gov (United States)

    Guo, Lian

    The ability to independently dictate the shape and crystal orientation of islands in electrocrystallization remains a significant challenge. The main reason for this is that the complex interplay between the substrate, nucleation, and surface chemistry are not fully understood. Here the kinetics of 3D island growth for copper on ruthenium oxide is studied. The small nucleation overpotential leads to enhanced lateral growth and the formation of hexagonal, disk-shaped islands. The amorphous substrate allows the nuclei to achieve the thermodynamically favorable orientation, i.e. a surface normal. Island growth follows power law kinetics in both lateral and vertical directions. At shorter times, the two growth exponents are equal to 1/2 whereas at longer times lateral growth slows down while vertical growth speeds up. Accordingly, a growth mechanism is proposed, wherein the lateral growth of disk-shaped islands is initiated by attachment of Cu adatoms on the ruthenium oxide surface onto the island periphery while vertical growth is initiated by 2D nucleation on the top terrace and followed by lateral step propagation. These results indicate three criteria for enhanced lateral growth in electrodeposition: (i) a substrate that leads to a small nucleation overpotential, (ii) fast adatom surface diffusion on substrate to promote lateral growth, and (iii) preferential anion adsorption to stabilize the basal plane. The surface roughness evolution, during isolated island growth, island coalescence, and continuous film growth, has also been studied as a function of island shape and island density. It is shown that the surface width wsat(l,t) initially follows anomalous scaling in the isolated island growth regime but exhibits normal scaling during the early stages of continuous film growth. Furthermore, the short length scale roughness is dependent primarily on island shape while the long length scale roughness is dependent on island density. Electrochemical deposition of

  7. Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE.

    Science.gov (United States)

    Halder, N; Suseendran, J; Chakrabarti, S; Herrera, Miriam; Bonds, Marta; Browning, Nigel D

    2010-08-01

    Multilayer stacks of quantum dots (QDs) (10 periods) with a combination barrier layer of In0.21Al0.21 Ga0.58As (30 angstroms) and GaAs (70-180 angstroms) are grown by solid source molecular beam epitaxy (MBE) and reflection high-energy electron diffraction (RHEED) has been used for the in situ determination of the duration of dot formation in the QD layers. The increase in the duration of dot formation in the consecutive layers of the QD heterostructure with thinner barrier is attributed to the indium migration towards the defects in the strained QD layers. A thicker GaAs layer at 590 degrees C overgrown on the InAlGaAs is believed to remove the unevenness of the growth front for the subsequent QD layer resulting in good vertical stacking of islands till the final layer of the multilayer heterostructures.

  8. Highly Polarized Electrons from GaAs-GaAsP and InGaAs-AlGaAs Strained Layer Superlattice Photocathodes

    CERN Document Server

    Nakanishi, T; Kuwahara, M; Naniwa, K; Nishitani, T; Okumi, S; Yamamoto, N; Yasui, K

    2004-01-01

    GaAs-GaAsP strained layer superlattice photocathode has been developed for highly polarized electron beams. This cathode achieved a maximum polarization of 92% with a quantum efficiency of 0.5%. Criteria for achieving the highest polarization together with high quantum efficiency using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra of GaAs-AlGaAs, InGaAs-AlGaAs and GaAs-GaAsP superlattice structures.

  9. Tanzania - Mafia Island Airport

    Data.gov (United States)

    Millennium Challenge Corporation — The evaluation design and subsequent data gathering activities will address the following key research questions: a) Has the Mafia Island Airport Upgrade Project...

  10. 2015 Lowndes County (GA) Lidar

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — TASK NAME: NOAA OCM Lidar for Lowndes County, GA with the option to Collect Lidar in Cook and Tift Counties, GA Lidar Data Acquisition and Processing Production Task...

  11. Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Saidi, C.; Chaaben, N.; Laifi, J.; Sekrafi, T. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Tottereau, O. [Centre de Recherche sur l’Hétéro-Epitaxie et Ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne, Sophia Antipolis (France); Bchetnia, A.; El Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia)

    2015-03-15

    Highlights: • We examined the Bi doping effect on GaN layers properties, grown by LT-MOVPE. • No obvious dependence of growth rate with TMBi flow rate. • TMBi flow rate addition resulted in a reduction of reflectivity oscillation mean value. • We note the appearance of islands and columns containing Bi on layers surface. • While there is a decrease in surface roughness suggesting Bi surfactant effect. - Abstract: Undoped GaN and diluted GaNBi alloys were grown on (0 0 0 1) sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 480 °C. By using in-situ laser reflectometry, it is found that the increase of TMBi flow rate leads to a reduction of the average value of reflectivity oscillations. Scanning electron microscopy (SEM) images gave a clear observation of the TMBi increasing amount effect on the surface morphology. The appearance of different structure (islands and columns) on GaN surface could be responsible to the reduction of the reflectivity oscillations average value. The energy dispersive X-ray (EDX) analysis showed that the observed structures were only composed of Bi compared to the flat GaN surface. Moreover, the surface morphology between islands and columns is improved when we increase the TMBi flow rate. This improvement is consistent with the decrease of root mean square (RMS) roughness, as measured by atomic force microscopy (AFM)

  12. Coulomb excitation of Ga-73

    NARCIS (Netherlands)

    Diriken, J.; Stefanescu, I.; Balabanski, D.; Blasi, N.; Blazhev, A.; Bree, N.; Cederkaell, J.; Cocolios, T. E.; Davinson, T.; Eberth, J.; Ekstrom, A.; Fedorov, D. V.; Fedosseev, V. N.; Fraile, L. M.; Franchoo, S.; Georgiev, G.; Gladnishki, K.; Huyse, M.; Ivanov, O. V.; Ivanov, V. S.; Iwanicki, J.; Jolie, J.; Konstantinopoulos, T.; Kroell, Th.; Kruecken, R.; Koester, U.; Lagoyannis, A.; Lo Bianco, G.; Maierbeck, P.; Marsh, B. A.; Napiorkowski, P.; Patronis, N.; Pauwels, D.; Reiter, P.; Seliverstov, M.; Sletten, G.; Van de Walle, J.; Van Duppen, P.; Voulot, D.; Walters, W. B.; Warr, N.; Wenander, F.; Wrzosek, K.

    2010-01-01

    The B(E2; I-i -> I-f) values for transitions in Ga-71(31)40 and Ga-73(31)42 were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of Ga-71,Ga-73 at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were dete

  13. MOCVD growth of GaN on Si through novel substrate modification techniques

    Science.gov (United States)

    Gagnon, Jarod C.

    GaN is a semiconductor material with great potential for use in high power electronics and optoelectronics due to the high electron mobility, high breakdown voltage, high thermal stability, and large direct bandgap of GaN. Si is a desirable substrate material for GaN heteroepitaxy due to the low cost of production, large wafer sizes available, and current widespread use in the electronics industry. The growth of GaN/Si devices suffers from the lattice and CTE mismatches between GaN and Si and therefore multiple methods of strain reduction have been employed to counter these effects. In this work we presented two novel methods of substrate modification to promote the growth of device quality GaN on Si. Initial work focused on the implantation of AlN/Si(111) substrates with N+ ions below the AlN/Si(111) interface. A reduction in the initial compressive stress in GaN films as well as the degree of tensile stress generation during growth was observed on implanted samples. Optical microscopy of the GaN surfaces showed reduced channeling crack density on implanted substrates. Transmission electron microscopy (TEM) studies showed a disordered layer in the Si substrate at the implantation depth which consisted of a mixture of polycrystalline and amorphous Si. Evidence was provided to suggest that the disordered layer at the implantation depth was acting as a compliant layer which decoupled the GaN film from the bulk Si substrate and partially accommodated the tensile stress formed during growth and cooling. A reduction in threading dislocation (TD) density on ion implanted substrates was also observed. Additional studies showed that by increasing the lateral size of AlN islands, the tensile growth stress and TD density in GaN films on ion implanted substrates could be further reduced. XRD studies showed an expansion of the AlN lattice on implanted substrates with larger lateral island sizes. The final tensile growth stress of films on implanted substrates was further

  14. St. Vincent Island Tour

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This letter, written by Charles Marks who lived on St. Vincent Island as a child, notes the changes he saw in the island when he visited in 1981. He notes that the...

  15. Marine and Island Ecology.

    Science.gov (United States)

    Stephens, Lawrence J.; And Others

    1988-01-01

    Describes an ecology course which provides students with an opportunity to observe aquatic and terrestrial life in the Bahamas. States that students learn scientific methodology by measuring physical and chemical aspects of the island habitats. Provides information on the island, course description and objectives, transportation, facilities, and…

  16. Effect of thickness on the microstructure of GaN films on Al203 (0001) by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Liu Ying-Ying; Zhu Jun; Luo Wen-Bo; Hao Lan-Zhong; Zhang Ying; Li Yan-Rong

    2011-01-01

    Heteroepitaxia1l GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy.The growth processes are in-situ monitored by reflection high energy electron diffraction.It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness.This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns.Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm.The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode.The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes.The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.

  17. Island-trapped Waves, Internal Waves, and Island Circulation

    Science.gov (United States)

    2015-09-30

    Island-trapped waves , internal waves , and island circulation T. M. Shaun Johnston Scripps Institution of Oceanography University of California...topography. As strong flows encounter small islands, points, and submarine ridges, it is expected that wakes, eddies, and arrested internal lee waves ...form drag, lee waves , eddy generation) over small-scale topographic features and (ii) fundamentally nonlinear processes (turbulent island wakes

  18. TMR study of GaMnAs/AlGaAs:Be/GaMnAs trilayers

    Science.gov (United States)

    Hagmann, Joseph; Liu, Xinyu; Dobrowolska, Malgorzata; Furdyna, Jacek; Yoo, Taehee; Khym, Sungwon; Lee, Sanghoon

    2011-03-01

    GaMnAs/GaAs:Be/GaMnAs trilayers have recently demonstrated antiferromagnetic (AFM) coupling between the two ferromagnetic (FM) layers, mediated by holes in the spacer layer. In this work, GaMnAs/ Al x Ga 1-x :Be/GaMnAs trilayer samples with varying Al concentrations were fabricated into magnetic tunnel junction (MTJ) devices with range of pillar diameters to measure tunneling magnetoresistance (TMR) under various conditions. SQUID measurements were use to measure the magnetization of the samples, including switching fields for parallel and antiparallel magnetization alignments of the FM layers. TMR was observed in the sample with Al 0.22 Ga 0.78 As:Be spacer, but was massively suppressed in the samples with lower Al content. The presence of holes in the spacer layer is shown to suppress TMR. This illustrates the difference in conditions for TMR and for AFM interlayer coupling. Supported by NSF Grant DMR-1005851 and OISE-1015458.

  19. The 2D-3D growth transition in metamorphic InAs/InGaAs quantum dots

    OpenAIRE

    Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola

    2011-01-01

    Self-assembled metamorphic InAs/InGaAs quantum dots (QD) are actively investigated for the extension of light emission towards 1.55 ?m in GaAs-based devices [1-2] and for the control of QD spatial arrangement without patterning [3]. However, this system presents many relevant differences from the mainstream InAs/GaAs pseudomorphic one. While optical and structural properties have been studied [4], less attention has been devoted to the physical process of island nucleation and growth on metam...

  20. Editorial : islands : objects of representation

    OpenAIRE

    Baldacchino, Godfrey

    2005-01-01

    In this article, Baldacchino tries to define what is an island and what makes an island. Insularity is a diverse experience ranging from the remoteness of Easter Island in the Pacific to the more international and globalized islands of the Western world.

  1. Environments of Ga in MFI-type Ga-silicates and their catalytic performance; MFI gata Ga-silicate chu no Ga no sonzai jotai to shokubai seino

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, H.; Takiyama, Y.; Higashida, K.; Otsuka, S.; Kishida, M.; Wakabayashi, K. [Kyushu University, Fukuoka (Japan); Shoji, H. [Maruzen Petrochemical Co. Ltd., Chiba (Japan)

    1998-07-01

    MFI-type Ga-silicates (GaS) of varying atomic Si/Ga ratio are synthesized from the gel stocks, to compare them one another for their properties and C4H10 conversion performance. GaS (M) synthesized by the Mobil method shows a broader Ga-MASNMR spectral peak relevant to the GaO4 tetrahedron and lower unit cell increase rate, when it contains a high proportion of Ga, than GaS (A) synthesized by the alkoxide method. It is therefore considered that GaS (M) has an increased content of the GaO4 tetrahedron of low symmetry, as Ga content increases. GaS (M) loses a larger quantity of Ga eluted out as a result of HCl treatment than GaS (A), indicating that the former contains the GaO4 tetrahedron of low symmetry under a less stable condition. GaS (M) gives a higher aromatic hydrocarbon yield in the C4H10 conversion than GaS (A), as its Ga content increases. This results from difference between their dehydrogenation performances, indicating that Ga in the GaO4 tetrahedron of lower symmetry has a higher dehydrogenation performance. 19 refs., 6 figs., 3 tabs.

  2. Heat Island Compendium

    Science.gov (United States)

    Heat islands can be mitigated through measures like planting trees and vegetation, installing green roofs and cool roofs, and using cool pavements. The compendium describes all of these strategies and shows how communities around the country are being used

  3. Nunivak Island muskox studies

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This report covers the Nunivak Island muskox, summarizing the carrying capacity and age and sex ratios. Recommendations are attached for muskox management.

  4. Melville Island, Australia

    Science.gov (United States)

    1992-01-01

    Melville Island, just off the coast of Darwin, Northern Territory, Australia (11.5S, 131.0E) is a sparsely inhabited tropical island with heavy woodland concentrations. The widespread and prominant smoke plumes were most likely set to renew pasture under open canopy woodland. Soil erosion is almost non- existant as can be seen by the clear and clean river flow. The offshore sediments are coastal current borne deposits from King Sound to the west.

  5. Imaging of InGaN inhomogeneities using visible aperturelessnear-field scanning optical microscope

    Energy Technology Data Exchange (ETDEWEB)

    Stebounova, Larissa V.; Romanyuk, Yaroslav E.; Chen, Dongxue; Leone, Stephen R.

    2007-06-14

    The optical properties of epitaxially grown islands of InGaN are investigated with nanometer-scale spatial resolution using visible apertureless near-field scanning optical microscopy. Scattered light from the tip-sample system is modulated by cantilever oscillations and detected at the third harmonic of the oscillation frequency to distinguish the near-field signal from unwanted scattered background light. Scattered near-field measurements indicate that the as-grown InGaN islanded film may exhibit both inhomogeneous In composition and strain-induced changes that affect the optical signal at 633 nm and 532 nm. Changes are observed in the optical contrast for large 3D InGaN islands (100's of nm) of the same height. Near-field optical mapping of small grains on a finer scale reveals InGaN composition or strain-induced irregularities in features with heights of only 2 nm, which exhibit different near-field signals at 633 nm and 532 nm incident wavelengths. Optical signal contrast from topographic features as small as 30 nm is detected.

  6. Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure

    Science.gov (United States)

    Moneger, S.; Qiang, H.; Pollak, Fred H.; Noble, T. F.

    1995-10-01

    Using contactless electroreflectance at 300 and 77K, we have studied the inter-subband transitions from a GaAlAs/InGaAs/GaAs/GaALAs step quantum well structure (small well inside a large well) consisting of two layers A (InxGa1-xAs) and B (GaAs) with widths LA and LB, respectively, bounded by two thick barrier regions of Gax AlyAs. By comparison of the observed spectral features with an envelope function calculation, including the effects of strain, we have been able to characterize the potential profile of the structure, i.e., LA, LB, x, and y. There is very good agreement between experiment and the intended materials param-eters. Such configurations are of considerable importance since (a) they form the basis for pseudomorphic high electron mobility transistors, and (b) also have applications in optoelectronics due to their large Stark shifts.

  7. Nucleation phenomena during molecular beam epitaxy of GaN observed by line-of-sight quadrupole mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Koblmueller, G.; Averbeck, R.; Riechert, H. [Infineon Technologies AG, Corporate Research Photonics, Otto-Hahn-Ring 6, 81739 Munich (Germany); Pongratz, P. [Vienna University of Technology, Institute of Solid State Physics, Wiedner Hauptstrasse 8-10, 1040 Vienna (Austria)

    2002-12-16

    We investigate nucleation and growth phenomena during molecular beam epitaxy of GaN on sapphire, 6H-SiC and GaN templates using in situ line-of-sight quadrupole mass spectrometry. Moreover, this method allows the quantitative study of nucleation phenomena by monitoring desorption processes. Heteroepitaxial growth of GaN on sapphire and 6H-SiC faces a high energy barrier to nucleation giving rise to a substantial Ga desorption during the initial phase of nucleation. The amount of initial Ga desorption in heteroepitaxy is independent of the chosen substrate material and is as high as 8 {+-} 1.5 nm equivalent GaN thickness. Once critical-sized islands have nucleated they grow three-dimensional (3D) leading to a quadratic increase of the GaN coverage and finally to a steady growth rate after coalescence, as also determined by Rutherford backscattering and atomic force microscopy. In contrast, homoepitaxy on Ga- and N-face GaN templates is distinguished by immediate nucleation. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  8. Si上GaN研究

    Institute of Scientific and Technical Information of China (English)

    陈裕权

    2004-01-01

    <正> 亚琛电磁研究所订购了一台Aixtron公司的AIX200/4 RF—S设备。这台设备将用来研究基于Si衬底的GaN淀积。预计低成本的Si衬底与GaN结构相结合会大大影响未来高功率RF器件的价格。亚琛电磁研究所将用AIX 200/4 RF—S设备淀积高品质的AlGaN/GaN层和器件

  9. Turning the Tables: Double Benefits Attained from Training HBCU Students to Teach Geosciences in African-American Communities

    Science.gov (United States)

    Pride, C. J.; Olsen, M. M.

    2004-12-01

    To make the greatest impact on African-American participation in the geosciences it is most efficient to bring programs designed to recruit future geoscientists to neighborhoods, campuses, and communities where African-Americans are actually in the majority rather than the minority. The "Natural History Interpretation Training Program" sponsored by SE-COSEE (NSF), SSU and SINERR did just that and impacted two generations of students in coastal Georgia in the process. In the first implementation of this program, ten HBCU science majors participated in an intensive week-long training program on coastal ecosystems, outdoor education, and regional internship/employment opportunities. The training session was followed by the planning and implementation of a two-day science camp for the youth of Sapelo Island, GA in which the undergraduates taught 15 children of Gullah/Geechee heritage aged 6 to 14 about the geology and ecology of their barrier island home. Key components to successfully recruiting undergraduate participants were to coordinate training activities around the college schedule to accommodate students who needed to enroll in summer courses and to base acceptance into the training program on interest rather than GPA. We facilitated the participation of campers by holding the camp on Sapelo Island, providing transportation, and charging no fees. Having HBCU students teach younger minority students served multiple purposes. It inspired the undergraduates to further their studies in science, to explore internship opportunities, and to consider careers in science education. For some it provided an opportunity to review and master material from past courses and inspired confidence in their approach to future course work. The program also piqued the curiosity of Sapelo Island youth so that they would further explore the science of their island home and, hopefully, will consider college attendance and majoring in the geosciences a natural path to follow. HBCU

  10. Effects of RF plasma parameters on the growth of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

    CERN Document Server

    Shim Kyu Ha; Kim, K H; Hong, S U; Cho, K I; Lee, H G; Kim, J

    1999-01-01

    The effects of rf plasma power on the structural/optical properties of GaN-based nitride epilayers grown by plasma-assisted molecular beam epitaxy have been investigated. Atomic force microscopy and high-resolution x-ray diffraction analyses revealed that the sharp interface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N/GaN heterostructures could be obtained by suppressing the surface roughening at high rf power. photoluminescence data suggest that the formation of damaged subsurface due to energetic particles was alleviated in the InGaN growth in comparison with the GaN growth. In our experimental set-up, the rf power of 400 W appeared to properly suppress the 3D island formation without causing defects at the subsurface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N. The phenomena associated with the indium incorporation could be explained by an inequality with two kinetic processes of the surface diffusion and the plasma stimulated desorption.

  11. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  12. Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

    Directory of Open Access Journals (Sweden)

    Frigeri C

    2010-01-01

    Full Text Available Abstract We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 107 to 109 cm−2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III–V quantum nanostructures directly on silicon substrate.

  13. Robust AlGaN/GaN MMIC Receiver Components

    NARCIS (Netherlands)

    Heijningen, M. van; Janssen, J.P.B.; Vliet, F.E. van

    2009-01-01

    Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch

  14. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.

    2013-10-02

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

  15. Adsorbate interactions on the GaN(0001) surface and their effect on diffusion barriers and growth morphology.

    Science.gov (United States)

    Chugh, Manjusha; Ranganathan, Madhav

    2017-01-18

    Studying the adsorbate interactions on a surface helps in understanding the growing surface morphologies and calculating the effective surface diffusion barriers. We study the interaction between Ga-Ga, N-N and Ga-N adatom pairs on the polar GaN(0001) surface using ab initio calculations based on density functional theory. The interaction energy between two adatoms on the surface does not seem to follow definite trends with increasing distance between the adatoms. The presence of a number of possible reconstructions on clean GaN(0001) and periodic effects due to the finite size complicate the analysis of the interactions. Various components of the total interaction energy are separated. We find that there is a large substrate lattice distortion caused due to Ga and N adatoms. The resulting elastic interaction is a major component of the interactions between the adatoms on the GaN(0001) surface. The dipolar interaction is much smaller in magnitude. We also evaluate the component of the interaction energy due to the substrate-mediated electronic interactions. The barriers for surface hopping of adatoms are significantly modified in the presence of other adatoms. We identify several possible surface hopping processes for Ga and N adatoms and calculate their barriers. In particular, we find that the N adatom has a lower barrier to move to an adjoining site on the other side of a neighboring Ga adatom. Kinetic Monte Carlo simulations are performed to see the effect of adatom interactions on the growing surface morphologies of GaN(0001). At the submonolayer growth stage, the fast diffusion of N adatoms located near Ga adatoms leads to more regular island features. In this way, we illustrate the role of adatom interactions in the initial surface nucleation and the morphologies of the growing GaN(0001) film.

  16. DLTS measurements on GaSb/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hoegner, Annika; Nowozin, Tobias; Marent, Andreas; Bimberg, Dieter [Institut fuer Festkoerperphysik, TU Berlin (Germany); Tseng, Chi-Che [Institute of Photonics Technologies, NTHU (China); Lin, Shih-Yen [Institute of Optoelectronic Sciences, NTOU (China)

    2010-07-01

    Memory devices based on hole storage in self-organized quantum dots offer significant advantages with respect to storage time and scalability. Recently, we demonstrated a first prototype based on InAs/GaAs quantum dots at low temperatures. To enable feasible storage times at room temperature the localisation energy of the quantum dots has to be increased by using other material systems. A first step in this direction is the use of GaSb quantum dots within a GaAs matrix. We have characterized self-organized GaSb/GaAs quantum dots embedded into a n{sup +}p-diode structure. DLTS measurements on hole emission were conducted and yield a strong peak from which a mean emission energy of about 400 meV can be extracted. The reference sample without the quantum dots (containing only the wetting layer) shows no such peak.

  17. Growth and Optimization of 2 Micrometers InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

    Science.gov (United States)

    2013-08-01

    optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/ AlGaAs distributed Bragg...cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved... optically pumped vertical- external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/ AlGaAs distri- buted Bragg

  18. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-06-15

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  19. Dragonflies of Polillo Island, Philippines

    OpenAIRE

    Villanueva, Reagan Joseph T.

    2010-01-01

    Polillo is a small group of island (27 islands in total) east of central Luzon (Figure 1). It is made up of four main island viz. Polillo I, Patnanungan I, Jomalig I and Palasan I and several islets. This island group has relatively flat to gentle sloping terrain and the highest point is only 300 m asl (Mt. Maluhod) in Polillo Island (ca 700 km²) which is the largest in the group and the third largest island in greater Luzon biogeographic region.

  20. The nucleation of HCl and Cl{sub 2}-based HVPE GaN on mis-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bohnen, Tim; Dreumel, Gerbe W.G. van; Enckevort, Willem J.P. van; Ashraf, Hina; Jong, Aryan E.F. de; Hageman, Paul R.; Vlieg, Elias [IMM, Radboud University, Nijmegen (Netherlands); Weyher, Jan L. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

    2010-07-15

    The nucleation of both classic HCl-based and novel Cl{sub 2{sup -}} based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl{sub 2}in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for the growth of much thicker wafers than HCl-based HVPE. Morphological SEM surface studies of the HCl-based HVPE sample surface show that at 600 C a nanocrystalline layer is deposited on the sapphire. During the subsequent annealing phase, the morphology changes to a {mu}m-sized island structure. During overgrowth at 1080 C, the islands coalesce. Small voids or pinholes are then formed in between the coalescing GaN islands. These pinholes lead to numerous pits on the surface of the GaN at thicknesses of 5 {mu}m. The pits disappear during continued overgrowth and can no longer be found on the surface, when the GaN film reaches a thickness of 45 {mu}m. This particular coalescence mechanism also applies to Cl{sub 2}-based HVPE GaN on sapphire (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Ivestigation of an InGaN - GaN nanowire heterstructure

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich; Gotschke, Tobias; Stoica, Toma; Calarco, Raffaella; Gruetzmacher, Detlev [Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH, Juelich (Germany); JARA-Fundamentals of Future Information Technology, Juelich (Germany); Sutter, Eli; Ciston, Jim [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY (United States); Cusco, Ramon; Artus, Luis [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Barcelona, Catalonia (Spain); Kremling, Stefan; Hoefling, Sven; Worschech, Lukas [University Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wuerzburg (Germany)

    2011-07-01

    InGaN/GaN nanowire (NW) heterostructures grown by molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multi-faceted InGaN cap wrapping the top part of the GaN NW. Transmission electron microscopy images taken from different parts of a InGaN/GaN nanowire show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it. Photoluminescence spectra of these heterostructure NW ensembles show an emission peak at 2.1 eV. However, {mu}-PL spectra measured on single nanowires reveal much sharper luminescence peaks. A Raman analysis reveals a variation of the In content between 20 % and 30 %, in agreement with PL and TEM investigations.

  2. Seal Island and Franklin Island National Wildlife Refuges Trip Report

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This is a summary of visits to both Seal Island National Wildlife Refuge and Franklin Island National Wildlife Refuge on August 14, 15, 16, 1982.

  3. Prostatic uptake of Ga-67

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, W.T.; Rosen, P.R.; Weiland, F.L.; Ritchey, M.L.

    1984-08-01

    Midline activity low in the pelvis seen on Ga-67 scans is frequently attributed to colonic excretion of radionuclide. Two cases of infectious prostatitis with focal uptake of Ga-67 within the prostate gland are described. A technique of using limited quantities of barium administered by enema and appropriate positional imaging, which localized pelvic activity to the prostate, is described.

  4. Islands of Astronomy

    Directory of Open Access Journals (Sweden)

    Godfrey Baldacchino

    2009-05-01

    Full Text Available A global review of islands and their connections with astronomy throughout history up to the contemporary times suggests eight compelling, distinct yet interlocking reasons why islands have been and remain so important to astronomy and astronomers. Islands constitute favourable locations for various types of astronomy-related activities: from tracking satellites and monitoring significant celestial events, to providing exceptional locations to jurisdictions with mandated dark and unpolluted skies. They appeal for their favourable longitude and (especially southern latitude, as well as for their disposition towards the conditions that the scientific community may expect in an ideal world: relatively clear viewing conditions from a secure, self-contained platform that is, however, endowed with connectivity. This article is written as a contribution to the International Year of Astronomy (2009.

  5. Small Island Visitor Attractions

    Directory of Open Access Journals (Sweden)

    Haven Allahar

    2015-03-01

    Full Text Available This article proposes a process framework for developing and managing visitor attractions (VA in small island developing states with Trinidad and Tobago, a two-island state in the Caribbean, as the case study. An extensive literature review was conducted, supported by field observations, individual depth interviews, and small and large focus group meetings. The process framework identified four sets of processes: national policy formulation and legislation; inventory, classification, evaluation, and ranking of VA; general operations management involving project management activities; and site specific activities of development, operations, and maintenance. The value of the framework lies in the fact that no similar framework applicable to small islands was covered in the literature and validation was obtained from a panel of experts and a cross section of tourism stakeholders in Tobago.

  6. Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes: tubes, spirals, and curved sheets.

    Science.gov (United States)

    Mei, Yongfeng; Thurmer, Dominic J; Deneke, Christoph; Kiravittaya, Suwit; Chen, Yuan-Fu; Dadgar, Armin; Bertram, Frank; Bastek, Barbara; Krost, Alois; Christen, Jürgen; Reindl, Thomas; Stoffel, Mathieu; Coric, Emica; Schmidt, Oliver G

    2009-07-28

    Ultrathin AlN/GaN crystalline porous freestanding nanomembranes are fabricated on Si(111) by selective silicon etching, and self-assembled into various geometries such as tubes, spirals, and curved sheets. Nanopores with sizes from several to tens of nanometers are produced in nanomembranes of 20-35 nm nominal thickness, caused by the island growth of AlN on Si(111). No crystal-orientation dependence is observed while releasing the AlN/GaN nanomembranes from the Si substrate indicating that the driving stress mainly originates from the zipping effect among islands during growth. Competition between different relaxation mechanisms is experimentally revealed for different nanomembrane geometries and well-described by numerical calculations. The cathodoluminescence emission from GaN nanomembranes reveals a weak peak close to the GaN bandgap, which is dramatically enhanced by electron irradiation.

  7. Local Surface Potential of GaN Nanostructures Probed by Kelvin Force Microscopy

    Institute of Scientific and Technical Information of China (English)

    GU Xiao-Xiao(顾骁骁); HUANG Da-Ming(黄大鸣); MORKOC Hadis

    2003-01-01

    We have measured the fluctuation in local surface potential of GaN epitaxial films having two different types of nanostructure, as-grown islands or, etched pits, by Kelvin probe force microscopy. We found that the perimeters of as-grown islands and the internal walls of, etched pits have lower surface potential as compared with the asgrown c-plane. The results show that the crystallographic facets tilted with respect to c-plane have higher work function and are electrically more active than c-surface.

  8. Long Island Solar Farm

    Energy Technology Data Exchange (ETDEWEB)

    Anders, R.

    2013-05-01

    The Long Island Solar Farm (LISF) is a remarkable success story, whereby very different interest groups found a way to capitalize on unusual circumstances to develop a mutually beneficial source of renewable energy. The uniqueness of the circumstances that were necessary to develop the Long Island Solar Farm make it very difficult to replicate. The project is, however, an unparalleled resource for solar energy research, which will greatly inform large-scale PV solar development in the East. Lastly, the LISF is a superb model for the process by which the project developed and the innovation and leadership shown by the different players.

  9. Takarajima: A Treasured Island

    Directory of Open Access Journals (Sweden)

    Philip Hayward

    2014-06-01

    Full Text Available This article examines the manner in which local identity can be constructed on small islands from the selective prioritisation and elaboration of exogenous elements that become localised by this process and can subsequently function as a brand within contemporary tourism markets. The particular analysis of identity motifs on Takarajima island that we expound examines aspects of the relationships between folklore and contemporary media and references contemporary debates concerning archaeology’s interface with folklore and popular culture in the context of (non-scientific ‘treasure hunting’.

  10. Sakhalin Island terrain intelligence

    Science.gov (United States)

    ,

    1943-01-01

    This folio of maps and explanatory tables outlines the principal terrain features of Sakhalin Island. Each map and table is devoted to a specialized set of problems; together they cover the subjects of terrain appreciation, climate, rivers, water supply, construction materials, suitability for roads, suitability for airfields, fuels and other mineral resources, and geology. In most cases, the map of the island is divided into two parts: N. of latitude 50° N., Russian Sakhalin, and south of latitude 50° N., Japanese Sakhalin or Karafuto. These maps and data were compiled by the United States Geological Survey during the period from March to September, 1943.

  11. Island in the Air

    DEFF Research Database (Denmark)

    Simonsen, Dorthe Gert

    2017-01-01

    mobility and convert the sky into a sovereign territory was especially pronounced in Britain. But the challenge of creating a sovereign space out of mobile and transparent air was an intricate problem both in legal and practical terms. This article shows how geopolitical interests called for an upward...... extension of the Island Kingdom, extrapolating its coastal borders into the sky. However, even as Parliament passed the Aerial Navigation Act in 1913, this legal construction of an island in the air could not endure the agency of airplanes. The formation of airspace, I argue, is a history particularly well...

  12. Archaeoastronomy of Easter Island

    Science.gov (United States)

    Edwards, Edmundo

    Astronomer priests or "skywatchers" on Easter Island lived in stone towers that were used as observatories and built stone markers in the periphery that indicated the heliacal rising of certain stars that served to indicate the arrival of marine birds, turtles, the offshore fishing season, and times for planting and harvest. Petroglyphs related to such sites depict outriggers, fishhooks, pelagic fish, and turtles and supposedly represented a star map. In this chapter, we analyze a set of such skywatchers dwellings, and stone markers located upon the North coast of Easter Island that have astronomic orientations, its related petroglyphs, and the relations between these directions with their yearly activities and their ritual calendar.

  13. Chatham Islands Climate Change

    Energy Technology Data Exchange (ETDEWEB)

    Mullan, B.; Salinger, J.; Thompson, C.; Ramsay, D.; Wild, M.

    2005-06-15

    This brief report provides guidance on climate change specific to the Chatham Islands, to complement the information recently produced for local government by the Ministry for the Environment in 'Climate Change Effects and Impacts Assessment: A guidance manual for Local Government in New Zealand' and 'Coastal Hazards and Climate Change: A guidance manual for Local Government in New Zealand'. These previous reports contain a lot of generic information on climate change, and how to assess associated risks, that is relevant to the Chatham Islands Council.

  14. 1957 Aleutian Islands, USA Images

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The magnitude 8.6 (Mw) earthquake occurred south of the Andreanof Islands, in the Aleutian Islands. It generated an 8-meter tsunami that did great damage on Adak...

  15. Gulf Island National Wildlife Refuges

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This document provides a brief history and describes physical features of the Gulf Island National Wildlife Refuges. The Gulf Island National Wildlife Refuges...

  16. Islanded operation of distribution networks

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report summarises the results of a study assessing the benefits and risks to distribution network of generator islanding and examining the technical, commercial and regulatory changes required to facilitate the operation of islanding. The background to the study is traced, and details are given of a literature review, the technical criteria for operating sections of the network in islanding mode, and the impact of islanding on trading. Case studies and a detailed implementation plan, data acquisition, and commercial incentives are discussed.

  17. 31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

    Directory of Open Access Journals (Sweden)

    Campesato Roberta

    2017-01-01

    Full Text Available We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE and metal-organic chemical vapour deposition (MOCVD processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide bottom junction grown on a GaAs (Gallium Arsenide substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

  18. Observation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes

    Science.gov (United States)

    Rosa, Barbara L. T.; Marçal, Lucas A. B.; Ribeiro Andrade, Rodrigo; Dornellas Pinto, Luciana; Rodrigues, Wagner N.; Lustoza Souza, Patrícia; Pamplona Pires, Mauricio; Wagner Nunes, Ricardo; Malachias, Angelo

    2017-07-01

    In this work we attempt to directly observe anisotropic partial relaxation of epitaxial InAs islands using transmission electron microscopy (TEM) and synchrotron x-ray diffraction on a 15 nm thick InAs:GaAs nanomembrane. We show that under such conditions TEM provides improved real-space statistics, allowing the observation of partial relaxation processes that were not previously detected by other techniques or by usual TEM cross section images. Besides the fully coherent and fully relaxed islands that are known to exist above previously established critical thickness, we prove the existence of partially relaxed islands, where incomplete 60° half-loop misfit dislocations lead to a lattice relaxation along one of the directions, keeping a strained lattice in the perpendicular direction. Although individual defects cannot be directly observed, their implications to the resulting island registry are identified and discussed within the frame of half-loops propagations.

  19. Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

    Directory of Open Access Journals (Sweden)

    Jun-Yong Lu

    2011-09-01

    Full Text Available In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111 substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of E2H and A1 (LO phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.

  20. Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions

    Science.gov (United States)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Botchkarev, Andrei E.; Nelson, Nicole N.; Fahmi, M. M. E.; Griffin, James A.; Khan, Arif; Noor Mohammad, S.; Johnstone, D. K.; Bublik, V. T.; Chsherbatchev, K. D.; Voronova, M. I.

    2002-12-01

    Interface properties of dilute slightly lattice mismatched GaAsN/GaAs (0.35 at.% N) and closely lattice matched InGaAsN (1 at.% In, 0.35 at.% N) heterojunctions (HJs) were studied by means of capacitance-voltage profiling, deep levels transient spectroscopy (DLTS) and current-voltage measurements. It is found that the lattice matched HJs show no electrical breakdown when the space charge region crosses the interface. The carrier concentration profiles in such HJ show, as expected, the accumulation region on the low-bandgap side and the depletion region on the high-bandgap side of the HJ. This is not the case for the GaAsN/GaAs (GaAsN layer on top) and the GaAs/GaAsN (GaAs layer on top) HJ. The density of deep traps in GaAsN, InGaAsN films and in GaAs films grown on GaAsN underlayers was very much higher than in epitaxial GaAs films. The dominant deep centers were the EL6 and the EL3 electron traps. The interface regions of the GaAs/GaAsN and the InGaAsN/GaAs HJs were shown to be enriched by EL3 traps, while for the GaAsN/GaAs HJ those regions were enriched by EL6 traps which was associated with the former films being Ga-rich and thus facilitating incorporation of oxygen on As sites.

  1. 75 FR 51098 - Protection Island and San Juan Islands National Wildlife Refuges, Jefferson, Island, San Juan...

    Science.gov (United States)

    2010-08-18

    ... libraries in northwestern Washington: Anacortes Public Library, Bellingham Public Library, Clinton Public Library, Coupeville Public Library, Evergreen State College Library, Island Public Library, Jefferson County Central Library, Lopez Island Public Library, North Olympic Public Library, Oak Harbor Public...

  2. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

    Science.gov (United States)

    Jia, Chuanyu; Yu, Tongjun; Lu, Huimin; Zhong, Cantao; Sun, Yongjian; Tong, Yuzhen; Zhang, Guoyi

    2013-04-08

    The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage InGaN/GaN SRL on the structure, electrical and optical characteristics of GaN-based LEDs were investigated. The analysis of strain effect on recombination rate based k·p method indicated 12.5% reduction of strain in InGaN/GaN MQWs by inserting SRL with step stage InGaN/GaN structures. The surface morphology was improved and a smaller blue shift in the electroluminescence (EL) spectral with increasing injection current was observed for LEDs with step stage SRL compared with conventional LEDs. The output power of LEDs operating at 20 mA was about 15.3 mW, increased by more than 108% by using step stage InGaN/GaN SRL, which shows great potential of such InGaN/GaN SRL in modulating InGaN/GaN MQWs optical properties based on its strain relief function.

  3. Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser

    Institute of Scientific and Technical Information of China (English)

    CAO Yu-Lian; CHEN Liang-Hui; LIAN Peng; MA Wen-Quan; WANG Qing; WU Xu-Ming; HE Guo-Rong; LI Hui; WANG Xiao-Dong; SONG Guo-Feng

    2006-01-01

    @@ We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition.

  4. GaInNAs laser gain

    Energy Technology Data Exchange (ETDEWEB)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  5. Bone island and leprosy

    Energy Technology Data Exchange (ETDEWEB)

    Carpintero, P.; Garcia-Frasquet, A. [Department of Orthopaedic Surgery, Cordoba University, Medical School, Reina Sofia University Hospital, Cordoba (Spain); Tarradas, E. [Department of Imaging, Cordoba University, Medical School, Cordoba (Spain); Logrono, C. [Department of Dermatology, Reina Sofia University Hospital, Cordoba (Spain); Carrascal, A. [Department of Radiology, Infanta Elena Hospital, Huelva (Spain); Carreto, A. [Department of Radiology, Reina Sofia University Hospital, Cordoba (Spain)

    1998-06-01

    Objective. To determine the incidence of bone islands in leprosy patients. Design. X-rays of feet and hands of patients with Hansen`s disease (leprosy) were reviewed retrospectively. A second group of related age- and sex-matched patients who did not have Hansen`s disease was used for control purposes. Controls had undergone hand or foot X-rays during diagnosis of other pathologies. The patients with Hansen`s disease were compared with the control group, and were also analyzed as subgroups with different types of leprosy. The results were subjected to statistical analysis. Patients. Ninety patients with Hansen`s disease were randomly selected for this study. Patients who had had ulcers on hands or feet were excluded from the study. Results and conclusions. Bone islands were demonstrated in 20 patients with Hansen`s disease; no bone islands were observed in the controls. This was statistically significant (P<0.01). Bone islands were only seen in patients with lepromatous leprosy and borderline types but were not demonstrated in patients with tuberculoid leprosy. There was also a statistically significant relationship for a disease duration of 15 years or more. The cause of this raised incidence of enostosis in leprosy patients is not clear, but there may be a genetic predisposition in patients with leprosy, or it may be a side effect of leprosy, especially the lepromatous form. (orig.) With 4 figs., 2 tabs., 9 refs.

  6. Islands in the ice

    DEFF Research Database (Denmark)

    Jørgensen, Tina; Kjær, Kurt H.; Haile, James Seymour

    2012-01-01

    Nunataks are isolated bedrocks protruding through ice sheets. They vary in age, but represent island environments in 'oceans' of ice through which organism dispersals and replacements can be studied over time. The J.A.D. Jensen's Nunataks at the southern Greenland ice sheet are the most isolated ...

  7. Teachers' Potpourri: The Island

    Science.gov (United States)

    Levinson, Steven

    1971-01-01

    The author allows his students to create an imaginary society--the island. While developing the structure of their society, the students are actually practicing speech skills and activities such as problem solving through discussion, persuasive speaking and impromptu speaking. (Author/MS)

  8. The Flores Island tsunamis

    Science.gov (United States)

    Yeh, Harry; Imamura, Fumihiko; Synolakis, Costas; Tsuji, Yoshinobu; Liu, Philip; Shi, Shaozhong

    On December 12, 1992, at 5:30 A.M. GMT, an earthquake of magnitude Ms 7.5 struck the eastern region of Flores Island, Indonesia (Figure 1), a volcanic island located just at the transition between the Sunda and Banda Island arc systems. The local newspaper reported that 25-m high tsunamis struck the town of Maumere, causing substantial casualties and property damage. On December 16, television reports broadcast in Japan via satellite reported that 1000 people had been killed in Maumere and twothirds of the population of Babi Island had been swept away by the tsunamis.The current toll of the Flores earthquake is 2080 deaths and 2144 injuries, approximately 50% of which are attributed to the tsunamis. A tsunami survey plan was initiated within 3 days of the earthquake, and a cooperative international survey team was formed with four scientists from Indonesia, nine from Japan, three from the United States, one from the United Kingdom, and one from Korea.

  9. Molecular and morphological characterization of Xiphinema chambersi population from live oak in Jekyll Island, Georgia, with comments on morphometric variations

    Science.gov (United States)

    Zafar A. Handoo; Lynn K. Carta; Andrea M. Skantar; Sergei A. Subbotin; Stephen Fraedrich

    2016-01-01

    A population of Xiphinema chambersi from the root zone around live oak (Quercus virginiana Mill.) trees on Jekyll Island, GA, is described using both morphological and molecular tools and compared with descriptions of type specimens. Initially, because of a few morphological differences, this nematode was thought to represent an undescribed species. However, on further...

  10. Geochemistry and petrogenesis of Mesoproterozoic A-type granitoids from the Danish island of Bornholm, southern Fennoscandia

    DEFF Research Database (Denmark)

    Johansson, Åke; Waight, Tod Earle; Andersen, Tom

    2016-01-01

    Granitoids and gneisses from the Danish island of Bornholm have been investigated using whole rock geochemistry, Sr and Nd isotope geochemistry and Hf isotopes in zircon. Recent U–Pb dating shows that the rocks were formed during a short time interval at 1.45 to 1.46 Ga, penecontemporaneous...

  11. Hydrogenation of GaSb/GaAs quantum rings

    Energy Technology Data Exchange (ETDEWEB)

    Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Zhuang, Q. D. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Ahmad Kamarudin, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Department of Physics, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Darul Ehsan (Malaysia); Birindelli, S.; Capizzi, M. [Dipartimento di Fisica, Sapienza Universita di Roma, Piazzale A. Moro 2, 00185 Roma (Italy)

    2014-08-25

    We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2 K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\\QR emission energy of a few tens of meV is observed at temperatures ≥300 K, consistent with a reduction in average occupancy by ∼1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is very likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.

  12. The influence of In composition on properties of InxGa1-xAs/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance

    Science.gov (United States)

    Bedoui, M.; Habchi, M. M.; Moussa, I.; Rebey, A.

    2017-01-01

    Series of InxGa1-xAs/GaAs structures with indium vapor composition ranging from 13 to 100%, denoted samples A, B, C and D, were grown by metalorganic vapor phase epitaxy (MOVPE) at 450 °C and in situ monitored by spectral reflectance (SR). In order to contribute to the enhancement of crystal quality and to understand growth kinetic of InxGa1-xAs/GaAs structures, the dependence of structural and morphological properties on indium composition x was studied. Basing on high resolution x-ray diffraction (HRXRD) measurements, solid indium compositions x of samples A, B, C and D were determined. Also, the evolution of structural quality (dislocations density, grain size, etc.) as a function of indium composition x was quantified. Besides, morphological properties (hatching and islands formations, densities, sizes and uniformities, RMS surface roughness, etc.) and growth process (growth anisotropy, etc.) versus indium composition x were examined using atomic force microscopy (AFM) analysis. Also, reflectance three-dimensional plot as function of time and wavelength was recorded to quantify the evolution of reflectivity in the wavelength range from 400 to 1000 nm and to determine some growth parameters such as growth rates and thicknesses of InxGa1-xAs samples. A good correlation between experimental results issued from different characterizations tools was obtained.

  13. Landscapes of Santa Rosa Island, Channel Islands National Park, California

    Science.gov (United States)

    Schumann, R. Randall; Minor, Scott A.; Muhs, Daniel R.; Pigati, Jeffery S.

    2014-01-01

    Santa Rosa Island (SRI) is the second-largest of the California Channel Islands. It is one of 4 east–west aligned islands forming the northern Channel Islands chain, and one of the 5 islands in Channel Islands National Park. The landforms, and collections of landforms called landscapes, of Santa Rosa Island have been created by tectonic uplift and faulting, rising and falling sea level, landslides, erosion and deposition, floods, and droughts. Landscape features, and areas delineating groups of related features on Santa Rosa Island, are mapped, classified, and described in this paper. Notable landscapes on the island include beaches, coastal plains formed on marine terraces, sand dunes, and sand sheets. In this study, the inland physiography has been classified into 4 areas based on relief and degree of fluvial dissection. Most of the larger streams on the island occupy broad valleys that have been filled with alluvium and later incised to form steep- to vertical-walled arroyos, or barrancas, leaving a relict floodplain above the present channel. A better understanding of the processes and mechanisms that created these landscapes enhances visitors’ enjoyment of their surroundings and contributes to improving land and resource management strategies in order to optimize and balance the multiple goals of conservation, preservation, restoration, and visitor experience.

  14. Gibberellin biosynthesis in maize. Metabolic studies with GA{sub 15}, GA{sub 24}, GA{sub 25}, GA{sub 7}, and 2,3-dehydro-GA{sub 9}

    Energy Technology Data Exchange (ETDEWEB)

    Davis, G.; Kobayashi, Masatomo; Phinney, B.O.; Lange, T.; Croker, S.J.; Gaskin, P.; MacMillan, J.

    1999-11-01

    [17-{sup 14}C]-Labeled GA{sub 15}, GA{sub 24}, GA{sub 25}, GA{sub 7}, and 2,3-dehydro-GA{sub 9} were separately injected into normal, dwarf-1 (d1), and dwarf-5 (d5) seedlings of maize (Zea mays L.). Purified radioactive metabolites from the plant tissues were identified by sull-scan gas chromatography-mass spectrometry and Kovats retention index data. The metabolites from GA{sub 15} were GA{sub 44}, GA{sub 19}, GA{sub 20}, GA{sub 113}, and GA{sub 15}-15,16-ene (artifact?). GA{sub 24} was metabolized to GA{sub 19}, GA{sub 20}, and GA{sub 17}. The metabolites from GA{sub 25} were GA{sub 17}, GA{sub 25} 16{alpha},17-H{sub 2}-17-OH, and HO-GA{sub 25} (hydroxyl position not determined). GA{sub 7} was metabolized to GA{sub 30}, GA{sub 3}, isoGA{sub 3} (artifact?), and trace amounts of GA{sub 7}-diene-diacid (artifact?). 2,3-Dehydro-GA{sub 9} was metabolized to GA{sub 5}, GA{sub 7} (trace amounts), 2,3-dehydro-GA{sub 10} (artifact?), GA{sub 31}, and GA{sub 62}. Their results provide additional in vivo evidence of a metabolic grid in maize (i.e., pathway convergence). The grid connects members of a putative, non-early 3,130hydroxylation branch pathway to the corresponding members of the previously documented early 13-hydroxylation branch pathway. The inability to detect the sequence GA{sub 12}{r{underscore}arrow} GA{sub 15} {r{underscore}arrow} GA{sub 24} {r{underscore}arrow} GA{sub 9} indicates that the non-early 3,13-hydroxylation pathway probably plays a minor role in the origin of bioactive gibberellins in maize.

  15. Mauritius - a Sustainable Island

    DEFF Research Database (Denmark)

    Larsen, Anders

    2010-01-01

    The Government of Mauritius has a long-term vision of transforming Mauritius into a sustainable Island. One important element towards the achievement of this vision is to increase the country's renewable energy usage and thereby reducing dependence on fossil fuels. Democratisation of energy produ...... production via SSDG. Furthermore, the paper gives an update on the implementation in Mauritius of the proposed incentives.......The Government of Mauritius has a long-term vision of transforming Mauritius into a sustainable Island. One important element towards the achievement of this vision is to increase the country's renewable energy usage and thereby reducing dependence on fossil fuels. Democratisation of energy...... production is determined to be the way forward. A step in this direction is to devolve upon citizens the ability and motivation to produce electricity via small-scale distributed generation (SSDG), i.e. wind, photovoltaic and hydro installations below 50 kW. Given that SSDG is more expensive per installed...

  16. Island solution; Inselloesung

    Energy Technology Data Exchange (ETDEWEB)

    Bah, Isaac

    2013-06-15

    On the Azores island Graciosa the Berlin-based company Younicos has installed a new electricity system with advanced storage technology, which will make the islanders independent from fossil fuels. With an energy mix of wind power, photovoltaics and biomass the dependence on fossil fuels should be terminated. In the center of the flagship project specifically developed hybrid batteries are used (combination of sodium-sulfur- and lithium-ion batteries) with 2.7 MW of power and a storage capacity of ten megawatts hours. [German] Auf der Azoren-Insel Graciosa installiert das Berliner Unternehmen Younicos ein neues Stromsystem mit modernster Speichertechnologie, das die Bewohner unabhaengig von fossilen Energietraegern machen soll. Mit einem Energiemix aus Windkraft, Photovoltaik und Biomasse soll die Abhaengigkeit von fossilen Brennstoffen beendet werden. Im Zentrum des Vorzeigeprojekts stehen speziell fuer den Inseleinsatz entwickelte Hybridbatterien (Kombination aus Natrium-Schwefel- und Lithium-Ionen-Akkus) mit 2,7 Megawatt Leistung und eine Speicherkapazitaet von zehn Megawattestunden.

  17. Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.

    Science.gov (United States)

    Shi, Suixing; Zhang, Zhi; Lu, Zhenyu; Shu, Haibo; Chen, Pingping; Li, Ning; Zou, Jin; Lu, Wei

    2015-01-01

    In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

  18. Urban heat island 1

    DEFF Research Database (Denmark)

    Bühler, Oliver; Jensen, Marina Bergen; Petersen, Karen Sejr

    2010-01-01

    Urban Heat Island beskriver det forhold, at temperaturen i byområder er højere end temperaturen i tilgrænsede landområder. Årsagen hertil ligger i den urbane arealanvendelse, hvor en mindre andel af arealerne er dækket af vegetation, og en større andel består af forseglede arealer....

  19. From Cells to Islands: An unified Model of Cellular Parallel Genetic Algorithms

    CERN Document Server

    Simoncini, David; Verel, Sébastien; Clergue, Manuel

    2008-01-01

    This paper presents the Anisotropic selection scheme for cellular Genetic Algorithms (cGA). This new scheme allows to enhance diversity and to control the selective pressure which are two important issues in Genetic Algorithms, especially when trying to solve difficult optimization problems. Varying the anisotropic degree of selection allows swapping from a cellular to an island model of parallel genetic algorithm. Measures of performances and diversity have been performed on one well-known problem: the Quadratic Assignment Problem which is known to be difficult to optimize. Experiences show that, tuning the anisotropic degree, we can find the accurate trade-off between cGA and island models to optimize performances of parallel evolutionary algorithms. This trade-off can be interpreted as the suitable degree of migration among subpopulations in a parallel Genetic Algorithm.

  20. [Salmonella pathogenicity islands].

    Science.gov (United States)

    Sırıken, Belgin

    2013-01-01

    Salmonella species are facultative intracellular pathogenic bacteria. They can invade macrophages, dendritic and epithelial cells. The responsible virulence genes for invasion, survival, and extraintestinal spread are located in Salmonella pathogenicity islands (SPIs). SPIs are thought to be acquired by horizontal gene transfer. Some of the SPIs are conserved throughout the Salmonella genus, and some of them are specific for certain serovars. There are differences between Salmonella serotypes in terms of adaptation to host cell, virulence factors and the resulting infection according to SPA presence and characteristics. The most important Salmonella virulence gene clusters are located in 12 pathogenicity islands. Virulence genes that are involved in the intestinal phase of infection are located in SPI-1 and SPI-2 and the remaining SPIs are required for intracellular survival, fimbrial expression, magnesium and iron uptake, multiple antibiotic resistance and the development of systemic infections. In addition SPIs, Sigma ss (RpoS) factors and adaptive acid tolerance response (ATR) are the other two important virulence factors. RpoS and ATR found in virulent Salmonella strains help the bacteria to survive under inappropriate conditions such as gastric acidity, bile salts, inadequate oxygen concentration, lack of nutrients, antimicrobial peptides, mucus and natural microbiota and also to live in phagosomes or phagolysosomes. This review article summarizes the data related to pathogenicity islands in Salmonella serotypes and some factors which play role in the regulation of virulence genes.

  1. Cushion plants as islands.

    Science.gov (United States)

    Tepedino, V J; Stanton, N L

    1976-09-01

    The acarine fauna of two abundant species of cushion plant on the high, short-grass prairie of S.E. Wyoming were used to test The MacArthur-Wilson Theory of Island Biogeography. Multiple regression analysis using area, distance and percent moisture as independent variables and number of mite species and number of mite individuals were run for the two sampling dates. Results showed area alone to be consistently and highly correlated (r=0.84-0.94) with both species and individuals for one cushion species. The slopes of the species-area and individuals-area curves are among the highest recorded and were significantly higher on the second sampling date. Selective seasonal changes in the fauna were shown by increases both in numbers of species and individuals, mainly on larger cushions, for the later sampling period. It is hypothesized that seasonal changes are due to an increase in the number of predator species in response to an increase in the number of prey items. The slopes of the species-area curves are compared with those in the literature and it is argued that slope values are more dependent upon the taxonomic group being studied than on whether the island is insular or oceanic. Finally, we suggest that The MacArthur-Wilson Theory is not applicable to islands which 1) exhibit continuous growth, 2) lack a discrete species source, and 3) are relatively transitory.

  2. Islands of the Arctic

    Science.gov (United States)

    Overpeck, Jonathan

    2004-02-01

    Few environments on Earth are changing more dramatically than the Arctic. Sea ice retreat and thinning is unprecedented in the period of the satellite record. Surface air temperatures are the warmest in centuries. The biology of Arctic lakes is changing like never before in millennia. Everything is pointing to the meltdown predicted by climate model simulations for the next 100 years. At the same time, the Arctic remains one of the most pristine and beautiful places on Earth. For both those who know the Arctic and those who want to know it, this book is worth its modest price. There is much more to the Arctic than its islands, but there's little doubt that Greenland and the major northern archipelagos can serve as a great introduction to the environment and magnificence of the Arctic. The book uses the islands of the Arctic to give a good introduction to what the Arctic environment is all about. The first chapter sets the stage with an overview of the geography of the Arctic islands, and this is followed by chapters that cover many key aspects of the Arctic: the geology (origins), weather and climate, glaciers, ice sheets, sea ice, permafrost and other frozen ground issues, coasts, rivers, lakes, animals, people, and environmental impacts. The material is pitched at a level well suited for the interested layperson, but the book will also appeal to those who study the science of the Arctic.

  3. GaAs-MnAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Sadowski, Janusz [MAX-Lab, Lund University, P.O. Box 118, 221 00 Lund (Sweden); Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Siusys, Aloyzas; Wojciechowski, Tomasz; Reszka, Anna; Kowalski, Bogdan [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Kovacs, Andras; Kasama, Takeshi [Center for Electron Nanoscopy, Technical University of Denmark, Kgs. Lyngby 2800 (Denmark); Dunin-Borkowski, Rafal E. [Center for Electron Nanoscopy, Technical University of Denmark, Kgs. Lyngby 2800 (Denmark); Institute for Microstructure Research, Peter Gruenberg Institute, Forschungszentrum Juelich, 52425 Juelich (Germany)

    2011-07-15

    Different strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self-catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high temperatures on Si(100) substrates; (iii) GaAs-GaMnAs core-shell NW structures; (iv) GaAs-MnAs core-shell NW structures grown on Si(100). Structures of types (i), (iii), and (iv) exhibit ferromagnetic properties. Right: Scanning electron microscopy image of Mn doped GaAs NWs with Ga droplets at the tops, grown by MBE on oxidized Si(100) substrate in the autocatalytic growth mode. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. MARICULTURE ON CROATIAN ISLANDS

    Directory of Open Access Journals (Sweden)

    Gordana Šarušić

    2000-09-01

    Full Text Available The first attempts of intensive mariculture in Croatia commenced at the very beginning of 1980’s. The mid-eighties brought an expansion of mariculture production, which has been continuously increasing. A few different marine organisms are intensively cultured - both fish and shellfish. Among them commercially most important and highly valued species are sea bass Dicentrarchus labrax and sea bream Sparus aurata. Mussel Mytilus galloprovincialis and oyster Ostrea edulis are the most important shellfish. Fish species such as dentex Dentex dentex, red sea bream Pagrus major and sheepshead bream Puntazzo puntazzo are reared too, but in a rather small quantities. Only recently the rearing, on-growing- of bluefin tuna Thunnus thynnus started in Croatia. The juveniles (70% are reared in a Croatian hatcheries, and 30% has to be imported mainly from Italy and France, due to a higher demand for this kind of culture among the small growers. Croatian part of Adriatic sea possesses a number of geomorfologicaly suitable sites and meteorological conditions which determined the choice - type - of intensive culture. All fish species are reared in a floating cages. The choice of cages i. e. semi off-shore or floating frames, size, rearing volume and design depend on the investors personal preference. The annual turnouf of a market size bass was about 600t and 300t bream in 1996., by 10 island farms which is 70% of total production in Croatia. Including other cultured fish species last year production was up to 1000t, and it™s being estimated to be about 1300t in the following year. The shellfish production on the islands is usually individual attempt of farmers, producing minor quantities mostly in polyculture. This production has bigger potential but it’s limited owing to the EU quality control regulations which do not allow the export, and by domestic market which has drastically decreased due to the collapse of tourism during the recent war. Almost 80

  5. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    Energy Technology Data Exchange (ETDEWEB)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  6. Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Hsu, Hsiao-Chiu; Su, Yan-Kuin; Huang, Shyh-Jer; Wang, Yu-Jen; Wu, Chun-Ying; Chou, Ming-Chieh

    2010-04-01

    In this study, we had demonstrated the direct growth of nonpolar a-plane GaN on an r-plane sapphire by metal organic chemical vapor deposition (MOCVD) without any buffer layer. First, in this experiment, we had determined the optimum temperature for two-step growth, including obtaining three-dimensional (3D) GaN islands in the nucleation layer and coalescing with a further two-dimensional (2D) growth mode. The result shows that the nucleation layer grown under high temperature (1150 °C) leads to large islands with few grain boundaries. Under the same temperature, the effect of the V/III ratio on the growth of the overlaying GaN layer to obtain a flat and void free a-plane GaN layer is also studied. The result indicates one can directly grow a smooth epitaxial layer on an r-plane sapphire by changing the V/III ratio. The rms roughness decreases from 13.61 to 2.02 nm. The GaN crystal quality is verified using a mixed acid to etch the film surface. The etch pit density (EPD) is 3.16 ×107 cm-2.

  7. Demographic Ageing on Croatian Islands

    Directory of Open Access Journals (Sweden)

    Ivo Nejašmić

    2013-08-01

    Full Text Available This paper analyses the changes in the population structure of the Croatian islands by age, warns of the degree of ageing, provides spatial differentiation of this process and presents perspective of ageing at the level of settlement. Typing of population ageing is based on scores and has seven types. The total island population in 2011 belongs to the type 5 – very old population. Almost a half of the settlements (out of 303 have been affected by the highest levels of ageing (types 6 and 7. It was found that a quarter of island settlements will become “dead villages” in a foreseeable future; most of them are on small islands but also in the interior of larger islands. These are villages decaying in every respect, in which the way of life, as we know it, veins and goes out. The present ageing villagers are their last residents in most cases. Eve¬rything suggests that demographic recovery of the islands is not possible with the forces in situ. It is important to strike a balance between the needs and opportunities in order to successfully organize life on the islands, both small and large ones, and the fact is that there is a continuing disparity, which is especially profound in small islands. A sensitive and selective approach is needed to overcome the unfavourable demographic trends. Therefore it is necessary to respect the particularities of indi¬vidual islands and island groups in devising development strategy. Solutions to the problems must come of the local and wider community in synergy with relevant professional and scientific institutions. However, if the solutions are not found or measures do not give results, if the islands are left to desorganisation and senilisation, a part of the islands will become a wasteland. With regard to the value of this area whose wealth are people in the first place, this would be an intolerable civilization decline.

  8. Island biodiversity conservation needs palaeoecology

    DEFF Research Database (Denmark)

    Nogué, Sandra; de Nascimento, Lea; Froyd, Cynthia A.

    2017-01-01

    The discovery and colonization of islands by humans has invariably resulted in their widespread ecological transformation. The small and isolated populations of many island taxa, and their evolution in the absence of humans and their introduced taxa, mean that they are particularly vulnerable to ...... and the introduction of non-native species. We provide exemplification of how such approaches can provide valuable information for biodiversity conservation managers of island ecosystems....

  9. Late colonization of Easter Island.

    Science.gov (United States)

    Hunt, Terry L; Lipo, Carl P

    2006-03-17

    Easter Island (Rapa Nui) provides a model of human-induced environmental degradation. A reliable chronology is central to understanding the cultural, ecological, and demographic processes involved. Radiocarbon dates for the earliest stratigraphic layers at Anakena, Easter Island, and analysis of previous radiocarbon dates imply that the island was colonized late, about 1200 A.D. Substantial ecological impacts and major cultural investments in monumental architecture and statuary thus began soon after initial settlement.

  10. Lesch-Nyhan disease in two families from Chiloé Island with mutations in the HPRT1 gene.

    Science.gov (United States)

    Nguyen, Khue Vu; Silva, Sebastian; Troncoso, Monica; Naviaux, Robert K; Nyhan, William L

    2017-07-03

    Lesch-Nyhan disease (LND) is a rare X-linked inherited neurogenetic disorder of purine metabolism in which the enzyme, hypoxanthine-guanine phosphoribosyltransferase (HGprt) is defective. The authors report two independent point mutations leading to splicing errors: IVS 2 +1G>A, c.134 +1G>A, and IVS 3 +1G>A, c.318 +1G>A in the hypoxanthine-phosphoribosyltransferase1 (HPRT1) gene which result in exclusion of exon 2 and exon 3 respectively, in the HGprt enzyme protein from different members of two Chiloé Island families. Molecular analysis has revealed the heterogeneity of genetic mutation of the HPRT1 gene responsible for the HGprt deficiency. It allows fast, accurate carrier detection and genetic counseling.

  11. Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures

    Science.gov (United States)

    Gies, S.; Holz, B.; Fuchs, C.; Stolz, W.; Heimbrodt, W.

    2017-01-01

    (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures have been investigated using continuous wave and time-resolved photoluminescence spectroscopy at various temperatures. A complex interplay was observed between the excitonic type-II transitions with electrons in the (Ga,In)As well and holes in the Ga(As,Sb) well and the type-I excitons in the (Ga,In)As and Ga(As,Sb) wells. The type-II luminescence exhibits a strongly non-exponential temporal behavior below a critical temperature of T c = 70 K. The transients were analyzed in the framework of a rate-equation model. It was found that the exciton relaxation and hopping in the localized states of the disordered ternary Ga(As,Sb) are the decisive processes to describe the dynamics of the type-II excitons correctly.

  12. Renewable energy islands in Europe

    Energy Technology Data Exchange (ETDEWEB)

    Oestergaard, Iben [ed.

    1998-12-31

    This publication includes a compiled presentation of various aspects concerning the possible transformation of some European islands into renewable energy communities and these projects were presented by a selection of pioneer islands at the first European Seminar on Renewable Energy Islands, held on the Danish island of Samsoee, 29-30 June 1998. This issue has increased in importance with the presentation of the ambitious EU-White Paper: `Energy for the future: Renewable Sources of Energy` which was adopted in 1998. One of the key elements of the strategy for an accelerated implementation of renewable energy is to transform 100 localities within Europe into communities which are to be 100% self-sufficient with renewable energy before 2010. In line with this strategy, the Danish Government appointed the island of Samsoe towards the end of 1997 to be the first `official` Danish, renewable energy island. This is to serve as a demonstration project for other local communities, both in Denmark as well as in the rest Europe. Gothland, Madeira, Canary Islands, Cape Verde, Arki, Crete, Minorca and Orkney Islands were represented. Environmental advantages of wind, solar and wave power for distant island communities were indicated. Serious savings would be achieved by limitation of fossil fuel import and utilization of local resources. (EG)

  13. Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier

    Institute of Scientific and Technical Information of China (English)

    Ru-Dai Quan; Jin-Cheng Zhang; Jun-Shuai Xue; Yi Zhao; Jing Ning; Zhi-Yu Lin; Ya-Chao Zhang

    2016-01-01

    GaN-based heterostructures with an InAlGaN/AlGaN composite barrier on sapphire (0001) substrates are grown by a low-pressure metal organic chemical vapor deposition system.Compositions of the InAlGaN layer are determined by x-ray photoelectron spectroscopy,structure and crystal quality of the heterostructures are identified by high resolution x-ray diffraction,surface morphology of the samples are examined by an atomic force microscope,and Hall effect and capacitance-voltage measurements are performed at room temperature to evaluate the electrical properties of heterostructures.The Al/In ratio of the InAlGaN layer is 4.43,which indicates that the InAlGaN quaternary layer is nearly lattice-matched to the GaN channel.Capacitance-voltage results show that there is no parasitic channel formed between the InAlGaN layer and the AlGaN layer.Compared with the InAlGaN/GaN heterostructure,the electrical properties of the InAlGaN/AlGaN/GaN heterostructure are improved obviously.Influences of the thickness of the AlGaN layer on the electrical properties of the heterostructures are studied.With the optimal thickness of the AlGaN layer to be 5 nm,the 2DEG mobility,sheet density and the sheet resistance of the sample is 1889.61 cm2/V.s,1.44 × 1013 cm-2 and as low as 201.1 Ω/sq,respectively.

  14. Micromechanical sensors based on GaAs/AlGaAs

    OpenAIRE

    Fricke, K; Dehe, A.; SchuBler, M; Lee, W.Y.; Hartnagel, H.L.

    1994-01-01

    The combination of high temperature stable electro­nics with micromachining is a powerful means to de­velop a variety of intelligent sensors. Especially in the GaAs/AlGaAs material system all advantages fit to­gether to realize micromachined sensors with integrated high temperature electronics. The technology includes new ohmic and Schottky contacts with high stability at increased ambient temperature. A thermal sensor is pre­sented that can detect total pressure, gas type as well as gas velo...

  15. Islands of the Arctic

    Science.gov (United States)

    Dowdeswell, Julian; Hambrey, Michael

    2002-11-01

    The Arctic islands are characterized by beautiful mountains and glaciers, in which the wildlife lives in delicate balance with its environment. It is a fragile region with a long history of exploration and exploitation that is now experiencing rapid environmental change. All of these themes are explored in Islands of the Arctic, a richly illustrated volume with superb photographs from the Canadian Arctic archipelago, Greenland, Svalbard and the Russian Arctic. It begins with the various processes shaping the landscape: glaciers, rivers and coastal processes, the role of ice in the oceans and the weather and climate. Julian Dowdeswell and Michael Hambrey describe the flora and fauna in addition to the human influences on the environment, from the sustainable approach of the Inuit, to the devastating damage inflicted by hunters and issues arising from the presence of military security installations. Finally, they consider the future prospects of the Arctic islands Julian Dowdeswell is Director of the Scott Polar Research Institute and Professor of Physical Geography at 0he University of Cambridge. He received the Polar Medal from Queen Elizabeth for his contributions to the study of glacier geophysics and the Gill Memorial Award from the Royal Geographical Society. He is chair of the Publications Committee of the International Glaciological Society and head of the Glaciers and Ice Sheets Division of the International Commission for Snow and Ice. Michael Hambrey is Director of the Centre for Glaciology at the University of Wales, Aberystwyth. A past recipient of the Polar Medal, he was also given the Earth Science Editors' Outstanding Publication Award for Glaciers (Cambridge University Press). Hambrey is also the author of Glacial Environments (British Columbia, 1994).

  16. Islands and non-islands in native and heritage Korean

    Directory of Open Access Journals (Sweden)

    Boyoung eKim

    2016-02-01

    Full Text Available To a large extent, island phenomena are cross-linguistically invariable, but English and Korean present some striking differences in this domain. English has wh-movement and Korean does not, and while both languages show sensitivity to wh-islands, only English has island effects for adjunct clauses. Given this complex set of differences, one might expect Korean/English bilinguals, and especially heritage Korean speakers (i.e. early bilinguals whose L2 became their dominant language during childhood to be different from native speakers, since heritage speakers have had more limited exposure to Korean, may have had incomplete acquisition and/or attrition, and may show significant transfer effects from the L2. Here we examine islands in heritage speakers of Korean in the U.S. Through a series of four formal acceptability experiments comparing these heritage speakers with native speakers residing in Korea, we show that the two groups are remarkably similar. Both show clear evidence for wh-islands and an equally clear lack of adjunct island effects. Given the very different linguistic environment that the heritage speakers have had since early childhood, this result lends support to the idea that island phenomena are largely immune to environmental influences and stem from deeper properties of the processor and/or grammar. Similarly, it casts some doubt on recent proposals that islands are learned from the input.

  17. Seabirds of Easter Island, Salas y Gómez Island and Desventuradas Islands, southeastern Pacific Ocean

    OpenAIRE

    Flores,Marcelo A; Roberto P Schlatter; Rodrigo Hucke-Gaete

    2014-01-01

    We reviewed available information on seabirds inhabiting Easter Island, Salas y Gómez Island and Desventuradas Islands and their adjacent waters through an analysis of published and grey literature. Results obtained indicate that a total of 37 species are present in the study area and that, among the orders represented, the Procellariiformes and Charadriiformes are the dominant taxa (29 species). Moreover, the family Procellariidae is represented by 13 species and Laridae by 7 species. There ...

  18. The submental island flap.

    Science.gov (United States)

    Sterne, G D; Januszkiewicz, J S; Hall, P N; Bardsley, A F

    1996-03-01

    The submental island flap is a reliable source of skin of excellent colour, contour and texture match for facial resurfacing and leaves a well hidden donor site. The flap is safe, rapid and simple to raise. We report on its use in 12 cases of facial or intraoral reconstruction. Complications were few. However, there was one case of complete flap loss following its use in a reverse flow manner, due to the presence of an unreported, but constant, valve in the venous system of the face. We believe this flap to be a worthwhile addition to the existing surgical armamentarium.

  19. Organizations as Designed Islands

    Directory of Open Access Journals (Sweden)

    Pasquale Gagliardi

    2009-05-01

    Full Text Available The literature and practice of organizational design are mostly based on simplistic conceptions which ignore recent theoretical developments in organizational studies. Conceiving of organizations as ‘designed islands’, it is argued, can contribute to a more solid theoretical foundation to organization theory, viewed as normative science. Relying on the work of Peter Sloterdijk, who describes the forms of life in space in terms of spheres, the heuristic power of the island metaphor is explored. What can be learnt from the art of isolating in order to construct lived organizational environments is then discussed, and the paradoxical relationship between connection and isolation is highlighted.

  20. Pine Island Glacier, Antarctica

    Science.gov (United States)

    2001-01-01

    This pair of MISR images of the Pine Island Glacier in western Antarctica was acquired on December 12, 2000 during Terra orbit 5246. At left is a conventional, true-color image from the downward-looking (nadir) camera. The false-color image at right is a composite of red band data taken by the MISR forward 60-degree, nadir, and aftward 60-degree cameras, displayed in red, green, and blue colors, respectively. Color variations in the left (true-color) image highlight spectral differences. In the multi-angle composite, on the other hand, color variations act as a proxy for differences in the angular reflectance properties of the scene. In this representation, clouds show up as light purple. Blue to orange gradations on the surface indicate a transition in ice texture from smooth to rough. For example, the bright orange 'carrot-like' features are rough crevasses on the glacier's tongue. In the conventional nadir view, the blue ice labeled 'rough crevasses' and 'smooth blue ice' exhibit similar coloration, but the multi-angle composite reveals their different textures, with the smoother ice appearing dark purple instead of orange. This could be an indicator of different mechanisms by which this ice is exposed. The multi-angle view also reveals subtle roughness variations on the frozen sea ice between the glacier and the open water in Pine Island Bay.To the left of the 'icebergs' label are chunks of floating ice. Additionally, smaller icebergs embedded in the frozen sea ice are visible below and to the right of the label. These small icebergs are associated with dark streaks. Analysis of the illumination geometry suggests that these streaks are surface features, not shadows. Wind-driven motion and thinning of the sea ice in the vicinity of the icebergs is one possible explanation.Recently, Robert Bindschadler, a glaciologist at the NASA Goddard Space Flight Center discovered in Landsat 7 imagery a newly-formed crack traversing the Pine Island Glacier. This crack is

  1. Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

    Institute of Scientific and Technical Information of China (English)

    MU Sen; YU Tong-Jun; HUANG Liu-Bing; JIA Chuan-Yu; PAN Yao-Bo; YANG Zhi-Jian; CHEN Zhi-Zhong; QIN Zhi-Xin; ZHANG Guo-Yi

    2007-01-01

    Electrical characteristics of Ino.05Gao.95N/AJo.07Gao.93N and Ino.05Gao.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength are measured. It is found that for In-GaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the AJ0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic ofp-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.

  2. Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

    Science.gov (United States)

    Xu, Dongwei; Zapol, Peter; Stephenson, G. Brian; Thompson, Carol

    2017-04-01

    The surface orientation can have profound effects on the atomic-scale processes of crystal growth and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane (0001) and m-plane (01 1 ¯ 0 ) surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation, we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for the m- and c-plane, respectively.

  3. Asthma and Native Hawaiians/Pacific Islanders

    Science.gov (United States)

    ... Population Profiles > Native Hawaiian/Other Pacific Islander > Asthma Asthma and Native Hawaiians/Pacific Islanders Native Hawaiians/Pacific Islanders are 70 percent more likely to have asthma as non-Hispanic whites. National data for this ...

  4. Stroke and Native Hawaiians/Pacific Islanders

    Science.gov (United States)

    ... Population Profiles > Native Hawaiian/Other Pacific Islander > Stroke Stroke and Native Hawaiians/Pacific Islanders Native Hawaiians/Pacific ... non-Hispanic white adults to die from a stroke in 2010. In general, Native Hawaiian/Pacific Islander ...

  5. Investigation and comparison of GaN nanowire nucleation and growth by the catalyst-assisted and self-induced approaches

    Energy Technology Data Exchange (ETDEWEB)

    Cheze, Caroline

    2010-03-04

    This work focuses on the nucleation and growth mechanisms of GaN nanowires (NWs) by molecular beam epitaxy (MBE). The two main novelties of this study are the intensive employment of in-situ techniques and the direct comparison of selfinduced and catalyst-induced NWs. On silicon substrates, GaN NWs form in MBE without the use of any external catalyst seed. On sapphire, in contrast, NWs grow under identical conditions only in the presence of Ni seeds. NW nucleation was studied in situ by reflection high-energy electron diffraction (RHEED) in correlation with line-of-sight quadrupole mass spectrometry (QMS). The latter technique allows to monitor the incorporated amount of Ga. For the catalyst-assisted approach, three nucleation stages were identified: first incorporation of Ga into the Ni seeds, second transformation of the seed crystal structure due to Ga accumulation, and last GaN growth under the seeds. The crystalline structure of the seeds during the first two stages is in accord with the Ni-Ga binary phase diagram and evidenced that only Ga incorporates into the Ni particles. GaN forms only after the Ga concentration is larger than the one of Ni. The observation of diffraction patterns generated by the Ni-Ga seed particles during the whole nucleation evidences the solid state of the seeds. Moreover, the QMS study showed that it is not Ga incorporation into Ni but GaN nucleation itself that limits the growth processes. For the self-induced NWs, QMS and RHEED investigations indicate very similar nucleation processes on Si(001) and Si(111) and two nucleation stages were identified. Transmission electron microscopy on samples grown on Si(001) revealed that the first stage is characterized by the competition between the nucleation of crystalline Si{sub x}N{sub y} and GaN. During this stage, the Si surface strongly roughens by the formation of pits and Si mounds. At the same time, very few GaN islands nucleate. During the second stage, the amorphization of the Si

  6. Rain on small tropical islands

    Science.gov (United States)

    Sobel, A. H.; Burleyson, C. D.; Yuter, S. E.

    2011-04-01

    A high-resolution rainfall climatology based on observations from the Tropical Rainfall Measuring Mission's Precipitation Radar (PR) instrument is used to evaluate the influence of small tropical islands on climatological rainfall. Islands with areas between one hundred and several thousand km2 are considered in both the Indo-Pacific Maritime Continent and Caribbean regions. Annual mean climatological (1997-2007) rainfall over each island is compared with that over the surrounding ocean region, and the difference is expressed as a percentage. In addition to total rainfall, rain frequency and intensity are also analyzed. Results are stratified into two 12 h halves of the diurnal cycle as well as eight 3 h periods, and also by a measure of each island's topographic relief. In both regions, there is a clear difference between larger islands (areas of a few hundred km2 or greater) and smaller ones. Both rain frequency and total rainfall are significantly enhanced over larger islands compared to the surrounding ocean. For smaller islands the enhancement is either negligibly small, statistically insignificant, or, in the case of Caribbean rain frequency, negative. The enhancement in total rainfall over larger islands is partly attributable to greater frequency and partly to greater intensity. A diurnal cycle in island enhancement is evident in frequency but not intensity, except over small Caribbean islands where the converse is true. For the larger islands, higher orography is associated with greater rainfall enhancements. The orographic effect is larger (percentagewise) in the Caribbean than in the Maritime Continent. Orographic precipitation enhancement manifests more strongly as increased frequency of precipitation rather than increased intensity and is present at night as well as during the day. The lack of a clear diurnal cycle in orographic enhancement suggests that much of the orographic rainfall enhancement is attributable to mechanically forced upslope flow

  7. Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As

    Energy Technology Data Exchange (ETDEWEB)

    Adell, J; Ulfat, I; Ilver, L; Kanski, J [Department of Applied Physics, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sadowski, J [Institute of Physics, Polish Academy of Sciences, PL-02-668 Warsaw (Poland); Karlsson, K [Department of Life Sciences, University of Skoevde, SE-541 28 Skoevde (Sweden)

    2011-03-02

    Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.

  8. Multilayers of InGaAs Nanostructures Grown on GaAs(210 Substrates

    Directory of Open Access Journals (Sweden)

    Wang Zhiming

    2010-01-01

    Full Text Available Abstract Multilayers of InGaAs nanostructures are grown on GaAs(210 by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210 nanostructures are achieved.

  9. Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As.

    Science.gov (United States)

    Adell, J; Ulfat, I; Ilver, L; Sadowski, J; Karlsson, K; Kanski, J

    2011-03-02

    Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.

  10. InGaAs/GaAs异质薄膜的MBE生长研究%The MBE growth research on InGaAs/GaAs heterofilms

    Institute of Scientific and Technical Information of China (English)

    罗子江; 周勋; 杨再荣; 贺业全; 何浩; 邓朝勇; 丁召

    2011-01-01

    This paper reports an experiment research which utilized of the molecular beam epitaxy technology to grow the InGaAs/GaAs film. The growth conditions was monitored through the RHEED patterns in real-time,the growth rate was measured and the composition of InGaAs film was determined by RHEED intensity oscillations,and a method was put forward to control the composition of In/Ga in InGaAs/GaAs film. According to the R HEED patterns, the surface of InGaAs film was (2 × 3) reconstructed. After growth, the sample was quenched down to room temperature then transferred into STM for scanning. A smooth,atomically flat surface of InGaAs/GaAs film was confirmed by the STM images.%利用分子束外延技术,在GaAs(001)基片上外延InGaAs/GaAs异质薄膜,通过RHEED图像演变实时监控薄膜生长状况,采用RHEED强度振荡测量薄膜生长速率,确定薄膜中In/Ga的组分比,并提出控制InGaAs薄膜中In/Ga组分比的生长方法.根据RHEED图像,指出获得的InGaAs薄膜处于(2×3)表面重构相.样品经过淬火至室温后对样品做STM扫描分析,证实样品为表面原子级平整的InGaAs/GaAs异质薄膜.

  11. Thermal Stability of Strained AlGaN/GaN Heterostructures

    Institute of Scientific and Technical Information of China (English)

    ZHANG Min; XIAO Hong-Di; LIN Zhao-Jun

    2006-01-01

    @@ The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700℃ 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance-voltage measurements, and the self-consistent solution of Schrodinger's and Poisson's equations, it is found that after 700℃ 30-min thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas (2DEG) electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.

  12. An Island Called Cuba

    Directory of Open Access Journals (Sweden)

    Jean Stubbs

    2011-06-01

    Full Text Available Review of: An Island Called Home: Returning to Jewish Cuba. Ruth Behar, photographs by Humberto Mayol. New Brunswick NJ: Rutgers University Press, 2007. xiii + 297 pp. (Cloth US$ 29.95 Fidel Castro: My Life: A Spoken Autobiography. Fidel Castro & Ignacio Ramonet. New York: Scribner/Simon & Schuster, 2008. vii + 724 pp. (Paper US$ 22.00, e-book US$ 14.99 Cuba: What Everyone Needs to Know. Julia E. Sweig. New York: Oxford University Press, 2009. xiv + 279 pp. (Paper US$ 16.95 [First paragraph] These three ostensibly very different books tell a compelling story of each author’s approach, as much as the subject matter itself. Fidel Castro: My Life: A Spoken Autobiography is based on a series of long interviews granted by the then-president of Cuba, Fidel Castro, to Spanish-Franco journalist Ignacio Ramonet. Cuba: What Everyone Needs to Know, by U.S. political analyst Julia Sweig, is one of a set country series, and, like Ramonet’s, presented in question/answer format. An Island Called Home: Returning to Jewish Cuba, with a narrative by Cuban-American anthropologist Ruth Behar and photographs by Cuban photographer Humberto Mayol, is a retrospective/introspective account of the Jewish presence in Cuba. While from Ramonet and Sweig we learn much about the revolutionary project, Behar and Mayol convey the lived experience of the small Jewish community against that backdrop.

  13. The Museum of Piano Island

    Institute of Scientific and Technical Information of China (English)

    LURUCAI

    2004-01-01

    GULANGYU, the island of pianos in southeast Xiamen, has more than 500 pianos. In the island's Shuzhuang Garden is the Gulangyu Piano Museum.Spread out over 2,000 square meters of land, the museum has on exhibit more than 70 pianos from the UK, France, Germany and Austria.

  14. Neoproterozoic granitoids on Wrangel Island

    Science.gov (United States)

    Luchitskaya, M. V.; Sergeev, S. A.; Sokolov, S. D.; Tuchkova, M. I.

    2016-07-01

    Based on geochronological U-Pb studies, the age of Wrangel Island granitoids was estimated as Neoproterozoic (Cryogenian). Some granitoids contain zircons with inherited cores with an estimated age of 1010, 1170, 1200, and >2600 Ma, assuming the presence of ancient (Neoarchean-Mesoproterozoic) rocks in the Wrangel Island foundation and their involvement in partial melting under granitoid magma formation.

  15. A 3000 yr paleostorm record from St. Catherines Island, Georgia

    Science.gov (United States)

    Braun, Erick; Meyer, Brian; Deocampo, Daniel; Kiage, Lawrence M.

    2017-09-01

    Tropical cyclones (hurricanes in the northern hemisphere) are amongst the most devastating of the world's natural disasters and cause billions of dollars in damage every year. Data on the likelihood of a coastal site being struck by a major hurricane strike can potentially aid in planning and mitigation efforts that could save money and lives. However, forecasting requires data that are currently insufficient for the Georgia Bight. This study provides information to enhance the paleohurricane record by analysis of a 467 cm thick vibracore raised from St. Catherines Island, GA. Sediment geochemistry and foraminiferal assemblages indicate deposits attributable to seven paleohurricane events, five of which were likely major hurricanes when they made landfall on St. Catherines. Magnitudes were estimated by comparison to the overwash deposit left by ;The Sea Islands hurricane of 1893;, a major hurricane recorded by the recent sediment of St. Catherines Island. The St. Catherines record also shows a change in the activity levels on the Georgia coast with two distinct activity regimes over the past 3000 years.

  16. Development of GaN/AlGaN Terahertz Quantum Cascade Laser

    Science.gov (United States)

    2008-11-19

    AFOSR-Taiwan Nanoscience Initiative Project Final Report Project Title Development of GaN /AlGaN Terahertz Quantum Cascade Laser...DATES COVERED 14-06-2007 to 13-06-2008 4. TITLE AND SUBTITLE Development of GaN -Based Terahertz Quantum Cascade Laser 5a. CONTRACT NUMBER...the GaN /AlGaN active region for terahertz quantum cascade lasers using MOCVD system based on the quantum cascade structure proposed by Prof. Greg Sun

  17. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

    OpenAIRE

    Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki

    2001-01-01

    Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance–voltage, and current–voltage measurements. From in situ XPS study, relatively smaller band bending of 0.6 eV was seen at the GaN (2×2) surface grown by radio frequency-assisted molecular beam epitaxy on the metalorganic vapor phase epitaxy GaN template. After exposing the sample surface to air, strong band bending took...

  18. InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

    OpenAIRE

    Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth

    2014-01-01

    InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measur...

  19. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Directory of Open Access Journals (Sweden)

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  20. Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Benton, J.; Bai, J.; Wang, T., E-mail: t.wang@sheffield.ac.uk [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2014-12-01

    We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved.

  1. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  2. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Xing, Huili; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-10-19

    By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

  3. Islanded operation of distributed networks

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report summarises the findings of a study to investigate the regulatory, commercial and technical risks and benefits associated with the operation of distributed generation to power an islanded section of distributed network. A review of published literature was carried out, and UK generators were identified who could operate as part of an island network under the existing technical, regulatory, and safety framework. Agreement on case studies for consideration with distributed network operators (DNOs) is discussed as well as the quantification of the risks, benefits and costs of islanding, and the production of a case implementation plan for each case study. Technical issues associated with operating sections of network in islanded mode are described, and impacts of islanding on trading and settlement, and technical and commercial modelling are explored.

  4. GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

    Science.gov (United States)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2017-01-01

    Heterojunction bipolar transistors with GaAsxP1-x bases and collectors and InyGa1-yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different GaAsxP1-x compositions were used, ranging from x = 0.825 to x = 1 (GaAs), while the InyGa1-yP composition was adjusted to remain lattice-matched to the GaAsP. DC gain close to or exceeding 100 is measured for 60 μm diameter devices of all compositions. Physical mechanisms governing base current and therefore current gain are investigated. The collector current is determined not to be affected by the barrier caused by the conduction band offset between the InGaP emitter and GaAsP base. While the collector current for the GaAs/InGaP devices is well-predicted by diffusion of electrons across the quasi-neutral base, the collector current of the GaAsP/InGaP devices exceeds this estimate by an order of magnitude. This results in higher transconductance for GaAsP/InGaP than would be estimated from known material properties.

  5. Offshore wind farm siting procedures applied offshore of Block Island, Rhode Island

    Science.gov (United States)

    O'Reilly, Christopher M.

    land. The REZ area is chosen as test site for the algorithm, and an optimal layout for the 5 turbines is found and discussed. Similarly the FAA tool is applied to the Block Island airport demonstrating the complexity of the FAA exclusionary area, and defining the limits of the exclusionary areas. The FAA regulation model is a geometric model in which all major (FAA) regulations within RI and the RI topography are embedded. The user specifies the dimension of the proposed turbines and an airport of interest, and a map of exclusionary zones specific to the turbine height and rules applying to the airport is generated. The model is validated for the entire state of Rhode Island. The micro-siting model finds the optimum placement of each turbine for a given number of turbines within an area. It includes the aerodynamic constraints (loss in wind speed within the wake of a turbine) associated to the deployment of arrays of turbines and the cable interconnection cost. It is combined with the technical, ecological, and social constraints used in the RIOSAMP macro-siting tool to provide a comprehensive micro-siting tool. In the optimization algorithm, a simple wake model and turbine-clustering algorithm are combined with the WIFSI in an objective function; the objective function is optimized with a genetic algorithm (GA).

  6. MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

    Science.gov (United States)

    Sladek, K.; Klinger, V.; Wensorra, J.; Akabori, M.; Hardtdegen, H.; Grützmacher, D.

    2010-02-01

    Two different fabrication approaches were compared to obtain conductive GaAs nanowires: on one hand by modulation doping of GaAs/AlGaAs core/shell nanowires, on the other hand by Si-doping of GaAs nanowires. Modulation doped GaAs/AlGaAs core-shell nanowires were grown by selective area metal organic vapor phase epitaxy (MOVPE) on GaAs (1 1 1) substrates. The influences of growth parameters and mask design on aspect ratio of the core structures were investigated. The specialty of this study was that the growth mode was switched from vertical GaAs wire growth to the AlGaAs conformal shell overgrowth by intentionally changing the growth chemistry from the use of a more stable group III source - trimethylgallium (TMGa) to more easily decomposed sources - the alternative sources triethylgallium (TEGa) and dimethylethylaminealane (DMEAAl). It was found that the diameter and length of the core structures strongly depend on the arsenic partial pressure and growth temperature as well as mask design. The uniformity of shell growth is also influenced by the mask design. Additionally an alternative approach for the production of conductive GaAs nanowires was under study. To this end, the influence of Si-doping on GaAs core growth was investigated. It was found that doping has a detrimental impact on growth morphology leading to an undesirable enhanced growth rate on the nanowire side facets.

  7. Status and Advances of Researches on GA 20-oxidases

    Institute of Scientific and Technical Information of China (English)

    Li Wei; Chen Xiaoyang; Li Hui; Guo Hai

    2003-01-01

    GA 20-oxidase, the most important limiting enzyme, can catalyze a series of oxidization of GA biosynthesis pathwayfrom GA12 to GA9 and from GA53 to GA20 in the higher plants. This paper reviews the studies on the characters of GA 20-oxidase,the gene and the protein of GA 20-oxidase and the regulation of GA 20-oxidase gene expression in recent years. At the same time,the prospects for the gene transformation of GA 20-oxidase in agriculture, forestry and horticulture are also discussed.

  8. Island in an island – The suggestions for transportation improvement plan for Haidian Island, Haikou, Hainan

    Directory of Open Access Journals (Sweden)

    Sia Rosalind Juo Ling

    2017-01-01

    Full Text Available Haidian Island, which situated at the Northern part of Haikou City of Hainan Province, is an island within a city. Haidian Island is unique in term of it's development which centered around an university, the Hainan University, besides some others important landmarks, such as Haikou city hospital, Baishamen municipal park, Golf Driving Range etc. All commercials, residential, recreational activities etc are planned to serve Hainan University in particular. The study, taking ‘Haidian Island Area Development Control Plan’ as case study, would like to look into the importance of transportation and traffic planning. The study used observation, site investigation and traffic study methods to gather data needed. Firstly the study analyzed the current state of transportation system for Haidian Island in accordance to the Island Development Control plan and Haikou master plan and identified the problems. Then, the study made some recommendations for these problems. The study highlighted the important of non-motorized, cycling and walking as the main transportation system for an education-based island and as supportive to domestic tourism activities found. The transportation planning suggested by the study took ‘green and low-carbon’ approaches considered the role of University as the core activity in the island.

  9. Molecular and morphological characterization of Xiphinema chambersi population from live oak in Jekyll Island, Georgia, with comments on morphometric variations

    Science.gov (United States)

    Zafar A Handoo; Lynn K. Carta; Andrea M. Skantar; Sergei A. Subbotin; Stephen W. Fraedrich

    2016-01-01

    A population of Xiphinema chambersi from the root zone around live oak (Quercus virginiana Mill.) trees on Jekyll Island, GA, is described using both morphological and molecular tools and compared with descriptions of type specimens. Initially, because of a few morphological differences, this nematode was thought to represent...

  10. Mauritius - a Sustainable Island

    DEFF Research Database (Denmark)

    Larsen, Anders

    2010-01-01

    The Government of Mauritius has a long-term vision of transforming Mauritius into a sustainable Island. One important element towards the achievement of this vision is to increase the country's renewable energy usage and thereby reducing dependence on fossil fuels. Democratisation of energy...... production is determined to be the way forward. A step in this direction is to devolve upon citizens the ability and motivation to produce electricity via small-scale distributed generation (SSDG), i.e. wind, photovoltaic and hydro installations below 50 kW. Given that SSDG is more expensive per installed...... capacity than the existing much larger power plants, subsidies are needed so as to provide incentives to small independent power producers (SIPP), households and firms to invest in SSDG.The paper presents the context, the theoretical considerations and the proposed incentive schemes to enable electricity...

  11. Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

    Science.gov (United States)

    Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

    2017-06-01

    The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

  12. Lattice-engineered Si{sub 1-x}Ge{sub x}-buffer on Si(001) for GaP integration

    Energy Technology Data Exchange (ETDEWEB)

    Skibitzki, Oliver, E-mail: skibitzki@ihp-microelectronics.com; Zaumseil, Peter; Yamamoto, Yuji; Andreas Schubert, Markus [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Paszuk, Agnieszka; Hannappel, Thomas [Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Hatami, Fariba; Ted Masselink, W. [Institut für Physik, Humboldt Universität zu Berlin, Newtonstrasse 15, 12489 Berlin (Germany); Trampert, Achim [Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-03-14

    We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400 nm thickness whose in-plane lattice constant is matched to GaP—not at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270 nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400 nm Si{sub 0.85}Ge{sub 0.15}/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the SiGe buffer. TEM-energy-dispersive x-ray spectroscopy studies reveal that these defects are often correlated with stoichiometric inhomogeneities in the GaP film. Time-of-flight Secondary ion mass spectrometry detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer.

  13. Simulation of polarization effects in AlGaN/GaN heterojunction

    Institute of Scientific and Technical Information of China (English)

    LI; Na; ZHAO; Degang; YANG; Hui

    2004-01-01

    A method for introducing polarization effects in the simulation of GaN-based heterojunction devices is proposed. A δ doping layer is inserted at the interface of heterojunction and the ionized donors or acceptors act as polarization induced fixed charges. Thus polarization effects can be taken into account in a traditional device simulator. Ga-face and N-face single AlGaN/GaN heterostructures are simulated, and the simulation results show that carrier confinement takes place only in the former structure while not in the latter one. The sheet density of free electrons at the interface of Ga-face AlGaN/GaN increases with the Al composition and the thickness of AlGaN. The consistence of simulation results with the experiments and calculations reported elsewhere shows that this method can effectively introduce polarization effects in the simulation of GaN-based heterojunction devices.

  14. Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT

    Directory of Open Access Journals (Sweden)

    Palash Das

    2011-01-01

    Full Text Available The gate leakage current reduction solution of AlGaN/GaN HEMT device issue has been addressed in this paper with compositional grading of AlGaN barrier layer. This work is also conjugated with the critical thickness limitation of heterostructure material growth. Hence, critical thickness calculation of AlGaN over GaN has been kept in special view. 1D Schrodinger and Poisson solver was used to calculate the 2DEG concentration and effective location to use it in the ATLAS device simulator for the predictions. The proposed Al0.50Ga0.50N/Al0.35Ga0.65N/Al0.20Ga0.80N/GaN HEMT structure exhibits the leakage current of the order of around 15 nA/mm at gate voltage of 1 V.

  15. Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns

    Science.gov (United States)

    Kong, X.; Li, H.; Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E.; Draxl, C.; Trampert, A.

    2016-02-01

    We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.

  16. GIPSy: Genomic island prediction software.

    Science.gov (United States)

    Soares, Siomar C; Geyik, Hakan; Ramos, Rommel T J; de Sá, Pablo H C G; Barbosa, Eudes G V; Baumbach, Jan; Figueiredo, Henrique C P; Miyoshi, Anderson; Tauch, Andreas; Silva, Artur; Azevedo, Vasco

    2016-08-20

    Bacteria are highly diverse organisms that are able to adapt to a broad range of environments and hosts due to their high genomic plasticity. Horizontal gene transfer plays a pivotal role in this genome plasticity and in evolution by leaps through the incorporation of large blocks of genome sequences, ordinarily known as genomic islands (GEIs). GEIs may harbor genes encoding virulence, metabolism, antibiotic resistance and symbiosis-related functions, namely pathogenicity islands (PAIs), metabolic islands (MIs), resistance islands (RIs) and symbiotic islands (SIs). Although many software for the prediction of GEIs exist, they only focus on PAI prediction and present other limitations, such as complicated installation and inconvenient user interfaces. Here, we present GIPSy, the genomic island prediction software, a standalone and user-friendly software for the prediction of GEIs, built on our previously developed pathogenicity island prediction software (PIPS). We also present four application cases in which we crosslink data from literature to PAIs, MIs, RIs and SIs predicted by GIPSy. Briefly, GIPSy correctly predicted the following previously described GEIs: 13 PAIs larger than 30kb in Escherichia coli CFT073; 1 MI for Burkholderia pseudomallei K96243, which seems to be a miscellaneous island; 1 RI of Acinetobacter baumannii AYE, named AbaR1; and, 1 SI of Mesorhizobium loti MAFF303099 presenting a mosaic structure. GIPSy is the first life-style-specific genomic island prediction software to perform analyses of PAIs, MIs, RIs and SIs, opening a door for a better understanding of bacterial genome plasticity and the adaptation to new traits.

  17. Bamboo Diversity in Sumba Island

    Directory of Open Access Journals (Sweden)

    KARSONO

    2005-04-01

    Full Text Available Bamboo is one of the economic plant which grow widely in the villages and have been used by the local people in the villages. Indonesia has about 10% of the world bamboo, 50% among them was endemic to Indonesia. According Widjaja (2001 Lesser Sunda Island which consists of Lombok, Sumbawa, Flores, Timor, Sumba and other small island eastern of Flores has 14 bamboo species, however, the information from the Sumba Island was lacking because of lacking data from this area except one species which was proposed by S. Soenarko in 1977 where the type specimens was collected by Iboet 443 in 1925. To fullfill data from the Sumba Island, an exploration to this area has been conducted on July 2003. The observation was done in West Sumba and East Sumba District, especially in two natioal parks at both districts. According to this inventory study in the Sumba Island, there were 10 bamboo species in Sumba Island, 1 species among them (Dinochloa sp. was a new species which has not been collected before, whereas the other species (Dinochloa kostermansiana has a new addition record from this area. The bamboo species in Sumba Island were Bambusa blumeana, Bambusa vulgaris, Dendocalamus asper, Dinochloa kostermansiana, Dinochloa sp., Gigantochloa atter, Nastus reholtumianus, Phyllostachys aurea, Schisotachyum brachycladum and Schizostachyum lima. From 10 recorded species, the genera Dinochloa and Nastus grow wild in the forest, whereas another species grow widly or cultivated in the garden. Furthermore, the genus Dinochloa was the only genus grow climbing. The endemic species found in Sumba Island was Nastus reholttumianus, whereas Dinochloa kostermansiana was also found in Flores Island.

  18. Island Bay Wilderness study area : Island Bay National Wildlife Refuge

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This document is a brief report on a wilderness study area located in the Island Bay National Wildlife Refuge. It discusses the history of the study area, its...

  19. Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

    Science.gov (United States)

    Leach, J. H.; Biswas, N.; Paskova, T.; Preble, E. A.; Evans, K. R.; Wu, M.; Ni, X.; Li, X.; Özgür, Ü.; Morkoç, H.

    2011-02-01

    Bulk GaN substrates promise to bring the full potential of nitride-based devices to bear since they offer a low thermal and lattice mismatched alternative to foreign substrates for epitaxial growth. However, due to the high cost and low availability of bulk GaN substrates, effects such as surface misorientation (offcut), surface polishing, and preparation of such substrates on subsequent epitaxy are still not well understood. As such, AlGaN/GaN heterostructures with nominal Al compositions of 25% were grown by MOCVD on semi-insulating bulk GaN substrates with offcuts ranging from 0.05 to 1.95° in the m-direction (10 10) to attempt to determine the optimal offcut for bulk GaN substrates for AlGaN-based HFET devices. X-ray diffraction (XRD) studies indicate that the Al composition does not vary with offcut, however reciprocal space mapping shows evidence of strain relaxation of the AlGaN in samples grown on substrates with offcut >1.1°. Additionally, we observed a minimum in sheet resistance of the 2DEGs for substrates with offcuts near 0.5°, arising from higher mobilities in these samples. Evidence of an optimal substrate misorientation is important for AlGaN-based devices grown on bulk GaN substrates.

  20. AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

    Science.gov (United States)

    Yuliang, Huang; Lian, Zhang; Zhe, Cheng; Yun, Zhang; Yujie, Ai; Yongbing, Zhao; Hongxi, Lu; Junxi, Wang; Jinmin, Li

    2016-11-01

    We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V th) and better gate control ability. The influence of Cp2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied. With the increasing Cp2Mg from 0.16 μmol/min to 0.20 μmol/min, the V th raises from -0.67 V to -0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage. Project supported by the National Natural Sciences Foundation of China (Nos. 61376090, 61306008) and the National High Technology Program of China (No. 2014AA032606).

  1. Ultraviolet Phototransistors on AlGaN/GaN Heterostructures

    Institute of Scientific and Technical Information of China (English)

    CHEN Chen; JIANG Wen-Hai; REN Chun-Jiang; LI Zhong-Hui; JIAO Gang; DONG Xun; CHEN Tang-Sheng

    2007-01-01

    We report on the fabrication and characterization of phototransistors based on AlGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions: as a high electron mobility transistor (HEMT) and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170 mS/mm, while the minimum cutoff frequency fT and the maximum oscillation frequency fm axe 19 and 35 GHz, respectively.As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude,and a responsivity as high as 1700 A/W at the wavelength of 362nm.

  2. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao

    2016-01-01

    The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

  3. Medium energy proton radiation damage to (AlGa)As-GaAs solar cells

    Science.gov (United States)

    Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.

    1982-01-01

    The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells. The cell degradation is directly related to the penetration of depth of protons with GaAs. The influence of periodic and continuous thermal annealing on the GaAs solar cells was investigated.

  4. SEMICONDUCTOR DEVICES: AlGaN/GaN double-channel HEMT

    Science.gov (United States)

    Si, Quan; Yue, Hao; Xiaohua, Ma; Pengtian, Zheng; Yuanbin, Xie

    2010-04-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied.

  5. Blue light emission from the heterostructured ZnO/InGaN/GaN

    OpenAIRE

    Wang, Ti; WU Hao; Wang, Zheng; Chen, Chao; Liu, Chang

    2013-01-01

    ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity r...

  6. Brittle-Ductile Relaxation Kinetics of Strained AlGaN/GaN

    Energy Technology Data Exchange (ETDEWEB)

    CHASON, E.; FLORO, JERROLD A.; FOLLSTAEDT, DAVID M.; HAN, JUNG; HEARNE, SEAN JOSEPH; LEE, STEPHEN R.; TSONG, I.S.T.

    1999-10-05

    The authors have directly measured the stress evolution during metal organic chemical vapor deposition of AlGaN/GaN heterostructures on sapphire. In situ stress measurements were correlated with ex situ microstructural analysis to directly determine a critical thickness for cracking and the subsequent relaxation kinetics of tensile-strained Al{sub x}Ga{sub 1{minus}x}N on GaN. Cracks appear to initiate the formation of misfit dislocations at the AlGaN/GaN interface, which account for the majority of the strain relaxation.

  7. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

    Science.gov (United States)

    2015-02-01

    Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers by Randy P Tompkins and Danh Nguyen Approved for...High Electron Mobility Transistor (HEMT) Wafers by Randy P. Tompkins Sensors and Electron Devices Directorate Danh Nguyen Lehighton...Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  8. Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    CHEN Peng; ZHENG You-Dou; JIANG Shu-Sheng; FENG Duan; Z. C. Huang; SHEN Bo; ZHU Jian-Min; CHEN Zhi-Zhong; ZHOU Yu-Gang; XIE Shi-Yong; ZHANG Rong; HAN Ping; GU Shu-Lin

    2000-01-01

    Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those dowains locate near the bunched steps,and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3 nm thick, can also be observed between the GaN buffer layer and the Si substrate.

  9. Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

    Science.gov (United States)

    Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

    2016-09-01

    Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

  10. Hawaiian Islands Wilderness proposal announcement

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This document is a letter from the Bureau of Sport Fisheries and Wildlife stating that documents pertaining to the Hawaiian Islands Wilderness proposal have been...

  11. Papahanaumokuakea - Laysan Island Restoration 2011

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This project supports restoration activities at Laysan Island. Staff and volunteers continue efforts to eradicate alien invasive species such as Indian dropseed...

  12. Synthesizing knowledge of ocean islands

    Science.gov (United States)

    Jefferson, Anne J.; Lees, Jonathan M.; McClinton, Tim

    2011-11-01

    AGU Chapman Conference on the Galápagos as a Laboratory for the Earth Sciences; Puerto Ayora, Galápagos, Ecuador, 25-30 July 2011 An inspiration for Darwin's theory of evolution, the Galápagos Islands and surrounding waters are a natural laboratory for a wide range of Earth science topics. The Galápagos are perfectly situated for geophysical and geochemical investigations of deep-Earth processes at a hot spot, and proximity to a spreading center allows exploration of hot spot-ridge interactions. Several highly active volcanoes show rapid deformation facilitating investigation of melt transport paths and volcanic structure. The islands exhibit a range of ages, eruptive styles, and climatic zones that allow analysis of hydrogeologic and geomorphic processes. The Galápagos Islands are a World Heritage Site and are an ideal setting for developing an integrated biological and geological understanding of ocean island evolution.

  13. Papahanaumokuakea - Laysan Island Restoration 2009

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This project will support restoration activities at Laysan Island. Staff and volunteers continue efforts to eradicate alien invasive species such as Indian dropseed...

  14. Papahanaumokuakea - Laysan Island Restoration 2010

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — The Goal of the Laysan Island Restoration is to restore Laysan to a "Pristine" state which would require minimal monitoring and habitat for Endemic Endangered...

  15. Three Mile Island Accident Data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Three Mile Island Accident Data consists of mostly upper air and wind observations immediately following the nuclear meltdown occurring on March 28, 1979, near...

  16. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    OpenAIRE

    Wang Yongjin; Hu Fangren; Hane Kazuhiro

    2011-01-01

    Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place wit...

  17. Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre [Laboratoire Charles Coulomb – UMR 5221, CNRS and University Montpellier, Case courier 074, 34095 Montpellier Cedex 5 (France); Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe [CRHEA-CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, rue Bernard Gregory, 06560 Valbonne (France)

    2015-09-21

    We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

  18. High-temperature characteristics of AixGa1-xN/GaN Schottky diodes

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiaoling; Li Fei; Lv Changzhi; Xie Xuesong; Li Ying; Mohammad S N

    2009-01-01

    High-temperature characteristics of the metal/AlxGa1_xN/GaN M/S/S (M/S/S) diodes have been studied with current-voltage (I-V) and capacitance-voltage (C-V) measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AIxGa1_xN/GaN interface, the AIxGa1_xN/GaNdiodes show properties distinctly different from those of the AIxGa1_xN diodes. For the AIxGa1_xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AIxGa1_xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse break-down voltage are superior for the AIxGa1_xN/GaN diodes to those for the AIxGa1_xN diodes.

  19. A roadmap for island biology

    DEFF Research Database (Denmark)

    Patino, Jairo; Whittaker, Robert J.; Borges, Paulo A.V.

    2017-01-01

    Aims: The 50th anniversary of the publication of the seminal book, The Theory of Island Biogeography, by Robert H. MacArthur and Edward O. Wilson, is a timely moment to review and identify key research foci that could advance island biology. Here, we take a collaborative horizon-scanning approach...... from biogeography, community ecology and evolution to global change, this horizon scan may help to foster the formation of interdisciplinary research networks, enhancing joint efforts to better understand the past, present and future of island biotas....... to identify 50 fundamental questions for the continued development of the field. Location: Worldwide. Methods: We adapted a well-established methodology of horizon scanning to identify priority research questions in island biology, and initiated it during the Island Biology 2016 conference held in the Azores....... Results: Questions were structured around four broad and partially overlapping island topics, including: (Macro)Ecology and Biogeography, (Macro)Evolution, Community Ecology, and Conservation and Management. These topics were then subdivided according to the following subject areas: global diversity...

  20. Rapid Melt Growth of Single Crystal InGaAs on Si Substrates

    Directory of Open Access Journals (Sweden)

    Xue Bai

    2016-01-01

    Full Text Available InGaAs integration on Si substrates is an important topic for next generation electronic devices. Rapid melt growth (RMG has the potential to grow defect-free lattice mismatched materials on Si at low cost. Most previous publications have focused on growing binary III–V compounds by RMG, but none have discussed ternary compound materials. In this paper, we demonstrate the RMG of the single crystal ternary compound InGaAs on Si substrates. We discuss two main issues. The first is segregation along the stripe length. An analytical model is developed to describe the segregation of In/Ga in the grown stripe and the model is compared with experimental data. The second issue is the dissolution of the Si seed region during RMG, which leads to formation of Si islands inside the InGaAs stripe. The results of this study are applicable to any compound material in which Si is soluble at the elevated temperatures required for RMG.

  1. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    Energy Technology Data Exchange (ETDEWEB)

    Kalentyeva, I. L., E-mail: vikhrova@nifti.unn.ru; Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  2. Archean Lithosphere Beneath Arctic Canada: Lu-Hf Isotope Systematics for Kimberlite-Hosted Garnet-Peridotites From Somerset Island

    Science.gov (United States)

    Schmidberger, S. S.; Simonetti, A.; Francis, D.; Gariepy, C.

    2001-05-01

    Knowledge of the age of lithospheric mantle underlying the continents provides valuable constraints for the timing of formation and stabilization of Archean cratons. This study reports Lu-Hf isotopic data for garnet-peridotites, and their constituent garnets, from the Nikos kimberlite (100 Ma) on Somerset Island in the Canadian Arctic obtained using a Micromass IsoProbe multicollector inductively coupled plasma mass spectrometer (MC-ICP-MS) at GEOTOP-UQAM. The low temperature peridotites (1100 C; 160-190 km) and their 176Hf/177Hf(0.1Ga) isotopic compositions (0.28265-0.28333; \\epsilonHf(0.1Ga)=-2 to +22) are less radiogenic than those of the shallow xenoliths. A Lu-Hf isochron for six peridotites yields a mid Archean age of 3.4\\pm0.3 Ga and an initial 176Hf/177Hf ratio of 0.28101\\pm24. The remaining peridotites (n=9), in contrast, are characterized by extremely high (+35) initial \\epsilonHf(3.4Ga) values, which correlate negatively with their 176Lu/177Hf ratios, suggesting addition of Hf as a result of metasomatic interaction with the host kimberlite. The garnets from the low temperature (3.4 Ga old) peridotites are characterized by high 176Lu/177Hf ratios and define an errorchron age of 1.4\\pm0.2 Ga, which may reflect re-equilibration of Hf during kimberlite magmatism.

  3. Eco-geomorphic processes that maintain a small coral reef island: Ballast Island in the Ryukyu Islands, Japan

    Science.gov (United States)

    Kayanne, Hajime; Aoki, Kenji; Suzuki, Takuya; Hongo, Chuki; Yamano, Hiroya; Ide, Yoichi; Iwatsuka, Yuudai; Takahashi, Kenya; Katayama, Hiroyuki; Sekimoto, Tsunehiro; Isobe, Masahiko

    2016-10-01

    Landform changes in Ballast Island, a small coral reef island in the Ryukyu Islands, were investigated by remote sensing analysis and a field survey. The area of the island almost doubled after a mass coral bleaching event in 1998. Coral branches generated by the mass mortality and broken by waves were delivered and stocked on a reef flat and accumulated to expand the area of the island. In 2012 high waves generated by typhoons also changed the island's topography. Overall, the island moved in the downdrift direction of the higher waves. Waves impacting both sides of the island piled up a large volume of coral gravels above the high-tide level. Eco-geomorphic processes, including a supply of calcareous materials from the corals on the same reef especially during stormy wave conditions, were key factors in maintaining the dynamic topographic features of this small coral reef island.

  4. A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

    Institute of Scientific and Technical Information of China (English)

    Cai Jinbao; Wang Jinyan; Liu Yang; Xu Zhe; Wang Maojun; Yu Min; Xie Bing

    2013-01-01

    A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation followed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700 ℃ could be etched off in a homothermal (70 ℃) KOH solution while the KOH solution had no etching effects on the region of the A1GaN/GaN heterostructure protected by a SiO2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900 ℃ followed by 30 min treatment in 70 ℃ KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.

  5. GaAsP solar cells on GaP/Si with low threading dislocation density

    Science.gov (United States)

    Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan; Lee, Minjoo Larry

    2016-07-01

    GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

  6. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  7. Aleutian Canada goose transplant from Buldir Island to Agattu Island, Aleutian Islands, Alaska, summer 1984

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Geese were captured on Buldir Island by searching the upper and lower edge of the lowland tall plant association where tall plants offer cover and short plants offer...

  8. InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells

    Science.gov (United States)

    Mintairov, S. A.; Kalyuzhnyy, N. A.; Maximov, M. V.; Nadtochiy, A. M.; Zhukov, A. E.

    2017-01-01

    MOCVD-grown GaAs single-junction solar cells (SC) with quantum well-dots (QWD) were fabricated and tested. The QWD were formed by the deposition of In0.4Ga0.6As layers separated with GaAs spacers. A remarkable improvement of photocurrent was achieved and the reduction of open-circuit voltage was partly suppressed by decreasing the spacers’ growth rate as well as increasing their thickness up to 40 nm. Based on the experimentally obtained characteristics of these single-junction SCs we estimated that using QWD media in the middle (GaAs-based) subcell can provide 1 abs. %, increasing the efficiency of the triple-junction GaInP/GaAs/Ge SCs.

  9. AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2002-12-01

    This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  10. Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gladysiewicz, M., E-mail: marta.gladysiewicz@pwr.edu.pl; Janicki, L.; Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Siekacz, M.; Cywinski, G. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw (Poland)

    2015-12-28

    Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaN layers.

  11. GaSb on GaAs solar cells Grown using interfacial misfit arrays (Conference Presentation)

    Science.gov (United States)

    Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh Babu B.; Huffaker, Diana L.; Hubbard, Seth M.

    2017-04-01

    State of the art InGaP2/GaAs/In0.28Ga0.72As inverted metamorphic (IMM) solar cells have achieved impressive results, however, the thick metamorphic buffer needed between the lattice matched GaAs and lattice mismatched InGaAs requires significant effort and time to grow and retains a fairly high defect density. One approach to this problem is to replace the bottom InGaAs junction with an Sb-based material such as 0.73 eV GaSb or 1.0 eV Al0.2Ga0.8Sb. By using interfacial misfit (IMF) arrays, the high degree of strain (7.8%) between GaAs and GaSb can be relaxed solely by laterally propagating 90° misfit dislocations that are confined to the GaAs-GaSb interface layer. We have used molecular beam epitaxy to grow GaSb single junction solar cells homoepitaxially on GaSb and heteroepitaxially on GaAs using IMF. Under 15-sun AM1.5 illumination, the control cell achieved 5% efficiency with a WOC of 366 mV, while the IMF cell was able to reach 2.1% with WOC of 546 mV. Shunting and high non-radiative dark current were main cause of FF and efficiency loss in the IMF devices. Threading dislocations or point defects were the expected source behind the losses, leading to minority carrier lifetimes less than 1ns. Deep level transient spectroscopy (DLTS) was used to search for defects electrically and two traps were found in IMF material that were not detected in the homoepitaxial GaSb device. One of these traps had a trap density of 7 × 1015 cm-3, about one order of magnitude higher than the control cell defect at 4 × 1016 cm-3.

  12. Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

    DEFF Research Database (Denmark)

    Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

    Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.......Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction....

  13. Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

    Science.gov (United States)

    Dixit, Ripudaman; Tyagi, Prashant; Kushvaha, Sunil Singh; Chockalingam, Sreekumar; Yadav, Brajesh Singh; Sharma, Nita Dilawar; Kumar, M. Senthil

    2017-04-01

    We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700 °C. The GaN epitaxial layers are found to have a large in-plane compressive stress of about 1 GPa for low growth temperatures but the strain drastically reduced in the layer grown at 700 °C. The nature of the in-plane strain has been analyzed using high resolution x-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements. From AFM, a change in GaN growth mode from grain to island is observed at the high growth temperature above 600 °C. A blue shift of 20-30 meV in near band edge PL emission line has been noticed for the GaN layers containing the large in-plane strain. These observations indicate that the in-plane strain in the GaN layers is dominated by a biaxial strain. Using nanoindentation, it is found that the indentation hardness and Young's modulus of the GaN layers increases with increasing growth temperature. The results disclose the critical role of growth mode in determining the in-plane strain and mechanical properties of the GaN layers grown by LMBE technique.

  14. Volcanic hazard on Deception Island (South Shetland Islands, Antarctica)

    Science.gov (United States)

    Bartolini, S.; Geyer, A.; Martí, J.; Pedrazzi, D.; Aguirre-Díaz, G.

    2014-09-01

    Deception Island is the most active volcano in the South Shetland Islands and has been the scene of more than twenty identified eruptions over the past two centuries. In this contribution we present the first comprehensive long-term volcanic hazard assessment for this volcanic island. The research is based on the use of probabilistic methods and statistical techniques to estimate volcanic susceptibility, eruption recurrence and the most likely future eruptive scenarios. We perform a statistical analysis of the time series of past eruptions and the spatial extent of their products, including lava flows, fallout, pyroclastic density currents and lahars. The Bayesian event tree statistical method HASSET is applied to calculate eruption recurrence, while the QVAST tool is used in an analysis of past activity to calculate the possibility that new vents will open (volcanic susceptibility). On the basis of these calculations, we identify a number of significant scenarios using the GIS-based VORIS 2.0.1 and LAHARZ software and evaluate the potential extent of the main volcanic hazards to be expected on the island. This study represents a step forward in the evaluation of volcanic hazard on Deception Island and the results obtained are potentially useful for long-term emergency planning.

  15. Bryophytes from Simeonof Island in the Shumagin Islands, southwestern Alaska

    Science.gov (United States)

    Schofield, W.B.; Talbot, S. S.; Talbot, S.L.

    2004-01-01

    Simeonof Island is located south of the Alaska Peninsula in the hyperoceanic sector of the middle boreal subzone. We examined the bryoflora of Simeonof Island to determine species composition in an area where no previous collections had been reported. This field study was conducted in sites selected to represent the spectrum of environmental variation within Simeonof Island. Data were analyzed using published reports to compare bryophyte distribution patterns at three levels, the Northern Hemisphere, North America, and Alaska. A total of 271 bryophytes were identified: 202 mosses and 69 liverworts. The annotated list of species for Simeonof Island expands the known range for many species and fills distribution gaps within Hulte??n's Western Pacific Coast district. Maps and notes on the distribution of 14 significant distribution records are presented. Compared with bryophyte distribution in the Northern Hemisphere, the bryoflora of Simeonof Island primarily includes taxa of boreal (55%), temperate (20%), arctic (10%), and cosmopolitan (8%) distribution; 6% of the moss flora are western North America endemics. A description of the bryophytes present in the vegetation and habitat types is provided as is a quantitative analysis of the most frequently occurring bryophytes in crowberry heath.

  16. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy

    Science.gov (United States)

    Pristovsek, Markus; Poser, Florian; Richter, Wolfgang

    2016-07-01

    We studied diffusion by measuring step-bunching, island spacing, and the transition from step-flow growth to two-dimensional island growth of (001) GaAs in metal-organic vapour phase epitaxy and correlated them with the surface reconstruction measured by reflectance anisotropy spectroscopy. The V/III ratio had a small effect, while the square root of the growth rate was anti-proportional to the diffusion length. The thermal activation energy was about 2.3 eV on {{c}}(4× 4) terraces and 1.6 eV on (2× 4) domains at higher temperatures. Pronounced step-bunching coincided with large (4× 2) domains at the step-edges, causing smoother steps for the [11̅0] misorientation. This Ga-rich reconstruction at the step-edges is needed for the Schwoebel barrier to induce step-bunching. At higher temperatures of (2× 4) domains grow in size, the Schwoebel barrier reduces and nucleation becomes easier on this surface which reduces diffusion length and thus step-bunching.

  17. Growth morphology and structure of bismuth thin films on GaSb(110)

    DEFF Research Database (Denmark)

    Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

    1998-01-01

    Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I)-reconstructio...... that the (1 x 1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III-V compound semiconductors are also described by the epitaxial continued layer model. (C) 1998 Elsevier Science B.V. All rights reserved....

  18. Multiple Applications of GaAs semiconductors

    Science.gov (United States)

    Martel, Jenrené; Wonka, Willy

    2003-03-01

    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  19. On SA, CA, and GA numbers

    CERN Document Server

    Caveney, Geoffrey; Sondow, Jonathan

    2011-01-01

    Gronwall's function $G$ is defined for $n>1$ by $G(n)=\\frac{\\sigma(n)}{n \\log\\log n}$ where $\\sigma(n)$ is the sum of the divisors of $n$. We call an integer $N>1$ a \\emph{GA1 number} if $N$ is composite and $G(N) \\ge G(N/p)$ for all prime factors $p$ of $N$. We say that $N$ is a \\emph{GA2 number} if $G(N) \\ge G(aN)$ for all multiples $aN$ of $N$. In arXiv 1110.5078, we used Robin's and Gronwall's theorems on $G$ to prove that the Riemann Hypothesis (RH) is true if and only if 4 is the only number that is both GA1 and GA2. Here, we study GA1 numbers and GA2 numbers separately. We compare them with superabundant (SA) and colossally abundant (CA) numbers (first studied by Ramanujan). We give algorithms for computing GA1 numbers; the smallest one with more than two prime factors is 183783600, while the smallest odd one is 1058462574572984015114271643676625. We find nineteen GA2 numbers $\\le 5040$, and prove that a GA2 number $N>5040$ exists if and only if RH is false, in which case $N$ is even and $>10^{8576}$.

  20. Tetrabromidobis(dicyclohexylphosphane-κPdigallium(Ga—Ga

    Directory of Open Access Journals (Sweden)

    Dennis H. Mayo

    2012-10-01

    Full Text Available The title compound, a GaII dimer, [Ga2Br4(C12H23P2], was synthesized by reaction of GaBr(THFn (THF is tetrahydrofuran with dicyclohexylphosphine in toluene. At 150 K the crystallographically centrosymmetric molecule exhibits disorder in which one of the two independent cyclohexyl groups is modelled over two sites in a 62 (1:38 (1 ratio. In d6-benzene solution, the compound exhibits virtual C2h symmetry as determined by 1H NMR. The coordination environment of the GaII atom is distorted tetrahedral.

  1. Effect of Ga on the Wettability of CuGa10 on 304L Steel

    Science.gov (United States)

    Silze, Frank; Wiehl, Gunther; Kaban, Ivan; Kühn, Uta; Eckert, Jürgen; Pauly, Simon

    2015-08-01

    In the present work, the effect of Ga on the wetting behavior of the Cu-rich braze filler CuGa10 (wt pct, Cu90.8Ga9.2 at. pct) on the steel 304L was investigated. For this, the macroscopic and microscopic effects governing the wetting of pure Ga, pure Cu, and CuGa10 alloy (wt pct) on the austenitic steel were analyzed and compared. Contact angle and surface tension measurements were carried out by means of the sessile drop technique, and, in addition, the phase formation at the interface was determined. Pure liquid Ga spreads on 304L, which supposedly is related to the formation of intermetallic Fe-Ga phases growing into the liquid Ga. Depending on the annealing time, FeGa3 and Fe14.5Ga12 were identified. In contrast, CuGa10 as well as pure Cu shows secondary wetting on the steel surface. Especially, liquid Cu prefers spreading laterally and vertically along the grain boundaries of the steel substrate. In spite of rather similar mechanisms, CuGa10 wets 304L steel at lower rate than pure Cu above the liquidus temperature.

  2. Element specific investigation of ultrathin Co2MnGa/GaAs heterostructures

    DEFF Research Database (Denmark)

    Claydon, Jill S.; Hassan, Sameh; Damsgaard, Christian Danvad;

    2007-01-01

    We have used x-ray magnetic circular dichroism to study the element specific magnetic properties of ultrathin films of the Heusler alloy Co2MnGa at room temperature. Nine films were grown by molecular beam epitaxy on GaAs substrates and engineered to vary in stoichiometry as Co1.86Mn0.99Ga1, Co1...

  3. Ga self-diffusion in isotopically enriched GaAs heterostructures doped with Si and Zn

    Energy Technology Data Exchange (ETDEWEB)

    Norseng, Marshall Stephen [Univ. of California, Berkeley, CA (United States)

    1999-12-01

    This study attempts to advance the modeling of AlGaAs/GaAs/AlAs diffusion by experimental investigation of Ga self-diffusion in undoped, as-grown doped and Zinc diffused structures. We utilize novel, isotopically enriched superlattice and heterostructure samples to provide direct observation and accurate measurement of diffusion with a precision not possible using conventional techniques.

  4. Mammals evolve faster on smaller islands.

    Science.gov (United States)

    Millien, Virginie

    2011-07-01

    Island mammals often display remarkable evolutionary changes in size and morphology. Both theory and empirical data support the hypothesis that island mammals evolve at faster rates than their mainland congeners. It is also often assumed that the island effect is stronger and that evolution is faster on the smallest islands. I used a dataset assembled from the literature to test these assumptions for the first time. I show that mammals on smaller islands do indeed evolve more rapidly than mammals on larger islands, and also evolve by a greater amount. These results fit well the theory of an evolutionary burst due to the opening of new ecological opportunities on islands. This evolutionary burst is expected to be the strongest on the smallest islands where the contrast between the island and the mainland environments is the most dramatic.

  5. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

    Science.gov (United States)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

    2016-12-01

    The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

  6. Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

    Science.gov (United States)

    Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

    2014-09-01

    GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

  7. Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

    Science.gov (United States)

    Yang, Lin'an; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue

    2016-04-01

    Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al0.15Ga0.85N emitter barrier and a 1.7-nm-thick Al0.25Ga0.75N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al0.2Ga0.8N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In0.03Ga0.97N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

  8. Late Quaternary climate change shapes island biodiversity

    DEFF Research Database (Denmark)

    Weigelt, Patrick; Steinbauer, Manuel; Cabral, Juliano

    2016-01-01

    Island biogeographical models consider islands either as geologically static with biodiversity resulting from ecologically neutral immigration–extinction dynamics1, or as geologically dynamic with biodiversity resulting from immigration–speciation–extinction dynamics influenced by changes in island...... sea levels3, 4 and caused massive changes in island area, isolation and connectivity5, orders of magnitude faster than the geological processes of island formation, subsidence and erosion considered in island theory2, 6. Consequences of these oscillations for present biodiversity remain unassessed5, 7...

  9. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Fireman, Micha N.; Browne, David A.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2016-02-07

    The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditions that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.

  10. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

    Institute of Scientific and Technical Information of China (English)

    WANG Bao-Zhu; LI Jin-Min; WANG Zhan-Guo; WANG Xiao-Liang; HU Guo-Xin; RAN Jun-Xue; WANG Xin-Hua; GUO Lun-Chun; XIAO Hong-Ling; LI Jian-Ping; ZENG Yi-Ping

    2006-01-01

    @@ Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition (MOCVD).Rapid thermal annealing (RTA) treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AlGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4×103 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7×1017 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.

  11. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

    Science.gov (United States)

    Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

    2016-10-01

    In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

  12. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

    OpenAIRE

    Taliercio, Thierry; Gallart, Mathieu; Lefebvre, Pierre; Morel, Aurélien; Gil, Bernard; Allègre, Jacques; Grandjean, Nicolas; Massies, Jean; Grzegory, Izabella; Porowsky, Sylvester

    2001-01-01

    International audience; We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

  13. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

    Institute of Scientific and Technical Information of China (English)

    Ji Panfeng; Liu Naixin; Wei Tongbo; Liu Zhe; Lu Hongxi; Wang Junxi; Li Jinmin

    2011-01-01

    With an n-AlGaN (4 nm)/GaN (4 nm) superlattice (SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-A1GaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL.The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-A1GaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543 μA,and the electro-static discharge (ESD) pass yield of an LED at human body mode (HBM)-ESD impulses of 2000 V increases from 60% to 90%.

  14. InGaN light-emitting diodes with embedded nanoporous GaN distributed Bragg reflectors

    Science.gov (United States)

    Shieh, Bing-Cheng; Jhang, Yuan-Chang; Huang, Kun-Pin; Huang, Wan-Chun; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

    2015-08-01

    InGaN-based light-emitting diodes (LEDs) with embedded conductive nanoporous GaN/undoped GaN (NP-GaN/u-GaN) distributed Bragg reflectors (DBRs) were demonstrated. Nanoporous GaN DBR structures were fabricated by pulsed 355 nm laser scribing and electrochemical etching processes. Heavily Si-doped n-type GaN:Si layers (n+-GaN) in an eight-period n+-GaN/u-GaN stack structure were transformed into a low-refractive-index, conductive nanoporous GaN structure. The measured center wavelength, peak reflectivity, and bandwidth of the nanoporous GaN DBR structure were 417 nm, 96.7%, and 34 nm, respectively. Resonance cavity modes of the photoluminescence spectra were observed in the treated LED structure with the nanoporous DBR structure.

  15. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Science.gov (United States)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  16. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.

    Science.gov (United States)

    Borysiuk, J; Zytkiewicz, Z R; Sobanska, M; Wierzbicka, A; Klosek, K; Korona, K P; Perkowska, P S; Reszka, A

    2014-04-04

    The growth mode and structural and optical properties of novel type of inclined GaN nanowires (NWs) grown by plasma-assisted MBE on Si(001) substrate were investigated. We show that due to a specific nucleation mechanism the NWs grow epitaxially on the Si substrate without any Si(x)N(y) interlayer, first in the form of zinc-blende islands and then as double wurtzite GaN nanorods with Ga-polarity. X-ray measurements show that orientation of these nanowires is epitaxially linked to the symmetry of the substrate so that [0001] axis of w-GaN nanowire is directed along the [111]Si axis. This is different from commonly observed behavior of self-induced GaN NWs that are N-polar and grow perpendicularly to the surface of nitridized silicon substrate independently on its orientation. The inclined NWs exhibit bright luminescence of bulk donor-bound excitons (D(0)X) at 3.472 eV and exciton-related peak at 3.46 eV having a long lifetime (0.7 ns at 4 K) and observable up to 50 K.

  17. Studies of Ga NMR and NQR in SrGa4

    Science.gov (United States)

    Niki, H.; Higa, N.; Nakamura, S.; Kuroshima, H.; Toji, T.; Yogi, M.; Nakamura, A.; Hedo, M.; Nakama, T.; Ōnuki, Y.; Harima, H.

    2015-04-01

    In order to microscopically investigate the properties in SrGa4, the Ga NMR measurements of a powder sample were carried out. The Ga NMR spectra corresponding to Ga(I) and Ga(II) sites are obtained. The NMR spectra of 69&71Ga (a nuclear spin I = 3/2) in the powder sample of SrGa4 do not take a typical powder pattern caused by the NQR interaction, but take the spectra consisting of three well resolved resonance-lines, which indicates that the nonuniform distribution of crystal orientation in the powder sample occurs because of the magnetic anisotropy. From the analysis of the Ga NMR spectrum, it is found that the ab-plane of the crystal is parallel to the external magnetic field, which would be attributed to the anisotropy of the magnetic susceptibility with the easy axis parallel to the ab-plane. This result is also confirmed by the 69Ga NQR in SrGa4. The Knight shifts of the 69Ga(I) and 69Ga(II) shift slightly to the negative side with decreasing temperature due to the core polarization of the d-electrons. The values of the Knight shift of the 69Ga(I) and 69Ga(II) are 0.01 and -0.11 % at 4.2 K, and 0.09 and -0.08 % at 300 K, respectively. The values of the 1/ T 1 T of the NMR of both 69Ga(I) and 69Ga(II) are almost constant between 4.2 and 100 K, whose values are 1.5 s -1 K -1 at 69Ga(I) and 0.12 s -1 K -1 at 69Ga(II), while the 1/ T 1 T slightly increase above 100K with increasing temperature. The value of T 1 of 69Ga(I) is one order of magnitude less than that of 69Ga(II).

  18. Studies of Ga NMR and NQR in SrGa{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Niki, H., E-mail: niki@sci.u-ryukyu.ac.jp; Higa, N.; Nakamura, S.; Kuroshima, H.; Toji, T.; Yogi, M.; Nakamura, A.; Hedo, M.; Nakama, T.; Ōnuki, Y. [University of the Ryukyus, Faculty of Science (Japan); Harima, H. [Kobe University, Faculty of Science (Japan)

    2015-04-15

    In order to microscopically investigate the properties in SrGa{sub 4}, the Ga NMR measurements of a powder sample were carried out. The Ga NMR spectra corresponding to Ga(I) and Ga(II) sites are obtained. The NMR spectra of {sup 69&71}Ga (a nuclear spin I = 3/2) in the powder sample of SrGa{sub 4} do not take a typical powder pattern caused by the NQR interaction, but take the spectra consisting of three well resolved resonance-lines, which indicates that the nonuniform distribution of crystal orientation in the powder sample occurs because of the magnetic anisotropy. From the analysis of the Ga NMR spectrum, it is found that the ab-plane of the crystal is parallel to the external magnetic field, which would be attributed to the anisotropy of the magnetic susceptibility with the easy axis parallel to the ab-plane. This result is also confirmed by the {sup 69}Ga NQR in SrGa{sub 4}. The Knight shifts of the {sup 69}Ga(I) and {sup 69}Ga(II) shift slightly to the negative side with decreasing temperature due to the core polarization of the d-electrons. The values of the Knight shift of the {sup 69}Ga(I) and {sup 69}Ga(II) are 0.01 and –0.11 % at 4.2 K, and 0.09 and –0.08 % at 300 K, respectively. The values of the 1/ T{sub 1}T of the NMR of both {sup 69}Ga(I) and {sup 69}Ga(II) are almost constant between 4.2 and 100 K, whose values are 1.5 s {sup −1}K{sup −1} at {sup 69}Ga(I) and 0.12 s {sup −1}K{sup −1} at {sup 69}Ga(II), while the 1/ T{sub 1}T slightly increase above 100K with increasing temperature. The value of T{sub 1} of {sup 69}Ga(I) is one order of magnitude less than that of {sup 69}Ga(II)

  19. Methods of Ga droplet consumption for improved GaAs nanowire solar cell efficiency

    Science.gov (United States)

    Dastjerdi, M. H. T.; Boulanger, J. P.; Kuyanov, P.; Aagesen, M.; LaPierre, R. R.

    2016-11-01

    We describe methods of Ga droplet consumption in Ga-assisted GaAs nanowires, and their impact on the crystal structure at the tip of nanowires. Droplets are consumed under different group V flux conditions and the resulting tip crystal structure is examined by transmission electron microscopy. The use of GaAsP marker layers provides insight into the behavior of the Ga droplet during different droplet consumption conditions. Lower group V droplet supersaturations lead to a pure zincblende stacking-fault-free tip crystal structure, which improved the performance of a nanowire-based photovoltaic device.

  20. Aleutian Canada goose survey at Alaid and Nizki Islands, Near Island Group, Aleutian Islands, Alaska, spring 1984

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Arctic foxes, introduced to Alaid and Nizki islands in 1911, 1920 and 1935, were removed from the two islands in 1975 and 1976 by means of shooting and trapping...

  1. Parker River National Wildlife Refuge Plum Island (Pond Island, Thacher's Island Refuges): Annual narrative report: Calendar year 1991

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Parker River NWR, Pond Island NWR, and Tacher's Island NWR outlines Refuge accomplishments during the 1991 calendar year. The report...

  2. Parker River National Wildlife Refuge Plum Island (Pond Island, Thacher's Island Refuges): Annual narrative report: Calendar year 1990

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Parker River NWR, Pond Island NWR, and Tacher's Island NWR outlines Refuge accomplishments during the 1990 calendar year. The report...

  3. Parker River National Wildlife Refuge Plum Island (Pond Island, Thacher's Island Refuges): Annual narrative report: Calendar year 1990

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Parker River NWR, Pond Island NWR, and Tacher's Island NWR outlines Refuge accomplishments during the 1990 calendar year. The report...

  4. CRED 10m Gridded multibeam bathymetry of Maug Island(s), Commonwealth of the Northern Mariana Islands (CNMI).

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Gridded bathymetry shelf, bank and slope environments of Maug Island(s), CNMI. Bottom coverage was achieved in depths between 4 and 3275 meters. This 10-m grid also...

  5. Parker River National Wildlife Refuge Plum Island (Pond Island, Thacher's Island Refuges): Annual narrative report: Calendar year 1989

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Parker River NWR, Pond Island NWR, and Tacher's Island NWR outlines Refuge accomplishments during the 1989 calendar year. The report...

  6. Parker River National Wildlife Refuge Plum Island (Pond Island, Thacher's Island Refuges): Annual narrative report: Calendar year 1988

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Parker River NWR, Pond Island NWR, and Tacher's Island NWR outlines Refuge accomplishments during the 1988 calendar year. The report...

  7. Parker River National Wildlife Refuge Plum Island (Pond Island, Thacher's Island Refuges): Annual narrative report: Calendar year 1991

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Parker River NWR, Pond Island NWR, and Tacher's Island NWR outlines Refuge accomplishments during the 1991 calendar year. The report...

  8. Late Quaternary climate change shapes island biodiversity.

    Science.gov (United States)

    Weigelt, Patrick; Steinbauer, Manuel Jonas; Cabral, Juliano Sarmento; Kreft, Holger

    2016-04-07

    Island biogeographical models consider islands either as geologically static with biodiversity resulting from ecologically neutral immigration-extinction dynamics, or as geologically dynamic with biodiversity resulting from immigration-speciation-extinction dynamics influenced by changes in island characteristics over millions of years. Present climate and spatial arrangement of islands, however, are rather exceptional compared to most of the Late Quaternary, which is characterized by recurrent cooler and drier glacial periods. These climatic oscillations over short geological timescales strongly affected sea levels and caused massive changes in island area, isolation and connectivity, orders of magnitude faster than the geological processes of island formation, subsidence and erosion considered in island theory. Consequences of these oscillations for present biodiversity remain unassessed. Here we analyse the effects of present and Last Glacial Maximum (LGM) island area, isolation, elevation and climate on key components of angiosperm diversity on islands worldwide. We find that post-LGM changes in island characteristics, especially in area, have left a strong imprint on present diversity of endemic species. Specifically, the number and proportion of endemic species today is significantly higher on islands that were larger during the LGM. Native species richness, in turn, is mostly determined by present island characteristics. We conclude that an appreciation of Late Quaternary environmental change is essential to understand patterns of island endemism and its underlying evolutionary dynamics.

  9. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

    Science.gov (United States)

    2010-05-17

    properties of AlGaN/ GaN HEMTs grown on SiC sub- strates [11,15], and that these effects may vary with the proximity of the doped layer to the two...properties of Al- GaN / GaN HEMTs grown by rf-MBE on native GaN substrates. 2. Experimental Seven AlGaN/ GaN heterostructures were grown by rf-plasma assisted...buffer needs to include Be-doped GaN isolation layers in MBE-grown AlGaN/ GaN HEMTs and must be separated from the 2DEG by 200 nm to 500 nm. Acknowledgments

  10. Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

    Science.gov (United States)

    Ageev, O. A.; Solodovnik, M. S.; Balakirev, S. V.; Mikhaylin, I. A.; Eremenko, M. M.

    2016-08-01

    The GaAs native oxide effect upon the surface morphology of the GaAs epitaxial layer was studied with taking into account the main growth parameters of MBE technology: substrate temperature, effective As4/Ga flux ratio and growth rate. The MBE modes of atomically smooth and rough surfaces and surfaces with Ga droplet array formation were determined. The possibility of the obtaining of GaAs nanowires via GaAs native oxide layer was shown.

  11. Bulk ammonothermal GaN

    Science.gov (United States)

    Dwiliński, R.; Doradziński, R.; Garczyński, J.; Sierzputowski, L. P.; Puchalski, A.; Kanbara, Y.; Yagi, K.; Minakuchi, H.; Hayashi, H.

    2009-05-01

    In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10 3 cm -2) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m, whereas better crystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec.

  12. URBAN HEAT ISLAND AEROSPACE STUDIES

    Directory of Open Access Journals (Sweden)

    M. Y. Grishchenko

    2013-01-01

    Full Text Available  Modern cities are characterized by special urban landscape and special urban climate. Urban heat island is a phenomenon closely associated with urban territories. There are many methods developed for studying urban heat island, they can be combined into two groups: imagery-based methods and physicomathematical methods. Using spatial imagery can provide revealing thermal anomalies evolution in time and space, spatial distribution of various thermal anomalies, differences in quantitative measures of various thermal anomalies. Despite the fact that imagery-based methods are seemed to be very widespread among scientists all over the world, still there are some problems with using spatial imagery. The best spatial resolution of accessible thermal imagery is 60 m (ETM+ sensor, and sometimes it is not enough for urban studies (many urban objects have smaller dimensions. The problem of urban heat island is rather serious in modern world, and it needs data of very good quality.

  13. "Mosquitoes collected on Weno Island, Romonum Island and Piis Island, Chuuk State, Federated States of Micronesia (Diptera : Culicidae)"

    OpenAIRE

    "NODA, Shinichi"

    2013-01-01

    Mosquito larval surveys were carried out on Weno Island, Romonum Island and Piis Island in August 2011. Larvae were collected from 133 natural and artificial habitats. A total of 1,761 larvae belonging to nine species including one unidentified species were collected. On Weno Island, eight species, Aedes hensilli, Ae. albopictus, Ae. lamelliferus, Aedes sp., Culex quinquefasciatus, Cx. carolinensis, Cx. annulirostris and Lutzia vorax, were collected. On Romonum Island,  four sp...

  14. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  15. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  16. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures.

    Science.gov (United States)

    Janicki, L; Kunert, G; Sawicki, M; Piskorska-Hommel, E; Gas, K; Jakiela, R; Hommel, D; Kudrawiec, R

    2017-02-02

    The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25-1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn(2+)/Mn(3+) impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to -0.028 ± 0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.

  17. Anelasticity of GaN Epitaxial Layer in GaN LED

    Science.gov (United States)

    Chung, C. C.; Yang, C. T.; Liu, C. Y.

    2016-10-01

    In this work, the anelasticity of the GaN layer in the GaN light-emitting-diode device was studied. The present results show that the forward-voltage of GaN LED increases with time, as the GaN light-emitting-diode was maintained at a constant temperature of 100 °C. We found that the increase of the forward-voltage with time attributes to the delay-response of the piezoelectric fields (internal electrical fields in GaN LED device). And, the delay-response of the internal electrical fields with time is caused by the anelasticity (time-dependent strain) of the GaN layer. Therefore, using the correlation of strain-piezoelectric-forward voltage, a plot of thermal strain of the GaN layer against time can be obtained by measuring the forward-voltage of the studied GaN LED against time. With the curves of the thermal strain of GaN epi-layers versus time, the anelasticity of the GaN compound can be studied. The key anelasticity parameter, characteristic relaxation time, of the GaN is defined to be 2623.76 min in this work.

  18. The NSF-RCN Urban Heat Island Network

    Science.gov (United States)

    Twine, T. E.; Snyder, P. K.; Hamilton, P.; Shepherd, M.; Stone, B., Jr.

    2015-12-01

    In much of the world cities are warming at twice the rate of outlying rural areas. The frequency of urban heat waves is projected to increase with climate change through the 21st century. Addressing the economic, environmental, and human costs of urban heat islands requires a better understanding of their behavior from many disciplinary perspectives. The goal of this four-year Urban Heat Island Network is to (1) bring together scientists studying the causes and impacts of urban warming, (2) advance multidisciplinary understanding of urban heat islands, (3) examine how they can be ameliorated through engineering and design practices, and (4) share these new insights with a wide array of stakeholders responsible for managing urban warming to reduce their health, economic, and environmental impacts. The NSF-RCN Urban Heat Island Network involves atmospheric scientists, engineers, architects, landscape designers, urban planners, public health experts, and education and outreach experts, who will share knowledge, evaluate research directions, and communicate knowledge and research recommendations to the larger research community as well as stakeholders engaged in developing strategies to adapt to and mitigate urban warming. The first Urban Climate Institute was held in Saint Paul, MN in July 2013 and focused on the characteristics of urban heat islands. Scientists engaged with local practitioners to improve communication pathways surrounding issues of understanding, adapting to, and mitigating urban warming. The second Urban Climate Institute was held in Atlanta, Georgia in July 2014 and focused on urban warming and public health. The third Urban Climate Institute was held in Athens, GA in July 2015 and focused on urban warming and the role of the built environment. Scientists and practitioners discussed strategies for mitigation and adaptation. Evaluation experts at the Science Museum of Minnesota have extensively evaluated the Institutes to inform other research

  19. The NSF-RCN Urban Heat Island Network

    Science.gov (United States)

    Snyder, P. K.; Twine, T. E.; Hamilton, P.; Shepherd, M.; Stone, B., Jr.

    2016-12-01

    In much of the world cities are warming at twice the rate of outlying rural areas. The frequency of urban heat waves is projected to increase with climate change through the 21st century. Addressing the economic, environmental, and human costs of urban heat islands requires a better understanding of their behavior from many disciplinary perspectives. The goal of this four-year Urban Heat Island Network is to (1) bring together scientists studying the causes and impacts of urban warming, (2) advance multidisciplinary understanding of urban heat islands, (3) examine how they can be ameliorated through engineering and design practices, and (4) share these new insights with a wide array of stakeholders responsible for managing urban warming to reduce their health, economic, and environmental impacts. The NSF-RCN Urban Heat Island Network involves atmospheric scientists, engineers, architects, landscape designers, urban planners, public health experts, and education and outreach experts, who will share knowledge, evaluate research directions, and communicate knowledge and research recommendations to the larger research community as well as stakeholders engaged in developing strategies to adapt to and mitigate urban warming. The first Urban Climate Institute was held in Saint Paul, MN in July 2013 and focused on the characteristics of urban heat islands. Scientists engaged with local practitioners to improve communication pathways surrounding issues of understanding, adapting to, and mitigating urban warming. The second Urban Climate Institute was held in Atlanta, Georgia in July 2014 and focused on urban warming and public health. The third Urban Climate Institute was held in Athens, GA in July 2015 and focused on urban warming and the role of the built environment. Scientists and practitioners discussed strategies for mitigation and adaptation. The fourth Institute was held in Saint Paul, MN in July 2016 and focused on putting research to practice. Evaluation experts

  20. Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates

    Institute of Scientific and Technical Information of China (English)

    SUN Zhencui; CAO Wentian; WEI Qinqin; WANG Shuyun; XUE Chengshan; SUN Haibo

    2005-01-01

    Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15min and nitrided at the temperature of 900℃ for 10, 15, and 20 min, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.

  1. Petit Manan National Wildlife Refuge and satellite stations Cross Island National Wildlife Refuge, Seal Island National Wildlife Refuge, Franklin Island National Wildlife Refuge, Pond Island National Wildlife [Refuge]: Annual narrative report: Calendar year 1991

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Petit Manan NWR, Cross Island NWR, Seal Island NWR, Franklin Island NWR, and Pond Island NWR outlines Refuge accomplishments during...

  2. 33 CFR 80.1122 - Channel Islands Harbor, CA.

    Science.gov (United States)

    2010-07-01

    ...) A line drawn from Channel Islands Harbor South Jetty Light 2 to Channel Islands Harbor Breakwater South Light 1. (b) A line drawn from Channel Islands Harbor Breakwater North Light to Channel Islands Harbor North Jetty Light 5....

  3. Petit Manan National Wildlife Refuge and satellite stations Cross Island National Wildlife Refuge, Seal Island National Wildlife Refuge, Franklin Island National Wildlife Refuge, Pond Island National Wildlife Refuge: Annual narrative report: Calendar year 1997

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Petit Manan NWR, Cross Island NWR, Seal Island NWR, Franklin Island NWR, and Pond Island NWR outlines Refuge accomplishments during...

  4. Petit Manan National Wildlife Refuge and satellite stations Cross Island National Wildlife Refuge, Seal Island National Wildlife Refuge, Franklin Island National Wildlife Refuge, Pond Island National Wildlife [Refuge]: Annual narrative report: Calendar year 1991

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Petit Manan NWR, Cross Island NWR, Seal Island NWR, Franklin Island NWR, and Pond Island NWR outlines Refuge accomplishments during...

  5. The Big Island of Hawaii

    Science.gov (United States)

    2002-01-01

    Boasting snow-covered mountain peaks and tropical forest, the Island of Hawaii, the largest of the Hawaiian Islands, is stunning at any altitude. This false-color composite (processed to simulate true color) image of Hawaii was constructed from data gathered between 1999 and 2001 by the Enhanced Thematic Mapper plus (ETM+) instrument, flying aboard the Landsat 7 satellite. The Landsat data were processed by the National Oceanographic and Atmospheric Administration (NOAA) to develop a landcover map. This map will be used as a baseline to chart changes in land use on the islands. Types of change include the construction of resorts along the coastal areas, and the conversion of sugar plantations to other crop types. Hawaii was created by a 'hotspot' beneath the ocean floor. Hotspots form in areas where superheated magma in the Earth's mantle breaks through the Earth's crust. Over the course of millions of years, the Pacific Tectonic Plate has slowly moved over this hotspot to form the entire Hawaiian Island archipelago. The black areas on the island (in this scene) that resemble a pair of sun-baked palm fronds are hardened lava flows formed by the active Mauna Loa Volcano. Just to the north of Mauna Loa is the dormant grayish Mauna Kea Volcano, which hasn't erupted in an estimated 3,500 years. A thin greyish plume of smoke is visible near the island's southeastern shore, rising from Kilauea-the most active volcano on Earth. Heavy rainfall and fertile volcanic soil have given rise to Hawaii's lush tropical forests, which appear as solid dark green areas in the image. The light green, patchy areas near the coasts are likely sugar cane plantations, pineapple farms, and human settlements. Courtesy of the NOAA Coastal Services Center Hawaii Land Cover Analysis project

  6. Orbital pseudotumor imaged with Ga-67 citrate

    Energy Technology Data Exchange (ETDEWEB)

    Jaikishen, P.; Bateman, J.L.; Shreeve, W.W. (Veterans Administration Medical Center, Northport, NY (USA))

    1989-11-01

    An orbital pseudotumor causing proptosis, diplopia, and gaze palsy was imaged with Ga-67 citrate and showed persistent intense activity for five days. This may be the first case of gallium uptake into an orbital pseudotumor to be reported in the literature. This case report demonstrates the use of Ga-67 citrate imaging in the early diagnostic workup of this disorder.

  7. Radiative and non-radiative recombination in GaInN/GaN quantum wells; Strahlende und nichtstrahlende Rekombination in GaInN/GaN-Quantenfilmen

    Energy Technology Data Exchange (ETDEWEB)

    Netzel, C.

    2007-02-08

    The studies presented in this thesis deal with the occurence of V defectsin GaInN/GaN quantum film structures grown by means of organometallic gas phase epitaxy, and the effects, which have the V defects respectively the GaInN quantum films on the V-defect facets on the emission and recombination properties of the whole GaInN/GaN quantum film structure. The V-defects themselves, inverse pyramidal vacancies with hexagonal base in the semiconductor layers, arise under suitable growth conditions around the percussion violations, which extend in lattice-mismatched growth of GaN on the heterosubstrates sapphire or silicon carbide starting in growth direction through the crystal. If GaInN layers are grown over V-defect dispersed layers on the (1-101) facets of the V defects and the (0001) facets, the growth front of the structure, different growth velocities are present, which lead to differently wide GaInN quantum films on each facets.

  8. Optical Properties of GaSb Nanofibers

    Directory of Open Access Journals (Sweden)

    Perez-Bergquist Alejandro

    2011-01-01

    Full Text Available Abstract Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion beam irradiation as a result of the formation of the amorphous nanofibers. A new mode is observed at ~155 cm-1 both from the unannealed and annealed GaSb nanofiber samples related to the A1g mode of Sb–Sb bond vibration. Room temperature PL measurements of the annealed nanofibers present a wide feature band at ~1.4–1.6 eV. The room temperature PL properties of the irradiated samples presents a large blue shift compared to bulk GaSb. Annealed nanofibers and annealed nanofibers with Au nanodots present two different PL peaks (400 and 540 nm, both of which may originate from Ga or O vacancies in GaO. The enhanced PL and new band characteristics in nanostructured GaSb suggest that the nanostructured fibers may have unique applications in optoelectronic devices.

  9. Origin of magnetostriction in Fe-Ga

    DEFF Research Database (Denmark)

    Mudivarthi, Chaitanya; Laver, Mark; Cullen, James

    2010-01-01

    This paper investigates the origin of large magnetostriction in Fe-Ga alloys using small-angle neutron scattering (SANS) and Kerr microscopy. The SANS data for a single-crystal, electron irradiated, and quenched Fe81Ga19 sample under externally applied magnetic and elastic fields revealed...

  10. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  11. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures.

    Science.gov (United States)

    Mazur, Yu I; Dorogan, V G; de Souza, L D; Fan, D; Benamara, M; Schmidbauer, M; Ware, M E; Tarasov, G G; Yu, S-Q; Marques, G E; Salamo, G J

    2014-01-24

    The structural and optical properties of GaAs1-xBix quantum wells (QWs) symmetrically clad by GaAs barriers with and without additional confining AlGaAs layers are studied. It is shown that a GaAs/GaAs1-xBix/GaAs QW with x ~ 4% and well width of ~ 4 nm grown by molecular beam epitaxy demonstrates efficient photoluminescence (PL) that becomes significantly more thermally stable when a cladding AlGaAs layer is added to the QW structure. The PL behavior for temperatures between 10 and 300 K and for excitation intensities varying by seven orders of magnitude can be well described in terms of the dynamics of excitons including carrier capture in the QW layer, thermal emission and diffusion into the cladding barriers. Understanding the role of these processes in the luminescence of dilute GaAs1-xBix QW structures facilitates the creation of highly efficient devices with reduced thermal sensitivity and low threshold current.

  12. Ca. 2.7 Ga ferropicritic magmatism: A record of Fe-rich heterogeneities during Neoarchean global mantle melting

    Science.gov (United States)

    Milidragovic, Dejan; Francis, Don

    2016-07-01

    Although terrestrial picritic magmas with FeOTOT ⩾13 wt.% are rare in the geological record, they were relatively common ca. 2.7 Ga during the Neoarchean episode of enhanced global growth of continental crust. Recent evidence that ferropicritic underplating played an important role in the ca. 2.74-2.70 Ga reworking of the Ungava craton provides the impetus for a comparison of ca. 2.7 Ga ferropicrite occurrences in the global Neoarchean magmatic record. In addition to the Fe-rich plutons of the Ungava craton, volumetrically minor ferropicritic flows, pyroclastic deposits, and intrusive rocks form parts of the Neoarchean greenstone belt stratigraphy of the Abitibi, Wawa, Wabigoon and Vermillion domains of the southern and western Superior Province. Neoarchean ferropicritic rocks also occur on five other Archean cratons: West Churchill, Slave, Yilgarn, Kaapvaal, and Karelia; suggesting that ca. 2.7 Ga Fe-rich magmatism was globally widespread. Neoarchean ferropicrites form two distinct groups in terms of their trace element geochemistry. Alkaline ferropicrites have fractionated REE profiles and show no systematic HFSE anomalies, broadly resembling the trace element character of modern-day ocean island basalt (OIB) magmas. Magmas parental to ca. 2.7 Ga alkaline ferropicrites also had high Nb/YPM (>2), low Al2O3/TiO2 (SNC) and howardite-eucrite-diogenite (HED) differentiated meteorites suggests, however, that the Fe-rich mantle may originate from the infall of Fe-rich chondritic meteorites. The occurrence of ca. 2.7 Ga Fe-rich rocks on at least six cratons that are commonly coeval with the more ubiquitous komatiites and Mg-tholeiites is consistent with the existence of heterogeneous Fe-rich "plums" throughout the Neoarchean mantle. The paucity of ferropicrites in the post-2.7 Ga geological record suggests that majority of these Fe-rich plums have been melted out during the global Neoarchean melting of the mantle.

  13. Holocene environmental change according to lake core in Fildes Peninsula of King George Island, Antarctica

    Institute of Scientific and Technical Information of China (English)

    李小梅; 袁宝印; 赵俊琳

    2002-01-01

    Lake core sampled from Xihu in Fildes Peninsula of King Gorge Island, Antarctica could reveal the environmental change of the district. The lake core(GA7) , 9.28 meters long ,was sectioned at an interval of 2 cm. Through measuring the organic carbon, magnetic susceptibility, granularity and organic carbon isotope of GA7, by use of 14C age it was estimated that there were four periods of high temperature in Fildes Peninsula: 4800-4400 aB.P., 3600-3350 aB.P.,2100-1800 aB.P. and 900 aB.P. - present. Meanwhile, results showed that there was a strikingly positive correlation between the content of organic carbon and that of organic carbon isotope(δC13org) which could be the substitute indicators of environmental temperature.

  14. Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhengyuan; Shen, Xiyang; Xiong, Huan; Li, Qingfei; Kang, Junyong; Fang, Zhilai [Xiamen University, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen (China); Lin, Feng; Yang, Bilan; Lin, Shilin [San' an Optoelectronics Co., Ltd, Xiamen (China); Shen, Wenzhong [Shanghai Jiao Tong University, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai (China); Zhang, Tong-Yi [Shanghai University, Shanghai University Materials Genome Institute and Shanghai Materials Genome Institute, Shanghai (China)

    2016-02-15

    Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment. (orig.)

  15. AlGaN/GaN HEMT技术与其专利申请分析研究

    Institute of Scientific and Technical Information of China (English)

    2016-01-01

    AlGaN/GaN HEMT器件在微波大功率和高温应用方面均具有明显的优势,已经成为当前研究的热点之一.本文介绍了AlGaN/GaN HEMT的工作原理,并结合全球与本国的关于AlGaN/GaN HEMT的相关专利申请情况,梳理出当AlGaN/GaN HEMT的专利申请趋势.

  16. Thin metal island plasmon sensor

    Science.gov (United States)

    Meriaudeau, Fabrice; Downey, Todd R.; Passian, A.; Oden, Patrick I.; Wig, A. G.; Crilly, P. B.; Mangeant, S.; Ferrell, Trinidad L.

    1998-12-01

    The effects of the local dielectric environment on the surface-plasmon resonances of annealed gold-island films are studied experimentally and modeled theoretically. Gold- island films were annealed at 600 degree(s)C to produce spheroidal shape particles which exhibit well-resolved resonances in polarized, angle-resolved, absorption spectra. These resonances are shifted in different amounts by the depolarization effect of the surrounding medium (liquids with various refraction indices). Cross-section calculations based upon non-retarded, single-particle, dielectric interaction for these various configurations are presented and found to be in good agreement with the experimental observations.

  17. Streamlined Islands in Ares Valles

    Science.gov (United States)

    2002-01-01

    (Released 10 June 2002) The Science Although liquid water is not stable on the surface of Mars today, there is substantial geologic evidence that large quantities of water once flowed across the surface in the distant past. Streamlined islands, shown here, are one piece of evidence for this ancient water. The tremendous force of moving water, possibly from a catastrophic flood, carved these teardrop-shaped islands within a much larger channel called Ares Valles. The orientation of the islands can be used as an indicator of the direction the water flowed. The islands have a blunt end that is usually associated with an obstacle, commonly an impact crater. The crater is resistant to erosion and creates a geologic barrier around which the water must flow. As the water flows past the obstacle, its erosive power is directed outward, leaving the area in the lee of the obstacle relatively uneroded. However, some scientists have also argued that the area in the lee of the obstacle might be a depositional zone, where material is dropped out of the water as it briefly slows. The ridges observed on the high-standing terrain in the leeward parts of the islands may be benches carved into the rock that mark the height of the water at various times during the flood, or they might be indicative of layering in the leeward rock. As the water makes its way downstream, the interference of the water flow by the obstacle is reduced, and the water that was diverted around the obstacle rejoins itself at the narrow end of the island. Therefore, the direction of the water flow is parallel to the orientation of the island, and the narrow end of the island points downstream. In addition to the streamlined islands, the channel floor exhibits fluting that is also suggestive of flowing water. The flutes (also known as longitudinal grooves) are also parallel to the direction of flow, indicating that the water flow was turbulent and probably quite fast, which is consistent with the hypothesized

  18. Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam

    Science.gov (United States)

    Ribeiro-Andrade, R.; Malachias, A.; Miquita, D. R.; Vasconcelos, T. L.; Kawabata, R.; Pires, M. P.; Souza, P. L.; Rodrigues, W. N.

    2017-03-01

    This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from 1015 to 1016 Ga+/cm2 were used and islands were grown for two sub-monolayer coverages. We observe the formation of clusters in the inner surfaces of the FIB produced cavities and show that for low doses templates the nanostructures are mainly coherent while templates created with large ion doses lead to the growth of incoherent islands with larger island density. The modified island growth is described by a simple model based on the surface potential and the net adatom flow to the cavities. We observe that obtained morphologies result from a competition between coarsening and coalescence mechanisms.

  19. Benthic Mapping in Long Island Sound

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — QTCView is used with an incorporated depthfinder to create a sonar map of the bottom to the west of the Charles Island, in Long Island Sound in Connecticut waters....

  20. Dredged Material Management in Long Island Sound

    Science.gov (United States)

    Information on Western and Central Long Island Sound Dredged Material Disposal Sites including the Dredged Material Management Plan and Regional Dredging Team. Information regarding the Eastern Long Island Sound Selected Site including public meetings.

  1. Bair Island Restoration Project Monitoring Plan 2003

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Bair Island is located adjacent to the San Francisco Bay in Redwood City, San Mateo County, California (Figure 1). Historically, Bair Island was part of a large...

  2. Bair Island Restoration Project Monitoring Plan 2004

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Bair Island is located adjacent to the San Francisco Bay in Redwood City, San Mateo County, California (Figure 1). Historically, Bair Island was part of a large...

  3. Submarine physiography off Lakshadweep Islands, Arabian Sea

    Digital Repository Service at National Institute of Oceanography (India)

    Chauhan, O.S.; Chaubey, A.K.

    Analysis of echosoundings, side scan sonar and shallow seismic data, supplementEd. by 152 sediment samples, collected along 150 km around Lakshadweep Islands, Arabian Sea, revealed that the islands have a very narrow shelf, and an abrupt, shelf...

  4. Libraries in Rhode Island: MedlinePlus

    Science.gov (United States)

    ... this page: https://medlineplus.gov/libraries/rhodeisland.html Libraries in Rhode Island To use the sharing features ... Island Hospital / a Lifespan Partner Peters Health Sciences Library 593 Eddy Street Providence, RI 02903-4971 401- ...

  5. Obesity and Native Hawaiians/Pacific Islanders

    Science.gov (United States)

    ... Population Profiles > Native Hawaiian/Other Pacific Islander > Obesity Obesity and Native Hawaiians/Pacific Islanders Native Hawaiians/Pacific ... youthonline . [Accessed 05/25/2016] HEALTH IMPACT OF OBESITY More than 80 percent of people with type ...

  6. Bartolome Island, Galapagos Stable Oxygen Calibration Data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Galapagos Coral Stable Oxygen Calibration Data. Sites: Bartolome Island: 0 deg, 17'S, 90 deg 33' W. Champion Island: 1 deg, 15'S, 90 deg, 05' W. Urvina Bay (Isabela...

  7. Asian & Pacific Islander American Health Forum

    Science.gov (United States)

    ... to main content Asian & Pacific Islander American Health Forum HOME TAKE ACTION CONTACT US DONATE Facebook Twitter ... latest APIAHF updates Asian & Pacific Islander American Health Forum. All rights reserved. One Kaiser Plaza, Suite #850, ...

  8. Bandgap engineering of GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Bang-Ming; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Computational Science Research Center, Beijing, 100094 (China); Yam, Chi-Yung, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [Beijing Computational Science Research Center, Beijing, 100094 (China); Xu, Li-Chun [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Lau, Woon-Ming [Beijing Computational Science Research Center, Beijing, 100094 (China); Chengdu Green Energy and Green Manufacturing Technology R& D Center, Chengdu, Sichuan, 610207 (China)

    2016-05-15

    Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

  9. Gallium incorporation kinetics during GSMBE of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Jones, C.R.; Kaspi, R. [Wright State Univ. Research Center, Dayton, OH (United States); Lei, T.; Evans, K.R. [Wright Lab., Wright-Patterson AFB, OH (United States). Solid State Electronics Directorate

    1996-11-01

    The kinetics of Ga incorporation during gas-source molecular beam epitaxy of GaN are investigated for varying substrate temperature and incident ammonia flux. Incident Ga atoms eventually either: (1) react with NH{sub 3} to form GaN; (2) accumulate on the film surface, or (3) desorb. Low substrate temperatures lead to significant Ga surface accumulation due to the temperature-dependent reactivity of NH{sub 3} towards Ga. High substrate temperatures give rise to significant Ga desorption. Increasing NH{sub 3} flux retards both Ga surface accumulation and Ga desorption. The GaN formation rate variation with substrate temperature peaks near 750 C and increases with NH{sub 3} flux. The observation of two distinct and very low activation energies for Ga desorption suggests a relatively complex surface chemistry and a strong likelihood that hydrogen is playing an important role.

  10. Energy Transition Initiative: Island Energy Snapshot - U.S. Virgin Islands (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2015-03-01

    This profile provides a snapshot of the energy landscape of the U.S. Virgin Islands (USVI) - St. Thomas, St. John, and St. Croix. The Virgin Islands archipelago makes up the northern portion of the Lesser Antilles and the western island group of the Leeward Islands, forming the border between the Atlantic Ocean and the Caribbean Sea.

  11. Seabirds of Easter Island, Salas y Gómez Island and Desventuradas Islands, southeastern Pacific Ocean

    Directory of Open Access Journals (Sweden)

    Marcelo A Flores

    2014-10-01

    Full Text Available We reviewed available information on seabirds inhabiting Easter Island, Salas y Gómez Island and Desventuradas Islands and their adjacent waters through an analysis of published and grey literature. Results obtained indicate that a total of 37 species are present in the study area and that, among the orders represented, the Procellariiformes and Charadriiformes are the dominant taxa (29 species. Moreover, the family Procellariidae is represented by 13 species and Laridae by 7 species. There has been an increase in new records over the past six years but no systematic studies have been developed. The need for further research that focuses on ecological aspects and anthropogenic impacts is critical in order to develop adequate conservation strategies.

  12. Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures

    CERN Document Server

    Giazotto, F; Beltram, F; Lazzarino, M; Orani, D; Rubini, S; Franciosi, A

    2002-01-01

    Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs is presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in \\emph{all}-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

  13. Stone anchors from Minicoy Island, Lakshadweep, India

    Digital Repository Service at National Institute of Oceanography (India)

    Tripati, S.

    Lakshadweep Islands lie on the sea route between South Asia, Far East and African countries. Being on the trade route, boats and ships used the islands of Lakshadweep as a stopover to take on fresh water. Lakshadweep Islands played an important role...

  14. The Limacidae of the Canary Islands

    NARCIS (Netherlands)

    Regteren Altena, van C.O.

    1950-01-01

    CONTENTS Introduction............... 3 Systematic survey of the Limacidae of the central and western Canary Islands 5 Biogeographical notes on the Limacidae of the Canary Islands . . . . 21 Alphabetical list of the persons who collected or observed Limacidae in the Canary Islands.............. 31 Li

  15. Stepping-stones to the Edge: Artistic Expressions of Islandness in an Ocean of Islands

    Directory of Open Access Journals (Sweden)

    Laurie Brinklow

    2013-05-01

    Full Text Available Since the earliest of times, islands have captured the artistic imagination—and, often, for the artist who finds his or her muse in being ‘islanded’, the smaller the island the better. Archipelagos offer an ideal setting for artists who take their inspiration from place: on small islands off islands they can experience an intensity of island living they might not otherwise have on a main island: boundedness and connection, isolation and community. This paper examines expressions of islandness by artists who live on islands off islands that are poles apart—‘archipelagos’ of the Canadian North Atlantic and the Great Southern Ocean. It draws upon interviews with those artists and writers to consider the nature of humans’ attachment and attraction to islands, exploring through the lens of phenomenology what Stratford et al. call the “entanglement between and among islands”.

  16. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    Institute of Scientific and Technical Information of China (English)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer,which leads to a higher potential barrier at the backside of the twodimensional electron gas channel and better carrier confinement.This,remarkably,reduces the drain leakage current and improves the device breakdown voltage.The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (~ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (~50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate-drain distance of 1μm.The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm,a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.

  17. High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN

    Energy Technology Data Exchange (ETDEWEB)

    Siekacz, M.; Nowak, G.; Porowski, S. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); Dybko, K. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Skierbiszewski, C. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); TopGaN Ltd., Warsaw (Poland); Knap, W. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); GES -UMR, CNRS - Universite Montpellier 2, Place E. Bataillon, 34950 Montpellier (France); Wasilewski, Z. [Institute for Microstructural Sciences, National Research Council, Ottawa (Canada); Maude, D. [Grenoble High Magnetic Field Laboratory, MPI-CNRS, 38042 Grenoble (France); Lusakowski, J. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland); Krupczynski, W.; Bockowski, M. [TopGaN Ltd., Warsaw (Poland)

    2005-03-01

    We present transport properties of AlGaN/GaN heterostructures grown over high-pressure bulk GaN substrates. The experimental results include the conductivity tensor measurements in a magnetic field up to 23 T in a wide temperature range 2 K-300 K for Hall bar samples. The room temperature high field data allow us to clearly separate contributions of a parasitic parallel conduction from 2DEG conduction in all investigated heterostructures. The room temperature mobility limit for 2D electrons in GaN/AlGaN heterojunctions grown on defect free GaN bulk substrates is around 2400 cm{sup 2}/Vs. The Quantum Hall Effect studies are performed in the magnetic fields up to 23 T and temperatures between 1.6 K and 15 K This high magnetic field in combination with very high mobility (over 60000 cm{sup 2}/Vs) in the sample grown on the bulk GaN substrate allow us to determine the activation energy in cyclotron gap from longitudinal magnetoresistance. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  19. Palaeotsunamis in the Pacific Islands

    Science.gov (United States)

    Goff, J.; Chague-Goff, C.; Dominey-Howes, D.; McAdoo, B.; Cronin, S.; Bonte-Grapetin, Michael; Nichol, S.; Horrocks, M.; Cisternas, M.; Lamarche, G.; Pelletier, B.; Jaffe, B.; Dudley, W.

    2011-01-01

    The recent 29 September 2009 South Pacific and 27 February 2010 Chilean events are a graphic reminder that the tsunami hazard and risk for the Pacific Ocean region should not be forgotten. Pacific Islands Countries (PICs) generally have short (Elsevier B.V.

  20. Extinction debt on oceanic islands

    DEFF Research Database (Denmark)

    Triantis, K.A.; Borges, Paulo A. V.; Ladle, R.J.;

    2010-01-01

    the magnitude of such future extinction events has been hampered by potentially inaccurate assumptions about the slope of species-area relationships, which are habitat- and taxon-specific. We overcome this challenge by applying a method that uses the historical sequence of deforestation in the Azorean Islands...

  1. 1946 Unimak Island, USA Images

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — On April 1, 1946, at 12:29 [local time] a rather strong magnitude 7.4 earthquake occurred with source to the south of Unimak Island, causing one of the most...

  2. Rhode Island's Forest Resources, 2006

    Science.gov (United States)

    Brett J. Butler; I. Ted Goodnight; Barbara O' Connell; Bruce Payton; Bryan Tirrell

    2008-01-01

    Table 1 and Figures 2 and 3 have been revised by the authors and these revisions were incorporated into the publication on May 27, 2008. This publication provides an overview of forest resource attributes for Rhode Island based on an annual inventory conducted by the Forest Inventory and Analysis program at the Northern Research Station of the U.S. Forest Service....

  3. Date with the Green Island

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ Qingdao,also spelled Tsingtao,iS one of the most beautiful and clean cities in China and with a population of around 2.5 million(7 million regional)is the largest city after Jinan(the capital)in Shandong Province.The name"Qingdao"means "The Green Island".

  4. On a Crowded Desert Island.

    Science.gov (United States)

    Rothstein, Samuel

    1989-01-01

    Suggests reference sources most appropriate for a desert island. In addition to "Robinson Crusoe" (Daniel Defoe) and a reference guide to the literature of travel, the list includes basic books on reference work, guides to reference sources, journals, an almanac, encyclopedias, a guide to English usage, and a book of quotations. (14 references)…

  5. Chaos in easter island ecology.

    Science.gov (United States)

    Sprott, J C

    2011-10-01

    This paper demonstrates that a recently proposed dynamical model for the ecology of Easter Island admits periodic and chaotic attractors, not previously reported. Such behavior may more realistically depict the population dynamics of general ecosystems and illustrates the power of simple models to produce the kind of complex behavior that is ubiquitous in such systems.

  6. On a Crowded Desert Island.

    Science.gov (United States)

    Rothstein, Samuel

    1989-01-01

    Suggests reference sources most appropriate for a desert island. In addition to "Robinson Crusoe" (Daniel Defoe) and a reference guide to the literature of travel, the list includes basic books on reference work, guides to reference sources, journals, an almanac, encyclopedias, a guide to English usage, and a book of quotations. (14 references)…

  7. 46 CFR 7.70 - Folly Island, SC to Hilton Head Island, SC.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 1 2010-10-01 2010-10-01 false Folly Island, SC to Hilton Head Island, SC. 7.70 Section... BOUNDARY LINES Atlantic Coast § 7.70 Folly Island, SC to Hilton Head Island, SC. (a) A line drawn from the southernmost extremity of Folly Island to latitude 32°35′ N. longitude 79°58.2′ W. (Stono Inlet Lighted...

  8. Description of the atmospheric circulation in the boundary layer over a tropical island: Case study of Guadeloupe Archipelago

    Science.gov (United States)

    Plocoste, Thomas; Dorville, Jean-François; Jacoby-Koaly, Sandra; Roussas, André

    2016-04-01

    Over past two decades the use of atmospheric sounding methods as Sodars, Lidar equipped drones increased sharply. Compare to weather balloon, these modern methods allow measure of profile at constant heights during long period. There are few studies using this type of equipment in tropical climates and lesser on small island. Wind regime on island of diameter less than 50 km are mostly considered as oceanic. Many author consider that thermal effect are negligible in land. But recent observations and simulations show importance of the thermal circulation at small- and meso- scales particularly in atmospheric pollution process. Up to 2009 no wind profile data were available continuously to study atmospheric circulation in Guadeloupe Archipelago (GA) which is one of the islands of the Lesser Antilles Arc. In first approximation wind was evaluated based on measures done at the most upwind island of the GA for many application as wind power and atmospheric pollution. From 2009 to 2012 a measurement campaign of the Atmospheric Boundary Layer (ABL) have been performed by the University of Antilles (UA) in GA. To assess effects of dynamic of ABL on air quality in sub urban area, particularly during the sunset and sunrise, UA monitored two sites with a weather station and a doppler sodar (REMTECH PAO). Both sites are close to the sea with one in a coastal area and the other in an open landfill surrounded by densely populated building and a mangrove swamp. Thermal and chemical measurements with a portable mass spectrometer were made in the vicinity of the landfill and showed the existence of urban heat islands. This study presents the first Doppler Sodar long measurements campaign in GA. Statistical analysis of the three year of doppler sodar data (i.e. wind components and its fluctuations) allow to identified and characterized the complex circulations on the two sites in the ABL between 25 and 500m above the sea level. Orographic and thermal effects due to urban area were

  9. Dilute GaAsN and GaInAsN grown by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Milanova, M; Koleva, G; Kakanakov, R [Central Laboratory of Applied Physics, Bulgarian Academy of Sciences, 59 St. Petersburg Blvd, 4000 Plovdiv (Bulgaria); Vitanov, P K; Alexieva, Z; Goranova, E A [Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Arnaudov, B; Evtimova, S [Faculty of Physics, St. Kl. Ohridski University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia (Bulgaria); Barthou, C; Clerjaud, B, E-mail: vitanov@phys.bas.b [Universite Pierre et Marie Curie, Institut des NanoSciences de Paris, rue de Lourmel 140, 75015 Paris (France)

    2010-04-01

    Dilute III-nitrides, such as GaAsN and GaInAsN, are of considerable current interest both from a fundamental point of view and for applications in solar cells, GaAs-based long-wavelength photodetectors and diode lasers. The addition of nitrogen leads to material properties that deviate strongly from those expected for conventional III-V solid solutions. The possibility was investigated to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures. The structures were grown from Ga- and Ga-In- melts containing powder GaN as a nitrogen source. The initial growth temperature was varied in the range 560{sup 0}C - 660{sup 0}C. The low temperature growth favors nitrogen incorporation in the epilayers. The optical transmission and photoluminescence spectra of a set of structures grown at different temperatures were studied showing ternary and quaternary dilute nitride solid solutions with nitrogen content about 0.2 at.%. The photoluminescence spectra show emission from localized nitrogen states as well.

  10. Dilute GaAsN and GaInAsN grown by liquid phase epitaxy

    Science.gov (United States)

    Milanova, M.; Koleva, G.; Kakanakov, R.; Vitanov, P. K.; Alexieva, Z.; Goranova, E. A.; Arnaudov, B.; Evtimova, S.; Barthou, C.; Clerjaud, B.

    2010-04-01

    Dilute III-nitrides, such as GaAsN and GaInAsN, are of considerable current interest both from a fundamental point of view and for applications in solar cells, GaAs-based long-wavelength photodetectors and diode lasers. The addition of nitrogen leads to material properties that deviate strongly from those expected for conventional III-V solid solutions. The possibility was investigated to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures. The structures were grown from Ga- and Ga-In- melts containing powder GaN as a nitrogen source. The initial growth temperature was varied in the range 560°C - 660°C. The low temperature growth favors nitrogen incorporation in the epilayers. The optical transmission and photoluminescence spectra of a set of structures grown at different temperatures were studied showing ternary and quaternary dilute nitride solid solutions with nitrogen content about 0.2 at.%. The photoluminescence spectra show emission from localized nitrogen states as well.

  11. Time-Resolved Photoluminescence Studies of InGaN/AlGaN Multiple Quantum Wells

    Science.gov (United States)

    Zeng, K. C.; Smith, M.; Lin, J. Y.; Jiang, H. X.; Robert, J. C.; Piner, E. L.; McIntosh, F. G.; Bahbahani, M.; Bedair, S. M.; Zavada, J.

    1997-03-01

    Picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the dynamic processes of optical transitions in InGaN/AlGaN multiple quantum wells (MQW) grown by metal-organic chemical vapor deposition (MOCVD). The dynamical behavior of the PL emission reveals that the main emission line in these MQW is the combination of the localized exciton and a band-to-impurity emission lines. The spectral lineshape and the recombination dynamics of the localized exciton and of the band-to-impurity transitions have been systematically investigated at different temperatures and excitation intensities and for MQW with different structures and growth conditions. From these studies, important parameters, including the localization energy and the recombination lifetimes of the localized excitons in InGaN/AlGaN quantum wells, the well width fluctuation, alloy compositions in the well and the barrier materials, and the band offset between InGaN and AlGaN can be deduced. Comparing with time-resolved PL results of InGaN/GaN and GaN/AlGaN MQW, important effects of interface on the optical properties of the III-nitride MQW have been evaluated. Implications of our results to device applications will be discussed.

  12. Strain gauges of GaSbFeGa{sub 1.3} eutectic composites

    Energy Technology Data Exchange (ETDEWEB)

    Aliyev, M.I.; Khalilova, A.A.; Arasly, D.H.; Rahimov, R.N. [National Academy of Sciences, Institute of Physics of Azerbaijan, Baku (Azerbaijan); Tanoglu, M. [Izmir Institute of Technology, Department of Mechanical Engineering, Izmir (Turkey); Ozyuzer, L. [Izmir Institute of Technology, Department of Physics, Izmir (Turkey)

    2004-12-01

    A needle-shaped metallic FeGa{sub 1.3} phase oriented in a specific direction and uniformly distributed within a GaSb matrix was grown by a vertical Bridgman method. Strain-gauge characteristics, such as strain-sensitivity coefficient (S), temperature coefficient of strain sensitivity (TCS) and temperature coefficient of resistance, of GaSb and GaSbFeGa{sub 1.3} eutectic alloy have been investigated in the range of 200 to 400 K under deformation up to strains of 1.3 x 10{sup -3}. The value of S of the GaSbFeGa{sub 1.3} composition is measured to be 40{+-}5 and its TCS is about 0.2% deg{sup -1} when the current is perpendicular to the needles and the needles are parallel to the plane of the gauge substrate. The strain-sensitivity characteristics are linear and hysteresis free in the investigated temperature range in the aforementioned direction. It was found that GaSbFeGa{sub 1.3}-based strain gauges possess better deformation characteristics than GaSb-based gauges. (orig.)

  13. Returning from the Horizon: Introducing Urban Island Studies

    Directory of Open Access Journals (Sweden)

    Xavier Barceló Pinya

    2015-12-01

    Full Text Available Island studies tends to focus on peripheral, isolated, and marginal aspects of island communities, while urban studies has showed scant awareness of islandness: Although many people research cities on islands, there is little tradition of researching island cities or urban archipelagos per se. Island cities (densely populated small islands and population centres of larger islands and archipelagos nevertheless play import cultural, economic, political, and environmental roles on local, regional, and global scales. Many major cities and ports have developed on small islands, and even villages can fulfil important urban functions on lightly populated islands. Island concepts are also deployed to metaphorically describe developments in urban space. The journal Urban Island Studies explores island and urban processes around the world, taking an island approach to urban research and an urban approach to island research.

  14. Secondary recrystallization behavior in the rolled columnar-grained Fe–Ga alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Chao; Li, Jiheng; Zhang, Wenlan; Bao, Xiaoqian; Gao, Xuexu, E-mail: gaox@skl.ustb.edu.cn

    2015-10-01

    The secondary recrystallization behavior with temperature increasing from 900 to 1080 °C was investigated in the rolled columnar-grained magnetostrictive Fe–Ga alloy sheets. The abnormal Goss grain growth occurred due to the inhibitory action of NbC in the Fe–Ga–0.1 at%NbC sheets. With the temperature increasing at a rate of 0.25 °C/min, the secondary recrystallization started below 950 °C. In addition to the S-induced surface energy effect, sulfur annealing also introduced a large number of S-rich and Nb-rich precipitates, which retarded the grain boundary migration on the surface. The abnormal grain growth was found to be restricted inside the sheet during the sulfur annealing process when the temperature was below 1000 °C, and a large amount of small island-like grains was remained on S-annealed sheets. After final Ar/H{sub 2} annealing processes, the S-rich precipitates and small island-like grains were eliminated, and sharp Goss orientation and high magnetostriction of 245 ppm were obtained in the final S-annealed sheets. - Highlights: • Secondary recrystallization started below 1000 °C in rolled Fe–Ga sheets. • Inhibition effect was introduced on the surfaces by sulfur annealing. • Abnormal Goss grains develop inside the sheets during sulfur annealing.

  15. Low Turn-on Voltage of InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor%低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管

    Institute of Scientific and Technical Information of China (English)

    郑丽萍; 严北平; 孙海锋; 刘新宇; 和致经; 吴德馨

    2003-01-01

    采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPN InGaP/GaAsSb/GaAs双异质结晶体管(double heterojunction bipolar transistor,DHBT).器件性能如下:BE结的正向开启电压(turn-on voltage)仅为0.73V;当IB=1μA/step时,直流增益达到了100,BVCEO=5~6V.通过对基区不同Sb含量器件的比较得到,器件的直流特性与基区Sb的含量有关.

  16. Meningiomas: a comparative study of 68Ga-DOTATOC, 68Ga-DOTANOC and 68Ga-DOTATATE for molecular imaging in mice.

    Directory of Open Access Journals (Sweden)

    María Luisa Soto-Montenegro

    Full Text Available PURPOSE: The goal of this study was to compare the tumor uptake kinetics and diagnostic value of three (68Ga-DOTA-labeled somatostatin analogues ((68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE using PET/CT in a murine model with subcutaneous meningioma xenografts. METHODS: The experiment was performed with 16 male NUDE NU/NU mice bearing xenografts of a human meningioma cell line (CH-157MN. (68Ga-DOTATOC, (68Ga-DOTANOC, and (68Ga-DOTATATE were produced in a FASTLab automated platform. Imaging was performed on an Argus small-animal PET/CT scanner. The SUVmax of the liver and muscle, and the tumor-to-liver (T/L and tumor-to-muscle (T/M SUV ratios were computed. Kinetic analysis was performed using Logan graphical analysis for a two-tissue reversible compartmental model, and the volume of distribution (Vt was determined. RESULTS: Hepatic SUVmax and Vt were significantly higher with (68Ga-DOTANOC than with (68Ga-DOTATOC and (68Ga-DOTATATE. No significant differences between tracers were found for SUVmax in tumor or muscle. No differences were found in the T/L SUV ratio between (68Ga-DOTATATE and (68Ga-DOTATOC, both of which had a higher fraction than (68Ga-DOTANOC. The T/M SUV ratio was significantly higher with (68Ga-DOTATATE than with (68Ga-DOTATOC and (68Ga-DOTANOC. The Vt for tumor was higher with (68Ga-DOTATATE than with (68Ga-DOTANOC and relatively similar to that of (68Ga-DOTATOC. CONCLUSIONS: This study demonstrates, for the first time, the ability of the three radiolabeled somatostatin analogues tested to image a human meningioma cell line. Although Vt was relatively similar with (68Ga-DOTATATE and (68Ga-DOTATOC, uptake was higher with (68Ga-DOTATATE in the tumor than with (68Ga-DOTANOC and (68Ga-DOTATOC, suggesting a higher diagnostic value of (68Ga-DOTATATE for detecting meningiomas.

  17. GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Ristic, J.; Calleja, E.; Fernandez-Garrido, S. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s n, 28040 Madrid (Spain); Trampert, A.; Jahn, U.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Povoloskyi, M.; Carlo, A. Di [Dept. di Ingegneria Elettronica, Universita di Roma ' ' Tor Vegata' ' , 00133 Roma (Italy)

    2005-02-01

    The successful growth of AlGaN nanocolumns by plasma assisted MBE, with different Al compositions, opened the way for achieving nano-heterostructures including GaN Quantum Discs (QDss). The luminescence emission from the QDss embedded in the AlGaN nanocolumns was tuned by changing their thickness and/or the Al composition of the barriers. Such a nano-heterostructure was then enclosed between two AlN/GaN Distributed Bragg Reflectors (DBR), with nominal reflectivities of 90 and 50%. The choice of the AlN/GaN bilayers for the DBRs allowed to reach these reflectivity values with a significantly lower number of periods, as compared to the AlGaN/GaN stacks. The resulting nanocavity has been characterized by cathodoluminescence (CL), and Scanning and Transmission Electron Microscopy (SEM, TEM). CL measurements show that the emission from the nanocavity is quite close to the targeted value. TEM data points to the need of optimized conditions to grow AlN columnar layers in order to avoid the lateral overgrowth in the columnar nanostructure. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Challenges, advances and perspectives in island biogeography

    Directory of Open Access Journals (Sweden)

    Paulo A.V. Borges

    2016-07-01

    Full Text Available Island biogeographical research is becoming more and more fashionable, with the continuous identification of new challenges that are critical for the advancement of science. In this contribution we identify biases and limitations associated with island biogeographical studies, and also describe recent advances and propose new perspectives. The main proposals include: 1 downscaling island biogeographical studies to local/plot scale; 2 investigating geographical patterns of intra-specific genetic variation to infer dispersal processes among and within islands; 3 using applied biogeographical research to respond to the current island biodiversity crisis; and 4 applying new computer-intensive methods such as artificial intelligence (AI approaches.

  19. Growth of self-assembled (Ga)InAs/GaAs quantum dots and realization of high quality microcavities for experiments in the field of strong exciton photon coupling; Selbstorganisiertes Wachstum von (Ga)InAs/GaAs-Quantenpunkten und Entwicklung von Mikroresonatoren hoechster Guete fuer Experimente zur starken Exziton-Photon-Kopplung

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, Andreas

    2008-11-05

    At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 {mu}m. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10{sup 9} cm{sup -2} and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 {mu}eV between the

  20. Accelerated aging of GaAs concentrator solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  1. Role of electronic correlations in Ga

    KAUST Repository

    Zhu, Zhiyong

    2011-06-13

    An extended around mean field (AMF) functional for less localized pelectrons is developed to quantify the influence of electronic correlations in α-Ga. Both the local density approximation (LDA) and generalized gradient approximation are known to mispredict the Ga positional parameters. The extended AMF functional together with an onsite Coulomb interaction of Ueff=1.1 eV, as obtained from constraint LDA calculations, reduces the deviations by about 20%. The symmetry lowering coming along with the electronic correlations turns out to be in line with the Ga phase diagram.

  2. Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guang-Chen; FENG Shi-Wei; HU Pei-Feng; ZHAO Yan; GUO Chun-Sheng; XU Yang; CHEN Tang-Sheng; JIANG Yi-Jian

    2011-01-01

    Channel temperature measurements of multi-finger AlGaN/GaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter (TSP) by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6℃/W. Compared with both the measured results by micro-Raman method and simulated results of a three-dimensional heat conduction model, the physical meaning of the channel temperature for AlGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.

  3. 60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

    Institute of Scientific and Technical Information of China (English)

    WANG Yan-Ping; LUO Yin-Hong; WANG Wei; ZHANG Ke-Ying; GUO Hong-Xia; GUO Xiao-Qiang; WANG Yuan-Ming

    2013-01-01

    The testing techniques and experimental methods of the 60Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established.The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically,and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out.The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated,and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.

  4. Characterization of Inx Ga1-x As-GaAs heterostructures via electron beam techniques

    Science.gov (United States)

    Gomez-Barojas, Estela; Silva-Gonzalez, Rutilo; Serrano-Rojas, Rosa Maria; Vidal-Borbolla, Miguel Angel

    2005-03-01

    In the case of strained superlattices abrupt heterointerfaces are required because compositional fluctuations at heterointerfaces results in uncertainty in both composition and lattice constant. The aim of this work is to study exsitu the surface morphology, the periodicity and elemental composition of a set of 3 InGaAs-GaAs heterostructures grown on GaAs (100) substrates by a molecular beam epitaxy system. The heterostructures are formed by 10 periods of InGaAs-GaAs epitaxially grown on GaAs substrates with nominal thickness of 500 and 1000 å, respectively. The techniques used for this purpose are the scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). The In content in the heterostructures is determined from corresponding Auger depth profiles. This work has been supported by VIEP-BUAP, Project No. II53G02.

  5. Tunability of InGaN/GaN quantum well light emitting diodes through current

    Science.gov (United States)

    Biswas, Dipankar; Panda, Siddhartha

    2013-07-01

    In the recent years, InGaN/GaN quantum well (QW) light emitting diodes (LEDs) have gathered much importance through the introduction of white LEDs and dual wavelength LEDs. However, the continuous tunability of InGaN/GaN QW LEDs has not been well addressed or discussed. In this paper, we introduce the tunability of an InGaN/GaN QW LED having a well width of 4 nm and In mole fraction of 0.3. The results, obtained from self-consistent solutions of the Schrödinger and Poisson equations, show that the transition energy of the LED may be continuously tuned by the device current. A prominent nonlinearity of the transition energy with the device current is generated, which should be of interest to the research workers in the field of optoelectronics.

  6. Growth and structural characterizations of GaSe and GaSe:Cd single crystals

    Science.gov (United States)

    Ashkhasi, Afsoun; Gürbulak, Bekir; Şata, Mehmet; Turgut, Güven; Duman, Songül

    2017-02-01

    GaSe and GaSe:Cd single crystals used in this research were grown by using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). The structure and lattice parameters of the undoped GaSe and GaSe:Cd semiconductors have been analyzed using a X-ray diffractometer (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that GaSe and GaSe:Cd crystals have hexagonal structure, quite close 2θ peak values. XRD measurements indicate that there is an increase in peak intensities at specific annealing temperatures (500°C). Cd doping causes a significant decrease in the XRD peak intensity.

  7. Investigation of the confinement potential within GaNAs/GaAs multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Goshima, Keishiro; Kittaka, Akinobu; Fujii, Kensuke; Shiraga, Masahiro; Tsurumachi, Noriaki; Nakanishi, Shunsuke; Koshiba, Shyun; Itoh, Hiroshi [Engineering, Kagawa University, 2217-20, Takamatsu, Kagawa 761-0396 (Japan); Akiyama, Hidefumi [Institute of Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)

    2011-02-15

    We conducted a detailed investigation of the potential structure within GaNAs/GaAs multiple quantum wells (MQWs) using three independent experimental techniques: the temperature dependence of Photo-luminescence (PL) spectroscopy, time-resolved PL spectroscopy, and degenerate four-wave mixing (DFWM) measurements. We observed a very long lifetime (T{sub 1} = 12 ns) and dephasing time (T{sub 2} = 130 ps) of excitons in the GaNAs/GaAs MQWs. We suggested that the GaNAs/GaAs MQWs have a strong and deep confinement structure that is comparable to that of quantum dots (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. An optically pumped GaN/AlGaN quantum well intersubband terahertz laser

    Science.gov (United States)

    Fu, Ai-Bing; Hao, Ming-Rui; Yang, Yao; Shen, Wen-Zhong; Liu, Hui-Chun

    2013-02-01

    We propose an optically pumped nonpolar GaN/AlGaN quantum well (QW) active region design for terahertz (THz) lasing in the wavelength range of 30 μm ~ 40 μm and operating at room temperature. The fast longitudinal optical (LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state, and more importantly, the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures. The influences of temperature and pump intensity on gain and electron densities are investigated. Based on our simulations, we predict that with a sufficiently high pump intensity, a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.

  9. N incorporation in GaInNSb alloys and lattice matching to GaSb

    Energy Technology Data Exchange (ETDEWEB)

    Ashwin, M. J.; Jones, T. S. [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Walker, D.; Thomas, P. A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Veal, T. D. [Stephenson Institute for Renewable Energy, School of Physical Sciences, University of Liverpool, Liverpool L69 4ZF (United Kingdom)

    2013-01-21

    The incorporation of N into MBE grown GaNSb and GaInNSb is investigated. Measurements of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate, followed by a departure from this at low growth rates; a similar behaviour is observed for GaInNSb. Unexpectedly, the point at which there is a departure from this linear behaviour is found to be extended to lower growth rates by the addition of small amounts of In. These results are compared to a kinetic theory-based model from which it is postulated that the change in behaviour can be attributed to an In-induced change in the characteristic surface residence lifetime of the N atoms. In addition, a method is demonstrated for growing GaInNSb lattice-matched to GaSb(001) for compositions with band gaps covering the 2-5 {mu}m region.

  10. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Science.gov (United States)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  11. Intraband Spectroscopy of GaSe Nanoparticles and InSe/GaSe Nanoparticle Heterojunctions

    Science.gov (United States)

    Kelley, David F.; Tu, Haohua; Chen, Xiang-Bai

    The spectroscopic and dynamical characteristics of electron and hole intraband transitions in several sizes of GaSe nanoparticles have been studied using polarized femtosecond transient absorption spectroscopy. Assignments of the observed absorptions are made in terms of the known GaSe band structure and a model in which the electron and hole states are described by particle-in-a-cylinder states. The results indicate that the transient absorption spectrum is due to a size-independent, z-polarized hole intraband transition, and in the smaller particles, an x,y-polarized electron transition. In InSe/GaSe mixed aggregates, direct electron transfer from InSe to GaSe nanoparticles occurs upon photoexcitation of a charge transfer band. An exciton on GaSe nanoparticles can undergo diffusion and charge separation the an InSe/GaSe heterojunction.

  12. Modeling and simulation of InGaN/GaN quantum dots solar cell

    Science.gov (United States)

    Aissat, A.; Benyettou, F.; Vilcot, J. P.

    2016-07-01

    Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In0.25Ga0.75N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In0.25Ga0.75N/GaN quantum dots with pin solar cell. The conversion efficiency begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.

  13. Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice

    Science.gov (United States)

    Jin, Chuan; Xu, Qingqing; Yu, Chengzhang; Chen, Jianxin

    2016-05-01

    In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39". Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.

  14. Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure

    Science.gov (United States)

    Ashkenasy, N.; Leibovitch, M.; Shapira, Yoram; Pollak, Fred H.; Burnham, G. T.; Wang, X.

    1998-01-01

    An InGaAs/GaAs/AlGaAs single quantum well graded-index-of-refraction separate-confinement hetero-structure laser has been analyzed using surface photovoltage spectroscopy (SPS) in a contactless, nondestructive way at room temperature. Numerical simulation of the resulting spectrum made it possible to extract growth parameters, such as the InGaAs well width, the well and cladding compositions, as well as important electro-optic structure data of this device, including the lasing wavelength and built-in electric field. The results highlight the power of SPS in obtaining performance parameters of actual laser devices, containing two-dimensional structures, in a contactless, nondestructive way.

  15. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    Energy Technology Data Exchange (ETDEWEB)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  16. Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters

    Directory of Open Access Journals (Sweden)

    M. D. Yang

    2009-01-01

    Full Text Available We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells.

  17. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

    Science.gov (United States)

    Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

    2014-07-01

    Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an ``ordinary'' 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al0.25Ga0.75N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ~24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (~0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ~0.6 to ~1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (~1.3 × 1013 cm-2). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect transistor concepts

  18. 68Ga-triacetylfusarinine C and 68Ga-ferrioxamine E for Aspergillus infection imaging: uptake specificity in various microorganisms

    NARCIS (Netherlands)

    Petrik, M.; Haas, H. de; Laverman, P.; Schrettl, M.; Franssen, G.M.; Blatzer, M.; Decristoforo, C.

    2014-01-01

    (68)Ga-triacetylfusarinine C ((68)Ga-TAFC) and (68)Ga-ferrioxamine E ((68)Ga-FOXE) showed excellent targeting properties in Aspergillus fumigatus rat infection model. Here, we report on the comparison of specificity towards different microorganisms and human lung cancer cells (H1299).The in vitro up

  19. Growth of InGaN and double heterojunction structure with InGaN back barrier

    Energy Technology Data Exchange (ETDEWEB)

    Shi Linyu; Zhang Jincheng; Wang Hao; Xue Junshuai; Ou Xinxiu; Fu Xiaofan; Chen Ke; Hao Yue, E-mail: sly_yolanda@163.com [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-12-15

    We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition (MOCVD). It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction. A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature. Due to the InGaN layer polarization field opposite to that in the AlGaN layer, an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices. The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6 {mu}A/mm at V{sub DS} = 10 V. (semiconductor materials)

  20. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.;

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  1. Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

    KAUST Repository

    Ng, Tien Khee

    2014-01-01

    The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ~830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

  2. SEMICONDUCTOR MATERIALS Growth of InGaN and double heterojunction structure with InGaN back barrier

    Science.gov (United States)

    Linyu, Shi; Jincheng, Zhang; Hao, Wang; Junshuai, Xue; Xinxiu, Ou; Xiaofan, Fu; Ke, Chen; Yue, Hao

    2010-12-01

    We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition (MOCVD). It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction. A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature. Due to the InGaN layer polarization field opposite to that in the AlGaN layer, an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices. The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6 μA/mm at VDS = 10 V.

  3. Modeling Study for Tangier Island Jetties, Tangier Island, Virginia

    Science.gov (United States)

    2015-03-01

    Bay and propagate waves into the entrance channel and boat canal . The numerical modeling results indicated that maximum wave energy re- duction inside...fishing fleet, the U.S. Army Engineer District, Norfolk (CENAO) maintains the Tangier Island boat canal . CENAO is considering the construction of...primary goal of the study was to develop a quantitative esti- mate of waves and wave reduction in the canal for a relative comparison of alternatives

  4. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  5. Theoretical study of gallium nitride molecules, GaN2 and GaN4.

    Science.gov (United States)

    Tzeli, Demeter; Theodorakopoulos, Giannoula; Petsalakis, Ioannis D

    2008-09-18

    The electronic and geometric structures of gallium dinitride GaN 2, and gallium tetranitride molecules, GaN 4, were systematically studied by employing density functional theory and perturbation theory (MP2, MP4) in conjunction with the aug-cc-pVTZ basis set. In addition, for the ground-state of GaN 4( (2)B 1) a density functional theory study was carried out combining different functionals with different basis sets. A total of 7 minima have been identified for GaN 2, while 37 structures were identified for GaN 4 corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces and bonding mechanisms for some low-lying electronic states of GaN 4. The dissociation energy of the ground-state GaN 2 ( X (2)Pi) is 1.1 kcal/mol with respect to Ga( (2)P) + N 2( X (1)Sigma g (+)). The ground-state and the first two excited minima of GaN 4 are of (2)B 1( C 2 v ), (2)A 1( C 2 v , five member ring), and (4)Sigma g (-)( D infinityh ) symmetry, respectively. The dissociation energy ( D e) of the ground-state of GaN 4, X (2)B 1, with respect to Ga( (2)P) + 2 N 2( X (1)Sigma g (+)), is 2.4 kcal/mol, whereas the D e of (4)Sigma g (-) with respect to Ga( (4)P) + 2 N 2( X (1)Sigma g (+)) is 17.6 kcal/mol.

  6. Self-assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces

    Directory of Open Access Journals (Sweden)

    Unnikrishnan NV

    2010-01-01

    Full Text Available Abstract Atomic Force Microscopy complemented by Photoluminescence and Reflection High Energy Electron Diffraction has been used to study self-assembly of silver nanoparticles and multiwall carbon nanotubes on thermally decomposed GaAs (100 surfaces. It has been shown that the decomposition leads to the formation of arsenic plate-like structures. Multiwall carbon nanotubes spin coated on the decomposed surfaces were mostly found to occupy the depressions between the plates and formed boundaries. While direct casting of silver nanoparticles is found to induce microdroplets. Annealing at 300°C was observed to contract the microdroplets into combined structures consisting of silver spots surrounded by silver rings. Moreover, casting of colloidal suspension consists of multiwall carbon nanotubes and silver nanoparticles is observed to cause the formation of 2D compact islands. Depending on the multiwall carbon nanotubes diameter, GaAs/multiwall carbon nanotubes/silver system exhibited photoluminescence with varying strength. Such assembly provides a possible bottom up facile way of roughness controlled fabrication of plasmonic systems on GaAs surfaces.

  7. Epitaxial growth of aligned GaN nanowires and nanobridges

    OpenAIRE

    2007-01-01

    Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the 〈100〉 direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowir...

  8. Inverter Anti-Islanding with Advanced Grid Support in Single- and Multi-Inverter Islands

    Energy Technology Data Exchange (ETDEWEB)

    Hoke, Andy

    2016-08-16

    As PV and other DER systems are connected to the grid at increased penetration levels, island detection may become more challenging for two reasons: 1. In islands containing many DERs, active inverter-based anti-islanding methods may have more difficulty detecting islands because each individual inverter's efforts to detect the island may be interfered with by the other inverters in the island. 2. The increasing numbers of DERs are leading to new requirements that DERs ride through grid disturbances and even actively try to regulate grid voltage and frequency back towards nominal operating conditions. These new grid support requirements may directly or indirectly interfere with anti-islanding controls. This report describes a series of tests designed to examine the impacts of both grid support functions and multi-inverter islands on anti-islanding effectiveness.

  9. Performance of AlGaN/GaN High Electron Mobility Transistors with AlSiN Passivation

    Science.gov (United States)

    2010-03-04

    NOTES 20100402017 14. ABSTRACT This program was focused on the development of alternative and superior dielectric passivations to AlGaN/ GaN HEMT ...efficiency were demonstrated. Index Terms GaN , MODFETs, Microwave power FETs, passivation. I. INTRODUCTION THE AlGaN/ GaN HEMT has been studied for its...deposition (LPCVD) system onto etched mesa-isolated AlGaN/ GaN HEMT structures with 25 nm Alo.25Gao.75N barriers grown on S.I. SiC. Dielectric

  10. Fast and ultrafast processes in AlGaN/GaN channels

    Energy Technology Data Exchange (ETDEWEB)

    Matulionis, A.; Liberis, J.; Ardaravicius, L.; Ramonas, M.; Zubkute, T.; Matulioniene, I. [Semiconductor Physics Institute, A. Goitauto 11, Vilnius 2600 (Lithuania); Eastman, L.F.; Shealy, J.R. [Cornell University, 425 Phillips Hall, Ithaca, NY 14853 (United States); Smart, J. [RF Micro Devices, 10420 Harris Oaks Blvd., Charlotte, NC 28269 (United States); Pavlidis, D.; Hubbard, S. [University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109-2122 (United States)

    2002-12-01

    Extrapolated experimental dependence of electron energy relaxation time is used to treat hot-electron sharing by the adjacent Al{sub 0.15}Ga{sub 0.85}N and GaN layers in Al{sub 0.15}Ga{sub 0.85}N/GaN. The results fit the available experimental data on microwave noise when hot-phonon effect on the energy relaxation time is taken into account. The relaxation time of the occupancy fluctuations of the shared states is estimated to be 6 ps at 80 K lattice temperature. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  11. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L. [School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom); Charlton, T. R.; Kinane, C. J.; Langridge, S. [ISIS, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Science and Technology Facilities Council, Oxon OX11 0QX (United Kingdom)

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  12. Energy characteristics of excitons in InGaN/GaN heterostructures

    Science.gov (United States)

    Usov, S. O.; Tsatsul'nikov, A. F.; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Sinitsyn, M. A.; Ledentsov, N. N.

    2008-04-01

    The structure and optical properties of the heterostructures, which contain an ultra-thin InGaN layers with GaN or AlGaN barriers, grown by MOCVD method were investigated by photoluminescence and high resolution X-ray diffraction (HRXRD) tehnigue. The exciton localization energy, Urbah energy and charge carries activation energies were obtained from analysis of the temperature dependences of the photoluminescence spectra for the In-rich areas (QDs). In these structures the In-rich areas are shown to appear in ultrathin InGaN layers due to phase decomposition. That leads to exciton and carrier localization in fluctuation minima, which prevents them from tranport to nonradiative recombination centres. The indium composition in the InGaN QDs were obtained using theoretical model, which describes the electron transition energy as a function of In-rich areas parameters. The parameters such as deformation of InGaN/GaN region and layer thickness were determined from HRXRD. The suggested approach is supposed to be effective method for analysis of the optical properties of InGaN/GaN heterostructures.

  13. Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys

    Science.gov (United States)

    Maltsev, Dmitry S.; Volkovich, Vladimir A.; Yamshchikov, Leonid F.; Chukin, Andrey V.

    2016-09-01

    Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys were studied. Temperature dependences of gadolinium activity in the studied alloys were determined at 573-1073 K employing the EMF method. Solubility of gadolinium in the Ga-Sn and Ga-Zn alloys was measured at 462-1073 K using IMCs sedimentation method. Activity coefficients as well as partial and excess thermodynamic functions of gadolinium in the studied alloys were calculated on the basis of the obtained experimental data.

  14. Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kauko, H.; Helvoort, A. T. J. van [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Zheng, C. L.; Glanvill, S. [Monash Centre for Electron Microscopy, Monash University, VIC 3800 (Australia); Zhu, Y.; Etheridge, J., E-mail: joanne.etheridge@monash.edu [Monash Centre for Electron Microscopy, Monash University, VIC 3800 (Australia); Department of Materials Engineering, Monash University, VIC 3800 (Australia); Dwyer, C. [Monash Centre for Electron Microscopy, Monash University, VIC 3800 (Australia); Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich (Germany); Munshi, A. M.; Fimland, B. O. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim (Norway)

    2013-12-02

    We demonstrate a method for compositional mapping of Al{sub x}Ga{sub 1–x}As heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

  15. GaN/AlGaN microcavities for enhancement of non linear optical effects

    CERN Document Server

    Tasco, V; Campa, A; Massaro, A; Stomeo, T; Epifani, G; Passaseo, A; Braccini, M; Larciprete, M C; Sibilia, C; Bovino, F A

    2011-01-01

    We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN due to the non centrosymmetric crystalline structure of this material. It consists of a GaN cavity embedded between two GaN/AlGaN Distributed Bragg Reflectors designed for a reference mode coincident with a second harmonic field generated in the near UV region (~ 400 nm). Critical issues for this target are the crystalline quality of the material, together with sharp and abrupt interfaces among the multi-stacked layers. A detailed investigation on the growth evolution of GaN and AlGaN epilayers in such a configuration is reported, with the aim to obtain high quality factor in the desiderated spectral range. Non linear second harmonic generation experiments have been performed and the results were compared with bulk GaN sample, highlighting the effect of the microcavity on the...

  16. Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

    DEFF Research Database (Denmark)

    Boulanger, J. P.; Chia, A. C. E.; Wood, B.

    2016-01-01

    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet......-dependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis of the cell is reported. The electrostatic potential distribution across the radial p-i-n junction GaAs NW is investigated by off-axis electron holography....

  17. Fabrication of InGaN/GaN double heterojunction solar cells with p-GaN nanorod arrays%含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作

    Institute of Scientific and Technical Information of China (English)

    唐龙娟; 郑新和; 张东炎; 董建荣; 王辉; 杨辉

    2011-01-01

    A method with p-GaN nanorod arrays is proposed to enhance the external quantum efficiency (EQE) of p-GaN/i-InGaN/n-GaN double heterojunctional solar cells. Inductively coupled plasma ethcing is utilized to form the p-GaN nanorod arrays with self-assembled Ni cluster as the etching mask. To form a smooth n-GaN surface for subsequent metal deposition, we demonstrate two-step etching of n-GaN mesa. The peak EQE of solar cells with p-GaN nanorod arrays reaches 55%, which shows an enhancement of 10% as compared with the conventional device with p-GaN film.%提出了一种提高p-GaN/i-InGaN/n-GaN双异质结太阳能电池外量子效率的方法,即将p-GaN刻蚀成纳米阵列结构.我们使用Ni退火形成微结构掩模,通过感应耦合等离子体(ICP)将p-GaN刻蚀纳米阵列结构.同时,提出了两步刻蚀n-GaN台面的制作工艺,以此在形成p-GaN纳米阵列结构时获得光滑的n-GaN层表面,以此改善后续金属电极的沉积.经测试,含有p-GaN纳米阵列结构的电池峰值外量子效率可达55%,比常规p-GaN膜层基InGaN/GaN太阳能电池的外量子效率提高了10%.

  18. Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs

    Directory of Open Access Journals (Sweden)

    Yasuhiko Terada

    2011-01-01

    Full Text Available We investigated carrier recombination dynamics in a low-temperature-grown GaAs (LT-GaAs/AlGaAs/GaAs heterostructure by laser-combined scanning tunneling microscopy, shaken-pulse-pair-excited STM (SPPX-STM. With the AlGaAs interlayer as a barrier against the flow of photocarriers, recombination lifetimes in LT-GaAs of 4.0 ps and GaAs of 4.8 ns were successfully observed separately. We directly demonstrated the high temporal resolution of SPPX-STM by showing the recombination lifetime of carriers in LT-GaAs (4.0 ps in the range of subpicosecond temporal resolution. In the carrier-lifetime-mapping measurement, a blurring of recombination lifetime up to 50 nm was observed at the LT-GaAs/AlGaAs boundary, which was discussed in consideration of the screening length of the electric field from the STM probe. The effect of the built-in potential on the signal, caused by the existence of LT-GaAs/AlGaAs/GaAs boundaries, was discussed in detail.

  19. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

    Directory of Open Access Journals (Sweden)

    Xinke Liu

    2017-09-01

    Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

  20. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

    Science.gov (United States)

    Liu, Xinke; Gu, Hong; Li, Kuilong; Guo, Lunchun; Zhu, Deliang; Lu, Youming; Wang, Jianfeng; Kuo, Hao-Chung; Liu, Zhihong; Liu, Wenjun; Chen, Lin; Fang, Jianping; Ang, Kah-Wee; Xu, Ke; Ao, Jin-Ping

    2017-09-01

    This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (˜104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (˜60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ˜1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

  1. Graphene-GaN Schottky Photodiodes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Integration of graphene as the top metal on GaN Schottky. This will replace platinum, which is 50% transparent at the desired wavelength, with graphene, which has...

  2. EXAFS characterization of amorphous GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Ridgway, M.C.; Glover, C.J. [Australia National Univ., Canberra (Australia); Foran, G.J. [Australian Nuclear Science and Technology Organization, Menai (Australia); Yu, K.M. [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

    1998-12-31

    The structural parameters of stoichiometric, amorphous GaAs have been determined with extended x-ray absorption fine structure (EXAFS) measurements performed in transmission mode at 10 K. Amorphous GaAs samples were fabricated with a combination of epitaxial growth, ion implantation and selective chemical etching. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to {approximately} 3.85 atoms from the crystalline value of four. All structural parameters were independent of implantation conditions and as a consequence, were considered representative of intrinsic, amorphous GaAs as opposed to an implantation-induced extrinsic structure.

  3. Optical anisotropy in GaSe

    Energy Technology Data Exchange (ETDEWEB)

    Seyhan, A.; Karabulut, O.; Akinoglu, B.G.; Aslan, B.; Turan, R. [Department of Physics, Middle East Technical University, 06531, Ankara (Turkey)

    2005-09-01

    Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k perpendicular to c) and parallel to the c-axis (k//c). Peak position of the PL emission band and the onset of the transmission have been found to be significantly different for these two cases. This observed anisotropy is related to anisotropic band structure and the selection rules for the optical absorption in layered GaSe. FTIR transmission spectrum is in good agreement with PL results. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Hydrogen molecules in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lavrov, E.V.; Weber, J

    2003-12-31

    GaAs samples treated in a hydrogen plasma have been studied by Raman spectroscopy. In addition to the known Raman line at 3912 cm{sup -1} of H{sub 2} trapped at the interstitial T{sub Ga} site surrounded by Ga neighbors, two new Raman signals at 4043 and 4112 cm{sup -1} have been observed at room temperature. The 4043 cm{sup -1} line is assigned to H{sub 2} trapped at the interstitial T{sub As} site with As closest neighbors and the 4112 cm{sup -1} line is associated with H{sub 2} trapped in voids formed by the hydrogen plasma. Para-H{sub 2} trapped at the interstitial T{sub Ga} site is shown to be unstable against irradiation with the band-gap light at room temperature and can be observed only at temperatures below 120 K.

  5. Triangle and GA Methods for UAVs Jamming

    Directory of Open Access Journals (Sweden)

    Yu Zhang

    2014-01-01

    Full Text Available We focus on how to jam UAVs network efficiently. The system model is described and the problem is formulated. Based on two properties and a theorem which helps to decide good location for a jammer, we present the Triangle method to find good locations for jammers. The Triangle method is easy to understand and has overall computational complexity of ON2. We also present a genetic algorithm- (GA- based jamming method, which has computational complex of OLMN2. New chromosome, mutation, and crossover operations are redefined for the GA method. The simulation shows that Triangle and GA methods perform better than Random method. If the ratio of jammers’ number to UAVs’ number is low (lower than 1/5 in this paper, GA method does better than Triangle method. Otherwise, Triangle method performs better.

  6. GaN three dimensional nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Dmitriev, V.; Irvin, K. [Cree Research, Inc., Durham, NC (United States); Zubrilov, A.; Tsvetkov, D.; Nikolaev, V. [Cree Research EED, St. Petersburg (Russian Federation); Jakobson, M.; Nelson, D.; Sitnikova, A. [A.F. Ioffe Inst., St. Petersburg (Russian Federation)

    1996-11-01

    The authors report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from {approximately}20 nm to more than 2 {micro}m. The average dot density ranged from 10{sup 7} to 10{sup 9} cm{sup {minus}2}. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

  7. Amphoteric arsenic in GaN

    CERN Document Server

    Wahl, U; Araújo, J P; Rita, E; Soares, JC

    2007-01-01

    We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As$\\scriptstyle_{Ga}\\,$ " anti-sites ” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “ miscibility gap ” in ternary GaAs$\\scriptstyle_{1-x}$N$\\scriptstyle_{x}$ compounds, which cannot be grown with a single phase for values of $x$ in the range 0.1<${x}$< 0.99.

  8. Data processing system of GA and PPPL

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Takayuki [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment

    2001-11-01

    Results of research in 1997 to General Atomics (GA) and Princeton Plasma Physics Laboratory (PPPL) are reported. The author visited the computer system of fusion group in GA. He joined the tokamak experiment in DIII-D, especially on the demonstration of the remote experiment inside U.S., and investigated the data processing system of DIII-D and the computer network, etc. After the visit to GA, He visited PPPL and exchanged the information about the equipment of remote experiment between JAERI and PPPL based on the US-Japan fusion energy research cooperation. He also investigated the data processing system of TFTR tokamak, the computer network and so on. Results of research of the second visit to GA in 2000 are also reported, which describes a rapid progress of each data processing equipment by the advance on the computer technology in just three years. (author)

  9. 2015 Cook & Tift County (GA) Lidar

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — TASK NAME: NOAA OCM Tift and Cook Counties GA Lidar Data Acquisition and Processing Production Task NOAA Contract No. EA133C-11-CQ-0010 Woolpert Order No. 75271...

  10. Influence of doping on the microstructure and kinetic parameters of GaSb-FeGa1.3 eutectics

    Science.gov (United States)

    Mamedov, I. Kh.; Ragimov, R. N.; Khalilova, A. A.; Arasly, D. G.; Aliev, M. I.

    2012-12-01

    Electron microscopy and X-ray spectroscopy analysis of GaSb-FeGa1.3 eutectic composite doped with tellurium atoms is performed. It is established that doping changes the GaSb-FeGa1.3 eutectics microstructure; sizes, shape, and density of FeGa1.3 metallic inclusions; and the interface regions between the matrix and inclusions. Influence of doping on the anisotropy of kinetic parameters is shown.

  11. Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires

    OpenAIRE

    Filippov, Stanislav; Jansson, Mattias; Stehr, Jan Eric; Palisaitis, Justinas; Persson, Per O.Å.; Ishikawa, Fumitaro; Chen, Weimin M.; Buyanova, Irina A.

    2016-01-01

    Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorpora...

  12. Morphotectonics of the Mascarene Islands

    Directory of Open Access Journals (Sweden)

    A. E. Scheidegger

    1998-06-01

    Full Text Available A study is made of the orientations (strikes/trends of joints, valleys, ridges and lineaments, i.e. of the (potentially morphotectonic features, of the Mascarene Islands (Reunion, Mauritius and Rodrigues in the Indian Ocean. It turns out that a connection exists between these features on all islands. For the joints alone, the results for Mauritius as a whole agree closely with those for Rodrigues as a whole, and also partially with those of Reunion. Inasmuch as the trends of the valleys, ridges and lineaments are related to the trends (strikes of the joints, a common morphotectonic predesign seems to be present for all features studied. The morphotectonic orientations on the island also agree closely with the trends of fracture zones, ridges and trenches in the nearby ocean bottom; which has had a bearing on the theories of the origin of the Mascarene Islands. Generally, a hot-spot origin is preferred for Reunion, and may be for Mauritius as well, although differing opinions have also been voiced. The dynamics of a hot-spot is hard to reconcile with the close fit of the joint strikes in Réunion with the trends of the Madagascar and Rodrigues fracture zones. The closely agreeing joint maxima in Mauritius and Rodrigues í across the deep Mauritius trench í also agree with the trend of that trench and with the trend of the Rodrigues fracture zone. Thus, it would appear as most likely that the trends of joints and of fracture zones are all part of the same pattern and are due to the same cause: viz. to action of the neotectonic stress field.

  13. Lodging Update: Providence, Rhode Island

    Directory of Open Access Journals (Sweden)

    Ragel Roginsky

    2013-04-01

    Full Text Available Each quarter, Pinnacle Advisory Group prepares an analysis of the New England lodging industry, which provides a regional summary and then focuses in depth on a particular market. These reviews look at recent and proposed supply changes, factors affecting demand and growth rates, and the effects of interactions between such supply and demand trends. In this issue, the authors spotlight the lodging market in Providence, Rhode Island.

  14. Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

    Science.gov (United States)

    Araki, Masahiro; Mochimizo, Noriaki; Hoshino, Katsuyuki; Tadatomo, Kazuyuki

    2007-02-01

    We have investigated the direct growth of nonpolar a-plane GaN layers on an r-plane sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A high-density nucleation of GaN islands was obtained on the r-plane sapphire substrate at the initial stage of the high-temperature growth without a buffer layer, which resulted in a two-dimensional (2D) growth mode. We studied the effects of V/III ratio growth conditions on the surface morphology and growth features of an a-plane GaN layer. The results showed that a high density of pits with an inverse-pyramidal shape were formed at a high V/III ratio, whereas a relatively low density of pits were formed at a low V/III ratio due to the increase in the rate of lateral growth along the c-axis direction. We successfully grew a-plane GaN layers with a flat and pit-free surface using the “two-step growth method”. The method consisted of growing a first layer at a high V/III ratio and growing a second layer at a low V/III ratio. We found that the first layer plays an important role in GaN layer growth. The formation of a void-free GaN layer with sidewall facets in the first step leads to a flat and pit-free layer grown at a high rate of lateral growth along the c-axis direction in the second step.

  15. Photoluminescence of Ga(AsBi)

    Energy Technology Data Exchange (ETDEWEB)

    Rosemann, Nils; Chernikov, Alexej; Bornwasser, Verena; Koester, N.S.; Koch, Martin; Kolata, Kolja; Chetterjee, Sangam; Koch, Stephan W. [Fachbereich Physik, Philipps-Universitaet Marburg (Germany); Imhof, Sebastian; Wagner, Christian; Traenhardt, Angela [Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Lu, Xianfeng; Johnson, Shane R. [Department of Electrical Engineering, Arizona State University, Tempe, AZ (United States); Beaton, Dan A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC (Canada); Tiedje, Thomas [Department of Electrical and Computer Engineering, University of Victoria, BC (Canada); Rubel, Oleg [Thunder Bay Regional Research Institute, Thunder Bay, ON (Canada); Department of Physics, Lakehead University, Thunder Bay, ON (Canada)

    2011-07-01

    Ga(AsBi) is a promising candidate for GaAs-based near-infrared emitters at telecommunication wavelength. To evaluate the potential of this material system we study the photoluminescence from such a bulk sample as function of pump power and lattice temperature. Strong disorder-related features are observed. To better quantify the experiments we analyze the data using a Monte Carlo approach. A two-scale model is introduced to account for both cluster localization and alloy disorder.

  16. Introduced mammals on Western Indian Ocean islands

    Directory of Open Access Journals (Sweden)

    James C. Russell

    2016-04-01

    Full Text Available The diversity of introduced mammals and their introduction history varies greatly across the Western Indian Ocean (WIO islands, from ancient introductions in the past millennia on islands off the East coast of Africa where extant terrestrial native mammal communities exist, to very recent invasions in the past decades on islands in the Mascarene archipelago. We compile the distribution of 16 introduced mammal taxa on 28 island groups comprising almost 2000 islands. Through an exhaustive literature review and expert consultation process we recorded all mammal eradications, and species recoveries which could be attributed to introduced mammal eradication or control. All island groups have been invaded by mammals, and invasive cats and rats in particular are ubiquitous, but cultural contingency has also led to regional invasions by other mammals such as lemurs, civets and tenrecs. Mammal eradications have been attempted on 45 islands in the WIO, the majority in the Seychelles and Mauritius, and where successful have resulted in spectacular recovery of species and ecosystems. Invasive mammalian predator eradication or control in association with habitat management has led to improved conservation prospects for at least 24 species, and IUCN red-list down-listing of eight species, in the Mascarene Islands. Future island conservation prioritisation in the region will need to take account of global climate change and predicted sea-level rises and coastal inundation. Greater investment and prioritisation in island conservation in the region is warranted, given its high biodiversity values and the extent of invasions.

  17. Pathogenicity island mobility and gene content.

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Kelly Porter

    2013-10-01

    Key goals towards national biosecurity include methods for analyzing pathogens, predicting their emergence, and developing countermeasures. These goals are served by studying bacterial genes that promote pathogenicity and the pathogenicity islands that mobilize them. Cyberinfrastructure promoting an island database advances this field and enables deeper bioinformatic analysis that may identify novel pathogenicity genes. New automated methods and rich visualizations were developed for identifying pathogenicity islands, based on the principle that islands occur sporadically among closely related strains. The chromosomally-ordered pan-genome organizes all genes from a clade of strains; gaps in this visualization indicate islands, and decorations of the gene matrix facilitate exploration of island gene functions. A %E2%80%9Clearned phyloblocks%E2%80%9D method was developed for automated island identification, that trains on the phylogenetic patterns of islands identified by other methods. Learned phyloblocks better defined termini of previously identified islands in multidrug-resistant Klebsiella pneumoniae ATCC BAA-2146, and found its only antibiotic resistance island.

  18. Island development: Local governance under globalization

    Directory of Open Access Journals (Sweden)

    Huei-Min Tsai

    2014-12-01

    Full Text Available Issues surrounding island development have generated a growing volume of research. What does it mean to develop? How can island communities maintain control over development processes to the benefit of the local economy, rather than seeing economic flows enter and exit the island with little or a primarily negative impact? And how important is local knowledge for edifying local governance and enhancing potentials for innovation in island development? Island histories have repeatedly been forwarded as exemplars and ‘lessons’ for global learning on (unsustainability. To consider these issues, we have selected a number of papers from among the presentations given at the International Geographical Union’s Commission on Islands Conference, Island Development: Local Economy, Culture, Innovation and Sustainability, which took place in the Penghu Archipelago, Taiwan, 1–5 October 2013. These papers serve as examples of how the processes of globalization have penetrated the borders and changed the political and economic structures of islands. They also explore how island-based innovations in science, technology, culture, and formal or informal governance might contribute to sustainable island development.

  19. Floating Cities, Islands and States

    CERN Document Server

    Bolonkin, Alexander

    2008-01-01

    Many small countries are in need of additional territory. They build landfills and expensive artificial islands. The ocean covers 71 per cent of the Earth surface. Those countries (or persons of wealth) starting the early colonization of the ocean may obtain advantages through additional territory or creating their own independent state. An old idea is building a big ship. The best solution to this problem, however, is the provision of floating cities, islands, and states. The author idea is to use for floating cities, islands, and states a cheap floating platform created from a natural ice field taken from the Arctic or Antarctic oceans. These cheap platforms protected by air-film (bottom and sides) and a conventional insulating cover (top) and having a cooling system can exist for an unlimited time. They can be increased in number or size at any time, float in warm oceans, travel to different continents and countries, serve as artificial airports, harbors and other marine improvements, as well as floating c...

  20. Generalized model of island biodiversity

    Science.gov (United States)

    Kessler, David A.; Shnerb, Nadav M.

    2015-04-01

    The dynamics of a local community of competing species with weak immigration from a static regional pool is studied. Implementing the generalized competitive Lotka-Volterra model with demographic noise, a rich dynamics with four qualitatively distinct phases is unfolded. When the overall interspecies competition is weak, the island species recapitulate the mainland species. For higher values of the competition parameter, the system still admits an equilibrium community, but now some of the mainland species are absent on the island. Further increase in competition leads to an intermittent "disordered" phase, where the dynamics is controlled by invadable combinations of species and the turnover rate is governed by the migration. Finally, the strong competition phase is glasslike, dominated by uninvadable states and noise-induced transitions. Our model contains, as a special case, the celebrated neutral island theories of Wilson-MacArthur and Hubbell. Moreover, we show that slight deviations from perfect neutrality may lead to each of the phases, as the Hubbell point appears to be quadracritical.

  1. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

    Science.gov (United States)

    Duan, Xiao-Ling; Zhang, Jin-Cheng; Xiao, Ming; Zhao, Yi; Ning, Jing; Hao, Yue

    2016-08-01

    A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage (V B) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. Project supported by the National Science and Technology Major Project, China (Grant No. 2013ZX02308-002) and the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61404099).

  2. The Y-Ag-Ga system

    Energy Technology Data Exchange (ETDEWEB)

    Krachan, T.; Stel' makhovych, B.; Kuz' ma, Yu

    2005-01-11

    The isothermal section at 670 K of the Y-Ag-Ga system in the region of 0-33 at.% Y has been constructed using X-ray diffraction data. The existence of earlier known ternary gallides has been confirmed. Their homogeneity regions, atomic coordinates and distribution of atoms in the structures have been determined: Y{sub 3}Ag{sub 2.55}Ga{sub 8.45} (La{sub 3}Al{sub 11}-type structure, a 0.4310(1) nm, b = 1.2865(3) nm, c = 0.9552(3) nm, R{sub F} = 0.043), YAg{sub 0.22}Ga{sub 1.78} (CaIn{sub 2}-type structure, a = 0.44565(1) nm, c 0.72032(2) nm, R{sub I} = 0.081), YAg{sub 0.74}Ga{sub 1.26} (KHg{sub 2}-type structure, a 0.45302(2) nm, b = 0.70805(3) nm, c = 0.78056(3) nm, R{sub I} = 0.059). The crystal structure of the new ternary compound YAg{sub 1.1}Ga{sub 1.9} ({beta}-YbAgGa{sub 2}-type structure, Pnma, a = 0.69654(3) nm, b = 0.43391(2) nm, c = 1.02126(5) nm, R{sub I} = 0.087) has been studied for the first time.

  3. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

    Science.gov (United States)

    Tapajna, M.; Hilt, O.; Bahat-Treidel, E.; Würfl, J.; Kuzmík, J.

    2015-11-01

    Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ˜105 s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due to coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.

  4. Lattice pulling effect and strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kong, X.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117, Berlin (Germany); Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M.A.; Calleja, E. [Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica, Ciudad Universitaria, 28040, Madrid (Spain)

    2015-04-01

    Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

    Science.gov (United States)

    Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

    2012-11-07

    InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

  6. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    Energy Technology Data Exchange (ETDEWEB)

    Prongjit, Patchareewan, E-mail: rsomchai@chula.ac.th; Pankaow, Naraporn, E-mail: rsomchai@chula.ac.th; Boonpeng, Poonyasiri, E-mail: rsomchai@chula.ac.th; Thainoi, Supachok, E-mail: rsomchai@chula.ac.th; Panyakeow, Somsak, E-mail: rsomchai@chula.ac.th; Ratanathammaphan, Somchai, E-mail: rsomchai@chula.ac.th [Semiconductor Device Research Laboratory (Nanotec Center of Excellence) Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330 (Thailand)

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  7. Optical Properties and Carrier Dynamics of GaAs/GaInAs Multiple-Quantum-Well Shell Grown on GaAs Nanowire by Molecular Beam Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu; Min, Jung-Wook; Kang, Seokjin; Myoung, NoSoung; Yim, Sang-Youp; Jo, Yong-Ryun; Kim, Bong-Joong; Lee, Yong Tak

    2016-12-01

    GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

  8. Cubic AlGaN/GaN structures for device application

    Energy Technology Data Exchange (ETDEWEB)

    Schoermann, Joerg

    2007-05-15

    The aim of this work was the growth and the characterization of cubic GaN, cubic AlGaN/GaN heterostructures and cubic AlN/GaN superlattice structures. Reduction of the surface and interface roughness was the key issue to show the potential for the use of cubic nitrides in futur devices. All structures were grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was first investigated to determine the Ga coverage of c-GaN during growth. Using the intensity of the electron beam as a probe, optimum growth conditions were found when a 1 monolayer coverage is formed at the surface. GaN samples grown under these conditions reveal excellent structural properties. On top of the c-GaN buffer c-AlGaN/GaN single and multiple quantum wells were deposited. The well widths ranged from 2.5 to 7.5 nm. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. We observed strong room-temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson- Schroedinger model calculation. We found that piezoelectric effects are absent in c-III nitrides with a (001) growth direction. Intersubband transition in the wavelength range from 1.6 {mu}m to 2.1 {mu}m was systematically investigated in AlN/GaN superlattices (SL), grown on 100 nm thick c-GaN buffer layers. The SLs consisted of 20 periods of GaN wells with a thickness between 1.5 nm and 2.1 nm and AlN barriers with a thickness of 1.35 nm. The first intersubband transitions were observed in metastable cubic III nitride structures in the range between 1.6 {mu}m and 2.1 {mu}m. (orig.)

  9. Photoelectric characteristics of metal-Ga{sub 2}O{sub 3}-GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalygina, V. M., E-mail: Kalygina@ngs.ru; Vishnikina, V. V.; Petrova, Yu. S.; Prudaev, I. A.; Yaskevich, T. M. [National Research Tomsk State University (Russian Federation)

    2015-03-15

    We investigate the effect of thermal annealing in argon and of oxygen plasma processing on the photoelectric properties of GaAs-Ga{sub 2}O{sub 3}-Me structures. Gallium-oxide films are fabricated by photostimulated electrochemical oxidation of epitaxial gallium-arsenide layers with n-type conductivity. The as-deposited films were amorphous, but their processing in oxygen plasma led to the nucleation of β-Ga{sub 2}O{sub 3} crystallites. The unannealed films are nontransparent in the visible and ultraviolet (UV) ranges and there is no photocurrent in structures based on them. After annealing at 900°C for 30 min, the gallium-oxide films contain only β-Ga{sub 2}O{sub 3} crystallites and become transparent. Under illumination of the Ga{sub 2}O{sub 3}-GaAs structures with visible light, the photocurrent appears. This effect can be attributed to radiation absorption in GaAs. The photocurrent and its voltage dependence are determined by the time of exposure to the oxygen plasma. In the UV range, the sensitivity of the structures increases with decreasing radiation wavelength, starting at λ ≤ 230 nm. This is due to absorption in the Ga{sub 2}O{sub 3} film. Reduction in the structure sensitivity with an increase in the time of exposure to oxygen plasma can be caused by the incorporation of defects both at the Ga{sub 2}O{sub 3}-GaAs interface and in the Ga{sub 2}O{sub 3} film.

  10. Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.

    2017-04-01

    Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1µm. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

  11. Interaction of terahertz radiation with surface and interface plasmon-phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

    Science.gov (United States)

    Požela, J.; Požela, K.; Šilėnas, A.; Širmulis, E.; Jucienė, V.

    2013-01-01

    Surface phonon and plasmon-phonon polariton characteristics of GaAs, Al x Ga1- x As/GaAs, and GaN/Al2O3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.

  12. Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

    Science.gov (United States)

    Kangawa, Yoshihiro; Ito, Tomonori; Koukitu, Akinori; Kakimoto, Koichi

    2014-10-01

    The surface stability, growth process, and structural stability of InGaN and InN are reviewed from a theoretical viewpoint. In 2001, a new theoretical approach based on an ab initio calculation was developed. This theoretical approach enables the investigation of the influence of growth conditions such as partial pressure and temperature on the surface stability. The theoretical approach is applied to the research on the In incorporation efficiency in InGaN grown on nonpolar and semipolar surfaces. The calculation results suggest that the N-H layer formed on such surfaces has a crucial role in In incorporation. Moreover, the structural stability of InN grown by pressurized-reactor MOVPE is reviewed. It was found by the theoretical approach that \\{ 1\\bar{1}\\bar{1}\\} facet formation causes the spontaneous formation of islands with the zinc-blende structure.

  13. Lead levels on traffic-less islands.

    Science.gov (United States)

    Elwood, P C; Blaney, R; Robb, R C; Essex-Cater, A J; Davies, B E; Toothill, C

    1985-09-01

    Surveys were conducted on three traffic-less islands: Tory and Aran, off the coast of Ireland, and Sark, one of the Channel Islands off the coast of France. Identical methods were used in surveys in three other areas, all of which have heavy gasoline driven traffic. These were Jersey, another of the Channel Islands, Ebbw Vale--a mixed industrial area, and Cardiff--the capital city of Wales. Environmental lead levels were very low in two of the traffic-less islands, but on the third, house dust lead levels were comparable with levels found throughout Wales. Blood lead levels on one of the islands were similar to those which have been reported for unaccultured remote tribes, but on the other two traffic-less islands blood lead levels were comparable with those of areas on the mainland of Wales.

  14. A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

    Institute of Scientific and Technical Information of China (English)

    Yan Qi-Rong; Yan Qi-Ang; Shi Pei-Pei; Niu Qiao-Li; Li Shu-Ti; Zhang Yong

    2013-01-01

    A strain-compensated InGaN quantum well (QW) active region employing a tensile A1GaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode (LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the AI composition of the strain-compensated A1GaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.

  15. Effect of extra nonmagnetic Ga atoms on lattice ordering and magnetic properties of Fe2CoGa and Co2FeGa Heusler compounds

    Directory of Open Access Journals (Sweden)

    Hakimi

    2014-04-01

    Full Text Available Arc-melting with ball milling was used for preparing Fe2CoGa1+x and Co2FeGa1+x (x=0,0.2 Heusler samples. Effect of extra nonmagnetic Ga atoms on lattice ordering and magnetic properties of Fe2CoGa and Co2FeGa Heusler compounds was studied. Rietveld refinement showed that lattice parameter of the samples increases in the presence of extra Ga atoms. Results showed that Co2FeGa1.2 has a partial lattice disordering. Saturation magnetization of Co2FeGa sample was lower than Slater – Paulig prediction due to the crystallite size on a scale of nanometer. Reduction of saturation magnetization by increasing Ga atoms was explained through the change of lattice parameter, lattice ordering, and crystallite size. Saturation magnetization of Fe2CoGa sample was greater than Slater – Paulig value. Change of lattice parameter by increasing Ga atoms resulted a decrease of saturation magnetization in Fe2CoGa1.2

  16. 71Ga Chemical Shielding and Quadrupole Coupling Tensors of the Garnet Y(3)Ga(5)O(12) from Single-Crystal (71)Ga NMR

    DEFF Research Database (Denmark)

    Vosegaard, Thomas; Massiot, Dominique; Gautier, Nathalie

    1997-01-01

    A single-crystal (71)Ga NMR study of the garnet Y(3)Ga(5)O(12) (YGG) has resulted in the determination of the first chemical shielding tensors reported for the (71)Ga quadrupole. The single-crystal spectra are analyzed in terms of the combined effect of quadrupole coupling and chemical shielding ...

  17. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Wang Yongjin

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE. Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.

  18. Sharp Goss orientation and large magnetostriction in the rolled columnar-grained Fe–Ga alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Chao; Li, Jiheng; Zhang, Wenlan; Bao, Xiaoqian; Gao, Xuexu, E-mail: gaox@skl.ustb.edu.cn

    2015-01-15

    In this work, the 〈1 0 0〉 directional solidified feedstock slabs were used to produce the rolled Fe–Ga sheets, and sharp Goss orientation was developed in the 0.3 mm sheets after annealing processes. The area fraction of Goss grains in the annealed binary Fe–Ga sheets approached to 62.4% without abnormal grain growth, accompanied with a maximum magnetostriction (λ{sub //}−λ{sub ⊥}) of 199 ppm. The addition of only 0.1 at% NbC notably promoted the abnormal Goss grain growth without sulfur annealing, and large single-crystal-like grains, up to several centimeters, were obtained with few island-like grains after sulfur annealing and final Ar/H{sub 2} annealing processes. High magnetostriction (λ{sub //}−λ{sub ⊥}) of 245 ppm with little deviation was achieved in the (Fe{sub 83}Ga{sub 17}){sub 99.9}(NbC){sub 0.1} sheets, and a large magnetostrictive strain (λ{sub //}) up to 243 ppm under no pre-stress was observed with an applied magnetic field along the rolling direction. - Highlights: • The 〈1 0 0〉 oriented feedstock slabs were used to prepare Goss oriented Fe–Ga sheets. • Abnormal Goss grain growth was observed in the 0.3 mm sheets with only 0.1 at% NbC. • A high λ{sub //} of 243 ppm under no pre-stress was observed along the RD.

  19. Capture and release of carriers in InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Porte, Henrik; Daghestani, N.;

    2009-01-01

    We observe the ultrafast capture and release of charge carriers in InGaAs/GaAs quantum dots (QDs) at room-temperature with time-resolved terahertz spectroscopy. For excitation into the barrier states, a decay of the photoinduced conductivity, due to capture of carriers into the nonconducting QD s...

  20. InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Hvam, Jørn Märcher; Langbein, Wolfgang

    2000-01-01

    We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group...

  1. Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells

    DEFF Research Database (Denmark)

    Larionov, A. V.; Timofeev, V. B.; Hvam, Jørn Märcher;

    2000-01-01

    Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light, the...

  2. FIR Induced Intrinsic Exciton Transitions in GaAs/AlGaAs Superlattices

    DEFF Research Database (Denmark)

    Dremin, A. A.; Timofeev, V. B.; Birkedal, Dan;

    1997-01-01

    Intrinsic transitions of confined excitons in GaAs/AlGaAs superlattices with different barrier widths have been studied with the use of resonant far-infrared absorption under variation of magnetic field perpendicular and tilted with respect to the growth directions. Few resonances have been...

  3. MBE Growth and Characterization of Zincblende GaN and GaN/AlN Structures

    Science.gov (United States)

    1997-07-15

    This Program includes fundamental studies of Molecular beam epitaxial ( MBE ) growth of GaN and its related alloys and heterostructures. In additions...physics of MBE growth , and the optical and electrical properties for GaN-based device application. 1

  4. Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

    Institute of Scientific and Technical Information of China (English)

    Lü Ling; Zhang Jin-Cheng; Xue Jun-Shuai; Ma Xiao-Hua; Zhang Wei; Bi Zhi-Wei; Zhang Yue; Hao Yue

    2012-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 1 MeV neutron irradiation at a neutron fluence of 1 × 1015 cm-2.The dc characteristics of the devices,such as the drain saturation current and the maximum transconductance,decreased after neutron irradiation. The gate leakage currents increased obviously after neutron irradiation.However,the rf characteristics,such as the cut-off frequency and the maximum frequency,were hardly affected by neutron irradiation.The AlGaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism.It is shown in the Hall measurements and capacitance-voltage tests that the mobility and concentration of two-dimensional electron gas (2DEG) decreased after neutron irradiation.There was no evidence of the full-width at half-maximum of X-ray diffraction (XRD) rocking curve changing after irradiation,so the dislocation was not influenced by neutron irradiation.It is concluded that the point defects induced in AlGaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of AlGaN/GaN HEMT devices.

  5. Carrier dynamics in submonolayer InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Zhang, Yating; Hvam, Jørn Märcher

    2006-01-01

    Carrier dynamics of submonolayer InGaAs/GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon...

  6. Exciton dynamics in GaAs/AlxGa1-xAs quantum wells

    DEFF Research Database (Denmark)

    Litvinenko, K.; Birkedal, Dan; Lyssenko, V. G.

    1999-01-01

    The changes induced in the optical absorption spectrum of a GaAs/AlxGa1-xAs multiple quantum well due to a photoexcited carrier distribution are reexamined. We use a femtosecond pump-probe technique to excite excitons and free electron-hole pairs. We find that for densities up to 10(11) cm(-2...

  7. Excitonic complexes in GaN/(Al,Ga)N quantum dots

    Science.gov (United States)

    Elmaghraoui, D.; Triki, M.; Jaziri, S.; Muñoz-Matutano, G.; Leroux, M.; Martinez-Pastor, J.

    2017-03-01

    Here we report a theoretical investigation of excitonic complexes in polar GaN/(Al,Ga)N quantum dots (QDs). A sum rule between the binding energies of charged excitons is used to calculate the biexciton binding energy. The binding energies of excitonic complexes in GaN/AlN are shown to be strongly correlated to the QD size. Due to the large hole localization, the positively charged exciton energy is found to be always blueshifted compared to the exciton one. The negatively charged exciton and the biexciton energy can be blueshifted or redshifted according to the QD size. Increasing the size of GaN/AlN QDs makes the identification of charged excitons difficult, and the use of an Al0.5Ga0.5N barrier can be advantageous for clear identification. Our theoretical results for the binding energy of exciton complexes are also confronted with values deduced experimentally for InAs/GaAs QDs, confirming our theoretical prediction for charged excitonic complexes in GaN/(Al,Ga)N QDs. Finally, we realize that the trends of excitonic complexes in QDs are significantly related to competition between the local charge separation (whatever its origin) and the correlation effect. Following our findings, entangled photons pairs can be produced in QDs with careful control of their size in order to obtain zero exciton–biexciton energy separation.

  8. Spin injection from Co2MnGa into an InGaAs quantum well

    DEFF Research Database (Denmark)

    Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.;

    2008-01-01

    We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin...

  9. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.

  10. Submicron-AlGaN/GaN MMICs for Space Applications

    NARCIS (Netherlands)

    Quay, R.; Waltereit, P.; Kühn, J.; Brückner, P.; Heijningen, M. van; Jukkala, P.; Hirche, K.; Ambacher, O.

    2013-01-01

    This paper reports on two AlGaN/GaN MMICtechnologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency. Dual-s

  11. Photocorrosion metrology of photoluminescence emitting GaAs/AlGaAs heterostructures

    Science.gov (United States)

    Aithal, Srivatsa; Liu, Neng; Dubowski, Jan J.

    2017-01-01

    High sensitivity of the photoluminescence (PL) effect to surface states and chemical reactions on surfaces of PL emitting semiconductors has been attractive in monitoring photo-induced microstructuring of such materials. To address the etching at nano-scale removal rates, we have investigated mechanisms of photocorrosion of GaAs/Al0.35Ga0.65As heterostructures immersed either in deionized water or aqueous solution of NH4OH and excited with above-bandgap radiation. The difference in photocorrosion rates of GaAs and Al0.35Ga0.65As appeared weakly dependent on the bandgap energy of these materials, and the intensity of an integrated PL signal from GaAs quantum wells or a buried GaAs epitaxial layer was found dominated by the surface states and chemical reactivity of heterostructure surfaces revealed during the photocorrosion process. Under optimized photocorrosion conditions, the method allowed resolving a 1 nm thick GaAs sandwiched between Al0.35Ga0.65As layers. We demonstrate that this approach can be used as an inexpensive, and simple room temperature tool for post-growth diagnostics of interface locations in PL emitting quantum wells and other nano-heterostructures.

  12. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  13. Submicron-AlGaN/GaN MMICs for Space Applications

    NARCIS (Netherlands)

    Quay, R.; Waltereit, P.; Kühn, J.; Brückner, P.; Heijningen, M. van; Jukkala, P.; Hirche, K.; Ambacher, O.

    2013-01-01

    This paper reports on two AlGaN/GaN MMICtechnologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency. Dual-s

  14. Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs (POSTPRINT)

    Science.gov (United States)

    2014-10-01

    identifying and understanding the failure mechanisms that limit the safe operating area of GaN HEMTs. 15. SUBJECT TERMS aluminum gallium nitride ... gallium nitride , HEMTs, semiconductor device reliability, transistors 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER...area of GaN HEMTs. Index Terms— Aluminum gallium nitride , gallium nitride , HEMTs, semiconductor device reliability, transistors. I. INTRODUCTION A

  15. Robust X-band LNAs in AlGaN/GaN technology

    NARCIS (Netherlands)

    Janssen, J.P.B.; Heijningen, M. van; Visser, G.C.; Rodenburg, M.; Johnson, H.K.; Uren, M.J.; Morvan, E.; Vliet, F.E. van

    2009-01-01

    Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designe

  16. Coherent dynamics of interwell excitons in GaAs/AlxGa1-xAs superlattices

    DEFF Research Database (Denmark)

    Mizeikis, V.; Birkedal, Dan; Langbein, Wolfgang Werner;

    1997-01-01

    Coherent exciton dynamics in a GaAs/AlxGa1-xAs narrow-miniband superlattice is studied by spectrally resolved transient four-wave mixing. Coherent optical properties of the investigated structure are found to be strongly affected by the existence of two different heavy-hole excitonic states. One ...

  17. Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

    Energy Technology Data Exchange (ETDEWEB)

    Geelen, A. van [Nijmegen Univ. (Netherlands). Res. Inst. for Mater.; Hageman, P.R. [Nijmegen Univ. (Netherlands). Res. Inst. for Mater.; Bauhuis, G.J. [Nijmegen Univ. (Netherlands). Res. Inst. for Mater.; Rijsingen, P.C. van [Nijmegen Univ. (Netherlands). Res. Inst. for Mater.; Schmidt, P. [Nijmegen Univ. (Netherlands). Res. Inst. for Mater.; Giling, L.J. [Nijmegen Univ. (Netherlands). Res. Inst. for Mater.

    1997-03-01

    Modifications to the existing epitaxial lift-off (ELO) method are described, which enable lift-off of large area devices (like solar cells). With the modified ELO method crack-free III-V films were obtained, up to 2 inch, in diameter and 1-6 {mu}m thick. For the first time epitaxial lift-off GaAs solar cells were made which contained an etch sensitive Al{sub 0.85}Ga{sub 0.15}As window layer. An energy conversion efficiency of 9.9% (AM1.5Gx1) was measured for the ELO GaAs cells. Compared to the thick GaAs reference cell, ELO cells still suffer from a low fill factor due to series and shunt resistances. Current GaAs ELO cells represent a power to weight ratio of 200 W kg{sup -1}. Because of the high selectivity of the ELO method, GaAs substrates remain unaffected after ELO. Reuse of a GaAs substrate after ELO was investigated in order to reduce the cost of III-V solar cell modules. With a simple cleaning procedure, GaAs substrates could be used at least four times without degradation of the minority carrier lifetime or carrier mobility of the grown epilayers. (orig.)

  18. Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings.

    Science.gov (United States)

    Abbarchi, Marco; Cavigli, Lucia; Somaschini, Claudio; Bietti, Sergio; Gurioli, Massimo; Vinattieri, Anna; Sanguinetti, Stefano

    2011-10-31

    A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications.

  19. Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David

    We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers....

  20. Terahertz study of ultrafast carrier dynamics in InGa/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David

    2009-01-01

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay...

  1. Terahertz microbolometers based on disordered GaAs and GaN heterostructures

    Science.gov (United States)

    Wang, Kai; Ramaswamy, R.; Muraviev, A.; Sergeev, A.; Mitin, V.; Gaska, R.

    2011-03-01

    We present our results on design, fabrication, and characterization of hot-electron bolometers based on low-mobility two-dimensional electron gas (2DEG) heterostructures for THz heterodyne detection. Microbolometers based on GaAs/AlGaAs and GaN/AlGaN heterostructures have been fabricated and tested. Low contact resistances (0.2 ohm-mm for GaN and 0.7 ohm-mm for GaAs) were achieved. We determined the carrier concentration from the Hall measurements and the electron relaxation time from the mobility measurements. We also investigated kinetic parameters: temperature derivate of the resistivity and the electron cooling time. Optical characterization includes the transitivity measurements. The results show that the coupling to the THz radiation is mainly due to the Drude absorption, which increases in disordered structures. Temperature-dependent resistivity and electron cooling are determined by inelastic electron scattering on optical phonons. Finally, we compare GaAs and GaN microbolometers and analyze their parameters for various applications in THz sensing.

  2. Isothermal currents in InSe, GaSe, and GaS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Micocci, G.; Rizzo, A.; Tepore, A.; Zuanni, F. (Lecce Univ. (Italy). Ist. di Fisica)

    1983-11-16

    Isothermal current-time measurements are performed on InSe, GaSe, and GaS single crystals. The results reveal the presence of trapping centres and their activation energies and capture cross-sections are determined. The limitations of this method for the determination of trapping parameters in crystals are also discussed.

  3. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2014-01-01

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact i

  4. Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser

    KAUST Repository

    Al-Jabr, A. A.

    2015-09-28

    We demonstrated the first orange laser diode at room temperature with a decent total output power of ∼46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.

  5. Submicron-AlGaN/GaN MMICs for Space Applications

    NARCIS (Netherlands)

    Quay, R.; Waltereit, P.; Kühn, J.; Brückner, P.; Heijningen, M. van; Jukkala, P.; Hirche, K.; Ambacher, O.

    2013-01-01

    This paper reports on two AlGaN/GaN MMICtechnologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency.

  6. Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

    DEFF Research Database (Denmark)

    MacLeod, S. J.; See, A. M.; Keane, Z. K.

    2014-01-01

    Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However...

  7. Proposing New Wilderness Areas: Okefenokee, Pelican Islands, Island Bay, Cedar Keys, Passage Key, and Wichita Mountains

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — President Transmittal on the proposal of wilderness additions that include Okefenokee, Pelican Islands, Island Bay, Cedar Keys, Passage Key, and Wichita Mountains.

  8. Progress report on field studies in the Aleutian Islands, Semidi Islands and Bering Sea, 1983

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This report summarizes work in the Aleutian Islands, Semidi Islands, and Bering Sea in support of work unit 953.10. Distribution and abundance of birds as seas (work...

  9. On the form of species–area relationships in habitat islands and true islands

    DEFF Research Database (Denmark)

    Matthews, Thomas J.; Guilhaumon, François; Triantis, Kostas A.

    2016-01-01

    , and was the highest ranked model overall. In general, the more complex models performed badly. Average z-values were significantly lower for habitat island datasets than for true islands, and were higher for mountaintop and urban habitat islands than for other habitat island types. Average c-values were significantly...... lower for oceanic islands, and significantly higher for inland water-body islands, than for habitat islands. Values of z and c were related to dataset characteristics including the ratio of the largest to smallest island and the maximum and minimum richness values in a dataset. Main conclusions: Our...... multimodel comparisons demonstrated the nonlinear implementation of the power model to be the best overall model and thus to be a sensible choice for general use. As the z-value of the log–log power model varied in relation to ecological and geographical properties of the study systems, caution should...

  10. Pine Island, Matlacha Pass, Island Bay, and Caloosahatchee National Wildlife Refuges: Comprehensive Conservation Plan

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This Comprehensive Conservation Plan (CCP) was written to guide management on Pine Island, Matlacha Pass, Island Bay, and Caloosahatchee NWRs for the next 15 years....

  11. Backscatter 0.5m TIFF Mosaic of St. Croix (Buck Island), US Virgin Islands, 2004

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — This image represents a 0.5 meter resolution backscatter mosaic of the north shore of Buck Island, St. Croix, US Virgin Islands. NOAA's NOS/NCCOS/CCMA Biogeography...

  12. Narrative Report Mackay Island National Wildlife Refuge and Fisherman Island National Wildlife Refuge: Calendar year 1970

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This narrative report for Mackay Island National Wildlife Refuge and Fisherman Island National Wildlife Refuge summarizes refuge activities for calendar year 1970....

  13. Islandness or Smallness? A Comparative Look at Political Institutions in Small Island States

    Directory of Open Access Journals (Sweden)

    Dag Anckar

    2006-05-01

    Full Text Available In order to explicate the relevance of the island dimension for political categories, for each of seven political institutions, a series of four comparisons are conducted on a global basis. The first is between small island states and all other states, the second is between small island states and larger island states, the third is between small island states and small mainland states, and the fourth is between island states and mainland states, regardless of size. The finding is that islandness links in many instances to the choice of institutional settings. Political scientists are therefore well-advised to include in their analyses islandness among the factors that shape institutional choices.

  14. Introduced arctic fox eradication at Rat Island, Aleutian Islands, Alaska, summer 1984

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Mechanical means similar to those employed on Amata Island during the summer of 1983 were used to attempt eradication of fox on Rat Island. These labor intensive...

  15. Narrative report Mackay Island National Wildlife Refuge and Fisherman Island National Wildlife Refuge: Calendar year 1971

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This narrative report for Mackay Island National Wildlife Refuge and Fisherman Island National Wildlife Refuge summarizes refuge activities for calendar year 1971....

  16. Energy Transition Initiative, Island Energy Snapshot - British Virgin Islands (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2015-03-01

    This profile provides a snapshot of the energy landscape of the British Virgin Islands (BVI), one of three sets of the Virgin Island territories in an archipelago making up the northern portion of the Lesser Antilles.

  17. CRED 20m Gridded bathymetry of Necker Islands, Northwestern Hawaiian Islands, USA (NetCDF format)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Gridded bathymetry of the shelf and slope environments of Necker Island, Northwestern Hawaiian Islands, Hawaii, USA. This netCDF includes multibeam bathymetry from...

  18. Anomalous Hall effect in epitaxially grown ferromagnetic FeGa/Fe3Ga hybrid structure: Evidence of spin carrier polarized by clusters

    Science.gov (United States)

    Duc Dung, Dang; Cho, Sunglae

    2013-05-01

    The anomalous Hall resistance relative with magnetic anisotropy of clusters Fe3Ga in Fe3Ga/Fe-Ga hybrid structural epitaxial was reported. The out-of-plane magnetic anisotropy was obtained for Fe3Ga/Fe-Ga hybrid structure, while in-plane magnetic anisotropy is shown in the single Fe-Ga phase epitaxial on GaAs(001). The observation of trend of saturation Hall resistance in Fe3Ga/Fe-Ga hybrid structural is compared with the Fe-Ga single crystal, which is solid evidence for spin polarization by local magnetic clusters.

  19. Tourism and sustainability in the Lakshadweep Islands

    OpenAIRE

    Kokkranikal, Jithendran; Baum, Tom

    2011-01-01

    This chapter describes tourism to the ecologically fragile Lakshadweep Islands of the Indian Ocean, which considers the development of tourism in the islands within the context of sustainability. Through an examination of the structural and developmental features of Lakshadweep tourism, the chapter seeks to identify specific development and management patterns, if any, and to explore potential strategies for promoting sustainability-oriented tourism in the Lakshadweep Islands.

  20. The megazoobenthos of the Scotia Arc islands

    Directory of Open Access Journals (Sweden)

    Ana Ramos

    1999-12-01

    Full Text Available Megabenthic epifauna composition and distribution from the Scotia Arc islands based on data collected during the Antarctic summer of 1986-87 is presented. Samples were taken from bottom trawl catches at 345 stations (29 at Shag Rocks, 104 at South Georgia, 8 at the South Sandwich Islands, 93 at the South Orkney Islands, 46 at Elephant Island, and 65 at the South Shetland Islands, from 26 to 643 m depth. Among the most striking features of the faunistic composition of the area, pointed out by multivariate analysis, are the singularity of Shag Rocks, closer to the Magellan region, and of the volcanic South Sandwich Islands, as well as the similarity of South Georgia and the South Orkney Islands and that of the islands nearest to the Antarctic continent, especially Elephant Island and the South Shetlands Islands. This similarity is due to the higher frequency and abundance of the most characteristic taxa in the Antarctic epibenthos, such as sessile suspension feeders (sponges, calcareous bryozoans, pennatulids, crinoids, and motile fauna with a wide variety of trophic strategies (asteroids, holothurians, pycnogonids, large isopods and gammarids. These data confirm the fact that the long-lived suspension-feeder communities, demosponges and hexactinellids, characteristic of the Antarctic epibenthos stretch to the eastern shelf of South Georgia without reaching the north-west of this island, the South Sandwich Islands, and Shag Rocks. Some of the zones with rich communities of sessile filter-feeders, long-lived sponges or reef formations of calcareous bryozoans or serpulids should be proposed as Specially Protected Areas.

  1. Island-Trapped Waves, Internal Waves, and Island Circulation

    Science.gov (United States)

    2014-09-30

    Outreach During the cruise, while surveying around Helen Reef , Revelle received a radio call from the conservation officers on the island asking for...from the government of Palau to allow us to deliver some water and food to the officers. Governor Patris of Hatohobei State and the Coral Reef ...black. 4 0.5 m s−1 Merir Helen Reef 0 to 200 m 131 131.5 132 132.5 133 133.5 2.5 3 3.5 4 4.5 5 5.5 6 Figure 5: The NECC’s depth-mean eastward currents

  2. Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Tao Tao; Han Ping; Shi Yi; Zheng Youdou; Zhang Zhao; Liu Lian; Su Hui; Xie Zili; Zhang Rong; Liu Bin; Xiu Xiangqian; Li Yi

    2011-01-01

    InGaN filmsweredepositedon(0001)sapphiresubstrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy (SEM) and atomic force microscopy (AFM).Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.

  3. Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

    Science.gov (United States)

    Bairamov, B. H.; Aydinli, A.; Tanatar, B.; Güven, K.; Gurevich, S.; Mel'tser, B. Ya.; Ivanov, S. V.; Kop'ev, P. S.; Smirnitskii, V. B.; Timofeev, F. N.

    1998-10-01

    We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al0.3Ga0.7As quantum-well wires with effective wire widths ofL = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at οL10 = 285.6 cm-1forL = 11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderleinas applied to the GaAs/Al0.3Ga0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques.

  4. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

    Science.gov (United States)

    Neplokh, Vladimir; Messanvi, Agnes; Zhang, Hezhi; Julien, Francois H; Babichev, Andrey; Eymery, Joel; Durand, Christophe; Tchernycheva, Maria

    2015-12-01

    We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.

  5. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

    Science.gov (United States)

    Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

    2012-10-05

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  6. High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities

    Science.gov (United States)

    Mitrofanov, Oleg; Schmult, S.; Manfra, M. J.; Siegrist, T.; Weimann, N. G.; Sergent, A. M.; Molnar, R. J.

    2007-02-01

    We demonstrate high-reflectivity crack-free Al 0.18Ga 0.82N/Al 0.8Ga 0.2N distributed Bragg reflectors (DBR) and monolithic microcavities grown by molecular beam epitaxy on thick c-axis GaN templates. The elastic strain energy in the epilayer is minimized by compensating the compressive and tensile stress in every period of the DBR structure. A 25 period DBR mirror provides a 26nm-wide stop band centered at 347 nm with the maximum reflectivity higher than 99%. The high-reflectivity DBRs can be used to form high Q-factor monolithic AlGaN/AlGaN microcavities.

  7. InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide

    Science.gov (United States)

    Das, Utpal; Berger, Paul R.; Bhattacharya, Pallab K.

    1987-10-01

    A monolithically integrated guided-wave modulator has been realized by using molecular-beam epitaxial regrowth and ion-milling techniques. The guiding and modulating regions consist, respectively, of In-doped GaAs and GaAs/In(0.34)Ga(0.66)As strained-layer multiquantum wells. Modulation is achieved by field-enhanced electroabsorption in the multiquantum wells. The insertion loss of the modulator is 0.9 dB, and the transmission loss in the guides is less than or equal to 1 dB/cm. The temporal response of similar GaAs/InGaAs as-grown photodiodes to pulsed laser excitation is characterized by a rise time of 115 psec.

  8. Ga crystallization dynamics during annealing of self-assisted GaAs nanowires.

    Science.gov (United States)

    Scarpellini, David; Fedorov, Alexey; Somaschini, Claudio; Frigeri, Cesare; Bollani, Monica; Bietti, Sergio; Nöetzel, Richard; Sanguinetti, Stefano

    2017-01-27

    In As atmosphere, we analyzed the crystallization dynamics during post-growth annealing of Ga droplets residing at the top of self-assisted GaAs nanowires grown by molecular beam epitaxy. The final crystallization steps, fundamental to determining the top facet nanowire morphology, proceeded via a balance of Ga crystallization via vapor-liquid-solid and layer-by-layer growth around the droplet, promoted by Ga diffusion out of the droplet perimeter, As desorption, and diffusion dynamics. By controlling As flux and substrate temperature the transformation of Ga droplets into nanowire segments with a top surface flat and parallel to the substrate was achieved, thus opening the possibility to realize atomically sharp vertical heterostructures in III-As self-assisted nanowires through group III exchange.

  9. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    Energy Technology Data Exchange (ETDEWEB)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D₀=0.53(×2.1±1) cm² s⁻¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  10. Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures

    Science.gov (United States)

    Bellotti, Enrico; Driscoll, Kristina; Moustakas, Theodore D.; Paiella, Roberto

    2008-03-01

    Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo study of carrier dynamics in two structures based on the same design scheme for emission at 2THz, consisting of GaN /AlGaN or GaAs /AlGaAs quantum wells. The population inversion and hence the gain coefficient of the nitride device are found to exhibit a much weaker (by a factor of over 3) temperature dependence and to remain large enough for laser action even without cryogenic cooling.

  11. Generation of acoustic terahertz waves in hybrid InGaN/GaN quantum wells

    Science.gov (United States)

    Mahat, Meg; Llopis, Antonia; Choi, Tae Youl; Periera, Sergio; Watson, Ian; Neogi, Arup

    2015-03-01

    We have carried out differential transmission measurements on InGaN/ GaN quantum wells with Au nanoparticles inserted inside V-pits with high filling fraction. We have observed acoustic wave packets generated with multiple THz frequencies as 0.12 THz from GaN buffer layer, 0.22 THz from Au-InGaN multiple quantum wells region, 0.07 THz from sapphire substrate, and 0.17 THz mixed signals from the sample. These THz wave packets are observed as a result of generation of coherent acoustic phonons propagating in hybrid Au-InGaN quantum wells. The study of these acoustic THz wave generation is crucial for the imaging of nanostructures.

  12. Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

    Science.gov (United States)

    Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans; Weyers, Markus

    2016-11-01

    Waveguide (WG) architectures of 420 nm emitting InGaN/GaN diode lasers are analyzed by photoluminescence and photocurrent spectroscopy using a nearfield scanning optical microscope that scans along their front facets. The components of the ‘optical active cavity’, quantum wells, WGs, and cladding layers are individually inspected with a spatial resolution of ∼100 nm. Separate analysis of the p- and n-sections of the WG was achieved, and reveals defect levels in the p-part. Moreover, it is demonstrated that the homogeneity of the n-WG section directly affects the quantum wells that are grown on top of this layer. Substantially increased carrier capture efficiencies into InGaN/GaN-WGs compared to GaN-WGs are demonstrated.

  13. A hole accelerator for InGaN/GaN light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  14. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE.

    Science.gov (United States)

    Tourbot, G; Bougerol, C; Grenier, A; Den Hertog, M; Sam-Giao, D; Cooper, D; Gilet, P; Gayral, B; Daudin, B

    2011-02-18

    The structural and optical properties of InGaN/GaN nanowire heterostructures grown by plasma-assisted molecular beam epitaxy have been studied using a combination of transmission electron microscopy, electron tomography and photoluminescence spectroscopy. It is found that, depending on In content, the strain relaxation of InGaN may be elastic or plastic. Elastic relaxation results in a pronounced radial In content gradient. Plastic relaxation is associated with the formation of misfit dislocations at the InGaN/GaN interface or with cracks in the InGaN nanowire section. In all cases, a GaN shell was formed around the InGaN core, which is assigned to differences in In and Ga diffusion mean free paths.

  15. High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers

    Science.gov (United States)

    Lee, Sung-Nam; Son, J. K.; Paek, H. S.; Sung, Y. J.; Kim, K. S.; Kim, H. K.; Kim, H.; Sakong, T.; Park, Y.; Ha, K. H.; Nam, O. H.

    2008-09-01

    InGaN optical confinement layers (OCLs) were introduced into blue-violet AlInGaN-based laser diodes (LDs), resulting in the drastic improvements of lasing performance. Comparing with conventional LD structure, the lowest threshold current density of 2.3kA/cm2 has been achieved by adding 100-nm-thick InGaN OCLs which represented maximum optical confinement factor. Additionally, we observed the high quantum efficiency and the uniform emission intensity distribution of InGaN quantum wells grown on lower InGaN OCL than on typical GaN layer. Upper InGaN OCL can reduce Mg diffusion from p-type layers to InGaN active region by separating the distance between InGaN quantum wells and p-type layers.

  16. Dendrochronology of strain-relaxed islands.

    Science.gov (United States)

    Merdzhanova, T; Kiravittaya, S; Rastelli, A; Stoffel, M; Denker, U; Schmidt, O G

    2006-06-01

    We report on the observation and study of tree-ring structures below dislocated SiGe islands (superdomes) grown on Si(001) substrates. Analogous to the study of tree rings (dendrochronology), these footprints enable us to gain unambiguous information on the growth and evolution of superdomes and their neighboring islands. The temperature dependence of the critical volume for dislocation introduction is measured and related to the composition of the islands. We show clearly that island coalescence is the dominant pathway towards dislocation nucleation at low temperatures, while at higher temperatures anomalous coarsening is effective and leads to the formation of a depletion region around superdomes.

  17. 蓝宝石衬底上AlGaN/GaN HEMT自热效应研究%Study of Self-heating on AlGaN/GaN HEMTs Grown on Sapphire Substrate

    Institute of Scientific and Technical Information of China (English)

    杨燕; 郝跃

    2005-01-01

    建立了包含"自热效应"的AlGaN/GaN HEMT(高电子迁移率晶体管)直流I-V特性解析模型.从理论的角度分析了自热效应对AlGaN/GaN HEMT器件的影响,并同已有的实验结果进行了对比,符合较好.证明基于这种模型的理论分析适于AlGaN/GaN HEMT器件测试及应用的实际情况.

  18. Free-exciton states in crystalline GaTe

    Science.gov (United States)

    Wan, J. Z.; Brebner, J. L.; Leonelli, R.

    1995-12-01

    Polarized properties of both the singlet and triplet ground exciton states in the photoluminescence and transmission spectra of crystalline GaTe are explained based on the possible symmetry properties of the energy band edge of GaTe. Some experimental results about excited exciton states in GaTe are presented and discussed. The energy positions of exciton series in GaTe follow the three-dimensional direct allowed Wannier exciton formula just as in the the other III-VI layered compounds of GaSe and InSe. The nonthermalized, ``hot'' nature of excitons inside GaTe under higher optical excitation intensities is also discussed.

  19. Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Skierbiszewski, C.; Siekacz, M.; Feduniewicz, A.; Pastuszka, B.; Grzegory, I.; Leszczynski, M.; Porowski, S. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); Wasilewski, Z. [Institute for Microstructural Sciences, National Research Council, Ottawa (Canada)

    2004-01-01

    Influence of growth conditions in plasma assisted molecular beam epitaxy on quality of GaN layers and GaN/AlGaN heterojunctions is studied. The growth diagram for step-flow growth mode and different nitrogen flux is presented. The low defect density of bulk GaN substrates together with very low impurity background concentrations resulted in high electron mobility for GaN/AlGaN heterojunctions: 109,000 cm{sup 2}/Vs at 1.5 K, and 2500 cm{sup 2}/Vs at 295 K. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system

    Science.gov (United States)

    Banerjee, Suranjana; Mitra, Monojit

    2015-06-01

    Simulation studies are made on the large-signal RF performance and avalanche noise properties of heterojunction double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on AlxGa1-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, conversion efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.

  1. Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Qingxue [School of Physics, Shandong University, Jinan, 250100 (China); Liu, Rong [Department of Fundamental Theories, Shandong Institute of Physical Education and Sports, Jinan 250063 (China); Xiao, Hongdi, E-mail: hdxiao@sdu.edu.cn [School of Physics, Shandong University, Jinan, 250100 (China); Cao, Dezhong; Liu, Jianqiang; Ma, Jin [School of Physics, Shandong University, Jinan, 250100 (China)

    2016-11-30

    Highlights: • GaN film with a strong phase-separated InGaN/GaN layer was etched by electrochemical etching. • Vertically aligned nanopores in n-GaN films were buried underneath the InGaN/GaN structures. • The relaxation of compressive stress in the MQW structure was found by PL and Raman spectra. - Abstract: A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

  2. Solid waste management on small islands: the case of Green Island, Taiwan

    NARCIS (Netherlands)

    Chen, M.C.; Ruijs, A.J.W.; Wesseler, J.H.H.

    2005-01-01

    Municipalities of small islands have limited capacities for waste disposal. In the case of Green Island, Taiwan, continuing with business as usual would only allow the disposal of waste on the island for another 8 years. Three alternatives for solid waste management (SWM) are compared. The cost-effe

  3. 77 FR 71531 - Special Local Regulation; Kelley's Island Swim, Lake Erie; Kelley's Island, Lakeside, OH

    Science.gov (United States)

    2012-12-03

    ... Regulation; Kelley's Island Swim, Lake Erie; Kelley's Island, Lakeside, OH in the Federal Register (77 FR... Homeland Security FR Federal Register NPRM Notice of Proposed Rulemaking TFR Temporary Final Rule A... SECURITY Coast Guard 33 CFR Part 100 RIN 1625-AA08 Special Local Regulation; Kelley's Island Swim,...

  4. Imagery and Imaginary of Islander Identity: Older People and Migration in Irish Small-Island Communities

    Science.gov (United States)

    Burholt, Vanessa; Scharf, Thomas; Walsh, Kieran

    2013-01-01

    This article examines the imagery and imaginaries of islander identity and makes an original contribution to the fields of gerontology and nissology. Drawing on data collected through in-depth interviews with 19 older residents of two small-island communities located off the island of Ireland, we address the central roles played by older people in…

  5. Some data on the avifauna of the Island of Roti, Lesser Sunda Islands, Indonesia

    NARCIS (Netherlands)

    Verheijen, J.A.J.

    1976-01-01

    INTRODUCTION For several years I had been looking for an opportunity to visit the island of Roti (Rotti, Roté, Loté). Junge (1954) mentions that only once an ornithological collection was made in the island, namely by Dr. H. F. C. ten Kate, an ethnologist who visited the island in 1891. Büttikofer (

  6. Some data on the avifauna of the Island of Roti, Lesser Sunda Islands, Indonesia

    NARCIS (Netherlands)

    Verheijen, J.A.J.

    1976-01-01

    INTRODUCTION For several years I had been looking for an opportunity to visit the island of Roti (Rotti, Roté, Loté). Junge (1954) mentions that only once an ornithological collection was made in the island, namely by Dr. H. F. C. ten Kate, an ethnologist who visited the island in 1891. Büttikofer

  7. Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective-area growth

    Science.gov (United States)

    Oto, Takao; Mizuno, Yutaro; Yanagihara, Ai; Ema, Kazuhiro; Kishino, Katsumi

    2017-04-01

    The effect of the structural properties on the optical characteristics was investigated for In0.3Ga0.7N nanocolumns (NCs) grown on GaN NCs as a function of GaN column diameter, D GaN. With increasing D GaN, the photoluminescence spectra changed from single-peak to double-peak emissions at the diameter D 0 where InGaN axial NCs change to InGaN–InGaN core–shell NCs. For the core–shell NCs, the volume recombination probabilities of the InGaN cores did not change with D GaN. Whereas the surface recombination probability of the InGaN cores exponentially decreased because of the spontaneous formation of InGaN shells for D GaN > D 0, it drastically increased for D GaN ≤ D 0.

  8. High temperature electron transport properties of AlGaN/GaN heterostructures with different Al-contents

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Electron transport properties in AlGaN/GaN heterostructures with different Al-contents have been in-vestigated from room temperature up to 680 K. The temperature dependencies of electron mobility have been systematically measured for the samples. The electron mobility at 680 K were measured as 154 and 182 cm2/V.s for Al0.15Ga0.85N/GaN and Al0.40Ga0.60N/GaN heterostructures,respectively. It was found that the electron mobility of low Al-content Al0.15Ga0.85N/GaN heterostructure was less than that of high Al-content Al0.40Ga0.60N/GaN heterostructure at high temperature of 680 K,which is different from that at room temperature. Detailed analysis showed that electron occupations in the first subband were 75% and 82% at 700 K for Al0.15Ga0.85N/GaN and Al0.40Ga0.60N/GaN heterostructures,respectively,and the two dimensional gas (2DEG) ratios in the whole electron system were 30% and near 60%,respectively. That indicated the 2DEG was better confined in the well,and was still dominant in the whole electron system for higher Al-content AlGaN/GaN heterostructure at 700 K,while lower one was not. Thus it had a higher electron mobility. So a higher Al-content AlGaN/GaN heterostructure is more suitable for high-temperature applications.

  9. In or On? Island Words, Island Worlds: II

    Directory of Open Access Journals (Sweden)

    Ronstrom Owe

    2011-11-01

    Full Text Available The first part of the paper examines uses and meanings of the orientational metaphors ‘in’, ‘on’, ‘out’ and ‘off’. In the discussed languages in North Western Europe there are general principles of metaphoric entailment and underlying image schemas that guide the choice of positional metaphor: islands you are normally ‘on’, and mainlands ‘in’. The second part of the paper examines cases where this use is debated or contested. The author finds that these contestations seem to be fuelled by the different relations between subject and object that positional metaphors entail. Expressions with ‘in’ highlight belonging and collective identity, enlarge objects by conceptualizing them as encompassing containers, and reduce subjects to a part of the object. Expressions with ‘on’ highlight individuality and agency, reduce the object, and enlarge the subject by placing it above the object. Such differing entailments of positional metaphors may influence how islands are positioned and understood.

  10. Vegetation of eastern Unalaska Island, Aleutian Islands, Alaska

    Science.gov (United States)

    Talbot, Stephen S.; Schofield, Wilfred B.; Talbot, Sandra L.; Daniëls, Fred J. A.

    2010-01-01

    Plant communities of Unalaska Island in the eastern Aleutian Islands of western Alaska, and their relationship to environmental variables, were studied using a combined Braun-Blanquet and multivariate approach. Seventy relevés represented the range of structural and compositional variation in the matrix of vegetation and landform zonation. Eleven major community types were distinguished within six physiognomic–ecological groups: I. Dry coastal meadows: Honckenya peploides beach meadow, Leymus mollis dune meadow. II. Mesic meadows: Athyrium filix-femina – Aconitum maximum meadow, Athyrium filix-femina – Calamagrostis nutkaensis meadow, Erigeron peregrinus – Thelypteris quelpaertensis meadow. III. Wet snowbed meadow: Carex nigricans snowbed meadow. IV. Heath: Linnaea borealis – Empetrum nigrum heath, Phyllodoce aleutica heath, Vaccinium uliginosum – Thamnolia vermicularis fellfield. V. Mire: Carex pluriflora – Plantago macrocarpa mire. VI. Deciduous shrub thicket: Salix barclayi – Athyrium filix-femina thicket. These were interpreted as a complex gradient primarily influenced by soil moisture, elevation, and pH. Phytogeographical and syntaxonomical analysis of the plant communities indicated that the dry coastal meadows, most of the heaths, and the mire vegetation belonged, respectively, to the widespread classes Honckenyo–Elymetea, Loiseleurio–Vaccinietea, and Scheuchzerio–Caricetea, characterized by their circumpolar and widespread species. Amphi-Beringian species were likely diagnostic of amphi-Beringian syntaxa, many of these yet to be described.

  11. Impact of roadside ditch dredging on bacterial communities and biological contamination of a tidal creek

    Science.gov (United States)

    Jones, Chance E.; Barkovskii, Andrei L.

    2017-03-01

    Tidal creek networks form the primary hydrologic link between estuaries and land-based activities on barrier islands. A possible impact from the excavation of drainage ditch systems on bacterial communities and biological contamination was studied in the water column and sediments of headwater, mid-stream, and mouth sites of the intertidal Oakdale Creek on Sapelo Island, GA. Community analysis was performed using the MiSeq Illumina platform and revealed that dredging was the cause of a significant rise in Proteobacteria, especially γ-proteobacteria. Targeted biological contaminants included fecal indicator bacteria, Enterococcus spp. (Entero-1), pathogens, Shigella spp. (ipaH), and Salmonella spp (invA), virulence associated genes (VG's) of pathogenic E. coli (eaeA, hlyD, stx1, stx2, and set1B), integrons (intI1, intI2), and tetracycline resistance genes (TRGs). Incidence and gene concentrations of Shigella spp., eaeA and set1B, and of TRGs increased 3-20 folds after the onset of dredging, and followed the dredging schedule. Principal Component Analysis suggested possible common carriers for Shigella spp., some TRGs, and the pathogenic E. coli eaeA gene. At the site of dredging, all of the above contaminants were detected at high concentrations. We concluded that excavation of roadside ditches caused significant changes in bacterial composition and a rise in incidence and concentrations of biological contaminants in the creek. The authors suggest a different approach for the maintenance of this material be explored.

  12. Deep Green And Monolithic White LEDs Based On Combination Of Short-Period InGaN/GaN Superlattice And InGaN QWs

    Science.gov (United States)

    Tsatsulnikov, A. F.; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Chernyakov, A. E.; Zakgeim, A. L.; Cherkashin, N. A.; Hytch, M.

    2011-12-01

    This work presents the results of the investigation of approaches to the synthesis of the active region of LED with extended optical range. Combination of short-period InGaN/GaN superlattice and InGaN quantum well was applied to extend optical range of emission up to 560 nm. Monolithic white LED structures containing two blue and one green QWs separated by the short-period InGaN/GaN superlattice were grown with external quantum efficiency up to 5-6%.

  13. Carbon doping of GaAs NWs

    Science.gov (United States)

    Salehzadeh Einabad, Omid

    Nanowires (NWs) have been proposed and demonstrated as the building blocks for nanoscale electronic and photonic devices such as NW field effect transistors and NW solar cells which rely on doping and trap-free carrier transport. Controlled doping of NWs and a high degree of structure and morphology control are required for device applications. However, doping of III-V nanowires such as GaAs nanowires has not been reported extensively in the literature. Carbon is a well known p-type dopant in planar GaAs due to its low diffusivity and high solubility in bulk GaAs; however its use as an intentional dopant in NW growth has not yet been investigated. In this work we studied the carbon doping of GaAs nanowires using CBr4 as the dopant source. Gold nanoparticles (NP) at the tip ofthe NWs have been used to drive the NW growth. We show that carbon doping suppresses the migration ofthe gold NPs from the tip of the NWs. In addition, we show that the carbon doping of GaAs NWs is accompanied by an increase of the axial growth rate and decrease of the lateral growth rate ofthe NWs. Carbon-doped GaAs NWs, unlike the undoped ones which are highly tapered, are rod-like. The origin of the observed morphological changes is attributed to the carbon adsorbates on the sidewalls ofthe nanowires which suppress the lateral growth of the nanowires and increase the diffusion length of the gallium adatoms on the sidewalls. Stacking fault formation consisting of alternating regIOns of zincblende and wurtzite structures has been commonly observed in NWs grown along the (111) direction. In this work, based on transmission electron microscopy (TEM) analysis, we show that carbon doping ofGaAs NWs eliminates the stacking fault formation. Raman spectroscopy was used to investigate the effects of carbon doping on the vibrational properties of the carbon-doped GaAs nanowires. Carbon doping shows a strong impact on the intrinsic longitudinal and transverse optical (La and TO) modes of the Ga

  14. Magnetic field-dependent of binding energy in GaN/InGaN/GaN spherical QDQW nanoparticles

    Science.gov (United States)

    El Ghazi, Haddou; Jorio, Anouar; Zorkani, Izeddine

    2013-10-01

    Simultaneous study of magnetic field and impurity's position effects on the ground-state shallow-donor binding energy in GaN│InGaN│GaN (core│well│shell) spherical quantum dot-quantum well (SQDQW) as a function of the ratio of the inner and the outer radius is reported. The calculations are investigated within the framework of the effective-mass approximation and an infinite deep potential describing the quantum confinement effect. A Ritz variational approach is used taking into account of the electron-impurity correlation and the magnetic field effect in the trial wave-function. It appears that the binding energy depends strongly on the external magnetic field, the impurity's position and the structure radius. It has been found that: (i) the magnetic field effect is more marked in large layer than in thin layer and (ii) it is more pronounced in the spherical layer center than in its extremities.

  15. MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

    Directory of Open Access Journals (Sweden)

    D. Broxtermann

    2012-03-01

    Full Text Available We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE with electron mobilities up to 21500 cm2V−1s−1 at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

  16. Field-Induced Defect Morphology in Ni-gate AlGaN/GaN High Electron Mobility Transistors

    Science.gov (United States)

    2013-07-10

    mobility transistors. VC 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4813535] AlGaN/ GaN high electron mobility transistors ( HEMTs ) remain...interactions could enhance the reliability of AlGaN/ GaN HEMTs by circumventing the defect formation conditions and preventing device degradation...AlGaN/ GaN HEMTs used for this work were all grown on the same semi-insulating 6H-SiC substrate and received the same processing. An AlN nucleation layer

  17. Reverse Gate Bias-Induced Degradation of AlGaN/GaN High Electron Mobility Transistors

    Science.gov (United States)

    2010-09-23

    contributions from hot electrons and self-heating.13,19,20 In this article, we report on the degradation of AlGaN/ GaN HEMTs under step-stressing of...characteristic of the AlGaN/ GaN HEMTs before and after stress. FIG. 6. !Color online" PL spectra of stressed and unstressed devices. FIG. 7. EL images of stressed...high electric fields present under reverse bias stressing of AlGaN/ GaN HEMTs , the devices exhibit a five order of magnitude increase in gate current

  18. HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

    Science.gov (United States)

    Rohrbaugh, Nathaniel; Hernandez-Balderrama, Luis; Kaess, Felix; Kirste, Ronny; Collazo, Ramon; Ivanisevic, Albena

    2016-06-01

    This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showed a resilience of peptide-AlGaN/GaN bonds in the presence of strong HNO3 aliquots, with significant degradation in FET ID signal. However, devices showed strong and varied response to Hg concentrations of 1, 10, 100, and 1000 ppm. The gathered statistically significant results indicate that peptide terminated AlGaN/GaN devices are capable of differentiating between Hg solutions and demonstrate device sensitivity.

  19. Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Lee-Woon; Jeon, Dae-Woo [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Polyakov, A.Y.; Govorkov, A.V. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Sokolov, V.N. [Department of Engineering and Ecological Geology, Moscow State University, Vorobyovygory, Moscow 119991 (Russian Federation); Smirnov, N.B. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Cho, Han-Su; Yun, Jin-Hyeon [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shcherbatchev, K.D. [National University of Science and Technology MISiS, Leninsky Ave. 4, Moscow 119049 (Russian Federation); Baek, Jong-Hyeob [LED R and D Division, Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-03-15

    Highlights: • Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. • InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. • Overgrown GaN films and LEDs showed lower strain and lower density of surface defects. • The overgrown LED structures showed enhanced electroluminescence efficiency. -- Abstract: Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE–PECE treatment. Overgrowth of LED structures on the ECE–PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.

  20. Defect studies in low-temperature-grown GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.